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Sample records for incidence ion bombardment

  1. The effect of incidence angle on ion bombardment induced surface topography development on single crystal copper

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

    1982-01-01

    The fluence dependence of development of microscopic surface features, particularly etch pits, during 9 keV Ar + ion bombardment of (11,3,1) oriented Cu single crystals has been studied employing quasi-dynamic irradiation and observation techniques in a scanning electron microscope-accelerator system. 9 keV ions are observed not to produce crystallographic pyramids under all irradiation conditions for this surface, a very different result from our earlier studies with higher energy ions. The bombardment does elaborate etch pits however, the habits and growth kinetics of which depend upon both polar and azimuthal angles of ion incidence to the surface. The results are explained in terms of differential erosion of crystal planes modified by the presence of pre-existing and irradiation induces extended defects. (orig.)

  2. Energy dependence of angular distributions of sputtered particles by ion-beam bombardment at normal incidence

    International Nuclear Information System (INIS)

    Matsuda, Yoshinobu; Ueda, Yasutoshi; Uchino, Kiichiro; Muraoka, Katsunori; Maeda, Mitsuo; Akazaki, Masanori; Yamamura, Yasunori.

    1986-01-01

    The angular distributions of sputtered Fe-atoms were measured using the laser fluorescence technique during Ar-ion bombardment for energies of 0.6, 1, 2 and 3 keV at normal incidence. The measured cosine distribution at 0.6 keV progressively deviated to an over-cosine distribution at higher energies, and at 3 keV the angular distribution was an overcosine distribution of about 20 %. The experimental results agree qualitatively with calculations by a recent computer simulation code, ACAT. The results are explained by the competition between surface scattering and the effects of primary knock-on atoms, which tend to make the angular distributions over-cosine and under-cosine, respectively. (author)

  3. Surface roughening under ion bombardment

    International Nuclear Information System (INIS)

    Bhatia, C.S.

    1982-01-01

    Ion bombardment can cause roughening of a surface. Inadequate step coverage and poor adhesion of films on such surfaces are of concern. An extreme case of surface roughening results in cone formation under ion bombardment. The results of the investigation, using scanning electron microscopy, is discussed in terms of the role of (a) embedded particles, (b) impurities and (c) surface migration in cone formation on the target surface. (Auth.)

  4. Ion bombardment modification of surfaces

    International Nuclear Information System (INIS)

    Auciello, O.

    1984-01-01

    An historical overview of the main advances in the understanding of bombardment-induced surface topography is presented. The implantation and sputtering mechanisms which are relevant to ion bombardment modification of surfaces and consequent structural, electronic and compositional changes are described. Descriptions of plasma and ion-beam sputtering-induced film formation, primary ion-beam deposition, dual beam techniques, cluster of molecule ion-beam deposition, and modification of thin film properties by ion bombardment during deposition are presented. A detailed account is given of the analytical and computational modelling of topography from the viewpoint of first erosion theory. Finally, an account of the possible application and/or importance of textured surfaces in technologies and/or experimental techniques not considered in previous chapters is presented. refs.; figs.; tabs

  5. Ion bombardment modification of surfaces

    International Nuclear Information System (INIS)

    Auciello, O.

    1984-01-01

    Ion bombardment-induced modification of surfaces may be considered one of the significant scientific and technological developments of the last two decades. The understanding acquired concerning the underlying mechanisms of several phenomena occurring during ion-surface interactions has led to applications within different modern technologies. These include microelectronics, surface acoustical and optical technologies, solar energy conversion, thin film technology, ion implantation metallurgy, nuclear track technology, thermonuclear fusion, vacuum technology, cold welding technology, biomedicine (implantology). It has become clear that information on many relevant advances, regarding ion bombardment modification of surfaces is dispersed among journals involving fields sometimes not clearly related. This may result, in some cases, in a loss of the type of interdisciplinary exchange of ideas, which has proved to be so fruitful for the advancement of science and technology. This book has been planned in an attempt to collect at least some of today's relevant information about the experimental and theoretical knowledge related to surface modification and its application to technology. (Auth.)

  6. Electron emission from Inconel under ion bombardment

    International Nuclear Information System (INIS)

    Alonso, E.V.; Baragiola, R.A.; Ferron, J.; Oliva-Florio, A.

    1979-01-01

    Electron yields from clean and oxidized Inconel 625 surfaces have been measured for H + ,H 2 + ,He + ,O + and Ar + ions at normal incidence in the energy range 1.5 to 40 keV. These measurements have been made under ultrahigh vacuum and the samples were freed of surface contaminants by bombarding with high doses of either 20 keV H 2 + or 30 keV Ar + ions. Differences in yields of oxidized versus clean surfaces are explained in terms of differences in the probability that electrons internally excited escape upon reaching the surface. (author)

  7. Characterization techniques for ion bombarded insulators

    International Nuclear Information System (INIS)

    Borders, J.A.

    1987-01-01

    The chapter gives a comprehensive review of the experimental methods for the analysis of ion-bombarded insulators including optical and structural methods, resonance, energetic ion methods, and surface techniques. 48 refs.; 34 figs

  8. Cesium ion bombardment of metal surfaces

    International Nuclear Information System (INIS)

    Tompa, G.S.

    1986-01-01

    The steady state cesium coverage due to cesium ion bombardment of molybdenum and tungsten was studied for the incident energy range below 500 eV. When a sample is exposed to a positive ion beam, the work function decreases until steady state is reached with a total dose of less than ≅10 16 ions/cm 2 , for both tungsten and molybdenum. A steady state minimum work function surface is produced at an incident energy of ≅100 eV for molybdenum and at an incident energy of ≅45 eV for tungsten. Increasing the incident energy results in an increase in the work function corresponding to a decrease in the surface coverage of cesium. At incident energies less than that giving the minimum work function, the work function approaches that of cesium metal. At a given bombarding energy the cesium coverage of tungsten is uniformly less than that of molybdenum. Effects of hydrogen gas coadsorption were also examined. Hydrogen coadsorption does not have a large effect on the steady state work functions. The largest shifts in the work function due to the coadsorption of hydrogen occur on the samples when there is no cesium present. A theory describing the steady-state coverage was developed is used to make predictions for other materials. A simple sticking and sputtering relationship, not including implantation, cannot account for the steady state coverage. At low concentrations, cesium coverage of a target is proportional to the ratio of (1 - β)/γ where β is the reflection coefficient and γ is the sputter yield. High coverages are produced on molybdenum due to implantation and low backscattering, because molybdenum is lighter than cesium. For tungsten the high backscattering and low implantation result in low coverages

  9. Heavy-ion induced desorption of a TiZrV coated vacuum chamber bombarded with 5 MeV/u Ar8+ beam at grazing incidence

    International Nuclear Information System (INIS)

    Hedlund, E.; Malyshev, O. B.; Westerberg, L.; Krasnov, A.; Semenov, A. S.; Leandersson, M.; Zajec, B.; Kollmus, H.; Bellachioma, M. C.; Bender, M.; Kraemer, A.; Reich-Sprenger, H.

    2009-01-01

    TiZrV nonevaporable getter (NEG) coated vacuum chambers is a new vacuum technology which is already used in many particle accelerators worldwide. This coating is also of interest for heavy-ion accelerator vacuum chambers. Heavy-ion desorption yields from an activated as well as a CO saturated NEG coated tube have been measured with 5 MeV/u Ar 8+ beam. The sticking probability of the NEG film was obtained by using the partial pressure ratios on two sides of the NEG coated tube. These ratios were compared to results of modeling of the experimental setup with test particle Monte Carlo and angular coefficient methods. The partial pressures inside the saturated NEG coated tube bombarded with heavy ions were up to 20 times larger than those inside the activated one. However, the partial pressure of methane remained the same. The value of the total desorption yield from the activated NEG coated tube is 2600 molecules/ion. The desorption yields after saturation for CH 4 , H 2 , and CO 2 were found to be very close to the yields measured after the activation, while CO increased by up to a factor of 5. The total desorption yield for the saturated tube is up to 7000 molecules/ion. The large value of the desorption yield of the activated NEG coated tube, an order of magnitude higher than the desorption yield from a stainless steel tube at normal incident angle, could be explained by the grazing incident angle

  10. Ion bombardment and disorder in amorphous silicon

    International Nuclear Information System (INIS)

    Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

    1997-01-01

    The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects

  11. Compositional changes during ion bombardment

    International Nuclear Information System (INIS)

    Rehn, L.E.

    1988-09-01

    Ion irradiation initiates several processes that can alter the composition of the target. This presentation provides an overview of our current understanding of these kinetics processes, which include implantation, sputtering, displacement mixing, radiation-enhanced diffusion, and radiation-induced segregation. The latter two effects can alter the target composition to depths that are substantially greater than the projected ion range. 45 refs., 8 figs

  12. Magnetoresistance and ion bombardment induced magnetic patterning

    International Nuclear Information System (INIS)

    Hoeink, V.

    2008-01-01

    In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure the pinned layer in magnetic tunnel junctions (MTJs) with alumina barrier. Furthermore, it has been shown that the side effects which have been observed after this treatment can be at least reduced by an additional heating step. Starting from this point, the applicability of ion bombardment induced magnetic patterning (IBMP) in general and the combination of IBMP and MTJs in particular is investigated and new applications are developed. (orig.)

  13. Ion bombardment techniques - recent developments in SIMS

    International Nuclear Information System (INIS)

    Konarski, P.; Miśnik, M.

    2013-01-01

    We present a short review of cluster ion bombardment technique recently applied in SIMS. Many advantages of using cluster ion beams are specified over monoatomic ion species. Cluster ions open really new perspectives especially in organic based structures analysis. Nevertheless cluster ions are not the perfect solution and still new ideas of ion erosion in SIMS are needed. Another issue discussed is 'storing matter' technique applied for quantitative analysis in SIMS. Simple idea of sputter deposition of eroded material onto rotating substrate and then analysing the stored material allows to avoid strong matrix effects in SIMS. Presented are the results performed in Tele and Radio Research Institute, Warszawa, Poland. These are the first results of ‘storing matter’ technique performed in one analytical chamber of SIMS instrument. (authors)

  14. Impact of Ion Bombardment on the Structure and Magnetic Properties of Fe78Si13B9 Amorphous Alloy

    Science.gov (United States)

    Wu, Yingwei; Peng, Kun

    2018-06-01

    Amorphous Fe78Si13B9 alloy ribbons were bombarded by ion beams with different incident angles ( θ ). The evolution of the microstructure and magnetic properties of ribbons caused by ion beam bombardment was investigated by x-ray diffraction, transmission electron microscope and vibrating sample magnetometer analysis. Low-incident-angle bombardment led to atomic migration in the short range, and high-incident-angle bombardment resulted in the crystallization of amorphous alloys. Ion bombardment induces magnetic anisotropy and affects magnetic properties. The effective magnetic anisotropy was determined by applying the law of approach to saturation, and it increased with the increase of the ion bombardment angle. The introduction of effective magnetic anisotropy will reduce the permeability and increase the relaxation frequency. Excellent high-frequency magnetic properties can be obtained by selecting suitable ion bombardment parameters.

  15. Adhesion of silver films to ion-bombarded alumina

    International Nuclear Information System (INIS)

    Erck, R.A.; Fenske, G.R.

    1990-01-01

    This paper reports on silver films deposited on alumina substrates using ion bombardment. Adhesion strength was measured as a function of deposition conditions, sputter-cleaning time, and bombarding ion species, using a pull-type adhesion tester. Argon- and argon/oxygen-ion sputtering produced large increases in adhesion strength, with the greatest increases occurring for oxygen-ion bombardment. Adhesion strength increased monotonically as a function of ion sputtering time. At a given deposition rate, further enhancement of adhesion is seen with concurrent ion bombardment

  16. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. Examples of thin film property modification by ion bombardment during deposition, including effects which are primarily compositional as well as those which are primarily structural are presented. The examples demonstrate the usefulness of ion beam techniques in identifying and controlling the fundamental deposition parameters. 68 refs.; 15 figs.; 1 table

  17. Development of pits and cones on ion bombarded copper

    International Nuclear Information System (INIS)

    Tanovic, L.A.; Carter, G.; Nobes, M.J.; Whitton, I.L.; Williams, J.S.

    1980-01-01

    The formation of pits and cones on Ar ion bombarded copper has been studied. Carefully polished surfaces of large grained 99.999% pure copper crystals have been bombarded at normal incidence with 40 keV argon ions. The cone formation has been investigated for annealed and non-annealed crystals at room temperature and at 30 K and in the case of monocrystal and polycrystal samples. Although in the most other studies the presence of impurities is as a necessary condition for generation of cones and pits the obtained experimental results show that under certain conditions these features are formed on clean surfaces. It is shown that the dominant parameter in the production of cones on copper is the crystal orientation [ru

  18. Experiments on secondary ion emission with multicharged keV ion bombardement

    International Nuclear Information System (INIS)

    Della Negra, S.; Depauw, J.; Joret, H.; Le Beyec, Y.; Schweikert, E.A.

    1987-01-01

    An electron cyclotron resonance ion source was used to study the influence of the incident charge state of keV ions on secondary ion emission. The experiments were run with 18 keV Arn+ (1 < n < 11) beams produced by a minimafios source. Various types of targets were bombarded by the ion beam and the sputtered ionized species were identified by time of flight mass spectrometry. The experimental arrangement is detailed and preliminary results are indicated

  19. Modification of thin film properties by ion bombardment during deposition

    International Nuclear Information System (INIS)

    Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

    1984-01-01

    Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

  20. Cleaning of diffusion bonding surface by argon ion bombardment treatment

    International Nuclear Information System (INIS)

    Wang, Airu; Ohashi, Osamu; Yamaguchi, Norio; Aoki, Masanori; Higashi, Yasuo; Hitomi, Nobuteru

    2003-01-01

    The specimens of oxygen-free high conductivity copper, SUS304L stainless steel and pure iron were treated by argon ion bombardment and then were bonded by diffusion bonding method. The effects of argon ion bombardment treatment on faying surface morphology, tensile strength of bonding joints and inclusions at the fracture surface were investigated. The results showed that argon ion bombardment treatment was effective to remove the oxide film and contamination at the faying surface and improve the quality of joints. The tensile strength of the bonded joints was improved, and minimum bonding temperature to make the metallic bonding at the interface was lowered by argon ion bombardment treatment. At the joints with argon ion bombardment treatment, ductile fractured surface was seen and the amount of inclusions was obviously decreased

  1. Modification of Polymer Materials by Ion Bombardment: Case Studies

    International Nuclear Information System (INIS)

    Bielinski, D. M.; Jagielski, J.; Lipinski, P.; Pieczynska, D.; Ostaszewska, U.; Piatkowska, A.

    2009-01-01

    The paper discusses possibility of application of ion beam bombardment for modification of polymers. Changes to composition, structure and morphology of the surface layer produced by the treatment and their influence on engineering and functional properties of wide range of polymer materials are presented. Special attention has been devoted to modification of tribological properties. Ion bombardment results in significant reduction of friction, which can be explained by increase of hardness and wettability of polymer materials. Hard but thin enough skin does not result in cracking but improves their abrasion resistance. Contrary to conventional chemical treatment ion beam bombardment works even for polymers hardly susceptible to modification like silicone rubber or polyolefines.

  2. Evolution of atomic-scale surface structures during ion bombardment: A fractal simulation

    International Nuclear Information System (INIS)

    Shaheen, M.A.; Ruzic, D.N.

    1993-01-01

    Surfaces of interest in microelectronics have been shown to exhibit fractal topographies on the atomic scale. A model utilizing self-similar fractals to simulate surface roughness has been added to the ion bombardment code TRIM. The model has successfully predicted experimental sputtering yields of low energy (less then 1000 eV) Ar on Si and D on C using experimentally determined fractal dimensions. Under ion bombardment the fractal surface structures evolve as the atoms in the collision cascade are displaced or sputtered. These atoms have been tracked and the evolution of the surface in steps of one monolayer of flux has been determined. The Ar--Si system has been studied for incidence energies of 100 and 500 eV, and incidence angles of 0 degree, 30 degree, and 60 degree. As expected, normally incident ion bombardment tends to reduce the roughness of the surface, whereas large angle ion bombardment increases the degree of surface roughness. Of particular interest though, the surfaces are still locally self-similar fractals after ion bombardment and a steady state fractal dimension is reached, except at large angles of incidence

  3. Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment.

    Science.gov (United States)

    Tilakaratne, Buddhi P; Chen, Quark Y; Chu, Wei-Kan

    2017-09-08

    In this study, we used a 30 keV argon cluster ion beam bombardment to investigate the dynamic processes during nano-ripple formation on gold surfaces. Atomic force microscope analysis shows that the gold surface has maximum roughness at an incident angle of 60° from the surface normal; moreover, at this angle, and for an applied fluence of 3 × 10 16 clusters/cm², the aspect ratio of the nano-ripple pattern is in the range of ~50%. Rutherford backscattering spectrometry analysis reveals a formation of a surface gradient due to prolonged gas cluster ion bombardment, although the surface roughness remains consistent throughout the bombarded surface area. As a result, significant mass redistribution is triggered by gas cluster ion beam bombardment at room temperature. Where mass redistribution is responsible for nano-ripple formation, the surface erosion process refines the formed nano-ripple structures.

  4. Computer simulation of the topography evolution on ion bombarded surfaces

    CERN Document Server

    Zier, M

    2003-01-01

    The development of roughness on ion bombarded surfaces (facets, ripples) on single crystalline and amorphous homogeneous solids plays an important role for example in depth profiling techniques. To verify a faceting mechanism based not only on sputtering by directly impinging ions but also on the contribution of reflected ions and the redeposition of sputtered material a computer simulation has been carried out. The surface in this model is treated as a two-dimensional line segment profile. The model describes the topography evolution on ion bombarded surfaces including the growth mechanism of a facetted surface, using only the interplay of reflected and primary ions and redeposited atoms.

  5. The surface topography of Inconel, stainless steel and copper after argon ion bombardment

    International Nuclear Information System (INIS)

    Vogelbruch, K.; Vietzke, E.

    1983-01-01

    Energetic particle bombardment of metals is known to change the surface topography. To simulate the behaviour of the first wall of a fusion device under real plasma conditions, we have investigated the surface topography of rotating targets after 30 keV argon ion bombardment at 70deg incident angle by electron scanning micrographs. Under these conditions Inconel 600, 601, 625, stainless steel, and copper showed no cones, pyramids or cliffs, but only etching figures and at higher ion doses relatively flat hills. Thus, it can be concluded, that the influence of energetic particles on the first wall of a fusion reactor is smaller than expected from the results of such sputtering experiments, which have dealt with the formation of surface structures under ion bombardment at constant incident direction. (author)

  6. Adhesion of evaporated titanium films to ion-bombarded polyethylene

    International Nuclear Information System (INIS)

    Bodoe, P.; Sundgren, J.

    1986-01-01

    Ti films were deposited onto high-density polyethylene (HDPE) samples by electron-beam evaporation. Prior to film deposition the samples were in situ pretreated by Ar ion bombardment using a sputter ion gun. The adhesion of the films, determined as the pull strength required for film failure, was measured as a function of ion dose. HDPE substrates processed at two different temperatures were examined. The adhesion of the Ti films to HDPE samples processed at roughly-equal150 0 C increased with the ion dose to a steady-state value corresponding to the cohesive strength of the HDPE substrate. The adhesion to the samples processed at roughly-equal200 0 C increased to a maximum and then decreased for further ion bombardment to a level of the same order as that for films deposited onto as-prepared samples. The effects of the ion bombardment upon the HDPE surface chemistry were examined by means of x-ray photoelectron spectroscopy (XPS). The ion bombardment resulted in dehydrogenation and cross linking of the surface region and for prolonged ion bombardment, a graphitelike surface was obtained. The film/substrate interface as well as the initial Ti film growth were examined by XPS analysis. A chemical interaction which resulted in Ti--C bonds was observed at the interface. The Ti film growth followed a pronounced three-dimensional growth mode on as-prepared surfaces whereas the ion bombardment resulted in a change toward a more two-dimensional growth mode. The difference in adhesion behavior for the two types of HDPE substrates was found to be due to a difference in the amounts of low molecular weight products present within the substrates

  7. Anomalous microstructural changes in III-nitrides under ion bombardment

    International Nuclear Information System (INIS)

    Kucheyev, S.O.; Williams, J.S.; Jagadish, C.

    2002-01-01

    Full text: Group-III nitrides (GaN, AlGaN, and InGaN) are currently a 'hot topic' in the physics and material research community due to very important technological applications of these materials in (opto)electronics. In the fabrication of III-nitride-based devices, ion bombardment represents a very attractive processing tool. However, ion-beam-produced lattice disorder and its undesirable consequences limit technological applications of ion implantation. Hence, studies of ion-beam-damage processes in Ill-nitrides are not only physically interesting but also technologically important. In this study, wurtzite GaN, AlGaN, and InGaN films exposed to ion bombardment under a wide range of irradiation conditions are studied by a combination of transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), energy dispersive x-ray spectrometry (EDS), atomic force microscopy (AFM), cathodoluminescence (CL), and Rutherford backscattering/channeling (RBS/C) spectrometry. Results show that, unlike the situation for mature semiconductors such as Si and GaAs, Ill-nitrides exhibit a range of intriguing behavior involving extreme microstructural changes under ion bombardment. In this presentation, the following aspects are discussed: (i) formation of lattice defects during ion bombardment, (ii) ion-beam-induced phase transformations, (iii) ion-beam-produced stoichiometric imbalance and associated material decomposition, and (iv) an application of charging phenomena during ESEM imaging for studies of electrical isolation in GaN by MeV light ion irradiation. Emphasis is given to the (powerful) application of electron microscopy techniques for the understanding of physical processes occurring in Ill-nitrides under ion bombardment. Copyright (2002) Australian Society for Electron Microscopy Inc

  8. Catalytic oxidation of silicon by cesium ion bombardment

    International Nuclear Information System (INIS)

    Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

    1991-01-01

    Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

  9. Ion bombardment induced ripple topography on amorphous solids

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Paton, F.; Williams, J.S.

    1977-01-01

    Earlier studies of the ion bombardment induced ripple morphology on the surfaces of amorphous solids when compared with geomorphological effects are shown to possess many similar features. The present study, with 40 keV Ar + ion bombarded Si suggests that analogies are incomplete, however, and that greater similarities with the process of macroscopic sandblasting (corrosion) exist. It is shown that the genesis of wave like structures on Si is from isolated features, which have the appearance of ripple trains, which are faceted. It is suggested that these features result from particle flux enhancement processes near surface dimples generated by stress induced surface lifting. (author)

  10. Angular dependence of secondary ion emission from silicon bombarded with inert gas ions

    International Nuclear Information System (INIS)

    Wittmaack, K.

    1984-01-01

    The emission of positive and negative, atomic and molecular secondary ions sputtered from silicon has been studied under ultrahigh vacuum conditions. The sample was bombarded with 2-12 keV Ar + and Xe + ions at angles of incidence between 0 0 and 60 0 to the surface normal. The angular dependence of the secondary ion intensity as well as the energy spectra of Si + and Si - were found to differ significantly. The effect is attributed mostly do differences in the rate of neutralization. The stability of molecular ions appears to be independent of the charge state. Supporting evidence is provided for the idea that multiply charged secondary ions are due to Auger de-excitation of sputtered atoms in vacuum. (orig.)

  11. Electron emission from molybdenum under ion bombardment

    International Nuclear Information System (INIS)

    Ferron, J.; Alonso, E.V.; Baragiola, R.A.; Oliva-Florio, A.

    1981-01-01

    Measurements are reported of electron emission yields of clean molybdenum surfaces under bombardment with H + , H 2 + , D + , D 2 + , He + , N + , N 2 + , O + , O 2 + , Ne + , Ar + , Kr + and Xe + in the wide energy range 0.7-60.2 keV. The clean surfaces were produced by inert gas sputtering under ultrahigh vacuum. The results are compared with those predicted by a core-level excitation model. The disagreement found when using correct values for the energy levels of Mo is traced to wrong assumptions in the model. A substantially improved agreement with experiment is obtained using a model in which electron emission results from the excitation of valence electrons from the target by the projectiles and fast recoiling target atoms. (author)

  12. Excited-atom production by electron and ion bombardment of alkali halides

    International Nuclear Information System (INIS)

    Walkup, R.E.; Avouris, P.; Ghosh, A.P.

    1987-01-01

    We present experimental results on the production of excited atoms by electron and ion bombardment of alkali halides. For the case of electron bombardment, Doppler shift measurements show that the electronically excited atoms have a thermal velocity distribution in equilibrium with the surface temperature. Measurements of the absolute yield of excited atoms, the distribution of population among the excited states, and the systematic dependence on incident electron current and sample temperature support a model in which the excited atoms are produced by gas-phase collisions between desorbed ground-state atoms and secondary electrons. In contrast, for the case of ion bombardment, the excited atoms are directly sputtered from the surface, with velocity distributions characteristic of a collision cascade, and with typical energies of --10 eV

  13. Ion bombardment effect on surface state of metal

    International Nuclear Information System (INIS)

    Vaulin, E.P.; Georgieva, N.E.; Martynenko, T.P.

    1990-01-01

    The effect of slow argon ion bombardment on the surface microstructure of polycrystalline copper as well as the effect of surface state on sputtering of D-16 polycrystalline alloy are experimentally studied. Reduction of copper surface roughness is observed. It is shown that the D-16 alloy sputtering coefficient is sensitive to the surface state within the limits of the destructed surface layer

  14. Ion bombardment simulation: a review related to fusion radiation damage

    International Nuclear Information System (INIS)

    Brimhall, J.L.

    1975-01-01

    Prime emphasis is given to reviewing the ion bombardment data on the refractory metals molybdenum, niobium and vanadium which have been proposed for use in advanced fusion devices. The temperature and dose dependence of the void parameters are correlated among these metals. The effect of helium and hydrogen gas on the void parameters is also included. The similarities and differences of the response of these materials to high dose, high temperature radiation damage are evaluated. Comparisons are made with results obtained from stainless steel and nickel base alloys. The ion bombardment data is then compared and correlated, as far as possible, with existing neutron data on the refractory metals. The theoretically calculated damage state produced by neutrons and ions is also briefly discussed and compared to experimental data wherever possible. The advantages and limitations of ion simulation in relation to fusion radiation damage are finally summarized

  15. Investigation of the surface morphology of ion-bombarded biocompatible materials with a SEM and profilograph

    International Nuclear Information System (INIS)

    Kowalski, Z.W.

    1984-01-01

    The surface morphology (topography and roughness) is a very important factor which affects the response of biological tissue to an implant material. The effect of an incident ion beam on surface morphology of various biocompatible materials was studied. All materials were bombarded by Ar + ions at an applied voltage of 7 kV at various incident angles from 0 to 1.4 rad (0 to 80 deg) and at a beam current up to 0.1 mA. The surface topographies of ion-bombarded samples were examined with a Japan Electron Optics Laboratory, model JSM-35, scanning electron microscope. The roughness of the surface was calculated from the shape of a surface profile, which was recorded by a profilograph, the ME 10 (supplied by VEB Carl Zeiss, Jena). (author)

  16. Destruction of C60 films by boron ion bombardment

    International Nuclear Information System (INIS)

    Ren Zhongmin; Du Yuancheng; Ying Zhifeng; Xiong Xiaxing; Li Fuming

    1995-01-01

    C 60 films are bombarded by 100 keV boron ion beams at doses ranging from 3x10 14 to 1x10 16 /cm 2 . The bombarded films are analyzed using Fourier transform infrared spectroscopy (FTIR), Raman spectra and X-ray diffraction (XRD) measurements. Most C 60 soccer-balls in the implanted region in the films are found to be broken at a dose over 1x10 15 /cm 2 , while at a dose less than 6x10 14 /cm 2 a few C 60 molecules remain undestroyed and maintain some crystal structure. The results of the analyses suggest a complete disintegration of a C 60 molecule under B + bombardment. ((orig.))

  17. Auger emission from solid surfaces bombarded with ions

    International Nuclear Information System (INIS)

    Grizzi, Oscar.

    1986-01-01

    The Auger electron emission from Be, Na, Mg, Al and Si bombarded with 0,5-20 KeV noble gas ions is studied. Sharp structures of the Auger electron spectra of Na and Be were identified. A Monte Carlo program was adapted to simulate the colision cascade in the solid, inner shell excitations and Auger decays. From the comparision of experimental and simulated Auger intensities, the relative role of symmetric and asymmetric collisions in Be K- and Al L-shell excitation were evaluated. In the case of Be, the discussion of the exciting processes to higher projectile energies was extended. To this end, the simulation to early measurements of Be K X-ray yields was applied. From this analysis, information about the variations of the fluorescence yield and outer-shell occupation numbers of Be with projectile energy was obtained. The study of the shape of the sharp Auger structures and their dependence with the energy and incidence projectile angle gives information about the collisional processes, inner hole lifetimes and Auger decays. From the evaluation of the energy and angular distribution of the excited sputtered atoms and the interaction between them and the metallic-surface, the energy shift distributions in the Auger energies were obtained. From the comparison of these distributions with the experimental atomic peaks, the main causes of the broadening of these peaks were determined. (M.E.L.) [es

  18. Calculations on displacement damage and its related parameters for heavy ion bombardment in reactor materials

    International Nuclear Information System (INIS)

    Sone, Kazuho; Shiraishi, Kensuke

    1975-04-01

    The depth distribution of displacement damage expressed in displacements per atom (DPA) in reactor materials such as Mo, Nb, V, Fe and Ni bombarded by energetic nitrogen, argon and self ions with incident energy below 2 MeV was calculated following the theory developed by Lindhard and co-workers for the partition of energy as an energetic ion slowing down. In this calculation, energy loss due to electron excitation was taken into account for the atomic collision cascade after the primary knock-on process. Some parameters indispensable for the calculation such as energy loss rate, damage efficiency, projected range and its straggling were tabulated as a function of incident ion energy of 20 keV to 2 MeV. The damage and parameters were also calculated for 2 MeV nickel ions bombarding Fe targets. In this case, the DPA value is of 40--75% overestimated in a calculation disregarding electronic energy loss for primary knock-on atoms. The formula proposed in this report is significant for calculations on displacement damage produced by heavy ion bombardment as a simulation of high fluence fast neutron damage. (auth.)

  19. Calculations on displacement damage and its related parameters for heavy ion bombardment in reactor materials

    Energy Technology Data Exchange (ETDEWEB)

    Sone, K; Shiraishi, K

    1975-04-01

    The depth distribution of displacement damage expressed in displacements per atom (DPA) in reactor materials such as Mo, Nb, V, Fe and Ni bombarded by energetic nitrogen, argon and self ions with incident energy below 2 MeV was calculated following the theory developed by Lindhard and co-workers for the partition of energy as an energetic ion slowing down. In this calculation, energy loss due to electron excitation was taken into account for the atomic collision cascade after the primary knock-on process. Some parameters indispensable for the calculation such as energy loss rate, damage efficiency, projected range and its straggling were tabulated as a function of incident ion energy of 20 keV to 2 MeV. The damage and parameters were also calculated for 2 MeV nickel ions bombarding Fe targets. In this case, the DPA value is of 40--75% overestimated in a calculation disregarding electronic energy loss for primary knock-on atoms. The formula proposed in this report is significant for calculations on displacement damage produced by heavy ion bombardment as a simulation of high fluence fast neutron damage.

  20. Thermo-mechanical design aspects of mercury bombardment ion thrusters.

    Science.gov (United States)

    Schnelker, D. E.; Kami, S.

    1972-01-01

    The mechanical design criteria are presented as background considerations for solving problems associated with the thermomechanical design of mercury ion bombardment thrusters. Various analytical procedures are used to aid in the development of thruster subassemblies and components in the fields of heat transfer, vibration, and stress analysis. Examples of these techniques which provide computer solutions to predict and control stress levels encountered during launch and operation of thruster systems are discussed. Computer models of specific examples are presented.

  1. Study of ion-bombardment-induced surface topography of silver by stereophotogrammetric method

    International Nuclear Information System (INIS)

    Fayazov, I.M.; Sokolov, V.N.

    1992-01-01

    The ion-bombardment-induced surface topography of polycrystalline silver was studied using the stereophotogrammetric method. The samples were irradiated with 30keV argon ions at fairly high fluences (> 10 17 ions/cm 2 ). The influence of the inclination angle of the sample in the SEM on the cone shape of a SEM-picture is discussed. To analyse the irradiated surfaces covered with cones, the SEM-stereotechnique is proposed. The measurements of the sample section perpendicular to the incidence plane are also carried out. (author)

  2. Emission of positive oxygen ions from ion bombardment of adsorbate-covered metal surfaces

    International Nuclear Information System (INIS)

    Kaurin, M.G.

    1989-01-01

    During ion bombardment of metal surfaces, collision cascades can result in the emission of sputtered secondary ions. Recent experiments, however, have suggested that the emission of positive ions of electronegative adsorbates can result from electronic processes rather than from processes involving elastic collisions. This dissertation presents the results of experiments studying the emission of positive oxygen ions from oxygen- and carbon-monoxide-covered transition metal surfaces during bombardment by 25-250 keV ions of neon, argon, and krypton. The systems studied may be grouped into four categories. For a nickel substrate with adsorbed oxygen, the emission of positive oxygen ions proceeds through collision cascades. For titanium and niobium with adsorbed oxygen, the emission of positive oxygen ions is proportional to the primary ion velocity, consistent with emission from electronic processes; for a given primary ion velocity, the oxygen ion yield is independent of primary ion species. For substrates of molybdenum and tungsten, the oxygen yield is proportional to primary ion velocity, but the yield also depends on the primary ion species for a given primary ion velocity in a manner that is consistent with emission resulting from electronic processes. For these two groups, except for titanium, the yields during neon ion bombardment do not extrapolate (assuming linearity with primary ion velocity) to a nonzero value at zero beam velocity. The magnitude of the oxygen ion yields from these targets is not consistent with that expected if the emission were induced by secondary electrons emitted during the ion bombardment

  3. Direct evidence for a thermal effect of Ar+ ion bombardment in a conventional sputtering mode

    International Nuclear Information System (INIS)

    Okuyama, F.; Fujimoto, Y.

    1986-01-01

    Evidence is presented that the Ar + ion bombardment for sputtering in Auger electron spectroscopy can heat the target up to 2000 0 C if the target has poor heat conduction. Polycrystalline microneedles of Cr exhibited spherical tips after being exposed to 3 keV Ar + ions, proving that the needle tips were melted by impacting Ar + ions. Microneedles of Mo ion bombarded under the same condition were bent plastically, which perhaps reflects the thermal annealing of the needles during ion bombardment

  4. Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-05-01

    Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

  5. Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

    International Nuclear Information System (INIS)

    Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

    2014-01-01

    Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

  6. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    Energy Technology Data Exchange (ETDEWEB)

    Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

  7. An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

    International Nuclear Information System (INIS)

    Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

    2013-01-01

    Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

  8. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

    International Nuclear Information System (INIS)

    Williams, R.S.

    1982-01-01

    Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

  9. Model to estimate fractal dimension for ion-bombarded materials

    Energy Technology Data Exchange (ETDEWEB)

    Hu, A., E-mail: hu77@purdue.edu; Hassanein, A.

    2014-03-15

    Comprehensive fractal Monte Carlo model ITMC-F (Hu and Hassanein, 2012 [1]) is developed based on the Monte Carlo ion bombardment simulation code, i.e., Ion Transport in Materials and Compounds (ITMC) code (Hassanein, 1985 [2]). The ITMC-F studies the impact of surface roughness on the angular dependence of sputtering yield. Instead of assuming material surfaces to be flat or composed of exact self-similar fractals in simulation, we developed a new method to describe the surface shapes. Random fractal surfaces which are generated by midpoint displacement algorithm and support vector machine algorithm are combined with ITMC. With this new fractal version of ITMC-F, we successfully simulated the angular dependence of sputtering yield for various ion-target combinations, with the input surface roughness exponent directly depicted from experimental data (Hu and Hassanein, 2012 [1]). The ITMC-F code showed good agreement with the experimental data. In advanced, we compare other experimental sputtering yield with the results from ITMC-F to estimate the surface roughness exponent for ion-bombarded material in this research.

  10. Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

    Energy Technology Data Exchange (ETDEWEB)

    Semsang, Nuananong, E-mail: nsemsang@gmail.com [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, LiangDeng [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► Ion beam bombarded rice seeds in vacuum. ► Studied seed survival from the ion bombardment. ► Determined various antioxidant enzyme activities and lipid peroxidation level. ► Discussed vacuum, ion species and ion energy effects. ► Attributed the changes to free radical formation due to ion bombardment. -- Abstract: Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29–60 keV and ion fluences of 1 × 10{sup 16} ions cm{sup −2}. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

  11. Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

    Science.gov (United States)

    Semsang, Nuananong; Yu, LiangDeng

    2013-07-01

    Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29-60 keV and ion fluences of 1 × 1016 ions cm-2. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

  12. Continuum radiation emitted from transition metals under ion bombardment

    International Nuclear Information System (INIS)

    El Boujlaidi, A.; Kaddouri, A.; Ait El Fqih, M.; Hammoum, K.; Aouchiche, H.

    2012-01-01

    Optical emission of transition metals has been studied during 5 keV Kr + ions bombardment within and without oxygen atmosphere in the colliding chamber. The observed spectra consist of a series of discrete lines superimposed on a broad continuum. Generally, the emission intensity was influenced by the presence of oxygen giving rise to transient effects as well as to an increase in the line intensity. The behaviours of spectral lines were successfully explained in term of electron-transfer process between the excited sputtered atom and the solid surface. In this work, we have focused our study on the continuous radiation emitted during ion bombardment. The experimental results suggest that the continuum emission depends on the nature of metal and very probably related to its electronic structure. The collective deactivation of 3d-shell electrons appears to play a role in the emission of this radiation. The observed enhancement in the presence of oxygen is probably due to a significant contribution of the oxide molecules. (authors)

  13. Facies of ion bombarded surfaces of brittle materials

    International Nuclear Information System (INIS)

    Primak, W.

    1975-12-01

    Materials were bombarded by protons, deuterons, and helium ions. The materials investigated were quartz; glasses; carbides and borides (SiC, B 4 C, TiB 2 ); oxides and nitrides (magnorite, sapphire, spinel, Al 2 O 3 , Si 3 N 4 , ZrO 2 , BaTiO 3 ); and miscellaneous (graphite, LiNbO 3 , copper). Oberservations were of growth, reflectivity, blistering, surface ablation, and swelling. Calculations were made of the effects of a layer, of its gradual transformation, and of the introduction of a gas. It is concluded that: Radiation blistering is not a primary process. Observations of blister formation and exfoliation cannot be used to calculate the surface ablation rate. The primary process is the development of a microporous layer which causes swelling. Visible blisters are caused by fracturing by transverse stresses in this layer and may occur during the bombardment, or in some cases, much later, in storage. There is no evidence of extreme gas pressures in the blisters. When blisters develop, they may be stable under continued bombardment for a dose many times that at which they formed. The swelling is a better index of the effects than is the blistering, and must be associated in most cases with permeability to the gas. Behavior with protons and deuterons is similar, with helium different. All but quartz, vitreous silica, and Pyrex are impervious to hydrogen and deuterium; only dense barium crown glass, carbides, borides, oxides, and nitrides are impervious to helium. Quartz shows swelling caused by conversion to a vitreous product of much lower density but no porosity, while for the others, most of the swelling and surface growth is caused by porosity. Surface ablation by the blistering process may be reduced by initial porosity or by initial or subsequent surface fissuring. However, for impervious materials, surface damage by the introduction of porosity would continue

  14. Large area smoothing of surfaces by ion bombardment: fundamentals and applications

    International Nuclear Information System (INIS)

    Frost, F; Fechner, R; Ziberi, B; Voellner, J; Flamm, D; Schindler, A

    2009-01-01

    Ion beam erosion can be used as a process for achieving surface smoothing at microscopic length scales and for the preparation of ultrasmooth surfaces, as an alternative to nanostructuring of various surfaces via self-organization. This requires that in the evolution of the surface topography different relaxation mechanisms dominate over the roughening, and smoothing of initially rough surfaces can occur. This contribution focuses on the basic mechanisms as well as potential applications of surface smoothing using low energy ion beams. In the first part, the fundamentals for the smoothing of III/V semiconductors, Si and quartz glass surfaces using low energy ion beams (ion energy: ≤2000 eV) are reviewed using examples. The topography evolution of these surfaces with respect to different process parameters (ion energy, ion incidence angle, erosion time, sample rotation) has been investigated. On the basis of the time evolution of different roughness parameters, the relevant surface relaxation mechanisms responsible for surface smoothing are discussed. In this context, physical constraints as regards the effectiveness of surface smoothing by direct ion bombardment will also be addressed and furthermore ion beam assisted smoothing techniques are introduced. In the second application-orientated part, recent technological developments related to ion beam assisted smoothing of optically relevant surfaces are summarized. It will be demonstrated that smoothing by direct ion bombardment in combination with the use of sacrificial smoothing layers and the utilization of appropriate broad beam ion sources enables the polishing of various technologically important surfaces down to 0.1 nm root mean square roughness level, showing great promise for large area surface processing. Specific examples are given for ion beam smoothing of different optical surfaces, especially for substrates used for advanced optical applications (e.g., in x-ray optics and components for extreme

  15. Chemical changes in titanate surfaces induced by Ar+ ion bombardment

    International Nuclear Information System (INIS)

    Gonzalez-Elipe, A.R.; Fernandez, A.; Espinos, J.P.; Munuera, G.; Sanz, J.M.

    1992-01-01

    The reduction effects and compositional changes induced by 3.5 keV Ar + bombardment of several titanates (i.e. SrTiO 3 , Al 2 TiO 5 and NiTiO 3 ) have been quantitatively investigated by XPS. In all the samples studied here the original Ti 4+ species were reduced to lower oxidation states (i.e. Ti 3+ and Ti 2+ ), although to a lesser extent than in pure TiO 2 . On the contrary, whereas Sr 2+ and Al 3+ seem to remain unaffected by Ar + bombardment, in agreement with the behaviour of the respective oxides (i.e. SrO and Al 2 O 3 ), Ni 2+ appears more easily reducible to Ni o in NiTiO 3 than in NiO. In addition, other specific differences were observed between the titanates, which reveal the existence of interesting chemical effects related to the presence of the different counter-ions in the titanates. In the case of Al 2 TiO 5 , its Ar + -induced decomposition to form TiO 2 + Al 2 O 3 could be followed by XPS. (Author)

  16. Topography development on selected inert gas and self-ion bombarded Si

    International Nuclear Information System (INIS)

    Vishnyakov, V.; Carter, G.; Goddard, D.T.; Nobes, M.J.

    1995-01-01

    An AFM and SEM study of the topography induced by 20 keV Si + , Ar + and Xe + ion bombardment of Si at 45 o incidence angles and for ion fluences between 10 17 and 10 20 cm -2 has been undertaken at room temperature. All species generate an atomic scale random roughness, the magnitude of which does not increase extensively with ion fluence, suggesting the operation of a local relaxation process. This nanometre scale roughness forms, for Ar and Xe, a background for coarser micrometre scale structures such as pits, chevrons and waves. Apart from isolated etch pits Si + irradiation generates no repetitive micrometre scale structures. Xe + irradiation produces well developed transverse waves while Ar + irradiation results in isolated chevron-like etch pit trains and ripple patches. This latter pattern evolves, with increasing ion fluence, to a corrugated facet structure. The reasons for the different behaviours are still not fully clarified. (author)

  17. Ion bombardment effects on surface states in selected oxide systems: rutile and alkaline earth titanates

    International Nuclear Information System (INIS)

    Gruen, D.M.

    1978-01-01

    In this paper, the nature of the surface states of n-type TiO 2 and SrTiO 3 is discussed and the role of ion bombardment in modifying the properties of these states is elucidated. Insofar as possible, the interrelationships between oxide nonstoichiometry, surface states, ion bombardment effects and photoelectrolysis are explored

  18. Annealing of defects in indium antimonide after ion bombardment

    International Nuclear Information System (INIS)

    Bogatyrev, V.A.; Kachurin, G.A.

    1977-01-01

    Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

  19. Particle-In-Cell/Monte Carlo Simulation of Ion Back Bombardment in Photoinjectors

    International Nuclear Information System (INIS)

    Qiang, Ji; Corlett, John; Staples, John

    2009-01-01

    In this paper, we report on studies of ion back bombardment in high average current dc and rf photoinjectors using a particle-in-cell/Monte Carlo method. Using H 2 ion as an example, we observed that the ion density and energy deposition on the photocathode in rf guns are order of magnitude lower than that in a dc gun. A higher rf frequency helps mitigate the ion back bombardment of the cathode in rf guns

  20. Direct and Recoil-Induced Electron Emission from Ion-Bombarded Solids

    DEFF Research Database (Denmark)

    Holmen, G.; Svensson, B.; Schou, Jørgen

    1979-01-01

    The kinetic emission of secondary electrons from ion-bombarded solid surfaces is split into two contributions, a direct one caused by ionizing collisions between the bombarding ion and target atoms, and an indirect one originating from ionizing collisions undergone by recoil atoms with other target...... atoms. The direct contribution, which has been treated by several authors in previous studies, shows a behavior that is determined primarily by the electronic stopping power of the bombarding ion, while the indirect contribution is nonproportionally related to the nuclear stopping power. This latter...

  1. Preliminary report into the effects of nitrogen ion bombardment treatment on mustard seeds

    International Nuclear Information System (INIS)

    Smith, C.W.; Al-Hashmi, S.A.R.; Ahmed, N.A.G.; Pollard, M.

    1988-01-01

    Mustard seeds have been subjected to nitrogen ion bombardment. A range of conditions was found within which there was an enhancement in the growth of seedlings from the ion bombardment treated seeds relative to those grown from control seeds. Scanning electron microscopy was used to examine seeds after treatment. It appeared that there had been an etching of the seed coating by the ion bombardment. This view was supported by experiments which showed that the rate of capillary water uptake by the treated seeds had been enhanced. (author)

  2. Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

    Energy Technology Data Exchange (ETDEWEB)

    Yu, L.D., E-mail: yuld@thep-center.org [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Phanchaisri, B. [Institute of Science and Technology Research, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Singkarat, S. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-05-01

    Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence.

  3. Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

    International Nuclear Information System (INIS)

    Yu, L.D.; Sangwijit, K.; Prakrajang, K.; Phanchaisri, B.; Thongkumkoon, P.; Thopan, P.; Singkarat, S.; Anuntalabhochai, S.

    2014-01-01

    Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence

  4. Modelling and simulation of surface morphology driven by ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Yewande, E.O.

    2006-05-02

    Non-equilibrium surfaces, at nanometer length scales, externally driven via bombardment with energetic particles are known to exhibit well ordered patterns with a variety of applications in nano-technology. These patterns emerge at time scales on the order of minutes. Continuum theory has been quite successful in giving a general picture of the processes that interplay to give the observed patterns, as well as how such competition might determine the properties of the nanostructures. However, continuum theoretical descriptions are ideal only in the asymptotic limit. The only other theoretical alternative, which happens to be more suitable for the characteristic length-and time-scales of pattern formation, is Monte Carlo simulation. In this thesis, surface morphology is studied using discrete solid-on-solid Monte Carlo models of sputtering and surface diffusion. The simulations are performed in the context of the continuum theories and experiments. In agreement with the experiments, the ripples coarsen with time and the ripple velocity exhibits a power-law behaviour with the ripple wavelength, in addition, the exponent was found to depend on the simulation temperature, which suggests future experimental studies of flux dependence. Moreover, a detailed exploration of possible topographies, for different sputtering conditions, corresponding to different materials, was performed. And different surface topographies e.g. holes, ripples, and dots, were found at oblique incidence, without sample rotation. With sample rotation no new topography was found, its only role being to destroy any inherent anisotropy in the system. (orig.)

  5. Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA

    International Nuclear Information System (INIS)

    Norarat, R.; Semsang, N.; Anuntalabhochai, S.; Yu, L.D.

    2009-01-01

    Ion beam bombardment of biological organisms has been recently applied to mutation breeding of both agricultural and horticultural plants. In order to explore relevant mechanisms, this study employed low-energy ion beams to bombard naked plasmid DNA. The study aimed at simulation of the final stage of the process of the ion beam bombardment of real cells to check whether and how very low-energy and low-fluence of ions can induce mutation. Argon and nitrogen ions at 5 keV and 2.5 keV respectively bombarded naked plasmid DNA pGFP to very low-fluences, an order of 10 13 ions/cm 2 . Subsequently, DNA states were analyzed using electrophoresis. Results provided evidences that the very low-energy and low-fluence ion bombardment indeed altered the DNA structure from supercoil to short linear fragments through multiple double strand breaks and thus induced mutation, which was confirmed by transfer of the bombarded DNA into bacteria Escherichia coli and subsequent expression of the marker gene.

  6. The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

    NARCIS (Netherlands)

    Holtslag, A.H.M.; Slager, U.C.; van Silfhout, Arend

    1985-01-01

    Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.

  7. Self-organised nano-structuring of thin oxide-films under swift heavy ion bombardment

    International Nuclear Information System (INIS)

    Bolse, Wolfgang

    2006-01-01

    Surface instabilities and the resulting self-organisation processes play an important role in nano-technology since they allow for large-array nano-structuring. We have recently found that the occurrence of such instabilities in thin film systems can be triggered by energetic ion bombardment and the subsequent self-assembly of the surface can be nicely controlled by fine-tuning of the irradiation conditions. The role of the ion in such processes is of double nature: If the instability is latently present already in the virgin sample, but self-assembly cannot take place because of kinetic barriers, the ion impact may just supply the necessary atomic mobility. On the other hand, the surface may become instable due to the ion beam induced material modifications and further irradiation then results in its reorganisation. In the present paper, we will review recently observed nano-scale self-organisation processes in thin oxide-films induced by the irradiation with swift heavy ions (SHI) at some MeV/amu energies. The first example is about SHI induced dewetting, which is driven by capillary forces already present in the as-deposited samples. The achieved dewetting pattern show an amazing similarity to those observed for liquid polymer films on Si, although in the present case the samples were kept at 80 K and hence have never reached their melting point. The second example is about self-organised lamellae formation driven by planar stresses, which are induced by SHI bombardment under grazing incidence and result in a surface instability and anisotropic plastic deformation (hammering effect). Taking advantage of these effects and modifying the irradiation procedure, we were able to generate more complex structures like NiO-'nano-towers' of 2 μm height and 200 nm in diameter

  8. Topography of InP surface bombarded by O2+ ion beam

    International Nuclear Information System (INIS)

    Sun Zhaoqi

    1997-01-01

    The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

  9. Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

    International Nuclear Information System (INIS)

    Horvath, Zs. J.

    1994-01-01

    The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardment. (author). 36 refs., 2 figs

  10. Influence of the ion bombardment of O{sub 2} plasmas on low-k materials

    Energy Technology Data Exchange (ETDEWEB)

    Verdonck, Patrick, E-mail: verdonck@imec.be [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Samara, Vladimir [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Goodyear, Alec [Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Ferchichi, Abdelkarim; Van Besien, Els; Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Braithwaite, Nicholas [Open University, Department of Physics and Astronomy, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

    2011-10-31

    In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little ion bombardment simultaneously in the same plasma, it was possible to verify that ion bombardment in fact helped to protect the low-k film against oxygen plasma induced damage. Exhaustive analyses (ellipsometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, porosimetry, capacitance-voltage (C-V) measurements, water contact angle analysis) show that ion bombardment induced the formation of a denser top layer in the film, which then hampered further penetration of active oxygen species deeper into the bulk. This was further confirmed by other tests combining capacitively and inductively coupled plasmas. Therefore, it was possible to conclude that, at least for these plasmas, ion bombardment may help to reduce plasma induced damage to low-k materials.

  11. Effect of helium ion bombardment on hydrogen behaviour in stainless steel

    International Nuclear Information System (INIS)

    Guseva, M.I.; Stolyarova, V.G.; Gorbatov, E.A.

    1987-01-01

    The effect of helium ion bombardment on hydrogen behaviour in 12Kh18N10T stainless steel is investigated. Helium and hydrogen ion bombardment was conducted in the ILU-3 ion accelerator; the fluence and energy made up 10 16 -5x10 17 cm -2 , 30 keV and 10 16 -5x10 18 cm -2 , 10 keV respectively. The method of recoil nuclei was used for determination of helium and hydrogen content. Successive implantation of helium and hydrogen ions into 12Kh18N10T stainless steel results in hydrogen capture by defects formed by helium ions

  12. Study on evolution of gases from fluoropolymer films bombarded with heavy ions

    International Nuclear Information System (INIS)

    Minamisawa, Renato Amaral; Zimmerman, Robert Lee; Budak, Satilmis; Ila, Daryush

    2008-01-01

    Ion beam bombardment provides a unique way of material modification by inducing a high degree of localized electronic excitation. The ion track, or affected volume along the ion path through the material is related to the total damage and possible structural changes. Here we study the evolution of gases emitted by poly(tetrafluorethylene-co-perfluoro-(propyl vinyl ether)) (PFA) fluoropolymer bombarded with MeV gold ions. The gas was monitored by a residual gas analyzer (RGA), as a function of the ion fluence. Micro-Raman, atomic force microscopy and optical absorption were used to analyze the chemical structure changes and sputtering yield

  13. High Energy Ion Bombardment Simulation Facility at the University of Pittsburgh

    International Nuclear Information System (INIS)

    McGruer, J.N.; Choyke, W.J.; Doyle, N.J.; Spitznagel, J.A.

    1975-01-01

    The High Energy Ion Bombardment Simulation (HEIBS) Facility located at the University of Pittsburgh is now operational. The E-22 tandem accelerator of the Nuclear Physics Laboratory, fitted with a UNIS source, provides the heavy high energy ions. An auxiliary Van de Graaff accelerator is used for the simultaneous production of He ions. Special features of the simulation laboratory are reported

  14. Measurement of electron emission due to energetic ion bombardment in plasma source ion implantation

    Science.gov (United States)

    Shamim, M. M.; Scheuer, J. T.; Fetherston, R. P.; Conrad, J. R.

    1991-11-01

    An experimental procedure has been developed to measure electron emission due to energetic ion bombardment during plasma source ion implantation. Spherical targets of copper, stainless steel, graphite, titanium alloy, and aluminum alloy were biased negatively to 20, 30, and 40 kV in argon and nitrogen plasmas. A Langmuir probe was used to detect the propagating sheath edge and a Rogowski transformer was used to measure the current to the target. The measurements of electron emission coefficients compare well with those measured under similar conditions.

  15. Ion bombardment effects on the fatigue life of stainless steel under simulated fusion first wall conditions

    International Nuclear Information System (INIS)

    Kohse, G.; Harling, O.K.

    1983-01-01

    Pressurized tube specimens have been exposed to simultaneous multi-energy surface ion bombardment, fast neutron irradiation and stress and temperature cycling, in a simulation of a possible fusion reactor first wall environment. After ion bombardments equivalent to months-years of reactor operation and up to 30,000 cycles, no detrimental effects on post-irradiation fatigue life were found. The ion damage is found to enhance surface cracking, but this effect is limited to the several micron surface layer in which the ions are implanted

  16. Target bombardment by ion beams generated in the Focus experiment

    International Nuclear Information System (INIS)

    Bernard, Alain; Coudeville, Alain; Garconnet, J.-P.; Jolas, A.; Mascureau, J. de; Nazet, Christian.

    1976-01-01

    In a Mather-Focus experiment, it was shown that 80% of the neutron emitted were generated through bombardment. The apparatus was operated with various targets at a distance of 13mm from the anode. In the low pressure regime, a deuteron beam of high energy was produced. Its emission duration was measured using a CD 2 target [fr

  17. Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

    Energy Technology Data Exchange (ETDEWEB)

    Awazu, Kaoru; Yoshida, Hiroyuki [Industrial Research Inst. of Ishikawa (Japan); Watanabe, Hiroshi [Gakushuin Univ., Tokyo (Japan); Iwaki, Masaya; Guzman, L [RIKEN, Saitama (Japan)

    1992-04-15

    A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C{sub 6}H{sub 6} gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10{sup 16} ions cm{sup -2}. The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.).

  18. Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

    International Nuclear Information System (INIS)

    Awazu, Kaoru; Yoshida, Hiroyuki; Watanabe, Hiroshi; Iwaki, Masaya; Guzman, L.

    1992-01-01

    A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C 6 H 6 gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10 16 ions cm -2 . The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.)

  19. Silicon nanodot formation and self-ordering under bombardment with heavy Bi3 ions

    International Nuclear Information System (INIS)

    Boettger, Roman; Heinig, Karl-Heinz; Bischoff, Lothar; Liedke, Bartosz; Huebner, Rene; Pilz, Wolfgang

    2013-01-01

    Si nanodots of high density and hexagonal short-range order are observed upon normal-incidence bombardment of hot, crystalline Si with Bi 3 + ions having a kinetic energy of a few tens of keV. The heights of nanodots are comparable to their widths of ∝20 nm. The implanted Bi accumulates in tiny Bi nanocrystals in a thin Si top layer which is amorphous due to implantation damage. Light and heavy ions up to Xe cause smoothing of surfaces, but Bi 3 + ions considered here have a much higher mass. Atomistic simulations prove that each Bi 3 + impact deposits an extremely high energy density resulting in a several nanometer large melt pool, which resolidifies within a few hundreds of picoseconds. Experiments confirm that dot patterns form only if the deposited energy density exceeds the threshold for melting. Comparing monatomic and polyatomic Bi ion irradiation, Bi-Si phase separation and preferential ion erosion are ruled out as driving forces of pattern formation. A model based on capillary forces in the melt pool explains the pattern formation consistently. High-density Si nanodots are formed by polyatomic Bi ion irradiation of hot Si surfaces. Each impact causes local transient melt pools smaller than the dots. Hexagonally ordered patterns evolve by self-organization driven by repeated ion-induced melting of tiny volumes. Homogeneously distributed Bi nanocrystals are found in the a-Si film. These nanocrystals are related to particularities of the Si-Bi phase diagram. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Effects of low-energy ion beam bombardment on metal oxides

    International Nuclear Information System (INIS)

    Sullivan, J.L.; Saied, S.O.; Choudhury, T.

    1993-01-01

    This paper describes a study of Ar ion bombardment damage in metal oxides. In the energy range 1 to 5 keV, preferential oxygen removal and reduction of the oxides was found to depend on ion current density, but to be independent of beam energy. (author)

  1. Effect of ion beam bombardment on the carbide in M2 steel modified by ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.Y.; Wang, F.J.; Wang, Y.K. (Dept. of Materials Engineering, Dalian Univ. of Technology (China)); Ma, T.C. (National Lab. of Materials Modification by Beam Three, Dalian (China))

    1991-10-30

    Transmission electron microscopy was used to study the effect of nitrogen ion bombardment with different doses on the carbides in M2 high speed steel as the nitrogen ions penetrated into the nitride films during ion-beam-assisted deposition. With different doses of nitrogen, alterations in the morphological characteristics of the carbide M6C at the interface were observed. With lower doses, knitting-like contrast within the carbide showed subboundary structure defects in M6C. With increasing dose, the substructure defects were broken up into small fragments owing to heavy bombardment. The microstructures of carbides at the interface damaged by nitrogen ions are discussed in detail. (orig.).

  2. Alteration of the UV-visible reflectance spectra of H2O ice by ion bombardment

    Science.gov (United States)

    Sack, N. J.; Boring, J. W.; Johnson, R. E.; Baragiola, R. A.; Shi, M.

    1991-01-01

    Satellite in the Jovian and Saturnian system exhibit differences in reflectivity between their 'leading' and 'trailing' surfaces which can affect the local vapor pressure. Since these differences are thought to be due to differences in the flux of bombarding magnetospheric ions, the influence of ion impact on the UV-visible reflectance of water ice surfaces (20-90 K) by keV ion bombardment was studied. An observed decrease in reflectance in the UV is attributed to rearrangement processes that affect the physical microstructure and surface 'roughness'. The ratio in reflectance of bombarded to freshly deposited films is compared to the ratio of the reflectance of the leading and trailing hemispheres for Europa and Ganymede.

  3. InN: Fermi level stabilization by low-energy ion bombardment

    International Nuclear Information System (INIS)

    Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J.

    2006-01-01

    The near-surface electronic properties of InN have been investigated with high-resolution electron-energy loss spectroscopy. Low-energy (∝400 eV) nitrogen ion bombardment followed by low temperature annealing (<300 C) was found to dramatically increase the n-type conductivity of InN, close to the surface. This is explained in terms of the formation of amphoteric defects from the ion bombardment and annealing combined with the band structure of InN. Low-energy ion bombardment and annealing is shown to result in a damage-induced, donor-like defect-profile instead of the expected electron accumulation for InN. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Effects of low and high energy ion bombardment on ETFE polymer

    Science.gov (United States)

    Minamisawa, R. A.; De Almeida, A.; Abidzina, V.; Parada, M. A.; Muntele, I.; Ila, D.

    2007-04-01

    The polymer ethylenetetrafluoroethylene (ETFE) is used as anti-adherent coatings for food packages and radiation dosimeters. In this work, we compare the damage induced in ETFE bombarded with 100 keV Si ions with that induced by 1 MeV proton bombardment. The damage depends on the type, energy and intensity of the irradiation. Irradiated films were analyzed with optical absorption photospectrometry, Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy to determine the chemical nature of the structural changes caused by ion irradiation. Computer simulations were performed to evaluate the radiation damage.

  5. Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon

    International Nuclear Information System (INIS)

    Ghazisaeidi, M.; Freund, J. B.; Johnson, H. T.

    2008-01-01

    Ion bombardment of crystalline silicon targets induces pattern formation by the creation of mobile surface species that participate in forming nanometer-scale structures. The formation of these mobile species on a Si(001) surface, caused by sub-keV argon ion bombardment, is investigated through molecular dynamics simulation of Stillinger-Weber [Phys. Rev. B 31, 5262 (1985)] silicon. Specific criteria for identifying and classifying these mobile atoms based on their energy and coordination number are developed. The mobile species are categorized based on these criteria and their average concentrations are calculated

  6. Ion bombardment induced surface topography modification of clean and contaminated single crystal Cu and Si

    International Nuclear Information System (INIS)

    Lewis, G.W.; Kiriakides, G.; Carter, G.; Nobes, M.J.

    1982-01-01

    Among the several factors which lead to depth resolution deterioration during sputter profiling, surface morphological modification resulting from local differences of sputtering rate can be important. This paper reports the results of direct scanning, electron microscopic studies obtained quasi-dynamically during increasing fluence ion bombardment of the evolution of etch pit structures on Si and Cu, and how such elaboration may be suppressed. It also reports on the elaboration of contaminant-induced cone generation for different ion species bombardment. The influence of such etch pit and cone generation on achievable depth resolution is assessed. (author)

  7. The influence of ion bombardment on emission properties of carbon materials

    International Nuclear Information System (INIS)

    Chepusov, Alexander; Komarskiy, Alexander; Kuznetsov, Vadim

    2014-01-01

    When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

  8. The influence of ion bombardment on emission properties of carbon materials

    Energy Technology Data Exchange (ETDEWEB)

    Chepusov, Alexander, E-mail: chepusov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Komarskiy, Alexander, E-mail: aakomarskiy@gmail.com [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Kuznetsov, Vadim, E-mail: kuznetsov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation)

    2014-07-01

    When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

  9. Phenomenology of the plastic flow of amorphous solids induced by heavy-ion bombardment

    International Nuclear Information System (INIS)

    Klaumuenzer, S.; Benyagoub, A.

    1991-01-01

    Amorphous solids exhibit at temperatures far below the glass transition plastic flow when bombarded with fast heavy ions (kinetic energy ∼1 MeV/u). The dimensions perpendicular to the ion beam grow whereas the sample dimension parallel to the ion beam shrinks. The strain tensor describing phenomenologically these dimensional changes is derived from symmetry considerations and compared with experiment. Particular attention is devoted to angular changes, which have not been discussed in this context so far

  10. Kinetics of interaction from low-energy-ion bombardment of surfaces

    International Nuclear Information System (INIS)

    Horton, C.C.

    1988-01-01

    The kinetics of interaction from low energy oxygen ion bombardment of carbon and Teflon surfaces have been investigated. The surfaces were bombarded with 4.5 to 93 eV oxygen ions and emitted species were observed with a mass spectrometer. To obtain the kinetic information, the ion beam was square pulse modulated and reaction products were observed as a function of time. The kinetic information is contained in the response of the emitted species to the pulsed ion beam. Oxygen bombardment of carbon produced CO in three parallel branches with each following an adsorption-desorption process. The fast branch, with a rate constants of 12,000/sec, appeared to be sputter induced an was absent below about 19 eV. The medium and slow branches, with rate constants of 850/sec and 45/sec respectively, has little energy dependence and appeared to be due to chemical sputtering from two sites. The ratio of the fraction of the medium branch to that of the slow was constant at 1:3. The bombardment of Teflon produced CF in two parallel branches, with one following a series process and the other an adsorb-desorb process. The rate constant of the other branch were 22,000/sec and 7,000/sec and the rate constant of the other branch was 90/sec. The total signal fell monotonically with decreasing ion energy with the fraction for each branch holding constant at 71% for the series and 29% for the adsorb-desorb

  11. Friction and wear measurements of sputtered MoS/sub x/ films amorphized by ion bombardment

    International Nuclear Information System (INIS)

    Mikkelsen, N.J.; Chevallier, J.; Soerensen, G.; Straede, C.A.

    1988-01-01

    The present study presents an experimental evidence for amorphization of rf sputtered MoS/sub x/ films by ion bombardment. Even at low doses (3 x 10 15 ions/cm 2 ) of 400 keV argon ions a complete amorphization was confirmed by x-ray diffraction analysis and transmission electron microscopy. As a result of the ion bombardment the film density increased 100% to almost the bulk value for MoS 2 . The friction coefficient for ion beam amorphized MoS/sub x/ was measured to be 0.04 in agreement with the values reported for crystalline films but disagreeing considerably with the friction coefficient of 0.4 previously reported for amorphous films

  12. In-Situ atomic force microscopic observation of ion beam bombarded plant cell envelopes

    International Nuclear Information System (INIS)

    Sangyuenyongpipat, S.; Yu, L.D.; Brown, I.G.; Seprom, C.; Vilaithong, T.

    2007-01-01

    A program in ion beam bioengineering has been established at Chiang Mai University (CMU), Thailand, and ion beam induced transfer of plasmid DNA molecules into bacterial cells (Escherichia coli) has been demonstrated. However, a good understanding of the fundamental physical processes involved is lacking. In parallel work, onion skin cells have been bombarded with Ar + ions at energy 25 keV and fluence1-2 x 10 15 ions/cm 2 , revealing the formation of microcrater-like structures on the cell wall that could serve as channels for the transfer of large macromolecules into the cell interior. An in-situ atomic force microscope (AFM) system has been designed and installed in the CMU bio-implantation facility as a tool for the observation of these microcraters during ion beam bombardment. Here we describe some of the features of the in-situ AFM and outline some of the related work

  13. Influence of ion bombardment on growth and properties of PLD created DLC films

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Písařík, Petr; Kocourek, Tomáš; Zemek, Josef; Lukeš, J.

    2013-01-01

    Roč. 110, č. 4 (2013), s. 943-947 ISSN 0947-8396 R&D Projects: GA MŠk LD12069 Institutional research plan: CEZ:AV0Z10100522 Keywords : DLC * ion bombardment * sp3 /sp2 * thin films * PLD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.694, year: 2013

  14. A note on the random walk theory of recoil movement in prolonged ion bombardment

    International Nuclear Information System (INIS)

    Koponen, Ismo

    1994-01-01

    A characteristic function is derived for the probability distribution of final positions of recoil atoms in prolonged ion bombardment of dense matter. The derivation is done within the framework of Poissonian random walk theory using a jump distribution, which is somewhat more general than those studied previously. ((orig.))

  15. Comparison of Se and Te clusters produced by ion bombardment

    Directory of Open Access Journals (Sweden)

    Trzyna Małgorzata

    2017-01-01

    Full Text Available Nanostructures based on tellurium and selenium are materials used as components for the manufacturing topological insulators. Therefore it is crucial to precisely characterize these materials. In this work the emission of selenium and tellurium cluster ions, sputtered by Bi+ primary ion guns, was investigated by using Time-of-Flight Secondary Ion Mass Spectrometry (TOF SIMS. It has been found that BixTex and BixSex clusters appear in addition to Sex and Tex clusters in the mass range up to ~ 1300 m/z. Local maxima or minima (magic numbers are observed in the ion intensity versus a number of atoms per cluster for both positive and negative ions spectra for all types of clusters and primary ions used. These extrema can be attributed to different yield and stability of certain clusters but also to fragmentation of high-mass clusters.

  16. Comparison of Se and Te clusters produced by ion bombardment

    Science.gov (United States)

    Trzyna, Małgorzata

    2017-01-01

    Nanostructures based on tellurium and selenium are materials used as components for the manufacturing topological insulators. Therefore it is crucial to precisely characterize these materials. In this work the emission of selenium and tellurium cluster ions, sputtered by Bi+ primary ion guns, was investigated by using Time-of-Flight Secondary Ion Mass Spectrometry (TOF SIMS). It has been found that BixTex and BixSex clusters appear in addition to Sex and Tex clusters in the mass range up to 1300 m/z. Local maxima or minima (magic numbers) are observed in the ion intensity versus a number of atoms per cluster for both positive and negative ions spectra for all types of clusters and primary ions used. These extrema can be attributed to different yield and stability of certain clusters but also to fragmentation of high-mass clusters.

  17. Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

    Science.gov (United States)

    Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

    2018-07-01

    Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

  18. Development and evolution of biaxial texture of rolled nickel tapes by ion beam bombardment for high Tc coated conductors

    International Nuclear Information System (INIS)

    Wang, S.S.; Wu, K.; Shi, K.; Liu, Q.; Han, Z.

    2004-01-01

    High quality YBa 2 Cu 3 O 7-x films on metallic substrates with high critical current densities well over 10 6 A/cm 2 can be prepared by the rolling assisted biaxially textured substrates (RABiTS) method. Nickel or its alloys have been used as biaxially textured substrates formed through a specific rolling and high temperature annealing procedures. In this paper, we report a newly developed process for developing biaxial texture in rolled Ni tape by argon ion beam bombardment. It is named the ion-beam structure modification (ISM) process. In the ISM processed Ni foils, X-ray diffraction ω scans showed the full width-half maximum (FWHM) value of the (2 0 0) peak was 5.7 deg. . And the electron back scattering diffraction (EBSP) analysis based on scanning electron microscopy showed good {1 0 0} cubic orientation and the mean grain size was determined as about 25 μm. The texture evolution of rolled Ni foils during ISM process is reported also. For ISM process, local temperature elevation and distribution arises from the ion bombardment, coupled with anisotropic incident ion penetration and propagation as a result of channeling effects in the metal lattice, are expected to play the major roles in the development of grain reorientation in the Ni foil. Due to the simplicity and efficiency of the ISM process, the technique shows a great promise for application in the industrial scale production of long-lengths of superconductor tapes

  19. Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

    2017-07-15

    Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

  20. Ion bombardment induced smoothing of amorphous metallic surfaces: Experiments versus computer simulations

    International Nuclear Information System (INIS)

    Vauth, Sebastian; Mayr, S. G.

    2008-01-01

    Smoothing of rough amorphous metallic surfaces by bombardment with heavy ions in the low keV regime is investigated by a combined experimental-simulational study. Vapor deposited rough amorphous Zr 65 Al 7.5 Cu 27.5 films are the basis for systematic in situ scanning tunneling microscopy measurements on the smoothing reaction due to 3 keV Kr + ion bombardment. The experimental results are directly compared to the predictions of a multiscale simulation approach, which incorporates stochastic rate equations of the Langevin type in combination with previously reported classical molecular dynamics simulations [Phys. Rev. B 75, 224107 (2007)] to model surface smoothing across length and time scales. The combined approach of experiments and simulations clearly corroborates a key role of ion induced viscous flow and ballistic effects in low keV heavy ion induced smoothing of amorphous metallic surfaces at ambient temperatures

  1. Nano-scale pattern formation on the surface of HgCdTe produced by ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, A.B.; Gudymenko, A.I.; Kladko, V.P.; Korchevyi, A.A.; Savkina, R.K.; Sizov, F.F.; Udovitska, R.S. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev (Ukraine)

    2015-08-15

    Presented in this work are the results concerning formation of nano-scale patterns on the surface of a ternary compound Hg{sub 1-x}Cd{sub x}Te (x ∝ 0.223). Modification of this ternary chalcogenide semiconductor compound was performed using the method of oblique-incidence ion bombardment with silver ions, which was followed by low-temperature treatment. The energy and dose of implanted ions were 140 keV and 4.8 x 10{sup 13} cm{sup -2}, respectively. Atomic force microscopy methods were used for the surface topography characterization. The structural properties of MCT-based structure was analyzed using double and triple crystal X-ray diffraction to monitor the disorder and strain of the implanted region as a function of processing conditions. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Effects of uranium bombardment by 20-40 KeV argon ions, Annex 2

    International Nuclear Information System (INIS)

    Nenadovic, T.; Jurela, Z.

    1966-01-01

    This paper shows the results of argon ions interaction with the polycrystal natural uranium. Thin foil of uranium about 200 μ was bombarded by 20-40 KeV argon ions. Coefficients of cathode scattering δ and secondary electrons emission γ were measured, during the process A + →U. The foil was then studied by transmission method and method of single step replica using an electron microscope [sr

  3. Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

    International Nuclear Information System (INIS)

    Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

    1988-01-01

    Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

  4. Surface Morphologies of Ti and Ti-Al-V Bombarded by 1.0-MeV Au+ Ions

    Science.gov (United States)

    Garcia, M. A.; Rickards, J.; Cuerno, R.; Trejo-Luna, R.; Cañetas-Ortega, J.; de la Vega, L. R.; Rodríguez-Fernández, L.

    2017-12-01

    Ion implantation is known to enhance the mechanical properties of biomaterials such as, e.g., the wear resistance of orthopedic joints. Increasing the surface area of implants may likewise improve their integration with, e.g., bone tissue, which requires surface features with sizes in the micron range. Ion implantation of biocompatible metals has recently been demonstrated to induce surface ripples with wavelengths of a few microns. However, the physical mechanisms controlling the formation and characteristics of these patterns are yet to be understood. We bombard Ti and Ti-6Al-4V surfaces with 1.0-MeV Au+ ions. Analysis by scanning electron and atomic force microscopies shows the formation of surface ripples with typical dimensions in the micron range, with potential indeed for biomedical applications. Under the present specific experimental conditions, the ripple properties are seen to strongly depend on the fluence of the implanted ions while being weakly dependent on the target material. Moreover, by examining experiments performed for incidence angle values θ =8 ° , 23°, 49°, and 67°, we confirm the existence of a threshold incidence angle for (ripple) pattern formation. Surface indentation is also used to study surface features under additional values of θ , agreeing with our single-angle experiments. All properties of the surface structuring process are very similar to those found in the production of surface nanopatterns under low-energy ion bombardment of semiconductor targets, in which the stopping power is dominated by nuclear contributions, as in our experiments. We consider a continuum model that combines the effects of various physical processes as originally developed in that context, with parameters that we estimate under a binary-collision approximation. Notably, reasonable agreement with our experimental observations is achieved, even under our high-energy conditions. Accordingly, in our system, ripple formation is determined by mass

  5. Forming controlled inset regions by ion implantation and laser bombardment

    International Nuclear Information System (INIS)

    Gibbons, J.F.

    1981-01-01

    A semiconductor integrated circuit structure in which the inset regions are ion implanted and laser annealed to maintain substantially the dimensions of the implantation and the method of forming inset implanted regions having controlled dimensions

  6. Study on the growth of aligned carbon nanotubes controlled by ion bombardment

    International Nuclear Information System (INIS)

    Wang Biben; Zhang Bing; Zheng Kun; Hao Wei; Wang Wanlu; Liao Kejun

    2004-01-01

    Aligned carbon nanotubes were prepared by plasma-enhanced hot filament chemical vapor deposition using CH 4 , H 2 and NH 3 as reaction gases. It was investigated how different negative bias affects the growth of aligned carbon nanotubes. The results indicate that the average diameter of the aligned carbon nanotubes is reduced and the average length of the aligned carbon nanotubes is increased with increasing negative bias. Because of the occurrence of glow discharge, a cathode sheath forms near the substrate surface, and a number of ions are produced in it, and a very strong electrical field builds up near the substrate surface. Under the effect of the field, the strong bombardment of ions on the substrate surface will influence the growth of aligned carbon nanotubes. Combined with related theories, authors have analyzed and discussed the ion bombardment effects on the growth of the aligned carbon nanotudes

  7. Peculiarities of phase transformations in molybdenum-silicon system under ion bombardment

    International Nuclear Information System (INIS)

    Gurskij, L.I.; Zelenin, V.A.; Bobchenok, Yu.L.

    1984-01-01

    The problems of effect of ion bombardment and thermal treatment on the mechanisms of formation of transition layers and structural transformations in the molybdenum-silicon system, where the interface is subjected to ion bombardment through a film of molybdenum, are considered. The method of electron diffraction analysis has been applied to establish that at the molybdenum-silicon interface a transitional region appears during irradiation which has a semiamorphous structure at the doses up to 8x10 14 ion/cm 2 , while at higher doses it transforms into polycrystalline intermediate layer which consists of MoB and the compound close in composition to MoSisub(0.65). Due to thermal treatment for 60873 K a large-grain phase (Mo 3 Si+MoSi 2 ) appears in the transition layer below which a large-grain silicon layer is placed

  8. Heavy-ion induced desorption yields of cryogenic surfaces bombarded with 4.2 MeV/u lead ions

    CERN Document Server

    Mahner, E; Evans, L; Kollmus, H; Küchler, D; Scrivens, R; Severin, D; Wengenroth, M; CERN. Geneva. ATS Department

    2011-01-01

    The ion-induced desorption experiment, installed in the CERN Heavy-Ion Accelerator LINAC 3, has been used to study the dynamic outgassing of cryogenic surfaces. Two different targets, bare and goldcoated copper, were bombarded under perpendicular impact with 4.2 MeV/u Pb54+ ions. Partial pressure rises of H2, CH4, CO, and CO2 and effective desorption yields were measured at 300, 77, and 6.3 K using single shot and continuous ion bombardment techniques. We find that the heavy-ion-induced desorption yield is temperature dependent and investigate the influence of CO gas cryosorbed at 6.3 K. The gain in desorption yield reduction at cryogenic temperature vanishes after several monolayers of CO are cryosorbed on both targets. In this paper we describe the new cryogenic target assembly, the temperature-dependent pressure rise, desorption yield, and gas adsorption measurements.

  9. Ion bombardment damage in a modified Fe-9Cr-1Mo steel

    International Nuclear Information System (INIS)

    Farrell, K.; Lee, E.H.

    1984-01-01

    A normalized-and-tempered Fe-9Cr-1Mo steel, with small Nb and V additions, was bombarded with 4-MeV iron ions to 100 dpa at 400, 450, 500, 550, and 600 0 C. Major damage feature was dislocation tangles which coarsened with increasing bombardment temperature. Sparse cavities were heterogeneously distributed at 500 and 550 0 C. Incorporation of helium and deuterium simultaneously in the bombardments at rates of 10 and 45 appM/dpa, respectively, introduced very high concentrations of small cavities at all temperatures, many of them on grain boundaries. These cavities were shown to be promoted by helium. A small fraction of the matrix cavities exhibited bias-driven growth at 500 and 550 0 C, with swelling 0 C higher than the peak swelling temperature found in neutron irradiations, which is compatible with the higher damage rate used in the ion bombardments. High concentrations of subgrain boundaries and dislocations resulting from the heat treatment, and unbalanced cavity and dislocation sink strengths in the damage structures contribute to the swelling resistance. Such resistance may not be permanent. High densities of bubbles on grain boundaries indicate a need for helium embrittlement tests

  10. XPS study of vanadium surface oxidation by oxygen ion bombardment

    Czech Academy of Sciences Publication Activity Database

    Alov, N.; Kutsko, D.; Spirovová, Ilona; Bastl, Zdeněk

    2006-01-01

    Roč. 600, č. 8 (2006), s. 1628-1631 ISSN 0039-6028 R&D Projects: GA ČR GA104/04/0467 Institutional research plan: CEZ:AV0Z40400503 Keywords : vanadium oxide * oxide film * ion-beam oxidation * X-ray photoelectron spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.880, year: 2006

  11. Modification of metallic surfaces by positive ion bombardment

    International Nuclear Information System (INIS)

    Rickards C, J.

    1989-01-01

    Reported are the fundamentals and recent advances in the use of ion implantation techniques and gaseous emissions to modify metal surfaces. The physical phenomena involved, the necessary equipment and some applications which have been successful on an industrial scale are described. (Author). 13 refs, 1 fig

  12. Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD.

    Science.gov (United States)

    Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

    2017-11-24

    In order to confirm the key role of Ar + ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar + ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar + ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar + ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar + ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar + ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar + ion state. As for vertically oriented few-layer graphene (VFG), Ar + ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar + ion bombardment, and these special NCMs are promising in many fields.

  13. Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD

    Science.gov (United States)

    Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

    2017-11-01

    In order to confirm the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar+ ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar+ ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar+ ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar+ ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar+ ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar+ ion state. As for vertically oriented few-layer graphene (VFG), Ar+ ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar+ ion bombardment, and these special NCMs are promising in many fields.

  14. Structural and magnetic properties of ion-beam bombarded Co/Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Lin, K.W.; Guo, J.Y.; Lin, S.R.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Tsai, C.J. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300 (China); Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

    2007-12-15

    A series of [Pt(2 nm)/Co(2 nm)]{sub 10}/Pt(30 nm) multilayers were deposited by using an ion-beam technique. X-ray diffraction and transmission electron microscopy results have shown that as-deposited samples consist of h.c.p. Co and f.c.c. Pt phases. Disordered CoPt{sub 3} phases were developed with increasing End-Hall voltage (V{sub EH}) that induces greater ion-beam bombardment energy during deposition. This indicates that intermixing of Co and Pt increases with ion-beam bombardment. The coercivities (ranging from 100 Oe to 300 Oe) of Co/Pt multilayers decreased with increasing V{sub EH}. After annealing, the formation of CoPt{sub 3} was observed in these ion-beam bombarded samples, resulting in lower coercivities (H{sub c}{proportional_to} 50 Oe). The depressed transition temperature of CoPt{sub 3} for films deposited with the largest V{sub EH} was attributed to distorted CoPt{sub 3} structures that appeared with annealing. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Angular and energy dependence of ion bombardment of Mo/Si multilayers

    DEFF Research Database (Denmark)

    Voorma, H.J.; Louis, E.; Bijkerk, F.

    1997-01-01

    The process of ion bombardment is investigated for the fabrication of Mo/Si multilayer x-ray mirrors using e-beam evaporation. The ion treatment is applied immediately after deposition of each of the Si layers to smoothen the layers by removing an additional thickness of the Si layer. In this stu......, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates....

  16. Additional ion bombardment in PVD processes generated by a superimposed pulse bias voltage

    International Nuclear Information System (INIS)

    Olbrich, W.; Kampschulte, G.

    1993-01-01

    The superimposed pulse bias voltage is a tool to apply an additional ion bombardment during deposition in physical vapour deposition (PVD) processes. It is generated by the combination of a d.c. ground voltage and a higher d.c. pulse voltage. Using a superimposed pulse bias voltage in ion-assisted PVD processes effects an additional all-around ion bombardment on the surface with ions of higher energy. Both metal and reactive or inert-gas ions are accelerated to the surface. The basic principles and important characteristics of this newly developed process such as ion fluxes or deposition rates are shown. Because of pulsing the high voltage, the deposition temperature does not increase much. The adhesion, structure, morphology and internal stresses are influenced by these additional ion impacts. The columnar growth of the deposited films could be suppressed by using the superimposed pulse bias voltage without increasing the deposition temperature. Different metallizations (Cr and Cu) produced by arc and sputter ion plating are investigated. Carbon-fibre-reinforced epoxy are coated with PVD copper films for further treatment in electrochemical processes. (orig.)

  17. Composition and structure of ion-bombardment-induced growth cones on InP

    International Nuclear Information System (INIS)

    Malherbe, J.B.; Lakner, H.; Gries, W.H.

    1991-01-01

    The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

  18. Engineering catalytic activity via ion beam bombardment of catalyst supports for vertically aligned carbon nanotube growth

    Science.gov (United States)

    Islam, A. E.; Nikolaev, P.; Amama, P. B.; Zakharov, D.; Sargent, G.; Saber, S.; Huffman, D.; Erford, M.; Semiatin, S. L.; Stach, E. A.; Maruyama, B.

    2015-09-01

    Carbon nanotube growth depends on the catalytic activity of metal nanoparticles on alumina or silica supports. The control on catalytic activity is generally achieved by variations in water concentration, carbon feed, and sample placement on a few types of alumina or silica catalyst supports obtained via thin film deposition. We have recently expanded the choice of catalyst supports by engineering inactive substrates like c-cut sapphire via ion beam bombardment. The deterministic control on the structure and chemistry of catalyst supports obtained by tuning the degree of beam-induced damage have enabled better regulation of the activity of Fe catalysts only in the ion beam bombarded areas and hence enabled controllable super growth of carbon nanotubes. A wide range of surface characterization techniques were used to monitor the catalytically active surface engineered via ion beam bombardment. The proposed method offers a versatile way to control carbon nanotube growth in patterned areas and also enhances the current understanding of the growth process. With the right choice of water concentration, carbon feed and sample placement, engineered catalyst supports may extend the carbon nanotube growth yield to a level that is even higher than the ones reported here, and thus offers promising applications of carbon nanotubes in electronics, heat exchanger, and energy storage.

  19. Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar+ Ion Bombardment

    Science.gov (United States)

    Iwami, Motohiro; Kim, Su Chol; Kataoka, Yoshihide; Imura, Takeshi; Hiraki, Akio; Fujimoto, Fuminori

    1980-09-01

    Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar+ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

  20. Origin of Si(LMM) Auger electron emission from silicon and Si-alloys by keV Ar/sup +/ ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Iwami, M; Kim, S; Kataoka, Y; Imura, T; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1980-09-01

    Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar/sup +/ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

  1. Considerations about projectile and target X-rays induced during heavy ion bombardment

    Science.gov (United States)

    Fernandes, F.; Bauer, D. V.; Duarte, A.; Ferrari, T. M.; Niekraszewicz, L. A. B.; Amaral, L.; Dias, J. F.

    2018-02-01

    In this work we present some results concerning the X-rays emitted by heavy ions during target bombardment. In this case, Cl4+ and Cl5+ ions with energies from 4 MeV to 10 MeV were employed to irradiate vitreous carbon planchets. Moreover, total X-ray production cross sections of titanium X-rays induced by chlorine ions were obtained as well for the same energy range. Only inner shell transitions were considered in the present work. The titanium target consisted of a thin film deposited over vitreous carbon planchets. The results indicate that the projectile X-ray yields increase as a function of the bombarding energy for the present energy range. Effects due to projectile charge state appears to be of minor importance at these low ion velocities. It is shown that a simple exponential function can represent the continuum background of such complex spectra. The chlorine transition rates Kβ/Kα obtained from chlorine acting as a projectile interacting with a carbon target are about half the value when compared to the chlorine Kβ/Kα ratios obtained when a LiCl target is bombarded with C+ and C3+ ions with energies from 2 MeV to 6 MeV. As far as the total X-ray production cross sections of Ti induced by chlorine ions are concerned, the ECPSSR theory underestimates the Ti total X-rays production cross sections by several orders of magnitude. The role of electron capture and possible mechanisms responsible for these effects are discussed.

  2. Investigation of energy thresholds of atomic and cluster sputtering of some elements under ion bombardment

    CERN Document Server

    Atabaev, B G; Lifanova, L F

    2002-01-01

    Threshold energies of sputtering of negative cluster ions from the Si(111) surface were measured at bombardment by Cs sup + , Rb sup + , and Na sup + ions with energy of 0.1-3.0 keV. These results are compared with the calculations of the similar thresholds by Bohdansky etc. formulas (3) for clusters Si sub n sup - and Cu sub n sup - with n=(1-5) and also for B, C, Al, Si, Fe, Cu atoms. Threshold energies of sputtering for the above elements were also estimated using the data from (5). Satisfactory agreement between the experimental and theoretical results was obtained. (author)

  3. The crystalline-to-amorphous transition in ion-bombarded silicon

    International Nuclear Information System (INIS)

    Mueller, G.; Kalbitzer, S.

    1980-01-01

    Hydrogen-free, but defect-rich a-Si can be obtained by ion bombardment of c-Si. The formation of such material has been studied in detail using carrier-removal measurements in the characterization of the bombardment damage. In order to develop an overall view of the disordering process these data are discussed together with results obtained on similar films by Rutherford back-scattering, electron spin resonance, electron microscopy and optical measurements. It is concluded that amorphous material generally evolves from an intermediate crystalline phase supersaturated with point defects. The transition occurs locally at the sites of energetic ion impacts into critically predamaged crystalline material. As a consequence, an amorphous layer is built up from small clusters with dimensions typically of the order of 50 A. From the net expansion of the bombarded layers it is concluded that regions of lower atomic density are locally present, very likely a consequence of a structural mismatch between individual amorphous clusters. In this way a heterogeneous defect structure may build up in these films which determines their electronic properties. (author)

  4. A model for the build-up of disordered material in ion bombarded Si

    International Nuclear Information System (INIS)

    Nelson, R.S.

    1977-01-01

    A new model based on experimental observation is developed for the build-up of disordered material in ion bombarded silicon. The model assumes that disordered zones are created in a background of migrating point defects, these zones then act as neutral sinks for such defects which interact with the zones and cause recrystallization. A simple steady state rate theory is developed to describe the build-up of disordered material with ion dose as a function of temperature. In general the theory predicts two distinct behaviour patterns depending on the temperature and the ion mass, namely a linear build-up with dose to complete disorder for heavy bombarding ions and a build-up to saturation at a relatively low level for light ions such as protons. However, in some special circumstances a transition region is predicted where the build-up of disorder approximately follows a (dose)sup(1/2) relationship before reverting to a linear behaviour at high dose. (author)

  5. Ion bombardment induced topography evolution on low index crystal surfaces of Cu and Pb

    International Nuclear Information System (INIS)

    Tanovic, L.; Tanovic, N.; Carter, G.; Nobes, M.J.

    1993-01-01

    (100), (110) and (111) oriented single crystal surfaces of Cu and Pb have been bombarded with inert gas ions, self ions, ions of the other substrate species and Bi in the energy range 50-150 keV and in the fluence range 10 15 -10 18 ions.cm 2 . The evolving surface topography was observed by scanning electron microscopy. This topography was observed to be strongly influenced by ion species and surface orientation but the habit of the topography was delineated at low fluences and the features increased in size and density with increasing fluence with some mutation to the more stable of the features. As an example Bi and Pb bombardment of (100) Cu leads to little topographic evolution, (110) Cu develops a system of parallel ridges with (100) facets and (111) Cu develops a prismatic surface, each prism possessing (100) facets. These, and the more general, results cannot be explained by surface erosion by sputtering theory alone (this predicts surface stability of the lowest sputtering yield orientation (110), nor by surface free energy density minimisation criteria (this predicts stability of (111) surfaces). It is proposed that the observed topography is most strongly related to the crystallographic form of precipitates of implanted species. (orig.)

  6. High-energy particle emission from galena and pyrite bombarded with Cs and O ions

    International Nuclear Information System (INIS)

    Karpuzov, D.S.; McIntyre, N.S.

    2002-01-01

    The ejection of energetic particles during steady-state ion surface bombardment has been investigated by means of a dynamic computer simulation as well as in a secondary ion mass spectrometry (SIMS)/low-energy ion scattering from surfaces (LEIS) experiment. The emphasis of this comparative study is on the mass dependence of high-energy tails in sputtering and backscattering for the bombardment of galena (PbS) and pyrite (FeS 2 ) with keV energy ion beam of cesium and oxygen. In the experiment, kinetic energy distributions of sputtered secondary ions (S + , Fe + , Pb + , S - ), as well as backscattered or re-sputtered primary ions (Cs + , O + , O - ), have been measured on a modified Cameca IMS-3f magnetic sector mass spectrometer for keV cesium (Cs + ) and oxygen (O 2 + , O - ) bombardment of galena and pyrite. Ejection of high-energy particles, with emission energies of up to ∼40% or up to ∼60% of the bombarding energy for sputtering of the lighter component (S ± ) with cesium or oxygen, respectively, and of up to ∼40% (Cs + ) and ∼80% (O ± ) for backscattering, has been observed for PbS. The computer simulations were based on the well-known MARLOWE code. In order to model the change of the stoichiometry of the binary compounds, dynamic modification of the target composition in the near-surface region was introduced. Cs incorporation was included, and a relative enrichment of the metallic component (Pb, Fe) in the top few layers due to preferential sputtering of sulfur was allowed. The computer simulations provide information on the formation of altered layer under sputter equilibrium as well as on the energy and angular emission distributions of sputtered and backscattered particles in steady-state conditions. Multiple scattering of Cs projectiles and dynamic re-sputtering of cesium that was previously incorporated in the altered near-surface region can be distinguished in the simulation, and matched with the experimental observations. In addition

  7. Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

    Energy Technology Data Exchange (ETDEWEB)

    Prakrajang, K., E-mail: k.prakrajang@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2012-09-01

    This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10{sup 15} to 10{sup 16} ions/cm{sup 2}. The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

  8. Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

    International Nuclear Information System (INIS)

    Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L.D.

    2012-01-01

    This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10 15 to 10 16 ions/cm 2 . The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

  9. Metallic vapor supplying by the electron bombardment for a metallic ion production with an ECR ion source

    Energy Technology Data Exchange (ETDEWEB)

    Kitagawa, Atsushi; Sasaki, Makoto; Muramatsu, Masayuki [National Inst. of Radiological Sciences, Chiba (Japan); Jincho, Kaoru; Sasaki, Noriyuki; Sakuma, Tetsuya; Takasugi, Wataru; Yamamoto, Mitsugu [Accelerator Engineering Corporation, Chiba (Japan)

    2001-11-19

    To produce the metallic ion beam for the injection into the Heavy Ion Medical Accelerator in Chiba (HIMAC) at the National Institute of Radiological Sciences (NIRS), a new gas supply method has been developed for an 18 GHz ECR ion source (NIRS-HEC). A metallic target rod at a high positive potential is melted by the electron bombardment technique. The evaporated gas with a maximum flow rate of 50A/sec is supplied into the ECR plasma in case of Fe metal. (author)

  10. Metallic vapor supplying by the electron bombardment for a metallic ion production with an ECR ion source

    International Nuclear Information System (INIS)

    Kitagawa, Atsushi; Sasaki, Makoto; Muramatsu, Masayuki; Jincho, Kaoru; Sasaki, Noriyuki; Sakuma, Tetsuya; Takasugi, Wataru; Yamamoto, Mitsugu

    2001-01-01

    To produce the metallic ion beam for the injection into the Heavy Ion Medical Accelerator in Chiba (HIMAC) at the National Institute of Radiological Sciences (NIRS), a new gas supply method has been developed for an 18 GHz ECR ion source (NIRS-HEC). A metallic target rod at a high positive potential is melted by the electron bombardment technique. The evaporated gas with a maximum flow rate of 50A/sec is supplied into the ECR plasma in case of Fe metal. (author)

  11. Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

    International Nuclear Information System (INIS)

    Gerbi, Jennifer E.; Abelson, John R.

    2007-01-01

    We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

  12. Ion Back-Bombardment of GaAs Photocathodes Inside DC High Voltage Electron Guns

    CERN Document Server

    Grames, Joseph M; Brittian, Joshua; Charles, Daniel; Clark, Jim; Hansknecht, John; Lynn Stutzman, Marcy; Poelker, Matthew; Surles-Law, Kenneth E

    2005-01-01

    The primary limitation for sustained high quantum efficiency operation of GaAs photocathodes inside DC high voltage electron guns is ion back-bombardment of the photocathode. This process results from ionization of residual gas within the cathode/anode gap by the extracted electron beam, which is subsequently accelerated backwards to the photocathode. The damage mechanism is believed to be either destruction of the negative electron affinity condition at the surface of the photocathode or damage to the crystal structure by implantation of the bombarding ions. This work characterizes ion formation within the anode/cathode gap for gas species typical of UHV vacuum chambers (i.e., hydrogen, carbon monoxide and methane). Calculations and simulations are performed to determine the ion trajectories and stopping distance within the photocathode material. The results of the simulations are compared with test results obtained using a 100 keV DC high voltage GaAs photoemission gun and beamline at currents up to 10 mA D...

  13. On the modification of metal/ceramic interfaces by low energy ion/atom bombardment during film growth

    International Nuclear Information System (INIS)

    Rigsbee, J.M.; Scott, P.A.; Knipe, R.K.; Hock, V.F.

    1986-01-01

    Elemental Cu and Ti films have been deposited onto ceramic substrates with a plasma-aided physical vapor deposition (ion-plating) process. This paper discusses how the structure and chemistry of the metallic film and the metal/ceramic interface are modified by low energy ion and neutral atom bombardment. Emphasis is placed on determining how low energy ion/neutral atom bombardment affects the strength of the metal/ceramic interface. Analyses of the film, interface and substrate regions have employed scanning Auger microprobe, secondary ion mass spectroscopy, SEM/STEM-energy dispersive X-ray and TEM/STEM imaging and microdiffraction techniques. (Auth.)

  14. Absorption of hydrogen in vanadium, enhanced by ion bombardment; Ionenbeschussunterstuetzte Absorption des Wasserstoffs in Vanadium

    Energy Technology Data Exchange (ETDEWEB)

    Paulus, H.; Lammers, M. [Inst. fuer Technologie- und Wissenstransfer, Soest (Germany); Mueller, K.H. [Inst. fuer Technologie- und Wissenstransfer, Soest (Germany)]|[Paderborn Univ. (Gesamthochschule), Soest (Germany). Fachbereich 16 - Elektrische Energietechnik; Kiss, G.; Kemeny, Z. [Technical Univ. Budapest (Hungary)

    1998-12-31

    Prior to hydrogen implantation into vanadium, the vanadium specimen usually is exposed to an activation process and is then heated at 1 atm hydrogen to temperatures between 500 and 600 C, subsequently cooled down in several steps. Within this temperature range, hydrogen solubility increases with declining temperature. A decisive factor determining hydrogen absorption is the fact that at temperatures above 250 C, oxygen desorbs from the material surface and thus no longer inhibits hydrogen absorption. Therefore a different approach was chosen for the experiments reported: Hydrogen absorption under UHV conditions at room temperature. After the usual activation process, the vanadium surface was cleaned by 5 keV Ar{sup +} ion bombardment. Thus oxygen absorption at the specimen surface (and new reactions with oxygen from the remaining gas) could be avoided, or removed. By means of thermal desorption mass spectrometry (TDMS), hydrogen absorption as a function of argon ion dose was analysed. TDMS measurements performed for specimens treated by ion bombardment prior to H{sup 2} exposure showed two H{sup 2} desorption peaks, in contrast to the profiles measured with specimens not exposed to ion bombardment. It is assumed that the ion bombardment disturbs the crystal structure so that further sites for hydrogen absorption are produced. (orig./CB) [Deutsch] Bei der Beladung von Vandium mit Wasserstoff wird ueblicherweise die Probe nach einer Aktivierungsprozedur bei 1 atm Wasserstoff auf Temperaturen im Bereich von 500 bis 600 C hochgeheizt und danach schrittweise abgekuehlt. In diesem Temperaturbereich nimmt die Wasserstoffloeslichkeit mit abnehmender Temperatur zu. Entscheidend fuer die Beladung ist aber auch die Tatsache, dass bei Temperaturen groesser 250 C Sauerstoff von der Oberflaeche desorbiert und dadurch die Absorption von Wasserstoff nicht mehr blockieren kann. Im Rahmen der hier beschriebenen Untersuchungen sollte die Wasserstoffbeladung unter UHV-Bedingungen bei

  15. Influence of ion bombardment induced patterning of exchange bias in pinned artificial ferrimagnets on the interlayer exchange coupling

    Energy Technology Data Exchange (ETDEWEB)

    Schmalhorst, Jan; Reiss, Guenter; Hoenik, V. [Thin Films and Nanostructures, Department of Physics, Univ. Bielefeld (Germany); Weis, Tanja; Engel, Dieter; Ehresmann, Arno [Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology, Kassel Univ. (Germany)

    2007-07-01

    Artificial ferrimagnets (AFi) have many applications as, e.g., pinned reference electrodes in magnetic tunnel junctions. It is known that the application of ion bombardment induced magnetic patterning with He ions on a single layer reference electrode of magnetic tunnel junctions is possible. For some applications a combination of ion bombardment induced magnetic patterning and artificial ferrimagnets as a reference electrode is desirable. The effect of ion bombardment induced magnetic patterning on pinned artificial ferrimagnets with a Ru interlayer which is frequently used in magnetic tunnel junctions as well as pinned AFis with a Cu interlayer has been tested. Special attention has been given to the question whether the antiferromagnetic interlayer exchange coupling can withstand the ion dose necessary to turn the exchange bias.

  16. Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

    International Nuclear Information System (INIS)

    Tuleta, M.; Gabla, L.; Szkarlat, A.

    2005-01-01

    The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

  17. A theoretical approach to sputtering due to molecular ion bombardment, 1

    International Nuclear Information System (INIS)

    Karashima, Shosuke; Ootoshi, Tsukuru; Kamiyama, Masahide; Kim, Pil-Hyon; Namba, Susumu.

    1981-01-01

    A shock wave model is proposed to explain theoretically the non-linear effects in sputtering phenomena by molecular ion bombardments. In this theory the sputtering processes are separated into two parts; one is due to linear effects and another is due to non-linear effects. The treatment of the linear parts is based on the statistical model by Schwarz and Helms concerning a broad range of atomic collision cascades. The non-linear parts are treated by the model of shock wave due to overlapping cascades, and useful equations to calculate the sputtering yields and the dynamical quantities in the system are derived. (author)

  18. Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

    Energy Technology Data Exchange (ETDEWEB)

    Tuleta, M.; Gabla, L. [Jagiellonian Univ., Institute of Physics, Cracow (Poland); Szkarlat, A. [Clinical Children' s Hospital of the Jagiellonian Univ., Medical College, Lab. of Microbiology, Cracow (Poland)

    2005-04-01

    The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

  19. Push-and-stick mechanism for charged and excited small cluster emission under ion bombardment

    International Nuclear Information System (INIS)

    Bitensky, I.S.; Parilis, E.S.; Wojciechowski, I.A.

    1992-01-01

    The mechanism for the formation, excitation and ionization of small clusters emitted under ion bombardment is discussed. It is shown that the increased degree of ionization for the transition metal dimers, trimers and tetramers can be explained by the existence of an additional effective channel for their formation, namely the associative ionization process. A simple estimate shows that the sticking together of a fast cascade atom and the pushed out surface atom is 30-40 times more effective for dimer formation, than the recombination of two fast atoms. This push-and-stick mechanism of cluster formation could also be effective for the formation of trimers and tetramers. (orig.)

  20. A liquid-like model for the morphology evolution of ion bombarded thin films

    Energy Technology Data Exchange (ETDEWEB)

    Repetto, L., E-mail: luca.repetto@unige.it [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Lo Savio, R. [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, B. [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, G.; Angeli, E.; Valbusa, U. [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2015-07-01

    Thin solid films exposed to ion irradiation exhibit a peculiar evolution that can differ substantially from what is observed for bulk samples. The phenomenology of the patterns that self-organize on the substrate is very rich, with morphologies that display several degrees of order upon the modification of initial film characteristics and irradiation parameters. This richness paves the way for the fabrication of novel functional surfaces, but it is also an indication of the complexity of the underlying driving mechanisms. A remarkable simplification for the comprehension of these phenomena can come from the noteworthy similarity of the obtained patterns with those showing up when liquids dewet from their substrates. Here, we analyze the possibility to apply a liquid-like model to explain the morphology evolution of ion bombarded thin films for the whole phenomenology showing up in experiments. In establishing this connection between liquids and ion bombarded thin films, we propose to use also for liquids the insight gained for our system with recent experiments that stress the importance of the substrate topography for the selection of the dewetting mechanism. If confirmed, this result would lead to a reconsideration of the importance of capillary waves in spinodal dewetting, and will help to understand the low reproducibility of the related experimental results.

  1. Conical surface textures formed by ion bombarding 2% Be-Cu alloy

    International Nuclear Information System (INIS)

    Panitz, J.K.G.

    1991-01-01

    A homogeneous, micrometer-sized conical surface texture forms on 2% Be-Cu alloy which is bombarded with an argon beam produced by a Kaufman ion source. The dimensions of the features that form depend strongly on argon energy (from 250 to 1500 eV); argon fluence (10 19 to 10 20 ions cm -2 ); and argon flux (0.1 to 1 mA cm -2 ). The texture morphology depends less strongly on the background ambient (Mo versus graphite), earlier alloy heat treatments and the temperature during bombardment (100 o C and 450 o C). As the texture matures with increasing fluence, the number of large features increases at the expense of the number of small features. The observed relationship between texture formation and ion flux suggests that the evolution of these features is not adequately described by theories predicting that the mature conical side-wall angle is related to the angle of the maximum sputtering yield. These textured surfaces can be coated with other metals for a variety of possible applications including pulsed power Li + beam anodes; cold cathode field emission devices; optical absorbers and catalysis supports. (author)

  2. Effects produced in GaAs by MeV ion bombardment

    International Nuclear Information System (INIS)

    Wie, C.R.

    1985-01-01

    The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

  3. Suppression secondary electrons from target surface under pulsed ion beams bombardment

    International Nuclear Information System (INIS)

    Yang Zhen; Peng Yufei; Long Jidong; Lan Chaohui; Dong Pan; Shi Jinshui

    2012-01-01

    The producing mechanism of secondary electrons from target surface under ion beams bombardment is discussed. Several methods to suppress the secondary electrons in special vacuum devices and their advantages and disadvantages are introduced. The ways of using self-bias and curved surface target are proposed and verified in the experiment. The results show that the secondary electrons can be effectively suppressed when the self-bias is larger than 80 V. The secondary electron yield decreases by using curved surface target instead of flat target. The secondary electron yield calculated from the experimental data is about 0.67, which is slightly larger than the value (0.58) from the literature due to the impurities of the ion beam and target surface. The effect of suppressing the electron countercurrent by the self-bias method is analyzed. The result shows that the self-bias method can not only suppress the secondary electrons from target surface under ion beams bombardment, but also suppress the electron countercurrent resulting from the instability of the pulsed power source. (authors)

  4. Conical surface textures formed by ion bombarding 2% Be Cu alloy

    International Nuclear Information System (INIS)

    Panitz, J.K.G.

    1990-01-01

    A homogeneous, micrometer-sized conical surface texture forms on 2% Be-Cu alloy which is bombarded with an argon beam produced by a Kaufman ion source. The dimensions of the features that form strongly depend on: (1) argon energy (from 250 to 1500 eV), (2) fluence (10 19 to 10 20 ions/cm 2 ), and (3) flux (0.1 to 1 mA/cm 2 ). The texture morphology depends less strongly on the background ambient (Mo vs graphite), earlier alloy heat treatments and the temperature during bombardment (100 degree C and 450 degree C). As the texture matures with increasing fluence, the number of large features increases at the expense of the number of small features. The observed relationship between texture formation and ion flux suggests that the evolution of these features is not adequately described by theories predicting that the mature conical sidewall angle is related to the angle of the maximum sputtering yield. These textured surfaces can be coated with other metals for a variety of possible applications including: (1) pulsed power Li+ beam anodes, (2) cold cathode field emission devices, (3) optical absorbers and (4) catalysis supports. 18 refs., 5 figs

  5. Ion induced electron emission statistics under Agm- cluster bombardment of Ag

    Science.gov (United States)

    Breuers, A.; Penning, R.; Wucher, A.

    2018-05-01

    The electron emission from a polycrystalline silver surface under bombardment with Agm- cluster ions (m = 1, 2, 3) is investigated in terms of ion induced kinetic excitation. The electron yield γ is determined directly by a current measurement method on the one hand and implicitly by the analysis of the electron emission statistics on the other hand. Successful measurements of the electron emission spectra ensure a deeper understanding of the ion induced kinetic electron emission process, with particular emphasis on the effect of the projectile cluster size to the yield as well as to emission statistics. The results allow a quantitative comparison to computer simulations performed for silver atoms and clusters impinging onto a silver surface.

  6. The influence of noble-gas ion bombardment on the electrical and optical properties of clean silicon surfaces

    International Nuclear Information System (INIS)

    Martens, J.W.D.

    1980-01-01

    A study of the effect of argon and helium ion bombardment on the electrical and optical properties of the clean silicon (211) surface is described. The objective of the study was to determine the effect of noble gas ions on the density of surface states at the clean silicon surface. (Auth.)

  7. The effects of argon ion bombardment on the corrosion resistance of tantalum

    Science.gov (United States)

    Ramezani, A. H.; Sari, A. H.; Shokouhy, A.

    2017-02-01

    Application of ion beam has been widely used as a surface modification method to improve surface properties. This paper investigates the effect of argon ion implantation on surface structure as well as resistance against tantalum corrosion. In this experiment, argon ions with energy of 30 keV and in doses of 1 × 1017-10 × 1017 ions/cm2 were used. The surface bombardment with inert gases mainly produces modified topography and morphology of the surface. Atomic Force Microscopy was also used to patterned the roughness variations prior to and after the implantation phase. Additionally, the corrosion investigation apparatus wear was applied to compare resistance against tantalum corrosion both before and after ion implantation. The results show that argon ion implantation has a substantial impact on increasing resistance against tantalum corrosion. After the corrosion test, scanning electron microscopy (SEM) analyzed the samples' surface morphologies. In addition, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. The purpose of this paper was to obtain the perfect condition for the formation of tantalum corrosion resistance. In order to evaluate the effect of the ion implantation on the corrosion behavior, potentiodynamic tests were performed. The results show that the corrosion resistance of the samples strongly depends on the implantation doses.

  8. Immediate fabrication of flower-like graphene oxide by ion beam bombardment

    International Nuclear Information System (INIS)

    Cheng, Junjie; Zhang, Yuanyuan; Zhang, Guilong; Xiong, Shiquan; Pei, Renjun; Cai, Dongqing; Wu, Zhengyan

    2015-01-01

    Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

  9. Immediate fabrication of flower-like graphene oxide by ion beam bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Yuanyuan; Zhang, Guilong [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); University of Science and Technology of China, Hefei 230026 (China); Xiong, Shiquan [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Cai, Dongqing, E-mail: dqcai@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China)

    2015-12-01

    Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

  10. Study and realisation of an ion source obtained by electronic bombardment - experimentation with phosphorus

    International Nuclear Information System (INIS)

    Schneider, Philippe

    1979-01-01

    This research thesis reports the study and development of an ion source by electronic bombardment. In order to solve some practical difficulties (cathode destruction, source instability, and so on), the design of each component has been very careful, notably for the electron gun. The author first briefly discusses the exiting ionisation processes, gives a list of ion which can be produced, with a focus on phosphorus for which the ionisation cross section is defined and assessed. After an assessment of different ionisation processes, and an indication of performance of the best existing sources, the author explains the choice for a totally different process. In the second part, he describes the experimental device, and particularly the electron gun as its design has been an important part of this research work. The source operation is described and its characteristics and performance are studied. Finally, the author outlines that some improvements are still possible to obtain a totally exploitable source [fr

  11. Light ions cyclotron bombardment to simulate fast neutron radiation damage in nuclear materials

    International Nuclear Information System (INIS)

    Segura, E.; Lucki, G.; Aguiar, D.

    1984-01-01

    The applicability and limitations of the use of cyclotron light ions bombardment to simulate the effects of the neutron irradiation are presented. Light ions with energies of about 10 MeV are capable to produce homogeneous damage in specimens suitable for measuring bulk mechanical properties although their low damage rate of 10 -5 dpa.sec -1 limit the dose range to a few dpa. On the other hand, cyclotron alpha particle implantation provides a fast and convenient way of introducing helium with a minimum of side effects so that we can take advantage of this technique to get better understanding of the mechanism by which this insoluble gas produces high temperature embrittlement. Some experimental details such as dimensions and cooling techniques are described. Finally a description of the infrastructure for cyclotron alpha particle implantation and a creep-test facility of the Division of Radiation Damage at IPEN-CNEN/SP are presented. (Author) [pt

  12. Erosion of volatile elemental condensed gases by keV electron and light-ion bombardment

    International Nuclear Information System (INIS)

    Schou, J.

    1991-11-01

    Erosion of the most volatile elemental gases by keV electron and light-ion bombardment has been studied at the experimental setup at Risoe. The present work includes frozen neon, argon, krypton, nitrogen, oxygen and three hydrogen isotopes, deuterium, hydrogen deuteride and hydrogen. The yield of these condensed gases has been measured as a function of film thickness and primary energy for almost all combinations of primary particles (1-3 keV electrons, 5-10 keV hydrogen- and helium ions) and ices. These and other existing results show that there are substantial common features for the sputtering of frozen elemental gases. Within the two groups, the solid rare gases and the solid molecular gases, the similarity is striking. The hydrogenic solids deviate in some respects from the other elements. The processes that liberate kinetic energy for the particle ejection in sputtering are characteristic of the specific gas. (au) 3 tabs., 12 ills., 159 refs

  13. An ion accelerator facility for the preparation of nuclear bombardement targets

    International Nuclear Information System (INIS)

    Grime, G.W.; Takacs, J.

    1981-01-01

    As a result of the demand for increasingly complex nuclear bombardment targets in this laboratory, work has started on the construction of a medium-energy accelerator facility capable of preparing targets both by ion implantation and by heavy-ion sputtering. Basic consideration was given in the design to flexibility and simplicity. The ion source chosen was the Harwell sputter ion gun which is capable of producing ions of practically any element at currents up to several hundred μA. This was modified to suit our specific requirement. The acceleration system was constructed to operate at a maximum of 100 kV, and the beam is focussed by a three-cylinder electrostatic lens. The ions are analysed by 50 0 magnet which is capable of a mass dispersion of 7 mm in the target chamber between adjacent mass numbers at mass 100. A slit feedback system is used to stabilise the energy against short-term fluctuations. The system is fitted with two target chambers; one after the magnet and one after the electrostatic lens. The latter is used for applications such as sputtering. Two dimensional scanning is available in both target chambers for ensuring uniformity of implantation over areas larger than the spot size. Using this apparatus, implanted targets of 3 He and 20 Ne have been prepared. In addition high quality films of refractory metals have been sputtered using Ar or Xe beams. (orig.)

  14. Ion-bombardment effects on the fatigue life of stainless steel under simulated fusion first-wall conditions

    International Nuclear Information System (INIS)

    Kohse, G.E.

    1983-02-01

    An experiment which uses the MITR-II 5 MW research reactor to simulate several aspects of the anticipated environment of a fusion reactor first wall is described. Pressurized tube specimens are subjected simultaneously to stress and temperature cycling, surface bombardment by energetic helium and lithium ions and bulk irradiation by high-energy neutrons. Analysis of the samples is aimed primarily at determining the behavior of the ion bombarded surface layer, which has a depth of 2.5 μm, with particular reference to possible effects on the fatigue life of the material

  15. Recovery of 201Tl by ion exchange chromatography from proton bombarded thallium cyclotron targets

    International Nuclear Information System (INIS)

    Walt, T.N. van der; Naidoo, C.

    2000-01-01

    A method based on ion exchange chromatography is presented for the recovery of 201 Tl and its precursor 201 Pb from proton bombarded natural thallium cyclotron targets. After bombardment the target is dissolved in diluted nitric acid. Water, hydrazine and ammonium acetate are added to the solution and the lead radioisotopes separated from the thallium by cation exchange chromatography on a Bio-Rex 70 column. The sorbed lead radioisotopes are eluted with dilute nitric acid and the separation repeated on a second Bio-Rex 70 column. After elution of the remaining thallium the column is left for 32 hours and the 201 Tl formed by decay of 201 Pb is eluted with an ammonium acetate solution. The 201 Tl eluate is acidified with a HNO 3 -HBr-Br 2 mixture and the resulting solution is passed through an AG MP-1 anion exchanger column to remove any remaining lead isotopes. The 201 Tl is eluted with a hydrazine solution, the eluate evaporated to dryness and the 201 Tl finally dissolved in an appropriate solution to produce a 201 TlCl solution suitable for medical use. A high quality 201 Tl product is obtained containing ≤ 0.1 μg of Tl/mCi (37 MBq) 201 Tl. The radionuclidic impurities are less than the maximum values specified by the US Pharmacopoeia and the British Pharmacopoeia. (orig.)

  16. The development of cones and associated features on ion bombarded copper

    International Nuclear Information System (INIS)

    Whitton, J.L.; Carter, G.; Nobes, M.J.; Williams, J.S.

    1977-01-01

    Observations of ion-bombardment-induced surface modifications on crystalline copper substrates have been made using scanning electron microscopy. The delineation and development of grain boundary edges, faceted and terraced etch pits and small-scale ripple structure, together with the formation of faceted conical features, have all been observed on low and high purity polycrystalline substrates. In general, the density of such surface morphological features, although variable from grain to grain, is higher in the proximity of grain boundaries. In particular, cones are only found within regions where other surface erosional features are present and it would appear that the development of these other features is a pre-requisite to cone generation in high-purity crystalline substrates. We suggest the operation of a defect-induced mechanism of cone formation whereby sputter elaboration of bulk defects (either pre-existing or bombardment-induced) leads to the formation and development of surface features which, in turn, may intersect and result in the generation of cones. (author)

  17. The development of cones and associated features on ion bombarded copper

    International Nuclear Information System (INIS)

    Whitton, J.L.; Williams, J.S.

    1977-01-01

    Observations of ion-bombardment-induced surface modifications on crystalline copper substrates have been made using scanning electron microscopy. The delineation and development of grain boundary edges, faceted and terraced etch pits and small-scale ripple structure, together with the formation of faceted conical features have all been observed on low and high purity polycrystalline substrates. In general, the density of such surface morphological features, although variable from grain to grain, is higher in the proximity of grain boundaries. In particular, cones are only found within regions where other surface erosional features are present and it would appear that the development of these other surface features is a pre-requisite to cone generation in high-purity crystalline substrates. The authors suggest the operation of a defect-induced mechanism of cone formation whereby sputter elaboration of bulk defects (either preexisting or bombardment-induced) leads to the formation and development of surface features which, in turn, may intersect and result in the generation of cones. (Auth.)

  18. Photon emission produced by Kr+ ions bombardment of Cr and Cr2O3 targets

    International Nuclear Information System (INIS)

    Boujlaidi, A. El; Hammoum, K.; Jadoual, L.; Jourdani, R.; Ait El Fqih, M.; Aouchiche, H.; Kaddouri, A.

    2015-01-01

    The sputter induced photon spectroscopy technique was used to study the luminescence spectra of the species sputtered from chromium powder and its oxide Cr 2 O 3 , during 5 keV Kr + ions bombardment in vacuum better than 10 −7 torr. The optical spectra recorded between 350 and 470 nm exhibit discrete lines which are attributed to neutral excited atoms of chromium (Cr I lines). The experiments are also performed under 10 −5 torr ultra pure oxygen partial pressure. The results demonstrate that the measured intensities of the emitted photons are always higher in the presence of oxygen and even higher than those obtained for Cr 2 O 3 target. In the presence of oxygen vapor we assume that an oxide film is formed on the chromium surface which is responsible of the increase of photon emission. This variation in the intensities is correctly explained in the model of electron transfer processes between the excited sputtered atom and the bombarded surface. This model suggests that the structure formed on the Cr surface in the case of oxygenated chromium is closer to that of Cr 2 O 3 oxide

  19. Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

    1993-09-01

    The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

  20. Surface damage studies of ETFE polymer bombarded with low energy Si ions (≤100 keV)

    International Nuclear Information System (INIS)

    Minamisawa, Renato Amaral; Almeida, Adelaide De; Budak, Satilmis; Abidzina, Volha; Ila, Daryush

    2007-01-01

    Surface studies of ethylenetetrafluoroethylene (ETFE), bombarded with Si in a high-energy tandem Pelletron accelerator, have recently been reported. Si ion bombardment with a few MeV to a few hundred keV energies was shown to be sufficient to produce damage on ETFE film. We report here the use of a low energy implanter with Si ion energies lower than 100 keV, to induce changes on ETFE films. In order to determine the radiation damage, ETFE bombarded films were simulated with SRIM software and analyzed with optical absorption photometry (OAP), Raman and Fourier transform infrared-attenuated total reflectance (FTIR-ATR) spectroscopy to show quantitatively the physical and chemical property changes. Carbonization occurs following higher dose implantation, and hydroperoxides were formed following dehydroflorination of the polymer

  1. AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

    Directory of Open Access Journals (Sweden)

    Abidri B.

    2012-06-01

    Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

  2. Dependence of ion - photon emission characteristics on the concentration of implanted atoms of the bombarding beam

    International Nuclear Information System (INIS)

    Belykh, S.F.; Evtukhov, R.N.; Redina, I.V.; Ferleger, V.Kh.

    1989-01-01

    Results of experiment, where Dy + beams, its spraying products emitting intensively optical radiation with continuous spectrum (CSR), are used for tantalum surface bombardment, are presented. The given experiment allowed one to separate the scattered particle CSR contribution and was conducted under controlled beam n atom concentration on the target surface. E 0 energy and j 0 dysprosium ion flux density made up respectively 3.5 keV and 3x10 5 Axcm -2 . The obtained result analysis has shown that a notable dependence of spectrum type on n value is detected. Dy scattered atoms to not emit CSR. The main contribution to CSR is made by sprayed particles, containing dysprosium atoms

  3. Damage structure in Nimonic PE16 alloy ion bombarded to high doses and gas levels

    International Nuclear Information System (INIS)

    Farrell, K.; Packan, N.H.

    1981-01-01

    The Nimonic PE16 alloy in solution-treated-and-aged condition was bombarded simultaneously with nickel ions and α and deuteron beams at 625 0 C to doses of 80 to 313 dpa at He/dpa = 10 and D/dpa = 25. Microstructural changes consisted of the introduction of dislocations and of cavities, and the redistribuion of γ' precipitates to these defects. Cavitational swelling remained below 1%. Cavities were represented by several distinct size classes, the smaller ones believed to be gas bubbles, and some larger ones associated with preferred growth of precipitate. Formation of bubbles at grain boundaries, and large cavities at incoherent twins intensified the possibility of mechanical separation of interfaces under high-gas irradiation conditions

  4. Study of clean and ion bombardment damaged silver single crystal surfaces by work function measurements

    International Nuclear Information System (INIS)

    Chelvayohan, N.

    1982-06-01

    Work function values of the (110), (100) and (111) faces of silver single crystal were measured by the photoelectric emission method and found to be 4.14 +- 0.04 eV, 4.22 +-0.04 eV and 4.46 +- 0.02 eV respectively. Oxygen adsorption on the faces were studied by surface potential measurement. Strong oxygen adsorption was observed on (110) and (100) faces, whereas the (111) face was found to be inert for oxygen adsorption. Oxygen adsorption on the (111) face damaged by argon ion bombardment was also investigated. The above results were compared with those of early reported work function and oxygen adsorption values. (U.K.)

  5. Treatment of PVC using an alternative low energy ion bombardment procedure

    Science.gov (United States)

    Rangel, Elidiane C.; dos Santos, Nazir M.; Bortoleto, José Roberto R.; Durrant, Steven F.; Schreiner, Wido H.; Honda, Roberto Y.; Rangel, Rita de Cássia C.; Cruz, Nilson C.

    2011-12-01

    In many applications, polymers have progressively substituted traditional materials such as ceramics, glasses, and metals. Nevertheless, the use of polymeric materials is still limited by their surface properties. Frequently, selective modifications are necessary to suit the surface to a given application. Amongst the most common treatments, plasma immersion ion implantation (PIII) has attracted the attention of many researchers owing to its versatility and practicality. This method, however, requires a power supply to provide high voltage (tens of kV) negative pulses, with a controlled duty cycle, width and frequency. Owing to this, the implementation of PIII on the industrial scale can become economically inviable. In this work, an alternative plasma treatment that enables low energy ion bombardment without the need of a high voltage pulse generator is presented. To evaluate the efficiency of the treatment of polymers, polyvinylchloride, PVC, specimens were exposed to 5 Pa argon plasmas for 3600 s, at excitation powers, P, of between 10 and 125 W. Through contact angle and atomic force microscopy data, the influence of P on the wettability, surface free energy and roughness of the samples was studied. Surface chemical composition was measured by X-ray photoelectron spectroscopy, XPS. To evaluate the effect of aging under atmospheric conditions, contact angle and XPS measurements were performed one and 1334 days after the treatment. The plasma potential and ion density around the driven electrode were determined from Langmuir probe measurements while the self-bias potential was derived with the aid of an oscilloscope. From these data it was possible to estimate the mean energy of ions bombarding the PVC surface. Chlorine, carbon and oxygen contamination were detected on the surface of the as-received PVC. Upon exposure to the plasma, the proportion of chlorine was observed to decrease while that of oxygen increased. Consequently, the wettability and surface energy

  6. Treatment of PVC using an alternative low energy ion bombardment procedure

    International Nuclear Information System (INIS)

    Rangel, Elidiane C.; Santos, Nazir M. dos; Bortoleto, José Roberto R.; Durrant, Steven F.; Schreiner, Wido H.; Honda, Roberto Y.; Cássia C Rangel, Rita de; Cruz, Nilson C.

    2011-01-01

    In many applications, polymers have progressively substituted traditional materials such as ceramics, glasses, and metals. Nevertheless, the use of polymeric materials is still limited by their surface properties. Frequently, selective modifications are necessary to suit the surface to a given application. Amongst the most common treatments, plasma immersion ion implantation (PIII) has attracted the attention of many researchers owing to its versatility and practicality. This method, however, requires a power supply to provide high voltage (tens of kV) negative pulses, with a controlled duty cycle, width and frequency. Owing to this, the implementation of PIII on the industrial scale can become economically inviable. In this work, an alternative plasma treatment that enables low energy ion bombardment without the need of a high voltage pulse generator is presented. To evaluate the efficiency of the treatment of polymers, polyvinylchloride, PVC, specimens were exposed to 5 Pa argon plasmas for 3600 s, at excitation powers, P, of between 10 and 125 W. Through contact angle and atomic force microscopy data, the influence of P on the wettability, surface free energy and roughness of the samples was studied. Surface chemical composition was measured by X-ray photoelectron spectroscopy, XPS. To evaluate the effect of aging under atmospheric conditions, contact angle and XPS measurements were performed one and 1334 days after the treatment. The plasma potential and ion density around the driven electrode were determined from Langmuir probe measurements while the self-bias potential was derived with the aid of an oscilloscope. From these data it was possible to estimate the mean energy of ions bombarding the PVC surface. Chlorine, carbon and oxygen contamination were detected on the surface of the as-received PVC. Upon exposure to the plasma, the proportion of chlorine was observed to decrease while that of oxygen increased. Consequently, the wettability and surface energy

  7. Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment

    International Nuclear Information System (INIS)

    Paszti, F.; Mezey, G.; Pogany, L.; Fried, M.; Manuaba, A.; Kotai, E.; Lohner, T.; Pocs, L.

    1982-11-01

    Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

  8. Charge-state correlated cross sections for the production of low-velocity highly charged Ne ions by heavy-ion bombardment

    International Nuclear Information System (INIS)

    Gray, T.J.; Cocke, C.L.; Justiniano, E.

    1980-01-01

    We report measured cross sections for the collisional production of highly charged low-velocity Ne recoil ions resulting from the bombardment of a thin Ne gas target by highly charged 1-MeV/amu C, N, O, and F projectiles. The measurements were made using time-of-flight techniques which allowed the simultaneous identification of the final charge state of both the low-velocity recoil ion and the high-velocity projectile for each collision event. For a given incident-projectile charge state, the recoil charge-state distribution is very dependent upon the final charge state of the projectile. Single- and double-electron capture events by incident bare nuclei and projectile K-shell ionization during the collision cause large shifts in the recoil charge-state distributions toward higher charge states. A previously proposed energy-deposition model is modified to include the effects of projectile charge-changing collisions during the collision for bare and hydrogenlike projectiles and is used to discuss the present experimental results

  9. Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

    Energy Technology Data Exchange (ETDEWEB)

    Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Thopan, P.; Yaopromsiri, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation.

  10. Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

    International Nuclear Information System (INIS)

    Thongkumkoon, P.; Prakrajang, K.; Thopan, P.; Yaopromsiri, C.; Suwannakachorn, D.; Yu, L.D.

    2013-01-01

    Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation

  11. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

    International Nuclear Information System (INIS)

    Stevie, F.A.; Kahora, P.M.; Simons, D.S.; Chi, P.

    1988-01-01

    Changes in secondary ion yields of matrix and dopant species have been correlated with changes in surface topography during O + 2 bombardment of Si and GaAs. In Si, profiles were measured in (100) wafers at 6- and 8-keV impact energy. At 6 keV, a yield increase of about 70% occurred for Si + over a depth range of 2.5 to 3.5 μm, with changes in other species ranging from a decrease of ∼20% for Si + 3 to an increase of more than 25% for O + . The development of a rippled surface topography was observed in scanning electron micrographs over the same depth range. Similar effects occurred over a 3--5 μm depth range for 8-keV ions, and in (111) silicon at a depth of 3 to 4 μm for 6-keV ions. No differences were noted between p- and n-type silicon, or implanted and unimplanted silicon. In GaAs, profiles were measured in (100) wafers at 2.5-, 5.5-, and 8-keV impact energies. At 8 keV, a yield increase of about 70% was found for GaO + in the range 0.6--1.0 μm, with smaller changes for other matrix species. At 5.5 keV, similar effects were observed, but over a depth interval of 0.3 to 0.7 μm. No yield changes were detected at 2.5-keV impact energy. The yield changes at the higher energies were again correlated with the onset of changes in topography. No change in ion yield or surface topography was noted for Cs + bombardment of Si or GaAs. The topography and ion yield changes are affected by the angle of incidence and, for Si, the oxygen coverage. The results show that the practice of normalizing secondary ion mass spectrometry dopant profiles to a matrix signal must be modified for situations where matrix yield changes occur

  12. Secondary ion emission from metal surfaces bombarded by 0.5-10 keV protons and hydrogens

    International Nuclear Information System (INIS)

    Kitamura, Akira; Yano, Syukuro

    1978-01-01

    Secondary ion emission coefficients by bombardment of 0.5 - 10 keV protons K 11 and atomic hydrogens K 01 on copper, stainless steel, molybdenum and evaporated gold surfaces have been measured in a moderate vacuum. Results are summarized as follows; 1) There is no significant difference between K 11 and K 01 . 2) Differences in K 11 and K 11 between different samples of the same material and between the sample before baking-out and the same sample after baking-out are of the order of several tens of percent. 3) The incident particle energy E sub(max) at which K 11 and K 01 have the maximum value lies in the keV region, and increases with the target mass. According to the fact that E sub(max) differs substantially from the energy at which the elastic stopping power has the maximum value, a characteristic length l is introduced and calculated to be of the order of hundreds of A; the factor exp (-x/l) represents the degree of contribution of collision at depth x to K 11 or K 01 . (author)

  13. On the defect structure due to low energy ion bombardment of graphite

    Science.gov (United States)

    Marton, D.; Bu, H.; Boyd, K. J.; Todorov, S. S.; Al-Bayati, A. H.; Rabalais, J. W.

    1995-03-01

    Graphite surfaces cleaved perpendicular to the c axis have been irradiated with low doses of Ar + ions at 50 eV kinetic energy and perpendicular incidence. Scanning tunneling micrographs (STM) of these irradiated surfaces exhibited dome-like features as well as point defects. These dome-like features retain undisturbed graphite periodicity. This finding is attributed to the stopping of ions between the first and second graphite sheets. The possibility of doping semiconductors at extremely shallow depths is raised.

  14. Diamond-like carbon prepared by pulsed laser deposition with ion bombardment: physical properties

    Science.gov (United States)

    Písařík, P.; Mikšovský, J.; Remsa, J.; Zemek, J.; Tolde, Z.; Jelínek, M.

    2018-01-01

    Diamond-like carbon (DLC) and titanium-doped DLC thin films were prepared by unique hybrid system consisting of pulsed laser deposition, ion source (bombardment) and magnetron sputtering. The influence of deposition parameters (ion energies, deposition pressures and magnetron power) on composition and physical properties was studied. Composition and sp 3/ sp 2 ratio were determined by XPS. sp 3/ sp 2 ratio was in the range from 1.4 to 2.2 for undoped DLC and from 3.4 to 4.8 for Ti-DLC. AFM showed that the layers were smooth, but with small amounts of random droplets. The measurements of the contact angle and determination of surface free energy were made for water, diiodomethane and ethylene glycol. Hardness and reduced Young's modulus varied from 20 to 31 GPa and from 182 to 276 GPa, respectively. Film adhesion was determined by scratch test; L C3 reached 23 N for DLC and 27 N for TiDLC. Optimization of sp 3/ sp 2 ratio, hardness and adhesion to biomedical alloys will advance the DLC coatings usability in the field of implantology.

  15. L-subshell ionization studies of Au for α-particle and lithium-ion bombardment

    International Nuclear Information System (INIS)

    Dhal, B.B.; Nandi, T.; Padhi, H.C.; Trautmann, D.

    1995-01-01

    L-subshell ionization of Au has been investigated for α-particle and lithium-ion bombardments with energies 0.54-1.74 MeV u -1 and 0.65-1.44 MeV u -1 , respectively. Comparison of experimental x-ray production cross sections with the predictions of the ECPSSR and SCA theories shows reasonably good agreement for L α and L β x-rays, whereas for L γ and L γ1+5 the ECPSSR theory underestimates the cross sections by about 60% for both α-particle and lithium-ion impact, and the SCA theory agrees reasonably well. The ECPSSR theory underestimates the L 1 - and L 2 -subshell ionization cross sections and gives good agreement for the L 3 -subshell, whereas the SCA theory overestimates the L 3 -subshell ionization cross sections and gives good agreement for L 1 and L 2 . The experimental data for the total-ionization cross sections are within 25% of the predictions of both the theories. (Author)

  16. Effect of Ni +-ION bombardment on nickel and binary nickel alloys

    Science.gov (United States)

    Roarty, K. B.; Sprague, J. A.; Johnson, R. A.; Smidt, F. A.

    1981-03-01

    Pure nickel and four binary nickel alloys have been subjected to high energy Ni ion bombardment at 675, 625 and 525°C. After irradiation, each specimen was studied by transmission electron microscopy. The pure nickel control was found to swell appreciably (1 to 5%) and the Ni-Al and the Ni-Ti samples were found to swell at all temperatures, but to a lesser degree (0.01 to 0.35%). The Ni-Mo contained a significant density of voids only at 525° C, while swelling was suppressed at all temperatures in the Ni-Si alloy. The dislocation structure progressed from loops to tangles as temperature increased in all materials except the Ni-Ti, in which there was an absence of loops at all temperatures. Dislocation densities decreased as temperature increased in all samples. These results do not correlate well with the relative behavior of the same alloys observed after neutron irradiation at 455°C. The differences between these two sets of data appear to be caused by different mechanisms controlling void nucleation in ion and neutron irradiation of these alloys.

  17. Ion-beam bombardment induced texture in nickel substrates for coated high-Tc superconductors

    International Nuclear Information System (INIS)

    Wang, S S; Wu, K; Zhou, Y; Godfrey, A; Meng, J; Liu, M L; Liu, Q; Liu, W; Han, Z

    2003-01-01

    Biaxially textured metal substrates are often used for making YBa 2 Cu 3 O 7-x coated conductors with high critical current density. Generally, specific rolling and high-temperature annealing procedures are required to obtain the biaxial texture for metal substrates. Here, we report on a new method for developing strongly biaxially textured grain structure in rolled nickel tape by argon ion-beam bombardment. X-ray diffraction (XRD) θ-2θ scans have shown that a (200) diffraction peak intensity of the Ni foil processed by ion-beam structure modification (ISM) is two orders of magnitude greater than that of cold-rolled foil, while the (111) and (220) intensities are very weak. In the ISM processed Ni foils, from the rocking curve, the full width at half maximum (FWHM) value of the (200) peak has been found to be less than 5.9 deg., whilst the in-plane FWHM obtained from a pole figure analysis is just 8 deg. We discuss the possible mechanisms leading to the texture changes during ISM. (rapid communication)

  18. Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

    Science.gov (United States)

    Cernusca, S.; Winter, HP.; Aumayr, F.; Díez Muiño, R.; Juaristi, J. I.

    2003-04-01

    Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to "projectile molecular effects" (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

  19. Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide

    International Nuclear Information System (INIS)

    Liu Fang; Li, Carolina H.; Pisano, Albert P.; Carraro, Carlo; Maboudian, Roya

    2010-01-01

    Low-energy Ar + ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction in surface energy and to an increase in the compressive stress in the near-surface region.

  20. Changes in phase composition and stress state of surface layers of VK20 hard alloy after ion bombardment

    International Nuclear Information System (INIS)

    Platonov, G.L.; Leonov, E.Yu.; Anikin, V.N.; Anikeev, A.I.

    1988-01-01

    Titanium ion bombardment of the surface of the hard VK20 alloy is studied for its effect on variations in the phase and chemical composition of its surface layers. It is stated that ion treatment results in the appearance of the η-phase of Co 6 W 6 C composition in the surface layer of the VK20 alloy, in the increase of distortions and decrease of coherent scattering blocks of the hard alloy carbide phase. Such a bombardment is found to provoke a transition of the plane-stressed state of the hard alloy surface into the volume-stressed state. It is established that ion treatment does not cause an allotropic transition of the cobalt phase α-modification, formed during grinding of the hard alloy, into the β-modification

  1. Ion bombardment and adsorption studies on ilmenite (FeTiO3) by X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Schulze, P.D.

    1983-01-01

    The effects of 5 KeV argon and oxygen ion bombardment on FeTiO3 (ilmenite) at low temperatures have been studied using x-ray photoelectron spectroscopy (XPS). Also, using this same technique, the adsorption of O 2 , NO, N 2 O, and CO at 300 K and the adsorption of O 2 and D 2 O at 150K have been studied. Argon and oxygen ion bombardment of ilmenite have confirmed earlier studies on metal oxides that argon ions generally reduce the anion species while oxygen ions generally oxidize the anion species. The two iron states involved were Fe sup +2 and Fe sup O. The reduction of Ti sup +4 was not verified although a significant shift in the Ti(2p1,3) binding energies toward the metallic state was observed after oxygen ion bombardment at low temperatures. At temperatures above 150K, O 2 adsorbs dissociatively on ilmenite while D 2 O adsorbs molecularly below 170K. Above 300 K NO, N 2 O, and CO do not appear to adsorb dissociatively. Low temperature adsorption of D 2 O was found to be inhibited by predosing the ilmenite with O 2

  2. Ion bombardment and adsorption studies on ilmenite (FeTiO3) by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Schulze, P. D.

    1983-01-01

    The effects of 5 KeV argon and oxygen ion bombardment on FeTiO3 (ilmenite) at low temperatures have been studied using X-ray photoelectron spectroscopy (XPS). Also, using this same technique, the adsorption of O2, NO, N2O, and CO at 300 K and the adsorption of O2 and D2O at 150K have been studied. Argon and oxygen ion bombardment of ilmenite have confirmed earlier studies on metal oxides that argon ions generally reduce the anion species while oxygen ions generally oxidize the anion species. The two iron states involved were Fe sup +2 and Fe sup O. The reduction of Ti sup +4 was not verified although a significant shift in the Ti(2p1,3) binding energies toward the metallic state was observed after oxygen ion bombardment at low temperatures. At temperatures above 150K, O2 adsorbs dissociatively on ilmenite while D2O adsorbs molecularly below 170K. Above 300 K No, N2O, and CO do not appear to adsorb dissociatively. Low temperature adsorption of D2O was found to be inhibited by predosing the ilmenite with O2.

  3. Systematic analysis of neutron yields from thick targets bombarded by heavy ions and protons with moving source model

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Takashi; Kurosawa, Tadahiro; Nakamura, Takashi E-mail: nakamura@cyric.tohoku.ac.jp

    2002-03-21

    A simple phenomenological analysis using the moving source model has been performed on the neutron energy spectra produced by bombarding thick targets with high energy heavy ions which have been systematically measured at the Heavy-Ion Medical Accelerator (HIMAC) facility (located in Chiba, Japan) of the National Institute of Radiological Sciences (NIRS). For the bombardment of both heavy ions and protons in the energy region of 100-500 MeV per nucleon, the moving source model incorporating the knock-on process could be generally successful in reproducing the measured neutron spectra within a factor of two margin of accuracy. This phenomenological analytical equation is expressed having several parameters as functions of atomic number Z{sub p}, mass number A{sub p}, energy per nucleon E{sub p} for projectile, and atomic number Z{sub T}, mass number A{sub T} for target. By inputting these basic data for projectile and target into this equation we can easily estimate the secondary neutron energy spectra at an emission angle of 0-90 deg. for bombardment with heavy ions and protons in the aforementioned energy region. This method will be quite useful to estimate the neutron source term in the neutron shielding design of high energy proton and heavy ion accelerators.

  4. Mechanism of conductivity type conversion in p-Hg1-xCdxTe crystals under low energy ion bombardment

    International Nuclear Information System (INIS)

    Bogoboyashchij, V.V.; Izhnin, I.I.

    2000-01-01

    Conditions giving rise to accelerated diffusion of Hg under bombardment of p-Hg 1-x Cd x Te by low-energy particles are analyzed and probable mechanisms of the phenomenon are suggested, permitting qualitative and quantitative agreement with experimental data. Analysis indicates that basic regularities of p-n-conversion during Hg 0.8 Cd 0.2 Te crystal bombardment by neutralized ions can be easily explained in the framework of traditional notions of mercury chemical diffusion in this material. The regularities stem from specific features of defect formation in Hg 0.8 Cd 0.2 Te, on the one hand, and from a high concentration of intrinsic electrons and holes, screening effectively the defective layer electric field, on the other hand. The high rate of conversion during ion bombardment compared with the rate of conversion during annealing in mercury vapors can be explained by the fact that a great number of nonequilibrium interstitial atoms of mercury, by far exceeding the value during thermal annealing, is crated near the surface of the crystal bombarded [ru

  5. The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

    International Nuclear Information System (INIS)

    Li, Li; Liu, Honglin; Zou, Lin; Ding, Wanyu; Ju, Dongying; Chai, Weiping

    2013-01-01

    The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

  6. The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

    Energy Technology Data Exchange (ETDEWEB)

    Li, Li; Liu, Honglin; Zou, Lin [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Ding, Wanyu, E-mail: dwysd_2000@163.com [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116028 (China); Ju, Dongying [Department of Material Science and Engineering, Saitama Institute of Technology, Fukaya 369-0293 (Japan); Chai, Weiping [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China)

    2013-10-31

    The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

  7. Effects of incident cluster size, substrate temperature, and incident energy on bombardment of Ni clusters onto Cu (0 0 1) surface studied using molecular dynamics simulation

    International Nuclear Information System (INIS)

    Lin, Shiang-Jiun; Wu, Cheng-Da; Fang, Te-Hua; Chen, Guan-Hung

    2012-01-01

    The bombardment process of a Ni cluster onto a Cu (0 0 1) surface is studied using molecular dynamics (MD) simulations based on the tight-binding second-moment approximation (TB-SMA) many-body potential. The effects of incident cluster size, substrate temperature, and incident energy are evaluated in terms of molecular trajectories, kinetic energy, stress, self-diffusion coefficient, and sputtering yield. The simulation results clearly show that the penetration depth and Cu surface damage increase with increasing incident cluster size for a given incident energy per atom. The self-diffusion coefficient and the penetration depth of a cluster significantly increase with increasing substrate temperature. An incident cluster can be scattered into molecules or atoms that become embedded in the surface after incidence. When the incident energy is increased, the number of volcano-like defects and the penetration depth increase. A high sputtering yield can be obtained by increasing the incident energy at high temperature. The sputtering yield significantly increases with cluster size when the incident energy is above 5 eV/atom.

  8. Ejection of fast recoil atoms from solids under ion bombardment (medium-energy ion scattering by solid surfaces: Pt. 3)

    International Nuclear Information System (INIS)

    Dodonoy, A.I.; Mashkova, E.S.; Molchanov, V.A.

    1989-01-01

    This paper is the third part of our review surface scattering. Part I, which was devoted to the scattering of ions by the surfaces of disordered solids, was published in 1972; Part II, concerning scattering by crystal surfaces, was published in 1974. Since the publication of these reviews the material contained in them has become obsolete in many respects. A more recent account of the status of the problem has been given in a number of studies, including the book by E.S. Mashkova and V.A. Molchanov, Medium-Energy Ion Scattering by Solid Surfaces (Atomizdat, Moscow, 1980), than extended version of which was published by North-Holland in 1985. We note, however, that at the time these reviews were written the study of fast recoil atoms had not been carried out systematically; the problem was studied only as a by-product of surface scattering and sputtering. For this reason, in the above-mentioned works and in other reviews the data relating to recoil atoms were considered only occasionally. In recent years there have appeared a number of works - theoretical, experimental and computer -specially devoted to the study of the ejection of recoil atoms under ion bombardment. A number of interesting effects, which are due to the crystal structure of the target, have been discovered. It therefore, appeared desirable to us to systematize the available material and to present it as Part III of our continuing review. (author)

  9. Influence of keV-He ion bombardment on the magnetic properties of Co/Pd multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Mueglich, Nicolas; Buhl, Oliver; Weis, Tanja; Engel, Dieter; Ehresmann, Arno [Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Hellwig, Olav [San Jose Research Center, HGST, A Western Digital Company, CA (United States)

    2013-07-01

    Thin films of ferromagnetic Co separated by Pd films with thicknesses in the first ferromagnetic maximum of interlayer exchange coupling are magnetically dominated by perpendicular-to-plane anisotropy and labyrinth stripe domain patterns in remanence. During the magnetization reversal of such a multilayer system domain nucleation and domain wall movement can be observed for different external magnetic fields H. The influence of keV-He ion bombardment on the microstructure of the system and its resultant decrease of magnetic anisotropy has been investigated by vibrating sample magnetometry, polar magneto-optical Kerr effect and magnetic force microscopy. It is shown that areas of ferromagnetic in-plane anisotropy are created due to the ion bombardement and that the system shows an increasing quotient of superparamagnetism in the deeper layers of the multilayersystem.

  10. Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures

    International Nuclear Information System (INIS)

    Anderson, K.K.; Donnelly, J.P.; Wang, C.A.; Woodhouse, J.D.; Haus, H.A.

    1988-01-01

    A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1-μm-thick GaAs/AlGaAs 40-period multiple quantum well layer has been achieved by bombardment with 380 keV Ne + ions for 1 h with the sample at 700 0 C. This temperature is much lower than the annealing temperatures used in other vacancy-enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter-profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer

  11. Temperature effect on the formation of a relief of diamond-like carbon coatings and its modification by ion bombardment

    International Nuclear Information System (INIS)

    Rubshtein, A.P.; Trakhtenberg, I.Sh.; Yugov, V.A.; Vladimirov, A.B.; Plotnikov, S.A.; Ponosov, Yu.S

    2006-01-01

    Using the method of pulsed arc sputtering of a graphite target the diamond-like coatings (DLC) ∼1.5 μm thick are deposited on a steel R6M5 substrate. The relief of the coatings obtained under various temperature conditions is investigated. Variations of carbon DLC surfaces are followed after their bombardment with accelerated argon or chemically active oxygen ions. Argon ion bombardment is established to be preferred for producing a smoothed-out DLC relief. It is shown that a DLC relief should be taken into account when measuring microhardness. It is recommended that transformation of interatomic bonds in irradiated subsurface layers be taken into consideration if information index of methods applied constitutes several monolayers [ru

  12. Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

    1987-01-01

    When a photochemical dry etching process requires direct participation of photogenerated carriers in the chemical reaction, it is sensitive to the electronic properties of the semiconductor. For such solid-excitation-based dry etching processes, the balance between reaction and carrier recombination rates determines the practical utility of a particular reaction for device fabrication. The distance from the surface at which the photocarriers are generated by light adsorption is determined by the absorption coefficient. In the absence of an external bias potential, only those carriers formed within a diffusion length of the surface space-charge region will have an opportunity to drive the dry etching reaction. When the absorption coefficient is high, most of the photons generate carriers within a diffusion length from the surface space-charge region, and the etching rate is largely determined by the balance between the rate of the carrier-driven reaction and the surface recombination velocity. When the recombination rate of free carriers in the bulk of the semiconductor is high, the effective diffusion length is reduced and fewer of the carriers generated in the subsurface region ever reach the surface. An important effect of ion bombardment is the creation of many lattice defects that increase the rate of recombination of electrons and holes. When a sufficient number of defects, which act as recombination sites, are formed during ion implantation, the recombination of photogenerated carriers at these defects in the subsurface region can greatly reduce the number of carriers which can reach the surface and drive a photochemical etching reaction

  13. Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, E.; Kotai, E. [Magyar Tudomanyos Akademia, Budapest (HU). Research Inst. for Particle and Nuclear Physics (RIPNP); Khanh, N.Q.; Horvath, Z.E.; Lohner, T.; Battistig, G.; Zolnai, Z.; Gyulai, J. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary)

    2001-07-01

    Damage created by implantation of Al{sup +} ions into 4H-SiC is characterized using backscattering spectrometry in combination with channeling. The measurability of the damage profile in the carbon sublattice was demonstrated using the 4260 keV {sup 12}C({alpha},{alpha}){sup 12}C resonance. To create disorder, Al{sup +} ions with energy of 200 keV and 350 keV were implanted at room temperature. As an independent method, cross-sectional transmission electron microscopy was used to study the damage structure in irradiated 4H-SiC. (orig.)

  14. Diamond-like carbon layers modified by ion bombardment during growth and researched by Resonant Ultrasound Spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Kocourek, Tomáš; Jelínek, Miroslav; Písařík, Petr; Remsa, Jan; Janovská, Michaela; Landa, Michal; Zemek, Josef; Havránek, Vladimír

    2017-01-01

    Roč. 417, Sep (2017), s. 213-217 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GA15-05864S Institutional support: RVO:68378271 ; RVO:61388998 ; RVO:61389005 Keywords : in-situ ion bombardment * pulsed laser deposition * diamond-like carbon * hybrid technology * flm modification Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 3.387, year: 2016

  15. Anomalous time-of-flight distributions observed for argon implanted in silicon and resputtered by Ar+-ion bombardment

    International Nuclear Information System (INIS)

    van Veen, G.N.A.; Sanders, F.H.M.; Dieleman, J.; van Veen, A.; Oostra, D.J.; de Vries, A.E.

    1986-01-01

    A Si substrate is bombarded by 3-keV Ar + ions. From time-of-flight spectra of resputtered Ar neutrals at various target temperatures, we conclude that Ar-bubble formation takes place in the amorphized-Si top layer. The bubbles form and open during etching. The average kinetic energy of the Ar atoms is in agreement with the calculated average potential energy of the Ar atoms inside the bubbles

  16. Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O2+ bombardment

    International Nuclear Information System (INIS)

    Franzreb, Klaus; Williams, Peter; Loerincik, Jan; Sroubek, Zdenek

    2003-01-01

    Mass-resolved (and emission-charge-state-resolved) low-energy ion back-scattering during dynamic O 2 + bombardment of a silicon surface was applied in a Cameca IMS-3f secondary ion mass spectrometry (SIMS) instrument to determine the bombarding energy dependence of the ratio of back-scattered O 2+ versus O + . While the ratio of O 2+ versus O + drops significantly at reduced bombarding energies, O 2+ back-scattered from silicon was still detectable at an impact energy (in the lab frame) as low as about 1.6 keV per oxygen atom. Assuming neutralization prior to impact, O 2+ ion formation in an asymmetric 16 O→ 28 Si collision is expected to take place via 'collisional double ionization' (i.e. by promotion of two outer O 2p electrons) rather than by the production of an inner-shell (O 2s or O 1s) core hole followed by Auger-type de-excitation during or after ejection. A molecular orbital (MO) correlation diagram calculated for a binary 'head-on' O-Si collision supports this interpretation

  17. FTIR and Vis-FUV real time spectroscopic ellipsometry studies of polymer surface modifications during ion beam bombardment

    Science.gov (United States)

    Laskarakis, A.; Gravalidis, C.; Logothetidis, S.

    2004-02-01

    The continuously increasing application of polymeric materials in many scientific and technological fields has motivated an extensive use of polymer surface treatments, which modify the physical and chemical properties of polymer surfaces leading to surface activation and promotion of the surface adhesion. Fourier transform IR spectroscopic ellipsometry (FTIRSE) and phase modulated ellipsometry (PME) in the IR and Vis-FUV spectral regions respectively have been employed for in situ and real time monitoring of the structural changes on the polymer surface obtained by Ar + ion bombardment. The polymers were industrially supplied polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) membranes. The Ar + ion bombardment has found to change the chemical bonding of the films and especially the amount of the CO, C-C and CC groups. The detailed study of the FTIRSE spectra reveals important information about the effect of the Ar + ion bombardment on each of the above bonding groups. Also, the modification of the characteristic features, attributed to electronic transitions in specific bonds of PET and PEN macromolecules, has been studied using PME.

  18. FTIR and Vis-FUV real time spectroscopic ellipsometry studies of polymer surface modifications during ion beam bombardment

    International Nuclear Information System (INIS)

    Laskarakis, A.; Gravalidis, C.; Logothetidis, S.

    2004-01-01

    The continuously increasing application of polymeric materials in many scientific and technological fields has motivated an extensive use of polymer surface treatments, which modify the physical and chemical properties of polymer surfaces leading to surface activation and promotion of the surface adhesion. Fourier transform IR spectroscopic ellipsometry (FTIRSE) and phase modulated ellipsometry (PME) in the IR and Vis-FUV spectral regions respectively have been employed for in situ and real time monitoring of the structural changes on the polymer surface obtained by Ar + ion bombardment. The polymers were industrially supplied polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) membranes. The Ar + ion bombardment has found to change the chemical bonding of the films and especially the amount of the C-O, C-C and C-C groups. The detailed study of the FTIRSE spectra reveals important information about the effect of the Ar + ion bombardment on each of the above bonding groups. Also, the modification of the characteristic features, attributed to electronic transitions in specific bonds of PET and PEN macromolecules, has been studied using PME

  19. Ion peening and stress relaxation induced by low-energy atom bombardment of covalent solids

    International Nuclear Information System (INIS)

    Koster, Monika; Urbassek, Herbert M.

    2001-01-01

    Using molecular-dynamics simulation, we study the buildup and relaxation of stress induced by low-energy (≤150 eV) atom bombardment of a target material. The effect is brought out most clearly by using an initially compressed specimen. As target material, we employ Si, based on the Tersoff potential. By varying the bond strength in the potential, we can specifically study its effect on damage production and stress changes. We find that in general, stress is relaxed by the atom bombardment; only for low bombarding energies and strong bonds, atom bombardment increases stress. We rationalize this behavior by considering the role of energized atoms and of recoil-implanted target atoms

  20. Influence of ion bombardment on structure and properties of TiZrN thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yu-Wei, E-mail: james722@itrc.narl.org.tw [Instrument Technology Research Center, National Applied Research Laboratories Taiwan (China); Huang, Jia-Hong; Yu, Ge-Ping [Department of Engineering and System Science, National Tsing Hua University, Taiwan (China); Hsiao, Chien-Nan; Chen, Fong-Zhi [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China)

    2015-11-01

    Highlights: • (Ti,Zr)N thin films were produced using dual guns with Ti and Zr targets. • Ti{sub 0.5}Zr{sub 0.5}N shows excellent hardness of 37.8 GPa with exhibiting (1 1 1) preferred orientation. • Resistivity is inverse proportional to the packing density. • Hardness is proportional to the packing density. - Abstract: The study is focused on the characterization of TiZrN thin film by controlling the behavior of ion bombardment. Thin films are grown using radio frequency magnetron sputtering process on Si wafer. The negative bias voltage ranging from −20 V to −130 V was applied to the substrate. The ion current density increases rapidly as substrate bias is lower than −60 V, then slightly increases as the critical value about −60 V is exceeded. At the substrate bias of −60 V, the ion current density is close to 0.56 mA/cm{sup 2}. The resistivity measured by four-point probe decreases from conditions −20 V to −60 V and then increases for substrate bias increases from −60 V to −130 V. The resistivity of TiZrN films is contributed from the packing factor. The N/TiZr ratios about 1 were measured by Rutherford backscattering spectrometer, and the packing factors of TiZrN films can also be obtained by the results of RBS. Field Emission scanning electron microscope (FEG-SEM) is used to characterize the thickness and structure of the deposited TiZrN film. X-ray diffraction (XRD) is used to determine the preferred orientation and lattice parameter. The precursor results of XRD show that all the coating samples exhibited (1 1 1) preferred orientation, and the hardness values of TiZrN films were ranging from 20 to 40 GPa. To sum up the precursor studies, the TiZrN films which can improve the properties from TiN and ZrN is a new ceramic material with higher potential. Following the advance process and analysis research, the structure and properties can be correlated and as a reference for industry application.

  1. Radiation effects in zinc oxide: zinc under bombardment with KeV ions

    International Nuclear Information System (INIS)

    Hastings, J.W.L.

    1967-01-01

    The energy loss, light output, depth of deterioration and the deterioration constant have been determined as a function of energy for various atomic projectiles impinging upon samples of a powdered Zn:Zn phosphor at energies below 105 KeV. The energy loss was observed as a reduction in the light output when projectiles traversed thin regions of previously damaged phosphor. The energy losses for heavier projectiles ( 14 N, 40 Ar, 84 Kr), relative to hydrogen, were found to be lower than those predicted for an amorphous stopping medium. The light output for a given projectile was found to be approximately proportional to the amount of energy lost in electronic collisions. When a phosphor is subjected to prolonged bombardment by heavy ions the deterioration depth is fairly well defined and its value was determined by a measurement of the energy loss of a hydrogen beam in traversing the damaged region. The depths are very large, are proportional to the projectile velocity and seem to be determined to a significant degree by electronic stopping. The deterioration constant, C, is a measure of the ability of a projectile to deteriorate a phosphor and its value is proportional to the number of defects introduced in unit distance along the trajectory of the projectile. The constant was determined from measurements of the efficiencies η, and η o , of partly damaged and undamaged phosphor, respectively, using the observed relationship, C (η/η o - 1) n -1 where n is the irradiation dose. The relative magnitudes of the C values for 14 N, 40 Ar were found to be in agreement with measured nuclear energy loss cross sections for these projectiles. (author)

  2. Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

    International Nuclear Information System (INIS)

    Cernusca, S.; Winter, H.P.; Aumayr, F.; Diez Muino, R.; Juaristi, J.I.

    2003-01-01

    Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials

  3. Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

    CERN Document Server

    Cernusca, S; Aumayr, F; Diez-Muino, R; Juaristi, J I

    2003-01-01

    Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

  4. Studies on the bombardment of condensed molecular gases at liquid-He temperatures by keV electrons and light ions

    International Nuclear Information System (INIS)

    Boergesen, P.

    1982-09-01

    Films of solid H 2 , D 2 and N 2 were irradiated with keV electrons and ions. Stopping cross sections and ranges of 0.3-10 keV/amu light ions in solid H 2 and D 2 are in good agreement with experimental and theoretical data on gaseous targets. In contrast, both stopping cross section and range measurements in solid N 2 suggest that the stopping here is only about half of that in N 2 -gas. This ''phase-effect'' is further supported by secondary emission measurements. Secondary electron emission coefficients for 2-10 keV H 1 + , H 2 + , H 3 + , D 3 + , D 2 H + , 4 He + , 14 N + and 20 Ne + incident on solids H 2 , D 2 and N 2 are in reasonable agreement with previous results for electron-incidence. The rather large erosion yields for 1-3 keV electrons incident on solid D 2 depend strongly on target thickness (for thin films), but weakly on energy. Bulk yields for 2 keV electrons were approximately 8 H 2 /electron, approximately 4 D 2 /electron and approximately 0.5 N 2 /electron. Secondary ion emission during ion bombardment seems to be predominantly reflected projectiles in the case of N 2 -targets, while it may be explained as sputtered particles from H 2 - and D 2 -targets. Preliminary results on the erosion of solid H 2 and D 2 by keV light ions indicate very large erosion yields (approx. 400 H 2 /atom for 2 keV protons) increasing strongly with energy. (Auth.)

  5. Improvement of the wear resistance of electroplated Au-Ni coatings by Zr ion bombardment of Ni-B sublayer

    International Nuclear Information System (INIS)

    Lyazgin, Alexander; Shugurov, Artur; Sergeev, Viktor; Neufeld, Vasily; Panin, Alexey; Shesterikov, Evgeny

    2015-01-01

    The effect of bombardment of the Ni-B sublayer by Zr ion beams on the surface morphology and tribomechanical properties of Au-Ni coatings was investigated. It was found that the treatment has no significant effect on the surface roughness and grain size of the Au-Ni coatings, while it provides essential reducing of their friction coefficient and improvement of wear resistance. It is shown that increased wear resistance of these coatings was caused by their strain hardening resulted from localization of plastic strain. The optimal Zr fluence were determined that provide the maximum reduction of linear wear of the coatings

  6. Modeling of metal nanocluster growth on patterned substrates and surface pattern formation under ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Numazawa, Satoshi

    2012-11-01

    are considered as local transition events constrained in potential energy wells over certain local time periods. These processes are represented by Markov chains of multi-dimensional Boolean valued functions in three dimensional lattice space. Consequently, the fluctuating system evolution process is implemented as a Markov chain of equivalence class objects. It is shown that the process can be characterized by the acceptance of metastable local transitions. The method is applied to a problem of Au and Ag cluster growth on a rippled surface. The simulation predicts the existence of a morphology dependent transition time limit from a local metastable to stable state for subsequent cluster growth by accretion. The third topic is the formation of ripple structures on ion bombarded semiconductor surfaces treated in the first topic as the prepatterned substrate of the metallic deposition. This intriguing phenomenon has been known since the 1960's and various theoretical approaches have been explored. These previous models are discussed and a new non-linear model is formulated, based on the local atomic flow and associated density change in the near surface region. Within this framework ripple structures are shown to form without the necessity to invoke surface diffusion or large sputtering as important mechanisms. The model can also be extended to the case where sputtering is important and it is shown that in this case, certain 'magic' angles can occur at which the ripple patterns are most clearly defined. The results including some analytic solutions of the nonlinear equation of motions are in very good agreement with experimental observation.

  7. Modeling of metal nanocluster growth on patterned substrates and surface pattern formation under ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Numazawa, Satoshi

    2012-11-01

    are considered as local transition events constrained in potential energy wells over certain local time periods. These processes are represented by Markov chains of multi-dimensional Boolean valued functions in three dimensional lattice space. Consequently, the fluctuating system evolution process is implemented as a Markov chain of equivalence class objects. It is shown that the process can be characterized by the acceptance of metastable local transitions. The method is applied to a problem of Au and Ag cluster growth on a rippled surface. The simulation predicts the existence of a morphology dependent transition time limit from a local metastable to stable state for subsequent cluster growth by accretion. The third topic is the formation of ripple structures on ion bombarded semiconductor surfaces treated in the first topic as the prepatterned substrate of the metallic deposition. This intriguing phenomenon has been known since the 1960's and various theoretical approaches have been explored. These previous models are discussed and a new non-linear model is formulated, based on the local atomic flow and associated density change in the near surface region. Within this framework ripple structures are shown to form without the necessity to invoke surface diffusion or large sputtering as important mechanisms. The model can also be extended to the case where sputtering is important and it is shown that in this case, certain 'magic' angles can occur at which the ripple patterns are most clearly defined. The results including some analytic solutions of the nonlinear equation of motions are in very good agreement with experimental observation.

  8. Polymerization of solid C60 under C60 cluster ion bombardment

    Czech Academy of Sciences Publication Activity Database

    Lavrentiev, Vasyl; Vacík, Jiří; Naramoto, H.; Narumi, K.

    2009-01-01

    Roč. 95, - (2009), s. 867-873 ISSN 0947-8396 R&D Projects: GA AV ČR(CZ) KAN400480701; GA MŠk(CZ) LC06041 Institutional research plan: CEZ:AV0Z10480505 Keywords : fulleren * cluster * bombardment * polymerization Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.595, year: 2009 http://www.springerlink.com/content/0947-8396

  9. Production of Mg and Al Auger electrons by noble gas ion bombardment of Mg and Al surfaces. [3 KeV, electron promotion

    Energy Technology Data Exchange (ETDEWEB)

    Ferrante, J; Pepper, S V [National Aeronautics and Space Administration, Cleveland, Ohio (USA). Lewis Research Center

    1976-08-01

    In this letter the relative production efficiency of Mg and Al Auger electrons by He, Ne, Ar, Kr and Xe ion bombardment as a function of ion energy (<=3 keV) is reported. Some comments on the interpretation of the results in terms of electron promotion are also given.

  10. Enhancement of sp3 hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation

    International Nuclear Information System (INIS)

    Jung, Hae-Suk; Park, Hyung-Ho; Mendieta, I.R.; Smith, D.A.

    2003-01-01

    We report an effective method of increasing the sp 3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation. In the deposition of an a-C film, Ar ion bombardment by controlling the applied bias voltage plays a role in creating high stress in film and causes the local bonding configuration to change to a sp 3 hybridized bond. Simultaneously, the incorporated Si in an a-C network breaks the sp 2 hybridized bonded ring and promotes the formation of a sp 3 hybridized bond. This enhancement of the sp 3 hybridized bonding characteristic is maximized for an a-C film with 23 at. % of Si and 100-150 V of applied bias voltage. In this region, the increase of resistivity, optical band gap, and mechanical hardness of a-C is attributed to the reduction of the sp 2 hybridized bonded ring and increased fraction of the sp 3 hybridized bond. However, at a higher bias voltage above 150 V, the enhancement effect is reduced due to the resputtering and thermally activated reconversion of a sp 3 to a sp 2 hybridized bond

  11. Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

    2016-08-15

    Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

  12. Properties of TiN coatings deposited by the method of condensation with ion bombardment accompanied by high-energy ion beam

    International Nuclear Information System (INIS)

    Obrezkov, O.I.; Vershok, B.A.; Dormashev, A.B.; Margulev, I.Ya.; Molchanova, S.A.; Andreev, E.S.; Dervuk, V.V.

    2002-01-01

    Vacuum-sputtering adapted commercial facility based coating of stainless steel with titanium nitride followed two procedures: ion bombardment condensation (IBC) and IBC under simultaneous effect of ion beam (IB). The deposition rate was equal to 0.1 μm min -1 ; the investigated coatings were characterized by 2.5 μm depth. Comparison analysis of features and characteristics of the specimens, as well as, full-scale tests of a coated cutting tool enabled to make conclusions about advantages of application of IB assisted IBC technology in contrast to the reference IBC technology [ru

  13. Structural changes IN THE Kh20N45M4B nickel alloys and THE Kh16N15M3B steel due to helium ion bombardment

    International Nuclear Information System (INIS)

    Kalin, B.A.; Chernikov, U.N.; Chernov, I.I.; Kozhevnikov, O.A.; Shishkin, G.N.; Yakushin, V.L.

    1986-01-01

    Using transmission electron microscopy, x-ray structural analysis, and the thermal desorption techniques, the authors carried out a detailed study of the structural and phase changes, defect formation, and helium accumulation in the He + -bombarded 16-15 austenitic steels and 20-45 nickel alloys. Microstructure of the bombarded specimens was studied using the methods of transmission electron microscopy of thin foils in the EVM-100, and EM-301G electron microscopes. Results of x-ray studies on the bombarded specimens are presented. The conducted studies show that bombardment of structural materials with light ions can lead to significant structural damages and changes in the chemical and phase composition of the surface layer. The possible mechanisms of the changes in the chemical and phase composition include selective sputtering and radiation-induced accelerated diffusion of elements in the field of internal lateral stresses developing during the He + implantation process

  14. Influence of both ion bombardment and chemical treatment processes on the electrical conductivity of PVC/poly aniline composites

    International Nuclear Information System (INIS)

    Gad, E.A.M.; Ashour, A.H.; Abdel-Hamid, H.M.; Sayed, W.M.

    1999-01-01

    In this article the changes in the electrical conductivity of PVC/poly aniline composites, as temperature consecutively increases, have been measured. The measurement were taken with correspondence to a control series of the composites under two processes:A. Composite samples bombarded with Ar + ions with fluence 2.44 x 10 13 beam ions /cm 2 ., sec 4 of 4 ke V beam energy where argon atoms can induce defects in the surface layer take place. Composite samples treated chemically with concentrated H 2 SO 4 as dopant which reacts with nitrogen atom in aniline. The measurements were also, done with the composites as the ratio of poly(aniline) stepped upward

  15. Uranium targets sandwiched between carbon layers for use on target wheels and on a Wobbler in heavy-ion bombardments

    International Nuclear Information System (INIS)

    Folger, H.; Hartmann, W.; Klemm, J.; Thalheimer, W.

    1989-01-01

    Uranium layers of ≅ 0.4 mg/cm 2 are evaporated by means of a 6 kW electron-beam gun onto 0.04 mg/cm 2 thick carbon films in a high-vacuum process; a protecting layer of ≅ 0.01 mg/cm 2 of carbon is added in the same vacuum cycle. The evaporation- and deposition yields are discussed and measurements of target characteristics are described. C/U/C sandwich targets in the shape of a sector of an annulus are prepared for use on rotating target wheels of 155 mm radius to be bombarded with a pulsed beam of heavy ions. One type of circular targets of 20 mm in diameter is mounted to a target wobbler. Both, wheel and wobbler, distribute the intensity of the heavy-ion beam to a larger area to reduce radiation damages. Examples of target applications will be mentioned. (orig.)

  16. X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment

    International Nuclear Information System (INIS)

    Abendroth, B.; Gago, R.; Eichhorn, F.; Moeller, W.

    2004-01-01

    Relaxation of the intrinsic stress of cubic boron nitride (cBN) thin films has been studied by x-ray diffraction (XRD) using synchrotron light. The stress relaxation has been attained by simultaneous medium-energy ion bombardment (2-10 keV) during magnetron sputter deposition, and was confirmed macroscopically by substrate curvature measurements. In order to investigate the stress-release mechanisms, XRD measurements were performed in in-plane and out-of-plane geometry. The analysis shows a pronounced biaxial state of compressive stress in the cBN films grown without medium-energy ion bombardment. This stress is partially released during the medium-energy ion bombardment. It is suggested that the main path for stress relaxation is the elimination of strain within the cBN grains due to annealing of interstitials

  17. Influence of helium-ion bombardment on the surface properties of pure and ammonia-adsorbed water thin films

    International Nuclear Information System (INIS)

    Kondo, M.; Shibata, T.; Kawanowa, H.; Gotoh, Y.; Souda, R.

    2005-01-01

    The influence of the ion bombardment on the surface properties of water-ice films has been investigated. The films are irradiated with 1.5 keV He + ions and analyzed sequentially on the basis of time-of-flight secondary-ion mass spectrometry (TOF-SIMS). In order to minimize any temperature-induced effects, the measurements were made at 15 K. The damage of the films, as estimated from the H/D exchange between NH 3 and the D 2 O ice and the intermixing of NH 3 with the H 2 18 O ice, is recognized at the fluence above 2 x 10 14 ions/cm 2 . The sputtering yield of the D 2 O ice is determined as 0.9 ± 0.2 molecules per incoming He + ion. The temperature-programmed TOF-SIMS analysis of the water-ice films has been completed within the fluence of 5.8 x 10 12 ions/cm 2 , so that no appreciable damage of the film should be induced during the measurement

  18. Dependence of secondary electron emission on the incident angle and the energy of primary electrons bombarding bowl-structured beryllium surfaces

    International Nuclear Information System (INIS)

    Kawata, Jun; Ohya, Kaoru.

    1994-01-01

    A Monte Carlo simulation of the secondary electron emission from beryllium is combined with a model of bowl structure for surface roughness, for analyzing the difference between the electron emissions for normal and oblique incidences. At normal incidence, with increasing the roughness parameter H/W, the primary energy E pm at which the maximum electron yield occurs becomes higher, and at more than the E pm , the decrease in the yield is slower; where H and W are the depth and width of the bowl structure, respectively. The dispersion of incident angle to the microscopic surface causes a small increase in the yield at oblique incidence, whereas the blocking of primary electrons from bombarding the bottom of the structure causes an opposite trend. The strong anisotropy in the polar angular distribution with respect to the azimuthal angle is calculated at oblique incidence. (author)

  19. Energy and dose characteristics of ion bombardment during pulsed laser deposition of thin films under pulsed electric field

    International Nuclear Information System (INIS)

    Fominski, V.Yu.; Nevolin, V.N.; Smurov, I.

    2004-01-01

    Experiments on pulsed laser deposition of Fe films on Si substrates were performed with the aim to analyze the role of factors determining the formation of an energy spectrum and a dose of ions bombarding the film in strong pulsed electric fields. The amplitude of the high-voltage pulse (-40 kV) applied to the substrate and the laser fluence at the Fe target were fixed during the deposition. Owing to the high laser fluence (8 J/cm 2 ) at a relatively low power (20 mJ), the ionization of the laser plume was high, but the Fe vapor pressure near the substrate was low enough to avoid arcing. Electric signals from a target exposed to laser radiation were measured under different conditions (at different delay times) of application of electric pulses. The Si(100) substrates were analyzed using Rutherford ion backscattering/channeling spectrometry. The ion implantation dose occurred to be the highest if the high-voltage pulse was applied at a moment of time when the ion component of the plume approached the substrate. In this case, the implanted ions had the highest energy determined by the amplitude of the electric pulse. An advance or delay in applying a high-voltage pulse caused the ion dose and energy to decrease. A physical model incorporating three possible modes of ion implantation was proposed for the interpretation of the experimental results. If a laser plume was formed in the external field, ions were accelerated from the front of the dense plasma, and the ion current depended on the gas-dynamic expansion of the plume. The application of a high-voltage pulse, at the instant when the front approached the substrate, maintained the mode that was characteristic of the traditional plasma immersion ion implantation, and the ion current was governed by the dynamics of the plasma sheath in the substrate-to-target gap. In the case of an extremely late application of a high-voltage pulse, ions retained in the entire volume of the experimental chamber (as a result of the

  20. MD and BCA simulations of He and H bombardment of fuzz in bcc elements

    Science.gov (United States)

    Klaver, T. P. C.; Zhang, S.; Nordlund, K.

    2017-08-01

    We present results of MD simulations of low energy He ion bombardment of low density fuzz in bcc elements. He ions can penetrate several micrometers into sparse fuzz, which allows for a sufficient He flux through it to grow the fuzz further. He kinetic energy falls off exponentially with penetration depth. A BCA code was used to carry out the same ion bombardment on the same fuzz structures as in MD simulations, but with simpler, 10 million times faster calculations. Despite the poor theoretical basis of the BCA at low ion energies, and the use of somewhat different potentials in MD and BCA calculations, the ion penetration depths predicted by BCA are only ∼12% less than those predicted by MD. The MD-BCA differences are highly systematic and trends in the results of the two methods are very similar. We have carried out more than 200 BCA calculation runs of ion bombardment of fuzz, in which parameters in the ion bombardment process were varied. For most parameters, the results show that the ion bombardment process is quite generic. The ion species (He or H), ion mass, fuzz element (W, Ta, Mo, Fe) and fuzz element lattice parameter turned out to have a modest influence on ion penetration depths at most. An off-normal angle of incidence strongly reduces the ion penetration depth. Increasing the ion energy increases the ion penetration, but the rate by which ion energy drops off at high ion energies follows the same exponential pattern as at lower energies.

  1. Reflection and self-sputtering of nickel at oblique angles of ion incidence

    International Nuclear Information System (INIS)

    Hechtl, E.; Eckstein, W.; Roth, J.

    1994-01-01

    Measurement of the erosion yield of a target under ion bombardment using the weight change determines the sum of the sputtering yield and the particle reflection coefficient. The different erosion behavior of a volatile (Kr) and a nonvolatile projectile (Ni) are investigated on a nickel target in the energy range from 60 eV to 10 keV at an incidence angle of 75 . The angular dependence of the erosion yield is studied for 100, 500, and 2500 eV. In comparison with Monte Carlo calculations using the TRIM.SP program it is shown that at low energies ( 1 keV). (orig.)

  2. Influence of substrate pre-treatments by Xe{sup +} ion bombardment and plasma nitriding on the behavior of TiN coatings deposited by plasma reactive sputtering on 100Cr6 steel

    Energy Technology Data Exchange (ETDEWEB)

    Vales, S., E-mail: sandra.vales@usp.br [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Brito, P., E-mail: ppbrito@gmail.com [Pontifícia Universidade Católica de Minas Gerais (PUC-MG), Av. Dom José Gaspar 500, 30535-901 Belo Horizonte, MG (Brazil); Pineda, F.A.G., E-mail: pipe8219@gmail.com [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Ochoa, E.A., E-mail: abigail_ochoa@hotmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Droppa, R., E-mail: roosevelt.droppa@ufabc.edu.br [Universidade Federal do ABC (UFABC), Av. dos Estados, 5001, Santo André, SP CEP 09210-580 (Brazil); Garcia, J., E-mail: jose.garcia@sandvik.com [Sandvik Coromant R& D, Lerkrogsvägen 19, SE-12680, Stockholm (Sweden); Morales, M., E-mail: monieriz@gmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Alvarez, F., E-mail: alvarez@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); and others

    2016-07-01

    In this paper the influence of pre-treating a 100Cr6 steel surface by Xe{sup +} ion bombardment and plasma nitriding at low temperature (380 °C) on the roughness, wear resistance and residual stresses of thin TiN coatings deposited by reactive IBAD was investigated. The Xe{sup +} ion bombardment was carried out using a 1.0 keV kinetic energy by a broad ion beam assistance deposition (IBAD, Kaufman cell). The results showed that in the studied experimental conditions the ion bombardment intensifies nitrogen diffusion by creating lattice imperfections, stress, and increasing roughness. In case of the combined pre-treatment with Xe{sup +} ion bombardment and subsequent plasma nitriding, the samples evolved relatively high average roughness and the wear volume increased in comparison to the substrates exposed to only nitriding or ion bombardment. - Highlights: • Effect of Xe ion bombardment and plasma nitriding on TiN coatings was investigated. • Xe ion bombardment with 1.0 KeV increases nitrogen retention in plasma nitriding. • 1.0 KeV ion impact energy causes sputtering, thus increasing surface roughness. • TiN coating wear is minimum after plasma nitriding due to lowest roughness.

  3. Radiation-induced segregation in light-ion bombarded Ni-8% Si

    International Nuclear Information System (INIS)

    Packan, N.H.; Heatherly, L.; Kesternich, W.; Schroeder, H.

    1986-01-01

    Tensile specimens 60 μm thick of Ni-8 at. % Si have been bombarded at 475 0 C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700 0 C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no noticeable depletion zone and a more gradual fall-off compared to the profiles from external surfaces. The variations of RIS among boundaries and with type of interface probably reflect, at least in part, intrinsic differences in sink efficiency

  4. M-subshell ionization of U by light-ion bombardment

    International Nuclear Information System (INIS)

    Jesus, A.P.; Ribeiro, J.P.

    1988-01-01

    M X-rays of U were produced by proton, deuteron and alpha-particle bombardment in the energy range of 0.20-1.00 MeV/u. N 6.7 →M 5 ((M subα)),N 6 →M 4 (M β ), N 5 →M 3 (M γ ), N 4 →M 2 and N 2 →M 1 line yields were obtained from a least-squares fit to the spectra and used to convert M X-ray production into M-subshell ionization cross sections. The uncertainty induced by the atomic parameters (X-ray fluorescence yields, Coster-Kronig and radiative transition rates) used in the conversion is discussed. The subshell ionization cross sections are then compared to PWBA values corrected for Coulomb deflection and energy loss according to Brandt and Lapicki, to the semiclassical theoretical values of Kocbach and to relativistic PWBA results, corrected for Coulomb and binding effects, of Chen et al. Intrashell transitions induced by the projectile and multiple ionization are suggested as causes of disagreement between theory and experiment, especially for alpha-particles. It is concluded that theory must go beyond the simple picture of the first-order pertubation approximation to explain M-subshell results and the care must be taken in the choice of wave functions. (author) [pt

  5. Measurements of secondary neutrons producted from thick targets bombarded by heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Kurosawa, T.; Nakamura, T. [Tohoku Univ., Sendai (Japan). Cyclotron and Radioisotope Center; Nakao, N.; Shibata, T.; Uwamino, Y.; Nakanishi, N.; Fukumura, A.; Kumamoto, Y.

    1997-03-01

    We measured neutron angular and energy distributions from high energy heavy ions stopping in targets of carbon, aluminum, copper and lead at HIMAC. These spectra are much harder for the lighter target nucleus like carbon. This means that the momentum transfer in the forward direction from heavy ion beam to lighter nuclei is much higher than that to heavier nuclei. (author)

  6. Successive ionization of positive ions of carbon and nitrogen by electron bombardment

    International Nuclear Information System (INIS)

    Donets, E.D.; Ilyushchenko, V.I.

    Experimental studies of deep ionization of heavy ions are described. The applications of such studies in atomic physics, plasma physics and space physics are discussed. Investigations using intersecting ion-electron beams, shifted beams and ion trap sources are described, and data are presented for multi-charged ions of carbon, oxygen and nitrogen. A detailed description of the development of the IEL (electron beam ionizer) source, and the KRION (cryogenic version) source is given, and further data for the multiple ionization of carbon and nitrogen are given for charge states up to C 6+ and N 7+ . The advantages and disadvantages of the KRION source are discussed, and preliminary studies of a new torroidal ion trap source (HIRAC) are presented. (11 figs, 57 refs) (U.S.)

  7. MD simulation of atomic displacements in metals and metallic bilayers under low energy ion bombardment at 300 K

    International Nuclear Information System (INIS)

    Kornich, G.V.; Betz, G.; Bazhin, A.I.

    1999-01-01

    MD simulations of 100 eV Ar ion bombardment of (1 0 0) Ni and Al as well as Al/Ni bilayer crystals at 300 K have been performed and compared to previous calculations at 0 K. The Al/Ni bilayer crystal consisted of one Al layer on a (1 0 0) Ni substrate. Sputtering yields for Ni and Al/Ni show no temperature dependence, while for Al a pronounced increase with temperature was observed. The contributions of different mechanisms to the production of surface and bulk defects are discussed. The mean square displacement (MSD) of atoms is in all cases larger at 300 K as compared to 0 K. The larger MSD at 300 K is mainly due to an increase in lateral (perpendicular to the ion beam) motion of displaced atoms. Similar the number of atomic jumps, in which an atom leaves its original Wigner-Seitz cell, increases in all cases with temperature. For the pure elements the production of bulk vacancies and interstitials decreases with temperature, but the number of surface vacancies and ad-atoms increases with temperature. For the bilayer system practically no temperature dependence for defects was observed

  8. The change of corrosion resistance of metals after bombardment by inert gas ions

    International Nuclear Information System (INIS)

    Vasil'ev, M.A.; Panarin, V.E.; Kosyachkov, A.A.

    2002-01-01

    Work functions of electrons and secondary ions of iron and oxygen from the surface of pure iron specimens pre-irradiated by argon ions were studied experimentally. One made use of the determined dependences in the experiments to passivate surface of low-carbon steel using the BULAT type commercial facilities. The designed extra device for those facilities ensured the required irradiation doses (equal to 10 17 atom x cm -2 ) resulting in improvement of steel corrosion resistance by several times [ru

  9. Short-range order in InSb amorphized under ion bombardment

    International Nuclear Information System (INIS)

    Pavlov, P.V.; Tetel'baum, D.I.; Gerasimov, A.I.

    1979-01-01

    The investigation of short-range order is carried out in polycrystal InSb films, irradiated with Ne + ions with E=150 keV and with the 2x10 15 ion/cm 2 dose. The data are obtained testifying to the film amorphization, the cause of which is the defect storage but not the local melting. Stability of the obtained amorphous phase at the room temperature is noted

  10. Use of positive ion fast atom bombardment mass spectrometry for rapid identification of a bile alcohol glucuronide isolated from cerebrotendinous xanthomatosis patients

    International Nuclear Information System (INIS)

    Dayal, B.; Salen, G.; Tint, G.S.; Shefer, S.; Benz, S.W.

    1990-01-01

    The identification of a major biliary and plasma bile alcohol glucuronide, 5 beta-cholestane-3 alpha, 7 alpha, 12 alpha, 25-tetrol-3-0-beta-D-glucuronide, present in cerebrotendinous xanthomatosis (CTX) patients, was investigated by positive ion fast atom bombardment mass spectrometry (FAB-MS). The spectrum was characterized by abundant ions formed by attachment of a proton, [M + H]+, or of alkali ions, [M + Na]+ and [M + 39K]+, to the glucuronide salt. These ions allowed an unambiguous deduction of the molecular weight of the sample. It is suggested that FAB-MS could be used in the rapid diagnosis of CTX

  11. The interdependence between the incidence angles associated with quasi-stable intersections during ion erosion

    International Nuclear Information System (INIS)

    Vasiliu, F.; Frunza, S.

    1984-01-01

    A general discussion, which is valid for any angular dependence of sputtering yield S = S(theta), concerning the interdependence between the incidence angles thetasub(e) and theta 0 , associated with quasi-stable intersections during ion erosion, is given. The object was firstly to establish the location of thetasub(e) roots as a function of theta 0 and secondly to identify the stationary points and general trend for the complex dependence thetasub(e) = thetasub(e)(theta 0 ). The results obtained are applied to a quasi-stability analysis of some specific surface features during ion erosion. Various possible types of quasi-stable intersections (surface-surface, plane-surface, plane-plane) are reviewed from the point of view of their evolution caused by ion bombardment. (author)

  12. Secondary ions produced from condensed rare gas targets under highly charged MeV/amu heavy ion bombardment

    International Nuclear Information System (INIS)

    Tawara, H.; Tonuma, T.; Kumagai, H.; Matsuo, T.

    1994-01-01

    Secondary ions produced from condensed rare gas targets are observed under MeV/amu, highly charged, heavy ion impact. The intensities of the observed cluster ions decrease smoothly as the cluster sizes become large but show some discontinuities at particular sizes of cluster ions. This seems to be closely related to the stabilities of cluster ion structures. It is also noted that very few doubly charged or practically no triply/higher charged ions have been observed, in sharp contrast to that of some condensed molecular targets. (orig.)

  13. A comparison between the irradiation damage response of spinel and zirconia due to Xe ion bombardment

    International Nuclear Information System (INIS)

    Sickafus, K.E.; Wetteland, C.J.; Baker, N.P.; Yu Ning; Devanathan, R.; Nastasi, M.; Bordes, N.

    1998-01-01

    The mechanical properties of Xe-implanted spinel and cubic zirconia surfaces, as determined by nano-indentation measurements, are distinct and the differences can be related to their microstructures. Upon Xe 2+ ion irradiation to high dose at cryogenic temperature (120 K), the Young's modulus of irradiated spinel falls dramatically until the modulus is only about 3/4 the un-irradiated value. The maximum modulus occurs concurrent with the formation of a metastable crystalline phase of spinel. The subsequent elastic softening at higher Xe 2+ doses is an indication of the onset of amorphization of the spinel. Xe-implanted zirconia surfaces behave differently, in all cases showing almost no change in elastic modulus with increasing Xe 2+ ion dose. This is consistent with microstructural observations of Xe-implanted zirconia crystals which, unlike spinel, show no change in crystal structure with increasing ion dose. The hardness of both spinel and zirconia increases slightly for low Xe 2+ ion doses. At higher doses, zirconia shows little change in hardness, while the hardness of the implanted spinel falls by more than a factor of two. The initial increase in hardness of both spinel and zirconia is consistent with point defect accumulation and the precipitation of small interstitial clusters, while the drop in hardness of spinel at high Xe 2+ ion doses is due to the formation of an amorphous phase. (orig.)

  14. Effect of N4+ and C4+ ion beam bombardment on the optical and structural characteristics of ethylene-norbornene copolymer (TOPAS)

    International Nuclear Information System (INIS)

    Siljegovic, M.; Kacarevic-Popovic, Z.M.; Krkljes, A.N.; Stojanovic, Z.; Jovanovic, Z.M.

    2011-01-01

    Ion bombardment is a suitable tool to modify the optical properties of polymers. In the present study the effect of ion bombardment on the optical absorption of ethylene-norbornene copolymer (TOPAS) was studied using ultraviolet-visible (UV-Vis) and Raman spectroscopy. Polymer samples were bombarded with 60 keV C 4+ and N 4+ ion beams to various fluences ranging from 1.0 x 10 13 to 1.0 x 10 16 cm -2 . The indirect and direct band gaps have been determined. The values of direct band gaps have been found to be greater than the corresponding values of the indirect band gaps. Activation energy has been investigated as the function of ion fluences. The number of carbon atoms per conjugated length is determined according to modified Tauc's equation. The correlation between the optical band gap, activation energy for optical transition and the number of carbon atoms per conjugated length as well as chemical structure changes induced by ion beams irradiation have been discussed in the case of ethylene-norbornene copolymer.

  15. Defect production and annihilation in metals through electronic excitation by energetic heavy ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Iwase, Akihiro [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1997-03-01

    Defect production, radiation annealing and defect recovery are studied in Ni and Cu irradiated with low-energy ({approx}1-MeV) and high-energy ({approx}100-MeV) ions. Irradiation of Ni with {approx}100-MeV ions causes an anomalous reduction, or even a complete disappearance of the stage-I recovery. This result shows that the energy transferred from excited electrons to lattice atoms through the electron-lattice interaction contributes to the annihilation of the stage-I interstitials. This effect is also observed in Ni as a large radiation annealing during 100-MeV heavy ion irradiation. On the other hand, in Cu thin foils, we find the defect production process strongly associated with electron excitation, where the defect production cross section is nearly proportional to S{sub e}{sup 2}. (author)

  16. Monte Carlo simulation for neutron yield produced by bombarding thick targets with high energy heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Oranj, Leila Mokhtari; Oh, Joo Hee; Yoon, Moo Hyun; Lee, Hee Seock [POSTECH, Pohang (Korea, Republic of)

    2013-04-15

    One of radiation shielding issues at heavy-ion accelerator facilities is to estimate neutron production by primary heavy ions. A few Monte Carlo transport codes such as FLUKA and PHITS can work with primary heavy ions. Recently IBS/RISP((Rare Isotope Science Project) started to design a high-energy, high-power rare isotope accelerator complex for nuclear physics, medical and material science and applications. There is a lack of experimental and simulated data about the interaction of major beam, {sup 238}U with materials. For the shielding design of the end of first accelerating section section, we calculate a differential neutron yield using the FLUKA code for the interaction of 18.5 MeV/u uranium ion beam with thin carbon stripper of 1.3 μm). The benchmarking studies were also done to prove the yield calculation for 400 MeV/n {sup 131}Xe and other heavy ions. In this study, the benchmarking for Xe-C, Xe-Cu, Xe-Al, Xe-Pb and U-C, other interactions were performed using the FLUKA code. All of results show that the FLUKA can evaluate the heavy ion induced reaction with good uncertainty. For the evaluation of neutron source term, the calculated neutron yields are shown in Fig. 2. The energy of Uranium ion beam is only 18.5 MeV/u, but the energy of produced secondary neutrons was extended over 100 MeV. So the neutron shielding and the damage by those neutrons is expected to be serious. Because of thin stripper, the neutron intensity at forward direction was high. But the the intensity of produced secondary photons was relatively low and mostly the angular property was isotropic. For the detail shielding design of stripper section of RISP rare istope accelerator, the benchmarking study and preliminary evaluation of neutron source term from uranium beam have been carried out using the FLUKA code. This study is also compared with the evaluation results using the PHITS code performed coincidently. Both studies shows that two monte carlo codes can give a good results for

  17. Production of Oxidants by Ion Bombardment of Icy Moons in the Outer Solar System

    Directory of Open Access Journals (Sweden)

    Philippe Boduch

    2011-01-01

    Full Text Available Our groups in Brazil, France and Italy have been active, among others in the world, in performing experiments on physical-chemical effects induced by fast ions colliding with solids (frozen gases, carbonaceous and organic materials, silicates, etc. of astrophysical interest. The used ions span a very large range of energies, from a few keV to hundreds MeV. Here we present a summary of the results obtained so far on the formation of oxidants (hydrogen peroxide and ozone after ion irradiation of frozen water, carbon dioxide and their mixtures. Irradiation of pure water ice produces hydrogen peroxide whatever is the used ion and at different temperatures. Irradiation of carbon dioxide and water frozen mixtures result in the production of molecules among which hydrogen peroxide and ozone. The experimental results are discussed in the light of the relevance they have to support the presence of an energy source for biosphere on Europa and other icy moons in the outer Solar System.

  18. The influence of ion energy, target temperature, dose rate and crystal order on the shape of bombardment induced pyramids on copper crystals

    International Nuclear Information System (INIS)

    Tanovic, L.; Whitton, J.L.; Kofod, S.

    1978-01-01

    Following recent studies of energetic ion bombardment of copper, which established the conditions necessary for the production of cones/pyramids, investigations have been extended to include the effects of change in ion energy, target temperature and dose rate. In addition, the authors have attempted a detailed analysis of the influence of sample crystal orientation on the final form of pyramids and have investigated the stability of the pyramids as a function of the total dose. These experiments, as in earlier work, have been done using very pure copper, mass-analyzed ion beams and free of any metal contamination from, for example, defining apertures. (Auth.)

  19. Data on ionization, excitation, dissociation and dissociative ionization of targets by helium ion bombardments, (1)

    International Nuclear Information System (INIS)

    Oda, Nobuo; Urakawa, Junji

    1984-03-01

    This report presents a compilation of the experimental data on cross sections for the ionization, excitation, dissociation and dissociative ionization processes of targets in helium ion impacts on atoms and molecules under a single collision condition. These measurements were carried out in the energy range from several keV to 3.5 MeV. A systematic survey has been made on the literatures from 1975 to the end of 1982. A list of references is also given, including relevant papers published before 1975. (author)

  20. Moessbauer of phase separation in FeNi multilayers under ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, L.; Paesano, A.; Brueckman, M.E. [Rio Grande do Sul Univ., Porto Alegre, RS (Brazil). Inst. de Fisica; Scorzelli, R.B.; Dominguez, A.B. [Centro Brasileiro de Pesquisas Fisicas (CBPF), Rio de Janeiro, RJ (Brazil); Shinjo, T.; Ono, T.; Hosoito, N. [Kyoto Univ. (Japan). Inst. for Chemical Research

    1997-01-01

    We investigated the effect of noble gas irradiation (He, Ne, Ar and Xe) on the Fe-Ni multilayers with a very thin modulation and nominal composition in the invar region Fe{sub 0.63} Ni{sub 0.37}. The evaluation of the formation/stability of the Fe-Ni phases formed under irradiation with different ions and doses was followed by conversion electron Moessbauer spectroscopy (CEMS). (author). 21 refs., 4 figs., 2 tabs.; e-mail: scorza at novell.cat.cbpf.br.

  1. Study of beryllium redeposition under bombardment by high intensity -low energy- hydrogen ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Gureev, V.M.; Guseva, M.I.; Danelyan, L.S. [Russian Research Centre Kurchatov Inst., Moscow (Russian Federation)] [and others

    1998-01-01

    The results of studying the erosion of beryllium under an effect of intense ion fluxes with the energy of 250 eV, at the fluences {approx}10{sup 2}1 cm{sup -2}, at the MAGRAS-stand are given. The operating conditions under which a practically-complete redeposition of the sputtered beryllium upon the target surface were experimentally-realized. A change in the microstructure of a beryllium target under sputtering and redeposition is analyzed. Some technological applications are considered. (author)

  2. Silicide formation by Ar/sup +/ ion bombardment of Pd/Si

    Energy Technology Data Exchange (ETDEWEB)

    Lee, R Y; Whang, C N; Kim, H K; Smith, R J

    1988-08-01

    Palladium films, 45 nm thick, evaporated on to Si(111) were irradiated to various doses with 78 keV Ar/sup +/ ions to promote silicide formation. Rutherford backscattering spectroscopy (RBS) shows that intermixing has occurred across the Pd/Si interface at room temperature. The mixing behaviour is increased with dose which coincides well with the theoretical model of cascade mixing. The absence of deep RBS tails for palladium and the small area of this for silicon spectra indicate that short-range mixing occurs. From the calculated damage profiles computed with TRIM code, the dominant diffusion species is found to be silicon atoms in the Pd/Si system. It is also found that the initial compound formed by Ar/sup +/ irradiation is Pd/sub 2/Si which increases with dose. At a dose of 1 x 10/sup 16/ Ar/sup +/ cm/sup -2/, a 48 nm thickness of Pd/sub 2/Si was formed by ion-beam mixing at room temperature.

  3. Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering

    International Nuclear Information System (INIS)

    Rosen, Johanna; Widenkvist, Erika; Larsson, Karin; Kreissig, Ulrich; Mraz, Stanislav; Martinez, Carlos; Music, Denis; Schneider, J. M.

    2006-01-01

    The influence of ion energy on the hydrogen incorporation has been investigated for alumina thin films, deposited by reactive magnetron sputtering in an Ar/O 2 /H 2 O environment. Ar + with an average kinetic energy of ∼5 eV was determined to be the dominating species in the plasma. The films were analyzed with x-ray diffraction, x-ray photoelectron spectroscopy, and elastic recoil detection analysis, demonstrating evidence for amorphous films with stoichiometric O/Al ratio. As the substrate bias potential was increased from -15 V (floating potential) to -100 V, the hydrogen content decreased by ∼70%, from 9.1 to 2.8 at. %. Based on ab initio calculations, these results may be understood by thermodynamic principles, where a supply of energy enables surface diffusion, H 2 formation, and desorption [Rosen et al., J. Phys.: Condens. Matter 17, L137 (2005)]. These findings are of importance for the understanding of the correlation between ion energy and film composition and also show a pathway to reduce impurity incorporation during film growth in a high vacuum ambient

  4. Nucleation of diamond by pure carbon ion bombardment--a transmission electron microscopy study

    International Nuclear Information System (INIS)

    Yao, Y.; Liao, M.Y.; Wang, Z.G.; Lifshitz, Y.; Lee, S.

    2005-01-01

    A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 deg. C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht et al. [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model

  5. Nonlinear Amplitude Evolution During Spontaneous Patterning of Ion-Bombarded Si(001)

    International Nuclear Information System (INIS)

    Chason, Eric; Erlebacher, Jonah; Aziz, Michael J.; Floro, Jerold A.; Sinclair, Michael B.

    1999-01-01

    The time evolution of the amplitude of periodic nanoscale ripple patterns formed on Ar+ sputtered Si(OOl ) surfaces was examined using a recently developed in situ spectroscopic technique. At sufficiently long times, we find that the amplitude does not continue to grow exponentially as predicted by the standard Bradley-Harper sputter rippling model. In accounting for this discrepancy, we rule out effects related to the concentration of mobile species, high surface curvature, surface energy anisotropy, and ion-surface interactions. We observe that for all wavelengths the amplitude ceases to grow when the width of the topmost terrace of the ripples is reduced to approximately 25 nm. This observation suggests that a short circuit relaxation mechanism limits amplitude . growth. A strategy for influencing the ultimate ripple amplitude is discussed

  6. Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment

    Czech Academy of Sciences Publication Activity Database

    Lavrentiev, Vasyl; Vorlíček, Vladimír; Dejneka, Alexandr; Chvostová, Dagmar; Jäger, Aleš; Vacík, Jiří; Jastrabík, Lubomír; Naramoto, H.; Narumi, K.

    2013-01-01

    Roč. 98, SI (2013), s. 49-55 ISSN 0042-207X R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : energetic cluster s * silicon * surface modification * amorphization * nanostructure * Raman scattering * ion channeling Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.426, year: 2013 http://ac.els-cdn.com/S0042207X13001759/1-s2.0-S0042207X13001759-main.pdf?_tid=04e9c946-21dd-11e3-b076-00000aacb361&acdnat=1379672070_859355b2850a09ac74bc8ff413e35dda

  7. Application of alpha spectrometry to the discovery of new elements by heavy-ion-beam bombardment

    International Nuclear Information System (INIS)

    Nitschke, J.M.

    1983-05-01

    Starting with polonium in 1898, α-spectrometry has played a decisive role in the discovery of new, heavy elements. For even-even nuclei, α-spectra have proved simple to interpret and exhibit systematic trends that allow extrapolation to unknown isotopes. The early discovery of the natural α-decay series led to the very powerful method of genetically linking the decay of new elements to the well-established α-emission of daughter and granddaughter nuclei. This technique has been used for all recent discoveries of new elements including Z = 109. Up to mendelevium (Z = 101), thin samples suitable for α-spectrometry were prepared by chemical methods. With the advent of heavy-ion accelerators new sample preparation methods emerged. These were based on the large momentum transfer associated with heavy-ion reactions, which produced energetic target recoils that, when ejected from the target, could be thermalized in He gas. Subsequent electrical deposition or a He-jet technique yielded samples that were not only thin enough for α-spectroscopy, but also for α- and #betta#-recoil experiments. Many variations of these methods have been developed and are discussed. For the synthesis of element 106 an aerosol-based recoil transport technique was devised. In the most recent experiments, α-spectrometry has been coupled with the magnetic analysis of the recoils. The time from production to analysis of an isotope has thereby been reduced to 10 - 6 s; while it was 10 - 1 to 10 0 s for He-jets and 10 1 to 10 3 s for rapid chemical separations. Experiments are now in progress to synthesize super heavy elements (SHE) and to analyze them with these latest techniques. Again, α-spectrometry will play a major role since the expected signature for the decay of a SHE is a sequence of α-decays followed by spontaneous fission

  8. Formation of Amino Acid Precursors by Bombardment of Interstellar Ice Analogs with High Energy Heavy Ions

    Science.gov (United States)

    Kobayashi, Kensei; Mita, Hajime; Yoshida, Satoshi; Shibata, Hiromi; Enomoto, Shingo; Matsuda, Tomoyuki; Fukuda, Hitoshi; Kondo, Kotaro; Oguri, Yoshiyuki; Kebukawa, Yoko

    2016-07-01

    A wide variety of organic compounds have been detected in extraterrestrial bodies. It has been recognized that carbonaceous chondrites contain pristine amino acids [1]. There are several scenarios of the formation of such extraterrestrial amino acids or their precursors. Greenberg proposed a scenario that complex organic compounds were formed in interstellar ices in dense clouds, which were brought into solar system small bodies when the solar system was formed [2]. The ice mantles of interstellar dust particles (ISDs) in dense clouds are composed of H2O, CO, CH3OH, CH4, CO2, NH3, etc. In order to verify the scenario, a number of laboratory experiments have been conducted where interstellar ice analogs were irradiated with high-energy particles [3,4] or UV [5,6], and formation of complex organic compounds including amino acid precursors were detected in the products. Though ion-molecular reactions in gaseous phase and surface reactions on the ice mantles have been studied intensively, much less works on cosmic rays-induced reaction have been reported. In order to study possible formation of complex molecules in interstellar ices, frozen mixtures of water, methanol and ammonia with various mixing ratios were irradiated with high-energy heavy ions such as carbon ions (290 MeV/u) and neon ions (400 MeV/u) from HIMAC, NIRS, Japan. For comparison, gaseous mixtures of water, ammonia, carbon monoxide, carbon dioxide, and/or methane were irradiated with protons (2.5 MeV) from a Tandem accelerator, Tokyo Tech, Japan. Amino acids in the products were determined by cation exchange HPLC after acid hydrolysis. Products, both before and after acid hydrolysis, were also characterized by FT-IR and other techniques. Amino acids were detected in the hydrolyzed products after mixture of CH3OH, NH3 and H2O with various mixing ratios were irradiated with heavy ions, including when their mixing ratio was set close to the reported value of the interstellar ices (10:1:37). In the HIMAC

  9. CO dissociation and CO hydrogenation on smooth and ion-bombarded Pd(1 1 1): SFG and XPS spectroscopy at mbar pressures

    Science.gov (United States)

    Rupprechter, G.; Kaichev, V. V.; Unterhalt, H.; Morkel, M.; Bukhtiyarov, V. I.

    2004-07-01

    The CO dissociation probability on transition metals is often invoked to explain the product distribution (selectivity) of catalytic CO hydrogenation. Along these lines, we have investigated CO adsorption and dissociation on smooth and ion-bombarded Pd(1 1 1) at pressures up to 1 mbar using vibrational sum frequency generation (SFG) and X-ray photoelectron spectroscopy (XPS). Under high pressure, CO adsorbate structures were observed that were identical to high-coverage structures in UHV. On ion-bombarded surfaces an additional species was detected which was attributed to CO bridge bonded to defect (low-coordinated) sites. On both surfaces, no indications of CO dissociation were found even after hours of 0.1 mbar CO exposure. However, exposing CO/H 2 mixtures to ion-bombarded Pd(1 1 1) produced carbonaceous deposits suggesting CH xO species as precursors for CO bond cleavage and that the formation of CH xO is facilitated by surface defects. The relevance of the observations for CO hydrogenation on Pd catalysts is discussed.

  10. CO dissociation and CO hydrogenation on smooth and ion-bombarded Pd(1 1 1): SFG and XPS spectroscopy at mbar pressures

    Energy Technology Data Exchange (ETDEWEB)

    Rupprechter, G.; Kaichev, V.V.; Unterhalt, H.; Morkel, M.; Bukhtiyarov, V.I

    2004-07-31

    The CO dissociation probability on transition metals is often invoked to explain the product distribution (selectivity) of catalytic CO hydrogenation. Along these lines, we have investigated CO adsorption and dissociation on smooth and ion-bombarded Pd(1 1 1) at pressures up to 1 mbar using vibrational sum frequency generation (SFG) and X-ray photoelectron spectroscopy (XPS). Under high pressure, CO adsorbate structures were observed that were identical to high-coverage structures in UHV. On ion-bombarded surfaces an additional species was detected which was attributed to CO bridge bonded to defect (low-coordinated) sites. On both surfaces, no indications of CO dissociation were found even after hours of 0.1 mbar CO exposure. However, exposing CO/H{sub 2} mixtures to ion-bombarded Pd(1 1 1) produced carbonaceous deposits suggesting CH{sub x}O species as precursors for C---O bond cleavage and that the formation of CH{sub x}O is facilitated by surface defects. The relevance of the observations for CO hydrogenation on Pd catalysts is discussed.

  11. Directional effect on coloration in LiF crystal by H{sup +} and H{sub 2}{sup +} ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Mingle, Gan; Naramoto, Hiroshi; Aoki, Yasushi; Yamamoto, Shunya; Jianer, Zeng; Takeshita, Hidefumi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    In the present paper, the first results are reported about the coloration in LiF crystals induced by bombardments of single hydrogen ions (H{sup +}) and molecular hydrogen ions (H{sub 2}{sup +}) with the same velocity under the <100> aligned and random conditions. For the single hydrogen ion irradiation, the coloration is rather simple. The F-type color center absorption under the <100> aligned condition becomes larger than that under the random condition with the dose increase because of larger fraction of electronic energy loss under channeling condition. On the contrary, the coloration for the molecular ions does not show big channeling effect. In the low dose region some difference can be seen but the difference of coloration is not observed any more with the dose increase. The pronounced coloration for molecular ions under the channeling condition is observed in comparison with that for single ions. (author)

  12. Influence of ion bombardment on structural and electrical properties of SiO2 thin films deposited from O2/HMDSO inductively coupled plasmas under continuous wave and pulsed modes

    International Nuclear Information System (INIS)

    Bousquet, A.; Goullet, A.; Leteinturier, C.; Granier, A.; Coulon, N.

    2008-01-01

    Low pressure Plasma Enhanced Chemical Vapour Deposition is commonly used to deposit insulators on temperature sensitive substrates. In these processes, the ion bombardment experienced by films during its growth is known to have benefits but also some disadvantages on material properties. In the present paper, we investigate the influence of this bombardment on the structure and the electrical properties of SiO 2 -like film deposited from oxygen/hexa-methyl-di-siloxane radiofrequency plasma in continuous and pulsed modes. First, we studied the ion kinetics thanks to time-resolved measurements by Langmuir probe. After, we showed the ion bombardment in such plasma controls the OH bond content in deposited films. Finally, we highlight the impressive reduction of fixed charge and interface state densities in films obtained in pulsed mode due to a lower ion bombardment. (authors)

  13. Experimental and theoretical studies of bombardment induced surface morphology changes

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Williams, J.S.

    1980-01-01

    In this review results of experimental and theoretical studies of solid surface morphology changes due to ion bombardment are discussed. An attempt is undertaken to classify the observed specific features of a structure, generated by ion bombardment [ru

  14. Vacancy production in molybdenum by low energy light ion bombardment: computer simulation

    International Nuclear Information System (INIS)

    Hou, M.; Veen, A. van; Caspers, L.M.; Ypma, M.R.

    1983-01-01

    A comparison is made of the room temperature vacancy production measured with THDS (thermal helium desorption spectrometry) and the Frenkel pair production calculated in the binary collision approximation with MARLOWE for 0.5 to 3 keV He + ions and 1.5 keV protons injected into a Mo(110) crystal. Using the distributions of Frenkel pair separation distances calculated with MARLOWE for various values of the displacement threshold Esub(d), the experimental data are matched by selecting a cut-off radius Rsub(c) so that for separations larger than Rsub(c) the Frenkel pairs survive recombination. It became apparent that all experimental data could be reasonably described by a pair of parameters Esub(d) = 33 eV and Rsub(c) = 3.7 a 0 (a 0 is the lattice cell edge unit). The value of Esub(d) we found is close to the experimentally determined threshold energy for permanent displacements in Mo. A detailed analysis of the recombination process using the MARLOWE results shows that the found cut-off radius corresponds with an effective recombination radius Rsub(o) = 2.8 a 0 . In the literature lower (theoretical) values of Rsub(o) = 1.4 - 2.1 a 0 are quoted for correlated recombination of single Frenkel pairs in molybdenum. (orig.)

  15. L-subshell ionization studies in Au and Bi for 19F and 28Si large-ion bombardment

    International Nuclear Information System (INIS)

    Padhi, H.C.; Dhal, B.B.; Nanal, V.; Prasad, K.G.; Tandon, P.N.; Trautmann, D.

    1996-01-01

    L x-ray production and subshell ionization cross sections of Au and Bi have been measured for the bombardment of 19 F and 28 Si ions in the energy range 30 endash 57 MeV and 36 endash 84 MeV, respectively. Comparison of the Lα x-ray production cross sections of Au with the earlier data by Malhi and Gray [Phys. Rev. A 44, 7199 (1991)] shows reasonable agreement for 19 F impact and their data are consistently higher for 28 Si at all energies. The measured Lα line energy shows a shift towards higher energy, which appears to be proportional to the square of the projectile atomic number at all impact energies. This shift suggests the presence of multiple ionization in the L and M shells with a simultaneous production of four M holes in Au at the impact energy of 3 MeVu -1 of 28 Si. The L-subshell ionization cross sections obtained from the measured x-ray production cross sections have been compared with the semiclassical approximation and perturbed stationary state theory with energy loss, Coulomb deflection, and relativistic correction for the electron motion calculations, which show large deviations for the L 1 subshell. The L 2 - and L 3 -subshell ionization cross sections are underestimated by both the theories by a factor of 1.2 endash 4.0 for 28 Si impact whereas for the 19 F case there is reasonable agreement for the L 3 cross section but the L 2 cross section is underestimated by 20 endash 30%. copyright 1996 The American Physical Society

  16. Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment

    Science.gov (United States)

    Grodzicki, M.; Mazur, P.; Ciszewski, A.

    2018-05-01

    The p-GaN(0 0 0 1) crystal with a relatively low acceptor concentration of 5 × 1016 cm-3 is used in these studies, which are carried out in situ under ultrahigh vacuum (UHV) by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). The p-GaN(0 0 0 1)-(1 × 1) surface is achieved by thermal cleaning. N+-ion bombardment by a 200 eV ion beam changes the surface stoichiometry, enriches it with nitrogen, and disorders it. Such modified surface layer inverts its semiconducting character from p- into n-type. The electron affinity for the already cleaned p-GaN surface and that just after bombardment shows a shift from 2.2 eV to 3.2 eV, as well as an increase of band bending at the vacuum/surface interface from 1.4 eV to 2.5 eV. Proper post-bombardment heating of the sample restores the initial atomic order of the modified layer, leaving its n-type semiconducting character unchanged. The results of the measurements are discussed based on two types of surface states concepts.

  17. Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions

    Directory of Open Access Journals (Sweden)

    Xinghao Liang

    2018-02-01

    Full Text Available Silicon carbide (SiC is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors.

  18. Distributions of neutron yields and doses around a water phantom bombarded with 290-MeV/nucleon and 430-MeV/nucleon carbon ions

    Energy Technology Data Exchange (ETDEWEB)

    Satoh, D., E-mail: satoh.daiki@jaea.go.jp [Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Kajimoto, T. [Hiroshima University, Kagamiyama, Higashi-Hiroshima-shi, Hiroshima 739-8527 (Japan); Shigyo, N.; Itashiki, Y.; Imabayashi, Y. [Kyushu University, Motooka, Nishi-ku, Fukuoka 819-0395 (Japan); Koba, Y.; Matsufuji, N. [National Institute of Radiological Sciences, Anagawa, Inage-ku, Chiba 263-8555 (Japan); Sanami, T. [High Energy Accelerator Research Organization, Oho-cho, Tsukuba-shi, Ibaraki 305-0801 (Japan); Nakao, N. [Shimizu Corporation, Etchujima, Koto-ku, Tokyo 135-8530 (Japan); Uozumi, Y. [Kyushu University, Motooka, Nishi-ku, Fukuoka 819-0395 (Japan)

    2016-11-15

    Double-differential neutron yields from a water phantom bombarded with 290-MeV/nucleon and 430-MeV/nucleon carbon ions were measured at emission angles of 15°, 30°, 45°, 60°, 75°, and 90°, and angular distributions of neutron yields and doses around the phantom were obtained. The experimental data were compared with results of the Monte-Carlo simulation code PHITS. The PHITS results showed good agreement with the measured data. On the basis of the PHITS simulation, we estimated the angular distributions of neutron yields and doses from 0° to 180° including thermal neutrons.

  19. Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

    International Nuclear Information System (INIS)

    Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

    1975-01-01

    Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

  20. Energy dependence of Lα-to-Ll x-ray intensity ratios for Yb and Pb produced by heavy-ion bombardment

    International Nuclear Information System (INIS)

    Gray, T.J.

    1980-01-01

    Measurements of the incident-ion energy dependence of Lα-to-Ll x-ray intensity ratios are reported for protons incident at 0.40 to 2.20 MeV/amu on thin targets of Pb and for 4 He and C ions incident upon Yb. The data are compared to calculations of the Lα-to-Ll ratio which include the effects of alignment of the 2p/sub 3/2/ state of the target

  1. Electronic structure of incident carbon ions on a graphite surface

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Takeuchi, Takae; Yamamoto, Masao.

    1997-01-01

    The electronic structure of an incident carbon ion on a graphite surface is discussed on the basis of ab initio molecular orbital calculations. A carbon cation forms a covalent bond with the graphite, and a carbon nonion is attracted to the graphite surface through van der Waals interaction. A carbon anion has no stable state on a graphite surface. The charge effects of incident ions become clear upon detailed examination of the electronic structure. (author)

  2. Incident ion charge state dependence of electron emission during slow multicharged ion-surface interactions

    International Nuclear Information System (INIS)

    Hughes, I.G.; Zeijlmans van Emmichoven, P.A.; Havener, C.C.; Overbury, S.H.; Robinson, M.T.; Zehner, D.M.; Meyer, F.W.

    1992-01-01

    Characteristic variations in the total electron yield γ as a function of crystal azimuthal orientation are reported for slow N 2+ , N 5+ and N 6+ ions incident on a Au(011) single crystal, together with measurements of γ as a function of incident ion velocity. Kinetic electron emission is shown to arise predominantly in close collisions between incident ions and target atoms, and potential electron emission is found to be essentially constant within our present velocity range. The incident ion charge state is shown to play no role in kinetic electron emission. Extremely fast neutralization times of the order of 10 - 15 secs are needed to explain the observations

  3. Nanoconstructive bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, J [VSW Ion Beam Systems, Warrington (UK)

    1990-06-01

    Ion beams with energies as low as a few eV can be used, in the very clean environment of an ultra-high vacuum system, to achieve the fine control for atomic-scale experiments. They are becoming widely used in nanotechnology. Recent advances in beam quality, overcoming the mutual repulsion of the ions, have meant that mass-analysed low energy ion beams have been developed around the world for a variety of applications in material science, and physics. The structure of such devices is outlined and possible future applications noted. (U.K.).

  4. Formation mechanism and yield of molecules ejected from ZnS, CdS, and FeS2 during ion bombardment

    International Nuclear Information System (INIS)

    Nikzad, S.; Calaway, W.F.; Pellin, M.J.; Young, C.E.; Gruen, D.M.; Tombrello, T.A.

    1994-01-01

    Neutral species ejected from single crystals of ZnS, CdS, and FeS 2 during ion bombardment by 3 keV Ar + were detected by laser post-ionization followed by time-of-flight mass spectrometry. While metal atoms (Fe, Zn, Cd) and S 2 were the dominant species observed, substantial amounts of S, FeS, Zn 2 , ZnS, Cd 2 , and CdS were also detected. The experimental results demonstrate that molecules represent a larger fraction of the sputtered yield than was previously believed from secondary ion mass spectrometry experiments. In addition, the data suggest that the molecules are not necessarily formed from adjacent atoms in the solid and that a modified form of the recombination model could provide a mechanism for their formation

  5. Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ion

    International Nuclear Information System (INIS)

    Gerlach-Meyer, U.; Coburn, J.W.; Kay, E.

    1981-01-01

    There are many examples of situations in which a gas-surface reaction rate is increased when the surface is simultaneously subjected to energetic particle bombardment. There are several possible mechanisms which could be involved in this radiation-enhanced gas-surface chemistry. In this study, the reaction rate of silicon, as determined from the etch yield, is measured during irradiation of the Si surface with 1 keV He + , Ne + , and Ar + ions while the surface is simultaneously subjected to fluxes of XeF 2 or Cl 2 molecules. Etch yields as high as 25 Si atoms/ion are observed for XeF 2 and Ar + on Si. A discussion is presented of the extent to which the results clarify the mechanisms responsible for ion-enhanced gas-surface chemistry. (orig.)

  6. Materials surface modification by plasma bombardment under simultaneous erosion and redeposition conditions

    International Nuclear Information System (INIS)

    Hirooka, Y.; Goebel, D.M.; Conn, R.W.

    1986-07-01

    The first in-depth investigation of surface modification of materials by continuous, high-flux argon plasma bombardment under simultaneous erosion and redeposition conditions have been carried out for copper and 304 stainless steel using the PISCES facility. The plasma bombardment conditions are: incident ion flux range from 10 17 to 10 19 ions sec -1 cm -2 , total ion fluence is controlled between 10 19 and 10 22 ions cm -2 , electron temperature range from 5 to 15 eV, and plasma density range from 10 11 to 10 13 cm -3 . The incident ion energy is 100 eV. The sample temperature is between 300 and 700K. Under redeposition dominated conditions, the material erosion rate due to the plasma bombardment is significantly smaller (by a factor up to 10) than that can be expected from the classical ion beam sputtering yield data. It is found that surface morphologies of redeposited materials strongly depend on the plasma bombardment condition. The effect of impurities on surface morphology is elucidated in detail. First-order modelings are implemented to interpret the reduced erosion rate and the surface evolution. Also, fusion related surface properties of redeposited materials such as hydrogen reemission and plasma driven permeation have been characterized

  7. Desorption of Cs+ ions with fast incident atomic and molecular ions

    International Nuclear Information System (INIS)

    Salehpour, M.; Hunt, J.E.; Tou, L.C.; Hedin, A.; Sundqvist, B.

    1988-01-01

    Preliminary results on desorption yield measurements of secondary Cs + ions, desorbed as a result of the impact of C + , O + , CO + , O 2 + , CO 2 + and C 4 H 9 + incident ions, in the energy range of 950 keV--3.5 MeV are presented. Molecular beams are found to give high yields of secondary Cs + as a result of impact of O 2 + compared to O + incident ions, indicate no ''collective'' molecular effects. 23 refs., 1 fig

  8. Ion emission in solids bombarded with Aun+ (n = 1 - 9) clusters accelerated within the 0.15 - 1.25 MeV energy range

    International Nuclear Information System (INIS)

    Wehbe, Nimer

    2006-06-01

    This experimental work is devoted to the study of the ion emission in solids at the impact of gold clusters of energies within 0.15 to 1.25 MeV range. The physics of ion-solid collisions and the theoretical models of sputtering of solids under ion bombardment are presented in the first chapter. The chapter no. 2 deals with the description of the experimental setup. The study of a gold target allowed to evidence the role of the size and energy of the clusters in determining the emission intensity and the mass distribution of the ions. The 4. chapter gives results from the study of cesium iodide in which the intense emission of CsI clusters could be investigated quantitatively due to multiplicity measurements. Finally, the chapter no. 5 was devoted to the study of a biologic molecule, the phenylalanine, and of a pesticide molecule, chlorosulfuron. This work evidenced the importance of clusters for surface analyses by mass spectrometry

  9. Si(LMM) Auger electron emission from Si alloys by keV Ar/sup +/ ion bombardment, new effect and application

    Energy Technology Data Exchange (ETDEWEB)

    Hiraki, A; Kim, S; Imura, T; Iwami, M [Osaka Univ., Suita (Japan). Faculty of Engineering

    1979-09-01

    Si(LMM) Auger spectra excited by keV ion bombardment were studied in Si alloyed with several elements (Au, Cu, Pd, Ni, C, and H). The spectra differed completely from those of pure Si. The main characteristics are (1) the spectra are composed of two well-separated peaks (88 and 92 eV) called the atomic-like peak (88 eV) and the bulk-like peak (92 eV); and (2) the atomic-like peak is enhanced with respect to the bulk-like peak, and this enhancement becomes more obvious as the concentration of partner elements of the alloys are increased. The possible application of the present phenomena is proposed as a technique for detecting the homogeneity of Si alloy films in the three-dimensional sense - as an example, the three-dimensional distribution of hydrogen in hydrogenated amorphous silicon (a-Si-H).

  10. Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

    Science.gov (United States)

    Beainy, Georges; Cerba, Tiphaine; Bassani, Franck; Martin, Mickaël; Baron, Thierry; Barnes, Jean-Paul

    2018-05-01

    Time of flight secondary ion mass spectrometry (ToF-SIMS) is a well-adapted analytical method for the chemical characterization of concentration profiles in layered or multilayered materials. However, under ion beam bombardment, initially smooth material surface becomes morphologically unstable. This leads to abnormal secondary ion yields and depth profile distortions. In this contribution, we explore the surface topography and roughening evolution induced by O2+ ion bombardment on GaSb/InAs multilayers. We demonstrate the formation of nanodots and ripples patterning according to the ion beam energy. Since the latter are undesirable for ToF-SIMS analysis, we managed to totally stop their growth by using simultaneously sample rotation and oxygen flooding. This unprecedented coupling between these two latter mechanisms leads to a significant enhancement in depth profiles resolution.

  11. Measurement of ion species produced due to bombardment of 450 eV N{sub 2}{sup +} ions with hydrocarbons-covered surface of tungsten: Formation of tungsten nitride

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Bhatt, P. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, A. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Singh, B.K.; Singh, B.; Prajapati, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Shanker, R., E-mail: shankerorama@gmail.com [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India)

    2016-08-01

    A laboratory experiment has been performed to study the ions that are produced due to collisions of 450 eV N{sub 2}{sup +} ions with a hydrocarbons-covered surface of polycrystalline tungsten at room temperature. Using a TOF mass spectrometry technique, the product ions formed in these collisions have been detected, identified and analyzed. Different ion–surface reaction processes, namely, neutralization, reflection, surface induced dissociation, surface induced chemical reactions and desorption are observed and discussed. Apart from the presence of desorbed aliphatic hydrocarbon and other ions, the mass spectra obtained from the considered collisions show the formation and sputtering of tungsten nitride (WN). A layer of WN on tungsten surface is known to decrease the sputtering of bulk tungsten in fusion devices more effectively than when the tungsten is bombarded with other seeding gases (He, Ar). It is further noted that there is a negligible diffusion of N in the bulk tungsten at room temperature.

  12. Doubly versus Singly Positively Charged Oxygen Ions Back-Scattering from a Silicon Surface under Dynamic O2+ Bombardment

    Czech Academy of Sciences Publication Activity Database

    Franzreb, K.; Williams, P.; Lörinčík, Jan; Šroubek, Zdeněk

    203-204, 1/4 (2003), s. 39-42 ISSN 0169-4332 Institutional research plan: CEZ:AV0Z2067918; CEZ:AV0Z4040901 Keywords : low-energy ion scattering * doubly charged ions * molecular orbital Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.284, year: 2003

  13. Secondary emission from a CuBe target due to bombardment with parent and fragment ions of ammonia and phosphine

    International Nuclear Information System (INIS)

    Maerk, T.D.

    1977-01-01

    The secondary electron emission of the first dynode of a CuBe alloy sixteen dynode electron multiplier has been studied in the course of electron impact ionization studies of ammonia and phosphine. Relative secondary electron emission coefficients have been obtained for the singly and doubly charged parent and fragment ions of ammonia, ammonia-d 3 , phosphine and phosphine-d 3 for kinetic energies of 5,25 and 10,5 keV. It has been found, that in general deuterated ions have smaller γ coefficients, that ammonia ions have larger γ coefficients than corresponding phosphine ions, and that the γ coefficients increase with the complexity of the ion under study. (Auth.)

  14. Evolution of porous network in GaSb under normally incident 60 keV Ar{sup +}-ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Datta, D.P. [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Gautam Budh Nagar 203 207, Uttar Pradesh (India); Garg, S.K. [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India); Sahoo, P.K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751 005, Odisha (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Kanjilal, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India)

    2014-08-15

    Highlights: • We show the evolution of a nanoporous layer in GaSb under Ar{sup +}-ion bombardment at normal incidence in the hitherto unexplored high fluence regime, namely 7 × 10{sup 16}–3 × 10{sup 18} ions cm{sup −2}. • Fluence dependent formation and growth of patches on top of the nanoporous layer is demonstrated by scanning electron microscopy. • We also show high amount of oxidation of such ion-beam-generated nanoporous structures, with formation of Ga{sub 2}O{sub 3} and Sb{sub 2}O{sub 3}. • Our study reveals the presence of nanocrystallites within the porous layer even at the highest fluence used in the experiment. • We interpret the experimental observations through a qualitative model where we take into account the effect of re-deposition of atoms sputtered from the nanoporous layer during Ar{sup +}-ion irradiation of GaSb. - Abstract: GaSb(1 0 0) samples were irradiated with 60 keV Ar{sup +}-ions at normal incidence for fluences in the range of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} at room temperature, showing gradual evolution of a porous surface layer containing interconnected nanofibers. In particular, fluence dependent formation of patches on the nanoporous layer is observed by scanning electron microscopy. Combined results of grazing incidence x-ray diffraction and transmission electron microscopy reveal the presence of nanocrystallites in the porous structures. Compositional analysis by x-ray photoelectron spectroscopy indicates the development of oxide phases, mainly Ga{sub 2}O{sub 3} and Sb{sub 2}O{sub 3} where the former increases with fluence. We have proposed a model addressing a competition between ion-induced-defect driven growth of the nanoporous layer and redeposition of sputtered target atoms on the growing layer.

  15. Secondary ion emission from cleaned surfaces bombarded by 100 MeV accelerator beams at the GSI Darmstadt

    International Nuclear Information System (INIS)

    Wien, K.; Becker, O.; Guthier, W.; Knippelberg, W.; Koczon, P.

    1988-01-01

    The 1.4 MeV/n beam facility for the UNILAC/GSI has been used to study secondary ion emission from surfaces cleaned under UHV conditions by ion etching or cleaving of crystals. The desorption phenomena observed by means of TOF mass spectrometry can be classified as follows: (1) Clean metal surfaces emit metal ions being ejected by atomic collisions cascades. Electronic excitation of surface states seems to support ionization. (2) The desorption of contaminants adsorbed at the metal surface is strongly correlated with the electronic energy loss of the projectiles - even, if the content of impurities is very low. (3) Ion formation at the epitaxial surface of fluoride crystals as CaF 2 , MgF 2 and NaF is initiated by the electronic excitation of the crystal. At high beam energies the mass spectrum is dominated by a series of cluster ions. These cluster ions disappear below a certain energy deposit threshold, whereas small atomic ions are observed over the whole energy range

  16. Net sputtering rate due to hot ions in a Ne-Xe discharge gas bombarding an MgO layer

    International Nuclear Information System (INIS)

    Ho, S.; Tamakoshi, T.; Ikeda, M.; Mikami, Y.; Suzuki, K.

    2011-01-01

    An analytical method is developed for determining net sputtering rate for an MgO layer under hot ions with low energy ( h i , above a threshold energy of sputtering, E th,i , multiplied by a yield coefficient. The threshold energy of sputtering is determined from dissociation energy required to remove an atom from MgO surface multiplied by an energy-transfer coefficient. The re-deposition rate of the sputtered atoms is calculated by a diffusion simulation using a hybridized probabilistic and analytical method. These calculation methods are combined to analyze the net sputtering rate. Maximum net sputtering rate due to the hot neon ions increases above the partial pressure of 4% xenon as E h Ne becomes higher and decreases near the partial pressure of 20% xenon as ion flux of neon decreases. The dependence due to the hot neon ions on partial pressure and applied voltage agrees well with experimental results, but the dependence due to the hot xenon ions deviates considerably. This result shows that the net sputtering rate is dominated by the hot neon ions. Maximum E h Ne (E h Ne,max = 5.3 - 10.3 eV) is lower than E th,Ne (19.5 eV) for the MgO layer; therefore, weak sputtering due to the hot neon ions takes place. One hot neon ion sputters each magnesium and each oxygen atom on the surface and distorts around a vacancy. The ratio of the maximum net sputtering rate is approximately determined by number of the ions at E h i,max multiplied by an exponential factor of -E th,i /E h i,max .

  17. Effect of radical species density and ion bombardment during ashing of extreme ultralow-κ interlevel dielectric materials

    International Nuclear Information System (INIS)

    Worsley, M. A.; Bent, S. F.; Fuller, N. C. M.; Tai, T. L.; Doyle, J.; Rothwell, M.; Dalton, T.

    2007-01-01

    The significance of ion impact and radical species density on ash-induced modification of an extreme ultralow-κ interlevel dielectric (ILD) material (κ 2 and Ar/N 2 dual frequency capacitive discharges is determined by combining plasma diagnostics, modeling of the ion angular distribution function, and material characterization such as angle resolved x-ray photoelectron spectroscopy. Radical species density was determined by optical emission actinometry under the same conditions and in the same reactor in a previous study by the present authors. ILD modification is observed and correlated with changes in the plasma for a range of pressures (5-60 mTorr), bias powers (0-350 W), and percent Ar in the source gas (0%, 85%). For the Ar/O 2 discharge, extensive modification of the ILD sidewall was observed for significant ion scattering conditions, whereas minimal modification of the ILD sidewall was observed under conditions of minimal or no ion scattering. Further, for an identical increase in the O-radical density (∼ an order of magnitude), a different degree of modification was induced at the ILD trench bottom surface depending on whether pressure or percent Ar was used to increase the radical density. The different degrees of modification seemingly correlated with the relative changes in the ion current for increasing pressure or percent Ar. For the Ar/N 2 discharge, reduced damage of the ILD sidewall and trench bottom surfaces was observed for increasing pressure (increasing N-radical density) and decreasing ion current to both surfaces. It is, thus, proposed that the mechanism for modification of the porous ILD is dominated by the creation of reactive sites by ion impact under the present conditions. A detailed discussion of the results which support this proposal is presented

  18. Graphite irradiated by swift heavy ions under grazing incidence

    CERN Document Server

    Liu, J; Müller, C; Neumann, R

    2002-01-01

    Highly oriented pyrolytic graphite is irradiated with various heavy projectiles (Ne, Ni, Zn, Xe and U) in the MeV to GeV energy range under different oblique angles of incidence. Using scanning tunneling microscopy, the impact zones are imaged as hillocks protruding from the surface. The diameter of surface-grazing tracks varies between 3 nm (Ne) and 6 nm (U), which is about twice as large as under normal beam incidence. Exclusively for U and Xe projectiles, grazing tracks exhibit long comet-like tails consisting of successive little bumps indicating that the damage along the ion path is discontinuous even for highest electronic stopping powers.

  19. Damage of niobium surfaces caused by bombardment with 4He+ ions of different energies typical for T-20

    International Nuclear Information System (INIS)

    Guseva, M.I.; Gusev, V.; Martynenko, Yu.V.; Das, S.K.; Kaminsky, N.

    1979-01-01

    The surface damage of cold worked and annealed polycrystalline Nb irradiated at room temperature with He + ions sequentially at different energies over the range from 0.5 keV to 1.8 MeV has been investigated. The individual energy and the dose of the He + ion was chosen to match the theoretically calculated He + ion spectrum expected in the Tokamak T-20. In one set of irradiations, targets were irradiated at Kurchatov Institute starting with 0.5 keV 4 He + ions and extending up to 90 keV in eleven steps. Subsequently, the same area was irradiated at ANL starting at 150 keV and increased in eight steps up to 1.8 MeV. The irradiations were carried out for a total dose of 5.0 C/cm 2 . In another set of irradiations the sequence was reversed. Scanning electron microscopy results show formation of blisters and exfoliation. For the same dose the broad energy implant (due to sequential irradiation) appears to decrease the blister diameter and density as compared to irradiation with monoenergetic He + ions at a given energy (in the energy range considered). Some estimates of surface erosion yields due to blistering are given

  20. Coupling of morphology to surface transport in ion-beam-irradiated surfaces: normal incidence and rotating targets

    International Nuclear Information System (INIS)

    Munoz-Garcia, Javier; Cuerno, Rodolfo; Castro, Mario

    2009-01-01

    Continuum models have proved their applicability to describe nanopatterns produced by ion-beam sputtering of amorphous or amorphizable targets at low and medium energies. Here we pursue the recently introduced 'hydrodynamic approach' in the cases of bombardment at normal incidence, or of oblique incidence onto rotating targets, known to lead to self-organized arrangements of nanodots. Our approach stresses the dynamical roles of material (defect) transport at the target surface and of local redeposition. By applying results previously derived for arbitrary angles of incidence, we derive effective evolution equations for these geometries of incidence, which are then numerically studied. Moreover, we show that within our model these equations are identical (albeit with different coefficients) in both cases, provided surface tension is isotropic in the target. We thus account for the common dynamics for both types of incidence conditions, namely formation of dots with short-range order and long-wavelength disorder, and an intermediate coarsening of dot features that improves the local order of the patterns. We provide for the first time approximate analytical predictions for the dependence of stationary dot features (amplitude and wavelength) on phenomenological parameters, that improve upon previous linear estimates. Finally, our theoretical results are discussed in terms of experimental data.

  1. Characterization of carbon contamination under ion and hot atom bombardment in a tin-plasma extreme ultraviolet light source

    NARCIS (Netherlands)

    Dolgov, A.; Lopaev, D.; Lee, Christopher James; Zoethout, E.; Medvedev, Viacheslav; Yakushev, O.; Bijkerk, Frederik

    2015-01-01

    Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV) lithography was experimentally studied. A carbon film was found to have grown under irradiation from a pulsed tin plasma discharge. Our studies show that the film is chemically inert and has characteristics that

  2. Role of Ion Bombardment, Film Thickness and Temperature of Annealing on PEC Activity of Very-thin Film Hematite .

    Czech Academy of Sciences Publication Activity Database

    Kment, Š.; Čada, M.; Hubička, Z.; Krýsa, J.; Kmentová, Hana; Olejníček, J.; Zlámalová Cílová, Z.; Zbořil, R.

    2016-01-01

    Roč. 41, č. 27 (2016), s. 11547-11557 ISSN 0360-3199. [International Conference on Hydrogen Energy /1./. Aveiro, 20.07.2015-22.07.2015] Institutional support: RVO:67985858 Keywords : ion flux density * hematite photoanode * thin films Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.582, year: 2016

  3. Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

    2011-12-15

    The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

  4. Neutron radiation field due to 6.6 MeV/amu 58Ni ions bombarding a thick Cu target

    International Nuclear Information System (INIS)

    Aleinikov, V.E.; Cherevatenko, A.P.; Clapier, F.B.; Tsovbun, V.I.

    1985-01-01

    The angular distribution of the dose equivalent rate and neutron spectra were obtained using the Bonner sphere spectrometry method. The quality factor was measured by a tissue-equivalent Rem-2 chamber at several angles. The agreement between the results of the measurements and an empirical parameterisation of the angular distribution is satisfactory. The total yield is estimated to be 1.6+-0.4x10 -3 neutrons per heavy ion. (author)

  5. Damage of niobium surfaces caused by bombardment with 4He+ ions of different energies typical for T-20

    International Nuclear Information System (INIS)

    Guseva, M.I.; Gusev, V.; Martynenko, Yu.V.; Das, S.K.; Kaminsky, M.

    1979-01-01

    The aim of the present studies was to study surface damage due to blistering of both annealed and cold-worked niobium (a candidate first wall material for keV) irradiated sequentially with 4 He + ions with energies of 0.5 to 1800 keV for a total dose of 5.0 C/cm 2 . A typical surface of cold-worked Nb after irradiations with 4 He + ions with increasing energy from 0.5 to 90 keV is shown. The blister diameters range from 0.1 μm to 3 μm, and most of the blisters have exfoliated. The blisters fall into several size classes, the two most dominant ones having most probable blister diameters of approx. 0.27 μm and approx. 2.0 μm. The skin thickness of the larger blisters was measured to be approx. 0.23 μm. Also shown is the same area after irradiation with 150-1800-keV 4 He + irradiation for a dose of 0.66 C/cm 2 . A few additional blisters can be seen. A cold-worked Nb surface that was irradiated only with 150-1800-keV 4 He + ions is also shown. It is seen that prior irradiation with 0.5-90-keV 4 He + helped in significantly reducing blistering. For a total dose of 0.5 C/cm 2 , the erosion yield due to helium blistering of Nb ranges from (5.4 +- 2.0) x 10 -3 to (1.5 +- 0.7) x 10 -2 atoms/ion. For the cold-worked Nb target the results indicate clearly that the 4 He + implantations for the energy range from 0.5 to 90 keV help to reduce both the density and diameter of blisters formed by subsequent He-implantation for the energy ranging from 150 to 1800 keV. 2 figures

  6. Comments on Auger electron production by Ne/sup +/ bombardment of surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Pepper, S V; Ferrante, J [National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center

    1979-09-01

    In this letter, the authors first report rather conclusive experimental evidence showing that the Ne Auger signal is due to asymmetric Ne-metal collisions and not symmetric Ne-Ne collisions. Next it is shown that the Ne Auger signal is in fact observable by Ne/sup +/ bombardment of Si and with signal strength comparable to that of the Si Auger signal for 3 keV incident ion energy. Finally, they comment on some trends in the relative amplitudes of the 21.9 and 25.1 eV Ne Auger signals as a function of incident ion energy and target species.

  7. Disordering and amorphization of Zr3Al by 3.8 MeV Zr3+ ion bombardment

    International Nuclear Information System (INIS)

    Chen, F.C.; Ardell, A.J.

    1991-01-01

    The ordered intermetallic compound Zr 3 Al was irradiated with 3. 8 MeV Zr 3+ ions at various fluences up to 5 x 10 12 tons/mm 2 at a temperature of 250 degrees C and the irradiation- induced microstructures were investigated by transmission electron microscopy. Disordering began at the lowest dose, 0.0033 dpa, and complete loss of chemical long-range order occurred at a dose of 0.33 dpa. The onset of amorphization was also observed at this dose. Electron diffraction patterns from irradiated samples showed satellite reflections along in thin foils in [100] orientation and streaking along in foils oriented [011]. These diffraction effects are attributed to the presence of irradiation-induced microstructural defects that, when imaged in dark field, resemble rows of dislocation loops. A model of these arrays of loops, which are suggested to have Burgers vectors of the Frank type, is proposed. The model accounts for the contrast effects observed in the images and the streaking and satellites seen in the diffraction patterns. At the highest dose, 1.6 dpa, a new phase, Zr 5 Al 3 , appeared unexpectedly, most likely as a consequence of irradiation-induced solute segregation

  8. Computer simulation and data compilation of sputtering yield by hydrogen isotopes ({sup 1}H{sup +}, {sup 2}D{sup +}, {sup 3}T{sup +}) and helium ({sup 4}He{sup +}) ion impact from monatomic solids at normal incidence

    Energy Technology Data Exchange (ETDEWEB)

    Yamamura, Yasunori; Sakaoka, Kazuho; Tawara, Hiro

    1995-10-01

    The ion-induced sputtering yields from monatomic solids at normal incidence are presented graphically for light-ion ({sup 1}H{sup +}, {sup 2}D{sup +}, {sup 3}T{sup +}, {sup 4}He{sup +}) bombardment on various target materials as a function of the incident ion energy. To supplement the experimental data, the sputtering yields are calculated by the Monte Carlo simulation code ACAT for all possible light ion-target combinations. Each graph shows the available experimental and ACAT data points, together with the sputtering yield calculated by the Yamamura and Tawara empirical formula. (author).

  9. Experimental study of secondary ion emission from bombarded surfaces by heavy ions at nucleon energy between 0.1 and 5 MeV/u

    International Nuclear Information System (INIS)

    Lorthiois, I.

    1983-03-01

    A time of flight mass spectrometer associated with 252 Cf has been built in the laboratory and used to identify organic and biological molecules. A few number of examples is shown. The complex interaction processes between primary ions and several kinds of materials can be more easily studied by using heavy ions from an accelerator. The mass of the primary ions, its velocity and its state charge are known parameters wich can be varied in these experiments. The desorption yields have been measured simultaneously with other parameters (velocity of the primary ions, number of emitted electrons). The velocity dependance of the yield shows the existence of a maximum around 1 cm/ns and no direct correlations have been found between the yield curves and the electronic stopping power (dE/dx). Experimental results are presented for several types of primary ions (Cu, Kr, Ag) and of material deposits [fr

  10. Ion desorption from solid surfaces under slow (KeV) and fast (MeV) ion sputtering. Influence of the charge state and of the incidence angle on the input channel

    International Nuclear Information System (INIS)

    Joret, H.

    1990-06-01

    Solid surfaces of organic and inorganic materials have been bombarded by fast heavy ions (several MeV). It is shown that the charge state of the projectile has a strong influence on the atomic and molecular ion desorption yield. Experimental studies proved that molecular ions can be emitted intact from deep layers underneath the surface (volume emission) with the existence of a crater emission. On the other hand light ions like H(+), H(+)-2, H(+)-3 are emitted from the surface of the solid in a time around 10 -16 second. The H(+) depends on the incident charge state g-i. When using slow ions (keV) the same dependence was observed for the first time and compared to the fast ion results. The equilibrum charge state of fast ions passing through solids was measured. The influence of the angle of incidence was investigated. Langmuir-Blodgett films of fatty acid were used. A geometrical model is developed for the 50 angstroms layer [fr

  11. Heavy-ion induced desorption yields of amorphous carbon films bombarded with 4.2 MeV/u lead ions

    CERN Document Server

    Mahner, E; Küchler, D; Scrivens, R; Costa Pinto, P; Yin Vallgren, C; Bender, M

    2011-01-01

    During the past decade, intense experimental studies on the heavy-ion induced molecular desorption were performed in several particle accelerator laboratories worldwide in order to understand and overcome large dynamic pressure rises caused by lost beam ions. Different target materials and various coatings were studied for desorption and mitigation techniques were applied to heavy-ion accelerators. For the upgrade of the CERN injector complex, a coating of the Super Proton Synchrotron (SPS) vacuum system with a thin film of amorphous carbon is under study to mitigate the electron cloud effect observed during SPS operation with the nominal proton beam for the Large Hadron Collider (LHC). Since the SPS is also part of the heavy-ion injector chain for LHC, dynamic vacuum studies of amorphous carbon films are important to determine their ion induced desorption yields. At the CERN Heavy Ion Accelerator (LINAC 3), carbon-coated accelerator-type stainless steel vacuum chambers were tested for desorption using 4.2 Me...

  12. Study of the secondary electron emission during bombardment of metal targets by positive D{sup +} and D{sub 2}{sup +} ions (1960); Etude de l'emission secondaire d'electrons au cours du bombardement de cibles metalliques par des ions positifs D{sup +} et D{sub 2}{sup +} (1960)

    Energy Technology Data Exchange (ETDEWEB)

    Leroy, J [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires; Prelec, K [Institut Rudjer Boskovic, Zagreb (Croatia)

    1960-07-01

    The secondary electron yield {gamma}-bar due to primary positive ions D{sup +} and D{sup +}{sub 2} has been measured in the 70 keV to 300 keV ion energy range. Several metallic targets have been used. The variation of this yield with the angle of incidence is proportional to sec {theta} where {theta} is the angle between the beam of primary ions and the normal to the target surface. The values {gamma}-bar decrease for increasing energy ions. At a given energy all the targets tried gave approximately the same electron yield. (author) [French] Le facteur d'emission secondaire a ete mesure pour des ions positifs D{sup +} et D{sup +}{sub 2} ayant une energie comprise entre 70 keV et 300 keV, sur differentes cibles metalliques. La variation de ce facteur avec l'angle d'incidence suit une loi de la forme {gamma}{sub 0} sec {theta}, {theta} etant l'angle entre le faisceau et la normale a la cible. Les valeurs de {gamma}-bar trouvees decroissent lorsque l'energie des ions incidents augmente, mais sont assez voisines les unes des autres, a une energie donnee, pour les differentes cibles essayees. (auteur)

  13. Secondary ion emission from ultra-thin oxide layers bombarded by energetic (MeV) heavy ions: depth of origin and layer homogeneity

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Cabaud, B.; Fuchs, G.; Hoareau, A.; Treilleux, M.; Danel, J.S.

    1993-09-01

    The escape depth of the secondary ions resulting from electronic sputtering of fast heavy ions in inorganic thin films has been investigated. Chromium layers deposited onto SiO 2 substrate as well as SiO x layers deposited onto chromium substrate have been characterized by secondary ion emission mass spectrometry (SIMS) in combination with time-of-flight (TOF) mass analysis (also referred as HSF-SIMS). These crossed experiments lead to a value around 1 nm for SiO x layers and 0.5 nm for Cr layers. On the other hand, HSF-SIMS can be used to correlate the intensity of the secondary ion emission to the film coverage rate and (or) the morphology of particular films like those produced by Low Energy Cluster Beam Deposition (LECBD). Using Sb deposits, the non-linear relationship between ion emission and coverage is interpreted in terms of sputtering enhancement in the individual supported clusters. (author) 22 refs., 9 figs., 1 tab

  14. Collisional effects on ion energy and angular distributions incident on RF-biased electrodes

    International Nuclear Information System (INIS)

    Qiu Huatan; Wang Younian; Ma Tengcai

    2002-01-01

    Taking into account elastic collisions and charge-exchange collisions between ions and neutral particles, the authors established a self-consistent model describing the dynamics of radio-frequency (RF) sheath driven by a sinusoidal current source, and also, using the Monte-Carlo Method, simulated energy and angle distributions of ions bombarding on RF-biased substrates. It has been shown from numerical results that as increasing the discharge pressure, bimodal-peaks distributions for the ion energy become gradually a single-peak distribution, and low-energy ions increase. The authors also found that the angle distribution of ions is narrow and almost do not change with increasing the discharge pressure

  15. Experimental study on the secondary emission (atomic and molecular ions, aggregates, electrons) induced by the bombardment of surfaces by means of energetic heavy ions (∼ MeV/u). Effects of the charge state of the projectiles

    International Nuclear Information System (INIS)

    Monart, B.

    1988-05-01

    The ionic and electronic emissions, induced by the sputtering of solid targets (organic and inorganic) with 1 MeV/u projectiles. The time-of-flight spectrometry is applied to the secondary emission analysis. The projectile velocity, the angle of attack (between the beam and the target), and the projectile's incident charge state, are taken into account. It is shown that the secondary emission depends on the charge of the incident ion and on the charge state changement in the material's bulk. A model, applying the theoretical calculations concerning the charge in the material's bulk, is proposed. The existence of an interaction depth, for the incident ion and the material, which depends on the secondary ions type and on the incident ion charge, is suggested. The calculated depth is about 200 angstroms for the aggregates ejected from a CsI target, sputtered with 14 Kr 18+ . The H + yield (coming from ∼ 10 angstroms) is used as a projectile charge probe, at the material surface. The experimental method allows, for the first time, the obtention of the equilibrium charge state in the condensed matter. The same method is applied to determine the non-equilibrium charges in the bulk of thin materials. The results show that, after leaving the material, the projectile presents a post-ionization state [fr

  16. Using MDECR-PECVD to study the impact of ion bombardment energy on microstructural properties of μc-Si:H thin film grown from an SiF{sub 4}/H{sub 2} chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junkang; Florea, Ileana; Bulkin, Pavel V.; Maurice, Jean-Luc; Johnson, Erik V. [LPICM, CNRS, Ecole Polytechnique, Universite Paris Saclay, 91128 Palaiseau (France)

    2016-12-15

    The matrix-distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition (MDECR-PECVD) technique has been shown to achieve high deposition rates for hydrogenated microcrystalline silicon (μc-Si:H) thin film. Due to the fact that plasma is sustained by a microwave discharge, by biasing the substrate holder with additional power supply, one can achieve independent control over the plasma density and the maximum ion bombardment energy (IBE). In this work, we present studies of the impact of IBE on the microstructural properties of the μc-Si:H film deposited by MDECR-PECVD. Insufficient ion bombardment is found to be responsible for the substantial presence of nano-porous regions within the material, resulting in significant post-deposition oxidation. Good agreement between transmission electron microscopy (TEM) Fresnel contrast analysis and the results of infrared absorption and hydrogen effusion measurements for the deposited films suggest that moderate IBE is of vital importance to achieve high quality μc-Si:H. In doing so, denser films with significantly decreased nano-porous regions and better stability are obtained, which is of great interest to optimize the process parameters for solar cell applications. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles

    International Nuclear Information System (INIS)

    Sekowski, M.; Burenkov, A.; Martinez-Limia, A.; Hernandez-Mangas, J.; Ryssel, H.

    2008-01-01

    Angular distributions of ion sputtered germanium and silicon atoms are investigated within this work. Experiments are performed for the case of grazing ion incidence angles, where the resulting angular distributions are asymmetrical with respect to the polar angle of the sputtered atoms. The performed experiments are compared to Monte-Carlo simulations from different programs. We show here an improved model for the angular distribution, which has an additional dependence of the ion incidence angle.

  18. Desorption of organic molecules with fast incident atomic and polyatomic ions

    International Nuclear Information System (INIS)

    Hunt, J.E.; Salehpour, M.; Fishel, D.L.

    1989-01-01

    In 1974, Macfarlane and coworkers introduced a new mass spectrometric technique based on desorption-ionization of sample molecules from solid targets by the impact of fast heavy ions (fission fragments) from 252 Cf. The process of ion-induced desorption of molecular ions from surfaces is not yet fully understood, although a large amount of experimental data related to the mechanism has been published. This paper concerns the use of fast incident polyatomic ions to induce desorption of secondary molecular ions of valine and chlorophyll from surfaces. Polyatomic ions are unique in that they are a collection of temporally and spatially correlated atoms. The main finding in this study is that incident polyatomic ions produce drastic enhancements in the secondary ion yields over atomic ions. Also, two types of nonlinear effects in desorption have been observed and will be discussed

  19. Collisions of polyatomic ions with surfaces: incident energy partitioning and chemical reactions

    International Nuclear Information System (INIS)

    Zabka, J.; Roithova, J.; Dolejsek, Z.; Herman, Z.

    2002-01-01

    Collision of polyatomic ions with surfaces were investigated in ion-surface scattering experiments to obtain more information on energy partitioning in ion-surface collision and on chemical reactions at surfaces. Mass spectra, translation energy and angular distributions of product ions were measured in dependence on the incident energy and the incident angle of polyatomic projectiles. From these data distributions of energy fractions resulting in internal excitation of the projectile, translation energy of the product ions, and energy absorbed by the surface were determined. The surface investigated were a standard stainless steel surface, covered by hydrocarbons, carbon surfaces at room and elevated temperatures, and several surfaces covered by a self-assembled monolayers (C 12 -hydrocarbon SAM, C 11 -perfluorohydrocarbon SAM, and C 11 hydrocarbon with terminal -COOH group SAM). The main processes observed at collision energies of 10 - 50 eV were: neutralization of the ions at surfaces, inelastic scattering and dissociations of the projectile ions, quasi elastic scattering of the projectile ions, and chemical reactions with the surface material (usually hydrogen-atom transfer reactions). The ion survival factor was estimated to be a few percent for even-electron ions (like protonated ethanol ion, C 2 H 5 O + , CD 5 + ) and about 10 - 10 2 times lower for radical ions (like ethanol and benzene molecular ions, CD 4 + ). In the polyatomic ion -surface energy transfer experiments, the ethanol molecular ion was used as a well-characterized projectile ion. The results with most of the surfaces studied showed in the collision energy range of 13 - 32 eV that most collisions were strongly inelastic with about 6 - 8 % of the incident projectile energy transformed into internal excitation of the projectile (independent of the incident angle) and led partially to its further dissociation in a unimolecular way after the interaction with the surface. The incident energy

  20. Energy dependence of ion-induced sputtering yields from monoatomic solids at normal incidence

    International Nuclear Information System (INIS)

    Yamamura, Yasunori; Tawara, Hiro.

    1995-03-01

    The yields of the ion-induced sputtering from monoatomic solids at normal incidence for various ion-target combinations are presented graphically as a function of the incident ion energy. In order to fill the lack of the experimental data, the sputtering yields are also calculated by the Monte Carlo simulation code ACAT for some ion-target combinations. Each graph shows available experimental data points and the ACAT data, together with the sputtering yields calculated by the present empirical formula, whose parameters are determined by the best-fit to available data. (author)

  1. Angular distributions of particles sputtered from polycrystalline platinum by low-energy ions

    International Nuclear Information System (INIS)

    Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

    2000-01-01

    The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 3-9 keV Ne + bombardment at normal ion incidence are presented. It was found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of an ion energy. Comparison with the previously obtained data for He + and Ar + ions have shown that the shape of the angular distribution does not depend on the bombarding ion species. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for Ne ion bombardment were performed and the comparison with corresponding data for He and Ar bombarding was made. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

  2. Monte Carlo calculations of ligth-ion sputtering as a function of the incident angle

    International Nuclear Information System (INIS)

    Haggmark, L.G.; Biersack, J.P.

    1980-01-01

    The sputtering of metal surfaces by light ions has been studied as a function of the incident angle using an extension of the TRIM Monte Carlo computer program. Sputtering yields were calculated at both normal and oblique angles of incidence for H, D, T, and 4 He impinging on Ni, Mo, and Au targets with energies <= 10 keV. Direct comparisons are made with the most recent experimental and theoretical results. There is generally good agreement with the experimental data although our calculated maximum in the yield usually occurs at a smaller incident angle, measured from the surface normal. The enhancement of the yield at large incident angles over that at normal incidence is observed to be a complex function of the incident ion's energy and mass and the target's atomic weight and surface binding energy. (orig.)

  3. Charge equilibrium processes of energetic incident ions and their range

    International Nuclear Information System (INIS)

    Kawagoshi, Hiroshi; Karashima, Shosuke; Watanabe, Tsutomu.

    1984-01-01

    The charge state of energetic ions passing through a certain matter is varied by charge-exchange processes. A rate equation for charge fraction is given by using electron loss and capture cross sections in collision with a target atom under idealized condition. We solved the rate equation of the charge-exchange process of a single electron in a form of linear coupled differential equation. Our calcuiation for the range of ion were carried out for He, Ne and Ar ions passing through an atomic hydrogen gas target. We discuss the charge states of the projectile in relation to a local charge balance consituting a state of charge equilibrium in the target. (author)

  4. Ionization by ion impact at grazing incidence on insulator surface

    CERN Document Server

    Martiarena, M L

    2003-01-01

    We have calculated the energy distribution of electrons produced by ionization of the ionic crystal electrons in grazing fast ion-insulator surface collision. The ionized electrons originate in the 2p F sup - orbital. We observe that the binary peak appears as a double change in the slope of the spectra, in the high energy region. The form of the peak is determined by the initial electron distribution and its position will be affected by the binding energy of the 2p F sup - electron in the crystal. This BEP in insulator surfaces will appear slightly shifted to the low energy side with respect the ion-atom one.

  5. Anomalous behavior in temporal evolution of ripple wavelength under medium energy Ar{sup +}-ion bombardment on Si: A case of initial wavelength selection

    Energy Technology Data Exchange (ETDEWEB)

    Garg, Sandeep Kumar [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India); Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Cuerno, Rodolfo [Departamento de Matematicas and Grupo Interdisciplinar de Sistemas Complejos (GISC), Universidad Carlos III de Madrid, 28911 Leganes (Spain); Kanjilal, Dinakar [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Som, Tapobrata, E-mail: tsom@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)

    2016-06-14

    We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of 1–3 × 10{sup 18} ions cm{sup −2}, as induced by medium energy Ar{sup +}-ion irradiation at room temperature. Under our experimental conditions, the ripple evolution is found to be in the linear regime, while a clear decreasing trend in the ripple wavelength is observed up to a certain time (fluence). Numerical simulations of a continuum model of ion-sputtered surfaces suggest that this anomalous behavior is due to the relaxation of the surface features of the experimental pristine surface during the initial stage of pattern formation. The observation of this hitherto unobserved behavior of the ripple wavelength seems to have been enabled by the use of medium energy ions, where the ripple wavelengths are found to be order(s) of magnitude larger than those at lower ion energies.

  6. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    Energy Technology Data Exchange (ETDEWEB)

    Siekhaus, W. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Teslich, N. E. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Weber, P. K. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

  7. Guiding of slow Ne7+ ions through nanocapillaries in insulating polyethylene terephthalate: Incident current dependence

    International Nuclear Information System (INIS)

    Stolterfoht, N.; Hellhammer, R.; Bundesmann, J.; Fink, D.; Kanai, Y.; Kambara, T.; Ikeda, T.; Hoshino, M.; Yamazaki, Y.

    2007-01-01

    The transmission of highly charged ions through nanocapillaries in insulating polyethylene terephthalate (PET) polymers was investigated. In experiments at laboratories in RIKEN (Japan) and HMI (Germany) different detection methods were applied to study the ion current dependence in a wide range covering two orders of magnitude. At HMI an electrostatic ion spectrometer was used and at RIKEN a two-dimensional position sensitive detector was implemented. New PET samples with parallel capillaries and low density were manufactured. For tilted capillaries, the ions are guided along the capillary axis, since the majority of ions are deflected in a charge patch created in the capillary entrance. The results provide insights into the mechanisms of capillary guiding. The fraction of transmitted ions was found to be nearly independent on the incident ion current indicating a sudden increase in the discharge current depleting the entrance charge patch. The experimental results were well-reproduced by model calculations based on a nonlinear (exponential) expression for the discharge current

  8. Ranges, Reflection and Secondary Electron Emission for keV Hydrogen Ions Incident on Solid N2

    DEFF Research Database (Denmark)

    Børgesen, P.; Sørensen, H.; Hao-Ming, Chen

    1983-01-01

    Ranges were measured for 0.67–3.3 keV/amu hydrogen and deuterium ions in solid N2. Comparisons with similar results for N2-gas confirm the previously observed large phase effect in the stopping cross section. Measurements of the secondary electron emission coefficient for bulk solid N2 bombarded...... by 0.67–9 keV/amu ions also seem to support such a phase effect. It is argued that we may also extract information about the charge state of reflected projectiles....

  9. Surface damage through grazing incidence ions investigated by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Redinger, Alex

    2009-01-01

    Surface damage, caused by grazing incidence ions, is investigated with variable temperature scanning tunneling microscopy. The experiments are carried out on a Pt(111) crystal. The kinetic energy of noble gas ions is varied between 1-15 keV and the angle of incidence can be adjusted between θ = 78.5 and θ = 90 measured with respect to the surface normal. The damage patterns of single ion impacts, on flat terraces and at step edges of monoatomic height, are investigated at low surface temperatures. Ions hitting a flat terrace are usually specular reflected. The energy transfer from the ion to the crystal atoms is small and only little damage is produced. In contrast, at ascending step edges, which are illuminated by the ion beam, large angle scattering events occur. Sputtering, adatom and vacancy production is induced. However, a significant fraction of the ions, which hit step edges, enter the crystal and are guided in between two atomic layers parallel to the surface via small angle binary collisions. This steering process is denoted as subsurface channeling. The energy loss per length scale of the channeled particles is low, which results in long ion trajectories (up to 1000A). During the steering process, the ions produce surface damage. Depending on the ion species and the ion energy, adatom and vacancies or surface vacancy trenches of monoatomic width are observed. The surface damage can be used to track the path of the ion. This makes the whole trajectory of single ions with keV energy visible. The number of sputtered atoms per incident ion at ascending step edges, i.e. the step edge sputtering yield, is measured experimentally for different irradiation conditions. For θ = 86 , the sputtering yield is determined from the fluence dependent retraction of pre-existing illuminated step edges. An alternative method for the step edge sputtering yield determination, is the analysis of the concentration of ascending steps and of the removed amount of material as a

  10. Surface damage through grazing incidence ions investigated by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Redinger, Alex

    2009-07-10

    Surface damage, caused by grazing incidence ions, is investigated with variable temperature scanning tunneling microscopy. The experiments are carried out on a Pt(111) crystal. The kinetic energy of noble gas ions is varied between 1-15 keV and the angle of incidence can be adjusted between {theta} = 78.5 and {theta} = 90 measured with respect to the surface normal. The damage patterns of single ion impacts, on flat terraces and at step edges of monoatomic height, are investigated at low surface temperatures. Ions hitting a flat terrace are usually specular reflected. The energy transfer from the ion to the crystal atoms is small and only little damage is produced. In contrast, at ascending step edges, which are illuminated by the ion beam, large angle scattering events occur. Sputtering, adatom and vacancy production is induced. However, a significant fraction of the ions, which hit step edges, enter the crystal and are guided in between two atomic layers parallel to the surface via small angle binary collisions. This steering process is denoted as subsurface channeling. The energy loss per length scale of the channeled particles is low, which results in long ion trajectories (up to 1000A). During the steering process, the ions produce surface damage. Depending on the ion species and the ion energy, adatom and vacancies or surface vacancy trenches of monoatomic width are observed. The surface damage can be used to track the path of the ion. This makes the whole trajectory of single ions with keV energy visible. The number of sputtered atoms per incident ion at ascending step edges, i.e. the step edge sputtering yield, is measured experimentally for different irradiation conditions. For {theta} = 86 , the sputtering yield is determined from the fluence dependent retraction of pre-existing illuminated step edges. An alternative method for the step edge sputtering yield determination, is the analysis of the concentration of ascending steps and of the removed amount

  11. Radial dose distribution from carbon ion incident on liquid water

    International Nuclear Information System (INIS)

    Scifoni, E.; Surdutovich, E.; Solov'yov, A.V.; Surdutovich, E.

    2010-01-01

    We report calculations of the radial dose deposited along carbon-ion tracks in liquid water using different techniques depending on the energy range of secondary electrons. The models are developed in relation with the experimental data on electron penetration lengths. For electrons with energies higher than 45 eV, we use the Katz model. However, the main focus is on the low-energy electrons, which are largely responsible for DNA damage within 10 nm from the tracks. For these electrons, the dose calculation is based on their random walk behaviour. The results of this combined approach are compared to experimental measurements. Contributions to the deposited energy by electrons of different ranges of energy are discussed. (authors)

  12. Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes

    Science.gov (United States)

    Alvi, Naveed Ul Hassan; Hussain, Sajjad; Jensen, Jen; Nur, Omer; Willander, Magnus

    2011-12-01

    Light-emitting diodes (LEDs) based on zinc oxide (ZnO) nanorods grown by vapor-liquid-solid catalytic growth method were irradiated with 2-MeV helium (He+) ions. The fabricated LEDs were irradiated with fluencies of approximately 2 × 1013 ions/cm2 and approximately 4 × 1013 ions/cm2. Scanning electron microscopy images showed that the morphology of the irradiated samples is not changed. The as-grown and He+-irradiated LEDs showed rectifying behavior with the same I-V characteristics. Photoluminescence (PL) measurements showed that there is a blue shift of approximately 0.0347 and 0.082 eV in the near-band emission (free exciton) and green emission of the irradiated ZnO nanorods, respectively. It was also observed that the PL intensity of the near-band emission was decreased after irradiation of the samples. The electroluminescence (EL) measurements of the fabricated LEDs showed that there is a blue shift of 0.125 eV in the broad green emission after irradiation and the EL intensity of violet emission approximately centered at 398 nm nearly disappeared after irradiations. The color-rendering properties show a small decrease in the color-rendering indices of 3% after 2 MeV He+ ions irradiation.

  13. Tribological properties of nc-TiC/a-C:H coatings prepared by magnetron sputtering at low and high ion bombardment of the growing film

    Czech Academy of Sciences Publication Activity Database

    Souček, P.; Schmidtová, T.; Bursíková, V.; Vašina, P.; Pei, Y.; De Hos, J. Th. M.; Caha, O.; Peřina, Vratislav; Mikšová, Romana; Malinský, Petr

    2014-01-01

    Roč. 241, FEB (2014), s. 64-73 ISSN 0257-8972 R&D Projects: GA MŠk(XE) LM2011019; GA ČR(CZ) GD104/09/H080 Institutional support: RVO:61389005 Keywords : nanocomposites * magnetron sputtering * Titanium carbide * ion flux * friction * wear Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.998, year: 2014

  14. Nucleation and growth of defects in heavy-ion and electron-bombarded metals. Final report for the period ending February 29, 1980

    International Nuclear Information System (INIS)

    Kulcinski, G.L.

    1983-04-01

    He preinjection was found to be essential in nucleating voids in high-purity Al. Interstitial pickup in high-purity V was found to be important even under good vacuum (10 - 6 to 10 - 7 torr). Voids were found to form in V down to 200 0 C. A model was tested against rdiation disordering/ordering in Cu 3 Au. Disordering in CuPd was studied. A small negative heavy ion source (SNICS) was developed for the tandem accelerator

  15. Analytical evaluation for the sputtering yield of monoatomic solids at normal ion incidence

    International Nuclear Information System (INIS)

    Shao Qiyun; Pan Zhengying

    1994-01-01

    A universal formula of sputtering yield for normal incidence of mono-energetic ions on single element targets is presented. The results based on this method are compared with the Monte Carlo simulation and the experimental data. By means of Wilcoxon two-sample paired signed rank test, the statistically significant difference of the above results is discussed

  16. Diffusion processes in bombardment-induced surface topography

    International Nuclear Information System (INIS)

    Robinson, R.S.

    1984-01-01

    A treatment is given of the problem of surface diffusion processes occurring during surface topography development, whenever a surface is simultaneously seeded with impurities and ion bombarded. The development of controllable topography and the importance of surface diffusion parameters, which can be obtained during these studies, are also analyzed. 101 refs.; 7 figs.; 2 tabs

  17. Advances in fast-atom-bombardment mass spectroscopy

    International Nuclear Information System (INIS)

    Hemling, M.E.

    1986-01-01

    A comparison of fast atom bombardment and field desorption mass spectrometry was made to determine relative sensitivity and applicability. A series of glycosphingolipids and a series of protected oligonucleotides of known structure were analyzed to ascertain the potential utility of fast atom bombardment mass spectrometry in the structural elucidation of novel compounds in these classes. Negative ion mass markers were also developed. Fast atom bombardment was found to be one-to-two orders of magnitude more sensitive than field desorption based on the analysis of a limited number of compounds from several classes. Superior sensitivity was not universal and field desorption was clearly better in certain cases. In the negative ion mode in particular, fast atom bombardment was found to be a useful tool for the determination of the primary structure of glycosphingolipids and oligonucleotides. Carbohydrate sequence and branching information, and a fatty acid and lipid base composition were readily obtained from the mass spectra of glycosphingolipids while bidirectional nucleotide sequence, nucleotide base, and protecting group assignments were obtained for oligonucleotides. Based on this knowledge, a tentative structure of a human peripheral nervous system glycosphingolipid implicated in certain cases of disorders such as amyotrophic lateral sclerosis, Lou Gehrig's Disease, was proposed. Suitable negative ion mass markers were found in dispersions of poly(ethylene) and poly(propylene)glycols in a triethylenetetramine matrix, a matrix which also proved useful in the analysis of glycosphingolipids. These polyglycol dispersions provided ions for calibration to 2300 daltons

  18. Fast atom bombardment mass spectrometry of condensed tannin sulfonate derivatives

    Science.gov (United States)

    J.J. Karchesy; L.Y. Foo; Richard W. Hemingway; E. Barofsky; D.F. Barofsky

    1989-01-01

    Condensed tannin sulfonate derivatives were studied by fast atom bombardment mass spectrometry (FAB-MS) to assess the feasibility of using this technique for determining molecular weight and structural information about these compounds. Both positive- and negative-ion spectra provided useful data with regard to molecular weight, cation species present, and presence of...

  19. Ion-induced desorption from stainless-steel vacuum chambers has been studied with a view to improving the dynamic pressure in the future LEIR ion accumulator ring for the LHC.

    CERN Multimedia

    Brice Maximilien

    2002-01-01

    This picture shows part of a vacuum chamber fully equipped with St707 non-evaporable getter (NEG) strips which were bombarded in Linac3 with lead ions at 4.2 MeV/u. A change of the surface morphology is visible where the Pb53+ ions impacted under grazing incidence onto the NEG.

  20. Process heat exchanger for SO3 decomposer fabricated with Ni-based alloys surface modified by SiC film deposition and N ion beam bombardment

    International Nuclear Information System (INIS)

    Park, Jae-Won; Kim, Hyung-Jin; Choi, Yong-Woon; Kim, Yong-Wan

    2007-01-01

    In the iodine-sulfur (IS) cycle for the hydrogen production using the high temperature gas-cooled reactor (HTGR), one of the important components is the SO 3 decomposer which generates SO 2 and SO 3 gases under high temperature conditions. Since this environment is extremely corrosive, the materials used for the decomposer should meet excellent mechanical properties at the elevated temperature as well as high corrosion resistance in SO 2 /SO 3 atmospheres. In general, ceramics are protective against the corrosion, but metals exhibit limited corrosion resistance. In this work, the ceramic coating on the metallic substrate was studied. We selected SiC as coating materials and Ni-based alloys as the substrate materials. Since the adhesion between the coated layer and the substrate is most crucial in this application, we attempted to develop Ion Beam Mixing (IBM) technique to produce a highly adherent coated layer. For the fabrication of process heat exchange for SO 3 decomposer, the diffusion bonding at ∼900 .deg. C is employed because this temperature does not affect the mechanical properties of materials

  1. Continuum modeling of ion-beam eroded surfaces under normal incidence: Impact of stochastic fluctuations

    International Nuclear Information System (INIS)

    Dreimann, Karsten; Linz, Stefan J.

    2010-01-01

    Graphical abstract: Deterministic surface pattern (left) and its stochastic counterpart (right) arising in a stochastic damped Kuramoto-Sivashinsky equation that serves as a model equation for ion-beam eroded surfaces and is systematically investigated. - Abstract: Using a recently proposed field equation for the surface evolution of ion-beam eroded semiconductor target materials under normal incidence, we systematically explore the impact of additive stochastic fluctuations that are permanently present during the erosion process. Specifically, we investigate the dependence of the surface roughness, the underlying pattern forming properties and the bifurcation behavior on the strength of the fluctuations.

  2. Electron emission induced by resonant coherent ion-surface interaction at grazing incidence

    International Nuclear Information System (INIS)

    Garcia de Abajo, F.J.; Ponce, V.H.; Echenique, P.M.

    1992-01-01

    A new spectroscopy based on the resonant coherently induced electron loss to the continuum in ion-surface scattering under grazing incidence is proposed. A series of peaks, corresponding to the energy differences determined by the resonant interaction with the rows of atoms in the surface, is predicted to appear in the energy distribution of electrons emitted from electronic states bound to the probe. Calculations for MeV He + ions scattered at a W(001) surface along the left-angle 100 right-angle direction with a glancing angle of 0--2 mrad show a total yield close to 1

  3. Diagnosis by proton bombardment

    International Nuclear Information System (INIS)

    Steward, V.W.; Koehler, A.M.

    1976-01-01

    Beams of monoenergetic protons or other charged ions are passed through the living human body to detect abnormalities and obstructions in body tissue, which abnormalities and obstructions are visualized as density variations in the particle image emerging from the body part under investigation. The particles used are preferably protons having an energy of 100 to 300 MeV, more especially 200 to 300 MeV. The method is of use in detecting inter alia tumors, blood clots, infarcts, soft tissue lesions and multiple sclerosis in patients without exposure to high radiation dosages. 6 claims, 2 drawing figures

  4. Proper surface channelling of low energy argon ions incident on a nickel (110) crystal

    International Nuclear Information System (INIS)

    Evdokimov, I.N.; Berg, J.A. van den; Armour, D.G.

    1979-01-01

    The scattering behaviour of 6 keV argon ions from a nickel (110) surface has been investigated for specular reflection under grazing incidence conditions. The occurrence of an anomalously high energy loss has been confirmed and the transition from chain scattering at large scattering angles to a distinctly different type of scattering at small angles has been investigated. The characteristics of the low angle scattering phenomena, which dominate the observed spectra at scattering angles below about 18 0 , may be explained in terms of a surface hyperchannelling model in which the incident ions are confined to move within the shallow 'potential valleys' between two atomic rows in the surface. The critical angle for occurrence of this phenomena which is distinctly different from surface semichannelling has been evaluated with Lindhard's standard string potential. The experimentally measured critical angles are in good agreement with the calculated ones. (author)

  5. Orientation-dependent ion beam sputtering at normal incidence conditions in FeSiAl alloy

    International Nuclear Information System (INIS)

    Batic, Barbara Setina; Jenko, Monika

    2010-01-01

    The authors have performed Ar+ broad ion beam sputtering of a polycrystalline Fe-Si-Al alloy at normal incidence at energies varying from 6 to 10 keV. Sputtering results in the formation of etch pits, which can be classified in three shapes: triangular, rectangular, and square. As each grain of individual orientation exhibits a certain type of pattern, the etch pits were correlated with the crystal orientations by electron backscattered diffraction technique.

  6. Sputtering mechanisms of polycrystalline platinum by low energy ions

    International Nuclear Information System (INIS)

    Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

    1999-01-01

    The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 1.5-9 keV He + bombardment at the normal ion incidence are presented. It has been found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of the bombarding ion species and ion energy. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for He and Ar bombardments were performed. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

  7. Secondary Electron Emission from Solid Hydrogen and Deuterium Resulting from Incidence of keV Electrons and Hydrogen Ions

    DEFF Research Database (Denmark)

    Sørensen, H.

    1977-01-01

    are small, in contrast to what is expected for insulating materials. One explanation is that the secondary electrons lose energy inside the target material by exciting vibrational and rotational states of the molecules, so that the number of electrons that may escape as secondary electrons is rather small....... The losses to molecular states will be largest for hydrogen, so that the SEE coefficients are smallest for solid hydrogen, as was observed. For the incidence of ions, the values of δ for the different molecular ions agree when the number of secondary electrons per incident atom is plotted versus the velocity...... or the stopping power of the incident particles. Measurements were also made for oblique incidence of H+ ions on solid deuterium for angles of incidence up to 75°. A correction could be made for the emission of secondary ions by also measuring the current calorimetrically. At largest energies, the angular...

  8. Single capture and transfer ionization in collisions of Clq+ projectile ions incident on helium

    International Nuclear Information System (INIS)

    Wong, K.L.; Ben-Itzhak, I.; Cocke, C.L.; Giese, J.P.; Richard, P.

    1995-01-01

    The Kansas State University linac has been used to measure the ratio of the cross sections for the processes of transfer ionization (TI) and single capture (SC) for 2 MeV/amu Cl q+ where q=7, 9, 13, 14, and 15 projectile ions incident on a helium target. The ratio was determined using a helium gas jet target by measuring coincidences between projectile-ion and recoil-ion final charge states. The σ TI /σ SC for Cl q+ were compared to measurements of bare F 9+ and hydrogenlike F 8+ and O 7+ taken at the same velocity. The ratios deviate from a q 2 scaling which is predicted in the perturbative regime. This deviation is attributed to screening by the projectile electrons for low q=7 and 9, and to the collision being non-perturbative for high q. A possible saturation effect in the ratio was observed for q similar 14. (orig.)

  9. Diffusion processes in bombardment-induced surface topography

    International Nuclear Information System (INIS)

    Robinson, R.S.

    1984-01-01

    The bombardment of surfaces with moderate energy ions can lead to the development of various micron-sized surface structures. These structures include ridges, ledges, flat planes, pits and cones. The causal phenomena in the production of these features are sputtering, ion reflection, redeposition of sputtered material, and surface diffusion of both impurity and target-atom species. The authors concentrate on the formation of ion bombardment-induced surface topography wherein surface diffusion is a dominant process. The most thoroughly understood aspect of this topography development is the generation of cone-like structures during sputtering. The formation of cones during sputtering has been attributed to three effects. These are: (1) the presence of asperities, defects, or micro-inclusions in the surface layers, (2) the presence of impurities on the surfaces, and (3) particular crystal orientations. (Auth.)

  10. Miniature electron bombardment evaporation source: evaporation rate measurement

    International Nuclear Information System (INIS)

    Nehasil, V.; Masek, K.; Matolin, V.; Moreau, O.

    1997-01-01

    Miniature electron beam evaporation sources which operate on the principle of vaporization of source material, in the form of a tip, by electron bombardment are produced by several companies specialized in UHV equipment. These sources are used primarily for materials that are normally difficult to deposit due to their high evaporation temperature. They are appropriate for special applications such as heteroepitaxial thin film growth requiring a very low and well controlled deposition rate. A simple and easily applicable method of evaporation rate control is proposed. The method is based on the measurement of ion current produced by electron bombardment of evaporated atoms. The absolute evaporation flux values were measured by means of the Bayard-Alpert ion gauge, which enabled the ion current vs evaporation flux calibration curves to be plotted. (author). 1 tab., 4 figs., 6 refs

  11. Inner-shell excitation in heavy ion collisions up to intermediate incident energies

    International Nuclear Information System (INIS)

    Reus, T. de.

    1987-04-01

    Electronic excitations in collisions of very heavy ions with a total nuclear charge Z greater than 1/α ≅ 137 at bombarding energies reaching from 3.6 MeV/n up to 100 MeV/n are the subject of this thesis. The dynamical behaviour of the electron-positron-field is described within a semiclassical model, which is reviewed and extended to include electronic interactions via a mean field. A detailed comparison with experimental data of K-vacancy formation, δ-electron and positron emission shows an improved agreement compared with former calculations. Structures in spectra of positrons emitted in sub- and supercritical collision are discussed in two respects: Firstly as a signal of the vacuum decay in supercritical electromagnetic fields which evolve in the vicinity of long living giant nuclear molecules. Secondly as an atomic effect, which might be related to an instaneous formation of molecular 1sσ- and 2p 1/2 σ- levels. However, beyond this speculation the emission spectra of electrons and positrons in deep inelastic reactions have proven to be a powerful tool for measuring nuclear reaction or delay times in the order of 10 -21 s. This property was transfered to the domain of intermediate energy collisions. In first order perturbation theory we derived a scaling law, exhibiting how nuclear stopping times could be extracted from the emission spectra of high energetic δ-electrons. Quantitative calculations within a coupled channel code have been carried out for the system Pb+Pb, yielding cross sections of up to 20 nb for the emission of electrons with a kinetic energy of 50 MeV in 60 MeV/n-collisions. (orig./HSI)

  12. Auger processes in ion-surface collisions

    International Nuclear Information System (INIS)

    Zampieri, Guillermo.

    1985-01-01

    Bombardment of solid targets with low-energy noble gas ions can produce Auger electron emission from the target atoms and/or from the projectiles. In the case of Auger emission from the projectile, Auger emission was observed during the bombardment of Na, Mg, Al and Si with Ne + ions. This emission was studied as a function of the energy, incidence angle and charge state of the projectile. From the analysis, it is concluded that the emission originates in the decay in vacuum of excited and reflected Ne atoms, moving outside the surface. Auger emission was not observed during the bombardment of K, V and Ni with Ar + ions; Zr and Cs with Kr + , and Xe + ions, respectively; and Li and Be with He + ions. In the case of Auger emission from the target, studies of certain aspects of the Na, Mg and Al Auger electron emission spectra were made. The results allow to identify two components in the Auger feature, coresponding to two kinds of Auger transition. The total spectra results from the superposition of both kinds of emission. Auger spectra from K obtained during Ar + and K + bombardment of K-implanted Be, Mg, Al and Cu were also analyzed. Similar to the Na, Mg and Al Auger spectra, the K Auger feature is composed of an atomic like peak superimposed on a bandlike structure. Both components correspond to Auger transitions in K atoms with a 3p vacancy, occuring in vacuum and inside the solid, respectively. (M.E.L.) [es

  13. Tuning the shape and damage in ion-beam induced ripples on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik, 57068 Siegen (Germany); Hanisch, Antje; Grenzer, Joerg [Helmholtz-Zentrum Dresden-Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, P.O. Box 510119, 01314 Dresden (Germany); Metzger, Till Hartmut [ESRF, 6 rue Jules Horowitz, BP220, 38043 Grenoble Cedex (France)

    2011-11-15

    We investigate the influence of ion beam parameters on the ripple formation on Si(001) surfaces after bombardment with Xe{sup +} ions of 25 keV kinetic energy using a scanning ion beam system. By combining grazing incidence X-ray diffraction, small angle scattering and X-ray reflectivity, we show that during ion irradiation with 70 off-normal angle of incidence, changing the size of the irradiated area leads to an increased number of defects at the interface towards crystalline material. At 65 angle of incidence, the ripple amplitude grows. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Ion-induced nanopatterns on semiconductor surfaces investigated by grazing incidence x-ray scattering techniques

    Energy Technology Data Exchange (ETDEWEB)

    Carbone, D; Metzger, T H [ID01, ESRF, 6 rue Jules Horowitz, F-38043 Grenoble Cedex (France); Biermanns, A; Pietsch, U [Festkoerperphysik, Universitaet Siegen, D-57068 Siegen (Germany); Ziberi, B; Frost, F [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., D-04318 Leipzig (Germany); Plantevin, O [Universite Paris-Sud, Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR 8609, F-91405 Orsay (France)], E-mail: gcarbone@esrf.fr

    2009-06-03

    In this review we cover and describe the application of grazing incidence x-ray scattering techniques to study and characterize nanopattern formation on semiconductor surfaces by ion beam erosion under various conditions. It is demonstrated that x-rays under grazing incidence are especially well suited to characterize (sub)surface structures on the nanoscale with high spatial and statistical accuracy. The corresponding theory and data evaluation is described in the distorted wave Born approximation. Both ex situ and in situ studies are presented, performed with the use of a specially designed sputtering chamber which allows us to follow the temporal evolution of the nanostructure formation. Corresponding results show a general stabilization of the ordering wavelength and the extension of the ordering as a function of the ion energy and fluence as predicted by theory. The in situ measurements are especially suited to study the early stages of pattern formation, which in some cases reveal a transition from dot to ripple formation. For the case of medium energy ions crystalline ripples are formed buried under a semi-amorphous thick layer with a ripple structure at the surface being conformal with the crystalline/amorphous interface. Here, the x-ray techniques are especially advantageous since they are non-destructive and bulk-sensitive by their very nature. In addition, the GI x-ray techniques described in this review are a unique tool to study the evolving strain, a topic which remains to be explored both experimentally and theoretically.

  15. Electron emission induced by resonant coherent interaction in ion-surface scattering at grazing incidence

    International Nuclear Information System (INIS)

    Garcia de Abajo, F.J.; Ponce, V.H.; Echenique, P.M.

    1994-01-01

    The resonant coherent interaction of an ion with an oriented crystal surface, under grazing-incidence conditions with respect to a special direction of the crystal, gives rise to electron loss to the continuum from electronic bound states of the ion. The calculations presented below predict large probabilities for electron emission due to this mechanism. The electrons are emitted with well defined energies, expressed in terms of the condition of resonance. Furthermore, the emission takes place around certain preferential directions, which are determined by both the latter condition and the symmetry of the surface lattice. Our calculations for MeV He + ions scattered at a W(001) surface along the left-angle 100 right-angle direction with glancing angle of 0--2 mrad indicate a yield of emission close to 1. Using heavier projectiles, one obtains smaller yields, but still large enough to be measurable in some cases (e.g., ∼0.9 for 53 MeV B 4+ and an angle of incidence of 1 mrad). Besides, the initial bound state is energy shifted due to the interaction with both the crystal potential and the velocity-dependent image potential. This results in a slight shift of the peaks of emission, which suggests a possible spectroscopy for analyzing the dynamical interaction of electronic bound states with solid surfaces

  16. Effect of Ar bombardment on the electrical and optical properties of ...

    Indian Academy of Sciences (India)

    The influence of low-energy Ar ion beam irradiation on both electrical and optical properties of low-density polyethylene (LDPE) films is presented. The polymer films were bombarded with 320 keV Ar ions with fuences up to 1 × 10 15 cm − 2 . Electrical properties of LDPE films were measured and the effect of ion ...

  17. Charge changing and excitation cross sections for 1-25 KeV hydrogen ions and atoms incident on sodium

    International Nuclear Information System (INIS)

    Howald, A.M.

    1983-01-01

    Measurements of charge changing and excitation cross sections for 1-25 keV beams of hydrogen atoms and ions incident on a sodium vapor target are reported. The charge changing cross sections are for reactions in which the incident H ion or atom gains or loses an electron during a collision with a Na atoms to form a hydrogen ion or atom in a different charge state. The six cross sections measured are sigma/sub +0/ and sigma/sub +-/ for incident protons, sigma/sub -0/ and sigma/sub -+/ for incident H - ions, and sigma/sub g-/ and sigma/sub g+/ for incident H(1s) atoms. Measurements are also reported for the negative, neutral, and positve equilibrium fractions for H beams in thick Na targets. The excitation cross sections are for reactions in which the Na target atom is excited to the 3p level by a collision with a H atom or ion. The five cross sections measured are for incident H + , H 2 + , H 3 + , and H - ions, and for H(1s) atoms. These cross sections are measured using a new technique that compares them directly to the known cross section for excitation by electron impact

  18. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

    International Nuclear Information System (INIS)

    Subramaniam, S.C.; Rezazadeh, A.A.

    2006-01-01

    The effects of Fe-ion bombardment at 77 K (cold) and room temperature (RT) into single layer InGaAs, InP and multilayer InP/InGaAs HBT structures have been investigated. Annealing characteristics and RF dissipation loss measurements of Fe-ion bombarded samples at 77 K indicated good electrical isolation in n-, p-type InGaAs materials and InP/InGaAs HBT structures. Thermally stable (up to 250 deg. C) high sheet resistance (R sh ) of ∼5 x 10 6 Ω/sq has been achieved on these samples while higher R sh of ∼10 7 Ω/sq was obtained for the n-InP materials bombarded with similar conditions. Dissipation losses of 1.7 dB/cm at 10 GHz and 2.8 dB/cm at 40 GHz have been measured for the cold Fe-ion bombarded InP-based HBT structures. This result is similar to those obtained for an un-bombarded S.I. InP substrate, indicating good electrical isolation. We have also determined electron trapping levels by thermal annealing for the cold and RT Fe-ion bombarded samples. It is shown that the high resistivity achieved in the cold implanted InGaAs layer is most likely due to the creation of mid-bandgap defect levels (E C - 0.33) eV, which are created only in the cold Fe-ion bombardment. The DC isolation and RF dissipation loss analysis have been used to identify a suitable bombardment scheme for the fabrication of planar InP/InGaAs HBTs

  19. Experimental apparatus to investigate interactions of low energy ions with solid surfaces, 1

    International Nuclear Information System (INIS)

    Tsukakoshi, Osamu; Narusawa, Tadashi; Mizuno, Masayasu; Sone, Kazuho; Ohtsuka, Hidewo.

    1975-12-01

    Experimental apparatus to study the surface phenomena has been designed, which is intended to solve the vacuum wall problems in future thermonuclear fusion reactors and large experimental tokamak devices. An ion source and the beam transport optics are provided for bombarding solid target surface with an ion beam of energy from 0.1 to 6 keV. Measuring instruments include an ion energy analyser, a quadrupole mass spectrometer, an Auger electron spectrometer, an electro-micro-balance, a neutral particle energy spectrometer and its calibration system. Pumping system consists of oil-free ultrahigh vacuum pumps. Various kinds of experiments will be carried out by using the apparatus: 1) sputtering by low energy ion bombardment, 2) re-emission of the incident particles during and after ion bombardment, 3) release of adsorbed and occluded gases in the solids by ion bombardment, and 4) backscattering of fast ions. The combinations of measuring instruments for each experiment and their relative positions in the vacuum chamber are described through detailed drawings. The fundamental aspect in design of the ion beam transport optics for a low energy ion beam which can no longer neglect the space charge effect is also discussed. (auth.)

  20. Molecular dynamics study of radiation damage and microstructure evolution of zigzag single-walled carbon nanotubes under carbon ion incidence

    Science.gov (United States)

    Li, Huan; Tang, Xiaobin; Chen, Feida; Huang, Hai; Liu, Jian; Chen, Da

    2016-07-01

    The radiation damage and microstructure evolution of different zigzag single-walled carbon nanotubes (SWCNTs) were investigated under incident carbon ion by molecular dynamics (MD) simulations. The radiation damage of SWCNTs under incident carbon ion with energy ranging from 25 eV to 1 keV at 300 K showed many differences at different incident sites, and the defect production increased to the maximum value with the increase in incident ion energy, and slightly decreased but stayed fairly stable within the majority of the energy range. The maximum damage of SWCNTs appeared when the incident ion energy reached 200 eV and the level of damage was directly proportional to incident ion fluence. The radiation damage was also studied at 100 K and 700 K and the defect production decreased distinctly with rising temperature because radiation-induced defects would anneal and recombine by saturating dangling bonds and reconstructing carbon network at the higher temperature. Furthermore, the stability of a large-diameter tube surpassed that of a thin one under the same radiation environments.

  1. Quantification of steroid conjugates using fast atom bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Gaskell, S.J.

    1990-01-01

    Fast atom bombardment/mass spectrometry or liquid secondary ion mass spectrometry provides the capability for direct analysis of steroid conjugates (sulfates, glucuronides) without prior hydrolysis or derivatization. During the analysis of biologic extracts, limitations on the sensitivity of detection arise from the presence of co-extracted material which may suppress or obscure the analyte signal. A procedure is described for the quantitative determination of dehydroepiandrosterone sulfate in serum which achieved selective isolation of the analyte using immunoadsorption extraction and highly specific detection using tandem mass spectrometry. A stable isotope-labeled analog [( 2H2]dehydroepiandrosterone sulfate) was used as internal standard. Fast atom bombardment of dehydroepiandrosterone sulfate yielded abundant [M-H]- ions that fragmented following collisional activation to give HSO4-; m/z 97. During fast atom bombardment/tandem mass spectrometry of serum extracts, a scan of precursor ions fragmenting to give m/z 97 detected dehydroepiandrosterone sulfate and the [2H2]-labeled analog with a selectivity markedly superior to that observed using conventional mass spectrometry detection. Satisfactory agreement was observed between quantitative data obtained in this way and data obtained by gas chromatography/mass spectrometry of the heptafluorobutyrates of dehydroepiandrosterone sulfate and [2H2]dehydroepiandrosterone sulfate obtained by direct derivatization. 21 refs

  2. Strong charge state dependence of H+ and H2+ sputtering induced by slow highly charged ions

    International Nuclear Information System (INIS)

    Kakutani, N.; Azuma, T.; Yamazaki, Y.; Komaki, K.; Kuroki, K.

    1995-01-01

    Secondary ion emission has been studied for very slow ( similar 0.01ν B ) highly charged Ar and N ions bombarding C 60 containing hydrogen as an impurity. It is found that the fragmentations of C 60 are very rare even for Ar 16+ bombardments. On the other hand, the sputtering of H + and H 2 + has been observed to increase drastically as a function of incident charge q like q γ (e.g., γ similar 4.6 for H + sputtering by 500 eV Ar q+ ). (orig.)

  3. Above-surface neutralization of multicharged ions incident on a cesiated Au target

    International Nuclear Information System (INIS)

    Meyer, F.W.; Hughes, I.G.; Overbury, S.H.

    1992-01-01

    The critical distance above the surface at which conduction band electrons can start to neutralize incident multicharged projectiles by classical overbarrier transitions is inversely proportional to the metal work function. By varying the amount of Cs coverage on a Au single crystal target between O and 1 monolayers, the authors have been able to verify an up to 3.3 eV decrease of the surface work function, corresponding to more than a factor of two decrease relative to that tabulated for clean Au. This change should result in more than doubling the above-surface interaction time. At larger above-surface distances, however, the electron capture most likely occurs into higher principal quantum numbers of the projectile. The subsequent de-excitation cascade by which inner shells of the projectiles are populated may thus require more time. The authors have investigated the overall effect that lowering the work function has on the above-surface component of projectile K-Auger electron emission for grazing incidence N 6+ ions interacting with cesiated Au single crystals. They will present results showing that an enhancement of this component is indeed observed, and that it is strongly dependent on incidence angle

  4. Generation of H-, D- ions on composite surfaces with application to surface/plasma ion source systems

    International Nuclear Information System (INIS)

    Hiskes, J.R.; Karo, A.M.; Wimmer, E.; Freeman, A.J.; Chubb, S.R.

    1983-01-01

    We review some salient features of the experimental and theoretical data pertaining to hydrogen negative ion generation on minimum-work-function composite surfaces consisting of Cs/transition metal substrates. Cesium or hydrogen ion bombardment of a cesium-activated negatively-biased electrode exposed to a cesium-hydrogen discharge results in the release of hydrogen negative ions. These ions originate through desorbtion of hydrogen particles by incident cesium ions, desorbtion by incident hydrogen ions, and by backscattering of incident hydrogen. Each process is characterized by a specific energy and angular distribution. The calculation of ion formation in the crystal selvage region is discussed for different approximations to the surface potential. An ab initio, all-electron, local density functional model for the composite surface electronics is discussed

  5. Energy Reflection Coefficients for 5-10 keV He Ions Incident on Au, Ag, and Cu

    DEFF Research Database (Denmark)

    Schou, Jørgen; Sørensen, H.; Littmark, U.

    1978-01-01

    The calorimetric deuterium-film method was used for measurements of the energy reflection coefficient γ for normal incidence of 5-10 keV He ions on Cu, Ag and Au. A theoretical calculation of γ by means of transport theory gives fair agreement with the experimental results. The experimental data...... the experimental and theoretical results for the He ions are in acceptable agreement with other experimental and theoretical results. For He ions, the experimental γ-values are 20-30% above the values for hydrogen ions for the same value of ε...

  6. On the Emission of Electrons from Solid H_2 and D_2 by Bombardment with 1-3 keV Electrons up to Very Large Angles of Incidence

    DEFF Research Database (Denmark)

    Schou, Jørgen; Sørensen, H.

    1982-01-01

    at the largest angles. The results agree well with the existing qualitative tendencies described in the literature. The variation with the angle of incidence shows a fair agreement with an estimate based on data for the angular distribution of electrons ejected from ionized hydrogen molecules. In addition......Electron emission, i.e. electron reflection (ER) and secondary electron emission (SEE), was studied for solid H2 and D2 for oblique incidence of 1-3 keV electrons up to an angle of incidence θ of 83°. The ER coefficient η was small at low angles, and rose rapidly with increasing θ above 60......, an ionization cascade treatment leads to an expression for the behavior of the yield of those secondary electrons that are generated directly by the primaries. The agreement with experimental data is good...

  7. A molecular dynamics study of helium bombardments on tungsten nanoparticles

    Science.gov (United States)

    Li, Min; Hou, Qing; Cui, Jiechao; Wang, Jun

    2018-06-01

    Molecular dynamics simulations were conducted to study the bombardment process of a single helium atom on a tungsten nanoparticle. Helium atoms ranging from 50 eV to 50 keV were injected into tungsten nanoparticles with a diameter in the range of 2-12 nm. The retention and reflection of projectiles and sputtering of nanoparticles were calculated at various times. The results were found to be relative to the nanoparticle size and projectile energy. The projectile energy of 100 eV contributes to the largest retention of helium atoms in tungsten nanoparticles. The most obvious difference in reflection exists in the range of 3-10 keV. Around 66% of sputtering atoms is in forward direction for projectiles with incident energy higher than 10 keV. Moreover, the axial direction of the nanoparticles was demonstrated to influence the bombardment to some degree.

  8. Damage and redistribution of impurities by ionic bombardment

    International Nuclear Information System (INIS)

    Tognetti, N.P.

    1982-01-01

    Some aspects of displacement collisions in solids bombarded with ions in the medium energy range have been studied using the backscattering and channelling techniques. The production of lattice damage and the spatial redistribution of atoms within the collision cascade were the two main effects considered and experimentally studied. A comprehensive study of disorder production in GaAs was carried out at 40 K for a variety of ions and ion energies, providing insight into the mechanisms of damage generation from both the macro and microscopic points of view. Experiments on thermal recovery of partially disordered substrates revealed that annealing occurs from approximately 100 K to 300 K. A direct procedure developed for the obtainment of damage profiles from backscattering-channelling measurements is described. The net spatial redistribution of displaced atoms, in combined impurity-matrix substrates was studied and compared with existing theories of ion beam mixing. The Ag-Si system was studied for a wide range of fluence of bombarding Ar + ions. Furthermore, the contribution of atomic mixing in the experimental observation of Ge implantation at high doses into Si is discussed. (M.E.L) [es

  9. Erosion of Be and deposition of C and O due to bombardment with C{sup +} and CO{sup +}

    Energy Technology Data Exchange (ETDEWEB)

    Eckstein, W.; Goldstrass, P.; Linsmeier, Ch. [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany)

    1998-01-01

    The bombardment of Be with 3 and 5 keV C{sup +} and CO{sup +} at normal incidence is investigated experimentally and by computer simulation with the program TRIDYN. The deposited amount of C and O is determined experimentally and found in good agreement with calculated data for C bombardment. Chemical erosion dominates at higher fluences for CO{sup +} bombardment. Calculations are then used to determine the sputter yield of Be at steady state conditions as a function of the plasma edge electron temperature for two C impurity concentrations in the incident D flux, typical for fusion plasmas. The fluence to reach steady state conditions is also investigated. (author)

  10. Dissociation of fast HeH+ ions in foils and gases

    International Nuclear Information System (INIS)

    Gemmell, D.S.; Cooney, P.J.; Pietsch, W.J.; Ratkowski, A.J.; Vager, Z.

    1978-01-01

    To gain understanding of phenomena observed when very simple light diatomic ions are incident at high velocities upon thin foils and gaseous targets, an extensive set of measurements on the dissociation products arising from beams of HeH + was made. Experimental and calculated joint distributions in energy and angle for protons emerging (near the beam direction) from an 85-A carbon foil bombarded by 2.0-MeV HeH + ions are presented

  11. Removal of foreign atoms from a metal surface bombarded with fast atomic particles

    Energy Technology Data Exchange (ETDEWEB)

    Dolotov, S.K.; Evstigneev, S.A.; Luk' yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

    1976-07-01

    A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal.

  12. Removal of foreign atoms from a metal surface bombarded with fast atomic particles

    International Nuclear Information System (INIS)

    Dolotov, S.K.; Evstigneev, S.A.; Luk'yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

    A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal

  13. High resistivity in InP by helium bombardment

    International Nuclear Information System (INIS)

    Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

    1984-01-01

    Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

  14. Transient effects in SIMS analysis of Si with Cs sup + at high incidence angles Secondary ion yield variations

    CERN Document Server

    Heide, P A W

    2002-01-01

    Secondary ion mass spectrometry (SIMS) depth profile analysis of Si wafers using 1 keV Cs sup + primary ions at large incidence angles (80 deg. ) is plagued by unusually strong transient effects (variations in both sputter and ion yields). Analysis of a native oxide terminated Si wafer with and without the aid of an O sub 2 leak, and an Ar sup + pre-sputtered wafer revealed correlations between the implanted Cs content and various secondary ion intensities consistent with that expected from a resonance charge transfer process (that assumed by the electron tunneling model). Cs concentrations were defined through X-ray photoelectron spectroscopy of the sputtered surface from SIMS profiles terminated within the transient region. These scaled with the surface roughening occurring under these conditions and can be explained as resulting from the associated drop in sputter rates. An O induced transient effect from the native oxide was also identified. Characterization of these effects allowed the reconstruction of ...

  15. Vertical incidence of slow Ne{sup 10+} ions on an LiF surface: Suppression of the trampoline effect

    Energy Technology Data Exchange (ETDEWEB)

    Wirtz, Ludger E-mail: lwirtz@concord.itp.tuwien.ac.at; Lemell, Christoph; Reinhold, Carlos O.; Haegg, Lotten; Burgdoerfer, Joachim

    2001-08-01

    We present a Monte Carlo simulation of the neutralization of a slow Ne{sup 10+} ion in vertical incidence on an LiF(1 0 0) surface. The rates for resonant electron transfer between surface F{sup -} ions and the projectile are calculated using a classical trajectory Monte Carlo simulation. We investigate the influence of the hole mobility on the neutralization sequence. It is shown that backscattering above the surface due to the local positive charge up of the surface ('trampoline effect') does not take place.

  16. Vertical incidence of slow Ne 10+ ions on an LiF surface: Suppression of the trampoline effect

    Science.gov (United States)

    Wirtz, Ludger; Lemell, Christoph; Reinhold, Carlos O.; Hägg, Lotten; Burgdörfer, Joachim

    2001-08-01

    We present a Monte Carlo simulation of the neutralization of a slow Ne 10+ ion in vertical incidence on an LiF(1 0 0) surface. The rates for resonant electron transfer between surface F - ions and the projectile are calculated using a classical trajectory Monte Carlo simulation. We investigate the influence of the hole mobility on the neutralization sequence. It is shown that backscattering above the surface due to the local positive charge up of the surface ("trampoline effect") does not take place.

  17. Vertical incidence of slow Ne10+ ions on an LiF surface: Suppression of the trampoline effect

    International Nuclear Information System (INIS)

    Wirtz, Ludger; Lemell, Christoph; Reinhold, Carlos O.; Haegg, Lotten; Burgdoerfer, Joachim

    2001-01-01

    We present a Monte Carlo simulation of the neutralization of a slow Ne 10+ ion in vertical incidence on an LiF(1 0 0) surface. The rates for resonant electron transfer between surface F - ions and the projectile are calculated using a classical trajectory Monte Carlo simulation. We investigate the influence of the hole mobility on the neutralization sequence. It is shown that backscattering above the surface due to the local positive charge up of the surface ('trampoline effect') does not take place

  18. Review of heavy ion reaction mechanisms

    International Nuclear Information System (INIS)

    Ngo, C.

    1986-04-01

    We review some of the many aspects of heavy-ion reaction mechanisms observed at bombarding energies smaller than approximately 50 MeV/u that is to say in what is called the low bombarding energy domain and the intermediate bombarding energy domain. We emphasize the results concerning the use of very heavy projectiles which has led to the observation of new mechanisms

  19. Hydrogen pumping and release by graphite under high flux plasma bombardment

    International Nuclear Information System (INIS)

    Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; Labombard, B.; Nygren, R.; Wilson, K.L.

    1988-01-01

    Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ∼ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 degree C. The plasma bombarding energy was varied between 100 and 200 eV. The gettering speed of the activated graphite surface is estimated to be as large as 25 liters s -1 cm -2 at total pressures between 10 -6 and 10 -7 torr. The gettering capacity estimated is 0.025 torr-liter/cm 2 at room temperature. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 degree C and at a plasma bombarding energy of 300 eV

  20. Modeling the reduction of gross lithium erosion observed under high-flux deuterium bombardment

    NARCIS (Netherlands)

    Abrams, T.; Jaworski, M. A.; Kaita, R.; Nichols, J. H.; Stotler, D. P.; De Temmerman, G.; van den Berg, M. A.; van der Meiden, H. J.; Morgan, T. W.

    2015-01-01

    Abstract Both thin (<1 μm) and thick (∼500 μm) lithium films under high-flux deuterium and neon plasma bombardment were studied in the linear plasma device Magnum-PSI at ion fluxes >1024 m−2 s−1 and surface temperatures <700 °C.

  1. Study of highly charged ion production by electron cyclotron resonance ion source. Interactions of Argon 17+ ions with metallic surface at grazing incidence

    International Nuclear Information System (INIS)

    Ban, G.

    1992-04-01

    In this thesis divided in 2 parts, the author first presents the operating of MiniMafios 16/18 GHz ECR ion sources and methods of extracted multicharged ion identification and then, studies the highly charged ion interactions with a metallic surface and the formation of 'hollow atoms'. 556 figs., 17 tabs

  2. Production of the Ne Auger electrons by Ne/sup +/ bombardment of Mg and Al surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ferrante, J; Pepper, S V [National Aeronautics and Space Administration, Cleveland, Ohio (USA). Lewis Research Center

    1976-07-01

    The authors have bombarded Mg and Al surfaces with Ne/sup +/ ions and in this letter present evidence for the production of an inner shell vacancy in the Ne by the asymmetric Ne-Mg and Ne-Al collision. In addition, autoionization states of neutral Ne have been observed. These states are to be distinguished from the more usual case in Auger electron spectroscopy of de-excitation of an ion with a core vacancy.

  3. Actinide production in 136Xe bombardments of 249Cf

    International Nuclear Information System (INIS)

    Gregorich, K.E.

    1985-08-01

    The production cross sections for the actinide products from 136 Xe bombardments of 249 Cf at energies 1.02, 1.09, and 1.16 times the Coulomb barrier were determined. Fractions of the individual actinide elements were chemically separated from recoil catcher foils. The production cross sections of the actinide products were determined by measuring the radiations emitted from the nuclides within the chemical fractions. The chemical separation techniques used in this work are described in detail, and a description of the data analysis procedure is included. The actinide production cross section distributions from these 136 Xe + 249 Cf bombardments are compared with the production cross section distributions from other heavy ion bombardments of actinide targets, with emphasis on the comparison with the 136 Xe + 248 Cm reaction. A technique for modeling the final actinide cross section distributions has been developed and is presented. In this model, the initial (before deexcitation) cross section distribution with respect to the separation energy of a dinuclear complex and with respect to the Z of the target-like fragment is given by an empirical procedure. It is then assumed that the N/Z equilibration in the dinuclear complex occurs by the transfer of neutrons between the two participants in the dinuclear complex. The neutrons and the excitation energy are statistically distributed between the two fragments using a simple Fermi gas level density formalism. The resulting target-like fragment initial cross section distribution with respect to Z, N, and excitation energy is then allowed to deexcite by emission of neutrons in competition with fission. The result is a final cross section distribution with respect to Z and N for the actinide products. 68 refs., 33 figs., 6 tabs

  4. Incidence Angle Effect of Energetic Carbon Ions on Deposition Rate, Topography, and Structure of Ultrathin Amorphous Carbon Films Deposited by Filtered Cathodic Vacuum Arc

    KAUST Repository

    Wang, N.; Komvopoulos, K.

    2012-01-01

    The effect of the incidence angle of energetic carbon ions on the thickness, topography, and structure of ultrathin amorphous carbon (a-C) films synthesized by filtered cathodic vacuum arc (FCVA) was examined in the context of numerical

  5. Adverse reaction to metal debris in a consecutive series of DUROM™ hip resurfacing: pseudotumour incidence and metal ion concentration.

    Science.gov (United States)

    Hartmann, Albrecht; Kieback, Jan-Dirk; Lützner, Jörg; Günther, Klaus-Peter; Goronzy, Jens

    2017-07-25

    The aim of this study was to evaluate the incidence of adverse reactions to metal debris (ARMD) in a consecutive series of DUROM™ Hip Resurfacing Arthroplasty (HRA) at mid-term follow-up. Between October 2003 and March 2007 a total of 134 consecutive DUROM™ HRA in 121 patients were performed at our institution. Follow-up could be obtained in 101 unrevised patients (83%) at a mean time of 8.51 ± 0.97 years postoperatively and included patient-related outcome measurement, plain radiographs, MARS-MRI as well as whole blood metal ion assessment. 17 (16.5%) out of 103 hips revealed pseudotumour occurrence in MRI investigation, 1 (10.6%) with a diameter of ≥2 cm. Higher incidence of pseudotumours was found patients with femoral component size 7 μg/l. In contrast to cobalt determination, only elevated chromium values showed a positive association with pseudotumour occurrence and size. A significant proportion of patients developed pseudotumours and metal ion elevation in a consecutive cohort of DUROM™ HRA after mid-term follow-up. The incidence, however, seems not to differ from results of other well performing resurfacing brands; clinical relevance of our findings is unclear. Regarding potential local as well as systemic effects of metal particle release, close follow-up of patients is essential, even with clinically well-performing implants.

  6. Virtual-anode formation by an intense pulsed ion beam incident upon a magnetic barrier

    International Nuclear Information System (INIS)

    Robertson, S.; Wessel, F.

    1980-01-01

    An intense, pulsed, initially space-charge-neutral ion beam (100 kV, 1 kA, 600 nsec) has been propagated into a transversely oriented magnetic barrier. When the magnetic field is adjusted so that (rho/sub i/rho/sub e/)/sup 1/2/ very-much-less-than a < rho/sub i/, a virtual anode is formed whose potential oscillates at approx.ω/sub p/i about a value near the ion accelerating potential, where a is the transverse beam dimension, ω/sub tsp/i is the ion plasma frequency, and rho/sub e/ and rho/sub i/ are the electron and ion gyroradii. This behavior is similar to that predicted by Poukey and Rostoker for virtual cathodes

  7. High energy Xe{sup +} ion beam induced ripple structures on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan; Winkler, Ingolf [Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany). Institute of Physics

    2008-07-01

    Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe{sup +} ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

  8. Grazing incidence small angle X-ray scattering study of silver nanoparticles in ion-exchanged glasses

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Weidong, E-mail: 57399942@qq.com [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Wu, Zhaojun [Department of Practice Teaching and Equipment Management, Qiqihar University, Qiqihar 161006 (China); Gu, Xiaohua [College of Materials Science and Engineering, Qiqihar University, Qiqihar 161006 (China); Xing, Xueqing; Mo, Guang [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Wu, Zhonghua, E-mail: wuzh@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2015-05-15

    The size and distribution of silver nanoparticles in ion-exchanged silicate glass induced by thermal treatments in air at different temperatures were investigated by means of grazing incidence small angle X-ray scattering technique, X-ray diffraction and optical absorption spectra. Silver–sodium ion exchange of soda-lime silicate glasses was done at 350 °C for 240 min, then the samples were treated by thermal annealing in air at different temperatures 400, 500 and 550 °C, respectively, for 1 h. After the annealing treatment above 400 °C for 1 h, smaller Ag nanoparticles occurred, together with bigger ones. Both dissolution of smaller Ag nanoparticles and diffusion of larger ones are discussed in these stages of annealing in this contribution.

  9. Fast atom bombardment tandem mass spectrometry of carotenoids

    Energy Technology Data Exchange (ETDEWEB)

    van Breeman, R.B. [Univ. of Illinois, Chicago, IL (United States); Schmitz, H.H.; Schwartz, S.J. [North Carolina State Univ., Raleigh, NC (United States)

    1995-02-01

    Positive ion fast atom bombardment (FAB) tandem mass spectrometry (MS-MS) using a double-focusing mass spectrometer with linked scanning at constant B/E and high-energy collisionally activated dissociation (CAD) was used to differentiate 17 different cartenoids, including {beta}-apo-8{prime}- carotenal, astaxanthin, {alpha}-carotene, {beta}-carotene, {gamma}-carotene, {zeta}-carotene, canthaxanthin, {beta}-cryptoxanthin, isozeaxanthin bis (pelargonate), neoxanthin, neurosporene, nonaprene, lutein, lycopene, phytoene, phytofluene, and zeaxanthin. The carotenoids were either synthetic or isolated from plant tissues. The use of FAB ionization minimized degradation or rearrangement of the carotenoid structures due to the inherent thermal instability generally ascribed to these compounds. Instead of protonated molecules, both polar xanthophylls and nonpolar carotenes formed molecular ions, M{sup {center_dot}+}, during FAB ionization. Following collisionally activated dissociation, fragment ions of selected molecular ion precursors showed structural features indicative of the presence of hydroxyl groups, ring systems, ester groups, and aldehyde groups and the extent of aliphatic polyene conjugation. The fragmentation patterns observed in the mass spectra herein may be used as a reference for the structural determination of carotenoids isolated from plant and animal tissues. 18 refs., 4 figs.

  10. Highly charged ions impinging on a stepped metal surface under grazing incidence

    NARCIS (Netherlands)

    Robin, A; Niemann, D; Stolterfoht, N; Heiland, W

    We report on energy loss measurements and charge state distributions for 60 keV N6+ and 75 keV N5+ ions scattered off a Pt(110)(1x2) single crystal surface. In particular, the influence of surface steps on the energy loss and the outgoing charge states is discussed. The scattering angle and the

  11. Surface Collisions of Small Cluster Ions at Incident Energies 10-102 eV

    Czech Academy of Sciences Publication Activity Database

    Herman, Zdeněk

    2004-01-01

    Roč. 233, - (2004), s. 361-371 ISSN 1387-3806 R&D Projects: GA MŠk ME 561 Grant - others:XE(CZ) EURATOM-IPP.CR Institutional research plan: CEZ:AV0Z4040901 Keywords : surface collisions * cluster ions * unimolecular dissociation Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.235, year: 2004

  12. Room temperature deposition of high figure of merit Al-doped zinc oxide by pulsed-direct current magnetron sputtering: Influence of energetic negative ion bombardment on film's optoelectronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Fumagalli, F., E-mail: francesco.fumagalli@iit.it; Martí-Rujas, J., E-mail: javier.rujas@iit.it; Di Fonzo, F., E-mail: fabio.difonzo@iit.it

    2014-10-31

    Aluminum-doped zinc oxide is regarded as a promising indium-free transparent conductive oxide for photovoltaic and transparent electronics. In this study high transmittance (up to 90,6%) and low resistivity (down to 8,4°1{sup −4} Ω cm) AZO films were fabricated at room temperature on thermoplastic and soda-lime glass substrates by means of pulsed-DC magnetron sputtering in argon gas. Morphological, optical and electrical film properties were characterized using scanning electron microscopy, UV–vis–nIR photo-spectrometer, X-ray spectroscopy and four probes method. Optimal deposition conditions were found to be strongly related to substrate position. The dependence of functional properties on substrate off-axis position was investigated and correlated to the angular distributions of negative ions fluxes emerging from the plasma discharge. Figure of merit as high as 2,15 ± 0,14 Ω{sup −1} were obtained outside the negative oxygen ions confinement region. Combination of high quality AZO films deposited on flexible polymers substrates by means of a solid and scalable fabrication technique is of interest for application in cost-effective optoelectrical devices, organic photovoltaics and polymer based electronics. - Highlights: • High figure of merit transparent conductive oxide's deposited at room temperature. • High transmittance and low resistivity obtained on thermoplastic substrates. • Competitive optoelectrical properties compared to high temperature deposition. • Negative ion fluxes confinement influence structural and optoelectrical properties. • Easily adaptable for scaled-up low temperature AZO film deposition installations.

  13. Highly ordered nanopatterns on Ge and Si surfaces by ion beam sputtering

    International Nuclear Information System (INIS)

    Ziberi, B; Cornejo, M; Frost, F; Rauschenbach, B

    2009-01-01

    The bombardment of surfaces with low-energy ion beams leads to material erosion and can be accompanied by changes in the topography. Under certain conditions this surface erosion can result in well-ordered nanostructures. Here an overview of the pattern formation on Si and Ge surfaces under low-energy ion beam erosion at room temperature will be given. In particular, the formation of ripple and dot patterns, and the influence of different process parameters on their formation, ordering, shape and type will be discussed. Furthermore, the internal ion beam parameters inherent to broad beam ion sources are considered as an additional degree of freedom for controlling the pattern formation process. In this context: (i) formation of ripples at near-normal ion incidence, (ii) formation of dots at oblique ion incidence without sample rotation, (iii) transition between patterns, (iv) formation of ripples with different orientations and (v) long range ordered dot patterns will be presented and discussed.

  14. Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study

    Science.gov (United States)

    Wei, Ye; Sang, Shengbo; Zhou, Bing; Deng, Xiao; Chai, Jing; Ji, Jianlong; Ge, Yang; Huo, Yuanliang; Zhang, Wendong

    2017-09-01

    Carbon cluster ion implantation is an important technique in fabricating functional devices at micro/nanoscale. In this work, a numerical model is constructed for implantation and implemented with a cutting-edge molecular dynamics method. A series of simulations with varying incident energies and incident angles is performed for incidence on silicon substrate and correlated effects are compared in detail. Meanwhile, the behavior of the cluster during implantation is also examined under elevated temperatures. By mapping the nanoscopic morphology with variable parameters, numerical formalism is proposed to explain the different impacts on phrase transition and surface pattern formation. Particularly, implantation efficiency (IE) is computed and further used to evaluate the performance of the overall process. The calculated results could be properly adopted as the theoretical basis for designing nano-structures and adjusting devices’ properties. Project supported by the National Natural Science Foundation of China (Nos. 51622507, 61471255, 61474079, 61403273, 51502193, 51205273), the Natural Science Foundation of Shanxi (Nos. 201601D021057, 201603D421035), the Youth Foundation Project of Shanxi Province (Nos. 2015021097), the Doctoral Fund of MOE of China (No. 20131402110013), the National High Technology Research and Development Program of China (No. 2015AA042601), and the Specialized Project in Public Welfare from The Ministry of Water Resources of China (Nos. 1261530110110).

  15. Emission of medium-heavy fragments in asymetric heavy ion collisions at intermediate and relativistic incident energies

    International Nuclear Information System (INIS)

    Milkau, T.U.E.

    1991-11-01

    For the study of the emission of medium-heavy fragments in asymmetric heavy ion collisions a series of experiments was performed and thereby following systems at intermediate and relativistic incident energies studied: 84 Kr+ 197 Au at E/A=35 MeV, 40 Ar+ 197 Au at E/A=30 MeV, respectively 220 MeV, and 12 C+ 197 Au at E/A=99 MeV, 301 MeV, 601 MeV, respectively 1105 MeV. In the experiments highly resolving detector telescopes with low thresholds were applied to the measurement of the energy and angular distributions of the medium-heavy fragments. The spectra were analyzed in the picture of longitudinally moving sources. Thereby beyond the production cross sections the angular distributions, the decreasement parameters in the high-energetic region of the energy spectra, and the position of the maxima were determined as characteristic parameters. The following picture resulted: The production cross sections for medium-heavy fragments showed a steep increasement and then a saturation, but with a strong projectile dependence. The charge distributions could be described by a power law, the parameter of which showed a universal dependence on the total incident energy. In the angular distributions the transition from an anisotropic emission at low energies to an isotropic emission from a nearly resting source at relativistic energies was distinctly to be recognized. The decreasement parameters of the energy distribution increased - for different projectiles differently strongly - logarithmically with growing incident energy. And the maxima of the energy distribution travelled with growing incident energy to smaller and smaller fragment energies. From this systematics a schematic model of the fragmentation can be obtained. (orig./HSI) [de

  16. Generation of H-, H2(v double-prime), and H atoms by H2+ and H3+ ions incident upon barium surfaces

    International Nuclear Information System (INIS)

    Hiskes, J.R.; Karo, A.M.

    1989-01-01

    The generation of vibrationally excited molecules by electron excitation collisions and the subsequent generation of negative ions by dissociative attachment to these molecules has become a standard model for volume source operation. These processes have been supplemented recently by the demonstration of atom-surface recombination to form vibrationally excited molecules, and enhanced negative ion formation by protons incident upon barium electrodes. In this paper we consider the additional processes of molecular vibrational excitation generated by recombination of molecular ions on the electrode surfaces, and negative ion formation by vibrationally excited molecules rebounding from low work-function electrodes. 10 refs., 4 figs

  17. Hydrogen pumping and release by graphite under high flux plasma bombardment

    International Nuclear Information System (INIS)

    Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; LaBombard, B.; Nygren, R.; Wilson, K.L.

    1988-01-01

    Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ≅ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 0 C. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 0 C and at a plasma bombarding energy of 300 eV. The graphite temperature was varied between 15 and 480 0 C. Due to the plasma particle pumping capability, hydrogen recycling from the activated graphite surface is significantly reduced, relative to that from a pre-saturated surface. A pre-saturated surface was also observed to reproducibly pump a hydrogen plasma to a concentration of 9.5 x 10 17 H/cm 2 . The hydrogen retention capacity of graphite is found to decrease with increasing temperature. A transient pumping mechanism associated with the sponge-like surface morphology is conjectured to explain the large hydrogen retention capacity. Hydrogen release behavior under helium and argon plasma bombardment was also investigated, and the result indicated the possibility of some in-pore retrapping effect. 43 refs., 11 figs

  18. Heating nuclei with light ions at GeV incident energies

    International Nuclear Information System (INIS)

    Pollacco, E.C.; Brzychczyk, J.; Volant, C.; Legrain, R.; Nalpas, L.; Bracken, D.S.; Kwiatkowski, K.; Morley, K.B.; Foxford, E.R.; Viola, V.E.; Yoder, N.R.

    1996-03-01

    Hot nuclei are studied, where through an appropriate choice of incident channel and event selection, dynamical effects are attenuated and multifragmentation is limited. Three preparatory results are discussed, the 3 He(1.8 GeV) + nat Ag can be described using and intranuclear cascade, INC, model; through a suitable selection of events a limit of the excitation energy that a nucleus can absorb without breaking into large pieces is given, it is shown, that corresponding alpha decay is consistent with an, evaporative process. (K.A.)

  19. Spatial variation in void volume during charged particle bombardment: the effects of injected interstitials

    International Nuclear Information System (INIS)

    Lee, E.H.; Mansur, L.K.; Yoo, M.H.

    1979-01-01

    Experimental observations of the void volume at several depths along the range of 4 MeV Ni ions in 316 stainless steel are reported. The specimens were first preconditioned by neutron irradiation at temperatures of 450 and 584 0 C to fluences of approximately 8 x 10 26 n/m -2 . The void volume after ion bombardment to 60 dpa at the peak damage depth is significantly lower at the peak damage depth than in the region between that and the free surface. The ratio of the step height to void volume at the depth of peak energy deposition between regions masked from and exposed to the beam is strongly dependent on bombardment temperature. The reduction of void volume near the peak damage depth is larger for the 584 0 C than for the 450 0 C preconditioned material. These observations are consistent with recent theoretical results which account for the injection of the bombarding ions as self-interstitials. The theory necessary to understand the effect is developed

  20. Dependence of ion-electron emission from clean metals on the incidence angle of the projectile

    International Nuclear Information System (INIS)

    Ferron, J.; Alonso, E.V.; Baragiola, R.A.; Oliva-Florio, A.

    1981-01-01

    We have studied the dependence of electron yields γ from clean Cu and Au surfaces on the incidence angle theta of 5--50-keV He + , Ar + , and Xe + projectiles, in the angular range 0--80 0 , and under ultrahigh-vacuum conditions. We have found that, at small angles, γproportionalsec/sup f/theta, with f generally different from unity. For Xe + on Cu, γ(theta) presents an energy-dependence maximum, similar to that obtained for sputtering. The results are explained in terms of the anisotropy of the electron cascade in the solid, the depth distribution of the inelastic energy deposited by the projectile and by rapidly recoiling target atoms in the near-surface region of the solid

  1. Dependence of ion-electron emission from clean metals on the incidence angle of the projectile

    Energy Technology Data Exchange (ETDEWEB)

    Ferron, J.; Alonso, E.V.; Baragiola, R.A.; Oliva-Florio, A.

    1981-10-15

    We have studied the dependence of electron yields ..gamma.. from clean Cu and Au surfaces on the incidence angle theta of 5--50-keV He/sup +/, Ar/sup +/, and Xe/sup +/ projectiles, in the angular range 0--80 /sup 0/, and under ultrahigh-vacuum conditions. We have found that, at small angles, ..gamma..proportionalsec/sup f/theta, with f generally different from unity. For Xe/sup +/ on Cu, ..gamma..(theta) presents an energy-dependence maximum, similar to that obtained for sputtering. The results are explained in terms of the anisotropy of the electron cascade in the solid, the depth distribution of the inelastic energy deposited by the projectile and by rapidly recoiling target atoms in the near-surface region of the solid.

  2. Sputtering of solid deuterium by He-ions

    DEFF Research Database (Denmark)

    Schou, Jørgen; Stenum, B.; Pedrys, R.

    2001-01-01

    Sputtering of solid deuterium by bombardment of 3He+ and 4He+ ions was studied. Some features are similar to hydrogen ion bombardment of solid deuterium, but for the He-ions a significant contribution of elastic processes to the total yield can be identified. The thin-film enhancement is more pro...... pronounced than that for hydrogen projectiles in the same energy range....

  3. Modification of graphene by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Bukowska, Hanna; Akcoeltekin, Sevilay; El Kharrazi, Mourad; Schleberger, Marika [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Osmani, Orkhan [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Technische Universitaet Kaiserslautern, Fachbereich Physik, Gottlieb-Daimler-Strasse, Gebaeude 47, 67663 Kaiserslautern (Germany)

    2010-07-01

    Ion irradiation can be used to modify surfaces on the nanometer scale. We investigate graphene on different insulator (SrTiO{sub 3}, TiO{sub 2}, and Al{sub 2}O{sub 3}) and semiconductor (SiO{sub 2}) substrates. The bombardment of those target surfaces with swift heavy ions under grazing angle of incidence creates chains of nanodots on the substrate and folds graphene to typical origami-like structures. The shape of the folded graphene seems to depend on the length of the tracks. The length can be controlled by the angle of incidence. From the analysis of atomic force microscopy measurements, we classify the different types of modifications, with the aim to determine the relationship between chain length and origami shape. Further more we want to develop a theoretical understanding of the physical processes leading to the folding.

  4. Characterization of high-T/sub c/ Nb--Ge thin films by ion scattering, ion-induced x-rays, and ion resonance techniques

    International Nuclear Information System (INIS)

    Miller, J.W.; Appleton, E.R.; Murphree, Q.C.; Gavaler, J.R.

    1976-01-01

    Thin films of high-T/sub c/ (21-22 0 K) Nb--Ge were analyzed using three ion bombardment techniques. The depth dependence of stoichiometry in these superconducting thin films is determined by the deconvolution of a series of Rutherford backscattering spectra using 2.0-3.2 MeV 4 He ions at several incidence and scattering angles. Confirmation of these results is provided by studying the yields of Nb and Ge characteristic X-rays as a function of the angle of beam incidence. The depth dependence of oxygen, or oxides of Nb and Ge, is of particular interest, but more difficult to determine. A very sharp ion scattering resonance 16 O (α,α) at 3.045 MeV was utilized to enhance the backscattered yield and depth sensitivity of oxygen determination. The combined use of these three techniques now provides a nearly complete and nondestructive means for the characterization of such films

  5. Beryllium dust generation resulting from plasma bombardment

    International Nuclear Information System (INIS)

    Doerner, R.; Mays, C.

    1997-01-01

    The beryllium dust resulting from erosion of beryllium samples subjected to plasma bombardment has been measured in PISCES-B. Loose surface dust was found to be uniformly distributed throughout the device and accounts for 3% of the eroded material. A size distribution measurement of the loose surface dust shows an increasing number of particles with decreasing diameter. Beryllium coatings on surfaces with a line of sight view of the target interaction region account for an additional 33% of the eroded beryllium material. Flaking of these surface layers is observed and is thought to play a significant role in dust generation inside the vacuum vessel. (orig.)

  6. Angle resolved electron spectroscopy of spontaneous ionization processes occurring in doubly charged ion-surface collisions at grazing incidence

    International Nuclear Information System (INIS)

    Wouters, P.A.A.F.; Emmichoven, P.A.Z. van; Niehaus, A.

    1989-01-01

    The experimental setup used to measure electron spectra at well defined detection angles for grazing incidence doubly charged ion-surface collisions at keV-energies is described. Electron spectra are reported for the rare gas ions colliding with a Cu(110)-surface. The spectra are analyzed in terms of various spontaneous ionization processes using a newly developed model. It is found that double capture followed by atomic auto-ionization on the incoming trajectory and Auger-capture processes in which the first and second hole in the doubly charged projectiles are successively filled are the main processes contributing to the electron spectra. From a comparison of model calculations with measured spectra it is concluded that the metal electrons cannot adapt adiabatically to the sudden changes of the charge state of the projectile in front of the surface. A parameter characterizing the partly diabatic behavior is determined. The variation of spectra upon adsorption of a monolayer of oxygen on the surface is reported and discussed. (author)

  7. Ultrafast carrier dynamics in Br.sup.+./sup.-bombarded InP studied by time-resolved terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Němec, Hynek; Fekete, Ladislav; Kadlec, Filip; Kužel, Petr

    2008-01-01

    Roč. 78, č. 23 (2008), 235206/1-235206/7 ISSN 1098-0121 R&D Projects: GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : InP * carrier lifetime * carrier mobility * ultrafast * ion-bombardment * terahertz Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

  8. Ripple structures on surfaces and underlying crystalline layers in ion beam irradiated Si wafers

    Energy Technology Data Exchange (ETDEWEB)

    Grenzer, J.; Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany); Biermanns, A.; Grigorian, S.A.; Pietsch, U. [Institute of Physics, University of Siegen (Germany)

    2009-08-15

    We report on the formation of ion beam induced ripples in Si(001) wafers when bombarded with Ar+ ions at an energy of 60 keV. A set of samples varying incidence and azimuthal angles of the ion beam with respect to the crystalline surface orientation was studied by two complementary near surface sensitive techniques, namely atomic force microscopy and depth-resolved X-ray grazing incidence diffraction (GID). Additionally, cross-section TEM investigations were carried out. The ripple-like structures are formed at the sample surface as well as at the buried amorphous-crystalline interface. Best quality of the ripple pattern was found when the irradiating ion beam was aligned parallel to the (111) planes. The quality decreases rapidly if the direction of the ion beam deviates from (111). (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  9. Ion emission in solids bombarded with Au{sub n}{sup +} (n = 1 - 9) clusters accelerated within the 0.15 - 1.25 MeV energy range; Emission ionique des solides a l'impact d'agregats Au{sub n}{sup +} (n=1-9) acceleres entre 0,15 et 1,25 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Wehbe, Nimer [Universite Claude Bernard Lyon-I, 43 boulevard du 11 Novembre 1918, 69622 Villeurbanne cedex (France)

    2006-06-15

    This experimental work is devoted to the study of the ion emission in solids at the impact of gold clusters of energies within 0.15 to 1.25 MeV range. The physics of ion-solid collisions and the theoretical models of sputtering of solids under ion bombardment are presented in the first chapter. The chapter no. 2 deals with the description of the experimental setup. The study of a gold target allowed to evidence the role of the size and energy of the clusters in determining the emission intensity and the mass distribution of the ions. The 4. chapter gives results from the study of cesium iodide in which the intense emission of CsI clusters could be investigated quantitatively due to multiplicity measurements. Finally, the chapter no. 5 was devoted to the study of a biologic molecule, the phenylalanine, and of a pesticide molecule, chlorosulfuron. This work evidenced the importance of clusters for surface analyses by mass spectrometry.

  10. Electrochemically assisted fast-atom-bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Phillips, L.R.

    1988-01-01

    The hybridization of electrochemistry and fast atom bombardment (FAB) mass spectrometry (MS) creates a new hyphenated technique, referred to as electrochemically assisted FAB (EFAB) MS, which improves the applicability of FAB MS in selectivity and extends the range of compounds to include low polarity molecules, and also reduces mass spectral complications due to matrix-related artifacts. FAB MS has proven to be indispensable in analysis of samples that are otherwise too intractable for conventional MS, such as peptides, oligosaccharides, and oligonucleotides, due to low volatility and ready thermal degradation. There are limits on its applicability, however, in that it works best with samples that are already ionic, or predisposed to become so by simple proton transfer to or from the matrix. A wide range of chemical substances can be ionized/analyzed by electrochemical methods. Therefore, a possible approach towards improving applicability of FAB MS is through its hybridization with electrochemistry. Samples are activated by electrolysis, carried out directly in the sample matrix through use of a modified FAB sample probe which was constructed containing a small electrolytic cell on the tip. In operation, one electrode is held at normal sample-probe/ion-source voltage, while the other electrode can be continuously varied ±15 volts to create electrochemical potentials. Several chemical substances, known to be unresponsive to FAB MS, have been examined by EFAB MS. Resultant spectra generally show a dramatic increases in signal/chemical noise ratio of structurally significant ions when compared to normal FAB spectra

  11. Charge state and incident energy dependence of K X-ray emission as a function of target thickness for 50-165 MeV Cu ions incident on 11-250 μg/cm2 Cu

    International Nuclear Information System (INIS)

    Momoi, T.; Shima, K.; Umetani, K.; Moriyama, M.; Ishihara, T.; Mikumo, T.

    1986-01-01

    Thin self-supporting Cu targets in 11-250 μg/cm 2 thickness were bombarded with 50-165 MeV Cu sup(qi + ) ions (7 + )+Cu. From the observed K X-ray yields, K-shell vacancy production cross sections averaged over the target thickness t of projectile sigmasub(KV) and target sigmasup(*)sub(KV) were separately derived taking into account the fluorescence yield that can be estimated from the Ksub(α) X-ray energy shift. When the values of sigmasub(KV) and sigmasup(*)sub(KV) are extrapolated to zero foil thickness, the K shell vacancy formed in the collision has been found to be equally shared between projectile and target in a single collision. With the increase of penetration depth, however, the values of sigmasup(*)sub(KV) are greater than those of sigmasub(KV) presumably due to electron transfer of a target K electron to the projectile K vacancy. The evolution process of projectile excited states as a function of target thickness and the resulting variation of projectile and target K X-ray emissions are discussed. (orig.)

  12. Formation of oxides and segregation of mobile atoms during SIMS profiling of Si with oxygen ions

    Energy Technology Data Exchange (ETDEWEB)

    Petravic, M; Williams, J S; Svensson, B G; Conway, M [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

    1994-12-31

    An oxygen beam is commonly used in secondary ion mass spectroscopy (SIMS) analysis to enhance the ionization probability for positive secondary ions. It has been observed, however, that this technique produces in some cases a great degradation of depth resolution. The most pronounced effects have been found for impurities in silicon under oxygen bombardment at angles of incidence smaller than {approx} 30 deg from the surface normal. A new approach is described which involved broadening of SIMS profiles for some mobile atoms, such as Cu, Ni and Au, implanted into silicon. The anomalously large broadening is explained in terms of segregation at a SiO{sub 2}/Si interface formed during bombardment with oxygen at impact angles less than 30 deg. 2 refs., 1 tab., 4 figs.

  13. Formation of oxides and segregation of mobile atoms during SIMS profiling of Si with oxygen ions

    Energy Technology Data Exchange (ETDEWEB)

    Petravic, M.; Williams, J.S.; Svensson, B.G.; Conway, M. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

    1993-12-31

    An oxygen beam is commonly used in secondary ion mass spectroscopy (SIMS) analysis to enhance the ionization probability for positive secondary ions. It has been observed, however, that this technique produces in some cases a great degradation of depth resolution. The most pronounced effects have been found for impurities in silicon under oxygen bombardment at angles of incidence smaller than {approx} 30 deg from the surface normal. A new approach is described which involved broadening of SIMS profiles for some mobile atoms, such as Cu, Ni and Au, implanted into silicon. The anomalously large broadening is explained in terms of segregation at a SiO{sub 2}/Si interface formed during bombardment with oxygen at impact angles less than 30 deg. 2 refs., 1 tab., 4 figs.

  14. A code to determine the energy distribution, the incident energy and the flux of a beam of light ions into a stack of foils

    International Nuclear Information System (INIS)

    Sonzogni, A.A.; Romo, A.S.M.A.; Frosch, W.R.; Nassiff, S.J.

    1992-01-01

    The stacked-foil technique is one of the most used methods to obtain excitation functions of nuclear reactions using light ions as projectiles. The purpose of this program is the calculation of the energy of the beam in the stack, as well as to obtain the incident energy and the flux of the beam by using monitor excitation functions. (orig.)

  15. The timeline of the lunar bombardment: Revisited

    Science.gov (United States)

    Morbidelli, A.; Nesvorny, D.; Laurenz, V.; Marchi, S.; Rubie, D. C.; Elkins-Tanton, L.; Wieczorek, M.; Jacobson, S.

    2018-05-01

    The timeline of the lunar bombardment in the first Gy of Solar System history remains unclear. Basin-forming impacts (e.g. Imbrium, Orientale), occurred 3.9-3.7 Gy ago, i.e. 600-800 My after the formation of the Moon itself. Many other basins formed before Imbrium, but their exact ages are not precisely known. There is an intense debate between two possible interpretations of the data: in the cataclysm scenario there was a surge in the impact rate approximately at the time of Imbrium formation, while in the accretion tail scenario the lunar bombardment declined since the era of planet formation and the latest basins formed in its tail-end. Here, we revisit the work of Morbidelli et al. (2012) that examined which scenario could be compatible with both the lunar crater record in the 3-4 Gy period and the abundance of highly siderophile elements (HSE) in the lunar mantle. We use updated numerical simulations of the fluxes of asteroids, comets and planetesimals leftover from the planet-formation process. Under the traditional assumption that the HSEs track the total amount of material accreted by the Moon since its formation, we conclude that only the cataclysm scenario can explain the data. The cataclysm should have started ∼ 3.95 Gy ago. However we also consider the possibility that HSEs are sequestered from the mantle of a planet during magma ocean crystallization, due to iron sulfide exsolution (O'Neil, 1991; Rubie et al., 2016). We show that this is likely true also for the Moon, if mantle overturn is taken into account. Based on the hypothesis that the lunar magma ocean crystallized about 100-150 My after Moon formation (Elkins-Tanton et al., 2011), and therefore that HSEs accumulated in the lunar mantle only after this timespan, we show that the bombardment in the 3-4 Gy period can be explained in the accretion tail scenario. This hypothesis would also explain why the Moon appears so depleted in HSEs relative to the Earth. We also extend our analysis of the

  16. The repetitive flaking of Inconel 625 by 100 keV helium bombardment

    International Nuclear Information System (INIS)

    Whitton, J.L.; Chen, H.M.; Littmark, U.

    1981-01-01

    Repetitive flaking of Inconel 625 occurs with ion bombardment doses of > than 10 18 100 keV helium ions cm -2 , with up to 39 exfoliations being observed after bombardment with 3 x 10 19 ions cm -2 . The thickness of the flakes, measured by scanning electron microscopy, is some 30% greater than when measured by Rutherford backscattering (RBS) of 1.8 MeV helium ions. These RBS measurements compare well with the thickness of the remaining layers in the resultant craters and to the most probable range of the 100 keV helium. The area of the flakes is dictated by the grain boundaries, and when one flake is ejected, the adjacent grains are prevented from doing so since there now exists an escape route for the injected helium. A strong dose rate dependence is observed; decreasing the beam current from 640 μA cm -2 to 64 μA cm -2 results in a factor 20 fewer flakes being exfoliated (for the same total dose of 3 x 10 19 ions cm -2 ). Successive flakes decrease in area, suggesting that eventually a cratered, but stable, surface will result with the only erosion being by the much less effective mechanism of sputtering. (orig.)

  17. Heavy ion induced disorder introduction in the surface and at shallow depths in Si

    International Nuclear Information System (INIS)

    Roosendaal, H.E.; Weick, M.; Hubbes, H.H.; Lutz, H.O.

    1979-01-01

    Disorder in a Si lattice has been produced by bombardment with 220 and 290 keV C + , N + , Ne + and Ar + ions. The production of surface disorder is compared with the disorder production at shallow depths. For random incidence of the damaging projectiles, the surface disorder has been found to scale with the disorder at shallow depths (380 to 800 A). For channeling incidence, a Z 1 dependent reduction of the surface disorder is observed. This reduction is much smaller than that for the disorder in the depth interval 380 to 800 A. (author)

  18. The terrestrial record of Late Heavy Bombardment

    Science.gov (United States)

    Lowe, Donald R.; Byerly, Gary R.

    2018-04-01

    Until recently, the known impact record of the early Solar System lay exclusively on the surfaces of the Moon, Mars, and other bodies where it has not been erased by later weathering, erosion, impact gardening, and/or tectonism. Study of the cratered surfaces of these bodies led to the concept of the Late Heavy Bombardment (LHB), an interval from about 4.1 to 3.8 billion years ago (Ga) during which the surfaces of the planets and moons in the inner Solar System were subject to unusually high rates of bombardment followed by a decline to present low impact rates by about 3.5 Ga. Over the past 30 years, however, it has become apparent that there is a terrestrial record of large impacts from at least 3.47 to 3.22 Ga and from 2.63 to 2.49 Ga. The present paper explores the earlier of these impact records, providing details about the nature of the 8 known ejecta layers that constitute the evidence for large terrestrial impacts during the earlier of these intervals, the inferred size of the impactors, and the potential effects of these impacts on crustal development and life. The existence of this record implies that LHB did not end abruptly at 3.8-3.7 Ga but rather that high impact rates, either continuous or as impact clusters, persisted until at least the close of the Archean at 2.5 Ga. It implies that the shift from external, impact-related controls on the long-term development of the surface system on the Earth to more internal, geodynamic controls may have occurred much later in geologic history than has been supposed previously.

  19. Monte Carlo simulations of silicon sputtering by argon ions and an approach for comparison with molecular dynamic results

    Energy Technology Data Exchange (ETDEWEB)

    Feder, Rene; Frost, Frank; Mayr, Stefan G.; Neumann, Horst; Bundesmann, Carsten [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Leipzig (Germany)

    2012-07-01

    Ion beam sputter processes deliver some intrinsic features influencing the growing film properties. Utilisation of these features needs to know how primary ion properties and geometrical process conditions influence the energy and spatial distribution of the sputtered and scattered particles. Beside complex experiments simulations are helpful to explain the correlation between primary parameters and thin film properties. The paper presents first results of two simulation codes with completely different approaches: Monte Carlo (MC) calculations with help of the well known TRIM.SP code and Molecular Dynamics calculations with an in-house developed code. First results of both simulation principles are compared for Argon ion bombardment on a Silicon target. Furthermore, a special experimental setup is outlined for validation of modelling. The setup allows the variation of ion beam parameters (ion species, ion energy, ion incidence angle on the target) and the measurement of the properties of sputtered and scattered particles.

  20. Heavy-ion transfer to high-spin states

    International Nuclear Information System (INIS)

    Lauterbach, C.

    1985-01-01

    Transfer reactions between very heavy ions, in particular about systems in which one or both collision partners are well deformed, are studied. These systems are expected to give rise to new phenomena which are related to the fact that the deformed nucleus has been Coulomb excited to a rotational or vibrational state at the time when the collision partners come into contact. In this paper the authors present results of experiments in which nuclei from the rare earth and the actinide region have been bombarded by various projectiles ranging from 34 S to 208 Pb at incident energies close to the Coulomb barrier. (Auth.)

  1. Actinide production from xenon bombardments of curium-248

    International Nuclear Information System (INIS)

    Welch, R.B.

    1985-01-01

    Production cross sections for many actinide nuclides formed in the reaction of 129 Xe and 132 Xe with 248 Cm at bombarding energies slightly above the coulomb barrier were determined using radiochemical techniques to isolate these products. These results are compared with cross sections from a 136 Xe + 248 Cm reaction at a similar energy. When compared to the reaction with 136 Xe, the maxima in the production cross section distributions from the more neutron deficient projectiles are shifted to smaller mass numbers, and the total cross section increases for the production of elements with atomic numbers greater than that of the target, and decreases for lighter elements. These results can be explained by use of a potential energy surface (PES) which illustrates the effect of the available energy on the transfer of nucleons and describes the evolution of the di-nuclear complex, an essential feature of deep-inelastic reactions (DIR), during the interaction. The other principal reaction mechanism is the quasi-elastic transfer (QE). Analysis of data from a similar set of reactions, 129 Xe, 132 Xe, and 136 Xe with 197 Au, aids in explaining the features of the Xe + Cm product distributions, which are additionally affected by the depletion of actinide product yields due to deexcitation by fission. The PES is shown to be a useful tool to predict the general features of product distributions from heavy ion reactions

  2. Crystalline self-assembly of organic molecules with metal ions at the air-aqueous solution interface. A grazing incidence X-ray scattering study

    DEFF Research Database (Denmark)

    Weissbuch, I.; Buller, R.; Kjær, K.

    2002-01-01

    The advent of intense X-rays from synchrotron sources made possible to probe, at the molecular level, the structural aspects of self-assemblies generated at interfaces. Here we present the two-dimensional (2-D) packing arrangements of two-, three- and multi-component organo-metallic self......-assemblies formed via interfacial reaction at the air-aqueous solution interface, as determined by grazing incidence X-ray diffraction (GIRD) and X-ray specular reflectivity techniques. GIXD yields structural information on the crystalline part of the Langmuir film, including the ions and counterions lateral order...... of metal ions bound to the polar head groups of amphipilic molecules; use of bolaamphiphiles to generate oriented thin films with metal ions arranged in periodic layers; delineation of differences in the lateral organization of metal ions at interfaces as induced by racemates and enantiomerically pure...

  3. Deuterium pumping and erosion behavior of selected graphite materials under high flux plasma bombardment in PISCES

    International Nuclear Information System (INIS)

    Hirooka, Y.; Conn, R.W.; Goebel, D.M.; LaBombard, B.; Lehmer, R.; Leung, W.K.; Nygren, R.E.; Ra, Y.

    1988-06-01

    Deuterium plasma recycling and chemical erosion behavior of selected graphite materials have been investigated using the PISCES-A facility. These materials include: Pyro-graphite; 2D-graphite weave; 4D-graphite weave; and POCO-graphite. Deuterium plasma bombardment conditions are: fluxes around 7 /times/ 10 17 ions s/sup /minus/1/cm/sup /minus/2/; exposure time in the range from 10 to 100 s; bombarding energy of 300 eV; and graphite temperatures between 20 and 120/degree/C. To reduce deuterium plasma recycling, several approaches have been investigated. Erosion due to high-fluence helium plasma conditioning significantly increases the surface porosity of POCO-graphite and 4D-graphite weave whereas little change for 2D-graphite weave and Pyro-graphite. The increased pore openings and refreshed in-pore surface sites are found to reduce the deuterium plasma recycling and chemical erosion rates at transient stages. The steady state recycling rates for these graphite materials can be also correlated to the surface porosity. Surface topographical modification by machined-grooves noticeably reduces the steady state deuterium recycling rate and the impurity emission from the surface. These surface topography effects are attributed to co-deposition of remitted deuterium, chemically sputtered hydrocarbon and physically sputtered carbon under deuterium plasma bombardment. The co-deposited film is found to have a characteristic surface morphology with dendritic microstructures. 18 ref., 4 figs., 1 tab

  4. Evolution of direct mechanisms with incident energy from the Coulomb-barrier to relativistic energies. - Two-center effects in nucleon transfer between nuclei. - Signatures of nucleon promotion in heavy ion reactions at barrier energies

    International Nuclear Information System (INIS)

    Oertzen, W. von; Voit, H.; Imanishi, B.

    1988-10-01

    This report contains a review article considering the evolution of direct mechanisms with incident energy in heavy ion reactions and two theoretical articles concerning two-center effects in transfer reactions between heavy ions and the nucleon promotion in heavy ion reactions. See hints under the relevant topics. (HSI)

  5. On application of ion-photon emission method in spectral analysis of surface of different materials

    International Nuclear Information System (INIS)

    Bazhin, A.I.; Buravlev, Yu.M.; Ryzhov, V.N.

    1983-01-01

    Possibilities of application of ion-photom emission (IPE) method for determining element composition of the aluminium bronzes surface and profiles of distribution of hydrogen and helium implanted in metals (Mon Wn Cun Aln OKh18N10T steel) by ion bombardment have been studied. As ion source duoplasmatron which permits to obtain ions of inert (helium, argon) and active (hydrogenn oxygen) gases with current density 0.1-1 mA/cm 2 in the beam and energy from 5 to 25 keV has been applied. The photomultiplier PEM-79 has been used as a detector of optical radiation arising in the course of ion bombardment of the sample. For spectra recording the two-coordinate recorder has been used. Calibration charts which permit to determine the concentration of the investigated elements with 3-5% accuracy are obtained. The method sensitivity depends on excitation energy of transition observed in the spectrum. By known volumetric element concentration in the sample one can determine its concentration on a sUrface without resorting to a calibration chart in the coUrse of target sputtering. It has been found that the target impurity sputtering coefficient becomes nonselective to their relatiVe content. At wide incidence angles of ion beam. In contrast to other excitation methods (arc, spark) the IPE method possesses locality which constitutes 1 μm at a quite simple method of ion beam focussing (single lens)

  6. Cluster induced chemistry at solid surfaces: Molecular dynamics simulations of keV C60 bombardment of Si

    International Nuclear Information System (INIS)

    Krantzman, K.D.; Kingsbury, D.B.; Garrison, Barbara J.

    2007-01-01

    Molecular dynamics simulations of the sputtering of Si by keV C 60 bombardment have been performed as a function of incident kinetic energy at two incident angles, normal incidence and 45 deg. Nearly all of the C atoms remain embedded in the surface after bombardment because the C atoms from the projectile form strong covalent bonds with the Si atoms in the target. At low incident kinetic energies, the sputtering yield of Si atoms is small and there is a net deposition of solid material from the projectile atoms. As the incident kinetic energy is increased, the yield of sputtered Si atoms increases. A transition occurs in which the yield of sputtered Si atoms exceeds the number of C atoms deposited, and there is a net erosion of the solid material. A significantly higher sputter yield is observed at an incident angle of 45 deg. than at normal incidence, and therefore, the energy value is lower for the transition from net deposition to net erosion. This phenomenon is discussed in terms of the depth distribution of deposited energy, which is found to be shallower at an incident angle of 45 deg

  7. A compact CMA spectrometer with axially integrated hybrid electron-ion gun for ISS, AES and sputter depth profile analysis

    International Nuclear Information System (INIS)

    Gisler, E.; Bas, E.B.

    1986-01-01

    Until now, the combined application of electrons and ions in surface analysis required two separate sources for electrons and ions with different incidence angles. The newly developed hybrid electron-ion gun, however, allows bombardment of the same sample area both with noble gas ions and with electrons coming from the same direction. By integrating such a hybrid gun axially in a cylindrical mirror energy analyser (CMA) a sensitive compact single flange spectrometer obtains for ion scattering spectroscopy (ISS), Auger electron spectroscopy (AES), and sputtering all within normal beam incidence. This concept makes accurate beam centering very easy. Additionally, the bombardment from the same direction both for sputtering and for surface analysis brings advantages in depth profiling. The scattering angle for ISS has a constant value of about 138 0 . The hybrid gun delivers typically an electron beam current of -20μA at 3keV for AES, and an ion beam current of +40 nA and +1.2μA at 2 keV for ISS and sputtering respectively. The switching time between ISS, AES, and sputtering mode is about 0.1 s. So this system is best suited for automatically controlled depth profile analysis. The design and operation of this new system will be described and some applications will be discussed. (author)

  8. Search for superheavy elements in the bombardment of 248Cm with 48Ca

    International Nuclear Information System (INIS)

    Hulet, E.K.; Lougheed, R.W.; Wild, J.F.; Landrum, J.H.; Stevenson, P.C.; Ghiorso, A.; Nitschke, J.M.; Otto, R.J.; Morrissey, D.J.; Baisden, P.A.; Gavin, B.F.; Lee, D.; Silva, R.J.; Fowler, M.M.; Seaborg, G.T.

    1977-01-01

    We have searched for superheavy elements 110 to 116 with half-lives between 10 4 and 10 8 s in fractions chemically separated after each of a series of bombardments of 248 Cm made with 267-MeV 48 Ca ions. After 6 months of α and spontaneous-fission counting, our results provide no persuasive evidence for the presence of super-heavy elements. The most plausible explanation for not finding the superheavy elements is that they have either short half-lives or very small formation cross sections

  9. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  10. The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

    Energy Technology Data Exchange (ETDEWEB)

    Koehl, Dominik

    2011-02-17

    The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

  11. The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

    International Nuclear Information System (INIS)

    Koehl, Dominik

    2011-01-01

    The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

  12. Study and optimisation of SIMS performed with He+ and Ne+ bombardment

    International Nuclear Information System (INIS)

    Pillatsch, L.; Vanhove, N.; Dowsett, D.; Sijbrandij, S.; Notte, J.; Wirtz, T.

    2013-01-01

    The combination of the high-brightness He + /Ne + atomic level ion source with the detection capabilities of secondary ion mass spectrometry (SIMS) opens up the prospect of obtaining chemical information with high lateral resolution and high sensitivity on the Zeiss ORION helium ion microscope (HIM). A feasibility study with He + and Ne + ion bombardment is presented in order to determine the performance of SIMS analyses using the HIM. Therefore, the sputtering yields, useful yields and detection limits obtained for metallic (Al, Ni and W) as well as semiconductor samples (Si, Ge, GaAs and InP) were investigated. All the experiments were performed on a Cameca IMS4f SIMS instrument which was equipped with a caesium evaporator and oxygen flooding system. For most of the elements, useful yields in the range of 10 −4 to 3 × 10 −2 were measured with either O 2 or Cs flooding. SIMS experiments performed directly on the ORION with a prototype secondary ion extraction and detection system lead to results that are consistent with those obtained on the IMS4f. Taking into account the obtained useful yields and the analytical conditions, such as the ion current and typical dwell time on the ORION HIM, detection limits in the at% range and better can be obtained during SIMS imaging at 10 nm lateral resolution with Ne + bombardment and down to the ppm level when a lateral resolution of 100 nm is chosen. Performing SIMS on the HIM with a good detection limit while maintaining an excellent lateral resolution (<50 nm) is therefore very promising.

  13. Incidence Angle Effect of Energetic Carbon Ions on Deposition Rate, Topography, and Structure of Ultrathin Amorphous Carbon Films Deposited by Filtered Cathodic Vacuum Arc

    KAUST Repository

    Wang, N.

    2012-07-01

    The effect of the incidence angle of energetic carbon ions on the thickness, topography, and structure of ultrathin amorphous carbon (a-C) films synthesized by filtered cathodic vacuum arc (FCVA) was examined in the context of numerical and experimental results. The thickness of a-C films deposited at different incidence angles was investigated in the light of Monte Carlo simulations, and the calculated depth profiles were compared with those obtained from high-resolution transmission electron microscopy (TEM). The topography and structure of the a-C films were studied by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The film thickness decreased with the increase of the incidence angle, while the surface roughness increased and the content of tetrahedral carbon hybridization (sp 3) decreased significantly with the increase of the incidence angle above 45° , measured from the surface normal. TEM, AFM, and XPS results indicate that the smoothest and thinnest a-C films with the highest content of sp 3 carbon bonding were produced for an incidence angle of 45°. The findings of this study have direct implications in ultrahigh-density magnetic recording, where ultrathin and smooth a-C films with high sp 3 contents are of critical importance. © 2012 IEEE.

  14. Heavy-ion targets

    International Nuclear Information System (INIS)

    Adair, H.L.; Kobisk, E.H.

    1985-01-01

    This chapter examines the characteristics of targets required in heavy-ion accelerator physics experiments. The effects of target parameters on heavy-ion experimental results are reviewed. The target fabrication and characterization techniques used to minimize experimental problems during heavy-ion bombardment are described. Topics considered include target thickness and uniformity, target lifetime, target purity, substrate materials, Doppler shift effects, metal preparations, and target preparation methods

  15. Secondary ion shadow-cone enhanced desorption

    Energy Technology Data Exchange (ETDEWEB)

    Chechen Chang (Hawaii Univ., Honolulu (USA). Dept. of Chemistry)

    1990-02-01

    The incident angle dependence of the secondary particle emission process under keV ion bombardment has been investigated. The results from the full molecular dynamics calculations indicate that the flux anisotropy of the incident beam, resulting from the non-uniform impact parameters for the surface atom of a single crystal, affects the particle desorption in a systematic fashion. The enhanced desorption at certain angles of incidence corresponds to the intensive focusing of the incident beam to the near-surface atom and the extended dissipation of momentum by large-angle scattering. This observation has let us to develop a new theoretical model in which the enhanced desorption is described by the distance of closest encounter along the trajectory of the incident particle to the surface atom. The computer time for the simulation of the incident-angle-dependent emission process is significantly reduced. The results from the calculation based on this model are in good agreement both with the results from the full dynamics calculation and with the experimental results. The new model also allows a complementary evaluation of the microscopic dynamics involved in the shadow-cone enhanced desorption. (author).

  16. Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography.

    Science.gov (United States)

    Gnaser, Hubert; Radny, Tobias

    2015-12-01

    Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18)cm(-2) and ion flux densities f of (0.4-2) × 10(14) cm(-2) s(-1) were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3-1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of Pn cluster ions was observed, with n ≤ 11. Copyright © 2015. Published by Elsevier B.V.

  17. Negative secondary ion emission from oxidized surfaces

    International Nuclear Information System (INIS)

    Gnaser, H.; Kernforschungsanlage Juelich G.m.b.H.

    1984-01-01

    The emission of negative secondary ions from 23 elements was studied for 10 keV O 2 + and 10 keV In + impact at an angle of incidence of 45 0 . Partial oxidation of the sample surfaces was achieved by oxygen bombardment and/or by working at a high oxygen partial pressure. It was found that the emission of oxide ions shows an element-characteristic pattern. For the majority of the elements investigated these features are largely invariant against changes of the surface concentration of oxygen. For the others admission of oxygen strongly changes the relative intensities of oxide ions: a strong increase of MO 3 - signals (M stands for the respective element) is accompanied by a decrease of MO - and M - intensities. Different primary species frequently induce changes of both the relative and the absolute negative ion intensities. Carbon - in contrast to all other elements - does not show any detectable oxide ion emission but rather intense cluster ions Csub(n) - (detected up to n=12) whose intensities oscillate in dependence on n. (orig./RK)

  18. Residual stress in ion implanted titanium nitride studied by parallel beam glancing incidence x-ray diffraction

    International Nuclear Information System (INIS)

    Geist, D.E.; Perry, A.J.; Treglio, J.R.; Valvoda, V.; Rafaja, D.

    1995-01-01

    Ion implantation is known to increase the lifetime of cutting tools. Current theories are the increase in lifetime is caused by an increase in the residual stress, or by work hardening of the surface associated with the implantation. In this work the effect of ion implantation on the residual stress in titanium nitride coatings made by the standard industrial methods of chemical and physical vapor deposition (CVD and PVD) is studied. It is found in the as-received condition (unimplanted), the residual stress levels are near zero for CVD materials and highly compressive, of the order of 6 GPa, for PVD materials. Ion implantation has no effect on the residual stress in the coatings made by CVD. Nitrogen does increase the compressive residual stress by some 10% in the near surface regions of PVD coatings, while nickel-titanium dual metal ion implantation does not have any effect. It appears that the lifetime increase is not associated with residual stress effects

  19. Measurement of track opening contours of oblique incident 4He and 7Li-ions in CR-39: Relevance for calculation of track formation parameters

    International Nuclear Information System (INIS)

    Hermsdorf, D.; Reichelt, U.

    2010-01-01

    Solid State Nuclear Track Detectors (SSNTD) irradiated in realistic radiation fields exhibits after chemical etching very complex track images resulting from different species of particles and their energy spectra and randomly distributed angles of incidence or emission. Reading out such an etched detector surface with a light microscope, quite different track opening contours are observed. Beside the number of tracks, typically their major and minor axes are measured. In this work following problems arising from such experimental situations will be investigated: ·the measurement of track contour parameters for oblique incident 4 He and 7 Li-ions of different energies and angles in CR-39 detectors ·the theoretical description of the angular variation of both axes. ·the possibility to extract physical and spectroscopic information from major and minor track axes. This analysis is based on an intensive experimental program and the comprehensive study of theoretical models available for description of track revealing processes in CR-39.

  20. Cross sections for pion, proton, and heavy-ion production from 800 MeV protons incident upon aluminum and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dicello, J.F. (Clarkson Univ., Potsdam, NY (USA)); Schillaci, M.E.; Liu Lonchang (Los Alamos National Lab., NM (USA))

    1990-01-01

    When high-energy cosmic rays interact with electronics or other materials in a spacecraft, including the occupants themselves, pions are produced as secondary particles. These secondary pions interact further in the materials producing nuclear secondaries, including nuclear recoils and heavy-ion tertiaries. The secondary pions and the the tertiary particles are capable of producing single-event upsets and other damage in integrated circuits and damage in biological systems. Negative pions stopping in materials are particularly effective because of their unique ability to produce short-range heavy particles from pion stars. With the Los Alamos National Laboratory's version of the intranuclear cascade evaporation code, VEGAS, we have calculated the number of pions produced per energy interval per incident proton from 800 MeV protons on aluminum-27 and silicon-28 along with corresponding results for neutrons, protons, and heavier ions. (orig.).

  1. Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA

    Science.gov (United States)

    Tonfat, Jorge; Kastensmidt, Fernanda Lima; Artola, Laurent; Hubert, Guillaume; Medina, Nilberto H.; Added, Nemitala; Aguiar, Vitor A. P.; Aguirre, Fernando; Macchione, Eduardo L. A.; Silveira, Marcilei A. G.

    2017-08-01

    This paper shows the impact of low linear energy transfer heavy ions on the reliability of 28-nm Bulk static random access memory (RAM) cells from Artix-7 field-programmable gate array. Irradiation tests on the ground showed significant differences in the multiple bit upset cross section of configuration RAM and block RAM memory cells under various angles of incidence and rotation of the device. Experimental data are analyzed at transistor level by using the single-event effect prediction tool called multiscale single-event phenomenon prediction platform coupled with SPICE simulations.

  2. Impact and spreading behavior of cluster atoms bombarding substrates

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Te-Hua, E-mail: fang.tehua@msa.hinet.net [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China); Kang, Shao-Hui; Liao, Jia-Hung [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)

    2009-12-15

    The purpose of this study is to investigate the behavior of copper cluster atoms bombarding a substrate using molecule dynamics based on tight-binding second moment approximation (TB-SMA) potential. The simulated results show that a crater on the substrate surface was created by the impact of the clusters. The variations of kinetic energy of cluster bombardments can be divided into three stages. At the initial impact level, the kinetic energies of the clusters and the substrate were constant. Then, the system went into a sluggish stage of energy variation, in which the kinetic energy of the clusters reduced. In the final stage, the kinetic energy of the system became stable. The high slip vector region around the crater had a disorder damage zone. The symmetry-like cross-slip occurred beneath the top layer of the substrate along the <1 1 0> orientations. The spreading index, temperature, and potential functions that affect the bombardments are also discussed.

  3. Impact and spreading behavior of cluster atoms bombarding substrates

    International Nuclear Information System (INIS)

    Fang, Te-Hua; Kang, Shao-Hui; Liao, Jia-Hung

    2009-01-01

    The purpose of this study is to investigate the behavior of copper cluster atoms bombarding a substrate using molecule dynamics based on tight-binding second moment approximation (TB-SMA) potential. The simulated results show that a crater on the substrate surface was created by the impact of the clusters. The variations of kinetic energy of cluster bombardments can be divided into three stages. At the initial impact level, the kinetic energies of the clusters and the substrate were constant. Then, the system went into a sluggish stage of energy variation, in which the kinetic energy of the clusters reduced. In the final stage, the kinetic energy of the system became stable. The high slip vector region around the crater had a disorder damage zone. The symmetry-like cross-slip occurred beneath the top layer of the substrate along the orientations. The spreading index, temperature, and potential functions that affect the bombardments are also discussed.

  4. High-resolution grazing-incidence grating spectrometer for temperature measurements of low-Z ions emitting in the 100-300 Å spectral banda)

    Science.gov (United States)

    Widmann, K.; Beiersdorfer, P.; Magee, E. W.; Boyle, D. P.; Kaita, R.; Majeski, R.

    2014-11-01

    We have constructed a high-resolution grazing-incidence spectrometer designed for measuring the ion temperature of low-Z elements, such as Li+ or Li2 +, which radiate near 199 Å and 135 Å, respectively. Based on measurements at the Livermore Electron Beam Ion Trap we have shown that the instrumental resolution is better than 48 mÅ at the 200 Å setting and better than 40 mÅ for the 135-Å range. Such a high spectral resolution corresponds to an instrumental limit for line-width based temperature measurements of about 45 eV for the 199 Å Li+ and 65 eV for the 135 Å Li2 + lines. Recently obtained survey spectra from the Lithium Tokamak Experiment at the Princeton Plasma Physics Laboratory show the presence of these lithium emission lines and the expected core ion temperature of approximately 70 eV is sufficiently high to demonstrate the feasibility of utilizing our high-resolution spectrometer as an ion-temperature diagnostic.

  5. High-resolution grazing-incidence grating spectrometer for temperature measurements of low-Z ions emitting in the 100–300 Å spectral band

    Energy Technology Data Exchange (ETDEWEB)

    Widmann, K., E-mail: widmann1@llnl.gov; Beiersdorfer, P.; Magee, E. W. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Boyle, D. P.; Kaita, R.; Majeski, R. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States)

    2014-11-15

    We have constructed a high-resolution grazing-incidence spectrometer designed for measuring the ion temperature of low-Z elements, such as Li{sup +} or Li{sup 2+}, which radiate near 199 Å and 135 Å, respectively. Based on measurements at the Livermore Electron Beam Ion Trap we have shown that the instrumental resolution is better than 48 mÅ at the 200 Å setting and better than 40 mÅ for the 135-Å range. Such a high spectral resolution corresponds to an instrumental limit for line-width based temperature measurements of about 45 eV for the 199 Å Li{sup +} and 65 eV for the 135 Å Li{sup 2+} lines. Recently obtained survey spectra from the Lithium Tokamak Experiment at the Princeton Plasma Physics Laboratory show the presence of these lithium emission lines and the expected core ion temperature of approximately 70 eV is sufficiently high to demonstrate the feasibility of utilizing our high-resolution spectrometer as an ion-temperature diagnostic.

  6. Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence

    International Nuclear Information System (INIS)

    Zolnai, Z.; Ster, A.; Khanh, N. Q.; Battistig, G.; Lohner, T.; Gyulai, J.; Kotai, E.; Posselt, M.

    2007-01-01

    The influence of crystallographic orientation and ion fluence on the shape of damage distributions induced by 500 keV N + implantation at room temperature into 6H-SiC is investigated. The irradiation was performed at different tilt angles between 0 degree sign and 4 degree sign with respect to the crystallographic axis in order to consider the whole range of beam alignment from channeling to random conditions. The applied implantation fluence range was 2.5x10 14 -3x10 15 cm -2 . A special analytical method, 3.55 MeV 4 He + ion backscattering analysis in combination with channeling technique (BS/C), was employed to measure the disorder accumulation simultaneously in the Si and C sublattices of SiC with good depth resolution. For correct energy to depth conversion in the BS/C spectra, the average electronic energy loss per analyzing He ion for the axial channeling direction was determined. It was found that the tilt angle of nitrogen implantation has strong influence on the shape of the induced disorder profiles. Significantly lower disorder was found for channeling than for random irradiation. Computer simulation of the measured BS/C spectra showed the presence of a simple defect structure in weakly damaged samples and suggested the formation of a complex disorder state for higher disorder levels. Full-cascade atomistic computer simulation of the ion implantation process was performed to explain the differences in disorder accumulation on the Si and C sublattices. The damage buildup mechanism was interpreted with the direct-impact, defect-stimulated amorphization model in order to understand damage formation and to describe the composition of structural disorder versus the ion fluence and the implantation tilt angle

  7. High current density ion source

    International Nuclear Information System (INIS)

    King, H.J.

    1977-01-01

    A high-current-density ion source with high total current is achieved by individually directing the beamlets from an electron bombardment ion source through screen and accelerator electrodes. The openings in these screen and accelerator electrodes are oriented and positioned to direct the individual beamlets substantially toward a focus point. 3 figures, 1 table

  8. Project of an ion thruster

    International Nuclear Information System (INIS)

    Perche, G.E.

    1983-07-01

    The mercury bombardment electrostatic ion thruster is the most successful electric thruster available today. This work describes a 5 cm diameter ion thruster with 3.000 s specific impulse and 5 mN thrust. The advantages of electric propulsion and the tests that will be performed are also presented. (Author) [pt

  9. Anomalous heat evolution of deuteron implanted Al on electron bombardment

    International Nuclear Information System (INIS)

    Kamada, K.; Kinoshita, H.; Takahashi, H.

    1994-05-01

    Anomalous heat evolution was observed in deuteron implanted Al foils on 175 keV electron bombardment. Local regions with linear dimension of several 100nm showed simultaneous transformation from single crystalline to polycrystalline structure instantaneously on the electron bombardment, indicating the temperature rise up to more than melting point of Al from room temperature. The amount of energy evolved was more than 180 MeV for each transformed region. The transformation was never observed in proton implanted Al foils. The heat evolution was considered due to a nuclear reaction in D 2 molecular collections. (author)

  10. Heavy ion induced DNA transfer in biological cells

    International Nuclear Information System (INIS)

    Vilaithong, T.; Yu, L.D.; Apavatjrut, P.; Phanchaisri, B.; Sangyuenyongpipat, S.; Anuntalabhochai, S.; Brown, I.G.

    2004-01-01

    Low-energy ion beam bombardment of biological materials for genetic modification purposes has experienced rapid growth in the last decade, particularly for the direct DNA transfer into living organisms including both plants and bacteria. Attempts have been made to understand the mechanisms involved in ion-bombardment-induced direct gene transfer into biological cells. Here we summarize the present status of the application of low-energy ions for genetic modification of living sample materials

  11. Irradiation characteristics of metal-cluster-complex ions containing diverse multi-elements with large mass differences

    International Nuclear Information System (INIS)

    Fujiwara, Yukio; Kondou, Kouji; Teranishi, Yoshikazu; Nonaka, Hidehiko; Saito, Naoaki; Fujimoto, Toshiyuki; Kurokawa, Akira; Ichimura, Shingo; Tomita, Mitsuhiro

    2007-01-01

    Tetrairidium dodecacarbonyl, Ir 4 (CO) 12 , is a metal cluster complex which has a molecular weight of 1104.9. Using a metal-cluster-complex ion source, the interaction between Ir 4 (CO) n + ions (n=0-12) and silicon substrates was studied at a beam energy ranging from 2keV to 10keV at normal incidence. By adjusting Wien-filter voltage, the influence of CO ligands was investigated. Experimental results showed that sputtering yield of silicon bombarded with Ir 4 (CO) n + ions at 10keV decreased with the number of CO ligands. In the case of 2keV, deposition tended to be suppressed by removing CO ligands from the impinging cluster ions. The influence of CO ligands was explained by considering changes in surface properties caused by the irradiation of Ir 4 (CO) n + ions. It was also found that the bombardment with Ir 4 (CO) 7 + ions at 2.5keV caused deposition on silicon target

  12. Aerosol composition studies using accelerator proton bombardment

    International Nuclear Information System (INIS)

    Nelson, J.W.; Winchester, J.W.; Akselsson, R.

    1974-01-01

    The proton beam of the Florida State University Tandem Van de Graaff Accelerator is being used to make quantitative determinations of the composition of particulate matter found in the atmosphere. Proton scattering using 16 MeV incident particle energy is employed to resolve the light elements (up to Cl), while elements Al and heavier are observed via proton induced x-ray emission analysis. In order to realize advantages of these proton excited analyses, specialized techniques are used, such as the use of uniform beams which entirely cover the area of targets of nonuniform areal density. Also, specialized air sampling equipment was built to take advantage of the small size of samples required for proton-induced analyses. The multielement character, ease of automation, and short time (several minutes) needed for analysis make these techniques attractive from the standpoint of analysis cost per sample

  13. Effect of substrate thickness on ejection of phenylalanine molecules adsorbed on free-standing graphene bombarded by 10 keV C{sub 60}

    Energy Technology Data Exchange (ETDEWEB)

    Golunski, M. [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Krakow (Poland); Verkhoturov, S.V.; Verkhoturov, D.S.; Schweikert, E.A. [Department of Chemistry, Texas A& M University, College Station, TX 77840 (United States); Postawa, Z., E-mail: zbigniew.postawa@uj.edu.pl [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Krakow (Poland)

    2017-02-15

    Highlights: • Substrate thickness has a prominent effect on the molecular ejection mechanism. • Collisions with projectile atoms leads to molecular ejection at thin substrates. • Interactions with deforming graphene sheet ejects molecules from thicker substrates. • Probability of fragmentation process decreases with the graphene substrate thickness. - Abstract: Molecular dynamics computer simulations have been employed to investigate the effect of substrate thickness on the ejection mechanism of phenylalanine molecules deposited on free-standing graphene. The system is bombarded from the graphene side by 10 keV C{sub 60} projectiles at normal incidence and the ejected particles are collected both in transmission and reflection directions. It has been found that the ejection mechanism depends on the substrate thickness. At thin substrates mostly organic fragments are ejected by direct collisions between projectile atoms and adsorbed molecules. At thicker substrates interaction between deforming topmost graphene sheet and adsorbed molecules becomes more important. As this process is gentle and directionally correlated, it leads predominantly to ejection of intact molecules. The implications of the results to a novel analytical approach in Secondary Ion Mass Spectrometry based on ultrathin free-standing graphene substrates and a transmission geometry are discussed.

  14. A statistical analysis of the lateral displacement of Si atoms in molecular dynamics simulations of successive bombardment with 20-keV C{sub 60} projectiles

    Energy Technology Data Exchange (ETDEWEB)

    Krantzman, K.D., E-mail: krantzmank@cofc.edu [Department of Chemistry and Biochemistry, College of Charleston, Charleston, SC 29424 (United States); Cook, E.L. [Department of Chemistry and Biochemistry, College of Charleston, Charleston, SC 29424 (United States); Wucher, A. [Faculty of Physics, University of Duisburg-Essen, 47048 Duisburg (Germany); Garrison, B.J. [Department of Chemistry, The Pennsylvania State University, University Park, PA 16802 (United States)

    2011-07-15

    An important factor that determines the possible lateral resolution in sputter depth profiling experiments is ion induced lateral displacement of substrate atoms. Molecular dynamics (MD) simulations are performed to model the successive bombardment of Si with 20 keV C{sub 60} at normal incidence. A statistical analysis of the lateral displacement of atoms that originate from the topmost layer is presented and discussed. From these results, it is determined that the motion is isotropic and can be described mathematically by a simple diffusion equation. A 'diffusion coefficient' for lateral displacement is determined to be 3.5 A{sup 2}/impact. This value can be used to calculate the average lateral distance moved as a function of the number of impacts. The maximum distance an atom may move is limited by the time that it remains on the surface before it is sputtered. After 800 impacts, 99% of atoms from the topmost layer have been removed, and the average distance moved by these atoms is predicted to be 100 A. Although the behavior can be described mathematically by the diffusion equation, the behavior of the atoms is different than what is thought of as normal diffusion. Atoms are displaced a large distance due to infrequent large hops.

  15. Fertile transgenic wheat from microprojectile bombardment of scutellar tissue.

    Science.gov (United States)

    Becker, D; Brettschneider, R; Lörz, H

    1994-02-01

    A reproducible transformation system for hexaploid wheat was developed based on particle bombardment of scutellar tissue of immature embryos. Particle bombardment was carried out using a PDS 1000/He gun. Plant material was bombarded with the plasmid pDB1 containing the beta-glucuronidase gene (uidA) under the control of the actin-1 promoter of rice, and the selectable marker gene bar (phosphinothricin acetyltransferase) under the control of the CaMV 35S promoter. Selection was carried out using the herbicide Basta (Glufosinate-ammonium). From a total number of 1050 bombarded immature embryos, in seven independent transformation experiments, 59 plants could be regenerated. Putative transformants were screened for enzyme activity by the histochemical GUS assay using cut leaf material and by spraying the whole plants with an aqueous solution of the herbicide Basta. Twelve regenerants survived Basta spraying and showed GUS-activity. Southern-blot analysis indicated the presence of introduced foreign genes in the genomic DNA of the transformants and both marker genes were present in all plants analysed. To date, four plants have been grown to maturity and set seed. Histochemically stained pollen grains showed a 1:1 segregation of the uidA gene in all plants tested. A 3:1 segregation of the introduced genes was demonstrated by enzyme activity tests and Southern blot analysis of R1 plants.

  16. Stable transformation of the oomycete, Phytophthora infestans, using microprojectile bombardment

    DEFF Research Database (Denmark)

    Cvitanich, Cristina; Judelson, Howard S.

    2003-01-01

    Germinated asexual sporangia, zoospores, and mycelia of Phytophthora infestans were transformed to G418-resistance by microprojectile bombardment. After optimization, an average of 14 transformants/shot were obtained, using 10(6) germinated sporangia and gold particles coated with 1 microg...

  17. On the reasons for bombarding uranium with slow neutrons

    International Nuclear Information System (INIS)

    Xu Diyu

    1997-01-01

    Form the concepts of slow neutrons, the binding energy and the excitation energy of complex nuclei, and the activation energy in nuclear fission, the four reasons for bombarding uranium with slow neutrons are summed up. Not only the reasons for uranium fission are brought in light, but also the micromechanism is dealt with

  18. Dating Howardite Melt Clasts: Evidence for an Extended Vestan Bombardment?

    Science.gov (United States)

    Cartwright, J. A.; Hodges, K. V.; Wadhwa, M.; Mittlefehldt, D. W.

    2016-01-01

    Howardites are polymict breccias that, together with eucrites and diogenites (HED), likely originate from the vestan surface (regolith/ megaregolith), and display a heterogeneous distribution of eucritic and diogenitic material. Melt clasts are also present alongside other regolithic features within howardites, and are noteworthy for their compositional variability and appearance. Melt clasts formed by impact events provide a snapshot of the timings and conditions of surface gardening and bombardment on the vestan surface. By dating such clasts, we aim to better constrain the timings of impact events on Vesta, and to establish whether the impact flux in the asteroid belt was similar to that on the Moon. As the Moon is used as the basis for characterising impact models of the inner solar system, it is necessary to verify that apparent wide-scale events are seen in other planetary bodies. In particular, the observed clustering of Apollo melt clast ages between 3.8-4.0 Ga has led to two hypotheses: 1) The Moon was subjected to a sudden event - 'Lunar Cataclysm' or period of 'Late Heavy Bombardment' (LHB), 2) The age cluster represents the end of an epoch of declining bombardment or 'Heavy Bombardment. No consensus has emerged regarding one or other hypothesis. We are testing these hypotheses by seeking evidence for such events in materials other than those derived from the Moon.

  19. Neutron yields from bombardment of α-particles

    International Nuclear Information System (INIS)

    Nakasima, Ryuzo

    1982-09-01

    The thick target neutron yields from bombardment of <10 MeV α-particles are calculated based on the reaction cross sections. The results for the elements of Z < 15 are compared with existing calculated or measured neutron yield data. For the elements of 16 < Z < 50, elemental or isotopic neutron yields are calculated if the cross section data are available. (author)

  20. Ion implantation apparatus

    International Nuclear Information System (INIS)

    Forneris, J.L.; Hicks, W.W.; Keller, J.H.; McKenna, C.M.; Siermarco, J.A.; Mueller, W.F.

    1981-01-01

    The invention relates to ion bombardment or implantation apparatus. It comprises an apparatus for bombarding a target with a beam of ions, including an arrangement for measuring the ion beam current and controlling the surface potential of the target. This comprises a Faraday cage formed, at least in part, by the target and by walls adjacent to, and electrically insulated from, the target and surrounding the beam. There is at least one electron source for supplying electrons to the interior of the Faraday cage and means within the cage for blocking direct rectilinear radiation from the source to the target. The target current is measured and combined with the wall currents to provide a measurement of the ion beam current. The quantity of electrons supplied to the interior of the cage can be varied to control the target current and thereby the target surface potential. (U.K.)

  1. Ion plasma electron gun

    International Nuclear Information System (INIS)

    Wakalopulos, G.

    1976-01-01

    In the disclosed electron gun positive ions generated by a hollow cathode plasma discharge in a first chamber are accelerated through control and shield grids into a second chamber containing a high voltage cold cathode. These positive ions bombard a surface of the cathode causing the cathode to emit secondary electrons which form an electron beam having a distribution adjacent to the cathode emissive surface substantially the same as the distribution of the ion beam impinging upon the cathode. After passing through the grids and the plasma discharge chamber, the electron beam exits from the electron gun via a foil window. Control of the generated electron beam is achieved by applying a relatively low control voltage between the control grid and the electron gun housing (which resides at ground potential) to control the density of the positive ions bombarding the cathode

  2. Variation in emission and energy recovery concerning incident angle in a scheme recovering high energy ions by secondary electrons

    International Nuclear Information System (INIS)

    Wada, Takayuki; Konno, Shota; Nakamoto, Satoshi; Takeno, Hiromasa; Furuyama, Yuichi; Taniike, Akira

    2016-01-01

    As an energy recovery device for fast protons produced in D- 3 He nuclear fusion, secondary electron (SE) direct energy converter (SEDEC) was proposed in addition to traveling wave direct energy converter (TWDEC). Some protons passing through a TWDEC come into an SEDEC, where protons penetrate to a number of foil electrodes and emitted SEs are recovered. Following to a development of SE orbit control by magnetic field, dependence on incident angle of protons was examined to optimize structure of SEDEC. Based on a theoretical expectation, experiments were performed by changing incident angle of protons and variation in emission and energy recovery were measured. Both emission and energy recovery increased as the angle increased, and differences with theoretical expectation are discussed. (author)

  3. Carbon contaminant in the ion processing of aluminum oxide film

    International Nuclear Information System (INIS)

    Chaug, Y.; Roy, N.

    1989-01-01

    Ion processing can induce contamination on the bombarded surface. However, this process is essential for the microelectronics device fabrication. Auger electron spectroscopy has been used to study the simultaneous deposition of carbon impurity during ion bombardment of magnetron rf-sputtering deposited aluminum oxide film. Ion bombardment on aluminum oxide results in a preferential removal of surface oxygen and a formation of a metastable state of aluminum suboxide. Cosputtered implanted carbon contaminant appears to have formed a new state of stoichiometry on the surface of the ion bombarded aluminum oxide and existed as an aluminum carbide. This phase has formed due to the interaction of the implanted carbon and the aluminum suboxide. The Ar + ion sputter etching rate is reduced for the carbon contaminated oxide. The electrical resistance of the aluminum oxide between two gold strips has been measured. It is found that the electrical resistance is also reduced due to the formation of the new stoichiometry on the surface

  4. Ion-assisted sputter deposition of molybdenum--silicon multilayers

    International Nuclear Information System (INIS)

    Vernon, S.P.; Stearns, D.G.; Rosen, R.S.

    1993-01-01

    X-ray multilayer (ML) structures that are fabricated by the use of magnetron-sputter deposition exhibit a degradation in structural quality as the deposition pressure is increased. The observed change in morphology is attributed to a reduced mobility of surface adsorbed atoms, which inhibits the formation of smooth, continuous layers. The application of a negative substrate bias produces ion bombardment of the growing film surface by sputtering gas ions extracted from the plasma and permits direct control of the energy density supplied to the film surface during thin-film growth. The technique supplements the energy lost to thermalization in high-pressure deposition and permits the fabrication of high-quality ML structures at elevated processing pressures. A threefold improvement in the soft-x-ray normal-incidence reflectance at 130 A results for substrate bias voltages of the order of ∼-150 V for Mo--Si ML's deposited at 10-mTorr Ar

  5. Recent advances in heavy-ion-induced fission

    International Nuclear Information System (INIS)

    Plasil, F.

    1984-01-01

    Three topics are discussed. The first deals with results that have been published recently on angular-momentum-dependent fission barriers. They are discussed because of the significance that we attach to them. We feel that, after a decade of study and controversy, we have arrived at a quantitative understanding of the competition between heavy-ion-induced fission and particle emission from compound nuclei at relatively low bombarding energies. The second topic concerns the extension of our heavy-ion-induced fission studies to higher energies. It is clear that in this regime the effects, both of fission following incomplete fusion and of extra-push requirements, need to be considered. Finally, discussed are our recent conclusions concerning the fissionlike decay of products from reactions between two 58 Ni nuclei at an incident energy, E/A, of 15.3 MeV, as well as the impact of our findings on the conclusions drawn from previous, similar measurements. 39 references

  6. Study of the ion sputter-machining, 1

    International Nuclear Information System (INIS)

    Miyamoto, Iwao; Taniguchi, Norio

    1979-01-01

    A lattice disordering of the surface of single crystal silicon due to ion bombardment of Ar + was investigated by the high energy electron diffraction method, with the incident angle of 1.7 0 and 2.8 0 . By this measuring system, the degree of disorders of the sputter-machined surface layer of Si single crystal in the depth of 50 A and 30 A has been determined, under the working conditions of the ion energy ranging from 0.2 keV to 1.5 keV and the incident angle of ion ranging from 0 0 to 75 0 . Moreover, the recovery of lattice disorder of sputter-machined surface layer of Si single crystal by means of the isochronal thermal annealing has been also confirmed by the same method. From the above experiments, the following conclusions are obtained. (1) The layers of sputter-machined surface of Si single crystal workpiece are highly disordered like amorphous, under the working conditions of ion energy ranging from 0.2 keV to 1.5 keV for the vertical ion incident angle. (2) Under the working conditions of ion incident angle larger than 60 0 , using the ion beam with a lower energy under 300 eV, the surface of the workpiece is not disordered. Therefore, a sputter-machined surface of Si single crystal with highly ordered structure can be obtained under this working condition. (3) The recovery of disorder of sputter-machined surface is completed by the heat-treatment of workpiece under isochronal annealing for 1 hour at 800 0 C. However, it is not clear whether this recovery of lattice point or the dispersion of interstitially located argon atoms from the surface to the outside. (author)

  7. Grazing incidence collisions of ions and atoms with surfaces: from charge exchange to atomic diffraction; Collisions rasantes d'ions ou d'atomes sur les surfaces: de l'echange de charge a la diffraction atomique

    Energy Technology Data Exchange (ETDEWEB)

    Rousseau, P

    2006-09-15

    This thesis reports two studies about the interaction with insulating surfaces of keV ions or atoms under grazing incidence. The first part presents a study of charge exchange processes occurring during the interaction of singly charged ions with the surface of NaCl. In particular, by measuring the scattered charge fraction and the energy loss in coincidence with electron emission, the neutralization mechanism is determined for S{sup +}, C{sup +}, Xe{sup +}, H{sup +}, O{sup +}, Kr{sup +}, N{sup +}, Ar{sup +}, F{sup +}, Ne{sup +} and He{sup +}. These results show the importance of the double electron capture as neutralization process for ions having too much potential energy for resonant capture and not enough for Auger neutralization. We have also studied the ionisation of the projectile and of the surface, and the different Auger-like neutralization processes resulting in electron emission, population of conduction band or excited state. For oxygen scattering, we have measured an higher electron yield in coincidence with scattered negative ion than with scattered atom suggesting the transient formation above the surface of the oxygen doubly negative ion. The second study deals with the fast atom diffraction, a new phenomenon observed for the first time during this work. Due to the large parallel velocity, the surface appears as a corrugated wall where rows interfere. Similarly to the Thermal Atom Scattering the diffraction pattern corresponds to the surface potential and is sensitive to vibrations. We have study the H-NaCl and He-LiF atom-surface potentials in the 20 meV - 1 eV range. This new method offers interesting perspectives for surface characterisation. (author)

  8. Production of 95mTc with proton bombardment of 95Mo

    International Nuclear Information System (INIS)

    Izumo, M.; Matsuoka, H.; Sorita, T.; Nagame, Y.; Sekine, T.; Hata, K.; Baba, S.

    1991-01-01

    Formation cross sections of 95m Tc and 95g Tc via the 95 Mo (p,n) reaction have been measured to evaluate the production yield of 95m Tc which is expected to be a useful radiotracer of technetium isotopes. It was found from the cross section data that for incident proton energies above 15 MeV, the thick-target yield of 95m Tc was more than 20 μCi/μAh at the end of bombardment and the 95g Tc contamination was less than 1% after 12 d cooling. To examine the separation and purification of 95m Tc from target, we have carried out a test production of 95m Tc using a thick 95 Mo-enriched target. Other reactions of producing 95m Tc are compared and discussed in terms of the production yield and amounts of contaminants. (author)

  9. Quantitation of stable isotopic tracers of calcium by fast atom bombardment mass spectrometry

    International Nuclear Information System (INIS)

    Jiang, X.; Smith, D.L.

    1987-01-01

    Instrumentation and methodology developed for quantitation of stable isotopic traces in urine are described. Calcium is isolated from urine as the insoluble oxalate salt which is subsequently dissolved in hydrochloric acid. The isotopic content of the acid solution is determined by use of a conventional mass spectrometer equipped with a fast atom bombardment ion source. Calcium ions are desorbed from the sample surface by a beam of high-energy xenon atoms and detected with a high-resolution mass spectrometer. A data acquisition system has been developed to control the mass spectrometer and record the ion signals. Detailed analysis of potential sources of error indicates that the precision of the method is presently limited primarily by an isotope effect that occurs during ion desorption. Results presented here demonstrate that the relative abundances of calcium isotopes in urine can be determined with high precision (coefficient of variation < 0.2%) and that the method is a viable alternative to conventional thermal ionization mass spectrometry. The method is especially attractive because it uses a conventional high-resolution mass spectrometer which is routinely used for analysis of organic substances

  10. Depth profiling using C60+ SIMS-Deposition and topography development during bombardment of silicon

    International Nuclear Information System (INIS)

    Gillen, Greg; Batteas, James; Michaels, Chris A.; Chi, Peter; Small, John; Windsor, Eric; Fahey, Albert; Verkouteren, Jennifer; Kim, K.J.

    2006-01-01

    A C 60 + primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C 60 + depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C 60 + SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C 60 + SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs + SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other unusual topographical features were also observed on silicon substrates after high primary ion dose C 60 + bombardment

  11. Oxidation under electron bombardment. A tool for studying the initial states of silicon oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Carriere, B.; Deville, J.P.; El Maachi, A.

    1987-06-01

    The exciting beam of an Auger electron spectrometer has been used to monitor the oxidation of silicon single crystals at room temperature and very low pressures of oxygen (approx. 10/sup -7/ Torr). This process allows us to build ultra-thin layers of silica on silicon (down to 30 A) but it is mostly used to investigate the mechanisms of the initial stages of oxidation. Auger spectra recorded continuously during the oxidation process provide information on (1) the nature of the silicon-oxygen chemical bonds which are interpreted through fine structure in the Auger peak, and (2) the kinetics of oxide formation which are deduced from curves of Auger signal versus time. An account is given of the contribution of these Auger studies to the description of the intermediate oxide layer during the reaction between silicon and oxygen and the influence of surface structural disorder, induced mainly by argon-ion bombardment, is discussed in terms of reactivity and oxide coverage.

  12. Ion-induced electron emission from clean metals

    International Nuclear Information System (INIS)

    Baragiola, R.A.; Alonso, E.V.; Ferron, J.; Oliva-Florio, A.; Universidad Nacional de Cuyo, San Carlos de Bariloche

    1979-01-01

    We report recent experimental work on electron emission from clean polycrystalline metal surfaces under ion bombardment. We critically discuss existing theories and point out the presently unsolved problems. (orig.)

  13. Versatile computational capability for ion-solid interactions

    International Nuclear Information System (INIS)

    Brice, D.K.

    1976-01-01

    A computational technique for calculating distributions of particles, energy, and damage that result when solids are bombarded with ions is described. The technique can be applied to weapons and energy projects

  14. Experimental measurements of negative hydrogen ion production from surfaces

    International Nuclear Information System (INIS)

    Graham, W.G.

    1977-09-01

    Experimental measurements of the production of H - from surfaces bombarded with hydrogen are reviewed. Some measurements of H + and H 0 production from surfaces are also discussed with particular emphasis on work which might be relevant to ion source applications

  15. Structure of ultrathin films of Co on Cu(111) from normal-incidence x-ray standing wave and medium-energy ion scattering measurements

    International Nuclear Information System (INIS)

    Butterfield, M.T.; Crapper, M.D.; Noakes, T.C.Q.; Bailey, P.; Jackson, G.J.; Woodruff, D.P.

    2000-01-01

    Applications of the techniques of normal-incidence x-ray standing wave (NIXSW) and medium-energy ion scattering (MEIS) to the elucidation of the structure of an ultrathin metallic film, Co on Cu(111), are reported. NIXSW and MEIS are shown to yield valuable and complementary information on the structure of such systems, yielding both the local stacking sequence and the global site distribution. For the thinnest films of nominally two layers, the first layer is of entirely fcc registry with respect to the substrate, but in the outermost layer there is significant occupation of hcp local sites. For films up to 8 monolayers (ML) thick, the interlayer spacing of the Co layers is 0.058±0.006 Aa smaller than the Cu substrate (111) layer spacing. With increasing coverage, the coherent fraction of the (1(bar sign)11) NIXSW decreases rapidly, indicating that the film does not grow in a fcc continuation beyond two layers. For films in this thickness range, hcp-type stacking dominates fcc twinning by a ratio of 2:1. The variation of the (1(bar sign)11) NIXSW coherent fraction with thickness shows that the twinning occurs close to the Co/Cu interface. For thicker films of around 20 ML deposited at room temperature, medium-energy ion scattering measurements reveal a largely disordered structure. Upon annealing to 300 deg. C the 20-ML films order into a hcp structure

  16. Changes in surface morphology and microcrack initiation in polymers under simultaneous exposure to stress and fast atom bombardment

    International Nuclear Information System (INIS)

    Michael, R.S.; Frank, S.; Stulik, D.; Dickinson, J.T.

    1987-01-01

    The authors present studies of the changes in surface morphology due to simultaneous exposure of polymers to stress and fast atom bombardment. The polymers examined were Teflon, Kapton, Nylon, and Kevlar-49. The incident particles were 6 keV xenon atoms. The authors show that in the presence of mechanical stress these polymers show topographical changes at particle doses considerably lower than similar changes produced on unstressed material. Applied stress also promotes the formation of surface microcracks which could greatly reduce mechanical strength of the material

  17. Smooth transition from sudden to adiabatic states in heavy-ion fusion reactions at deep-subbarrier incident energies

    International Nuclear Information System (INIS)

    Takatoshi, Ichikawa; Kouichi, Hagino; Akira, Iwamoto

    2011-01-01

    We propose a novel extension of the standard coupled-channel (CC) model in order to account for the steep falloff of fusion cross sections at deep-subbarrier incident energies. We introduce a damping factor in the coupling potential in the CC model, simulating smooth transitions from sudden to adiabatic states in deep- subbarrier fusion reactions. The CC model extended with the damping factor can reproduce well not only the steep falloff of the fusion cross section but also the saturation of the logarithmic derivatives for the fusion cross sections at deep-subbarrier energies for the 16 O+ 208 Pb, 64 Ni+ 64 Ni, and 58 Ni+ 58 Ni reactions at the deep-subbarrier energies. The important point in our model is that the transition takes place at different places for each Eigen channel. We conclude that the smooth transition from the two-body to the adiabatic one-body potential is responsible for the steep falloff of the fusion cross section

  18. Fractal characterization of the silicon surfaces produced by ion beam irradiation of varying fluences

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, R.P. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); Kumar, T. [Department of Physics, Central University of Haryana, Jant-Pali, Mahendergarh, Haryana 123029 (India); Mittal, A.K. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Dwivedi, S., E-mail: suneetdwivedi@gmail.com [K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, PO Box 10502, New Delhi 110 067 (India)

    2015-08-30

    Highlights: • Fractal analysis of Si(1 0 0) surface morphology at varying ion fluences. • Autocorrelation function and height–height correlation function as fractal measures. • Surface roughness and lateral correlation length increases with ion fluence. • Ripple pattern of the surfaces is found at higher ion fluences. • Wavelength of the ripple surfaces is computed for each fluence. - Abstract: Si (1 0 0) is bombarded with 200 keV Ar{sup +} ion beam at oblique incidence with fluences ranging from 3 × 10{sup 17} ions/cm{sup 2} to 3 × 10{sup 18} ions/cm{sup 2}. The surface morphology of the irradiated surfaces is captured by the atomic force microscopy (AFM) for each ion fluence. The fractal analysis is performed on the AFM images. The autocorrelation function and height–height correlation function are used as fractal measures. It is found that the average roughness, interface width, lateral correlation length as well as roughness exponent increase with ions fluence. The analysis reveals the ripple pattern of the surfaces at higher fluences. The wavelength of the ripple surfaces is computed for each ion fluence.

  19. A high resolution EELS study of free-carrier variations in H2+/H+ bombarded (100)GaAs

    International Nuclear Information System (INIS)

    Dubois, L.H.; Schwartz, G.P.

    1984-01-01

    High resolution electron energy loss spectroscopy (EELS) has been used to examine whether thermal recovery of the near-surface free-carrier concentration in Te-doped (100) GaAs is accomplished following low energy (250--1500 eV) hydrogen ion bombardment. For hydrogen ion impact energies below 500 eV, the nominal bulk free-carrier density is recovered by annealing at 725 K for 2 h. For comparable ion doses, the net free-carrier concentration decreases monotonically at higher impact energies under similar annealing conditions. The threshold for damage retention occurs close to the value of transmitted energy which is necessary to create either a Ga or an As interstitial point defect

  20. Molecular desorption of stainless steel vacuum chambers irradiated with 4.2  MeV/u lead ions

    Directory of Open Access Journals (Sweden)

    E. Mahner

    2003-01-01

    Full Text Available In preparation for the heavy ion program of the Large Hadron Collider at CERN, accumulation and cooling tests with lead ion beams have been performed in the Low Energy Antiproton Ring. These tests have revealed that due to the unexpected large outgassing of the vacuum system, the dynamic pressure of the ring could not be maintained low enough to reach the required beam intensities. To determine the actions necessary to lower the dynamic pressure rise, an experimental program has been initiated for measuring the molecular desorption yields of stainless steel vacuum chambers by the impact of 4.2  MeV/u lead ions with the charge states +27 and +53. The test chambers were exposed either at grazing or at perpendicular incidence. Different surface treatments (glow discharges, nonevaporable getter coating are reported in terms of the molecular desorption yields for H_{2}, CH_{4}, CO, Ar, and CO_{2}. Unexpected large values of molecular yields per incident ion up to 2×10^{4} molecules/ion have been observed. The reduction of the ion-induced desorption yield due to continuous bombardment with lead ions (beam cleaning has been investigated for five different stainless steel vacuum chambers. The implications of these results for the vacuum system of the future Low Energy Ion Ring and possible remedies to reduce the vacuum degradation are discussed.

  1. Dependence of sputtering coefficient on ion dose

    International Nuclear Information System (INIS)

    Colligon, J.S.; Patel, M.H.

    1977-01-01

    The sputtering coefficient of polycrystalline gold bombarded by 10-40 keV Ar + ions had been measured as a function of total ion dose and shown to exhibit oscillations in magnitude between 30 and 100%. Possible experimental errors which would give rise to such an oscillation have been considered, but it is apparent that these factors are unable to explain the measurements. It is proposed that a change in the Sublimation Energy associated with either bulk damage or formation of surface topographical features arising during ion bombardment may be responsible for the observed variations in sputtering coefficient. (author)

  2. Tool steel ion beam assisted nitrocarburization

    International Nuclear Information System (INIS)

    Zagonel, L.F.; Alvarez, F.

    2007-01-01

    The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth

  3. Study of the point defects formed in cobalt by electron bombardment; Etude des defauts ponctuels crees par bombardement electronique dans le cobalt

    Energy Technology Data Exchange (ETDEWEB)

    Sulpice, G [Commissariat a l' Energie Atomique, 38 - Grenoble (France). Centre d' Etudes Nucleaires

    1968-12-01

    A study of the point defects formed in cobalt by electron bombardment is presented. The results are compared with those previously obtained for two other ferromagnetic metals of different structure, iron and nickel. In the first part we give a review of the literature concerning the creation of point defects, their contribution to resistivity and their annihilation mode in the three structure types. We then describe the experimental techniques adapted, in particular the study of the resistivity increase during a linear temperature rise. Our investigations concern the following, essential points : the observation of the successive annihilation stages of the point defects formed in pure cobalt, a study of the variations with respect to the doses and energy of the incident particles, and the determination of the annealing kinetics and the corresponding activation energies. The results are finally compared with the various models of point defect annihilation proposed for other metals: none of these interpretations is in perfect agreement with our results. In the case of cobalt we are thus led to modify the model proposed by our laboratory for iron an nickel. The difference between these three metals is explained by the anisotropic character of the cobalt matrix. (author) [French] Nous presentons une etude des defauts ponctuels crees par bombardement electronique dans le cobalt et comparons nos resultats a ceux obtenus precedemment dans deux autres metaux ferromagnetiques de structure differente, le fer et le nickel. Dans une premiere partie nous faisons une mise au point bibliographique comparee sur la creation des defauts, leur contribution a la resistivite et leur mode d'annihilation dans les trois types de structure. Nous decrivons ensuite les techniques experimentales mises au point, en particulier l'etude du revenu de la resistivite au cours d'une montee lineaire de temperature. Au cours de ce travail, nous avons mis en evidence les stades successifs d

  4. Contribution to the study of point defects formed in nickel by electron bombardment; Contribution a l'etude des defauts ponctuels crees par bombardement electronique dans le nickel

    Energy Technology Data Exchange (ETDEWEB)

    Oddou, J L [Commissariat a l' Energie Atomique, 38 - Grenoble (France). Centre d' Etudes Nucleaires

    1968-12-01

    After a short account of the experimental techniques employed in our studies, the experimental results obtained on pure nickel samples are exposed. The apparition of the successive annihilation stages of point defects created by electron bombardment is established by isochronal heat treatments: the annihilation kinetics and the corresponding activation energies are determined. The effect of the incident particle doses is also studied. The experimental results are then compared with R.A. Johnson's theoretical calculations of the stability and the migration of point defects in nickel, and taking into account the results obtained by Peretto in magnetic after effect measurements. This leads us to a model in good agreement with calculations and experiment for the first stages. In a second chapter the behaviour of nickel doped by certain impurities is studied. First, the results concerning the rate of increase of resistivity (function of sample purity) is investigated. Two possible explanations of the observed phenomenon are proposed: either a deviation with respect to Mathiessen's law, or an increase of the number of defects formed in the presence of impurity atoms. Finally, a study of the resistivity recovery of the doped samples permits us to suggest an order of magnitude for the binding energy interstitial/impurity atom in the nickel matrix. (author) [French] Apres avoir brievement rappele les techniques experimentales que nous avons utilisees pour cette etude, nous exposons les resultats experimentaux obtenus sur des echantillons de nickel pur. Les stades successifs d'annihilation des defauts ponctuels crees par bombardement electronique sont mis en evidence par traitements thermiques isochrones; les cinetiques de disparition, et les energies d'activation correspondantes sont determinees. Nous etudions egalement l'effet de la dose des particules incidentes. Les resultats experimentaux sont ensuite compares avec les calculs theoriques de R.A JOHNSON sur la stabilite

  5. Physico-chemical and mechanical modifications of polyethylene and polypropylene by ion implantation, micro-wave plasma, electron beam radiation and gamma ray irradiation; Modifications physico-chimiques et mecaniques du polyethylene et du polypropylene par implantation ionique, plasma micro-ondes, bombardement d`electrons et irradiation gamma

    Energy Technology Data Exchange (ETDEWEB)

    Liao, J D

    1995-03-29

    A polyolefin surface becomes wettable when treated by micro-wave plasma or low-dose nitrogen ion implantation. A short time argon plasma treatment is sufficient to obtain polarizable peroxides on a polyolefin. X-ray photoelectron spectroscopy analyses, paramagnetic electronic resonance analyses, peroxides decomposition, wettability measurements and infrared active spectra analyses have shown that oxidized structures obtained from different treatment techniques play an important role in the interpretation of surface chemical properties of the polymer. Micro-wave plasma treatment, and in particular argon plasma treatment, yields more polarizable groups than ion implantation and is interesting for grafting. Hardness and elasticity modulus, measured by nano-indentation on a polyolefin, increase with an appropriate ion implantation dose. A 1.4 x 10{sup 17} ions.cm{sup -2} dose can multiply by 15 the hardness of high molecular weight polyethylene, and by 7 the elasticity modulus for a 30 nm depth. The viscous-plastic to quasi-elastic transition is shown. The thickness of the modified layer is over 300 nm. The study of friction between a metal sphere and a polyethylene cupula shows that ion implantation in the polymer creates a reticulated hard and elastic layer which improves its mechanical properties and reduces the erosion rate. Surface treatments on polymers used as biomaterials allow to adapt the surface properties to specific applications. 107 refs., 66 figs., 19 tabs., 4 annexes.

  6. Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

    Science.gov (United States)

    Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

    2012-02-01

    Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

  7. The new generations of power components will depend on neutron and/or electron bombardment techniques

    International Nuclear Information System (INIS)

    Lilen, H.

    1976-01-01

    Neutron and electron bombardment techniques for materials doping, newly introduced in the fabrication of power semiconductor components: diodes, transistors, thyristors, and triacs are briefly outlined. A neutron bombardment of high purity silicon results in a short-lived 31 Si isotope (from 30 Si) decaying into 31 P. The phosphorus with its five peripheral electrons induces a negative doping (N), and the neutron technique gives a homogeneous doping. Furthermore, silicon bombardment with 1 to 2MeV electrons induces micro-ruptures in the lattice, that act as recombination traps reducing carrier lifetimes. Consequently, gold diffusion techniques can be replaced by electron bombardment with a gain in controlling carrier lifetimes [fr

  8. Universality of spectator fragmentation at relativistic bombarding energies

    International Nuclear Information System (INIS)

    Schuettauf, A.; Woerner, A.

    1996-06-01

    Multi-fragment decays of 129 Xe, 197 Au, and 238 U projectiles in collisions with Be, C, Al, Cu, In, Au, and U targets at energies between E/A=400 MeV and 1000 MeV have been studied with the ALADIN forward-spectrometer at SIS. By adding an array of 84 Si-CsI(Tl) telescopes the solid-angle coverage of the setup was extended to θ lab =16 . This permitted the complete detection of fragments from the projectile-spectator source. The dominant feature of the systematic set of data is the Z bound universality that is obeyed by the fragment multiplicities and correlations. These observables are invariant with respect to the entrance channel if plotted as a function of Z bound , where Z bound is the sum of the atomic numbers Z i of all projectile fragments with Z i ≥2. No significant dependence on the bombarding energy nor on the target mass is observed. The dependence of the fragment multiplicity on the projectile mass follows a linear scaling law. The reasons for and the limits of the observed universality of spectator fragmentation are explored within the realm of the available data and with model studies. It is found that the universal properties should persist up to much higher bombarding energies than explored in this work and that they are consistent with universal features exhibited by the intranuclear cascade and statistical multifragmentation models. (orig.)

  9. Flaking and blistering on He and Ne bombardments

    International Nuclear Information System (INIS)

    Kamada, K.; Naramoto, H.

    1979-01-01

    Large scale exfoliation formed by 300 keV He + bombardment of niobium without any preceding blistering is investigated, in comparison with the blistering due to 450 and 850 keV Ne + bombardments. In-situ observations of the erosion processes were performed in a scanning electron microscope connected to the Van de Graaff. Critical doses of 7.2 x 10 17 He + /cm 2 , 2.4 x 10 17 Ne + /cm 2 and 4.0 x 10 17 Ne + /cm 2 were obtained for the 300 keV He flaking, 450 keV Ne blistering and 850 keV Ne blistering, respectively. The He flaking was presumed to be due to brittle fashion peeling-off of the surface layer by the bending moment driven by the internal gas pressure. The blistering, on the other hand, was presumed to be the result of the ductile fashion spreading of the lenticular bubble in the sub-surface layer. The necessary pressure for the peeling-off of the cover was calculated, and was speculated to be able to work as the driving force for the flaking from its unexpectedly low values. Fractographies under the exfoliations were discussed for both flaking and blistering. (author)

  10. Influence of residual Ar+ in Ar cluster ion beam for DLC film formation

    International Nuclear Information System (INIS)

    Kitagawa, Teruyuki; Miyauchi, Kazuya; Toyoda, Noriaki; Kanda, Kazuhiro; Ikeda, Tokumi; Tsubakino, Harushige; Matsuo, Jiro; Matsui, Shinji; Yamada, Isao

    2003-01-01

    In order to study the influences of residual Ar monomer ion (Ar + ) on sp 2 content and hardness of diamond like carbon (DLC) films formed by Ar cluster ion beam assisted deposition, Ar cluster ion, Ar + and their mixed ions (Ar cluster ion and Ar + ) bombardments were performed during evaporation of C 60 . From near edge X-ray absorption fine structure (NEXAFS) and Raman spectroscopy measurements, lower sp 2 content in the carbon films was obtained with Ar cluster ion bombardment than that with Ar + and mixed ion. Furthermore higher hardness and smooth surface were shown with Ar cluster ion bombardments. Therefore it was important to reduce Ar + in Ar cluster ion beams to obtain hard DLC films with flat surface

  11. Ion emission microscope microanalyzer

    International Nuclear Information System (INIS)

    Cherepin, V.T.; Olckovsky, V.L.

    1977-01-01

    In the ion microanalyzer (microprobe) the object is exposed to the bombardment of a highly focused ion beam, the secondary ions emitted from the object being analyzed by means of a mass filter. In order to be able to control the position of an analysis synchronous to the local analysis of an object an ion-optical converter (electron image with a fluorescent screen) is placed behind the aperture diaphragm in the direction of the secondary ion beam. The converter allows to make visible in front of the mass filter a non-split ion image characterizing the surface of the surface investigated. Then a certain section may be selected for performing chemical and isotope analyses. (DG) [de

  12. Study of the mechanisms of heavy-ion induced desorption on accelerator-relevant materials

    International Nuclear Information System (INIS)

    Bender, Markus

    2008-01-01

    The ion beam loss induced desorption is a performance limitation for low charge state heavy ion accelerators. If charge exchanged projectile ions get lost onto the beam pipe, desorption of gas is stimulated resulting in a pressure increase inside of the synchrotron and thus, a dramatically reduction of the beam life time. To minimize the amount of desorbed gas an experimental program has been started to measure the desorption yields (released gas molecules per incident ion) of various materials and different projectile ions. The present work is a contribution to the understanding of the physical processes behind the ion beam loss induced desorption. The yield measurements by the pressure rise method have been combined for the rst time with in situ ion beam analysis technologies such as ERDA and RBS. With this unique method the desorption behavior of a sample can be correlated to its surface and bulk properties. The performed experiments with 1,4 MeV/u Xenon-Ions show that the ion induced desorption is mainly a surface effect. Sputtered oxide layers or impurities do not contribute to the desorbed gas significantly. Nevertheless bulk properties play an important role in the desorption strength. Pure metallic samples desorb less gas than isolating materials under swift heavy ion irradiation. From the experimental results it was possible to estimate the desorption yields of various materials under ion bombardment by means of an extended inelastic thermal-spike-model. The extension is the combination of the thermal-spike's temperature map with thermal desorption. Within this model the ion induced desorption can be regarded as the release of adsorbates from a transient overheated spot on the samples surface around the ion impact. Finally a copper substrate with a gold coated surface was developed and proposed as a suitable material for a beam loss collimator with minimum desorption to ensure the performance of GSI's SIS18 in high current beam operation. (orig.)

  13. Preliminary results on σZ and τint fluctuations as a function of incident energy in dissipative heavy ion collisions

    International Nuclear Information System (INIS)

    Berceanu, I.; Andronic, A.; Duma, M.

    1998-01-01

    Non-statistical fluctuations in the excitation functions (EF) of dissipative heavy ion collisions (DHIC) was rather unexpected due to the fact that cross sections are always obtained on a 'coarse cell' of TKEL and θ cm . The contribution of a large number of microchannels, N, is expected to attenuate the amplitude of such fluctuations as σ(E) has a χ 2 distribution with 2N degrees of freedom. In the framework of the Partially Overlapping Molecular Levels the observation of the fluctuations of the cross section as a function of the incident energy is explained by the fact that the levels of the dinuclear system formed in the first stage of a dissipative process are excited in a region of low density situated in the vicinity of the yrast line. The time evolution of dinuclear (DNS) system with different mass asymmetries with the total mass of the nuclear system 19 F + 27 Al system configuration and its time evolution, the excitation function for this system has been measured between 111.4 MeV and 136.9 MeV with a 250 keV energy step. Fluctuations with amplitude larger than the statistical errors were observed. Large Z and angular cross correlation coefficients show their nonstatistical nature. An average energy correlation width of 170±65 keV, to which corresponds a DNS lifetime τ int (3.9 ± 1.1)·10 -21 s, was obtained by the energy autocorrelation function (EAF). The experimental EAF secondary structure period agrees with that predicted by Kun model when the deformation of the outgoing fragments is taken into account. To get more insight in the reaction mechanism, the dependence of the charge distribution variance for two total kinetic energy loss windows, W1 = 20 ± 2.5 and W2 = 30 ± 2.5 MeV, was obtained as a function of E lab . The second moments of the experimental charge distributions have been calculated and the obtained values were represented for W1 and W2. Fluctuations with quite large amplitude are present. In a transport approach of deep inelastic

  14. Evidence Supporting an Early as Well as Late Heavy Bombardment on the Moon

    Science.gov (United States)

    Frey, Herbert

    2015-01-01

    Evidence supporting an intense early bombardment on the Moon in addition to the traditional Late Heavy Bombardment at approx. 4 BY ago include the distribution of N(50) Crater Retention Ages (CRAs) for candidate basins, a variety of absolute age scenarios for both a "young" and an "old" Nectaris age, and the decreasing contrasts in both topographic relief and Bouguer gravity with increasing CRA.

  15. Neutron production from 158 GeV/c per nucleon lead ions on thin copper and lead targets in the angular range 30-135 deg

    CERN Document Server

    Agosteo, S; Foglio-Para, A; Gini, L; Mitaroff, W A; Silari, Marco; Ulrici, L

    2002-01-01

    The neutron emission from 5, 10 and 20 mm thick lead and 10 and 20 mm thick copper targets bombarded by a lead ion beam with momentum of 158 GeV/c per nucleon were measured at the CERN Super Proton Synchrotron. The neutron yield and spectral fluence per incident ion on target were measured with an extended range Bonner sphere spectrometer in the angular range 30-135 deg. with respect to beam direction. Monte Carlo simulations with the FLUKA code were performed to establish a guess spectrum for the unfolding of the experimental data. The results have shown that, lacking Monte Carlo radiation transport codes dealing with ions with masses larger than 1 amu, a reasonable prediction can be carried out by scaling the result of a Monte Carlo calculation for protons by the projectile mass number to the power of 0.85-0.95 for a lead target and 0.88-1.03 for a copper target.

  16. A Unique Photon Bombardment System for Space Applications

    Science.gov (United States)

    Klein, E. J.

    1993-01-01

    The innovative Electromagnetic Radiation Collection and Concentration System (EMRCCS) described is the foundation for the development of a multiplicity of space and terrestrial system formats. The system capability allows its use in the visual, infrared, and ultraviolet ranges of the spectrum for EM collection, concentration, source/receptor tracking, and targeting. The nonimaging modular optical system uses a physically static position aperture for EM radiation collection. Folded optics provide the concentration of the radiation and source autotracking. The collected and concentrated electromagnetic radiation is utilized in many applications, e.g., solar spectrum in thermal and associative photon bombardment applications for hazardous waste management, water purification, metal hardening, hydrogen generation, photovoltaics, etc., in both space and terrestrial segment utilization. Additionally, at the high end of the concentration capability range, i.e., 60,000+, a solar-pulsed laser system is possible.

  17. Fe embedded in ice: The impacts of sublimation and energetic particle bombardment

    Science.gov (United States)

    Frankland, Victoria L.; Plane, John M. C.

    2015-05-01

    Icy particles containing a variety of Fe compounds are present in the upper atmospheres of planets such as the Earth and Saturn. In order to explore the role of ice sublimation and energetic ion bombardment in releasing Fe species into the gas phase, Fe-dosed ice films were prepared under UHV conditions in the laboratory. Temperature-programmed desorption studies of Fe/H2O films revealed that no Fe atoms or Fe-containing species co-desorbed along with the H2O molecules. This implies that when noctilucent ice cloud particles sublimate in the terrestrial mesosphere, the metallic species embedded in them will coalesce to form residual particles. Sputtering of the Fe-ice films by energetic Ar+ ions was shown to be an efficient mechanism for releasing Fe into the gas phase, with a yield of 0.08 (Ar+ energy=600 eV). Extrapolating with a semi-empirical sputtering model to the conditions of a proton aurora indicates that sputtering by energetic protons (>100 keV) should also be efficient. However, the proton flux in even an intense aurora will be too low for the resulting injection of Fe species into the gas phase to compete with that from meteoric ablation. In contrast, sputtering of the icy particles in the main rings of Saturn by energetic O+ ions may be the source of recently observed Fe+ in the Saturnian magnetosphere. Electron sputtering (9.5 keV) produced no detectable Fe atoms or Fe-containing species. Finally, it was observed that Fe(OH)2 was produced when Fe was dosed onto an ice film at 140 K (but not at 95 K). Electronic structure theory shows that the reaction which forms this hydroxide from adsorbed Fe has a large barrier of about 0.7 eV, from which we conclude that the reaction requires both translationally hot Fe atoms and mobile H2O molecules on the ice surface.

  18. Reduction of the divergence angle of an incident beam to enhance the demagnification factor of a two-stage acceleration lens in a gas ion nanobeam system of several tens of keV

    Science.gov (United States)

    Ishii, Yasuyuki; Kojima, Takuji

    2018-04-01

    The demagnification factor of a two-stage acceleration lens in a gas ion nanobeam system that produces ion beams with energies in the order of 10 keV was enhanced in this study so that a hydrogen ion beam with a diameter of 115 nm could be produced. The reduction of the divergence angle of the incident beam into the two-stage acceleration lens is the effective method for enhancing the demagnification factor. The divergence angle has been gradually reduced by firstly introducing the preacceleration electrodes to control the divergence angle, namely divergence-angle-control electrodes, and secondly replacing an anode with a modified anode that possesses a Pierce electrode, both of which were in an ion source directly connected to the lens. In this study, the divergence angle of less than 3.6 × 10-4 rad that was previously used to produce a 160-nm hydrogen ion beam with the energy of 46 keV by the above procedure was numerically determined using an ion beam extraction simulation code. The determined minimum divergence angle of the incident ion beam was calculated to be 2.0 × 10-4 rad, which was about half of the previously obtained divergence angle; this was used to experimentally form a hydrogen beam with a diameter of 115 ± 10 nm and the energy of 47 keV. The demagnification factor was estimated to be 1,739 using the newly formed hydrogen beam, which was similar to the simulation result.

  19. Electronic excitation effects on secondary ion emission in highly charged ion-solid interaction

    International Nuclear Information System (INIS)

    Sekioka, T.; Terasawa, M.; Mitamura, T.; Stoeckli, M.P.; Lehnert, U.; Fehrenbach, C.

    2001-01-01

    In order to investigate the secondary ion emission from the surface of conductive materials bombarded by highly charged heavy ions, we have done two types of experiments. First, we have measured the yield of the sputtered ions from the surface of solid targets of conductive materials (Al, Si, Ni, Cu) bombarded by Xe q+ (q=15-44) at 300 keV (v p =0.30 a.u) and at 1.0 MeV (v p =0.54 a.u). In view of the secondary ion yields as a function of the potential energy of the projectile, the increase rates below q=35, where the potential energy amounts to 25.5 keV, were rather moderate and showed a prominent increase above q=35. These phenomena were rather strong in the case of the metal targets. Second, we have measured the energy dependence of the yield of the sputtered ions from the surface of solid targets of conductive materials (C, Al) bombarded by Xe q+ (q=30,36,44) between 76 keV (v p =0.15 a.u) and 6.0 MeV (v p =1.3 a.u). A broad enhancement of the secondary ion yield has been found for Al target bombarded by Xe 44+ . From these experimental results, the electronic excitation effects in conductive materials for impact of slow highly charged heavy ions bearing high potential energy is discussed

  20. Tracking of Polycarbonate Films using Low-energy Ions Final Report CRADA No. TC-774-94

    Energy Technology Data Exchange (ETDEWEB)

    Musket, R. G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2018-01-24

    Ion tracking is performed almost exclusively using ions with energies near or above the maximum in electronic stopping. For the present study, we have examined the results of etching ion tracks created by ions bombarding polycarbonate films with energies corresponding to stopping well below the maximum and just above the anticipated threshold for creating etchable latent tracks. Low-energy neon and argon ions with 18-60 keV /amu and fluences of about 108/cm2 were used to examine the limits for producing etchable tracks in polycarbonate films. By concentrating on the early stages of etching (i.e., -20 nm < SEM hole diameter < -100 nm), we can directly relate the energy deposition calculated for the incident ion to the creation of etchable tracks. The experimental results will be discussed with regard to the energy losses of the ions in the polycarbonate films and to the formation of continuous latent tracks through the entire thickness the films. These results have significant implications with respect to the threshold for formation of etchable tracks and to the use of low-energy ions for lithographic applications.

  1. Modulation transfer function and detective quantum efficiency of electron bombarded charge coupled device detector for low energy electrons

    International Nuclear Information System (INIS)

    Horacek, Miroslav

    2005-01-01

    The use of a thinned back-side illuminated charge coupled device chip as two-dimensional sensor working in direct electron bombarded mode at optimum energy of the incident signal electrons is demonstrated and the measurements of the modulation transfer function (MTF) and detective quantum efficiency (DQE) are described. The MTF was measured for energy of electrons 4 keV using an edge projection method and a stripe projection method. The decrease of the MTF for a maximum spatial frequency of 20.8 cycles/mm, corresponding to the pixel size 24x24 μm, is 0.75≅-2.5 dB, and it is approximately the same for both horizontal and vertical directions. DQE was measured using an empty image and the mixing factor method. Empty images were acquired for energies of electrons from 2 to 5 keV and for various doses, ranging from nearly dark image to a nearly saturated one. DQE increases with increasing energy of bombarded electrons and reaches 0.92 for electron energy of 5 keV. For this energy the detector will be used for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope

  2. Methane formation during deuteron bombardment of carbon in the energy range of 100 to 1500 eV

    International Nuclear Information System (INIS)

    Sone, K.

    1982-01-01

    Methane (CD 4 ) formation rates during deuteron bombardment of carbon (Papyex) have been measured in the energy range of 100 to 1500 eV. The temperature dependence of the methane formation rate is well explained by the model proposed by Erents et al. in the temperature range of 600 to 1150 K. The model, however, does not explain the dependence of the methane formation rate on the flux of incident deuterons at a certain temperature near Tsub(m) at which the formation rate has a maximum value. An alternative model is proposed in which the methane formation rate is assumed to be proportional to the product of the following three parameters: the surface concentration of deuterium atoms, the chemical reaction rate for the formation of methane, and the rate of production of vacancies on the surface by the deuteron bombardment. This model predicts an energy dependence of methane formation which has a maximum around 900 eV even at different deuteron fluxes, when the calculated result by Weissman and Sigmund is used for the surface deposited energy responsible for the production of vacancies. (author)

  3. Production of no-carrier-added 139Pr via precursor decay in the proton bombardment of natPr

    International Nuclear Information System (INIS)

    Steyn, G.F.; Vermeulen, C.; Nortier, F.M.; Szelecsenyi, F.; Kovacs, Z.; Qaim, S.M.

    2006-01-01

    Excitation functions and production rates are presented for various Pr and Nd radionuclides formed in the bombardment of Pr with protons, from their respective thresholds up to 100 MeV. The indirect production route 141 Pr(p, 3n) 139m Nd → 139 Pr is investigated as an alternative to the direct production route 140 Ce(p, 2n) 139 Pr for producing no-carrier-added 139 Pr of high radionuclidic purity. The simultaneous production of 139 Pr and 140 Nd using Pr as target is investigated. The advantages and disadvantages of both production routes are discussed. Experimental thick-target production rates are presented for selected Pr radionuclides formed in the bombardment of nat Ce with protons at incident energies of 20, 26 and 32 MeV. All the experimental excitation functions obtained in this work are compared with theoretical predictions by means of the geometry-dependent hybrid (GDH) model as implemented in the code ALICE-IPPE. The results of this work are also compared with previous literature experimental data, if available

  4. Production of C, N, O, and Ne ions by pulsed ion source and acceleration of these ions in the cyclotron

    International Nuclear Information System (INIS)

    Nakajima, Hisao; Kohara, Shigeo; Kageyama, Tadashi; Kohno, Isao

    1977-01-01

    The heavy ion source, of electron bombarded hot cathode type, is usually operated by applying direct current for arc discharge. In order to accelerate Ne 6+ ion in the cyclotron, a pulsed operation of this source was attempted. Ne 6+ and O 6+ ions were accelerated successfully up to 160 MeV and more than 0.1 μA of these ion were extracted from the cyclotron. C 5+ , Ne 7+ and 22 Ne 6+ ions were also extracted with a modest intensity of beam. The intensity of C 4+ , N 4+ , N 5+ , and O 5+ ions was increased about ten times. (auth.)

  5. Ion Implantation of Polymers

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2012-01-01

    The current paper presents a state-of-the-art review in the field of ion implantation of polymers. Numerous published studies of polymers modified by ion beams are analysed. General aspects of ion stopping, latent track formation and changes of structure and composition of organic materials...... are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...... is put on the low-energy implantation of metal ions causing the nucleation and growth of nanoparticles in the shallow polymer layers. Electrical, optical and magnetic properties of metal/polymer composites are under the discussion and the approaches towards practical applications are overviewed....

  6. Contribution to the study of point defects formed in nickel by electron bombardment

    International Nuclear Information System (INIS)

    Oddou, J.L.

    1968-12-01

    After a short account of the experimental techniques employed in our studies, the experimental results obtained on pure nickel samples are exposed. The apparition of the successive annihilation stages of point defects created by electron bombardment is established by isochronal heat treatments: the annihilation kinetics and the corresponding activation energies are determined. The effect of the incident particle doses is also studied. The experimental results are then compared with R.A. Johnson's theoretical calculations of the stability and the migration of point defects in nickel, and taking into account the results obtained by Peretto in magnetic after effect measurements. This leads us to a model in good agreement with calculations and experiment for the first stages. In a second chapter the behaviour of nickel doped by certain impurities is studied. First, the results concerning the rate of increase of resistivity (function of sample purity) is investigated. Two possible explanations of the observed phenomenon are proposed: either a deviation with respect to Mathiessen's law, or an increase of the number of defects formed in the presence of impurity atoms. Finally, a study of the resistivity recovery of the doped samples permits us to suggest an order of magnitude for the binding energy interstitial/impurity atom in the nickel matrix. (author) [fr

  7. Study of the point defects formed in cobalt by electron bombardment

    International Nuclear Information System (INIS)

    Sulpice, G.

    1968-12-01

    A study of the point defects formed in cobalt by electron bombardment is presented. The results are compared with those previously obtained for two other ferromagnetic metals of different structure, iron and nickel. In the first part we give a review of the literature concerning the creation of point defects, their contribution to resistivity and their annihilation mode in the three structure types. We then describe the experimental techniques adapted, in particular the study of the resistivity increase during a linear temperature rise. Our investigations concern the following, essential points : the observation of the successive annihilation stages of the point defects formed in pure cobalt, a study of the variations with respect to the doses and energy of the incident particles, and the determination of the annealing kinetics and the corresponding activation energies. The results are finally compared with the various models of point defect annihilation proposed for other metals: none of these interpretations is in perfect agreement with our results. In the case of cobalt we are thus led to modify the model proposed by our laboratory for iron an nickel. The difference between these three metals is explained by the anisotropic character of the cobalt matrix. (author) [fr

  8. Intravenous coronary angiography utilizing K-emission and bremsstrahlung X-rays produced by electron bombardment

    International Nuclear Information System (INIS)

    1992-01-01

    The screening of the general population for coronary artery disease would be practical if a method existed for visualizing the extent of occlusion after an intravenous injection of contrast agent. Measurements performed with synchrotron radiation at SSRL and NSLS have shown that such an intravenous angiography procedure would be possible with an intense source of monochromatic X-rays. Because of the high cost of an electron synchrotron, theoretical analysis and experiments using inanimate phantoms has been undertaken to demonstrate the feasibility of using the spectrum produced by two appropriately chosen anode materials when bombarded with electrons in the 100--500 keV energy range for angiography. By using the X-rays emitted at 120 degree to the incident electron direction, about 20--30% of the X-ray intensity would be due to K-emission lines. Calculations using the TIGERP Monte Carlo Code, have shown that high quality angiograms of human coronary arteries should be possible with a contrast agent containing ytterbium, if an electron beam pulses of 16 kJ were used for each anode target. The experimental program supported in part by the DOE has consisted of these theoretical calculations and experiments at the Dynamitron Electron Accelerator Facility at BNL

  9. Thermal desorption and bombardment-induced release of deuterium implanted into stainless steels at low energy

    International Nuclear Information System (INIS)

    Farrell, G.; Donnelly, S.E.

    1978-01-01

    Thermal desorption spectra have been obtained for low energy (15-750 eV) deuterons implanted into types 321 and 304 stainless steel, to total fluences in the range 10 13 - 10 17 deuterons/cm 2 . In each case the spectra show a peak at about 350 K, but in the 321 steel there is a second peak in the region of 900 K, the population and peak temperature of which increase with energy. Activation energies of 0.99 and 2.39 eV and a rate constant of 7 x 10 15 /s have been derived for the peaks and it is thought that the first peak corresponds to release from sites close to the surface, while the second peak may be related to trapping at impurities such as Ti. Measurements have also been made of the release of deuterium resulting from post-implantation bombardment with hydrogen ions. It is found that depletion of the first peak in the 321 steel is the result of gas sputtering, but depletion of the second peak is the result of the formation of HD during desorption, while depletion of the peak in the 304 stainless steel also results from HD formation even though this peak is the same as the first peak in the 321 steel. Estimates have also been made of the deuterium self-sputtering cross section at various energies, which show a monotonic decrease as energy increases. (Auth.)

  10. Efficient and rapid C. elegans transgenesis by bombardment and hygromycin B selection.

    Directory of Open Access Journals (Sweden)

    Inja Radman

    Full Text Available We report a simple, cost-effective, scalable and efficient method for creating transgenic Caenorhabditis elegans that requires minimal hands-on time. The method combines biolistic bombardment with selection for transgenics that bear a hygromycin B resistance gene on agar plates supplemented with hygromycin B, taking advantage of our observation that hygromycin B is sufficient to kill wild-type C. elegans at very low concentrations. Crucially, the method provides substantial improvements in the success of bombardments for isolating transmitting strains, the isolation of multiple independent strains, and the isolation of integrated strains: 100% of bombardments in a large data set yielded transgenics; 10 or more independent strains were isolated from 84% of bombardments, and up to 28 independent strains were isolated from a single bombardment; 82% of bombardments yielded stably transmitting integrated lines with most yielding multiple integrated lines. We anticipate that the selection will be widely adopted for C. elegans transgenesis via bombardment, and that hygromycin B resistance will be adopted as a marker in other approaches for manipulating, introducing or deleting DNA in C. elegans.

  11. Producing the radioelectric effect in solid dielectrics by bombardment with accelerated electrons. Obrazovaniye radioelektretnogo effekta v tverdykh dielektrikakh v rezul'tate oblucheniya ikh uskorennymi elektronami

    Energy Technology Data Exchange (ETDEWEB)

    Zavadovskaya, E K; Annenkov, Yu M; Boev, S G; Sigaev, G I

    1976-01-01

    A theoretical and experimental study was made concerning the kinetics of formation of electric moments in solid dielectrics bombarded with fast electrons in the atmosphere. The energy of bombarding electrons in the experiment ranged from 0.6 to 2.0 MeV, at an incident flux density ranging 1.10/sup -9/ to 5.10/sup -7/ A/cm/sup 2/. The specimens were actually grounded during bonbardment, owing to the high electrical conductivity of the ionized ambient gas, and the electric moments were equal to zero. The formation of electric moments occurred after cessation of the bombardment, because the density of the accumulated space charge had become redistributed. An examination was made of the redistribution of space-charge density due to the electrical conductivity of the dielectric, due to intrinsic charge carriers, and due to the release of charges stored in traps. Analytical relations derived for the kinetics of the electric moments give a qualitative description of the experimental results. 5 references.

  12. Measurement of induced radioactivity in a spallation neutron field of a mercury target for GeV-proton bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Kasugai, Y.; Takada, H.; Nakashima, H. [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment] [and others

    2001-03-01

    An integral experiment on radioactivity induced in spallation neutron fields was carried out under the ASTE (AGS-Spallation Target Experiment) collaboration using AGS (Alternative Gradient Synchrotron) at BNL (Brookhaven National Laboratory). The spallation neutrons were produced by bombarding a mercury target with protons of 1.6, 12 and 24 GeV. The number of protons was 3 - 4 x 10{sup 13} for each irradiation. The irradiated materials were titanium, nickel, cobalt, yttrium, and bismuth, and placed on the cylindrical surface of the mercury target at the distance of 15 - 16 cm from the beam-incident-surface of the target. Disintegration rates of induced radioactivities were measured at several cooling-time ranging from hours to months. The principal nuclides contributing to the radioactivity were pointed out for each material. The experimental results for bismuth were compared with the calculations with DCAHIN-SP code. (author)

  13. Measurement of induced radioactivity in a spallation neutron field of a mercury target for GeV-proton bombardment

    International Nuclear Information System (INIS)

    Kasugai, Y.; Takada, H.; Nakashima, H.

    2001-01-01

    An integral experiment on radioactivity induced in spallation neutron fields was carried out under the ASTE (AGS-Spallation Target Experiment) collaboration using AGS (Alternative Gradient Synchrotron) at BNL (Brookhaven National Laboratory). The spallation neutrons were produced by bombarding a mercury target with protons of 1.6, 12 and 24 GeV. The number of protons was 3 - 4 x 10 13 for each irradiation. The irradiated materials were titanium, nickel, cobalt, yttrium, and bismuth, and placed on the cylindrical surface of the mercury target at the distance of 15 - 16 cm from the beam-incident-surface of the target. Disintegration rates of induced radioactivities were measured at several cooling-time ranging from hours to months. The principal nuclides contributing to the radioactivity were pointed out for each material. The experimental results for bismuth were compared with the calculations with DCAHIN-SP code. (author)

  14. A molecular dynamics study of energetic particle bombardment on diamond

    International Nuclear Information System (INIS)

    Li Rongbin; Dai Yongbing; Hu Xiaojun; Shen Hesheng; He Xianchang

    2003-01-01

    Molecular dynamic simulations, utilizing the Tersoff many-body potential, are used to investigate the microscopic processes of a single boron atom with an energy of 500 eV implanted into the diamond (001) 2 x 1 reconstructed surface. By calculating the variation of the mean coordination number with time, the lifetime of a thermal spike created by B bombardment is about 0.18 ps. Formation of the split-interstitial composed of projectile and lattice atom (B-C) is observed. The total potential energy of the system decreases about 0.56 eV with a stable B split-interstitial existing in diamond. Lattice relaxations in the diamond (001) 2 x 1 reconstructed surface or near surface of the simulated have been discussed, and the results show that the outermost layer atoms tend to move inward and other atoms move outward, while the interplanar distance between the outermost layer and the second layer has been shortened by 15%, compared with its starting interplanar distance. Stress distribution in the calculated diamond configuration is inhomogeneous. After boron implanted into diamond with an energy of 500 eV, there is an excess of compressively stressed atoms in the lattice, which induces the total stress being compressive

  15. Sputtering and reflection of self-bombardment of tungsten material

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

    2015-04-15

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

  16. Sputtering and reflection of self-bombardment of tungsten material

    International Nuclear Information System (INIS)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

    2015-01-01

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

  17. Evaluation of electon and nuclear bremsstrahlung in heavy ion collisions

    International Nuclear Information System (INIS)

    Gippner, P.

    1975-01-01

    The detection of quasimolecular X-ray continua provides the possibility of investigating the electron shells of quasimolecules transiently formed during adiabatic heavy ion-atomic collision. The contribution of the electron and nuclear bremsstrahlung to quasimolecular X-ray continua observed in bombarding various targets with 65 and 96 MeV Nb ions were estimated

  18. Secondary electron ion source neutron generator

    Science.gov (United States)

    Brainard, John P.; McCollister, Daryl R.

    1998-01-01

    A neutron generator employing an electron emitter, an ion source bombarded by the electrons from the electron emitter, a plasma containment zone, and a target situated between the plasma containment zone and the electron emitter. The target contains occluded deuterium, tritium, or a mixture thereof

  19. Passivation of the surfaces of single crystal gadolinium molybdate (Gd2(MoO4)3) against attack by hydrofluoric acid by inert ion beam irradiation

    International Nuclear Information System (INIS)

    Bhalla, A.; Cross, L.E.; Tongson, L.

    1978-01-01

    The passivation effect from inert ion beam bombardment has been studied on a ferroelectric surface. The mechanism in these materials may have some additional contributions because of the polarization charges of the domains and the dipole effect (ion beam and surface species) on the surfaces. For these studies Gd 2 (MoO 4 ) 3 (GMO) crystals were selected. Two possible mechanisms of passivation of GMO surfaces when bombarded with ion beams are discussed

  20. The influence of projectile ion induced chemistry on surface pattern formation

    Energy Technology Data Exchange (ETDEWEB)

    Karmakar, Prasanta, E-mail: prasantak@vecc.gov.in [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India); Satpati, Biswarup [Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064 (India)

    2016-07-14

    We report the critical role of projectile induced chemical inhomogeneity on surface nanostructure formation. Experimental inconsistency is common for low energy ion beam induced nanostructure formation in the presence of uncontrolled and complex contamination. To explore the precise role of contamination on such structure formation during low energy ion bombardment, a simple and clean experimental study is performed by selecting mono-element semiconductors as the target and chemically inert or reactive ion beams as the projectile as well as the source of controlled contamination. It is shown by Atomic Force Microscopy, Cross-sectional Transmission Electron Microscopy, and Electron Energy Loss Spectroscopy measurements that bombardment of nitrogen-like reactive ions on Silicon and Germanium surfaces forms a chemical compound at impact zones. Continuous bombardment of the same ions generates surface instability due to unequal sputtering and non-uniform re-arrangement of the elemental atom and compound. This instability leads to ripple formation during ion bombardment. For Argon-like chemically inert ion bombardment, the chemical inhomogeneity induced boost is absent; as a result, no ripples are observed in the same ion energy and fluence.