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Sample records for inassb quantum-dot lasers

  1. Quantum dots: lasers and amplifiers

    CERN Document Server

    Bimberg, D

    2003-01-01

    Continuous wave room-temperature output power of approx 3 W for edge emitters and of 1.2 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 mu m. Characteristic temperatures up to 170 K below 330 K are realized. Simultaneously, differential efficiency exceeds 80% for these devices. Lasers emitting up to 12 W at 1140-1160 nm are useful as pump sources for Tm sup 3 sup + -doped fibres for frequency up-conversion to 470 nm. Both types of lasers show transparency current densities of 6 A cm sup - sup 2 per dot layer, eta sub i sub n sub t = 98% and alpha sub i around 1.5 cm sup - sup 1. Long operation lifetimes (above 3000 h at 50 deg C heatsink temperature at 1.5 W CW) and improved radiation hardness as compared to quantum well (QW) devices are manifested. Cut-off frequencies of about 10 GHz at 1100 nm and 6 GHz at 1300 nm and low alpha factors resulting in reduced filamentation and improved M sup 2 values in single-mode operation are ...

  2. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

    International Nuclear Information System (INIS)

    Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

    2015-01-01

    Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

  3. Multiple Wavelength Quantum Dot Lasers (MW-QDL)

    Data.gov (United States)

    National Aeronautics and Space Administration — An innovative method to achieve optical gain over a wide spectral range using new laser materials is being investigated.  Multiple wavelength quantum dot lasers...

  4. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  5. Numerical simulation of optical feedback on a quantum dot lasers

    International Nuclear Information System (INIS)

    Al-Khursan, Amin H.; Ghalib, Basim Abdullattif; Al-Obaidi, Sabri J.

    2012-01-01

    We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.

  6. Progress and prospect of quantum dot lasers

    Science.gov (United States)

    Arakawa, Yasuhiko

    2001-10-01

    Optical properties and growth of self-assembled quantum dots (SAQDs) for optoelectronic device applications are discussed. After briefly reviewing the history of research on QD lasers, we discuss growth of InAs SQDs including the light emission at the wavelength of 1.52)mum with a narrow linewidth (22 meV) and the area-controlled growth which demonstrates formation of SAQDs in selected local areas on a growth plane using a SiO)-2) mask with MOCVD growth. Then properties of the InGaAs AQDs are investigated by the near- field photoluminescence excitation spectroscopy which reveals gradually increasing continuum absorption connected with the two-dimensional-like (2D-like) wetting layer, resulting in faster relaxation of electrons due to a crossover between OD and 2D character in the density of states. Moreover, we have investigated InGaN self-assembled QDs on a GaN layer achieving the average diameter as small as 8.4nm and a strong light at room temperature. A laser structure with the stacked InGAN QDs embedded in the active layer was fabricated and room temperature operation of blue InGaN QD lasers was achieved under optical excitation. Carrier confinement in QDs was examined using near-field $DAL- photoluminescence measurement: A very sharp spectral line emitted from excitons in individual InGaN QDs was observed. Establishing AlGaN/GaN DBR of high quality, we succeeded in lasing action in InGaN blue light emitting VCSELs. Enhancement of spontaneous emission is demonstrated. Finally, perspective of QD lasers.

  7. Quantum dot lasers: From promise to high-performance devices

    Science.gov (United States)

    Bhattacharya, P.; Mi, Z.; Yang, J.; Basu, D.; Saha, D.

    2009-03-01

    Ever since self-organized In(Ga)As/Ga(AI)As quantum dots were realized by molecular beam epitaxy, it became evident that these coherently strained nanostructures could be used as the active media in devices. While the expected advantages stemming from three-dimensional quantum confinement were clearly outlined, these were not borne out by the early experiments. It took a very detailed understanding of the unique carrier dynamics in the quantum dots to exploit their full potential. As a result, we now have lasers with emission wavelengths ranging from 0.7 to 1.54 μm, on GaAs, which demonstrate ultra-low threshold currents, near-zero chip and α-factor and large modulation bandwidth. State-of-the-art performance characteristics of these lasers are briefly reviewed. The growth, fabrication and characteristics of quantum dot lasers on silicon substrates are also described. With the incorporation of multiple quantum dot layers as a dislocation filter, we demonstrate lasers with Jth=900 A/cm 2. The monolithic integration of the lasers with guided wave modulators on silicon is also described. Finally, the properties of spin-polarized lasers with quantum dot active regions are described. Spin injection of electrons is done with a MnAs/GaAs tunnel barrier. Laser operation at 200 K is demonstrated, with the possibility of room temperature operation in the near future.

  8. Nonlinear laser dynamics from quantum dots to cryptography

    CERN Document Server

    Lüdge, Kathy

    2012-01-01

    A distinctive discussion of the nonlinear dynamical phenomena of semiconductor lasers. The book combines recent results of quantum dot laser modeling with mathematical details and an analytic understanding of nonlinear phenomena in semiconductor lasers and points out possible applications of lasers in cryptography and chaos control. This interdisciplinary approach makes it a unique and powerful source of knowledge for anyone intending to contribute to this field of research.By presenting both experimental and theoretical results, the distinguished authors consider solitary lase

  9. Design strategy for terahertz quantum dot cascade lasers.

    Science.gov (United States)

    Burnett, Benjamin A; Williams, Benjamin S

    2016-10-31

    The development of quantum dot cascade lasers has been proposed as a path to obtain terahertz semiconductor lasers that operate at room temperature. The expected benefit is due to the suppression of nonradiative electron-phonon scattering and reduced dephasing that accompanies discretization of the electronic energy spectrum. We present numerical modeling which predicts that simple scaling of conventional quantum well based designs to the quantum dot regime will likely fail due to electrical instability associated with high-field domain formation. A design strategy adapted for terahertz quantum dot cascade lasers is presented which avoids these problems. Counterintuitively, this involves the resonant depopulation of the laser's upper state with the LO-phonon energy. The strategy is tested theoretically using a density matrix model of transport and gain, which predicts sufficient gain for lasing at stable operating points. Finally, the effect of quantum dot size inhomogeneity on the optical lineshape is explored, suggesting that the design concept is robust to a moderate amount of statistical variation.

  10. Colloidal-Quantum-Dot Ring Lasers with Active Color Control.

    Science.gov (United States)

    le Feber, Boris; Prins, Ferry; De Leo, Eva; Rabouw, Freddy T; Norris, David J

    2018-02-14

    To improve the photophysical performance of colloidal quantum dots for laser applications, sophisticated core/shell geometries have been developed. Typically, a wider bandgap semiconductor is added as a shell to enhance the gain from the quantum-dot core. This shell is designed to electronically isolate the core, funnel excitons to it, and reduce nonradiative Auger recombination. However, the shell could also potentially provide a secondary source of gain, leading to further versatility in these materials. Here we develop high-quality quantum-dot ring lasers that not only exhibit lasing from both the core and the shell but also the ability to switch between them. We fabricate ring resonators (with quality factors up to ∼2500) consisting only of CdSe/CdS/ZnS core/shell/shell quantum dots using a simple template-stripping process. We then examine lasing as a function of the optical excitation power and ring radius. In resonators with quality factors >1000, excitons in the CdSe cores lead to red lasing with thresholds at ∼25 μJ/cm 2 . With increasing power, green lasing from the CdS shell emerges (>100 μJ/cm 2 ) and then the red lasing begins to disappear (>250 μJ/cm 2 ). We present a rate-equation model that can explain this color switching as a competition between exciton localization into the core and stimulated emission from excitons in the shell. Moreover, by lowering the quality factor of the cavity we can engineer the device to exhibit only green lasing. The mechanism demonstrated here provides a potential route toward color-switchable quantum-dot lasers.

  11. Electronic properties of asymmetrical quantum dots dressed by laser field

    Energy Technology Data Exchange (ETDEWEB)

    Kibis, O.V. [Department of Applied and Theoretical Physics, Novosibirsk State Technical University, Karl Marx Avenue 20, 630092 Novosibirsk (Russian Federation); Slepyan, G.Ya.; Maksimenko, S.A. [Institute for Nuclear Problems, Belarus State University, Bobruyskaya St. 11, 220050 Minsk (Belarus); Hoffmann, A. [Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2012-05-15

    In the present paper, we demonstrate theoretically that the strong non-resonant interaction between asymmetrical quantum dots (QDs) and a laser field results in harmonic oscillations of their band gap. It is shown that such oscillations change the spectrum of elementary electron excitations in QDs: in the absence of the laser pumping there is only one resonant electron frequency, but QDs dressed by the laser field have a set of electron resonant frequencies. One expects that this modification of elementary electron excitations in QDs can be observable in optical experiments. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.

    Science.gov (United States)

    Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan

    2018-02-21

    The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm 2 was demonstrated.

  13. Device Characterization of High Performance Quantum Dot Comb Laser

    KAUST Repository

    Rafi, Kazi

    2012-02-01

    The cost effective comb based laser sources are considered to be one of the prominent emitters used in optical communication (OC) and photonic integrated circuits (PIC). With the rising demand for delivering triple-play services (voice, data and video) in FTTH and FTTP-based WDM-PON networks, metropolitan area network (MAN), and short-reach rack-to-rack optical computer communications, a versatile and cost effective WDM transmitter design is required, where several DFB lasers can be replaced by a cost effective broadband comb laser to support on-chip optical signaling. Therefore, high performance quantum dot (Q.Dot) comb lasers need to satisfy several challenges before real system implementations. These challenges include a high uniform broadband gain spectrum from the active layer, small relative intensity noise with lower bit error rate (BER) and better temperature stability. Thus, such short wavelength comb lasers offering higher bandwidth can be a feasible solution to address these challenges. However, they still require thorough characterization before implementation. In this project, we briefly characterized the novel quantum dot comb laser using duty cycle based electrical injection and temperature variations where we have observed the presence of reduced thermal conductivity in the active layer. This phenomenon is responsible for the degradation of device performance. Hence, different performance trends, such as broadband emission and spectrum stability were studied with pulse and continuous electrical pumping. The tested comb laser is found to be an attractive solution for several applications but requires further experiments in order to be considered for photonic intergraded circuits and to support next generation computer-communications.

  14. Optofluidic FRET lasers using aqueous quantum dots as donors.

    Science.gov (United States)

    Chen, Qiushu; Kiraz, Alper; Fan, Xudong

    2016-01-21

    An optofluidic FRET (fluorescence resonance energy transfer) laser is formed by putting FRET pairs inside a microcavity acting as a gain medium. This integration of an optofluidic laser and the FRET mechanism provides novel research frontiers, including sensitive biochemical analysis and novel photonic devices, such as on-chip coherent light sources and bio-tunable lasers. Here, we investigated an optofluidic FRET laser using quantum dots (QDs) as FRET donors. We achieved lasing from Cy5 as the acceptor in a QD-Cy5 pair upon excitation at 450 nm, where Cy5 has negligible absorption by itself. The threshold was approximately 14 μJ mm(-2). The demonstrated capability of QDs as donors in the FRET laser greatly improves the versatility of optofluidic laser operation due to the broad and large absorption cross section of the QDs in the blue and UV spectral regions. The excitation efficiency of the acceptor molecules through a FRET channel was also analyzed, showing that the energy transfer rate and the non-radiative Auger recombination rate of QDs play a significant role in FRET laser performance.

  15. Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Zakharov ND

    2007-01-01

    Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

  16. Pulsed-laser micropatterned quantum-dot array for white light source

    Science.gov (United States)

    Wang, Sheng-Wen; Lin, Huang-Yu; Lin, Chien-Chung; Kao, Tsung Sheng; Chen, Kuo-Ju; Han, Hau-Vei; Li, Jie-Ru; Lee, Po-Tsung; Chen, Huang-Ming; Hong, Ming-Hui; Kuo, Hao-Chung

    2016-03-01

    In this study, a novel photoluminescent quantum dots device with laser-processed microscale patterns has been demonstrated to be used as a white light emitting source. The pulsed laser ablation technique was employed to directly fabricate microscale square holes with nano-ripple structures onto the sapphire substrate of a flip-chip blue light-emitting diode, confining sprayed quantum dots into well-defined areas and eliminating the coffee ring effect. The electroluminescence characterizations showed that the white light emission from the developed photoluminescent quantum-dot light-emitting diode exhibits stable emission at different driving currents. With a flexibility of controlling the quantum dots proportions in the patterned square holes, our developed white-light emitting source not only can be employed in the display applications with color triangle enlarged by 47% compared with the NTSC standard, but also provide the great potential in future lighting industry with the correlated color temperature continuously changed in a wide range.

  17. Mid-Infrared Quantum-Dot Quantum Cascade Laser: A Theoretical Feasibility Study

    Directory of Open Access Journals (Sweden)

    Stephan Michael

    2016-05-01

    Full Text Available In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. Here, we study the influence of two important quantum-dot material parameters, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density can compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. However, by minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.

  18. Phosphorene quantum dot saturable absorbers for ultrafast fiber lasers

    Science.gov (United States)

    Du, J.; Zhang, M.; Guo, Z.; Chen, J.; Zhu, X.; Hu, G.; Peng, P.; Zheng, Z.; Zhang, H.

    2017-01-01

    We fabricate ultrasmall phosphorene quantum dots (PQDs) with an average size of 2.6 ± 0.9 nm using a liquid exfoliation method involving ultrasound probe sonication followed by bath sonication. By coupling the as-prepared PQDs with microfiber evanescent light field, the PQD-based saturable absorber (SA) device exhibits ultrafast nonlinear saturable absorption property, with an optical modulation depth of 8.1% at the telecommunication band. With the integration of the all-fiber PQD-based SA, a continuous-wave passively mode-locked erbium-doped (Er-doped) laser cavity delivers stable, self-starting pulses with a pulse duration of 0.88 ps and at the cavity repetition rate of 5.47 MHz. Our results contribute to the growing body of work studying the nonlinear optical properties of ultrasmall PQDs that present new opportunities of this two-dimensional (2D) nanomaterial for future ultrafast photonic technologies. PMID:28211471

  19. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Chao, E-mail: chaoyangscu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Feng, Guoying, E-mail: guoing_feng@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Dai, Shenyu, E-mail: 232127079@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Wang, Shutong, E-mail: wangshutong.scu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Li, Guang, E-mail: 632524844@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhang, Hua [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhou, Shouhuan, E-mail: zhoush@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); North China Research Institute of Electro-Optics, 4 Jiuxianqiao Street, Chaoyang District, Beijing 100015 (China)

    2017-08-31

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  20. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    International Nuclear Information System (INIS)

    Yang, Chao; Feng, Guoying; Dai, Shenyu; Wang, Shutong; Li, Guang; Zhang, Hua; Zhou, Shouhuan

    2017-01-01

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  1. Analytic Characterization of the Dynamic Regimes of Quantum-Dot Lasers

    Directory of Open Access Journals (Sweden)

    Benjamin Lingnau

    2015-04-01

    Full Text Available We present analytic treatment of the three different dynamic regimes found in quantum-dot laser turn-on and modulation dynamics. A dynamic coupling, and thus density-dependent scattering lifetimes between dots and reservoir, are identified to be crucial for a realistic modeling. We derive a minimal model for the quantum-dot laser dynamics that can be seeded with experimentally accessible parameters, and give explicit analytic equations that are able to predict relaxation-oscillation frequency and damping rate.

  2. Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

    DEFF Research Database (Denmark)

    Thompson, M. G.; Larsson, David; Rae, A. R.

    2006-01-01

    For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs....

  3. Formation of carbon quantum dots and nanodiamonds in laser ablation of a carbon film

    Science.gov (United States)

    Sidorov, A. I.; Lebedev, V. F.; Kobranova, A. A.; Nashchekin, A. V.

    2018-01-01

    We have experimentally shown that nanosecond near-IR pulsed laser ablation of a thin amorphous carbon film produces carbon quantum dots with a graphite structure and nanodiamonds with a characteristic size of 20 - 500 nm on the substrate surface. The formation of these nanostructures is confirmed by electron microscopic images, luminescence spectra and Raman spectra. The mechanisms explaining the observed effects are proposed.

  4. Physics and engineering of compact quantum dot-based lasers for biophotonics

    CERN Document Server

    Rafailov, Edik U

    2013-01-01

    Written by a team of European experts in the field, this book addresses the physics, the principles, the engineering methods, and the latest developments of efficient and compact ultrafast lasers based on novel quantum-dot structures and devices, as well as their applications in biophotonics. Recommended reading for physicists, engineers, students and lecturers in the fields of photonics, optics, laser physics, optoelectronics, and biophotonics.

  5. Optical gain and laser properties of semiconductor quantum-dot systems

    Energy Technology Data Exchange (ETDEWEB)

    Lorke, Michael

    2008-12-17

    For practical applications of quantum dots in light emitters as well as for fundamental studies of their emission properties, the understanding of many-body processes plays a central role. We employ a microscopic theory to study the optical properties of semiconductor quantum dots. The excitation-induced polarization dephasing due to carrier-phonon and carrier-carrier Coulomb interaction as well as the corresponding lineshifts of the optical interband transitions are determined on the basis of a quantum-kinetic treatment of correlation processes. Our theoretical model includes non-Markovian effects as well as renormalized single-particle states. Thus we achieve an accurate description of the partial compensation between different dephasing contributions and are able to systematically study their temperature and density dependencies. Applications of this theoretical model include optical gain spectra for quantum-dot systems that reveal a novel effect, not present in other gain materials. For large carrier densities, the maximum gain can decrease with increasing carrier density. This behavior arises from a delicate balancing of state filling and dephasing, and implies the necessity of an accurate treatment of the carrier-density dependence of correlations. Measurements of the coherence properties of the light emitted from semiconductor quantum-dot lasers have raised considerable attention in recent years. We study the correlations between individual emission events on the basis of a microscopic semiconductor laser theory. This allows for a study of effects like Pauli blocking, modifications to the source term of spontaneous emission, and the absence of complete inversion, that strongly influence the emission characteristics of quantum dot based devices. A new and challenging material system for applications in the visible spectral range are nitride semiconductors. As crystal symmetry and bandmixing effects strongly influence the optical selection rules, the single

  6. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Carsten

    2008-07-01

    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  7. Tunable single and dual mode operation of an external cavity quantum-dot injection laser

    Energy Technology Data Exchange (ETDEWEB)

    Biebersdorf, A [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); Lingk, C [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); De Giorgi, M [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); Feldmann, J [Photonics and Optoelectronics Group, Physics Department and CeNS, Ludwig-Maximilians-Universitaet, Amalienstrasse 54, D-80799 Munich (Germany); Sacher, J [Sacher Lasertechnik GmbH, Hannah Arendt Strasse 3-7, D-35037 Marburg (Germany); Arzberger, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Ulbrich, C [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Boehm, G [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Amann, M-C [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Abstreiter, G [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)

    2003-08-21

    We investigate quantum-dot (QD) lasers in an external cavity using Littrow and Littman configurations. Here, we report on a continuously tunable QD laser with a broad tuning range from 1047 to 1130 nm with high stability and efficient side mode suppression. The full-width at half-maximum of the laser line is 0.85 nm determined mainly by the quality of the external grating. This laser can be operated in a dual-mode modus, where the mode-spacing can be tuned continuously between 1.1 and 34 nm. Simultaneous emission of the two laser modes is shown by sum frequency generation experiments.

  8. Quantum dots

    International Nuclear Information System (INIS)

    Kouwenhoven, L.; Marcus, C.

    1998-01-01

    Quantum dots are man-made ''droplets'' of charge that can contain anything from a single electron to a collection of several thousand. Their typical dimensions range from nanometres to a few microns, and their size, shape and interactions can be precisely controlled through the use of advanced nanofabrication technology. The physics of quantum dots shows many parallels with the behaviour of naturally occurring quantum systems in atomic and nuclear physics. Indeed, quantum dots exemplify an important trend in condensed-matter physics in which researchers study man-made objects rather than real atoms or nuclei. As in an atom, the energy levels in a quantum dot become quantized due to the confinement of electrons. With quantum dots, however, an experimentalist can scan through the entire periodic table by simply changing a voltage. In this article the authors describe how quantum dots make it possible to explore new physics in regimes that cannot otherwise be accessed in the laboratory. (UK)

  9. Spectral dependence of the linewidth enhancement factor in quantum dot lasers

    Energy Technology Data Exchange (ETDEWEB)

    Zubov, F. I., E-mail: fedyazu@mail.ru [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Shernyakov, Yu. M.; Maximov, M. V. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Zhukov, A. E. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Livshits, D. A. [Innolume GmbH (Germany); Payusov, A. S.; Nadtochiy, A. M. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Savelyev, A. V.; Kryzhanovskaya, N. V. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Gordeev, N. Yu. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-12-15

    The spectral analysis of amplified spontaneous emission is used to determine the linewidth enhancement factor (α-factor) in lasers based on InAs/InGaAs quantum dots (QDs) in a wide spectral range near the ground-state optical transition energy. The effect of the pump current and number of QDs on the spectral dependences of the α-factor is examined. The temperature dependence of the spectra of the α-factor is experimentally determined for the first time for lasers with InAs/InGaAs QDs. An explanation is suggested for the observed anomalous decrease in the α-factor with increasing temperature.

  10. Quantum dot SOA/silicon external cavity multi-wavelength laser.

    Science.gov (United States)

    Zhang, Yi; Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr-Jones, Thomas; Hochberg, Michael

    2015-02-23

    We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission.

  11. Stability of the mode-locking regime in tapered quantum-dot lasers

    Science.gov (United States)

    Bardella, P.; Drzewietzki, L.; Rossetti, M.; Weber, C.; Breuer, S.

    2018-02-01

    We study numerically and experimentally the role of the injection current and reverse bias voltage on the pulse stability of tapered, passively mode-locked, Quantum Dot (QD) lasers. By using a multi-section delayed differential equation and introducing in the model the QD inhomogenous broadening, we are able to predict the onset of leading and trailing edge instabilities in the emitted pulse trains and to identify specific trends of stability in dependence on the laser biasing conditions. The numerical results are confirmed experimentally trough amplitude and timing stability analysis of the pulses.

  12. Self-consistent Maxwell-Bloch model of quantum-dot photonic-crystal-cavity lasers

    DEFF Research Database (Denmark)

    Cartar, William; Mørk, Jesper; Hughes, Stephen

    2017-01-01

    We present a powerful computational approach to simulate the threshold behavior of photonic-crystal quantum-dot (QD) lasers. Using a finite-difference time-domain (FDTD) technique, Maxwell-Bloch equations representing a system of thousands of statistically independent and randomly positioned two...... on both the passive cavity and active lasers, where the latter show a general increase in the pump threshold for cavity lengths greater than N = 7, and a reduction in the nominal cavity mode volume for increasing amounts of disorder....

  13. Electrically injected InAs/GaAs quantum dot spin laser operating at 200 K

    Science.gov (United States)

    Basu, D.; Saha, D.; Wu, C. C.; Holub, M.; Mi, Z.; Bhattacharya, P.

    2008-03-01

    A spin-polarized vertical cavity surface emitting laser, with InAs /GaAs self-organized quantum dots as the active gain media, has been fabricated and characterized. Electron spin injection is achieved via a MnAs /GaAs Schottky tunnel contact. The laser is operated at 200K and, at this temperature, the degree of circular polarization in the output is 8% and the maximum threshold current reduction is 14%. These effects are not observed in identical control devices with nonmagnetic contacts.

  14. The spectral analysis and threshold limits of quasi-supercontinuum self-assembled quantum dot interband lasers

    KAUST Repository

    Tan, Cheeloon

    2009-09-01

    This paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening. The experimental and theoretical agreement of a room temperature (293 K) broadband laser emission confirms the presence of multiple-state lasing actions in highly inhomogeneous dot ensembles. The corresponding full-width half-maximum of the photoluminescence is 76 meV as opposed to those wideband lasing coverage at only low temperature (∼60 K) from typical quantum dot lasers. A newly proposed change of homogeneous broadening with injection that occurs only in highly inhomogeneous quantum dot system is critical to account for the continuous wideband lasing but not the conventional ideas of carrier dynamics in semiconductor lasers. In addition, the analysis of threshold conditions reveals that broadband lasing only occurs when the energy spacing between quantized energy states is comparable to the inhomogeneous broadening of quantum-dot nanostructures. The study is important in providing a picture of this novel device and realization of broad lasing coverage for diverse applications, especially in the research field of short-pulse generation and ultra-fast phenomena in semiconductor quantum-dot laser. © 2009 IEEE.

  15. Quantum Dots

    Science.gov (United States)

    Tartakovskii, Alexander

    2012-07-01

    Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by

  16. Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage

    International Nuclear Information System (INIS)

    Shun-Cai, Zhao; Zheng-Dong, Liu

    2009-01-01

    We present a density matrix approach for the theoretical description of an asymmetric double quantum dot (QD) system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)

  17. Laser and Optical Properties of Green-Emitting ZnCdSe Quantum Dot Based Heterostructures

    Science.gov (United States)

    Vainilovich, Aliaksei G.; Lutsenko, E. V.; Yablonskii, G. P.; Sedova, I. V.; Sorokin, S. V.; Gronin, S. V.; Ivanov, S. V.; Kop'ev, P. S.

    Green-emitting laser diodes are in great demand for mobile projection media (pico-projector), navigation, underwater communication but they are still absent on the market. InGaN/GaN-based quantum well structures are approaching green spectral region by use of polar, semipolar as well as free-standing GaN substrates. However such heterostructures suffer from high laser thresholds with increase of indium content. A promising alternative way is the use of highly efficient green-emitting undoped ZnCdSe based quantum dot (QD) laser heterostructures optically pumped by blue InGaN laser diodes. Operation of blue-green laser converter based on MBE grown heterostructure with two ZnCdSe QD layers was shown for the first time in [1].

  18. Quantum-dot lasers with asymmetric barrier layers: a path to ideal performance (Conference Presentation)

    Science.gov (United States)

    Yakusheva, Anastasia A.; Asryan, Levon V.

    2017-02-01

    To overcome the limitations placed on the operating characteristics of diode lasers by recombination outside their active region, two novel designs were proposed for them: one using double tunneling-injection (injection of both electrons and holes) into the active region, and the other using two asymmetric barrier layers (ABLs) flanking the active region. The barrier layers are asymmetric in that they have considerably different heights for the carriers of opposite signs. The ABL located on the electron- (hole-) injecting side of the structure provides a low barrier (ideally no barrier) for electrons (holes) [so that it does not prevent electrons (holes) from easily approaching the active region] and a high barrier for holes (electrons) [so that holes (electrons) injected from the opposite side of the structure do not overcome it]. The use of ABLs should thus ideally prevent the simultaneous existence of electrons and holes (and hence parasitic electron-hole recombination) outside the active region. In this work, we calculate the threshold and power characteristics of quantum dot lasers with ABLs. We show that quantum dot lasers with ABLs offer close-to-ideal performance: low threshold current density, very high characteristic temperature (virtually temperature-independent operation), close-to-unity internal differential quantum efficiency, and linear light-current characteristic.

  19. Efficient optical trapping of CdTe quantum dots by femtosecond laser pulses

    KAUST Repository

    Chiang, Weiyi

    2014-12-11

    The development in optical trapping and manipulation has been showing rapid progress, most of it is in the small particle sizes in nanometer scales, substituting the conventional continuous-wave lasers with high-repetition-rate ultrashort laser pulse train and nonlinear optical effects. Here, we evaluate two-photon absorption in optical trapping of 2.7 nm-sized CdTe quantum dots (QDs) with high-repetition-rate femtosecond pulse train by probing laser intensity dependence of both Rayleigh scattering image and the two-photon-induced luminescence spectrum of the optically trapped QDs. The Rayleigh scattering imaging indicates that the two-photon absorption (TPA) process enhances trapping ability of the QDs. Similarly, a nonlinear increase of the two-photon-induced luminescence with the incident laser intensity fairly indicates the existence of the TPA process.

  20. A InGaN/GaN quantum dot green (λ=524 nm) laser

    KAUST Repository

    Zhang, Meng

    2011-01-01

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/ cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼1.1%, respectively, at 1.3 kA/ cm 2. The value of T0 =233 K in the temperature range of 260-300 K. © 2011 American Institute of Physics.

  1. Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity

    DEFF Research Database (Denmark)

    Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.

    2010-01-01

    We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (¿ -24dB) cavity reduces the current-induced shift d¿/dI of the principal...

  2. High temperature laser diode based on a single sheet of quantum dots

    Science.gov (United States)

    Ledentsov, N. N.; Shchukin, V. A.; Maximov, M. V.; Shernyakov, Yu M.; Payusov, A. S.; Gordeev, N. Yu; Rouvimov, S. S.

    2015-10-01

    A single sheet of high-density InGaAs quantum dots (QDs) is used as a gain medium of InGaAs-GaAs-AlGaAs lasers. The devices operate at high power in the continuous mode beyond 160 °C with an emission wavelength up to ˜1.27 μm. At short cavity lengths a strong broadening (>300 nm) of the electroluminescence spectrum is observed at high current densities, permitting light sources for broadly wavelength tuneable and multi-wavelength infrared lasers based on a single gain chip, and related frequency conversion devices for the whole visible spectrum range. High power cw operation (>2 W) limited by catastrophic optical mirror damage is realized.

  3. Dropout dynamics in pulsed quantum dot lasers due to mode jumping

    Energy Technology Data Exchange (ETDEWEB)

    Sokolovskii, G. S.; Dudelev, V. V.; Deryagin, A. G.; Novikov, I. I.; Maximov, M. V.; Ustinov, V. M.; Kuchinskii, V. I. [Ioffe Physical-Technical Institute, St. Petersburg (Russian Federation); Viktorov, E. A. [National Research University of Information Technologies, Mechanics and Optics, Saint Petersburg (Russian Federation); Optique Nonlinéaire Théorique, Campus Plaine CP 231, 1050 Bruxelles (Belgium); Applied Physics Research Group (APHY), Vrije Universiteit Brussel, Pleinlaan 2, B-1050 Brussels (Belgium); Abusaa, M. [Applied Physics Research Group (APHY), Vrije Universiteit Brussel, Pleinlaan 2, B-1050 Brussels (Belgium); Arab American University, Jenin, Palestine (Country Unknown); Danckaert, J. [Applied Physics Research Group (APHY), Vrije Universiteit Brussel, Pleinlaan 2, B-1050 Brussels (Belgium); Kolykhalova, E. D. [St. Petersburg State Electrotechnical University “LETI,” St. Petersburg (Russian Federation); Soboleva, K. K. [St. Petersburg State Polytechnical University, St. Petersburg (Russian Federation); Zhukov, A. E. [Academic University, St. Petersburg (Russian Federation); Sibbett, W. [University of St. Andrews, St. Andrews (United Kingdom); Rafailov, E. U. [Aston Institute of Photonic Technologies, Aston University, Birmingham (United Kingdom); Erneux, T. [Optique Nonlinéaire Théorique, Campus Plaine CP 231, 1050 Bruxelles (Belgium)

    2015-06-29

    We examine the response of a pulse pumped quantum dot laser both experimentally and numerically. As the maximum of the pump pulse comes closer to the excited-state threshold, the output pulse shape becomes unstable and leads to dropouts. We conjecture that these instabilities result from an increase of the linewidth enhancement factor α as the pump parameter comes close to the excitated state threshold. In order to analyze the dynamical mechanism of the dropout, we consider two cases for which the laser exhibits either a jump to a different single mode or a jump to fast intensity oscillations. The origin of these two instabilities is clarified by a combined analytical and numerical bifurcation diagram of the steady state intensity modes.

  4. Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

    Science.gov (United States)

    Lien, Yu-Chung; Shieh, Jia-Min; Huang, Wen-Hsien; Tu, Cheng-Hui; Wang, Chieh; Shen, Chang-Hong; Dai, Bau-Tong; Pan, Ci-Ling; Hu, Chenming; Yang, Fu-Liang

    2012-04-01

    The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 μs under low operating voltages of ± 7 V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM.

  5. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Zubov, F. I.; Kryzhanovskaya, N. V.; Moiseev, E. I.; Polubavkina, Yu. S.; Simchuk, O. I. [Russian Academy of Sciences, Saint Petersburg National Research Academic University (Russian Federation); Kulagina, M. M.; Zadiranov, Yu. M.; Troshkov, S. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lipovskii, A. A.; Maximov, M. V.; Zhukov, A. E., E-mail: zhukale@gmail.com [Russian Academy of Sciences, Saint Petersburg National Research Academic University (Russian Federation)

    2016-10-15

    The spectral, threshold, and power characteristics of a microdisk laser 31 μm in diameter with an active region based on InAs/InGaAs quantum dots, operating in the continuous-wave (cw) mode at room temperature are studied. The minimum threshold current density is 0.58 kA/cm{sup 2}, the subthreshold linewidth of the whispering-gallery mode is 50 pm at a wavelength lying in the range of 1.26–1.27 μm. The total power emitted into free space reaches ~0.1 mW in the cw mode, whereas the radiation power of the whispering-gallery modes is ~2.8%.

  6. Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

    Directory of Open Access Journals (Sweden)

    Hamza Qayyum

    2016-05-01

    Full Text Available The capability to fabricate Ge/Si quantum dots with small dot size and high dot density uniformly over a large area is crucial for many applications. In this work, we demonstrate that this can be achieved by scanning a pre-deposited Ge thin layer on Si substrate with a line-focused pulsed laser beam to induce formation of quantum dots. With suitable setting, Ge/Si quantum dots with a mean height of 2.9 nm, a mean diameter of 25 nm, and a dot density of 6×1010 cm−2 could be formed over an area larger than 4 mm2. The average size of the laser-induced quantum dots is smaller while their density is higher than that of quantum dots grown by using Stranski-Krastanov growth mode. Based on the dependence of the characteristics of quantum dots on the laser parameters, a model consisting of laser-induced strain, surface diffusion, and Ostwald ripening is proposed for the mechanism underlying the formation of the Ge/Si quantum dots. The technique demonstrated could be applicable to other materials besides Ge/Si.

  7. Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

    Energy Technology Data Exchange (ETDEWEB)

    Qayyum, Hamza; Chen, Szu-yuan, E-mail: sychen@ltl.iams.sinica.edu.tw [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Central University, Zhongli, Taoyuan 320, Taiwan (China); Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 115, Taiwan (China); Lu, Chieh-Hsun [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Central University, Zhongli, Taoyuan 320, Taiwan (China); Chuang, Ying-Hung [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan (China); Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan (China); Lin, Jiunn-Yuan [Department of Physics, National Chung Cheng University, Chiayi 621, Taiwan (China)

    2016-05-15

    The capability to fabricate Ge/Si quantum dots with small dot size and high dot density uniformly over a large area is crucial for many applications. In this work, we demonstrate that this can be achieved by scanning a pre-deposited Ge thin layer on Si substrate with a line-focused pulsed laser beam to induce formation of quantum dots. With suitable setting, Ge/Si quantum dots with a mean height of 2.9 nm, a mean diameter of 25 nm, and a dot density of 6×10{sup 10} cm{sup −2} could be formed over an area larger than 4 mm{sup 2}. The average size of the laser-induced quantum dots is smaller while their density is higher than that of quantum dots grown by using Stranski-Krastanov growth mode. Based on the dependence of the characteristics of quantum dots on the laser parameters, a model consisting of laser-induced strain, surface diffusion, and Ostwald ripening is proposed for the mechanism underlying the formation of the Ge/Si quantum dots. The technique demonstrated could be applicable to other materials besides Ge/Si.

  8. Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser

    Science.gov (United States)

    Ellis, Bryan; Mayer, Marie A.; Shambat, Gary; Sarmiento, Tomas; Harris, James; Haller, Eugene E.; Vučković, Jelena

    2011-05-01

    Efficient, low-threshold and compact semiconductor laser sources are under investigation for many applications in high-speed communications, information processing and optical interconnects. The best edge-emitting and vertical-cavity surface-emitting lasers have thresholds on the order of 100 µA (refs 1,2), but dissipate too much power to be practical for many applications, particularly optical interconnects. Optically pumped photonic-crystal nanocavity lasers represent the state of the art in low-threshold lasers; however, to be practical, techniques to electrically pump these structures must be developed. Here, we demonstrate a quantum-dot photonic-crystal nanocavity laser in gallium arsenide pumped by a lateral p-i-n junction formed by ion implantation. Continuous-wave lasing is observed at temperatures up to 150 K. Thresholds of only 181 nA at 50 K and 287 nA at 150 K are observed--the lowest thresholds ever observed in any type of electrically pumped laser.

  9. Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, A. E., E-mail: zhukov@beam.ioffe.ru; Arakcheeva, E. M. [Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation); Gordeev, N. Yu. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Zubov, F. I.; Kryzhanovskaya, N. V. [Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation); Maximov, M. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Savelyev, A. V. [Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation)

    2011-07-15

    Peak modulation frequency of lasers based on self-organized quantum dots is calculated taking into account the effect of nonlinear gain saturation. Because of a large nonlinear gain coefficient and a reduction in the differential gain with increasing optical losses, the peak modulation frequency is attained for an optimum loss level that is significantly lower than the saturated optical gain in the active region. For lasers based on multiply stacked arrays of quantum dots, the peak modulation frequency first increases with increasing number of quantum-dot layers before leveling off, with the limiting value being inversely proportional to the nonlinear gain coefficient.

  10. Photoionization cross-section of donor impurity in spherical quantum dots under electric and intense laser fields

    International Nuclear Information System (INIS)

    Burileanu, L.M.

    2014-01-01

    Using a perturbative method we have investigated the behavior of the binding energy and photoionization cross-section of a donor impurity in spherical GaAs–GaAlAs quantum dots under the influence of electric and intense high-frequency laser fields. The dependencies of the binding energy and photoionization cross-section on electric and laser field strength, dot radius and impurity position were investigated. Our results show that the amplitude of photoionization cross-section grows with the dot radius increase and the peak of the cross-section blue shifts with the laser intensity increment. We have found that the binding energy is not a monotonically function of laser intensity: it decreases or increases depending on electric field regime. The studied effects are even more pronounced as the quantum dot radius is smaller. -- Highlights: • A photoionization cross-section study in quantum dots under laser and electric fields. • The photoionization cross-section peaks are red shifted by the electric field. • The photoionization cross-section peaks are blue shifted by the laser field. • The combined effects of applied fields strongly affect the binding energy

  11. Robust Whispering-Gallery-Mode Microbubble Lasers from Colloidal Quantum Dots.

    Science.gov (United States)

    Wang, Yue; Ta, Van Duong; Leck, Kheng Swee; Tan, Beng Hau Ian; Wang, Zeng; He, Tingchao; Ohl, Claus-Dieter; Demir, Hilmi Volkan; Sun, Handong

    2017-04-12

    Microlasers hold great promise for the development of photonics and optoelectronics. Among the discovered optical gain materials, colloidal quantum dots (CQDs) have been recognized as the most appealing candidate due to the facile emission tunability and solution processability. However, to date, it is still challenging to develop CQD-based microlasers with low cost yet high performance. Moreover, the poor long-term stability of CQDs remains to be the most critical issue, which may block their laser aspirations. Herein, we developed a unique but generic approach to forming a novel type of a whispering-gallery-mode (WGM) microbubble laser from the hybrid CQD/poly(methyl methacrylate) (PMMA) nanocomposites. The formation mechanism of the microbubbles was unraveled by recording the drying process of the nanocomposite droplets. Interestingly, these microbubbles naturally serve as the high-quality WGM laser resonators. By simply changing the CQDs, the lasing emission can be tuned across the whole visible spectral range. Importantly, these microbubble lasers exhibit unprecedented long-term stability (over one year), sufficient for practical applications. As a proof-of-concept, the potential of water vapor sensing was demonstrated. Our results represent a significant advance in microlasers based on the advantageous CQDs and may offer new possibilities for photonics and optoelectronics.

  12. Laser-synthesized oxide-passivated bright Si quantum dots for bioimaging.

    Science.gov (United States)

    Gongalsky, M B; Osminkina, L A; Pereira, A; Manankov, A A; Fedorenko, A A; Vasiliev, A N; Solovyev, V V; Kudryavtsev, A A; Sentis, M; Kabashin, A V; Timoshenko, V Yu

    2016-04-22

    Crystalline silicon (Si) nanoparticles present an extremely promising object for bioimaging based on photoluminescence (PL) in the visible and near-infrared spectral regions, but their efficient PL emission in aqueous suspension is typically observed after wet chemistry procedures leading to residual toxicity issues. Here, we introduce ultrapure laser-synthesized Si-based quantum dots (QDs), which are water-dispersible and exhibit bright exciton PL in the window of relative tissue transparency near 800 nm. Based on the laser ablation of crystalline Si targets in gaseous helium, followed by ultrasound-assisted dispersion of the deposited films in physiological saline, the proposed method avoids any toxic by-products during the synthesis. We demonstrate efficient contrast of the Si QDs in living cells by following the exciton PL. We also show that the prepared QDs do not provoke any cytoxicity effects while penetrating into the cells and efficiently accumulating near the cell membrane and in the cytoplasm. Combined with the possibility of enabling parallel therapeutic channels, ultrapure laser-synthesized Si nanostructures present unique object for cancer theranostic applications.

  13. Probing single-charge fluctuations at a GaAs/AlAs interface using laser spectroscopy on a nearby InGaAs quantum dot.

    Science.gov (United States)

    Houel, J; Kuhlmann, A V; Greuter, L; Xue, F; Poggio, M; Gerardot, B D; Dalgarno, P A; Badolato, A; Petroff, P M; Ludwig, A; Reuter, D; Wieck, A D; Warburton, R J

    2012-03-09

    We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with ±5  nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.

  14. Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

    KAUST Repository

    Alhashim, Hala H.

    2015-08-15

    Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.

  15. Theory of single quantum dot lasers: Pauli-blocking-enhanced anti-bunching

    International Nuclear Information System (INIS)

    Su, Yumian; Bimberg, Dieter; Carmele, Alexander; Richter, Marten; Knorr, Andreas; Lüdge, Kathy; Schöll, Eckehard

    2011-01-01

    We present a theoretical model to describe the dynamics of a single semiconductor quantum dot interacting with a microcavity system. The confined quantum dot levels are pumped electrically via a carrier reservoir. The investigated dynamics includes semiconductor-specific, reservoir-induced Pauli-blocking terms in the equations of the photon probability functions. This enables a direct study of the photon statistics of the quantum light emission in dependence on the different pumping rates

  16. Quantum dots assisted laser desorption/ionization mass spectrometric detection of carbohydrates: qualitative and quantitative analysis.

    Science.gov (United States)

    Bibi, Aisha; Ju, Huangxian

    2016-04-01

    A quantum dots (QDs) assisted laser desorption/ionization mass spectrometric (QDA-LDI-MS) strategy was proposed for qualitative and quantitative analysis of a series of carbohydrates. The adsorption of carbohydrates on the modified surface of different QDs as the matrices depended mainly on the formation of hydrogen bonding, which led to higher MS intensity than those with conventional organic matrix. The effects of QDs concentration and sample preparation method were explored for improving the selective ionization process and the detection sensitivity. The proposed approach offered a new dimension to the application of QDs as matrices for MALDI-MS research of carbohydrates. It could be used for quantitative measurement of glucose concentration in human serum with good performance. The QDs served as a matrix showed the advantages of low background, higher sensitivity, convenient sample preparation and excellent stability under vacuum. The QDs assisted LDI-MS approach has promising application to the analysis of carbohydrates in complex biological samples. Copyright © 2016 John Wiley & Sons, Ltd.

  17. Laser-induced photocurrent measurement in quasi-arrayed ZnS quantum dots

    Science.gov (United States)

    Mohanta, D.; Choudhury, A.

    2005-03-01

    Electron transfer from confined structures like quantum film, quantum wire or quantum dot has been studied in conjunction with photoexcitation. The present paper highlights photocurrent generation in the external circuit due to electron transport within the organized ZnS quantum dots by means of tunnelling through the thin dielectric matrix. The average size distribution of the particles was determined by X-ray diffraction (XRD) in consistency with high-resolution electron microscopy (TEM). We demonstrate measurable and sustainable photocurrent in the external circuit as a result of quantum charge transport within arrayed quantum dots excited by high-power photons. The nonlinearity nature of I- V response is marked by Coulomb blockade signature, which serves as a prerequisite for single electron device applications.

  18. Magnetic field effect on the energy levels of an exciton in a GaAs quantum dot: Application for excitonic lasers.

    Science.gov (United States)

    Jahan, K Luhluh; Boda, A; Shankar, I V; Raju, Ch Narasimha; Chatterjee, Ashok

    2018-03-22

    The problem of an exciton trapped in a Gaussian quantum dot (QD) of GaAs is studied in both two and three dimensions in the presence of an external magnetic field using the Ritz variational method, the 1/N expansion method and the shifted 1/N expansion method. The ground state energy and the binding energy of the exciton are obtained as a function of the quantum dot size, confinement strength and the magnetic field and compared with those available in the literature. While the variational method gives the upper bound to the ground state energy, the 1/N expansion method gives the lower bound. The results obtained from the shifted 1/N expansion method are shown to match very well with those obtained from the exact diagonalization technique. The variation of the exciton size and the oscillator strength of the exciton are also studied as a function of the size of the quantum dot. The excited states of the exciton are computed using the shifted 1/N expansion method and it is suggested that a given number of stable excitonic bound states can be realized in a quantum dot by tuning the quantum dot parameters. This can open up the possibility of having quantum dot lasers using excitonic states.

  19. Photomlxer for terahertz electromagnetic wave emission comprising quantum dots in a laser cavity

    DEFF Research Database (Denmark)

    2013-01-01

    The present invention relates to a photomixer for generating terahertz electromagnetic radiation in response to illumination by a time-modulated optical signal. The photomixer (300) comprises a carrier substrate (310) with a plurality of quantum dots arranged in an emission region (308) thereof...

  20. Quantum-dot nano-cavity lasers with Purcell-enhanced stimulated emission

    DEFF Research Database (Denmark)

    Gregersen, Niels; Skovgård, Troels Suhr; Lorke, Michael

    2012-01-01

    We present a rate equation model for quantum-dot light-emitting devices that take into account Purcell enhancement of both spontaneous emission and stimulated emission as well as the spectral profile of the optical and electronic density-of-states. We find that below threshold the b-factor in a q...

  1. 1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability

    DEFF Research Database (Denmark)

    Zubov, F. I.; Gladii, S. P.; Shernyakov, Yu M.

    2016-01-01

    Temperature characteristics of InAs/InGaAsP quantum dot (QD) lasers synthesized on InP (001) substrate are presented. The lasers demonstrate high temperature stability: a threshold current characteristic temperature as high as 205 K in the temperature range between 20 to 50°C was measured. Lasing...

  2. Laser induced magneto-Raman optical gain of an exciton and a biexciton in a CdTe/ZnTe quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Sujanah, P. [Dept. of Physics, The American College, Madurai 625 002 (India); John Peter, A., E-mail: a.john.peter@gmail.com [Dept. of Physics, Govt. Arts College, Melur 625 106, Madurai (India); Lee, Chang Woo, E-mail: cwlee@khu.ac.kr [Department of Chemical Engineering, College of Engineering, Kyung Hee University, 1732 Deogyeong-daero, Gihung, Yongin, Gyeonggi 446-701 (Korea, Republic of)

    2016-06-15

    Magnetic field and laser field amplitude dependent electronic and optical properties of exciton and biexciton in a CdTe/ZnTe quantum dot nanostructure are brought out taking into account the spatial confinement effect. Binding energies of exciton and biexciton as functions of laser field amplitude and magnetic field strength are computed in a CdTe/ZnTe quantum dot for the constant dot radius 30 Å. Oscillator strength, resonant absorption coefficients and resonant optical Raman intensity of the exciton and biexciton as a function of laser field amplitude are obtained in the presence of magnetic field strength in a CdTe/ZnTe quantum dot. The laser field induced magneto-Raman gain is studied for a constant dot radii. The Coulomb interaction energy which is involved in Hartree potential is obtained numerically. The result shows that the applications of magnetic field strength and the laser field amplitude alter the electronic and optical properties considerably in the CdTe/ZnTe quantum dot.

  3. Q-switched Yb3+:YAG laser using plasmonic Cu2-xSe quantum dots as saturable absorbers

    Science.gov (United States)

    Wang, Yimeng; Zhan, Yi; Lee, Sooho; Wang, Li; Zhang, Xinping

    2018-04-01

    Cu2-xSe quantum dots (QDs) were synthesized by organometallic synthesis methods. Due to heavy self-doping, the Cu2-xSe QDs exhibit particle plasmon resonance in the near-infrared. Transient absorption spectroscopic investigation revealed strong nonlinear optical absorption and bleaching performance of the QDs under femtosecond pulse excitation, which enabled the Cu2-xSe QDs to be excellent saturable absorbers and applied in Q-switched or mode-locked lasers. A passively Q-switched Yb3+:YAG solid-state laser at 1.03 μm was achieved by coating Cu2-xSe QDs as saturable absorbers onto one of the output coupler of the V-shaped linear cavity.

  4. Quantum dot spectroscopy

    DEFF Research Database (Denmark)

    Leosson, Kristjan

    Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra. Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dot states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...

  5. Quantum dot spectroscopy

    DEFF Research Database (Denmark)

    Leosson, Kristjan

    1999-01-01

    Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra.Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dots states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...

  6. Quantum dot devices for optical communications

    DEFF Research Database (Denmark)

    Mørk, Jesper

    2005-01-01

    -low threshold currents and amplifiers with record-high power levels. In this tutorial we will review the basic properties of quantum dots, emphasizing the properties which are important for laser and amplifier applications, as well as devices for all-optical signal processing. The high-speed properties....... The main property of semiconductor quantum dots compared to bulk material or even quantum well structures is the discrete nature of the allowed states, which means that inversion of the medium can be obtained for very low electron densities. This has led to the fabrication of quantum dot lasers with record...

  7. The dynamic characteristics and linewidth enhancement factor of quasi-supercontinuum self-assembled quantum dot lasers

    KAUST Repository

    Tan, Cheeloon

    2009-09-01

    The theoretical analysis of optical gain and chirp characteristics of a semiconductor quantum dot (Qdot) broadband laser is presented. The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi-supercontinuum lasing in InGaAs/GaAs Qdot laser. The model takes into account factors such as Qdot size fluctuation, finite carrier lifetime in each confined energy states, wetting layer induced nonconfined states and the presence of continuum states. Hence, calculation of the linewidth enhancement factor together with the variation of optical gain and index change across the spectrum of interest becomes critical to yield a basic understanding on the limitation of this new class of lasers. Such findings are important for the design of a practical single broadband laser diode for applications in low coherence interferometry sensing and optical fiber communications. Calculation results show that the linewidth enhancement factor from the ground state of broadband Qdot lasers (α ∼ 3) is slightly larger but in the same order of magnitude as compared to that of conventional Qdot lasers. The gain spectrum of the quasi-supercontinuum lasing system exhibits almost twice the bandwidth than conventional lasers but with comparable material differential gain (∼ 10-16 cm2) and material differential refractive index (∼ 10sup>-20 cm3 ) near current threshold. © 2009 IEEE.

  8. Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C.

    Science.gov (United States)

    Jhang, Yuan-Hsuan; Mochida, Reio; Tanabe, Katsuaki; Takemasa, Keizo; Sugawara, Mitsuru; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2016-08-08

    We demonstrate direct modulation of an InAs/GaAs quantum dot (QD) laser on Si. A Fabry-Pérot QD laser was integrated on Si by an ultraviolet-activated direct bonding method, and a cavity was formed using cleaved facets without HR/AR coatings. The bonded laser was operated under continuous-wave pumping at room temperature with a threshold current of 41 mA and a maximum output power of 30 mW (single facet). Even with such a simple device structure and fabrication process, our bonded laser is directly modulated using a 10 Gbps non-return-to-zero signal with an extinction ratio of 1.9 dB at room temperature. Furthermore, 6 Gbps modulation with an extinction ratio of 4.5 dB is achieved at temperatures up to 60 °C without any current or voltage adjustment. These results of device performances indicate an encouraging demonstration on III-V QD lasers on Si for the applications of the photonic integrated circuits.

  9. Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

    Science.gov (United States)

    Crump, Paul; Patterson, Steve; Elim, Sandrio; Zhang, Shiguo; Bougher, Mike; Patterson, Jason; Das, Suhit; Dong, Weimin; Grimshaw, Mike; Wang, Jun; Wise, Damian; DeFranza, Mark; Bell, Jake; Farmer, Jason; DeVito, Mark; Martinsen, Rob; Kovsh, Alexey; Toor, Fatima; Gmachl, Claire F.

    2007-02-01

    Diode lasers supply high power densities at wavelengths from 635-nm to 2000-nm, with different applications enabled by providing this power at different wavelengths. As the range of available wavelengths broadens, many novel medical and atmospheric applications are enabled. Traditional quantum well lasers provide high performance in the range 635- nm to 1100-nm range for GaAs-based devices and 1280-nm to 2000-nm for InP, leaving a notable gap in the 1100 to 1280-nm range. There are many important medical and sensing applications in this range and quantum dots produced using Stranski-Krastanow self-organized MBE growth on GaAs substrates provide an alternative high performance solution. We present results confirming broad area quantum dot lasers can deliver high optical powers of 16-W per emitter and high power conversion efficiency of 35% in this wavelength range. In addition, there are growing applications for high power sources in wavelengths > 1500-nm. We present a brief review of our current performance status in this wavelength range, both with conventional quantum wells in the 1500-nm to 2500-nm range and MOCVD grown quantum cascade lasers for wavelengths > 4000-nm. At each wavelength, we review the designs that deliver this performance, prospects for increased performance and the potential for further broadening the availability of novel wavelengths for high power applications.

  10. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

    Science.gov (United States)

    2015-07-16

    Vertical External Cavity Surface Emitting Lasers). 2)! Installation of a FTIR based temperature dependent reflectivity setup for characterizing VECSELs...and SESAMs (Semiconductor Saturable Absorber Mirrors). 3)! Demonstration of up to 6 Watts CW with InAs QD (Quantum Dot) VECSELs (1250 nm) and 15...AFRL and at other university collaborators such as the University of Arizona. 2.#Installation#of#a# FTIR #based#temperature#dependent#reflectivity

  11. Photovoltaic properties of Si-based quantum-dot-sensitized solar cells prepared using laser plasma in liquid

    Science.gov (United States)

    Kobayashi, Hiroki; Chewchinda, Pattarin; Inoue, Yasunori; Funakubo, Hiroshi; Hara, Michikazu; Fujino, Masaie; Odawara, Osamu; Wada, Hiroyuki

    2014-01-01

    The current-voltage characteristics of Si-based quantum-dot-sensitized solar cells (QDSSCs) were examined. Si nanoparticles were prepared using laser-induced plasma. Si wafer in ethanol was irradiated with a Nd:YAG second harmonic generation (SHG) laser beam. The prepared nanoparticles were identified by X-ray diffraction analysis and Raman spectroscopy. Particle size was measured by transmission electron microscopy (TEM). Highly crystalline Si nanoparticles were observed by TEM. Photoluminescence (PL) spectra of the Si nanoparticles were also measured. Two types of QDSSCs were produced. One included ethanol during the production of TiO2/Si nanoparticle layer on a transparent conductive oxide electrode because ethanol solution with dispersed Si nanoparticles was prepared by this method; the other type did not include ethanol. The photovoltaic properties of the former were significantly degraded; the latter maintained its good photovoltaic properties. The properties of the latter gradually improved during the measurements. In particular, current density was increased, which increased conversion efficiency. These phenomena are related to changes in Si nanoparticle surface conditions.

  12. Laser-excited optical emission response of CdTe quantum dot/polymer nanocomposite under shock compression

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Pan [LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); Kang, Zhitao; Summers, Christopher J. [Phosphor Technology Center of Excellence, Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); Bansihev, Alexandr A.; Christensen, James M.; Dlott, Dana D. [School of Chemical Sciences and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Breidenich, Jennifer; Scripka, David A.; Thadhani, Naresh N. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Zhou, Min, E-mail: min.zhou@gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States)

    2016-01-04

    Laser-driven shock compression experiments and corresponding finite element method simulations are carried out to investigate the blueshift in the optical emission spectra under continuous laser excitation of a dilute composite consisting of 0.15% CdTe quantum dots by weight embedded in polyvinyl alcohol polymer. This material is a potential candidate for use as internal stress sensors. The analyses focus on the time histories of the wavelength blue-shift for shock loading with pressures up to 7.3 GPa. The combined measurements and calculations allow a relation between the wavelength blueshift and pressure for the loading conditions to be extracted. It is found that the blueshift first increases with pressure to a maximum and subsequently decreases with pressure. This trend is different from the monotonic increase of blueshift with pressure observed under conditions of quasistatic hydrostatic compression. Additionally, the blueshift in the shock experiments is much smaller than that in hydrostatic experiments at the same pressure levels. The differences in responses are attributed to the different stress states achieved in the shock and hydrostatic experiments and the time dependence of the mechanical response of the polymer in the composite. The findings offer a potential guide for the design and development of materials for internal stress sensors for shock conditions.

  13. Quantum Dots: Theory

    Energy Technology Data Exchange (ETDEWEB)

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

  14. Ultrasmall silicon quantum dots

    NARCIS (Netherlands)

    Zwanenburg, F.A.; Van Loon, A.A.; Steele, G.A.; Rijmenam, C.E.W.M.; Balder, T.; Fang, Y.; Lieber, C.M.; Kouwenhoven, L.P.

    2009-01-01

    We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and

  15. Synthesis of quantum dots

    Science.gov (United States)

    McDaniel, Hunter

    2017-10-17

    Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

  16. Single quantum dots fundamentals, applications, and new concepts

    CERN Document Server

    2003-01-01

    This book reviews recent advances in the exciting and rapid growing field of semiconductor quantum dots by contributions from some of the most prominent researchers in the field. Special focus is given to the optical and electronic properties of single quantum dots due to their potential applications in devices operating with single electrons and/or single photons. This includes quantum dots in electric and magnetic fields, cavity-quantum electrodynamics, nonclassical light generation, and coherent optical control of excitons. Single Quantum Dots also addresses various growth techniques as well as potential device applications such as quantum dot lasers, and new concepts like a single-photon source, and a single quantum dot laser.

  17. Quantum dot molecules

    CERN Document Server

    Wu, Jiang

    2014-01-01

    This book reviews recent advances in the exciting and rapidly growing field of quantum dot molecules (QDMs). It offers state-of-the-art coverage of novel techniques and connects fundamental physical properties with device design.

  18. Graphene quantum dots

    CERN Document Server

    Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel

    2014-01-01

    This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of

  19. Synthesis and characterization of CdSe/ZnS core-shell quantum dots immobilized on solid substrates through laser irradiation

    International Nuclear Information System (INIS)

    Gyoergy, E.; Perez del Pino, A.; Roqueta, J.; Ballesteros, B.; Miguel, A.S.; Maycock, C.; Oliva, A.G.

    2012-01-01

    CdSe/ZnS core-shell quantum dots (QDs) have been immobilized onto solid substrates by matrix assisted pulsed laser evaporation (MAPLE). An UV KrF* (λ = 248 nm, τ FWHM ≅ 25 ns) excimer laser source was used for irradiations of the composite MAPLE targets. The targets were prepared by the dispersion of the CdSe/ZnS QDs in a solvent with high absorption at the incident laser radiation. The dependence of the surface morphology, crystalline structure, chemical composition, and functional properties of the laser transferred CdSe/ZnS QDs on the processing conditions as incident laser fluence value and ambient atmosphere inside the irradiation chamber was investigated. The possible physical mechanisms implied in the laser ablation process were identified. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Synthesis and characterization of CdSe/ZnS core-shell quantum dots immobilized on solid substrates through laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Gyoergy, E. [Centre d' Investigacions en Nanociencia i Nanotecnologia, Institut Catala de Nanotecnologia, Consejo Superior de Investigaciones Cientificas (CIN2, ICN-CSIC), Bellaterra (Spain); National Institute for Lasers, Plasma and Radiation Physics, Bucharest (Romania); Perez del Pino, A. [Instituto de Ciencia de Materiales de Barcelona, Consejo Superior de Investigaciones Cientificas (ICMAB, CSIC), Bellaterra (Spain); Roqueta, J.; Ballesteros, B. [Centre d' Investigacions en Nanociencia i Nanotecnologia, Institut Catala de Nanotecnologia, Consejo Superior de Investigaciones Cientificas (CIN2, ICN-CSIC), Bellaterra (Spain); Miguel, A.S.; Maycock, C.; Oliva, A.G. [Instituto de Tecnologia Quimica e Biologica, Universidade Nova de Lisboa (ITQB-UNL), Oeiras (Portugal)

    2012-11-15

    CdSe/ZnS core-shell quantum dots (QDs) have been immobilized onto solid substrates by matrix assisted pulsed laser evaporation (MAPLE). An UV KrF* ({lambda} = 248 nm, {tau}{sub FWHM} {approx_equal} 25 ns) excimer laser source was used for irradiations of the composite MAPLE targets. The targets were prepared by the dispersion of the CdSe/ZnS QDs in a solvent with high absorption at the incident laser radiation. The dependence of the surface morphology, crystalline structure, chemical composition, and functional properties of the laser transferred CdSe/ZnS QDs on the processing conditions as incident laser fluence value and ambient atmosphere inside the irradiation chamber was investigated. The possible physical mechanisms implied in the laser ablation process were identified. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Room-temperature dephasing in InAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Märcher

    1999-01-01

    Summary form only given. Semiconductor quantum dots (QDs) are receiving increasing attention for fundamental studies on zero-dimensional confinement and for device applications. Quantum-dot lasers are expected to show superior performances, like high material gain, low and temperature...... stacked layers of InAs-InGaAs-GaAs quantum dots....

  2. Sub-diffraction positioning of a two-photon excited and optically trapped quantum dot

    DEFF Research Database (Denmark)

    Pedersen, Liselotte Jauffred; Kyrsting, Anders Højbo; Christensen, Eva Arnspang

    2014-01-01

    to blueshift. A quantum dot is much smaller than a diffraction limited laser focus and by mapping out the intensity of the focal volume and overlaying this with the positions visited by a quantum dot, a quantum dot is shown often to explore regions of the focal volume where the intensity is too low to render...

  3. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes

    International Nuclear Information System (INIS)

    Gordeev, N. Yu.; Novikov, I. I.; Kuznetsov, A. M.; Shernyakov, Yu. M.; Maximov, M. V.; Zhukov, A. E.; Chunareva, A. V.; Payusov, A. S.; Livshits, D. A.; Kovsh, A. R.

    2010-01-01

    The concept of a diffraction optical filter is used for prevention of high-order mode oscillation in a design of stripe laser diodes with an active region based on InAs/InGaAs quantum dots emitting in the 1.3-μm wavelength range grown on GaAs substrates. Incorporation of such a filter made it possible to increase the width of the stripe and obtain an output power as high as 700 mW with retention of a single-spatial-mode character of lasing.

  4. Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

    2011-01-01

    The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 mu m by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition......, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 mu m wavelength range is demonstrated. VC 2011 American Institute of Physics. [doi:10.1063/1.3634029]...

  5. Preparation of Monolayer MoS2 Quantum Dots using Temporally Shaped Femtosecond Laser Ablation of Bulk MoS2 Targets in Water

    OpenAIRE

    Li, Bo; Jiang, Lan; Li, Xin; Ran, Peng; Zuo, Pei; Wang, Andong; Qu, Liangti; Zhao, Yang; Cheng, Zhihua; Lu, Yongfeng

    2017-01-01

    Zero-dimensional MoS2 quantum dots (QDs) possess distinct physical and chemical properties, which have garnered them considerable attention and facilitates their use in a broad range of applications. In this study, we prepared monolayer MoS2 QDs using temporally shaped femtosecond laser ablation of bulk MoS2 targets in water. The morphology, crystal structures, chemical, and optical properties of the MoS2 QDs were characterized by transmission electron microscopy, X-ray diffraction, Raman spe...

  6. Advancements in the Field of Quantum Dots

    Science.gov (United States)

    Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.

    2012-08-01

    Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.

  7. Transport in quantum dots

    International Nuclear Information System (INIS)

    Deus, Fernanda; Continetino, Mucio

    2011-01-01

    Full text. In this work we study the time dependent transport in interacting quantum dot. This is a zero-dimensional nano structure system which has quantized electronic states. In our purpose, we are interested in studying such system in a Coulomb blockade regime where a mean-field treatment of the electronic correlations are appropriate. The quantum dot is described by an Anderson type of Hamiltonian where the hybridization term arises from the contact with the leads. We consider a time dependence of both the energy of the localized state in the quantum dot and of the hybridization-like term. These time dependent parameters, under certain conditions, induce a current in the quantum dot even in the absence of difference on the chemical potential of the leads. The approach to this non-equilibrium problem requires the use of a Keldysh formalism. We calculate the non- equilibrium Green's functions and obtain results for the average (equilibrium term) and the non-equilibrium values of the electronic occupation number in the dot. we consider the possibility of a magnetic solution, with different values for the average up and down spins in the quantum dot. Our results allow to obtain, for instance, the tunneling current through the dot. The magnetic nature of the dot, for a certain range of parameters should give rise also to an induced spin current through the dot

  8. Catastrophic degradation in high-power InGaAs-AlGaAs strained quantum well lasers and InAs-GaAs quantum dot lasers

    Science.gov (United States)

    Sin, Yongkun; LaLumondiere, Stephen; Foran, Brendan; Ives, Neil; Presser, Nathan; Lotshaw, William; Moss, Steven C.

    2013-03-01

    Reliability and degradation processes in broad-area InGaAs-AlGaAs strained quantum well (QW) lasers are under investigation because these lasers are indispensible as pump lasers for fiber lasers and amplifiers that have found an increasing number of industrial applications in recent years. Extensive efforts by a number of groups to develop InAs-GaAs quantum dot (QD) lasers have recently led to significant improvement in performance characteristics, but due to a short history of commercialization, high power QD lasers lacks studies in reliability and degradation processes. For the present study, we investigated reliability and degradation processes in MOCVD-grown broad-area InGaAs-AlGaAs strained QW lasers as well as in MBE-grown broad-area InAs-GaAs QD lasers using various failure mode analysis (FMA) techniques. Dots for the QD lasers were formed via a self-assembly process during MBE growth. We employed two different methods to degrade lasers during accelerated life-testing: commercial lifetester and our newly developed time-resolved electroluminescence (TR-EL) set-up. Our TR-EL set-up allows us to observe formation of a hot spot and subsequent formation and progression of dark spots and dark lines through windowed n-contacts during entire accelerated life-tests. Deep level transient spectroscopy (DLTS) and time resolved photoluminescence (TR-PL) techniques were employed to study trap characteristics and carrier dynamics in pre- and post-stressed QW and QD lasers to identify the root causes of catastrophic degradation processes in these lasers. We also employed electron beam induced current (EBIC), focused ion beam (FIB), and high resolution TEM to study dark line defects and crystal defects in post-aged QW and QD lasers at different stages of degradation.

  9. Quantum Dot Spectrometer (GSFC IRAD)

    Data.gov (United States)

    National Aeronautics and Space Administration — We are developing an ultra-compact, low mass, low-cost, yet high resolution, multispectral imager based on an innovative quantum dot array concept. The quantum dot...

  10. Hexagonal graphene quantum dots

    KAUST Repository

    Ghosh, Sumit

    2016-12-05

    We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.

  11. Quantum dot solar cells

    CERN Document Server

    Wu, Jiang

    2013-01-01

    The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

  12. Effect of temperature on quantum dots

    Indian Academy of Sciences (India)

    MAHDI AHMADI BORJI

    2017-07-12

    Jul 12, 2017 ... Quantum dot semiconductor lasers, due to the discrete density of states, low threshold current and ... energy states, strain, and other physical features, and their change by varying some factors such as ... tion 2 explains the model and method of the numerical simulation. Our results and discussions on the ...

  13. Carbon nanotube quantum dots

    NARCIS (Netherlands)

    Sapmaz, S.

    2006-01-01

    Low temperature electron transport measurements on individual single wall carbon nanotubes are described in this thesis. Carbon nanotubes are small hollow cylinders made entirely out of carbon atoms. At low temperatures (below ~10 K) finite length nanotubes form quantum dots. Because of its small

  14. Femtosecond laser ablation of highly oriented pyrolytic graphite: a green route for large-scale production of porous graphene and graphene quantum dots

    Science.gov (United States)

    Russo, Paola; Hu, Anming; Compagnini, Giuseppe; Duley, Walter W.; Zhou, Norman Y.

    2014-01-01

    Porous graphene (PG) and graphene quantum dots (GQDs) are attracting attention due to their potential applications in photovoltaics, catalysis, and bio-related fields. We present a novel way for mass production of these promising materials. The femtosecond laser ablation of highly oriented pyrolytic graphite (HOPG) is employed for their synthesis. Porous graphene (PG) layers were found to float at the water-air interface, while graphene quantum dots (GQDs) were dispersed in the solution. The sheets consist of one to six stacked layers of spongy graphene, which form an irregular 3D porous structure that displays pores with an average size of 15-20 nm. Several characterization techniques have confirmed the porous nature of the collected layers. The analyses of the aqueous solution confirmed the presence of GQDs with dimensions of about 2-5 nm. It is found that the formation of both PG and GQDs depends on the fs-laser ablation energy. At laser fluences less than 12 J cm-2, no evidence of either PG or GQDs is detected. However, polyynes with six and eight carbon atoms per chain are found in the solution. For laser energies in the 20-30 J cm-2 range, these polyynes disappeared, while PG and GQDs were found at the water-air interface and in the solution, respectively. The origin of these materials can be explained based on the mechanisms for water breakdown and coal gasification. The absence of PG and GQDs, after the laser ablation of HOPG in liquid nitrogen, confirms the proposed mechanisms.Porous graphene (PG) and graphene quantum dots (GQDs) are attracting attention due to their potential applications in photovoltaics, catalysis, and bio-related fields. We present a novel way for mass production of these promising materials. The femtosecond laser ablation of highly oriented pyrolytic graphite (HOPG) is employed for their synthesis. Porous graphene (PG) layers were found to float at the water-air interface, while graphene quantum dots (GQDs) were dispersed in the

  15. High resolution detection of high mass proteins up to 80,000 Da via multifunctional CdS quantum dots in laser desorption/ionization mass spectrometry.

    Science.gov (United States)

    Ke, Yaotang; Kailasa, Suresh Kumar; Wu, Hui-Fen; Chen, Zhen-Yu

    2010-11-15

    CdS quantum dots (∼ 5 nm) are used as multifunctional nanoprobes as an effective matrix for large proteins, peptides and as affinity probes for the enrichment of tryptic digest proteins (lysozyme, myoglobin and cytochrome c) in laser desorption/ionization time-of-flight mass spectrometry (LDI-TOF MS). The use of CdS quantum dots (CdS QDs) as the matrix allows acquisition of high resolution LDI mass spectra for large proteins (5000-80,000 Da). The enhancement of mass resolution is especially notable for large proteins such as BSA, HSA and transferrin (34-49 times) when compared with those obtained by using SA as the matrix. This technique demonstrates the potentiality of LDI-TOF-MS as an appropriate analytical tool for the analysis of high-molecular-weight biomolecules with high mass resolution. In addition, CdS QDs are also used as matrices for background-free detection of small biomolecules (peptides) and as affinity probes for the enrichment of tryptic digest proteins in LDI-TOF-MS. Copyright © 2010 Elsevier B.V. All rights reserved.

  16. Femtosecond laser ablation of highly oriented pyrolytic graphite: a green route for large-scale production of porous graphene and graphene quantum dots.

    Science.gov (United States)

    Russo, Paola; Hu, Anming; Compagnini, Giuseppe; Duley, Walter W; Zhou, Norman Y

    2014-02-21

    Porous graphene (PG) and graphene quantum dots (GQDs) are attracting attention due to their potential applications in photovoltaics, catalysis, and bio-related fields. We present a novel way for mass production of these promising materials. The femtosecond laser ablation of highly oriented pyrolytic graphite (HOPG) is employed for their synthesis. Porous graphene (PG) layers were found to float at the water-air interface, while graphene quantum dots (GQDs) were dispersed in the solution. The sheets consist of one to six stacked layers of spongy graphene, which form an irregular 3D porous structure that displays pores with an average size of 15-20 nm. Several characterization techniques have confirmed the porous nature of the collected layers. The analyses of the aqueous solution confirmed the presence of GQDs with dimensions of about 2-5 nm. It is found that the formation of both PG and GQDs depends on the fs-laser ablation energy. At laser fluences less than 12 J cm(-2), no evidence of either PG or GQDs is detected. However, polyynes with six and eight carbon atoms per chain are found in the solution. For laser energies in the 20-30 J cm(-2) range, these polyynes disappeared, while PG and GQDs were found at the water-air interface and in the solution, respectively. The origin of these materials can be explained based on the mechanisms for water breakdown and coal gasification. The absence of PG and GQDs, after the laser ablation of HOPG in liquid nitrogen, confirms the proposed mechanisms.

  17. Real-Time 200 Gb/s (4x56.25 Gb/s) PAM-4 Transmission over 80 km SSMF using Quantum-Dot Laser and Silicon Ring-Modulator

    DEFF Research Database (Denmark)

    Eiselt, Nicklas; Griesser, Helmut; Eiselt, Michael

    2017-01-01

    We report real-time 4x56.26-Gb/s DWDM PAM-4 transmission over 80-km SSMF with novel optical transmitter sub-assembly comprising multi-wavelength quantum-dot laser and silicon ring modulators. Pre-FEC BERs below 1E-4 are achieved after 80-km, allowing error-free operation with HD-FEC...

  18. Comparison of the noise performance of 10 GHz repetition rate quantum-dot and quantum well monolithic mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Carpintero, G.; Thompson, M. G.; Yvind, Kresten

    2011-01-01

    Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices...... fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic...... and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre...

  19. Nanocrystal quantum dots

    CERN Document Server

    Klimov, Victor I

    2010-01-01

    ""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do

  20. Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

    Directory of Open Access Journals (Sweden)

    Cao Q

    2007-01-01

    Full Text Available AbstractTen-layer InAs/In0.15Ga0.85As quantum dot (QD laser structures have been grown using molecular beam epitaxy (MBE on GaAs (001 substrate. Using the pulsed anodic oxidation technique, narrow (2 μm ridge waveguide (RWG InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm2 delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm2 delivered extremely high output power (both facets of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation.

  1. Silicon quantum dots: surface matters

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina

    2014-01-01

    Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014

  2. Quantum dot cadmium selenide as a saturable absorber for Q-switched and mode-locked double-clad ytterbium-doped fiber lasers

    Science.gov (United States)

    Mahyuddin, M. B. H.; Latiff, A. A.; Rusdi, M. F. M.; Irawati, N.; Harun, S. W.

    2017-08-01

    This paper demonstrates the integration of quantum dot (QD) cadmium selenide (CdSe) nanoparticles, which is embedded into polymethyl methacrylate (PMMA) film into an ytterbium-doped fiber laser (YDFL) cavity to produce Q-switched and mode-locked fiber lasers. The QD CdSe based film functions as a saturable absorber (SA). For Q-switching operation, stable pulse is generated within 970-1200 mW pump power, with tunable repetition rate and pulse width of 24.5-40.5 kHz and 6.8-3.7 μs, respectively. Maximum pulse energy and peak power are obtained about 1.1 μJ and 0.28 W, respectively. As we tune the polarization state of the laser cavity and use a single QD CdSe film, the mode-locking operation could also be generated within 310-468 mW pump power with repetition rate of 14.5 MHz and pulse width of 3.5 ps. Maximum pulse energy and peak power are obtained about 2 nJ and 0.11 W, respectively. These results may contribute to continuous research work on laser pulse generation, providing new opportunities of CdSe material in photonics applications.

  3. Quantum dot conjugates in a sub-micrometer fluidic channel

    Science.gov (United States)

    Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.

    2010-04-13

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  4. Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

    International Nuclear Information System (INIS)

    Isnaeni,; Yulianto, Nursidik; Suliyanti, Maria Margaretha

    2016-01-01

    We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

  5. PREFACE: Quantum Dot 2010

    Science.gov (United States)

    Taylor, Robert A.

    2010-09-01

    These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur

  6. Modeling and characterization of pulse shape and pulse train dynamics in two-section passively mode-locked quantum dot lasers

    Science.gov (United States)

    Raghunathan, R.; Mee, J. K.; Crowley, M. T.; Grillot, F.; Kovanis, V.; Lester, L. F.

    2013-03-01

    A nonlinear delay differential equation model for passive mode-locking in semiconductor lasers, seeded with parameters extracted from the gain and loss spectra of a quantum dot laser, is employed to simulate and study the dynamical regimes of mode-locked operation of the device. The model parameter ranges corresponding to these regimes are then mapped to externally-controllable parameters such as gain current and absorber bias voltage. Using this approach, a map indicating the approximate regions corresponding to fundamental and harmonically mode locked operation is constructed as a function of gain current and absorber bias voltage. This is shown to be a highly useful method of getting a sense of the highest repetition rates achievable in principle with a simple, two-section device, and provides a guideline toward achieving higher repetition rates by simply adjusting external biasing conditions instantaneously while the device is in operation, as opposed to re-engineering the device with additional passive or saturable absorber sections. The general approach could potentially aid the development of numerical modeling techniques aimed at providing a systematic guideline geared toward developing microwave and RF photonic sources for THz applications.

  7. Quantum Dots in Liquid Scintillator

    Science.gov (United States)

    Gooding, Diana

    2017-09-01

    Quantum dots are semiconducting crystals with dimensions on the order of nanometers. Due to quantum confinement, their size gives rise to optical properties that resemble those of single atoms, rather than bulk material. One of these is their absorption of light shorter than a characteristic wavelength and reemission in a narrow peak around that wavelength. This unique photoluminescence makes quantum dots ideal wavelength shifters. Moreover, their chemistry provides a straight-forward method to suspend heavy elements in organic scintillators. The NuDot collaboration has been pursuing a variety of new quantum dots, and a review of the current results will be presented.

  8. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s-1 directly modulated lasers and 40 Gb s-1 signal-regenerative amplifiers

    International Nuclear Information System (INIS)

    Sugawara, M; Hatori, N; Ishida, M; Ebe, H; Arakawa, Y; Akiyama, T; Otsubo, K; Yamamoto, T; Nakata, Y

    2005-01-01

    This paper presents recent progress in the field of semiconductor lasers and optical amplifiers with InAs-based self-assembled quantum dots in the active region for optical telecommunication. Based on our design in terms of the maximum bandwidth for high-speed modulation and p-type doping in quantum dots for high temperature stability, we realized temperature-insensitive 10 Gb s -1 laser diodes on a GaAs substrate at 1.3 μm. The output waveform at 10 Gb s -1 maintained a clear eye opening, average output power and extinction ratio without current adjustments from 20 deg. C to 70 deg. C. We developed ultrawide-band high-power amplifiers in the 1.5 μm wavelength region on an InP substrate. The amplifier showed ultrafast gain response under gain saturation, and enabled signal regeneration at 40 Gb s -1 by suppressing the '1'-level noise due to the beating between the signal and amplified spontaneous emission. We present our amplifier module with polarization diversity to enable a stable polarization-insensitive performance, and also, discuss prospects for polarization-insensitive quantum dots by the close stacking technique

  9. Quantum-dot-in-perovskite solids

    KAUST Repository

    Ning, Zhijun

    2015-07-15

    © 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned \\'dots-in-a-matrix\\' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

  10. Quadra-Quantum Dots and Related Patterns of Quantum Dot Molecules: Basic Nanostructures for Quantum Dot Cellular Automata Application

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2010-10-01

    Full Text Available Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called 'Droplet Epitaxy' has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390'C with a droplet growth rate of 1ML/s. Arsenic flux (7'8'10-6Torr is then exposed for InGaAs crystallization at 200'C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or, which are preferable crystallographic directions of quantum dot alignment in general.

  11. High-Performance solar-blind flexible Deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

    KAUST Repository

    Mitra, Somak

    2018-03-31

    High-performance deep ultraviolet (DUV) photodetectors operating at ambient conditions with < 280nm detection wavelengths are in high demand because of their potential applications in diverse fields. We demonstrate for the first time, high-performance flexible DUV photodetectors operating at ambient conditions based on quantum dots (QDs) synthesized by femtosecond-laser ablation in liquid (FLAL) technique. Our method is facile without complex chemical procedures, which allows large-scale cost-effective devices. This synthesis method is demonstrated to produce highly stable and reproducible ZnO QDs from zinc nitride target (Zn3N2) without any material degradation due to water and oxygen molecule species, allowing photodetectors operate at ambient conditions. Carbon-doped ZnO QD-based photodetector is capable of detecting efficiently in the DUV spectral region, down to 224nm, and exhibits high photo responsivity and stability. As fast response of DUV photodetector remains significant parameter for high-speed communication; we show fast-response QD-based DUV photodetector. Such surfactant-free synthesis by FLAL can lead to commercially available high-performance low-cost optoelectronic devices based on nanostructures for large scale applications.

  12. Towards Ideal Quantum Dots

    Directory of Open Access Journals (Sweden)

    Vyacheslav A. Elyukhin

    2013-01-01

    Full Text Available Arrays of single photon emitters with the same energy of luminescence are necessary for the development of quantum imformation technology. The studied epitaxial quantum dots have an undresired inhomogeneity of luminescence. Here, AxB1-xCyD1-y alloys of AC, AD, BC and BD compounds are presented as semiconductors in which non-random distribution of cations and anions may result in self-assembling of identical tetrahedral clusters. It can be due to the preference of AC and BD bonding over AD and BC one, a decrease of the strain energy or both of them. The self-assembling conditions of 1P4Ga clusters in AlN-rich AlxGa1-xPyN1-y alloys with Ga and phosphorus contents in the dilute and ultra dilute limits, correspondingly, are represented. All phosphorus atoms should be in 1P4Ga clusters at ~1000 oC if the Ga content reaches several percents. AlN-rich AlxGa1-xPyN1-y alloys with 1P4Ga clusters are promising semiconductors for fabrication of arrays of identical single photon emitters with the same energy of luminescence

  13. Gain recovery dynamics and limitations in quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Bischoff, Svend; Magnúsdóttir, Ingibjörg

    2001-01-01

    Summary form only given. While ultra-low threshold current densities have been achieved in quantum dot (QD) lasers, the predicted potential for high-speed modulation has not yet been realized despite the high differential gain. Furthermore, recent single pulse experiments demonstrated very fast...... gain recovery in a quantum dot amplifier, and it is thus not yet clear what the limiting processes for the device response are. We present the results of a comprehensive theoretical model, which agrees well with the experimental results, and indicates the importance of slow recovery of higher energy...

  14. Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, Andrea; Borri, Paola; Langbein, Wolfgang

    2000-01-01

    The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 ìm is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature....

  15. The effects of the intense laser field on the nonlinear optical properties of a cylindrical Ga{sub 1−x}Al{sub x}As/GaAs quantum dot under applied electric field

    Energy Technology Data Exchange (ETDEWEB)

    Kasapoglu, E., E-mail: ekasap@cumhuriyet.edu.tr [Department of Physics, Cumhuriyet University, 58140 Sivas (Turkey); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Mora-Ramos, M.E. [Centro de Investigación en Ciencias, Instituto de Ciencias Básicas y Aplicadas, Universidad Autóonoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Sökmen, I. [Department of Physics, Dokuz Eylül University, 35160 Buca, İzmir (Turkey)

    2015-10-01

    In the present work, the effects of the intense laser field on total optical absorption coefficient (the linear and third-order nonlinear) and total refractive index change (the linear and third-order nonlinear) for transitions between different intersubbands in the Ga{sub 1−x}Al{sub x}As/GaAs cylindrical quantum dot under external electric field are investigated. The calculations were performed within the compact density-matrix formalism with the use of the effective mass approximation. The obtained results show that both total absorption coefficient and refractive index change are sensitive to the electric and intense laser fields. By changing the intensities of the electric and laser fields, we can obtain the blue or red shift, without the need for the growth of many different samples. - Highlights: • The effects of the non-resonant intense laser field and electric field on the nonlinear optical properties of cylindrical quantum dot are investigated. • The both total absorption coefficient and refractive index change are sensitive to dot dimensions and the effects of external fields. • By changing the external fields together with dot dimensions a blue or red shift can be obtained.

  16. Perspective: The future of quantum dot photonic integrated circuits

    Directory of Open Access Journals (Sweden)

    Justin C. Norman

    2018-03-01

    Full Text Available Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS foundries.

  17. Perspective: The future of quantum dot photonic integrated circuits

    Science.gov (United States)

    Norman, Justin C.; Jung, Daehwan; Wan, Yating; Bowers, John E.

    2018-03-01

    Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

  18. Large quantum dots with small oscillator strength

    DEFF Research Database (Denmark)

    Stobbe, Søren; Schlereth, T.W.; Höfling, S.

    2010-01-01

    We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots...... is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size assuming a quantum-dot confinement given by a parabolic in-plane potential and a hard-wall vertical potential and predict a very large...... intermixing inside the quantum dots....

  19. Quantum optics with single quantum dot devices

    International Nuclear Information System (INIS)

    Zwiller, Valery; Aichele, Thomas; Benson, Oliver

    2004-01-01

    A single radiative transition in a single-quantum emitter results in the emission of a single photon. Single quantum dots are single-quantum emitters with all the requirements to generate single photons at visible and near-infrared wavelengths. It is also possible to generate more than single photons with single quantum dots. In this paper we show that single quantum dots can be used to generate non-classical states of light, from single photons to photon triplets. Advanced solid state structures can be fabricated with single quantum dots as their active region. We also show results obtained on devices based on single quantum dots

  20. Nuclear Spins in Quantum Dots

    NARCIS (Netherlands)

    Erlingsson, S.I.

    2003-01-01

    The main theme of this thesis is the hyperfine interaction between the many lattice nuclear spins and electron spins localized in GaAs quantum dots. This interaction is an intrinsic property of the material. Despite the fact that this interaction is rather weak, it can, as shown in this thesis,

  1. Polymer-coated quantum dots

    NARCIS (Netherlands)

    Tomczak, N.; Liu, Rongrong; Vancso, Gyula J.

    2013-01-01

    Quantum Dots (QDs) are semiconductor nanocrystals with distinct photophysical properties finding applications in biology, biosensing, and optoelectronics. Polymeric coatings of QDs are used primarily to provide long-term colloidal stability to QDs dispersed in solutions and also as a source of

  2. Spin storage in quantum dot ensembles and single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Dominik

    2009-10-15

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

  3. Spin storage in quantum dot ensembles and single quantum dots

    International Nuclear Information System (INIS)

    Heiss, Dominik

    2009-01-01

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with

  4. Quadra-quantum Dots and Related Patterns of Quantum Dot Molecules:

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2010-10-01

    Full Text Available Abstract Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called ‘‘Droplet Epitaxy” has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390°C with a droplet growth rate of 1ML/s. Arsenic flux (7–8×10-6Torr is then exposed for InGaAs crystallization at 200°C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or , which are preferable crystallographic directions of quantum dot alignment in general.

  5. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum dots are nanoscale materials that have already improved the performance of optical sensors, lasers, and light emitting diodes. The unique properties of these...

  6. High Efficiency Quantum Dot III-V Thermophotovoltaic Cell for Space Power, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum dots are nanoscale materials that have already improved the performance of optical sensors, lasers, light emitting diodes and solar cells. The unique...

  7. Carrier multiplication and exciton behavior in PbSe quantum dots

    NARCIS (Netherlands)

    Tuan Trinh, M.

    2010-01-01

    Knowledge of excited electronic states in semiconductor quantum dots (QDs) is of fundamental scientific interest and is important for application in lasers, optical detectors, LEDs, solar cells, photocatalysis, biomedical imaging, photodynamic therapy etc. In the past few years, carrier

  8. Three-Dimensional Dissipative Optical Solitons in a Dielectric Medium with Quantum Dots

    Directory of Open Access Journals (Sweden)

    Gubin M.Yu.

    2015-01-01

    Full Text Available We consider the problem of formation of three-dimensional spatio-temporal dissipative solitons (laser bullets in a dense ensemble of two-level quantum dots. The principal possibility of effective laser bullets generation in an all-dielectric metamaterials with quantum dots is shown. The phenomenon arises due to the simultaneous appearance of strong local field effects and significant corrections to diffraction effects during the propagation of short optical pulses in such medium.

  9. Ultrasmall colloidal PbS quantum dots

    International Nuclear Information System (INIS)

    Reilly, Nick; Wehrung, Michael; O'Dell, Ryan Andrew; Sun, Liangfeng

    2014-01-01

    Ultrasmall colloidal lead sulfide quantum dots can increase the open circuit voltages of quantum-dot-based solar cells because of their large energy gap. Their small size and visible or near infrared light-emitting property make them attractive to the applications of biological fluorescence labeling. Through a modified organometallic route, we can synthesize lead sulfide quantum dots as small as 1.6 nm in diameter. The low reaction temperature and the addition of a chloroalkane cosolvent decrease the reaction rate, making it possible to obtain the ultrasmall quantum dots. - Highlights: • Ultrasmall colloidal PbS quantum dots as small as 1.6 nm in diameter are synthesized. • The quantum dots emit red light with photoluminescence peak at 760 nm. • The growth temperature is as low as 50 °C. • Addition of cosolvent 1,2-dichloroethane in the reaction decreases the reaction rate

  10. High Operating Temperature Midwave Quantum Dot Barrier Infrared Detector (QD-BIRD)

    Science.gov (United States)

    Ting, David Z.; Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Mumolo, Jason M.; Gunapala, Sarath D.

    2012-01-01

    The nBn or XBn barrier infrared detector has the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. High performance detectors and focal plane arrays (FPAs) based on InAsSb absorber lattice matched to GaSb substrate, with a matching AlAsSb unipolar electron barrier, have been demonstrated. The band gap of lattice-matched InAsSb yields a detector cutoff wavelength of approximately 4.2 ??m when operating at 150K. We report results on extending the cutoff wavelength of midwave barrier infrared detectors by incorporating self-assembled InSb quantum dots into the active area of the detector. Using this approach, we were able to extend the detector cutoff wavelength to 6 ?m, allowing the coverage of the full midwave infrared (MWIR) transmission window. The quantum dot barrier infrared detector (QD-BIRD) shows infrared response at temperatures up to 225 K.

  11. Orientation-dependent imaging of electronically excited quantum dots

    Science.gov (United States)

    Nguyen, Duc; Goings, Joshua J.; Nguyen, Huy A.; Lyding, Joseph; Li, Xiaosong; Gruebele, Martin

    2018-02-01

    We previously demonstrated that we can image electronic excitations of quantum dots by single-molecule absorption scanning tunneling microscopy (SMA-STM). With this technique, a modulated laser beam periodically saturates an electronic transition of a single nanoparticle, and the resulting tunneling current modulation ΔI(x0, y0) maps out the SMA-STM image. In this paper, we first derive the basic theory to calculate ΔI(x0, y0) in the one-electron approximation. For near-resonant tunneling through an empty orbital "i" of the nanostructure, the SMA-STM signal is approximately proportional to the electron density |φi) (x0,y0)|imaged. We then show experimentally that we can nudge quantum dots on the surface and roll them, thus imaging excited state electronic structure of a single quantum dot at different orientations. We use density functional theory to model ODMs at various orientations, for qualitative comparison with the SMA-STM experiment. The model demonstrates that our experimentally observed signal monitors excited states, localized by defects near the surface of an individual quantum dot. The sub-nanometer super-resolution imaging technique demonstrated here could become useful for mapping out the three-dimensional structure of excited states localized by defects within nanomaterials.

  12. Millimeter Wave Modulators Using Quantum Dots

    National Research Council Canada - National Science Library

    Prather, Dennis W

    2008-01-01

    In this effort electro-optic modulators for millimeter wave sensing and imaging were developed and demonstrated via design, fabrication, and experimental characterization of multi layer quantum dot...

  13. Designing artificial 2D crystals with site and size controlled quantum dots.

    Science.gov (United States)

    Xie, Xuejun; Kang, Jiahao; Cao, Wei; Chu, Jae Hwan; Gong, Yongji; Ajayan, Pulickel M; Banerjee, Kaustav

    2017-08-30

    Ordered arrays of quantum dots in two-dimensional (2D) materials would make promising optical materials, but their assembly could prove challenging. Here we demonstrate a scalable, site and size controlled fabrication of quantum dots in monolayer molybdenum disulfide (MoS 2 ), and quantum dot arrays with nanometer-scale spatial density by focused electron beam irradiation induced local 2H to 1T phase change in MoS 2 . By designing the quantum dots in a 2D superlattice, we show that new energy bands form where the new band gap can be controlled by the size and pitch of the quantum dots in the superlattice. The band gap can be tuned from 1.81 eV to 1.42 eV without loss of its photoluminescence performance, which provides new directions for fabricating lasers with designed wavelengths. Our work constitutes a photoresist-free, top-down method to create large-area quantum dot arrays with nanometer-scale spatial density that allow the quantum dots to interfere with each other and create artificial crystals. This technique opens up new pathways for fabricating light emitting devices with 2D materials at desired wavelengths. This demonstration can also enable the assembly of large scale quantum information systems and open up new avenues for the design of artificial 2D materials.

  14. Characterization of graphene quantum dot hybrid structures

    Science.gov (United States)

    Chung, Ting-Fung; Hu, Jiuning; Jauregui, Luis A.; Chen, Liangliang; Zhao, Qing; Ruan, Xiulin; Chen, Yong P.

    2012-02-01

    We report electrical transport, photo-electric response and Raman spectroscopy measurements in macroscopic samples of graphene decorated with inorganic quantum dots (CdSe QDs). QDs are deposited on chemical vapor deposition (CVD) graphene by spin-coating. Raman measurements of graphene decorated with QDs on Si wafer show very similar spectra with clear G and 2D peaks that reveal no degradation of graphene during the QDs deposition process. Furthermore, two types of device architectures (QDs-graphene and graphene-QDs-graphene) are fabricated with graphene as a transparent electrode and QD as a light absorbent for electrical photoresponse characterization. Upon application of either a broadband light source or a 532-nm monochromatic laser source, graphene-QDs-graphene devices demonstrate photoconducting response, but not in the case of QDs-graphene devices.

  15. Thick-shell nanocrystal quantum dots

    Science.gov (United States)

    Hollingsworth, Jennifer A [Los Alamos, NM; Chen, Yongfen [Eugene, OR; Klimov, Victor I [Los Alamos, NM; Htoon, Han [Los Alamos, NM; Vela, Javier [Los Alamos, NM

    2011-05-03

    Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

  16. Stark shifting two-electron quantum dot

    International Nuclear Information System (INIS)

    Dineykhan, M.; Zhaugasheva, S.A.; Duysebaeva, K.S.

    2003-01-01

    Advances in modern technology make it possible to create semiconducting nano-structures (quantum dot) in which a finite number of electrons are 'captured' in a bounded volume. A quantum dot is associated with a quantum well formed at the interface, between two finite-size semiconductors owing to different positions of the forbidden gaps on the energy scale in these semiconductors. The possibility of monitoring and controlling the properties of quantum dots attracts considerable attention to these objects, as a new elemental basis for future generations of computers. The quantum-mechanical effects and image potential play a significant role in the description of the formation mechanism quantum dot, and determined the confinement potential in a two-electron quantum dot only for the spherical symmetric case. In the present talk, we considered the formation dynamics of two-electron quantum dot with violation of spherical symmetry. So, we have standard Stark potential. The energy spectrum two-electron quantum dot were calculated. Usually Stark interactions determined the tunneling phenomena between quantum dots

  17. Many electron effects in semiconductor quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 26; Issue 1. Many electron effects in ... Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, ... Our calculations have been performed in a three-dimensional quantum dot. We have carried out a study of ...

  18. Electron correlations in quantum dots

    International Nuclear Information System (INIS)

    Tipton, Denver Leonard John

    2001-01-01

    Quantum dot structures confine electrons in a small region of space. Some properties of semiconductor quantum dots, such as the discrete energy levels and shell filling effects visible in addition spectra, have analogies to those of atoms and indeed dots are sometimes referred to as 'artificial atoms'. However, atoms and dots show some fundamental differences due to electron correlations. For real atoms, the kinetic energy of electrons dominates over their mutual Coulomb repulsion energy and for this reason the independent electron approximation works well. For quantum dots the confining potential may be shallower than that of real atoms leading to lower electron densities and a dominance of mutual Coulomb repulsion over kinetic energy. In this strongly correlated regime the independent electron picture leads to qualitatively incorrect results. This thesis concentrates on few-electron quantum dots in the strongly correlated regime both for quasi-one-dimensional and two-dimensional dots in a square confining potential. In this so-called 'Wigner' regime the ground-state electronic charge density is localised near positions of classical electrostatic minima and the interacting electronic spectrum consists of well separated spin multiplets. In the strongly correlated regime the structure of low-energy multiplets is explained by mapping onto lattice models with extended-Hubbard and Heisenberg effective Hamiltonians. The parameters for these effective models are calculated within a Hartree approximation and are shown to reproduce well the exact results obtained by numerical diagonalisation of the full interacting Hamiltonian. Comparison is made between square dots and quantum rings with full rotational symmetry. In the very low-density regime, direct diagonalisation becomes impractical due to excessive computer time for convergence. In this regime a numerical renormalisation group method is applied to one-dimensional dots, enabling effective spin-interactions to be

  19. Quantum Dot Devices for Optical Signal Processing

    DEFF Research Database (Denmark)

    Chen, Yaohui

    This thesis describes the physics and applications of quantum dot semiconductor optical ampliers through numerical simulations. As nano-structured materials with zero-dimensional quantum connement, semiconductor quantum dot material provides a number of unique physical properties compared...... with other semiconductor materials. The understanding of such properties is important in order to improve the performance of existing devices and to trigger the development of new semiconductor devices for dierent optical signal processing functionalities in the future. We present a detailed quantum dot...... semiconductor optical amplier model incorporating a carrier dynamics rate equation model for quantum dots with inhomogeneous broadening as well as equations describing propagation. A phenomenological description has been used to model the intradot electron scattering between discrete quantum dot states...

  20. Hydrogenic impurity in double quantum dots

    International Nuclear Information System (INIS)

    Wang, X.F.

    2007-01-01

    The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically

  1. Biocompatible Quantum Dots for Biological Applications

    Science.gov (United States)

    Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.

    2011-01-01

    Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935

  2. Magnon-driven quantum dot refrigerators

    International Nuclear Information System (INIS)

    Wang, Yuan; Huang, Chuankun; Liao, Tianjun; Chen, Jincan

    2015-01-01

    Highlights: • A three-terminal quantum dot refrigerator is proposed. • The effects of magnetic field, applied voltage, and polarization are considered. • The region that the system can work as a refrigerator is determined. • Two different magnon-driven quantum dot refrigerators are compared. - Abstract: A new model of refrigerator consisting of a spin-splitting quantum dot coupled with two ferromagnetic reservoirs and a ferromagnetic insulator is proposed. The rate equation is used to calculate the occupation probabilities of the quantum dot. The expressions of the electron and magnon currents are obtained. The region that the system can work in as a refrigerator is determined. The cooling power and coefficient of performance (COP) of the refrigerator are derived. The influences of the magnetic field, applied voltage, and polarization of two leads on the performance are discussed. The performances of two different magnon-driven quantum dot refrigerators are compared.

  3. Complementary Barrier Infrared Detector (CBIRD) with Double Tunnel Junction Contact and Quantum Dot Barrier Infrared Detector (QD-BIRD)

    Science.gov (United States)

    Ting, David Z.-Y; Soibel, Alexander; Khoshakhlagh, Arezou; Keo, Sam A.; Nguyen, Jean; Hoglund, Linda; Mumolo, Jason M.; Liu, John K.; Rafol, Sir B.; Hill, Cory J.; hide

    2012-01-01

    The InAs/GaSb type-II superlattice based complementary barrier infrared detector (CBIRD) has already demonstrated very good performance in long-wavelength infrared (LWIR) detection. In this work, we describe results on a modified CBIRD device that incorporates a double tunnel junction contact designed for robust device and focal plane array processing. The new device also exhibited reduced turn-on voltage. We also report results on the quantum dot barrier infrared detector (QD-BIRD). By incorporating self-assembled InSb quantum dots into the InAsSb absorber of the standard nBn detector structure, the QD-BIRD extend the detector cutoff wavelength from approximately 4.2 micrometers to 6 micrometers, allowing the coverage of the mid-wavelength infrared (MWIR) transmission window. The device has been observed to show infrared response at 225 K.

  4. Electron transport in quantum dots

    CERN Document Server

    2003-01-01

    When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the...

  5. High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 um Tunnel Injection Laser

    KAUST Repository

    Bhowmick, Sishir

    2014-01-01

    The characteristics of 1.55 ? InAs self-organized quantum-dot lasers, grown on (001) InP substrates by molecular beam epitaxy, have been investigated. Modulation doping of the dots with holes and tunnel injection of electrons have been incorporated in the design of the active (gain) region of the laser heterostructure. Large values of To=227 K (5 °C ? T ?45 °C) and 100 K (45 °C ? T ? 75 °C) were derived from temperature dependent measurements of the light-current characteristics. The modal gain per dot layer is 14.5 cm -1 and the differential gain derived from both light-current and small-signal modulation measurements is 0.8}\\times 10-15 cm}2. The maximum measured 3 rm dB small-signal modulation bandwidth is 14.4 GHz and the gain compression factor is 5.4\\times 10-17 cm}2. The lasers are characterized by a chirp of 0.6 AA for a modulation frequency of 10 GHz and a near zero ?-parameter at the peak of the laser emission. These characteristics are amongst the best from any 1.55 ? edge-emitting semiconductor laser. © 1965-2012 IEEE.

  6. Photon control of phonons in mixed crystal quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ingale, Alka

    2003-12-15

    Coherent phonon oscillations in solids can be excited impulsively by a single femtosecond laser pulse whose duration is shorter than a phonon period. In the impulsive stimulated Raman scattering (ISRS) experiment, scattering of probe is monitored as a function of time with respect to pump to generate time domain spectra of coherent phonons. In this paper, we present one such study of CdSe{sub 0.68}Te{sub 0.32} (d{approx}80 A) quantum dots in glass matrix, i.e semiconductor-doped glass (SDG) RG780 from Schott, USA and the experiment was performed at Prof. Merlin's laboratory at the University of Michigan, USA. Here, we present first report of selectively driving only CdSe-like modes in these mixed crystal quantum dots using photon control with two pump beams.

  7. Quantum walks in an array of quantum dots

    International Nuclear Information System (INIS)

    Manouchehri, K; Wang, J B

    2008-01-01

    Quantum random walks are shown to have non-intuitive dynamics, which makes them an attractive area of study for devising quantum algorithms for well-known classical problems as well as those arising in the field of quantum computing. In this work, we propose a novel scheme for the physical implementation of a discrete-time quantum random walk using laser excitations of the electronic states of an array of quantum dots. These dots represent the discrete nodes of the walk, while transitions between the energy levels inside each dot correspond to the required coin operation and stimulated Raman adiabatic passage (STIRAP) processes are employed to induce the steps of the walk. The quantum dot design is tailored in such a way as to enable selective coupling of the energy levels. Our simulation results show a close agreement with the ideal quantum walk distribution as well as modest robustness toward noise disturbance

  8. Spin Switching via Quantum Dot Spin Valves

    Science.gov (United States)

    Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

    2018-01-01

    We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

  9. Electromagnetically induced transparency in quantum dot systems

    International Nuclear Information System (INIS)

    Jiang Yiwen; Zhu Kadi; Wu Zhuojie; Yuan Xiaozhong; Yao Ming

    2006-01-01

    Electromagnetically induced transparency (EIT) in quantum dot exciton systems in which the exciton behaves as a two-level system is investigated theoretically. It is shown that due to strong exciton-phonon coupling EIT can occur in such a quantum dot system and ultraslow light can propagate. The nonlinear optical absorption and Kerr coefficient based on EIT are also calculated. The numerical results show that giant nonlinear optical effects can be obtained while the frequency of the signal field differs only by an amount of LO phonon frequency from the exciton frequency in quantum dot systems

  10. Coherent optoelectronics with single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zrenner, A; Ester, P; Michaelis de Vasconcellos, S; Huebner, M C; Lackmann, L; Stufler, S [Universitaet Paderborn, Department Physik, Warburger Strasse 100, D-33098 Paderborn (Germany); Bichler, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)], E-mail: zrenner@mail.upb.de

    2008-11-12

    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  11. Quantum dots for quantum information technologies

    CERN Document Server

    2017-01-01

    This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

  12. Thermoelectric transport through quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Merker, Lukas Heinrich

    2016-06-30

    In this thesis the thermoelectric properties (electrical conductance, Seebeck coefficient and thermal conductance)of quantum dots described by the Anderson impurity model have been investigated by using the numerical renormalization group (NRG) method. In order to make accurate calculations for thermoelectric properties of quantum impurity systems, a number of recent developments and refinements of the NRG have been implemented. These include the z-averaging and Campo discretization scheme, which enable the evaluation of physical quantities on an arbitrary temperature grid and at large discretization parameter Λ and the full density matrix (FDM) approach, which allows a more accurate calculation of spectral functions and transport coefficients. The implementation of the z-averaging and Campo discretization scheme has been tested within a new method for specific heats of quantum impurities. The accuracy of this new method was established by comparison with the numerical solution of the Bethe-ansatz equations for the Anderson model. The FDM approach was implemented and tested within a new approach to the calculation of impurity contributions to the uniform susceptibilities. Within this method a non-negligible contribution from the ''environmental'' degrees of freedom needs to be taken into account to recover the correct susceptibility, as shown by comparison with the Bethe-ansatz approach. An accurate method to calculate the conductance of a quantum dot is implemented, enabling the extraction of the Fermi liquid scaling coefficients c{sub T} and c{sub B} to high accuracy, being able to verify the results of the renormalized super perturbation theory approach (within its regime of validity). The method was generalized to higher order moments of the local level spectral function. This, as well as reduction of the SU(2) code to the U(1) symmetry, enabled the investigation of the effect of a magnetic field on the thermoelectric properties of quantum

  13. Electron Transport in Coupled Quantum Dots

    National Research Council Canada - National Science Library

    Antoniadis, D

    1998-01-01

    In the course of the investigation funded by this proposal we fabricated, modeled, and measured a variety of quantum dot structures in order to better understand how such nanostructures might be used for computation...

  14. Optical Studies of Single Quantum Dots

    National Research Council Canada - National Science Library

    Gammon, Daniel; Steel, Duncan G

    2002-01-01

    ...: the atomlike entities known as quantum dots (QDs). Measuring 1-100 nm across, QDs are semiconductor structures in which the electron wavefunction is confined in all three dimensions by the potential energy barriers that form the QD's boundaries...

  15. Ge Quantum Dot Infrared Imaging Camera Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...

  16. Synthetic Developments of Nontoxic Quantum Dots.

    Science.gov (United States)

    Das, Adita; Snee, Preston T

    2016-03-03

    Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Quantum Computation Using Optically Coupled Quantum Dot Arrays

    Science.gov (United States)

    Pradhan, Prabhakar; Anantram, M. P.; Wang, K. L.; Roychowhury, V. P.; Saini, Subhash (Technical Monitor)

    1998-01-01

    A solid state model for quantum computation has potential advantages in terms of the ease of fabrication, characterization, and integration. The fundamental requirements for a quantum computer involve the realization of basic processing units (qubits), and a scheme for controlled switching and coupling among the qubits, which enables one to perform controlled operations on qubits. We propose a model for quantum computation based on optically coupled quantum dot arrays, which is computationally similar to the atomic model proposed by Cirac and Zoller. In this model, individual qubits are comprised of two coupled quantum dots, and an array of these basic units is placed in an optical cavity. Switching among the states of the individual units is done by controlled laser pulses via near field interaction using the NSOM technology. Controlled rotations involving two or more qubits are performed via common cavity mode photon. We have calculated critical times, including the spontaneous emission and switching times, and show that they are comparable to the best times projected for other proposed models of quantum computation. We have also shown the feasibility of accessing individual quantum dots using the NSOM technology by calculating the photon density at the tip, and estimating the power necessary to perform the basic controlled operations. We are currently in the process of estimating the decoherence times for this system; however, we have formulated initial arguments which seem to indicate that the decoherence times will be comparable, if not longer, than many other proposed models.

  18. Quantum Dot/Liquid Crystal Nanocomposites in Photonic Devices

    Directory of Open Access Journals (Sweden)

    Andrea L. Rodarte

    2015-07-01

    Full Text Available Quantum dot/liquid crystal nano-composites are promising new materials for a variety of applications in energy harvesting, displays and photonics including the liquid crystal laser. To realize many applications, however, we need to control and stabilize nano-particle dispersion in different liquid crystal host phases and understand how the particles behave in an anisotropic fluid. An ideal system will allow for the controlled assembly of either well-defined nano-particle clusters or a uniform particle distribution. In this paper, we investigate mesogen-functionalized quantum dots for dispersion in cholesteric liquid crystal. These nanoparticles are known to assemble into dense stable packings in the nematic phase, and such structures, when localized in the liquid crystal defects, can potentially enhance the coupling between particles and a cholesteric cavity. Controlling the dispersion and assembly of quantum dots using mesogenic surface ligands, we demonstrate how resonant fluid photonic cavities can result from the co-assembly of luminescent nanoparticles in the presence of cholesteric liquid crystalline ordering.

  19. Electron Spin Dynamics in Semiconductor Quantum Dots

    International Nuclear Information System (INIS)

    Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.

    2011-01-01

    An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.

  20. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  1. Positioning of quantum dots on metallic nanostructures

    Science.gov (United States)

    Kramer, R. K.; Pholchai, N.; Sorger, V. J.; Yim, T. J.; Oulton, R.; Zhang, X.

    2010-04-01

    The capability to position individual emitters, such as quantum dots, near metallic nanostructures is highly desirable for constructing active optical devices that can manipulate light at the single photon level. The emergence of the field of plasmonics as a means to confine light now introduces a need for high precision and reliability in positioning any source of emission, which has thus far been elusive. Placing an emission source within the influence of plasmonic structures now requires accuracy approaching molecular length scales. In this paper we report the ability to reliably position nanoscale functional objects, specifically quantum dots, with sub-100-nm accuracy, which is several times smaller than the diffraction limit of a quantum dot's emission light. Electron beam lithography-defined masks on metallic surfaces and a series of surface chemical functionalization processes allow the programmed assembly of DNA-linked colloidal quantum dots. The quantum dots are successfully functionalized to areas as small as (100 nm)2 using the specific binding of thiolated DNA to Au/Ag, and exploiting the streptavidin-biotin interaction. An analysis of the reproducibility of the process for various pattern sizes shows that this technique is potentially scalable to the single quantum dot level with 50 nm accuracy accompanied by a moderate reduction in yield.

  2. Positioning of quantum dots on metallic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kramer, R K; Pholchai, N; Sorger, V J; Yim, T J; Oulton, R; Zhang, X, E-mail: xiang@berkeley.edu [NSF Nanoscale Science and Engineering Center, University of California, Berkeley, CA (United States)

    2010-04-09

    The capability to position individual emitters, such as quantum dots, near metallic nanostructures is highly desirable for constructing active optical devices that can manipulate light at the single photon level. The emergence of the field of plasmonics as a means to confine light now introduces a need for high precision and reliability in positioning any source of emission, which has thus far been elusive. Placing an emission source within the influence of plasmonic structures now requires accuracy approaching molecular length scales. In this paper we report the ability to reliably position nanoscale functional objects, specifically quantum dots, with sub-100-nm accuracy, which is several times smaller than the diffraction limit of a quantum dot's emission light. Electron beam lithography-defined masks on metallic surfaces and a series of surface chemical functionalization processes allow the programmed assembly of DNA-linked colloidal quantum dots. The quantum dots are successfully functionalized to areas as small as (100 nm){sup 2} using the specific binding of thiolated DNA to Au/Ag, and exploiting the streptavidin-biotin interaction. An analysis of the reproducibility of the process for various pattern sizes shows that this technique is potentially scalable to the single quantum dot level with 50 nm accuracy accompanied by a moderate reduction in yield.

  3. O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si.

    Science.gov (United States)

    Wan, Yating; Jung, Daehwan; Norman, Justin; Shang, Chen; MacFarlane, Ian; Li, Qiang; Kennedy, M J; Gossard, Arthur C; Lau, Kei May; Bowers, John E

    2017-10-30

    We report statistical comparisons of lasing characteristics in InAs quantum dot (QD) micro-rings directly grown on on-axis (001) GaP/Si and V-groove (001) Si substrates. CW thresholds as low as 3 mA and high temperature operation exceeding 80 °C were simultaneously achieved on the GaP/Si template template with an outer-ring radius of 50 µm and a ring width of 4 μm, while a sub-milliamp threshold of 0.6 mA was demonstrated on the V-groove Si template with a smaller cavity size of 5-μm outer-ring radius and 3-μm ring width. Evaluations were also made with devices fabricated simultaneously on native GaAs substrates over a significant sampling analysis. The overall assessment spotlights compelling insights in exploring the optimum epitaxial scheme for low-threshold lasing on industry standard Si substrates.

  4. Resonant Raman scattering of ZnS, ZnO, and ZnS/ZnO core/shell quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Milekhin, A.G. [Institute of Semiconductor Physics, Novosibirsk (Russian Federation); Novosibirsk State University, Novosibirsk (Russian Federation); Yeryukov, N.A.; Sveshnikova, L.L.; Duda, T.A. [Institute of Semiconductor Physics, Novosibirsk (Russian Federation); Himcinschi, C. [TU Bergakademie Freiberg, Institut fuer Theoretische Physik, Freiberg (Germany); Zenkevich, E.I. [Belarussian National Technical University, Minsk (Belarus); Zahn, D.R.T. [Chemnitz University of Technology, Semiconductor Physics, Chemnitz (Germany)

    2012-05-15

    Resonant Raman scattering by optical phonon modes as well as their overtones was investigated in ZnS and ZnO quantum dots grown by the Langmuir-Blodgett technique. The in situ formation of ZnS/ZnO core/shell quantum dots was monitored by Raman spectroscopy during laser illumination. (orig.)

  5. Generation of MoS{sub 2} quantum dots by laser ablation of MoS{sub 2} particles in suspension and their photocatalytic activity for H{sub 2} generation

    Energy Technology Data Exchange (ETDEWEB)

    Baldoví, Herme G.; Latorre-Sánchez, Marcos; Esteve-Adell, Iván [Universitat Politècnica de València, Instituto Universitario de Tecnología Química CSIC-UPV and Departamento de Química (Spain); Khan, Anish; Asiri, Abdullah M. [King Abdulaziz University, Center of Excellence for Advanced Materials Research (Saudi Arabia); Kosa, Samia A. [King Abdulaziz University, Chemistry Department, Faculty of Science (Saudi Arabia); Garcia, Hermenegildo, E-mail: hgarcia@qim.upv.es [Universitat Politècnica de València, Instituto Universitario de Tecnología Química CSIC-UPV and Departamento de Química (Spain)

    2016-08-15

    MoS{sub 2} quantum dots (QDs) have been obtained in colloidal suspensions by 532 nm laser ablation (7 ns fwhp/pulse, 50 mJ/pulse) of commercial MoS{sub 2} particles in acetonitrile. High-resolution transmission electron microscopy images show a lateral size distribution from 5 to 20 nm, but a more homogeneous particle size of 20 nm can be obtained by silica gel chromatography purification in acetonitrile. MoS{sub 2} QDs obtained by laser ablation are constituted by 3–6 MoS{sub 2} layers (1.8–4 nm thickness) and exhibit photoluminescence whose λ{sub PL} varies from 430 to 530 nm depending on the excitation wavelength. As predicted by theory, the confinement effect and the larger periphery in MoS{sub 2} QDs increasing the bandgap and having catalytically active edges are reflected in an enhancement of the photocatalytic activity for H{sub 2} generation upon UV–Vis irradiation using CH{sub 3}OH as sacrificial electron donor due to the increase in the reduction potential of conduction band electrons and the electron transfer kinetics.

  6. Amphoteric CdSe nanocrystalline quantum dots.

    Science.gov (United States)

    Islam, Mohammad A

    2008-06-25

    The nanocrystal quantum dot (NQD) charge states strongly influence their electrical transport properties in photovoltaic and electroluminescent devices, optical gains in NQD lasers, and the stability of the dots in thin films. We report a unique electrostatic nature of CdSe NQDs, studied by electrophoretic methods. When we submerged a pair of metal electrodes, in a parallel plate capacitor configuration, into a dilute solution of CdSe NQDs in hexane, and applied a DC voltage across the pair, thin films of CdSe NQDs were deposited on both the positive and the negative electrodes. Extensive characterizations including scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) and Raman studies revealed that the films on both the positive and the negative electrodes were identical in every respect, clearly indicating that: (1) a fraction (<1%) of the CdSe NQDs in free form in hexane solution are charged and, more importantly, (2) there are equal numbers of positive and negative CdSe NQDs in the hexane solution. Experiments also show that the number of deposited dots is at least an order of magnitude higher than the number of initially charged dots, indicating regeneration. We used simple thermodynamics to explain such amphoteric nature and the charging/regeneration of the CdSe NQDs.

  7. Submonolayer Quantum Dot Infrared Photodetector

    Science.gov (United States)

    Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

    2010-01-01

    A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

  8. Curcumin Quantum Dots Mediated Degradation of Bacterial Biofilms

    Directory of Open Access Journals (Sweden)

    Ashish K. Singh

    2017-08-01

    Full Text Available Bacterial biofilm has been reported to be associated with more than 80% of bacterial infections. Curcumin, a hydrophobic polyphenol compound, has anti-quorum sensing activity apart from having antimicrobial action. However, its use is limited by its poor aqueous solubility and rapid degradation. In this study, we attempted to prepare quantum dots of the drug curcumin in order to achieve enhanced solubility and stability and investigated for its antimicrobial and antibiofilm activity. We utilized a newer two-step bottom up wet milling approach to prepare Curcumin Quantum Dots (CurQDs using acetone as a primary solvent. Minimum inhibitory concentration against select Gram-positive and Gram-negative bacteria was performed. The antibiofilm assay was performed at first using 96-well tissue culture plate and subsequently validated by Confocal Laser Scanning Microscopy. Further, biofilm matrix protein was isolated using formaldehyde sludge and TCA/Acetone precipitation method. Protein extracted was incubated with varying concentration of CurQDs for 4 h and was subjected to SDS–PAGE. Molecular docking study was performed to observe interaction between curcumin and phenol soluble modulins as well as curli proteins. The biophysical evidences obtained from TEM, SEM, UV-VIS, fluorescence, Raman spectroscopy, and zeta potential analysis confirmed the formation of curcumin quantum dots with increased stability and solubility. The MICs of curcumin quantum dots, as observed against both select gram positive and negative bacterial isolates, was observed to be significantly lower than native curcumin particles. On TCP assay, Curcumin observed to be having antibiofilm as well as biofilm degrading activity. Results of SDS–PAGE and molecular docking have shown interaction between biofilm matrix proteins and curcumin. The results indicate that aqueous solubility and stability of Curcumin can be achieved by preparing its quantum dots. The study also demonstrates

  9. Inorganic passivation and doping control in colloidal quantum dot photovoltaics

    KAUST Repository

    Hoogland, Sjoerd H.

    2012-01-01

    We discuss strategies to reduce midgap trap state densities in colloidal quantum dot films and requirements to control doping type and magnitude. We demonstrate that these improvements result in colloidal quantum dot solar cells with certified 7.0% efficiency.

  10. Quantum dots in photonic crystals for integrated quantum photonics

    Science.gov (United States)

    Kim, Je-Hyung; Richardson, Christopher J. K.; Leavitt, Richard P.; Waks, Edo

    2017-08-01

    Integrated quantum photonic technologies hold a great promise for application in quantum information processing. A major challenge is to integrate multiple single photon sources on a chip. Quantum dots are bright sources of high purity single photons, and photonic crystals can provide efficient photonic platforms for generating and manipulating single photons from integrated quantum dots. However, integrating multiple quantum dots with photonic crystal devices still remains as a challenging task due to the spectral randomness of the emitters. Here, we present the integration of multiple quantum dots with individual photonic crystal cavities and report quantum interference from chip-integrated multiple quantum dots. To solve the problem of spectral randomness, we introduce local engineering techniques for tuning multiple quantum dots and cavities. From integrated quantum dot devices we observe indistinguishable nature of single photons from individual quantum dots on the same chip. Therefore, our approach paves the way for large-scale quantum photonics with integrated quantum emitters.

  11. Surface treatment of nanocrystal quantum dots after film deposition

    Science.gov (United States)

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  12. Room-Temperature Dephasing in InAs Quantum Dots

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Mørk, Jesper

    2000-01-01

    The room temperature dephasing in InAs/InGaAs/GaAs self-assembled quantum dots, embedded in a waveguide for laser applications, is measured using two independent methods: spectral hole burning and four-wave mixing. Without the application of bias current for electrical carrier injection......, a dephasing time of ~260 fs, weakly dependent on the optical excitation density, is found and attributed to phonon interaction. The application of bias current, leading to population inversion in the dot ground state and optical gain, strongly decreases the dephasing time to less than 50 fs, likely due...

  13. Optical studies of intersublevel-transitions in self-organized InGaAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Weber, A.

    2005-01-01

    In this thesis intersublevel-transitions in self-organized InGaAs/GaAs quantum dots are studied with spectroscopic methods. The charge-dependent absorption behaviour of the nanostructures in the intermediate infrared is studied by a new combination of Fourier spectroscopy and calorimetric absorption spectroscopy. Optical absorption in the quantum dots leads to a sample heating by charge-carrier relaxations, whereby non-radiative intersublevel transitions in the quantum dots are directly determined. The effects observed thereby are explained by different charge-carrier occupation, Pauli blocking, and many-=particle effects in the quantum dots. Furthermore intermediate-infrared emission from quantum dots is spectroscopically studied both under optical and electrical excitation. Each according to the structure of the waveguides in the samples emission peaks are shown, the intensity of which grows either sublinearly with the excitation power and finally saturates or exhibits a significantly superlinear growth. Simulations of an intermediate-infrared quantum-dot laser, which regard also the simultaneous intermediate-infrared emission, show that the observed superlinear growth is to be explained by intersublevel emission in the laser mode. The principal feasibility of a bipolar two-colour laser, which emits in the near- and in the intermediate infrared, is shown by this

  14. Coherence and dephasing in self-assembled quantum dots

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Leosson, K.; Birkedal, Dan

    2003-01-01

    We measured dephasing times in InGaAl/As self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot...... coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneours broadening mechanism in the latter....

  15. Carbon quantum dots and a method of making the same

    Science.gov (United States)

    Zidan, Ragaiy; Teprovich, Joseph A.; Washington, Aaron L.

    2017-08-22

    The present invention is directed to a method of preparing a carbon quantum dot. The carbon quantum dot can be prepared from a carbon precursor, such as a fullerene, and a complex metal hydride. The present invention also discloses a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride and a polymer containing a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride.

  16. Bright infrared LEDs based on colloidal quantum-dots

    KAUST Repository

    Sun, Liangfeng

    2013-01-01

    Record-brightness infrared LEDs based on colloidal quantum-dots have been achieved through control of the spacing between adjacent quantum-dots. By tuning the size of quantum-dots, the emission wavelengths can be tuned between 900nm and 1650nm. © 2013 Materials Research Society.

  17. Imaging vasculature and lymphatic flow in mice using quantum dots

    DEFF Research Database (Denmark)

    Ballou, Byron; Ernst, Lauren A.; Andreko, Susan

    2009-01-01

    Quantum dots are ideal probes for fluorescent imaging of vascular and lymphatic tissues. On injection into appropriate sites, red- and near-infrared-emitting quantum dots provide excellent definition of vasculature, lymphoid organs, and lymph nodes draining both normal tissues and tumors. We detail...... methods for use with commercially available quantum dots and discuss common difficulties....

  18. Role of surface states and defects in the ultrafast nonlinear optical properties of CuS quantum dots

    Directory of Open Access Journals (Sweden)

    K. A. Ann Mary

    2014-07-01

    Full Text Available We report facile preparation of water dispersible CuS quantum dots (2–4 nm and nanoparticles (5–11 nm through a nontoxic, green, one-pot synthesis method. Optical and microstructural studies indicate the presence of surface states and defects (dislocations, stacking faults, and twins in the quantum dots. The smaller crystallite size and quantum dot formation have significant effects on the high energy excitonic and low energy plasmonic absorption bands. Effective two-photon absorption coefficients measured using 100 fs laser pulses employing open-aperture Z-scan in the plasmonic region of 800 nm reveal that CuS quantum dots are better ultrafast optical limiters compared to CuS nanoparticles.

  19. Some aspects of quantum dot toxicity.

    Science.gov (United States)

    Bottrill, Melanie; Green, Mark

    2011-07-07

    Quantum dot toxicity has become a hot topic in recent years due to the emergence of semiconductor nanoparticles as highly efficient biological imaging agents. The use of quantum dots in biology is arguably the most successful application of pure nanotechnology in recent times, although unfortunately, the most useful semiconductor particles contain elements that are often thought to be detrimental to health and the environment. In this article, we explore some key reports on this issue. This journal is © The Royal Society of Chemistry 2011

  20. Cadmium telluride quantum dots advances and applications

    CERN Document Server

    Donegan, John

    2013-01-01

    Optical Properties of Bulk and Nanocrystalline Cadmium Telluride, Núñez Fernández and M.I. VasilevskiyAqueous Synthesis of Colloidal CdTe Nanocrystals, V. Lesnyak, N. Gaponik, and A. EychmüllerAssemblies of Thiol-Capped CdTe Nanocrystals, N. GaponikFörster Resonant Energy Transfer in CdTe Nanocrystal Quantum Dot Structures, M. Lunz and A.L. BradleyEmission of CdTe Nanocrystals Coupled to Microcavities, Y.P. Rakovich and J.F. DoneganBiological Applications of Cadmium Telluride Semiconductor Quantum Dots, A. Le Cign

  1. Spin-based all-optical quantum computation with quantum dots: Understanding and suppressing decoherence

    International Nuclear Information System (INIS)

    Calarco, T.; Datta, A.; Fedichev, P.; Zoller, P.; Pazy, E.

    2003-01-01

    We present an all-optical implementation of quantum computation using semiconductor quantum dots. Quantum memory is represented by the spin of an excess electron stored in each dot. Two-qubit gates are realized by switching on trion-trion interactions between different dots. State selectivity is achieved via conditional laser excitation exploiting Pauli exclusion principle. Read out is performed via a quantum-jump technique. We analyze the effect on our scheme's performance of the main imperfections present in real quantum dots: exciton decay, hole mixing, and phonon decoherence. We introduce an adiabatic gate procedure that allows one to circumvent these effects and evaluate quantitatively its fidelity

  2. Dephasing times in quantum dots due to elastic LO phonon-carrier collisions

    DEFF Research Database (Denmark)

    Uskov, A. V.; Jauho, Antti-Pekka; Tromborg, Bjarne

    2000-01-01

    Interpretation of experiments on quantum dot (QD) lasers presents a challenge: the phonon bottleneck, which should strongly suppress relaxation and dephasing of the discrete energy states, often seems to be inoperative. We suggest and develop a theory for an intrinsic mechanism for dephasing in Q......: second-order elastic interaction between quantum dot charge carriers and LO phonons. The calculated dephasing times are of the order of 200 fs at room temperature, consistent with experiments. The phonon bottleneck thus does not prevent significant room temperature dephasing....

  3. Increased fluorescence of PbS quantum dots in photonic crystals by excitation enhancement

    Science.gov (United States)

    Barth, Carlo; Roder, Sebastian; Brodoceanu, Daniel; Kraus, Tobias; Hammerschmidt, Martin; Burger, Sven; Becker, Christiane

    2017-07-01

    We report on the enhanced fluorescence of lead sulfide quantum dots interacting with leaky modes of slab-type silicon photonic crystals. The photonic crystal slabs were fabricated, supporting leaky modes in the near infrared wavelength range. Lead sulfite quantum dots which are resonant in the same spectral range were prepared in a thin layer above the slab. We selectively excited the leaky modes by tuning the wavelength and angle of incidence of the laser source and measured distinct resonances of enhanced fluorescence. By an appropriate experiment design, we ruled out directional light extraction effects and determined the impact of enhanced excitation. Three-dimensional numerical simulations consistently explain the experimental findings by strong near-field enhancements in the vicinity of the photonic crystal surface. Our study provides a basis for systematic tailoring of photonic crystals used in biological applications such as biosensing and single molecule detection, as well as quantum dot solar cells and spectral conversion applications.

  4. Resonance effects in Raman scattering of quantum dots formed by the Langmuir-Blodgett method

    Energy Technology Data Exchange (ETDEWEB)

    Milekhin, A G; Sveshnikova, L L; Duda, T A [Institute of Semiconductor Physics, Lavrentjev av.13, 630090, Novosibirsk (Russian Federation); Surovtsev, N V; Adichtchev, S V [Institute of Automation and Electrometry, Koptyug av.1, 630090, Novosibirsk (Russian Federation); Azhniuk, Yu M [Institute of Electron Physics, Universytetska Str. 21, 88017, Uzhhorod (Ukraine); Himcinschi, C [Institut fuer Theoretische Physik, TU Bergakademie Freiberg, Leipziger Str. 23, 09596, Freiberg (Germany); Kehr, M; Zahn, D R T, E-mail: milekhin@thermo.isp.nsc.r [Semiconductor Physics, Chemnitz University of Technology, Chemnitz (Germany)

    2010-09-01

    The enhancement of Raman scattering by optical phonon modes in quantum dots was achieved in resonant and surface-enhanced Raman scattering experiments by approaching the laser energy to the energy of either the interband transitions or the localized surface plasmons in silver nanoclusters deposited onto the nanostructures. Resonant Raman scattering by TO, LO, and SO phonons as well as their overtones was observed for PbS, ZnS, and ZnO quantum dots while enhancement for LO and SO modes in CdS quantum dots with a factor of about 700 was measured in surface enhanced Raman scattering experiments. Multiple phonon Raman scattering observed up to 5th and 7th order for CdS and ZnO, respectively, confirms the high crystalline quality of the grown QDs.

  5. Cooperative biexciton generation and destructive interference in coupled quantum dots using adiabatic rapid passage

    NARCIS (Netherlands)

    Renaud, N.; Grozema, F.C.

    2014-01-01

    We report numerical simulations of biexciton generation in coupled quantum dots (CQDs) placed in a static electric field and excited by a chirped laser pulse. Our simulations explicitly account for exciton-phonon interactions at finite temperature using a non-Markovian quantum jump approach to solve

  6. Delay signatures in the chaotic intensity output of a quantum dot ...

    Indian Academy of Sciences (India)

    Abstract. Delay identification from the chaotic intensity output of a quantum dot laser with opti- cal feedback is done using numerical and information theoretic techniques. Four quantifiers, namely autocorrelation function, delayed mutual information, permutation entropy and permutation statis- tical complexity, are employed ...

  7. Delay signatures in the chaotic intensity output of a quantum dot ...

    Indian Academy of Sciences (India)

    Delay identification from the chaotic intensity output of a quantum dot laser with optical feedback is done using numerical and information theoretic techniques. Four quantifiers, namely autocorrelation function, delayed mutual information, permutation entropy and permutation statistical complexity, are employed in delay ...

  8. Photo-stability of CsPbBr3 perovskite quantum dots for optoelectronic application

    NARCIS (Netherlands)

    Chen, Junsheng; Liu, Dongzhou; Al-Marri, Mohammed J.; Nuuttila, Lauri; Lehtivuori, Heli; Zheng, Kaibo

    Due to their superior photoluminescence (PL) quantum yield (QY) and tunable optical band gap, all-inorganic CsPbBr3 perovskite quantum dots (QDs) have attracted intensive attention for the application in solar cells, light emitting diodes (LED), photodetectors and laser devices. In this scenario,

  9. System and method for making quantum dots

    KAUST Repository

    Bakr, Osman M.

    2015-05-28

    Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

  10. New small quantum dots for neuroscience

    Science.gov (United States)

    Selvin, Paul

    2014-03-01

    In "New Small Quantum Dots for Neuroscience," Paul Selvin (University of Illinois, Urbana-Champaign) notes how the details of synapsis activity in the brain involves chemical receptors that facilitate the creation of the electrical connection between two nerves. In order to understand the details of this neuroscience phenomenon you need to be able to "see" what is happening at the scale of these receptors, which is around 10 nanometers. This is smaller than the diffraction limit of normal microscopy and it takes place on a 3 dimensional structure. Selvin describes the development of small quantum dots (on the order of 6-9 microns) that are surface-sensitized to interact with the receptors. This allows the application of photo-activated localized microscopy (PALM), a superresolution microscopy that can be scanned through focus to develop a 3D map on a scale that is the same size as the emitter, which in this case are the small quantum dots. The quantum dots are stable in time and provide access to the receptors which allows the imaging of the interactions taking place at the synoptic level.

  11. Quantum Dot Detectors with Plasmonic Structures

    Science.gov (United States)

    2015-05-15

    high operating temperature quantum dots in a well photodetectors,” Appl. Phys. Lett. 97(6), 061105 (2010). 18. J. D. Jackson, Classical ... Electrodynamics (Wiley, New York, 3rd Edition, 1999). Approved for Public Release; Distribution is Unlimited. 10 19. J. O. Kim, S. Sengupta, A. V. Barve, Y. D

  12. Photoluminescence of hybrid quantum dot systems

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2015-01-01

    Roč. 7, č. 4 (2015), 347-349 ISSN 2164-6627 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * energy transfer * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. Decoherence in Nearly-Isolated Quantum Dots

    DEFF Research Database (Denmark)

    Folk, J.; M. Marcus, C.; Harris jr, J.

    2000-01-01

    Decoherence in nearly-isolated GaAs quantum dots is investigated using the change in average Coulomb blockade peak height upon breaking time-reversal symmetry. The normalized change in average peak height approaches the predicted universal value of 1/4 at temperatures well below the single...

  14. Many electron effects in semiconductor quantum dots

    Indian Academy of Sciences (India)

    Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, they are much larger (1 100 nm) than real atoms. One can study a variety of manyelectron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the ...

  15. Optical anisotropy in vertically coupled quantum dots

    DEFF Research Database (Denmark)

    Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan

    1999-01-01

    We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....

  16. Electron Spins in Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Hanson, R.

    2005-01-01

    This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic

  17. Quantum Dots in Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Sollner, Immo Nathanael

    This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission into the...... quantum-dot-waveguide coupling. Such a structure is ideally suited for a number of applications in quantum information processing and among others we propose an on-chip spin-photon interface, a single photon transistor, and a deterministic cNOT gate.......This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission...... into the mode exceeding 98% for emitters spectrally close to the band-edge of the waveguide mode. In addition we illustrate the broadband nature of the underlying eects, by obtaining coupling eciencies above 90% for quantum dots detuned from the band edge by as far as 20nm. These values are in good agreement...

  18. Quantum Dots in Vertical Nanowire Devices

    NARCIS (Netherlands)

    Van Weert, M.

    2010-01-01

    The research described in this thesis is aimed at constructing a quantum interface between a single electron spin and a photon, using a nanowire quantum dot. Such a quantum interface enables information transfer from a local electron spin to the polarization of a photon for long distance readout.

  19. Competing interactions in semiconductor quantum dots

    NARCIS (Netherlands)

    van den Berg, R.; Brandino, G.P.; El Araby, O.; Konik, R.M.; Gritsev, V.; Caux, J.S.

    2014-01-01

    We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free-induction decay and spin-echo simulations

  20. Magnetic quantum dots for multimodal imaging

    NARCIS (Netherlands)

    Koole, Rolf; Mulder, Willem J. M.; van Schooneveld, Matti M.; Strijkers, Gustav J.; Meijerink, Andries; Nicolay, Klaas

    2009-01-01

    Multimodal contrast agents based on highly luminescent quantum dots (QDs) combined with magnetic nanoparticles (MNPs) or ions form an exciting class of new materials for bioimaging. With two functionalities integrated in a single nanoparticle, a sensitive contrast agent for two very powerful and

  1. Effect of temperature on quantum dots

    Indian Academy of Sciences (India)

    MAHDI AHMADI BORJI

    2017-07-12

    Jul 12, 2017 ... Abstract. In this paper, the strain, band-edge, and energy levels of pyramidal InxGa1−xAs/GaAs quantum dots are investigated by 1-band effective mass approach. It is shown that while temperature has no remarkable effect on the strain tensor, the band gap lowers and the radiation wavelength elongates ...

  2. Resonance fluorescence and electron spin in semiconductor quantum dots

    International Nuclear Information System (INIS)

    Zhao, Yong

    2009-01-01

    The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)

  3. Resonance fluorescence and electron spin in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yong

    2009-11-18

    The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)

  4. The electronic properties of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Barker, J.A.

    2000-10-01

    This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state

  5. Enhanced photoluminescence of corrugated Al2O3 film assisted by colloidal CdSe quantum dots.

    Science.gov (United States)

    Bai, Zhongchen; Hao, Licai; Zhang, Zhengping; Huang, Zhaoling; Qin, Shuijie

    2017-05-19

    We present the enhanced photoluminescence (PL) of a corrugated Al 2 O 3 film enabled by colloidal CdSe quantum dots. The colloidal CdSe quantum dots are fabricated directly on a corrugated Al 2 O 3 substrate using an electrochemical deposition (ECD) method in a microfluidic system. The photoluminescence is excited by using a 150 nm diameter ultraviolet laser spot of a scanning near-field optical microscope. Owing to the electron transfer from the conduction band of the CdSe quantum dots to that of Al 2 O 3 , the enhanced photoluminescence effect is observed, which results from the increase in the recombination rate of electrons and holes on the Al 2 O 3 surface and the reduction in the fluorescence of the CdSe quantum dots. A periodically-fluctuating fluorescent spectrum was exhibited because of the periodical wire-like corrugated Al 2 O 3 surface serving as an optical grating. The spectral topographic map around the fluorescence peak from the Al 2 O 3 areas covered with CdSe quantum dots was unique and attributed to the uniform deposition of CdSe QDs on the corrugated Al 2 O 3 surface. We believe that the microfluidic ECD system and the surface enhanced fluorescence method described in this paper have potential applications in forming uniform optoelectronic films of colloidal quantum dots with controllable QD spacing and in boosting the fluorescent efficiency of weak PL devices.

  6. From quantum dots to quantum circuits

    International Nuclear Information System (INIS)

    Ensslin, K.

    2008-01-01

    Full text: Quantum dots, or artificial atoms, confine charge carriers in three-dimensional islands in a semiconductor environment. Detailed understanding and exquisite control of the charge and spin state of the electrically tunable charge occupancy have been demonstrated over the years. Quantum dots with best quality for transport experiments are usually realized in n-type AlGaAs/GaAs heterostructures. Novel material systems, such as graphene, nanowires and p-type heterostructures offer unexplored parameter regimes in view of spin-orbit interactions, carrier-carrier interactions and hyperfine coupling between electron and nuclear spins, which might be relevant for future spin qubits realized in quantum dots. With more sophisticated nanotechnology it has become possible to fabricate coupled quantum systems where classical and quantum mechanical coupling and back action is experimentally investigated. A narrow constriction, or quantum point contact, in vicinity to a quantum dot has been shown to serve as a minimally invasive sensor of the charge state of the dot. If charge transport through the quantum dot is slow enough (kHz), the charge sensor allows the detection of time-resolved transport through quantum-confined structures. This has allowed us to measure extremely small currents not detectable with conventional electronics. In addition the full statistics of current fluctuations becomes experimentally accessible. This way correlations between electrons which influence the current flow can be analyzed by measuring the noise and higher moments of the distribution of current fluctuations. Mesoscopic conductors driven out of equilibrium can emit photons which may be detected by another nearby quantum system with suitably tuned energy levels. This way an on-chip microwave single photon detector has been realized. In a ring geometry containing a tunable double quantum dot it has been possible to measure the self-interference of individual electrons as they traverse

  7. Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field

    International Nuclear Information System (INIS)

    Duque, C.A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Soekmen, I.

    2010-01-01

    Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga 1-x Al x As QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.

  8. Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field

    Science.gov (United States)

    Duque, C. A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Sökmen, I.

    2010-10-01

    Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga 1- xAl xAs QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.

  9. Facile labeling of lipoglycans with quantum dots

    International Nuclear Information System (INIS)

    Morales Betanzos, Carlos; Gonzalez-Moa, Maria; Johnston, Stephen Albert; Svarovsky, Sergei A.

    2009-01-01

    Bacterial endotoxins or lipopolysaccharides (LPS) are among the most potent activators of the innate immune system, yet mechanisms of their action and in particular the role of glycans remain elusive. Efficient non-invasive labeling strategies are necessary for studying interactions of LPS glycans with biological systems. Here we report a new method for labeling LPS and other lipoglycans with luminescent quantum dots. The labeling is achieved by partitioning of hydrophobic quantum dots into the core of various LPS aggregates without disturbing the native LPS structure. The biofunctionality of the LPS-Qdot conjugates is demonstrated by the labeling of mouse monocytes. This simple method should find broad applicability in studies concerned with visualization of LPS biodistribution and identification of LPS binding agents.

  10. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon

    2015-11-18

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  11. Quantum Dot Molecular Beacons for DNA Detection

    Science.gov (United States)

    Cady, Nathaniel C.

    Molecular beacons have become an important fluorescent probe for sequence-specific DNA detection. To improve the sensitivity and robustness of molecular beacon assays, fluorescent semiconductor quantum dots (QDs) are now being used as the fluorescent moiety for molecular beacon synthesis. Multiple linkage strategies can be used for attaching molecular beacon DNA to QDs, and multiple quenchers, including gold particles, can be used for fluorescence quenching. Covalent attachment of QDs to DNA can be achieved through amide linkage, and affinity-based attachment can be achieved with streptavidin-biotin linkage. We have shown that these linkage strategies can be used to successfully create quantum dot molecular beacons that can be used in DNA detection assays with high specificity.

  12. Strain-tunable quantum dot devices

    International Nuclear Information System (INIS)

    Rastelli, A.; Trotta, R.; Zallo, E.; Atkinson, P.; Magerl, E.; Ding, F.; Plumhof, J.D.; Kumar, S.; Doerr, K.; Schmidt, O.G.

    2011-01-01

    We introduce a new class of quantum dot-based devices, in which the semiconductor structures are integrated on top of piezoelectric actuators. This combination allows on one hand to study in detail the effects produced by variable strains (up to about 0.2%) on the excitonic emission of single quantum dots and on the other to manipulate their electronic- and optical properties to achieve specific requirements. In fact, by combining strain with electric fields we are able to obtain (i) independent control of emission energy and charge-state of a QD, (II) wavelength-tunable single-QD light-emitting diodes and (III) frequency-stabilized sources of single photons at predefined wavelengths. Possible future extensions and applications of this technology will be discussed.

  13. Magnetic control of dipolaritons in quantum dots

    International Nuclear Information System (INIS)

    Rojas-Arias, J S; Vinck-Posada, H; Rodríguez, B A

    2016-01-01

    Dipolaritons are quasiparticles that arise in coupled quantum wells embedded in a microcavity, they are a superposition of a photon, a direct exciton and an indirect exciton. We propose the existence of dipolaritons in a system of two coupled quantum dots inside a microcavity in direct analogy with the quantum well case and find that, despite some similarities, dipolaritons in quantum dots have different properties and can lead to true dark polariton states. We use a finite system theory to study the effects of the magnetic field on the system, including the emission, and find that it can be used as a control parameter of the properties of excitons and dipolaritons, and the overall magnetic behaviour of the structure. (paper)

  14. Single Molecule Applications of Quantum Dots

    DEFF Research Database (Denmark)

    Rasmussen, Thomas Elmelund; Jauffred, Liselotte; Brewer, Jonathan R.

    2013-01-01

    Fluorescent nanocrystals composed of semiconductor materials were first introduced for biological applications in the late 1990s. The focus of this review is to give a brief survey of biological applications of quantum dots (QDs) at the single QD sensitivity level. These are described as follows:...... experiments held together with the prospects in localization microscopy and single molecule manipulation experiments gave QDs a promising future in single molecule research....

  15. Optical Fiber Sensing Using Quantum Dots

    Directory of Open Access Journals (Sweden)

    Faramarz Farahi

    2007-12-01

    Full Text Available Recent advances in the application of semiconductor nanocrystals, or quantumdots, as biochemical sensors are reviewed. Quantum dots have unique optical properties thatmake them promising alternatives to traditional dyes in many luminescence basedbioanalytical techniques. An overview of the more relevant progresses in the application ofquantum dots as biochemical probes is addressed. Special focus will be given toconfigurations where the sensing dots are incorporated in solid membranes and immobilizedin optical fibers or planar waveguide platforms.

  16. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. The Silicon:Colloidal Quantum Dot Heterojunction

    KAUST Repository

    Masala, Silvia

    2015-10-13

    A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Biosensing with Luminescent Semiconductor Quantum Dots

    OpenAIRE

    Sapsford, Kim E.; Pons, Thomas; Medintz, Igor L.; Mattoussi, Hedi

    2006-01-01

    Luminescent semiconductor nanocrystals or quantum dots (QDs) are a recently developed class of nanomaterial whose unique photophysical properties are helping to create a new generation of robust fluorescent biosensors. QD properties of interest for biosensing include high quantum yields, broad absorption spectra coupled to narrow size-tunable photoluminescent emissions and exceptional resistance to both photobleaching and chemical degradation. In this review, we examine the progress in adapti...

  19. Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    LI Zhi-min

    2017-08-01

    Full Text Available This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.

  20. Peptide-Decorated Tunable-Fluorescence Graphene Quantum Dots.

    Science.gov (United States)

    Sapkota, Bedanga; Benabbas, Abdelkrim; Lin, Hao-Yu Greg; Liang, Wentao; Champion, Paul; Wanunu, Meni

    2017-03-22

    We report here the synthesis of graphene quantum dots with tunable size, surface chemistry, and fluorescence properties. In the size regime 15-35 nm, these quantum dots maintain strong visible light fluorescence (mean quantum yield of 0.64) and a high two-photon absorption (TPA) cross section (6500 Göppert-Mayer units). Furthermore, through noncovalent tailoring of the chemistry of these quantum dots, we obtain water-stable quantum dots. For example, quantum dots with lysine groups bind strongly to DNA in solution and inhibit polymerase-based DNA strand synthesis. Finally, by virtue of their mesoscopic size, the quantum dots exhibit good cell permeability into living epithelial cells, but they do not enter the cell nucleus.

  1. Using of Quantum Dots in Biology and Medicine.

    Science.gov (United States)

    Pleskova, Svetlana; Mikheeva, Elza; Gornostaeva, Ekaterina

    2018-01-01

    Quantum dots are nanoparticles, which due to their unique physical and chemical (first of all optical) properties, are promising in biology and medicine. There are many ways for quantum dots synthesis, both in the form of nanoislands self-forming on the surfaces, which can be used as single-photon emitters in electronics for storing information, and in the form of colloidal quantum dots for diagnostic and therapeutic purposes in living systems. The paper describes the main methods of quantum dots synthesis and summarizes medical and biological ways of their use. The main emphasis is laid on the ways of quantum dots surface modification. Influence of the size and form of nanoparticles, charge on the surfaces of quantum dots, and cover type on the efficiency of internalization by cells and cell compartments is shown. The main mechanisms of penetration are considered.

  2. Theory of the Quantum Dot Hybrid Qubit

    Science.gov (United States)

    Friesen, Mark

    2015-03-01

    The quantum dot hybrid qubit, formed from three electrons in two quantum dots, combines the desirable features of charge qubits (fast manipulation) and spin qubits (long coherence times). The hybridized spin and charge states yield a unique energy spectrum with several useful properties, including two different operating regimes that are relatively immune to charge noise due to the presence of optimal working points or ``sweet spots.'' In this talk, I will describe dc and ac-driven gate operations of the quantum dot hybrid qubit. I will analyze improvements in the dephasing that are enabled by the sweet spots, and I will discuss the outlook for quantum hybrid qubits in terms of scalability. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), the USDOD, and the Intelligence Community Postdoctoral Research Fellowship Program. The views and conclusions contained in this presentation are those of the authors and should not be interpreted as representing the official policies or endorsements, either expressed or implied, of the US government.

  3. Impact of nanomechanical resonances on lasing from electrically pumped quantum dot micropillars

    Energy Technology Data Exchange (ETDEWEB)

    Czerniuk, T., E-mail: Thomas.Czerniuk@tu-dortmund.de; Tepper, J. [Experimentelle Physik 2, TU Dortmund University, 44227 Dortmund (Germany); Akimov, A. V. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Unsleber, S.; Schneider, C.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Center for Complex Material Systems, University of Würzburg, Am Hubland, 97074 Würzburg (Germany); Höfling, S. [School of Physics and Astronomy, University of St Andrews, KY16 0SS St Andrews (United Kingdom); Yakovlev, D. R.; Bayer, M. [Experimentelle Physik 2, TU Dortmund University, 44227 Dortmund (Germany); Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

    2015-01-26

    We use a picosecond acoustics technique to modulate the laser output of electrically pumped GaAs/AlAs micropillar lasers with InGaAs quantum dots. The modulation of the emission wavelength takes place on the frequencies of the nanomechanical extensional and breathing (radial) modes of the micropillars. The amplitude of the modulation for various nanomechanical modes is different for every micropillar which is explained by a various elastic contact between the micropillar walls and polymer environment.

  4. Ultrafast light matter interaction in CdSe/ZnS core-shell quantum dots

    Science.gov (United States)

    Yadav, Rajesh Kumar; Sharma, Rituraj; Mondal, Anirban; Adarsh, K. V.

    2018-04-01

    Core-shell quantum dot are imperative for carrier (electron and holes) confinement in core/shell, which provides a stage to explore the linear and nonlinear optical phenomena at the nanoscalelimit. Here we present a comprehensive study of ultrafast excitation dynamics and nonlinear optical absorption of CdSe/ZnS core shell quantum dot with the help of ultrafast spectroscopy. Pump-probe and time-resolved measurements revealed the drop of trapping at CdSe surface due to the presence of the ZnS shell, which makes more efficient photoluminescence. We have carried out femtosecond transient absorption studies of the CdSe/ZnS core-shell quantum dot by irradiation with 400 nm laser light, monitoring the transients in the visible region. The optical nonlinearity of the core-shell quantum dot studied by using the Z-scan technique with 120 fs pulses at the wavelengths of 800 nm. The value of two photon absorption coefficients (β) of core-shell QDs extracted as80cm/GW, and it shows excellent benchmark for the optical limiting onset of 2.5GW/cm2 with the low limiting differential transmittance of 0.10, that is an order of magnitude better than graphene based materials.

  5. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    Energy Technology Data Exchange (ETDEWEB)

    Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tagliaferri, M. L. V. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Universit di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Vinet, M. [CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France); Sanquer, M. [SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble (France); Ferguson, A. J. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)

    2016-05-16

    We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

  6. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  7. Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals

    International Nuclear Information System (INIS)

    See, Gloria G.; Xu, Lu; Nuzzo, Ralph G.; Sutanto, Erick; Alleyne, Andrew G.; Cunningham, Brian T.

    2015-01-01

    Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure

  8. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    International Nuclear Information System (INIS)

    Betz, A. C.; Broström, M.; Gonzalez-Zalba, M. F.; Tagliaferri, M. L. V.; Vinet, M.; Sanquer, M.; Ferguson, A. J.

    2016-01-01

    We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

  9. Correlation effects in side-coupled quantum dots

    International Nuclear Information System (INIS)

    Zitko, R; Bonca, J

    2007-01-01

    Using Wilson's numerical renormalization group (NRG) technique, we compute zero-bias conductance and various correlation functions of a double quantum dot (DQD) system. We present different regimes within a phase diagram of the DQD system. By introducing a negative Hubbard U on one of the quantum dots, we simulate the effect of electron-phonon coupling and explore the properties of the coexisting spin and charge Kondo state. In a triple quantum dot (TQD) system, a multi-stage Kondo effect appears where localized moments on quantum dots are screened successively at exponentially distinct Kondo temperatures

  10. Coherent transport through interacting quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Hiltscher, Bastian

    2012-10-05

    The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

  11. Coherent transport through interacting quantum dots

    International Nuclear Information System (INIS)

    Hiltscher, Bastian

    2012-01-01

    The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

  12. The inhibition of optical excitations and enhancement of Rabi flopping in hybrid quantum dot-metallic nanoparticle systems

    International Nuclear Information System (INIS)

    Sadeghi, S M

    2009-01-01

    We study the inhibition of optical excitation and enhancement of Rabi flopping and frequency in semiconductor quantum dots via plasmonic effects. This is done by demonstrating that the interaction of a quantum dot with a laser field in the vicinity of a metallic nanoparticle can be described in terms of optical Bloch equations with a plasmically normalized Rabi frequency. We show that in the weak-field regime plasmonic effects can suppress the interband transitions, inhibiting exciton generation. In the strong-field regime these effects delay the response of the quantum dot to the laser field and enhance Rabi flopping. We relate these to the conversion of Rabi frequency from a real quantity into a complex and strongly frequency-dependent quantity as plasmonic effects become significant. We show that, within the strong-field regime, in the wavelength range where real and imaginary parts of this frequency reach their maxima, a strongly frequency-dependent enhancement of carrier excitation can happen.

  13. Quantum Dot Spectrum Converters for Enhanced High Efficiency Photovoltaics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This research proposes to enhance solar cell efficiency, radiation resistance and affordability. The Quantum Dot Spectrum Converter (QDSC) disperses quantum dots...

  14. Studies on silicon quantum dots prepared at different working pressure

    Directory of Open Access Journals (Sweden)

    Faisal A. Al-Agel

    Full Text Available This research work describes the synthesis and characterization of Si quantum dots of thickness 20 nm prepared on glass/quartz substrate by Physical Vapour Condensation Technique at the working pressure of 5 and 10 Torr with fixed substrate temperature 77 K using liquid nitrogen. The synthesized quantum dots were studied by FESEM, HRTEM, X-ray diffraction, UV–visible spectroscopy, photoluminescence and FTIR spectroscopy. The X-ray diffraction pattern of synthesized quantum dots shows the amorphous nature. FESEM images of synthesized quantum dots suggest that the size of quantum dots varies from 4–6 nm which is further confirmed by HRTEM. On the basis of optical absorbance by UV–visible spectroscopy, a direct band gap has been detected. FTIR spectra suggest that the as-grown Si quantum dots are partially oxidized which is due exposure of samples to air after taking out the samples from the chamber. PL spectra show a broad peak at 444 nm, which may be attributed to the configuration of amorphous Si quantum dots. A slight shift in the peak position has been observed with increase in working pressure from 5 Torr to 10 Torr. The dc conductivity with temperature of Si quantum dots has also been studied from 303 to 454 K. It is evident that the dc conductivity (σdc enhances linearly with temperature, showing that conduction in Si quantum dots is due to an activated action which further verify the semiconductor deportment of these quantum dots. Keywords: Si quantum dots, Thin films, XRD, Optical properties, Electrical properties

  15. Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry

    Science.gov (United States)

    Lüker, S.; Kuhn, T.; Reiter, D. E.

    2017-12-01

    Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.

  16. Hybrid passivated colloidal quantum dot solids

    KAUST Repository

    Ip, Alex

    2012-07-29

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

  17. Graphene quantum dots with nitrogen-doped content dependence for highly efficient dual-modality photodynamic antimicrobial therapy and bioimaging.

    Science.gov (United States)

    Kuo, Wen-Shuo; Chen, Hua-Han; Chen, Shih-Yao; Chang, Chia-Yuan; Chen, Pei-Chi; Hou, Yung-I; Shao, Yu-Ting; Kao, Hui-Fang; Lilian Hsu, Chih-Li; Chen, Yi-Chun; Chen, Shean-Jen; Wu, Shang-Rung; Wang, Jiu-Yao

    2017-03-01

    Reactive oxygen species is the main contributor to photodynamic therapy. The results of this study show that a nitrogen-doped graphene quantum dot, serving as a photosensitizer, was capable of generating a higher amount of reactive oxygen species than a nitrogen-free graphene quantum dot in photodynamic therapy when photoexcited for only 3 min of 670 nm laser exposure (0.1 W cm -2 ), indicating highly improved antimicrobial effects. In addition, we found that higher nitrogen-bonding compositions of graphene quantum dots more efficiently performed photodynamic therapy actions than did the lower compositions that underwent identical treatments. Furthermore, the intrinsically emitted luminescence from nitrogen-doped graphene quantum dots and high photostability simultaneously enabled it to act as a promising contrast probe for tracking and localizing bacteria in biomedical imaging. Thus, the dual modality of nitrogen-doped graphene quantum dots presents possibilities for future clinical applications, and in particular multidrug resistant bacteria. Copyright © 2016 Elsevier Ltd. All rights reserved.

  18. Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot

    DEFF Research Database (Denmark)

    Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal

    2016-01-01

    We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offe...

  19. Fractional decay of quantum dots in photonic crystals

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst; Koenderink, Femius; Lodahl, Peter

    2008-01-01

    We define a practical measure for the degree of fractional decay and establish conditions for the effect to be observable for quantum dots in photonic crystals exhibiting absorptive losses.......We define a practical measure for the degree of fractional decay and establish conditions for the effect to be observable for quantum dots in photonic crystals exhibiting absorptive losses....

  20. Single-photon superradiance from a quantum dot

    DEFF Research Database (Denmark)

    Tighineanu, Petru; Daveau, Raphaël Sura; Lehmann, Tau Bernstorff

    2016-01-01

    We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron and t...

  1. Electronic properties of assemblies of zno quantum dots

    NARCIS (Netherlands)

    Roest, Aarnoud Laurens

    2003-01-01

    Electron transport in an assembly of ZnO quantum dots has been studied using an electrochemically gated transistor. The electron mobility shows a step-wise increase as a function of the electron occupation per quantum dot. When the occupation number is below two, transport occurs by tunnelling

  2. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    developed in the study of single quantum dots, characterized by sharp atomic-like transition lines revealing their zero-dimensional density of states. Substantial information about the fundamental properties of individual quantum dots, as well as their interactions with other dots and the host lattice, can...

  3. Stark effect and polarizability of graphene quantum dots

    DEFF Research Database (Denmark)

    Pedersen, Thomas Garm

    2017-01-01

    The properties of graphene quantum dots can be manipulated via lateral electric fields. Treating electrons in such structures as confined massless Dirac fermions, we derive an analytical expression for the quadratic Stark shift valid for arbitrary angular momentum and quantum dot size. Moreover, we...

  4. Electron transport and coherence in semiconductor quantum dots and rings

    NARCIS (Netherlands)

    Van der Wiel, W.G.

    2002-01-01

    A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that

  5. Quantum dots for multimodal molecular imaging of angiogenesis

    NARCIS (Netherlands)

    Mulder, Willem J. M.; Strijkers, Gustav J.; Nicolay, Klaas; Griffioen, Arjan W.

    2010-01-01

    Quantum dots exhibit unique optical properties for bioimaging purposes. We have previously developed quantum dots with a paramagnetic and functionalized coating and have shown their potential for molecular imaging purposes. In the current mini-review we summarize the synthesis procedure, the in

  6. Fabrication of a graphene quantum dot device

    Science.gov (United States)

    Lee, Jeong Il; Kim, Eunseong

    2014-03-01

    Graphene, which exhibits a massless Dirac-like spectrum for its electrons, has shown impressive properties for nano-electronics applications including a high mobility and a width dependent bandgap. We will report the preliminary report on the transport property of the suspended graphene nano-ribbon(GNR) quantum dot device down to dilution refrigerator temperature. This GNR QD device was fabricated to realize an ideal probe to investigate Kondo physics--a characteristic phenomenon in the physics of strongly correlated electrons. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  7. From structure to spectra. Tight-binding theory of InGaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Goldmann, Elias

    2014-07-23

    Self-assembled semiconductor quantum dots have raised considerable interest in the last decades due to a multitude of possible applications ranging from carrier storage to light emitters, lasers and future quantum communication devices. Quantum dots offer unique electronic and photonic properties due to the three-dimensional confinement of charge carriers and the coupling to a quasi-continuum of wetting layer and barrier states. In this work we investigate the electronic structure of In{sub x}Ga{sub 1-x}As quantum dots embedded in GaAs, considering realistic quantum dot geometries and Indium concentrations. We utilize a next-neighbour sp{sup 3}s{sup *} tight-binding model for the calculation of electronic single-particle energies and wave functions bound in the nanostructure and account for strain arising from lattice mismatch of the constituent materials atomistically. With the calculated single-particle wave functions we derive Coulomb matrix elements and include them into a configuration interaction treatment, yielding many-particle states and energies of the interacting many-carrier system. Also from the tight-binding single-particle wave functions we derive dipole transition strengths to obtain optical quantum dot emission and absorption spectra with Fermi's golden rule. Excitonic fine-structure splittings are obtained, which play an important role for future quantum cryptography and quantum communication devices for entanglement swapping or quantum repeating. For light emission suited for long-range quantum-crypted fiber communication InAs quantum dots are embedded in an In{sub x}Ga{sub 1-x}As strain-reducing layer, shifting the emission wavelength into telecom low-absorption windows. We investigate the influence of the strain-reducing layer Indium concentration on the excitonic finestructure splitting. The fine-structure splitting is found to saturate and, in some cases, even reduce with strain-reducing layer Indium concentration, a result being

  8. From structure to spectra. Tight-binding theory of InGaAs quantum dots

    International Nuclear Information System (INIS)

    Goldmann, Elias

    2014-01-01

    Self-assembled semiconductor quantum dots have raised considerable interest in the last decades due to a multitude of possible applications ranging from carrier storage to light emitters, lasers and future quantum communication devices. Quantum dots offer unique electronic and photonic properties due to the three-dimensional confinement of charge carriers and the coupling to a quasi-continuum of wetting layer and barrier states. In this work we investigate the electronic structure of In x Ga 1-x As quantum dots embedded in GaAs, considering realistic quantum dot geometries and Indium concentrations. We utilize a next-neighbour sp 3 s * tight-binding model for the calculation of electronic single-particle energies and wave functions bound in the nanostructure and account for strain arising from lattice mismatch of the constituent materials atomistically. With the calculated single-particle wave functions we derive Coulomb matrix elements and include them into a configuration interaction treatment, yielding many-particle states and energies of the interacting many-carrier system. Also from the tight-binding single-particle wave functions we derive dipole transition strengths to obtain optical quantum dot emission and absorption spectra with Fermi's golden rule. Excitonic fine-structure splittings are obtained, which play an important role for future quantum cryptography and quantum communication devices for entanglement swapping or quantum repeating. For light emission suited for long-range quantum-crypted fiber communication InAs quantum dots are embedded in an In x Ga 1-x As strain-reducing layer, shifting the emission wavelength into telecom low-absorption windows. We investigate the influence of the strain-reducing layer Indium concentration on the excitonic finestructure splitting. The fine-structure splitting is found to saturate and, in some cases, even reduce with strain-reducing layer Indium concentration, a result being counterintuitively. Our result

  9. Near-field strong coupling of single quantum dots.

    Science.gov (United States)

    Groß, Heiko; Hamm, Joachim M; Tufarelli, Tommaso; Hess, Ortwin; Hecht, Bert

    2018-03-01

    Strong coupling and the resultant mixing of light and matter states is an important asset for future quantum technologies. We demonstrate deterministic room temperature strong coupling of a mesoscopic colloidal quantum dot to a plasmonic nanoresonator at the apex of a scanning probe. Enormous Rabi splittings of up to 110 meV are accomplished by nanometer-precise positioning of the quantum dot with respect to the nanoresonator probe. We find that, in addition to a small mode volume of the nanoresonator, collective coherent coupling of quantum dot band-edge states and near-field proximity interaction are vital ingredients for the realization of near-field strong coupling of mesoscopic quantum dots. The broadband nature of the interaction paves the road toward ultrafast coherent manipulation of the coupled quantum dot-plasmon system under ambient conditions.

  10. Second-harmonic imaging of semiconductor quantum dots

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld

    2000-01-01

    Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...... observe that second-harmonic images of the quantum-dot surface structure show wavelength-dependent spatial variations. Imaging at different wavelength is used to demonstrate second-harmonic generation from the semiconductor quantum dots. (C) 2000 American Institute of Physics....

  11. Coherent Dynamics of Quantum Dots in Photonic-Crystal Cavities

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg

    In this thesis we have performed quantum-electrodynamics experiments on quantum dots embedded in photonic-crystal cavities. We perform a quantitative comparison of the decay dynamics and emission spectra of quantum dots embedded in a micropillar cavity and a photonic-crystal cavity. The light......-matter interaction in the micropiller caivty is so strong that we measure non-Markovian dynamics of the quantum dot, and we compare to the Jaynes-Cummings model with all parameters independently determined. We find an excellent agreement when comparing the dynamics, but the emission spectra show significant...... deviations. Similar measurements on a quantum dot in a photonic-crystal cavity sow a Rabi splitting on resonance, while time-resolved measurements prove that the system is in the weak coupling regime. Whle tuning the quantum dot through resonance of the high-Q mode we observe a strong and surprisingly...

  12. Interaction of porphyrins with CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei, E-mail: weichen@uta.edu [Department of Physics, University of Texas at Arlington, Box 19059 Arlington, TX 76019 (United States)

    2011-05-13

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  13. Solid-state cavity quantum electrodynamics using quantum dots

    International Nuclear Information System (INIS)

    Gerard, J.M.; Gayral, B.; Moreau, E.; Robert, I.; Abram, I.

    2001-01-01

    We review the recent development of solid-state cavity quantum electrodynamics using single self-assembled InAs quantum dots and three-dimensional semiconductor microcavities. We discuss first prospects for observing a strong coupling regime for single quantum dots. We then demonstrate that the strong Purcell effect observed for single quantum dots in the weak coupling regime allows us to prepare emitted photons in a given state (the same spatial mode, the same polarization). We present finally the first single-mode solid-state source of single photons, based on an isolated quantum dot in a pillar microcavity. This optoelectronic device, the first ever to rely on a cavity quantum electrodynamics effect, exploits both Coulomb interaction between trapped carriers in a single quantum dot and single mode photon tunneling in the microcavity. (author)

  14. 3D super-resolution imaging with blinking quantum dots

    Science.gov (United States)

    Wang, Yong; Fruhwirth, Gilbert; Cai, En; Ng, Tony; Selvin, Paul R.

    2013-01-01

    Quantum dots are promising candidates for single molecule imaging due to their exceptional photophysical properties, including their intense brightness and resistance to photobleaching. They are also notorious for their blinking. Here we report a novel way to take advantage of quantum dot blinking to develop an imaging technique in three-dimensions with nanometric resolution. We first applied this method to simulated images of quantum dots, and then to quantum dots immobilized on microspheres. We achieved imaging resolutions (FWHM) of 8–17 nm in the x-y plane and 58 nm (on coverslip) or 81 nm (deep in solution) in the z-direction, approximately 3–7 times better than what has been achieved previously with quantum dots. This approach was applied to resolve the 3D distribution of epidermal growth factor receptor (EGFR) molecules at, and inside of, the plasma membrane of resting basal breast cancer cells. PMID:24093439

  15. Interaction of porphyrins with CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

    2011-01-01

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  16. Ultrafast signal processing in quantum dot amplifiers through effective spectral holeburning

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper; Uskov, A. V.

    2002-01-01

    Significant progress has been obtained on quantum dot (QD) lasers, but the possible advantages of QD amplifiers are not yet clear. We show here that a relatively slow coupling between the optically active QD carrier states and the surrounding carrier reservoir can lead to efficient gain modulation......), and the wetting layer (WL), where current is injected. Time evolution is described by two coupled rate equations. Carrier capture from WL to dots is characterized by the capture time /spl tau//sub 0/....

  17. Observations of Rabi oscillations in a non-polar InGaN quantum dot

    International Nuclear Information System (INIS)

    Reid, Benjamin P. L.; Chan, Christopher C. S.; Taylor, Robert A.; Kocher, Claudius; Zhu, Tongtong; Oehler, Fabrice; Emery, Robert; Oliver, Rachel A.

    2014-01-01

    Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.

  18. Dependence of the modulation response of quantum dot based nanocavity devices on the number of emitters

    DEFF Research Database (Denmark)

    Lorke, Michael; Nielsen, Torben Roland; Mørk, Jesper

    2011-01-01

    A microscopic theory is used to study the dynamical properties of semiconductor quantum dot based nanocavity laser systems. The carrier kinetics and photon populations are determined using a fully quantum mechanical treatment of the light‐matter coupling. In this work, we investigate the dependency...... of the modulation response in such devices on the number of emitters coupled to the cavity mode. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)...

  19. Colloidal quantum dot light-emitting devices

    Directory of Open Access Journals (Sweden)

    Vanessa Wood

    2010-07-01

    Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

  20. Using quantum dot photoluminescence for load detection

    Directory of Open Access Journals (Sweden)

    M. Moebius

    2016-08-01

    Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  1. Colloidal Quantum Dot Photovoltaics: A Path Forward

    KAUST Repository

    Kramer, Illan J.

    2011-11-22

    Colloidal quantum dots (CQDs) offer a path toward high-efficiency photovoltaics based on low-cost materials and processes. Spectral tunability via the quantum size effect facilitates absorption of specific wavelengths from across the sun\\'s broad spectrum. CQD materials\\' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements represent important first steps toward commercially compelling performance. Here we review advances in device architecture and materials science. We diagnose the principal phenomenon-electronic states within the CQD film band gap that limit both current and voltage in devices-that must be cured for CQD PV devices to fulfill their promise. We close with a prescription, expressed as bounds on the density and energy of electronic states within the CQD film band gap, that should allow device efficiencies to rise to those required for the future of the solar energy field. © 2011 American Chemical Society.

  2. Pulse train amplification and regeneration based on semiconductor quantum dots waveguide

    DEFF Research Database (Denmark)

    Chen, Yaohui; Öhman, Filip; Mørk, Jesper

    2008-01-01

    We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides.......We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides....

  3. Dynamics of plasmonic field polarization induced by quantum coherence in quantum dot-metallic nanoshell structures.

    Science.gov (United States)

    Sadeghi, S M

    2014-09-01

    When a hybrid system consisting of a semiconductor quantum dot and a metallic nanoparticle interacts with a laser field, the plasmonic field of the metallic nanoparticle can be normalized by the quantum coherence generated in the quantum dot. In this Letter, we study the states of polarization of such a coherent-plasmonic field and demonstrate how these states can reveal unique aspects of the collective molecular properties of the hybrid system formed via coherent exciton-plasmon coupling. We show that transition between the molecular states of this system can lead to ultrafast polarization dynamics, including sudden reversal of the sense of variations of the plasmonic field and formation of circular and elliptical polarization.

  4. Dynamics of Energy Transfer in Quantum Dot Arrays

    Science.gov (United States)

    Al-Ahmadi, A. N.; Ulloa, S. E.

    2004-04-01

    Förster-type coupling is one of the most important mechanisms that influence the energy transport properties in a quantum dot array. We explore this mechanism by calculating the coupling strength V_F, and by studying the dynamics of the exciton state created in an array of quantum dots using the time evolution of the density matrix approach. We first estimate the coupling strength VF of Förster interaction based on microscopic descriptions of the exciton levels in the quantum dot. We study this parameter for different materials (CdS, CdSe,InP, and GaAs) as function of the dot size. The results show that the maximum value of VF depends on the specific sizes and that each material has optimal coupling for different pairs of quantum dot radii. Other key parameters that govern energy transport are determined for various materials and sizes of quantum dots. Second, we consider a model of coupled quantum dots with two exciton levels in each dot, one optically passive and another active. Analysis of the population of each level when the Förster channel is opened shows this is responsible for interesting physical behavior in different coupling regimes. Realistic parameters used to study the dynamics of the exciton state for dimer and trimer quantum dot clusters, allow us direct comparison with recent experiments by Klimov et al. Supported by US DOE, and Indiana 21^st Century Fund Research and Technology.

  5. Quantum dot nanoparticle conjugation, characterization, and applications in neuroscience

    Science.gov (United States)

    Pathak, Smita

    Quantum dot are semiconducting nanoparticles that have been used for decades in a variety of applications such as solar cells, LEDs and medical imaging. Their use in the last area, however, has been extremely limited despite their potential as revolutionary new biological labeling tools. Quantum dots are much brighter and more stable than conventional fluorophores, making them optimal for high resolution imaging and long term studies. Prior work in this area involves synthesizing and chemically conjugating quantum dots to molecules of interest in-house. However this method is both time consuming and prone to human error. Additionally, non-specific binding and nanoparticle aggregation currently prevent researchers from utilizing this system to its fullest capacity. Another critical issue that has not been addressed is determining the number of ligands bound to nanoparticles, which is crucial for proper interpretation of results. In this work, methods to label fixed cells using two types of chemically modified quantum dots are studied. Reproducible non-specific artifact labeling is consistently demonstrated if antibody-quantum dot conditions are less than optimal. In order to explain this, antibodies bound to quantum dots were characterized and quantified. While other groups have qualitatively characterized antibody functionalized quantum dots using TEM, AFM, UV spectroscopy and gel electrophoresis, and in some cases have reported calculated estimates of the putative number of total antibodies bound to quantum dots, no quantitative experimental results had been reported prior to this work. The chemical functionalization and characterization of quantum dot nanocrystals achieved in this work elucidates binding mechanisms of ligands to nanoparticles and allows researchers to not only translate our tools to studies in their own areas of interest but also derive quantitative results from these studies. This research brings ease of use and increased reliability to

  6. Entangled exciton states in quantum dot molecules

    Science.gov (United States)

    Bayer, Manfred

    2002-03-01

    Currently there is strong interest in quantum information processing(See, for example, The Physics of Quantum Information, eds. D. Bouwmeester, A. Ekert and A. Zeilinger (Springer, Berlin, 2000).) in a solid state environment. Many approaches mimic atomic physics concepts in which semiconductor quantum dots are implemented as artificial atoms. An essential building block of a quantum processor is a gate which entangles the states of two quantum bits. Recently a pair of vertically aligned quantum dots has been suggested as optically driven quantum gate(P. Hawrylak, S. Fafard, and Z. R. Wasilewski, Cond. Matter News 7, 16 (1999).)(M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z.R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).): The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin", therefore we call them "isospin". Quantum mechanical tunneling between the dots rotates the isospin and leads to superposition of these states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. Here we present spectrocsopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of this proposal. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states: Due to the coupling between the dots the exciton states show a splitting that increases with decreasing barrier width. For barrier widths below 5 nm it exceeds the thermal energy at room temperature. For a given barrier width, we find only small variations of the tunneling induced splitting demonstrating a good homogeneity within a molecule ensemble. The entanglement may be controlled by application of electromagnetic field. For

  7. Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots

    International Nuclear Information System (INIS)

    Norris, T B; Kim, K; Urayama, J; Wu, Z K; Singh, J; Bhattacharya, P K

    2005-01-01

    We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the dependence of quantum dot carrier dynamics on temperature. At low temperatures and densities, the rates for relaxation between the quantum dot confined states and for capture from the barrier region into the various dot levels could be directly determined. For electron-hole pairs generated directly in the quantum dot excited state, relaxation is dominated by electron-hole scattering, and occurs on a 5 ps time scale. Capture times from the barrier into the quantum dot are of the order of 2 ps (into the excited state) and 10 ps (into the ground state). The phonon bottleneck was clearly observed in low-density capture experiments, and the conditions for its observation (namely, the suppression of electron-hole scattering for nongeminately captured electrons) were determined. As temperature increases beyond about 100 K, the dynamics become dominated by the re-emission of carriers from the lower dot levels, due to the large density of states in the wetting layer and barrier region. Measurements of the gain dynamics show fast (130 fs) gain recovery due to intradot carrier-carrier scattering, and picosecond-scale capture. Direct measurement of the transparency density versus temperature shows the dramatic effect of carrier re-emission for the quantum dots on thermally activated scattering. The carrier dynamics at elevated temperature are thus strongly dominated by the high density of the high energy continuum states relative to the dot confined levels. Deleterious hot carrier effects can be suppressed in quantum dot lasers by resonant tunnelling injection

  8. Phonon-assisted decoherence and tunneling in quantum dot molecules

    DEFF Research Database (Denmark)

    Grodecka-Grad, Anna; Foerstner, Jens

    2011-01-01

    We study the influence of the phonon environment on the electron dynamics in a doped quantum dot molecule. A non-perturbative quantum kinetic theory based on correlation expansion is used in order to describe both diagonal and off-diagonal electron-phonon couplings representing real and virtual...... processes with relevant acoustic phonons. We show that the relaxation is dominated by phonon-assisted electron tunneling between constituent quantum dots and occurs on a picosecond time scale. The dependence of the time evolution of the quantum dot occupation probabilities on the energy mismatch between...

  9. Silicon Quantum Dots with Counted Antimony Donor Implants

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Meenakshi [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Pacheco, Jose L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Perry, Daniel Lee [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Garratt, E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Ten Eyck, Gregory A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Wendt, Joel R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Manginell, Ronald P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Luhman, Dwight [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Bielejec, Edward S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Lilly, Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

    2015-10-01

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

  10. Imaging GABAc Receptors with Ligand-Conjugated Quantum Dots

    Directory of Open Access Journals (Sweden)

    Ian D. Tomlinson

    2007-01-01

    Full Text Available We report a methodology for labeling the GABAc receptor on the surface membrane of intact cells. This work builds upon our earlier work with serotonin-conjugated quantum dots and our studies with PEGylated quantum dots to reduce nonspecific binding. In the current approach, a PEGylated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphilic polymer derivative of a modified polyacrylamide. These conjugates were used to image GABAC receptors heterologously expressed in Xenopus laevis oocytes.

  11. Study of a Quantum Dot in an Excited State

    Science.gov (United States)

    Slamet, Marlina; Sahni, Viraht

    We have studied the first excited singlet state of a quantum dot via quantal density functional theory (QDFT). The quantum dot is represented by a 2D Hooke's atom in an external magnetostatic field. The QDFT mapping is from an excited singlet state of this interacting system to one of noninteracting fermions in a singlet ground state. The results of the study will be compared to (a) the corresponding mapping from a ground state of the quantum dot and (b) to the similar mapping from an excited singlet state of the 3D Hooke's atom.

  12. Quantum Dots Microstructured Optical Fiber for X-Ray Detection

    Science.gov (United States)

    DeHaven, Stan; Williams, Phillip; Burke, Eric

    2015-01-01

    Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.

  13. Electrostatically defined silicon quantum dots with counted antimony donor implants

    Energy Technology Data Exchange (ETDEWEB)

    Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175 (United States); Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2016-02-08

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

  14. Quantum-dot based photonic quantum networks

    Science.gov (United States)

    Lodahl, Peter

    2018-01-01

    Quantum dots (QDs) embedded in photonic nanostructures have in recent years proven to be a very powerful solid-state platform for quantum optics experiments. The combination of near-unity radiative coupling of a single QD to a photonic mode and the ability to eliminate decoherence processes imply that an unprecedent light-matter interface can be obtained. As a result, high-cooperativity photon-emitter quantum interfaces can be constructed opening a path-way to deterministic photonic quantum gates for quantum-information processing applications. In the present manuscript, I review current state-of-the-art on QD devices and their applications for quantum technology. The overarching long-term goal of the research field is to construct photonic quantum networks where remote entanglement can be distributed over long distances by photons.

  15. Tellurium quantum dots: Preparation and optical properties

    Science.gov (United States)

    Lu, Chaoyu; Li, Xueming; Tang, Libin; Lai, Sin Ki; Rogée, Lukas; Teng, Kar Seng; Qian, Fuli; Zhou, Liangliang; Lau, Shu Ping

    2017-08-01

    Herein, we report an effective and simple method for producing Tellurium Quantum dots (TeQDs), zero-dimensional nanomaterials with great prospects for biomedical applications. Their preparation is based on the ultrasonic exfoliation of Te powder dispersed in 1-methyl-2-pyrrolidone. Sonication causes the van der Waals forces between the structural hexagons of Te to break so that the relatively coarse powder breaks down into nanoscale particles. The TeQDs have an average size of about 4 nm. UV-Vis absorption spectra of the TeQDs showed an absorption peak at 288 nm. Photoluminescence excitation (PLE) and photoluminescence (PL) are used to study the optical properties of TeQDs. Both the PLE and PL peaks revealed a linear relationship against the emission and excitation energies, respectively. TeQDs have important potential applications in biological imaging and catalysis as well as optoelectronics.

  16. Biosensing with Luminescent Semiconductor Quantum Dots

    Directory of Open Access Journals (Sweden)

    Hedi Mattoussi

    2006-08-01

    Full Text Available Luminescent semiconductor nanocrystals or quantum dots (QDs are a recentlydeveloped class of nanomaterial whose unique photophysical properties are helping tocreate a new generation of robust fluorescent biosensors. QD properties of interest forbiosensing include high quantum yields, broad absorption spectra coupled to narrow sizetunablephotoluminescent emissions and exceptional resistance to both photobleaching andchemical degradation. In this review, we examine the progress in adapting QDs for severalpredominantly in vitro biosensing applications including use in immunoassays, asgeneralized probes, in nucleic acid detection and fluorescence resonance energy transfer(FRET - based sensing. We also describe several important considerations when workingwith QDs mainly centered on the choice of material(s and appropriate strategies forattaching biomolecules to the QDs.

  17. Quantum dots: synthesis, bioapplications, and toxicity

    Science.gov (United States)

    Valizadeh, Alireza; Mikaeili, Haleh; Samiei, Mohammad; Farkhani, Samad Mussa; Zarghami, Nosratalah; kouhi, Mohammad; Akbarzadeh, Abolfazl; Davaran, Soodabeh

    2012-08-01

    This review introduces quantum dots (QDs) and explores their properties, synthesis, applications, delivery systems in biology, and their toxicity. QDs are one of the first nanotechnologies to be integrated with the biological sciences and are widely anticipated to eventually find application in a number of commercial consumer and clinical products. They exhibit unique luminescence characteristics and electronic properties such as wide and continuous absorption spectra, narrow emission spectra, and high light stability. The application of QDs, as a new technology for biosystems, has been typically studied on mammalian cells. Due to the small structures of QDs, some physical properties such as optical and electron transport characteristics are quite different from those of the bulk materials.

  18. Recent advances in quantum dot surface chemistry.

    Science.gov (United States)

    Hines, Douglas A; Kamat, Prashant V

    2014-03-12

    Quantum dot (QD) surface chemistry is an emerging field in semiconductor nanocrystal related research. Along with size manipulation, the careful control of QD surface chemistry allows modulation of the optical properties of a QD suspension. Even a single molecule bound to the surface can introduce new functionalities. Herein, we summarize the recent advances in QD surface chemistry and the resulting effects on optical and electronic properties. Specifically, this review addresses three main issues: (i) how surface chemistry affects the optical properties of QDs, (ii) how it influences the excited state dynamics, and (iii) how one can manipulate surface chemistry to control the interactions between QDs and metal oxides, metal nanoparticles, and in self-assembled QD monolayers.

  19. Electronic levels of cubic quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Aristone, Flavio [Federal De Mato Grosso Do Sul Univ., Campo Grande (Brazil); Sanchez-Dehesa, Jose [Autonoma De Madrid Univ., Madrid (Spain); Marques, Gilmar E. [Federal De Sao Carlos Univ., Sao Carlos (Brazil)

    2003-09-01

    We introduce an efficient variational method to solve the three-dimensional Schroedinger equation for any arbitrary potential V(x,y,z). The method uses a basis set of localized functions which are build up as products of one-dimensional cubic {beta}-splines. We calculated the energy levels of GaAs/AlGaAs cubic quantum dots and make a comparison with the results from two well-known simplification schemes based on a decomposition of the full potential problem into three separate one-dimensional problems. We show that the scheme making a sequential decomposition gives eigenvalues in better agreement with the ones obtained variationally, but an exact solution is necessary when looking for highly precise values.

  20. Dynamic localization in quantum dots: Analytical theory

    International Nuclear Information System (INIS)

    Basko, D.M.; Skvortsov, M.A.; Kravtsov, V.E.

    2003-02-01

    We analyze the response of a complex quantum-mechanical system (e.g., a quantum dot) to a time-dependent perturbation φ(t). Assuming the dot to be described by random matrix theory for GOE we find the quantum correction to the energy absorption rate as a function of the dephasing time t φ . If φ(t) is a sum of d harmonics with incommensurate frequencies, the correction behaves similarly to that to the conductivity δσ d (t φ ) in the d-dimensional Anderson model of the orthogonal symmetry class. For a generic periodic perturbation the leading quantum correction is absent as in the systems of the unitary symmetry class, unless φ(-t+τ)=φ(t+τ) for some τ, which falls into the quasi-1d orthogonal universality class. (author)

  1. Protease-activated quantum dot probes

    International Nuclear Information System (INIS)

    Chang, Emmanuel; Miller, Jordan S.; Sun, Jiantang; Yu, William W.; Colvin, Vicki L.; Drezek, Rebekah; West, Jennifer L.

    2005-01-01

    We have developed a novel nanoparticulate luminescent probe with inherent signal amplification upon interaction with a targeted proteolytic enzyme. This construct may be useful for imaging in cancer detection and diagnosis. In this system, quantum dots (QDs) are bound to gold nanoparticles (AuNPs) via a proteolytically degradable peptide sequence to non-radiatively suppress luminescence. A 71% reduction in luminescence was achieved with conjugation of AuNPs to QDs. Release of AuNPs by peptide cleavage restores radiative QD photoluminescence. Initial studies observed a 52% rise in luminescence over 47 h of exposure to 0.2 mg/mL collagenase. These probes can be customized for targeted degradation simply by changing the sequence of the peptide linker

  2. PREFACE: Quantum dots as probes in biology

    Science.gov (United States)

    Cieplak, Marek

    2013-05-01

    The recent availability of nanostructured materials has resulted in an explosion of research focused on their unique optical, thermal, mechanical and magnetic properties. Optical imagining, magnetic enhancement of contrast and drug delivery capabilities make the nanoparticles of special interest in biomedical applications. These materials have been involved in the development of theranostics—a new field of medicine that is focused on personalized tests and treatment. It is likely that multimodal nanomaterials will be responsible for future diagnostic advances in medicine. Quantum dots (QD) are nanoparticles which exhibit luminescence either through the formation of three-dimensional excitons or excitations of the impurities. The excitonic luminescence can be tuned by changing the size (the smaller the size, the higher the frequency). QDs are usually made of semiconducting materials. Unlike fluorescent proteins and organic dyes, QDs resist photobleaching, allow for multi-wavelength excitations and have narrow emission spectra. The techniques to make QDs are cheap and surface modifications and functionalizations can be implemented. Importantly, QDs could be synthesized to exhibit useful optomagnetic properties and, upon functionalization with an appropriate biomolecule, directed towards a pre-selected target for diagnostic imaging and photodynamic therapy. This special issue on Quantum dots in Biology is focused on recent research in this area. It starts with a topical review by Sreenivasan et al on various physical mechanisms that lead to the QD luminescence and on using wavelength shifts for an improvement in imaging. The next paper by Szczepaniak et al discusses nanohybrids involving QDs made of CdSe coated by ZnS and combined covalently with a photosynthetic enzyme. These nanohybrids are shown to maintain the enzymatic activity, however the enzyme properties depend on the size of a QD. They are proposed as tools to study photosynthesis in isolated

  3. Silicon quantum dots: fine-tuning to maturity.

    Science.gov (United States)

    Morello, Andrea

    2015-12-18

    Quantum dots in semiconductor heterostructures provide one of the most flexible platforms for the study of quantum phenomena at the nanoscale. The surging interest in using quantum dots for quantum computation is forcing researchers to rethink fabrication and operation methods, to obtain highly tunable dots in spin-free host materials, such as silicon. Borselli and colleagues report in Nanotechnology the fabrication of a novel Si/SiGe double quantum dot device, which combines an ultra-low disorder Si/SiGe accumulation-mode heterostructure with a stack of overlapping control gates, ensuring tight confining potentials and exquisite tunability. This work signals the technological maturity of silicon quantum dots, and their readiness to be applied to challenging projects in quantum information science.

  4. Nodal ground states and orbital textures in semiconductor quantum dots

    Czech Academy of Sciences Publication Activity Database

    Lee, J.; Výborný, Karel; Han, J.E.; Žutič, I.

    2014-01-01

    Roč. 89, č. 4 (2014), "045315-1"-"045315-17" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : quantum dots * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  5. Nonequilibrium electron transport through quantum dots in the Kondo regime

    DEFF Research Database (Denmark)

    Wölfle, Peter; Paaske, Jens; Rosch, Achim

    2005-01-01

    Electron transport at large bias voltage through quantum dots in the Kondo regime is described within the perturbative renormalization group extended to nonequilibrium. The conductance, local magnetization, dynamical spin susceptibility and local spectral function are calculated. We show how the ...

  6. Light Scattering Spectroscopies of Semiconductor Nanocrystals (Quantum Dots)

    International Nuclear Information System (INIS)

    Yu, Peter Y; Gardner, Grat; Nozaki, Shinji; Berbezier, Isabelle

    2006-01-01

    We review the study of nanocrystals or quantum dots using inelastic light scattering spectroscopies. In particular recent calculations of the phonon density of states and low frequency Raman spectra in Ge nanocrystals are presented for comparison with experimental results

  7. A fabrication guide for planar silicon quantum dot heterostructures

    Science.gov (United States)

    Spruijtenburg, Paul C.; Amitonov, Sergey V.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.

    2018-04-01

    We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

  8. Exciton dephasing in single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states....... The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...... to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots....

  9. Quantum Logic Using Excitonic Quantum Dots in External Optical Microcavities

    National Research Council Canada - National Science Library

    Raymer, Michael

    2003-01-01

    An experimental project was undertaken to develop means to achieve quantum optical strong coupling between a single GaAs quantum dot and the optical mode of a microcavity for the purpose of quantum...

  10. Coal as an abundant source of graphene quantum dots

    Science.gov (United States)

    Ye, Ruquan; Xiang, Changsheng; Lin, Jian; Peng, Zhiwei; Huang, Kewei; Yan, Zheng; Cook, Nathan P.; Samuel, Errol L. G.; Hwang, Chih-Chau; Ruan, Gedeng; Ceriotti, Gabriel; Raji, Abdul-Rahman O.; Martí, Angel A.; Tour, James M.

    2013-12-01

    Coal is the most abundant and readily combustible energy resource being used worldwide. However, its structural characteristic creates a perception that coal is only useful for producing energy via burning. Here we report a facile approach to synthesize tunable graphene quantum dots from various types of coal, and establish that the unique coal structure has an advantage over pure sp2-carbon allotropes for producing quantum dots. The crystalline carbon within the coal structure is easier to oxidatively displace than when pure sp2-carbon structures are used, resulting in nanometre-sized graphene quantum dots with amorphous carbon addends on the edges. The synthesized graphene quantum dots, produced in up to 20% isolated yield from coal, are soluble and fluorescent in aqueous solution, providing promise for applications in areas such as bioimaging, biomedicine, photovoltaics and optoelectronics, in addition to being inexpensive additives for structural composites.

  11. Ge Quantum Dot Infrared Imaging Camera, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...

  12. Non-Markovian spontaneous emission from a single quantum dot

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg; Ates, Serkan; Lund-Hansen, Toke

    2011-01-01

    We observe non-Markovian dynamics of a single quantum dot when tuned into resonance with a cavity mode. Excellent agreement between experiment and theory is observed providing the first quantitative description of such a system....

  13. Charge-extraction strategies for colloidal quantum dot photovoltaics

    KAUST Repository

    Lan, Xinzheng

    2014-02-20

    The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p-and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction. © 2014 Macmillan Publishers Limited.

  14. The impact of doped silicon quantum dots on human osteoblasts

    Czech Academy of Sciences Publication Activity Database

    Ostrovská, L.; Brož, Antonín; Fučíková, A.; Bělinová, T.; Sugimoto, H.; Kanno, T.; Fujii, M.; Valenta, J.; Kalbáčová, M.H.

    2016-01-01

    Roč. 6, č. 68 (2016), s. 63403-63413 ISSN 2046-2069 Institutional support: RVO:67985823 Keywords : silicon quantum dots * osteoblasts * cytotoxicity * photoluminiscence bioimaging Subject RIV: EI - Biotechnology ; Bionics Impact factor: 3.108, year: 2016

  15. CdS/CdSSe quantum dots in glass matrix

    Indian Academy of Sciences (India)

    Wintec

    –5 nm are uniformly distributed into the glass matrix. Keywords. CdS; CdSSe; nanocrystals; glasses; optical filters. 1. Introduction. Today nanostructured materials and quantum dots have immense importance in the field of optoelectronics and.

  16. Spin current through quantum-dot spin valves

    International Nuclear Information System (INIS)

    Wang, J; Xing, D Y

    2006-01-01

    We report a theoretical study of the influence of the Coulomb interaction on the equilibrium spin current in a quantum-dot spin valve, in which the quantum dot described by the Anderson impurity model is coupled to two ferromagnetic leads with noncollinear magnetizations. In the Kondo regime, electrons transmit through the quantum dot via higher-order virtual processes, in which the spin of either lead electrons or a localized electron on the quantum dot may reverse. It is found that the magnitude of the spin current decreases with increasing Coulomb interactions due to spin flip effects on the dot. However, the spatial direction of the spin current remains unchanged; it is determined only by the exchange coupling between two noncollinear magnetizations

  17. Quantum Dots in the Therapy: Current Trends and Perspectives.

    Science.gov (United States)

    Pohanka, Miroslav

    2017-01-01

    Quantum dots are an emerging nanomaterial with broad use in technical disciplines; however, their application in the field of biomedicine becomes also relevant and significant possibilities have appeared since the discovery in 1980s. The current review is focused on the therapeutic applications of quantum dots which become an emerging use of the particles. They are introduced as potent carriers of drugs and as a material well suited for the diagnosis of disparate pathologies like visualization of cancer cells or pathogenic microorganisms. Quantum dots toxicity and modifications for the toxicity reduction are discussed here as well. Survey of actual papers and patents in the field of quantum dots use in the biomedicine is provided. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  18. A triple quantum dot based nano-electromechanical memory device

    International Nuclear Information System (INIS)

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-01-01

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM

  19. Quantum dot blueing and blinking enables fluorescence nanoscopy.

    Science.gov (United States)

    Hoyer, Patrick; Staudt, Thorsten; Engelhardt, Johann; Hell, Stefan W

    2011-01-12

    We demonstrate superresolution fluorescence imaging of cells using bioconjugated CdSe/ZnS quantum dot markers. Fluorescence blueing of quantum dot cores facilitates separation of blinking markers residing closer than the diffraction barrier. The high number of successively emitted photons enables ground state depletion microscopy followed by individual marker return with a resolving power of the size of a single dot (∼12 nm). Nanoscale imaging is feasible with a simple webcam.

  20. Spin and edge channel dependent transport through quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ridder, T; Rogge, M C; Haug, R J [Institut fuer Festkoerperphysik, Gottfried Wilhelm Leibniz Universitaet Hannover, Appelstrasse 2, D-30167 Hannover (Germany)], E-mail: ridder@nano.uni-hannover.de

    2008-11-12

    We investigate the influence of spin polarized currents and non-equilibrated edge channels on the transport properties of a single quantum dot. Polarized currents are realized by the manual depletion of edge channels in high magnetic fields via a metallic top gate covering the source contact in the system. We observe a suppression and enhancement in the conductance of the quantum dot dependent on the edge channel configuration in the leads.

  1. Highly Efficient Spontaneous Emission from Self-Assembled Quantum Dots

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Lund-Hansen, Toke; Hvam, Jørn Märcher

    2006-01-01

    We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency.......We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency....

  2. Spin-orbit-enhanced Wigner localization in quantum dots

    DEFF Research Database (Denmark)

    Cavalli, Andrea; Malet, F.; Cremon, J. C.

    2011-01-01

    We investigate quantum dots with Rashba spin-orbit coupling in the strongly-correlated regime. We show that the presence of the Rashba interaction enhances the Wigner localization in these systems, making it achievable for higher densities than those at which it is observed in Rashba-free quantum...... dots. Recurring shapes in the pair distribution functions of the yrast spectrum, which might be associated with rotational and vibrational modes, are also reported....

  3. Quantum optics with quantum dots in photonic nanowires

    DEFF Research Database (Denmark)

    We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....

  4. Solution-Processed Nanocrystal Quantum Dot Tandem Solar Cells

    KAUST Repository

    Choi, Joshua J.

    2011-06-03

    Solution-processed tandem solar cells created from nanocrystal quantum dots with size-tuned energy levels are demonstrated. Prototype devices featuring interconnected quantum dot layers of cascaded energy gaps exhibit IR sensitivity and an open circuit voltage, V oc, approaching 1 V. The tandem solar cell performance depends critically on the optical and electrical properties of the interlayer. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Self-Sustaining Dynamical Nuclear Polarization Oscillations in Quantum Dots

    DEFF Research Database (Denmark)

    Rudner, Mark Spencer; Levitov, Leonid

    2013-01-01

    Early experiments on spin-blockaded double quantum dots revealed robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias. Despite experimental evidence implicating dynamical nuclear polarization, the mechanism has remained a mystery. Here we introduce......) and nuclear spin diffusion, which governs dynamics of the spatial profile of nuclear polarization. The proposed framework naturally explains the differences in phenomenology between vertical and lateral quantum dot structures as well as the extremely long oscillation periods....

  6. Gate-defined quantum dots in intrinsic silicon.

    Science.gov (United States)

    Angus, Susan J; Ferguson, Andrew J; Dzurak, Andrew S; Clark, Robert G

    2007-07-01

    We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron ( approximately 100 electrons) regime and the few-electron ( approximately 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon.

  7. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    Lin Wen

    2017-07-01

    Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  8. Enhanced thermoelectric properties in boron nitride quantum-dot

    Science.gov (United States)

    Pan, Changning; Long, Mengqiu; He, Jun

    We have investigated the ballistic thermoelectric properties in boron nitride quantum dots by using the nonequilibrium Green's function approach and the Landauer transport theory. The result shows that the phonon transport is substantially suppressed by the interface in the quantum dots. The resonant tunneling effect of electron leads to the fluctuations of the electronic conductance. It enhances significantly the Seebeck coefficient. Combined with the low thermal conductance of phonon, the high thermoelectric figure of merit ZT ∼0.78 can be obtained at room temperature T = 300 K and ZT ∼0.95 at low temperature T = 100 K. It is much higher than that of graphene quantum dots with the same geometry parameters, which is ZT ∼0.29 at room temperature T = 300 K and ZT ∼0.48 at low temperature T = 100 K. The underlying mechanism is that the boron nitride quantum dots possess higher thermopower and lower phonon thermal conductance than the graphene quantum dots. Thus the results indicate that the thermoelectric properties of boron nitride can be significantly enhanced by the quantum dot and are better than those of graphene.

  9. First principles study of edge carboxylated graphene quantum dots

    Science.gov (United States)

    Abdelsalam, Hazem; Elhaes, Hanan; Ibrahim, Medhat A.

    2018-05-01

    The structure stability and electronic properties of edge carboxylated hexagonal and triangular graphene quantum dots are investigated using density functional theory. The calculated binding energies show that the hexagonal clusters with armchair edges have the highest stability among all the quantum dots. The binding energy of carboxylated graphene quantum dots increases by increasing the number of carboxyl groups. Our study shows that the total dipole moment significantly increases by adding COOH with the highest value observed in triangular clusters. The edge states in triangular graphene quantum dots with zigzag edges produce completely different energy spectrum from other dots: (a) the energy gap in triangular zigzag is very small as compared to other clusters and (b) the highest occupied molecular orbital is localized at the edges which is in contrast to other clusters where it is distributed over the cluster surface. The enhanced reactivity and the controllable energy gap by shape and edge termination make graphene quantum dots ideal for various nanodevice applications such as sensors. The infrared spectra are presented to confirm the stability of the quantum dots.

  10. Graphene quantum dots probed by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morgenstern, Markus; Freitag, Nils; Nent, Alexander; Nemes-Incze, Peter; Liebmann, Marcus [II. Institute of Physics B and JARA-FIT, RWTH Aachen University, Aachen (Germany)

    2017-11-15

    Scanning tunneling spectroscopy results probing the electronic properties of graphene quantum dots are reviewed. After a short summary of the study of squared wave functions of graphene quantum dots on metal substrates, we firstly present data where the Landau level gaps caused by a perpendicular magnetic field are used to electrostatically confine electrons in monolayer graphene, which are probed by the Coulomb staircase revealing the consecutive charging of a quantum dot. It turns out that these quantum dots exhibit much more regular charging sequences than lithographically confined ones. Namely, the consistent grouping of charging peaks into quadruplets, both, in the electron and hole branch, portrays a regular orbital splitting of about 10meV. At low hole occupation numbers, the charging peaks are, partly, additionally grouped into doublets. The spatially varying energy separation of the doublets indicates a modulation of the valley splitting by the underlying BN substrate. We outline that this property might be used to eventually tune the valley splitting coherently. Afterwards, we describe graphene quantum dots with multiple contacts produced without lithographic resist, namely by local anodic oxidation. Such quantum dots target the goal to probe magnetotransport properties during the imaging of the corresponding wave functions by scanning tunneling spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Colloidal quantum dot photovoltaics: The effect of polydispersity

    KAUST Repository

    Zhitomirsky, David

    2012-02-08

    The size-effect tunability of colloidal quantum dots enables facile engineering of the bandgap at the time of nanoparticle synthesis. The dependence of effective bandgap on nanoparticle size also presents a challenge if the size dispersion, hence bandgap variability, is not well-controlled within a given quantum dot solid. The impact of this polydispersity is well-studied in luminescent devices as well as in unipolar electronic transport; however, the requirements on monodispersity have yet to be quantified in photovoltaics. Here we carry out a series of combined experimental and model-based studies aimed at clarifying, and quantifying, the importance of quantum dot monodispersity in photovoltaics. We successfully predict, using a simple model, the dependence of both open-circuit voltage and photoluminescence behavior on the density of small-bandgap (large-diameter) quantum dot inclusions. The model requires inclusion of trap states to explain the experimental data quantitatively. We then explore using this same experimentally tested model the implications of a broadened quantum dot population on device performance. We report that present-day colloidal quantum dot photovoltaic devices with typical inhomogeneous linewidths of 100-150 meV are dominated by surface traps, and it is for this reason that they see marginal benefit from reduction in polydispersity. Upon eliminating surface traps, achieving inhomogeneous broadening of 50 meV or less will lead to device performance that sees very little deleterious impact from polydispersity. © 2012 American Chemical Society.

  12. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.

    Science.gov (United States)

    Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

    2017-07-28

    Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  13. Spectroscopy characterization and quantum yield determination of quantum dots

    International Nuclear Information System (INIS)

    Ortiz, S N Contreras; Ospino, E Mejía; Cabanzo, R

    2016-01-01

    In this paper we show the characterization of two kinds of quantum dots: hydrophilic and hydrophobic, with core and core/shell respectively, using spectroscopy techniques such as UV-Vis, fluorescence and Raman. We determined the quantum yield in the quantum dots using the quinine sulphate as standard. This salt is commonly used because of its quantum yield (56%) and stability. For the CdTe excitation, we used a wavelength of 549nm and for the CdSe/ZnS excitation a wavelength of 527nm. The results show that CdSe/ZnS (49%) has better fluorescence, better quantum dots, and confirm the fluorescence result. The quantum dots have shown a good fluorescence performance, so this property will be used to replace dyes, with the advantage that quantum dots are less toxic than some dyes like the rhodamine. In addition, in this work we show different techniques to find the quantum dots emission: fluorescence spectrum, synchronous spectrum and Raman spectrum. (paper)

  14. Heparin conjugated quantum dots for in vitro imaging applications.

    Science.gov (United States)

    Maguire, Ciaran Manus; Mahfoud, Omar Kazem; Rakovich, Tatsiana; Gerard, Valerie Anne; Prina-Mello, Adriele; Gun'ko, Yurii; Volkov, Yuri

    2014-11-01

    In this work heparin-gelatine multi-layered cadmium telluride quantum dots (QDgel/hep) were synthesised using a novel 'one-pot' method. The QDs produced were characterised using various spectroscopic and physiochemical techniques. Suitable QDs were then selected and compared to thioglycolic acid stabilised quantum dots (QDTGA) and gelatine coated quantum dots (QDgel) for utilisation in in vitro imaging experiments on live and fixed permeabilised THP-1, A549 and Caco-2 cell lines. Exposure of live THP-1 cells to QDgel/hep resulted in localisation of the QDs to the nucleus of the cells. QDgel/hep show affinity for the nuclear compartment of fixed permeabilised THP-1 and A549 cells but remain confined to cytoplasm of fixed permeabilised Caco-2 cells. It is postulated that heparin binding to the CD11b receptor facilitates the internalisation of the QDs into the nucleus of THP-1 cells. In addition, the heparin layer may reduce the unfavourable thrombogenic nature of quantum dots observed in vivo. In this study, heparin conjugated quantum dots were found to have superior imaging properties compared to its native counterparts. The authors postulate that heparin binding to the CD11b receptor facilitates QD internalization to the nucleus, and the heparin layer may reduce the in vivo thrombogenic properties of quantum dots. Copyright © 2014 Elsevier Inc. All rights reserved.

  15. Design of quaternary logic circuit using quantum dot gate-quantum dot channel FET (QDG-QDCFET)

    Science.gov (United States)

    Karmakar, Supriya

    2014-10-01

    This paper presents the implementation of quaternary logic circuits based on quantum dot gate-quantum dot channel field effect transistor (QDG-QDCFET). The super lattice structure in the quantum dot channel region of QDG-QDCFET and the electron tunnelling from inversion channel to the quantum dot layer in the gate region of a QDG-QDCFET change the threshold voltage of this device which produces two intermediate states between its ON and OFF states. This property of QDG-QDCFET is used to implement multi-valued logic for future multi-valued logic circuit. This paper presents the design of basic quaternary logic operation such as inverter, AND and OR operation based on QDG-QDCFET.

  16. Scalable quantum computer architecture with coupled donor-quantum dot qubits

    Science.gov (United States)

    Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

    2014-08-26

    A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

  17. Spectrally tunable mollow triplet emission from a coherently excited quantum dot in a microcavity

    DEFF Research Database (Denmark)

    Ulrich, Sven M.; Ates, Serkan; Reitzenstein, Stephan

    2010-01-01

    Resonance fluorescence of excitonic s-shell emission from a coherently pumped single InGaAs/GaAs quantum dot inside a micropillar cavity has been investigated in dependence on optical pump power and laser detuning, respectively. For strong purely resonant excitation, Mollow triplet spectra with l...... with large Rabi splittings of j~­j » 60¹eV have been observed. Laser detuning-dependent series revealed the pronounced asymmetry of the emission triplet as predicted by theory. From our data, an electrical dipole moment of ¹ » 17:8§0:5 Debye could be derived for the excitonic state....

  18. Photoresponse Enhancement in Monolayer ReS2 Phototransistor Decorated with CdSe-CdS-ZnS Quantum Dots.

    Science.gov (United States)

    Qin, Jing-Kai; Ren, Dan-Dan; Shao, Wen-Zhu; Li, Yang; Miao, Peng; Sun, Zhao-Yuan; Hu, PingAn; Zhen, Liang; Xu, Cheng-Yan

    2017-11-15

    ReS 2 films are considered as a promising candidate for optoelectronic applications due to their direct band gap character and optical/electrical anisotropy. However, the direct band gap in a narrow spectrum and the low absorption of atomically thin flakes weaken the prospect for light-harvesting applications. Here, we developed an efficient approach to enhance the performance of a ReS 2 -based phototransistor by coupling CdSe-CdS-ZnS core-shell quantum dots. Under 589 nm laser irradiation, the responsivity of the ReS 2 phototransistor decorated with quantum dots could be enhanced by more than 25 times (up to ∼654 A/W) and the rising and recovery time can be also reduced to 3.2 and 2.8 s, respectively. The excellent optoelectronic performance is originated from the coupling effect of quantum dots light absorber and cross-linker ligands 1,2-ethanedithiol. Photoexcited electron-hole pairs in quantum dots can separate and transfer efficiently due to the type-II band alignment and charge exchange process at the interface. Our work shows that the simple hybrid zero- and two-dimensional hybrid system can be employed for photodetection applications.

  19. Spectral and Dynamical Properties of Single Excitons, Biexcitons, and Trions in Cesium-Lead-Halide Perovskite Quantum Dots.

    Science.gov (United States)

    Makarov, Nikolay S; Guo, Shaojun; Isaienko, Oleksandr; Liu, Wenyong; Robel, István; Klimov, Victor I

    2016-04-13

    Organic-inorganic lead-halide perovskites have been the subject of recent intense interest due to their unusually strong photovoltaic performance. A new addition to the perovskite family is all-inorganic Cs-Pb-halide perovskite nanocrystals, or quantum dots, fabricated via a moderate-temperature colloidal synthesis. While being only recently introduced to the research community, these nanomaterials have already shown promise for a range of applications from color-converting phosphors and light-emitting diodes to lasers, and even room-temperature single-photon sources. Knowledge of the optical properties of perovskite quantum dots still remains vastly incomplete. Here we apply various time-resolved spectroscopic techniques to conduct a comprehensive study of spectral and dynamical characteristics of single- and multiexciton states in CsPbX3 nanocrystals with X being either Br, I, or their mixture. Specifically, we measure exciton radiative lifetimes, absorption cross-sections, and derive the degeneracies of the band-edge electron and hole states. We also characterize the rates of intraband cooling and nonradiative Auger recombination and evaluate the strength of exciton-exciton coupling. The overall conclusion of this work is that spectroscopic properties of Cs-Pb-halide quantum dots are largely similar to those of quantum dots of more traditional semiconductors such as CdSe and PbSe. At the same time, we observe some distinctions including, for example, an appreciable effect of the halide identity on radiative lifetimes, considerably shorter biexciton Auger lifetimes, and apparent deviation of their size dependence from the "universal volume scaling" previously observed for many traditional nanocrystal systems. The high efficiency of Auger decay in perovskite quantum dots is detrimental to their prospective applications in light-emitting devices and lasers. This points toward the need for the development of approaches for effective suppression of Auger

  20. Graphene and PbS quantum dot hybrid vertical phototransistor

    Science.gov (United States)

    Song, Xiaoxian; Zhang, Yating; Zhang, Haiting; Yu, Yu; Cao, Mingxuan; Che, Yongli; Dai, Haitao; Yang, Junbo; Ding, Xin; Yao, Jianquan

    2017-04-01

    A field-effect phototransistor based on a graphene and lead sulfide quantum dot (PbS QD) hybrid in which PbS QDs are embedded in a graphene matrix has been fabricated with a vertical architecture through a solution process. The n-type Si/SiO2 substrate (gate), Au/Ag nanowire transparent source electrode, active layer and Au drain electrode are vertically stacked in the device, which has a downscaled channel length of 250 nm. Photoinduced electrons in the PbS QDs leap into the conduction band and fill in the trap states, while the photoinduced holes left in the valence band transfer to the graphene and form the photocurrent under biases from which the photoconductive gain is evaluated. The graphene/QD-based vertical phototransistor shows a photoresponsivity of 2 × 103 A W-1, and specific detectivity up to 7 × 1012 Jones under 808 nm laser illumination with a light irradiance of 12 mW cm-2. The solution-processed vertical phototransistor provides a new facile method for optoelectronic device applications.

  1. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-05-23

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  2. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  3. Controlling the quantum dot nucleation site

    International Nuclear Information System (INIS)

    Motta, Nunzio; Sgarlata, Anna; Rosei, Federico; Szkutnik, P.D.; Nufris, S.; Scarselli, M.; Balzarotti, A.

    2003-01-01

    Quantum dots (QDs) are actually easily produced by self-assembling during heteroepitaxial growth of semiconductors. In order to exploit the unique electronic properties of semiconductor QDs in novel quantum effect devices, the lateral dimensions of these structures have to be reduced to the order of tens of nanometers, which is the range of the De Broglie wavelength of electrons inside these materials. Moreover, millions of QDs must be arranged in dense ordered arrays to achieve the necessary active volume for optoelectronic applications. Nowadays it is possible to control size and shape of the nanocrystals, but it is still difficult to decide their nucleation site. Many approaches have been undertaken to overcome this problem, like using regular dislocation networks, lithographically and Atomic Force Microscopy (AFM) patterned substrates, naturally patterned surfaces. We present results obtained by some of these methods, visualized by Scanning Tunnelling Microscopy (STM) or AFM microscopy. STM measurements at high temperature during the epitaxial growth are of great help in these studies. Images and movies of the growth of Ge on Si help to identify the real nucleation sites of the islands and to follow their evolution. The influence of the 'step bunching' on the self-organization of Ge islands on Si(111) surfaces will be analysed, as an example of growth on self-nanostructured surfaces

  4. Bismides: 2D structures and quantum dots

    Science.gov (United States)

    Pačebutas, Vaidas; Butkutė, Renata; Čechavičius, Bronislovas; Stanionytė, Sandra; Pozingytė, Evelina; Skapas, Martynas; Selskis, Algirdas; Geižutis, Andrejus; Krotkus, Arūnas

    2017-09-01

    The growth and characterization of ternary GaAsBi and quaternary GaInAsBi compound quantum wells (QWs) on GaAs substrates is presented in this study. The influence of technological parameters, such as different growth modes, substrate temperatures, beam equivalent pressure ratios and thermal treating on structural and luminescent properties of QWs is discussed. The complex structural investigations using x-ray diffraction, atomic force microscopy and high-resolution transmission electron microscopy revealed high crystal structure, smooth surfaces and abrupt interfaces of both GaAsBi and GaInAsBi QWs. The temperature dependent photoluminescence measurements demonstrated emission wavelengths up to 1.43 µm in room temperature PL spectra measured for GaAsBi/GaAs QWs containing 12% Bi, whereas GaInAsBi QWs with 4.2% of bismuth inserted between GaAs barriers has reached 1.25 µm. Moreover, the annealing at high temperatures of GaAsBi/AlAs QWs stimulated agglomeration of bismuth to quantum dots in the well layers, emitting at 1.5 µm. The achieved wavelengths are the longest ones declared for the GaAsBi and GaInAsBi QW structures grown on the GaAs substrate, therefore bismide-based QWs are the promising structures for applications in infrared devices.

  5. Cyto-molecular Tuning of Quantum Dots

    Science.gov (United States)

    Lee, Bong; Suresh, Sindhuja; Ekpenyong, Andrew

    Quantum dots (QDs) are semiconductor nanoparticles composed of groups II-VI or III-V elements, with physical dimensions smaller than the exciton Bohr radius, and between 1-10 nm. Their applications and promising myriad applications in photovoltaic cells, biomedical imaging, targeted drug delivery, quantum computing, etc, have led to much research on their interactions with other systems. For biological systems, research has focused on biocompatibility and cytotoxicity of QDs in the context of imaging/therapy. However, there is a paucity of work on how biological systems might be used to tune QDs. Here, we hypothesize that the photo-electronic properties of QDs can be tuned by biological macromolecules following controlled changes in cellular activities. Using CdSe/ZnS core-shell QDs, we perform spectroscopic analysis of optically excited colloidal QDs with and without promyelocytic HL60 cells. Preliminary results show shifts in the emission spectra of the colloidal dispersions with and without cells. We will present results for activated HL60-derived cells where specific macromolecules produced by these cells perturb the electric dipole moments of the excited QDs and the associated electric fields, in ways that constitute what we describe as cyto-molecular tuning. Startup funds from the College of Arts and Sciences, Creighton University (to AEE).

  6. Selective targeting of microglia by quantum dots

    Directory of Open Access Journals (Sweden)

    Minami S Sakura

    2012-01-01

    Full Text Available Abstract Background Microglia, the resident immune cells of the brain, have been implicated in brain injury and various neurological disorders. However, their precise roles in different pathophysiological situations remain enigmatic and may range from detrimental to protective. Targeting the delivery of biologically active compounds to microglia could help elucidate these roles and facilitate the therapeutic modulation of microglial functions in neurological diseases. Methods Here we employ primary cell cultures and stereotaxic injections into mouse brain to investigate the cell type specific localization of semiconductor quantum dots (QDs in vitro and in vivo. Two potential receptors for QDs are identified using pharmacological inhibitors and neutralizing antibodies. Results In mixed primary cortical cultures, QDs were selectively taken up by microglia; this uptake was decreased by inhibitors of clathrin-dependent endocytosis, implicating the endosomal pathway as the major route of entry for QDs into microglia. Furthermore, inhibiting mannose receptors and macrophage scavenger receptors blocked the uptake of QDs by microglia, indicating that QD uptake occurs through microglia-specific receptor endocytosis. When injected into the brain, QDs were taken up primarily by microglia and with high efficiency. In primary cortical cultures, QDs conjugated to the toxin saporin depleted microglia in mixed primary cortical cultures, protecting neurons in these cultures against amyloid beta-induced neurotoxicity. Conclusions These findings demonstrate that QDs can be used to specifically label and modulate microglia in primary cortical cultures and in brain and may allow for the selective delivery of therapeutic agents to these cells.

  7. Quantum dot mediated imaging of atherosclerosis

    Energy Technology Data Exchange (ETDEWEB)

    Jayagopal, Ashwath; Haselton, Frederick R [Department of Biomedical Engineering, Vanderbilt University School of Medicine, Nashville, TN 37232 (United States); Su Yanru; Blakemore, John L; Linton, MacRae F; Fazio, Sergio [Department of Medicine, Vanderbilt University School of Medicine, Nashville, TN 37232 (United States)], E-mail: rick.haselton@vanderbilt.edu

    2009-04-22

    The progression of atherosclerosis is associated with leukocyte infiltration within lesions. We describe a technique for the ex vivo imaging of cellular recruitment in atherogenesis which utilizes quantum dots (QD) to color-code different cell types within lesion areas. Spectrally distinct QD were coated with the cell-penetrating peptide maurocalcine to fluorescently-label immunomagnetically isolated monocyte/macrophages and T lymphocytes. QD-maurocalcine bioconjugates labeled both cell types with a high efficiency, preserved cell viability, and did not perturb native leukocyte function in cytokine release and endothelial adhesion assays. QD-labeled monocyte/macrophages and T lymphocytes were reinfused in an ApoE{sup -/-} mouse model of atherosclerosis and age-matched controls and tracked for up to four weeks to investigate the incorporation of cells within aortic lesion areas, as determined by oil red O (ORO) and immunofluorescence ex vivo staining. QD-labeled cells were visible in atherosclerotic plaques within two days of injection, and the two cell types colocalized within areas of subsequent ORO staining. Our method for tracking leukocytes in lesions enables high signal-to-noise ratio imaging of multiple cell types and biomarkers simultaneously within the same specimen. It also has great utility in studies aimed at investigating the role of distinct circulating leukocyte subsets in plaque development and progression.

  8. Exciton coherence in semiconductor quantum dots

    International Nuclear Information System (INIS)

    Ishi-Hayase, Junko; Akahane, Kouichi; Yamamoto, Naokatsu; Sasaki, Masahide; Kujiraoka, Mamiko; Ema, Kazuhiro

    2009-01-01

    The coherent dynamics of excitons in InAs quantum dots (QDs) was investigated in the telecommunication wavelength range using a transient four-wave mixing technique. The sample was fabricated on an InP(311)B substrate using strain compensation to control the emission wavelength. This technique also enabled us to fabricate a 150-layer stacked QD structure for obtaining a high S/N in the four-wave mixing measurements, although no high-sensitive heterodyne detection was carried out. The dephasing time and transition dipole moment were precisely estimated from the polarization dependence of signals, taking into account their anisotropic properties. The population lifetimes of the excitons were also measured by using a polarization-dependent pumpprobe technique. A quantitative comparison of these anisotropies demonstrates that in our QDs, non-radiative population relaxation, polarization relaxation and pure dephasing are considerably smaller than the radiative relaxation. A comparison of the results of the four-wave mixing and pump-probe measurements revealed that the pure dephasing could be directly estimated with an accuracy of greater than 0.1 meV by comparing the results of four-wave mixing and pump-probe measurements. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Application of Quantum Dots in Biological Imaging

    Directory of Open Access Journals (Sweden)

    Shan Jin

    2011-01-01

    Full Text Available Quantum dots (QDs are a group of semiconducting nanomaterials with unique optical and electronic properties. They have distinct advantages over traditional fluorescent organic dyes in chemical and biological studies in terms of tunable emission spectra, signal brightness, photostability, and so forth. Currently, the major type of QDs is the heavy metal-containing II-IV, IV-VI, or III-V QDs. Silicon QDs and conjugated polymer dots have also been developed in order to lower the potential toxicity of the fluorescent probes for biological applications. Aqueous solubility is the common problem for all types of QDs when they are employed in the biological researches, such as in vitro and in vivo imaging. To circumvent this problem, ligand exchange and polymer coating are proven to be effective, besides synthesizing QDs in aqueous solutions directly. However, toxicity is another big concern especially for in vivo studies. Ligand protection and core/shell structure can partly solve this problem. With the rapid development of QDs research, new elements and new morphologies have been introduced to this area to fabricate more safe and efficient QDs for biological applications.

  10. Microwave mediated synthesis of semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Afrasiabi, Roodabeh; Sugunan, Abhilash; Shahid, Robina; Toprak, Muhammet S.; Muhammed, Mamoun [Division of Functional Materials, Royal Institute of Technology (KTH), Stockholm (Sweden)

    2012-07-15

    Colloidal quantum dots (QD) have tuneable optoelectronic properties and can be easily handled by simple solution processing techniques, making them very attractive for a wide range of applications. Over the past decade synthesis of morphology controlled high quality (crystalline, monodisperse) colloidal QDs by thermal decomposition of organometallic precursors has matured and is well studied. Recently, synthesis of colloidal QDs by microwave irradiation as heating source is being studied due to the inherently different mechanisms of heat transfer, when compared to solvent convection based heating. Under microwave irradiation, polar precursor molecules directly absorb the microwave energy and heat up more efficiently. Here we report synthesis of colloidal II-VI semiconductor QDs (CdS, CdSe, CdTe) by microwave irradiation and compare it with conventional synthesis based on convection heating. Our findings show that QD synthesis by microwave heating is more efficient and the chalcogenide precursor strongly absorbs the microwave radiation shortening the reaction time and giving a high reaction yield (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode.

    Science.gov (United States)

    Kuhlmann, Andreas V; Houel, Julien; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D; Warburton, Richard J

    2013-07-01

    Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10(7) and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920-980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

  12. A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

    International Nuclear Information System (INIS)

    Kuhlmann, Andreas V.; Houel, Julien; Warburton, Richard J.; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D.

    2013-01-01

    Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10 7 and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920–980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance

  13. A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

    Energy Technology Data Exchange (ETDEWEB)

    Kuhlmann, Andreas V.; Houel, Julien; Warburton, Richard J. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland); Brunner, Daniel [Instituto de Física Interdisciplinar y Sistemas Complejos, IFISC (CSIC-UIB), Campus Universitat Illes Balears, E-07122 Palma de Mallorca (Spain); Ludwig, Arne [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland); Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany); Reuter, Dirk [Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany); Department Physik, Universität Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany); Wieck, Andreas D. [Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany)

    2013-07-15

    Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10{sup 7} and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920–980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

  14. High Efficiency Quantum Dot Sensitized Solar Cells Based on Direct Adsorption of Quantum Dots on Photoanodes.

    Science.gov (United States)

    Wang, Wenran; Jiang, Guocan; Yu, Juan; Wang, Wei; Pan, Zhenxiao; Nakazawa, Naoki; Shen, Qing; Zhong, Xinhua

    2017-07-12

    Unambiguously direct adsorption (DA) of initial oil-soluble quantum dots (QDs) on TiO 2 film electrode is a convenient and simple approach in the construction of quantum dot sensitized solar cells (QDSCs). Regrettably, low QD loading amount and poor reproducibility shadow the advantages of DA route and constrain its practical application. Herein, the influence of experimental variables in DA process on QD loading amount as well as on the photovoltaic performance of the resultant QDSCs was investigated and optimized systematically, including the choice of solvent, purification of QDs, and sensitization time, as well as QD concentration. Experimental results demonstrated that it is essential to choose appropriate solvent as well as control purification cycles of original QD suspensions so as to realize satisfactory QD loading amount and ensure the high reproducibility. In addition, DA mode renders efficient electron injection from QD to TiO 2 , yet low QD loading amount and adverse QD agglomeration in comparison with the well-developed capping ligand induced self-assembly (CLIS) deposition approach. Mg 2+ treatment on TiO 2 photoanodes can promote the QD loading amount in DA mode. The optimized QDSCs based on DA mode exhibited efficiencies of 6.90% and 9.02% for CdSe and Zn-Cu-In-Se QDSCs, respectively, which were comparable to the best results based on CLIS mode (6.88% and 9.56%, respectively).

  15. Influence of surface states of CuInS{sub 2} quantum dots in quantum dots sensitized photo-electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Zhuoyin; Liu, Yueli [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Wu, Lei [School of Electronic and Electrical, Wuhan Railway Vocational College of Technology, Wuhan 430205 (China); Zhao, Yinghan; Chen, Keqiang [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Chen, Wen, E-mail: chenw@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China)

    2016-12-01

    Graphical abstract: J–V curves of different ligands capped CuInS{sub 2} QDs sensitized TiO{sub 2} photo-electrodes. - Highlights: • DDT, OLA, MPA, and S{sup 2−} ligand capped CuInS{sub 2} quantum dot sensitized photo-electrodes are prepared. • Surface states of quantum dots greatly influence the electrochemical performance of CuInS{sub 2} quantum dot sensitized photo-electrodes. • S{sup 2−} ligand enhances the UV–vis absorption and electron–hole separation property as well as the excellent charge transfer performance of the photo-electrodes. - Abstract: Surface states are significant factor for the enhancement of electrochemical performance in CuInS{sub 2} quantum dot sensitized photo-electrodes. DDT, OLA, MPA, and S{sup 2−} ligand capped CuInS{sub 2} quantum dot sensitized photo-electrodes are prepared by thermolysis, solvethermal and ligand-exchange processes, respectively, and their optical properties and photoelectrochemical properties are investigated. The S{sup 2−} ligand enhances the UV–vis absorption and electron–hole separation property as well as the excellent charge transfer performance of the photo-electrodes, which is attributed to the fact that the atomic S{sup 2−} ligand for the interfacial region of quantum dots may improve the electron transfer rate. These S{sup 2−}-capped CuInS{sub 2} quantum dot sensitized photo-electrodes exhibit the excellent photoelectrochemical efficiency and IPCE peak value, which is higher than that of the samples with DDT, OLA and MPA ligands.

  16. Atomically precise, coupled quantum dots fabricated by cleaved edge overgrowth

    Science.gov (United States)

    Wegscheider, W.; Schedelbeck, G.; Bichler, M.; Abstreiter, G.

    Recent progress in the fabrication of quantum dots by molecular beam epitaxy along three directions in space is reviewed. The optical properties of different sample structures consisting of individual quantum dots, pairs of coupled dots as well as of linear arrays of dots are studied by microscopic photoluminescence spectroscopy. The high degree of control over shape, composition and position of the 7×7×7 nm3 size GaAs quantum dots, which form at the intesection of three orthogonal quantum wells, allows a detailed investigation of the influence of coupling between almost identical zero-dimensional objects. In contrast to the inhomogeneously broadened quantum well and quantum wire signals originating from the complex twofold cleaved edge overgrowth structure, the photoluminescence spetrum of an individual quantum dot exhibits a single sharp line (full width at half maximum denomination "artificial atoms" for the quantum dots. It is further demonstrated that an "artifical molecule", characterized by the existence of bonding and antibonding states can be assembled from two of such "artificial atoms". The coupling strength between the "artificial atoms" is adjusted by the "interatomic" distance and is reflected in the energetic separation of the bonding and antibonding levels and the linewidths of the corresponding interband transitions.

  17. SELF-ORGANIZATION OF LEAD SULFIDE QUANTUM DOTS INTO SUPERSTRUCTURES

    Directory of Open Access Journals (Sweden)

    Elena V. Ushakova

    2014-11-01

    Full Text Available The method of X-ray structural analysis (X-ray scattering at small angles is used to show that the structures obtained by self-organization on a substrate of lead sulfide (PbS quantum dots are ordered arrays. Self-organization of quantum dots occurs at slow evaporation of solvent from a cuvette. The cuvette is a thin layer of mica with teflon ring on it. The positions of peaks in SAXS pattern are used to calculate crystal lattice of obtained ordered structures. Such structures have a primitive orthorhombic crystal lattice. Calculated lattice parameters are: a = 21,1 (nm; b = 36,2 (nm; c = 62,5 (nm. Dimensions of structures are tens of micrometers. The spectral properties of PbS QDs superstructures and kinetic parameters of their luminescence are investigated. Absorption band of superstructures is broadened as compared to the absorption band of the quantum dots in solution; the luminescence band is slightly shifted to the red region of the spectrum, while its bandwidth is not changed much. Luminescence lifetime of obtained structures has been significantly decreased in comparison with the isolated quantum dots in solution, but remained the same for the lead sulfide quantum dots close-packed ensembles. Such superstructures can be used to produce solar cells with improved characteristics.

  18. Synthesis of CdSe Quantum Dots Using Fusarium oxysporum

    Directory of Open Access Journals (Sweden)

    Takaaki Yamaguchi

    2016-10-01

    Full Text Available CdSe quantum dots are often used in industry as fluorescent materials. In this study, CdSe quantum dots were synthesized using Fusarium oxysporum. The cadmium and selenium concentration, pH, and temperature for the culture of F. oxysporum (Fusarium oxysporum were optimized for the synthesis, and the CdSe quantum dots obtained from the mycelial cells of F. oxysporum were observed by transmission electron microscopy. Ultra-thin sections of F. oxysporum showed that the CdSe quantum dots were precipitated in the intracellular space, indicating that cadmium and selenium ions were incorporated into the cell and that the quantum dots were synthesized with intracellular metabolites. To reveal differences in F. oxysporum metabolism, cell extracts of F. oxysporum, before and after CdSe synthesis, were compared using sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE. The results suggested that the amount of superoxide dismutase (SOD decreased after CdSe synthesis. Fluorescence microscopy revealed that cytoplasmic superoxide increased significantly after CdSe synthesis. The accumulation of superoxide may increase the expression of various metabolites that play a role in reducing Se4+ to Se2− and inhibit the aggregation of CdSe to make nanoparticles.

  19. Andreev molecules in semiconductor nanowire double quantum dots.

    Science.gov (United States)

    Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

    2017-09-19

    Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

  20. Electroluminescence of colloidal ZnSe quantum dots

    International Nuclear Information System (INIS)

    Dey, S.C.; Nath, S.S.

    2011-01-01

    The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet). - Highlights: → Synthesis of ZnSe quantum dots by a green chemical route. → Characterisation: UV-vis absorption spectroscopy and transmission electron microscopy. → Analysis of UV-vis absorption spectrum and transmission electron micrographs. → Study of electro-optical properties by photoluminescence and electroluminescence. → Conclusion: ZnSe quantum dots can be used as LED with dual colour emission.

  1. A Quantum Dot with Spin-Orbit Interaction--Analytical Solution

    Science.gov (United States)

    Basu, B.; Roy, B.

    2009-01-01

    The practical applicability of a semiconductor quantum dot with spin-orbit interaction gives an impetus to study analytical solutions to one- and two-electron quantum dots with or without a magnetic field.

  2. Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

    Science.gov (United States)

    Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2018-02-23

    An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

  3. Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots

    NARCIS (Netherlands)

    de Weerd, C.; Shin, Y.; Marino, E.; Kim, J.; Lee, H.; Saeed, S.; Gregorkiewicz, T.

    2017-01-01

    Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other

  4. Origins of excitation-wavelength-dependent photoluminescence in WS2 quantum dots

    Science.gov (United States)

    Caigas, Septem P.; Santiago, Svette Reina Merden; Lin, Tzu-Neng; Lin, Cheng-An J.; Yuan, Chi-Tsu; Shen, Ji-Lin; Lin, Tai-Yuan

    2018-02-01

    We report the photoluminescence studies of pristine and diethylenetriamine-doped (DETA-doped) WS2 quantum dots (QDs) synthesized by pulsed laser ablation. The DETA-doped WS2 QDs revealed a notable improvement of the luminescence quantum yield from 0.1% to 15.2% in comparison to pristine WS2 QDs. On the basis of the photoluminescence (PL) under different excitation wavelengths and the emission-energy dependence of PL dynamics, we suggest that the excitation-wavelength-dependent (excitation-wavelength-independent) PL for pristine (DETA-doped) WS2 QDs is attributed to the recombination of carriers from the localized (delocalized) states.

  5. Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

    OpenAIRE

    Liao, M.; Chen, S.; Huo, S.; Chen, S.; Wu, J.; Tang, M.; Kennedy, K.; Li, W.; Kumar, S.; Martin, M.; Baron, T.; Jin, C.; Ross, I.; Seeds, A.; Liu, H.

    2017-01-01

    In this paper, we report monolithically integrated IIIV\\ud quantum dot (QD) light-emitting sources on silicon substrates\\ud for silicon photonics. We describe the first practical InAs/GaAs\\ud QD lasers monolithically grown on an offcut silicon (001) substrate\\ud due to the realization of high quality III-V epilayers on silicon with\\ud low defect density, indicating that the large material dissimilarity\\ud between III-Vs and silicon is no longer a fundamental barrier\\ud limiting monolithic gro...

  6. Indistinguishable and efficient single photons from a quantum dot in a planar nanobeam waveguide

    DEFF Research Database (Denmark)

    Kirsanské, Gabija; Nielsen, Henri Thyrrestrup; Daveau, Raphaël Sura

    2017-01-01

    We demonstrate a high-purity source of indistinguishable single photons using a quantum dot embedded in a nanophotonic waveguide. The source features a near-unity internal coupling efficiency and the collected photons are efficiently coupled off chip by implementing a taper that adiabatically...... allows pinpointing the residual decoherence processes, notably the effect of phonon broadening. Strict resonant excitation is implemented as well as another means of suppressing photon jitter, and the additional complexity of suppressing the excitation laser source is addressed. The paper opens a clear...

  7. Subcellular Localization of Thiol-Capped CdTe Quantum Dots in Living Cells

    Directory of Open Access Journals (Sweden)

    Chen Ji-Yao

    2009-01-01

    Full Text Available Abstract Internalization and dynamic subcellular distribution of thiol-capped CdTe quantum dots (QDs in living cells were studied by means of laser scanning confocal microscopy. These unfunctionalized QDs were well internalized into human hepatocellular carcinoma and rat basophilic leukemia cells in vitro. Co-localizations of QDs with lysosomes and Golgi complexes were observed, indicating that in addition to the well-known endosome-lysosome endocytosis pathway, the Golgi complex is also a main destination of the endocytosed QDs. The movement of the endocytosed QDs toward the Golgi complex in the perinuclear region of the cell was demonstrated.

  8. Biosensing with Quantum Dots: A Microfluidic Approach

    Science.gov (United States)

    Vannoy, Charles H.; Tavares, Anthony J.; Noor, M. Omair; Uddayasankar, Uvaraj; Krull, Ulrich J.

    2011-01-01

    Semiconductor quantum dots (QDs) have served as the basis for signal development in a variety of biosensing technologies and in applications using bioprobes. The use of QDs as physical platforms to develop biosensors and bioprobes has attracted considerable interest. This is largely due to the unique optical properties of QDs that make them excellent choices as donors in fluorescence resonance energy transfer (FRET) and well suited for optical multiplexing. The large majority of QD-based bioprobe and biosensing technologies that have been described operate in bulk solution environments, where selective binding events at the surface of QDs are often associated with relatively long periods to reach a steady-state signal. An alternative approach to the design of biosensor architectures may be provided by a microfluidic system (MFS). A MFS is able to integrate chemical and biological processes into a single platform and allows for manipulation of flow conditions to achieve, by sample transport and mixing, reaction rates that are not entirely diffusion controlled. Integrating assays in a MFS provides numerous additional advantages, which include the use of very small amounts of reagents and samples, possible sample processing before detection, ultra-high sensitivity, high throughput, short analysis time, and in situ monitoring. Herein, a comprehensive review is provided that addresses the key concepts and applications of QD-based microfluidic biosensors with an added emphasis on how this combination of technologies provides for innovations in bioassay designs. Examples from the literature are used to highlight the many advantages of biosensing in a MFS and illustrate the versatility that such a platform offers in the design strategy. PMID:22163723

  9. Si quantum dot structures and their applications

    Science.gov (United States)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  10. All-inorganic CsPbBr3 perovskite quantum dots embedded in dual-mesoporous silica with moisture resistance for two-photon-pumped plasmonic nanoLasers.

    Science.gov (United States)

    Chen, Yu; Yu, Minghuai; Ye, Shuai; Song, Jun; Qu, Junle

    2018-04-05

    Lead halide perovskite nanocrystals with efficient two-photon absorption and ease of achieving population inversion have been recognized as good candidates to achieve frequency up-conversion for biophotonics applications, but suffer from the limitation of the miniaturization of the device and its corresponding poor stability when exposed to atmospheric moisture. Here we demonstrate the miniaturization of plasmonic nanolasers via embedding perovskite quantum dots (QDs) in rationally designed dual-mesoporous silica with gold nanocore. The nanocomposite supports resonant surface plasmon-polaritons (SPPs), which overlap both spatially and spectrally with the CsPbBr3 QDs. The outcoupling between surface plasmon oscillations and photonics modes within a wavelength range completely overcomes the loss of localized surface plasmons, and finally contributes to a novel application of two-photon-pumped nanolasers. Large optical gain under two-photon excitation was observed as a result of resonant energy transfer from excited perovskite QDs to surface plasmon oscillations and stimulated emission of surface plasmons in a luminous mode. The outmost organic-inorganic hybrid shells of the dual-mesoporous silica nanocomposites act as a protective layer of the perovskite QDs against water and endow the nanocomposites with superhydrophobicity. This work provides an alternative inspiration for the design of new two-photon pumped nanolasers.

  11. Dynamically broken symmetry in periodically gated quantum dots: charge accumulation and DC-current

    International Nuclear Information System (INIS)

    Kwapinski, T.; Kohler, S.; Hanggi, P.

    2010-01-01

    Time-dependent electron transport through a quantum dot and double quantum dot systems in the presence of polychromatic external periodic quantum dot energy-level modulations is studied within the time evolution operator method for a tight-binding Hamiltonian. Analytical relations for the dc-current flowing through the system and the charge accumulated on a quantum dot are obtained for the zero-temperature limit.

  12. Far-field nanoscopy on a semiconductor quantum dot via a rapid-adiabatic-passage-based switch

    Science.gov (United States)

    Kaldewey, Timo; Kuhlmann, Andreas V.; Valentin, Sascha R.; Ludwig, Arne; Wieck, Andreas D.; Warburton, Richard J.

    2018-02-01

    The diffraction limit prevents a conventional optical microscope from imaging at the nanoscale. However, nanoscale imaging of molecules is possible by exploiting an intensity-dependent molecular switch1-3. This switch is translated into a microscopy scheme, stimulated emission depletion microscopy4-7. Variants on this scheme exist3,8-13, yet all exploit an incoherent response to the lasers. We present a scheme that relies on a coherent response to a laser. Quantum control of a two-level system proceeds via rapid adiabatic passage, an ideal molecular switch. We implement this scheme on an ensemble of quantum dots. Each quantum dot results in a bright spot in the image with extent down to 30 nm (λ/31). There is no significant loss of intensity with respect to confocal microscopy, resulting in a factor of 10 improvement in emitter position determination. The experiments establish rapid adiabatic passage as a versatile tool in the super-resolution toolbox.

  13. Charge pumping in strongly coupled molecular quantum dots

    Science.gov (United States)

    Haughian, Patrick; Yap, Han Hoe; Gong, Jiangbin; Schmidt, Thomas L.

    2017-11-01

    The interaction between electrons and the vibrational degrees of freedom of a molecular quantum dot can lead to an exponential suppression of the conductance, an effect which is commonly termed Franck-Condon blockade. Here, we investigate this effect in a quantum dot driven by time-periodic gate voltages and tunneling amplitudes using nonequilibrium Green's functions and a Floquet expansion. Building on previous results showing that driving can lift the Franck-Condon blockade, we investigate driving protocols which can be used to pump charge across the quantum dot. In particular, we show that due to the strongly coupled nature of the system, the pump current at resonance is an exponential function of the drive strength.

  14. Electro-optical properties of phosphorene quantum dots

    Science.gov (United States)

    Saroka, V. A.; Lukyanchuk, I.; Portnoi, M. E.; Abdelsalam, H.

    2017-08-01

    We study the electronic and optical properties of single-layer phosphorene quantum dots with various shapes, sizes, and edge types (including disordered edges) subjected to an external electric field normal to the structure plane. Compared to graphene quantum dots, in phosphorene clusters of similar shape and size there is a set of edge states with energies dispersed at around the Fermi level. These states make the majority of phosphorene quantum dots metallic and enrich the phosphorene absorption gap with low-energy absorption peaks tunable by the electric field. The presence of the edge states dispersed around the Fermi level is a characteristic feature that is independent of the edge morphology and roughness.

  15. A tunable colloidal quantum dot photo field-effect transistor

    KAUST Repository

    Ghosh, Subir

    2011-01-01

    We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel. © 2011 American Institute of Physics.

  16. Broadband room temperature strong coupling between quantum dots and metamaterials.

    Science.gov (United States)

    Indukuri, Chaitanya; Yadav, Ravindra Kumar; Basu, J K

    2017-08-17

    Herein, we report the first demonstration of room temperature enhanced light-matter coupling in the visible regime for metamaterials using cooperative coupled quasi two dimensional quantum dot assemblies located at precise distances from the hyperbolic metamaterial (HMM) templates. The non-monotonic variation of the magnitude of strong coupling, manifested in terms of strong splitting of the photoluminescence of quantum dots, can be explained in terms of enhanced LDOS near the surface of such metamaterials as well as the plasmon mediated super-radiance of closely spaced quantum dots (QDs). Our methodology of enhancing broadband, room temperature, light-matter coupling in the visible regime for metamaterials opens up new possibilities of utilising these materials for a wide range of applications including QD based thresholdless nanolasers and novel metamaterial based integrated photonic devices.

  17. Fabrication of quantum-dot devices in graphene

    Directory of Open Access Journals (Sweden)

    Satoshi Moriyama, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya, Shinya Uji, Maki Shimizu and Koji Ishibashi

    2010-01-01

    Full Text Available We describe our recent experimental results on the fabrication of quantum-dot devices in a graphene-based two-dimensional system. Graphene samples were prepared by micromechanical cleavage of graphite crystals on a SiO2/Si substrate. We performed micro-Raman spectroscopy measurements to determine the number of layers of graphene flakes during the device fabrication process. By applying a nanofabrication process to the identified graphene flakes, we prepared a double-quantum-dot device structure comprising two lateral quantum dots coupled in series. Measurements of low-temperature electrical transport show the device to be a series-coupled double-dot system with varied interdot tunnel coupling, the strength of which changes continuously and non-monotonically as a function of gate voltage.

  18. Colloidal quantum dot solids for solution-processed solar cells

    KAUST Repository

    Yuan, Mingjian

    2016-02-29

    Solution-processed photovoltaic technologies represent a promising way to reduce the cost and increase the efficiency of solar energy harvesting. Among these, colloidal semiconductor quantum dot photovoltaics have the advantage of a spectrally tuneable infrared bandgap, which enables use in multi-junction cells, as well as the benefit of generating and harvesting multiple charge carrier pairs per absorbed photon. Here we review recent progress in colloidal quantum dot photovoltaics, focusing on three fronts. First, we examine strategies to manage the abundant surfaces of quantum dots, strategies that have led to progress in the removal of electronic trap states. Second, we consider new device architectures that have improved device performance to certified efficiencies of 10.6%. Third, we focus on progress in solution-phase chemical processing, such as spray-coating and centrifugal casting, which has led to the demonstration of manufacturing-ready process technologies.

  19. Folded-light-path colloidal quantum dot solar cells.

    KAUST Repository

    Koleilat, Ghada I

    2013-01-01

    Colloidal quantum dot photovoltaics combine low-cost solution processing with quantum size-effect tuning to match absorption to the solar spectrum. Rapid advances have led to certified solar power conversion efficiencies of over 7%. Nevertheless, these devices remain held back by a compromise in the choice of quantum dot film thickness, balancing on the one hand the need to maximize photon absorption, mandating a thicker film, and, on the other, the need for efficient carrier extraction, a consideration that limits film thickness. Here we report an architecture that breaks this compromise by folding the path of light propagating in the colloidal quantum dot solid. Using this method, we achieve a substantial increase in short-circuit current, ultimately leading to improved power conversion efficiency.

  20. Rainbow Emission from an Atomic Transition in Doped Quantum Dots.

    Science.gov (United States)

    Hazarika, Abhijit; Pandey, Anshu; Sarma, D D

    2014-07-03

    Although semiconductor quantum dots are promising materials for displays and lighting due to their tunable emissions, these materials also suffer from the serious disadvantage of self-absorption of emitted light. The reabsorption of emitted light is a serious loss mechanism in practical situations because most phosphors exhibit subunity quantum yields. Manganese-based phosphors that also exhibit high stability and quantum efficiency do not suffer from this problem but in turn lack emission tunability, seriously affecting their practical utility. Here, we present a class of manganese-doped quantum dot materials, where strain is used to tune the wavelength of the dopant emission, extending the otherwise limited emission tunability over the yellow-orange range for manganese ions to almost the entire visible spectrum covering all colors from blue to red. These new materials thus combine the advantages of both quantum dots and conventional doped phosphors, thereby opening new possibilities for a wide range of applications in the future.

  1. Bound state properties of ABC -stacked trilayer graphene quantum dots

    International Nuclear Information System (INIS)

    Xiong, Haonan; Jiang, Wentao; Song, Yipu; Duan, Luming

    2017-01-01

    The few-layer graphene quantum dot provides a promising platform for quantum computing with both spin and valley degrees of freedom. Gate-defined quantum dots in particular can avoid noise from edge disorders. In connection with the recent experimental efforts (Song et al 2016 Nano Lett . 16 6245), we investigate the bound state properties of trilayer graphene (TLG) quantum dots (QDs) through numerical simulations. We show that the valley degeneracy can be lifted by breaking the time reversal symmetry through the application of a perpendicular magnetic field. The spectrum under such a potential exhibits a transition from one group of Landau levels to another group, which can be understood analytically through perturbation theory. Our results provide insight into the transport property of TLG QDs, with possible applications to study of spin qubits and valleytronics in TLG QDs. (paper)

  2. Carrier-phonon interaction in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Seebeck, Jan

    2009-03-10

    In recent years semiconductor quantum dots have been studied extensively due to their wide range of possible applications, predominantly for light sources. For successful applications, efficient carrier scattering processes as well as a detailed understanding of the optical properties are of central importance. The aims of this thesis are theoretical investigations of carrier scattering processes in InGaAs/GaAs quantum dots on a quantum-kinetic basis. A consistent treatment of quasi-particle renormalizations and carrier kinetics for non-equilibrium conditions is presented, using the framework of non-equilibrium Green's functions. The focus of our investigations is the interaction of carriers with LO phonons. Important for the understanding of the scattering mechanism are the corresponding quasi-particle properties. Starting from a detailed study of quantum-dot polarons, scattering and dephasing processes are discussed for different temperature regimes. The inclusion of polaron and memory effects turns out to be essential for the description of the carrier kinetics in quantum-dot systems. They give rise to efficient scattering channels and the obtained results are in agreement with recent experiments. Furthermore, a consistent treatment of the carrier-LO-phonon and the carrier-carrier interaction is presented for the optical response of semiconductor quantum dots, both giving rise to equally important contributions to the dephasing. Beside the conventional GaAs material system, currently GaN based light sources are of high topical interest due to their wide range of possible emission frequencies. In this material additionally intrinsic properties like piezoelectric fields and strong band-mixing effects have to be considered. For the description of the optical properties of InN/GaN quantum dots a procedure is presented, where the material properties obtained from an atomistic tight-binding approach are combined with a many-body theory for non

  3. Incorporation of graphene in quantum dot sensitized solar cells based on ZnO nanorods.

    Science.gov (United States)

    Chen, Jing; Li, Chu; Eda, Goki; Zhang, Yan; Lei, Wei; Chhowalla, Manish; Milne, William I; Deng, Wei-Qiao

    2011-06-07

    We demonstrate a novel architecture of solar cell by incorporating graphene thin film in a quantum dot sensitized solar cell. Quantum dot sensitized nanorods with a graphene layer exhibited a 54.7% improvement comparing a quantum dot sensitized ZnO nanorods without graphene layer. A fill factor as high as ∼62% was also obtained.

  4. A triple quantum dot in a single-wall carbon nanotube

    DEFF Research Database (Denmark)

    Grove-Rasmussen, Kasper; Jørgensen, Henrik Ingerslev; Hayashi, T.

    2008-01-01

    A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams...

  5. Self-organized formation of quantum dots of a material on a substrate

    Science.gov (United States)

    Zhang, Zhenyu; Wendelken, John F.; Chang, Ming-Che; Pai, Woei Wu

    2001-01-01

    Systems and methods are described for fabricating arrays of quantum dots. A method for making a quantum dot device, includes: forming clusters of atoms on a substrate; and charging the clusters of atoms such that the clusters of atoms repel one another. The systems and methods provide advantages because the quantum dots can be ordered with regard to spacing and/or size.

  6. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    NARCIS (Netherlands)

    Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

    2016-01-01

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the

  7. Interaction of solitons with a string of coupled quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vijendra, E-mail: vsmedphysics@gmail.com; Swami, O. P., E-mail: omg1789@gmail.com; Nagar, A. K., E-mail: ajaya.nagar@gmail.com [Department of Physics, Govt. Dungar College, Bikaner, Rajasthan 334001 (India); Taneja, S., E-mail: sachintaneja9@gmail.com [Department of Radiotherapy, CHAF Bangalore, Karnataka 560007 (India)

    2016-05-06

    In this paper, we develop a theory for discrete solitons interaction with a string of coupled quantum dots in view of the local field effects. Discrete nonlinear Schrodinger (DNLS) equations are used to describe the dynamics of the string. Numerical calculations are carried out and results are analyzed with the help of matlab software. With the help of numerical solutions we demonstrate that in the quantum dots string, Rabi oscillations (RO) are self trapped into stable bright Rabi solitons. The Rabi oscillations in different types of nanostructures have potential applications to the elements of quantum logic and quantum memory.

  8. Universal parametric correlations of conductance peaks in quantum dots

    International Nuclear Information System (INIS)

    Alhassid, Y.; Attias, H.

    1996-01-01

    We compute the parametric correlation function of the conductance peaks in chaotic and weakly disordered quantum dots in the Coulomb blockade regime and demonstrate its universality upon an appropriate scaling of the parameter. For a symmetric dot we show that this correlation function is affected by breaking time-reversal symmetry but is independent of the details of the channels in the external leads. We derive a new scaling which depends on the eigenfunctions alone and can be extracted directly from the conductance peak heights. Our results are in excellent agreement with model simulations of a disordered quantum dot. copyright 1996 The American Physical Society

  9. Quantum computation with two-dimensional graphene quantum dots

    International Nuclear Information System (INIS)

    Li Jie-Sen; Li Zhi-Bing; Yao Dao-Xin

    2012-01-01

    We study an array of graphene nano sheets that form a two-dimensional S = 1/2 Kagome spin lattice used for quantum computation. The edge states of the graphene nano sheets are used to form quantum dots to confine electrons and perform the computation. We propose two schemes of bang-bang control to combat decoherence and realize gate operations on this array of quantum dots. It is shown that both schemes contain a great amount of information for quantum computation. The corresponding gate operations are also proposed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Overview of Stabilizing Ligands for Biocompatible Quantum Dot Nanocrystals

    Directory of Open Access Journals (Sweden)

    Aaron Clapp

    2011-11-01

    Full Text Available Luminescent colloidal quantum dots (QDs possess numerous advantages as fluorophores in biological applications. However, a principal challenge is how to retain the desirable optical properties of quantum dots in aqueous media while maintaining biocompatibility. Because QD photophysical properties are directly related to surface states, it is critical to control the surface chemistry that renders QDs biocompatible while maintaining electronic passivation. For more than a decade, investigators have used diverse strategies for altering the QD surface. This review summarizes the most successful approaches for preparing biocompatible QDs using various chemical ligands.

  11. Electric and Magnetic Interaction between Quantum Dots and Light

    DEFF Research Database (Denmark)

    Tighineanu, Petru

    The present thesis reports research on the optical properties of quantum dots by developing new theories and conducting optical measurements. We demonstrate experimentally singlephoton superradiance in interface-uctuation quantum dots by recording the temporal decay dynamics in conjunction......-diusion during the growth process. The small size of excitons leads to a small oscillator strength of about 10. These ndings are crosschecked by an analysis of the phonon-broadened spectra revealing a small exciton wavefunction. We conclude that engineering large excitons with giant oscillator strength remains...

  12. Design of Efficient Mirror Adder in Quantum- Dot Cellular Automata

    Science.gov (United States)

    Mishra, Prashant Kumar; Chattopadhyay, Manju K.

    2018-03-01

    Lower power consumption is an essential demand for portable multimedia system using digital signal processing algorithms and architectures. Quantum dot cellular automata (QCA) is a rising nano technology for the development of high performance ultra-dense low power digital circuits. QCA based several efficient binary and decimal arithmetic circuits are implemented, however important improvements are still possible. This paper demonstrate Mirror Adder circuit design in QCA. We present comparative study of mirror adder cells designed using conventional CMOS technique and mirror adder cells designed using quantum-dot cellular automata. QCA based mirror adders are better in terms of area by order of three.

  13. Clocked quantum-dot cellular automata shift register

    Science.gov (United States)

    Orlov, Alexei O.; Kummamuru, Ravi; Ramasubramaniam, R.; Lent, Craig S.; Bernstein, Gary H.; Snider, Gregory L.

    2003-06-01

    The quantum-dot cellular automata (QCA) computational paradigm provides a means to achieve ultimately low limits of power dissipation by replacing binary coding in currents and voltages with single-electron switching within arrays of quantum dots ("cells"). Clocked control over the cells allows the realization of power gain, memory and pipelining in QCA circuits. We present an experimental demonstration of a clocked QCA two-stage shift register (SR) and use it to mimic the operation of a multi-stage SR. Error-bit rates for binary switching operations in a metal tunnel junction device are experimentally investigated, and discussed for future molecular QCAs.

  14. Förster Resonance Energy Transfer between Quantum Dot Donors and Quantum Dot Acceptors

    Directory of Open Access Journals (Sweden)

    Kenny F. Chou

    2015-06-01

    Full Text Available Förster (or fluorescence resonance energy transfer amongst semiconductor quantum dots (QDs is reviewed, with particular interest in biosensing applications. The unique optical properties of QDs provide certain advantages and also specific challenges with regards to sensor design, compared to other FRET systems. The brightness and photostability of QDs make them attractive for highly sensitive sensing and long-term, repetitive imaging applications, respectively, but the overlapping donor and acceptor excitation signals that arise when QDs serve as both the donor and acceptor lead to high background signals from direct excitation of the acceptor. The fundamentals of FRET within a nominally homogeneous QD population as well as energy transfer between two distinct colors of QDs are discussed. Examples of successful sensors are highlighted, as is cascading FRET, which can be used for solar harvesting.

  15. Graphene quantum dots, graphene oxide, carbon quantum dots and graphite nanocrystals in coals

    Science.gov (United States)

    Dong, Yongqiang; Lin, Jianpeng; Chen, Yingmei; Fu, Fengfu; Chi, Yuwu; Chen, Guonan

    2014-06-01

    Six coal samples of different ranks have been used to prepare single-layer graphene quantum dots (S-GQDs). After chemical oxidation and a series of centrifugation separation, every coal could be treated into two fractions, namely, CoalA and CoalB. According to the characterization results of TEM, AFM, XRD, Raman and FTIR, CoalA was revealed to be mainly composed of S-GQDs, which have an average height of about 0.5 nm and an average plane dimension of about 10 nm. The obtained S-GQDs showed excitation-dependent fluorescence and excellent electrochemiluminescence. CoalB was found to be some other carbon-based nanomaterials (CNMs), including agglomerated GQDs, graphene oxide, carbon quantum dots and agglomerated carbon nanocrystals. Generally, low-ranked coals might be more suitable for the preparation of S-GQDs. The production yield of S-GQDs from the six investigated coals decreased from 56.30% to 14.66% when the coal rank increased gradually. In contrast, high-ranked coals had high production yield of CoalB and might be more suitable for preparing other CNMs that were contained in CoalB, although those CNMs were difficult to separate from each other in our experiment.Six coal samples of different ranks have been used to prepare single-layer graphene quantum dots (S-GQDs). After chemical oxidation and a series of centrifugation separation, every coal could be treated into two fractions, namely, CoalA and CoalB. According to the characterization results of TEM, AFM, XRD, Raman and FTIR, CoalA was revealed to be mainly composed of S-GQDs, which have an average height of about 0.5 nm and an average plane dimension of about 10 nm. The obtained S-GQDs showed excitation-dependent fluorescence and excellent electrochemiluminescence. CoalB was found to be some other carbon-based nanomaterials (CNMs), including agglomerated GQDs, graphene oxide, carbon quantum dots and agglomerated carbon nanocrystals. Generally, low-ranked coals might be more suitable for the preparation of

  16. Förster Resonance Energy Transfer between Quantum Dot Donors and Quantum Dot Acceptors

    Science.gov (United States)

    Chou, Kenny F.; Dennis, Allison M.

    2015-01-01

    Förster (or fluorescence) resonance energy transfer amongst semiconductor quantum dots (QDs) is reviewed, with particular interest in biosensing applications. The unique optical properties of QDs provide certain advantages and also specific challenges with regards to sensor design, compared to other FRET systems. The brightness and photostability of QDs make them attractive for highly sensitive sensing and long-term, repetitive imaging applications, respectively, but the overlapping donor and acceptor excitation signals that arise when QDs serve as both the donor and acceptor lead to high background signals from direct excitation of the acceptor. The fundamentals of FRET within a nominally homogeneous QD population as well as energy transfer between two distinct colors of QDs are discussed. Examples of successful sensors are highlighted, as is cascading FRET, which can be used for solar harvesting. PMID:26057041

  17. Fabrication of highly nonlinear germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots using atomization doping process and its optical nonlinearity.

    Science.gov (United States)

    Ju, Seongmin; Watekar, Pramod R; Han, Won-Taek

    2011-01-31

    Germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots (SQDs) in the core was fabricated by using the atomization process in modified chemical vapor deposition (MCVD) process. The absorption bands attributed to PbTe semiconductor quantum dots in the fiber core were found to appear at around 687 nm and 1055 nm. The nonlinear refractive index measured by the long-period fiber grating (LPG) pair method upon pumping with laser diode at 976.4 nm was estimated to be ~1.5 × 10(-16) m2/W.

  18. All-optical switch based on doped graphene quantum dots in a defect layer of a one-dimensional photonic crystal.

    Science.gov (United States)

    Sahrai, Mostafa; Abbasabadi, Majid

    2018-01-20

    We discuss the light pulse propagation in a one-dimensional photonic crystal doped by graphene quantum dots in a defect layer. The graphene quantum dots behave as a three-level quantum system and are driven by three coherent laser fields. It is shown that the group velocity of the transmitted and reflected pulses can be switched from subluminal to superluminal light propagation by adjusting the relative phase of the applied fields. Furthermore, it is found that by proper choice of the phase difference between applied fields, the weak probe field amplification is achieved through a one-dimensional photonic crystal. In this way, the result is simultaneous subluminal transmission and reflection.

  19. Dynamics and mechanisms of quantum dot nanoparticle cellular uptake

    Directory of Open Access Journals (Sweden)

    Telford William G

    2010-06-01

    Full Text Available Abstract Background The rapid growth of the nanotechnology industry and the wide application of various nanomaterials have raised concerns over their impact on the environment and human health. Yet little is known about the mechanism of cellular uptake and cytotoxicity of nanoparticles. An array of nanomaterials has recently been introduced into cancer research promising for remarkable improvements in diagnosis and treatment of the disease. Among them, quantum dots (QDs distinguish themselves in offering many intrinsic photophysical properties that are desirable for targeted imaging and drug delivery. Results We explored the kinetics and mechanism of cellular uptake of QDs with different surface coatings in two human mammary cells. Using fluorescence microscopy and laser scanning cytometry (LSC, we found that both MCF-7 and MCF-10A cells internalized large amount of QD655-COOH, but the percentage of endocytosing cells is slightly higher in MCF-7 cell line than in MCF-10A cell line. Live cell fluorescent imaging showed that QD cellular uptake increases with time over 40 h of incubation. Staining cells with dyes specific to various intracellular organelles indicated that QDs were localized in lysosomes. Transmission electron microscopy (TEM images suggested a potential pathway for QD cellular uptake mechanism involving three major stages: endocytosis, sequestration in early endosomes, and translocation to later endosomes or lysosomes. No cytotoxicity was observed in cells incubated with 0.8 nM of QDs for a period of 72 h. Conclusions The findings presented here provide information on the mechanism of QD endocytosis that could be exploited to reduce non-specific targeting, thereby improving specific targeting of QDs in cancer diagnosis and treatment applications. These findings are also important in understanding the cytotoxicity of nanomaterials and in emphasizing the importance of strict environmental control of nanoparticles.

  20. Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots.

    Science.gov (United States)

    Shamirzaev, T S; Abramkin, D S; Nenashev, A V; Zhuravlev, K S; Trojánek, F; Dzurnák, B; Malý, P

    2010-04-16

    Structures with self-assembled InAs quantum dots (QDs) embedded in an AlAs matrix have been studied by steady-state and transient photoluminescence. It has been shown that in contrast to InAs/GaAs QD systems carriers are mainly captured by quantum dots directly from the AlAs matrix, while transfer of carriers captured by the wetting layer far away from QDs to the QDs is suppressed. At low temperatures the carriers captured by the wetting layer are localized by potential fluctuations at the wetting layer interface, while at high temperatures the carriers are delocalized but captured by nonradiative centers located in the wetting layer.

  1. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Herzog, Bastian, E-mail: BHerzog@physik.tu-berlin.de; Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike [Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin (Germany); Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  2. Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

    International Nuclear Information System (INIS)

    Hernandez-Maldonado, D.; Herrera, M.; Sales, D.L.; Alonso-Gonzalez, P.; Gonzalez, Y.; Gonzalez, L.; Pizarro, J.; Galindo, P.L.; Molina, S.I.

    2010-01-01

    The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.

  3. Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Maldonado, D., E-mail: david.hernandez@uca.es [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Herrera, M.; Sales, D.L. [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Alonso-Gonzalez, P.; Gonzalez, Y.; Gonzalez, L. [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760 Tres Cantos, Madrid (Spain); Pizarro, J.; Galindo, P.L. [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Molina, S.I. [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain)

    2010-07-01

    The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.

  4. One- and two-phonon capture processes in quantum dots

    DEFF Research Database (Denmark)

    Magnúsdóttir, Ingibjörg; Uskov, Alexander; Bischoff, Svend

    2002-01-01

    Multiphonon capture processes are investigated theoretically and found to contribute efficiently to the carrier injection into quantum dots. It is shown that two-phonon capture contributes where single-phonon capture is energetically inhibited and can lead to electron capture times of a few...

  5. Single-charge tunneling in ambipolar silicon quantum dots

    NARCIS (Netherlands)

    Müller, Filipp

    2015-01-01

    Spin qubits in coupled quantum dots (QDs) are promising for future quantum information processing (QIP). A quantum bit (qubit) is the quantum mechanical analogon of a classical bit. In general, each quantum mechanical two-level system can represent a qubit. For the spin of a single charge carrier

  6. Modelling exciton–phonon interactions in optically driven quantum dots

    DEFF Research Database (Denmark)

    Nazir, Ahsan; McCutcheon, Dara

    2016-01-01

    We provide a self-contained review of master equation approaches to modelling phonon effects in optically driven self-assembled quantum dots. Coupling of the (quasi) two-level excitonic system to phonons leads to dissipation and dephasing, the rates of which depend on the excitation conditions...

  7. Semiconductor quantum dot amplifiers for optical signal processing

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Uskov, A. V.; Bischoff, Svend

    2001-01-01

    The dynamics of quantum dot semiconductor amplifiers are investigated theoretically with respect to the potential for ultrafast signal processing. The high-speed signal processing capacity of these devices is found to be limited by the wetting layer dynamics in case of electrical pumping, while...... optical pumping partly removes this limitation. Also, the possibility of using spectral hole burning for signal processing is discussed....

  8. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  9. Quantum Dots for Live Cell and In Vivo Imaging

    Directory of Open Access Journals (Sweden)

    Jason R. E. Shepard

    2009-02-01

    Full Text Available In the past few decades, technology has made immeasurable strides to enable visualization, identification, and quantitation in biological systems. Many of these technological advancements are occurring on the nanometer scale, where multiple scientific disciplines are combining to create new materials with enhanced properties. The integration of inorganic synthetic methods with a size reduction to the nano-scale has lead to the creation of a new class of optical reporters, called quantum dots. These semiconductor quantum dot nanocrystals have emerged as an alternative to organic dyes and fluorescent proteins, and are brighter and more stable against photobleaching than standard fluorescent indicators. Quantum dots have tunable optical properties that have proved useful in a wide range of applications from multiplexed analysis such as DNA detection and cell sorting and tracking, to most recently demonstrating promise for in vivo imaging and diagnostics. This review provides an in-depth discussion of past, present, and future trends in quantum dot use with an emphasis on in vivo imaging and its related applications.

  10. Field-emission from quantum-dot-in-perovskite solids.

    Science.gov (United States)

    García de Arquer, F Pelayo; Gong, Xiwen; Sabatini, Randy P; Liu, Min; Kim, Gi-Hwan; Sutherland, Brandon R; Voznyy, Oleksandr; Xu, Jixian; Pang, Yuangjie; Hoogland, Sjoerd; Sinton, David; Sargent, Edward

    2017-03-24

    Quantum dot and well architectures are attractive for infrared optoelectronics, and have led to the realization of compelling light sensors. However, they require well-defined passivated interfaces and rapid charge transport, and this has restricted their efficient implementation to costly vacuum-epitaxially grown semiconductors. Here we report solution-processed, sensitive infrared field-emission photodetectors. Using quantum-dots-in-perovskite, we demonstrate the extraction of photocarriers via field emission, followed by the recirculation of photogenerated carriers. We use in operando ultrafast transient spectroscopy to sense bias-dependent photoemission and recapture in field-emission devices. The resultant photodiodes exploit the superior electronic transport properties of organometal halide perovskites, the quantum-size-tuned absorption of the colloidal quantum dots and their matched interface. These field-emission quantum-dot-in-perovskite photodiodes extend the perovskite response into the short-wavelength infrared and achieve measured specific detectivities that exceed 10 12 Jones. The results pave the way towards novel functional photonic devices with applications in photovoltaics and light emission.

  11. Surface processes during purification of InP quantum dots

    Directory of Open Access Journals (Sweden)

    Natalia Mordvinova

    2014-08-01

    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  12. Fractional decay of quantum dots in real photonic crystals

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst; Koenderink, A. Femius; Lodahl, Peter

    2008-01-01

    We show that fractional decay may be observable in experiments using quantum dots and photonic crystals with parameters that are currently achievable. We focus on the case of inverse opal photonic crystals and locate the position in the crystal where the effect is most pronounced. Furthermore, we...

  13. Electron Energy Level Statistics in Graphene Quantum Dots

    NARCIS (Netherlands)

    De Raedt, H.; Katsnellson, M. I.; Katsnelson, M.I.

    2008-01-01

    Motivated by recent experimental observations of size quantization of electron energy levels in graphene quantum dots [7] we investigate the level statistics in the simplest tight-binding model for different dot shapes by computer simulation. The results are in a reasonable agreement with the

  14. Ultrafast gain and index dynamics in quantum dot amplifiers

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Mørk, Jesper

    1999-01-01

    The ultrafast dynamics of gain and refractive index in an InAs/GaAs quantum dot amplifier are investigated at room temperature. The gain is observed to recover with a 90 fs time constant, ruling out problems of slow carrier capture into the dots, and making this component promising for high...

  15. Quantum photonics with quantum dots in photonic wires

    DEFF Research Database (Denmark)

    Munsch, Mathieu; Kuhlmann, Andreas; Cadeddu, Davide

    2016-01-01

    We present results from the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter’s properties with the highest sensitivity. Weperform...

  16. Quantum optics with quantum dots in photonic wires

    DEFF Research Database (Denmark)

    Munsch, Mathieu; Cadeddu, Davide; Teissier, Jean

    2016-01-01

    We present an exploration of the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter's properties with the highest sensitivity, allowing...

  17. Peptide-mediated intracellular delivery of quantum dots

    DEFF Research Database (Denmark)

    Lagerholm, B Christoffer

    2007-01-01

    Quantum dots (QDs) have received a great amount of interest for use as fluorescent labels in biological applications. QDs are brightly fluorescent and very photostable, satisfying even imaging applications that require single molecule detection at high repetition rates over long periods of time...

  18. Quantum Dots Embedded in Graphene Nanoribbons by Chemical Substitution

    DEFF Research Database (Denmark)

    Carbonell-Sanroma, Eduard; Brandimarte, Pedro; Balog, Richard

    2017-01-01

    Bottom-up chemical reactions of selected molecular precursors on a gold surface can produce high quality graphene nanoribbons (GNRs). Here, we report on the formation of quantum dots embedded in an armchair GNR by substitutional inclusion of pairs of boron atoms into the GNR backbone. The boron...

  19. Multi-Color Single Particle Tracking with Quantum Dots

    DEFF Research Database (Denmark)

    Christensen, Eva Arnspang; Brewer, J. R.; Lagerholm, B. C.

    2012-01-01

    Quantum dots (QDs) have long promised to revolutionize fluorescence detection to include even applications requiring simultaneous multi-species detection at single molecule sensitivity. Despite the early promise, the unique optical properties of QDs have not yet been fully exploited in e. g...

  20. Thermoelectric effects in molecular quantum dots with contacts

    Czech Academy of Sciences Publication Activity Database

    Koch, T.; Loos, Jan; Fehske, H.

    2014-01-01

    Roč. 89, č. 15 (2014), "155133-1"-"155133-11" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : theory of electronic transport * scattering mechanisms * polarons and electron-phonon interactions * quantum dots Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  1. Theory of coherent dynamic nuclear polarization in quantum dots

    DEFF Research Database (Denmark)

    Neder, Izhar; Rudner, Mark Spencer; Halperin, Bertrand

    2014-01-01

    We consider the production of dynamic nuclear spin polarization (DNP) in a two-electron double quantum dot, in which the electronic levels are repeatedly swept through a singlet-triplet avoided crossing. Our analysis helps to elucidate the intriguing interplay between electron-nuclear hyperfine...

  2. Anomalous temperature dependence of excitation transfer between quantum dots

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2015-01-01

    Roč. 7, č. 4 (2015), 325-330 ISSN 2164-6627 R&D Projects: GA MŠk(CZ) LD14011; GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : excitation transfer * quantum dots * temperature dependence * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism

  3. Dephasing in InAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang Werner; Mørk, Jesper

    1999-01-01

    The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning...

  4. THz Electro-absorption Effect in Quantum Dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Monozon, Boris S.; Livshits, Daniil A.

    2011-01-01

    In a THz pump - optical probe experiment we demonstrate an instantaneous electro-absorption effect in InGaAs/GaAs quantum dots, induced by the electric field of a single-cycle THz pulse with 3 THz bandwidth and with free-space peak electric field reaching 220 kV/cm. The transient modulation of QD...

  5. High resolution STEM of quantum dots and quantum wires

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima

    2013-01-01

    This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...

  6. Spontaneous emission of quantum dots in disordered photonic crystal waveguides

    DEFF Research Database (Denmark)

    Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

    2010-01-01

    We report on the enhancement of the spontaneous emission rate of single semiconductor quantum dots embedded in a photonic crystal waveguide with engineered disorder. Random high-Q cavities, that are signature of Anderson localization, are measured in photoluminescence experiments and appear in th...

  7. Magnetic anisotropies of quantum dots doped with magnetic ions

    Czech Academy of Sciences Publication Activity Database

    Výborný, Karel; Han, J.E.; Oszwałdowski, R.; Žutić, I.; Petukhov, A.G.

    2012-01-01

    Roč. 85, č. 15 (2012), "155312-1"-"155312-8" ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : magnetocrystalline anisotropy * quantum dot s * dilute magnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.767, year: 2012

  8. Ultrafast Terahertz Dynamics and Switching in Quantum Dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2012-01-01

    In this Chapter we describe the experimental studies of ultrafast carrier dynamics and all-optical switching in semiconductor quantum dots (QDs) using ultrafast terahertz (THz) techniques. In the first part of this chapter we describe the studies of carrier capture into the QDs, and thermionic...

  9. Quantum dots trace lymphatic drainage from the mouse eye

    Science.gov (United States)

    Tam, Alex L. C.; Gupta, Neeru; Zhang, Zhexue; Yücel, Yeni H.

    2011-10-01

    Glaucoma is a leading cause of blindness in the world, often associated with elevated eye pressure. Currently, all glaucoma treatments aim to lower eye pressure by improving fluid exit from the eye. We recently reported the presence of lymphatics in the human eye. The lymphatic circulation is known to drain fluid from organ tissues and, as such, lymphatics may also play a role in draining fluid from the eye. We investigated whether lymphatic drainage from the eye is present in mice by visualizing the trajectory of quantum dots once injected into the eye. Whole-body hyperspectral fluorescence imaging was performed in 17 live mice. In vivo imaging was conducted prior to injection, and 5, 20, 40 and 70 min, and 2, 6 and 24 h after injection. A quantum dot signal was observed in the left neck region at 6 h after tracer injection into the eye. Examination of immunofluorescence-labelled sections using confocal microscopy showed the presence of a quantum dot signal in the left submandibular lymph node. This is the first direct evidence of lymphatic drainage from the mouse eye. The use of quantum dots to image this lymphatic pathway in vivo is a novel tool to stimulate new treatments to reduce eye pressure and prevent blindness from glaucoma.

  10. Ultrafast Dynamics of Quantum-Dot Semiconductor Optical Amplifiers

    DEFF Research Database (Denmark)

    Poel, Mike van der; Hvam, Jørn Märcher

    2007-01-01

    We report on a series of experiments on the dynamical properties of quantum-dot semiconductor optical amplifiers. We show how the amplifier responds to one or several ultrafast (170 fs) pulses in rapid succession and our results demonstrate applicability and ultimate limitations to application...

  11. Site-controlled quantum dots coupled to photonic crystal waveguides

    DEFF Research Database (Denmark)

    Rigal, B.; de Lasson, Jakob Rosenkrantz; Jarlov, C.

    2016-01-01

    We demonstrate selective optical coupling of multiple, site controlled semiconductor quantum dots (QDs) to photonic crystal waveguide structures. The impact of the exact position and emission spectrum of the QDs on the coupling efficiency is elucidated. The influence of optical disorder and end...

  12. Exchange cotunneling through quantum dots with spin-orbit coupling

    DEFF Research Database (Denmark)

    Paaske, Jens; Andersen, Andreas; Flensberg, Karsten

    2010-01-01

    We investigate the effects of spin-orbit interaction (SOI) on the exchange cotunneling through a spinful Coulomb blockaded quantum dot. In the case of zero magnetic field, Kondo effect is shown to take place via a Kramers doublet and the SOI will merely affect the Kondo temperature. In contrast, we...

  13. Tuning Single Quantum Dot Emission with a Micromirror.

    Science.gov (United States)

    Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

    2018-02-14

    The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

  14. Efficient eco-friendly inverted quantum dot sensitized solar cells

    NARCIS (Netherlands)

    Park, Jinhyung; Sajjad, Muhammad T.; Jouneau, Pierre-Henri; Ruseckas, Arvydas; Faure-Vincent, Jérôme; Samuel, Ifor D. W.; Reiss, Peter; Aldakov, Dmitry

    2016-01-01

    Recent progress in quantum dot (QD) sensitized solar cells has demonstrated the possibility of low-cost and efficient photovoltaics. However, the standard device structure based on n-type materials often suffers from slow hole injection rate, which may lead to unbalanced charge transport. We have

  15. On dephasing and spin decay in open quantum dots

    NARCIS (Netherlands)

    Michaelis, Björn Dieter

    2006-01-01

    The thesis contains three topics on transport in nanostructres. Chpt. 2 explains the loss of entanglement in electronic pairs that enter chaotic quantum dots. The quantitiy that is affected are timedependent and spaceresolving current measurements. Looking at statisticcs dots, it is discovered

  16. Multiple Exciton Generation in Quantum Dot Solar Cells

    Science.gov (United States)

    Semonin, O. E.

    Photovoltaics are limited in their power conversion efficiency (PCE) by very rapid relaxation of energetic carriers to the band edge. Therefore, photons from the visible and ultraviolet parts of the spectrum typically are not efficiently converted into electrical energy. One approach that can address this is multiple exciton generation (MEG), where a single photon of sufficient energy can generate multiple excited electron-hole pairs. This process has been shown to be more efficient in quantum dots than bulk semiconductors, but it has never been demonstrated in the photocurrent of a solar cell. In order to demonstrate that multiple exciton generation can address fundamental limits for conventional photovoltaics, I have developed prototype devices from colloidal PbS and PbSe quantum dot inks. I have characterized both the colloidal suspensions and films of quantum dots with the goal of understanding what properties determine the efficiency of the solar cell and of the MEG process. I have found surface chemistry effects on solar cells, photoluminescence, and MEG, and I have found some chemical treatments that lead to solar cells showing MEG. These devices show external quantum efficiency (EQE) greater than 100% for certain parts of the solar spectrum, and I extract internal quantum efficiency (IQE) consistent with previous measurements of colloidal suspensions of quantum dots. These findings are a small first step toward breaking the single junction Shockley-Queisser limit of present-day first and second generation solar cells, thus moving photovoltaic cells toward a new regime of efficiency.

  17. Transport through a vibrating quantum dot: Polaronic effects

    Czech Academy of Sciences Publication Activity Database

    Koch, T.; Loos, Jan; Alvermann, A.; Bishop, A. R.; Fehske, H.

    2010-01-01

    Roč. 220, č. 1 (2010), 012014/1-012014/9 ISSN 1742-6588 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dot, * polaronic effects * low-temperature transport properties Subject RIV: BM - Solid Matter Physics ; Magnetism

  18. Quantum dots trace lymphatic drainage from the mouse eye

    Energy Technology Data Exchange (ETDEWEB)

    Tam, Alex L C; Gupta, Neeru; Zhang Zhexue; Yuecel, Yeni H, E-mail: yucely@smh.ca [Department of Ophthalmology and Vision Sciences, University of Toronto, M5T 2S8 (Canada)

    2011-10-21

    Glaucoma is a leading cause of blindness in the world, often associated with elevated eye pressure. Currently, all glaucoma treatments aim to lower eye pressure by improving fluid exit from the eye. We recently reported the presence of lymphatics in the human eye. The lymphatic circulation is known to drain fluid from organ tissues and, as such, lymphatics may also play a role in draining fluid from the eye. We investigated whether lymphatic drainage from the eye is present in mice by visualizing the trajectory of quantum dots once injected into the eye. Whole-body hyperspectral fluorescence imaging was performed in 17 live mice. In vivo imaging was conducted prior to injection, and 5, 20, 40 and 70 min, and 2, 6 and 24 h after injection. A quantum dot signal was observed in the left neck region at 6 h after tracer injection into the eye. Examination of immunofluorescence-labelled sections using confocal microscopy showed the presence of a quantum dot signal in the left submandibular lymph node. This is the first direct evidence of lymphatic drainage from the mouse eye. The use of quantum dots to image this lymphatic pathway in vivo is a novel tool to stimulate new treatments to reduce eye pressure and prevent blindness from glaucoma.

  19. Imaging electrostatically confined Dirac fermions in graphene quantum dots

    Science.gov (United States)

    Lee, Juwon; Wong, Dillon; Velasco, Jairo, Jr.; Rodriguez-Nieva, Joaquin F.; Kahn, Salman; Tsai, Hsin-Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Levitov, Leonid S.; Crommie, Michael F.

    2016-11-01

    Electrostatic confinement of charge carriers in graphene is governed by Klein tunnelling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at p-n junction boundaries. Reflection and transmission at these boundaries affect the quantum interference of electronic waves, enabling the formation of novel quasi-bound states. Here we report the use of scanning tunnelling microscopy to map the electronic structure of Dirac fermions confined in quantum dots defined by circular graphene p-n junctions. The quantum dots were fabricated using a technique involving local manipulation of defect charge within the insulating substrate beneath a graphene monolayer. Inside such graphene quantum dots we observe resonances due to quasi-bound states and directly visualize the quantum interference patterns arising from these states. Outside the quantum dots Dirac fermions exhibit Friedel oscillation-like behaviour. Bolstered by a theoretical model describing relativistic particles in a harmonic oscillator potential, our findings yield insights into the spatial behaviour of electrostatically confined Dirac fermions.

  20. THz quantum-confined Stark effect in semiconductor quantum dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Monozon, Boris S.; Livshits, Daniil A.

    2012-01-01

    We demonstrate an instantaneous all-optical manipulation of optical absorption at the ground state of InGaAs/GaAs quantum dots (QDs) via a quantum-confined Stark effect (QCSE) induced by the electric field of incident THz pulses with peak electric fields reaching 200 kV/cm in the free space...

  1. Application of zinc oxide quantum dots in food safety

    Science.gov (United States)

    Zinc oxide quantum dots (ZnO QDs) are nanoparticles of purified powdered ZnO. The ZnO QDs were directly added into liquid foods or coated on the surface of glass jars using polylactic acid (PLA) as a carrier. The antimicrobial activities of ZnO QDs against Listeria monocytogenes, Salmonella Enteriti...

  2. Suppression of LO phonon scattering in Landau quantized quantum dots

    NARCIS (Netherlands)

    Murdin, B. N.; Hollingworth, A. R.; Kamal-Saadi, M.; Kotitschke, R. T.; Ciesla, C. M.; Pidgeon, C. R.; Findlay, P. C.; Pellemans, H. P. M.; Langerak, Cjgm; Rowe, A. C.; Stradling, R. A.; Gornik, E.

    1999-01-01

    Picosecond time-resolved far-infrared measurements are presented of the scattering between conduction-band states in a doped quasi quantum dot. These states are created by the application of a magnetic field along the growth direction of an InAs/AlSb quantum well. A clear suppression of the cooling

  3. Study of Streptavidin-Modified Quantum Dots by Capillary Electrophoresis

    Czech Academy of Sciences Publication Activity Database

    Stanisavljevic, M.; Janů, L.; Šmerková, K.; Křížková, S.; Pizúrová, Naděžda; Ryvolová, M.; Adam, V.; Hubálek, J.; Kizek, R.

    2013-01-01

    Roč. 76, 7-8 (2013), s. 335-343 ISSN 0009-5893 Institutional support: RVO:68081723 Keywords : Capillary electrophoresis * Gel electrophoresis * Avidin-biotin technology * Oligonucleotide * Nanoparticle * quantum dots Subject RIV: CE - Biochemistry Impact factor: 1.370, year: 2013

  4. Slow light in quantum dot photonic crystal waveguides

    DEFF Research Database (Denmark)

    Nielsen, Torben Roland; Lavrinenko, Andrei; Mørk, Jesper

    2009-01-01

    A theoretical analysis of pulse propagation in a semiconductor quantum dot photonic crystal waveguide in the regime of electromagnetically induced transparency is presented. The slow light mechanism considered here is based on both material and waveguide dispersion. The group index n...

  5. Correlated Coulomb drag in capacitively coupled quantum-dot structures

    DEFF Research Database (Denmark)

    Kaasbjerg, Kristen; Jauho, Antti-Pekka

    2016-01-01

    We study theoretically Coulomb drag in capacitively coupled quantum dots (CQDs) -- a biasdriven dot coupled to an unbiased dot where transport is due to Coulomb mediated energy transfer drag. To this end, we introduce a master-equation approach which accounts for higher-order tunneling (cotunneling...

  6. Surface defect assisted broad spectra emission from CdSe quantum dots for white LED application

    Science.gov (United States)

    Samuel, Boni; Mathew, S.; Anand, V. R.; Correya, Adrine Antony; Nampoori, V. P. N.; Mujeeb, A.

    2018-02-01

    This paper reports, broadband photoluminescence from CdSe quantum dots (QDs) under the excitation of 403 nm using fluorimeter and 403 nm CW laser excitation. The broad spectrum obtained from the colloidal quantum dots was ranges from 450 nm to 800 nm. The broadness of the spectra was attributed to the merging of band edge and defect driven emissions from the QDs. Six different sizes of particles were prepared via kinetic growth method by using CdO and elemental Se as sources of Cd and Se respectively. The particle sizes were measured from TEM images. The size dependent effect on broad emission was also studied and the defect state emission was found to be predominant in very small QDs. The defect driven emission was also observed to be redshifted, similar to the band edge emission, due to quantum confinement effect. The emission corresponding to different laser power was also studied and a linear relation was obtained. In order to study the colour characteristics of the emission, CIE chromaticity coordinate, CRI and CCT of the prepared samples were measured. It is observed that, these values were tunable by the addition of suitable intensity of blue light from the excitation source to yield white light of various colour temperatures. The broad photoluminescence spectrum of the QDs, were compared with that of a commercially available white LED. It was found that the prepared QDs are good alternatives for the phosphor in phosphor converted white LEDs, to provide good spectral tunability.

  7. Peptide-Conjugated Quantum Dots Act as the Target Marker for Human Pancreatic Carcinoma Cells

    Directory of Open Access Journals (Sweden)

    Shuang-ling Li

    2016-03-01

    Full Text Available Background/Aims: In the present study, we describe a novel and straightforward approach to produce a cyclic- arginine-glycine-aspartic (RGD-peptide-conjugated quantum dot (QD probe as an ideal target tumor biomarker. Due to its specific structure, the probe can be used for targeted imaging of pancreatic carcinoma cells. Methods: Pancreatic carcinoma cells were routinely cultured and marked with QD-RGD probe. The QD-RGD probe on the fluorescence-labeled cancer cell was observed by fluorescence microscopy and laser confocal microscopy. Cancer cell viability was detected by MTT assay after culturing with QD-RGD probe. Results: Fluorescence microscopy and laser confocal microscopy displayed that 10nmol/L QD-RGD probe was able to effectively mark pancreatic carcinoma cells. In comparison with organic dyes and fluorescent proteins, the quantum dot-RGD probe had unique optical and electronic properties. Conclusion: QD-RGD probe has a low cytotoxicity with an excellent optical property and biocompatibility. These findings support further evaluation of QD-RGD probes for the early detection of pancreatic cancer.

  8. Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Egorov, A.Yu. [Infineon Technologies, Corporate Research Photonics, Muenchen (Germany); Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation); Bedarev, D. [Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation); Bernklau, D.; Riechert, H. [Infineon Technologies, Corporate Research Photonics, Muenchen (Germany); Dumitras, G. [Technical Univ. of Munich, Garching (Germany). Dept. of Physics E16

    2001-04-01

    Self-assembled InAs quantum dots (QDs) are fabricated in In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} and In{sub 0.06}Ga{sub 0.94}As{sub 0.98}N{sub 0.02} matrices on GaAs by solid source molecular beam epitaxy. The influence of InAs average layer thickness and matrix material on photoluminescence properties are studied. We observe a photoluminescence peak wavelength up to 1.49 {mu}m from structures with a nominal InAs thickness of four monolayers (ML). For QD structures emitting at 1.3 {mu}m, no saturation of ground state luminescence and no excited state photoluminescence are detected. This should lead to an improved performance of 1.3 {mu}m quantum dot lasers on GaAs. (orig.)

  9. Quantum Dot Nanobioelectronics and Selective Antimicrobial Redox Interventions

    Science.gov (United States)

    Goodman, Samuel Martin

    The unique properties of nanomaterials have engendered a great deal of interest in applying them for applications ranging from solid state physics to bio-imaging. One class of nanomaterials, known collectively as quantum dots, are defined as semiconducting crystals which have a characteristic dimension smaller than the excitonic radius of the bulk material which leads to quantum confinement effects. In this size regime, excited charge carriers behave like prototypical particles in a box, with their energy levels defined by the dimensions of the constituent particle. This is the source of the tunable optical properties which have drawn a great deal of attention with regards to finding appropriate applications for these materials. This dissertation is divided into multiple sections grouped by the type of application explored. The first sectoin investigates the energetic interactions of physically-coupled quantum dots and DNA, with the goal of gaining insight into how self-assembled molecular wires can bridge the energetic states of physically separated nanocrystals. Chapter 1 begins with an introduction to the properties of quantum dots, the conductive properties of DNA, and the common characterization methods used to characterize materials on the nanoscale. In Chapter 2 scanning tunneling measurements of QD-DNA constructs on the single particle level are presented which show the tunable coupling between the two materials and their resulting hybrid electronic structure. This is expanded upon in Chapter 3 where the conduction of photogenerated charges in QD-DNA hybrid thin films are characterized, which exhibit different charge transfer pathways through the constituent nucleobases depending on the energy of the incident light and resulting electrons. Complementary investigations of energy transfer mediated through DNA are presented in Chapter 4, with confirmation of Dexter-like transfer being facilitated through the oligonucleotides. The second section quantifies the

  10. Ultrafast optical control of individual quantum dot spin qubits

    International Nuclear Information System (INIS)

    De Greve, Kristiaan; Press, David; McMahon, Peter L; Yamamoto, Yoshihisa

    2013-01-01

    Single spins in semiconductor quantum dots form a promising platform for solid-state quantum information processing. The spin-up and spin-down states of a single electron or hole, trapped inside a quantum dot, can represent a single qubit with a reasonably long decoherence time. The spin qubit can be optically coupled to excited (charged exciton) states that are also trapped in the quantum dot, which provides a mechanism to quickly initialize, manipulate and measure the spin state with optical pulses, and to interface between a stationary matter qubit and a ‘flying’ photonic qubit for quantum communication and distributed quantum information processing. The interaction of the spin qubit with light may be enhanced by placing the quantum dot inside a monolithic microcavity. An entire system, consisting of a two-dimensional array of quantum dots and a planar microcavity, may plausibly be constructed by modern semiconductor nano-fabrication technology and could offer a path toward chip-sized scalable quantum repeaters and quantum computers. This article reviews the recent experimental developments in optical control of single quantum dot spins for quantum information processing. We highlight demonstrations of a complete set of all-optical single-qubit operations on a single quantum dot spin: initialization, an arbitrary SU(2) gate, and measurement. We review the decoherence and dephasing mechanisms due to hyperfine interaction with the nuclear-spin bath, and show how the single-qubit operations can be combined to perform spin echo sequences that extend the qubit decoherence from a few nanoseconds to several microseconds, more than 5 orders of magnitude longer than the single-qubit gate time. Two-qubit coupling is discussed, both within a single chip by means of exchange coupling of nearby spins and optically induced geometric phases, as well as over longer-distances. Long-distance spin–spin entanglement can be generated if each spin can emit a photon that is

  11. Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

    Science.gov (United States)

    Forrest, Stephen R.

    2008-08-19

    A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

  12. Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin

    Science.gov (United States)

    2011-01-01

    Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633

  13. Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

    International Nuclear Information System (INIS)

    You, Jie; Li, Hai-Ou; Wang, Ke; Cao, Gang; Song, Xiang-Xiang; Xiao, Ming; Guo, Guo-Ping

    2015-01-01

    To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction

  14. AlGaInP quantum dots for optoelectronic applications in the visible spectral range; AlGaInP-Quantenpunkte fuer optoelektronische Anwendungen im sichtbaren Spektralbereich

    Energy Technology Data Exchange (ETDEWEB)

    Gerhard, Sven

    2013-01-10

    The scope of this work is the fabrication and characterization of AlGaInP quantum dots on GaP an GaAs substrates. Based on such quantum dots, semiconductor lasers have been realized, emitting between 660 nm and 730 nm at room temperature. The examination of broad-area lasers processed on these structures suggests that active layers of larger quantum dots with higher aluminium contents lead to lasers with better performance at similar emission wavelength. Additionally, quantum dots grown on GaP substrates have been characterized, that were embedded in AlGaP barriers. Since these barriers exhibit an indirect bandgap, a non-trivial band alignment within these structures is expected. In this work, numerical 3D-simulations are employed to calculate the band alignment including strain and internal fields. Also, ground state wavefunctions of charge carriers have been determined. A thorough comparison between theory and experiment connects the measured emission wavelength and luminescence intensities with calculated transition energies and wavefunction overlaps.

  15. Scintillation properties of quantum-dot doped styrene based plastic scintillators

    International Nuclear Information System (INIS)

    Park, J.M.; Kim, H.J.; Hwang, Y.S.; Kim, D.H.; Park, H.W.

    2014-01-01

    We fabricated quantum-dot doped plastic scintillators in order to control the emission wavelength. We studied the characterization of the quantum-dots (CdSe/ZnS) and PPO (2, 5-diphenyloxazole) doped styrene based plastic scintillators. PPO is usually used as a dopant to enhance the scintillation properties of organic scintillators with a maximum emission wavelength of 380 nm. In order to study the scintillation properties of the quantum-dots doped plastic scintillators, the samples were irradiated with X-ray, photon, and 45 MeV proton beams. We observed that only PPO doped plastic scintillators shows a luminescence peak around 380 nm. However, both the quantum-dots and PPO doped plastic scintillators shows luminescence peaks around 380 nm and 520 nm. Addition of quantum-dots had shifted the luminescence spectrum from 380 nm (PPO) toward the region of 520 nm (Quantum-dots). Emissions with wavelength controllable plastic scintillators can be matched to various kinds of photosensors such as photomultiplier tubes, photo-diodes, avalanche photo-diodes, and CCDs, etc. Also quantum-dots doped plastic scintillator, which is irradiated 45 MeV proton beams, shows that the light yield of quantum-dots doped plastic scintillator is increases as quantum-dots doping concentration increases at 520 nm. And also the plastic scintillators were irradiated with Cs-137 γ-ray for measuring fluorescence decay time. -- Highlights: • Quantum-dot doped plastic scintillator is grown by the thermal polymerization method. • Quantum-dot doped plastic scintillators can control the emission wavelength to match with photo-sensor. • Quantum-dots and PPO doped plastic scintillators emitted luminescence peaks around 380 nm and 520 nm. • We observed the energy transfer from PPO to quantum-dot in the quantum-dot doped plastic scintillator

  16. Post-Growth Intermixing of GaAs Based Quantum Dot Devices

    Science.gov (United States)

    Zhang, Ziyang; Hogg, R. A.

    Post-growth intermixing is a powerful technique currently applied in areas such as high power laser arrays and photonics integrated circuits. The application of this technique to quantum dot (QD) based laser materials is of significant interest offering new types of device and allows large-scale integrated devices, but brings about new challenges. In this paper, we will initially review quantum well (QW) intermixing processes and applications and move on to describe specific differences between QW and QD based materials and review the literature on various forms of QD intermixing. Structural and spectroscopic studies of intermixed QD materials will be discussed, and the importance of modulation p-doping of structures will be highlighted. We will then go on to describe active intermixed QD devices including both lasers and broadband devices such as super luminescent diodes and amplifiers, and conclude with our latest results on selective area intermixed devices.

  17. Influences of a Side-Coupled Triple Quantum Dot on Kondo Transport Through a Quantum Dot

    International Nuclear Information System (INIS)

    Jiang Zhaotan; Yang Yannan; Qin Zhijie

    2010-01-01

    Kondo transport properties through a Kondo-type quantum dot (QD) with a side-coupled triple-QD structure are systematically investigated by using the non-equilibrium Green's function method. We firstly derive the formulae of the current, the linear conductance, the transmission coefficient, and the local density of states. Then we carry out the analytical and numerical studies and some universal conductance properties are obtained. It is shown that the number of the conductance valleys is intrinsically determined by the side-coupled QDs and at most equal to the number of the QDs included in the side-coupled structure in the asymmetric limit. In the process of forming the conductance valleys, the side-coupled QD system plays the dominant role while the couplings between the Kondo-type QD and the side-coupled structure play the subsidiary and indispensable roles. To testify the validity of the universal conductance properties, another different kinds of side-coupled triple-QD structures are considered. It should be emphasized that these universal properties are applicable in understanding this kind of systems with arbitrary many-QD side structures.

  18. Preparation of Graphene Quantum Dots and Their Application in Cell Imaging

    Directory of Open Access Journals (Sweden)

    Jie Zhang

    2016-01-01

    Full Text Available Objective. This study aims to increase the fluorescence quantum yield by improving the conditions of preparing graphene quantum dots (GQDs through the solvothermal route and observe the GQDs performance in imaging oral squamous cells. Methodology. The following experimental conditions of GQDs preparation through the solvothermal route were improved: graphene oxide (GO/N-N dimethyl formamide (DMF ratio, filling percentage, and reaction time. A fluorescence spectrophotometer was used to measure photoluminescence, and the peak values were compared. Methylthiazolyldiphenyl-tetrazolium (MTT bromide was used to detect the cytotoxicity of GQDs, which was compared with that of cadmium telluride quantum dots (CdTe QDs. GQDs were cultured with tongue cancer cells. After the coculture, a laser scanning confocal microscope (LSCM was used to observe cell imaging. Results. The optimal conditions of GQD preparation through the solvothermal route included the following: 10 mg/mL GO/DMF ratio, 80% filling percentage, 12 h reaction time, and 17.4% fluorescence quantum yield. As the cell concentration increased, the GQD and CdTe QD groups exhibited a decreasing cell survival rate, with the decrease in the CdTe QD group being more significant. The LSCM observations showed bright green fluorescence images. Conclusion. The improved experimental conditions increased the fluorescence quantum yield of GQDs. In this study, the prepared GQDs exhibited low cytotoxicity level and satisfactory cell imaging performance.

  19. Color tunable hybrid light-emitting diodes based on perovskite quantum dot/conjugated polymer

    Science.gov (United States)

    Germino, José C.; Yassitepe, Emre; Freitas, Jilian N.; Santiago, Glauco M.; Bonato, Luiz Gustavo; de Morais, Andréia; Atvars, Teresa D. Z.; Nogueira, Ana F.

    2017-08-01

    Inorganic organic metal halide perovskite materials have been investigated for several technological applications, such as photovoltaic cells, lasers, photodetectors and light emitting diodes (LEDs), either in the bulk form or as colloidal nanoparticles. Recently, all inorganic Cesium Lead Halide (CsPbX3, X=Cl,Br, I) perovskite quantum dots (PQDs) were reported with high photoluminescence quantum yield with narrow emission lines in the visible wavelengths. Here, green-emitting perovskite quantum dots (PQDs) prepared by a synthetic method based on a mixture of oleylamine and oleic acid as surfactants were applied in the electroluminescent layer of hybrid LEDs in combination with two different conjugated polymers: polyvinylcarbazole (PVK) or poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). The performance of the diodes and the emission color tuning upon dispersion of different concentrations of the PQDs in the polymer matrix is discussed. The presented approach aims at the combination of the optical properties of the PQDs and their interaction with wide bandgap conjugated polymers, associated with the solution processing ability of these materials.

  20. Stimulated emission and lasing from all-inorganic perovskite quantum dots

    Science.gov (United States)

    Sun, Handong; Wang, Yue; Li, Xiaoming; Haibo, Zeng

    We present superior optical gain and lasing properties in a new class of emerging quantum materials, the colloidal all-inorganic cesium lead halide perovskite quantum dots (IPQDs) (CsPbX3, X = Cl, Br, I). Our result has indicated that such material system show combined merits of both colloidal quantum dots and halide perovskites. Low-threshold and ultrastable stimulated emission was demonstrated under atmospheric condition. The flexibility and advantageous optical gain properties of these CsPbX3 IPQDs were manifested by demonstration of an optically pumped micro-laser. The nonlinear optical properties including the multi-photon absorption and resultant photoluminescence of the CsPbX3 nanocrystals were investigated. A large two-photon absorption cross-section of up to ~1.2×105 GM is determined from 9 nm-sized CsPbBr3 nanocrystals. Moreover, low-threshold frequency-upconverted stimulated emission by two-photon absorption was observed from the thin films of close-packed CsPbBr3 nanocrystals. We further realize the three-photon pumped stimulated emission in green spectra range from colloidal IPQD.

  1. Synthesis and Characterization of Mercaptoacetic Acid Capped Cadmium Sulphide Quantum Dots.

    Science.gov (United States)

    Wageh, S; Maize, Mai; Donia, A M; Al-Ghamdi, Ahmed A; Umar, Ahmad

    2015-12-01

    This paper reports the facile synthesis and detailed characterization of mercaptoacetic acid capped cadmium sulphide (CdS) quantum dots using various cadmium precursors. The mercaptoacetic acid capped CdS quantum dots were prepared by facile and simple wet chemical method and characterized by several techniques such as energy dispersive spectroscopy (EDS), X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, UV-vis. spectroscopy, photoluminescence spectroscopy, high-resolution transmission microscopy (HRTEM) and thremogravimetric analysis. The EDS studies revealed that the prepared quantum dots possess higher atomic percentage of sulfur compared to cadmium due to the coordination of thiolate to the quantum dots surfaces. The X-ray and absorption analyses exhibited that the size of quantum dots prepared by cadmium acetate is larger than the quantum dots prepared by cadmium chloride and cadmium nitrate. The increase in size can be attributed to the low stability constant of cadmium acetate in comparison with cadmium chloride and cadmium nitrate. The FTIR and thermogravimetric analysis showed that the nature of capping molecule on the surface of quantum dots are different depending on the cadmium precursors which affect the emission from CdS quantum dots. Photoemission spectroscopy revealed that the emission of quantum dots prepared by cadmium acetate has high intensity band edge emission along with low intensity trapping state emission. However the CdS quantum dots prepared by cadmium chloride and cadmium nitrate produced only trapping state emissions.

  2. Complex dynamics in planar two-electron quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Schroeter, Sebastian Josef Arthur

    2013-06-25

    Quantum dots play an important role in a wide range of recent experimental and technological developments. In particular they are promising candidates for realisations of quantum bits and further applications in quantum information theory. The harmonically confined Hooke's atom model is experimentally verified and separates in centre-of-mass and relative coordinates. Findings that are contradictory to this separability call for an extension of the model, in particular changing the confinement potential. In order to study effects of an anharmonic confinement potential on spectral properties of planar two-electron quantum dots a sophisticated numerical approach is developed. Comparison between the Helium atom, Hooke's atom and an anharmonic potential model are undertaken in order to improve the description of quantum dots. Classical and quantum features of complexity and chaos are investigated and used to characterise the dynamics of the system to be mixed regular-chaotic. Influence of decoherence can be described by quantum fidelity, which measures the effect of a perturbation on the time evolution. The quantum fidelity of eigenstates of the system depends strongly on the properties of the perturbation. Several methods for solving the time-dependent Schrödinger equation are implemented and a high level of accuracy for long time evolutions is achieved. The concept of offset entanglement, the entanglement of harmonic models in the noninteracting limit, is introduced. This concept explains different questions raised in the literature for harmonic quantum dot models, recently. It shows that only in the groundstate the electrons are not entangled in the fermionic sense. The applicability, validity, and origin of Hund's first rule in general quantum dot models is further addressed. In fact Hund's first rule is only applicable, and in this case also valid, for one pair of singlet and triplet states in Hooke's atom. For more realistic models of two

  3. Complex dynamics in planar two-electron quantum dots

    International Nuclear Information System (INIS)

    Schroeter, Sebastian Josef Arthur

    2013-01-01

    Quantum dots play an important role in a wide range of recent experimental and technological developments. In particular they are promising candidates for realisations of quantum bits and further applications in quantum information theory. The harmonically confined Hooke's atom model is experimentally verified and separates in centre-of-mass and relative coordinates. Findings that are contradictory to this separability call for an extension of the model, in particular changing the confinement potential. In order to study effects of an anharmonic confinement potential on spectral properties of planar two-electron quantum dots a sophisticated numerical approach is developed. Comparison between the Helium atom, Hooke's atom and an anharmonic potential model are undertaken in order to improve the description of quantum dots. Classical and quantum features of complexity and chaos are investigated and used to characterise the dynamics of the system to be mixed regular-chaotic. Influence of decoherence can be described by quantum fidelity, which measures the effect of a perturbation on the time evolution. The quantum fidelity of eigenstates of the system depends strongly on the properties of the perturbation. Several methods for solving the time-dependent Schrödinger equation are implemented and a high level of accuracy for long time evolutions is achieved. The concept of offset entanglement, the entanglement of harmonic models in the noninteracting limit, is introduced. This concept explains different questions raised in the literature for harmonic quantum dot models, recently. It shows that only in the groundstate the electrons are not entangled in the fermionic sense. The applicability, validity, and origin of Hund's first rule in general quantum dot models is further addressed. In fact Hund's first rule is only applicable, and in this case also valid, for one pair of singlet and triplet states in Hooke's atom. For more realistic models of two-electron quantum dots an

  4. [Effect of quantum dots CdSe/ZnS's concentration on its fluorescence].

    Science.gov (United States)

    Jin, Min; Huang, Yu-hua; Luo, Ji-xiang

    2015-02-01

    The authors measured the absorption and the fluorescence spectra of the quantum dots CdSe/ZnS with 4 nm in size at different concentration with the use of the UV-Vis absorption spectroscopy and fluorescence spectrometer. The effect of quantum dots CdSe/ZnS's concentration on its fluorescence was especially studied and its physical mechanism was analyzed. It was observed that the optimal concentration of the quantum dots CdSe/ZnS for fluorescence is 2 micromole x L(-1). When the quantum dot's concentration is over 2 micromol x L(-1), the fluorescence is decreased with the increase in the concentration. While the quantum dot's concentration is less than 2 micromol x L(-1), the fluorescence is decreased with the decrease in the concentration. There are two main reasons: (1) fluorescence quenching and 2) the competition between absorption and fluorescence. When the quantum dot's concentration is over 2 micromol x L(-1), the distance between quantum dots is so close that the fluorescence quenching is induced. The closer the distance between quantum dots is, the more serious the fluorescence quenching is induced. Also, in this case, the absorption is so large that some of the quantum dots can not be excited because the incident light can not pass through the whole sample. As a result, the fluorescence is decreased with the increase in the quantum dot's concentration. As the quantum dot's concentration is below 2 micromol x L(-1), the distance between quantum dots is far enough that no more fluorescence quenching is induced. In this case, the fluorescence is determined by the particle number per unit volume. More particle number per unit volume produces more fluorescence. Therefore, the fluorescence is decreased with the decrease in the quantum dot's concentration.

  5. Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure

    Energy Technology Data Exchange (ETDEWEB)

    Absalan, H; SalmanOgli, A; Rostami, R

    2013-07-31

    The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)

  6. Optical determination of vacuum Rabi splitting in a semiconductor quantum dot induced by a metal nanoparticle.

    Science.gov (United States)

    He, Yong; Jiang, Cheng; Chen, Bin; Li, Jin-Jin; Zhu, Ka-Di

    2012-07-15

    We propose a theoretical scheme to determine the vacuum Rabi splitting in a single semiconductor quantum dot (SQD) induced by a metal nanoparticle (MNP). Based on cavity quantum electrodynamics, the exciton-plasmon interaction between the SQD and the MNP is considered while a strong pump laser and a weak probe laser are simultaneously presented. By decreasing the distance between them, we can increase the coupling strength. At resonance, thanks to the strong coupling, a vacuum Rabi splitting can be observed clearly in the probe absorption spectrum. The coupling strength can be obtained by measuring the vacuum Rabi splitting. This strong coupling is significant for the investigation of surface-plasmon-based quantum information processing.

  7. The Study of Quantum Interference in Metallic Photonic Crystals Doped with Four-Level Quantum Dots

    Directory of Open Access Journals (Sweden)

    Hatef Ali

    2010-01-01

    Full Text Available Abstract In this work, the absorption coefficient of a metallic photonic crystal doped with nanoparticles has been obtained using numerical simulation techniques. The effects of quantum interference and the concentration of doped particles on the absorption coefficient of the system have been investigated. The nanoparticles have been considered as semiconductor quantum dots which behave as a four-level quantum system and are driven by a single coherent laser field. The results show that changing the position of the photonic band gap about the resonant energy of the two lower levels directly affects the decay rate, and the system can be switched between transparent and opaque states if the probe laser field is tuned to the resonance frequency. These results provide an application for metallic nanostructures in the fabrication of new optical switches and photonic devices.

  8. Enhancement of squeezing in resonance fluorescence of a driven quantum dot close to a graphene sheet

    Science.gov (United States)

    Fang, Wei; Wu, Qing-lin; Wu, Shao-ping; Li, Gao-xiang

    2016-05-01

    We investigate squeezing of the resonance fluorescence of a laser-driven quantum dot (QD) close to a graphene sheet. The coupling between the QD and the surface plasmon around the graphene sheet is frequency dependent in the terahertz region, which can be adjusted by the laser intensity. Distinct decay rates in different transition channels of dressed QDs can be achieved due to the tailored photon reservoir, which can be used to improve the squeezing. It is found that increases in both the dephasing rate and the environmental temperature are harmful to the squeezing. Meanwhile, an enhancement in the QD-plasmon coupling strength may reduce the fragility of squeezing against the decoherence process. Additionally, in the strong light-matter coupling region, squeezing can be largely enhanced by tuning the strength of the pump field and its detuning from the QD.

  9. Collective Rabi dynamics of electromagnetically coupled quantum-dot ensembles

    Science.gov (United States)

    Glosser, Connor; Shanker, B.; Piermarocchi, Carlo

    2017-09-01

    Rabi oscillations typify the inherent nonlinearity of optical excitations in quantum dots. Using an integral kernel formulation to solve the three-dimensional Maxwell-Bloch equations in ensembles of up to 104 quantum dots, we observe features in Rabi oscillations due to the interplay of nonlinearity, nonequilibrium excitation, and electromagnetic coupling between the dots. This approach allows us to observe the dynamics of each dot in the ensemble without resorting to spatial averages. Our simulations predict synchronized multiplets of dots that exchange energy, dots that dynamically couple to screen the effect of incident external radiation, localization of the polarization due to randomness and interactions, as well as wavelength-scale regions of enhanced and suppressed polarization.

  10. Silicon quantum dots with counted antimony donor implants

    Science.gov (United States)

    Singh, Meenakshi; Pacheco, Jose; Perry, Daniel; Wendt, Joel; Manginell, Ronald; Dominguez, Jason; Pluym, Tammy; Luhman, Dwight; Bielejec, Edward; Lilly, Michael; Carroll, Malcolm

    Antimony donor implants next to silicon quantum dots have been detected with integrated solid-state diode detectors with single ion precision. Devices with counted number of donors have been fabricated and low temperature transport measurements have been performed. Charge offsets, indicative of donor ionization and coupling to the quantum dot, have been detected in these devices. The number of offsets corresponds to 10-50% of the number of donors counted. We will report on tunneling time measurements and spin readout measurements on the donor offsets. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  11. Nanostructure assembly of indium sulphide quantum dots and their characterization.

    Science.gov (United States)

    Vigneashwari, B; Ravichandran, V; Parameswaran, P; Dash, S; Tyagi, A K

    2008-02-01

    Nanocrystals (approximately 5 nm) of the semiconducting wide band gap material beta-In2S3 obtained by chemical synthesis through a hydrothermal route were characterized for phase and compositional purity. These nanoparticles exhibited quantum confinement characteristics as revealed by a blue-shifted optical absorption. These quantum dots of beta-In2S3 were electrically driven from a monodisperse colloidal suspension on to conducting glass substrates by Electophoretic Deposition (EPD) technique and nanostructural thin films were obtained. The crystalline and morphological structures of these deposits were investigated by X-ray diffraction and nanoscopic techniques. We report here that certain interesting nanostructural morphologies were observed in the two-dimensional quantum dot assemblies of beta-In2S3. The effect of the controlling parameters on the cluster growth and deposit integrity was also systematically studied through a series of experiments and the results are reported here.

  12. Confinement sensitivity in quantum dot singlet-triplet relaxation

    Science.gov (United States)

    Wesslén, C. J.; Lindroth, E.

    2017-11-01

    Spin-orbit mediated phonon relaxation in a two-dimensional quantum dot is investigated using different confining potentials. Elliptical harmonic oscillator and cylindrical well results are compared to each other in the case of a two-electron GaAs quantum dot subjected to a tilted magnetic field. The lowest energy set of two-body singlet and triplet states are calculated including spin-orbit and magnetic effects. These are used to calculate the phonon induced transition rate from the excited triplet to the ground state singlet for magnetic fields up to where the states cross. The roll of the cubic Dresselhaus effect, which is found to be much more important than previously assumed, and the positioning of ‘spin hot-spots’ are discussed and relaxation rates for a few different systems are exhibited.

  13. Bit-Serial Adder Based on Quantum Dots

    Science.gov (United States)

    Fijany, Amir; Toomarian, Nikzad; Modarress, Katayoon; Spotnitz, Mathew

    2003-01-01

    A proposed integrated circuit based on quantum-dot cellular automata (QCA) would function as a bit-serial adder. This circuit would serve as a prototype building block for demonstrating the feasibility of quantum-dots computing and for the further development of increasingly complex and increasingly capable quantum-dots computing circuits. QCA-based bit-serial adders would be especially useful in that they would enable the development of highly parallel and systolic processors for implementing fast Fourier, cosine, Hartley, and wavelet transforms. The proposed circuit would complement the QCA-based circuits described in "Implementing Permutation Matrices by Use of Quantum Dots" (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42 and "Compact Interconnection Networks Based on Quantum Dots" (NPO-20855), which appears elsewhere in this issue. Those articles described the limitations of very-large-scale-integrated (VLSI) circuitry and the major potential advantage afforded by QCA. To recapitulate: In a VLSI circuit, signal paths that are required not to interact with each other must not cross in the same plane. In contrast, for reasons too complex to describe in the limited space available for this article, suitably designed and operated QCA-based signal paths that are required not to interact with each other can nevertheless be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. To enable a meaningful description of the proposed bit-serial adder, it is necessary to further recapitulate the description of a quantum-dot cellular automation from the first-mentioned prior article: A quantum-dot cellular automaton contains four quantum dots positioned at the corners of a square cell. The cell contains two extra mobile electrons that can tunnel (in the

  14. Quantum dot nanoscale heterostructures for solar energy conversion.

    Science.gov (United States)

    Selinsky, Rachel S; Ding, Qi; Faber, Matthew S; Wright, John C; Jin, Song

    2013-04-07

    Quantum dot nanoscale semiconductor heterostructures (QDHs) are a class of materials potentially useful for integration into solar energy conversion devices. However, realizing the potential of these heterostructured systems requires the ability to identify and synthesize heterostructures with suitably designed materials, controlled size and morphology of each component, and structural control over their shared interface. In this review, we will present the case for the utility and advantages of chemically synthesized QDHs for solar energy conversion, beginning with an overview of various methods of heterostructured material synthesis and a survey of heretofore reported materials systems. The fundamental charge transfer properties of the resulting materials combinations and their basic design principles will be outlined. Finally, we will discuss representative solar photovoltaic and photoelectrochemical devices employing QDHs (including quantum dot sensitized solar cells, or QDSSCs) and examine how QDH synthesis and design impacts their performance.

  15. Facile synthesis and photoluminescence mechanism of graphene quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ping; Zhou, Ligang; Zhang, Shenli; Pan, Wei, E-mail: sjtushelwill@sjtu.edu.cn; Shen, Wenzhong, E-mail: wzshen@sjtu.edu.cn [Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Wan, Neng [SEU-FEI Nano Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronics Science and Engineering, Southeast University, Nanjing 210096 (China)

    2014-12-28

    We report a facile hydrothermal synthesis of intrinsic fluorescent graphene quantum dots (GQDs) with two-dimensional morphology. This synthesis uses glucose, concentrate sulfuric acid, and deionized water as reagents. Concentrated sulfuric acid is found to play a key role in controlling the transformation of as-prepared hydrothermal products from amorphous carbon nanodots to well-crystallized GQDs. These GQDs show typical absorption characteristic for graphene, and have nearly excitation-independent ultraviolet and blue intrinsic emissions. Temperature-dependent PL measurements have demonstrated strong electron-electron scattering and electron-phonon interactions, suggesting a similar temperature behavior of GQDs to inorganic semiconductor quantum dots. According to optical studies, the ultraviolet emission is found to originate from the recombination of electron-hole pairs localized in the C=C bonds, while the blue emission is from the electron transition of sp{sup 2} domains.

  16. Palladium gates for reproducible quantum dots in silicon.

    Science.gov (United States)

    Brauns, Matthias; Amitonov, Sergey V; Spruijtenburg, Paul-Christiaan; Zwanenburg, Floris A

    2018-04-09

    We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabrication route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined quantum dots, which are reproducibly fabricated. Furthermore, palladium enables us to further shrink the gate design, allowing us to perform electron transport measurements in the few-electron regime in devices comprising only two gate layers, a major technological advancement. It remains to be seen, whether the introduction of palladium gates can improve the excellent results on electron and nuclear spin qubits defined with an aluminium gate stack.

  17. Selective biosensing of Staphylococcus aureus using chitosan quantum dots

    Science.gov (United States)

    Abdelhamid, Hani Nasser; Wu, Hui-Fen

    2018-01-01

    Selective biosensing of Staphylococcus aureus (S. aureus) using chitosan modified quantum dots (CTS@CdS QDs) in the presence of hydrogen peroxide is reported. The method is based on the intrinsic positive catalase activity of S. aureus. CTS@CdS quantum dots provide high dispersion in aqueous media with high fluorescence emission. Staphylococcus aureus causes a selective quenching of the fluorescence emission of CTS@CdS QDs in the presence of H2O2 compared to other pathogens such as Escherichia coli and Pseudomonas aeruginosa. The intrinsic enzymatic character of S. aureus (catalase positive) offers selective and fast biosensing. The present method is highly selective for positive catalase species and requires no expensive reagents such as antibodies, aptamers or microbeads. It could be extended for other species that are positive catalase.

  18. Quantum dots, advantages and drawbacks for lighting applications

    International Nuclear Information System (INIS)

    Schmidmayr, D.; Zehetner, J.

    2014-01-01

    At present 19% of the world-wide consumed electricity is used for lighting purposes. Compared e.g. to the well-known incandescent light bulb a modern warm white LED with a similar light quality has a 25 times higher lifetime and operates approximately ten times more efficient. One major component limiting the efficiency is the color conversion material (phosphor). Due to broad emission bandwidths of traditional phosphors energy is wasted. In order to further improve efficiency new robust fluorescent materials which allow selective, narrow band conversion are needed. In this paper we investigate the potential of quantum dots and show that they are able to increase both luminous flux and spectral coverage at the same time. Furthermore we evaluate the optical properties of quantum dot samples under thermal stress and aerial oxygen influence. Photoluminescence intensity degradation as well as a shift of the emission peak wavelength still pose a problem. (authors)

  19. Valley-orbit hybrid states in Si quantum dots

    Science.gov (United States)

    Gamble, John; Friesen, Mark; Coppersmith, S. N.

    2013-03-01

    The conduction band for electrons in layered Si nanostructures oriented along (001) has two low-lying valleys. Most theoretical treatments assume that these valleys are decoupled from the long-wavelength physics of electron confinement. In this work, we show that even a minimal amount of disorder (a single atomic step at the quantum well interface) is sufficient to mix valley states and electron orbitals, causing a significant distortion of the long-wavelength electron envelope. For physically realistic electric fields and dot sizes, this valley-orbit coupling impacts all electronic states in Si quantum dots, implying that one must always consider valley-orbit hybrid states, rather than distinct valley and orbital degrees of freedom. We discuss the ramifications of our results on silicon quantum dot qubits. This work was supported in part by ARO (W911NF-08-1-0482) and NSF (DMR-0805045).

  20. Room temperature excitation spectroscopy of single quantum dots

    Directory of Open Access Journals (Sweden)

    Christian Blum

    2011-08-01

    Full Text Available We report a single molecule detection scheme to investigate excitation spectra of single emitters at room temperature. We demonstrate the potential of single emitter photoluminescence excitation spectroscopy by recording excitation spectra of single CdSe nanocrystals over a wide spectral range of 100 nm. The spectra exhibit emission intermittency, characteristic of single emitters. We observe large variations in the spectra close to the band edge, which represent the individual heterogeneity of the observed quantum dots. We also find specific excitation wavelengths for which the single quantum dots analyzed show an increased propensity for a transition to a long-lived dark state. We expect that the additional capability of recording excitation spectra at room temperature from single emitters will enable insights into the photophysics of emitters that so far have remained inaccessible.

  1. Far-infrared spectra of lateral quantum dot molecules

    Science.gov (United States)

    Helle, M.; Harju, A.; Nieminen, R. M.

    2006-02-01

    We study effects of electron electron interactions and confinement potential on the magneto-optical absorption spectrum in the far-infrared (FIR) range of lateral quantum dot molecules (QDMs). We calculate FIR spectra for three different QDM confinement potentials. We use an accurate exact diagonalization technique for two interacting electrons and calculate dipole transitions between two-body levels with perturbation theory. We conclude that the two-electron FIR spectra directly reflect the symmetry of the confinement potential and interactions cause only small shifts in the spectra. These predictions could be tested in experiments with non-parabolic quantum dots (QDs) by changing the number of confined electrons. We also calculate FIR spectra for up to six non-interacting electrons and observe some additional features in the spectrum.

  2. Squeezed magnetobipolarons in two-dimensional quantum dot

    International Nuclear Information System (INIS)

    Zhang Yanmin; Wang Yunhua; Cheng Ze; Xu Qinfeng

    2008-01-01

    In this Letter, a different method was given for calculating the energies of the magnetobipolarons confined in a parabolic QD (quantum dot). We introduced single-mode squeezed states transformation, which are based on the Lee-Low-Pines and Huybrechts (LLP-H) canonical transformations. This method can provide results not only for the ground state energy but also for the excited states energies. Moreover, it can be applied to the entire range of the electron-phonon coupling strength. Comparing with the results of the LLP-H transformations, we have obtained more accurate results for the ground state energy, excited states energies and binding energy of the bipolarons. It shows that the magnetic field and the quantum dot can facilitate the formation of the bipolarons when η is smaller than some value

  3. Simulating electron spin entanglement in a double quantum dot

    Science.gov (United States)

    Rodriguez-Moreno, M. A.; Hernandez de La Luz, A. D.; Meza-Montes, Lilia

    2011-03-01

    One of the biggest advantages of having a working quantum-computing device when compared with a classical one, is the exponential speedup of calculations. This exponential increase is based on the ability of a quantum system to create and operate on entangled states. In order to study theoretically the entanglement between two electron spins, we simulate the dynamics of two electron spins in an electrostatically-defined double quantum dot with a finite barrier height between the dots. Electrons are initially confined to separated quantum dots. Barrier height is varied and the spin entanglement as a function of this variation is investigated. The evolution of the system is simulated by using a numerical approach for solving the time-dependent Schrödinger equation for two particles. Partially supported by VIEP-BUAP.

  4. Fluorescence and Bonding of Quantum Dots on DNA Origami Constructs

    Science.gov (United States)

    Kessinger, Matthew; Corrigan, Timothy; Neff, David; Norton, Michael; Concord University Collaboration; Marshall University Collaboration

    2015-03-01

    Semiconductor quantum dots (QDots) have historically been of interest to the scientific community since their creation for various applications ranging from solar energy to optical labeling. In this study, bioconjugated CdSe/ZnS core/shell QDots were synthesized and functionalized with 3-mercaptopropionic acid using both traditional ligand exchange as well as newly developed in situ functionalization techniques used to increase the quantum yield of the QDots. Their fluorescence and bonding to both gold as well as DNA origami were investigated for use in self assembled DNA constructs. It is believed that controlling the attachment and spacing of these nanoparticles on DNA origami could be used in a variety of optical labeling and sensing applications. Commercially available biotin and streptavidin functionalized quantum dots were also examined, and subject to the same experiments with gold nanoparticles as the MPA functionalized QDots.

  5. Carbon quantum dots and applications in photocatalytic energy conversion.

    Science.gov (United States)

    Fernando, K A Shiral; Sahu, Sushant; Liu, Yamin; Lewis, William K; Guliants, Elena A; Jafariyan, Amirhossein; Wang, Ping; Bunker, Christopher E; Sun, Ya-Ping

    2015-04-29

    Quantum dots (QDs) generally refer to nanoscale particles of conventional semiconductors that are subject to the quantum-confinement effect, though other nanomaterials of similar optical and redox properties are also named as QDs even in the absence of strictly defined quantum confinement. Among such nanomaterials that have attracted tremendous recent interest are carbon dots, which are small carbon nanoparticles with some form of surface passivation, and graphene quantum dots in various configurations. In this article, we highlight these carbon-based QDs by focusing on their syntheses, on their photoexcited state properties and redox processes, and on their applications as photocatalysts in visible-light carbon dioxide reduction and in water-splitting, as well as on their mechanistic similarities and differences.

  6. Phase- and Polarization-Controlled Two-Photon Rabi Oscillation of the Biexciton State in a Semiconductor Quantum Dot

    Directory of Open Access Journals (Sweden)

    Erlin Sun

    2014-01-01

    Full Text Available Under a degenerate two-photon resonant excitation, the Rabi oscillation of the four-level biexciton system in a semiconductor quantum dot is theoretically investigated. The influence of the laser phases on the state manipulation is modeled and numerically calculated. Due to the interference between different excitation paths, the laser phase plays an important role and can be utilized as an alternate control knob to coherently manipulate the biexciton state. The phase control can be facilely implemented by changing the light polarization via a quarter-wave plate.

  7. Theoretical Investigation of Light Transmission in a Slab Cavity via Kerr Nonlinearity of Carbon Nanotube Quantum Dot Nanostructure

    Science.gov (United States)

    Solookinejad, Gh.; Jabbari, M.; Sangachin, E. Ahmadi; Asadpour, S. H.

    2018-01-01

    In this paper, we discuss the transmission properties of weak probe laser field propagate through slab cavity with defect layer of carbon-nanotube quantum dot (CNT-QD) nanostructure. We show that due to spin-orbit coupling, the double electromagnetically induced transparency (EIT) windows appear and the giant Kerr nonlinearity of the intracavity medium can lead to manipulating of transmission coefficient of weak probe light. The thickness effect of defect layer medium has also been analyzed on transmission properties of probe laser field. Our proposed model may be useful for integrated photonics devices based on CNT-QD for applications in all-optical systems which require multiple EIT effect.

  8. A Single Molecule Investigation of the Photostability of Quantum Dots

    DEFF Research Database (Denmark)

    Christensen, Eva Arnspang; Kulatunga, Pasad; Lagerholm, B. Christoffer

    2012-01-01

    Quantum dots (QDs) are very attractive probes for multi-color fluorescence applications. We report here however that single QDs that are subject to continuous blue excitation from a 100W mercury arc lamp will undergo a continuous blue-switching of the emission wavelength eventually reaching a per...... is especially detrimental for multi-color single molecule applications, as we regularly observe spectral blue-shifts of 50 nm, or more even after only ten seconds of illumination....

  9. Probing electric and magnetic vacuum fluctuations with quantum dots

    OpenAIRE

    Tighineanu, Petru; Andersen, Mads Lykke; Sørensen, Anders Søndberg; Stobbe, Søren; Lodahl, Peter

    2014-01-01

    The electromagnetic-vacuum-field fluctuations are intimately linked to the process of spontaneous emission of light. Atomic emitters cannot probe electric- and magnetic-field fluctuations simultaneously because electric and magnetic transitions correspond to different selection rules. In this paper we show that semiconductor quantum dots are fundamentally different and are capable of mediating electric-dipole, magnetic-dipole, and electric-quadrupole transitions on a single electronic resonan...

  10. Quantum Dots Based Rad-Hard Computing and Sensors

    Science.gov (United States)

    Fijany, A.; Klimeck, G.; Leon, R.; Qiu, Y.; Toomarian, N.

    2001-01-01

    Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.

  11. Computational models for the berry phase in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakar, S., E-mail: rmelnik@wlu.ca; Melnik, R. V. N., E-mail: rmelnik@wlu.ca [M2NeT Lab, Wilfrid Laurier University, 75 University Ave W, Waterloo, ON N2L 3C5 (Canada); Sebetci, A. [Department of Mechanical Engineering, Mevlana University, 42003, Konya (Turkey)

    2014-10-06

    By developing a new model and its finite element implementation, we analyze the Berry phase low-dimensional semiconductor nanostructures, focusing on quantum dots (QDs). In particular, we solve the Schrödinger equation and investigate the evolution of the spin dynamics during the adiabatic transport of the QDs in the 2D plane along circular trajectory. Based on this study, we reveal that the Berry phase is highly sensitive to the Rashba and Dresselhaus spin-orbit lengths.

  12. Universal quantum computing with nanowire double quantum dots

    International Nuclear Information System (INIS)

    Xue Peng

    2011-01-01

    We present a method for implementing universal quantum computing using a singlet and triplets of nanowire double quantum dots coupled to a one-dimensional transmission line resonator. This method is suitable and of interest for both quantum computing and quantum control with inhibition of spontaneous emission, enhanced spin qubit lifetime, strong coupling and quantum nondemolition measurements of spin qubits. We analyze the performance and stability of all the required operations and emphasize that all techniques are feasible with current experimental technology.

  13. Sexithiophenes as efficient luminescence quenchers of quantum dots

    Directory of Open Access Journals (Sweden)

    Christopher R. Mason

    2011-12-01

    Full Text Available Sexithiophenes 1a and 1b, in which a 4-(dimethylaminophenyl unit is incorporated as an end-capping group, were synthesised and characterised by cyclic voltammetry, absorption spectroscopy and UV–vis spectroelectrochemistry. Additionally, their ability to function as effective luminescence quenchers for quantum dot emission was studied by photoluminescence spectroscopy and compared with the performance of alkyl end-capped sexithiophenes 2a and 2b.

  14. Power-law photoluminescence decay in quantum dots

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2013-01-01

    Roč. 5, č. 6 (2013), s. 608-610 ISSN 2164-6627 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * indirect gap * photoluminescence * electron-phonon interaction * non-adiabatic Subject RIV: BM - Solid Matter Physics ; Magnetism; JA - Electronics ; Optoelectronics, Electrical Engineering (UMCH-V)

  15. Rapid detection of bacteria by carbon quantum dots.

    Science.gov (United States)

    Mandal, Tapas K; Parvin, Nargish

    2011-12-01

    This work demonstrated a fluorescence measurement method for rapid detection of bacteria and their counting by using water-soluble carbon quantum dots (CQDs) as a fluorescence marker while sewage water bacteria were detection target bacteria. Highly luminescent water-soluble CQDs were prepared by carbonizing waste part of rice straw materials in a furnace under in-sufficient air flow. Bacteria in a LB media with count the total number of bacteria within a shortest time from any sample of environment.

  16. Quantum Dot-based Immunohistochemistry for Pathological Applications

    Directory of Open Access Journals (Sweden)

    Li Zhou

    2016-01-01

    Full Text Available Quantum dots (QDs are novel light emitting semiconductor nanocrystals with diameter ranging from 2 to 20 nm. In comparison with traditional organic dyes and fluorescent proteins, QDs possess unique optical properties including extremely high fluorescence efficiency and minimal photobleaching which make them emerge as a new class of fluorescent labels for molecular imaging and biomedical analysis. Herein, recent advances in fundamental mechanisms and pathological applications of QD were reviewed.

  17. Efficient spray-coated colloidal quantum dot solar cells

    KAUST Repository

    Kramer, Illan J.

    2014-11-10

    (Figure Presented). A colloidal quantum dot solar cell is fabricated by spray-coating under ambient conditions. By developing a room-temperature spray-coating technique and implementing a fully automated process with near monolayer control - an approach termed as sprayLD - an electronic defect is eliminated resulting in solar cell performance and statistical distribution superior to prior batch-processed methods along with a hero performance of 8.1%.

  18. Graded Doping for Enhanced Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Ning, Zhijun

    2013-02-05

    A novel approach to improving all-inorganic colloidal quantum dot (CQD) homojunction solar cells by engineering the doping spatial profile to produce a doping gradient within the n-type absorber is presented. The doping gradient greatly improves carrier collection and enhances the voltages attainable by the device, leading to a 1 power point power conversion efficiency (PCE) improvement over previous inorganic CQD solar cells. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Lead-Salt Quantum-Dot Ionic Liquids

    KAUST Repository

    Sun, Liangfeng

    2010-03-08

    PbS quantum dots (QDs) are functionalized using ionic liquids with thiol moieties as capping ligands. The resulting amphiphilic QD ionic liquids exhibit fluidlike behavior at room temperature, even in the absence of solvents. The photostability of the QDs is dramatically improved compared to the as-synthesized oleic acid-capped QDs dispersed in toluene. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Electron Acceptor Materials Engineering in Colloidal Quantum Dot Solar Cells

    KAUST Repository

    Liu, Huan

    2011-07-15

    Lead sulfide colloidal quantum dot (CQD) solar cells with a solar power conversion efficiency of 5.6% are reported. The result is achieved through careful optimization of the titanium dioxide electrode that serves as the electron acceptor. Metal-ion-doped sol-gel-derived titanium dioxide electrodes produce a tunable-bandedge, well-passivated materials platform for CQD solar cell optimization. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Nanogel-quantum dot hybrid nanoparticles for live cell imaging

    International Nuclear Information System (INIS)

    Hasegawa, Urara; Nomura, Shin-ichiro M.; Kaul, Sunil C.; Hirano, Takashi; Akiyoshi, Kazunari

    2005-01-01

    We report here a novel carrier of quantum dots (QDs) for intracellular labeling. Monodisperse hybrid nanoparticles (38 nm in diameter) of QDs were prepared by simple mixing with nanogels of cholesterol-bearing pullulan (CHP) modified with amino groups (CHPNH 2 ). The CHPNH 2 -QD nanoparticles were effectively internalized into the various human cells examined. The efficiency of cellular uptake was much higher than that of a conventional carrier, cationic liposome. These hybrid nanoparticles could be a promising fluorescent probe for bioimaging

  2. Dephasing and hyperfine interaction in carbon nanotubes double quantum dots

    DEFF Research Database (Denmark)

    Reynoso, Andres Alejandro; Flensberg, Karsten

    2012-01-01

    We study theoretically the return probability experiment, which is used to measure the dephasing time T-2*, in a double quantum dot (DQD) in semiconducting carbon nanotubes with spin-orbit coupling and disorder-induced valley mixing. Dephasing is due to hyperfine interaction with the spins of the C...... with these for DQDs in clean nanotubes, whereas the disorder effect is always relevant when the magnetic field is perpendicular to the nanotube axis....

  3. Probing the energy reactance with adiabatically driven quantum dots

    Science.gov (United States)

    Ludovico, María Florencia; Arrachea, Liliana; Moskalets, Michael; Sánchez, David

    2018-02-01

    The tunneling Hamiltonian describes a particle transfer from one region to another. Although there is no particle storage in the tunneling region itself, it has an associated amount of energy. The corresponding energy flux was named reactance since, such as an electrical reactance, it manifests itself in time-dependent transport only. We show here that the existence of the energy reactance leads to the universal response of a mesoscopic thermometer, a floating contact coupled to an adiabatically driven quantum dot.

  4. Templated self-assembly of quantum dots from aqueous solution using protein scaffolds

    Energy Technology Data Exchange (ETDEWEB)

    Blum, Amy Szuchmacher [Center for Bio/Molecular Science and Engineering, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375 (United States); Soto, Carissa M [Center for Bio/Molecular Science and Engineering, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375 (United States); Wilson, Charmaine D [Geo-Centers, Incorporated, Newton, MA 02459 (United States); Whitley, Jessica L [Geo-Centers, Incorporated, Newton, MA 02459 (United States); Moore, Martin H [Center for Bio/Molecular Science and Engineering, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375 (United States); Sapsford, Kim E [George Mason University, 10910 University Boulevard, Manassas, VA 20110 (United States); Lin, Tianwei [Department of Molecular Biology, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037 (United States); Chatterji, Anju [Department of Molecular Biology, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037 (United States); Johnson, John E [Department of Molecular Biology, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037 (United States); Ratna, Banahalli R [Center for Bio/Molecular Science and Engineering, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375 (United States)

    2006-10-28

    Short, histidine-containing peptides can be conjugated to lysine-containing protein scaffolds to controllably attach quantum dots (QDs) to the scaffold, allowing for generic attachment of quantum dots to any protein without the use of specially engineered domains. This technique was used to bind quantum dots from aqueous solution to both chicken IgG and cowpea mosaic virus (CPMV), a 30 nm viral particle. These quantum dot-protein assemblies were studied in detail. The IgG-QD complexes were shown to retain binding specificity to their antigen after modification. The CPMV-QD complexes have a local concentration of quantum dots greater than 3000 nmol ml{sup -1}, and show a 15% increase in fluorescence quantum yield over free quantum dots in solution.

  5. Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu

    2009-01-01

    The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design

  6. Aptamer-conjugated dendrimer-modified quantum dots for glioblastoma cells imaging

    International Nuclear Information System (INIS)

    Li Zhiming; Huang Peng; He Rong; Bao Chenchen; Cui Daxiang; Zhang Xiaomin; Ren Qiushi

    2009-01-01

    Targeted quantum dots have shown potential as a platform for development of cancer imaging. Aptamers have recently been demonstrated as ideal candidates for molecular targeting applications. In present work, polyamidoamine dendrimers were used to modify surface of quantum dots and improve their solubility in water solution. Then, dendrimer-modified quantum dots were conjugated with DNA aptamer, GBI-10, can recognize the extracellular matrix protein tenascin-C on the surface of human glioblastoma cells. The dendrimer-modified quantum dots exhibit water-soluble, high quantum yield, and good biocompatibility. Aptamer-conjugated quantum dots can specifically target U251 human glioblastoma cells. High-performance aptamer-conjugated dendrimers modified quantum dot-based nanoprobes have great potential in application such as cancer imaging.

  7. Green, Rapid, and Universal Preparation Approach of Graphene Quantum Dots under Ultraviolet Irradiation.

    Science.gov (United States)

    Zhu, Jinli; Tang, Yanfeng; Wang, Gang; Mao, Jiarong; Liu, Zhiduo; Sun, Tongming; Wang, Miao; Chen, Da; Yang, Yucheng; Li, Jipeng; Deng, Yuan; Yang, Siwei

    2017-04-26

    It is of great significance and importance to explore a mild, clean, and highly efficient universal approach for the synthesis of graphene quantum dots. Herein, we introduced a new green, rapid, and universal preparation approach for graphene quantum dots via the free-radical polymerization of oxygen-containing aromatic compounds under ultraviolet irradiation. This approach had a high yield (86%), and the byproducts are only H 2 O and CO 2 . The obtained graphene quantum dots were well-crystallized and showed remarkable optical and biological properties. The colorful, different-sized graphene quantum dots can be used in fluorescent bioimaging in vitro and in vivo. This approach is suitable not only for the preparation of graphene quantum dots but also for heteroatom-doped graphene quantum dots.

  8. Quantum size effect and thermal stability of carbon-nanotube-based quantum dot

    International Nuclear Information System (INIS)

    Huang, N.Y.; Peng, J.; Liang, S.D.; Li, Z.B.; Xu, N.S.

    2004-01-01

    Full text: Based on semi-experience quantum chemical calculation, we have investigated the quantum size effect and thermal stability of open-end carbon nanotube (5, 5) quantum dots of 20 to 400 atoms. It was found that there is a gap in the energy band of all carbon nanotube (5, 5) quantum dots although a (5, 5) carbon nanotube is metallic. The energy gap of quantum dots is much dependent of the number of atoms in a dot, as a result of the quantization rules imposed by the finite scales in both radial and axial directions of a carbon nanotube quantum dot. Also, the heat of formation of carbon nanotube quantum dots is dependent of the size of a quantum dot. (author)

  9. Functional Carbon Quantum Dots: A Versatile Platform for Chemosensing and Biosensing.

    Science.gov (United States)

    Feng, Hui; Qian, Zhaosheng

    2017-11-24

    Carbon quantum dot has emerged as a new promising fluorescent nanomaterial due to its excellent optical properties, outstanding biocompatibility and accessible fabrication methods, and has shown huge application perspective in a variety of areas, especially in chemosensing and biosensing applications. In this personal account, we give a brief overview of carbon quantum dots from its origin and preparation methods, present some advance on fluorescence origin of carbon quantum dots, and focus on development of chemosensors and biosensors based on functional carbon quantum dots. Comprehensive advances on functional carbon quantum dots as a versatile platform for sensing from our group are included and summarized as well as some typical examples from the other groups. The biosensing applications of functional carbon quantum dots are highlighted from selective assays of enzyme activity to fluorescent identification of cancer cells and bacteria. © 2017 The Chemical Society of Japan & Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Carrier transport in III–V quantum-dot structures for solar cells or photodetectors

    International Nuclear Information System (INIS)

    Wang Wenqi; Wang Lu; Jiang Yang; Ma Ziguang; Sun Ling; Liu Jie; Sun Qingling; Zhao Bin; Wang Wenxin; Liu Wuming; Jia Haiqiang; Chen Hong

    2016-01-01

    According to the well-established light-to-electricity conversion theory, resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent, which have been observed in quantum dots without a p–n junction at an external bias. Here, we experimentally observed more than 88% of the resonantly excited photo carriers escaping from InAs quantum dots embedded in a short-circuited p–n junction to form photocurrent. The phenomenon cannot be explained by thermionic emission, tunneling process, and intermediate-band theories. A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction. The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors. (rapid communication)

  11. L-Cysteine Capped CdSe Quantum Dots Synthesized by Photochemical Route.

    Science.gov (United States)

    Singh, Avinash; Kunwar, Amit; Rath, M C

    2018-05-01

    L-cysteine capped CdSe quantum dots were synthesized via photochemical route in aqueous solution under UV photo-irradiation. The as grown CdSe quantum dots exhibit broad fluorescence at room temperature. The CdSe quantum dots were found to be formed only through the reactions of the precursors, i.e., Cd(NH3)2+4 and SeSO2-3 with the photochemically generated 1-hydroxy-2-propyl radicals, (CH3)2COH radicals, which are formed through the process of H atom abstraction by the photoexcited acetone from 2-propanol. L-Cysteine was found to act as a suitable capping agent for the CdSe quantum dots and increases their biocompatability. Cytotoxicty effects of these quantum dots were evaluated in Chinese Hamster Ovary (CHO) epithelial cells, indicated a significant lower level for the L-cysteine capped CdSe quantum dots as compare to the bare ones.

  12. A theoretical study of exciton energy levels in laterally coupled quantum dots

    International Nuclear Information System (INIS)

    Barticevic, Z; Pacheco, M; Duque, C A; Oliveira, L E

    2009-01-01

    A theoretical study of the electronic and optical properties of laterally coupled quantum dots, under applied magnetic fields perpendicular to the plane of the dots, is presented. The exciton energy levels of such laterally coupled quantum-dot systems, together with the corresponding wavefunctions and eigenvalues, are obtained in the effective-mass approximation by using an extended variational approach in which the magnetoexciton states are simultaneously obtained. One achieves the expected limits of one single quantum dot, when the distance between the dots is zero, and of two uncoupled quantum dots, when the distance between the dots is large enough. Moreover, present calculations-with appropriate structural dimensions of the two-dot system-are shown to be in agreement with measurements in self-assembled laterally aligned GaAs quantum-dot pairs and naturally/accidentally occurring coupled quantum dots in GaAs/GaAlAs quantum wells.

  13. Controlling electron quantum dot qubits by spin-orbit interactions

    International Nuclear Information System (INIS)

    Stano, P.

    2007-01-01

    Single electron confined in a quantum dot is studied. A special emphasis is laid on the spin properties and the influence of spin-orbit interactions on the system. The study is motivated by a perspective exploitation of the spin of the confined electron as a qubit, a basic building block of in a foreseen quantum computer. The electron is described using the single band effective mass approximation, with parameters typical for a lateral electrostatically defined quantum dot in a GaAs/AlGaAs heterostructure. The stemming data for the analysis are obtained by numerical methods of exact diagonalization, however, all important conclusions are explained analytically. The work focuses on three main areas -- electron spectrum, phonon induced relaxation and electrically and magnetically induced Rabi oscillations. It is shown, how spin-orbit interactions influence the energy spectrum, cause finite spin relaxation and allow for all-electrical manipulation of the spin qubit. Among the main results is the discovery of easy passages, where the spin relaxation is unusually slow and the qubit is protected against parasitic electrical fields connected with manipulation by resonant electromagnetic fields. The results provide direct guide for manufacturing quantum dots with much improved properties, suitable for realizing single electron spin qubits. (orig.)

  14. Electronic Structure of Helium Atom in a Quantum Dot

    Science.gov (United States)

    Saha, Jayanta K.; Bhattacharyya, S.; Mukherjee, T. K.

    2016-03-01

    Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method. To be specific, precise energy eigenvalues of bound 1sns (1Se) (n = 1-6) states and the resonance parameters i.e. positions and widths of 1Se states due to 2sns (n = 2-5) and 2pnp (n = 2-5) configurations of confined helium below N = 2 ionization threshold of He+ have been estimated. The two-parameter (Depth and Width) finite oscillator potential is used to represent the confining potential due to the quantum dot. It has been explicitly demonstrated that the electronic structural properties become sensitive functions of the dot size. It is observed from the calculations of ionization potential that the stability of an impurity ion within a quantum dot may be manipulated by varying the confinement parameters. A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the width of the quantum cavity is also discussed here. TKM Gratefully Acknowledges Financial Support under Grant No. 37(3)/14/27/2014-BRNS from the Department of Atomic Energy, BRNS, Government of India. SB Acknowledges Financial Support under Grant No. PSW-160/14-15(ERO) from University Grants Commission, Government of India

  15. Tandem luminescent solar concentrators based on engineered quantum dots

    Science.gov (United States)

    Wu, Kaifeng; Li, Hongbo; Klimov, Victor I.

    2018-02-01

    Luminescent solar concentrators (LSCs) can serve as large-area sunlight collectors for terrestrial and space-based photovoltaics. Due to their high emission efficiencies and readily tunable emission and absorption spectra, colloidal quantum dots have emerged as a new and promising type of LSC fluorophore. Spectral tunability of the quantum dots also facilitates the realization of stacked multilayered LSCs, where enhanced performance is obtained through spectral splitting of incident sunlight, as in multijunction photovoltaics. Here, we demonstrate a large-area (>230 cm2) tandem LSC based on two types of nearly reabsorption-free quantum dots spectrally tuned for optimal solar-spectrum splitting. This prototype device exhibits a high optical quantum efficiency of 6.4% for sunlight illumination and solar-to-electrical power conversion efficiency of 3.1%. The efficiency gains due to the tandem architecture over single-layer devices quickly increase with increasing LSC size and can reach more than 100% in structures with window sizes of more than 2,500 cm2.

  16. Biosynthesis of luminescent quantum dots in an earthworm

    Science.gov (United States)

    Stürzenbaum, S. R.; Höckner, M.; Panneerselvam, A.; Levitt, J.; Bouillard, J.-S.; Taniguchi, S.; Dailey, L.-A.; Khanbeigi, R. Ahmad; Rosca, E. V.; Thanou, M.; Suhling, K.; Zayats, A. V.; Green, M.

    2013-01-01

    The synthesis of designer solid-state materials by living organisms is an emerging field in bio-nanotechnology. Key examples include the use of engineered viruses as templates for cobalt oxide (Co3O4) particles, superparamagnetic cobalt-platinum alloy nanowires and gold-cobalt oxide nanowires for photovoltaic and battery-related applications. Here, we show that the earthworm's metal detoxification pathway can be exploited to produce luminescent, water-soluble semiconductor cadmium telluride (CdTe) quantum dots that emit in the green region of the visible spectrum when excited in the ultraviolet region. Standard wild-type Lumbricus rubellus earthworms were exposed to soil spiked with CdCl2 and Na2TeO3 salts for 11 days. Luminescent quantum dots were isolated from chloragogenous tissues surrounding the gut of the worm, and were successfully used in live-cell imaging. The addition of polyethylene glycol on the surface of the quantum dots allowed for non-targeted, fluid-phase uptake by macrophage cells.

  17. Hybrid graphene-quantum dot phototransistors with ultrahigh gain.

    Science.gov (United States)

    Konstantatos, Gerasimos; Badioli, Michela; Gaudreau, Louis; Osmond, Johann; Bernechea, Maria; Garcia de Arquer, F Pelayo; Gatti, Fabio; Koppens, Frank H L

    2012-05-06

    Graphene is an attractive material for optoelectronics and photodetection applications because it offers a broad spectral bandwidth and fast response times. However, weak light absorption and the absence of a gain mechanism that can generate multiple charge carriers from one incident photon have limited the responsivity of graphene-based photodetectors to ∼10(-2) A W(-1). Here, we demonstrate a gain of ∼10(8) electrons per photon and a responsivity of ∼10(7) A W(-1) in a hybrid photodetector that consists of monolayer or bilayer graphene covered with a thin film of colloidal quantum dots. Strong and tunable light absorption in the quantum-dot layer creates electric charges that are transferred to the graphene, where they recirculate many times due to the high charge mobility of graphene and long trapped-charge lifetimes in the quantum-dot layer. The device, with a specific detectivity of 7 × 10(13) Jones, benefits from gate-tunable sensitivity and speed, spectral selectivity from the short-wavelength infrared to the visible, and compatibility with current circuit technologies.

  18. Hybrid quantum-classical modeling of quantum dot devices

    Science.gov (United States)

    Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas

    2017-11-01

    The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.

  19. Quantum Dot Systems: a versatile platform for quantum simulations

    International Nuclear Information System (INIS)

    Barthelemy, Pierre; Vandersypen, Lieven M.K.

    2013-01-01

    Quantum mechanics often results in extremely complex phenomena, especially when the quantum system under consideration is composed of many interacting particles. The states of these many-body systems live in a space so large that classical numerical calculations cannot compute them. Quantum simulations can be used to overcome this problem: complex quantum problems can be solved by studying experimentally an artificial quantum system operated to simulate the desired hamiltonian. Quantum dot systems have shown to be widely tunable quantum systems, that can be efficiently controlled electrically. This tunability and the versatility of their design makes them very promising quantum simulators. This paper reviews the progress towards digital quantum simulations with individually controlled quantum dots, as well as the analog quantum simulations that have been performed with these systems. The possibility to use large arrays of quantum dots to simulate the low-temperature Hubbard model is also discussed. The main issues along that path are presented and new ideas to overcome them are proposed. (copyright 2013 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

    Science.gov (United States)

    Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

    2018-04-23

    Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.