Molecular Doping of the Hole-Transporting Layer for Efficient, Single-Step Deposited Colloidal Quantum Dot Photovoltaics

KAUST Repository

Kirmani, Ahmad R.; Garcia de Arquer, F. Pelayo; Fan, James Z.; Khan, Jafar Iqbal; Walters, Grant; Hoogland, Sjoerd; Wehbe, Nimer; Said, Marcel M.; Barlow, Stephen; Laquai, Fré dé ric; Marder, Seth R.; Sargent, Edward H.; Amassian, Aram

2017-01-01

solar cells. These promising architectures employ a QD hole-transporting layer (HTL) whose intrinsically shallow Fermi level (EF) restricts band-bending at maximum power-point during solar cell operation limiting charge collection. Here, we demonstrate a

Influence of the thickness of electrochemically deposited polyaniline used as hole transporting layer on the behaviour of polymer light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Alonso, J.L. [Dpto. de Fisica y Arquitectura de Computadores, Universidad Miguel Hernandez, Av. de la Universidad s/n, Ed. Torrepinet, 03202, Elche, Alicante (Spain)], E-mail: j.l.alonso@umh.es; Ferrer, J.C. [Dpto. de Fisica y Arquitectura de Computadores, Universidad Miguel Hernandez, Av. de la Universidad s/n, Ed. Torrepinet, 03202, Elche, Alicante (Spain); Cotarelo, M.A.; Montilla, F. [Dpto. de Quimica Fisica e Instituto Universitario de Materiales de Alicante, Apdo. de Correos 99, E-03080, Alicante (Spain); Fernandez de Avila, S. [Dpto. de Fisica y Arquitectura de Computadores, Universidad Miguel Hernandez, Av. de la Universidad s/n, Ed. Torrepinet, 03202, Elche, Alicante (Spain)

2009-02-27

An experimental study about the influence of the thickness of electrochemically deposited polyaniline (PANI), used as hole-transporting layer, on the behaviour of polymer light emitting diodes is presented. Two sets of devices with a different conjugated polymer used as active layer were prepared. Poly(9-vinylcarbazole) was used for the first type of devices, whereas Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene] was used for the second type. Each set consists of five polymeric diodes in which the hole-transporting layer has been varied. In one case of each set no layer was deposited, in other one a Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) layer was deposited, and in the rest of the diodes a different thickness of electrochemically deposited PANI was employed. The optic and electronic characterization of the devices show that controlling the thickness of the PANI hole transporting layer, both the maximum emission peak of the electroluminescence curves and the driving voltage could be tuned. Furthermore, an exponential behaviour has been demonstrated for the maximum intensity of the electroluminescence curves as a function of the applied excitation voltage between anode and cathode.

Influence of the thickness of electrochemically deposited polyaniline used as hole transporting layer on the behaviour of polymer light-emitting diodes

International Nuclear Information System (INIS)

Alonso, J.L.; Ferrer, J.C.; Cotarelo, M.A.; Montilla, F.; Fernandez de Avila, S.

2009-01-01

An experimental study about the influence of the thickness of electrochemically deposited polyaniline (PANI), used as hole-transporting layer, on the behaviour of polymer light emitting diodes is presented. Two sets of devices with a different conjugated polymer used as active layer were prepared. Poly(9-vinylcarbazole) was used for the first type of devices, whereas Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene] was used for the second type. Each set consists of five polymeric diodes in which the hole-transporting layer has been varied. In one case of each set no layer was deposited, in other one a Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) layer was deposited, and in the rest of the diodes a different thickness of electrochemically deposited PANI was employed. The optic and electronic characterization of the devices show that controlling the thickness of the PANI hole transporting layer, both the maximum emission peak of the electroluminescence curves and the driving voltage could be tuned. Furthermore, an exponential behaviour has been demonstrated for the maximum intensity of the electroluminescence curves as a function of the applied excitation voltage between anode and cathode

Towards printed perovskite solar cells with cuprous oxide hole transporting layers

DEFF Research Database (Denmark)

Wang, Yan; Xia, Zhonggao; Liang, Jun

2015-01-01

Solution-processed p-type metal oxide materials have shown great promise in improving the stability of perovskite-based solar cells and offering the feasibility for a low cost printing fabrication process. Herein, we performed a device modeling study on planar perovskite solar cells with cuprous...... oxide (Cu2O) hole transporting layers (HTLs) by using a solar cell simulation program, wxAMPS. The performance of a Cu2O/perovskite solar cell was correlated to the material properties of the Cu2O HTL, such as thickness, carrier mobility, mid-gap defect, and doping...

Influence of hole transport material/metal contact interface on perovskite solar cells

Science.gov (United States)

Lei, Lei; Zhang, Shude; Yang, Songwang; Li, Xiaomin; Yu, Yu; Wei, Qingzhu; Ni, Zhichun; Li, Ming

2018-06-01

Interfaces have a significant impact on the performance of perovskite solar cells. This work investigated the influence of hole transport material/metal contact interface on photovoltaic behaviours of perovskite solar devices. Different hole material/metal contact interfaces were obtained by depositing the metal under different conditions. High incident kinetic energy metal particles were proved to penetrate and embed into the hole transport material. These isolated metal particles in hole transport materials capture holes and increase the apparent carrier transport resistance of the hole transport layer. Sample temperature was found to be of great significance in metal deposition. Since metal vapour has a high temperature, the deposition process accumulated a large amount of heat. The heat evaporated the additives in the hole transport layer and decreased the hole conductivity. On the other hand, high temperature may cause iodization of the metal contact.

Enhancing Photovoltaic Performance of Inverted Planar Perovskite Solar Cells by Cobalt-Doped Nickel Oxide Hole Transport Layer.

Science.gov (United States)

Xie, Yulin; Lu, Kai; Duan, Jiashun; Jiang, Youyu; Hu, Lin; Liu, Tiefeng; Zhou, Yinhua; Hu, Bin

2018-04-25

Electron and hole transport layers have critical impacts on the overall performance of perovskite solar cells (PSCs). Herein, for the first time, a solution-processed cobalt (Co)-doped NiO X film was fabricated as the hole transport layer in inverted planar PSCs, and the solar cells exhibit 18.6% power conversion efficiency. It has been found that an appropriate Co-doping can significantly adjust the work function and enhance electrical conductivity of the NiO X film. Capacitance-voltage ( C- V) spectra and time-resolved photoluminescence spectra indicate clearly that the charge accumulation becomes more pronounced in the Co-doped NiO X -based photovoltaic devices; it, as a consequence, prevents the nonradiative recombination at the interface between the Co-doped NiO X and the photoactive perovskite layers. Moreover, field-dependent photoluminescence measurements indicate that Co-doped NiO X -based devices can also effectively inhibit the radiative recombination process in the perovskite layer and finally facilitate the generation of photocurrent. Our work indicates that Co-doped NiO X film is an excellent candidate for high-performance inverted planar PSCs.

Thermally Cross-Linkable Hole Transport Materials for Solution Processed Phosphorescent OLEDs

Science.gov (United States)

Kim, Beom Seok; Kim, Ohyoung; Chin, Byung Doo; Lee, Chil Won

2018-04-01

Materials for unique fabrication of a solution-processed, multi-layered organic light-emitting diode (OLED) were developed. Preparation of a hole transport layer with a thermally cross-linkable chemical structure, which can be processed to form a thin film and then transformed into an insoluble film by using an amine-alcohol condensation reaction with heat treatment, was investigated. Functional groups, such as triplenylamine linked with phenylcarbazole or biphenyl, were employed in the chemical structure of the hole transport layer in order to maintain high triplet energy properties. When phenylcarbazole or biphenyl compounds continuously react with triphenylamine under acid catalysis, a chemically stable thin film material with desirable energy-level properties for a blue OLED could be obtained. The prepared hole transport materials showed excellent surface roughness and thermal stability in comparison with the commercial reference material. On the solution-processed model hole transport layer, we fabricated a device with a blue phosphorescent OLED by using sequential vacuum deposition. The maximum external quantum, 19.3%, was improved by more than 40% over devices with the commercial reference material (11.4%).

Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics

KAUST Repository

Yuan, Zhongcheng

2015-11-01

Abstract Layered bismuth selenide (L-Bi2Se3) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi2Se3 showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO3 using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi2Se3. The work function of L-Bi2Se3 increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi2Se3 exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs. © 2015 Elsevier B.V.

All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer

Directory of Open Access Journals (Sweden)

Jiahui Li

2016-10-01

Full Text Available All-inorganic quantum dot light emitting diodes (QLEDs have gained great attention as a result of their high stability under oxygen-rich, humid and high current working conditions. In this work, we have fabricated an all-inorganic QLED device (FTO/NiO/QDs/AZO/Ag with sandwich-structure, wherein the inorganic metal oxides thin films of NiO and AZO were employed as hole and electron transport layers, respectively. The porous NiO layer with vertical lamellar nanosheets interconnected microstructure have been directly synthesized on the substrate of conductive FTO glass and increased the wettability of CdSe@ZnS QDs, which result in an enhancement of current transport performance of the QLED.

Slot-Die-Coated V2O5 as Hole Transport Layer for Flexible Organic Solar Cells and Optoelectronic Devices

DEFF Research Database (Denmark)

Beliatis, Michail; Helgesen, Martin; Garcia Valverde, Rafael

2016-01-01

Vanadium pentoxide has been proposed as a good alternative hole transport layer for improving device lifetime of organic photovoltaics. The article presents a study on the optimization of slot-die-coated vanadium oxide films produced with a roll coating machine with the aim of achieving scalable ...

Flexible ITO-free organic solar cells applying aqueous solution-processed V2O5 hole transport layer: An outdoor stability study

Directory of Open Access Journals (Sweden)

F. Anderson S. Lima

2016-02-01

Full Text Available Solution processable semiconductor oxides have opened a new paradigm for the enhancement of the lifetime of thin film solar cells. Their fabrication by low-cost and environmentally friendly solution-processable methods makes them ideal barrier (hole and electron transport layers. In this work, we fabricate flexible ITO-free organic solar cells (OPV by printing methods applying an aqueous solution-processed V2O5 as the hole transport layer (HTL and compared them to devices applying PEDOT:PSS. The transparent conducting electrode was PET/Ag/PEDOT/ZnO, and the OPV configuration was PET/Ag/PEDOT/ZnO/P3HT:PC60BM/HTL/Ag. Outdoor stability analyses carried out for more than 900 h revealed higher stability for devices fabricated with the aqueous solution-processed V2O5.

Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers

Science.gov (United States)

Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Hara, K. O.; Toko, K.; Usami, N.; Suemasu, T.

2015-03-01

Heterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoOx, x < 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5 mA/cm2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of -1 V reached 25 mA/cm2, which demonstrates the significant potential of BaSi2 for solar cell applications.

Hole-transport material variation in fully vacuum deposited perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Polander, Lauren E.; Pahner, Paul; Schwarze, Martin; Saalfrank, Matthias; Koerner, Christian; Leo, Karl, E-mail: karl.leo@iapp.de [Institut für Angewandte Photophysik, Technische Universität Dresden, 01069 Dresden (Germany)

2014-08-01

This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH{sub 3}NH{sub 3}PbI{sub x−3}Cl{sub x} perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase versus this reference.

Hole-transport material variation in fully vacuum deposited perovskite solar cells

Directory of Open Access Journals (Sweden)

Lauren E. Polander

2014-08-01

Full Text Available This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH3NH3PbIx−3Clx perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase versus this reference.

Heterojunction PbS nanocrystal solar cells with oxide charge-transport layers.

Science.gov (United States)

Hyun, Byung-Ryool; Choi, Joshua J; Seyler, Kyle L; Hanrath, Tobias; Wise, Frank W

2013-12-23

Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Room-temperature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures.

Simulation of hole-mobility in doped relaxed and strained Ge layers

Science.gov (United States)

Watling, Jeremy R.; Riddet, Craig; Chan, Morgan Kah H.; Asenov, Asen

2010-11-01

As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limits of their performance with scaling, alternative channel materials are being considered to maintain performance in future complementary metal-oxide semiconductor technology generations. Thus there is renewed interest in employing Ge as a channel material in p-MOSFETs, due to the significant improvement in hole mobility as compared to Si. Here we employ full-band Monte Carlo to study hole transport properties in Ge. We present mobility and velocity-field characteristics for different transport directions in p-doped relaxed and strained Ge layers. The simulations are based on a method for over-coming the potentially large dynamic range of scattering rates, which results from the long-range nature of the unscreened Coulombic interaction. Our model for ionized impurity scattering includes the affects of dynamic Lindhard screening, coupled with phase-shift, and multi-ion corrections along with plasmon scattering. We show that all these effects play a role in determining the hole carrier transport in doped Ge layers and cannot be neglected.

Flexible ITO-free organic solar cells applying aqueous solution-processed V2O5 hole transport layer: An outdoor stability study

DEFF Research Database (Denmark)

Lima, F. Anderson S.; Beliatis, Michail J.; Roth, Bérenger

2016-01-01

Solution processable semiconductor oxides have opened a new paradigm for theenhancement of the lifetime of thin film solar cells. Their fabrication by low-costand environmentally friendly solution-processable methods makes them ideal barrier(hole and electron) transport layers. In this work, we f...

High-performance inverted planar heterojunction perovskite solar cells based on a solution-processed CuOx hole transport layer.

Science.gov (United States)

Sun, Weihai; Li, Yunlong; Ye, Senyun; Rao, Haixia; Yan, Weibo; Peng, Haitao; Li, Yu; Liu, Zhiwei; Wang, Shufeng; Chen, Zhijian; Xiao, Lixin; Bian, Zuqiang; Huang, Chunhui

2016-05-19

During the past several years, methylammonium lead halide perovskites have been widely investigated as light absorbers for thin-film photovoltaic cells. Among the various device architectures, the inverted planar heterojunction perovskite solar cells have attracted special attention for their relatively simple fabrication and high efficiencies. Although promising efficiencies have been obtained in the inverted planar geometry based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) sulfonic acid ( PSS) as the hole transport material (HTM), the hydrophilicity of the PSS is a critical factor for long-term stability. In this paper, a CuOx hole transport layer from a facile solution-processed method was introduced into the inverted planar heterojunction perovskite solar cells. After the optimization of the devices, a champion PCE of 17.1% was obtained with an open circuit voltage (Voc) of 0.99 V, a short-circuit current (Jsc) of 23.2 mA cm(-2) and a fill factor (FF) of 74.4%. Furthermore, the unencapsulated device cooperating with the CuOx film exhibited superior performance in the stability test, compared to the device involving the PSS layer, indicating that CuOx could be a promising HTM for replacing PSS in inverted planar heterojunction perovskite solar cells.

Heterojunction PbS Nanocrystal Solar Cells with Oxide Charge-Transport Layers

KAUST Repository

Hyun, Byung-Ryool

2013-12-23

Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Roomerature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures. © 2013 American Chemical Society.

Copper (I) Selenocyanate (CuSeCN) as a Novel Hole-Transport Layer for Transistors, Organic Solar Cells, and Light-Emitting Diodes

KAUST Repository

Wijeyasinghe, Nilushi; Tsetseris, Leonidas; Regoutz, Anna; Sit, Wai-Yu; Fei, Zhuping; Du, Tian; Wang, Xuhua; McLachlan, Martyn A.; Vourlias, George; Patsalas, Panos A.; Payne, David J.; Heeney, Martin; Anthopoulos, Thomas D.

2018-01-01

The synthesis and characterization of copper (I) selenocyanate (CuSeCN) and its application as a solution-processable hole-transport layer (HTL) material in transistors, organic light-emitting diodes, and solar cells are reported. Density-functional theory calculations combined with X-ray photoelectron spectroscopy are used to elucidate the electronic band structure, density of states, and microstructure of CuSeCN. Solution-processed layers are found to be nanocrystalline and optically transparent (>94%), due to the large bandgap of ≥3.1 eV, with a valence band maximum located at −5.1 eV. Hole-transport analysis performed using field-effect measurements confirms the p-type character of CuSeCN yielding a hole mobility of 0.002 cm2 V−1 s−1. When CuSeCN is incorporated as the HTL material in organic light-emitting diodes and organic solar cells, the resulting devices exhibit comparable or improved performance to control devices based on commercially available poly(3,4-ethylenedioxythiophene):polystyrene sulfonate as the HTL. This is the first report on the semiconducting character of CuSeCN and it highlights the tremendous potential for further developments in the area of metal pseudohalides.

Copper (I) Selenocyanate (CuSeCN) as a Novel Hole-Transport Layer for Transistors, Organic Solar Cells, and Light-Emitting Diodes

KAUST Repository

Wijeyasinghe, Nilushi

2018-02-01

The synthesis and characterization of copper (I) selenocyanate (CuSeCN) and its application as a solution-processable hole-transport layer (HTL) material in transistors, organic light-emitting diodes, and solar cells are reported. Density-functional theory calculations combined with X-ray photoelectron spectroscopy are used to elucidate the electronic band structure, density of states, and microstructure of CuSeCN. Solution-processed layers are found to be nanocrystalline and optically transparent (>94%), due to the large bandgap of ≥3.1 eV, with a valence band maximum located at −5.1 eV. Hole-transport analysis performed using field-effect measurements confirms the p-type character of CuSeCN yielding a hole mobility of 0.002 cm2 V−1 s−1. When CuSeCN is incorporated as the HTL material in organic light-emitting diodes and organic solar cells, the resulting devices exhibit comparable or improved performance to control devices based on commercially available poly(3,4-ethylenedioxythiophene):polystyrene sulfonate as the HTL. This is the first report on the semiconducting character of CuSeCN and it highlights the tremendous potential for further developments in the area of metal pseudohalides.

Polyethers containing 4-(carbazol-2-yl)-7-arylbenzo[c]-1,2,5-thiadiazole chromophores as solution processed materials for hole transporting layers of OLEDs

Science.gov (United States)

Krucaite, G.; Tavgeniene, D.; Xie, Z.; Lin, X.; Zhang, B.; Grigalevicius, S.

2018-02-01

Two polyethers containing electroactive pendent 4-(carbazol-2-yl)-7-arylbenzo[c]-1,2,5-thiadiazole moieties have been synthesized by the multi-step synthetic route. Full characterization of their structures is presented. The polymers represent derivatives of very high thermal stability with initial thermal degradation temperatures of 425 °C and 431 °C. Glass transition temperatures of the amorphous materials were also very high and reached values of 154 °C and 163 °C. The electron photoemission spectra of thin layers of the polymers showed ionization potentials of 5.84 eV and 5.93 eV. Hole-transporting properties of the polymeric materials were tested in the structures of organic light emitting diodes with Alq3 as the green emitter and electron transporting material. An electroluminescent device containing hole-transporting layer (HTL) of the polymer with electroactive 4-carbazolyl-7-phenylbenzo[c]-1,2,5-thiadiazole moieties exhibited turn on voltage of 6.2 V, maximum photometric efficiency of 2.5 cd/A and maximum brightness exceeding 300 cd/m2. The device containing HTL of the polymer with 4-carbazolyl-7-(1-naphtyl)benzo[c]-1,2,5-thiadiazole moieties demonstrated turn on voltage of 5.2 V, maximum photometric efficiency of 1.6 cd/A and maximum brightness exceeding 1500 cd/m2. The efficiencies were about 30-90% higher than that of the device containing widely used hole transporting layers of poly(9-vinylcarbazole).

Improved Efficiency of Polymer Solar Cells by means of Coating Hole Transporting Layer as Double Layer Deposition

Science.gov (United States)

Chonsut, T.; Kayunkid, N.; Rahong, S.; Rangkasikorn, A.; Wirunchit, S.; Kaewprajak, A.; Kumnorkaew, P.; Nukeaw, J.

2017-09-01

Polymer solar cells is one of the promising technologies that gain tremendous attentions in the field of renewable energy. Optimization of thickness for each layer is an important factor determining the efficiency of the solar cells. In this work, the optimum thickness of Poly(3,4-ethylenedioxythione): poly(styrenesulfonate) (PEDOT:PSS), a famous polymer widely used as hole transporting layer in polymer solar cells, is determined through the analyzing of device’s photovoltaic parameters, e.g. short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF) as well as power conversion efficiency (PCE). The solar cells were prepared with multilayer of ITO/PEDOT:PSS/PCDTBT:PC70BM/TiOx/Al by rapid convective deposition. In such preparation technique, the thickness of the thin film is controlled by the deposition speed. The faster deposition speed is used, the thicker film is obtained. Furthermore, double layer deposition of PEDOT:PSS was introduced as an approach to improve solar cell efficiency. The results obviously reveal that, with the increase of PEDOT:PSS thickness, the increments of Jsc and FF play the important role to improve PCE from 3.21% to 4.03%. Interestingly, using double layer deposition of PEDOT:PSS shows the ability to enhance the performance of the solar cells to 6.12% under simulated AM 1.5G illumination of 100 mW/cm2.

Improvement of the photovoltaic parameters of perovskite solar cells using a reduced-graphene-oxide-modified titania layer and soluble copper phthalocyanine as a hole transporter.

Science.gov (United States)

Nouri, Esmaiel; Mohammadi, Mohammad Reza; Xu, Zong-Xiang; Dracopoulos, Vassilios; Lianos, Panagiotis

2018-01-24

Functional perovskite solar cells can be made by using a simple, inexpensive and stable soluble tetra-n-butyl-substituted copper phthalocyanine (CuBuPc) as a hole transporter. In the present study, TiO 2 /reduced graphene oxide (T/RGO) hybrids were synthesized via an in situ solvothermal process and used as electron acceptor/transport mediators in mesoscopic perovskite solar cells based on soluble CuBuPc as a hole transporter and on graphene oxide (GO) as a buffer layer. The impact of the RGO content on the optoelectronic properties of T/RGO hybrids and on the solar cell performance was studied, suggesting improved electron transport characteristics and photovoltaic parameters. An enhanced electron lifetime and recombination resistance led to an increase in the short circuit current density, open circuit voltage and fill factor. The device based on a T/RGO mesoporous layer with an optimal RGO content of 0.2 wt% showed 22% higher photoconversion efficiency and higher stability compared with pristine TiO 2 -based devices.

Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene

OpenAIRE

Han, Wei; Wang, W. H.; Pi, K.; McCreary, K. M.; Bao, W.; Li, Yan; Miao, F.; Lau, C. N.; Kawakami, R. K.

2009-01-01

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic/nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the non-local MR reveal an electron-hole asymmetry in which the non-...

Molecular Doping of the Hole-Transporting Layer for Efficient, Single-Step Deposited Colloidal Quantum Dot Photovoltaics

KAUST Repository

Kirmani, Ahmad R.

2017-07-31

Employment of thin perovskite shells and metal halides as surface-passivants for colloidal quantum dots (CQDs) have been important, recent developments in CQD optoelectronics. These have opened the route to single-step deposited high-performing CQD solar cells. These promising architectures employ a QD hole-transporting layer (HTL) whose intrinsically shallow Fermi level (EF) restricts band-bending at maximum power-point during solar cell operation limiting charge collection. Here, we demonstrate a generalized approach to effectively balance band-edge energy levels of the main CQD absorber and charge-transport layer for these high-performance solar cells. Briefly soaking the QD HTL in a solution of the metal-organic p-dopant, molybdenum tris(1-(trifluoroacetyl)-2-(trifluoromethyl)ethane-1,2-dithiolene), effectively deepens its Fermi level, resulting in enhanced band bending at the HTL:absorber junction. This blocks the back-flow of photo-generated electrons, leading to enhanced photocurrent and fill factor compared to undoped devices. We demonstrate 9.0% perovskite-shelled and 9.5% metal-halide-passivated CQD solar cells, both achieving ca. 10% relative enhancements over undoped baselines.

Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

KAUST Repository

Wijeyasinghe, Nilushi; Regoutz, Anna; Eisner, Flurin; Du, Tian; Tsetseris, Leonidas; Lin, Yen-Hung; Faber, Hendrik; Pattanasattayavong, Pichaya; Li, Jinhua; Yan, Feng; McLachlan, Martyn A.; Payne, David J.; Heeney, Martin; Anthopoulos, Thomas D.

2017-01-01

spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl

Synthesis and properties of a spirobifluorene-based hole-transporting material containingtert-butyl group

Directory of Open Access Journals (Sweden)

DING Ning

2016-12-01

Full Text Available A spirobifluorene-based compound SPF-BMO was developed as hole transporters for green phosphorescent organic light-emitting diodes(PhOLEDs.The synthesized material showed sufficient HOMO/LUMO bandgap and triplet energy for green emitting bis［2-(2-pyridinyl-Nphenyl-C］ (acetylacetonato iridium(III ［Ir (ppy2(acac］.The addition of a thin layer of 4,4′,4″-tri(N-carbazolyltriphenylamine (TCTAwith a high triplet energy as an exciton-blockinglayer at hole transporter/emitter interface seems to be unnecessary.SPF-BMO showed high thermal stability due to its spiro-annulated structure.Compared with the standard green PhOLEDs,organic light-emitting diodes with SPF-BMO as the hole-transport material have improved performances such as enhanced device power efficiency andlonger stability.These results clearly demonstrate that SPF-BMO is among the best hole-transporting materials reported for green PhOLEDs and utilizing anappropriate hole transporter to construct a simplified device is a promising method to enhance the power efficiency of PhOLEDs.

Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

Science.gov (United States)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

Hole transport in c-plane InGaN-based green laser diodes

Energy Technology Data Exchange (ETDEWEB)

Cheng, Yang; Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn; Tian, Aiqin; Zhang, Feng; Feng, Meixin; Hu, Weiwei; Zhang, Shuming; Ikeda, Masao; Li, Deyao; Zhang, Liqun; Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123 (China)

2016-08-29

Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

Architecture of the Interface between the Perovskite and Hole-Transport Layers in Perovskite Solar Cells.

Science.gov (United States)

Moriya, Masahiro; Hirotani, Daisuke; Ohta, Tsuyoshi; Ogomi, Yuhei; Shen, Qing; Ripolles, Teresa S; Yoshino, Kenji; Toyoda, Taro; Minemoto, Takashi; Hayase, Shuzi

2016-09-22

The interface between the perovskite (PVK, CH 3 NH 3 PbI 3 ) and hole-transport layers in perovskite solar cells is discussed. The device architecture studied is as follows: F-doped tin oxide (FTO)-coated glass/compact TiO 2 /mesoporous TiO 2 /PVK/2,2',7,7'-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (Spiro-MeOTAD)/Au. After a thin layer of 4,4,4-trifluorobutylammonium iodide (TFBA) was inserted at the interface between PVK and Spiro-MeOTAD, the photovoltaic efficiency increased from 11.6-14.5 % to 15.1-17.6 %. TFBA (10 ppm) was added in the PVK solution before coating. Owing to the low surface tension of TFBA, TFBA rose to the surface of the PVK layer spontaneously during spin-coating to make a thin organic layer. The PVK grain boundaries also seemed to be passivated with the addition of TFBA. However, large differences in Urbach energies and valence band energy level were not observed for the PVK layer with and without the addition of TFBA. The charge recombination time constant between the PVK and the Spiro-MeOTAD became slower (from 8.4 to 280 μsec) after 10 ppm of TFBA was added in the PVK. The experimental results using TFBA conclude that insertion of a very thin layer at the interface between PVK and Spiro-MeOTAD is effective for suppressing charge recombination and increasing photovoltaic performances. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Organic light-emitting diodes with F16CuPC as an efficient hole-injection layer

International Nuclear Information System (INIS)

Lee, H. K.; Shin, Y. C.; Kwon, D. S.; Lee, C. H.

2006-01-01

We report a new hole-injection material, copper hexadecafluorophthalocyanine (F 16 CuPC) for organic light-emitting diodes (OLEDs) consisting of N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD) as a hole-transport layer and 8-tris-hydroxyquinoline aluminum (Alq 3 ) as a light-emitting and electron-transport layer. The insertion of the F 16 CuPC between indium-tin oxide (ITO) and α-NPD reduces the operating voltage significantly and thereby increases the luminous efficiency. By measuring the device characteristics for various F 16 CuPC thicknesses, we find that an optimum F 16 CuPC thickness is about 15 nm. At a luminance of 1000 cd/m 2 , the device with 15-nm-thick F 16 CuPC shows a luminous efficiency of 1.5 lm/W and a device operating voltage of 7.2 V while the device without the F 16 CuPC layer shows 1.1 lm/W and 10.4 V. The significant decrease in a driving voltage and increase in the luminous efficiency can be attributed to the high hole-injection efficiency when F 16 CuPC is inserted between ITO and α-NPD.

Cuprous Oxide as a Potential Low-Cost Hole-Transport Material for Stable Perovskite Solar Cells.

Science.gov (United States)

Nejand, Bahram Abdollahi; Ahmadi, Vahid; Gharibzadeh, Saba; Shahverdi, Hamid Reza

2016-02-08

Inorganic hole-transport materials are commercially desired to decrease the fabrication cost of perovskite solar cells. Here, Cu2O is introduced as a potential hole-transport material for stable, low-cost devices. Considering that Cu2O formation is highly sensitive to the underlying mixture of perovskite precursors and their solvents, we proposed and engineered a technique for reactive magnetron sputtering. The rotational angular deposition of Cu2O yields high surface coverage of the perovskite layer for high rate of charge extraction. Deposition of this Cu2O layer on the pinhole-free perovskite layer produces devices with power conversion efficiency values of up to 8.93%. The engineered Cu2O layers showed uniform, compact, and crack-free surfaces on the perovskite layer without affecting the perovskite structure, which is desired for deposition of the top metal contact and for surface shielding against moisture and mechanical damages. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Charge-transport anisotropy in black phosphorus: critical dependence on the number of layers.

Science.gov (United States)

Banerjee, Swastika; Pati, Swapan K

2016-06-28

Phosphorene is a promising candidate for modern electronics because of the anisotropy associated with high electron-hole mobility. Additionally, superior mechanical flexibility allows the strain-engineering of various properties including the transport of charge carriers in phosphorene. In this work, we have shown the criticality of the number of layers to dictate the transport properties of black phosphorus. Trilayer black phosphorus (TBP) has been proposed as an excellent anisotropic material, based on the transport parameters using Boltzmann transport formalisms coupled with density functional theory. The mobilities of both the electron and the hole are found to be higher along the zigzag direction (∼10(4) cm(2) V(-1) s(-1) at 300 K) compared to the armchair direction (∼10(2) cm(2) V(-1) s(-1)), resulting in the intrinsic directional anisotropy. Application of strain leads to additional electron-hole anisotropy with 10(3) fold higher mobility for the electron compared to the hole. Critical strain for maximum anisotropic response has also been determined. Whether the transport anisotropy is due to the spatial or charge-carrier has been determined through analyses of the scattering process of electrons and holes, and their recombination as well as relaxation dynamics. In this context, we have derived two descriptors (S and F(k)), which are general enough for any 2D or quasi-2D systems. Information on the scattering involving purely the carrier states also helps to understand the layer-dependent photoluminescence and electron (hole) relaxation in black phosphorus. Finally, we justify trilayer black phosphorus (TBP) as the material of interest with excellent transport properties.

Simulation of perovskite solar cells with inorganic hole transporting materials

DEFF Research Database (Denmark)

Wang, Yan; Xia, Zhonggao; Liu, Yiming

2015-01-01

Device modeling organolead halide perovskite solar cells with planar architecture based on inorganic hole transporting materials (HTMs) were performed. A thorough understanding of the role of the inorganic HTMs and the effect of band offset between HTM/absorber layers is indispensable for further...... improvement in power conversion efficiency (PCE). Here, we investigated the effect of band offset between inorganic HTM/absorber layers. The solar cell simulation program adopted in this work is named wxAMPS, an updated version of the AMPS tool (Analysis of Microelectronic and Photonic Structure)....

PEDOT: PSS: rGO nanocomposite as a hole transport layer (HTLs) for P3HT:PCBM based organic solar cells

Science.gov (United States)

Tiwari, D. C.; Dwivedi, Shailendra Kumar; Dipak, Pukhrambam; Chandel, Tarun

2018-05-01

This paper reports the fabrication process of organic solar cell (OSCs) having structure ITO/PEDOT:PSS:rGO/P3HT:PCBM/Al. In this cell, poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT: PSS) is ultrasonically mixed with thermally reduced graphene oxide (rGO), which was used as a hole transport layer (HTLs). In order to investigate structural, morphological and optical properties of nanocomposite, XRD, FE-SEM and UV-vis spectroscopy were carried out. We have observed, Jsc = 6.5mA/cm2, Voc = 212 mV, FF=0.31 and PCE of 0.43% from fabricated organic solar cell.

Oxasmaragdyrins as New and Efficient Hole-Transporting Materials for High-Performance Perovskite Solar Cells.

Science.gov (United States)

Mane, Sandeep B; Sutanto, Albertus Adrian; Cheng, Chih-Fu; Xie, Meng-Yu; Chen, Chieh-I; Leonardus, Mario; Yeh, Shih-Chieh; Beyene, Belete Bedemo; Diau, Eric Wei-Guang; Chen, Chin-Ti; Hung, Chen-Hsiung

2017-09-20

The high performance of the perovskite solar cells (PSCs) cannot be achieved without a layer of efficient hole-transporting materials (HTMs) to retard the charge recombination and transport the photogenerated hole to the counterelectrode. Herein, we report the use of boryl oxasmaragdyrins (SM01, SM09, and SM13), a family of aromatic core-modified expanded porphyrins, as efficient hole-transporting materials (HTMs) for perovskite solar cells (PSCs). These oxasmaragdyrins demonstrated complementary absorption spectra in the low-energy region, good redox reversibility, good thermal stability, suitable energy levels with CH 3 NH 3 PbI 3 perovskite, and high hole mobility. A remarkable power conversion efficiency of 16.5% (V oc = 1.09 V, J sc = 20.9 mA cm -2 , fill factor (FF) = 72%) is achieved using SM09 on the optimized PSCs device employing a planar structure, which is close to that of the state-of-the-art hole-transporting materials (HTMs), spiro-OMeTAD of 18.2% (V oc = 1.07 V, J sc = 22.9 mA cm -2 , FF = 74%). In contrast, a poor photovoltaic performance of PSCs using SM01 is observed due to the interactions of terminal carboxylic acid functional group with CH 3 NH 3 PbI 3 .

Rational Design of Molecular Hole-Transporting Materials for Perovskite Solar Cells: Direct versus Inverted Device Configurations.

Science.gov (United States)

Grisorio, Roberto; Iacobellis, Rosabianca; Listorti, Andrea; De Marco, Luisa; Cipolla, Maria Pia; Manca, Michele; Rizzo, Aurora; Abate, Antonio; Gigli, Giuseppe; Suranna, Gian Paolo

2017-07-26

Due to a still limited understanding of the reasons making 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-OMeTAD) the state-of-the-art hole-transporting material (HTM) for emerging photovoltaic applications, the molecular tailoring of organic components for perovskite solar cells (PSCs) lacks in solid design criteria. Charge delocalization in radical cationic states can undoubtedly be considered as one of the essential prerequisites for an HTM, but this aspect has been investigated to a relatively minor extent. In marked contrast with the 3-D structure of Spiro-OMeTAD, truxene-based HTMs Trux1 and Trux2 have been employed for the first time in PSCs fabricated with a direct (n-i-p) or inverted (p-i-n) architecture, exhibiting a peculiar behavior with respect to the referential HTM. Notwithstanding the efficient hole extraction from the perovskite layer exhibited by Trux1 and Trux2 in direct configuration devices, their photovoltaic performances were detrimentally affected by their poor hole transport. Conversely, an outstanding improvement of the photovoltaic performances in dopant-free inverted configuration devices compared to Spiro-OMeTAD was recorded, ascribable to the use of thinner HTM layers. The rationalization of the photovoltaic performances exhibited by different configuration devices discussed in this paper can provide new and unexpected prospects for engineering the interface between the active layer of perovskite-based solar cells and the hole transporters.

Improved efficiency of NiOx-based p-i-n perovskite solar cells by using PTEG-1 as electron transport layer

Science.gov (United States)

Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta

2017-07-01

We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to perovskite solar cells with PCBM (phenyl-C61-butyric acid methyl ester). The improved performance of PTEG-1 devices is attributed to the reduced trap-assisted recombination and improved charge extraction in these solar cells, as determined by light intensity dependence and photoluminescence measurements. Through optimization of the hole and electron transport layers, the power conversion efficiency of the NiOx/perovskite/PTEG-1 solar cells was increased up to 16.1%.

Nondispersive hole transport in a spin-coated dendrimer film measured by the charge-generation-layer time-of-flight method

Science.gov (United States)

Markham, Jonathan P. J.; Anthopoulos, Thomas D.; Samuel, Ifor D. W.; Richards, Gary J.; Burn, Paul L.; Im, Chan; Bassler, Heinz

2002-10-01

Measurements of the mobility of a first-generation (G1) bis-fluorene cored dendrimer have been performed on spin-coated samples of 500 nm thickness using the charge-generation-layer time-of-flight (TOF) technique. A 10 nm perylene charge generation layer was excited by the 532 nm line of a Q-switched Nd:YAG laser and the generated carriers swept through the dendrimer film under an applied field. We observe nondispersive hole transport in the dendrimer layer with a room-temperature mobility mu=2.0 x10-4 cm2/V s at a field of 0.55 MV/cm. There is a weak field dependence of the mobility and it increases from mu=1.6 x10-4 cm2/V s at 0.2 MV/cm to mu=3.0 x10-4 cm2/V s at 1.4 MV/cm. These results suggest that the measurement of mobility by TOF in spin-coated samples on thickness scales relevant to organic light-emitting diodes can yield valuable information, and that dendrimers are promising materials for device applications.

Topological transport from a black hole

Directory of Open Access Journals (Sweden)

Dmitry Melnikov

2018-03-01

Full Text Available In this paper the low temperature zero-frequency transport in a 2+1-dimensional theory dual to a dyonic black hole is discussed. It is shown that transport exhibits topological features: the transverse electric and heat conductivities satisfy the Wiedemann–Franz law of free electrons; the direct heat conductivity is measured in units of the central charge of CFT2+1, while the direct electric conductivity vanishes; the thermoelectric conductivity is non-zero at vanishing temperature, while the O(T behavior, controlled by the Mott relation, is subleading. Provided that the entropy of the black hole, and the dual system, is non-vanishing at T=0, the observations indicate that the dyonic black hole describes a ħ→0 limit of a highly degenerate topological state, in which the black hole charge measures the density of excited non-abelian quasiparticles. The holographic description gives further evidence that non-abelian nature of quasiparticles can be determined by the low temperature behavior of the thermoelectric transport.

Sol-gel-processed yttrium-doped NiO as hole transport layer in inverted perovskite solar cells for enhanced performance

Science.gov (United States)

Hu, Zijun; Chen, Da; Yang, Pan; Yang, Lijun; Qin, Laishun; Huang, Yuexiang; Zhao, Xiaochong

2018-05-01

In this work, high-performance inverted planar perovskite solar cells (PSCs) using sol-gel processed Y-doped NiO thin films as hole transport layer (HTL) were demonstrated. Y-doped NiO thin films containing different Y doping concentrations were successfully prepared through a simple sol-gel process. The Y doping could significantly improve the electrical conductivity of NiO thin film, and the photovoltaic performance of Y-doped NiO HTL-based PSC devices outperformed that of the pristine NiO HTL-based device. Notably, the PSC using a 5%Y-NiO HTL exhibited the champion performance with an open-circuit voltage (Voc) of 1.00 V, a short circuit current density (Jsc) of 23.82 mA cm-2, a fill factor (FF) of 68% and a power conversion efficiency (PCE) of 16.31%, resulting in a 27.62% enhancement in PCE in comparison with the NiO device. The enhanced performance of the Y-doped NiO device could be attributed to the improved hole mobility, the high quality compact active layer morphology, the more efficient charge extraction from perovskite absorber as well as the lower recombination probability of charge carriers. Thus, this work provides a simple and effective approach to improve the electrical conductivity of p-type NiO thin films for use as a promising HTL in high performance PSCs.

Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

KAUST Repository

Wijeyasinghe, Nilushi

2017-07-28

This study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin-cast in air and annealed at 100 °C. X-ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high-resolution valence band spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm2 V−1 s−1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous-processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous-processed CuSCN-based cells consistently outperform devices based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous-based synthetic route that is compatible with high-throughput manufacturing and paves the way for further developments.

Improved efficiency of NiOx-based p-i-n perovskite solar cells by using PTEG-1 as electron transport layer

NARCIS (Netherlands)

Groeneveld, Bart G. H. M.; Najafi, Mehrdad; Steensma, Bauke; Adjokatse, Sampson; Fang, Hong-Hua; Jahani, Fatemeh; Qiu, Li; ten Brink, Gert H.; Hummelen, Jan C.; Loi, Maria Antonietta

We present efficient p-i-n type perovskite solar cells using NiOx as the hole transport layer and a fulleropyrrolidine with a triethylene glycol monoethyl ether side chain (PTEG-1) as electron transport layer. This electron transport layer leads to higher power conversion efficiencies compared to

Solution-processed inorganic copper(I) thiocyanate (CuSCN) hole transporting layers for efficient p–i–n perovskite solar cells

KAUST Repository

Zhao, Kui

2015-08-27

CuSCN is a highly transparent, highly stable, low cost and easy to solution process HTL that is proposed as a low cost replacement to existing organic and inorganic metal oxide hole transporting materials. Here, we demonstrate hybrid organic-inorganic perovskite-based p-i-n planar heterojunction solar cells using a solution-processed copper(I) thiocyanate (CuSCN) bottom hole transporting layer (HTL). CuSCN, with its high workfunction, increases the open circuit voltage (Voc) by 0.23 V to 1.06 V as compared with devices based on the well-known poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (0.83 V), resulting in a superior power conversion efficiency (PCE) of 10.8% without any notable hysteresis. Photoluminescence measurements suggest a similar efficiency of charge transfer at HTL/perovskite interface as PEDOT:PSS. However, we observe more efficient light harvesting in the presence of CuSCN at shorter wavelengths despite PEDOT:PSS being more transparent. Further investigation of the microstructure and morphology reveals differences in the crystallographic texture of the polycrystalline perovskite film, suggesting somewhat modified perovskite growth on the surface of CuSCN. The successful demonstration of the solution-processed inorganic HTL using simple and low temperature processing routes bodes well for the development of reliable and efficient flexible p-i-n perovskite modules or for integration as a front cell in hybrid tandem solar cells.

Role of 4-tert-Butylpyridine as a Hole Transport Layer Morphological Controller in Perovskite Solar Cells.

Science.gov (United States)

Wang, Shen; Sina, Mahsa; Parikh, Pritesh; Uekert, Taylor; Shahbazian, Brian; Devaraj, Arun; Meng, Ying Shirley

2016-09-14

Hybrid organic-inorganic materials for high-efficiency, low-cost photovoltaic devices have seen rapid progress since the introduction of lead based perovskites and solid-state hole transport layers. Although majority of the materials used for perovskite solar cells (PSC) are introduced from dye-sensitized solar cells (DSSCs), the presence of a perovskite capping layer as opposed to a single dye molecule (in DSSCs) changes the interactions between the various layers in perovskite solar cells. 4-tert-Butylpyridine (tBP), commonly used in PSCs, is assumed to function as a charge recombination inhibitor, similar to DSSCs. However, the presence of a perovskite capping layer calls for a re-evaluation of its function in PSCs. Using TEM (transmission electron microscopy), we first confirm the role of tBP as a HTL morphology controller in PSCs. Our observations suggest that tBP significantly improves the uniformity of the HTL and avoids accumulation of Li salt. We also study degradation pathways by using FTIR (Fourier transform infrared spectroscopy) and APT (atom probe tomography) to investigate and visualize in 3-dimensions the moisture content associated with the Li salt. Long-term effects, over 1000 h, due to evaporation of tBP have also been studied. Based on our findings, a PSC failure mechanism associated with the morphological change of the HTL is proposed. tBP, the morphology controller in HTL, plays a key role in this process, and thus this study highlights the need for additive materials with higher boiling points for consistent long-term performance of PSCs.

Two-Step Physical Deposition of a Compact CuI Hole-Transport Layer and the Formation of an Interfacial Species in Perovskite Solar Cells.

Science.gov (United States)

Gharibzadeh, Saba; Nejand, Bahram Abdollahi; Moshaii, Ahmad; Mohammadian, Nasim; Alizadeh, Amir Hossein; Mohammadpour, Rahele; Ahmadi, Vahid; Alizadeh, Abdolali

2016-08-09

A simple and practical approach is introduced for the deposition of CuI as an inexpensive inorganic hole-transport material (HTM) for the fabrication of low cost perovskite solar cells (PSCs) by gas-solid phase transformation of Cu to CuI. The method provides a uniform and well-controlled CuI layer with large grains and good compactness that prevents the direct connection between the contact electrodes. Solar cells prepared with CuI as the HTM with Au electrodes displays an exceptionally high short-circuit current density of 32 mA cm(-2) , owing to an interfacial species formed between the perovskite and the Cu resulting in a long wavelength contribution to the incident photon-to-electron conversion efficiency (IPCE), and an overall power conversion efficiency (PCE) of 7.4 %. The growth of crystalline and uniform CuI on a low roughness perovskite layer leads to remarkably high charge extraction in the cells, which originates from the high hole mobility of CuI in addition to a large number of contact points between CuI and the perovskite layer. In addition, the solvent-free method has no damaging side effect on the perovskite layer, which makes it an appropriate method for large scale applications of CuI in perovskite solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Efficient Long-Range Hole Transport Through G-Quadruplexes.

Science.gov (United States)

Wu, Jingyuan; Meng, Zhenyu; Lu, Yunpeng; Shao, Fangwei

2017-10-09

DNA offers a means of long-range charge transport for biology and electric nanodevices. Here, a series of tetra-stranded G-quadruplexes were assembled within a dendritic DNA architecture to explore oxidative charge transport (hole transport) through the G-quadruplex. Efficient charge transport was achieved over 28 Å upon UV irradiation. Over a longer G-quadruplex bridge, hole transport was escalated to a higher efficiency, which resulted in a higher yield than that of the optimal duplex DNA for charge transport, that is, the adenine tract. Efficient long-range hole transport suggests tetra-stranded G-quadruplexes, instead of an oxidation hotspot, hold better potential as an electron conduit than duplex DNA. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Planar perovskite solar cells employing copper(I) thiocyanate/N,N‧-di(1-naphthyl)-N,N‧-diphenyl-(1,1‧-biphenyl)-4,4‧-diamine bilayer structure as hole transport layers

Science.gov (United States)

Tseng, Zong-Liang; Chen, Lung-Chien

2018-02-01

Organic hole transport materials, such as N 2,N 2,N 2‧,N 2‧,N 7,N 7,N 7‧,N 7‧-octakis(4-methoxyphenyl)-9,9‧-spirobi[9H-fluorene]-2,2‧,7,7‧-tetramine (Spiro-OMeTAD), are commonly used as the hole transport materials in efficient perovskite solar cells, but the chemical synthetic procedure may increase the cost of the photovoltaic devices. On the other hand, inorganic hole transport materials, such as copper(I) thiocyanate (CuSCN) or copper(I) iodide (CuI), have potential for the manufacture of efficient and low-cost perovskite solar cells, but the performance of these devices is still imperfect. In this study, we demonstrate the use of an inorganic CuSCN and organic N,N‧-di(1-naphthyl)-N,N‧-diphenyl-(1,1‧-biphenyl)-4,4‧-diamine (NPB) hybrid bilayer as an alternative hole transport layer for planar CH3NH3PbI3 perovskite solar cells. The electronic behavior of the bilayer and the performance of the corresponding devices were discussed. As a result, the power conversion efficiency (PCE) for the best cells at AM1.5G illumination with a shadow mask was 12.3%.

High-performance and environmentally stable planar heterojunction perovskite solar cells based on a solution-processed copper-doped nickel oxide hole-transporting layer.

Science.gov (United States)

Kim, Jong H; Liang, Po-Wei; Williams, Spencer T; Cho, Namchul; Chueh, Chu-Chen; Glaz, Micah S; Ginger, David S; Jen, Alex K-Y

2015-01-27

An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

Energy Technology Data Exchange (ETDEWEB)

Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

2014-09-15

In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m{sup 2}, driving voltage was 4.4 V, and current density was 2.4 mA/cm{sup 2}. A white OLED component was then manufactured by doping red dopant [Os(bpftz){sub 2}(PPh{sub 2}Me){sub 2}] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE{sub x,y} of (0.31,0.35) at a luminance of 1000 cd/m{sup 2}, with a maximum luminance of 15,600 cd/m{sup 2} at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons.

Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

International Nuclear Information System (INIS)

Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

2014-01-01

In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m 2 , driving voltage was 4.4 V, and current density was 2.4 mA/cm 2 . A white OLED component was then manufactured by doping red dopant [Os(bpftz) 2 (PPh 2 Me) 2 ] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE x,y of (0.31,0.35) at a luminance of 1000 cd/m 2 , with a maximum luminance of 15,600 cd/m 2 at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons

Numerical simulation and experimental validation of inverted planar perovskite solar cells based on NiOx hole transport layer

Science.gov (United States)

Wei, Xiaoqing; Wang, Xian; Jiang, Hailong; Huang, Yongliang; Han, Anjun; Gao, Qi; Bian, Jiantao; Liu, Zhengxin

2017-12-01

Numerical simulation of inverted planar perovskite solar cells based on NiOx hole transport layer was performed with AMPS-1D program. The simulated device parameters were shown to agree well with our experimental work. The simulated results revealed that the device contained typical p-i-n junction configuration. The optimum thickness of the absorber, the effects of the absorber quality, the defect density of interfaces, the effects of VBO and CBO, the interface contact at front and back electrodes were analyzed. Open-circuit voltage mainly depended on the defect density in CH3NH3PbI3 layer, the recombination at HTL/CH3NH3PbI3 and ETL/CH3NH3PbI3 interface, the values of VBO and CBO, while short-circuit current mainly depended on the thickness of CH3NH3PbI3 layer. Fill factor was significantly influenced by the interface contact at front and back electrodes. Remarkably, a power conversion efficiency of 21.8% is obtained under optimised conditions. Real devices with PCE of up to 15% were obtained by initially optimizing the preparation of CH3NH3PbI3 absorber layer. Our work can provide some important guidance for device design and optimization from the considerations of both theory and experiment.

The effect of hole transporting layer in charge accumulation properties of p-i-n perovskite solar cells

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Fedros Galatopoulos

2017-07-01

Full Text Available The charge accumulation properties of p-i-n perovskite solar cells were investigated using three representative organic and inorganic hole transporting layer (HTL: (a Poly(3,4-ethylenedioxythiophene-poly(styrenesulfonate (PEDOT:PSS, Al 4083, (b copper-doped nickel oxide (Cu:NiOx, and (c Copper oxide (CuO. Through impedance spectroscopy analysis and modelling, it is shown that charge accumulation is decreased in the HTL/perovskite interface, between PEDOT:PSS to Cu:NiOx and CuO. This was indicative from the decrease in double layer capacitance (Cdl and interfacial charge accumulation capacitance (Cel, resulting in an increase to recombination resistance (Rrec, thus decreased charge recombination events between the three HTLs. Through AFM measurements, it is also shown that the reduced recombination events (followed by the increase in Rrec are also a result of increased grain size between the three HTLs, thus reduction in the grain boundary area. These charge accumulation properties of the three HTLs have resulted in an increase to the power conversion efficiency between the PEDOT:PSS (8.44%, Cu:NiOx (11.45%, and CuO (15.3%-based devices.

Prospects of e-beam evaporated molybdenum oxide as a hole transport layer for perovskite solar cells

Science.gov (United States)

Ali, F.; Khoshsirat, N.; Duffin, J. L.; Wang, H.; Ostrikov, K.; Bell, J. M.; Tesfamichael, T.

2017-09-01

Perovskite solar cells have emerged as one of the most efficient and low cost technologies for delivering of solar electricity due to their exceptional optical and electrical properties. Commercialization of the perovskite solar cells is, however, limited because of the higher cost and environmentally sensitive organic hole transport materials such as spiro-OMETAD and PEDOT:PSS. In this study, an empirical simulation was performed using the Solar Cell Capacitance Simulator software to explore the MoOx thin film as an alternative hole transport material for perovskite solar cells. In the simulation, properties of MoOx thin films deposited by the electron beam evaporation technique from high purity (99.99%) MoO3 pellets at different substrate temperatures (room temperature, 100 °C and 200 °C) were used as input parameters. The films were highly transparent (>80%) and have low surface roughness (≤2 nm) with bandgap energy ranging between 3.75 eV and 3.45 eV. Device simulation has shown that the MoOx deposited at room temperature can work in both the regular and inverted structures of the perovskite solar cell with a promising efficiency of 18.25%. Manufacturing of the full device is planned in order to utilize the MoOx as an alternative hole transport material for improved performance, good stability, and low cost of the perovskite solar cell.

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

Energy Technology Data Exchange (ETDEWEB)

Qian, L., E-mail: qian_lei@126.com; Xu, Z.; Teng, F.; Duan, X.-X. [Beijing Jiaotong University, Institute of Optoelectronic Technology (China); Jin, Z.-S.; Du, Z.-L. [Henan University, Key Laboratory on special functional materials (China); Li, F.-S.; Zheng, M.-J. [State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Department of Physics (China); Wang, Y.-S. [Beijing Jiaotong University, Institute of Optoelectronic Technology (China)

2007-06-15

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)-p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

Science.gov (United States)

Qian, L.; Xu, Z.; Teng, F.; Duan, X.-X.; Jin, Z.-S.; Du, Z.-L.; Li, F.-S.; Zheng, M.-J.; Wang, Y.-S.

2007-06-01

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)- p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.

Thermally and electrochemically stable amorphous hole-transporting materials based on carbazole dendrimers for electroluminescent devices

International Nuclear Information System (INIS)

Promarak, Vinich; Ichikawa, Musubu; Sudyoadsuk, Taweesak; Saengsuwan, Sayant; Jungsuttiwong, Siriporn; Keawin, Tinnagon

2008-01-01

Amorphous hole-transporting carbazole dendrimers, 1,4-bis[3,6-di(carbazol-9-yl)carbazol-9-yl]-2,6-di(2-ethylhexyloxy)benzene (G2CB) and 1,4-bis[3,6-di(carbazol-9-yl)carbazol-9-yl]-9-(2-ethylhexyl)carbazole (G2CC), were synthesized by a divergent approach involving bromination and Ullmann coupling reactions. Compounds G2CB and G2CC showed high thermal stability (T g = 206 to 245 deg. C) and excellent electrochemical reversibility. Double-layer organic light-emitting diodes were fabricated by using G2CB and G2CC as hole-transporting layers (HTLs) and tris(8-quinolinato)aluminum (Alq 3 ) as light-emissive layer with the device configuration of indium tin oxide/HTL/Alq 3 /LiF:Al. Both devices exhibited bright green emission from Alq 3 . The device using G2CC as HTL has the best performance with a maximum brightness of 8900 cd/m 2 at 14 V and a low turn-on voltage of 3.5 V

Characterization of Organic Thin Film Solar Cells of PCDTBT : PC71BM Prepared by Different Mixing Ratio and Effect of Hole Transport Layer

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Vijay Srinivasan Murugesan

2015-01-01

Full Text Available The organic thin film solar cells (OTFSCs have been successfully fabricated using PCDTBT : PC71BM with different mixing ratios (1 : 1 to 1 : 8 and the influence of hole transport layer thickness (PEDOT : PSS. The active layers with different mixing ratios of PCDTBT : PC71BM have been fabricated using o-dichlorobenzene (o-DCB. The surface morphology of the active layers and PEDOT : PSS layer with different thicknesses were characterized by AFM analysis. Here, we report that the OTFSCs with high performance have been optimized with 1 : 4 ratios of PCDTBT : PC71BM. The power conversion efficiency (PCE = 5.17% of the solar cells was significantly improved by changing thickness of PEDOT : PSS layer. The thickness of the PEDOT : PSS layer was found to be of significant importance; the thickness of the PEDOT : PSS layer at 45 nm (higher spin speed 5000 rpm shows higher short circuit current density (Jsc and lower series resistance (Rs and higher PCE.

Hole-transport limited S-shaped I-V curves in planar heterojunction organic photovoltaic cells

Science.gov (United States)

Zhang, Minlu; Wang, Hui; Tang, C. W.

2011-11-01

Current-voltage (I-V) characteristics of planar heterojunction organic photovoltaic cells based on N',N'-Di-[(1-naphthyl)-N',N'-diphenyl]-1,1'-biphenyl)-4,4'-diamine (NPB) and C60 are investigated. Through variation of the layer thickness and composition, specifically chemical doping NPB with MoOx, we show that the hole-transport limitation in the NPB layer is the determining factor in shaping the I-V characteristics of NPB/C60 cells.

Photo-Crosslinking of Pendent Uracil Units Provides Supramolecular Hole Injection/Transport Conducting Polymers for Highly Efficient Light-Emitting Diodes

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Hsi-Kang Shih

2015-04-01

Full Text Available A new process for modifying a polymeric material for use as a hole injection transport layer in organic light-emitting diodes has been studied, which is through 2π + 2π photodimerization of a DNA-mimetic π-conjugated poly(triphenylamine-carbazole presenting pendent uracil groups (PTC-U under 1 h of UV irradiation. Multilayer florescence OLED (Organic light-emitting diodes device with the PTC-U-1hr as a hole injection/transport layer (ITO (Indium tin oxide/HITL (hole-injection/transport layer (15 nm/N,N'-di(1-naphthyl- N,N'-diphenyl-(1,1'-biphenyl-4,4'-diamine (NPB (15 nm/Tris-(8-hydroxyquinoline aluminum (Alq3 (60 nm/LiF (1 nm/Al (100 nm is fabricated, a remarkable improvement in performance (Qmax (external quantum efficiency = 2.65%, Bmax (maximum brightness = 56,704 cd/m2, and LE (luminance efficiencymax = 8.9 cd/A relative to the control PTC-U (Qmax = 2.40%, Bmax = 40,490 cd/m2, and LEmax = 8.0 cd/A. Multilayer phosphorescence OLED device with the PTC-U-1hr as a hole injection/transport layer (ITO/HITL (15 nm/Ir(ppy3:PVK (40 nm/BCP (10nm/Alq3 (40 nm/LiF (1 nm/Al (100 nm is fabricated by successive spin-coating processes, a remarkable improvement in performance (Qmax = 9.68%, Bmax = 41,466 cd/m2, and LEmax = 36.6 cd/A relative to the control PTC-U (Qmax = 8.35%, Bmax = 34,978 cd/m2, and LEmax = 30.8 cd/A and the commercial product (poly(3,4-ethylenedioxythiophene:polystyrenesulfonate PEDOT:PSS (Qmax = 4.29%, Bmax = 15,678 cd/m2, and LEmax = 16.2 cd/A has been achieved.

Interfacial Passivation of the p-Doped Hole-Transporting Layer Using General Insulating Polymers for High-Performance Inverted Perovskite Solar Cells.

Science.gov (United States)

Zhang, Fan; Song, Jun; Hu, Rui; Xiang, Yuren; He, Junjie; Hao, Yuying; Lian, Jiarong; Zhang, Bin; Zeng, Pengju; Qu, Junle

2018-05-01

Organic-inorganic lead halide perovskite solar cells (PVSCs), as a competing technology with traditional inorganic solar cells, have now realized a high power conversion efficiency (PCE) of 22.1%. In PVSCs, interfacial carrier recombination is one of the dominant energy-loss mechanisms, which also results in the simultaneous loss of potential efficiency. In this work, for planar inverted PVSCs, the carrier recombination is dominated by the dopant concentration in the p-doped hole transport layers (HTLs), since the F4-TCNQ dopant induces more charge traps and electronic transmission channels, thus leading to a decrease in open-circuit voltages (V OC ). This issue is efficiently overcome by inserting a thin insulating polymer layer (poly(methyl methacrylate) or polystyrene) as a passivation layer with an appropriate thickness, which allows for increases in the V OC without significantly sacrificing the fill factor. It is believed that the passivation layer attributes to the passivation of interfacial recombination and the suppression of current leakage at the perovskite/HTL interface. By manipulating this interfacial passivation technique, a high PCE of 20.3% is achieved without hysteresis. Consequently, this versatile interfacial passivation methodology is highly useful for further improving the performance of planar inverted PVSCs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Perovskite solar cells with CuSCN hole extraction layers yield stabilized efficiencies greater than 20%

Science.gov (United States)

Arora, Neha; Dar, M. Ibrahim; Hinderhofer, Alexander; Pellet, Norman; Schreiber, Frank; Zakeeruddin, Shaik Mohammed; Grätzel, Michael

2017-11-01

Perovskite solar cells (PSCs) with efficiencies greater than 20% have been realized only with expensive organic hole-transporting materials. We demonstrate PSCs that achieve stabilized efficiencies exceeding 20% with copper(I) thiocyanate (CuSCN) as the hole extraction layer. A fast solvent removal method enabled the creation of compact, highly conformal CuSCN layers that facilitate rapid carrier extraction and collection. The PSCs showed high thermal stability under long-term heating, although their operational stability was poor. This instability originated from potential-induced degradation of the CuSCN/Au contact. The addition of a conductive reduced graphene oxide spacer layer between CuSCN and gold allowed PSCs to retain >95% of their initial efficiency after aging at a maximum power point for 1000 hours under full solar intensity at 60°C. Under both continuous full-sun illumination and thermal stress, CuSCN-based devices surpassed the stability of spiro-OMeTAD-based PSCs.

Investigation of Poly(3,4-ethylenedioxythiophene:Poly(styrenesulfonate Hole Transport Layer for Solution-Processed Polymer Solar Cells

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Chengxi Zhang

2015-01-01

Full Text Available The inverted polymer solar cell was prepared by self-made spray-coating system, and the poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate (PEDOT:PSS hole transport layer was studied. 220 nm poly-(3-hexylthiophene:[6,6]-phenylC61butyric-acid methyl-ester (P3HT:PCBM and 40 nm PEDOT:PSS were deposited on ZnO thin film subsequently by solution spray coating. Different volume of isopropyl alcohol was introduced into PEDOT:PSS to decrease the contact angle and obtain the optimum Marangoni flow. The surface morphology and roughness of PEDOT:PSS films were characterized by atomic force microscopy with varied deposition temperature from 70°C to 160°C. The improvement of power conversion efficiency (PCE was attributed to the enhancement of vertical phase separation in PEDOT:PSS film, which improved the charge transfer in the bulk cell. The highest PCE of spray-coated PSCs reached 2.80% after postannealing for 10 min.

Effects of Au nanoparticle addition to hole transfer layer in organic solar cells based on copper naphthalocyanine and fullerene

Institute of Scientific and Technical Information of China (English)

Akihiko Nagata; Takeo Okun; Tsuyoshi Akiyaman; Atsushi Suzuki

2014-01-01

Organic solar cells based on copper naphthalocyanine (CuNc) and fullerene (C60) were fabricated, and their photovoltaic properties were investigated. C60 and CuNc were used as n-type and p-type semiconductors, respectively. In addition, the effect of Au nanoparticle addition on a hole transfer layer was investigated, and the power conversion efficiency of the devices was improved after blending the Au nanoparticles into the hole transport layer. Nanostructures of Au nanoparticles were investigated by transmission electron microscopy and X-ray diffraction. Energy levels of molecules were calculated by molecular orbital calculations, and the nanostructure and electronic properties were discussed.

Graphene oxide/PEDOT:PSS composite hole transport layer for efficient and stable planar heterojunction perovskite solar cells.

Science.gov (United States)

Lee, Da-Young; Na, Seok-In; Kim, Seok-Soon

2016-01-21

We investigated a graphene oxide (GO)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) ( PSS) composite as a promising candidate for the practical application of a 2-D carbonaceous hole transport layer (HTL) to planar heterojunction perovskite solar cells (PeSCs) consisting of a transparent electrode/HTL/perovskite/fullerene/metal electrode. Both the insulating properties of GO and the non-uniform coating of the transparent electrode with GO cause the poor morphology of perovskite induced low power conversion efficiency (PCE) of 6.4%. On the other hand, PeSCs with a GO/PEDOT:PSS composite HTL, exhibited a higher PCE of 9.7% than that of a device fabricated with conventional PSS showing a PCE of 8.2%. The higher performance is attributed to the decreased series resistance (RS) and increased shunt resistance (RSh). The well-matched work-function between GO (4.9 eV) and PSS (5.1 eV) probably results in more efficient charge transport and an overall decrease in RS. The existence of GO with a large bandgap of ∼3.6 eV might induce the effective blocking of electrons, leading to an increase of RSh. Moreover, improvement in the long-term stability under atmospheric conditions was observed.

Effect of the post-annealing temperature on the thermal-decomposed NiOx hole contact layer for perovskite solar cells

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Yuxiao Guo

2018-02-01

Full Text Available A hysteresis-less inverted perovskite solar cell (PSC with power conversion efficiency (PCE of 13.57% was successfully achieved based on the thermal-decomposed NiOx hole contact layer, possessing better electron blocking and hole extraction properties for its suitable work function and high-conduction band edge position. Herein, the transparent and high-crystalline NiOx film is prepared by thermal-decomposing of the solution-derived Ni(OH2 film in our study, which is then employed as hole transport layer (HTL of the organic–inorganic hybrid PSCs. Reasonably, the post-annealing treatment, especially for the annealing temperature, could greatly affect the Ni(OH2 decomposition process and the quality of decomposed NiOx nanoparticles. The vital NiOx HTLs with discrepant morphology, crystallinity and transmission certainly lead to a wide range of device performance. As a result, an annealing process of 400∘C/2h significantly promotes the photovoltaic properties of the NiOx layer and the further device performance.

Anisotropic surface hole-transport property of triphenylamine-derivative single crystal prepared by solution method

Energy Technology Data Exchange (ETDEWEB)

Umeda, Minoru, E-mail: mumeda@vos.nagaokaut.ac.jp [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Katagiri, Mitsuhiko; Shironita, Sayoko [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Nagayama, Norio [Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Ricoh Company, Ltd., Nishisawada, Numazu, Shizuoka 410-0007 (Japan)

2016-12-01

Highlights: • A hole transport molecule was investigated based on its electrochemical redox characteristics. • The solubility and supersolubility curves of the molecule were measured in order to prepare a large crystal. • The polarization micrograph and XRD results revealed that a single crystal was obtained. • An anisotropic surface conduction, in which the long-axis direction exceeds that of the amorphous layer, was observed. • The anisotropic surface conduction was well explained by the molecular stacked structure. - Abstract: This paper reports the anisotropic hole transport at the triphenylamine-derivative single crystal surface prepared by a solution method. Triphenylamine derivatives are commonly used in a hole-transport material for organic photoconductors of laser-beam printers, in which the materials are used as an amorphous form. For developing organic photovoltaics using the photoconductor’s technology, preparation of a single crystal seems to be a specific way by realizing the high mobility of an organic semiconductor. In this study, a single crystal of 4-(2,2-diphenylethenyl)-N,N-bis(4-methylphenyl)-benzenamine (TPA) was prepared and its anisotropic hole-transport property measured. First, the hole-transport property of the TPA was investigated based on its chemical structure and electrochemical redox characteristics. Next, a large-scale single crystal formation at a high rate was developed by employing a solution method based on its solubility and supersolubility curves. The grown TPA was found to be a single crystal based on the polarization micrograph observation and crystallographic analysis. For the TPA single crystal, an anisotropic surface conduction was found, which was well explained by its molecular stack structure. The measured current in the long-axis direction is one order of magnitude greater than that of amorphous TPA.

Low resistivity ZnO-GO electron transport layer based CH3NH3PbI3 solar cells

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Muhammad Imran Ahmed

2016-06-01

Full Text Available Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 oC, providing indirect evidence of the performance of solar cells at elevated temperatures.

Low-cost copper complexes as p-dopants in solution processable hole transport layers

Energy Technology Data Exchange (ETDEWEB)

Kellermann, Renate [Department for Materials Science and Engineering, Chair for Materials for Electronics and Energy Technology, Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen 91058 (Germany); Siemens AG – Corporate Technology, Guenther-Scharowsky-Str. 1, Erlangen 91058 (Germany); Taroata, Dan; Maltenberger, Anna; Hartmann, David; Schmid, Guenter [Siemens AG – Corporate Technology, Guenther-Scharowsky-Str. 1, Erlangen 91058 (Germany); Brabec, Christoph J. [Department for Materials Science and Engineering, Chair for Materials for Electronics and Energy Technology, Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen 91058 (Germany)

2015-09-07

We demonstrate the usage of the Lewis-acidic copper(II)hexafluoroacetylacetonate (Cu(hfac){sub 2}) and copper(II)trifluoroacetylacetonate (Cu(tfac){sub 2}) as low-cost p-dopants for conductivity enhancement of solution processable hole transport layers based on small molecules in organic light emitting diodes (OLEDs). The materials were clearly soluble in mixtures of environmentally friendly anisole and xylene and spin-coated under ambient atmosphere. Enhancements of two and four orders of magnitude, reaching 4.0 × 10{sup −11} S/cm with a dopant concentration of only 2 mol% Cu(hfac){sub 2} and 1.5 × 10{sup −9} S/cm with 5 mol% Cu(tfac){sub 2} in 2,2′,7,7′-tetra(N,N-ditolyl)amino-9,9-spiro-bifluorene (spiro-TTB), respectively, were achieved. Red light emitting diodes were fabricated with reduced driving voltages and enhanced current and power efficiencies (8.6 lm/W with Cu(hfac){sub 2} and 5.6 lm/W with Cu(tfac){sub 2}) compared to the OLED with undoped spiro-TTB (3.9 lm/W). The OLED with Cu(hfac){sub 2} doped spiro-TTB showed an over 8 times improved LT{sub 50} lifetime of 70 h at a starting luminance of 5000 cd/m{sup 2}. The LT{sub 50} lifetime of the reference OLED with PEDOT:PSS was only 8 h. Both non-optimized OLEDs were operated at similar driving voltage and power efficiency.

Improving the efficiency and environmental stability of inverted planar perovskite solar cells via silver-doped nickel oxide hole-transporting layer

Science.gov (United States)

Wei, Ying; Yao, Kai; Wang, Xiaofeng; Jiang, Yihua; Liu, Xueyuan; Zhou, Naigen; Li, Fan

2018-01-01

In this paper, we demonstrate the high-performance inverted planar heterojunction perovskite solar cells (PeSCs) based on the novel inorganic hole-transporting layer (HTL) of silver (Ag)-doped NiOx (Ag:NiOx). Density-functional theory (DFT) calculation reveals that Ag prefers to occupy the substitutional Ni site (AgNi) and behaves as an acceptor in NiO lattice. Compared with the pristine NiOx films, appropriate Ag doping can increase the optical transparency, work function, electrical conductivity and hole mobility of NiOx films. Moreover, the CH3NH3PbI3 perovskite films grown on Ag:NiOx exhibit better crystallinity, higher coverage and smoother surface with densely packed larger grains than those grown on the pristine NiOx film. Consequently, the Ag:NiOx HTL boosts the efficiency of the inverted planar heterojunction PeSCs from 13.46% (for the pristine NiOx-based device) to 16.86% (for the 2 at.% Ag:NiOx-based device). Furthermore, the environmental stability of PeSCs based on Ag:NiOx HTL is dramatically improved compared to devices based on organic HTLs and pristine NiOx HTLs. This work provides a simple and effective HTL material system for high-efficient and stable PeSCs.

Potential application of CuSbS2 as the hole transport material in perovskite solar cell: A simulation study

Science.gov (United States)

Teimouri, R.; Mohammadpour, R.

2018-06-01

CH3 NH3 PbI3 (MAPbI3) thin film solar cells, which are reported at laboratory efficiency scale of nearly 22%, are the subject of much attention by energy researchers due to their low cost buildup, acceptable efficiency, high absorption coefficient and diffusion length. The main purpose of this research is to simulate the structure of thin film perovskite solar cells through numerical simulation of SCAPS based on the empirical data for different hole transport layers. After simulating the initial structure of FTO/TiO2/CH3NH3PbI3/Spiro-OMeTAD solar cell, the hole transport layer Spiro-OMeTAD thickness was optimized on a small scale using modeling. The researchers also sought to reduce the amount of this material and the cost of construction. Ultimately, an optimum thickness of 140 nm was obtained for this cell with efficiency of 22.88%. The effect of employing alternative inorganic hole transport layer was investigated as a substitute for Spiro-OMeTAD; Copper antimony sulphide (CuSbS2) was selected due to abundant and available material and high open circuit voltage of about 988 mV. Thickness variations were also performed on a MAPbI3/CuSbS2 solar cell. Finally, It has obtained that perovskite solar cell with 120 nm-thick of CuSbS2 has 23.14% conversion efficiency with acceptable VOC and JSC values.

MoS2: a two-dimensional hole-transporting material for high-efficiency, low-cost perovskite solar cells

Science.gov (United States)

Kohnehpoushi, Saman; Nazari, Pariya; Abdollahi Nejand, Bahram; Eskandari, Mehdi

2018-05-01

In this work MoS2 thin film was studied as a potential two-dimensional (2D) hole-transporting material for fabrication of low-cost, durable and efficient perovskite solar cells. The thickness of MoS2 was studied as a potential factor in reaching high power conversion efficiency in perovskite solar cells. The thickness of the perovskite layer and the different metal back contacts gave distinct photovoltaic properties to the designed cells. The results show that a single sheet of MoS2 could considerably improve the power conversion efficacy of the device from 10.41% for a hole transport material (HTM)-free device to 20.43% for a device prepared with a 0.67 nm thick MoS2 layer as a HTM. On the back, Ag and Al collected the carriers more efficiently than Au due to the value of their metal contact work function with the TiO2 conduction band. The present work proposes a new architecture for the fabrication of low-cost, durable and efficient perovskite solar cells made from a low-cost and robust inorganic HTM and electron transport material.

Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk; Hussain, Zakir; Mujahid, Mohammad; Khan, Ahmed Nawaz [School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, 44000 (Pakistan); Javaid, Syed Saad [College of Aeronautical Engineering, National University of Sciences and Technology, Islamabad, 44000 (Pakistan); Habib, Amir, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk [School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, 44000 (Pakistan); The Department of Physics, College of Sciences, University of Hafar Al Batin, P.O. Box 1803, Hafar Al Batin 31991 Saudi Arabia (Saudi Arabia)

2016-06-15

Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 {sup o}C, providing indirect evidence of the performance of solar cells at elevated temperatures.

Use of interfacial layers to prolong hole lifetimes in hematite probed by ultrafast transient absorption spectroscopy

Science.gov (United States)

Paradzah, Alexander T.; Diale, Mmantsae; Maabong, Kelebogile; Krüger, Tjaart P. J.

2018-04-01

Hematite is a widely investigated material for applications in solar water oxidation due primarily to its small bandgap. However, full realization of the material continues to be hampered by fast electron-hole recombination rates among other weaknesses such as low hole mobility, short hole diffusion length and low conductivity. To address the problem of fast electron-hole recombination, researchers have resorted to growth of nano-structured hematite, doping and use of under-layers. Under-layer materials enhance the photo-current by minimising electron-hole recombination through suppressing of back electron flow from the substrate, such as fluorine-doped tin oxide (FTO), to hematite. We have carried out ultrafast transient absorption spectroscopy on hematite in which Nb2O5 and SnO2 materials were used as interfacial layers to enhance hole lifetimes. The transient absorption data was fit with four different lifetimes ranging from a few hundred femtoseconds to a few nanoseconds. We show that the electron-hole recombination is slower in samples where interfacial layers are used than in pristine hematite. We also develop a model through target analysis to illustrate the effect of under-layers on electron-hole recombination rates in hematite thin films.

Transport Properties of an Electron-Hole Bilayer in Contact with a Superconductor Hybrid Junction

Science.gov (United States)

Bercioux, D.; Klapwijk, T. M.; Bergeret, F. S.

2017-08-01

We investigate the transport properties of a junction consisting of an electron-hole bilayer in contact with normal and superconducting leads. The electron-hole bilayer is considered as a semimetal with two electronic bands. We assume that in the region between the contacts the system hosts an exciton condensate described by a BCS-like model with a gap Γ in the quasiparticle density of states. We first discuss how the subgap electronic transport through the junction is mainly governed by the interplay between two kinds of reflection processes at the interfaces: the standard Andreev reflection at the interface between the superconductor and the exciton condensate, and a coherent crossed reflection at the semimetal-exciton-condensate interface that converts electrons from one layer into the other. We show that the differential conductance of the junction shows a minimum at voltages of the order of Γ /e . Such a minimum can be seen as a direct hallmark of the existence of the gapped excitonic state.

Enhanced bulk conductivity and bipolar transport in mixtures of MoOx and organic hole transport materials

International Nuclear Information System (INIS)

Tian, Baolin; Ban, Dayan; Aziz, Hany

2013-01-01

We study the conductivity of thin films of molybdenum oxide (MoO x ) mixed with an organic hole transport material, such as N,N′-bis(naphthalen-1-yl)-N,N′-bis (phenyl)benzidine or 4′,4″-tri(N-carbazolyl)triphenylamine, in lateral test devices. Contrary to previous reports, the conductivity of the mixture is found to exceed that of neat MoO x , exhibiting ∼ 5 orders of magnitude higher conductivity in comparison to the neat films. Studies also show that the mixing enhances both hole and electron transport. The higher conductivity may be attributed to a higher concentration of “free” carriers in the mixture, as a result of the formation of a charge transfer complex between the MoO x and the hole transport material. The findings shed light on the potential of hybrid composites of inorganic and organic materials in realizing enhanced conductivity. - Highlights: • We investigate the conductivity of mixtures of MoO x and hole transport material (HTM). • Materials are studied in lateral devices instead of conventional vertical devices. • Mixing MoO x with HTM brings > 5 orders of magnitude increase in bulk conductivity. • The mixture of MoO x and HTM enhances both hole and electron transport

Sub-Transport Layer Coding

DEFF Research Database (Denmark)

Hansen, Jonas; Krigslund, Jeppe; Roetter, Daniel Enrique Lucani

2014-01-01

Packet losses in wireless networks dramatically curbs the performance of TCP. This paper introduces a simple coding shim that aids IP-layer traffic in lossy environments while being transparent to transport layer protocols. The proposed coding approach enables erasure correction while being...... oblivious to the congestion control algorithms of the utilised transport layer protocol. Although our coding shim is indifferent towards the transport layer protocol, we focus on the performance of TCP when ran on top of our proposed coding mechanism due to its widespread use. The coding shim provides gains...

Solution-processed inorganic copper(I) thiocyanate (CuSCN) hole transporting layers for efficient p–i–n perovskite solar cells

KAUST Repository

Zhao, Kui; Munir, Rahim; Yan, Buyi; Yang, Yang; Kim, Taesoo; Amassian, Aram

2015-01-01

CuSCN is a highly transparent, highly stable, low cost and easy to solution process HTL that is proposed as a low cost replacement to existing organic and inorganic metal oxide hole transporting materials. Here, we demonstrate hybrid organic

Significantly improved photovoltaic performance in polymer bulk heterojunction solar cells with graphene oxide /PEDOT:PSS double decked hole transport layer

Science.gov (United States)

Rafique, Saqib; Abdullah, Shahino Mah; Shahid, Muhammad Mehmood; Ansari, Mohammad Omaish; Sulaiman, Khaulah

2017-01-01

This work demonstrates the high performance graphene oxide (GO)/PEDOT:PSS doubled decked hole transport layer (HTL) in the PCDTBT:PC71BM based bulk heterojunction organic photovoltaic device. The devices were tested on merits of their power conversion efficiency (PCE), reproducibility, stability and further compared with the devices with individual GO or PEDOT:PSS HTLs. Solar cells employing GO/PEDOT:PSS HTL yielded a PCE of 4.28% as compared to either of individual GO or PEDOT:PSS HTLs where they demonstrated PCEs of 2.77 and 3.57%, respectively. In case of single GO HTL, an inhomogeneous coating of ITO caused the poor performance whereas PEDOT:PSS is known to be hygroscopic and acidic which upon direct contact with ITO reduced the device performance. The improvement in the photovoltaic performance is mainly ascribed to the increased charge carriers mobility, short circuit current, open circuit voltage, fill factor, and decreased series resistance. The well matched work function of GO and PEDOT:PSS is likely to facilitate the charge transportation and an overall reduction in the series resistance. Moreover, GO could effectively block the electrons due to its large band-gap of ~3.6 eV, leading to an increased shunt resistance. In addition, we also observed the improvement in the reproducibility and stability.

Significantly improved photovoltaic performance in polymer bulk heterojunction solar cells with graphene oxide /PEDOT:PSS double decked hole transport layer.

Science.gov (United States)

Rafique, Saqib; Abdullah, Shahino Mah; Shahid, Muhammad Mehmood; Ansari, Mohammad Omaish; Sulaiman, Khaulah

2017-01-13

This work demonstrates the high performance graphene oxide (GO)/PEDOT:PSS doubled decked hole transport layer (HTL) in the PCDTBT:PC 71 BM based bulk heterojunction organic photovoltaic device. The devices were tested on merits of their power conversion efficiency (PCE), reproducibility, stability and further compared with the devices with individual GO or PEDOT:PSS HTLs. Solar cells employing GO/PEDOT:PSS HTL yielded a PCE of 4.28% as compared to either of individual GO or PEDOT:PSS HTLs where they demonstrated PCEs of 2.77 and 3.57%, respectively. In case of single GO HTL, an inhomogeneous coating of ITO caused the poor performance whereas PEDOT:PSS is known to be hygroscopic and acidic which upon direct contact with ITO reduced the device performance. The improvement in the photovoltaic performance is mainly ascribed to the increased charge carriers mobility, short circuit current, open circuit voltage, fill factor, and decreased series resistance. The well matched work function of GO and PEDOT:PSS is likely to facilitate the charge transportation and an overall reduction in the series resistance. Moreover, GO could effectively block the electrons due to its large band-gap of ~3.6 eV, leading to an increased shunt resistance. In addition, we also observed the improvement in the reproducibility and stability.

Ordered conducting polymer multilayer films and its application for hole injection layers in organic light-emitting devices

International Nuclear Information System (INIS)

Xu Jianhua; Yang Yajie; Yu Junsheng; Jiang Yadong

2009-01-01

We reported a controlled architecture growth of layer-ordered multilayer film of poly(3,4-ethylene dioxythiophene) (PEDOT) via a modified Langmuir-Blodgett (LB) method. An in situ polymerization of 3,4-ethylene dioxythiophene (EDOT) monomer in multilayer LB film occurred for the formation of ordered conducting polymer embedded multilayer film. The well-distribution of conducting polymer particles was characterized by secondary-ion mass spectrometry (SIMS). The conducting film consisting of ordered PEDOT ultrathin layers was investigated as a hole injection layer for organic light-emitting diodes (OLEDs). The results showed that, compared to conventional spin-coating PEDOT film and electrostatic self-assembly (ESA) film, the improved performance of OLEDs was obtained after using ordered PEDOT LB film as hole injection layer. It also indicated that well-ordered structure of hole injection layer was attributed to the improvement of OLED performance, leading to the increase of charged carrier mobility in hole injection layer and the recombination rate of electrons and holes in the electroluminescent layer.

Improved electron transport layer

DEFF Research Database (Denmark)

2012-01-01

The present invention provides: a method of preparing a coating ink for forming a zinc oxide electron transport layer, comprising mixing zinc acetate and a wetting agent in water or methanol; a coating ink comprising zinc acetate and a wetting agent in aqueous solution or methanolic solution......; a method of preparing a zinc oxide electron transporting layer, which method comprises: i) coating a substrate with the coating ink of the present invention to form a film; ii) drying the film; and iii) heating the dry film to convert the zinc acetate substantially to ZnO; a method of preparing an organic...... photovoltaic device or an organic LED having a zinc oxide electron transport layer, the method comprising, in this order: a) providing a substrate bearing a first electrode layer; b) forming an electron transport layer according to the following method: i) coating a coating ink comprising an ink according...

Improved fill factor in inverted planar perovskite solar cells with zirconium acetate as the hole-and-ion-blocking layer.

Science.gov (United States)

Zhang, Xuewen; Liang, Chunjun; Sun, Mengjie; Zhang, Huimin; Ji, Chao; Guo, Zebang; Xu, Yajun; Sun, Fulin; Song, Qi; He, Zhiqun

2018-03-14

Planar perovskite solar cells (PSCs) have gained great interest due to their low-temperature solution preparation and simple process. In inverted planar PSCs, an additional buffer layer is usually needed on the top of the PCBM electron-transport layer (ETL) to enhance the device performance. In this work, we used a new buffer layer, zirconium acetate (Zr(Ac) 4 ). The inclusion of the Zr(Ac) 4 buffer layer leads to the increase of FF from ∼68% to ∼79% and PCE from ∼14% to ∼17% in the planar PSCs. The UPS measurement indicates that the Zr(Ac) 4 layer has a low HOMO level of -8.2 eV, indicating that the buffer layer can act as a hole-blocking layer. Surface morphology and surface chemistry investigations reveal that the elements I, MA and Pb can diffuse across the PCBM ETL, damaging the device performance. The covering Zr(Ac) 4 molecules fill in the pinholes of the PCBM layer and effectively block the ions/molecules of the perovskite from diffusion across the ETL. The resulting more robust PCBM/Zr(Ac) 4 ETL leads to weaker ionic charge accumulation and lower diode leakage current. The double role of hole-and-ion blocking of the Zr(Ac) 4 layer explains the improved FF and PCE in the PSCs.

Material Exchange Property of Organo Lead Halide Perovskite with Hole-Transporting Materials

Directory of Open Access Journals (Sweden)

Seigo Ito

2015-10-01

Full Text Available Using X-ray diffraction (XRD, it was confirmed that the deposition of hole-transporting materials (HTM on a CH3NH3PbI3 perovskite layer changed the CH3NH3PbI3 perovskite crystal, which was due to the material exchanging phenomena between the CH3NH3PbI3 perovskite and HTM layers. The solvent for HTM also changed the perovskite crystal. In order to suppress the crystal change, doping by chloride ion, bromide ion and 5-aminovaleric acid was attempted. However, the doping was unable to stabilize the perovskite crystal against HTM deposition. It can be concluded that the CH3NH3PbI3 perovskite crystal is too soft and flexible to stabilize against HTM deposition.

Charge transport in quantum dot organic solar cells with Si quantum dots sandwiched between poly(3-hexylthiophene) (P3HT) absorber and bathocuproine (BCP) transport layers

Science.gov (United States)

Verma, Upendra Kumar; Kumar, Brijesh

2017-10-01

We have modeled a multilayer quantum dot organic solar cell that explores the current-voltage characteristic of the solar cell whose characteristics can be tuned by varying the fabrication parameters of the quantum dots (QDs). The modeled device consists of a hole transport layer (HTL) which doubles up as photon absorbing layer, several quantum dot layers, and an electron transport layer (ETL). The conduction of charge carriers in HTL and ETL has been modeled by the drift-diffusion transport mechanism. The conduction and recombination in the quantum dot layers are described by a system of coupled rate equations incorporating tunneling and bimolecular recombination. Analysis of QD-solar cells shows improved device performance compared to the similar bilayer and trilayer device structures without QDs. Keeping other design parameters constant, solar cell characteristics can be controlled by the quantum dot layers. Bimolecular recombination coefficient of quantum dots is a prime factor which controls the open circuit voltage (VOC) without any significant reduction in short circuit current (JSC).

TiO2 nanofiber solid-state dye sensitized solar cells with thin TiO2 hole blocking layer prepared by atomic layer deposition

International Nuclear Information System (INIS)

Li, Jinwei; Chen, Xi; Xu, Weihe; Nam, Chang-Yong; Shi, Yong

2013-01-01

We incorporated a thin but structurally dense TiO 2 layer prepared by atomic layer deposition (ALD) as an efficient hole blocking layer in the TiO 2 nanofiber based solid-state dye sensitized solar cell (ss-DSSC). The nanofiber ss-DSSCs having ALD TiO 2 layers displayed increased open circuit voltage, short circuit current density, and power conversion efficiency compared to control devices with blocking layers prepared by spin-coating liquid TiO 2 precursor. We attribute the improved photovoltaic device performance to the structural integrity of ALD-coated TiO 2 layer and consequently enhanced hole blocking effect that results in reduced dark leakage current and increased charge carrier lifetime. - Highlights: • TiO 2 blocking locking layer prepared by atomic layer deposition (ALD) method. • ALD-coated TiO 2 layer enhanced hole blocking effect. • ALD blocking layer improved the voltage, current and efficiency. • ALD blocking layer reduced dark leakage current and increased electron lifetime

Comparisons of retinal nerve fiber layer thickness changes after macular hole surgery

Directory of Open Access Journals (Sweden)

Nelson Chamma Capelanes

Full Text Available ABSTRACT Purpose: To compare postoperative changes in retinal nerve fiber layer thickness in patients with macular holes treated with vitrectomy with Brilliant Blue-assisted internal limiting membrane peeling. Methods: Twenty-two eyes of 20 patients with macular holes were studied. Each eye was selected to undergo Brilliant Blue-assisted internal limiting membrane peeling. The circumferential retinal nerve fiber layer thickness was determined using spectral domain optical coherence tomography preoperatively and 2 months postoperatively. Mean overall and sectoral retinal nerve fiber layer thicknesses were obtained for each patient. Results: There was no statistically significant difference (p≥0.05 between the pre- and post-treatment measurements in relation to each CFN variable, i.e., on average, pre-treatment measures were the same as post-treatment measures. Furthermore, despite the differences between the pre- and post-treatment measures always being positive (pre-post >0, they are not statistically significant. Conclusions: This study showed no significant decrease in retinal nerve fiber layer thickness measurements after macular holes surgery, regardless of age or sex.

Room-Temperature and Solution-Processable Cu-Doped Nickel Oxide Nanoparticles for Efficient Hole-Transport Layers of Flexible Large-Area Perovskite Solar Cells.

Science.gov (United States)

He, Qiqi; Yao, Kai; Wang, Xiaofeng; Xia, Xuefeng; Leng, Shifeng; Li, Fan

2017-12-06

Flexible perovskite solar cells (PSCs) using plastic substrates have become one of the most attractive points in the field of thin-film solar cells. Low-temperature and solution-processable nanoparticles (NPs) enable the fabrication of semiconductor thin films in a simple and low-cost approach to function as charge-selective layers in flexible PSCs. Here, we synthesized phase-pure p-type Cu-doped NiO x NPs with good electrical properties, which can be processed to smooth, pinhole-free, and efficient hole transport layers (HTLs) with large-area uniformity over a wide range of film thickness using a room-temperature solution-processing technique. Such a high-quality inorganic HTL allows for the fabrication of flexible PSCs with an active area >1 cm 2 , which have a power conversion efficiency over 15.01% without hysteresis. Moreover, the Cu/NiO x NP-based flexible devices also demonstrate excellent air stability and mechanical stability compared to their counterpart fabricated on the pristine NiO x films. This work will contribute to the evolution of upscaling flexible PSCs with a simple fabrication process and high device performances.

Effects of bedrock fractures on radionuclide transport near a vertical deposition hole for spent nuclear fuel

International Nuclear Information System (INIS)

Pulkkanen, V.-M.; Nordman, H.

2011-12-01

Effects of bedrock fractures on radionuclide transport near a vertical deposition hole for spent nuclear fuel are studied computationally. The studied fractures are both natural and excavation damage fractures. The emphasis is on the detailed modelling of geometry in 3D in contrast to the traditional radionuclide transport studies that often concentrate on chain decays, sorption, and precipitation at the expense of the geometry. The built computer model is used to assess the significance of components near a deposition hole for radionuclide transport and to estimate the quality of previously used modelling techniques. The results show nearly exponential decrease of radionuclide mass in the bentonite buffer when the release route is a thin natural fracture. The results also imply that size is the most important property of the tunnel section for radionuclide transport. In addition, the results demonstrate that the boundary layer theory can be used to approximate the release of radionuclides with certain accuracy and that a thin fracture in rock can be modelled, at least to a certain limit, by using a fracture with wider aperture but with same flow rate as the thin fracture. (orig.)

Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

International Nuclear Information System (INIS)

Huang, H.-H.; Chu, S.-Y.; Kao, P.-C.; Chen, Y.-C.; Yang, M.-R.; Tseng, Z.-L.

2009-01-01

The advantages of using an anode buffer layer of ZnO on the electro-optical properties of organic light emitting devices (OLEDs) are reported. ZnO powders were thermal-evaporated and then treated with ultra-violet (UV) ozone exposure to make the ZnO layers. The turn-on voltage of OLEDs decreased from 4 V (4.2 cd/m 2 ) to 3 V (3.4 cd/m 2 ) and the power efficiency increased from 2.7 lm/W to 4.7 lm/W when a 1-nm-thick ZnO layer was inserted between indium tin oxide (ITO) anodes and α-naphthylphenylbiphenyl diamine (NPB) hole-transporting layers. X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS) results revealed the formation of the ZnO layer and showed that the work function increased by 0.59 eV when the ZnO/ITO layer was treated by UV-ozone for 20 min. The surface of the ZnO/ITO film became smoother than that of bare ITO film after the UV-ozone treatment. Thus, the hole-injection energy barrier was lowered by inserting an ZnO buffer layer, resulting in a decrease of the turn-on voltage and an increase of the power efficiency of OLEDs.

Improvement of carrier transport and luminous efficiency of organic light emitting diodes by introducing a co-deposited active layer

Energy Technology Data Exchange (ETDEWEB)

Ohtani, Naoki; Murata, Masaya; Kashiwabara, Keiichiro; Kurata, Kazunori, E-mail: ohtani@mail.doshisha.ac.j [Department of Electronics, Doshisha University, 3-1 Tatara-Miyakodani, Kyotanabe-shi, Kyoto 610-0321 (Japan)

2009-11-15

We evaluated carrier transport and luminous efficiency of organic light-emitting diodes (OLEDs) whose active regions consist of a single co-deposited layer. One organic material is a hole transport material N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), while the other is an electron transport/emissive material Tris(8-hydroxyquinolinato)-aluminum (Alq3). It was found that the luminous efficiency strongly depends on the thickness and the ratio of the TPD:Alq3 co-deposited layer. This indicates that the carrier balance in the active region can be improved by changing the co-deposited layers. In addition, we performed the dye-doping method to clarify the recombination region. As a result, we found that the radiative recombination is caused in the whole TPD:Alq3 co-deposited layer.

Electron-hole collision limited transport in charge-neutral bilayer graphene

Science.gov (United States)

Nam, Youngwoo; Ki, Dong-Keun; Soler-Delgado, David; Morpurgo, Alberto F.

2017-12-01

Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impurities, but by electron-hole collisions. The phenomenon manifests itself in a negative four-terminal resistance that becomes visible when the density of holes (electrons) is suppressed by gate-shifting the Fermi level in the conduction (valence) band, above the thermal energy. For smaller densities, transport is diffusive, and the measured conductivity is reproduced quantitatively, with no fitting parameters, by including electron-hole scattering as the only process causing velocity relaxation. Experiments on a trilayer device show that the phenomenon is robust and that transport at charge neutrality is governed by the same physics. Our results provide a textbook illustration of a transport regime that had not been observed previously and clarify the nature of conduction through charge-neutral graphene under conditions in which carrier density inhomogeneity is immaterial. They also demonstrate that transport can be limited by a fully electronic mechanism, originating from the same microscopic processes that govern the physics of Dirac-like plasmas.

Assessing the potential of group 13 and 14 metal/metalloid phthalocyanines as hole transport layers in organic light emitting diodes

Science.gov (United States)

Plint, Trevor; Lessard, Benoît H.; Bender, Timothy P.

2016-04-01

In this study, we have assessed the potential application of group 13 and 14 metal and metalloid phthalocyanines ((X)n-MPcs) and their axially substituted derivatives as hole-transporting layers in organic light emitting diodes (OLEDs). OLEDs studied herein have the generic structure of glass/ITO/(N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB) or (X)n-MPc)(50 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (80 nm), where X is an axial substituent group. OLEDs using chloro aluminum phthalocyanine (Cl-AlPc) showed good peak luminance values of 2620 ± 113 cd/m2 at 11 V. To our knowledge, Cl-AlPc has not previously been shown to work as a hole transport material (HTL) in OLEDs. Conversely, the di-chlorides of silicon, germanium, and tin phthalocyanine (Cl2-SiPc, Cl2-GePc, and Cl2-SnPc, respectively) showed poor performance compared to Cl-AlPc, having peak luminances of only 38 ± 4 cd/m2 (12 V), 23 ± 1 cd/m2 (8.5 V), and 59 ± 5 cd/m2 (13.5 V), respectively. However, by performing a simple axial substitution of the chloride groups of Cl2-SiPc with pentafluorophenoxy groups, the resulting bis(pentafluorophenoxy) silicon phthalocyanine (F10-SiPc) containing OLED had a peak luminance of 5141 ± 941 cd/m2 (10 V), a two order of magnitude increase over its chlorinated precursor. This material showed OLED characteristics approaching those of a baseline OLED based on the well-studied triarylamine NPB. Attempts to attach the pentafluorophenoxy axial group to both SnPc and GePc were hindered by synthetic difficulties and low thermal stability, respectively. In light of the performance improvements observed by simple axial substitution of SiPc in OLEDs, the use of axially substituted MPcs in organic electronic devices remains of continuing interest to us and potentially the field in general.

Role of the polymeric hole injection layer on the efficiency and stability of organic light emitting diodes with small molecular emitters

International Nuclear Information System (INIS)

Chin, Byung Doo

2008-01-01

In this paper, an improvement in the properties of the small molecular organic light emitting diode (OLED) upon application of a polymeric hole injection layer (HIL) was reported. The luminous efficiency, operating voltage and lifetime of devices with dye-doped small molecule emitters (fluorescent and phosphorescent) were found to be sensitive to the HIL/hole transport layer (HTL) combination used, where the improved injection and brightness was shown at the hole cascading structure and the longer lifetime behaviour was obtained at the hole-trapping structure. Use of a polymeric HIL significantly increased the luminous current efficiency and lifetime for both fluorescent blue and phosphorescent green/red light emitters. The polymeric HIL was effective in terms of the driving characteristics of phosphorescent OLED, since it provides higher brightness behaviour at lower current density. The apparent shade of the pixel image at light emission, which will probably induce degradation at the pixel wall interface, will be suppressed by the use of polymeric HIL. In spite of the ambiguity in the formation of such shaded pixels and their influence at the decay of OLED, intrinsic stability of polymeric HIL/anode would be advantageous for stable storage and operation of devices.

Influence of co-deposited active layers on carrier transport and luminescent properties in organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Murata, Masaya; Yamamoto, Takayuki; Haishi, Motoki; Ohtani, Naoki [Department of Electronics, Doshisha University, Tatara-Miyakodani, Kyotanabe-shi, Kyoto (Japan); Ando, Taro [Central Research Laboratory, Hamamatsu Photonics, Hirakuchi, Hamakita-ku, Hamamatsu-shi, Shizuoka (Japan)

2009-01-15

We have investigated the influence of a co-deposited active layer in organic light-emitting diodes (OLEDs) on carrier transport and optical properties to improve radiative characteristics of OLEDs. The co-deposited layer consists of two organic materials; one is a hole transport material (TPD) and the other is an electron transport/emissive material (Alq3). We evaluated current-voltage characteristics and electroluminescence (EL) properties of various samples in which the thicknesses and compound ratios of the co-deposited layers are different. The results indicate that the devices consisting of TPD:Alq3 co-deposited layer sandwiched between TPD and Alq3 layers exhibit lower starting voltages for the light emission than the sample of simple TPD/Alq3 heterojunction structure. In addition, the starting voltage is independent of the thickness of TPD:Alq3 co-deposited layer. These samples have two interfaces at both surfaces of TPD:Alq3 co-deposited layer. Thus, we estimated the radiative recombination occurs at the interfaces. Nevertheless, we found that the radiative recombination occurs only at the interface of TPD:Alq3 co-deposited layer and Alq3 layer. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Formation of electrostatic double-layers and electron-holes in a low pressure mercury plasma column

International Nuclear Information System (INIS)

Petraconi, G; Maciel, Homero S

2003-01-01

Experimental studies of the formation of electrostatic double layers (DLs) and electron-holes (e-holes) are reported. The measurements were performed in the positive column of a mercury arc discharge operating in the low-pressure range of (2.0-14.0) x 10 -2 Pa with current density in the range of (3.0-8.0) x 10 3 A m -2 . Stable and unstable modes of the discharge were identified as the current was gradually increased, keeping constant the vapour pressure. The discharge remains stable until a critical current from which a slight increase of the current leads to an unstable regime characterized by high discharge impedance and strong oscillations. This mode ceased after a DL was formed in the plasma column. To induce the DL formation and to transport it smoothly along the discharge column, a low intensity B-field (7-10) x 10 -3 T produced by a movable single coil was used. The B-field locally increases the electron current density and makes the DL form at the centre of the magnetic constriction where it remained at rest. Electrostatic potential structures compatible with ordinary DLs and multiple-layers could be formed in the plasma column by dealing with the combined effects of the operational parameters of the discharge. It is noticeable that a pure e-hole, which is a symmetric triple-layer having a bell shape potential profile, could easily be formed by means of this experimental technique. A partial kinetic description, based on the space charge structure derived from an experimental e-hole, is presented in order to infer the charged particle populations that could contribute to the space charge of the e-hole. Evidence is shown that strong e-hole formation might be driven by an ion beam, therefore it could not be formed in isolation since its formation requires a nearby ion accelerating potential structure. Probe measurements of the plasma properties, at various radial positions of the stable positive column, are also presented. In the stable mode, prior to

Enhanced efficiency and air-stability of NiOX-based perovskite solar cells via PCBM electron transport layer modification with Triton X-100.

Science.gov (United States)

Lee, Kisu; Ryu, Jaehoon; Yu, Haejun; Yun, Juyoung; Lee, Jungsup; Jang, Jyongsik

2017-11-02

We modified phenyl-C61-butyric acid methyl ester (PCBM) for use as a stable, efficient electron transport layer (ETL) in inverted perovskite solar cells (PSCs). PCBM containing a surfactant Triton X-100 acts as the ETL and NiO X nanocrystals act as a hole transport layer (HTL). Atomic force microscopy and scanning electron microscopy images showed that surfactant-modified PCBM (s-PCBM) forms a high-quality, uniform, and dense ETL on the rough perovskite layer. This layer effectively blocks holes and reduces interfacial recombination. Steady-state photoluminescence and electrochemical impedance spectroscopy analyses confirmed that Triton X-100 improved the electron extraction performance of PCBM. When the s-PCBM ETL was used, the average power conversion efficiency increased from 10.76% to 15.68%. This improvement was primarily caused by the increases in the open-circuit voltage and fill factor. s-PCBM-based PSCs also showed good air-stability, retaining 83.8% of their initial performance after 800 h under ambient conditions.

High Mobility, Hole Transport Materials for Highly Efficient PEDOT:PSS Replacement in Inverted Perovskite Solar Cells

KAUST Repository

Neophytou, Marios

2017-04-24

Perovskite solar cells are one of the most promising photovoltaic technologies, due to their rapid increase in power conversion efficiency (3.8% to 21.1%) in a very short period of time and the relative ease of their fabrication compared to traditional inorganic solar cells. One of the drawbacks of perovskite solar cells is their limited stability in non-inert atmospheres. In the inverted device configuration this lack of stability can be attributed to the inclusion of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate(PEDOT:PSS) as the hole transporting layer. Herein we report the synthesis of two new triarylamine based hole transporting materials, synthesised from readily available starting materials. These new materials show increased power conversion efficiencies, of 13.0% and 12.1%, compared to PEDOT:PSS (10.9%) and exhibit increased stability achieving lifetimes in excess of 500 hours. Both molecules are solution processible at low temperatures and offer potential for low cost, scalable production on flexible substrates for large scale perovskite solar cells.

High Mobility, Hole Transport Materials for Highly Efficient PEDOT:PSS Replacement in Inverted Perovskite Solar Cells

KAUST Repository

Neophytou, Marios; Griffiths, Jack; Fraser, James; Kirkus, Mindaugas; Chen, Hu; Nielsen, Christian; McCulloch, Iain

2017-01-01

Perovskite solar cells are one of the most promising photovoltaic technologies, due to their rapid increase in power conversion efficiency (3.8% to 21.1%) in a very short period of time and the relative ease of their fabrication compared to traditional inorganic solar cells. One of the drawbacks of perovskite solar cells is their limited stability in non-inert atmospheres. In the inverted device configuration this lack of stability can be attributed to the inclusion of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate(PEDOT:PSS) as the hole transporting layer. Herein we report the synthesis of two new triarylamine based hole transporting materials, synthesised from readily available starting materials. These new materials show increased power conversion efficiencies, of 13.0% and 12.1%, compared to PEDOT:PSS (10.9%) and exhibit increased stability achieving lifetimes in excess of 500 hours. Both molecules are solution processible at low temperatures and offer potential for low cost, scalable production on flexible substrates for large scale perovskite solar cells.

Performance enhancement of perovskite solar cells with Mg-doped TiO2 compact film as the hole-blocking layer

International Nuclear Information System (INIS)

Wang, Jing; Qin, Minchao; Tao, Hong; Ke, Weijun; Chen, Zhao; Wan, Jiawei; Qin, Pingli; Lei, Hongwei; Fang, Guojia; Xiong, Liangbin; Yu, Huaqing

2015-01-01

In this letter, we report perovskite solar cells with thin dense Mg-doped TiO 2 as hole-blocking layers (HBLs), which outperform cells using TiO 2 HBLs in several ways: higher open-circuit voltage (V oc ) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO 2 as compared to TiO 2 such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and the formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V oc . In addition, the Mg-modulated TiO 2 with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device

Study on characteristics of a double-conductible channel organic thin-film transistor with an ultra-thin hole-blocking layer

International Nuclear Information System (INIS)

Guang-Cai, Yuan; Zheng, Xu; Su-Ling, Zhao; Fu-Jun, Zhang; Xue-Yan, Tian; Xu-Rong, Xu; Na, Xu

2009-01-01

The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers are limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at V DS = −20 V showed excellent hole mobility μFE and threshold voltage V TH of 0.58 cm 2 /(V·s) and −4.6 V, respectively

Giant electron-hole transport asymmetry in ultra-short quantum transistors

Science.gov (United States)

McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

2017-01-01

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. PMID:28561024

Trap effect of an ultrathin DCJTB layer in organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Wang Yuanmin [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China); Teng Feng [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China)]. E-mail: advanced9898@126.com; Xu Zheng [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China); Hou Yanbing [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China); Yang Shengyi [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China); Xu Xurong [Institute of Optoelectronic Technology, Key Laboratory for Information Storage, Displays and Materials, Beijing Jiaotong University, Beijing 100044 (China)

2005-08-15

An improved performance of organic light-emitting diodes has been obtained by using 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4Hpyran (DCJTB) as an ultrathin emitting layer. When 0.1 nm DCJTB was inserted between the hole-transporting layer and electron-transporting layer, for an unoptimized device indium-tin oxide (ITO)/naphtylphenyliphenyl diamine (NPB)/DCJTB (0.1 nm)/8-hydroxyquinoline aluminum (Alq{sub 3})/Al, the maximum brightness was 1531 cd m{sup -2} at 15 V. Compared with doped devices ITO/NPB/Alq{sub 3}:DCJTB (1%)/Alq{sub 3}/LiF/Al, a higher efficiency has been achieved. Compared with the conventional device ITO/NPB/Alq{sub 3}/Al, the inserted device has a slightly higher current efficiency and lower turn-on voltage. We suggest the ultrathin DCJTB layer acts as trap for carriers, and the accumulated holes at the hole-transport layer/electron-transport layer interface have enhanced the electric field in the electron-transport layer and improved the electron injection at the cathode.

Addressing the efficiency roll-off in a fluorescent OLED by facile electron transport layer doping and carrier confinement

Science.gov (United States)

Soman, Anjaly; M, Manuraj; Unni, K. N. Narayanan

2018-05-01

Organic light emitting diodes (OLEDs) often face the issue of decreasing power efficiency with increasing brightness. Loss of charge carrier balance is one of the factors contributing to the efficiency roll-off. We demonstrate that by using a combination of doped electron transport layer (ETL) and a specially chosen electron blocking layer (EBL) having high hole mobility, this efficiency roll-off can be effectively suppressed. A tris-(8-hydroxyquinoline) aluminium (Alq3) based OLED has been fabricated with 2,3,6,7-Tetrahydro-1,1,7,7,-tetramethyl-1H, 5H,11H-10-(2-benzothiazolyl) quinolizino-[9,9a, 1n gh]coumarin (C545T) as the emissive dopant. Bulk doping of the ETL with lithium fluoride (LiF) was optimized to increase the luminous intensity as well as the current efficiency. An EBL with high hole mobility introduced between the EML and the hole transport layer (HTL) improved the performance drastically, and the device brightness at 9 V got improved by a factor of 2.5 compared to that of the control device. While increasing the brightness from 100 cd/m2 to 1000 cd/m2, the power efficiency drop was 47% for the control device whereas only a drop of 15% was observed for the modified device. The possible mechanisms for the enhanced performance are discussed.

Tomographic Structural Changes of Retinal Layers after Internal Limiting Membrane Peeling for Macular Hole Surgery.

Science.gov (United States)

Faria, Mun Yueh; Ferreira, Nuno P; Cristóvao, Diana M; Mano, Sofia; Sousa, David Cordeiro; Monteiro-Grillo, Manuel

2018-01-01

To highlight tomographic structural changes of retinal layers after internal limiting membrane (ILM) peeling in macular hole surgery. Nonrandomized prospective, interventional study in 38 eyes (34 patients) subjected to pars plana vitrectomy and ILM peeling for idiopathic macular hole. Retinal layers were assessed in nasal and temporal regions before and 6 months after surgery using spectral domain optical coherence tomography. Total retinal thickness increased in the nasal region and decreased in the temporal region. The retinal nerve fiber layer (RNFL), ganglion cell layer (GCL), and inner plexiform layer (IPL) showed thinning on both nasal and temporal sides of the fovea. The thickness of the outer plexiform layer (OPL) increased. The outer nuclear layer (ONL) and outer retinal layers (ORL) increased in thickness after surgery in both nasal and temporal regions. ILM peeling is associated with important alterations in the inner retinal layer architecture, with thinning of the RNFL-GCL-IPL complex and thickening of OPL, ONL, and ORL. These structural alterations can help explain functional outcome and could give indications regarding the extent of ILM peeling, even though peeling seems important for higher rate of hole closure. © 2017 S. Karger AG, Basel.

Electrically conductive polyaniline as hole-injection layer for MEH-PPV:BT based polymer light emitting diodes

International Nuclear Information System (INIS)

Mohsennia, M.; Bidgoli, M. Massah; Boroumand, F. Akbari; Nia, A. Mohsen

2015-01-01

Graphical abstract: The PANI prepared at 15 °C with higher electrical conductivity has been used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of ITO/PANI/MEHPPV:BT/Al. - Highlights: • Polyaniline (PANI) was synthesized at different temperatures (5, 10, 15, 20 and 25 °C). • The PANI sample with higher electrical conductivity was used as HIL in the PLED devices. • The PANI injection layer yielded higher current and lower turn-on voltage. • The effect of MEH-PPV:BT weight ratio on the PLED performance has been also investigated. • The J–V characteristics of the devices have been explained by FN tunneling model. - Abstract: Polyaniline (PANI) was synthesized by oxidative polymerization of aniline at different temperatures (5, 10, 15, 20 and 25 °C). The influence of polymerization temperature on sheet resistance of PANI was investigated, and the one prepared at 15 °C which showed lowest resistivity was chosen for further analysis. PANI was subsequently used as hole-injection layer (HIL) in polymer light emitting diodes (PLEDs) with structure of poly(ethylene terephthalate) (PET)/indium tin oxide (ITO)/PANI/MEH-PPV:BT/aluminum (Al). The PLEDs with emission layer made from a blend of poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and an electron transporting material, benzothiadiazole (BT), were fabricated at room conditions without using glove boxes. Our results showed an improvement in performance of our PANI-based fabricated PLEDs (PET/ITO/PANI/MEH-PPV:BT/Al) compared to the conventional devices that use poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PET/ITO/PEDOT:PSS/MEH-PPV:BT/Al) as their HIL. The hole injection barrier height (φ) of the fabricated PLEDs were then estimated using the Fowler–Nordheim (FN) field-emission tunneling theory and revealed that the barrier height decreases by increasing the BT concentration in the MEH-PPV:BT blend layer

DC-sputtered MoO{sub x} thin-films as hole transport layer in organic photovoltaic

Energy Technology Data Exchange (ETDEWEB)

Cauduro, Andre L.F.; Ahmadpour, Mehrad; Rubahn, Horst-Guenter; Madsen, Morten, E-mail: cauduro@mci.sdu.dk [NanoSYD, University of Southern Denmark (Denmark); Reis, Roberto dos; Chen, Gong; Schmid, Andreas [National Center for Electron Microscopy, The Molecular Foundry, LBNL, Berkeley, CA (United States); Methivier, Christophe [Sorbonne Universites, UPMC Univ Paris 06, CNRS UMR, Laboratoire de Reactivite de Surface (LRS) (France); Witkowski, Nadine [Sorbonne Universites, UPMC Univ Paris 06, UMR CNRS, Institut des Nanosciences de Paris (INSP) (France); Fichtner, Paulo F.P. [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre (Brazil)

2016-07-01

Full text: Molybdenum-oxide (MoO{sub x}) thin-films have attracted a lot of attention in the past years due to their unique ability to act as interfacial layers in novel electronics and energy applications. In the work presented here, large tuning possibilities in the electronic and optoelectronic properties of MoO{sub x} thin-films deposited by reactive sputtering using different oxygen partial pressures and annealing conditions are demonstrated along with the implementation of the films in organic photovoltaic. MoO{sub x} thin-films deposited under low oxygen partial pressure present a high conductivity of around 3.22 S.cm{sup -1}, however, as the oxygen partial pressure increases, the conductivity of the resulting films drops by up to around 10 orders of magnitude as the [O]/[Mo] ratio changes from 2.57 to beyond 3.00. Optical absorption measurements also show drastic changes mostly within the 0.60 eV - 2.50 eV spectral region for the same increase in oxygen concentration in [1]. UPS and XPS studies are conducted for accessing information about the work function and surface composition of the thin-films. The XPS spectra registered on the Mo 3d core level reveal how the oxidation state of Mo is affected by the partial pressure of oxygen during film growth. The work function of the films increase with annealing temperature and oxygen content, and span a tuning range of about 2 eV. To extract the spatially resolved work function values from the sputtered films, we use in addition Low Energy Electron Microscopy (LEEM). Finally, the application of the MoO{sub x} thin-films in organic optoelectronic devices is investigated by employing them as hole transport layers in small molecule photovoltaic, here based on DBP and C70. The work thus demonstrates a viable method for tuning the electronic and optoelectronic properties of MoO{sub x} thin-films, which can be applied in combination with a wide range of materials in e.g. organic photovoltaic. [1] A.L. Fernandes Cauduro

Spirobifluorene Core-Based Novel Hole Transporting Materials for Red Phosphorescence OLEDs

Directory of Open Access Journals (Sweden)

Ramanaskanda Braveenth

2017-03-01

Full Text Available Two new hole transporting materials, named HTM 1A and HTM 1B, were designed and synthesized in significant yields using the well-known Buchwald Hartwig and Suzuki cross- coupling reactions. Both materials showed higher decomposition temperatures (over 450 °C at 5% weight reduction and HTM 1B exhibited a higher glass transition temperature of 180 °C. Red phosphorescence-based OLED devices were fabricated to analyze the device performances compared to Spiro-NPB and NPB as reference hole transporting materials. Devices consist of hole transporting material as HTM 1B showed better maximum current and power efficiencies of 16.16 cd/A and 11.17 lm/W, at the same time it revealed an improved external quantum efficiency of 13.64%. This efficiency is considerably higher than that of Spiro-NPB and NPB-based reference devices.

Charge carrier transport properties in layer structured hexagonal boron nitride

Directory of Open Access Journals (Sweden)

T. C. Doan

2014-10-01

Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

TiO{sub 2} nanofiber solid-state dye sensitized solar cells with thin TiO{sub 2} hole blocking layer prepared by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Li, Jinwei; Chen, Xi; Xu, Weihe [Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030 (United States); Nam, Chang-Yong, E-mail: cynam@bnl.gov [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973 (United States); Shi, Yong, E-mail: Yong.Shi@stevens.edu [Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030 (United States)

2013-06-01

We incorporated a thin but structurally dense TiO{sub 2} layer prepared by atomic layer deposition (ALD) as an efficient hole blocking layer in the TiO{sub 2} nanofiber based solid-state dye sensitized solar cell (ss-DSSC). The nanofiber ss-DSSCs having ALD TiO{sub 2} layers displayed increased open circuit voltage, short circuit current density, and power conversion efficiency compared to control devices with blocking layers prepared by spin-coating liquid TiO{sub 2} precursor. We attribute the improved photovoltaic device performance to the structural integrity of ALD-coated TiO{sub 2} layer and consequently enhanced hole blocking effect that results in reduced dark leakage current and increased charge carrier lifetime. - Highlights: • TiO{sub 2} blocking locking layer prepared by atomic layer deposition (ALD) method. • ALD-coated TiO{sub 2} layer enhanced hole blocking effect. • ALD blocking layer improved the voltage, current and efficiency. • ALD blocking layer reduced dark leakage current and increased electron lifetime.

Many-body correlation effects in the spatially separated electron and hole layers in the coupled quantum wells

Energy Technology Data Exchange (ETDEWEB)

Babichenko, V.S. [RRC Kurchatov Institute, Kurchatov Sq., 1, 123182 Moscow (Russian Federation); Polishchuk, I.Ya., E-mail: iyppolishchuk@gmail.com [RRC Kurchatov Institute, Kurchatov Sq., 1, 123182 Moscow (Russian Federation); Moscow Institute of Physics and Technology, 141700, 9, Institutskii per., Dolgoprudny, Moscow Region (Russian Federation)

2014-11-15

The many-body correlation effects in the spatially separated electron and hole layers in the coupled quantum wells are investigated. A special case of the many-component electron–hole system is considered. It is shown that if the hole mass is much greater than the electron mass, the negative correlation energy is mainly determined by the holes. The ground state of the system is found to be the 2D electron–hole liquid with the energy smaller than the exciton phase. It is shown that the system decays into the spatially separated neutral electron–hole drops if the initially created charge density in the layers is smaller than the certain critical value n{sub eq}.

TFB:TPDSi2 interfacial layer usable in organic photovoltaic cells

Science.gov (United States)

Marks, Iobin J [Evanston, IL; Hains, Alexander W [Evanston, IL

2011-02-15

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode; an active organic layer comprising an electron-donating organic material and an electron-accepting organic material; and an interfacial layer formed between the anode and active organic layer, where the interfacial layer comprises a hole-transporting polymer characterized with a hole-mobility higher than that of the electron-donating organic material in the active organic layer, and a small molecule that has a high hole-mobility and is capable of crosslinking on contact with air.

Assessing the potential of group 13 and 14 metal/metalloid phthalocyanines as hole transport layers in organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Plint, Trevor; Lessard, Benoît H. [Department of Chemical Engineering and Applied Chemistry, University of Toronto, 200 College Street, Toronto, Ontario M5S 3E5 (Canada); Bender, Timothy P. [Department of Chemical Engineering and Applied Chemistry, University of Toronto, 200 College Street, Toronto, Ontario M5S 3E5 (Canada); Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4 (Canada); Department of Chemistry, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6 (Canada)

2016-04-14

In this study, we have assessed the potential application of group 13 and 14 metal and metalloid phthalocyanines ((X){sub n}-MPcs) and their axially substituted derivatives as hole-transporting layers in organic light emitting diodes (OLEDs). OLEDs studied herein have the generic structure of glass/ITO/(N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) or (X){sub n}-MPc)(50 nm)/Alq{sub 3} (60 nm)/LiF (1 nm)/Al (80 nm), where X is an axial substituent group. OLEDs using chloro aluminum phthalocyanine (Cl-AlPc) showed good peak luminance values of 2620 ± 113 cd/m{sup 2} at 11 V. To our knowledge, Cl-AlPc has not previously been shown to work as a hole transport material (HTL) in OLEDs. Conversely, the di-chlorides of silicon, germanium, and tin phthalocyanine (Cl{sub 2}-SiPc, Cl{sub 2}-GePc, and Cl{sub 2}-SnPc, respectively) showed poor performance compared to Cl-AlPc, having peak luminances of only 38 ± 4 cd/m{sup 2} (12 V), 23 ± 1 cd/m{sup 2} (8.5 V), and 59 ± 5 cd/m{sup 2} (13.5 V), respectively. However, by performing a simple axial substitution of the chloride groups of Cl{sub 2}-SiPc with pentafluorophenoxy groups, the resulting bis(pentafluorophenoxy) silicon phthalocyanine (F{sub 10}-SiPc) containing OLED had a peak luminance of 5141 ± 941 cd/m{sup 2} (10 V), a two order of magnitude increase over its chlorinated precursor. This material showed OLED characteristics approaching those of a baseline OLED based on the well-studied triarylamine NPB. Attempts to attach the pentafluorophenoxy axial group to both SnPc and GePc were hindered by synthetic difficulties and low thermal stability, respectively. In light of the performance improvements observed by simple axial substitution of SiPc in OLEDs, the use of axially substituted MPcs in organic electronic devices remains of continuing interest to us and potentially the field in general.

Light-hole conduction in InGaAs/GaAs strained-layer superlattices

International Nuclear Information System (INIS)

Schirber, J.E.; Fritz, I.J.; Dawson, L.R.

1985-01-01

We report the first observation of light-hole band carriers in In/sub 0.2/Ga/sub 0.8/As/GaAs strained-layer superlattices by direct measurements of their effective mass (m*m/sub o/ = 0.14) using oscillatory magnetoresistance data. Preferential population of light-hole states, due to splitting of the degenerate bulk valence bands by built-in strain, allows this direct observation

Simple solution-processed CuOX as anode buffer layer for efficient organic solar cells

International Nuclear Information System (INIS)

Shen, Wenfei; Yang, Chunpeng; Bao, Xichang; Sun, Liang; Wang, Ning; Tang, Jianguo; Chen, Weichao; Yang, Renqiang

2015-01-01

Graphical abstract: - Highlights: • Simple solution-processed CuO X hole transport layer for efficient organic solar cell. • Good photovoltaic performances as hole transport layer in OSCs with P3HT and PBDTTT-C as donor materials. • The device with CuO X as hole transport layer shows great improved stability compared with that of device with PEDOT:PSS as hole transport layer. - Abstract: A simple, solution-processed ultrathin CuO X anode buffer layer was fabricated for high performance organic solar cells (OSCs). XPS measurement demonstrated that the CuO X was the composite of CuO and Cu 2 O. The CuO X modified ITO glass exhibit a better surface contact with the active layer. The photovoltaic performance of the devices with CuO X layer was optimized by varying the thickness of CuO X films through changing solution concentration. With P3HT:PC 61 BM as the active layer, we demonstrated an enhanced PCE of 4.14% with CuO X anode buffer layer, compared with that of PEDOT:PSS layer. The CuO X layer also exhibits efficient photovoltaic performance in devices with PBDTTT-C:PC 71 BM as the active layer. The long-term stability of CuO X device is better than that of PEDOT:PSS device. The results indicate that the easy solution-processed CuO X film can act as an efficient anode buffer layer for high-efficiency OSCs

Utilizing a Spiro Core with Acridine- and Phenothiazine-Based New Hole Transporting Materials for Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes

Directory of Open Access Journals (Sweden)

Ramanaskanda Braveenth

2018-03-01

Full Text Available Two new hole transporting materials, 2,7-bis(9,9-diphenylacridin-10(9H-yl-9,9′ spirobi[fluorene] (SP1 and 2,7-di(10H-phenothiazin-10-yl-9,9′-spirobi[fluorene] (SP2, were designed and synthesized by using the Buchwald–Hartwig coupling reaction with a high yield percentage of over 84%. Both of the materials exhibited high glass transition temperatures of over 150 °C. In order to understand the device performances, we have fabricated green phosphorescent organic light-emitting diodes (PhOLEDs with SP1 and SP2 as hole transporting materials. Both of the materials revealed improved device properties, in particular, the SP2-based device showed excellent power (34.47 lm/W and current (38.41 cd/A efficiencies when compare with the 4,4′-bis(N-phenyl-1-naphthylaminobiphenyl (NPB-based reference device (30.33 lm/W and 32.83 cd/A. The external quantum efficiency (EQE of SP2 was 13.43%, which was higher than SP1 (13.27% and the reference material (11.45% with a similar device structure. The SP2 hole transporting material provides an effective charge transporting path from anode to emission layer, which is explained by the device efficiencies.

Acoustic transmission resonance and suppression through double-layer subwavelength hole arrays

International Nuclear Information System (INIS)

Liu Zhifeng; Jin Guojun

2010-01-01

We present a theoretical study of acoustic waves passing through double-layer subwavelength hole arrays. The acoustic transmission resonance and suppression are observed. There are three mechanisms responsible for the transmission resonance: the excitation of geometrically induced acoustic surface waves, the Fabry-Perot resonance in a hole cavity (I-FP resonance) and the Fabry-Perot resonance between two plates (II-FP resonance). We can differentiate these mechanisms via the dispersion relation of acoustic modes supported by the double-layer structure. It is confirmed that the coupling between two single-layer perforated plates, associated with longitudinal interval and lateral displacement, plays a crucial role in modulating the transmission properties. The strong coupling between two plates can induce the splitting of the transmission peak, while the decoupling between plates leads to the appearance of transmission suppression. By analyzing the criterion derived for transmission suppression, we conclude that it is the destructive interference between the diffracted waves and the direct transmission waves assisted by the I-FP resonance of the first plate that leads to the decoupling between plates and then the transmission suppression.

Modulating Hole Transport in Multilayered Photocathodes with Derivatized p-Type Nickel Oxide and Molecular Assemblies for Solar-Driven Water Splitting

Energy Technology Data Exchange (ETDEWEB)

Shan, Bing [Department; Sherman, Benjamin D. [Department; Klug, Christina M. [Center; Nayak, Animesh [Department; Marquard, Seth L. [Department; Liu, Qing [Department; Bullock, R. Morris [Center; Meyer, Thomas J. [Department

2017-08-31

We report here a new photocathode composed of a bi-layered doped NiO film topped by a macro-mesoporous ITO (ioITO) layer with molecular assemblies attached to the ioITO surface. The NiO film containing a 2% K+ doped NiO inner layer and a 2% Cu2+ doped NiO outer layer provides sufficient driving force for hole transport after injection to NiO by the molecular assembly. The tri-layered oxide, NiK0.02O | NiCu0.02O | ioITO, sensitized by a ruthenium polypyridyl dye and functionalized with a nickel-based hydrogen evolution catalyst, outperforms its counterpart, NiO | NiO | ioITO, in photocatalytic hydrogen evolution from water over a period of several hours with a Faradaic yield of ~90%.

Picosecond kinetics of the electron-hole layers formation in wide-bandgap II-VI type-II heterostructures

Energy Technology Data Exchange (ETDEWEB)

Filatov, E.V.; Zaitsev, S.V.; Tartakovskii, I.I.; Maksimov, A.A. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow region (Russian Federation); Yakovlev, D.R. [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Experimentelle Physik II, Technische Universitaet Dortmund (Germany); Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, 38106 Braunschweig (Germany)

2010-06-15

Considerable slowdown of luminescence kinetics of the direct optical transition was discovered in ZnSe/BeTe type-II heterostructures under high levels of optical pumping. The effect is attributed to forming of a potential barrier for holes in the ZnSe layer due to band bending at high densities of spatially separated carriers. That results in a longer time of the photoexcited holes energy relaxation to their ground state in the BeTe layer. The decrease of overlapping of electron and hole wavefunctions in the ZnSe layer in thick ZnSe/BeTe structures at high levels of optical excitation reveals an additional important effect, that leads to sufficient retardation of radiative recombination time for photoexcited carriers (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Energy Technology Data Exchange (ETDEWEB)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2016-09-05

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Science.gov (United States)

Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

2016-09-01

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

Enhancement of Photovoltaic Performance by Utilizing Readily Accessible Hole Transporting Layer of Vanadium(V) Oxide Hydrate in a Polymer-Fullerene Blend Solar Cell.

Science.gov (United States)

Jiang, Youyu; Xiao, Shengqiang; Xu, Biao; Zhan, Chun; Mai, Liqiang; Lu, Xinhui; You, Wei

2016-05-11

Herein, a successful application of V2O5·nH2O film as hole transporting layer (HTL) instead of PSS in polymer solar cells is demonstrated. The V2O5·nH2O layer was spin-coated from V2O5·nH2O sol made from melting-quenching sol-gel method by directly using vanadium oxide powder, which is readily accessible and cost-effective. V2O5·nH2O (n ≈ 1) HTL is found to have comparable work function and smooth surface to that of PSS. For the solar cell containing V2O5·nH2O HTL and the active layer of the blend of a novel polymer donor (PBDSe-DT2PyT) and the acceptor of PC71BM, the PCE was significantly improved to 5.87% with a 30% increase over 4.55% attained with PSS HTL. Incorporation of V2O5·nH2O as HTL in the polymer solar cell was found to enhance the crystallinity of the active layer, electron-blocking at the anode and the light-harvest in the wavelength range of 400-550 nm in the cell. V2O5·nH2O HTL improves the charge generation and collection and suppress the charge recombination within the PBDSe-DT2PyT:PC71BM solar cell, leading to a simultaneous enhancement in Voc, Jsc, and FF. The V2O5·nH2O HTL proposed in this work is envisioned to be of great potential to fabricate highly efficient PSCs with low-cost and massive production.

Ultrathin Cu2O as an efficient inorganic hole transporting material for perovskite solar cells

KAUST Repository

Yu, Weili

2016-02-18

We demonstrate that ultrathin P-type Cu2O thin films fabricated by a facile thermal oxidation method can serve as a promising hole-transporting material in perovskite solar cells. Following a two-step method, inorganic-organic hybrid perovskite solar cells were fabricated and a power conversion efficiency of 11.0% was achieved. We find that the thickness and properties of Cu2O layers must be precisely tuned in order to achieve the optimal solar cell performance. The good performance of such perovskite solar cells can be attributed to the unique properties of ultrathin Cu2O, including high hole mobility, good energy level alignment with CH3NH3PbI3, and longer lifetime of photo-excited carriers. Combining merits of low cost, facile synthesis, and high device performance, ultrathin Cu2O films fabricated via thermal oxidation hold promise for facilitating the developments of industrial-scale perovskite solar cells.

Transparent and Highly Responsive Phototransistors Based on a Solution-Processed, Nanometers-Thick Active Layer, Embedding a High-Mobility Electron-Transporting Polymer and a Hole-Trapping Molecule.

Science.gov (United States)

Caranzi, Lorenzo; Pace, Giuseppina; Sassi, Mauro; Beverina, Luca; Caironi, Mario

2017-08-30

Organic materials are suitable for light sensing devices showing unique features such as low cost, large area, and flexibility. Moreover, transparent photodetectors are interesting for smart interfaces, windows, and display-integrated electronics. The ease of depositing ultrathin organic films with simple techniques enables low light absorbing active layers, resulting in the realization of transparent devices. Here, we demonstrate a strategy to obtain high efficiency organic photodetectors and phototransistors based on transparent active layers with a visible transmittance higher than 90%. The photoactive layer is composed of two phases, each a few nanometers thick. First, an acceptor polymer, which is a good electron-transporting material, on top of which a small molecule donor material is deposited, forming noncontinuous domains. The small molecule phase acts as a trap for holes, thus inducing a high photoconductive gain, resulting in a high photoresponsivity. The organic transparent detectors proposed here can reach very high external quantum efficiency and responsivity values, which in the case of the phototransistors can be as high as ∼74000% and 340 A W -1 at 570 nm respectively, despite an absorber total thickness below 10 nm. Moreover, frequency dependent 2D photocurrent mapping allows discrimination between the contribution of a fast but inefficient and highly spatially localized photoinduced injection mechanism at the electrodes, and the onset of a slower and spatially extended photoconductive process, leading to high responsivity.

Electron and hole transport in ambipolar, thin film pentacene transistors

International Nuclear Information System (INIS)

Saudari, Sangameshwar R.; Kagan, Cherie R.

2015-01-01

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV

Electron and hole transport in ambipolar, thin film pentacene transistors

Energy Technology Data Exchange (ETDEWEB)

Saudari, Sangameshwar R. [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Kagan, Cherie R. [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

2015-01-21

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.

Hybrid UV-Ozone-Treated rGO-PEDOT:PSS as an Efficient Hole Transport Material in Inverted Planar Perovskite Solar Cells

Science.gov (United States)

Wang, Shuying; Huang, Xiaona; Sun, Haoxuan; Wu, Chunyang

2017-12-01

Inverted planar perovskite solar cells (PSCs), which are regarded as promising devices for new generation of photovoltaic systems, show many advantages, such as low-temperature film formation, low-cost fabrication, and smaller hysteresis compared with those of traditional n-i-p PSCs. As an important carrier transport layer in PSCs, the hole transport layer (HTL) considerably affects the device performance. Therefore, HTL modification becomes one of the most critical issues in improving the performance of PSCs. In this paper, we report an effective and environmentally friendly UV-ozone treatment method to enhance the hydrophilia of reduced graphene oxide (rGO) with its excellent electrical performance. The treated rGO was applied to doped poly(3,4-ethylenedioxythiophene) poly(styrene-sulfonate) (PEDOT:PSS) as HTL material of PSCs. Consequently, the performance of rGO/PEDOT:PSS-doped PSCs was improved significantly, with power conversion efficiency (PCE) of 10.7%, Jsc of 16.75 mA/cm2, Voc of 0.87 V, and FF of 75%. The PCE of this doped PSCs was 27% higher than that of the PSCs with pristine PEDOT:PSS as HTL. This performance was attributed to the excellent surface morphology and optimized hole mobility of the solution-processable rGO-modified PEDOT:PSS.

I. Hole-transporting dendrimers and their use in organic light-emitting devices (OLEDs) and II. Novel layered catalysts containing bipyridinium and zero-valent metal species

Science.gov (United States)

Koene, Shannon Carol

A series of polyaromatic ether/ester dendrimers containing a hole transporting naphthylphenylbenzyl amine at the periphery and a variety of fluorescent dyes at the core has been studied in an effort to observe energy transfer in these species. The dyes incorporated in these dendrimers include 1,4-dihydroxyanthraquinone (quinizarin), Coumarin 343, and a benzopentathiophene. These dendrimers have been incorporated into both single layer and heterostructure organic light emitting devices (OLEDs). In the case of first generation dendrimer OLEDs, excimer/exciplex formation was predominant. In third generation dendrimers, complete energy transfer from the periphery to the dye at the core was observed both in photoluminescence spectra and electroluminescence in OLEDs. Dendrimers containing different dye cores can be combined to achieve color mixing/tuning. In addition, layered catalysts were prepared via both covalent and electrostatic means to achieve the catalytic production of hydrogen peroxide from hydrogen and oxygen. Covalent catalysts were prepared by first growing layers of zirconium and a bipyridinium containing bisphosphonate onto silica particles. Palladium and/or platinum was ion-exchanged into the structure and reduced to the zero valent metal by hydrogen gas. A second set of catalysts was prepared by electrostatically depositing polycations/polyanions onto carboxylate or amine functionalized polystyrene microspheres. Anionic colloidal particles were adsorbed to the polycationic surface. An octacationic viologen oligomer was used in an attempt to increase the affinity of adsorption of the Pd particles to the surface of the microspheres. Catalytic studies of both types of catalysts are herein reported.

Plasma-assisted atomic layer deposition of TiO2 compact layers for flexible mesostructured perovskite solar cells

NARCIS (Netherlands)

Zardetto, V.; Di Giacomo, F.; Lucarelli, G.; Kessels, W.M.M.; Brown, T.M.; Creatore, M.

2017-01-01

In mesostructured perovskite solar cell devices, charge recombination processes at the interface between the transparent conductive oxide, perovskite and hole transport layer are suppressed by depositing an efficient compact TiO2 blocking layer. In this contribution we investigate the role of the

Single photon transport by a moving atom through sub-wavelength hole

International Nuclear Information System (INIS)

Afanasiev, A.E.; Melentiev, P.N.; Kuzin, A.A.; Kalatskiy, A.Yu.; Balykin, V.I.

2017-01-01

The results of investigation of photon transport through the subwavelength hole in the opaque screen by using single neutral atom are represented. The basis of the proposed and implemented method is the absorption of a photon by a neutral atom immediately before the subwavelength aperture, traveling of the atoms through the hole and emission of a photon on the other side of the screen. Realized method is the alternative approach to existing for photon transport through a subwavelength aperture: 1) self-sustained transmittance of a photon through the aperture according to the Bethe’s model; 2) extra ordinary transmission because of surface-plasmon excitation.

Simple solution-processed CuO{sub X} as anode buffer layer for efficient organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Shen, Wenfei [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China); Institute of Hybrid Materials, The Growing Base for State Key Laboratory, Qingdao University, 308 Ningxia Road, Qingdao 266071 (China); Yang, Chunpeng [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China); Bao, Xichang, E-mail: baoxc@qibebt.ac.cn [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China); Sun, Liang; Wang, Ning [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China); Tang, Jianguo [Institute of Hybrid Materials, The Growing Base for State Key Laboratory, Qingdao University, 308 Ningxia Road, Qingdao 266071 (China); Chen, Weichao [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China); Yang, Renqiang, E-mail: yangrq@qibebt.ac.cn [CAS Key Laboratory of Bio-based Materials, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao 266101 (China)

2015-10-15

Graphical abstract: - Highlights: • Simple solution-processed CuO{sub X} hole transport layer for efficient organic solar cell. • Good photovoltaic performances as hole transport layer in OSCs with P3HT and PBDTTT-C as donor materials. • The device with CuO{sub X} as hole transport layer shows great improved stability compared with that of device with PEDOT:PSS as hole transport layer. - Abstract: A simple, solution-processed ultrathin CuO{sub X} anode buffer layer was fabricated for high performance organic solar cells (OSCs). XPS measurement demonstrated that the CuO{sub X} was the composite of CuO and Cu{sub 2}O. The CuO{sub X} modified ITO glass exhibit a better surface contact with the active layer. The photovoltaic performance of the devices with CuO{sub X} layer was optimized by varying the thickness of CuO{sub X} films through changing solution concentration. With P3HT:PC{sub 61}BM as the active layer, we demonstrated an enhanced PCE of 4.14% with CuO{sub X} anode buffer layer, compared with that of PEDOT:PSS layer. The CuO{sub X} layer also exhibits efficient photovoltaic performance in devices with PBDTTT-C:PC{sub 71}BM as the active layer. The long-term stability of CuO{sub X} device is better than that of PEDOT:PSS device. The results indicate that the easy solution-processed CuO{sub X} film can act as an efficient anode buffer layer for high-efficiency OSCs.

Hole-doping of mechanically exfoliated graphene by confined hydration layers

Institute of Scientific and Technical Information of China (English)

Tjeerd R. J. Bollmann[1,2; Liubov Yu. Antipina[3,4; Matthias Temmen[2; Michael Reichling[2; Pavel B. Sorokin[5

2015-01-01

By the use of non-contact atomic force microscopy （NC-AFM） and Kelvin probe force microscopy （KPFM）, we measure the local surface potential of mechanically exfoliated graphene on the prototypical insulating hydrophilic substrate of CAF2（111）. Hydration layers confined between the graphene and the CaF2 substrate, resulting from the graphene＇s preparation under ambient conditions on the hydrophilic substrate surface, are found to electronically modify the graphene as the material＇s electron density transfers from graphene to the hydration layer. Density functional theory （DFT） calculations predict that the first 2 to 3 water layers adjacent to the graphene hole-dope the graphene by several percent of a unit charge per unit cell.

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

Science.gov (United States)

Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

2017-07-01

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

Effect of hole-transporting materials on the photovoltaic performance and stability of all-ambient-processed perovskite solar cells

Institute of Scientific and Technical Information of China (English)

Nanaji Islavath; S Saroja; K Srinivas Reddy; P C Harikesh; G Veerappan; Shrikant V Joshi; Easwaramoorthi Ramasamy

2017-01-01

High-efficiency perovskite solar cells (PSCs) reported hitherto have been mostly prepared in a moisture and oxygen-free glove-box atmosphere,which hampers upscaling and real-time performance assessment of this exciting photovoltaic technology.In this work,we have systematically studied the feasibility of allambient-processing of PSCs and evaluated their photovoltaic performance.It has been shown that phasepure crystalline tetragonal MAPbI3 perovskite films are instantly formed in ambient air at room temperature by a two-step spin coating process,undermining the need for dry atmosphere and post-annealing.All-ambient-processed PSCs with a configuration of FTO/TiO2/MAPbI3/Spiro-OMeTAD/Au achieve opencircuit voltage (990 mV) and short-circuit current density (20.31 mA/cm2) comparable to those of best reported glove-box processed devices.Nevertheless,device power conversion efficiency is still constrained at 5％ by the unusually low fill-factor of 0.25.Dark current-voltage characteristics reveal poor conductivity of hole-transporting layer caused by lack of oxidized spiro-OMeTAD species,resulting in high seriesresistance and decreased fill-factor,The study also establishes that the above limitations can be readily overcome by employing an inorganic p-type semiconductor,copper thiocyanate,as ambient-processable hole-transporting layer to yield a fill-factor of 0.54 and a power conversion efficiency of 7.19％.The present findings can have important implications in industrially viable fabrication of large-area PSCs.

The role of the hole-extraction layer in determining the operational stability of a polycarbazole:fullerene bulk-heterojunction photovoltaic device

Science.gov (United States)

Bovill, E.; Scarratt, N.; Griffin, J.; Yi, H.; Iraqi, A.; Buckley, A. R.; Kingsley, J. W.; Lidzey, D. G.

2015-02-01

We have made a comparative study of the relative operational stability of bulk-heterojunction organic photovoltaic (OPV) devices utilising different hole transport layers (HTLs). OPV devices were fabricated based on a blend of the polymer PCDTBT with the fullerene PC70BM, and incorporated the different HTL materials PEDOT:PSS, MoOx and V2O5. Following 620 h of irradiation by light from a solar simulator, we find that devices using the PEDOT:PSS HTL retained the highest efficiency, having a projected T80 lifetime of 14 500 h.

Observation of Blobs and Holes in the Boundary Plasma of EAST Tokamak

DEFF Research Database (Denmark)

Yan, Ning; Xu, Guosheng; Zhang, Wei

2011-01-01

Intermittent convective transport at the edge and in the scrape-off layer (SOL) of EAST was investigated by using fast reciprocating Langmuir probe. Holes, as part of plasma structures, were detected for the first time inside the shear layer. The amplitude probability distribution function...

Recombination zone in white organic light emitting diodes with blue and orange emitting layers

Science.gov (United States)

Tsuboi, Taiju; Kishimoto, Tadashi; Wako, Kazuhiro; Matsuda, Kuniharu; Iguchi, Hirofumi

2012-10-01

White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron-hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.

Shelf life stability comparison in air for solution processed pristine PDPP3T polymer and doped spiro-OMeTAD as hole transport layer for perovskite solar cell

Directory of Open Access Journals (Sweden)

Ashish Dubey

2016-06-01

Full Text Available This data in brief includes forward and reverse scanned current density–voltage (J–V characteristics of perovskite solar cells with PDPP3T and spiro-OMeTAD as HTL, stability testing conditions of perovskite solar cell shelf life in air for both PDPP3T and spiro-OMeTAD as HTL as per the description in Ref. [1], and individual J–V performance parameters acquired with increasing time exposed in ambient air are shown for both type of devices using PDPP3T and spiro-OMeTAD as HTL. The data collected in this study compares the device stability with time for both PDPP3T and spiro-OMeTAD based perovskite solar cells and is directly related to our research article “solution processed pristine PDPP3T polymer as hole transport layer for efficient perovskite solar cells with slower degradation” [2].

Charge carriers bulk recombination instead of electroplex emission after their tunneling through hole-blocking layer in OLEDs

Science.gov (United States)

Yang, S. Y.; Liu, D.; Jiang, Y.; Teng, F.; Xu, Z.; Hou, Y.; Xu, X. R.

2006-08-01

Charge carriers bulk recombination instead of forming electroplex after their tunneling through a hole-blocking layer, i.e. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), in organic electroluminescence (EL) device ITO/poly-(N-vinyl-carbazole)(PVK)/BCP/tris(8-hydroxyquinoline) aluminum (Alq3)/Al is reported. By changing the thickness of BCP layer, one can find that high electric fields enhance the tunneling process of holes accumulated at the PVK/BCP interface into BCP layer instead of forming “electroplex emission” as reported earlier in literatures. Our experimental data show that charge carriers bulk recombination takes place in both PVK layer and BCP layer, and even in Alq3 layer when BCP layer is thin enough. Further, it is suggested that PVK is the origin of the emission shoulder at 595 nm in the EL spectra of trilayer device ITO/PVK/BCP/Alq3/Al.

Emergence of high-mobility minority holes in the electrical transport of the Ba (Fe1 -xMnxAs )2 iron pnictides

Science.gov (United States)

Urata, T.; Tanabe, Y.; Huynh, K. K.; Heguri, S.; Oguro, H.; Watanabe, K.; Tanigaki, K.

2015-05-01

In Fe pnictide (Pn) superconducting materials, neither Mn nor Cr doping to the Fe site induces superconductivity, even though hole carriers are generated. This is in strong contrast with the superconductivity appearing when holes are introduced by alkali-metal substitution on the insulating blocking layers. We investigate in detail the effects of Mn doping on magnetotransport properties in Ba (Fe1 -xMnxAs )2 for elucidating the intrinsic reason. The negative Hall coefficient for x =0 estimated in the low magnetic field (B ) regime gradually increases as x increases, and its sign changes to a positive one at x =0.020 . Hall resistivities as well as simultaneous interpretation using the magnetoconductivity tensor including both longitudinal and transverse transport components clarify that minority holes with high mobility are generated by the Mn doping via spin-density wave transition at low temperatures, while original majority electrons and holes residing in the paraboliclike Fermi surfaces of the semimetallic Ba (FeAs )2 are negligibly affected. Present results indicate that the mechanism of hole doping in Ba (Fe1 -xMnxAs )2 is greatly different from that of the other superconducting FePn family.

Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells.

Science.gov (United States)

Liu, Jun; Xue, Yuhua; Gao, Yunxiang; Yu, Dingshan; Durstock, Michael; Dai, Liming

2012-05-02

By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs(2)CO(3) to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tunable transport gap in phosphorene.

Science.gov (United States)

Das, Saptarshi; Zhang, Wei; Demarteau, Marcel; Hoffmann, Axel; Dubey, Madan; Roelofs, Andreas

2014-10-08

In this article, we experimentally demonstrate that the transport gap of phosphorene can be tuned monotonically from ∼0.3 to ∼1.0 eV when the flake thickness is scaled down from bulk to a single layer. As a consequence, the ON current, the OFF current, and the current ON/OFF ratios of phosphorene field effect transistors (FETs) were found to be significantly impacted by the layer thickness. The transport gap was determined from the transfer characteristics of phosphorene FETs using a robust technique that has not been reported before. The detailed mathematical model is also provided. By scaling the thickness of the gate oxide, we were also able to demonstrate enhanced ambipolar conduction in monolayer and few layer phosphorene FETs. The asymmetry of the electron and the hole current was found to be dependent on the layer thickness that can be explained by dynamic changes of the metal Fermi level with the energy band of phosphorene depending on the layer number. We also extracted the Schottky barrier heights for both the electron and the hole injection as a function of the layer thickness. Finally, we discuss the dependence of field effect hole mobility of phosphorene on temperature and carrier concentration.

Steering the Properties of MoOx Hole Transporting Layers in OPVs and OLEDs: Interface Morphology vs. Electronic Structure

Directory of Open Access Journals (Sweden)

Wouter Marchal

2017-01-01

Full Text Available The identification, fine‐tuning, and process optimization of appropriate hole transporting layers (HTLs for organic solar cells is indispensable for the production of efficient and sustainable functional devices. In this study, the optimization of a solution‐processed molybdenum oxide (MoOx layer fabricated from a combustion precursor is carried out via the introduction of zirconium and tin additives. The evaluation of the output characteristics of both organic photovoltaic (OPV and organic light emitting diode (OLED devices demonstrates the beneficial influence upon the addition of the Zr and Sn ions compared to the generic MoOx precursor. A dopant effect in which the heteroatoms and the molybdenum oxide form a chemical identity with fundamentally different structural properties could not be observed, as the additives do not affect the molybdenum oxide composition or electronic band structure. An improved surface roughness due to a reduced crystallinity was found to be a key parameter leading to the superior performance of the devices employing modified HTLs.

Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Swensen, James S.; Wang, Liang (Frank); Rainbolt, James E.; Koech, Phillip K.; Polikarpov, Evgueni; Gaspar, Daniel J.; Padmaperuma, Asanga B.

2012-12-01

We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.

Effects of Collisionality on the Nonlinear Characteristics of Boundary Turbulence and Blob/hole Transport in Tokamak Plasmas

Energy Technology Data Exchange (ETDEWEB)

Li, J.; Yasuaki, K., E-mail: lijq@energy.kyoto-u.ac.jp [Kyoto University, Kyoto (Japan); Cheng, J.; Longwen, Y.; Jiaqi, D. [Southwestern Institute of Physics, Chengdu (China)

2012-09-15

Full text: Blob/hole dynamics near tokamak separatrix is of striking importance in determining the boundary transport. Based on simulations using an extended 2-region (edge/SOL) fluid model, we found that blob/hole dynamics are sensitively influenced by the plasma collisionality, i.e., ion-electron and ion-neutral collisions. Namely, the holes are enhanced in highly collisional edge whereas the blobs are weakened at the SOL, causing larger particle convection. These blob/hole dynamics are closely correlated with potential dipoles. The trends are experimentally evidenced on the HL-2A tokamak. Moreover, as the neutral-ion collision increases, the blobs at the SOL tend to develop into streamers propagating outwards with reduced amplitude while the holes inwards are suppressed, showing a key role in nonlinear structure regulation and resultant transport suppression. Results suggest that adjusting the plasma collisionality by fueling, e.g., gas puffing, could serve as a method to nonlinearly select turbulent structures, i.e., blobs, holes or streamers, to access the control of boundary transport. (author)

Characterization of transport phenomena in porous transport layers using X-ray microtomography

Science.gov (United States)

Hasanpour, S.; Hoorfar, M.; Phillion, A. B.

2017-06-01

Among different methods available for estimating the transport properties of porous transport layers (PTLs) of polymer electrolyte membrane fuel cells, X-ray micro computed tomography (X-μCT) imaging in combination with image-based numerical simulation has been recognized as a viable tool. In this study, four commercially-available single-layer and dual-layer PTLs are analyzed using this method in order to compare and contrast transport properties between different PTLs, as well as the variability within a single sheet. Complete transport property datasets are created for each PTL. The simulation predictions indicate that PTLs with high porosity show considerable variability in permeability and effective diffusivity, while PTLs with low porosity do not. Furthermore, it is seen that the Tomadakis-Sotirchos (TS) analytical expressions for porous media match the image-based simulations when porosity is relatively low but predict higher permeability and effective diffusivity for porosity values greater than 80%. Finally, the simulations show that cracks within MPL of dual-layer PTLs have a significant effect on the overall permeability and effective diffusivity of the PTLs. This must be considered when estimating the transport properties of dual-layer PTLs. These findings can be used to improve macro-scale models of product and reactant transport within fuel cells, and ultimately, fuel cell efficiency.

Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Liu, Jun; Gao, Yunxiang; Yu, Dingshan; Dai, Liming [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Xue, Yuhua [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Institute of Advanced Materials for Nano-Bio Applications, School of Ophthalmology and Optometry, Wenzhou Medical College, Zhejiang 325027 (China); Durstock, Michael [Materials and Manufacturing Directorate, Air Force Research Laboratory, RXBP, Wright-Patterson Air Force Base, Ohio 45433 (United States)

2012-05-02

By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs{sub 2}CO{sub 3} to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Solution-Processed rGO/AgNPs/rGO Sandwich Structure as a Hole Extraction Layer for Polymer Solar Cells

Directory of Open Access Journals (Sweden)

Quang Trung Tran

2015-01-01

Full Text Available We found that inserting silver nanoparticles (AgNPs between two layers of reduced grapheme oxide (rGO has an effect on tailoring the work function of rGO. The utilization of rGO/AgNPs/rGO sandwich structure as the hole extraction layer in polymer solar cells is demonstrated. Solution-processable fabrication of this sandwich structure at the ITO/active layer interface facilitates the extraction of hole from active layer into ITO anode because of lowering the barrier level alignment at the interface. It results in an improvement of the short circuit current density and the overall photovoltaic performance.

The inversion layer of electric fields and electron phase-space-hole structure during two-dimensional collisionless magnetic reconnection

International Nuclear Information System (INIS)

Chen Lijen; Lefebvre, Bertrand; Torbert, Roy B.; Daughton, William S.

2011-01-01

Based on two-dimensional fully kinetic simulations that resolve the electron diffusion layer in undriven collisionless magnetic reconnection with zero guide field, this paper reports the existence and evolution of an inversion layer of bipolar electric fields, its corresponding phase-space structure (an electron-hole layer), and the implication to collisionless dissipation. The inversion electric field layer is embedded in the layer of bipolar Hall electric field and extends throughout the entire length of the electron diffusion layer. The electron phase-space hole structure spontaneously arises during the explosive growth phase when there exist significant inflows into the reconnection layer, and electrons perform meandering orbits across the layer while being cyclotron-turned toward the outflow directions. The cyclotron turning of meandering electrons by the magnetic field normal to the reconnection layer is shown to be a primary factor limiting the current density in the region where the reconnection electric field is balanced by the gradient (along the current sheet normal) of the off-diagonal electron pressure-tensor.

Brief communication "Stratospheric winds, transport barriers and the 2011 Arctic ozone hole"

Directory of Open Access Journals (Sweden)

M. J. Olascoaga

2012-12-01

Full Text Available The Arctic stratosphere throughout the late winter and early spring of 2011 was characterized by an unusually severe ozone loss, resulting in what has been described as an ozone hole. The 2011 ozone loss was made possible by unusually cold temperatures throughout the Arctic stratosphere. Here we consider the issue of what constitutes suitable environmental conditions for the formation and maintenance of a polar ozone hole. Our discussion focuses on the importance of the stratospheric wind field and, in particular, the importance of a high latitude zonal jet, which serves as a meridional transport barrier both prior to ozone hole formation and during the ozone hole maintenance phase. It is argued that stratospheric conditions in the boreal winter/spring of 2011 were highly unusual inasmuch as in that year Antarctic-like Lagrangian dynamics led to the formation of a boreal ozone hole.

Development of organic-inorganic double hole-transporting material for high performance perovskite solar cells

Science.gov (United States)

Jo, Jea Woong; Seo, Myung-Seok; Jung, Jae Woong; Park, Joon-Suh; Sohn, Byeong-Hyeok; Ko, Min Jae; Son, Hae Jung

2018-02-01

The control of the optoelectronic properties of the interlayers of perovskite solar cells (PSCs) is crucial for achieving high photovoltaic performances. Of the solution-processable interlayer candidates, NiOx is considered one of the best inorganic hole-transporting layer (HTL) materials. However, the power conversion efficiencies (PCEs) of NiOx-based PSCs are limited by the unfavorable contact between perovskite layers and NiOx HTLs, the high density of surface trap sites, and the inefficient charge extraction from perovskite photoactive layers to anodes. Here, we introduce a new organic-inorganic double HTL consisting of a Cu:NiOx thin film passivated by a conjugated polyelectrolyte (PhNa-1T) film. This double HTL has a significantly lower pinhole density and forms better contact with perovskite films, which results in enhanced charge extraction. As a result, the PCEs of PSCs fabricated with the double HTL are impressively improved up to 17.0%, which is more than 25% higher than that of the corresponding PSC with a Cu:NiOx HTL. Moreover, PSCs with the double HTLs exhibit similar stabilities under ambient conditions to devices using inorganic Cu:NiOx. Therefore, this organic-inorganic double HTL is a promising interlayer material for high performance PSCs with high air stability.

Post-merger evolution of a neutron star-black hole binary with neutrino transport

Science.gov (United States)

Foucart, Francois; O'Connor, Evan; Roberts, Luke; Duez, Matthew D.; Haas, Roland; Kidder, Lawrence E.; Ott, Christian D.; Pfeiffer, Harald P.; Scheel, Mark A.; Szilagyi, Bela

2015-06-01

We present a first simulation of the post-merger evolution of a black hole-neutron star binary in full general relativity using an energy-integrated general-relativistic truncated moment formalism for neutrino transport. We describe our implementation of the moment formalism and important tests of our code, before studying the formation phase of an accretion disk after a black hole-neutron star merger. We use as initial data an existing general-relativistic simulation of the merger of a neutron star of mass 1.4 M⊙ with a black hole of mass 7 M⊙ and dimensionless spin χBH=0.8 . Comparing with a simpler leakage scheme for the treatment of the neutrinos, we find noticeable differences in the neutron-to-proton ratio in and around the disk, and in the neutrino luminosity. We find that the electron neutrino luminosity is much lower in the transport simulations, and that both the disk and the disk outflows are less neutron rich. The spatial distribution of the neutrinos is significantly affected by relativistic effects, due to large velocities and curvature in the regions of strongest emission. Over the short time scale evolved, we do not observe purely neutrino-driven outflows. However, a small amount of material (3 ×10-4M⊙ ) is ejected in the polar region during the circularization of the disk. Most of that material is ejected early in the formation of the disk, and is fairly neutron rich (electron fraction Ye˜0.15 - 0.25 ). Through r-process nucleosynthesis, that material should produce high-opacity lanthanides in the polar region, and could thus affect the light curve of radioactively powered electromagnetic transients. We also show that by the end of the simulation, while the bulk of the disk remains neutron rich (Ye˜0.15 - 0.2 and decreasing), its outer layers have a higher electron fraction: 10% of the remaining mass has Ye>0.3 . As that material would be the first to be unbound by disk outflows on longer time scales, and as composition evolution is

Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin cerium fluoride buffer layer

Science.gov (United States)

Lu, Hsin-Wei; Kao, Po-Ching; Chu, Sheng-Yuan

2016-09-01

In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3 film as an ultra-thin buffer layer between the ITO and NPB hole transport layer, with the structure configuration ITO/CeF3 (1 nm)/NPB (40 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The work function increased from 4.8 eV (standard ITO electrode) to 5.2 eV (1-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The turn-on voltage decreased from 4.2 V to 4.0 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 10820 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.5 cd/A when the 1-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

Characterisation of different hole transport materials as used in organic p-i-n solar cells

Energy Technology Data Exchange (ETDEWEB)

Pfuetzner, Steffen; Petrich, Annette; Koch, Maik; Riede, Moritz; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany); Malbrich, Christine [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Dresden (Germany); Hildebrandt, Dirk; Pfeiffer, Martin [Heliatek GmbH, Dresden (Germany)

2008-07-01

This work focuses on the replacement of hole transport material MeO-TPD, which has been used so far in organic p-i-n- solar cells despite its has unfavourable behaviour at elevated temperatures. For this reason, different characterisation and investigations of the hole transport materials PV-TPD, PV-TPDoM, Di-NPB and MeO-Spiro-TPD were done, i.e. dopability, hole mobility, absorption, reflection, cyclic voltametry and glass transition temperature were measured. With simplified structures, e.g. m-i-p diodes, and simplified solar cells, consisting of the blue absorbing fullerene C{sub 60} as acceptor and the transparent donor material 4P-TPD, further specific material properties were determined.

Qubit transport model for unitary black hole evaporation without firewalls*

Science.gov (United States)

Osuga, Kento; Page, Don N.

2018-03-01

We give an explicit toy qubit transport model for transferring information from the gravitational field of a black hole to the Hawking radiation by a continuous unitary transformation of the outgoing radiation and the black hole gravitational field. The model has no firewalls or other drama at the event horizon, and it avoids a counterargument that has been raised for subsystem transfer models as resolutions of the firewall paradox. Furthermore, it fits the set of six physical constraints that Giddings has proposed for models of black hole evaporation. It does utilize nonlocal qubits for the gravitational field but assumes that the radiation interacts locally with these nonlocal qubits, so in some sense the nonlocality is confined to the gravitational sector. Although the qubit model is too crude to be quantitatively correct for the detailed spectrum of Hawking radiation, it fits qualitatively with what is expected.

Electronic structure and molecular orbital study of hole-transport material triphenylamine derivatives

International Nuclear Information System (INIS)

Wang, B.-C.; Liao, H.-R.; Chang, J.-C.; Chen Likey; Yeh, J.-T.

2007-01-01

Recently, triphenylamine (TPA), 4,4'-bis(phenyl-m-tolylamino)biphenyl (TPD), 4,4'-bis(1-naphthylphenylamino)biphenyl (NPB) and their derivatives are widely used in the organic light-emitting diode (OLED) devices as a hole-transporting material (HTM) layer. We have optimized twenty different structures of HTM materials by using density functional theory (DFT), B3LYP/6-31G method. All these different structures contain mono-amine and diamine TPA derivatives. The energies of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) along with molecular orbitals for these HTMs are also determined. We have found that the central amine nitrogen atom and the phenyl ring, which is next to the central amine nitrogen atom, show significant contribution to the HOMO and LUMO, respectively. The sum of the calculated bond angles (α+β+γ) of the central amine nitrogen atom has been applied to describe the bonding and the energy difference for HOMO and LUMO in these TPA derivatives. Electronic structure calculations have been performed for these TPA derivatives. Again, the LCAO-MO patterns of HOMO and LUMO levels of these derivatives are used to investigate their electron density. A series of electron-transporting steps are predicted for these compounds employing these calculated results

One-Dimensional Electron Transport Layers for Perovskite Solar Cells

Directory of Open Access Journals (Sweden)

Ujwal K. Thakur

2017-04-01

Full Text Available The electron diffusion length (Ln is smaller than the hole diffusion length (Lp in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D structures such as nanowires (NWs and nanotubes (NTs as electron transport layers (ETLs is a promising method of achieving high performance halide perovskite solar cells (HPSCs. ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs. This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells.

One-Dimensional Electron Transport Layers for Perovskite Solar Cells

Science.gov (United States)

Thakur, Ujwal K.; Kisslinger, Ryan; Shankar, Karthik

2017-01-01

The electron diffusion length (Ln) is smaller than the hole diffusion length (Lp) in many halide perovskite semiconductors meaning that the use of ordered one-dimensional (1D) structures such as nanowires (NWs) and nanotubes (NTs) as electron transport layers (ETLs) is a promising method of achieving high performance halide perovskite solar cells (HPSCs). ETLs consisting of oriented and aligned NWs and NTs offer the potential not merely for improved directional charge transport but also for the enhanced absorption of incoming light and thermodynamically efficient management of photogenerated carrier populations. The ordered architecture of NW/NT arrays affords superior infiltration of a deposited material making them ideal for use in HPSCs. Photoconversion efficiencies (PCEs) as high as 18% have been demonstrated for HPSCs using 1D ETLs. Despite the advantages of 1D ETLs, there are still challenges that need to be overcome to achieve even higher PCEs, such as better methods to eliminate or passivate surface traps, improved understanding of the hetero-interface and optimization of the morphology (i.e., length, diameter, and spacing of NWs/NTs). This review introduces the general considerations of ETLs for HPSCs, deposition techniques used, and the current research and challenges in the field of 1D ETLs for perovskite solar cells. PMID:28468280

Methods for producing thin film charge selective transport layers

Science.gov (United States)

Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

2018-01-02

Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

Highly efficient organic solar Cells based on a robust room-temperature solution-processed copper iodide hole transporter

KAUST Repository

Zhao, Kui; Ngongang Ndjawa, Guy Olivier; Jagadamma, Lethy Krishnan; El Labban, Abdulrahman; Hu, Hanlin; Wang, Qingxiao; Li, Ruipeng; Abdelsamie, Maged; Beaujuge, Pierre; Amassian, Aram

2015-01-01

Achieving high performance and reliable organic solar cells hinges on the development of stable and energetically suitable hole transporting buffer layers in tune with the electrode and photoactive materials of the solar cell stack. Here we have identified solution-processed copper(I) iodide (CuI) thin films with low-temperature processing conditions as an effective hole–transporting layer (HTL) for a wide range of polymer:fullerene bulk heterojunction (BHJ) systems. The solar cells using CuI HTL show higher power conversion efficiency (PCE) in standard device structure for polymer blends, up to PCE of 8.8%, as compared with poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL, for a broad range of polymer:fullerene systems. The CuI layer properties and solar cell device behavior are shown to be remarkably robust and insensitive to a wide range of processing conditions of the HTL, including processing solvent, annealing temperature (room temperature up to 200 °C), and film thickness. CuI is also shown to improve the overall lifetime of solar cells in the standard architecture as compared to PEDOT:PSS. We further demonstrate promising solar cell performance when using CuI as top HTL in an inverted device architecture. The observation of uncommon properties, such as photoconductivity of CuI and templating effects on the BHJ layer formation, are also discussed. This study points to CuI as being a good candidate to replace PEDOT:PSS in solution-processed solar cells thanks to the facile implementation and demonstrated robustness of CuI thin films.

Highly efficient organic solar Cells based on a robust room-temperature solution-processed copper iodide hole transporter

KAUST Repository

Zhao, Kui

2015-07-30

Achieving high performance and reliable organic solar cells hinges on the development of stable and energetically suitable hole transporting buffer layers in tune with the electrode and photoactive materials of the solar cell stack. Here we have identified solution-processed copper(I) iodide (CuI) thin films with low-temperature processing conditions as an effective hole–transporting layer (HTL) for a wide range of polymer:fullerene bulk heterojunction (BHJ) systems. The solar cells using CuI HTL show higher power conversion efficiency (PCE) in standard device structure for polymer blends, up to PCE of 8.8%, as compared with poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL, for a broad range of polymer:fullerene systems. The CuI layer properties and solar cell device behavior are shown to be remarkably robust and insensitive to a wide range of processing conditions of the HTL, including processing solvent, annealing temperature (room temperature up to 200 °C), and film thickness. CuI is also shown to improve the overall lifetime of solar cells in the standard architecture as compared to PEDOT:PSS. We further demonstrate promising solar cell performance when using CuI as top HTL in an inverted device architecture. The observation of uncommon properties, such as photoconductivity of CuI and templating effects on the BHJ layer formation, are also discussed. This study points to CuI as being a good candidate to replace PEDOT:PSS in solution-processed solar cells thanks to the facile implementation and demonstrated robustness of CuI thin films.

Charge transport in organic molecular semiconductors from first principles: The bandlike hole mobility in a naphthalene crystal

Science.gov (United States)

Lee, Nien-En; Zhou, Jin-Jian; Agapito, Luis A.; Bernardi, Marco

2018-03-01

Predicting charge transport in organic molecular crystals is notoriously challenging. Carrier mobility calculations in organic semiconductors are dominated by quantum chemistry methods based on charge hopping, which are laborious and only moderately accurate. We compute from first principles the electron-phonon scattering and the phonon-limited hole mobility of naphthalene crystal in the framework of ab initio band theory. Our calculations combine GW electronic bandstructures, ab initio electron-phonon scattering, and the Boltzmann transport equation. The calculated hole mobility is in very good agreement with experiment between 100 -300 K , and we can predict its temperature dependence with high accuracy. We show that scattering between intermolecular phonons and holes regulates the mobility, though intramolecular phonons possess the strongest coupling with holes. We revisit the common belief that only rigid molecular motions affect carrier dynamics in organic molecular crystals. Our paper provides a quantitative and rigorous framework to compute charge transport in organic crystals and is a first step toward reconciling band theory and carrier hopping computational methods.

Inverted bulk-heterojunction organic solar cells with the transfer-printed anodes and low-temperature-processed ultrathin buffer layers

Science.gov (United States)

Itoh, Eiji; Sakai, Shota; Fukuda, Katsutoshi

2018-03-01

We studied the effects of a hole buffer layer [molybdenum oxide (MoO3) and natural copper oxide layer] and a low-temperature-processed electron buffer layer on the performance of inverted bulk-heterojunction organic solar cells in a device consisting of indium-tin oxide (ITO)/poly(ethylene imine) (PEI)/titanium oxide nanosheet (TiO-NS)/poly(3-hexylthiopnehe) (P3HT):phenyl-C61-butyric acid methylester (PCBM)/oxide/anode (Ag or Cu). The insertion of ultrathin TiO-NS (˜1 nm) and oxide hole buffer layers improved the open circuit voltage V OC, fill factor, and rectification properties owing to the effective hole blocking and electron transport properties of ultrathin TiO-NS, and to the enhanced work function difference between TiO-NS and the oxide hole buffer layer. The insertion of the TiO-NS contributed to the reduction in the potential barrier at the ITO/PEI/TiO-NS/active layer interface for electrons, and the insertion of the oxide hole buffer layer contributed to the reduction in the potential barrier for holes. The marked increase in the capacitance under positive biasing in the capacitance-voltage characteristics revealed that the combination of TiO-NS and MoO3 buffer layers contributes to the selective transport of electrons and holes, and blocks counter carriers at the active layer/oxide interface. The natural oxide layer of the copper electrode also acts as a hole buffer layer owing to the increase in the work function of the Cu surface in the inverted cells. The performance of the cell with evaporated MoO3 and Cu layers that were transfer-printed to the active layer was almost comparable to that of the cell with MoO3 and Ag layers directly evaporated onto the active layer. We also demonstrated comparable device performance in the cell with all-printed MoO3 and low-temperature-processed silver nanoparticles as an anode.

Perovskite Solar Cells: Influence of Hole Transporting Materials on Power Conversion Efficiency.

Science.gov (United States)

Ameen, Sadia; Rub, Malik Abdul; Kosa, Samia A; Alamry, Khalid A; Akhtar, M Shaheer; Shin, Hyung-Shik; Seo, Hyung-Kee; Asiri, Abdullah M; Nazeeruddin, Mohammad Khaja

2016-01-08

The recent advances in perovskite solar cells (PSCs) created a tsunami effect in the photovoltaic community. PSCs are newfangled high-performance photovoltaic devices with low cost that are solution processable for large-scale energy production. The power conversion efficiency (PCE) of such devices experienced an unprecedented increase from 3.8 % to a certified value exceeding 20 %, demonstrating exceptional properties of perovskites as solar cell materials. A key advancement in perovskite solar cells, compared with dye-sensitized solar cells, occurred with the replacement of liquid electrolytes with solid-state hole-transporting materials (HTMs) such as 2,2',7,7'-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9'-spirobifluorene (Spiro-OMeTAD), which contributed to enhanced PCE values and improved the cell stability. Following improvements in the perovskite crystallinity to produce a smooth, uniform morphology, the selective and efficient extraction of positive and negative charges in the device dictated the PCE of PSCs. In this Review, we focus mainly on the HTMs responsible for hole transport and extraction in PSCs, which is one of the essential components for efficient devices. Here, we describe the current state-of-the-art in molecular engineering of hole-transporting materials that are used in PSCs and highlight the requisites for market-viability of this technology. Finally, we include an outlook on molecular engineering of new functional HTMs for high efficiency PSCs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modelling of impurity transport in ergodic layer of LHD

International Nuclear Information System (INIS)

Feng, Y.; Masuzaki, S.; Morisaki, T.; Ohyabu, N.; Yamada, H.; Komori, A.; Motojima, O.; Kobayashi, M.

2008-01-01

The impurity transport properties in the ergodic layer of LHD are analyzed by the 3D edge transport code as well as 1D simple model, which is used to illustrate the essential transport terms in the analysis. It is found that as the plasma density increases the edge surface layers, very edge region of the ergodic layer, enters friction dominant regime, resulting in impurity retention. It is considered that the cause for the retention is both temperature drop and the flow acceleration in the edge surface layers. The edge surface layers can provide effective retention of impurities coming from divertor as well as the first wall, because of the geometrical advantage of the edge region of LHD. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells

KAUST Repository

Peng, Wei; Wang, Lingfei; Banavoth, Murali; Ho, Kang-Ting; Bera, Ashok; Cho, Nam Chul; Kang, Chen-Fang; Burlakov, Victor M.; Pan, Jun; Sinatra, Lutfan; Ma, Chun; Xu, Wei; Shi, Dong; Alarousu, Erkki; Goriely, Alain; He, Jr-Hau; Mohammed, Omar F.; Wu, Tao; Bakr, Osman

2016-01-01

conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3NH3PbBr3 solar cells to date.

Hole-Transporting Materials for Printable Perovskite Solar Cells

Directory of Open Access Journals (Sweden)

Paola Vivo

2017-09-01

Full Text Available Perovskite solar cells (PSCs represent undoubtedly the most significant breakthrough in photovoltaic technology since the 1970s, with an increase in their power conversion efficiency from less than 5% to over 22% in just a few years. Hole-transporting materials (HTMs are an essential building block of PSC architectures. Currently, 2,2’,7,7’-tetrakis-(N,N’-di-p-methoxyphenylamine-9,9’-spirobifluorene, better known as spiro-OMeTAD, is the most widely-used HTM to obtain high-efficiency devices. However, it is a tremendously expensive material with mediocre hole carrier mobility. To ensure wide-scale application of PSC-based technologies, alternative HTMs are being proposed. Solution-processable HTMs are crucial to develop inexpensive, high-throughput and printable large-area PSCs. In this review, we present the most recent advances in the design and development of different types of HTMs, with a particular focus on mesoscopic PSCs. Finally, we outline possible future research directions for further optimization of the HTMs to achieve low-cost, stable and large-area PSCs.

Hole-Transporting Materials for Printable Perovskite Solar Cells

Science.gov (United States)

Salunke, Jagadish K.; Priimagi, Arri

2017-01-01

Perovskite solar cells (PSCs) represent undoubtedly the most significant breakthrough in photovoltaic technology since the 1970s, with an increase in their power conversion efficiency from less than 5% to over 22% in just a few years. Hole-transporting materials (HTMs) are an essential building block of PSC architectures. Currently, 2,2’,7,7’-tetrakis-(N,N’-di-p-methoxyphenylamine)-9,9’-spirobifluorene), better known as spiro-OMeTAD, is the most widely-used HTM to obtain high-efficiency devices. However, it is a tremendously expensive material with mediocre hole carrier mobility. To ensure wide-scale application of PSC-based technologies, alternative HTMs are being proposed. Solution-processable HTMs are crucial to develop inexpensive, high-throughput and printable large-area PSCs. In this review, we present the most recent advances in the design and development of different types of HTMs, with a particular focus on mesoscopic PSCs. Finally, we outline possible future research directions for further optimization of the HTMs to achieve low-cost, stable and large-area PSCs. PMID:28914823

Graded Heterojunction Engineering for Hole-Conductor-Free Perovskite Solar Cells with High Hole Extraction Efficiency and Conductivity.

Science.gov (United States)

Li, Bo; Zhang, Yanan; Zhang, Luyuan; Yin, Longwei

2017-10-01

Despite great progress in the photovoltaic conversion efficiency (PCE) of inorganic-organic hybrid perovskite solar cells (PSCs), the large-scale application of PSCs still faces serious challenges due to the poor-stability and high-cost of the spiro-OMeTAD hole transport layer (HTL). It is of great fundamental importance to rationally address the issues of hole extraction and transfer arising from HTL-free PSCs. Herein, a brand-new PSC architecture is designed by introducing multigraded-heterojunction (GHJ) inorganic perovskite CsPbBr x I 3- x layers as an efficient HTL. The grade adjustment can be achieved by precisely tuning the halide proportion and distribution in the CsPbBr x I 3- x film to reach an optimal energy alignment of the valance and conduction band between MAPbI 3 and CsPbBr x I 3- x . The CsPbBr x I 3- x GHJ as an efficient HTL can induce an electric field where a valance/conduction band edge is leveraged to bend at the heterojunction interface, boosting the interfacial electron-hole splitting and photoelectron extraction. The GHJ architecture enhances the hole extraction and conduction efficiency from the MAPbI 3 to the counter electrode, decreases the recombination loss during the hole transfer, and benefits in increasing the open-circuit voltage. The optimized HTL-free PCS based on the GHJ architecture demonstrates an outstanding thermal stability and a significantly improved PCE of 11.33%, nearly 40% increase compared with 8.16% for pure HTL-free devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

KAUST Repository

Janjua, Bilal; Ng, Tien Khee; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2014-01-01

A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

KAUST Repository

Janjua, Bilal

2014-02-27

A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

Science.gov (United States)

Cheng, Chuan-Hui; Zhang, Bi-Long; Sun, Chao; Li, Ruo-Xuan; Wang, Yuan; Tian, Wen-Ming; Zhao, Chun-Yi; Jin, Sheng-Ye; Liu, Wei-Feng; Luo, Ying-Min; Du, Guo-Tong; Cong, Shu-Lin

2017-06-01

A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.

Numerical analysis of drilling hole work-hardening effects in hole-drilling residual stress measurement

Science.gov (United States)

Li, H.; Liu, Y. H.

2008-11-01

The hole-drilling strain gage method is an effective semi-destructive technique for determining residual stresses in the component. As a mechanical technique, a work-hardening layer will be formed on the surface of the hole after drilling, and affect the strain relaxation. By increasing Young's modulus of the material near the hole, the work-hardening layer is simplified as a heterogeneous annulus. As an example, two finite rectangular plates submitted to different initial stresses are treated, and the relieved strains are measured by finite element simulation. The accuracy of the measurement is estimated by comparing the simulated residual stresses with the given initial ones. The results are shown for various hardness of work-hardening layer. The influence of the relative position of the gages compared with the thickness of the work-hardening layer, and the effect of the ratio of hole diameter to work-hardening layer thickness are analyzed as well.

Effect of arylamine hole-transport units on the performance of blue polyspirobifulorene light-emitting diodes

NARCIS (Netherlands)

Abbaszadeh, D.; Nicolai, H.T.; Crəciun, N.I.; Blom, P.W.M.

2014-01-01

The operation of blue light-emitting diodes based on polyspirobifluorene with a varying number of N,N,N′,N′ tetraaryldiamino biphenyl (TAD) hole-transport units (HTUs) is investigated. Assuming that the electron transport is not affected by the incorporation of TAD units, model calculations predict

Time-of-flight Measurement Of Hole-tunneling Properties And Emission Color Control In Organic Light-emitting Diodes

Science.gov (United States)

Kurata, K.; Kashiwabara, K.; Nakajima, K.; Mizoguchi, Y.; Ohtani, N.

2011-12-01

Hole transport properties of organic light-emitting diodes (OLEDs) with a thin hole-blocking layer (HBL) were evaluated by time-of-flight measurement. Electroluminescence (EL) spectra of OLEDs with various HBL thicknesses were also evaluated. The results clearly show that the time-resolved photocurrent response and the emission color strongly depend on HBL thickness. This can be attributed to hole-tunneling through the thin HBL. We successfully fabricated a white OLED by controlling the thickness of HBL.

Tuning the Transport Properties of Layered Materials for Thermoelectric Applications using First-Principles Calculations

KAUST Repository

Saeed, Yasir

2014-05-11

Thermoelectric materials can convert waste heat into electric power and thus provide a way to reduce the dependence on fossil fuels. Our aim is to model the underlying materials properties and, in particular, the transport as controlled by electrons and lattice vibrations. The goal is to develop an understanding of the thermoelectric properties of selected materials at a fundamental level. The structural, electronic, optical, and phononic properties are studied in order to tune the transport, focusing on KxRhO2, NaxRhO2, PtSb2 and Bi2Se3. The investigations are based on density functional theory as implemented in the all electron linearized augmented plane wave plus local orbitals WIEN2k and pseudo potential Quantum-ESPRESSO codes. The thermoelectric properties are derived from Boltzmann transport theory under the constant relaxation time approximation, using the BoltzTraP code. We will discuss first the changes in the electronic band structure under variation of the cation concentration in layered KxRhO2 in the 2H phase and NaxRhO2 in the 3R phase. We will also study the hydrated phase. The deformations of the RhO6 octahedra turn out to govern the thermoelectric properties, where the high Seebeck coefficient results from ”pudding mold" bands. We investigate the thermoelectric properties of electron and hole doped PtSb2, which is not a layered material but shares “pudding mold" bands. PtSb2 has a high Seebeck coefficient at room temperature, which increases significantly under As alloying by bandgap opening and reduction of the lattice thermal conductivity. Bi2Se3 (bulk and thin film) has a larger bandgap then the well-known thermoelectric material Bi2Te3, which is important at high temperature. The structural stability, electronic structure, and transport properties of one to six quintuple layers of Bi2Se3 will be discussed. We also address the effect of strain on a single quintuple layer by phonon band structures. We will analyze the electronic and transport

Fabrication and characterization of organic light-emitting diodes using zinc complexes as hole-blocking layer.

Science.gov (United States)

Kim, Won Sam; You, Jung Min; Lee, Burm-Jong; Jang, Yoon-Ki; Kim, Dong-Eun; Kwon, Young-Soo

2006-11-01

2-(2-Hydroxyphenyl)benzoxazole (HPB) was employed as organic ligand and the corresponding zinc complexes (Zn(HPB)2 and Zn(HPB)q) were synthesized. And their EL properties were characterized. The structures of zinc complexes were determined with FT-NMR, FT-IR, UV-Vis, and XPS. The thermal stability showed up to about 300 degrees C under nitrogen flow, which was measured by TGA. The photoluminescence (PL) of zinc complexes were measured from the DMF solution. The PL emitted in blue and yellow region, respectively. The EL devices were fabricated by the vacuum deposition. Two kinds of OLEDs devices were fabricated; ITO/NPB (40 nm)/Zn complexes (60 nm)/LiF/Al and ITO/NPB (40 nm)/Alq3 (60 nm)/Zn complexes (5 nm)/LiF/Al. Both of the EL properties as the emitting and the hole-blocking layer were investigated. The EL emission of Zn(HPB)q exhibited green light centered at 532 nm. The device showed a turn-on voltage at 5 V and a luminance of 6073 cd/m2 at 10 V. Meanwhile, the maximum EL the emission of the Zn(HPB)2 device was found to be at 447 nm. And the device showed a luminance of 2813 cd/m2 at 10 V. The ITO/NPB (40 nm)/Alq3 (60 nm)/Zn(HPB)2 (5 nm)/LiF/Al device showed increased luminance of L=17000 cd/m2 compared to L=12000 cd/m2 for similar device fabricated without the hole-blocking layer. And the turn-on voltage was significantly affected by the existence of the hole-blocking layer.

Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

KAUST Repository

Essig, Stephanie

2018-02-21

Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient hole-selective front contact stack for crystalline silicon solar cells. However, hole extraction from the Si wafer and transport through this stack degrades upon annealing at 190 °C, which is needed to cure the screen-printed Ag metallization applied to typical Si solar cells. Here, we show that effusion of hydrogen from the adjacent layers is a likely cause for this degradation, highlighting the need for hydrogen-lean passivation layers when using such metal-oxide-based carrier-selective contacts. Pre-MoOX-deposition annealing of the passivating a-Si:H layer is shown to be a straightforward approach to manufacturing MoOX-based devices with high fill factors using screen-printed metallization cured at 190 °C.

White OLED using β-diketones rare earth binuclear complex as emitting layer

International Nuclear Information System (INIS)

Quirino, W.G.; Legnani, C.; Cremona, M.; Lima, P.P.; Junior, S.A.; Malta, O.L.

2006-01-01

In this work, the fabrication and the characterization of a white triple-layer OLED using a β-diketones binuclear complex [Eu(btfa) 3 phenterpyTb(acac) 3 ] as the emitting layer is reported. The devices were assembled using a heterojunction between three organic molecular materials: the N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB) as hole-transporting layer, the β-diketones binuclear complex and the tris(8-hydroxyquinoline aluminum) (Alq 3 ) as the electron transporting layer. All the organic layers were sequentially deposited under high vacuum environment by thermal evaporation onto ITO substrates and without breaking vacuum. Continuous electroluminescence emission was obtained varying the applied bias voltage from 10 to 22 V showing a wide emission band from 400 to 700 nm with about 100 cd/m 2 of luminance. The white emission results from a combined action between the binuclear complex, acting as hole blocking and emitting layer, blue from NPB and the typical Alq 3 green emission. The intensity ratio of the peaks is determined by the layer thickness and by the bias voltage applied to the OLED, allowing us to obtain a color tunable light source

Direct Observation of Ultrafast Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy.

Science.gov (United States)

Ishioka, Kunie; Barker, Bobby G; Yanagida, Masatoshi; Shirai, Yasuhiro; Miyano, Kenjiro

2017-08-17

Efficient charge separation at the interfaces of the perovskite with the carrier transport layers is crucial for perovskite solar cells to achieve high power conversion efficiency. We present a systematic experimental study on the hole injection dynamics from MAPbI 3 perovskite to three typical hole transport materials (HTMs). We extract the carrier dynamics directly related to the hole injection by employing a pump light with short absorption depth and comparing the transient transmission signals excited on the two sides of the sample. The differential transmission signals reveal the hole injections to PTAA and PEDOT:PSS to be complete within 1 and 2 ps, respectively, and that to NiO x to exhibit an additional slow process on a 40 ps time scale. The obtained injection dynamics are discussed in comparison with the device performance of the solar cells containing the same MAPbI 3 /HTM interfaces.

Evolution of magnetohydrodynamic waves in low layers of a coronal hole

International Nuclear Information System (INIS)

Pucci, Francesco; Malara, Francesco; Onofri, Marco

2014-01-01

Although a coronal hole is permeated by a magnetic field with a dominant polarity, magnetograms reveal a more complex magnetic structure in the lowest layers, where several regions of opposite polarity of typical size of the order of 10 4 km are present. This can give rise to magnetic separatrices and neutral lines. MHD fluctuations generated at the base of the coronal hole by motions of the inner layer of the solar atmosphere may interact with such inhomogeneities, leading to the formation of small scales. This phenomenon is studied on a 2D model of a magnetic structure with an X-point, using 2D MHD numerical simulations. This model implements a method of characteristics for boundary conditions in the direction outer-pointing to Sun surface to simulate both wave injection and exit without reflection. Both Alfvénic and magnetosonic perturbations are considered, and they show very different phenomenology. In the former case, an anisotropic power-law spectrum forms with a dominance of perpendicular wavevectors at altitudes ∼10 4 km. Density fluctuations are generated near the X-point by Alfvén wave magnetic pressure and propagate along open fieldlines at a speed comparable to the local Alfvén velocity. An analysis of energy dissipation and heating caused by the formation of small scales for the Alfvénic case is presented. In the magnetosonic case, small scales form only around the X-point, where a phenomenon of oscillating magnetic reconnection is observed to be induced by the periodic deformation of the magnetic structure due to incoming waves.

Fused Methoxynaphthyl Phenanthrimidazole Semiconductors as Functional Layer in High Efficient OLEDs.

Science.gov (United States)

Jayabharathi, Jayaraman; Ramanathan, Periyasamy; Karunakaran, Chockalingam; Thanikachalam, Venugopal

2016-01-01

Efficient hole transport materials based on novel fused methoxynaphthyl phenanthrimidazole core structure were synthesised and characterized. Their device performances in phosphorescent organic light emitting diodes were investigated. The high thermal stability in combination with the reversible oxidation process made promising candidates as hole-transporting materials for organic light-emitting devices. Highly efficient Alq3-based organic light emitting devices have been developed using phenanthrimidazoles as functional layers between NPB [4,4-bis(N-(1-naphthyl)-N-phenylamino)biphenyl] and Alq3 [tris(8-hydroxyquinoline)aluminium] layers. Using the device of ITO/NPB/4/Alq3/LiF/Al, a maximum luminous efficiency of 5.99 cd A(-1) was obtained with a maximum brightness of 40,623 cd m(-2) and a power efficiency of 5.25 lm W(-1).

Efficient Naphthalenediimide-Based Hole Semiconducting Polymer with Vinylene Linkers between Donor and Acceptor Units

KAUST Repository

Zhang, Lei

2016-11-04

We demonstrate a new method to reverse the polarity and charge transport behavior of naphthalenediimide (NDI)-based copolymers by inserting a vinylene linker between the donor and acceptor units. The vinylene linkers minimize the intrinsic steric congestion between the NDI and thiophene moieties to prompt backbone planarity. The polymers with vinylene linkers exhibit electron n-channel transport characteristics under vacuum, similar to the benchmark polymer, P(NDI2OD-T2). To our surprise, when the polymers are measured in air, the dominant carrier type switches from n- to p-type and yield hole mobilities up to 0.45 cm(2) s(-1) with hole to electron mobility ratio of three (mu(h)/mu(e), similar to 3), which indicates that the hole density in the active layer can be significantly increased by exposure to air. This increase is consistent with the intrinsic more delocalized nature of the highest occupied molecular orbital of the charged vinylene polymer, as estimated by density functional theory (DFT) calculations, which facilitates hole transport within the polymer chains. This is the first demonstration of an efficient NDI-based hole semiconducting polymer, which will enable new developments in all-polymer solar cells, complementary circuits, and dopable polymers for use in thermoelectrics.

Efficient Naphthalenediimide-Based Hole Semiconducting Polymer with Vinylene Linkers between Donor and Acceptor Units

KAUST Repository

Zhang, Lei; Rose, Bradley Daniel; Liu, Yao; Nahid, Masrur M.; Gann, Eliot; Ly, Jack; Zhao, Wei; Rosa, Stephen J.; Russell, Thomas P.; Facchetti, Antonio; McNei, Christopher R.; Bredas, Jean-Luc; Briseno, Alejandro L.

2016-01-01

We demonstrate a new method to reverse the polarity and charge transport behavior of naphthalenediimide (NDI)-based copolymers by inserting a vinylene linker between the donor and acceptor units. The vinylene linkers minimize the intrinsic steric congestion between the NDI and thiophene moieties to prompt backbone planarity. The polymers with vinylene linkers exhibit electron n-channel transport characteristics under vacuum, similar to the benchmark polymer, P(NDI2OD-T2). To our surprise, when the polymers are measured in air, the dominant carrier type switches from n- to p-type and yield hole mobilities up to 0.45 cm(2) s(-1) with hole to electron mobility ratio of three (mu(h)/mu(e), similar to 3), which indicates that the hole density in the active layer can be significantly increased by exposure to air. This increase is consistent with the intrinsic more delocalized nature of the highest occupied molecular orbital of the charged vinylene polymer, as estimated by density functional theory (DFT) calculations, which facilitates hole transport within the polymer chains. This is the first demonstration of an efficient NDI-based hole semiconducting polymer, which will enable new developments in all-polymer solar cells, complementary circuits, and dopable polymers for use in thermoelectrics.

Design, synthesis, thin film deposition and characterization of new indium tin oxide anode functionalization/hole transport organic materials and their application to high performance organic light-emitting diodes

Science.gov (United States)

Huang, Qinglan

The primary goals of this dissertation were to understand the physical and chemical aspects of organic light-emitting diode (OLED) fundamentals, develop new materials as well as device structures, and enhance OLED electroluminescent (EL) response. Accordingly, this dissertation analyzes the relative effects of indium tin oxide (ITO) anode-hole transporting layer (HTL) contact vs. the intrinsic HTL material properties on OLED EL response. Two siloxane-based HTL materials, 4,4'-bis[(4″ -trichlorosilylpropyl-1″-naphthylphenylamino)biphenyl (NPB-Si2) and 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPD-Si2) have thereby been designed, synthesized and covalently bound to ITO surface. They afford a 250% increase in luminance and ˜50% reduction in turn-on voltage vs. comparable 4,4'-bis(1-naphthylphenylamino)biphenyl (NPB) HTL-based devices. These results suggest new strategies for developing OLED HTL structures, with focus on the anode-HTL contact. Furthermore, archetypical OLED device structures have been refined by simultaneously incorporating the TPD-Si2 layer and a hole- and exciton-blocking/electron transport layer (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) in tris(8-hydroxyquinolato)aluminum(III) and tetrakis(2-methyl-8-hydroxyquinolinato)borate-based OLEDs. The refined device structures lead to high performance OLEDs such as green-emitting OLEDs with maximum luminance (Lmax) ˜ 85,000 cd/m2, power and forward external quantum efficiencies (eta p and etaext) as high as 15.2 lm/W and 4.4 +/- 0.5%, respectively, and blue-emitting OLEDs with Lmax 30,000 cd/m 2, and ˜5.0 lm/W and 1.6 +/- 0.2% etap and eta ext, respectively. The high performance is attributed to synergistically enhanced hole/electron injection and recombination efficiency. In addition, molecule-scale structure effects at ITO anode-HTL interfaces have been systematically probed via a self-assembly approach. A series of silyltriarylamine precursors differing in aryl group and

Three-dimensional hole transport in nickel oxide by alloying with MgO or ZnO

Science.gov (United States)

Alidoust, Nima; Carter, Emily A.

2015-11-01

It has been shown previously that the movement of a hole in nickel oxide is confined to two dimensions, along a single ferromagnetic plane. Such confinement may hamper hole transport when NiO is used as a p-type transparent conductor in various solar energy conversion technologies. Here, we use the small polaron model, along with unrestricted Hartree-Fock and complete active space self-consistent field calculations to show that forming substitutional MxNi1-xO alloys with M = Mg or Zn reduces the barrier for movement of a hole away from the ferromagnetic plane to which it is confined. Such reduction occurs for hole transfer alongside one or two M ions that have been substituted for Ni ions. Furthermore, the Mg and Zn ions do not trap holes on O sites in their vicinity, and NiO's transparency is preserved upon forming the alloys. Thus, forming MxNi1-xO alloys with M = Mg or Zn may enhance NiO's potential as a p-type transparent conducting oxide, by disrupting the two-dimensional confinement of holes in pure NiO.

One-Step Facile Synthesis of a Simple Hole Transport Material for Efficient Perovskite Solar Cells

KAUST Repository

Chen, Hu

2016-04-04

A hole transporting material was designed for use in perovskite solar cells, with a facile one-step synthesis from inexpensive, com-mercially available reagents. The molecule comprises a central fluorinated phenyl core with pendant aryl amines, namely, 3,6-difluoro-N1,N1,N2,N2,N4,N4,N5,N5-octakis(4-methoxyphenyl)benzene-1,2,4,5-tetraamine (DFTAB). A power conversion efficiency of up to 10.4% was achieved in a mesoporous perovskite device architecture. The merits of a simple and potentially low cost syn-thetic route as well as promising performance in perovskite devices, encourages further development of this materials class as new low-cost hole transporting materials for the scale up of perovskite solar cells.

One-Step Facile Synthesis of a Simple Hole Transport Material for Efficient Perovskite Solar Cells

KAUST Repository

Chen, Hu; Bryant, Daniel; Troughton, Joel; Kirkus, Mindaugas; Neophytou, Marios; Miao, Xiaohe; Durrant, James R.; McCulloch, Iain

2016-01-01

A hole transporting material was designed for use in perovskite solar cells, with a facile one-step synthesis from inexpensive, com-mercially available reagents. The molecule comprises a central fluorinated phenyl core with pendant aryl amines, namely, 3,6-difluoro-N1,N1,N2,N2,N4,N4,N5,N5-octakis(4-methoxyphenyl)benzene-1,2,4,5-tetraamine (DFTAB). A power conversion efficiency of up to 10.4% was achieved in a mesoporous perovskite device architecture. The merits of a simple and potentially low cost syn-thetic route as well as promising performance in perovskite devices, encourages further development of this materials class as new low-cost hole transporting materials for the scale up of perovskite solar cells.

Enhancing Color Purity and Stable Efficiency of White Organic Light Diodes by Using Hole-Blocking Layer

Directory of Open Access Journals (Sweden)

Chien-Jung Huang

2014-01-01

Full Text Available The organic light-emitting diodes with triple hole-blocking layer (THBL formation sandwich structure which generate white emission were fabricated. The 5,6,11,12-tetraphenylnapthacene (Rubrene, (4,4′-N,N′-dicarbazolebiphenyl (CBP, and 4,4′-bis(2,2′diphenylvinil-1,1′-biphenyl (DPVBi were used as emitting materials in the device. The function of CBP layer is not only an emitting layer but also a hole-blocking layer (HBL, and the Rubrene was doped into the CBP. The optimal configuration structure was indium tin oxide (ITO/Molybdenum trioxide (MoO3 (5 nm/[4,4-bis[N-(1-naphthyl-N-phenylamino]biphenyl (NPB (35 nm/CBP (HBL1 (5 nm/DPVBi (I (10 nm/CBP (HBL2 : Rubrene (4 : 1 (3 nm/DPVBi (II (30 nm/CBP (HBL3 (2 nm/4,7-diphenyl-1,10-phenanthroline (BPhen (10 nm/Lithium fluoride (LiF/aluminum (Al. The result showed that the device with Rubrene doped in CBP (HBL2 exhibited a stable white emission with the color coordinates of (0.322, 0.368, and the coordinate with the slight shift of ±Δx,y = (0.001, 0.011 for applied voltage of 8–12 V was observed.

Pyrene-Based Blue AIEgen: Enhanced Hole Mobility and Good EL Performance in Solution-Processed OLEDs

Directory of Open Access Journals (Sweden)

Jie Yang

2017-12-01

Full Text Available Organic luminogens with strong solid-state emission have attracted much attention for their widely practical applications. However, the traditional organic luminogens with planar conformations often suffer from the notorious aggregation-caused quenching (ACQ effect in solid state for the π–π stacking. Here, a highly efficient blue emitter TPE-4Py with an aggregation-induced emission (AIE effect is achieved by combining twisted tetraphenylethene (TPE core and planar pyrene peripheries. When the emitter was spin-coated in non-doped OLEDs with or without a hole-transporting layer, comparable EL performance was achieved, showing the bifunctional property as both an emitter and a hole-transporting layer. Furthermore, its EL efficiency was promoted in doped OLED, even at a high doping concentration (50%, because of its novel AIE effect, with a current efficiency up to 4.9 cd/A at 484 nm.

Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

International Nuclear Information System (INIS)

Sielski, Jan; Jeszka, Jeremiasz K.

2012-01-01

The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge-carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time-of-flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 x 10 5 V cm -1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of ''high-energy'' charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Inverted polymer solar cells with Nafion® as the hole extraction layer: efficiency and lifetime studies

Science.gov (United States)

Manceau, Matthieu; Berson, Solenn

2014-01-01

The use of Nafion® as the hole extraction layer in polymer solar cells is demonstrated in this work. Inverted devices were built on plastic foil with the following architecture: PET/ITO/ZnO/P3HT:PCBM/Nafion®/Ag. The Nafion® was processed from a surfactant-free solution in alcoholic solvents on top of the active layer. Optimization of film thickness and annealing yielded fully functional devices with power conversion efficiency similar to others referenced, along with good operational stability.

On the hole accelerator for III-nitride light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Zhang, Yonghui; Bi, Wengang; Geng, Chong; Xu, Shu; Demir, Hilmi Volkan; Sun, Xiao Wei

2016-01-01

In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-Al x Ga 1−x N heterojunction) with different designs, including the AlN composition in the p-Al x Ga 1−x N layer, and the thickness for the p-GaN layer and the p-Al x Ga 1−x N layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-Al x Ga 1−x N layer increases. Meanwhile, with p-GaN layer or p-Al x Ga 1−x N layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-Al x Ga 1−x N design, and the hole accelerator can effectively increase the hole injection if properly designed.

Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution-Processed Al-Doped ZnO Electron Transporting Layer

KAUST Repository

Jagadamma, Lethy Krishnan

2015-04-22

A facile and low-temperature (125 °C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates is described. The ammonia-treatment of the aqueous AZO nanoparticle solution produces compact, crystalline, and smooth thin films, which retain the aluminum doping, and eliminates/reduces the native defects by nitrogen incorporation, making them good electron transporters and energetically matched with the fullerene acceptor. It is demonstrated that highly efficient solar cells can be achieved without the need for additional surface chemical modifications of the buffer layer, which is a common requirement for many metal oxide buffer layers to yield efficient solar cells. Also highly efficient solar cells are achieved with thick AZO films (>50 nm), highlighting the suitability of this material for roll-to-roll coating. Preliminary results on the applicability of AZO as electron injection layer in F8BT-based polymer light emitting diode are also presented. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hole injection enhancement in organic light emitting devices using plasma treated graphene oxide

Energy Technology Data Exchange (ETDEWEB)

Jesuraj, P. Justin; Parameshwari, R. [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli, 620 024, Tamil Nadu (India); Kanthasamy, K.; Koch, J. [Institut für Festkörperphysik, ATMOS, Appelstr. 2, D-30167, Hannover (Germany); Pfnür, H. [Institut für Festkörperphysik, ATMOS, Appelstr. 2, D-30167, Hannover (Germany); Laboratorium für Nano- und Quantene$ngineering, Schneiderberg 30, D-30167, Hannover (Germany); Jeganathan, K., E-mail: kjeganathan@yahoo.com [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli, 620 024, Tamil Nadu (India)

2017-03-01

Graphical abstract: Plasma treated Graphene oxide for hole injection enhancement in OLEDs. - Highlights: • Oxygen (O{sub 2}) and hydrogen (H{sub 2}) plasma exposed graphene oxide (GO) sheets have been demonstrated as hole buffer layers in OLEDs. • O{sub 2} plasma exposure induces assimilation of oxygen contents in GO lattice resulting in improved work function that reduced the hole injection barrier further. Whereas, H{sub 2} plasma contrastingly reduced the GO by excluding oxygen which ensuing lower work function. • X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigations reveal the capricious amount of oxygen in GO lattice and its corresponding work function variations. • GO and O{sub 2} plasma treated GO significantly improves the current efficiency of OLEDs more than one order with notable reduction in turn on voltage. - Abstract: The hole injection layer (HIL) with high work function (WF) is desirable to reduce the injection barrier between anode and hole transport layer in organic light emitting devices (OLED). Here, we report a novel approach to tune the WF of graphene oxide (GO) using oxygen and hydrogen plasma treatment and its hole injection properties in OLEDs. The mild exposure of oxygen plasma on GO (O{sub 2}-GO) significantly reduces the injection barrier by increasing the WF of anode (4.98 eV) through expansion of C−O bonds. In contrast, the hole injection barrier was drastically increased for hydrogen plasma treated GO (H{sub 2}-GO) layers as the WF is lowered by the contraction of C−O bond. By employing active O{sub 2}-GO as HIL in OLEDs found to exhibit superior current efficiency of 4.2 cd/A as compared to 3.3 cd/A for pristine GO. Further, the high injection efficiency of O{sub 2}-GO infused hole only device can be attributed to the improved energy level matching. Ultraviolet and X-ray photoelectron spectroscopy were used to correlate the WF of HIL infused anode towards the enhanced performance of

White OLED using {beta}-diketones rare earth binuclear complex as emitting layer

Energy Technology Data Exchange (ETDEWEB)

Quirino, W.G. [LOEM, Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, PUC-Rio, P.O.Box 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Legnani, C. [LOEM, Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, PUC-Rio, P.O.Box 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Cremona, M. [LOEM, Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, PUC-Rio, P.O.Box 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil)]. E-mail: cremona@fis.puc-rio.br; Lima, P.P. [Departamento de Quimica Fundamental, Universidade Federal de Pernambuco, UFPE-CCEN, Recife, PE, 50670-901 (Brazil); Junior, S.A. [Departamento de Quimica Fundamental, Universidade Federal de Pernambuco, UFPE-CCEN, Recife, PE, 50670-901 (Brazil); Malta, O.L. [Departamento de Quimica Fundamental, Universidade Federal de Pernambuco, UFPE-CCEN, Recife, PE, 50670-901 (Brazil)

2006-01-03

In this work, the fabrication and the characterization of a white triple-layer OLED using a {beta}-diketones binuclear complex [Eu(btfa){sub 3}phenterpyTb(acac){sub 3}] as the emitting layer is reported. The devices were assembled using a heterojunction between three organic molecular materials: the N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB) as hole-transporting layer, the {beta}-diketones binuclear complex and the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) as the electron transporting layer. All the organic layers were sequentially deposited under high vacuum environment by thermal evaporation onto ITO substrates and without breaking vacuum. Continuous electroluminescence emission was obtained varying the applied bias voltage from 10 to 22 V showing a wide emission band from 400 to 700 nm with about 100 cd/m{sup 2} of luminance. The white emission results from a combined action between the binuclear complex, acting as hole blocking and emitting layer, blue from NPB and the typical Alq{sub 3} green emission. The intensity ratio of the peaks is determined by the layer thickness and by the bias voltage applied to the OLED, allowing us to obtain a color tunable light source.

Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared

Directory of Open Access Journals (Sweden)

Xiong Gong

2010-07-01

Full Text Available Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.

Ballistic hole magnetic microscopy

NARCIS (Netherlands)

Haq, E.; Banerjee, T.; Siekman, M.H.; Lodder, J.C.; Jansen, R.

2005-01-01

A technique to study nanoscale spin transport of holes is presented: ballistic hole magnetic microscopy. The tip of a scanning tunneling microscope is used to inject hot electrons into a ferromagnetic heterostructure, where inelastic decay creates a distribution of electron-hole pairs.

Phosphorene: an unexplored 2D semiconductor with a high hole mobility.

Science.gov (United States)

Liu, Han; Neal, Adam T; Zhu, Zhen; Luo, Zhe; Xu, Xianfan; Tománek, David; Ye, Peide D

2014-04-22

We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31-0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm(2)/V·s, and an on/off ratio of up to 10(4). We demonstrate the possibility of phosphorene integration by constructing a 2D CMOS inverter consisting of phosphorene PMOS and MoS2 NMOS transistors.

A hole modulator for InGaN/GaN light-emitting diodes

Science.gov (United States)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Direct C-H Arylation Meets Perovskite Solar Cells: Sn-Free Synthesis Shortcut to High Performance Hole-Transporting Materials.

Science.gov (United States)

Chang, Yu-Chieh; Lee, Kun-Mu; Lai, Chia-Hsin; Liu, Ching-Yuan

2018-03-30

In contrast to the traditional multistep synthesis, we demonstrate herein a two-step synthesis-shortcut to triphenylamine-based hole-transporting materials (HTMs) through sequential direct C-H arylations. These hole-transporting molecules are fabricated in perovskite-based solar cells (PSCs), exhibiting promising efficiencies up to 17.69%, which is comparable to PSCs utilizing the commercially available spiro-OMeTAD as HTM. This is the first report describing the use of step-saving C-H activations/arylations in the facile synthesis of small-molecule HTMs for perovskite solar cells. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light illumination intensity dependence of photovoltaic parameter in polymer solar cells with ammonium heptamolybdate as hole extraction layer.

Science.gov (United States)

Liu, Zhiyong; Niu, Shengli; Wang, Ning

2018-01-01

A low-temperature, solution-processed molybdenum oxide (MoO X ) layer and a facile method for polymer solar cells (PSCs) is developed. The PSCs based on a MoO X layer as the hole extraction layer (HEL) is a significant advance for achieving higher photovoltaic performance, especially under weaker light illumination intensity. Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) measurements show that the (NH 4 ) 6 Mo 7 O 24 molecule decomposes and forms the molybdenum oxide (MoO X ) molecule when undergoing thermal annealing treatment. In this study, PSCs with the MoO X layer as the HEL exhibited better photovoltaic performance, especially under weak light illumination intensity (from 100 to 10mWcm -2 ) compared to poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)-based PSCs. Analysis of the current density-voltage (J-V) characteristics at various light intensities provides information on the different recombination mechanisms in the PSCs with a MoO X and PEDOT:PSS layer as the HEL. That the slopes of the open-circuit voltage (V OC ) versus light illumination intensity plots are close to 1 unity (kT/q) reveals that bimolecular recombination is the dominant and weaker monomolecular recombination mechanism in open-circuit conditions. That the slopes of the short-circuit current density (J SC ) versus light illumination intensity plots are close to 1 reveals that the effective charge carrier transport and collection mechanism of the MoO X /indium tin oxide (ITO) anode is the weaker bimolecular recombination in short-circuit conditions. Our results indicate that MoO X is an alternative candidate for high-performance PSCs, especially under weak light illumination intensity. Copyright © 2017 Elsevier Inc. All rights reserved.

Ultrathin Cu2O as an efficient inorganic hole transporting material for perovskite solar cells

KAUST Repository

Yu, Weili; Li, Feng; Wang, Hong; Alarousu, Erkki; Chen, Yin; Lin, Bin; Wang, Lingfei; Hedhili, Mohamed N.; Li, Yangyang; Wu, Kewei; Wang, Xianbin; Mohammed, Omar F.; Wu, Tao

2016-01-01

We demonstrate that ultrathin P-type Cu2O thin films fabricated by a facile thermal oxidation method can serve as a promising hole-transporting material in perovskite solar cells. Following a two-step method, inorganic-organic hybrid perovskite

Deposition of hole-transport materials in solid-state dye-sensitized solar cells by doctor-blading

KAUST Repository

Ding, I-Kang; Melas-Kyriazi, John; Cevey-Ha, Ngoc-Le; Chittibabu, Kethinni G.; Zakeeruddin, Shaik M.; Grä tzel, Michael; McGehee, Michael D.

2010-01-01

We report using doctor-blading to replace conventional spin coating for the deposition of the hole-transport material spiro-OMeTAD (2,20,7,70-tetrakis-(N, N-di-p-methoxyphenylamine)- 9,90-spirobifluorene) in solid-state dye-sensitized solar cells

A hole modulator for InGaN/GaN light-emitting diodes

International Nuclear Information System (INIS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-01-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm 2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs

Effect of eggshell temperature and a hole in the air cell on the perinatal development and physiology of layer hatchlings

NARCIS (Netherlands)

Molenaar, R.; Vries, de S.; Anker, van den I.; Meijerhof, R.; Kemp, B.; Brand, van den H.

2010-01-01

To investigate the effect of incubation conditions on layer hatchlings, an experiment was performed in which layer eggs were incubated at a normal (37.8°C) or high (38.9°C) eggshell temperature (EST) and a hole was punctured in the air cell of half of the eggs in both EST treatments from d 14 of

Black Hole Universe Model and Dark Energy

Science.gov (United States)

Zhang, Tianxi

2011-01-01

Considering black hole as spacetime and slightly modifying the big bang theory, the author has recently developed a new cosmological model called black hole universe, which is consistent with Mach principle and Einsteinian general relativity and self consistently explains various observations of the universe without difficulties. According to this model, the universe originated from a hot star-like black hole and gradually grew through a supermassive black hole to the present universe by accreting ambient material and merging with other black holes. The entire space is infinitely and hierarchically layered and evolves iteratively. The innermost three layers are the universe that we lives, the outside space called mother universe, and the inside star-like and supermassive black holes called child universes. The outermost layer has an infinite radius and zero limits for both the mass density and absolute temperature. All layers or universes are governed by the same physics, the Einstein general relativity with the Robertson-Walker metric of spacetime, and tend to expand outward physically. When one universe expands out, a new similar universe grows up from its inside black holes. The origin, structure, evolution, expansion, and cosmic microwave background radiation of black hole universe have been presented in the recent sequence of American Astronomical Society (AAS) meetings and published in peer-review journals. This study will show how this new model explains the acceleration of the universe and why dark energy is not required. We will also compare the black hole universe model with the big bang cosmology.

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

International Nuclear Information System (INIS)

Lu, Yu-Hsuan; Pilkuhn, Manfred H.; Fu, Yi-Keng; Chu, Mu-Tao; Huang, Shyh-Jer; Su, Yan-Kuin; Wang, Kang L.

2014-01-01

The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lu, Yu-Hsuan; Pilkuhn, Manfred H. [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Fu, Yi-Keng; Chu, Mu-Tao [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China); Huang, Shyh-Jer, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw, E-mail: totaljer48@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electronic Engineering, Kun-Shan University, Tainan 71003, Taiwan (China); Wang, Kang L. [Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2014-03-21

The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL.

Hypodense regions (holes) in the retinal nerve fiber layer in frequency-domain OCT scans of glaucoma patients and suspects.

Science.gov (United States)

Xin, Daiyan; Talamini, Christine L; Raza, Ali S; de Moraes, Carlos Gustavo V; Greenstein, Vivienne C; Liebmann, Jeffrey M; Ritch, Robert; Hood, Donald C

2011-09-09

To better understand hypodense regions (holes) that appear in the retinal nerve fiber layer (RNFL) of frequency-domain optical coherence tomography (fdOCT) scans of patients with glaucoma and glaucoma suspects. Peripapillary circle (1.7-mm radius) and cube optic disc fdOCT scans were obtained on 208 eyes from 110 patients (57.4 ± 13.2 years) with glaucomatous optic neuropathy (GON) and 45 eyes of 45 controls (48.0 ± 12.6 years) with normal results of fundus examination. Holes in the RNFL were identified independently by two observers on the circle scans. Holes were found in 33 (16%) eyes of 28 (25%) patients; they were not found in any of the control eyes. Twenty-four eyes had more than one hole. Although some holes were relatively large, others were small. In general, the holes were located adjacent to blood vessels; only three eyes had isolated holes that were not adjacent to a vessel. The holes tended to be in the regions that are thickest in healthy controls and were associated with arcuate defects in patients. Holes were not seen in the center of the temporal disc region. They were more common in the superior (25 eyes) than in the inferior (15 eyes) disc. Of the 30 eyes with holes with reliable visual fields, seven were glaucoma suspect eyes with normal visual fields. The holes in the RNFL seen in patients with GON were probably due to a local loss of RNFL fibers and can occur in the eyes of glaucoma suspects with normal visual fields.

Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

KAUST Repository

Eita, Mohamed S.; El, Labban Abdulrahman; Usman, Anwar; Beaujuge, Pierre; Mohammed, Omar F.

2016-01-01

An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc

Radiation transport around Kerr black holes

Science.gov (United States)

Schnittman, Jeremy David

This Thesis describes the basic framework of a relativistic ray-tracing code for analyzing accretion processes around Kerr black holes. We begin in Chapter 1 with a brief historical summary of the major advances in black hole astrophysics over the past few decades. In Chapter 2 we present a detailed description of the ray-tracing code, which can be used to calculate the transfer function between the plane of the accretion disk and the detector plane, an important tool for modeling relativistically broadened emission lines. Observations from the Rossi X-Ray Timing Explorer have shown the existence of high frequency quasi-periodic oscillations (HFQPOs) in a number of black hole binary systems. In Chapter 3, we employ a simple "hot spot" model to explain the position and amplitude of these HFQPO peaks. The power spectrum of the periodic X-ray light curve consists of multiple peaks located at integral combinations of the black hole coordinate frequencies, with the relative amplitude of each peak determined by the orbital inclination, eccentricity, and hot spot arc length. In Chapter 4, we introduce additional features to the model to explain the broadening of the QPO peaks as well as the damping of higher frequency harmonics in the power spectrum. The complete model is used to fit the power spectra observed in XTE J1550-564, giving confidence limits on each of the model parameters. In Chapter 5 we present a description of the structure of a relativistic alpha- disk around a Kerr black hole. Given the surface temperature of the disk, the observed spectrum is calculated using the transfer function mentioned above. The features of this modified thermal spectrum may be used to infer the physical properties of the accretion disk and the central black hole. In Chapter 6 we develop a Monte Carlo code to calculate the detailed propagation of photons from a hot spot emitter scattering through a corona surrounding the black hole. The coronal scattering has two major observable

Strategy to Boost the Efficiency of Mixed-Ion Perovskite Solar Cells: Changing Geometry of the Hole Transporting Material.

Science.gov (United States)

Zhang, Jinbao; Xu, Bo; Johansson, Malin B; Vlachopoulos, Nick; Boschloo, Gerrit; Sun, Licheng; Johansson, Erik M J; Hagfeldt, Anders

2016-07-26

The hole transporting material (HTM) is an essential component in perovskite solar cells (PSCs) for efficient extraction and collection of the photoinduced charges. Triphenylamine- and carbazole-based derivatives have extensively been explored as alternative and economical HTMs for PSCs. However, the improvement of their power conversion efficiency (PCE), as well as further investigation of the relationship between the chemical structure of the HTMs and the photovoltaic performance, is imperatively needed. In this respect, a simple carbazole-based HTM X25 was designed on the basis of a reference HTM, triphenylamine-based X2, by simply linking two neighboring phenyl groups in a triphenylamine unit through a carbon-carbon single bond. It was found that a lowered highest occupied molecular orbital (HOMO) energy level was obtained for X25 compared to that of X2. Besides, the carbazole moiety in X25 improved the molecular planarity as well as conductivity property in comparison with the triphenylamine unit in X2. Utilizing the HTM X25 in a solar cell with mixed-ion perovskite [HC(NH2)2]0.85(CH3NH3)0.15Pb(I0.85Br0.15)3, a highest reported PCE of 17.4% at 1 sun (18.9% under 0.46 sun) for carbazole-based HTM in PSCs was achieved, in comparison of a PCE of 14.7% for triphenylamine-based HTM X2. From the steady-state photoluminescence and transient photocurrent/photovoltage measurements, we conclude that (1) the lowered HOMO level for X25 compared to X2 favored a higher open-circuit voltage (Voc) in PSCs; (2) a more uniform formation of X25 capping layer than X2 on the surface of perovskite resulted in more efficient hole transport and charge extraction in the devices. In addition, the long-term stability of PSCs with X25 is significantly enhanced compared to X2 due to its good uniformity of HTM layer and thus complete coverage on the perovskite. The results provide important information to further develop simple and efficient small molecular HTMs applied in solar cells.

Effect of organic small-molecule hole injection materials on the performance of inverted organic solar cells

Science.gov (United States)

Li, Jie; Zheng, Yifan; Zheng, Ding; Yu, Junsheng

2016-07-01

In this study, the influence of small-molecule organic hole injection materials on the performance of organic solar cells (OSCs) as the hole transport layer (HTL) with an architecture of ITO/ZnO/P3HT:PC71BM/HTL/Ag has been investigated. A significant enhancement on the performance of OSCs from 1.06% to 2.63% is obtained by using N, N‧-bis(1-naphthalenyl)-N, N‧-bis-phenyl-(1, 1‧-biphenyl)-4, 4‧-diamine (NPB) HTL. Through the resistance simulation and space-charge limited current analysis, we found that NPB HTL cannot merely improve the hole mobility of the device but also form the Ohmic contact between the active layer and anode. Besides, when we apply mix HTL by depositing the NPB on the surface of molybdenum oxide, the power conversion efficiency of OSC are able to be further improved to 2.96%.

Efficient Carbon-Based CsPbBr3 Inorganic Perovskite Solar Cells by Using Cu-Phthalocyanine as Hole Transport Material

Science.gov (United States)

Liu, Zhiyong; Sun, Bo; Liu, Xingyue; Han, Jinghui; Ye, Haibo; Shi, Tielin; Tang, Zirong; Liao, Guanglan

2018-06-01

Metal halide perovskite solar cells (PSCs) have attracted extensive research interest for next-generation solution-processed photovoltaic devices because of their high solar-to-electric power conversion efficiency (PCE) and low fabrication cost. Although the world's best PSC successfully achieves a considerable PCE of over 20% within a very limited timeframe after intensive efforts, the stability, high cost, and up-scaling of PSCs still remain issues. Recently, inorganic perovskite material, CsPbBr3, is emerging as a promising photo-sensitizer with excellent durability and thermal stability, but the efficiency is still embarrassing. In this work, we intend to address these issues by exploiting CsPbBr3 as light absorber, accompanied by using Cu-phthalocyanine (CuPc) as hole transport material (HTM) and carbon as counter electrode. The optimal device acquires a decent PCE of 6.21%, over 60% higher than those of the HTM-free devices. The systematic characterization and analysis reveal a more effective charge transfer process and a suppressed charge recombination in PSCs after introducing CuPc as hole transfer layer. More importantly, our devices exhibit an outstanding durability and a promising thermal stability, making it rather meaningful in future fabrication and application of PSCs.[Figure not available: see fulltext.

Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

International Nuclear Information System (INIS)

Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

1988-01-01

Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

Turbulent transport in the atmospheric surface layer

Energy Technology Data Exchange (ETDEWEB)

Tagesson, Torbern [Dept. of Physical Geography and Ecosystem Science, Lund Univ., Lund (Sweden)

2012-04-15

In the modelling of transport and accumulation of the radioactive isotope carbon-14 (C-14) in the case of a potential release from a future repository of radioactive waste, it is important to describe the transport of the isotope in the atmosphere. This report aims to describe the turbulent transport within the lower part of the atmosphere; the inertial surface layer and the roughness sublayer. Transport in the inertial surface layer is dependent on several factors, whereof some can be neglected under certain circumstances. Under steady state conditions, fully developed turbulent conditions, in flat and horizontal homogeneous areas, it is possible to apply an eddy diffusivity approach for estimating vertical transport of C. The eddy diffusivity model assumes that there is proportionality between the vertical gradient and the transport of C. The eddy diffusivity is depending on the atmospheric turbulence, which is affected by the interaction between mean wind and friction of the ground surface and of the sensible heat flux in the atmosphere. In this report, it is described how eddy diffusivity of the inertial surface layer can be estimated from 3-d wind measurements and measurements of sensible heat fluxes. It is also described how to estimate the eddy diffusivity in the inertial surface layer from profile measurements of temperature and wind speed. Close to the canopy, wind and C profiles are influenced by effects of the surface roughness; this section of the atmosphere is called the roughness sublayer. Its height is up to {approx}3 times the height of the plant canopy. When the mean wind interacts with the canopy, turbulence is not only produced by shear stress and buoyancy, it is additionally created by wakes, which are formed behind the plants. Turbulence is higher than it would be over a flat surface, and the turbulent transport is hereby more efficient. Above the plant canopy, but still within the roughness sublayer, a function that compensates for the effect

Turbulent transport in the atmospheric surface layer

International Nuclear Information System (INIS)

Tagesson, Torbern

2012-04-01

In the modelling of transport and accumulation of the radioactive isotope carbon-14 (C-14) in the case of a potential release from a future repository of radioactive waste, it is important to describe the transport of the isotope in the atmosphere. This report aims to describe the turbulent transport within the lower part of the atmosphere; the inertial surface layer and the roughness sublayer. Transport in the inertial surface layer is dependent on several factors, whereof some can be neglected under certain circumstances. Under steady state conditions, fully developed turbulent conditions, in flat and horizontal homogeneous areas, it is possible to apply an eddy diffusivity approach for estimating vertical transport of C. The eddy diffusivity model assumes that there is proportionality between the vertical gradient and the transport of C. The eddy diffusivity is depending on the atmospheric turbulence, which is affected by the interaction between mean wind and friction of the ground surface and of the sensible heat flux in the atmosphere. In this report, it is described how eddy diffusivity of the inertial surface layer can be estimated from 3-d wind measurements and measurements of sensible heat fluxes. It is also described how to estimate the eddy diffusivity in the inertial surface layer from profile measurements of temperature and wind speed. Close to the canopy, wind and C profiles are influenced by effects of the surface roughness; this section of the atmosphere is called the roughness sublayer. Its height is up to ∼3 times the height of the plant canopy. When the mean wind interacts with the canopy, turbulence is not only produced by shear stress and buoyancy, it is additionally created by wakes, which are formed behind the plants. Turbulence is higher than it would be over a flat surface, and the turbulent transport is hereby more efficient. Above the plant canopy, but still within the roughness sublayer, a function that compensates for the effect of

A Monte Carlo Code for Relativistic Radiation Transport Around Kerr Black Holes

Science.gov (United States)

Schnittman, Jeremy David; Krolik, Julian H.

2013-01-01

We present a new code for radiation transport around Kerr black holes, including arbitrary emission and absorption mechanisms, as well as electron scattering and polarization. The code is particularly useful for analyzing accretion flows made up of optically thick disks and optically thin coronae. We give a detailed description of the methods employed in the code and also present results from a number of numerical tests to assess its accuracy and convergence.

HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

Energy Technology Data Exchange (ETDEWEB)

Sturm, James [Princeton Univ., NJ (United States)

2017-12-04

This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

Blob/hole formation and zonal-flow generation in the edge plasma of the JET tokamak

DEFF Research Database (Denmark)

Xu, G.S.; Naulin, Volker; Fundamenski, W.

2009-01-01

The first experimental evidence showing the connection between blob/hole formation and zonal-flow generation was obtained in the edge plasma of the JET tokamak. Holes as well as blobs are observed to be born in the edge shear layer, where zonal-flows shear off meso-scale coherent structures......, leading to disconnection of positive and negative pressure perturbations. The newly formed blobs transport azimuthal momentum up the gradient of the azimuthal flow and drive the zonal-flow shear while moving outwards. During this process energy is transferred from the meso-scale coherent structures...

Anisotropic bias dependent transport property of defective phosphorene layer

Science.gov (United States)

Umar Farooq, M.; Hashmi, Arqum; Hong, Jisang

2015-01-01

Phosphorene is receiving great research interests because of its peculiar physical properties. Nonetheless, no systematic studies on the transport properties modified due to defects have been performed. Here, we present the electronic band structure, defect formation energy and bias dependent transport property of various defective systems. We found that the defect formation energy is much less than that in graphene. The defect configuration strongly affects the electronic structure. The band gap vanishes in single vacancy layers, but the band gap reappears in divacancy layers. Interestingly, a single vacancy defect behaves like a p-type impurity for transport property. Unlike the common belief, we observe that the vacancy defect can contribute to greatly increasing the current. Along the zigzag direction, the current in the most stable single vacancy structure was significantly increased as compared with that found in the pristine layer. In addition, the current along the armchair direction was always greater than along the zigzag direction and we observed a strong anisotropic current ratio of armchair to zigzag direction. PMID:26198318

Bifurcation from stable holes to replicating holes in vibrated dense suspensions.

Science.gov (United States)

Ebata, H; Sano, M

2013-11-01

In vertically vibrated starch suspensions, we observe bifurcations from stable holes to replicating holes. Above a certain acceleration, finite-amplitude deformations of the vibrated surface continue to grow until void penetrates fluid layers, and a hole forms. We studied experimentally and theoretically the parameter dependence of the holes and their stabilities. In suspensions of small dispersed particles, the circular shapes of the holes are stable. However, we find that larger particles or lower surface tension of water destabilize the circular shapes; this indicates the importance of capillary forces acting on the dispersed particles. Around the critical acceleration for bifurcation, holes show intermittent large deformations as a precursor to hole replication. We applied a phenomenological model for deformable domains, which is used in reaction-diffusion systems. The model can explain the basic dynamics of the holes, such as intermittent behavior, probability distribution functions of deformation, and time intervals of replication. Results from the phenomenological model match the linear growth rate below criticality that was estimated from experimental data.

Electron-hole pairing and anomalous properties of layered high-Tc compounds

International Nuclear Information System (INIS)

Efetov, K.B.

1991-01-01

Band-structure pictures for layered high-T c materials available in the literature show that, besides the dispersive broad band responsible for metallic properties, there are at least two additional bands having minima and maxima near the Fermi surface. These additional bands belong to different planes (for example, CuO planes and BiO planes in Bi 2 Sr 2 CaCu 2 O 8 ) or to planes and chains (in YBa 2 Cu 3 O 7 ). Provided the Coulomb repulsion is not very weak, pairing of electrons and holes belonging to these additional bands in different planes or planes and chains is possible. It is shown that, if this possibility is realized, a transition in the additional bands into a state of an excitonic dielectric occurs. The spin of an electron-hole pair can be both 0 and 1. Due to the fact that the electron and the hole of the pair belong to different planes, there are no charge- or spin-density waves. This excitonic insulator can serve as a polarizing substance and give a strong attraction between electrons of the metallic band even if the bare interaction is repulsive. It is also shown that some interesting gapless excitations exist. Provided there are impurities in the system that scatter from plane to plane, these excitations are coupled to the electrons of the metallic band. This effective interaction can be described in terms of an effective mode P(ω) with ImP(ω)∼-sgnω. As a result, one can obtain such properties of the normal state as a linear dependence of the resistivity on temperature, linear dependence of the density of states on energy, constant background in the Raman-scattering intensity, large nuclear relaxation rate, etc., which are very well known from experiments

Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene

Energy Technology Data Exchange (ETDEWEB)

Piatti, E.; Galasso, S.; Tortello, M.; Nair, J.R.; Gerbaldi, C. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Bruna, M.; Borini, S. [Istituto Nazionale di Ricerca Metrologica (INRIM), 10135 Torino (Italy); Daghero, D. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Gonnelli, R.S., E-mail: renato.gonnelli@polito.it [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy)

2017-02-15

Highlights: • We fabricated few-layer graphene FETs by mechanical exfoliation and standard microfabrication techniques. • We employed a Li-TFSI based ion gel to induce carrier densities as high as ≈6e14 e{sup −}/cm{sup 2} in the devices' channel. • We found a strong asymmetry in the sheet conductance and mobility doping dependences between electron and hole doping. • We combined the experimental results with ab initio DFT calculations to obtain the average scattering lifetime of the charge carriers. • We found that the increase in the carrier density and an unexpected increase in the density of charged scattering centers compete in determining the scattering lifetime. - Abstract: We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer samples under a large induced surface charge density both above and below the glass transition temperature of the polymer. We find that the carrier mobility shows a strong asymmetry between the hole and electron doping regime. We then employ ab initio density functional theory (DFT) calculations to determine the average scattering lifetime from the experimental data. We explain its peculiar dependence on the carrier density in terms of the specific properties of the electrolyte we used in our experiments.

A New Cosmological Model: Black Hole Universe

Directory of Open Access Journals (Sweden)

Zhang T. X.

2009-07-01

Full Text Available A new cosmological model called black hole universe is proposed. According to this model, the universe originated from a hot star-like black hole with several solar masses, and gradually grew up through a supermassive black hole with billion solar masses to the present state with hundred billion-trillion solar masses by accreting ambient mate- rials and merging with other black holes. The entire space is structured with infinite layers hierarchically. The innermost three layers are the universe that we are living, the outside called mother universe, and the inside star-like and supermassive black holes called child universes. The outermost layer is infinite in radius and limits to zero for both the mass density and absolute temperature. The relationships among all layers or universes can be connected by the universe family tree. Mathematically, the entire space can be represented as a set of all universes. A black hole universe is a subset of the en- tire space or a subspace. The child universes are null sets or empty spaces. All layers or universes are governed by the same physics - the Einstein general theory of relativity with the Robertson-walker metric of spacetime - and tend to expand outward physically. The evolution of the space structure is iterative. When one universe expands out, a new similar universe grows up from its inside. The entire life of a universe begins from the birth as a hot star-like or supermassive black hole, passes through the growth and cools down, and expands to the death with infinite large and zero mass density and absolute temperature. The black hole universe model is consistent with the Mach principle, the observations of the universe, and the Einstein general theory of relativity. Its various aspects can be understood with the well-developed physics without any difficulty. The dark energy is not required for the universe to accelerate its expansion. The inflation is not necessary because the black hole universe

Bipolar Alq3-based complexes: Effect of hole-transporting substituent on the properties of Alq3-center

International Nuclear Information System (INIS)

Luo Jianxin; Lu Mangeng; Yang Chaolong; Tong Bihai; Liang Liyan

2012-01-01

Two bipolar Alq 3 -based complexes, tris{5-[(carbazole-9'-yl)methyl]-8-hydroxyquinoline} aluminum (Al(CzHQ) 3 ) and tris{5-[(phenothiazine-9'-yl)methyl]-8-hydroxyquinoline} aluminum (Al(PHQ) 3 ), involving an Alq 3 -center and three hole-transporting substituents (carbazole or phenothiazine), were prepared and characterized. Effects of hole-transporting substituent on the properties of Alq 3 -center were investigated in detail. It is found that the two complexes have improved hole-transporting performance and appropriate thermal stability (the 5%-weight-loss temperatures T 5% >260 °C). Photoluminescence (PL) spectra indicate that both energy transfer and electron transfer can take place simultaneously in the PL process of these complexes. Both thermodynamics and dynamics of the electron transfer were studied and corresponding parameters were calculated. Energy transfer is favorable for the PL of Alq 3 -center, while electron transfer is unfavorable for the PL of Alq 3 -center. These results will be useful to explore novel OLEDs material with increased efficiency. - Highlights: ► Effects of substituent on the properties of Alq 3 -center were investigated. ► Energy transfer and electron transfer can transfer from substituent to Alq 3 -center. ► The thermodynamics and dynamics of electron transfer were studied. ► The mechanisms of PL and EL of Al(CzHQ) 3 were studied and compared with each other.

Effects of pentacene-doped PEDOT:PSS as a hole-conducting layer on the performance characteristics of polymer photovoltaic cells

OpenAIRE

Kim, Hyunsoo; Lee, Jungrae; Ok, Sunseong; Choe, Youngson

2012-01-01

We have investigated the effect of pentacene-doped poly(3,4-ethylenedioxythiophene:poly(4-styrenesulfonate) [PEDOT:PSS] films as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the amount of pentacene and the annealing temperature of pentacene-doped PEDOT:PSS layer, the changes of performance characteristics were evaluated. Pentacene-doped PEDOT:PSS thin films were prepared by dissolving pentacene in 1-methyl-2-pyrrolidinone solvent and mixing with PEDO...

Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer

KAUST Repository

Jagadamma, Lethy Krishnan

2015-10-05

The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells

KAUST Repository

Peng, Wei

2016-03-02

High-quality perovskite monocrystalline films are successfully grown through cavitation-triggered asymmetric crystallization. These films enable a simple cell structure, ITO/CH3NH3PbBr3/Au, with near 100% internal quantum efficiency, promising power conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3NH3PbBr3 solar cells to date.

Alternative p-doped hole transport material for low operating voltage and high efficiency organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Murawski, Caroline, E-mail: caroline.murawski@iapp.de; Fuchs, Cornelius; Hofmann, Simone; Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); Gather, Malte C. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, KY16 9SS Scotland (United Kingdom)

2014-09-15

We investigate the properties of N,N′-[(Diphenyl-N,N′-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine (BF-DPB) as hole transport material (HTL) in organic light-emitting diodes (OLEDs) and compare BF-DPB to the commonly used HTLs N,N,N′,N′-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), 2,2′,7,7′-tetrakis(N,N′-di-p-methylphenylamino)-9,9′-spirobifluorene (Spiro-TTB), and N,N′-di(naphtalene-1-yl)-N,N′-diphenylbenzidine (NPB). The influence of 2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ p-dopant) concentration in BF-DPB on the operation voltage and efficiency of red and green phosphorescent OLEDs is studied; best results are achieved at 4 wt. % doping. Without any light extraction structure, BF-DPB based red (green) OLEDs achieve a luminous efficacy of 35 .1 lm/W (74 .0 lm/W) at 1000 cd/m{sup 2} and reach a very high brightness of 10 000 cd/m{sup 2} at a very low voltage of 3.2 V (3.1 V). We attribute this exceptionally low driving voltage to the high ionization potential of BF-DPB which enables more efficient hole injection from BF-DPB to the adjacent electron blocking layer. The high efficiency and low driving voltage lead to a significantly lower luminous efficacy roll-off compared to the other compounds and render BF-DPB an excellent HTL material for highly efficient OLEDs.

Study of Electrical Transport Properties of Thin Films Used as HTL and as Active Layer in Organic Solar Cells, through Impedance Spectroscopy Measurements

Directory of Open Access Journals (Sweden)

Camilo A. Otalora

2016-01-01

Full Text Available Impedance spectroscopy (IS is used for studying the electrical transport properties of thin films used in organic solar cells with structure ITO/HTL/active layer/cathode, where PEDOT:PSS (poly(3,4-ethylenedioxythiophene:polystyrene sulfonic acid and CuPC (tetrasulfonated copper-phthalocyanine were investigated as HTL (hole transport layer and P3HT:PCBM (poly-3-hexylthiophene:phenyl-C61-butyric acid methyl ester blends prepared from mesitylene and chlorobenzene based solutions were studied as active layer and Ag and Al were used as cathode. The study allowed determining the influence of the type of solvent used for the preparation of the active layer as well as the speed at which the solvents are removed on the carriers mobility. The effect of exposing the layer of P3HT to the air on its mobility was also studied. It was established that samples of P3HT and P3HT:PCBM prepared using mesitylene as a solvent have mobility values significantly higher than those prepared from chlorobenzene which is the solvent most frequently used. It was also determined that the mobility of carriers in P3HT films strongly decreases when this sample is exposed to air. In addition, it was found that the electrical properties of P3HT:PCBM thin films can be improved by removing the solvent slowly which is achieved by increasing the pressure inside the system of spin-coating during the film growth.

Carbon materials for enhancing charge transport in the advancements of perovskite solar cells

Science.gov (United States)

Hu, Ruiyuan; Chu, Liang; Zhang, Jian; Li, Xing'ao; Huang, Wei

2017-09-01

Organic-inorganic halide perovskite solar cells (PSCs) have become a new favorite in the photovoltaic field, due to the boosted efficiency up to 22.1%. Despite a flow of achievements, there are certain challenges to simultaneously meet high efficiency, large scale, low cost and high stability. Due to the low cost, extensive sources, high electrical conductivity and chemical stability, carbon materials have made undeniable contributions to play positive roles in developing PSCs. Carbon materials not only have the favorable conductivity but also bipolar advantage, which can transfer both electrons and holes. In this review, we will discuss how the carbon materials transfer charge or accelerate charge transport by incorporation in PSCs. Carbon materials can replace transparent conductive oxide layers, and enhance electron transport in electron transport layers. Moreover, carbon materials with continuous structure, especially carbon nanotubes and graphene, can provide direct charge transport channel that make them suitable additives or even substitutes in hole transport layers. Especially, the successful application of carbon materials as counter electrodes makes the devices full-printable, low temperature and high stability. Finally, a brief outlook is provided on the future development of carbon materials for PSCs, which are expected to devote more contributions in the future photovoltaic market.

Inverted polymer solar cells with Nafion® as the hole extraction layer: efficiency and lifetime studies

International Nuclear Information System (INIS)

Manceau, Matthieu; Berson, Solenn

2014-01-01

The use of Nafion ®  as the hole extraction layer in polymer solar cells is demonstrated in this work. Inverted devices were built on plastic foil with the following architecture: PET/ITO/ZnO/P3HT:PCBM/Nafion ® /Ag. The Nafion ®  was processed from a surfactant-free solution in alcoholic solvents on top of the active layer. Optimization of film thickness and annealing yielded fully functional devices with power conversion efficiency similar to others referenced, along with good operational stability. (paper)

Carrier Injection and Transport in Blue Phosphorescent Organic Light-Emitting Device with Oxadiazole Host

Directory of Open Access Journals (Sweden)

Tien-Lung Chiu

2012-06-01

Full Text Available In this paper, we investigate the carrier injection and transport characteristics in iridium(IIIbis[4,6-(di-fluorophenyl-pyridinato-N,C2']picolinate (FIrpic doped phosphorescent organic light-emitting devices (OLEDs with oxadiazole (OXD as the bipolar host material of the emitting layer (EML. When doping Firpic inside the OXD, the driving voltage of OLEDs greatly decreases because FIrpic dopants facilitate electron injection and electron transport from the electron-transporting layer (ETL into the EML. With increasing dopant concentration, the recombination zone shifts toward the anode side, analyzed with electroluminescence (EL spectra. Besides, EL redshifts were also observed with increasing driving voltage, which means the electron mobility is more sensitive to the electric field than the hole mobility. To further investigate carrier injection and transport characteristics, FIrpic was intentionally undoped at different positions inside the EML. When FIrpic was undoped close to the ETL, driving voltage increased significantly which proves the dopant-assisted-electron-injection characteristic in this OLED. When the undoped layer is near the electron blocking layer, the driving voltage is only slightly increased, but the current efficiency is greatly reduced because the main recombination zone was undoped. However, non-negligible FIrpic emission is still observed which means the recombination zone penetrates inside the EML due to certain hole-transporting characteristics of the OXD.

Effect of CoFe magnetic nanoparticles on the hole transport in poly(2-methoxy, 5-(2-ethylhexiloxy) 1,4-phenylenevinylene)

International Nuclear Information System (INIS)

Kumar, Pankaj; Kumar, Hemant; Chand, Suresh; Jain, S C; Kumar, Vikram; Kumar, Vinod; Pant, R P; Tandon, R P

2008-01-01

The effect of doping of CoFe magnetic nanoparticles (MNPs) on the hole transport in poly(2-methoxy,5-(2-ethylhexyloxy)-1,4-phenylenevinylene)(MEH-PPV) thin films has been investigated in the temperature range 280-120 K. Hole transport in MEH-PPV is found to be governed by space-charge-limited-conduction (SCLC) with exponential distribution of traps in energy space. Doping of CoFe MNPs in MEH-PPV reduces the hole mobility from 1 x 10 -5 to 6 x 10 -6 cm 2 V -1 s -1 by introducing new trap sites causing their net density increase from 1 x 10 18 to 2.1 x 10 18 cm -3 , which is likely to result in balanced injection and efficient recombination of charge carriers to improve the performance of polymer light emitting diodes

Minority-carrier transport in InGaAsSb thermophotovoltaic diodes

International Nuclear Information System (INIS)

Charache, G.; Martinelli, R.U.; Garbuzov, D.Z.; Lee, H.; Morris, N.; Odubanjo, T.; Connolly, J.C.

1997-05-01

Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 microm) bandgaps exhibit external quantum efficiencies of 59% at 2 microm. The devices have electron diffusion lengths as long as 29 microm in 8-microm-wide p-InGaAsSb layers and hole diffusion lengths of 3 microm in 6-microm-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths. At 632.8 nm the internal quantum efficiencies of diodes with 1- to 8-microm-wide p-layers are above 89% and are independent of the p-layer width, indicating long electron diffusion lengths. InGaAsSb has, therefore, excellent minority carrier transport properties that are well suited to efficient TPV diode operation. The structures were grown by molecular-beam epitaxy

Polymers Containing Diphenylvinyl-Substituted Indole Rings as Charge-Transporting Materials for OLEDs

Science.gov (United States)

Grigalevicius, S.; Zostautiene, R.; Sipaviciute, D.; Stulpinaite, B.; Volyniuk, D.; Grazulevicius, J. V.; Liu, L.; Xie, Z.; Zhang, B.

2016-02-01

Monomers and polymers containing electronically isolated diphenylvinyl-substituted indole rings were synthesized and characterized by nuclear magnetic resonance (NMR) and mass spectroscopies as well as by gel permeation chromatography. The polymers represent amorphous materials with glass transition temperatures of 91-109°C and thermal decomposition starting above 307°C. Electron photoemission spectra of thin films of the synthesized polymers revealed ionization potentials of 5.54-5.58 eV. The synthesized polymers were tested as hole-transporting materials in simple electroluminescent organic light-emitting diode (OLED) devices with tris(quinolin-8-olato)aluminium (Alq3) as an emitter as well as an electron-transporting layer. A green OLED device containing a hole-transporting layer of poly[1-(2,3-epithiopropyl)-2-methyl-3-(2,2-diphenylvinyl)índole] exhibited the best overall performance with a driving voltage of 4.0 V, maximum photometric efficiency of 2.8 cd/A and maximum brightness of about 4200 cd/m2.

Viscoplastic sculpting in stable triple layer heavy oil transport flow

Science.gov (United States)

Sarmadi, Parisa; Hormozi, Sarah; A. Frigaard, Ian

2017-11-01

In we introduced a novel methodology for efficient transport of heavy oil via a triple layer core-annular flow. Pumping pressures are significantly reduced by concentrating high shear rates to a lubricating layer, while ideas from Visco-Plastic Lubrication are used to eliminate interfacial instabilities. We purposefully position a shaped unyielded skin of a viscoplastic fluid between the transported oil and the lubricating fluid layer to balance the density difference between the fluids. Here we address the sculpting of the shaped skin within a concentric inflow manifold. We use the quasi-steady model to provide inputs to an axisymmetric triple layer computation, showing the development of the streamwise skin profile and establishment of the flow. For this, we use a finite element discretization with the augmented-Lagrangian method to represent the yield surface behaviour accurately and a PLIC method to track the interface motion.

Interlayer material transport during layer-normal shortening. Part I. The model

NARCIS (Netherlands)

Molen, I. van der

1985-01-01

To analyse mass-transfer during deformation, the case is considered of a multilayer experiencing a layer-normal shortening that is volume constant on the scale of many layers. Strain rate is homogeneously distributed on the layer-scale if diffusion is absent; when transport of matter between the

Hole-to-surface resistivity measurements at Gibson Dome (drill hole GD-1) Paradox basin, Utah

Science.gov (United States)

Daniels, J.J.

1984-01-01

Hole-to-surface resistivity measurements were made in a deep drill hole (GD-1), in San Juan County, Utah, which penetrated a sequence of sandstone, shale, and evaporite. These measurements were made as part of a larger investigation to study the suitability of an area centered around the Gibson Dome structure for nuclear waste disposal. The magnitude and direction of the total electric field resulting from a current source placed in a drill hole is calculated from potential difference measurements for a grid of closely-spaced stations. A contour map of these data provides a detailed map of the distribution of the electric field away from the drill hole. Computation of the apparent resistivity from the total electric field helps to interpret the data with respect to the ideal situation of a layered earth. Repeating the surface measurements for different source depths gives an indication of variations in the geoelectric section with depth. The quantitative interpretation of the field data at Gibson Dome was hindered by the pressure of a conductive borehole fluid. However, a qualitative interpretation of the field data indicates the geoelectric section around drill hole GD-1 is not perfectly layered. The geoelectric section appears to dip to the northwest, and contains anomalies in the resistivity distribution that may be representative of localized thickening or folding of the salt layers.

Stacking layered structure of polymer light emitting diodes prepared by evaporative spray deposition using ultradilute solution for improving carrier balance

International Nuclear Information System (INIS)

Aoki, Youichi; Shakutsui, Masato; Fujita, Katsuhiko

2009-01-01

Polymer light-emitting diodes (PLEDs) with staking layered structures are prepared by the evaporative spray deposition using ultradilute solution (ESDUS) method, which has enabled forming a polymer layer onto another polymer layer even if both polymers are soluble in a solvent used for the preparation. By this method, polymers having various HOMO and LUMO levels can be stacked as a hole transport layer, an emitting layer and an electron transport layer as commonly employed in small molecule-based organic light emitting diodes. Here we demonstrated that a PLED having a tri-layer structure using three kinds of polymers showed significant improvement in quantum efficiency compared with those having a single or bi-layer structure of corresponding polymers.

Determination of charge carrier mobility of hole transporting polytriarylamine-based diodes

International Nuclear Information System (INIS)

Barea, Eva M.; Garcia-Belmonte, Germa; Sommer, Michael; Huettner, Sven; Bolink, Henk J.; Thelakkat, Mukundan

2010-01-01

Hole transport properties of three different side chain poly(triarylamines) have been determined by means of the analysis of steady-state current-voltage characteristics using co-planar diode structures. The interpretation is based on space-charge limited models with field-dependent mobility. Mobilities between ∼ 10 -8 and 10 -6 cm 2 V -1 s -1 are obtained. The highest mobility is achieved for poly(tetraphenylbenzidine) devices and the lowest for poly(triphenylamine) devices. Electron-rich methoxy substituents increase the mobility of poly(triphenylamine)s. A comparison of the mobility values with those obtained using organic field-effect transistors is also given.

Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors.

Science.gov (United States)

Baek, Seung Woon; Ha, Jong-Woon; Yoon, Minho; Hwang, Do-Hoon; Lee, Jiyoul

2018-06-06

Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting

The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells

KAUST Repository

Brennan, Thomas P.; Bakke, Jonathan R.; Ding, I-Kang; Hardin, Brian E.; Nguyen, William H.; Mondal, Rajib; Bailie, Colin D.; Margulis, George Y.; Hoke, Eric T.; Sellinger, Alan; McGehee, Michael D.; Bent, Stacey F.

2012-01-01

Atomic layer deposition (ALD) was used to fabricate Al 2O 3 recombination barriers in solid-state dye-sensitized solar cells (ss-DSSCs) employing an organic hole transport material (HTM) for the first time. Al 2O 3 recombination barriers of varying

Chemical Vapor Transport Deposition of Molybdenum Disulfide Layers Using H2O Vapor as the Transport Agent

Directory of Open Access Journals (Sweden)

Shichao Zhao

2018-02-01

Full Text Available Molybdenum disulfide (MoS2 layers show excellent optical and electrical properties and have many potential applications. However, the growth of high-quality MoS2 layers is a major bottleneck in the development of MoS2-based devices. In this paper, we report a chemical vapor transport deposition method to investigate the growth behavior of monolayer/multi-layer MoS2 using water (H2O as the transport agent. It was shown that the introduction of H2O vapor promoted the growth of MoS2 by increasing the nucleation density and continuous monolayer growth. Moreover, the growth mechanism is discussed.

Influence of Weak Base Addition to Hole-Collecting Buffer Layers in Polymer:Fullerene Solar Cells

Directory of Open Access Journals (Sweden)

Jooyeok Seo

2017-02-01

Full Text Available We report the effect of weak base addition to acidic polymer hole-collecting layers in normal-type polymer:fullerene solar cells. Varying amounts of the weak base aniline (AN were added to solutions of poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate (PEDOT:PSS. The acidity of the aniline-added PEDOT:PSS solutions gradually decreased from pH = 1.74 (AN = 0 mol% to pH = 4.24 (AN = 1.8 mol %. The electrical conductivity of the PEDOT:PSS-AN films did not change much with the pH value, while the ratio of conductivity between out-of-plane and in-plane directions was dependent on the pH of solutions. The highest power conversion efficiency (PCE was obtained at pH = 2.52, even though all devices with the PEDOT:PSS-AN layers exhibited better PCE than those with the pristine PEDOT:PSS layers. Atomic force microscopy investigation revealed that the size of PEDOT:PSS domains became smaller as the pH increased. The stability test for 100 h illumination under one sun condition disclosed that the PCE decay was relatively slower for the devices with the PEDOT:PSS-AN layers than for those with pristine PEDOT:PSS layers.

Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer

KAUST Repository

Jagadamma, Lethy Krishnan; Al-Senani, Mohammed; Amassian, Aram

2015-01-01

The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems

Liquid electrolyte-free, solid-state solar cells with inorganic hole transport materials

Energy Technology Data Exchange (ETDEWEB)

Kanatzidis, Mercouri G.; Chung, In; Lee, Byunghong; Chang, Robert P. H.

2017-10-31

Photovoltaic cells incorporating the compounds A/M/X compounds as hole transport materials are provide. The A/M/X compounds comprise one or more A moieties, one or more M atoms and one or more X atoms. The A moieties are selected from organic cations and elements from Group 1 of the periodic table, the M atoms are selected from elements from at least one of Groups 3, 4, 5, 13, 14 or 15 of the periodic table, and the X atoms are selected from elements from Group 17 of the periodic table.

Determination of charge carrier mobility of hole transporting polytriarylamine-based diodes

Energy Technology Data Exchange (ETDEWEB)

Barea, Eva M. [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, 12071 Castello (Spain); Garcia-Belmonte, Germa, E-mail: garciag@uji.e [Photovoltaic and Optoelectronic Devices Group, Departament de Fisica, Universitat Jaume I, 12071 Castello (Spain); Sommer, Michael; Huettner, Sven [Applied Functional Polymers, Universitaet Bayreuth, 95440 Bayreuth (Germany); Bolink, Henk J. [Molecular Science Institute-Universitat de Valencia, Poligon La Coma s/n, 46980 Paterna, Valencia (Spain); Thelakkat, Mukundan, E-mail: mukundan.thelakkat@uni-bayreuth.d [Applied Functional Polymers, Universitaet Bayreuth, 95440 Bayreuth (Germany)

2010-04-02

Hole transport properties of three different side chain poly(triarylamines) have been determined by means of the analysis of steady-state current-voltage characteristics using co-planar diode structures. The interpretation is based on space-charge limited models with field-dependent mobility. Mobilities between {approx} 10{sup -8} and 10{sup -6} cm{sup 2} V{sup -1} s{sup -1} are obtained. The highest mobility is achieved for poly(tetraphenylbenzidine) devices and the lowest for poly(triphenylamine) devices. Electron-rich methoxy substituents increase the mobility of poly(triphenylamine)s. A comparison of the mobility values with those obtained using organic field-effect transistors is also given.

CO2 Plasma-Treated TiO2 Film as an Effective Electron Transport Layer for High-Performance Planar Perovskite Solar Cells.

Science.gov (United States)

Wang, Kang; Zhao, Wenjing; Liu, Jia; Niu, Jinzhi; Liu, Yucheng; Ren, Xiaodong; Feng, Jiangshan; Liu, Zhike; Sun, Jie; Wang, Dapeng; Liu, Shengzhong Frank

2017-10-04

Perovskite solar cells (PSCs) have received great attention because of their excellent photovoltaic properties especially for the comparable efficiency to silicon solar cells. The electron transport layer (ETL) is regarded as a crucial medium in transporting electrons and blocking holes for PSCs. In this study, CO 2 plasma generated by plasma-enhanced chemical vapor deposition (PECVD) was introduced to modify the TiO 2 ETL. The results indicated that the CO 2 plasma-treated compact TiO 2 layer exhibited better surface hydrophilicity, higher conductivity, and lower bulk defect state density in comparison with the pristine TiO 2 film. The quality of the stoichiometric TiO 2 structure was improved, and the concentration of oxygen-deficiency-induced defect sites was reduced significantly after CO 2 plasma treatment for 90 s. The PSCs with the TiO 2 film treated by CO 2 plasma for 90 s exhibited simultaneously improved short-circuit current (J SC ) and fill factor. As a result, the PSC-based TiO 2 ETL with CO 2 plasma treatment affords a power conversion efficiency of 15.39%, outperforming that based on pristine TiO 2 (13.54%). These results indicate that the plasma treatment by the PECVD method is an effective approach to modify the ETL for high-performance planar PSCs.

Polymer and small molecule based hybrid light source

Science.gov (United States)

Choong, Vi-En; Choulis, Stelios; Krummacher, Benjamin Claus; Mathai, Mathew; So, Franky

2010-03-16

An organic electroluminescent device, includes: a substrate; a hole-injecting electrode (anode) coated over the substrate; a hole injection layer coated over the anode; a hole transporting layer coated over the hole injection layer; a polymer based light emitting layer, coated over the hole transporting layer; a small molecule based light emitting layer, thermally evaporated over the polymer based light emitting layer; and an electron-injecting electrode (cathode) deposited over the electroluminescent polymer layer.

Semianalytical solutions of radioactive or reactive tracer transport in layered fractured media

International Nuclear Information System (INIS)

Moridis, G.J.; Bodvarsson, G.S.

2001-01-01

In this paper, semianalytical solutions are developed for the problem of transport of radioactive or reactive tracers (solutes or colloids) through a layered system of heterogeneous fractured media with misaligned fractures. The tracer transport equations in the matrix account for (a) diffusion, (b) surface diffusion (for solutes only), (c) mass transfer between the mobile and immobile water fractions, (d) linear kinetic or equilibrium physical, chemical, or combined solute sorption or colloid filtration, and (e) radioactive decay or first order chemical reactions. Any number of radioactive decay daughter products (or products of a linear, first-order reaction chain) can be tracked. The tracer-transport equations in the fractures account for the same processes, in addition to advection and hydrodynamic dispersion. Additionally, the colloid transport equations account for straining and velocity adjustments related to the colloidal size. The solutions, which are analytical in the Laplace space, are numerically inverted to provide the solution in time and can accommodate any number of fractured and/or porous layers. The solutions are verified using analytical solutions for limiting cases of solute and colloid transport through fractured and porous media. The effect of important parameters on the transport of 3 H, 237 Np and 239 Pu (and its daughters) is investigated in several test problems involving layered geological systems of varying complexity. 239 Pu colloid transport problems in multilayered systems indicate significant colloid accumulations at straining interfaces but much faster transport of the colloid than the corresponding strongly sorbing solute species

A numerical study on the charge transport in TPD/Alq3-based organic light emitting diodes.

Science.gov (United States)

Kim, K S; Hwang, Y W; Lee, H G; Won, T Y

2014-08-01

We report our simulation study on the charge transport characteristic of the multi-layer structure for organic light emitting diodes (OLEDs). We performed a numerical simulation on a multilayer structure comprising a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (ETL) between both electrodes. The material of the HTL is TPD (N,N'-Bis (3-methylphenyl)-N,N'-bis(phenyl) benzidine), and the ETL includes Alq3 (Tris (8-hyroxyquinolinato) aluminium). Here, we investigated the parameters such as recombination rates which influence the efficiency of the charge transport between layers in bilayer OLEDs. We also analyzed a transient response during the turn on/off period and the carrier transport in accordance with the variation of the injection barrier and applied voltage. In addition, our numerical simulation revealed that the insertion of the EML affects the photonic characteristics in bilayer structure and also the efficiency due to the difference in the internal barrier height.

49 CFR 230.38 - Telltale holes.

Science.gov (United States)

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Telltale holes. 230.38 Section 230.38... Staybolts § 230.38 Telltale holes. (a) Staybolts less than 8 inches long. All staybolts shorter than 8 inches, except flexible bolts, shall have telltale holes 3/16 inch to 7/32 inch diameter and at least 11...

Novel Hole Transporting Materials Based on 4-(9H-Carbazol-9-yltriphenylamine Derivatives for OLEDs

Directory of Open Access Journals (Sweden)

Quynh Pham Bao Nguyen

2014-09-01

Full Text Available During the past few years, organic light emitting diodes (OLEDs have been increasingly studied due to their emerging applicability. However, some of the properties of existing OLEDs could be improved, such as their overall efficiency and durability; these aspects have been addressed in the current study. A series of novel hole-transporting materials (HTMs 3a–c based on 4-(9H-carbazol-9-yltriphenylamine conjugated with different carbazole or triphenylamine derivatives have been readily synthesized by Suzuki coupling reactions. The resulting compounds showed good thermal stabilities with high glass transition temperatures between 148 and 165 °C. The introduction of HTMs 3b and 3c into the standard devices ITO/HATCN/NPB/HTMs 3 (indium tin oxide/dipyrazino(2,3-f:2ꞌ,3ꞌ-hquinoxaline 2,3,6,7,10,11-hexacarbonitrile/N,Nꞌ-bis(naphthalen-1-yl-N,Nꞌ-bis(phenyl-benzidine/HTMs/CBP (4,4ꞌ-Bis(N-carbazolyl-1,1ꞌ-biphenyl: 5% Ir(ppy3/Bphen/LiF/Al (tris[2-phenylpyridinato-C2,N]iridium(III/4,7-diphenyl-1,10-phenanthroline/LiF/Al resulted in significantly enhanced current, power, and external quantum efficiencies (EQE as compared to the reference device without any layers of HTMs 3.

Effect of Nonionic Surfactant Additive in PEDOT:PSS on PFO Emission Layer in Organic-Inorganic Hybrid Light-Emitting Diode.

Science.gov (United States)

Cho, Seong Rae; Porte, Yoann; Kim, Yun Cheol; Myoung, Jae-Min

2018-03-21

Poly(9,9-dioctylfluorene) (PFO) has attracted significant interests owing to its versatility in electronic devices. However, changes in its optical properties caused by its various phases and the formation of oxidation defects limit the application of PFO in light-emitting diodes (LEDs). We investigated the effects of the addition of Triton X-100 (hereinafter shortened as TX) in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to induce interlayer diffusion between PEDOT:PSS and PFO to enhance the stability of the PFO phase and suppress its oxidation. Photoluminescence (PL) measurement on PFO/TX-mixed PEDOT:PSS layers revealed that, upon increasing the concentration of TX in the PEDOT:PSS layer, the β phase of PFO could be suppressed in favor of the glassy phase and the wide PL emission centered at 535 nm caused by ketone defects formed by oxidation was decreased considerably. LEDs were then fabricated using PFO as an emission layer, TX-mixed PEDOT:PSS as hole-transport layer, and zinc oxide (ZnO) nanorods as electron-transport layer. As the TX concentration reached 3 wt %, the devices exhibited dramatic increases in current densities, which were attributed to the enhanced hole injection due to TX addition, along with a shift in the dominant emission wavelength from a green electroluminescence (EL) emission centered at 518 nm to a blue EL emission centered at 448 nm. The addition of TX in PEDOT:PSS induced a better hole injection in the PFO layer, and through interlayer diffusion, stabilized the glassy phase of PFO and limited the formation of oxidation defects.

[Performance dependence of organic light-emitting devices on the thickness of Alq3 emitting layer].

Science.gov (United States)

Lian, Jia-rong; Liao, Qiao-sheng; Yang, Rui-bo; Zheng, Wei; Zeng, Peng-ju

2010-10-01

The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

Solute transport in aggregated and layered porous media

International Nuclear Information System (INIS)

Koch, S.

1993-01-01

This work is a contribution to research in soil physics dealing with solute transport in porous media. The influence of structural inhomogeneities on solute transport is investigated. Detailed experiments at the laboratory scale are used to enlighten distinct processes which cannot be studied separately at field scale. Two main aspects are followed up: (i) to show the influence of aggregation of a porous medium on breakthrough time and spreading of an inert tracer and consequences on the estimation of parameter values of models describing solute transport in aggregated systems, (ii) to investigate the influences on the dispersion process when stratification is perpendicular to the direction of flow. Several concepts of modelling solute transport in soil are discussed. Models based on the convection-dispersion equation (CDE) are emphasized because they are used here to model solute transport experiments conducted with aggregated porous media. Stochastic concepts are introduced to show the limitations of the deterministic CDE approaches. Experiments are done in columns containing two kinds of solid phases and were saturated with water. The solid phases are porous and solid glass beads exhibiting a distinctly unimodal or bimodal pore size distribution. Experimental breakthrough curves (BTCs) are modelled with the CDE, a bicontinuum model with a phenomenological mass transfer rate and a bicontinuum spherical diffusion model. Experiments are also done in columns that are unsaturated containing porous materials that are layered. Flow is made at a steady rate. It is shown that layer boundaries have a severe influence on lateral mixing. They may force streamlines to converge or cause a lateral redistribution of solutes. (author) figs., tabs., 122 refs

Prognostic significance of delayed structural recovery after macular hole surgery

DEFF Research Database (Denmark)

Christensen, Ulrik C; Krøyer, Kristian; Sander, Birgit

2009-01-01

was used; however, secondary macular hole surgery had a significant influence on diameter of photoreceptor layer discontinuity at 3 months. CONCLUSIONS: Structural recovery in the form of photoreceptor layer discontinuity with a diameter of more than approximately 1500 microm 3 months after macular hole...

Optoelectronic devices, low temperature preparation methods, and improved electron transport layers

KAUST Repository

Eita, Mohamed S.

2016-08-04

An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

3,4-Phenylenedioxythiophene (PheDOT) Based Hole-Transporting Materials for Perovskite Solar Cells.

Science.gov (United States)

Chen, Jian; Chen, Bai-Xue; Zhang, Fang-Shuai; Yu, Hui-Juan; Ma, Shuang; Kuang, Dai-Bin; Shao, Guang; Su, Cheng-Yong

2016-04-05

Two new electron-rich molecules based on 3,4-phenylenedioxythiophene (PheDOT) were synthesized and successfully adopted as hole-transporting materials (HTMs) in perovskite solar cells (PSCs). X-ray diffraction, absorption spectra, photoluminescence spectra, electrochemical properties, thermal stabilities, hole mobilities, conductivities, and photovoltaic parameters of PSCs based on these two HTMs were compared with each other. By introducing methoxy substituents into the main skeleton, the energy levels of PheDOT-core HTM were tuned to match with the perovskite, and its hole mobility was also improved (1.33×10(-4)  cm(2)  V(-1)  s(-1) , being higher than that of spiro-OMeTAD, 2.34×10(-5)  cm(2)  V(-1)  s(-1)). The PSC based on MeO-PheDOT as HTM exhibits a short-circuit current density (Jsc) of 18.31 mA cm(-2) , an open-circuit potential (Voc ) of 0.914 V, and a fill factor (FF) of 0.636, yielding an encouraging power conversion efficiency (PCE) of 10.64 % under AM 1.5G illumination. These results give some insight into how the molecular structures of HTMs affect their performances and pave the way for developing high-efficiency and low-cost HTMs for PSCs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dissimilar mechanism of executing hole transfer by WO{sub 3} and MoO{sub 3} nanoparticles in organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Eung-Kyu; Kim, Jae-Hyoung; Kim, Ji-Hwan; Park, Min-Ho; Lee, Dong-Hoon; Kim, Yong-Sang, E-mail: yongsang@skku.edu

2015-07-31

We investigated the effect of metal oxide nanoparticles (NPs) in poly (3,4 ethylenedioxythiophence):poly (styrene-sulfonate) layer for the light harvestation in poly (3-hexylthiophene):[6,6]-pheny-C{sub 61}-butyric acid methyl ester organic solar cells. The role of tungsten trioxide nanoparticles (WO{sub 3}) and molybdenum trioxide nanoparticles (MoO{sub 3}) in enhancing the efficiency of solar cells was compared. Due to the difference in the energy band structure of the two nanoparticles, the WO{sub 3} NPs acted as a hole blocking layer, whereas MoO{sub 3} NPs helped in the hole transfer. The solar cell with WO{sub 3} NPs at 1.5 wt% concentration showed a power conversion efficiency of 4.22% under AM 1.5G illumination and the device blended with 2 wt% of MoO{sub 3} NPs showed a power conversion efficiency of 4.40%. We measured various electrical properties including, electrochemical impedance spectroscopy and recombination mechanisms using the light intensity dependent current–voltage measurement of organic solar cell. - Highlights: • An organic solar cell was fabricated with WO{sub 3} or MoO{sub 3} NPs mixed PEDOT:PSS layer. • The effects of metallic NPs in PEDOT:PSS light harvesting system was investigated. • WO{sub 3} NPs acted as a hole blocking layer and MoO{sub 3} NPs helped in hole transporting. • The MoO{sub 3} NPs gave higher performance, reduced charge recombination and low resistance.

Anisotropic carrier mobility in single- and bi-layer C3N sheets

Science.gov (United States)

Wang, Xueyan; Li, Qingfang; Wang, Haifeng; Gao, Yan; Hou, Juan; Shao, Jianxin

2018-05-01

Based on the density functional theory combined with the Boltzmann transport equation with relaxation time approximation, we investigate the electronic structure and predict the carrier mobility of single- and bi-layer newly fabricated 2D carbon nitrides C3N. Although C3N sheets possess graphene-like planar hexagonal structure, the calculated carrier mobility is remarkably anisotropic, which is found mainly induced by the anisotropic effective masses and deformation potential constants. Importantly, we find that both the electron and hole mobilities are considerable high, for example, the hole mobility along the armchair direction of single-layer C3N sheets can arrive as high as 1.08 ×104 cm2 V-1 s-1, greatly larger than that of C2N-h2D and many other typical 2D materials. Owing to the high and anisotropic carrier mobility and appropriate band gap, single- and bi-layer semiconducting C3N sheets may have great potential applications in high performance electronic and optoelectronic devices.

Transport properties of diazonium functionalized graphene: chiral two-dimensional hole gases

International Nuclear Information System (INIS)

Huang Ping; Jing Long; Zhu Huarui; Gao Xueyun

2012-01-01

The electric transport properties of diazonium functionalized graphene (DFG) were investigated. The temperature dependence of the resistivity (ρ-T) and the Shubnikov-de Haas oscillation of the DFG revealed two-dimensional hole gas (2DHG) behaviors. The DFGs exhibited unusual weak localization behaviors in which both inelastic and chirality-breaking elastic scattering processes should be taken into account, meaning that graphene chirality was maintained. Because of the giant decrease in the diffusion coefficient, the scattering rates remained relatively low in the presence of suppression of the scattering lengths. The decreases of both the mean free path and the Fermi velocity were responsible for the suppression of the diffusion coefficient and hence the charge mobility. (paper)

OPTIMISATION OF BUFFER SIZE FOR ENHANCING QOS OF VIDEO TRAFFIC USING CROSS LAYERED HYBRID TRANSPORT LAYER PROTOCOL APPROACH

Directory of Open Access Journals (Sweden)

S. Matilda

2011-03-01

Full Text Available Video streaming is gaining importance, with the wide popularity of multimedia rich applications in the Internet. Video streams are delay sensitive and require seamless flow for continuous visualization. Properly designed buffers offer a solution to queuing delay. The diagonally opposite QoS metrics associated with video traffic poses an optimization problem, in the design of buffers. This paper is a continuation of our previous work [1] and deals with the design of buffers. It aims at finding the optimum buffer size for enhancing QoS offered to video traffic. Network-centric QoS provisioning approach, along with hybrid transport layer protocol approach is adopted, to arrive at an optimum size which is independent of RTT. In this combinational approach, buffers of routers and end devices are designed to satisfy the various QoS parameters at the transport layer. OPNET Modeler is used to simulate environments for testing the design. Based on the results of simulation it is evident that the hybrid transport layer protocol approach is best suited for transmitting video traffic as it supports the economical design.

Effect of mixed hole transporting host on the mobility, Gaussian density of states and efficiencies of a heterojunction phosphorescent organic light emitting diode

International Nuclear Information System (INIS)

Talik, N A; Woon, K L; Yap, B K

2016-01-01

We present an in-depth study of the hole transport in poly(vinylcarbazole) PVK films blended with small molecule tris(4-carbazoyl-9-ylphenyl)amine (TcTa). Doping TcTa in PVK introduces shallow hole traps when the doping concentration is lower than 20 wt%. It becomes percolative at higher concentrations. The energetic disorder σ of the blended system reduces from ∼72 meV at 0 wt% TcTa to ∼41 meV at 50 wt% TcTa. A correlation between σ and the film morphologies suggests that the blending of TcTa molecules in the film does not only change the film homogeneity and roughness but also the energetic disorder. In addition to the mobility study, we fabricated a red phosphorescent organic light emitting diode with the same blending system. By doping merely 5 wt% of TcTa into PVK as mixed hole-transporting hosts, the efficiency of the deep red heterojunction phosphorescent organic light emitting diode increased from 2 cd A −1 to 4 cd A −1 , suggesting that TcTa molecules assist in hole injection. (paper)

Influence of geologic layering on heat transport and storage in an aquifer thermal energy storage system

Science.gov (United States)

Bridger, D. W.; Allen, D. M.

2014-01-01

A modeling study was carried out to evaluate the influence of aquifer heterogeneity, as represented by geologic layering, on heat transport and storage in an aquifer thermal energy storage (ATES) system in Agassiz, British Columbia, Canada. Two 3D heat transport models were developed and calibrated using the flow and heat transport code FEFLOW including: a "non-layered" model domain with homogeneous hydraulic and thermal properties; and, a "layered" model domain with variable hydraulic and thermal properties assigned to discrete geological units to represent aquifer heterogeneity. The base model (non-layered) shows limited sensitivity for the ranges of all thermal and hydraulic properties expected at the site; the model is most sensitive to vertical anisotropy and hydraulic gradient. Simulated and observed temperatures within the wells reflect a combination of screen placement and layering, with inconsistencies largely explained by the lateral continuity of high permeability layers represented in the model. Simulation of heat injection, storage and recovery show preferential transport along high permeability layers, resulting in longitudinal plume distortion, and overall higher short-term storage efficiencies.

Application of OCT in traumatic macular hole

Directory of Open Access Journals (Sweden)

Wen-Li Fu

2017-12-01

Full Text Available AIM: To observe the application of optical coherence tomography(OCTin the diseases of traumatic macular hole. METHODS: Twenty-five eyes of 23 patients with traumatic macular hole from January 2015 to January 2017 were enrolled in this study, including 9 eyes treated without surgeries, 16 eyes with surgeries. The image features were analyzed using OCT from ZEISS. RESULTS: The OCT characteristics in patients with traumatic macular hole were partial or full-thickness disappearance of the neuro-epithelium. Posterior vitreous detachment was not seen in the traumatic macular hole. OCT examination revealed that 4 eyes had partial detachment of macular hole and 21 eyes had full thickness detachment. Of the twenty-one eyes, 4 eyes had simple macular hole, 10 eyes had macular full-layer division with peripheral nerve epithelium edema, 7 eyes had the macular full-layer hole with the neuro-epithelium localized detachment. In the 25 eyes, 9 eyes did not undergo the surgery, of which 7 eyes were self-healing; 16 eyes were surgically treated. Postoperative OCT showed the macular structure were normal in 12 eyes with the visual acuity improved 3 lines; retinal nerve epithelium were thinning in 4 eyes, visual acuities were not significant improved after surgery. CONCLUSION: OCT examination is necessary for the diagnosis and treatment of traumatic macular hole.

White Organic Light-Emitting Diodes Using Two Phosphorescence Materials in a Starburst Hole-Transporting Layer

Directory of Open Access Journals (Sweden)

Tomoya Inden

2012-01-01

Full Text Available We fabricated two kinds of white organic light-emitting diodes (WOLEDs; one consisted of two emissive materials of red and blue, and the other of three emissive materials of red, green, and blue. The red and blue emissive materials were phosphorescent. We evaluated the thickness dependence of the CIE coordinate, the external quantum efficiency (EQE, and the luminance by changing the thicknesses of the Ir(btp2acac and FIrpic layers. Samples consisting of three emissive materials revealed the best CIE coordinate and the best EQE in the same sample structure. On the other hand, the samples consisting of two emissive materials revealed the best CIE coordinate and the best EQE in different structures. The best CIE coordinate of (0.33, 0.36 was observed by changing the thicknesses of the stacked active layers. The best EQE was 9.73%, which was observed in the sample consisting of different thickness of stacked active layers.

Quasilinear Carbon Transport In An Impurity Hole Plasma In LHD

Energy Technology Data Exchange (ETDEWEB)

Mikkelsen, David R. [PPPL; Tanaka, K. [NIFS; Nunami, M. [NIFS; Watanabe, T-H. [Nagoya University; Sugama, H. [NIFS; Yoshinuma, M. [NIFS; Suzuki, Y. [NIFS; Goto, M. [NIFS; Morita, S. [NIFS; Wieland, B. [NIFS; Yamada, I. [NIFS; Yashura, R. [NIFS; Akiyama, T. [NIFS; Pablant, Novimir A. [PPPL

2014-04-01

Comprehensive electrostatic gyrokinetic linear stability calculations for ion-scale microinstabilities in an LHD plasma with an ion-ITB and carbon "impurity hole" are used to make quasilinear estimates of particle flux to explore whether microturbulence can explain the observed outward carbon fluxes that flow "up" the impurity density gradient. The ion temperature is not stationary in the ion-ITB phase of the simulated discharge, during which the core carbon density decreases continuously. To fully sample these varying conditions the calculations are carried out at three radial locations and four times. The plasma parameter inputs are based on experimentally measured profiles of electron and ion temperature, as well as electron and carbon density. The spectroscopic line-average ratio of hydrogen and helium densities is used to set the density of these species. Three ion species (H,He,C) and the electrons are treated kinetically, including collisions. Electron instability drive does enhance the growth rate significantly, but the most unstable modes have characteristics of ion temperature gradient (ITG) modes in all cases. As the carbon density gradient is scanned between the measured value and zero, the quasilinear carbon flux is invariably inward when the carbon density profile is hollow, so turbulent transport due to the instabilities considered here does not explain the observed outward flux of impurities in impurity hole plasmas. The stiffness of the quasilinear ion heat flux is found to be 1.7-2.3, which is lower than several estimates in tokamaks.

Modeling for copper transport within the boundary layer in an electrodialysis cell

International Nuclear Information System (INIS)

Ibanez, J. P.; Aracena, A.; Ipinza, J.; Cifuentes, L.

2004-01-01

A semi empirical model was developed to characterize the transport of cupric ions within the Nernst layer generated between electrolyte bulk and the membrane surface in an electrodialysis cell. The model was derived from fundamental equations and was reduced to a linear expression incorporating the cupric ion transport number in the Nernst layer (t+BL) and in the membrane (t+m). The model critical condition is t+BL <0.5 t+m. The model correctly fits the experimental data when t+BL is o.02. the model was validated with experimental results previously published by the authors and it accounts for a linear concentration gradient within the Nernst layer. (Author) 28 refs

Predictions of tracer transport in interwell tracer tests at the C-Hole complex. Yucca Mountain site characterization project report milestone 4077

International Nuclear Information System (INIS)

Reimus, P.W.

1996-09-01

This report presents predictions of tracer transport in interwell tracer tests that are to be conducted at the C-Hole complex at the Nevada Test Site on behalf of the Yucca Mountain Site Characterization Project. The predictions are used to make specific recommendations about the manner in which the tracer test should be conducted to best satisfy the needs of the Project. The objective of he tracer tests is to study flow and species transport under saturated conditions in the fractured tuffs near Yucca Mountain, Nevada, the site of a potential high-level nuclear waste repository. The potential repository will be located in the unsaturated zone within Yucca Mountain. The saturated zone beneath and around the mountain represents the final barrier to transport to the accessible environment that radionuclides will encounter if they breach the engineered barriers within the repository and the barriers to flow and transport provided by the unsaturated zone. Background information on the C-Holes is provided in Section 1.1, and the planned tracer testing program is discussed in Section 1.2

Study of the pore filling fraction of carbazole-based hole-transporting materials in solid-state dye-sensitized solar cells

Directory of Open Access Journals (Sweden)

Marwa Ben Manaa

2016-07-01

Full Text Available Carbazole-based molecular glasses have emerged as a promising alternative to the widely used hole-transporting materials (HTM spiro-OMeTAD in solid-state dye-sensitized solar cells (DSSCs. The pore filling fraction (PFF of the mesoporous TiO2 layer by the HTM appears as a key parameter determining the final efficiency of a DSSC. In this work, the pore-filling properties of a family of carbazole-based HTMs are investigated for the first time and the photovoltaic behavior of DSSC devices (fabricated using the D102 dye is discussed in light of the present findings. It is found that N-aryl substituted 3,6-bis(diphenylaminyl-carbazole derivatives exhibit relatively low PFF of ca. 60%. Methoxy groups on the diphenylamine moieties have little influence on the PFF, indicating that the strong enhancement in power conversion efficiency (PCE is not related to an improved filling of the pores by the HTM. N-alkylated HTMs lead to higher PFF, increasing with the alkyl chain length, up to 78%.

Air Stable Photovoltaic Device

DEFF Research Database (Denmark)

2010-01-01

O; (d) heating the bulk heterojunction layer to cleave the thermally cleavable groups to produce an insoluble hole containing polymer; (e) providing the bulk heterojunction layer with a hole transporting layer; and (f) providing the hole transporting layer with a second electrode. Also a conducting...

Two-dimensional carbon crystals. Electrical transport in single- and double-layer graphene; Zweidimensionale Kohlenstoffkristalle. Elektrischer Transport in Einzel- und Doppellagen-Graphen

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Hennrik

2012-02-03

In his work atomically thin layers of carbon, socalled graphene, are investigated. These systems exhibit outstanding electronic properties which are analysed using magnetotransport measurements. For this purpose, different types of samples are prepared, analysed and discussed. In addition to conventional single layer and single crystal bilayer systems, folded flakes with twisted planes are examined. Since monolayer graphene is a two dimensional crystal in which every atom sits at the surface, it is very sensitive to any type of perturbation. Three different cases are investigated: Firstly, dopants are removed from the surface and the change in transport properties is monitored. Secondly, the regime of small carrier concentrations is used to observe field induced recharging of inhomogeneities. Thirdly, an atomic force microscope is used to alter the graphene itself in a defined region. The implications of this modification are again investigated using magnetotransport measurements. The influence of one layer on another one is studied in decoupled two layer samples. A folded sample with separatly contacted layers is used to show transport through the folded region. For jointly contacted layers parallel transport measurements are performed to analyse screening effects of an applied electric field and substrate influence. The interaction of the two layers is shown by a significant reduction of the Fermivelocity.

High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

Energy Technology Data Exchange (ETDEWEB)

Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

2014-03-03

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

Multifunctional Inverse Opal-Like TiO2 Electron Transport Layer for Efficient Hybrid Perovskite Solar Cells.

Science.gov (United States)

Chen, Xiao; Yang, Shuang; Zheng, Yi Chu; Chen, Ying; Hou, Yu; Yang, Xiao Hua; Yang, Hua Gui

2015-09-01

A novel multifunctional inverse opal-like TiO 2 electron transport layer (IOT-ETL) is designed to replace the traditional compact layer and mesoporous scaffold layer in perovskite solar cells (PSCs). Improved light harvesting efficiency and charge transporting performance in IOT-ETL based PSCs yield high power conversion efficiency of 13.11%.

Minimum entropy principle-based solar cell operation without a pn-junction and a thin CdS layer to extract the holes from the emitter

Science.gov (United States)

Böer, Karl W.

2016-10-01

The solar cell does not use a pn-junction to separate electrons from holes, but uses an undoped CdS layer that is p-type inverted when attached to a p-type collector and collects the holes while rejecting the backflow of electrons and thereby prevents junction leakage. The operation of the solar cell is determined by the minimum entropy principle of the cell and its external circuit that determines the electrochemical potential, i.e., the Fermi-level of the base electrode to the operating (maximum power point) voltage. It leaves the Fermi level of the metal electrode of the CdS unchanged, since CdS does not participate in the photo-emf. All photoelectric actions are generated by the holes excited from the light that causes the shift of the quasi-Fermi levels in the generator and supports the diffusion current in operating conditions. It is responsible for the measured solar maximum power current. The open circuit voltage (Voc) can approach its theoretical limit of the band gap of the collector at 0 K and the cell increases the efficiency at AM1 to 21% for a thin-film CdS/CdTe that is given as an example here. However, a series resistance of the CdS forces a limitation of its thickness to preferably below 200 Å to avoid unnecessary reduction in efficiency or Voc. The operation of the CdS solar cell does not involve heated carriers. It is initiated by the field at the CdS/CdTe interface that exceeds 20 kV/cm that is sufficient to cause extraction of holes by the CdS that is inverted to become p-type. Here a strong doubly charged intrinsic donor can cause a negative differential conductivity that switches-on a high-field domain that is stabilized by the minimum entropy principle and permits an efficient transport of the holes from the CdTe to the base electrode. Experimental results of the band model of CdS/CdTe solar cells are given and show that the conduction bands are connected in the dark, where the electron current must be continuous, and the valence bands are

Application of dopant-free hole transport materials for perovskite solar cells

International Nuclear Information System (INIS)

Franckevincius, M.; Gulbinas, V.; Gratzel, M.; Zakeeruddin, S.; Pauerle, P.; Mishra, A.; Steck, C.

2015-01-01

In this work we present the synthesis, characterization and application of a series of additive and dopant free hole transport materials (HTM) for solid-state perovskite-based solar cells. Newly synthesized HTMs showed strong absorption in the visible spectral range and suitable HOMO-LUMO energy levels for the application for methylammonium lead(II) iodide (CH_3NH_3PbI_3) perovskite. Dopant-free perovskite solar cells have been fabricated using CH_3NH_3PbI_3 perovskite and the newly synthesized HTMs following sequential deposition method, which allows us to reach power conversion efficiencies as high as 11.4 %. The easy of synthesis, low cost and relatively high performance of newly synthesized HTMs has great prospects for commercial applications in the near-future. (authors)

A simple model for normal state in- and out-of-plane resistivities of hole doped cuprates

Energy Technology Data Exchange (ETDEWEB)

Naqib, S.H., E-mail: shnaqib.physicsru@gmail.com [Department of Physics, University of Rajshahi, Rajshahi 6205 (Bangladesh); Azam, M. Afsana [Department of Physics, University of Rajshahi, Rajshahi 6205 (Bangladesh); Department of Physics, DUET, Gazipur, Dhaka (Bangladesh); Uddin, M. Borhan [Department of Physics, University of Rajshahi, Rajshahi 6205 (Bangladesh); Department of CSE, International Islamic University Chittagong, Sitakunda, IIUC Rd, Kumira 4314 Bangladesh (Bangladesh); Cole, J.R. [Cambridge Flow Solutions Ltd., Histon, Cambridge CB24 9AD (United Kingdom)

2016-05-15

Highlights: • In- and out-of-plane charge transport have been investigated for hole doped cuprates. • Effect of quantum critical point (QCP) on non-Fermi liquid behavior has been explored. • The impact of pseudogap (PG) on carrier scattering rate has been studied. • In- and out-of plane resistivities have been modeled by considering the QCP and the PG. • The model explains the non-Fermi liquid charge transport in hole doped cuprates. - Abstract: The highly anisotropic and qualitatively different nature of the normal state in- and out-of-plane charge dynamics in high-T{sub c} cuprates cannot be accommodated within the conventional Boltzmann transport theory. The variation of in-plane and out-of-plane resistivities with temperature and hole content are anomalous and cannot be explained by Fermi-liquid theory. In this study, we have proposed a simple phenomenological model for the dc resistivity of cuprates by incorporating two firmly established generic features of all hole doped cuprate superconductors—(i) the pseudogap in the quasiparticle energy spectrum and (ii) the T-linear resistivity at high temperatures. This T-linear behavior over an extended temperature range can be attributed to a quantum criticality, affecting the electronic phase diagram of cuprates. Experimental in-plane and out-of-plane resistivities (ρ{sub p}(T) and ρ{sub c}(T), respectively) of double-layer Y(Ca)123 have been analyzed using the proposed model. This phenomenological model describes the temperature and the hole content dependent resistivity over a wide range of temperature and hole content, p. The characteristic PG energy scale, ε{sub g}(p), extracted from the analysis of the resistivity data, agrees quite well with those found in variety of other experiments. Various other extracted parameters from the analysis of ρ{sub p}(T) and ρ{sub c}(T) data showed systematic trends with changing hole concentration. We have discussed important features found from the analysis in

Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature

KAUST Repository

Pattanasattayavong, Pichaya; Ndjawa, Guy Olivier Ngongang; Zhao, Kui; Chou, Kang Wei; Yaacobi-Gross, Nir; O'Regan, Brian C.; Amassian, Aram; Anthopoulos, Thomas D.

2013-01-01

The optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.

Numerical study of the particle transport in fast neutron detectors with conversion layer

International Nuclear Information System (INIS)

Sedlackova, K.; Zatko, B.; Necas, V.

2012-01-01

This paper deals with fast neutron and recoil proton transport simulation using statistical analysis of Monte Carlo radiation transport code (MCNPX). Its possibilities in the detector design and optimization are presented. MCNPX proved as a very advantageous self-contained simulation program for fast neutron and secondary proton tracking. Simulations of respective particle transport through conversion layer of HDPE and further in the active volume of detector let us to follow important characteristics as neutron/proton flux density, reaction rate of elastic scattering on hydrogen nuclei and deposited energy as well as their dependencies on incident neutron energy and conversion layer/active region thickness. The efficiency of neutrons to protons conversion has been calculated and its maximum was reached for 500 μm thick conversion layer. The minimum active region thickness has been estimated to be about 300 μm.(authors)

On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Ke, Cangming; Sahraei, Nasim; Aberle, Armin G. [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Stangl, Rolf [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); Peters, Ian Marius

2015-06-28

A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t{sup +}-i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlO{sub x}) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlO{sub x} parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t{sup +}-i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm{sup 2}, according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed.

On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

International Nuclear Information System (INIS)

Ke, Cangming; Sahraei, Nasim; Aberle, Armin G.; Stangl, Rolf; Peters, Ian Marius

2015-01-01

A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t + -i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlO x ) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlO x parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t + -i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm 2 , according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao

2017-04-12

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

KAUST Repository

Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlö gl, Udo; Huang, Wei

2017-01-01

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

Science.gov (United States)

Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

2014-09-01

Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm2/V s. The unidirectional shift of turn-on voltage (Von) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (VP/VE) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm2/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the VP/VE of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional Von shift. As a result, an enlarged memory window of 28.6 V at the VP/VE of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

Interface modification of organic photovoltaics by combining molybdenum oxide (MoO{sub x}) and molecular template layer

Energy Technology Data Exchange (ETDEWEB)

Duan, Haichao [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Yang, Junliang, E-mail: junliang.yang@csu.edu.cn [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Fu, Lin; Xiong, Jian; Yang, Bingchu; Ouyang, Jun; Zhou, Conghua; Huang, Han [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Gao, Yongli [Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 (United States)

2015-01-01

We report discrete heterojunction small molecular organic photovoltaics (OPVs) with enhanced performance by modifying the interface using molybdenum oxide (MoO{sub x}) and molecular template layer perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride (PTCDA). A large increase in open-circuit voltage was obtained in copper phthalocyanine/fullerene, i.e., CuPc/C{sub 60} and CuPc/PCBM, discrete planar heterojunction photovoltaics with an insertion of 5 nm MoO{sub x} hole transport layer at the interface between the anode electrode and the CuPc donor layer. It results from the band bending at the interface and the pinning of the highest occupied molecular orbital level of CuPc to the Fermi level of MoO{sub x} due to the defect states (oxygen vacancies) in MoO{sub x} thin films. Moreover, the short-circuit current showed an efficient improvement by inserting a 1 nm PTCDA layer at the interface between the MoO{sub x} layer and the CuPc layer. The PTCDA layer induces the growth of CuPc thin film with lying-down molecular arrangement, supporting the charge transports along the vertical direction. The power conversion efficiencies of CuPc/C{sub 60} and CuPc/PCBM discrete planar heterojunction photovoltaic devices were improved from about 0.80% to 1.50% with inserting both MoO{sub x} and PTCDA layers. The results suggest that the performance of organic discrete planar heterojunction photovoltaics could be optimized by interface modification with combining hole transport layer and molecular template layer, which are potentially suitable for other highly efficient OPVs, such as small molecular tandem OPVs. - Highlights: • Organic small molecule photovoltaics were fabricated by interface modification. • An inserted molybdenum oxide layer largely enhances open-circuit voltage. • An inserted molecular template layer dramatically improves short-circuit current. • The power conversion efficiencies are almost doubled with interface modification.

Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer.

Science.gov (United States)

Sanchez-Yamagishi, Javier D; Luo, Jason Y; Young, Andrea F; Hunt, Benjamin M; Watanabe, Kenji; Taniguchi, Takashi; Ashoori, Raymond C; Jarillo-Herrero, Pablo

2017-02-01

Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics. Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron-hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong non-local transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Unlike other approaches used for realizing helical states, the graphene electron-hole bilayer can be used to build new 1D systems incorporating fractional edge states. Indeed, we are able to tune the bilayer devices into a regime hosting fractional and integer edge states of opposite chiralities, paving the way towards 1D helical conductors with fractional quantum statistics.

A comparative study on the performance of hybrid solar cells containing ZnSTe QDs in hole transporting layer and photoactive layer

Energy Technology Data Exchange (ETDEWEB)

Najeeb, Mansoor Ani [Qatar University, Center for Advanced Materials (CAM) (Qatar); Abdullah, Shahino Mah; Aziz, Fakhra [University of Malaya, Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science (Malaysia); Ahmad, Zubair, E-mail: zubairtarar@qu.edu.qa; Shakoor, R. A. [Qatar University, Center for Advanced Materials (CAM) (Qatar); Mohamed, A. M. A. [Suez University, Department of Metallurgical and Materials Engineering, Faculty of Petroleum and Mining Engineering (Egypt); Khalil, Uzma [University of Peshawar, Department of Electronics, Jinnah College for Women (Pakistan); Swelm, Wageh; Al-Ghamdi, Ahmed A. [King Abdulaziz University, Department of Physics, Faculty of Science (Saudi Arabia); Sulaiman, Khaulah [University of Malaya, Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science (Malaysia)

2016-12-15

In this paper, ZnSTe quantum dots-based hybrid solar cells (HSC) with two different device architectures have been investigated. The improved performance of the poly(3-hexylthiophene) (P3HT) and [6,6]phenyl C{sub 71} butyric acid methyl ester (PC{sub 71}BM)-based bulk heterojunction (BHJ) solar cells by the incorporation of ZnSTe quantum dots (QDs) with an average size of 2.96 nm in PEDOT:PSS layer and active layer that have been demonstrated. Although the efficiency of both types of devices is almost the same, a close comparison reveals different reasons behind their improved performance. The device prepared with QDs in the HTL has shown reduced series resistance, increased shunt resistance, and improved mobility. On the other hand, QDs in the photoactive layer demonstrates increased photo-generation leading to improved efficiency.

Spectroelectrochemical evidence for the effect of phase structure and interface on charge behavior in poly(3-hexylthiophene): Fullerene active layer

International Nuclear Information System (INIS)

Hu, Rong; Ni, Haitao; Wang, Zhaodong; Liu, Yurong; Liu, Hongdong; Yang, Xin; Cheng, Jiang

2016-01-01

Highlights: • The steady-state absorption spectra of P3HT"·"+, P3HT"·"−, PCBM"+ and PCBM"− were obtained. • The effect of morphology of active layer on charge generation was identified. • Non-equilibrium transport of electron and hole was confirmed in PSCs. - Abstract: To investigate the correlation between morphology of active layer and performance of polymer solar cells (PSCs). Poly(3-hexylthiophene):[6,6]-phenyl-C_6_1-butyric acid methyl ester (P3HT:PCBM) were selected as research object and five PSCs based on active layers with varied morphology were fabricated. The results showed that P3HT crystalline phase and donor-acceptor (D-A) interface had an important influence on PSCs performance, which was revealed by structure characterization and J-V measurement. To further understanding the effect of phase structure and D-A interface on charge behavior. Spectroelectrochemistry measurement (SEC) was performed to characterize the steady-state optical absorption of P3HT, PCBM cation and anion in varied active layers, and the spectra difference of cations and anions was analyzed. The results were found that D-A interface could promote charge generation. P3HT crystalline phase and PCBM aggregation phase were beneficial for improving the charge transport ability. Meanwhile, the non-equilibrium transport of electron and hole in PSCs was corroborated by SEC.

Recent advances in small molecular, non-polymeric organic hole transporting materials for solid-state DSSC

Directory of Open Access Journals (Sweden)

Bui Thanh-Tuan

2013-10-01

Full Text Available Issue from thin-film technologies, dye-sensitized solar cells have become one of the most promising technologies in the field of renewable energies. Their success is not only due to their low weight, the possibility of making large flexible surfaces, but also to their photovoltaic efficiency which are found to be more and more significant (>12% with a liquid electrolyte, >7% with a solid organic hole conductor. This short review highlights recent advances in the characteristics and use of low-molecular-weight glass-forming organic materials as hole transporters in all solid-state dye-sensitized solar cells. These materials must feature specific physical and chemical properties that will ensure both the operation of a photovoltaic cell and the easy implementation. This review is an english extended version based on our recent article published in Matériaux & Techniques 101, 102 (2013.

Improving the color purity and efficiency of blue organic light-emitting diodes (BOLED) by adding hole-blocking layer

International Nuclear Information System (INIS)

Huang, C.J.; Kang, C.C.; Lee, T.C.; Chen, W.R.; Meen, T.H.

2009-01-01

This work demonstrates the fabrication of a bright blue organic light-emitting diode (BOLED) with good color purity using 4,4'-bis(2,2-diphenylvinyl)-1,1'-biphenyl (DPVBi) and bathocuproine (BCP) as the emitting layer (EML) and the hole-blocking layer (HBL), respectively. Devices were prepared by vacuum deposition on indium tin oxide (ITO)-glass substrates. The thickness of DPVBi used in the OLED has an important effect on color and efficiency. The blue luminescence is maximal at 7670 cd/m 2 when 13 V is applied and the BCP thickness is 2 nm. The CIE coordinate at a luminance of 7670 cd/m 2 is (0.165, 0.173). Furthermore, the current efficiency is maximum at 4.25 cd/A when 9 V is applied.

Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

Directory of Open Access Journals (Sweden)

Amann Andreas

2011-01-01

Full Text Available Abstract Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range.

Efficiency improvement of flexible fluorescent and phosphorescent organic light emitting diodes by inserting a spin-coating buffer layer

International Nuclear Information System (INIS)

Tsai, Yu-Sheng; Wang, Shun-Hsi; Chen, Shen-Yaur; Su, Shin-Yuan; Juang, Fuh-Shyang

2009-01-01

We dissolved hole transport materials α-NPD and NPB in THF solvent, and spin-coated the α-NPD + THF or NPB + THF solution onto ITO anode surface to improve the luminance efficiency and lifetime of flexible fluorescent and phosphorescent organic light emitting diodes. Then the BCP and TPBi were employed as hole blocking layer (HBL) of phosphorescent device and its thickness was optimized. From the experimental results, the maximum luminance efficiency is 4.4 cd/A at 9 V of fluorescent device and 24.4 cd/A of phosphorescent device, respectively. Such an improvement in the device performance was attributed to the smoother surface and good contact between the interface of spin-coated HTL/ITO, the hole were effectively injected from the anode into the organic layer. And the deposited HTL can block excitons from diffusing into the anode to quench, thus improving the luminance efficiency and lifetime greatly.

Organic-Inorganic Hybrid Interfacial Layer for High-Performance Planar Perovskite Solar Cells.

Science.gov (United States)

Yang, Hao; Cong, Shan; Lou, Yanhui; Han, Liang; Zhao, Jie; Sun, Yinghui; Zou, Guifu

2017-09-20

4,7-Diphenyl-1,10-phenanthroline (Bphen) is an efficient electron transport and hole blocking material in organic photoelectric devices. Here, we report cesium carbonate (Cs 2 CO 3 ) doped Bphen as cathode interfacial layer in CH 3 NH 3 PbI 3-x Cl x based planar perovskite solar cells (PSCs). Investigation finds that introducing Cs 2 CO 3 suppresses the crystallization of Bphen and benefits a smooth interface contact between the perovskite and electrode, resulting in the decrease in carrier recombination and the perovskite degradation. In addition, the matching energy level of Bphen film in the PSCs effectively blocks the holes diffusion to cathode. The resultant power conversion efficiency (PCE) achieves as high as 17.03% in comparison with 12.67% of reference device without doping. Besides, experiments also demonstrate the stability of PSCs have large improvement because the suppressed crystallization of Bphen by doping Cs 2 CO 3 as a superior barrier layer blocks the Ag atom and surrounding moisture access to the vulnerable perovskite layer.

Magneto-transport properties of a random distribution of few-layer graphene patches

International Nuclear Information System (INIS)

Iacovella, Fabrice; Mitioglu, Anatolie; Pierre, Mathieu; Raquet, Bertrand; Goiran, Michel; Plochocka, Paulina; Escoffier, Walter; Trinsoutrot, Pierre; Vergnes, Hugues; Caussat, Brigitte; Conédéra, Véronique

2014-01-01

In this study, we address the electronic properties of conducting films constituted of an array of randomly distributed few layer graphene patches and investigate on their most salient galvanometric features in the moderate and extreme disordered limit. We demonstrate that, in annealed devices, the ambipolar behaviour and the onset of Landau level quantization in high magnetic field constitute robust hallmarks of few-layer graphene films. In the strong disorder limit, however, the magneto-transport properties are best described by a variable-range hopping behaviour. A large negative magneto-conductance is observed at the charge neutrality point, in consistency with localized transport regime

3,6-Carbazole vs 2,7-carbazole: A comparative study of hole-transporting polymeric materials for inorganic–organic hybrid perovskite solar cells

Directory of Open Access Journals (Sweden)

Wei Li

2016-07-01

Full Text Available The ever increasing demand for clean energy has encouraged researchers to intensively investigate environmentally friendly photovoltaic devices. Inorganic–organic hybrid perovskite solar cells (PSCs are very promising due to their potentials of easy fabrication processes and high power conversion efficiencies (PCEs. Designing hole-transporting materials (HTMs is one of the key factors in achieving the high PCEs of PSCs. We now report the synthesis of two types of carbazole-based polymers, namely 3,6-Cbz-EDOT and 2,7-Cbz-EDOT, by Stille polycondensation. Despite the same chemical composition, 3,6-Cbz-EDOT and 2,7-Cbz-EDOT displayed different optical and electrochemical properties due to the different connectivity mode of the carbazole unit. Therefore, their performances as hole-transporting polymeric materials in the PSCs were also different. The device based on 2,7-Cbz-EDOT showed better photovoltaic properties with the PCE of 4.47% than that based on 3,6-Cbz-EDOT. This could be due to its more suitable highest occupied molecular orbital (HOMO level and higher hole mobility.

3,6-Carbazole vs 2,7-carbazole: A comparative study of hole-transporting polymeric materials for inorganic-organic hybrid perovskite solar cells.

Science.gov (United States)

Li, Wei; Otsuka, Munechika; Kato, Takehito; Wang, Yang; Mori, Takehiko; Michinobu, Tsuyoshi

2016-01-01

The ever increasing demand for clean energy has encouraged researchers to intensively investigate environmentally friendly photovoltaic devices. Inorganic-organic hybrid perovskite solar cells (PSCs) are very promising due to their potentials of easy fabrication processes and high power conversion efficiencies (PCEs). Designing hole-transporting materials (HTMs) is one of the key factors in achieving the high PCEs of PSCs. We now report the synthesis of two types of carbazole-based polymers, namely 3,6-Cbz-EDOT and 2,7-Cbz-EDOT, by Stille polycondensation. Despite the same chemical composition, 3,6-Cbz-EDOT and 2,7-Cbz-EDOT displayed different optical and electrochemical properties due to the different connectivity mode of the carbazole unit. Therefore, their performances as hole-transporting polymeric materials in the PSCs were also different. The device based on 2,7-Cbz-EDOT showed better photovoltaic properties with the PCE of 4.47% than that based on 3,6-Cbz-EDOT. This could be due to its more suitable highest occupied molecular orbital (HOMO) level and higher hole mobility.

Charge-carrier transport in epitactical strontium titanate layers for the application in superconducting components

International Nuclear Information System (INIS)

Grosse, Veit

2011-01-01

In this thesis thin STO layers were epitactically deposited on YBCO for a subsequent electrical characterization. YBCO layers with a roughness of less than 2 nm (RMS), good out-of-plane orientation with a half-width in the rocking curve in the range (0.2..0.3) at only slightly diminished critical temperature could be reached. The STO layers exhibited also very good crystallographic properties. The charge-carrier transport in STO is mainly dominated by interface-limited processes. By means of an in thesis newly developed barrier model thereby the measured dependencies j(U,T) respectively σ(U,T) could be described very far-reachingly. At larger layer thicknesses and low temperatures the charge-carrier transport succeeds by hopping processes. So in the YBCO/STO/YBCO system the variable-range hopping could be identified as dominating transport process. Just above U>10 V a new behaviour is observed, which concerning its temperature dependence however is also tunnel-like. The STO layers exhibit here very large resistances, so that fields up to 10 7 ..10 8 V/m can be reached without flowing of significant leakage currents through the barrier. In the system YBCO/STO/Au the current transport can be principally in the same way as in the YBCO/STO/YBCO system. The special shape and above all the asymmetry of the barrier however work out very distinctly. It could be shown that at high temperatures according to the current direction a second barrier on the opposite electrode must be passed. So often observed breakdown effects can be well described. For STO layer-thicknesses in the range around 25 nm in the whole temperature range studied inelastic tunneling over chains of localized states was identified as dominating transport process. It could however for the first time be shown that at very low temperatures in the STO layers Coulomb blockades can be formed.

Effects of pilot holes on longitudinal miniscrew stability and bony adaptation.

Science.gov (United States)

Carney, Lauren Ohlenforst; Campbell, Phillip M; Spears, Robert; Ceen, Richard F; Melo, Ana Cláudia; Buschang, Peter H

2014-11-01

The purposes of this study were to longitudinally evaluate the effects of pilot holes on miniscrew implant (MSI) stability and to determine whether the effects can be attributed to the quality or the quantity of bone surrounding the MSI. Using a randomized split-mouth design in 6 skeletally mature female foxhound-mix dogs, 17 MSIs (1.6 mm outer diameter) placed with pilot holes (1.1 mm) were compared with 17 identical MSIs placed without pilot holes. Implant stability quotient measurements of MSI stability were taken weekly for 7 weeks. Using microcomputed tomography with an isotropic resolution of 6 μm, bone volume fractions were measured for 3 layers of bone (6-24, 24-42, and 42-60 μm) surrounding the MSIs. At placement, the MSIs with pilot holes showed significantly (P holes (48.3 vs 47.5). Over time, the implant stability quotient values decreased significantly more for the MSIs placed with pilot holes than for those placed without pilot holes. After 7 weeks, the most coronal aspect of the 6- to 24-μm layer of cortical bone and the most coronal aspects of all 3 layers of trabecular bone showed significantly larger bone volume fractions for the MSIs placed without pilot holes than for those placed with pilot holes. MSIs placed with pilot holes show greater primary stability, but greater decreases in stability over time, due primarily to having less trabecular bone surrounding them. Copyright © 2014 American Association of Orthodontists. Published by Elsevier Inc. All rights reserved.

Liquid water transport mechanism in the gas diffusion layer

Energy Technology Data Exchange (ETDEWEB)

Zhou, P.; Wu, C.W. [State Key Laboratory of Structure Analysis for Industrial Equipment, Department of Engineering Mechanics, Faculty of Vehicle Engineering and Mechanics, Dalian University of Technology, Dalian 116024 (China)

2010-03-01

We developed an equivalent capillary model of a microscale fiber-fence structure to study the microscale evolution and transport of liquid in a porous media and to reveal the basic principles of water transport in gas diffusion layer (GDL). Analytical solutions using the model show that a positive hydraulic pressure is needed to drive the liquid water to penetrate through the porous GDL even consisting of the hydrophilic fibers. Several possible contributions for the water configuration, such as capillary pressure, gravity, vapor condensation, wettability and microstructures of the GDL, are discussed using the lattice Boltzmann method (LBM). It is found that the distribution manners of the fibers and the spatial mixed-wettability in the GDL also play an important role in the transport of liquid water. (author)

Characterization of the hole transport and electrical properties in poly(9,9-dioctylfluorene)

International Nuclear Information System (INIS)

Wang, L.G.; Zhang, H.W.; Tang, X.L.; Song, Y.Q.

2011-01-01

A systematic study of the hole transport and electrical properties in blue-emitting polymers as poly(9,9-dioctylfluorene) (PFO) has been performed. We show that the temperature dependent and thickness dependent current density versus voltage characteristics of PFO hole-only devices can be accurately described using our recently introduced improved mobility model based on both the Arrhenius temperature dependence and non-Arrhenius temperature dependence. Within the improved model, the mobility depends on three important physical quantities: temperature, carrier density, and electric field. For the polymer studied, we find the width of the density of states σ=0.115 eV and the lattice constant a=1.2 nm. Furthermore, we show that the boundary carrier density has an important effect on the current density versus voltage characteristics. Too large or too small values of the boundary carrier density lead to incorrect current density versus voltage characteristics. The numerically calculated carrier density is a decreasing function of distance from the interface. The numerically calculated electric field is an increasing function of distance. Both the maximum of carrier density and minimum of electric field appear near the interface.

Ultrathin nondoped emissive layers for efficient and simple monochrome and white organic light-emitting diodes.

Science.gov (United States)

Zhao, Yongbiao; Chen, Jiangshan; Ma, Dongge

2013-02-01

In this paper, highly efficient and simple monochrome blue, green, orange, and red organic light emitting diodes (OLEDs) based on ultrathin nondoped emissive layers (EMLs) have been reported. The ultrathin nondoped EML was constructed by introducing a 0.1 nm thin layer of pure phosphorescent dyes between a hole transporting layer and an electron transporting layer. The maximum external quantum efficiencies (EQEs) reached 17.1%, 20.9%, 17.3%, and 19.2% for blue, green, orange, and red monochrome OLEDs, respectively, indicating the universality of the ultrathin nondoped EML for most phosphorescent dyes. On the basis of this, simple white OLED structures are also demonstrated. The demonstrated complementary blue/orange, three primary blue/green/red, and four color blue/green/orange/red white OLEDs show high efficiency and good white emission, indicating the advantage of ultrathin nondoped EMLs on constructing simple and efficient white OLEDs.

New regular black hole solutions

International Nuclear Information System (INIS)

Lemos, Jose P. S.; Zanchin, Vilson T.

2011-01-01

In the present work we consider general relativity coupled to Maxwell's electromagnetism and charged matter. Under the assumption of spherical symmetry, there is a particular class of solutions that correspond to regular charged black holes whose interior region is de Sitter, the exterior region is Reissner-Nordstroem and there is a charged thin-layer in-between the two. The main physical and geometrical properties of such charged regular black holes are analyzed.

A New Model of Black Hole Formation

Directory of Open Access Journals (Sweden)

Thayer G. D.

2013-10-01

Full Text Available The formation of a black hole and its event horizon are described. Conclusions, which are the result of a thought experiment, show that Schwarzschild [1] was correct: A singularity develops at the event horizon of a newly-formed black hole. The intense gravitational field that forms near the event horizon results in the mass-energy of the black hole accumulating in a layer just inside the event horizon, rather than collapsing into a central singularity.

Magnonic Black Holes.

Science.gov (United States)

Roldán-Molina, A; Nunez, Alvaro S; Duine, R A

2017-02-10

We show that the interaction between the spin-polarized current and the magnetization dynamics can be used to implement black-hole and white-hole horizons for magnons-the quanta of oscillations in the magnetization direction in magnets. We consider three different systems: easy-plane ferromagnetic metals, isotropic antiferromagnetic metals, and easy-plane magnetic insulators. Based on available experimental data, we estimate that the Hawking temperature can be as large as 1 K. We comment on the implications of magnonic horizons for spin-wave scattering and transport experiments, and for magnon entanglement.

High efficiency rubrene based inverted top-emission organic light emitting devices with a mixed single layer

International Nuclear Information System (INIS)

Wang, Zhaokui; Lou, Yanhui; Naka, Shigeki; Okada, Hiroyuki

2010-01-01

Inverted top-emission organic light emitting devices (TEOLEDs) with a mixed single layer by mixing of electron transport materials (PyPySPyPy and Alq 3 ), hole transport material (α-NPD) and dope material (rubrene) were investigated. Maximum power efficiency of 3.5 lm/W and maximum luminance of 7000 cd/m 2 were obtained by optimizing the mixing ratio of PyPySPyPy:Alq 3 :α-NPD:rubrene=25:50:25:1. Luminance and power efficiency of mixed single layer device were two times improved compared to bi-layer heterojunction device and tri-layer heterojunction device. Lifetime test also shows that the mixed single layer device exhibits longer operational lifetimes of 343 h, which is three times longer than the 109 h for tri-layer device, and two times longer than the 158 h for bi-layer device. In addition, the maximum luminance and power efficiency were obtained at 20,000 cd/m 2 and 7.5 lm/W, respectively, when a TPD layer of 45 nm was capped onto the top metal electrode.

The Antarctic ozone hole

International Nuclear Information System (INIS)

Jones, Anna E

2008-01-01

Since the mid 1970s, the ozone layer over Antarctica has experienced massive destruction during every spring. In this article, we will consider the atmosphere, and what ozone and the ozone layer actually are. We explore the chemistry responsible for the ozone destruction, and learn about why conditions favour ozone destruction over Antarctica. For the historical perspective, the events leading up to the discovery of the 'hole' are presented, as well as the response from the international community and the measures taken to protect the ozone layer now and into the future

Semianalytical Solutions of Radioactive or Reactive Transport in Variably-Fractured Layered Media: 1. Solutes

International Nuclear Information System (INIS)

George J. Moridis

2001-01-01

In this paper, semianalytical solutions are developed for the problem of transport of radioactive or reactive solute tracers through a layered system of heterogeneous fractured media with misaligned fractures. The tracer transport equations in the non-flowing matrix account for (a) diffusion, (b) surface diffusion, (c) mass transfer between the mobile and immobile water fractions, (d) linear kinetic or equilibrium physical, chemical, or combined solute sorption or colloid filtration, and (e) radioactive decay or first-order chemical reactions. The tracer-transport equations in the fractures account for the same processes, in addition to advection and hydrodynamic dispersion. Any number of radioactive decay daughter products (or products of a linear, first-order reaction chain) can be tracked. The solutions, which are analytical in the Laplace space, are numerically inverted to provide the solution in time and can accommodate any number of fractured and/or porous layers. The solutions are verified using analytical solutions for limiting cases of solute and colloid transport through fractured and porous media. The effect of important parameters on the transport of 3 H, 237 Np and 239 Pu (and its daughters) is investigated in several test problems involving layered geological systems of varying complexity

Near-infrared electroluminescence from double-emission-layers devices based on Ytterbium (III) complexes

International Nuclear Information System (INIS)

Li Zhefeng; Zhang Hongjie; Yu Jiangbo

2012-01-01

We investigated near-infrared electroluminescence properties of two lanthanide complexes Yb(PMBP) 3 Bath [PMBP = tris(1-phenyl-3-methyl-4-(4-tert-butylbenzacyl)-5-pyrazolone); Bath = bathophenanthroline] and Yb(PMIP) 3 TP 2 [PMIP = tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone); TP = triphenyl phosphine oxide] by fabricated the double-emission-layers devices. From the device characteristics, it is known that holes are easier to transport in Yb(PMIP) 3 TP 2 layer and electrons are easier to transport in Yb(PMBP) 3 Bath layer, at the same time, both of the two complexes can be acted as emission layers in the device. The recombination region of carriers has been confined in the interface of Yb(PMIP) 3 TP 2 /Yb(PMBP) 3 Bath, and pure Yb 3+ ion characteristic emission centered at 980 nm has been obtained. The device shows the maximum near-infrared irradiance as 14.7 mW/m 2 at the applied voltage of 17.8 V. - Highlights: ► Near-infrared electroluminescent devices with Yb(III) complexes as emission layers. ► Double-emission layer device structure introduced to balance carriers. ► Improved performance of double-emission layer device.

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

Energy Technology Data Exchange (ETDEWEB)

Doganov, Rostislav A.; Özyilmaz, Barbaros [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore (Singapore); Koenig, Steven P.; Yeo, Yuting [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

2015-02-23

Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

Fabrication of nanostructured ZnO film as a hole-conducting layer of organic photovoltaic cell

Science.gov (United States)

Kim, Hyomin; Kwon, Yiseul; Choe, Youngson

2013-05-01

We have investigated the effect of fibrous nanostructured ZnO film as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the concentration of zinc acetate dihydrate, the changes of performance characteristics were evaluated. Fibrous nanostructured ZnO film was prepared by sol-gel process and annealed on a hot plate. As the concentration of zinc acetate dihydrate increased, ZnO fibrous nanostructure grew from 300 to 600 nm. The obtained ZnO nanostructured fibrous films have taken the shape of a maze-like structure and were characterized by UV-visible absorption, scanning electron microscopy, and X-ray diffraction techniques. The intensity of absorption bands in the ultraviolet region was increased with increasing precursor concentration. The X-ray diffraction studies show that the ZnO fibrous nanostructures became strongly (002)-oriented with increasing concentration of precursor. The bulk heterojunction photovoltaic cells were fabricated using poly(3-hexylthiophene-2,5-diyl) and indene-C60 bisadduct as active layer, and their electrical properties were investigated. The external quantum efficiency of the fabricated device increased with increasing precursor concentration.

En face spectral domain optical coherence tomography analysis of lamellar macular holes.

Science.gov (United States)

Clamp, Michael F; Wilkes, Geoff; Leis, Laura S; McDonald, H Richard; Johnson, Robert N; Jumper, J Michael; Fu, Arthur D; Cunningham, Emmett T; Stewart, Paul J; Haug, Sara J; Lujan, Brandon J

2014-07-01

To analyze the anatomical characteristics of lamellar macular holes using cross-sectional and en face spectral domain optical coherence tomography. Forty-two lamellar macular holes were retrospectively identified for analysis. The location, cross-sectional length, and area of lamellar holes were measured using B-scans and en face imaging. The presence of photoreceptor inner segment/outer segment disruption and the presence or absence of epiretinal membrane formation were recorded. Forty-two lamellar macular holes were identified. Intraretinal splitting occurred within the outer plexiform layer in 97.6% of eyes. The area of intraretinal splitting in lamellar holes did not correlate with visual acuity. Eyes with inner segment/outer segment disruption had significantly worse mean logMAR visual acuity (0.363 ± 0.169; Snellen = 20/46) than in eyes without inner segment/outer segment disruption (0.203 ± 0.124; Snellen = 20/32) (analysis of variance, P = 0.004). Epiretinal membrane was present in 34 of 42 eyes (81.0%). En face imaging allowed for consistent detection and quantification of intraretinal splitting within the outer plexiform layer in patients with lamellar macular holes, supporting the notion that an area of anatomical weakness exists within Henle's fiber layer, presumably at the synaptic connection of these fibers within the outer plexiform layer. However, the en face area of intraretinal splitting did not correlate with visual acuity, disruption of the inner segment/outer segment junction was associated with significantly worse visual acuity in patients with lamellar macular holes.

Semitransparent Flexible Organic Solar Cells Employing Doped-Graphene Layers as Anode and Cathode Electrodes.

Science.gov (United States)

Shin, Dong Hee; Jang, Chan Wook; Lee, Ha Seung; Seo, Sang Woo; Choi, Suk-Ho

2018-01-31

Semitransparent flexible photovoltaic cells are advantageous for effective use of solar energy in many areas such as building-integrated solar-power generation and portable photovoltaic chargers. We report semitransparent and flexible organic solar cells (FOSCs) with high aperture, composed of doped graphene layers, ZnO, P3HT:PCBM, and PEDOT:PSS as anode/cathode transparent conductive electrodes (TCEs), electron transport layer, photoactive layer, and hole transport layer, respectively, fabricated based on simple solution processing. The FOSCs do not only harvest solar energy from ultraviolet-visible region but are also less sensitive to near-infrared photons, indicating semitransparency. For the anode/cathode TCEs, graphene is doped with bis(trifluoromethanesulfonyl)-amide or triethylene tetramine, respectively. Power conversion efficiency (PCE) of 3.12% is obtained from the fundamental FOSC structure, and the PCE is further enhanced to 4.23% by adding an Al reflective mirror on the top or bottom side of the FOSCs. The FOSCs also exhibit remarkable mechanical flexibilities through bending tests for various curvature radii.

Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

International Nuclear Information System (INIS)

Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

2014-01-01

Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm 2 /V s. The unidirectional shift of turn-on voltage (V on ) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V P /V E ) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm 2 /V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V P /V E of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V on shift. As a result, an enlarged memory window of 28.6 V at the V P /V E of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

Improving the color purity and efficiency of blue organic light-emitting diodes (BOLED) by adding hole-blocking layer

Energy Technology Data Exchange (ETDEWEB)

Huang, C.J., E-mail: chien@nuk.edu.t [Department of Applied Physics, National University of Kaohsiung, 700 Kaohsiung University Road, Nan-Tzu, Kaohsiung, Taiwan (China); Kang, C.C. [Department of Electro-Optical Engineering, Southern Taiwan University of Technology, 1 Nan-Tai St., Yung-Kang City, Tainan, Taiwan (China); Lee, T.C. [Department of Electrical Engineering, Southern Taiwan University of Technology, 1 Nan-Tai St., Yung-Kang City, Tainan, Taiwan (China); Chen, W.R.; Meen, T.H. [Department of Electronic Engineering, National Formosa University, 64 Wen-Hwa Road, Hu-Wei, Yunlin, Taiwan (China)

2009-11-15

This work demonstrates the fabrication of a bright blue organic light-emitting diode (BOLED) with good color purity using 4,4'-bis(2,2-diphenylvinyl)-1,1'-biphenyl (DPVBi) and bathocuproine (BCP) as the emitting layer (EML) and the hole-blocking layer (HBL), respectively. Devices were prepared by vacuum deposition on indium tin oxide (ITO)-glass substrates. The thickness of DPVBi used in the OLED has an important effect on color and efficiency. The blue luminescence is maximal at 7670 cd/m{sup 2} when 13 V is applied and the BCP thickness is 2 nm. The CIE coordinate at a luminance of 7670 cd/m{sup 2} is (0.165, 0.173). Furthermore, the current efficiency is maximum at 4.25 cd/A when 9 V is applied.

Global transport and localized layering of metallic ions in the upper atmospherer

Directory of Open Access Journals (Sweden)

L. N. Carter

1999-02-01

Full Text Available A numerical model has been developed which is capable of simulating all phases of the life cycle of metallic ions, and results are described and interpreted herein for the typical case of Fe+ ions. This cycle begins with the initial deposition of metallics through meteor ablation and sputtering, followed by conversion of neutral Fe atoms to ions through photoionization and charge exchange with ambient ions. Global transport arising from daytime electric fields and poleward/ downward di.usion along geomagnetic field lines, localized transport and layer formation through de- scending convergent nulls in the thermospheric wind field, and finally annihilation by chemical neutralization and compound formation are treated. The model thus sheds new light on the interdependencies of the physical and chemical processes a.ecting atmospheric metallics. Model output analysis confirms the dominant role of both global and local transport to the ion's life cycle, showing that upward forcing from the equatorial electric field is critical to global movement, and that diurnal and semidiurnal tidal winds are responsible for the forma- tion of dense ion layers in the 90±250 km height region. It is demonstrated that the assumed combination of sources, chemical sinks, and transport mechanisms actually produces F-region densities and E-region layer densities similar to those observed. The model also shows that zonal and meridional winds and electric fields each play distinct roles in local transport, whereas the ion distribution is relatively insensitive to reasonable variations in meteoric deposition and chemical reaction rates.Key words. Ionosphere (ion chemistry and composition; ionosphere-atmosphere interactions.

Peculiarities of interaction of the p{sub z}-, π- electrons and the σ{sub p}-holes at the top 1–6 layers of HOPG

Energy Technology Data Exchange (ETDEWEB)

Dementjev, A.P., E-mail: demcarbon@yandex.ru; Ivanov, K.E.

2017-03-31

Graphical abstract: The formation of π-bands and σ{sub p}- holes as result of the p{sub z} → π transitions in 2–6 graphene layers HOPG. The valence band spectrum taken from Murday et al. (1981). - Abstract: The present work continues the analysis of results of Dementjev et al. (2015) in order to identify the interlayer interactions of the π-bands. Analysis of the N(E) C KVV Auger spectra of highly-ordered pyro-graphite showed the absence of the electron exchange between the π-bands in 1–6 layers. Since the π-bands are formed by the p{sub z} → π transitions, one can suggest that the π-band occupation at each graphene layer is formed by the p{sub z}-electrons of this layer. Since the p{sub z} electrons belong to the σ{sub p}-bands, the p{sub z} → π transitions in the σ{sub p}-bands in each of 2–6 graphene layers result in formation of holes H, whose concentration is equal to the concentration of electrons in the π-bands [H{sub i}] ≡ [π{sub i}]. This shows the origin of the ambipolar conductivity in graphene. The absence of the electronic interaction between the π-bands allows a suggestion that the interaction between top six graphene layers is due to the van der Waals electrostatic attractive forces. These forces promote the p{sub z} → π transitions in each of the 2–6 graphene layers and depend on the number of graphene layers above. The N(E) C KVV Auger spectra allow identification of number (1–6) of graphene layers and the π-band occupation at each of the layer. For the first time a specification of the van der Waals forces in HOPG was done.

The 2002 Antarctic Ozone Hole

Science.gov (United States)

Newman, P. A.; Nash, E. R.; Douglass, A. R.; Kawa, S. R.

2003-01-01

Since 1979, the ozone hole has grown from near zero size to over 24 Million km2. This area is most strongly controlled by levels of inorganic chlorine and bromine oncentrations. In addition, dynamical variations modulate the size of the ozone hole by either cooling or warming the polar vortex collar region. We will review the size observations, the size trends, and the interannual variability of the size. Using a simple trajectory model, we will demonstrate the sensitivity of the ozone hole to dynamical forcing, and we will use these observations to discuss the size of the ozone hole during the 2002 Austral spring. We will further show how the Cly decreases in the stratosphere will cause the ozone hole to decrease by 1-1.5% per year. We will also show results from a 3-D chemical transport model (CTM) that has been continuously run since 1999. These CTM results directly show how strong dynamics acts to reduce the size of the ozone hole.

A discotic triphenylene dimer as organic hole transporting material for electroluminescence devices

International Nuclear Information System (INIS)

Mao Huaxiang; He Zhiqun; Wang Junling; Zhang Chunxiu; Xie, Ping; Zhang Rongben

2007-01-01

A triphenylene dimer, an intermediate between a discotic triphenylene molecule and the macromolecule, had been prepared by linking together two triphenylene units via phenylene carbamate linkages, which was formed through a reaction between one 1,4-phenylene diisocyanate and two hydroxyl end groups on flexible substituents of triphenylenes. The dimer exhibited good film-forming property. Its temperature-dependent phase transitions were investigated using differential scanning calorimetry and polarized optical microscopy. Room temperature microstructure of the dimer was analyzed by X-ray diffraction. Charge mobility of the triphenylene dimer was also measured. Our preliminary result using the materials in a sandwich light-emitting device is reported here. It demonstrates that the triphenylene dimer is a promising candidate as a hole transporting material

Cross-field blob transport in tokamak scrape-off-layer plasmas

International Nuclear Information System (INIS)

D'Ippolito, D.A.; Myra, J.R.; Krasheninnikov, S.I.

2002-01-01

Recent measurements show that nondiffusive, intermittent transport of particles can play a major role in the scrape-off-layer (SOL) of fusion experiments. A possible mechanism for fast convective plasma transport is related to the plasma filaments or 'blobs' observed in the SOL with fast cameras and probes. In this paper, physical arguments suggesting the importance of blob transport [S. I. Krasheninnikov, Phys. Lett. A 283, 368 (2001)] have been extended by calculations using a three-field fluid model, treating the blobs as coherent propagating structures. The properties of density, temperature and vorticity blobs, and methods of averaging over ensembles of blobs to get the average SOL profiles, are illustrated. The role of ionization of background neutrals in sustaining the density blob transport is also discussed. Many qualitative features of the experiments, such as relatively flat density profiles and transport coefficients increasing toward the wall, are shown to emerge naturally from the blob transport paradigm

Unstirred Water Layers and the Kinetics of Organic Cation Transport

Science.gov (United States)

Shibayama, Takahiro; Morales, Mark; Zhang, Xiaohong; Martinez, Lucy; Berteloot, Alfred; Secomb, Timothy W.; Wright, Stephen H.

2015-01-01

Purpose Unstirred water layers (UWLs) present an unavoidable complication in the measurement of transport kinetics in cultured cells and the high rates of transport achieved by overexpressing heterologous transporters exacerbate the UWL effect. This study examined the correlation between measured Jmax and Kt values and the effect of manipulating UWL thickness or transport Jmax on the accuracy of experimentally determined kinetics of the multidrug transporters, OCT2 and MATE1. Methods Transport of TEA and MPP was measured in CHO cells that stably expressed human OCT2 or MATE1. UWL thickness was manipulated by vigorous reciprocal shaking. Several methods were used to manipulate maximal transport rates. Results Vigorous stirring stimulated uptake of OCT2-mediated transport by decreasing apparent Kt (Ktapp) values. Systematic reduction in transport rates was correlated with reduction in Ktapp values. The slope of these relationships indicated a 1500 µm UWL in multiwell plates. Reducing the influence of UWLs (by decreasing either their thickness or the Jmax of substrate transport) reduced Ktapp by 2-fold to >10-fold. Conclusions Failure to take into account the presence of UWLs in experiments using cultured cells to measure transport kinetics can result in significant underestimates of the affinity of multidrug transporters for substrates. PMID:25791216

Photocurrent Spectroscopy of Perovskite Layers and Solar Cells: A Sensitive Probe of Material Degradation

KAUST Repository

Holovský , Jakub; De Wolf, Stefaan; Werner, Jé ré mie; Remeš, Zdeněk; Mü ller, Martin; Neykova, Neda; Ledinský , Martin; Černá , Ladislava; Hrzina, Pavel; Lö per, Philipp; Niesen, Bjoern; Ballif, Christophe

2017-01-01

Optical absorptance spectroscopy of polycrystalline CHNHPbI films usually indicates the presence of a PbI phase, either as a preparation residue or due to film degradation, but gives no insight on how this may affect electrical properties. Here, we apply photocurrent spectroscopy to both perovskite solar cells and coplanar-contacted layers at various stages of degradation. In both cases, we find that the presence of a PbI phase restricts charge-carrier transport, suggesting that PbI encapsulates CHNHPbI grains. We also find that PbI injects holes into the CHNHPbI grains, increasing the apparent photosensitivity of PbI. This phenomenon, known as modulation doping, is absent in the photocurrent spectra of solar cells, where holes and electrons have to be collected in pairs. This interpretation provides insights into the photogeneration and carrier transport in dual-phase perovskites.

Photocurrent Spectroscopy of Perovskite Layers and Solar Cells: A Sensitive Probe of Material Degradation

KAUST Repository

Holovský, Jakub

2017-01-25

Optical absorptance spectroscopy of polycrystalline CHNHPbI films usually indicates the presence of a PbI phase, either as a preparation residue or due to film degradation, but gives no insight on how this may affect electrical properties. Here, we apply photocurrent spectroscopy to both perovskite solar cells and coplanar-contacted layers at various stages of degradation. In both cases, we find that the presence of a PbI phase restricts charge-carrier transport, suggesting that PbI encapsulates CHNHPbI grains. We also find that PbI injects holes into the CHNHPbI grains, increasing the apparent photosensitivity of PbI. This phenomenon, known as modulation doping, is absent in the photocurrent spectra of solar cells, where holes and electrons have to be collected in pairs. This interpretation provides insights into the photogeneration and carrier transport in dual-phase perovskites.

Impact of Interfacial Layers in Perovskite Solar Cells.

Science.gov (United States)

Cho, An-Na; Park, Nam-Gyu

2017-10-09

Perovskite solar cells (PCSs) are composed of organic-inorganic lead halide perovskite as the light harvester. Since the first report on a long-term-durable, 9.7 % efficient, solid-state perovskite solar cell, organic-inorganic halide perovskites have received considerable attention because of their excellent optoelectronic properties. As a result, a power conversion efficiency (PCE) exceeding 22 % was certified. Controlling the grain size, grain boundary, morphology, and defects of the perovskite layer is important for achieving high efficiency. In addition, interfacial engineering is equally or more important to further improve the PCE through better charge collection and a reduction in charge recombination. In this Review, the type of interfacial layers and their impact on photovoltaic performance are investigated for both the normal and the inverted cell architectures. Four different interfaces of fluorine-doped tin oxide (FTO)/electron-transport layer (ETL), ETL/perovskite, perovskite/hole-transport layer (HTL), and HTL/metal are classified, and their roles are investigated. The effects of interfacial engineering with organic or inorganic materials on photovoltaic performance are described in detail. Grain-boundary engineering is also included because it is related to interfacial engineering and the grain boundary in the perovskite layer plays an important role in charge conduction, recombination, and chargecarrier life time. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

The feasibility of using solution-processed aqueous La2O3 as effective hole injection layer in organic light-emitting diode

Science.gov (United States)

Zhang, Yan; Li, Wanshu; Zhang, Ting; Yang, Bo; Zheng, Qinghong; Xu, Jiwen; Wang, Hua; Wang, Lihui; Zhang, Xiaowen; Wei, Bin

2018-01-01

Low-cost and scalable manufacturing boosts organic electronic devices with all solution process. La2O3 powders and corresponding aqueous solutions are facilely synthesized. Atomic force microscopy and scanning electron microscopy measurements show that solution-processed La2O3 behaves superior film morphology. X-ray diffraction and X-ray photoelectron spectroscopy measurements verify crystal phase and typical La signals. In comparison with the most widely-used hole injection layers (HILs) of MoOx and poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), enhanced luminous efficiency is observed in organic light-emitting diode (OLED) using solution-processed La2O3 HIL. Current-voltage, impedance-voltage and phase angle-voltage transition curves clarify that solution-processed La2O3 behaves nearly comparable hole injection capacity to MoOx and PEDOT:PSS, and favorably tailors carrier balance. Moreover, the hole injection mechanism of solution-processed La2O3 is proven to be predominantly controlled by Fowler-Nordheim tunneling process and the hole injection barrier height between ITO and NPB via La2O3 interlayer is estimated to be 0.098 eV. Our experiments provide a feasible application of La2O3 in organic electronic devices with solution process.

Modeling of 1-D nitrate transport in single layer soils | Dike | Journal ...

African Journals Online (AJOL)

The transport of nitrate in laboratory single soil columns of sand, laterite and clay were investigated after 21 days. The 1-D contaminant transport model by Notodarmojo et al (1991) for single layer soils were calibrated and verified using field data collected from a refuse dump site at avu, owerri, Imo state. The experimental ...

Designing Two-Dimensional Dirac Heterointerfaces of Few-Layer Graphene and Tetradymite-Type Sb2Te3 for Thermoelectric Applications.

Science.gov (United States)

Jang, Woosun; Lee, Jiwoo; In, Chihun; Choi, Hyunyong; Soon, Aloysius

2017-12-06

Despite the ubiquitous nature of the Peltier effect in low-dimensional thermoelectric devices, the influence of finite temperature on the electronic structure and transport in the Dirac heterointerfaces of the few-layer graphene and layered tetradymite, Sb 2 Te 3 (which coincidently have excellent thermoelectric properties) are not well understood. In this work, using the first-principles density-functional theory calculations, we investigate the detailed atomic and electronic structure of these Dirac heterointerfaces of graphene and Sb 2 Te 3 and further re-examine the effect of finite temperature on the electronic band structures using a phenomenological temperature-broadening model based on Fermi-Dirac statistics. We then proceed to understand the underlying charge redistribution process in this Dirac heterointerfaces and through solving the Boltzmann transport equation, we present the theoretical evidence of electron-hole asymmetry in its electrical conductivity as a consequence of this charge redistribution mechanism. We finally propose that the hexagonal-stacked Dirac heterointerfaces are useful as efficient p-n junction building blocks in the next-generation thermoelectric devices where the electron-hole asymmetry promotes the thermoelectric transport by "hot" excited charge carriers.

Transport parameters of thin, supported cathode layers in solid oxide fuel cells (SOFCs); Transportparameter duenner, getraegerter Kathodenschichten der oxidkeramischen Brennstoffzelle

Energy Technology Data Exchange (ETDEWEB)

Wedershoven, Christian

2010-12-22

The aim of this work was to determine the transport properties of thin cathode layers, which are part of the composite layer of a fabricated anode-supported solid oxide fuel cell (SOFC). The transport properties of the anode and cathode have a significant influence on the electrochemical performance of a fuel cell stack and therefore represent an important parameter when designing fuel cell stacks. In order to determine the transport parameters of the cathode layers in a fabricated SOFC, it is necessary to permeate the thin cathode layer deposited on the gas-tight electrolyte with a defined gas transport. These thin cathode layers cannot be fabricated as mechanically stable single layers and cannot therefore be investigated in the diffusion and permeation experiments usually used to determine transport parameters. The setup of these experiments - particularly the sample holder - was therefore altered in this work. The result of this altered setup was a three-dimensional flow configuration. Compared to the conventional setup, it was no longer possible to describe the gas transport in the experiments with an analytical one-dimensional solution. A numerical solution process had to be used to evaluate the measurements. The new setup permitted a sufficiently symmetrical gas distribution and thus allowed the description of the transport to be reduced to a two-dimensional description, which significantly reduced the computational effort required to evaluate the measurements. For pressure-induced transport, a parametrized coherent expression of transport could be derived. This expression is equivalent to the analytical description of the transport in conventional measurement setups, with the exception of parameters that describe the geometry of the gas diffusion. In this case, a numerical process is not necessary for the evaluation. Using the transport parameters of mechanically stable anode substrates, which can be measured both in the old and the new setups, the old and

Self-cleaning effect in high quality percussion ablating of cooling hole by picosecond ultra-short pulse laser

Science.gov (United States)

Zhao, Wanqin; Yu, Zhishui

2018-06-01

Comparing with the trepanning technology, cooling hole could be processed based on the percussion drilling with higher processing efficiency. However, it is widely believed that the ablating precision of hole is lower for percussion drilling than for trepanning, wherein, the melting spatter materials around the hole surface and the recast layer inside the hole are the two main issues for reducing the ablating precision of hole, especially for the recast layer, it can't be eliminated completely even through the trepanning technology. In this paper, the self-cleaning effect which is a particular property just for percussion ablating of holes has been presented in detail. In addition, the reasons inducing the self-cleaning effect have been discussed. At last, based on the self-cleaning effect of percussion drilling, high quality cooling hole without the melting spatter materials around the hole surface and recast layer inside the hole could be ablated in nickel-based superalloy by picosecond ultra-short pulse laser.

Amazon boundary layer aerosol concentration sustained by vertical transport during rainfall

Energy Technology Data Exchange (ETDEWEB)

Wang, Jian; Krejci, Radovan; Giangrande, Scott; Kuang, Chongai; Barbosa, Henrique M. J.; Brito, Joel; Carbone, Samara; Chi, Xuguang; Comstock, Jennifer; Ditas, Florian; Lavric, Jost; Manninen, Hanna E.; Mei, Fan; Moran-Zuloaga, Daniel; Pöhlker, Christopher; Pöhlker, Mira L.; Saturno, Jorge; Schmid, Beat; Souza, Rodrigo A. F.; Springston, Stephen R.; Tomlinson, Jason M.; Toto, Tami; Walter, David; Wimmer, Daniela; Smith, James N.; Kulmala, Markku; Machado, Luiz A. T.; Artaxo, Paulo; Andreae, Meinrat O.; Petäjä, Tuukka; Martin, Scot T.

2016-10-24

A necessary prerequisite of cloud formation, aerosol particles represent one of the largest uncertainties in computer simulations of climate change1,2, in part because of a poor understanding of processes under natural conditions3,4. The Amazon rainforest is one of the few continental regions where aerosol particles and their precursors can be studied under near-natural conditions5-7. Cloud condensation nuclei (CCN) in clean Amazonia are mostly produced by the growth of smaller particles in the boundary layer8-10, whereas these smaller particles themselves 31 appear to be produced elsewhere5,11. Key questions are in what part of the atmosphere they might 32 be produced and what could be the transport processes that deliver them to the boundary layer, where they grow into CCN. Here, using recent aircraft measurements above central Amazonia, we show high concentrations of small particles in the lower free troposphere. The particle size spectrum shifts towards larger sizes with decreasing altitude, implying particle growth as air descends from the free troposphere towards Earth's surface. Complementary measurements at ground sites show that free tropospheric air having high concentrations of small particles (diameters of less than 50 nm) is transported into the boundary layer during precipitation events, both by strong convective downdrafts and by weaker downward motions in the trailing stratiform region. This vertical transport helps maintain the population of small particles and ultimately CCN in the boundary layer, thereby playing an important role in controlling the climate state under natural conditions. In contrast, this mechanism becomes masked under polluted conditions, which sometimes prevail at times in Amazonia as well as over other tropical continental regions5,12.

Instability, Turbulence, and Enhanced Transport in Collisionless Black-Hole Accretion Flows

Science.gov (United States)

Kunz, Matthew

Many astrophysical plasmas are so hot and diffuse that the collisional mean free path is larger than the system size. Perhaps the best examples of such systems are lowluminosity accretion flows onto black holes such as Sgr A* at the center of our own Galaxy, or M87 in the Virgo cluster. To date, theoretical models of these accretion flows are based on magnetohydrodynamics (MHD), a collisional fluid theory, sometimes (but rarely) extended with non-MHD features such as anisotropic (i.e. magnetic-field-aligned) viscosity and thermal conduction. While these extensions have been recognized as crucial, they require ad hoc assumptions about the role of microscopic kinetic instabilities (namely, firehose and mirror) in regulating the transport properties. These assumptions strongly affect the outcome of the calculations, and yet they have never been tested using more fundamental (i.e. kinetic) models. This proposal outlines a comprehensive first-principles study of the plasma physics of collisionless accretion flows using both analytic and state-of-the-art numerical models. The latter will utilize a new hybrid-kinetic particle-in-cell code, Pegasus, developed by the PI and Co-I specifically to study this problem. A comprehensive kinetic study of the 3D saturation of the magnetorotational instability in a collisionless plasma will be performed, in order to understand the interplay between turbulence, transport, and Larmor-scale kinetic instabilities such as firehose and mirror. Whether such instabilities alter the macroscopic saturated state, for example by limiting the transport of angular momentum by anisotropic pressure, will be addressed. Using these results, an appropriate "fluid" closure will be developed that can capture the multi-scale effects of plasma kinetics on magnetorotational turbulence, for use by the astrophysics community in building evolutionary models of accretion disks. The PI has already successfully performed the first three-dimensional kinetic

Charge transport along luminescent oxide layers containing Si and SiC nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Jambois, O. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)]. E-mail: ojambois@el.ub.es; Vila, A. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Pellegrino, P. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Carreras, J. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Perez-Rodriguez, A. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Garrido, B. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Bonafos, C. [Nanomaterials Group, CEMES-CNRS, 29 rue J. Marvig 31055, Toulouse (France); BenAssayag, G. [Nanomaterials Group, CEMES-CNRS, 29 rue J. Marvig 31055, Toulouse (France)

2006-12-15

The electrical conductivity of silicon oxides containing silicon and silicon-carbon nanoparticles has been investigated. By use of sequential Si{sup +} and C{sup +} ion implantations in silicon oxide followed by an annealing at 1100 deg. C, luminescent Si nanocrystals and SiC nanoparticles were precipitated. The characterization of the electrical transport has been carried out on two kinds of structures, allowing parallel or perpendicular transport, with respect to the substrate. The first type of samples were elaborated by means of a focus-ion-beam technique: electrical contacts to embedded nanoparticles were made by milling two nanotrenches on the sample surface until reaching the buried layer, then filling them with tungsten. The distance between the electrodes is about 100 nm. The second type of samples correspond to 40 nm thick typical MOS capacitors. The electron transport along the buried layer has shown a dramatic lowering of the electrical current, up to five orders of magnitude, when applying a sequence of voltages. It has been related to a progressive charge retention inside the nanoparticles, which, on its turn, suppresses the electrical conduction along the layer. On the other hand, the MOS capacitors show a reversible carrier charge and discharge effect that limits the current at low voltage, mostly due to the presence of C in the layers. A typical Fowler-Nordheim injection takes place at higher applied voltages, with a threshold voltage equal to 23 V.

White emission from organic light-emitting diodes with a super-thin BCP layer

International Nuclear Information System (INIS)

Hao Jingang; Deng Zhenbo; Yang Shengyi

2007-01-01

We report a method to achieve white emission from organic light-emitting diodes (OLEDs) in which a super-thin (3 nm) hole blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), was inserted between electron-transport layer 8-hydroxyquinoline aluminum (Alq 3 ) and 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) doped poly-vinlycarbazole (PVK) layer. The BCP layer can not only confine exciton in the emitting layer but also control energy transfer proportion from PVK to Alq 3 and then from Alq 3 to DCJTB through BCP layer. In this way, pure white emission with CIE coordinate of (0.32, 0.32) was obtained and it was voltage independent. The brightness reached 270 cd/m 2 at 18 V with an efficiency of 0.166 cd/A

Bubble-induced mixing of two horizontal liquid layers with non-uniform gas injection at the bottom

International Nuclear Information System (INIS)

Cheung, F.B.; Leinweber, G.; Pedersen, D.R.

1984-01-01

During a postulated severe core meltdown accident in an LMFBR, a large amount of sodium coolant may spill into the reactor concrete cavity. A layer of liquid products may form as a result of the sodium-concrete reactions. The liquid product layer, which is highly viscous and much heavier than sodium, separates the concrete from the sodium pool. In general, the downward transport of sodium through the liquid product layer to the unreacted concrete surface, which controls the rate of chemical erosion of the concrete, depends strongly on the agitation induced by gas evolution from the heated concrete. In this study, experiments were conducted to explore the effect of non-uniform gas injection on mixing of two horizontal mutually soluble liquid layers. The liquid in the lower layer was chosen to be more viscous and heavier than the liquid in the upper layer. To simulate the reactor accident situation, gas was injected at the bottom of the liquid-liquid system through a circular hole that covered only the center portion of the bottom surface of the lower liquid layer. The bubble-induced mixing motions were observed and the rate of mixing was measured for different hole sizes and for various gas flow rates

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

Science.gov (United States)

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

MEP parabolic hydrodynamical model for holes in silicon semiconductors

International Nuclear Information System (INIS)

Mascali, G.; Romano, V.; Sellier, J. M.

2005-01-01

Consistent hydrodynamical models for electron transport in semi-conductors, free of any fitting parameter, have been formulated on the basis of the maximum entropy principle in Continuum Mech. Thermodyn., 11 (1999) 307, 12 (2000) 31 for silicon and in Continuum Mech. Thermodyn., 14 (2002) 405 for GaAs. In this paper we use the same approach for studying the hole transport in Si, by considering a parabolic approximation for the valence energy band. Scattering of holes with non-polar optical phonons, acoustic phonons and impurities have been taken into account. On the basis of these results, a limiting energy-transport model and an explicit expression for the low field hole mobility have been obtained. The high field mobility is also analyzed by taking into account the influence of impurities

Global transport and localized layering of metallic ions in the upper atmospherer

Directory of Open Access Journals (Sweden)

L. N. Carter

Full Text Available A numerical model has been developed which is capable of simulating all phases of the life cycle of metallic ions, and results are described and interpreted herein for the typical case of Fe+ ions. This cycle begins with the initial deposition of metallics through meteor ablation and sputtering, followed by conversion of neutral Fe atoms to ions through photoionization and charge exchange with ambient ions. Global transport arising from daytime electric fields and poleward/ downward di.usion along geomagnetic field lines, localized transport and layer formation through de- scending convergent nulls in the thermospheric wind field, and finally annihilation by chemical neutralization and compound formation are treated. The model thus sheds new light on the interdependencies of the physical and chemical processes a.ecting atmospheric metallics. Model output analysis confirms the dominant role of both global and local transport to the ion's life cycle, showing that upward forcing from the equatorial electric field is critical to global movement, and that diurnal and semidiurnal tidal winds are responsible for the forma- tion of dense ion layers in the 90±250 km height region. It is demonstrated that the assumed combination of sources, chemical sinks, and transport mechanisms actually produces F-region densities and E-region layer densities similar to those observed. The model also shows that zonal and meridional winds and electric fields each play distinct roles in local transport, whereas the ion distribution is relatively insensitive to reasonable variations in meteoric deposition and chemical reaction rates.

Key words. Ionosphere (ion chemistry and composition; ionosphere-atmosphere interactions.

Two-dimensional hole systems in indium-based quantum well heterostructures

Energy Technology Data Exchange (ETDEWEB)

Loher, Josef

2016-08-01

The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of InAlAs/InGaAs/InAs:Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate. Within these magnetotransport experiments, a reproducible phenomenon of remarkable robustness emerged in the transverse Hall magnetoresistivity of the indium 2DHG systems which are grown on a special InAlAs step-graded metamorphic buffer layer structure to compensate crystal lattice mismatch. As a consequence of the strain relaxation process, these material systems are characterized by anisotropic properties along different crystallographic directions. We identify a puzzling offset phenomenon in the zero-field Hall magnetoresistance and demonstrate it to be a universal effect in systems with spatially anisotropic transport properties.

Improved performances of organic light-emitting diodes with mixed layer and metal oxide as anode buffer

Science.gov (United States)

Xue, Qin; Liu, Shouyin; Zhang, Shiming; Chen, Ping; Zhao, Yi; Liu, Shiyong

2013-01-01

We fabricated organic light-emitting devices (OLEDs) employing 2-methyl-9,10-di(2-naphthyl)-anthracene (MADN) as hole-transport material (HTM) instead of commonly used N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB). After inserting a 0.9 nm thick molybdenum oxide (MoOx) layer at the indium tin oxide (ITO)/MADN interface and a 5 nm thick mixed layer at the organic/organic heterojunction interface, the power conversion efficiency of the device can be increased by 4-fold.

A Fast Measuring Method for the Inner Diameter of Coaxial Holes.

Science.gov (United States)

Wang, Lei; Yang, Fangyun; Fu, Luhua; Wang, Zhong; Yang, Tongyu; Liu, Changjie

2017-03-22

A new method for fast diameter measurement of coaxial holes is studied. The paper describes a multi-layer measuring rod that installs a single laser displacement sensor (LDS) on each layer. This method is easy to implement by rotating the measuring rod, and immune from detecting the measuring rod's rotation angles, so all diameters of coaxial holes can be calculated by sensors' values. While revolving, the changing angles of each sensor's laser beams are approximately equal in the rod's radial direction so that the over-determined nonlinear equations of multi-layer holes for fitting circles can be established. The mathematical model of the measuring rod is established, all parameters that affect the accuracy of measurement are analyzed and simulated. In the experiment, the validity of the method is verified, the inner diameter measuring precision of 28 μm is achieved by 20 μm linearity LDS. The measuring rod has advantages of convenient operation and easy manufacture, according to the actual diameters of coaxial holes, and also the varying number of holes, LDS's mounting location can be adjusted for different parts. It is convenient for rapid diameter measurement in industrial use.

Hole drift mobility in poly(hexylphenylsilane)

International Nuclear Information System (INIS)

Kunimi, Y.; Seki, S.; Tagawa, S.

2000-01-01

Poly(n-alkylphenylsilane)s in which n-alkyl were changed from methyl to octyl were polymerized. Hole transport properties of poly(alkyllphenylsilane)s were systematically studied by the DC time-of-flight (TOF) technique. While the hole drift mobility of poly(methylphenylsilane) increased monotonously in entire field, those of poly(hexylphenylsilane) and poly(octylphenylsilane) decreased with increase in the field strength. Temperature dependence of hole drift mobility in those polymers was small. On the basis of Baessler's disorder formalism the mobility was analyzed quantitatively to disserve complex contributions of charge transport. The analyzed results indicated that with increase in the length of n-alkyl side-groups, the energetic disorder of hopping sites became smaller and the disorder of distance between hopping sites became larger. These results were supported by the results obtained by UV absorption measurement and positron annihilation life-time spectroscopy measurement. (author)

A TCP/IP transport layer for the DAQ of the CMS experiment

International Nuclear Information System (INIS)

Kozlovszky, M.

2004-01-01

The CMS collaboration is currently investigating various networking technologies that may meet the requirements of the CMS Data Acquisition System (DAQ). During this study, a peer transport component based on TCP/IP has been developed using object-oriented techniques for the distributed DAQ framework named XDAQ. This framework has been designed to facilitate the development of distributed data acquisition systems within the CMS Experiment. The peer transport component has to meet 3 main requirements. Firstly, it had to provide fair access to the communication medium for competing applications. Secondly, it had to provide as much of the available bandwidth to the application layer as possible. Finally, it had to hide the complexity of using non-blocking TCP/IP connections from the application layer. This paper describes the development of the peer transport component and then presents and draws conclusions on the measurements made during tests. The major topics investigated include: blocking versus non-blocking communication, TCP/IP configuration options, multi-rail connections

Computations of intermittent transport in scrape-off layer plasmas

DEFF Research Database (Denmark)

Garcia, O.E.; Naulin, V.; Nielsen, A.H.

2004-01-01

in the form of blobs. These structures propagate far into the scrape-off layer where they are dissipated due to transport along open magnetic field lines. From single-point recordings it is shown that the blobs have asymmetric conditional wave forms and lead to positively skewed and flattened probability......Two-dimensional fluid simulations of interchange turbulence for geometry and parameters relevant for the scrape-off layer of magnetized plasmas are presented. The computations, which have distinct plasma production and loss regions, reveal bursty ejection of particles and heat from the bulk plasma...... distribution functions. The radial propagation velocity may reach one-tenth of the sound speed. These results are in excellent agreement with recent experimental measurements....

Quantitative description of charge-carrier transport in a white organic light-emitting diode

Science.gov (United States)

Schober, M.; Anderson, M.; Thomschke, M.; Widmer, J.; Furno, M.; Scholz, R.; Lüssem, B.; Leo, K.

2011-10-01

We present a simulation model for the analysis of charge-carrier transport in organic thin-film devices, and apply it to a three-color white hybrid organic light-emitting diode (OLED) with fluorescent blue and phosphorescent red and green emission. We simulate a series of single-carrier devices, which reconstruct the OLED layer sequence step by step. Thereby, we determine the energy profiles for hole and electron transport, show how to discern bulk from interface limitation, and identify trap states.

Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene

KAUST Repository

Dacuñ a, Javier; Desai, Amit; Xie, Wei; Salleo, Alberto

2014-01-01

Defects have been intentionally introduced in a rubrene single crystal by means of two different mechanisms: ultraviolet ozone (UVO) exposure and x-ray irradiation. A complete drift-diffusion model based on the mobility edge (ME) concept, which takes into account asymmetries and nonuniformities in the semiconductor, is used to estimate the energetic and spatial distribution of trap states. The trap distribution for pristine devices can be decomposed into two well defined regions: a shallow region ascribed to structural disorder and a deeper region ascribed to defects. UVO and x ray increase the hole trap concentration in the semiconductor with different energetic and spatial signatures. The former creates traps near the top surface in the 0.3-0.4 eV region, while the latter induces a wider distribution of traps extending from the band edge with a spatial distribution that peaks near the top and bottom interfaces. In addition to inducing hole trap states in the transport gap, both processes are shown to reduce the mobility with respect to a pristine crystal. © 2014 American Physical Society.

Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene

KAUST Repository

Dacuña, Javier

2014-06-05

Defects have been intentionally introduced in a rubrene single crystal by means of two different mechanisms: ultraviolet ozone (UVO) exposure and x-ray irradiation. A complete drift-diffusion model based on the mobility edge (ME) concept, which takes into account asymmetries and nonuniformities in the semiconductor, is used to estimate the energetic and spatial distribution of trap states. The trap distribution for pristine devices can be decomposed into two well defined regions: a shallow region ascribed to structural disorder and a deeper region ascribed to defects. UVO and x ray increase the hole trap concentration in the semiconductor with different energetic and spatial signatures. The former creates traps near the top surface in the 0.3-0.4 eV region, while the latter induces a wider distribution of traps extending from the band edge with a spatial distribution that peaks near the top and bottom interfaces. In addition to inducing hole trap states in the transport gap, both processes are shown to reduce the mobility with respect to a pristine crystal. © 2014 American Physical Society.

Use of neutron capture gamma radiation for determining grade of iron ore in blast holes and exploration holes

International Nuclear Information System (INIS)

Eisler, P.L.; Huppert, P.; Mathew, P.J.; Wylie, A.W.; Youl, S.F.

1977-01-01

Neutron radiative capture and neutron-neutron logging have been applied to determining the grade of ore in dry blast holes and a dry exploration hole drilled into a layered iron deposit. Both thermal and epithermal neutron responses were measured as well as the gamma-ray responses due to neutron capture by iron and by hydrogen present in hydrated minerals. The results were fitted by a stepwise multiple linear regression technique to give expressions for mean grade of ore in the drill hole and 95% confidence intervals for estimation of this mean. For an overall range of ore grades of 20-68% Fe and a mean grade of 63% Fe, the confidence interval for prediction of mean grade for the neutron-gamma technique was 0.3% Fe for pooled data from all five blast holes and 0.8% Fe for a single hole. It was also shown that for this type of layered deposit a simpler neutron-neutron log incorporating simultaneous measurement of both thermal and epithermal neutron responses gave almost as good a grade prediction result for pooled results from five drill holes, namely 63+-0.4% Fe, as that obtained by the neutron-gamma technique. The results of both types of log are compared with those obtained by the spectral gamma-ray backscattering [Psub(z)] technique, or by logging of natural gamma radiations from the shale component of the ore. From this comparison conclusions are drawn regarding the most suitable technique to employ for determining grade of iron ore in various practical logging situations. (author)

Hierarchical Model for the Similarity Measurement of a Complex Holed-Region Entity Scene

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Zhanlong Chen

2017-11-01

Full Text Available Complex multi-holed-region entity scenes (i.e., sets of random region with holes are common in spatial database systems, spatial query languages, and the Geographic Information System (GIS. A multi-holed-region (region with an arbitrary number of holes is an abstraction of the real world that primarily represents geographic objects that have more than one interior boundary, such as areas that contain several lakes or lakes that contain islands. When the similarity of the two complex holed-region entity scenes is measured, the number of regions in the scenes and the number of holes in the regions are usually different between the two scenes, which complicates the matching relationships of holed-regions and holes. The aim of this research is to develop several holed-region similarity metrics and propose a hierarchical model to measure comprehensively the similarity between two complex holed-region entity scenes. The procedure first divides a complex entity scene into three layers: a complex scene, a micro-spatial-scene, and a simple entity (hole. The relationships between the adjacent layers are considered to be sets of relationships, and each level of similarity measurements is nested with the adjacent one. Next, entity matching is performed from top to bottom, while the similarity results are calculated from local to global. In addition, we utilize position graphs to describe the distribution of the holed-regions and subsequently describe the directions between the holes using a feature matrix. A case study that uses the Great Lakes in North America in 1986 and 2015 as experimental data illustrates the entire similarity measurement process between two complex holed-region entity scenes. The experimental results show that the hierarchical model accounts for the relationships of the different layers in the entire complex holed-region entity scene. The model can effectively calculate the similarity of complex holed-region entity scenes, even if the

Expansible apparatus for removing the surface layer from a concrete object

International Nuclear Information System (INIS)

Allen, C.H.

1979-01-01

A method and apparatus for removing the surface layer from a concrete object are described. The method consists of providing a hole having a circular wall in the surface layer of the object, the hole being at least as deep as the thickness of the surface layer to be removed, and applying an outward wedging pressure on the wall of the hole sufficient to spall the surface layer around the hole. By the proper spacing of an appropriate number of holes, it is possible to remove the entire surface layer. The apparatus consists of an elongated tubular-shaped body having a relatively short handle with a solid wall at one end. The wall of the remainder of the body contains a plurality of evenly spaced longitudinal cuts to form a relatively long expandable section. The outer end of the expandable section has an expandable, wedge-shaped spalling edge extending from the outer surface of the wall, perpendicular to the longitudinal axis of the body, and expanding means in the body for outwardly expanding the expandable section and forcing the spalling edge into the wall of a hole with sufficient outward pressure to spall away the surface layer of concrete. The method and apparatus are particularly suitable for removing surface layers of concrete which are radioactively contaminated

The effect of interfacial layers on charge transport in organic solar cell

Energy Technology Data Exchange (ETDEWEB)

Mbuyise, Xolani G.; Tonui, Patrick; Mola, Genene Tessema, E-mail: mola@ukzn.ac.za

2016-09-01

The effect of interfacial buffer layers in organic photovoltaic cell (OPV) whose active layer is composed of poly(3 hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend was studied. The electrical properties of OPV devices produced with and without interfacial layers are compared and discussed in terms of measured parameters of the cells. The charge transport properties showed significant difference on the mobility and activation factor between the two types of device structures. The life time measurements in the unprotected conditions are also presented and discussed.

Boundary layer parameterizations and long-range transport

International Nuclear Information System (INIS)

Irwin, J.S.

1992-01-01

A joint work group between the American Meteorological Society (AMS) and the EPA is perusing the construction of an air quality model that incorporates boundary layer parameterizations of dispersion and transport. This model could replace the currently accepted model, the Industrial Source Complex (ISC) model. The ISC model is a Gaussian-plume multiple point-source model that provides for consideration of fugitive emissions, aerodynamic wake effects, gravitational settling and dry deposition. A work group of several Federal and State agencies is perusing the construction of an air quality modeling system for use in assessing and tracking visibility impairment resulting from long-range transport of pollutants. The modeling system is designed to use the hourly vertical profiles of wind, temperature and moisture resulting from a mesoscale meteorological processor that employs four dimensional data assimilation (FDDA). FDDA involves adding forcing functions to the governing model equations to gradually ''nudge'' the model state toward the observations (12-hourly upper air observations of wind, temperature and moisture, and 3-hourly surface observations of wind and moisture). In this way it is possible to generate data sets whose accuracy, in terms of transport, precipitation, and dynamic consistency is superior to both direct interpolation of synoptic-scale analyses of observations and purely predictive mode model result. (AB) ( 19 refs.)

Dynamic study of a compressed electron layer during the hole-boring stage in a sharp-front laser interaction region

Directory of Open Access Journals (Sweden)

W. P. Wang

2012-08-01

Full Text Available This study investigates the dynamics of a compressed electron layer (CEL when a circularly polarized laser pulse with a sharp front irradiates a high-density foil. A time-dependent model for CEL motion during the hole-boring stage is proposed to describe details of the interaction for any shape of laser pulse. The opacity case, where the laser pulse is totally reflected, is investigated using this model. The results obtained are consistent with the results from particle-in-cell (PIC simulations. A relaxation distance determined by the laser-front steepness is necessary to build a stable CEL state before ions rejoin into the CEL. For the transparent case, the laser-front steepness is important for the formation of the stable CEL state at the back surface of the target. Considering the motion of ions, both the CEL and ion dynamics are important to rebalance the laser pressure and electrostatic charge-separation force as the hole-boring stage changes to the light-sail stage.

Hydrodynamic theory of convective transport across a dynamically stabilized diffuse boundary layer

International Nuclear Information System (INIS)

Gerhauser, H.

1983-09-01

The diffuse boundary layer between miscible liquids is subject to Rayleigh-Taylor instabilities if the heavy fluid is supported by the light one. The resulting rapid interchange of the liquids can be suppressed by enforcing vertical oscillations on the whole system. This dynamic stabilization is incomplete and produces some peculiar novel transport phenomena such as decay off the density profile into several steps, periodic peeling of density sheets of the boundary layer and the appearance of steady vortex flow. The theory presented in this paper identifies the basic mechanism as formation of convective cells leading to enhanced diffusion, and explains previous experimental results with water and ZnJ 2 -solutions. A nonlinear treatment of the stationary convective flow problem gives the saturation amplitude of the ground mode and provides an upper bound for the maximum convective transport. The hydrodynamic model can be used for visualizing similar transport processes in the plasma of toroidal confinement devices such as sawtooth oscillations in soft disruptions of tokamak discharges and anomalous diffusion by excitation of convective cells. The latter process is investigated here in some detail, leading to the result that the maximum possible transport is of the order of Bohm diffusion. (orig.)

Hole distribution in (Sr, Ca, Y, La)14Cu24O41 compounds studies by x-ray absorption and emission spectroscopy

International Nuclear Information System (INIS)

Kabasawa, Eiki; Nakamura, Jin; Yamada, Nobuyoshi; Kuroki, Kazuhiko; Yamazaki, Hisashi; Watanabe, Masamitsu; Denlinger, Jonathan D.; Shin, Shik; Perera, Rupert C.C.

2008-01-01

The polarization dependence of soft x-ray absorption spectroscopy (XAS) and x-ray emission spectroscopy (XES) near the O 1s absorption edge was measured on two-leg ladder single-crystalline samples of (Sr, Ca, Y, La) 14 Cu 24 O 41 (14-24-41). The hole distributions in 14-24-41 compounds are determined by polarization analysis. For samples with less than or equal to 5 holes/chemical formula (c.f.), all holes reside on the edge-shared chain layer. In the case of Sr 14-x Ca x Cu 24 O 41 (6 holes/c.f.), there is approximately one hole on the two-leg ladder layer, with about five holes remaining on the edge-shared chain layer. By Ca substitution for Sr in the Sr 14-x Ca x Cu 24 O 41 samples, 0.3 holes transfer from the edge-shared chain to the two-leg ladder layer. It is possible that some of the holes on the two-leg ladder layer move from the rung sites to the leg sites upon Ca substitution. (author)

Ion Transport through Diffusion Layer Controlled by Charge Mosaic Membrane

Directory of Open Access Journals (Sweden)

Akira Yamauchi

2012-01-01

Full Text Available The kinetic transport behaviors in near interface of the membranes were studied using commercial anion and cation exchange membrane and charge mosaic membrane. Current-voltage curve gave the limiting current density that indicates the ceiling of conventional flux. From chronopotentiometry above the limiting current density, the transition time was estimated. The thickness of boundary layer was derived with conjunction with the conventional limiting current density and the transition time from steady state flux. On the other hand, the charge mosaic membrane was introduced in order to examine the ion transport on the membrane surface in detail. The concentration profile was discussed by the kinetic transport number with regard to the water dissociation (splitting on the membrane surface.

Prospects of Ternary Cd1-x Zn x S as an Electron Transport Layer and Associated Interface Defects in a Planar Lead Halide Perovskite Solar Cell via Numerical Simulation

Science.gov (United States)

Chowdhury, Towhid Hossain; Ferdaous, Mohammad Tanvirul; Wadi, Mohd. Aizat Abdul; Chelvanathan, Puvaneswaran; Amin, Nowshad; Islam, Ashraful; Kamaruddin, Nurhafiza; Zin, Muhammad Irsyamuddin M.; Ruslan, Mohd Hafidz; Sopian, Kamaruzzaman Bin; Akhtaruzzaman, Md.

2018-03-01

In this study we present a ternary alloy, Cd1-x Zn x S as an electron transport layer for a planar lead halide perovskite solar cell via numerical simulation with solar cell capacitance simulator (SCAPS) software. Performance dependence on molar composition variation in the Cd1-x Zn x S alloy was studied for the mixed perovskite CH3NH3PbI3-x Cl x absorber and spiro-OMeTAD hole transport material in a planar perovskite solar cell. Additionally, the defects on both Cd1-x Zn x S/CH3NH3PbI3-x Cl x and CH3NH3PbI3-x Cl x /spiro-OMeTAD interface were thoroughly investigated. Simultaneously, a thickness of 700 nm for CH3NH3PbI3-x Cl x absorber with 50-nm-thick Cd0.2Zn0.8S (x = 0.8) was optimized. Analysis of the numerical solutions via SCAPS provides a trend and pattern for Cd0.2Zn0.8S as an effective electron transport layer for planar perovskite solar cells with a yield efficiency up to 24.83%. The planar perovskite solar cell shows an open-circuit voltage of 1.224 V, short-circuit current density of 25.283 mA/cm2 and a fill factor of 80.22.

Amazon boundary layer aerosol concentration sustained by vertical transport during rainfall.

Science.gov (United States)

Wang, Jian; Krejci, Radovan; Giangrande, Scott; Kuang, Chongai; Barbosa, Henrique M J; Brito, Joel; Carbone, Samara; Chi, Xuguang; Comstock, Jennifer; Ditas, Florian; Lavric, Jost; Manninen, Hanna E; Mei, Fan; Moran-Zuloaga, Daniel; Pöhlker, Christopher; Pöhlker, Mira L; Saturno, Jorge; Schmid, Beat; Souza, Rodrigo A F; Springston, Stephen R; Tomlinson, Jason M; Toto, Tami; Walter, David; Wimmer, Daniela; Smith, James N; Kulmala, Markku; Machado, Luiz A T; Artaxo, Paulo; Andreae, Meinrat O; Petäjä, Tuukka; Martin, Scot T

2016-11-17

The nucleation of atmospheric vapours is an important source of new aerosol particles that can subsequently grow to form cloud condensation nuclei in the atmosphere. Most field studies of atmospheric aerosols over continents are influenced by atmospheric vapours of anthropogenic origin (for example, ref. 2) and, in consequence, aerosol processes in pristine, terrestrial environments remain poorly understood. The Amazon rainforest is one of the few continental regions where aerosol particles and their precursors can be studied under near-natural conditions, but the origin of small aerosol particles that grow into cloud condensation nuclei in the Amazon boundary layer remains unclear. Here we present aircraft- and ground-based measurements under clean conditions during the wet season in the central Amazon basin. We find that high concentrations of small aerosol particles (with diameters of less than 50 nanometres) in the lower free troposphere are transported from the free troposphere into the boundary layer during precipitation events by strong convective downdrafts and weaker downward motions in the trailing stratiform region. This rapid vertical transport can help to maintain the population of particles in the pristine Amazon boundary layer, and may therefore influence cloud properties and climate under natural conditions.

Quantum Transmission Conditions for Diffusive Transport in Graphene with Steep Potentials

Science.gov (United States)

Barletti, Luigi; Negulescu, Claudia

2018-05-01

We present a formal derivation of a drift-diffusion model for stationary electron transport in graphene, in presence of sharp potential profiles, such as barriers and steps. Assuming the electric potential to have steep variations within a strip of vanishing width on a macroscopic scale, such strip is viewed as a quantum interface that couples the classical regions at its left and right sides. In the two classical regions, where the potential is assumed to be smooth, electron and hole transport is described in terms of semiclassical kinetic equations. The diffusive limit of the kinetic model is derived by means of a Hilbert expansion and a boundary layer analysis, and consists of drift-diffusion equations in the classical regions, coupled by quantum diffusive transmission conditions through the interface. The boundary layer analysis leads to the discussion of a four-fold Milne (half-space, half-range) transport problem.

Quantitative characterization of water transport and flooding in the diffusion layers of polymer electrolyte fuel cells

Energy Technology Data Exchange (ETDEWEB)

Casalegno, A.; Colombo, L.; Galbiati, S.; Marchesi, R. [Department of Energy, Politecnico di Milano, via Lambruschini 4, 20156 Milano (Italy)

2010-07-01

Optimization of water management in polymer electrolyte membrane fuel cells (PEMFC) and in direct methanol fuel cells (DMFC) is a very important factor for the achievement of high performances and long lifetime. A good hydration of the electrolyte membrane is essential for high proton conductivity; on the contrary water in excess may lead to electrode flooding and severe reduction in performances. Many studies on water transport across the gas diffusion layer (GDL) have been carried out to improve these components; anyway efforts in this field are affected by lack of effective experimental methods. The present work reports an experimental investigation with the purpose to determine the global coefficient of water transport across different diffusion layers under real operating conditions. An appropriate and accurate experimental apparatus has been designed and built to test the single GDL under a wide range of operating conditions. Data analysis has allowed quantification of both the water vapor transport across different diffusion layers, and the effects of micro-porous layers; furthermore flooding onset and its consequences on the mass transport coefficient have been characterized by means of suitably defined parameters. (author)

Mechanism of Cuticle Hole Development in Human Hair Due to UV-Radiation Exposure

Directory of Open Access Journals (Sweden)

Kazuhisa Maeda

2018-03-01

Full Text Available Hair is easily damaged by ultraviolet (UV radiation, bleaching agents or permanent wave treatments, and as damage progresses, hair loses its gloss, develops split ends and breaks. However, the causes of hair damage due to UV radiation have not yet been clarified. We discovered that in one mechanism facilitating damage to wet hair by UV radiation, the unsaturated fatty acids in wet hair produce hydroxy radicals upon exposure to UV radiation, and these radicals produce cuticle holes between the cuticle layers. In wet hair exposed to UV radiation, cuticle holes were produced only between the cuticle layers, whereas when human hair was immersed in a solution containing hydroxy radicals produced by Fenton’s reaction, a random production of cuticle holes was noted. It is thought that hydroxy radicals are produced only between the cuticle layers by exposure to UV radiation, and cuticle holes are formed only in this region because one of the polyunsaturated fatty acids, linoleic acid, with a bis-allyl hydrogen, is found between the cuticle layers.

White emission from organic light-emitting diodes with a super-thin BCP layer

Energy Technology Data Exchange (ETDEWEB)

Hao Jingang [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Deng Zhenbo [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)]. E-mail: zbdeng@center.njtu.edu.cn; Yang Shengyi [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)

2007-01-15

We report a method to achieve white emission from organic light-emitting diodes (OLEDs) in which a super-thin (3 nm) hole blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), was inserted between electron-transport layer 8-hydroxyquinoline aluminum (Alq{sub 3}) and 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) doped poly-vinlycarbazole (PVK) layer. The BCP layer can not only confine exciton in the emitting layer but also control energy transfer proportion from PVK to Alq{sub 3} and then from Alq{sub 3} to DCJTB through BCP layer. In this way, pure white emission with CIE coordinate of (0.32, 0.32) was obtained and it was voltage independent. The brightness reached 270 cd/m{sup 2} at 18 V with an efficiency of 0.166 cd/A.

Effect of Boundary-Layer Bleed Hole Inclination Angle and Scaling on Flow Coefficient Behavior

Science.gov (United States)

Eichorn, Michael B.; Barnhart, Paul J.; Davis, David O.; Vyas, Manan A.; Slater, John W.

2013-01-01

Phase II data results of the Fundamental Inlet Bleed Experiments study at NASA Glenn Research Center are presented which include flow coefficient behavior for 21 bleed hole configurations. The bleed configurations are all round holes with hole diameters ranging from 0.795 to 6.35 mm, hole inclination angles from 20deg to 90deg, and thickness-to-diameter ratios from 0.25 to 2.0. All configurations were tested at a unit Reynolds number of 2.46 10(exp 7)/m and at discrete local Mach numbers of 1.33, 1.62, 1.98, 2.46, and 2.92. Interactions between the design parameters of hole diameter, hole inclination angle, and thickness-to-diameter as well as the interactions between the flow parameters of pressure ratio and Mach number upon the flow coefficient are examined, and a preliminary statistical model is proposed. An existing correlation is also examined with respect to this data.

White light emission from exciplex using tris-(8-hydroxyquinoline)aluminum as chromaticity-tuning layer

International Nuclear Information System (INIS)

Feng, Jing; Li, Feng; Gao, Wenbao; Liu, Shiyong; Liu, Yu; Wang, Yue

2001-01-01

We demonstrate efficient organic white light-emitting devices (LEDs), using N,N prime-diphenyl-N,N prime-bis(1-naphthyl) - (1,1 prime-biphenyl)-4,4 prime-diamine (NPB) as the hole-transporting layer, 1,6-bis(2-hydroxyphenyl)pyridine boron complex [(dppy)BF] as the emitting layer, tris-(8-hydroxyquinoline)aluminum (Alq) as the electron-transporting and chromaticity-tuning layer. The white light comes from exciplex emission at the solid-state interface between (dppy)BF and NPB in addition to the exciton emission from NPB and (dppy)BF, respectively. The chromaticity of white emission can be tuned by adjusting the thickness of the Alq layer. The white LEDs with an Alq thickness of 15 nm exhibit a maximum luminescence of 2000 cd/m2 and efficiency of 0.58 lm/W, and the Commission Internationale De l'Eclairage coordinates of resulting emission vary from (0.29,0.33) to (0.31,0.35) with increasing forward bias from 10 to 25 V. The region is very close to the equienergy white point (0.33,0.33). [copyright] 2001 American Institute of Physics

Magnetotransport of High Mobility Holes in Monolayer and Bilayer WSe2

Science.gov (United States)

Tutuc, Emanuel

Transition metal dichalcogenides have attracted significant interest because of their two-dimensional crystal structure, large band-gap, and strong spin-orbit interaction which leads to spin-valley locking. Recent advances in sample fabrication have allowed the experimental study of low temperature magneto-transport of high mobility holes in WSe2. We review here the main results of these studies which reveal clear quantum Hall states in mono- and bilayer WSe2. The data allows the extraction of an effective hole mass of m* = 0.45me (me is the bare electron mass) in both mono and bilayer WSe2. A systematic study of the carrier distribution in bilayer WSe2 determined from a Fourier analysis of the Shubnikov-de Haas oscillations indicates that the two layers are weakly coupled. The individual layer density dependence on gate bias shows negative compressibility, a signature of strong electron-electron interaction in these materials associated with the large effective mass. We discuss the interplay between cyclotron and Zeeman splitting using the dependence of the quantum Hall state sequence on carrier density, and the angle between the magnetic field and the WSe2 plane. Work done in collaboration with B. Fallahazad, H. C. P. Movva, K. Kim, S. K. Banerjee, T. Taniguchi, and K. Watanabe. This work supported by the Nanoelectronics Research Initiative SWAN center, Intel Corp., and National Science Foundation.

Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Energy Technology Data Exchange (ETDEWEB)

Polubavkina, Yu. S., E-mail: polubavkina@mail.ru; Zubov, F. I.; Moiseev, E. I.; Kryzhanovskaya, N. V.; Maximov, M. V. [Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation); Semenova, E. S.; Yvind, K. [Technical University of Denmark, DTU Fotonik (Denmark); Asryan, L. V. [Virginia Polytechnic Institute and State University (United States); Zhukov, A. E. [Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation)

2017-02-15

The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm{sup 2}) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.

Specific features of waveguide recombination in laser structures with asymmetric barrier layers

DEFF Research Database (Denmark)

Polubavkina, Yu; Zubov, F. I.; Moiseev, E.

2017-01-01

microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding......The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical...... layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport....

Black holes as possible sources of closed and semiclosed worlds

International Nuclear Information System (INIS)

Frolov, V.P.; Markov, M.A.; Mukhanov, V.F.

1990-01-01

The internal structure of spacetime inside a black hole is investigated on the assumption that some limiting curvature exists. It is shown that the Schwarzschild metric inside the black hole can be attached to the de Sitter one at some spacelike junction surface which may represent a short transition layer. The method of massive thin shells by Israel is used to obtain the characteristics of this layer. It is shown that instead of the singularity the closed world can be formed inside the black hole. It is argued that this property of our model may also be valid in a more general case provided the gravitation theory is asymptotically free and the limiting curvature exists. After passing the deflation stage the closed world in the black-hole interior may begin to inflate and give rise to a new macroscopic universe. The described model may be considered as an example of the creation of a closed or semiclosed world ''in the laboratory.'' The possible fate of the evaporating black hole is also briefly discussed

Boundary layers as the primary transport regions of the earth's magnetotail

International Nuclear Information System (INIS)

Eastman, T.E.; Frank, L.A.; Huang, C.Y.

1985-01-01

A comprehensive survey of ISEE and IMP LEPEDEA plasma measurements in the earth's magnetotail reveals that the magnetospheric boundary layer and the plasma sheet boundary layer are the primary transport regions there. These plasma measurements also distinguish various components of the plasma sheet, including the central plasma sheet and plasma sheet boundary layer. A significant new result reported here is the existence of cold-and hot-plasma components that are spatially copresent within the central plasma sheet. Such plasma components cannot be explained merely by temporal variations in spectra involving the entire plasma sheet. Contributions to a low-temperature component of the plasma sheet enter directly from the boundary layer located along the magnetotail flanks. Field-aligned flows predominate within the plasma sheet boundary layer, which is almost always present and is located near the northern and southern border of the plasma sheet. The plasma sheet boundary layer comprises highly anisotropic ion distributions, including counteracting ion beams, that evolve into the hot, isotropic component of the plasma sheet

The Experimental Measurement of Local and Bulk Oxygen Transport Resistances in the Catalyst Layer of Proton Exchange Membrane Fuel Cells.

Science.gov (United States)

Wang, Chao; Cheng, Xiaojing; Lu, Jiabin; Shen, Shuiyun; Yan, Xiaohui; Yin, Jiewei; Wei, Guanghua; Zhang, Junliang

2017-12-07

Remarkable progress has been made in reducing the cathodic Pt loading of PEMFCs; however, a huge performance loss appears at high current densities, indicating the existence of a large oxygen transport resistance associated with the ultralow Pt loading catalyst layer. To reduce the Pt loading without sacrificing cell performance, it is essential to illuminate the oxygen transport mechanism in the catalyst layer. Toward this goal, an experimental approach to measure the oxygen transport resistance in catalyst layers is proposed and realized for the first time in this study. The measuring approach involves a dual-layer catalyst layer design, which consists of a dummy catalyst layer and a practical catalyst layer, followed by changing the thickness of dummy layer to respectively quantify the local and bulk resistances via limiting current measurements combined with linear extrapolation. The experimental results clearly reveal that the local resistance dominates the total resistance in the catalyst layer.

Process and machinery description of equipment for deposition of canisters in medium-long deposition holes

International Nuclear Information System (INIS)

Kalbantner, P.

2001-08-01

In this report twelve methods are presented to deposit a canister with spent nuclear fuel in a horizontal hole, several canisters per hole (MLH). These methods are part of the KBS-3 system. They have been developed successively, after an analysis of weak points and strong points in previously described methods. In conformance with the guidelines for Project JADE, a choices of system has been considered during the development work. This is whether canister and bentonite buffer should be deposited 'in parts', i.e. at different occasions, but shortly after each other or 'in a package', i.e. together in a single package. The other choice in the guidelines for the JADE project, whether the canister should be placed in a radiation shield or not during transport in the secondary tunnels, was not relevant to MLR. The basic technical problem is depositing heavy objects, the canister and the buffer components, in an horizontal hole which is approximately 200 m deep. Two methods for depositing of the bentonite barrier and the canisters in separate processes have been studied. For depositing of the bentonite barrier and the canister 'in a package', four alternative techniques have been studied: a metallic sleeve around the package, a loading scoop that is rotated, a fork carriage and rails. The repeated transports in a hole, a consequence of depositing several canisters in the same hole, could lead to the rock being crushed. The mutual impact of machines, load and rock wall has therefore been particularly considered. In several methods, the use of a gangway has been proposed (steel plates or layer of ice). A failure mode and effect analysis has been performed for one of the twelve methods. When comparing with a method to deposit one canister per hole using the same technique, the need for equipment and resources is far larger for this MLH method if incidents should occur during depositing. The development work reported here has not yet yielded a definitive method for placing

Numerical modeling of solute transport in deformable unsaturated layered soil

Directory of Open Access Journals (Sweden)

Sheng Wu

2017-07-01

Full Text Available The effect of soil stratification was studied through numerical investigation based on the coupled model of solute transport in deformable unsaturated soil. The theoretical model implied two-way coupled excess pore pressure and soil deformation based on Biot's consolidation theory as well as a one-way coupled volatile pollutant concentration field developed from the advection-diffusion theory. Embedded in the model, the degree of saturation, fluid compressibility, self-weight of the soil matrix, porosity variance, longitudinal dispersion, and linear sorption were computed. Based on simulation results of a proposed three-layer landfill model using the finite element method, the multi-layer effects are discussed with regard to the hydraulic conductivity, shear modulus, degree of saturation, molecular diffusion coefficient, and thickness of each layer. Generally speaking, contaminants spread faster in a stratified field with a soft and highly permeable top layer; soil parameters of the top layer are more critical than the lower layers but controlling soil thicknesses will alter the results. This numerical investigation showed noticeable impacts of stratified soil properties on solute migration results, demonstrating the importance of correctly modeling layered soil instead of simply assuming the averaged properties across the soil profile.

White OLED with high stability and low driving voltage based on a novel buffer layer MoOx

Energy Technology Data Exchange (ETDEWEB)

Jiang Xueyin [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang Zhilin [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Cao Jin [Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072 (China); Khan, M A [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Khizar-ul-Haq [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhu Wenqing [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China)

2007-09-21

White organic light emitting diodes (WOLEDs) with copper phthalocyanine (CuPc), 4,4',4-prime-tris(N-3-methylphenyl-N-phenyl-amino) triphenylamine (m-MTDATA), tungsten oxide (WO{sub 3}) and molybdenum oxide (MoOx) as buffer layers have been investigated. The MoOx based device shows superior performance with low driving voltage, high power efficiency and much longer lifetime than those with other buffer layers. For the Cell using MoOx as buffer layer and 4,7-diphenyl-1,10-phenanthroline (Bphen) as electron transporting layer (ETL), at the luminance of 1000 cd m{sup -2}, the driving voltage is 4.9 V, which is 4.2 V, 2 V and 0.7 V lower than that of the devices using CuPc (Cell-CuPc), m-MTDATA (Cell-m-MTDATA) and WO{sub 3} (Cell-WO{sub 3}) as buffer layers, respectively. Its power efficiency is 7.67 Lm W{sup -1}, which is 2.37 times higher than that of Cell-CuPc and a little higher than that of Cell-m-MTDATA. The projected half-life under the initial luminance of 100 cd m{sup -2} is 55 260 h, which is more than 4.6 times longer than that of Cell-m-MTDATA and Cell-CuPc. The superior performance of Cell-MoOx is attributed to its high hole injection ability and the stable interface between MoOx and organic material. The work function of MoOx has been measured by the contact potential difference method. The J-V curves of 'hole-only' devices indicate that a small hole injection barrier between MoOx/N,'-bis(naphthalene-1-y1)-N, N'-bis(phenyl)-benzidine (NPB) leads to a strong hole injection, resulting in a low driving voltage and a high stability.

X-Ray Spectra from MHD Simulations of Accreting Black Holes

Science.gov (United States)

Schnittman, Jeremy D.; Krolik, Julian H.; Noble, Scott C.

2012-01-01

We present the results of a new global radiation transport code coupled to a general relativistic magneto-hydrodynamic simulation of an accreting, nonrotating black hole. For the first time, we are able to explain from first principles in a self-consistent way the X-ray spectra observed from stellar-mass black holes, including a thermal peak, Compton reflection hump, power-law tail, and broad iron line. Varying only the mass accretion rate, we are able to reproduce the low/hard, steep power-law, and thermal-dominant states seen in most galactic black hole sources. The temperature in the corona is T(sub e) 10 keV in a boundary layer near the disk and rises smoothly to T(sub e) greater than or approximately 100 keV in low-density regions far above the disk. Even as the disk's reflection edge varies from the horizon out to approximately equal to 6M as the accretion rate decreases, we find that the shape of the Fe Ka line is remarkably constant. This is because photons emitted from the plunging region are strongly beamed into the horizon and never reach the observer. We have also carried out a basic timing analysis of the spectra and find that the fractional variability increases with photon energy and viewer inclination angle, consistent with the coronal hot spot model for X-ray fluctuations.

Black hole gravitohydromagnetics

CERN Document Server

Punsly, Brian

2008-01-01

Black hole gravitohydromagnetics (GHM) is developed from the rudiments to the frontiers of research in this book. GHM describes plasma interactions that combine the effects of gravity and a strong magnetic field, in the vicinity (ergosphere) of a rapidly rotating black hole. This topic was created in response to the astrophysical quest to understand the central engines of radio loud extragalactic radio sources. The theory describes a "torsional tug of war" between rotating ergospheric plasma and the distant asymptotic plasma that extracts the rotational inertia of the black hole. The recoil from the struggle between electromagnetic and gravitational forces near the event horizon is manifested as a powerful pair of magnetized particle beams (jets) that are ejected at nearly the speed of light. These bipolar jets feed large-scale magnetized plasmoids on scales as large as millions of light years (the radio lobes of extragalactic radio sources). This interaction can initiate jets that transport energy fluxes exc...

Fabrication of PDMS through-holes using the MIMIC method and the surface treatment by atmospheric-pressure CH4/He RF plasma

Science.gov (United States)

Choi, Jongchan; Lee, Kyeong-Hwan; Yang, Sung

2011-09-01

This note presents a simple fabrication process for patterning micro through-holes in a PDMS layer by a combination of the micromolding in capillaries (MIMIC) method and the surface treatment by atmospheric-pressure CH4/He RF plasma. The fabrication process is confirmed by forming micro through-holes with various shapes including circle, C-shape, open microfluidic channel and hemisphere. All micro through-holes of various shapes in a wide range of diameters and heights are well fabricated by the proposed method. Also, a 3D micromixer containing a PDMS micro through-hole layer formed by the proposed method is built and its performance is tested as another practical demonstration of the proposed fabrication method. Therefore, we believe that the proposed fabrication process will build a PDMS micro through-hole layer in a simple and easy way and will contribute to developing highly efficient multi-layered microfluidic systems, which may require PDMS micro through-hole layers.

[Multiple emissions in organic electroluminescent device using a mixed layer as an emitter].

Science.gov (United States)

Zhu, Wen-qing; Wu, You-zhi; Zheng, Xin-you; Jiang, Xue-yin; Zhang, Zhi-lin; Sun, Run-guang; Xu, Shao-hong

2005-04-01

A organic electroluminescent device has been fabricated by using a mixed layer as an emitter. The configuration of the device is ITO/TPD/TPD: PBD(equimole)/PBD/A1, in which TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine) and PBD (2-(4'-biphenyl)-5-(4''-tert-butylphenyl)-1,3,4-oxadiazole) are used as hole transport material and electron transport material, respectively. Broad and red-shifted electroluminescent spectra related to the fluorescence of constituent materials were observed. It is suggested that the monomer, exciplex and electroplex emissions are simultaneously involved in EL spectra by comparison of the EL with the PL spectra and decomposition of the EL spectrum. The type of exciplex is the interaction between the excited state TPD (TPD*) and PBD in the ground state, and the type of electroplex is a (D+-A-)* complex by cross-recombination of hole on the charged hole transport molecule (D+) and electron on the charged electron transport molecule (A-). All types of excited states show different formation mechanisms and recombination processes under electric field. The change of emission strengths from monomer and excited complexes lead to a blue-shift of the emissive spectra with an increasing electric field. The maximum luminance and external quantum efficiency of this device are 240 cd x (cm2)(-1) and 0.49%, respectively. The emissions from exciplex or electroplex formation at the organic solid interface generally present a broad and red-shifted emissive band, providing an effective method for tuning of emission color in organic electroluminescent devices.

Common-User Land Transportation Management in the Layered, Non-Linear, Non-Contiguous Battlefield

National Research Council Canada - National Science Library

Strobel, Lawrence E

2005-01-01

.... Current multinational counterinsurgency warfare occurs in a layered, non-linear, non-contiguous battle space, making management of ground transportation assets even more critical than in conventional warfare...

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells.

Science.gov (United States)

Lin, Wenjie; Wu, Weiliang; Liu, Zongtao; Qiu, Kaifu; Cai, Lun; Yao, Zhirong; Ai, Bin; Liang, Zongcun; Shen, Hui

2018-04-25

A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x , x solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm 2 ). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x /Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x . Compared with the commercialized p-type solar cell, the novel CrO x -based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.

Observation of plasma hole in a rotating plasma

International Nuclear Information System (INIS)

Nagaoka, Kenichi; Ishihara, Tatsuzo; Okamoto, Atsushi; Yoshimura, Shinji; Tanaka, Masayoshi Y.

2001-01-01

Plasma hole, a cylindrical density cavity, formed in a rotating plasma has been investigated experimentally. The plasma hole is characterized by large aspect ratio (length/radius ≥ 30), steep boundary layer between the hole and the ambient plasma (10 ion Larmor radius), and extremely high positive potential (130 V). The flow velocity field associated with plasma hole structure has been measured, and is found to have interesting features: (1) plasma rotates in azimuthal direction at a maximum velocity of order of ion sound speed, (2) plasma flows radially inward across the magnetic field line, (3) there present an axial flow reversal between core and peripheral region. It is found that the flow pattern of the plasma hole is very similar to the that of well-developed typhoon with core. (author)

Bi-layer non-doped small-molecular white organic light-emitting diodes with high colour stability

International Nuclear Information System (INIS)

Chen Shuming; Kwok, Hoi-Sing; Zhao Zujin; Tang Benzhong; Wang Zhiming; Lu Ping; Gao Zhao; Ma Yuguang

2011-01-01

Bi-layer non-doped white organic light-emitting diodes (WOLEDs) with hole-transporting layer 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl)phenyl) thiophen-2yl)benzo[c][1,2,5]thiadiazole (BTPETTD) as a red emitter and electron-transporting layer 4,4'-bis(1-phenyl-1H-phenanthro[9,10-d]imidazol-2-yl)biphenyl (DDPi) as a blue emitter are demonstrated. The blue emission is due to direct recombination of excitons in DPPi, while the red emission originates not only from the direct recombination of excitons in BTPETTD but also from a colour down-conversion process by absorbing blue emission and re-emitting red photons. The combination of blue emission and red emission yields an efficient and extremely stable white colour, regardless of driving voltages. In our demonstration, a bi-layer WOLED with an efficiency of 4.2 cd A -1 at 1000 cd m -2 , 1931 Commision International de L'Eclairage coordinates of (0.31, 0.31) and a high colour rendering index of 92 over a wide range of driving voltages is obtained.

Tetra-methyl substituted copper (II) phthalocyanine as a hole injection enhancer in organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Wang, Yu-Long; Xu, Jia-Ju; Lin, Yi-Wei; Chen, Qian; Shan, Hai-Quan; Xu, Zong-Xiang, E-mail: xu.zx@sustc.edu.cn, E-mail: val.roy@cityu.edu.hk [Department of Chemistry, South University of Science and Technology of China, Shenzhen, Guangdong, P. R. China, 518055 (China); Yan, Yan; Roy, V. A. L., E-mail: xu.zx@sustc.edu.cn, E-mail: val.roy@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (Hong Kong)

2015-10-15

We have enhanced hole injection and lifetime in organic light-emitting diodes (OLEDs) by incorporating the isomeric metal phthalocyanine, CuMePc, as a hole injection enhancer. The OLED devices containing CuMePc as a hole injection layer (HIL) exhibited higher luminous efficiency and operational lifetime than those using a CuPc layer and without a HIL. The effect of CuMePc thickness on device performance was investigated. Atomic force microscope (AFM) studies revealed that the thin films were smooth and uniform because the mixture of CuMePc isomers depressed crystallization within the layer. This may have caused the observed enhanced hole injection, indicating that CuMePc is a promising HIL material for highly efficient OLEDs.

Tetra-methyl substituted copper (II phthalocyanine as a hole injection enhancer in organic light-emitting diodes