Calculated sputtering and atomic displacement cross-sections for applications to medium voltage analytical electron microscopy

International Nuclear Information System (INIS)

Bradley, C.R.; Zaluzec, N.J.

1987-08-01

The development of medium voltage electron microscopes having high brightness electron sources and ultra-high vacuum environments has been anticipated by the microscopy community now for several years. The advantages of such a configuration have been discussed to great lengths, while the potential disadvantages have for the most part been neglected. The most detrimental of these relative to microcharacterization are the effects of electron sputtering and atomic displacement to the local specimen composition. These effects have in the past been considered mainly in the high voltage electron microscope regime and generally were ignored in lower voltage instruments. Recent experimental measurements have shown that the effects of electron sputtering as well as radiation induced segregation can be observed in conventional transmission electron microscopes. It is, therefore, important to determine at what point the effects will begin to manifest themselves in the new generation of medium voltage analytical electron microscopes. In this manuscript we present new calculations which allow the individual experimentalist to determine the potential threshold levels for a particular elemental system and thus avoid the dangers of introducing artifacts during microanalysis. 12 refs., 3 figs

Void formation in NiTi shape memory alloys by medium-voltage electron irradiation

International Nuclear Information System (INIS)

Schlossmacher, P.; Stober, T.

1995-01-01

In-situ electron irradiation experiments of NiTi shape memory alloys, using high-voltage transmission electron microscopes, result in amorphization of the intermetallic compound. In all of these experiments high-voltages more than 1.0 MeV had to be applied in order to induce the crystalline-to-amorphous transformation. To their knowledge no irradiation effects of medium-voltage electrons of e.g. 0.5 MeV have been reported in the literature. In this contribution, the authors describe void formation in two different NiTi shape memory alloys, resulting from in-situ electron irradiation, using a 300 kV electron beam in a transmission electron microscope. First evidence is presented that void formation is correlated with the total oxygen content of the alloys

Transmission positron microscopes

International Nuclear Information System (INIS)

Doyama, Masao; Kogure, Yoshiaki; Inoue, Miyoshi; Kurihara, Toshikazu; Yoshiie, Toshimasa; Oshima, Ryuichiro; Matsuya, Miyuki

2006-01-01

Immediate and near-future plans for transmission positron microscopes being built at KEK, Tsukuba, Japan, are described. The characteristic feature of this project is remolding a commercial electron microscope to a positron microscope. A point source of electrons kept at a negative high voltage is changed to a point source of positrons kept at a high positive voltage. Positional resolution of transmission microscopes should be theoretically the same as electron microscopes. Positron microscopes utilizing trapping of positrons have always positional ambiguity due to the diffusion of positrons

Minimal exposure technique in the Cambridge University 600kV high resolution electron microscope

International Nuclear Information System (INIS)

Fryer, J.R.; Cleaver, J.R.A.; Smith, D.J.

1980-01-01

Radiation damage due to the incident electron beam imposes a fundamental limitation on the information obtainable by electron microscopy about organic materials; it is desirable therefore that exposure of the specimen to the electron beam should be restricted to the actual period during which the image is being recorded. A description is given of methods employed in the observation of the organic aromatic hydrocarbons quaterrylene, ovalene and coronene with the Cambridge University 600kV high resolution electron microscope (HREM). In particular, the condenser-objective mode of operation of this microscope lends itself to the use of an area-defining aperture below the second condenser lens conjugate with the specimen. Furthermore, operation at the higher accelerating voltage of this instrument could be anticipated to reduce the rate of damage, depending on the dominant beam-specimen interaction, whilst the increased width of the first broad band of the contrast transfer function of this microscope at the optimum defocus may overcome the reported resolution limitation of current 100kV microscopes for the observation of related materials. (author)

Electron sputtering in the analytical electron microscope: Calculations and experimental data

International Nuclear Information System (INIS)

Zaluzec, N.J.; Mansfield, J.F.

1987-03-01

The environment of the electron microscope is particularly severe when one considers the energy deposited in a specimen during typical experimental conditions. Conventional imaging experiments tend to employ electron current densities ranging from ∼0.1 to 1 A/cm 2 while during microanalysis conditions probe current densities can range from 10 to values as high as 10 5 A/cm 2 . At 100 kV this corresponds to power densities from 100 Kilowatts/cm 2 to 10 4 Megawatts/cm 2 . These energy deposition rates can result in electron irradiation damage which can substantially alter the structure and composition of a specimen through either ionization damage in organics or by displacement damage in inorganics and/or combinations thereof. For the most part materials scientists operating an analytical electron microscope (AEM) in the 100 to 200 kV regime studying metallic and/or ceramic specimens have been spared the need to consider either of these effects as their specimens have tended to be sufficiently resilient. However, the advent of the new medium voltage microscopes operating in the 300 to 400 kV regime with high brightness guns and clean or ultrahigh vacuum systems has necessitated a reevaluation of the effects of higher voltage operation in light of the destructive nature of the electron beam particularly under microanalysis conditions

Angle selective backscattered electron contrast in the low-voltage scanning electron microscope: Simulation and experiment for polymers

Energy Technology Data Exchange (ETDEWEB)

Wan, Q., E-mail: qwan2@sheffield.ac.uk [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Masters, R.C. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Lidzey, D. [Department of Physics and Astronomy, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Abrams, K.J. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Dapor, M. [European Centre for Theoretical Studies in Nuclear Physics and Related Areas (ECT-FBK) and Trento Institute for Fundamental Physics and Applications (TIFPA-INFN), via Sommarive 18, I-38123 Trento (Italy); Plenderleith, R.A. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Rimmer, S. [Department of Chemistry, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom); Claeyssens, F.; Rodenburg, C. [Department of Material Science and Engineering, University of Sheffield, Western Bank, Sheffield S10 2TN (United Kingdom)

2016-12-15

Recently developed detectors can deliver high resolution and high contrast images of nanostructured carbon based materials in low voltage scanning electron microscopes (LVSEM) with beam deceleration. Monte Carlo Simulations are also used to predict under which exact imaging conditions purely compositional contrast can be obtained and optimised. This allows the prediction of the electron signal intensity in angle selective conditions for back-scattered electron (BSE) imaging in LVSEM and compares it to experimental signals. Angle selective detection with a concentric back scattered (CBS) detector is considered in the model in the absence and presence of a deceleration field, respectively. The validity of the model prediction for both cases was tested experimentally for amorphous C and Cu and applied to complex nanostructured carbon based materials, namely a Poly(N-isopropylacrylamide)/Poly(ethylene glycol) Diacrylate (PNIPAM/PEGDA) semi-interpenetration network (IPN) and a Poly(3-hexylthiophene-2,5-diyl) (P3HT) film, to map nano-scale composition and crystallinity distribution by avoiding experimental imaging conditions that lead to a mixed topographical and compositional contrast - Highlights: • An optimised model for nano-scale analysis of beam sensitive materials by LVSEM. • Simulation and separation of composition and topography in a CBS detector. • Selective angle backscattered electron collection for mapping of polymers.

Angle selective backscattered electron contrast in the low-voltage scanning electron microscope: Simulation and experiment for polymers

International Nuclear Information System (INIS)

Wan, Q.; Masters, R.C.; Lidzey, D.; Abrams, K.J.; Dapor, M.; Plenderleith, R.A.; Rimmer, S.; Claeyssens, F.; Rodenburg, C.

2016-01-01

Recently developed detectors can deliver high resolution and high contrast images of nanostructured carbon based materials in low voltage scanning electron microscopes (LVSEM) with beam deceleration. Monte Carlo Simulations are also used to predict under which exact imaging conditions purely compositional contrast can be obtained and optimised. This allows the prediction of the electron signal intensity in angle selective conditions for back-scattered electron (BSE) imaging in LVSEM and compares it to experimental signals. Angle selective detection with a concentric back scattered (CBS) detector is considered in the model in the absence and presence of a deceleration field, respectively. The validity of the model prediction for both cases was tested experimentally for amorphous C and Cu and applied to complex nanostructured carbon based materials, namely a Poly(N-isopropylacrylamide)/Poly(ethylene glycol) Diacrylate (PNIPAM/PEGDA) semi-interpenetration network (IPN) and a Poly(3-hexylthiophene-2,5-diyl) (P3HT) film, to map nano-scale composition and crystallinity distribution by avoiding experimental imaging conditions that lead to a mixed topographical and compositional contrast - Highlights: • An optimised model for nano-scale analysis of beam sensitive materials by LVSEM. • Simulation and separation of composition and topography in a CBS detector. • Selective angle backscattered electron collection for mapping of polymers.

Integration of a high-NA light microscope in a scanning electron microscope.

Science.gov (United States)

Zonnevylle, A C; Van Tol, R F C; Liv, N; Narvaez, A C; Effting, A P J; Kruit, P; Hoogenboom, J P

2013-10-01

We present an integrated light-electron microscope in which an inverted high-NA objective lens is positioned inside a scanning electron microscope (SEM). The SEM objective lens and the light objective lens have a common axis and focal plane, allowing high-resolution optical microscopy and scanning electron microscopy on the same area of a sample simultaneously. Components for light illumination and detection can be mounted outside the vacuum, enabling flexibility in the construction of the light microscope. The light objective lens can be positioned underneath the SEM objective lens during operation for sub-10 μm alignment of the fields of view of the light and electron microscopes. We demonstrate in situ epifluorescence microscopy in the SEM with a numerical aperture of 1.4 using vacuum-compatible immersion oil. For a 40-nm-diameter fluorescent polymer nanoparticle, an intensity profile with a FWHM of 380 nm is measured whereas the SEM performance is uncompromised. The integrated instrument may offer new possibilities for correlative light and electron microscopy in the life sciences as well as in physics and chemistry. © 2013 The Authors Journal of Microscopy © 2013 Royal Microscopical Society.

Choice of operating voltage for a transmission electron microscope

International Nuclear Information System (INIS)

Egerton, R.F.

2014-01-01

An accelerating voltage of 100–300 kV remains a good choice for the majority of TEM or STEM specimens, avoiding the expense of high-voltage microscopy but providing the possibility of atomic resolution even in the absence of lens-aberration correction. For specimens thicker than a few tens of nm, the image intensity and scattering contrast are likely to be higher than at lower voltage, as is the visibility of ionization edges below 1000 eV (as required for EELS elemental analysis). In thick (>100 nm) specimens, higher voltage ensures less beam broadening and better spatial resolution for STEM imaging and EDX spectroscopy. Low-voltage (e.g. 30 kV) TEM or STEM is attractive for a very thin (e.g. 10 nm) specimen, as it provides higher scattering contrast and fewer problems for valence-excitation EELS. Specimens that are immune to radiolysis suffer knock-on damage at high current densities, and this form of radiation damage can be reduced or avoided by choosing a low accelerating voltage. Low-voltage STEM with an aberration-corrected objective lens (together with a high-angle dark-field detector and/or EELS) offers atomic resolution and elemental identification from very thin specimens. Conventional TEM can provide atomic resolution in low-voltage phase-contrast images but requires correction of chromatic aberration and preferably an electron-beam monochromator. Many non-conducting (e.g. organic) specimens damage easily by radiolysis and radiation damage then determines the TEM image resolution. For bright-field scattering contrast, low kV can provide slightly better dose-limited resolution if the specimen is very thin (a few nm) but considerably better resolution is possible from a thicker specimen, for which higher kV is required. Use of a phase plate in a conventional TEM offers the most dose-efficient way of achieving atomic resolution from beam-sensitive specimens. - Highlights: • 100–300 kV accelerating voltage is suitable for TEM specimens of typical

High voltage high brightness electron accelerators with MITL voltage adder coupled to foilless diodes

International Nuclear Information System (INIS)

Mazarakis, M.G.; Poukey, J.W.; Frost, C.A.; Shope, S.L.; Halbleib, J.A.; Turman, B.N.

1993-01-01

During the last ten years the authors have extensively studied the physics and operation of magnetically-immersed electron foilless diodes. Most of these sources were utilized as injectors to high current, high energy linear induction accelerators such as those of the RADLAC family. Recently they have experimentally and theoretically demonstrated that foilless diodes can be successfully coupled to self-magnetically insulated transmission line voltage adders to produce very small high brightness, high definition (no halo) electron beams. The RADLAC/SMILE experience opened the path to a new approach in high brightness, high energy induction accelerators. There is no beam drifting through the device. The voltage addition occurs in a center conductor, and the beam is created at the high voltage end in an applied magnetic field diode. This work was motivated by the remarkable success of the HERMES-III accelerator and the need to produce small radius, high energy, high current electron beams for air propagation studies and flash x-ray radiography. In this paper they present experimental results compared with analytical and numerical simulations in addition to design examples of devices that can produce multikiloamp electron beams of as high as 100 MV energies and radii as small as 1 mm

High-voltage pulse generator for electron gun power supply

International Nuclear Information System (INIS)

Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

1987-01-01

High-voltage pulse generator with combined capacitive and inductive energy storages for electron gun power supply is described. Hydrogen thyratron set in a short magnetic lense is a current breaker. Times of current interruption in thyratrons are in the range from 100 to 300 ns. With 1 kV charging voltage of capacitive energy storage 25 kV voltage pulse is obtained in the load. The given high-voltage pulse generator was used for supply of an electron gun generating 10-30 keV low-energy electron beam

Void formation and growth in copper-nickel alloys during irradiation in the high voltage electron microscope

International Nuclear Information System (INIS)

Leffers, T.; Singh, B.N.; Barlow, P.

1977-05-01

The formation and growth of voids during irradiation in a high-voltage electron microscope were studied in copper and Cu-Ni alloys. For each composition, the range of irradiation temperatures from 250 deg C to 550 deg C was covered. The development of the irradiation-induced dislocation structure was also studied. At irradiation temperatures up to 450 deg C, the void swelling decreased rapidly with increasing Ni content and became practically zero for Cu-10%Ni. The decrease in swelling was produced mainly by decreased void growth (and not by decreased void number density). At 550 deg C the void swelling increased with increasing Ni content up to 5%, whereas for Cu-10%Ni the swelling became practically zero; again the changes in swelling with Ni content were mainly determined by changes in void growth. The reduction in void swelling and growth due to alloying is ascribed to vacancy or interstitial trapping at submicroscopic Ni precipitates, i.e. to the precipitates acting as recombination centres. The increase in void swelling and growth with increasing Ni content, on the other hand, is ascribed to dislocation climb sources that emit loops, and hence produce a fairly high dislocation density at a temperature where there are only few dislocations in pure copper or Cu-Ni with lower Ni content. (author)

In situ direct observation of photocorrosion in ZnO crystals in ionic liquid using a laser-equipped high-voltage electron microscope

Directory of Open Access Journals (Sweden)

J. Ishioka

2017-03-01

Full Text Available ZnO photocatalysts in water react with environmental water molecules and corrode under illumination. ZnO nanorods in water can also grow because of water splitting induced by UV irradiation. To investigate their morphological behavior caused by crystal growth and corrosion, here we developed a new laser-equipped high-voltage electron microscope and observed crystal ZnO nanorods immersed in ionic liquid. Exposing the specimen holder to a laser with a wavelength of 325 nm, we observed the photocorrosion in situ at the atomic scale for the first time. This experiment revealed that Zn and O atoms near the interface between the ZnO nanorods and the ionic liquid tended to dissolve into the liquid. The polarity and facet of the nanorods were strongly related to photocorrosion and crystal growth.

Characterization of Li-rich layered oxides by using transmission electron microscope

Directory of Open Access Journals (Sweden)

Hu Zhao

2017-07-01

Full Text Available Lithium-rich layered oxides (LrLOs deliver extremely high specific capacities and are considered to be promising candidates for electric vehicle and smart grid applications. However, the application of LrLOs needs further understanding of the structural complexity and dynamic evolution of monoclinic and rhombohedral phases, in order to overcome the issues including voltage decay, poor rate capability, initial irreversible capacity loss and etc. The development of aberration correction for the transmission electron microscope and concurrent progress in electron spectroscopy, have fueled rapid progress in the understanding of the mechanism of such issues. New techniques based on the transmission electron microscope are first surveyed, and the applications of these techniques for the study of the structure, migration of transition metal, and the activation of oxygen of LrLOs are then explored in detail, with a particular focus on the mechanism of voltage decay. Keywords: Lithium-ion battery, Transmission electron microscope, Lithium-rich layered oxide, Cathode material

The use of the JEM 1250 high voltage electron microscope (HVEM) of the university of Antwerp (RUCA) as an instrument for void swelling simulation experiments

International Nuclear Information System (INIS)

Snijkers, M.; Janssens, C.

1978-01-01

The working procedure has been established for the use of the high voltage electron microscope of the University of Antwerp (RUCA) as an apparatus for testing the swelling behavior of ferritic and austenitic stainless steels. The local temperature increase of the specimen due to beam heating was measured. The results are in good agreement with measurements done in other laboratories. The intensity of the transmitted beam has been measured as a function of specimen thickness (for thicknesses smaller than a few μ) The operation conditions are described for carrying out irradiation experiments and for taking stereo pairs. (author)

Investigation of voltages and electric fields in silicon semi 3D radiation detectors using Silvaco/ATLAS simulation tool and a scanning electron microscope

CERN Document Server

Palviainen, T; Tuuva, T; Eranen, S; Härkönen, J; Luukka, P; Tuovinen, E

2006-01-01

The structure of silicon semi three-dimensional radiation detector is simulated on purpose to find out its electrical characteristics such as the depletion voltage and electric field. Two-dimensional simulation results are compared to voltage and electric field measurements done by a scanning electron microscope.

High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

International Nuclear Information System (INIS)

Tanaka, Masaki; Higashida, Kenji

2005-01-01

Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals

Visualization of atomic distances at the 1MV electron microscope: first results obtained on the Grenoble 1MV microscope

International Nuclear Information System (INIS)

Bourret, A.

1975-01-01

Practical and theoretical conditions for obtaining high resolution lattice images are presented. The use of a high voltage electron microscope is particularly powerful to visualize distances smaller than 3A. A 2A resolution test on (200) gold planes has been carried out on the Grenoble 1MV microscope. It would be possible at this level to study the crystalline defects such as dislocations or grain boundaries [fr

High-voltage scanning ion microscope: Beam optics and design

Energy Technology Data Exchange (ETDEWEB)

Magilin, D., E-mail: dmitrymagilin@gmail.com; Ponomarev, A.; Rebrov, V.; Ponomarov, A.

2015-05-01

This article is devoted to the conceptual design of a compact high-voltage scanning ion microscope (HVSIM). In an HVSIM design, the ion optical system is based on a high-brightness ion source. Specifically, the ion optical system is divided into two components: an ion injector and a probe-forming system (PFS) that consists of an accelerating tube and a multiplet of quadrupole lenses. The crossover is formed and controlled by the injector, which acts as an object collimator, and is focused on the image plane by the PFS. The ion microprobe has a size of 0.1 μm and an energy of 2 MeV. When the influence of the chromatic and third-order aberrations is theoretically taken into account, the HVSIM forms an ion microprobe.

Instrumentation at the National Center for Electron Microscopy: the Atomic Resolution Microscope

International Nuclear Information System (INIS)

Gronsky, R.; Thomas, G.

1983-01-01

The Atomic Resolution Microscope (ARM) is one of two unique high voltage electron microscopes at the Lawrence Berkeley Laboratory's National Center for Electron Microscopy (NCEM). The latest results from this new instrument which was manufactured by JEOL, Ltd. to the performance specifications of the NCEM, delivered in January of 1983, and soon to be open to access by the entire microscopy community are given. Details of its history and development are given and its performance specifications are reviewed

Microscopic Superconductivity and Room Temperature Electronics of High-Tc Cuprates

International Nuclear Information System (INIS)

Liu Fusui; Chen Wanfang

2008-01-01

This paper points out that the Landau criterion for macroscopic superfluidity of He II is only a criterion for microscopic superfluidity of 4 He, extends the Landau criterion to microscopic superconductivity in fermions (electron and hole) system and system with Cooper pairs without long-range phase coherence. This paper gives another three non-superconductive systems that are of microscopic superconductivity. This paper demonstrates that one application of microscopic superconductivity is to establish room temperature electronics of the high-T c cuprates

Indigenous development of scanning electron microscope

International Nuclear Information System (INIS)

Ambastha, K.P.; Chaudhari, Y.V.; Pal, Suvadip; Tikaria, Amit; Pious, Lizy; Dubey, B.P.; Chadda, V.K.

2009-01-01

Scanning electron microscope (SEM) is a precision instrument and plays very important role in scientific studies. Bhabha Atomic Research Centre has taken up the job of development of SEM indigenously. Standard and commercially available components like computer, high voltage power supply, detectors etc. shall be procured from market. Focusing and scanning coils, vacuum chamber, specimen stage, control hardware and software etc. shall be developed at BARC with the help of Indian industry. Procurement, design and fabrication of various parts of SEM are in progress. (author)

Irradiation damage of II-VI compounds in a high-voltage electron microscope

International Nuclear Information System (INIS)

Yoshiie, T.; Iwanaga, H.; Shibata, N.; Suzuki, K.; Ichihara, M.; Takeuchi, S.

1983-01-01

Dislocation loops produced by electron irradiation in a 1 MV electron microscope have been studied above room temperature for five II-VI compounds: CdS and ZnO, with the wurtzite structure, and CdTe, ZnSe and ZnS, with the zincblende structure. For all the crystals the density of loops decreased as the irradiation temperature increased, until no loops were produced above a certain temperature which varied from crystal to crystal. However, the loop density did not depend on the electron flux intensity, suggesting the heterogeneous nucleation at some impurity complex of equilibrium concentration. Diffraction contrast analyses showed that the loops are of interstitial type in each crystal, with Burgers vectors as follows: 1/2[0001] and 1/3 for wurtzite crystals, the density ratio of the former type to the latter being increased with increasing temperature; mostly 1/3 and a few 1/2 for zincblende crystals, the latter type being presumably formed as a result of unfaulting in the former. An effect of crystal polarity on the shape of the loops in zincblende crystals has been observed. (author)

Fully low voltage and large area searching scanning tunneling microscope

International Nuclear Information System (INIS)

Pang, Zongqiang; Wang, Jihui; Lu, Qingyou

2009-01-01

We present a novel scanning tunneling microscope (STM), which allows the tip to travel a large distance (millimeters) on the sample and take images (to find microscopic targets) anywhere it reaches without losing atomic resolution. This broad range searching capability, together with the coarse approach and scan motion, is all done with only one single piezoelectric tube scanner as well as with only low voltages (<15 V). Simple structure, low interference and high precision are thus achieved. To this end, a pillar and a tube scanner are mounted in parallel on a base with one ball glued on the pillar top and two balls glued on the scanner top. These three balls form a narrow triangle, which supports a triangular slider piece. By inertial stepping, the scanner can move the slider toward the pillar (coarse approach) or rotate the slider about the pillar (travel along sample surface). Since all the stepping motions are driven by the scanner's lateral bending which is large per unit voltage, high voltages are unnecessary. The technology is also applicable to scanning force microscopes (SFM) such as atomic force microscopes (AFM), etc

About the contrast of δ' precipitates in bulk Al-Cu-Li alloys in reflection mode with a field-emission scanning electron microscope at low accelerating voltage.

Science.gov (United States)

Brodusch, Nicolas; Voisard, Frédéric; Gauvin, Raynald

2017-11-01

Characterising the impact of lithium additions in the precipitation sequence in Al-Li-Cu alloys is important to control the strengthening of the final material. Since now, transmission electron microscopy (TEM) at high beam voltage has been the technique of choice to monitor the size and spatial distribution of δ' precipitates (Al 3 Li). Here we report on the imaging of the δ' phase in such alloys using backscattered electrons (BSE) and low accelerating voltage in a high-resolution field-emission scanning electron microscope. By applying low-energy Ar + ion milling to the surface after mechanical polishing (MP), the MP-induced corroded layers were efficiently removed and permitted the δ's to be visible with a limited impact on the observed microstructure. The resulting BSE contrast between the δ's and the Al matrix was compared with that obtained using Monte Carlo modelling. The artefacts possibly resulting from the sample preparation procedure were reviewed and discussed and permitted to confirm that these precipitates were effectively the metastable δ's. The method described in this report necessitates less intensive sample preparation than that required for TEM and provides a much larger field of view and an easily interpretable contrast compared to the transmission techniques. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

On some aspects of high voltage electron microscopy

International Nuclear Information System (INIS)

Jouffrey, B.; Trinquier, J.

1987-01-01

The present paper deals with high voltage electron microscopy (HVEM). It is an overview on this domain due to the pionneer work of G. Dupouy which has permitted to perform a new kind of electron microscopy. Since this time, HVEM has shown its interest in high resolution, irradiations, chemical analysis, in situ experiments

High voltage system design for the IUCF 300 KV electron cooling system

International Nuclear Information System (INIS)

Bertuccio, T.; Brown, B.; Donica, G.; Ellison, T.; Friesel, D.L.

1985-01-01

A summary of the electron beam high voltage system design for the IUCF Cooler now under construction, is presented. There are extremely stringent regulation requirements (about 10ppm) on the main high voltage power supply (-300 kVDC, 15 mA), and less stringent requirements on the gun anode power supply, in order to achieve the regulation needed to store beams in the IUCF Cooler with very low momentum spreads (Δp/p approx. = 2 x 10 -5 ). An overview of the main high voltage power supply (HVPS) specifications and design, as well as provisions and plans to improve the regulation are discussed. The electron collection system, modeled after the FNAL collector which was able to collect between 99.9% and 99.99% of the electron beam, is discussed along with the requirements of the associated power supplies. The designs of the high voltage acceleration structures and high voltage platform are discussed, as well as practical design considerations based upon experience with the Fermilab 120 keV electron cooling system

Electronic Current Transducer (ECT) for high voltage dc lines

Science.gov (United States)

Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

1980-02-01

The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

BANSHEE: High-voltage repetitively pulsed electron-beam driver

International Nuclear Information System (INIS)

VanHaaften, F.

1992-01-01

BANSHEE (Beam Accelerator for a New Source of High-Energy Electrons) this is a high-voltage modulator is used to produce a high-current relativistic electron beam for high-power microwave tube development. The goal of the BANSHEE research is first to achieve a voltage pulse of 700--750 kV with a 1-μs pulse width driving a load of ∼100 Ω, the pulse repetition frequency (PRF) of a few hertz. The ensuing goal is to increase the pulse amplitude to a level approaching 1 MV. We conducted tests using half the modulator with an output load of 200 Ω, up to a level of ∼650 kV at a PRF of 1 Hz and 525 kV at a PRF of 5 Hz. We then conducted additional testing using the complete system driving a load of ∼100 Ω

High voltage high brightness electron accelerator with MITL voltage adder coupled to foilless diode

International Nuclear Information System (INIS)

Mazarakis, M.G.; Poulkey, J.W.; Rovang, D.

1995-01-01

The design and analysis of a high brightness electron beam experiment under construction at Sandia National Laboratory is presented. The beam energy is 12 MeV, the current 35-40 kA, the rms radius 0.5 mm, and the pulse duration FWHM 40 ns. The accelerator is SABRE a pulsed inductive voltage adder, and the electron source is a magnetically immersed foilless diode. This experiment has as its goal to stretch the technology to the edge and produce the highest possible electron current in a submillimeter radius beam

Instrumental Developments for In-situ Breakdown Experiments inside a Scanning Electron Microscope

CERN Document Server

Muranaka, T; Leifer, K; Ziemann, V

2011-01-01

Electrical discharges in accelerating structures are one of the key issues limiting the performance of future high energy accelerators such as the Compact Linear Collider (CLIC). Fundamental understanding of breakdown phenomena is an indispensable part of the CLIC feasibility study. The present work concerns the experimental study of breakdown using Scanning Electron Microscopes (SEMs). A SEM gives us the opportunity to achieve high electrical gradients of 1\\,kV/$\\mu$m which corresponds to 1\\,GV/m by exciting a probe needle with a high voltage power supply and controlling the positioning of the needle with a linear piezo motor. The gap between the needle tip and the surface is controlled with sub-micron precision. A second electron microscope equipped with a Focused Ion Beam (FIB) is used to create surface corrugations and to sharpen the probe needle to a tip radius of about 50\\,nm. Moreover it is used to prepare cross sections of a voltage breakdown area in order to study the geometrical surface damages as w...

Determination of the threshold-energy surface for copper using in-situ electrical-resistivity measurements in the high-voltage electron microscope

International Nuclear Information System (INIS)

King, W.E.; Merkle, K.L.; Meshii, M.

1981-01-01

A detailed study of the anisotropy of the threshold energy for Frenkel-pair production in copper was carried out experimentally, using in-situ electrical-resistivity measurements in the high-voltage electron microscope. These electrical-resistivity measurements, which are sensitive to small changes in point-defect concentration, were used to determine the damage or defect production rate. Damage-rate measurements in copper single crystals were carried out for approx.40 incident electron-beam directions and six electron energies from 0.4 to 1.1 MeV. The total cross section for Frenkel-pair production is proportional to the measured damage rate and can be theoretically calculated if the form of the threshold-energy surface is known. Trial threshold-energy surfaces were systematically altered until a ''best fit'' of the calculated to the measured total cross sections for Frenkel-pair production was obtained. The average threshold energy of this surface is 28.5 eV. The minimum threshold energy is 18 +- 2 eV and is located near . A ring of very high threshold energy (>50 eV) surrounds the direction. A damage function for single-defect production was derived from this surface and was applied to defect-production calculations at higher recoil energies. This function rises rather sharply from a value of zero at 17 eV to 0.8 at 42 eV. It has the value of 0.5 at 24.5 eV. Above 30 eV the slope of the curve begins to decrease, reflecting the presence of the high-energy regions of the threshold-energy surface. Both topographical and quantitative comparisons of the present surface with those in the literature were presented. Based on a chi 2 goodness-of-fit test, the present surface was found to predict the experimentally observed total cross sections for Frenkel-pair production significantly better than the other available surfaces. Also, the goodness of fit varied substantially less with energy and direction for the present surface

Interaction of electrons with light metal hydrides in the transmission electron microscope.

Science.gov (United States)

Wang, Yongming; Wakasugi, Takenobu; Isobe, Shigehito; Hashimoto, Naoyuki; Ohnuki, Somei

2014-12-01

Transmission electron microscope (TEM) observation of light metal hydrides is complicated by the instability of these materials under electron irradiation. In this study, the electron kinetic energy dependences of the interactions of incident electrons with lithium, sodium and magnesium hydrides, as well as the constituting element effect on the interactions, were theoretically discussed, and electron irradiation damage to these hydrides was examined using in situ TEM. The results indicate that high incident electron kinetic energy helps alleviate the irradiation damage resulting from inelastic or elastic scattering of the incident electrons in the TEM. Therefore, observations and characterizations of these materials would benefit from increased, instead decreased, TEM operating voltage. © The Author 2014. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Electron beam generation in high voltage glow discharges

International Nuclear Information System (INIS)

Rocca, J.J.; Szapiro, B.; Murray, C.

1989-01-01

The generation of intense CW and pulsed electron beams in glow discharges in reviewed. Glow discharge electron guns operate at a pressure of the order of 1 Torr and often have an advantage in applications that require a broad area electron beam in a gaseous atmosphere, such as laser excitation and some aspects of materials processing. Aspects of electron gun design are covered. Diagnostics of the high voltage glow discharges including the electric field distribution mapped by Doppler free laser spectroscopy, and plasma density and electron temperature measurements of the electron yield of different cathode materials under glow discharge conditions are presented

An inverted-geometry, high voltage polarized electron gun with UHV load lock

International Nuclear Information System (INIS)

Breidenbach, M.; Foss, M.; Hodgson, J.; Kulikov, A.; Odian, A.; Putallaz, G.; Rogers, H.; Schindler, R.; Skarpaas, K.; Zolotorev, M.

1994-01-01

The design of a high voltage electron source with a GaAs photocathode and a load lock system is described. The inverted high voltage structure of the gun permits a compact and simple design. Test results demonstrate that the load lock system provides a reliable way to achieve high quantum efficiency of the photocathode in a high voltage device. ((orig.))

High-resolution, high-throughput imaging with a multibeam scanning electron microscope.

Science.gov (United States)

Eberle, A L; Mikula, S; Schalek, R; Lichtman, J; Knothe Tate, M L; Zeidler, D

2015-08-01

Electron-electron interactions and detector bandwidth limit the maximal imaging speed of single-beam scanning electron microscopes. We use multiple electron beams in a single column and detect secondary electrons in parallel to increase the imaging speed by close to two orders of magnitude and demonstrate imaging for a variety of samples ranging from biological brain tissue to semiconductor wafers. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

In situ electrical probing and bias-mediated manipulation of dielectric nanotubes in a high-resolution transmission electron microscope

International Nuclear Information System (INIS)

Golberg, D.; Mitome, M.; Kurashima, K.; Zhi, C.Y.; Tang, C.C.; Bando, Y.; Lourie, O.

2006-01-01

Boron nitride nanotubes filled with magnesium oxides [MgO, MgO 2 ] and/or hydroxide [Mg(OH) 2 ] are electrically probed and delicately manipulated inside a 300 kV JEOL-3000F high-resolution transmission analytical electron microscope equipped with a side-entry 'Nanofactory Instruments' piezoholder. At a low bias the nanotubes demonstrate truly insulating behavior. At a high bias of ±30 V they show reversible breakdown current of several dozens of nA. Under 300 kV electron beam irradiation the nanotubes are positively charged that allows us to perform on-demand manipulation with them through tuning of polarity and/or value of a bias voltage on a gold counterelectrode from -140 to +140 V, owing to the prominent electrostatic nanotube-electrode interactions

Structure Identification in High-Resolution Transmission Electron Microscopic Images

DEFF Research Database (Denmark)

Vestergaard, Jacob Schack; Kling, Jens; Dahl, Anders Bjorholm

2014-01-01

A connection between microscopic structure and macroscopic properties is expected for almost all material systems. High-resolution transmission electron microscopy is a technique offering insight into the atomic structure, but the analysis of large image series can be time consuming. The present ...

Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

Science.gov (United States)

Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

2017-10-01

A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

Design of full digital 50 kV electronic gun high voltage power supply

International Nuclear Information System (INIS)

Ge Lei; Shang Lei

2014-01-01

The design of full digital electronic gun high voltage power supply based on DSP was introduced in this paper. This power supply has innovations of full digital feedback circuit and PID closed-loop control mode. The application of high frequency resonant converter circuit reduces the size of the resonant element and transformer. The current-coupling distributed high voltage transformer and rectifier circuit were employed in this power supply. By this way, the power supply efficiency is improved and the number of distributed parameters is reduced, and the rectifier circuit could work under the oil-free environment. This power supply has been used in electronic grid-control high voltage system of the irradiation accelerator. (authors)

Design of a transmission electron positron microscope

International Nuclear Information System (INIS)

Doyama, Masao; Inoue, M.; Kogure, Y.; Hayashi, Y.; Yoshii, T.; Kurihara, T.; Tsuno, K.

2003-01-01

This paper reports the plans and design of positron-electron microscopes being built at KEK (High Energy Accelerator Research Organization), Tsukuba, Japan. A used electron microscope is altered. The kinetic energies of positrons produced by accelerators or by nuclear decays are not a unique value but show a spread over in a wide range. Positron beam is guided to a transmission electron microscope (JEM100SX). Positrons are moderated by a tungsten foil, are accelerated and are focused on a nickel sheet. The monochromatic focused beam is injected into an electron microscope. The focusing and aberration of positrons are the same as electrons in a magnetic system which are used in commercial electron microscopes. Imaging plates are used to record positron images for the transmission electron microscope. (author)

Modeling secondary electron emission from nanostructured materials in helium ion microscope

International Nuclear Information System (INIS)

Ohya, K.; Yamanaka, T.

2013-01-01

Charging of a SiO 2 layer on a Si substrate during helium (He) beam irradiation is investigated at an energy range relevant to a He ion microscope (HIM). A self-consistent calculation is performed to model the transport of the ions and secondary electrons (SEs), the charge accumulation in the layer, and the electric field below and above the surface. The calculated results are compared with those for gallium (Ga) ions at the same energy and 1 keV electrons corresponding to a low-voltage scanning electron microscope (SEM). The charging of thin layers ( 2 step formed on a Si substrate, a sharp increase in the number of SEs is observed, irrespective of whether a material is charged or not. When the He ions are incident on the bottom of the step, the re-entrance of SEs emitted from the substrate into the sidewall is clearly observed, but it causes the sidewall to be charged negatively. At the positions on the SiO 2 layer away from the step edge, the charging voltage becomes positive with increasing number of Ga ions and electrons. However, He ions do not induce such a voltage due to strong relaxation of positive and negative charges in the Si substrate and their recombination in the SiO 2 layer

In-situ observation of the alpha/beta cristobalite transition using high voltage electron microscopy

International Nuclear Information System (INIS)

Meike, A.; Glassley, W.E.

1990-01-01

A high temperature water vapor phase is expected to persist in the vicinity of high level radioactive waste packages for several hundreds of years. The authors have begun an investigation of the structural and chemical effects of water on cristobalite because of its abundance in the near field environment. A high voltage transmission electron microscope (HVEM) investigation of bulk synthesized α-cristobalite to be used in single phase dissolution and precipitation kinetics experiments revealed the presence β-cristobalite, quartz and amorphous silica, in addition to α-cristobalite. Consequently, this apparent metastable persistence of β-cristobalite and amorphous silica during the synthesis of α-cristobalite was investigated using a heating stage and an environmental cell installed in the HVEM that allowed the introduction of either dry CO 2 or a CO 2 + H 2 O vapor. Preliminary electron diffraction evidence suggests that the presence of water vapor affected the α-β transition temperature. Water vapor may also be responsible for the development of an amorphous silica phase at the transition that may persist over an interval of several tens of degrees. The amorphous phase was not documented during the dry heating experiments

In-situ observation of the alpha/beta cristobalite transition using high voltage electron microscopy

International Nuclear Information System (INIS)

Meike, A.; Glassley, W.

1989-10-01

A high temperature water vapor phase is expected to persist in the vicinity of high level radioactive waste packages for several hundreds of years. The authors have begun an investigation of the structural and chemical effects of water on cristobalite because of its abundance in the near field environment. A high voltage transmission electron microscope (HVEM) investigation of bulk synthesized α-cristobalite to be used in single phase dissolution and precipitation kinetics experiments revealed the presence β-cristobalite, quartz and amorphous silica, in addition to α-cristobalite. Consequently, this apparent metastable persistence of β-cristobalite and amorphous silica during the synthesis of α-cristobalite was investigated using a heating stage and an environmental cell installed in the HVEM that allowed the introduction of either dry CO 2 or a CO 2 + H 2 O vapor. Preliminary electron diffraction evidence suggests that the presence of water vapor affected the α-β transition temperature. Water vapor may also be responsible for the development of an amorphous silica phase at the transition that may persist over an interval of several tens of degrees. The amorphous phase was not documented during the dry heating experiments. 20 refs., 7 figs., 5 tabs

Electron beam excitation assisted optical microscope with ultra-high resolution.

Science.gov (United States)

Inami, Wataru; Nakajima, Kentaro; Miyakawa, Atsuo; Kawata, Yoshimasa

2010-06-07

We propose electron beam excitation assisted optical microscope, and demonstrated its resolution higher than 50 nm. In the microscope, a light source in a few nanometers size is excited by focused electron beam in a luminescent film. The microscope makes it possible to observe dynamic behavior of living biological specimens in various surroundings, such as air or liquids. Scan speed of the nanometric light source is faster than that in conventional near-field scanning optical microscopes. The microscope enables to observe optical constants such as absorption, refractive index, polarization, and their dynamic behavior on a nanometric scale. The microscope opens new microscopy applications in nano-technology and nano-science.

Low voltage electron beam accelerators

International Nuclear Information System (INIS)

Ochi, Masafumi

2003-01-01

Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

Low voltage electron beam accelerators

Energy Technology Data Exchange (ETDEWEB)

Ochi, Masafumi [Iwasaki Electric Co., Ltd., Tokyo (Japan)

2003-02-01

Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

High voltage processing of the SLC polarized electron gun

International Nuclear Information System (INIS)

Saez, P.; Clendenin, J.; Garden, C.; Hoyt, E.; Klaisner, L.; Prescott, C.; Schultz, D.; Tang, H.

1993-04-01

The SLC polarized electron gun operates at 120 kV with very low dark current to maintain the ultra high vacuum (UHV). This strict requirement protects the extremely sensitive photocathode from contaminants caused by high voltage (HV) activity. Thorough HV processing is thus required x-ray sensitive photographic film, a nanoammeter in series with gun power supply, a radiation meter, a sensitive residual gas analyzer and surface x-ray spectrometry were used to study areas in the gun where HV activity occurred. By reducing the electric field gradients, carefully preparing the HV surfaces and adhering to very strict clean assembly procedures, we found it possible to process the gun so as to reduce both the dark current at operating voltage and the probability of HV discharge. These HV preparation and processing techniques are described

Designs for a quantum electron microscope.

Science.gov (United States)

Kruit, P; Hobbs, R G; Kim, C-S; Yang, Y; Manfrinato, V R; Hammer, J; Thomas, S; Weber, P; Klopfer, B; Kohstall, C; Juffmann, T; Kasevich, M A; Hommelhoff, P; Berggren, K K

2016-05-01

One of the astounding consequences of quantum mechanics is that it allows the detection of a target using an incident probe, with only a low probability of interaction of the probe and the target. This 'quantum weirdness' could be applied in the field of electron microscopy to generate images of beam-sensitive specimens with substantially reduced damage to the specimen. A reduction of beam-induced damage to specimens is especially of great importance if it can enable imaging of biological specimens with atomic resolution. Following a recent suggestion that interaction-free measurements are possible with electrons, we now analyze the difficulties of actually building an atomic resolution interaction-free electron microscope, or "quantum electron microscope". A quantum electron microscope would require a number of unique components not found in conventional transmission electron microscopes. These components include a coherent electron beam-splitter or two-state-coupler, and a resonator structure to allow each electron to interrogate the specimen multiple times, thus supporting high success probabilities for interaction-free detection of the specimen. Different system designs are presented here, which are based on four different choices of two-state-couplers: a thin crystal, a grating mirror, a standing light wave and an electro-dynamical pseudopotential. Challenges for the detailed electron optical design are identified as future directions for development. While it is concluded that it should be possible to build an atomic resolution quantum electron microscope, we have also identified a number of hurdles to the development of such a microscope and further theoretical investigations that will be required to enable a complete interpretation of the images produced by such a microscope. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Permanent magnet finger-size scanning electron microscope columns

Energy Technology Data Exchange (ETDEWEB)

Nelliyan, K., E-mail: elenk@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Khursheed, A. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2011-07-21

This paper presents permanent magnet scanning electron microscope (SEM) designs for both tungsten and field emission guns. Each column makes use of permanent magnet technology and operates at a fixed primary beam voltage. A prototype column operating at a beam voltage of 15 kV was made and tested inside the specimen chamber of a conventional SEM. A small electrostatic stigmator unit and dedicated scanning coils were integrated into the column. The scan coils were wound directly around the objective lens iron core in order to reduce its size. Preliminary experimental images of a test grid specimen were obtained through the prototype finger-size column, demonstrating that it is in principle feasible.

Permanent magnet finger-size scanning electron microscope columns

International Nuclear Information System (INIS)

Nelliyan, K.; Khursheed, A.

2011-01-01

This paper presents permanent magnet scanning electron microscope (SEM) designs for both tungsten and field emission guns. Each column makes use of permanent magnet technology and operates at a fixed primary beam voltage. A prototype column operating at a beam voltage of 15 kV was made and tested inside the specimen chamber of a conventional SEM. A small electrostatic stigmator unit and dedicated scanning coils were integrated into the column. The scan coils were wound directly around the objective lens iron core in order to reduce its size. Preliminary experimental images of a test grid specimen were obtained through the prototype finger-size column, demonstrating that it is in principle feasible.

Scanning Auger Electron Microscope

Data.gov (United States)

Federal Laboratory Consortium — A JEOL model 7830F field emission source, scanning Auger microscope.Specifications / Capabilities:Ultra-high vacuum (UHV), electron gun range from 0.1 kV to 25 kV,...

Photocathode Optimization for a Dynamic Transmission Electron Microscope: Final Report

Energy Technology Data Exchange (ETDEWEB)

Ellis, P; Flom, Z; Heinselman, K; Nguyen, T; Tung, S; Haskell, R; Reed, B W; LaGrange, T

2011-08-04

The Dynamic Transmission Electron Microscope (DTEM) team at Harvey Mudd College has been sponsored by LLNL to design and build a test setup for optimizing the performance of the DTEM's electron source. Unlike a traditional TEM, the DTEM achieves much faster exposure times by using photoemission from a photocathode to produce electrons for imaging. The DTEM team's work is motivated by the need to improve the coherence and current density of the electron cloud produced by the electron gun in order to increase the image resolution and contrast achievable by DTEM. The photoemission test setup is nearly complete and the team will soon complete baseline tests of electron gun performance. The photoemission laser and high voltage power supply have been repaired; the optics path for relaying the laser to the photocathode has been finalized, assembled, and aligned; the internal setup of the vacuum chamber has been finalized and mostly implemented; and system control, synchronization, and data acquisition has been implemented in LabVIEW. Immediate future work includes determining a consistent alignment procedure to place the laser waist on the photocathode, and taking baseline performance measurements of the tantalum photocathode. Future research will examine the performance of the electron gun as a function of the photoemission laser profile, the photocathode material, and the geometry and voltages of the accelerating and focusing components in the electron gun. This report presents the team's progress and outlines the work that remains.

Analytical electron microscope based on scanning transmission electron microscope with wavelength dispersive x-ray spectroscopy to realize highly sensitive elemental imaging especially for light elements

International Nuclear Information System (INIS)

Koguchi, Masanari; Tsuneta, Ruriko; Anan, Yoshihiro; Nakamae, Koji

2017-01-01

An analytical electron microscope based on the scanning transmission electron microscope with wavelength dispersive x-ray spectroscopy (STEM-WDX) to realize highly sensitive elemental imaging especially for light elements has been developed. In this study, a large-solid-angle multi-capillary x-rays lens with a focal length of 5 mm, long-time data acquisition (e.g. longer than 26 h), and a drift-free system made it possible to visualize boron-dopant images in a Si substrate at a detection limit of 0.2 atomic percent. (paper)

A high voltage test stand for electron gun qualification for LINACs

International Nuclear Information System (INIS)

Wanmode, Yashwant D.; Mulchandani, J.; Acharya, M.; Bhisikar, A.; Singh, H.G.; Shrivastava, Purushottam

2011-01-01

An electron gun lest stand has been developed at RRCAT. The test stand consists of a high voltage pulsed power supply, electron gun filament supply, grid supply, UHV system and electron gun current measurement system. Several electron guns developed indigenously were evaluated on this test stand. The shielding is provided for the electron gun set up. Electron gun tests can be tested upto 55 kV with pulse width of 15 microsecs and pulse repetition rates up to 200 Hz. The technical details of the subsystems are furnished and results of performance of the test stand have been reported in this paper. (author)

Successful application of Low Voltage Electron Microscopy to practical materials problems

International Nuclear Information System (INIS)

Bell, David C.; Mankin, Max; Day, Robert W.; Erdman, Natasha

2014-01-01

become the new mode of imaging for many electron microscopes, with the instrument being, in essence, tuned to extract all the information possible from each electron that transits the sample. - Highlights: • We show experimentally how different materials systems greatly benefit from low voltage high resolution microscopy using different acceleration voltages. • We suggest that below the incident energies of 40 kV the damage is mainly radiolitic, whereas at incident energies above 200 kV the knock-on damage and material sputtering will be the dominant effect. • Lower voltage imaging maintains the structure of the surrounding matrix of some materials during imaging while still allowing atomic resolution imaging. • We show that zeolites damage preferentially by ionization effects (radiolysis)

Electron microscopic observation at low temperature on superconductors

International Nuclear Information System (INIS)

Yokota, Yasuhiro; Hashimoto, Hatsujiro; Yoshida, Hiroyuki.

1991-01-01

The authors have observed superconducting materials with a high resolution electron microscope at liquid helium temperature. First, observation was carried out on Nb system intermetallic compounds such as Nb 3 Al and Nb 3 Sn of Al 5 type and Nb 3 Ge of 11 type at extremely low temperature. Next, the observation of high temperature superconductive ceramics in the state of superconductivity was attempted. In this paper, first the development of the liquid helium sample holder for a 400 kV electron microscope to realize the observation is reported. Besides, the sample holder of Gatan Co. and an extremely low temperature, high resolution electron microscope with a superconducting lens are described. The purpose of carrying out the electron microscope observation of superconductors at low temperature is the direct observation of the crystalline lattice image in the state of superconductivity. Also the structural transformation from tetragonal crystals to rhombic crystals in Al 5 type superconductors can be observed. The results of observation are reported. (K.I.)

Investigations in space-related molecular biology. [cryo-electron microscopic and diffraction studies on terrestrial and extraterrestrial specimens

Science.gov (United States)

Fernandez-Moran, H.; Pritzker, A. N.

1974-01-01

Improved instrumentation and preparation techniques for high resolution, high voltage cryo-electron microscopic and diffraction studies on terrestrial and extraterrestrial specimens are reported. Computer correlated ultrastructural and biochemical work on hydrated and dried cell membranes and related biological systems provided information on membrane organization, ice crystal formation and ordered water, RNA virus linked to cancer, lunar rock samples, and organometallic superconducting compounds. Apollo 11, 12, 14, and 15 specimens were analyzed

Characterization of quantum well structures using a photocathode electron microscope

Science.gov (United States)

Spencer, Michael G.; Scott, Craig J.

1989-01-01

Present day integrated circuits pose a challenge to conventional electronic and mechanical test methods. Feature sizes in the submicron and nanometric regime require radical approaches in order to facilitate electrical contact to circuits and devices being tested. In addition, microwave operating frequencies require careful attention to distributed effects when considering the electrical signal paths within and external to the device under test. An alternative testing approach which combines the best of electrical and optical time domain testing is presented, namely photocathode electron microscope quantitative voltage contrast (PEMQVC).

Designs for a quantum electron microscope

Energy Technology Data Exchange (ETDEWEB)

Kruit, P., E-mail: p.kruit@tudelft.nl [Department of Imaging Physics, Delft University of Technology, Lorentzweg 1, 2628CJ Delft (Netherlands); Hobbs, R.G.; Kim, C-S.; Yang, Y.; Manfrinato, V.R. [Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Hammer, J.; Thomas, S.; Weber, P. [Department of Physics, Friedrich Alexander University Erlangen-Nürnberg (FAU), Staudtstrasse 1, d-91058 Erlangen (Germany); Klopfer, B.; Kohstall, C.; Juffmann, T.; Kasevich, M.A. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Hommelhoff, P. [Department of Physics, Friedrich Alexander University Erlangen-Nürnberg (FAU), Staudtstrasse 1, d-91058 Erlangen (Germany); Berggren, K.K. [Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2016-05-15

One of the astounding consequences of quantum mechanics is that it allows the detection of a target using an incident probe, with only a low probability of interaction of the probe and the target. This ‘quantum weirdness’ could be applied in the field of electron microscopy to generate images of beam-sensitive specimens with substantially reduced damage to the specimen. A reduction of beam-induced damage to specimens is especially of great importance if it can enable imaging of biological specimens with atomic resolution. Following a recent suggestion that interaction-free measurements are possible with electrons, we now analyze the difficulties of actually building an atomic resolution interaction-free electron microscope, or “quantum electron microscope”. A quantum electron microscope would require a number of unique components not found in conventional transmission electron microscopes. These components include a coherent electron beam-splitter or two-state-coupler, and a resonator structure to allow each electron to interrogate the specimen multiple times, thus supporting high success probabilities for interaction-free detection of the specimen. Different system designs are presented here, which are based on four different choices of two-state-couplers: a thin crystal, a grating mirror, a standing light wave and an electro-dynamical pseudopotential. Challenges for the detailed electron optical design are identified as future directions for development. While it is concluded that it should be possible to build an atomic resolution quantum electron microscope, we have also identified a number of hurdles to the development of such a microscope and further theoretical investigations that will be required to enable a complete interpretation of the images produced by such a microscope. - Highlights: • Quantum electron microscopy has the potential of reducing radiation damage. • QEM requires a fraction of the electron wave to pass through the sample

Designs for a quantum electron microscope

International Nuclear Information System (INIS)

Kruit, P.; Hobbs, R.G.; Kim, C-S.; Yang, Y.; Manfrinato, V.R.; Hammer, J.; Thomas, S.; Weber, P.; Klopfer, B.; Kohstall, C.; Juffmann, T.; Kasevich, M.A.; Hommelhoff, P.; Berggren, K.K.

2016-01-01

One of the astounding consequences of quantum mechanics is that it allows the detection of a target using an incident probe, with only a low probability of interaction of the probe and the target. This ‘quantum weirdness’ could be applied in the field of electron microscopy to generate images of beam-sensitive specimens with substantially reduced damage to the specimen. A reduction of beam-induced damage to specimens is especially of great importance if it can enable imaging of biological specimens with atomic resolution. Following a recent suggestion that interaction-free measurements are possible with electrons, we now analyze the difficulties of actually building an atomic resolution interaction-free electron microscope, or “quantum electron microscope”. A quantum electron microscope would require a number of unique components not found in conventional transmission electron microscopes. These components include a coherent electron beam-splitter or two-state-coupler, and a resonator structure to allow each electron to interrogate the specimen multiple times, thus supporting high success probabilities for interaction-free detection of the specimen. Different system designs are presented here, which are based on four different choices of two-state-couplers: a thin crystal, a grating mirror, a standing light wave and an electro-dynamical pseudopotential. Challenges for the detailed electron optical design are identified as future directions for development. While it is concluded that it should be possible to build an atomic resolution quantum electron microscope, we have also identified a number of hurdles to the development of such a microscope and further theoretical investigations that will be required to enable a complete interpretation of the images produced by such a microscope. - Highlights: • Quantum electron microscopy has the potential of reducing radiation damage. • QEM requires a fraction of the electron wave to pass through the sample

Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

Science.gov (United States)

Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

2017-11-01

The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope

Science.gov (United States)

2013-01-01

Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current–voltage properties. We report accurate on-top imaging and I–V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I–V properties with a very small spread in measured values compared to standard techniques. PMID:24059470

Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

Science.gov (United States)

Timm, Rainer; Persson, Olof; Engberg, David L J; Fian, Alexander; Webb, James L; Wallentin, Jesper; Jönsson, Andreas; Borgström, Magnus T; Samuelson, Lars; Mikkelsen, Anders

2013-11-13

Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.

Electron-beam-induced-current and active secondary-electron voltage-contrast with aberration-corrected electron probes

Energy Technology Data Exchange (ETDEWEB)

Han, Myung-Geun, E-mail: mghan@bnl.gov [Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, NY 11973 (United States); Garlow, Joseph A. [Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, NY 11973 (United States); Materials Science and Engineering Department, Stony Brook University, Stony Brook, NY 11794 (United States); Marshall, Matthew S.J.; Tiano, Amanda L. [Department of Chemistry, Stony Brook University, Stony Brook, NY 11974 (United States); Wong, Stanislaus S. [Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, NY 11973 (United States); Department of Chemistry, Stony Brook University, Stony Brook, NY 11974 (United States); Cheong, Sang-Wook [Department of Physics and Astronomy, Rutgers Center for Emergent Materials, Rutgers University, Piscataway, NJ 08854 (United States); Walker, Frederick J.; Ahn, Charles H. [Department of Applied Physics and Center for Research on Interface Structures and Phenomena, Yale University, New Haven, CT 06520 (United States); Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06520 (United States); Zhu, Yimei [Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, NY 11973 (United States)

2017-05-15

Highlights: • Electron-beam-induced-current (EBIC) and active secondary-electron voltage-contrast (SE-VC) are demonstrated in STEM mode combined with in situ electrical biasing in a TEM. • Electrostatic potential maps in ferroelectric thin films, multiferroic nanowires, and single crystals obtained by off-axis electron holography were compared with EBIC and SE-VC data. • Simultaneous EBIC and active SE-VC performed with atomic resolution STEM are demonstrated. - Abstract: The ability to map out electrostatic potentials in materials is critical for the development and the design of nanoscale electronic and spintronic devices in modern industry. Electron holography has been an important tool for revealing electric and magnetic field distributions in microelectronics and magnetic-based memory devices, however, its utility is hindered by several practical constraints, such as charging artifacts and limitations in sensitivity and in field of view. In this article, we report electron-beam-induced-current (EBIC) and secondary-electron voltage-contrast (SE-VC) with an aberration-corrected electron probe in a transmission electron microscope (TEM), as complementary techniques to electron holography, to measure electric fields and surface potentials, respectively. These two techniques were applied to ferroelectric thin films, multiferroic nanowires, and single crystals. Electrostatic potential maps obtained by off-axis electron holography were compared with EBIC and SE-VC to show that these techniques can be used as a complementary approach to validate quantitative results obtained from electron holography analysis.

Investigations and characterization of the microstructure of special ceramic materials using the high-resolution electron microscope

International Nuclear Information System (INIS)

Kirn, M.

1979-01-01

The possibilities to characterize phases and microstructures by direct lattice imaging are indicated in the following work. Ceramic materials are particularly suitable for this as these exhibit a high mechanical stability in the investigation in the transmission electron microscope. First of all the fundamentals of the high-resolution electron microscopy are introduced and the various resulting possibilities to characterize microstructures are presented. A report then follows on experimental observations on undisturbed crystals of special ceramics on a Si 3 N 4 basis. Furthermore, it is shown that the high-resolution electron microscope provides valuable contributions to the determination of structure, in particular of twin variants. Finally, revealing information on the structure of the interfaces was obtained with the help of high-resolution electron microscopy. (orig./IHOE) [de

Ion Back-Bombardment of GaAs Photocathodes Inside DC High Voltage Electron Guns

CERN Document Server

Grames, Joseph M; Brittian, Joshua; Charles, Daniel; Clark, Jim; Hansknecht, John; Lynn Stutzman, Marcy; Poelker, Matthew; Surles-Law, Kenneth E

2005-01-01

The primary limitation for sustained high quantum efficiency operation of GaAs photocathodes inside DC high voltage electron guns is ion back-bombardment of the photocathode. This process results from ionization of residual gas within the cathode/anode gap by the extracted electron beam, which is subsequently accelerated backwards to the photocathode. The damage mechanism is believed to be either destruction of the negative electron affinity condition at the surface of the photocathode or damage to the crystal structure by implantation of the bombarding ions. This work characterizes ion formation within the anode/cathode gap for gas species typical of UHV vacuum chambers (i.e., hydrogen, carbon monoxide and methane). Calculations and simulations are performed to determine the ion trajectories and stopping distance within the photocathode material. The results of the simulations are compared with test results obtained using a 100 keV DC high voltage GaAs photoemission gun and beamline at currents up to 10 mA D...

HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.ELECTRON BEAM TECHNOLOGY - INNOVATIVE TECHNOLOGY EVALUATION REPORT

Science.gov (United States)

This report evaluates a high-voltage electron beam (E-beam) technology's ability to destroy volatile organic compounds (VOCs) and other contaminants present in liquid wastes. Specifically, this report discusses performance and economic data from a Superfund Innovative Technology...

Particle flows to shape and voltage surface discontinuities in the electron sheath surrounding a high voltage solar array in LEO

Science.gov (United States)

Metz, Roger N.

1991-01-01

This paper discusses the numerical modeling of electron flows from the sheath surrounding high positively biased objects in LEO (Low Earth Orbit) to regions of voltage or shape discontinuity on the biased surfaces. The sheath equations are derived from the Two-fluid, Warm Plasma Model. An equipotential corner and a plane containing strips of alternating voltage bias are treated in two dimensions. A self-consistent field solution of the sheath equations is outlined and is pursued through one cycle. The electron density field is determined by numerical solution of Poisson's equation for the electrostatic potential in the sheath using the NASCAP-LEO relation between electrostatic potential and charge density. Electron flows are calculated numerically from the electron continuity equation. Magnetic field effects are not treated.

Control and protection system for an electron injector installed in a high-voltage terminal

International Nuclear Information System (INIS)

Martin, D.; Radu, A.; Baciu, G.; Grigore, D.

1979-01-01

The basic principles of operation of the control and protection system for an electron accelerator gun are described. The electron gun parameters are independently controlled by using four special secondary windings of the high-voltage transformer providing the accelerating voltage. Four groups of thyristor ac regulators employing phase control are connected so as to provide independent adjustment of each parameter of the gun. The power controller of modular construction has a single-phase supply from the 50 Hz 220 V mains. (orig.)

A fluorescence scanning electron microscope

International Nuclear Information System (INIS)

Kanemaru, Takaaki; Hirata, Kazuho; Takasu, Shin-ichi; Isobe, Shin-ichiro; Mizuki, Keiji; Mataka, Shuntaro; Nakamura, Kei-ichiro

2009-01-01

Fluorescence techniques are widely used in biological research to examine molecular localization, while electron microscopy can provide unique ultrastructural information. To date, correlative images from both fluorescence and electron microscopy have been obtained separately using two different instruments, i.e. a fluorescence microscope (FM) and an electron microscope (EM). In the current study, a scanning electron microscope (SEM) (JEOL JXA8600 M) was combined with a fluorescence digital camera microscope unit and this hybrid instrument was named a fluorescence SEM (FL-SEM). In the labeling of FL-SEM samples, both Fluolid, which is an organic EL dye, and Alexa Fluor, were employed. We successfully demonstrated that the FL-SEM is a simple and practical tool for correlative fluorescence and electron microscopy.

Sharing of secondary electrons by in-lens and out-lens detector in low-voltage scanning electron microscope equipped with immersion lens.

Science.gov (United States)

Kumagai, Kazuhiro; Sekiguchi, Takashi

2009-03-01

To understand secondary electron (SE) image formation with in-lens and out-lens detector in low-voltage scanning electron microscopy (LV-SEM), we have evaluated SE signals of an in-lens and an out-lens detector in LV-SEM. From the energy distribution spectra of SEs with various boosting voltages of the immersion lens system, we revealed that the electrostatic field of the immersion lens mainly collects electrons with energy lower than 40eV, acting as a low-pass filter. This effect is also observed as a contrast change in LV-SEM images taken by in-lens and out-lens detectors.

Critical voltage effects in electron channeling patterns

International Nuclear Information System (INIS)

Farrow, R.C.

1984-01-01

Electron channeling patterns were used to study critical voltage effects in the metals molybdenum and tungsten. The purpose was to characterize both theoretically and experimentally how a critical voltage will affect the channeling pattern line shapes. The study focused on the second order critical voltage that results from the degeneracy between the Bloch wave states of the (110) and (220) reflections. Theoretical (110) series electron channeling pattern line profiles were calculated using the dynamical theory of Hirsch and Humphreys (1970). A 10 beam dynamical electron diffraction calculation was performed (using complex Fourier lattice potentials) to generate Bloch wave coefficients, excitation amplitudes, and absorption coefficients needed for determining backscattering coefficients and subsequent backscattered electron intensities. The theoretical model is applicable to electron diffraction at all energies since no high energy approximation or perturbation method was used

Mechanism of formation of a zone without vacancy pores along a surface under electron irradiation of a metal in the high-volt electron microscope

International Nuclear Information System (INIS)

Golubov, S.I.; Konobeev, Yu.V.; Ryabov, V.A.

1981-01-01

Formation mechanism of zones free of vacancy pores near the vacant surface of a metal preliminary irradiated at a high neutron dose when irradiating with electrons in a high-voltage electron microscope has been suggested. It was assumed to explain experimentally observed values of width and time of such zone formation that interstitial atoms are reflected from foil surface while boundary serves as an ideal sink for the vacancies. The carried out calculation of stationary equations of vacancy and interstitial diffusion with the mentioned boundary condition has shown that determination of a stable zone width is possible only in assumption on a variable in a depth of dislocation density. Theoretical evaluations of a zone width being in good agreement with an experiment and with the results of numerical calculations have been obtained in negligence of recombination of point defects as well as for the case of total reflection of interstitials. Discussed are different mechanisms of weak capture of proper interstitial atoms diffusing to it with the metal surface [ru

High resolution and high voltage electron microscopy at the University of California, Berkeley

International Nuclear Information System (INIS)

Thomas, G.; Westmacott, K.H.

1978-01-01

Recent applications of high-resolution and high-voltage techniques at Berkely are described, using 100-kV TEMs and a standard 650-keV HVEM: grain boundary precipitation in Al--Zn, lattice imaging of grain boundaries in ceramics, steels, phase transitions and magnetic properties of ferrites, lattice defects, precipitation in Al--Si and behavior of interstitial dislocations under electron irradiation, effect of oxide films on loop formation in Al--Mg, and polytypism in magnesium Sialon. 13 refs. 12 figs

Selective scanning tunnelling microscope electron-induced reactions of single biphenyl molecules on a Si(100) surface.

Science.gov (United States)

Riedel, Damien; Bocquet, Marie-Laure; Lesnard, Hervé; Lastapis, Mathieu; Lorente, Nicolas; Sonnet, Philippe; Dujardin, Gérald

2009-06-03

Selective electron-induced reactions of individual biphenyl molecules adsorbed in their weakly chemisorbed configuration on a Si(100) surface are investigated by using the tip of a low-temperature (5 K) scanning tunnelling microscope (STM) as an atomic size source of electrons. Selected types of molecular reactions are produced, depending on the polarity of the surface voltage during STM excitation. At negative surface voltages, the biphenyl molecule diffuses across the surface in its weakly chemisorbed configuration. At positive surface voltages, different types of molecular reactions are activated, which involve the change of adsorption configuration from the weakly chemisorbed to the strongly chemisorbed bistable and quadristable configurations. Calculated reaction pathways of the molecular reactions on the silicon surface, using the nudge elastic band method, provide evidence that the observed selectivity as a function of the surface voltage polarity cannot be ascribed to different activation energies. These results, together with the measured threshold surface voltages and the calculated molecular electronic structures via density functional theory, suggest that the electron-induced molecular reactions are driven by selective electron detachment (oxidation) or attachment (reduction) processes.

Field Emission Scanning Electron Microscope (FESEM) Facility in BTI

International Nuclear Information System (INIS)

Cik Rohaida Che Hak; Foo, C.T.; Nor Azillah Fatimah Othman

2015-01-01

Field Emission Scanning Electron Microscope (FE-SEM) provides ultra-high resolution imaging at low accelerating voltages and small working distances. The GeminisSEM 500, a new FESEM imaging facility will be installed soon in MTEC, BTI. It provides resolution of the images is as low as 0.6 nm at 15 kV and 1.2 nm at 1 kV, allowing examination of the top surface of nano powders, nano film and nano fiber in the wide range of applications such as mineralogy, ceramics, polymer, metallurgy, electronic devices, chemistry, physics and life sciences. This system is equipped with several detectors to detect various signals such as secondary electrons (SE) detector for topographic information and back-scattered electrons (BSE) detector for materials composition contrast. Energy dispersive x-ray spectroscopy (EDS) with detector energy resolution of < 129 eV and detection limit in the range of 1000-3000 ppm coupled with FE-SEM is used to determine the chemical composition of micro-features including boron (B) to uranium (U). Wavelength dispersive x-ray spectroscopy (WDS) which has detector resolution of 2-20 eV and detection limit of 30-300 ppm coupled with FE-SEM is used to detect elements that cannot be resolved with EDS. The ultra-high resolution imaging combined with the high sensitivity WDS helps to resolve the thorium and rare earth elemental analysis. (author)

Measuring voltage transients with an ultrafast scanning tunneling microscope

DEFF Research Database (Denmark)

Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

1997-01-01

circuit, where the tunneling tip is directly connected to the current amplifier of the scanning tunneling microscope, this dependence is eliminated. Ail results can be explained with coupling through the geometrical capacitance of the tip-electrode junction. By illuminating the current......We use an ultrafast scanning tunneling microscope to resolve propagating voltage transients in space and time. We demonstrate that the previously observed dependence of the transient signal amplitude on the tunneling resistance was only caused by the electrical sampling circuit. With a modified...

Vibrational spectroscopy in the electron microscope.

Science.gov (United States)

Krivanek, Ondrej L; Lovejoy, Tracy C; Dellby, Niklas; Aoki, Toshihiro; Carpenter, R W; Rez, Peter; Soignard, Emmanuel; Zhu, Jiangtao; Batson, Philip E; Lagos, Maureen J; Egerton, Ray F; Crozier, Peter A

2014-10-09

Vibrational spectroscopies using infrared radiation, Raman scattering, neutrons, low-energy electrons and inelastic electron tunnelling are powerful techniques that can analyse bonding arrangements, identify chemical compounds and probe many other important properties of materials. The spatial resolution of these spectroscopies is typically one micrometre or more, although it can reach a few tens of nanometres or even a few ångströms when enhanced by the presence of a sharp metallic tip. If vibrational spectroscopy could be combined with the spatial resolution and flexibility of the transmission electron microscope, it would open up the study of vibrational modes in many different types of nanostructures. Unfortunately, the energy resolution of electron energy loss spectroscopy performed in the electron microscope has until now been too poor to allow such a combination. Recent developments that have improved the attainable energy resolution of electron energy loss spectroscopy in a scanning transmission electron microscope to around ten millielectronvolts now allow vibrational spectroscopy to be carried out in the electron microscope. Here we describe the innovations responsible for the progress, and present examples of applications in inorganic and organic materials, including the detection of hydrogen. We also demonstrate that the vibrational signal has both high- and low-spatial-resolution components, that the first component can be used to map vibrational features at nanometre-level resolution, and that the second component can be used for analysis carried out with the beam positioned just outside the sample--that is, for 'aloof' spectroscopy that largely avoids radiation damage.

In situ transmission electron microscope studies of ion irradiation-induced and irradiation-enhanced phase changes

International Nuclear Information System (INIS)

Allen, C.W.

1992-01-01

Motivated at least initially by materials needs for nuclear reactor development, extensive irradiation effects studies employing transmission electron microscopes (TEM) have been performed for several decades, involving irradiation-induced and irradiation-enhanced microstructural changes, including phase transformations such as precipitation, dissolution, crystallization, amorphization, and order-disorder phenomena. From the introduction of commercial high voltage electron microscopes (HVEM) in the mid-1960s, studies of electron irradiation effects have constituted a major aspect of HVEM application in materials science. For irradiation effects studies two additional developments have had particularly significant impact; the development of TEM specimen holder sin which specimen temperature can be controlled in the range 10-2200 K and the interfacing of ion accelerators which allows in situ TEM studies of irradiation effects and the ion beam modification of materials within this broad temperature range. This paper treats several aspects of in situ studies of electron and ion beam-induced and enhanced phase changes and presents two case studies involving in situ experiments performed in an HVEM to illustrate the strategies of such an approach of the materials research of irradiation effects

Electron microscopy of boron carbide before and after electron irradiation

International Nuclear Information System (INIS)

Stoto, T.; Zuppiroli, L.; Beauvy, M.; Athanassiadis, T.

1984-06-01

The microstructure of boron carbide has been studied by electron microscopy and related to the composition of the material. After electron irradiations in an usual transmission electron microscope and in a high voltage electron microscope at different temperatures and fluxes no change of these microstructures have been observed but a sputtering of the surface of the samples, which has been studied quantitatively [fr

TiN coated aluminum electrodes for DC high voltage electron guns

International Nuclear Information System (INIS)

Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

2015-01-01

Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached −225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ∼22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes

Wide-range tunable magnetic lens for tabletop electron microscope

International Nuclear Information System (INIS)

Chang, Wei-Yu; Chen, Fu-Rong

2016-01-01

A tabletop scanning electron microscope (SEM) utilizes permanent magnets as condenser lenses to minimize its size, but this sacrifices the tunability of condenser lenses such that a tabletop system can only be operated with a fixed accelerating voltage. In contrast, the traditional condenser lens utilizes an electromagnetic coil to adjust the optical properties, but the size of the electromagnetic lens is inevitably larger. Here, we propose a tunable condenser lens for a tabletop SEM that uses a combination of permanent magnets and electromagnetic coils. The overall dimensions of the newly designed lens are the same as the original permanent magnet lens, but the new lens allows the tabletop SEM to be operated at different accelerating voltages between 1 kV and 15 kV. - Highlights: • A compact condenser lens combines both permanent magnet and coils. • A tunable lens is designed to keep the same focal point for voltage 1 to 15 kV. • A miniature tunable lens which can directly fit into tabletop SEM.

Wide-range tunable magnetic lens for tabletop electron microscope

Energy Technology Data Exchange (ETDEWEB)

Chang, Wei-Yu; Chen, Fu-Rong, E-mail: fchen1@me.com

2016-12-15

A tabletop scanning electron microscope (SEM) utilizes permanent magnets as condenser lenses to minimize its size, but this sacrifices the tunability of condenser lenses such that a tabletop system can only be operated with a fixed accelerating voltage. In contrast, the traditional condenser lens utilizes an electromagnetic coil to adjust the optical properties, but the size of the electromagnetic lens is inevitably larger. Here, we propose a tunable condenser lens for a tabletop SEM that uses a combination of permanent magnets and electromagnetic coils. The overall dimensions of the newly designed lens are the same as the original permanent magnet lens, but the new lens allows the tabletop SEM to be operated at different accelerating voltages between 1 kV and 15 kV. - Highlights: • A compact condenser lens combines both permanent magnet and coils. • A tunable lens is designed to keep the same focal point for voltage 1 to 15 kV. • A miniature tunable lens which can directly fit into tabletop SEM.

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

Science.gov (United States)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; Wang, Y.; Poelker, M.

2017-09-01

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain work, we describe a centrifugal barrel-polishing technique commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (˜11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.

An electron microscope for the aberration-corrected era

Energy Technology Data Exchange (ETDEWEB)

Krivanek, O.L. [Nion Co., 1102 8th Street, Kirkland, WA 98033 (United States)], E-mail: krivanek.ondrej@gmail.com; Corbin, G.J.; Dellby, N.; Elston, B.F.; Keyse, R.J.; Murfitt, M.F.; Own, C.S.; Szilagyi, Z.S.; Woodruff, J.W. [Nion Co., 1102 8th Street, Kirkland, WA 98033 (United States)

2008-02-15

Improved resolution made possible by aberration correction has greatly increased the demands on the performance of all parts of high-end electron microscopes. In order to meet these demands, we have designed and built an entirely new scanning transmission electron microscope (STEM). The microscope includes a flexible illumination system that allows the properties of its probe to be changed on-the-fly, a third-generation aberration corrector which corrects all geometric aberrations up to fifth order, an ultra-responsive yet stable five-axis sample stage, and a flexible configuration of optimized detectors. The microscope features many innovations, such as a modular column assembled from building blocks that can be stacked in almost any order, in situ storage and cleaning facilities for up to five samples, computer-controlled loading of samples into the column, and self-diagnosing electronics. The microscope construction is described, and examples of its capabilities are shown.

An electron microscope for the aberration-corrected era

International Nuclear Information System (INIS)

Krivanek, O.L.; Corbin, G.J.; Dellby, N.; Elston, B.F.; Keyse, R.J.; Murfitt, M.F.; Own, C.S.; Szilagyi, Z.S.; Woodruff, J.W.

2008-01-01

Improved resolution made possible by aberration correction has greatly increased the demands on the performance of all parts of high-end electron microscopes. In order to meet these demands, we have designed and built an entirely new scanning transmission electron microscope (STEM). The microscope includes a flexible illumination system that allows the properties of its probe to be changed on-the-fly, a third-generation aberration corrector which corrects all geometric aberrations up to fifth order, an ultra-responsive yet stable five-axis sample stage, and a flexible configuration of optimized detectors. The microscope features many innovations, such as a modular column assembled from building blocks that can be stacked in almost any order, in situ storage and cleaning facilities for up to five samples, computer-controlled loading of samples into the column, and self-diagnosing electronics. The microscope construction is described, and examples of its capabilities are shown

A Protection System of High Voltage Generator Electron Acceleration foran Electron Beam Machine 500 kV/10 mA

International Nuclear Information System (INIS)

Prajitno; Sudiyanto; Djaziman

2000-01-01

Hardwired electronic circuit of protection system to prevent high voltagegenerator EBM have been made. The protection system consists of processparameters such as safety parameter, dynamic logic circuits and interlockrelay drive circuits. Safety parameters using transducer which is factorymade so that the accuracy and reliability could be controlled. A good resultof electronic circuit has been tested which cover: water flow and temperaturemonitoring, grid current, anode current, anode voltage and logic control. Therange of monitoring temperature from 30 o C to 100 o C with output voltagefrom 1.47 V to 5.38 V. The voltage output of water flow monitoring is 0.083 Vto 3.391 V which is equivalent to 1.5 - 30 l/min. Response time of the logiccontrol about 10 ms. By using design and construction of protection system,have been through about the security aspect of high voltage generatoroperation and also system will give early warning if the disturbance andabnormal operation occurred. (author)

THREE-DIMENSIONAL OBSERVATIONS ON THICK BIOLOGICAL SPECIMENS BY HIGH VOLTAGE ELECTRON MICROSCOPY

Directory of Open Access Journals (Sweden)

Tetsuji Nagata

2011-05-01

Full Text Available Thick biological specimens prepared as whole mount cultured cells or thick sections from embedded tissues were stained with histochemical reactions, such as thiamine pyrophosphatase, glucose-6-phosphatase, cytochrome oxidase, acid phosphatase, DAB reactions and radioautography, to observe 3-D ultrastructures of cell organelles producing stereo-pairs by high voltage electron microscopy at accerelating voltages of 400-1000 kV. The organelles demonstrated were Golgi apparatus, endoplasmic reticulum, mitochondria, lysosomes, peroxisomes, pinocytotic vesicles and incorporations of radioactive compounds. As the results, those cell organelles were observed 3- dimensionally and the relative relationships between these organelles were demonstrated.

Atmospheric scanning electron microscope for correlative microscopy.

Science.gov (United States)

Morrison, Ian E G; Dennison, Clare L; Nishiyama, Hidetoshi; Suga, Mitsuo; Sato, Chikara; Yarwood, Andrew; O'Toole, Peter J

2012-01-01

The JEOL ClairScope is the first truly correlative scanning electron and optical microscope. An inverted scanning electron microscope (SEM) column allows electron images of wet samples to be obtained in ambient conditions in a biological culture dish, via a silicon nitride film window in the base. A standard inverted optical microscope positioned above the dish holder can be used to take reflected light and epifluorescence images of the same sample, under atmospheric conditions that permit biochemical modifications. For SEM, the open dish allows successive staining operations to be performed without moving the holder. The standard optical color camera used for fluorescence imaging can be exchanged for a high-sensitivity monochrome camera to detect low-intensity fluorescence signals, and also cathodoluminescence emission from nanophosphor particles. If these particles are applied to the sample at a suitable density, they can greatly assist the task of perfecting the correlation between the optical and electron images. Copyright © 2012 Elsevier Inc. All rights reserved.

Development of Scanning Ultrafast Electron Microscope Capability.

Energy Technology Data Exchange (ETDEWEB)

Collins, Kimberlee Chiyoko [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Talin, Albert Alec [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Chandler, David W. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Michael, Joseph R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2016-11-01

Modern semiconductor devices rely on the transport of minority charge carriers. Direct examination of minority carrier lifetimes in real devices with nanometer-scale features requires a measurement method with simultaneously high spatial and temporal resolutions. Achieving nanometer spatial resolutions at sub-nanosecond temporal resolution is possible with pump-probe methods that utilize electrons as probes. Recently, a stroboscopic scanning electron microscope was developed at Caltech, and used to study carrier transport across a Si p-n junction [ 1 , 2 , 3 ] . In this report, we detail our development of a prototype scanning ultrafast electron microscope system at Sandia National Laboratories based on the original Caltech design. This effort represents Sandia's first exploration into ultrafast electron microscopy.

High-voltage engineering and testing

CERN Document Server

Ryan, Hugh M

2013-01-01

This 3rd edition of High Voltage Engineering Testing describes strategic developments in the field and reflects on how they can best be managed. All the key components of high voltage and distribution systems are covered including electric power networks, UHV and HV. Distribution systems including HVDC and power electronic systems are also considered.

Spectroscopy of electron irradiated polymers in electron microscope

International Nuclear Information System (INIS)

Faraj, S.H.; Salih, S.M.

1981-01-01

The damage induced by energetic electrons in the course of irradiation of polymers in a transmission electron microscope was investigated spectroscopically. Damage on the molecular level has been detected at very low exposure doses. These effects have been induced by electron doses less than that received by the specimen when it is situated at its usual place of the specimen stage in the electron microscope by a factor of 1,000. (author)

The energy spectrum of the 'runaway' electrons from a high voltage pulsed discharge

International Nuclear Information System (INIS)

Ruset, C.

1985-01-01

Some experimental results are presented on the influence of the pressure upon the energy spectrum of the runaway electrons generated into a pulsed high voltage argon discharge. These electrons enter a state of continuous acceleration between two collisions with rapidly increasing free path. The applied discharge current varies from 10 to 300 A, the pulse time is about 800 ns. Relativistic effects are taken into consideration. Theoretical explanation is based on the pnenomenon of electron spreading on plasma oscillations. (D.Gy.)

A high-stability scanning tunneling microscope achieved by an isolated tiny scanner with low voltage imaging capability

Science.gov (United States)

Wang, Qi; Hou, Yubin; Wang, Junting; Lu, Qingyou

2013-11-01

We present a novel homebuilt scanning tunneling microscope (STM) with high quality atomic resolution. It is equipped with a small but powerful GeckoDrive piezoelectric motor which drives a miniature and detachable scanning part to implement coarse approach. The scanning part is a tiny piezoelectric tube scanner (industry type: PZT-8, whose d31 coefficient is one of the lowest) housed in a slightly bigger polished sapphire tube, which is riding on and spring clamped against the knife edges of a tungsten slot. The STM so constructed shows low back-lashing and drifting and high repeatability and immunity to external vibrations. These are confirmed by its low imaging voltages, low distortions in the spiral scanned images, and high atomic resolution quality even when the STM is placed on the ground of the fifth floor without any external or internal vibration isolation devices.

A high-stability scanning tunneling microscope achieved by an isolated tiny scanner with low voltage imaging capability

International Nuclear Information System (INIS)

Wang, Qi; Wang, Junting; Lu, Qingyou; Hou, Yubin

2013-01-01

We present a novel homebuilt scanning tunneling microscope (STM) with high quality atomic resolution. It is equipped with a small but powerful GeckoDrive piezoelectric motor which drives a miniature and detachable scanning part to implement coarse approach. The scanning part is a tiny piezoelectric tube scanner (industry type: PZT-8, whose d 31 coefficient is one of the lowest) housed in a slightly bigger polished sapphire tube, which is riding on and spring clamped against the knife edges of a tungsten slot. The STM so constructed shows low back-lashing and drifting and high repeatability and immunity to external vibrations. These are confirmed by its low imaging voltages, low distortions in the spiral scanned images, and high atomic resolution quality even when the STM is placed on the ground of the fifth floor without any external or internal vibration isolation devices

A high-stability scanning tunneling microscope achieved by an isolated tiny scanner with low voltage imaging capability.

Science.gov (United States)

Wang, Qi; Hou, Yubin; Wang, Junting; Lu, Qingyou

2013-11-01

We present a novel homebuilt scanning tunneling microscope (STM) with high quality atomic resolution. It is equipped with a small but powerful GeckoDrive piezoelectric motor which drives a miniature and detachable scanning part to implement coarse approach. The scanning part is a tiny piezoelectric tube scanner (industry type: PZT-8, whose d31 coefficient is one of the lowest) housed in a slightly bigger polished sapphire tube, which is riding on and spring clamped against the knife edges of a tungsten slot. The STM so constructed shows low back-lashing and drifting and high repeatability and immunity to external vibrations. These are confirmed by its low imaging voltages, low distortions in the spiral scanned images, and high atomic resolution quality even when the STM is placed on the ground of the fifth floor without any external or internal vibration isolation devices.

Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes

International Nuclear Information System (INIS)

Rau, E. I.; Orlikovskiy, N. A.; Ivanova, E. S.

2012-01-01

A new highly efficient design for semiconductor detectors of intermediate-energy electrons (1–50 keV) for application in scanning electron microscopes is proposed. Calculations of the response function of advanced detectors and control experiments show that the efficiency of the developed devices increases on average twofold, which is a significant positive factor in the operation of modern electron microscopes in the mode of low currents and at low primary electron energies.

Inductive voltage adder (IVA) for submillimeter radius electron beam

International Nuclear Information System (INIS)

Mazarakis, M.G.; Poukey, J.W.; Maenchen, J.E.

1996-01-01

The authors have already demonstrated the utility of inductive voltage adder accelerators for production of small-size electron beams. In this approach, the inductive voltage adder drives a magnetically immersed foilless diode to produce high-energy (10--20 MeV), high-brightness pencil electron beams. This concept was first demonstrated with the successful experiments which converted the linear induction accelerator RADLAC II into an IVA fitted with a small 1-cm radius cathode magnetically immersed foilless diode (RADLAC II/SMILE). They present here first validations of extending this idea to mm-scale electron beams using the SABRE and HERMES-III inductive voltage adders as test beds. The SABRE experiments are already completed and have produced 30-kA, 9-MeV electron beams with envelope diameter of 1.5-mm FWHM. The HERMES-III experiments are currently underway

Operation Manual of the high voltage generator of the Pelletron electron accelerator

International Nuclear Information System (INIS)

Hernandez M, V.; Lopez V, H.; Alba P, U.

1988-04-01

The first version of a manual to operate the generator of high voltage generator of the Pelletron electron accelerator built in the ININ is presented. Since this generator has several components and/or elements, the one manual present has the purpose that the armed one or maintenance of anyone on its parts, is carried out in an orderly and efficient way. (Author)

Analytical Electron Microscope

Data.gov (United States)

Federal Laboratory Consortium — The Titan 80-300 is a transmission electron microscope (TEM) equipped with spectroscopic detectors to allow chemical, elemental, and other analytical measurements to...

An ion-sputtering gun to clean crystal surfaces in-situ in an ultra-high-vacuum electron microscope

International Nuclear Information System (INIS)

Morita, Etsuo; Takayanagi, Kunio; Kobayashi, Kunio; Yagi, Katsumichi; Honjo, Goro

1980-01-01

The design and performance of an ion-sputtering gun for cleaning crystal surfaces in-situ in an ultra-high-vacuum electron microscope are reported. The electron microscopic aspects of ion-bombardment damage to ionic magnesium oxide, covalent germanium and silicon, and metallic gold and copper crystals, and the effects of annealing after and during sputtering are described. The growth of various kinds of films deposited in-situ on crystals cleaned by ion-sputtering are described and discussed. (author)

Reconstruction of an Non-Monochromatically Illuminated Object Imaged through an Electron Microscope with a Fluctuating Electromagnetic Field

NARCIS (Netherlands)

Hoenders, B.J.

1975-01-01

It is shown that a weak phase object imaged by an electron microscope within the presence of instabilities of the lense currents and the acceleration voltage, fluctuating electromagnetic field, can be reconstructed from the intensity distribution in the image plane. Perfectly incoherent illumination

Comparative study of image contrast in scanning electron microscope and helium ion microscope.

Science.gov (United States)

O'Connell, R; Chen, Y; Zhang, H; Zhou, Y; Fox, D; Maguire, P; Wang, J J; Rodenburg, C

2017-12-01

Images of Ga + -implanted amorphous silicon layers in a 110 n-type silicon substrate have been collected by a range of detectors in a scanning electron microscope and a helium ion microscope. The effects of the implantation dose and imaging parameters (beam energy, dwell time, etc.) on the image contrast were investigated. We demonstrate a similar relationship for both the helium ion microscope Everhart-Thornley and scanning electron microscope Inlens detectors between the contrast of the images and the Ga + density and imaging parameters. These results also show that dynamic charging effects have a significant impact on the quantification of the helium ion microscope and scanning electron microscope contrast. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Energy dispersive X-ray analysis in the electron microscope

CERN Document Server

Bell, DC

2003-01-01

This book provides an in-depth description of x-ray microanalysis in the electron microscope. It is sufficiently detailed to ensure that novices will understand the nuances of high-quality EDX analysis. Includes information about hardware design as well as the physics of x-ray generation, absorption and detection, and most post-detection data processing. Details on electron optics and electron probe formation allow the novice to make sensible adjustments to the electron microscope in order to set up a system which optimises analysis. It also helps the reader determine which microanalytical me

High-voltage CMOS detectors

International Nuclear Information System (INIS)

Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

2016-01-01

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

High-voltage CMOS detectors

Energy Technology Data Exchange (ETDEWEB)

Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

2016-07-11

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

Prediction of breakdown voltages in novel gases for high voltage insulation

International Nuclear Information System (INIS)

Koch, M.

2015-01-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

High Efficiency Power Converter for Low Voltage High Power Applications

DEFF Research Database (Denmark)

Nymand, Morten

The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...

18/20 T high magnetic field scanning tunneling microscope with fully low voltage operability, high current resolution, and large scale searching ability.

Science.gov (United States)

Li, Quanfeng; Wang, Qi; Hou, Yubin; Lu, Qingyou

2012-04-01

We present a home-built 18/20 T high magnetic field scanning tunneling microscope (STM) featuring fully low voltage (lower than ±15 V) operability in low temperatures, large scale searching ability, and 20 fA high current resolution (measured by using a 100 GOhm dummy resistor to replace the tip-sample junction) with a bandwidth of 3.03 kHz. To accomplish low voltage operation which is important in achieving high precision, low noise, and low interference with the strong magnetic field, the coarse approach is implemented with an inertial slider driven by the lateral bending of a piezoelectric scanner tube (PST) whose inner electrode is axially split into two for enhanced bending per volt. The PST can also drive the same sliding piece to inertial slide in the other bending direction (along the sample surface) of the PST, which realizes the large area searching ability. The STM head is housed in a three segment tubular chamber, which is detachable near the STM head for the convenience of sample and tip changes. Atomic resolution images of a graphite sample taken under 17.6 T and 18.0001 T are presented to show its performance. © 2012 American Institute of Physics

Science 101: How Does an Electron Microscope Work?

Science.gov (United States)

Robertson, Bill

2013-01-01

Contrary to popular opinion, electron microscopes are not used to look at electrons. They are used to look for structure in things that are too small to observe with an optical microscope, or to obtain images that are magnified much more than is obtainable with an optical microscope. To understand how electron microscopes work, it will help to go…

A sub-cm micromachined electron microscope

Science.gov (United States)

Feinerman, A. D.; Crewe, D. A.; Perng, D. C.; Shoaf, S. E.; Crewe, A. V.

1993-01-01

A new approach for fabricating macroscopic (approximately 10x10x10 mm(exp 3)) structures with micron accuracy has been developed. This approach combines the precision of semiconductor processing and fiber optic technologies. A (100) silicon wafer is anisotropically etched to create four orthogonal v-grooves and an aperture on each 10x12 mm die. Precision 308 micron optical fibers are sandwiched between the die to align the v-grooves. The fiber is then anodically bonded to the die above and below it. This procedure is repeated to create thick structures and a stack of 5 or 6 die will be used to create a miniature scanning electron microscope (MSEM). Two die in the structure will have a segmented electrode to deflect the beam and correct for astigmatism. The entire structure is UHV compatible. The performance of an SEM improves as its length is reduced and a sub-cm 2 keV MSEM with a field emission source should have approximately 1 nm resolution. A low voltage high resolution MSEM would be useful for the examination of biological specimens and semiconductors with a minimum of damage. The first MSEM will be tested with existing 6 micron thermionic sources. In the future a micromachined field emission source will be used. The stacking technology presented in this paper can produce an array of MSEMs 1 to 30 mm in length with a 1 mm or larger period. A key question being addressed by this research is the optimum size for a low voltage MSEM which will be determined by the required spatial resolution, field of view, and working distance.

Development of superconducting cryo-electron microscope and its applications

International Nuclear Information System (INIS)

Iwatsuki, Masashi

1988-01-01

Recently, a superconducting cryo-electron microscope in which specimens are cooled to the liquid helium temperature (4.2 K) has been developed. The main components and functional features of this new microscope are reported together with application data on polyethylene, poly (4-methyl-1-pentene), valonia cellulose, rock salt, ice crystallites and ceramic superconductor. The resistance to electron radiation damage, of beam-sensitive specimens including polymers has been increased more than ten times. Thus, the microscope has made it possible to take high resolution images and to analyze the crystal-structure of micro-areas. (orig.) [de

Ponderomotive phase plate for transmission electron microscopes

Science.gov (United States)

Reed, Bryan W [Livermore, CA

2012-07-10

A ponderomotive phase plate system and method for controllably producing highly tunable phase contrast transfer functions in a transmission electron microscope (TEM) for high resolution and biological phase contrast imaging. The system and method includes a laser source and a beam transport system to produce a focused laser crossover as a phase plate, so that a ponderomotive potential of the focused laser crossover produces a scattering-angle-dependent phase shift in the electrons of the post-sample electron beam corresponding to a desired phase contrast transfer function.

Prediction of breakdown voltages in novel gases for high voltage insulation

Energy Technology Data Exchange (ETDEWEB)

Koch, M.

2015-07-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF{sub 6}) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF{sub 6} is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF{sub 6} in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF{sub 6} based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media.

On the optical stability of high-resolution transmission electron microscopes

International Nuclear Information System (INIS)

Barthel, J.; Thust, A.

2013-01-01

In the recent two decades the technique of high-resolution transmission electron microscopy experienced an unprecedented progress through the introduction of hardware aberration correctors and by the improvement of the achievable resolution to the sub-Ångström level. The important aspect that aberration correction at a given resolution requires also a well defined amount of optical stability has received little attention so far. Therefore we investigate the qualification of a variety of high-resolution electron microscopes to maintain an aberration corrected optical state in terms of an optical lifetime. We develop a comprehensive statistical framework for the estimation of the optical lifetime and find remarkably low values between tens of seconds and a couple of minutes. Probability curves are introduced, which inform the operator about the chance to work still in the fully aberration corrected state. - Highlights: • We investigate the temporal stability of optical aberrations in HRTEM. • We develop a statistical framework for the estimation of optical lifetimes. • We introduce plots showing the success probability for aberration-free work. • Optical lifetimes in sub-Ångström electron microscopy are surprisingly low. • The success of aberration correction depends strongly on the optical stability

High-voltage picoamperemeter

Energy Technology Data Exchange (ETDEWEB)

Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

2014-07-01

Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

High voltage microscopy of the hydration of cement with special respect to the influence of superplasticizers

International Nuclear Information System (INIS)

Pusch, R.; Fredrikson, A.

1990-02-01

This report describes a study of cement hydration, using high voltage 'humid cell' electron microscopy. Samples with and without superplasticizer were inserted in the humid cell, thus allowing the superplasticizer to affect the hydration process while observing it in the microscope. It is concluded that after an initial period of rather rapid hydration, further hydration is retarded by the superplasticizer. It probably forms a Helmholtz-type cloud of organic molecules around cement grains. (authors)

Power-supply system for high-voltage electron guns with grid control

International Nuclear Information System (INIS)

Grigorev, Y.V.

1985-01-01

A power-supply system for electron guns with grid control is described which consists of a source of accelerating voltage between 20 and 180 kV with a current of 100 mA and a control circuit for an electron gun that contains a pulse generator having an output voltage of up to 5 kV for pulse durations of 2, 10, 50 and 90 microseconds. The output pulses of the generator are synchronized with a certain phase of the cathode heater current of the gun, and they can be repeated at a frequency between 100 and 0.4 Hz. The system is reliable and resistant to the overloads associated with breakdowns in the gun

Application of magnetically insulated transmission lines for high current, high voltage electron beam accelerators

International Nuclear Information System (INIS)

Shope, S.L.; Mazarakis, M.G.; Frost, C.A.; Poukey, J.W.; Turman, B.N.

1993-01-01

Self Magnetically Insulated Transmission Lines (MITL) adders have been used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently the authors used a MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r b < 2 cm), 11 to 15 MeV, 50 to 100-kA beams with a small transverse velocity v perpendicular/c = β perpendicular ≤ 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. The authors' success with the MITL technology led them to investigate the application to higher energy accelerator designs. They have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30-50-ns FWHM output pulse

Application of Magnetically Insulated Transmission Lines for high current, high voltage electron beam accelerators

International Nuclear Information System (INIS)

Shope, S.L.; Mazarakis, M.G.; Frost, C.A.; Poukey, J.W.; Turman, B.N.

1991-01-01

Self Magnetically Insulated Transmission Lines (MITL) adders have been used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently we used at MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r ρ < 2 cm), 11 to 15 MeV, 50 to 100-kA beams with a small transverse velocity v perpendicular/c = β perpendicular ≤ 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. Our success with the MITL technology led us to investigate the application to higher energy accelerator designs. We have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30--50 ns FWHM output pulse. 10 refs

Application of magnetically insulated transmission lines for high current, high voltage electron beam accelerators

Science.gov (United States)

Shope, S. L.; Mazarakis, M. G.; Frost, C. A.; Poukey, J. W.; Turman, B. N.

Self Magnetically Insulated Transmission Lines (MITL) adders were used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently we used at MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r(sub rho) less than 2 cm), 11 - 15 MeV, 50 - 100-kA beams with a small transverse velocity v(perpendicular)/c = beta(perpendicular) less than or equal to 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. Our success with the MITL technology led us to investigate the application to higher energy accelerator designs. We have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30 - 50 ns FWHM output pulse.

Electronic Devices for Controlling the Very High Voltage in the ALICE TPC Detector

CERN Document Server

Boccioli, Marco

2007-01-01

The Time Projection Chamber (TPC) is the core of the ALICE experiment at CERN. The TPC Very High Voltage project covers the development of the control system for the power supply that generates the 100kV necessary for the drift field in the TPC. This paper reports on the project progress, introducing the control system architecture from the electronics up to the control level. All the electronic devices will be described, highlighting their communication issues, and the challenges in integrating these devices in a PLC-based control system.

Estimation of visibility of phase contrast with extraction voltages for field emission gun electron microscopes

Energy Technology Data Exchange (ETDEWEB)

Meng, Xing, E-mail: xmeng101@gmail.com

2017-02-15

Estimation was made for visibility of phase contrast with varying extraction voltages. The resulting decay rates of visibility show that images with low image contrast from cryo EM will be seriously impacted with high extraction voltages. - Highlights: • Cryo EM • Phase contrast • Extraction votage.

Electronic voltage and current transformers testing device.

Science.gov (United States)

Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

2012-01-01

A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware.

Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires

International Nuclear Information System (INIS)

Zubkov, Evgeniy

2013-01-01

In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

Towards native-state imaging in biological context in the electron microscope

Science.gov (United States)

Weston, Anne E.; Armer, Hannah E. J.

2009-01-01

Modern cell biology is reliant on light and fluorescence microscopy for analysis of cells, tissues and protein localisation. However, these powerful techniques are ultimately limited in resolution by the wavelength of light. Electron microscopes offer much greater resolution due to the shorter effective wavelength of electrons, allowing direct imaging of sub-cellular architecture. The harsh environment of the electron microscope chamber and the properties of the electron beam have led to complex chemical and mechanical preparation techniques, which distance biological samples from their native state and complicate data interpretation. Here we describe recent advances in sample preparation and instrumentation, which push the boundaries of high-resolution imaging. Cryopreparation, cryoelectron microscopy and environmental scanning electron microscopy strive to image samples in near native state. Advances in correlative microscopy and markers enable high-resolution localisation of proteins. Innovation in microscope design has pushed the boundaries of resolution to atomic scale, whilst automatic acquisition of high-resolution electron microscopy data through large volumes is finally able to place ultrastructure in biological context. PMID:19916039

A monochromatic, aberration-corrected, dual-beam low energy electron microscope.

Science.gov (United States)

Mankos, Marian; Shadman, Khashayar

2013-07-01

The monochromatic, aberration-corrected, dual-beam low energy electron microscope (MAD-LEEM) is a novel instrument aimed at imaging of nanostructures and surfaces at sub-nanometer resolution that includes a monochromator, aberration corrector and dual beam illumination. The monochromator reduces the energy spread of the illuminating electron beam, which significantly improves spectroscopic and spatial resolution. The aberration corrector utilizes an electron mirror with negative aberrations that can be used to compensate the aberrations of the LEEM objective lens for a range of electron energies. Dual flood illumination eliminates charging generated when a conventional LEEM is used to image insulating specimens. MAD-LEEM is designed for the purpose of imaging biological and insulating specimens, which are difficult to image with conventional LEEM, Low-Voltage SEM, and TEM instruments. The MAD-LEEM instrument can also be used as a general purpose LEEM with significantly improved resolution. The low impact energy of the electrons is critical for avoiding beam damage, as high energy electrons with keV kinetic energies used in SEMs and TEMs cause irreversible change to many specimens, in particular biological materials. A potential application for MAD-LEEM is in DNA sequencing, which demands imaging techniques that enable DNA sequencing at high resolution and speed, and at low cost. The key advantages of the MAD-LEEM approach for this application are the low electron impact energies, the long read lengths, and the absence of heavy-atom DNA labeling. Image contrast simulations of the detectability of individual nucleotides in a DNA strand have been developed in order to refine the optics blur and DNA base contrast requirements for this application. Copyright © 2013 Elsevier B.V. All rights reserved.

High Efficiency Power Converter for Low Voltage High Power Applications

DEFF Research Database (Denmark)

Nymand, Morten

The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based......, and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often...

Three-dimensional reconstruction of highly complex microscopic samples using scanning electron microscopy and optical flow estimation.

Directory of Open Access Journals (Sweden)

Ahmadreza Baghaie

Full Text Available Scanning Electron Microscope (SEM as one of the major research and industrial equipment for imaging of micro-scale samples and surfaces has gained extensive attention from its emerge. However, the acquired micrographs still remain two-dimensional (2D. In the current work a novel and highly accurate approach is proposed to recover the hidden third-dimension by use of multi-view image acquisition of the microscopic samples combined with pre/post-processing steps including sparse feature-based stereo rectification, nonlocal-based optical flow estimation for dense matching and finally depth estimation. Employing the proposed approach, three-dimensional (3D reconstructions of highly complex microscopic samples were achieved to facilitate the interpretation of topology and geometry of surface/shape attributes of the samples. As a byproduct of the proposed approach, high-definition 3D printed models of the samples can be generated as a tangible means of physical understanding. Extensive comparisons with the state-of-the-art reveal the strength and superiority of the proposed method in uncovering the details of the highly complex microscopic samples.

Electron microscope phase enhancement

Science.gov (United States)

Jin, Jian; Glaeser, Robert M.

2010-06-15

A microfabricated electron phase shift element is used for modifying the phase characteristics of an electron beam passing though its center aperture, while not affecting the more divergent portion of an incident beam to selectively provide a ninety-degree phase shift to the unscattered beam in the back focal plan of the objective lens, in order to realize Zernike-type, in-focus phase contrast in an electron microscope. One application of the element is to increase the contrast of an electron microscope for viewing weakly scattering samples while in focus. Typical weakly scattering samples include biological samples such as macromolecules, or perhaps cells. Preliminary experimental images demonstrate that these devices do apply a ninety degree phase shift as expected. Electrostatic calculations have been used to determine that fringing fields in the region of the scattered electron beams will cause a negligible phase shift as long as the ratio of electrode length to the transverse feature-size aperture is about 5:1. Calculations are underway to determine the feasibility of aspect smaller aspect ratios of about 3:1 and about 2:1.

Correlation between resistance-change effect in transition-metal oxides and secondary-electron contrast of scanning electron microscope images

International Nuclear Information System (INIS)

Kinoshita, K.; Kishida, S.; Yoda, T.

2011-01-01

Conductive atomic-force microscopy (C-AFM) writing is attracting attention as a technique for clarifying the switching mechanism of resistive random-access memory by providing a wide area filled with filaments, which can be regarded as one filament with large radius. The writing area on a nickel-oxide (NiO) film formed by conductive atomic-force microscopy was observed by scanning electron microscope, and a correlation between the contrast in a secondary-electron image (SEI) and the resistance written by C-AFM was revealed. In addition, the dependence of the SEI contrast on the beam accelerating voltage (V accel ) suggests that the resistance-change effect occurs near the surface of the NiO film. As for the effects of electron irradiation and vacuum annealing on the C-AFM writing area, it was shown that the resistance-change effect is caused by exchange of oxygen with the atmosphere at the surface of the NiO film. This result suggests that the low-resistance and high-resistance areas are, respectively, p-type Ni 1+δ O (δ 1+δ O (δ≥ 0).

Scanning electron microscope

International Nuclear Information System (INIS)

Anon.

1980-01-01

The principle underlying the design of the scanning electron microscope (SEM), the design and functioning of SEM are described. Its applications in the areas of microcircuitry and materials science are outlined. The development of SEM in India is reviewed. (M.G.B.)

Electron microscope studies

International Nuclear Information System (INIS)

Crewe, A.V.; Kapp, O.H.

1992-01-01

This is a report covering the research performed in the Crewe laboratory between 1964 and 1992. Because of limitations of space we have provided relatively brief summaries of the major research directions of the facility during these years. A complete bibliography has been included and we have referenced groups of pertinent publications at the beginning of each section. This report summarizes our efforts to develop better electron microscopes and chronicles many of the experimental programs, in materials science and biology, that acted both as a stimulus to better microscope design and also as a testing ground for many instrumental innovations

Electron microscope studies

Energy Technology Data Exchange (ETDEWEB)

Crewe, A.V.; Kapp, O.H.

1992-07-01

This is a report covering the research performed in the Crewe laboratory between 1964 and 1992. Because of limitations of space we have provided relatively brief summaries of the major research directions of the facility during these years. A complete bibliography has been included and we have referenced groups of pertinent publications at the beginning of each section. This report summarizes our efforts to develop better electron microscopes and chronicles many of the experimental programs, in materials science and biology, that acted both as a stimulus to better microscope design and also as a testing ground for many instrumental innovations.

Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

Energy Technology Data Exchange (ETDEWEB)

Baldacchini, Chiara [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy); Institute of Agro-Environmental and Forest Biology, CNR, I-05010 Porano (Italy); Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore, E-mail: cannistr@unitus.it [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy)

2015-05-04

Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

Voltage generators of high voltage high power accelerators

International Nuclear Information System (INIS)

Svinin, M.P.

1981-01-01

High voltage electron accelerators are widely used in modern radiation installations for industrial purposes. In the near future further increasing of their power may be effected, which enables to raise the efficiency of the radiation processes known and to master new power-consuming production in industry. Improvement of HV generators by increasing their power and efficiency is one of many scientific and engineering aspects the successful solution of which provides further development of these accelerators and their technical parameters. The subject is discussed in detail. (author)

Transmission electron microscope studies of extraterrestrial materials

Science.gov (United States)

Keller, Lindsay P.

1995-01-01

Transmission Electron Microscopy, X-Ray spectrometry and electron-energy-loss spectroscopy are used to analyse carbon in interplanetary dust particles. Optical micrographs are shown depicting cross sections of the dust particles embedded in sulphur. Selected-area electron diffraction patterns are shown. Transmission Electron Microscope specimens of lunar soil were prepared using two methods: ion-milling and ultramicrotomy. A combination of high resolution TEM imaging and electron diffraction is used to characterize the opaque assemblages. The opaque assemblages analyzed in this study are dominated by ilmenite with lesser rutile and spinel exsolutions, and traces of Fe metal.

Electron irradiation-induced destruction of carbon nanotubes in electron microscopes

International Nuclear Information System (INIS)

Molhave, Kristian; Gudnason, Sven Bjarke; Pedersen, Anders Tegtmeier; Clausen, Casper Hyttel; Horsewell, Andy; Boggild, Peter

2007-01-01

Observations of carbon nanotubes under exposure to electron beam irradiation in standard transmission electron microscope (TEM) and scanning electron microscope (SEM) systems show that such treatment in some cases can cause severe damage of the nanotube structure, even at electron energies far below the approximate 100 keV threshold for knock-on damage displacing carbon atoms in the graphene structure. We find that the damage we observe in one TEM can be avoided by use of a cold finger. This and the morphology of the damage imply that water vapour, which is present as a background gas in many vacuum chambers, can damage the nanotube structure through electron beam-induced chemical reactions. Though, the dependence on the background gas makes these observations specific for the presently used systems, the results demonstrate the importance of careful assessment of the level of subtle structural damage that the individual electron microscope system can do to nanostructures during standard use

Electron bunch structure in energy recovery linac with high-voltage dc photoelectron gun

Directory of Open Access Journals (Sweden)

Y. M. Saveliev

2016-09-01

Full Text Available The internal structure of electron bunches generated in an injector line with a dc photoelectron gun is investigated. Experiments were conducted on the ALICE (accelerators and lasers in combined experiments energy recovery linac at Daresbury Laboratory. At a relatively low dc gun voltage of 230 kV, the bunch normally consisted of two beamlets with different electron energies, as well as transverse and longitudinal characteristics. The beamlets are formed at the head and the tail of the bunch. At a higher gun voltage of 325 kV, the beam substructure is much less pronounced and could be observed only at nonoptimal injector settings. Experiments and computer simulations demonstrated that the bunch structure develops during the initial beam acceleration in the superconducting rf booster cavity and can be alleviated either by increasing the gun voltage to the highest possible level or by controlling the beam acceleration from the gun voltage in the first accelerating structure.

Innovation of High Voltage Supply Adjustment Device on Diagnostic X-Ray Machine

International Nuclear Information System (INIS)

Sujatno; Wiranto Budi Santoso

2010-01-01

Innovation of high voltage supply adjustment device on diagnostic x-ray machine has been carried out. The innovation is conducted by utilizing an electronic circuit as a high voltage adjustment device. Usually a diagnostic x-ray machine utilizes a transformer or an auto-transformer as a high voltage supply adjustment device. A high power diagnostic x-ray machine needs a high power transformer which has big physical dimension. Therefore a box control where the transformer is located has to have big physical dimension. Besides, the price of the transformer is expensive and hardly found in local markets. In this innovation, the transformer is replaced by an electronic circuit. The main component of the electronic circuit is Triac BTA-40. As adjustment device, the triac is controlled by a variable resistor which is coupled by a stepper motor. A step movement of stepper motor varies a value of resistor. The resistor value determines the triac gate voltage. Furthermore the triac will open according to the value of electrical current flowing to the gate. When the gate is open, electrical voltage and current will flow from cathode to anode of the triac. The value of these electrical voltage and current depend on gate open condition. Then this triac output voltage is feed to diagnostic x-ray machine high voltage supply. Therefore the high voltage value of diagnostic x-ray machine is adjusted by the output voltage of the electronic circuit. By using this electronic circuit, the physical dimension of diagnostic x-ray machine box control and the price of the equipment can be reduced. (author)

Electron beam dynamics in an ultrafast transmission electron microscope with Wehnelt electrode.

Science.gov (United States)

Bücker, K; Picher, M; Crégut, O; LaGrange, T; Reed, B W; Park, S T; Masiel, D J; Banhart, F

2016-12-01

High temporal resolution transmission electron microscopy techniques have shown significant progress in recent years. Using photoelectron pulses induced by ultrashort laser pulses on the cathode, these methods can probe ultrafast materials processes and have revealed numerous dynamic phenomena at the nanoscale. Most recently, the technique has been implemented in standard thermionic electron microscopes that provide a flexible platform for studying material's dynamics over a wide range of spatial and temporal scales. In this study, the electron pulses in such an ultrafast transmission electron microscope are characterized in detail. The microscope is based on a thermionic gun with a Wehnelt electrode and is operated in a stroboscopic photoelectron mode. It is shown that the Wehnelt bias has a decisive influence on the temporal and energy spread of the picosecond electron pulses. Depending on the shape of the cathode and the cathode-Wehnelt distance, different emission patterns with different pulse parameters are obtained. The energy spread of the pulses is determined by space charge and Boersch effects, given by the number of electrons in a pulse. However, filtering effects due to the chromatic aberrations of the Wehnelt electrode allow the extraction of pulses with narrow energy spreads. The temporal spread is governed by electron trajectories of different length and in different electrostatic potentials. High temporal resolution is obtained by excluding shank emission from the cathode and aberration-induced halos in the emission pattern. By varying the cathode-Wehnelt gap, the Wehnelt bias, and the number of photoelectrons in a pulse, tradeoffs between energy and temporal resolution as well as beam intensity can be made as needed for experiments. Based on the characterization of the electron pulses, the optimal conditions for the operation of ultrafast TEMs with thermionic gun assembly are elaborated. Copyright © 2016 Elsevier B.V. All rights reserved.

Miniaturized Environmental Scanning Electron Microscope for In Situ Planetary Studies

Science.gov (United States)

Gaskin, Jessica; Abbott, Terry; Medley, Stephanie; Gregory, Don; Thaisen, Kevin; Taylor , Lawrence; Ramsey, Brian; Jerman, Gregory; Sampson, Allen; Harvey, Ralph

2010-01-01

The exploration of remote planetary surfaces calls for the advancement of low power, highly-miniaturized instrumentation. Instruments of this nature that are capable of multiple types of analyses will prove to be particularly useful as we prepare for human return to the moon, and as we continue to explore increasingly remote locations in our Solar System. To this end, our group has been developing a miniaturized Environmental-Scanning Electron Microscope (mESEM) capable of remote investigations of mineralogical samples through in-situ topographical and chemical analysis on a fine scale. The functioning of an SEM is well known: an electron beam is focused to nanometer-scale onto a given sample where resulting emissions such as backscattered and secondary electrons, X-rays, and visible light are registered. Raster scanning the primary electron beam across the sample then gives a fine-scale image of the surface topography (texture), crystalline structure and orientation, with accompanying elemental composition. The flexibility in the types of measurements the mESEM is capable of, makes it ideally suited for a variety of applications. The mESEM is appropriate for use on multiple planetary surfaces, and for a variety of mission goals (from science to non-destructive analysis to ISRU). We will identify potential applications and range of potential uses related to planetary exploration. Over the past few of years we have initiated fabrication and testing of a proof-of-concept assembly, consisting of a cold-field-emission electron gun and custom high-voltage power supply, electrostatic electron-beam focusing column, and scanning-imaging electronics plus backscatter detector. Current project status will be discussed. This effort is funded through the NASA Research Opportunities in Space and Earth Sciences - Planetary Instrument Definition and Development Program.

Spin polarized electron source technology transferred from HE accelerators to electron microscopes

International Nuclear Information System (INIS)

Nakanishi, Tsutomu

2009-01-01

For many years, we have developed a technology of spin-polarized-electron-source (PES) for a future linear collider project (ILC). Various new techniques for achieving high polarization, high quantum efficiency, high current density, sub-nanosecond multi-bunch generation etc. were developed. Two fundamental technologies; reduction of dark current and preparation of extremely high vacuum environment to protect the Negative Electron Affinity (NEA) surface have been also developed. Using these PES technologies and a new transmission type photocathode, we recently succeeded in producing the high brightness and high polarization electron beam for the low energy electron microscope (LEEM). Our Spin-LEEM system enables the world-first dynamic observation of surface magnetic domain formed by evaporation on the metal substrate with ∼ 20 nm space resolutions. (author)

Modular High Voltage Power Supply

Energy Technology Data Exchange (ETDEWEB)

Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2017-05-18

The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

Modification of a scanning electron microscope to produce Smith-Purcell radiation

International Nuclear Information System (INIS)

Kapp, Oscar H.; Sun, Yin-e; Kim, Kwang-Je; Crewe, Albert V.

2004-01-01

We have modified a scanning electron microscope (SEM) in an attempt to produce a miniature free electron laser that can produce radiation in the far infrared region, which is difficult to obtain otherwise. This device is similar to the instrument studied by the Dartmouth group and functions on the basic principles first described by Smith and Purcell. The electron beam of the SEM is passed over a metal grating and should be capable of producing photons either in the spontaneous emission regime or in the superradiance regime if the electron beam is sufficiently bright. The instrument is capable of being continuously tuned by virtue of the period of the metal grating and the choice of accelerating voltage. The emitted Smith-Purcell photons exit the instrument via a polyethylene window and are detected by an infrared bolometer. Although we have obtained power levels exceeding nanowatts in the spontaneous emission regime, we have thus far not been able to detect a clear example of superradiance

Modular low-voltage electron beams

Science.gov (United States)

Berejka, Anthony J.; Avnery, Tovi; Carlson, Carl

2004-09-01

Modular, low-voltage systems have simplified electron beam (EB) technology for industrial uses and for research and development. Modular EB units are produced in quantity as sealed systems that are evacuated at the factory eliminating the need for vacuum pumps at the point of use. A simple plug-out—plug-in method of replacement eliminates downtime for servicing. Use of ultra-thin beam windows (innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, combine for ease of use and electrical transfer efficiency at voltages that can be varied between 80 and 150 kV and with high beam currents (up to 40 mA across the 25 cm window). These electron systems are available in three widths, the standard 25 cm and new 5 and 40 cm beams. Traditional uses in the graphic arts and coatings areas as well as uses in surface sterilization have found these compact, lightweight (approximately 15 kg) modular beams of interest. Units have been configured around complex shapes to enable three-dimensional surface curing (as for coatings on aluminum tubing) to be achieved at high production rates. Details of the beam construction and some industrial uses are discussed.

Recycling potential for low voltage and high voltage high rupturing capacity fuse links.

Science.gov (United States)

Psomopoulos, Constantinos S; Barkas, Dimitrios A; Kaminaris, Stavros D; Ioannidis, George C; Karagiannopoulos, Panagiotis

2017-12-01

Low voltage and high voltage high-rupturing-capacity fuse links are used in LV and HV installations respectively, protecting mainly the LV and HV electricity distribution and transportation networks. The Waste Electrical and Electronic Equipment Directive (2002/96/EC) for "Waste of electrical and electronic equipment" is the main related legislation and as it concerns electrical and electronic equipment, it includes electric fuses. Although, the fuse links consist of recyclable materials, only small scale actions have been implemented for their recycling around Europe. This work presents the possibilities for material recovery from this specialized industrial waste for which there are only limited volume data. Furthermore, in order to present the huge possibilities and environmental benefits, it presents the potential for recycling of HRC fuses used by the Public Power Corporation of Greece, which is the major consumer for the country, but one of the smallest ones in Europe and globally, emphasizing in this way in the issue. According to the obtained results, fuse recycling could contribute to the effort for minimize the impacts on the environment through materials recovery and reduction of the wastes' volume disposed of in landfills. Copyright © 2017 Elsevier Ltd. All rights reserved.

Historical evolution toward achieving ultrahigh vacuum in JEOL electron microscopes

CERN Document Server

Yoshimura, Nagamitsu

2014-01-01

This book describes the developmental history of the vacuum system of the transmission electron microscope (TEM) at the Japan Electron Optics Laboratory (JEOL) from its inception to its use in today’s high-technology microscopes. The author and his colleagues were engaged in developing vacuum technology for electron microscopes (JEM series) at JEOL for many years. This volume presents a summary and explanation of their work and the technology that makes possible a clean ultrahigh vacuum. The typical users of the TEM are top-level researchers working at the frontiers of new materials or with new biological specimens. They often use the TEM under extremely severe conditions, with problems sometimes occurring in the vacuum system of the microscopes. JEOL engineers then must work as quickly as possible to improve the vacuum evacuation system so as to prevent the recurrence of such problems. Among the wealth of explanatory material in this book are examples of users’ reports of problems in the vacuum system of...

Advances in imaging and electron physics the scanning transmission electron microscope

CERN Document Server

Hawkes, Peter W

2009-01-01

Advances in Imaging and Electron Physics merges two long-running serials--Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.  This particular volume presents several timely articles on the scanning transmission electron microscope. Updated with contributions from leading international scholars and industry experts Discusses hot topic areas and presents current and future research trends Provides an invaluable reference and guide for physicists, engineers and mathematicians.

Improvement the Capacity of Cockcroft-Walton High Voltage Source from 300 kV/20 mA to 500 kV/20 mA for Accelerating Voltage of Electron Beam Machine

International Nuclear Information System (INIS)

Suprapto; Djasiman

2002-01-01

The improvement capacity of Cockcroft-Walton high voltage source from 300 kV/20 mA to 500 kV/mA has been carrying out. To improve the capacity of high voltage source was done by means of increasing the stage number of voltage multiplier from 11 to 18 and its output voltage measuring resistance. Each stage of voltage multiplier consists of 2 capacitors and 2 circuits of high voltage diode. This voltage multiplier is constructed using main components of high voltage capacitor and high voltage diode each of 0.22 μF/50 kV and UF 5408 respectively. To avoid stray discharge and corona it was provided with high voltage electrode and corona ring. The test result indicated that the output voltage obtained from 16 stages was 350 kV according to operating condition of 25 MΩ resistive load and first stage voltage of 28.5 kV with oscillator frequency of 24 Hz. That condition requires anode voltage and current of 5.5 kV and 2.5 A respectively. The no load test for 16 stages indicates 400 kV of output voltage and 28.5 kV first stage voltage. Efficiency of high voltage source was 48 % at 6.75 kW of output power. The expected test of 500 kV with 18 stages of voltage multiplier can not be carried out because of some restrictive of loading system. From the test result can be predicted that the output voltage of 500 kV with 18 stages of voltage multiplier requires 31.2 kV of first stage voltage. Then the expected high voltage source of Cockcroft-Walton is capable as accelerating voltage source for Electron Beam Machine with energy of 500 kV. (author)

Damage-free vibrational spectroscopy of biological materials in the electron microscope.

Science.gov (United States)

Rez, Peter; Aoki, Toshihiro; March, Katia; Gur, Dvir; Krivanek, Ondrej L; Dellby, Niklas; Lovejoy, Tracy C; Wolf, Sharon G; Cohen, Hagai

2016-03-10

Vibrational spectroscopy in the electron microscope would be transformative in the study of biological samples, provided that radiation damage could be prevented. However, electron beams typically create high-energy excitations that severely accelerate sample degradation. Here this major difficulty is overcome using an 'aloof' electron beam, positioned tens of nanometres away from the sample: high-energy excitations are suppressed, while vibrational modes of energies electron energy loss spectra from biogenic guanine crystals in their native state, resolving their characteristic C-H, N-H and C=O vibrational signatures with no observable radiation damage. The technique opens up the possibility of non-damaging compositional analyses of organic functional groups, including non-crystalline biological materials, at a spatial resolution of ∼10 nm, simultaneously combined with imaging in the electron microscope.

Development of spin-polarized transmission electron microscope

International Nuclear Information System (INIS)

Kuwahara, M; Saitoh, K; Tanaka, N; Takeda, Y; Ujihara, T; Asano, H; Nakanishi, T

2011-01-01

In order to study spin related phenomena in nano-size materials, spin-polarized electron source (PES) has been employed for the incident beam in transmission electron microscope (TEM). The PES has been designed and constructed with optimizing for spin-polarized TEM. The illuminating system of TEM is also designed to focus the spin-polarized electron beam emitted from a semiconductor photocathode with a negative electron affinity (NEA) surface. The beam energy is set to below 40 keV which is lower energy type as a TEM, because the spin interaction with condensed matters is very small corresponding with a Coulomb interaction. The polarized electron gun has realized in an extra high vacuum (XHV) condition and high field gradient of 4 MV/m on a surface of photocathode. Furthermore, it demonstrated that 40-keV polarized electron beam was operated with a sub-milli second pulse mode by using the backside excitation type photocathode. This high performance PES will make it possible to observe dynamically a magnetic field images with high contrast and highspeed temporal imaging in TEM.

The Design and Construction of a Simple Transmission Electron Microscope for Educational Purposes.

Science.gov (United States)

Hearsey, Paul K.

This document presents a model for a simple transmission electron microscope for educational purposes. This microscope could demonstrate thermonic emission, particle acceleration, electron deflection, and flourescence. It is designed to be used in high school science courses, particularly physics, taking into account the size, weight, complexity…

Modular low-voltage electron emitters

International Nuclear Information System (INIS)

Berejka, Anthony J.

2005-01-01

Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates

Modular low-voltage electron emitters

Science.gov (United States)

Berejka, Anthony J.

2005-12-01

Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates.

Modular low-voltage electron beams

International Nuclear Information System (INIS)

Berejka, A.J.; Avnery, Tovi; Carlson, Carl

2004-01-01

Modular, low-voltage systems have simplified electron beam (EB) technology for industrial uses and for research and development. Modular EB units are produced in quantity as sealed systems that are evacuated at the factory eliminating the need for vacuum pumps at the point of use. A simple plug-out--plug-in method of replacement eliminates downtime for servicing. Use of ultra-thin beam windows (<10 μm of titanium foil), solid-state 19 in. (48 cm) rack-mounted power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, combine for ease of use and electrical transfer efficiency at voltages that can be varied between 80 and 150 kV and with high beam currents (up to 40 mA across the 25 cm window). These electron systems are available in three widths, the standard 25 cm and new 5 and 40 cm beams. Traditional uses in the graphic arts and coatings areas as well as uses in surface sterilization have found these compact, lightweight (approximately 15 kg) modular beams of interest. Units have been configured around complex shapes to enable three-dimensional surface curing (as for coatings on aluminum tubing) to be achieved at high production rates. Details of the beam construction and some industrial uses are discussed

Electron beam producing system for very high acceleration voltages and beam powers

International Nuclear Information System (INIS)

Andelfinger, C.; Dommaschk, W.; Ott, W.; Ulrich, M.; Weber, G.

1975-01-01

An electron beam producing system for acceleration voltages on the order of megavolts and beam powers on the order of gigawatts is described. A tubular housing of insulating material is used, and adjacent to its one closed end, a field emission cathode with a large surface area is arranged, while at its other end, from which the electron beam emerges, an annular anode is arranged. The device for collimating the electron beam consists of annular electrodes. (auth)

Electron optical characteristics of a concave electrostatic electron mirror for a scanning electron microscope

International Nuclear Information System (INIS)

Hamarat, R.T.; Witzani, J.; Hoerl, E.M.

1984-08-01

Numerical computer calculations are used to explore the design characteristics of a concave electrostatic electron mirror for a mirror attachment for a conventional scanning electron microscope or an instrument designed totally as a scanning electron mirror microscope. The electron paths of a number of set-ups are calculated and drawn graphically in order to find the optimum shape and dimensions of the mirror geometry. This optimum configuration turns out to be the transition configuration between two cases of electron path deflection, towards the optical axis of the system and away from it. (Author)

Electron beam dynamics in an ultrafast transmission electron microscope with Wehnelt electrode

Energy Technology Data Exchange (ETDEWEB)

Bücker, K.; Picher, M.; Crégut, O. [Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504 CNRS, Université de Strasbourg, 23 rue du Loess, 67034 Strasbourg (France); LaGrange, T. [Interdisciplinary Centre for Electron Microscopy, École Polytechnique Fédérale de Lausanne, 1015 Lausanne (Switzerland); Reed, B.W.; Park, S.T.; Masiel, D.J. [Integrated Dynamic Electron Solutions, Inc., 5653 Stoneridge Drive 117, Pleasanton, CA 94588 (United States); Banhart, F., E-mail: florian.banhart@ipcms.unistra.fr [Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504 CNRS, Université de Strasbourg, 23 rue du Loess, 67034 Strasbourg (France)

2016-12-15

High temporal resolution transmission electron microscopy techniques have shown significant progress in recent years. Using photoelectron pulses induced by ultrashort laser pulses on the cathode, these methods can probe ultrafast materials processes and have revealed numerous dynamic phenomena at the nanoscale. Most recently, the technique has been implemented in standard thermionic electron microscopes that provide a flexible platform for studying material's dynamics over a wide range of spatial and temporal scales. In this study, the electron pulses in such an ultrafast transmission electron microscope are characterized in detail. The microscope is based on a thermionic gun with a Wehnelt electrode and is operated in a stroboscopic photoelectron mode. It is shown that the Wehnelt bias has a decisive influence on the temporal and energy spread of the picosecond electron pulses. Depending on the shape of the cathode and the cathode-Wehnelt distance, different emission patterns with different pulse parameters are obtained. The energy spread of the pulses is determined by space charge and Boersch effects, given by the number of electrons in a pulse. However, filtering effects due to the chromatic aberrations of the Wehnelt electrode allow the extraction of pulses with narrow energy spreads. The temporal spread is governed by electron trajectories of different length and in different electrostatic potentials. High temporal resolution is obtained by excluding shank emission from the cathode and aberration-induced halos in the emission pattern. By varying the cathode-Wehnelt gap, the Wehnelt bias, and the number of photoelectrons in a pulse, tradeoffs between energy and temporal resolution as well as beam intensity can be made as needed for experiments. Based on the characterization of the electron pulses, the optimal conditions for the operation of ultrafast TEMs with thermionic gun assembly are elaborated. - Highlights: • A detailed characterization of electron

Transmission environmental scanning electron microscope with scintillation gaseous detection device

International Nuclear Information System (INIS)

Danilatos, Gerasimos; Kollia, Mary; Dracopoulos, Vassileios

2015-01-01

A transmission environmental scanning electron microscope with use of a scintillation gaseous detection device has been implemented. This corresponds to a transmission scanning electron microscope but with addition of a gaseous environment acting both as environmental and detection medium. A commercial type of low vacuum machine has been employed together with appropriate modifications to the detection configuration. This involves controlled screening of various emitted signals in conjunction with a scintillation gaseous detection device already provided with the machine for regular surface imaging. Dark field and bright field imaging has been obtained along with other detection conditions. With a progressive series of modifications and tests, the theory and practice of a novel type of microscopy is briefly shown now ushering further significant improvements and developments in electron microscopy as a whole. - Highlights: • Novel scanning transmission electron microscopy (STEM) with an environmental scanning electron microscope (ESEM) called TESEM. • Use of the gaseous detection device (GDD) in scintillation mode that allows high resolution bright and dark field imaging in the TESEM. • Novel approach towards a unification of both vacuum and environmental conditions in both bulk/surface and transmission mode of electron microscopy

DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

Science.gov (United States)

The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

A low cost high resolution pattern generator for electron-beam lithography

International Nuclear Information System (INIS)

Pennelli, G.; D'Angelo, F.; Piotto, M.; Barillaro, G.; Pellegrini, B.

2003-01-01

A simple, very low cost pattern generator for electron-beam lithography is presented. When it is applied to a scanning electron microscope, the system allows a high precision positioning of the beam for lithography of very small structures. Patterns are generated by a suitable software implemented on a personal computer, by using very simple functions, allowing an easy development of new writing strategies for a great adaptability to different user necessities. Hardware solutions, as optocouplers and battery supply, have been implemented for reduction of noise and disturbs on the voltages controlling the positioning of the beam

An accurate online calibration system based on combined clamp-shape coil for high voltage electronic current transformers

International Nuclear Information System (INIS)

Li, Zhen-hua; Li, Hong-bin; Zhang, Zhi

2013-01-01

Electronic transformers are widely used in power systems because of their wide bandwidth and good transient performance. However, as an emerging technology, the failure rate of electronic transformers is higher than that of traditional transformers. As a result, the calibration period needs to be shortened. Traditional calibration methods require the power of transmission line be cut off, which results in complicated operation and power off loss. This paper proposes an online calibration system which can calibrate electronic current transformers without power off. In this work, the high accuracy standard current transformer and online operation method are the key techniques. Based on the clamp-shape iron-core coil and clamp-shape air-core coil, a combined clamp-shape coil is designed as the standard current transformer. By analyzing the output characteristics of the two coils, the combined clamp-shape coil can achieve verification of the accuracy. So the accuracy of the online calibration system can be guaranteed. Moreover, by employing the earth potential working method and using two insulating rods to connect the combined clamp-shape coil to the high voltage bus, the operation becomes simple and safe. Tests in China National Center for High Voltage Measurement and field experiments show that the proposed system has a high accuracy of up to 0.05 class

An accurate online calibration system based on combined clamp-shape coil for high voltage electronic current transformers.

Science.gov (United States)

Li, Zhen-hua; Li, Hong-bin; Zhang, Zhi

2013-07-01

Electronic transformers are widely used in power systems because of their wide bandwidth and good transient performance. However, as an emerging technology, the failure rate of electronic transformers is higher than that of traditional transformers. As a result, the calibration period needs to be shortened. Traditional calibration methods require the power of transmission line be cut off, which results in complicated operation and power off loss. This paper proposes an online calibration system which can calibrate electronic current transformers without power off. In this work, the high accuracy standard current transformer and online operation method are the key techniques. Based on the clamp-shape iron-core coil and clamp-shape air-core coil, a combined clamp-shape coil is designed as the standard current transformer. By analyzing the output characteristics of the two coils, the combined clamp-shape coil can achieve verification of the accuracy. So the accuracy of the online calibration system can be guaranteed. Moreover, by employing the earth potential working method and using two insulating rods to connect the combined clamp-shape coil to the high voltage bus, the operation becomes simple and safe. Tests in China National Center for High Voltage Measurement and field experiments show that the proposed system has a high accuracy of up to 0.05 class.

Electron spin resonance scanning tunneling microscope

International Nuclear Information System (INIS)

Guo Yang; Li Jianmei; Lu Xinghua

2015-01-01

It is highly expected that the future informatics will be based on the spins of individual electrons. The development of elementary information unit will eventually leads to novel single-molecule or single-atom devices based on electron spins; the quantum computer in the future can be constructed with single electron spins as the basic quantum bits. However, it is still a great challenge in detection and manipulation of a single electron spin, as well as its coherence and entanglement. As an ideal experimental tool for such tasks, the development of electron spin resonance scanning tunneling microscope (ESR-STM) has attracted great attention for decades. This paper briefly introduces the basic concept of ESR-STM. The development history of this instrument and recent progresses are reviewed. The underlying mechanism is explored and summarized. The challenges and possible solutions are discussed. Finally, the prospect of future direction and applications are presented. (authors)

Soft X-ray generation in gases by means of a pulsed electron beam produced in a high-voltage barier discharge

NARCIS (Netherlands)

Azarov, A.V.; Peters, P.J.M.; Boller, Klaus J.

2007-01-01

A large area pulsed electron beam is produced by a high-voltage barrier discharge. We compare the properties of the x-rays generated by stopping this beam of electrons in a thin metal foil with those generated by stopping the electrons directly in various gases. The generation of x-rays was

E-beam high voltage switching power supply

Science.gov (United States)

Shimer, Daniel W.; Lange, Arnold C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

E-beam high voltage switching power supply

International Nuclear Information System (INIS)

Shimer, D.W.; Lange, A.C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360 degree/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs

On the resolution of the electron microscopic radioautography

International Nuclear Information System (INIS)

Uchida, Kazuko; Daimon, Tateo; Kawai, Kazuhiro

1981-01-01

The aim of electron microscopic radioautography is to reveal the exact localization of certain substances at the macromolecular level. In order to attain this object the establishment of a fine grain development method is indispensable. Some of latent images are formed at the contact surface between the polyhedral halide silver grain and the section surface, where the impact of #betta# particles come directly from the section involved, and since it is in contact with the section it remains in place even after development and gelatin removal. This latent image finally becomes a developed silver grain in the electron microscope radioautogram. Although the limit of resolution in electron microscopic radioautography is supposed to be the diameter of halide silver grains in emulsion, it may be improved by considering the fact that the contact area between the halide silver grain and the section surface is the minimum unit of resolution. The minimum resolution of electron microscopic radioautography was determined histologically to be about 100A. (author)

Heat- and radiation-resistant scintillator for electron microscopes

International Nuclear Information System (INIS)

Kosov, A.V.; Petrov, S.A.; Puzyr', A.P.; Chetvergov, N.A.

1987-01-01

The use of a scintillator consisting of a single crystal of bismuth orthogermanate, which has high heat and radiation resistance, in REM-100, REM-200, and REM-100U electron microscopes is described. A study of the heat and radiation stabilities of single crystals of bismuth orthogermanate (Bi 4 Ge 3 O 12 ) has shown that they withstood multiple electron-beam heating redness (T ∼ 800 0 C) without changes in their properties

A high-voltage triggered pseudospark discharge experiment

International Nuclear Information System (INIS)

Ramaswamy, K.; Destler, W.W.; Rodgers, J.

1996-01-01

The design and execution of a pulsed high-voltage (350 endash 400 keV) triggered pseudospark discharge experiment is reported. Experimental studies were carried out to obtain an optimal design for stable and reliable pseudospark operation in a high-voltage regime (approx-gt 350 kV). Experiments were performed to determine the most suitable fill gas for electron-beam formation. The pseudospark discharge is initiated by a trigger mechanism involving a flashover between the trigger electrode and hollow cathode housing. Experimental results characterizing the electron-beam energy using the range-energy method are reported. Source size imaging was carried out using an x-ray pinhole camera and a novel technique using Mylar as a witness plate. It was experimentally determined that strong pinching occurred later in time and was associated with the lower-energy electrons. copyright 1996 American Institute of Physics

Precision High-Voltage DC Dividers and Their Calibration

Czech Academy of Sciences Publication Activity Database

Dragounová, Naděžda

2005-01-01

Roč. 54, č. 5 (2005), s. 1911-1915 ISSN 0018-9456 R&D Projects: GA AV ČR KSK1048102; GA ČR GA202/03/0889 Keywords : calibration * dc voltage * high voltage (HV) Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.665, year: 2005

Void shrinkage in stainless steel during high energy electron irradiation

International Nuclear Information System (INIS)

Singh, B.N.; Foreman, A.J.E.

1976-03-01

During irradiation of thin foils of an austenitic stainless steel in a high voltage electron microscope, steadily growing voids have been observed to suddenly shrink and disappear at the irradiation temperature of 650 0 Cthe phenomenon has been observed in specimens both with and withoutimplanted helium. Possible mechanisms for void shrinkage during irradiation are considered. It is suggested that the dislocation-pipe-diffusion of vacancies from or of self-interstitial atoms to the voids can explain the shrinkage behaviour of voids observed during our experiments. (author)

Design of Pixellated CMOS Photon Detector for Secondary Electron Detection in the Scanning Electron Microscope

Directory of Open Access Journals (Sweden)

Joon Huang Chuah

2011-01-01

Full Text Available This paper presents a novel method of detecting secondary electrons generated in the scanning electron microscope (SEM. The method suggests that the photomultiplier tube (PMT, traditionally used in the Everhart-Thornley (ET detector, is to be replaced with a configurable multipixel solid-state photon detector offering the advantages of smaller dimension, lower supply voltage and power requirements, and potentially cheaper product cost. The design of the proposed detector has been implemented using a standard 0.35 μm CMOS technology with optical enhancement. This microchip comprises main circuit constituents of an array of photodiodes connecting to respective noise-optimised transimpedance amplifiers (TIAs, a selector-combiner (SC circuit, and a postamplifier (PA. The design possesses the capability of detecting photons with low input optical power in the range of 1 nW with 100 μm × 100 μm sized photodiodes and achieves a total amplification of 180 dBΩ at the output.

High-voltage nanosecond pulse shaper

International Nuclear Information System (INIS)

Kapishnikov, N.K.; Muratov, V.M.; Shatanov, A.A.

1987-01-01

A high-voltage pulse shaper with an output of up to 250 kV, a base duration of ∼ 10 nsec, and a repetition frequency of 50 pulses/sec is described. The described high-voltage nanosecond pulse shaper is designed for one-orbit extraction of an electron beam from a betatron. A diagram of the pulse shaper, which employs a single-stage generator is shown. The shaping element is a low-inductance capacitor bank of series-parallel KVI-3 (2200 pF at 10 kV) or K15-10 (4700 pF at 31.5 kV) disk ceramic capacitors. Four capacitors are connected in parallel and up to 25 are connected in series

High voltage systems

International Nuclear Information System (INIS)

Martin, M.

1991-01-01

Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

Forensic Scanning Electron Microscope

Science.gov (United States)

Keeley, R. H.

1983-03-01

The scanning electron microscope equipped with an x-ray spectrometer is a versatile instrument which has many uses in the investigation of crime and preparation of scientific evidence for the courts. Major applications include microscopy and analysis of very small fragments of paint, glass and other materials which may link an individual with a scene of crime, identification of firearms residues and examination of questioned documents. Although simultaneous observation and chemical analysis of the sample is the most important feature of the instrument, other modes of operation such as cathodoluminescence spectrometry, backscattered electron imaging and direct x-ray excitation are also exploited. Marks on two bullets or cartridge cases can be compared directly by sequential scanning with a single beam or electronic linkage of two instruments. Particles of primer residue deposited on the skin and clothing when a gun is fired can be collected on adhesive tape and identified by their morphology and elemental composition. It is also possible to differentiate between the primer residues of different types of ammunition. Bullets may be identified from the small fragments left behind as they pass through the body tissues. In the examination of questioned documents the scanning electron microscope is used to establish the order in which two intersecting ink lines were written and to detect traces of chemical markers added to the security inks on official documents.

Electron heating of voltage-driven and matched dual frequency discharges

International Nuclear Information System (INIS)

Lieberman, M A; Lichtenberg, A J

2010-01-01

In a dual frequency capacitive sheath, a high frequency uniform sheath motion is coupled with a low frequency Child law sheath motion. For current-driven high and low frequency sheaths, the high frequency sheath motion generates most of the ohmic and stochastic heating of the discharge electrons. The low frequency motion, in addition to its primary purpose of establishing the ion bombarding energy, also increases the heating by widening the sheath width and transporting the oscillating electrons to regions of lower plasma density, and hence higher sheath velocity. In this work, we show that for voltage-driven high and low frequency sheaths, increasing the low frequency voltage reduces the heating, due to the reduced high frequency current that flows through the sheath under voltage-driven conditions. We determine the dependence of the heating on various parameters and compare the results with the current-driven case. Particle-in-cell simulations are used to confirm this result. Discharges generally employ a matching network to maximize the power transmitted to the plasma. We obtain analytic expressions for the effect of the low frequency source under matched conditions and, again, find that the low frequency source reduces the heating.

Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

Energy Technology Data Exchange (ETDEWEB)

Savic, M.S.

1986-07-01

The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

Dynamic investigation of electron trapping and charge decay in electron-irradiated Al sub 2 O sub 3 in a scanning electron microscope: Methodology and mechanisms

CERN Document Server

Fakhfakh, S; Belhaj, M; Fakhfakh, Z; Kallel, A; Rau, E I

2002-01-01

The charging and discharging of polycrystalline Al sub 2 O sub 3 submitted to electron-irradiation in a scanning electron microscope (SEM) are investigated by means of the displacement current method. To circumvent experimental shortcomings inherent to the use of the basic sample holder, a redesign of the latter is proposed and tests are carried out to verify its operation. The effects of the primary beam accelerating voltage on charging, flashover and discharging phenomena during and after electron-irradiation are studied. The experimental results are then analyzed. In particular, the divergence between the experimental data and those predicted by the total electron emission yield approach (TEEYA) is discussed. A partial discharge was observed immediately after the end of the electron-irradiation exposure. The experimental data suggests, that the discharge is due to the evacuation to the ground, along the insulator surface, of released electrons from shallow traps at (or in the close vicinity of) the insulat...

Calibration for medium resolution off-axis electron holography using a flexible dual-lens imaging system in a JEOL ARM 200F microscope.

Science.gov (United States)

Cantu-Valle, Jesus; Ruiz-Zepeda, Francisco; Mendoza-Santoyo, Fernando; Jose-Yacaman, Miguel; Ponce, Arturo

2014-12-01

In this work the calibration of a medium resolution off-axis electron holography using a dual-lens imaging system in a JEOL ARM 200F is shown. The objective dual-lens configuration allows adjusting the field of view from 35nm to 2.5μm. Subsequently, the parameters used in phase shift reconstruction were calibrated considering biprism voltage versus fringe spacing (σ) and versus fringe width (W). The reliability of the transmission electron microscope performance using these parameters was achieved using gold nanoparticles of known size and adjusting the excitation voltage of the lenses. Copyright © 2014 Elsevier B.V. All rights reserved.

Surface charge compensation for a highly charged ion emission microscope

International Nuclear Information System (INIS)

McDonald, J.W.; Hamza, A.V.; Newman, M.W.; Holder, J.P.; Schneider, D.H.G.; Schenkel, T.

2003-01-01

A surface charge compensation electron flood gun has been added to the Lawrence Livermore National Laboratory (LLNL) highly charged ion (HCI) emission microscope. HCI surface interaction results in a significant charge residue being left on the surface of insulators and semiconductors. This residual charge causes undesirable aberrations in the microscope images and a reduction of the Time-Of-Flight (TOF) mass resolution when studying the surfaces of insulators and semiconductors. The benefits and problems associated with HCI microscopy and recent results of the electron flood gun enhanced HCI microscope are discussed

Examples of electrostatic electron optics: The Farrand and Elektros microscopes and electron mirrors

International Nuclear Information System (INIS)

Hawkes, P.W.

2012-01-01

The role of Gertrude Rempfer in the design of the Farrand and Elektros microscopes is evoked. The study of electron mirror optics, aberration correction using mirrors and the development of microscopes employing electron mirrors are recapitulated, accompanied by a full bibliography, of earlier publications in particular.

Miniature Variable Pressure Scanning Electron Microscope for In-Situ Imaging and Chemical Analysis

Science.gov (United States)

Gaskin, Jessica A.; Jerman, Gregory; Gregory, Don; Sampson, Allen R.

2012-01-01

NASA Marshall Space Flight Center (MSFC) is leading an effort to develop a Miniaturized Variable Pressure Scanning Electron Microscope (MVP-SEM) for in-situ imaging and chemical analysis of uncoated samples. This instrument development will be geared towards operation on Mars and builds on a previous MSFC design of a mini-SEM for the moon (funded through the NASA Planetary Instrument Definition and Development Program). Because Mars has a dramatically different environment than the moon, modifications to the MSFC lunar mini-SEM are necessary. Mainly, the higher atmospheric pressure calls for the use of an electron gun that can operate at High Vacuum, rather than Ultra-High Vacuum. The presence of a CO2-rich atmosphere also allows for the incorporation of a variable pressure system that enables the in-situ analysis of nonconductive geological specimens. Preliminary testing of Mars meteorites in a commercial Environmental SEM(Tradmark) (FEI) confirms the usefulness of lowcurrent/low-accelerating voltage imaging and highlights the advantages of using the Mars atmosphere for environmental imaging. The unique capabilities of the MVP-SEM make it an ideal tool for pursuing key scientific goals of NASA's Flagship Mission Max-C; to perform in-situ science and collect and cache samples in preparation for sample return from Mars.

Evolutionary developments in x ray and electron energy loss microanalysis instrumentation for the analytical electron microscope

Science.gov (United States)

Zaluzec, Nester J.

Developments in instrumentation for both X ray Dispersive and Electron Energy Loss Spectroscopy (XEDS/EELS) over the last ten years have given the experimentalist a greatly enhanced set of analytical tools for characterization. Microanalysts have waited for nearly two decades now in the hope of getting a true analytical microscope and the development of 300 to 400 kV instruments should have allowed us to attain this goal. Unfortunately, this has not generally been the case. While there have been some major improvements in the techniques, there has also been some devolution in the modern AEM (Analytical Electron Microscope). In XEDS, the majority of today's instruments are still plagued by the hole count effect, which was first described in detail over fifteen years ago. The magnitude of this problem can still reach the 20 percent level for medium atomic number species in a conventional off-the-shelf intermediate voltage AEM. This is an absurd situation and the manufacturers should be severely criticized. Part of the blame, however, also rests on the AEM community for not having come up with a universally agreed upon standard test procedure. Fortunately, such a test procedure is in the early stages of refinement. The proposed test specimen consists of an evaporated Cr film approx. 500 to 1000A thick supported upon a 3mm diameter Molybdenum 200 micron aperture.

Tuning of the microstructure, mechanical and tribological properties of a-C:H films by bias voltage of high frequency unipolar pulse

International Nuclear Information System (INIS)

Wang, Jia; Cao, Zhongyue; Pan, Fuping; Wang, Fuguo; Liang, Aimin; Zhang, Junyan

2015-01-01

Highlights: • a-C:H films deposited by high frequency unipolar pulse PECVD. • The film structures can be adjusted by bias voltage. • More graphitic structures form at high bias voltage. • The mechanical and tribological properties are improved by these structures. - Abstract: Amorphous hydrogenated carbon (a-C:H) films were prepared by high frequency unipolar pulse plasma-enhanced chemical vapor deposition in CH 4 , Ar, and H 2 atmosphere with the bias voltage in the range of −800 –−1600 V. The microstructures and mechanical properties of a-C:H films were investigated via high resolution transmission electron microscope (HRTEM), Raman spectroscopy, and Nanoindenter. The results reveal that the curved and straight graphitic microstructures appear in amorphous carbon matrix, and their contents increase obviously with the bias voltage. At the same time, the corresponding hardness decreases and elastic recovery increases, however even in such a case films still possess excellent mechanical properties. According to the tribological property characterization, we believe that the bias voltage also influences their tribological performances significantly, the higher the bias voltage finally gets, the lower the friction coefficient and wear rate occur. These results indicate that the microstructures of a-C:H films can be tuned efficiently by bias voltage and the films with good mechanical and tribological properties can be obtained at a higher range.

Tuning of the microstructure, mechanical and tribological properties of a-C:H films by bias voltage of high frequency unipolar pulse

Energy Technology Data Exchange (ETDEWEB)

Wang, Jia; Cao, Zhongyue; Pan, Fuping [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Fuguo, E-mail: fgwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Liang, Aimin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Junyan, E-mail: zhangjunyan@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2015-11-30

Highlights: • a-C:H films deposited by high frequency unipolar pulse PECVD. • The film structures can be adjusted by bias voltage. • More graphitic structures form at high bias voltage. • The mechanical and tribological properties are improved by these structures. - Abstract: Amorphous hydrogenated carbon (a-C:H) films were prepared by high frequency unipolar pulse plasma-enhanced chemical vapor deposition in CH{sub 4}, Ar, and H{sub 2} atmosphere with the bias voltage in the range of −800 –−1600 V. The microstructures and mechanical properties of a-C:H films were investigated via high resolution transmission electron microscope (HRTEM), Raman spectroscopy, and Nanoindenter. The results reveal that the curved and straight graphitic microstructures appear in amorphous carbon matrix, and their contents increase obviously with the bias voltage. At the same time, the corresponding hardness decreases and elastic recovery increases, however even in such a case films still possess excellent mechanical properties. According to the tribological property characterization, we believe that the bias voltage also influences their tribological performances significantly, the higher the bias voltage finally gets, the lower the friction coefficient and wear rate occur. These results indicate that the microstructures of a-C:H films can be tuned efficiently by bias voltage and the films with good mechanical and tribological properties can be obtained at a higher range.

High voltage engineering

CERN Document Server

Rizk, Farouk AM

2014-01-01

Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

Characterization of a low-voltage electron beam

International Nuclear Information System (INIS)

Berejka, A.J.

2004-01-01

Growing interests in low-voltage electron beam (EB) processing in areas that may require regulatory compliance, such as the curing of inks and coatings for food packaging materials and in the surface disinfection of medicinal and food containers, lead to the characterization of a low-voltage EB by two methods: a widely used thin radiochromic film and a film strip made on a continuous basis with an alanine coating. Using a laboratory unit, beam currents and voltages were varied and then optical density and alanine/matrix ratios were, respectively, determined. No inferences as to 'dose' were made. The radiochromic film was found to be insensitive to slight changes at low beam currents and to show considerable divergence and a broadening in response as current was increased across a meaningful range at the three applied beam voltages of 80, 100 and 120 kV. The electron paramagnetic resonance (EPR) increase in response of the alanine coated film taken as a ratio to an internal reference material within the test instrument itself was shown to have a linear response with respect to beam current and no divergence as current increased. The use of an alanine coating of thickness greater than that of the extrapolated range of the electron penetration offers a method for the characterization of the output of such very low-voltage beams

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

Science.gov (United States)

Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

2016-12-01

Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

Fluorescence photooxidation with eosin: a method for high resolution immunolocalization and in situ hybridization detection for light and electron microscopy

Science.gov (United States)

1994-01-01

A simple method is described for high-resolution light and electron microscopic immunolocalization of proteins in cells and tissues by immunofluorescence and subsequent photooxidation of diaminobenzidine tetrahydrochloride into an insoluble osmiophilic polymer. By using eosin as the fluorescent marker, a substantial improvement in sensitivity is achieved in the photooxidation process over other conventional fluorescent compounds. The technique allows for precise correlative immunolocalization studies on the same sample using fluorescence, transmitted light and electron microscopy. Furthermore, because eosin is smaller in size than other conventional markers, this method results in improved penetration of labeling reagents compared to gold or enzyme based procedures. The improved penetration allows for three-dimensional immunolocalization using high voltage electron microscopy. Fluorescence photooxidation can also be used for high resolution light and electron microscopic localization of specific nucleic acid sequences by in situ hybridization utilizing biotinylated probes followed by an eosin-streptavidin conjugate. PMID:7519623

Current-Voltage Characteristic of Nanosecond - Duration Relativistic Electron Beam

Science.gov (United States)

Andreev, Andrey

2005-10-01

The pulsed electron-beam accelerator SINUS-6 was used to measure current-voltage characteristic of nanosecond-duration thin annular relativistic electron beam accelerated in vacuum along axis of a smooth uniform metal tube immersed into strong axial magnetic field. Results of these measurements as well as results of computer simulations performed using 3D MAGIC code show that the electron-beam current dependence on the accelerating voltage at the front of the nanosecond-duration pulse is different from the analogical dependence at the flat part of the pulse. In the steady-state (flat) part of the pulse), the measured electron-beam current is close to Fedosov current [1], which is governed by the conservation law of an electron moment flow for any constant voltage. In the non steady-state part (front) of the pulse, the electron-beam current is higher that the appropriate, for a giving voltage, steady-state (Fedosov) current. [1] A. I. Fedosov, E. A. Litvinov, S. Ya. Belomytsev, and S. P. Bugaev, ``Characteristics of electron beam formed in diodes with magnetic insulation,'' Soviet Physics Journal (A translation of Izvestiya VUZ. Fizika), vol. 20, no. 10, October 1977 (April 20, 1978), pp.1367-1368.

An investigation of the electron irradiation of graphite in a helium atmosphere using a modified electron microscope

International Nuclear Information System (INIS)

Burden, A.P.; Hutchison, J.L.

1997-01-01

The behaviour of graphite particles immersed in helium gas and irradiated with an electron-beam has been investigated. Because this treatment was performed in a modified high resolution transmission electron microscope, the rapid morphological and microstructural changes that occurred could be directly observed. The results have implications for future controlled environment microscopy of carbonaceous materials and the characterisation of such microscopes. It is also shown that the processes can provide insight into ion-irradiation induced damage of graphite and the mechanism of fullerene generation. (Author)

High frequency breakdown voltage

International Nuclear Information System (INIS)

Chu, Thanh Duy.

1992-03-01

This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

Complex composition film condensation in the sluice device of an electron microscope

International Nuclear Information System (INIS)

Kukuev, V.I.; Lesovoj, M.V.; Vlasov, D.A.; Malygin, M.V.; Domashevskaya, Eh.P.; Tomashpol'skij, Yu.Ya.

1994-01-01

Based on the sluice device of an electron microscope a system is developed for material laser evaporation and vapor condensation on a substrate, situated in the microscope specimen holder. Substrate heating by laser radiation to 100 deg C is used. The system is applied for investigating growth of high-temperature superconductor films

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

International Nuclear Information System (INIS)

Luo Jun; Zhao Sheng-Lei; Mi Min-Han; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei; Hou Bin

2016-01-01

The effects of gate length L G on breakdown voltage V BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L G = 1 μm∼ 20 μm. With the increase of L G , V BR is first increased, and then saturated at L G = 3 μm. For the HEMT with L G = 1 μm, breakdown voltage V BR is 117 V, and it can be enhanced to 148 V for the HEMT with L G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L G > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L G = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. (paper)

Capacitive divider for output voltage measurement of intense electron beam accelerator

International Nuclear Information System (INIS)

Ding Desheng; Yi Lingzhi; Yu Binxiong; Hong Zhiqiang; Liu Jinliang

2012-01-01

A kind of simple-mechanism, easy-disassembly self-integrating capacitive divider used for measuring diode output voltage of intense electron beam accelerator (IEBA) is developed. The structure of the capacitive divider is described, and the capacitance value of the capacitive divider is calculated by theoretical analysis and electromagnetic simulation. The dependence of measurement voltage on electrical parameters such as stray capacitance, earth capacitance of front resistance is obtained by PSpice simulation. Measured waveforms appear overshoot phenomenon when stray capacitance of front resistance is larger, and the wavefront will be affected when earth capacitance of front resistance is larger. The diode output voltage waveforms of intense electron beam accelerator, are measured by capacitive divider and calibrated by water resistance divider, which is accordance with that measured by a resistive divider, the division ratio is about 563007. The designed capacitive divider can be used to measure high-voltage pulse with 100 ns full width at half maximum. (authors)

The improved stability of an organic crystal in the Hitachi HV-1 high vacuum electron microscope

International Nuclear Information System (INIS)

Hartman, R.S.; Hartman, R.E.; Alsberg, H.; Nathan, R.

1974-01-01

A specimen of crystalline indanthrene olive T was placed in the HV-1, which was then pumped for 2 hours. The 25 A bright field fringe pattern was then observed on the TV monitor. Deterioration was noted very shortly, and the electron microscope was then pumped for three days, after which another field was subjected to the same level of irradiation by 50 KV electrons. It was found that there was little if any deterioration even after 20 minutes. It was concluded that it is possible to find conditions in a transmission EM where stability far exceeds that predicted by current theories of radiation damage or demonstrated by conventional electron microscopes. (R.L.)

First high-voltage measurements using Ca{sup +} ions at the ALIVE experiment

Energy Technology Data Exchange (ETDEWEB)

König, K., E-mail: kkoenig@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Geppert, Ch. [Universität Mainz, Institut für Kernchemie (Germany); Krämer, J.; Maaß, B. [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Otten, E. W. [Universität Mainz, Institut für Physik (Germany); Ratajczyk, T.; Nörtershäuser, W. [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

2017-11-15

Many physics experiments depend on accurate high-voltage measurements to determine for example the exact retardation potential of an electron spectrometer as in the KATRIN experiment or the acceleration voltage of the ions at ISOL facilities. Until now only precision high-voltage dividers can be used to measure voltages up to 65 kV with an accuracy of 1 ppm. However, these dividers need frequent calibration and cross-checking and the direct traceability is not given. In this article we will describe the status of an experiment which aims to measure high voltages using collinear laser spectroscopy and which has the potential to provide a high-voltage standard and hence, a calibration source for precision high-voltage dividers on the 1 ppm level.

Digital management of an electron microscope unit

International Nuclear Information System (INIS)

Elea, N.; Dickson, M.; Munroe, P.

2002-01-01

Full text: Electron microscope units, especially those such as ours, which operate as a central infrastructural facility are increasingly asked to provide more service, over more instruments with decreasing, or limited, financial resources. We believe that staff time is best used performing electron microscopy, assisting users and maintaining instrumentation rather than in the pursuit of red tape. One solution to this problem has been the creation of a control system which performs all routine acts of data management, such as the archiving and accessing of digital data, providing access to bookings, and most importantly in the era of user pays services, logging time and billing users. The system we have created, developed and expanded allows the users themselves to access our server through any web-browser and make their own bookings or access and manipulate their data. Users themselves must log on to a microscope through swipecard readers before it can be used and log-off after use. Their time is logged precisely and an exquisitely fair user pays systems can be operated by transferring logged usage time to spreadsheets to calculate charges. Furthermore, this system acts as a method of user authentication and can be used to bar incompetent or unauthorised users. The system has recently been upgraded to increase its utility to include sensors that monitor the electron microscope operating environment, such as magnetic field, room temperature, water flow etc, so that if these parameters depart significantly from optimum levels electron microscope unit staff may be alerted. In this presentation the structure of our system will be described and the advantages and disadvantages of such a system will be discussed. Copyright (2002) Australian Society for Electron Microscopy Inc

The IBA Rhodotron: an industrial high-voltage high-powered electron beam accelerator for polymers radiation processing

Science.gov (United States)

Van Lancker, Marc; Herer, Arnold; Cleland, Marshall R.; Jongen, Yves; Abs, Michel

1999-05-01

The Rhodotron is a high-voltage, high-power electron beam accelerator based on a design concept first proposed in 1989 by J. Pottier of the French Atomic Agency, Commissariat à l'Energie Atomique (CEA). In December 1991, the Belgian particle accelerator manufacturer, Ion Beam Applications s.a. (IBA) entered into an exclusive agreement with the CEA to develop and industrialize the Rhodotron. Electron beams have long been used as the preferential method to cross-link a variety of polymers, either in their bulk state or in their final form. Used extensively in the wire and cable industry to toughen insulating jackets, electron beam-treated plastics can demonstrate improved tensile and impact strength, greater abrasion resistance, increased temperature resistance and dramatically improved fire retardation. Electron beams are used to selectively cross-link or degrade a wide range of polymers in resin pellets form. Electron beams are also used for rapid curing of advanced composites, for cross-linking of floor-heating and sanitary pipes and for cross-linking of formed plastic parts. Other applications include: in-house and contract medical device sterilization, food irradiation in both electron and X-ray modes, pulp processing, electron beam doping of semi-conductors, gemstone coloration and general irradiation research. IBA currently markets three models of the Rhodotron, all capable of 10 MeV and alternate beam energies from 3 MeV upwards. The Rhodotron models TT100, TT200 and TT300 are typically specified with guaranteed beam powers of 35, 80 and 150 kW, respectively. Founded in 1986, IBA, a spin-off of the Cyclotron Research Center at the University of Louvain (UCL) in Belgium, is a pioneer in accelerator design for industrial-scale production.

The IBA Rhodotron: an industrial high-voltage high-powered electron beam accelerator for polymers radiation processing

International Nuclear Information System (INIS)

Lancker, Marc van; Herer, Arnold; Cleland, Marshall R.; Jongen, Yves; Abs, Michel

1999-01-01

The Rhodotron is a high-voltage, high-power electron beam accelerator based on a design concept first proposed in 1989 by J. Pottier of the French Atomic Agency, Commissariat a l'Energie Atomique (CEA). In December 1991, the Belgian particle accelerator manufacturer, Ion Beam Applications s.a. (IBA) entered into an exclusive agreement with the CEA to develop and industrialize the Rhodotron. Electron beams have long been used as the preferential method to cross-link a variety of polymers, either in their bulk state or in their final form. Used extensively in the wire and cable industry to toughen insulating jackets, electron beam-treated plastics can demonstrate improved tensile and impact strength, greater abrasion resistance, increased temperature resistance and dramatically improved fire retardation. Electron beams are used to selectively cross-link or degrade a wide range of polymers in resin pellets form. Electron beams are also used for rapid curing of advanced composites, for cross-linking of floor-heating and sanitary pipes and for cross-linking of formed plastic parts. Other applications include: in-house and contract medical device sterilization, food irradiation in both electron and X-ray modes, pulp processing, electron beam doping of semi-conductors, gemstone coloration and general irradiation research. IBA currently markets three models of the Rhodotron, all capable of 10 MeV and alternate beam energies from 3 MeV upwards. The Rhodotron models TT100, TT200 and TT300 are typically specified with guaranteed beam powers of 35, 80 and 150 kW, respectively. Founded in 1986, IBA, a spin-off of the Cyclotron Research Center at the University of Louvain (UCL) in Belgium, is a pioneer in accelerator design for industrial-scale production

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

Science.gov (United States)

Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

2014-01-01

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

High-voltage pixel sensors for ATLAS upgrade

Energy Technology Data Exchange (ETDEWEB)

Perić, I., E-mail: ivan.peric@ziti.uni-heidelberg.de [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Kreidl, C.; Fischer, P. [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M. [CPPM, Marseille (France); Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B. [CERN, Geneve (Switzerland); Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A. [University of Geneve (Switzerland); and others

2014-11-21

The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

Technological Aspects: High Voltage

CERN Document Server

Faircloth, D.C.

2013-12-16

This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

Ultrawidefield microscope for high-speed fluorescence imaging and targeted optogenetic stimulation.

Science.gov (United States)

Werley, Christopher A; Chien, Miao-Ping; Cohen, Adam E

2017-12-01

The rapid increase in the number and quality of fluorescent reporters and optogenetic actuators has yielded a powerful set of tools for recording and controlling cellular state and function. To achieve the full benefit of these tools requires improved optical systems with high light collection efficiency, high spatial and temporal resolution, and patterned optical stimulation, in a wide field of view (FOV). Here we describe our 'Firefly' microscope, which achieves these goals in a Ø6 mm FOV. The Firefly optical system is optimized for simultaneous photostimulation and fluorescence imaging in cultured cells. All but one of the optical elements are commercially available, yet the microscope achieves 10-fold higher light collection efficiency at its design magnification than the comparable commercially available microscope using the same objective. The Firefly microscope enables all-optical electrophysiology ('Optopatch') in cultured neurons with a throughput and information content unmatched by other neuronal phenotyping systems. This capability opens possibilities in disease modeling and phenotypic drug screening. We also demonstrate applications of the system to voltage and calcium recordings in human induced pluripotent stem cell derived cardiomyocytes.

National Center for Electron Microscopy users' guide

International Nuclear Information System (INIS)

1987-01-01

The National Center for Electron Microscopy (NCEM) in the Materials and Molecular Research Division of the Lawrence Berkeley Laboratory is a high voltage electron microscope facility for ultra-high resolution or dynamic in-situ studies. This guide describes the instruments and their specifications, support instrumentation, and user policies. Advice as to travel and accommodations is provided in the guide. (FI)

Surface composite nanostructures of AZ91 magnesium alloy induced by high current pulsed electron beam treatment

International Nuclear Information System (INIS)

Li, M.C.; Hao, S.Z.; Wen, H.; Huang, R.F.

2014-01-01

High current pulsed electron beam (HCPEB) treatment was conducted on an AZ91 cast magnesium alloy with accelerating voltage 27 kV, energy density 3 J/cm 2 and pulse duration 2.5 μs. The surface microstructure was characterized by optical microscope (OM), X-ray diffraction (XRD), scanning electron microscope (SEM) equipped with energy dispersive spectrometer (EDS), and transmission electron microscope (TEM). The surface corrosion property was tested with electrochemical method in 3.5 wt.% NaCl solution. It is found that after 1 pulse of HCPEB treatment, the initial eutectic α phase and Mg 17 Al 12 particles started to dissolve in the surface modified layer of depth ∼15 μm. When using 15 HCPEB pulses, the Al content in surface layer increased noticeably, and the phase structure was modified as composite nanostructures consisted of nano-grained Mg 3.1 Al 0.9 domains surrounded by network of Mg 17 Al 12 phase. The HCPEB treated samples showed an improved corrosion resistance with cathodic current density decreased by two orders of magnitude as compared to the initial AZ91 alloy.

Technological Aspects: High Voltage

International Nuclear Information System (INIS)

Faircloth, D C

2013-01-01

This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

Innovative energy efficient low-voltage electron beam emitters

International Nuclear Information System (INIS)

Felis, Kenneth P.; Avnery, Tovi; Berejka, Anthony J.

2002-01-01

Advanced electron beams (AEB) has developed a modular, low voltage (80-125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates

Innovative energy efficient low-voltage electron beam emitters

Science.gov (United States)

Felis, Kenneth P.; Avnery, Tovi; Berejka, Anthony J.

2002-03-01

Advanced electron beams (AEB) has developed a modular, low voltage (80-125 keV), high beam current (up to 40 ma), electron emitter with typically 25 cm of beam width, that is housed in an evacuated, returnable chamber that is easy to plug in and connect. The latest in nanofabrication enables AEB to use an ultra-thin beam window. The power supply for AEB's emitter is based on solid-state electronics. This combination of features results in a remarkable electrical efficiency. AEB's electron emitter relies on a touch screen, computer control system. With 80 μm of unit density beam penetration, AEB's electron emitter has gained market acceptance in the curing of opaque, pigmented inks and coatings used on flexible substrates, metals and fiber composites and in the curing of adhesives in foil based laminates.

High-resolution electron microscope image analysis approach for superconductor YBa2Cu3O7-x

International Nuclear Information System (INIS)

Xu, J.; Lu, F.; Jia, C.; Hua, Z.

1991-01-01

In this paper, an HREM (High-resolution electron microscope) image analysis approach has been developed. The image filtering, segmentation and particles extraction based on gray-scale mathematical morphological operations, are performed on the original HREM image. The final image is a pseudocolor image, with the background removed, relatively uniform brightness, filtered slanting elongation, regular shape for every kind of particle, and particle boundaries that no longer touch each other so that the superconducting material structure can be shown clearly

A transmission positron microscope and a scanning positron microscope being built at KEK, Japan

International Nuclear Information System (INIS)

Doyama, M.; Inoue, M.; Kogure, Y.; Kurihara, T.; Yagishita, A.; Shidara, T.; Nakahara, K.; Hayashi, Y.; Yoshiie, T.

2001-01-01

This paper reports the plans of positron microscopes being built at KEK (High Energy Accelerator Research Organization), Tsukuba, Japan improving used electron microscopes. The kinetic energies of positron produced by accelerators or by nuclear decays have not a unique value but show a spread over in a wide range. Positron beam will be guided near electron microscopes, a transmission electron microscope (JEM100S) and a scanning electron microscope (JSM25S). Positrons are slowed down by a tungsten foil, accelerated and focused on a nickel sheet. The monochromatic focused beam will be injected into an electron microscope. The focusing of positrons and electrons is achieved by magnetic system of the electron microscopes. Imaging plates are used to record positron images for the transmission electron microscope. (orig.)

High-Voltage Clock Driver for Photon-Counting CCD Characterization

Science.gov (United States)

Baker, Robert

2013-01-01

A document discusses the CCD97 from e2v technologies as it is being evaluated at Goddard Space Flight Center's Detector Characterization Laboratory (DCL) for possible use in ultra-low background noise space astronomy applications, such as Terrestrial Planet Finder Coronagraph (TPF-C). The CCD97 includes a photoncounting mode where the equivalent output noise is less than one electron. Use of this mode requires a clock signal at a voltage level greater than the level achievable by the existing CCD (charge-coupled-device) electronics. A high-voltage waveform generator has been developed in code 660/601 to support the CCD97 evaluation. The unit generates required clock waveforms at voltage levels from -20 to +50 V. It deals with standard and arbitrary waveforms and supports pixel rates from 50 to 500 kHz. The system is designed to interface with existing Leach CCD electronics.

High-voltage variable-duration pulse generator

International Nuclear Information System (INIS)

Anisimova, T.E.; Akkuratov, E.V.; Gromovenko, V.M.; Nikonov, Yu.P.; Malinin, A.N.

1988-01-01

A high-voltage generator is described that allows pulse duration tau to be varied within wide limits and has high efficiency (at least 50% for tau = 0.5 tau/sub max/) and an amplitude of up to 5 kV, a repetition frequency of up to 200 Hz,and a variable duration of 0-30 μsec. The generator is used in the controller of an electron accelerator

Method and apparatus for a high-resolution three dimensional confocal scanning transmission electron microscope

Science.gov (United States)

de Jonge, Niels [Oak Ridge, TN

2010-08-17

A confocal scanning transmission electron microscope which includes an electron illumination device providing an incident electron beam propagating in a direction defining a propagation axis, and a precision specimen scanning stage positioned along the propagation axis and movable in at least one direction transverse to the propagation axis. The precision specimen scanning stage is configured for positioning a specimen relative to the incident electron beam. A projector lens receives a transmitted electron beam transmitted through at least part of the specimen and focuses this transmitted beam onto an image plane, where the transmitted beam results from the specimen being illuminated by the incident electron beam. A detection system is placed approximately in the image plane.

A design for a subminiature, low energy scanning electron microscope with atomic resolution

International Nuclear Information System (INIS)

Eastham, D. A.; Edmondson, P.; Greene, S.; Donnelly, S.; Olsson, E.; Svensson, K.; Bleloch, A.

2009-01-01

We describe a type of scanning electron microscope that works by directly imaging the electron field-emission sites on a nanotip. Electrons are extracted from the nanotip through a nanoscale aperture, accelerated in a high electric field, and focused to a spot using a microscale Einzel lens. If the whole microscope (accelerating section and lens) and the focal length are both restricted in size to below 10 μm, then computer simulations show that the effects of aberration are extremely small and it is possible to have a system with approximately unit magnification at electron energies as low as 300 eV. Thus a typical emission site of 1 nm diameter will produce an image of the same size, and an atomic emission site will give a resolution of 0.1-0.2 nm (1-2 A). Also, because the beam is not allowed to expand beyond 100 nm in diameter, the depth of field is large and the contribution to the beam spot size from chromatic aberrations is less than 0.02 nm (0.2 A) for 500 eV electrons. Since it is now entirely possible to make stable atomic sized emitters (nanopyramids), it is expected that this instrument will have atomic resolution. Furthermore the brightness of the beam is determined only by the field emission and can be up to 1x10 6 times larger than in a typical (high energy) electron microscope. The advantages of this low energy, bright-beam electron microscope with atomic resolution are described and include the possibility of it being used to rapidly sequence the human genome from a single strand of DNA as well as being able to identify atomic species directly from the elastic scattering of electrons

High-Performance X-ray Detection in a New Analytical Electron Microscope

Science.gov (United States)

Lyman, C. E.; Goldstein, J. I.; Williams, D. B.; Ackland, D. W.; vonHarrach, S.; Nicholls, A. W.; Statham, P. J.

1994-01-01

X-ray detection by energy-dispersive spectrometry in the analytical electron microscope (AEM) is often limited by low collected X-ray intensity (P), modest peak-to-background (P/B) ratios, and limitations on total counting time (tau) due to specimen drift and contamination. A new AFM has been designed with maximization of P. P/B, and tau as the primary considerations. Maximization of P has been accomplished by employing a field-emission electron gun, X-ray detectors with high collection angles, high-speed beam blanking to allow only one photon into the detector at a time, and simultaneous collection from two detectors. P/B has been maximized by reducing extraneous background signals generated at the specimen holder, the polepieces and the detector collimator. The maximum practical tau has been increased by reducing specimen contamination and employing electronic drift correction. Performance improvments have been measured using the NIST standard Cr thin film. The 0-3 steradian solid angle of X-ray collection is the highest value available. The beam blanking scheme for X-ray detection provides 3-4 times greater throughput of X-rays at high count rates into a recorded spectrum than normal systems employing pulse-pileup rejection circuits. Simultaneous X-ray collection from two detectors allows the highest X-ray intensity yet recorded to be collected from the NIST Cr thin film. The measured P/B of 6300 is the highest level recorded for an AEM. In addition to collected X-ray intensity (cps/nA) and P/B measured on the standard Cr film, the product of these can be used as a figure-of-merit to evaluate instruments. Estimated minimum mass fraction (MMF) for Cr measured on the standard NIST Cr thin film is also proposed as a figure-of-merit for comparing X-ray detection in AEMs. Determinations here of the MMF of Cr detectable show at least a threefold improvement over previous instruments.

[Influence of high-voltage electric burn on the microcirculation of heart in rabbit].

Science.gov (United States)

Zhang, Qing-fu; Zhou, Hui-min; Wang, Che-jiang; Shao, Hong-bo

2012-06-01

To study the influence of high-voltage electric burn on the microcirculation of heart in rabbit. One-hundred and twenty New Zealand rabbits of clean grade were divided into control group (C) and electric burn group (EB) according to the random number table, with 60 rabbits in each group. Rabbits in EB group were subjected to high-voltage electric burn (the electrical current flow into the left foreleg at the lateral side of proximal end and out from the corresponding site of the right hind leg) with voltage regulator and experimental transformer. Rabbits in C group were sham injured with the same devices without electrification. At 15 minutes before injury, and 5 minutes, 1, 2, 4, 8 hour (s) post injury (PIM or PIH), ten rabbits in each group were chosen to examine the cardiac apex microcirculation hemoperfusion (CAMH) with laser Doppler hemoperfusion image instrument. The morphologic changes of microvessels of left ventricular wall tissues of 2 rabbits from each of the 10 rabbits collected at above-mentioned time points were observed with light microscope and transmission electron microscope. Auricular vein blood of rabbit was harvested at above-mentioned time points for the determination of aspartate amino transferase (AST), lactate dehydrogenase (LDH), hydroxybutyrate dehydrogenase (HBDH), creatine kinase (CK), and creatine kinase isozyme MB (CK-MB) by full-automatic biochemical analyzer. Data were processed with two-factor analysis of variance and LSD test. (1) The differences between C group and EB group in detection results were statistically significant, with F values from 425.991 to 3046.834, P values all below 0.01. Only the data within EB group were comparable. (2) At PIM 5, the CAMH value of rabbits in EB group was (1.96 ± 0.09) V, which was lower than that at 15 minutes before injury [(4.34 ± 0.35) V, P electric burn can bring damage to the microvessels of heart in rabbits and change blood flow of microcirculation, which should be given adequate

High-resolution electron microscopy of advanced materials

Energy Technology Data Exchange (ETDEWEB)

Mitchell, T.E.; Kung, H.H.; Sickafus, K.E.; Gray, G.T. III; Field, R.D.; Smith, J.F. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.

1997-11-01

This final report chronicles a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The High-Resolution Electron Microscopy Facility has doubled in size and tripled in quality since the beginning of the three-year period. The facility now includes a field-emission scanning electron microscope, a 100 kV field-emission scanning transmission electron microscope (FE-STEM), a 300 kV field-emission high-resolution transmission electron microscope (FE-HRTEM), and a 300 kV analytical transmission electron microscope. A new orientation imaging microscope is being installed. X-ray energy dispersive spectrometers for chemical analysis are available on all four microscopes; parallel electron energy loss spectrometers are operational on the FE-STEM and FE-HRTEM. These systems enable evaluation of local atomic bonding, as well as chemical composition in nanometer-scale regions. The FE-HRTEM has a point-to-point resolution of 1.6 {angstrom}, but the resolution can be pushed to its information limit of 1 {angstrom} by computer reconstruction of a focal series of images. HRTEM has been used to image the atomic structure of defects such as dislocations, grain boundaries, and interfaces in a variety of materials from superconductors and ferroelectrics to structural ceramics and intermetallics.

High voltage switch triggered by a laser-photocathode subsystem

Science.gov (United States)

Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

2013-01-08

A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

An Inexpensive Source of High Voltage

Science.gov (United States)

Saraiva, Carlos

2012-01-01

As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

Transmission Electron Microscope Measures Lattice Parameters

Science.gov (United States)

Pike, William T.

1996-01-01

Convergent-beam microdiffraction (CBM) in thermionic-emission transmission electron microscope (TEM) is technique for measuring lattice parameters of nanometer-sized specimens of crystalline materials. Lattice parameters determined by use of CBM accurate to within few parts in thousand. Technique developed especially for use in quantifying lattice parameters, and thus strains, in epitaxial mismatched-crystal-lattice multilayer structures in multiple-quantum-well and other advanced semiconductor electronic devices. Ability to determine strains in indivdual layers contributes to understanding of novel electronic behaviors of devices.

Direct observation of gliding dislocations interactions with defects in irradiated niobium single crystals by means of the high voltage electronic microscopy (HVEM)

International Nuclear Information System (INIS)

Otero, M.P.

1985-01-01

The interactions of gliding dislocations with defects in irradiated niobium that result in the formation of dislocations channels. The effects in the mechanical behaviour of [941]- and [441]- oriented Nb single crystals due to oxygen addition, neutron and electron irradiation was observed either by macroscopic deformation in a Instron machine or 'in-situ' deformation in the HVEM-High Voltage Electron Microscope. Some specimens were irradiated at IPNS-Intense Pulsed Neutron Source, at 325 K, with 5 x 10 17 n/cm 2 , others were irradiated with electrons in the HVEM. The interactions between gliding dislocations with clusters point defects and dislocations were observed. The primary mechanism for removal of the clusters by the gliding dislocations was the 'sweeping' of the clusters along with the gliding dislocations. As to the point defects, they were 'swept' by the gliding dislocations and left as aligned loops close to the intersections of the gliding dislocations with the upper and lower specimen surfaces. For the illustration of this phenomena, a schematic drawing was made. The mechanism of 'bowing-out' interaction of dislocations with defect clusters was also observed. The reported anomalous slip observed to operate in the [941]- oriented Nb was also directly observed and a qualitive explanation along with a schematic drawing was proposed. This would explain the softenig observed after the yield stress in the [941]- oriented Nb deformed in the Instron machine. (Author) [pt

Development of the Atomic-Resolution Environmental Transmission Electron Microscope

DEFF Research Database (Denmark)

Gai, Pratibha L.; Boyes, Edward D.; Yoshida, Kenta

2016-01-01

The development of the novel atomic-resolution environmental transmission electron microscope (atomic-resolution ETEM) for directly probing dynamic gas–solid reactions in situ at the atomic level under controlled reaction conditions consisting of gas environment and elevated temperatures is descr......The development of the novel atomic-resolution environmental transmission electron microscope (atomic-resolution ETEM) for directly probing dynamic gas–solid reactions in situ at the atomic level under controlled reaction conditions consisting of gas environment and elevated temperatures...... is used to study steels, graphene, nanowires, etc. In this chapter, the experimental setup of the microscope column and its peripherals are described....

Microscopic degradation mechanism of polyimide film caused by surface discharge under bipolar continuous square impulse voltage

International Nuclear Information System (INIS)

Luo Yang; Wu Guang-Ning; Liu Ji-Wu; Peng Jia; Gao Guo-Qiang; Zhu Guang-Ya; Wang Peng; Cao Kai-Jiang

2014-01-01

Polyimide (PI) film is an important type of insulating material used in inverter-fed motors. Partial discharge (PD) under a sequence of high-frequency square impulses is one of the key factors that lead to premature failures in insulation systems of inverter-fed motors. In order to explore the damage mechanism of PI film caused by discharge, an aging system of surface discharge under bipolar continuous square impulse voltage (BCSIV) is designed based on the ASTM 2275 01 standard and the electrical aging tests of PI film samples are performed above the partial discharge inception voltage (PDIV). The chemical bonds of PI polymer chains are analyzed through Fourier transform infrared spectroscopy (FTIR) and the dielectric properties of unaged and aged PI samples are investigated by LCR testers HIOKI 3532-50. Finally, the micro-morphology and micro-structure changes of PI film samples are observed through scanning electron microscopy (SEM). The results show that the physical and chemical effects of discharge cut off the chemical bonds of PI polymer chains. The fractures of ether bond (C—O—C) and imide ring (C—N—C) on the backbone of a PI polymer chain leads to the decrease of molecular weight, which results in the degradation of PI polymers and the generation of new chemical groups and materials, like carboxylic acid, ketone, aldehydes, etc. The variation of microscopic structure of PI polymers can change the orientation ability of polarizable units when the samples are under an AC electric field, which would cause the dielectric constant ε to increase and dielectric loss tan δ to decrease. The SEM images show that the degradation path of PI film is initiated from the surface and then gradually extends to the interior with continuous aging. The injection charge could result in the PI macromolecular chain degradation and increase the trap density in the PI polymer bulk. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Three-dimensional machining of carbon nanotube forests using water-assisted scanning electron microscope processing

Energy Technology Data Exchange (ETDEWEB)

Rajabifar, Bahram; Maschmann, Matthew R., E-mail: MaschmannM@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Kim, Sanha; Hart, A. John [Department of Mechanical Engineering and Laboratory for Manufacturing and Productivity, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Slinker, Keith [Materials and Manufacturing Directorate, AFRL/RX, Air Force Research Lab, Ohio 45433 (United States); Universal Technology Corporation, Beavercreek, Ohio 45424 (United States); Ehlert, Gregory J. [Materials and Manufacturing Directorate, AFRL/RX, Air Force Research Lab, Ohio 45433 (United States)

2015-10-05

We demonstrate that vertically aligned carbon nanotubes (CNTs) can be precisely machined in a low pressure water vapor ambient using the electron beam of an environmental scanning electron microscope. The electron beam locally damages the irradiated regions of the CNT forest and also dissociates the water vapor molecules into reactive species including hydroxyl radicals. These species then locally oxidize the damaged region of the CNTs. The technique offers material removal capabilities ranging from selected CNTs to hundreds of cubic microns. We study how the material removal rate is influenced by the acceleration voltage, beam current, dwell time, operating pressure, and CNT orientation. Milled cuts with depths between 0–100 microns are generated, corresponding to a material removal rate of up to 20.1 μm{sup 3}/min. The technique produces little carbon residue and does not disturb the native morphology of the CNT network. Finally, we demonstrate direct machining of pyramidal surfaces and re-entrant cuts to create freestanding geometries.

Three-dimensional machining of carbon nanotube forests using water-assisted scanning electron microscope processing

Science.gov (United States)

Rajabifar, Bahram; Kim, Sanha; Slinker, Keith; Ehlert, Gregory J.; Hart, A. John; Maschmann, Matthew R.

2015-10-01

We demonstrate that vertically aligned carbon nanotubes (CNTs) can be precisely machined in a low pressure water vapor ambient using the electron beam of an environmental scanning electron microscope. The electron beam locally damages the irradiated regions of the CNT forest and also dissociates the water vapor molecules into reactive species including hydroxyl radicals. These species then locally oxidize the damaged region of the CNTs. The technique offers material removal capabilities ranging from selected CNTs to hundreds of cubic microns. We study how the material removal rate is influenced by the acceleration voltage, beam current, dwell time, operating pressure, and CNT orientation. Milled cuts with depths between 0-100 microns are generated, corresponding to a material removal rate of up to 20.1 μm3/min. The technique produces little carbon residue and does not disturb the native morphology of the CNT network. Finally, we demonstrate direct machining of pyramidal surfaces and re-entrant cuts to create freestanding geometries.

Computer applications: Automatic control system for high-voltage accelerator

International Nuclear Information System (INIS)

Bryukhanov, A.N.; Komissarov, P.Yu.; Lapin, V.V.; Latushkin, S.T.. Fomenko, D.E.; Yudin, L.I.

1992-01-01

An automatic control system for a high-voltage electrostatic accelerator with an accelerating potential of up to 500 kV is described. The electronic apparatus on the high-voltage platform is controlled and monitored by means of a fiber-optic data-exchange system. The system is based on CAMAC modules that are controlled by a microprocessor crate controller. Data on accelerator operation are represented and control instructions are issued by means of an alphanumeric terminal. 8 refs., 6 figs

High Resolution Transmission Electron Microscope Observation of Zero-Strain Deformation Twinning Mechanisms in Ag

Science.gov (United States)

Liu, L.; Wang, J.; Gong, S. K.; Mao, S. X.

2011-04-01

We have observed a new deformation-twinning mechanism using the high resolution transmission electron microscope in polycrystalline Ag films, zero-strain twinning via nucleation, and the migration of a Σ3{112} incoherent twin boundary (ITB). This twinning mechanism produces a near zero macroscopic strain because the net Burgers vectors either equal zero or are equivalent to a Shockley partial dislocation. This observation provides new insight into the understanding of deformation twinning and confirms a previous hypothesis: detwinning could be accomplished via the nucleation and migration of Σ3{112} ITBs. The zero-strain twinning mechanism may be unique to low staking fault energy metals with implications for their deformation behavior.

Transmission electron microscope studies of crystalline LiNbO3

International Nuclear Information System (INIS)

Pareja, R.; Gonzalez, R.; Chen, Y.

1984-01-01

Transmission electron microscope investigations in both as-grown and hydrogen-reduced LiNbO 3 reveal that niobium oxide precipitates can be produced by in situ irradiations in the electron microscope. The precipitation process is produced by a combined effect of ionizing electrons and the thermal heating of the specimens during irradiation. It is proposed that the composition of the precipitates is primarily Nb 2 O 5

Voltage-pulse generator for electron gun

International Nuclear Information System (INIS)

Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

1987-01-01

A voltage-pulse generator with combined capacitive and inductive storage devices of an electron gun is described. The current interrupter is a hydrogen thyratron (TGI1-100/8, TGI1-500/16, or TGI1-1000/25) installed in a short magnetic lens. The current interruption time of the thyratrons is 100-300 nsec. When the capacitive storage device is charged to 1 kV, a voltage pulse with an amplitude of 25 kV is obtained at the load

Suppressing voltage transients in high voltage power supplies

International Nuclear Information System (INIS)

Lickel, K.F.; Stonebank, R.

1979-01-01

A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

Experimental validation of prototype high voltage bushing

Science.gov (United States)

Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

2017-08-01

Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

Electron microscopic radioautography of the cell

International Nuclear Information System (INIS)

Sarkisov, D.S.; Pal'tsyn, A.A.; Vtyurin, B.V.

1980-01-01

This monograph is the first one in the world literature that gives th generalised experience in application of the up-to-date method of structural and functional analysis, i.e. of electron-microscopic autography to study the dynamics of intracellular processes under normal conditions as well as under some pathogenic effects. Given herein are the data on synthesis of DNA and RNA in various structures of the nucleus, particularly in nucleoli, the regularities of the synthesis processes in the organellae of the same name are discussed; illustrated are the possibilities of structure analysis of biosynthesis intensity variations in the nucleus and cytoplasma in cells of liver miocardium, granulation tissue at different stages of morphological process; the results of electron-microscopic radioautography application in study of clinical biopsy material are given and the data obtained are discussed in the light of general pathology problems

Laboratory design for high-performance electron microscopy

Energy Technology Data Exchange (ETDEWEB)

O' Keefe, Michael A.; Turner, John H.; Hetherington, Crispin J.D.; Cullis, A.G.; Carragher, Bridget; Jenkins, Ron; Milgrim, Julie; Milligan,Ronald A.; Potter, Clinton S.; Allard, Lawrence F.; Blom, Douglas A.; Degenhardt, Lynn; Sides, William H.

2004-04-23

Proliferation of electron microscopes with field emission guns, imaging filters and hardware spherical aberration correctors (giving higher spatial and energy resolution) has resulted in the need to construct special laboratories. As resolutions improve, transmission electron microscopes (TEMs) and scanning transmission electron microscopes (STEMs) become more sensitive to ambient conditions. State-of-the-art electron microscopes require state-of-the-art environments, and this means careful design and implementation of microscope sites, from the microscope room to the building that surrounds it. Laboratories have been constructed to house high-sensitive instruments with resolutions ranging down to sub-Angstrom levels; we present the various design philosophies used for some of these laboratories and our experiences with them. Four facilities are described: the National Center for Electron Microscopy OAM Laboratory at LBNL; the FEGTEM Facility at the University of Sheffield; the Center for Integrative Molecular Biosciences at TSRI; and the Advanced Microscopy Laboratory at ORNL.

Development of a SEM-based low-energy in-line electron holography microscope for individual particle imaging.

Science.gov (United States)

Adaniya, Hidehito; Cheung, Martin; Cassidy, Cathal; Yamashita, Masao; Shintake, Tsumoru

2018-05-01

A new SEM-based in-line electron holography microscope has been under development. The microscope utilizes conventional SEM and BF-STEM functionality to allow for rapid searching of the specimen of interest, seamless interchange between SEM, BF-STEM and holographic imaging modes, and makes use of coherent low-energy in-line electron holography to obtain low-dose, high-contrast images of light element materials. We report here an overview of the instrumentation and first experimental results on gold nano-particles and carbon nano-fibers for system performance tests. Reconstructed images obtained from the holographic imaging mode of the new microscope show substantial image contrast and resolution compared to those acquired by SEM and BF-STEM modes, demonstrating the feasibility of high-contrast imaging via low-energy in-line electron holography. The prospect of utilizing the new microscope to image purified biological specimens at the individual particle level is discussed and electron optical issues and challenges to further improve resolution and contrast are considered. Copyright © 2018 Elsevier B.V. All rights reserved.

Calibration for medium resolution off-axis electron holography using a flexible dual-lens imaging system in a JEOL ARM 200F microscope

International Nuclear Information System (INIS)

Cantu-Valle, Jesus; Ruiz-Zepeda, Francisco; Mendoza-Santoyo, Fernando; Jose-Yacaman, Miguel; Ponce, Arturo

2014-01-01

In this work the calibration of a medium resolution off-axis electron holography using a dual-lens imaging system in a JEOL ARM 200F is shown. The objective dual-lens configuration allows adjusting the field of view from 35 nm to 2.5 μm. Subsequently, the parameters used in phase shift reconstruction were calibrated considering biprism voltage versus fringe spacing (σ) and versus fringe width (W). The reliability of the transmission electron microscope performance using these parameters was achieved using gold nanoparticles of known size and adjusting the excitation voltage of the lenses. - Highlights: • We presented the off-axis electron holography calibration in dual-lens mode of a JEOL ARM 200F. • We provide optimal conditions for a wide field of views varying the objective lens excitation. • The calibration was made using Au-nanoparticles controlling fringe width, spacing and contrast. • Application of electron holography to nanoparticles is also shown

A new approach to nuclear microscopy: The ion-electron emission microscope

International Nuclear Information System (INIS)

Doyle, B.L.; Vizkelethy, G.; Walsh, D.S.; Senftinger, B.; Mellon, M.

1998-01-01

A new multidimensional high lateral resolution ion beam analysis technique, Ion-Electron Emission Microscopy or IEEM is described. Using MeV energy ions, IEEM is shown to be capable of Ion Beam Induced Charge Collection (IBICC) measurements in semiconductors. IEEM should also be capable of microscopically and multidimensionally mapping the surface and bulk composition of solids. As such, IIEM has nearly identical capabilities as traditional nuclear microprobe analysis, with the advantage that the ion beam does not have to be focused. The technique is based on determining the position where an individual ion enters the surface of the sample by projection secondary electron emission microscopy. The x-y origination point of a secondary electron, and hence the impact coordinates of the corresponding incident ion, is recorded with a position sensitive detector connected to a standard photoemission electron microscope (PEEM). These signals are then used to establish coincidence with IBICC, atomic, or nuclear reaction induced ion beam analysis signals simultaneously caused by the incident ion

Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

Science.gov (United States)

Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

2014-11-01

The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

High-voltage test and training of plastic streamer tubes for the DELPHI hadron calorimeter

International Nuclear Information System (INIS)

Alekseev, G.D.; Cellar, S.; Khomenko, B.A.; Korytov, A.V.; Kulinich, P.A.; Micelmacher, G.V.; Sedykh, Yu.V.; Toledo, R.

1987-01-01

The results of high-voltage test and training of plastic streamer tubes of the DELPHI hadron calorimeter are presented. The testing technique is considered in detail. The equipment for high-voltage training consists of a mini-computer, CAMAC-electronics, a controllable high-voltage supply and a digital ampermeter. The experimental results shows that high-voltage training of streamer tubes improves their characteristics. The value of dark current decreased up to 1 μA. The operational voltage range increased by a value more than 300 V

Voltage surges induced in transformer secondaries with loads characterized by sensitive electronic equipment

Energy Technology Data Exchange (ETDEWEB)

Cogo, Joao Roberto [GSI Engenharia e Consultoria Ltda., Taubate, SP (Brazil)], Email: gsi@gsiconsultoria.com.br; Dommel, Hermann Wilhelm [University of British Columbia, Vancouver (Canada)], Email: hermannd@ece.ubc.ca

2007-07-01

The grounding of sensitive electronic equipment such as computers, programmable logic controllers (PLC), process control systems, and other electronic equipment is one of the most important considerations towards obtaining an efficient operation of such systems. Such equipment, which for the purposes of this work is called 'Sensitive Electronic Equipment - SEE' is very sensitive to faults and low intensity random voltages which have no effect upon the electrical power equipment and upon human beings. In this work, the grounding problem is evaluated, to guide the user on the proper installation of SEEs, so as to prevent them from being damaged. The following items will be discussed: voltages which SEEs are subject to during incidence of atmospheric surges in the distribution overhead lines to which they are connected; sustained voltage that the high voltage supply of SEEs must be able to withstand during line-to-ground faults that originate from atmospheric surges that reach the transmission lines which are connected to the electrical power self producers (or electrical power independent producers). (author)

Electron irradiation-induced defects in {beta}-SiC

Energy Technology Data Exchange (ETDEWEB)

Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

1996-04-01

To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

Exploring the environmental transmission electron microscope

DEFF Research Database (Denmark)

Wagner, Jakob B.; Cavalca, Filippo; Damsgaard, Christian D.

2012-01-01

of the opportunities that the environmental TEM (ETEM) offers when combined with other in situ techniques will be explored, directly in the microscope, by combining electron-based and photon-based techniques and phenomena. In addition, application of adjacent setups using sophisticated transfer methods...

A Simple Metric for Determining Resolution in Optical, Ion, and Electron Microscope Images.

Science.gov (United States)

Curtin, Alexandra E; Skinner, Ryan; Sanders, Aric W

2015-06-01

A resolution metric intended for resolution analysis of arbitrary spatially calibrated images is presented. By fitting a simple sigmoidal function to pixel intensities across slices of an image taken perpendicular to light-dark edges, the mean distance over which the light-dark transition occurs can be determined. A fixed multiple of this characteristic distance is then reported as the image resolution. The prefactor is determined by analysis of scanning transmission electron microscope high-angle annular dark field images of Si. This metric has been applied to optical, scanning electron microscope, and helium ion microscope images. This method provides quantitative feedback about image resolution, independent of the tool on which the data were collected. In addition, our analysis provides a nonarbitrary and self-consistent framework that any end user can utilize to evaluate the resolution of multiple microscopes from any vendor using the same metric.

Effect of the change in the load resistance on the high voltage pulse transformer of the intense electron-beam accelerators.

Science.gov (United States)

Cheng, Xin-bing; Liu, Jin-liang; Qian, Bao-liang; Zhang, Yu; Zhang, Hong-bo

2009-11-01

A high voltage pulse transformer (HVPT) is usually used as a charging device for the pulse forming line (PFL) of intense electron-beam accelerators (IEBAs). Insulation of the HVPT is one of the important factors that restrict the development of the HVPT. Until now, considerable effort has been focused on minimizing high field regions to avoid insulation breakdown between windings. Characteristics of the HVPT have been widely discussed to achieve these goals, but the effects of the PFL and load resistance on HVPT are usually neglected. In this paper, a HVPT is used as a charging device for the PFL of an IEBA and the effect of the change in the load resistance on the HVPT of the IEBA is presented. When the load resistance does not match the wave impedance of the PFL, a high-frequency bipolar oscillating voltage will occur, and the amplitude of the oscillating voltage will increase with the decrease in the load resistance. The load resistance approximates to zero and the amplitude of the oscillating voltage is much higher. This makes it easier for surface flashover along the insulation materials to form and decrease the lifetime of the HVPT.

Development of high voltage lead wires using electron beam irradiation

International Nuclear Information System (INIS)

Bae Hunjai; Sohn Hosoung; Choi Dongjung

1995-01-01

It is known to those skilled to the art that the electric wires used in high voltage operating electric equipments such as TV sets, microwave ovens, duplicators and etc., have such a structure that a conductor is coated with an insulating layer which is encapsulated with a protecting jacket layer. The electric wire specification such as UL and CSA requires superior cut-through property and flame-retardant property of the wire for utilization safety. The cut-through property of insulation material, for example, high density polyethylene, can be increased by crosslinking of the polymer. Also the flame-retardant property of jacket material which protects the flammable inner insulation can be raised by flame-retardant formulating of the material. In the wire and cable industry, crosslinking by electron beam processing is more effective than that by chemical processing in the viewpoint of through-put rate of the products. The jacket layer of the wire plays the role of protecting the insulation material from burning. The protecting ability of the jacket is related to its inherent flammability and formability of swollen carbonated layer when burned. Crosslinking of the material gives a good formability of swollen carbonated layer, and it protects the insulation material from direct flame. In formulating the flame-retardant jacket material, a crosslinking system must be considered with base polymers and other flame-retardant additives. (Author)

Development of high voltage lead wires using electron beam irradiation

International Nuclear Information System (INIS)

Bae Hunjai; Sohn Hosoung; Choi Dongjung

1995-01-01

It is known to those skilled to the art that the electric wires used in high voltage operating electric equipment such as TV sets, microwave ovens, duplicators etc., have such a structure that a conductor is coated with an insulating layer which is encapsulated with a protecting jacket layer. The electric wire specification such as UL and CSA requires superior cut-through and flame-retardant property of the wire for utilization safety. The cut-through property of insulation material, for example, high density polyethylene, can be increased by crosslinking of the polymer. Also the flame-retardant property of jacket material which protects the flammable inner insulation can be raised by flame-retardant formulating of the material. In the wire and cable industry, crosslinking by electron beam processing is more effective than that by chemical processing in the viewpoint of through-put rate of the products. The jacket layer of the wire plays the role of protecting the insulation material from burning. The protecting ability of the jacket is related to its inherent flammability and formability of swollen carbonated layer when burned. Crosslinking of the material gives a good formability of swollen carbonated layer, and it protects the insulation material from direct flame. In formulating the flame-retardant jacket material, a crosslinking system must be considered with base polymers and other flame-retardant additives. (Author)

High voltage test techniques

CERN Document Server

Kind, Dieter

2001-01-01

The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

Large area fabrication of plasmonic nanoparticle grating structure by conventional scanning electron microscope

International Nuclear Information System (INIS)

Sudheer,; Tiwari, P.; Rai, V. N.; Srivastava, A. K.; Mukharjee, C.

2015-01-01

Plasmonic nanoparticle grating (PNG) structure of different periods has been fabricated by electron beam lithography using silver halide based transmission electron microscope film as a substrate. Conventional scanning electron microscope is used as a fabrication tool for electron beam lithography. Optical microscope and energy dispersive spectroscopy (EDS) have been used for its morphological and elemental characterization. Optical characterization is performed by UV-Vis absorption spectroscopic technique

Progress in x-ray microanalysis in the analytical electron microscope

International Nuclear Information System (INIS)

Williams, D.B.

1987-01-01

Analytical electron microscopes (AEM) consisting of x-ray energy dispersive spectrometers (EDS) interfaced to scanning transmission electron microscopes have been available for more than a decade. During that time, progress towards reaching the fundamental limits of the technique has been slow. The progress of x-ray microanalysis in AEM is examined in terms of x-ray detector technology; the EDS/AEM interface; accuracy of microanalysis; and spatial resolution and detectability limits. X-ray microanalysis in the AEM has substantial room for improvement in terms of the interface between the detector and the microscope. Advances in microscope design and software should permit 10nm resolution with detectability limits approaching 0.01wt percent. 16 refs., 2 figs., 1 tab

Current–voltage characteristics of manganite–titanite perovskite junctions

Directory of Open Access Journals (Sweden)

Benedikt Ifland

2015-07-01

Full Text Available After a general introduction into the Shockley theory of current voltage (J–V characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1−yNbyO3, y = 0.002 and p-doped Pr1−xCaxMnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC in a thin cross plane lamella of the junction. In the J–V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron–polaron hole–polaron pair generation and separation at the interface.

Optical and mechanical design for 1 nm resolution Auger spectroscopy in an electron microscope

International Nuclear Information System (INIS)

Bleeker, A.J.

1991-01-01

Detailed information about the atomic structure of surfaces and interfaces is vital for the progress in materials science and physics. One widely used surface sensitive technique is Auger spectroscopy (AS). This technique, in which the electron energy spectrum emerging from the sample is evaluated, gives information about the average elemental composition of the surface over a relative large surface area (>30nm). Electron microscopy (EM), on the other hand, is capable of producing surface structural, but no elemental, information with almost atomic resolution. EM and AS techniques have not been combined so far because of the different nature of the instrumentation used in both techniques. In AS instruments the sample is placed in an Ultra High Vacuum (UHV) system with a relatively large open space around the sample. In EM the sample is situated in the tight volume between the magnetic polepieces of the probe forming objective lens. The space around the sample is therefore tight. Furthermore the vacuum in most electron microscopes is not in UHV range. Radical mechanical changes to improve the vacuum are necessary to do AS in an electron microscope. Since the sample is immersed in the strong magnetic field of the objective lens the Auger electrons can not be extracted with conventional electrostatical methods. The only possibility to extract the Auger electrons is through the upper bore of the objective lens. However, this has large implications on the optical system of the microscope and requires a thorough investigation of the extraction of the Auger electrons. In this work it will be discussed how the surface sensitive AS can be combined with the high spatial resolution of the electron microscope in a practical instrument. (author). 102 refs.; 81 figs.; 4 tabs

Contribution to high voltage matrix switches reliability

International Nuclear Information System (INIS)

Lausenaz, Yvan

2000-01-01

Nowadays, power electronic equipment requirements are important, concerning performances, quality and reliability. On the other hand, costs have to be reduced in order to satisfy the market rules. To provide cheap, reliability and performances, many standard components with mass production are developed. But the construction of specific products must be considered following these two different points: in one band you can produce specific components, with delay, over-cost problems and eventuality quality and reliability problems, in the other and you can use standard components in a adapted topologies. The CEA of Pierrelatte has adopted this last technique of power electronic conception for the development of these high voltage pulsed power converters. The technique consists in using standard components and to associate them in series and in parallel. The matrix constitutes high voltage macro-switch where electrical parameters are distributed between the synchronized components. This study deals with the reliability of these structures. It brings up the high reliability aspect of MOSFETs matrix associations. Thanks to several homemade test facilities, we obtained lots of data concerning the components we use. The understanding of defects propagation mechanisms in matrix structures has allowed us to put forwards the necessity of robust drive system, adapted clamping voltage protection, and careful geometrical construction. All these reliability considerations in matrix associations have notably allowed the construction of a new matrix structure regrouping all solutions insuring reliability. Reliable and robust, this product has already reaches the industrial stage. (author) [fr

In-Situ Microprobe Observations of Dispersed Oil with Low-Temperature Low-Vacuum Scanning Electron Microscope

International Nuclear Information System (INIS)

Mohsen, H.T.

2010-01-01

A low cost cryostat stage from high heat capacity material is designed and constructed, in attempt to apply size distribution techniques for examination of oil dispersions. Different materials were tested according to their heat capacity to keep the liquid under investigation in frozen state as long as possible during the introduction of the cryostat stage to the low-vacuum scanning electron microscope. Different concentrations of non ionic surfactant were added to artificially contaminated with 10000 ppm Balayeam base oil in 3.5 % saline water, where oil and dispersing liquid have been added and shacked well to be investigated under the microscope as fine frozen droplets. The efficiency of dispersion was examined using low temperature low-vacuum scanning electron microscope. The shape and size distributions of freeze oil droplets were studied by digital imaging processing technique in conjunction with scanning electron microscope counting method. Also elemental concentration of oil droplets was analyzed.

Electron-microscopic autoradiography of tritiated testosterone in rat testis

International Nuclear Information System (INIS)

Frederik, P.M.; Molen, H.J. van der; Galjaard, H.; Klepper, D.

1977-01-01

The feasibility of a technique for autoradiography of diffusible substances has been further tested by analysing the localization of steroids in rats testes with the light- and electron-microscope. Testes of rats were perfused with tritiated testosterone (3 min) followed by 15-min perfusion with buffer containing a 100-fold excess of unlabelled testosterone. Tissue samples were frozen, freeze dried, fixed in osmium vapour and embedded in Epon. To exclude extraction of steroids, contact with water and other solvents was prevented during cutting of thin sections on an ultracryotome and further treatment for autoradiography. Light- and electron-microscopic observations indicated that the highest concentration of labelled testosterone was present within the basal parts of the Sertoli cell cytoplasm and in lipid inclusions of Sertoli cells within the seminiferous tubules. This is the first account of autoradiography of steroids at the electron-microscope level. (author)

High voltage fast switches for nuclear applications

International Nuclear Information System (INIS)

Chatroux, D.; Lausenaz, Y.; Villard, J.F.; Lafore, D.

1999-01-01

SILVA process consists in a selective ionization of the 235 uranium isotope, using laser beams generated by dye lasers pumped by copper vapour laser (C.V.L.). SILVA involves power electronic for 3 power supplies: - copper vapour laser power supply, - extraction power supply to generate the electric field in the vapour, and - electron beam power supply for vapour generation. This article reviews the main switches that are proposed on the market or are on development and that could be used in SILVA power supplies. The SILVA technical requirements are: high power, high voltage and very short pulses (200 ns width). (A.C.)

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

Energy Technology Data Exchange (ETDEWEB)

Erofeev, E. V., E-mail: erofeev@micran.ru [Tomsk State University of Control Systems and Radioelectronics, Research Institute of Electrical-Communication Systems (Russian Federation); Fedin, I. V.; Kutkov, I. V. [Research and Production Company “Micran” (Russian Federation); Yuryev, Yu. N. [National Research Tomsk Polytechnic University, Institute of Physics and Technology (Russian Federation)

2017-02-15

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

International Nuclear Information System (INIS)

Erofeev, E. V.; Fedin, I. V.; Kutkov, I. V.; Yuryev, Yu. N.

2017-01-01

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V_t_h = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V_t_h = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

Isotope analysis in the transmission electron microscope.

Science.gov (United States)

Susi, Toma; Hofer, Christoph; Argentero, Giacomo; Leuthner, Gregor T; Pennycook, Timothy J; Mangler, Clemens; Meyer, Jannik C; Kotakoski, Jani

2016-10-10

The Ångström-sized probe of the scanning transmission electron microscope can visualize and collect spectra from single atoms. This can unambiguously resolve the chemical structure of materials, but not their isotopic composition. Here we differentiate between two isotopes of the same element by quantifying how likely the energetic imaging electrons are to eject atoms. First, we measure the displacement probability in graphene grown from either 12 C or 13 C and describe the process using a quantum mechanical model of lattice vibrations coupled with density functional theory simulations. We then test our spatial resolution in a mixed sample by ejecting individual atoms from nanoscale areas spanning an interface region that is far from atomically sharp, mapping the isotope concentration with a precision better than 20%. Although we use a scanning instrument, our method may be applicable to any atomic resolution transmission electron microscope and to other low-dimensional materials.

Dynamic Low-Vacuum Scanning Electron Microscope Freeze Drying Observation for Fresh Water Algae

International Nuclear Information System (INIS)

Mohsen, H.T.; Ghaly, W.A.; Zahran, N.F.; Helal, A.I.

2010-01-01

A new perpetration method for serving in dynamic examinations of the fresh water algae is developed in connection with the Low-Vacuum Scanning Electron Microscope (LV-SEM) freeze drying technique. Specimens are collected from fresh water of Ismailia channel then transferred directly to freeze by liquid nitrogen and dried in the chamber of the scanning electron microscope in the low vacuum mode. Scanning electron micrographs revealed that the drying method presented the microstructure of algae. Dehydration in a graded ethanol series is not necessary in the new method. Dried algae specimen is observed in SEM high vacuum mode after conductive coating at higher resolution. Low-vacuum SEM freeze drying technique is a simple, time-saving and reproducible method for scanning electron microscopy that is applicable to various aquatic microorganisms covered with soft tissues.

Quantitative methods for the analysis of electron microscope images

DEFF Research Database (Denmark)

Skands, Peter Ulrik Vallø

1996-01-01

The topic of this thesis is an general introduction to quantitative methods for the analysis of digital microscope images. The images presented are primarily been acquired from Scanning Electron Microscopes (SEM) and interfermeter microscopes (IFM). The topic is approached though several examples...... foundation of the thesis fall in the areas of: 1) Mathematical Morphology; 2) Distance transforms and applications; and 3) Fractal geometry. Image analysis opens in general the possibility of a quantitative and statistical well founded measurement of digital microscope images. Herein lies also the conditions...

Development of a high power free-electron laser

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Min; Lee, Byung Chul; Kim, Sun Kook; Jung, Yung Wook; Cho, Sung Oh [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

1995-01-01

A millimeter-wave free electron laser (FEL) driven by a recirculating electrostatic accelerator has been developed. The wavelength of the FEL is tunable in the range of 3 - 12 mm by tuning the energy of the electron beam. The output power is estimated to be 1 kW. The electrostatic accelerator is composed of high-current electron gun, acceleration tube, high-voltage generator, high-voltage terminal, deceleration tube, electron collator, and vacuum pumps. Two types of LaB{sub 6}-based thermionic electron guns (triode gun and diode gun) and their power supplies have been developed. The voltage of the guns is 30 kV and the output current is - 2 A. A beam-focusing planar undulator and a permanent-magnet helical undulator have been developed and 3D trajectories of electron beam in the undulators have been calculated to find optimal input condition of electron beam. 135 figs, 15 pix, 17 tabs, 98 refs. (Author).

Development of a high power free-electron laser

International Nuclear Information System (INIS)

Lee, Jong Min; Lee, Byung Chul; Kim, Sun Kook; Jung, Yung Wook; Cho, Sung Oh

1995-01-01

A millimeter-wave free electron laser (FEL) driven by a recirculating electrostatic accelerator has been developed. The wavelength of the FEL is tunable in the range of 3 - 12 mm by tuning the energy of the electron beam. The output power is estimated to be 1 kW. The electrostatic accelerator is composed of high-current electron gun, acceleration tube, high-voltage generator, high-voltage terminal, deceleration tube, electron collator, and vacuum pumps. Two types of LaB 6 -based thermionic electron guns (triode gun and diode gun) and their power supplies have been developed. The voltage of the guns is 30 kV and the output current is - 2 A. A beam-focusing planar undulator and a permanent-magnet helical undulator have been developed and 3D trajectories of electron beam in the undulators have been calculated to find optimal input condition of electron beam. 135 figs, 15 pix, 17 tabs, 98 refs. (Author)

System for high-voltage control detectors with large number photomultipliers

International Nuclear Information System (INIS)

Donskov, S.V.; Kachanov, V.A.; Mikhajlov, Yu.V.

1985-01-01

A simple and inexpensive on-line system for hihg-voltage control which is designed for detectors with a large number of photomultipliers is developed and manufactured. It has been developed for the GAMC type hodoscopic electromagnetic calorimeters, comprising up to 4 thousand photomultipliers. High voltage variation is performed by a high-speed potentiometer which is rotated by a microengine. Block-diagrams of computer control electronics are presented. The high-voltage control system has been used for five years in the IHEP and CERN accelerator experiments. The operation experience has shown that it is quite simple and convenient in operation. In case of about 6 thousand controlled channels in both experiments no potentiometer and microengines failures were observed

Absolute Determination of High DC Voltages by Means of Frequency Measurement

Science.gov (United States)

Peier, Dirk; Schulz, Bernd

1983-01-01

A novel absolute measuring procedure is presented for the definition of fixed points of the voltage in the 100 kV range. The method is based on transit time measurements with accelerated electrons. By utilizing the selective interaction of a monoenergetic electron beam with the electromagnetic field of a special cavity resonator, the voltage is referred to fundamental constants and the base unit second. Possible balance voltages are indicated by a current detector. Experimental investigations are carried out with resonators in the normal conducting range. With a copper resonator operating at the temperature of boiling nitrogen (77 K), the relative uncertainty of the voltage points is estimated to be +/- 4 × 10-4. The technically realizable uncertainty can be reduced to +/- 1 × 10-5 by the proposed application of a superconducting niobium resonator. Thus this measuring device becomes suitable as a primary standard for the high-voltage range.

Decontamination of digital image sensors and assessment of electron microscope performance in a BSL-3 containment

Directory of Open Access Journals (Sweden)

Michael B. Sherman

2015-05-01

Full Text Available A unique biological safety level (BSL-3 cryo-electron microscopy facility with a 200 keV high-end cryo-electron microscope has been commissioned at the University of Texas Medical Branch (UTMB to study the structure of viruses and bacteria classified as select agents. We developed a microscope decontamination protocol based on chlorine dioxide gas with a continuous flow system. In this paper we report on testing digital camera sensors (both CCD and CMOS direct detector in a BSL-3 environment, and microscope performance after chlorine dioxide (ClO2 decontamination cycles.

Scanning Tunneling Microscope For Use In Vacuum

Science.gov (United States)

Abel, Phillip B.

1993-01-01

Scanning tunneling microscope with subangstrom resolution developed to study surface structures. Although instrument used in air, designed especially for use in vacuum. Scanning head is assembly of small, mostly rigid components made of low-outgassing materials. Includes coarse-positioning mechanical-translation stage, on which specimen mounted by use of standard mounting stub. Tunneling tip mounted on piezoelectric fine-positioning tube. Application of suitable voltages to electrodes on piezoelectric tube controls scan of tunneling tip across surface of specimen. Electronic subsystem generates scanning voltages and collects data.

Electronic zooming TV readout system for an x-ray microscope

International Nuclear Information System (INIS)

Kinoshita, K.; Matsumura, T.; Inagaki, Y.; Hirai, N.; Sugiyama, M.; Kihara, H.; Watanabe, N.; Shimanuki, Y.

1993-01-01

The electronic zooming TV readout system using the X-ray zooming tube has been developed for purposes of real-time readout of very high resolution X-ray image, e.g. the output image from an X-ray microscope. The system limiting resolution is 0.2∼0.3 μm and it is easy to operate in practical applications

The Titan Environmental Transmission Electron Microscope

DEFF Research Database (Denmark)

Hansen, Thomas Willum; Wagner, Jakob Birkedal; Jinschek, Jörg R.

2009-01-01

University of Denmark (DTU) provides a unique combination of techniques for studying materials of interest to the catalytic as well as the electronics and other communities [5]. DTU’s ETEM is based on the FEI Titan platform providing ultrahigh microscope stability pushing the imaging resolution into the sub...

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Energy Technology Data Exchange (ETDEWEB)

Chao, Jin Yu [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Yuan, Zhi Guo, E-mail: ncityzg@163.com [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China)

2015-12-21

Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

Theoretical approach to the scanning tunneling microscope

International Nuclear Information System (INIS)

Noguera, C.

1990-01-01

Within a one-electron approach, based on a Green's-function formalism, a nonperturbative expression for the tunneling current is obtained and used to discuss which spectroscopic information may be deduced from a scanning-tunneling-microscope experiment. It is shown up to which limits the voltage dependence of the tunneling current reproduces the local density of states at the surface, and how the reflection coefficients of the electronic waves at the surface may modify it

Superposed Redox Chemistry of Fused Carbon Rings in Cyclooctatetraene-Based Organic Molecules for High-Voltage and High-Capacity Cathodes.

Science.gov (United States)

Zhao, Xiaolin; Qiu, Wujie; Ma, Chao; Zhao, Yingqin; Wang, Kaixue; Zhang, Wenqing; Kang, Litao; Liu, Jianjun

2018-01-24

Even though many organic cathodes have been developed and have made a significant improvement in energy density and reversibility, some organic materials always generate relatively low voltage and limited discharge capacity because their energy storage mechanism is solely based on redox reactions of limited functional groups [N-O, C═X (X = O, N, S)] linking to aromatic rings. Here, a series of cyclooctatetraene-based (C 8 H 8 ) organic molecules were demonstrated to have electrochemical activity of high-capacity and high-voltage from carbon rings by means of first-principles calculations and electronic structure analysis. Fused molecules of C 8 -C 4 -C 8 (C 16 H 12 ) and C 8 -C 4 -C 8 -C 4 -C 8 (C 24 H 16 ) contain, respectively, four and eight electron-deficient carbons, generating high-capacity by their multiple redox reactions. Our sodiation calculations predict that C 16 H 12 and C 24 H 16 exhibit discharge capacities of 525.3 and 357.2 mA h g -1 at the voltage change from 3.5 to 1.0 V and 3.7 to 1.3 V versus Na + /Na, respectively. Electronic structure analysis reveals that the high voltages are attributed to superposed electron stabilization mechanisms, including double-bond reformation and aromatization from carbon rings. High thermodynamic stability of these C 24 H 16 -based systems strongly suggests feasibility of experimental realization. The present work provides evidence that cyclooctatetraene-based organic molecules fused with the C 4 ring are promising in designing high-capacity and high-voltage organic rechargeable cathodes.

Electric field effects in scanning tunneling microscope imaging

DEFF Research Database (Denmark)

Stokbro, Kurt; Quaade, Ulrich; Grey, Francois

1998-01-01

We present a high-voltage extension of the Tersoff-Hamann theory of scanning tunneling microscope (STM) images, which includes the effect of the electric field between the tip and the sample. The theoretical model is based on first-principles electronic structure calculations and has no adjustable...... parameters. We use the method to calculate theoretical STM images of the monohydrate Si(100)-H(2x1) surface with missing hydrogen defects at -2V and find an enhanced corrugation due to the electric field, in good agreement with experimental images....

Transients of modern power electronics

CERN Document Server

Bai, Hua

2011-01-01

In high power, high voltage electronics systems, a strategy to manage short timescale energy imbalances is fundamental to the system reliability. Without a theoretical framework, harmful local convergence of energy can affect the dynamic process of transformation, transmission, and storage which create an unreliable system. With an original approach that encourages understanding of both macroscopic and microscopic factors, the authors offer a solution. They demonstrate the essential theory and methodology for the design, modeling and prototyping of modern power electronics converters to crea

The effect of voltage droop on the output of an electrostatic accelerator free electron laser

International Nuclear Information System (INIS)

Wright, C.C.; Al-Shamma'a, A.I.; Lucas, J.; Stuart, R.A.

2000-01-01

Electrostatic accelerator FEL oscillators when operated with energy recovery offer the prospect of long pulse, single-mode operation with very narrow linewidth at high-power levels. However, special care with wiggler construction, electron beam steering, and collector design is necessary to reduce the fraction of the electron beam lost before depressed collection to a sufficiently small value to stop the output hopping from one longitudinal mode of the cavity to another due to the droop of the terminal accelerating voltage. We are investigating what minimum recovery fraction is required both experimentally and theoretically. We have constructed a pulsed microwave FEM oscillator having an accelerating voltage of 65 kV supplied by a source, which is a capacitor, charged by a low-current, high-voltage supply. By changing the capacitor value, it is easily possible to achieve a range of voltage droop rates. Furthermore, because the gain bandwidth of the FEM is small, only 1 or 2 longitudinal modes are capable of being amplified at any voltage which eases the problem of analysing mode hopping behaviour. A simple model of mode switching is outlined

Operation Manual of the high voltage generator of the Pelletron electron accelerator; Manual de operacion del generador de alto voltaje del acelerador de electrones Pelletron

Energy Technology Data Exchange (ETDEWEB)

Hernandez M, V; Lopez V, H; Alba P, U

1988-04-15

The first version of a manual to operate the generator of high voltage generator of the Pelletron electron accelerator built in the ININ is presented. Since this generator has several components and/or elements, the one manual present has the purpose that the armed one or maintenance of anyone on its parts, is carried out in an orderly and efficient way. (Author)

Reliability of supply of switchgear for auxiliary low voltage in substations extra high voltage to high voltage

Directory of Open Access Journals (Sweden)

Perić Dragoslav M.

2015-01-01

Full Text Available Switchgear for auxiliary low voltage in substations (SS of extra high voltages (EHV to high voltage (HV - SS EHV/HV kV/kV is of special interest for the functioning of these important SS, as it provides a supply for system of protection and other vital functions of SS. The article addresses several characteristic examples involving MV lines with varying degrees of independence of their supply, and the possible application of direct transformation EHV/LV through special voltage transformers. Auxiliary sources such as inverters and diesel generators, which have limited power and expensive energy, are also used for the supply of switchgear for auxiliary low voltage. Corresponding reliability indices are calculated for all examples including mean expected annual engagement of diesel generators. The applicability of certain solutions of switchgear for auxiliary low voltage SS EHV/HV, taking into account their reliability, feasibility and cost-effectiveness is analyzed too. In particular, the analysis of applications of direct transformation EHV/LV for supply of switchgear for auxiliary low voltage, for both new and existing SS EHV/HV.

The Effect of Image Potential on the Current-Voltage Characteristics of a Ferritin-layer

Directory of Open Access Journals (Sweden)

Eunjung Bang

2010-11-01

Full Text Available Considering for the concept of power storage systems, such as those used to supply power to microelectronic devices, ferritins have aroused a lot of interests for applications in bioelectrochemical devices. And electron transfer rates from the proteins to electrode surface are key determinants of overall performance and efficiency of the ferritin-based devices. Here we have investigated the electron transport mechanism of ferritin layer which was immobilized on an Au electrode. The current-voltage (I-V curves are obtained by a conductive atomic force microscope (c-AFM as a function of contact area between AFM tip and the ferritin layer. In the low voltage region, I-V curves are affected by both Fowler-Nordheim tunneling and image force. On the other hand, the experimental results are consistent with a Simmons model in a high voltage region, indicating that, as the voltage increases, the image potential has a dominant effect on the electron transport mechanism. These results are attributed to the film-like character of the ferritin layer, which generates an image potential to lower the barrier height in proportion to the voltage increment.

Microstructure of steel X 20 Cr 13 in the electron microscopical picture

International Nuclear Information System (INIS)

Gesatzke, W.

1982-01-01

The tempered microstructure of the steel X 20 Cr 13 is described by an electron microscopical overall picture and additional information is gained which would not be possible with the optical microscope. The large transmission area permits one to quantitatively evaluate a microstructure component which due to its small size can only be measured with electron microscope pictures. (orig.) [de

Ultra low-K shrinkage behavior when under electron beam in a scanning electron microscope

Energy Technology Data Exchange (ETDEWEB)

Lorut, F.; Imbert, G. [ST Microelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Roggero, A. [Centre National d' Etudes Spatiales, 18 Avenue Edouard Belin, 31400 Toulouse (France)

2013-08-28

In this paper, we investigate the tendency of porous low-K dielectrics (also named Ultra Low-K, ULK) behavior to shrink when exposed to the electron beam of a scanning electron microscope. Various experimental electron beam conditions have been used for irradiating ULK thin films, and the resulting shrinkage has been measured through use of an atomic force microscope tool. We report the shrinkage to be a fast, cumulative, and dose dependent effect. Correlation of the shrinkage with incident electron beam energy loss has also been evidenced. The chemical modification of the ULK films within the interaction volume has been demonstrated, with a densification of the layer and a loss of carbon and hydrogen elements being observed.

Cooled CCDs for recording data from electron microscopes

CERN Document Server

Faruqi, A R

2000-01-01

A cooled-CCD camera based on a low-noise scientific grade device is described in this paper used for recording images in a 120 kV electron microscope. The primary use of the camera is for recording electron diffraction patterns from two-dimensionally ordered arrays of proteins at liquid-nitrogen temperatures leading to structure determination at atomic or near-atomic resolution. The traditional method for recording data in the microscope is with electron sensitive film but electronic detection methods offer the following advantages over film methods: the data is immediately available in a digital format which can be displayed on a monitor screen for visual inspection whereas a film record needs to be developed and digitised, a lengthy process taking at least several hours, prior to inspection; the dynamic range of CCD detectors is about two orders of magnitude greater with better linearity. The accuracy of measurements is also higher for CCDs, particularly for weak signals due to inherent fog levels in film. ...

Electrical treeing behaviors in silicone rubber under an impulse voltage considering high temperature

Science.gov (United States)

Yunxiao, ZHANG; Yuanxiang, ZHOU; Ling, ZHANG; Zhen, LIN; Jie, LIU; Zhongliu, ZHOU

2018-05-01

In this paper, work was conducted to reveal electrical tree behaviors (initiation and propagation) of silicone rubber (SIR) under an impulse voltage with high temperature. Impulse frequencies ranging from 10 Hz to 1 kHz were applied and the temperature was controlled between 30 °C and 90 °C. Experimental results show that tree initiation voltage decreases with increasing pulse frequency, and the descending amplitude is different in different frequency bands. As the pulse frequency increases, more frequent partial discharges occur in the channel, increasing the tree growth rate and the final shape intensity. As for temperature, the initiation voltage decreases and the tree shape becomes denser as the temperature gets higher. Based on differential scanning calorimetry results, we believe that partial segment relaxation of SIR at high temperature leads to a decrease in the initiation voltage. However, the tree growth rate decreases with increasing temperature. Carbonization deposition in the channel under high temperature was observed under microscope and proven by Raman analysis. Different tree growth models considering tree channel characteristics are proposed. It is believed that increasing the conductivity in the tree channel restrains the partial discharge, holding back the tree growth at high temperature.

Transmission electron-microscopic studies of structural changes in polycrystalline graphite after high temperature irradiation

International Nuclear Information System (INIS)

Platonov, P.A.; Gurovich, B.A.; Shtrombakh, Ya.I.; Karpukhin, V.I.

1985-01-01

Transmission electron-microscopic investigation of polycrystalline graphite before and after irradiation is carried out. The direct use of graphite samples after ion thinning, as an inquiry subject is the basic peculiarity of the work. Main structural components of MPG-6 graphite before and after irradiation are revealed, the structural mechanism of the reactor graphite destruction under irradiation is demonstrated. The mean values of L αm and L cm crystallite dimensions are determined. Radiation defects, occuring in some crystallites after irradiation are revealed by the dark-field electron microscopy method

The effect of voltage droop on the output of an electrostatic accelerator free electron laser

CERN Document Server

Wright, C C; Lucas, J; Stuart, R A

2000-01-01

Electrostatic accelerator FEL oscillators when operated with energy recovery offer the prospect of long pulse, single-mode operation with very narrow linewidth at high-power levels. However, special care with wiggler construction, electron beam steering, and collector design is necessary to reduce the fraction of the electron beam lost before depressed collection to a sufficiently small value to stop the output hopping from one longitudinal mode of the cavity to another due to the droop of the terminal accelerating voltage. We are investigating what minimum recovery fraction is required both experimentally and theoretically. We have constructed a pulsed microwave FEM oscillator having an accelerating voltage of 65 kV supplied by a source, which is a capacitor, charged by a low-current, high-voltage supply. By changing the capacitor value, it is easily possible to achieve a range of voltage droop rates. Furthermore, because the gain bandwidth of the FEM is small, only 1 or 2 longitudinal modes are capable of b...

Scanning electron microscope - some aspects of the instrument and its applications

International Nuclear Information System (INIS)

Thatte, M.R.

1976-01-01

Development of the science of microscopy leading to three different types of microscopes - the optical, the conventional transmission electron microscope (CTEM) and the scanning electron microscope(SEM) has been discussed. Special advantages of the SEM in the solution of problems in industrial laboratories are mentioned. A brief reference to the latest instruments announced by Siemens AG shows the modern trends in the technique. A close similarity in image building between SEM and television is indicated. Operational anatomy of the SEM is reviewed. (author)

Spectral Interferometry with Electron Microscopes

Science.gov (United States)

Talebi, Nahid

2016-01-01

Interference patterns are not only a defining characteristic of waves, but also have several applications; characterization of coherent processes and holography. Spatial holography with electron waves, has paved the way towards space-resolved characterization of magnetic domains and electrostatic potentials with angstrom spatial resolution. Another impetus in electron microscopy has been introduced by ultrafast electron microscopy which uses pulses of sub-picosecond durations for probing a laser induced excitation of the sample. However, attosecond temporal resolution has not yet been reported, merely due to the statistical distribution of arrival times of electrons at the sample, with respect to the laser time reference. This is however, the very time resolution which will be needed for performing time-frequency analysis. These difficulties are addressed here by proposing a new methodology to improve the synchronization between electron and optical excitations through introducing an efficient electron-driven photon source. We use focused transition radiation of the electron as a pump for the sample. Due to the nature of transition radiation, the process is coherent. This technique allows us to perform spectral interferometry with electron microscopes, with applications in retrieving the phase of electron-induced polarizations and reconstructing dynamics of the induced vector potential. PMID:27649932

Dislocation Climb Sources Activated by 1 MeV Electron Irradiation of Copper-Nickel Alloys

DEFF Research Database (Denmark)

Barlow, P.; Leffers, Torben

1977-01-01

Climb sources emitting dislocation loops are observed in Cu-Ni alloys during irradiation with 1 MeV electrons in a high voltage electron microscope. High source densities are found in alloys containing 5, 10 and 20% Ni, but sources are also observed in alloys containing 1 and 2% Ni. The range of ...

Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires; Aufbau einer Vierspitzen-Rastertunnelmikroskop/Rasterelektronenmikroskop-Kombination und Leitfaehigkeitsmessungen an Silizid Nanodraehten

Energy Technology Data Exchange (ETDEWEB)

Zubkov, Evgeniy

2013-09-01

In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

Simultaneous specimen and stage cleaning device for analytical electron microscope

Science.gov (United States)

Zaluzec, Nestor J.

1996-01-01

An improved method and apparatus are provided for cleaning both a specimen stage, a specimen and an interior of an analytical electron microscope (AEM). The apparatus for cleaning a specimen stage and specimen comprising a plasma chamber for containing a gas plasma and an air lock coupled to the plasma chamber for permitting passage of the specimen stage and specimen into the plasma chamber and maintaining an airtight chamber. The specimen stage and specimen are subjected to a reactive plasma gas that is either DC or RF excited. The apparatus can be mounted on the analytical electron microscope (AEM) for cleaning the interior of the microscope.

Experiments in high voltage electron microscopy. Progress report, October 31, 1975--August 1976

International Nuclear Information System (INIS)

Mitchell, T.E.; Das, G.; Barnard, R.; Ro, D.

1976-08-01

High voltage electron microscopy (HVEM) is being used to study the effects of irradiation on a variety of materials. The vacancies and interstitials produced by displacement can agglomerate to form dislocation loops and voids, annihilate at sinks, or enhance various diffusion processes such as precipitation and recrystallization. Threshold displacement energies, E/sub d/, have been determined for a number of fcc, bcc, and hcp metals. Directions for minimum E/sub d/ have been correlated with the crystal structure and the magnitude of E/sub d/ has been related to the sublimation energy. The effects of electron irradiation on precipitation in Al--Cu, Al--Si and Ni--Al alloys have been investigated. Precipitation respectively of theta', Si and γ' is enhanced and growth rates are being related quantitatively to theories of radiation-enhanced diffusion. Results on radiation damage in oxides (quartz, alumina, and magnesia) have also been obtained. Displacement damage gives rise to dislocation loop nucleation and growth in all cases, including multi-layer loops in Al 2 O 3 . In SiO 2 , ionization damage also occurs, which destroys the crystallinity. Threshold displacement and temperature effects have also been investigated

Electric field stimulation setup for photoemission electron microscopes.

Science.gov (United States)

Buzzi, M; Vaz, C A F; Raabe, J; Nolting, F

2015-08-01

Manipulating magnetisation by the application of an electric field in magnetoelectric multiferroics represents a timely issue due to the potential applications in low power electronics and the novel physics involved. Thanks to its element sensitivity and high spatial resolution, X-ray photoemission electron microscopy is a uniquely suited technique for the investigation of magnetoelectric coupling in multiferroic materials. In this work, we present a setup that allows for the application of in situ electric and magnetic fields while the sample is analysed in the microscope. As an example of the performances of the setup, we present measurements on Ni/Pb(Mg(0.66)Nb(0.33))O3-PbTiO3 and La(0.7)Sr(0.3)MnO3/PMN-PT artificial multiferroic nanostructures.

Highly charged ion based time-of-flight emission microscope

International Nuclear Information System (INIS)

Hamza, Alex V.; Barnes, Alan V.; Magee, Ed; Newman, Mike; Schenkel, Thomas; McDonald, Joseph W.; Schneider, Dieter H.

2000-01-01

An emission microscope using highly charged ions as the excitation source has been designed, constructed, and operated. A novel ''acorn'' objective lens has been used to simultaneously image electron and secondary ion emission. A resistive anode-position sensitive detector is used to determine the x-y position and time of arrival of the secondary events at the microscope image plane. Contrast in the image can be based on the intensity of the electron emission and/or the presence of particular secondary ions. Spatial resolution of better than 1 μm and mass resolution m/Δm of better than 400 were demonstrated. Background rejection from uncorrelated events of greater than an order of magnitude is also achieved. (c) 2000 American Institute of Physics

Nanosecond time-resolved investigations using the in situ of dynamic transmission electron microscope (DTEM)

International Nuclear Information System (INIS)

LaGrange, Thomas; Campbell, Geoffrey H.; Reed, B.W.; Taheri, Mitra; Pesavento, J. Bradley; Kim, Judy S.; Browning, Nigel D.

2008-01-01

Most biological processes, chemical reactions and materials dynamics occur at rates much faster than can be captured with standard video rate acquisition methods in transmission electron microscopes (TEM). Thus, there is a need to increase the temporal resolution in order to capture and understand salient features of these rapid materials processes. This paper details the development of a high-time resolution dynamic transmission electron microscope (DTEM) that captures dynamics in materials with nanosecond time resolution. The current DTEM performance, having a spatial resolution <10 nm for single-shot imaging using 15 ns electron pulses, will be discussed in the context of experimental investigations in solid state reactions of NiAl reactive multilayer films, the study of martensitic transformations in nanocrystalline Ti and the catalytic growth of Si nanowires. In addition, this paper will address the technical issues involved with high current, electron pulse operation and the near-term improvements to the electron optics, which will greatly improve the signal and spatial resolutions, and to the laser system, which will allow tailored specimen and photocathode drive conditions

Nanosecond time-resolved investigations using the in situ of dynamic transmission electron microscope (DTEM)

Energy Technology Data Exchange (ETDEWEB)

LaGrange, Thomas [Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550 (United States)], E-mail: lagrange@llnl.gov; Campbell, Geoffrey H.; Reed, B.W.; Taheri, Mitra; Pesavento, J. Bradley [Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550 (United States); Kim, Judy S.; Browning, Nigel D. [Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550 (United States); Department of Chemical Engineering and Materials Science, University of California, One Shields Avenue, Davis, CA 95616 (United States)

2008-10-15

Most biological processes, chemical reactions and materials dynamics occur at rates much faster than can be captured with standard video rate acquisition methods in transmission electron microscopes (TEM). Thus, there is a need to increase the temporal resolution in order to capture and understand salient features of these rapid materials processes. This paper details the development of a high-time resolution dynamic transmission electron microscope (DTEM) that captures dynamics in materials with nanosecond time resolution. The current DTEM performance, having a spatial resolution <10 nm for single-shot imaging using 15 ns electron pulses, will be discussed in the context of experimental investigations in solid state reactions of NiAl reactive multilayer films, the study of martensitic transformations in nanocrystalline Ti and the catalytic growth of Si nanowires. In addition, this paper will address the technical issues involved with high current, electron pulse operation and the near-term improvements to the electron optics, which will greatly improve the signal and spatial resolutions, and to the laser system, which will allow tailored specimen and photocathode drive conditions.

Scanning tunnel microscope with large vision field compatible with a scanning electron microscope

International Nuclear Information System (INIS)

Volodin, A.P.; Stepanyan, G.A.; Khajkin, M.S.; Ehdel'man, V.S.

1989-01-01

A scanning tunnel microscope (STM) with the 20μm vision field and 1nm resolution, designed to be compatible with a scanning electron microscope (SEM), is described. The sample scanning area is chosen within the 3x10mm limits with a 0.1-1μm step. The STM needle is moved automatically toward the sample surface from the maximum distance of 10mm until the tunneling current appears. Bimorphous elements of the KP-1 piezocorrector are used in the STM design. The device is installed on a table of SEM object holders

Low voltage 80 KV to 125 KV electron processors

International Nuclear Information System (INIS)

Lauppi, U.V.

1999-01-01

The classic electron beam technology made use of accelerating energies in the voltage range of 300 to 800 kV. The first EB processors - built for the curing of coatings - operated at 300 kV. The products to be treated were thicker than a simple layer of coating with thicknesses up to 100g and more. It was only in the beginning of the 1970's that industrial EB processors with accelerating voltages below 300 kV appeared on the market. Our company developed the first commercial electron accelerator without a beam scanner. The new EB machine featured a linear cathode, emitting a shower or 'curtain' of electrons over the full width of the product. These units were much smaller than anv previous EB processors and dedicated to the curing of coatings and other thin layers. ESI's first EB units operated with accelerating voltages between 150 and 200 kV. In 1993 ESI announced the introduction of a new generation of Electrocure. EB processors operating at 120 kV, and in 1998, at the RadTech North America '98 Conference in Chicago, the introduction of an 80 kV electron beam processor under the designation Microbeam LV

Helium leak testing of scanning electron microscope

International Nuclear Information System (INIS)

Ahmad, Anis; Tripathi, S.K.; Mukherjee, D.

2015-01-01

Scanning Electron Microscope (SEM) is a specialized electron-optical device which is used for imaging of miniscule features on topography of material specimens. Conventional SEMs used finely focused high energy (about 30 KeV) electron beam probes of diameter of about 10nm for imaging of solid conducting specimens. Vacuum of the order of 10"-"5 Torr is prerequisite for conventional Tungsten filament type SEMs. One such SEM was received from one of our laboratory in BARC with a major leak owing to persisting poor vacuum condition despite continuous pumping for several hours. He-Leak Detection of the SEM was carried out at AFD using vacuum spray Technique and various potential leak joints numbering more than fifty were helium leak tested. The major leak was detected in the TMP damper bellow. The part was later replaced and the repeat helium leak testing of the system was carried out using vacuum spray technique. The vacuum in SEM is achieved is better than 10"-"5 torr and system is now working satisfactorily. (author)

Specimen holder for an electron microscope and device and method for mounting a specimen in an electron microscope

NARCIS (Netherlands)

Zandbergen, H.W.; Latenstein van Voorst, A.; Westra, C.; Hoveling, G.H.

1996-01-01

A specimen holder for an electron microscope, comprising a bar-shaped body provided adjacent one end with means for receiving a specimen, with means being present for screening the specimen from the environment at least temporarily in airtight and moisture-proof manner in a first position, which

A high-voltage equipment (high voltage supply, high voltage pulse generators, resonant charging inductance, synchro-instruments for gyrotron frequency measurements) for plasma applications

International Nuclear Information System (INIS)

Spassov, Velin

1996-01-01

This document reports my activities as visitor-professor at the Gyrotron Project - INPE Plasma Laboratory. The main objective of my activities was designing, construction and testing a suitable high-voltage pulse generator for plasma applications, and efforts were concentrated on the following points: Design of high-voltage resonant power supply with tunable output (0 - 50 kV) for line-type high voltage pulse generator; design of line-type pulse generator (4 microseconds pulse duration, 0 - 25 kV tunable voltage) for non linear loads such as a gyrotron and P III reactor; design of resonant charging inductance for resonant line-type pulse generator, and design of high resolution synchro instrument for gyrotron frequency measurement. (author)

High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

Science.gov (United States)

Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

2010-01-01

A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

Cluster secondary ion mass spectrometry microscope mode mass spectrometry imaging.

Science.gov (United States)

Kiss, András; Smith, Donald F; Jungmann, Julia H; Heeren, Ron M A

2013-12-30

Microscope mode imaging for secondary ion mass spectrometry is a technique with the promise of simultaneous high spatial resolution and high-speed imaging of biomolecules from complex surfaces. Technological developments such as new position-sensitive detectors, in combination with polyatomic primary ion sources, are required to exploit the full potential of microscope mode mass spectrometry imaging, i.e. to efficiently push the limits of ultra-high spatial resolution, sample throughput and sensitivity. In this work, a C60 primary source was combined with a commercial mass microscope for microscope mode secondary ion mass spectrometry imaging. The detector setup is a pixelated detector from the Medipix/Timepix family with high-voltage post-acceleration capabilities. The system's mass spectral and imaging performance is tested with various benchmark samples and thin tissue sections. The high secondary ion yield (with respect to 'traditional' monatomic primary ion sources) of the C60 primary ion source and the increased sensitivity of the high voltage detector setup improve microscope mode secondary ion mass spectrometry imaging. The analysis time and the signal-to-noise ratio are improved compared with other microscope mode imaging systems, all at high spatial resolution. We have demonstrated the unique capabilities of a C60 ion microscope with a Timepix detector for high spatial resolution microscope mode secondary ion mass spectrometry imaging. Copyright © 2013 John Wiley & Sons, Ltd.

Design for an aberration corrected scanning electron microscope using miniature electron mirrors.

Science.gov (United States)

Dohi, Hideto; Kruit, Pieter

2018-06-01

Resolution of scanning electron microscopes (SEMs) is determined by aberrations of the objective lens. It is well known that both spherical and chromatic aberrations can be compensated by placing a 90-degree bending magnet and an electron mirror in the beam path before the objective lens. Nevertheless, this approach has not led to wide use of these aberration correctors, partly because aberrations of the bending magnet can be a serious problem. A mirror corrector with two mirrors placed perpendicularly to the optic axis of an SEM and facing each other is proposed. As a result, only small-angle magnetic deflection is necessary to guide the electron beam around the top mirror to the bottom mirror and around the bottom mirror to the objective lens. The deflection angle, in the order of 50 mrad, is sufficiently small to avoid deflection aberrations. In addition, lateral dispersion at the sample plane can be avoided by making the deflection fields symmetric. Such a corrector system is only possible if the incoming beam can pass the top mirror at a distance in the order of millimeters, without being disturbed by the electric fields of electrodes of the mirror. It is proposed that condition can be satisfied with micro-scale electron optical elements fabricated by using MEMS technology. In the proposed corrector system, the micro-mirrors have to provide the exact negative spherical and chromatic aberrations for correcting the aberration of the objective lens. This exact tuning is accomplished by variable magnification between the micro-mirrors and the objective lens using an additional transfer lens. Extensive optical calculations are reported. Aberrations of the micro-mirrors were analyzed by numerical calculation. Dispersion and aberrations of the deflectors were calculated by using an analytical field model. Combination aberrations caused by the off-axis position of dispersive rays in the mirrors and objective lens were also analyzed. It is concluded that the proposed

High-voltage, high-current, solid-state closing switch

Science.gov (United States)

Focia, Ronald Jeffrey

2017-08-22

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

Solid State High Voltage Supply for EB and X-Ray Generators

Czech Academy of Sciences Publication Activity Database

Zobač, Martin; Vlček, Ivan

2009-01-01

Roč. 44, 5-6 (2009), s. 73-75 ISSN 0861-4717 R&D Projects: GA AV ČR KAN300100702 Institutional research plan: CEZ:AV0Z20650511 Keywords : high voltage supply * electron beam generator * x-ray generator Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Compact design of a transmission electron microscope-scanning tunneling microscope holder with three-dimensional coarse motion

International Nuclear Information System (INIS)

Svensson, K.; Jompol, Y.; Olin, H.; Olsson, E.

2003-01-01

A scanning tunneling microscope (STM) with a compact, three-dimensional, inertial slider design is presented. Inertial sliding of the STM tip, in three dimensions, enables coarse motion and scanning using only one piezoelectric tube. Using the same electronics both for scanning and inertial sliding, step lengths of less than 5% of the piezo range were achieved. The compact design, less than 1 cm3 in volume, ensures a low mechanical noise level and enables us to fit the STM into the sample holder of a transmission electron microscope (TEM), while maintaining atomic scale resolution in both STM and TEM imaging

High-speed multiframe dynamic transmission electron microscope image acquisition system with arbitrary timing

Science.gov (United States)

Reed, Bryan W.; DeHope, William J.; Huete, Glenn; LaGrange, Thomas B.; Shuttlesworth, Richard M.

2015-10-20

An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system ("laser"). The laser produces a train of temporally-shaped laser pulses of a predefined pulse duration and waveform, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has two pairs of plates arranged perpendicular to one another. A control system controls the laser and a plurality of switching components synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to be provided with an independently set duration and independently set inter-pulse spacings.

Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

Science.gov (United States)

Cai, Yuanji; Guan, Yonggang; Liu, Weidong

2017-06-01

Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

Porous and mesh alumina formed by anodization of high purity aluminum films at low anodizing voltage

International Nuclear Information System (INIS)

Abd-Elnaiem, Alaa M.; Mebed, A.M.; El-Said, Waleed Ahmed; Abdel-Rahim, M.A.

2014-01-01

Electrochemical oxidation of high-purity aluminum (Al) films under low anodizing voltages (1–10) V has been conducted to obtain anodic aluminum oxide (AAO) with ultra-small pore size and inter-pore distance. Different structures of AAO have been obtained e.g. nanoporous and mesh structures. Highly regular pore arrays with small pore size and inter-pore distance have been formed in oxalic or sulfuric acids at different temperatures (22–50 °C). It is found that the pore diameter, inter-pore distance and the barrier layer thickness are independent of the anodizing parameters, which is very different from the rules of general AAO fabrication. The brand formation mechanism has been revealed by the scanning electron microscope study. Regular nanopores are formed under 10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultra-small nanopores. Anodization that is performed at voltages less than 5 V leads to mesh structured alumina. In addition, we have introduced a simple one-pot synthesis method to develop thin walls of oxide containing lithium (Li) ions that could be used for battery application based on anodization of Al films in a supersaturated mixture of lithium phosphate and phosphoric acid as matrix for Li-composite electrolyte. - Highlights: • We develop anodic aluminum oxide (AAO) with small pore size and inter-pore distance. • Applying low anodizing voltages onto aluminum film leads to form mesh structures. • The value of anodizing voltage (1–10 V) has no effect on pore size or inter-pore distance. • Applying anodizing voltage less than 5 V leads to mesh structured AAO. • AAO can be used as a matrix for Li-composite electrolytes

Porous and mesh alumina formed by anodization of high purity aluminum films at low anodizing voltage

Energy Technology Data Exchange (ETDEWEB)

Abd-Elnaiem, Alaa M., E-mail: alaa.abd-elnaiem@science.au.edu.eg [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Mebed, A.M. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Department of Physics, Faculty of Science, Al-Jouf University, Sakaka 2014 (Saudi Arabia); El-Said, Waleed Ahmed [Department of Chemistry, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Abdel-Rahim, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

2014-11-03

Electrochemical oxidation of high-purity aluminum (Al) films under low anodizing voltages (1–10) V has been conducted to obtain anodic aluminum oxide (AAO) with ultra-small pore size and inter-pore distance. Different structures of AAO have been obtained e.g. nanoporous and mesh structures. Highly regular pore arrays with small pore size and inter-pore distance have been formed in oxalic or sulfuric acids at different temperatures (22–50 °C). It is found that the pore diameter, inter-pore distance and the barrier layer thickness are independent of the anodizing parameters, which is very different from the rules of general AAO fabrication. The brand formation mechanism has been revealed by the scanning electron microscope study. Regular nanopores are formed under 10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultra-small nanopores. Anodization that is performed at voltages less than 5 V leads to mesh structured alumina. In addition, we have introduced a simple one-pot synthesis method to develop thin walls of oxide containing lithium (Li) ions that could be used for battery application based on anodization of Al films in a supersaturated mixture of lithium phosphate and phosphoric acid as matrix for Li-composite electrolyte. - Highlights: • We develop anodic aluminum oxide (AAO) with small pore size and inter-pore distance. • Applying low anodizing voltages onto aluminum film leads to form mesh structures. • The value of anodizing voltage (1–10 V) has no effect on pore size or inter-pore distance. • Applying anodizing voltage less than 5 V leads to mesh structured AAO. • AAO can be used as a matrix for Li-composite electrolytes.

Constant potential high-voltage generator

International Nuclear Information System (INIS)

Resnick, T.A.; Dupuis, W.A.; Palermo, T.

1980-01-01

An X-ray tube voltage generator with automatic stabilization circuitry is disclosed. The generator includes a source of pulsating direct current voltage such as from a rectified 3 phase transformer. This pulsating voltage is supplied to the cathode and anode of an X-ray tube and forms an accelerating potential for electrons within that tube. The accelerating potential is stabilized with a feedback signal which is provided by a feedback network. The network includes an error signal generator which compares an instantaneous accelerating potential with a preferred reference accelerating potential and generates an error function. This error function is transmitted to a control tube grid which in turn causes the voltage difference between X-ray tube cathode and anode to stabilize and thereby reduce the error function. In this way stabilized accelerating potentials are realized and uniform X-ray energy distributions produced. (Auth.)

Microscopic Electron Variations Measured Simultaneously By The Cluster Spacecraft

Science.gov (United States)

Buckley, A. M.; Carozzi, T. D.; Gough, M. P.; Beloff, N.

Data is used from the Particle Correlator experiments running on each of the four Cluster spacecraft so as to determine common microscopic behaviour in the elec- tron population observed over the macroscopic Cluster separations. The Cluster par- ticle correlator experiments operate by forming on board Auto Correlation Functions (ACFs) generated from short time series of electron counts obtained, as a function of electron energy, from the PEACE HEEA sensor. The information on the microscopic variation of the electron flux covers the frequency range DC up to 41 kHz (encom- passing typical electron plasma frequencies and electron gyro frequencies and their harmonics), the electron energy range is that covered by the PEACE HEEA sensor (within the range 1 eV to 26 keV). Results are presented of coherent electron struc- tures observed simultaneously by the four spacecraft in the differing plasma interac- tion regions and boundaries encountered by Cluster. As an aid to understanding the plasma interactions, use is made of numerical simulations which model both the un- derlying statistical properties of the electrons and also the manner in which particle correlator experiments operate.

Field electron emission spectrometer combined with field ion/electron microscope as a field emission laboratory

International Nuclear Information System (INIS)

Shkuratov, S.I.; Ivanov, S.N.; Shilimanov, S.N.

1996-01-01

The facility, combining the field ion microscope, field electron emission microscope and field electron emission spectrometer, is described. Combination of three methodologies makes it possible to carry out the complete cycle of emission studies. Atom-plane and clean surface of the studied samples is prepared by means of field evaporation of the material atom layers without any thermal and radiation impact. This enables the study of atom and electron structure of clean surface of the wide range materials, the study whereof through the field emission methods was previously rather difficult. The temperature of the samples under study changes from 75 up to 2500 K. The energy resolution of the electron analyzer equals 30 MeV. 19 refs., 10 figs

Disinfection of sludge and waste-water by irradiation with electrons of low accelerating voltage

International Nuclear Information System (INIS)

Holl, P.; Schneider, H.

1975-01-01

From the point of view of hygiene, sewage sludge and water accumulating in ever increasing quantities, some of which is used in agriculture, represent a potential threat to the health of man and beast, as well as to the environment. It is known that these chains of infection can be broken up by ionizing radiation. The use of natural ionizing radiation or electron radiation with high accelerating voltage has not been accepted in practice because the radiation cannot be cut off and the investment cost for electron accelerators with an accelerating voltage of more than 1 MV is very high. These disadvantages may be overcome by using an electron accelerator with low accelerating voltage. Complex experiments have shown that it is not necessary to adapt the thickness of sewage sludge or water layer to the range of electrons. The layer to be irradiated may be much thicker if the substrate is revolved during irradiation. The advantages of this method are low accelerating voltage for the electrons and hence less costly radiation shielding, complete absorption of the radiated energy by the substrate, and low investment and operating cost. The sterilizing effect of the process can be explained by the secondary reactions that take place in the water, in addition to the primary reactions, when irradiating with high specific ionizing density. It is known from experiments carried out by Muenzner that water irradiated with electrons of high specific ionization density, when added to bacterial cultures, will destroy them. This is explained by the Weiss radical theory of water, with reaction products such as H 2 , O 2 and H 2 O 2 . The success of this process is shown by experiments with Escherichia coli, tap water to which Salmonella senftenberg were added, and by the content of Enterobacteriaceae in various sludges as a function of the irradiation period, as well as by the rate at which various invariable species of strongilide larvae, eggs of Ascaris suum, Fasciola hepatica and

New trend in electron holography

Science.gov (United States)

Tanigaki, Toshiaki; Harada, Ken; Murakami, Yasukazu; Niitsu, Kodai; Akashi, Tetsuya; Takahashi, Yoshio; Sugawara, Akira; Shindo, Daisuke

2016-06-01

Electron holography using a coherent electron wave is a promising technique for high-resolution visualization of electromagnetic fields in and around objects. The capability of electron holography has been enhanced by the development of new technologies and has thus become an even more powerful tool for exploring scientific frontiers. This review introduces these technologies including split-illumination electron holography and vector-field electron tomography. Split-illumination electron holography, which uses separated coherent waves, overcomes the limits imposed by the lateral coherence requirement for electron waves in electron holography. Areas that are difficult to observe using conventional electron holography are now observable. Exemplified applications include observing a singular magnetic domain wall in electrical steel sheets, local magnetizations at anti-phase boundaries, and electrostatic potentials in metal-oxide-semiconductor field-effect transistors. Vector-field electron tomography can be used to visualize magnetic vectors in three dimensions. Two components of the vectors are reconstructed using dual-axis tomography, and the remaining one is calculated using div B   =  0. A high-voltage electron microscope can be used to achieve precise magnetic reconstruction. For example, magnetic vortices have been visualized using a 1 MV holography electron microscope.

New trend in electron holography

International Nuclear Information System (INIS)

Tanigaki, Toshiaki; Akashi, Tetsuya; Takahashi, Yoshio; Sugawara, Akira; Harada, Ken; Niitsu, Kodai; Shindo, Daisuke; Murakami, Yasukazu

2016-01-01

Electron holography using a coherent electron wave is a promising technique for high-resolution visualization of electromagnetic fields in and around objects. The capability of electron holography has been enhanced by the development of new technologies and has thus become an even more powerful tool for exploring scientific frontiers. This review introduces these technologies including split-illumination electron holography and vector-field electron tomography. Split-illumination electron holography, which uses separated coherent waves, overcomes the limits imposed by the lateral coherence requirement for electron waves in electron holography. Areas that are difficult to observe using conventional electron holography are now observable. Exemplified applications include observing a singular magnetic domain wall in electrical steel sheets, local magnetizations at anti-phase boundaries, and electrostatic potentials in metal-oxide-semiconductor field-effect transistors. Vector-field electron tomography can be used to visualize magnetic vectors in three dimensions. Two components of the vectors are reconstructed using dual-axis tomography, and the remaining one is calculated using div B   =  0. A high-voltage electron microscope can be used to achieve precise magnetic reconstruction. For example, magnetic vortices have been visualized using a 1 MV holography electron microscope. (paper)

Electron irradiation effects and recovery of defect clusters in TiC through high voltage electron microscope

International Nuclear Information System (INIS)

Iseki, Michio; Kirihara, Tomoo; Ushijima, Susumu; Ohashi, Hideki.

1984-01-01

Titanium carbide(TiCsub(0.8)) prepared by plasma-jet melting was irradiated to an electron dose less than 6x10 26 e/m 2 from room temperature to 800 0 C. The number density and average size of the defect clusters formed at irradiation temperatures below 400 0 C were less than those formed above 600 0 C. Since TiCsub(0.8) has an order structure of carbon below around 600 0 C, the ordered phase is more resistant to radiation than the disordered one in higher temperatures. The clusters decrease in number density and develop to dislocation loops during post irradiation annealing above 1,000 0 C. The burgers vector of the loops was determined as a/2 . There were two temperature region for the recovery of the defect clusters. It is conceivable that the first one appeared in the temperature region around 600 0 C caused by migration of carbon vacancies, and the second one appeared above 1,000 0 C by migration of titanium vacancies. (author)

Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

International Nuclear Information System (INIS)

Sinha, Nidhi; Ray, Geeta; Godara, Sanjay; Gupta, Manoj K.; Kumar, Binay

2014-01-01

Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm 2 ) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications

Oxidation mechanism of nickel particles studied in an environmental transmission electron microscope

DEFF Research Database (Denmark)

Jeangros, Q.; Hansen, Thomas Willum; Wagner, Jakob Birkedal

2014-01-01

The oxidation of nickel particles was studied in situ in an environmental transmission electron microscope in 3.2 mbar of O2 between ambient temperature and 600°C. Several different transmission electron microscopy imaging techniques, electron diffraction and electron energy-loss spectroscopy were...... diffusion of Ni2+ along NiO grain boundaries, self-diffusion of Ni2+ ions and vacancies, growth of NiO grains and nucleation of voids at Ni/NiO interfaces. We also observed the formation of transverse cracks in a growing NiO film in situ in the electron microscope....

CMOS-compatible high-voltage integrated circuits

Energy Technology Data Exchange (ETDEWEB)

Parpia, Z

1988-01-01

Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

Electron microscope autoradiography of isolated DNA molecules

International Nuclear Information System (INIS)

Delain, Etienne; Bouteille, Michel

1980-01-01

Autoradiographs of 3 H-thymidine-labelled DNA molecules were observed with an electron microscope. After ten months of exposure significant labelling was obtained with tritiated T7 DNA molecules which had a specific activity of 630,000 cpm/μg. Although isolated DNA molecules were not stretched out to such an extent that they could be rigorously compared to straight 'hot lines', the resolution was estimated and found to be similar to that obtained by autoradiography on thin plastic sections. The H.D. value was of the order of 1600A. From the known specific activity of the macromolecules, it was possible to compare the expected number of disintegrations from the samples to the number of grains obtained on the autoradiograms. This enabled us to calculate 1/ The absolute autoradiographic efficiency and 2/ The per cent ratio of thymidine residues labelled with tritium. These results throw some light on the resolution and sensitivity of electron microscope autoradiography of shadowed isolated macromolecules as compared to thin plastic sections

Scanning electron microscopic evaluation of root canal surfaces ...

African Journals Online (AJOL)

Scanning electron microscopic evaluation of root canal surfaces prepared with three rotary endodontic systems: Lightspeed, ProTaper and EndoWave. ... fracture with LightSpeed (LS), ProTaper (PT) and EndoWave (Ew) rotary instruments.

Best use of high-voltage, high-powered electron beams: a new approach to contract irradiation services

International Nuclear Information System (INIS)

Watanabe, T.

2000-01-01

Japan's first high-voltage, high-powered electron beam processing center is scheduled to come on-line during the first half of 1999. The center explores both challenges and opportunities of how best to use the 200 kW 10 MeV unit and its 5 MeV X-ray line. In particular, Nuclear Fuel Industries, Ltd. (NFI) has expanded the traditional model of a contract irradiation facility to include a much broader scope of services such as door-to-door transport, storage, and direct distribution to its customer's end-users. The new business scope not only finds new value-added components in a competitive marketplace, but serves to provide a viable mechanism to take advantage of the processing logistics of high throughput irradiation units. As such, the center features a high-capacity warehousing system, monitored by a newly developed PCMS (plant control management system), which has been comprehensively integrated into the irradiation unit's handling system, and will require only minimal human resources for its high rate of material handling. The identification and development of initial markets for this first unit will be discussed, concluding with how this same operational philosophy can help break open new irradiation segments in medical devices, consumer goods, animal feed, and food markets and NFI's other efforts in these same areas. (author)

Temporary over voltages in the high voltage networks

International Nuclear Information System (INIS)

Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

2001-01-01

The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

Hartmann characterization of the PEEM-3 aberration-corrected X-ray photoemission electron microscope.

Science.gov (United States)

Scholl, A; Marcus, M A; Doran, A; Nasiatka, J R; Young, A T; MacDowell, A A; Streubel, R; Kent, N; Feng, J; Wan, W; Padmore, H A

2018-05-01

Aberration correction by an electron mirror dramatically improves the spatial resolution and transmission of photoemission electron microscopes. We will review the performance of the recently installed aberration corrector of the X-ray Photoemission Electron Microscope PEEM-3 and show a large improvement in the efficiency of the electron optics. Hartmann testing is introduced as a quantitative method to measure the geometrical aberrations of a cathode lens electron microscope. We find that aberration correction leads to an order of magnitude reduction of the spherical aberrations, suggesting that a spatial resolution of below 100 nm is possible at 100% transmission of the optics when using x-rays. We demonstrate this improved performance by imaging test patterns employing element and magnetic contrast. Published by Elsevier B.V.

High resolution transmission electron microscopic study of nanoporous carbon consisting of curved single graphite sheets

International Nuclear Information System (INIS)

Bourgeois, L.N.; Bursill, L.A.

1997-01-01

A high resolution transmission electron microscopic study of a nanoporous carbon rich in curved graphite monolayers is presented. Observations of very thin regions. including the effect of tilting the specimen with respect to the electron beam, are reported. The initiation of single sheet material on an oriented graphite substrate is also observed. When combined with image simulations and independent measurements of the density (1.37g cm -3 ) and sp 3 /sp 2 +sp 2 bonding fraction (0.16), these observations suggest that this material is a two phase mixture containing a relatively low density aggregation of essentially capped single shells like squat nanotubes and polyhedra, plus a relatively dense 'amorphous' carbon structure which may be described using a random-Schwarzite model. Some negatively-curved sheets were also identified in the low density phase. Finally, some discussion is offered regarding the growth mechanisms responsible for this nanoporous carbon and its relationship with the structures of amorphous carbons across a broad range of densities, porosities and sp 3 /sp 2 +sp 3 bonding fractions

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

Science.gov (United States)

Li, Kexin; Rakheja, Shaloo

2018-05-01

We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

X-ray analysis of a single aerosol particle with combination of scanning electron microscope and synchrotron radiation X-ray microscope

International Nuclear Information System (INIS)

Toyoda, Masatoshi; Kaibuchi, Kazuki; Nagasono, Mitsuru; Terada, Yasuko; Tanabe, Teruo; Hayakawa, Shinjiro; Kawai, Jun

2004-01-01

We developed a microscope by a combination of synchrotron radiation X-ray fluorescence (SR-XRF) microscope and scanning electron microscope (SEM) with an energy dispersive X-ray spectrometer (EDX). SR-XRF is appropriate to detect trace and micro amount of elements and sensitive to heavy elements in an analyte but it cannot observe the real time image. SEM-EDX can observe the secondary electron image of a single particle in real time and is appropriate to detect lighter elements. This combination microscope can ensure the identification of the XRF spectrum to the SEM image without transferring the sample. For aerosol analysis, it is important to analyze each particle. The present method makes feasible to analyze not only the average elemental composition as the total particles but also elemental composition of each particle, which is dependent on the particle shape and size. The microscope was applied to an individual aerosol particle study. The X-ray spectra were different among the particles, but also different between SR-XRF and SEM-EDX for the same particle, due to the difference in fluorescence yields between X-ray excitation and electron excitation

Imaging of soft and hard materials using a Boersch phase plate in a transmission electron microscope

Energy Technology Data Exchange (ETDEWEB)

Alloyeau, D., E-mail: alloyeau.damien@gmail.com [National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, One Cyclotron Road, MS/72, Berkeley, CA 94720 (United States); Hsieh, W.K. [National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, One Cyclotron Road, MS/72, Berkeley, CA 94720 (United States); Anderson, E.H.; Hilken, L. [Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley CA 94720 (United States); Benner, G. [Carl Zeiss NTS GmbH, Oberkochen 73447 (Germany); Meng, X. [Electrical Engineering and Computer Sciences, UC Berkeley, Berkeley, CA 94720-1770 (United States); Chen, F.R. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan (China); Kisielowski, C. [National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, One Cyclotron Road, MS/72, Berkeley, CA 94720 (United States)

2010-04-15

Using two levels of electron beam lithography, vapor phase deposition techniques, and FIB etching, we have fabricated an electrostatic Boersch phase plate for contrast enhancement of weak phase objects in a transmission electron microscope. The phase plate has suitable dimensions for the imaging of small biological samples without compromising the high-resolution capabilities of the microscope. A micro-structured electrode allows for phase tuning of the unscattered electron beam, which enables the recording of contrast enhanced in-focus images and in-line holograms. We have demonstrated experimentally that our phase plate improves the contrast of carbon nanotubes while maintaining high-resolution imaging performance, which is demonstrated for the case of an AlGaAs heterostructure. The development opens a new way to study interfaces between soft and hard materials.

French contributions to electron microscopic radioautography

International Nuclear Information System (INIS)

Droz, B.

1994-01-01

The radio autographic contributions carried out by electron microscopists took a part to improve the methodology and to extend applications to major biological problems. As underlined by CP Leblonc radioautography has clarified the importance of renewing systems; one may truly say that radioautography has introduced the time dimension in histology. The sites of biosynthesis of different substances have been located on the sub cellar scale, and it is now possible to analyse the molecular migrations within cells. The development of in situ hybridization and of receptors binding sites at the ultrastructural level has enlarged the application field of electron microscope radioautography. 64 refs., 2 figs

Role of scanning electron microscope )SEM) in metal failure analysis

International Nuclear Information System (INIS)

Shaiful Rizam Shamsudin; Hafizal Yazid; Mohd Harun; Siti Selina Abd Hamid; Nadira Kamarudin; Zaiton Selamat; Mohd Shariff Sattar; Muhamad Jalil

2005-01-01

Scanning electron microscope (SEM) is a scientific instrument that uses a beam of highly energetic electrons to examine the surface and phase distribution of specimens on a micro scale through the live imaging of secondary electrons (SE) and back-scattered electrons (BSE) images. One of the main activities of SEM Laboratory at MINT is for failure analysis on metal part and components. The capability of SEM is excellent for determining the root cause of metal failures such as ductility or brittleness, stress corrosion, fatigue and other types of failures. Most of our customers that request for failure analysis are from local petrochemical plants, manufacturers of automotive components, pipeline maintenance personnel and engineers who involved in the development of metal parts and component. This paper intends to discuss some of the technical concepts in failure analysis associated with SEM. (Author)

Transient voltage sharing in series-coupled high voltage switches

Directory of Open Access Journals (Sweden)

Editorial Office

1992-07-01

Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

Transmission electron microscopy physics of image formation and microanalysis

CERN Document Server

Reimer, Ludwig

1984-01-01

The aim of this book is to outline the physics of image formation, electron­ specimen interactions and image interpretation in transmission electron mic­ roscopy. The book evolved from lectures delivered at the University of Munster and is a revised version of the first part of my earlier book Elek­ tronenmikroskopische Untersuchungs- und Priiparationsmethoden, omitting the part which describes specimen-preparation methods. In the introductory chapter, the different types of electron microscope are compared, the various electron-specimen interactions and their applications are summarized and the most important aspects of high-resolution, analytical and high-voltage electron microscopy are discussed. The optics of electron lenses is discussed in Chapter 2 in order to bring out electron-lens properties that are important for an understanding of the function of an electron microscope. In Chapter 3, the wave optics of elec­ trons and the phase shifts by electrostatic and magnetic fields are introduced; Fresne...

Electron holography study of magnetization behavior in the writer pole of a perpendicular magnetic recording head by a 1 MV transmission electron microscope.

Science.gov (United States)

Hirata, Kei; Ishida, Yoichi; Akashi, Tetsuya; Shindo, Daisuke; Tonomura, Akira

2012-01-01

The magnetic domain structure of the writer poles of perpendicular magnetic recording heads was studied using electron holography. Although the domain structure of a 100-nm-thick writer pole could be observed with a 300 kV transmission electron microscope, that of the 250-nm-thick writer pole could not be analyzed due to the limited transmission capability of the instrument. On the other hand, the detailed domain structure of the 250-nm-thick writer pole was successfully analyzed by a 1 MV electron microscope using its high transmission capability. The thickness and material dependency of the domain structure of a writer pole were discussed.

Adventitious X-radiation from high voltage equipment

International Nuclear Information System (INIS)

Martin, E.B.M.

1979-01-01

The monograph is concerned with hazards of unwanted x-rays from sources such as television receivers, high voltage equipment, radar transmitters, switchgear and electron beam apparatus for welding, evaporation, analysis and microscopy. Chapters are included on units, production of x radiation, biological effects, protection standards, radiation monitoring, shielding and control of access, medical and dosimetric supervision and types of equipment. A bibliography of 92 references and other cited literature is included. (U.K.)

Scanning Electron Microscope Analysis System

Data.gov (United States)

Federal Laboratory Consortium — This facility provides the capability to examine surfaces microscopically with high resolution (5 nanometers), perform micro chemical analyses of these surfaces, and...

Amorphous-like interfacial layer between a high-Tc superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

International Nuclear Information System (INIS)

Kim, Bongjun; Kim, Hyuntak; Nagai, Takuro; Matsui, Yoshio; Horiuchi, Shigeo; Jeong, Daeyeong; Deinhofer, Christian; Gritzner, Gerhard; Kim, Youngmin; Kim, Younjoong

2006-01-01

The thin amorphous-like layer, formed at the interface between a high-T c superconducting (Tl 0.5 , Pb 0.5 )(Sr 0.8 , Ba 0.2 )Ca 2 Cu 3 O y (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO 2 + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

Advanced Electron Holography Applied to Electromagnetic Field Study in Materials Science.

Science.gov (United States)

Shindo, Daisuke; Tanigaki, Toshiaki; Park, Hyun Soon

2017-07-01

Advances and applications of electron holography to the study of electromagnetic fields in various functional materials are presented. In particular, the development of split-illumination electron holography, which introduces a biprism in the illumination system of a holography electron microscope, enables highly accurate observations of electromagnetic fields and the expansion of the observable area. First, the charge distributions on insulating materials were studied by using split-illumination electron holography and including a mask in the illumination system. Second, the three-dimensional spin configurations of skyrmion lattices in a helimagnet were visualized by using a high-voltage holography electron microscope. Third, the pinning of the magnetic flux lines in a high-temperature superconductor YBa 2 Cu 3 O 7-y was analyzed by combining electron holography and scanning ion microscopy. Finally, the dynamic accumulation and collective motions of electrons around insulating biomaterial surfaces were observed by utilizing the amplitude reconstruction processes of electron holography. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoscale Energy-Filtered Scanning Confocal Electron Microscopy Using a Double-Aberration-Corrected Transmission Electron Microscope

International Nuclear Information System (INIS)

Wang Peng; Behan, Gavin; Kirkland, Angus I.; Nellist, Peter D.; Takeguchi, Masaki; Hashimoto, Ayako; Mitsuishi, Kazutaka; Shimojo, Masayuki

2010-01-01

We demonstrate that a transmission electron microscope fitted with two spherical-aberration correctors can be operated as an energy-filtered scanning confocal electron microscope. A method for establishing this mode is described and initial results showing 3D chemical mapping with nanoscale sensitivity to height and thickness changes in a carbon film are presented. Importantly, uncorrected chromatic aberration does not limit the depth resolution of this technique and moreover performs an energy-filtering role, which is explained in terms of a combined depth and energy-loss response function.

Development of a secondary electron energy analyzer for a transmission electron microscope.

Science.gov (United States)

Magara, Hideyuki; Tomita, Takeshi; Kondo, Yukihito; Sato, Takafumi; Akase, Zentaro; Shindo, Daisuke

2018-04-01

A secondary electron (SE) energy analyzer was developed for a transmission electron microscope. The analyzer comprises a microchannel plate (MCP) for detecting electrons, a coil for collecting SEs emitted from the specimen, a tube for reducing the number of backscattered electrons incident on the MCP, and a retarding mesh for selecting the energy of SEs incident on the MCP. The detection of the SEs associated with charging phenomena around a charged specimen was attempted by performing electron holography and SE spectroscopy using the energy analyzer. The results suggest that it is possible to obtain the energy spectra of SEs using the analyzer and the charging states of a specimen by electron holography simultaneously.

Micro-four-point probes in a UHV scanning electron microscope for in-situ surface-conductivity measurements

DEFF Research Database (Denmark)

Shiraki, I.; Nagao, T.; Hasegawa, S.

2000-01-01

For in-situ measurements of surface conductivity in ultrahigh vacuum (UHV), we have installed micro-four-point probes (probe spacings down to 4 mum) in a UHV scanning electron microscope (SEM) combined with scanning reflection-high-energy electron diffraction (RHEED). With the aid of piezoactuators...

Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

Science.gov (United States)

Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

2017-06-01

Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coma-free alignment of high resolution electron microscopes with the aid of optical diffractograms

International Nuclear Information System (INIS)

Zemlin, F.; Weiss, K.; Schiske, P.; Kunath, W.; Herrmann, K.-H.

1978-01-01

Alignment by means of current commutating and defocusing of the objective does not yield the desired rotational symmetry of the imaging pencils. This was found while aligning a transmission electron microscope with a single field condenser objective. A series of optical diffractograms of micrographs taken under the same tilted illumination yet under various azimuths have been arranged in a tableau, wherein strong asymmetry is exhibited. Quantitative evaluation yields the most important asymmetric aberration to be the axial coma, which becomes critical when a resolution better than 5 A 0 is obtained. The tableau also allows an assessment of the three-fold astigmatism. A procedure has been developed which aligns the microscope onto the coma-free and dispersion-free pencil axis and does not rely on current communication. The procedure demands equal appearance of astigmatic carbon film images produced under the same tilt yet diametrical azimuth. (Auth.)

Experimental observations of electron-backscatter effects from high-atomic-number anodes in large-aspect-ratio, electron-beam diodes

Energy Technology Data Exchange (ETDEWEB)

Cooperstein, G; Mosher, D; Stephanakis, S J; Weber, B V; Young, F C [Naval Research Laboratory, Washington, DC (United States); Swanekamp, S B [JAYCOR, Vienna, VA (United States)

1997-12-31

Backscattered electrons from anodes with high-atomic-number substrates cause early-time anode-plasma formation from the surface layer leading to faster, more intense electron beam pinching, and lower diode impedance. A simple derivation of Child-Langmuir current from a thin hollow cathode shows the same dependence on the diode aspect ratio as critical current. Using this fact, it is shown that the diode voltage and current follow relativistic Child-Langmuir theory until the anode plasma is formed, and then follows critical current after the beam pinches. With thin hollow cathodes, electron beam pinching can be suppressed at low voltages (< 800 kV) even for high currents and high-atomic-number anodes. Electron beam pinching can also be suppressed at high voltages for low-atomic-number anodes as long as the electron current densities remain below the plasma turn-on threshold. (author). 8 figs., 2 refs.

The reactions of loaded carbon nanotubes, studied by novel electron microscope techniques

International Nuclear Information System (INIS)

Rawcliffe, A.

1999-01-01

A novel electron microscope technique, controlled environment transmission electron microscopy (CETEM), has been used to investigate the reaction of materials loaded within the internal cavities of carbon nanotubes. CETEM allows the introduction of up to 20 mbar of gas around an electron microscope sample, while maintaining a high resolution imaging capability. The microscope is stable, flexible and reliable under these conditions and high resolution images of encapsulated transmission metal oxide reduction have been recorded at 460 deg. C. Recently discovered carbon nanotubes have in theory many applications, many of which will require controlled reliable loading of the internal cavity. However, at present, there is little experimental evidence to confirm theoretical descriptions of the fundamental mechanisms which govern both the extent of loading and the state in which it is found. Similarly, reaction within the cavity and the effect of encapsulation on the nano-scale particle distribution must also be understood, and CETEM proves to be an ideal technique for the study of these processes. Nanotubes have been loaded from aqueous solution with (NH 4 ) 2 IrCI 6 and with molten MoO 3 or K 2 WO 4 /WO 3 . Bulk samples of the first salt are known to decompose spontaneously in air at 200 deg. C, and the bulk oxides are partially reduced at temperature under hydrogen to give potentially useful conducting phases. Comparing the reaction of these materials it is thus possible to: investigate the effect of loading on their reaction; compare the reaction of these materials in- and out-side the tube cavity; and assess the result of violent loading processes on the tubes themselves. Fortuitously, a spontaneous decomposition, a solid-gas reduction and a phase rearrangement were all recorded, allowing mechanistic implications of encapsulation to be considered for each of these reactions. Perhaps surprisingly, the results can be largely interpreted using the reported bulk

Atomistic observations and analyses of lattice defects in transmission electron microscopes

CERN Document Server

Abe, H

2003-01-01

The transmission electron microscope (TEM) -accelerators was developed. TEM-Accelerator made possible to observe in situ experiments of ion irradiation and implantation. The main results are the experimental proof of new lattice defects by irradiation, the formation process and synthesized conditions of carbon onion by ion implantation, the microstructure and phase transformation conditions of graphite by ion irradiated phase transformation, the irradiation damage formation process by simultaneous irradiation of electron and ion and behavior of fullerene whisker under irradiation. The microstructural evolution of defect clusters in copper irradiated with 240-keV Cu sup + ions and a high resolution electron micrograph of carbon onions synthesized by ion implantation are explained as the examples of recent researches. (S.Y.)

A distributed multi-GPU system for high speed electron microscopic tomographic reconstruction

Energy Technology Data Exchange (ETDEWEB)

Zheng, Shawn Q.; Branlund, Eric; Kesthelyi, Bettina; Braunfeld, Michael B.; Cheng, Yifan; Sedat, John W. [The Howard Hughes Medical Institute and the W.M. Keck Advanced Microscopy Laboratory, Department of Biochemistry and Biophysics, University of California, San Francisco, 600, 16th Street, Room S412D, CA 94158-2517 (United States); Agard, David A., E-mail: agard@msg.ucsf.edu [The Howard Hughes Medical Institute and the W.M. Keck Advanced Microscopy Laboratory, Department of Biochemistry and Biophysics, University of California, San Francisco, 600, 16th Street, Room S412D, CA 94158-2517 (United States)

2011-07-15

Full resolution electron microscopic tomographic (EMT) reconstruction of large-scale tilt series requires significant computing power. The desire to perform multiple cycles of iterative reconstruction and realignment dramatically increases the pressing need to improve reconstruction performance. This has motivated us to develop a distributed multi-GPU (graphics processing unit) system to provide the required computing power for rapid constrained, iterative reconstructions of very large three-dimensional (3D) volumes. The participating GPUs reconstruct segments of the volume in parallel, and subsequently, the segments are assembled to form the complete 3D volume. Owing to its power and versatility, the CUDA (NVIDIA, USA) platform was selected for GPU implementation of the EMT reconstruction. For a system containing 10 GPUs provided by 5 GTX295 cards, 10 cycles of SIRT reconstruction for a tomogram of 4096{sup 2}x512 voxels from an input tilt series containing 122 projection images of 4096{sup 2} pixels (single precision float) takes a total of 1845 s of which 1032 s are for computation with the remainder being the system overhead. The same system takes only 39 s total to reconstruct 1024{sup 2}x256 voxels from 122 1024{sup 2} pixel projections. While the system overhead is non-trivial, performance analysis indicates that adding extra GPUs to the system would lead to steadily enhanced overall performance. Therefore, this system can be easily expanded to generate superior computing power for very large tomographic reconstructions and especially to empower iterative cycles of reconstruction and realignment. -- Highlights: {yields} A distributed multi-GPU system has been developed for electron microscopic tomography (EMT). {yields} This system allows for rapid constrained, iterative reconstruction of very large volumes. {yields} This system can be easily expanded to generate superior computing power for large-scale iterative EMT realignment.

A distributed multi-GPU system for high speed electron microscopic tomographic reconstruction

International Nuclear Information System (INIS)

Zheng, Shawn Q.; Branlund, Eric; Kesthelyi, Bettina; Braunfeld, Michael B.; Cheng, Yifan; Sedat, John W.; Agard, David A.

2011-01-01

Full resolution electron microscopic tomographic (EMT) reconstruction of large-scale tilt series requires significant computing power. The desire to perform multiple cycles of iterative reconstruction and realignment dramatically increases the pressing need to improve reconstruction performance. This has motivated us to develop a distributed multi-GPU (graphics processing unit) system to provide the required computing power for rapid constrained, iterative reconstructions of very large three-dimensional (3D) volumes. The participating GPUs reconstruct segments of the volume in parallel, and subsequently, the segments are assembled to form the complete 3D volume. Owing to its power and versatility, the CUDA (NVIDIA, USA) platform was selected for GPU implementation of the EMT reconstruction. For a system containing 10 GPUs provided by 5 GTX295 cards, 10 cycles of SIRT reconstruction for a tomogram of 4096 2 x512 voxels from an input tilt series containing 122 projection images of 4096 2 pixels (single precision float) takes a total of 1845 s of which 1032 s are for computation with the remainder being the system overhead. The same system takes only 39 s total to reconstruct 1024 2 x256 voxels from 122 1024 2 pixel projections. While the system overhead is non-trivial, performance analysis indicates that adding extra GPUs to the system would lead to steadily enhanced overall performance. Therefore, this system can be easily expanded to generate superior computing power for very large tomographic reconstructions and especially to empower iterative cycles of reconstruction and realignment. -- Highlights: → A distributed multi-GPU system has been developed for electron microscopic tomography (EMT). → This system allows for rapid constrained, iterative reconstruction of very large volumes. → This system can be easily expanded to generate superior computing power for large-scale iterative EMT realignment.

Spin polarisation with electron Bessel beams

Energy Technology Data Exchange (ETDEWEB)

Schattschneider, P., E-mail: schattschneider@ifp.tuwien.ac.at [Institut für Festkörperphysik, Technische Universität Wien, A-1040 Wien (Austria); USTEM, Technische Universität Wien, A-1040 Wien (Austria); Grillo, V. [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); CNR-IMEM, Parco delle Scienze 37a, I-43100 Parma (Italy); Aubry, D. [Centrale Supelec, MSSMast CNRS 8579, F-92295 Châtenay-Malabry (France)

2017-05-15

The theoretical possibility to use an electron microscope as a spin polarizer is studied. It turns out that a Bessel beam passing a standard magnetic objective lens is intrinsically spin polarized when post-selected on-axis. In the limit of infinitely small detectors, the spin polarisation tends to 100 %. Increasing the detector size, the polarisation decreases rapidly, dropping below 10{sup −4} for standard settings of medium voltage microscopes. For extremely low voltages, the Figure of Merit increases by two orders of magnitude, approaching that of existing Mott detectors. Our findings may lead to new desings of spin filters, an attractive option in view of its inherent combination with the electron microscope, especially at low voltage. - Highlights: • TEM round magnetic lenses can act as spin polarizers when a Bessel beam is sent through. • This is found on theoretical grounds and demonstrated numerically for a few cases. • The effect is small, but can reach a Figure of Merit similar to existing Mott detectors. • This opens the possibility to construct nanometer-sized spin filters or detectors.

High-speed multi-frame dynamic transmission electron microscope image acquisition system with arbitrary timing

Science.gov (United States)

Reed, Bryan W.; DeHope, William J.; Huete, Glenn; LaGrange, Thomas B.; Shuttlesworth, Richard M.

2016-02-23

An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system ("laser"). The laser produces a train of temporally-shaped laser pulses each being of a programmable pulse duration, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has a plurality of plates. A control system having a digital sequencer controls the laser and a plurality of switching components, synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to enable programmable pulse durations and programmable inter-pulse spacings.

Acute radiation nephritis. Light and electron microscopic observations

International Nuclear Information System (INIS)

Kapur, S.; Chandra, R.; Antonovych, T.

1977-01-01

Light and electron microscopy were used to observe acute radiation nephritis. By light microscopy the changes were of fibrinoid necrosis of the arteries and arterioles with segmental necrosis of the glomerular tufts. By electron microscopy the endocapillary cells reacted by hypertrophy and hyperplasia with increase in cytoplasmic organelles. In addition, disruption of endothelial and epithelial cells from the basement membranes were seen. It is concluded that the electron microscopic changes were unique and may be helpful in differentiating the necrotizing glomerulitis seen in other conditions, especially malignant hypertension

Characterizing deformed ultrafine-grained and nanocrystalline materials using transmission Kikuchi diffraction in a scanning electron microscope

International Nuclear Information System (INIS)

Trimby, Patrick W.; Cao, Yang; Chen, Zibin; Han, Shuang; Hemker, Kevin J.; Lian, Jianshe; Liao, Xiaozhou; Rottmann, Paul; Samudrala, Saritha; Sun, Jingli; Wang, Jing Tao; Wheeler, John; Cairney, Julie M.

2014-01-01

Graphical abstract: -- Abstract: The recent development of transmission Kikuchi diffraction (TKD) in a scanning electron microscope enables fast, automated orientation mapping of electron transparent samples using standard electron backscatter diffraction (EBSD) hardware. TKD in a scanning electron microscope has significantly better spatial resolution than conventional EBSD, enabling routine characterization of nanocrystalline materials and allowing effective measurement of samples that have undergone severe plastic deformation. Combining TKD with energy dispersive X-ray spectroscopy (EDS) provides complementary chemical information, while a standard forescatter detector system below the EBSD detector can be used to generate dark field and oriented dark field images. Here we illustrate the application of this exciting new approach to a range of deformed, ultrafine grained and nanocrystalline samples, including duplex stainless steel, nanocrystalline copper and highly deformed titanium and nickel–cobalt. The results show that TKD combined with EDS is a highly effective and widely accessible tool for measuring key microstructural parameters at resolutions that are inaccessible using conventional EBSD

High current polarized electron source

Science.gov (United States)

Suleiman, R.; Adderley, P.; Grames, J.; Hansknecht, J.; Poelker, M.; Stutzman, M.

2018-05-01

Jefferson Lab operates two DC high voltage GaAs photoguns with compact inverted insulators. One photogun provides the polarized electron beam at the Continuous Electron Beam Accelerator Facility (CEBAF) up to 200 µA. The other gun is used for high average current photocathode lifetime studies at a dedicated test facility up to 4 mA of polarized beam and 10 mA of un-polarized beam. GaAs-based photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed facilities that must operate in excess of tens of mA of polarized average current. This contribution describes techniques to maintain good vacuum while delivering high beam currents, and techniques that minimize damage due to ion bombardment, the dominant mechanism that reduces photocathode yield. Advantages of higher DC voltage include reduced space-charge emittance growth and the potential for better photocathode lifetime. Highlights of R&D to improve the performance of polarized electron sources and prolong the lifetime of strained-superlattice GaAs are presented.

A digital controlled negative high voltage power source for LINAC of HLS

International Nuclear Information System (INIS)

Gao Hui; Chen Jun; Hong Jun; Wang Weibing

2005-01-01

This paper introduces the working principle of a 10-80 kV negative high voltage power source for the electronic gun of the 200 MeV LINAC of NSRL, especially how to realize the switch power, voltage/current sampling, feedback control and microcontroller module. The firmware design for the SOC microcontroller of ADuC8xx and the application software design for PC are also presented. (authors)

Novel high-voltage power lateral MOSFET with adaptive buried electrodes

International Nuclear Information System (INIS)

Zhang Wen-Tong; Wu Li-Juan; Qiao Ming; Luo Xiao-Rong; Zhang Bo; Li Zhao-Ji

2012-01-01

A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and −587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

LED-Based High-Voltage Lines Warning System

Directory of Open Access Journals (Sweden)

Eldar MUSA

2013-04-01

Full Text Available LED-based system, running with the current of high-voltage lines and converting the current flowing through the line into the light by using a toroid transformer, has been developed. The transformer’s primary winding is constituted by the high voltage power line. Toroidal core consists of two equal parts and the secondary windings are evenly placed on these two parts. The system is mounted on the high-voltage lines as a clamp. The secondary winding ends are connected in series by the connector on the clamp. LEDs are supplied by the voltage at the ends of secondary. Current flowing through highvoltage transmission lines is converted to voltage by the toroidal transformer and the light emitting LEDs are supplied with this voltage. The theory of the conversion of the current flowing through the line into the light is given. The system, running with the current of the line and converting the current into the light, has been developed. System has many application areas such as warning high voltage lines (warning winches to not hinder the high-voltage lines when working under the lines, warning planes to not touch the high-voltage lines, remote measurement of high-voltage line currents, and local illumination of the line area

Spherical aberration correction in a scanning transmission electron microscope using a sculpted thin film.

Science.gov (United States)

Shiloh, Roy; Remez, Roei; Lu, Peng-Han; Jin, Lei; Lereah, Yossi; Tavabi, Amir H; Dunin-Borkowski, Rafal E; Arie, Ady

2018-06-01

Nearly eighty years ago, Scherzer showed that rotationally symmetric, charge-free, static electron lenses are limited by an unavoidable, positive spherical aberration. Following a long struggle, a major breakthrough in the spatial resolution of electron microscopes was reached two decades ago by abandoning the first of these conditions, with the successful development of multipole aberration correctors. Here, we use a refractive silicon nitride thin film to tackle the second of Scherzer's constraints and demonstrate an alternative method for correcting spherical aberration in a scanning transmission electron microscope. We reveal features in Si and Cu samples that cannot be resolved in an uncorrected microscope. Our thin film corrector can be implemented as an immediate low cost upgrade to existing electron microscopes without re-engineering of the electron column or complicated operation protocols and can be extended to the correction of additional aberrations. Copyright © 2018 The Authors. Published by Elsevier B.V. All rights reserved.

Atomic and molecular physics, physicochemical properties of biologically important structure, and high-voltage research

International Nuclear Information System (INIS)

Christophorou, L.G.; Allen, J.D.; Anderson, V.E.

1976-01-01

Research in atomic and molecular physics is reported. Studies included: experimental evidence for the existence of a Ramsauer-Townsend minimum in liquid methane and liquid argon; discovery of a Ramsauer-Townsend minimum in gaseous ethane and propane; motion of thermal electrons in n-alkane vapors; electron mobilities in high pressure gases; electron capture and drift in liquid media; electron attachment to molecules in dense gases; attachment of slow electrons to hexafluorobenzene; fragmentation of atmospheric halocarbons under electron impact; negative ion resonances and threshold electron excitation spectra of organic molecules; theoretical studies of negative-ion resonance states of organic molecules; kinetics of electron capture by sulfur hexafluoride in solution; interactions of slow electrons with benzene and benzene derivatives; Stokes and anti-Stokes fluorescence of 1 : 12-benzoperylene in solution; photoionization of molecules in liquid media; construction of high-voltage breakdown apparatus for gaseous insulation studies; measurements of the breakdown strengths of gaseous insulators and their relation to basic electron-collision processes; accuracy of the breakdown voltage measurements; and assembling basic data on electronegative gases of significance to breakdown

76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

Science.gov (United States)

2011-11-15

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. AD12-5-000] Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High Voltage Grids on Thursday, December 1, 2011...

Structural Fingerprinting of Nanocrystals in the Transmission Electron Microscope

Science.gov (United States)

Rouvimov, Sergei; Plachinda, Pavel; Moeck, Peter

2010-03-01

Three novel strategies for the structurally identification of nanocrystals in a transmission electron microscope are presented. Either a single high-resolution transmission electron microscopy image [1] or a single precession electron diffractogram (PED) [2] may be employed. PEDs from fine-grained crystal powders may also be utilized. Automation of the former two strategies is in progress and shall lead to statistically significant results on ensembles of nanocrystals. Open-access databases such as the Crystallography Open Database which provides more than 81,500 crystal structure data sets [3] or its mainly inorganic and educational subsets [4] may be utilized. [1] http://www.scientificjournals.org/journals 2007/j/of/dissertation.htm [2] P. Moeck and S. Rouvimov, in: {Drugs and the Pharmaceutical Sciences}, Vol. 191, 2009, 270-313 [3] http://cod.ibt.lt, http://www.crystallography.net, http://cod.ensicaen.fr, http://nanocrystallography.org, http://nanocrystallography.net, http://journals.iucr.org/j/issues/2009/04/00/kk5039/kk5039.pdf [4] http://nanocrystallography.research.pdx.edu/CIF-searchable

Remote control scanning electron microscope with Web operation

International Nuclear Information System (INIS)

Yamada, A.; Hirahara, O.; Date, M.; Lozbin, V.; Tsuchida, T.; Sugano, N.

2002-01-01

Full text: Recently, SEM (Scanning Electron Microscope) and the other observation instruments are coming to use a LAN (Local Area Network) to save the image in the database. We developed a remote control system in which SEM image and Control interface is indicated on the WEB Browser. In this system, SEM can be controlled by an external (client) PC installed in a general WEB Browser (Internet Explorer). Accordingly, operation interface can be indicated on the WEB browser. A JSM-6700F is connected to a LAN, and so a client PC can control the microscope. The JSM-6700F has two lines to the LAN for image transfer and communication with the SEM control. In order to transfer the image, the image size squeezes from 1280 x 1024-pixels (SEM image size) to 640x480-pixels for quick transfer. The image signal (640 x 480-pixels) is connected to the video server only, and then the image transfers to the client PC via LAN. The SEM control communicates with client PC for external command. On the other hand, the SEM control interface and the image are indicated on WEB Browser (Internet explorer). The SEM control interface is composed of the SEM image area and the SEM control part. The SEM image indicates the 640x480-pixels live image. This live image is being used as a high resolution live image transfer in the image transfer technology which a network is used for at present. If it is LAN beyond 10 base, this indication of an image can be transferred fully. When it is connected in the small line of the capacity, the refresh speed of the image becomes slow because of image data doesn't finish transferring it. In such a case, image size can be changed smaller by the LAN conditions. When a high quality image is necessary, the image of 1280 x 1024-pixels is saved on a SEM (server) side by choosing the image save button. At the same time, the file kept in SEM (server) is transferred to the client PC automatically, so that we can display a high quality image on the client PC side. The

Closed-Loop Autofocus Scheme for Scanning Electron Microscope

Directory of Open Access Journals (Sweden)

Cui Le

2015-01-01

Full Text Available In this paper, we present a full scale autofocus approach for scanning electron microscope (SEM. The optimal focus (in-focus position of the microscope is achieved by maximizing the image sharpness using a vision-based closed-loop control scheme. An iterative optimization algorithm has been designed using the sharpness score derived from image gradient information. The proposed method has been implemented and validated using a tungsten gun SEM at various experimental conditions like varying raster scan speed, magnification at real-time. We demonstrate that the proposed autofocus technique is accurate, robust and fast.

Dual ion beam irradiation system for in situ observation with electron microscope

International Nuclear Information System (INIS)

Tsukamoto, Tetuo; Hojou, Kiiti; Furuno, Sigemi; Otsu, Hitosi; Izui, Kazuhiko.

1993-01-01

We have developed a new in situ observation system for dynamic processes under dual ion beam irradiation. The system consists of a modified 400 keV analytical electron microscope (JEOL, JEM-4000FX) and two 40 kV ion beam accelerators. This system allows evaluation of microscopic changes of structure and chemical bonding state of materials in the dynamic processes under two kinds of ion beam irradiations, that is required for the simulation test of the first wall of nuclear fusion reactors onto which He + , H + , and H 2 + ions are irradiated simultaneously. These two ion accelerators were equipped symmetrically both sides of the electron microscope and individually controlled. Each ion beam extracted from a duo-plasmatron ion gun is bent downward by an angle of 30deg with a mass-separating magnet, and introduced into specimen chamber of the electron microscope. Inside the specimen chamber the beam is deflected again by an angle of 30deg with an electrostatic prism so as to be incident on the specimen surface. Finally, two ion beams from both side are incident on the specimen surface at an angle of 60deg. The maximum ion current density of helium is more than 250μA/cm 2 at the specimen at an ion energy of 17 keV. Images of the electron microscope during dual ion beam irradiation are observed through a TV camera and recorded with a VTR. (author)

High Voltage EEE Parts for EMA/EHA Applications on Manned Launch Vehicles

Science.gov (United States)

Griffin, Trent; Young, David

2011-01-01

The objective of this paper is an assessment of high voltage electronic components required for high horsepower electric thrust vector control (TVC) systems for human spaceflight launch critical application. The scope consists of creating of a database of available Grade 1 electrical, electronic and electromechanical (EEE) parts suited to this application, a qualification path for potential non-Grade 1 EEE parts that could be used in these designs, and pathfinder testing to validate aspects of the proposed qualification plan. Advances in the state of the art in high power electric power systems enable high horsepower electric actuators, such as the electromechnical actuator (EMA) and the electro-hydrostatic actuator (EHA), to be used in launch vehicle TVC systems, dramaticly reducing weight, complexity and operating costs. Designs typically use high voltage insulated gate bipolar transistors (HV-IGBT). However, no Grade 1 HV-IGBT exists and it is unlikely that market factors alone will produce such high quality parts. Furthermore, the perception of risk, the lack of qualification methodoloy, the absence of manned space flight heritage and other barriers impede the adoption of commercial grade parts onto the critical path. The method of approach is to identify high voltage electronic component types and key parameters for parts currently used in high horsepower EMA/EHA applications, to search for higher quality substitutes and custom manufacturers, to create a database for these parts, and then to explore ways to qualify these parts for use in human spaceflight launch critical application, including grossly derating and possibly treating hybrid parts as modules. This effort is ongoing, but results thus far include identification of over 60 HV-IGBT from four manufacturers, including some with a high reliability process flow. Voltage ranges for HV-IGBT have been identified, as has screening tests used to characterize HV-IGBT. BSI BS ISO 21350 Space systems Off

Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope

NARCIS (Netherlands)

Bocquel, J.; Kortan, V.R.; Sahin, C.; Campion, R.P.; Gallagher, B.L.; Flatte, M.E.; Koenraad, P.M.

2013-01-01

We demonstrate that a scanning tunneling microscope tip can be used to manipulate the tightly bound core (d-electron) state of single Fe ions embedded in GaAs. Increasing tip-sample voltage removes one d electron from the core of a single Fe, changing the dopant from the (Fe2+)(-) ionized acceptor

Study of Scanning Tunneling Microscope control electronics

International Nuclear Information System (INIS)

Oliva, A.J.; Pancarobo, M.; Denisenko, N.; Aguilar, M.; Rejon, V.; Pena, J.L.

1994-01-01

A theoretical study of Scanning Tunneling Microscope control electronics is made. The knowledge of its behaviour allows us to determine accurately the region where the unstable operation could effect the measurements, and also to set the optimal working parameters. Each feedback circuitry compound is discussed as well as their mutual interaction. Different working conditions analysis and results are presented. (Author) 12 refs

Pulsed Power for a Dynamic Transmission Electron Microscope

Energy Technology Data Exchange (ETDEWEB)

dehope, w j; browning, n; campbell, g; cook, e; king, w; lagrange, t; reed, b; stuart, b; Shuttlesworth, R; Pyke, B

2009-06-25

Lawrence Livermore National Laboratory (LLNL) has converted a commercial 200kV transmission electron microscope (TEM) into an ultrafast, nanoscale diagnostic tool for material science studies. The resulting Dynamic Transmission Electron Microscope (DTEM) has provided a unique tool for the study of material phase transitions, reaction front analyses, and other studies in the fields of chemistry, materials science, and biology. The TEM's thermionic electron emission source was replaced with a fast photocathode and a laser beam path was provided for ultraviolet surface illumination. The resulting photoelectron beam gives downstream images of 2 and 20 ns exposure times at 100 and 10 nm spatial resolution. A separate laser, used as a pump pulse, is used to heat, ignite, or shock samples while the photocathode electron pulses, carefully time-synchronized with the pump, function as probe in fast transient studies. The device functions in both imaging and diffraction modes. A laser upgrade is underway to make arbitrary cathode pulse trains of variable pulse width of 10-1000 ns. Along with a fast e-beam deflection scheme, a 'movie mode' capability will be added to this unique diagnostic tool. This talk will review conventional electron microscopy and its limitations, discuss the development and capabilities of DTEM, in particularly addressing the prime and pulsed power considerations in the design and fabrication of the DTEM, and conclude with the presentation of a deflector and solid-state pulser design for Movie-Mode DTEM.

Pulsed Power for a Dynamic Transmission Electron Microscope

International Nuclear Information System (INIS)

DeHope, W.J.; Browning, N.; Campbell, G.; Cook, E.; King, W.; Lagrange, T.; Reed, B.; Stuart, B.; Shuttlesworth, R.; Pyke, B.

2009-01-01

Lawrence Livermore National Laboratory (LLNL) has converted a commercial 200kV transmission electron microscope (TEM) into an ultrafast, nanoscale diagnostic tool for material science studies. The resulting Dynamic Transmission Electron Microscope (DTEM) has provided a unique tool for the study of material phase transitions, reaction front analyses, and other studies in the fields of chemistry, materials science, and biology. The TEM's thermionic electron emission source was replaced with a fast photocathode and a laser beam path was provided for ultraviolet surface illumination. The resulting photoelectron beam gives downstream images of 2 and 20 ns exposure times at 100 and 10 nm spatial resolution. A separate laser, used as a pump pulse, is used to heat, ignite, or shock samples while the photocathode electron pulses, carefully time-synchronized with the pump, function as probe in fast transient studies. The device functions in both imaging and diffraction modes. A laser upgrade is underway to make arbitrary cathode pulse trains of variable pulse width of 10-1000 ns. Along with a fast e-beam deflection scheme, a 'movie mode' capability will be added to this unique diagnostic tool. This talk will review conventional electron microscopy and its limitations, discuss the development and capabilities of DTEM, in particularly addressing the prime and pulsed power considerations in the design and fabrication of the DTEM, and conclude with the presentation of a deflector and solid-state pulser design for Movie-Mode DTEM

On the Progress of Scanning Transmission Electron Microscopy (STEM) Imaging in a Scanning Electron Microscope.

Science.gov (United States)

Sun, Cheng; Müller, Erich; Meffert, Matthias; Gerthsen, Dagmar

2018-04-01

Transmission electron microscopy (TEM) with low-energy electrons has been recognized as an important addition to the family of electron microscopies as it may avoid knock-on damage and increase the contrast of weakly scattering objects. Scanning electron microscopes (SEMs) are well suited for low-energy electron microscopy with maximum electron energies of 30 keV, but they are mainly used for topography imaging of bulk samples. Implementation of a scanning transmission electron microscopy (STEM) detector and a charge-coupled-device camera for the acquisition of on-axis transmission electron diffraction (TED) patterns, in combination with recent resolution improvements, make SEMs highly interesting for structure analysis of some electron-transparent specimens which are traditionally investigated by TEM. A new aspect is correlative SEM, STEM, and TED imaging from the same specimen region in a SEM which leads to a wealth of information. Simultaneous image acquisition gives information on surface topography, inner structure including crystal defects and qualitative material contrast. Lattice-fringe resolution is obtained in bright-field STEM imaging. The benefits of correlative SEM/STEM/TED imaging in a SEM are exemplified by structure analyses from representative sample classes such as nanoparticulates and bulk materials.

Annular dark field electron microscope images with better than 2 A resolution at 100 kV