Multi-Port High Voltage Gain Modular Power Converter for Offshore Wind Farms

Directory of Open Access Journals (Sweden)

Sen Song

2018-06-01

Full Text Available In high voltage direct current (HVDC power transmission of offshore wind power systems, DC/DC converters are applied to transfer power from wind generators to HVDC terminals, and they play a crucial role in providing a high voltage gain, high efficiency, and high fault tolerance. This paper introduces an innovative multi-port DC/DC converter with multiple modules connected in a scalable matrix configuration, presenting an ultra-high voltage step-up ratio and low voltage/current rating of components simultaneously. Additionally, thanks to the adoption of active clamping current-fed push–pull (CFPP converters as sub-modules (SMs, soft-switching is obtained for all power switches, and the currents of series-connected CFPP converters are auto-balanced, which significantly reduce switching losses and control complexity. Furthermore, owing to the expandable matrix structure, the output voltage and power of a modular converter can be controlled by those of a single SM, or by adjusting the column and row numbers of the matrix. High control flexibility improves fault tolerance. Moreover, due to the flexible control, the proposed converter can transfer power directly from multiple ports to HVDC terminals without bus cable. In this paper, the design of the proposed converter is introduced, and its functions are illustrated by simulation results.

Delayed pull-in transitions in overdamped MEMS devices

Science.gov (United States)

Gomez, Michael; Moulton, Derek E.; Vella, Dominic

2018-01-01

We consider the dynamics of overdamped MEMS devices undergoing the pull-in instability. Numerous previous experiments and numerical simulations have shown a significant increase in the pull-in time under DC voltages close to the pull-in voltage. Here the transient dynamics slow down as the device passes through a meta-stable or bottleneck phase, but this slowing down is not well understood quantitatively. Using a lumped parallel-plate model, we perform a detailed analysis of the pull-in dynamics in this regime. We show that the bottleneck phenomenon is a type of critical slowing down arising from the pull-in transition. This allows us to show that the pull-in time obeys an inverse square-root scaling law as the transition is approached; moreover we determine an analytical expression for this pull-in time. We then compare our prediction to a wide range of pull-in time data reported in the literature, showing that the observed slowing down is well captured by our scaling law, which appears to be generic for overdamped pull-in under DC loads. This realization provides a useful design rule with which to tune dynamic response in applications, including state-of-the-art accelerometers and pressure sensors that use pull-in time as a sensing mechanism. We also propose a method to estimate the pull-in voltage based only on data of the pull-in times.

High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

Energy Technology Data Exchange (ETDEWEB)

Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2015-02-14

We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

High energy mechano-chemical milling: Convenient approach to synthesis of LiMn{sub 1.5}Ni{sub 0.5}O{sub 4} high voltage cathode for lithium ion batteries

Energy Technology Data Exchange (ETDEWEB)

Datta, Moni Kanchan, E-mail: mkd16@pitt.edu [Bioengineering, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); Center for Complex Engineered Multifunctional Materials, University of Pittsburgh, PA 15261 (United States); Ramanathan, Madhumati [Bioengineering, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); Jampani, Prashanth [Chemical and Petroleum Engineering, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); Saha, Partha [Bioengineering, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); Epur, Rigved [Mechanical Engineering and Materials Science, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); Kadakia, Karan [Chemical and Petroleum Engineering, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); Chung, Sung Jae [Mechanical Engineering and Materials Science, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); Patel, Prasad; Gattu, Bharat [Chemical and Petroleum Engineering, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); Manivannan, Ayyakkannu [US Department of Energy, National Energy Technology Laboratory, Morgantown, WV 26507 (United States); Kumta, Prashant N., E-mail: pkumta@pitt.edu [Bioengineering, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); Center for Complex Engineered Multifunctional Materials, University of Pittsburgh, PA 15261 (United States); Chemical and Petroleum Engineering, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); Mechanical Engineering and Materials Science, Swanson School of Engineering, University of Pittsburgh, PA 15261 (United States); School of Dental Medicine, University of Pittsburgh, PA 15261 (United States)

2014-12-15

Graphical abstract: Nanostructured high voltage spinel phase of LiMn{sub 1.5}Ni{sub 0.5}O{sub 4} (LMNO) of particle size ∼10–40 nm has been synthesized by a cost effective high energy mechanical milling (HEMM) approach followed by low temperature thermal treatments. High energy mechanical milling of lithium and manganese oxide precursors followed by moderate heat treatment results in the formation of single phase of LMNO, the high voltage spinel phase. The nanostructured LMNO has been studied as a high voltage cathode for lithium ion rechargeable batteries. Cyclic voltammetry as well as the differential capacity plots of nanostructured LMNO show the occurrence of two major reversible reactions occurring in the potential window of ∼2–3.6 V and ∼3.6–5.1 V with an associated specific capacity ∼105 mAh/g and ∼128 mAh/g, respectively. The nanostructured LMNO synthesized by the HEMM process followed by thermal treatments at ∼773 K, ∼873 K and ∼973 K shows a reversible capacity ∼120–110 mAh/g when cycled at a rate of ∼20 mA/g (∼C/6) in the potential window ∼3.6–5.1 V. Furthermore, the nanostructured HEMM derived LMNO shows a moderate rate capability with a capacity retention ∼87 mAh/g when cycled at ∼80 mA/g (∼C) rate. - Highlights: • Generation of LiMn{sub 1.5}Ni{sub 0.5}O{sub 4} (LMNO) spinel by a cost effective HEMM process. • HEMM derived LMNO spinel phase shows a capacity of ∼128 mAh/g. • HEMM derived spinel exhibits a capacity retention of ∼87 mAh/g at ∼1C rate. • SEM analysis shows good structural integrity of the cycled electrode. • Charge transfer resistance increase during cycling causes capacity fade. - Abstract: The high voltage spinel form of LiMn{sub 1.5}Ni{sub 0.5}O{sub 4} (LMNO) with a particle size ∼10–40 nm has been synthesized for the first time using high energy mechanical milling (HEMM) followed by low temperature thermal treatments using Li{sub 2}O, MnO{sub 2} and NiO as the starting

Pull-pull position control of dual motor wire rope transmission.

Science.gov (United States)

Guo, Quan; Jiao, Zongxia; Yan, Liang; Yu, Qian; Shang, Yaoxing

2016-08-01

Wire rope transmission is very efficient because of the small total moving object mass. The wire rope could only transmit pulling force. Therefore it has to be kept in a tightened state during transmission; in high speed applications the dynamic performance depends on the rope's stiffness, which can be adjusted by the wire rope tension. To improve the system dynamic performance output, this paper proposes a novel pull-pull method based on dual motors connected by wire ropes, for precise, high speed position control applications. The method can regulate target position and wire rope tension simultaneously. Wire ropes remain in a pre-tightening state at all times, which prevents the influence of elasticity and reduces the position tracking error in the changing direction process. Simulations and experiments were conducted; the results indicate that both position precision and superior dynamic performance can be synchronously achieved. The research is relevant to space craft precision pointing instruments.

Voltage inverter with push-pull topology to inject energy into electrical systems with modulation SPWM

Directory of Open Access Journals (Sweden)

Emerson Charles M. Silva

2013-09-01

Full Text Available This paper presents a proposal for a voltage inverter topology based on push-pull converters, switched at high frequency to inject energy into the grid from a source of DC power. A system using two reverse voltage static converters provides the power grid; energy in the form of alternating current, that can work in conjunction with the provision of utility power. Aiming at the possible use of renewable energy sources, that can be stored in the form of voltage continuous, such as wind, solar, hydroelectric and others. The functioning of topology is presented, such as the power and control circuits, as well as sizing components, theoretical and practical results achieved with the assembly of a prototype 100W of power and switching in 40khz, which after filtering provides the frequency of 60Hz, which is compatible with the Brazilian electrical system.

Transient voltage sharing in series-coupled high voltage switches

Directory of Open Access Journals (Sweden)

Editorial Office

1992-07-01

Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

A Comparison of Isometric Midthigh-Pull Strength, Vertical Jump, Sprint Speed, and Change-of-Direction Speed in Academy Netball Players.

Science.gov (United States)

Thomas, Christopher; Comfort, Paul; Jones, Paul A; Dos'Santos, Thomas

2017-08-01

To investigate the relationships between maximal isometric strength, vertical jump (VJ), sprint speed, and change-of-direction speed (CoDS) in academy netball players and determine whether players who have high performance in isometric strength testing would demonstrate superior performance in VJ, sprint speed, and CoDS measures. Twenty-six young female netball players (age 16.1 ± 1.2 y, height 173.9 ± 5.7 cm, body mass 66.0 ± 7.2 kg) from a regional netball academy performed isometric midthigh pull (IMTP), squat jumps (SJs), countermovement jumps (CMJs), 10-m sprints, and CoDS (505). IMTP measures displayed moderate to strong correlations with sprint and CoDS performance (r = -.41 to -.66). The VJs, which included SJs and CMJs, demonstrated strong correlations with 10-m sprint times (r = -.60 to -.65; P strength to enhance VJ, sprint, and CoDS performance in youth netball players, with stronger athletes demonstrating superior VJ, sprint, and CoDS performances.

Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

2014-05-15

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

Modelling of Spring Constant and Pull-down Voltage of Non-uniform RF MEMS Cantilever Incorporating Stress Gradient

Directory of Open Access Journals (Sweden)

Shimul Chandra SAHA

2008-11-01

Full Text Available We have presented a model for spring constant and pull-down voltage of a non-uniform radio frequency microelectromechanical systems (RF MEMS cantilever that works on electrostatic actuation. The residual stress gradient in the beam material that may arise during the fabrication process is also considered in the model. Using basic force deflection calculation of the suspended beam, a stand-alone model for the spring constant and pull-down voltage of the non-uniform cantilever is developed. To compare the model, simulation is performed using standard Finite Element Method (FEM analysis tolls from CoventorWare. The model matches very well with the FEM simulation results. The model will offer an efficient means of design, analysis, and optimization of RF MEMS cantilever switches.

Characterization and Performance Comparison of Low-Voltage, High-Speed, Push-Pull and Traveling-Wave Silicon Mach-Zehnder Modulators

Science.gov (United States)

2014-03-27

unloaded transmission line is simply the coplanar strip waveguide (CPS), and is designed to have an impedance higher than 50Ω, as the capacitive load...microwave loss operation, with a junction capacitance of 0.41 fF at 0 V bias. From a macroscopic point of view, the push-pull design uses two electrodes...by ±5°. The chip mount is designed to hold a thermoelectric cooler (TEC) between two copper plates, and a temperature sensor in the top plate, above

A high voltage gain quasi Z-source isolated DC/DC converter

DEFF Research Database (Denmark)

Siwakoti, Yam P.; Blaabjerg, Frede; Loh, Poh Chiang

2014-01-01

A compact quasi-Z-source DC/DC converter is presented with high voltage gain, isolated output, and improved efficiency. The improvements in size and performance were achieved by using a square wave inverter with only two output switches driving an isolating transformer in push-pull mode, followed...... by a voltage doubling output rectifier. The converter is well-suited to applications requiring a high voltage gain, especially renewable energy sources such as photovoltaic and fuel-cell power supplies. To demonstrate the converter's performance a prototype designed to output 400 V at 500 W was constructed...

Capillary condensation and quantum vacuum effects on the pull-in voltage of electrostatic switches with self-affine rough plates

NARCIS (Netherlands)

Palasantzas, George

2006-01-01

In this work, we study the influence of capillary forces in combination with electrostatic and quantum vacuum generated forces on the pull-in voltage of microswitches having self-affine rough surfaces. This type of roughness is described by the rms roughness amplitude w, the in-plane correlation

Uranium metalla-allenes with carbene imido R{sub 2}C=U{sup IV}=NR' units (R=Ph{sub 2}PNSiMe{sub 3}; R'=CPh{sub 3}): alkali-metal-mediated push-pull effects with an amido auxiliary

Energy Technology Data Exchange (ETDEWEB)

Lu, Erli; Tuna, Floriana; Kaltsoyannis, Nikolas; Liddle, Stephen T. [School of Chemistry, The University of Manchester (United Kingdom); Lewis, William [School of Chemistry, The University of Nottingham (United Kingdom)

2016-08-08

We report uranium(IV)-carbene-imido-amide metalla-allene complexes [U(BIPM{sup TMS})(NCPh{sub 3})(NHCPh{sub 3})(M)] (BIPM{sup TMS}=C(PPh{sub 2}NSiMe{sub 3}){sub 2}; M=Li or K) that can be described as R{sub 2}C=U=NR' push-pull metalla-allene units, as organometallic counterparts of the well-known push-pull organic allenes. The solid-state structures reveal that the R{sub 2}C=U=NR' units adopt highly unusual cis-arrangements, which are also reproduced by gas-phase theoretical studies conducted without the alkali metals to remove their potential structure-directing roles. Computational studies confirm the double-bond nature of the U=NR' and U=CR{sub 2} interactions, the latter increasingly attenuated by potassium then lithium when compared to the hypothetical alkali-metal-free anion. Combined experimental and theoretical data show that the push-pull effect induced by the alkali metal cations and amide auxiliary gives a fundamental and tunable structural influence over the C=U{sup IV}=N units. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Tuning the hysteresis voltage in 2D multilayer MoS{sub 2} FETs

Energy Technology Data Exchange (ETDEWEB)

Jiang, Jie, E-mail: jiangjie@csu.edu.cn; Zheng, Zhouming; Guo, Junjie

2016-10-01

The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS{sub 2} transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS{sub 2} FET. This simple method for tuning the hysteresis voltage of MoS{sub 2} FET can make a significant step toward 2D nanoelectronic device applications.

Optical fiber imaging for high speed plasma motion diagnostics: Applied to low voltage circuit breakers

International Nuclear Information System (INIS)

McBride, J. W.; Balestrero, A.; Tribulato, G.; Ghezzi, L.; Cross, K. J.

2010-01-01

An integrated portable measurement system is described for the study of high speed and high temperature unsteady plasma flows such as those found in the vicinity of high current switching arcs. An array of optical fibers allows the formation of low spatial resolution images, with a maximum capture rate of 1x10 6 images per second (1 MHz), with 8 bit intensity resolution. Novel software techniques are reported to allow imaging of the arc; and to measure arc trajectories. Results are presented on high current (2 kA) discharge events in a model test fixture and on the application to a commercial low voltage circuit breaker.

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

Science.gov (United States)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

Advances in high voltage power switching with GTOs

International Nuclear Information System (INIS)

Podlesak, T.F.

1990-01-01

The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. The authors report a high voltage opening switch has been successfully demonstrated. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This demonstration system is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly

Mass impregnation plant speeds high voltage cable production

Energy Technology Data Exchange (ETDEWEB)

1965-05-07

A mass impregnation and continuous sheath extrusion plant that will eliminate the long period of vacuum treatment usually required for high voltage oil-filled cables is among the latest techniques included in the new factory at Pirelli General's Eastleigh works. The new factory is said to be the first in Europe designed solely for the manufacture of the full range of oil-filled cables. Possible future increases of system voltages to about 750-kV ac or 1000-kV dc have been taken into account in the design of the works, so that only a small amount of modification and new plant will be involved.

High Bandwidth Zero Voltage Injection Method for Sensorless Control of PMSM

DEFF Research Database (Denmark)

Ge, Xie; Lu, Kaiyuan; Kumar, Dwivedi Sanjeet

2014-01-01

High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses to be inj......High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses...... in a fast current regulation performance. Injection of zero voltage also minimizes the inverter voltage error effects caused by the dead-time....

Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

Energy Technology Data Exchange (ETDEWEB)

Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

2015-07-07

Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

Effect of Nb doping on electrochemical properties of LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} at high cutoff voltage for lithium-ion battery

Energy Technology Data Exchange (ETDEWEB)

Wu, Jiefan [School of Chemical Engineering and Technology, Hebei University of Technology, Tianjin 300130 (China); Liu, Hongguang, E-mail: hongguangliu_01@163.com [School of Chemical Engineering and Technology, Hebei University of Technology, Tianjin 300130 (China); CNOOC Tianjin Chemical Research & Design Institute, Tianjin 300131 (China); Ye, Xuehai; Xia, Jiping; Lu, Yang; Lin, Chaowang; Yu, Xiaowei [CNOOC Tianjin Chemical Research & Design Institute, Tianjin 300131 (China)

2015-09-25

Highlights: • Nb substituted LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3−x}Nb{sub x}O{sub 2} (x = 0–0.03) was prepared by sol–gel method. • 2% Nb-substituted sample showed better cycle performance at high cutoff voltage. • Ex situ analysis was used to show the structure changes of Nb-doped samples. - Abstract: Nb doped cathode materials with the formula LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3−x}Nb{sub x}O{sub 2} (x = 0, 0.01, 0.02, 0.03) have been prepared successfully by sol–gel method. The effect of Nb substitution on the crystal structure and electrochemical properties of LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} were studied systematically by X-ray diffraction (XRD) and various electrochemical measurements. The results showed Nb substitution played an important role in the good cycling performance of LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2}. Charge/discharge tests revealed that LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3–0.02}Nb{sub 0.02}O{sub 2} showed a capacity retention of 94.1% at 1 C after 50 cycles in a high cutoff voltage range (3.0–4.6 V), while discharge capacity of LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} remains only 89.4% of that at 1 C. Ex-situ XRD analysis and EIS analysis indicated that the improved electrochemical properties of Nb-doped sample result from the more stable structure and lower resistance during the electrochemical cycling.

Specific Localization of High-Voltage Discharge in Vicinity of Two Gases

Science.gov (United States)

Leonov, Sergey; Shurupov, Michail; Shneider, Michail; Napartovich, Anatoly; Kochetov, Igor

2011-10-01

A subject of paper is the appearance and dynamics of sub-microsecond long filamentary high-voltage discharge generated in atmosphere, and in non-homogeneous gaseous media. Typical discharge parameters are: maximal current 1-3kA, breakdown voltage >100 kV, duration 30-100 ns, gap distance 50-100mm. The effect of discharge specific localization within mixing layer of two gases is particularly discussed. The second discussed idea is the filamentary discharge movement within a region with concentration gradient of different components. For the short-pulse discharge the physical mechanism appears as the following. The first stage of the spark breakdown is the multiple streamers propagation from the high-voltage electrode toward the grounded one. In case of high-power electrical source those streamers occupy a huge volume of the gas, covering all possible paths for the further development. The next phase consists of the real selection of the discharge path among the multiple channels with non-zero conductivity. Experiments and calculations are presented for Air-CO2 and Air-C2H4 pairs. The effects found are supposed to be applied for lightning prediction/protection, and for high-speed mixing acceleration. The work was funded through EOARD-ISTC project #3793p. Some part of this work was supported by RFBR grant #10-08-00952.

Variable speed wind turbine generator system with current controlled voltage source inverter

International Nuclear Information System (INIS)

Muyeen, S.M.; Al-Durra, Ahmed; Tamura, J.

2011-01-01

highlights: → Current controlled voltage source inverter scheme for wind power application. → Low voltage ride through of wind farm. → Variable speed wind turbine driven permanent magnet synchronous generator-operation and control. -- Abstract: The present popular trend of wind power generation is to use variable speed wind turbine (VSWT) driving a doubly fed induction generator (DFIG), wound field synchronous generator (WFSG) or permanent magnet synchronous generator (PMSG). Among them, stability analyses of DFIG type of VSWT have already been reported in many literatures. However, transient stability and low voltage ride through (LVRT) characteristics analyses for synchronous generator type of VSWT is not sufficient enough. This paper focuses on detailed LVRT characteristic analysis of variable speed wind turbine driving a PMSG (VSWT-PMSG) with current controlled voltage source inverter (CC-VSI). Modeling and suitable control strategies for overall system are developed to augment the low voltage ride through capability of variable speed wind generator, considering recent wind farm grid code. Both symmetrical and unsymmetrical faults are analyzed as network disturbances in this paper. The permanent fault due to unsuccessful reclosing of circuit breakers is taken into consideration, which is a salient feature of this study. Moreover, the dynamic characteristic is analyzed using real wind speed data measured in Hokkaido Island, Japan. The proposed control scheme is simulated by using the standard power system simulation package PSCAD/EMTDC and results are verified by comparing that of voltage controlled voltage source inverter scheme available in power system literature.

Variable speed wind turbine generator system with current controlled voltage source inverter

Energy Technology Data Exchange (ETDEWEB)

Muyeen, S.M., E-mail: muyeen0809@yahoo.co [Dept. of Electrical Engineering, Petroleum Institute, P.O. Box 2533, Abu Dhabi (United Arab Emirates); Al-Durra, Ahmed [Dept. of Electrical Engineering, The Petroleum Institute, P.O. Box 2533, Abu Dhabi (United Arab Emirates); Tamura, J. [Dept. of EEE, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507 (Japan)

2011-07-15

highlights: {yields} Current controlled voltage source inverter scheme for wind power application. {yields} Low voltage ride through of wind farm. {yields} Variable speed wind turbine driven permanent magnet synchronous generator-operation and control. -- Abstract: The present popular trend of wind power generation is to use variable speed wind turbine (VSWT) driving a doubly fed induction generator (DFIG), wound field synchronous generator (WFSG) or permanent magnet synchronous generator (PMSG). Among them, stability analyses of DFIG type of VSWT have already been reported in many literatures. However, transient stability and low voltage ride through (LVRT) characteristics analyses for synchronous generator type of VSWT is not sufficient enough. This paper focuses on detailed LVRT characteristic analysis of variable speed wind turbine driving a PMSG (VSWT-PMSG) with current controlled voltage source inverter (CC-VSI). Modeling and suitable control strategies for overall system are developed to augment the low voltage ride through capability of variable speed wind generator, considering recent wind farm grid code. Both symmetrical and unsymmetrical faults are analyzed as network disturbances in this paper. The permanent fault due to unsuccessful reclosing of circuit breakers is taken into consideration, which is a salient feature of this study. Moreover, the dynamic characteristic is analyzed using real wind speed data measured in Hokkaido Island, Japan. The proposed control scheme is simulated by using the standard power system simulation package PSCAD/EMTDC and results are verified by comparing that of voltage controlled voltage source inverter scheme available in power system literature.

Speed Control of Matrix Converter-Fed Five-Phase Permanent Magnet Synchronous Motors under Unbalanced Voltages

Directory of Open Access Journals (Sweden)

Borzou Yousefi

2017-09-01

Full Text Available Five-phase permanent magnet synchronous motors (PMSM have special applications in which highly accurate speed and torque control of the motor are a strong requirement. Direct Torque Control (DTC is a suitable method for the driver structure of these motors. If in this method, instead of using a common five-phase voltage source inverter, a three-phase to five-phase matrix converter is used, the low-frequency current harmonics and the high torque ripple are limited, and an improved input power factor is obtained. Because the input voltages of such converters are directly supplied by input three-phase supply voltages, an imbalance in the voltages will cause problems such as unbalanced stator currents and electromagnetic torque fluctuations. In this paper, a new method is introduced to remove speed and torque oscillator factors. For this purpose, motor torque equations were developed and the oscillation components created by the unbalanced source voltage, determined. Then, using the active and reactive power reference generator, the controller power reference was adjusted in such a way that the electromagnetic torque of the motor did not change. By this means, a number of features including speed, torque, and flux of the motor were improved in terms of the above-mentioned conditions. Simulations were analyzed using Matlab/Simulink software.

IEEE 693 seismic qualification of composites for substation high-voltage equipment

Energy Technology Data Exchange (ETDEWEB)

Schiff, A.J. [Precision Measurement Instruments, Los Altos Hills, CA (United States); Kempner, L.Jr. [Bonneville Power Administration, Vancouver, BC (Canada)

2004-07-01

Standard 693-1997 of the Institute of Electrical and Electronic Engineers (IEEE) is the recommended practice for seismic design of substations. It represents a significant improvement in the way the power industry seismically qualifies substation high-voltage equipment. This paper described the use of IEEE Standard 693 for hollow-core composite insulators that are used on high-voltage transformers and demonstrated that changes are warranted. The following four failure modes associated with the composite insulator were discussed: bond degradation, bond failure, tube degradation and tube layer delamination. The authors evaluated the IEEE 693 qualification procedure of time history shake-table and static-pull tests and were concerned about acceptance criteria. It was shown that acceptance criteria are not valid for qualifying hollow-core composites and that static-pull tests are needed after the vibration qualification tests are completed. It was suggested that more research is warranted to determine if bonding at the top part of the flange can be eliminated, thereby eliminating bond degradation. The resulting increase in system damping would improve the dynamic response of the unit. 1 ref., 10 figs.

A Study of Quality of Service Communication for High-Speed Packet-Switching Computer Sub-Networks

Science.gov (United States)

Cui, Zhenqian

1999-01-01

In this thesis, we analyze various factors that affect quality of service (QoS) communication in high-speed, packet-switching sub-networks. We hypothesize that sub-network-wide bandwidth reservation and guaranteed CPU processing power at endpoint systems for handling data traffic are indispensable to achieving hard end-to-end quality of service. Different bandwidth reservation strategies, traffic characterization schemes, and scheduling algorithms affect the network resources and CPU usage as well as the extent that QoS can be achieved. In order to analyze those factors, we design and implement a communication layer. Our experimental analysis supports our research hypothesis. The Resource ReSerVation Protocol (RSVP) is designed to realize resource reservation. Our analysis of RSVP shows that using RSVP solely is insufficient to provide hard end-to-end quality of service in a high-speed sub-network. Analysis of the IEEE 802.lp protocol also supports the research hypothesis.

Design of high-speed ECT and ERT system

International Nuclear Information System (INIS)

Wang Baoliang; Huang Zhiyao; Li Haiqing

2009-01-01

Process tomography technique provides a novel method to investigate the multi-phase flow distribution inside pipe or vessel. Electrical resistance tomography (ERT) and electrical capacitance tomography (ECT) are extensively studied in recent years. As the capacitance to voltage and resistance to voltage converters run faster, the speeds of other circuits in the system, such as MCU, A/D, D/A etc, have become the bottlenecks of improving the speed. This paper describes a new dual-modal, ECT and ERT, data acquisition system. The system is controlled by a digital signal processor. Both the ERT and the ECT systems use one platform to simplify the system design and maintenance. The system can work at high speed which is only limited by the capacitance to voltage converter or resistance to voltage converter. Primary test results show the speed of the new system is 1400 frames/second for 16-electrode ERT and 2200 frames/second for 12-electrode ECT.

Fast Pulling of n-Type Si Ingots for Enhanced Si Solar Cell Production

Science.gov (United States)

Kim, Kwanghun; Park, Sanghyun; Park, Jaechang; Pang, Ilsun; Ryu, Sangwoo; Oh, Jihun

2018-03-01

Reducing the manufacturing costs of silicon substrates is an important issue in the silicon-based solar cell industry. In this study, we developed a high-throughput ingot growth method by accelerating the pulling speed in the Czochralski process. By controlling the heat flow of the ingot growth chamber and at the solid-liquid interfaces, the pulling speed of an ingot could be increased by 15% compared to the conventional method, while retaining high quality. The wafer obtained at a high pulling speed showed an enhanced minority carrier lifetime compared with conventional wafers, due to the vacancy passivation effect, and also demonstrated comparable bulk resistivity and impurities. The results in this work are expected to open a new way to enhance the productivity of Si wafers used for Si solar cells, and therefore, to reduce the overall manufacturing cost.

Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

2017-04-15

Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

Energy Technology Data Exchange (ETDEWEB)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

2017-03-15

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Optimizing AlF{sub 3} atomic layer deposition using trimethylaluminum and TaF{sub 5}: Application to high voltage Li-ion battery cathodes

Energy Technology Data Exchange (ETDEWEB)

Jackson, David H. K., E-mail: david.jackson@wisc.edu; Kuech, Thomas F. [Materials Science Program, University of Wisconsin–Madison, Madison, Wisconsin 53706 and Department of Chemical and Biological Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706 (United States); Laskar, Masihhur R.; Ellis, Ryan G. [Department of Chemical and Biological Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706 (United States); Fang, Shuyu; Hamers, Robert J. [Department of Chemistry, University of Wisconsin–Madison, Madison, Wisconsin 53706 (United States); Xu, Shenzhen; Li, Xiaoqing; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706 (United States); Dreibelbis, Mark [Core R& D, Inorganic Materials and Heterogeneous Catalysis, The Dow Chemical Company, Midland, Michigan 48674 (United States); Babcock, Susan E. [Materials Science Program, University of Wisconsin–Madison, Madison, Wisconsin 53706 and Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706 (United States); Mahanthappa, Mahesh K. [Materials Science Program, University of Wisconsin–Madison, Madison, Wisconsin 53706 and Department of Chemistry, University of Wisconsin–Madison, Madison, Wisconsin 53706 (United States)

2016-05-15

Atomic layer deposition (ALD) of conformal AlF{sub 3} coatings onto both flat silicon substrates and high-voltage LiNi{sub 0.5}Mn{sub 0.3}Co{sub 0.2}O{sub 2} (NMC) Li-ion battery cathode powders was investigated using a Al(CH{sub 3}){sub 3}/TaF{sub 5} precursor combination. This optimized approach employs easily handled ALD precursors, while also obviating the use of highly toxic HF(g). In studies conducted on planar Si wafers, the film's growth mode was dictated by a competition between the desorption and decomposition of Ta reaction byproducts. At T ≥ 200 °C, a rapid decomposition of the Ta reaction byproducts to TaC led to continuous deposition and high concentrations of TaC in the films. A self-limited ALD growth mode was found to occur when the deposition temperature was reduced to 125 °C, and the TaF{sub 5} exposures were followed by an extended purge. The lower temperature process suppressed conversion of TaF{sub x}(CH{sub 3}){sub 5−x} to nonvolatile TaC, and the long purges enabled nearly complete TaF{sub x}(CH{sub 3}){sub 5−x} desorption, leaving behind the AlF{sub 3} thin films. NMC cathode powders were coated using these optimized conditions, and coin cells employing these coated cathode particles exhibited significant improvements in charge capacity fade at high discharge rates.

DC dynamic pull-in predictions for a generalized clamped–clamped micro-beam based on a continuous model and bifurcation analysis

International Nuclear Information System (INIS)

Chao, Paul C-P; Chiu, C W; Liu, Tsu-Hsien

2008-01-01

This study is devoted to providing precise predictions of the dc dynamic pull-in voltages of a clamped–clamped micro-beam based on a continuous model. A pull-in phenomenon occurs when the electrostatic force on the micro-beam exceeds the elastic restoring force exerted by beam deformation, leading to contact between the actuated beam and bottom electrode. DC dynamic pull-in means that an instantaneous application of the voltage (a step function such as voltage) is applied. To derive the pull-in voltage, a dynamic model in partial differential equations is established based on the equilibrium among beam flexibility, inertia, residual stress, squeeze film, distributed electrostatic forces and its electrical field fringing effects. The method of Galerkin decomposition is then employed to convert the established system equations into reduced discrete modal equations. Considering lower-order modes and approximating the beam deflection by a different order series, bifurcation based on phase portraits is conducted to derive static and dynamic pull-in voltages. It is found that the static pull-in phenomenon follows dynamic instabilities, and the dc dynamic pull-in voltage is around 91–92% of the static counterpart. However, the derived dynamic pull-in voltage is found to be dependent on the varied beam parameters, different from a fixed predicted value derived in past works, where only lumped models are assumed. Furthermore, accurate closed-form predictions are provided for non-narrow beams. The predictions are finally validated by finite element analysis and available experimental data

Enhanced high voltage cyclability of LiCoO{sub 2} cathode by adopting poly[bis-(ethoxyethoxyethoxy)phosphazene] with flame-retardant property as an electrolyte additive for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Zhou, Mingjiong; Qin, Chenyang; Liu, Zhen; Feng, Li; Su, Xiaoru; Chen, Yifeng [School of Materials Science and Chemical Engineering, Ningbo University, Fenghua Road 818, Ningbo, 315211 (China); Xia, Lan, E-mail: Lan.Xia@nottingham.edu.cn [Department of Chemical and Environmental Engineering, Faculty of Science and Engineering, Centre for Sustainable Energy Technologies (CSET), University of Nottingham Ningbo China, Taikang East Road 199, Ningbo, 315100 (China); Ningbo Institute of Materials Technology & Engineering (NIMTE), Chinese Academy of Science (CAS), Zhongguan West Road 1219, Ningbo, 315201 (China); Xia, Yonggao, E-mail: xiayg@nimte.ac.cn [Ningbo Institute of Materials Technology & Engineering (NIMTE), Chinese Academy of Science (CAS), Zhongguan West Road 1219, Ningbo, 315201 (China); Liu, Zhaoping [Ningbo Institute of Materials Technology & Engineering (NIMTE), Chinese Academy of Science (CAS), Zhongguan West Road 1219, Ningbo, 315201 (China)

2017-05-01

Highlights: • EEEP with electro-oxidable of the P-O bond can serves as a high-voltage additive. • EEEP tend to be electro-oxidized on LiCoO{sub 2} cathode prior to the solvents. • The high-voltage cyclability of LiCoO{sub 2} cathode is obviously improved using EEEP. - Abstract: Poly[bis-(ethoxyethoxyethoxy)phosphazene] (EEEP) with electro-oxidable of the P-O bond is prepared by a facile method and utilized as an electrolyte additive to enhance the cycling performance of LiCoO{sub 2} cathodes under high-voltage operations. We found that 5 wt.% EEEP made the blank electrolyte obviously reduce the flammability, as well as the capacity retention of Li/LiCoO{sub 2} half-cell assembling with the EEEP-containing electrolyte is elevated to 89.9% from 51.2% after 100 cycles at a high cutoff voltage of 4.4 V. The enhanced cycling performance of LiCoO{sub 2} cathode in the EEEP-containing electrolyte at a high potential should be ascribed to the formation of stable film on the cathode surface, resulting in suppression of the subsequent decomposition of electrolyte under high voltage working. The characterization from scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) indicates that EEEP can be electrochemically oxidized to form a robust and protective film on LiCoO{sub 2}, and improve the interfacial stability of LiCoO{sub 2} cathode/electrolyte at high potentials.

High-voltage isolation transformer for sub-nanosecond rise time pulses constructed with annular parallel-strip transmission lines.

Science.gov (United States)

Homma, Akira

2011-07-01

A novel annular parallel-strip transmission line was devised to construct high-voltage high-speed pulse isolation transformers. The transmission lines can easily realize stable high-voltage operation and good impedance matching between primary and secondary circuits. The time constant for the step response of the transformer was calculated by introducing a simple low-frequency equivalent circuit model. Results show that the relation between the time constant and low-cut-off frequency of the transformer conforms to the theory of the general first-order linear time-invariant system. Results also show that the test transformer composed of the new transmission lines can transmit about 600 ps rise time pulses across the dc potential difference of more than 150 kV with insertion loss of -2.5 dB. The measured effective time constant of 12 ns agreed exactly with the theoretically predicted value. For practical applications involving the delivery of synchronized trigger signals to a dc high-voltage electron gun station, the transformer described in this paper exhibited advantages over methods using fiber optic cables for the signal transfer system. This transformer has no jitter or breakdown problems that invariably occur in active circuit components.

Investigation of the Effect of Internal Mold Release Agent and Filler on the Pulling Force in Pultrusion Process

Directory of Open Access Journals (Sweden)

M. Esfandeh

2007-08-01

Full Text Available Pulling force is one of the most important variables in pultrusion process which determines the capacity of the pultrusion machine. One of the characteristics of a desired pultrusion process is a low pulling force and a high line speed.Among the important factors affecting the pulling force are the internal mold release agent (IMR and the content and particle size of the filler in resin formulation. In addition to facilitating the part separation from the die, IMR also affects the curing kinetics and in turn the pulling force. In this research, a commercial IMR has been used in a range 1-5 phr. DSC and DMTAAnalyses showed that the presence of IMR in concentrations above 3 phr reduces the heat of curing reaction and also the curing rate. This results in an increase in pulling force. Study of filler effect showed that the increase in filler content from 4 to 8 phr reduces the pulling force but beyond that it is increased. Also, decreasing the filler particle size in line speed lower than 30 cm/min reduces the pulling force but increases it at higher line speed.

The high voltage homopolar generator

Science.gov (United States)

Price, J. H.; Gully, J. H.; Driga, M. D.

1986-11-01

System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

Energy requirements of tire pulling.

Science.gov (United States)

Fredriksen, Per M; Mamen, Asgeir

2017-10-01

We have investigated the effect using walking poles and pulling tires at 4 and 6 km·h-1 (1.11 and 1.67 m·s-1) speeds on oxygen uptake (V̇O2) and heart rate. Eleven subjects, 6 males, with a mean (SD) age of 25.2 (6.9) years participated in field tests involving walking without poles, walking with poles and tire pulling with poles. Increasing the load caused the largest increases in energy demand, more than 4 MET. Speed increase also caused substantial energy increase, approximately 4 MET. Increasing the inclination only modestly increased the oxygen uptake, approximately 2 MET. In both level walking and uphill walking, using poles marginally increased oxygen uptake compared to working without poles. Pulling one tire (12.5 kg) required an oxygen uptake of 27 (4) mL·kg-1·min-1 at 4 km·h-1 and 0% inclination. Adding one more tire (6 kg) drove the oxygen uptake further up to 39 (4) mL·kg-1·min-1. This is close to the requirement of level running at 10.5 km·h-1. Pulling both tires at 6 km·h-1 and 5% inclination required a V̇O2 of 54 (6) mL·kg-1·min-1, equal to running uphill at 5% inclination and 12.5 km·h-1 speed. Heart rate rose comparably with oxygen uptake. At 4 km·h-1 and 0% inclination the increase was 29 bpm, from 134 (21) to 163 (22) bpm when going from pulling one tire to two tires. In the hardest exercise, 6 km·h-1 and 5% inclination, heart rate reached 174 (14) bpm. The study showed that tire pulling even at slow speeds has an energy requirement that is so large that the activity may be feasible as endurance training.

Amorphous-like interfacial layer between a high-T{sub c} superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Kim, Bongjun; Kim, Hyuntak [Electronics and Tele-Communications Research Institute, Daejeon (Korea, Republic of); Nagai, Takuro; Matsui, Yoshio [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Horiuchi, Shigeo; Jeong, Daeyeong [Electrotechnology Research Institute, Changwon (Korea, Republic of); Deinhofer, Christian; Gritzner, Gerhard [Johannes Kepler University, Linz (Austria); Kim, Youngmin; Kim, Younjoong [Electron Microscopy Team, Korea Basic Science Institute, Daejeon (Korea, Republic of)

2006-05-15

The thin amorphous-like layer, formed at the interface between a high-T{sub c} superconducting (Tl{sub 0.5}, Pb{sub 0.5})(Sr{sub 0.8}, Ba{sub 0.2})Ca{sub 2}Cu{sub 3}O{sub y} (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO{sub 2} + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

Accurate electrostatic and van der Waals pull-in prediction for fully clamped nano/micro-beams using linear universal graphs of pull-in instability

Science.gov (United States)

Tahani, Masoud; Askari, Amir R.

2014-09-01

In spite of the fact that pull-in instability of electrically actuated nano/micro-beams has been investigated by many researchers to date, no explicit formula has been presented yet which can predict pull-in voltage based on a geometrically non-linear and distributed parameter model. The objective of present paper is to introduce a simple and accurate formula to predict this value for a fully clamped electrostatically actuated nano/micro-beam. To this end, a non-linear Euler-Bernoulli beam model is employed, which accounts for the axial residual stress, geometric non-linearity of mid-plane stretching, distributed electrostatic force and the van der Waals (vdW) attraction. The non-linear boundary value governing equation of equilibrium is non-dimensionalized and solved iteratively through single-term Galerkin based reduced order model (ROM). The solutions are validated thorough direct comparison with experimental and other existing results reported in previous studies. Pull-in instability under electrical and vdW loads are also investigated using universal graphs. Based on the results of these graphs, non-dimensional pull-in and vdW parameters, which are defined in the text, vary linearly versus the other dimensionless parameters of the problem. Using this fact, some linear equations are presented to predict pull-in voltage, the maximum allowable length, the so-called detachment length, and the minimum allowable gap for a nano/micro-system. These linear equations are also reduced to a couple of universal pull-in formulas for systems with small initial gap. The accuracy of the universal pull-in formulas are also validated by comparing its results with available experimental and some previous geometric linear and closed-form findings published in the literature.

Facile synthesis of aluminum-doped LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} hollow microspheres and their electrochemical performance for high-voltage Li-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiaolin, E-mail: liu_x_l@sina.cn [College of Material Science and Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi (China); Li, Dan; Mo, Qiaoling; Guo, Xiaoyu; Yang, Xiaoxiao [College of Material Science and Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi (China); Chen, Guoxin, E-mail: gxchen@nimte.ac.cn [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang (China); Zhong, Shengwen [College of Material Science and Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi (China)

2014-10-01

Graphical abstract: LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} and Al doped LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} hollow microspheres as 5 V cathodes are prepared by templated transformation method using monodisperse MnCO{sub 3} microspheres as precursor. As a cathodic material for high voltage lithium ion batteries, the as-synthesized LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} and Al doped LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} hollow microspheres are investigated by galvanostatic cycling (GC) approach to evaluate their electrochemical properties in the range of 2.7–4.8 V vs. Li/Li{sup +} at the current rate 1 C. - Highlights: • LNMO and LANMO hollow microspheres are synthesized by template method. • The as-synthesized hollow microspheres have particle-size of 2 μm. • The hollow structure is responsible for improved electrochemical performance. - Abstract: This paper presents the preparation of LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} and aluminum (Al) doped LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} hollow microspheres as 5 V cathodes using monodisperse MnCO{sub 3} microspheres as precursor and template, which were synthesized using MnSO{sub 4}·H{sub 2}O, NaHCO{sub 3} and ethanol in water at room temperature. XRD and morphology characterization results indicated that the as-prepared LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} and Al doped LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} were both spinel structure, and have particle sizes of 2–3 μm. The cathode electrochemical properties of LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} and Al doped LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} hollow microspheres (as 5 V cathodes) were evaluated and compared by galvanostatic cycling (GC) vs. Li/Li{sup +} at the current rate 1 C in 2.7–4.8 V. The specific initial capacities of all samples were in the range of 70–120 mA h g{sup −1}. Compared to undoped LiNi{sub 0.5}Mn{sub 1.5}O{sub 4}, Al doped LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} hollow structures can effectively improve discharge capacity (up to 140 (±5) mA h g{sup −1}) and cycling stability (70

A novel on-chip high to low voltage power conversion circuit

International Nuclear Information System (INIS)

Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong; Lai Xinquan; Ye Qiang; Li Xianrui

2009-01-01

A novel power supply transform technique for high voltage IC based on the TSMC 0.6 μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm 2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

A novel on-chip high to low voltage power conversion circuit

Energy Technology Data Exchange (ETDEWEB)

Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong [Institute of Mechano-electronic Engineering, Xidian University, Xi' an 71007 (China); Lai Xinquan; Ye Qiang; Li Xianrui, E-mail: whui94@126.co [Institute of Electronic CAD, Xidian University, Xi' an 710071 (China)

2009-03-15

A novel power supply transform technique for high voltage IC based on the TSMC 0.6 mum BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm{sup 2} area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

Photoreduction of Ag{sup +} in Ag/Ag{sub 2}S/Au memristor

Energy Technology Data Exchange (ETDEWEB)

Mou, N.I.; Tabib-Azar, M., E-mail: azar.m@utah.edu

2015-06-15

Highlights: • The effect of illumination on the operating voltages and switching speed of Ag/Ag{sub 2}S/Au memristors is studied • Illumination decreased the average switching time from high to low resistance states by ∼19% and decreased the turn-off voltages dramatically from −0.8 V to −0.25 V. • Photo-induced reduction of silver in Ag{sub 2}S may be used in three dimensional optical memories that can be electronically read and reset. • Illumination changed sulfur's valency and modified its oxidation/reduction potential. - Abstract: Silver halides and chalcogenides are excellent memristor materials that have been extensively used in the past as photosensitive layers in photography. Here we examine the effect of illumination on the operating voltages and switching speed of Ag/Ag{sub 2}S/Au memristors using a green laser (473–523 nm). Our results indicate that illumination decreases the average switching time from high to low resistance states by ∼19% and decreases the turn-off voltages dramatically from −0.8 V to −0.25 V that we attribute to the change in sulfur valency and a photo-induced change in its oxidation/reduction potential. Photo-induced reduction of silver in Ag{sub 2}S may be used in three dimensional optical memories that can be electronically read and reset.

High Voltage GaN Schottky Rectifiers

Energy Technology Data Exchange (ETDEWEB)

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

Synthesis of Li{sub 2}Si{sub 2}O{sub 5}-coated LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} cathode materials with enhanced high-voltage electrochemical properties for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Liu, Shengjie; Wu, Hao; Huang, Ling; Xiang, Mingwu; Liu, Heng; Zhang, Yun, E-mail: y_zhang@scu.edu.cn

2016-07-25

Ni-rich ternary layered oxides, (LiNi{sub x} [M]{sub 1−x}O{sub 2}, x ≥ 0.5, M = Co and Mn), have become one of the mainstream cathode materials for next-generation lithium-ion batteries due to their high capacity and cost efficiency compared with LiCoO{sub 2}. However, the high-voltage operation of the Ni-rich oxides (>4.3 V) required for high capacity is inevitably accompanied with a rapid capacity decay over numerous cycles. In this work, we reported a surface coating of LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} with Li{sub 2}Si{sub 2}O{sub 5}via a facile and efficient synthetic approach, which involves the employment of silicic acid (H{sub 2}SiO{sub 3}) as remover to react with the surface residual lithium compounds (e.g. Li{sub 2}CO{sub 3} and LiOH) of LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} and consequent formation of a robust and complete Li{sup +}-conductive Li{sub 2}Si{sub 2}O{sub 5} protective coating layer. The structure and morphology of the coated cathode materials are fully characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Compared with the pristine LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2}, coating with the Li{sup +}-conductive Li{sub 2}Si{sub 2}O{sub 5} is found to be very effective for improving the rate capability of the LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} when evaluated at a high cut-off voltage up to 4.5 V. Specifically, 1 wt. % H{sub 2}SiO{sub 3}-treated LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} electrode exhibits high discharge specific capacities of 213.9 and 121.6 mAh g{sup −1} at 0.1 and 10 C, respectively, whereas the pristine electrode only shows 196.8 and 92.1 mAh g{sup −1}. Besides, the surface-modified LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} electrode also manifests an enhanced long-term cycling stability (67% capacity retention after 200 cycles at 5 C), much better than the pristine

High voltage performance of BARC-TIFR Pelletron Accelerator

Energy Technology Data Exchange (ETDEWEB)

Surendran, P.; Ansari, Q.N.; Nair, J.P., E-mail: surendra@tifr.res.in [Nuclear Physics Division, Bhabha Atomic Research Centre, Mumbai (India); and others

2014-07-01

The 14 UD Pelletron Accelerator at TIFR, Mumbai is operational since its inception in 1988. It was decided to impart enough time for high voltage conditioning to achieve higher operational voltage. Prior to this, comprehensive works such as replacing all the sputter ion pumps and Titanium sublimation pumps across the accelerator tube with new or refurbished ones and replacement of Alumina balls in the SF{sub 6} drier with fresh balls were carried out. High voltage conditioning of each module was done. Further conditioning of two modules at a time in overlapping mode improved the terminal voltage. As a result of this rigorous conditioning Terminal voltage of 12.6 MV was achieved and beam has been delivered to users at 12 MV terminal. Details of this effort will be presented in this paper. (author)

Control of a high-speed switched reluctance machine using only the DC-link measurements

NARCIS (Netherlands)

Marinkov, Sava; De Jager, Bram

2015-01-01

In this paper we present a novel speed control strategy for a high-speed Switched Reluctance Machine that uses only the DC-link voltage and current measurements. This eliminates a number of hardware components such as position, speed, phase current and phase voltage sensors. It further lowers the

Comparison of different applied voltage waveforms on CO{sub 2} reforming of CH{sub 4} in an atmospheric plasma system

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Duc Ba; Lee, Won Gyu [Kangwon National University, Chuncheon (Korea, Republic of)

2015-01-15

Sinusoidal and pulse waveforms of applied voltage were employed for CO{sub 2} reforming of CH{sub 4} to syngas in an atmospheric dielectric barrier discharge reactor. The discharge power of a pulse waveform was higher than that of sinusoidal waveform at the same applied voltage. The plasma reaction by a pulse waveform enhanced the conversion of CO{sub 2} and CH{sub 4} and the selectivity of H{sub 2} and CO. It was confirmed that CO{sub 2} reforming of CH{sub 4} can be improved by the adaption of pulse-type power supply in a dielectric barrier discharge reactor immersed in an electrically insulating oil bath.

New non-linear control strategy for non-isolated DC/DC converter with high voltage ratio

Energy Technology Data Exchange (ETDEWEB)

Shahin, A.; Huang, B.; Martin, J.P.; Pierfederici, S.; Davat, B. [Groupe de Recherche en Electronique et en Electrotechnique de Nancy - INPL - Nancy Universite, 2, Avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy Cedex (France)

2010-01-15

In this paper, a non-isolated DC/DC converter with high voltage ratio is proposed to allow the interface between a low voltage power source like fuel cell and a high voltage DC bus. To take into account the low voltage-high density characteristics of power sources, a cascaded structure composed of two sub-converters has been chosen and allows obtaining a high voltage ratio. The choice of each sub-converter is based on the requirements of the source and its performances. Consequently, we have chosen a three-interleaved boost converter as the 1st sub-converter whereas the 2nd sub-converter is a three-level boost converter. The control of the whole system is realized thanks to energetic trajectories planning based on flatness properties of the system. The control of both the current and the balance of voltage across the output serial capacitors of the three-level boost converter is ensured by non-linear controllers based on a new non-linear model. Experimental results allow validating the proposed power architecture and its associated control. (author)

New non-linear control strategy for non-isolated DC/DC converter with high voltage ratio

International Nuclear Information System (INIS)

Shahin, A.; Huang, B.; Martin, J.P.; Pierfederici, S.; Davat, B.

2010-01-01

In this paper, a non-isolated DC/DC converter with high voltage ratio is proposed to allow the interface between a low voltage power source like fuel cell and a high voltage DC bus. To take into account the low voltage-high density characteristics of power sources, a cascaded structure composed of two sub-converters has been chosen and allows obtaining a high voltage ratio. The choice of each sub-converter is based on the requirements of the source and its performances. Consequently, we have chosen a three-interleaved boost converter as the 1st sub-converter whereas the 2nd sub-converter is a three-level boost converter. The control of the whole system is realized thanks to energetic trajectories planning based on flatness properties of the system. The control of both the current and the balance of voltage across the output serial capacitors of the three-level boost converter is ensured by non-linear controllers based on a new non-linear model. Experimental results allow validating the proposed power architecture and its associated control.

Elevated voltage level I.sub.DDQ failure testing of integrated circuits

Science.gov (United States)

Righter, Alan W.

1996-01-01

Burn in testing of static CMOS IC's is eliminated by I.sub.DDQ testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip.

Suppressing voltage transients in high voltage power supplies

International Nuclear Information System (INIS)

Lickel, K.F.; Stonebank, R.

1979-01-01

A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

Scapula kinematics of pull-up techniques: Avoiding impingement risk with training changes.

Science.gov (United States)

Prinold, Joe A I; Bull, Anthony M J

2016-08-01

Overhead athletic activities and scapula dyskinesia are linked with shoulder pathology; pull-ups are a common training method for some overhead sports. Different pull-up techniques exist: anecdotally some are easier to perform, and others linked to greater incidences of pathology. This study aims to quantify scapular kinematics and external forces for three pull-up techniques, thus discussing potential injury implications. An observational study was performed with eleven participants (age=26.8±2.4 years) who regularly perform pull-ups. The upward motions of three pull-up techniques were analysed: palms facing anterior, palms facing posterior and wide-grip. A skin-fixed scapula tracking technique with attached retro-reflective markers was used. High intra-participant repeatability was observed: mean coefficients of multiple correlations of 0.87-1.00 in humerothoracic rotations and 0.77-0.90 for scapulothoracic rotations. Standard deviations of hand force was low: kinematics were observed between the pull-up techniques. The reverse technique has extreme glenohumeral internal-external rotation and large deviation from the scapula plane. The wide technique has a reduced range of pro/retraction in the same HT plane of elevation and 90° of arm abduction with 45° external rotation was observed. All these factors suggest increased sub-acromial impingement risk. The scapula tracking technique showed high repeatability. High arm elevation during pull-ups reduces sub-acromial space and increases pressure, increasing the risk of impingement injury. Wide and reverse pull-ups demonstrate kinematics patterns linked with increased impingement risk. Weight-assisted front pull-ups require further investigation and could be recommended for weaker participants. Copyright © 2015 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

Elevated voltage level I{sub DDQ} failure testing of integrated circuits

Science.gov (United States)

Righter, A.W.

1996-05-21

Burn in testing of static CMOS IC`s is eliminated by I{sub DDQ} testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip. 4 figs.

Closed-form solution for static pull-in voltage of electrostatically actuated clamped-clamped micro/nano beams under the effect of fringing field and van der Waals force

Science.gov (United States)

Bhojawala, V. M.; Vakharia, D. P.

2017-12-01

This investigation provides an accurate prediction of static pull-in voltage for clamped-clamped micro/nano beams based on distributed model. The Euler-Bernoulli beam theory is used adapting geometric non-linearity of beam, internal (residual) stress, van der Waals force, distributed electrostatic force and fringing field effects for deriving governing differential equation. The Galerkin discretisation method is used to make reduced-order model of the governing differential equation. A regime plot is presented in the current work for determining the number of modes required in reduced-order model to obtain completely converged pull-in voltage for micro/nano beams. A closed-form relation is developed based on the relationship obtained from curve fitting of pull-in instability plots and subsequent non-linear regression for the proposed relation. The output of regression analysis provides Chi-square (χ 2) tolerance value equals to 1  ×  10-9, adjusted R-square value equals to 0.999 29 and P-value equals to zero, these statistical parameters indicate the convergence of non-linear fit, accuracy of fitted data and significance of the proposed model respectively. The closed-form equation is validated using available data of experimental and numerical results. The relative maximum error of 4.08% in comparison to several available experimental and numerical data proves the reliability of the proposed closed-form equation.

Control model design to limit DC-link voltage during grid fault in a dfig variable speed wind turbine

Science.gov (United States)

Nwosu, Cajethan M.; Ogbuka, Cosmas U.; Oti, Stephen E.

2017-08-01

This paper presents a control model design capable of inhibiting the phenomenal rise in the DC-link voltage during grid- fault condition in a variable speed wind turbine. Against the use of power circuit protection strategies with inherent limitations in fault ride-through capability, a control circuit algorithm capable of limiting the DC-link voltage rise which in turn bears dynamics that has direct influence on the characteristics of the rotor voltage especially during grid faults is here proposed. The model results so obtained compare favorably with the simulation results as obtained in a MATLAB/SIMULINK environment. The generated model may therefore be used to predict near accurately the nature of DC-link voltage variations during fault given some factors which include speed and speed mode of operation, the value of damping resistor relative to half the product of inner loop current control bandwidth and the filter inductance.

Filtering and Control of High Speed Motor Current in a Flywheel Energy Storage System

Science.gov (United States)

Kenny, Barbara H.; Santiago, Walter

2004-01-01

The NASA Glenn Research Center has been developing technology to enable the use of high speed flywheel energy storage units in future spacecraft for the last several years. An integral part of the flywheel unit is the three phase motor/generator that is used to accelerate and decelerate the flywheel. The motor/generator voltage is supplied from a pulse width modulated (PWM) inverter operating from a fixed DC voltage supply. The motor current is regulated through a closed loop current control that commands the necessary voltage from the inverter to achieve the desired current. The current regulation loop is the innermost control loop of the overall flywheel system and, as a result, must be fast and accurate over the entire operating speed range (20,000 to 60,000 rpm) of the flywheel. The voltage applied to the motor is a high frequency PWM version of the DC bus voltage that results in the commanded fundamental value plus higher order harmonics. Most of the harmonic content is at the switching frequency and above. The higher order harmonics cause a rapid change in voltage to be applied to the motor that can result in large voltage stresses across the motor windings. In addition, the high frequency content in the motor causes sensor noise in the magnetic bearings that leads to disturbances for the bearing control. To alleviate these problems, a filter is used to present a more sinusoidal voltage to the motor/generator. However, the filter adds additional dynamics and phase lag to the motor system that can interfere with the performance of the current regulator. This paper will discuss the tuning methodology and results for the motor/generator current regulator and the impact of the filter on the control. Results at speeds up to 50,000 rpm are presented.

Improved cycling performance of Li{sub 2}MoO{sub 4}-inlaid LiNi{sub 0.5}Co{sub 0.2}Mn{sub 0.3}O{sub 2} cathode materials for lithium-ion battery under high cutoff voltage

Energy Technology Data Exchange (ETDEWEB)

Zhang, Manfang; Hu, Guorong; Liang, Longwei; Peng, Zhongdong; Du, Ke; Cao, Yanbing, E-mail: cybcsu@csu.edu.cn

2016-07-15

Uniform spherical xLi{sub 2}MoO{sub 4}-inlaid LiNi{sub 0.5}Co{sub 0.2}Mn{sub 0.3}O{sub 2} materials were successfully prepared through a solid state synthesis. To investigate the material characterization and electrochemical performance after Li{sub 2}MoO{sub 4} modification, X-ray diffraction (XRD), Rietveld refinement, scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) mapping, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and electrochemical tests were applied. The results of the XRD, Rietveld refinement, SEM and EDS analyses showed that a Mo atom may be incorporated into the crystal lattice of the layer structure. Moreover, the presence of Li{sub 2}MoO{sub 4} on the LiNi{sub 0.5}Co{sub 0.2}Mn{sub 0.3}O{sub 2} surface was observed. The thickness of the Li{sub 2}MoO{sub 4} coating layer on the xLi{sub 2}MoO{sub 4}-inlaid LiNi{sub 0.5}Co{sub 0.2}Mn{sub 0.3}O{sub 2} material (x = 0.02) was approximately 25 nm. Similarly, XPS was performed to determine the effect of Li{sub 2}MoO{sub 4} modification, confirming the presence of Li{sub 2}MoO{sub 4}. The xLi{sub 2}MoO{sub 4}-inlaid (x = 0.02) LiNi{sub 0.5}Co{sub 0.2}Mn{sub 0.3}O{sub 2} materials exhibited a retention capacity 83.5% higher than that of the bare material (40.9%) after 200 cycles at 0.5 C between 3.0 and 4.4 V, and it also exhibited the best electrochemical properties at a cutoff voltage of 4.5 V. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) confirmed that the modification of Li{sub 2}MoO{sub 4} plays an important role in improving the electrochemical performance of pristine LiNi{sub 0.5}Co{sub 0.2}Mn{sub 0.3}O{sub 2}. - Highlights: • Electrochemical performance of LiNi{sub 0.5}Co{sub 0.2}Mn{sub 0.3}O{sub 2} is improved by Li{sub 2}MoO{sub 4} modification. • Li{sub 2}MoO{sub 4} modification can make the structure of the bare material stable. • Li{sub 2}MoO{sub 4}-inlaid Li[Ni{sub 0.5}Co{sub 0.2}Mn{sub 0.3}]O{sub 2

Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2016-01-01

: off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

High-voltage variable-duration pulse generator

International Nuclear Information System (INIS)

Anisimova, T.E.; Akkuratov, E.V.; Gromovenko, V.M.; Nikonov, Yu.P.; Malinin, A.N.

1988-01-01

A high-voltage generator is described that allows pulse duration tau to be varied within wide limits and has high efficiency (at least 50% for tau = 0.5 tau/sub max/) and an amplitude of up to 5 kV, a repetition frequency of up to 200 Hz,and a variable duration of 0-30 μsec. The generator is used in the controller of an electron accelerator

System for high-voltage control detectors with large number photomultipliers

International Nuclear Information System (INIS)

Donskov, S.V.; Kachanov, V.A.; Mikhajlov, Yu.V.

1985-01-01

A simple and inexpensive on-line system for hihg-voltage control which is designed for detectors with a large number of photomultipliers is developed and manufactured. It has been developed for the GAMC type hodoscopic electromagnetic calorimeters, comprising up to 4 thousand photomultipliers. High voltage variation is performed by a high-speed potentiometer which is rotated by a microengine. Block-diagrams of computer control electronics are presented. The high-voltage control system has been used for five years in the IHEP and CERN accelerator experiments. The operation experience has shown that it is quite simple and convenient in operation. In case of about 6 thousand controlled channels in both experiments no potentiometer and microengines failures were observed

Energy Efficient Control of High Speed IPMSM Drives - A Generalized PSO Approach

Directory of Open Access Journals (Sweden)

GECIC, M.

2016-02-01

Full Text Available In this paper, a generalized particle swarm optimization (GPSO algorithm was applied to the problems of optimal control of high speed low cost interior permanent magnet motor (IPMSM drives. In order to minimize the total controllable electrical losses and to increase the efficiency, the optimum current vector references are calculated offline based on GPSO for the wide speed range and for different load conditions. The voltage and current limits of the drive system and the variation of stator inductances are all included in the optimization method. The stored optimal current vector references are used during the real time control and the proposed algorithm is compared with the conventional high speed control algorithm, which is mostly voltage limit based. The computer simulations and experimental results on 1 kW low cost high speed IPMSM drive are discussed in details.

Dynamic Range Enhancement of High-Speed Electrical Signal Data via Non-Linear Compression

Science.gov (United States)

Laun, Matthew C. (Inventor)

2016-01-01

Systems and methods for high-speed compression of dynamic electrical signal waveforms to extend the measuring capabilities of conventional measuring devices such as oscilloscopes and high-speed data acquisition systems are discussed. Transfer function components and algorithmic transfer functions can be used to accurately measure signals that are within the frequency bandwidth but beyond the voltage range and voltage resolution capabilities of the measuring device.

Giant magnetoimpedance intrinsic impedance and voltage sensitivity of rapidly solidified Co{sub 66}Fe{sub 2}Cr{sub 4}Si{sub 13}B{sub 15} amorphous wire for highly sensitive sensors applications

Energy Technology Data Exchange (ETDEWEB)

Das, Tarun K.; Mandal, Sushil K. [CSIR - National Metallurgical Laboratory, NDE and Magnetic Materials Group, MST Division, Jamshedpur (India); Banerji, Pallab [Indian Institute of Technology, Kharagpur, Materials Science Centre, Kharagpur (India)

2016-11-15

We report a systematic study of the influence of wire length, L, dependence of giant magneto-impedance (GMI) sensitivity of Co{sub 66}Fe{sub 2}Cr{sub 4}Si{sub 13}B{sub 15} soft magnetic amorphous wire of diameter ∝ 100 μm developed by in-water quenching technique. The magnetization behaviour (hysteresis loops) of the wire with different length (L = 1, 2, 3, 5, 8 and 10 cm) has been evaluated by fuxmetric induction method. It was observed that the behaviour of the hysteresis loops change drastically with the wire length, being attributed to the existence of a critical length, L{sub C}, found to be around 3 cm. GMI measurements have been taken using automated GMI measurement system and the GMI sensitivities in terms of intrinsic impedance sensitivity (S{sub Ω/Am}{sup -1}) and voltage sensitivity (S{sub V/Am}{sup -1}) of the wire have been evaluated under optimal bias field and excitation current. It was found that the maximum (S{sub Ω/Am}{sup -1}){sub max} ∼ 0.63 Ω/kAm{sup -1}/cm and (S{sub V/Am}{sup -1}){sub max} ∼ 3.10 V/kAm{sup -1}/cm were achieved at a critical length L{sub C} ∝ 3 cm of the wire for an AC current of 5 mA and a frequency of 5 MHz. These findings provide crucial insights for optimization of the geometrical dimensions of magnetic sensing elements and important practical guidance for designing high sensitive GMI sensors. The relevant combinations of magnetic material parameters and operating conditions that optimize the sensitivity are highlighted. (orig.)

High voltage systems

International Nuclear Information System (INIS)

Martin, M.

1991-01-01

Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co{sub 3}O{sub 4}-PVA/p-Si structures

Energy Technology Data Exchange (ETDEWEB)

Bilkan, Çiğdem, E-mail: cigdembilkan@gmail.com [Department of Physics, Faculty of Sciences, The University of Çankırı Karatekin, 18100 Çankırı (Turkey); Azizian-Kalandaragh, Yashar [Department of Physics, Faculty of Science, The University of Mohaghegh Ardabili, Ardabil (Iran, Islamic Republic of); Altındal, Şemsettin [Department of Physics, Faculty of Sciences, The University of Gazi, 06500 Ankara (Turkey); Shokrani-Havigh, Roya [Department of Physics, Faculty of Science, The University of Mohaghegh Ardabili, Ardabil (Iran, Islamic Republic of)

2016-11-01

In this research a simple microwave-assisted method have been used for preparation of cobalt oxide nanostructures. The as-prepared sample has been investigated by UV–vis spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM). On the other hand, frequency and voltage dependence of both the real and imaginary parts of dielectric constants (ε′, ε″) and electric modulus (M′ and M″), loss tangent (tanδ), and ac electrical conductivity (σ{sub ac}) values of Al/Co{sub 3}O{sub 4}-PVA/p-Si structures were obtained in the wide range of frequency and voltage using capacitance (C) and conductance (G/ω) data at room temperature. The values of ε′, ε″ and tanδ were found to decrease with increasing frequency almost for each applied bias voltage, but the changes in these parameters become more effective in the depletion region at low frequencies due to the charges at surface states and their relaxation time and polarization effect. While the value of σ is almost constant at low frequency, increases almost as exponentially at high frequency which are corresponding to σ{sub dc} and σ{sub ac}, respectively. The M′ and M″ have low values at low frequencies region and then an increase with frequency due to short-range mobility of charge carriers. While the value of M′ increase with increasing frequency, the value of M″ shows two peak and the peaks positions shifts to higher frequency with increasing applied voltage due to the decrease of the polarization and N{sub ss} effects with increasing frequency.

High-speed, random-access fluorescence microscopy: I. High-resolution optical recording with voltage-sensitive dyes and ion indicators.

Science.gov (United States)

Bullen, A; Patel, S S; Saggau, P

1997-07-01

The design and implementation of a high-speed, random-access, laser-scanning fluorescence microscope configured to record fast physiological signals from small neuronal structures with high spatiotemporal resolution is presented. The laser-scanning capability of this nonimaging microscope is provided by two orthogonal acousto-optic deflectors under computer control. Each scanning point can be randomly accessed and has a positioning time of 3-5 microseconds. Sampling time is also computer-controlled and can be varied to maximize the signal-to-noise ratio. Acquisition rates up to 200k samples/s at 16-bit digitizing resolution are possible. The spatial resolution of this instrument is determined by the minimal spot size at the level of the preparation (i.e., 2-7 microns). Scanning points are selected interactively from a reference image collected with differential interference contrast optics and a video camera. Frame rates up to 5 kHz are easily attainable. Intrinsic variations in laser light intensity and scanning spot brightness are overcome by an on-line signal-processing scheme. Representative records obtained with this instrument by using voltage-sensitive dyes and calcium indicators demonstrate the ability to make fast, high-fidelity measurements of membrane potential and intracellular calcium at high spatial resolution (2 microns) without any temporal averaging.

Voltage sag influence on fatigue life of the drivetrain of fixed speed wind turbines

DEFF Research Database (Denmark)

Veluri, Badrinath; Santos-Martin, David; Jensen, Henrik Myhre

2011-01-01

Occurrence of voltage sags due to electrical grid faults and other network disturbances generate transients of the generator electromagnetic torque which result in significant high stresses and noticeable vibrations for the wind turbine mechanical system and may also have a detrimental effect...... on the fatigue life of important drivetrain components. The high penetration of wind energy in the electrical grids demands new requirements for the operation of wind energy conversion systems. Although fixed speed wind turbine technology is nowadays replaced by variable speed wind turbines. In some countries...... by the stator flux oscillations which cause high transients of the generator electromagnetic torque. This paper focuses in estimating the resulting significant stresses transients due to the electromagnetic torque transients, which transmits to the wind turbine mechanical system that may have a detrimental...

Full-frame, high-speed 3D shape and deformation measurements using stereo-digital image correlation and a single color high-speed camera

Science.gov (United States)

Yu, Liping; Pan, Bing

2017-08-01

Full-frame, high-speed 3D shape and deformation measurement using stereo-digital image correlation (stereo-DIC) technique and a single high-speed color camera is proposed. With the aid of a skillfully designed pseudo stereo-imaging apparatus, color images of a test object surface, composed of blue and red channel images from two different optical paths, are recorded by a high-speed color CMOS camera. The recorded color images can be separated into red and blue channel sub-images using a simple but effective color crosstalk correction method. These separated blue and red channel sub-images are processed by regular stereo-DIC method to retrieve full-field 3D shape and deformation on the test object surface. Compared with existing two-camera high-speed stereo-DIC or four-mirror-adapter-assisted singe-camera high-speed stereo-DIC, the proposed single-camera high-speed stereo-DIC technique offers prominent advantages of full-frame measurements using a single high-speed camera but without sacrificing its spatial resolution. Two real experiments, including shape measurement of a curved surface and vibration measurement of a Chinese double-side drum, demonstrated the effectiveness and accuracy of the proposed technique.

High-speed nonvolatile CMOS/MNOS RAM

International Nuclear Information System (INIS)

Derbenwick, G.F.; Dodson, W.D.; Sokel, R.J.

1979-01-01

A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si 3 N 4 insulator deposited at 750 0 C. Read cycle times less than 350 ns and write cycle times of 1 μs are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected

Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

Energy Technology Data Exchange (ETDEWEB)

Sogabe, Tomah, E-mail: Sogabe@mbe.rcast.u-tokyo.ac.jp; Ogura, Akio; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan)

2014-02-21

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V{sub bias} measurements. The profile of SR−V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

High speed auto-charging system for condenser bank

International Nuclear Information System (INIS)

Mizuno, Yasunori; Bito, Fumio; Fujita, Kazuhiko; Sometani, Taro

1987-01-01

A current-control type high-speed charging system, which is intended for auto-charging of the condenser bank, is developed. Moreover, the system can also serve to compensate the current leakage from the condenser bank so that the charged voltage can be kept constant. The system consists of a sequence circuit, a charging current control circuit (or auto-charging circuit) and a charging circuit. The auto-charging circuit is characterized by the use of a triac to control the current. The current, controlled by the circuit, is supplied to the condenser bank through a step-up transformer and voltage doubler rectifier circuit. It is demonstrated that the use of the high-speed auto-charging circuit can largely decrease the required charging time, compared to constant voltage charging. In addition, the compensation function is shown to serve effectively for maintaining a constant voltage after the completion of charging. The required charging time is decreases as the charging current increases. The maximum charging current is decided by the rating of the traic and the current rating of the rectifier diode in the secondary circuit. Major components of these circuits have decreased impedances to minimize the effect of noise, so that the possibility of an accident can be eliminated. Other various improvements are made in the grounding circuit and the charging protection circuit in order to ensure safety. (Nogami, K.)

Stability of high current diode under 100-nanosecond-pulse voltage

International Nuclear Information System (INIS)

Lai Dingguo; Qiu Aici; Zhang Yongmin; Huang Jianjun; Ren Shuqing; Yang Li

2012-01-01

Stability of high current diode under pulse voltage with 80 ns and 34 ns rise time was studied on the flash Ⅱ accelerator. Influence of rise time of diode voltage on startup time and cathode emission uniformity and repeatability of diode impedance was analyzed by comparing the experimental results with numerically simulated results, and the influence mechanism was discussed. The startup time of diode increases with the increasing of rise time of voltage, and the repeatability of diode impedance decreases. Discal plane cathode is prone to emit rays intensely in the center area, the time that plasma covers the surface of the cathode increases and the shielding effect has more impact on cathode emission according to the increase of rise time. Local intense emission on the cathode increases expansion speed of plasma and reduces the effective emission area. The stability of characteristic impedance of diode under a pulse voltage with slow rise time is decreased by the combined action of expansion speed of plasma and the effective emission area. (authors)

Improved open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cells with high work function transparent electrodes

Energy Technology Data Exchange (ETDEWEB)

Jäger, Timo, E-mail: timo.jaeger@empa.ch; Romanyuk, Yaroslav E.; Bissig, Benjamin; Pianezzi, Fabian; Nishiwaki, Shiro; Reinhard, Patrick; Steinhauser, Jérôme; Tiwari, Ayodhya N. [Empa—Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, Überlandstrasse 129, 8600 Dübendorf (Switzerland); Schwenk, Johannes [Empa—Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Nanoscale Materials Science, Überlandstrasse 129, 8600 Dübendorf (Switzerland)

2015-06-14

Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se{sub 2} (CIGS) solar cells, leading to an open circuit voltage V{sub OC} enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced V{sub OC}. Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase in V{sub OC}. Two possible explanations are proposed and verified by one-dimensional simulations using the SCAPS software. First, a higher work function of IOH as compared to AZO is simulated to yield an V{sub OC} increase by 21 mV. Second, a lower defect density in the i-ZnO layer as a result of the reduced sputter damage during milder sputter-deposition of IOH can also add to a maximum enhanced V{sub OC} of 25 mV. Our results demonstrate that the proper choice of the front TCO contact can reduce the parasitic recombination and boost the efficiency of CIGS cells with improved corrosion stability.

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

Energy Technology Data Exchange (ETDEWEB)

Erofeev, E. V., E-mail: erofeev@micran.ru [Tomsk State University of Control Systems and Radioelectronics, Research Institute of Electrical-Communication Systems (Russian Federation); Fedin, I. V.; Kutkov, I. V. [Research and Production Company “Micran” (Russian Federation); Yuryev, Yu. N. [National Research Tomsk Polytechnic University, Institute of Physics and Technology (Russian Federation)

2017-02-15

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

High voltage engineering

CERN Document Server

Rizk, Farouk AM

2014-01-01

Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

Energy Technology Data Exchange (ETDEWEB)

Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de; Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Bertaud, T.; Walczyk, C.; Calka, P. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-08-18

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

Reliability of supply of switchgear for auxiliary low voltage in substations extra high voltage to high voltage

Directory of Open Access Journals (Sweden)

Perić Dragoslav M.

2015-01-01

Full Text Available Switchgear for auxiliary low voltage in substations (SS of extra high voltages (EHV to high voltage (HV - SS EHV/HV kV/kV is of special interest for the functioning of these important SS, as it provides a supply for system of protection and other vital functions of SS. The article addresses several characteristic examples involving MV lines with varying degrees of independence of their supply, and the possible application of direct transformation EHV/LV through special voltage transformers. Auxiliary sources such as inverters and diesel generators, which have limited power and expensive energy, are also used for the supply of switchgear for auxiliary low voltage. Corresponding reliability indices are calculated for all examples including mean expected annual engagement of diesel generators. The applicability of certain solutions of switchgear for auxiliary low voltage SS EHV/HV, taking into account their reliability, feasibility and cost-effectiveness is analyzed too. In particular, the analysis of applications of direct transformation EHV/LV for supply of switchgear for auxiliary low voltage, for both new and existing SS EHV/HV.

Twenty years of high-speed lines in Spain; Zwanzig Jahre Hochgeschwindigkeitsstrecken in Spanien

Energy Technology Data Exchange (ETDEWEB)

Vega Vega, Tomas [ADIF, Madrid (Spain); Gil Ortiz, Jose Miguel [Balfour Beatty Rail Iberica, Alcobendas (Spain)

2012-07-15

In April 1992, i.e. 20 years ago, fast train services started in Spain when high-speed trains were put into operation on the almost 500 km long Madrid-Cordoba-Sevilla railway line. Both the 1,435 mm UIC standard gauge and the 1 AC 25 kV 50 Hz overhead line voltage level meant a big step in the development. Today the Spanish high-speed network covers some 2,200 km of railway line, and more lines are planned or already under construction. (orig.)

Push and pull factors determing wine tourism development in the 'Tri Morave' sub-region

Directory of Open Access Journals (Sweden)

Jovanović-Tončev Melita

2016-01-01

Full Text Available The subject of this paper are the factors affecting the decision of wine tourists to take a trip to a particular destination. These factors can be divided into internal (push and external (pull factors. The purpose of this study is to determine the development potential as well as the factors that influence participation in wine tourism in Tri Morave sub-region. In order to do that, two researches were conducted: one on the offer side and another on the demand side. Based on the results of the survey on the offer side, one can conclude that Tri Morave sub-region abounds in natural and anthropological resources that should be turned into an integrated wine product. On the other hand, research concerning tourist demand was conducted by polling winery visitors. The obtained data confirms assumptions about the appearance of modern tourists seeking authentic experience, satisfaction of hedonistic needs, and enjoyment of high-quality wine and food. Based on the results of the survey, the purchase of wine and wine tasting are the highest ranked benefits that tourists expect from visits to wineries. The application of Spearman's correlation coefficient points to statistically significant correlation between respondents, who referred to tasting, wine purchase, and authentic tourist experience as the basic motives of their visit, and future behavior of tourists in terms of revisiting and recommendations of the given wine destination to friends.

Voltage-controlled ferromagnetism and magnetoresistance in LaCoO{sub 3}/SrTiO{sub 3} heterostructures

Energy Technology Data Exchange (ETDEWEB)

Hu, Chengqing; Park, Keun Woo; Yu, Edward T. [Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, 1 University Station C1600, Austin, Texas 78712 (United States); Jordan-Sweet, Jean L. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

2013-11-14

A LaCoO{sub 3}/SrTiO{sub 3} heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO{sub 3}, leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO{sub 3} layer on strain. Below the Curie temperature of the LaCoO{sub 3} layer, this effect leads to modulation of resistance in LaCoO{sub 3} as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO{sub 3}. Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO{sub 3} layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO{sub 3} grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device.

Model predictive control of a high speed switched reluctance generator system

NARCIS (Netherlands)

Marinkov, Sava; De Jager, Bram; Steinbuch, Maarten

2013-01-01

This paper presents a novel voltage control strategy for the high-speed operation of a Switched Reluctance Generator. It uses a linear Model Predictive Control law based on the average system model. The controller computes the DC-link current needed to achieve the tracking of a desired voltage

Utilization technique on variable speed device

International Nuclear Information System (INIS)

1989-12-01

This reports of workshop on power technology describes using technique on variable speed device, which deals with alternating current situation and prospect of current variable speed device, technical trend and prospect of electronics, reduce expenses by variable speed device, control technique, measurement technology, high voltage variable speed device, recent trend of inverter technology, low voltage and high voltage variable speed device control device, operating variable speed device in cooling fan, FDF application and defect case of variable speed device, cooling pump application of water variable transformer, inverter application and energy effect of ventilation equipment, application of variable speed device and analysis of the result of operation and study for application of variable speed technology.

Characterization of Cr-doped Sb{sub 2}Te{sub 3} films and their application to phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Wang, Qing; Xia, Yangyang; Zheng, Yonghui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); University of the Chinese Academy of Sciences, Beijing, 100049 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Liu, Bo; Zhu, Min; Song, Sannian; Lv, Shilong; Cheng, Yan; Song, Zhitang; Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Huo, Ruru [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghaitech University, Shanghai, 200031 (China)

2015-08-15

Phase-change memory (PCM) is regarded as one of the most promising candidates for the next-generation nonvolatile memory. Its storage medium, phase-change material, has attracted continuous exploration. Along the traditional GeTe-Sb{sub 2}Te{sub 3} tie line, the binary compound Sb{sub 2}Te{sub 3} is a high-speed phase-change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb{sub 2}Te{sub 3}, called Cr-Sb{sub 2}Te{sub 3} (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb{sub 2}Te{sub 3} without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST{sub 1}0.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10-year data retention is 120.8 C, which indicates better thermal stability than GST and pure Sb{sub 2}Te{sub 3}. PCM cells based on CST{sub 1}0.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr-Sb{sub 2}Te{sub 3} with suitable composition is a promising novel phase-change material used for PCM with high speed and good thermal stability performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Pulse width modulated push-pull driven parallel resonant converter with active free-wheel

Science.gov (United States)

Reass, William A.; Schrank, Louis

2004-06-22

An apparatus and method for high frequency alternating power generation to control kilowatts of supplied power in microseconds. The present invention includes a means for energy storage, push-pull switching means, control electronics, transformer means, resonant circuitry and means for excess energy recovery, all in electrical communication. A push-pull circuit works synchronously with a force commutated free-wheel transistor to provide current pulses to a transformer. A change in the conduction angle of the push-pull circuit changes the amount of energy coupled into the transformer's secondary oscillating circuit, thereby altering the induced secondary resonating voltage. At the end of each pulse, the force commutated free-wheel transistor causes residual excess energy in the primary circuit to be transmitted back to the storage capacitor for later use.

Temporary over voltages in the high voltage networks

International Nuclear Information System (INIS)

Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

2001-01-01

The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al{sub 2}O{sub 3}/AlGaN/GaN stacks

Energy Technology Data Exchange (ETDEWEB)

Qin, Xiaoye; Lucero, Antonio; Azcatl, Angelica; Kim, Jiyoung; Wallace, Robert M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2014-07-07

We investigate the Al{sub 2}O{sub 3}/AlGaN/GaN metal-oxide-semiconductor structure pretreated by O{sub 2} anneals, N{sub 2} remote plasma, and forming gas remote plasma prior to atomic layer deposition of Al{sub 2}O{sub 3} using in situ X-ray photoelectron spectroscopy, low energy electron diffraction, and capacitance- voltage measurements. Plasma pretreatments reduce the Ga-oxide/oxynitride formation and the interface state density, while inducing a threshold voltage instability.

Characterization and Effects of Fiber Pull-Outs in Hole Quality of Carbon Fiber Reinforced Plastics Composite.

Science.gov (United States)

Alizadeh Ashrafi, Sina; Miller, Peter W; Wandro, Kevin M; Kim, Dave

2016-10-13

Hole quality plays a crucial role in the production of close-tolerance holes utilized in aircraft assembly. Through drilling experiments of carbon fiber-reinforced plastic composites (CFRP), this study investigates the impact of varying drilling feed and speed conditions on fiber pull-out geometries and resulting hole quality parameters. For this study, hole quality parameters include hole size variance, hole roundness, and surface roughness. Fiber pull-out geometries are quantified by using scanning electron microscope (SEM) images of the mechanically-sectioned CFRP-machined holes, to measure pull-out length and depth. Fiber pull-out geometries and the hole quality parameter results are dependent on the drilling feed and spindle speed condition, which determines the forces and undeformed chip thickness during the process. Fiber pull-out geometries influence surface roughness parameters from a surface profilometer, while their effect on other hole quality parameters obtained from a coordinate measuring machine is minimal.

Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

Energy Technology Data Exchange (ETDEWEB)

Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia [State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Shapingba District, Chongqing, 400044 (China); Zahn, Markus [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

2015-09-15

Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticles can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.

Technological Aspects: High Voltage

CERN Document Server

Faircloth, D.C.

2013-12-16

This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

A STATCOM with Supercapacitors for Low-Voltage Ride-Through in Fixed-Speed Wind Turbines

Directory of Open Access Journals (Sweden)

Andrés Felipe Obando-Montaño

2014-09-01

Full Text Available Fixed-speed wind generator (FSWG technology has an important presence in countries where wind energy started to be developed more than a decade ago. This type of technology cannot be directly adapted to the grid codes, for example those requirements related to the immunity level under voltage dips. That behavior is typically referred as low-voltage ride through (LVRT, and it usually implies certain reactive and active power injection requirements, both during a voltage dip and during the voltage recovery. In this context, a review is presented of the LVRT exigencies present in some of the countries with the most advanced grid codes (Denmark, Germany, Spain and the United Kingdom. In this paper, the capabilities of STATCOM-based devices for fulfilling the LVRT requirements in FSWGs are analyzed. For this purpose, two technologies are considered: a STATCOM with a supercapacitor, which improves its energy storage features; and a STATCOM with a supercapacitor and a DC-DC converter, to achieve higher discharge levels.

High Tensile Strength of Engineered β-Solenoid Fibrils via Sonication and Pulling.

Science.gov (United States)

Peng, Zeyu; Parker, Amanda S; Peralta, Maria D R; Ravikumar, Krishnakumar M; Cox, Daniel L; Toney, Michael D

2017-11-07

We present estimates of ultimate tensile strength (UTS) for two engineered β-solenoid protein mutant fibril structures (spruce budworm and Rhagium inquisitor antifreeze proteins) derived from sonication-based measurements and from force pulling molecular dynamics simulations, both in water. Sonication experiments generate limiting scissioned fibrils with a well-defined length-to-width correlation for the mutant spruce budworm protein and the resultant UTS estimate is 0.66 ± 0.08 GPa. For fibrils formed from engineered R. inquisitor antifreeze protein, depending upon geometry, we estimate UTSs of 3.5 ± 3.2-5.5 ± 5.1 GPa for proteins with interfacial disulfide bonds, and 1.6 ± 1.5-2.5 ± 2.3 GPa for the reduced form. The large error bars for the R. inquisitor structures are intrinsic to the broad distribution of limiting scission lengths. Simulations provide pulling velocity-dependent UTSs increasing from 0.2 to 1 GPa in the available speed range, and 1.5 GPa extrapolated to the speeds expected in the sonication experiments. Simulations yield low-velocity values for the Young's modulus of 6.0 GPa. Without protein optimization, these mechanical parameters are similar to those of spider silk and Kevlar, but in contrast to spider silk, these proteins have a precisely known sequence-structure relationship. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Pulling an intruder from a granular material: a novel depinning experiment

Directory of Open Access Journals (Sweden)

Zhang Yue

2017-01-01

Full Text Available Two-dimensional impact experiments by Clark et al. [2] identified the source of inertial drag to be caused by ‘collisions’ with a latent force network, leading to large fluctuations of the force experienced by the impactor. These collisions provided the major drag on an impacting intruder until the intruder was nearly at rest. As a complement, we consider controlled pull-out experiments where a buried intruder is pulled out of a material, starting from rest. This provides a means to better understand the non-inertial part of the drag force, and to explore the mechanisms associated with the force fluctuations. To some extent, the pull out process is a time reversed version of the impact process. In order to visualize this pulling process, we use 2D photoelastic disks from which circular intruders of different radii are pulled out. We present results about the dynamics of the intruder and the structures of the force chains inside the granular system as captured by slow and high speed imaging.

Technological Aspects: High Voltage

International Nuclear Information System (INIS)

Faircloth, D C

2013-01-01

This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

Prediction of breakdown voltages in novel gases for high voltage insulation

International Nuclear Information System (INIS)

Koch, M.

2015-01-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

Minimum-Voltage Vector Injection Method for Sensorless Control of PMSM for Low-Speed Operations

DEFF Research Database (Denmark)

Xie, Ge; Lu, Kaiyuan; Kumar, Dwivedi Sanjeet

2016-01-01

In this paper, a simple signal injection method is proposed for sensorless control of PMSM at low speed, which ideally requires one voltage vector only for position estimation. The proposed method is easy to implement resulting in low computation burden. No filters are needed for extracting...... may also be further developed to inject two opposite voltage vectors to reduce the effects of inverter voltage error on the position estimation accuracy. The effectiveness of the proposed method is demonstrated by comparing with other sensorless control method. Theoretical analysis and experimental...

Effects of balanced and unbalanced voltage sags on DC adjustable-speed drives

Energy Technology Data Exchange (ETDEWEB)

Pedra, Joaquin; Sainz, Luis; Corcoles, Felipe; Bergas, Joan [Department of Electrical Engineering, ETSEIB-UPC, Av. Diagonal, 647, 08028 Barcelona (Spain); de Blas, Alfredo [Department of Electrical Engineering, EUETIB-UPC, C. d' Urgell, 187, 08036 Barcelona (Spain)

2008-06-15

This paper analyzes the sensitivity of DC adjustable-speed drives to balanced and unbalanced voltage sags. The influence of sag type, depth, duration and phase-angle jump on DC drives is studied. The control of the DC drive has been taken into account to understand drive behavior in the presence of voltage sags. Two working modes of the DC motor are considered in the study: as a consumer load and as a regenerative load. When the DC motor works as a consumer load, the study shows that sag type and depth have a significant influence on drive behavior. However, the voltage sag can be ridden through if the rectifier firing angle is set correctly by the control. When the DC motor works as a regenerative load, the study shows the consequences of the three-phase rectifier commutation failure due to the voltage sag. (author)

Design of very high speed electric generators

International Nuclear Information System (INIS)

Labollita, Santiago

2008-01-01

This work approaches the design process of an electric generator suitable for running efficiently at high speed, driven by a turbo shaft.The axial flux concept was used.For the mechanical design of the prototype, cooling capacity and mounting method were considered, looking for simplicity of the parts evolved. Neodymium-iron-boron permanent magnets were used as magnetic source.For the electrical design, a calculation tool was developed in order to predict the prototype electrical parameters and optimize its geometry.The goal was to obtain 1 kW of electric power at a speed of 100,000 rpm.The efficiency and electrical behaviour of the prototype were characterized at speeds between 2,000 rpm and 30,000 rpm and then the behaviour at the design condition was predicted by obtaining an equivalent electric circuit.The estimated load voltage was 237 V as well as an electrical efficiency of 95%.Eddy current effects were not recognized. Increase of the internal resistance and decree of inductance were observed while raising the electric frequency.Finally, an electronic system was developed in order to use the prototype as a c.c. motor. Global performance was measured according to different supply characteristic. An optimum supply voltage was found.A maximum efficiency of 63% was reached. [es

A comparative study of charge trapping in HfO{sub 2}/Al{sub 2}O{sub 3} and ZrO{sub 2}/Al{sub 2}O{sub 3} based multilayered metal/high-k/oxide/Si structures

Energy Technology Data Exchange (ETDEWEB)

Spassov, D., E-mail: d_spassov@abv.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Skeparovski, A. [Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje (Macedonia, The Former Yugoslav Republic of); Paskaleva, A. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Novkovski, N. [Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje (Macedonia, The Former Yugoslav Republic of)

2016-09-01

The electrical properties of multilayered HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2}/SiO{sub 2} and ZrO{sub 2}/Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} metal-oxide semiconductor capacitors were investigated in order to evaluate the possibility of their application in charge-trapping non-volatile memory devices. The stacks were deposited by reactive radiofrequency magnetron sputtering on Si substrates with thermal SiO{sub 2} with a thickness ranging from 2 to 5 nm. Both types of stacks show negative initial oxide charge and its density is higher for HfO{sub 2}-based structures. Memory window up to 6V at sweeping voltage range of ± 16V was obtained for HfO{sub 2}-based stacks. The hysteresis in these structures is mainly due to a trapping of electrons injected from the Si substrate. The charge-trapping properties of ZrO{sub 2}-based samples are compromised by the high leakage currents and the dielectric breakdown. The conduction through the capacitors at low applied voltages results from hopping of thermally excited electrons from one isolated state to another. The energy depth of the traps participating in the hopping conduction was determined as ~ 0.7 eV for the HfO{sub 2}-based layers and ~ 0.6 eV for ZrO{sub 2}-based ones, originating from negatively charged oxygen vacancies. At high electric fields, the current voltage characteristics were interpreted in terms of space charge limited currents, Fowler–Nordheim tunneling, Schottky emission, and Poole–Frenkel mechanism. The charge retention characteristics do not depend on the thickness of the tunnel SiO{sub 2}. - Highlights: • Sputtered HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2} and ZrO{sub 2}/Al{sub 2}O{sub 3}/ZrO{sub 2} charge-trapping layers were studied. • HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2} stacks show memory window up to 6 V and good retention times. • Negatively charged oxygen vacancies were identified as main defects in the stacks. • Electrical breakdown compromise the charge-trapping properties

A High-Efficiency Voltage Equalization Scheme for Supercapacitor Energy Storage System in Renewable Generation Applications

Directory of Open Access Journals (Sweden)

Liran Li

2016-06-01

Full Text Available Due to its fast charge and discharge rate, a supercapacitor-based energy storage system is especially suitable for power smoothing in renewable energy generation applications. Voltage equalization is essential for series-connected supercapacitors in an energy storage system, because it supports the system’s sustainability and maximizes the available cell energy. In this paper, we present a high-efficiency voltage equalization scheme for supercapacitor energy storage systems in renewable generation applications. We propose an improved isolated converter topology that uses a multi-winding transformer. An improved push-pull forward circuit is applied on the primary side of the transformer. A coupling inductor is added on the primary side to allow the switches to operate under the zero-voltage switching (ZVS condition, which reduces switching losses. The diodes in the rectifier are replaced with metal-oxide-semiconductor field-effect transistors (MOSFETs to reduce the power dissipation of the secondary side. In order to simplify the control, we designed a controllable rectifying circuit to achieve synchronous rectifying on the secondary side of the transformer. The experimental results verified the effectiveness of the proposed design.

High-performance supercapacitors based on intertwined CNT/V{sub 2}O{sub 5} nanowire nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Chen, Zheng; Shen, Meiqing [School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072 (China); Augustyn, Veronica; Dunn, Bruce [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Wen, Jing; Zhang, Yuewei [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095 (United States); School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072 (China); Lu, Yunfeng [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095 (United States)

2011-02-08

High-performance asymmetric super-capacitors containing thick-film electrodes (over 100 {mu}m thick) made of CNT/V{sub 2}O{sub 5} nanowire composite are designed. The excellent conductivity, high specific capacitance, and a large voltage window of the CNT/V{sub 2}O{sub 5} nanocomposite enable the fabrication of devices with high energy and high power densities. Moreover, the resulting devices exhibit excellent cycling stability. This supercapacitor approach may be attractive for a wide range of device applications. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Tentative type test of a non-invasive high-voltage meter with respect to the quantity of practical peak voltage

International Nuclear Information System (INIS)

Peixoto, J.G.P.; Selbach, H.J.; Kramer, H.M.; Lange, B.

2001-04-01

In Working Group 3 of Sub-committee 62C of the international electrotechnical commission (IEC) a new project is underway [1] with the objective of specifying requirements for the performance characteristics of instruments for the non-invasive measurement of the X-ray tube voltage in diagnostic radiology. In this draft the X-ray tube voltage is specified in terms of the practical peak voltage [2]. The objective of the present work is to perform a tentative type test, based on the ''Requirements for Instruments for Non-invasive Measurements of the X-ray Tube Voltage'' defined in the IEC draft, with a commercially available non-invasive high-voltage meter. The instrument was modified so that the practical peak voltage can be measured. It is shown that the instrument, with the modifications made, is suitable for the non-invasive measurement of the practical peak voltage between 50 kV and 150 kV within the required limits of variation of the response. (orig.)

Speed control at low wind speeds for a variable speed fixed pitch wind turbine

Energy Technology Data Exchange (ETDEWEB)

Rosmin, N.; Watson, S.J.; Tompson, M. [Loughborough Univ., Loughborough, Leicestershire (United Kingdom)

2010-03-09

The maximum power regulation below rated wind speed is regulated by changing the rotor/generator speed at large frequency range in a fixed pitch, variable speed, stall-regulated wind turbine. In order to capture the power at a maximum value the power coefficient is kept at maximum peak point by maintaining the tip speed ratio at its optimum value. The wind industry is moving from stall regulated fixed speed wind turbines to newer improved innovative versions with better reliability. While a stall regulated fixed pitch wind turbine is among the most cost-effective wind turbine on the market, its problems include noise, severe vibrations, high thrust loads and low power efficiency. Therefore, in order to improve such drawbacks, the rotation of the generator speed is made flexible where the rotation can be controlled in variable speed. This paper discussed the development of a simulation model which represented the behaviour of a stall regulated variable speed wind turbine at low wind speed control region by using the closed loop scalar control with adjustable speed drive. The paper provided a description of each sub-model in the wind turbine system and described the scalar control of the induction machine. It was concluded that by using a constant voltage/frequency ratio of the generator's stator side control, the generator speed could be regulated and the generator torque could be controlled to ensure the power coefficient could be maintained close to its maximum value. 38 refs., 1 tab., 10 figs.

Development of DP (Dynamic Positioning) to pull-in sub sea pipelines; Utilizacao de barcos de manuseio de ancoras operando com DP (Dynamic Positioning) para arraste de dutos submarinos

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Manoel H.S. [PETROBRAS S.A., Rio de Janeiro, RJ (Brazil); Galgoul, Elton C. [Suporte Engenharia, Luziania, GO (Brazil)

2004-07-01

Sub sea pipeline construction at oil and gas fields, with high concentration of on-bottom facilities, becomes more difficult when mooring operations and pipeline approach to a congested platform have to be performed. One method that has often been applied in Brazil is the so-called 'DP (Dynamic Positioning) pull-in', where PETROBRAS owned pipelay Barge, BGL-1, is moored away from the congested area, while a DP anchor handler pulls the rigid pipeline from BGL-1 to a target near the platform. The method was conceived to avoid mooring operations near the congested platforms as well as to minimize risks due to the pipeline initiation process. Inside the congested area the initiation with aid of a 'dead-man' anchor on the sea bottom, which would be a more conventional solution, becomes impossible in most cases. This paper will discuss the engineering work required to perform the 'DP pull-in' as well as show the operational steps, from the start-up to the final abandonment of the pipeline initiation head inside the target area. (author)

High voltage test techniques

CERN Document Server

Kind, Dieter

2001-01-01

The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

Adaptive Voltage Control Strategy for Variable-Speed Wind Turbine Connected to a Weak Network

DEFF Research Database (Denmark)

Abulanwar, Elsayed; Hu, Weihao; Chen, Zhe

2016-01-01

and smoothness at the point of connection (POC) in order to maximise the wind power penetration into such networks. Intensive simulation case studies under different network topology and wind speed ranges reveal the effectiveness of the AVC scheme to effectively suppress the POC voltage variations particularly......Significant voltage fluctuations and power quality issues pose considerable constraints on the efficient integration of remotely located wind turbines into weak networks. Besides, 3p oscillations arising from the wind shear and tower shadow effects induce further voltage perturbations during...... continuous operation. This study investigates and analyses the repercussions raised by integrating a doubly-fed induction generator wind turbine into an ac network of different parameters and very weak conditions. An adaptive voltage control (AVC) strategy is proposed to retain voltage constancy...

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

Energy Technology Data Exchange (ETDEWEB)

Bhowmik, R. N., E-mail: rnbhowmik.phy@pondiuni.edu.in; Vijayasri, G. [Department of Physics, Pondicherry University, R.Venkataraman Nagar, Kalapet, Puducherry - 605 014 (India)

2015-06-15

We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

ELECTROMECHANICAL TRANSIENT PROCESSES DURING SUPPLY VOLTAGE CHANGING IN THE SYSTEM OF POLYMER INSULATION COVERING OF THE CURRENT-CARRYING CORE OF ULTRA HIGH VOLTAGE CABLES

Directory of Open Access Journals (Sweden)

V. M. Zolotaryov

2018-04-01

Full Text Available Aim. The article is devoted to the analysis of the electromechanical transient processes in a system of three frequency-controlled electric drives based on asynchronous motors that control current-carrying core motion, as well as to the study of the effect of such processes on the modes applying three-layer polymer insulation to the current-carrying core. Technique. The study was conducted based on the concepts of electromechanics, electromagnetic field theory, mathematical physics, mathematical modeling. Results. A mathematical model has been developed to analyze transients in an electromechanical system consisting of three frequency-controlled electric drives providing current-carrying core motion of ultra-high voltage cables in an inclined extrusion line. The coordination of the electromechanical parameters of the system drives has been carried out and the permissible changes in the supply voltage at the limiting mass while moving current-carrying core of ultra-high voltage cables with applied polymer insulation have been estimated. Scientific novelty. For the first time it is determined that with the limiting mass of the current-carrying core, the electromechanical system allows to stabilize the current-carrying core speed with the required accuracy at short-term decreases in the supply voltage by no more than 27 % of its amplitude value. It is also shown that this system is resistant to short-term increases in voltage by 32 % for 0.2 s. Practical significance. Using the developed model, it is possible to calculate the change in the configuration and speed of the slack current-carrying core when applying polymer insulation, depending on the specific mass of the current-carrying core per unit length, its tension at the bottom, the torque of the traction motor and the supply voltage to achieve stable operation of the system and accurate working of the set parameters.

High voltage nanosecond generator with pulse repetition rate of 1,000 p.p.s.

Energy Technology Data Exchange (ETDEWEB)

Gubanov, V P; Korovin, S D; Stepchenko, A S [High Current Electronics Institute, Tomsk (Russian Federation)

1997-12-31

A compact high voltage nanosecond generator is described with a pulse repetition rate up to 1000 p.p.s. The generator includes a 30-Ohm coaxial forming line charged by a built-in Tesla transformer with a high coupling coefficient, and a high voltage (N{sub 2}) gas gap switch with gas blowing between the electrodes. The maximum forming line charge voltage is 450 kV, the pulse duration is about 4 ns, and its amplitude for a matched load is up to 200 kV. (author). 3 figs., 9 refs.

Pull-in and wrinkling instabilities of electroactive dielectric actuators

International Nuclear Information System (INIS)

De Tommasi, D; Puglisi, G; Zurlo, G; Saccomandi, G

2010-01-01

We propose a model to analyse the insurgence of pull-in and wrinkling failures in electroactive thin films. We take into consideration both cases of voltage and charge control, the role of pre-stretch and the size of activated regions, which are all crucial factors in technological applications of electroactive polymers (EAPs). Based on simple geometrical and material assumptions we deduce an explicit analytical description of these phenomena, allowing a clear physical interpretation of different failure mechanisms such as the occurrence of pull-in and wrinkling. Despite our simple assumptions, the comparison with experiments shows a good qualitative and, interestingly, quantitative agreement. In particular our model shows, in accordance with experiments, the existence of different optimal pre-stretch values, depending on the choice of the actuating parameter of the EAP.

Pull-in and wrinkling instabilities of electroactive dielectric actuators

Energy Technology Data Exchange (ETDEWEB)

De Tommasi, D; Puglisi, G; Zurlo, G [Dipartimento di Ingegneria Civile e Ambientale, Politecnico di Bari, 70125 Bari (Italy); Saccomandi, G [Dipartimento di Ingegneria Industriale, Universita degli Studi di Perugia, 06125 Perugia (Italy)

2010-08-18

We propose a model to analyse the insurgence of pull-in and wrinkling failures in electroactive thin films. We take into consideration both cases of voltage and charge control, the role of pre-stretch and the size of activated regions, which are all crucial factors in technological applications of electroactive polymers (EAPs). Based on simple geometrical and material assumptions we deduce an explicit analytical description of these phenomena, allowing a clear physical interpretation of different failure mechanisms such as the occurrence of pull-in and wrinkling. Despite our simple assumptions, the comparison with experiments shows a good qualitative and, interestingly, quantitative agreement. In particular our model shows, in accordance with experiments, the existence of different optimal pre-stretch values, depending on the choice of the actuating parameter of the EAP.

Advanced Ultra-High Speed Motor for Drilling

Energy Technology Data Exchange (ETDEWEB)

Impact Technologies LLC; University of Texas at Arlington

2007-03-31

full speed 10,000 rpm for every 30.48 cm (12 inches) of power section. Operating conditions are 300 voltage AC at the motor leads. Power voltage losses in the cables/wirelines to the motor(s) are expected to be about 10% for 5000 feet carrying 2 amperes. Higher voltages and better insulators can lower these losses and carry more amperes. Cutting elements for such high tip velocities are currently not available, consequently these motors will not be built at this time. However, 7.62 cm (3 inch) OD, low speed, PMSM radial electric motors based on this project design are being built under a 2006 Oklahoma Center for the Advancement of Science and Technology 'proof of concept' grant.

Electrical transport properties and laser-induced voltage effect in La{sub 0.8}Ca{sub 0.2}MnO{sub 3} epitaxial thin films

Energy Technology Data Exchange (ETDEWEB)

Theingi, Mya [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); University of Yangon, Department of Chemistry, Yangon (Myanmar); Ma, Ji; Zhang, Hui; Cui, Qi; Yi, Jianhong; Chen, Qingming [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China)

2014-03-15

La{sub 0.8}Ca{sub 0.2}MnO{sub 3} (LCMO) thin films about 200 nm thickness were grown on untilted and tilted (5 , 10 and 15 ) LaAlO{sub 3} (100) single crystal substrates by pulsed laser deposition technique. Electrical properties of the epitaxial thin films were studied by conventional four-probe technique and the anisotropic thermoelectric properties of the films grown on the tilted substrates have been investigated by laser-induced voltage (LIV) measurements. X-ray diffraction analysis and atomic force microscopy results show that the prepared LCMO thin films have a single phase and high crystalline quality. The remarkably large temperature coefficient of resistance (TCR) values (above 11 %/K) are observed in the all films. TCR value reaches 18 %/K on the film grown on 10 tilted substrate. The intensity of LIV signals monotonously increases with the tilting angles, and the largest signal is 148 mV with the fast time response 229 ns for the film grown on 15 tilted substrate. (orig.)

A design of high-precision BLDCM drive with bus voltage protection

Science.gov (United States)

Lian, Xuezheng; Wang, Haitao; Xie, Meilin; Huang, Wei; Li, Dawei; Jing, Feng

2017-11-01

In the application of space satellite turntable, the design of balance wheel is very necessary. To solve the acquisition precision of Brushless DC motor speed is low, and the encoder is also more complex, this paper improves the original hall signal measurement methods. Using the logic device to achieve the six frequency multiplication of hall signal, the signal is used as speed feedback to achieve speed closed-loop control and improve the speed stability. At the same time, in order to prevent the E.M.F of BLDC motor to raise the voltage of the bus bar when reversing or braking, and affect the normal operation of other circuit modules, the analog circuit is used to protect the bus bar voltage by the way of energy consumption braking. The experimental results are consistent with the theoretical design, and the rationality and feasibility of the frequency multiplication scheme and bus voltage protection scheme are verified.

Four-quadrant speed control circuit of DC servo motor using integrated voltage control method; Den`atsu sekibunchi seigyo wo mochoiita chokuryu dendoki no shishogen sokudo seigyo

Energy Technology Data Exchange (ETDEWEB)

Okui, H. [Osaka polytechnic College, Osaka (Japan); Irie, H. [Osaka Electro-Communication Univ., Osaka (Japan)

1996-08-20

The Two-Quadrant chopper is constructed by using smoothing reactor in common of the step-down chopper and step-up chopper of the DC chopper. Furthermore, since the circuit connected in bridge type by using these two groups has both of positive and negative voltage from DC source and can supplies the current from positive and negative directions for load, it is called in general as the Four-Quadrant chopper. As the Four-Quadrant chopper may supply and regenerate power, it works as power amplifier with high efficiency. In this paper, the speed control circuit of DC servo motor using Four-Quadrant integrated voltage control circuit is described. The speed control circuit is composed of simple circuits of one adder integrator and four hysteresis comparators. The Four-Quadrant speed control circuit has a DC motor speed feedback loop and a voltage feedback loop which connects with AC, it plays the Four-Quadrant speed control without current inspection. The speed control characteristics with no steady state error over four quadrants may be obtained, changing of the quadrant is smooth and transition response is rapid. 9 refs., 11 figs.

Ultrahigh speed endoscopic optical coherence tomography using micromotor imaging catheter and VCSEL technology.

Science.gov (United States)

Tsai, Tsung-Han; Potsaid, Benjamin; Tao, Yuankai K; Jayaraman, Vijaysekhar; Jiang, James; Heim, Peter J S; Kraus, Martin F; Zhou, Chao; Hornegger, Joachim; Mashimo, Hiroshi; Cable, Alex E; Fujimoto, James G

2013-07-01

We developed a micromotor based miniature catheter with an outer diameter of 3.2 mm for ultrahigh speed endoscopic swept source optical coherence tomography (OCT) using a vertical cavity surface-emitting laser (VCSEL) at a 1 MHz axial scan rate. The micromotor can rotate a micro-prism at several hundred frames per second with less than 5 V drive voltage to provide fast and stable scanning, which is not sensitive to the bending of the catheter. The side-viewing probe can be pulled back to acquire a three-dimensional (3D) data set covering a large area on the specimen. The VCSEL provides a high axial scan rate to support dense sampling under high frame rate operation. Using a high speed data acquisition system, in vivo 3D-OCT imaging in the rabbit GI tract and ex vivo imaging of a human colon specimen with 8 μm axial resolution, 8 μm lateral resolution and 1.2 mm depth range in tissue at a frame rate of 400 fps was demonstrated.

Electrical insulation characteristics of liquid helium under high speed rotating field

International Nuclear Information System (INIS)

Ishii, I.; Fuchino, S.; Okano, M.; Tamada, N.

1996-01-01

Electrical breakdown behavior of liquid helium was investigated under high speed rotating field. In the development of superconducting turbine generator it is essential to get the knowledge of electrical insulation characteristics of liquid helium under high speed rotating field. When the current of the field magnet of a superconducting generator is changed, changing magnetic field generates heat in the conductor and it causes bubbles in the liquid helium around the conductor. The behavior of the bubbles is affected largely by the buoyancy which is generated by the centrifugal force. Electrical breakdown behavior of the liquid helium is strongly dependent on the gas bubbles in the liquid. Electrical breakdown voltage between electrodes was measured in a rotating cryostat with and without heater input for bubble formation. Decrease of the breakdown voltage by the heater power was smaller in the rotating field than that in the non rotating field

Effect of wheel speed and annealing temperature on microstructure and texture evolution of Ni{sub 45}Mn{sub 36.6}In{sub 13.4}Co{sub 5} ribbon

Energy Technology Data Exchange (ETDEWEB)

Feng, Yan, E-mail: yanfeng@nwpu.edu.cn [State Key Laboratory of Solidification Processing Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Chen, Hong [State Key Laboratory of Solidification Processing Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Gao, Li [College of Engineering Science and Technology, Shanghai Ocean University, Shanghai 201306 (China); Wang, Haibo [College of Physics and Electronic Engineering, Taizhou University, Taizhou, Zhejiang 318000 (China); Bian, Xiaohai; Gong, Mingjie [State Key Laboratory of Solidification Processing Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China)

2016-12-15

Ni{sub 45}Mn{sub 36.6}In{sub 13.4}Co{sub 5} magnetic shape memory alloy was successfully produced as preferentially textured ribbon by melting spinning with different wheel speed. X-ray diffraction (XRD) and electron back scatter diffraction (EBSD) were used to study structure and texture evolution of these melt-spun ribbons. The thickness of melt-spun ribbon is 42 μm, 65 μm and 30 μm depending on wheel speed of 1 0 m/s, 15 m/s and 20 m/s, respectively. Density of α fiber texture (〈100〉//ND) vary with wheel speed changes, and is most intensive in the ribbon with wheel speed of 15 m/s. Grains of the ribbons grow after being annealed at 873 K, 973 K, 1073 K and 1173 K, recrystallization was not observed in ribbons after being annealed at 873 K but occurred in ribbons after being annealed at higher temperatures. The α fiber texture becomes weaker to some extent after annealing at different temperatures, due to new recrystallization texture formed at the process of annealing. - Highlights: •Sectional part of shape memory ribbon is firstly investigated by EBSD method. •Thickness and texture of ribbons vary with wheel speed. •Annealing temperature affect texture and microstructure evolution greatly. •Recrystallization textures were observed in ribbons after being annealed.

Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

Energy Technology Data Exchange (ETDEWEB)

Liu, Qi; Li, Yi; Zhang, Yang; Song, You, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Wang, Xizhang, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Hu, Zheng [Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China. High-Tech Research Institute of Nanjing University (Suzhou), Suzhou 215123 (China); Sun, Huabin; Li, Yun, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Shi, Yi [School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093 (China)

2014-08-15

A novel high-κ organometallic lanthanide complex, Eu(tta){sub 3}L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine), is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs). The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μ{sub FET}) of 0.17 cm{sup 2} V{sup −1} s{sup −1}, threshold voltage (V{sub th}) of −0.9 V, on/off current ratio of 5 × 10{sup 3}, and subthreshold slope (SS) of 1.0 V dec{sup −1}, which is much better than that of devices obtained on conventional 300 nm SiO{sub 2} substrate (0.13 cm{sup 2} V{sup −1} s{sup −1}, −7.3 V and 3.1 V dec{sup −1} for μ{sub FET}, V{sub th} and SS value when operated at −30 V). These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

A New High Frequency Injection Method Based on Duty Cycle Shifting without Maximum Voltage Magnitude Loss

DEFF Research Database (Denmark)

Wang, Dong; Lu, Kaiyuan; Rasmussen, Peter Omand

2015-01-01

The conventional high frequency signal injection method is to superimpose a high frequency voltage signal to the commanded stator voltage before space vector modulation. Therefore, the magnitude of the voltage used for machine torque production is limited. In this paper, a new high frequency...... amplitude. This may be utilized to develop new position estimation algorithm without involving the inductance in the medium to high speed range. As an application example, a developed inductance independent position estimation algorithm using the proposed high frequency injection method is applied to drive...... injection method, in which high frequency signal is generated by shifting the duty cycle between two neighboring switching periods, is proposed. This method allows injecting a high frequency signal at half of the switching frequency without the necessity to sacrifice the machine fundamental voltage...

The influence of the inverter switching frequency on rotor losses in high-speed permanent magnet machines : an experimental study

NARCIS (Netherlands)

Merdzan, M.; Paulides, J. J H; Borisavljevic, A.; Lomonova, E. A.

2016-01-01

Harmonic content of the output voltage of pulse width modulated voltage source inverters (PWM VSI) is determined by the switching frequency. On the other hand, rotor losses in high-speed permanent magnet (PM) machines are caused, among other factors, by harmonics in stator currents. These harmonics

Heparin/heparan sulfates bind to and modulate neuronal L-type (Cav1.2) voltage-dependent Ca²⁺ channels

DEFF Research Database (Denmark)

Garau, Gianpiero; Magotti, Paola; Heine, Martin

2015-01-01

Our previous studies revealed that L-type voltage-dependent Ca2+ channels (Cav1.2 L-VDCCs) are modulated by the neural extracellular matrix backbone, polyanionic glycan hyaluronic acid. Here we used isothermal titration calorimetry and screened a set of peptides derived from the extracellular......M), integrating their enthalpic and entropic binding contributions. Interaction between heparin and recombinant as well as native full-length neuronal Cav1.2α1 channels was confirmed using the heparin–agarose pull down assay. Whole cell patch clamp recordings in HEK293 cells transfected with neuronal Cav1.......2 channels revealed that enzymatic digestion of highly sulfated heparan sulfates with heparinase 1 affects neither voltage-dependence of channel activation nor the level of steady state inactivation, but did speed up channel inactivation. Treatment of hippocampal cultures with heparinase 1 reduced the firing...

Process techniques of charge transfer time reduction for high speed CMOS image sensors

International Nuclear Information System (INIS)

Cao Zhongxiang; Li Quanliang; Han Ye; Qin Qi; Feng Peng; Liu Liyuan; Wu Nanjian

2014-01-01

This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodiode (PPD) and the voltage difference between the PPD and the floating diffusion (FD) node by controlling and optimizing the N doping concentration in the PPD and the threshold voltage of the reset transistor, respectively. The techniques shorten the charge transfer time from the PPD diode to the FD node effectively. The proposed process techniques do not need extra masks and do not cause harm to the fill factor. A sub array of 32 × 64 pixels was designed and implemented in the 0.18 μm CIS process with five implantation conditions splitting the N region in the PPD. The simulation and measured results demonstrate that the charge transfer time can be decreased by using the proposed techniques. Comparing the charge transfer time of the pixel with the different implantation conditions of the N region, the charge transfer time of 0.32 μs is achieved and 31% of image lag was reduced by using the proposed process techniques. (semiconductor devices)

High-Speed 3D Printing of Millimeter-Size Customized Aspheric Imaging Lenses with Sub 7 nm Surface Roughness.

Science.gov (United States)

Chen, Xiangfan; Liu, Wenzhong; Dong, Biqin; Lee, Jongwoo; Ware, Henry Oliver T; Zhang, Hao F; Sun, Cheng

2018-05-01

Advancements in three-dimensional (3D) printing technology have the potential to transform the manufacture of customized optical elements, which today relies heavily on time-consuming and costly polishing and grinding processes. However the inherent speed-accuracy trade-off seriously constrains the practical applications of 3D-printing technology in the optical realm. In addressing this issue, here, a new method featuring a significantly faster fabrication speed, at 24.54 mm 3 h -1 , without compromising the fabrication accuracy required to 3D-print customized optical components is reported. A high-speed 3D-printing process with subvoxel-scale precision (sub 5 µm) and deep subwavelength (sub 7 nm) surface roughness by employing the projection micro-stereolithography process and the synergistic effects from grayscale photopolymerization and the meniscus equilibrium post-curing methods is demonstrated. Fabricating a customized aspheric lens 5 mm in height and 3 mm in diameter is accomplished in four hours. The 3D-printed singlet aspheric lens demonstrates a maximal imaging resolution of 373.2 lp mm -1 with low field distortion less than 0.13% across a 2 mm field of view. This lens is attached onto a cell phone camera and the colorful fine details of a sunset moth's wing and the spot on a weevil's elytra are captured. This work demonstrates the potential of this method to rapidly prototype optical components or systems based on 3D printing. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Junction parameters and characterization of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction

Energy Technology Data Exchange (ETDEWEB)

El-Nahass, M.M.; El-Shazly, E.A.A. [Ain Shams University, Physics Department, Faculty of Education, Roxy, Cairo (Egypt); Ali, M.H. [Ain Shams University, Physics Department, Faculty of Science, Abassia, Cairo (Egypt); Zedan, I.T. [High Institute of Engineering and Technology, Basic Science Department, El-Arish, North Sinai (Egypt)

2016-08-15

The analysis of the electrical properties of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction is examined. I-V characteristics show diode-like behavior. The series resistance is found to decrease with increasing the temperature in three different methods of calculations. The thermionic emission mechanism is found to be the operating mechanism at relatively low forward voltages (V < 0.25). While, at relatively high forward voltage, the space charge limited conduction is the operating mechanism. The rectification ratio, ideality factor, barrier height, total trap concentration and built-in voltage are determined. The capacitance-voltage (C-V) characteristics of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction are also investigated. The I-V curve of the Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction in the dark and after illumination is clarified. (orig.)

Influence of surface effects on the pull-in instability of NEMS electrostatic switches

Energy Technology Data Exchange (ETDEWEB)

Ma, Jianming Bryan; Jiang Liying; Asokanthan, Samuel F, E-mail: lyjiang@eng.uwo.ca, E-mail: sasokanthan@eng.uwo.ca [Department of Mechanical and Materials Engineering, University of Western Ontario, London, ON, N6A 5B9 (Canada)

2010-12-17

The influence of surface effects, including residual surface stress and surface elasticity, on the pull-in instability of electrostatic switches in nanoelectromechanical systems (NEMS) is studied using an Euler-Bernoulli beam model. This model is inherently nonlinear due to the driving electrostatic force and Casimir force which become dominant at the nanoscale. Since no exact solutions are available for the resulting nonlinear differential equation, He's homotopy perturbation method (HPM) is used to get the approximate analytical solutions to the static bending of NEMS switches, which are validated by numerical solutions of the finite difference method (FDM). The results demonstrate that surface effects play a significant role in the selection of basic design parameters of NEMS switches, such as static deflection, pull-in voltage and detachment length. Surface effects on low-voltage actuation windows are also characterized for these switches. The present study is envisaged to provide useful insights for the design of NEMS switches.

Low speed phaselock speed control system. [for brushless dc motor

Science.gov (United States)

Fulcher, R. W.; Sudey, J. (Inventor)

1975-01-01

A motor speed control system for an electronically commutated brushless dc motor is provided which includes a phaselock loop with bidirectional torque control for locking the frequency output of a high density encoder, responsive to actual speed conditions, to a reference frequency signal, corresponding to the desired speed. The system includes a phase comparator, which produces an output in accordance with the difference in phase between the reference and encoder frequency signals, and an integrator-digital-to-analog converter unit, which converts the comparator output into an analog error signal voltage. Compensation circuitry, including a biasing means, is provided to convert the analog error signal voltage to a bidirectional error signal voltage which is utilized by an absolute value amplifier, rotational decoder, power amplifier-commutators, and an arrangement of commutation circuitry.

High speed intravascular photoacoustic imaging of atherosclerotic arteries (Conference Presentation)

Science.gov (United States)

Piao, Zhonglie; Ma, Teng; Qu, Yueqiao; Li, Jiawen; Yu, Mingyue; He, Youmin; Shung, K. Kirk; Zhou, Qifa; Kim, Chang-Seok; Chen, Zhongping

2016-02-01

Cardiovascular disease is the leading cause of death in the industrialized nations. Accurate quantification of both the morphology and composition of lipid-rich vulnerable atherosclerotic plaque are essential for early detection and optimal treatment in clinics. In previous works, intravascular photoacoustic (IVPA) imaging for detection of lipid-rich plaque within coronary artery walls has been demonstrated in ex vivo, but the imaging speed is still limited. In order to increase the imaging speed, a high repetition rate laser is needed. In this work, we present a high speed integrated IVPA/US imaging system with a 500 Hz optical parametric oscillator laser at 1725 nm. A miniature catheter with 1.0 mm outer diameter was designed with a 200 μm multimode fiber and an ultrasound transducer with 45 MHz center frequency. The fiber was polished at 38 degree and enclosed in a glass capillary for total internal reflection. An optical/electrical rotary junction and pull-back mechanism was applied for rotating and linearly scanning the catheter to obtain three-dimensional imaging. Atherosclerotic rabbit abdominal aorta was imaged as two frame/second at 1725 nm. Furthermore, by wide tuning range of the laser wavelength from 1680 nm to 1770 nm, spectroscopic photoacoustic analysis of lipid-mimicking phantom and an human atherosclerotic artery was performed ex vivo. The results demonstrated that the developed IVPA/US imaging system is capable for high speed intravascular imaging for plaque detection.

High-performance supercapacitors based on nanocomposites of Nb{sub 2}O{sub 5} nanocrystals and carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaolei; Chen, Zheng; Lu, Yunfeng [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA (United States); Li, Ge [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA (United States); Department of Physics, East China Normal University, Shanghai (China); Augustyn, Veronica; Dunn, Bruce [Department of Material Science and Engineering, University of California, Los Angeles, CA (United States); Ma, Xueming [Department of Physics, East China Normal University, Shanghai (China); Wang, Ge [School of Materials Science and Engineering, University of Science and Technology, Beijing (China)

2011-11-15

Nanocomposites of CNTs and Nb{sub 2}O{sub 5} nanocrystals were fabricated exhibiting excellent conductivity, high specific capacitance, and large voltage window, which led to successful fabrication of asymmetric supercapacitors with high energy densities, power densities, and cycling stability. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High-voltage therapy of carcinoma of the prostate

International Nuclear Information System (INIS)

Schnorr, D.; Kelly, L.U.; Guddat, H.M.; Schubert, J.; Gorski, J.; Schorcht, J.; Mau, S.; Wehnert, J.; Medizinische Akademie, Dresden

1983-01-01

High-voltage therapy is becoming increasingly important as a form of individual differential therapy of carcinoma of the prostate. Around 40% of all patients with a diagnosis of carcinoma of the prostate can be treated with high-voltage therapy. The precondition is the absence of bone and soft tissue metastases and of juxtaregional lymph node metastases. Individual carcinoma therapy is based on pre therapeutic tumor classification according to the TNM system. The 5-year survival rates are presented from a retrospective study carried out using primary radiation monotherapy and a combined hormone and radiation therapy; these figures were calculated by the life-table method. The study revealed no significant differences between the two forms of therapy as regards 5-year survival rates. The 5-year survival rates of all patients of the classifications T 0 -T 3 N/sub x/-N 2 M 0 irradiated (n: 198) (72% +- 11% for hormone plus radiation therapy and 74% +- 11% for radiation monotherapy) did not differ greatly from those of a normal male population of the same age (77%). High-voltage therapy of carcinoma of the prostate can thus be classified as a curative method of treatment. (author)

Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi{sub 0.9}Eu{sub 0.1}FeO{sub 3}/Nb-doped SrTiO{sub 3} heterostructures

Energy Technology Data Exchange (ETDEWEB)

Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang [Hubei Normal University, Institute for Advanced Materials, and School of Physics and Electronic Science, Huangshi (China); Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai [Wuhan University, School of Physics and Technology, and Key Laboratory of Artificial Micro/Nano Structures of the Ministry of Education, Wuhan (China); Hu, Zhongqiang [Northeastern University, Department of Electrical and Computer Engineering, Boston, MA (United States); Liu, Jun-Ming [Nanjing University, Laboratory of Solid State Microstructures, Nanjing (China)

2017-03-15

Epitaxial Bi{sub 0.9}Eu{sub 0.1}FeO{sub 3} (BEFO) thin films are deposited on Nb-doped SrTiO{sub 3} (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption. (orig.)

INTERSESSION RELIABILITY OF UPPER EXTREMITY ISOKINETIC PUSH-PULL TESTING.

Science.gov (United States)

Riemann, Bryan L; Davis, Sarah E; Huet, Kevin; Davies, George J

2016-02-01

Based on the frequency pushing and pulling patterns are used in functional activities, there is a need to establish an objective method of quantifying the muscle performance characteristics associated with these motions, particularly during the later stages of rehabilitation as criteria for discharge. While isokinetic assessment offers an approach to quantifying muscle performance, little is known about closed kinetic chain (CKC) isokinetic testing of the upper extremity (UE). To determine the intersession reliability of isokinetic upper extremity measurement of pushing and pulling peak force and average power at slow (0.24 m/s), medium (0.43 m/s) and fast (0.61 m/s) velocities in healthy young adults. The secondary purpose was to compare pushing and pulling peak force (PF) and average power (AP) between the upper extremity limbs (dominant, non-dominant) across the three velocities. Twenty-four physically active men and women completed a test-retest (>96 hours) protocol in order to establish isokinetic UE CKC reliability of PF and AP during five maximal push and pull repetitions at three velocities. Both limb and speed orders were randomized between subjects. High test-retest relative reliability using intraclass correlation coefficients (ICC2, 1) were revealed for PF (.91-.97) and AP (.85-.95) across velocities, limbs and directions. PF typical error (% coefficient of variation) ranged from 6.1% to 11.3% while AP ranged from 9.9% to 26.7%. PF decreased significantly (p pushing were significantly greater than pulling at all velocities, however the push-pull differences in PF became less as velocity increased. There were no significant differences identified between the dominant and nondominant limbs. Isokinetically derived UE CKC push-pull PF and AP are reliable measures. The lack of limb differences in healthy normal participants suggests that clinicians can consider bilateral comparisons when interpreting test performance. The increase in pushing PF and

High voltage distributions in RPCs

International Nuclear Information System (INIS)

Inoue, Y.; Muranishi, Y.; Nakamura, M.; Nakano, E.; Takahashi, T.; Teramoto, Y.

1996-01-01

High voltage distributions on the inner surfaces of RPCs electrodes were calculated by using a two-dimensional resistor network model. The calculated result shows that the surface resistivity of the electrodes should be high, compared to their volume resistivity, to get a uniform high voltage over the surface. Our model predicts that the rate capabilities of RPCs should be inversely proportional to the thickness of the electrodes if the ratio of surface-to-volume resistivity is low. (orig.)

Effect of Ca doping level on the laser-induced voltages in tilted La{sub 1-x}Ca{sub x}MnO{sub 3} (0.1 ≤ x ≤ 0.7) thin films

Energy Technology Data Exchange (ETDEWEB)

Ma, Ji; Zhang, Hui; Chen, Qingming; Liu, Xiang [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); Theingi, Mya [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); University of Yangon, Department of Chemistry, Yangon (Myanmar)

2014-03-15

Tilted La{sub 1-x}Ca{sub x}MnO{sub 3} (0.1 ≤ x ≤ 0.7) thin films have been grown on vicinal cut LaAlO{sub 3} (100) substrate by pulsed laser deposition. The laser-induced voltage effect was studied at room temperature with the KrF excimer laser using as the thermal source. The relationships between Ca doping level and voltage signal, response time and anisotropy Seebeck coefficient were established. The voltage signal and anisotropy Seebeck coefficient increase at first with increasing Ca doping level, reach a maximum at the same Ca content around x = 0.5, and then decrease. The respond time decreases with the Ca concentration increasing, and changes very little after x = 0.5. The figure of merit F{sub m} was also the largest at this doping level, indicating a potential good performance of the photodetector devices. The variation of intrinsic structural and transport anisotropy induced by the change of Ca concentration has been proposed to account for the different LIV effects observed in LCMO thin films. (orig.)

High speed rotary drum

Energy Technology Data Exchange (ETDEWEB)

Sagara, H

1970-03-25

A high speed rotary drum is disclosed in which the rotor vessel is a double-wall structure comprising an inner wave-shaped pipe inserted coaxially within an outer straight pipe, the object being to provide a strengthened composite light-weight structure. Since force induced axial deformation of the straight pipe and radial deformation of the corrugated pipe are small, the composite effectively resists external forces and, if the waves of the inner pipe are given a sufficient amplitude, the thickness of both pipes may be reduced to lower the overall weight. Thus high angular velocities can be obtained to separate U/sup 235/ from gaseous UF/sub 6/.

Effect of plasma voltage on sulfurization of α-MoO{sub 3} nanostructured thin films

Energy Technology Data Exchange (ETDEWEB)

Kumar, Prabhat, E-mail: prabhat89k@gmail.com; Singh, Megha; Sharma, Rabindar K.; Reddy, G. B. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016 (India)

2016-05-06

In this report, the effect of plasma voltage on plasma assisted sulfurization (PAS) of vertically aligned molybdenum trioxide (α- MoO{sub 3}) nanoflakes (NFs) on glass substrates has been studied systematically. MoO{sub 3} NFs were deposited using plasma assisted sublimation process. These nanoflakes were subjected to H{sub 2}S/Ar plasma at two different plasma voltages 600 and 1000 volts; to study the effect of plasma ionization on degree of sulfurization of MoO{sub 3} into MoS{sub 2}. XRD and Raman analysis show that film sulfurized at 1000 volts have relatively higher degree of conversion into MoS{sub 2}, as more intense peaks of MoS{sub 2} and MoO{sub 2} are obtained than that sulfurized at 600 volts. HRTEM of sulfurized film shows that outer surface of nanoflake has been converted into MoS{sub 2} (4-5 monolayers). Meanwhile, MoO{sub 3} was reduced into MoO{sub 2} as confirmed by XRD and Raman results. All the observed results are well in consonance with each other.

The ignition delay, laminar flame speed and adiabatic temperature characteristics of n-pentane, n-hexane and n-heptane under O{sub 2}/CO{sub 2} atmosphere

Energy Technology Data Exchange (ETDEWEB)

Zhao, Ran [Huazhong Univ. of Science and Technology, Wuhan (China). State Key Lab. of Coal Combustion; Wuhan Textile Univ. (China). School of Environment and Urban Construction; Liu, Hao; Zhong, Xiaojiao; Wang, Zijian; Jin, Ziqin; Qiu, Jianrong [Huazhong Univ. of Science and Technology, Wuhan (China). State Key Lab. of Coal Combustion; Chen, Yingming [Wuhan Textile Univ. (China). School of Environment and Urban Construction

2013-07-01

Oxy-fuel (O{sub 2}/CO{sub 2}) combustion is one of the several promising new technologies which can realize the integrated control of CO{sub 2}, SO{sub 2}, NO{sub X} and other pollutants. However, when fuels are burned in the high CO{sub 2} concentration environment, the combustion characteristics can be very different from conventional air-fired combustion. Such changes imply that the high CO{sub 2} concentration atmosphere has impacts on the combustion processes. In this paper, the ignition time, laminar flame speed and adiabatic temperature property of C{sub 5} {proportional_to} C{sub 7} n-alkane fuels were studied under both ordinary air atmosphere and O{sub 2}/CO{sub 2} atmospheres over a wide range of CO{sub 2} concentration in the combustion systems. A new unified detailed chemical kinetic model was validated and used to simulate the three liquid hydrocarbon fuel's flame characteristics. Based on the verified model, the influences of various parameters (atmosphere, excess oxygen ratio, O{sub 2} concentration, CO{sub 2} concentration, and alkane type) on the C{sub 5} {proportional_to} C{sub 7} n-alkane's flame characteristics were systematically investigated. It can be concluded that high CO{sub 2} concentration atmosphere has negative effect on n-pentane, n-hexane and n-heptane flame's ignition, laminar flame speed and adiabatic temperature. Besides, this work confirms that high CO{sub 2} concentration atmosphere's chemical effects play a pronounced role on the flame characteristics, especially for the ignition time property.

High voltage K/sub a/-band gyrotron oscillator experiment

International Nuclear Information System (INIS)

Gold, S.H.; Fliflet, A.W.; Manheimer, W.M.; Black, W.M.; Granatstein, V.L.; Kinkead, A.K.; Hardesty, D.L.; Sucy, M.

1986-01-01

Future applications of millimeter-waves may require significantly higher powers (>100 MW) than are available from the long-pulse thermionic gyrotrons that are presently available or under development. Scaling studies suggest that these power levels should be accessible to gyrotrons employing relativistic (0.5-1 MeV), multi-kA electron beams, such as can be generated for short pulse lengths (≤100 nsec) using pulseline accelerators with plasma-induced field-emission cathodes. To explore this potential, the authors have assembled a new gyrotron experiment based on a compact Febetron pulser. Initial experiments using a 350keV, 700A electron beam with a ratio of transverse to longitudinal velocity of ≅0.75 have produced ≅20MW at 35GHz at 8.5% efficiency in a TE/sub 62/ mode, in good agreement with the predictions of theory for the experimental parameters. Substantially higher powers and efficiencies are predicted for a new experimental configuration, which will operate at a higher voltage with improved beam parameters. In this new experiment, a 600 keV, multi-kA electron beam will be produced with low initial transverse energy. Transverse kinetic energy will then be added to the beam either by resonant pumping, via a magnetic wiggler, or by transit through a nonadiabatic magnetic ''bump.'' Finally, the beam will be adiabatically compressed to the desired radius in the gyrotron cavity with a final α≅1. The authors plan to report on the latest results from this new experimental configuration

High-voltage, high-current, solid-state closing switch

Science.gov (United States)

Focia, Ronald Jeffrey

2017-08-22

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

CMOS-compatible high-voltage integrated circuits

Energy Technology Data Exchange (ETDEWEB)

Parpia, Z

1988-01-01

Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

High-voltage picoamperemeter

Energy Technology Data Exchange (ETDEWEB)

Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

2014-07-01

Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

Single-phase highly densified SrBi{sub 2}Ta{sub 2}O{sub 9} compacts produced by high-pressure sintering

Energy Technology Data Exchange (ETDEWEB)

Pereira, Altair Soria; Souza, Ricson Rocha de; Sousa, Vania Caldas de, E-mail: altair@if.ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre (Brazil)

2016-07-01

Full text: The development of high-performance lead-free piezoelectric ceramics is an important scientific and technological challenge, as environmental and health issues have imposed restrictions to the use of lead zirconate titanates, the most employed material in ferroelectric devices [1]. Strontium bismuth tantalate (SBT),SrBi{sub 2}Ta{sub 2}O{sub 9}, is an interesting alternative ferroelectric material as its polarization can be modified at low voltages and it shows limited polarization switching fatigue. However, the production of highly densified single-phase bulk SBT by conventional sintering procedures is strongly compromised by stoichiometric changes due to bismuth loss. In this work, high-pressure sintering has been exploited as an alternative procedure to obtain SBT highly-densified single-phase compacts. Using toroidal-type high-pressure chambers, samples were produced by reaction sintering of BiTaO{sub 4} and SrCO{sub 3} powders, mixed in the stoichiometric ratio corresponding to SrBi{sub 2}Ta{sub 2}O{sub 9}, at pressures of 2.5 GPa and 7.7 GPa, and temperatures up to 1250°C, during 10 min. X-ray diffraction and scanning electron microscopy associated to energy-dispersive X-ray spectroscopy were used to follow the phase composition and the microstructure evolution as a function of the processing conditions. A single-phase SBT compact, with a relative density of 93% and a homogeneous microstructure, was produced by sintering at 2.5 GPa/900°C [2]. References: [1] K. Panda, J. Mater. Sci. 44, 5049-5062 (2009). [2] Ricson R.Souza, Rejane K. Kirchner, Jose R. Jurado, Altair S. Pereira, Vania C. Sousa. Journal of Solid State Chemistry 233, 259-268 (2016). (author)

A high performance P(VDF-TrFE) nanogenerator with self-connected and vertically integrated fibers by patterned EHD pulling

Science.gov (United States)

Chen, Xiaoliang; Tian, Hongmiao; Li, Xiangming; Shao, Jinyou; Ding, Yucheng; An, Ningli; Zhou, Yaopei

2015-07-01

Piezoelectricity based energy harvesting from mechanical vibrations has attracted extensive attention for its potential application in powering wireless mobile electronics recently. Here, a patterned electrohydrodynamic (EHD) pulling technology was proposed to fabricate a new self-connected, piezoelectric fiber array vertically integrated P(VDF-TrFE) nanogenerator, with a molecular poling orientation fully aligned to the principal excitation for maximized conversion and a well-bridged electrode pair for efficient charge collection. The nanogenerator is fabricated in a novel way by applying a voltage across an electrode pair sandwiching an air gap and an array of shallow micropillars, during which the EHD force tends to pull the micropillars upward, generating a microfiber array finally in robust contact with the upper electrode. Such a thermoplastic and EHD deformation of the microfibers, featured simultaneously by an electric field and by a microfiber elongation dominantly vertical to the electrode, leads to a poling orientation of P(VDF-TrFE) well coincident with the principal strain for the generator excited by a force normal to the electrodes. The as-prepared piezoelectric device exhibits an enhanced output voltage up to 4.0 V and a current of 2.6 μA, therefore the piezoelectric voltage was enhanced to 5.4 times that from the bulk film. Under periodic mechanical impact, electric signals are repeatedly generated from the device and used to power a seven-segment indicator, RBGY colored light-emitting diodes, and a large-scale liquid crystal display screen. These results not only provide a tool for fabricating 3D piezoelectric polymers but offer a new type of self-connected nanogenerator for the next generation of self-powered electronics.Piezoelectricity based energy harvesting from mechanical vibrations has attracted extensive attention for its potential application in powering wireless mobile electronics recently. Here, a patterned electrohydrodynamic (EHD

Sensorless speed detection of squirrel-cage induction machines using stator neutral point voltage harmonics

Science.gov (United States)

Petrovic, Goran; Kilic, Tomislav; Terzic, Bozo

2009-04-01

In this paper a sensorless speed detection method of induction squirrel-cage machines is presented. This method is based on frequency determination of the stator neutral point voltage primary slot harmonic, which is dependent on rotor speed. In order to prove method in steady state and dynamic conditions the simulation and experimental study was carried out. For theoretical investigation the mathematical model of squirrel cage induction machines, which takes into consideration actual geometry and windings layout, is used. Speed-related harmonics that arise from rotor slotting are analyzed using digital signal processing and DFT algorithm with Hanning window. The performance of the method is demonstrated over a wide range of load conditions.

Detecting Faults In High-Voltage Transformers

Science.gov (United States)

Blow, Raymond K.

1988-01-01

Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

A high-voltage equipment (high voltage supply, high voltage pulse generators, resonant charging inductance, synchro-instruments for gyrotron frequency measurements) for plasma applications

International Nuclear Information System (INIS)

Spassov, Velin

1996-01-01

This document reports my activities as visitor-professor at the Gyrotron Project - INPE Plasma Laboratory. The main objective of my activities was designing, construction and testing a suitable high-voltage pulse generator for plasma applications, and efforts were concentrated on the following points: Design of high-voltage resonant power supply with tunable output (0 - 50 kV) for line-type high voltage pulse generator; design of line-type pulse generator (4 microseconds pulse duration, 0 - 25 kV tunable voltage) for non linear loads such as a gyrotron and P III reactor; design of resonant charging inductance for resonant line-type pulse generator, and design of high resolution synchro instrument for gyrotron frequency measurement. (author)

Feasibility of high-speed power line carrier system to Japanese overhead low voltage distribution lines; Teiatsu haidensen hanso no kosokuka no kanosei (hanso sningo denpa purogram no kanosei)

Energy Technology Data Exchange (ETDEWEB)

Suzuki, T.; Takeshita, K.; Ishino, R.

2000-06-01

The high-speed distribution line carrier systems on underground distribution lines are being developed in Germany. To estimate these systems on Japanese overhead low voltage distribution lines, the Carrier Propagation Program has been developed and applicability of OFDM system was roughly estimated. 1. Carrier Propagation Program Carrier Propagation Program that calculates the carrier propagation characteristics of any line structure was developed. 2. Carrier propagation characteristics Carrier propagation characteristics on typical Japanese overhead low voltage distribution lines were calculated 3.Rough estimation of OFDM system Electric fields caused by carrier at near point were calculated on the basis on carrier propagation characteristics. Results of rough estimation are as follows: - Electric field caused by carrier of more than 2Mbps system exceeds the value of the regulation. (author)

Direct Numerical Simulations of High-Speed Turbulent Boundary Layers over Riblets

Science.gov (United States)

Duan, Lian; Choudhari, Meelan, M.

2014-01-01

Direct numerical simulations (DNS) of spatially developing turbulent boundary layers over riblets with a broad range of riblet spacings are conducted to investigate the effects of riblets on skin friction at high speeds. Zero-pressure gradient boundary layers under two flow conditions (Mach 2:5 with T(sub w)/T(sub r) = 1 and Mach 7:2 with T(sub w)/T(sub r) = 0:5) are considered. The DNS results show that the drag-reduction curve (delta C(sub f)/C(sub f) vs l(sup +)(sub g )) at both supersonic speeds follows the trend of low-speed data and consists of a `viscous' regime for small riblet size, a `breakdown' regime with optimal drag reduction, and a `drag-increasing' regime for larger riblet sizes. At l l(sup +)(sub g) approx. 10 (corresponding to s+ approx 20 for the current triangular riblets), drag reduction of approximately 7% is achieved at both Mach numbers, and con rms the observations of the few existing experiments under supersonic conditions. The Mach- number dependence of the drag-reduction curve occurs for riblet sizes that are larger than the optimal size, with smaller slopes of (delta C(sub f)/C(sub f) for larger freestream Mach numbers. The Reynolds analogy holds with 2(C(sub h)=C(sub f) approximately equal to that of at plates for both drag-reducing and drag-increasing configurations.

Fabrication of full high-T sub c superconducting YBa sub 2 Cu sub 3 O sub 7 sub - sub x trilayer junctions using a polishing technique

CERN Document Server

Kuroda, K; Takami, T; Ozeki, T

2003-01-01

We have successfully fabricated full high-T sub c superconducting YBa sub 2 Cu sub 3 O sub 7 sub - sub x (YBCO)/PrBa sub 2 Cu sub 3 O sub 7 sub - sub x (PBCO)/YBCO trilayer junctions, which have a simple device structure, such as a Pb-alloy-based Josephson tunneling junction. It has been demonstrated that a polishing technique is extremely useful in the fabrication process: it is effective in smoothing a coarse surface and gentling the slopes of the edges, or decreasing the slope angles. Owing to the polishing technique, the PBCO barrier layer and the upper YBCO layer have been notably thinned: the thicknesses of these layers are 10 nm and 250 nm, respectively. Junctions with the dimensions of 5 mu m x 5 mu m showed resistively shunted junction-like current-voltage curves with a typical critical current density of 110 A/cm sup 2 at 4.2 K. Furthermore, the operation of superconducting quantum interference devices has been demonstrated. (author)

A comparison of medium voltage static transfer switches and medium voltage mechanical transfer switches

Energy Technology Data Exchange (ETDEWEB)

Risko, W. P.

2002-07-01

Medium voltage static transfer switches (MVSTS) and medium voltage mechanical transfer switches (MVATS) perform a common function, namely selecting between two independent power sources to provide uninterrupted power to the loads. Although the functions are the same the method of performing that function is different and this method impacts the sources and connected load. This article describes the two methods of transfer -- mechanical and static -- their advantages and disadvantages, and their preferred applications. The MVSTS can be incorporated into many applications; it can work in conjunction with backup sources such as generators; and can replace generators as a low cost solution. The reliability of the MVSTS is very high; it also outperforms the MVATS with regard to transfer speed, and can react to anomalies in the same sub-cycle time frame. Because the design of the MVSTS is modular, it can be engineered and designed to fit into existing and future systems and applications, and can be used with different switchgear variations and protection arrangements. For example, load isolation and protection breakers can be added to the switchgear to provide flexibility and isolation.

A new architecture for low-power high-speed pipelined ADCs using double-sampling and opamp-sharing techniques

NARCIS (Netherlands)

Abdinia, S.; Yavari, M.

2009-01-01

This paper presents a low-voltage low-power pipelined ADC with 1V supply voltage in a 90nm CMOS process. A new architecture is proposed to reduce the power consumption in high-speed pipelined analog-to-digital converters (ADCs). The presented architecture utilizes a combination of two current

Development of a high throughput single-particle screening for inorganic semiconductor nanorods as neural voltage sensor

Science.gov (United States)

Kuo, Yung; Park, Kyoungwon; Li, Jack; Ingargiola, Antonino; Park, Joonhyuck; Shvadchak, Volodymyr; Weiss, Shimon

2017-08-01

Monitoring membrane potential in neurons requires sensors with minimal invasiveness, high spatial and temporal (sub-ms) resolution, and large sensitivity for enabling detection of sub-threshold activities. While organic dyes and fluorescent proteins have been developed to possess voltage-sensing properties, photobleaching, cytotoxicity, low sensitivity, and low spatial resolution have obstructed further studies. Semiconductor nanoparticles (NPs), as prospective voltage sensors, have shown excellent sensitivity based on Quantum confined Stark effect (QCSE) at room temperature and at single particle level. Both theory and experiment have shown their voltage sensitivity can be increased significantly via material, bandgap, and structural engineering. Based on theoretical calculations, we synthesized one of the optimal candidates for voltage sensors: 12 nm type-II ZnSe/CdS nanorods (NRs), with an asymmetrically located seed. The voltage sensitivity and spectral shift were characterized in vitro using spectrally-resolved microscopy using electrodes grown by thin film deposition, which "sandwich" the NRs. We characterized multiple batches of such NRs and iteratively modified the synthesis to achieve higher voltage sensitivity (ΔF/F> 10%), larger spectral shift (>5 nm), better homogeneity, and better colloidal stability. Using a high throughput screening method, we were able to compare the voltage sensitivity of our NRs with commercial spherical quantum dots (QDs) with single particle statistics. Our method of high throughput screening with spectrally-resolved microscope also provides a versatile tool for studying single particles spectroscopy under field modulation.

Low-Voltage Ride-Through of Variable Speed Wind Turbines with Permanent Magnet Synchronous Generator

DEFF Research Database (Denmark)

Deng, Fujin; Chen, Zhe

2009-01-01

This paper presents a simulation model of a MW-level variable speed wind turbine with a permanent magnet synchronous generator (PMSG) and a full-scale converter developed in the simulation tool of PSCAD/EMTDC. The low voltage ride-through (LVRT) capability of the wind turbine is investigated. A new...... control scheme for the wind turbine that keeps it connected to the grid during grid faults is designed and simulated. Its design has special focus on the regulation of the DC-link voltage. Simulation results show the proposed control scheme is an effective measure to improve LVRT capability of variable...

A high sensitivity process variation sensor utilizing sub-threshold operation

OpenAIRE

Meterelliyoz, Mesut; Song, Peilin; Stellari, Franco; Kulkarni, Jaydeep P.; Roy, Kaushik

2008-01-01

In this paper, we propose a novel low-power, bias-free, high-sensitivity process variation sensor for monitoring random variations in the threshold voltage. The proposed sensor design utilizes the exponential current-voltage relationship of sub-threshold operation thereby improving the sensitivity by 2.3X compared to the above-threshold operation. A test-chip containing 128 PMOS and 128 NMOS devices has been fabri...

Flexible, High-Speed CdSe Nanocrystal Integrated Circuits.

Science.gov (United States)

Stinner, F Scott; Lai, Yuming; Straus, Daniel B; Diroll, Benjamin T; Kim, David K; Murray, Christopher B; Kagan, Cherie R

2015-10-14

We report large-area, flexible, high-speed analog and digital colloidal CdSe nanocrystal integrated circuits operating at low voltages. Using photolithography and a newly developed process to fabricate vertical interconnect access holes, we scale down device dimensions, reducing parasitic capacitances and increasing the frequency of circuit operation, and scale up device fabrication over 4 in. flexible substrates. We demonstrate amplifiers with ∼7 kHz bandwidth, ring oscillators with <10 μs stage delays, and NAND and NOR logic gates.

Liquid metal current collectors for high-speed rotating machinery

International Nuclear Information System (INIS)

Carr, S.L.

1976-01-01

Recent interest in superconducting motors and generators has created a renewed interest in homopolar machinery. Homopolar machine designs have always been limited by the need for compact, high-current, low-voltage, sliding electrical curent collectors. Conventional graphite-based solid brushes are inadequate for use in homopolar machines. Liquid metals, under certain conditions of relative sliding velocities, electrical currents, and magnetic fields are known to be capable of performing well in homopolar machines. An effort to explore the capabilities and limits of a tongue-and-groove style current collector, utilizing sodium-potassium eutectic alloy (NaK) as the working fluid in high sliding speed operation is reported here. A double current collector generator model with a 14.5-cm maximum rotor diameter, 20,000 rpm rotational capability, and electrical current carrying ability was constructed and operated successfully at a peripheral velocity of 125 m/s. The limiting factor in these experiments was a high-speed fluid-flow instability resulting in the ejection of the working fluid from the operating portions of the collectors. The effects of collector size and geometry, working fluid (NaK or water), and cover gas pressure are reported. Hydrodynamic frictional torque-speed curves are given for the two fluids and for several geometries. Electrical resistances as a function of peripheral velocity at 60 amperes are reported, and the phenomenology of the high-speed fluid-flow instabilities is discussed. The possibility of long-term high-speed operation of current collectors of the tongue-and-groove type, along with experimental and theoretical hydrodynamic friction losses at high peripheral velocities, is considered

High Voltage in Noble Liquids for High Energy Physics

Energy Technology Data Exchange (ETDEWEB)

Rebel, B. [Fermilab; Bernard, E. [Yale U.; Faham, C. H. [LBL, Berkeley; Ito, T. M. [Los Alamos; Lundberg, B. [Maryland U.; Messina, M. [Columbia U.; Monrabal, F. [Valencia U., IFIC; Pereverzev, S. P. [LLNL, Livermore; Resnati, F. [Zurich, ETH; Rowson, P. C. [SLAC; Soderberg, M. [Fermilab; Strauss, T. [Bern U.; Tomas, A. [Imperial Coll., London; Va' vra, J. [SLAC; Wang, H. [UCLA

2014-08-22

A workshop was held at Fermilab November 8-9, 2013 to discuss the challenges of using high voltage in noble liquids. The participants spanned the fields of neutrino, dark matter, and electric dipole moment physics. All presentations at the workshop were made in plenary sessions. This document summarizes the experiences and lessons learned from experiments in these fields at developing high voltage systems in noble liquids.

A Comprehensive Review of Low-Voltage-Ride-Through Methods for Fixed-Speed Wind Power Generators

DEFF Research Database (Denmark)

Moghadasi, Amirhasan; Sarwat, Arif; Guerrero, Josep M.

2016-01-01

This paper presents a comprehensive review of various techniques employed to enhance the low voltage ride through (LVRT) capability of the fixed-speed induction generators (FSIGs)-based wind turbines (WTs), which has a non-negligible 20% contribution of the existing wind energy in the world...

High-speed PIV applied to the wake of the NASA CRM model in ETW at high Re-number stall conditions for sub- and transonic speeds

OpenAIRE

Konrath, Robert; Geisler, Reinhard; Otter, Dirk; Philipp, Florian; Ehlers, Hauke; Agocs, Janos; Quest, Jürgen

2015-01-01

Within the framework of the EU project ESWIRP the Particle Image Velocimetry (PIV) using high-speed camera and laser has been used to measure the turbulent flow in the wake of a stalled aircraft wing. The measurements took place on the Common Research Model (CRM) provided by NASA in the pressurized cryogenic European Transonic Wind tunnel (ETW). A specific cryo-PIV system has been used and adapted for using high-speed PIV components under the cryogenic conditions of the wind tunnel faci...

Disodium terephthalate (Na{sub 2}C{sub 8}H{sub 4}O{sub 4}) as high performance anode material for low-cost room-temperature sodium-ion battery

Energy Technology Data Exchange (ETDEWEB)

Zhao, Liang; Hu, Yong-Sheng; Li, Hong; Armand, Michel; Chen, Liquan [Key Laboratory for Renewable Energy, Beijing Key Laboratory for New, Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing (China); Zhao, Junmei [Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing (China); Zhou, Zhibin [School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan (China)

2012-08-15

In this contribution, a cheap organic material, disodium terephthalate, Na{sub 2}C{sub 8}H{sub 4}O{sub 4}, has been firstly evaluated as a novel anode for room-temperature Na-ion batteries. The material exhibits a high reversible capacity of 250 mAh/g with excellent cycleability. The average Na storage voltage is approximately 0.43 V vs. Na{sup +}/Na. A thin layer of Al{sub 2}O{sub 3} coating on the electrode surface derived from the atomic layer deposition technique is effective in further enhancing Na storage performance. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Calibration of the precision high voltage dividers of the KATRIN experiment

Energy Technology Data Exchange (ETDEWEB)

Rest, Oliver [Institut fuer Kernphysik, Westfaelische Wilhelms-Universitaet Muenster (Germany); Collaboration: KATRIN-Collaboration

2016-07-01

The KATRIN (KArlsruhe TRItium Neutrino) experiment will measure the endpoint region of the tritium β decay spectrum to determine the neutrino mass with a sensitivity of 200 meV/c{sup 2}. To achieve this sub-eV sensitivity the energy of the decay electrons will be analyzed using a MAC-E type spectrometer. The retarding potential of the MAC-E-filter (up to -35 kV) has to be monitored with a relative precision of 3 . 10{sup -6}. For this purpose the potential will be measured directly via two custom made precision high voltage dividers, which were developed and constructed in cooperation with the Physikalisch-Technische Bundesanstalt Braunschweig. In order to determine the absolute values and the stability of the scale factors of the voltage dividers, regular calibration measurements are essential. Such measurements have been performed during the last years using several different methods. The poster gives an overview of the methods and results of the calibration of the precision high voltage dividers.

65NM sub-threshold 11T-SRAM for ultra low voltage applications

DEFF Research Database (Denmark)

Moradi, Farshad; Wisland, Dag T.; Aunet, Snorre

In this paper a new ultra low power SRAM cell is proposed. In the proposed SRAM topology, additional circuitry has been added to a standard 6T-SRAM cell to improve the static noise margin (SNM) and the performance. Foundry models for a 65 nm standard CMOS process were used for obtaining reliable...... simulated results. The circuit was simulated for supply voltages from 0.2 V to 0.35 V verifying the robustness of the proposed circuit for different supply voltages. The simulations show a significant improvement in SNM and a 4X improvement in read speed still maintaining a satisfactory write noise margin...

Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

Science.gov (United States)

Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

2016-10-03

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

Energy Technology Data Exchange (ETDEWEB)

Savic, M.S.

1986-07-01

The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

High speed non-latching squid binary ripple counter

International Nuclear Information System (INIS)

Silver, A.H.; Phillips, R.R.; Sandell, R.D.

1985-01-01

High speed, single flux quantum (SFQ) binary scalers are important components in superconducting analog-to-digital converters (ADC). This paper reviews the concept for a SQUID ADC and the design of an SFQ binary ripple counter, and reports the simulation of key components, and fabrication and performance of non-latching SQUID scalers and SFQ binary ripple counters. The SQUIDs were fabricated with Nb/Nb 2 O 5 /PbIn junctions and interconnected by monolithic superconducting transmission lines and isolation resistors. Each SQUID functioned as a bistable flip-flop with the input connected to the center of the device and the output across one junction. All junctions were critically damped to optimize the pulse response. Operation was verified by observing the dc I-V curves of successive SQUIDs driven by a cw pulse train generated on the same chip. Each SQUID exhibited constant-voltage current steps at 1/2 the voltage of the preceding device as expected from the Josephson voltage-to-frequency relation. Steps were observed only for the same voltage polarity of successive devices and for proper phase bias of the SQUID. Binary frequency division was recorded up to 40GHz for devices designed to operate to 28GHz

Single-crystal LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} as high performance cathode materials for Li-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Wang, Lei [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing Key Laboratory of Environment Science and Engineering, Beijing 100081 (China); Wu, Borong, E-mail: wubr@bit.edu.cn [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing Key Laboratory of Environment Science and Engineering, Beijing 100081 (China); Beijing Higher Institution Engineering Research Center of Power Battery and Chemical Energy Materials, Beijing 100081 (China); Collaborative Innovation Center of Electric Vehicles in Beijing, Beijing 100081 (China); Mu, Daobin, E-mail: mudb@bit.edu.cn [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing Key Laboratory of Environment Science and Engineering, Beijing 100081 (China); Beijing Higher Institution Engineering Research Center of Power Battery and Chemical Energy Materials, Beijing 100081 (China); Liu, Xiaojiang [Institute of Electric Engineering, China Academy of Engineering Physics, Mianyang 621900 (China); Peng, Yiyuan [Key Laboratory of Small Fuctional Organic Molecule, Ministry of Education, Jiangxi Normal University, Nanchang 330022 (China); Xu, Hongliang; Liu, Qi; Gai, Liang [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing Key Laboratory of Environment Science and Engineering, Beijing 100081 (China); Wu, Feng [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing Key Laboratory of Environment Science and Engineering, Beijing 100081 (China); Beijing Higher Institution Engineering Research Center of Power Battery and Chemical Energy Materials, Beijing 100081 (China); Collaborative Innovation Center of Electric Vehicles in Beijing, Beijing 100081 (China)

2016-07-25

Single-crystal nickel-high materials (ST-LNCMO) LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} have been synthesized using a versatile hydrothermal method. The as-prepared samples are characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM), and selected area electron diffraction (SAED). The results show that the sample annealed at an optimized temperature of 850 °C reveals uniform fine well-crystallized single-particles with diameters of ~800 nm. Electrochemical data demonstrate that the cell using this nickel-high material as the cathode exhibits excellent performance. The sample displays a high capacity of 183.7 mA h·g{sup −1} at 36 mA·g{sup −1} (0.2 C) and excellent cycling stability at different rates. It yields an initial discharge capacity of 153.6 mA h·g{sup −1} at a rate of 10C-rate and a voltage of 2.8 V – 4.3 V. The sample also has an outstanding rate capacity at a high cut-off voltage (4.6 V). This superior performance is attributed to the merits of the single-crystal structure, which may be beneficial to the transportation of the Li{sup +} ion along the grain. - Highlights: • A single-crystal LiNi{sub 0.6}Co{sub 0.2}Mn{sub 0.2}O{sub 2} is prepared by a hydrothermal method. • A high discharge capacity of 183.7 mA h·g{sup −1} at 0.2 C and good cycling stability. • It yields an initial discharge capacity of 153.6 mA h·g{sup −1} at 10 C-rate under 2.8 V–4.3 V. • Superior electrochemical performance may be obtained attributed to the single-crystal structure.

Evolution of interfacial Fermi level in In{sub 0.53}Ga{sub 0.47}As/high-κ/TiN gate stacks

Energy Technology Data Exchange (ETDEWEB)

Carr, Adra; Rozen, John; Frank, Martin M.; Ando, Takashi; Cartier, Eduard A.; Kerber, Pranita; Narayanan, Vijay; Haight, Richard [IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

2015-07-06

The net charge state was probed of metal-oxide-semiconductor gate stacks consisting of In{sub 0.53}Ga{sub 0.47}As /high-κ dielectric/5 nm TiN, for both Al{sub 2}O{sub 3} and HfO{sub 2} dielectrics, via investigation of band bending at the InGaAs/high-κ interface. Using pump-probe photoelectron spectroscopy, changes to band bending were studied for each sequential layer deposited onto the InGaAs substrate and subsequent annealing up to 600 °C. Two behavioral regions were observed in annealing studies: (1) a lower temperature (<350 °C) region, attributed to changes at the high-κ/TiN interface, and (2) a higher temperature region (> 350 °C), associated with a net positive charge increase within the oxide. These band bending measurements delineate the impact of processing steps inherently inaccessible via capacitance-voltage electrical characterization.

High speed subfractional HP-motor with permanent magnets

International Nuclear Information System (INIS)

Hanitsch, R.; Frenzel, B.

1998-01-01

During the last years an increasing demand for small permanent magnet motors can be detected, especially in the fields of medical applications. For heart assist devices there is the request to have small high speed devices operating at low voltage supply with almost no overtemperature. The design of a special hollow shaft motor for the speed range of 15000..25000 rpm and a torque of 4 to 8 mNm will be outlined. The low noise requirements and the high efficiency request lead to a design with an airgap winding. A thermal analysis is also done in order to meet the conditions given by the medical specialists. The features of the prototype will be presented and also the sensorless control strategy will be outlined. Measured and calculated data show good agreement. Focus will be on the magnetic circuit and the thermal behaviour and not on the control aspects of the motor. Specific parameters demonstrate the good quality of the drive system. (orig.)

Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

Science.gov (United States)

Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

2015-06-01

High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

Energy Technology Data Exchange (ETDEWEB)

Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

2016-09-01

We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

LED-Based High-Voltage Lines Warning System

Directory of Open Access Journals (Sweden)

Eldar MUSA

2013-04-01

Full Text Available LED-based system, running with the current of high-voltage lines and converting the current flowing through the line into the light by using a toroid transformer, has been developed. The transformer’s primary winding is constituted by the high voltage power line. Toroidal core consists of two equal parts and the secondary windings are evenly placed on these two parts. The system is mounted on the high-voltage lines as a clamp. The secondary winding ends are connected in series by the connector on the clamp. LEDs are supplied by the voltage at the ends of secondary. Current flowing through highvoltage transmission lines is converted to voltage by the toroidal transformer and the light emitting LEDs are supplied with this voltage. The theory of the conversion of the current flowing through the line into the light is given. The system, running with the current of the line and converting the current into the light, has been developed. System has many application areas such as warning high voltage lines (warning winches to not hinder the high-voltage lines when working under the lines, warning planes to not touch the high-voltage lines, remote measurement of high-voltage line currents, and local illumination of the line area

Ionic Liquid Gating Control of RKKY Interaction in FeCoB/Ru/FeCoB and (Pt/Co)<sub>2sub>/Ru/(Co/Pt)>2sub> Multilayers.

Energy Technology Data Exchange (ETDEWEB)

Yang, Qu; Wang, Lei; Zhou, Ziyao; Wang, Liqian; Zhang, Yijun; Zhao, Shishun; Dong, Guohua; Cheng, Yuxin; Min, Tai; Hu, Zhongqiang; Chen, Wei; Xia, Ke; Liu, Ming

2018-03-07

To overcome the fundamental challenge of the weak natural response of antiferromagnetic materials under a magnetic field, voltage manipulation of antiferromagnetic interaction is developed to realize ultrafast, high-density, and power efficient antiferromagnetic spintronics. Here, we report a low voltage modulation of Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction via ionic liquid gating in synthetic antiferromagnetic multilayers of FeCoB/Ru/FeCoB and (Pt/Co)<sub>2sub>/Ru/(Co/Pt)>2sub>. At room temperature, the distinct voltage control of transition between antiferromagnetic and ferromagnetic ordering is realized and up to 80% of perpendicular magnetic moments manage to switch with a small-applied voltage bias of 2.5 V. We related this ionic liquid gating-induced RKKY interaction modification to the disturbance of itinerant electrons inside synthetic antiferromagnetic heterostructure and the corresponding change of its Fermi level. Voltage tuning of RKKY interaction may enable the next generation of switchable spintronics between antiferromagnetic and ferromagnetic modes with both fundamental and practical perspectives.

Characterisation of an optimised high current MgO/Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8.21} composite conductor using pulsed transport currents with pulsed magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Glowacki, B A; Gilewski, A; Rogacki, K; Kursumovic, A; Evetts, J E; Jones, H; Henson, R; Tsukamoto, O

2003-01-15

High temperature superconducting conductors are already used in hybrid magnets to produce fields that enhance the performance of conventional magnets made from A-15 type low temperature superconducting wires. For such applications it is vital that the interdependence of the critical parameters such as critical current versus magnetic field can be mapped under high field and high current conditions. However these superconductors have high critical currents even at fields over 20 T, making accurate measurements difficult due to the thermal and mechanical problems. In this paper, we compare measurements on the fully optimised Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8.21} flat rigid conductors using an innovative pulsed high transport current and pulsed high field technique. We show how analysis of the voltage signal from Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8.21} tape in pulsed conditions may be used to extract the critical current under quasi-stationary conditions.

Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

2015-05-01

The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

Equivalent magnetic noise reduction at high frequency range due to polarized direction optimization in Terfenol-D/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} magnetoelectric laminate sensors

Energy Technology Data Exchange (ETDEWEB)

Fang, Cong, E-mail: fangcong86@gmail.com [Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing, 100049 (China); Ma, Jiashuai; Yao, Meng [Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing, 100049 (China); Di, Wenning; Lin, Di; Xu, Haiqing; Wang, Wei [Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); Luo, Haosu, E-mail: hsluo@mail.sic.ac.cn [Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China)

2017-02-01

In this paper, we investigate the responsivities and output voltage noise power spectral densities of magnetoelectric (ME) laminate sensors, consisting of length magnetized Terfenol-D alloys and transverse/width poled Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} (PMNT) crystals (i.e. L-T mode and L-W mode respectively), which are directly integrated with custom-build low noise charge amplifier circuits. Both the theoretical analyses and experimental results prove that the L-W mode sensor with the optimized polarized direction of the PMNT plate possesses lower magnetic detection limit at the interested high frequency range of 10 kHz≤f≤50 kHz. The equivalent magnetic noise (EMN) of the L-W mode sensor is 0.78 pT/Hz{sup 1/2} at 30 kHz, which is about 1.7 times lower than the 1.35 pT/Hz{sup 1/2} for conventional L-T mode sensor. Furthermore, an effective method of using operational amplifiers with low equivalent input noise voltage and employing ME laminate composites with high voltage coefficient to reduce the EMNs of the ME laminate sensors at high frequency range has been established. - Highlights: • We present fabrications and properties of the L-T and L-T mode ME composites. • The equivalent magnetic noise levels at high frequency are measured. • The equivalent magnetic noise of the L-W mode sensor is 0.78 pT/Hz{sup 1/2} at 30 kHz. • The dominated noise source can be confirmed from OPA at high frequency range.

High-voltage electrode optimization towards uniform surface treatment by a pulsed volume discharge

International Nuclear Information System (INIS)

Ponomarev, A V; Pedos, M S; Scherbinin, S V; Mamontov, Y I; Ponomarev, S V

2015-01-01

In this study, the shape and material of the high-voltage electrode of an atmospheric pressure plasma generation system were optimised. The research was performed with the goal of achieving maximum uniformity of plasma treatment of the surface of the low-voltage electrode with a diameter of 100 mm. In order to generate low-temperature plasma with the volume of roughly 1 cubic decimetre, a pulsed volume discharge was used initiated with a corona discharge. The uniformity of the plasma in the region of the low-voltage electrode was assessed using a system for measuring the distribution of discharge current density. The system's low-voltage electrode - collector - was a disc of 100 mm in diameter, the conducting surface of which was divided into 64 radially located segments of equal surface area. The current at each segment was registered by a high-speed measuring system controlled by an ARM™-based 32-bit microcontroller. To facilitate the interpretation of results obtained, a computer program was developed to visualise the results. The program provides a 3D image of the current density distribution on the surface of the low-voltage electrode. Based on the results obtained an optimum shape for a high-voltage electrode was determined. Uniformity of the distribution of discharge current density in relation to distance between electrodes was studied. It was proven that the level of non-uniformity of current density distribution depends on the size of the gap between electrodes. Experiments indicated that it is advantageous to use graphite felt VGN-6 (Russian abbreviation) as the material of the high-voltage electrode's emitting surface. (paper)

Class II malocclusion treatment using high-pull headgear with a splint: a systematic review

Directory of Open Access Journals (Sweden)

Helder B. Jacob

2013-04-01

Full Text Available OBJECTIVE: To systematically review the scientific evidence pertaining to the effectiveness of high-pull headgear in growing Class II subjects. METHODS: A literature survey was performed by electronic database search. The survey covered the period from January 1966 to December 2008 and used Medical Subject Headings (MeSH. Articles were initially selected based on their titles and abstracts; the full articles were then retrieved. The inclusion criteria included growing subjects between 8 to 15 years of age, Class II malocclusion treatment with high-pull headgear, and a control group with Class II malocclusion. References from selected articles were hand-searched for additional publications. Selected studies were evaluated methodologically. RESULTS: Four articles were selected; none were randomized controlled trials. All of the articles clearly formulated their objectives and used appropriate measures. The studies showed that high-pull headgear treatment improves skeletal and dental relationship, distal displacement of the maxilla, vertical eruption control and upper molars distalization. One of the studies showed a slight clockwise rotation of the palatal plane; the others showed no significant treatment effect. The mandible was not affected by the treatment. CONCLUSION: While there is still a lack of strong evidence demonstrating the effects of high-pull headgear with a splint, other studies indicate that the AP relations improve due to distalization of the maxilla and upper molars, with little or no treatment effects in the mandible. Greater attention to the design should be given to improve the quality of such trials.

Modeling and simulations of new electrostatically driven, bimorph actuator for high beam steering micromirror deflection angles

Science.gov (United States)

Walton, John P.; Coutu, Ronald A.; Starman, LaVern

2015-02-01

There are numerous applications for micromirror arrays seen in our everyday lives. From flat screen televisions and computer monitors, found in nearly every home and office, to advanced military weapon systems and space vehicles, each application bringing with it a unique set of requirements. The microelectromechanical systems (MEMS) industry has researched many ways micromirror actuation can be accomplished and the different constraints on performance each design brings with it. This paper investigates a new "zipper" approach to electrostatically driven micromirrors with the intent of improving duel plane beam steering by coupling large deflection angles, over 30°, and a fast switching speed. To accomplish this, an extreme initial deflection is needed which can be reached using high stress bimorph beams. Currently this requires long beams and high voltage for the electrostatic pull in or slower electrothermal switching. The idea for this "zipper" approach is to stack multiple beams of a much shorter length and allow for the deflection of each beam to be added together in order to reach the required initial deflection height. This design requires much less pull-in voltage because the pull-in of one short beam will in turn reduce the height of the all subsequent beams, making it much easier to actuate. Using modeling and simulation software to characterize operations characteristics, different bimorph cantilever beam configurations are explored in order to optimize the design. These simulations show that this new "zipper" approach increases initial deflection as additional beams are added to the assembly without increasing the actuation voltage.

High performance Li{sub 3}V{sub 2}(PO{sub 4}){sub 3}/C composite cathode material for lithium ion batteries studied in pilot scale test

Energy Technology Data Exchange (ETDEWEB)

Chen Zhenyu [School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001 (China); Dai Changsong, E-mail: changsd@hit.edu.c [School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001 (China); Wu Gang; Nelson, Mark [Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Hu Xinguo [School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001 (China); Zhang Ruoxin; Liu Jiansheng; Xia Jicai [Battery Material Business Division, Guangzhou Tinci Materials Technology Co., Ltd., Guangzhou 510760 (China)

2010-12-01

Li{sub 3}V{sub 2}(PO{sub 4}){sub 3}/C composite cathode material was synthesized via carbothermal reduction process in a pilot scale production test using battery grade raw materials with the aim of studying the feasibility for their practical applications. XRD, FT-IR, XPS, CV, EIS and battery charge-discharge tests were used to characterize the as-prepared material. The XRD and FT-IR data suggested that the as-prepared Li{sub 3}V{sub 2}(PO{sub 4}){sub 3}/C material exhibits an orderly monoclinic structure based on the connectivity of PO{sub 4} tetrahedra and VO{sub 6} octahedra. Half cell tests indicated that an excellent high-rate cyclic performance was achieved on the Li{sub 3}V{sub 2}(PO{sub 4}){sub 3}/C cathodes in the voltage range of 3.0-4.3 V, retaining a capacity of 95% (96 mAh/g) after 100 cycles at 20C discharge rate. The low-temperature performance of the cathode was further evaluated, showing 0.5C discharge capacity of 122 and 119 mAh/g at -25 and -40 {sup o}C, respectively. The discharge capacity of graphite//Li{sub 3}V{sub 2}(PO{sub 4}){sub 3} batteries with a designed battery capacity of 14 Ah is as high as 109 mAh/g with a capacity retention of 92% after 224 cycles at 2C discharge rates. The promising high-rate and low-temperature performance observed in this work suggests that Li{sub 3}V{sub 2}(PO{sub 4}){sub 3}/C is a very strong candidate to be a cathode in a next-generation Li-ion battery for electric vehicle applications.

Source of proton anisotrophy in the high-speed solar wind

International Nuclear Information System (INIS)

Schwartz, S.J.; Feldman, W.C.; Gary, S.P.

1981-01-01

Two factors which can contribute to proton anisotropy in the high-speed solar wind are investigated. We present evidence that observed proton Tperpendicular< Tparallel anisotropies are maintained locally by plasma instabilities driven by proton and helium beams. The transfer of beam energy to T/sub perpendicular/ by means of these instabilities is shown to be sufficient to account for the aforementioned proton temperature anisotropy

Rapid formation of electric field profiles in repetitively pulsed high-voltage high-pressure nanosecond discharges

International Nuclear Information System (INIS)

Ito, Tsuyohito; Kobayashi, Kazunobu; Hamaguchi, Satoshi; Czarnetzki, Uwe

2010-01-01

Rapid formation of electric field profiles has been observed directly for the first time in nanosecond narrow-gap parallel-plate discharges at near-atmospheric pressure. The plasmas examined here are of hydrogen, and the field measurement is based on coherent Raman scattering (CRS) by hydrogen molecules. Combined with the observation of spatio-temporal light emission profiles by a high speed camera, it has been found that the rapid formation of a high-voltage thin cathode sheath is accompanied by fast propagation of an ionization front from a region near the anode. Unlike well-known parallel-plate discharges at low pressure, the discharge formation process at high pressure is almost entirely driven by electron dynamics as ions and neutral species are nearly immobile during the rapid process. (fast track communication)

Control and Modeling of Push-Pull Forward Three-Level Converter for Microgrid

DEFF Research Database (Denmark)

Yao, Zhilei; Xu, Jing; Guerrero, Josep M.

2015-01-01

Renewable energy sources are widely used in microgrid. Output voltage of them is often low and varies widely. Because diodes in three-level legs in traditional three-level (TL) converter are substituted by MOSFETs, the push-pull forward (PPF) TL converter is very suitable for wide and low...

Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

2012-02-29

The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

High voltage engineering fundamentals

CERN Document Server

Kuffel, E; Hammond, P

1984-01-01

Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

High-Cycle, Push–Pull Fatigue Fracture Behavior of High-C, Si–Al-Rich Nanostructured Bainite Steel

Science.gov (United States)

Zhao, Jing; Ji, Honghong

2017-01-01

The high-cycle, push–pull fatigue fracture behavior of high-C, Si–Al-rich nanostructured bainitic steel was studied through the measurement of fatigue limits, a morphology examination and phase composition analysis of the fatigue fracture surface, as well as fractography of the fatigue crack propagation. The results demonstrated that the push–pull fatigue limits at 107 cycles were estimated as 710–889 MPa, for the samples isothermally transformed at the temperature range of 220–260 °C through data extrapolation, measured under the maximum cycle number of 105. Both the interior inclusion and the sample surface constituted the fatigue crack origins. During the fatigue crack propagation, a high amount of secondary cracks were formed in almost parallel arrangements. The apparent plastic deformation occurred in the fracture surface layer, which induced approximately all retained austenite to transform into martensite. PMID:29286325

Ionization smoke detectors - the high-voltage issues

International Nuclear Information System (INIS)

Anon.

1992-01-01

Production of high-voltage ionization smoke detectors ceased in 1978 following the development of lower voltage models which used much smaller amounts of radioactive material. Despite this fact, thousands of high-voltage detectors are still in use today in many large UK companies. The major users argue that there is no reason to stop using their detectors if they are still fit for their purpose - many could last for another 15 to 20 years if properly maintained. But pressure has been mounting on businesses to replace all their high-voltage detectors with new low-voltage models within the next couple of years. This could place a huge financial burden on the companies concerned, with costs possibly running into millions of pounds. Traditionally, the major detector installers offered cleaning and maintenance services for high-voltage detectors to their customers but these have now been withdrawn. The installers give no clear reasons for this decision except that the detectors are outmoded and should be disposed of as soon as possible. Most users would agree that conversion to low-voltage types is inevitable but their main worry is the financial strain of replacing all their detectors - and associated equipment - in one go. They would prefer to phase out their high-voltage detectors in stages over a number of years to spread the costs of conversion. The problems of maintenance is discussed. A dual voltage fire alarm panel which allows the high-voltage detectors to be phased out is mentioned. (Author)

On-site voltage measurement with capacitive sensors on high voltage systems

NARCIS (Netherlands)

Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

2011-01-01

In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

High-frequency high-voltage high-power DC-to-DC converters

Science.gov (United States)

Wilson, T. G.; Owen, H. A.; Wilson, P. M.

1982-09-01

A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

The Application of Auto-Disturbance Rejection Control Optimized by Least Squares Support Vector Machines Method and Time-Frequency Representation in Voltage Source Converter-High Voltage Direct Current System.

Science.gov (United States)

Liu, Ying-Pei; Liang, Hai-Ping; Gao, Zhong-Ke

2015-01-01

In order to improve the performance of voltage source converter-high voltage direct current (VSC-HVDC) system, we propose an improved auto-disturbance rejection control (ADRC) method based on least squares support vector machines (LSSVM) in the rectifier side. Firstly, we deduce the high frequency transient mathematical model of VSC-HVDC system. Then we investigate the ADRC and LSSVM principles. We ignore the tracking differentiator in the ADRC controller aiming to improve the system dynamic response speed. On this basis, we derive the mathematical model of ADRC controller optimized by LSSVM for direct current voltage loop. Finally we carry out simulations to verify the feasibility and effectiveness of our proposed control method. In addition, we employ the time-frequency representation methods, i.e., Wigner-Ville distribution (WVD) and adaptive optimal kernel (AOK) time-frequency representation, to demonstrate our proposed method performs better than the traditional method from the perspective of energy distribution in time and frequency plane.

The Application of Auto-Disturbance Rejection Control Optimized by Least Squares Support Vector Machines Method and Time-Frequency Representation in Voltage Source Converter-High Voltage Direct Current System.

Directory of Open Access Journals (Sweden)

Ying-Pei Liu

Full Text Available In order to improve the performance of voltage source converter-high voltage direct current (VSC-HVDC system, we propose an improved auto-disturbance rejection control (ADRC method based on least squares support vector machines (LSSVM in the rectifier side. Firstly, we deduce the high frequency transient mathematical model of VSC-HVDC system. Then we investigate the ADRC and LSSVM principles. We ignore the tracking differentiator in the ADRC controller aiming to improve the system dynamic response speed. On this basis, we derive the mathematical model of ADRC controller optimized by LSSVM for direct current voltage loop. Finally we carry out simulations to verify the feasibility and effectiveness of our proposed control method. In addition, we employ the time-frequency representation methods, i.e., Wigner-Ville distribution (WVD and adaptive optimal kernel (AOK time-frequency representation, to demonstrate our proposed method performs better than the traditional method from the perspective of energy distribution in time and frequency plane.

High voltage generator circuit with low power and high efficiency applied in EEPROM

International Nuclear Information System (INIS)

Liu Yan; Zhang Shilin; Zhao Yiqiang

2012-01-01

This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM). The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique. The high efficiency is dependent on the zero threshold voltage (V th ) MOSFET and the charge transfer switch (CTS) charge pump. The proposed high voltage generator circuit has been implemented in a 0.35 μm EEPROM CMOS process. Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits. This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation. (semiconductor integrated circuits)

Modular high voltage power supply for chemical analysis

Science.gov (United States)

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2008-07-15

A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Thermally activated phase slippage in high- T sub c grain-boundary Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Gross, R.; Chaudhari, P.; Dimos, D.; Gupta, A.; Koren, G. (IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (USA))

1990-01-08

The effect of thermally activated phase slippage (TAPS) in YBa{sub 2}Cu{sub 3}O{sub 7} grain-boundary Josephson junctions has been studied. TAPS has been found to be responsible for the dc noise voltage superimposed on the dc Josephson current near the transition temperature. Because of the reduced Josephson coupling energy of the grain-boundary junctions, which is caused by a reduced superconducting order parameter at the grain-boundary interface, TAPS is present over a considerable temperature range. The implications of TAPS on the applicability of high-{ital T}{sub {ital c}} Josephson junctions are outlined.

30 CFR 75.804 - Underground high-voltage cables.

Science.gov (United States)

2010-07-01

... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage cables. 75.804 Section...

The geometry of pull-apart basins in the southern part of Sumatran strike-slip fault zone

Science.gov (United States)

Aribowo, Sonny

2018-02-01

Models of pull-apart basin geometry have been described by many previous studies in a variety tectonic setting. 2D geometry of Ranau Lake represents a pull-apart basin in the Sumatran Fault Zone. However, there are unclear geomorphic traces of two sub-parallel overlapping strike-slip faults in the boundary of the lake. Nonetheless, clear geomorphic traces that parallel to Kumering Segment of the Sumatran Fault are considered as inactive faults in the southern side of the lake. I demonstrate the angular characteristics of the Ranau Lake and Suoh complex pull-apart basins and compare with pull-apart basin examples from published studies. I use digital elevation model (DEM) image to sketch the shape of the depression of Ranau Lake and Suoh Valley and measure 2D geometry of pull-apart basins. This study shows that Ranau Lake is not a pull-apart basin, and the pull-apart basin is actually located in the eastern side of the lake. Since there is a clear connection between pull-apart basin and volcanic activity in Sumatra, I also predict that the unclear trace of the pull-apart basin near Ranau Lake may be covered by Ranau Caldera and Seminung volcanic products.

76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

Science.gov (United States)

2011-11-15

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. AD12-5-000] Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High Voltage Grids on Thursday, December 1, 2011...

A high-efficiency low-voltage class-E PA for IoT applications in sub-1 GHz frequency range

Science.gov (United States)

Zhou, Chenyi; Lu, Zhenghao; Gu, Jiangmin; Yu, Xiaopeng

2017-10-01

We present and propose a complete and iterative integrated-circuit and electro-magnetic (EM) co-design methodology and procedure for a low-voltage sub-1 GHz class-E PA. The presented class-E PA consists of the on-chip power transistor, the on-chip gate driving circuits, the off-chip tunable LC load network and the off-chip LC ladder low pass filter. The design methodology includes an explicit design equation based circuit components values' analysis and numerical derivation, output power targeted transistor size and low pass filter design, and power efficiency oriented design optimization. The proposed design procedure includes the power efficiency oriented LC network tuning, the detailed circuit/EM co-simulation plan on integrated circuit level, package level and PCB level to ensure an accurate simulation to measurement match and first pass design success. The proposed PA is targeted to achieve more than 15 dBm output power delivery and 40% power efficiency at 433 MHz frequency band with 1.5 V low voltage supply. The LC load network is designed to be off-chip for the purpose of easy tuning and optimization. The same circuit can be extended to all sub-1 GHz applications with the same tuning and optimization on the load network at different frequencies. The amplifier is implemented in 0.13 μm CMOS technology with a core area occupation of 400 μm by 300 μm. Measurement results showed that it provided power delivery of 16.42 dBm at antenna with efficiency of 40.6%. A harmonics suppression of 44 dBc is achieved, making it suitable for massive deployment of IoT devices. Project supported by the National Natural Science Foundation of China (No. 61574125) and the Industry Innovation Project of Suzhou City of China (No. SYG201641).

High-voltage engineering and testing

CERN Document Server

Ryan, Hugh M

2013-01-01

This 3rd edition of High Voltage Engineering Testing describes strategic developments in the field and reflects on how they can best be managed. All the key components of high voltage and distribution systems are covered including electric power networks, UHV and HV. Distribution systems including HVDC and power electronic systems are also considered.

High-Cycle, Push–Pull Fatigue Fracture Behavior of High-C, Si–Al-Rich Nanostructured Bainite Steel

Directory of Open Access Journals (Sweden)

Jing Zhao

2017-12-01

Full Text Available The high-cycle, push–pull fatigue fracture behavior of high-C, Si–Al-rich nanostructured bainitic steel was studied through the measurement of fatigue limits, a morphology examination and phase composition analysis of the fatigue fracture surface, as well as fractography of the fatigue crack propagation. The results demonstrated that the push–pull fatigue limits at 107 cycles were estimated as 710–889 MPa, for the samples isothermally transformed at the temperature range of 220–260 °C through data extrapolation, measured under the maximum cycle number of 105. Both the interior inclusion and the sample surface constituted the fatigue crack origins. During the fatigue crack propagation, a high amount of secondary cracks were formed in almost parallel arrangements. The apparent plastic deformation occurred in the fracture surface layer, which induced approximately all retained austenite to transform into martensite.

Triggering and guiding high-voltage large-scale leader discharges with sub-joule ultrashort laser pulses

International Nuclear Information System (INIS)

Pepin, H.; Comtois, D.; Vidal, F.; Chien, C.Y.; Desparois, A.; Johnston, T.W.; Kieffer, J.C.; La Fontaine, B.; Martin, F.; Rizk, F.A.M.; Potvin, C.; Couture, P.; Mercure, H.P.; Bondiou-Clergerie, A.; Lalande, P.; Gallimberti, I.

2001-01-01

The triggering and guiding of leader discharges using a plasma channel created by a sub-joule ultrashort laser pulse have been studied in a megavolt large-scale electrode configuration (3-7 m rod-plane air gap). By focusing the laser close to the positive rod electrode it has been possible, with a 400 mJ pulse, to trigger and guide leaders over distances of 3 m, to lower the leader inception voltage by 50%, and to increase the leader velocity by a factor of 10. The dynamics of the breakdown discharges with and without the laser pulse have been analyzed by means of a streak camera and of electric field and current probes. Numerical simulations have successfully reproduced many of the experimental results obtained with and without the presence of the laser plasma channel

High speed atom source

International Nuclear Information System (INIS)

Hoshino, Hitoshi.

1990-01-01

In a high speed atom source, since the speed is not identical between ions and electrons, no sufficient neutralizing effect for ionic rays due to the mixing of the ionic rays and the electron rays can be obtained failing to obtain high speed atomic rays at high density. In view of the above, a speed control means is disposed for equalizing the speed of ions forming ionic rays and the speed of electrons forming electron rays. Further, incident angle of the electron rays and/or ionic rays to a magnet or an electrode is made variable. As a result, the relative speed between the ions and the electrons to the processing direction is reduced to zero, in which the probability of association between the ions and the electrons due to the coulomb force is increased to improve the neutralizing efficiency to easily obtain fine and high density high speed electron rays. Further, by varying the incident angle, a track capable of obtaining an ideal mixing depending on the energy of the neutralized ionic rays is formed. Since the high speed electron rays has such high density, they can be irradiated easily to the minute region of the specimen. (N.H.)

Tuning of the microstructure, mechanical and tribological properties of a-C:H films by bias voltage of high frequency unipolar pulse

Energy Technology Data Exchange (ETDEWEB)

Wang, Jia; Cao, Zhongyue; Pan, Fuping [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Fuguo, E-mail: fgwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Liang, Aimin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Junyan, E-mail: zhangjunyan@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2015-11-30

Highlights: • a-C:H films deposited by high frequency unipolar pulse PECVD. • The film structures can be adjusted by bias voltage. • More graphitic structures form at high bias voltage. • The mechanical and tribological properties are improved by these structures. - Abstract: Amorphous hydrogenated carbon (a-C:H) films were prepared by high frequency unipolar pulse plasma-enhanced chemical vapor deposition in CH{sub 4}, Ar, and H{sub 2} atmosphere with the bias voltage in the range of −800 –−1600 V. The microstructures and mechanical properties of a-C:H films were investigated via high resolution transmission electron microscope (HRTEM), Raman spectroscopy, and Nanoindenter. The results reveal that the curved and straight graphitic microstructures appear in amorphous carbon matrix, and their contents increase obviously with the bias voltage. At the same time, the corresponding hardness decreases and elastic recovery increases, however even in such a case films still possess excellent mechanical properties. According to the tribological property characterization, we believe that the bias voltage also influences their tribological performances significantly, the higher the bias voltage finally gets, the lower the friction coefficient and wear rate occur. These results indicate that the microstructures of a-C:H films can be tuned efficiently by bias voltage and the films with good mechanical and tribological properties can be obtained at a higher range.

High Voltage Power Transmission for Wind Energy

Science.gov (United States)

Kim, Young il

The high wind speeds and wide available area at sea have recently increased the interests on offshore wind farms in the U.S.A. As offshore wind farms become larger and are placed further from the shore, the power transmission to the onshore grid becomes a key feature. Power transmission of the offshore wind farm, in which good wind conditions and a larger installation area than an onshore site are available, requires the use of submarine cable systems. Therefore, an underground power cable system requires unique design and installation challenges not found in the overhead power cable environment. This paper presents analysis about the benefit and drawbacks of three different transmission solutions: HVAC, LCC/VSC HVDC in the grid connecting offshore wind farms and also analyzed the electrical characteristics of underground cables. In particular, loss of HV (High Voltage) subsea power of the transmission cables was evaluated by the Brakelmann's theory, taking into account the distributions of current and temperature.

Analysis of Mechanical Stresses Due to Voltage Dips in Fixed-Speed Wind Turbines

DEFF Research Database (Denmark)

Veluri, Badrinath; Santos-Martin, David; Jensen, Henrik Myhre

2011-01-01

stresses transients that may have a detrimental effect on the fatigue life of drivetrain system due to voltage dips. A rainflow cycle counting method for the stress history during the voltage dip event, analyses mean and amplitudes of the counted cycles, their occurrence moment and time of duration.......Voltage dips due to electrical grid faults generate transients of the generator electromagnetic torque which result in significant high stresses and noticeable vibrations for the wind turbine mechanical system. These events may also have a detrimental effect on the fatigue life of important...

Fringe-tunable electrothermal Fresnel mirror for use in compact and high-speed diffusion sensor.

Science.gov (United States)

Kiuchi, Yuki; Taguchi, Yoshihiro; Nagasaka, Yuji

2017-01-23

This paper reports the development of an electrothermal microelectromechanical systems (MEMS) mirror with serpentine shape actuators. A micro Fresnel mirror with fringe-spacing tunability is required to realize a compact and high-speed diffusion sensor for biological samples whose diffusion coefficient changes significantly because of a conformational change. In this case, the measurement time-constant is dependent on the fringe-spacing and diffusion coefficient of the sample. In this study, a fringe-tunable MEMS mirror with an actuation voltage less than 10 V was developed. The characteristics of the fabricated mirror were investigated experimentally. A high-visibility optical interference fringe was successfully demonstrated using both an ultranarrow-linewidth solid-state laser and a low-cost compact laser diode. The experimental results demonstrated a distinct possibility of developing a measurement device using only simple and low-voltage optical components.

August A. Pulle. 1878-1955

NARCIS (Netherlands)

Lanjouw, J.

1955-01-01

On the 28th of February 1955 Prof. Dr A. A. Pulle died at Utrecht after a long and painful illness. August Adriaan Pulle was born on the 10th of January 1878 at Arnhem, where he also attended the primary and the secundary school. During the later years at the high school his interest in plants was

High-voltage CMOS detectors

International Nuclear Information System (INIS)

Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

2016-01-01

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

High-voltage CMOS detectors

Energy Technology Data Exchange (ETDEWEB)

Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

2016-07-11

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

Dimerization of the voltage-sensing phosphatase controls its voltage-sensing and catalytic activity.

Science.gov (United States)

Rayaprolu, Vamseedhar; Royal, Perrine; Stengel, Karen; Sandoz, Guillaume; Kohout, Susy C

2018-05-07

Multimerization is a key characteristic of most voltage-sensing proteins. The main exception was thought to be the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP). In this study, we show that multimerization is also critical for Ci-VSP function. Using coimmunoprecipitation and single-molecule pull-down, we find that Ci-VSP stoichiometry is flexible. It exists as both monomers and dimers, with dimers favored at higher concentrations. We show strong dimerization via the voltage-sensing domain (VSD) and weak dimerization via the phosphatase domain. Using voltage-clamp fluorometry, we also find that VSDs cooperate to lower the voltage dependence of activation, thus favoring the activation of Ci-VSP. Finally, using activity assays, we find that dimerization alters Ci-VSP substrate specificity such that only dimeric Ci-VSP is able to dephosphorylate the 3-phosphate from PI(3,4,5)P 3 or PI(3,4)P 2 Our results indicate that dimerization plays a significant role in Ci-VSP function. © 2018 Rayaprolu et al.

Pulled Motzkin paths

International Nuclear Information System (INIS)

Janse van Rensburg, E J

2010-01-01

In this paper the models of pulled Dyck paths in Janse van Rensburg (2010 J. Phys. A: Math. Theor. 43 215001) are generalized to pulled Motzkin path models. The generating functions of pulled Motzkin paths are determined in terms of series over trinomial coefficients and the elastic response of a Motzkin path pulled at its endpoint (see Orlandini and Whittington (2004 J. Phys. A: Math. Gen. 37 5305-14)) is shown to be R(f) = 0 for forces pushing the endpoint toward the adsorbing line and R(f) = f(1 + 2cosh f))/(2sinh f) → f as f → ∞, for forces pulling the path away from the X-axis. In addition, the elastic response of a Motzkin path pulled at its midpoint is shown to be R(f) = 0 for forces pushing the midpoint toward the adsorbing line and R(f) = f(1 + 2cosh (f/2))/sinh (f/2) → 2f as f → ∞, for forces pulling the path away from the X-axis. Formal combinatorial identities arising from pulled Motzkin path models are also presented. These identities are the generalization of combinatorial identities obtained in directed paths models to their natural trinomial counterparts.

Pulled Motzkin paths

Energy Technology Data Exchange (ETDEWEB)

Janse van Rensburg, E J, E-mail: rensburg@yorku.c [Department of Mathematics and Statistics, York University, Toronto, ON, M3J 1P3 (Canada)

2010-08-20

In this paper the models of pulled Dyck paths in Janse van Rensburg (2010 J. Phys. A: Math. Theor. 43 215001) are generalized to pulled Motzkin path models. The generating functions of pulled Motzkin paths are determined in terms of series over trinomial coefficients and the elastic response of a Motzkin path pulled at its endpoint (see Orlandini and Whittington (2004 J. Phys. A: Math. Gen. 37 5305-14)) is shown to be R(f) = 0 for forces pushing the endpoint toward the adsorbing line and R(f) = f(1 + 2cosh f))/(2sinh f) {yields} f as f {yields} {infinity}, for forces pulling the path away from the X-axis. In addition, the elastic response of a Motzkin path pulled at its midpoint is shown to be R(f) = 0 for forces pushing the midpoint toward the adsorbing line and R(f) = f(1 + 2cosh (f/2))/sinh (f/2) {yields} 2f as f {yields} {infinity}, for forces pulling the path away from the X-axis. Formal combinatorial identities arising from pulled Motzkin path models are also presented. These identities are the generalization of combinatorial identities obtained in directed paths models to their natural trinomial counterparts.

Pulled Motzkin paths

Science.gov (United States)

Janse van Rensburg, E. J.

2010-08-01

In this paper the models of pulled Dyck paths in Janse van Rensburg (2010 J. Phys. A: Math. Theor. 43 215001) are generalized to pulled Motzkin path models. The generating functions of pulled Motzkin paths are determined in terms of series over trinomial coefficients and the elastic response of a Motzkin path pulled at its endpoint (see Orlandini and Whittington (2004 J. Phys. A: Math. Gen. 37 5305-14)) is shown to be R(f) = 0 for forces pushing the endpoint toward the adsorbing line and R(f) = f(1 + 2cosh f))/(2sinh f) → f as f → ∞, for forces pulling the path away from the X-axis. In addition, the elastic response of a Motzkin path pulled at its midpoint is shown to be R(f) = 0 for forces pushing the midpoint toward the adsorbing line and R(f) = f(1 + 2cosh (f/2))/sinh (f/2) → 2f as f → ∞, for forces pulling the path away from the X-axis. Formal combinatorial identities arising from pulled Motzkin path models are also presented. These identities are the generalization of combinatorial identities obtained in directed paths models to their natural trinomial counterparts.

Computer controlled high voltage system

Energy Technology Data Exchange (ETDEWEB)

Kunov, B; Georgiev, G; Dimitrov, L [and others

1996-12-31

A multichannel computer controlled high-voltage power supply system is developed. The basic technical parameters of the system are: output voltage -100-3000 V, output current - 0-3 mA, maximum number of channels in one crate - 78. 3 refs.

A new soft switched push pull current fed converter for fuel cell applications

International Nuclear Information System (INIS)

Delshad, Majid; Farzanehfard, Hosein

2011-01-01

In this paper a new zero voltage switching current fed push pull dc-dc converter is proposed for fuel cell generation system. The auxiliary circuit in this converter, not only absorbs the voltage surge across the switches at turn off instance, but also provides zero voltage switching condition for all converter switches. Therefore, the converter efficiency is increased and size and weight of the converter can be decreased. Also implementation of control circuit is very simple since the converter is PWM controlled. In this paper, the proposed dc-dc converter operating modes are analyzed and to verify the converter operation a laboratory prototype is implemented and the experimental results are presented.

DC dynamic pull-in instability of a dielectric elastomer balloon: an energy-based approach

Science.gov (United States)

Sharma, Atul Kumar; Arora, Nitesh; Joglekar, M. M.

2018-03-01

This paper reports an energy-based method for the dynamic pull-in instability analysis of a spherical dielectric elastomer (DE) balloon subjected to a quasi-statically applied inflation pressure and a Heaviside step voltage across the balloon wall. The proposed technique relies on establishing the energy balance at the point of maximum stretch in an oscillation cycle, followed by the imposition of an instability condition for extracting the threshold parameters. The material models of the Ogden family are employed for describing the hyperelasticity of the balloon. The accuracy of the critical dynamic pull-in parameters is established by examining the saddle-node bifurcation in the transient response of the balloon obtained by integrating numerically the equation of motion, derived using the Euler-Lagrange equation. The parametric study brings out the effect of inflation pressure on the onset of the pull-in instability in the DE balloon. A quantitative comparison between the static and dynamic pull-in parameters at four different levels of the inflation pressure is presented. The results indicate that the dynamic pull-in instability gets triggered at electric fields that are lower than those corresponding to the static instability. The results of the present investigation can find potential use in the design and development of the balloon actuators subjected to transient loading. The method developed is versatile and can be used in the dynamic instability analysis of other conservative systems of interest.

Characterization of Si sub 1 sub - sub x Ge sub x thin films prepared by sputtering

CERN Document Server

Noguchi, T

2000-01-01

By bombarding solid targets, we deposited Si sub 1 sub - sub x Ge sub x thin films by sputtering without using inflammable CVD (chemical vapor deposition) gases. After the B sup + -implanted Si sub 1 sub - sub x Ge sub x films were thermally annealed, they were characterized. As the content of Ge increased, the refractive index increased and the band edge narrowed. The higher the annealing temperature, the lower the resistivity. For Si sub 1 sub - sub x Ge sub x films with a high Ge content (X approx 0.5), the flat-band voltage of the gate deduced from C-V curve was adjusted to the middle point between p sup + and n sup + polySi gates. Boron-doped SiGe films are promising gate materials for MOS (metal oxide semiconductor) and SOI (silicon on insulator) transistors driven at low driving voltage.

High speed low power optical detection of sub-wavelength scatterer

NARCIS (Netherlands)

Roy, S.; Bouwens, M.A.J.; Wei, L.; Pereira, S.F.; Urbach, H.P.; Walle, P. van der

2015-01-01

Optical detection of scatterers on a flat substrate, generally done using dark field microscopy technique, is challenging since it requires high power illumination to obtain sufficient SNR (Signal to Noise Ratio) to be able to detect sub-wavelength particles. We developed a bright field technique,

High voltage high brightness electron accelerators with MITL voltage adder coupled to foilless diodes

International Nuclear Information System (INIS)

Mazarakis, M.G.; Poukey, J.W.; Frost, C.A.; Shope, S.L.; Halbleib, J.A.; Turman, B.N.

1993-01-01

During the last ten years the authors have extensively studied the physics and operation of magnetically-immersed electron foilless diodes. Most of these sources were utilized as injectors to high current, high energy linear induction accelerators such as those of the RADLAC family. Recently they have experimentally and theoretically demonstrated that foilless diodes can be successfully coupled to self-magnetically insulated transmission line voltage adders to produce very small high brightness, high definition (no halo) electron beams. The RADLAC/SMILE experience opened the path to a new approach in high brightness, high energy induction accelerators. There is no beam drifting through the device. The voltage addition occurs in a center conductor, and the beam is created at the high voltage end in an applied magnetic field diode. This work was motivated by the remarkable success of the HERMES-III accelerator and the need to produce small radius, high energy, high current electron beams for air propagation studies and flash x-ray radiography. In this paper they present experimental results compared with analytical and numerical simulations in addition to design examples of devices that can produce multikiloamp electron beams of as high as 100 MV energies and radii as small as 1 mm

Voltage spike detection in high field superconducting accelerator magnets

Energy Technology Data Exchange (ETDEWEB)

Orris, D.F.; Carcagno, R.; Feher, S.; Makulski, A.; Pischalnikov, Y.M.; /Fermilab

2004-12-01

A measurement system for the detection of small magnetic flux changes in superconducting magnets, which are due to either mechanical motion of the conductor or flux jump, has been developed at Fermilab. These flux changes are detected as small amplitude, short duration voltage spikes, which are {approx}15mV in magnitude and lasts for {approx}30 {micro}sec. The detection system combines an analog circuit for the signal conditioning of two coil segments and a fast data acquisition system for digitizing the results, performing threshold detection, and storing the resultant data. The design of the spike detection system along with the modeling results and noise analysis will be presented. Data from tests of high field Nb{sub 3}Sn magnets at currents up to {approx}20KA will also be shown.

Development of parallel-plate-based MEMS tunable capacitors with linearized capacitance–voltage response and extended tuning range

International Nuclear Information System (INIS)

Shavezipur, M; Nieva, P; Khajepour, A; Hashemi, S M

2010-01-01

This paper presents a design technique that can be used to linearize the capacitance–voltage (C–V) response and extend the tuning range of parallel-plate-based MEMS tunable capacitors beyond that of conventional designs. The proposed technique exploits the curvature of the capacitor's moving electrode which could be induced by either manipulating the stress gradients in the plate's material or using bi-layer structures. The change in curvature generates a nonlinear structural stiffness as the moving electrode undergoes out-of-plane deformation due to the actuation voltage. If the moving plate curvature is tailored such that the capacitance increment is proportional to the voltage increment, then a linear C–V response is obtained. The larger structural resistive force at higher bias voltage also delays the pull-in and increases the maximum tunability of the capacitor. Moreover, for capacitors containing an insulation layer between the two electrodes, the proposed technique completely eliminates the pull-in effect. The experimental data obtained from different capacitors fabricated using PolyMUMPs demonstrate the advantages of this design approach where highly linear C–V responses and tunabilities as high as 1050% were recorded. The design methodology introduced in this paper could be easily extended to for example, capacitive pressure and temperature sensors or infrared detectors to enhance their response characteristics.

Workload balancing capability of pull systems in MTO production

NARCIS (Netherlands)

Germs, R.; Riezebos, J.

2010-01-01

Pull systems focusing on throughput time control and applicable in situations with high variety and customisation are scarce. This paper compares three unit-based pull systems that can cope with such situations: POLCA, CONWIP and m-CONWIP. These systems control the shop floor throughput time of

Plasma Perturbations in High-Speed Probing of Hall Thruster Discharge Chambers: Quantification and Mitigation

Science.gov (United States)

Jorns, Benjamin A.; Goebel, Dan M.; Hofer, Richard R.

2015-01-01

An experimental investigation is presented to quantify the effect of high-speed probing on the plasma parameters inside the discharge chamber of a 6-kW Hall thruster. Understanding the nature of these perturbations is of significant interest given the importance of accurate plasma measurements for characterizing thruster operation. An array of diagnostics including a high-speed camera and embedded wall probes is employed to examine in real time the changes in electron temperature and plasma potential induced by inserting a high-speed reciprocating Langmuir probe into the discharge chamber. It is found that the perturbations onset when the scanning probe is downstream of the electron temperature peak, and that along channel centerline, the perturbations are best characterized as a downstream shift of plasma parameters by 15-20% the length of the discharge chamber. A parametric study is performed to investigate techniques to mitigate the observed probe perturbations including varying probe speed, probe location, and operating conditions. It is found that the perturbations largely disappear when the thruster is operated at low power and low discharge voltage. The results of this mitigation study are discussed in the context of recommended methods for generating unperturbed measurements of the discharge chamber plasma.

Voltage Balancing Method on Expert System for 51-Level MMC in High Voltage Direct Current Transmission

Directory of Open Access Journals (Sweden)

Yong Chen

2016-01-01

Full Text Available The Modular Multilevel Converters (MMC have been a spotlight for the high voltage and high power transmission systems. In the VSC-HVDC (High Voltage Direct Current based on Voltage Source Converter transmission system, the energy of DC link is stored in the distributed capacitors, and the difference of capacitors in parameters and charge rates causes capacitor voltage balance which affects the safety and stability of HVDC system. A method of MMC based on the expert system for reducing the frequency of the submodules (SMs of the IGBT switching frequency is proposed. Firstly, MMC with 51 levels for HVDC is designed. Secondly, the nearest level control (NLC for 51-level MMC is introduced. Thirdly, a modified capacitor voltage balancing method based on expert system for MMC-based HVDC transmission system is proposed. Finally, a simulation platform for 51-level Modular Multilevel Converter is constructed by using MATLAB/SIMULINK. The results indicate that the strategy proposed reduces the switching frequency on the premise of keeping submodule voltage basically identical, which greatly reduces the power losses for MMC-HVDC system.

Tubular bending and pull-out forces in high-curvature well bores

International Nuclear Information System (INIS)

Dareing, D.W.; Ahlers, C.A.

1991-01-01

This paper is concerned with drag forces developed on tubulars in high-curvature well bores typically found in drainhole and horizontal drilling. The dog-leg severity of these types of boreholes are considerably higher than those typically found in conventional directional drilling. The objective of the study was to determine the significance of bending stiffness on drag forces in the pull-out mode. The method of analysis treats the tubular as a multi-spanned curved beam under tension and solves for radial displacements, slope, shear and bending moment over each span. Calculations show that bending stiffness is a minor factor provided there are no locally severe dog legs superimposed in the high-curvature well bore

Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

CERN Document Server

Kum, B H; Shin, M W; Park, J D

1999-01-01

This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

High voltage designing of 300.000 Volt

International Nuclear Information System (INIS)

Hutapea, Sumihar.

1978-01-01

Some methods of designing a.c and d.c high voltage supplies are discussed. A high voltage supply for the Gama Research Centre accelerator is designed using transistor pulse generators. High voltage transformers being made using radio transistor ferrits as a core are also discussed. (author)

Pulled elbow in children.

Science.gov (United States)

Yamanaka, Syunsuke; Goldman, Ran D

2018-06-01

Question Our practice is seeing children with relatively minor injuries to their elbows, with a history of "swinging" them when their hands are being held to cross the road. Nothing is usually found on a physical examination. I know that this is likely a "pulled elbow." Can we manage this in the clinic setting rather than sending the family to the emergency department? What would be the best course of action in the clinic setting? Answer Pulled elbow, also called nursemaid's elbow , is a radial head subluxation caused by axial traction or a sudden pull of the extended pronated arm, and it is a very common phenomenon. The practice of swinging children while holding their hands should be abandoned. In the case of pulled elbow, the child usually avoids moving the affected arm, holding it close to his or her body, without considerable pain, and no obvious swelling or deformity can be seen. While a fracture should be excluded, pulled elbow can usually be identified based on this presentation. The reduction procedure can easily be done in the office setting, with an 80% success rate and no complications. The hyperpronation maneuver (holding the elbow at 90° and then firmly pronating the wrist) to reduce pulled elbow has been found to be better than a supination-flexion maneuver (holding the elbow at 90° with one hand, supinating and flexing the elbow rapidly with the other) and should be exercised first. When 2 trials of reduction are unsuccessful, the child's arm should be splinted and the family should be sent for further evaluation. Copyright© the College of Family Physicians of Canada.

30 CFR 75.813 - High-voltage longwalls; scope.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage longwalls; scope. 75.813 Section... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813 High-voltage longwalls; scope. Sections 75.814 through 75.822 of this...

Adaptive Supply Voltage Management for Low Power Logic Circuitry Operating at Subthreshold

OpenAIRE

Rehan Ahmed

2015-01-01

With the rise in demand of portable hand held devices and with the rise in application of wireless sensor networks and RFID reduction of total power consumption has become a necessity. To save power we operate the logic circuitry of our devices at sub-threshold. In sub-threshold the drain current is exponentially dependent on the threshold voltage hence the threshold variation causes profound variation of ION and IOFF the ratio of which affect the speed of a circuit drastically. S...

High frequency relay protection channels on super high voltage lines

Energy Technology Data Exchange (ETDEWEB)

Mikutskii, G V

1964-08-01

General aspects of high voltage transmission line design are discussed. The relationships between line voltage and length and line dimensions and power losses are explained. Electrical interference in the line is classified under three headings: interference under normal operating conditions, interference due to insulation faults, and interference due to variations in operating conditions of the high-voltage network.

Biomechanical study of the final push-pull in archery.

Science.gov (United States)

Leroyer, P; Van Hoecke, J; Helal, J N

1993-02-01

The purpose of this study was to analyse archery performance among eight archers of different abilities by means of displacement pull-hand measurements during the final push-pull phase of the shoot. The archers showed an irregular displacement negatively related to their technical level. Displacement signal analysis showed high power levels in both the 0-5 Hz and 8-12 Hz ranges. The latter peak corresponds to electromyographic tremor observed during a prolonged push-pull effort. The results are discussed in relation to some potentially helpful training procedures such as biofeedback and strength conditioning.

Power system integration and control of variable speed wind turbines

Energy Technology Data Exchange (ETDEWEB)

Eek, Jarle

2009-12-15

A wind power plant is a highly dynamic system that dependent on the type of technology requires a number of automatic control loops. This research deals with modelling, control and analysis related to power system integration of variable speed, pitch controlled wind turbines. All turbine components have been modelled and implemented in the power system simulation program SIMPOW, and a description of the modelling approach for each component is given. The level of model detail relates to the classical modelling of power system components for power system stability studies, where low frequency oscillations are of special importance. The wind turbine model includes a simplified representation of the developed rotor torque and the thrust force based on C{sub p-} and C{sub t} characteristic curves. The mechanical system model represents the fundamental torsional mode and the first mode of blades and tower movements. Two generator technologies have been investigated. The doubly fed induction generator (DFIG) and the stator converter interfaced permanent magnet synchronous generator (PMSG). A simplified model of a 2 level voltage source converter is used for both machine types. The generator converter controllers have been given special attention. All model components are linearized for the purpose of control system design and power system interaction related to small signal stability analysis. Different control strategies discussed in the literature have been investigated with regard to power system interaction aspects. All control parameters are identified using the internal model control approach. The analysis is focused on three main areas: 1. Identification of low damped oscillatory modes. This is carried out by the establishment and discussion of wind turbine modelling. 2. Interaction between control loops. A systematic approach is presented in order to analyse the influence of control loops used in variable speed wind turbines. 3.Impact on power system performance

Impact of distributed generators on the power loss and voltage profile of sub-transmission network

Directory of Open Access Journals (Sweden)

A.S.O. Ogunjuyigbe

2016-05-01

Full Text Available This paper presents the impact of distributed generator (DG on the power loss and voltage profile of sub-transmission network at different penetration levels (PLs. The various DG technologies are modeled based on their electrical output characteristics. Voltage profile index which allows a single value to represent how well the voltage matches the ideal value is developed. The index allows a fair comparison of the voltage profile obtained from different scenarios. The extent to which DGs affect power losses and voltage profile depend on the type of DG technology, PL and the location in which the DG is connected to the grid. The integration of DGs reduces power losses on the network, however, as the PL increases, the power losses begin to increase. A PL of 50–75% is achieved on 69 kV voltage level and 25–50% penetration on 13.8 kV voltage level without an increase in the power loss. Also more DG can be integrated into the network at point of common connection of higher voltage level compared to the low voltage level.

The Architecture Design of Detection and Calibration System for High-voltage Electrical Equipment

Science.gov (United States)

Ma, Y.; Lin, Y.; Yang, Y.; Gu, Ch; Yang, F.; Zou, L. D.

2018-01-01

With the construction of Material Quality Inspection Center of Shandong electric power company, Electric Power Research Institute takes on more jobs on quality analysis and laboratory calibration for high-voltage electrical equipment, and informationization construction becomes urgent. In the paper we design a consolidated system, which implements the electronic management and online automation process for material sampling, test apparatus detection and field test. In the three jobs we use QR code scanning, online Word editing and electronic signature. These techniques simplify the complex process of warehouse management and testing report transferring, and largely reduce the manual procedure. The construction of the standardized detection information platform realizes the integrated management of high-voltage electrical equipment from their networking, running to periodic detection. According to system operation evaluation, the speed of transferring report is doubled, and querying data is also easier and faster.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

Voltage control of a variable speed wind turbine connected to an isolated load: Experimental study

International Nuclear Information System (INIS)

Masmoudi, Abdelkarim; Krichen, Lotfi; Ouali, Abderrazak

2012-01-01

Highlights: ► We develop an experimental test bench of a wind energy conversion system. ► A DC motor is emulating a variable speed wind turbine using a DS1104 card. ► The production unit is supplying a three-phase load. ► A voltage control is established in order to regulate the DC bus voltage and the line-to-line voltages. - Abstract: This study is interested in the development of an experimental test bench of an autonomous wind energy conversion system (WECS) based on a permanent magnet synchronous generator (PMSG). After the description of the test bench, the elements constituting the WECS are presented. Then, a real time model implemented under a digital signal processor (DSP) system is established. The first objective of this work is to validate the functionality of the test bench leading to experiment some principles developed in theory. The second objective is to control the load connection voltages and the DC bus voltage. For the first control, two resonant controllers are used and for the second one, a dump load, connected to the DC bus, offers the possibility to maintain a balance between production and consumption in spite of wind fluctuations and load variations. The experimental results show the effectiveness of the test bench trying out in real time the behavior of a WECS supplying an isolated load.

Design and measurements of a fast high-voltage pulse generator for the MedAustron Low Energy Transfer line fast deflector

CERN Document Server

Fowler, T; Mueller, F; Kramer, T; Stadlbauer, T

2012-01-01

MedAustron, a centre for ion-therapy and research, will comprise an accelerator facility based on a synchrotron for the delivery of protons and light ions for cancer treatment. The Low Energy Beam Transfer line (LEBT) to the synchrotron contains an electrostatic fast deflector (EFE) which, when energized, deviates the continuous beam arriving from the ion source onto a Faraday Cup: the specified voltage is ±3.5 kV. De-energizing the EFE for variable pulse durations from 500 ns up to d.c. allows beam passage for multi-turn injection into the synchrotron. To maintain beam quality in the synchrotron, the EFE pulse generator requires rise and fall times of less than 300 ns between 90 % of peak voltage and a ±1 V level. To achieve this, a pulsed power supply (PKF), with high voltage MOSFET switches connected in a push-pull configuration, will be mounted in close proximity to the deflector itself. A fast, large dynamic range monitoring circuit will verify switching to the ±1 V level and subsequent flat bottom pu...

Laparoscopic-assisted vaginal pull-through: A new approach for congenital adrenal hyperplasia patients with high urogenital sinus

Directory of Open Access Journals (Sweden)

Jacques Birraux

2015-01-01

Full Text Available Background: To open vaginal cavity to the pelvic floor is part of surgical treatment for urogenital sinus (UGS in girls with congenital adrenal hyperplasia (CAH. For high UGS, this operative procedure can be challenging and may jeopardise urinary continence. Combined perineal and laparoscopic approaches could be useful to minimise perineal dissection and to facilitate the vaginal lowering. Patients and Methods: We report the procedure of a laparoscopic-assisted vaginal pull-through for supra-sphincteric UGS in a 5-year-old girl with CAH. Laparoscopic dissection of the vagina from the posterior wall of the bladder and urethra, division of the confluence and vaginal pull-through to the perineum are described. Discussion: The technique is derived from laparoscopic-assisted treatment for high ano-rectal malformations. Compared with current procedures for treatment for high UGS, laparoscopic-assisted approach allows mobilising vagina with minimal dissection of perineum and complete preservation of urethra. Another major advantage is to provide a direct vision for dissection of the space between rectum and urethra prior to vaginal pull-through. Conclusion: Laparoscopic-assisted vaginal pull-through appears to be an interesting approach for high UGS in CAH patients, reducing dissection and risk of urinary incontinence. This new approach needs to be strengthened by other cases.

CMOS continuous-time adaptive equalizers for high-speed serial links

CERN Document Server

Gimeno Gasca, Cecilia; Aldea Chagoyen, Concepción

2015-01-01

This book introduces readers to the design of adaptive equalization solutions integrated in standard CMOS technology for high-speed serial links. Since continuous-time equalizers offer various advantages as an alternative to discrete-time equalizers at multi-gigabit rates, this book provides a detailed description of continuous-time adaptive equalizers design - both at transistor and system levels-, their main characteristics and performances. The authors begin with a complete review and analysis of the state of the art of equalizers for wireline applications, describing why they are necessary, their types, and their main applications. Next, theoretical fundamentals of continuous-time adaptive equalizers are explored. Then, new structures are proposed to implement the different building blocks of the adaptive equalizer: line equalizer, loop-filters, power comparator, etc.  The authors demonstrate the design of a complete low-power, low-voltage, high-speed, continuous-time adaptive equalizer. Finally, a cost-...

Vivitron 1995, transient voltage simulation, high voltage insulator tests, electric field calculation

International Nuclear Information System (INIS)

Frick, G.; Osswald, F.; Heusch, B.

1996-01-01

Preliminary investigations showed clearly that, because of the discrete electrode structure of the Vivitron, important overvoltage leading to insulator damage can appear in case of a spark. The first high voltage tests showed damage connected with such events. This fact leads to a severe voltage limitation. This work describes, at first, studies made to understand the effects of transients and the associated over-voltage appearing in the Vivitron. Then we present the high voltage tests made with full size Vivitron components using the CN 6 MV machine as a pilot machine. Extensive field calculations were made. These involve simulations of static stresses and transient overvoltages, on insulating boards and electrodes. This work gave us the solutions for arrangements and modifications in the machine. After application, the Vivitron runs now without any sparks and damage at 20 MV. In the same manner, we tested column insulators of a new design and so we will find out how to get to higher voltages. Electric field calculation around the tie bars connecting the discrete electrodes together showed field enhancements when the voltages applied on the discrete electrodes are not equally distributed. This fact is one of the sources of discharges and voltage limitations. A scenario of a spark event is described and indications are given how to proceed towards higher voltages, in the 30 MV range. (orig.)

High-Speed Ultracam Colorimetry of the Subdwarf B Star SDSS J171722.08+58055.8

NARCIS (Netherlands)

Aerts, C.C.; Jeffery, C.S.; Dhillon, V.S.; Marsh, T.R.; Groot, P.J.

2006-01-01

We present high-speed multicolour photometry of the faint sub-dwarf B star SDSS J171722.08+58055.8 (m<SUB>B=16.7SUB>mag), which was recently discovered to be pulsating. The data were obtained during two consecutive nights in 2004 August using the three-channel photometer Ultracam attached to the

THE FUZZY LOGIC BASED POWER INJECTION INTO ROTOR CIRCUIT FOR INSTANTANEOUS HIGH TORQUE AND SPEED CONTROL IN INDUCTION MACHINES

Directory of Open Access Journals (Sweden)

Selami KESLER

2009-01-01

Full Text Available The power flow of the rotor circuit is controlled by different methods in induction machines used for producing high torque in applications involved great power and constant output power with constant frequency in wind turbines. The voltage with slip frequency can be applied on rotor windings to produce controlled high torque and obtain optimal power factor and speed control. In this study, firstly, the dynamic effects of the voltage applying on rotor windings through the rings in slip-ring induction machines are researched and undesirable aspects of the method are exposed with simulations supported by experiments. Afterwards, a fuzzy logic based inverter model on rotor side is proposed with a view to improving the dynamic effects, controlling high torque producing and adjusting machine speed in instantaneous forced conditions. For the simulation model of the system in which the stator side is directly connected to the grid in steady state operation, a C/C++ algorithm is developed and the results obtained for different load conditions are discussed.

High speed capacitor-inverter based carbon nanotube full adder.

Science.gov (United States)

Navi, K; Rashtian, M; Khatir, A; Keshavarzian, P; Hashemipour, O

2010-03-18

Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.

Reliability of high-voltage pulse capacitors operating in large energy storages

International Nuclear Information System (INIS)

Kuchinskij, G.S.; Fedorova, V.S.; Shilin, O.V.

1982-01-01

To improve the reliability of pulse capacitors operating in capacitive energy storages, processes, resulting in break-down of capacitor insulation were investigated. A statistic model of failures was constructed and reliability of real capacitors, functioning at operating electric intensity Usub(oper) equal 70 kV/mm and at elevated intensity 90 kV/mm was calculated. Results of testing the IK50-ZU4 capacitor are given. The form of the capacitor service life distribution function was specified. To provide and confirm the assigned capacitor reliability, it is necessary to speed up tests at a higher voltage (1.3-1.5) Usub(oper). To improve the capacitor reliability, it is advisable to conduct acceptance tests, which include hold at increased constant voltage (1.3-1.5) Usub(oper) during 1-3 min and the effect of pulses of increased voltage (1.2-1.3) Usub(oper) with the pulse shape corresponding to operating conditions

High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

Science.gov (United States)

Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

2012-05-07

This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

Optical pulling of airborne absorbing particles and smut spores over a meter-scale distance with negative photophoretic force

Energy Technology Data Exchange (ETDEWEB)

Lin, Jinda; Hart, Adam G.; Li, Yong-qing, E-mail: liy@ecu.edu [Department of Physics, East Carolina University, Greenville, North Carolina 27858-4353 (United States)

2015-04-27

We demonstrate optical pulling of single light-absorbing particles and smut spores in air over a meter-scale distance using a single collimated laser beam based on negative photophoretic force. The micron-sized particles are pulled towards the light source at a constant speed of 1–10 cm/s in the optical pulling pipeline while undergoing transverse rotation at 0.2–10 kHz. The pulled particles can be manipulated and precisely positioned on the entrance window with an accuracy of ∼20 μm, and their chemical compositions can be characterized with micro-Raman spectroscopy.

Voltage control of a power-frequency E-beam irradiator

International Nuclear Information System (INIS)

Zhou Zhizhong; Hu Shouming; Wang Jun; Guo Honglei; Su Haijun

2012-01-01

Voltage stability and precision are key specifications of an electron beam irradiator. A voltage control system was developed for smooth high voltage regulating on a power frequency electron accelerator. Pillar variac driven by servo motor was used as the regulating device, with a programmable logic controller as the control unit. An industrial PC was employed to realize human-machine interaction. Open-loop and closed-loop modes were employed to regulate the high voltage. Experimental results show that the speed, stability and precision for high voltage regulating were improved greatly, hence a much better performance of the electron accelerator. (authors)

High voltage electricity installations a planning perspective

CERN Document Server

Jay, Stephen Andrew

2006-01-01

The presence of high voltage power lines has provoked widespread concern for many years. High Voltage Electricity Installations presents an in-depth study of policy surrounding the planning of high voltage installations, discussing the manner in which they are percieved by the public, and the associated environmental issues. An analysis of these concerns, along with the geographical, environmental and political influences that shape their expression, is presented. Investigates local planning policy in an area of the energy sector that is of highly topical environmental and public concern Cover

Improvement of high voltage cycling performance and thermal stability of lithium-ion cells by use of a thiophene additive

Energy Technology Data Exchange (ETDEWEB)

Lee, Ki-Soo; Sun, Yang-Kook; Kim, Dong-Won [Department of Chemical Engineering, Hanyang University, Seungdong-gu, Seoul 133-791 (Korea); Noh, Jaegeun [Department of Chemistry, Hanyang University, Seungdong-gu, Seoul 133-791 (Korea); Song, Kwang Soup [Advanced Medical Device Center, Korea Electrotechnology, Research Institute, Ansan, Gyeonggi-do 426-170 (Korea)

2009-10-15

This study demonstrates that the addition of thiophene improves the cycle life of lithium-ion cells at high voltage. Electrochemical impedance spectroscopy results suggest that addition of thiophene significantly suppresses the increase of the charge transfer resistance that occurs during cycling up to high voltage. Differential scanning calorimetric studies showed that the thermal stability of fully charged LiCoO{sub 2} cathode was also enhanced in the presence of thiophene. (author)

Monolithic, High-Speed Fiber-Optic Switching Array for Lidar

Science.gov (United States)

Suckow, Will; Roberts, Tony; Switzer, Gregg; Terwilliger, Chelle

2011-01-01

Current fiber switch technologies use mechanical means to redirect light beams, resulting in slow switch time, as well as poor reliability due to moving parts wearing out quickly at high speeds. A non-mechanical ability to switch laser output into one of multiple fibers within a fiber array can provide significant power, weight, and costs savings to an all-fiber system. This invention uses an array of crystals that act as miniature prisms to redirect light as an electric voltage changes the prism s properties. At the heart of the electro-optic fiber-optic switch is an electro- optic crystal patterned with tiny prisms that can deflect the beam from the input fiber into any one of the receiving fibers arranged in a linear array when a voltage is applied across the crystal. Prism boundaries are defined by a net dipole moment in the crystal lattice that has been poled opposite to the surrounding lattice fabricated using patterned, removable microelectrodes. When a voltage is applied across the crystal, the resulting electric field changes the index of refraction within the prism boundaries relative to the surrounding substrate, causing light to deflect slightly according to Snell s Law. There are several materials that can host the necessary monolithic poled pattern (including, but not limited to, SLT, KTP, LiNbO3, and Mg:LiNbO3). Be cause this is a solid-state system without moving parts, it is very fast, and does not wear down easily. This invention is applicable to all fiber networks, as well as industries that use such networks. The unit comes in a compact package, can handle both low and high voltages, and has a high reliability (100,000 hours without maintenance).

Coronal holes and high-speed wind streams

International Nuclear Information System (INIS)

Zirker, J.B.

1977-01-01

Coronal holes low have been identified as Bartel's M regions, i.e., sources of high-speed wind streams that produce recurrent geomagnetic variations. Throughout the Skylab period the polar caps of the Sun were coronal holes, and at lower latitudes the most persistent and recurrent holes were equatorial extensions of the polar caps. The holes rotated 'rigidly' at the equatorial synodic rate. They formed in regions of unipolar photospheric magnetic field, and their internal magnetic fields diverged rapidly with increasing distance from the sun. The geometry of the magnetic field in the inner corona seems to control both the physical properties of the holes and the global distribution of high-speed wind streams in the heliosphere. The latitude variation of the divergence of the coronal magnetic field lines produces corresponding variations in wind speed.During the years of declining solar activity the global field of the corona approximates a perturbed dipole. The divergence of field lines in each hemisphere produces a high-speed wind near the poles and low-speed wind in a narrow belt that coincides with the magnetic neutral sheet. The analysis of electron density measurements within a polar hole indicates that solar wind is accelerated principally in the region between 2 and 5 R/sub s/ and that mechanical wave pressure (possibly Alfven wave) may be responsible for the accleration of the wind. Phenomenological models for the birth and decay of coronal holes have been proposed. Attempts to explain the birth and rigid rotation of holes through dynamo action have been only partially successful. The 11-year variation of cosmic ray intensities at the earth may result from cyclic variation of open field regions associated with coronal holes

Compact sub-nanosecond pulse seed source with diode laser driven by a high-speed circuit

Science.gov (United States)

Wang, Xiaoqian; Wang, Bo; Wang, Junhua; Cheng, Wenyong

2018-06-01

A compact sub-nanosecond pulse seed source with 1550 nm diode laser (DL) was obtained by employing a high-speed circuit. The circuit mainly consisted of a short pulse generator and a short pulse driver. The short pulse generator, making up of a complex programmable logic device (CPLD), a level translator, two programmable delay chips and an AND gate chip, output a triggering signal to control metal-oxide-semiconductor field-effect transistor (MOSFET) switch of the short pulse driver. The MOSFET switch with fast rising time and falling time both shorter than 1 ns drove the DL to emit short optical pulses. Performances of the pulse seed source were tested. The results showed that continuously adjustable repetition frequency ranging from 500 kHz to 100 MHz and pulse duration in the range of 538 ps to 10 ns were obtained, respectively. 537 μW output was obtained at the highest repetition frequency of 100 MHz with the shortest pulse duration of 538 ps. These seed pulses were injected into an fiber amplifier, and no optical pulse distortions were found.

Application of magnetically insulated transmission lines for high current, high voltage electron beam accelerators

Science.gov (United States)

Shope, S. L.; Mazarakis, M. G.; Frost, C. A.; Poukey, J. W.; Turman, B. N.

Self Magnetically Insulated Transmission Lines (MITL) adders were used successfully in a number of Sandia accelerators such as HELIA, HERMES III, and SABRE. Most recently we used at MITL adder in the RADLAC/SMILE electron beam accelerator to produce high quality, small radius (r(sub rho) less than 2 cm), 11 - 15 MeV, 50 - 100-kA beams with a small transverse velocity v(perpendicular)/c = beta(perpendicular) less than or equal to 0.1. In RADLAC/SMILE, a coaxial MITL passed through the eight, 2 MV vacuum envelopes. The MITL summed the voltages of all eight feeds to a single foilless diode. The experimental results are in good agreement with code simulations. Our success with the MITL technology led us to investigate the application to higher energy accelerator designs. We have a conceptual design for a cavity-fed MITL that sums the voltages from 100 identical, inductively-isolated cavities. Each cavity is a toroidal structure that is driven simultaneously by four 8-ohm pulse-forming lines, providing a 1-MV voltage pulse to each of the 100 cavities. The point design accelerator is 100 MV, 500 kA, with a 30 - 50 ns FWHM output pulse.

High voltage holding in the negative ion sources with cesium deposition

Energy Technology Data Exchange (ETDEWEB)

Belchenko, Yu.; Abdrashitov, G.; Ivanov, A.; Sanin, A.; Sotnikov, O., E-mail: O.Z.Sotnikov@inp.nsk.su [Budker Institute of Nuclear Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation)

2016-02-15

High voltage holding of the large surface-plasma negative ion source with cesium deposition was studied. It was found that heating of ion-optical system electrodes to temperature >100 °C facilitates the source conditioning by high voltage pulses in vacuum and by beam shots. The procedure of electrode conditioning and the data on high-voltage holding in the negative ion source with small cesium seed are described. The mechanism of high voltage holding improvement by depletion of cesium coverage is discussed.

Insulation co-ordination in high-voltage electric power systems

CERN Document Server

Diesendorf, W

2015-01-01

Insulation Co-ordination in High-Voltage Electric Power Systems deals with the methods of insulation needed in different circumstances. The book covers topics such as overvoltages and lightning surges; disruptive discharge and withstand voltages; self-restoring and non-self-restoring insulation; lightning overvoltages on transmission lines; and the attenuation and distortion of lightning surges. Also covered in the book are topics such as the switching surge designs of transmission lines, as well as the insulation coordination of high-voltage stations. The text is recommended for electrical en

Nonlinear electrokinetics at large voltages

Energy Technology Data Exchange (ETDEWEB)

Bazant, Martin Z [Department of Chemical Engineering and Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Sabri Kilic, Mustafa; Ajdari, Armand [Department of Mathematics, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Storey, Brian D [Franklin W Olin College of Engineering, Needham, MA 02492 (United States)], E-mail: bazant@mit.edu

2009-07-15

The classical theory of electrokinetic phenomena assumes a dilute solution of point-like ions in chemical equilibrium with a surface whose double-layer voltage is of order the thermal voltage, k{sub B}T/e=25 mV. In nonlinear 'induced-charge' electrokinetic phenomena, such as ac electro-osmosis, several volts {approx}100k{sub B}T/e are applied to the double layer, and the theory breaks down and cannot explain many observed features. We argue that, under such a large voltage, counterions 'condense' near the surface, even for dilute bulk solutions. Based on simple models, we predict that the double-layer capacitance decreases and the electro-osmotic mobility saturates at large voltages, due to steric repulsion and increased viscosity of the condensed layer, respectively. The former suffices to explain observed high-frequency flow reversal in ac electro-osmosis; the latter leads to a salt concentration dependence of induced-charge flows comparable to experiments, although a complete theory is still lacking.

A high speed low power low offset dynamic comparator used in SHA-less pipelined ADC

Science.gov (United States)

Shubin, Liu; Zhangming, Zhu; Yintang, Yang; Lianxi, Liu

2014-05-01

A novel fully differential high speed high resolution low offset CMOS dynamic comparator has been implemented in the SMIC 0.18 μm process used for a sample-and-hold amplifier (SHA)-less pipelined analog-to-digital converters (ADC). Based on the analysis and optimization between delay time and offset, an enhanced reset architecture with transmission gate was introduced to speed up the comparison and reset procedure. Four inputs with two cross coupled differential pairs, reconstituted bias circuit for tail current transistor and common centroid layouts make the comparator more robust against mismatch and process variations. The simulation results demonstrate that the proposed design achieves 1 mV sensitivity at 2.2 GHz sampling rate with a power consumption of 510 μW, while the mean offset voltage is equal to 10.244 mV.

A differential low-voltage high gain current-mode integrated RF receiver front-end

Energy Technology Data Exchange (ETDEWEB)

Wang Chunhua; Ma Minglin; Sun Jingru; Du Sichun; Guo Xiaorong; He Haizhen, E-mail: wch1227164@sina.com [School of Information Science and Technology, Hunan University, Changsha 410082 (China)

2011-02-15

A differential low-voltage high gain current-mode integrated RF front end for an 802.11b WLAN is proposed. It contains a differential transconductance low noise amplifier (G{sub m}-LNA) and a differential current-mode down converted mixer. The single terminal of the G{sub m}-LNA contains just one MOS transistor, two capacitors and two inductors. The gate-source shunt capacitors, C{sub x1} and C{sub x2}, can not only reduce the effects of gate-source C{sub gs} on resonance frequency and input-matching impedance, but they also enable the gate inductance L{sub g1,2} to be selected at a very small value. The current-mode mixer is composed of four switched current mirrors. Adjusting the ratio of the drain channel sizes of the switched current mirrors can increase the gain of the mixer and accordingly increase the gain of RF receiver front-end. The RF front-end operates under 1 V supply voltage. The receiver RFIC was fabricated using a chartered 0.18 {mu}m CMOS process. The integrated RF receiver front-end has a measured power conversion gain of 17.48 dB and an input referred third-order intercept point (IIP3) of -7.02 dBm. The total noise figure is 4.5 dB and the power is only 14 mW by post-simulations. (semiconductor integrated circuits)

A High-Voltage Level Tolerant Transistor Circuit

NARCIS (Netherlands)

Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

2001-01-01

A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

High Voltage Seismic Generator

Science.gov (United States)

Bogacz, Adrian; Pala, Damian; Knafel, Marcin

2015-04-01

This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

Voltage generators of high voltage high power accelerators

International Nuclear Information System (INIS)

Svinin, M.P.

1981-01-01

High voltage electron accelerators are widely used in modern radiation installations for industrial purposes. In the near future further increasing of their power may be effected, which enables to raise the efficiency of the radiation processes known and to master new power-consuming production in industry. Improvement of HV generators by increasing their power and efficiency is one of many scientific and engineering aspects the successful solution of which provides further development of these accelerators and their technical parameters. The subject is discussed in detail. (author)

High-speed micro-electro-discharge machining.

Energy Technology Data Exchange (ETDEWEB)

Chandrasekar, Srinivasan Dr. (.School of Industrial Engineering, West Lafayette, IN); Moylan, Shawn P. (School of Industrial Engineering, West Lafayette, IN); Benavides, Gilbert Lawrence

2005-09-01

When two electrodes are in close proximity in a dielectric liquid, application of a voltage pulse can produce a spark discharge between them, resulting in a small amount of material removal from both electrodes. Pulsed application of the voltage at discharge energies in the range of micro-Joules results in the continuous material removal process known as micro-electro-discharge machining (micro-EDM). Spark erosion by micro-EDM provides significant opportunities for producing small features and micro-components such as nozzle holes, slots, shafts and gears in virtually any conductive material. If the speed and precision of micro-EDM processes can be significantly enhanced, then they have the potential to be used for a wide variety of micro-machining applications including fabrication of microelectromechanical system (MEMS) components. Toward this end, a better understanding of the impacts the various machining parameters have on material removal has been established through a single discharge study of micro-EDM and a parametric study of small hole making by micro-EDM. The main avenues for improving the speed and efficiency of the micro-EDM process are in the areas of more controlled pulse generation in the power supply and more controlled positioning of the tool electrode during the machining process. Further investigation of the micro-EDM process in three dimensions leads to important design rules, specifically the smallest feature size attainable by the process.

A 600kV 15mA Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage

International Nuclear Information System (INIS)

Su Tongling; Zhang Yimin; Chen Shangwen; Liu Yantong; Lv Huiyi; Liu Jiangtao

2006-01-01

A Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage has been developed. This power supply has been operated in a ns pulse neutron generator. The maximum non-load voltage is 600kV while the working voltage and load current are 550kV and 15mA, respectively. The tested results indicate that when the power supply is operated at 300kV, 6.7mA and the input voltage varies +/-10%, the long-term stability of the output voltage is S=(0.300-1.006)x10 -3 . The ripple voltage is δU P-P =6.2V at 300kV, 6.8-8.3mA and the ratio of δU P-P to the output voltage V H is δU P-P /V H =2.1x10 -5

Development of Electromechanical Architectures for AC Voltage Metrology

Directory of Open Access Journals (Sweden)

Alexandre BOUNOUH

2010-12-01

Full Text Available This paper presents results of work undertaken for exploring MEMS capabilities to fabricate AC voltage references for electrical metrology and high precision instrumentation through the mechanical-electrical coupling in MEMS. From first MEMS test structures previously realized, a second set of devices with improved characteristics has been developed and fabricated with Silicon on Insulator (SOI Surface Micromachining process. These MEMS exhibit pull-in voltages of 5 V and 10 V to match with the best performance of the read-out electronics developed for driving the MEMS. Deep Level Transient Spectroscopy measurements carried out on the new design show resonance frequencies of about only some kHz, and the stability of the MEMS output voltage measured at 100 kHz has been found very promising for the best samples where the relative deviation from the mean value over almost 12 hours showed a standard deviation of about 6.3 ppm.

Modeling the effect of intermolecular force on the size-dependent pull-in behavior of beam-type NEMS using modified couple stress theory

Energy Technology Data Exchange (ETDEWEB)

Beni, Yaghoub Tadi; Karimipour, Iman [Shahrekord University, Shahrekord (Iran, Islamic Republic of); Abadyan, Mohamadreza [Islamic Azad University, Shahrekord (Iran, Islamic Republic of)

2014-09-15

Experimental observations reveal that the physical response of nano structures is size-dependent. Herein, modified couple stress theory has been used to study the effect of intermolecular van der Waals force on the size dependent pull-in of nano bridges and nano cantilevers. Three approaches including using differential transformation method, applying numerical method and developing a simple lumped parameter model have been employed to solve the governing equation of the systems. The pull-in parameters i.e. critical tip deflection and instability voltage of the nano structures have been determined. Effect of the van der Waals attraction and the size dependency and the importance of coupling between them on the pull-in performance have been discussed.

Modeling the effect of intermolecular force on the size-dependent pull-in behavior of beam-type NEMS using modified couple stress theory

International Nuclear Information System (INIS)

Beni, Yaghoub Tadi; Karimipour, Iman; Abadyan, Mohamadreza

2014-01-01

Experimental observations reveal that the physical response of nano structures is size-dependent. Herein, modified couple stress theory has been used to study the effect of intermolecular van der Waals force on the size dependent pull-in of nano bridges and nano cantilevers. Three approaches including using differential transformation method, applying numerical method and developing a simple lumped parameter model have been employed to solve the governing equation of the systems. The pull-in parameters i.e. critical tip deflection and instability voltage of the nano structures have been determined. Effect of the van der Waals attraction and the size dependency and the importance of coupling between them on the pull-in performance have been discussed.

Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

2015-08-28

In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

Physicochemical assessment criteria for high-voltage pulse capacitors

Energy Technology Data Exchange (ETDEWEB)

Darian, L. A., E-mail: LDarian@rambler.ru; Lam, L. Kh. [National Research University, Moscow Power Engineering Institute (Russian Federation)

2016-12-15

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

Physicochemical assessment criteria for high-voltage pulse capacitors

International Nuclear Information System (INIS)

Darian, L. A.; Lam, L. Kh.

2016-01-01

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

Import-push or Export-pull?

DEFF Research Database (Denmark)

Jäkel, Ina Charlotte

2014-01-01

predictions regarding the export market and the role of product differentiation. Empirical results for a sample of Danish manufacturing industries confirm the import- "push" hypothesis as well as the export- "pull" hypothesis, but also reveal differences across industries. The selection effect of trade...... is mainly driven by the "import-push" if product differentiation is high, whereas it is driven by the "export-pull" if goods are homogeneous....

Import-push or Export-pull?

DEFF Research Database (Denmark)

Jäkel, Ina Charlotte

predictions regarding the export market and the role of product differentiation. Empirical results for a sample of Danish manufacturing industries confirm the import-"push" hypothesis as well as the export-"pull" hypothesis, but also reveal differences across industries. The selection effect of trade...... is mainly driven by the "import-push" if product differentiation is high, whereas it is driven by the "export-pull" if goods are homogeneous....

Field evaluation of a push-pull system to reduce malaria transmission.

Directory of Open Access Journals (Sweden)

David J Menger

Full Text Available Malaria continues to place a disease burden on millions of people throughout the tropics, especially in sub-Saharan Africa. Although efforts to control mosquito populations and reduce human-vector contact, such as long-lasting insecticidal nets and indoor residual spraying, have led to significant decreases in malaria incidence, further progress is now threatened by the widespread development of physiological and behavioural insecticide-resistance as well as changes in the composition of vector populations. A mosquito-directed push-pull system based on the simultaneous use of attractive and repellent volatiles offers a complementary tool to existing vector-control methods. In this study, the combination of a trap baited with a five-compound attractant and a strip of net-fabric impregnated with micro-encapsulated repellent and placed in the eaves of houses, was tested in a malaria-endemic village in western Kenya. Using the repellent delta-undecalactone, mosquito house entry was reduced by more than 50%, while the traps caught high numbers of outdoor flying mosquitoes. Model simulations predict that, assuming area-wide coverage, the addition of such a push-pull system to existing prevention efforts will result in up to 20-fold reductions in the entomological inoculation rate. Reductions of such magnitude are also predicted when mosquitoes exhibit a high resistance against insecticides. We conclude that a push-pull system based on non-toxic volatiles provides an important addition to existing strategies for malaria prevention.

Pulling G Human Responses to High and Low Gravity

CERN Document Server

Seedhouse, Erik

2013-01-01

Formula 1 racing drivers, figher pilots, astronauts - G forces are an integral part of their lives - How do racing drivers sustain high G loads and not pass out? - What accelerative forces are unleashed when a fighter pilot ejects from a high-performance jet? - What is it like being launched into space and what are the effects on astronauts living in zero G on board the International Space Station? - How do aircraft simulate zero G? Pulling G gives a unique insight into how G forces affect people working inthe high and low G environments. It examines the risks of high and low acceleration and explains the physiology of surviving in these environments. The history of G-related research is described, together with present-day and future development of methods to cope with the effects of increased and reduced G.

Spherical expanding flames in H{sub 2}-N{sub 2}O-Ar mixtures: flame speed measurements and kinetic modeling

Energy Technology Data Exchange (ETDEWEB)

Mevel, R.; Dupre, G.; Paillard, C.-E. [Institut de Combustion, Aerothermique, Reactivite et Environnement (ICARE) Centre National de la Recherche Scientifique (CNRS), Orleans (France); University of Orleans (France); Lafosse, F.; Chaumeix, N. [Institut de Combustion, Aerothermique, Reactivite et Environnement (ICARE) Centre National de la Recherche Scientifique (CNRS), Orleans (France)

2009-11-15

Although ignition of hydrogen-nitrous oxide mixtures is a serious issue for nuclear waste storage and semi-conductor manufacturing, available flame speed data have not been recently updated and thermodiffusive stability is not known. In order to palliate this, the flame speed of a hydrogen-nitrous oxide mixture diluted in Ar (60% mol) was measured in a spherical bomb as a function of equivalence ratio. The initial pressure and temperature were held constant around ambient conditions. It is shown that the unstretched flame speed of the hydrogen-nitrous oxide mixture is relatively low for a hydrogen-based mixture, with a maximum of 56 cm/s for the stoichiometric condition. Further, hydrogen-nitrous oxide-argon flames appear unstable with respect to thermodiffusive effects at an equivalence ratio of 1. The downward flammability limit of hydrogen-nitrous oxide-argon was observed for hydrogen content of 8 mol%. The modeling of these experimental data has been performed with three recently developed models. All kinetic schemes give satisfactory predictions of the experimentally observed data. Sensitivity and reaction pathway analysis have demonstrated that the dynamic of the system is dominated by the reaction N{sub 2}O + H = N{sub 2} + OH which governs the rate of energy release. (author)

Invited review article: high-speed flexure-guided nanopositioning: mechanical design and control issues.

Science.gov (United States)

Yong, Y K; Moheimani, S O R; Kenton, B J; Leang, K K

2012-12-01

Recent interest in high-speed scanning probe microscopy for high-throughput applications including video-rate atomic force microscopy and probe-based nanofabrication has sparked attention on the development of high-bandwidth flexure-guided nanopositioning systems (nanopositioners). Such nanopositioners are designed to move samples with sub-nanometer resolution with positioning bandwidth in the kilohertz range. State-of-the-art designs incorporate uniquely designed flexure mechanisms driven by compact and stiff piezoelectric actuators. This paper surveys key advances in mechanical design and control of dynamic effects and nonlinearities, in the context of high-speed nanopositioning. Future challenges and research topics are also discussed.

Trichotillomania (Hair-Pulling Disorder)

Science.gov (United States)

... pulling Biting, chewing or eating pulled-out hair Playing with pulled-out hair or rubbing it across ... of trichotillomania: Family history. Genetics may play a role in the development of trichotillomania, and the disorder ...

Input-output analysis of high-speed axisymmetric isothermal jet noise

Science.gov (United States)

Jeun, Jinah; Nichols, Joseph W.; Jovanović, Mihailo R.

2016-04-01

We use input-output analysis to predict and understand the aeroacoustics of high-speed isothermal turbulent jets. We consider axisymmetric linear perturbations about Reynolds-averaged Navier-Stokes solutions of ideally expanded turbulent jets with jet Mach numbers 0.6 parabolized stability equations (PSE), and this mode dominates the response. For subsonic jets, however, the singular values indicate that the contributions of sub-optimal modes to noise generation are nearly equal to that of the optimal mode, explaining why the PSE do not fully capture the far-field sound in this case. Furthermore, high-fidelity large eddy simulation (LES) is used to assess the prevalence of sub-optimal modes in the unsteady data. By projecting LES source term data onto input modes and the LES acoustic far-field onto output modes, we demonstrate that sub-optimal modes of both types are physically relevant.

High Efficiency Power Converter for Low Voltage High Power Applications

DEFF Research Database (Denmark)

Nymand, Morten

The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based......, and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often...

Time isolation high-voltage impulse generator

International Nuclear Information System (INIS)

Chodorow, A.M.

1975-01-01

Lewis' high-voltage impulse generator is analyzed in greater detail, demonstrating that voltage between adjacent nodes can be equalized by proper selection of parasitic impedances. This permits improved TEM mode propagation to a matched load, with more faithful source waveform preservation

Discussion - a high voltage DC generator

International Nuclear Information System (INIS)

Bhagwat, P.V.; Singh, Jagir; Hattangadi, V.A.

1993-01-01

One of the requirements for a high power ion source is a high voltage, high current DC generator. The high voltage, high current generator, DISCATRON, presently under development in our laboratory is a rotating disc type electrostatic generator similar in design to the one reported by A. Isoya et al. (1985). It is compact and rugged electrostatic DC generator based on the principle of induction charging by pellet chains used in the pelletron accelerator. It is, basically, a constant-current device with little stored energy, so that, in case of a breakdown, damage to the equipment connected to the output terminals is minimal. Since the present generator is only a proto-type, meant for a study of the practical difficulties that would be encountered in its manufacture, the output voltage and current specified has been kept quite modest viz., 300 kV at 500 μA, maximum. Some results of the preliminary tests carried out with this generator are described. (author). 4 figs

Reducing Heating In High-Speed Cinematography

Science.gov (United States)

Slater, Howard A.

1989-01-01

Infrared-absorbing and infrared-reflecting glass filters simple and effective means for reducing rise in temperature during high-speed motion-picture photography. "Hot-mirror" and "cold-mirror" configurations, employed in projection of images, helps prevent excessive heating of scenes by powerful lamps used in high-speed photography.

Simulation and optimization of a polymer directional coupler electro-optic switch with push pull electrodes

Science.gov (United States)

Zheng, Chuan-Tao; Ma, Chun-Sheng; Yan, Xin; Wang, Xian-Yin; Zhang, Da-Ming

2008-07-01

Structural model and design technique are proposed for a polymer directional coupler electro-optic switch with rib waveguides and push-pull electrodes, of which the electric field distribution is analyzed by the conformal transforming method and image method. In order to get the minimum mode loss and the minimum switching voltage, the parameters of the waveguide and electrode are optimized, such as the core with, core thickness, buffer layer between the core and the electrode, coupling gap between the waveguides, electrode thickness, electrode width and electrode gap. Switching Characteristics are analyzed, which include the output power, insertion loss, and crosstalk. To realize normal switching function, the fabrication error, spectrum shift, and coupling loss between a single mode fiber (SMF) and the waveguide are discussed. Simulation results show that the coupling length is 3082 μm, push-pull switching voltage is 2.14 V, insertion loss is less than 1.17 dB, and crosstalk is less than -30 dB for the designed device.

Application of high voltage electric field (HVEF) drying technology in potato chips

International Nuclear Information System (INIS)

Bai, Yaxiang; Shi, Hua; Yang, Yaxin

2013-01-01

In order to improve the drying efficiency and qualities of vegetable by high voltage electric field (HVEF), potato chips as a representative of vegetable was dried using a high voltage electric drying systems at 20°C. The shrinkage rate, water absorption and rehydration ratio of dried potato chips were measured. The results indicated that the drying rate of potato chips was significantly improved in the high voltage electric drying systems. The shrinkage rate of potato chips dried by high voltage electric field was 1.1% lower than that by oven drying method. And the rehydration rate of high voltage electric field was 24.6% higher than that by oven drying method. High voltage electric field drying is very advantageous and can be used as a substitute for traditional drying method.

Energetic optimization of regenerative braking for high speed railway systems

International Nuclear Information System (INIS)

Frilli, Amedeo; Meli, Enrico; Nocciolini, Daniele; Pugi, Luca; Rindi, Andrea

2016-01-01

Highlights: • A model of longitudinal dynamics of the High-speed train ETR1000 is presented. • The model includes on board traction and braking subsystems. • Interactions between overhead line and power line are modelled. • The model is validated on real experimental data. • An energy storage strategy for a high-speed line is proposed. - Abstract: The current development trend in the railway field has led to an ever increasing interest for the energetic optimization of railway systems (especially considering the braking phases), with a strong attention to the mutual interactions between the loads represented by railway vehicles and the electrical infrastructure, including all the sub-systems related to distribution and smart energy management such as energy storage systems. In this research work, the authors developed an innovative coupled modelling approach suitable for the analysis of the energetic optimization of railway systems and based on the use of the new object oriented language Matlab-Simscape™, which presents several advantages with respect to conventional modelling tools. The proposed model has been validated considering an Italian Direct Current High-speed line and the High-speed train ETR 1000. Furthermore, the model has been used to perform an efficiency analysis, considering the use of energy storage devices. The results obtained with the developed model show that the use of energy recovery systems in high-speed railway can provide great opportunities of energy savings.

High-Speed Scanning Interferometer Using CMOS Image Sensor and FPGA Based on Multifrequency Phase-Tracking Detection

Science.gov (United States)

Ohara, Tetsuo

2012-01-01

A sub-aperture stitching optical interferometer can provide a cost-effective solution for an in situ metrology tool for large optics; however, the currently available technologies are not suitable for high-speed and real-time continuous scan. NanoWave s SPPE (Scanning Probe Position Encoder) has been proven to exhibit excellent stability and sub-nanometer precision with a large dynamic range. This same technology can transform many optical interferometers into real-time subnanometer precision tools with only minor modification. The proposed field-programmable gate array (FPGA) signal processing concept, coupled with a new-generation, high-speed, mega-pixel CMOS (complementary metal-oxide semiconductor) image sensor, enables high speed (>1 m/s) and real-time continuous surface profiling that is insensitive to variation of pixel sensitivity and/or optical transmission/reflection. This is especially useful for large optics surface profiling.

High-speed photoacoustic imaging using an LED-based photoacoustic imaging system

Science.gov (United States)

Sato, Naoto; Kuniyil Ajith Singh, Mithun; Shigeta, Yusuke; Hanaoka, Takamitsu; Agano, Toshitaka

2018-02-01

Recently we developed a multispectral LED-based photoacoustic/ultrasound imaging system (AcousticX) and have been continuously working on its technical/functional improvements. AcousticX is a linear array ultrasound transducer (128 elements, 10 MHz)-based system in which LED arrays (selectable wavelengths, pulse repetition frequency: 4 kHz, pulse width: tunable from 40 - 100 ns) are fixed on both sides of the transducer to illuminate the tissue for photoacoustic imaging. The ultrasound/photoacoustic data from all 128 elements can be simultaneously acquired, processed and displayed. We already demonstrated our system's capability to perform photoacoustic/ultrasound imaging for dynamic imaging of the tissue at a frame rate of 10 Hz (for example to visualize the pulsation of arteries in vivo in human subjects). In this work, we present the development of a new high-speed imaging mode in AcousticX. In this mode, instead of toggling between ultrasound and photoacoustic measurements, it is possible to continuously acquire only photoacoustic data for 1.5 seconds with a time interval of 1 ms. With this improvement, we can record photoacoustic signals from the whole aperture (38 mm) at fast rate and can be reviewed later at different speeds for analyzing dynamic changes in the photoacoustic signals. We believe that AcousticX with this new high-speed mode opens up a feasible technical path for multiple dynamic studies, for example one which focus on imaging the response of voltage sensitive dyes. We envisage to improve the acquisition speed further in future for exploring ultra-high-speed applications.

Stabilization of Voltage Parameters of Induction Generator Excited by a Voltage Inverter

Directory of Open Access Journals (Sweden)

Padalko D.A.

2017-12-01

Full Text Available The article reveals the operational aspects of induction generator. Methods for stabilization of induction generator (IG parameters under inverter excitation are investigated. The study was carried out using mathematical description and simulation modeling in MATLAB Simulink. The paper provides analysis of causes of generated voltage amplitude and frequency displacement when the loading condition and the rate vary. Due to the parametric resonance nature of IG self-excitation, the author introduces the expression that allows estimating the capacitor capacitance required to maintain the generation process, depending on the rotor speed of electric machine, load nature and rate. Based on the studies, it was proved that it is possible to stabilize the IG voltage parameters by maintaining the magnetizing circuit inductance Lm at the constant level., and realizing a control law close to U/f = const. The study proves that using the inverter together with the voltage regulator allows ensuring the quality of electricity corresponding to modern standards. The necessity of problem solving of the required quality of the voltage by the harmonic component for the exciter - inverter with PWM is shown. The prospects of the power generation system based on induction machine (IM with a semiconductor frequency converter, which serves as an adjustable supplier of capacitive current for IM for autonomous objects, are substantiated. The use of semiconductor frequency converters makes it possible to provide high stability of the output voltage parameters and good speed of the mechatronic generation system with an asynchronous machine.

All high T sub c edge junctions and SQUIDs

Energy Technology Data Exchange (ETDEWEB)

Laibowitz, R.B.; Koch, R.H.; Gupta, A.; Koren, G.; Gallagher, W.J.; Foglietti, V.; Oh, B.; Viggiano, J.M. (IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598 (US))

1990-02-12

We present the first observations of superconducting quantum interference in multilevel, all high {ital T}{sub {ital c}}, lithographically patterned edge junction structures. The current-voltage characteristics are nonhysteretic and have well-defined critical currents. The dynamic resistance is independent of current above the critical current. These devices show periodic sensitivity to magnetic fields and low levels of magnetic hysteresis up to temperatures around 60 K.

A new approach to voltage sag detection based on wavelet transform

Energy Technology Data Exchange (ETDEWEB)

Gencer, Oezguer; Oeztuerk, Semra; Erfidan, Tarik [Kocaeli University, Faculty of Engineering, Department of Electrical Engineering, Veziroglu Kampuesue, Eski Goelcuek Yolu, Kocaeli (Turkey)

2010-02-15

In this work, a new voltage sag detection method based on wavelet transform is developed. Voltage sag detection algorithms, so far have proved their efficiency and computational ability. Using several windowing techniques take long computational times for disturbance detection. Also researchers have been working on separating voltage sags from other voltage disturbances for the last decade. Due to increasing power quality standards new high performance disturbance detection algorithms are necessary to obtain high power quality standards. For this purpose, the wavelet technique is used for detecting voltage sag duration and magnitude. The developed voltage sag detection algorithm is implemented with high speed microcontroller. Test results show that, the new approach provides very accurate and satisfactory voltage sag detection. (author)

Electroluminescence in quantum well heterostructures p-Al{sub x}Ga{sub 1-x}As/GaAs{sub 1-y}P{sub y}/n-Al{sub x}Ga{sub 1-x}As under uniaxial stress

Energy Technology Data Exchange (ETDEWEB)

Berman, Irina V. [Physics Department, San Jose State University, CA (United States); Bogdanov, Evgeniy V.; Minina, Natalia Ya.; Shirokov, Stanislav S.; Yunovich, Alexander E. [Physics Department, Lomonosov Moscow State University (Russian Federation); Kissel, Heiko [R and D Department, DILAS Diodenlaser GmbH, (Germany)

2009-03-15

We present new results on the influence of uniaxial stress up to P=4 kbar on the electroluminescence spectra and current-voltage characteristics of p-Al{sub x}Ga{sub 1-x}As/GaAs{sub 1-y}P{sub y}/n-Al{sub x}Ga{sub 1-x}As double heterostructures usually used in TM emitting 808 nm high-power diode lasers. With increasing stress, the emission spectra demonstrate a blue shift of up to 25 meV at a pressure of P=4 kbar, while the electroluminescence intensity increases under compression. The different behavior of the current-voltage characteristics under uniaxial stress along[110] and[1 anti 10] directions is mainly determined by the arising piezoelectric field. The results are also discussed in terms of changes in the band structure under uniaxial compression. The construction of the cryostat for optical measurements under uniaxial stress at liquid nitrogen temperature is described in the paper. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Large modification in insulator-metal transition of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001) by high energy ion irradiation in biased reactive sputtering

Energy Technology Data Exchange (ETDEWEB)

Azhan, Nurul Hanis; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Ohtsubo, Yoshiyuki; Kimura, Shin-ichi [Graduate School of Frontier Biosciences, Osaka University, Suita 565-0871 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont, 37200 Tours (France)

2016-02-07

High energy ion irradiation in biased reactive sputtering enabled significant modification of insulator-metal transition (IMT) properties of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001). Even at a high biasing voltage with mean ion energy of around 325 eV induced by the rf substrate biasing power of 40 W, VO{sub 2} film revealed low IMT temperature (T{sub IMT}) at 309 K (36 °C) together with nearly two orders magnitude of resistance change. Raman measurements from −193 °C evidenced that the monoclinic VO{sub 2} lattice begins to transform to rutile-tetragonal lattice near room temperature. Raman spectra showed the in-plane compressive stress in biased VO{sub 2} films, which results in shortening of V–V distance along a-axis of monoclinic structure, a{sub M}-axis (c{sub R}-axis) and thus lowering the T{sub IMT}. In respect to that matter, significant effects in shortening the in-plane axis were observed through transmission electron microscopy observations. V2p{sub 3/2} spectra from XPS measurements suggested that high energy ion irradiation also induced oxygen vacancies and resulted for an early transition onset and rather broader transition properties. Earlier band gap closing against the temperature in VO{sub 2} film with higher biasing power was also probed by ultraviolet photoelectron spectroscopy. Present results with significant modification of IMT behavior of films deposited at high-energy ion irradiation with T{sub IMT} near the room temperature could be a newly and effective approach to both exploring mechanisms of IMT and further applications of this material, due to the fixed deposition conditions and rather thicker VO{sub 2} films.

Combustion of Shock-Dispersed Flake Aluminum - High-Speed Visualization

Energy Technology Data Exchange (ETDEWEB)

Neuwald, P; Reichenbach, H; Kuhl, A

2006-06-19

Charges of 0.5 g PETN were used to disperse 1 g of flake aluminum in a rectangular test chamber of 4 liter inner volume and inner dimensions of approximately 10 cm x 10 cm x 40 cm. The subsequent combustion of the flake aluminum with the ambient air in the chamber gave rise to a highly luminous flame. The evolution of the luminous region was studied by means of high-speed cinematography. The high-speed camera is responsive to a broad spectral range in the visible and near infra-red. For a number of tests this response range was narrowed down by means of a band-pass filter with a center wavelength of 488 nm and a half-width of 23 nm. The corresponding images were expected to have a stronger temperature dependence than images obtained without the filter, thus providing better capability to highlight hot-spots. Emission in the range of the pass-band of the filter can be due to continuous thermal radiation from hot Al and Al{sub 2}O{sub 3} particles or to molecular band emission from gaseous AlO. A time-resolving spectrometer was improvised to inspect this topic. The results suggest that AlO emission occurs, but that the continuous spectrum is the dominating effect in our experiments.

Microparticles in high-voltage accelerator tubes

International Nuclear Information System (INIS)

Griffith, G.L.; Eastham, D.A.

1979-01-01

Microparticles with radii greater than 2 μm have been observed in a high voltage vacuum accelerator tube. The charge acquired by most of the particles is similar to the contact charging of a conducting sphere on a plane. (author)

Nested high voltage generator/particle accelerator

International Nuclear Information System (INIS)

Adler, R.J.

1992-01-01

This patent describes a modular high voltage particle accelerator having an emission axis and an emission end, the accelerator. It comprises: a plurality of high voltage generators in nested adjacency to form a nested stack, each the generator comprising a cup-like housing having a base and a tubular sleeve extending from the base, a primary transformer winding encircling the nested stack; a secondary transformer winding between each adjacent pair of housings, magnetically linked to the primary transformer winding through the gaps; a power supply respective to each of the secondary windings converting alternating voltage from its respective secondary winding to d.c. voltage, the housings at the emission end forming a hollow throat for particle acceleration, a vacuum seal at the emission end of the throat which enables the throat to be evacuated; a particle source in the thrond power means to energize the primary transformer winding

Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Energy Technology Data Exchange (ETDEWEB)

Freedsman, J. J., E-mail: freedy54@gmail.com; Watanabe, A.; Urayama, Y. [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, T., E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

2015-09-07

The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

High voltage investigations for ITER coils

International Nuclear Information System (INIS)

Fink, S.; Fietz, W.H.

2006-01-01

The superconducting ITER magnets will be excited with high voltage during operation and fast discharge. Because the coils are complex systems the internal voltage distribution can differ to a large extent from the ideal linear voltage distribution. In case of fast excitations internal voltages between conductor and radial plate of a TF coil can be even higher than the terminal voltage of 3.5 kV to ground which appears during a fast discharge without a fault. Hence the determination of the transient voltage distribution is important for a proper insulation co-ordination and will provide a necessary basis for the verification of the individual insulation design and the choice of test voltages and waveforms. Especially the extent of internal overvoltages in case of failures, e. g. malfunction of discharge units and / or arcing is of special interest. Transient calculations for the ITER TF coil system have been performed for fast discharge and fault scenarios to define test voltages for ITER TF. The conductor and radial plate insulation of the ITER TF Model Coil were exposed at room temperature to test voltages derived from the results from these calculations. Breakdown appeared during the highest AC voltage step. A fault scenario for the TF fast discharge system is presented where one fault triggers a second fault, leading to considerable voltage stress. In addition a FEM model of Poloidal Field Coil 3 for the determination of the parameters of a detailed network model is presented in order to prepare detailed investigations of the transient voltage behaviour of the PF coils. (author)

High gain, low noise, fully complementary logic inverter based on bi-layer WSe{sub 2} field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Das, Saptarshi; Roelofs, Andreas [Center for Nanoscale Material, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Dubey, Madan [U.S. Army Research Laboratory, Adelphi, Maryland 20783 (United States)

2014-08-25

In this article, first, we show that by contact work function engineering, electrostatic doping and proper scaling of both the oxide thickness and the flake thickness, high performance p- and n-type WSe{sub 2} field effect transistors (FETs) can be realized. We report record high drive current of 98 μA/μm for the electron conduction and 110 μA/μm for the hole conduction in Schottky barrier WSe{sub 2} FETs. Then, we combine high performance WSe{sub 2} PFET with WSe{sub 2} NFET in double gated transistor geometry to demonstrate a fully complementary logic inverter. We also show that by adjusting the threshold voltages for the NFET and the PFET, the gain and the noise margin of the inverter can be significantly enhanced. The maximum gain of our chemical doping free WSe{sub 2} inverter was found to be ∼25 and the noise margin was close to its ideal value of ∼2.5 V for a supply voltage of V{sub DD} = 5.0 V.

Foot placement strategy in pushing and pulling.

Science.gov (United States)

Lee, Tzu-Hsien

2018-01-01

Pushing and pulling tasks are very common in daily and industrial workplaces. They are one major source of musculoskeletal complaints. This study aimed to examine the foot placement strategy while pushing and pulling. Thirteen young males and ten young females were recruited as participants. A two (pushing and pulling) by four (48 cm, 84 cm, 120 cm, and 156 cm) factorial design was used. Exertion direction and exertion height significantly affected foot placement strategy. Pushing task needed more anteroposterior space than pulling task. The percentages of female/male for trailing foot position ranged from 77% to 90% (pushing) and from 80% to 93% (pulling) across the exertion heights. Practitioners should provide an anteroposterior space approximately to 70% body stature for workers to exert their maximum pulling and pushing strengths.

Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

Science.gov (United States)

Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

Advances in high voltage insulation and arc interruption in SF6 and vacuum

CERN Document Server

Maller, V N

1982-01-01

Advances in High Voltage Insulation and Arc Interruption in SF6 and Vacuum deals with high voltage breakdown and arc extinction in sulfur hexafluoride (SF6) and high vacuum, with special emphasis on the application of these insulating media in high voltage power apparatus and devices. The design and developmental aspects of various high voltage power apparatus using SF6 and high vacuum are highlighted. This book is comprised of eight chapters and opens with a discussion on electrical discharges in SF6 and high vacuum, along with the properties and handling of SF6 gas. The following chapters fo

Highly efficient tandem OLED based on C{sub 60}/rubrene: MoO{sub 3} as charge generation layer and LiF/Al as electron injection layer

Energy Technology Data Exchange (ETDEWEB)

Liu, Yang [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); College of Science, Tianjin University of Technology, Tianjin 300384 (China); Wu, Xiaoming, E-mail: wxm@tjut.edu.cn [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); Xiao, Zhihui; Gao, Jian; Zhang, Juan; Rui, Hongsong; Lin, Xin; Zhang, Nan; Hua, Yulin [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China); Yin, Shougen, E-mail: sgyin@tjut.edu.cn [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin 300384 (China); Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin 300384 (China)

2017-08-15

Highlights: • Highly efficient blue fluorescent tandem OLEDs are fabricated. • The optimal tandem OLED consists of C{sub 60}/rubrene: MoO{sub 3} as a CGL and LiF/Al as an EIL. • Current efficiency and power efficiency of optimal tandem OLED is markedly enhanced. • The turn-on and driving voltages of optimal tandem OLED is obviously reduced. - Abstract: Tandem organic light-emitting diodes (OLEDs) have received much attention in solid-state lighting due to their high current efficiency, long lifetime and excellent stability. The highly efficient blue fluorescent tandem OLEDs based on the charge generation layer (CGL) of C{sub 60}/rubrene: MoO{sub 3} and the electron injection layer (EIL) of LiF/Al were fabricated. The ultra-thin Al layer in EIL was introduced to further increase electron injection from CGL to the emission unit. We found that the maximal current efficiency and power efficiency of optimal tandem device can reach to 43.1 cd/A and 15.1 lm/W, respectively, which are approximately 2.8 and 1.9 times compared with those of single-emissive-unit device. Moreover, compared with the traditional tandem device, the driving voltage of the optimal device is reduced by 6 V, and the turn-on voltage is reduced by 2.4 V. We analyzed the mechanism and characterization of these tandem devices. The effective charge separation and transport of C{sub 60}/rubrene: MoO{sub 3}, and excellent electron injection ability of ultra-thin Al layer are the main factors for the remarkable enhancement in both current efficiency and power efficiency of tandem OLEDs.

High voltage pulse generator. [Patent application

Science.gov (United States)

Fasching, G.E.

1975-06-12

An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

Advances in high voltage engineering

CERN Document Server

Haddad, A

2005-01-01

This book addresses the very latest research and development issues in high voltage technology and is intended as a reference source for researchers and students in the field, specifically covering developments throughout the past decade. This unique blend of expert authors and comprehensive subject coverage means that this book is ideally suited as a reference source for engineers and academics in the field for years to come.

Performance improvement of charge-trap memory by using a stacked Zr{sub 0.46}Si{sub 0.54}O{sub 2}/Al{sub 2}O{sub 3} charge-trapping layer

Energy Technology Data Exchange (ETDEWEB)

Tang, Zhenjie; Hu, Dan; Zhang, Xiwei; Zhao, Yage [College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000 (China); Li, Rong [School of Mathematics and Statistics, Anyang Normal University, Anyang 455000 (China)

2016-11-15

The postdeposition annealing (PDA)-treated charge-trap flash memory capacitor with stacked Zr{sub 0.46}Si{sub 0.54}O{sub 2}/Al{sub 2}O{sub 3} charge-trapping layer flanked by a SiO{sub 2} tunneling oxide and an Al{sub 2}O{sub 3} blocking oxide was fabricated and investigated. It is observed that the memory capacitor exhibits prominent memory characteristics with large memory windows 12.8 V in a ±10 V gate sweeping voltage range, faster program/erase speed, and good data-retention characteristics even at 125 C compared to a single charge-trapping layer (Zr{sub 0.46}Si{sub 0.54}O{sub 2}, Zr{sub 0.79}Si{sub 0.21}O{sub 2}, and Zr{sub 0.46}Al{sub 1.08}O{sub 2.54}). The quantum wells and introduced interfacial traps of the stacked trapping layer regulate the storage and loss behavior of charges, and jointly contribute to the improved memory characteristics. Hence, the memory capacitor with a stacked trapping layer is a promising candidate in future nonvolatile charge-trap memory device design and application. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

First-principles insights on electron transport in V{sub 2}O{sub 5} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Srivastava, Anurag [Advanced Materials Research Group, Computational Nanoscience and Technology Laboratory, Atal Bihari Vajpayee-Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh 474015 (India); Chandiramouli, R., E-mail: rcmoulii@gmail.com [School of Electrical and Electronics Engineering, Shanmugha Arts Science Technology and Research Academy (SASTRA) University, Tirumalaisamudram, Thanjavur, Tamil Nadu 613 401 (India)

2015-11-15

Graphical abstract: - Highlights: • Band structure and electron transport in V{sub 2}O{sub 5} nanostructure are investigated using density functional theory. • V{sub 2}O{sub 5} nanostructure exhibits semiconducting behavior. • The electron density is observed to be more in oxygen sites than in vanadium sites. • The electron transport in V{sub 2}O{sub 5} molecular device can be tuned with the applied bias voltage. - Abstract: The present report is on the electron transport properties of V{sub 2}O{sub 5} nanostructures, investigated using density functional theory. As the band structure of V{sub 2}O{sub 5} exhibits semiconducting nature, the V{sub 2}O{sub 5} nanostructures are designed as molecular device and the transport properties are studied. The density of electrons is found to be more in the oxygen sites than in vanadium sites. The device density of states shows that the density of electrons in the energy intervals depends on the applied bias voltage. The transmission spectrum gives the insight on the transport property of V{sub 2}O{sub 5} molecular device. The bias voltage drives the electrons across V{sub 2}O{sub 5} scattering region, where the transmission along V{sub 2}O{sub 5} molecular device mainly depends on the bias voltage. The findings of the present work give insights to fine-tune the transport property of V{sub 2}O{sub 5} molecular device upon varying the bias voltage.

Notes on the voltage performance of accelerator tube sub-modules for the NSF tandem

International Nuclear Information System (INIS)

Eastham, D.A.; Groome, A.E.; Powell, P.

1978-01-01

Measurements are reported of the d.c. voltage performance of vacuum accelerator tube sub-modules for the Nuclear Structure Facility 30 MV Tandem at Daresbury. Using diagnostic techniques it has been possible to separate out the different processes in the tube which can lead to breakdown. As a result, improved sub-modules have been produced. Tests, have simulated the ion exchange processes which occur in longer tube lengths, and a better understanding has been obtained of the way in which these processes depend on the tube geometry and cleanliness. (U.K.)