Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Science.gov (United States)

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

International Nuclear Information System (INIS)

Yan, Hai; Zou, Yi; Yang, Chun-Ju; Chakravarty, Swapnajit; Wang, Zheng; Tang, Naimei; Chen, Ray T.; Fan, Donglei

2015-01-01

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

Energy Technology Data Exchange (ETDEWEB)

Yan, Hai, E-mail: hai.yan@utexas.edu; Zou, Yi; Yang, Chun-Ju [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Chakravarty, Swapnajit, E-mail: swapnajit.chakravarty@omegaoptics.com [Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Wang, Zheng [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Tang, Naimei; Chen, Ray T., E-mail: raychen@uts.cc.utexas.edu [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Fan, Donglei [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

2015-03-23

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.

Experimental and numerical studies on the sensitivity of carbon fibre/silicone rubber composite sensors

International Nuclear Information System (INIS)

Yang, Lili; Ge, Yong; Zhu, Qinghua; Zhang, Ce; Wang, Zongpeng; Liu, Penghuan

2012-01-01

Flexible conductive composite sensors are of great importance for applications in structural monitoring due to their low cost, high durability and excellent compatibility. In this work, carbon fibre/silicone rubber composites were prepared and their sensitivity near the percolation threshold was investigated experimentally and theoretically. Results show that carbon fibre/silicone rubber composites have great mechanical and sensitivity even under high strain conditions. Two models based on the tunnelling effect and general effective medium theory were found to understand the sensitivity of composites with lower and higher fractions of carbon fibre. Moreover, the reversibility of the sensing performance is improved with the increase of carbon fibre addition. (paper)

Synthesis and Study on Effect of Parameters on Dry Sliding Wear Characteristics of AL-SI Alloys

Directory of Open Access Journals (Sweden)

Francis Uchenna OZIOKO

2012-08-01

Full Text Available The effect of parameters on dry sliding wear characteristics of Al-Si alloys was studied. Aluminium-silicon alloys containing 7%, 12% and 14% weight of silicon were synthesized using casting method. Dry sliding wear characteristics of sample were studied against a hardened carbon steel (Fe-2.3%Cr-0.9%C using a pin-on-disc. Observations were recorded keeping two parameters (sliding distance, sliding speed and load constant against wear at room temperature. Microstructural characterization was done using optical microscope (OM and scanning electron microscope (SEM. Hardness and wear characteristics of different samples have shown near uniform behaviour. The wear rate decreased when the percentage of silicon increases. Wear was observed to increase at higher applied load, higher sliding speed and higher sliding distance. The wear characteristics of Al-14%Si was observed superior to those of Al-7%Si and Al-12%Si due to the degree of refinement of their eutectic silicon.

Porous silicon: X-rays sensitivity

International Nuclear Information System (INIS)

Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

1994-01-01

We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

Phase-sensitive optical processing in silicon waveguides

DEFF Research Database (Denmark)

Petermann, Klaus; Gajda, A.; Dziallas, Claudia

2015-01-01

Parametric optical signal processing is reviewed for silicon nano-rib-waveguides with a reverse-biased pin-junction. Phase-sensitive parametric amplification with a phase-sensitive extinction of more than 20 dB has been utilized for the regeneration of DPSK signals...

Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

DEFF Research Database (Denmark)

Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

2016-01-01

We report on a novel design of an on-chip optical temperature sensor based on a Mach-Zehnder interferometer configuration where the two arms consist of hybrid waveguides providing opposite temperature-dependent phase changes to enhance the temperature sensitivity of the sensor. The sensitivity...... of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

Cascaded nano-porous silicon for high sensitive biosensing and functional group distinguishing by Mid-IR spectra.

Science.gov (United States)

Nguyen, Minh-Hang; Tsai, Hau-Jie; Wu, Jen-Kuei; Wu, Yi-Shiuan; Lee, Ming-Chang; Tseng, Fan-Gang

2013-09-15

We present a chemical-biosensor in the Mid-IR range and based on cascaded porous silicon made on p- and n-type (100) silicon substrates of resistivities between 0.001Ωcm and 0.005Ωcm. The stacked porous layers of various porosities (20-80%) and thicknesses (5-9μm) are formed by successive electrochemical etchings with different current densities. Working with FTIR technique that possesses fast response, high sensitivity, and capability of detecting and identifying functional groups, the cascaded porous structures provided enhanced refractive index sensitivities and reduced detection limits in chemical and biodetection. The largest wavenumber shifts were 50cm(-1)/mM obtained for d-(+)-glucose and 96cm(-1)/μg/mL for Cy5-conjungated Rabbit Anti-Mouse IgG. The lowest detectable concentration of glucose was 80μM (1.4mg/mL) with PS porosity of 40% and thickness of about 9μm while it was 40ng/mL for Cy5-conjugated Rabbit Anti-Mouse IgG which is 2.5×10(5) folds better than those in literature. Copyright © 2013 Elsevier B.V. All rights reserved.

Boundary lubrication of glass: rubber sliding contacts

NARCIS (Netherlands)

Heide, E. van der; Lossie, C.M.; Bommel, K.J.C. van; Reinders, S.A.F.; Lenting, H.B.M.

2009-01-01

Polymer brush coatings represent a promising class of coatings for friction control [1], especially in a humid environment [2]. A study on the feasibility of a specific class of polymer brush coatings [5] was done for a sliding system that involves ‘silicon skin L7350’: a silicon rubber used by FIFA

[High-frequency components of occlusal sound in sliding movement].

Science.gov (United States)

Nagai, K

1990-03-01

We postulated that high-frequency components of the occlusal sound occurring due to the characteristic vibration of teeth can be useful data for confirmation of the stability in occlusion, and studied the high-frequency components in the cases both of an experimental sliding movement and a normal occlusion. The results obtained were as follows. 1. A study on high-frequency components of the occlusal sound in an experimental sliding movement. 1) A study on wave type of the occlusal sound revealed one damped oscillation in an impact form and two in a slide form. 2) Spectrum analysis of the damped oscillation showed a similar spectrum pattern with a peak existing between 16KHz or more and 17KHz or less in both impact and slide cases. 2. A study on high-frequency components of the occlusal sound in a normal occlusion case. 1) The wave type in occlusal sound we have observed in a normal occlusion group and in a prosthetic or operative group was as follows: One damped oscillation shown in an impact form and two damped oscillation in a slide form which were the same as those shown in the case where an interference device was attached. 2) Duration of the sliding movement was short in a normal occlusion group, but was prolonged in a prosthetic or operative group. 3) The incidence of the wave type in occlusal sound was 56.7% in a prosthetic or operative group as compared to 87.8% in a normal occlusion group in an impact form. In contrast, the incidence was 43.3% in a prosthetic or operative group as compared to 12.2% in a normal occlusion group in a slide form. Such difference in the incidence between the wave types suggested that high-frequency components of occlusal sound can be an index for judgement of the stability in occlusion.

Illumination-invariant face recognition with a contrast sensitive silicon retina

Energy Technology Data Exchange (ETDEWEB)

Buhmann, J.M. [Rheinische Friedrich-Wilhelms-Univ., Bonn (Germany). Inst. fuer Informatik II; Lades, M. [Bochum Univ. (Germany). Inst. fuer Neuroinformatik; Eeckman, F. [Lawrence Livermore National Lab., CA (United States)

1993-11-29

Changes in lighting conditions strongly effect the performance and reliability of computer vision systems. We report face recognition results under drastically changing lighting conditions for a computer vision system which concurrently uses a contrast sensitive silicon retina and a conventional, gain controlled CCD camera. For both input devices the face recognition system employs an elastic matching algorithm with wavelet based features to classify unknown faces. To assess the effect of analog on-chip preprocessing by the silicon retina the CCD images have been digitally preprocessed with a bandpass filter to adjust the power spectrum. The silicon retina with its ability to adjust sensitivity increases the recognition rate up to 50 percent. These comparative experiments demonstrate that preprocessing with an analog VLSI silicon retina generates image data enriched with object-constant features.

A porous silicon optical microcavity for sensitive bacteria detection

International Nuclear Information System (INIS)

Li Sha; Huang Jianfeng; Cai Lintao

2011-01-01

A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak (∼10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml -1 at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml -1 . The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

A porous silicon optical microcavity for sensitive bacteria detection

Science.gov (United States)

Li, Sha; Huang, Jianfeng; Cai, Lintao

2011-10-01

A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak (~10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml - 1 at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml - 1. The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

A porous silicon optical microcavity for sensitive bacteria detection

Energy Technology Data Exchange (ETDEWEB)

Li Sha; Huang Jianfeng; Cai Lintao, E-mail: lt.cai@siat.ac.cn [CAS Key Lab of Health Informatics, Shenzhen Key Laboratory of Cancer Nanotechnology, Institute of Biomedical and Health Engineering, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055 (China)

2011-10-21

A porous silicon microcavity (PSM) is highly sensitive to subtle interface changes due to its high surface area, capillary condensation ability and a narrow resonance peak ({approx}10 nm). Based on the well-defined optical properties of a PSM, we successfully fabricated a bacteria detection chip for molecular or subcellular analysis by surface modification using undecylenic acid (UA), and the specific recognition binding of vancomycin to the D-alanyl-D-alanine of bacteria. The red shift of the PSM resonance peak showed a good linear relationship with bacteria concentration ranging from 100 to 1000 bacteria ml{sup -1} at the level of relative standard deviation of 0.994 and detection limit of 20 bacteria ml{sup -1}. The resulting PSM sensors demonstrated high sensitivity, good reproducibility, fast response and low cost for biosensing.

Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments

Energy Technology Data Exchange (ETDEWEB)

Zegrya, G. G. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Savenkov, G. G. [Saint-Petersburg State Engineering Institute (Technical University) (Russian Federation); Morozov, V. A. [Saint-Petersburg State University (Russian Federation); Zegrya, A. G.; Ulin, N. V., E-mail: Ulin@mail.ioffe.ru; Ulin, V. P. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lukin, A. A. [Saint-Petersburg State Engineering Institute (Technical University) (Russian Federation); Bragin, V. A.; Oskin, I. A. [AO Scientific Production Association Poisk (Russian Federation); Mikhailov, Yu. M. [Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation)

2017-04-15

The sensitivity of an energy-packed compound based on nanoporous silicon and calcium perchlorate to a high-current electron beam is studied. The initiation of explosive transformations in a mixture of potassium picrate with a highly dispersed powder of boron-doped silicon by means of a high-voltage discharge is examined. It is shown that explosive transformation modes (combustion and explosion) appear in the energy-packed compound under study upon its treatment with an electron beam. A relationship is established between the explosive transformation modes and the density of the energy-packed compound and between the breakdown (initiation) voltage and the mass fraction of the silicon powder.

SlideToolkit: an assistive toolset for the histological quantification of whole slide images.

Directory of Open Access Journals (Sweden)

Bastiaan G L Nelissen

Full Text Available The demand for accurate and reproducible phenotyping of a disease trait increases with the rising number of biobanks and genome wide association studies. Detailed analysis of histology is a powerful way of phenotyping human tissues. Nonetheless, purely visual assessment of histological slides is time-consuming and liable to sampling variation and optical illusions and thereby observer variation, and external validation may be cumbersome. Therefore, within our own biobank, computerized quantification of digitized histological slides is often preferred as a more precise and reproducible, and sometimes more sensitive approach. Relatively few free toolkits are, however, available for fully digitized microscopic slides, usually known as whole slides images. In order to comply with this need, we developed the slideToolkit as a fast method to handle large quantities of low contrast whole slides images using advanced cell detecting algorithms. The slideToolkit has been developed for modern personal computers and high-performance clusters (HPCs and is available as an open-source project on github.com. We here illustrate the power of slideToolkit by a repeated measurement of 303 digital slides containing CD3 stained (DAB abdominal aortic aneurysm tissue from a tissue biobank. Our workflow consists of four consecutive steps. In the first step (acquisition, whole slide images are collected and converted to TIFF files. In the second step (preparation, files are organized. The third step (tiles, creates multiple manageable tiles to count. In the fourth step (analysis, tissue is analyzed and results are stored in a data set. Using this method, two consecutive measurements of 303 slides showed an intraclass correlation of 0.99. In conclusion, slideToolkit provides a free, powerful and versatile collection of tools for automated feature analysis of whole slide images to create reproducible and meaningful phenotypic data sets.

Study on photon sensitivity of silicon diodes related to materials used for shielding

International Nuclear Information System (INIS)

Moiseev, T.

1999-01-01

Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

International Nuclear Information System (INIS)

Moiseev, T.

2000-01-01

Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

Performance comparison between silicon solar panel and dye-sensitized solar panel in Malaysia

Science.gov (United States)

Hamed, N. K. A.; Ahmad, M. K.; Urus, N. S. T.; Mohamad, F.; Nafarizal, N.; Ahmad, N.; Soon, C. F.; Ameruddin, A. S.; Faridah, A. B.; Shimomura, M.; Murakami, K.

2017-09-01

In carrying out experimental research in performance between silicon solar panel and dye-sensitive solar panel, we have been developing a device and a system. This system has been developed consisting of controllers, hardware and software. This system is capable to get most of the input sources. If only need to change the main circuit and coding for a different source input value. This device is able to get the ambient temperature, surface temperature, surrounding humidity, voltage with load, current with load, voltage without load and current without load and save the data into external memory. This device is able to withstand the heat and rain as it was fabricated in a waterproof box. This experiment was conducted to examine the performance of both the solar panels which are capable to maintain their stability and performance. A conclusion based on data populated, the distribution of data for dye-sensitized solar panel is much better than silicon solar panel as dye-sensitized solar panel is very sensitive to heat and not depend only on midday where is that is the maximum ambient temperature for both solar panel as silicon solar panel only can give maximum and high output only when midday.

Semantic focusing allows fully automated single-layer slide scanning of cervical cytology slides.

Directory of Open Access Journals (Sweden)

Bernd Lahrmann

Full Text Available Liquid-based cytology (LBC in conjunction with Whole-Slide Imaging (WSI enables the objective and sensitive and quantitative evaluation of biomarkers in cytology. However, the complex three-dimensional distribution of cells on LBC slides requires manual focusing, long scanning-times, and multi-layer scanning. Here, we present a solution that overcomes these limitations in two steps: first, we make sure that focus points are only set on cells. Secondly, we check the total slide focus quality. From a first analysis we detected that superficial dust can be separated from the cell layer (thin layer of cells on the glass slide itself. Then we analyzed 2,295 individual focus points from 51 LBC slides stained for p16 and Ki67. Using the number of edges in a focus point image, specific color values and size-inclusion filters, focus points detecting cells could be distinguished from focus points on artifacts (accuracy 98.6%. Sharpness as total focus quality of a virtual LBC slide is computed from 5 sharpness features. We trained a multi-parameter SVM classifier on 1,600 images. On an independent validation set of 3,232 cell images we achieved an accuracy of 94.8% for classifying images as focused. Our results show that single-layer scanning of LBC slides is possible and how it can be achieved. We assembled focus point analysis and sharpness classification into a fully automatic, iterative workflow, free of user intervention, which performs repetitive slide scanning as necessary. On 400 LBC slides we achieved a scanning-time of 13.9±10.1 min with 29.1±15.5 focus points. In summary, the integration of semantic focus information into whole-slide imaging allows automatic high-quality imaging of LBC slides and subsequent biomarker analysis.

Semantic focusing allows fully automated single-layer slide scanning of cervical cytology slides.

Science.gov (United States)

Lahrmann, Bernd; Valous, Nektarios A; Eisenmann, Urs; Wentzensen, Nicolas; Grabe, Niels

2013-01-01

Liquid-based cytology (LBC) in conjunction with Whole-Slide Imaging (WSI) enables the objective and sensitive and quantitative evaluation of biomarkers in cytology. However, the complex three-dimensional distribution of cells on LBC slides requires manual focusing, long scanning-times, and multi-layer scanning. Here, we present a solution that overcomes these limitations in two steps: first, we make sure that focus points are only set on cells. Secondly, we check the total slide focus quality. From a first analysis we detected that superficial dust can be separated from the cell layer (thin layer of cells on the glass slide) itself. Then we analyzed 2,295 individual focus points from 51 LBC slides stained for p16 and Ki67. Using the number of edges in a focus point image, specific color values and size-inclusion filters, focus points detecting cells could be distinguished from focus points on artifacts (accuracy 98.6%). Sharpness as total focus quality of a virtual LBC slide is computed from 5 sharpness features. We trained a multi-parameter SVM classifier on 1,600 images. On an independent validation set of 3,232 cell images we achieved an accuracy of 94.8% for classifying images as focused. Our results show that single-layer scanning of LBC slides is possible and how it can be achieved. We assembled focus point analysis and sharpness classification into a fully automatic, iterative workflow, free of user intervention, which performs repetitive slide scanning as necessary. On 400 LBC slides we achieved a scanning-time of 13.9±10.1 min with 29.1±15.5 focus points. In summary, the integration of semantic focus information into whole-slide imaging allows automatic high-quality imaging of LBC slides and subsequent biomarker analysis.

High Sensitivity Detection of CdSe/ZnS Quantum Dot-Labeled DNA Based on N-type Porous Silicon Microcavities.

Science.gov (United States)

Lv, Changwu; Jia, Zhenhong; Lv, Jie; Zhang, Hongyan; Li, Yanyu

2017-01-01

N-type macroporous silicon microcavity structures were prepared using electrochemical etching in an HF solution in the absence of light and oxidants. The CdSe/ZnS water-soluble quantum dot-labeled DNA target molecules were detected by monitoring the microcavity reflectance spectrum, which was characterized by the reflectance spectrum defect state position shift resulting from changes to the structures' refractive index. Quantum dots with a high refractive index and DNA coupling can improve the detection sensitivity by amplifying the optical response signals of the target DNA. The experimental results show that DNA combined with a quantum dot can improve the sensitivity of DNA detection by more than five times.

Towards highly sensitive strain sensing based on nanostructured materials

International Nuclear Information System (INIS)

Dao, Dzung Viet; Nakamura, Koichi; Sugiyama, Susumu; Bui, Tung Thanh; Dau, Van Thanh; Yamada, Takeo; Hata, Kenji

2010-01-01

This paper presents our recent theoretical and experimental study of piezo-effects in nanostructured materials for highly sensitive, high resolution mechanical sensors. The piezo-effects presented here include the piezoresistive effect in a silicon nanowire (SiNW) and single wall carbon nanotube (SWCNT) thin film, as well as the piezo-optic effect in a Si photonic crystal (PhC) nanocavity. Firstly, the electronic energy band structure of the silicon nanostructure is discussed and simulated by using the First-Principles Calculations method. The result showed a remarkably different energy band structure compared with that of bulk silicon. This difference in the electronic state will result in different physical, chemical, and therefore, sensing properties of silicon nanostructures. The piezoresistive effects of SiNW and SWCNT thin film were investigated experimentally. We found that, when the width of ( 110 ) p-type SiNW decreases from 500 to 35 nm, the piezoresistive effect increases by more than 60%. The longitudinal piezoresistive coefficient of SWCNT thin film was measured to be twice that of bulk p-type silicon. Finally, theoretical investigations of the piezo-optic effect in a PhC nanocavity based on Finite Difference Time Domain (FDTD) showed extremely high resolution strain sensing. These nanostructures were fabricated based on top-down nanofabrication technology. The achievements of this work are significant for highly sensitive, high resolution and miniaturized mechanical sensors

Heterogeneous catalysis in highly sensitive microreactors

DEFF Research Database (Denmark)

Olsen, Jakob Lind

This thesis present a highly sensitive silicon microreactor and examples of its use in studying catalysis. The experimental setup built for gas handling and temperature control for the microreactor is described. The implementation of LabVIEW interfacing for all the experimental parts makes...

Experimental Demonstration of Phase Sensitive Parametric Processes in a Nano-Engineered Silicon Waveguide

DEFF Research Database (Denmark)

Kang, Ning; Fadil, Ahmed; Pu, Minhao

2013-01-01

We demonstrate experimentally phase-sensitive processes in nano-engineered silicon waveguides for the first time. Furthermore, we highlight paths towards the optimization of the phase-sensitive extinction ratio under the impact of two-photon and free-carrier absorption.......We demonstrate experimentally phase-sensitive processes in nano-engineered silicon waveguides for the first time. Furthermore, we highlight paths towards the optimization of the phase-sensitive extinction ratio under the impact of two-photon and free-carrier absorption....

Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

International Nuclear Information System (INIS)

Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

2013-01-01

Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm 3 . For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

Science.gov (United States)

Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

2013-07-01

Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm3. For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

Sensitivity encoded silicon photomultiplier--a new sensor for high-resolution PET-MRI.

Science.gov (United States)

Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

2013-07-21

Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm(3). For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

Directory of Open Access Journals (Sweden)

Tianjian Li

2015-04-01

Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

High PRF ultrafast sliding compound doppler imaging: fully qualitative and quantitative analysis of blood flow

Science.gov (United States)

Kang, Jinbum; Jang, Won Seuk; Yoo, Yangmo

2018-02-01

Ultrafast compound Doppler imaging based on plane-wave excitation (UCDI) can be used to evaluate cardiovascular diseases using high frame rates. In particular, it provides a fully quantifiable flow analysis over a large region of interest with high spatio-temporal resolution. However, the pulse-repetition frequency (PRF) in the UCDI method is limited for high-velocity flow imaging since it has a tradeoff between the number of plane-wave angles (N) and acquisition time. In this paper, we present high PRF ultrafast sliding compound Doppler imaging method (HUSDI) to improve quantitative flow analysis. With the HUSDI method, full scanline images (i.e. each tilted plane wave data) in a Doppler frame buffer are consecutively summed using a sliding window to create high-quality ensemble data so that there is no reduction in frame rate and flow sensitivity. In addition, by updating a new compounding set with a certain time difference (i.e. sliding window step size or L), the HUSDI method allows various Doppler PRFs with the same acquisition data to enable a fully qualitative, retrospective flow assessment. To evaluate the performance of the proposed HUSDI method, simulation, in vitro and in vivo studies were conducted under diverse flow circumstances. In the simulation and in vitro studies, the HUSDI method showed improved hemodynamic representations without reducing either temporal resolution or sensitivity compared to the UCDI method. For the quantitative analysis, the root mean squared velocity error (RMSVE) was measured using 9 angles (-12° to 12°) with L of 1-9, and the results were found to be comparable to those of the UCDI method (L  =  N  =  9), i.e.  ⩽0.24 cm s-1, for all L values. For the in vivo study, the flow data acquired from a full cardiac cycle of the femoral vessels of a healthy volunteer were analyzed using a PW spectrogram, and arterial and venous flows were successfully assessed with high Doppler PRF (e.g. 5 kHz at L�

High PRF ultrafast sliding compound doppler imaging: fully qualitative and quantitative analysis of blood flow.

Science.gov (United States)

Kang, Jinbum; Jang, Won Seuk; Yoo, Yangmo

2018-02-09

Ultrafast compound Doppler imaging based on plane-wave excitation (UCDI) can be used to evaluate cardiovascular diseases using high frame rates. In particular, it provides a fully quantifiable flow analysis over a large region of interest with high spatio-temporal resolution. However, the pulse-repetition frequency (PRF) in the UCDI method is limited for high-velocity flow imaging since it has a tradeoff between the number of plane-wave angles (N) and acquisition time. In this paper, we present high PRF ultrafast sliding compound Doppler imaging method (HUSDI) to improve quantitative flow analysis. With the HUSDI method, full scanline images (i.e. each tilted plane wave data) in a Doppler frame buffer are consecutively summed using a sliding window to create high-quality ensemble data so that there is no reduction in frame rate and flow sensitivity. In addition, by updating a new compounding set with a certain time difference (i.e. sliding window step size or L), the HUSDI method allows various Doppler PRFs with the same acquisition data to enable a fully qualitative, retrospective flow assessment. To evaluate the performance of the proposed HUSDI method, simulation, in vitro and in vivo studies were conducted under diverse flow circumstances. In the simulation and in vitro studies, the HUSDI method showed improved hemodynamic representations without reducing either temporal resolution or sensitivity compared to the UCDI method. For the quantitative analysis, the root mean squared velocity error (RMSVE) was measured using 9 angles (-12° to 12°) with L of 1-9, and the results were found to be comparable to those of the UCDI method (L  =  N  =  9), i.e.  ⩽0.24 cm s -1 , for all L values. For the in vivo study, the flow data acquired from a full cardiac cycle of the femoral vessels of a healthy volunteer were analyzed using a PW spectrogram, and arterial and venous flows were successfully assessed with high Doppler PRF (e.g. 5 kHz at L�

Radiation-hard silicon photonics for high energy physics and beyond

CERN Multimedia

CERN. Geneva

2016-01-01

Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

VUV-sensitive silicon-photomultipliers for the nEXO-experiment

Energy Technology Data Exchange (ETDEWEB)

Wrede, Gerrit; Bayerlein, Reimund; Hufschmidt, Patrick; Jamil, Ako; Schneider, Judith; Wagenpfeil, Michael; Ziegler, Tobias; Hoessl, Juergen; Anton, Gisela; Michel, Thilo [ECAP, Friedrich-Alexander-Universitaet Erlangen-Nuernberg (Germany)

2016-07-01

The nEXO (next Enriched Xenon Observatory) experiment will search for the neutrinoless double beta decay of Xe-136 with a liquid xenon TPC (Time ProjectionChamber). The sensitivity of the experiment is related to the energy resolution, which itself depends on the accuracies of the measurements of the amount of drifting electrons and the number of scintillation photons with their wavelength being in the vacuum ultraviolet band. Silicon Photomultipliers (SiPM) shall be used for the detection of the scintillation light, since they can be produced extremely radiopure. Commercially available SiPM do not fulfill all requirements of the nEXO experiment, thus a dedicated development is necessary. To characterize the silicon photomultipliers, we have built a test apparatus for xenon liquefaction, in which a VUV-sensitive photomultiplier tube can be operated together with the SiPM. In this contribution we present our apparatus for the SiPM characterization measurements and our latest results on the test of the silicon photomultipliers for the detection of xenon scintillation light.

Baseball and softball sliding injuries: incidence and correlates during one high school league varsity season.

Science.gov (United States)

Stovak, Mark; Parikh, Amit; Harvey, Anne T

2012-11-01

To estimate injury rates associated with sliding in high school baseball and softball. Prospective cohort study. Community high school athletic events. Ten high school varsity baseball and softball teams over 1 season. All sliding attempts were recorded during each game and recorded as headfirst, feetfirst, or diveback. Base type, playing surface, and field conditions were also noted. Injury exposure rates by game exposures and sliding/diveback exposures. Data were collected from 153 baseball games and 166 softball games. A greater proportion of slides were associated with injury in softball than in baseball (42.0 and 4.9 per 1000 slides; P softball (55 vs 35 per 1000 slides; P = 0.74). More powerful studies are required to determine whether efforts to prevent baseball sliding injuries at the high school level should focus on better education in sliding technique or changes in equipment. Softball players are vulnerable to injury when wearing inadequate protective sliding apparel.

Failure mechanism of coated biomaterials under high impact-sliding contact stresses

Science.gov (United States)

Chen, Ying

This study uses a newly developed testing method--- inclined cyclic impact-sliding test to investigate the failure behaviors of different types of biomaterials, (SS316L, Ti6Al4V and CoCr) coated by different coatings (TiN, DLC and PEO), under extremely high dynamic contact stress conditions. This test method can simulate the combined impact and sliding/rolling loading conditions, which is very practical in many aspects of commercial usages. During the tests, fatigue cracking, chipping, peeling and material transferring were observed in damaged area. This research is mainly focused on the failure behaviors of load-bearing materials which cyclic impacting and sliding are always involved. This purpose was accomplished in the three stages: First, impact-sliding test was carried out on TiN coated unhardened M2. It was found that soft substrate can cause early failure of coating due to the considerable plastic deformation in the substrate. In this case, stronger substrate is required to support coating better when tested under high contact stresses. Second, PEO coated Ti-6Al-4V was tested under pure sliding and impact-sliding wear conditions. PEO coating was found not strong enough to afford the high contact pressure under cyclic impact-sliding wear test due to its porous surface structure. However, the wear performance of PEO coating was enhanced due to the sub-stoichiometric oxide. To sum up, for load-bearing biomedical implants involved in high impacting movement, PEO coating may not be a promising surface protection. Third, the dense, smooth PVD/CVD bio-inert coatings were reconsidered. DLC and TiN coatings, combined by different substrates together with different interface materials were tested under the cyclic impact-sliding test using a set of proper loading. The results show that to choose a proper combination of coating, interface and substrate based on their mechanical properties is of great importance under the test condition. Hard substrates provide support

A high performance micro-pressure sensor based on a double-ended quartz tuning fork and silicon diaphragm in atmospheric packaging

International Nuclear Information System (INIS)

Cheng, Rongjun; Li, Cun; Zhao, Yulong; Li, Bo; Tian, Bian

2015-01-01

A resonant micro-pressure sensor based on a double-ended quartz tuning fork (DEQTF) and bossed silicon diaphragm in atmospheric packaging is presented. To achieve vacuum-free packaging with a high quality factor, the DEQTF is designed to resonate in an anti-phase vibration mode in a plane that is under the effect of slide-film damping. The feasibility is demonstrated by theoretical analysis and a finite element simulation. The dimensions of the DEQTF and diaphragm are optimized in accordance with the principles of improving sensitivity and minimizing energy dissipation. The sensor chip is fabricated using quartz and silicon micromachining technologies, and simply packaged in a stainless steel shell with standard atmosphere. The experimental setup is established for the calibration, where an additional sensor prototype without a pressure port is introduced as a frequency reference. By detecting the frequency difference of the tested sensor and reference sensor, the influences of environmental factors such as temperature and shocks on measuring accuracy are eliminated effectively. Under the action of a self-excitation circuit, static performance is obtained. The sensitivity of the sensor is 299 kHz kPa −1 in the operating range of 0–10 kPa at room temperature. Testing results shows a nonlinearity of 0.0278%FS, a hysteresis of 0.0207%FS and a repeatability of 0.0375%FS. The results indicate that the proposed sensor has favorable features, which provides a cost-effective and high-performance approach for low pressure measurement. (paper)

Tuning the Slide-Roll Motion Mode of Carbon Nanotubes via Hydroxyl Groups

Science.gov (United States)

Li, Rui; Wang, Shiwei; Peng, Qing

2018-05-01

Controlling the motion of carbon nanotubes is critical in manipulating nanodevices, including nanorobots. Herein, we investigate the motion behavior of SWCNT (10,10) on Si substrate utilizing molecular dynamics simulations. We show that hydroxyl groups have sensitive effect on the carbon nanotube's motion mode. When the hydroxyl groups' ratio on carbon nanotube and silicon substrate surfaces is larger than 10 and 20%, respectively, the motion of carbon nanotube transforms from sliding to rolling. When the hydroxyl groups' ratio is smaller, the slide or roll mode can be controlled by the speed of carbon nanotube, which is ultimately determined by the competition between the interface potential energy and kinetic energy. The change of motion mode holds true for different carbon nanotubes with hydroxyl groups. The chirality has little effect on the motion behavior, as opposed to the diameter, attributed to the hydroxyl groups' ratio. Our study suggests a new route to control the motion behavior of carbon nanotube via hydroxyl groups.

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.

Science.gov (United States)

Al-Hardan, Naif H; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N

2016-06-07

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

High mass resolution time of flight mass spectrometer for measuring products in heterogeneous catalysis in highly sensitive microreactors

DEFF Research Database (Denmark)

Andersen, Thomas; Jensen, Robert; Christensen, M. K.

2012-01-01

We demonstrate a combined microreactor and time of flight system for testing and characterization of heterogeneous catalysts with high resolution mass spectrometry and high sensitivity. Catalyst testing is performed in silicon-based microreactors which have high sensitivity and fast thermal...

Silicon detectors for x and gamma-ray with high radiation resistance

International Nuclear Information System (INIS)

Cimpoca, Valerica; Popescu, Ion V.; Ruscu, Radu

2001-01-01

Silicon detectors are widely used in X and gamma-ray spectroscopy for direct detection or coupled with scintillators in high energy nuclear physics (modern collider experiments are representative), medicine and industrial applications. In X and gamma dosimetry, a low detection limit (under 6 KeV) with silicon detectors becomes available. Work at the room temperature is now possible due to the silicon processing evolution, which assures low reverse current and high life time of carriers. For several years, modern semiconductor detectors have been the primary choice for the measurement of nuclear radiation in various scientific fields. Nowadays the recently developed high resolution silicon detectors found their way in medical applications. As a consequence many efforts have been devoted to the development of high sensitivity and radiation hardened X and gamma-ray detectors for the energy range of 5 - 150 keV. The paper presents some results concerning the technology and behaviour of X and Gamma ray silicon detectors used in physics research, industrial and medical radiography. The electrical characteristics of these detectors, their modification after exposure to radiation and the results of spectroscopic X and Gamma-ray measurements are discussed. The results indicated that the proposed detectors enables the development of reliable silicon detectors to be used in controlling the low and high radiation levels encountered in a lot of application

Performance of high-resolution position-sensitive detectors developed for storage-ring decay experiments

International Nuclear Information System (INIS)

Yamaguchi, T.; Suzaki, F.; Izumikawa, T.; Miyazawa, S.; Morimoto, K.; Suzuki, T.; Tokanai, F.; Furuki, H.; Ichihashi, N.; Ichikawa, C.; Kitagawa, A.; Kuboki, T.; Momota, S.; Nagae, D.; Nagashima, M.; Nakamura, Y.; Nishikiori, R.; Niwa, T.; Ohtsubo, T.; Ozawa, A.

2013-01-01

Highlights: • Position-sensitive detectors were developed for storage-ring decay spectroscopy. • Fiber scintillation and silicon strip detectors were tested with heavy ion beams. • A new fiber scintillation detector showed an excellent position resolution. • Position and energy detection by silicon strip detectors enable full identification. -- Abstract: As next generation spectroscopic tools, heavy-ion cooler storage rings will be a unique application of highly charged RI beam experiments. Decay spectroscopy of highly charged rare isotopes provides us important information relevant to the stellar conditions, such as for the s- and r-process nucleosynthesis. In-ring decay products of highly charged RI will be momentum-analyzed and reach a position-sensitive detector set-up located outside of the storage orbit. To realize such in-ring decay experiments, we have developed and tested two types of high-resolution position-sensitive detectors: silicon strips and scintillating fibers. The beam test experiments resulted in excellent position resolutions for both detectors, which will be available for future storage-ring experiments

Highly sensitive and selective detection of dopamine using one-pot synthesized highly photoluminescent silicon nanoparticles.

Science.gov (United States)

Zhang, Xiaodong; Chen, Xiaokai; Kai, Siqi; Wang, Hong-Yin; Yang, Jingjing; Wu, Fu-Gen; Chen, Zhan

2015-03-17

A simple and highly efficient method for dopamine (DA) detection using water-soluble silicon nanoparticles (SiNPs) was reported. The SiNPs with a high quantum yield of 23.6% were synthesized by using a one-pot microwave-assisted method. The fluorescence quenching capability of a variety of molecules on the synthesized SiNPs has been tested; only DA molecules were found to be able to quench the fluorescence of these SiNPs effectively. Therefore, such a quenching effect can be used to selectively detect DA. All other molecules tested have little interference with the dopamine detection, including ascorbic acid, which commonly exists in cells and can possibly affect the dopamine detection. The ratio of the fluorescence intensity difference between the quenched and unquenched cases versus the fluorescence intensity without quenching (ΔI/I) was observed to be linearly proportional to the DA analyte concentration in the range from 0.005 to 10.0 μM, with a detection limit of 0.3 nM (S/N = 3). To the best of our knowledge, this is the lowest limit for DA detection reported so far. The mechanism of fluorescence quenching is attributed to the energy transfer from the SiNPs to the oxidized dopamine molecules through Förster resonance energy transfer. The reported method of SiNP synthesis is very simple and cheap, making the above sensitive and selective DA detection approach using SiNPs practical for many applications.

Hand ultrasound: a high-fidelity simulation of lung sliding.

Science.gov (United States)

Shokoohi, Hamid; Boniface, Keith

2012-09-01

Simulation training has been effectively used to integrate didactic knowledge and technical skills in emergency and critical care medicine. In this article, we introduce a novel model of simulating lung ultrasound and the features of lung sliding and pneumothorax by performing a hand ultrasound. The simulation model involves scanning the palmar aspect of the hand to create normal lung sliding in varying modes of scanning and to mimic ultrasound features of pneumothorax, including "stratosphere/barcode sign" and "lung point." The simple, reproducible, and readily available simulation model we describe demonstrates a high-fidelity simulation surrogate that can be used to rapidly illustrate the signs of normal and abnormal lung sliding at the bedside. © 2012 by the Society for Academic Emergency Medicine.

High Sensitivity pH Sensor Based on Porous Silicon (PSi Extended Gate Field-Effect Transistor

Directory of Open Access Journals (Sweden)

Naif H. Al-Hardan

2016-06-01

Full Text Available In this study, porous silicon (PSi was prepared and tested as an extended gate field-effect transistor (EGFET for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

Studies of the sensitivity dependence of float zone silicon diodes on gamma absorbed dose

International Nuclear Information System (INIS)

Pascoalino, K.C.S.; Santos, T.C. dos; Barbosa, R.F.; Camargo, F. de; Goncalves, J.A.C.; Bueno, C.C.

2011-01-01

Full text: Several advantages of silicon diodes which include small size, low cost, high sensitivity and wide availability, make them suitable for dosimetry and for radiation field mapping. However, the small radiation tolerance of ordinary silicon devices has imposed constraints on their application in intense radiation fields such as found in industrial radiation processes. This scenario has been changed with the development of radiation hard silicon devices to be used as track detectors in high-energy physics experiments. Particularly, in this work it is presented the dosimetric results obtained with a batch of nine junction silicon diodes developed, in the framework of CERN RD50 Collaboration, as good candidates for improved radiation hardness. These diodes were produced with 300 micrometer n-type silicon substrate grown by standard float zone technique and processed by the Microelectronics Center of Helsinki University of Technology. The samples irradiation was performed using a Co-60 irradiator (Gammacell 220) which delivers a dose-rate of 2 kGy/h. During the irradiation, the unbiased diodes were connected through low-noise coaxial cables to the input of a KEITHLEY 617 electrometer, in order to monitor the devices photocurrent as a function of the exposure time. To study the response uniformity of the batch of nine diodes as well the sensitivity dependence on the absorbed dose, they were irradiated with different doses from 5 kGy up to 50 kGy. The sensitivity response of each device was investigated through the on-line measurements of the current signals as a function of the exposure time. For doses up to 5 kGy, all diodes exhibited a current decay of almost six percent in comparison with the value registered at the start-time of the irradiation. However, this decrease in the current sensitivity is much smaller than those observed with ordinary diodes for the same absorbed dose. The dose-response curves of the devices were also investigated through the plot

Superplasticity of Inconel 718 after processing by high-pressure sliding (HPS)

Czech Academy of Sciences Publication Activity Database

Takizawa, Y.; Kajita, T.; Král, Petr; Masuda, T.; Watanabe, K.; Yumoto, M.; Otagiri, Y.; Sklenička, Václav; Horita, Z.

2017-01-01

Roč. 682, JAN (2017), s. 603-612 ISSN 0921-5093 Institutional support: RVO:68081723 Keywords : High-pressure sliding (HPS) * Severe plastic deformation (SPD) * Ni-based superalloy * Superplasticity * Grain boundary sliding * Lattice diffusion Subject RIV: JG - Metallurgy OBOR OECD: Materials engineering Impact factor: 3.094, year: 2016

A highly sensitive and durable electrical sensor for liquid ethanol using thermally-oxidized mesoporous silicon

Science.gov (United States)

Harraz, Farid A.; Ismail, Adel A.; Al-Sayari, S. A.; Al-Hajry, A.; Al-Assiri, M. S.

2016-12-01

A capacitive detection of liquid ethanol using reactive, thermally oxidized films constructed from electrochemically synthesized porous silicon (PSi) is demonstrated. The sensor elements are fabricated as meso-PSi (pore sizes hydrophobic PSi surface exhibited almost a half sensitivity of the thermal oxide sensor. The response to water is achieved only at the oxidized surface and found to be ∼one quarter of the ethanol sensitivity, dependent on parameters such as vapor pressure and surface tension. The capacitance response retains ∼92% of its initial value after continuous nine cyclic runs and the sensors presumably keep long-term stability after three weeks storage, demonstrating excellent durability and storage stability. The observed behavior in current system is likely explained by the interface interaction due to dipole moment effect. The results suggest that the current sensor structure and design can be easily made to produce notably higher sensitivities for reversible detection of various analytes.

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Science.gov (United States)

Grant, Nicholas E.

2016-01-01

A procedure to measure the bulk lifetime (>100 µsec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (<1012 cm-3). PMID:26779939

Ultraviolet /UV/ sensitive phosphors for silicon imaging detectors

Science.gov (United States)

Viehmann, W.; Cowens, M. W.; Butner, C. L.

1981-01-01

The fluorescence properties of UV sensitive organic phosphors and the radiometric properties of phosphor coated silicon detectors in the VUV, UV, and visible wavelengths are described. With evaporated films of coronene and liumogen, effective quantum efficiencies of up to 20% have been achieved on silicon photodiodes in the vacuum UV. With thin films of methylmethacrylate (acrylic), which are doped with organic laser dyes and deposited from solution, detector quantum efficiencies of the order of 15% for wavelengths of 120-165 nm and of 40% for wavelengths above 190 nm have been obtained. The phosphor coatings also act as antireflection coatings and thereby enhance the response of coated devices throughout the visible and near IR.

Tribochemical interactions of Si-doped DLC film against steel in sliding contact

International Nuclear Information System (INIS)

Yoon, Eui Sung; Pham, Duc Cuong; Ahn, Hyo Sok; Oh, Jae Eung

2007-01-01

This study concerns the effects of tribochemical interactions at the interface of Si-DLC (silicon-doped diamond-like carbon) film and steel ball in sliding contact on tribological properties of the film. The Si-DLC film was over-coated on pure DLC coating by radio frequency plasma-assisted chemical vapor deposition (r.f. PACVD) with different Si concentration. Friction tests against steel ball using a reciprocating type tribotester were performed in ambient environment. X-Ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES) were used to study the chemical characteristics and elemental composition of the films and mating balls after tests. Results showed a darkgray film consisting of carbon, oxygen and silicon on the worn steel ball surface with different thickness. On the contrary, such film was not observed on the surface of the ball slid against pure DLC coating. The oxidation of Si-DLC surface and steel ball was also found at particular regions of contact area. This demonstrates that tribochemical interactions occurred at the contact area of Si-DLC and steel ball during sliding to form a tribofilm (so called transfer film) on the ball specimen. While the pure DLC coating exhibited high coefficient of friction (∼0.06), the Si-DLC film showed a significant lower coefficient of friction (∼0.022) with the presence of tribofilm on mating ball surface. However, the Si-DLC film possesses a very high wear rate in comparison with the pure DLC. It was found that the tribochemical interactions strongly affected tribological properties of the Si-DLC film in sliding against steel

The measurement of phi 60 mm x 600 mu m silicon PIN detector gamma sensitivity and time respond

CERN Document Server

Hu Meng Chun; Ye Wen Ying

2002-01-01

phi 60 mm x 600 mu m silicon PIN detector is a large area and high sensitive one which has been developed in near years. The authors have measured their gamma sensitivity and the time response. The experiment and theoretical calculated results in: sup 6 sup 0 Co gamma sensitivity is about 5 fC centre dot cm sup 2 /MeV, the rise time is about 10 ns and the half-high-width time is about 35 ns

Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors

Directory of Open Access Journals (Sweden)

Jiahong Zhang

2016-10-01

Full Text Available In order to meet the requirement of high sensitivity and signal-to-noise ratios (SNR, this study develops and optimizes a piezoresistive pressure sensor by using double silicon nanowire (SiNW as the piezoresistive sensing element. First of all, ANSYS finite element method and voltage noise models are adopted to optimize the sensor size and the sensor output (such as sensitivity, voltage noise and SNR. As a result, the sensor of the released double SiNW has 1.2 times more sensitivity than that of single SiNW sensor, which is consistent with the experimental result. Our result also displays that both the sensitivity and SNR are closely related to the geometry parameters of SiNW and its doping concentration. To achieve high performance, a p-type implantation of 5 × 1018 cm−3 and geometry of 10 µm long SiNW piezoresistor of 1400 nm × 100 nm cross area and 6 µm thick diaphragm of 200 µm × 200 µm are required. Then, the proposed SiNW pressure sensor is fabricated by using the standard complementary metal-oxide-semiconductor (CMOS lithography process as well as wet-etch release process. This SiNW pressure sensor produces a change in the voltage output when the external pressure is applied. The involved experimental results show that the pressure sensor has a high sensitivity of 495 mV/V·MPa in the range of 0–100 kPa. Nevertheless, the performance of the pressure sensor is influenced by the temperature drift. Finally, for the sake of obtaining accurate and complete information over wide temperature and pressure ranges, the data fusion technique is proposed based on the back-propagation (BP neural network, which is improved by the particle swarm optimization (PSO algorithm. The particle swarm optimization–back-propagation (PSO–BP model is implemented in hardware using a 32-bit STMicroelectronics (STM32 microcontroller. The results of calibration and test experiments clearly prove that the PSO–BP neural network can be effectively applied

Microstructure and wear behavior of austempered high carbon high silicon steel

Directory of Open Access Journals (Sweden)

Acharya Palaksha

2018-01-01

Full Text Available In the present investigation, the influence of austempering temperature and time on the microstructure and dry sliding wear behavior of high silicon steel was studied. The test specimens were initially austenitised at 900°C for 30 minutes, thereafter austempered at various temperatures 280°C, 360°C and 400°C, for varying duration from 30 to 120 minutes. These samples after austempering heat treatment were subsequently air cooled to room temperature, to generate typical ausferritic microstructures and then correlated with the wear property. The test outcomes demonstrate the slight increase in specific wear rate with increase in both austempering temperature and time. Specific wear rate was found to be minimum at an austempering temperature of 280°C, that exhibits lower bainite microstructure with high hardness, on the other hand specific wear rate was found to be slightly high at increased austempering temperatures at 360°C and 400°C, due to the upper bainite structure that offered lower hardness to the matrix. The sample austempered at 280°C for 30 minutes offered superior wear resistance when compared to other austempering conditions, mainly due to the presence of fine acicular bainitic ferrite along with stabilized retained austenite and also some martensite in the microstructure.

A high-temperature silicon-on-insulator stress sensor

International Nuclear Information System (INIS)

Wang Zheyao; Tian Kuo; Zhou Youzheng; Pan Liyang; Liu Litian; Hu Chaohong

2008-01-01

A piezoresistive stress sensor is developed using silicon-on-insulator (SOI) wafers and calibrated for stress measurement for high-temperature applications. The stress sensor consists of 'silicon-island-like' piezoresistor rosettes that are etched on the SOI layer. This eliminates leakage current and enables excellent electrical insulation at high temperature. To compensate for the measurement errors caused by the misalignment of the piezoresistor rosettes with respect to the crystallographic axes, an anisotropic micromachining technique, tetramethylammonium hydroxide etching, is employed to alleviate the misalignment issue. To realize temperature-compensated stress measurement, a planar diode is fabricated as a temperature sensor to decouple the temperature information from the piezoresistors, which are sensitive to both stress and temperature. Design, fabrication and calibration of the piezoresistors are given. SOI-related characteristics such as piezoresistive coefficients and temperature coefficients as well as the influence of the buried oxide layer are discussed in detail

Tribological Investigation of SiC/Al Composite under Dry Sliding Friction

Directory of Open Access Journals (Sweden)

DAI Liquan

2016-12-01

Full Text Available The effect of sliding distances on aluminum matrix composite reinforced by silicon carbide particle with volume fraction of 9% was investigated. Friction behavior and wear resistance of the composite with distances of 5000 r, 10000 r and 20000 r were studied under dry sliding conditions of the same speed and load(200 r/min, 45 N. The results show that the friction coefficient in long-range sliding process displays three stages:wearing zone, stable zone and accelerating zone. The matrix surface produces severe adhesion because of the rising temperature and then leads plastic areas, in which both friction coefficient and wear rate are increased.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

High current density, cryogenically cooled sliding electrical joint development

International Nuclear Information System (INIS)

Murray, H.

1986-09-01

In the past two years, conceptual designs for fusion energy research devices have focussed on compact, high magnetic field configurations. The concept of sliding electrical joints in the large magnets allows a number of technical advantages including enhanced mechanical integrity, remote maintainability, and reduced project cost. The rationale for sliding electrical joints is presented. The conceptual configuration for this generation of experimental devices is highlghted by an ∼ 20 T toroidal field magnet with a flat top conductor current of ∼ 300 kA and a sliding electrical joint with a gross current density of ∼ 0.6 kA/cm 2 . A numerical model was used to map the conductor current distribution as a function of time and position in the conductor. A series of electrical joint arrangements were produced against the system code envelope constraints for a specific version of the Ignition Studies Project (ISP) which is designated as 1025

Slide 1

Indian Academy of Sciences (India)

Table of contents. Slide 1 · Slide 2 · Slide 3 · Slide 4 · Slide 5 · Slide 6 · Slide 7 · Immunology of VL · Slide 9 · Slide 10 · Slide 11 · Slide 12 · Slide 13 · Slide 14 · Strategies To Design Drugs · Slide 16 · Slide 17 · Slide 18 · Slide 19 · Slide 20 · Slide 21 · Slide 22 · Slide 23 · Slide 24 · Slide 25 · Slide 26 · Slide 27 · Slide 28.

Position sensitive silicon detectors inside the Tevatron collider

International Nuclear Information System (INIS)

Apollinari, G.; Bedeschi, F.; Bellettini, G.; Bosi, F.; Bosisio, L.; Cervelli, F.; Del Fabbro, R.; Dell'Orso, M.; Di Virgilio, A.; Focardi, E.; Giannetti, P.; Giorgi, M.; Menzione, A.; Ristori, L.; Scribano, A.; Sestini, P.; Stefanini, A.; Tonelli, G.; Zetti, F.; Bertolucci, S.; Cordelli, M.; Curatolo, M.; Dulach, B.; Esposito, B.; Giromini, P.; Miscetti, S.; Sansoni, A.

1986-01-01

Four position sensitive silicon detectors have been tested inside the Tevatron beam pipe at Fermilab. The system is the prototype of the small angle silicon spectrometer designed to study primarily p-anti p elastic and diffractive cross-sections at the Collider of Fermilab (CDF). Particles in the beam halo during p-anti p storage tests were used to study the performance of the detectors. Efficiency, linearity of response and spatial resolution are shown. Measurements performed at different distances from the beam axis have shown that the detectors could be operated at 8.5 mm from the beam with low rates and no disturbance to the circulating beams. This distance corresponds to about 11 times the standard half-width of the local beam envelope. The behaviour of the detectors with the radiation dose has also been investigated. (orig.)

Enhanced Raman scattering in porous silicon grating.

Science.gov (United States)

Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

2018-03-19

The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

Sensitivity study of the Storegga Slide tsunami using retrogressive and visco-plastic rheology models

Science.gov (United States)

Kim, Jihwan; Løvholt, Finn

2016-04-01

Enormous submarine landslides having volumes up to thousands of km3 and long run-out may cause tsunamis with widespread effects. Clay-rich landslides, such as Trænadjupet and Storegga offshore Norway commonly involve retrogressive mass and momentum release mechanisms that affect the tsunami generation. As a consequence, the failure mechanisms, soil parameters, and release rate of the retrogression are of importance for the tsunami generation. Previous attempts to model the tsunami generation due to retrogressive landslides are few, and limited to idealized conditions. Here, a visco-plastic model including additional effects such as remolding, time dependent mass release, and hydrodynamic resistance, is employed for simulating the Storegga Slide. As landslide strength parameters and their evolution in time are uncertain, it is necessary to conduct a sensitivity study to shed light on the tsunamigenic processes. The induced tsunami is simulated using Geoclaw. We also compare our tsunami simulations with recent analysis conducted using a pure retrogressive model for the landslide, as well as previously published results using a block model. The availability of paleotsunami run-up data and detailed slide deposits provides a suitable background for improved understanding of the slide mechanics and tsunami generation. The research leading to these results has received funding from the Research Council of Norway under grant number 231252 (Project TsunamiLand) and the European Union's Seventh Framework Programme (FP7/2007-2013) under grant agreement 603839 (Project ASTARTE).

Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

Science.gov (United States)

Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2014-07-01

We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

Slide 1

Indian Academy of Sciences (India)

Table of contents. Slide 1 · Slide 2 · Membrane Phospholipids · Slide 4 · NAE and NAPE · Biological and Pharmacological properties · Slide 7 · Slide 8 · Slide 9 · Slide 10 · Slide 11 · Slide 12 · Slide 13 · Slide 14 · Slide 15 · Slide 16 · Slide 17 · Slide 18 · Slide 19 · Slide 20 · Slide 21 · Slide 22 · Slide 23 · Slide 24 · Slide 25.

XPS study of palladium sensitized nano porous silicon thin film

Indian Academy of Sciences (India)

Keywords. Porous silicon; passivation; palladium; oxidation; XPS. Abstract. Nano porous silicon (PS) was formed on -type monocrystalline silicon of 2–5 cm resistivity and (100) orientation by electrochemical anodization method using HF and ethanol as the electrolytes. High density of surface states, arising due to its ...

Slide 1

Indian Academy of Sciences (India)

Table of contents. Slide 1 · Slide 2 · Slide 3 · Slide 4 · Slide 5 · Slide 6 · Slide 7 · Slide 8 · Slide 9 · Slide 10 · Slide 11 · Slide 12 · Slide 13 · Slide 14 · Slide 15 · Slide 16 · Slide 17.

On the origin of increased sensitivity and mass resolution using silicon masks in MALDI.

Science.gov (United States)

Diologent, Laurent; Franck, Julien; Wisztorski, Maxence; Treizebre, Anthony; Focsa, Cristian; Fournier, Isabelle; Ziskind, Michael

2014-02-04

Since its development, MALDI has proved its performance in the analysis of intact biomolecules up to high molecular weights, regardless of their polarity. Sensitivity of MALDI instruments is a key point for breaking the limits of observing biomolecules of lower abundances. Instrumentation is one way to improve sensitivity by increasing ion transmission and using more sensitive detection systems. On the other side, improving MALDI ion production yields would have important outcomes. MALDI ion production is still not well-controlled and, indeed, the amount of ions produced per laser shot with respect to the total volume of desorbed material is very low. This has particular implications for certain applications, such as MALDI MS imaging where laser beam focusing as fine as possible (5-10 μm) is searched in order to reach higher spatial resolution images. However, various studies point out an intrinsic decrease in signal intensity for strong focusing. We have therefore been interested in developing silicon mask systems to decrease an irradiated area by cutting rather than focusing the laser beam and to study the parameters affecting sensitivity using such systems. For this, we systematically examined variation with laser fluence of intensity and spectral resolution in MALDI of standard peptides when using silicon-etched masks of various aperture sizes. These studies demonstrate a simultaneous increase in spectral resolution and signal intensity. Origin of this effect is discussed in the frame of the two-step ionization model. Experimental data in the low fluence range are fitted with an increase of the primary ionization through matrix-silicon edge contact provided by the masks. On the other hand, behavior at higher fluence could be explained by an effect on the secondary ionization via changes in the plume dynamics.

Slide 1

Indian Academy of Sciences (India)

Slide 5 · Slide 6 · Second Question How Did this Shift in ToT Come About? Slide 8 · Second Question How Did this Shift in ToT Come About? Slide 10 · Slide 11 · Slide 12 · Slide 13 · Slide 14 · Slide 15 · Slide 17 · Slide 20 · Slide 21 · Slide 22 · Slide 23 · Slide 24 · Slide 25 · Slide 26 · Slide 27 · Slide 30 · India's Globalization.

High-performance silicon nanowire bipolar phototransistors

Science.gov (United States)

Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

2016-07-01

Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

SENSITIVITY TEMPERATURE DEPENDENCE RESEARCH OF TV-CAMERAS BASED ON SILICON MATRIXES

Directory of Open Access Journals (Sweden)

Alexey N. Starchenko

2017-07-01

Full Text Available Subject of Research. The research is dedicated to the analysis of sensitivity change patterns of the cameras based on silicon CMOS-matrixes in various ambient temperatures. This information is necessary for the correct camera application for photometric measurements in-situ. The paper deals with studies of sensitivity variations of two digital cameras with different silicon CMOS matrixes in visible and near IR regions of the spectrum at temperature change. Method. Due to practical restrictions the temperature changes were recorded in separate spectral intervals important for practical use of the cameras. The experiments were carried out with the use of a climatic chamber, providing change and keeping the temperature range from minus 40 to plus 50 °C at a pitch of 10 о С. Two cameras were chosen for research: VAC-135-IP with OmniVision OV9121 matrix and VAC-248-IP with OnSemiconductor VITA2000 matrix. The two tested devices were placed in a climatic chamber at the same time and illuminated by one radiation source with a color temperature about 3000 K in order to eliminate a number of methodological errors. Main Results. The temperature dependence of the signals was shown to be linear and the matrixes sensitivities were determined. The results obtained are consistent with theoretical views, in general. The coefficients of thermal sensitivity were computed by these dependencies. It is shown that the greatest affect of temperature on the sensitivity occurs in the area (0.7–1.1 mkm. Temperature coefficients of sensitivity increase with the downward radiation wavelength increase. The experiments carried out have shown that it is necessary to take into account the changes in temperature sensitivity of silicon matrixes in the red and near in IR regions of the spectrum. The effect reveals itself in a clearly negative way in cameras with an amplitude resolution of 10-12 bits used for aerospace and space spectrozonal photography. Practical Relevance

Novel method for the high-throughput processing of slides for the comet assay.

Science.gov (United States)

Karbaschi, Mahsa; Cooke, Marcus S

2014-11-26

Single cell gel electrophoresis (the comet assay), continues to gain popularity as a means of assessing DNA damage. However, the assay's low sample throughput and laborious sample workup procedure are limiting factors to its application. "Scoring", or individually determining DNA damage levels in 50 cells per treatment, is time-consuming, but with the advent of high-throughput scoring, the limitation is now the ability to process significant numbers of comet slides. We have developed a novel method by which multiple slides may be manipulated, and undergo electrophoresis, in batches of 25 rather than individually and, importantly, retains the use of standard microscope comet slides, which are the assay convention. This decreases assay time by 60%, and benefits from an electrophoresis tank with a substantially smaller footprint, and more uniform orientation of gels during electrophoresis. Our high-throughput variant of the comet assay greatly increases the number of samples analysed, decreases assay time, number of individual slide manipulations, reagent requirements and risk of damage to slides. The compact nature of the electrophoresis tank is of particular benefit to laboratories where bench space is at a premium. This novel approach is a significant advance on the current comet assay procedure.

Color sensitive silicon photomultiplers with micro-cell level encoding for DOI PET detectors

Science.gov (United States)

Shimazoe, Kenji; Koyama, Akihiro; Takahashi, Hiroyuki; Ganka, Thomas; Iskra, Peter; Marquez Seco, Alicia; Schneider, Florian; Wiest, Florian

2017-11-01

There have been many studies on Depth Of Interaction (DOI) identification for high resolution Positron Emission Tomography (PET) systems, including those on phoswich detectors, double-sided readout, light sharing methods, and wavelength discrimination. The wavelength discrimination method utilizes the difference in wavelength of stacked scintillators and requires a color sensitive photodetector. Here, a new silicon photomultiplier (SiPM) coupled to a color filter (colorSiPM) was designed and fabricated for DOI detection. The fabricated colorSiPM has two anode readouts that are sensitive to blue and green color. The colorSiPM's response and DOI identification capability for stacked GAGG and LYSO crystals are characterized. The fabricated colorSiPM is sensitive enough to detect a peak of 662 keV from a 137 Cs source.

Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

KAUST Repository

Yang, Xinbo

2017-05-31

Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.

Slide 1

Indian Academy of Sciences (India)

Table of contents. Slide 1 · Matsyagandhya A case of genetic disorder · Slide 3 · Slide 4 · Slide 5 · Slide 6 · Slide 7 · Active Site with Molybdopterin Ligation · Disadvantage of a Chemist to Model the Cofactor · Slide 10 · Slide 11 · Slide 12 · Active Site Investigation · Slide 14 · Slide 15 · Slide 16 · Slide 17 · Slide 18 · Slide 19.

Organic dye for highly efficient solid-state dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Schmidt-Mende, L.; Bach, U.; Humphry-Baker, R.; Ito, S.; Graetzel, M. [Institut des Sciences et Ingenierie Chimiques (ISIC), Laboratoire de Photonique et Interfaces (LPI), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Horiuchi, T.; Miura, H. [Technology Research Laboratory, Corporate Research Center, Mitsubishi Paper Mills Limited, 46, Wadai, Tsukuba City, Ibaraki 300-4247 (Japan); Uchida, S. [Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 1-1 Katahira 2-chome, Aoba-ku, Sendai 980-8577 (Japan)

2005-04-04

The feasibility of solid-state dye-sensitized solar cells as a low-cost alternative to amorphous silicon cells is demonstrated. Such a cell with a record efficiency of over 4 % under simulated sunlight is reported, made possible by using a new organic metal-free indoline dye as the sensitizer with high absorption coefficient. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

Iron solubility in highly boron-doped silicon

International Nuclear Information System (INIS)

McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

1998-01-01

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Slide system for machine tools

Science.gov (United States)

Douglass, Spivey S.; Green, Walter L.

1982-01-01

The present invention relates to a machine tool which permits the machining of nonaxisymmetric surfaces on a workpiece while rotating the workpiece about a central axis of rotation. The machine tool comprises a conventional two-slide system (X-Y) with one of these slides being provided with a relatively short travel high-speed auxiliary slide which carries the material-removing tool. The auxiliary slide is synchronized with the spindle speed and the position of the other two slides and provides a high-speed reciprocating motion required for the displacement of the cutting tool for generating a nonaxisymmetric surface at a selected location on the workpiece.

Slide 1

Indian Academy of Sciences (India)

Slide 25 · Life course epidemiology and chronic diseases · Models · Slide 28 · Slide 29 · Slide 30 · New Delhi Birth Cohort · New Delhi Birth Cohort (NDBC) · Slide 33 · Slide 34 · Slide 35 · Slide 36 · Slide 37 · Slide 38 · Slide 39 · CONCLUSIONS Urban Children and Adolescents · CONCLUSIONS New Delhi Birth Cohort.

Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

DEFF Research Database (Denmark)

Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

2004-01-01

Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

Slide layout and integrated design (SLIDE) program

International Nuclear Information System (INIS)

Roberts, S.G.

1975-01-01

SLIDE is a FORTRAN IV program for producing 35 mm color slides on the Control Data CYBER-74. SLIDE interfaces with the graphics package, DISSPLA, on the CYBER-74. It was designed so that persons with no previous computer experience can easily and quickly generate their own textual 35 mm color slides for verbal presentations. SLIDE's features include seven different colors, five text sizes, ten tab positions, and two page sizes. As many slides as desired may be produced during any one run of the program. Each slide is designed to represent an 8 1 / 2 in. x 11 in. or an 11 in. x 8 1 / 2 in. page. The input data cards required to run the SLIDE program and the program output are described. Appendixes contain a sample program run showing input, output, and the resulting slides produced and a FORTRAN listing of the SLIDE program. (U.S.)

High damage tolerance of electrochemically lithiated silicon

Science.gov (United States)

Wang, Xueju; Fan, Feifei; Wang, Jiangwei; Wang, Haoran; Tao, Siyu; Yang, Avery; Liu, Yang; Beng Chew, Huck; Mao, Scott X.; Zhu, Ting; Xia, Shuman

2015-01-01

Mechanical degradation and resultant capacity fade in high-capacity electrode materials critically hinder their use in high-performance rechargeable batteries. Despite tremendous efforts devoted to the study of the electro–chemo–mechanical behaviours of high-capacity electrode materials, their fracture properties and mechanisms remain largely unknown. Here we report a nanomechanical study on the damage tolerance of electrochemically lithiated silicon. Our in situ transmission electron microscopy experiments reveal a striking contrast of brittle fracture in pristine silicon versus ductile tensile deformation in fully lithiated silicon. Quantitative fracture toughness measurements by nanoindentation show a rapid brittle-to-ductile transition of fracture as the lithium-to-silicon molar ratio is increased to above 1.5. Molecular dynamics simulations elucidate the mechanistic underpinnings of the brittle-to-ductile transition governed by atomic bonding and lithiation-induced toughening. Our results reveal the high damage tolerance in amorphous lithium-rich silicon alloys and have important implications for the development of durable rechargeable batteries. PMID:26400671

Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

International Nuclear Information System (INIS)

Casse, G.; Glaser, M.; Lemeilleur, F.; Ruzin, A.; Wegrzecki, M.

1999-01-01

The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentration (>10 17 atoms cm -3 ) cannot readily be achieved during the FZ silicon refinement. The diffusion of oxygen at elevated temperatures from a SiO 2 layer grown on both sides of a silicon wafer is a simple and effective technique to achieve high and uniform concentrations of oxygen throughout the bulk of a 300 μm thick silicon wafer

High-efficient solar cells with porous silicon

International Nuclear Information System (INIS)

Migunova, A.A.

2002-01-01

It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

Silicon sensors for trackers at high-luminosity environment

Energy Technology Data Exchange (ETDEWEB)

Peltola, Timo, E-mail: timo.peltola@helsinki.fi

2015-10-01

The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

WTP Pretreatment Facility Potential Design Deficiencies--Sliding Bed and Sliding Bed Erosion Assessment

Energy Technology Data Exchange (ETDEWEB)

Hansen, E. K. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

2015-05-06

This assessment is based on readily available literature and discusses both Newtonian and non-Newtonian slurries with respect to sliding beds and erosion due to sliding beds. This report does not quantify the size of the sliding beds or erosion rates due to sliding beds, but only assesses if they could be present. This assessment addresses process pipelines in the Pretreatment (PT) facility and the high level waste (HLW) transfer lines leaving the PT facility to the HLW vitrification facility concentrate receipt vessel.

WTP Pretreatment Facility Potential Design Deficiencies--Sliding Bed and Sliding Bed Erosion Assessment

International Nuclear Information System (INIS)

Hansen, E. K.

2015-01-01

This assessment is based on readily available literature and discusses both Newtonian and non-Newtonian slurries with respect to sliding beds and erosion due to sliding beds. This report does not quantify the size of the sliding beds or erosion rates due to sliding beds, but only assesses if they could be present. This assessment addresses process pipelines in the Pretreatment (PT) facility and the high level waste (HLW) transfer lines leaving the PT facility to the HLW vitrification facility concentrate receipt vessel.

High-End Silicon PDICs

Directory of Open Access Journals (Sweden)

H. Zimmermann

2008-05-01

Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

High Order Sliding Mode Control of Doubly-fed Induction Generator under Unbalanced Grid Faults

DEFF Research Database (Denmark)

Zhu, Rongwu; Chen, Zhe; Wu, Xiaojie

2013-01-01

This paper deals with a doubly-fed induction generator-based (DFIG) wind turbine system under grid fault conditions such as: unbalanced grid voltage, three-phase grid fault, using a high order sliding mode control (SMC). A second order sliding mode controller, which is robust with respect...

Slide 1

Indian Academy of Sciences (India)

Potency of Stem Cells · Slide 3 · Slide 4 · Slide 5 · World Wide Clinical trials using MSCs · Slide 7 · Bone Marrow derived Human MSCs (hMSC) in culture · Slide 9 · Slide 10 · Slide 11 · Slide 12 · Slide 13 · Fetal MSCs · Morphology of murine fetal heart derived stem cells (fHSCs) · Growth Kinetics of fHSCs · Phenotype of ...

The Thermohydrodynamic Analysis of Sliding Bearing High-Speed Motorized Spindle by Rotor Dynamic

Directory of Open Access Journals (Sweden)

Li Songsheng

2017-01-01

Full Text Available This is paper presents thermohydrodynamic characteristics of high speed motorized spindle sliding bearing rotor system. The dynamic characteristic of the oil film bearing is affected by temperature increment, thereby affecting the high-speed spindle rotor system dynamics. This study applied the hydrodynamic lubrication theory, the influence of temperature on the viscosity of lubricating oil, associated with the bearing stiffness, oil film damping and other performance parameters, is considered in generalized Reynolds equation of oil film bearing. The theoretical model of the sliding bearing rotor system is established by using the transfer matrix method to analyze the dynamic characteristic and verified by experiments. The results show the high temperature environment in the motorized spindle and the friction of the bearing lead to oil temperature rise and viscosity reduction, which influences the bearing capacity, stiffness and damping, hence impact on the critical speeds and modal shapes of the sliding bearing rotor system.

Evolution of silicon sensor technology in particle physics

CERN Document Server

Hartmann, Frank

2017-01-01

This informative monograph describes the technological evolution of silicon detectors and their impact on high energy particle physics. The author here marshals his own first-hand experience in the development and also the realization of the DELPHI, CDF II and the CMS tracking detector. The basic principles of small strip- and pixel-detectors are presented and also the final large-scale applications. The Evolution of Silicon Detector Technology acquaints readers with the manifold challenges involving the design of sensors and pushing this technology to the limits. The expert will find critical information that is so far only available in various slide presentation scattered over the world wide web. This practical introduction of silicon sensor technology and its day to day life in the lab also offers many examples to illustrate problems and their solutions over several detector generations. The new edition gives a detailed overview of the silicon sensor technology used at the LHC, from basic principles to act...

High sensitivity boron quantification in bulk silicon using the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be nuclear reaction

Energy Technology Data Exchange (ETDEWEB)

Moro, Marcos V.; Silva, Tiago F. da; Added, Nemitala; Rizutto, Marcia A.; Tabacniks, Manfredo H. [Instituto de Fisica da Universidade de Sao Paulo, C.P. 66318, 05315-970 Sao Paulo, SP (Brazil); Neira, John B.; Neto, Joao B. F. [Institute of Research Tecnology, Cidade Universitaria, SP, 05508-091 (Brazil)

2013-05-06

There is a great need to quantify sub-ppm levels of boron in bulk silicon. There are several methods to analyze B in Si: Nuclear Reaction Analysis using the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be reaction exhibits a quantification limit of some hundreds ppm of B in Si. Heavy Ion Elastic Recoil Detection Analysis offers a detection limit of 5 to 10 at. ppm. Secondary Ion Mass Spectrometry is the method of choice of the semiconductor industry for the analysis of B in Si. This work verifies the use of NRA to quantify B in Si, and the corresponding detection limits. Proton beam with 1.6 up to 2.6 MeV was used to obtain the cross-section of the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be nuclear reaction at 170 Degree-Sign scattering angle. The results show good agreementwith literature indicating that the quantification of boron in silicon can be achieved at 100 ppm level (high sensitivity) at LAMFI-IFUSP with about 16% uncertainty. Increasing the detection solid angle and the collected beam charge, can reduce the detection limit to less than 100 ppm meeting present technological needs.

Towards a numerical run-out model for quick-clay slides

Science.gov (United States)

Issler, Dieter; L'Heureux, Jean-Sébastien; Cepeda, José M.; Luna, Byron Quan; Gebreslassie, Tesfahunegn A.

2015-04-01

Highly sensitive glacio-marine clays occur in many relatively low-lying areas near the coasts of eastern Canada, Scandinavia and northern Russia. If the load exceeds the yield stress of these clays, they quickly liquefy, with a reduction of the yield strength and the viscosity by several orders of magnitude. Leaching, fluvial erosion, earthquakes and man-made overloads, by themselves or combined, are the most frequent triggers of quick-clay slides, which are hard to predict and can attain catastrophic dimensions. The present contribution reports on two preparatory studies that were conducted with a view to creating a run-out model tailored to the characteristics of quick-clay slides. One study analyzed the connections between the morphological and geotechnical properties of more than 30 well-documented Norwegian quick-clay slides and their run-out behavior. The laboratory experiments by Locat and Demers (1988) suggest that the behavior of quick clays can be reasonably described by universal relations involving the liquidity index, plastic index, remolding energy, salinity and sensitivity. However, these tests should be repeated with Norwegian clays and analyzed in terms of a (shear-thinning) Herschel-Bulkley fluid rather than a Bingham fluid because the shear stress appears to grow in a sub-linear fashion with the shear rate. Further study is required to understand the discrepancy between the material parameters obtained in laboratory tests of material from observed slides and in back-calculations of the same slides with the simple model by Edgers & Karlsrud (1982). The second study assessed the capability of existing numerical flow models to capture the most important aspects of quick-clay slides by back-calculating three different, well documented events in Norway: Rissa (1978), Finneidfjord (1996) and Byneset (2012). The numerical codes were (i) BING, a quasi-two-dimensional visco-plastic model, (ii) DAN3D (2009 version), and (iii) MassMov2D. The latter two are

Practical application of silicon nitride ceramics for sliding parts of rotary engine

International Nuclear Information System (INIS)

Ueki, M.; Sato, Y.; Fukuda, K.

1994-01-01

Research on ceramic substitutes for the apex seals of the rotary engine have been carrying out. The aim of the substitution of apex seals, the development of high strength silicon nitride ceramics, and the application of the ceramic to the apex seals are described. The properties of silicon nitride ceramics used as apex seals in rotary engines for racing cars are presented. The apex seals were recovered from the rotary engines of racing cars in the 1989 and 1990 Le Mans 24-hour Grand Prix races, and the damage of the seals was investigated and analyzed in detail. One problem was the adhesion to the seals of the hardened chromium plating detached from the inside surface of the rotor housing. The adhesion of chromium caused the fine cracking and subsequent chipping of the apex seals. (orig.)

An ultra-high speed whole slide image viewing system.

Science.gov (United States)

Yagi, Yukako; Yoshioka, Shigeatsu; Kyusojin, Hiroshi; Onozato, Maristela; Mizutani, Yoichi; Osato, Kiyoshi; Yada, Hiroaki; Mark, Eugene J; Frosch, Matthew P; Louis, David N

2012-01-01

One of the goals for a Whole Slide Imaging (WSI) system is implementation in the clinical practice of pathology. One of the unresolved problems in accomplishing this goal is the speed of the entire process, i.e., from viewing the slides through making the final diagnosis. Most users are not satisfied with the correct viewing speeds of available systems. We have evaluated a new WSI viewing station and tool that focuses on speed. A prototype WSI viewer based on PlayStation®3 with wireless controllers was evaluated at the Department of Pathology at MGH for the following reasons: 1. For the simulation of signing-out cases; 2. Enabling discussion at a consensus conference; and 3. Use at slide seminars during a Continuing Medical Education course. Pathologists were being able to use the system comfortably after 0-15 min training. There were no complaints regarding speed. Most pathologists were satisfied with the functionality, usability and speed of the system. The most difficult situation was simulating diagnostic sign-out. The preliminary results of adapting the Sony PlayStation®3 (PS3®) as an ultra-high speed WSI viewing system were promising. The achieved speed is consistent with what would be needed to use WSI in daily practice.

Fabrication of detectors and transistors on high-resistivity silicon

International Nuclear Information System (INIS)

Holland, S.

1988-06-01

A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

Two-dimensional position sensitive silicon photodiode as a charged particle detector

International Nuclear Information System (INIS)

Kovacevic, K.; Zadro, M.

1999-01-01

A two-dimensional position sensitive silicon photodiode has been tested for measurement of position and energy of charged particles. Position nonlinearity and resolution, as well as energy resolution and ballistic deficit were measured for 5.486 MeV α-particles. The results obtained for different pulse shaping time constants are presented

Micro and Nano-structure Development and Multiscale Physics at Sliding Metal Interfaces

Energy Technology Data Exchange (ETDEWEB)

Rigney; David; A.

2006-06-01

This final report describes research on the response of ductile materials to extreme loading conditions and high strain rates during impact combined with sliding friction. The work has involved a collaboration among two groups at Los Alamos National Laboratory and a tribology research grouup at The Ohio State University. The project involved experimental work and computer simulations at both laboratories and continuum mechanics analysis at OSU, supplemented by testing at AWE, Harwell, UK. Results demonstrated the importance of vorticity and mechanical mixing near the sliding interface in the development of nanocrystalline tribomaterial that is far from equilibrium. The work also revealed that strain rate sensitivity is an important materials property for determining the development of the velocity profile during sliding. As such, it is a property that is key to understanding the evolution of sliding behavior.

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Long-term subglacial sliding patterns based on a sliding law with cavitation

DEFF Research Database (Denmark)

Ugelvig, Sofie Vej; Egholm, D.L.

In ice-sheet models and glacial landscape evolution models, subglacial sliding rates are often related to basal shear stress by a power-law. However, the power-law relationship implies that the subglacial bed can provide unlimited levels of basal drag as sliding rates increases, which is recognized...... as an inadequate assumption, particularly when the effects of subglacial cavities are considered (Schoof 2005). We have implemented a glacial sliding law suggested by Schoof (2005) in a depth-integrated higher-order ice-sheet model (Egholm et al. 2011) and coupled this to a model for glacial hydrology. The sliding...... law includes an upper bound to the basal drag and depends on the effects of longitudinal and transverse stress components for obtaining force balance along the glacier bed. Computational experiments indicate that high annually averaged sliding rates concentrate along valley sides when basal melt...

Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

International Nuclear Information System (INIS)

Miyoshi, K.; Buckley, D.H.

1978-04-01

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active metal is, and the greater resistance to shear it has, with the exception of rhodium and tungsten, the less transfer to silicon carbide

Ultracompact high-efficiency polarising beam splitter based on silicon nanobrick arrays.

Science.gov (United States)

Zheng, Guoxing; Liu, Guogen; Kenney, Mitchell Guy; Li, Zile; He, Ping'an; Li, Song; Ren, Zhi; Deng, Qiling

2016-03-21

Since the transmission of anisotropic nano-structures is sensitive to the polarisation of an incident beam, a novel polarising beam splitter (PBS) based on silicon nanobrick arrays is proposed. With careful design of such structures, an incident beam with polarisation direction aligned with the long axis of the nanobrick is almost totally reflected (~98.5%), whilst that along the short axis is nearly totally transmitted (~94.3%). More importantly, by simply changing the width of the nanobrick we can shift the peak response wavelength from 1460 nm to 1625 nm, covering S, C and L bands of the fiber telecommunications windows. The silicon nanobrick-based PBS can find applications in many fields which require ultracompactness, high efficiency, and compatibility with semiconductor industry technologies.

Three-dimensional (3D) plasma micro-nanotextured slides for high performance biomolecule microarrays: Comparison with epoxy-silane coated glass slides.

Science.gov (United States)

Tsougeni, Katerina; Ellinas, Kosmas; Koukouvinos, George; Petrou, Panagiota S; Tserepi, Angeliki; Kakabakos, Sotirios E; Gogolides, Evangelos

2018-05-01

Glass slides coated with a poly(methyl methacrylate) layer and plasma micro-nanotextured to acquire 3D topography (referred as 3D micro-nanotextured slides) were evaluated as substrates for biomolecule microarrays. Their performance is compared with that of epoxy-coated glass slides. We found that the proposed three-dimensional (3D) slides offered significant improvements in terms of spot intensity, homogeneity, and reproducibility. In particular, they provided higher spot intensity, by a factor of at least 1.5, and significantly improved spot homogeneity when compared to the epoxy-silane coated ones (intra-spot and between spot coefficients of variation ranging between 5 and 15% for the 3D micro-nanotextured slides and between 25 and 85% for the epoxy-silane coated ones). The latter was to a great extent the result of a strong "coffee-ring" effect observed for the spots created on the epoxy-coated slides; a phenomenon that was severely reduced in the 3D micro-nanotextured slides. The 3D micro-nanotextured slides offered in addition higher signal to noise ratio values over a wide range of protein probe concentrations and shelf-life over one year without requirement for specific storage conditions. Finally, the protocols employed for protein probe immobilization were extremely simple. Copyright © 2018 Elsevier B.V. All rights reserved.

Friction-induced nanofabrication on monocrystalline silicon

International Nuclear Information System (INIS)

Yu Bingjun; Qian Linmao; Yu Jiaxin; Zhou Zhongrong; Dong Hanshan; Chen Yunfei

2009-01-01

Fabrication of nanostructures has become a major concern as the scaling of device dimensions continues. In this paper, a friction-induced nanofabrication method is proposed to fabricate protrusive nanostructures on silicon. Without applying any voltage, the nanofabrication is completed by sliding an AFM diamond tip on a sample surface under a given normal load. Nanostructured patterns, such as linear nanostructures, nanodots or nanowords, can be fabricated on the target surface. The height of these nanostructures increases rapidly at first and then levels off with the increasing normal load or number of scratching cycles. TEM analyses suggest that the friction-induced hillock is composed of silicon oxide, amorphous silicon and deformed silicon structures. Compared to the tribochemical reaction, the amorphization and crystal defects induced by the mechanical interaction may have played a dominating role in the formation of the hillocks. Similar to other proximal probe methods, the proposed method enables fabrication at specified locations and facilitates measuring the dimensions of nanostructures with high precision. It is highlighted that the fabrication can also be realized on electrical insulators or oxide surfaces, such as quartz and glass. Therefore, the friction-induced method points out a new route in fabricating nanostructures on demand.

High-Order Sliding Mode-Based Synchronous Control of a Novel Stair-Climbing Wheelchair Robot

Directory of Open Access Journals (Sweden)

Juanxiu Liu

2015-01-01

Full Text Available For the attitude control of a novel stair-climbing wheelchair with inertial uncertainties and external disturbance torques, a new synchronous control method is proposed via combing high-order sliding mode control techniques with cross-coupling techniques. For this purpose, a proper controller is designed, which can improve the performance of the system under conditions of uncertainties and torque perturbations and also can guarantee the synchronization of the system. Firstly, a robust high-order sliding mode control law is designed to track the desired position trajectories effectively. Secondly, considering the coordination of the multiple joints, a high-order sliding mode synchronization controller is designed to reduce the synchronization errors and tracking errors based on the controller designed previously. Stability of the closed-loop system is proved by Lyapunov theory. The simulation is performed by MATLAB to verify the effectiveness of the proposed controller. By comparing the simulation results of two controllers, it is obvious that the proposed scheme has better performance and stronger robustness.

Self-Healing, High-Permittivity Silicone Dielectric Elastomer

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

2016-01-01

possesses high dielectric permittivity and consists of an interpenetrating polymer network of silicone elastomer and ionic silicone species that are cross-linked through proton exchange between amines and acids. The ionically cross-linked silicone provides self-healing properties after electrical breakdown...... or cuts made directly to the material due to the reassembly of the ionic bonds that are broken during damage. The dielectric elastomers presented in this paper pave the way to increased lifetimes and the ability of dielectric elastomers to survive millions of cycles in high-voltage conditions....

High-gain bipolar detector on float-zone silicon

Science.gov (United States)

Han, D. J.; Batignani, G.; Del Guerra, A.; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Giorgi, M.; Forti, F.

2003-10-01

Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be ˜7.77×10 4/s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83 μm has been observed for the same device.

High-gain bipolar detector on float-zone silicon

International Nuclear Information System (INIS)

Han, D.J.; Batignani, G.; Guerra, A.D.A. Del; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Giorgi, M.; Forti, F.

2003-01-01

Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be ∼7.77x10 4 /s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83 μm has been observed for the same device

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

International Nuclear Information System (INIS)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

2014-01-01

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

2014-11-10

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

Friction and dynamically dissipated energy dependence on temperature in polycrystalline silicon MEMS devices

NARCIS (Netherlands)

Gkouzou, A.; Kokorian, J.; Janssen, G.C.A.M.; van Spengen, W.M.

2017-01-01

In this paper, we report on the influence of capillary condensation on the sliding friction of sidewall surfaces in polycrystalline silicon micro-electromechanical
systems (MEMS). We developed a polycrystalline silicon MEMS tribometer, which is a microscale test device with two components

Influence for high intensity irradiation on characteristics of silicon strip-detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Pugatch, V.M.; Zinets, O.S.

1995-01-01

Full text: Silicon strip detectors (SSD) are widely used for the coordinate determination of short-range as well as minimum ionizing particles with high spatial resolution. Submicron position sensitivity of strip-detectors for short-range particles has been studied by means of two dimensional analyses of charges collected by neighboring strips as well as by measurement of charge collection times [1]. Silicon strip detectors was also used for testing high energy electron beam [2]. Under large fluences the radiation defects are stored and such characteristics of strip-detectors as an accuracy of the coordinate determination and the registration efficiency are significantly changed. Radiation defects lead to a decrease of the lifetime and mobility of charge carriers and therefore to changes of conditions for the charge collection in detectors. The inhomogeneity in spatial distribution if defects and electrical field plays an important role in the charge collection. In this report the role of the diffusion and drift in the charge collection in silicon strip-detectors under irradiation up to 10 Mrad has been studied. The electric field distribution and its dependence on the radiation dose in the detector have been calculated. It is shown that for particles incident between adjacent strips the coordinate determination precision depends strongly on the detector geometry and the electric field distribution, particularly in the vicinity of strips. Measuring simultaneously the collected charges and collection times on adjacent strips one can essentially improve reliability of the coordinate determination for short-range particles. Usually SSD are fabricated on n-type wafers. It is well known that under high intensity irradiation n-Si material converts into p-Si as far as p-type silicon is more radiative hard than n-type silicon [3] it is reasonable to fabricate SSD using high resistivity p-Si. Characteristics of SSD in basis n-and P-Si have been compared and higher

Performance of a malaria microscopy image analysis slide reading device

Directory of Open Access Journals (Sweden)

Prescott William R

2012-05-01

Full Text Available Abstract Background Viewing Plasmodium in Romanovsky-stained blood has long been considered the gold standard for diagnosis and a cornerstone in management of the disease. This method however, requires a subjective evaluation by trained, experienced diagnosticians and establishing proficiency of diagnosis is fraught with many challenges. Reported here is an evaluation of a diagnostic system (a “device” consisting of a microscope, a scanner, and a computer algorithm that evaluates scanned images of standard Giemsa-stained slides and reports species and parasitaemia. Methods The device was challenged with two independent tests: a 55 slide, expert slide reading test the composition of which has been published by the World Health Organization (“WHO55” test, and a second test in which slides were made from a sample of consenting subjects participating in a malaria incidence survey conducted in Equatorial Guinea (EGMIS test. These subjects’ blood was tested by malaria RDT as well as having the blood smear diagnosis unequivocally determined by a worldwide panel of a minimum of six reference microscopists. Only slides with unequivocal microscopic diagnoses were used for the device challenge, n = 119. Results On the WHO55 test, the device scored a “Level 4” using the WHO published grading scheme. Broken down by more traditional analysis parameters this result was translated to 89% and 70% sensitivity and specificity, respectively. Species were correctly identified in 61% of the slides and the quantification of parasites fell within acceptable range of the validated parasitaemia in 10% of the cases. On the EGMIS test it scored 100% and 94% sensitivity/specificity, with 64% of the species correct and 45% of the parasitaemia within an acceptable range. A pooled analysis of the 174 slides used for both tests resulted in an overall 92% sensitivity and 90% specificity with 61% species and 19% quantifications correct. Conclusions In its

Automated Slide Scanning and Segmentation in Fluorescently-labeled Tissues Using a Widefield High-content Analysis System.

Science.gov (United States)

Poon, Candice C; Ebacher, Vincent; Liu, Katherine; Yong, Voon Wee; Kelly, John James Patrick

2018-05-03

Automated slide scanning and segmentation of fluorescently-labeled tissues is the most efficient way to analyze whole slides or large tissue sections. Unfortunately, many researchers spend large amounts of time and resources developing and optimizing workflows that are only relevant to their own experiments. In this article, we describe a protocol that can be used by those with access to a widefield high-content analysis system (WHCAS) to image any slide-mounted tissue, with options for customization within pre-built modules found in the associated software. Not originally intended for slide scanning, the steps detailed in this article make it possible to acquire slide scanning images in the WHCAS which can be imported into the associated software. In this example, the automated segmentation of brain tumor slides is demonstrated, but the automated segmentation of any fluorescently-labeled nuclear or cytoplasmic marker is possible. Furthermore, there are a variety of other quantitative software modules including assays for protein localization/translocation, cellular proliferation/viability/apoptosis, and angiogenesis that can be run. This technique will save researchers time and effort and create an automated protocol for slide analysis.

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

Science.gov (United States)

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modified MIS-structure based on nanoporous silicon with enhanced sensitivity to the hydrogen containing gases

Energy Technology Data Exchange (ETDEWEB)

Gorbanyuk, T.; Evtukh, A.; Litovchenko, V.; Solntsev, V. [Institute of Semiconductor Physics, Kiev (Ukraine)

2008-07-01

The gas sensitivity of metal-insulator-semiconductor (MIS)-structures based on nanoporous silicon with active electrodes from palladium/tungsten oxide composite has been studied. It was found that the using of palladium/tungsten oxide composite (instead of thin palladium film) leads to enhanced sensitivity of MIS structures to hydrogen sulphide in air. The mechanism of this phenomenon has been established. The enhanced H{sub 2}S sensitivity is explained in the following way. The microparticles of tungsten trioxide inside palladium matrix stimulate the dissociation of hydrogen sulphide molecules, and hydrogen atoms and/or protons flow down to palladium surface, are absorbed by palladium volume, diffuse to palladium/oxidized nanoporous silicon interface. Hydrogen atoms adsorbed at the interface are polarized and give rise to a dipole layer. As a result, the voltage shift of the capacity-voltage (C-V) curve proportional to the measured gas concentration is observed. The surface microstructure of Pd/WO{sub 3} composite was studied by AFM microscopy. The chemical content of the composite film has been investigated by SIMS. It was found that the composite film on nanoporous silicon surface poses the holes with the size about 0.05 {mu}m, the mean separation between tungsten oxide microparticles is 1-2 {mu}m. It also was found that the using of the additional double layer polymer film (polymer film (phthalocyanine zinc)/semicon-ductor film (cadmium sulphide)) on composite film surface leads to the additional enhancement of the gas sensitivity to hydrogen sulphide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

14C autoradiography with an energy-sensitive silicon pixel detector.

Science.gov (United States)

Esposito, M; Mettivier, G; Russo, P

2011-04-07

The first performance tests are presented of a carbon-14 ((14)C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 µm thick silicon detector with 256 × 256 pixels of 55 µm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) × 10(-3) cps mm(-2) kBq(-1) g, background level, (3.59 ± 0.01) × 10(-5) cps mm(-2), and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 µm full-width at half-maximum. These figures are compared with several digital imaging detectors for (14)C beta-particle digital autoradiography.

Highly sensitive detection using microring resonator and nanopores

Science.gov (United States)

Bougot-Robin, K.; Hoste, J. W.; Le Thomas, N.; Bienstman, P.; Edel, J. B.

2016-04-01

One of the most significant challenges facing physical and biological scientists is the accurate detection and identification of single molecules in free-solution environments. The ability to perform such sensitive and selective measurements opens new avenues for a large number of applications in biological, medical and chemical analysis, where small sample volumes and low analyte concentrations are the norm. Access to information at the single or few molecules scale is rendered possible by a fine combination of recent advances in technologies. We propose a novel detection method that combines highly sensitive label-free resonant sensing obtained with high-Q microcavities and position control in nanoscale pores (nanopores). In addition to be label-free and highly sensitive, our technique is immobilization free and does not rely on surface biochemistry to bind probes on a chip. This is a significant advantage, both in term of biology uncertainties and fewer biological preparation steps. Through combination of high-Q photonic structures with translocation through nanopore at the end of a pipette, or through a solid-state membrane, we believe significant advances can be achieved in the field of biosensing. Silicon microrings are highly advantageous in term of sensitivity, multiplexing, and microfabrication and are chosen for this study. In term of nanopores, we both consider nanopore at the end of a nanopipette, with the pore being approach from the pipette with nanoprecise mechanical control. Alternatively, solid state nanopores can be fabricated through a membrane, supporting the ring. Both configuration are discussed in this paper, in term of implementation and sensitivity.

Using slides to test for changes in crown defoliation assessment methods. Part I: Visual assessment of slides.

Science.gov (United States)

Dobbertin, Matthias; Hug, Christian; Mizoue, Nobuya

2004-11-01

In this study we used photographs of tree crowns to test whether the assessment methods for tree defoliation in Switzerland have changed over time. We randomly selected 24 series of slides of Norway spruce with field assessments made between 1986 and 1995. The slides were randomly arranged and assessed by three experts without prior knowledge of the year when the slide was taken or the tree number. Defoliation was assessed using the Swiss reference photo guide. Although the correlations between the field assessments and slide assessments were high (Spearman's rank correlation coefficient ranged between 0.79 and 0.83), we found significant differences between field and slide assessments (4.3 to 9% underprediction by the slide assessors) and between the slide assessments. However, no significant trends in field assessment methods could be detected. When the mean differences between field and slide assessments were subtracted, in some years, field assessors consistently underpredicted (1990, 1992) or overpredicted defoliation (1987, 1991). Defoliation tended to be overpredicted in slides taken against the light, and underpredicted for trees with more than 25% crown overlap. We conclude that slide series can be used to detect changes in assessment methods. However, potential observer bias calls for more objective methods of assessment.

Ultra-high-speed Optical Signal Processing using Silicon Photonics

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

Improved performance of silicon-nanoparticle film-coated dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Gupta, Ravindra Kumar; Bedja, Idriss M. [CRC, Department of Optometry, College of Applied Medical Sciences, King Saud University, P.O. Box 10219, Riyadh 11433 (Saudi Arabia); Aldwayyan, Abdullah Saleh [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

2012-11-15

Silicon (Si) nanoparticles with average size of 13 nm and orange-red luminescence under UV absorption were synthesized using electrochemical etching of silicon wafers. A film of Si nanoparticles with thickness of 0.75 {mu}m to 2.6 {mu}m was coated on the glass (TiO{sub 2} side) of a dye-sensitized solar cell (DSSC). The cell exhibited nearly 9% enhancement in power conversion efficiency ({eta}) at film thickness of {proportional_to}2.4 {mu}m under solar irradiation of 100 mW/cm{sup 2} (AM 1.5) with improved fill factor and short-circuit current density. This study revealed for the first time that the Si-nanoparticle film converting UV into visible light and helping in homogeneous irradiation, can be utilized for improving the efficiency of the DSSCs. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

An Ultra-High Speed Whole Slide Image Viewing System

Directory of Open Access Journals (Sweden)

Yukako Yagi

2012-01-01

Full Text Available Background: One of the goals for a Whole Slide Imaging (WSI system is implementation in the clinical practice of pathology. One of the unresolved problems in accomplishing this goal is the speed of the entire process, i.e., from viewing the slides through making the final diagnosis. Most users are not satisfied with the correct viewing speeds of available systems. We have evaluated a new WSI viewing station and tool that focuses on speed.

Microcapillary Features in Silicon Alloyed High-Strength Cast Iron

Directory of Open Access Journals (Sweden)

R.K. Hasanli

2017-04-01

Full Text Available Present study explores features of silicon micro capillary in alloyed high-strength cast iron with nodular graphite (ductile iron produced in metal molds. It identified the nature and mechanism of micro liquation of silicon in a ductile iron alloyed with Nickel and copper, and demonstrated significant change of structural-quality characteristics. It was concluded that the matrix of alloyed ductile iron has a heterogeneous structure with cross reinforcement and high-silicon excrement areas.

Surface Modification Of The High Temperature Porous Sliding Bearings With Solid Lubricant Nanoparticles

Directory of Open Access Journals (Sweden)

Wiśniewska-Weinert H.

2015-09-01

Full Text Available A surface modification of stainless steel bearing sleeves is developed to improve the tribology characteristics at high temperature. Solid lubricant nano- and microparticles are applied for this purpose. To create the quasi-hydrodynamic lubrication regimes, the solid lubricant powder layer is made by developed pressure impregnation technique. Porous sliding bearing sleeve prototypes were made by powder metallurgy technique. The purpose of the paper is to define the friction and wear characteristics of the sleeves and to determine the influence of sealing of the sliding interface on these characteristics. It is found that application of WS2 sold lubricant nano- and micro-particles and preservation of a particle leakage out of interface allows to achieve at the high temperature the friction coefficients comparable to those at ambient temperature.

Cavitation contributes substantially to tensile creep in silicon nitride

International Nuclear Information System (INIS)

Luecke, W.E.; Wiederhorn, S.M.; Hockey, B.J.; Krause, R.F. Jr.; Long, G.G.

1995-01-01

During tensile creep of a hot isostatically pressed (HIPed) silicon nitride, the volume fraction of cavities increases linearly with strain; these cavities produce nearly all of the measured strain. In contrast, compressive creep in the same stress and temperature range produces very little cavitation. A stress exponent that increases with stress (var-epsilon ∝ σ n , 2 < n < 7) characterizes the tensile creep response, while the compressive creep response exhibits a stress dependence of unity. Furthermore, under the same stress and temperature, the material creeps nearly 100 times faster in tension than in compression. Transmission electron microscopy (TEM) indicates that the cavities formed during tensile creep occur in pockets of residual crystalline silicate phase located at silicon nitride multigrain junctions. Small-angle X-ray scattering (SAXS) from crept material quantifies the size distribution of cavities observed in TEM and demonstrates that cavity addition, rather than cavity growth, dominates the cavitation process. These observations are in accord with a model for creep based on the deformation of granular materials in which the microstructure must dilate for individual grains t slide past one another. During tensile creep the silicon nitride grains remain rigid; cavitation in the multigrain junctions allows the silicate to flow from cavities to surrounding silicate pockets, allowing the dilation of the microstructure and deformation of the material. Silicon nitride grain boundary sliding accommodates this expansion and leads to extension of the specimen. In compression, where cavitation is suppressed, deformation occurs by solution-reprecipitation of silicon nitride

SLIDES: a program to draw slides and posters

Energy Technology Data Exchange (ETDEWEB)

Bertrand, R.; Schofield, J.

1977-04-01

SLIDES is a program which takes text and commands as input and prepares lettered slides and posters. When run on the time-sharing computer, the program can display its output on an interactive graphics terminal; in batch, it can direct its graphical output to a variety of plotters. The program uses DISSPLA graphical subroutines and standard ANL plotter subroutines. This report contains material written for the beginning user, who should be able to produce useful slides or posters by following the examples. This report also serves as a complete reference for the SLIDES program. 4 figures.

Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

Directory of Open Access Journals (Sweden)

Sangchoel Kim

2013-10-01

Full Text Available We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5 layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

High sensitivity detection and characterization of the chemical state of trace element contamination on silicon wafers

CERN Document Server

Pianetta, Piero A; Baur, K; Brennan, S; Homma, T; Kubo, N

2003-01-01

Increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of metal contamination allowed on the surfaces of silicon wafers. Such contamination degrades the performance of the ultrathin SiO sub 2 gate dielectrics that form the heart of the individual transistors. Ultimately, reliability and yield are reduced to levels that must be improved before new processes can be put into production. It should be noted that much of this metal contamination occurs during the wet chemical etching and rinsing steps required for the manufacture of integrated circuits and industry is actively developing new processes that have already brought the metal contamination to levels beyond the measurement capabilities of conventional analytical techniques. The measurement of these extremely low contamination levels has required the use of synchrotron radiation total reflection X-ray fluorescence (SR-TXRF) where sensitivities 100 times better than conv...

A wide-bandwidth and high-sensitivity robust microgyroscope

International Nuclear Information System (INIS)

Sahin, Korhan; Sahin, Emre; Akin, Tayfun; Alper, Said Emre

2009-01-01

This paper reports a microgyroscope design concept with the help of a 2 degrees of freedom (DoF) sense mode to achieve a wide bandwidth without sacrificing mechanical and electronic sensitivity and to obtain robust operation against variations under ambient conditions. The design concept is demonstrated with a tuning fork microgyroscope fabricated with an in-house silicon-on-glass micromachining process. When the fabricated gyroscope is operated with a relatively wide bandwidth of 1 kHz, measurements show a relatively high raw mechanical sensitivity of 131 µV (° s −1 ) −1 . The variation in the amplified mechanical sensitivity (scale factor) of the gyroscope is measured to be less than 0.38% for large ambient pressure variations such as from 40 to 500 mTorr. The bias instability and angle random walk of the gyroscope are measured to be 131° h −1 and 1.15° h −1/2 , respectively

Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

2008-08-15

The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

Facile synthesis of silicon carbide-titanium dioxide semiconducting nanocomposite using pulsed laser ablation technique and its performance in photovoltaic dye sensitized solar cell and photocatalytic water purification

Energy Technology Data Exchange (ETDEWEB)

Gondal, M.A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Ilyas, A.M. [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Baig, Umair [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Center of Excellence for Scientific Research Collaboration with MIT, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

2016-08-15

Highlights: • SiC–TiO{sub 2} semiconducting nanocomposites synthesized by nanosecond PLAL technique. • Synthesized nanocomposites were morphologically and optically characterized. • Nanocomposites were applied for the photocatalytic degradation of toxic organic dye. • Photovoltaic performance was investigated in dye sensitized solar cell. - Abstract: Separation of photo-generated charge carriers (electron and holes) is a major approach to improve the photovoltaic and photocatalytic performance of metal oxide semiconductors. For harsh environment like high temperature applications, ceramic like silicon carbide is very prominent. In this work, 10%, 20% and 40% by weight of pre-oxidized silicon carbide was coupled with titanium dioxide (TiO{sub 2}) to form nanocomposite semiconductor via elegant pulsed laser ablation in liquid technique using second harmonic 532 nm wavelength of neodymium-doped yttrium aluminium garnet (Nd-YAG) laser. In addition, the effect of silicon carbide concentration on the performance of silicon carbide-titanium dioxide nanocomposite as photo-anode in dye sensitized solar cell and as photocatalyst in photodegradation of methyl orange dye in water was also studied. The result obtained shows that photo-conversion efficiency of the dye sensitized solar cell was improved from 0.6% to 1.65% and the percentage of methyl orange dye removed was enhanced from 22% to 77% at 24 min under ultraviolet–visible solar spectrum in the nanocomposite with 10% weight of silicon carbide. This remarkable performance enhancement could be due to the improvement in electron transfer phenomenon by the presence of silicon carbide on titanium dioxide.

Functional silicone copolymers and elastomers with high dielectric permittivity

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

Dielectric elastomers (DEs) are a new and promising transducer technology and are often referred to as ‘artificial muscles’, due to their ability to undergo large deformations when stimulated by electric fields. DEs consist of a soft and thin elastomeric film sandwiched between compliant electrodes......, thereby forming a capacitor [1]. Silicone elastomers are one of the most used materials for DEs due to their high efficiency, fast response times and low viscous losses. The major disadvantage of silicone elastomers is that they possess relatively low dielectric permittivity, which means that a high...... electrical field is necessary to operate the DE. The necessary electrical field can be lowered by creating silicone elastomers with higher dielectric permittivity, i.e. with a higher energy density.The aim of this work is to create new and improved silicone elastomers with high dielectric permittivity...

Slide Buyers Guide. 1974 Edition.

Science.gov (United States)

DeLaurier, Nancy

Designed for studio art instructors, museum education programs, public libraries, high school teachers, and those who buy slides for teaching art history at the college level, this guide lists sources of slides in the United States and over 20 foreign countries. All U.S. sources are listed first, commercial sources are alphabetical by name and…

Super soft silicone elastomers with high dielectric permittivity

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Hvilsted, Søren

2015-01-01

Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young’s modulus and increasing the dielectric permittivity of silicone...... elastomers. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. New soft elastomer matrices with high dielectric permittivity and low Young’s modulus, with no loss of mechanical stability, were prepared by two different...... approaches using chloropropyl-functional silicone polymers. The first approach was based on synthesised chloropropyl-functional copolymers that were cross-linkable and thereby formed the basis of new silicone networks with high dielectric permittivity (e.g. a 43% increase). These networks were soft without...

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

Science.gov (United States)

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-04-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices.

Acceleration Characteristics of a Rock Slide Using the Particle Image Velocimetry Technique

Directory of Open Access Journals (Sweden)

Guoqing Chen

2016-01-01

Full Text Available The Particle Image Velocimetry (PIV technique with high precision and spatial resolution is a suitable sensor for flow field experiments. In this paper, the PIV technology was used to monitor the development of a displacement field, velocity field and acceleration field of a rock slide. It was found that the peak acceleration of the sliding surface appeared earlier than the peak acceleration of the sliding body. The characteristics of the rock slide including the short failure time, high velocities, and large accelerations indicate that the sliding forces and energy release rate of the slope are high. The deformation field showed that the sliding body was sliding outwards along the sliding surface while the sliding bed moved in an opposite direction. Moving upwards at the top of the sliding bed can be one of the warning signs for rock slide failure.

Slide 1

Indian Academy of Sciences (India)

Projected Rainfall (Weighted Mean CDF; A1B scenario) · Slide 18 · Imprecise Probability · Bounds for Probability of Drought · Slide 21 · Possibility Distribution of GCMs and Scenarios · Mahanadi River Basin - Streamflow · Projections for future monsoon inflows to Hirakud Reservoir · Slide 25 · Rule curve for adaptive policies.

High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

KAUST Repository

Sevilla, Galo T.

2016-02-29

Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

Science.gov (United States)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

Process development for high-efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Gee, J.M.; Basore, P.A.; Buck, M.E.; Ruby, D.S.; Schubert, W.K.; Silva, B.L.; Tingley, J.W.

1991-12-31

Fabrication of high-efficiency silicon solar cells in an industrial environment requires a different optimization than in a laboratory environment. Strategies are presented for process development of high-efficiency silicon solar cells, with a goal of simplifying technology transfer into an industrial setting. The strategies emphasize the use of statistical experimental design for process optimization, and the use of baseline processes and cells for process monitoring and quality control. 8 refs.

On selecting a sensitive region thickness of a silicon semiconductor detector for operation under counting conditions

International Nuclear Information System (INIS)

Pronkin, N.S.; Khakhalin, V.V.

1972-01-01

The paper discusses the selection of a thickness of a sensitive area of a silicon semiconductor detector, used in the count regime based on the signal to noise ratio and β-radiation registration efficiency. (author)

Recyclability of mixed office waste papers containing pressure sensitive adhesives and silicone release liners

Science.gov (United States)

Julie Hess; Roberta Sena-Gomes; Lisa Davie; Marguerite Sykes

2001-01-01

Increased use of pressure sensitive adhesives for labels and stamps has introduced another contaminant into the office paper stream: silicone- coated release liners. This study examines methods and conditions for removal of contaminants, including these liners, from a typical batch of discarded office papers. Removal of contaminants contained in the furnish were...

Transitions from nanoscale to microscale dynamic friction mechanisms on polyethylene and silicon surfaces

International Nuclear Information System (INIS)

Niederberger, S.; Gracias, D. H.; Komvopoulos, K.; Somorjai, G. A.

2000-01-01

The dynamic friction mechanisms of polyethylene and silicon were investigated for apparent contact pressures and contact areas in the ranges of 8 MPa-18 GPa and 17 nm2-9500 μm2, respectively. Friction force measurements were obtained with a friction force microscope, scanning force microscope, and pin-on-disk tribometer. Silicon and diamond tips with a nominal radius of curvature between 100 nm and 1.2 mm were slid against low- and high-density polyethylene and Si(100) substrates under contact loads in the range of 5 nN-0.27 N. The low friction coefficients obtained with all material systems at low contact pressures indicated that deformation at the sliding interface was primarily elastic. Alternatively, the significantly higher friction coefficients at higher contact pressures suggested that plastic deformation was the principal mode of deformation. The high friction coefficients of polyethylene observed with large apparent contact areas are interpreted in terms of the microstructure evolution involving the rearrangement of crystalline regions (lamellae) nearly parallel to the sliding direction, which reduces the surface resistance to plastic shearing. Such differences in the friction behavior of polyethylene resulting from stress-induced microstructural changes were found to occur over a relatively large range of the apparent contact area. The friction behavior of silicon was strongly affected by the presence of a native oxide film. Results are presented to demonstrate the effect of the scale of deformation at the contact interface on the dynamic friction behavior and the significance of contact parameters on the friction measurements obtained with different instruments. (c) 2000 American Institute of Physics

Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

Energy Technology Data Exchange (ETDEWEB)

Calderon, A. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Martinez-Rivero, C. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Matorras, F. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Rodrigo, T. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Sobron, M. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Vila, I. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Alberdi, J. [CIEMAT, Madrid (Spain); Arce, P. [CIEMAT, Madrid (Spain); Barcala, J.M. [CIEMAT, Madrid (Spain); Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)]. E-mail: antonio.ferrando@ciemat.es; Josa, M.I. [CIEMAT, Madrid (Spain); Luque, J.M. [CIEMAT, Madrid (Spain); Molinero, A. [CIEMAT, Madrid (Spain); Navarrete, J. [CIEMAT, Madrid (Spain); Oller, J.C. [CIEMAT, Madrid (Spain); Yuste, C. [CIEMAT, Madrid (Spain); Koehler, C. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Lutz, B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Schubert, M.B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany)

2006-09-15

We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm{sup 2}) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3{mu}m, a spatial-point reconstruction precision better than 10{mu}m, deflection angles smaller than 10{mu}rad and a transmission power in the visible and NIR higher than 70%.

Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

International Nuclear Information System (INIS)

Calderon, A.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A.L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Luque, J.M.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Koehler, C.; Lutz, B.; Schubert, M.B.; Werner, J.H.

2006-01-01

We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm 2 ) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3μm, a spatial-point reconstruction precision better than 10μm, deflection angles smaller than 10μrad and a transmission power in the visible and NIR higher than 70%

Cones fabricated by 3D nanoimprint lithography for highly sensitive surface enhanced Raman spectroscopy

International Nuclear Information System (INIS)

Wu Wei; Hu Min; Ou Fungsuong; Li Zhiyong; Williams, R Stanley

2010-01-01

We demonstrated a cost-effective and deterministic method of patterning 3D cone arrays over a large area by using nanoimprint lithography (NIL). Cones with tip radius of less than 10 nm were successfully duplicated onto the UV-curable imprint resist materials from the silicon cone templates. Such cone structures were shown to be a versatile platform for developing reliable, highly sensitive surface enhanced Raman spectroscopy (SERS) substrates. In contrast to the silicon nanocones, the SERS substrates based on the Au coated cones made by the NIL offered significant improvement of the SERS signal. A further improvement of the SERS signal was observed when the polymer cones were imprinted onto a reflective metallic mirror surface. A sub-zeptomole detection sensitivity for a model molecule, trans-1,2-bis(4-pyridyl)-ethylene (BPE), on the Au coated NIL cone surfaces was achieved.

Biofunctionalization on Alkylated Silicon Substrate Surfaces via “Click” Chemistry

OpenAIRE

Qin, Guoting; Santos, Catherine; Zhang, Wen; Li, Yan; Kumar, Amit; Erasquin, Uriel J.; Liu, Kai; Muradov, Pavel; Trautner, Barbara Wells; Cai, Chengzhi

2010-01-01

Biofunctionalization of silicon substrates is important to the development of silicon-based biosensors and devices. Compared to conventional organosiloxane films on silicon oxide intermediate layers, organic monolayers directly bound to the non-oxidized silicon substrates via Si-C bonds enhance the sensitivity of detection and the stability against hydrolytic cleavage. Such monolayers presenting a high density of terminal alkynyl groups for bioconjugation via copper-catalyzed azide-alkyne 1,3...

Amorphous silicon radiation detectors

Science.gov (United States)

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Improvements in numerical modelling of highly injected crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Altermatt, P.P. [University of New South Wales, Centre for Photovoltaic Engineering, 2052 Sydney (Australia); Sinton, R.A. [Sinton Consulting, 1132 Green Circle, 80303 Boulder, CO (United States); Heiser, G. [University of NSW, School of Computer Science and Engineering, 2052 Sydney (Australia)

2001-01-01

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, n{sub i}=1.00x10{sup 10}cm{sup -3}, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of n{sub i} if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

High surface area silicon materials: fundamentals and new technology.

Science.gov (United States)

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Silicon Detectors for PET and SPECT

Science.gov (United States)

Cochran, Eric R.

Silicon detectors use state-of-the-art electronics to take advantage of the semiconductor properties of silicon to produce very high resolution radiation detectors. These detectors have been a fundamental part of high energy, nuclear, and astroparticle physics experiments for decades, and they hold great potential for significant gains in both PET and SPECT applications. Two separate prototype nuclear medicine imaging systems have been developed to explore this potential. Both devices take advantage of the unique properties of high resolution pixelated silicon detectors, designed and developed as part of the CIMA collaboration and built at The Ohio State University. The first prototype is a Compton SPECT imaging system. Compton SPECT, also referred to as electronic collimation, is a fundamentally different approach to single photon imaging from standard gamma cameras. It removes the inherent coupling of spatial resolution and sensitivity in mechanically collimated systems and provides improved performance at higher energies. As a result, Compton SPECT creates opportunities for the development of new radiopharmaceuticals based on higher energy isotopes as well as opportunities to expand the use of current isotopes such as 131I due to the increased resolution and sensitivity. The Compton SPECT prototype consists of a single high resolution silicon detector, configured in a 2D geometry, in coincidence with a standard NaI scintillator detector. Images of point sources have been taken for 99mTc (140 keV), 131I (364keV), and 22Na (511 keV), demonstrating the performance of high resolution silicon detectors in a Compton SPECT system. Filtered back projection image resolutions of 10 mm, 7.5 mm, and 6.7 mm were achieved for the three different sources respectively. The results compare well with typical SPECT resolutions of 5-15 mm and validate the claims of improved performance in Compton SPECT imaging devices at higher source energies. They also support the potential of

Coefficients of sliding friction of single crystals of high explosives under different rubbing conditions

International Nuclear Information System (INIS)

Wu, Y Q; Chaudhri, M Munawar

2013-01-01

The coefficients of sliding friction of single crystals of commonly used high explosives pentaerythritol tetranitrate (PETN), cyclotrimethylene trinitramine (RDX) and beta-cyclotetramethylene tetranitramine (β-HMX) under several rubbing configurations and at a relative sliding speed of 0.22 mm s -1 were measured. The sliding configurations were (1) crystal-polished steel pairs, (2) like-crystal pairs and (3) unlike-crystal pairs. For every rubbing configuration the friction force showed oscillations, which are thought to be caused by the formation and shearing of the adhesive junctions formed at the surface of the rubbing crystals. This shearing of the adhesive junctions led to the formation of microscopic and sub-microscopic particles, which were confirmed by an environmental scanning electron microscope study. For every rubbing configuration and for relatively high normal loads pressing the rubbing crystals together, the coefficient of friction was generally in the range 0.2-0.25 and it has been concluded that the coefficient of friction is controlled by the adhesion with almost negligible contribution from the ploughing component. From a knowledge of the coefficient of friction and the uniaxial yield stress values of single crystals of RDX and β-HMX, the shear strength of these crystals were determined to be ∼13.4 MPa and ∼16.8 MPa, respectively.

A progress report on the LDRD project entitled {open_quotes}Microelectronic silicon-based chemical sensors: Ultradetection of high value molecules{close_quotes}

Energy Technology Data Exchange (ETDEWEB)

Hughes, R.C.

1996-09-01

This work addresses a new kind of silicon based chemical sensor that combines the reliability and stability of silicon microelectronic field effect devices with the highly selective and sensitive immunoassay. The sensor works on the principle that thin SiN layers on lightly doped Si can detect pH changes rapidly and reversibly. The pH changes affect the surface potential, and that can be quickly determined by pulsed photovoltage measurements. To detect other species, chemically sensitive films were deposited on the SiN where the presence of the chosen analyte results in pH changes through chemical reactions. A invention of a cell sorting device based on these principles is also described. A new method of immobilizing enzymes using Sandia`s sol-gel glasses is documented and biosensors based on the silicon wafer and an amperometric technique are detailed.

Accurate Sliding-Mode Control System Modeling for Buck Converters

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

2007-01-01

This paper shows that classical sliding mode theory fails to correctly predict the output impedance of the highly useful sliding mode PID compensated buck converter. The reason for this is identified as the assumption of the sliding variable being held at zero during sliding mode, effectively...... approach also predicts the self-oscillating switching action of the sliding-mode control system correctly. Analytical findings are verified by simulation as well as experimentally in a 10-30V/3A buck converter....

Tribology of silicon-thin-film-coated SiC ceramics and the effects of high energy ion irradiation

International Nuclear Information System (INIS)

Kohzaki, Masao; Noda, Shoji; Doi, Harua

1990-01-01

The sliding friction coefficients and specific wear of SiC ceramics coated with a silicon thin film (Si/SiC) with and without subsequent Ar + irradiation against a diamond pin were measured with a pin-on-disk tester at room temperature in laboratory air of approximately 50% relative humidity without oil lubrication for 40 h. The friction coefficient of Ar + -irradiated Si/SiC was about 0.05 with a normal load of 9.8 N and remained almost unchanged during the 40 h test, while that of SiC increased from 0.04 to 0.12 during the test. The silicon deposition also reduced the specific wear of SiC to less than one tenth of that of the uncoated SiC. Effectively no wear was detected in Si/SiC irradiated to doses of over 2x10 16 ions cm -2 . (orig.)

Silicon-embedded copper nanostructure network for high energy storage

Science.gov (United States)

Yu, Tianyue

2016-03-15

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

Silicon-embedded copper nanostructure network for high energy storage

Energy Technology Data Exchange (ETDEWEB)

Yu, Tianyue

2018-01-23

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip

CERN Document Server

Schioppa, E. J.; van Beuzekom, M.; Visser, J.; Koffeman, E.; Heijne, E.; Engel, K. J.; Uher, J.

2015-01-01

A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse profile of the charge carriers cloud in the sensor as a function of the drift distance from the point of generation. The result does not rely on model assumptions or electric field calculations. The data are also used to validate numerical simulations and to predict the detector spectral response to an X-ray fluorescence spectrum for applications in X-ray imaging.

Corrosion of silicon nitride in high temperature alkaline solutions

Energy Technology Data Exchange (ETDEWEB)

Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

2016-08-01

The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

International Nuclear Information System (INIS)

Gessner, T.; Irmer, K.

1983-01-01

A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

On determining dead layer and detector thicknesses for a position-sensitive silicon detector

Science.gov (United States)

Manfredi, J.; Lee, Jenny; Lynch, W. G.; Niu, C. Y.; Tsang, M. B.; Anderson, C.; Barney, J.; Brown, K. W.; Chajecki, Z.; Chan, K. P.; Chen, G.; Estee, J.; Li, Z.; Pruitt, C.; Rogers, A. M.; Sanetullaev, A.; Setiawan, H.; Showalter, R.; Tsang, C. Y.; Winkelbauer, J. R.; Xiao, Z.; Xu, Z.

2018-04-01

In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a 212Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.

ISPA (imaging silicon pixel array) experiment

CERN Multimedia

Patrice Loïez

2002-01-01

The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

Sliding mode control and observation

CERN Document Server

Shtessel, Yuri; Fridman, Leonid; Levant, Arie

2014-01-01

The sliding mode control methodology has proven effective in dealing with complex dynamical systems affected by disturbances, uncertainties and unmodeled dynamics. Robust control technology based on this methodology has been applied to many real-world problems, especially in the areas of aerospace control, electric power systems, electromechanical systems, and robotics. Sliding Mode Control and Observation represents the first textbook that starts with classical sliding mode control techniques and progresses toward newly developed higher-order sliding mode control and observation algorithms and their applications. The present volume addresses a range of sliding mode control issues, including: *Conventional sliding mode controller and observer design *Second-order sliding mode controllers and differentiators *Frequency domain analysis of conventional and second-order sliding mode controllers *Higher-order sliding mode controllers and differentiators *Higher-order sliding mode observers *Sliding mode disturbanc...

Ultra-sensitive and selective detection of mercury ion (Hg2+) using free-standing silicon nanowire sensors

Science.gov (United States)

Jin, Yan; Gao, Anran; Jin, Qinghui; Li, Tie; Wang, Yuelin; Zhao, Jianlong

2018-04-01

In this paper, ultra-sensitive and highly selective Hg2+ detection in aqueous solutions was studied by free-standing silicon nanowire (SiNW) sensors. The all-around surface of SiNW arrays was functionalized with (3-Mercaptopropyl)trimethoxysilane serving as Hg2+ sensitive layer. Due to effective electrostatic control provided by the free-standing structure, a detection limit as low as 1 ppt was obtained. A linear relationship (R 2 = 0.9838) between log(CHg2+ ) and a device current change from 1 ppt to 5 ppm was observed. Furthermore, the developed SiNW sensor exhibited great selectivity for Hg2+ over other heavy metal ions, including Cd2+. Given the extraordinary ability for real-time Hg2+ detection, the small size and low cost of the SiNW device, it is expected to be a potential candidate in field detection of environmentally toxic mercury.

Continuing Medical Education Speakers with High Evaluation Scores Use more Image-based Slides

Directory of Open Access Journals (Sweden)

Ferguson, Ian

2017-01-01

Full Text Available Although continuing medical education (CME presentations are common across health professions, it is unknown whether slide design is independently associated with audience evaluations of the speaker. Based on the conceptual framework of Mayer’s theory of multimedia learning, this study aimed to determine whether image use and text density in presentation slides are associated with overall speaker evaluations. This retrospective analysis of six sequential CME conferences (two annual emergency medicine conferences over a three-year period used a mixed linear regression model to assess whether postconference speaker evaluations were associated with image fraction (percentage of image-based slides per presentation and text density (number of words per slide. A total of 105 unique lectures were given by 49 faculty members, and 1,222 evaluations (70.1% response rate were available for analysis. On average, 47.4% (SD=25.36 of slides had at least one educationally-relevant image (image fraction. Image fraction significantly predicted overall higher evaluation scores [F(1, 100.676=6.158, p=0.015] in the mixed linear regression model. The mean (SD text density was 25.61 (8.14 words/slide but was not a significant predictor [F(1, 86.293=0.55, p=0.815]. Of note, the individual speaker [χ2 (1=2.952, p=0.003] and speaker seniority [F(3, 59.713=4.083, p=0.011] significantly predicted higher scores. This is the first published study to date assessing the linkage between slide design and CME speaker evaluations by an audience of practicing clinicians. The incorporation of images was associated with higher evaluation scores, in alignment with Mayer’s theory of multimedia learning. Contrary to this theory, however, text density showed no significant association, suggesting that these scores may be multifactorial. Professional development efforts should focus on teaching best practices in both slide design and presentation skills.

Continuing Medical Education Speakers with High Evaluation Scores Use more Image-based Slides.

Science.gov (United States)

Ferguson, Ian; Phillips, Andrew W; Lin, Michelle

2017-01-01

Although continuing medical education (CME) presentations are common across health professions, it is unknown whether slide design is independently associated with audience evaluations of the speaker. Based on the conceptual framework of Mayer's theory of multimedia learning, this study aimed to determine whether image use and text density in presentation slides are associated with overall speaker evaluations. This retrospective analysis of six sequential CME conferences (two annual emergency medicine conferences over a three-year period) used a mixed linear regression model to assess whether post-conference speaker evaluations were associated with image fraction (percentage of image-based slides per presentation) and text density (number of words per slide). A total of 105 unique lectures were given by 49 faculty members, and 1,222 evaluations (70.1% response rate) were available for analysis. On average, 47.4% (SD=25.36) of slides had at least one educationally-relevant image (image fraction). Image fraction significantly predicted overall higher evaluation scores [F(1, 100.676)=6.158, p=0.015] in the mixed linear regression model. The mean (SD) text density was 25.61 (8.14) words/slide but was not a significant predictor [F(1, 86.293)=0.55, p=0.815]. Of note, the individual speaker [χ 2 (1)=2.952, p=0.003] and speaker seniority [F(3, 59.713)=4.083, p=0.011] significantly predicted higher scores. This is the first published study to date assessing the linkage between slide design and CME speaker evaluations by an audience of practicing clinicians. The incorporation of images was associated with higher evaluation scores, in alignment with Mayer's theory of multimedia learning. Contrary to this theory, however, text density showed no significant association, suggesting that these scores may be multifactorial. Professional development efforts should focus on teaching best practices in both slide design and presentation skills.

High frequency guided wave propagation in monocrystalline silicon wafers

OpenAIRE

Pizzolato, M.; Masserey, B.; Robyr, J. L.; Fromme, P.

2017-01-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full...

Highly sensitive polymer-based cantilever-sensors for DNA detection

International Nuclear Information System (INIS)

Calleja, M.; Nordstroem, M.; Alvarez, M.; Tamayo, J.; Lechuga, L.M.; Boisen, A.

2005-01-01

We present a technology for the fabrication of cantilever arrays aimed to develop an integrated biosensor microsystem. The fabrication process is based on spin coating of the photosensitive polymer and near-ultraviolet exposure. Arrays of up to 33 microcantilevers are fabricated in the novel polymer material SU-8. The low Young's modulus of the polymer, 40 times lower than that of silicon, enables to improve the sensitivity of the sensor device for target detection. The mechanical properties of SU-8 cantilevers, such as spring constant, resonant frequency and quality factor are characterized as a function of the dimensions and the medium. The devices have been tested for measurement of the adsorption of single stranded DNA and subsequent interstitial adsorption of lateral spacer molecules. We demonstrate that sensitivity is enhanced by a factor of six compared to that of commercial silicon nitride cantilevers

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

A high rate, low noise, x-ray silicon strip detector system

International Nuclear Information System (INIS)

Ludewigt, B.; Jaklevic, J.; Kipnis, I.; Rossington, C.; Spieler, H.

1993-11-01

An x-ray detector system, based on a silicon strip detector wire-bonded to a low noise charge-senstive amplifier integrated circuit, has been developed for synchrotron radiation experiments which require very high count rates and good energy resolution. Noise measurements and x-ray spectra were taken using a 6 mm long, 55 μm pitch strip detector in conjunction with a prototype 16-channel charge-sensitive preamplifier, both fabricated using standard 1.2 μm CMOS technology. The detector system currently achieves an energy resolution of 350 eV FWHM at 5.9 key, 2 μs peaking time, when cooled to -5 degree C

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

Science.gov (United States)

Mishina, H.; Buckley, D. H.

1984-01-01

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Robust sliding-window reconstruction for Accelerating the acquisition of MR fingerprinting.

Science.gov (United States)

Cao, Xiaozhi; Liao, Congyu; Wang, Zhixing; Chen, Ying; Ye, Huihui; He, Hongjian; Zhong, Jianhui

2017-10-01

To develop a method for accelerated and robust MR fingerprinting (MRF) with improved image reconstruction and parameter matching processes. A sliding-window (SW) strategy was applied to MRF, in which signal and dictionary matching was conducted between fingerprints consisting of mixed-contrast image series reconstructed from consecutive data frames segmented by a sliding window, and a precalculated mixed-contrast dictionary. The effectiveness and performance of this new method, dubbed SW-MRF, was evaluated in both phantom and in vivo. Error quantifications were conducted on results obtained with various settings of SW reconstruction parameters. Compared with the original MRF strategy, the results of both phantom and in vivo experiments demonstrate that the proposed SW-MRF strategy either provided similar accuracy with reduced acquisition time, or improved accuracy with equal acquisition time. Parametric maps of T 1 , T 2 , and proton density of comparable quality could be achieved with a two-fold or more reduction in acquisition time. The effect of sliding-window width on dictionary sensitivity was also estimated. The novel SW-MRF recovers high quality image frames from highly undersampled MRF data, which enables more robust dictionary matching with reduced numbers of data frames. This time efficiency may facilitate MRF applications in time-critical clinical settings. Magn Reson Med 78:1579-1588, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2016 International Society for Magnetic Resonance in Medicine.

Functionalization of 2D macroporous silicon under the high-pressure oxidation

Science.gov (United States)

Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

2018-03-01

Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

Tactile Sliding Behavior of R2R Mass-Produced PLLA Nanosheet towards Biomedical Device in Skin Applications

Directory of Open Access Journals (Sweden)

Sheng Zhang

2018-03-01

Full Text Available In this research, sliding friction was measured between the fingertip and nanosheet on a silicon substrate under two conditions: dry and wet. By using a force transducer, the tactile friction force and applied load were measured. According to the experimental results, the relationship of friction force and applied load exhibits a positive correlation under both dry and wet conditions. In addition, the nanosheets are able to reduce the friction force and coefficient of friction (COF compared to the reference sample, especially under the wet condition. Under the assumption of a full contact condition, the estimated contact area increases with larger applied loads. Furthermore, based on the wear observation, the skin sliding performance caused slight abrasions to the surface of the nanosheet samples with a mild wear track along the sliding direction. Overall, the sliding behavior between the skin and nanosheet was investigated in terms of friction force, COF, applied load, contact area, and wear. These findings can contribute to the nanosheet-related research towards biomedical devices in skin applications.

Adaptive Fuzzy Integral Sliding-Mode Regulator for Induction Motor Using Nonlinear Sliding Surface

OpenAIRE

Yong-Kun Lu

2015-01-01

An adaptive fuzzy integral sliding-mode controller using nonlinear sliding surface is designed for the speed regulator of a field-oriented induction motor drive in this paper. Combining the conventional integral sliding surface with fractional-order integral, a nonlinear sliding surface is proposed for the integral sliding-mode speed control, which can overcome the windup problem and the convergence speed problem. An adaptive fuzzy control term is utilized to approximate the uncertainty. The ...

Photonic Crystal Sensors Based on Porous Silicon

Directory of Open Access Journals (Sweden)

Claudia Pacholski

2013-04-01

Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

Photonic Crystal Sensors Based on Porous Silicon

Science.gov (United States)

Pacholski, Claudia

2013-01-01

Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

Image Montaging for Creating a Virtual Pathology Slide: An Innovative and Economical Tool to Obtain a Whole Slide Image.

Science.gov (United States)

Banavar, Spoorthi Ravi; Chippagiri, Prashanthi; Pandurangappa, Rohit; Annavajjula, Saileela; Rajashekaraiah, Premalatha Bidadi

2016-01-01

Background . Microscopes are omnipresent throughout the field of biological research. With microscopes one can see in detail what is going on at the cellular level in tissues. Though it is a ubiquitous tool, the limitation is that with high magnification there is a small field of view. It is often advantageous to see an entire sample at high magnification. Over the years technological advancements in optics have helped to provide solutions to this limitation of microscopes by creating the so-called dedicated "slide scanners" which can provide a "whole slide digital image." These scanners can provide seamless, large-field-of-view, high resolution image of entire tissue section. The only disadvantage of such complete slide imaging system is its outrageous cost, thereby hindering their practical use by most laboratories, especially in developing and low resource countries. Methods . In a quest for their substitute, we tried commonly used image editing software Adobe Photoshop along with a basic image capturing device attached to a trinocular microscope to create a digital pathology slide. Results . The seamless image created using Adobe Photoshop maintained its diagnostic quality. Conclusion . With time and effort photomicrographs obtained from a basic camera-microscope set up can be combined and merged in Adobe Photoshop to create a whole slide digital image of practically usable quality at a negligible cost.

Rhodium Nanoparticle-mesoporous Silicon Nanowire Nanohybrids for Hydrogen Peroxide Detection with High Selectivity

Science.gov (United States)

Song, Zhiqian; Chang, Hucheng; Zhu, Weiqin; Xu, Chenlong; Feng, Xinjian

2015-01-01

Developing nanostructured electrocatalysts, with low overpotential, high selectivity and activity has fundamental and technical importance in many fields. We report here rhodium nanoparticle and mesoporous silicon nanowire (RhNP@mSiNW) hybrids for hydrogen peroxide (H2O2) detection with high electrocatalytic activity and selectivity. By employing electrodes that loaded with RhNP@mSiNW nanohybrids, interference caused from both many electroactive substances and dissolved oxygen were eliminated by electrochemical assaying at an optimal potential of +75 mV. Furthermore, the electrodes exhibited a high detection sensitivity of 0.53 μA/mM and fast response (< 5 s). This high-performance nanohybrid electrocatalyst has great potential for future practical application in various oxidase-base biosensors. PMID:25588953

Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

Science.gov (United States)

Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

2015-02-07

Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

A broadband-sensitive upconverter La(Ga0.5Sc0.5)O3:Er,Ni,Nb for crystalline silicon solar cells

International Nuclear Information System (INIS)

Takeda, Yasuhiko; Mizuno, Shintaro; Luitel, Hom Nath; Tani, Toshihiko

2016-01-01

We have developed an upconverter that significantly broadens the sensitive range, to overcome the shortcoming that conventional Er 3+ -doped upconverters used for crystalline silicon solar cells can utilize only a small portion of the solar spectrum at around 1.55 μm. We have designed the combination of the sensitizers and host material to utilize photons not absorbed by silicon or Er 3+ ions. Ni 2+ ions have been selected as the sensitizers that absorb photons in the wavelength range between the silicon absorption edge (1.1 μm) and the Er 3+ absorption band and transfer the energies to the Er 3+ emitters, with La(Ga,Sc)O 3 as the host material. The Ga to Sc ratio has been optimized to tune the location of the Ni 2+ absorption band for sufficient energy transfer. Co-doping with Nb 5+ ions is needed for charge balance to introduce divalent Ni 2+ ions into the trivalent Ga 3+ and Sc 3+ sites. In addition to 1.45–1.58 μm photons directly absorbed by the Er 3+ ions, we have demonstrated upconversion of 1.1–1.35 μm photons in the Ni 2+ absorption band to 0.98 μm photons, using 10% Er, 0.5% Ni, and 0.5% Nb-doped La(Ga 0.5 Sc 0.5 )O 3 . The broadband-sensitive upconverter developed here can improve conversion efficiency of crystalline silicon solar cells more notably than conventional ones

Ductile cutting of silicon microstructures with surface inclination measurement and compensation by using a force sensor integrated single point diamond tool

International Nuclear Information System (INIS)

Chen, Yuan-Liu; Cai, Yindi; Shimizu, Yuki; Ito, So; Gao, Wei; Ju, Bing-Feng

2016-01-01

This paper presents a measurement and compensation method of surface inclination for ductile cutting of silicon microstructures by using a diamond tool with a force sensor based on a four-axis ultra-precision lathe. The X- and Y-directional inclinations of a single crystal silicon workpiece with respect to the X- and Y-motion axes of the lathe slides were measured respectively by employing the diamond tool as a touch-trigger probe, in which the tool-workpiece contact is sensitively detected by monitoring the force sensor output. Based on the measurement results, fabrication of silicon microstructures can be thus carried out directly along the tilted silicon workpiece by compensating the cutting motion axis to be parallel to the silicon surface without time-consuming pre-adjustment of the surface inclination or turning of a flat surface. A diamond tool with a negative rake angle was used in the experiment for superior ductile cutting performance. The measurement precision by using the diamond tool as a touch-trigger probe was investigated. Experiments of surface inclination measurement and ultra-precision ductile cutting of a micro-pillar array and a micro-pyramid array with inclination compensation were carried out respectively to demonstrate the feasibility of the proposed method. (paper)

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

Science.gov (United States)

Beheim, Glenn M.

2003-01-01

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

New technologies of silicon position-sensitive detectors for future tracker systems

CERN Document Server

Bassignana, Daniela; Lozano, M

In view of the new generation of high luminosity colliders, HL-LHC and ILC, a farther investigation of silicon radiation detectors design and technology is demanded, in order to satisfy the stringent requirements of the experiments at such sophisticated machines. In this thesis, innovative technologies of silicon radiation detectors for future tracking systems are proposed. Three dierent devices have been studied and designed with the help of dierent tools for computer simulations. They have been manufactured in the IMB-CNM clean room facilities in Barcelona and characterized with proper experimental set-ups in order to test the detectors capabilities and the quality and suitability of the technologies used for their fabrication. The rst technology deals with the upgrade of dedicated sensors for laser alignment systems in future tracker detectors. The design and technology of common single-sided silicon microstrip detectors have been slightly modied in order to improve IR light transmittance of the devices. T...

Characteristics of fracture during the approach process and wear mechanism of a silicon AFM tip

International Nuclear Information System (INIS)

Chung, Koo-Hyun; Lee, Yong-Ha; Kim, Dae-Eun

2005-01-01

The wear of an atomic force microscope (AFM) tip is one of the crucial issues in AFM as well as in other probe-based applications. In this work, wear tests under extremely low normal load using an AFM were conducted. Also, in order to understand the nature of silicon tip wear, the wear characteristics of crystal silicon and amorphous silicon oxide layer were investigated by a high-resolution transmission electron microscope (HRTEM). It was found that fracture of the tip readily occurred due to impact during the approach process. Experimental results showed that the impact should be below 0.1 nN s to avoid significant fracture of the tip. Also, it was observed that wear of the amorphous layer, formed at the end of the tip, occurred at the initial stage of the silicon tip damage process. Based on Archard's wear law, the wear coefficient of the amorphous layer was in the range of 0.009-0.014. As for the wear characteristics of the silicon tip, it was shown that wear occurred gradually under light normal load and the wear rate decreased with increase in the sliding distance. As for the wear mechanism of the silicon tip, oxidation wear was identified to be the most significant. It was shown that the degree of oxidation was higher under high normal load and in a nitrogen environment, oxidation of the silicon tip was reduced

Highly sensitive polymer-based cantilever-sensors for DNA detection

Energy Technology Data Exchange (ETDEWEB)

Calleja, M. [Biosensors Group, Nacional Center of Microelectronics (CNM-CSIC), Isaac Newton 8, Tres Cantos, E-28760 Madrid (Spain) and Mikroelektronics Centret, Technical University of Denmark, 345E, DK-2800, Lyngby (Denmark)]. E-mail: mcalleja@imm.cnm.csic.es; Nordstroem, M. [Mikroelektronics Centret, Technical University of Denmark, 345E, DK-2800, Lyngby (Denmark); Alvarez, M. [Biosensors Group, Nacional Center of Microelectronics (CNM-CSIC), Isaac Newton 8, Tres Cantos, E-28760 Madrid (Spain); Tamayo, J. [Biosensors Group, Nacional Center of Microelectronics (CNM-CSIC), Isaac Newton 8, Tres Cantos, E-28760 Madrid (Spain); Lechuga, L.M. [Biosensors Group, Nacional Center of Microelectronics (CNM-CSIC), Isaac Newton 8, Tres Cantos, E-28760 Madrid (Spain); Boisen, A. [Mikroelektronics Centret, Technical University of Denmark, 345E, DK-2800, Lyngby (Denmark)

2005-11-15

We present a technology for the fabrication of cantilever arrays aimed to develop an integrated biosensor microsystem. The fabrication process is based on spin coating of the photosensitive polymer and near-ultraviolet exposure. Arrays of up to 33 microcantilevers are fabricated in the novel polymer material SU-8. The low Young's modulus of the polymer, 40 times lower than that of silicon, enables to improve the sensitivity of the sensor device for target detection. The mechanical properties of SU-8 cantilevers, such as spring constant, resonant frequency and quality factor are characterized as a function of the dimensions and the medium. The devices have been tested for measurement of the adsorption of single stranded DNA and subsequent interstitial adsorption of lateral spacer molecules. We demonstrate that sensitivity is enhanced by a factor of six compared to that of commercial silicon nitride cantilevers.

Workshop on nuclear structure at moderate and high spin: Slide report

International Nuclear Information System (INIS)

1986-10-01

The workshop was scheduled to coincide with the beginning of operation of a number of large arrays of Compton-suppressed germanium detectors. The workshop was divided into 14 sessions containing 3 presentations each. The topics of these sessions were superdeformation, heavy rare earths, single-particle configurations, band termination, continuum properties, light rare-earths, new techniques, high temperatures, transfer reactions, transition region, shapes, lifetimes, and moments. This publication consists of the slides used in all of the presentations at the workshop

Note: Anodic bonding with cooling of heat-sensitive areas

DEFF Research Database (Denmark)

Vesborg, Peter Christian Kjærgaard; Olsen, Jakob Lind; Henriksen, Toke Riishøj

2010-01-01

Anodic bonding of silicon to glass always involves heating the glass and device to high temperatures so that cations become mobile in the electric field. We present a simple way of bonding thin silicon samples to borosilicate glass by means of heating from the glass side while locally cooling hea......-sensitive areas from the silicon side. Despite the high thermal conductivity of silicon, this method allows a strong anodic bond to form just millimeters away from areas essentially at room temperature....

High-precision X-ray spectroscopy of highly-charged ions at the experimental storage ring using silicon microcalorimeters

Science.gov (United States)

Scholz, Pascal A.; Andrianov, Victor; Echler, Artur; Egelhof, Peter; Kilbourne, Caroline; Kiselev, Oleg; Kraft-Bermuth, Saskia; McCammon, Dan

2017-10-01

X-ray spectroscopy on highly charged heavy ions provides a sensitive test of quantum electrodynamics in very strong Coulomb fields. One limitation of the current accuracy of such experiments is the energy resolution of available X-ray detectors for energies up to 100 keV. To improve this accuracy, a novel detector concept, namely the concept of microcalorimeters, is exploited for this kind of measurements. The microcalorimeters used in the present experiments consist of silicon thermometers, ensuring a high dynamic range, and of absorbers made of high-Z material to provide high X-ray absorption efficiency. Recently, besides an earlier used detector, a new compact detector design, housed in a new dry cryostat equipped with a pulse tube cooler, was applied at a test beamtime at the experimental storage ring (ESR) of the GSI facility in Darmstadt. A U89+ beam at 75 MeV/u and a 124Xe54+ beam at various beam energies, both interacting with an internal gas-jet target, were used in different cycles. This test was an important benchmark for designing a larger array with an improved lateral sensitivity and statistical accuracy.

Fabrication and Characterisation of Silicon Waveguides for High-Speed Optical Signal Processing

DEFF Research Database (Denmark)

Jensen, Asger Sellerup

This Ph.D. thesis treats various aspects of silicon photonics. From the limitations of silicon as a linear and nonlinear waveguide medium to its synergy with other waveguide materials. Various methods for reducing sidewall roughness and line edge roughness of silicon waveguides are attempted...... was too high for any practical applications. It is speculated that the attempt at creating a material with low density of dangling bonds was unsuccessful. Nevertheless, linear losses of 2.4dB/cm at 1550nm wavelength in the silicon waveguides remained sufficiently low that high speed nonlinear optical...

Radiation hardened high efficiency silicon space solar cell

International Nuclear Information System (INIS)

Garboushian, V.; Yoon, S.; Turner, J.

1993-01-01

A silicon solar cell with AMO 19% Beginning of Life (BOL) efficiency is reported. The cell has demonstrated equal or better radiation resistance when compared to conventional silicon space solar cells. Conventional silicon space solar cell performance is generally ∼ 14% at BOL. The Radiation Hardened High Efficiency Silicon (RHHES) cell is thinned for high specific power (watts/kilogram). The RHHES space cell provides compatibility with automatic surface mounting technology. The cells can be easily combined to provide desired power levels and voltages. The RHHES space cell is more resistant to mechanical damage due to micrometeorites. Micro-meteorites which impinge upon conventional cells can crack the cell which, in turn, may cause string failure. The RHHES, operating in the same environment, can continue to function with a similar crack. The RHHES cell allows for very efficient thermal management which is essential for space cells generating higher specific power levels. The cell eliminates the need for electrical insulation layers which would otherwise increase the thermal resistance for conventional space panels. The RHHES cell can be applied to a space concentrator panel system without abandoning any of the attributes discussed. The power handling capability of the RHHES cell is approximately five times more than conventional space concentrator solar cells

Metallurgy of high-silicon steel parts produced using Selective Laser Melting

International Nuclear Information System (INIS)

Garibaldi, Michele; Ashcroft, Ian; Simonelli, Marco; Hague, Richard

2016-01-01

The metallurgy of high-silicon steel (6.9%wt.Si) processed using Selective Laser Melting (SLM) is presented for the first time in this study. High-silicon steel has great potential as a soft magnetic alloy, but its employment has been limited due to its poor workability. The effect of SLM-processing on the metallurgy of the alloy is investigated in this work using microscopy, X-Ray Diffraction (XRD) and Electron Backscatter Diffraction (EBSD). XRD analysis suggests that the SLM high-silicon steel is a single ferritic phase (solid solution), with no sign of phase ordering. This is expected to have beneficial effects on the material properties, since ordering has been shown to make silicon steels more brittle and electrically conductive. For near-fully dense samples, columnar grains with a high aspect ratio and oriented along the build direction are found. Most importantly, a <001> fibre-texture along the build direction can be changed into a cube-texture when the qualitative shape of the melt-pool is altered (from shallow to deep) by increasing the energy input of the scanning laser. This feature could potentially open the path to the manufacture of three-dimensional grain-oriented high-silicon steels for electromechanical applications.

Amorphous silicon as high index photonic material

Science.gov (United States)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

Removing defocused objects from single focal plane scans of cytological slides

Directory of Open Access Journals (Sweden)

David Friedrich

2016-01-01

Full Text Available Background: Virtual microscopy and automated processing of cytological slides are more challenging compared to histological slides. Since cytological slides exhibit a three-dimensional surface and the required microscope objectives with high resolution have a low depth of field, these cannot capture all objects of a single field of view in focus. One solution would be to scan multiple focal planes; however, the increase in processing time and storage requirements are often prohibitive for clinical routine. Materials and Methods: In this paper, we show that it is a reasonable trade-off to scan a single focal plane and automatically reject defocused objects from the analysis. To this end, we have developed machine learning solutions for the automated identification of defocused objects. Our approach includes creating novel features, systematically optimizing their parameters, selecting adequate classifier algorithms, and identifying the correct decision boundary between focused and defocused objects. We validated our approach for computer-assisted DNA image cytometry. Results and Conclusions: We reach an overall sensitivity of 96.08% and a specificity of 99.63% for identifying defocused objects. Applied on ninety cytological slides, the developed classifiers automatically removed 2.50% of the objects acquired during scanning, which otherwise would have interfered the examination. Even if not all objects are acquired in focus, computer-assisted DNA image cytometry still identified more diagnostically or prognostically relevant objects compared to manual DNA image cytometry. At the same time, the workload for the expert is reduced dramatically.

Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

Directory of Open Access Journals (Sweden)

Miao Tan

2017-08-01

Full Text Available We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i the work function of the transparent conductive oxide layer, (ii the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si interface, (iii the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H layer, and (iv the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

Science.gov (United States)

Tan, Miao; Zhong, Sihua; Wang, Wenjie; Shen, Wenzhong

2017-08-01

We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H) solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i) the work function of the transparent conductive oxide layer, (ii) the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) interface, (iii) the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H) layer, and (iv) the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT) counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

Compton imaging with a highly-segmented, position-sensitive HPGe detector

Energy Technology Data Exchange (ETDEWEB)

Steinbach, T.; Hirsch, R.; Reiter, P.; Birkenbach, B.; Bruyneel, B.; Eberth, J.; Hess, H.; Lewandowski, L. [Universitaet zu Koeln, Institut fuer Kernphysik, Koeln (Germany); Gernhaeuser, R.; Maier, L.; Schlarb, M.; Weiler, B.; Winkel, M. [Technische Universitaet Muenchen, Physik Department, Garching (Germany)

2017-02-15

A Compton camera based on a highly-segmented high-purity germanium (HPGe) detector and a double-sided silicon-strip detector (DSSD) was developed, tested, and put into operation; the origin of γ radiation was determined successfully. The Compton camera is operated in two different modes. Coincidences from Compton-scattered γ-ray events between DSSD and HPGe detector allow for best angular resolution; while the high-efficiency mode takes advantage of the position sensitivity of the highly-segmented HPGe detector. In this mode the setup is sensitive to the whole 4π solid angle. The interaction-point positions in the 36-fold segmented large-volume HPGe detector are determined by pulse-shape analysis (PSA) of all HPGe detector signals. Imaging algorithms were developed for each mode and successfully implemented. The angular resolution sensitively depends on parameters such as geometry, selected multiplicity and interaction-point distances. Best results were obtained taking into account the crosstalk properties, the time alignment of the signals and the distance metric for the PSA for both operation modes. An angular resolution between 13.8 {sup circle} and 19.1 {sup circle}, depending on the minimal interaction-point distance for the high-efficiency mode at an energy of 1275 keV, was achieved. In the coincidence mode, an increased angular resolution of 4.6 {sup circle} was determined for the same γ-ray energy. (orig.)

Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

DEFF Research Database (Denmark)

Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

2010-01-01

A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

International Nuclear Information System (INIS)

Bashiri, Hadi; Azim Karami, Mohammad; Mohammadnejad, Shahramm

2017-01-01

By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact (IBC) silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters (doping concentration and thickness) is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si:H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density. (paper)

Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits

International Nuclear Information System (INIS)

Blynskij, V.I.; Bozhatkin, O.A.; Golub, E.S.; Lemeshevskaya, A.M.; Shvedov, S.V.

2010-01-01

We examine the results of an effect of preliminary annealing on the spectral sensitivity of photodetectors in bipolar integrated circuits, formed in silicon grown by the Czochralski method. We demonstrate the possibility of substantially improving the sensitivity of photodetectors in the infrared region of the spectrum with twostep annealing. The observed effect is explained by participation of oxidation in the gettering process, where oxidation precedes formation of a buried n + layer in the substrate. (authors)

Numerical Modelling of Tsunami Generated by Deformable Submarine Slides: Parameterisation of Slide Dynamics for Coupling to Tsunami Propagation Model

Science.gov (United States)

Smith, R. C.; Collins, G. S.; Hill, J.; Piggott, M. D.; Mouradian, S. L.

2015-12-01

Numerical modelling informs risk assessment of tsunami generated by submarine slides; however, for large-scale slides modelling can be complex and computationally challenging. Many previous numerical studies have approximated slides as rigid blocks that moved according to prescribed motion. However, wave characteristics are strongly dependent on the motion of the slide and previous work has recommended that more accurate representation of slide dynamics is needed. We have used the finite-element, adaptive-mesh CFD model Fluidity, to perform multi-material simulations of deformable submarine slide-generated waves at real world scales for a 2D scenario in the Gulf of Mexico. Our high-resolution approach represents slide dynamics with good accuracy, compared to other numerical simulations of this scenario, but precludes tracking of wave propagation over large distances. To enable efficient modelling of further propagation of the waves, we investigate an approach to extract information about the slide evolution from our multi-material simulations in order to drive a single-layer wave propagation model, also using Fluidity, which is much less computationally expensive. The extracted submarine slide geometry and position as a function of time are parameterised using simple polynomial functions. The polynomial functions are used to inform a prescribed velocity boundary condition in a single-layer simulation, mimicking the effect the submarine slide motion has on the water column. The approach is verified by successful comparison of wave generation in the single-layer model with that recorded in the multi-material, multi-layer simulations. We then extend this approach to 3D for further validation of this methodology (using the Gulf of Mexico scenario proposed by Horrillo et al., 2013) and to consider the effect of lateral spreading. This methodology is then used to simulate a series of hypothetical submarine slide events in the Arctic Ocean (based on evidence of historic

Microelectronic temperature sensor; silicon temperature sensor

International Nuclear Information System (INIS)

Beitner, M.; Kanert, W.; Reichert, H.

1982-01-01

The goal of this work was to develop a silicon temperature sensor with a sensitivity and a reliability as high and a tolerance as small as possible, for use in measurement and control. By employing the principle of spreading-resistance, using silicon doped by neutron transmutation, and trimming of the single wafer tolerances of resistance less than +- 5% can be obtained; overstress tests yielded a long-term stability better than 0.2%. Some applications show the advantageous use of this sensor. (orig.) [de

Porous silicon structures with high surface area/specific pore size

Science.gov (United States)

Northrup, M.A.; Yu, C.M.; Raley, N.F.

1999-03-16

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gases in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters. 9 figs.

Nanoshaving and Nanografting of Water Soluble Polymers on Glass and Silicon Dioxide Surfaces with Applications to DNA Localization

Science.gov (United States)

Davis, Brian; Conley, Hiram; Ochoa, Rosie; Hurd, Katie; Linford, Matthew R.; Davis, Robert C.

2008-10-01

Chemical surface patterning at the nanoscale is a critical component of chemically directed assembly of nanoscale devices or sensitive biological molecules onto surfaces. Here we present a scanning probe lithography technique that allows for patterning of aqueous polymers on glass or silicon dioxide surfaces. The surfaces were functionalized by covalently bonding a silane monolayer with a known surface charge to either a glass slide or a silicon wafer. A polymer layer less then 2 nm in thickness was electrostatically bound to the silane layer, passivating the functionalized surface. An Atomic Force Microscope (AFM) probe was used to remove a portion of the polymer layer, exposing the functional silane layer underneath. Employing this method we made chemically active submicron regions. These regions were backfilled with a fluorescent polymer and Lambda-DNA. Chemical differentiation was verified through tapping mode AFM and optical fluorescent microscopy. Lines with a pitch as small as 20nm were observed with AFM height and phase mode data.

Fabrication and Characterization of High-Sensitivity Underwater Acoustic Multimedia Communication Devices with Thick Composite PZT Films

Directory of Open Access Journals (Sweden)

Jeng-Cheng Liu

2017-01-01

Full Text Available This paper presents a high-sensitivity hydrophone fabricated with a Microelectromechanical Systems (MEMS process using epitaxial thin films grown on silicon wafers. The evaluated resonant frequency was calculated through finite-element analysis (FEA. The hydrophone was designed, fabricated, and characterized by different measurements performed in a water tank, by using a pulsed sound technique with a sensitivity of −190 dB ± 2 dB for frequencies in the range 50–500 Hz. These results indicate the high-performance miniaturized acoustic devices, which can impact a variety of technological applications.

Slide 1

Indian Academy of Sciences (India)

Game Theory · Strategic Form Games (Normal Form Games) · Example : Prisoner's Dilemma · Dominant Strategy Equilibrium · Nash Equilibrium · Nash's Theorem · Slide 17 · Slide 18 · Example 1: Mechanism Design Fair Division of a Cake · Example 2: Mechanism Design Truth Elicitation through an Indirect Mechanism.

Crystal growth for high-efficiency silicon solar cells workshop: Summary

Science.gov (United States)

Dumas, K. A.

1985-01-01

The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.

Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Carey, JE; Mazur, E

2005-05-19

With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

Synthesis of high-quality mesoporous silicon particles for enhanced lithium storage performance

Energy Technology Data Exchange (ETDEWEB)

Wang, Chundong, E-mail: apcdwang@hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Ren, Jianguo [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Chen, Hao [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Yi [School of Chemical Engineering and Pharmacy, Wuhan Institute of Technology, Wuhan, 430073 (China); Ostrikov, Kostya [School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane 4000, QLD (Australia); Manufacturing Flagship, CSIRO, P. O. Box 218, Lindfield, NSW 2070 (Australia); Zhang, Wenjun [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China)

2016-04-15

Silicon has been considered as one of the most promising anode materials for high-capacity lithium-ion batteries (LIBs) due to its ultrahigh theoretical capacity, abundance, and environmentally benign nature. Nonetheless, the severe break during the prolonged cycling results in poor electrochemical performance, which hinders its practical application. Herein, we report the synthesis of novel mesoporous silicon particles with a facile template method by using a magnesiothermic reduction for LIBs. The obtained silicon nanoparticles are highly porous with densely porous cavities (20–40 nm) on the wall, of which it presents good crystallization. Electrochemical measurements showed that the mesoporous silicon nanoparticles delivered a high reversible specific capacity of 910 mA h g{sup −1} at a high current density of 1200 mA g{sup −1} over 50 cycles. The specific capacity at such high current density is still over twofold than that of commercial graphite anode, suggesting that the nanoporous Si architectures is suitable for high-performance Si-based anodes for lithium ion batteries in terms of capacity, cycle life, and rate capacity. - Highlights: • Silica nanotubes were prepared with a facile template method. • Novel mesoporous silicon particles were obtained by magnesiothermic reduction. • High-Performance LIBs were achieved by using mesoporous Si particle Electrodes.

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2005-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2004-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

Attractors near grazing–sliding bifurcations

International Nuclear Information System (INIS)

Glendinning, P; Kowalczyk, P; Nordmark, A B

2012-01-01

In this paper we prove, for the first time, that multistability can occur in three-dimensional Fillipov type flows due to grazing–sliding bifurcations. We do this by reducing the study of the dynamics of Filippov type flows around a grazing–sliding bifurcation to the study of appropriately defined one-dimensional maps. In particular, we prove the presence of three qualitatively different types of multiple attractors born in grazing–sliding bifurcations. Namely, a period-two orbit with a sliding segment may coexist with a chaotic attractor, two stable, period-two and period-three orbits with a segment of sliding each may coexist, or a non-sliding and period-three orbit with two sliding segments may coexist

Decomposition of silicon carbide at high pressures and temperatures

Energy Technology Data Exchange (ETDEWEB)

Daviau, Kierstin; Lee, Kanani K. M.

2017-11-01

We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60 GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

Science.gov (United States)

Kapoor, V. J.; Shokrani, M.

1991-01-01

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Frictional characteristics of silicon graphite lubricated with water at high pressure and high temperature

International Nuclear Information System (INIS)

Lee, Jae Seon; Kim, Eun Hyun; Park, Jin Seok; Kim, Jong In

2001-01-01

Experimental frictional and wear characteristics of silicon graphite materials is studied in this paper. Those specimens are lubricated with high temperature and highly pressurized water to simulate the same operating condition for the journal bearing and the thrust bearing on the main coolant pump bearing in the newly developing nuclear reactor named SMART(System-integrated Modular Advanced ReacTor). Operating condition of the bearings is realized by the tribometer and the autoclave. Friction coefficient and wear loss are analyzed to choose the best silicon graphite material. Pin on plate test specimens are used and coned disk springs are used to control the applied force on the specimens. Wear loss and wear width are measured by a precision balance and a micrometer. The friction force is measured by the strain gauge which can be used under high temperature and high pressure. Three kinds of silicon graphite materials are examined and compared with each other, and each material shows similar but different results on frictional and wear characteristics

Development of aircraft brake materials. [evaluation of metal and ceramic materials in sliding tests simulation of aircraft braking

Science.gov (United States)

Ho, T. L.; Peterson, M. B.

1974-01-01

The requirements of brake materials were outlined and a survey made to select materials to meet the needs of high temperature brakes. A number of metals and ceramic materials were selected and evaluated in sliding tests which simulated aircraft braking. Nickel, molybdenum tungsten, Zr02, high temperature cements and carbons were tested. Additives were then incorporated into these materials to optimize their wear or strength behavior with particular emphasis on nickel and molybdenum base materials and a high temperature potassium silicate cement. Optimum materials were developed which improved wear behavior over conventional brake materials in the simulated test. The best materials are a nickel, aluminum oxide, lead tungstate composition containing graphite or molybdenum disulphite; a molybdenum base material containing LPA100 (an intermetallic compound of cobalt, molybdenum, and silicon); and a carbon material (P5).

Sliding seal materials for low heat rejection engines

Science.gov (United States)

Beaty, Kevin; Lankford, James; Vinyard, Shannon

1989-01-01

Sliding friction coefficients and wear rates of promising piston seal materials were measured under temperature, environmental, velocity, and loading conditions that are representative of the low heat rejection (LHR) diesel engine environment. These materials included carbides, oxides, and nitrides. In addition, silicon nitride and partially stablized zirconia disks (cylinder liners) were ion-implanted with TiNi, Ni, Co, and Cr, and subsequently run against carbide pins (piston rings), with the objective of producing reduced friction via solid lubrication at elevated temperature. Friction and wear measurements were obtained using pin-on-disk laboratory experiments and a unique engine friction test rig. Unmodified ceramic sliding couples were characterized at all temperatures by friction coefficients of 0.24 and above during the pin-on-disk tests. The coefficient at 800 C in an oxidizing environment was reduced to below 0.1, for certain material combination, by the ion-implantation of TiNi or Co. This beneficial effect was found to derive from the lubricious Ti, Ni, and Co oxides. Similar results were demonstrated on the engine friction test rig at lower temperatures. The structural integrity and feasibility of engine application with the most promising material combination were demonstrated during a 30-hour single-cylinder, direct-injection diesel engine test.

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

Highly efficient silicon light emitting diode

NARCIS (Netherlands)

Le Minh, P.; Holleman, J.; Wallinga, Hans

2002-01-01

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

Silicon carbide production by Self-Propagating High Temperature (SHS) technique

International Nuclear Information System (INIS)

Lima, Eduardo de Souza; Schneider, Pedro Luiz; Mattoso, Irani Guedes; Costa, Carlos Roberto Correia da; Louro, Luis Henrique Leme

1997-01-01

Samples of silicon carbide (SiC) were synthesized from a mixture of silicon and carbon powders, using the Self-Propagating High Temperature Synthesis (SHS) technique. Three mixtures were tried, using silicon particles of the same average size but carbon particles of different average sizes. The method tried is characterized by an ignition temperature of 1450 deg C and the short duration of the synthesis ( 2-3 min). The samples were characterized by X-ray diffraction and scattering electron microscopy. (author)

New optical scheme for differential measurements of diffraction reflection intensity on X-radiation sliding incidence

International Nuclear Information System (INIS)

Golovin, A.L.; Mas', E.T.

1989-01-01

An X-ray optical scheme for differential measurements of X-ray diffraction under sliding incidence conditions is proposed and an attachment design realizng this scheme, using standard equipment, is described. The main feature of the scheme is the following: collimation according to the Bragg angle is carried out for the reflected beam rather than the incident one. Goniometers can be used from DRON, TRS, GS-5 and other spectrometers. The goniometer head carrying the sample is standard, it is a part of the DRON, TRS and DTS. The crystal analyzer is fixed on the attachment. The angular position of the crystal monochromator is controlled by an inductive sensor. The experimental differential curves of X-ray diffraction under conditions of sliding incidence, taken for a silicon crystal having the 111 orientation, are given as well

Is the lag screw sliding effective in the intramedullary nailing in A1 and A2 AO-OTA intertrochanteric fractures? A prospective study of Sliding and None-sliding lag screw in Gamma-III nail

Directory of Open Access Journals (Sweden)

Zhu Yi

2012-09-01

Full Text Available Abstract Object To compare the Sliding with Non-sliding lag screw of a gamma nail in the treatment of A1 and A2 AO-OTA intertrochanteric fractures. Materials and methods 80 patients were prospectively collected. In each group, AO/OTA 31-A were classified into group A. AO/OTA 31-A2.1 was classified as group B. We classified the A2.2 and A2.3 as group C. According to the set-screw locking formation of Gamma-III, the cases were randomly allocated to Sliding subgroup and Non-sliding subgroup in A, B and C groups. Follow-ups were performed 1, 3, 6 and 12 months postoperatively. Results In the Sliding group, the bone healing rate 3, 6, 12 months postoperatively reached 85.00%, 97.50%, 100% in group A, B and C. Meanwhile, in Non-sliding group, postoperatively, bone healing rate were 90.00%, 95.00% and 97.50% in group A, B and C, respectively. Both differences were not significant. Lower limb discrepancy between Sliding and Non-sliding pattern was significantly different in group C which represent fracture types of AO/OTA 31-A2.2 and A2.3 (0.573 ± 0.019 mm in Non-sliding group, 0.955 mm ± 0.024 mm in Sliding group, P Conclusions As a result, we can conclude that the sliding distance is minimal in Gamma nails and it is related to the comminuted extent of the intertrochanteric area in A1 and A2 AO-OTA intertrochanteric fractures. For treating these kinds of fractures, the sliding of the lag screw of an Gamma nail does not improve any clinical results and in certain cases, such as highly comminuted A1 and A2 fractures, can therefore even benefit from a locked lag screw by tightening the set-screw.

Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

Energy Technology Data Exchange (ETDEWEB)

Dalla Betta, G.F., E-mail: dallabe@disi.unitn.it [DISI, Università di Trento, and INFN Trento, Trento (Italy); RSens srl, Modena (Italy); Tyzhnevyi, V. [DISI, Università di Trento, and INFN Trento, Trento (Italy); Bosi, A.; Bonaiuti, M. [RSens srl, Modena (Italy); Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Forti, F.; Giorgi, M.A.; Morsani, F.; Paoloni, E.; Rizzo, G.; Walsh, J. [Dipartimento di Fisica, Università di Pisa, and INFN Pisa, Pisa (Italy); Lusiani, A. [Scuola Normale Superiore and INFN Pisa, Pisa (Italy); Ciolini, R.; Curzio, G.; D' Errico, F.; Del Gratta, A. [Dipartimento di Ingegneria Meccanica, Nucleare e della Produzione, Università di Pisa, Pisa (Italy); Bidinelli, L. [En and tech, Università di Modena e Reggio Emilia, Reggio Emilia (Italy); RSens srl, Modena (Italy); and others

2013-08-01

A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the BJT internal amplification, real-time α particle detection is possible using simple readout electronics, which records the particle arrival time and charge. Functional tests at known Radon concentrations, demonstrated a sensitivity up to 4.9 cph/(100 Bq/m{sup 3}) and a count rate of 0.05 cph at nominally-zero Radon concentration.

Fluorescent porous silicon biological probes with high quantum efficiency and stability.

Science.gov (United States)

Tu, Chang-Ching; Chou, Ying-Nien; Hung, Hsiang-Chieh; Wu, Jingda; Jiang, Shaoyi; Lin, Lih Y

2014-12-01

We demonstrate porous silicon biological probes as a stable and non-toxic alternative to organic dyes or cadmium-containing quantum dots for imaging and sensing applications. The fluorescent silicon quantum dots which are embedded on the porous silicon surface are passivated with carboxyl-terminated ligands through stable Si-C covalent bonds. The porous silicon bio-probes have shown photoluminescence quantum yield around 50% under near-UV excitation, with high photochemical and thermal stability. The bio-probes can be efficiently conjugated with antibodies, which is confirmed by a standard enzyme-linked immunosorbent assay (ELISA) method.

Geomorphology, stability and mobility of the Currituck slide

Science.gov (United States)

Locat, J.; Lee, H.; ten Brink, Uri S.; Twichell, D.; Geist, E.; Sansoucy, M.

2009-01-01

Over the last 100,000??years, the U.S. Atlantic continental margin has experienced various types of mass movements some of which are believed to have taken place at times of low sea level. At one of these times of low sea level a significant trigger caused a major submarine mass movement off the coast of Virginia: the Currituck slide which is believed to have taken place between 24 and 50??ka ago. This slide removed a total volume of about 165??km3 from this section of the continental slope. The departure zone still shows a very clean surface that dips at 4?? and is only covered by a thin veneer of postglacial sediment. Multibeam bathymetric and seismic survey data suggest that this slide took place along three failures surfaces. The morphology of the source area suggests that the sediments were already at least normally consolidated at the time of failure. The slide debris covers an area as much as 55??km wide that extends 180??km from the estimated toe of the original slope. The back analysis of slide initiation indicates that very high pore pressure, a strong earthquake, or both had to be generated to trigger slides on such a low failure plane angle. The shape of the failure plane, the fact that the surface is almost clear of any debris, and the mobility analysis, all support the argument that the slides took place nearly simultaneously. Potential causes for the generation of high pore pressures could be seepage forces from coastal aquifers, delta construction and related pore pressure generation due to the local sediment loading, gas hydrates, and earthquakes. This slide, and its origin, is a spectacular example of the potential threat that submarine mass movements can pose to the US Atlantic coast and underline the need to further assess the potential for the generation of such large slides, like the Grand Banks 1927 landslide of similar volume. ?? 2008 Elsevier B.V.

Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

KAUST Repository

Cui, Li-Feng

2009-01-14

Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

Study on high-silicon boron-containing zeolite by thermogravimetric and IR-spectroscopy techniques

International Nuclear Information System (INIS)

Chukin, G.D.; Nefedov, B.K.; Surin, S.A.; Polinina, E.V.; Khusid, B.L.; Sidel'kovskaya, V.G.

1985-01-01

The structure identity of initial Na-forms of boron-containing and aluminosilicate high-silicon zeolites is established by thermogravimetric and IR-spectroscopy methods. The presence of boron in Na-forms of high-silicon zeolites is shown to lead to reduction of structure thermal stability. It is noted that thermal stability of the H-form of both high-silicon boron-containing and boron-free zeolites is practically equal and considerably higher than that of Na-forms

High-Tc superconducting antenna-coupled microbolometer on silicon

Science.gov (United States)

Rice, Joseph P.; Grossman, Erich N.; Borcherdt, L. J.; Rudman, D. A.

1994-05-01

A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Tc superconductor YBa2Cu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 X 10-6 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 microsecond(s) , a responsivity of the 1000 V/W range, and a noise-equivalent power in the 10-12 W/Hz1/2 range at 1000 Hz.

NEMD simulations for ductile metal sliding

Energy Technology Data Exchange (ETDEWEB)

Hammerberg, James E [Los Alamos National Laboratory; Germann, Timothy C [Los Alamos National Laboratory; Ravelo, Ramon J [Los Alamos National Laboratory; Holian, Brad L [Los Alamos National Laboratory

2011-01-31

We have studied the sliding behavior for a 19 M Al(110)/Al(110) defective crystal at 15 GPa as a function of relative sliding velocity. The general features are qualitatively similar to smaller scale (1.4 M) atom simulations for Al(111)/Al(110) nondefective single crystal sliding. The critical velocity, v{sub c}, is approximately the same for the defective crystal as the size scaled v{sub c}. The lower velocity tangential force is depressed relative to the perfect crystal. The critical temperature, T*, is depressed relative to the perfect crystal. These conclusions are consistent with a lower value for f{sub c} for the defective crystal. The detailed features of structural transformation and the high velocity regime remain to be mapped.

Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor

Science.gov (United States)

Lee, Ryoongbin; Kwon, Dae Woong; Kim, Sihyun; Kim, Sangwan; Mo, Hyun-Sun; Kim, Dae Hwan; Park, Byung-Gook

2017-12-01

In this study, we investigated the effects of nanowire size on the current sensitivity of silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs). The changes in on-current (I on) and resistance according to pH were measured in fabricated SiNW ISFETs of various lengths and widths. As a result, it was revealed that the sensitivity expressed as relative I on change improves as the width decreases. Through technology computer-aided design (TCAD) simulation analysis, the width dependence on the relative I on change can be explained by the observation that the target molecules located at the edge region along the channel width have a stronger effect on the sensitivity as the SiNW width is reduced. Additionally, the length dependence on the sensitivity can be understood in terms of the resistance ratio of the fixed parasitic resistance, including source/drain resistance, to the varying channel resistance as a function of channel length.

SlideJ: An ImageJ plugin for automated processing of whole slide images.

Science.gov (United States)

Della Mea, Vincenzo; Baroni, Giulia L; Pilutti, David; Di Loreto, Carla

2017-01-01

The digital slide, or Whole Slide Image, is a digital image, acquired with specific scanners, that represents a complete tissue sample or cytological specimen at microscopic level. While Whole Slide image analysis is recognized among the most interesting opportunities, the typical size of such images-up to Gpixels- can be very demanding in terms of memory requirements. Thus, while algorithms and tools for processing and analysis of single microscopic field images are available, Whole Slide images size makes the direct use of such tools prohibitive or impossible. In this work a plugin for ImageJ, named SlideJ, is proposed with the objective to seamlessly extend the application of image analysis algorithms implemented in ImageJ for single microscopic field images to a whole digital slide analysis. The plugin has been complemented by examples of macro in the ImageJ scripting language to demonstrate its use in concrete situations.

Synthetic Strategies for High Dielectric Constant Silicone Elastomers

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt

synthetic strategies were developed in this Ph.D. thesis, in order to create silicone elastomers with high dielectric constants and thereby higher energy densities. The work focused on maintaining important properties such as dielectric loss, electrical breakdown strength and elastic modulus....... The methodology therefore involved chemically grafting high dielectric constant chemical groups onto the elastomer network, as this would potentially provide a stable elastomer system upon continued activation of the material. The first synthetic strategy involved the synthesis of a new type of cross...... extender’ that allowed for chemical modifications such as Cu- AAC. This route was promising for one-pot elastomer preparation and as a high dielectric constant additive to commercial silicone systems. The second approach used the borane-catalysed Piers-Rubinsztajn reaction to form spatially well...

Undepleted silicon detectors

International Nuclear Information System (INIS)

Rancoita, P.G.; Seidman, A.

1985-01-01

Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

High-Order Sliding Mode-Based Synchronous Control of a Novel Stair-Climbing Wheelchair Robot

OpenAIRE

Liu, Juanxiu; Wu, Yifei; Guo, Jian; Chen, Qingwei

2015-01-01

For the attitude control of a novel stair-climbing wheelchair with inertial uncertainties and external disturbance torques, a new synchronous control method is proposed via combing high-order sliding mode control techniques with cross-coupling techniques. For this purpose, a proper controller is designed, which can improve the performance of the system under conditions of uncertainties and torque perturbations and also can guarantee the synchronization of the system. Firstly, a robust high-or...

Effective lecture slides

International Nuclear Information System (INIS)

Lim, Jae Hoon

1986-01-01

Lawyers, with their constant opportunity for practice, show a talent for public oratory that few doctors can equal. However, the physician, despite his more modest and hesitant delivery, has one great advantage over the most experienced lawyer. He is allowed to use slides. Slides of good quality conceal defects in oratory and they make for a confident speaker and a contented audience. By contrast, smudged, complicated or ill prepared slides may draw attention to minor defects in delivery and make the audience inattentive.

Interfacial bonding and friction in silicon carbide (filament)-reinforced ceramic- and glass-matrix composites

International Nuclear Information System (INIS)

Bright, J.D.; Shetty, D.K.

1989-01-01

This paper reports interfacial shear strength and interfacial sliding friction stress assessed in unidirectional SiC-filament-reinforced reaction-bonded silicon nitride (RBSN) and borosilicate glass composites and 0/90 cross-ply reinforced borosilicate glass composite using a fiber pushout test technique. The interface debonding load and the maximum sliding friction load were measured for varying lengths of the embedded fibers by continuously monitoring the load during debonding and pushout of single fibers in finite-thickness specimens. The dependences of the debonding load and the maximum sliding friction load on the initial embedded lengths of the fibers were in agreement with nonlinear shear-lag models. An iterative regression procedure was used to evaluate the interfacial properties, shear debond strength (τ d ), and sliding friction stress (τ f ), from the embedded fiber length dependences of the debonding load and the maximum frictional sliding load, respectively. The shear-lag model and the analysis of sliding friction permit explicit evaluation of a coefficient of sliding friction (μ) and a residual compressive stress on the interface (σ 0 ). The cross-ply composite showed a significantly higher coefficient of interfacial friction as compared to the unidirectional composites

Hydrophilic functionalized silicon nanoparticles produced by high energy ball milling

Science.gov (United States)

Hallmann, Steffen

The mechanochemical synthesis of functionalized silicon nanoparticles using High Energy Ball Milling (HEBM) is described. This method facilitates the fragmentation of mono crystalline silicon into the nanometer regime and the simultaneous surface functionalization of the formed particles. The surface functionalization is induced by the reaction of an organic liquid, such as alkynes and alkenes with reactive silicon sites. This method can be applied to form water soluble silicon nanoparticles by lipid mediated micelle formation and the milling in organic liquids containing molecules with bi-functional groups, such as allyl alcohol. Furthermore, nanometer sized, chloroalkyl functionalized particles can be synthesized by milling the silicon precursor in the presence of an o-chloroalkyne with either alkenes or alkynes as coreactants. This process allows tuning of the concentration of the exposed, alkyl linked chloro groups, simply by varying the relative amounts of the coreactant. The silicon nanoparticles that are formed serve as the starting point for a wide variety of chemical reactions, which may be used to alter the surface properties of the functionalized nanoparticles. Finally, the use of functionalized silicon particles for the production of superhydrophobic films is described. Here HEBM proves to be an efficient method to produce functionalized silicon particles, which can be deposited to form a stable coating exhibiting superhydrophobic properties. The hydrophobicity of the silicon film can be tuned by the milling time and thus the resulting surface roughness of the films.

SlideJ: An ImageJ plugin for automated processing of whole slide images.

Directory of Open Access Journals (Sweden)

Vincenzo Della Mea

Full Text Available The digital slide, or Whole Slide Image, is a digital image, acquired with specific scanners, that represents a complete tissue sample or cytological specimen at microscopic level. While Whole Slide image analysis is recognized among the most interesting opportunities, the typical size of such images-up to Gpixels- can be very demanding in terms of memory requirements. Thus, while algorithms and tools for processing and analysis of single microscopic field images are available, Whole Slide images size makes the direct use of such tools prohibitive or impossible. In this work a plugin for ImageJ, named SlideJ, is proposed with the objective to seamlessly extend the application of image analysis algorithms implemented in ImageJ for single microscopic field images to a whole digital slide analysis. The plugin has been complemented by examples of macro in the ImageJ scripting language to demonstrate its use in concrete situations.

Sliding right into disaster : left-to-right sliding windows leak

NARCIS (Netherlands)

Bernstein, D.J.; Breitner, J.; Genkin, D.; Groot Bruinderink, L.; Heninger, N.; Lange, T.; van Vredendaal, C.; Yarom, Y.; Fischer, W.; Homma, N.

2017-01-01

It is well known that constant-time implementations of modular exponentiation cannot use sliding windows. However, software libraries such as Libgcrypt, used by GnuPG, continue to use sliding windows. It is widely believed that, even if the complete pattern of squarings and multiplications is

Highly Sensitive and Very Stretchable Strain Sensor Based on a Rubbery Semiconductor.

Science.gov (United States)

Kim, Hae-Jin; Thukral, Anish; Yu, Cunjiang

2018-02-07

There is a growing interest in developing stretchable strain sensors to quantify the large mechanical deformation and strain associated with the activities for a wide range of species, such as humans, machines, and robots. Here, we report a novel stretchable strain sensor entirely in a rubber format by using a solution-processed rubbery semiconductor as the sensing material to achieve high sensitivity, large mechanical strain tolerance, and hysteresis-less and highly linear responses. Specifically, the rubbery semiconductor exploits π-π stacked poly(3-hexylthiophene-2,5-diyl) nanofibrils (P3HT-NFs) percolated in silicone elastomer of poly(dimethylsiloxane) to yield semiconducting nanocomposite with a large mechanical stretchability, although P3HT is a well-known nonstretchable semiconductor. The fabricated strain sensors exhibit reliable and reversible sensing capability, high gauge factor (gauge factor = 32), high linearity (R 2 > 0.996), and low hysteresis (degree of hysteresis wearable smart gloves. Systematic investigations in the materials design and synthesis, sensor fabrication and characterization, and mechanical analysis reveal the key fundamental and application aspects of the highly sensitive and very stretchable strain sensors entirely from rubbers.

Selected Landscape Plants. Slide Script.

Science.gov (United States)

McCann, Kevin

This slide script, part of a series of slide scripts designed for use in vocational agriculture classes, deals with commercially important woody ornamental landscape plants. Included in the script are narrations for use with a total of 253 slides illustrating 92 different plants. Several slides are used to illustrate each plant: besides a view of…

Highly sensitive strain sensors based on fragmentized carbon nanotube/polydimethylsiloxane composites.

Science.gov (United States)

Gao, Yang; Fang, Xiaoliang; Tan, Jianping; Lu, Ting; Pan, Likun; Xuan, Fuzhen

2018-06-08

Wearable strain sensors based on nanomaterial/elastomer composites have potential applications in flexible electronic skin, human motion detection, human-machine interfaces, etc. In this research, a type of high performance strain sensors has been developed using fragmentized carbon nanotube/polydimethylsiloxane (CNT/PDMS) composites. The CNT/PDMS composites were ground into fragments, and a liquid-induced densification method was used to fabricate the strain sensors. The strain sensors showed high sensitivity with gauge factors (GFs) larger than 200 and a broad strain detection range up to 80%, much higher than those strain sensors based on unfragmentized CNT/PDMS composites (GF sensors is ascribed to the sliding of individual fragmentized-CNT/PDMS-composite particles during mechanical deformation, which causes significant resistance change in the strain sensors. The strain sensors can differentiate mechanical stimuli and monitor various human body motions, such as bending of the fingers, human breathing, and blood pulsing.

A Novel High-Sensitivity, Low-Power, Liquid Crystal Temperature Sensor

Directory of Open Access Journals (Sweden)

José Francisco Algorri

2014-04-01

Full Text Available A novel temperature sensor based on nematic liquid crystal permittivity as a sensing magnitude, is presented. This sensor consists of a specific micrometric structure that gives considerable advantages from other previous related liquid crystal (LC sensors. The analytical study reveals that permittivity change with temperature is introduced in a hyperbolic cosine function, increasing the sensitivity term considerably. The experimental data has been obtained for ranges from −6 °C to 100 °C. Despite this, following the LC datasheet, theoretical ranges from −40 °C to 109 °C could be achieved. These results have revealed maximum sensitivities of 33 mVrms/°C for certain temperature ranges; three times more than of most silicon temperature sensors. As it was predicted by the analytical study, the micrometric size of the proposed structure produces a high output voltage. Moreover the voltage’s sensitivity to temperature response can be controlled by the applied voltage. This response allows temperature measurements to be carried out without any amplification or conditioning circuitry, with very low power consumption.

Simple processing of high efficiency silicon solar cells

International Nuclear Information System (INIS)

Hamammu, I.M.; Ibrahim, K.

2006-01-01

Cost effective photovoltaic devices have been an area research since the development of the first solar cells, as cost is the major factor in their usage. Silicon solar cells have the biggest share in the photovoltaic market, though silicon os not the optimal material for solar cells. This work introduces a simplified approach for high efficiency silicon solar cell processing, by minimizing the processing steps and thereby reducing cost. The suggested procedure might also allow for the usage of lower quality materials compared to the one used today. The main features of the present work fall into: simplifying the diffusion process, edge shunt isolation and using acidic texturing instead of the standard alkaline processing. Solar cells of 17% efficiency have been produced using this procedure. Investigations on the possibility of improving the efficiency and using less quality material are still underway

3D finite element modeling of sliding wear

Science.gov (United States)

Buentello Hernandez, Rodolfo G.

Wear is defined as "the removal of material volume through some mechanical process between two surfaces". There are many mechanical situations that can induce wear and each can involve many wear mechanisms. This research focuses on the mechanical wear due to dry sliding between two surfaces. Currently there is a need to identify and compare materials that would endure sliding wear under severe conditions such as high velocities. The high costs associated with the field experimentation of systems subject to high-speed sliding, has prevented the collection of the necessary data required to fully characterize this phenomena. Simulating wear through Finite Elements (FE) would enable its prediction under different scenarios and would reduce experimentation costs. In the aerospace, automotive and weapon industries such a model can aid in material selection, design and/or testing of systems subjected to wear in bearings, gears, brakes, gun barrels, slippers, locomotive wheels, or even rocket test tracks. The 3D wear model presented in this dissertation allows one to reasonably predict high-speed sliding mechanical wear between two materials. The model predictions are reasonable, when compared against those measured on a sled slipper traveling over the Holloman High Speed Tests Track. This slipper traveled a distance of 5,816 meters in 8.14 seconds and reached a maximum velocity of 1,530 m/s.

TEM investigation of aluminium containing precipitates in high aluminium doped silicon carbide

International Nuclear Information System (INIS)

Wong-Leung, J.; FitzGerald, J.D.

2002-01-01

Full text: Silicon carbide is a promising semiconductor material for applications in high temperature and high power devices. The successful growth of good quality epilayers in this material has enhanced its potential for device applications. As a novel semiconductor material, there is a need for studying its basic physical properties and the role of dopants in this material. In this study, silicon carbide epilayers were grown on 4H-SiC wafers of (0001) orientation with a miscut angle of 8 deg at a temperature of 1550 deg C. The epilayers contained regions of high aluminium doping well above the solubility of aluminium in silicon carbide. High temperature annealing of this material resulted in the precipitation of aluminium in the wafers. The samples were analysed by secondary ion mass spectrometry and transmission electron microscopy. Selected area diffraction studies show the presence of aluminium carbide and aluminium silicon carbide phases. Copyright (2002) Australian Society for Electron Microscopy Inc

High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates

Science.gov (United States)

Gu, Xiaodan; Liu, Zuwei; Gunkel, Ilja; Olynick, Deirdre; Russell, Thomas; University of Massachusetts Amherst Collaboration; Oxford Instrument Collaboration; Lawrence Berkeley National Lab Collaboration

2013-03-01

High-aspect-ratio sub-15 nm silicon trenches are fabricated directly from plasma etching of a block copolymer (BCP) mask. Polystyrene-b-poly(2-vinyl pyridine) (PS-b-P2VP) 40k-b-18k was spin coated and solvent annealed to form cylindrical structures parallel to the silicon substrate. The BCP thin film was reconstructed by immersion in ethanol and then subjected to an oxygen and argon reactive ion etching to fabricate the polymer mask. A low temperature ion coupled plasma with sulfur hexafluoride and oxygen was used to pattern transfer block copolymer structure to silicon with high selectivity (8:1) and fidelity. The silicon pattern was characterized by scanning electron microscopy and grazing incidence x-ray scattering. We also demonstrated fabrication of silicon nano-holes using polystyrene-b-polyethylene oxide (PS-b-PEO) using same methodology described above for PS-b-P2VP. Finally, we show such silicon nano-strucutre serves as excellent nano-imprint master template to pattern various functional materials like poly 3-hexylthiophene (P3HT).

Impurity effects in silicon for high efficiency solar cells

Science.gov (United States)

Hopkins, R. H.; Rohatgi, A.

1986-01-01

Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

Energy Technology Data Exchange (ETDEWEB)

Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

2014-10-27

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

International Nuclear Information System (INIS)

Martini, R.; Kepa, J.; Stesmans, A.; Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I.; Poortmans, J.

2014-01-01

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

Mapping stain distribution in pathology slides using whole slide imaging

Directory of Open Access Journals (Sweden)

Fang-Cheng Yeh

2014-01-01

Full Text Available Background: Whole slide imaging (WSI offers a novel approach to digitize and review pathology slides, but the voluminous data generated by this technology demand new computational methods for image analysis. Materials and Methods: In this study, we report a method that recognizes stains in WSI data and uses kernel density estimator to calculate the stain density across the digitized pathology slides. The validation study was conducted using a rat model of acute cardiac allograft rejection and another rat model of heart ischemia/reperfusion injury. Immunohistochemistry (IHC was conducted to label ED1 + macrophages in the tissue sections and the stained slides were digitized by a whole slide scanner. The whole slide images were tessellated to enable parallel processing. Pixel-wise stain classification was conducted to classify the IHC stains from those of the background and the density distribution of the identified IHC stains was then calculated by the kernel density estimator. Results: The regression analysis showed a correlation coefficient of 0.8961 between the number of IHC stains counted by our stain recognition algorithm and that by the manual counting, suggesting that our stain recognition algorithm was in good agreement with the manual counting. The density distribution of the IHC stains showed a consistent pattern with those of the cellular magnetic resonance (MR images that detected macrophages labeled by ultrasmall superparamagnetic iron-oxide or micron-sized iron-oxide particles. Conclusions: Our method provides a new imaging modality to facilitate clinical diagnosis. It also provides a way to validate/correlate cellular MRI data used for tracking immune-cell infiltration in cardiac transplant rejection and cardiac ischemic injury.

Dynamic Sliding Mode Evolution PWM Controller for a Novel High-Gain Interleaved DC-DC Converter in PV System

Directory of Open Access Journals (Sweden)

Taizhou Bei

2014-01-01

Full Text Available Considering the disadvantages of the traditional high-gain DC-DC converter such as big size, high voltage stress of switches, and large input current ripple, a novel high-gain interleaved boost converter with coupled-inductor and switched-capacitor was proposed correspondingly and the operation principle together with the steady-state analysis of this converter was also described. Besides, a new control approach-dynamic sliding mode evolution PWM controller (DSME PWM for the novel topological converter based on both dynamic evolution and sliding mode control was also presented. From the simulation results and experimental validation the proposed converter can fulfill high-gain boost, low ripple of both the input current and the output voltage. Furthermore, MPPT technique can be also achieved in a short time by simulation. The efficiency and stability of the converter proposed in this paper can be improved.

A friction test between steel and a brittle material at high contact pressures and high sliding velocities

Directory of Open Access Journals (Sweden)

Picart D.

2012-08-01

Full Text Available Our aim is to characterize the interface behaviour between an aggregate material and steel. This work focuses on contact pressures and sliding velocities reaching 100 MPa and 10 m/s. The set-up consists in a cylindrical sample of the aggregate material which slips into a steel tube. The tube is both a confinement vessel and a sliding surface. Thanks to confinement, the material can be tested under high stresses without failure. The interface pressure is generated by an axial compression. The sample is pressed on a spring, so it can be simultaneously compressed and rubbed on the tube. The set-up has been tested in the case of a quasi-static loading and the 100 MPa pressure has been reached. Then the set-up was mounted on a Split Hopkinson Pressure Bar device in order to reach higher velocities. Numerical simulations have been realized to check the feasibility and the relevance of this dynamic test. These results are analysed and compared to the experimental ones.

3D DEM analyses of the 1963 Vajont rock slide

Science.gov (United States)

Boon, Chia Weng; Houlsby, Guy; Utili, Stefano

2013-04-01

The 1963 Vajont rock slide has been modelled using the distinct element method (DEM). The open-source DEM code, YADE (Kozicki & Donzé, 2008), was used together with the contact detection algorithm proposed by Boon et al. (2012). The critical sliding friction angle at the slide surface was sought using a strength reduction approach. A shear-softening contact model was used to model the shear resistance of the clayey layer at the slide surface. The results suggest that the critical sliding friction angle can be conservative if stability analyses are calculated based on the peak friction angles. The water table was assumed to be horizontal and the pore pressure at the clay layer was assumed to be hydrostatic. The influence of reservoir filling was marginal, increasing the sliding friction angle by only 1.6˚. The results of the DEM calculations were found to be sensitive to the orientations of the bedding planes and cross-joints. Finally, the failure mechanism was investigated and arching was found to be present at the bend of the chair-shaped slope. References Boon C.W., Houlsby G.T., Utili S. (2012). A new algorithm for contact detection between convex polygonal and polyhedral particles in the discrete element method. Computers and Geotechnics, vol 44, 73-82, doi.org/10.1016/j.compgeo.2012.03.012. Kozicki, J., & Donzé, F. V. (2008). A new open-source software developed for numerical simulations using discrete modeling methods. Computer Methods in Applied Mechanics and Engineering, 197(49-50), 4429-4443.

Investigation of slide-away discharges in the HT-7 tokamak

International Nuclear Information System (INIS)

Lu Hongwei; Hu Liqun; Lin Shiyao; Zhong Guoqian; Zhou Ruijie

2010-01-01

In tokamak plasmas, the discharge will go into 'runaway' discharges if the density decays to the critical ones. The discharge will go into 'slide-away' discharges if the density reaches a lower level. The slide-away discharge is characterized by high confinement and lots of superthermal electrons which constitute a large part of plasma current. In HT-7 Tokamak, the slide-away discharges have been achieved by decreasing the plasma density. The relation ship between plasma current and the critical density of slide-away discharge was investigated. It was also found that the increase of density in slide-away discharge can make the confinement poor. And also, lots of superthermal electrons lost from the vacuum chamber. (authors)

Sliding vane geometry turbines

Science.gov (United States)

Sun, Harold Huimin; Zhang, Jizhong; Hu, Liangjun; Hanna, Dave R

2014-12-30

Various systems and methods are described for a variable geometry turbine. In one example, a turbine nozzle comprises a central axis and a nozzle vane. The nozzle vane includes a stationary vane and a sliding vane. The sliding vane is positioned to slide in a direction substantially tangent to an inner circumference of the turbine nozzle and in contact with the stationary vane.

CALICE silicon-tungsten electromagnetic calorimeter

Indian Academy of Sciences (India)

A highly granular electromagnetic calorimeter prototype based on tungsten absorber and sampling units equipped with silicon pads as sensitive devices for signal collection is under construction. The full prototype will have in total 30 layers and be read out by about 10000 Si cells of 1 × 1 cm2. A first module consisting of 14 ...

Ultra-high-speed wavelength conversion in a silicon photonic chip

DEFF Research Database (Denmark)

Hu, Hao; Ji, Hua; Galili, Michael

2011-01-01

We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...

High-{Tc} superconducting antenna-coupled microbolometer on silicon

Energy Technology Data Exchange (ETDEWEB)

Rice, J.P.; Grossman, E.N.; Borcherdt, L.J.; Rudman, D.A. [National Inst. of Standards and Technology, Boulder, CO (United States). Cryoelectronic Metrology Group

1994-12-31

A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-{Tc} superconductor YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 {times} 10{sup {minus}6} W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 {micro}s, a responsivity in the 1,000 V/W range, and a noise-equivalent power (NEP) in the 10{sup {minus}12} W/Hz{sup 1/2} range at 1,000 Hz.

Influence of elastomeric seal plate surface chemistry on interface integrity in biofouling-prone systems: Evaluation of a hydrophobic "easy-release" silicone-epoxy coating for maintaining water seal integrity of a sliding neoprene/steel interface

Science.gov (United States)

Andolina, Vincent L.

The scientific hypothesis of this work is that modulation of the properties of hard materials to exhibit abrasion-reducing and low-energy surfaces will extend the functional lifetimes of elastomeric seals pressed against them in abrasive underwater systems. The initial motivation of this work was to correct a problem noted in the leaking of seals at major hydropower generating facilities subject to fouling by abrasive zebra mussel shells and extensive corrosion. Similar biofouling-influenced problems can develop at seals in medical devices and appliances from regulators in anesthetic machines and SCUBA diving oxygen supply units to autoclave door seals, injection syringe gaskets, medical pumps, drug delivery components, and feeding devices, as well as in food handling equipment like pasteurizers and transfer lines. Maritime and many other heavy industrial seal interfaces could also benefit from this coating system. Little prior work has been done to elucidate the relationship of seal plate surface properties to the friction and wear of elastomeric seals during sliding contacts of these articulating materials, or to examine the secondary influence of mineralized debris within the contacting interfaces. This investigation utilized the seal materials relevant to the hydropower application---neoprene elastomer against carbon steel---with and without the application of a silicone-epoxy coating (WearlonRTM 2020.98) selected for its wear-resistance, hydrophobicity, and "easy-release" capabilities against biological fouling debris present in actual field use. Analytical techniques applied to these materials before and after wear-producing processes included comprehensive Contact Angle measurements for Critical Surface Tension (CA-CST) determination, Scanning Electron Microscopic inspections, together with Energy Dispersive X-ray Spectroscopy (SEM-EDS) and X-Ray Fluorescence (XRF) measurements for determination of surface texture and inorganic composition, Multiple

Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

International Nuclear Information System (INIS)

Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

2011-01-01

Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

Sliding-Mode Control of PEM Fuel Cells

CERN Document Server

Kunusch, Cristian; Mayosky, Miguel

2012-01-01

Recent advances in catalysis technologies and new materials make fuel cells an economically appealing and clean energy source with massive market potential in portable devices, home power generation and the automotive industry. Among the more promising fuel-cell technologies are proton exchange membrane fuel cells (PEMFCs). Sliding-Mode Control of PEM Fuel Cells demonstrates the application of higher-order sliding-mode control to PEMFC dynamics. Fuel-cell dynamics are often highly nonlinear and the text shows the advantages of sliding modes in terms of robustness to external disturbance, modelling error and system-parametric disturbance using higher-order control to reduce chattering. Divided into two parts, the book first introduces the theory of fuel cells and sliding-mode control. It begins by contextualising PEMFCs both in terms of their development and within the hydrogen economy and today’s energy production situation as a whole. The reader is then guided through a discussion of fuel-cell operation pr...

Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

DEFF Research Database (Denmark)

Soppe, W.; Haug, F.-J.; Couty, P.

2011-01-01

Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

Silicon Photomultiplier Performance in High ELectric Field

Science.gov (United States)

Montoya, J.; Morad, J.

2016-12-01

Roughly 27% of the universe is thought to be composed of dark matter. The Large Underground Xenon (LUX) relies on the emission of light from xenon atoms after a collision with a dark matter particle. After a particle interaction in the detector, two things can happen: the xenon will emit light and charge. The charge (electrons), in the liquid xenon needs to be pulled into the gas section so that it can interact with gas and emit light. This allows LUX to convert a single electron into many photons. This is done by applying a high voltage across the liquid and gas regions, effectively ripping electrons out of the liquid xenon and into the gas. The current device used to detect photons is the photomultiplier tube (PMT). These devices are large and costly. In recent years, a new technology that is capable of detecting single photons has emerged, the silicon photomultiplier (SiPM). These devices are cheaper and smaller than PMTs. Their performance in a high electric fields, such as those found in LUX, are unknown. It is possible that a large electric field could introduce noise on the SiPM signal, drowning the single photon detection capability. My hypothesis is that SiPMs will not observe a significant increase is noise at an electric field of roughly 10kV/cm (an electric field within the range used in detectors like LUX). I plan to test this hypothesis by first rotating the SiPMs with no applied electric field between two metal plates roughly 2 cm apart, providing a control data set. Then using the same angles test the dark counts with the constant electric field applied. Possibly the most important aspect of LUX, is the photon detector because it's what detects the signals. Dark matter is detected in the experiment by looking at the ratio of photons to electrons emitted for a given interaction in the detector. Interactions with a low electron to photon ratio are more like to be dark matter events than those with a high electron to photon ratio. The ability to

Sunlight-thin nanophotonic monocrystalline silicon solar cells

Science.gov (United States)

Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

2017-09-01

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

Silicon Valley: Planet Startup : Disruptive Innovation, Passionate Entrepreneurship & High-tech Startups

NARCIS (Netherlands)

dr. A. Maas; Dr. P. Ester

2016-01-01

For decades now, Silicon Valley has been the home of the future. It's the birthplace of the world's most successful high-tech companies-including Apple, Yahoo, Google, Facebook, Twitter, and many more. So what's the secret? What is it about Silicon Valley that fosters entrepreneurship and

Tattoo-Like Strain Gauges Based on Silicon Nano-Membranes

Science.gov (United States)

Lu, Nanshu

2012-02-01

This talk reports the in vivo measurement of tissue deformation through adhesive-free, conformable lamination of a tattoo-like elastic strain gauge consisted of piezoresistive silicon nano-membranes strategically integrated with tissue-like elastomeric substrates. The mechanical deformation in soft tissues cannot yet be directly quantified due to the lack of enabling tools. While stiff strain gauges for structural health monitoring have long existed, biological tissues are soft, curvilinear and highly deformable in contrast to civil or aerospace structures. An ultra-thin, ultra-soft, tattoo-like strain gauge that can conform to the convoluted surface of human body and stay attached during locomotion will be able to directly quantify tissue deformation without affecting the mechanical behavior of the tissue. While single crystalline silicon is known to have the highest gauge factor and best elastic response, it is intrinsically stiff and brittle. To achieve strain gauges with high compliance, high stretchability and reasonable sensitivity, single crystalline silicon nano-membranes will be transfer-printed onto polymeric support through carefully engineered stamps. The thickness and length of the Si strip will be chosen according to theoretical and numerical mechanics analysis which takes into account for the tradeoff between stretchability and sensitivity.

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

Energy Technology Data Exchange (ETDEWEB)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

2017-03-15

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Silicon Nano fabrication by Atomic Force Microscopy-Based Mechanical Processing

International Nuclear Information System (INIS)

Miyake, Sh.; Wang, M.; Kim, J.

2014-01-01

This paper reviews silicon nano fabrication processes using atomic force microscopy (AFM). In particular, it summarizes recent results obtained in our research group regarding AFM-based silicon nano fabrication through mechanochemical local oxidation by diamond tip sliding, as well as mechanical, electrical, and electromechanical processing using an electrically conductive diamond tip. Microscopic three-dimensional manufacturing mainly relies on etching, deposition, and lithography. Therefore, a special emphasis was placed on nano mechanical processes, mechanochemical reaction by potassium hydroxide solution etching, and mechanical and electrical approaches. Several important surface characterization techniques consisting of scanning tunneling microscopy and related techniques, such as scanning probe microscopy and AFM, were also discussed.

High Surface Area of Porous Silicon Drives Desorption of Intact Molecules

Science.gov (United States)

Northen, Trent R.; Woo, Hin-Koon; Northen, Michael T.; Nordström, Anders; Uritboonthail, Winnie; Turner, Kimberly L.; Siuzdak, Gary

2007-01-01

The surface structure of porous silicon used in desorption/ionization on porous silicon (DIOS) mass analysis is known to play a primary role in the desorption/ionization (D/I) process. In this study, mass spectrometry and scanning electron microscopy (SEM) are used to examine the correlation between intact ion generation with surface ablation, and surface morphology. The DIOS process is found to be highly laser energy dependent and correlates directly with the appearance of surface ions (Sin+ and OSiH+). A threshold laser energy for DIOS is observed (10 mJ/cm2), which supports that DIOS is driven by surface restructuring and is not a strictly thermal process. In addition, three DIOS regimes are observed which correspond to surface restructuring and melting. These results suggest that higher surface area silicon substrates may enhance DIOS performance. A recent example which fits into this mechanism is silicon nanowires surface which have a high surface energy and concomitantly requires lower laser energy for analyte desorpton. PMID:17881245

A III-V nanowire channel on silicon for high-performance vertical transistors.

Science.gov (United States)

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Robust Estimation for a CSTR Using a High Order Sliding Mode Observer and an Observer-Based Estimator

Directory of Open Access Journals (Sweden)

Esteban Jiménez-Rodríguez

2016-12-01

Full Text Available This paper presents an estimation structure for a continuous stirred-tank reactor, which is comprised of a sliding mode observer-based estimator coupled with a high-order sliding-mode observer. The whole scheme allows the robust estimation of the state and some parameters, specifically the concentration of the reactive mass, the heat of reaction and the global coefficient of heat transfer, by measuring the temperature inside the reactor and the temperature inside the jacket. In order to verify the results, the convergence proof of the proposed structure is done, and numerical simulations are presented with noiseless and noisy measurements, suggesting the applicability of the posed approach.

Nonsingular Terminal Sliding Mode Control of Uncertain Second-Order Nonlinear Systems

Directory of Open Access Journals (Sweden)

Minh-Duc Tran

2015-01-01

Full Text Available This paper presents a high-performance nonsingular terminal sliding mode control method for uncertain second-order nonlinear systems. First, a nonsingular terminal sliding mode surface is introduced to eliminate the singularity problem that exists in conventional terminal sliding mode control. By using this method, the system not only can guarantee that the tracking errors reach the reference value in a finite time with high-precision tracking performance but also can overcome the complex-value and the restrictions of the exponent (the exponent should be fractional number with an odd numerator and an odd denominator in traditional terminal sliding mode. Then, in order to eliminate the chattering phenomenon, a super-twisting higher-order nonsingular terminal sliding mode control method is proposed. The stability of the closed-loop system is established using the Lyapunov theory. Finally, simulation results are presented to illustrate the effectiveness of the proposed method.

Sintered silicon carbides for sliding applications in pumps; Pumpenbauteile aus SSiC

Energy Technology Data Exchange (ETDEWEB)

Fundus, M. [Wacker Engineer Ceramics, Inc., Adrian, MI (United States)

2000-07-01

The focus of the paper is on enhancement and optimization of the tribological properties of SSiC materials based on field experience obtained with the materials EKasic {sup trademark} D, TRIBO 2000, and TRIBO 2000-1. Current product development activities discussed in this paper concentrate on slide bearings and seal rings. (orig./cB) [German] Mit EKasic {sup trademark} D, TRIBO 2000 und TRIBO 2000-1 stehen drei SiC-Werkstoffe zur Verfuegung, die in der Lage sind die ganze Bandbreite der Anwendungen abzudecken. Durch eine konsequente Fortsetzung der tribologischen Optimierung der SiC-Werkstoffe koennen auch die in den naechsten Jahren weiter steigenden Anforderungen im Lager- und Dichtungsbereich erfuellt werden (Gleitringdichtungen, Gleitlager). (orig./MM)

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Science.gov (United States)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Mailing microscope slides

Science.gov (United States)

Many insects feed agriculturally important crops, trees, and ornamental plants and cause millions of dollars of damage annually. Identification for some of these require the preparation of a microscope slide for examination. There are times when a microscope slide may need to be sent away to a speci...

Multiplexed Simultaneous High Sensitivity Sensors with High-Order Mode Based on the Integration of Photonic Crystal 1 × 3 Beam Splitter and Three Different Single-Slot PCNCs.

Science.gov (United States)

Zhou, Jian; Huang, Lijun; Fu, Zhongyuan; Sun, Fujun; Tian, Huiping

2016-07-07

We simulated an efficient method for the sensor array of high-sensitivity single-slot photonic crystal nanobeam cavities (PCNCs) on a silicon platform. With the combination of a well-designed photonic crystal waveguide (PhCW) filter and an elaborate single-slot PCNC, a specific high-order resonant mode was filtered for sensing. A 1 × 3 beam splitter carefully established was implemented to split channels and integrate three sensors to realize microarrays. By applying the three-dimensional finite-difference-time-domain (3D-FDTD) method, the sensitivities calculated were S₁ = 492 nm/RIU, S₂ = 244 nm/RIU, and S₃ = 552 nm/RIU, respectively. To the best of our knowledge, this is the first multiplexing design in which each sensor cite features such a high sensitivity simultaneously.

Influence of load and sliding velocity on wear resistance of solid-lubricant composites of ultra-high molecular weight polyethylene

Science.gov (United States)

Panin, S. V.; Kornienko, L. A.; Buslovich, D. G.; Alexenko, V. O.; Ivanova, L. R.

2017-12-01

To determine the limits of the operation loading intervals appropriate for the use of solid lubricant UHMWPE composites in tribounits for mechanical engineering and medicine, the tribotechnical properties of UHMWPE blends with the optimum solid lubricant filler content (polytetrafluoroethylene, calcium stearate, molybdenum disulfide, colloidal graphite, boron nitride) are studied under dry sliding friction at different velocities (V = 0.3 and 0.5 m/s) and loads (P = 60 and 140 N). It is shown that the wear resistance of solid lubricant UHMWPE composites at moderate sliding velocities (V = 0.3 m/s) and loads (P = 60 N) increases 2-3 times in comparison with pure UHMWPE, while at high load P = 140 N wear resistance of both neat UHMWPE and its composites is reduced almost twice. At high sliding velocities and loads (up to P = 140 N), multiple increasing of the wear of pure UHMWPE and its composites takes place (by the factor of 5 to 10). The operational conditions of UHMWPE composites in tribounits in engineering and medicine are discussed.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

International Nuclear Information System (INIS)

Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

2010-01-01

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

2010-02-15

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

High performance fuzzy sliding mode control of DFIG supplied by seven level NPC inverter

Directory of Open Access Journals (Sweden)

Mohamed BENKAHLA

2017-09-01

Full Text Available This article presents the powers control of a variable speed wind turbine (WT based on a doubly fed induction generator (DFIG because of their advantages in terms of economy and control. The considered system consists of a double fed induction generator whose stator is connected directly to the network and its rotor is supplied by seven-level inverter with structure NPC are well used to minimize the harmonics absorbed by the DFIG. In order to control the power flowing between the stator of the DFIG and the grid. Have been studied and compared two types of controllers : Sliding Mode Control (SMC and Fuzzy SMC (FSMC. Their respective performances are compared in terms of power reference tracking, response to sudden speed variations, sensitivity to perturbations and robustness against machine parameters variations.

Modelling the initiation of basal sliding

Science.gov (United States)

Mantelli, E.; Schoof, C.

2017-12-01

The initiation of basal sliding is a thermally-controlled process that affects ice speed, englacial heat transport, and melt water production at the bed, and ultimately influences the large-scale dynamics of ice sheets. From a modelling perspective, describing the onset of sliding in thin-film models suitable for ice sheet scale simulations is problematic. In particular, previous work concluded that, under shallow-ice mechanics, the scenario of a hard switch from frozen to molten bed leads to an infinite vertical velocity at the onset, and higher-order mechanical formulations are needed to describe sliding initiation. An alternative view considers the occurrence of subtemperate sliding, which allows for a smooth sliding velocity across the onset. However, the sliding velocity decreases rapidly as temperature drops below the melting point, thus raising the issue of whether a mechanical model that does not resolve the ice sheet thickness scale is ever appropriate to model the onset of sliding. In this study we first present a boundary layer model for the hard switch scenario. Our analysis, which considers a thermo-mechanically coupled Stokes flow near the onset, shows that the abrupt onset of sliding is never possible. In fact, the acceleration of ice flow deflects the flowlines towards the bed, which freezes again immediately downstream to the onset. This leads to the conclusion that the sliding velocity must change smoothly across the onset, thus the temperature dependence of sliding needs to be taken into account. In this context, we examine a limiting case of standard temperature-dependent sliding laws, where sliding onset takes the form of an extended transition region interposed between fully frozen and temperate bed. In the transition region basal temperature is at the melting point, and the sliding velocity varies smoothly as dictated by the energy budget of the bed. As the extent of this region is not small compared to the ice sheet length scale, we couple

Brain inspired high performance electronics on flexible silicon

KAUST Repository

Sevilla, Galo T.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

Brain's stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components

Zooming in: high resolution 3D reconstruction of differently stained histological whole slide images

Science.gov (United States)

Lotz, Johannes; Berger, Judith; Müller, Benedikt; Breuhahn, Kai; Grabe, Niels; Heldmann, Stefan; Homeyer, André; Lahrmann, Bernd; Laue, Hendrik; Olesch, Janine; Schwier, Michael; Sedlaczek, Oliver; Warth, Arne

2014-03-01

Much insight into metabolic interactions, tissue growth, and tissue organization can be gained by analyzing differently stained histological serial sections. One opportunity unavailable to classic histology is three-dimensional (3D) examination and computer aided analysis of tissue samples. In this case, registration is needed to reestablish spatial correspondence between adjacent slides that is lost during the sectioning process. Furthermore, the sectioning introduces various distortions like cuts, folding, tearing, and local deformations to the tissue, which need to be corrected in order to exploit the additional information arising from the analysis of neighboring slide images. In this paper we present a novel image registration based method for reconstructing a 3D tissue block implementing a zooming strategy around a user-defined point of interest. We efficiently align consecutive slides at increasingly fine resolution up to cell level. We use a two-step approach, where after a macroscopic, coarse alignment of the slides as preprocessing, a nonlinear, elastic registration is performed to correct local, non-uniform deformations. Being driven by the optimization of the normalized gradient field (NGF) distance measure, our method is suitable for differently stained and thus multi-modal slides. We applied our method to ultra thin serial sections (2 μm) of a human lung tumor. In total 170 slides, stained alternately with four different stains, have been registered. Thorough visual inspection of virtual cuts through the reconstructed block perpendicular to the cutting plane shows accurate alignment of vessels and other tissue structures. This observation is confirmed by a quantitative analysis. Using nonlinear image registration, our method is able to correct locally varying deformations in tissue structures and exceeds the limitations of globally linear transformations.

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

International Nuclear Information System (INIS)

Xiao-Dan, Zhang; He, Zhang; Chang-Chun, Wei; Jian, Sun; Guo-Fu, Hou; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

2010-01-01

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated

Development of large area, high efficiency amorphous silicon solar cell

Energy Technology Data Exchange (ETDEWEB)

Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

1996-02-01

The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

Position sensitive detection of neutrons in high radiation background field.

Science.gov (United States)

Vavrik, D; Jakubek, J; Pospisil, S; Vacik, J

2014-01-01

We present the development of a high-resolution position sensitive device for detection of slow neutrons in the environment of extremely high γ and e(-) radiation background. We make use of a planar silicon pixelated (pixel size: 55 × 55 μm(2)) spectroscopic Timepix detector adapted for neutron detection utilizing very thin (10)B converter placed onto detector surface. We demonstrate that electromagnetic radiation background can be discriminated from the neutron signal utilizing the fact that each particle type produces characteristic ionization tracks in the pixelated detector. Particular tracks can be distinguished by their 2D shape (in the detector plane) and spectroscopic response using single event analysis. A Cd sheet served as thermal neutron stopper as well as intensive source of gamma rays and energetic electrons. Highly efficient discrimination was successful even at very low neutron to electromagnetic background ratio about 10(-4).

Talc-silicon glass-ceramic waste forms for immobilization of high- level calcined waste

International Nuclear Information System (INIS)

Vinjamuri, K.

1993-06-01

Talc-silicon glass-ceramic waste forms are being evaluated as candidates for immobilization of the high level calcined waste stored onsite at the Idaho Chemical Processing Plant. These glass-ceramic waste forms were prepared by hot isostatically pressing a mixture of simulated nonradioactive high level calcined waste, talc, silicon and aluminum metal additives. The waste forms were characterized for density, chemical durability, and glass and crystalline phase compositions. The results indicate improved density and chemical durability as the silicon content is increased

System-level integration of active silicon photonic biosensors

Science.gov (United States)

Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

2017-02-01

Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

High yield silicon carbide from alkylated or arylated pre-ceramic polymer

International Nuclear Information System (INIS)

Baney, R.H.; Gaul, J.H.

1982-01-01

Alkylated or arylated methylpolysilanes which exhibit ease of handling and are used to obtain silicon carbide ceramic materials in high yields contain 0 to 60 mole percent (CH 3 ) 2 Si double bond units and 40 to 100 mole percent CH 3 Si triple bond units, wherein there is also bonded to the silicon atoms other silicon atoms and additional alkyl radicals of 1 to 4 carbon atoms or phenyl. They may be prepared by reaction of a Grignard reagent RMgX, where X is halogen and R is Csub(1-4)-alkyl or phenyl, with a starting material which is a solid at 25 0 C, and is identical to the product except that the remaining bonds on the silicon atoms are attached to another silicon atom, or a chlorine or a bromine atom. Ceramics result from heating the polysilane products to 1200 0 C, optionally with fillers. (author)

Fuzzy Backstepping Sliding Mode Control for Mismatched Uncertain System

Directory of Open Access Journals (Sweden)

H. Q. Hou

2014-06-01

Full Text Available Sliding mode controllers have succeeded in many control problems that the conventional control theories have difficulties to deal with; however it is practically impossible to achieve high-speed switching control. Therefore, in this paper an adaptive fuzzy backstepping sliding mode control scheme is derived for mismatched uncertain systems. Firstly fuzzy sliding mode controller is designed using backstepping method based on the Lyapunov function approach, which is capable of handling mismatched problem. Then fuzzy sliding mode controller is designed using T-S fuzzy model method, it can improve the performance of the control systems and their robustness. Finally this method of control is applied to nonlinear system as a case study; simulation results are also provided the performance of the proposed controller.

Implementation of a sliding-mode-based position sensorless drive for high-speed micro permanent-magnet synchronous motors.

Science.gov (United States)

Chi, Wen-Chun; Cheng, Ming-Yang

2014-03-01

Due to issues such as limited space, it is difficult if it is not impossible to employ a position sensor in the drive control of high-speed micro PMSMs. In order to alleviate this problem, this paper analyzes and implements a simple and robust position sensorless field-oriented control method of high-speed micro PMSMs based on the sliding-mode observer. In particular, the angular position and velocity of the rotor of the high-speed micro PMSM are estimated using the sliding-mode observer. This observer is able to accurately estimate rotor position in the low speed region and guarantee fast convergence of the observer in the high speed region. The proposed position sensorless control method is suitable for electric dental handpiece motor drives where a wide speed range operation is essential. The proposed sensorless FOC method is implemented using a cost-effective 16-bit microcontroller and tested in a prototype electric dental handpiece motor. Several experiments are performed to verify the effectiveness of the proposed method. © 2013 ISA. Published by Elsevier Ltd. All rights reserved.

Development of a process for high capacity arc heater production of silicon for solar arrays

Science.gov (United States)

Meyer, T. N.

1980-01-01

A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing

International Nuclear Information System (INIS)

Voelskow, Matthias; Skorupa, Wolfgang; Pezoldt, Joerg; Kups, Thomas

2009-01-01

High intensity light pulse irradiation of monocrystalline silicon wafers is usually accompanied by inhomogeneous surface melting. The aim of the present work is to induce homogeneous buried melting in silicon by germanium implantation and subsequent flash lamp annealing. For this purpose high dose, high energy germanium implantation has been employed to lower the melting temperature of silicon in a predetermined depth region. Subsequent flash lamp irradiation at high energy densities leads to local melting of the germanium rich buried layer, whereby the thickness of the molten layer depends on the irradiation energy density. During the cooling down epitaxial crystallization takes place resulting in a largely defect-free layer. The combination of buried melting and dopant segregation has the potential to produce unusually buried doping profiles or to create strained silicon structures.

Multimodality Imaging-based Evaluation of Single-Lumen Silicone Breast Implants for Rupture.

Science.gov (United States)

Seiler, Stephen J; Sharma, Pooja B; Hayes, Jody C; Ganti, Ramapriya; Mootz, Ann R; Eads, Emily D; Teotia, Sumeet S; Evans, W Phil

2017-01-01

Breast implants are frequently encountered on breast imaging studies, and it is essential for any radiologist interpreting these studies to be able to correctly assess implant integrity. Ruptures of silicone gel-filled implants often occur without becoming clinically obvious and are incidentally detected at imaging. Early diagnosis of implant rupture is important because surgical removal of extracapsular silicone in the breast parenchyma and lymphatics is difficult. Conversely, misdiagnosis of rupture may prompt a patient to undergo unnecessary additional surgery to remove the implant. Mammography is the most common breast imaging examination performed and can readily depict extracapsular free silicone, although it is insensitive for detection of intracapsular implant rupture. Ultrasonography (US) can be used to assess the internal structure of the implant and may provide an economical method for initial implant assessment. Common US signs of intracapsular rupture include the "keyhole" or "noose" sign, subcapsular line sign, and "stepladder" sign; extracapsular silicone has a distinctive "snowstorm" or echogenic noise appearance. Magnetic resonance (MR) imaging is the most accurate and reliable means for assessment of implant rupture and is highly sensitive for detection of both intracapsular and extracapsular rupture. MR imaging findings of intracapsular rupture include the keyhole or noose sign, subcapsular line sign, and "linguine" sign, and silicone-selective MR imaging sequences are highly sensitive to small amounts of extracapsular silicone. © RSNA, 2017.

Study of high energy ion implantation of boron and oxygen in silicon

International Nuclear Information System (INIS)

Thevenin, P.

1991-06-01

Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

A monolithic 640 × 512 CMOS imager with high-NIR sensitivity

Science.gov (United States)

Lauxtermann, Stefan; Fisher, John; McDougal, Michael

2014-06-01

In this paper we present first results from a backside illuminated CMOS image sensor that we fabricated on high resistivity silicon. Compared to conventional CMOS imagers, a thicker photosensitive membrane can be depleted when using silicon with low background doping concentration while maintaining low dark current and good MTF performance. The benefits of such a fully depleted silicon sensor are high quantum efficiency over a wide spectral range and a fast photo detector response. Combining these characteristics with the circuit complexity and manufacturing maturity available from a modern, mixed signal CMOS technology leads to a new type of sensor, with an unprecedented performance spectrum in a monolithic device. Our fully depleted, backside illuminated CMOS sensor was designed to operate at integration times down to 100nsec and frame rates up to 1000Hz. Noise in Integrate While Read (IWR) snapshot shutter operation for these conditions was simulated to be below 10e- at room temperature. 2×2 binning with a 4× increase in sensitivity and a maximum frame rate of 4000 Hz is supported. For application in hyperspectral imaging systems the full well capacity in each row can individually be programmed between 10ke-, 60ke- and 500ke-. On test structures we measured a room temperature dark current of 360pA/cm2 at a reverse bias of 3.3V. A peak quantum efficiency of 80% was measured with a single layer AR coating on the backside. Test images captured with the 50μm thick VGA imager between 30Hz and 90Hz frame rate show a strong response at NIR wavelengths.

A broadband-sensitive upconverter La(Ga{sub 0.5}Sc{sub 0.5})O{sub 3}:Er,Ni,Nb for crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Takeda, Yasuhiko, E-mail: takeda@mosk.tytlabs.co.jp; Mizuno, Shintaro; Luitel, Hom Nath; Tani, Toshihiko [Toyota Central Research and Development Laboratories, Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan)

2016-01-25

We have developed an upconverter that significantly broadens the sensitive range, to overcome the shortcoming that conventional Er{sup 3+}-doped upconverters used for crystalline silicon solar cells can utilize only a small portion of the solar spectrum at around 1.55 μm. We have designed the combination of the sensitizers and host material to utilize photons not absorbed by silicon or Er{sup 3+} ions. Ni{sup 2+} ions have been selected as the sensitizers that absorb photons in the wavelength range between the silicon absorption edge (1.1 μm) and the Er{sup 3+} absorption band and transfer the energies to the Er{sup 3+} emitters, with La(Ga,Sc)O{sub 3} as the host material. The Ga to Sc ratio has been optimized to tune the location of the Ni{sup 2+} absorption band for sufficient energy transfer. Co-doping with Nb{sup 5+} ions is needed for charge balance to introduce divalent Ni{sup 2+} ions into the trivalent Ga{sup 3+} and Sc{sup 3+} sites. In addition to 1.45–1.58 μm photons directly absorbed by the Er{sup 3+} ions, we have demonstrated upconversion of 1.1–1.35 μm photons in the Ni{sup 2+} absorption band to 0.98 μm photons, using 10% Er, 0.5% Ni, and 0.5% Nb-doped La(Ga{sub 0.5}Sc{sub 0.5})O{sub 3}. The broadband-sensitive upconverter developed here can improve conversion efficiency of crystalline silicon solar cells more notably than conventional ones.

A prototype silicon detector system for space cosmic-ray charge measurement

Science.gov (United States)

Zhang, Fei; Fan, Rui-Rui; Peng, Wen-Xi; Dong, Yi-Fa; Gong, Ke; Liang, Xiao-Hua; Liu, Ya-Qing; Wang, Huan-Yu

2014-06-01

A readout electronics system used for space cosmic-ray charge measurement for multi-channel silicon detectors is introduced in this paper, including performance measurements. A 64-channel charge sensitive ASIC (VA140) from the IDEAS company is used. With its features of low power consumption, low noise, large dynamic range, and high integration, it can be used in future particle detecting experiments based on silicon detectors.

Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling

Science.gov (United States)

Erzar, Benjamin

2017-01-01

Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 103 to 104 s−1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual–Forquin–Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones. This article is part of the themed issue ‘Experimental testing and modelling of brittle materials at high strain rates’. PMID:27956504

Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling.

Science.gov (United States)

Zinszner, Jean-Luc; Erzar, Benjamin; Forquin, Pascal

2017-01-28

Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 10 3 to 10 4  s -1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual-Forquin-Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones.This article is part of the themed issue 'Experimental testing and modelling of brittle materials at high strain rates'. © 2016 The Author(s).

Strain rate sensitivity of the tensile strength of two silicon carbides: experimental evidence and micromechanical modelling

Science.gov (United States)

Zinszner, Jean-Luc; Erzar, Benjamin; Forquin, Pascal

2017-01-01

Ceramic materials are commonly used to design multi-layer armour systems thanks to their favourable physical and mechanical properties. However, during an impact event, fragmentation of the ceramic plate inevitably occurs due to its inherent brittleness under tensile loading. Consequently, an accurate model of the fragmentation process is necessary in order to achieve an optimum design for a desired armour configuration. In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 103 to 104 s-1 using a high-pulsed power generator. These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade. The microstructural properties of the ceramics appear to play an important role on the strain rate sensitivity and on the dynamic tensile strength. Moreover, this experimental configuration allows for recovering damaged, but unbroken specimens, giving unique insight on the fragmentation process initiated in the ceramics. All the collected data have been compared with corresponding results of numerical simulations performed using the Denoual-Forquin-Hild anisotropic damage model. Good agreement is observed between numerical simulations and experimental data in terms of free surface velocity, size and location of the damaged zones along with crack density in these damaged zones. This article is part of the themed issue 'Experimental testing and modelling of brittle materials at high strain rates'.

Tunable detection sensitivity of opiates in urine via a label-free porous silicon competitive inhibition immunosensor.

Science.gov (United States)

Bonanno, Lisa M; Delouise, Lisa A

2010-01-15

Currently, there is need for laboratory-based high-throughput and reliable point-of-care drug screening methodologies. We demonstrate here a chip-based label-free porous silicon (PSi) photonic sensor for detecting opiates in urine. This technique provides a cost-effective alternative to conventional labeled drug screening immunoassays with potential for translation to multiplexed analysis. Important effects of surface chemistry and competitive binding assay protocol on the sensitivity of opiate detection are revealed. Capability to tune sensitivity and detection range over approximately 3 orders of magnitude (18.0 nM to 10.8 muM) was achieved by varying the applied urine specimen volume (100-5 muL), which results in systematic shifts in the competitive binding response curve. A detection range (0.36-4.02 muM) of morphine in urine (15 muL) was designed to span the current positive cutoff value (1.05 muM morphine) in medical opiate urine screening. Desirable high cross-reactivity to oxycodone, in addition to other common opiates, morphine, morphine-3-glucuronide, 6-acetyl morphine, demonstrates an advantage over current commercial screening assays, while low interference with cocaine metabolite was maintained. This study uniquely displays PSi sensor technology as an inexpensive, rapid, and reliable drug screening technology. Furthermore, the versatile surface chemistry developed can be implemented on a range of solid-supported sensors to conduct competitive inhibition assays.

High quality silicon-based substrates for microwave and millimeter wave passive circuits

Science.gov (United States)

Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

2017-09-01

Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

Influence of external effects on the electron silicon properties

International Nuclear Information System (INIS)

Orazgulyev, B.; Bigozha, O.D.

2005-01-01

It is noted, that study of angular dependence of longitudinal piezo-resistance of n-type silicon presents the both scientific and practical interest because the obtained data could serve the ground for creating a high-sensitive piezo-sensors. Measurement of angular dependence allows objectively estimate the errors of anisotropy parameter determination, constant of deformation potential caused of mistakes in maintenance of crystallographic directions during the samples production process. In the case of X||J||[111] at one-axis deformation a new kind of piezo-effect in electron silicon is revealed. It is explained by transformation of iso-energy rotation ellipsoid into three-axis ellipsoid at presence of shear silicon crystal deformation

Autoionizing states in highly ionized oxygen, fluorine and silicon

International Nuclear Information System (INIS)

Forester, J.P.; Peterson, R.S.; Griffin, P.M.; Pegg, D.J.; Haselton, H.H.; Liao, K.H.; Sellin, I.A.; Mowat, J.R.; Thoe, R.S.

1975-01-01

Autoionizing states in high Z 3-electron ions associated with core excited configurations of the type 1s2snl and 1s2pnl are reported. The electron decay-in-flight spectra of lithium-like oxygen, fluorine, and silicon ions are presented. Initial beam energies of 6.75-MeV oxygen and fluorine ions and 22.5-MeV silicon ions were used. Stripping and excitation were done by passing the beams through a thin carbon foil. The experimental technique is described. 4 figs, 1 table, 7 refs

High mechanical Q-factor measurements on silicon bulk material

Energy Technology Data Exchange (ETDEWEB)

Schwarz, Christian; Nawrodt, Ronny; Heinert, Daniel; Schroeter, Anja; Neubert, Ralf; Thuerk, Matthias; Vodel, Wolfgang; Seidel, Paul [Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, Andreas [Institut fuer Angewandte Physik, Albert-Einstein-Strasse 15, D-07745 Jena (Germany)

2008-07-01

The direct observation of gravitational waves is one of the biggest challenges in science. Current detectors are limited by different kinds of noise. One of the fundamental noise sources is thermal noise arising from the optical components. One of the most promising attempts to reduce the thermal noise contribution in future detectors will be the use of high Q-factor materials at cryogenic temperatures. Silicon seems to be the most interesting material due to its excellent optical and thermal properties. We present high Q-factor measurements on bulk samples of high purity silicon in a temperature range from 5 to 300 K. The sample dimensions vary between 76.2 mm x 12..75 mm. The Q-factor exceeds 4.10{sup 8} at 6 K. The influence of the crystal orientation, doping and the sample preparation on the Q-factor is discussed.

Multiplexed Simultaneous High Sensitivity Sensors with High-Order Mode Based on the Integration of Photonic Crystal 1 × 3 Beam Splitter and Three Different Single-Slot PCNCs

Directory of Open Access Journals (Sweden)

Jian Zhou

2016-07-01

Full Text Available We simulated an efficient method for the sensor array of high-sensitivity single-slot photonic crystal nanobeam cavities (PCNCs on a silicon platform. With the combination of a well-designed photonic crystal waveguide (PhCW filter and an elaborate single-slot PCNC, a specific high-order resonant mode was filtered for sensing. A 1 × 3 beam splitter carefully established was implemented to split channels and integrate three sensors to realize microarrays. By applying the three-dimensional finite-difference-time-domain (3D-FDTD method, the sensitivities calculated were S1 = 492 nm/RIU, S2 = 244 nm/RIU, and S3 = 552 nm/RIU, respectively. To the best of our knowledge, this is the first multiplexing design in which each sensor cite features such a high sensitivity simultaneously.

TRANSFORMATIONS IN NANO-DIAMONDS WITH FORMATION OF NANO-POROUS SILICON CARBIDE AT HIGH PRESSURE

Directory of Open Access Journals (Sweden)

V. N. Kovalevsky

2010-01-01

Full Text Available The paper contains investigations on regularities of diamond - silicon carbide composite structure formation at impact-wave excitation. It has been determined that while squeezing a porous blank containing Si (SiC nano-diamond by explosive detonation products some processes are taking place such as diamond nano-particles consolidation, reverse diamond transition into graphite, fragments formation from silicon carbide. A method for obtaining high-porous composites with the presence of ultra-disperse diamond particles has been developed. Material with three-dimensional high-porous silicon-carbide structure has been received due to nano-diamond graphitation at impact wave transmission and plastic deformation. The paper reveals nano-diamonds inverse transformation into graphite and its subsequent interaction with the silicon accompanied by formation of silicon-carbide fragments with dimensions of up to 100 nm.

Silicon photomultiplier as a detector of Cherenkov photons

International Nuclear Information System (INIS)

Korpar, S.; Dolenec, R.; Hara, K.; Iijima, T.; Krizan, P.; Mazuka, Y.; Pestotnik, R.; Stanovnik, A.; Yamaoka, M.

2008-01-01

A novel photon detector-i.e. the silicon photomultiplier-whose main advantage over conventional photomultiplier tubes is the operation in high magnetic fields, has been tested as a photon detector in a proximity focusing RICH with aerogel radiator. This type of RICH counter is proposed for the upgrade of the Belle detector at the KEK B-factory. Recently produced silicon photomultipliers show less noise and have larger size, which are important issues for a large area photon detector. We measured the single photon pulse height distribution, the timing resolution and the position sensitivity for different silicon photomultipliers (Hamamatsu MPPC HC025, HC050, and HC100). The silicon photomultipliers were then used to detect Cherenkov photons emitted by cosmic ray particles in a proximity focusing aerogel RICH. Various light guides were investigated in order to increase the detection efficiency

Design of a Piezoelectric Accelerometer with High Sensitivity and Low Transverse Effect

Directory of Open Access Journals (Sweden)

Bian Tian

2016-09-01

Full Text Available In order to meet the requirements of cable fault detection, a new structure of piezoelectric accelerometer was designed and analyzed in detail. The structure was composed of a seismic mass, two sensitive beams, and two added beams. Then, simulations including the maximum stress, natural frequency, and output voltage were carried out. Moreover, comparisons with traditional structures of piezoelectric accelerometer were made. To verify which vibration mode is the dominant one on the acceleration and the space between the mass and glass, mode analysis and deflection analysis were carried out. Fabricated on an n-type single crystal silicon wafer, the sensor chips were wire-bonged to printed circuit boards (PCBs and simply packaged for experiments. Finally, a vibration test was conducted. The results show that the proposed piezoelectric accelerometer has high sensitivity, low resonance frequency, and low transverse effect.

Effect of fluorocarbon self-assembled monolayer films on sidewall adhesion and friction of surface micromachines with impacting and sliding contact interfaces

International Nuclear Information System (INIS)

Xiang, H.; Komvopoulos, K.

2013-01-01

A self-assembled monolayer film consisting of fluoro-octyltrichlorosilane (FOTS) was vapor-phase deposited on Si(100) substrates and polycrystalline silicon (polysilicon) surface micromachines. The hydrophobic behavior and structural composition of the FOTS film deposited on Si(100) were investigated by goniometry and X-ray photoelectron spectroscopy, respectively. The effects of contact pressure, relative humidity, temperature, and impact/sliding cycles on the adhesive and friction behavior of uncoated and FOTS-coated polysilicon micromachines (referred to as the Si and FOTS/Si micromachines, respectively) were investigated under controlled loading and environmental conditions. FOTS/Si micromachines demonstrated much lower and stable adhesion than Si micromachines due to the highly hydrophobic and conformal FOTS film. Contrary to Si micromachines, sidewall adhesion of FOTS/Si micromachines demonstrated a weak dependence on relative humidity, temperature, and impact cycles. In addition, FOTS/Si micromachines showed low and stable adhesion and low static friction for significantly more sliding cycles than Si micromachines. The adhesive and static friction characteristics of Si and FOTS/Si micromachines are interpreted in the context of physicochemical surface changes, resulting in the increase of the real area of contact and a hydrophobic-to-hydrophilic transition of the surface chemical characteristics caused by nanoscale surface smoothening and the removal of the organic residue (Si micromachines) or the FOTS film (FOTS/Si micromachines) during repetitive impact and oscillatory sliding of the sidewall surfaces.

Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

Science.gov (United States)

Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

2016-06-28

Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

Position-sensitive silicon strip detector characterization using particle beams

CERN Document Server

Maenpaeae, Teppo

2012-01-01

Silicon strip detectors are fast, cost-effective and have an excellent spatial resolution.They are widely used in many high-energy physics experiments. Modern high energyphysics experiments impose harsh operation conditions on the detectors, e.g., of LHCexperiments. The high radiation doses cause the detectors to eventually fail as a resultof excessive radiation damage. This has led to a need to study radiation tolerance usingvarious techniques. At the same time, a need to operate sensors approaching the endtheir lifetimes has arisen.The goal of this work is to demonstrate that novel detectors can survive the environment that is foreseen for future high-energy physics experiments. To reach this goal,measurement apparatuses are built. The devices are then used to measure the propertiesof irradiated detectors. The measurement data are analyzed, and conclusions are drawn.Three measurement apparatuses built as a part of this work are described: two telescopes measuring the tracks of the beam of a particle acceler...

A study on the beta voltaic micro-nuclear battery based on the planar technology silicon detector

International Nuclear Information System (INIS)

Zhang Kai; He Gaokui; Huang Xiaojian; Liu Yang; Meng Xin; Hao Xiaoyong

2011-01-01

It describes briefly the beta voltaic micro-nuclear battery based on the planar technology silicon detector and radioisotope. Different sensitive area of silicon detectors are used to cooperate with 63 Ni source to buildup of beta voltaic micro-nuclear batteries. The experimental data show that the larger sensitive area the silicon detector has, the higher open circuit voltage it produces, and the open circuit voltage of single cell has reached an excellent result from 0.15 V to 0.30 V. It is possible to get high output power by series or parallel connecting the beta voltaic micro-nuclear batteries. (authors)

High frequency guided wave propagation in monocrystalline silicon wafers

Science.gov (United States)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2017-04-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

Brain inspired high performance electronics on flexible silicon

KAUST Repository

Sevilla, Galo T.

2014-06-01

Brain\\'s stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components [1], they can perform 1016 operations per second while consuming less power than an electrical light bulb. In order to perform the same amount of computation with today\\'s most advanced computers, the output of an entire power station would be needed. In that sense, to obtain brain like computation, ultra-fast devices with ultra-low power consumption will have to be integrated in extremely reduced areas, achievable only if brain folded structure is mimicked. Therefore, to allow brain-inspired computation, flexible and transparent platform will be needed to achieve foldable structures and their integration on asymmetric surfaces. In this work, we show a new method to fabricate 3D and planar FET architectures in flexible and semitransparent silicon fabric without comprising performance and maintaining cost/yield advantage offered by silicon-based electronics.

Proposal of a broadband, polarization-insensitive and high-efficiency hot-carrier schottky photodetector integrated with a plasmonic silicon ridge waveguide

International Nuclear Information System (INIS)

Yang, Liu; Kou, Pengfei; Shen, Jianqi; Lee, El Hang; He, Sailing

2015-01-01

We propose a broadband, polarization-insensitive and high-efficiency plasmonic Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission (IPE). The distinctive features of this design are that it has a gold film covering both the top and the sidewalls of a dielectric silicon ridge waveguide with the Schottky contact formed at the gold–silicon interface and the sidewall coverage of gold can be easily tuned by an insulating layer. An extensive physical model on IPE of hot carriers is presented in detail and is applied to calculate and examine the performance of this detector. In comparison with a diode having only the top gold contact, the polarization sensitivity of the responsivity is greatly minimized in our photodetector with gold film covering both the top and the sidewall. Much higher responsivities for both polarizations are also achieved over a broad wavelength range of 1.2–1.6 μm. Moreover, the Schottky contact is only 4 μm long, leading to a very small dark current. Our design is very promising for practical applications in high-density silicon photonic integration. (paper)

Electrothermal Behavior of High-Frequency Silicon-On-Glass Transistors

NARCIS (Netherlands)

Nenadovic, N.

2004-01-01

In this thesis, research is focused on the investigation of electrothermal effects in high-speed silicon transistors. At high current levels the power dissipation in these devices can lead to heating of both the device itself and the adjacent devices. In advanced transistors these effects are

Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

Directory of Open Access Journals (Sweden)

Sebastian Gutsch

2015-04-01

Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

Angle-resolved diffraction grating biosensor based on porous silicon

Energy Technology Data Exchange (ETDEWEB)

Lv, Changwu; Li, Peng [School of Physical Science and Technology, Xinjiang University, Urumqi 830046 (China); Jia, Zhenhong, E-mail: jzhh@xju.edu.cn; Liu, Yajun; Mo, Jiaqing; Lv, Xiaoyi [College of Information Science and Engineering, Xinjiang University, Urumqi 830046 (China)

2016-03-07

In this study, an optical biosensor based on a porous silicon composite structure was fabricated using a simple method. This structure consists of a thin, porous silicon surface diffraction grating and a one-dimensional porous silicon photonic crystal. An angle-resolved diffraction efficiency spectrum was obtained by measuring the diffraction efficiency at a range of incident angles. The angle-resolved diffraction efficiency of the 2nd and 3rd orders was studied experimentally and theoretically. The device was sensitive to the change of refractive index in the presence of a biomolecule indicated by the shift of the diffraction efficiency spectrum. The sensitivity of this sensor was investigated through use of an 8 base pair antifreeze protein DNA hybridization. The shifts of the angle-resolved diffraction efficiency spectrum showed a relationship with the change of the refractive index, and the detection limit of the biosensor reached 41.7 nM. This optical device is highly sensitive, inexpensive, and simple to fabricate. Using shifts in diffraction efficiency spectrum to detect biological molecules has not yet been explored, so this study establishes a foundation for future work.

Palladium Gate All Around - Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor

Science.gov (United States)

Madan, Jaya; Chaujar, Rishu

2016-12-01

The paper presents a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism. Here, the Palladium supported silicon dioxide is used as a sensing media and sensing relies on the interaction of hydrogen with Palladium-SiO2-Si. The high surface to volume ratio in the case of cylindrical GAA structure enhances the fortuities for surface reactions between H2 gas and Pd, and thus improves the sensitivity and stability of the sensor. Behaviour of the sensor in presence of hydrogen and at elevated temperatures is discussed. The conduction path of the sensor which is dependent on sensors radius has also been varied for the optimized sensitivity and static performance analysis of the sensor where the proposed design exhibits a superior performance in terms of threshold voltage, subthreshold swing, and band to band tunneling rate. Stability of the sensor with respect to temperature affectability has also been studied, and it is found that the device is reasonably stable and highly sensitive over the bearable temperature range. The successful utilization of HD-GAA-TFET in gas sensors may open a new door for the development of novel nanostructure gas sensing devices.

Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng

2009-09-09

We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires showed great performance as anode material. Since carbon has a much smaller capacity compared to silicon, the carbon core experiences less structural stress or damage during lithium cycling and can function as a mechanical support and an efficient electron conducting pathway. These nanowires have a high charge storage capacity of ∼2000 mAh/g and good cycling life. They also have a high Coulmbic efficiency of 90% for the first cycle and 98-99.6% for the following cycles. A full cell composed of LiCoO2 cathode and carbon-silicon core-shell nanowire anode is also demonstrated. Significantly, using these core-shell nanowires we have obtained high mass loading and an area capacity of ∼4 mAh/cm2, which is comparable to commercial battery values. © 2009 American Chemical Society.

Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

Science.gov (United States)

Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

2015-10-05

In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

KAUST Repository

Sallam, M. O.

2011-07-01

Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of U-turn that causes 180 phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 and excited with 90 phase shift. Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency. © 2011 IEEE.

High-contrast gratings for long-wavelength laser integration on silicon

Science.gov (United States)

Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

2014-02-01

Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

Highly Porous Silicon Embedded in a Ceramic Matrix: A Stable High-Capacity Electrode for Li-Ion Batteries.

Science.gov (United States)

Vrankovic, Dragoljub; Graczyk-Zajac, Magdalena; Kalcher, Constanze; Rohrer, Jochen; Becker, Malin; Stabler, Christina; Trykowski, Grzegorz; Albe, Karsten; Riedel, Ralf

2017-11-28

We demonstrate a cost-effective synthesis route that provides Si-based anode materials with capacities between 2000 and 3000 mAh·g Si -1 (400 and 600 mAh·g composite -1 ), Coulombic efficiencies above 99.5%, and almost 100% capacity retention over more than 100 cycles. The Si-based composite is prepared from highly porous silicon (obtained by reduction of silica) by encapsulation in an organic carbon and polymer-derived silicon oxycarbide (C/SiOC) matrix. Molecular dynamics simulations show that the highly porous silicon morphology delivers free volume for the accommodation of strain leading to no macroscopic changes during initial Li-Si alloying. In addition, a carbon layer provides an electrical contact, whereas the SiOC matrix significantly diminishes the interface between the electrolyte and the electrode material and thus suppresses the formation of a solid-electrolyte interphase on Si. Electrochemical tests of the micrometer-sized, glass-fiber-derived silicon demonstrate the up-scaling potential of the presented approach.

Suppressing segregation in highly phosphorus doped silicon monolayers

NARCIS (Netherlands)

Keizer, Joris; Kölling, Sebastian; Koenraad, Paul; Simmons, Michelle Y.

2015-01-01

Sharply defined dopant profiles and low resistivity are highly desired qualities in the microelectronic industry, and more recently, in the development of an all epitaxial Si:P based quantum computer. In this work, we use thin (monolayers thick) room temperature grown silicon layers, so-called

High power terahertz induced carrier multiplication in Silicon

DEFF Research Database (Denmark)

Tarekegne, Abebe Tilahun; Pedersen, Pernille Klarskov; Iwaszczuk, Krzysztof

2015-01-01

The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons....

High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

Science.gov (United States)

Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

2014-01-01

Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

Whole slide imaging in pathology: advantages, limitations, and emerging perspectives

Directory of Open Access Journals (Sweden)

Farahani N

2015-06-01

Full Text Available Navid Farahani,1 Anil V Parwani,2 Liron Pantanowitz2 1Department of Pathology and Laboratory Medicine, Cedars-Sinai Medical Center, Los Angeles, CA, USA; 2Department of Pathology, University of Pittsburgh School of Medicine, Pittsburgh, PA, USA Abstract: Significant technologic gains have led to the adoption of innovative digital imaging solutions in pathology. Whole slide imaging (WSI, which refers to scanning of conventional glass slides in order to produce digital slides, is the most recent imaging modality being employed by pathology departments worldwide. WSI continues to gain traction among pathologists for diagnostic, educational, and research purposes. This article provides a technologic review of WSI platforms and covers clinical and nonclinical pathology applications of these imaging systems. Barriers to adoption of WSI include limiting technology, image quality, problems with scanning all materials (eg, cytology slides, cost, digital slide storage, inability to handle high-throughput routine work, regulatory barriers, ergonomics, and pathologists' reluctance. Emerging issues related to clinical validation, standardization, and forthcoming advances in the field are also addressed. Keywords: digital, imaging, microscopy, pathology, validation, whole slide image, telepathology

EXPERIMENTAL INVESTIGATION ON TRIBOLOGICAL CHARACTERISTICS OF SILICON NITRIDE REINFORCED ALUMINIUM METAL MATRIX COMPOSITES

Directory of Open Access Journals (Sweden)

D. BHUVANESH

2017-05-01

Full Text Available Aluminium alloy (LM25 reinforced with silicon nitride was fabricated by liquid metallurgy route. The fabricated composite was investigated for dry sliding wear behaviour by conducting experiments using pin-on-disc tribometer. Set of experiments were planned using Taguchi’s technique and data analysis was carried out using L27 orthogonal array. Analysis of Variance (ANOVA technique was used to determine the significance of parameter with respect to wear rate. Signal-to-Noise ratio was employed to detect the most and least influential parameter as well as their level of influence. ‘Smaller the wear’ characteristic was chosen for the analysis of dry sliding wear. Results implied that, the load has the primary effect on the wear succeeded by the effect of sliding velocity and sliding distance. Scanning Electronic Microscopic studies were carried out on worn surfaces to understand the wear mechanism.Tribological results indicated that LM25 aluminium alloy could be better utilized as a material for piston, rotor and bearings for long life in low speed applications.

Exact docking flight controller for autonomous aerial refueling with back-stepping based high order sliding mode

Science.gov (United States)

Su, Zikang; Wang, Honglun; Li, Na; Yu, Yue; Wu, Jianfa

2018-02-01

Autonomous aerial refueling (AAR) exact docking control has always been an intractable problem due to the strong nonlinearity, the tight coupling of the 6 DOF aircraft model and the complex disturbances of the multiple environment flows. In this paper, the strongly coupled nonlinear 6 DOF model of the receiver aircraft which considers the multiple flow disturbances is established in the affine nonlinear form to facilitate the nonlinear controller design. The items reflecting the influence of the unknown flow disturbances in the receiver dynamics are taken as the components of the "lumped disturbances" together with the items which have no linear correlation with the virtual control variables. These unmeasurable lumped disturbances are estimated and compensated by a specially designed high order sliding mode observer (HOSMO) with excellent estimation property. With the compensation of the estimated lumped disturbances, a back-stepping high order sliding mode based exact docking flight controller is proposed for AAR in the presence of multiple flow disturbances. Extensive simulation results demonstrate the feasibility and superiority of the proposed docking controller.

Experimental Investigation on the Characteristics of Sliding Discharge Plasma Aerodynamic Actuation

International Nuclear Information System (INIS)

Song Huimin; Zhang Qiaogen; Li Yinghong; Jia Min; Wu Yun

2011-01-01

A new electrical discharge called sliding discharge was developed to generate plasma aerodynamic actuation for flow control. A microsecond-pulse high voltage with a DC component was used to energize a three-electrode actuator to generate sliding discharge. The characteristics of plasma aerodynamic actuation by sliding discharge were experimentally investigated. Discharge morphology shows that sliding discharge is formed when energized by properly adjusting microsecond-pulse and DC voltage. Compared to dielectric barrier discharge (DBD), the plasma extension of sliding discharge is quasi-diffusive and stable but longer and more intensive. Results from particle image velocimetry (PIV) test indicate that plasma aerodynamic actuation by sliding discharge can induce a ‘starting vortex’ and a quasi-steady ‘near-wall jet’. Body force induced by plasma aerodynamic actuation is about the order of mN, which is stronger than that induced by single DBD. It is inferred that microsecond-pulse sliding discharge may be more effective to generate large-scale plasma aerodynamic actuation, which is very promising for improving aircraft aerodynamic characteristics and propulsion efficiency.

Experimental Investigation on the Characteristics of Sliding Discharge Plasma Aerodynamic Actuation

Science.gov (United States)

Song, Huimin; Li, Yinghong; Zhang, Qiaogen; Jia, Min; Wu, Yun

2011-10-01

A new electrical discharge called sliding discharge was developed to generate plasma aerodynamic actuation for flow control. A microsecond-pulse high voltage with a DC component was used to energize a three-electrode actuator to generate sliding discharge. The characteristics of plasma aerodynamic actuation by sliding discharge were experimentally investigated. Discharge morphology shows that sliding discharge is formed when energized by properly adjusting microsecond-pulse and DC voltage. Compared to dielectric barrier discharge (DBD), the plasma extension of sliding discharge is quasi-diffusive and stable but longer and more intensive. Results from particle image velocimetry (PIV) test indicate that plasma aerodynamic actuation by sliding discharge can induce a ‘starting vortex’ and a quasi-steady ‘near-wall jet’. Body force induced by plasma aerodynamic actuation is about the order of mN, which is stronger than that induced by single DBD. It is inferred that microsecond-pulse sliding discharge may be more effective to generate large-scale plasma aerodynamic actuation, which is very promising for improving aircraft aerodynamic characteristics and propulsion efficiency.

Elastomers in Combined Rolling-Sliding Contact; Wear and its Underlying Mechanisms

Science.gov (United States)

Rowe, Kyle Gene

Elastomeric materials, specifically rubbers, being both of a practical and scientific importance, have been the subjects of vast amounts of research spanning well over two centuries. There is currently a large effort by tire manufacturers to design new rubber compounds with lower rolling resistance, higher sliding friction, and reduced or predictable wear. At present, these efforts are primarily based on a few empirical rules and very costly trial and error testing; only a basic understanding of the mechanisms involved in the wear of elastomeric materials exists despite rigorous study. In general, the only well controlled experiments have been for simple loading and sliding schemes. The aim of this work is to characterize the tribological properties of a carbon black filled natural rubber sample. This work explores (1) its behavior in unidirectional sliding, (2) contact mechanics, (3) traction properties in combined rolling and sliding, (4) frictional heating response, and (5) wear. It was found that the friction coefficient of this material was dependent upon sliding velocity, contact pressure, and surface roughness. The high friction coefficients also lead to a bifurcation of the contact area into two different pressure regimes at sliding velocities greater than 10 mm/s . The traction response of this material in combined rolling and sliding exhibited similar behavior, being a function of the contact pressure, but not rolling velocity. The wear of this material was found to be linearly dependent upon the global slip condition and occurred preferentially on the sample. Investigations of the worn surface revealed that the most likely mechanism of wear is the degradation of surface material in a confined layer a few micrometers thick. A simple spring-mass model was developed to offer an explanation of localized wear. It was found that the coupling of system elements in the normal direction helped to shift the load from wearing elements to non-wearing ones. The

Influence of normal loads and sliding velocities on friction properties of engineering plastics sliding against rough counterfaces

International Nuclear Information System (INIS)

Nuruzzaman, D M; Chowdhury, M A; Rahaman, M L; Oumer, A N

2016-01-01

Friction properties of plastic materials are very important under dry sliding contact conditions for bearing applications. In the present research, friction properties of engineering plastics such as polytetrafluoroethylene (PTFE) and nylon are investigated under dry sliding contact conditions. In the experiments, PTFE and nylon slide against different rough counterfaces such as mild steel and stainless steel 316 (SS 316). Frictional tests are carried out at low loads 5, 7.5 and 10 N, low sliding velocities 0.5, 0.75 and 1 m/s and relative humidity 70%. The obtained results reveal that friction coefficient of PTFE increases with the increase in normal loads and sliding velocities within the observed range. On the other hand, frictional values of nylon decrease with the increase in normal loads and sliding velocities. It is observed that in general, these polymers show higher frictional values when sliding against SS 316 rather than mild steel. During running-in process, friction coefficient of PTFE and nylon steadily increases with the increase in rubbing time and after certain duration of rubbing, it remains at steady level. At identical operating conditions, the frictional values are significantly different depending on normal load, sliding velocity and material pair. It is also observed that in general, the influence of normal load on the friction properties of PTFE and nylon is greater than that of sliding velocity. (paper)

Enabling electrolyte compositions for columnar silicon anodes in high energy secondary batteries

Science.gov (United States)

Piwko, Markus; Thieme, Sören; Weller, Christine; Althues, Holger; Kaskel, Stefan

2017-09-01

Columnar silicon structures are proven as high performance anodes for high energy batteries paired with low (sulfur) or high (nickel-cobalt-aluminum oxide, NCA) voltage cathodes. The introduction of a fluorinated ether/sulfolane solvent mixture drastically improves the capacity retention for both battery types due to an improved solid electrolyte interface (SEI) on the surface of the silicon electrode which reduces irreversible reactions normally causing lithium loss and rapid capacity fading. For the lithium silicide/sulfur battery cycling stability is significantly improved as compared to a frequently used reference electrolyte (DME/DOL) reaching a constant coulombic efficiency (CE) as high as 98%. For the silicon/NCA battery with higher voltage, the addition of only small amounts of fluoroethylene carbonate (FEC) to the novel electrolyte leads to a stable capacity over at least 50 cycles and a CE as high as 99.9%. A high volumetric energy density close to 1000 Wh l-1 was achieved with the new electrolyte taking all inactive components of the stack into account for the estimation.

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.

2018-01-02

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.; Kutbee, Arwa T.; Khan, Sherjeel M.; Sepulveda, Adrian C.; Wicaksono, Irmandy; Nour, Maha A.; Wehbe, Nimer; Almislem, Amani Saleh Saad; Ghoneim, Mohamed T.; Sevilla, Galo T.; Syed, Ahad; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

2018-01-01

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Direct Electroplating on Highly Doped Patterned Silicon Wafers

NARCIS (Netherlands)

Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

Nickel thin films have been electrodeposited directly on highly doped silicon wafers after removal of the native oxide layer. These substrates conduct sufficiently well to allow deposition using a periferical electrical contact on the wafer. Films 2 μm thick were deposited using a nickel sulfamate

X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

International Nuclear Information System (INIS)

Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

1998-01-01

We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

Silicon integrated circuit process

International Nuclear Information System (INIS)

Lee, Jong Duck

1985-12-01

This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

Silicon integrated circuit process

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Duck

1985-12-15

This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

Silicon micromachined vibrating gyroscopes

Science.gov (United States)

Voss, Ralf

1997-09-01

This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

Heavy doping effects in high efficiency silicon solar cells

Science.gov (United States)

Lindholm, F. A.; Neugroschel, A.

1986-01-01

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

Friction and Wear of Metals With a Single-Crystal Abrasive Grit of Silicon Carbide - Effect of Shear Strength of Metal

National Research Council Canada - National Science Library

Miyoshi, Kazuhisa

1978-01-01

An investigation was conducted to examine the removal and plastic deformation of metal as a function of the metal properties when the metal is in sliding contact with a single-crystal abrasive grit of silicon carbide...

Method of producing p-i-n structures by compensation of lithium ions from both side of silicon

International Nuclear Information System (INIS)

Muminov, R.A.; Radjapov, S.A.; Saymbetov, A.K.; Tursunkulov, O.M.; Pindurin, Yu.S.

2007-01-01

Full text: Semiconductor nuclear radiation detectors are needed to solve certain problems in nuclear spectroscopy. The development of efficiency detectors became possible with advances in growing high purify silicon single crystals with the required properties, satisfying the requirements for obtaining detectors based on them. One important requirement for obtaining detectors with sensitive area is that its resistance must be high. This is achieved by using the lithium ion drift process in the volume of the semiconductor detector. Thus it has been developed and created silicon semiconductor nuclear radiation detectors with vide range of diameter of sensitive area up to 100 mm and thickness (from 1mm to 10mm). At present work a new method for producing p-i-n structures was developed to decrease substantially the time required for compensation of silicon by lithium ions and to eliminate at the same time the negative consequences of holding the crystal at a high temperature and under a high voltage. Drift of lithium ions from two ends of prepared samples is conducted to a depth sufficient for the required compensation of the initial acceptor impurity in silicon. The method described above was used to fabricate a batch of Si(Li) detectors with a 1-10 mm thick and 10-110 mm in diameter sensitive region. The thickness of the sensitive region was determined by performing standard measurements and chemical pigmentation. Advantages of detectors are they have improved properties and less time for compensation of lithium ions. (authors)

Frictional sliding tests on combined coal-rock samples

Directory of Open Access Journals (Sweden)

Tao Wang

2014-06-01

Full Text Available A test system was developed to understand the sliding mechanism of coal-rock structure. The test system was composed by a double-shear testing model and an acousto-optic monitoring system in association with a digital camera and an acoustic emission (AE instrument. The tests can simulate the movement of activated faults and the sliding in coal-rock structure. In this regard, instable sliding conditions of coal-rock samples, sliding types under different conditions, displacement evolution law, and AE characteristics during sliding process were investigated. Several sliding types were monitored in the tests, including unstable continuous sliding, unstable discontinuous sliding, and stable sliding. The sliding types have close relation with the axial loads and loading rates. Larger axial load and smaller loading rate mean that unstable sliding is less likely to occur. The peak shear stress was positively correlated with the axial load when sliding occurred, whereas the displacement induced by unstable sliding was uncorrelated with the axial load. A large number of AE events occurred before sliding, and the AE rate decreased after stable sliding. The results show that the tests can well simulate the process of structural instability in a coal bump, and are helpful in the understanding of fault activation and the physical processes during squeezing process of roof and floor.

Design and optimization of stress centralized MEMS vector hydrophone with high sensitivity at low frequency

Science.gov (United States)

Zhang, Guojun; Ding, Junwen; Xu, Wei; Liu, Yuan; Wang, Renxin; Han, Janjun; Bai, Bing; Xue, Chenyang; Liu, Jun; Zhang, Wendong

2018-05-01

A micro hydrophone based on piezoresistive effect, "MEMS vector hydrophone" was developed for acoustic detection application. To improve the sensitivity of MEMS vector hydrophone at low frequency, we reported a stress centralized MEMS vector hydrophone (SCVH) mainly used in 20-500 Hz. Stress concentration area was actualized in sensitive unit of hydrophone by silicon micromachining technology. Then piezoresistors were placed in stress concentration area for better mechanical response, thereby obtaining higher sensitivity. Static analysis was done to compare the mechanical response of three different sensitive microstructure: SCVH, conventional micro-silicon four-beam vector hydrophone (CFVH) and Lollipop-shaped vector hydrophone (LVH) respectively. And fluid-structure interaction (FSI) was used to analyze the natural frequency of SCVH for ensuring the measurable bandwidth. Eventually, the calibration experiment in standing wave field was done to test the property of SCVH and verify the accuracy of simulation. The results show that the sensitivity of SCVH has nearly increased by 17.2 dB in contrast to CFVH and 7.6 dB in contrast to LVH during 20-500 Hz.

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng; Yang, Yuan; Hsu, Ching-Mei; Cui, Yi

2009-01-01

We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires

High temperature dielectric function of silicon, germanium and GaN

Energy Technology Data Exchange (ETDEWEB)

Leyer, Martin; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin (Germany). Institut fuer Festkoerperphysik

2010-07-01

In the last few years accurate values for the optical properties of silicon, germanium and GaN at high temperatures have become important as a reference for in-situ analysis, e.g. reflectometry. Precise temperature dependent dielectric measurements are necessary for the growth of GaInP/GaInAs/Ge triple-junction solar cells and the hetero epitaxy of GaN on silicon and sapphire. We performed spectroscopic ellipsometry (SE) measurements of the dielectric function of silicon, germanium and GaN between 1.5 eV and 6.5 eV in the temperature range from 300 K to 1300 K. The Samples were deoxidized chemically or by heating. High resolution SE spectra were taken every 50 K while cooling down to room temperature. The temperature dependence of the critical energies is compared to literature. Measurements for germanium showed a shift of the E{sub 2} critical point of {proportional_to}0.1 eV toward lower energies. The reason for this behavior is a non-negligible oxide layer on the samples in the literature.

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

Science.gov (United States)

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

High sensitivity pH sensing on the BEOL of industrial FDSOI transistors

Science.gov (United States)

Rahhal, Lama; Ayele, Getenet Tesega; Monfray, Stéphane; Cloarec, Jean-Pierre; Fornacciari, Benjamin; Pardoux, Eric; Chevalier, Celine; Ecoffey, Serge; Drouin, Dominique; Morin, Pierre; Garnier, Philippe; Boeuf, Frederic; Souifi, Abdelkader

2017-08-01

In this work we demonstrate the use of Fully Depleted Silicon On Insulator (FDSOI) transistors as pH sensors with a 23 nm silicon nitride sensing layer built in the Back-End-Of-Line (BEOL). The back end process to deposit the sensing layer and fabricate the electrical structures needed for testing is detailed. A series of tests employing different pH buffer solutions has been performed on transistors of different geometries, controlled via the back gate. The main findings show a shift of the drain current (ID) as a function of the back gate voltage (VB) when different pH buffer solutions are probed in the range of pH 6 to pH 8. This shift is observed at VB voltages swept from 0 V to 3 V, demonstrating the sensor operation at low voltage. A high sensitivity of up to 250 mV/pH unit (more than 4-fold larger than Nernstian response) is observed on FDSOI MOS transistors of 0.06 μm gate length and 0.08 μm gate width. She is currently working as a Postdoctoral researcher at Institut des nanotechnologies de Lyon in collaboration with STMicroelectronics and Université de Sherbrook (Canada) working on ;Integration of ultra-low-power gas and pH sensors with advanced technologies;. Her research interest includes selection, machining, optimisation and electrical characterisation of the sensitive layer for a low power consumption gas sensor based on advanced MOS transistors.

Wear Characteristics of Hybrid Composites Based on Za27 Alloy Reinforced With Silicon Carbide and Graphite Particles

Directory of Open Access Journals (Sweden)

S. Mitrović

2014-06-01

Full Text Available The paper presents the wear characteristics of a hybrid composite based on zinc-aluminium ZA27 alloy, reinforced with silicon-carbide and graphite particles. The tested sample contains 5 vol.% of SiC and 3 vol.% Gr particles. Compocasting technique has been used to prepare the samples. The experiments were performed on a “block-on-disc” tribometer under conditions of dry sliding. The wear volumes of the alloy and the composite were determined by varying the normal loads and sliding speeds. The paper contains the procedure for preparation of sample composites and microstructure of the composite material and the base ZA27 alloy. The wear surface of the composite material was examined using the scanning electronic microscope (SEM and energy dispersive spectrometry (EDS. Conclusions were obtained based on the observed impact of the sliding speed, normal load and sliding distance on tribological behaviour of the observed composite.

Hierarchical columnar silicon anode structures for high energy density lithium sulfur batteries

Science.gov (United States)

Piwko, Markus; Kuntze, Thomas; Winkler, Sebastian; Straach, Steffen; Härtel, Paul; Althues, Holger; Kaskel, Stefan

2017-05-01

Silicon is a promising anode material for next generation lithium secondary batteries. To significantly increase the energy density of state of the art batteries with silicon, new concepts have to be developed and electrode structuring will become a key technology. Structuring is essential to reduce the macroscopic and microscopic electrode deformation, caused by the volume change during cycling. We report pulsed laser structuring for the generation of hierarchical columnar silicon films with outstanding high areal capacities up to 7.5 mAh cm-2 and good capacity retention. Unstructured columnar electrodes form a micron-sized block structure during the first cycle to compensate the volume expansion leading to macroscopic electrode deformation. At increased silicon loading, without additional structuring, pronounced distortion and the formation of cracks through the current collector causes cell failure. Pulsed laser ablation instead is demonstrated to avoid macroscopic electrode deformation by initial formation of the block structure. A full cell with lithiated silicon versus a carbon-sulfur cathode is assembled with only 15% overbalanced anode and low electrolyte amount (8 μl mgsulfur-1). While the capacity retention over 50 cycles is identical to a cell with high excess lithium anode, the volumetric energy density could be increased by 30%.

A silicon nanowire heater and thermometer

Science.gov (United States)

Zhao, Xingyan; Dan, Yaping

2017-07-01

In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

High breakdown-strength composites from liquid silicone rubbers

DEFF Research Database (Denmark)

Vudayagiri, Sindhu; Zakaria, Shamsul Bin; Yu, Liyun

2014-01-01

In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially...

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

A novel high resolution, high sensitivity SPECT detector for molecular imaging of cardiovascular diseases

Science.gov (United States)

Cusanno, F.; Argentieri, A.; Baiocchi, M.; Colilli, S.; Cisbani, E.; De Vincentis, G.; Fratoni, R.; Garibaldi, F.; Giuliani, F.; Gricia, M.; Lucentini, M.; Magliozzi, M. L.; Majewski, S.; Marano, G.; Musico, P.; Musumeci, M.; Santavenere, F.; Torrioli, S.; Tsui, B. M. W.; Vitelli, L.; Wang, Y.

2010-05-01

Cardiovascular diseases are the most common cause of death in western countries. Understanding the rupture of vulnerable atherosclerotic plaques and monitoring the effect of innovative therapies of heart failure is of fundamental importance. A flexible, high resolution, high sensitivity detector system for molecular imaging with radionuclides on small animal models has been designed for this aim. A prototype has been built using tungsten pinhole and LaBr3(Ce) scintillator coupled to Hamamatsu Flat Panel PMTs. Compact individual-channel readout has been designed, built and tested. Measurements with phantoms as well as pilot studies on mice have been performed, the results show that the myocardial perfusion in mice can be determined with sufficient precision. The detector will be improved replacing the Hamamatsu Flat Panel with Silicon Photomultipliers (SiPMs) to allow integration of the system with MRI scanners. Application of LaBr3(Ce) scintillator coupled to photosensor with high photon detection efficiency and excellent energy resolution will allow dual-label imaging to monitor simultaneously the cardiac perfusion and the molecular targets under investigation during the heart therapy.

Challenges and solutions for high-volume testing of silicon photonics

Science.gov (United States)

Polster, Robert; Dai, Liang Yuan; Oikonomou, Michail; Cheng, Qixiang; Rumley, Sebastien; Bergman, Keren

2018-02-01

The first generation of silicon photonic products is now commercially available. While silicon photonics possesses key economic advantages over classical photonic platforms, it has yet to become a commercial success because these advantages can be fully realized only when high-volume testing of silicon photonic devices is made possible. We discuss the costs, challenges, and solutions of photonic chip testing as reported in the recent research literature. We define and propose three underlying paradigms that should be considered when creating photonic test structures: Design for Fast Coupling, Design for Minimal Taps, and Design for Parallel Testing. We underline that a coherent test methodology must be established prior to the design of test structures, and demonstrate how an optimized methodology dramatically reduces the burden when designing for test, by reducing the needed complexity of test structures.

Fundamental understanding and development of low-cost, high-efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

2000-05-01

The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

Scaling of black silicon processing time by high repetition rate femtosecond lasers

Directory of Open Access Journals (Sweden)

Nava Giorgio

2013-11-01

Full Text Available Surface texturing of silicon substrates is performed by femtosecond laser irradiation at high repetition rates. Various fabrication parameters are optimized in order to achieve very high absorptance in the visible region from the micro-structured silicon wafer as compared to the unstructured one. A 70-fold reduction of the processing time is demonstrated by increasing the laser repetition rate from 1 kHz to 200 kHz. Further scaling up to 1 MHz can be foreseen.

High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation)

DEFF Research Database (Denmark)

Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Hirori, Hideki

2017-01-01

Summary form only given. Metallic antenna arrays fabricated on high resistivity silicon are used to localize and enhance the incident THz field resulting in high electric field pulses with peak electric field strength reaching several MV/cm on the silicon surface near the antenna tips. In such high...... electric field strengths high density of carriers are generated in silicon through impact ionization process. The high density of generated carriers induces a change of refractive index in silicon. By measuring the change of reflectivity of tightly focused 800 nm light, the local density of free carriers...... near the antenna tips is measured. Using the NIR probing technique, we observed that the density of carriers increases by over 8 orders of magnitude in a time duration of approximately 500 fs with an incident THz pulse of peak electric field strength 700 kV/cm. This shows that a single impact...

Mechanics of slide dams

International Nuclear Information System (INIS)

Young, G.A.

1970-01-01

Studies which promote the use of nuclear energy for peaceful projects in engineering are sponsored by the Atomic Energy Commission under the Plowshare program. Specific projects being considered include the construction of harbors, canals, and dams. Of these projects, perhaps the most difficult to accomplish will be the latter. This paper which is in two parts considers the problems which are associated with the construction of slide dams with nuclear explosives. It examines first the characteristics of conventional earth and rock-fill dams which are based upon proven techniques developed after many years of experience. The characteristics of natural landslide dams are also briefly considered to identify potential problems that must be overcome by slide dam construction techniques. Second, the mechanics of slide dams as determined from small-scale laboratory studies are presented. It is concluded that slide dams can be constructed and that small-scale field tests and additional laboratory studies are justified. (author)

Mechanics of slide dams

Energy Technology Data Exchange (ETDEWEB)

Young, G A [Engineering, Agbabian-Jacobsen Associates, Los Angeles (United States)

1970-05-15

Studies which promote the use of nuclear energy for peaceful projects in engineering are sponsored by the Atomic Energy Commission under the Plowshare program. Specific projects being considered include the construction of harbors, canals, and dams. Of these projects, perhaps the most difficult to accomplish will be the latter. This paper which is in two parts considers the problems which are associated with the construction of slide dams with nuclear explosives. It examines first the characteristics of conventional earth and rock-fill dams which are based upon proven techniques developed after many years of experience. The characteristics of natural landslide dams are also briefly considered to identify potential problems that must be overcome by slide dam construction techniques. Second, the mechanics of slide dams as determined from small-scale laboratory studies are presented. It is concluded that slide dams can be constructed and that small-scale field tests and additional laboratory studies are justified. (author)

Second-order sliding mode control for DFIG-based wind turbines fault ride-through capability enhancement.

Science.gov (United States)

Benbouzid, Mohamed; Beltran, Brice; Amirat, Yassine; Yao, Gang; Han, Jingang; Mangel, Hervé

2014-05-01

This paper deals with the fault ride-through capability assessment of a doubly fed induction generator-based wind turbine using a high-order sliding mode control. Indeed, it has been recently suggested that sliding mode control is a solution of choice to the fault ride-through problem. In this context, this paper proposes a second-order sliding mode as an improved solution that handle the classical sliding mode chattering problem. Indeed, the main and attractive features of high-order sliding modes are robustness against external disturbances, the grids faults in particular, and chattering-free behavior (no extra mechanical stress on the wind turbine drive train). Simulations using the NREL FAST code on a 1.5-MW wind turbine are carried out to evaluate ride-through performance of the proposed high-order sliding mode control strategy in case of grid frequency variations and unbalanced voltage sags. Copyright © 2014 ISA. Published by Elsevier Ltd. All rights reserved.

Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

Energy Technology Data Exchange (ETDEWEB)

Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

2006-09-04

We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

International Nuclear Information System (INIS)

Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

2006-01-01

We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

Fabrication of a novel silicon single electron transistor for Si:P quantum computer devices

International Nuclear Information System (INIS)

Angus, S.J.; Smith, C.E.A.; Gauja, E.; Dzurak, A.S.; Clark, R.G.; Snider, G.L.

2004-01-01

Full text: Quantum computation relies on the successful measurement of quantum states. Single electron transistors (SETs) are known to be able to perform fast and sensitive charge measurements of solid state qubits. However, due to their sensitivity, SETs are also very susceptible to random charge fluctuations in a solid-state materials environment. In previous dc transport measurements, silicon-based SETs have demonstrated greater charge stability than A1/A1 2 O 3 SETs. We have designed and fabricated a novel silicon SET architecture for a comparison of the noise characteristics of silicon and aluminium based devices. The silicon SET described here is designed for controllable and reproducible low temperature operation. It is fabricated using a novel dual gate structure on a silicon-on-insulator substrate. A silicon quantum wire is formed in a 100nm thick high-resistivity superficial silicon layer using reactive ion etching. Carriers are induced in the silicon wire by a back gate in the silicon substrate. The tunnel barriers are created electrostatically, using lithographically defined metallic electrodes (∼40nm width). These tunnel barriers surround the surface of the quantum wire, thus producing excellent electrostatic confinement. This architecture provides independent control of tunnel barrier height and island occupancy, thus promising better control of Coulomb blockade oscillations than in previously investigated silicon SETs. The use of a near intrinsic silicon substrate offers compatibility with Si:P qubits in the longer term

Porous silicon: Synthesis and optical properties

International Nuclear Information System (INIS)

Naddaf, M.; Awad, F.

2006-01-01

Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

Porous silicon: Synthesis and optical properties

International Nuclear Information System (INIS)

Naddaf, M.; Awad, F.

2006-06-01

Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

The mid-IR silicon photonics sensor platform (Conference Presentation)

Science.gov (United States)

Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

2017-02-01

Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

International Nuclear Information System (INIS)

Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

2004-01-01

Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

Research on Synthetic Aperture Radar Processing for the Spaceborne Sliding Spotlight Mode.

Science.gov (United States)

Shen, Shijian; Nie, Xin; Zhang, Xinggan

2018-02-03

Gaofen-3 (GF-3) is China' first C-band multi-polarization synthetic aperture radar (SAR) satellite, which also provides the sliding spotlight mode for the first time. Sliding-spotlight mode is a novel mode to realize imaging with not only high resolution, but also wide swath. Several key technologies for sliding spotlight mode in spaceborne SAR with high resolution are investigated in this paper, mainly including the imaging parameters, the methods of velocity estimation and ambiguity elimination, and the imaging algorithms. Based on the chosen Convolution BackProjection (CBP) and PFA (Polar Format Algorithm) imaging algorithms, a fast implementation method of CBP and a modified PFA method suitable for sliding spotlight mode are proposed, and the processing flows are derived in detail. Finally, the algorithms are validated by simulations and measured data.

Research on Synthetic Aperture Radar Processing for the Spaceborne Sliding Spotlight Mode

Directory of Open Access Journals (Sweden)

Shijian Shen

2018-02-01

Full Text Available Gaofen-3 (GF-3 is China’ first C-band multi-polarization synthetic aperture radar (SAR satellite, which also provides the sliding spotlight mode for the first time. Sliding-spotlight mode is a novel mode to realize imaging with not only high resolution, but also wide swath. Several key technologies for sliding spotlight mode in spaceborne SAR with high resolution are investigated in this paper, mainly including the imaging parameters, the methods of velocity estimation and ambiguity elimination, and the imaging algorithms. Based on the chosen Convolution BackProjection (CBP and PFA (Polar Format Algorithm imaging algorithms, a fast implementation method of CBP and a modified PFA method suitable for sliding spotlight mode are proposed, and the processing flows are derived in detail. Finally, the algorithms are validated by simulations and measured data.

Dielectric elastomers, with very high dielectric permittivity, based on silicone and ionic interpenetrating networks

DEFF Research Database (Denmark)

Yu, Liyun; Madsen, Frederikke Bahrt; Hvilsted, Søren

2015-01-01

permittivity and the Young's modulus of the elastomer. One system that potentially achieves this involves interpenetrating polymer networks (IPNs), based on commercial silicone elastomers and ionic networks from amino- and carboxylic acid-functional silicones. The applicability of these materials as DEs...... are obtained while dielectric breakdown strength and Young's modulus are not compromised. These good overall properties stem from the softening effect and very high permittivity of ionic networks – as high as ε′ = 7500 at 0.1 Hz – while the silicone elastomer part of the IPN provides mechanical integrity...

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped silicon

International Nuclear Information System (INIS)

Tokuda, Yutaka; Inoue, Yajiro; Usami, Akira

1987-01-01

Defects in high-resistivity neutron-transmutation-doped (NTD) silicon prior to annealing were studied by photo-induced current transient spectroscopy (PICTS). The thermal-neutron fluence was 9.5 x 10 17 cm -2 to give a resistivity of about 30 Ω after annealing, and the fast-neutron fluence was 9.5 x 10 16 cm -2 . Four traps with thermal emission activation energies of 0.15, 0.41. 0.47 and 0.50 eV were observed in NTD silicon. A trap with the thermal emission activation energy of 0.15 eV was considered to correspond to the divacancy. Although the clustered nature of the defects was observed, PICTS measurements suggest that the material state of high-resistivity NTD silicon is still crystalline and not amorphous. (author)

Development of Silicon Sensor Characterization System for Future High Energy Physics Experiments

OpenAIRE

Preeti kumari; Kavita Lalwani; Ranjeet Dalal; Geetika Jain; Ashutosh Bhardwaj; Kirti Ranjan

2015-01-01

The Compact Muon Solenoid (CMS) is one of the general purpose experiments at the Large Hadron Collider (LHC), CERN and has its Tracker built of all silicon strip and pixel sensors. Si sensors are expected to play extremely important role in the upgrades of the existing Tracker for future high luminosity environment and will also be used in future lepton colliders. However, properties of the silicon sensors have to be carefully understood before they can be put in the extremely high luminos...

A 1024 pad silicon detector to solve tracking ambiguities in high multiplicity events

International Nuclear Information System (INIS)

Simone, S.; Catanesi, M.G.; Di Bari, D.; Didonna, V.; Elia, D.; Ghidini, B.; Lenti, V.; Manzari, V.; Nappi, E.

1996-01-01

Silicon detectors with two-dimensional pad readout have been designed and constructed for the WA97 experiment at CERN, in order to solve ambiguities for track reconstruction in a silicon microstrip telescope. A high density fanouts has been developed on a glass support to allow the electrical contacts between the detector and the front end electronics. Silicon pad detectors have been successfully operated both during the proton-Pb and Pb-Pb runs of the WA97 experiment. (orig.)

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Single-crystal silicon trench etching for fabrication of highly integrated circuits

Science.gov (United States)

Engelhardt, Manfred

1991-03-01

The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

Identification of mycobacterium tuberculosis in sputum smear slide using automatic scanning microscope

Science.gov (United States)

Rulaningtyas, Riries; Suksmono, Andriyan B.; Mengko, Tati L. R.; Saptawati, Putri

2015-04-01

Sputum smear observation has an important role in tuberculosis (TB) disease diagnosis, because it needs accurate identification to avoid high errors diagnosis. In development countries, sputum smear slide observation is commonly done with conventional light microscope from Ziehl-Neelsen stained tissue and it doesn't need high cost to maintain the microscope. The clinicians do manual screening process for sputum smear slide which is time consuming and needs highly training to detect the presence of TB bacilli (mycobacterium tuberculosis) accurately, especially for negative slide and slide with less number of TB bacilli. For helping the clinicians, we propose automatic scanning microscope with automatic identification of TB bacilli. The designed system modified the field movement of light microscope with stepper motor which was controlled by microcontroller. Every sputum smear field was captured by camera. After that some image processing techniques were done for the sputum smear images. The color threshold was used for background subtraction with hue canal in HSV color space. Sobel edge detection algorithm was used for TB bacilli image segmentation. We used feature extraction based on shape for bacilli analyzing and then neural network classified TB bacilli or not. The results indicated identification of TB bacilli that we have done worked well and detected TB bacilli accurately in sputum smear slide with normal staining, but not worked well in over staining and less staining tissue slide. However, overall the designed system can help the clinicians in sputum smear observation becomes more easily.

Silicon nanomaterials platform for bioimaging, biosensing, and cancer therapy.

Science.gov (United States)

Peng, Fei; Su, Yuanyuan; Zhong, Yiling; Fan, Chunhai; Lee, Shuit-Tong; He, Yao

2014-02-18

biomedical applications, including biosensor, bioimaging, and cancer therapy. First, we show that the interesting photoluminescence properties (e.g., strong fluorescence and robust photostability) and excellent biocompatibility of silicon nanoparticles (SiNPs) are superbly suitable for direct and long-term visualization of biological systems. The strongly fluorescent SiNPs are highly effective for bioimaging applications, especially for long-term cellular labeling, cancer cell detection, and tumor imaging in vitro and in vivo with high sensitivity. Next, we discuss the utilization of silicon nanomaterials to construct high-performance biosensors, such as silicon-based field-effect transistors (FET) and surface-enhanced Raman scattering (SERS) sensors, which hold great promise for ultrasensitive and selective detection of biological species (e.g., DNA and protein). Then, we introduce recent exciting research findings on the applications of silicon nanomaterials for cancer therapy with encouraging therapeutic outcomes. Lastly, we highlight the major challenges and promises in this field, and the prospect of a new nanobiotechnology platform based on silicon nanomaterials.

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

Science.gov (United States)

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

High yield silicon carbide prepolymers

International Nuclear Information System (INIS)

Baney, R.H.

1982-01-01

Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

Mesoporous Silicon-Based Anodes for High Capacity, High Performance Li-ion Batteries, Phase I