Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

Science.gov (United States)

Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

2017-12-01

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

Amber light-emitting diode comprising a group III-nitride nanowire active region

Science.gov (United States)

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Enhanced non-radiative energy transfer in hybrid III-nitride structures

International Nuclear Information System (INIS)

Smith, R. M.; Athanasiou, M.; Bai, J.; Liu, B.; Wang, T.

2015-01-01

The effect of surface states has been investigated in hybrid organic/inorganic white light emitting structures that employ high efficiency, nearfield non-radiative energy transfer (NRET) coupling. The structures utilize blue emitting InGaN/GaN multiple quantum well (MQW) nanorod arrays to minimize the separation with a yellow emitting F8BT coating. Surface states due to the exposed III-nitride surfaces of the nanostructures are found to reduce the NRET coupling rate. The surface states are passivated by deposition of a silicon nitride layer on the III-nitride nanorod surface leading to reduced surface recombination. A low thickness surface passivation is shown to increase the NRET coupling rate by 4 times compared to an un-passivated hybrid structure. A model is proposed to explain the increased NRET rate for the passivated hybrid structures based on the reduction in surface electron depletion of the passivated InGaN/GaN MQW nanorods surfaces

III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions

KAUST Repository

Mishra, Pawan

2017-04-01

Group III-nitride materials have attracted great attention for applications in high efficiency electronic and optoelectronics devices such as high electron mobility transistors, light emitting diodes, and laser diodes. On the other hand, group VI transition metal dichalcogenides (TMDs) in the form of MX2 has recently emerged as a novel atomic layered material system with excellent thermoelectric, electronic and optoelectronic properties. Also, the recent investigations reveal that the dissimilar heterojunctions formed by TMDs and III-nitrides provide the route for novel devices in the area of optoelectronic, electronics, and water splitting applications. In addition, integration of III-nitrides and TMDs will enable high density integrated optoelectronic circuits and the development of hybrid integration technologies. In this work, we have demonstrated kinetically controlled growth processes in plasma assisted molecular beam epitaxy (PAMBE) for the III-nitrides and their engineered heterostructures. Techniques such as Ga irradiation and nitrogen plasma exposure has been utilized to implement bulk GaN, InGaN and their heterostructures in PAMBE. For the growth of III-nitride based heterostructures, the in-situ surface stoichiometry monitoring (i-SSM) technique was developed and used for implementing stepped and compositionally graded InGaN-based multiple quantum wells (MQWs). Their optical and microstrain analysis in conjunction with theoretical studies confirmed improvement in the radiative recombination rate of the graded-MQWs as compared to that of stepped-MQWs, owing to the reduced strain in graded-MQWs. Our achievement also includes the realization of the p-type MoS2 by engineering pristine MoS2 layers in PAMBE. Mainly, Ga and nitrogen plasma irradiation on the pristine MoS2 in PAMBE has resulted in the realization of the p-type MoS2. Also, GaN epitaxial thin layers were deposited on MoS2/c-sapphire, WSe2/c-sapphire substrates by PAMBE to study the band

Enhanced thermaly managed packaging for III-nitride light emitters

Science.gov (United States)

Kudsieh, Nicolas

In this Dissertation our work on `enhanced thermally managed packaging of high power semiconductor light sources for solid state lighting (SSL)' is presented. The motivation of this research and development is to design thermally high stable cost-efficient packaging of single and multi-chip arrays of III-nitrides wide bandgap semiconductor light sources through mathematical modeling and simulations. Major issues linked with this technology are device overheating which causes serious degradation in their illumination intensity and decrease in the lifetime. In the introduction the basics of III-nitrides WBG semiconductor light emitters are presented along with necessary thermal management of high power cingulated and multi-chip LEDs and laser diodes. This work starts at chip level followed by its extension to fully packaged lighting modules and devices. Different III-nitride structures of multi-quantum well InGaN/GaN and AlGaN/GaN based LEDs and LDs were analyzed using advanced modeling and simulation for different packaging designs and high thermal conductivity materials. Study started with basic surface mounted devices using conventional packaging strategies and was concluded with the latest thermal management of chip-on-plate (COP) method. Newly discovered high thermal conductivity materials have also been incorporated for this work. Our study also presents the new approach of 2D heat spreaders using such materials for SSL and micro LED array packaging. Most of the work has been presented in international conferences proceedings and peer review journals. Some of the latest work has also been submitted to well reputed international journals which are currently been reviewed for publication. .

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

KAUST Repository

Muhammed, Mufasila Mumthaz

2018-03-11

III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique properties that combine high transparency and conductivity, is used for the first time in the development of high-quality vertical III-nitride devices, which can be cost-effective for large-scale production. In addition, hybridizing GaN with emerging materials, mainly perovskite, is shown to extend the functionality of III-nitride applications. As a part of this investigation, high-performance and high-responsivity fast perovskite/GaN-based UV-visible broadband photodetectors were developed. State-of-the-art GaN epilayers grown on (-201)-oriented β-Ga2O3 using AlN and GaN buffer layers are discussed, and their high optical quality without using growth enhancement techniques is demonstrated. In particular, a low lattice mismatch (⁓4.7%) between GaN and the substrate results in a low density of dislocations ~4.8Å~107 cm−2. To demonstrates the effect of (-201)-oriented β-Ga2O3 substrate on the quality of III-nitride alloys, high-quality ternary alloy InxGa1−xN film is studied, followed by the growth of high quality InxGa1−xN/GaN single and multiple quantum wells (QWs). The optical characterization and carrier dynamics by photoluminescence (PL) and time-resolved PL measurements were subsequently performed. Lastly, to investigate the performance of a vertical emitting device based on InGaN/GaN multiple QWs grown on (-201)-oriented β-Ga2O3 substrate, high-efficiency vertical-injection emitting device is developed and extensively investigated. The conductive nature of

Methods for improved growth of group III nitride buffer layers

Science.gov (United States)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

2014-07-15

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths

Science.gov (United States)

Emani, Naresh Kumar; Khaidarov, Egor; Paniagua-Domínguez, Ramón; Fu, Yuan Hsing; Valuckas, Vytautas; Lu, Shunpeng; Zhang, Xueliang; Tan, Swee Tiam; Demir, Hilmi Volkan; Kuznetsov, Arseniy I.

2017-11-01

The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430-470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.

Photoelectrochemistry of III-V epitaxial layers and nanowires for solar energy conversion

Science.gov (United States)

Parameshwaran, Vijay; Enck, Ryan; Chung, Roy; Kelley, Stephen; Sampath, Anand; Reed, Meredith; Xu, Xiaoqing; Clemens, Bruce

2017-05-01

III-V materials, which exhibit high absorption coefficients and charge carrier mobility, are ideal templates for solar energy conversion applications. This work describes the photoelectrochemistry research in several IIIV/electrolyte junctions as an enabler for device design for solar chemical reactions. By designing lattice-matched epitaxial growth of InGaP and GaP on GaAs and Si, respectively, extended depletion region electrodes achieve photovoltages which provide an additional boost to the underlying substrate photovoltage. The InGaP/GaAs and GaP/Si electrodes drive hydrogen evolution currents under aqueous conditions. By using nanowires of InN and InP under carefully controlled growth conditions, current and capacitance measurements are obtained to reveal the nature of the nanowire-electrolyte interface and how light is translated into photocurrent for InP and a photovoltage in InN. The materials system is expanded into the III-V nitride semiconductors, in which it is shown that varying the morphology of GaN on silicon yields insights to how the interface and light conversion is modulated as a basis for future designs. Current extensions of this work address growth and tuning of the III-V nitride electrodes with doping and polarization engineering for efficient coupling to solar-driven chemical reactions, and rapid-throughput methods for III-V nanomaterials synthesis in this materials space.

Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks

International Nuclear Information System (INIS)

Calleja, E.; Ristic, J.; Fernandez-Garrido, S.; Sanchez-Garcia, M.A.; Grandal, J.; Cerutti, L.; Trampert, A.; Jahn, U.; Sanchez, G.; Griol, A.; Sanchez, B.

2007-01-01

The growth conditions to achieve group-III-nitride nanocolumns and nanocolumnar heterostructures by plasma-assisted molecular beam epitaxy are studied. The evolution of the nanocolumnar morphology with the growth conditions is determined for (Ga,Al)N and (In,Ga)N nanocolumns. The mechanisms behind the nanocolumnar growth under high N-rich conditions are clarified in the sense that no seeding or catalysts are required, as it is the case in the vapour-liquid-solid model that applies to most nanocolumns grown by metal organic chemical vapour deposition, either with group-III nitrides, II-VI or III-V compounds. Some examples of nanocolumnar heterostructures are given, like quantum disks and cylindrical nanocavities. Preliminary results on the growth of arrays of ordered GaN nanocolumns are reported. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

Science.gov (United States)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

Ion implantation and annealing studies in III-V nitrides

International Nuclear Information System (INIS)

Zolper, J.C.; Pearton, S.J.

1996-01-01

Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n + -surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10 16 cm -2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

III-Nitride Membranes for Thermal Bio-Sensing and Solar Hydrogen Generation

KAUST Repository

Elafandy, Rami Tarek Mahmoud

2017-09-01

III-nitride nanostructures have generated tremendous scientific and technological interests in studying and engineering their low dimensional physics phenomena. Among these, 2D planar, free standing III-nitride nanomembranes are unrivalled in their scalability for high yield manufacture and can be mechanically manipulated. Due to the increase in their surface to volume ratio and the manifestation of quantum phenomena, these nanomembranes acquire unique physical properties. Furthermore, III-nitride membranes are chemically stable and biocompatible. Finally, nanomembranes are highly flexible and can follow curvilinear surfaces present in biological systems. However, being free-standing, requires especially new techniques for handling nanometers or micrometers thick membrane devices. Furthermore, effectively transferring these membrane devices to other substrates is not a direct process which requires the use of photoresists, solvents and/or elastomers. Finally, as the membranes are transferred, they need to be properly attached for subsequent device fabrications, which often includes spin coating and rinsing steps. These engineering complications have impeded the development of novel devices based on III-nitride membranes. In this thesis, we demonstrate the versatility of III-nitride membranes where we develop a thermal bio-sensor nanomembrane and solar energy photo-anode membrane. First, we present a novel preparation technique of nanomembranes with new characteristics; having no threading dislocation cores. We then perform optical characterization to reveal changes in their defect densities compared to the bulk crystal. We also study their mechanical properties where we successfully modulate their bandgap emission by 55 meV through various external compressive and tensile strain fields. Furthermore, we characterize the effect of phonon-boundary scattering on their thermal properties where we report a reduction of thermal conductivity from 130 to 9 W/mK. We employ

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Songrui Zhao

2017-09-01

Full Text Available p-Type doping represents a key step towards III-nitride (InN, GaN, AlN optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE-grown p-type InN and AlN—two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

The role of In in III-nitride ternary semiconductors

CERN Multimedia

Redondo cubero, A

This proposal aims to study the role of In in the outstanding efficiency of luminescent devices based on group III-nitride ternary semiconductors. To study the microscopic environments of In in GaInN and AlInN, Perturbed Angular Correlation (PAC) experiments will be performed using the PAC-probes $^{111m}$Cd($^{111}$Cd), $^{115}$Cd($^{115}$In) and $^{117}$Cd($^{117}$In). Temperature dependent PAC measurements using the $^{111}$In($^{111}$Cd) probe indicated that In in GaN and AlN forms a complex with a defect, possibly a nitrogen vacancy (V$_{N}$), which is stable up to high temperatures and might be involved in the luminescence mechanisms. Analysing these results two questions arose: \\\\ \\\\1. Does the fact that the actual measurement is performed with the daughter nucleus $^{111}$Cd (being an acceptor) influence the probe-defect interaction? This question can be answered by performing measurements with the complementary probe $^{117}$Cd($^{117}$In). \\\\ \\\\ 2. What is the significance of $\\textit{a...

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-04-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

III-nitrides on oxygen- and zinc-face ZnO substrates

International Nuclear Information System (INIS)

Namkoong, Gon; Burnham, Shawn; Lee, Kyoung-Keun; Trybus, Elaissa; Doolittle, W. Alan; Losurdo, Maria; Capezzuto, Pio; Bruno, Giovanni; Nemeth, Bill; Nause, Jeff

2005-01-01

The characteristics of III-nitrides grown on zinc- and oxygen-face ZnO by plasma-assisted molecular beam epitaxy were investigated. The reflection high-energy electron diffraction pattern indicates formation of a cubic phase at the interface between III-nitride and both Zn- and O-face ZnO. The polarity indicates that Zn-face ZnO leads to a single polarity, while O-face ZnO forms mixed polarity of III-nitrides. Furthermore, by using a vicinal ZnO substrate, the terrace-step growth of GaN was realized with a reduction by two orders of magnitude in the dislocation-related etch pit density to ∼10 8 cm -2 , while a dislocation density of ∼10 10 cm -2 was obtained on the on-axis ZnO substrates

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

KAUST Repository

Leonard, J. T.

2016-03-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

KAUST Repository

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, Chao; Margalith, T.; Ng, Tien Khee; Denbaars, S. P.; Ooi, Boon S.; Speck, J. S.; Nakamura, S.

2016-01-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

Anomalous microstructural changes in III-nitrides under ion bombardment

International Nuclear Information System (INIS)

Kucheyev, S.O.; Williams, J.S.; Jagadish, C.

2002-01-01

Full text: Group-III nitrides (GaN, AlGaN, and InGaN) are currently a 'hot topic' in the physics and material research community due to very important technological applications of these materials in (opto)electronics. In the fabrication of III-nitride-based devices, ion bombardment represents a very attractive processing tool. However, ion-beam-produced lattice disorder and its undesirable consequences limit technological applications of ion implantation. Hence, studies of ion-beam-damage processes in Ill-nitrides are not only physically interesting but also technologically important. In this study, wurtzite GaN, AlGaN, and InGaN films exposed to ion bombardment under a wide range of irradiation conditions are studied by a combination of transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), energy dispersive x-ray spectrometry (EDS), atomic force microscopy (AFM), cathodoluminescence (CL), and Rutherford backscattering/channeling (RBS/C) spectrometry. Results show that, unlike the situation for mature semiconductors such as Si and GaAs, Ill-nitrides exhibit a range of intriguing behavior involving extreme microstructural changes under ion bombardment. In this presentation, the following aspects are discussed: (i) formation of lattice defects during ion bombardment, (ii) ion-beam-induced phase transformations, (iii) ion-beam-produced stoichiometric imbalance and associated material decomposition, and (iv) an application of charging phenomena during ESEM imaging for studies of electrical isolation in GaN by MeV light ion irradiation. Emphasis is given to the (powerful) application of electron microscopy techniques for the understanding of physical processes occurring in Ill-nitrides under ion bombardment. Copyright (2002) Australian Society for Electron Microscopy Inc

Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density

Science.gov (United States)

Li, Kexin; Rakheja, Shaloo

2017-02-01

In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

Effect of III-nitride polarization on V{sub OC} in p-i-n and MQW solar cells

Energy Technology Data Exchange (ETDEWEB)

Namkoong, Gon; Boland, Patrick; Foe, Kurniawan; Latimer, Kevin [Department of Electrical and Computer Engineering, Old Dominion University, Applied Research Center, 12050 Jefferson Avenue, Newport News, VA 23606 (United States); Bae, Si-Young; Shim, Jae-Phil; Lee, Dong-Seon [School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Korea, Republic of); Jeon, Seong-Ran [Korea Photonics Technology Institute, 971-35, Wolchul-dong, Buk-gu, Gwangju, 500-779 (Korea, Republic of); Doolittle, W. Alan [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)

2011-02-15

We performed detailed studies of the effect of polarization on III-nitride solar cells. Spontaneous and piezoelectric polarizations were assessed to determine their impacts upon the open circuit voltages (V{sub OC}) in p-i(InGaN)-n and multi-quantum well (MQW) solar cells. We found that the spontaneous polarization in Ga-polar p-i-n solar cells strongly modifies energy band structures and corresponding electric fields in a way that degrades V{sub OC} compared to non-polar p-i-n structures. In contrast, we found that piezoelectric polarization in Ga-polar MQW structures does not have a large influence on V{sub OC} compared to non-polar MQW structures. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Progress in Group III nitride semiconductor electronic devices

International Nuclear Information System (INIS)

Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

2012-01-01

Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

Science.gov (United States)

Singh, Rajwinder

Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

Suspended HfO2 photonic crystal slab on III-nitride/Si platform

International Nuclear Information System (INIS)

Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

2014-01-01

We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

International Nuclear Information System (INIS)

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

2005-01-01

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO 3 ) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000 deg. C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO 3 , producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN/GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO 3 modulators on compact optoelectronic/electronic chips

Photon confinement in high-efficiency, thin-film III-V solar cells obtained by epitaxial lift-off

International Nuclear Information System (INIS)

Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Deelen, J. van; Niftrik, A.T.J. van; Larsen, P.K.

2006-01-01

Using the epitaxial lift-off (ELO) technique, a III-V device structure can be separated from its GaAs substrate by selective wet etching of a thin release layer. The thin-film structures obtained by the ELO process can be cemented or van der Waals bonded on arbitrary smooth surface carriers for further processing. It is shown that the ELO method, initially able to separate millimetre-sized GaAs layers with a lateral etch rate of about 1 mm/h, has been developed to a process capable to free the entire 2-in. epitaxial structures from their substrates with etch rates up to 30 mm/h. With these characteristics the method has a large potential for the production of high efficiency thin-film solar cells. By choosing the right deposition and ELO strategy, the thin-film III-V cells can be adequately processed on both sides allowing for an entire range of new cell structures. In the present work, the performance of semi-transparent bifacial solar cells, produced by the deposition of metal grid contacts on both sides, was evaluated. Reflection of light at the rear side of the bifacial GaAs solar cells was found to result in an enhanced collection probability of the photon-induced carriers compared to that of regular III-V cells on a GaAs substrate. To enhance this effect, thin-film GaAs cells with gold mirror back contacts were prepared. Even in their present premature stage of development, these single-junction thin-film cells reached a record efficiency of 24.5% which is already very close to the 24.9% efficiency that was obtained with a regular GaAs cell on a GaAs substrate. From this it could be concluded that, as a result of the photon confinement, ELO cells require a significantly thinner base layer than regular GaAs cells while at the same time they have the potential to reach a higher efficiency

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

International Nuclear Information System (INIS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

2015-01-01

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J th ) of ∼3.5 kA/cm 2 , compared to the ITO VCSEL J th of 8 kA/cm 2 . The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

Energy Technology Data Exchange (ETDEWEB)

Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2015-08-31

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991

Energy Technology Data Exchange (ETDEWEB)

Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O`Bradovich, G.J.; Young, M.P. [Purdue Univ., Lafayette, IN (United States)

1993-01-01

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

Science.gov (United States)

Megalini, Ludovico

Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

International Nuclear Information System (INIS)

Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

2008-01-01

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Ringel, Steven [The Ohio State Univ., Columbus, OH (United States); Carlin, John A [The Ohio State Univ., Columbus, OH (United States); Grassman, Tyler [The Ohio State Univ., Columbus, OH (United States)

2018-04-17

This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

Science.gov (United States)

Li, Kexin; Rakheja, Shaloo

2018-05-01

We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

KAUST Repository

El Afandy, Rami

2011-07-07

Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

Spin-State-Controlled Photodissociation of Iron(III) Azide to an Iron(V) Nitride Complex

Czech Academy of Sciences Publication Activity Database

Andris, E.; Navrátil, R.; Jašík, J.; Sabenya, G.; Costas, M.; Srnec, Martin; Roithová, J.

2017-01-01

Roč. 56, č. 45 (2017), s. 14057-14060 ISSN 1521-3773 Institutional support: RVO:61388955 Keywords : Ion spectroscopy * Iron(V) nitride * Photodissociation Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry

Mobility in n-doped wurtzite III-Nitrides

Directory of Open Access Journals (Sweden)

C.G. Rodrigues

2003-01-01

Full Text Available A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems driven far away from equilibrium by a strong electric field in the steady state, which follows after a very fast transient. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample on the electric field strength is derived, which decreases with the strength of electric field. We analyzed the contributions to the mobility arising out of the different channels of electron scattering, namely, the polar optic, deformation, piezoelectric, interactions with the phonons, and with impurities. The case of n-InN, n-GaN, and n-AlN have been analyzed: as expected the main contribution comes from the polar-optic interactions in these strongly polar semiconductors. The other interactions are in decreasing order, the deformation acoustic, the piezoelectric, and the one due to impurities.

Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

KAUST Repository

Myzaferi, A.

2016-08-11

The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

Polarity Control in Group-III Nitrides beyond Pragmatism

Science.gov (United States)

Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni; Kirste, Ronny; Hoffmann, Marc P.; Collazo, Ramón; Courville, Aimeric; Di Felice, Rosa; Sitar, Zlatko; Vennéguès, Philippe; Albrecht, Martin

2016-05-01

Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3 -AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.

Caractérisations de matériaux et tests de composants des cellules solaires à base des nitrures des éléments III-V

OpenAIRE

Gorge , Vanessa

2012-01-01

Among III-V nitrides, the InGaN material has intensively been studied since the year 2000 for photovoltaic applications, in particular for multi-junction solar cells, thanks to its large tunable band gap covering almost the entire solar spectrum. Then, it will be possible to reach high efficiency and low cost. However, one of the problems of InGaN material is the absence of lattice-matched substrate leading to high defect density which limits device performances. We have thus studied the feas...

Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

Energy Technology Data Exchange (ETDEWEB)

Anderson, Virginia R.; Nepal, Neeraj; Johnson, Scooter D.; Robinson, Zachary R.; Nath, Anindya; Kozen, Alexander C.; Qadri, Syed B.; DeMasi, Alexander; Hite, Jennifer K.; Ludwig, Karl F.; Eddy, Charles R.

2017-05-01

Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layer epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

Science.gov (United States)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

Half-metallicity and electronic structures for carbon-doped group III-nitrides: Calculated with a modified Becke-Johnson potential

Science.gov (United States)

Fan, Shuai-wei; Wang, Ri-gao; Xu, Pemg

2016-09-01

The electronic structures and magnetism for carbon-doped group III-nitrides are investigated by utilizing the first principle method with the modified Becke-Johnson potential. Calculations show that carbon substituting cations (anions) would induce the group III-nitrides to be paramagnetic metals (half-metallic ferromagnets). Single carbon substituting nitrogen could produce 1.00μB magnetic moment. Electronic structures indicate that the carriers-mediated double-exchange interaction plays a crucial role in forming the ferromagnetism. Based on the mean-field theory, the Curie temperature for carbon-doped group III-nitrides would be above the room temperature. Negative chemical pair interactions imply that carbon dopants tend to form clustering distribution in group III-nitrides. The nitrogen vacancy would make the carbon-doped group III-nitrides lose the half-metallic ferromagnetism.

Prospects of III-nitride optoelectronics grown on Si

International Nuclear Information System (INIS)

Zhu, D; Wallis, D J; Humphreys, C J

2013-01-01

The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al 2 O 3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures. (review article)

Charge transport in non-polar and semi-polar III-V nitride heterostructures

International Nuclear Information System (INIS)

Konar, Aniruddha; Verma, Amit; Fang, Tian; Zhao, Pei; Jana, Raj; Jena, Debdeep

2012-01-01

Compared to the intense research focus on the optical properties, the transport properties in non-polar and semi-polar III-nitride semiconductors remain relatively unexplored to date. The purpose of this paper is to discuss charge-transport properties in non-polar and semi-polar orientations of GaN in a comparative fashion to what is known for transport in polar orientations. A comprehensive approach is adopted, starting from an investigation of the differences in the electronic bandstructure along different polar orientations of GaN. The polarization fields along various orientations are then discussed, followed by the low-field electron and hole mobilities. A number of scattering mechanisms that are specific to non-polar and semi-polar GaN heterostructures are identified, and their effects are evaluated. Many of these scattering mechanisms originate due to the coupling of polarization with disorder and defects in various incarnations depending on the crystal orientation. The effect of polarization orientation on carrier injection into quantum-well light-emitting diodes is discussed. This paper ends with a discussion of orientation-dependent high-field charge-transport properties including velocity saturation, instabilities and tunneling transport. Possible open problems and opportunities are also discussed. (paper)

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Science.gov (United States)

Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

2016-01-01

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

Doping of III-nitride materials

OpenAIRE

Pampili, Pietro; Parbrook, Peter J.

2016-01-01

In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as ex...

Growth and characterisation of group-III nitride-based nanowires for devices

Energy Technology Data Exchange (ETDEWEB)

Meijers, R J

2007-08-30

One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature T{sub sub} has been studied leading to the conclusion that the III-V ratio determines the growth mode. Ga desorption limits the temperature range to grow GaN nanowires and dissociation of InN is the limiting factor for InN nanowire growth. A reduction of the surface diffusivity on polar surfaces under N-rich conditions explains the anisotropic growth. Growth kinetics of the nanowires show that there are two important contributions to the growth. The first is growth by direct impingement and its contribution is independent of the nanowire diameter. The second contribution comes from atoms, which absorb on the substrate or wire sidewalls and diffuse along the sidewalls to the top of the wire, which acts as an effective sink for the adatoms due to a reduced surface mobility on the polar top of the wires. This diffusion channel, which is enhanced at higher T{sub sub}, becomes more significant for smaller wire diameters, because its contribution scales like 1/d. Experiments with an interruption of the growth and sharp interfaces in TEM images of heterostructures show that the suggestion in literature of a droplet-mediated PA-MBE nitride growth has to be discarded. Despite a thin amorphous silicon nitride wetting layer on the substrate surface, both GaN and InN nanowires grow in the wurtzite structure and epitaxially in a one-to-one relation to the Si(111) substrate surface. There is no evidence for cubic phases. TEM images and optical studies display a high crystalline and optical quality of GaN and InN nanowires. The substrate induces some strain in the bottom part of the nanowires, especially in InN due to the lower T{sub sub} than for GaN, which is released without the formation of dislocations. Only some stacking

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

Jimy Encomendero

2017-10-01

Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

Directory of Open Access Journals (Sweden)

Mohamed Sabry Mohamed

2017-03-01

Full Text Available We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG and third harmonic generation (THG in suspended gallium nitride slab photonic crystal (PhC cavities on silicon, under continuous-wave resonant excitation. Optimized two-dimensional PhC cavities with augmented far-field coupling have been characterized with quality factors as high as 4.4 × 104, approaching the computed theoretical values. The strong enhancement in light confinement has enabled efficient SHG, achieving a normalized conversion efficiency of 2.4 × 10−3 W−1, as well as simultaneous THG. SHG emission power of up to 0.74 nW has been detected without saturation. The results herein validate the suitability of gallium nitride for integrated nonlinear optical processing.

Optical characterization of gallium nitride

NARCIS (Netherlands)

Kirilyuk, Victoria

2002-01-01

Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

Growth of group III nitride films by pulsed electron beam deposition

International Nuclear Information System (INIS)

Ohta, J.; Sakurada, K.; Shih, F.-Y.; Kobayashi, A.; Fujioka, H.

2009-01-01

We have grown group III nitride films on Al 2 O 3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO (0001-bar) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C. - Graphical abstract: We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al 2 O 3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C.

X-ray diffraction analysis of cubic zincblende III-nitrides

International Nuclear Information System (INIS)

Frentrup, Martin; Lee, Lok Yi; Sahonta, Suman-Lata; Kappers, Menno J; Massabuau, Fabien; Gupta, Priti; Oliver, Rachel A; Humphreys, Colin J; Wallis, David J

2017-01-01

Solving the green gap problem is a key challenge for the development of future LED-based light systems. A promising approach to achieve higher LED efficiencies in the green spectral region is the growth of III-nitrides in the cubic zincblende phase. However, the metastability of zincblende GaN along with the crystal growth process often lead to a phase mixture with the wurtzite phase, high mosaicity, high densities of extended defects and point defects, and strain, which can all impair the performance of light emitting devices. X-ray diffraction (XRD) is the main characterization technique to analyze these device-relevant structural properties, as it is very cheap in comparison to other techniques and enables fast feedback times. In this review, we will describe and apply various XRD techniques to identify the phase purity in predominantly zincblende GaN thin films, to analyze their mosaicity, strain state, and wafer curvature. The different techniques will be illustrated on samples grown by metalorganic vapor phase epitaxy on pieces of 4″ SiC/Si wafers. We will discuss possible issues, which may arise during experimentation, and provide a critical view on the common theories. (topical review)

Mesoporous coaxial titanium nitride-vanadium nitride fibers of core-shell structures for high-performance supercapacitors.

Science.gov (United States)

Zhou, Xinhong; Shang, Chaoqun; Gu, Lin; Dong, Shanmu; Chen, Xiao; Han, Pengxian; Li, Lanfeng; Yao, Jianhua; Liu, Zhihong; Xu, Hongxia; Zhu, Yuwei; Cui, Guanglei

2011-08-01

In this study, titanium nitride-vanadium nitride fibers of core-shell structures were prepared by the coaxial electrospinning, and subsequently annealed in the ammonia for supercapacitor applications. These core-shell (TiN-VN) fibers incorporated mesoporous structure into high electronic conducting transition nitride hybrids, which combined higher specific capacitance of VN and better rate capability of TiN. These hybrids exhibited higher specific capacitance (2 mV s(-1), 247.5 F g(-1)) and better rate capability (50 mV s(-1), 160.8 F g(-1)), which promise a good candidate for high-performance supercapacitors. It was also revealed by electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) characterization that the minor capacitance fade originated from the surface oxidation of VN and TiN.

Electron scattering by native defects in III-V nitrides and their alloys

International Nuclear Information System (INIS)

Hsu, L.; Walukiewicz, W.

1996-03-01

We have calculated the electron mobilities in GaN and InN taking into consideration scattering by short range potentials, in addition to all standard scattering mechanisms. These potentials are produced by the native defects which are responsible for the high electron concentrations in nominally undoped nitrides. Comparison of the calculated mobilities with experimental data shows that scattering by short range potentials is the dominant mechanism limiting the electron mobilities in unintentionally doped nitrides with large electron concentrations. In the case of Al x Ga 1-x N alloys, the reduction in the electron concentration due to the upward shift of the conduction band relative to the native defect level can account for the experimentally measured mobilities. Resonant scattering is shown to be important when the defect and Fermi levels are close in energy

High-Efficiency Nitride-Based Solid-State Lighting

Energy Technology Data Exchange (ETDEWEB)

Paul T. Fini; Shuji Nakamura

2005-07-30

In this final technical progress report we summarize research accomplished during Department of Energy contract DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. Two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and the Lighting Research Center at Rensselaer Polytechnic Institute (led by Dr. N. Narendran), pursued the goals of this contract from thin film growth, characterization, and packaging/luminaire design standpoints. The UCSB team initially pursued the development of blue gallium nitride (GaN)-based vertical-cavity surface-emitting lasers, as well as ultraviolet GaN-based light emitting diodes (LEDs). In Year 2, the emphasis shifted to resonant-cavity light emitting diodes, also known as micro-cavity LEDs when extremely thin device cavities are fabricated. These devices have very directional emission and higher light extraction efficiency than conventional LEDs. Via the optimization of thin-film growth and refinement of device processing, we decreased the total cavity thickness to less than 1 {micro}m, such that micro-cavity effects were clearly observed and a light extraction efficiency of over 10% was reached. We also began the development of photonic crystals for increased light extraction, in particular for so-called ''guided modes'' which would otherwise propagate laterally in the device and be re-absorbed. Finally, we pursued the growth of smooth, high-quality nonpolar a-plane and m-plane GaN films, as well as blue light emitting diodes on these novel films. Initial nonpolar LEDs showed the expected behavior of negligible peak wavelength shift with increasing drive current. M-plane LEDs in particular show promise, as unpackaged devices had unsaturated optical output power of {approx} 3 mW at 200 mA drive current. The LRC's tasks were aimed at developing the subcomponents necessary for packaging UCSB's light

Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

Energy Technology Data Exchange (ETDEWEB)

Lawniczak-Jablonska, K. [Lawrence Berkeley National Lab., CA (United States)]|[Institute of Physics, Warsaw (Poland); Liliental-Weber, Z.; Gullikson, E.M. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction band structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties.

Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

International Nuclear Information System (INIS)

Lawniczak-Jablonska, K.; Liliental-Weber, Z.; Gullikson, E.M.

1997-01-01

Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction band structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties

Nitrogen Atom Transfer From High Valent Iron Nitrides

Energy Technology Data Exchange (ETDEWEB)

Johnson, Michael D. [New Mexico State Univ., Las Cruces, NM (United States); Smith, Jeremy M. [Indiana Univ., Bloomington, IN (United States)

2015-10-14

This report describes the synthesis and reactions of high valent iron nitrides. Organonitrogen compounds such as aziridines are useful species for organic synthesis, but there are few efficient methods for their synthesis. Using iron nitrides to catalytically access these species may allow for their synthesis in an energy-and atom-efficient manner. We have developed a new ligand framework to achieve these goals as well as providing a method for inducing previously unknown reactivity.

Thermodynamics of high-pressure ice polymorphs : ices III and V

NARCIS (Netherlands)

Tchijov, [No Value; Ayala, RB; Leon, GC; Nagornov, O

Thermodynamic properties of high-pressure ice polymorphs, ices III and V, are studied theoretically. The results of TIP4P molecular dynamics simulations in the NPT ensemble are used to calculate the temperature dependence of the specific volume of ices III and V at pressures 0.25 and 0.5 GPa,

Single-layer group IV-V and group V-IV-III-VI semiconductors: Structural stability, electronic structures, optical properties, and photocatalysis

Science.gov (United States)

Lin, Jia-He; Zhang, Hong; Cheng, Xin-Lu; Miyamoto, Yoshiyuki

2017-07-01

Recently, single-layer group III monochalcogenides have attracted both theoretical and experimental interest at their potential applications in photonic devices, electronic devices, and solar energy conversion. Excited by this, we theoretically design two kinds of highly stable single-layer group IV-V (IV =Si ,Ge , and Sn; V =N and P) and group V-IV-III-VI (IV =Si ,Ge , and Sn; V =N and P; III =Al ,Ga , and In; VI =O and S) compounds with the same structures with single-layer group III monochalcogenides via first-principles simulations. By using accurate hybrid functional and quasiparticle methods, we show the single-layer group IV-V and group V-IV-III-VI are indirect bandgap semiconductors with their bandgaps and band edge positions conforming to the criteria of photocatalysts for water splitting. By applying a biaxial strain on single-layer group IV-V, single-layer group IV nitrides show a potential on mechanical sensors due to their bandgaps showing an almost linear response for strain. Furthermore, our calculations show that both single-layer group IV-V and group V-IV-III-VI have absorption from the visible light region to far-ultraviolet region, especially for single-layer SiN-AlO and SnN-InO, which have strong absorption in the visible light region, resulting in excellent potential for solar energy conversion and visible light photocatalytic water splitting. Our research provides valuable insight for finding more potential functional two-dimensional semiconductors applied in optoelectronics, solar energy conversion, and photocatalytic water splitting.

Efficient n-type doping of zinc-blende III-V semiconductor nanowires

Science.gov (United States)

Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

2014-03-01

We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

III-Nitride Micro and Nano Structures for Solid State Lightning

KAUST Repository

Ben Slimane, Ahmed

2014-01-01

efficacy. Typically, LEDs rely on group-III-nitride materials to generate visible light. One of the techniques to generate white light is to coat blue LEDs with yellow phosphor, or ultraviolet (UV) LEDs with red-green-blue (RGB) phosphor. Other scheme

Optical characterisation of III-V nitride-based multiphase and diluted magnetic semiconductors

International Nuclear Information System (INIS)

Wegscheider, M.

2009-01-01

The present work is devoted to the investigation of the optical properties of transition metal doped Gallium nitride. The Gallium nitride layers are epitaxially grown in a full metalorganic chemical vapour deposition process whereas the transition metals iron or manganese as well as the n and p-type dopants silicon and magnesium are incorporated simultaneously. Background and driving force of the realization of such material systems is basically the evocation of ferromagnetic spin alignment where free carriers ensure the correspondence between the localized spin state provided by the metal ions. The production of completely new devices for semiconductor industries based on the possibility to switch on or off the ferrimagnetic alignment by changing the free carrier concentration can be expected in the near future. In this context photoluminescence studies in the ultraviolet and mid infrared spectral range at temperatures between the liquid helium point and room temperature at atmospheric pressure were made. These measurements basically provide information on optical transitions between the conduction and valence band and deep defects as well as on crystal field forced transitions within the d-orbitals of the metal ion involved. In this context valuable knowledge could have been gained on doping concentrations, growth fashions and parameters, formation of secondary phases as well as on the doping efficiency and incorporation sites of the metal atoms. (author) [de

Leading Modes of the 3pi0 production in proton-proton collisions at incident proton momentum 3.35GeV/c

Science.gov (United States)

Jampana, Balakrishnam R.

The III-nitride semiconductor material system, which consists of InN, GaN, AlN and their alloys, offers a substantial potential in developing ultra-high efficiency photovoltaics mainly due to its wide range of direct-bandgap (0.7 eV -- 3.4 eV), and other electronic, optical and mechanical properties. However, this novel InGaN material system poses technological challenges which extended into the performance of InGaN devices. The development of wide-band gap p--n InGaN homojunction solar cells with bandgap type III-nitride epilayer to reduce the series resistance is evaluated. The III-nitrides are primarily grown on sapphire substrate and in a continued effort they are realized later on silicon substrate. InGaN solar cell structures were grown simultaneously on GaN/sapphire and GaN/silicon templates and their photoresponse is compared.

Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis

International Nuclear Information System (INIS)

Minj, Albert; Cavalcoli, Daniela; Cavallini, Anna; Gamarra, Piero; Di Forte Poisson, Marie-Antoinette

2013-01-01

Here, we report on significant material information provided by semi-contact phase-images in a wide range of hard III-nitride surfaces. We show that the phase contrast, which is fundamentally related to the energy dissipation during tip–surface interaction, is sensitive to the crystalline nature of the material and thus could potentially be used to determine the crystalline quality of thin nitride layers. Besides, we found that the structural defects, especially threading dislocations and cracks, act as selective sites where energy mainly dissipates. Consequently, in nitrides defects with very low dimensions can actually be imaged with phase-contrast imaging. (paper)

Phonon and free-charge carrier properties in group-III nitride heterostructures investigated by spectroscopic ellipsometry and optical Hall effect

Science.gov (United States)

Schoeche, Stefan

The material class of group-III nitrides gained tremendous technological importance for optoelectronic and high-power/high-frequency amplification devices. Tunability of the direct band gap from 0.65 eV (InN) to 6.2 eV (AlN) by alloying, high breakthrough voltages and intrinsic mobilities, as well as the formation of highly mobile 2d electron gases (2DEG) at heterointerfaces make these compounds ideal for many applications. GaN and Ga-rich alloys are well studied and current research is mainly device-oriented. For example, choice and quality of the gate dielectric significantly influence device performance in high-electron mobility transistors (HEMT) which utilize highly mobile 2DEGs at heterointerfaces. Experimental access to the 2DEG channel properties without influence from parasitic currents or contact properties are desirable. In- and Al-rich ternary alloys are less explored than Ga-rich compounds. For InN and In-rich alloys, while many material parameters such as stiffness constants or effective mass values are largely unknown, reliable p-type doping is a major challenge, also because p-type conducting channels are buried within highly conductive n-type material formed at the surface and interfaces preventing electrical characterization. For AlN and high-Al content alloys, doping mechanisms are not understood and reliable fabrication of material with high free-charge carrier (FCC) concentrations was achieved just recently. Difficulties to form ohmic contacts impair electrical measurements and optical characterization is impeded by lack of high-energy excitation sources. In this work, spectroscopic ellipsometry over the wide spectral range from the THz to VUV in combination with optical Hall effect (generalized ellipsometry with applied magnetic field) from THz to MIR are applied in order to investigate the phonon modes and FCC properties in group-III nitride heterostructures. Adequate model descriptions and analysis strategies are introduced which allow

High bandgap III-V alloys for high efficiency optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

2017-01-10

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Charge carrier transport properties in layer structured hexagonal boron nitride

Directory of Open Access Journals (Sweden)

T. C. Doan

2014-10-01

Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

III-Nitride Micro and Nano Structures for Solid State Lightning

KAUST Repository

Ben Slimane, Ahmed

2014-08-01

Visible light emitting diodes (LEDs) are widely used in daily consumer electronics systems, such as general lighting, displays, communication, sensing, and also biomedical applications. To mitigate the ever increasing technology demand, there are tremendous on-going efforts in improving material properties and micro-fabrication techniques. In general, visible LEDs are environmentally friendly, robust and reliable light emitters with small device footprint, and are capable of delivering high luminous efficacy. Typically, LEDs rely on group-III-nitride materials to generate visible light. One of the techniques to generate white light is to coat blue LEDs with yellow phosphor, or ultraviolet (UV) LEDs with red-green-blue (RGB) phosphor. Other scheme relies on combination of RGB LEDs, where high brightness green and blue LEDs are generally grown on robust sapphire substrate. But the current challenges in high threading dislocation density of III-Nitride materials on sapphire or hetero-substrate, phosphor degradation, and bulk-LED mechanical design constraints imposed by the supporting substrate wafer motivate further scientific investigations into strain-engineering, novel reliable phosphor-semiconductor, color-tuning techniques, and transferrable III-nitride vertical LEDs. The current research presents a significant step towards the utilization of annealed porous GaN as a template for subsequent growth of fully relaxed GaN-based epitaxy materials. In our study, we observed significant compressive strain relaxation of 0.41 ± 0.04 GPa in annealed porous GaN fabricated using UV-assisted electroless etching. Moreover the use of GaN nanoparticles with large wavelength tunability and 10 µm InGaN microstructures with different indium composition ushers a new way of making reliable phosphor for white light generation. We also investigate the epitaxial lift-off of InGaN LED structures by selectively etching unintentionally doped GaN sacrificial buffer layer. High Ga

III-Nitride Membranes for Thermal Bio-Sensing and Solar Hydrogen Generation

KAUST Repository

Elafandy, Rami T.

2017-01-01

demonstrate the versatility of III-nitride membranes where we develop a thermal bio-sensor nanomembrane and solar energy photo-anode membrane. First, we present a novel preparation technique of nanomembranes with new characteristics; having no threading

Synthesis and characterization of group V metal carbide and nitride catalysts

Science.gov (United States)

Kwon, Heock-Hoi

1998-11-01

Group V transition metal carbides and nitrides were prepared via the temperature programmed reaction (TPR) of corresponding oxides with NHsb3 or a CHsb4/Hsb2 mixture. Except for the tantalum compounds, phase-pure carbides and nitrides were prepared. The vanadium carbides and nitrides were the most active and selective catalysts. Therefore the principal focus of the research was the preparation, characterization, and evaluation of high surface area vanadium nitride catalysts. A series of vanadium nitrides with surface areas up to 60 msp2/g was prepared. Thermal gravimetric analysis coupled with x-ray diffraction and scanning electron microscopy indicated that the solid-state reaction proceeded by the sequential reduction of Vsb2Osb5 to VOsb{0.9} and concluded with the topotactic substitution of nitrogen for oxygen in VOsb{0.9}. The transformation of Vsb2Osb5 to VN was pseudomorphic. An experimental design was executed to determine effects of the heating rates and space velocities on the VN microstructures. The heating rates had minor effects on the surface areas and pore size distributions; however, increasing the space velocity significantly increased the surface area. The materials were mostly mesoporous. Oxygen chemisorption on the vanadium nitrides scaled linearly with the surface area. The corresponding O/Vsbsurface ratio was ≈0.6. The vanadium nitrides were active for butane activation and pyridine hydrodenitrogenation. During butane activation, their selectivities towards dehydrogenation products were as high as 98%. The major product in pyridine hydrodenitrogenation was pentane. The reaction rates increased almost linearly with the surface area suggesting that these reactions were structure insensitive. The vanadium nitrides were not active for crotonaldehyde hydrogenation; however, they catalyzed an interesting ring formation reaction that produced methylbenzaldehyde and xylene from crotonaldehyde. A new method was demonstrated for the production of very

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

KAUST Repository

Mumthaz Muhammed, Mufasila

2018-01-01

performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

KAUST Repository

Prabaswara, Aditya

2018-02-06

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

Science.gov (United States)

Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

2014-01-01

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In0.17Al0.83N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with being above). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering. PMID:25283334

Performance analysis of nanodisk and core/shell/shell-nanowire type III-Nitride heterojunction solar cell for efficient energy harvesting

Science.gov (United States)

Routray, S. R.; Lenka, T. R.

2017-11-01

Now-a-days III-Nitride nanowires with axial (nanodisk) and radial (core/shell/shell-nanowire) junctions are two unique and potential methods for solar energy harvesting adopted by worldwide researchers. In this paper, polarization behavior of GaN/InGaN/GaN junction and its effect on carrier dynamics of nanodisk and CSS-nanowire type solar cells are intensively studied and compared with its planar counterpart by numerical simulations using commercially available Victory TCAD. It is observed that CSS-NW with hexagonal geometrical shapes are robust to detrimental impact of polarization charges and could be good enough to accelerate carrier collection efficiency as compared to nanodisk and planar solar cells. This numerical study provides an innovative aspect of fundamental device physics with respect to polarization charges in CSS-NW and nanodisk type junction towards photovoltaic applications. The internal quantum efficiencies (IQE) are also discussed to evaluate carrier collection mechanisms and recombination losses in each type of junctions of solar cell. Finally, it is interesting to observe a maximum conversion efficiency of 6.46% with 91.6% fill factor from n-GaN/i-In0.1Ga0.9N/p-GaN CSS-nanowire solar cell with an optimized thickness of 180 nm InGaN layer under one Sun AM1.5 illumination.

III-nitride based light emitting diodes and applications

CERN Document Server

Han, Jung; Amano, Hiroshi; Morkoç, Hadis

2017-01-01

The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performanc...

Nitride passivation of the interface between high-k dielectrics and SiGe

Energy Technology Data Exchange (ETDEWEB)

Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

2016-01-04

In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices.

Science.gov (United States)

Glavin, Nicholas R; Chabak, Kelson D; Heller, Eric R; Moore, Elizabeth A; Prusnick, Timothy A; Maruyama, Benji; Walker, Dennis E; Dorsey, Donald L; Paduano, Qing; Snure, Michael

2017-12-01

Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state-of-the-art values for electrical performance, with electron mobility exceeding 2000 cm 2 V -1 s -1 and sheet carrier density above 1.07 × 10 13 cm -2 . The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

Science.gov (United States)

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

Science.gov (United States)

Ahn, Doyeol; Park, Seoung-Hwan

2016-01-01

In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology. PMID:26880097

Advances in High-Efficiency III-V Multijunction Solar Cells

Directory of Open Access Journals (Sweden)

Richard R. King

2007-01-01

Full Text Available The high efficiency of multijunction concentrator cells has the potential to revolutionize the cost structure of photovoltaic electricity generation. Advances in the design of metamorphic subcells to reduce carrier recombination and increase voltage, wide-band-gap tunnel junctions capable of operating at high concentration, metamorphic buffers to transition from the substrate lattice constant to that of the epitaxial subcells, concentrator cell AR coating and grid design, and integration into 3-junction cells with current-matched subcells under the terrestrial spectrum have resulted in new heights in solar cell performance. A metamorphic Ga0.44In0.56P/Ga0.92In0.08As/ Ge 3-junction solar cell from this research has reached a record 40.7% efficiency at 240 suns, under the standard reporting spectrum for terrestrial concentrator cells (AM1.5 direct, low-AOD, 24.0 W/cm2, 25∘C, and experimental lattice-matched 3-junction cells have now also achieved over 40% efficiency, with 40.1% measured at 135 suns. This metamorphic 3-junction device is the first solar cell to reach over 40% in efficiency, and has the highest solar conversion efficiency for any type of photovoltaic cell developed to date. Solar cells with more junctions offer the potential for still higher efficiencies to be reached. Four-junction cells limited by radiative recombination can reach over 58% in principle, and practical 4-junction cell efficiencies over 46% are possible with the right combination of band gaps, taking into account series resistance and gridline shadowing. Many of the optimum band gaps for maximum energy conversion can be accessed with metamorphic semiconductor materials. The lower current in cells with 4 or more junctions, resulting in lower I2R resistive power loss, is a particularly significant advantage in concentrator PV systems. Prototype 4-junction terrestrial concentrator cells have been grown by metal-organic vapor-phase epitaxy, with preliminary measured

Diagnostic of corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

Energy Technology Data Exchange (ETDEWEB)

Escobar, C.; Villarreal, M. [Thin Film Group, Universidad del Valle, A.A. 25360, Cali (Colombia); Caicedo, J.C., E-mail: jcaicedoangulo1@gmail.com [Powder Metallurgy and Processing of Solid Recycled Research Group, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingeniería Mecatrónica, Universidad Militar Nueva Granada, Bogotá (Colombia); Caicedo, H.H. [Department of Bioengineering, University of Illinois at Chicago, IL 60612 (United States); Department of Anatomy and Cell Biology, University of Illinois at Chicago, IL 60612 (United States); Prieto, P. [Thin Film Group, Universidad del Valle, A.A. 25360, Cali (Colombia); Center of Excellence for Novel Materials, CENM, Cali (Colombia)

2013-10-31

HfN/VN multilayered systems were grown on 4140 steel substrates with the aim to improve their electrochemical behavior. The multilayered coatings were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n) while maintaining constant the total coating thickness (∼ 1.2 μm). The coatings were characterized by X-ray diffraction (XRD), and electron microscopy. The electrochemical properties were studied by Electrochemical Impedance Spectroscopy and Tafel curves. XRD results showed preferential growth in the face-centered cubic (111) crystal structure for [HfN/VN]{sub n} multilayered coatings. The maximum corrosion resistance was obtained for coatings with (Λ) equal to 15 nm, corresponding to bilayer n = 80. Polarization resistance and corrosion rate was around 112.19 kΩ cm{sup 2} and 0.094*10{sup −3} mmy respectively; moreover, these multilayered system showed a decrease of 80% on mass loss due to the corrosive–erosive process, in relation to multilayered systems with n = 1 and Λ = 1200. HfN/VN multilayers have been designed and deposited on Si (100) and AISI 4140 steel substrates with bilayer periods (Λ) in a broad range, from nanometers to hundreds of nanometers to study the microstructural evolution and electrochemical progress with decreasing bilayer thickness. - Highlights: • Enhancements on surface electrochemical properties and response to surface corrosion attack. • Superficial phenomenon that occurs in corrosion surface of [Hf-Nitrides/V-Nitrides]n • Corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures.

Diagnostic of corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

International Nuclear Information System (INIS)

Escobar, C.; Villarreal, M.; Caicedo, J.C.; Aperador, W.; Caicedo, H.H.; Prieto, P.

2013-01-01

HfN/VN multilayered systems were grown on 4140 steel substrates with the aim to improve their electrochemical behavior. The multilayered coatings were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n) while maintaining constant the total coating thickness (∼ 1.2 μm). The coatings were characterized by X-ray diffraction (XRD), and electron microscopy. The electrochemical properties were studied by Electrochemical Impedance Spectroscopy and Tafel curves. XRD results showed preferential growth in the face-centered cubic (111) crystal structure for [HfN/VN] n multilayered coatings. The maximum corrosion resistance was obtained for coatings with (Λ) equal to 15 nm, corresponding to bilayer n = 80. Polarization resistance and corrosion rate was around 112.19 kΩ cm 2 and 0.094*10 −3 mmy respectively; moreover, these multilayered system showed a decrease of 80% on mass loss due to the corrosive–erosive process, in relation to multilayered systems with n = 1 and Λ = 1200. HfN/VN multilayers have been designed and deposited on Si (100) and AISI 4140 steel substrates with bilayer periods (Λ) in a broad range, from nanometers to hundreds of nanometers to study the microstructural evolution and electrochemical progress with decreasing bilayer thickness. - Highlights: • Enhancements on surface electrochemical properties and response to surface corrosion attack. • Superficial phenomenon that occurs in corrosion surface of [Hf-Nitrides/V-Nitrides]n • Corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers

Energy Technology Data Exchange (ETDEWEB)

Maroldt, Stephan

2012-07-01

Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base stations for mobile communication. This novel digital base station concept reduces system energy consumption, complexity, size and costs, while the flexibility in terms of multi-band operation and signal modulation improves. In this work, innovative core circuits for digital high-efficiency class-D and class-S power amplifiers based on gallium nitride (GaN) technology were developed for the application in digital base stations. A combination of optimized GaN devices and improvements in circuit design allow a highly-efficient switch-mode operation at mobile communication frequencies between 0.45 GHz and 2 GHz. Transistor device modeling for switch-mode operation, the simulation environment, and a broadband measurement system were established for the design and evaluation of digital switchmode power amplifiers. The design of broadband core circuits for switch-mode amplifier concepts was analyzed for dual-stage amplifier circuits, using an initial GaN technology with a gate length of 0.25 {mu}m. A speed-enhanced driver stage improved the circuit switching speed sufficiently above 1 GHz. Speed and efficiency of the amplifier core circuits were studied related to transistor parameters like cut-off frequency or gate capacitance. A reduced gate length was found to improve the switching speed, while a lower on-resistance allows the reduction of the inherent static losses of the GaN-based switches. Apart from this, the restriction of a 50 Ohm environment was found to be a major output power and switching speed limitation, due to a poor switching drive capability of the input capacitance of the GaN circuit. Finally, the optimized transistor and circuit design with an output gate width of 1.2 mm were effectively implemented in the given environment for an operation up to 2 GHz with a high drain efficiency of >65% and a digital output power of 5 W. A maximum output power of 9.7 W and a

Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

KAUST Repository

Myzaferi, A.; Reading, A. H.; Cohen, D. A.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P.

2016-01-01

The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time

Hexagonal boron nitride neutron detectors with high detection efficiencies

Science.gov (United States)

Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.

2018-01-01

Neutron detectors fabricated from 10B enriched hexagonal boron nitride (h-10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer on both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h-10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.

Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

Science.gov (United States)

Chen, Tai-Chou Papo

The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

Hybrid III-V/silicon lasers

Science.gov (United States)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

Science.gov (United States)

Han, Jung; Kneissl, Michael

2012-02-01

Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

Method to grow group III-nitrides on copper using passivation layers

Science.gov (United States)

Li, Qiming; Wang, George T; Figiel, Jeffrey T

2014-06-03

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

Engineering Strain for Improved III-Nitride Optoelectronic Device Performance

Science.gov (United States)

Van Den Broeck, Dennis Marnix

Due to growing environmental and economic concerns, renewable energy generation and high-efficiency lighting are becoming even more important in the scientific community. III-Nitride devices have been essential in production of high-brightness light-emitting diodes (LEDs) and are now entering the photovoltaic (PV) realm as the technology advances. InGaN/GaN multiple quantum well LEDs emitting in the blue/green region have emerged as promising candidates for next-generation lighting technologies. Due to the large lattice mismatch between InN and GaN, large electric fields exist within the quantum well layers and result in low rates of radiative recombination, especially for the green spectral region. This is commonly referred to as the "green gap" and results in poor external quantum efficiencies for light-emitting diodes and laser diodes. In order to mitigate the compressive stress of InGaN QWs, a novel growth technique is developed in order to grown thick, strain-relaxed In yGa1-yN templates for 0.08 structure, "semibulk" InGaN templates were achieved with vastly superior crystal and optical properties than bulk InGaN films. These semibulk InGaN templates were then utilized as new templates for multiple quantum well active layers, effectively reducing the compressive strain in the InGaN wells due to the larger lattice constant of the InGaN template with respect to a GaN template. A zero-stress balance method was used in order to realize a strain-balanced multiple quantum well structure, which again showed improved optical characteristics when compared to fully-strain active regions. The semibulk InGaN template was then implemented into "strain-compensated" LED structures, where light emission was achieved with very little leakage current. Discussion of these strain-compensated devices compared to conventional LEDs is detailed.

Gallium nitride-based micro-opto-electro-mechanical systems

Science.gov (United States)

Stonas, Andreas Robert

Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial

Heterostructures for Increased Quantum Efficiency in Nitride LEDs

Energy Technology Data Exchange (ETDEWEB)

Davis, Robert F. [Carnegie Mellon Univ., Pittsburgh, PA (United States)

2010-09-30

Task 1. Development of an advanced LED simulator useful for the design of efficient nitride-based devices. Simulator will contain graphical interface software that can be used to specify the device structure, the material parameters, the operating conditions and the desired output results. Task 2. Theoretical and experimental investigations regarding the influence on the microstructure, defect concentration, mechanical stress and strain and IQE of controlled changes in the chemistry and process route of deposition of the buffer layer underlying the active region of nitride-based blue- and greenemitting LEDs. Task 3. Theoretical and experimental investigations regarding the influence on the physical properties including polarization and IQE of controlled changes in the geometry, chemistry, defect density, and microstructure of components in the active region of nitride-based blue- and green-emitting LEDs. Task 4. Theoretical and experimental investigations regarding the influence on IQE of novel heterostructure designs to funnel carriers into the active region for enhanced recombination efficiency and elimination of diffusion beyond this region. Task 5. Theoretical and experimental investigations regarding the influence of enhanced p-type doping on the chemical, electrical, and microstructural characteristics of the acceptor-doped layers, the hole injection levels at Ohmic contacts, the specific contact resistivity and the IQE of nitride-based blue- and green-emitting LEDs. Development and optical and electrical characterization of reflective Ohmic contacts to n- and p-type GaN films.

Electrical properties of dislocations in III-Nitrides

Energy Technology Data Exchange (ETDEWEB)

Cavalcoli, D.; Minj, A.; Pandey, S.; Cavallini, A. [Physics and Astronomy Dept. University of Bologna, Italy viale C Berti Pichat 6/II, Bologna (Italy)

2014-02-21

Research on GaN, AlN, InN (III-N) and their alloys is achieving new heights due their high potential applications in photonics and electronics. III-N semiconductors are mostly grown epitaxially on sapphire, and due to the large lattice mismatch and the differences in the thermal expansion coefficients, the structures usually contain many threading dislocations (TDs). While their structural properties have been widely investigated, their electrical characteristics and their role in the transport properties of the devices are still debated. In the present contribution we will show conductive AFM studies of TDs in GaN and Al/In GaN ternary alloys to evidence the role of strain, different surface polarity and composition on their electrical properties. Local I-V curves measured at TDs allowed us to clarify their role in the macroscopic electrical properties (leakage current, mobilities) of III-N based devices. Samples obtained by different growers (AIXTRON, III-V Lab) were studied. The comparison between the results obtained in the different alloys allowed us to understand the role of In and Al on the TDs electrical properties.

Electrical properties of dislocations in III-Nitrides

Science.gov (United States)

Cavalcoli, D.; Minj, A.; Pandey, S.; Cavallini, A.

2014-02-01

Research on GaN, AlN, InN (III-N) and their alloys is achieving new heights due their high potential applications in photonics and electronics. III-N semiconductors are mostly grown epitaxially on sapphire, and due to the large lattice mismatch and the differences in the thermal expansion coefficients, the structures usually contain many threading dislocations (TDs). While their structural properties have been widely investigated, their electrical characteristics and their role in the transport properties of the devices are still debated. In the present contribution we will show conductive AFM studies of TDs in GaN and Al/In GaN ternary alloys to evidence the role of strain, different surface polarity and composition on their electrical properties. Local I-V curves measured at TDs allowed us to clarify their role in the macroscopic electrical properties (leakage current, mobilities) of III-N based devices. Samples obtained by different growers (AIXTRON, III-V Lab) were studied. The comparison between the results obtained in the different alloys allowed us to understand the role of In and Al on the TDs electrical properties.

Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

Science.gov (United States)

Jaiswal, Piyush; Ul Muazzam, Usman; Pratiyush, Anamika Singh; Mohan, Nagaboopathy; Raghavan, Srinivasan; Muralidharan, R.; Shivashankar, S. A.; Nath, Digbijoy N.

2018-01-01

We report on the deposition of Ga2O3 on III-nitride epi-layers using the microwave irradiation technique. We also report on the demonstration of a Ga2O3 device: a visible-blind, deep-UV detector, with a GaN-based heterostructure as the substrate. The film deposited in the solution medium, at <200 °C, using a metalorganic precursor, was nanocrystalline. XRD confirms that the as-deposited film, when annealed at high temperature, turns to polycrystalline β-Ga2O3. SEM shows the as-deposited film to be uniform, with a surface roughness of 4-5 nm, as revealed by AFM. Interdigitated metal-semiconductor-metal devices with Ni/Au contact exhibited a peak spectral response at 230 nm and a good visible rejection ratio. This demonstration of a deep-UV detector on the β-Ga2O3/III-nitride stack is expected to open up possibilities of functional and physical integration of β-Ga2O3 and GaN material families towards enabling next-generation high-performance devices by exciting band and heterostructure engineering.

Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

Energy Technology Data Exchange (ETDEWEB)

Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2016-01-18

We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

Highly efficient cobalt-doped carbon nitride polymers for solvent-free selective oxidation of cyclohexane

Directory of Open Access Journals (Sweden)

Yu Fu

2017-04-01

Full Text Available Selective oxidation of saturated hydrocarbons with molecular oxygen has been of great interest in catalysis, and the development of highly efficient catalysts for this process is a crucial challenge. A new kind of heterogeneous catalyst, cobalt-doped carbon nitride polymer (g-C3N4, was harnessed for the selective oxidation of cyclohexane. X-ray diffraction, Fourier transform infrared spectra and high resolution transmission electron microscope revealed that Co species were highly dispersed in g-C3N4 matrix and the characteristic structure of polymeric g-C3N4 can be retained after Co-doping, although Co-doping caused the incomplete polymerization to some extent. Ultraviolet–visible, Raman and X-ray photoelectron spectroscopy further proved the successful Co doping in g-C3N4 matrix as the form of Co(IIN bonds. For the selective oxidation of cyclohexane, Co-doping can markedly promote the catalytic performance of g-C3N4 catalyst due to the synergistic effect of Co species and g-C3N4 hybrid. Furthermore, the content of Co largely affected the activity of Co-doped g-C3N4 catalysts, among which the catalyst with 9.0 wt% Co content exhibited the highest yield (9.0% of cyclohexanone and cyclohexanol, as well as a high stability. Meanwhile, the reaction mechanism over Co-doped g-C3N4 catalysts was elaborated. Keywords: Selective oxidation of cyclohexane, Oxygen oxidant, Carbon nitride, Co-doping

Selective layer disordering in III-nitrides with a capping layer

Science.gov (United States)

Wierer, Jr., Jonathan J.; Allerman, Andrew A.

2016-06-14

Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

Test study of boron nitride as a new detector material for dosimetry in high-energy photon beams

Science.gov (United States)

Poppinga, D.; Halbur, J.; Lemmer, S.; Delfs, B.; Harder, D.; Looe, H. K.; Poppe, B.

2017-09-01

The aim of this test study is to check whether boron nitride (BN) might be applied as a detector material in high-energy photon-beam dosimetry. Boron nitride exists in various crystalline forms. Hexagonal boron nitride (h-BN) possesses high mobility of the electrons and holes as well as a high volume resistivity, so that ionizing radiation in the clinical range of the dose rate can be expected to produce a measurable electrical current at low background current. Due to the low atomic numbers of its constituents, its density (2.0 g cm-3) similar to silicon and its commercial availability, h-BN appears as possibly suitable for the dosimetry of ionizing radiation. Five h-BN plates were contacted to triaxial cables, and the detector current was measured in a solid-state ionization chamber circuit at an applied voltage of 50 V. Basic dosimetric properties such as formation by pre-irradiation, sensitivity, reproducibility, linearity and temporal resolution were measured with 6 MV photon irradiation. Depth dose curves at quadratic field sizes of 10 cm and 40 cm were measured and compared to ionization chamber measurements. After a pre-irradiation with 6 Gy, the devices show a stable current signal at a given dose rate. The current-voltage characteristic up to 400 V shows an increase in the collection efficiency with the voltage. The time-resolved detector current behavior during beam interrupts is comparable to diamond material, and the background current is negligible. The measured percentage depth dose curves at 10 cm  ×  10 cm field size agreed with the results of ionization chamber measurements within  ±2%. This is a first study of boron nitride as a detector material for high-energy photon radiation. By current measurements on solid ionization chambers made from boron nitride chips we could demonstrate that boron nitride is in principle suitable as a detector material for high-energy photon-beam dosimetry.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Science.gov (United States)

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Facile CO cleavage by a multimetallic CsU2 nitride complex

International Nuclear Information System (INIS)

Falcone, Marta; Scopelliti, Rosario; Mazzanti, Marinella; Kefalidis, Christos E.; Maron, Laurent

2016-01-01

Uranium nitrides are important materials with potential for application as fuels for nuclear power generation, and as highly active catalysts. Molecular nitride compounds could provide important insight into the nature of the uranium-nitride bond, but currently little is known about their reactivity. In this study, we found that a complex containing a nitride bridging two uranium centers and a cesium cation readily cleaved the C≡O bond (one of the strongest bonds in nature) under ambient conditions. The product formed has a [CsU 2 (μ-CN)(μ-O)] core, thus indicating that the three cations cooperate to cleave CO. Moreover, the addition of MeOTf to the nitride complex led to an exceptional valence disproportionation of the CsU IV -N-U IV core to yield CsU III (OTf) and [MeN=U V ] fragments. The important role of multimetallic cooperativity in both reactions is illustrated by the computed reaction mechanisms.

Facile CO Cleavage by a Multimetallic CsU2 Nitride Complex.

Science.gov (United States)

Falcone, Marta; Kefalidis, Christos E; Scopelliti, Rosario; Maron, Laurent; Mazzanti, Marinella

2016-09-26

Uranium nitrides are important materials with potential for application as fuels for nuclear power generation, and as highly active catalysts. Molecular nitride compounds could provide important insight into the nature of the uranium-nitride bond, but currently little is known about their reactivity. In this study, we found that a complex containing a nitride bridging two uranium centers and a cesium cation readily cleaved the C≡O bond (one of the strongest bonds in nature) under ambient conditions. The product formed has a [CsU2 (μ-CN)(μ-O)] core, thus indicating that the three cations cooperate to cleave CO. Moreover, the addition of MeOTf to the nitride complex led to an exceptional valence disproportionation of the CsU(IV) -N-U(IV) core to yield CsU(III) (OTf) and [MeN=U(V) ] fragments. The important role of multimetallic cooperativity in both reactions is illustrated by the computed reaction mechanisms. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly catalytic and stabilized titanium nitride nanowire array-decorated graphite felt electrodes for all vanadium redox flow batteries

Science.gov (United States)

Wei, L.; Zhao, T. S.; Zeng, L.; Zeng, Y. K.; Jiang, H. R.

2017-02-01

In this work, we prepare a highly catalytic and stabilized titanium nitride (TiN) nanowire array-decorated graphite felt electrode for all vanadium redox flow batteries (VRFBs). Free-standing TiN nanowires are synthesized by a two-step process, in which TiO2 nanowires are first grown onto the surface of graphite felt via a seed-assisted hydrothermal method and then converted to TiN through nitridation reaction. When applied to VRFBs, the prepared electrode enables the electrolyte utilization and energy efficiency to be 73.9% and 77.4% at a high current density of 300 mA cm-2, which are correspondingly 43.3% and 15.4% higher than that of battery assembled with a pristine electrode. More impressively, the present battery exhibits good stability and high capacity retention during the cycle test. The superior performance is ascribed to the significant improvement in the electrochemical kinetics and enlarged active sites toward V3+/V2+ redox reaction.

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

Science.gov (United States)

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

2005-02-01

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

Wear behaviour of nitrogen-implanted and nitrided Ti-6Al-4V alloy

International Nuclear Information System (INIS)

Martinella, R.; Giovanardi, S.; Chevallard, G.; Villani, M.; Molinari, A.; Tosello, C.

1985-01-01

The comparison between the wear behaviour of nitrogen-implanted Ti-6Al-4V alloy and that of nitrided Ti-6Al-4V alloy is reported. Both treatments were carried out at temperatures from 573 to 973 K on lapped surfaces; in order to compare roughness effects, nitriding was also carried out on rougher samples. An improvement in wear resistance for lapped surfaces was noted after implantation at 573 K or higher temperatures and after nitriding at temperatures over 773 K only; however, at 873 K, nitriding was more effective than implantation. Rough nitrided surfaces showed better wear resistance than lapped nitrided surfaces or lapped implanted surfaces. Most probably the improvement in wear resistance on implanted samples is due to a reduction in friction induced by chemical modification of the surface as a result of oxide and TiN. Scanning electron microscopy observations which show subsurface voids and coalescence are in good agreement with a wear model previously reported. As implantation preserves the surface finish, a possible application is suggested. (Auth.)

Characteristics of Au/PZT/TiO2/Nitride/Si structure capacitors with ICP nitride treatments

International Nuclear Information System (INIS)

Min, Hyung Seob; Kim, Tae Ho; Jeon, Chang Bae; Lee, Jae Gab; Kim, Ji Young

2002-01-01

In this study, the characteristics of PZT/TiO 2 ferroelectric gate stack capacitors with Inductively Coupled Plasma (ICP) nitridation were investigated for field effect transistor (FET)-type Ferroelectric Random Access Memory (FeRAM) applications. If a high accumulation capacitance is to be had, the ICP nitridation time needs to be optimized. While a short ICP treatment time results in thermal oxide growth due to lack of nitrogen, a long nitridation time causes a nitride layer which is too thick. Au/PZT(200 nm)/TiO 2 (40 nm)/Nitride/Si (MeFINS) structure capacitors show a memory window (ΔV) of 1.6 V under ±3-V operation while Au/PZT(200 nm)/TiO 2 (40 nm)/Si (MeFIS) capacitors without nitride treatment exhibit a small memory window of 0.6 V. At the same time, the capacitance of the MeFINS device is almost twice that of the MeFIS capacitor. This result implies that the ICP nitride treatment suppresses the formation of a low dielectric constant interfacial SiO x layer and alleviates the series capacitance problem

High-Efficiency Nitride-Based Solid-State Lighting. Final Technical Progress Report

International Nuclear Information System (INIS)

Paul T. Fini; Shuji Nakamura

2005-01-01

In this final technical progress report we summarize research accomplished during Department of Energy contract DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. Two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and the Lighting Research Center at Rensselaer Polytechnic Institute (led by Dr. N. Narendran), pursued the goals of this contract from thin film growth, characterization, and packaging/luminaire design standpoints. The UCSB team initially pursued the development of blue gallium nitride (GaN)-based vertical-cavity surface-emitting lasers, as well as ultraviolet GaN-based light emitting diodes (LEDs). In Year 2, the emphasis shifted to resonant-cavity light emitting diodes, also known as micro-cavity LEDs when extremely thin device cavities are fabricated. These devices have very directional emission and higher light extraction efficiency than conventional LEDs. Via the optimization of thin-film growth and refinement of device processing, we decreased the total cavity thickness to less than 1 (micro)m, such that micro-cavity effects were clearly observed and a light extraction efficiency of over 10% was reached. We also began the development of photonic crystals for increased light extraction, in particular for so-called ''guided modes'' which would otherwise propagate laterally in the device and be re-absorbed. Finally, we pursued the growth of smooth, high-quality nonpolar a-plane and m-plane GaN films, as well as blue light emitting diodes on these novel films. Initial nonpolar LEDs showed the expected behavior of negligible peak wavelength shift with increasing drive current. M-plane LEDs in particular show promise, as unpackaged devices had unsaturated optical output power of ∼ 3 mW at 200 mA drive current. The LRC's tasks were aimed at developing the subcomponents necessary for packaging UCSB's light emitting diodes, and packaging them to produce a white light

Morphology of interior interfaces in dilute nitride III/V material systems; Morphologie innerer Grenzflaechen in verduennt stickstoffhaltigen III/V-Materialsystemen

Energy Technology Data Exchange (ETDEWEB)

Oberhoff, S.

2007-12-03

This study aims to clarify structure formation processes in dilute N-containing III/V-based material systems, using highly selective etching methods and subsequent atomic force microscopy (AFM) to expose and analyse interior interfaces. In the first part of this study it was directly proved for the first time that adding Sb during growth interruption inhibits the GI-induced structural phase transition and reduces the diffusivity on GaAs and (GaIn)(NAs) surfaces. However, applying Sb during GI does not affect the driving force of the structural phase transition. Therefore a fundamental analysis about the incorporation of Sb into GaAs, Ga(NAs) and (GaIn)(NAs) was carried out in the second part of the study. Using a combination of high resolution X-ray diffraction, transmission electron microscopy and SIMS measurements, it was verified that incorporating Sb into (GaIn)(NAs) causes an increase of the In content and a decrease of the N content. In the third part of the study, novel etching methods for the GaP-based material system Ga(NAsP) are introduced which provide the opportunity to analyse structure formation processes on interior interfaces in this material system by AFM. (orig.)

Facile CO cleavage by a multimetallic CsU{sub 2} nitride complex

Energy Technology Data Exchange (ETDEWEB)

Falcone, Marta; Scopelliti, Rosario; Mazzanti, Marinella [Ecole Polytechnique de Federale de Lausanne (EPFL) (Switzerland). Inst. des Sciences et Ingenierie Chimiques; Kefalidis, Christos E.; Maron, Laurent [Toulouse Univ. (France). LPCNO, CNRS et INSA, UPS

2016-09-26

Uranium nitrides are important materials with potential for application as fuels for nuclear power generation, and as highly active catalysts. Molecular nitride compounds could provide important insight into the nature of the uranium-nitride bond, but currently little is known about their reactivity. In this study, we found that a complex containing a nitride bridging two uranium centers and a cesium cation readily cleaved the C≡O bond (one of the strongest bonds in nature) under ambient conditions. The product formed has a [CsU{sub 2}(μ-CN)(μ-O)] core, thus indicating that the three cations cooperate to cleave CO. Moreover, the addition of MeOTf to the nitride complex led to an exceptional valence disproportionation of the CsU{sup IV}-N-U{sup IV} core to yield CsU{sup III}(OTf) and [MeN=U{sup V}] fragments. The important role of multimetallic cooperativity in both reactions is illustrated by the computed reaction mechanisms.

Structure, phonons and related properties in zinc-IV-nitride (IV = silicon, germanium, tin), scandium nitride, and rare-earth nitrides

Science.gov (United States)

Paudel, Tula R.

This thesis presents a study of the phonons and related properties in two sets of nitride compounds, whose properties are until now relatively poorly known. The Zn-IV-N2 group of compounds with the group IV elements Si, Ge and Sn, form a series analogous to the well known III-N nitride series with group III element Al, Ga, In. Structurally, they can be derived by doubling the period of III-V compounds in the plane in two directions and replacing the group-III elements with Zn and a group-IV element in a particular ordered pattern. Even though they are similar to the well-known III-V nitride compounds, the study of the properties of these materials is in its early stages. The phonons in these materials and their relation to the phonons in the corresponding group-III nitrides are of fundamental interest. They are also of practical interest because the phonon related spectra such as infrared absorption and Raman spectroscopy are sensitive to the structural quality of the material and can thus be used to quantify the degree of crystalline perfection of real samples. First-principles calculations of the phonons and related ground state properties of these compounds were carried out using Density Functional Perturbation Theory (DFPT) with the Local Density Approximation (LDA) for exchange and correlation and using a pseudopotential plane wave implementation which was developed by several authors over the last decades. The main focus of our study is on the phonons at the center of the Brillouin zone because the latter are most directly related to commonly used spectroscopies to probe the vibrations in a solid: infrared reflectivity and Raman spectroscopy. For a semiconducting or insulating compound, a splitting occurs between transverse and longitudinal phonons at the Gamma-point because of the long-range nature of electrostatic forces. The concepts required to handle this problem are reviewed. Our discussion emphasizes how the various quantities required are related to

Transferable tight binding model for strained group IV and III-V heterostructures

Science.gov (United States)

Tan, Yaohua; Povolotskyi, Micheal; Kubis, Tillmann; Boykin, Timothy; Klimeck, Gerhard

Modern semiconductor devices have reached critical device dimensions in the range of several nanometers. For reliable prediction of device performance, it is critical to have a numerical efficient model that are transferable to material interfaces. In this work, we present an empirical tight binding (ETB) model with transferable parameters for strained IV and III-V group semiconductors. The ETB model is numerically highly efficient as it make use of an orthogonal sp3d5s* basis set with nearest neighbor inter-atomic interactions. The ETB parameters are generated from HSE06 hybrid functional calculations. Band structures of strained group IV and III-V materials by ETB model are in good agreement with corresponding HSE06 calculations. Furthermore, the ETB model is applied to strained superlattices which consist of group IV and III-V elements. The ETB model turns out to be transferable to nano-scale hetero-structure. The ETB band structures agree with the corresponding HSE06 results in the whole Brillouin zone. The ETB band gaps of superlattices with common cations or common anions have discrepancies within 0.05eV.

The anharmonic phonon decay rate in group-III nitrides

International Nuclear Information System (INIS)

Srivastava, G P

2009-01-01

Measured lifetimes of hot phonons in group-III nitrides have been explained theoretically by considering three-phonon anharmonic interaction processes. The basic ingredients of the theory include full phonon dispersion relations obtained from the application of an adiabatic bond charge model and crystal anharmonic potential within the isotropic elastic continuum model. The role of various decay routes, such as Klemens, Ridley, Vallee-Bogani and Barman-Srivastava channels, in determining the lifetimes of the Raman active zone-centre longitudinal optical (LO) modes in BN (zincblende structure) and A 1 (LO) modes in AlN, GaN and InN (wurtzite structure) has been quantified.

Group III nitride semiconductors for short wavelength light-emitting devices

Science.gov (United States)

Orton, J. W.; Foxon, C. T.

1998-01-01

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so

Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

NARCIS (Netherlands)

Sammak, A.

2012-01-01

Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

Technological development for super-high efficiency solar cells. Technological development for crystalline compound solar cells (high-efficiency III-V tandem solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Kessho kagobutsu taiyo denchi no gijutsu kaihatsu (III-V zoku kagobutsu handotai taiyo denchi no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on technological development of III-V compound semiconductor solar cells in fiscal 1994. (1) On development of epitaxial growth technology of lattice mismatching systems, the optimum structure of InGaAs strain intermediate layers was studied for reducing a dislocation density by lattice mismatching of GaAs layer grown on Si substrate and difference in thermal expansion coefficient. The effect of strain layer on dislocation reduction was found only at 250dyne/cm in strain energy. Growth of GaAs layers on the Si substrate treated by hydrofluoric acid at low temperature was attempted by MBE method. As a dislocation distribution was controlled by laying different atoms at hetero-interface, the dislocation density of growing layer surfaces decreased by concentration of dislocation at hetero-interface. (2) On development of high-efficiency tandem cell structure, tunnel junction characteristics, cell formation process and optimum design method of lattice matching tandem cells were studied, while thin film cell formation was basically studied for lattice mismatching tandem cells. 45 figs., 8 tabs.

Three-Dimensional Reduced Graphene Oxide Coupled with Mn3O4 for Highly Efficient Removal of Sb(III) and Sb(V) from Water.

Science.gov (United States)

Zou, Jian-Ping; Liu, Hui-Long; Luo, Jinming; Xing, Qiu-Ju; Du, Hong-Mei; Jiang, Xun-Heng; Luo, Xu-Biao; Luo, Sheng-Lian; Suib, Steven L

2016-07-20

Highly porous, three-dimensional (3D) nanostructured composite adsorbents of reduced graphene oxides/Mn3O4 (RGO/Mn3O4) were fabricated by a facile method of a combination of reflux condensation and solvothermal reactions and systemically characterized. The as-prepared RGO/Mn3O4 possesses a mesoporous 3D structure, in which Mn3O4 nanoparticles are uniformly deposited on the surface of the reduced graphene oxide. The adsorption properties of RGO/Mn3O4 to antimonite (Sb(III)) and antimonate (Sb(V)) were investigated using batch experiments of adsorption isotherms and kinetics. Experimental results show that the RGO/Mn3O4 composite has fast liquid transport and superior adsorption capacity toward antimony (Sb) species in comparison to six recent adsorbents reported in the literature and summarized in a table in this paper. Theoretical maximum adsorption capacities of RGO/Mn3O4 toward Sb(III) and Sb(V) are 151.84 and 105.50 mg/g, respectively, modeled by Langmuir isotherms. The application of RGO/Mn3O4 was demonstrated by using drinking water spiked with Sb (320 μg/L). Fixed-bed column adsorption experiments indicate that the effective breakthrough volumes were 859 and 633 mL bed volumes (BVs) for the Sb(III) and Sb(V), respectively, until the maximum contaminant level of 5 ppb was reached, which is below the maximum limits allowed in drinking water according to the most stringent regulations. The advantages of being nontoxic, highly stable, and resistant to acid and alkali and having high adsorption capacity toward Sb(III) and Sb(V) confirm the great potential application of RGO/Mn3O4 in Sb-spiked water treatment.

High efficiency nitride based phosphores for white LEDs

NARCIS (Netherlands)

Li, Yuan Qiang; Hintzen, H.T.J.M.

2008-01-01

In this overview paper, novel rare-earth doped silicon nitride based phosphors for white LEDs applications have been demonstrated. The luminescence properties of orange-red-emitting phosphors (M2Si5N8:Eu2+) and green-to-yellow emitting phosphors (MSi2N2O2:Eu2+, M = Ca, Sr, Ba) are discussed in

Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

Energy Technology Data Exchange (ETDEWEB)

Campbell, Philip M., E-mail: philip.campbell@gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States); Tarasov, Alexey; Joiner, Corey A.; Vogel, Eric M. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Ready, W. Jud [Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)

2016-01-14

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

Science.gov (United States)

Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Ready, W. Jud; Vogel, Eric M.

2016-01-01

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

Semiconducting III-V compounds

CERN Document Server

Hilsum, C; Henisch, Heinz R

1961-01-01

Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

Transformational III-V Electronics

KAUST Repository

Nour, Maha A.

2014-01-01

Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

Science.gov (United States)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

2016-02-10

Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

Directory of Open Access Journals (Sweden)

Katsuaki Tanabe

2009-07-01

Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

Removal of Sb(III and Sb(V by Ferric Chloride Coagulation: Implications of Fe Solubility

Directory of Open Access Journals (Sweden)

Muhammad Ali Inam

2018-04-01

Full Text Available Coagulation and precipitation appear to be the most efficient and economical methods for the removal of antimony from aqueous solution. In this study, antimony removal from synthetic water and Fe solubility with ferric chloride (FC coagulation has been investigated. The effects of pH, FC dosage, initial antimony loading and mixed Sb(III, Sb(V proportions on Fe solubility and antimony removal were studied. The results showed that the Sb(III removal efficiency increased with the increase of solution pH particularly due to an increase in Fe precipitation. The Sb(V removal was influenced by the solution pH due to a change in Fe solubility. However, the Fe solubility was only impaired by the Sb(III species at optimum pH 7. The removal efficiencies of both Sb species were enhanced with an increase in FC dose. The quantitative analysis of the isotherm study revealed the strong adsorption potential of Sb(III on Fe precipitates as compared to Sb(V. Furthermore, the removal behavior of antimony was inhibited in mixed proportion with high Sb(V fraction. In conclusion, this study contributes to better understanding the fate of Sb species, their mobilities, and comparative removal behavior, with implications for Fe solubility using ferric chloride in different aqueous environments.

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

Science.gov (United States)

Wang, T.

2016-09-01

The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

Hard template synthesis of porous carbon nitride materials with improved efficiency for photocatalytic CO_2 utilization

International Nuclear Information System (INIS)

Ovcharov, M.; Shcherban, N.; Filonenko, S.; Mishura, A.; Skoryk, M.; Shvalagin, V.; Granchak, V.

2015-01-01

Graphical abstract: - Highlights: • Porous carbon nitrides were obtained via bulk and matrix pyrolysis of melamine. • Carbon nitride obtained in MCF has the highest bandgap and photocatalytic activity. • Acetaldehyde was the major product of the photoreduction reaction of CO2. - Abstract: Porous carbon nitrides of different morphology were obtained via bulk and hard template (SBA-15 and MCF) pyrolysis of melamine. Matrix method allowed obtaining ordered porous C_3N_4 with higher bandgap (2.87 eV) in the contrary to the bulk sample (2.45 eV). Obtained carbon nitrides were found to be p-type semiconductors with catalytic activity towards photoreduction of carbon dioxide with water vapour. Carbon nitride obtained in MCF has the higher bandgap, developed surface, sponge-like morphology, spatially ordering and it's characterized by the highest photocatalytic activity.

Are Fe and Co implanted ZnO and III-nitride semiconductors magnetic?

CERN Document Server

AUTHOR|(CDS)2081284; Bharuth-Ram, Krish

The chemical nature, lattice site locations and magnetic behaviour of Fe and/or Co ions implanted in nitrides (GaN, AlN, and InN) and in ZnO have been investigated using Mössbauer spectroscopy and vibrating sample magnetometer (VSM) techniques. Mössbauer data on nitride and $^{56}$Fe pre-implanted ZnO samples were obtained from emission Mössbauer spectroscopy (eMS) measurements at the ISOLDE facility, CERN, following the implantation of radioactive $^{57}$Mn$^{*}$ which $\\beta$$^{-}$decays to the 14.4 keV Mössbauer state of $^{57}$Fe. In addition, conversion electron Mössbauer spectroscopy (CEMS) data were collected on ZnO single crystals co-implanted with $^{57}$Fe + $^{56}$Fe and $^{57}$Fe + $^{59}$Co ions in a box profile. Emission Mössbauer spectra obtained for GaN and AlN reveal magnetic structure in the ‘wings’ assigned to high spin Fe$^{3+}$ weakly coupled to the lattice showing spin-lattice relaxation effects. The observed spin-relaxation rate (τ$^{-1}$) closely follows a ${T}^{2}$ temperat...

Fabrication of vanadium nitride by carbothermal nitridation reaction

International Nuclear Information System (INIS)

Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

2005-01-01

Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

Zr{sub 2}N{sub 2}Se. The first zirconium(IV) nitride selenide by the oxidation of zirconium(III) nitride with selenium

Energy Technology Data Exchange (ETDEWEB)

Lissner, Falk; Hack, Bettina; Schleid, Thomas [Institute for Inorganic Chemistry, University of Stuttgart (Germany); Lerch, Martin [Institute for Chemistry, Technical University of Berlin (Germany)

2012-08-15

The oxidation of zirconium(III) nitride (ZrN) with suitable amounts of selenium (Se) in the presence of sodium chloride (NaCl) as flux yields small yellow brownish platelets of the first zirconium(IV) nitride selenide with the composition Zr{sub 2}N{sub 2}Se. The new compound crystallizes in the hexagonal space group P6{sub 3}/mmc (no. 194) with a = 363.98(2) pm, c = 1316.41(9) pm (c/a = 3.617) and two formula units per unit cell. The crystallographically unique Zr{sup 4+} cations are surrounded by three selenide and four nitride anions in the shape of a capped trigonal antiprism. The Se{sup 2-} anions are coordinated by six Zr{sup 4+} cations as trigonal prism and the N{sup 3-} anions reside in tetrahedral surrounding of Zr{sup 4+} cations. These [NZr{sub 4}]{sup 13+} tetrahedra become interconnected via three edges each to form {sup 2}{sub ∞}{[(NZr_4_/_4)_2]"2"+} double layers parallel to the (001) plane, which are held together by monolayers of Se{sup 2-} anions. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nano-particulate Aluminium Nitride/Al: An Efficient and Versatile Heterogeneous Catalyst for the Synthesis of Biginelli Scaffolds

Science.gov (United States)

Tekale, S. U.; Tekale, A. B.; Kanhe, N. S.; Bhoraskar, S. V.; Pawar, R. P.

2011-12-01

Nano-particulate aluminium nitride/Al (7:1) is reported as a new heterogeneous solid acid catalyst for the synthesis of 3, 4-dihydroxypyrimidi-2-(1H)-ones and their sulphur analogues using the Biginelli reaction. This method involves short reaction time, easy separation, high yields and purity of products.

Gallium Nitride Schottky betavoltaic nuclear batteries

International Nuclear Information System (INIS)

Lu Min; Zhang Guoguang; Fu Kai; Yu Guohao; Su Dan; Hu Jifeng

2011-01-01

Research highlights: → Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. → Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. → The limited performance is due to thin effective energy deposition layer. → The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 ( 63 Ni), which emits β particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm -2 . The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the β particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

CVD mechanism of pyrolytic boron nitride

International Nuclear Information System (INIS)

Tanji, H.; Monden, K.; Ide, M.

1987-01-01

Pyrolytic boron nitride (P-BN) has become a essential material for III-V compound semiconductor manufacturing process. As the demand from electronics industry for larger single crystals increases, the demand for larger and more economical P-BN components is growing rapidly. P-BN is manufactured by low pressure CVD using boron-trihalides and ammonia as the reactants. In spite that P-BN has been in the market for quite a long time, limited number of fundamental studies regarding the kinetics and the formation mechanism of P-BN have been reported. As it has been demonstrated in CVD of Si, knowledge and both theoretical and empirical modeling of CVD process can be applied to improve the deposition technology and to give more uniform deposition with higher efficiency, and it should also apply to the deposition of P-BN

High-efficient production of boron nitride nanosheets via an optimized ball milling process for lubrication in oil.

Science.gov (United States)

Deepika; Li, Lu Hua; Glushenkov, Alexey M; Hait, Samik K; Hodgson, Peter; Chen, Ying

2014-12-03

Although tailored wet ball milling can be an efficient method to produce a large quantity of two-dimensional nanomaterials, such as boron nitride (BN) nanosheets, milling parameters including milling speed, ball-to-powder ratio, milling ball size and milling agent, are important for optimization of exfoliation efficiency and production yield. In this report, we systematically investigate the effects of different milling parameters on the production of BN nanosheets with benzyl benzoate being used as the milling agent. It is found that small balls of 0.1-0.2 mm in diameter are much more effective in exfoliating BN particles to BN nanosheets. Under the optimum condition, the production yield can be as high as 13.8% and the BN nanosheets are 0.5-1.5 μm in diameter and a few nanometers thick and of relative high crystallinity and chemical purity. The lubrication properties of the BN nanosheets in base oil have also been studied. The tribological tests show that the BN nanosheets can greatly reduce the friction coefficient and wear scar diameter of the base oil.

Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

2016-01-01

We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-01-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the Ga

Direct immobilization and hybridization of DNA on group III nitride semiconductors

Energy Technology Data Exchange (ETDEWEB)

Xu Xiaobin; Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh; Bergkvist, Magnus [College of Nanoscale Science and Engineering, University at Albany (SUNY), 255 Fuller Road, Albany, NY 12203 (United States); Cady, Nathaniel C. [College of Nanoscale Science and Engineering, University at Albany (SUNY), 255 Fuller Road, Albany, NY 12203 (United States)], E-mail: ncady@uamail.albany.edu

2009-03-15

A key concern for group III-nitride high electron mobility transistor (HEMT) biosensors is the anchoring of specific capture molecules onto the gate surface. To this end, a direct immobilization strategy was developed to attach single-stranded DNA (ssDNA) to AlGaN surfaces using simple printing techniques without the need for cross-linking agents or complex surface pre-functionalization procedures. Immobilized DNA molecules were stably attached to the AlGaN surfaces and were able to withstand a range of pH and ionic strength conditions. The biological activity of surface-immobilized probe DNA was also retained, as demonstrated by sequence-specific hybridization experiments. Probe hybridization with target ssDNA could be detected by PicoGreen fluorescent dye labeling with a minimum detection limit of 2 nM. These experiments demonstrate a simple and effective immobilization approach for attaching nucleic acids to AlGaN surfaces which can further be used for the development of HEMT-based DNA biosensors.

Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

International Nuclear Information System (INIS)

Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J.

2014-01-01

In this work, we attempt to reveal the underlying mechanisms of divergent V TH -thermal-stabilities in III-nitride metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) and MOS-Channel-HEMT (MOSC-HEMT). In marked contrast to MOSC-HEMT featuring temperature-independent V TH , MIS-HEMT with the same high-quality gate-dielectric/III-nitride interface and similar interface trap distribution exhibits manifest thermally induced V TH shift. The temperature-dependent V TH of MIS-HEMT is attributed to the polarized III-nitride barrier layer, which spatially separates the critical gate-dielectric/III-nitride interface from the channel and allows “deeper” interface trap levels emerging above the Fermi level at pinch-off. This model is further experimentally validated by distinct V G -driven Fermi level movements at the critical interfaces in MIS-HEMT and MOSC-HEMT. The mechanisms of polarized III-nitride barrier layer in influencing V TH -thermal-stability provide guidelines for the optimization of insulated-gate III-nitride power switching devices

Th(As(III)4As(V)4O18): a mixed-valent oxoarsenic(III)/arsenic(V) actinide compound obtained under extreme conditions.

Science.gov (United States)

Yu, Na; Klepov, Vladislav V; Kegler, Philip; Bosbach, Dirk; Albrecht-Schmitt, Thomas E; Alekseev, Evgeny V

2014-08-18

A high-temperature/high-pressure method was employed to investigate phase formation in the Th(NO3)4·5H2O-As2O3-CsNO3 system. It was observed that an excess of arsenic(III) in starting system leads to the formation of Th(As(III)4As(V)4O18), which is representative of a rare class of mixed-valent arsenic(III)/arsenic(V) compounds. This compound was studied with X-ray diffraction, energy-dispersive X-ray, and Raman spectroscopy methods. Crystallographic data show that Th(As(III)4As(V)4O18) is built from (As(III)4As(V)4O18)(4-) layers connected through Th atoms. The arsenic layers are found to be isoreticular to those in previously reported As2O3 and As3O5(OH), and the geometric differences between them are discussed. Bands in the Raman spectrum are assigned with respect to the presence of AsO3 and AsO4 groups.

Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

KAUST Repository

El Afandy, Rami

2011-01-01

Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes

Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

KAUST Repository

Smirnov, A. M.; Young, E. C.; Bougrov, V. E.; Speck, J. S.; Romanov, A. E.

2016-01-01

We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown

Analysis of novel silicon and III-V solar cells by simulation and experiment; Analyse neuartiger Silizium- und III-V-Solarzellen mittels Simulation und Experiment

Energy Technology Data Exchange (ETDEWEB)

Hermle, Martin

2008-11-27

This work presents various simulation studies of silicon and III-V solar cells. For standard silicon solar cells, one of the critical parameters to obtain good performance, is the rear side recombination velocity. The optical and electrical differences of the different cell structures were determined. The optical differences and the effective recombination velocity Sback of the different rear side structures for 1 Ohmcm material were extracted. Beside standard silicon solar cells, back junction silicon solar cells were investigated. Especially the influence of the front surface field and the electrical shading due to the rear side, was investigated. In the last two chapters, III-V solar cells were analysed. For the simulation of III-V multi-junction solar cells, the simulation of the tunneldiode is the basic prerequisite. In this work, the numerical calibration of an GaAs tunneldiode was achieved by using an non-local tunnel model. Using this model, it was possible to successfully simulate a III-V tandem solar cell. The last chapter deals with an optimization of the III-V 3-junction cell for space applications. Especially the influence of the GaAs middle cell was investigated. Due to structural changes, the end-of-life efficiency was drastically increased.

A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

NARCIS (Netherlands)

Zomer, P. J.; Dash, S. P.; Tombros, N.; van Wees, B. J.

2011-01-01

We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early

Electronic properties of III-nitride semiconductors: A first-principles investigation using the Tran-Blaha modified Becke-Johnson potential

International Nuclear Information System (INIS)

Araujo, Rafael B.; Almeida, J. S. de; Ferreira da Silva, A.

2013-01-01

In this work, we use density functional theory to investigate the influence of semilocal exchange and correlation effects on the electronic properties of III-nitride semiconductors considering zinc-blende and wurtzite crystal structures. We find that the inclusion of such effects through the use of the Tran-Blaha modified Becke-Johnson potential yields an excellent description of the electronic structures of these materials giving energy band gaps which are systematically larger than the ones obtained with standard functionals such as the generalized gradient approximation. The discrepancy between the experimental and theoretical band gaps is then significantly reduced with semilocal exchange and correlation effects. However, the effective masses are overestimated in the zinc-blende nitrides, but no systematic trend is found in the wurtzite compounds. New results for energy band gaps and effective masses of zinc-blende and wurtzite indium nitrides are presented

Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

KAUST Repository

Smirnov, A. M.

2016-01-20

We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.

III-V microelectronics

CERN Document Server

Nougier, JP

1991-01-01

As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental p

Enhanced optical nonlinearities in the near-infrared using III-nitride heterostructures coupled to metamaterials

International Nuclear Information System (INIS)

Wolf, Omri; Ma, Xuedan; Brener, Igal; Allerman, Andrew A.; Wendt, Joel R.; Shaner, Eric A.; Song, Alex Y.

2015-01-01

We use planar metamaterial resonators to enhance by more than two orders of magnitude the near infrared second harmonic generation obtained from intersubband transitions in III-Nitride heterostructures. The improvement arises from two factors: employing an asymmetric double quantum well design and aligning the resonators' cross-polarized resonances with the intersubband transition energies. The resulting nonlinear metamaterial operates at wavelengths where single photon detection is available, and represents a different class of sources for quantum photonics related phenomena

Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

Energy Technology Data Exchange (ETDEWEB)

Winter, Andreas

2009-07-23

Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

Energy Technology Data Exchange (ETDEWEB)

Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2014-12-01

In this work, we attempt to reveal the underlying mechanisms of divergent V{sub TH}-thermal-stabilities in III-nitride metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) and MOS-Channel-HEMT (MOSC-HEMT). In marked contrast to MOSC-HEMT featuring temperature-independent V{sub TH}, MIS-HEMT with the same high-quality gate-dielectric/III-nitride interface and similar interface trap distribution exhibits manifest thermally induced V{sub TH} shift. The temperature-dependent V{sub TH} of MIS-HEMT is attributed to the polarized III-nitride barrier layer, which spatially separates the critical gate-dielectric/III-nitride interface from the channel and allows “deeper” interface trap levels emerging above the Fermi level at pinch-off. This model is further experimentally validated by distinct V{sub G}-driven Fermi level movements at the critical interfaces in MIS-HEMT and MOSC-HEMT. The mechanisms of polarized III-nitride barrier layer in influencing V{sub TH}-thermal-stability provide guidelines for the optimization of insulated-gate III-nitride power switching devices.

Transformational III-V Electronics

KAUST Repository

Nour, Maha A.

2014-04-01

Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors

Science.gov (United States)

Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.

2017-07-01

Hexagonal boron nitride (h-BN) detectors have demonstrated the highest thermal neutron detection efficiency to date among solid-state neutron detectors at about 51%. We report here the realization of h-BN neutron detectors possessing one order of magnitude enhancement in the detection area but maintaining an equal level of detection efficiency of previous achievement. These 3 mm × 3 mm detectors were fabricated from 50 μm thick freestanding and flexible 10B enriched h-BN (h-10BN) films, grown by metal organic chemical vapor deposition followed by mechanical separation from sapphire substrates. Mobility-lifetime results suggested that holes are the majority carriers in unintentionally doped h-BN. The detectors were tested under thermal neutron irradiation from californium-252 (252Cf) moderated by a high density polyethylene moderator. A thermal neutron detection efficiency of ˜53% was achieved at a bias voltage of 200 V. Conforming to traditional solid-state detectors, the realization of h-BN epilayers with enhanced electrical transport properties is the key to enable scaling up the device sizes. More specifically, the present results revealed that achieving an electrical resistivity of greater than 1014 Ωṡcm and a leakage current density of below 3 × 10-10 A/cm2 is needed to fabricate large area h-BN detectors and provided guidance for achieving high sensitivity solid state neutron detectors based on h-BN.

Fatigue improvement in low temperature plasma nitrided Ti–6Al–4V alloy

Energy Technology Data Exchange (ETDEWEB)

Farokhzadeh, K.; Edrisy, A., E-mail: edrisy@uwindsor.ca

2015-01-03

In this study a low temperature (600 °C) treatment was utilized to improve the fatigue performance of plasma nitrided Ti–6Al–4V alloy by optimization of microstructure. In order to study the fatigue properties, rotation bending tests were conducted, the S–N curves were constructed, and the results were compared with those obtained by an elevated temperature treatment (900 °C) as well as conventional gas/plasma nitriding treatments reported in literature. The plasma nitrided alloy at 600 °C showed an endurance limit of 552 MPa which was higher than those achieved by conventional nitriding treatments performed at 750–1100 °C. In contrast, plasma nitriding at 900 °C resulted in the reduction of fatigue life by at least two orders of magnitude compared to the 600 °C treatment, accompanied by a 13% reduction of tensile strength and a 78% reduction of ductility. The deterioration of mechanical properties after the elevated temperature treatment was attributed to the formation of a thick compound layer (∼6 µm) on the surface followed by an α-Case (∼20 µm) and phase transformation in the bulk microstructure from fully equiaxed to bimodal with coarse grains (∼5 times higher average grain size value). The microstructure developed at 600 °C consisted of a thin compound layer (<2 µm) and a deep nitrogen diffusion zone (∼45 µm) while the bulk microstructure was maintained with only 40% grain growth. The micromechanisms of fatigue failures were identified by examination of the fracture surfaces under a scanning electron microscope (SEM). It was found that fatigue failure in the plasma nitrided alloy initiated from the surface in the low cycle region (N≤10{sup 5} cycles) and propagated in a ductile manner leading to the final rupture. No failures were observed in the high cycle region (N>10{sup 5} cycles) and the nitrided alloy endured cyclic loading until the tests were stopped at 10{sup 7} cycles. The thin morphology of the compound layer in this

Fatigue improvement in low temperature plasma nitrided Ti–6Al–4V alloy

International Nuclear Information System (INIS)

Farokhzadeh, K.; Edrisy, A.

2015-01-01

In this study a low temperature (600 °C) treatment was utilized to improve the fatigue performance of plasma nitrided Ti–6Al–4V alloy by optimization of microstructure. In order to study the fatigue properties, rotation bending tests were conducted, the S–N curves were constructed, and the results were compared with those obtained by an elevated temperature treatment (900 °C) as well as conventional gas/plasma nitriding treatments reported in literature. The plasma nitrided alloy at 600 °C showed an endurance limit of 552 MPa which was higher than those achieved by conventional nitriding treatments performed at 750–1100 °C. In contrast, plasma nitriding at 900 °C resulted in the reduction of fatigue life by at least two orders of magnitude compared to the 600 °C treatment, accompanied by a 13% reduction of tensile strength and a 78% reduction of ductility. The deterioration of mechanical properties after the elevated temperature treatment was attributed to the formation of a thick compound layer (∼6 µm) on the surface followed by an α-Case (∼20 µm) and phase transformation in the bulk microstructure from fully equiaxed to bimodal with coarse grains (∼5 times higher average grain size value). The microstructure developed at 600 °C consisted of a thin compound layer (<2 µm) and a deep nitrogen diffusion zone (∼45 µm) while the bulk microstructure was maintained with only 40% grain growth. The micromechanisms of fatigue failures were identified by examination of the fracture surfaces under a scanning electron microscope (SEM). It was found that fatigue failure in the plasma nitrided alloy initiated from the surface in the low cycle region (N≤10 5 cycles) and propagated in a ductile manner leading to the final rupture. No failures were observed in the high cycle region (N>10 5 cycles) and the nitrided alloy endured cyclic loading until the tests were stopped at 10 7 cycles. The thin morphology of the compound layer in this study restricted

a Novel Method for Improving Plasma Nitriding Efficiency: Pre-Magnetization by DC Magnetic Field

Science.gov (United States)

Kovaci, Halim; Yetim, Ali Fatih; Bozkurt, Yusuf Burak; Çelik, Ayhan

2017-06-01

In this study, a novel pre-magnetization process, which enables easy diffusion of nitrogen, was used to enhance plasma nitriding efficiency. Firstly, magnetic fields with intensities of 1500G and 2500G were applied to the untreated samples before nitriding. After the pre-magnetization, the untreated and pre-magnetized samples were plasma nitrided for 4h in a gas mixture of 50% N2-50% H2 at 500∘C and 600∘C. The structural, mechanical and morphological properties of samples were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), microhardness tester and surface tension meter. It was observed that pre-magnetization increased the surface energy of the samples. Therefore, both compound and diffusion layer thicknesses increased with pre-magnetization process before nitriding treatment. As modified layer thickness increased, higher surface hardness values were obtained.

Concomitant glenohumeral pathologies in high-grade acromioclavicular separation (type III - V).

Science.gov (United States)

Markel, Jochen; Schwarting, Tim; Malcherczyk, Dominik; Peterlein, Christian-Dominik; Ruchholtz, Steffen; El-Zayat, Bilal Farouk

2017-11-10

Acromioclavicular joint (ACJ) dislocations are common injuries of the shoulder associated with physical activity. The diagnosis of concomitant injuries proves complicated due to the prominent clinical symptoms of acute ACJ dislocation. Because of increasing use of minimally invasive surgery techniques concomitant pathologies are diagnosed more often than with previous procedures. The aim of this study was to identify the incidence of concomitant intraarticular injuries in patients with high-grade acromioclavicular separation (Rockwood type III - V) as well as to reveal potential risk constellations. The concomitant pathologies were compiled during routine arthroscopically assisted treatment in altogether 163 patients (147 male; 16 female; mean age 36.8 years) with high-grade acromioclavicular separation (Rockwood type III: n = 60; Rockwood type IV: n = 6; Rockwood type V: n = 97). Acromioclavicular separation occurred less often in women than men (1:9). In patients under 35, the most common cause for ACJ dislocation was sporting activity (37.4%). Rockwood type V was observed significantly more often than the other types with 57.5% (Rockwood type III = 36.8%, Rockwood type IV 3.7%). Concomitant pathologies were diagnosed in 39.3% of the patients with that number rising to as much as 57.3% in patients above 35 years. Most common associated injuries were rotator cuff injuries (32.3%), chondral defects (30.6%) and SLAP-lesions (22.6%). Of all patients, 8.6% needed additional reconstructive surgery. Glenohumeral injuries are a much more common epiphenomenon during acromioclavicular separation than previously ascertained. High risk group for accompanying injuries are patients above 35 years with preexisting degenerative disease. The increasing use of minimally invasive techniques allows for an easier diagnosis and simultaneous treatment of the additional pathologies.

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Science.gov (United States)

Freeman, Jon C.

2003-01-01

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Microstructures of group III-nitrides after implantation with gallium

International Nuclear Information System (INIS)

Kench, P.J.

2001-05-01

High doses of gallium have been implanted into layers of aluminium nitride (AIN), indium nitride (InN) and amorphous silicon nitride (a-SiN x ) in an attempt to bond gallium with nitrogen and form binary or ternary alloys. The microstructure of the resultant layers have been characterised using, principally, transmission electron microscopy and X-ray photoelectron spectroscopy. The implantation of a high dose of Ga ions into AIN was successful in synthesising a GaN/GaAlN compound. The resultant layers were largely uniform but contained aluminium precipitates near the surface. These precipitates were pure Al and were most common in the region associated with the maximum Ga concentration. Deconvolution of X-ray photoelectron spectroscopy peaks indicated that Ga existed in a number of chemical states, including the nitride. Electron diffraction patterns from the implanted layers were closely indexed to both AIN and GaN. A further N implant was used to reduce the concentration of the aluminium precipitates and increase the concentration of GaN bonds. The yield of Ga-N bonds dramatically increased and a reduction in the concentration of Al precipitates was observed. Laser and thermal annealing was performed on the implanted AIN substrates. The near surface regions of the implanted specimens appeared to free of precipitates and bubbles. Laser annealing did have a noticeable effect on the electrical and optical properties of the layers. After laser annealing the conductivity of the Ga implanted layer was lower, indicating that the quality of the material had improved. PL measurements showed that a new PL peak at 2.6 eV appeared after laser annealing. It has been found that implanting InN with gallium can yield Ga-N bonds. However, Ga implants into InN were not as successful at synthesising GaN compounds as those by implanting Ga into AIN, due to the low thermal stability of InN. The implanted InN layers were very irregular and contained large indium precipitates and

Critical study of high efficiency deep grinding

OpenAIRE

Johnstone, lain

2002-01-01

The recent years, the aerospace industry in particular has embraced and actively pursued the development of stronger high performance materials, namely nickel based superalloys and hardwearing steels. This has resulted in a need for a more efficient method of machining, and this need was answered with the advent of High Efficiency Deep Grinding (HEDG). This relatively new process using Cubic Boron Nitride (CBN) electroplated grinding wheels has been investigated through experim...

Hot carrier dynamics in plasmonic transition metal nitrides

Science.gov (United States)

Habib, Adela; Florio, Fred; Sundararaman, Ravishankar

2018-06-01

Extraction of non-equilibrium hot carriers generated by plasmon decay in metallic nano-structures is an increasingly exciting prospect for utilizing plasmonic losses, but the search for optimum plasmonic materials with long-lived carriers is ongoing. Transition metal nitrides are an exciting class of new plasmonic materials with superior thermal and mechanical properties compared to conventional noble metals, but their suitability for plasmonic hot carrier applications remains unknown. Here, we present fully first principles calculations of the plasmonic response, hot carrier generation and subsequent thermalization of all group IV, V and VI transition metal nitrides, fully accounting for direct and phonon-assisted transitions as well as electron–electron and electron–phonon scattering. We find the largest frequency ranges for plasmonic response in ZrN, HfN and WN, between those of gold and silver, while we predict strongest absorption in the visible spectrum for the VN, NbN and TaN. Hot carrier generation is dominated by direct transitions for most of the relevant energy range in all these nitrides, while phonon-assisted processes dominate only below 1 eV plasmon energies primarily for the group IV nitrides. Finally, we predict the maximum hot carrier lifetimes to be around 10 fs for group IV and VI nitrides, a factor of 3–4 smaller than noble metals, due to strong electron–phonon scattering. However, we find longer carrier lifetimes for group V nitrides, comparable to silver for NbN and TaN, while exceeding 100 fs (twice that of silver) for VN, making them promising candidates for efficient hot carrier extraction.

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

Science.gov (United States)

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

Science.gov (United States)

Williams, Logan; Kioupakis, Emmanouil

2017-11-01

InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, high-efficiency visible LEDs with thick active regions. In this work, we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75-3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.

Efficient removal of UDMH from dilute nitride MOCVD exhaust streams

Science.gov (United States)

Pahle, Jörg; Czerniak, Mike; Seeley, Andy; Baker, Derek

2004-12-01

Unsymmetrical dimethyl hydrazine (UDMH) (CH 3) 2N 2H 2 is often used in the deposition of dilute nitride semiconductors because it provides a source of nitrogen with a low thermal decomposition temperature (Temperature-dependent carrier lifetime in GaNAs using resonant-coupled photoconductive decay, NCPV Program Review Meeting, Lakewood, Colorado, 14-17 October, 2001). The problems with using this material, however, are its significant toxicity (0.01 ppm compared to ammonia's 25 ppm) and also the fact that it blocks the action of conventional dosed wet scrubbers sometimes used on nitride applications, resulting in diminished efficiency in removing arsine (the source of arsenic), and arsine being similarly toxic (TLV of 0.05 ppm). Efficient removal of UDMH, AsH 3 and hydrogen (which, though not toxic poses a potential safety hazard) by means of a combined thermal oxidation reaction and wet scrubber in series is described at input gas flow rates exceeding those typically encountered in practice. The detection technique employed was Fourier transform infra red spectroscopy (FTIR), and the calibration and resolution techniques will be described. For input UDMH flows of up to 445 sccm (i.e. 1.85×10 -2 mol/min), destructive reaction efficiencies (DREs) of >99.9% were demonstrated, corresponding to the background detection resolution of 0.4 ppm.

Nitriding of high speed steel

International Nuclear Information System (INIS)

Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

2010-01-01

Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

Progress in the development of metamorphic multi-junction III-V space solar cells

Energy Technology Data Exchange (ETDEWEB)

Sinharoy, S.; Patton, M.O.; Valko, T.M.; Weizer, V.G. [Essential Research Inc., Cleveland, OH (United States)

2002-07-01

Theoretical calculations have shown that highest-efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single-junction 1.1 and 1.2 eV InGaAs solar cells, interest has grown in the development of multi-junction cells of this type, using graded buffer layer technology. Essential Research Incorporated (ERI) is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AMO), one-sun efficiency of 27%, and 100-sun efficiency of 31.1%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort involves the development of a 2.1 eV A1GaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AMO efficiency 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. For the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper. (author)

Synthesis of nanoscale copper nitride thin film and modification of the surface under high electronic excitation.

Science.gov (United States)

Ghosh, S; Tripathi, A; Ganesan, V; Avasthi, D K

2008-05-01

Nanoscale (approximately 90 nm) Copper nitride (Cu3N) films are deposited on borosilicate glass and Si substrates by RF sputtering technique in the reactive environment of nitrogen gas. These films are irradiated with 200 MeV Au15+ ions from Pelletron accelerator in order to modify the surface by high electronic energy deposition of heavy ions. Due to irradiation (i) at incident ion fluence of 1 x 10(12) ions/cm2 enhancement of grains, (ii) at 5 x 10912) ions/cm2 mass transport on the films surface, (iii) at 2 x 10(13) ions/cm2 line-like features on Cu3N/glass and nanometallic structures on Cu3N/Si surface are observed. The surface morphology is examined by atomic force microscope (AFM). All results are explained on the basis of a thermal spike model of ion-solid interaction.

Surface passivation technology for III-V semiconductor nanoelectronics

International Nuclear Information System (INIS)

Hasegawa, Hideki; Akazawa, Masamichi

2008-01-01

The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

Highly efficient red phosphorescent Ir(III) complexes for organic light- emitting diodes based on aryl(6-arylpyridin-3-yl)methanone ligands

Energy Technology Data Exchange (ETDEWEB)

Kang, Hyun Ju; Lee, Kum Hee [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Lee, Seok Jae; Seo, Ji Hyun [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@wow.hongik.ac.kr [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

2011-07-29

A series of phosphorescent Ir(III) complexes 1-4 were synthesized based on aryl(6-arylpyridin-3-yl)methanone ligands, and their photophysical and electroluminescent properties were characterized. Multilayer devices with the configuration, Indium tin oxide/4,4',4''-tris(N-(naphthalene-2-yl)-N-phenyl-amino)triphenylamine (60 nm)/4,4'-bis(N-(1-naphthyl)-N-phenylamino)biphenyl (20 nm)/Ir(III) complexes doped in N,N'-dicarbazolyl-4,4'-biphenyl (30 nm, 8%)/2,9-dimethyl-4,7-diphenyl-phenathroline (10 nm)/tris(8-hydroxyquinoline)-aluminum (20 nm)/lithium quinolate (2 nm)/ Al (100 nm), were fabricated. Among these, the device employing complex 2 as a dopant exhibited efficient red emission with a maximum luminance, luminous efficiency, power efficiency and quantum efficiency of 16200 cd/m{sup 2} at 14.0 V, 12.20 cd/A at 20 mA/cm{sup 2}, 4.26 lm/W and 9.26% at 20 mA/cm{sup 2}, respectively, with Commission Internationale de l'Enclairage coordinates of (0.63, 0.37) at 12.0 V.

High-Efficient Low-Cost Photovoltaics Recent Developments

CERN Document Server

Petrova-Koch, Vesselinka; Goetzberger, Adolf

2009-01-01

A bird's-eye view of the development and problems of recent photovoltaic cells and systems and prospects for Si feedstock is presented. High-efficient low-cost PV modules, making use of novel efficient solar cells (based on c-Si or III-V materials), and low cost solar concentrators are in the focus of this book. Recent developments of organic photovoltaics, which is expected to overcome its difficulties and to enter the market soon, are also included.

III-V semiconductor materials and devices

CERN Document Server

Malik, R J

1989-01-01

The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Frentrup, Martin, E-mail: frentrup@physik.tu-berlin.de; Wernicke, Tim; Stellmach, Joachim; Kneissl, Michael [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Hatui, Nirupam; Bhattacharya, Arnab [Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)

2013-12-07

In group-III-nitride heterostructures with semipolar or nonpolar crystal orientation, anisotropic lattice and thermal mismatch with the buffer or substrate lead to a complex distortion of the unit cells, e.g., by shearing of the lattice. This makes an accurate determination of lattice parameters, composition, and strain state under assumption of the hexagonal symmetry impossible. In this work, we present a procedure to accurately determine the lattice constants, strain state, and composition of semipolar heterostructures using high resolution X-ray diffraction. An analysis of the unit cell distortion shows that four independent lattice parameters are sufficient to describe this distortion. Assuming only small deviations from an ideal hexagonal structure, a linear expression for the interplanar distances d{sub hkl} is derived. It is used to determine the lattice parameters from high resolution X-ray diffraction 2ϑ-ω-scans of multiple on- and off-axis reflections via a weighted least-square fit. The strain and composition of ternary alloys are then evaluated by transforming the elastic parameters (using Hooke's law) from the natural crystal-fixed coordinate system to a layer-based system, given by the in-plane directions and the growth direction. We illustrate our procedure taking an example of (112{sup ¯}2) Al{sub κ}Ga{sub 1−κ}N epilayers with Al-contents over the entire composition range. We separately identify the in-plane and out-of-plane strains and discuss origins for the observed anisotropy.

Lattice site location of impurities in group III nitrides using emission channeling

CERN Document Server

De Vries, Bart; Wahl, Ulrich

The group III nitrides comprise the semiconducting materials InN, GaN, AlN and their ternary alloys. During the last decade, GaN has attracted widespread attention due to its large band gap and hardness. These properties, combined with the fact that its band gap can be adjusted by alloying it with InN and AlN, make GaN a suitable material for the fabrication of optical components that operate in the blue to ultraviolet region of the electromagnetic spectrum, and for microwave and high-power applications. Indeed, during the last couple of years, GaN-based blue and violet light-emitting devices (LEDs) and laser diodes have been realized and commercialized: the violet laser diodes will even be the keystone to the next generation of optical data storage standards, Blu-ray and HD-DVD. \\\\ \\\\ A key aspect in device production is the incorporation of dopants that can alter the electronic, magnetic or optical properties of the host material. For example, Si is often used to generate n-type GaN, while Mg is the most fr...

Effect of calcium on adsorptive removal of As(III) and As(V) by iron oxide-based adsorbents

KAUST Repository

Uwamariya, V.

2014-06-25

The effects of calcium on the equilibrium adsorption capacity of As(III) and As(V) onto iron oxide-coated sand (IOCS) and granular ferric hydroxide (GFH) were investigated through batch experiments, rapid small-scale column tests (RSSCT) and kinetics modelling. Batch experiments showed that at calcium concentrations≤20 mg/L, high As(III) and As(V) removal efficiencies by IOCS and GFH are achieved at pH 6. An increase of the calcium concentration to 40 and 80 mg/L reversed this trend, giving higher removal efficiencies at higher pH (8). The adsorption capacities of IOCS and GFH at an equilibrium arsenic concentration of 10 g/L were found to be between 2.0 and 3.1 mg/g for synthetic water without calcium and between 2.8 and 5.3 mg/g when 80 mg/L of calcium was present at the studied pH values. After 10 hours of filter run in RSSCT, approximately 1000 empty bed volumes, the ratios of C/Co for As(V) were 26% and 18% for calcium-free model water; and only 1% and 0.2% after addition of 80 mg/L of Ca for filter columns with IOCS and GFH, respectively. The adsorption of As(III) and As(V) onto GFH follows a second-order reaction, with and without addition of calcium. The adsorption of As(III) and As(V) onto IOCS follows a first-order reaction without calcium addition, and moves to the second-reaction-order kinetics when calcium is added. Based on the intraparticle diffusion model, the main controlling mechanism for As(III) adsorption is intraparticle diffusion, while surface diffusion contributes greatly to the adsorption of As(V).

Research progress of III-V laser bonding to Si

Science.gov (United States)

Bo, Ren; Yan, Hou; Yanan, Liang

2016-12-01

The vigorous development of silicon photonics makes a silicon-based light source essential for optoelectronics' integration. Bonding of III-V/Si hybrid laser has developed rapidly in the last ten years. In the tireless efforts of researchers, we are privileged to see these bonding methods, such as direct bonding, medium adhesive bonding and low temperature eutectic bonding. They have been developed and applied to the research and fabrication of III-V/Si hybrid lasers. Some research groups have made remarkable progress. Tanabe Katsuaki of Tokyo University successfully implemented a silicon-based InAs/GaAs quantum dot laser with direct bonding method in 2012. They have bonded the InAs/GaAs quantum dot laser to the silicon substrate and the silicon ridge waveguide, respectively. The threshold current of the device is as low as 200 A/cm2. Stevan Stanković and Sui Shaoshuai successfully produced a variety of hybrid III-V/Si laser with the method of BCB bonding, respectively. BCB has high light transmittance and it can provide high bonding strength. Researchers of Tokyo University and Peking University have realized III-V/Si hybrid lasers with metal bonding method. We describe the progress in the fabrication of III-V/Si hybrid lasers with bonding methods by various research groups in recent years. The advantages and disadvantages of these methods are presented. We also introduce the progress of the growth of III-V epitaxial layer on silicon substrate, which is also a promising method to realize silicon-based light source. I hope that readers can have a general understanding of this field from this article and we can attract more researchers to focus on the study in this field.

Radio-frequency plasma nitriding and nitrogen plasma immersion ion implantation of Ti-6Al-4V alloy

International Nuclear Information System (INIS)

Wang, S.Y.; Chu, P.K.; Tang, B.Y.; Zeng, X.C.; Wang, X.F.; Chen, Y.B.

1997-01-01

Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly developed inductively coupled RF plasma source which is responsible for the success of the experiments is also described. (orig.)

Development of III-V/Si Multijunction Space Photovoltaics

Data.gov (United States)

National Aeronautics and Space Administration — High substrate costs, as well as weight, typically play a major role in the high costs of multijunction space solar cell production and deployment. III-V/Si...

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

Science.gov (United States)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p

Flow injection spectrophotometric determination of Fe(III) and V(v)

International Nuclear Information System (INIS)

Elrahman, Azza Mohamed

2000-01-01

Phenylflourone was synthesized with the objective of developing a method for determining Fe(III) and V(V) in the pressence of micelles using flow injectoin technique. Phenylflourone showed a wavelength of maximum absorption at 412 nm which was not affected by the presence of miccelles i.e. n-hexadodecylpyridinum bromide and sodium n-dodecylsulphate, but they have different effects on the absorbance of PHF. The example of PHF-Fe(III) and PHF-V(V) showed the wavelength of the maximum absorption at 4428 nm and 412 nm, respectively. Presence of micelles shifted the wavelength of the two complexes to a lower one. Generally the addition of micelles increased the absorbance of phenylflourone metal ions complexes except for PHF-V(V) with hexadodecylpyridinum bromide. With flow injection technique two approaches were practiced the use of micelle as a carrier or water as a carrier. Sodium n-dodecylsulphate increased the absorbance of the two complexes when it was used as a carrier or added to the metal ions using water as carrier. On the other hand, the use of n-hexadodecylpyridinum bromide as carrieer increased the absorbance of the complexes but it decreased the absorbance when it was used in conjunction with metal ions and water as a carrier. After establishing the optimum FI conditions for PHF-Fe(III) and PHF-V(V) complexes, the calibration curves were construction and produced semiliner response in the concentration range studied. Ti(IV) III, Mo(VI) showed a positive interference in PHF-Fe(III) and PHF-V(V) complexes, respectively.(Author)

Point defects in dilute nitride III-N-As and III-N-P

International Nuclear Information System (INIS)

Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

2006-01-01

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As Ga antisites and Ga i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides

Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions

International Nuclear Information System (INIS)

Lin Chenglu; Hemment, P.L.F.; Li Jinhua; Zou Shichang

1994-01-01

Aluminium films with a thickness of 7000 A (containing 0.85% copper) were deposited on silicon substrates. 400 keV N 2 + or 350 keV N + ions were implanted into the aluminium films or at the interface between the aluminium and silicon, respectively. Automatic spreading resistance (ASR), Fourier transform infrared spectroscopy (FTIR) and Rutherford backscattering (RBS) and channelling were used to characterize the formation of aluminium nitride and the depth distribution of the Cu impurity in the aluminium films after ion implantation and post-annealing. The formation of a stoichiometric AlN layer with high resistance was evident from ASR, RBS analysis and FTIR measurements by the presence of the absorption band at 650 cm -1 . When the implanted nitrogen is near the interface between the aluminium and silicon, a multilayer structure can be obtained, which consists of aluminium, aluminium nitride and the silicon substrate. Cu, which is a background impurity in the deposited aluminium films, segregated into the synthesised aluminium nitride during high dose nitrogen ion implantation. This is due to irradiation-induced segregation during ion implantation. (orig.)

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

Low Temperature Gaseous Nitriding of a Stainless Steel Containing Strong Nitride Formers

DEFF Research Database (Denmark)

Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

Low temperature thermochemical surface hardening of the precipitation hardening austenitic stainless steel A286 in solution treated state was investigated. A286 contains, besides high amounts of Cr, also substantial amounts of strong nitride formers as Ti, Al and V. It is shown that simultaneous...

Antisites in III-V semiconductors: Density functional theory calculations

KAUST Repository

Chroneos, A.

2014-07-14

Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III=Al, Ga, and In and V=P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies. © 2014 AIP Publishing LLC.

Simultaneously Enhancing Light Emission and Suppressing Efficiency Droop in GaN Microwire-Based Ultraviolet Light-Emitting Diode by the Piezo-Phototronic Effect.

Science.gov (United States)

Wang, Xingfu; Peng, Wenbo; Yu, Ruomeng; Zou, Haiyang; Dai, Yejing; Zi, Yunlong; Wu, Changsheng; Li, Shuti; Wang, Zhong Lin

2017-06-14

Achievement of p-n homojuncted GaN enables the birth of III-nitride light emitters. Owing to the wurtzite-structure of GaN, piezoelectric polarization charges present at the interface can effectively control/tune the optoelectric behaviors of local charge-carriers (i.e., the piezo-phototronic effect). Here, we demonstrate the significantly enhanced light-output efficiency and suppressed efficiency droop in GaN microwire (MW)-based p-n junction ultraviolet light-emitting diode (UV LED) by the piezo-phototronic effect. By applying a -0.12% static compressive strain perpendicular to the p-n junction interface, the relative external quantum efficiency of the LED is enhanced by over 600%. Furthermore, efficiency droop is markedly reduced from 46.6% to 7.5% and corresponding droop onset current density shifts from 10 to 26.7 A cm -2 . Enhanced electrons confinement and improved holes injection efficiency by the piezo-phototronic effect are revealed and theoretically confirmed as the physical mechanisms. This study offers an unconventional path to develop high efficiency, strong brightness and high power III-nitride light sources.

Turbostratic boron nitride coated on high-surface area metal oxide templates

DEFF Research Database (Denmark)

Klitgaard, Søren Kegnæs; Egeblad, Kresten; Brorson, M.

2007-01-01

Boron nitride coatings on high-surface area MgAl2O4 and Al2O3 have been synthesized and characterized by transmission electron microscopy and by X-ray powder diffraction. The metal oxide templates were coated with boron nitride using a simple nitridation in a flow of ammonia starting from ammonium...

Modification of Low-Alloy Steel Surface by High-Temperature Gas Nitriding Plus Tempering

Science.gov (United States)

Jiao, Dongling; Li, Minsong; Ding, Hongzhen; Qiu, Wanqi; Luo, Chengping

2018-02-01

The low-alloy steel was nitrided in a pure NH3 gas atmosphere at 640 660 °C for 2 h, i.e., high-temperature gas nitriding (HTGN), followed by tempering at 225 °C, which can produce a high property surface coating without brittle compound (white) layer. The steel was also plasma nitriding for comparison. The composition, microstructure and microhardness of the nitrided and tempered specimens were examined, and their tribological behavior investigated. The results showed that the as-gas-nitrided layer consisted of a white layer composed of FeN0.095 phase (nitrided austenite) and a diffusional zone underneath the white layer. After tempering, the white layer was decomposed to a nano-sized (α-Fe + γ'-Fe4N + retained austenite) bainitic microstructure with a high hardness of 1150HV/25 g. Wear test results showed that the wear resistance and wear coefficient yielded by the complex HTGN plus tempering were considerably higher and lower, respectively, than those produced by the conventional plasma nitriding.

Atomistic description of large nanostructures based on III-nitride semiconductors

Energy Technology Data Exchange (ETDEWEB)

Molina-Sanchez, Alejandro; Garcia-Cristobal, Alberto; Cantarero, Andres [Instituto de Ciencia de Materiales de la Universidad de Valencia (Spain); Terentjevs, Aleksandrs; Cicero, Giancarlo [Physics and Materials Science and Chemical Engineering Departments, Politecnico di Torino (Italy)

2010-07-01

Semiconductor nanocolumns exhibiting a growth without dislocations and high crystalline quality are of great interest in nanotechnology applications. Specifically, InN-based nanocolumns are good candidates to develop multi-junction solar cells due to their small gap, 0.67 eV, and the possibility of alloying with other nitrides (as GaN and AlN) to cover the entire solar spectrum. A proper description of optical properties of the nanostructures described above can start with an atomistic treatment of the electronic structure in order to keep the essential geometry and symmetry of the objects. Unfortunately, the best description realized with ab initio electronic structure software is strongly limited by the nanocolumn diameter to a few nanometers. By using a combination of ab initio and empirical tight-binding methods, we can connect the quality of the first principles calculations (performed with the Espresso code), with the versatility of an empirical approach. Once we have an ab initio quality parameter set for the empirical tight-binding code, we can study larger nanostructures with this approach, reducing the computation time in orders of magnitude.

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

Directory of Open Access Journals (Sweden)

Xianshu eLuo

2015-04-01

Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

National Research Council Canada - National Science Library

Holmes, Kenneth

2002-01-01

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

Use of aluminum nitride to obtain temperature measurements in a high temperature and high radiation environment

Science.gov (United States)

Wernsman, Bernard R.; Blasi, Raymond J.; Tittman, Bernhard R.; Parks, David A.

2016-04-26

An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000.degree. C. and fast (>1 MeV) neutron fluencies of more than 10.sup.18 n/cm.sup.2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.

Cycloadditions to Epoxides Catalyzed by GroupIII-V Transition-Metal Complexes

KAUST Repository

D'Elia, Valerio

2015-05-25

Complexes of groupIII-V transition metals are gaining increasing importance as Lewis acid catalysts for the cycloaddition of dipolarophiles to epoxides. This review examines the latest reports, including homogeneous and heterogeneous applications. The pivotal step for the cycloaddition reactions is the ring opening of the epoxide following activation by the Lewis acid. Two modes of cleavage (C-C versus C-O) have been identified depending primarily on the substitution pattern of the epoxide, with lesser influence observed from the Lewis acid employed. The widely studied cycloaddition of CO2 to epoxides to afford cyclic carbonates (C-O bond cleavage) has been scrutinized in terms of catalytic efficiency and reaction mechanism, showing that unsophisticated complexes of groupIII-V transition metals are excellent molecular catalysts. These metals have been incorporated, as well, in highly performing, recyclable heterogeneous catalysts. Cycloadditions to epoxides with other dipolarophiles (alkynes, imines, indoles) have been conducted with scandium triflate with remarkable performances (C-C bond cleavage). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cycloadditions to Epoxides Catalyzed by GroupIII-V Transition-Metal Complexes

KAUST Repository

D'Elia, Valerio; Pelletier, Jeremie; Basset, Jean-Marie

2015-01-01

Complexes of groupIII-V transition metals are gaining increasing importance as Lewis acid catalysts for the cycloaddition of dipolarophiles to epoxides. This review examines the latest reports, including homogeneous and heterogeneous applications. The pivotal step for the cycloaddition reactions is the ring opening of the epoxide following activation by the Lewis acid. Two modes of cleavage (C-C versus C-O) have been identified depending primarily on the substitution pattern of the epoxide, with lesser influence observed from the Lewis acid employed. The widely studied cycloaddition of CO2 to epoxides to afford cyclic carbonates (C-O bond cleavage) has been scrutinized in terms of catalytic efficiency and reaction mechanism, showing that unsophisticated complexes of groupIII-V transition metals are excellent molecular catalysts. These metals have been incorporated, as well, in highly performing, recyclable heterogeneous catalysts. Cycloadditions to epoxides with other dipolarophiles (alkynes, imines, indoles) have been conducted with scandium triflate with remarkable performances (C-C bond cleavage). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Huffaker, Diana [Univ. of California, Los Angeles, CA (United States); Hubbard, Seth [Rochester Inst. of Technology, NY (United States); Norman, Andrew [National Renewable Energy Lab. (NREL), Golden, CO (United States)

2015-07-31

This project aimed to develop solar cells that can help reduce cost per watt. This work focused on developing solar cells that utilize quantum dot (QD) nanomaterials to provide multijunction solar cell efficiency at the cost of single junction solar cell. We focused on a novel concept known as intermediate band solar cells (IBSC) where an additional energy band is inserted in a single solar cell to accommodate sub-bandgap photons absorption which otherwise are lost through transmission. The additional energy band can be achieved by growing QDs within a solar cell p-n junction. Though numerous studies have been conducted to develop such QD systems, very small improvements in solar energy conversion efficiency have been reported. This is mainly due to non-optimal material parameters such as band gap, band offset etc. In this work, we identified and developed a novel QD material system that meets the requirements of IBSC more closely than the current state-of-the-art technology. To achieve these goals, we focused on three important areas of solar cell design: band structure calculations of new materials, efficient device design for high efficiency, and development of new semiconductor materials. In this project, we focused on III-Sb materials as they possess a wide range of energy bandgaps from 0.2 eV to 2eV. Despite the difficulty involved in realizing these materials, we were successfully developed these materials through a systematic approach. Materials studied in this work are AlAsSb (Aluminum Arsenide Antimonide), InAlAs (Indium Aluminum Arsenide) and InAs (Indium Arsenide). InAs was used to develop QD layers within AlAsSb and InAlAs p-n junctions. As the QDs have very small volume, up to 30 QD layers been inserted into the p-n junction to enhance light absorption. These QD multi-stack devices helped in understanding the challenges associated with the development of quantum dot solar cells. The results from this work show that the quantum dot solar cells indeed

White light-emitting diodes (LEDs) using (oxy)nitride phosphors

International Nuclear Information System (INIS)

Xie, R-J; Hirosaki, N; Sakuma, K; Kimura, N

2008-01-01

(Oxy)nitride phosphors have attracted great attention recently because they are promising luminescent materials for phosphor-converted white light-emitting diodes (LEDs). This paper reports the luminescent properties of (oxy)nitride phosphors in the system of M-Si-Al-O-N (M = Li, Ca or Sr), and optical properties of white LEDs using a GaN-based blue LED and (oxy)nitride phosphors. The phosphors show high conversion efficiency of blue light, suitable emission colours and small thermal quenching. The bichromatic white LEDs exhibit high luminous efficacy (∼55 lm W -1 ) and the multi-phosphor converted white LEDs show high colour rendering index (Ra 82-95). The results indicate that (oxy)nitride phosphors demonstrate their superior suitability to use as down-conversion luminescent materials in white LEDs

Problems and possibilities of development of boron nitride ceramics

International Nuclear Information System (INIS)

Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

1988-01-01

The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

Science.gov (United States)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the

Fabrication of carbide and nitride pellets and the nitride irradiations Niloc 1 and Niloc 2

International Nuclear Information System (INIS)

Blank, H.

1991-01-01

Besides the relatively well-known advanced LMFBR mixed carbide fuel an advanced mixed nitride is also an attractive candidate for the optimised fuel cycle of the European Fast Reactor, but the present knowledge about the nitride is still insufficient and should be raised to the level of the carbide. For such an optimised fuel cycle the following general conditions have been set up for the fuel: (i) the burnup of the optimised MN and MC should be at least 15 a/o or even beyond, at moderate linear ratings of less than 75 kW/m (ii) the fuel will be used in a He-bonding pin concept and (iii) as far as available an advanced economic pellet fabrication method should be employed. (iv) The fuel structure must contain 15 - 20% porosity in order to accomodate the fission product swelling at high burnup. This report gives a comprehensive description of fuel and pellet fabrication and characterization, irradiation, and post-irradiation examination. From the results important conclusions can be drawn about future work on nitrides

Preparation of high-pressure phase boron nitride films by physical vapor deposition

CERN Document Server

Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

2002-01-01

The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

Antisites in III-V semiconductors: Density functional theory calculations

KAUST Repository

Chroneos, A.; Tahini, Hassan Ali; Schwingenschlö gl, Udo; Grimes, R. W.

2014-01-01

as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I

III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint

Energy Technology Data Exchange (ETDEWEB)

Schnabel, Manuel; Klein, Talysa R.; Jain, Nikhil; Essig, Stephanie; Schulte-Huxel, Henning; Warren, Emily; van Hest, Maikel F. A. M.; Geisz, John; Stradins, Paul; Tamboli, Adele; Rienacker, Michael; Merkle, Agnes; Schmidt, Jan; Brendel, Rolf; Peibst, Robby

2017-07-11

Solar cells made from bulk crystalline silicon (c-Si) dominate the market, but laboratory efficiencies have stagnated because the current record efficiency of 26.3% is already very close to the theoretical limit of 29.4% for a single-junction c-Si cell. In order to substantially boost the efficiency of Si solar cells we have been developing stacked III-V/Si tandem cells, recently attaining efficiencies above 32% in four-terminal configuration. In this contribution, we use state-of-the-art III-V cells coupled with equivalent circuit simulations to compare four-terminal (4T) to three- and two-terminal (3T, 2T) operation. Equivalent circuit simulations are used to show that tandem cells can be operated just as efficiently using three terminals as with four terminals. However, care must be taken not to overestimate 3T efficiency, as the two circuits used to extract current interact, and a method is described to accurately determine this efficiency. Experimentally, a 4T GaInP/Si tandem cell utilizing an interdigitated back contact cell is shown, exhibiting a 4T efficiency of 31.5% and a 2T efficiency of 28.1%. In 3T configuration, it is used to verify the finding from simulation that 3T efficiency is overestimated when interactions between the two circuits are neglected. Considering these, a 3T efficiency approaching the 4T efficiency is found, showing that 3T operation is efficient, and an outlook on fully integrated high-efficiency 3T and 2T tandem cells is given.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices

KAUST Repository

Ibrahim, Youssef H.

2013-05-27

Group III-nitride semiconductors possess unique properties, which make them versatile materials for suiting many applications. Structuring vertical and exceptionally smooth GaN profiles is crucial for efficient optical device operation. The processing requirements for laser devices and ridge waveguides are stringent as compared to LEDs and other electronic devices. Due to the strong bonding and chemically inert nature of GaN, dry etching becomes a critical fabrication step. The surface morphology and facet etch angle are analyzed using SEM and AFM measurements. The influence of different mask materials is also studied including Ni as well as a SiO2 and resist bilayer. The high selectivity Ni Mask is found to produce high sidewall angles ~79°. Processing parameters are optimized for both the mask material and GaN in order to achieve a highly anisotropic, smooth profile, without resorting to additional surface treatment steps. An optimizing a SF6/O2 plasma etch process resulted in smooth SiO2 mask sidewalls. The etch rate and GaN surface roughness dependence on the RF power was also examined. Under a low 2mTorr pressure, the RF and ICP power were optimized to 150W and 300W respectively, such that a smooth GaN morphology and sidewalls was achieved with reduced ion damage. The The AFM measurements of the etched GaN surface indicate a low RMS roughness ranging from 4.75 nm to 7.66 nm.

Graphitic carbon nitride nanosheet electrode-based high-performance ionic actuator

Science.gov (United States)

Wu, Guan; Hu, Ying; Liu, Yang; Zhao, Jingjing; Chen, Xueli; Whoehling, Vincent; Plesse, Cédric; Nguyen, Giao T. M.; Vidal, Frédéric; Chen, Wei

2015-01-01

Ionic actuators have attracted attention due to their remarkably large strain under low-voltage stimulation. Because actuation performance is mainly dominated by the electrochemical and electromechanical processes of the electrode layer, the electrode material and structure are crucial. Here, we report a graphitic carbon nitride nanosheet electrode-based ionic actuator that displays high electrochemical activity and electromechanical conversion abilities, including large specific capacitance (259.4 F g−1) with ionic liquid as the electrolyte, fast actuation response (0.5±0.03% in 300 ms), large electromechanical strain (0.93±0.03%) and high actuation stability (100,000 cycles) under 3 V. The key to the high performance lies in the hierarchical pore structure with dominant size actuation performance. PMID:26028354

III-V quantum light source and cavity-QED on silicon.

Science.gov (United States)

Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

2013-01-01

Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

Structure of boron nitride after the high-temperature shock compression

International Nuclear Information System (INIS)

Kurdyumov, A.V.; Ostrovskaya, N.F.; Pilipenko, V.A.; Pilyankevich, A.N.; Savvakin, G.I.; Trefilov, V.I.

1979-01-01

Boron nitride structure changes as a result of high temperature dynamic compression are studied. The X-ray technique and transmission electron microscopy have been applied. The data on the structure and regularities of formation of diamond-like modifications of boron nitride at high temperature impact compression permit to consider martensite transformation as the first stage of formation of the sphalerite phase stable at high pressures. The second stage is possible if the temperature at the impact moment is sufficiently high for intensive diffusion processes

Microstructure and Hardness of High Temperature Gas Nitrided AISI 420 Martensitic Stainless Steel

Directory of Open Access Journals (Sweden)

Ibrahim Nor Nurulhuda Md.

2014-07-01

Full Text Available This study examined the microstructure and hardness of as-received and nitrided AISI 420 martensitic stainless steels. High temperature gas nitriding was employed to treat the steels at 1200°C for one hour and four hours using nitrogen gas, followed by furnace cooled. Chromium nitride and iron nitride were formed and concentrated at the outmost surface area of the steels since this region contained the highest concentration of nitrogen. The grain size enlarged at the interior region of the nitrided steels due to nitriding at temperature above the recrystallization temperature of the steel and followed by slow cooling. The nitrided steels produced higher surface hardness compared to as-received steel due to the presence of nitrogen and the precipitation of nitrides. Harder steel was produced when nitriding at four hours compared to one hour since more nitrogen permeated into the steel.

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

Science.gov (United States)

Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M

2011-05-23

We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.

Preparation of uranium-plutonium mixed nitride pellets with high purity

International Nuclear Information System (INIS)

Arai, Yasuo; Shiozawa, Ken-ichi; Ohmichi, Toshihiko

1992-01-01

Uranium-plutonium mixed nitride pellets have been prepared in the gloveboxes with high purity Ar gas atmosphere. Carbothermic reduction of the oxides in N 2 -H 2 mixed gas stream was adopted for synthesizing mixed nitride. Sintering was carried out in various conditions and the effect on the pellet characteristics was investigated. (author)

A high open-circuit voltage gallium nitride betavoltaic microbattery

International Nuclear Information System (INIS)

Cheng, Zaijun; Chen, Xuyuan; San, Haisheng; Feng, Zhihong; Liu, Bo

2012-01-01

A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p–i–n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63 Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 × 2 mm 2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63 Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery. (paper)

Ion beam induces nitridation of silicon

International Nuclear Information System (INIS)

Petravic, M.; Williams, J.S.; Conway, M.

1998-01-01

High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

Site preference of Mg acceptors and improvement of p-type doping efficiency in nitride alloys.

Science.gov (United States)

Park, Ji-Sang; Chang, K J

2013-06-19

We perform first-principles density functional calculations to investigate the effect of Al and In on the formation energy and acceptor level of Mg in group-III nitride alloys. Our calculations reveal a tendency for the Mg dopants to prefer to occupy the lattice sites surrounded with Al atoms, whereas hole carriers are generated in In- or Ga-rich sites. The separation of the Mg dopants and hole carriers is energetically more favourable than a random distribution of dopants, being attributed to the local bonding effect of weak In and strong Al potentials in alloys. As a consequence, the Mg acceptor level, which represents the activation energy of Mg, tends to decrease with increasing numbers of Al next-nearest neighbours, whereas it increases as the number of In next-nearest neighbours increases. Based on the results, we suggest that the incorporation of higher Al and lower In compositions will improve the p-type doping efficiency in quaternary alloys, in comparison with GaN or AlGaN ternary alloys with similar band gaps.

Liquid phase surface nitriding of Ti-6Al-4V pre-placed with chromium

Energy Technology Data Exchange (ETDEWEB)

Vahedi Nemani, Alireza, E-mail: alireza_vahedi@ut.ac.ir; Sohi, M. Heydarzadeh; Amadeh, A.A.; Ghaffari, Mahya

2016-08-01

In this study, liquid phase surface nitriding of Ti-6Al-4V was carried out by pre-placing of chromium powder on the substrate and subsequent Tungsten Inert Gas (TIG) surface melting. The effect of the application of low and high heat inputs on the microstructure, microhardness and wear resistance of the treated layers were studied. Surface alloying with chromium in a nitrogen containing atmosphere resulted in the formation of hard intermetallic compounds such as TiN, Cr{sub 2}N and TiCr{sub 2}. Moreover, the presence of beta stabilizer chromium together with the application of high heat input during surface treatment resulted in the presence of beta phase at room temperature. However, applying low heat input could not prevent transformation of beta to martensite. The hardness of the layers fabricated at high and low heat inputs were respectively 1050 and 1200 HV{sub 0.3} compared to average 280 HV{sub 0.3} for the as-received material. Liquid phase surface treatment of titanium at the aforementioned conditions improved the wear resistance. The lowest weight loss belonged to the specimen with the beta phase matrix. The formation of the fairly ductile bcc-β phase hindered crack nucleation during wear. The weight loss in this condition was 7 times lower than that of the base material. - Highlights: • Liquid phase surface nitriding of Ti-6Al-4V was carried out by TIG surface melting. • Cr powder was pre-placed on the surface as the beta stabilizer alloying element. • The treated layers were characterized by OM, SEM and X-ray diffraction pattern. • Hardness of the layers increased up to 3 times higher than that of the base alloy. • Liquid phase surface alloying improved the wear resistance.

Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

International Nuclear Information System (INIS)

Fleetwood, D.M.; Saks, N.S.

1996-01-01

We have combined thermally stimulated-current (TSC) and capacitance endash voltage (C endash V) measurements to estimate oxide, interface, and effective border trap densities in 6 endash 23 nm thermal, N 2 O, and N 2 O-nitrided oxides exposed to ionizing radiation or high-field electron injection. Defect densities depend strongly on oxide processing, but radiation exposure and moderate high-field stress lead to similar trapped hole peak thermal energy distributions (between ∼1.7 and ∼2.0 eV) for all processes. This suggests that similar defects dominate the oxide charge trapping properties in these devices. Radiation-induced hole and interface trap generation efficiencies (0.1%endash 1%) in the best N 2 O and N 2 O-nitrided oxides are comparable to the best radiation hardened oxides in the literature. After ∼10 Mrad(SiO 2 ) x-ray irradiation or ∼10 mC/cm 2 constant current Fowler endash Nordheim injection, effective border trap densities as high as ∼5x10 11 cm -2 are inferred from C endash V hysteresis. These measurements suggest irradiation and high-field stress cause similar border trap energy distributions. In each case, even higher densities of compensating trapped electrons in the oxides (up to 2x10 12 cm -2 ) are inferred from combined TSC and C endash V measurements. These trapped electrons prevent conventional C endash V methods from providing accurate estimates of the total oxide trap charge density in many irradiation or high-field stress studies. Fewer compensating electrons per trapped hole (∼26%±5%) are found for irradiation of N 2 O and N 2 O-nitrided oxides than for thermal oxides (∼46%±7%). (Abstract Truncated)

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

Science.gov (United States)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

A first principle study of band structure of III-nitride compounds

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Rashid [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)]. E-mail: rasofi@hotmail.com; Akbarzadeh, H. [Department of Physics, Isfahan University of Technology, 841546 Isfahan (Iran, Islamic Republic of); Fazal-e-Aleem [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)

2005-12-15

The band structure of both phases, zinc-blende and wurtzite, of aluminum nitride, indium nitride and gallium nitride has been studied using computational methods. The study has been done using first principle full-potential linearized augmented plane wave (FP-LAPW) method, within the framework of density functional theory (DFT). For the exchange correlation potential, generalized gradient approximation (GGA) and an alternative form of GGA proposed by Engel and Vosko (GGA-EV) have been used. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show a significant improvement over other theoretical work and are closer to the experimental data.

Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

Directory of Open Access Journals (Sweden)

Kan Li

2016-06-01

Full Text Available Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

High efficiency thin-film solar cells for space applications: challenges and opportunities

NARCIS (Netherlands)

Leest, R.H. van

2017-01-01

In theory high efficiency thin-film III-V solar cells obtained by the epitaxial lift-off (ELO) technique offer excellent characteristics for application in space solar panels. The thesis describes several studies that investigate the space compatibility of the thin-film solar cell design developed

Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for development of extra-high efficiency solar cells (fundamental research on extra-high efficiency III-V compound semiconductor tandem solar cells); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Chokokoritsu taiyo denchi no gijutsu kaihatsu no tame no kaiseki hyoka (chokokoritsu III-V zoku kagobutsu taiyo denchi gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Sekikawa, T; Kawanami, H; Sakata, I; Nagai, K; Matsumoto, K; Miki, K [Electrotechnical Laboratory, Tsukuba (Japan)

1994-12-01

Described herein are the results of the FY1994 research program for development of extra-high efficiency III-V compound semiconductor tandem solar cells. Heteroepitaxial structures of compound semiconductors, such as GaAs, on silicon substrates are analyzed and evaluated by EXAFS, Raman and RHEED for the initial stage of the film growth and heterointerfaces. The device capable of in-situ observation of the growing surface structures during the period of heteroepitaxial film growth is introduced, to investigate the effects of rise-up and initial growth conditions on defects. The effects of atomic hydrogen on growth of a GaAs film on a silicon substrate are investigated from photoluminescence and solar cell characteristics, to confirm the effects of reducing defects. Heteroepitaxial growth of InGaP, which has the optimum band width for forming multi-junction silicon solar cells, on a silicon substrate is investigated, to find that an interfacial buffer layer is necessary to form a good film. 2 figs.

Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

Energy Technology Data Exchange (ETDEWEB)

Patibandla, Nag; Agrawal, Vivek

2012-12-01

Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry

The extraction behaviour of As(III) and As(V) in APDC-CCl4 system

International Nuclear Information System (INIS)

Yang Ruiying; Zhu Xuping

1997-01-01

The extraction and back-extraction behaviour of As(III) and As(V) in APDC-CCl 4 system have been studied by using 76 As trace technique. As(III) can be extracted quantitatively by APDC-CCl 4 system at pH = 1-3. As(V) can be extracted after being reduced to As(III) by Na 2 S 2 O 3 . Water with high pH value can be used for back-extraction. The method can be applied in the separation of inorganic As(III) and As(V) in water quality inspection

Heating Changes Bio-Schwertmannite Microstructure and Arsenic(III Removal Efficiency

Directory of Open Access Journals (Sweden)

Xingxing Qiao

2017-01-01

Full Text Available Schwertmannite (Sch is an efficient adsorbent for arsenic(III removal from arsenic(III-contaminated groundwater. In this study, bio-schertmannite was synthesized in the presence of dissolved ferrous ions and Acidithiobacillus ferrooxidans LX5 in a culture media. Bio-synthesized Sch characteristics, such as total organic carbon (TOC, morphology, chemical functional groups, mineral phase, specific surface area, and pore volume were systematically studied after it was dried at 105 °C and then heated at 250–550 °C. Differences in arsenic(III removal efficiency between 105 °C dried-sch and 250–550 °C heated-sch also were investigated. The results showed that total organic carbon content in Sch and Sch weight gradually decreased when temperature increased from 105 °C to 350 °C. Sch partly transformed to another nanocrystalline or amorphous phase above 350 °C. The specific surface area of 250 °C heated-sch was 110.06 m2/g compared to 5.14 m2/g for the 105 °C dried-sch. Total pore volume of 105 °C dried-sch was 0.025 cm3/g with 32.0% mesopore and 68.0% macropore. However, total pore volume of 250 °C heated-mineral was 0.106 cm3/g with 23.6% micropore, 33.0% mesopore, and 43.4% macropore. The arsenic(III removal efficiency from an initial 1 mg/L arsenic(III solution (pH 7.5 was 25.1% when 0.25 g/L of 105 °C dried-sch was used as adsorbent. However, this efficiency increased to 93.0% when using 250 °C heated-sch as adsorbent. Finally, the highest efficiency for arsenic(III removal was obtained with sch-250 °C due to high amounts of sorption sites in agreement with the high specific surface area (SSA obtained for this sample.

Removal of arsenic from water using manganese (III) oxide: Adsorption of As(III) and As(V).

Science.gov (United States)

Babaeivelni, Kamel; Khodadoust, Amid P

2016-01-01

Removal of arsenic from water was evaluated with manganese (III) oxide (Mn2O3) as adsorbent. Adsorption of As(III) and As(V) onto Mn2O3 was favorable according to the Langmuir and Freundlich adsorption equilibrium equations, while chemisorption of arsenic occurred according to the Dubinin-Radushkevich equation. Adsorption parameters from the Langmuir, Freundlich, and Temkin equations showed a greater adsorption and removal of As(III) than As(V) by Mn2O3. Maximum removal of As(III) and As(V) occurred at pH 3-9 and at pH 2, respectively, while removal of As(V) in the pH range of 6-9 was 93% (pH 6) to 61% (pH 9) of the maximum removal. Zeta potential measurements for Mn2O3 in As(III) was likely converted to As(V) solutions indicated that As(III) was likely converted to As(V) on the Mn2O3 surface at pH 3-9. Overall, the effective Mn2O3 sorbent rapidly removed As(III) and As(V) from water in the pH range of 6-9 for natural waters.

Position-controlled epitaxial III-V nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

2006-06-14

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

Position-controlled epitaxial III-V nanowires on silicon

International Nuclear Information System (INIS)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

Passivation of Ge/high-κ interface using RF Plasma nitridation

Science.gov (United States)

Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

2018-01-01

In this paper, plasma nitridation of a germanium surface using NH3 and N2 gases is performed with a standard RF-PECVD method at a substrate temperature of 250 °C. The structural and optical properties of the Ge surface have been investigated using Atomic Force Microscopy (AFM), Fourier Transform Infrared Spectroscopy (FT-IR), and Variable Angle Spectroscopic Ellipsometery (VASE). Study of the Ge (100) surface revealed that it is nitrated after plasma treatment while the GeO2 regrowth on the surface has been suppressed. Also, stability of the treated surface under air exposure is observed, where all the measurements were performed at room ambient. The electrical characteristics of fabricated Al/Ti/HfO2/GeON/p-Ge capacitors using the proposed surface treatment technique have been investigated. The C-V curves indicated a negligible hysteresis compared to ˜500 mV observed in untreated samples. Additionally, the C-V characteristic is used to extract the high-κ/Ge interface trap density using the most commonly used methods in determining the interface traps. The discussion includes the Dit calculation from the high-low frequency (Castagné-Vapaille) method and Terman (high-frequency) method. The high-low frequency method indicated a low interface trap density of ˜2.5 × 1011 eV-1.cm-2 compared to the Terman method. The J-V measurements revealed more than two orders of magnitude reduction of the gate leakage. This improved Ge interface quality is a promising low-temperature technique for fabricating high-performance Ge MOSFETs.

Harvesting solar light with crystalline carbon nitrides for efficient photocatalytic hydrogen evolution

KAUST Repository

Bhunia, Manas Kumar

2014-08-14

Described herein is the photocatalytic hydrogen evolution using crystalline carbon nitrides (CNs) obtained by supramolecular aggregation followed by ionic melt polycondensation (IMP) using melamine and 2,4,6-triaminopyrimidine as a dopant. The solid state NMR spectrum of 15N-enriched CN confirms the triazine as a building unit. Controlling the amount and arrangements of dopants in the CN structure can dramatically enhance the photocatalytic performance for H2 evolution. The polytriazine imide (PTI) exhibits the apparent quantum efficiency (AQE) of 15% at 400 nm. This method successfully enables a substantial amount of visible light to be harvested for H2 evolution, and provides a promising route for the rational design of a variety of highly active crystalline CN photocatalysts. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Kunert, B.; Guo, W.; Mols, Y.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K. [imec, Kapeldreef 75, 3001 Heverlee (Belgium); Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D. [Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 15, 9052 Gent (Belgium)

2016-08-29

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

III-V nanoelectronics and related surface/interface issues

International Nuclear Information System (INIS)

Hasegawa, Hideki

2003-01-01

The conventional logic gate architecture is not suitable for high-density integration of quantum devices which are non-robust and extremely structure- and charge-sensitive. In this paper, our novel hexagonal binary-decision-diagram (BDD) quantum circuit approach for III-V nanoelectronics is reviewed and related critical surface/interface issues for high-density integration are discussed. First, the basic concept and actual implementation method of our approach are explained, giving examples of novel BDD quantum integrated circuits where nanowire networks are controlled by nanoscale Schottky wrap gates. For high-density integration, growth of embedded sub-10 nm III-V quantum wire networks by selective molecular beam epitaxy (MBE) on patterned substrates is described, including effects of atomic hydrogen irradiation and kinetic control of wire width. The key processing issue lies in understanding and control of nanostructure surfaces/interfaces. Behavior of nanoscale Schottky gates, recent scanning tunneling microscopy (STM)/scanning tunneling spectroscopy (STS) studies of surface states, and successful removal of surface states by MBE-grown silicon interface control layer are discussed

Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates

Energy Technology Data Exchange (ETDEWEB)

Shervin, Shahab; Asadirad, Mojtaba [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006 (United States); Materials Science and Engineering Program, University of Houston, Houston, Texas 77204 (United States); Kim, Seung-Hwan; Ravipati, Srikanth; Lee, Keon-Hwa [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006 (United States); Bulashevich, Kirill [STR Group, Inc., Engels av. 27, P.O. Box 89, 194156, St. Petersburg (Russian Federation); Ryou, Jae-Hyun, E-mail: jryou@uh.edu [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006 (United States); Materials Science and Engineering Program, University of Houston, Houston, Texas 77204 (United States); Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204 (United States)

2015-11-09

This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-mobility transistors (HEMTs) through theoretical calculations. We show that the electronic band structures of InAlGaN/GaN thin-film heterostructures on flexible substrates can be modified by external bending with a high degree of freedom using polarization properties of the polar semiconductor materials. Transfer characteristics of the HEMT devices, including threshold voltage and transconductance, are controlled by varied external strain. Equilibrium 2-dimensional electron gas (2DEG) is enhanced with applied tensile strain by bending the flexible structure with the concave-side down (bend-down condition). 2DEG density is reduced and eventually depleted with increasing compressive strain in bend-up conditions. The operation mode of different HEMT structures changes from depletion- to enchantment-mode or vice versa depending on the type and magnitude of external strain. The results suggest that the operation modes and transfer characteristics of HEMTs can be engineered with an optimum external bending strain applied in the device structure, which is expected to be beneficial for both radio frequency and switching applications. In addition, we show that drain currents of transistors based on flexible InAlGaN/GaN can be modulated only by external strain without applying electric field in the gate. The channel conductivity modulation that is obtained by only external strain proposes an extended functional device, gate-free SETs, which can be used in electro-mechanical applications.

Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

International Nuclear Information System (INIS)

Glas, F; Patriarche, G; Harmand, J C

2010-01-01

We review and illustrate the impact of TEM on the study of nanowires of non-nitride III-V semiconductors, with particular emphasis on the understanding of the thermodynamics and kinetics of their formation assisted by nano-sized catalyst particles. Besides providing basic information about the morphology of the nanowires and their growth rate as a function of diameter, TEM offers insights into the peculiar crystalline structure that they adopt. We discuss the formation of the unusual wurtzite hexagonal crystalline phase and that of planar stacking defects in these nanowires and show that they are kinetically controlled. We also demonstrate the transformation of wurtzite into cubic sphalerite upon epitaxial burying of the nanowires. Nanowires are particularly interesting in that they allow the fabrication of precisely positioned quantum dots with well-defined geometries. In this respect, we discuss the formation of strained quantum-size inclusions in nanowires, their critical dimensions and the kinetic and thermodynamic factors governing the changes of the crystalline structure that sometimes occur around a hetero-interface.

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

Science.gov (United States)

Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

2018-06-01

The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

Application of plasma silicon nitride to crystalline thin-film silicon solar cells. Paper

Energy Technology Data Exchange (ETDEWEB)

Schmidt, J.; Oberbeck, L.; Rinke, T.J.; Berge, C.; Bergmann, R.B.

2002-07-01

We use plasma-enhanced chemical vapour deposition to deposit silicon nitride (SiN{sub x}) films at low temperature(400 C) onto the front surface of two different types of crystalline thin-film Si solar cells. The silicon nitride acts as an excellent antireflection coating on Si and provides a very high degree of electronic surface passivation over a wide range of compositions, including near-stoichiometric and Si-rich SiN{sub x}. Application of stoichiometric SiN{sub x} to non-textured thin-film cells, epitaxially grown at low temperature by ion-assisted deposition onto a monocrystalline Si substrate, results in an open-circuit voltage of 622 mV, a short-circuit current density of 26.6 mA/cm{sup 2} and an efficiency of 12.7%. It is shown that the SiN{sub x}-passivated in-situ grown n{sup +}-emitter of this cell type allows to reach open-circuit voltages of up to 667 mV. Silicon-rich SiN{sub x} is applied to the phosphorus-diffused n{sup +}-emitter of a textured thin-film cell on a glass superstrate fabricated by layer-transfer. The emitter saturation current density of these cells is only 40-64 fA/cm{sup 2}, which allows for open-circuit voltages of up to 699 mV. An impressively high open-circuit voltage of 638 mV and a short-circuit current density of 32.0 mA/cm{sup 2} are obtained for a 25 {mu}m thick SiN{sub x}-passivated, random pyramid-textured transfer cell. A transfer cell efficiency of 15.3% is independently confirmed.

Low temperature high density plasma nitriding of stainless steel molds for stamping of oxide glasses

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2016-01-01

Full Text Available Various kinds of stainless steels have been widely utilized as a die for mold- and direct-stamping processes of optical oxide glasses. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical oxide-glass elements. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness over 1400 HV within its thickness of 50 μm without any formation of nitrides after plasma nitriding at 693 K for 14.4 ks. This plasma-nitrided mold was utilized for mold-stamping of two colored oxide glass plates at 833 K; these plates were successfully deformed and joined into a single glass plate by this stamping without adhesion or galling of oxide glasses onto the nitrided mold surface.

As(III) oxidation by active chlorine and subsequent removal of As(V) by Al13 polymer coagulation using a novel dual function reagent.

Science.gov (United States)

Hu, Chengzhi; Liu, Huijuan; Chen, Guixia; Jefferson, William A; Qu, Jiuhui

2012-06-19

An electrochemically prepared water treatment reagent containing a high concentration of Al(13) polymer and active chlorine (PACC) showed promising potential for the removal of As(III) due to the combined function of oxidation and coagulation. The results indicated that PACC was effective for As(III) removal through oxidation by the active chlorine and subsequent removal of As(V) by coagulation with the Al(13) polymer. The As(III) was oxidized to As(V) by active chlorine in PACC, with a stoichiometric rate of 0.99 mg Cl(2)/mg As(III). The Al(13) polymer was the most active Al species responsible for As(V) removal in PACC. To meet As drinking water standards the stoichiometric weight ratio of Cl(2)/Al within PACC was 0.09 for the treatment of As(III). Considering the process of As(III) oxidation and As(V) coagulation together, the optimal pH conditions for the removal of As by PACC was within the neutral range, which facilitated the reaction of As(III) with active chlorine and favored the formation of Al hydroxide flocs. The presence of humic acid reduced the As(III) removal efficiency of PACC due to its negative influence on subsequent As(V) coagulation, and disinfection byproduct yields were very low in the presence of insufficient or stoichiometric active chlorine.

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2005-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2004-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

2 W high efficiency PbS mid-infrared surface emitting laser

Science.gov (United States)

Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

2011-09-01

High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

Science.gov (United States)

Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

2015-01-13

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

Science.gov (United States)

Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

1983-01-01

A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

III-Nitrides growth and AlGaN/GaN heterostructures on ferroelectric materials

International Nuclear Information System (INIS)

Lee, Kyoung-Keun; Namkoong, Gon; Madison, Shannon M.; Ralph, Stephen E.; Doolittle, W. Alan; Losurdo, Maria; Bruno, Giovanni; Cho, Hyung Koun

2007-01-01

The growth of III-nitrides on the ferroelectric materials lithium niobate (LN) and lithium tantalate (LT) via molecular beam epitaxy (MBE) using rf plasma source has been investigated. We have found that gallium nitride (GaN) epitaxial layers have a crystalline relationship with lithium niobate (tantalate) as follows: (0 0 0 1) GaN || (0 0 0 1) LN (LT) with [10-10] GaN || [11-20] LN (LT). The surface stability of LN and LT substrates has been monitored by in situ spectroscopic ellipsometry in the vacuum chamber. Three different temperature zones have been discerned; surface degas and loss of OH group (100-350 deg. C); surface segregation/accumulation of Li and O-species (400-700 deg. C); surface evaporation of O-species and Li desorption (over 750 deg. C). However, LT shows only surface degassing in the range of 100-800 deg. C. Therefore, congruent LN substrates were chemically unstable at the growth temperature of 550-650 deg. C, and therefore developed an additional phase of Li-deficient lithium niobate (LiNb 3 O 8 ) along with lithium niobate (LiNbO 3 ), confirmed by X-ray diffraction. On the other hand, LT showed better chemical stability at these temperatures, with no additional phase development. The structural quality of GaN epitaxial layers has shown slight improvement on LT substrates over LN substrates, according to X-ray diffraction. Herein, we demonstrate AlGaN/GaN heterostructure devices on ferroelectric materials that will allow future development of multifunctional electrical and optical applications

III-Nitrides growth and AlGaN/GaN heterostructures on ferroelectric materials

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyoung-Keun [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Namkoong, Gon [Old Dominion University, Department of Electrical and Computer Engineering, Norfolk, VA 23529 (United States); Madison, Shannon M. [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Ralph, Stephen E. [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Doolittle, W. Alan [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States)]. E-mail: alan.doolittle@ece.gatech.edu; Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Department of Chemistry, University of Bari, via Orabona, 4 70126 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Department of Chemistry, University of Bari, via Orabona, 4 70126 Bari (Italy); Cho, Hyung Koun [Department of Materials Science and Engineering, Sung Kyun Kwan University, Suwon 440-746 (Korea, Republic of)

2007-06-15

The growth of III-nitrides on the ferroelectric materials lithium niobate (LN) and lithium tantalate (LT) via molecular beam epitaxy (MBE) using rf plasma source has been investigated. We have found that gallium nitride (GaN) epitaxial layers have a crystalline relationship with lithium niobate (tantalate) as follows: (0 0 0 1) GaN || (0 0 0 1) LN (LT) with [10-10] GaN || [11-20] LN (LT). The surface stability of LN and LT substrates has been monitored by in situ spectroscopic ellipsometry in the vacuum chamber. Three different temperature zones have been discerned; surface degas and loss of OH group (100-350 deg. C); surface segregation/accumulation of Li and O-species (400-700 deg. C); surface evaporation of O-species and Li desorption (over 750 deg. C). However, LT shows only surface degassing in the range of 100-800 deg. C. Therefore, congruent LN substrates were chemically unstable at the growth temperature of 550-650 deg. C, and therefore developed an additional phase of Li-deficient lithium niobate (LiNb{sub 3}O{sub 8}) along with lithium niobate (LiNbO{sub 3}), confirmed by X-ray diffraction. On the other hand, LT showed better chemical stability at these temperatures, with no additional phase development. The structural quality of GaN epitaxial layers has shown slight improvement on LT substrates over LN substrates, according to X-ray diffraction. Herein, we demonstrate AlGaN/GaN heterostructure devices on ferroelectric materials that will allow future development of multifunctional electrical and optical applications.

Position-controlled epitaxial III-V nanowires on silicon

NARCIS (Netherlands)

Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

International Nuclear Information System (INIS)

Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

2010-01-01

A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Identification of the gallium vacancy-oxygen pair defect in GaN

International Nuclear Information System (INIS)

Son, N. T.; Hemmingsson, C. G.; Janzen, E.; Paskova, T.; Evans, K. R.; Usui, A.; Morishita, N.; Ohshima, T.; Isoya, J.; Monemar, B.

2009-01-01

Cation vacancies like V Ga , V Al and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the V Ga O N pair in GaN which is the model material for the III-nitrides and their alloys.

The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

Energy Technology Data Exchange (ETDEWEB)

Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

2014-11-15

Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

Fast optical in situ spectroscopy in III-V MOVPE

Energy Technology Data Exchange (ETDEWEB)

Kaspari, C.

2007-09-29

This work describes the application of optical in situ measurement techniques (reflectance anisotropy spectroscopy, RAS, and spectroscopic ellipsometry, SE) to processes that are important for the growth of III-V semiconductors like GaAs, InP, InAs and GaP in metal-organic vapour phase epitaxy (MOVPE). Special emphasis is placed on the determination of the free carrier concentration (doping level) and the study of the thermal desorption properties of III-V oxides. A large part of this work is concerned with the development and the construction of a multichannel RAS setup that allows the recording of RAS spectra within fractions of a second. On the basis of benchmark measurements it was shown that the spectral resolution is sufficiently accurate for application in epitaxy. To demonstrate the recording of spectra with high temporal resolution, RAS monolayer oscillations during growth of GaAs were studied and it was shown that the surface changes periodically between a relatively smooth morphology with adsorbed methyl groups (type III) and a stepped, gallium-rich surface (type II). Furthermore the non-reversible process of growing InAs quantum dots on GaAs was studied. It was shown that the multichannel RAS is capable of detecting the 2D-3D transition as well as the following morphological change of the surface at high temporal resolution. For the measurement of the doping level, the relationship between the doping-induced internal electric field and the anisotropy of the sample was studied. To understand the effect of the so-called doping oscillations, a theoretical model was developed. For the investigation of the thermal desorption of the III-V oxides in MOVPE, a number of test series were realised. It was also found that the formation of the reconstructed surface is finished a considerable time after the SE transient indicates stable conditions (no further reduction of the oxide layer). The activation energy for oxide desorption from InAs, GaAs and InP was

Hybrid III-V-on-Si Vertical Cavity laser for Optical Interconnects

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Semenova, Elizaveta; Chung, Il-Sug

2013-01-01

Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers.......Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers....

Synthesis of Ce(III)-doped Fe3O4 magnetic particles for efficient removal of antimony from aqueous solution

International Nuclear Information System (INIS)

Qi, Zenglu; Joshi, Tista Prasai; Liu, Ruiping; Liu, Huijuan; Qu, Jiuhui

2017-01-01

Highlights: • Doping of Ce into Fe 3 O 4 was achieved based on a facile solvothermal method. • After doping, the removal capacity was increased by 5 times for “Sb(V)” and 2 times for “Sb(III)”. • Decreasing pH improved adsorption of Sb(V) but decreased adsorption of Sb(III). • Antimony sorption mechanisms on Ce-doped Fe 3 O 4 were illustrated. - Abstract: Aqueous antimony (Sb) pollution from human activity is of great concern in drinking water due to its adverse health effect. Magnetic Fe 3 O 4 particles, with high separation ability from solution, have been considered as a low-cost Sb adsorbent for contaminants. However, the limited adsorption capacity has restricted its practical application. In this study, a solvothermal approach was developed for doping Ce(III) into Fe 3 O 4 , thereby increasing the adsorption efficacy for both Sb(III) and Sb(V). In contrast to un-doped Fe 3 O 4 , the adsorption capacity towards Sb(III) and Sb(V) in Ce-doped materials increased from 111.4 to 224.2 mg/g and from 37.2 to 188.1 mg/g at neutral pH, respectively. Based on the combined results of XPS, XRD, and FTIR, it confirmed that Ce atom successfully doped into the Fe 3 O 4 structure, resulting in the decreased particle size, increased the surface area, and isoelectric point. Furthermore, the vibrating sample magnetometer (VSM) results showed that the Ce doping process had some side effects on the primitive magnetic property, but remaining the high separation potential during water treatment. According to the high removal efficiency and magnetic property, the Ce-doped Fe 3 O 4 of great simplicity should be a promising adsorbent for aqueous Sb removal.

Nitride stabilized core/shell nanoparticles

Science.gov (United States)

Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

2018-01-30

Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

High surface area V-Mo-N materials synthesized from amine intercalated foams

International Nuclear Information System (INIS)

Krawiec, Piotr; Narayan Panda, Rabi; Kockrick, Emanuel; Geiger, Dorin; Kaskel, Stefan

2008-01-01

Nanocrystalline ternary V-Mo nitrides were prepared via nitridation of amine intercalated oxide foams or bulk ternary oxides. Specific surface areas were in the range between 40 and 198 m 2 g -1 and strongly depended on the preparation method (foam or bulk oxide). Foamed precursors were favorable for vanadium rich materials, while for molybdenum rich samples bulk ternary oxides resulted in higher specific surface areas. The materials were characterized via nitrogen physisorption at 77 K, X-ray diffraction patterns, electron microscopy, and elemental analysis. - Graphical abstract: Nanocrystalline ternary V-Mo nitrides were prepared via nitridation of amine intercalated oxide foams or bulk ternary oxides. Foamed precursors were favorable for vanadium rich materials, while for molybdenum rich samples bulk ternary oxides resulted in higher specific surface areas

Thermal crosstalk in arrays of III-N-based Lasers

International Nuclear Information System (INIS)

Kuc, Maciej; Sarzała, Robert P.; Nakwaski, Włodzimierz

2013-01-01

This paper presents a 3D comprehensive thermal-electrical self-consistent model of the continuous-wave (CW) operation of one-dimensional arrays of III-N-based laser diodes at room-temperature (RT). Their performance is mostly limited by thermal processes, in particular by thermal crosstalk between array emitters. Based on data collected from a range of secondary sources, the temperature dependence of the thermal and electrical conductivities of III-N materials used to manufacture nitride-based devices is shown to be a function of the thickness, aluminum mole fractions and Si- and Mg-doping levels of the nitride layers. The impact of substrate width and thickness on increasing the efficiency of heat-flux transport and reducing thermal crosstalk is investigated. As expected, the application of a top-mounted diamond heat spreader was found to have considerable influence on the thermal crosstalk between array emitters, enabling the RT CW operation of laser diode arrays with additional emitters

Overview of Ecological Agriculture with High Efficiency

OpenAIRE

Huang, Guo-qin; Zhao, Qi-guo; Gong, Shao-lin; Shi, Qing-hua

2012-01-01

From the presentation, connotation, characteristics, principles, pattern, and technologies of ecological agriculture with high efficiency, we conduct comprehensive and systematic analysis and discussion of the theoretical and practical progress of ecological agriculture with high efficiency. (i) Ecological agriculture with high efficiency was first advanced in China in 1991. (ii) Ecological agriculture with high efficiency highlights "high efficiency", "ecology", and "combination". (iii) Ecol...

Frequency effects and properties of plasma deposited fluorinated silicon nitride

International Nuclear Information System (INIS)

Chang, C.; Flamm, D.L.; Ibbotson, D.E.; Mucha, J.A.

1988-01-01

The properties of low-hydrogen, fluorinated plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films grown using NF 3 /SiH 4 /N 2 feed mixtures in 200 kHz and 14 MHz discharges were compared. High-energy ion bombardment at 200 kHz is expected to enhance surface diffusion and chemical reconstruction. Compared to fluorinated silicon nitride deposited at 14 MHz under otherwise comparable conditions, the 200 kHz films had a lower Si--H bond concentration (approx. 21 cm -3 ), lower total hydrogen content (5--8 x 10 21 cm -3 ), better resistance to oxidation, lower compressive stress (-0.7 to -1.5 Gdyne/cm), and higher density (3.1 g/cm 3 ). The dielectric constant of better low-frequency Class I films was constant to 500 MHz, while that of high-frequency films fell up to 15% between 100 Hz and 10 MHz. The absorption edges of low-frequency PECVD fluorinated silicon nitride films were between 5.0 and 6.1 eV, which compare with 4.4 to 5.6 eV for the high-excitation frequency fluorinated material and 3 to 4 eV for conventional PECVD nitride. However high-frequency films may have fewer trap centers and a lower dielectric constant. 14 MHz p-SiN:F films grown with NH 3 as an auxiliary nitrogen source showed absorption edges similar to low-frequency material grown from NF 3 /SiH 4 /N 2 , but they have substantially more N--H bonding. The dielectric constant and absorption edge of these films were comparable to those of low-frequency p-SiN:F from NF 3 /SiH 4 /N 2

Enhancing the Light-Extraction Efficiency of AlGaN Nanowires Ultraviolet Light-Emitting Diode by using Nitride/Air Distributed Bragg Reflector Nanogratings

KAUST Repository

Alias, Mohd Sharizal; Janjua, Bilal; Zhao, Chao; Priante, Davide; Alhamoud, Abdullah A.; Tangi, Malleswararao; Alanazi, Lafi M.; Alatawi, Abdullah A.; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

2017-01-01

The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstrate an AlGaN nanowires light-emitting diode (NWs-LED) integrated with nitride/air Distributed Bragg Reflector (DBR) nanogratings. Compared to a control device (only mesa), the AlGaN NWs-LED with the nitride/air DBR nanogratings exhibit enhancement in the light output power and external quantum efficiency (EQE) by a factor of ∼1.67. The higher light output power and EQE are attributed mainly to the multiple reflectances laterally for the transverse magnetic (TM)-polarized light and scattering introduced by the nanogratings. To further understand the LEE enhancement, the electrical field distribution, extraction ratio and polar pattern of the AlGaN NWs-LED with and without the nitride/air DBR nanogratings were analyzed using the finite-difference-time-domain method. It was observed that the TM-field emission was confined and scattered upward whereas the polar pattern was intensified for the AlGaN NWs-LED with the nanogratings. Our approach to enhance the LEE via the nitride/air DBR nanogratings can provide a promising route for increasing the efficiency of AlGaN-based LEDs, also, to functioning as facet mirror for AlGaN-based laser diodes.

Enhancing the Light-Extraction Efficiency of AlGaN Nanowires Ultraviolet Light-Emitting Diode by using Nitride/Air Distributed Bragg Reflector Nanogratings

KAUST Repository

Alias, Mohd Sharizal

2017-09-11

The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstrate an AlGaN nanowires light-emitting diode (NWs-LED) integrated with nitride/air Distributed Bragg Reflector (DBR) nanogratings. Compared to a control device (only mesa), the AlGaN NWs-LED with the nitride/air DBR nanogratings exhibit enhancement in the light output power and external quantum efficiency (EQE) by a factor of ∼1.67. The higher light output power and EQE are attributed mainly to the multiple reflectances laterally for the transverse magnetic (TM)-polarized light and scattering introduced by the nanogratings. To further understand the LEE enhancement, the electrical field distribution, extraction ratio and polar pattern of the AlGaN NWs-LED with and without the nitride/air DBR nanogratings were analyzed using the finite-difference-time-domain method. It was observed that the TM-field emission was confined and scattered upward whereas the polar pattern was intensified for the AlGaN NWs-LED with the nanogratings. Our approach to enhance the LEE via the nitride/air DBR nanogratings can provide a promising route for increasing the efficiency of AlGaN-based LEDs, also, to functioning as facet mirror for AlGaN-based laser diodes.

Hybrid III-V/SOI Resonant Cavity Photodetector

DEFF Research Database (Denmark)

Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

2016-01-01

A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization.......A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

Investigation of the separation of americium(III) and europium(III) by high-speed countercurrent chromatography

International Nuclear Information System (INIS)

Wu, J.F.; Jin, Y.R.; Xu, Q.C.; Wang, S.L.; Zhang, L.X.

2005-01-01

The long-lived actinides are the important elements in the radioactive waste ;disposal. Because the ions semi diameter and chemical properties of trivalent actinides(III) and trivalent lanthanides(III) are very similar, the separation between them is very difficult. Yang Yu-Sheng put forward the actinides(III) are softer acid than the lanthanides(III), so the actinides(III) are more easily extracted by the soft extractant contain sulfur or nitrogen than the lanthanides(III). Some research have been done on the separation between actinides(III) and lanthanides(III) using the extractants contain sulfur or nitrogen. The results show that satisfactory separation efficiency was gained. Countercurrent Chromatography (CCC) have many specific advantages, such as free from solid support, permit large sample volume and high flow rate, which is useful in the preconcentration of inorganic solute and inorganic preparation. Some studies were done on the separation of lanthanides or-other inorganic elements by HSCCC, the high-purity reagents prepared by HSCCC or CPC turned out to be successful. In present paper, the investigation of separation between Americium (III) and Euricium (III) by High-Speed Countercurrent Chromatography (HSCCC) were made. The extractant used in the work was prepared by ourselves, which is of the soft extractant contrain sulfur. The effects of separation condition on the separation efficiency of Am and Eu by HSCCC were investigated using dichlorophenyl dithiophosphinic acid in xylene as the stationary phase and 0.1 mol/L NaClO4 as mobile phase, respectively. The results show that mutual separation between Am and Eu can be accomplished. The separation factor increases with the increasing of the concentration of extractant and the pH value of the mobile phase, further more, minishing the flow rate of the mobile phase can also improves the separation efficiency between Am and Eu. The nearly base separation was gained when the flow rate is 0.35 ml/min, the

An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

Science.gov (United States)

Rohde, S.; Barnett, S. A.; Choi, C.-H.

1989-06-01

A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

Direct growth of vanadium nitride nanosheets on carbon nanotube fibers as novel negative electrodes for high-energy-density wearable fiber-shaped asymmetric supercapacitors

Science.gov (United States)

Guo, Jiabin; Zhang, Qichong; Sun, Juan; Li, Chaowei; Zhao, Jingxin; Zhou, Zhenyu; He, Bing; Wang, Xiaona; Man, Ping; Li, Qiulong; Zhang, Jun; Xie, Liyan; Li, Mingxing; Yao, Yagang

2018-04-01

Significant efforts have been recently devoted to constructing high-performance fiber-shaped asymmetric supercapacitors. However, it is still a paramount challenge to develop high-energy-density fiber-shaped asymmetric supercapacitors for practical applications in portable and wearable electronics. This work reports a simple and efficient method to directly grow vanadium nitride nanosheets on carbon nanotube fibers as advanced negative electrodes with a high specific capacitance of 188 F/cm3 (564 mF/cm2). Taking advantage of their attractive structure, we successfully fabricated a fiber-shaped asymmetric supercapacitor device with a maximum operating voltage of 1.6 V by assembling the vanadium nitride/carbon nanotube fiber negative electrode with the Zinc-Nickel-Cobalt ternary oxides nanowire arrays positive electrode. Due to the excellent synergistic effects between positive and negative electrodes, a remarkable specific capacitance of 50 F/cm3 (150 mF/cm2) and an outstanding energy density of 17.78 mWh/cm3 (53.33 μWh/cm2) for our fiber-shaped asymmetric supercapacitor can be achieved. Furthermore, the as-assembled fiber-shaped asymmetric supercapacitor device has excellent mechanical flexibility in that 91% of the capacitance retained after bending 90° for 3000 times. Thus, this work exploits a pathway to construct high-energy-density fiber-shaped asymmetric supercapacitor for next-generation portable and wearable electronics.

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

KAUST Repository

Yan, Long

2018-05-03

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

KAUST Repository

Yan, Long; Zhang, Yuantao; Han, Xu; Deng, Gaoqiang; Li, Pengchong; Yu, Ye; Chen, Liang; Li, Xiaohang; Song, Junfeng

2018-01-01

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

XPS analysis for cubic boron nitride crystal synthesized under high pressure and high temperature using Li3N as catalysis

International Nuclear Information System (INIS)

Guo, Xiaofei; Xu, Bin; Zhang, Wen; Cai, Zhichao; Wen, Zhenxing

2014-01-01

Highlights: • The cBN was synthesized by Li 3 N as catalyst under high pressure and high temperature (HPHT). • The film coated on the as-grown cBN crystals was studied by XPS. • The electronic structure variation in the film was investigated. • The growth mechanism of cubic boron nitride crystal was analyzed briefly. - Abstract: Cubic boron nitride (cBN) single crystals are synthesized with lithium nitride (Li3N) as catalyst under high pressure and high temperature. The variation of electronic structures from boron nitride of different layers in coating film on the cBN single crystal has been investigated by X-ray photoelectron spectroscopy. Combining the atomic concentration analysis, it was shown that from the film/cBN crystal interface to the inner, the sp 2 fractions are decreasing, and the sp 3 fractions are increasing in the film at the same time. Moreover, by transmission electron microscopy, a lot of cBN microparticles are found in the interface. For there is no Li 3 N in the film, it is possible that Li 3 N first reacts with hexagonal boron nitride to produce Li 3 BN 2 during cBN crystals synthesis under high pressure and high temperature (HPHT). Boron and nitrogen atoms, required for cBN crystals growth, could come from the direct conversion from hexagonal boron nitride with the catalysis of Li 3 BN 2 under high pressure and high temperature, but not directly from the decomposition of Li 3 BN 2

Technics Research on Polycrystalline Cubic Boron Nitride Cutting Tools Dry Turning Ti-6AL-4V Alloy Based on Orthogonal Experimental Design

Directory of Open Access Journals (Sweden)

Jia Yunhai

2018-01-01

Full Text Available Ti-6Al-4V components are the most widely used titanium alloy products not only in the aerospace industry, but also for bio-medical applications. The machine-ability of titanium alloys is impaired by their high temperature chemical reactivity, low thermal conductivity and low modulus of elasticity. Polycrystalline cubic boron nitride represents a substitute tool material for turning titanium alloys due to its high hardness, wear resistance, thermal stability and hot red hardness. For determination of suitable cutting parameters in dry turning Ti-6AL-4V alloy by Polycrystalline cubic boron nitride cutting tools, the samples, 300mm in length and 100mm in diameter, were dry machined in a lathe. The turning suitable parameters, such as cutting speed, feed rate and cut depth were determined according to workpieces surface roughness and tools flank wear based on orthogonal experimental design. The experiment showed that the cutting speed in the range of 160~180 m/min, the feed rate is 0.15 mm/rev and the depth of cut is 0.20mm, ideal workpiece surface roughness and little cutting tools flank wear can be obtained.

High aspect ratio titanium nitride trench structures as plasmonic biosensor

DEFF Research Database (Denmark)

Shkondin, Evgeniy; Repän, Taavi; Takayama, Osamu

2017-01-01

High aspect ratio titanium nitride (TiN) grating structures are fabricated by the combination of deep reactive ion etching (DRIE) and atomic layer deposition (ALD) techniques. TiN is deposited at 500 ◦C on a silicon trench template. Silicon between vertical TiN layers is selectively etched...... to fabricate the high aspect ratio TiN trenches with the pitch of 400 nm and height of around 2.7 µm. Dielectric functions of TiN films with different thicknesses of 18 - 105 nm and post-annealing temperatures of 700 - 900 ◦C are characterized by an ellipsometer. We found that the highest annealing temperature...... of 900 ◦C gives the most pronounced plasmonic behavior with the highest plasma frequency, ωp = 2.53 eV (λp = 490 nm). Such high aspect ratio trench structures function as a plasmonic grating sensor that supports the Rayleigh-Woods anomalies (RWAs), enabling the measurement of changes in the refractive...

Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

Science.gov (United States)

Hinuma, Yoyo; Hatakeyama, Taisuke; Kumagai, Yu; Burton, Lee A.; Sato, Hikaru; Muraba, Yoshinori; Iimura, Soshi; Hiramatsu, Hidenori; Tanaka, Isao; Hosono, Hideo; Oba, Fumiyasu

2016-01-01

Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calculations of electronic structure, stability and dopability. This approach identifies as-yet-unreported CaZn2N2 that has earth-abundant components, smaller carrier effective masses than gallium nitride and a tunable direct bandgap suited for light emission and harvesting. High-pressure synthesis realizes this phase, verifying the predicted crystal structure and band-edge red photoluminescence. In total, we propose 21 promising systems, including Ca2ZnN2, Ba2ZnN2 and Zn2PN3, which have not been reported as semiconductors previously. Given the variety in bandgaps of the identified compounds, the present study expands the potential suitability of nitride semiconductors for a broader range of electronic, optoelectronic and photovoltaic applications. PMID:27325228

Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

International Nuclear Information System (INIS)

Anselin, F.

1966-06-01

A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

Work Function Characterization of Potassium-Intercalated, Boron Nitride Doped Graphitic Petals

Directory of Open Access Journals (Sweden)

Patrick T. McCarthy

2017-07-01

Full Text Available This paper reports on characterization techniques for electron emission from potassium-intercalated boron nitride-modified graphitic petals (GPs. Carbon-based materials offer potentially good performance in electron emission applications owing to high thermal stability and a wide range of nanostructures that increase emission current via field enhancement. Furthermore, potassium adsorption and intercalation of carbon-based nanoscale emitters decreases work functions from approximately 4.6 eV to as low as 2.0 eV. In this study, boron nitride modifications of GPs were performed. Hexagonal boron nitride is a planar structure akin to graphene and has demonstrated useful chemical and electrical properties when embedded in graphitic layers. Photoemission induced by simulated solar excitation was employed to characterize the emitter electron energy distributions, and changes in the electron emission characteristics with respect to temperature identified annealing temperature limits. After several heating cycles, a single stable emission peak with work function of 2.8 eV was present for the intercalated GP sample up to 1,000 K. Up to 600 K, the potassium-intercalated boron nitride modified sample exhibited improved retention of potassium in the form of multiple emission peaks (1.8, 2.5, and 3.3 eV resulting in a large net electron emission relative to the unmodified graphitic sample. However, upon further heating to 1,000 K, the unmodified GP sample demonstrated better stability and higher emission current than the boron nitride modified sample. Both samples deintercalated above 1,000 K.

Zwitterion-functionalized polymer microspheres as a sorbent for solid phase extraction of trace levels of V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) prior to their determination by ICP-MS.

Science.gov (United States)

Jia, Xiaoyu; Gong, Dirong; Zhao, Junyi; Ren, Hongyun; Wang, Jiani; Zhang, Xian

2018-03-19

This paper describes the preparation of zwitterion-functionalized polymer microspheres (ZPMs) and their application to simultaneous enrichment of V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) from environmental water samples. The ZPMs were prepared by emulsion copolymerization of ethyl methacrylate, 2-diethylaminoethyl methacrylate and triethylene glycol dimethyl acrylate followed by modification with 1,3-propanesultone. The components were analyzed by elemental analyses as well as Fourier transform infrared spectroscopy, and the structures were characterized by scanning electron microscopy and transmission electron microscopy. The ZPMs were packed into a mini-column for on-line solid-phase extraction (SPE) of the above metal ions. Following extraction with 40 mM NH 4 NO 3 and 0.5 M HNO 3 solution, the ions were quantified by ICP-MS. Under the optimized conditions, the enrichment factors (from a 40 mL sample) are up to 60 for the ions V(V), As(III), Sb(III) and Hg(II), and 55 for Cr(III) and Sn(IV). The detection limits are 1.2, 3.4, 1.0, 3.7, 2.1 and 1.6 ng L -1 for V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II), respectively, and the relative standard deviations (RSDs) are below 5.2%. The feasibility and accuracy of the method were validated by successfully analyzing six certified reference materials as well as lake, well and river waters. Graphical abstract Zwitterion-functionalized polymer microspheres (ZPMs) were prepared and packed into a mini-column for on-line solid-phase extraction (SPE) via pump 1. Then V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) ions in environmental waters were eluted and submitted to ICP-MS via pump 2.

Alloy Effects on the Gas Nitriding Process

Science.gov (United States)

Yang, M.; Sisson, R. D.

2014-12-01

Alloy elements, such as Al, Cr, V, and Mo, have been used to improve the nitriding performance of steels. In the present work, plain carbon steel AISI 1045 and alloy steel AISI 4140 were selected to compare the nitriding effects of the alloying elements in AISI 4140. Fundamental analysis is carried out by using the "Lehrer-like" diagrams (alloy specific Lehrer diagram and nitriding potential versus nitrogen concentration diagram) and the compound layer growth model to simulate the gas nitriding process. With this method, the fundamental understanding for the alloy effect based on the thermodynamics and kinetics becomes possible. This new method paves the way for the development of new alloy for nitriding.

Amorphous Metal Tungsten Nitride and its Application for Micro and Nanoelectromechanical Applications

KAUST Repository

Mayet, Abdulilah M.

2016-05-01

The objective of this doctoral thesis is to develop, engineer and investigate an amorphous metal tungsten nitride (aWNx) and to study its functionality for applications focused on electromechanical system at the nano-scale. Charge transport based solid state device oriented complementary metal oxide semiconductor (CMOS) electronics have reached a level where they are scaled down to nearly their fundamental limits regarding switching speed, off state power consumption and the on state power consumption due to the fundamental limitation of sub-threshold slope (SS) remains at 60 mV/dec. NEM switch theoretically and practically offers the steepest sub-threshold slope and practically has shown zero static power consumption due to their physical isolation originated from the nature of their mechanical operation. Fundamental challenges remain with NEM switches in context of their performance and reliability: (i) necessity of lower pull-in voltage comparable to CMOS technology; (ii) operation in ambient/air; (iii) increased ON current and decreased ON resistance; (iv) scaling of devices and improved mechanical and electrical contacts; and (v) high endurance. The “perfect” NEM switch should overcome all the above-mentioned challenges. Here, we show such a NEM switch fabricated with aWNx to show (i) sub-0.3-volt operation; (ii) operation in air and vacuum; (iii) ON current as high as 0.5 mA and ON resistance lower than 5 kΩ; (iv) improved mechanical contact; and the most importantly (v) continuous switching of 8 trillion cycles for more than 10 days with the highest switching speed is 30 nanosecond without hysteresis. In addition, tungsten nitride could be the modern life vine by fulfilling the demand of biodegradable material for sustainable life regime. Transient electronics is a form of biodegradable electronics as it is physically disappearing totally or partially after performing the required function. The fabricated aWNx suites this category very well, despite not

Nitride alloy layer formation of duplex stainless steel using nitriding process

Science.gov (United States)

Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

2018-01-01

Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

Ultra-high Efficiency DC-DC Converter using GaN Devices

DEFF Research Database (Denmark)

Ramachandran, Rakesh

2016-01-01

properties of GaN devices can be utilized in power converters to make them more compact and highly efficient. This thesis entitled “Ultra-high Efficiency DC-DC Converter using GaN devices” focuses on achieving ultra-high conversion efficiency in an isolated dc-dc converter by the optimal utilization of Ga...... for many decades. However, the rate of improvement slowed as the silicon power materials asymptotically approached its theoretical bounds. Compared to Si, wideband gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are promising semiconductors for power devices due to their superior...... in this thesis. Efficiency measurements from the hardware prototype of both the topologies are also presented in this thesis. Finally, the bidirectional operation of an optimized isolated dc-dc converter is presented. The optimized converter has achieved an ultra-high efficiency of 98.8% in both directions...

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

KAUST Repository

Hazari, Arnab

2015-11-12

III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

Arsenic removal with iron(II) and iron(III) in waters with high silicate and phosphate concentrations.

Science.gov (United States)

Roberts, Linda C; Hug, Stephan J; Ruettimann, Thomas; Billah, Morsaline; Khan, Abdul Wahab; Rahman, Mohammad Tariqur

2004-01-01

Arsenic removal by passive treatment, in which naturally present Fe(II) is oxidized by aeration and the forming iron(III) (hydr)oxides precipitate with adsorbed arsenic, is the simplest conceivable water treatment option. However, competing anions and low iron concentrations often require additional iron. Application of Fe(II) instead of the usually applied Fe(III) is shown to be advantageous, as oxidation of Fe(II) by dissolved oxygen causes partial oxidation of As(III) and iron(III) (hydr)oxides formed from Fe(II) have higher sorption capacities. In simulated groundwater (8.2 mM HCO3(-), 2.5 mM Ca2+, 1.6 mM Mg2+, 30 mg/L Si, 3 mg/L P, 500 ppb As(III), or As(V), pH 7.0 +/- 0.1), addition of Fe(II) clearly leads to better As removal than Fe(III). Multiple additions of Fe(II) further improved the removal of As(II). A competitive coprecipitation model that considers As(III) oxidation explains the observed results and allows the estimation of arsenic removal under different conditions. Lowering 500 microg/L As(III) to below 50 microg/L As(tot) in filtered water required > 80 mg/L Fe(III), 50-55 mg/L Fe(II) in one single addition, and 20-25 mg/L in multiple additions. With As(V), 10-12 mg/L Fe(II) and 15-18 mg/L Fe(III) was required. In the absence of Si and P, removal efficiencies for Fe(II) and Fe(III) were similar: 30-40 mg/L was required for As(II), and 2.0-2.5 mg/L was required for As(V). In a field study with 22 tubewells in Bangladesh, passive treatment efficiently removed phosphate, but iron contents were generally too low for efficient arsenic removal.

Titanium Matrix Composite Ti/TiN Produced by Diode Laser Gas Nitriding

Directory of Open Access Journals (Sweden)

Aleksander Lisiecki

2015-01-01

Full Text Available A high power direct diode laser, emitting in the range of near infrared radiation at wavelength 808–940 nm, was applied to produce a titanium matrix composite on a surface layer of titanium alloy Ti6Al4V by laser surface gas nitriding. The nitrided surface layers were produced as single stringer beads at different heat inputs, different scanning speeds, and different powers of laser beam. The influence of laser nitriding parameters on the quality, shape, and morphology of the surface layers was investigated. It was found that the nitrided surface layers consist of titanium nitride precipitations mainly in the form of dendrites embedded in the titanium alloy matrix. The titanium nitrides are produced as a result of the reaction between molten Ti and gaseous nitrogen. Solidification and subsequent growth of the TiN dendrites takes place to a large extent at the interface of the molten Ti and the nitrogen gas atmosphere. The direction of TiN dendrites growth is perpendicular to the surface of molten Ti. The roughness of the surface layers depends strongly on the heat input of laser nitriding and can be precisely controlled. In spite of high microhardness up to 2400 HV0.2, the surface layers are crack free.

Low-Temperature Nitriding of Deformed Austenitic Stainless Steels with Various Nitrogen Contents Obtained by Prior High-Temperature Solution Nitriding

DEFF Research Database (Denmark)

Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

2016-01-01

In the past decades, high nitrogen steels (HNS) have been regarded as substitutes for conventional austenitic stainless steels because of their superior mechanical and corrosion properties. However, the main limitation to their wider application is their expensive production process....... As an alternative, high-temperature solution nitriding has been applied to produce HNS from three commercially available stainless steel grades (AISI 304L, AISI 316, and EN 1.4369). The nitrogen content in each steel alloy is varied and its influence on the mechanical properties and the stability of the austenite...... investigated. Both hardness and yield stress increase and the alloys remain ductile. In addition, strain-induced transformation of austenite to martensite is suppressed, which is beneficial for subsequent low-temperature nitriding of the surface of deformed alloys. The combination of high- and low...

III-nitride based light emitting diodes and applications

CERN Document Server

Han, Jung; Amano, Hiroshi; Morkoç, Hadis

2013-01-01

Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on th...

Synthesis of Ce(III)-doped Fe{sub 3}O{sub 4} magnetic particles for efficient removal of antimony from aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Qi, Zenglu; Joshi, Tista Prasai [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Liu, Ruiping, E-mail: liuruiping@rcees.ac.cn [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Liu, Huijuan [University of Chinese Academy of Sciences, Beijing 100049 (China); State Key Laboratory of Environmental Aquatic Chemistry, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085 (China); Qu, Jiuhui [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China)

2017-05-05

Highlights: • Doping of Ce into Fe{sub 3}O{sub 4} was achieved based on a facile solvothermal method. • After doping, the removal capacity was increased by 5 times for “Sb(V)” and 2 times for “Sb(III)”. • Decreasing pH improved adsorption of Sb(V) but decreased adsorption of Sb(III). • Antimony sorption mechanisms on Ce-doped Fe{sub 3}O{sub 4} were illustrated. - Abstract: Aqueous antimony (Sb) pollution from human activity is of great concern in drinking water due to its adverse health effect. Magnetic Fe{sub 3}O{sub 4} particles, with high separation ability from solution, have been considered as a low-cost Sb adsorbent for contaminants. However, the limited adsorption capacity has restricted its practical application. In this study, a solvothermal approach was developed for doping Ce(III) into Fe{sub 3}O{sub 4}, thereby increasing the adsorption efficacy for both Sb(III) and Sb(V). In contrast to un-doped Fe{sub 3}O{sub 4}, the adsorption capacity towards Sb(III) and Sb(V) in Ce-doped materials increased from 111.4 to 224.2 mg/g and from 37.2 to 188.1 mg/g at neutral pH, respectively. Based on the combined results of XPS, XRD, and FTIR, it confirmed that Ce atom successfully doped into the Fe{sub 3}O{sub 4} structure, resulting in the decreased particle size, increased the surface area, and isoelectric point. Furthermore, the vibrating sample magnetometer (VSM) results showed that the Ce doping process had some side effects on the primitive magnetic property, but remaining the high separation potential during water treatment. According to the high removal efficiency and magnetic property, the Ce-doped Fe{sub 3}O{sub 4} of great simplicity should be a promising adsorbent for aqueous Sb removal.

Towards highly efficient water photoelectrolysis

Science.gov (United States)

Elavambedu Prakasam, Haripriya

ethylene glycol resulted in remarkable growth characteristics of titania nanotube arrays, hexagonal closed packed up to 1 mm in length, with tube aspect ratios of approximately 10,000. For the first time, complete anodization of the starting titanium foil has been demonstrated resulting in back to back nanotube array membranes ranging from 360 mum--1 mm in length. The nanotubes exhibited growth rates of up to 15 mum/hr. A detailed study on the factors affecting the growth rate and nanotube dimensions is presented. It is suggested that faster high field ionic conduction through a thinner barrier layer is responsible for the higher growth rates observed in electrolytes containing ethylene glycol. Methods to fabricate free standing, titania nanotube array membranes ranging in thickness from 50 microm--1000 mum has also been an outcome of this dissertation. In an effort to combine the charge transport properties of titania with the light absorption properties of iron (III) oxide, films comprised of vertically oriented Ti-Fe-O nanotube arrays on FTO coated glass substrates have been successfully synthesized in ethylene glycol electrolytes. Depending upon the Fe content the bandgap of the resulting films varied from about 3.26 to 2.17 eV. The Ti-Fe oxide nanotube array films demonstrated a photocurrent of 2 mA/cm2 under global AM 1.5 illumination with a 1.2% (two-electrode) photoconversion efficiency, demonstrating a sustained, time-energy normalized hydrogen evolution rate by water splitting of 7.1 mL/W·hr in a 1 M KOH solution with a platinum counter electrode under an applied bias of 0.7 V. The Ti-Fe-O material architecture demonstrates properties useful for hydrogen generation by water photoelectrolysis and, more importantly, this dissertation demonstrates that the general nanotube-array synthesis technique can be extended to other ternary oxide compositions of interest for water photoelectrolysis.

Generation and Characteristics of IV-VI transition Metal Nitride and Carbide Nanoparticles using a Reactive Mesoporous Carbon Nitride

KAUST Repository

Alhajri, Nawal Saad

2016-02-22

Interstitial nitrides and carbides of early transition metals in groups IV–VI exhibit platinum-like electronic structures, which make them promising candidates to replace noble metals in various catalytic reactions. Herein, we present the preparation and characterization of nano-sized transition metal nitries and carbides of groups IV–VI (Ti, V, Nb, Ta, Cr, Mo, and W) using mesoporous graphitic carbon nitride (mpg-C3N4), which not only provides confined spaces for restricting primary particle size but also acts as a chemical source of nitrogen and carbon. We studied the reactivity of the metals with the template under N2 flow at 1023 K while keeping the weight ratio of metal to template constant at unity. The produced nanoparticles were characterized by powder X-ray diffraction, CHN elemental analysis, nitrogen sorption, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results show that Ti, V, Nb, Ta, and Cr form nitride phases with face centered cubic structure, whereas Mo and W forme carbides with hexagonal structures. The tendency to form nitride or carbide obeys the free formation energy of the transition metal nitrides and carbides. This method offers the potential to prepare the desired size, shape and phase of transition metal nitrides and carbides that are suitable for a specific reaction, which is the chief objective of materials chemistry.

HWNet v2: An Efficient Word Image Representation for Handwritten Documents

OpenAIRE

Krishnan, Praveen; Jawahar, C. V.

2018-01-01

We present a framework for learning efficient holistic representation for handwritten word images. The proposed method uses a deep convolutional neural network with traditional classification loss. The major strengths of our work lie in: (i) the efficient usage of synthetic data to pre-train a deep network, (ii) an adapted version of ResNet-34 architecture with region of interest pooling (referred as HWNet v2) which learns discriminative features with variable sized word images, and (iii) rea...

High efficiency charge recuperation for electron beams of MeV energies

International Nuclear Information System (INIS)

MacLachlan, J.A.

1996-05-01

Electron cooling of ion beams with energies of some GeV per nucleon requires high-quality electron beams of MeV energies and currents as high as several amperes. The enormous beam power dictates that the beam current be returned to the high voltage terminal which provides the accelerating potential. The beam is returned to a carefully designed collector within the terminal and biased a few kV positive with respect to it. Thus the load on the HV supply is only the accelerating potential times the sum of the beam current loss and the current used to maintain a graded potential on the accelerating structure. If one employs an electrostatic HV supply like a Van de Graaff with maximum charging current of a few hundred microA, the permissible fractional loss is ∼ 10 -4 . During the 15 years or so the concept of medium energy electron cooling has been evolving, the need to demonstrate the practicability of such high efficiency beam recovery has been recognized. This paper will review some experimental tests and further experiments which have been proposed. The design and status are presented for a new re-circulation experiment at 2 MV being carried out by Fermilab at National Electrostatics Corp

Structural materialization of stainless steel molds and dies by the low temperature high density plasma nitriding

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2015-01-01

Full Text Available Various kinds of stainless steels have been widely utilized as a mold substrate material for injection molding and as a die for mold-stamping and direct stamping processes. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical elements at present. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness of 1400 Hv within its thickness of 40 μm without any formation of nitrides after 14.4 ks plasma nitriding at 693 K. This nitrogen solid-solution treated stainless steel had thermal resistivity even at the mold-stamping conditions up to 900 K.

Effect of microstructure on the high temperature strength of nitride

Indian Academy of Sciences (India)

Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J Rakshit P K Das. Composites Volume ... The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural ...

High-Density Plasma-Induced Etch Damage of GaN

International Nuclear Information System (INIS)

Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

1999-01-01

Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN

Excellent enhancement of corrosion properties of Fe–9Al–30Mn–1.8C alloy in 3.5% NaCl and 10% HCl aqueous solutions using gas nitriding treatment

Energy Technology Data Exchange (ETDEWEB)

Chen, Yung-Chang; Lin, Chih-Lung; Chao, Chuen-Guang; Liu, Tzeng-Feng, E-mail: Lewischen815@gmail.com

2015-06-05

Highlights: • The FeAlMnC alloy was gas-nitrided to simultaneously achieve the aging effect. • Anti-corrosion components AlN, Fe{sub 3}N and Fe{sub 4}N were identified by using GIXRD method. • The present nitrided alloy showed a great improvement in corrosion resistance. • The nitrided sample showed an excellent coherence between nitrided layer and matrix. • The nitrided and then stretched sample maintained satisfactory corrosion behavior. - Abstract: The as-quenched Fe–9.0Al–30Mn–1.8C (in wt.%) alloy gas nitrided at 550 °C for 4 h show excellent corrosion resistance investigated in 3.5% NaCl and 10% HCl solutions. Owing to the high corrosion resistance components, the gas-nitrided layer consists mainly of AlN with a slight amount of Fe{sub 3}N and Fe{sub 4}N identified by grazing incidence X-ray diffraction technique. Therefore, the pitting potential and corrosion potential of the nitrided sample are +1860 mV and +30 mV, respectively. Surprisingly, it is worthy to be pointed out that the nitrided and then tensile-tested alloy reveals very shallow in fracture depth and the excellent lattice coherence is shown between the nitrided layer and the substrate. Moreover, due to the extremely high nitrogen concentration (about 17–18 wt.%) at stretched surface, the corrosion resistance of present gas-nitrided and then tensile-tested alloy is superior to those optimally gas-nitrided or plasma-nitrided high-strength alloy steels, as well as martensitic stainless steels. The nitrided and then stretched alloy still retains a satisfactory corrosion resistance (E{sub pit} = +890 mV; E{sub corr} = +10 mV). Furthermore, only nanoscale-size pits were observed on the corroded surface after being immersed in 10% HCl for 24 h.

Ultra-high efficiency photovoltaic cells for large scale solar power generation.

Science.gov (United States)

Nakano, Yoshiaki

2012-01-01

The primary targets of our project are to drastically improve the photovoltaic conversion efficiency and to develop new energy storage and delivery technologies. Our approach to obtain an efficiency over 40% starts from the improvement of III-V multi-junction solar cells by introducing a novel material for each cell realizing an ideal combination of bandgaps and lattice-matching. Further improvement incorporates quantum structures such as stacked quantum wells and quantum dots, which allow higher degree of freedom in the design of the bandgap and the lattice strain. Highly controlled arrangement of either quantum dots or quantum wells permits the coupling of the wavefunctions, and thus forms intermediate bands in the bandgap of a host material, which allows multiple photon absorption theoretically leading to a conversion efficiency exceeding 50%. In addition to such improvements, microfabrication technology for the integrated high-efficiency cells and the development of novel material systems that realizes high efficiency and low cost at the same time are investigated.

The Importance Of Surface Topography For The Biological Properties Of Nitrided Diffusion Layers Produced On Ti6Al4V Titanium Alloy

Directory of Open Access Journals (Sweden)

Wierzchoń T.

2015-09-01

Full Text Available Diffusion nitrided layers produced on titanium and its alloys are widely studied in terms of their application for cardiac and bone implants. The influence of the structure, the phase composition, topography and surface morphology on their biological properties is being investigated. The article presents the results of a study of the topography (nanotopography of the surface of TiN+Ti2N+αTi(N nitrided layers produced in low-temperature plasma on Ti6Al4V titanium alloy and their influence on the adhesion of blood platelets and their aggregates. The TEM microstructure of the produced layers have been examined and it was demonstrated that the interaction between platelets and the surface of the titanium implants subjected to glow-discharge nitriding can be shaped via modification of the roughness parameters of the external layer of the TiN titanium nitride nanocrystalline zone.

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Energy Technology Data Exchange (ETDEWEB)

Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2014-02-03

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

KAUST Repository

Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; Margalith, T.; Lee, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-01-01

© 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm²), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

KAUST Repository

Leonard, J. T.

2015-07-06

© 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm²), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

The coupling of thermochemistry and phase diagrams for group III-V semiconductor systems. Final report

Energy Technology Data Exchange (ETDEWEB)

Anderson, T.J.

1998-07-21

The project was directed at linking the thermochemical properties of III-V compound semiconductors systems with the reported phase diagrams. The solid-liquid phase equilibrium problem was formulated and three approaches to calculating the reduced standard state chemical potential were identified and values were calculated. In addition, thermochemical values for critical properties were measured using solid state electrochemical techniques. These values, along with the standard state chemical potentials and other available thermochemical and phase diagram data, were combined with a critical assessment of selected III-V systems. This work was culminated with a comprehensive assessment of all the III-V binary systems. A novel aspect of the experimental part of this project was the demonstration of the use of a liquid encapsulate to measure component activities by a solid state emf technique in liquid III-V systems that exhibit high vapor pressures at the measurement temperature.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

Energy Technology Data Exchange (ETDEWEB)

Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

2011-12-15

Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

International Nuclear Information System (INIS)

Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

2011-01-01

Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Controlling the emission wavelength in group III-V semiconductor laser diodes

KAUST Repository

Ooi, Boon S.

2016-12-29

Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Thermionic field emission in gold nitride Schottky nanodiodes

Science.gov (United States)

Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

2012-11-01

We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

Chamber with punches made from polycrystal cubic boron nitrides for Moessbauer study at high hydrostatic pressure

International Nuclear Information System (INIS)

Kapitanov, E.V.; Yakovlev, E.N.

1978-01-01

The design of a high hydrostatic pressure chamber with polycrystallic boron nitride dies weakly absorbing gamma radiation with energies of more than 14 keV is described. The use of this material permits to investigate single- and polycrystal bodies using the Moessbauer effect when the geometry of the experiment remains unchanged and the hydrostatic pressure is up to 70 kbar. The basic units of the chamber are a teflon capsule placed in a container made of a pressed boron and epoxide resin mixture, electric inputs and a die of polycrystal cubic boron nitride. The pressure is transferred to the sample tested through a liquid (petrol or the 4 to 1 mixture of methanole and ethanole) which does not become solid at a pressure below 37 kbar. Basic dimensions of the chamber are given and the dependence of the pressure in the capsule on the force applied to the chamber is also presented

Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

Directory of Open Access Journals (Sweden)

Guler Urcan

2015-01-01

Full Text Available Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average size of 50 nm, which was found to be the optimum size for cellular uptake with gold nanoparticles [1], exhibit plasmon resonance in the biological transparency window and demonstrate a high absorption efficiency. A self-passivating native oxide at the surface of the nanoparticles provides an additional degree of freedom for surface functionalization. The titanium oxide shell surrounding the plasmonic core can create new opportunities for photocatalytic applications.

Thermal plasma synthesis of transition metal nitrides and alloys

International Nuclear Information System (INIS)

Ronsheim, P.; Christensen, A.N.; Mazza, A.

1981-01-01

Applications of arc plasma processing to high-temperature chemistry of Group V nitrides and Si and Ge alloys are studied. The transition metal nitrides 4f-VN, 4f-NbN, and 4f-TaN are directly synthesized in a dc argon-nitrogen plasma from powders of the metals. A large excess of N 2 is required to form stoichiometric 4f-VN, while the Nb and Ta can only be synthesized with a substoichiometric N content. In a dc argon plasma the alloys V 3 Si, VSi 2 , NbSi 2 , NbGe 2 , Cr 3 Si, and Mo 3 Si are obtained from powder mixtures of the corresponding elements. The compounds are identified by x-ray diffraction patterns and particle shape and size are studied by electron microscopy

Crystalline and amorphous carbon nitride films produced by high-energy shock plasma deposition

International Nuclear Information System (INIS)

Bursilll, L.A.; Peng, Julin; Gurarie, V.N.; Orlov, A.V.; Prawer, S.

1995-01-01

High-energy shock plasma deposition techniques are used to produce carbon-nitride films containing both crystalline and amorphous components. The structures are examined by high-resolution transmission electron microscopy, parallel-electron-energy loss spectroscopy and electron diffraction. The crystalline phase appears to be face-centered cubic with unit cell parameter approx. a=0.63nm and it may be stabilized by calcium and oxygen at about 1-2 at % levels. The carbon atoms appear to have both trigonal and tetrahedral bonding for the crystalline phase. There is PEELS evidence that a significant fraction of the nitrogen atoms have sp 2 trigonal bonds in the crystalline phase. The amorphous carbon-nitride film component varies from essentially graphite, containing virtually no nitrogen, to amorphous carbon-nitride containing up to 10 at % N, where the fraction of sp 3 bonds is significant. 15 refs., 5 figs

Preparation of Titanium nitride nanomaterials for electrode and application in energy storage

Directory of Open Access Journals (Sweden)

Shun Tang

Full Text Available The Titanium nitride was made by the carbamide and titanic chloride precursors. XRD results indicate that the precursor ratio N:Ti 3:1 leads to higher crystallinity. SEM and EDX demonstrated that Ti and N elements were distributed uniformly with the ratio of 1:1. The TiN used as the electrode material for supercapacitor was also studied. The specific capacities were changed from 407 F.g−1 to 385 F.g−1, 364 F.g−1 and 312 F.g−1, when the current densities were changed from 1 A.g−1 to 2 A.g−1, 5 A.g−1 and 10 A.g−1, respectively. Chronopotentiometry tests showed high coulombic efficiency. Cycling performance of the TiN electrode was evaluated by CV at a scanning rate of 50 mV.s−1 for 20,000 cycles and there was about 9.8% loss. These results indicate that TiN is a promising electrode material for the supercapacitors. Keywords: Energy storage, Nanomaterials, Anode, Titanium nitride, Supercapacitors

Four-Wave Mixing in Silicon-Rich Nitride Waveguides

DEFF Research Database (Denmark)

Mitrovic, Miranda; Guan, Xiaowei; Ji, Hua

2015-01-01

We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss.......We demonstrate four-wave mixing wavelength conversion in silicon-rich nitride waveguides which are a promising alternative to silicon for nonlinear applications. The obtained conversion efficiency reaches -13.6 dB while showing no significant nonlinear loss....

Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

Science.gov (United States)

Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

2015-10-05

In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

Simultaneous Oxidation and Sequestration of As(III) from Water by Using Redox Polymer-Based Fe(III) Oxide Nanocomposite.

Science.gov (United States)

Zhang, Xiaolin; Wu, Mengfei; Dong, Hao; Li, Hongchao; Pan, Bingcai

2017-06-06

Water decontamination from As(III) is an urgent but still challenging task. Herein, we fabricated a bifunctional nanocomposite HFO@PS-Cl for highly efficient removal of As(III), with active chlorine covalently binding spherical polystyrene host for in situ oxidation of As(III) to As(V), and Fe(III) hydroxide (HFO) nanoparticles (NPs) embedded inside for specific As(V) removal. HFO@PS-Cl could work effectively in a wide pH range (5-9), and other substances like sulfate, chloride, bicarbonate, silicate, and humic acid exert insignificant effect on As(III) removal. As(III) sequestration is realized via two pathways, that is, oxidation to As(V) by the active chlorine followed by specific As(V) adsorption onto HFO NPs, and As(III) adsorption onto HFO NPs followed by oxidation to As(V). The exhausted HFO@PS-Cl could be refreshed for cyclic runs with insignificant capacity loss by the combined regeneration strategy, that is, alkaline solution to rinse the adsorbed As(V) and NaClO solution to renew the host oxidation capability. In addition, fixed-bed experiments demonstrated that the HFO@PS-Cl column could generate >1760 bed volume (BV) effluent from a synthetic As(III)-containing groundwater to meet the drinking water standard (nanocomposites, HFO@PS-N and HFO@D201 could only generate 450 and 600 BV effluents under otherwise identical conditions.

Method for producing polycrystalline boron nitride

International Nuclear Information System (INIS)

Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

1975-01-01

A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

Sb{sup III} - Sb{sup V} Exchange Reaction in Hydrochloric: Acid Solutions; Echange Sb{sup III}-Sb{sup V} dans des Solutions d'Acide Chlorhydrique; Reaktsiya obmena Sb(III) - Sb(V) v rastvorakh khloristovodorodnoj kisloty; Intercambio Sb{sup III}-Sb{sup V} en Soluciones de HCl

Energy Technology Data Exchange (ETDEWEB)

Kambara, T.; Yamaguchi, K.; Yasuba, S. [Shizuoka University, Shizuoka City (Japan)

1965-10-15

The exchange reaction of Sb{sup III} - Sb{sup V} in solutions of low HCl concentrations was studied using {sup 124}Sb as a tracer. The effects of HCl concentrations and chemical forms of antimony on the exchange rate were investigated. The HCl concentrations of the antimony solutions ((Sb{sup III}) =(Sb{sup V}) = 6.8 x 10{sup -4}M) were changed from 0.8 to 4.0M and the half-time for the exchange was measured by plotting log (1 - F) versus time t to calculate the exchange rate assuming the second-ordet reaction. It was found that the exchange rate was sharply increased with the increase of HCl concentrations (at 25 Degree-Sign C, from 0.8 to 2.0M) and at 2.0M HCl concentration the rate reached the maximum, from which the rate was decreased with the increase of HCl concentrations (at 25 Degree-Sign C, from 2.0 to 4.0M). Two sorts of Sb{sup V} species were used for our investigations, i.e. one was used directly after the dilution of 10M HCl Sb{sup V} solution with water and the other was used after 24 hours standing at room temperature from the dilution. (The Sb{sup III} species were also kept standing after preparation from 10M HCl Sb{sup III} solution.) In both cases the maximum rates were found to exist at 2.0M HCl concentration. The rate R{sub 1} for the former (directly after dilution) was 4.5 x 10{sup -6} mole litre{sup -1} min{sup -1} and the rate R{sub 2} for the latter (24 hours standing) was 1.2 x 10{sup -}{sub 6} mole litre. Also the activation energy for these cases was found to be 12.2 kcal/mole and 19.1 kcal/mole. By spectrophotometric studies, the Sb{sup V} species of the former type were found to be mainly consisting of SbCl{sup -}{sub 6} and the species of the latter type to be of SbCl{sub 4}(OH){sup -}{sub 2}, etc. Besides these facts the form of Sb{sup III} species was found to have no influence on the exchange rate. A much sharper increase of the exchange rate was observed when the HCl concentration of the antimony solution was fixed at 0.8M and

Nitridation of vanadium by ion beam irradiation

International Nuclear Information System (INIS)

Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

1994-01-01

The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

Effects of silicon-nitride passivation on the electrical behavior of 0.1-μm pseudomorphic high-electron-mobility transistors

International Nuclear Information System (INIS)

Oh, Jung-Hun; Sul, Woo-Suk; Han, Hyo-Jong; Jang, Hae-Kang; Son, Myung-Sik; Rhee, Jin-Koo; Kim, Sam- Dong

2004-01-01

We examine the effects of surface state formation due to silicon-nitride passivation on the electrical characteristics of GaAs-based 0.1-μm pseudomorphic high-electron-mobility transistors (pHEMTs). In this study, DC and noise characteristic are investigated before and after the passivation of the pHEMTs. After the passivation, we observe significant degradation of noise performance in the frequency range of 55 - 62 GHz. We also observe clear increases in the drain-source saturation current at a gate voltage of 0 V and in the extrinsic transconductance at a drain voltage of 1 V from 325 and 264 to 365 mA/mm and 304 mS/mm, respectively, with no significant variation in pinchoff voltage. We propose that the observed variations in the DC and the noise characteristics are due to the positively charged surface state after deposition of the silicon nitride passivation film. Hydrodynamic device model simulations were performed based upon the proposed mechanisms for the change in electrical behavior, and the calculated results show good agreement with the experimental results.

Hot pressing of uranium nitride and mixed uranium plutonium nitride

International Nuclear Information System (INIS)

Chang, J.Y.

1975-01-01

The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

Rare-earth doped boron nitride nanotubes: Synthesis and characterization

Energy Technology Data Exchange (ETDEWEB)

Silva, Wellington Marcos; Sousa, Edesia Martins Barros de, E-mail: wellingtonmarcos@yahoo.com.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

2016-07-01

Full text: Boron nitride is a heat and chemically resistant refractory compound of boron and nitrogen atoms with the chemical formula BN. This structure exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form (h-BN) corresponding to graphite is the most stable and soft among BN polymorph. However, boron nitride nanotubes (BNNTs) were first time synthesized in 1995 [1] and have a type of one-dimensional (1D) nanostructure. Recently the BNNTs have attracted significant interest for scientific and technological applications due to their Wide bandgap. The Wide-bandgap semiconductors doped with rare-earth are considered as a new type of luminescent material, combining special Wide bandgap semiconducting properties with the rare-earth luminescence feature. BNNTs have a stable wide bandgap of 5.5 eV and super thermal and chemical stabilities, which make BNNTs an ideal nanosized luminescent material [2]. In this study, we report a simple and efficient route for the synthesis of BNNTs doped with samarium and europium. High quality BNNTs doped was produced via CVD technique using NH{sub 3} and N{sub 2} gases as source. Boron amorphous, catalyst and oxides rare-earth powder were used as precursor. Detailed studies involving energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and transmission electron microscope (TEM) were performed in order to characterize the BNNTs as grown. [1] Chopra, N. G.; Luyken, R. J. et al. Science, v. 269, p. 966-967, 1995. [2] Chen, H.; Chen, Y. et al. Adv. Matter. v. 19, p. 1845-1848, 2007. (author)

Rare-earth doped boron nitride nanotubes: Synthesis and characterization

International Nuclear Information System (INIS)

Silva, Wellington Marcos; Sousa, Edesia Martins Barros de

2016-01-01

Full text: Boron nitride is a heat and chemically resistant refractory compound of boron and nitrogen atoms with the chemical formula BN. This structure exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form (h-BN) corresponding to graphite is the most stable and soft among BN polymorph. However, boron nitride nanotubes (BNNTs) were first time synthesized in 1995 [1] and have a type of one-dimensional (1D) nanostructure. Recently the BNNTs have attracted significant interest for scientific and technological applications due to their Wide bandgap. The Wide-bandgap semiconductors doped with rare-earth are considered as a new type of luminescent material, combining special Wide bandgap semiconducting properties with the rare-earth luminescence feature. BNNTs have a stable wide bandgap of 5.5 eV and super thermal and chemical stabilities, which make BNNTs an ideal nanosized luminescent material [2]. In this study, we report a simple and efficient route for the synthesis of BNNTs doped with samarium and europium. High quality BNNTs doped was produced via CVD technique using NH 3 and N 2 gases as source. Boron amorphous, catalyst and oxides rare-earth powder were used as precursor. Detailed studies involving energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and transmission electron microscope (TEM) were performed in order to characterize the BNNTs as grown. [1] Chopra, N. G.; Luyken, R. J. et al. Science, v. 269, p. 966-967, 1995. [2] Chen, H.; Chen, Y. et al. Adv. Matter. v. 19, p. 1845-1848, 2007. (author)

Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

International Nuclear Information System (INIS)

Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

1985-01-01

Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

Efficient generation of volatile cadmium species using Ti(III) and Ti(IV) and application to determination of cadmium by cold vapor generation inductively coupled plasma mass spectrometry (CVG-ICP-MS)†

Science.gov (United States)

Arslan, Zikri; Yilmaz, Vedat; Rose, LaKeysha

2015-01-01

In this study, a highly efficient chemical vapor generation (CVG) approach is reported for determination of cadmium (Cd). Titanium (III) and titanium (IV) were investigated for the first time as catalytic additives along with thiourea, L-cysteine and potassium cyanide (KCN) for generation of volatile Cd species. Both Ti(III) and Ti(IV) provided the highest enhancement with KCN. The improvement with thiourea was marginal (ca. 2-fold), while L-cysteine enhanced signal slightly only with Ti(III) in H2SO4. Optimum CVG conditions were 4% (v/v) HCl + 0.03 M Ti(III) + 0.16 M KCN and 2% (v/v) HNO3 + 0.03 M Ti(IV) + 0.16 M KCN with a 3% (m/v) NaBH4 solution. The sensitivity was improved about 40-fold with Ti(III) and 35-fold with Ti(IV). A limit of detection (LOD) of 3.2 ng L−1 was achieved with Ti(III) by CVG-ICP-MS. The LOD with Ti(IV) was 6.4 ng L−1 which was limited by the blank signals in Ti(IV) solution. Experimental evidence indicated that Ti(III) and Ti(IV) enhanced Cd vapor generation catalytically; for best efficiency mixing prior to reaction with NaBH4 was critical. The method was highly robust against the effects of transition metal ions. No significant suppression was observed in the presence of Co(II), Cr(III), Cu(II), Fe(III), Mn(II), Ni(II) and Zn(II) up to 1.0 μg mL−1. Among the hydride forming elements, no interference was observed from As(III) and Se(IV) at 0.5 μg mL−1 level. The depressive effects from Pb(II) and Sb(III) were not significant at 0.1 μg mL−1 while those from Bi(III) and Sn(II) were marginal. The procedures were validated with determination of Cd by CVG-ICP-MS in a number certified reference materials, including Nearshore seawater (CASS-4), Bone ash (SRM 1400), Dogfish liver (DOLT-4), Mussel tissue (SRM 2976) and Domestic Sludge (SRM 2781). PMID:26251554

Highly Efficient Cooperative Catalysis by Co ^III (Porphyrin) Pairs in Interpenetrating Metal-Organic Frameworks

Energy Technology Data Exchange (ETDEWEB)

Lin, Zekai; Zhang, Zhi-Ming; Chen, Yu-Sheng; Lin, Wenbin (UC); (Xiamen)

2016-12-02

A series of porous twofold interpenetrated In-Co^III(porphyrin) metal–organic frameworks (MOFs) were constructed by in situ metalation of porphyrin bridging ligands and used as efficient cooperative catalysts for the hydration of terminal alkynes. The twofold interpenetrating structure brings adjacent Co^III(porphyrins) in the two networks parallel to each other with a distance of about 8.8 Å, an ideal distance for the simultaneous activation of both substrates in alkyne hydration reactions. As a result, the In-Co^III(porphyrin) MOFs exhibit much higher (up to 38 times) catalytic activity than either homogeneous catalysts or MOF controls with isolated Co^III(porphyrin) centers, thus highlighting the potential application of MOFs in cooperative catalysis.

In situ self-sacrificed template synthesis of vanadium nitride/nitrogen-doped graphene nanocomposites for electrochemical capacitors.

Science.gov (United States)

Liu, Hong-Hui; Zhang, Hong-Ling; Xu, Hong-Bin; Lou, Tai-Ping; Sui, Zhi-Tong; Zhang, Yi

2018-03-15

Vanadium nitride and graphene have been widely used as pseudo-capacitive and electric double-layer capacitor electrode materials for electrochemical capacitors, respectively. However, the poor cycling stability of vanadium nitride and the low capacitance of graphene impeded their practical applications. Herein, we demonstrated an in situ self-sacrificed template method for the synthesis of vanadium nitride/nitrogen-doped graphene (VN/NGr) nanocomposites by the pyrolysis of a mixture of dicyandiamide, glucose, and NH 4 VO 3 . Vanadium nitride nanoparticles of the size in the range of 2 to 7 nm were uniformly embedded into the nitrogen-doped graphene skeleton. Furthermore, the VN/NGr nanocomposites with a high specific surface area and pore volume showed a high specific capacitance of 255 F g -1 at 10 mV s -1 , and an excellent cycling stability (94% capacitance retention after 2000 cycles). The excellent capacitive properties were ascribed to the excellent conductivity of nitrogen-doped graphene, high surface area, high pore volume, and the synergistic effect between vanadium nitride and nitrogen-doped graphene.

High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

Science.gov (United States)

Kang, Jin Ho (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Park, Cheol (Inventor); Bryant, Robert George (Inventor); Lowther, Sharon E. (Inventor)

2015-01-01

Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

Optimization of nitridation conditions for high quality inter-polysilicon dielectric layers

NARCIS (Netherlands)

Klootwijk, J.H.; Bergveld, H.J.; van Kranenburg, H.; Woerlee, P.H.; Wallinga, Hans

1996-01-01

Nitridation of deposited high temperature oxides (HTO) was studied to form high quality inter-polysilicon dielectric layers for embedded non volatile memories. Good quality dielectric layers were obtained earlier by using an optimized deposition of polysilicon and by performing a post-dielectric

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

Science.gov (United States)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

Energy Technology Data Exchange (ETDEWEB)

Hazari, Arnab; Aiello, Anthony; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ng, Tien-Khee; Ooi, Boon S. [Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

2015-11-09

III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Directory of Open Access Journals (Sweden)

Aho Arto

2017-01-01

Full Text Available Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

Methods for enhancing P-type doping in III-V semiconductor films

Science.gov (United States)

Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

2017-08-01

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

Separation of uranium(V I) from binary solution mixtures with thorium(IV), zirconium(IV) and cerium(III) by foaming

International Nuclear Information System (INIS)

Shakir, K.; Aziz, M.; Benyamin, K.

1992-01-01

Foam separation has been investigated for the removal of uranium(V I), thorium(IV), zirconium(IV) and cerium(III) from dilute aqueous solutions at pH values ranging from about I to about II. Sodium laurel sulphate (Na L S) and acetyl trimethyl ammonium bromide (CTAB), being a strong anionic and a strong cationic surfactants, were used as collectors. The results indicate that Na L S can efficiently remove thorium(IV), zirconium(IV) and cerium(III) but not uranium(V I). CTAB, on the other hand, can successfully float only uranium(V I) and zirconium(IV). These differences in flotation properties of the different cations could be used to establish methods for the separation of uranium(V I) from binary mixtures with thorium(IV), zirconium(IV) or cerium(III). The results are discussed in terms of the hydrolytic behaviour of the tested cations and properties of used collectors.2 fig., 1 tab

High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

International Nuclear Information System (INIS)

Sall, Mamour

2013-01-01

Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

Self-assembly graphitic carbon nitride quantum dots anchored on TiO_2 nanotube arrays: An efficient heterojunction for pollutants degradation under solar light

International Nuclear Information System (INIS)

Su, Jingyang; Zhu, Lin; Geng, Ping; Chen, Guohua

2016-01-01

Highlights: • Carbon nitride quantum dots (CNQDs) were decorated onto TiO_2 nanotube arrays (NTAs). • The CNQDs/TiO_2 NTAs exhibits much improved photoelectrochemical activity. • The heterojunction displays efficient removal efficiencies for RhB and phenol. • Pollutants degradation mechanism over CNQDs/TiO_2 NTAs was clarified. - Abstract: In this study, an efficient heterojunction was constructed by anchoring graphitic carbon nitride quantum dots onto TiO_2 nanotube arrays through hydrothermal reaction strategy. The prepared graphitic carbon nitride quantum dots, which were prepared by solid-thermal reaction and sequential dialysis process, act as a sensitizer to enhance light absorption. Furthermore, it was demonstrated that the charge transfer and separation in the formed heterojunction were significantly improved compared with pristine TiO_2. The prepared heterojunction was used as a photoanode, exhibiting much improved photoelectrochemical capability and excellent photo-stability under solar light illumination. The photoelectrocatalytic activities of prepared heterojunction were demonstrated by degradation of RhB and phenol in aqueous solution. The kinetic constants of RhB and phenol degradation using prepared photoelectrode are 2.4 times and 4.9 times higher than those of pristine TiO_2, respectively. Moreover, hydroxyl radicals are demonstrated to be dominant active radicals during the pollutants degradation.

Pressure induced phase transitions in transition metal nitrides: Ab initio study

Energy Technology Data Exchange (ETDEWEB)

Srivastava, Anurag; Chauhan, Mamta [Advanced Material Research Lab, Indian Institute of Information Technology and Management, Gwalior 474010 (India); Singh, R.K. [Department of Physics, ITM University, Gurgaon 122017 (India)

2011-12-15

We have analyzed the stability of transition metal nitrides (TMNs) XN (X = Ti, Zr, Hf, V, Nb, Ta) in their original rocksalt (B1) and hypothetical CsCl (B2) type phases under high compression. The ground state total energy calculation approach of the system has been used through the generalized gradient approximation (GGA) with the Perdew-Burke-Ernzerhof (PBE) type parameterization as exchange correlation functional. In the whole series of nitrides taken into consideration, tantalum nitride is found to be the most stable. We have observed that under compression the original B1-type phase of these nitrides transforms to a B2-type phase. We have also discussed the computation of ground state properties, like the lattice constant (a), bulk modulus (B{sub 0}) and first order pressure derivative of the bulk modulus (B'{sub 0}) of the TMNs and their host elements. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Science.gov (United States)

Saxena, Dhruv

The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

International Nuclear Information System (INIS)

Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

2010-01-01

We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

Synthesis and magnetic properties of PrFe11V1-xTix and their nitrides

International Nuclear Information System (INIS)

Tang, S.L.; Wang, B.W.; Zhang, C.; Jin, X.M.; Zhang, S.Y.; Du, Y.W.

1997-01-01

We have succeeded in synthesizing PrFe 11 V 1-x Ti x (x=0.2 1) compound and their nitrides with the ThMn 12 -type structure. The phase formation and magnetic properties have been investigated by x-ray diffraction, differential thermometric analysis, and magnetic measurement. The stable temperature range of the 1-12 phase for PrFe 11 V 1-x Ti x alloys has been determined as a function of Ti content. PrFe 11 V compounds with the ThMn 12 -type structure do not exist and PrFe 11 Ti compounds with the TnMn 12 -type structure are obtained by annealing in a narrow temperature range between 1303 and 1383 K. Furthermore, 1-12 phase with the ThMn 12 -type structure can be obtained at lower temperature and wider temperature range with decreasing Ti content x (0.2≤x≤1). PrFe 11 V 1-x Ti x N y with x=0.2 1 has a T c of about 730 785 K, B a larger than 8 T and M s in the range 144 148 emu/g. These intrinsic magnetic properties are highly favorable for permanent magnet applications. As a preliminary, an intrinsic coercivity of 5.4 kOe is obtained for PrFe 11 V 0.5 Ti 0.5 N y at room temperature by using mechanical alloying technique. copyright 1997 American Institute of Physics

Structure of metal-rich (001) surfaces of III-V compound semiconductors

DEFF Research Database (Denmark)

Kumpf, C.; Smilgies, D.; Landemark, E.

2001-01-01

The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

Efficient artificial mineralization route to decontaminate Arsenic(III) polluted water - the Tooeleite Way

Science.gov (United States)

Malakar, Arindam; Das, Bidisa; Islam, Samirul; Meneghini, Carlo; de Giudici, Giovanni; Merlini, Marco; Kolen'Ko, Yury V.; Iadecola, Antonella; Aquilanti, Giuliana; Acharya, Somobrata; Ray, Sugata

2016-05-01

Increasing exposure to arsenic (As) contaminated ground water is a great threat to humanity. Suitable technology for As immobilization and removal from water, especially for As(III) than As(V), is not available yet. However, it is known that As(III) is more toxic than As(V) and most groundwater aquifers, particularly the Gangetic basin in India, is alarmingly contaminated with it. In search of a viable solution here, we took a cue from the natural mineralization of Tooeleite, a mineral containing Fe(III) and As(III)ions, grown under acidic condition, in presence of SO42- ions. Complying to this natural process, we could grow and separate Tooeleite-like templates from Fe(III) and As(III) containing water at overall circumneutral pH and in absence of SO42- ions by using highly polar Zn-only ends of wurtzite ZnS nanorods as insoluble nano-acidic-surfaces. The central idea here is to exploit these insoluble nano-acidic-surfaces (called as INAS in the manuscript) as nucleation centres for Tooeleite growth while keeping the overall pH of the aqueous media neutral. Therefore, we propose a novel method of artificial mineralization of As(III) by mimicking a natural process at nanoscale.

GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

Science.gov (United States)

Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

2015-03-01

GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

Electrochemical properties of lanthanum nitride with calcium nitride additions

International Nuclear Information System (INIS)

Lesunova, R.P.; Fishman, L.S.

1986-01-01

This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

Polymer-Derived Boron Nitride: A Review on the Chemistry, Shaping and Ceramic Conversion of Borazine Derivatives

OpenAIRE

Bernard, Samuel; Miele, Philippe

2014-01-01

Boron nitride (BN) is a III-V compound which is the focus of important research since its discovery in the early 19th century. BN is electronic to carbon and thus, in the same way that carbon exists as graphite, BN exists in the hexagonal phase. The latter offers an unusual combination of properties that cannot be found in any other ceramics. However, these properties closely depend on the synthesis processes. This review states the recent developments in the preparation of BN through the che...

Tribological Characteristic of Titanium Alloy Surface Layers Produced by Diode Laser Gas Nitriding

Directory of Open Access Journals (Sweden)

Lisiecki A.

2016-06-01

Full Text Available In order to improve the tribological properties of titanium alloy Ti6Al4V composite surface layers Ti/TiN were produced during laser surface gas nitriding by means of a novel high power direct diode laser with unique characteristics of the laser beam and a rectangular beam spot. Microstructure, surface topography and microhardness distribution across the surface layers were analyzed. Ball-on-disk tests were performed to evaluate and compare the wear and friction characteristics of surface layers nitrided at different process parameters, base metal of titanium alloy Ti6Al4V and also the commercially pure titanium. Results showed that under dry sliding condition the commercially pure titanium samples have the highest coefficient of friction about 0.45, compared to 0.36 of titanium alloy Ti6Al4V and 0.1-0.13 in a case of the laser gas nitrided surface layers. The volume loss of Ti6Al4V samples under such conditions is twice lower than in a case of pure titanium. On the other hand the composite surface layer characterized by the highest wear resistance showed almost 21 times lower volume loss during the ball-on-disk test, compared to Ti6Al4V samples.

Lattice dynamics and electron/phonon interactions in epitaxial transition-metal nitrides

Science.gov (United States)

Mei, Antonio Rodolph Bighetti

the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based upon temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity rho 300K of 12.0 muO-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6x10-8 O-cm K -1, a residual resistivity rhoo below 30 K of 0.78 muO-cm (corresponding to a residual resistivity ratio rho300K/rho 15K = 15), and the layers exhibit a superconducting transition temperature Tc = 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, xi|| = 18 nm and xi⊥ = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7+/-1.7 and 450+/-25 GPa. Transport electron/phonon coupling parameters and Eliashberg spectral functions alphatr2F(ho) are determined for Group-IV TM nitrides TiN, ZrN, and HfN, and the rare-earth (RE) nitride CeN using an inversion procedure based upon temperature-dependent (4 electron/phonon coupling parameters lambdatr vary from 1.11 for ZrN to 0.82 for HfN, 0.73 for TiN, and 0.44 for CeN. The small variation in lambda tr among the TM nitrides and the weak coupling in CeN are consistent with measured Tc values: 10.4 (ZrN), 9.18 (HfN), 5.35 (TiN), and electron/phonon coupling in conventional superconductors. Spectral peaks in alpha2F(ho), corresponding to regions in energy-space for which electrons couple to acoustic hoac and optical ho op phonon modes, are centered at ho ac = 33 and hoop = 57 meV for TiN, 25 and 60 meV for ZrN, 18 and 64 meV for HfN, and 21 and 39 meV for CeN. The acoustic modes soften with

Biotransformation of As (III to As (V and their stabilization in soil with Bacillus sp. XS2 isolated from gold mine tailing of Xinjiang, China

Directory of Open Access Journals (Sweden)

Santosh Kumar Karn

2016-09-01

Full Text Available Xinjiang province is one of the most polluted region in China, this region affected by multi-metal problem, especially arsenic (As affect very badly. Two major forms of As present in the environment As (III and As (V as compared to As (V, As (III is much more toxic. Our aim is to remediate As (III contaminated soil by using As (III resistant microbe, having the high transforming ability for As (III to As (V. An As (III oxidizing bacterium Bacillus sp. XS2, isolated and selected from gold mine tailing which have shown high resistance up to 6400 mg L−1 and efficiently transformed up to 4000 mg L−1 in sucrose low phosphate medium (SLP, higher than any of the previous reported Bacillus sp.. In soil, we found that XS2 successfully transformed up to 81% of soluble exchangeable fraction within 10 d in contaminated soil (with 500 mg kg−1, which makes it potential microbe for the removal of contaminated site with arsenic in the environment. Further XS2 was characterized for their molecular basis of resistance and we establish that XS2 having arsenic oxidase enzyme activity which is accountable for the detoxification of arsenic at high concentration and provide resistance to the bacterium. Gene encoding arsenic oxidase (aioA-gene was also amplified from this bacterium using polymerase chain reaction (PCR with degenerate primer. The aioA-gene is specific for the arsenite-oxidizing bacteria. The deduced amino acid sequence had shown 42% similarity with pseudomonas sp. arsenic oxidase. Further, the strain was characterized by 16s rRNA gene sequence analysis and shown maximum similarity with Bacillus sp.

Second-harmonic generation in substoichiometric silicon nitride layers

Science.gov (United States)

Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

2013-03-01

Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature

Science.gov (United States)

Lv, Meizhe; Xu, Bin; Cai, Lichao; Guo, Xiaofei; Yuan, Xingdong

2018-05-01

After rapid cooling, cubic boron nitride (c-BN) single crystals synthesized under high pressure and high temperature (HPHT) are wrapped in the white film powders which are defined as growth interface. In order to make clear that the transition mechanism of c-BN single crystals, the variation of B and N atomic hybrid states in the growth interface is analyzed with the help of auger electron spectroscopy in the Li-based system. It is found that the sp2 fractions of B and N atoms decreases, and their sp3 fractions increases from the outer to the inner in the growth interface. In addition, Lithium nitride (Li3N) are not found in the growth interface by X-ray diffraction (XRD) experiment. It is suggested that lithium boron nitride (Li3BN2) is produced by the reaction of hexagonal boron nitride (h-BN) and Li3N at the first step, and then B and N atoms transform from sp2 into sp3 state with the catalysis of Li3BN2 in c-BN single crystals synthesis process.

Highly efficient electron vortex beams generated by nanofabricated phase holograms

Energy Technology Data Exchange (ETDEWEB)

Grillo, Vincenzo, E-mail: vincenzo.grillo@nano.cnr.it [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); CNR-IMEM Parco Area delle Scienze 37/A, I-43124 Parma (Italy); Carlo Gazzadi, Gian [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); Karimi, Ebrahim [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); Department of Physics, University of Ottawa, 150 Louis Pasteur, Ottawa, Ontario K1N 6N5 (Canada); Mafakheri, Erfan [Dipartimento di Fisica Informatica e Matematica, Università di Modena e Reggio Emilia, via G Campi 213/a, I-41125 Modena (Italy); Boyd, Robert W. [Department of Physics, University of Ottawa, 150 Louis Pasteur, Ottawa, Ontario K1N 6N5 (Canada); Frabboni, Stefano [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); Dipartimento di Fisica Informatica e Matematica, Università di Modena e Reggio Emilia, via G Campi 213/a, I-41125 Modena (Italy)

2014-01-27

We propose an improved type of holographic-plate suitable for the shaping of electron beams. The plate is fabricated by a focused ion beam on a silicon nitride membrane and introduces a controllable phase shift to the electron wavefunction. We adopted the optimal blazed-profile design for the phase hologram, which results in the generation of highly efficient (25%) electron vortex beams. This approach paves the route towards applications in nano-scale imaging and materials science.

Highly efficient electron vortex beams generated by nanofabricated phase holograms

International Nuclear Information System (INIS)

Grillo, Vincenzo; Carlo Gazzadi, Gian; Karimi, Ebrahim; Mafakheri, Erfan; Boyd, Robert W.; Frabboni, Stefano

2014-01-01

We propose an improved type of holographic-plate suitable for the shaping of electron beams. The plate is fabricated by a focused ion beam on a silicon nitride membrane and introduces a controllable phase shift to the electron wavefunction. We adopted the optimal blazed-profile design for the phase hologram, which results in the generation of highly efficient (25%) electron vortex beams. This approach paves the route towards applications in nano-scale imaging and materials science

Flexible InGaN nanowire membranes for enhanced solar water splitting

KAUST Repository

Elafandy, Rami T.

2018-05-30

III-Nitride nanowires (NWs) have recently emerged as potential photoelectrodes for efficient solar hydrogen generation. While InGaN NWs epitaxy over silicon is required for high crystalline quality and economic production, it leads to the formation of the notorious silicon nitride insulating interface as well as low electrical conductivity which both impede excess charge carrier dynamics and overall device performance. We tackle this issue by developing, for the first time, a substrate-free InGaN NWs membrane photoanodes, through liftoff and transfer techniques, where excess charge carriers are efficiently extracted from the InGaN NWs through a proper ohmic contact formed with a high electrical conductivity metal stack membrane. As a result, compared to conventional InGaN NWs on silicon, the fabricated free-standing flexible membranes showed a 10-fold increase in the generated photocurrent as well as a 0.8 V cathodic shift in the onset potential. Through electrochemical impedance spectroscopy, accompanied with TEM-based analysis, we further demonstrated the detailed enhancement within excess charge carrier dynamics of the photoanode membranes. This novel configuration in photoelectrodes demonstrates a novel pathway for enhancing the performance of III-nitrides photoelectrodes to accelerate their commercialization for solar water splitting.

Pt atoms stabilized on hexagonal boron nitride as efficient single-atom catalysts for CO oxidation: A first-principles investigation

KAUST Repository

Liu, Xin

2015-01-01

Taking CO oxidation as a probe, we investigated the electronic structure and reactivity of Pt atoms stabilized by vacancy defects on hexagonal boron nitride (h-BN) by first-principles-based calculations. As a joint effect of the high reactivity of both a single Pt atom and a boron vacancy defect (PtBV), the Pt-N interaction is -4.40 eV and is already strong enough to prohibit the diffusion and aggregation of the stabilized Pt atom. Facilitated by the upshifted Pt-d states originated from the Pt-N interaction, the barriers for CO oxidation through the Langmuir-Hinshelwood mechanism for formation and dissociation of peroxide-like intermediate and the regeneration are as low as 0.38, 0.10 and 0.04 eV, respectively, suggesting the superiority of PtBV as a catalyst for low temperature CO oxidation.

CO Cleavage and CO2 Functionalization under Mild Conditions by a Multimetallic CsU2 Nitride Complex.

Science.gov (United States)

Falcone, Marta; Chatelain, Lucile; Scopelliti, Rosario; Mazzanti, Marinella

2017-04-26

Novel efficient chemical processes involving cheap and widely accessible carbon dioxide or carbon monoxide under mild conditions for the production of valuable chemical products are highly desirable in the current energetic context. Uranium nitride materials act as high activity catalysts in the Haber-Bosch process but the reactivity of molecular nitride compounds remains unexplored. Here we review recent results obtained in our group showing that a multimetallic nitride complex [Cs{[U(OSi(OtBu)3)3]2(μ-N)}] (1) with a CsUIV-N-UIV core, is able to promote N-C bond formation due to its strong nucleophile behaviour. In particular, complex 1, in the presence of excess CO2 leads to a remarkable dicarbamate product. The multimetallic CsUIV-N-UIV nitride also readily cleaves the C≡O bond under mild conditions.

The mechanisms of detoxification of As(III), dimethylarsinic acid (DMA) and As(V) in the microalga Chlorella vulgaris.

Science.gov (United States)

Pantoja Munoz, L; Purchase, D; Jones, H; Raab, A; Urgast, D; Feldmann, J; Garelick, H

2016-06-01

The response of Chlorella vulgaris when challenged by As(III), As(V) and dimethylarsinic acid (DMA) was assessed through experiments on adsorption, efflux and speciation of arsenic (reduction, oxidation, methylation and chelation with glutathione/phytochelatin [GSH/PC]). Our study indicates that at high concentrations of phosphate (1.62mM of HPO4(2-)), upon exposure to As(V), cells are able to shift towards methylation of As(V) rather than PC formation. Treatment with As(V) caused a moderate decrease in intracellular pH and a strong increase in the concentration of free thiols (GSH). Passive surface adsorption was found to be negligible for living cells exposed to DMA and As(V). However, adsorption of As(III) was observed to be an active process in C. vulgaris, because it did not show saturation at any of the exposure periods. Chelation of As(III) with GS/PC and to a lesser extent hGS/hPC is a major detoxification mechanism employed by C. vulgaris cells when exposed to As(III). The increase of bound As-GS/PC complexes was found to be strongly related to an increase in concentration of As(III) in media. C. vulgaris cells did not produce any As-GS/PC complex when exposed to As(V). This may indicate that a reduction step is needed for As(V) complexation with GSH/PC. C. vulgaris cells formed DMAS(V)-GS upon exposure to DMA independent of the exposure period. As(III) triggers the formation of arsenic complexes with PC and homophytochelatins (hPC) and their compartmentalisation to vacuoles. A conceptual model was devised to explain the mechanisms involving ABCC1/2 transport. The potential of C. vulgaris to bio-remediate arsenic from water appeared to be highly selective and effective without the potential hazard of reducing As(V) to As(III), which is more toxic to humans. Copyright © 2016 Elsevier B.V. All rights reserved.

Construction of fiber-shaped silver oxide/tantalum nitride p-n heterojunctions as highly efficient visible-light-driven photocatalysts.

Science.gov (United States)

Li, Shijie; Hu, Shiwei; Xu, Kaibing; Jiang, Wei; Liu, Yu; Leng, Zhe; Liu, Jianshe

2017-10-15

Constructing novel and efficient p-n heterojunction photocatalysts has stimulated great interest. Herein, we report the design and synthesis of fiber-shaped Ag 2 O/Ta 3 N 5 p-n heterojunctions as a kind of efficient photocatalysts. Ta 3 N 5 nanofibers were prepared by an electrospinning-calcination-nitridation method, and then the in-situ anchoring of Ag 2 O on their surfaces was realized by a facile deposition method. The resulting Ag 2 O/Ta 3 N 5 heterojunctions were comprised of porous Ta 3 N 5 nanofibers (diameter: ∼150nm) and Ag 2 O nanoparticles (size: ∼12nm). The photocatalytic activity of these heterojunctions were studied by decomposing rhodamine B (RhB) dye and tetracycline (TC) antibiotic under visible light (λ>400nm). In all the samples, the heterojunction with Ag 2 O/Ta 3 N 5 molar ratio of 0.2/1 displays the best activity. It is found that a synergistic effect contributes to the effective suppression of charges recombination between Ta 3 N 5 and Ag 2 O, leading to an enhanced photocatalytic activity with good stability. The photogenerated holes (h + ) and superoxide radicals (O 2 - ) play dominant roles in the photocatalytic process. These p-n heterojunctions will have great potential for environmental remediation because of the facile preparation process and exceptional photocatalytic activity. Copyright © 2017 Elsevier Inc. All rights reserved.

Functionalizing carbon nitride with heavy atom-free spin converters for enhanced 1 O 2 generation

Energy Technology Data Exchange (ETDEWEB)

Wu, Wenting; Han, Congcong; Zhang, Qinhua; Zhang, Qinggang; Li, Zhongtao; Gosztola, David J.; Wiederrecht, Gary P.; Wu, Mingbo

2018-05-01

advanced photosensitizers for singlet oxygen (1O2) generation. However, the intersystem crossing (ISC) process is quite insufficient in carbon nitride, limiting the 1O2 generation. Here, we report a facile and general strategy to confined benzophenone as a heavy atom-free spin converter dopant in carbon nitride via the facile copolymerization. With proper energy level matching between the heavy atom-free spin converter and various ligands based on carbon nitride precursors, the proper combination can decrease the singlet-triplet energy gap (DEST) and hence generate 1O2 effectively. Due to its significant and selectivity for 1O2 generation, the as-prepared carbon nitride-based photosensitizer shows a high selective photooxidation activity for 1,5-dihydroxy-naphthalene (1,5-DHN). The product yield reached 71.8% after irradiation for 60 min, which was higher than that of cyclometalated PtII complexes (53.6%) in homogeneous photooxidation. This study can broaden the application of carbon nitride in the field of selective heterogeneous photooxidation due to simple operation, low cost, and high efficiency, making it a strong candidate for future industrialization.

Deformation-Induced Dissolution and Precipitation of Nitrides in Austenite and Ferrite of a High-Nitrogen Stainless Steel

Science.gov (United States)

Shabashov, V. A.; Makarov, A. V.; Kozlov, K. A.; Sagaradze, V. V.; Zamatovskii, A. E.; Volkova, E. G.; Luchko, S. N.

2018-02-01

Methods of Mössbauer spectroscopy and electron microscopy have been used to study the effect of the severe plastic deformation by high pressure torsion in Bridgman anvils on the dissolution and precipitation of chromium nitrides in the austenitic and ferritic structure of an Fe71.2Cr22.7Mn1.3N4.8 high-nitrogen steel. It has been found that an alternative process of dynamic aging with the formation of secondary nitrides affects the kinetics of the dissolution of chromium nitrides. The dynamic aging of ferrite is activated with an increase in the deformation temperature from 80 to 573 K.

Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

Science.gov (United States)

Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

2015-10-01

Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

A III-V nanowire channel on silicon for high-performance vertical transistors.

Science.gov (United States)

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Routes to Ultrahigh Efficiency Photovoltaic and Photoelectrochemical Devices

Energy Technology Data Exchange (ETDEWEB)

Eisler, Carissa; Lloyd, John; Flowers, Cris; Darbe, Sunita; Warmann, Emily; Verlage, Erik; Fountaine, Kate; Hu, Shu; Lewis, Nathan; Atwater, Harry

2014-10-15

We discuss ‘full spectrum’ photovoltaic modules that leverage low-cost III-V compound semiconductor cells, efficient optics and unconventional fabrication/assembly methods, and discuss advances in photoelectrochemical water-splitting with high efficiency.

Relationship between type III-V radio and hard X-ray bursts

International Nuclear Information System (INIS)

Stewart, R.T.

1978-01-01

Type III-V radio bursts are found to be closely associated with impulsive hard X-ray bursts. Probably 0.1% to 1% of the fast electrons in the X-ray source region escape to heights >0.1 solar radii in the corona and excite the type III-V burst. (Auth.)

Ionic nitriding of high chromium martensitic stainless steels

International Nuclear Information System (INIS)

Bruhl, S.P; Charadia, R; Vaca, L.S; Cimetta, J

2008-01-01

Martensitic stainless steels are used in industrial applications where resistance to corrosion and mechanical resistance are needed simultaneously. These steels are normally used in tempering and annealing condition which gives them hardnesses of 500 and 600 HV (about 54 HRC). Ionic nitriding is an assisted diffusion technique that has recently been successfully applied to harden austenitic stainless steels without reducing their resistance to corrosion. The application with AISI 420 martensitic steels has not given good results yet, because in most cases, it affects their corrosion resistance. This work presents the results of the pulsed nitriding of martensitic steels with a higher chrome content, such as the M340 and M333 Boehler steels and they are compared with the same materials after tempering and annealing, without nitriding. The influence of the variations in the parameters of the process, such as the percentage of active time in the pulsed wave, partial nitrogen pressure, current density and effective tension in the microstructure, hardness and wear and corrosion resistance was studied. The microstructure was studied with an optic microscope; the wear resistance with abrasion tests following ASTM G-65 and corrosion with 100 hour long saline haze tests, in a device built according to ASTM B117. Hardness was found to rise to values of 1000 to 1350 HV in all the steels after ionic nitriding, the modified layers oscillated from 3 to 15 microns. As a result, wear resistance also increased, with differences depending on the microstructure and the thickness of the modified layer. However, corrosion resistance was not good, except in the case of the M333 steel test piece with less hardness and a less thick nitrided layer without a noticeable interphase (au)

Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

DEFF Research Database (Denmark)

Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

2004-01-01

Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

Superconducting structure with layers of niobium nitride and aluminum nitride

International Nuclear Information System (INIS)

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

Hybrid processing of Ti-6Al-4V using plasma immersion ion implantation combined with plasma nitriding

Directory of Open Access Journals (Sweden)

Silva Maria Margareth da

2006-01-01

Full Text Available Based on the fact that the Ti-6Al-4V alloy has good mechanical properties, excellent resistance to corrosion and also excellent biocompatibility, however with low wear resistance, this work aims to test plasma processes or combination of plasma and ion implantation processes to improve these characteristics. Two types of processing were used: two steps PIII (Plasma Immersion Ion Implantation combined with PN (Plasma Nitriding and single step PIII treatment. According to Auger Electron Spectroscopy (AES results, the best solution was obtained by PIII for 150 minutes resulting in ~ 65 nm of nitrogen implanted layer, while the sample treated with PIII (75 minutes and PN (75 minutes reached ~ 35 nm implanted layer. The improvement of surface properties could also be confirmed by the nanoindentation technique, with values of hardness increasing for both processes. AFM (Atomic Force Microscopy characterization showed that the single step PIII process presented greater efficiency than the duplex process (PIII + PN, probably due to the sputtering occurring during the second step (PN removing partially the implanted layer of first step (PIII.

Cacotheline as an oxidimetric reagent. Determination of Sn(II), Cu(I), Ti(III), Fe(II), V(II) and V(III)

International Nuclear Information System (INIS)

Nemani Murty, K.; Yedluri Rao, P.; Geddada Chalam, K.

1982-01-01

Sn(II), Ti(III), Cu(I),Fe(II), V(III) and V(II) can be titrated potentiometrically with cacotheline in 1-4 M hydrochloric acid, 0.5-2 M hydrochloric acid, 0.5-1.5 M sulphuric acid in presence of 4 ml of 10% EDTA solution in a total volume of 50 ml, 9-10 M phosphoric acid, 4-8 M acetic acid and 3-8 M acetic acid respectively. Cacotheline can be used for the assay of tin plate and solder. The cacotheline undergoes a 2-electron reduction reaction. A cacotheline solution (0.005 M) in 0.02 M hydrochloric acid is fairly stable for several months. The conditional redox potentials of cacotheline have been determined in sulphuric, phosphoric and acetic acid medium. (Author)

Polarization-engineered GaN/InGaN/GaN tunnel diodes

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

2010-01-01

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

New insights into thorium and uranium oxo-arsenic (III/V) and oxo-phosphates (V) crystal chemistry

International Nuclear Information System (INIS)

Yu, Na

2015-01-01

The fundamental chemistry of actinides is of great interest owing to the diverse number of valence states and complex coordination chemistry of the actinides. The phases based on actinides and oxo-salt fragments have been under thorough investigation in the last decades. These compounds can be widely found in nature and they affect the migration process of actinides in nature. A better understanding of the fundamental coordination chemistry of actinide compounds with oxo-salts of group V elements is not only important for understanding the actinides behavior within the migration process but can also be used to understand actinide properties in phosphate ceramics. Concerning the radioactive issues, the less radioactive early actinides (i.e. U, Th) can be taken as modeling elements to study the crystal chemistry of the transuranic elements (Np, Pu) without the major handling problems. This can be done as Th(IV) has a very similar coordination chemistry with An(IV) and U(VI) can be chosen as a modeling element for transuranic elements in higher valence states. Therefore, a systematic research on the actinides (U, Th) bearing phases with tetrahedral oxo-anions such as phosphates and arsenates have been performed in this work. High temperature (HT) solid state reaction, High pressure high temperature (HP-HT) solid state reaction and the hydrothermal method were the methods of choice for synthesizing actinide bearing oxo-arsenic(III/V) and oxo- phosphorus(V) phases in the past three years. As a result, numerous novel compounds containing actinides were obtained. The structures of all compounds were determined using single crystal X-ray diffraction data. Raman spectroscopy, EDS, DSC and high temperature powder X-ray diffraction (HT-PXRD) measurements were implemented to characterize the chemical and physical properties of the obtained compounds. The core of this dissertation is a fundamental study of the crystal chemistry of actinides (Th, U) oxo-arsenic (III/V) and oxo-phosphate(V

Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

Science.gov (United States)

Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

2015-12-22

Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

Nitride coating enhances endothelialization on biomedical NiTi shape memory alloy

Energy Technology Data Exchange (ETDEWEB)

Ion, Raluca [University of Bucharest, Department of Biochemistry and Molecular Biology, 91-95 Spl. Independentei, 050095 Bucharest (Romania); Luculescu, Catalin [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor, P.O. Box MG-36, 077125 Magurele-Bucharest (Romania); Cimpean, Anisoara, E-mail: anisoara.cimpean@bio.unibuc.ro [University of Bucharest, Department of Biochemistry and Molecular Biology, 91-95 Spl. Independentei, 050095 Bucharest (Romania); Marx, Philippe [AMF Company, Route de Quincy, 18120 Lury-sur-Arnon (France); Gordin, Doina-Margareta; Gloriant, Thierry [INSA Rennes, UMR CNRS 6226 ISCR, 20 Avenue des Buttes de Coësmes, 35708 Rennes Cedex 7 (France)

2016-05-01

Surface nitriding was demonstrated to be an effective process for improving the biocompatibility of implantable devices. In this study, we investigated the benefits of nitriding the NiTi shape memory alloy for vascular stent applications. Results from cell experiments indicated that, compared to untreated NiTi, a superficial gas nitriding treatment enhanced the adhesion of human umbilical vein endothelial cells (HUVECs), cell spreading and proliferation. This investigation provides data to demonstrate the possibility of improving the rate of endothelialization on NiTi by means of nitride coating. - Highlights: • Gas nitriding process of NiTi is competent to promote cell spreading. • Surface nitriding of NiTi is able to stimulate focal adhesion formation and cell proliferation. • Similar expression pattern of vWf and eNOS was exhibited by bare and nitrided NiTi. • Gas nitriding treatment of NiTi shows promise for better in vivo endothelialization.

Reduction of bonding resistance of two-terminal III-V/Si tandem solar cells fabricated using smart-stack technology

Science.gov (United States)

Baba, Masaaki; Makita, Kikuo; Mizuno, Hidenori; Takato, Hidetaka; Sugaya, Takeyoshi; Yamada, Noboru

2017-12-01

This paper describes a method that remarkably reduces the bonding resistance of mechanically stacked two-terminal GaAs/Si and InGaP/Si tandem solar cells, where the top and bottom cells are bonded using a Pd nanoparticle array. A transparent conductive oxide (TCO) layer, which partially covers the surface of the Si bottom cell below the electrodes of the III-V top cell, significantly enhances the fill factor (FF) and cell conversion efficiency. The partial TCO layer reduces the bonding resistance and thus, increases the FF and efficiency of InGaP/Si by factors of 1.20 and 1.11, respectively. Eventually, the efficiency exceeds 15%. Minimizing the optical losses at the bonding interfaces of the TCO layer is important in the fabrication of high-efficiency solar cells. To help facilitate this, the optical losses in the tandem solar cells are thoroughly characterized through optical simulations and experimental verifications.

Effect of ion nitridation process on hardness and the corrosion resistance of biomaterials

International Nuclear Information System (INIS)

Wirjoadi; Lely Susita; Bambang Siswanto; Sudjatmoko

2012-01-01

Ion nitriding process has been performed on metal biomaterials to improve their mechanical properties of materials, particularly to increase hardness and corrosion resistance. This metallic biomaterials used for artificial bone or a prosthetic graft and used as devices of orthopedic biomaterials are usually of 316L SS metal-type and Ti-6Al-4V alloy. The purpose of this study is to research the development and utilization of ion nitridation method in order to get iron and titanium nitride thin films on the metallic biomaterials for artificial bone that has wear resistance and corrosion resistance is better. Microhardness of the samples was measured using a microhardness tester, optimum hardness of SS 316L samples are about 582 VHN, this was obtained at the nitriding temperature of 500 °C, the nitriding time of 3 hours and the nitrogen gas pressure of 1.6 mbar, while optimum hardness of Ti-6Al-4V alloy is 764 VHN, this was obtained at the nitriding temperature of 500 °C, the nitriding time of 4 hours and the nitrogen gas pressure of 1.6 mbar. The hardness value of SS 316L sample and Ti-6Al-4V alloy increase to 143% and 153%, if compared with standard samples. The optimum corrosion resistance at temperature of 350 °C for SS 316L and Ti-6Al-4V are 260,12 and 110,49 μA/cm 2 or corrosion rate are 29,866 and 15,189 mpy, respectively. (author)

II-VI/III-V Heterojunction Lasers

National Research Council Canada - National Science Library

Gunshor, Robert

1999-01-01

... in both. In the second part of the program we studied the growth and the optical evaluation of wide bandgap nitride heterostructures, an effort which included the first reporting of a GaN-based laser to be fabricated...

Cleavage mechanoluminescence in elemental and III-V semiconductors

International Nuclear Information System (INIS)

Chandra, B.P.; Patel, R.P.; Gour, Anubha S.; Chandra, V.K.; Gupta, R.K.

2003-01-01

The present paper reports the theory of mechanoluminescence (ML) produced during cleavage of elemental and III-V semiconductors. It seems that the formation of crack-induced localized states is responsible for the ML excitation produced during the cleavage of elemental and III-V semiconductors. According to this mechanism, as the atoms are drawn away from each other in an advancing crack tip, the decreasing wave function overlap across the crack may result in localized states which is associated with increasing electron energy. If the energy of these localized states approach that of the conduction band, transition to the conduction band via tunnelling would be possible, creating minority carriers, and consequently the electron-hole recombination may give rise to mechanoluminescence. When an elemental or III-V semiconductor is cleaved, initially the ML intensity increases with time, attains a peak value I m at the time t m corresponding to completion of the cleavage of the semiconductor, and then it decreases following power law decay. Expressions are derived for the ML intensity I m corresponding to the peak of the ML intensity versus time curve and for the total ML intensity I T . It is shown that both I m and I T should increase directly with the area of the newly created surfaces of the crystals. From the measurements of the ML intensity, the velocity of crack propagation in material can be determined by using the relation v=H/t m

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

Institute of Scientific and Technical Information of China (English)

Wang Liang-Yong; Liu Bo; Song Zhi-Tang; Liu Wei-Li; Feng Song-Lin; David Huang; S.V Babu

2011-01-01

We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre-and the post-polished wafer surfaces as well as the pre-and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2018-01-01

. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

Effective Duration of Gas Nitriding Process on AISI 316L for the Formation of a Desired Thickness of Surface Nitrided Layer

Directory of Open Access Journals (Sweden)

Mahmoud Hassan R. S.

2014-07-01

Full Text Available High temperature gas nitriding performed on AISI 316L at the temperature of 1200°C. The microstructure of treated AISI 316L samples were observed to identify the formation of the microstructure of nitrided surface layer. The grain size of austenite tends to be enlarged when the nitriding time increases, but the austenite single phase structure is maintained even after the long-time solution nitriding. Using microhardness testing, the hardness values drop to the center of the samples. The increase in surface hardness is due to the high nitrogen concentration at or near the surface. At 245HV, the graph of the effective duration of nitriding process was plotted to achieve the maximum depth of nitrogen diffuse under the surface. Using Sigma Plot software best fit lines of the experimental result found and plotted to find out effective duration of nitriding equation as Y=1.9491(1-0.7947x, where Y is the thickness of nitrided layer below the surface and X is duration of nitriding process. Based on this equation, the duration of gas nitriding process can be estimated to produce desired thickness of nitrided layer.

Evaluation of the Effect of Different Plasma-Nitriding Parameters on the Properties of Low-Alloy Steel

Science.gov (United States)

Zdravecká, Eva; Slota, Ján; Solfronk, Pavel; Kolnerová, Michaela

2017-07-01

This work is concerned with the surface treatment (ion nitriding) of different plasma-nitriding parameters on the characteristics of DIN 1.8519 low-alloy steel. The samples were nitrided from 500 to 570 °C for 5-40 h using a constant 25% N2-75% H2 gaseous mixture. Lower temperature (500-520 °C) favors the formation of compound layers of γ' and ɛ iron nitrides in the surface layers, whereas a monophase γ'-Fe4 N layer can be obtained at a higher temperature. The hardness of this layer can be obtained when nitriding is performed at a higher temperature, and the hardness decreases when the temperature increases to 570 °C. These results indicate that pulsed plasma nitriding is highly efficient at 550 °C and can form thick and hard nitrided layers with satisfactory mechanical properties. The results show the optimized nitriding process at 540 °C for 20 h. This process can be an interesting means of enhancing the surface hardness of tool steels to forge dies compared to stamped steels with zinc coating with a reduced coefficient of friction and improving the anti-sticking properties of the tool surface.

Hydrotreatment activities of supported molybdenum nitrides and carbides

Energy Technology Data Exchange (ETDEWEB)

Dolce, G.M.; Savage, P.E.; Thompson, L.T. [University of Michigan, Ann Arbor, MI (United States). Dept. of Chemical Engineering

1997-05-01

The growing need for alternative sources of transportation fuels encourages the development of new hydrotreatment catalysts. These catalysts must be active and more hydrogen efficient than the current commercial hydrotreatment catalysts. Molybdenum nitrides and carbides are attractive candidate materials possessing properties that are comparable or superior to those of commercial sulfide catalysts. This research investigated the catalytic properties of {gamma}-Al{sub 2}O{sub 3}-supported molybdenum nitrides and carbides. These catalysts were synthesized via temperature-programmed reaction of supported molybdenum oxides with ammonia or methane/hydrogen mixtures. Phase constituents and compositions were determined by X-ray diffraction, elemental analysis, and neutral activation analysis. Oxygen chemisorption was used to probe the surface properties of the catalysts. Specific activities of the molybdenum nitrides and carbides were competitive with those of a commercial sulfide catalyst for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). For HDN and HDS, the catalytic activity on a molybdenum basis was a strong inverse function of the molybdenum loading. Product distributions of the HDN, HDO and HDS of a variety of heteroatom compounds indicated that several of the nitrides and carbides were more hydrogen efficient than the sulfide catalyst. 35 refs., 8 figs., 7 tabs.

Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide

DEFF Research Database (Denmark)

Lin, Li; Ou, Yiyu; Aagesen, Martin

2017-01-01

A nano-patterning approach on silicon dioxide (SiO2) material, which could be used for the selective growth of III-V nanowires in photovoltaic applications, is demonstrated. In this process, a silicon (Si) stamp with nanopillar structures was first fabricated using electron-beam lithography (EBL....... In addition, high time efficiency can be realized by one-spot electron-beam exposure in the EBL process combined with NIL for mass production. Furthermore, the one-spot exposure enables the scalability of the nanostructures for different application requirements by tuning only the exposure dose. The size...

Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

2015-05-01

We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

III-V/Si wafer bonding using transparent, conductive oxide interlayers

Energy Technology Data Exchange (ETDEWEB)

Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

2015-06-29

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

Facile fabrication of ordered mesoporous graphitic carbon nitride for RhB photocatalytic degradation

Energy Technology Data Exchange (ETDEWEB)

Luo, Lei; Zhang, Anfeng [State Key Laboratory of Fine Chemicals, PSU-DUT Joint Center for Energy Research, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); Janik, Michael J. [EMS Energy Institute, PSU-DUT Joint Center for Energy Research and Department of Energy & Mineral Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Li, Keyan [State Key Laboratory of Fine Chemicals, PSU-DUT Joint Center for Energy Research, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); Song, Chunshan [State Key Laboratory of Fine Chemicals, PSU-DUT Joint Center for Energy Research, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China); EMS Energy Institute, PSU-DUT Joint Center for Energy Research and Department of Energy & Mineral Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Guo, Xinwen, E-mail: guoxw@dlut.edu.cn [State Key Laboratory of Fine Chemicals, PSU-DUT Joint Center for Energy Research, School of Chemical Engineering, Dalian University of Technology, Dalian 116024 (China)

2017-02-28

Highlights: • Ordered mesoporous graphitic carbon nitrides with S{sub BET} = 279.3 m{sup 2}/g were prepared. • Enhanced photocatalytic activity and reusability were presented. • Improved S{sub BET} and charge carrier separation efficiency contribute to the activity. - Abstract: Ordered mesoporous graphitic carbon nitrides were prepared by directly condensing the uniform mixtures of melamine and KIT-6. After removal of the KIT-6 sacrificial template, the carbon nitrides were characterized with TEM, N{sub 2} physical adsorption, XRD, FT-IR, XPS, UV–vis and PL spectrometries, and tested for their RhB photocatalytic degradation activity. Together, these characterizations confirmed the as-prepared tunable mesoporous materials with enhanced charge separation efficiency and superior photocatalytic performance. Compared with a conventional bulk g-C{sub 3}N{sub 4}, ordered mesoporous g-C{sub 3}N{sub 4} exhibits a larger specific surface area of 279.3 m{sup 2}/g and a pore size distribution about 4.0 nm and 13.0 nm. Meanwhile, the reduced bandgap energy of 2.77 eV and lower photogenerated electron-hole pair recombination frequency were evidenced by UV–Vis and PL spectra. The RhB photocatalytic degradation activity maximizes with a mass ratio of KIT-6/melamine of 80% (KCN80), and the kinetic constant reaches 0.0760 min{sup −1} which is 16 times higher than that of the bulk sample. Reusability of KCN80 was demonstrated by a lack of evident deactivation after three consecutive reaction periods. The direct condensation of the KIT-6 and melamine mixture does not require pre-casting of the precursor into the pore system of the templates. Owing to its high product yield, improved S{sub BET}, reduced bandgap energy and limited charge recombination, the facile-prepared ordered mesoporous g-C{sub 3}N{sub 4} is a practical candidate for further modification.

New generation of efficient high resolution detector for 30-100 keV photons

DEFF Research Database (Denmark)

Olsen, Ulrik Lund

between pores. The potential of the structured scintillator is explored through Monte Carlo simulations. A spatial resolution of 1 µm is obtainable and for scintillators with a resolution between 1 µm and 8 µm the efficiency could be more than 15 times higher than a regular scintillator with corresponding...... detector. This establishes an inverse correlation between the spatial resolution and the detection efficiency which limits the performance of existing x-ray detectors. The purpose of this Ph.D. project is to explore alternative paths of research, to develop x-ray detectors for the 30-100 keV energy range...... with single micrometre resolution without compromising efficiency. A number of detector types have been evaluated for this purpose. Structured scintillators are found to exhibit a high potential in terms of performance and also in terms of realizing an actual detector. The structured scintillator consists...

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

International Nuclear Information System (INIS)

Wang Liang-Yong; Liu Bo; Song Zhi-Tang; Liu Wei-Li; Feng Song-Lin; David Huang; Babu, S.V

2011-01-01

We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed. (interdisciplinary physics and related areas of science and technology)

Electrochemical Solution Growth of Magnetic Nitrides

Energy Technology Data Exchange (ETDEWEB)

Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-10-01

Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

The influence of plasma nitriding on the fatigue behavior of austenitic stainless steel types AISI 316 and AISI 304

International Nuclear Information System (INIS)

Varavallo, Rogerio; Manfrinato, Marcos Dorigao; Rossino, Luciana Sgarbi; Spinelli, Dirceu; Riofano, Rosamel Melita Munoz

2010-01-01

The plasma nitriding process has been used as an efficient method to optimize the surface properties of steel and alloy in order to increase their wear, fatigue and corrosion resistance. This paper reports on a study of the composition and influence of the nitrided layer on the high-cycle fatigue properties of the AISI 316 and 304 type austenitic stainless steels. Test specimens of AISI 316 and 304 steel were nitrided at 400 deg C for 6 hours under a pressure of 4.5 mbar, using a gas mixture of 80% volume of H 2 and 20% volume of N 2 . The rotary fatigue limit of both nitrided and non-nitrided steels was determined, and the effect of the treatment on the fatigue limit of the two steels was evaluated. The mechanical properties of the materials were evaluated based on tensile tests, and the nitrided layer was characterized by microhardness tests, scanning electron microscopy and X-ray diffraction. The resulting nitride layer showed high hardness and mechanical strength, increasing the fatigue limit of the nitrided material in comparison with the non-nitrided one. The fatigue limit of the 316 steel increased from 400 MPa to 510 MPa in response to nitriding, while that of the 304 steel increased from 380 MPa to 560 MPa. One of the contributing factors of this increase was the introduction of residual compressive stresses during the surface hardening process, which reduce the onset of crack formation underneath the nitride layer. (author)

Solution and precipitation of excess phases and nitrogen partition between solid solution and nitrides in corrosion-resistant steel

International Nuclear Information System (INIS)

Kaputkina, L.M.; Svyazhin, A.G.; Prokoshkina, V.G.

2006-01-01

Experimental study results on dissolution and precipitation of nitrides during crystallization and heat treatment of high nitrogen austenitic steels are presented. It is established that even on rapid crystallization most of nitrogen is in nitrides, and for their dissolution high temperatures and long-term holding at heat are needed. A nitrogen content in the steel should be optimized according to the structure required (austenite or austenite + excess phases). It is noted that a high nitrogen concentration in the steel is not necessarily efficient to attain a high strength [ru

Microstructure and corrosion resistance of nitrogen-rich surface layers on AISI 304 stainless steel by rapid nitriding in a hollow cathode discharge

Science.gov (United States)

Li, Yang; He, Yongyong; Zhang, Shangzhou; Wang, Wei; Zhu, Yijie

2018-01-01

Nitriding treatments have been successfully applied to austenitic stainless steels to improve their hardness and tribological properties. However, at temperatures above 450 °C, conventional plasma nitriding processes decrease the corrosion resistance due to the formation of CrN phases within the modified layer. In this work, AISI 304 austenitic stainless steels were efficiently treated by rapid plasma nitriding at a high temperature of 530 °C in a hollow cathode discharge. The enhanced ionization obtained in the hollow cathode configuration provided a high current density and, consequently, a high temperature could be attained in a short time. The nitrided layers were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results indicated that the dual-layer structure of the nitrided layer consists of a high-N face-centered cubic structure with a free CrN precipitate outer (top) layer and a nitrogen-expanded austenite S-phase bottom layer. The rapid nitriding-assisted hollow cathode discharge technique permits the use of high temperatures, as high as 530 °C, without promoting degradation in the corrosion resistance of stainless steel.

Some Temperature Effects on AISI-304 Nitriding in an Inductively Coupled RF Plasma

International Nuclear Information System (INIS)

Valencia-Alvarado, R.; Barocio, S. R.; Mercado-Cabrera, A.; Pena-Eguiluz, R.; Munoz-Castro, A. E.; Piedad-Beneitez, A. de la; Rosa-Vazquez, J. de la; Lopez-Callejas, R.; Godoy-Cabrera, O. G.

2006-01-01

Some recent results obtained from nitriding AISI 304 stainless steel samples, 1.2 cm in diameter and 0.5 cm thick are reported here in the case of an 85% hydrogen and 15% nitrogen mixture work gas. The process was carried out from 300 to 400 W for (13.56 MHz) inductively coupled plasma within a 60 cm long pyrex glass tube 3.5 cm in diameter where the samples were biased up to -300 V with respect to earth. The resulting hardness appears to be a function of the substrate temperature which varied from 200 deg. C at a 0 V bias to 550 deg. C at -300 V. The plasma density at 400 W reached 3x1010 cm-3 with a 4 eV electron temperature. Prior to nitriding, all the samples were polished with 0.05 μm diamond paste, leading to a 30 nm average roughness (Ra). After nitriding at -300 V, the Ra rose until ∼400 nm while hardness values of 1500 HV under 300 g loads were measured. X ray diffraction indicates that the extended phase amplitude (γN), Fe and Cr nitride depends on the substrate temperature

Thermal oxidation of III-V compounds

International Nuclear Information System (INIS)

Monteiro, O.R.; Evans, J.W.

1988-01-01

The thermal oxidation of two important III-V compound semiconductor materials, namely GaAs and InP, has been studied between 300 and 600 0 C. In-situ TEM, cross-sectional TEM (XTEM) and SIMS analyses were used to characterize the reaction products. The first technique allows us to access the reactions at the very moment they are occurring. XTEM provides a clearer picture of the distribution of phases in the oxidized samples. SIMS gives us information on the dopant redistribution after oxidation as well as enrichment of group V element at the oxide semiconductor interface. Based on those results, the reaction products were characterized and reaction mechanisms proposed

Carbon Nitride Materials as Efficient Catalyst Supports for Proton Exchange Membrane Water Electrolyzers

Directory of Open Access Journals (Sweden)

Ana Belen Jorge

2018-06-01

Full Text Available Carbon nitride materials with graphitic to polymeric structures (gCNH were investigated as catalyst supports for the proton exchange membrane (PEM water electrolyzers using IrO2 nanoparticles as oxygen evolution electrocatalyst. Here, the performance of IrO2 nanoparticles formed and deposited in situ onto carbon nitride support for PEM water electrolysis was explored based on previous preliminary studies conducted in related systems. The results revealed that this preparation route catalyzed the decomposition of the carbon nitride to form a material with much lower N content. This resulted in a significant enhancement of the performance of the gCNH-IrO2 (or N-doped C-IrO2 electrocatalyst that was likely attributed to higher electrical conductivity of the N-doped carbon support.

Compounds of type Ba/sub 2/Bsup(III)Ossup(V)O/sub 6/

Energy Technology Data Exchange (ETDEWEB)

Treiber, U; Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Lehrstuhl fuer Anorganische Chemie 2

1981-07-01

The black perovskites of type Ba/sub 2/Bsup(III)Ossup(V)O/sub 6/ crystallize cubic (Bsup(III) = Pr, Nd, Sm-Lu, Y) and rhombohedral (Bsup(III) = La) respectively; the cell volumina decrease linearily with (rsub(B)sup(III))/sup 3/. Intensity calculations on powder data for Ba/sub 2/YOsO/sub 6/ (space group Fm3m-Osub(h)/sup 5/) and Ba/sub 2/LaOsO/sub 6/ (space group R-3m-Dsub(3d)/sup 5/) gave the intensity related R'values of 4.6% and 5.0% respectively. The results of the vibrational spectroscopic investigations are reported in common with the bond orders, M-O distances and mean amplitudes and compared with the corresponding values of the series Ba/sub 2/Bsup(III)Irsup(V)O/sub 6/ and Ba/sub 2/Bsup(III)Rusup(V)O/sub 6/.

A Combination of Boron Nitride Nanotubes and Cellulose Nanofibers for the Preparation of a Nanocomposite with High Thermal Conductivity.

Science.gov (United States)

Zeng, Xiaoliang; Sun, Jiajia; Yao, Yimin; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

2017-05-23

With the current development of modern electronics toward miniaturization, high-degree integration and multifunctionalization, considerable heat is accumulated, which results in the thermal failure or even explosion of modern electronics. The thermal conductivity of materials has thus attracted much attention in modern electronics. Although polymer composites with enhanced thermal conductivity are expected to address this issue, achieving higher thermal conductivity (above 10 W m -1 K -1 ) at filler loadings below 50.0 wt % remains challenging. Here, we report a nanocomposite consisting of boron nitride nanotubes and cellulose nanofibers that exhibits high thermal conductivity (21.39 W m -1 K -1 ) at 25.0 wt % boron nitride nanotubes. Such high thermal conductivity is attributed to the high intrinsic thermal conductivity of boron nitride nanotubes and cellulose nanofibers, the one-dimensional structure of boron nitride nanotubes, and the reduced interfacial thermal resistance due to the strong interaction between the boron nitride nanotubes and cellulose nanofibers. Using the as-prepared nanocomposite as a flexible printed circuit board, we demonstrate its potential usefulness in electronic device-cooling applications. This thermally conductive nanocomposite has promising applications in thermal interface materials, printed circuit boards or organic substrates in electronics and could supplement conventional polymer-based materials.

Synthesis of Uranium nitride powders using metal uranium powders

International Nuclear Information System (INIS)

Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik

2012-01-01

Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N 15 gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work

Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

OpenAIRE

Xu, Rui; He, Daowei; Zhang, Yuhan; Wu, Bing; Liu, Fengyuan; Meng, Lan; Liu, Jun-Fang; Wu, Qisheng; Shi, Yi; Wang, Jinlan; Nie, Jia-Cai; Wang, Xinran; He, Lin

2014-01-01

Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and grap...

Charge Modulation in Graphitic Carbon Nitride as a Switchable Approach to High-Capacity Hydrogen Storage.

Science.gov (United States)

Tan, Xin; Kou, Liangzhi; Tahini, Hassan A; Smith, Sean C

2015-11-01

Electrical charging of graphitic carbon nitride nanosheets (g-C4 N3 and g-C3 N4 ) is proposed as a strategy for high-capacity and electrocatalytically switchable hydrogen storage. Using first-principle calculations, we found that the adsorption energy of H2 molecules on graphitic carbon nitride nanosheets is dramatically enhanced by injecting extra electrons into the adsorbent. At full hydrogen coverage, the negatively charged graphitic carbon nitride achieves storage capacities up to 6-7 wt %. In contrast to other hydrogen storage approaches, the storage/release occurs spontaneously once extra electrons are introduced or removed, and these processes can be simply controlled by switching on/off the charging voltage. Therefore, this approach promises both facile reversibility and tunable kinetics without the need of specific catalysts. Importantly, g-C4 N3 has good electrical conductivity and high electron mobility, which can be a very good candidate for electron injection/release. These predictions may prove to be instrumental in searching for a new class of high-capacity hydrogen storage materials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

RF plasma nitriding of severely deformed iron-based alloys

International Nuclear Information System (INIS)

Ferkel, H.; Glatzer, M.; Estrin, Y.; Valiev, R.Z.; Blawert, C.; Mordike, B.L.

2003-01-01

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10 -5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of ε and γ' nitrides in the compound layer, with a preferential formation of γ' at the expense of the α-phase at the higher nitriding temperature. The corresponding surface hardness was up to 950 HV0.01. While the HPT-processed St2K50 exhibits both nitride phases after nitriding at 350 deg. C, only the γ'-phase was observed after nitriding at 400 deg. C. A surface hardness of up to 1050 HV0.01 was measured for this steel. The high alloyed steel X5CrNi1810 exhibited the highest increase in surface hardness when HPT was combined with nitriding at 350 deg. C. The surface hardness of this steel was greater than 1400 HV0.025. The XRD analyses indicate the formation of the expanded austenite (S-phase) in the surface layer as a result of RF plasma nitriding. Furthermore, after HPT X5CrNi1810 was transformed completely into deformation martensite which did not transform back to austenite under thermochemical treatment. However, in the case of nitriding of the HPT-processed high alloyed steel at 400 deg. C, the formation of the S-phase was less pronounced. In view of the observed XRD peak broadening, the formation of nitrides, such as e.g. CrN, cannot be ruled out

Cobalt phosphate-modified barium-doped tantalum nitride nanorod photoanode with 1.5% solar energy conversion efficiency

KAUST Repository

Li, Yanbo

2013-10-03

Spurred by the decreased availability of fossil fuels and global warming, the idea of converting solar energy into clean fuels has been widely recognized. Hydrogen produced by photoelectrochemical water splitting using sunlight could provide a carbon dioxide lean fuel as an alternative to fossil fuels. A major challenge in photoelectrochemical water splitting is to develop an efficient photoanode that can stably oxidize water into oxygen. Here we report an efficient and stable photoanode that couples an active barium-doped tantalum nitride nanostructure with a stable cobalt phosphate co-catalyst. The effect of barium doping on the photoelectrochemical activity of the photoanode is investigated. The photoanode yields a maximum solar energy conversion efficiency of 1.5%, which is more than three times higher than that of state-of-the-art single-photon photoanodes. Further, stoichiometric oxygen and hydrogen are stably produced on the photoanode and the counter electrode with Faraday efficiency of almost unity for 100 min. © 2013 Macmillan Publishers Limited. All rights reserved.

Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

2015-08-31

We report the growth and characterization of III-nitride ternary thin films (Al{sub x}Ga{sub 1−x}N, In{sub x}Al{sub 1−x}N and In{sub x}Ga{sub 1−x}N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures.

Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

International Nuclear Information System (INIS)

Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

2015-01-01

We report the growth and characterization of III-nitride ternary thin films (Al x Ga 1−x N, In x Al 1−x N and In x Ga 1−x N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures

MoS{sub 2}-coated microspheres of self-sensitized carbon nitride for efficient photocatalytic hydrogen generation under visible light irradiation

Energy Technology Data Exchange (ETDEWEB)

Gu, Quan [Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an, 710062 (China); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Sun, Huaming; Xie, Zunyuan; Gao, Ziwei [Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an, 710062 (China); Xue, Can, E-mail: cxue@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2017-02-28

Highlights: • Successful coating of MoS{sub 2} onto self-sensitized carbon nitride microspheres. • The carbon nitride@MoS{sub 2} core-shell structure show enhanced H{sub 2} generation in visible light. • Synergistic effect of surface dyes and MoS{sub 2} coating enhances photocatalytic activities. - Abstract: We have successfully coated the self-sensitized carbon nitride (SSCN) microspheres with a layer of MoS{sub 2} through a facile one-pot hydrothermal method by using (NH{sub 4}){sub 2}MoS{sub 4} as the precursor. The resulted MoS{sub 2}-coated SSCN photocatalyst appears as a core-shell structure and exhibits enhanced visible-light activities for photocatalytic H{sub 2} generation as compared to the un-coated SSCN and the standard g-C{sub 3}N{sub 4} reference with MoS{sub 2} coating. The photocatalytic test results suggest that the oligomeric s-triazine dyes on the SSCN surface can provide additional light-harvesting capability and photogenerated charge carriers, and the coated MoS{sub 2} layer can serve as active sites for proton reduction towards H{sub 2} evolution. This synergistic effect of surface triazine dyes and MoS{sub 2} coating greatly promotes the activity of carbon nitride microspheres for vishible-light-driven H{sub 2} generation. This work provides a new way of future development of low-cost noble-metal-free photocatalysts for efficient solar-driven hydrogen production.

Interpreting Interfacial Structure in Cross-Sectional STM Images of III-V Semiconductor Heterostructures

National Research Council Canada - National Science Library

Nosho, B. Z; Barvosa-Carter, W; Yang, M. J; Bennett, B. R; Whitman, L. J

2000-01-01

...) can be used for the study of III-V heterostructure interfaces. The interpretation of interfacial structure in XSTM images is impeded by the fact that only every other III or V plane as grown on the (001...

Nitrides and carbides of molybdenum and tungsten with high specific-surface area: their synthesis, structure, and catalytic properties

International Nuclear Information System (INIS)

Volpe, L.

1985-01-01

Temperature-programmed reactions between trioxides of molybdenum or tungsten and ammonia provide a new method to synthesize dimolybdenum and ditungsten nitrides with specific surface areas to two-hundred-and-twenty and ninety-one square meters per gram, respectively. These are the highest values on record for any unsupported metallic powders. They correspond to three-four nonometer particles. The reaction of molybdenum trioxide with ammonia is topotactic in the sense that one-zero-zero planes of dimolybdenum nitride are parallel to zero-one-zero planes of molybdenum trioxide. As the trioxide transforms, it passes through an oxynitride intermediate with changing bulk structure and increasing surface area and extent of reduction. The nitride product consists of platelets, pseudomorphous with the original trioxide, which can be regarded as highly porous defect single crystals. By treating small particles of dimolybdenum or ditungsten nitride with methane-dihydrogen mixtures it is possible to replace interstitial nitrogen atoms by carbon atoms, without sintering, and thus to prepare carbides of molybdenum and tungsten with very high specific surface areas. Molybdenum nitride powders catalyze ammonia synthesis. A pronounced increase in the catalytic activity with increasing particle size confirms the structure-sensitive character of this reaction

Space-confined preparation of high surface area tungsten oxide and tungsten nitride inside the pores of mesoporous silica SBA-15

DEFF Research Database (Denmark)

Meyer, Simon; Beyer, Hans; Köhler, Klaus

2015-01-01

For the direct preparation of high surface area nitride materials, a lack of suitable precursors exists. Indirect preparation by gas phase nitridation (e.g. by ammonia) requires high temperatures and often results in sintering. The present work demonstrates that the space-confined preparation of ...

David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

Science.gov (United States)

Riel, Heike

Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

Preservation of water samples for arsenic(III/V) determinations: An evaluation of the literature and new analytical results

Science.gov (United States)