Photon Factory activity report, 1987

International Nuclear Information System (INIS)

1987-01-01

The Photon Factory made great strides in 1987. The low emittance operation of the PF ring was achieved in March, and resulted favorably in the increase of brilliance from 2 to 20 times for all the beam lines with high beam stability. At the same time, the installation of inserted devices was under way for all available straight sections of the ring. A 54-pole wiggler-undulator has been commissioned at BL-16. The devices to be inserted in the near future are a multipole wiggler for BL-13, an undulator for BL-19, and an undulator for circular polarized radiation at BL-28. The construction of beam lines continued, and four new beam lines, BL-6, BL-9, BL-16 and BL-17, are now in operation, BL-13 and BL-19 are under construction, and BL-3, BL-5, BL-18, BL-20 and BL-28 are in the design stage. Since its inauguration with four beam lines in 1982, the Photon Factory has grown rapidly, and approaches the goal of operating the PF ring with positrons in full use of its 24 beam ports and the straight sections for inserted devices. The total operation time was limited to 3,000 hours by the budget for fiscal year 1987, and about 80 % of the operation hours were devoted to the experiments of users. The nearly perfect operation of the 400 m long linac has continued in 1987, and has supplied both electrons and positrons to the TRISTAN collision experiment. The light source of a 2.5 GeV electron storage ring was normally operated. (Kako, I.)

Toward biomaterial-based implantable photonic devices

Directory of Open Access Journals (Sweden)

Humar Matjaž

2017-03-01

Full Text Available Optical technologies are essential for the rapid and efficient delivery of health care to patients. Efforts have begun to implement these technologies in miniature devices that are implantable in patients for continuous or chronic uses. In this review, we discuss guidelines for biomaterials suitable for use in vivo. Basic optical functions such as focusing, reflection, and diffraction have been realized with biopolymers. Biocompatible optical fibers can deliver sensing or therapeutic-inducing light into tissues and enable optical communications with implanted photonic devices. Wirelessly powered, light-emitting diodes (LEDs and miniature lasers made of biocompatible materials may offer new approaches in optical sensing and therapy. Advances in biotechnologies, such as optogenetics, enable more sophisticated photonic devices with a high level of integration with neurological or physiological circuits. With further innovations and translational development, implantable photonic devices offer a pathway to improve health monitoring, diagnostics, and light-activated therapies.

Planning study for advanced national synchrotron-radiation facilities

International Nuclear Information System (INIS)

1984-01-01

A new generation of synchrotron-radiation sources based on insertion devices offers gains in photon-beam brilliance as large as the gains that present-day synchrotron sources provided over conventional sources. This revolution in synchrotron capability and its impact on science and technology will be as significant as the original introduction of synchrotron radiation. This report recommends that insertion-device technology be pursued as our highest priority, both through the full development of insertion-device potential on existing machines and through the building of new facilities

ALS insertion devices

International Nuclear Information System (INIS)

Hoyer, E.; Chin, J.; Halbach, K.; Hassenzahl, W.V.; Humphries, D.; Kincaid, B.; Lancaster, H.; Plate, D.

1990-11-01

The Advanced Light Source (ALS), the first US third generation synchrotron radiation source, is currently under construction at the Lawrence Berkeley Laboratory. The low-emittance, 1.5 GeV electron storage ring and the insertion devices are specifically designed to produce high brightness beams in the UV to soft X-Ray range. The planned initial complement of insertion devices includes four 4.6 m long undulators, with period lengths of 3.9 cm, 5.0 cm (2) and 8.0 cm, and a 2.9 m long wiggler of 16 cm period length. Undulator design is well advanced and fabrication has begun on the 5.0 cm and 8.0 cm period length undulators. This paper discusses ALS insertion device requirements; general design philosophy; and design of the magnetic structure, support structure/drive systems, control system and vacuum system. 18 refs., 9 figs., 5 tabs

Science research with high-brilliance synchrotron light source

International Nuclear Information System (INIS)

Sanyal, Milan K.

2013-01-01

Synchrotron-science has changed dramatically since the development of high brilliance electron accelerator-based light sources in 1990s. In the last twenty years or so, several such facilities have come up, particularly in developed countries, as material characterizations in relevant atmosphere and protein crystallography with tiny-crystals have strong implications in industrial competitiveness. Moreover several new techniques have been developed recently over the entire spectral range of emitted light, from infra-red to high energy X-rays, which have altered our basic understanding of various materials like biomaterials, nanomaterials, soft-matter and semiconductor quantum structures. In addition, rapid development of various X-ray imaging techniques for nondestructive evaluation of compositional/structural homogeneity of engineering materials with nanometer resolution will have tremendous impact in manufacturing industries. As India becomes a developed country, it must have access to such an advanced synchrotron facility in the country that enables knowledge generation in the ever-expanding fields of design-characterization-production of advanced materials and modern medicines. Development of such state-of-the art facility will also enable us to carry out frontier-basic-research in our own country and help us to retain and bring back Indian talents to India. Here we shall discuss briefly the characteristics of a high brilliance synchrotron source and outline the nature of basic and applied science research that can be done with such a state-of-the-art facility. (author)

Positron annihilation spectroscopy using high-energy photons

International Nuclear Information System (INIS)

Butterling, Maik; Jungmann, Marco; Krause-Rehberg, Reinhard; Krille, Arnold; Anwand, Wolfgang; Brauer, Gerhard; Cowan, Thomas E.; Hartmann, Andreas; Kosev, Krasimir; Schwengner, Ronald; Wagner, Andreas

2010-01-01

The superconducting electron accelerator ELBE (Electron Linac with high Brilliance and low Emittance) at the Research Centre Dresden-Rossendorf (Germany) serves as a high-intensity bremsstrahlung photon-source delivering a pulsed beam (26 MHz) with very short bunches (<5 ps). The photons are being converted into positrons by means of pair production inside the target material thus forming an intense positron source. The accelerator machine pulse is used as time reference allowing positron lifetime spectroscopy. We performed positron annihilation spectroscopy by pair production in different sample materials and used coincidence techniques to reduce the background due to scattered photons significantly in order resulting in spectra of extraordinary high quality. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Electron acceleration and generation of high-brilliance x-ray radiation in kilojoule, subpicosecond laser-plasma interactions

Directory of Open Access Journals (Sweden)

J. Ferri

2016-10-01

Full Text Available Petawatt, picosecond laser pulses offer rich opportunities in generating synchrotron x-rays. This paper concentrates on the regimes accessible with the PETAL laser, which is a part of the Laser Megajoule (LMJ facility. We explore two physically distinct scenarios through Particle-in-Cell simulations. The first one realizes in a dense plasma, such that the period of electron Langmuir oscillations is much shorter than the pulse duration. Hallmarks of this regime are longitudinal breakup (“self-modulation” of the picosecond-scale laser pulse and excitation of a rapidly evolving broken plasma wake. It is found that electron beams with a charge of several tens of nC can be obtained, with a quasi-Maxwellian energy distribution extending to a few-GeV level. In the second scenario, at lower plasma densities, the pulse is shorter than the electron plasma period. The pulse blows out plasma electrons, creating a single accelerating cavity, while injection on the density downramp creates a nC quasi-monoenergetic electron bunch within the cavity. This bunch accelerates without degradation beyond 1 GeV. The x-ray sources in the self-modulated regime offer a high number of photons (∼10^{12} with the slowly decaying energy spectra extending beyond 60 keV. In turn, quasimonoenergetic character of the electron beam in the blowout regime results in the synchrotron-like spectra with the critical energy around 10 MeV and a number of photons >10^{9}. Yet, much smaller source duration and transverse size increase the x-ray brilliance by more than an order of magnitude against the self-modulated case, also favoring high spatial and temporal resolution in x-ray imaging. In all explored cases, accelerated electrons emit synchrotron x-rays of high brilliance, B>10^{20}  photons/s/mm^{2}/mrad^{2}/0.1%BW. Synchrotron sources driven by picosecond kilojoule lasers may thus find an application in x-ray diagnostics on such facilities such as the LMJ or National

X-ray optics developments at the APS for third-generation synchrotron radiation sources

International Nuclear Information System (INIS)

Mills, D.M.

1996-09-01

High brilliance third-generation synchrotron radiation sources simultaneously provide both a need and an opportunity for the development of new x-ray optical components. The high power and power densities of the x-ray beams produced by insertion devices have forced researchers to consider novel, and what may seem like exotic, approaches to the mitigation of thermal distortions that can dilute the beam brilliance delivered to the experiment or next optical component. Once the power has been filtered by such high heat load optical elements, specialized components can be employed that take advantage of the high degree of brilliance. This presentation reviews the performance of optical components that have been designed, fabricated, and tested at the Advanced Photon Source, starting with high heat load components and followed by examples of several specialized devices such as a milli-eV resolution (in-line) monochromator, a high energy x-ray phase retarder, and a phase zone plate with submicron focusing capability

Preliminary thermo-mechanical analysis of the second phase photon shutters for insertion device beamline front ends at the Advanced Photon Source

International Nuclear Information System (INIS)

Nian, H.L.T.; Sheng, I.C.A.; Kuzay, T.M.

1993-01-01

The photon shutters (PS) on the insertion device front end of the beamlines at the Advanced Photon Source (APS) are designed to fully intercept powerful 7-GeV undulator radiation. Traditional materials (oxygen-free copper and Glidcop) are used in their construction. Initially, the APS proposes to operate the storage ring at 100 mA. In later phases of operation, the APS will operate the storage ring at 300 mA. The heat flux from the undulators is enormous. For example, in the later phase of the project, the first photon shutter (PS1) placed at a distance of 17 m from the Undulator A source will be subjected to 1400 W/mm 2 at normal incidence with a total power of 11.4 kW. The PS uses an enhanced heat transfer mechanism developed at Argonne National Laboratory, which increases the convective heat transfer coefficient to about 3 W/cm 2 · degrees C with single phase water as the coolant. To be able to handle the expected three-fold increase in the intense heat flux, some low-Z materials (such as beryllium or graphite), which can absorb the x-rays through their thickness, are now considered as the facing material on the absorber base plate of the PS. Our analysis of PSI indicates that the face plate made of either graphite or beryllium retains its integrity in most of the cases. The maximum effective stress of the absorber plate (made of annealed OFHC) exceeds the yield strength (50 MPa) except in the case of an absorber with a 10-mm graphite face plate

Surface wave photonic device based on porous silicon multilayers

International Nuclear Information System (INIS)

Guillermain, E.; Lysenko, V.; Benyattou, T.

2006-01-01

Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

Fixed mask assembly research for APS insertion devices

International Nuclear Information System (INIS)

Kuzay, T.M.

1992-01-01

The Fixed Mask Assembly (FMA) is the first component to interact with the photon beam. Two sets of a pair of FMA channels, vertically and horizontally disposed, contain the beam rather than define it. They are subject to very large heat fluxes during containment. In current practice, the FMA channels are made of heavy, seamless copper, have rectangular cross-sections, and are cooled internally with water. Channels are set at grazing angles ranging from I to 6 degrees with respect to the beam, depending on the type of insertion device. APS insertion devices will impose higher heat fluxes on FMAS. Therefore, a need exists to improve the FMA engineering, keeping in mind the current design criteria and philosophy of FMAS. Preliminary analysis of current heat transfer practice indicates that the major resistance to heat transfer is on the coolant side. Therefore, FMA cooling would benefit from enhanced heat transfer on the coolant side. With this principle in mind, an experimental program has been undertaken to explore the feasibility of using high-performance copper tube configurations which are expected to yield heat transfer coefficients, open-quotes hclose quotes, in single phase flow systems 2 to 5(?) times higher than equivalent plain tubes. In this report, the experimental scope and a preliminary analysis of high-performance copper tube configurations are described

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin

2016-09-06

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

Development of a Hard X-ray Beam Position Monitor for Insertion Device Beams at the APS

Science.gov (United States)

Decker, Glenn; Rosenbaum, Gerd; Singh, Om

2006-11-01

Long-term pointing stability requirements at the Advanced Photon Source (APS) are very stringent, at the level of 500 nanoradians peak-to-peak or better over a one-week time frame. Conventional rf beam position monitors (BPMs) close to the insertion device source points are incapable of assuring this level of stability, owing to mechanical, thermal, and electronic stability limitations. Insertion device gap-dependent systematic errors associated with the present ultraviolet photon beam position monitors similarly limit their ability to control long-term pointing stability. We report on the development of a new BPM design sensitive only to hard x-rays. Early experimental results will be presented.

Integrated Ultrasonic-Photonic Devices

DEFF Research Database (Denmark)

Barretto, Elaine Cristina Saraiva

in channel waveguides and Mach-Zehnder interferometers. Numerical models are developed based on the finite element method, and applied to several scenarios, such as optimization of the geometrical parameters of waveguides, use of slow light in photonic crystal waveguides and use of Lamb waves in membranized......This thesis deals with the modeling, design, fabrication and characterization of integrated ultrasonic-photonic devices, with particular focus on the use of standard semiconductor materials such as GaAs and silicon. The devices are based on the use of guided acoustic waves to modulate the light...... investigated. Comparisons are made with the numerical and experimental results, and they validate the obtained response of the acoustic and photonic components of the device. Finally, a new design for an optical frequency shifter is proposed, posing several advantages over existing devices in terms of size...

Silicon photonics fundamentals and devices

CERN Document Server

Deen, M Jamal

2012-01-01

The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

Symplectic models for general insertion devices

International Nuclear Information System (INIS)

Wu, Y.; Forest, E.; Robin, D. S.; Nishimura, H.; Wolski, A.; Litvinenko, V. N.

2001-01-01

A variety of insertion devices (IDs), wigglers and undulators, linearly or elliptically polarized,are widely used as high brightness radiation sources at the modern light source rings. Long and high-field wigglers have also been proposed as the main source of radiation damping at next generation damping rings. As a result, it becomes increasingly important to understand the impact of IDs on the charged particle dynamics in the storage ring. In this paper, we report our recent development of a general explicit symplectic model for IDs with the paraxial ray approximation. High-order explicit symplectic integrators are developed to study real-world insertion devices with a number of wiggler harmonics and arbitrary polarizations

High brilliance multicusp ion source for hydrogen microscopy at SNAKE

Energy Technology Data Exchange (ETDEWEB)

Moser, M., E-mail: marcus.moser@unibw.de [Universitaet der Bundeswehr Muenchen, Institut fuer Angewandte Physik und Messtechnik, LRT2, Department fuer Luft- und Raumfahrttechnik, 85577 Neubiberg (Germany); Reichart, P. [Universitaet der Bundeswehr Muenchen, Institut fuer Angewandte Physik und Messtechnik, LRT2, Department fuer Luft- und Raumfahrttechnik, 85577 Neubiberg (Germany); Carli, W. [Maier-Leibniz-Laboraturium der LMU und TU Muenchen, 85478 Garching (Germany); Greubel, C.; Peeper, K. [Universitaet der Bundeswehr Muenchen, Institut fuer Angewandte Physik und Messtechnik, LRT2, Department fuer Luft- und Raumfahrttechnik, 85577 Neubiberg (Germany); Hartung, P. [Maier-Leibniz-Laboraturium der LMU und TU Muenchen, 85478 Garching (Germany); Dollinger, G. [Universitaet der Bundeswehr Muenchen, Institut fuer Angewandte Physik und Messtechnik, LRT2, Department fuer Luft- und Raumfahrttechnik, 85577 Neubiberg (Germany)

2012-02-15

In order to improve the lateral resolution of the 3D hydrogen microscopy by proton-proton scattering at the Munich microprobe SNAKE, we have installed a new multicusp ion source for negative hydrogen ions manufactured by HVEE at the Munich 14 MV tandem accelerator that boosts the proton beam brilliance with the potential to reduce the beam diameter at the focal plane of SNAKE. We measured a beam brilliance B = 27 A m{sup -2} rad{sup -2} eV{sup -1} directly behind the ion source that is at the space charge limit for conventional ion sources. After preacceleration to in total 180 keV beam energy we measure a slightly reduced beam brilliance of B = 10 {mu}A mm{sup -2} mrad{sup -2} MeV{sup -1}. For injection into the tandem accelerator, the extracted H{sup -}-current of the multicusp source of 1 mA is reduced to about 10 {mu}A because of radiation safety regulations and heating problems at the object slits of SNAKE. Due to beam oscillations and influences of the terminal stripper of the tandem we measured a reduced beam brilliance of 0.8 {mu}A mm{sup -2} mrad{sup -2} MeV{sup -1} in front of SNAKE at 25 MeV but still being nearly 10 times larger than measured with any other ion source.

Beam brilliance investigation of high current ion beams at GSI heavy ion accelerator facility.

Science.gov (United States)

Adonin, A A; Hollinger, R

2014-02-01

In this work the emittance measurements of high current Ta-beam provided by VARIS (Vacuum Arc Ion Source) ion source are presented. Beam brilliance as a function of beam aperture at various extraction conditions is investigated. Influence of electrostatic ion beam compression in post acceleration gap on the beam quality is discussed. Use of different extraction systems (single aperture, 7 holes, and 13 holes) in order to achieve more peaked beam core is considered. The possible ways to increase the beam brilliance are discussed.

Field errors in hybrid insertion devices

International Nuclear Information System (INIS)

Schlueter, R.D.

1995-02-01

Hybrid magnet theory as applied to the error analyses used in the design of Advanced Light Source (ALS) insertion devices is reviewed. Sources of field errors in hybrid insertion devices are discussed

Field errors in hybrid insertion devices

Energy Technology Data Exchange (ETDEWEB)

Schlueter, R.D. [Lawrence Berkeley Lab., CA (United States)

1995-02-01

Hybrid magnet theory as applied to the error analyses used in the design of Advanced Light Source (ALS) insertion devices is reviewed. Sources of field errors in hybrid insertion devices are discussed.

Insertion device calculations with mathematica

Energy Technology Data Exchange (ETDEWEB)

Carr, R. [Stanford Synchrotron Radiation Lab., CA (United States); Lidia, S. [Univ. of California, Davis, CA (United States)

1995-02-01

The design of accelerator insertion devices such as wigglers and undulators has usually been aided by numerical modeling on digital computers, using code in high level languages like Fortran. In the present era, there are higher level programming environments like IDL{reg_sign}, MatLab{reg_sign}, and Mathematica{reg_sign} in which these calculations may be performed by writing much less code, and in which standard mathematical techniques are very easily used. The authors present a suite of standard insertion device modeling routines in Mathematica to illustrate the new techniques. These routines include a simple way to generate magnetic fields using blocks of CSEM materials, trajectory solutions from the Lorentz force equations for given magnetic fields, Bessel function calculations of radiation for wigglers and undulators and general radiation calculations for undulators.

High-performance silicon photonics technology for telecommunications applications.

Science.gov (United States)

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

High-performance silicon photonics technology for telecommunications applications

International Nuclear Information System (INIS)

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Yamamoto, Tsuyoshi; Ishikawa, Yasuhiko; Wada, Kazumi

2014-01-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. (review)

High-performance silicon photonics technology for telecommunications applications

Science.gov (United States)

Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

2014-04-01

By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

An active interlock system for the NSLS x-ray ring insertion devices

International Nuclear Information System (INIS)

Nawrocky, R.J.; Biscardi, R.; Dabrowski, J.; Flannigan, J.; Ramamoorthy, S.; Rothman, J.; Smith, J.; So, I.; Thomas, M.; Decker, G.

1991-01-01

This paper describes the design and operation of an active interlock system which has been installed in the NSLS X-ray electron storage ing to protect the vacuum chamber from thermal damage by mis-steered high power photon beams from insertion devices (IDs). the system employs active beam position detectors to monitor beam motion in the ID straight sections and solid state logic circuitry to ''dump'' the stored beam in the event of a fault condition by interrupting the rf. To ensure a high degree of reliability, redundancy and continuous automatic checking has been incorporated into the design. Overall system integrity is checked periodically with beam at safe levels of beam current. 2 refs., 3 figs

Hardening device, by inserts, of electronic component against radiation

International Nuclear Information System (INIS)

Val, C.

1987-01-01

The hardening device includes at least two materials, one with high atomic number with respect to the other. One of these materials is set as inserts in a layer of the other material. The hardening device is then made by stacking of such layers, the insert density varying from one layer to the other, making thus vary the atomic number resulting from the hardening device along its thickness, following a predefined law [fr

Method for reducing x-ray background signals from insertion device x-ray beam position monitors

Directory of Open Access Journals (Sweden)

Glenn Decker

1999-11-01

Full Text Available A method is described that provides a solution to the long-standing problem of stray radiation-induced signals on photoemission-based x-ray beam position monitors (BPMs located on insertion device x-ray beam lines. The method involves the introduction of a chicane into the accelerator lattice that directs unwanted x radiation away from the photosensitive x-ray BPM blades. This technique has been implemented at the Advanced Photon Source, and experimental confirmation of the technique is provided.

A new gap separation mechanism for APS insertion devices

International Nuclear Information System (INIS)

Trakhtenberg, E. M.; Tcheskidov, V.; Den Hartog, P. K.; Deriy, B.; Erdmann, M.; Makarov, O.; Moog, E. R.

1999-01-01

A new gap separation mechanism for use with the standard Advanced Photon Source (APS) 3.3-cm-period undulator magnetic structures has been designed and built and the first system has been installed in the APS storage ring. The system allows a minimum magnetic gap of 10 mm for use with the APS 8-mm insertion device vacuum chambers. The mechanism is a bolted steel frame structure with a simple 4-motor mechanical drive train. The control system uses servomotors with incremental rotary encoders and virtual absolute linear encoders

Status report on the advanced photon source

International Nuclear Information System (INIS)

Moncton, D.E.

1991-01-01

This article discusses the progress of construction for the Advanced Photon Source (APS) here at Argonne National Laboratory (ANL). Eight years have passed since an ad hoc committee on future opportunities and technical needs for synchrotron-radiation-based research was formed by the Department of Energy's Office of Basic Energy Sciences. That committee, chaired by P. Eisenberger and M. Knotek, proposed that the highest priority be given to construction of a high-energy storage ring designed to provide fundamental undulator radiation in the hard x-ray region of the spectrum. In reaching that conclusion, the committee consulted with members of the US synchrotron-radiation-research community as to their future needs. That example was followed in the planning and design for a facility to meet the requirements set down by the Eisenberger-Knotek committee. Prospective users from industry, universities, and national laboratories have been a sought-after and important source of counsel and inspiration for APS planners. As a result, the facility that is beginning to rise at Argonne is truly a national user facility. The APS will have 68 beamlines for research, with that number divided evenly between insertion device and bending magnet beamlines. X-ray beams emanating from the insertion devices situated in the APS storage ring lattice will achieve unprecedented levels of brilliance. Research and development in support of that goal began well before ground was broken for construction at the APS site. They are now seeing significant gains in the technologies that win make possible forefront research at the APS. Synchrotron radiation sources have traditionally supported research across a broad range of disciplines. The APS will not deviate from that tradition, as evidenced by the proposals to form Collaborative Access Teams (CAT) at the APS

Insertion device and method for accurate and repeatable target insertion

Science.gov (United States)

Gubeli, III, Joseph F.; Shinn, Michelle D.; Bevins, Michael E.; Dillon-Townes, Lawrence; Neil, George R.

2017-07-04

The present invention discloses a device and a method for inserting and positioning a target within a free electron laser, particle accelerator, or other such device that generates or utilizes a beam of energy or particles. The system includes a three-point registration mechanism that insures angular and translational accuracy and repeatability of positioning upon multiple insertions within the same structure.

The APS x-ray undulator photon beam position monitor and tests at CHESS and NSLS

International Nuclear Information System (INIS)

Shu, D.; Rodricks, B.; Barraza, J.; Sanchez, T.; Kuzay, T.M.

1992-01-01

The advent of third generation synchrotron radiation sources, like the Advanced Photon Source (APS), will provide significant increases in brilliance over existing synchrotron sources. The APS x-ray undulators will increase the brilliance in the 3-40 KeV range by several orders of magnitude. Thus, the design of the photon beam position monitor is a challenging engineering task. The beam position monitors must withstand the high thermal load, be able to achieve sub-micron spatial resolution while maintaining their stability, and be compatible with both undulators and wigglers. A preliminary APS prototype photon beam position monitor consisting of a CVD-diamond-based, tungsten-coated blade was tested on the APS/CHESS undulator at the Cornell High Energy Synchrotron Radiation Source (CHESS) and on the NSLS X-13 undulator beamline. Results from these tests, as well as the design of this prototype APS photon beam position monitor, will be discussed in this paper

The APS X-ray undulator photon beam position monitor and tests at CHESS and NSLS

International Nuclear Information System (INIS)

Shu, D.; Rodricks, B.; Barraza, J.; Sanchez, T.; Kuzay, T.M.

1992-01-01

The advent of thirs generation synchrotron sources, like the Advanced Photon Source (APS), will provide significant increases in brilliance over existing synchrotron sources. The APS X-ray undulators will increase the brilliance in the 3-40 keV range by several orders of magnitude. Thus, the design of the photon beam position monitor is a challenging engineering task. The beam position monitors must withstand the high thermal load, be able to achieve submicron spatial resolution while maintaining their stability, and be compatible with both undulators and wigglers. A preliminary APS prototype photon beam position monitor consisting of a CVD-diamond-based, tungsten-coated blade was tested on the APS/CHESS undulator at the Cornell High Energy Synchrotron Radiation Source (CHESS) and on the NSLS X-13 undulator beamline. Results from these tests, as well as the design of this prototype APS photon beam position monitor, will be discussed in this paper. (orig.)

Optimized optical devices for edge-coupling-enabled silicon photonics platform

Science.gov (United States)

Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

2018-02-01

We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

CMOS-compatible photonic devices for single-photon generation

Directory of Open Access Journals (Sweden)

Xiong Chunle

2016-09-01

Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

Plasma Photonic Devices for High Energy Density Science

International Nuclear Information System (INIS)

Kodama, R.

2005-01-01

High power laser technologies are opening a variety of attractive fields of science and technology using high energy density plasmas such as plasma physics, laboratory astrophysics, material science, nuclear science including medical applications and laser fusion. The critical issues in the applications are attributed to the control of intense light and enormous density of charged particles including efficient generation of the particles such as MeV electrons and protons with a current density of TA/cm2. Now these application possibilities are limited only by the laser technology. These applications have been limited in the control of the high power laser technologies and their optics. However, if we have another device consisted of the 4th material, i.e. plasma, we will obtain a higher energy density condition and explore the application possibilities, which could be called high energy plasma device. One of the most attractive devices has been demonstrated in the fast ignition scheme of the laser fusion, which is cone-guiding of ultra-intense laser light in to high density regions1. This is one of the applications of the plasma device to control the ultra-intense laser light. The other role of the devices consisted of transient plasmas is control of enormous energy-density particles in a fashion analogous to light control with a conventional optical device. A plasma fibre (5?m/1mm), as one example of the devices, has guided and deflected the high-density MeV electrons generated by ultra-intense laser light 2. The electrons have been well collimated with either a lens-like plasma device or a fibre-like plasma, resulting in isochoric heating and creation of ultra-high pressures such as Giga bar with an order of 100J. Plasmas would be uniquely a device to easily control the higher energy density particles like a conventional optical device as well as the ultra-intense laser light, which could be called plasma photonic device. (Author)

Liquid Crystal photonic Bandgap Fiber Devices

DEFF Research Database (Denmark)

Wei, Lei

In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure. The prese......In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure...... of each LCPBG fiber. Finally, the applications for LCPBG fiber devices based on the on-chip platform design have been demonstrated in realizing microwave true-time delay and creating an electrically tunable fiber laser. Referatet mailes...

Bremsstrahlung scattering calculations for the beam stops and collimators in the APS insertion-device beamlines

International Nuclear Information System (INIS)

Job, P.K.; Haeffner, D.R.; Shu, D.

1994-12-01

Bremsstrahlung is produced in the APS storage ring by the interaction of positrons with the residual gas molecules in the vacuum chamber of the storage ring. The bremsstrahlung production causes a serious challenge in shielding the insertion-device beamlines because the entire straight section (15 meters) is in the line of sight of the beamline. The radiation emerges in a narrow cone tangential to the beam path with the characteristic emission angle 1/γ, where γ is E/mc 2 which is the ratio of the kinetic energy to the rest mass for the positrons. This high-energy gamma radiation has an approximate 1/E spectrum with the maximum energy extending up to the particle energy (7 GeV for the APS). Bremsstrahlung, being high-energy photons, produces an electromagnetic shower when it encounters the beamline elements. A beamline element not thick enough to fully contain an electromagnetic shower can cause considerable scatter of the high-energy bremsstrahlung radiation. The low-energy component of the bremsstrahlung can also be scattered and create high dose rates in the first-optical and white-beam enclosures. The fully developed electromagnetic shower will have a photon spectrum almost independent of the material. The electromagnetic showers in the high-Z materials can also produce photoneutrons. This note reports the summary of EGS4 calculations performed on bremsstrahlung scattering from different beamline components in a typical APS insertion-device beamline. The related recommendations for shielding are also given. The shielding criterion adopted is a total dose rate of 2.5μSv/h (0.25 mrem/h) at 30 cm from the shield

Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

CERN Document Server

Ohtsu, Motoichi

2016-01-01

This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

Photonic devices prepared by embossing in PDMS

Energy Technology Data Exchange (ETDEWEB)

Jandura, D., E-mail: jandura@fyzika.uniza.sk; Pudis, D.; Berezina, S.

2017-02-15

Highlights: • Fabrication technology of photonic devices based on embossing in PDMS is presented. • Analysis of morphological properties of prepared devices in PDMS by CLSM and AFM. • Spectral characterization of PDMS ring resonator proved the resonator functionality. - Abstract: In this paper, we present useful technique for fabrication of novel photonic devices created in the polydimethylsiloxane (PDMS). We use combination of direct laser writing in thin photoresist layer with embossing process of liquid PDMS. We prepared ring resonator and Mach-Zehnder interferometer in PDMS. The shape of prepared PDMS photonic devices was analyzed by confocal laser microscope and atomic force microscope. Optical characterization of these devices reveals extinction ratios of up to 20 dB.

Modelling band-to-band tunneling current in InP-based heterostructure photonic devices

NARCIS (Netherlands)

van Engelen, J.P.; Shen, L.; van der Tol, J.J.G.M.; Smit, M.K.; Kockaert, P.; Emplit, P.; Gorza, S.-P.; Massar, S.

2015-01-01

Some semiconductor photonic devices show large discontinuities in the band structure. Short tunnel paths caused by this band structure may lead to an excessive tunneling current, especially in highly doped layers. Modelling of this tunnelling current is therefore important when designing photonic

Photonic Crystals Towards Nanoscale Photonic Devices

CERN Document Server

Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexei; Pagnoux, Dominique

2008-01-01

Just like the periodical crystalline potential in solid state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as cages for storing, filtering or guiding light at the wavelength scale paves the way to the realization of optical and optoelectronic devices with ultimate properties and dimensions. This will contribute towards meeting the demands for greater miniaturization imposed by the processing of an ever increasing number of data. Photonic Crystals will provide students and researchers from different fields with the theoretical background required for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, ranging from optics to microwaves, where photonic crystals have found application. As such, it aims at building bridges between...

Photonic Crystals Towards Nanoscale Photonic Devices

CERN Document Server

Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexis

2005-01-01

Just like the periodical crystalline potential in solid-state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as a cage for storing, filtering or guiding light at the wavelength scale thus paves the way to the realisation of optical and optoelectronic devices with ultimate properties and dimensions. This should contribute toward meeting the demands for a greater miniaturisation that the processing of an ever increasing number of data requires. Photonic Crystals intends at providing students and researchers from different fields with the theoretical background needed for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, from optics to microwaves, where photonic crystals have found applications. As such, it aims at building brid...

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin; Lai, Kun-Yu; Lee, Ming-Jui; Liao, Yu-Kuang; Ooi, Boon S.; Kuo, Hao-Chung; He, Jr-Hau

2016-01-01

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via

Review of window and filter requirements for commissioning of the Advanced Photon Source insertion device beamlines

International Nuclear Information System (INIS)

Kuzay, T.M.; Wang, Zhibi.

1994-01-01

The Advanced Photon Source (APS) is building 16 insertion device (ID) front ends for the first phase of the project. Eleven of these are to be equipped with the APS Undulator A and the other five with a Wiggler-A-type source. The Undulator A front ends are designed to operate in a ''windowless'' mode using an APS-designed differential pump. However, during beamline commissioning and early operations of the storage ring, it is prudent to install windows to ensure storage ring vacuum safety before easing into windowless operation. However, the window designed for this interim period may not meet all the needs of a user's scientific program. In the early phases of the project through commissioning and start of operations, such a window will permit the user to prepare for his program, while allowing both the user and the facility operators to gain experience for safe phasing into eventual windowless operations. In this report, we will present analysis and design options for a variety of windows particularly suited to either the APS Undulator A front ends or as user windows located in the first optics enclosure (FOE)

Continuously tunable devices based on electrical control of dual-frequency liquid crystal filled photonic bandgap fibers

DEFF Research Database (Denmark)

Scolari, Lara; Alkeskjold, Thomas Tanggaard; Riishede, Jesper

2005-01-01

We present an electrically controlled photonic bandgap fiber device obtained by infiltrating the air holes of a photonic crystal fiber (PCF) with a dual-frequency liquid crystal (LC) with pre-tilted molecules. Compared to previously demonstrated devices of this kind, the main new feature of this ...... in the same device. We investigate the dynamics of this device and demonstrate a birefringence controller based on this principle....

Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

Science.gov (United States)

Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

2015-02-01

We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

Optimization and applications of planar silicon-based photonic crystal devices

DEFF Research Database (Denmark)

Borel, Peter Ingo; Frandsen, Lars Hagedorn; Burgos Leon, Juan

2005-01-01

such as topology optimization. We have also investigated a new device concept for coarse wavelength division de-multiplexing based on planar photonic crystal waveguides. The filtering of the wavelength channels has been realized by shifting the cut-off frequency of the fundamental photonic band gap mode...... in consecutive sections of the waveguide. Preliminary investigations show that this concepts allows coarse de-multiplexing to take place, but that optimization is required in order to reduce cross talk between adjacent channels and to increase the overall transmission. In this work the design, fabrication...

Photon beam position monitor

Science.gov (United States)

Kuzay, Tuncer M.; Shu, Deming

1995-01-01

A photon beam position monitor for use in the front end of a beamline of a high heat flux and high energy photon source such as a synchrotron radiation storage ring detects and measures the position and, when a pair of such monitors are used in tandem, the slope of a photon beam emanating from an insertion device such as a wiggler or an undulator inserted in the straight sections of the ring. The photon beam position monitor includes a plurality of spaced blades for precisely locating the photon beam, with each blade comprised of chemical vapor deposition (CVD) diamond with an outer metal coating of a photon sensitive metal such as tungsten, molybdenum, etc., which combination emits electrons when a high energy photon beam is incident upon the blade. Two such monitors are contemplated for use in the front end of the beamline, with the two monitors having vertically and horizontally offset detector blades to avoid blade "shadowing". Provision is made for aligning the detector blades with the photon beam and limiting detector blade temperature during operation.

Physics of photonic devices

CERN Document Server

Chuang, Shun Lien

2009-01-01

The most up-to-date book available on the physics of photonic devices This new edition of Physics of Photonic Devices incorporates significant advancements in the field of photonics that have occurred since publication of the first edition (Physics of Optoelectronic Devices). New topics covered include a brief history of the invention of semiconductor lasers, the Lorentz dipole method and metal plasmas, matrix optics, surface plasma waveguides, optical ring resonators, integrated electroabsorption modulator-lasers, and solar cells. It also introduces exciting new fields of research such as:

High-efficiency power transfer for silicon-based photonic devices

Science.gov (United States)

Son, Gyeongho; Yu, Kyoungsik

2018-02-01

We demonstrate an efficient coupling of guided light of 1550 nm from a standard single-mode optical fiber to a silicon waveguide using the finite-difference time-domain method and propose a fabrication method of tapered optical fibers for efficient power transfer to silicon-based photonic integrated circuits. Adiabatically-varying fiber core diameters with a small tapering angle can be obtained using the tube etching method with hydrofluoric acid and standard single-mode fibers covered by plastic jackets. The optical power transmission of the fundamental HE11 and TE-like modes between the fiber tapers and the inversely-tapered silicon waveguides was calculated with the finite-difference time-domain method to be more than 99% at a wavelength of 1550 nm. The proposed method for adiabatic fiber tapering can be applied in quantum optics, silicon-based photonic integrated circuits, and nanophotonics. Furthermore, efficient coupling within the telecommunication C-band is a promising approach for quantum networks in the future.

Commissioning of experimental enclosures (Hutches) at the Advanced Photon Source - A to Z ALARA

International Nuclear Information System (INIS)

Vacca, J.; Job, P. K.; Rauchas, A.; Justus, A.; Veluri, V. R.

2000-01-01

The Advanced Photon Source (APS), 7 GeV electron Storage Ring at the Argonne National Laboratory is designed to be a major national user facility providing high-brilliance x-ray beams. Figure 1 shows a plan view of the APS. At completion, APS will have 35 bending magnet (BM) beamlines and 35 insertion device (ID) beamlines. A typical x-ray beamline at APS comprises of a front end (FE) that confines the beam; a first optics enclosure (FOE) which houses optics to filter and monochromatize the beam; and beam transports, additional optics, and the experiment stations. Figure 2 shows a section of the storage ring with the layout of the ID and BM beamlines and typical experiment stations. The first x-ray beam was delivered to an experiment station in 1995. Ever since, to date, over 120 experimental stations (hutches) have been commissioned and are receiving intense x-ray beams of varying energies for various experiments. This paper describes in some detail the steps involved in the process of commissioning experimental stations and the implementation of the ALARA at each step

A 1.5 GeV high brilliance synchrotron light source with combined function lattice

International Nuclear Information System (INIS)

Eriksson, M.; Lindgren, L.J.; Andersson, Aa.; Roejsel, P.; Werin, S.

1988-01-01

A 1.5 GeV synchrotron light source with a combined function lattice is studied. The light source will offer X-ray radiation with λc=1.0 angstrom from a superconducting wiggler and high brilliance VUV-radiation from undulators. The magnet lattice, magnet design and ring performance is discussed. (authors)

A study of the suitability of ferrite for use in low-field insertion devices

Energy Technology Data Exchange (ETDEWEB)

Johnson, K.; Hassenzahl, W.V.

1995-02-01

Most insertion devices built to date use rare-earth permanent-magnet materials, which have a high remanent field and are more expensive than many other permanent-magnet materials. Low-field insertion devices could use less-expensive, lower performance magnetic materials if they had suitable magnetic characteristics. These materials must be resistant to demagnetization during construction and operation of the insertion device, have uniform magnetization, possess low minor-axis magnetic moments, and have small minor field components on the surfaces. This paper describes an investigation to determine if ferrite possesses magnetic qualities suitable for insertion device applications. The type of ferrite investigated, MMPA Ceramic 8 from Stackpole Inc., was found to be acceptable for insertion device applications.

Active interlock system for high power insertion devices in the x-ray ring

International Nuclear Information System (INIS)

Anon.

1991-01-01

In modern synchrotron radiation rings photon beams generated by high power insertion devices (IDs) may be sufficiently intense to cause severe thermal damage to the machine vacuum chamber if mis-steered. Thus when operating a storage ring with the IDs, great care must be exercised to prevent mis-steering of the electron beam orbit. At present, the X-ray ring operates with three IDs, namely two hybrid wigglers (HBW) at X-21 and X-25,a nd a 5-Tesla superconducting wiggler at X-17. All wigglers are located in low-beta straight sections. In the straight sections. In the straight sections, beam orbit may be deflected by as much as ±8 mrad without scraping the chamber wall. For various reasons it was not possible to design the X-ray ring vacuum chamber to be safe under all possible operating conditions, however, the chamber is safe for i < 7 mA, all horizontal beam deflection angles and for vertical angles < ± 2.5 mrad. To protect the machine vacuum chamber from damage due to mis-steered beams, and interlock system has been developed and installed. This system utilizes active beam position detectors which continuously monitor beam motion in each of the ID straight sections and logic circuitry which interrupts the RF and dumps the stored beam in the case of a fault

Geometrical tuning art for entirely subwavelength grating waveguide based integrated photonics circuits.

Science.gov (United States)

Wang, Zheng; Xu, Xiaochuan; Fan, Donglei; Wang, Yaguo; Subbaraman, Harish; Chen, Ray T

2016-05-05

Subwavelength grating (SWG) waveguide is an intriguing alternative to conventional optical waveguides due to the extra degree of freedom it offers in tuning a few important waveguide properties, such as dispersion and refractive index. Devices based on SWG waveguides have demonstrated impressive performances compared to conventional waveguides. However, the high loss of SWG waveguide bends jeopardizes their applications in integrated photonic circuits. In this work, we propose a geometrical tuning art, which realizes a pre-distorted refractive index profile in SWG waveguide bends. The pre-distorted refractive index profile can effectively reduce the mode mismatch and radiation loss simultaneously, thus significantly reduce the bend loss. This geometry tuning art has been numerically optimized and experimentally demonstrated in present study. Through such tuning, the average insertion loss of a 5 μm SWG waveguide bend is reduced drastically from 5.43 dB to 1.10 dB per 90° bend for quasi-TE polarization. In the future, the proposed scheme will be utilized to enhance performance of a wide range of SWG waveguide based photonics devices.

Compact, low-loss and broadband photonic crystal circulator based on a star-type ferrite rod

Directory of Open Access Journals (Sweden)

Xiang Xi

Full Text Available We propose and investigate a compact, low-loss and broadband circulator based on a star-type ferrite rod in two-dimensional square-lattice photonic crystals. Only one ferrite rod is required to be inserted in our structure. Firstly, the performances of circulator based on the star-type, circle, and square ferrite rod are compared, showing that the circulator with the star-type ferrite rod performs better than the other two ones. And then, based on the star-type ferrite rod circulator, four cases of improvement, in which the background rods around the center ferrite rod are replaced respectively by the backward-triangle, forward-triangle, backward-semicircle, and forward-semicircle rods, are investigated to modulate the coupling between the center magneto-optical micro-cavity and the corresponding waveguides. The results show that, with proper parameters, all the four cases can greatly improve the output properties of the circulator, and different cases have its own advantages. The mechanism behind these improvements is also discussed. Finite-element method is used to calculate the characteristics of the circulator and Nelder-Mead optimization method is employed to obtain the optimized parameters. The ideas presented here are useful for designing broadband, low insertion loss, and high-isolation circulators which have potential application in integrated photonic crystal devices. Keywords: Photonic crystals, Circulator, Magneto-optical material, Photonic crystal waveguides

Micro- and nano-scale optical devices for high density photonic integrated circuits at near-infrared wavelengths

Science.gov (United States)

Chatterjee, Rohit

In this research work, we explore fundamental silicon-based active and passive photonic devices that can be integrated together to form functional photonic integrated circuits. The devices which include power splitters, switches and lenses are studied starting from their physics, their design and fabrication techniques and finally from an experimental standpoint. The experimental results reveal high performance devices that are compatible with standard CMOS fabrication processes and can be easily integrated with other devices for near infrared telecom applications. In Chapter 2, a novel method for optical switching using nanomechanical proximity perturbation technique is described and demonstrated. The method which is experimentally demonstrated employs relatively low powers, small chip footprint and is compatible with standard CMOS fabrication processes. Further, in Chapter 3, this method is applied to develop a hitless bypass switch aimed at solving an important issue in current wavelength division multiplexing systems namely hitless switching of reconfigurable optical add drop multiplexers. Experimental results are presented to demonstrate the application of the nanomechanical proximity perturbation technique to practical situations. In Chapter 4, a fundamental photonic component namely the power splitter is described. Power splitters are important components for any photonic integrated circuits because they help split the power from a single light source to multiple devices on the same chip so that different operations can be performed simultaneously. The power splitters demonstrated in this chapter are based on multimode interference principles resulting in highly compact low loss and highly uniform power splitting to split the power of the light from a single channel to two and four channels. These devices can further be scaled to achieve higher order splitting such as 1x16 and 1x32 power splits. Finally in Chapter 5 we overcome challenges in device

Byzantine Parthenogenesis as Hierotopy of Fluid Brilliance

DEFF Research Database (Denmark)

Isar, Nicoletta

2014-01-01

Images Borne on Dewy Lightning Byzantine παρθένογένεσις as Hierotopy of Fluid Brilliance......Images Borne on Dewy Lightning Byzantine παρθένογένεσις as Hierotopy of Fluid Brilliance...

Proposal of highly sensitive optofluidic sensors based on dispersive photonic crystal waveguides

DEFF Research Database (Denmark)

Xiao, Sanshui; Mortensen, Niels Asger

2007-01-01

Optofluidic sensors based on highly dispersive two-dimensional photonic crystal waveguides are studied theoretically. Results show that these structures are strongly sensitive to the refractive index of the infiltrated liquid (nl), which is used to tune dispersion of the photonic crystal waveguide....... The waveguide mode-gap edge shifts about 1.2 nm for δnl = 0.002. The shifts can be explained well by band structure theory combined with first-order perturbation theory. These devices are potentially interesting for chemical sensing applications....

Finite element modeling of micromachined MEMS photon devices

Science.gov (United States)

Evans, Boyd M., III; Schonberger, D. W.; Datskos, Panos G.

1999-09-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.

Finite Element Modeling of Micromachined MEMS Photon Devices

International Nuclear Information System (INIS)

Datskos, P.G.; Evans, B.M.; Schonberger, D.

1999-01-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness

Bridging ultrahigh-Q devices and photonic circuits

Science.gov (United States)

Yang, Ki Youl; Oh, Dong Yoon; Lee, Seung Hoon; Yang, Qi-Fan; Yi, Xu; Shen, Boqiang; Wang, Heming; Vahala, Kerry

2018-05-01

Optical microresonators are essential to a broad range of technologies and scientific disciplines. However, many of their applications rely on discrete devices to attain challenging combinations of ultra-low-loss performance (ultrahigh Q) and resonator design requirements. This prevents access to scalable fabrication methods for photonic integration and lithographic feature control. Indeed, finding a microfabrication bridge that connects ultrahigh-Q device functions with photonic circuits is a priority of the microcavity field. Here, an integrated resonator having a record Q factor over 200 million is presented. Its ultra-low-loss and flexible cavity design brings performance to integrated systems that has been the exclusive domain of discrete silica and crystalline microcavity devices. Two distinctly different devices are demonstrated: soliton sources with electronic repetition rates and high-coherence/low-threshold Brillouin lasers. This multi-device capability and performance from a single integrated cavity platform represents a critical advance for future photonic circuits and systems.

Brilliance and flux reduction in imperfect inclined crystals

International Nuclear Information System (INIS)

Lee, W.K.; Blasdell, R.C.; Fernandez, P.B.; Macrander, A.T.; Mills, D.M.

1996-01-01

The inclined crystal geometry has been suggested as a method of reducing the surface absorbed power density of high-heat-load monochromators for third-generation synchrotron radiation sources. Computer simulations have shown that if the crystals are perfectly aligned and have no strains then the diffraction properties of a pair of inclined crystals are very similar to a pair of conventional flat crystals with only subtle effects differentiating the two configurations. However, if the crystals are strained, these subtle differences in the behavior of inclined crystals can result in large beam divergences causing brilliance and flux losses. This manuscript elaborates on these issues and estimates potential brilliance and flux losses from strained inclined crystals at the APS

Compact high-efficiency vortex beam emitter based on a silicon photonics micro-ring

DEFF Research Database (Denmark)

Li, Shimao; Ding, Yunhong; Guan, Xiaowei

2018-01-01

Photonic integrated devices that emit vortex beam carrying orbital angular momentum are becoming key components for multiple applications. Here we propose and demonstrate a high-efficiency vortex beam emitter based on a silicon micro-ring resonator integrated with a metal mirror. Such a compact...

ALS insertion device block measurement and inspection

International Nuclear Information System (INIS)

Marks, S.; Carrieri, J.; Cook, C.; Hassenzahl, W.V.; Hoyer, E.; Plate, D.

1991-05-01

The performance specifications for ALS insertion devices require detailed knowledge and strict control of the Nd-Fe-B permanent magnet blocks incorporated in these devices. This paper describes the measurement and inspection apparatus and the procedures designed to qualify and characterize these blocks. A detailed description of a new, automated Helmholtz coil facility for measurement of the three components of magnetic moment is included. Physical block inspection and magnetic moment measurement procedures are described. Together they provide a basis for qualifying blocks and for specifying placement of blocks within an insertion devices' magnetic structures. 1 ref., 4 figs

High Resolution Tracking Devices Based on Capillaries Filled with Liquid Scintillator

CERN Multimedia

Bonekamper, D; Vassiltchenko, V; Wolff, T

2002-01-01

%RD46 %title\\\\ \\\\The aim of the project is to develop high resolution tracking devices based on thin glass capillary arrays filled with liquid scintillator. This technique provides high hit densities and a position resolution better than 20 $\\mu$m. Further, their radiation hardness makes them superior to other types of tracking devices with comparable performance. Therefore, the technique is attractive for inner tracking in collider experiments, microvertex devices, or active targets for short-lived particle detection. High integration levels in the read-out based on the use of multi-pixel photon detectors and the possibility of optical multiplexing allow to reduce considerably the number of output channels, and, thus, the cost for the detector.\\\\ \\\\New optoelectronic devices have been developed and tested: the megapixel Electron Bombarded CCD (EBCCD), a high resolution image-detector having an outstanding capability of single photo-electron detection; the Vacuum Image Pipeline (VIP), a high-speed gateable pi...

Tracking studies of insertion device effects on dynamic aperture in the APS storage ring

International Nuclear Information System (INIS)

Chae, Yong-chul; Crosbie, E.A.

1993-01-01

We studied the effects of an insertion device (ID) on the dynamic aperture in the 7-GeV Advanced Photon Source (APS) storage ring using the program RACETRACK. We found that the nonlinear effect of the ID is the dominant effect on the dynamic aperture reduction compared to the other multipole errors which exist in the otherwise ideal lattice. The previous study of dynamic aperture was based on the assumption that the effect of the fast oscillating terms in L. Smith's Hamiltonian is small, and hence can be neglected in the simulation. The remarkable agreement between the previous study and the current results using RACETRACK, including all effects of the fast oscillating terms, justified those assumptions at least for the APS ring

Calculation of magnetic error fields in hybrid insertion devices

International Nuclear Information System (INIS)

Savoy, R.; Halbach, K.; Hassenzahl, W.; Hoyer, E.; Humphries, D.; Kincaid, B.

1989-08-01

The Advanced Light Source (ALS) at the Lawrence Berkeley Laboratory requires insertion devices with fields sufficiently accurate to take advantage of the small emittance of the ALS electron beam. To maintain the spectral performance of the synchrotron radiation and to limit steering effects on the electron beam these errors must be smaller than 0.25%. This paper develops a procedure for calculating the steering error due to misalignment of the easy axis of the permanent magnet material. The procedure is based on a three dimensional theory of the design of hybrid insertion devices developed by one of us. The acceptable tolerance for easy axis misalignment is found for a 5 cm period undulator proposed for the ALS. 11 refs., 5 figs

Status report on the Advanced Photon Source Project at Argonne National Laboratory

International Nuclear Information System (INIS)

Huebner, R.H. Sr.

1989-01-01

The Advanced Photon Source at Argonne National Laboratory is designed as a national synchrotron radiation user facility which will provide extremely bright, highly energetic x-rays for multidisciplinary research. When operational, the Advanced Photon Source will accelerate positrons to a nominal energy of 7 GeV. The positrons will be manipulated by insertion devices to produce x-rays 10,000 times brighter than any currently available for research. Accelerator components, insertion devices, optical elements, and optical-element cooling schemes have been and continue to be the subjects of intensive research and development. A call for Letters of Intent from prospective users of the Advanced Photon Source has resulted in a substantial response from industrial, university, and national laboratory researchers

A backing device based on an embedded stiffener and retractable insertion tool for thin-film cochlear arrays

Science.gov (United States)

Tewari, Radheshyam

Intracochlear trauma from surgical insertion of bulky electrode arrays and inadequate pitch perception are areas of concern with current hand-assembled commercial cochlear implants. Parylene thin-film arrays with higher electrode densities and lower profiles are a potential solution, but lack rigidity and hence depend on manually fabricated permanently attached polyethylene terephthalate (PET) tubing based bulky backing devices. As a solution, we investigated a new backing device with two sub-systems. The first sub-system is a thin poly(lactic acid) (PLA) stiffener that will be embedded in the parylene array. The second sub-system is an attaching and detaching mechanism, utilizing a poly(N-vinylpyrrolidone)-block-poly(d,l-lactide) (PVP-b-PDLLA) copolymer-based biodegradable and water soluble adhesive, that will help to retract the PET insertion tool after implantation. As a proof-of-concept of sub-system one, a microfabrication process for patterning PLA stiffeners embedded in parylene has been developed. Conventional hot-embossing, mechanical micromachining, and standard cleanroom processes were integrated for patterning fully released and discrete stiffeners coated with parylene. The released embedded stiffeners were thermoformed to demonstrate that imparting perimodiolar shapes to stiffener-embedded arrays will be possible. The developed process when integrated with the array fabrication process will allow fabrication of stiffener-embedded arrays in a single process. As a proof-of-concept of sub-system two, the feasibility of the attaching and detaching mechanism was demonstrated by adhering 1x and 1.5x scale PET tube-based insertion tools and PLA stiffeners embedded in parylene using the copolymer adhesive. The attached devices survived qualitative adhesion tests, thermoforming, and flexing. The viability of the detaching mechanism was tested by aging the assemblies in-vitro in phosphate buffer solution. The average detachment times, 2.6 minutes and 10 minutes

Using Protection Layers for a 2-Photon Water Splitting Device

DEFF Research Database (Denmark)

Seger, Brian; Mei, Bastian Timo; Frydendal, Rasmus

2015-01-01

The 2-photon tandem device for photocatalytic water splitting has been theoretically shown to provide a higher efficiency than a single photon device(1). This increased efficiency can be achieved by having one material optimized to absorb high energy photons (large bandgap) and another material...... optimized to absorb low energy photons (small bandgap). To a large degree this approach has been hindered by corrosion issues. In this talk I will first discuss how our computational screening of 2,400 materials showed that very few materials can efficiently absorb light without corroding in water splitting...

The Materials Science beamline upgrade at the Swiss Light Source

Energy Technology Data Exchange (ETDEWEB)

Willmott, P. R., E-mail: philip.willmott@psi.ch; Meister, D.; Leake, S. J.; Lange, M.; Bergamaschi, A. [Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen (Switzerland); and others

2013-07-16

The wiggler X-ray source of the Materials Science beamline at the Swiss Light Source has been replaced with a 14 mm-period cryogenically cooled in-vacuum undulator. In order to best exploit the increased brilliance of this new source, the entire front-end and optics have been redesigned. The Materials Science beamline at the Swiss Light Source has been operational since 2001. In late 2010, the original wiggler source was replaced with a novel insertion device, which allows unprecedented access to high photon energies from an undulator installed in a medium-energy storage ring. In order to best exploit the increased brilliance of this new source, the entire front-end and optics had to be redesigned. In this work, the upgrade of the beamline is described in detail. The tone is didactic, from which it is hoped the reader can adapt the concepts and ideas to his or her needs.

Si light-emitting device in integrated photonic CMOS ICs

Science.gov (United States)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

Ring resonator-based on-chip modulation transformer for high-performance phase-modulated microwave photonic links.

Science.gov (United States)

Zhuang, Leimeng; Taddei, Caterina; Hoekman, Marcel; Leinse, Arne; Heideman, René; van Dijk, Paulus; Roeloffzen, Chris

2013-11-04

In this paper, we propose and experimentally demonstrate a novel wideband on-chip photonic modulation transformer for phase-modulated microwave photonic links. The proposed device is able to transform phase-modulated optical signals into intensity-modulated versions (or vice versa) with nearly zero conversion of laser phase noise to intensity noise. It is constructed using waveguide-based ring resonators, which features simple architecture, stable operation, and easy reconfigurability. Beyond the stand-alone functionality, the proposed device can also be integrated with other functional building blocks of photonic integrated circuits (PICs) to create on-chip complex microwave photonic signal processors. As an application example, a PIC consisting of two such modulation transformers and a notch filter has been designed and realized in TriPleX(TM) waveguide technology. The realized device uses a 2 × 2 splitting circuit and 3 ring resonators with a free spectral range of 25 GHz, which are all equipped with continuous tuning elements. The device can perform phase-to-intensity modulation transform and carrier suppression simultaneously, which enables high-performance phase-modulated microwave photonics links (PM-MPLs). Associated with the bias-free and low-complexity advantages of the phase modulators, a single-fiber-span PM-MPL with a RF bandwidth of 12 GHz (3 dB-suppression band 6 to 18 GHz) has been demonstrated comprising the proposed PIC, where the achieved spurious-free dynamic range performance is comparable to that of Class-AB MPLs using low-biased Mach-Zehnder modulators.

Performance of a high-resolution x-ray microprobe at the Advanced Photon Source

International Nuclear Information System (INIS)

Cai, Z.; Lai, B.; Yun, W.; McNulty, I.; Khounsary, A.; Maser, J.; Ilinski, P.; Legnini, D.; Trakhtenberg, E.; Xu, S.; Tieman, B.; Wiemerslage, G.; Gluskin, E.

1999-01-01

The authors have developed a x-ray microprobe in the energy region from 6 to 20 keV using undulator radiation and zone-plate optics for microfocusing-based techniques and applications at a beamline at the Advanced Photon Source (APS). The performance of the beamline was shown to meet the design objectives, including preservation of the source brilliance and coherence, selectable transverse coherence length and energy bandwidth, high angular stability, and harmonic suppression of the beam. These objectives were achieved by careful thermal management and use of a novel mirror and crystal monochromator cooling geometry. All beamline optical components are water cooled, and the x-ray beam in the experiment station is stable in beam intensity, energy, and position over many days with no active feedback. Using a double-crystal Si(111) monochromator, they have obtained a focal spot size (FWHM) of 0.15 (micro)m (v) x 1.0 (micro)m (h), and a photon flux of 4 x 10 9 photons/sec at the focal spot, and thus a photon flux density gain of 15,000. A circular beam spot of 0.15 (micro)m in diameter can be achieved by reducing the horizontal source size using a white beam slit located 43.5 meters upstream of the zone plate, with an order of magnitude less flux in the focal spot

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices.

Science.gov (United States)

Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F; Ross, Caroline A

2013-11-08

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO₂ -δ , Co- or Fe-substituted SrTiO 3- δ , as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti 0.2 Ga 0.4 Fe 0.4 )O 3- δ and polycrystalline (CeY₂)Fe₅O 12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY₂)Fe₅O 12 /silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

Ultra-low power, highly uniform polymer memory by inserted multilayer graphene electrode

International Nuclear Information System (INIS)

Jang, Byung Chul; Kim, Jong Yun; Koo, Beom Jun; Yang, Sang Yoon; Choi, Sung-Yool; Seong, Hyejeong; Im, Sung Gap; Kim, Sung Kyu

2015-01-01

Filament type resistive random access memory (RRAM) based on polymer thin films is a promising device for next generation, flexible nonvolatile memory. However, the resistive switching nonuniformity and the high power consumption found in the general filament type RRAM devices present critical issues for practical memory applications. Here, we introduce a novel approach not only to reduce the power consumption but also to improve the resistive switching uniformity in RRAM devices based on poly(1,3,5-trimethyl-3,4,5-trivinyl cyclotrisiloxane) by inserting multilayer graphene (MLG) at the electrode/polymer interface. The resistive switching uniformity was thereby significantly improved, and the power consumption was markedly reduced by 250 times. Furthermore, the inserted MLG film enabled a transition of the resistive switching operation from unipolar resistive switching to bipolar resistive switching and induced self-compliance behavior. The findings of this study can pave the way toward a new area of application for graphene in electronic devices. (paper)

High-order passive photonic temporal integrators.

Science.gov (United States)

Asghari, Mohammad H; Wang, Chao; Yao, Jianping; Azaña, José

2010-04-15

We experimentally demonstrate, for the first time to our knowledge, an ultrafast photonic high-order (second-order) complex-field temporal integrator. The demonstrated device uses a single apodized uniform-period fiber Bragg grating (FBG), and it is based on a general FBG design approach for implementing optimized arbitrary-order photonic passive temporal integrators. Using this same design approach, we also fabricate and test a first-order passive temporal integrator offering an energetic-efficiency improvement of more than 1 order of magnitude as compared with previously reported passive first-order temporal integrators. Accurate and efficient first- and second-order temporal integrations of ultrafast complex-field optical signals (with temporal features as fast as approximately 2.5ps) are successfully demonstrated using the fabricated FBG devices.

Athermal Photonic Devices and Circuits on a Silicon Platform

Science.gov (United States)

Raghunathan, Vivek

In recent years, silicon based optical interconnects has been pursued as an effective solution that can offer cost, energy, distance and bandwidth density improvements over copper. Monolithic integration of optics and electronics has been enabled by silicon photonic devices that can be fabricated using CMOS technology. However, high levels of device integration result in significant local and global temperature fluctuations that prove problematic for silicon based photonic devices. In particular, high temperature dependence of Si refractive index (thermo-optic (TO) coefficient) shifts the filter response of resonant devices that limit wavelength resolution in various applications. Active thermal compensation using heaters and thermo-electric coolers are the legacy solution for low density integration. However, the required electrical power, device foot print and number of input/output (I/O) lines limit the integration density. We present a passive approach to an athermal design that involves compensation of positive TO effects from a silicon core by negative TO effects of the polymer cladding. In addition, the design rule involves engineering the waveguide core geometry depending on the resonance wavelength under consideration to ensure desired amount of light in the polymer. We develop exact design requirements for a TO peak stability of 0 pm/K and present prototype performance of 0.5 pm/K. We explore the material design space through initiated chemical vapor deposition (iCVD) of 2 polymer cladding choices. We study the effect of cross-linking on the optical properties of a polymer and establish the superior performance of the co-polymer cladding compared to the homo-polymer. Integration of polymer clad devices in an electronic-photonic architecture requires the possibility of multi-layer stacking capability. We use a low temperature, high density plasma chemical vapor deposition of SiO2/SiN x to hermetically seal the athermal. Further, we employ visible light for

Flexible manufacturing for photonics device assembly

International Nuclear Information System (INIS)

Lu, Shin-yee; Young, K.D.

1994-01-01

The assembly of photonics devices such as laser diodes, optical modulators, and optoelectronics (OE) multi-chip modules usually requires the placement of micron-size devices, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (pigtailing). This is a labor-intensive process. Studies done by the OE industry have shown that 95% of the cost of a pigtailed photonic device is attributed to the current practice of manual alignment and bonding techniques. At Lawrence Livermore National Laboratory, the authors are working to reduce the cost of packaging OE devices, through the use of automation

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

Directory of Open Access Journals (Sweden)

Mehmet Cengiz Onbasli

2013-11-01

Full Text Available Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4O3−δ and polycrystalline (CeY2Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

Optical devices based on liquid crystal photonic bandgap fibers

DEFF Research Database (Denmark)

Alkeskjold, Thomas Tanggaard

2005-01-01

the waveguiding mechanism of LC filled PCFs. The principle of tunable fibers based on LCs is thereafter discussed and an alignment and coating study of LC in capillaries is presented. Next, the Liquid Crystal Photonic BandGap (LCPBG) fiber is presented and the waveguiding mechanism is analyzed through plane...... hole. The presence of a LC in the holes of the PCF transforms the fiber from a Total Internal Reflection (TIR) guiding type into a Photonic BandGap (PBG) guiding type, where light is confined to the silica core by coherent scattering from the LC-billed holes. The high dielectric and optical anisotropy...

Graphene-Based Josephson-Junction Single-Photon Detector

Science.gov (United States)

Walsh, Evan D.; Efetov, Dmitri K.; Lee, Gil-Ho; Heuck, Mikkel; Crossno, Jesse; Ohki, Thomas A.; Kim, Philip; Englund, Dirk; Fong, Kin Chung

2017-08-01

We propose to use graphene-based Josephson junctions (GJJs) to detect single photons in a wide electromagnetic spectrum from visible to radio frequencies. Our approach takes advantage of the exceptionally low electronic heat capacity of monolayer graphene and its constricted thermal conductance to its phonon degrees of freedom. Such a system could provide high-sensitivity photon detection required for research areas including quantum information processing and radio astronomy. As an example, we present our device concepts for GJJ single-photon detectors in both the microwave and infrared regimes. The dark count rate and intrinsic quantum efficiency are computed based on parameters from a measured GJJ, demonstrating feasibility within existing technologies.

Silicon photonic transceiver circuit for high-speed polarization-based discrete variable quantum key distribution.

Science.gov (United States)

Cai, Hong; Long, Christopher M; DeRose, Christopher T; Boynton, Nicholas; Urayama, Junji; Camacho, Ryan; Pomerene, Andrew; Starbuck, Andrew L; Trotter, Douglas C; Davids, Paul S; Lentine, Anthony L

2017-05-29

We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.

Single-mode amplification in Yb-doped rod-type photonic crystal fibers for high brilliance lasers

DEFF Research Database (Denmark)

Poli, F.; Lægsgaard, Jesper; Passaro, D.

2009-01-01

This paper presents the effect of a low refractive index ring in the Yb-doped rod-type photonic crystal fibre core on the guided mode propagation and analyzed through a spatial and spectral amplifier model. The ring provides a higher differential overlap between the fundamental mode (FM...... to identify a proper ring characteristic that is width, position and refractive index. Then rod-type PCF designs have been optimized with a full-vector modal solver based on the finite-element method. Then, the amplification properties of the Yb-doped rod-type PCFs have been investigated by assuming a forward...

Double-Sided Electrochromic Device Based on Metal-Organic Frameworks.

Science.gov (United States)

Mjejri, Issam; Doherty, Cara M; Rubio-Martinez, Marta; Drisko, Glenna L; Rougier, Aline

2017-11-22

Devices displaying controllably tunable optical properties through an applied voltage are attractive for smart glass, mirrors, and displays. Electrochromic material development aims to decrease power consumption while increasing the variety of attainable colors, their brilliance, and their longevity. We report the first electrochromic device constructed from metal organic frameworks (MOFs). Two MOF films, HKUST-1 and ZnMOF-74, are assembled so that the oxidation of one corresponds to the reduction of the other, allowing the two sides of the device to simultaneously change color. These MOF films exhibit cycling stability unrivaled by other MOFs and a significant optical contrast in a lithium-based electrolyte. HKUST-1 reversibly changed from bright blue to light blue and ZnMOF-74 from yellow to brown. The electrochromic device associates the two MOF films via a PMMA-lithium based electrolyte membrane. The color-switching of these MOFs does not arise from an organic-linker redox reaction, signaling unexplored possibilities for electrochromic MOF-based materials.

Infrared detection and photon energy up-conversion in graphene layer infrared photodetectors integrated with LEDs based on van der Waals heterostructures: Concept, device model, and characteristics

Science.gov (United States)

Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Karasik, V. E.; Shur, M. S.

2017-09-01

We propose the concept of the infrared detection and photon energy up-conversion in the devices using the integration of the graphene layer infrared detectors (GLIPs) and the light emitting diodes (LEDs) based on van der Waals (vdW) heterostructures. Using the developed device model of the GLIP-LEDs, we calculate their characteristics. The GLIP-LED devices can operate as the detectors of far- and mid infrared radiation (FIR and MIR) with an electrical output or with near-infrared radiation (NIR) or visible radiation (VIR) output. In the latter case, GLIP-LED devices function as the photon energy up-converters of FIR and MIR to NIR or VIR. The operation of GLIP-LED devices is associated with the injection of the electron photocurrent produced due to the interband absorption of the FIR/MIR photons in the GLIP part into the LED emitting NIR/VIR photons. We calculate the GLIP-LED responsivity and up-conversion efficiency as functions the structure parameters and the energies of the incident FIR/MIR photons and the output NIR/VIR photons. The advantages of the GLs in the vdW heterostructures (relatively high photoexcitation rate from and low capture efficiency into GLs) combined with the reabsorption of a fraction of the NIR/FIR photon flux in the GLIP (which can enable an effective photonic feedback) result in the elevated GLIP-LED device responsivity and up-conversion efficiency. The positive optical feedback from the LED section of the device lead to increasing current injection enabling the appearance of the S-type current-voltage characteristic with a greatly enhanced responsivity near the switching point and current filamentation.

Fast broad-band photon detector based on quantum well devices and charge-integrating electronics for non-invasive FEL monitoring

Energy Technology Data Exchange (ETDEWEB)

Antonelli, M., E-mail: matias.antonelli@elettra.eu; Cautero, G.; Sergo, R.; Castellaro, C.; Menk, R. H. [Elettra – Sincrotrone Trieste S.C.p.A., Trieste (Italy); Ganbold, T. [School in Nanotechnology, University of Trieste, Trieste (Italy); IOM CNR, Laboratorio TASC, Trieste (Italy); Biasiol, G. [IOM CNR, Laboratorio TASC, Trieste (Italy)

2016-07-27

The recent evolution of free-electron lasers has not been matched by the development of adequate beam-monitoring instrumentation. However, for both experimental and diagnostics purposes, it is crucial to keep such photon beams under control, avoiding at the same time the absorption of the beam and the possible destruction of the detector. These requirements can be fulfilled by utilizing fast and non-invasive photon detectors operated in situ, upstream from the experimental station. From this perspective, sensors based on Quantum Well (QW) devices can be the key to detecting ultra-short light pulses. In fact, owing to their high electron mobility, InGaAs/InAlAs QW devices operated at room temperature exhibit sub-nanosecond response times. Their direct, low-energy band gap renders them capable of detecting photons ranging from visible to X-ray. Furthermore, the 2D electron gas forming inside the QW is responsible for a charge amplification mechanism, which increases the charge collection efficiency of these devices. In order to acquire the signals produced by these QW sensors, a novel readout electronics has been developed. It is based on a high-speed charge integrator, which allows short, low-intensity current pulses to be read within a 50-ns window. The integrated signal is acquired through an ADC and the entire process can be performed at a 10-MHz repetition rate. This work provides a detailed description of the development of the QW detectors and the acquisition electronics, as well as reporting the main experimental results, which show how these tools are well suited for the realization of fast, broad-band beam monitors.

High brightness single photon sources based on photonic wires

DEFF Research Database (Denmark)

Claudon, J.; Bleuse, J.; Bazin, M.

2009-01-01

We present a novel single-photon-source based on the emission of a semiconductor quantum dot embedded in a single-mode photonic wire. This geometry ensures a very large coupling (> 95%) of the spontaneous emission to the guided mode. Numerical simulations show that a photon collection efficiency...

Printable photonic crystals with high refractive index for applications in visible light

International Nuclear Information System (INIS)

Calafiore, Giuseppe; Mejia, Camilo A; Munechika, Keiko; Peroz, Christophe; Piña-Hernandez, Carlos; Fillot, Quentin; Dhuey, Scott; Sassolini, Simone; Salvadori, Filippo; Cabrini, Stefano

2016-01-01

Nanoimprint lithography (NIL) of functional high-refractive index materials has proved to be a powerful candidate for the inexpensive manufacturing of high-resolution photonic devices. In this paper, we demonstrate the fabrication of printable photonic crystals (PhCs) with high refractive index working in the visible wavelengths. The PhCs are replicated on a titanium dioxide-based high-refractive index hybrid material by reverse NIL with almost zero shrinkage and high-fidelity reproducibility between mold and printed devices. The optical responses of the imprinted PhCs compare very well with those fabricated by conventional nanofabrication methods. This study opens the road for a low-cost manufacturing of PhCs and other nanophotonic devices for applications in visible light. (paper)

Photonic crystal ring resonator based optical filters for photonic integrated circuits

International Nuclear Information System (INIS)

Robinson, S.

2014-01-01

In this paper, a two Dimensional (2D) Photonic Crystal Ring Resonator (PCRR) based optical Filters namely Add Drop Filter, Bandpass Filter, and Bandstop Filter are designed for Photonic Integrated Circuits (PICs). The normalized output response of the filters is obtained using 2D Finite Difference Time Domain (FDTD) method and the band diagram of periodic and non-periodic structure is attained by Plane Wave Expansion (PWE) method. The size of the device is minimized from a scale of few tens of millimeters to the order of micrometers. The overall size of the filters is around 11.4 μm × 11.4 μm which is highly suitable of photonic integrated circuits

Advanced development of catalysts by using the high-brilliance synchrotron radiation in SPring-8

International Nuclear Information System (INIS)

2006-10-01

The advanced development of catalysts by using the high-brilliance synchrotron radiation in SPring-8 is described: (1) the industrial use of SPring-8, (2) the analytical methods of catalyst using SPring-8 (XAFS, powder X-ray diffraction, thin film X-ray scattering, X-ray imaging, infrared analysis, X-ray fluorescence analysis, and photoelectron spectroscopy etc.), (3) the history of synchrotron radiation and catalyst investigations, (4) the new advanced measuring methods of catalyst using synchrotron radiation (various X-ray spectroscopic methods, and application of XAFS to highly-disperse systems of catalyst), and (5) the new advanced development of catalysts using synchrotron radiation and its applications (motor-car catalysts, light catalysts, fuel cells, nanotechnology, and trace amounts of catalyst in wastes). (M.H.)

A multiple objective magnet sorting algorithm for the ALS insertion devices

International Nuclear Information System (INIS)

Humphries, D.; Goetz, F.; Kownacki, P.; Marks, S.; Schlueter, R.

1994-07-01

Insertion devices for the Advanced Light Source (ALS) incorporate large numbers of permanent magnets which have a variety of magnetization orientation errors. These orientation errors can produce field errors which affect both the spectral brightness of the insertion devices and the storage ring electron beam dynamics. A perturbation study was carried out to quantify the effects of orientation errors acting in a hybrid magnetic structure. The results of this study were used to develop a multiple stage sorting algorithm which minimizes undesirable integrated field errors and essentially eliminates pole excitation errors. When applied to a measured magnet population for an existing insertion device, an order of magnitude reduction in integrated field errors was achieved while maintaining near zero pole excitation errors

Design and finite element simulation of vacuum systems for insertion devices in Indus-2 storage ring

International Nuclear Information System (INIS)

Yadav, D.P.; Bais, Vijay; Sridhar, R.; Dhimole, Vivek K.; Nitesh, Suthar; Rawal, B.R.; Chogaonkar, Swati

2015-01-01

Indus-2 is a 2.5 GeV, 300 mA, Synchrotron Radiation Source (SRS) located at Raja Ramanna Centre for Advanced Technology, Indore. As part of insertion device (ID) development programme two new devices namely, APPLE-2 (Advanced Planar Polarized Light Emitter) type Undulator (also known as U-3 Undulator) and 5 Tesla superconducting wavelength shifter (SWLS) are being developed. APPLE-2 will generate variably polarized synchrotron radiation (SR) required for carrying out magnetic circular dichroism (MCD) and magnetic linear dichroism (MLD) experiments and SWLS will generate synchrotron radiation (SR) with critical photon energy of about 20.8 keV for Energy Dispersive XRD beam line. This paper describes design details and finite element analysis results of various simulations carried out for the vacuum systems of these IDs

Atomic physics at high brilliance synchrotron sources: Proceedings

International Nuclear Information System (INIS)

Berry, G.; Cowan, P.; Gemmell, D.

1994-08-01

This report contains papers on the following topics: present status of SPring-8 and the atomic physics undulator beamline; recent photoabsorption measurements in the rare gases and alkalis in the 3 to 15 keV proton energy region; atomic and molecular physics at LURE; experiments on atoms, ions and small molecules using the new generation of synchrotron radiation sources; soft x-ray fluorescence spectroscopy using tunable synchrotron radiation; soft x-ray fluorescence spectroscopy excited by synchrotron radiation: Inelastic and resonant scattering near threshold; outer-shell photoionization of ions; overview of the APS BESSRC beamline development; the advanced light source: Research opportunities in atomic and molecular physics; Photoionization of the Ba + ion by 4d shell excitation; decay dynamics of inner-shell excited atoms and molecules; absorption of atomic Ca, Cr, Mn and Cu; High-resolution photoelectron studies of resonant molecular photoionization; radiative and radiationless resonant raman scattering by synchrotron radiation; auger spectrometry of atoms and molecules; some thoughts of future experiments with the new generation of storage rings; Electron spectroscopy studies of argon K-shell excitation and vacancy cascades; ionization of atoms by high energy photons; ion coincidence spectroscopy on rare gas atoms and small molecules after photoexcitation at energies of several keV; an EBIS for use with synchrotron radiation photoionization of multiply charged ions and PHOBIS; gamma-2e coincidence measurements the wave of the future in inner-shell electron spectroscopy; recoil momentum spectroscopy in ion-atom and photon-atom collisions; a study of compton ionization of helium; future perspectives of photoionization studies at high photon energies; and status report on the advanced photon source. These papers have been cataloged separately elsewhere

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

High velocity pulse biopsy device enables controllable and precise needle insertion and high yield tissue acquisition.

Science.gov (United States)

Schässburger, Kai-Uwe; Paepke, Stefan; Saracco, Ariel; Azavedo, Edward; Ekström, Christina; Wiksell, Hans

2018-02-01

Minimally invasive biopsies are a cornerstone of breast cancer management with ultrasound being the preferred guidance modality. New developments in breast cancer management and advances in imaging technologies bring new challenges to current biopsy methodologies. A new biopsy device (NeoNavia® biopsy system, 14 G) was developed. It incorporates a pneumatic needle insertion mechanism that is intended to provide better control of needle progression and enable stepwise insertion without noticeable deformation or displacement of surrounding tissue as visualized under ultrasound. A new method of tissue acquisition was designed to achieve a sampling yield higher than standard methodologies. Needle dynamics was assessed on a specifically designed test bed and sampling performance was compared to a Magnum® biopsy instrument (Bard, Covington, GA, USA) in representative tissue models. The histological quality of samples obtained ex-vivo was evaluated. A pneumatic pulse was measured to accelerate the needle to a maximum velocity of 21.2 ± 2.5 m/s on a stroke length of 2.5 mm, achieving significantly higher acceleration, maximum velocity and power than current biopsy devices. Mean weight of samples obtained by the NeoNavia device were 3.5, 4.6, and 4.3 times higher when sampling was performed in turkey breast, calf thymus and swine pancreas, respectively, as compared to samples obtained with the Magnum instrument. Ex-vivo analysis indicates that the method of tissue acquisition has no apparent negative impact on the histopathologic quality of obtained samples. Copyright © 2018 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

A Tunable Eight-Wavelength Terahertz Modulator Based on Photonic Crystals

Science.gov (United States)

Ji, K.; Chen, H.; Zhou, W.; Zhuang, Y.; Wang, J.

2017-11-01

We propose a tunable eight-wavelength terahertz modulator based on a structure of triple triangular lattice photonic crystals by using photonic crystals in the terahertz regime. The triple triangular lattice was formed by nesting circular, square, and triangular dielectric cylinders. Three square point defects were introduced into the perfect photonic crystal to produce eight defect modes. GaAs was used as the point defects to realize tunability. We used a structure with a reflecting barrier to achieve modulation at high transmission rate. The insertion loss and extinction ratio were 0.122 and 38.54 dB, respectively. The modulation rate was 0.788 dB. The performance of the eightwavelength terahertz modulator showed great potential for use in future terahertz communication systems.

Photonic Crystal Nanocavity Devices for Nonlinear Signal Processing

DEFF Research Database (Denmark)

Yu, Yi

, membranization of InP/InGaAs structure and wet etching. Experimental investigation of the switching dynamics of InP photonic crystal nanocavity structures are carried out using short-pulse homodyne pump-probe techniques, both in the linear and nonlinear region where the cavity is perturbed by a relatively small......This thesis deals with the investigation of InP material based photonic crystal cavity membrane structures, both experimentally and theoretically. The work emphasizes on the understanding of the physics underlying the structures’ nonlinear properties and their applications for all-optical signal...... processing. Based on the previous fabrication recipe developed in our III-V platform, several processing techniques are developed and optimized for the fabrication of InP photonic crystal membrane structures. Several key issues are identified to ensure a good device quality such as air hole size control...

Printed polymer photonic devices for optical interconnect systems

Science.gov (United States)

Subbaraman, Harish; Pan, Zeyu; Zhang, Cheng; Li, Qiaochu; Guo, L. J.; Chen, Ray T.

2016-03-01

Polymer photonic device fabrication usually relies on the utilization of clean-room processes, including photolithography, e-beam lithography, reactive ion etching (RIE) and lift-off methods etc, which are expensive and are limited to areas as large as a wafer. Utilizing a novel and a scalable printing process involving ink-jet printing and imprinting, we have fabricated polymer based photonic interconnect components, such as electro-optic polymer based modulators and ring resonator switches, and thermo-optic polymer switch based delay networks and demonstrated their operation. Specifically, a modulator operating at 15MHz and a 2-bit delay network providing up to 35.4ps are presented. In this paper, we also discuss the manufacturing challenges that need to be overcome in order to make roll-to-roll manufacturing practically viable. We discuss a few manufacturing challenges, such as inspection and quality control, registration, and web control, that need to be overcome in order to realize true implementation of roll-to-roll manufacturing of flexible polymer photonic systems. We have overcome these challenges, and currently utilizing our inhouse developed hardware and software tools, <10μm alignment accuracy at a 5m/min is demonstrated. Such a scalable roll-to-roll manufacturing scheme will enable the development of unique optoelectronic devices which can be used in a myriad of different applications, including communication, sensing, medicine, security, imaging, energy, lighting etc.

Data reading with the aid of one-photon and two-photon luminescence in three-dimensional optical memory devices based on photochromic materials

International Nuclear Information System (INIS)

Akimov, Denis A; Zheltikov, Aleksei M; Koroteev, Nikolai I; Naumov, A N; Fedotov, Andrei B; Magnitskiy, Sergey A; Sidorov-Biryukov, D A; Sokolyuk, N T

1998-01-01

The problem of nondestructive reading of the data stored in the interior of a photochromic sample was analysed. A comparison was made of the feasibility of reading based on one-photon and two-photon luminescence. A model was proposed for the processes of reading the data stored in photochromic molecules with the aid of one-photon and two-photon luminescence. In addition to photochromic transitions, account was taken of the transfer of populations between optically coupled transitions in molecules under the action of the exciting radiation. This model provided a satisfactory description of the kinetics of decay of the coloured form of bulk samples of spiropyran and made it possible to determine experimentally the quantum yield of the reverse photoreaction as well as the two-photon absorption cross section of the coloured form. Measurements were made of the characteristic erasure times of the data stored in a photochromic medium under one-photon and two-photon luminescence reading conditions. It was found that the use of two-photon luminescence made it possible to enhance considerably the contrast and localisation of the optical data reading scheme in three-dimensional optical memory devices. The experimental results were used to estimate the two-photon absorption cross section of the coloured form of a sample of indoline spiropyran in a polymethyl methacrylate matrix. (laser applications and other topics in quantum electronics)

Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

Science.gov (United States)

2018-01-08

engineer next-generation carbon-based optoelectronic and photonic devices with superior performance and capabilities. These devices include carbon...electronics; (4) nanostructured graphene plasmonics; and (5) polymer-nanotube conjugate chemistry . (1) Semiconducting carbon nanotube-based...applications (In Preparation, 2018). (5) Polymer-nanotube conjugate chemistry Conjugated polymers can be exploited as agents for selectively wrapping and

Photonic lantern with multimode fibers embedded

Science.gov (United States)

Yu, Hai-Jiao; Yan, Qi; Huang, Zong-Jun; Tian, He; Jiang, Yu; Liu, Yong-Jun; Zhang, Jian-Zhong; Sun, Wei-Min

2014-08-01

A photonic lantern is studied which is formed by seven multimode fibers inserted into a pure silica capillary tube. The core of the tapered end has a uniform refractive index because the polymer claddings are removed before the fibers are inserted. Consequently, the light distribution is also uniform. Two theories describing a slowly varying waveguide and multimode coupling are used to analyze the photonic lantern. The transmission loss decreases as the length of the tapered part increases. For a device with a taper length of 3.4 cm, the loss is about 1.06 dB on average for light propagating through the taper from an inserted fiber to the tapered end and 0.99 dB in the reverse direction. For a device with a taper length of 0.7 cm, the two loss values are 2.63 dB and 2.53 dB, respectively. The results show that it is possible to achieve a uniform light distribution with the tapered end and a low-loss transmission in the device if parameters related to the lantern are reasonably defined.

Photonic lantern with multimode fibers embedded

International Nuclear Information System (INIS)

Yu Hai-Jiao; Yan Qi; Huang Zong-Jun; Tian He; Jiang Yu; Liu Yong-Jun; Zhang Jian-Zhong; Sun Wei-Min

2014-01-01

A photonic lantern is studied which is formed by seven multimode fibers inserted into a pure silica capillary tube. The core of the tapered end has a uniform refractive index because the polymer claddings are removed before the fibers are inserted. Consequently, the light distribution is also uniform. Two theories describing a slowly varying waveguide and multimode coupling are used to analyze the photonic lantern. The transmission loss decreases as the length of the tapered part increases. For a device with a taper length of 3.4 cm, the loss is about 1.06 dB on average for light propagating through the taper from an inserted fiber to the tapered end and 0.99 dB in the reverse direction. For a device with a taper length of 0.7 cm, the two loss values are 2.63 dB and 2.53 dB, respectively. The results show that it is possible to achieve a uniform light distribution with the tapered end and a low-loss transmission in the device if parameters related to the lantern are reasonably defined. (research papers)

Multidimensional microstructured photonic device based on all-solid waveguide array fiber and magnetic fluid

Directory of Open Access Journals (Sweden)

Miao Yinping

2016-11-01

Full Text Available An all-solid waveguide array fiber (WAF is one kind of special microstructured optical fiber in which the higher-index rods are periodically distributed in a low-index silica host to form the transverse two-dimensional photonic crystal. In this paper, one kind of multidimensional microstructured optical fiber photonic device is proposed by using electric arc discharge method to fabricate periodic tapers along the fiber axis. By tuning the applied magnetic field intensity, the propagation characteristics of the all-solid WAF integrated with magnetic fluid are periodically modulated in both radial and axial directions. Experimental results show that the wavelength changes little while the transmission loss increases for an applied magnetic field intensity range from 0 to 500 Oe. The magnetic field sensitivity is 0.055 dB/Oe within the linear range from 50 to 300 Oe. Meanwhile, the all-solid WAF has very similar thermal expansion coefficient for both high- and low-refractive index glasses, and thermal drifts have a little effect on the mode profile. The results show that the temperature-induced transmission loss is <0.3 dB from 26°C to 44°C. Further tuning coherent coupling of waveguides and controlling light propagation, the all-solid WAF would be found great potential applications to develop new micro-nano photonic devices for optical communications and optical sensing applications.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

Science.gov (United States)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon.

Science.gov (United States)

Tokel, Onur; Turnali, Ahmet; Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F Ömer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e. , " in-chip" microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.

Micro-/nanoscale multi-field coupling in nonlinear photonic devices

Science.gov (United States)

Yang, Qing; Wang, Yubo; Tang, Mingwei; Xu, Pengfei; Xu, Yingke; Liu, Xu

2017-08-01

The coupling of mechanics/electronics/photonics may improve the performance of nanophotonic devices not only in the linear region but also in the nonlinear region. This review letter mainly presents the recent advances on multi-field coupling in nonlinear photonic devices. The nonlinear piezoelectric effect and piezo-phototronic effects in quantum wells and fibers show that large second-order nonlinear susceptibilities can be achieved, and second harmonic generation and electro-optic modulation can be enhanced and modulated. Strain engineering can tune the lattice structures and induce second order susceptibilities in central symmetry semiconductors. By combining the absorption-based photoacoustic effect and intensity-dependent photobleaching effect, subdiffraction imaging can be achieved. This review will also discuss possible future applications of these novel effects and the perspective of their research. The review can help us develop a deeper knowledge of the substance of photon-electron-phonon interaction in a micro-/nano- system. Moreover, it can benefit the design of nonlinear optical sensors and imaging devices with a faster response rate, higher efficiency, more sensitivity and higher spatial resolution which could be applied in environmental detection, bio-sensors, medical imaging and so on.

Insertion devices and beamlines for the proposed Australian synchrotron light source

International Nuclear Information System (INIS)

Garrett, R.F.; Boldeman, J.W.

1999-01-01

Full text: The proposed Australian synchrotron light source, Boomerang, is a third generation 3 GeV storage ring which is designed to provide for the great majority of Australian requirements for synchrotron radiation well into the next century. The storage ring could accommodate up to 60 experimental stations, including beamlines from 9 insertion devices, which far exceeds the projected Australian requirements over the life of the facility. Undulator radiation will be available up to 20 keV. The first phase construction of Boomerang includes funding for 9 beamlines, comprising 5 bending magnet and 4 insertion device beamlines. The beamline complement has been chosen to cater for approximately 95% of the current and projected Australian demand for synchrotron radiation over the first 5 years operation of the facility. Details will be shown of the performance of the proposed insertion devices, and the initial beamline complement will be presented

Storage ring design of the 8 GeV synchrotron radiation facility (SPring-8)

International Nuclear Information System (INIS)

Hara, M.; Bc, S.H.; Motonaga, S.

1990-01-01

In Japan, RIKEN (Institute of Physical and Chemical Research) and JAERI (Japan Atomic Energy Research Institute) have organized a joint design team and started a design study for an 8 GeV synchrotron radiation X-ray source. This paper outlines the status of the design study for the 8 GeV highly brilliant synchrotron radiation X-ray source ring named Super Photon Ring (SPring-8). The facility consists of a main storage ring, a full-energy injector booster synchrotron and a pre-injector 1 GeV linac. The injector linac and synchrotron are laid outside the storage ring because to permit the use of the linac and synchrotron not only as an injector but also as an electron or positron beam source. The purpose of the facility is to provide stable photon beams with high brilliance in the X-ray region. The energy of the stored electrons (positrons) is fixed at 8 GeV to fulfill the required condition using conventional type insertion devices. (N.K.)

Flexible manufacturing for photonics device assembly

Science.gov (United States)

Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David

1994-01-01

The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

International Nuclear Information System (INIS)

Schulze, J.; Oehme, M.; Werner, J.

2012-01-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that – depending on the chosen operating point and device design – the diode serves as a broadband high speed photo detector, Franz–Keldysh effect modulator or light emitting diode.

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

Energy Technology Data Exchange (ETDEWEB)

Schulze, J., E-mail: schulze@iht.uni-stuttgart.de; Oehme, M.; Werner, J.

2012-02-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that - depending on the chosen operating point and device design - the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

Development of a tapping device: a new needle insertion method for prostate brachytherapy

International Nuclear Information System (INIS)

Lagerburg, V; Moerland, M A; Konings, M K; Vosse, R E van de; Lagendijk, J J W; Battermann, J J

2006-01-01

The purpose of this study is to develop and test a tapping device for needle insertion for prostate brachytherapy. This device will tap the needle into the prostate with a certain, well-defined, amount of momentum, instead of the currently used method of pushing the needle. Because of the high needle insertion velocity, we expect prostate motion and deformation to be less compared to current methods. We measured the momentum that is applied when manually tapping the needle into the prostate and found a mean momentum of 0.50 ± 0.07 N s. The tapping device is pneumatically driven and we found that the delivered momentum increased linearly with the applied air pressure. The efficacy of the tapping device was tested on a piece of beef, placed on a freely moving and rotating platform. A significant correlation was found between the applied pressure and the rotation and displacement of the beef. Displacements and rotations were minimal for the highest pressure (4 bar) and amounted to only 2 mm and 6 deg., respectively. Higher air pressures will further reduce displacements and rotations

GaAs Photonic Integrated Circuit (PIC) development for high performance communications

Energy Technology Data Exchange (ETDEWEB)

Sullivan, C.T.

1998-03-01

Sandia has established a foundational technology in photonic integrated circuits (PICs) based on the (Al,Ga,In)As material system for optical communication, radar control and testing, and network switching applications at the important 1.3{mu}m/1.55{mu}m wavelengths. We investigated the optical, electrooptical, and microwave performance characteristics of the fundamental building-block PIC elements designed to be as simple and process-tolerant as possible, with particular emphasis placed on reducing optical insertion loss. Relatively conventional device array and circuit designs were built using these PIC elements: (1) to establish a baseline performance standard; (2) to assess the impact of epitaxial growth accuracy and uniformity, and of fabrication uniformity and yield; (3) to validate our theoretical and numerical models; and (4) to resolve the optical and microwave packaging issues associated with building fully packaged prototypes. Novel and more complex PIC designs and fabrication processes, viewed as higher payoff but higher risk, were explored in a parallel effort with the intention of meshing those advances into our baseline higher-yield capability as they mature. The application focus targeted the design and fabrication of packaged solitary modulators meeting the requirements of future wideband and high-speed analog and digital data links. Successfully prototyped devices are expected to feed into more complex PICs solving specific problems in high-performance communications, such as optical beamforming networks for phased array antennas.

HPCAT: an integrated high-pressure synchrotron facility at the Advanced Photon Source

International Nuclear Information System (INIS)

Shen, Guoyin; Chow, Paul; Xiao, Yuming; Sinogeikin, Stanislav; Meng, Yue; Yang, Wenge; Liermann, Hans-Peter; Shebanova, Olga; Rod, Eric; Bommannavar, Arunkumar; Mao, Ho-Kwang

2008-01-01

The high pressure collaborative access team (HPCAT) was established to advance cutting edge, multidisciplinary, high-pressure (HP) science and technology using synchrotron radiation at sector 16 of the Advanced Photon Source of Argonne National Laboratory. The integrated HPCAT facility has established four operating beamlines in nine hutches. Two beamlines are split in energy space from the insertion device (16ID) line, whereas the other two are spatially divided into two fans from the bending magnet (16BM) line. An array of novel X-ray diffraction and spectroscopic techniques has been integrated with HP and extreme temperature instrumentation at HPCAT. With a multidisciplinary approach and multi-institution collaborations, the HP program at the HPCAT has been enabling myriad scientific breakthroughs in HP physics, chemistry, materials, and Earth and planetary sciences.

Ultracompact photonic crystal polarization beam splitter based on multimode interference.

Science.gov (United States)

Lu, Ming-Feng; Liao, Shan-Mei; Huang, Yang-Tung

2010-02-01

We propose a theoretical design for a compact photonic crystal (PC) polarization beam splitter (PBS) based on the multimode interference (MMI) effect. The size of a conventional MMI device designed by the self-imaging principle is not compact enough; therefore, we design a compact PC PBS based on the difference of the interference effect between TE and TM modes. Within the MMI coupler, the dependence of interference of modes on propagation distance is weak for a TE wave and strong for a TM wave; as a result, the length of the MMI section can be only seven lattice constants. Simulation results show that the insertion losses are 0.32 and 0.89 dB, and the extinction ratios are 14.4 and 17.5 dB for Port 1 (TE mode) and Port 2 (TM mode), respectively.

Towards roll-to-roll manufacturing of polymer photonic devices

Science.gov (United States)

Subbaraman, Harish; Lin, Xiaohui; Ling, Tao; Guo, L. Jay; Chen, Ray T.

2014-03-01

Traditionally, polymer photonic devices are fabricated using clean-room processes such as photolithography, e-beam lithography, reactive ion etching (RIE) and lift-off methods etc, which leads to long fabrication time, low throughput and high cost. We have utilized a novel process for fabricating polymer photonic devices using a combination of imprinting and ink jet printing methods, which provides high throughput on a variety of rigid and flexible substrates with low cost. We discuss the manufacturing challenges that need to be overcome in order to realize true implementation of roll-to-roll manufacturing of flexible polymer photonic systems. Several metrology and instrumentation challenges involved such as availability of particulate-free high quality substrate, development and implementation of high-speed in-line and off-line inspection and diagnostic tools with adaptive control for patterned and unpatterned material films, development of reliable hardware, etc need to be addressed and overcome in order to realize a successful manufacturing process. Due to extreme resolution requirements compared to print media, the burden of software and hardware tools on the throughput also needs to be carefully determined. Moreover, the effect of web wander and variations in web speed need to accurately be determined in the design of the system hardware and software. In this paper, we show the realization of solutions for few challenges, and utilizing these solutions for developing a high-rate R2R dual stage ink-jet printer that can provide alignment accuracy of web speed of 5m/min. The development of a roll-to-roll manufacturing system for polymer photonic systems opens limitless possibilities for the deployment of high performance components in a variety of applications including communication, sensing, medicine, agriculture, energy, lighting etc.

Tune shift and betatron modulations due to insertion devices in SPEAR

International Nuclear Information System (INIS)

Corbett, W.J.

1989-12-01

SPEAR will soon operate as a dedicated synchrotron radiation source with up to 5 beamlines fed from insertion devices. These magnets introduce additional focusing forces into the storage ring lattice which increase the vertical betatron tune and modulate the beam envelope in the vertical plane. The lattice simulation code 'GEMINI' is used to evaluate the tune shifts and estimate the degree of betatron modulation as each magnetic insertion device is brought up to full power. A program is recommended to correct the tunes with the FODO cell quadrupoles. 4 refs., 8 figs., 1 tab

Selected publications related to the experimental facilities of the Advanced Photon Source, 1987--1991

International Nuclear Information System (INIS)

1992-01-01

This report contain papers on work related to the experimental facilities of the Advanced Photon Source. The general topics of these papers are: insertion devices; front ends; high heat load x-ray optics; novel optics and techniques; and radiation safety, interlocks, and personnel safety

Extending the process limits of laser polymer welding with high-brilliance beam sources (recent status and prospects of POLYBRIGHT)

Science.gov (United States)

Olowinsky, A.; Boglea, A.

2011-03-01

Plastics play an important role in almost every facet of our lives and constitute a wide variety of products, from everyday products such as food and beverage packaging, over furniture and building materials to high tech products in the automotive, electronics, aerospace, white goods, medical and other sectors [1]. The objective of PolyBright, the European Research project on laser polymer welding, is to provide high speed and flexible laser manufacturing technology and expand the limits of current plastic part assembly. New laser polymer joining processes for optimized thermal management in combination with adapted wavelengths will provide higher quality, high processing speed up to 1 m/s and robust manufacturing processes at lower costs. Key innovations of the PolyBright project are fibre lasers with high powers up to 500 W, high speed scanning and flexible beam manipulation systems for simultaneous welding and high-resolution welding, such as dynamic masks and multi kHz scanning heads. With this initial step, PolyBright will break new paths in processing of advanced plastic products overcoming the quality and speed limitations of conventional plastic part assembly. Completely new concepts for high speed processing, flexibility and quality need to be established in combination with high brilliance lasers and related equipment. PolyBright will thus open new markets for laser systems with a short term potential of over several 100 laser installations per year and a future much larger market share in the still growing plastic market. PolyBright will hence establish a comprehensive and sustainable development activity on new high brilliance lasers that will strengthen the laser system industry.

Recent advances in insertion devices

International Nuclear Information System (INIS)

Gluskin, E.; Moog, E.R.

1995-01-01

Demand for more and better insertion devices (IDs) at new third-generation synchrotron radiation facilities has led to significant advances in ID technology at different laboratories around the world. In this overview of this progress, focus is on those results that apply to IDs in general rather than one specific ID or laboratory. The advances fall into two general categories: those that reduce the net effect that the ID has on the particle beam, and those that enhance the quality of the emitted light spectrum. The need for these advances, factors that are most important inaachieving them, and the current state of the art are discussed

The Dawn of Nuclear Photonics with Laser-based Gamma-rays

International Nuclear Information System (INIS)

Barty, C.J.

2011-01-01

A renaissance in nuclear physics is occurring around the world because of a new kind of incredibly bright, gamma-ray light source that can be created with short pulse lasers and energetic electron beams. These highly Mono-Energetic Gamma-ray (MEGa-ray) sources produce narrow, laser-like beams of incoherent, tunable gamma-rays and are enabling access and manipulation of the nucleus of the atom with photons or so called 'Nuclear Photonics'. Just as in the early days of the laser when photon manipulation of the valence electron structure of the atom became possible and enabling to new applications and science, nuclear photonics with laser-based gamma-ray sources promises both to open up wide areas of practical isotope-related, materials applications and to enable new discovery-class nuclear science. In the United States, the development of high brightness and high flux MEGa-ray sources is being actively pursued at the Lawrence Livermore National Laboratory in Livermore (LLNL), California near San Francisco. The LLNL work aims to create by 2013 a machine that will advance the state of the art with respect to source the peak brightness by 6 orders of magnitude. This machine will create beams of 1 to 2.3 MeV photons with color purity matching that of common lasers. In Europe a similar but higher photon energy gamma source has been included as part of the core capability that will be established at the Extreme Light Infrastructure Nuclear Physics (ELI-NP) facility in Magurele, Romania outside of Bucharest. This machine is expected to have an end point gamma energy in the range of 13 MeV. The machine will be co-located with two world-class, 10 Petawatt laser systems thus allowing combined intense-laser and gamma-ray interaction experiments. Such capability will be unique in the world. In this talk, Dr. Chris Barty from LLNL will review the state of the art with respect to MEGa-ray source design, construction and experiments and will describe both the ongoing projects

A multiple objective magnet sorting algorithm for the Advanced Light Source insertion devices

International Nuclear Information System (INIS)

Humphries, D.; Goetz, F.; Kownacki, P.; Marks, S.; Schlueter, R.

1995-01-01

Insertion devices for the Advanced Light Source (ALS) incorporate large numbers of permanent magnets which have a variety of magnetization orientation errors. These orientation errors can produce field errors which affect both the spectral brightness of the insertion devices and the storage ring electron beam dynamics. A perturbation study was carried out to quantify the effects of orientation errors acting in a hybrid magnetic structure. The results of this study were used to develop a multiple stage sorting algorithm which minimizes undesirable integrated field errors and essentially eliminates pole excitation errors. When applied to a measured magnet population for an existing insertion device, an order of magnitude reduction in integrated field errors was achieved while maintaining near zero pole excitation errors

General overview and a review of storage rings, research facilities, and insertion devices

International Nuclear Information System (INIS)

Winick, H.

1989-01-01

Synchrotron radiation, the electromagnetic radiation given off by electrons in circular motion, is revolutionizing many branches of science and technology by offering beams of vacuum ultraviolet light and x rays of immense flux and brightness. In the past decade there has been an explosion of interest in these applications leading to increased exploitation of existing rings and activity to construct new research facilities based on advanced storage rings and insertion device sources. Applications include basic and applied research in biology, chemistry, medicine, and physics plus many areas of technology. In this article they present a general overview of the field of synchrotron radiation research, its history, the present status and future prospects of storage rings and research facilities, and the development of wiggler and undulator insertion devices as sources of synchrotron radiation. 66 references, 20 figures, 1 table

Front end designs for the 7-GeV advanced photon source

International Nuclear Information System (INIS)

Shu, D.; Barraza, J.; Sanchez, T.; Nielsen, R.W.; Collins, J.T.; Kuzay, T.M.

1992-01-01

The conceptual designs for the insertion device (ID) and bending magnet (BM) front ends have been completed for the 7-GeV Advanced Photon Source (APS) under construction at Argonne National Laboratory. These designs satisfy the generic front end functions. However, the high power and high heat fluxes imposed by the X-ray sources of the 7-GeV APS have presented various design engineering challenges for the front end. Consideration of such challenges and their solutions have led to novel and advanced features including modularized systems, enhanced heat transfer concepts in the fixed mask and the photon shutter designs, a radiation safety philosophy based on multiple photon shutters for a fail-safe operation, a sub-micron resolution beam position monitor for beam monitoring and ring feedback information, and minimal beam filtering concepts to deliver maximized beam power and spectra to the experimenters. The criteria and special features of the front end design are discussed in this paper

Compact Design of an Electrically Tunable and Rotatable Polarizer Based on a Liquid Crystal Photonic Bandgap Fiber

DEFF Research Database (Denmark)

Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

2009-01-01

In this letter, a compact electrically controlled broadband liquid crystal (LC) photonic bandgap fiber polarizer is designed and fabricated. A good fiber coupling quality between two single-mode fibers and one 10-mm-long LC-filled photonic crystal fiber is obtained and protected by using SU-8 fiber...... fixing structures during the device assembly. The total insertion loss of this all-in-fiber device is 2.7 dB. An electrically tunable polarization extinction ratio of 21.3 dB is achieved with 45$^{circ}$ rotatable transmission axis as well as switched on and off in the wavelength range of 1300–1600 nm....

A high-efficiency electrically-pumped single-photon source based on a photonics nanowire

DEFF Research Database (Denmark)

Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

An electrically-pumped single-photon source design with a predicted efficiency of 89% is proposed. The design is based on a quantum dot embedded in a photonic nanowire with tailored ends and optimized contact electrodes. Unlike cavity-based approaches, the photonic nanowire features broadband...

Single photon image from PET with insertable collimator for boron neutron capture therapy

International Nuclear Information System (INIS)

Jung, Jooyoung; Suh, Tae Suk; Hong, Key Jo

2014-01-01

Boron neutron capture therapy (BNCT) is a radiation therapy technique for treating deep-seated brain tumors by irradiation with a thermal neutron in which boron-labelled low molecular weight compounds. Once completed, a single photon emission computed tomography (SPECT) scan is conducted to investigate for the region of therapy using an isotope exclusive to SPECT. In the case of an existing PET/SPECT combination system, at least two types of isotopes should be used for each scan with their purposes. Recently, researchers examined the effects of PET/SPECT dual modality on animal imaging systems. They reported that the PET/SPECT combination system was effective for simultaneous achievement of a single event and coincidence. The aim of our proposed system is to confirm the feasibility of extraction of two types of images from one PET module with an insertable collimator for brain tumor treatment during the BNCT. We attempted to acquire the PET and SPECT images simultaneously using only PET without an additional isotope. Single photon images were acquired using an insertable collimator on a PET detector

Simulation of photons from plasmas for the applications to display devices

Science.gov (United States)

Lee, Hae June; Yoon, Hyun Jin; Lee, Jae Koo

2007-07-01

Numerical modeling of the photon transport of the ultraviolet (UV) and the visible lights are presented for plasma based display devices. The transport of UV lights which undergo resonance trapping by ground state atoms is solved by using the Holstein equation. After the UV lights are transformed to visible lights at the phosphor surfaces, the visible lights experience complicated traces inside the cell and finally are emitted toward the viewing window after having some power loss within the cell. A three-dimensional ray trace of the visible lights is calculated with a radiosity model. These simulations for the photons strengthen plasma discharge modeling for the application to display devices.

Flexible photonic-crystal Fano filters based on transferred semiconductor nanomembranes

Energy Technology Data Exchange (ETDEWEB)

Zhou Weidong; Yang Hongjun; Qiang Zexuan; Chen Li; Yang Weiquan; Chuwongin, Santhad; Zhao Deyin [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, TX 76019 (United States); Ma Zhenqiang; Qin Guoxuan; Pang Huiqing, E-mail: wzhou@uta.ed, E-mail: mazq@engr.wisc.ed [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI 53706 (United States)

2009-12-07

Crystalline semiconductor nanomembranes (NMs), which are transferable, stackable, bondable and manufacturable, offer unprecedented opportunities for unique and novel device applications. We report and review here nanophotonic devices based on stacked semiconductor NMs that were built on Si, glass and flexible PET substrates. Photonic-crystal Fano resonance based surface-normal optical filters and broadband reflectors have been demonstrated with unique angle and polarization properties. Such a low temperature NM stacking process can lead to a paradigm shift on silicon photonic integration and inorganic flexible photonics.

Glass-embedded two-dimensional silicon photonic crystal devices with a broad bandwidth waveguide and a high quality nanocavity.

Science.gov (United States)

Jeon, Seung-Woo; Han, Jin-Kyu; Song, Bong-Shik; Noda, Susumu

2010-08-30

To enhance the mechanical stability of a two-dimensional photonic crystal slab structure and maintain its excellent performance, we designed a glass-embedded silicon photonic crystal device consisting of a broad bandwidth waveguide and a nanocavity with a high quality (Q) factor, and then fabricated the structure using spin-on glass (SOG). Furthermore, we showed that the refractive index of the SOG could be tuned from 1.37 to 1.57 by varying the curing temperature of the SOG. Finally, we demonstrated a glass-embedded heterostructured cavity with an ultrahigh Q factor of 160,000 by adjusting the refractive index of the SOG.

APS [Advanced Photon Source] interests in PEP

International Nuclear Information System (INIS)

Moncton, D.E.; Shenoy, G.K.; Mills, D.M.

1987-11-01

As one of the very few high-energy electron storage rings in the world, potentially available for synchrotron radiation studies, PEP represents an opportunity to accomplish certain preconstruction R and D tasks relevant to the successful construction and operation of dedicated user facilities such as the Advanced Photon Source (APS) at Argonne. Three topical areas are discussed: Accelerator R and D, Insertion Devices (ID) R and D, and Beam Line Instrumentation R and D

Recent developments at 3rd generation storage ring light sources (2/4)

CERN Multimedia

CERN. Geneva

2009-01-01

Over the last decade, many 3rd generation storage ring light sources have been built and put into operation. Progressively, significant improvements have been brought to the machine performances and experiences developed at the first facilities have benefited to the most recently built ones. Most of the recent facilities are now featuring small emittances, high current together with high position stability. The small sizes of the electron beam at the source points impose achieving position stabilities in the sub micron range. The technology to build the insertion devices that produce the photon beams has reached a very mature state and enables 3 GeV medium energy /medium size machines to produce high brilliance beams up to the hard X-Ray range (10 - 30 keV). The designing of the optical set-up of a beamline includes now the choice of the best suited undulator. All these facilities are operated as “photon factories” and deliver their beams to many beamlines over several thousands hours per year. Some re...

Recent developments at 3rd generation storage ring light sources (4/4)

CERN Multimedia

CERN. Geneva

2009-01-01

Over the last decade, many 3rd generation storage ring light sources have been built and put into operation. Progressively, significant improvements have been brought to the machine performances and experiences developed at the first facilities have benefited to the most recently built ones. Most of the recent facilities are now featuring small emittances, high current together with high position stability. The small sizes of the electron beam at the source points impose achieving position stabilities in the sub micron range. The technology to build the insertion devices that produce the photon beams has reached a very mature state and enables 3 GeV medium energy /medium size machines to produce high brilliance beams up to the hard X-Ray range (10 - 30 keV). The designing of the optical set-up of a beamline includes now the choice of the best suited undulator. All these facilities are operated as “photon factories” and deliver their beams to many beamlines over several thousands hours per year. Some re...

Recent developments at 3rd generation storage ring light sources (3/4)

CERN Multimedia

CERN. Geneva

2009-01-01

Over the last decade, many 3rd generation storage ring light sources have been built and put into operation. Progressively, significant improvements have been brought to the machine performances and experiences developed at the first facilities have benefited to the most recently built ones. Most of the recent facilities are now featuring small emittances, high current together with high position stability. The small sizes of the electron beam at the source points impose achieving position stabilities in the sub micron range. The technology to build the insertion devices that produce the photon beams has reached a very mature state and enables 3 GeV medium energy /medium size machines to produce high brilliance beams up to the hard X-Ray range (10 - 30 keV). The designing of the optical set-up of a beamline includes now the choice of the best suited undulator. All these facilities are operated as “photon factories” and deliver their beams to many beamlines over several thousands hours per year. Some re...

Recent developments at 3rd generation storage ring light sources (1/4)

CERN Multimedia

CERN. Geneva

2009-01-01

Over the last decade, many 3rd generation storage ring light sources have been built and put into operation. Progressively, significant improvements have been brought to the machine performances and experiences developed at the first facilities have benefited to the most recently built ones. Most of the recent facilities are now featuring small emittances, high current together with high position stability. The small sizes of the electron beam at the source points impose achieving position stabilities in the sub micron range. The technology to build the insertion devices that produce the photon beams has reached a very mature state and enables 3 GeV medium energy /medium size machines to produce high brilliance beams up to the hard X-Ray range (10 - 30 keV). The designing of the optical set-up of a beamline includes now the choice of the best suited undulator. All these facilities are operated as “photon factories” and deliver their beams to many beamlines over several thousands hours per year. Some re...

A conceptual design of the set-up for solid state spectroscopy with free electron laser and insertion device radiation

CERN Document Server

Makhov, V N

2001-01-01

The set-up for complex solid state spectroscopy with the use of enhanced properties of radiation from insertion devices and free electron lasers is proposed. Very high flux and pulsed properties of radiation from insertion devices and free electron lasers offer the possibility for the use of such powerful techniques as electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) for the studies of excited states of electronic excitations or defects in solids. The power density of radiation can become high enough for one more method of exited-state spectroscopy: transient optical absorption spectroscopy. The set-up is supposed to combine the EPR/ODMR spectrometer, i.e. cryostat supplied with superconducting magnet and microwave system, and the optical channels for excitation (by radiation from insertion devices or free electron laser) and detection of luminescence (i.e. primary and secondary monochromators). The set-up can be used both for 'conventional' spectroscopy of solids (reflec...

Magneto-optical non-reciprocal devices in silicon photonics

Directory of Open Access Journals (Sweden)

Yuya Shoji

2014-01-01

Full Text Available Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.

Cascaded Mach-Zehnder wavelength filters in silicon photonics for low loss and flat pass-band WDM (de-)multiplexing.

Science.gov (United States)

Horst, Folkert; Green, William M J; Assefa, Solomon; Shank, Steven M; Vlasov, Yurii A; Offrein, Bert Jan

2013-05-20

We present 1-to-8 wavelength (de-)multiplexer devices based on a binary tree of cascaded Mach-Zehnder-like lattice filters, and manufactured using a 90 nm CMOS-integrated silicon photonics technology. We demonstrate that these devices combine a flat pass-band over more than 50% of the channel spacing with low insertion loss of less than 1.6 dB, and have a small device size of approximately 500 × 400 µm. This makes this type of filters well suited for application as WDM (de-)multiplexer in silicon photonics transceivers for optical data communication in large scale computer systems.

Photon technology. Hard photon technology; Photon technology. Hard photon gijutsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-03-01

Research results of hard photon technology have been summarized as a part of novel technology development highly utilizing the quantum nature of photon. Hard photon technology refers to photon beam technologies which use photon in the 0.1 to 200 nm wavelength region. Hard photon has not been used in industry due to the lack of suitable photon sources and optical devices. However, hard photon in this wavelength region is expected to bring about innovations in such areas as ultrafine processing and material synthesis due to its atom selective reaction, inner shell excitation reaction, and spatially high resolution. Then, technological themes and possibility have been surveyed. Although there are principle proposes and their verification of individual technologies for the technologies of hard photon generation, regulation and utilization, they are still far from the practical applications. For the photon source technology, the laser diode pumped driver laser technology, laser plasma photon source technology, synchrotron radiation photon source technology, and vacuum ultraviolet photon source technology are presented. For the optical device technology, the multi-layer film technology for beam mirrors and the non-spherical lens processing technology are introduced. Also are described the reduction lithography technology, hard photon excitation process, and methods of analysis and measurement. 430 refs., 165 figs., 23 tabs.

Cermet insert high voltage holdoff for ceramic/metal vacuum devices

Science.gov (United States)

Ierna, William F.

1987-01-01

An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

International Nuclear Information System (INIS)

Rosikhin, Ahmad; Winata, Toto

2016-01-01

Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 – 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

Selected applications of planar permanent magnet multipoles in FEL insertion device design

International Nuclear Information System (INIS)

Tatchyn, R.

1993-08-01

In recent work, a new class of magnetic multipoles based on planar configurations of permanent magnet (PM) material has been developed. These structures, in particular the quadrupole and sextupole, feature fully open horizontal apertures, and are comparable in effectiveness to conventional iron multipole structures. In this paper results of recent measurements of planar PM quadrupoles and sextupoles are reported and selected applications to FEL insertion device design are considered

High-contrast controllable switching based on polystyrene nonlinear cavities in 2D hole-type photonic crystals

Science.gov (United States)

Paghousi, Roohollah; Fasihi, Kiazand

2018-05-01

We present a new high-contrast controllable switch, which is based on a polystyrene nonlinear cavity, and is implemented in a two dimensional (2D) hole-type photonic crystal (PC). We show that by applying a control signal, the input power can be transmitted to the output waveguide with a high contrast ratio. The operation of the proposed device is investigated through the use of coupled-mode theory (CMT) and finite-difference time-domain (FDTD) method. The contrast ratio of the proposed device varies between 18 and 23, which is higher than the corresponding value in the previous investigations. Based on the simulation results, with increasing the control power the range of operating power will be increased, while the contrast ratio will be decreased. It has been shown that in a modified structure, at the expense of the range of operating power and the contrast ratio, the control power can be decreased, considerably.

Tunable alumina 2D photonic-crystal structures via biomineralization of peacock tail feathers

Science.gov (United States)

Jiang, Yonggang; Wang, Rui; Feng, Lin; Li, Jian; An, Zhonglie; Zhang, Deyuan

2018-04-01

Peacock tail feathers with subtle periodic nanostructures exhibit diverse striking brilliancy, which can be applied as natural templates to fabricate artificial photonic crystals (PhCs) via a biomineralization method. Alumina photonic-crystal structures are successfully synthesized via an immersion and two-step calcination process. The lattice constants of the artificial PhCs are greatly reduced compared to their natural matrices. The lattice constants are tunable by modifying the final annealing conditions in the biomineralization process. The reflection spectra of the alumina photonic-crystal structures are measured, which is related to their material and structural parameters. This work suggests a facile fabrication process to construct alumina PhCs with a high-temperature resistance.

The cryogenic cooling program in high-heat-load optics at the Advanced Photon Source

International Nuclear Information System (INIS)

Rogers, C.S.

1993-07-01

This paper describes some of the aspects of the cryogenic optics program at the Advanced Photon Source (APS). A liquid-nitrogen-cooled, high-vacuum, double crystal monochromator is being fabricated at Argonne National Laboratory (ANL). A pumping system capable of delivering a variable flow rate of up to 10 gallons per minute of pressurized liquid nitrogen and removing 5 kilowatts of x-ray power is also being constructed. This specialized pumping system and monochromator will be used to test the viability of cryogenically cooled, high-heat-load synchrotron optics. It has been determined that heat transfer enhancement will be required for optics used with APS insertion devices. An analysis of a porous-matrix-enhanced monochromator crystal is presented. For the particular case investigated, a heat transfer enhancement factor of 5 to 6 was calculated

A highly efficient single-photon source based on a quantum dot in a photonic nanowire

DEFF Research Database (Denmark)

Claudon, Julien; Bleuse, Joel; Malik, Nitin Singh

2010-01-01

–4 or a semiconductor quantum dot5–7. Achieving a high extraction efficiency has long been recognized as a major issue, and both classical solutions8 and cavity quantum electrodynamics effects have been applied1,9–12. We adopt a different approach, based on an InAs quantum dot embedded in a GaAs photonic nanowire......The development of efficient solid-state sources of single photons is a major challenge in the context of quantum communication,optical quantum information processing and metrology1. Such a source must enable the implementation of a stable, single-photon emitter, like a colour centre in diamond2...

Electrically Driven Photonic Crystal Nanocavity Devices

Science.gov (United States)

2012-01-01

material, here gallium arsenide and indium arsenide self- assembled quantum dots (QDs). QDs are preferred for the gain medium because they can have...blue points ) and 150 K (green points ). The black lines are linear fits to the above threshold output power of the lasers, which are used to find the...SHAMBAT et al.: ELECTRICALLY DRIVEN PHOTONIC CRYSTAL NANOCAVITY DEVICES 1707 Fig. 13. (a) Tilted SEM picture of a fabricated triple cavity device. The in

The linear lattice design of an advanced VUV/SXR photon source for Daresbury

International Nuclear Information System (INIS)

Clarke, J.A.; Corlett, J.N.; Poole, M.W.; Smith, S.L.; Suller, V.P.; Welbourne, L.A.

1992-01-01

The linear lattice design of an advanced synchrotron radiation source in the VUV/SXR region, optimised to produce undulator radiation with high brilliance over the range 5-1000 eV, is discussed. The photon source is based on a 10 cell double bend achromat which will operate over the range 0.5-1.2 GeV. The linear lattice properties over the total available working region are presented for this structure. It is demonstrated that the circular lattice can be extended to a racetrack configuration by the inclusion of two long matched straights with free lengths of over 15 m each. (author) 8 refs.; 5 figs.; 1 tab

Integrable microwave filter based on a photonic crystal delay line.

Science.gov (United States)

Sancho, Juan; Bourderionnet, Jerome; Lloret, Juan; Combrié, Sylvain; Gasulla, Ivana; Xavier, Stephane; Sales, Salvador; Colman, Pierre; Lehoucq, Gaelle; Dolfi, Daniel; Capmany, José; De Rossi, Alfredo

2012-01-01

The availability of a tunable delay line with a chip-size footprint is a crucial step towards the full implementation of integrated microwave photonic signal processors. Achieving a large and tunable group delay on a millimetre-sized chip is not trivial. Slow light concepts are an appropriate solution, if propagation losses are kept acceptable. Here we use a low-loss 1.5 mm-long photonic crystal waveguide to demonstrate both notch and band-pass microwave filters that can be tuned over the 0-50-GHz spectral band. The waveguide is capable of generating a controllable delay with limited signal attenuation (total insertion loss below 10 dB when the delay is below 70 ps) and degradation. Owing to the very small footprint of the delay line, a fully integrated device is feasible, also featuring more complex and elaborate filter functions.

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

Science.gov (United States)

Mangasa Simanjuntak, Firman; Singh, Pragya; Chandrasekaran, Sridhar; Juanda Lumbantoruan, Franky; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen

2017-12-01

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

Advances in graphene-based optoelectronics, plasmonics and photonics

International Nuclear Information System (INIS)

Nguyen, Bich Ha; Nguyen, Van Hieu

2016-01-01

Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented. (review)

Compact, Low-Power, and High-Speed Graphene-Based Integrated Photonic Modulator Technology

Science.gov (United States)

2017-11-02

Compact, Low-Power, and High-Speed Graphene- Based Integrated Photonic Modulator Technology The views, opinions and/or findings contained in this...Graphene-Based Integrated Photonic Modulator Technology Report Term: 0-Other Email: sorger@gwu.edu Distribution Statement: 1-Approved for public release...which is an all-time record at Georgia Tech. Protocol Activity Status: Technology Transfer: Nothing to Report PARTICIPANTS: Person Months Worked

Scintillating fiber tracking at high luminosities using Visible Light Photon counter readout

International Nuclear Information System (INIS)

Atac, M.

1995-11-01

This paper reviews the research work on the Visible Light Photon Counters (VLPC) that have been developed for the scintillating fiber tracking at high luminosity colliders and high rate fixed target experiments. The devices originated from the joint work between UCLA and Rockwell International Science Center. The VLPCs are capable of counting photons very efficiently down to a single photon level with high avalanche gain, producing pulses at very high rates with very short rise times. Due to small gain dispersions they can be used in counting photons with high quantum efficiencies, therefore they are excellent devices for charged particle tracking using small diameter scintillating plastic fibers. In this paper, fiber tracking for the CDF and D0 upgrades and a possible usage of the VLPC readout for the experiment E803 at Fermilab will be discussed

X radiation sources based on accelerators

International Nuclear Information System (INIS)

Couprie, M.E.; Filhol, J.M.

2008-01-01

Light sources based on accelerators aim at producing very high brilliance coherent radiation, tunable from the infrared to X-ray range, with picosecond or femtosecond light pulses. The first synchrotron light sources were built around storage rings in which a large number of relativistic electrons produce 'synchrotron radiation' when their trajectory is subjected to a magnetic field, either in bending magnets or in specific insertion devices (undulators), made of an alternating series of magnets, allowing the number of curvatures to be increased and the radiation to be reinforced. These 'synchrotron radiation' storage rings are now used worldwide (there are more than thirty), and they simultaneously distribute their radiation to several tens of users around the storage ring. The most effective installations in term of brilliance are the so-called third generation synchrotron radiation light sources. The radiation produced presents pulse durations of the order of a few tens of ps, at a high rate (of the order of MHz); it is tunable over a large range, depending on the magnetic field and the electron beam energy and its polarisation is adjustable (in the V-UV-soft-X range). Generally, a very precise spectral selection is made by the users with a monochromator. The single pass linear accelerators can produce very short electron bunches (around 100 fs). The beam of very high electronic density is sent into successive undulator modules, reinforcing the radiation's longitudinal coherence, produced according to a Free Electron Laser (FEL) scheme by the interaction between the electron bunch and a light wave. The very high peak brilliance justifies their designation as fourth generation sources. The number of users is smaller because an electron pulse produces a radiation burst towards only one beamline. Energy Recovery Linacs (ERL) let the beam pass several times in the accelerator structures either to recover the energy or to accelerate the electrons during several turns

Synchrotron radiation A general overview and a review of storage rings, research facilities, and insertion devices

International Nuclear Information System (INIS)

Winick, H.

1989-01-01

Synchrotron radiation, the electromagnetic radiation given off by electrons in circular motion, is revolutionizing many branches of science and technology by offering beams of vacuum ultraviolet light and x rays of immense flux and brightness. In the past decade there has been an explosion of interest in these applications leading activity to construct new research facilities based on advanced storage rings and insertion device sources. Applications include basic and applied research in biology, chemistry, medicine, and physics plus many areas of technology. In this article we present a general overview of the field of synchrotron radiation research, its history, the present status and future prospects of storage rings and research facilities, and the development of wiggler and undulator insertion devices as sources of synchrotron radiation

Athermal and wavelength-trimmable photonic filters based on TiO₂-cladded amorphous-SOI.

Science.gov (United States)

Lipka, Timo; Moldenhauer, Lennart; Müller, Jörg; Trieu, Hoc Khiem

2015-07-27

Large-scale integrated silicon photonic circuits suffer from two inevitable issues that boost the overall power consumption. First, fabrication imperfections even on sub-nm scale result in spectral device non-uniformity that require fine-tuning during device operation. Second, the photonic devices need to be actively corrected to compensate thermal drifts. As a result significant amount of power is wasted if no athermal and wavelength-trimmable solutions are utilized. Consequently, in order to minimize the total power requirement of photonic circuits in a passive way, trimming methods are required to correct the device inhomogeneities from manufacturing and athermal solutions are essential to oppose temperature fluctuations of the passive/active components during run-time. We present an approach to fabricate CMOS backend-compatible and athermal passive photonic filters that can be corrected for fabrication inhomogeneities by UV-trimming based on low-loss amorphous-SOI waveguides with TiO2 cladding. The trimming of highly confined 10 μm ring resonators is proven over a free spectral range retaining athermal operation. The athermal functionality of 2nd-order 5 μm add/drop microrings is demonstrated over 40°C covering a broad wavelength interval of 60 nm.

Disposable photonic integrated circuits for evanescent wave sensors by ultra-high volume roll-to-roll method.

Science.gov (United States)

Aikio, Sanna; Hiltunen, Jussi; Hiitola-Keinänen, Johanna; Hiltunen, Marianne; Kontturi, Ville; Siitonen, Samuli; Puustinen, Jarkko; Karioja, Pentti

2016-02-08

Flexible photonic integrated circuit technology is an emerging field expanding the usage possibilities of photonics, particularly in sensor applications, by enabling the realization of conformable devices and introduction of new alternative production methods. Here, we demonstrate that disposable polymeric photonic integrated circuit devices can be produced in lengths of hundreds of meters by ultra-high volume roll-to-roll methods on a flexible carrier. Attenuation properties of hundreds of individual devices were measured confirming that waveguides with good and repeatable performance were fabricated. We also demonstrate the applicability of the devices for the evanescent wave sensing of ambient refractive index. The production of integrated photonic devices using ultra-high volume fabrication, in a similar manner as paper is produced, may inherently expand methods of manufacturing low-cost disposable photonic integrated circuits for a wide range of sensor applications.

High efficiency diffractive grating coupler based on transferred silicon nanomembrane overlay on photonic waveguide

Energy Technology Data Exchange (ETDEWEB)

Saha, Tapas Kumar; Zhou Weidong [University of Texas at Arlington, Department of Electrical Engineering, NanoFAB Center, Arlington, TX 76019-0072 (United States)

2009-04-21

We report here the design of a new type of high efficiency grating coupler, based on single crystalline Si nanomembrane overlay and stacking. Such high efficiency diffractive grating couplers are designed for the purpose of coupling light between single mode fibres and nanophotonic waveguides, and for the coupling between multiple photonic interconnect layers for compact three-dimensional vertical integration. Two-dimensional model simulation based on eigenmode expansion shows a diffractive power-up efficiency of 81% and a fibre coupling efficiency of 64%. With nanomembrane stacking, it is feasible to integrate the side-distributed Bragg reflector and bottom reflector, which can lead to the diffractive power-up efficiency and the fibre coupling efficiency of 97% and 73.5%, respectively. For a negatively detuned coupler, the bottom reflector is not needed, and the diffractive power-up efficiency can reach 98% over a large spectral range. The device is extremely tolerant to fabrication errors.

Pain from copper intrauterine device insertion: randomized trial of prophylactic ibuprofen.

Science.gov (United States)

Hubacher, David; Reyes, Veronica; Lillo, Sonia; Zepeda, Ana; Chen, Pai-Lien; Croxatto, Horacio

2006-11-01

This study was undertaken to determine whether 400 mg of prophylactic ibuprofen can alleviate pain from insertion of an intrauterine device (IUD) and to measure level of pain with improved techniques. We conducted a randomized, double-blind, placebo-controlled trial of 2019 first-time IUD users: 1008 women received placebo and 1011 women received 400 mg of ibuprofen. Participants took the single tablet at least 45 minutes before IUD insertion. Immediately after insertion, participants recorded level of pain by using a 10-cm visual analog scale, with the value of 10 meaning "worst imaginable pain." Median level of pain was 1.0 for both ibuprofen and placebo participants; rank test statistics confirmed no difference. Some subgroups of women experienced higher pain (eg, nulliparous women), but ibuprofen still had no important impact on level of pain. Even among first-time users, pain from IUD insertion is generally low. Prophylactic ibuprofen as used in this protocol does not reduce IUD insertion pain.

Optically reconfigurable metasurfaces and photonic devices based on phase change materials

Science.gov (United States)

Wang, Qian; Rogers, Edward T. F.; Gholipour, Behrad; Wang, Chih-Ming; Yuan, Guanghui; Teng, Jinghua; Zheludev, Nikolay I.

2016-01-01

Photonic components with adjustable parameters, such as variable-focal-length lenses or spectral filters, which can change functionality upon optical stimulation, could offer numerous useful applications. Tuning of such components is conventionally achieved by either micro- or nanomechanical actuation of their constituent parts, by stretching or by heating. Here, we report a novel approach for making reconfigurable optical components that are created with light in a non-volatile and reversible fashion. Such components are written, erased and rewritten as two-dimensional binary or greyscale patterns into a nanoscale film of phase-change material by inducing a refractive-index-changing phase transition with tailored trains of femtosecond pulses. We combine germanium-antimony-tellurium-based films with a diffraction-limited resolution optical writing process to demonstrate a variety of devices: visible-range reconfigurable bichromatic and multi-focus Fresnel zone plates, a super-oscillatory lens with subwavelength focus, a greyscale hologram, and a dielectric metamaterial with on-demand reflection and transmission resonances.

Insertion Device Upgrade Plans at the NSLS

CERN Document Server

Tanabe, Toshiya; Harder, David; Lehecka, Michael; Rakowsky, George; Skaritka, John

2005-01-01

This paper describes plans to upgrade insertion devices at the National Synchrotron Light Source (NSLS), Brookhaven National Laboratory, U.S.A. The aging wiggler (W80) at X25 is being replaced by a 1 m long in-vacuum mini-gap undulator (MGU-18) optimized for a dedicated macromolecular crystallography program. A new, 1/3 m long, in-vacuum undulator (MGU-13.5), will be installed between a pair of RF cavities at X9, and will serve a new beamline dedicated for small angle x-ray scattering (SAXS). Both MGU’s will have provision for cryocooling the NdFeB hybrid arrays to 150K to raise the field and K-value and to obtain better spectral coverage. Design issues of the devices and other considerations, especially magnetic measurement methods in low temperature will be discussed.

Development of a Watt-level gamma-ray source based on high-repetition-rate inverse Compton scattering

Energy Technology Data Exchange (ETDEWEB)

Mihalcea, D.; Murokh, A.; Piot, P.; Ruan, J.

2017-07-01

A high-brilliance (~10²² photon s^-1 mm^-2 mrad^-2 /0.1%) gamma-ray source experiment is currently being planned at Fermilab (E_γ≃1.1 MeV). The source implements a high-repetition-rate inverse Compton scattering by colliding electron bunches formed in a ~300-MeV superconducting linac with a high-intensity laser pulse. This paper describes the design rationale along with some of technical challenges associated to producing high-repetition-rate collision. The expected performances of the gamma-ray source are also presented.

Ultra-High Capacity Silicon Photonic Interconnects through Spatial Multiplexing

Science.gov (United States)

Chen, Christine P.

-fabrication. Through ModePROP simulations, optimizing device performance dynamically post-fabrication is analyzed, through either electro-optical or thermo-optical means. By biasing the arm introducing the slight spectral offset, we can quantifiably improve device performance. Scaling bandwidth is experimentally demonstrated through the device at 3 modes, 2 wavelengths, and 40 Gb/s data rate for 240 Gb/s aggregate bandwidth, with the potential to reduce power penalty per the device optimization process we described. A main motivation for this on-chip spatial multiplexing is the need to reduce costs. As the laser source serves as the greatest power consumer in an optical system, mode-division multiplexing and other forms of spatial multiplexing can be implemented to push its potentially prohibitive cost metrics down. In order to demonstrate an intelligent platform capable of dynamically multicasting data and reallocating power as needed by the system, we must first initialize the switch fabric to control with an electronic interface. A dithering mechanism, whereby exact cross, bar, and sub-percentage states are enforced through the device, is described here. Such a method could be employed for actuating the device table of bias values to states automatically. We then employ a dynamic power reallocation algorithm through a data acquisition unit, showing real-time channel recovery for channels experiencing power loss by diverting power from paths that could tolerate it. The data that is being multicast through the system is experimentally shown to be error-free at 40 Gb/s data rate, when transmitting from one to three clients and going from automatic bar/cross states to equalized power distribution. For the last portion of this topic, the switch fabric was inserted into a high-performance computing system. In order to run benchmarks at 10 Gb/s data ontop of the switch fabric, a newer model of the control plane was implemented to toggle states according to the command issued by the server

Overview of the advanced photon source

International Nuclear Information System (INIS)

Moncton, D.E.; Crosbie, E.; Shenoy, G.K.

1989-01-01

The Advanced Photon Source planned for construction at Argonne National Laboratory is based on a low-emittance storage-ring operated at 7 GeV and capable of providing tunable undulator radiation from 4 to 40 keV (using the first and the third harmonics). A technical description of the accelerator facility and the storage ring is presented in this overview, along with a brief summary of the characteristics of radiation that will be available from the insertion devices. Various plans for user access to this national user facility are also given

Injector system design of the 8 GeV synchrotron radiation facility (SPring-8)

International Nuclear Information System (INIS)

Harami, T.; Yokomizo, H.; Ohtsuka, H.

1990-01-01

The 8 GeV synchrotron radiation facility, named SPring-8, which will be constructed at Nishi-harima in Hyogo-ken, is designed jointly by JAERI (Japan Atomic Energy Research Institute and RIKEN (Institute of Physical and Chemical Research) under the supervision of Science and Technology Agency (STA) of the Japanese government. The facility provides photon in the X-ray and hard X-ray domains with high flux and high brilliance. The major characteristics of the storage ring are the low emittance and the large number of straight sections. Combining the low emittance beam with long insertion devices, several orders of magnitude improvement in intensity and brightness are expected. The injector system of SPring-8 is composed of a linac and a synchrotron. Not only electrons but positrons can be accelerated by the linac. These particles are injected into the synchrotron and further accelerated to 8 GeV. (N.K.)

Study of low insertion loss and miniaturization wavelet transform and inverse transform processor using SAW devices.

Science.gov (United States)

Jiang, Hua; Lu, Wenke; Zhang, Guoan

2013-07-01

In this paper, we propose a low insertion loss and miniaturization wavelet transform and inverse transform processor using surface acoustic wave (SAW) devices. The new SAW wavelet transform devices (WTDs) use the structure with two electrode-widths-controlled (EWC) single phase unidirectional transducers (SPUDT-SPUDT). This structure consists of the input withdrawal weighting interdigital transducer (IDT) and the output overlap weighting IDT. Three experimental devices for different scales 2(-1), 2(-2), and 2(-3) are designed and measured. The minimum insertion loss of the three devices reaches 5.49dB, 4.81dB, and 5.38dB respectively which are lower than the early results. Both the electrode width and the number of electrode pairs are reduced, thus making the three devices much smaller than the early devices. Therefore, the method described in this paper is suitable for implementing an arbitrary multi-scale low insertion loss and miniaturization wavelet transform and inverse transform processor using SAW devices. Copyright © 2013 Elsevier B.V. All rights reserved.

Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators

Energy Technology Data Exchange (ETDEWEB)

Bader, Christina A.; Zeuner, Franziska; Bader, Manuel H. W.; Zentgraf, Thomas; Meier, Cedrik [Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), Universität Paderborn, Warburger Str. 100, 33098 Paderborn (Germany)

2015-12-07

Zinc oxide (ZnO) is a versatile candidate for photonic devices due to its highly efficient optical emission. However, for pumping of ZnO photonic devices UV-sources are required. Here, we investigate the alternative usage of widely available pulsed near-infrared (NIR)-sources and compare the efficiency of linear and nonlinear excitation processes. We found that bulk ZnO, ZnO thin films grown by molecular beam epitaxy, and ZnO/SiO{sub 2} microdisk devices exhibit strong nonlinear response when excited with NIR pulses (λ ≈ 1060 nm). In addition, we show that the ZnO/SiO{sub 2} microdisks exhibit sharp whispering gallery modes over the blue-yellow part of the visible spectrum for both excitation conditions and high Q-factors up to Q = 4700. The results demonstrate that nonlinear excitation is an efficient way to pump ZnO photonic devices.

Cermet insert high voltage holdoff improvement for ceramic/metal vacuum devices

Science.gov (United States)

Ierna, W.F.

1986-03-11

An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

Hybrid Photonic Integration on a Polymer Platform

Directory of Open Access Journals (Sweden)

Ziyang Zhang

2015-09-01

Full Text Available To fulfill the functionality demands from the fast developing optical networks, a hybrid integration approach allows for combining the advantages of various material platforms. We have established a polymer-based hybrid integration platform (polyboard, which provides flexible optical input/ouptut interfaces (I/Os that allow robust coupling of indium phosphide (InP-based active components, passive insertion of thin-film-based optical elements, and on-chip attachment of optical fibers. This work reviews the recent progress of our polyboard platform. On the fundamental level, multi-core waveguides and polymer/silicon nitride heterogeneous waveguides have been fabricated, broadening device design possibilities and enabling 3D photonic integration. Furthermore, 40-channel optical line terminals and compact, bi-directional optical network units have been developed as highly functional, low-cost devices for the wavelength division multiplexed passive optical network. On a larger scale, thermo-optic elements, thin-film elements and an InP gain chip have been integrated on the polyboard to realize a colorless, dual-polarization optical 90° hybrid as the frontend of a coherent receiver. For high-end applications, a wavelength tunable 100Gbaud transmitter module has been demonstrated, manifesting the joint contribution from the polyboard technology, high speed polymer electro-optic modulator, InP driver electronics and ceramic electronic interconnects.

Type testing of devices with inserted radioactive sources

International Nuclear Information System (INIS)

Rolle, A.; Droste, B.; Dombrowski, H.

2006-01-01

In Germany devices with inserted radioactive sources can get a type approval if they comply with specific requirements. Whoever operates a device whose type has been approved in accordance with the German Radiation Protection Ordinance does not need an individual authorization. Such type approvals for free use are granted by the Federal Office for Radiation Protection (B.f.S.) on the basis of type testing performed by the Physikalisch-Technische Bundesanstalt (P.T.B.), the national metrology institute, and the Bundesanstalt fur Materialforschung und -prufung (B.A.M.), the Federal Institute for Materials Research and Testing. Main aspects of the assessment are the activity of the radioactive sources, the dose equivalent rate near the devices, the tamper-proofness and leak-tightness of the sources and the safety of the construction of the devices. With the new Radiation Protection Ordinance in 2001, more stringent requirements for a type approval were established. Experiences with the new regulations and the relevant assessment criteria applied by P.T.B. and B.A.M. will be presented. (authors)

Continuous-variable measurement-device-independent quantum key distribution with photon subtraction

Science.gov (United States)

Ma, Hong-Xin; Huang, Peng; Bai, Dong-Yun; Wang, Shi-Yu; Bao, Wan-Su; Zeng, Gui-Hua

2018-04-01

It has been found that non-Gaussian operations can be applied to increase and distill entanglement between Gaussian entangled states. We show the successful use of the non-Gaussian operation, in particular, photon subtraction operation, on the continuous-variable measurement-device-independent quantum key distribution (CV-MDI-QKD) protocol. The proposed method can be implemented based on existing technologies. Security analysis shows that the photon subtraction operation can remarkably increase the maximal transmission distance of the CV-MDI-QKD protocol, which precisely make up for the shortcoming of the original CV-MDI-QKD protocol, and one-photon subtraction operation has the best performance. Moreover, the proposed protocol provides a feasible method for the experimental implementation of the CV-MDI-QKD protocol.

Photon and neutron doses of the personnel using moisture and density measurement devices

Energy Technology Data Exchange (ETDEWEB)

Carinou, E.; Papadomarkaki, E.; Tritakis, P.; Hourdakis, C.I.; Kamenopoulou, V. [Greek Atomic Energy Commission, Agia Paraskevi, Attiki, 60092 (Greece)

2006-07-01

The objective of this study is to present the evolution of the photon doses received by the workers who use mobile devices for measuring the moisture and the density in various materials and to estimate the neutron doses. The workers employed in more than 30 construction companies in Greece were 76 in 2004. The devices used for that purpose incorporate a {sup 137}Cs source for density measurements and an {sup 241}Am-Be source for moisture measurements of soil, asphalt or concrete. Photon and neutron measurements were performed occasionally during the on site inspections. The results of the measurements showed that the photon and neutron dose rates were not negligible. The workers were monitored for photon radiation using film badges (Kodak Type 2, Holder NRPB type) till the year 2000 and then TLD badges issued by the Greek Atomic Energy Commission (GAEC), on a monthly basis. Since the neutron dose rates measured by a rem-meter were not so high, no neutron dosemeters were issued for them. Their personal dose equivalent data for photons are kept in the National Dose Registry Information System (N.D.R.I.S.) in G.A.E.C. and were used for statistical analysis for the period from 1997 till 2004. As far as the neutrons are concerned, a Monte Carlo code was used to simulate the measuring devices and the working positions in order to calculate the neutron individual doses. (authors)

Photon and neutron doses of the personnel using moisture and density measurement devices

International Nuclear Information System (INIS)

Carinou, E.; Papadomarkaki, E.; Tritakis, P.; Hourdakis, C.I.; Kamenopoulou, V.

2006-01-01

The objective of this study is to present the evolution of the photon doses received by the workers who use mobile devices for measuring the moisture and the density in various materials and to estimate the neutron doses. The workers employed in more than 30 construction companies in Greece were 76 in 2004. The devices used for that purpose incorporate a 137 Cs source for density measurements and an 241 Am-Be source for moisture measurements of soil, asphalt or concrete. Photon and neutron measurements were performed occasionally during the on site inspections. The results of the measurements showed that the photon and neutron dose rates were not negligible. The workers were monitored for photon radiation using film badges (Kodak Type 2, Holder NRPB type) till the year 2000 and then TLD badges issued by the Greek Atomic Energy Commission (GAEC), on a monthly basis. Since the neutron dose rates measured by a rem-meter were not so high, no neutron dosemeters were issued for them. Their personal dose equivalent data for photons are kept in the National Dose Registry Information System (N.D.R.I.S.) in G.A.E.C. and were used for statistical analysis for the period from 1997 till 2004. As far as the neutrons are concerned, a Monte Carlo code was used to simulate the measuring devices and the working positions in order to calculate the neutron individual doses. (authors)

Radiological assessment of placement of the hysteroscopically inserted Essure permanent birth control device.

Science.gov (United States)

Lorente Ramos, R M; Azpeitia Armán, J; Aparicio Rodríguez-Miñón, P; Salazar Arquero, F J; Albillos Merino, J C

2015-01-01

Essure is a permanent birth control device that is inserted through the cervix by hysteroscopy. The device is placed in the fallopian tubes, where it causes occlusion by stimulating fibrosis. Patients can be followed up with plain-film X-rays, hysterosalpingography, and ultrasonography, although the devices can also be identified incidentally on CT and MRI. The follow-up of Essure is based on checking the criteria for appropriate positioning and correct functioning (tubal occlusion) and on diagnosing complications. The most common complications are perforation, migration (toward the uterine or peritoneal cavity), and occlusion failure. In hysterosalpingography, vascular intravasation is the most common cause of diagnostic error. Radiologists need to know how to recognize the device on different imaging techniques, how to check that it is correctly placed and functioning, and how to diagnose complications. Copyright © 2014 SERAM. Published by Elsevier España, S.L.U. All rights reserved.

Integrated reconfigurable photonic filters based on interferometric fractional Hilbert transforms.

Science.gov (United States)

Sima, C; Cai, B; Liu, B; Gao, Y; Yu, Y; Gates, J C; Zervas, M N; Smith, P G R; Liu, D

2017-10-01

In this paper, we present integrated reconfigurable photonic filters using fractional Hilbert transformers (FrHTs) and optical phase tuning structure within the silica-on-silicon platform. The proposed structure, including grating-based FrHTs, an X-coupler, and a pair of thermal tuning filaments, is fabricated through the direct UV grating writing technique. The thermal tuning effect is realized by the controllable microheaters located on the two arms of the X-coupler. We investigate the 200 GHz maximum bandwidth photonic FrHTs based on apodized planar Bragg gratings, and analyze the reflection spectrum responses. Through device integration and thermal modulation, the device could operate as photonic notch filters with 5 GHz linewidth and controllable single sideband suppression filters with measured 12 dB suppression ratio. A 50 GHz instantaneous frequency measuring system using this device is also schematically proposed and analyzed with potential 3 dB measurement improvement. The device could be configured with these multiple functions according to need. The reconfigurable structure has great potential in ultrafast all-optical signal processing fields.

Few-photon Non-linearities in Nanophotonic Devices for Quantum Information Technology

DEFF Research Database (Denmark)

Nysteen, Anders

In this thesis we investigate few-photon non-linearities in all-optical, on-chip circuits, and we discuss their possible applications in devices of interest for quantum information technology, such as conditional two-photon gates and single-photon sources. In order to propose efficient devices...... the scattered photons. Even though the non-linearity also alters the pulse spectrum due to a four-wave mixing process, we demonstrate that input pulses with a Gaussian spectrum can be mapped to the output with up to 80 % fidelity. Using two identical two-level emitters, we propose a setup for a deterministic...... by the capturing process. Semiconductor quantum dots (QDs) are promising for realizing few-photon non-linearities in solid-state implementations, although coupling to phonon modes in the surrounding lattice have significant influence on the dynamics. By accounting for the commonly neglected asymmetry between...

Packaged mode multiplexer based on silicon photonics

NARCIS (Netherlands)

Chen, H.; Koonen, A.M.J.; Snyder, B.; Raz, O.; Boom, van den H.P.A.; Chen, X.

2012-01-01

A silicon photonics based mode multiplexer is proposed. Four chirped grating couplers structure can support all 6 channels in a two-mode fiber and realize LP01 and LP11 mode selective exciting. The packaged device is tested.

Optimizing performance of plasmonic devices for photonic circuits

DEFF Research Database (Denmark)

Rosenzveig, Tiberiu; Hermannsson, Pétur Gordon; Boltasseva, Alexandra

2010-01-01

specifications similar to or better than commercially available thermo-optic integrated optical components. Specifically, we have considered the insertion loss, power consumption, footprint, polarization-dependent loss, extinction ratio, and frequency response of the plasmonic devices, in addition to fabrication...

Photon Factory activity report, 1990

International Nuclear Information System (INIS)

1991-01-01

The Photon Factory has grown at a considerable rate, and 600 experiments are carried out in 1991, while the number of users is now 2300 including about 500 from industrial sectors. The use of synchrotron radiation increased from fundamental research to industrial development. The development at the Photon Factory is supported by the capability of the accelerators. At present, the 2.5 GeV PF ring is operated with positrons at the initial beam current of 350 mA. The total operation time was 3500 hours in the fiscal year 1990. The development of an avalanche mode photodiode, the observation of quantum beat in the experiment of nuclear Bragg scattering, the measurement of photo-electron and photo-ion spectroscopy were carried out. The conversion of TRISTAN main ring to an ultrahigh brilliance and high coherence source is planned for the future. The annual PF Symposium was held, and Professor H. Winick gave the lecture 'Ultrahigh brightness and coherent radiation from large storage rings'. In this report, the outline of the Photon Factory and the activities in Divisions of Injector Linac, Light Source and Instrumentation are described. (K.I.)

High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

DEFF Research Database (Denmark)

Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

2017-01-01

is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

Characterization of Chemical Vapor Deposited Tetraethyl Orthosilicate based SiO2 Films for Photonic Devices

Directory of Open Access Journals (Sweden)

Jhansirani KOTCHARLAKOTA

2016-05-01

Full Text Available Silicon has been the choice for photonics technology because of its cost, compatibility with mass production and availability. Silicon based photonic devices are very significant from commercial point of view and are much compatible with established technology. This paper deals with deposition and characterization of SiO2 films prepared by indigenously developed chemical vapor deposition system. Ellipsometry study of prepared films showed an increase in refractive index and film thickness with the increment in deposition temperature. The deposition temperature has a significant role for stoichiometric SiO2 films, FTIR measurement has shown the three characteristics peaks of Si-O-Si through three samples prepared at temperatures 700, 750 and 800 °C while Si-O-Si stretching peak positions were observed to be shifted to lower wavenumber in accordance to the temperature. FESEM analysis has confirmed the smooth surface without any crack or disorder while EDX analysis showed the corresponding peaks of compositional SiO2 films.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7245

Organic printed photonics: From microring lasers to integrated circuits.

Science.gov (United States)

Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

2015-09-01

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 10(5), which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

Research on SOI-based micro-resonator devices

Science.gov (United States)

Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

2010-10-01

SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of 10 Gbit/s high speed microring modulators.

Reorientation simplified: A device for recording and reproducing the path of insertion for removable partial dentures

Directory of Open Access Journals (Sweden)

Vaibhav D Kamble

2014-01-01

Full Text Available Aim: The record of path of insertion on the dental cast is part of the dentist′s work authorization to the dental laboratory technician. The path of insertion record enables the dental technician to replace the cast on a surveyor in the same position that the dentist selected. Analysis of factors that influence the path of insertion should determine a path of insertion that will reduce the potential for dislodgement and promote stability of removable partial denture (RPD. Materials and Methods: The recording of the relation of a cast to a dental surveyor and the transfer of this relationship to the dental laboratory may be done by tripodization, by scoring the base of the cast, or by cementing a reference pin on the cast. Conclusion: Recording the established path of insertion can be difficult when the procedure uses a cemented pin and the casts are mounted in an articulator. This article describes a procedure for innovative dowel pin and sleeve device to record the path of insertion of RPDs, which serves the same purpose as the cemented pin but can be easily removed and replaced.

Investigation of 2D photonic crystal structure based channel drop filter using quad shaped photonic crystal ring resonator for CWDM system

Energy Technology Data Exchange (ETDEWEB)

Chhipa, Mayur Kumar, E-mail: mayurchhipa1@gmail.com; Dusad, Lalit Kumar [Government Engineering College Ajmer, Rajasthan (India); Rajasthan Technical University, Kota, Rajasthan (India)

2016-05-06

In this paper, the design & performance of two dimensional (2-D) photonic crystal structure based channel drop filter is investigated using quad shaped photonic crystal ring resonator. In this paper, Photonic Crystal (PhC) based on square lattice periodic arrays of Gallium Indium Phosphide (GaInP) rods in air structure have been investigated using Finite Difference Time Domain (FDTD) method and photonic band gap is being calculated using Plane Wave Expansion (PWE) method. The PhC designs have been optimized for telecommunication wavelength λ= 1571 nm by varying the rods lattice constant. The number of rods in Z and X directions is 21 and 20, with lattice constant 0.540 nm it illustrates that the arrangement of Gallium Indium Phosphide (GaInP) rods in the structure which gives the overall size of the device around 11.4 µm × 10.8 µm. The designed filter gives good dropping efficiency using 3.298, refractive index. The designed structure is useful for CWDM systems. This device may serve as a key component in photonic integrated circuits. The device is ultra compact with the overall size around 123 µm{sup 2}.

A versatile source of polarization entangled photons for quantum network applications

International Nuclear Information System (INIS)

Kaiser, Florian; Issautier, Amandine; Ngah, Lutfi A; Alibart, Olivier; Martin, Anthony; Tanzilli, Sébastien

2013-01-01

We report a versatile and practical approach for the generation of high-quality polarization entanglement in a fully guided-wave fashion. Our setup relies on a high-brilliance type-0 waveguide generator producing paired photons at a telecom wavelength associated with an advanced energy-time to polarization transcriber. The latter is capable of creating any pure polarization entangled state, and allows manipulation of single-photon bandwidths that can be chosen at will over five orders of magnitude, ranging from tens of MHz to several THz. We achieve excellent entanglement fidelities for particular spectral bandwidths, i.e. 25 MHz, 540 MHz and 80 GHz, proving the relevance of our approach. Our scheme stands as an ideal candidate for a wide range of network applications, ranging from dense division multiplexing quantum key distribution to heralded optical quantum memories and repeaters. (letter)

The first insertion devices at SSRL - some personal recollections

Energy Technology Data Exchange (ETDEWEB)

Winick, H. [Stanford Linear Accelerator Center, CA (United States)

1995-02-01

The author recounts his experiences with insertion devices at the Stanford Synchrotron Radiation Laboratory. His first experiences with wigglers occured at the Cambridge Electron Accelerator, and was carried over to SSRL with the proposal for a six pole electromagnetic wiggler. Most modern undulators, and many wigglers are now designed around permanent magnets, and the origin of this transition at SSRL was rather fortuitous and humorous. It reflects some of the personality characteristics of Klaus Halbach.

Photon-photon scattering at the high-intensity frontier

Science.gov (United States)

Gies, Holger; Karbstein, Felix; Kohlfürst, Christian; Seegert, Nico

2018-04-01

The tremendous progress in high-intensity laser technology and the establishment of dedicated high-field laboratories in recent years have paved the way towards a first observation of quantum vacuum nonlinearities at the high-intensity frontier. We advocate a particularly prospective scenario, where three synchronized high-intensity laser pulses are brought into collision, giving rise to signal photons, whose frequency and propagation direction differ from the driving laser pulses, thus providing various means to achieve an excellent signal to background separation. Based on the theoretical concept of vacuum emission, we employ an efficient numerical algorithm which allows us to model the collision of focused high-intensity laser pulses in unprecedented detail. We provide accurate predictions for the numbers of signal photons accessible in experiment. Our study is the first to predict the precise angular spread of the signal photons, and paves the way for a first verification of quantum vacuum nonlinearity in a well-controlled laboratory experiment at one of the many high-intensity laser facilities currently coming online.

Photonic integration and photonics-electronics convergence on silicon platform

CERN Document Server

Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

2015-01-01

Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

Bright perspectives for nuclear photonics

Science.gov (United States)

Thirolf, P. G.; Habs, D.

2014-05-01

With the advent of new high-power, short-pulse laser facilities in combination with novel technologies for the production of highly brilliant, intense γ beams (like, e.g., Extreme Light Infrastructure - Nuclear Physics (ELI-NP) in Bucharest, MEGaRay in Livermore or a planned upgrade of the HIγS facility at Duke University), unprecedented perspectives will open up in the coming years for photonuclear physics both in basic sciences as in various fields of applications. Ultra-high sensitivity will be enabled by an envisaged increase of the γ-beam spectral density from the presently typical 102γ/eVs to about 104γ/eVs, thus enabling a new quality of nuclear photonics [1], assisted by new γ-optical elements [2]. Photonuclear reactions with highly brilliant γ beams will allow to produce radioisotopes for nuclear medicine with much higher specific activity and/or more economically than with conventional methods. This will open the door for completely new clinical applications of radioisotopes [3]. The isotopic, state-selective sensitivity of the well-established technique of nuclear resonance fluorescence (NRF) will be boosted by the drastically reduced energy bandwidth (tomography and microscopy, assisting the management of nuclear materials, such as radioactive waste management, the detection of nuclear fissile material in the recycling process or the detection of clandestine fissile materials. Moreover, also secondary sources like low-energy, pulsed, polarized neutron beams of high intensity and high brilliance [4] or a new type of positron source with significantly increased brilliance, for the first time fully polarized [5], can be realized and lead to new applications in solid state physics or material sciences.

InP-based three-dimensional photonic integrated circuits

Science.gov (United States)

Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure

Cryogenic refrigeration requirements for superconducting insertion devices in a light source

International Nuclear Information System (INIS)

Green, Michael A.; Green, Michael A.; Green, Michael A.

2003-01-01

This report discusses cryogenic cooling superconducting insertion devices for modern light sources. The introductory part of the report discusses the difference between wiggler and undulators and how the bore temperature may affect the performance of the magnets. The steps one would take to reduce the gap between the cold magnet pole are discussed. One section of the report is devoted to showing how one would calculate the heat that enters the device. Source of heat include, heat entering through the vacuum chamber, heating due to stray electrons and synchrotron radiation, heating due to image current on the bore, heat flow by conduction and radiation, and heat transfer into the cryostat through the magnet leads. A section of the report is devoted to cooling options such as small cryo-cooler and larger conventional helium refrigerators. This section contains a discussion as to when it is appropriate to use small coolers that do not have J-T circuits. Candidate small cryo-coolers are discussed in this section of the report. Cooling circuits for cooling with a conventional refrigerator are also discussed. A section of the report is devoted to vibration isolation and how this may affect how the cooling is attached to the device. Vibration isolation using straps is compared to vibration isolation using helium heat pipes. The vibration isolation of a conventional refrigeration system is also discussed. Finally, the cool down of an insertion device is discussed. The device can either be cooled down using liquid cryogenic nitrogen and liquid helium or by using the cooler used to keep the devices cold over the long haul

Analytical description of photon beam phase spaces in inverse Compton scattering sources

Directory of Open Access Journals (Sweden)

C. Curatolo

2017-08-01

Full Text Available We revisit the description of inverse Compton scattering sources and the photon beams generated therein, emphasizing the behavior of their phase space density distributions and how they depend upon those of the two colliding beams of electrons and photons. The main objective is to provide practical formulas for bandwidth, spectral density, brilliance, which are valid in general for any value of the recoil factor, i.e. both in the Thomson regime of negligible electron recoil, and in the deep Compton recoil dominated region, which is of interest for gamma-gamma colliders and Compton sources for the production of multi-GeV photon beams. We adopt a description based on the center of mass reference system of the electron-photon collision, in order to underline the role of the electron recoil and how it controls the relativistic Doppler/boost effect in various regimes. Using the center of mass reference frame greatly simplifies the treatment, allowing us to derive simple formulas expressed in terms of rms momenta of the two colliding beams (emittance, energy spread, etc. and the collimation angle in the laboratory system. Comparisons with Monte Carlo simulations of inverse Compton scattering in various scenarios are presented, showing very good agreement with the analytical formulas: in particular we find that the bandwidth dependence on the electron beam emittance, of paramount importance in Thomson regime, as it limits the amount of focusing imparted to the electron beam, becomes much less sensitive in deep Compton regime, allowing a stronger focusing of the electron beam to enhance luminosity without loss of mono-chromaticity. A similar effect occurs concerning the bandwidth dependence on the frequency spread of the incident photons: in deep recoil regime the bandwidth comes out to be much less dependent on the frequency spread. The set of formulas here derived are very helpful in designing inverse Compton sources in diverse regimes, giving a

Twin photon pairs in a high-Q silicon microresonator

Energy Technology Data Exchange (ETDEWEB)

Rogers, Steven; Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Jiang, Wei C. [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States)

2015-07-27

We report the generation of high-purity twin photon pairs through cavity-enhanced non-degenerate four-wave mixing (FWM) in a high-Q silicon microdisk resonator. Twin photon pairs are created within the same cavity mode and are consequently expected to be identical in all degrees of freedom. The device is able to produce twin photons at telecommunication wavelengths with a pair generation rate as large as (3.96 ± 0.03) × 10{sup 5} pairs/s, within a narrow bandwidth of 0.72 GHz. A coincidence-to-accidental ratio of 660 ± 62 was measured, the highest value reported to date for twin photon pairs, at a pair generation rate of (2.47 ± 0.04) × 10{sup 4} pairs/s. Through careful engineering of the dispersion matching window, we have reduced the ratio of photons resulting from degenerate FWM to non-degenerate FWM to less than 0.15.

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

Science.gov (United States)

Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

2017-05-01

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

Photonics in Environment and Energy. A technology roadmap for SMEs on new photonic devices and materials

Energy Technology Data Exchange (ETDEWEB)

Loeffler, Jonathan; Salingre, Anthony; Vitale, David; Yatsunenko, Sergey; Lojkowski, Witold

2012-11-01

Scientific and technological developments in photonics will have a major influence on lots of industries over the next ten to fifteen years. In this highly evolving field, the long-term competitiveness of companies, and especially of Small and Medium sized Enterprises (SMEs), mainly depends on their ability to offer a good product and to establish a successful market position, which is well connected to the management of the hidden potential in existing technological capabilities. Technology roadmaps are interesting tools used to portray the structural and temporal relationships among science, technology and applications and thus help in the decision-making process to remain successful on the market. The present roadmap aims at identifying technological trends for new photonic devices and nanophotonic materials, mainly in terms of market development. It has the main objective to inform SMEs about new scientific discoveries and developments in photonics and their related problem-solving potential for future products and applications in the Environment and Energy sector. This roadmap is part of a set of four roadmaps about the use of photonic technologies in the industrial sectors of ICT, Heath and Well-being, Environment and Energy and Safety and Security. They were developed in the course of the European project PhotonicRoadSME. Altogether, these roadmaps will contribute to support SMEs in their strategic planning for future applications and products.

Switchable Photonic Crystals Using One-Dimensional Confined Liquid Crystals for Photonic Device Application.

Science.gov (United States)

Ryu, Seong Ho; Gim, Min-Jun; Lee, Wonsuk; Choi, Suk-Won; Yoon, Dong Ki

2017-01-25

Photonic crystals (PCs) have recently attracted considerable attention, with much effort devoted to photonic bandgap (PBG) control for varying the reflected color. Here, fabrication of a modulated one-dimensional (1D) anodic aluminum oxide (AAO) PC with a periodic porous structure is reported. The PBG of the fabricated PC can be reversibly changed by switching the ultraviolet (UV) light on/off. The AAO nanopores contain a mixture of photoresponsive liquid crystals (LCs) with irradiation-activated cis/trans photoisomerizable azobenzene. The resultant mixture of LCs in the porous AAO film exhibits a reversible PBG, depending on the cis/trans configuration of azobenzene molecules. The PBG switching is reliable over many cycles, suggesting that the fabricated device can be used in optical and photonic applications such as light modulators, smart windows, and sensors.

Next-Generation Photon Sources for Grand Challenges in Science and Energy

Energy Technology Data Exchange (ETDEWEB)

None

2009-05-01

The next generation of sustainable energy technologies will revolve around transformational new materials and chemical processes that convert energy efficiently among photons, electrons, and chemical bonds. New materials that tap sunlight, store electricity, or make fuel from splitting water or recycling carbon dioxide will need to be much smarter and more functional than today's commodity-based energy materials. To control and catalyze chemical reactions or to convert a solar photon to an electron requires coordination of multiple steps, each carried out by customized materials and interfaces with designed nanoscale structures. Such advanced materials are not found in nature the way we find fossil fuels; they must be designed and fabricated to exacting standards, using principles revealed by basic science. Success in this endeavor requires probing, and ultimately controlling, the interactions among photons, electrons, and chemical bonds on their natural length and time scales. Control science - the application of knowledge at the frontier of science to control phenomena and create new functionality - realized through the next generation of ultraviolet and X-ray photon sources, has the potential to be transformational for the life sciences and information technology, as well as for sustainable energy. Current synchrotron-based light sources have revolutionized macromolecular crystallography. The insights thus obtained are largely in the domain of static structure. The opportunity is for next generation light sources to extend these insights to the control of dynamic phenomena through ultrafast pump-probe experiments, time-resolved coherent imaging, and high-resolution spectroscopic imaging. Similarly, control of spin and charge degrees of freedom in complex functional materials has the potential not only to reveal the fundamental mechanisms of high-temperature superconductivity, but also to lay the foundation for future generations of information science. This

Carbon Based Transistors and Nanoelectronic Devices

Science.gov (United States)

Rouhi, Nima

Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

Preliminary study of insertion device effect on dynamic aperture using RACETRACK

International Nuclear Information System (INIS)

Chae, Yong-chul; Crosbie, E.A.

1992-01-01

We studied the effects of an insertion device (ID) on the dynamic aperture using the new version of RACETRACK. We found that the nonlinear effect of the ID is the dominant effect on the dynamic aperture reduction compared to the other multipole errors which exist in the otherwise ideal lattice. The previous study of dynamic aperture was based on the assumption that the effect of the fast oscillating terms in L. Smith's Hamiltonian is small, and hence can be neglected in the simulation. The remarkable agreement between the previous study and the current results using RACETRACK, including all effects of the fast oscillating terms, justified those assumptions at least for the APS ring

Integrated Optical Mach-Zehnder Interferometer Based on Organic-Inorganic Hybrids for Photonics-on-a-Chip Biosensing Applications.

Science.gov (United States)

Bastos, Ana R; Vicente, Carlos M S; Oliveira-Silva, Rui; Silva, Nuno J O; Tacão, Marta; Costa, João P da; Lima, Mário; André, Paulo S; Ferreira, Rute A S

2018-03-12

The development of portable low-cost integrated optics-based biosensors for photonics-on-a-chip devices for real-time diagnosis are of great interest, offering significant advantages over current analytical methods. We report the fabrication and characterization of an optical sensor based on a Mach-Zehnder interferometer to monitor the growing concentration of bacteria in a liquid medium. The device pattern was imprinted on transparent self-patternable organic-inorganic di-ureasil hybrid films by direct UV-laser, reducing the complexity and cost production compared with lithographic techniques or three-dimensional (3D) patterning using femtosecond lasers. The sensor performance was evaluated using, as an illustrative example, E. coli cell growth in an aqueous medium. The measured sensitivity (2 × 10 -4 RIU) and limit of detection (LOD = 2 × 10 -4 ) are among the best values known for low-refractive index contrast sensors. Furthermore, the di-ureasil hybrid used to produce this biosensor has additional advantages, such as mechanical flexibility, thermal stability, and low insertion losses due to fiber-device refractive index mismatch (~1.49). Therefore, the proposed sensor constitutes a direct, compact, fast, and cost-effective solution for monitoring the concentration of lived-cells.

InP-based photonic integrated circuit platform on SiC wafer.

Science.gov (United States)

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

Experimental Greenberger-Horne-Zeilinger-Type Six-Photon Quantum Nonlocality.

Science.gov (United States)

Zhang, Chao; Huang, Yun-Feng; Wang, Zhao; Liu, Bi-Heng; Li, Chuan-Feng; Guo, Guang-Can

2015-12-31

Quantum nonlocality gives us deeper insight into quantum physics. In addition, quantum nonlocality has been further recognized as an essential resource for device-independent quantum information processing in recent years. Most experiments of nonlocality are performed using a photonic system. However, until now, photonic experiments of nonlocality have involved at most four photons. Here, for the first time, we experimentally demonstrate the six-photon quantum nonlocality in an all-versus-nothing manner based on a high-fidelity (88.4%) six-photon Greenberger-Horne-Zeilinger state. Our experiment pushes multiphoton nonlocality studies forward to the six-photon region and might provide a larger photonic system for device-independent quantum information protocols.

Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

Science.gov (United States)

Jeannin, Mathieu; Cremel, Thibault; Häyrynen, Teppo; Gregersen, Niels; Bellet-Amalric, Edith; Nogues, Gilles; Kheng, Kuntheak

2017-11-01

Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach to fabricate a photonic fiberlike structure around such nanowire quantum dots by depositing an oxide shell using atomic-layer deposition. Simulations suggest that the intensity collected in our NA =0.6 microscope objective can be increased by a factor 7 with respect to the bare nanowire case. Combining microphotoluminescence, decay time measurements, and numerical simulations, we obtain a fourfold increase in the collected photoluminescence from the quantum dot. We show that this improvement is due to an increase of the quantum-dot emission rate and a redirection of the emitted light. Our ex situ fabrication technique allows a precise and reproducible fabrication on a large scale. Its improved extraction efficiency is compared to state-of-the-art top-down devices.

Dual curved photonic crystal ring resonator based channel drop filter using two-dimensional photonic crystal structure

Energy Technology Data Exchange (ETDEWEB)

Chhipa, Mayur Kumar, E-mail: mayurchhipa1@gmail.com [Deptt. of Electronics and Communication Engineering, Government Engineering College Ajmer Rajasthan INDIA (India); Dusad, Lalit Kumar [Rajasthan Technical University Kota, Rajasthan (India)

2016-05-06

In this paper channel drop filter (CDF) is designed using dual curved photonic crystal ring resonator (PCRR). The photonic band gap (PBG) is calculated by plane wave expansion (PWE) method and the photonic crystal (PhC) based on two dimensional (2D) square lattice periodic arrays of silicon (Si) rods in air structure have been investigated using finite difference time domain (FDTD) method. The number of rods in Z and X directions is 21 and 20 respectively with lattice constant 0.540 nm and rod radius r = 0.1 µm. The channel drop filter has been optimized for telecommunication wavelengths λ = 1.591 µm with refractive indices 3.533. In the designed structure further analysis is also done by changing whole rods refractive index and it has been observed that this filter may be used for filtering several other channels also. The designed structure is useful for CWDM systems. This device may serve as a key component in photonic integrated circuits. The device is ultra compact with the overall size around 123 µm{sup 2}.

A Flexible High-Performance Photoimaging Device Based on Bioinspired Hierarchical Multiple-Patterned Plasmonic Nanostructures.

Science.gov (United States)

Lee, Yoon Ho; Lee, Tae Kyung; Kim, Hongki; Song, Inho; Lee, Jiwon; Kang, Saewon; Ko, Hyunhyub; Kwak, Sang Kyu; Oh, Joon Hak

2018-03-01

In insect eyes, ommatidia with hierarchical structured cornea play a critical role in amplifying and transferring visual signals to the brain through optic nerves, enabling the perception of various visual signals. Here, inspired by the structure and functions of insect ommatidia, a flexible photoimaging device is reported that can simultaneously detect and record incoming photonic signals by vertically stacking an organic photodiode and resistive memory device. A single-layered, hierarchical multiple-patterned back reflector that can exhibit various plasmonic effects is incorporated into the organic photodiode. The multiple-patterned flexible organic photodiodes exhibit greatly enhanced photoresponsivity due to the increased light absorption in comparison with the flat systems. Moreover, the flexible photoimaging device shows a well-resolved spatiotemporal mapping of optical signals with excellent operational and mechanical stabilities at low driving voltages below half of the flat systems. Theoretical calculation and scanning near-field optical microscopy analyses clearly reveal that multiple-patterned electrodes have much stronger surface plasmon coupling than flat and single-patterned systems. The developed methodology provides a versatile and effective route for realizing high-performance optoelectronic and photonic systems. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

App-assisted external ventricular drain insertion.

Science.gov (United States)

Eftekhar, Behzad

2016-09-01

The freehand technique for insertion of an external ventricular drain (EVD) is based on fixed anatomical landmarks and does not take individual variations into consideration. A patient-tailored approach based on augmented-reality techniques using devices such as smartphones can address this shortcoming. The Sina neurosurgical assist (Sina) is an Android mobile device application (app) that was designed and developed to be used as a simple intraoperative neurosurgical planning aid. It overlaps the patient's images from previously performed CT or MRI studies on the image seen through the device camera. The device is held by an assistant who aligns the images and provides information about the relative position of the target and EVD to the surgeon who is performing EVD insertion. This app can be used to provide guidance and continuous monitoring during EVD placement. The author describes the technique of Sina-assisted EVD insertion into the frontal horn of the lateral ventricle and reports on its clinical application in 5 cases as well as the results of ex vivo studies of ease of use and precision. The technique has potential for further development and use with other augmented-reality devices.

Broadband and high absorption in Fibonacci photonic crystal including MoS2 monolayer in the visible range

Science.gov (United States)

Ansari, Narges; Mohebbi, Ensiyeh

2018-03-01

2D molybdenum disulfide MoS2, has represented potential applications in optoelectronic devices based on their promising optical absorption responses. However, for practical applications, absorption should increase furthermore in a wide wavelength window. In this paper, we design Fibonacci photonic crystals (PCs) based on Si, SiO2 and MoS2 monolayer and we calculate their absorption responses based on the transfer matrix method. The optical refractive index of the MoS2 monolayer was determined based on the Lorentz-Drude-Gauss model. Effects of Fibonacci order, periodicity, incident light angle and polarization are included in our calculations. Finally, an absorption as large as 90% in a wide optical wavelength range is achieved for both polarizations and incident angle down to 60°. Our results are useful for designing photonic devices with high absorption efficiency.

Ultra High-Speed Radio Frequency Switch Based on Photonics.

Science.gov (United States)

Ge, Jia; Fok, Mable P

2015-11-26

Microwave switches, or Radio Frequency (RF) switches have been intensively used in microwave systems for signal routing. Compared with the fast development of microwave and wireless systems, RF switches have been underdeveloped particularly in terms of switching speed and operating bandwidth. In this paper, we propose a photonics based RF switch that is capable of switching at tens of picoseconds speed, which is hundreds of times faster than any existing RF switch technologies. The high-speed switching property is achieved with the use of a rapidly tunable microwave photonic filter with tens of gigahertz frequency tuning speed, where the tuning mechanism is based on the ultra-fast electro-optics Pockels effect. The RF switch has a wide operation bandwidth of 12 GHz and can go up to 40 GHz, depending on the bandwidth of the modulator used in the scheme. The proposed RF switch can either work as an ON/OFF switch or a two-channel switch, tens of picoseconds switching speed is experimentally observed for both type of switches.

Efficient fiber-coupled single-photon sources based on quantum dots

DEFF Research Database (Denmark)

Daveau, Raphaël Sura

refrigeration with coupled quantum wells. Many photonic quantum information processing applications would benet from a highbrightness, ber-coupled source of triggered single photons. This thesis presents a study of such sources based on quantum dots coupled to unidirectional photonic-crystal waveguide devices.......6 %. This latter method opens a promising future for increasing the eciency and reliability of planar chip-based single-photon sources. Refrigeration of a solid-state system with light has potential applications for cooling small-scale electronic and photonic circuits. We show theoretically that two coupled...... semiconductor quantum wells are ecient cooling media because they support long-lived indirect electron-hole pairs. These pairs can be thermally excited to distinct higher-energy states with faster radiative recombination, thereby creating an ecient escape channel to remove thermal energy from the system. From...

Challenges and solutions for high-volume testing of silicon photonics

Science.gov (United States)

Polster, Robert; Dai, Liang Yuan; Oikonomou, Michail; Cheng, Qixiang; Rumley, Sebastien; Bergman, Keren

2018-02-01

The first generation of silicon photonic products is now commercially available. While silicon photonics possesses key economic advantages over classical photonic platforms, it has yet to become a commercial success because these advantages can be fully realized only when high-volume testing of silicon photonic devices is made possible. We discuss the costs, challenges, and solutions of photonic chip testing as reported in the recent research literature. We define and propose three underlying paradigms that should be considered when creating photonic test structures: Design for Fast Coupling, Design for Minimal Taps, and Design for Parallel Testing. We underline that a coherent test methodology must be established prior to the design of test structures, and demonstrate how an optimized methodology dramatically reduces the burden when designing for test, by reducing the needed complexity of test structures.

GaN-based integrated photonics chip with suspended LED and waveguide

Science.gov (United States)

Li, Xin; Wang, Yongjin; Hane, Kazuhiro; Shi, Zheng; Yan, Jiang

2018-05-01

We propose a GaN-based integrated photonics chip with suspended LED and straight waveguide with different geometric parameters. The integrated photonics chip is prepared by double-side process. Light transmission performance of the integrated chip verse current is quantitatively analyzed by capturing light transmitted to waveguide tip and BPM (beam propagation method) simulation. Reduction of the waveguide width from 8 μm to 4 μm results in an over linear reduction of the light output power while a doubling of the length from 250 μm to 500 μm only results in under linear decrease of the output power. Free-space data transmission with 80 Mbps random binary sequence of the integrated chip is capable of achieving high speed data transmission via visible light. This study provides a potential approach for GaN-based integrated photonics chip as micro light source and passive optical device in VLC (visible light communication).

Design and construction of a high-energy photon polarimeter

Science.gov (United States)

Dugger, M.; Ritchie, B. G.; Sparks, N.; Moriya, K.; Tucker, R. J.; Lee, R. J.; Thorpe, B. N.; Hodges, T.; Barbosa, F. J.; Sandoval, N.; Jones, R. T.

2017-09-01

We report on the design and construction of a high-energy photon polarimeter for measuring the degree of polarization of a linearly-polarized photon beam. The photon polarimeter uses the process of pair production on an atomic electron (triplet production). The azimuthal distribution of scattered atomic electrons following triplet production yields information regarding the degree of linear polarization of the incident photon beam. The polarimeter, operated in conjunction with a pair spectrometer, uses a silicon strip detector to measure the recoil electron distribution resulting from triplet photoproduction in a beryllium target foil. The analyzing power ΣA for the device using a 75 μm beryllium converter foil is about 0.2, with a relative systematic uncertainty in ΣA of 1.5%.

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

Science.gov (United States)

Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

2017-03-20

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

A light-stimulated synaptic device based on graphene hybrid phototransistor

Science.gov (United States)

Qin, Shuchao; Wang, Fengqiu; Liu, Yujie; Wan, Qing; Wang, Xinran; Xu, Yongbing; Shi, Yi; Wang, Xiaomu; Zhang, Rong

2017-09-01

Neuromorphic chips refer to an unconventional computing architecture that is modelled on biological brains. They are increasingly employed for processing sensory data for machine vision, context cognition, and decision making. Despite rapid advances, neuromorphic computing has remained largely an electronic technology, making it a challenge to access the superior computing features provided by photons, or to directly process vision data that has increasing importance to artificial intelligence. Here we report a novel light-stimulated synaptic device based on a graphene-carbon nanotube hybrid phototransistor. Significantly, the device can respond to optical stimuli in a highly neuron-like fashion and exhibits flexible tuning of both short- and long-term plasticity. These features combined with the spatiotemporal processability make our device a capable counterpart to today’s electrically-driven artificial synapses, with superior reconfigurable capabilities. In addition, our device allows for generic optical spike processing, which provides a foundation for more sophisticated computing. The silicon-compatible, multifunctional photosensitive synapse opens up a new opportunity for neural networks enabled by photonics and extends current neuromorphic systems in terms of system complexities and functionalities.

Black phosphorus-based one-dimensional photonic crystals and microcavities.

Science.gov (United States)

Kriegel, Ilka; Toffanin, Stefano; Scotognella, Francesco

2016-11-10

The latest achievements in the fabrication of thin layers of black phosphorus (BP), toward the technological breakthrough of a phosphorene atomically thin layer, are paving the way for their use in electronics, optics, and optoelectronics. In this work, we have simulated the optical properties of one-dimensional photonic structures, i.e., photonic crystals and microcavities, in which few-layer BP is one of the components. The insertion of the 5-nm black phosphorous layers leads to a photonic band gap in the photonic crystals and a cavity mode in the microcavity that is interesting for light manipulation and emission enhancement.

Monolithically Integrated Ge-on-Si Active Photonics

Directory of Open Access Journals (Sweden)

Jifeng Liu

2014-07-01

Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

International Nuclear Information System (INIS)

Ma, Jingwen; Sun, Xiankai; Xi, Xiang; Yu, Zejie

2016-01-01

Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.

Organic-inorganic hybrid material SUNCONNECT® for photonic integrated circuit

Science.gov (United States)

Nawata, Hideyuki; Oshima, Juro; Kashino, Tsubasa

2018-02-01

In this paper, we report the feature and properties about organic-inorganic hybrid material, "SUNCONNECT®" for photonic integrated circuit. "SUNCONNECT®" materials have low propagation loss at 1310nm (0.29dB/cm) and 1550nm (0.45dB/cm) respectively. In addition, the material has high thermal resistance both high temperature annealing test at 300°C and also 260°C solder heat resistance test. For actual device application, high reliability is required. 85°C /85% test was examined by using multi-mode waveguide. As a result, it indicated that variation of insertion loss property was not changed significantly after high temperature / high humidity test. For the application to photonic integrated circuit, it was demonstrated to fabricate polymer optical waveguide by using three different methods. Single-micron core pattern can be fabricated on cladding layer by using UV lithography with proximity gap exposure. Also, single-mode waveguide can be also fabricated with over cladding. On the other hands, "Mosquito method" and imprint method can be applied to fabricate polymer optical waveguide. Remarkably, these two methods can fabricate gradedindex type optical waveguide without using photo mask. In order to evaluate the optical performance, NFP's observation, measurement of insertion loss and propagation loss by cut-back methods were carried out by using each waveguide sample.

Automated Sample Exchange Robots for the Structural Biology Beam Lines at the Photon Factory

International Nuclear Information System (INIS)

Hiraki, Masahiko; Watanabe, Shokei; Yamada, Yusuke; Matsugaki, Naohiro; Igarashi, Noriyuki; Gaponov, Yurii; Wakatsuki, Soichi

2007-01-01

We are now developing automated sample exchange robots for high-throughput protein crystallographic experiments for onsite use at synchrotron beam lines. It is part of the fully automated robotics systems being developed at the Photon Factory, for the purposes of protein crystallization, monitoring crystal growth, harvesting and freezing crystals, mounting the crystals inside a hutch and for data collection. We have already installed the sample exchange robots based on the SSRL automated mounting system at our insertion device beam lines BL-5A and AR-NW12A at the Photon Factory. In order to reduce the time required for sample exchange further, a prototype of a double-tonged system was developed. As a result of preliminary experiments with double-tonged robots, the sample exchange time was successfully reduced from 70 seconds to 10 seconds with the exception of the time required for pre-cooling and warming up the tongs

Comparing performance of mothers using simplified mid-upper arm circumference (MUAC) classification devices with an improved MUAC insertion tape in Isiolo County, Kenya

DEFF Research Database (Denmark)

Grant, Angeline; Njiru, James; Okoth, Edgar

2018-01-01

to a "gold standard" classification (the mean of three measurements taken by a research assistant using the MUAC insertion tape).  Results: The sensitivity of mother/caregiver classifications was high for all devices (>93% for severe acute malnutrition (SAM), defined by MUAC 90% for global...... acute malnutrition (GAM), defined by MUAC classification was higher using the MUAC insertion tape (100% sensitivity for SAM and 99% sensitivity for GAM) than using "Click-MUAC" devices. Younden's J for SAM classification, and sensitivity for GAM......Background: A novel approach for improving community case-detection of acute malnutrition involves mothers/caregivers screening their children for acute malnutrition using a mid-upper arm circumference (MUAC) insertion tape. The objective of this study was to test three simple MUAC classification...

The band structures of three-dimensional nonlinear plasma photonic crystals

Directory of Open Access Journals (Sweden)

Hai-Feng Zhang

2018-01-01

Full Text Available In this paper, the properties of the photonic band gaps (PBGs for three-dimensional (3D nonlinear plasma photonic crystals (PPCs are theoretically investigated by the plane wave expansion method, whose equations for calculations also are deduced. The configuration of 3D nonlinear PPCs is the Kerr nonlinear dielectric spheres (Kerr effect is considered inserted in the plasma background with simple-cubic lattices. The inserted dielectric spheres are Kerr nonlinear dielectrics whose relative permittivities are the functions of the external light intensity. Three different Kerr nonlinear dielectrics are considered, which can be expressed as the functions of space coordinates. The influences of the parameters for the Kerr nonlinear dielectrics on the PBGs also are discussed. The calculated results demonstrate that the locations, bandwidths and number of PBGs can be manipulated with the different Kerr nonlinear dielectrics. Compared with the conventional 3D dielectric PCs and PPCs with simple-cubic lattices, the more PBGs or larger PBG can be achieved in the 3D nonlinear PPCs. Those results provide a new way to design the novel devices based on the PPCs.

Optical isolation based on space-time engineered asymmetric photonic band gaps

Science.gov (United States)

Chamanara, Nima; Taravati, Sajjad; Deck-Léger, Zoé-Lise; Caloz, Christophe

2017-10-01

Nonreciprocal electromagnetic devices play a crucial role in modern microwave and optical technologies. Conventional methods for realizing such systems are incompatible with integrated circuits. With recent advances in integrated photonics, the need for efficient on-chip magnetless nonreciprocal devices has become more pressing than ever. This paper leverages space-time engineered asymmetric photonic band gaps to generate optical isolation. It shows that a properly designed space-time modulated slab is highly reflective/transparent for opposite directions of propagation. The corresponding design is magnetless, accommodates low modulation frequencies, and can achieve very high isolation levels. An experimental proof of concept at microwave frequencies is provided.

High-temperature superconducting nanowires for photon detection

Energy Technology Data Exchange (ETDEWEB)

Arpaia, R. [Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden); CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Dipartimento di Fisica, Università degli Studi di Napoli ‘Federico II’, I-80125 Napoli (Italy); Ejrnaes, M. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Parlato, L. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Dipartimento di Fisica, Università degli Studi di Napoli ‘Federico II’, I-80125 Napoli (Italy); Tafuri, F. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Dipartimento di Ingegneria Industriale e dell’Informazione, Seconda Università di Napoli, I-81031 Aversa, CE (Italy); Cristiano, R. [CNR SPIN Institute – Superconductors, Innovative Materials and Devices, UOS–Napoli, I-80100 Napoli (Italy); Golubev, D. [Low Temperature Laboratory (OVLL), Aalto University School of Science, P.O. Box 13500, FI-00076 Aalto (Finland); Sobolewski, Roman, E-mail: roman.sobolewski@rochester.edu [Institute of Electron Technology, PL-02668 Warszawa (Poland); Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, NY 14627-0231 (United States); Bauch, T.; Lombardi, F. [Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden); and others

2015-02-15

Highlights: • Homogeneous YBCO nanowires have been fabricated for photon detection applications. • Serial-parallel nanowire configuration leads to a large detector active area. • The YBCO nanowires exhibit critical current densities up to 106 A/cm{sup 2}. • The devices have been excited using a 1550-nm wavelength, pulsed laser irradiation. • Photoresponse signals have been measured and analyzed from 4 K up to the device T{sub c}. - Abstract: The possible use of high-temperature superconductors (HTS) for realizing superconducting nanowire single-photon detectors is a challenging, but also promising, aim because of their ultrafast electron relaxation times and high operating temperatures. The state-of-the-art HTS nanowires with a 50-nm thickness and widths down to 130 nm have been fabricated and tested under a 1550-nm wavelength laser irradiation. Experimental results presenting both the amplitude and rise times of the photoresponse signals as a function of the normalized detector bias current, measured in a wide temperature range, are discussed. The presence of two distinct regimes in the photoresponse temperature dependence is clearly evidenced, indicating that there are two different response mechanisms responsible for the HTS photoresponse mechanisms.

Advanced processing methods to introduce and preserve dipole orientation in organic electro-optic materials for next generation photonic devices

Science.gov (United States)

Huang, Su

Organic electro-optic (E-O) materials have attracted considerable research attention in the past 20 years due to their rising potentials in a lot of novel photonic applications, such as high-speed telecommunication, terahertz generation and ultra-fast optical interconnections. Chapter 2 of this dissertation focuses on a barrier layer approach to improve the poling efficiency of electro-optic polymers. First of all, high conduction current from excessive charge injection is identified as a fundamental challenge of effective poling. After analyzing the conduction mechanism, we introduce a sol-gel derived thin titanium dioxide (TiO2) layer that can significantly block excessive charge injection and reduce the leakage current during high field poling. Ultralarge E-O coefficients, up to 160-350 pm/V at 1310 nm have been achieved by poling with such a barrier, which are 26%-40% higher than the results poled without such a TiO2 layer. This enhancement is explained by the suppressed charge injection and space charge accumulation by the insertion of the high injection barrier from the TiO2 barrier layer. In Chapter 3, the impact of the inserted barrier layer on the temporal alignment stability of E-O polymers is discussed. Considerable stability enhancement is confirmed using both standard 500-hour temporal alignment stability test at 85 °C and thermally stimulated discharge method. We suggest that the enhancement comes from improved stability of the screening charge. During poling the additional barrier layer helps to lower the injection and thus the space charge accumulation. And this reduced space charge accumulation further helps to replace the space charge part in the total formulation of screening charge with more stable interface trapped charge. We thus expand this knowledge to a group of other materials that can also block excessive charge injection and suppressed space charge accumulation, including dielectric polymers polyvinyl alcohol (PVA), poly(4-vinylphenol

Undulator sources at a 8 GeV storage ring

International Nuclear Information System (INIS)

Harami, Taikan.

1989-06-01

The use of undulators plays an important role as a high brilliance sources of synchrotron photon at a facility having an electron (or positron) storage ring. This paper describes the characteristics, tunability from gap variation and brilliance of synchrotron photon from undulators at a 8 GeV storage ring. The numerical studies show the following results. (1) Undulators for a 8 GeV storage ring can cover the first harmonic photon energy range from about 0.3 to 30 keV and the third harmonic photon from 0.85 to 70 keV. (2) The brilliance of undulator can be expected to be the order of 10 21 photons/(sec mm 2 mrad 2 0.1% band width mA), without size and angular spread in the electron beam (diffraction limit). (3) The peak brilliance has a broad maximum as a function of β function of the lattice and is shown to be practically independent on the β function. The peak brilliance is calculated to be the order of 10 16 photons/(sec mm 2 mrad 2 0.1% band width mA) at the electron beam emittance of 5 x 10 -9 m·rad (undulator length 2 m). (4) The nuclei of 57 Fe, 119 Sn and 238 U are expected to be the candidates for the Moessbauer scattering experiment using synchrotron photon from a 8 GeV storage ring. (author)

High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

Science.gov (United States)

Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

2017-04-01

Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices.

Photonomics: automation approaches yield economic aikido for photonics device manufacture

Science.gov (United States)

Jordan, Scott

2002-09-01

In the glory days of photonics, with exponentiating demand for photonics devices came exponentiating competition, with new ventures commencing deliveries seemingly weekly. Suddenly the industry was faced with a commodity marketplace well before a commodity cost structure was in place. Economic issues like cost, scalability, yield-call it all "Photonomics" -now drive the industry. Automation and throughput-optimization are obvious answers, but until now, suitable modular tools had not been introduced. Available solutions were barely compatible with typical transverse alignment tolerances and could not automate angular alignments of collimated devices and arrays. And settling physics served as the insoluble bottleneck to throughput and resolution advancement in packaging, characterization and fabrication processes. The industry has addressed these needs in several ways, ranging from special configurations of catalog motion devices to integrated microrobots based on a novel mini-hexapod configuration. This intriguing approach allows tip/tilt alignments to be automated about any point in space, such as a beam waist, a focal point, the cleaved face of a fiber, or the optical axis of a waveguide- ideal for MEMS packaging automation and array alignment. Meanwhile, patented new low-cost settling-enhancement technology has been applied in applications ranging from air-bearing long-travel stages to subnanometer-resolution piezo positioners to advance resolution and process cycle-times in sensitive applications such as optical coupling characterization and fiber Bragg grating generation. Background, examples and metrics are discussed, providing an up-to-date industry overview of available solutions.

On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

Science.gov (United States)

Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

2018-04-01

The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

High heat load x-ray optics research and development at the Advanced Photon Source -- An overview

International Nuclear Information System (INIS)

Lee, Wah-Keat; Mills, D.M.

1993-09-01

Insertion devices at third generation synchrotron radiation sources such as the APS are capable of producing x-ray beams with total power in excess of 7 kilowatts or power densities of 150 watts/mm 2 at a typical location of the optical components. Optical elements subjected to these types of heat fluxes will suffer considerably unless carefully designed to withstand these unprecedented power loadings. At the Advanced Photon Source (APS), we have an aggressive R ampersand D program aimed at investigating possible methods to mitigate thermal distortions. The approaches being studied include, improved heat exchangers, use of liquid gallium and liquid nitrogen as coolants, novel crystal geometries, power filtering, and replacement of silicon with diamond for crystal monochromators. This paper will provide an overview of the high heat load x-ray optics program at the APS

Superconducting single-photon detectors designed for operation at 1.55-μm telecommunication wavelength

International Nuclear Information System (INIS)

Milostnaya, I; Korneev, A; Rubtsova, I; Seleznev, V; Minaeva, O; Chulkova, G; Okunev, O; Voronov, B; Smirnov, K; Gol'tsman, G; Slysz, W; Wegrzecki, M; Guziewicz, M; Bar, J; Gorska, M; Pearlman, A; Kitaygorsky, J; Cross, A; Sobolewski, Roman

2006-01-01

We report on our progress in development of superconducting single-photon detectors (SSPDs), specifically designed for secure high-speed quantum communications. The SSPDs consist of NbN-based meander nanostructures and operate at liquid helium temperatures. In general, our devices are capable of GHz-rate photon counting in a spectral range from visible light to mid-infrared. The device jitter is 18 ps and dark counts can reach negligibly small levels. The quantum efficiency (QE) of our best SSPDs for visible-light photons approaches a saturation level of ∼30-40%, which is limited by the NbN film absorption. For the infrared range (1.55μm), QE is ∼6% at 4.2 K, but it can be significantly improved by reduction of the operation temperature to the 2-K level, when QE reaches ∼20% for 1.55-μm photons. In order to further enhance the SSPD efficiency at the wavelength of 1.55 μm, we have integrated our detectors with optical cavities, aiming to increase the effective interaction of the photon with the superconducting meander and, therefore, increase the QE. A successful effort was made to fabricate an advanced SSPD structure with an optical microcavity optimized for absorption of 1.55 μm photons. The design consisted of a quarter-wave dielectric layer, combined with a metallic mirror. Early tests performed on relatively low-QE devices integrated with microcavities, showed that the QE value at the resonator maximum (1.55-μm wavelength) was of the factor 3-to-4 higher than that for a nonresonant SSPD. Independently, we have successfully coupled our SSPDs to single-mode optical fibers. The completed receivers, inserted into a liquid-helium transport dewar, reached ∼1% system QE for 1.55 μm photons. The SSPD receivers that are fiber-coupled and, simultaneously, integrated with resonators are expected to be the ultimate photon counters for optical quantum communications

Quantum optics. All-optical routing of single photons by a one-atom switch controlled by a single photon.

Science.gov (United States)

Shomroni, Itay; Rosenblum, Serge; Lovsky, Yulia; Bechler, Orel; Guendelman, Gabriel; Dayan, Barak

2014-08-22

The prospect of quantum networks, in which quantum information is carried by single photons in photonic circuits, has long been the driving force behind the effort to achieve all-optical routing of single photons. We realized a single-photon-activated switch capable of routing a photon from any of its two inputs to any of its two outputs. Our device is based on a single atom coupled to a fiber-coupled, chip-based microresonator. A single reflected control photon toggles the switch from high reflection (R ~ 65%) to high transmission (T ~ 90%), with an average of ~1.5 control photons per switching event (~3, including linear losses). No additional control fields are required. The control and target photons are both in-fiber and practically identical, making this scheme compatible with scalable architectures for quantum information processing. Copyright © 2014, American Association for the Advancement of Science.

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Science.gov (United States)

Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

2018-03-01

III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits.

Science.gov (United States)

Schmidgall, Emma R; Chakravarthi, Srivatsa; Gould, Michael; Christen, Ian R; Hestroffer, Karine; Hatami, Fariba; Fu, Kai-Mei C

2018-02-14

Generating entangled graph states of qubits requires high entanglement rates with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.

Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits

Science.gov (United States)

Schmidgall, Emma R.; Chakravarthi, Srivatsa; Gould, Michael; Christen, Ian R.; Hestroffer, Karine; Hatami, Fariba; Fu, Kai-Mei C.

2018-02-01

Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.

High performance printed oxide field-effect transistors processed using photonic curing

Science.gov (United States)

Garlapati, Suresh Kumar; Cadilha Marques, Gabriel; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Baradaran Tahoori, Mehdi; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

2018-06-01

Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

Flexible and tunable silicon photonic circuits on plastic substrates

Science.gov (United States)

Chen, Yu; Li, Huan; Li, Mo

2012-09-01

Flexible microelectronics has shown tremendous promise in a broad spectrum of applications, especially those that cannot be addressed by conventional microelectronics in rigid materials and constructions. These unconventional yet important applications range from flexible consumer electronics to conformal sensor arrays and biomedical devices. A recent paradigm shift in implementing flexible electronics is to physically transfer highly integrated devices made in high-quality, crystalline semiconductors on to plastic substrates. Here we demonstrate a flexible form of silicon photonics using the transfer-and-bond fabrication method. Photonic circuits including interferometers and resonators have been transferred onto flexible plastic substrates with preserved functionalities and performance. By mechanically deforming, the optical characteristics of the devices can be tuned reversibly over a remarkably large range. The demonstration of the new flexible photonic systems based on the silicon-on-plastic (SOP) platform could open the door to many future applications, including tunable photonics, optomechanical sensors and biomechanical and bio-photonic probes.

Improving the neutron-to-photon discrimination capability of detectors used for neutron dosimetry in high energy photon beam radiotherapy

International Nuclear Information System (INIS)

Irazola, L.; Terrón, J.A.; Bedogni, R; Pola, A.; Lorenzoli, M.; Sánchez-Nieto, B.; Gómez, F.; Sánchez-Doblado, F.

2016-01-01

The increasing interest of the medical community to radioinduced second malignancies due to photoneutrons in patients undergoing high-energy radiotherapy, has stimulated in recent years the study of peripheral doses, including the development of some dedicated active detectors. Although these devices are designed to respond to neutrons only, their parasitic photon response is usually not identically zero and anisotropic. The impact of these facts on measurement accuracy can be important, especially in points close to the photon field-edge. A simple method to estimate the photon contribution to detector readings is to cover it with a thermal neutron absorber with reduced secondary photon emission, such as a borated rubber. This technique was applied to the TNRD (Thermal Neutron Rate Detector), recently validated for thermal neutron measurements in high-energy photon radiotherapy. The positive results, together with the accessibility of the method, encourage its application to other detectors and different clinical scenarios. - Highlights: • Neutron-to-photon discrimination of a thermal neutron detector used in radiotherapy. • Photon and anisotropic response study with distance and beam incidence of thermal neutron detector. • Borated rubber for estimating photon contribution in any thermal neutron detector.

Linear motion device and method for inserting and withdrawing control rods

International Nuclear Information System (INIS)

Smith, J. E.

1984-01-01

A linear motion device, more specifically a control rod drive mechanism (CRDM) for inserting and withdrawing control rods into a reactor core, is capable of independently and sequentially positioning two sets of control rods with a single motor stator and rotor. The CRDM disclosed can control more than one control rod lead screw without incurring a substantial increase in the size of the mechanism

Micro-concave waveguide antenna for high photon extraction from nitrogen vacancy centers in nanodiamond

Science.gov (United States)

Rajasekharan, Ranjith; Kewes, Günter; Djalalian-Assl, Amir; Ganesan, Kumaravelu; Tomljenovic-Hanic, Snjezana; McCallum, Jeffrey C.; Roberts, Ann; Benson, Oliver; Prawer, Steven

2015-01-01

The negatively charged nitrogen-vacancy colour center (NV− center) in nanodiamond is an excellent single photon source due to its stable photon generation in ambient conditions, optically addressable nuclear spin state, high quantum yield and its availability in nanometer sized crystals. In order to make practical devices using nanodiamond, highly efficient and directional emission of single photons in well-defined modes, either collimated into free space or waveguides are essential. This is a Herculean task as the photoluminescence of the NV centers is associated with two orthogonal dipoles arranged in a plane perpendicular to the NV defect symmetry axis. Here, we report on a micro-concave waveguide antenna design, which can effectively direct single photons from any emitter into either free space or into waveguides in a narrow cone angle with more than 80% collection efficiency irrespective of the dipole orientation. The device also enhances the spontaneous emission rate which further increases the number of photons available for collection. The waveguide antenna has potential applications in quantum cryptography, quantum computation, spectroscopy and metrology. PMID:26169682

Fiber Bragg grating based arterial localization device

Science.gov (United States)

Ho, Siu Chun Michael; Li, Weijie; Razavi, Mehdi; Song, Gangbing

2017-06-01

A critical first step to many surgical procedures is locating and gaining access to a patients vascular system. Vascular access allows the deployment of other surgical instruments and also the monitoring of many physiological parameters. Current methods to locate blood vessels are predominantly based on the landmark technique coupled with ultrasound, fluoroscopy, or Doppler. However, even with experience and technological assistance, locating the required blood vessel is not always an easy task, especially with patients that present atypical anatomy or suffer from conditions such as weak pulsation or obesity that make vascular localization difficult. With recent advances in fiber optic sensors, there is an opportunity to develop a new tool that can make vascular localization safer and easier. In this work, the authors present a new fiber Bragg grating (FBG) based vascular access device that specializes in arterial localization. The device estimates the location towards a local artery based on the bending of a needle inserted near the tissue surrounding the artery. Experimental results obtained from an artificial circulatory loop and a mock artery show the device works best for lower angles of needle insertion and can provide an approximately 40° range of estimation towards the location of a pulsating source (e.g. an artery).

Parametric mechanical design of new insertion devices at the APS.

Energy Technology Data Exchange (ETDEWEB)

Grimmer, J.; Kmak, R.

2005-01-01

Three permanent-magnet, planar, hybrid insertion device (ID) designs have recently been completed at the APS. The periods of these undulators are 2.7 cm, 3.0 cm and 3.5 cm with nominal lengths of 2.4 m. Several design studies were performed for the initial 2.7-cm-period device. Then a parametric solid model for the initial device was developed and value engineered to minimize manufacturing, assembly and tuning costs. The model allowed the very rapid design of subsequent devices of similar periods and allowed commonality of several components of the IDs. This design family incorporates a low-cost method of pole retention and registration. Poles are secured by screws in two holes tapped into each pole. Pole location is registered by means of two small dowel pins in mating holes reamed into each pole and a 'divider' plate common to the poles and magnets. This divider plate is flexible along its length so shimming behind it can be used to accurately change the height of a pair of poles for tuning. Another feature of the design is modular construction to allow each device to be used full length or shortened to a nominal 2.1 m length for use in APS 'canted undulator' sectors.

High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice

Science.gov (United States)

Razeghi, Manijeh; Nguyen, Binh-Minh; Delaunay, Pierre-Yves; Abdollahi Pour, Siamak; Huang, Edward Kwei-wei; Manukar, Paritosh; Bogdanov, Simeon; Chen, Guanxi

2010-01-01

Recent efforts have been paid to elevate the operating temperature of Type II InAs/GaSb superlattice Mid Infrared photon detectors. Optimized growth parameters and interface engineering technique enable high quality material with a quantum efficiency above 50%. Intensive study on device architecture and doping profile has resulted in almost one order of magnitude of improvement to the electrical performance and lifted up the 300K-background BLIP operation temperature to 166K. At 77K, the ~4.2 μm cut-off devices exhibit a differential resistance area product in excess of the measurement system limit (106 Ohm.cm2) and a detectivity of 3x1013cm.Hz1/2/W. High quality focal plane arrays were demonstrated with a noise equivalent temperature of 10mK at 77K. Uncooled camera is capable to capture hot objects such as soldering iron.

ALICE photon spectrometer crystals

CERN Multimedia

Maximilien Brice

2006-01-01

Members of the mechanical assembly team insert the last few crystals into the first module of ALICE's photon spectrometer. These crystals are made from lead-tungstate, a crystal as clear as glass but with nearly four times the density. When a high-energy particle passes through one of these crystals it will scintillate, emitting a flash of light allowing the energy of photons, electrons and positrons to be measured.

Laser-powered dielectric-structures for the production of high-brightness electron and x-ray beams

Science.gov (United States)

Travish, Gil; Yoder, Rodney B.

2011-05-01

Laser powered accelerators have been under intensive study for the past decade due to their promise of high gradients and leveraging of rapid technological progress in photonics. Of the various acceleration schemes under examination, those based on dielectric structures may enable the production of relativistic electron beams in breadbox sized systems. When combined with undulators having optical-wavelength periods, these systems could produce high brilliance x-rays which find application in, for instance, medical and industrial imaging. These beams also may open the way for table-top atto-second sciences. Development and testing of these dielectric structures faces a number of challenges including complex beam dynamics, new demands on lasers and optical coupling, beam injection schemes, and fabrication. We describe one approach being pursued at UCLA-the Micro Accelerator Platform (MAP). A structure similar to the MAP has also been designed which produces periodic deflections and acts as an undulator for radiation production, and the prospects for this device will be considered. The lessons learned from the multi-year effort to realize these devices will be presented. Challenges remain with acceleration of sub-relativistic beams, focusing, beam phase stability and extension of these devices to higher beam energies. Our progress in addressing these hurdles will be summarized. Finally, the demands on laser technology and optical coupling will be detailed.

Photon acceleration-based radiation sources

International Nuclear Information System (INIS)

Hoffman, J. R.; Muggli, P.; Katsouleas, T.; Mori, W. B.; Joshi, C.

1999-01-01

The acceleration and deceleration of photons in a plasma provides the means for a series of new radiation sources. Previous work on a DC to AC Radiation Converter (DARC source) has shown variable acceleration of photons having zero frequency (i.e., an electrostatic field) to between 6 and 100 GHz (1-3). These sources all had poor guiding characteristics resulting in poor power coupling from the source to the load. Continuing research has identified a novel way to integrate the DARC source into a waveguide. The so called ''pin structure'' uses stainless steel pins inserted through the narrow side of an X band waveguide to form the electrostatic field pattern (k≠0, ω=0). The pins are spaced such that the absorption band resulting from this additional periodic structure is outside of the X band range (8-12 GHz), in which the normal waveguide characteristics are left unchanged. The power of this X band source is predicted theoretically to scale quadratically with the pin bias voltage as -800 W/(kV) 2 and have a pulse width of -1 ns. Cold tests and experimental results are presented. Applications for a high power, short pulse radiation source extends to the areas of landmine detection, improved radar resolution, and experimental investigations of molecular systems

Superconducting nanowire single-photon detectors: physics and applications

International Nuclear Information System (INIS)

Natarajan, Chandra M; Tanner, Michael G; Hadfield, Robert H

2012-01-01

Single-photon detectors based on superconducting nanowires (SSPDs or SNSPDs) have rapidly emerged as a highly promising photon-counting technology for infrared wavelengths. These devices offer high efficiency, low dark counts and excellent timing resolution. In this review, we consider the basic SNSPD operating principle and models of device behaviour. We give an overview of the evolution of SNSPD device design and the improvements in performance which have been achieved. We also evaluate device limitations and noise mechanisms. We survey practical refrigeration technologies and optical coupling schemes for SNSPDs. Finally we summarize promising application areas, ranging from quantum cryptography to remote sensing. Our goal is to capture a detailed snapshot of an emerging superconducting detector technology on the threshold of maturity. (topical review)

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

Science.gov (United States)

Driscoll, Jeffrey B.

Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

Quantum photonics with quantum dots in photonic wires

DEFF Research Database (Denmark)

Munsch, Mathieu; Kuhlmann, Andreas; Cadeddu, Davide

2016-01-01

We present results from the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter’s properties with the highest sensitivity. Weperform...

Device for facilitating the insertion and withdrawal of fuel assemblies from a nuclear reactor

International Nuclear Information System (INIS)

Andrea, C.; Siegel, E.A.

1976-01-01

A device is provided which is installed in a reactor prior to carrying out refueling operations and which accurately locates and isolates a selected core location to permit rapid withdrawal and insertion of fuel subassemblies at that location. A shielded plug designed to cooperate with the refueling apparatus is inserted into an access port in the reactor head. A structural shroud extends down from the plug and carries at its lower end a radially floating, hexagonal spreader tube with mechanisms to rotate it for angular alignment purposes and a linear drive for inserting it into the core. The upper end of the spreader tube serves as a guide for leading the fuel handling apparatus into alignment with the chosen subassembly

Linear motion device and method for inserting and withdrawing control rods

Science.gov (United States)

Smith, J.E.

Disclosed is a linear motion device and more specifically a control rod drive mechanism (CRDM) for inserting and withdrawing control rods into a reactor core. The CRDM and method disclosed is capable of independently and sequentially positioning two sets of control rods with a single motor stator and rotor. The CRDM disclosed can control more than one control rod lead screw without incurring a substantial increase in the size of the mechanism.

Dark and bright modes manipulation for plasmon-triggered photonic devices

KAUST Repository

Panaro, S.

2014-09-10

In the last decade, several efforts have been spent in the study of near-field coupled systems, in order to induce hybridization of plasmonic modes. Within this context, particular attention has been recently paid on the possibility to couple conventional bright and dark modes. As a result of such phenomenon, a Fano resonance appears as a characteristic sharp dip in the scattering spectra. Here we show how, gradually coupling a single rod-like nanostructure to an aligned nanoantenna dimer, it is possible to induce the near-field activation of an anti-bonding dark mode. The high polarization sensitivity presented by the far-field response of T-shape trimer, combined with the sharp Fano resonance sustained by this plasmonic device, opens interesting perspectives towards a new era of photonic devices. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

Dark and bright modes manipulation for plasmon-triggered photonic devices

KAUST Repository

Panaro, S.; Nazir, A.; Liberale, Carlo; Wang, H.; De Angelis, F.; Proietti Zaccaria, R.; Di Fabrizio, Enzo M.; Toma, A.

2014-01-01

In the last decade, several efforts have been spent in the study of near-field coupled systems, in order to induce hybridization of plasmonic modes. Within this context, particular attention has been recently paid on the possibility to couple conventional bright and dark modes. As a result of such phenomenon, a Fano resonance appears as a characteristic sharp dip in the scattering spectra. Here we show how, gradually coupling a single rod-like nanostructure to an aligned nanoantenna dimer, it is possible to induce the near-field activation of an anti-bonding dark mode. The high polarization sensitivity presented by the far-field response of T-shape trimer, combined with the sharp Fano resonance sustained by this plasmonic device, opens interesting perspectives towards a new era of photonic devices. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

International Nuclear Information System (INIS)

Zhang, Xingyu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chakravarty, Swapnajit; Chen, Ray T.

2015-01-01

We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB

Photonic Hilbert transformers based on laterally apodized integrated waveguide Bragg gratings on a SOI wafer.

Science.gov (United States)

Bazargani, Hamed Pishvai; Burla, Maurizio; Chrostowski, Lukas; Azaña, José

2016-11-01

We experimentally demonstrate high-performance integer and fractional-order photonic Hilbert transformers based on laterally apodized Bragg gratings in a silicon-on-insulator technology platform. The sub-millimeter-long gratings have been fabricated using single-etch electron beam lithography, and the resulting HT devices offer operation bandwidths approaching the THz range, with time-bandwidth products between 10 and 20.

Gold nanoparticle-embedded silk protein-ZnO nanorod hybrids for flexible bio-photonic devices

Science.gov (United States)

Gogurla, Narendar; Kundu, Subhas C.; Ray, Samit K.

2017-04-01

Silk protein has been used as a biopolymer substrate for flexible photonic devices. Here, we demonstrate ZnO nanorod array hybrid photodetectors on Au nanoparticle-embedded silk protein for flexible optoelectronics. Hybrid samples exhibit optical absorption at the band edge of ZnO as well as plasmonic energy due to Au nanoparticles, making them attractive for selective UV and visible wavelength detection. The device prepared on Au-silk protein shows a much lower dark current and a higher photo to dark-current ratio of ∼105 as compared to the control sample without Au nanoparticles. The hybrid device also exhibits a higher specific detectivity due to higher responsivity arising from the photo-generated hole trapping by Au nanoparticles. Sharp pulses in the transient photocurrent have been observed in devices prepared on glass and Au-silk protein substrates due to the light induced pyroelectric effect of ZnO, enabling the demonstration of self-powered photodetectors at zero bias. Flexible hybrid detectors have been demonstrated on Au-silk/polyethylene terephthalate substrates, exhibiting characteristics similar to those fabricated on rigid glass substrates. A study of the performance of photodetectors with different bending angles indicates very good mechanical stability of silk protein based flexible devices. This novel concept of ZnO nanorod array photodetectors on a natural silk protein platform provides an opportunity to realize integrated flexible and self-powered bio-photonic devices for medical applications in near future.

Multichannel photonic Hilbert transformers based on complex modulated integrated Bragg gratings.

Science.gov (United States)

Cheng, Rui; Chrostowski, Lukas

2018-03-01

Multichannel photonic Hilbert transformers (MPHTs) are reported. The devices are based on single compact spiral integrated Bragg gratings on silicon with coupling coefficients precisely modulated by the phase of each grating period. MPHTs with up to nine wavelength channels and a single-channel bandwidth of up to ∼625  GHz are achieved. The potential of the devices for multichannel single-sideband signal generation is suggested. The work offers a new possibility of utilizing wavelength as an extra degree of freedom in designing radio-frequency photonic signal processors. Such multichannel processors are expected to possess improved capacities and a potential to greatly benefit current widespread wavelength division multiplexed systems.

Study of micro pixel photon counters for a high granularity scintillator-based hadron calorimeter

International Nuclear Information System (INIS)

D'Ascenzo, N.; Eggemann, A.; Garutti, E.

2007-11-01

A new Geiger mode avalanche photodiode, the Micro Pixel Photon Counter (MPPC), was recently released by Hamamatsu. It has a high photo-detection efficiency in the 420 nm spectral region. This product can represent an elegant candidate for the design of a high granularity scintillator based hadron calorimeter for the International Linear Collider. In fact, the direct readout of the blue scintillation photons with a MPPC is a feasible techological solution. The readout of a plastic scintillator by a MPPC, both mediated by the traditional wavelength shifting fiber, and directly coupled, has been systematically studied. (orig.)

Nonclassical light sources for silicon photonics

Science.gov (United States)

Bajoni, Daniele; Galli, Matteo

2017-09-01

Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

Low dimension structures and devices for new generation photonic technology

International Nuclear Information System (INIS)

Zhang, D. H.; Tang, D. Y.; Chen, T. P.; Mei, T.; Yuan, X. C.

2014-01-01

Low dimensional structures and devices are the key technological building blocks for new generation of electronic and photonic technology. Such structures and devices show novel properties and can be integrated into systems for wide applications in many areas, including medical, biological and military and advancement of science. In this invited talk, I will present the main results achieved in our competitive research program which aims to explore the application of the mesoscopic structures in light source, manipulation and imaging and integrate them into advanced systems. In the light source aspect, we have for the first time developed graphene mode-locked lasers which are in the process of commercialization. Nanocrystal Si embedded in dielectrics was formed by ion implantation and subsequent annealing. Si light emitting devices with external quantum efficiency of about 2.9×10 −3 % for visible emission were demonstrated at room temperature and the color of emitted light can be tuned electrically from violet to white by varying the injected current. In light manipulation, loss compensation of surface plasmon polaritons (SPPs) using quantum well (QW) gain media was studied theoretically and demonstrated experimentally. The SPP propagation length was effectively elongated several times through electrical pumping. One and two microring resonators based on silicon on insulator and III-V semiconductors technologies have been successfully fabricated and they can be used as filter and switch in the photonic circuit. In imaging, both SPP and low dimension structures are investigated and resolution far beyond diffraction limit in visible range has been realized. The integration of the components in the three aspects into complicated systems is on the way

Photonic devices based on patterning by two photon induced polymerization techniques

Science.gov (United States)

Fortunati, I.; Dainese, T.; Signorini, R.; Bozio, R.; Tagliazucca, V.; Dirè, S.; Lemercier, G.; Mulatier, J.-C.; Andraud, C.; Schiavuta, P.; Rinaldi, A.; Licoccia, S.; Bottazzo, J.; Franco Perez, A.; Guglielmi, M.; Brusatin, G.

2008-04-01

Two and three dimensional structures with micron and submicron resolution have been achieved in commercial resists, polymeric materials and sol-gel materials by several lithographic techniques. In this context, silicon-based sol-gel materials are particularly interesting because of their versatility, chemical and thermal stability, amount of embeddable active compounds. Compared with other micro- and nano-fabrication schemes, the Two Photon Induced Polymerization is unique in its 3D processing capability. The photopolymerization is performed with laser beam in the near-IR region, where samples show less absorption and less scattering, giving rise to a deeper penetration of the light. The use of ultrashort laser pulses allows the starting of nonlinear processes like multiphoton absorption at relatively low average power without thermally damaging the samples. In this work we report results on the photopolymerization process in hybrid organic-inorganic films based photopolymerizable methacrylate-containing Si-nanobuilding blocks. Films, obtained through sol-gel synthesis, are doped with a photo-initiator allowing a radical polymerization of methacrylic groups. The photo-initiator is activated by femtosecond laser source, at different input energies. The development of the unexposed regions is performed with a suitable solvent and the photopolymerized structures are characterized by microscopy techniques.

Direct observation of organic layer growth by dynamic spectro-microscopy using high-brilliance synchrotron

International Nuclear Information System (INIS)

Umbach, E.

2004-01-01

It was always the dream of scientists to watch microscopic objects directly on an atomic scale, to follow their dynamical behaviour, and to know everything about them, i.e. to get as much spectroscopic information as possible. While instruments have become available which may fulfill two of these wishes simultaneously, it is much more difficult to get all three at once. The development of so called spectro-microscopes which operate at 3rd generation synchrotron sources nourishes the hope that this dream will become true in the near future. The talk intends to show how much can be learned about organic thin films and interfaces if high-brilliance synchrotron radiation is combined with new instruments, for instance a high energy resolution beamline and a high-spatial resolution spectro-microscope. While the former is standard technology of today, the latter is a new development, combining brilliant undulator radiation of variable polarization with a specially developed, energy-filtered low energy electron microscope. First, it will be shown that many new details about the electronic structure of organic materials and their interaction with one another or with an interface can be obtained using high-resolution photoemission and x-ray absorption. For instance, from a careful analysis of the fine structure of photoemission spectra one can derive details about the interface bonding, about the interaction between molecules, and about the dynamic response of the molecular system upon creation of a core hole. Or, from a careful analysis of the fine structure of high resolution x-ray absorption spectra one gets insight into the intermolecular interaction, the coupling between electronic and vibronic excitations, and even about the shapes of potential curves. Second, the dynamic growth of highly-ordered organic thin films will be followed as a function of molecule and preparation conditions. The formation of islands, the inner structure of organic crystallites, diffusion

Graphene-based photonic crystal

International Nuclear Information System (INIS)

Berman, Oleg L.; Boyko, Vladimir S.; Kezerashvili, Roman Ya.; Kolesnikov, Anton A.; Lozovik, Yurii E.

2010-01-01

A novel type of photonic crystal formed by embedding a periodic array of constituent stacks of alternating graphene and dielectric discs into a background dielectric medium is proposed. The photonic band structure and transmittance of such photonic crystal are calculated. The graphene-based photonic crystals can be used effectively as the frequency filters and waveguides for the far infrared region of electromagnetic spectrum. Due to substantial suppression of absorption of low-frequency radiation in doped graphene the damping and skin effect in the photonic crystal are also suppressed. The advantages of the graphene-based photonic crystal are discussed.

Low Li+ Insertion Barrier Carbon for High Energy Efficient Lithium-Ion Capacitor.

Science.gov (United States)

Lee, Wee Siang Vincent; Huang, Xiaolei; Tan, Teck Leong; Xue, Jun Min

2018-01-17

Lithium-ion capacitor (LIC) is an attractive energy-storage device (ESD) that promises high energy density at moderate power density. However, the key challenge in its design is the low energy efficient negative electrode, which barred the realization of such research system in fulfilling the current ESD technological inadequacy due to its poor overall energy efficiency. Large voltage hysteresis is the main issue behind high energy density alloying/conversion-type materials, which reduces the electrode energy efficiency. Insertion-type material though averted in most research due to the low capacity remains to be highly favorable in commercial application due to its lower voltage hysteresis. To further reduce voltage hysteresis and increase capacity, amorphous carbon with wider interlayer spacing has been demonstrated in the simulation result to significantly reduce Li + insertion barrier. Hence, by employing such amorphous carbon, together with disordered carbon positive electrode, a high energy efficient LIC with round-trip energy efficiency of 84.3% with a maximum energy density of 133 Wh kg -1 at low power density of 210 W kg -1 can be achieved.

Recent Advances in Gas and Chemical Detection by Vernier Effect-Based Photonic Sensors

Directory of Open Access Journals (Sweden)

Mario La Notte

2014-03-01

Full Text Available Recently, the Vernier effect has been proved to be very efficient for significantly improving the sensitivity and the limit of detection (LOD of chemical, biochemical and gas photonic sensors. In this paper a review of compact and efficient photonic sensors based on the Vernier effect is presented. The most relevant results of several theoretical and experimental works are reported, and the theoretical model of the typical Vernier effect-based sensor is discussed as well. In particular, sensitivity up to 460 μm/RIU has been experimentally reported, while ultra-high sensitivity of 2,500 μm/RIU and ultra-low LOD of 8.79 × 10−8 RIU have been theoretically demonstrated, employing a Mach-Zehnder Interferometer (MZI as sensing device instead of an add drop ring resonator.

Hybrid Integrated Platforms for Silicon Photonics

Science.gov (United States)

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Photon technology. Hard photon technology; Photon technology. Hard photon gijutsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

For the application of photon to industrial technologies, in particular, a hard photon technology was surveyed which uses photon beams of 0.1-200nm in wavelength. Its features such as selective atom reaction, dense inner shell excitation and spacial high resolution by quantum energy are expected to provide innovative techniques for various field such as fine machining, material synthesis and advanced inspection technology. This wavelength region has been hardly utilized for industrial fields because of poor development of suitable photon sources and optical devices. The developmental meaning, usable time and issue of a hard photon reduction lithography were surveyed as lithography in ultra-fine region below 0.1{mu}m. On hard photon analysis/evaluation technology, the industrial use of analysis, measurement and evaluation technologies by micro-beam was viewed, and optimum photon sources and optical systems were surveyed. Prediction of surface and surface layer modification by inner shell excitation, the future trend of this process and development of a vacuum ultraviolet light source were also surveyed. 383 refs., 153 figs., 17 tabs.

Physics at high energy photon photon colliders

International Nuclear Information System (INIS)

Chanowitz, M.S.

1994-06-01

I review the physic prospects for high energy photon photon colliders, emphasizing results presented at the LBL Gamma Gamma Collider Workshop. Advantages and difficulties are reported for studies of QCD, the electroweak gauge sector, supersymmetry, and electroweak symmetry breaking

High-fidelity frequency down-conversion of visible entangled photon pairs with superconducting single-photon detectors

International Nuclear Information System (INIS)

Ikuta, Rikizo; Kato, Hiroshi; Kusaka, Yoshiaki; Yamamoto, Takashi; Imoto, Nobuyuki; Miki, Shigehito; Yamashita, Taro; Terai, Hirotaka; Wang, Zhen; Fujiwara, Mikio; Sasaki, Masahide; Koashi, Masato

2014-01-01

We experimentally demonstrate a high-fidelity visible-to-telecommunicationwavelength conversion of a photon by using a solid-state-based difference frequency generation. In the experiment, one half of a pico-second visible entangled photon pair at 780 nm is converted to a 1522-nm photon. Using superconducting single-photon detectors with low dark count rates and small timing jitters, we observed a fidelity of 0.93±0.04 after the wavelength conversion

High performance electro-optical modulator based on photonic crystal and graphene

Science.gov (United States)

Malekmohammad, M.; Asadi, R.

2017-07-01

An electro-optical modulator is demonstrated based on Fano-resonance effect in an out-of-plane illumination of one-dimensional slab photonic crystal composed of two graphene layers. It has been shown that high sensitivity of the Fano-resonance and electro-refractive tuning of graphene layers provides a suitable condition to obtain an electro-optical modulator with low energy consumption (8 pJ) with contrast of 0.4.

High-efficiency single-photon source: The photonic wire geometry

DEFF Research Database (Denmark)

Claudon, J.; Bazin, Maela; Malik, Nitin S.

2009-01-01

We present a single-photon-source design based on the emission of a quantum dot embedded in a semiconductor (GaAs) nanowire. The nanowire ends are engineered (efficient metallic mirror and tip taper) to reach a predicted record-high collection efficiency of 90% with a realistic design. Preliminar...

Quantum communications system with integrated photonic devices

Science.gov (United States)

Nordholt, Jane E.; Peterson, Charles Glen; Newell, Raymond Thorson; Hughes, Richard John

2017-11-14

Security is increased in quantum communication (QC) systems lacking a true single-photon laser source by encoding a transmitted optical signal with two or more decoy-states. A variable attenuator or amplitude modulator randomly imposes average photon values onto the optical signal based on data input and the predetermined decoy-states. By measuring and comparing photon distributions for a received QC signal, a single-photon transmittance is estimated. Fiber birefringence is compensated by applying polarization modulation. A transmitter can be configured to transmit in conjugate polarization bases whose states of polarization (SOPs) can be represented as equidistant points on a great circle on the Poincare sphere so that the received SOPs are mapped to equidistant points on a great circle and routed to corresponding detectors. Transmitters are implemented in quantum communication cards and can be assembled from micro-optical components, or transmitter components can be fabricated as part of a monolithic or hybrid chip-scale circuit.

Temperature dependence of photonic crystals based on thermoresponsive magnetic fluids

International Nuclear Information System (INIS)

Pu Shengli; Bai Xuekun; Wang Lunwei

2011-01-01

The influence mechanisms of temperature on the band gap properties of the magnetic fluids based photonic crystals are elaborated. A method has been developed to obtain the temperature-dependent structure information (A sol /A) from the existing experimental data and then two critical parameters, i.e. the structure ratio (d/a) and the refractive index contrast (Δn) of the magnetic fluids photonic crystals are deduced for band diagram calculations. The temperature-dependent band gaps are gained for z-even and z-odd modes. Band diagram calculations display that the mid frequencies and positions of the existing forbidden bands are not very sensitive to the temperature, while the number of the forbidden bands at certain strengths of magnetic field may change with the temperature variation. The results presented in this work give a guideline for designing the potential photonic devices based on the temperature characteristics of the magnetic fluids based photonic crystals and are helpful for improving their quality. - Highlights: → Mechanisms of temperature dependence of magnetic fluids based photonic crystals are elaborated. → Properties of existing forbidden bands have relatively fine temperature stability. → Disappearance of existing forbidden band is found for some magnetic fields. → Emergence of new forbidden band with temperature is found for some magnetic fields.

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

Science.gov (United States)

Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

2017-12-13

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

Photonic crystals: towards nanoscale photonic devices

National Research Council Canada - National Science Library

Lourtioz, J.-M

2005-01-01

.... From this point of view, the emergence of photonic bandgap materials and photonic crystals at the end of the 1980s can be seen as a revenge to the benefit this time of optics and electromagnetism. In the same way as the periodicity of solid state crystals determines the energy bands and the conduction properties of electrons, the periodical structur...

Method of inserting fuel rod

International Nuclear Information System (INIS)

Kamimoto, Shuji; Imoo, Makoto; Tsuchida, Kenji.

1991-01-01

The present invention concerns a method of inserting a fuel rod upon automatic assembling, automatic dismantling and reassembling of a fuel assembly in a light water moderated reactor, as well as a device and components used therefor. That is, a fuel rod is inserted reliably to an aimed point of insertion by surrounding the periphery of the fuel rod to be inserted with guide rods, and thereby suppressing the movement of the fuel rod during insertion. Alternatively, a fuel rod is inserted reliably to a point of insertion by inserting guide rods at the periphery of the point of insertion for the fuel rod to be inserted thereby surrounding the point of insertion with the guide rods or fuel rods. By utilizing fuel rods already present in the fuel assembly as the guide rods described above, the fuel rod can be inserted reliably to the point of insertion with no additional devices. Dummy fuel rods are previously inserted in a fuel assembly which are then utilized as the above-mentioned guide rods to accurately insert the fuel rod to the point of insertion. (I.S.)

Highly air stable passivation of graphene based field effect devices.

Science.gov (United States)

Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

2015-02-28

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

Outcomes of single- vs double-cuff artificial urinary sphincter insertion in low- and high-risk profile male patients with severe stress urinary incontinence.

Science.gov (United States)

Ahyai, Sascha A; Ludwig, Tim A; Dahlem, Roland; Soave, Armin; Rosenbaum, Clemens; Chun, Felix K-H; Fisch, Margit; Schmid, Marianne; Kluth, Luis A

2016-10-01

To evaluate continence and complication rates of bulbar single-cuff (SC) and distal bulbar double-cuff (DC) insertion in male patients with severe stress urinary incontinence (SUI) according to whether the men were considered low or high risk for unfavourable artificial urinary sphincter (AUS) outcomes. In all, 180 male patients who underwent AUS implantation between 2009 and 2013 were followed according to institutional standards. Patients with previous pelvic radiation therapy, open bulbar urethral or UI surgery ('high risk') underwent distal bulbar DC (123 patients) insertion, all others ('low risk') had proximal bulbar SC (57) insertion. Primary and secondary endpoints consisted of continence and complication rates. Kaplan-Meier analysis determined explantation-free survival, and Cox regression models assessed risk factors for persistent UI and explantation. The median follow-up was 24 months. Whereas there was no significant difference in pad usage/objective continence after SC vs DC insertion, superior rates of subjective/social continence and less persistent UI were reported by the patients with DC devices (all P ≤ 0.02). Overall, device explantation (erosion, infection or mechanical failure) occurred in 12.8% of patients. While early ( 0.05), DC patients had a 5.7-fold higher risk of device explantation during late follow-up (P = 0.02) and significantly shorter explantation-free survival (log-rank, P = 0.003). Distal bulbar DC insertion in patients with a 'high-risk' profile (previous pelvic radiation, urethral surgery) leads to similar objective continence, but higher explantation rates when compared with patients considered 'low risk' with proximal bulbar SCs. Randomised controlled trials comparing both devices will be needed to determine whether the higher explanations rates are attributable to the DC device or to underlying risk factors. © 2016 The Authors BJU International © 2016 BJU International Published by John Wiley & Sons Ltd.

Fabrication of micro- and nanometre-scale polymer structures in liquid crystal devices for next generation photonics applications

Science.gov (United States)

Tartan, Chloe C.; Salter, Patrick S.; Booth, Martin J.; Morris, Stephen M.; Elston, Steve J.

2016-09-01

Direct Laser Writing (DLW) by two-photon photopolymerization (TPP) enables the fabrication of micron-scale polymeric structures in soft matter systems. The technique has implications in a broad range of optics and photonics; in particular fast-switching liquid crystal (LC) modes for the development of next generation display technologies. In this paper, we report two different methodologies using our TPP-based fabrication technique. Two explicit examples are provided of voltage-dependent LC director profiles that are inherently unstable, but which appear to be promising candidates for fast-switching photonics applications. In the first instance, 1 μm-thick periodic walls of polymer network are written into a planar aligned (parallel rubbed) nematic pi-cell device containing a nematic LC-monomer mixture. The structures are fabricated when the device is electrically driven into a fast-switching nematic LC state and aberrations induced by the device substrates are corrected for by virtue of the adaptive optics elements included within the DLW setup. Optical polarizing microscopy images taken post-fabrication reveal that polymer walls oriented perpendicular to the rubbing direction promote the stability of the so-called optically compensated bend mode upon removal of the externally applied field. In the second case, polymer walls are written in a nematic LC-optically adhesive glue mixture. A polymer- LCs-polymer-slices or `POLICRYPS' template is formed by immersing the device in acetone post-fabrication to remove any remaining non-crosslinked material. Injecting the resultant series of polymer microchannels ( 1 μm-thick) with a short-pitch, chiral nematic LC mixture leads to the spontaneous alignment of a fast-switching chiral nematic mode, where the helical axis lies parallel to the glass substrates. Optimal contrast between the bright and dark states of the uniform lying helix alignment is achieved when the structures are spaced at the order of the device thickness

The photonic nanowire: an emerging platform for highly efficient single-photon sources for quantum information applications

DEFF Research Database (Denmark)

Gregersen, Niels; Munsch, Mathieu; Malik, Nitin S.

2013-01-01

Efficient coupling between a localized quantum emitter and a well defined optical channel represents a powerful route to realize single-photon sources and spin-photon interfaces. The tailored fiber-like photonic nanowire embedding a single quantum dot has recently demonstrated an appealing...... potential. However, the device requires a delicate, sharp needle-like taper with performance sensitive to minute geometrical details. To overcome this limitation we demonstrate the photonic trumpet, exploiting an opposite tapering strategy. The trumpet features a strongly Gaussian far-field emission...

Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

DEFF Research Database (Denmark)

Xiao, Sanshui; Qiu, M.

2007-01-01

Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor is gr...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing.......Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...

On-chip photonic particle sensor

Science.gov (United States)

Singh, Robin; Ma, Danhao; Agarwal, Anu; Anthony, Brian

2018-02-01

We propose an on-chip photonic particle sensor design that can perform particle sizing and counting for various environmental applications. The sensor is based on micro photonic ring resonators that are able to detect the presence of the free space particles through the interaction with their evanescent electric field tail. The sensor can characterize a wide range of the particle size ranging from a few nano meters to micron ( 1 micron). The photonic platform offers high sensitivity, compactness, fast response of the device. Further, FDTD simulations are performed to analyze different particle-light interactions. Such a compact and portable platform, packaged with integrated photonic circuit provides a useful sensing modality in space shuttle and environmental applications.

High-performance spinning device for DVD-based micromechanical signal transduction

DEFF Research Database (Denmark)

Hwu, En-Te; Chen, Ching-Hsiu; Bosco, Filippo

2013-01-01

Here we report a high-throughput spinning device for nanometric scale measurements of microstructures with instrumentation details and experimental results. The readout technology implemented in the designed disc-like device is based on a DVD data storage optical pick-up unit (OPU). With a spinning...

[Rare problem with the insertion of a Supreme™ laryngeal mask airway device. Case of the trimester].

Science.gov (United States)

2014-03-01

A breast tumor was resected under general anesthesia. After induction, the airway was managed with a Supreme™ laryngeal mask airway device. The insertion of the laryngeal mask airway device, the insertion of the orogastric tube through the drain tube, as well as the mechanical ventilation, were very difficult from the beginning. On removing the laryngeal mask airway device to solve the problem, it was observed that the drain tube was broken, and the orogastric tube had passed into the anterior, laryngeal part of the device through the split. It was later found out that the laryngeal mask airway device, as well as the whole manufacturing batch, had suffered a design modification: the cuff was constructed with a softer material without reinforcement in the tip, and the drain tube had a heat-sealing defect that facilitated the break. The incident was reported to the local supplier and the manufacturer, and the defective batch of laryngeal mask airway devices was recalled. The incident was also reported to other hospitals via SENSAR, to warn other users of the potential dangers of the design modification in the Supreme™ laryngeal mask airway. Copyright © 2013 Sociedad Española de Anestesiología, Reanimación y Terapéutica del Dolor. Published by Elsevier España. All rights reserved.

Final-photon polarization in the scattering of photons by high-energy electrons

International Nuclear Information System (INIS)

Choi, J.; Choi, S.Y.; Ie, S.H.; Song, H.S.; Good, R.H. Jr.

1987-01-01

A general method for calculating the polarization of the outgoing photon beam in any reaction is presented. As an example the method is applied to the high-energy photon beam produced in Compton scattering of a laser beam by a high-energy electron beam. The Stokes parameters of the outgoing photon beam, relative to a unit vector normal to the photon momentum and including their dependence on the polarization of incident photon and electron beams, are obtained explicitly. It is expected that this method will be useful, both in photon production reactions and in the subsequent high-energy photon reactions

Photonic Structure-Integrated Two-Dimensional Material Optoelectronics

Directory of Open Access Journals (Sweden)

Tianjiao Wang

2016-12-01

Full Text Available The rapid development and unique properties of two-dimensional (2D materials, such as graphene, phosphorene and transition metal dichalcogenides enable them to become intriguing candidates for future optoelectronic applications. To maximize the potential of 2D material-based optoelectronics, various photonic structures are integrated to form photonic structure/2D material hybrid systems so that the device performance can be manipulated in controllable ways. Here, we first introduce the photocurrent-generation mechanisms of 2D material-based optoelectronics and their performance. We then offer an overview and evaluation of the state-of-the-art of hybrid systems, where 2D material optoelectronics are integrated with photonic structures, especially plasmonic nanostructures, photonic waveguides and crystals. By combining with those photonic structures, the performance of 2D material optoelectronics can be further enhanced, and on the other side, a high-performance modulator can be achieved by electrostatically tuning 2D materials. Finally, 2D material-based photodetector can also become an efficient probe to learn the light-matter interactions of photonic structures. Those hybrid systems combine the advantages of 2D materials and photonic structures, providing further capacity for high-performance optoelectronics.

Engineering photonic density of states using metamaterials

DEFF Research Database (Denmark)

Jacob, Z.; Kim, J.Y.; Naik, G.V.

2010-01-01

The photonic density of states (PDOS), like its electronic counterpart, is one of the key physical quantities governing a variety of phenomena and hence PDOS manipulation is the route to new photonic devices. The PDOS is conventionally altered by exploiting the resonance within a device such as a......The photonic density of states (PDOS), like its electronic counterpart, is one of the key physical quantities governing a variety of phenomena and hence PDOS manipulation is the route to new photonic devices. The PDOS is conventionally altered by exploiting the resonance within a device...... such as a microcavity or a bandgap structure like a photonic crystal. Here we show that nanostructured metamaterials with hyperbolic dispersion can dramatically enhance the photonic density of states paving the way for metamaterial-based PDOS engineering....

Hybrid Integrated Platforms for Silicon Photonics

Directory of Open Access Journals (Sweden)

John E. Bowers

2010-03-01

Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Research on Shore-Ship Photonic Link Performance for Two- Frequency-Band Signals

Science.gov (United States)

Zuo, Yanqin; Cong, Bo

2016-02-01

Ka and Ku bands links for shore-ship communications suffer limited bandwidth and high loss. In this paper, photonics-based links are proposed and modeled. The principle of phase modulation (PM) is elaborated and analyzed. It is showed that PM can effectively suppress high-order inter-modulation distortion (IMD), reduce the insert loss and improve the reliability of the system.

Qubit entanglement between ring-resonator photon-pair sources on a silicon chip

Science.gov (United States)

Silverstone, J. W.; Santagati, R.; Bonneau, D.; Strain, M. J.; Sorel, M.; O'Brien, J. L.; Thompson, M. G.

2015-01-01

Entanglement—one of the most delicate phenomena in nature—is an essential resource for quantum information applications. Scalable photonic quantum devices must generate and control qubit entanglement on-chip, where quantum information is naturally encoded in photon path. Here we report a silicon photonic chip that uses resonant-enhanced photon-pair sources, spectral demultiplexers and reconfigurable optics to generate a path-entangled two-qubit state and analyse its entanglement. We show that ring-resonator-based spontaneous four-wave mixing photon-pair sources can be made highly indistinguishable and that their spectral correlations are small. We use on-chip frequency demultiplexers and reconfigurable optics to perform both quantum state tomography and the strict Bell-CHSH test, both of which confirm a high level of on-chip entanglement. This work demonstrates the integration of high-performance components that will be essential for building quantum devices and systems to harness photonic entanglement on the large scale. PMID:26245267

New developments on the generation of arbitrary polarized radiation from insertion devices

International Nuclear Information System (INIS)

Elleaume, P.

1991-01-01

The complete description of the polarization of a beam of radiation is described in terms of the total energy and three polarization rates. The polarization characteristics from conventional undulators and wigglers is recalled. A presentation is made of some new insertion devices that were proposed and/or built to generate circular polarization and more generally to improve the control of polarization. They are the asymmetric and elliptical wigglers and the helical and crossed undulators

Diffusion Based Photon Mapping

DEFF Research Database (Denmark)

Schjøth, Lars; Fogh Olsen, Ole; Sporring, Jon

2007-01-01

. To address this problem we introduce a novel photon mapping algorithm based on nonlinear anisotropic diffusion. Our algorithm adapts according to the structure of the photon map such that smoothing occurs along edges and structures and not across. In this way we preserve the important illumination features......, while eliminating noise. We call our method diffusion based photon mapping....

Diffusion Based Photon Mapping

DEFF Research Database (Denmark)

Schjøth, Lars; Olsen, Ole Fogh; Sporring, Jon

2006-01-01

. To address this problem we introduce a novel photon mapping algorithm based on nonlinear anisotropic diffusion. Our algorithm adapts according to the structure of the photon map such that smoothing occurs along edges and structures and not across. In this way we preserve the important illumination features......, while eliminating noise. We call our method diffusion based photon mapping....

Photonic slab heterostructures based on opals

Science.gov (United States)

Palacios-Lidon, Elisa; Galisteo-Lopez, Juan F.; Juarez, Beatriz H.; Lopez, Cefe

2004-09-01

In this paper the fabrication of photonic slab heterostructures based on artificial opals is presented. The innovated method combines high-quality thin-films growing of opals and silica infiltration by Chemical Vapor Deposition through a multi-step process. By varying structure parameters, such as lattice constant, sample thickness or refractive index, different heterostructures have been obtained. The optical study of these systems, carried out by reflectance and transmittance measurements, shows that the prepared samples are of high quality further confirmed by Scanning Electron Microscopy micrographs. The proposed novel method for sample preparation allows a high control of the involved structure parameters, giving the possibility of tunning their photonic behavior. Special attention in the optical response of these materials has been addressed to the study of planar defects embedded in opals, due to their importance in different photonic fields and future technological applications. Reflectance and transmission measurements show a sharp resonance due to localized states associated with the presence of planar defects. A detailed study of the defect mode position and its dependance on defect thickness and on the surrounding photonic crystal is presented as well as evidence showing the scalability of the problem. Finally, it is also concluded that the proposed method is cheap and versatile allowing the preparation of opal-based complex structures.

Improvement of insertion loss and quality factor of flexural plate-wave-based alpha-fetoprotein biosensor using groove-type reflective grating structures

Science.gov (United States)

Lin, Chang-Yu; Huang, I.-Yu; Lan, Je-Wei

2013-01-01

Conventional flexural plate-wave (FPW) transducers have limited applications in biomedical sensing due to their disadvantages such as high insertion loss and low quality factor. To overcome these shortcomings, we propose a FPW transducer on a low phase velocity insulator membrane (5-μm-thick SiO2) with a novel groove-type reflective grating structure design. Additionally, a cystamine self-assembly monolayer and a glutaraldehyde cross-linking layer are implemented on the backside of the FPW device to immobilize alpha-fetoprotein (AFP) antibody. A FPW-based AFP biosensor with low detection limit (5 ng/mL) can be achieved and used to measure the extreme low concentration of AFP antigen in human serum for early detection of hepatocellular carcinoma. The proposed FPW-based AFP biosensor also demonstrates a very high quality factor (206), low insertion loss (-40.854 dB), low operating frequency (6.388 MHz), and high sensing linearity (90.7%).

Perturbative modeling of Bragg-grating-based biosensors in photonic-crystal fibers

DEFF Research Database (Denmark)

Burani, Nicola; Lægsgaard, Jesper

2005-01-01

We present a modeling study carried out to support the design of a novel, to our knowledge, kind of photonic-crystal fiber (PCF)-based sensor. This device, based on a PCF Bragg grating, detects the presence of selected single-stranded DNA molecules, hybridized to a biofilm in the air holes of the...

High thermal stability in W/MgO/CoFeB/W/CoFeB/W stacks via ultrathin W insertion with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

Liu, Yi; Yu, Tao [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Zhu, Zhengyong; Zhong, Huicai [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Khamis, Khamis Masoud [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Zhu, Kaigui, E-mail: kgzhu@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Micro-Nano Measurement-Manipulation and Physics, Ministry of Education, Beihang University, Beijing 100191 (China)

2016-07-15

The perpendicular magnetic anisotropy (PMA) of a series of top MgO/CoFeB/W stacks were studied. In these stacks, the thickness of CoFeB is limited in a range of 1.1–2.2 nm. It was found that the stack can still maintain PMA in a 1.9 nm thick CoFeB free layer. Besides, we investigated the thermal stability factor ∆ of a spin transfer torque magnetic random access memory (STT-MRAM) by inserting an ultra-thin W film of 0.8 nm between two CoFeB films. The result shows a clear PMA behavior for the samples with CoFeB thickness up to 2.5 nm, and an in-plane magnetic anisotropy (IMA) when the CoFeB is thicker than 2.5 nm. Moreover, the thermal stability factor ∆ of the CoFeB stack with W insertion is about 132 for a 50 nm size STT-MRAM device, which is remarkably improved compared to 112 for a sample without W insertion. Our results represent an alternative way to realize the endurance at high annealing temperature, high-density and high ∆ in STT-MRAM device by ultra-thin W insertion. - Highlights: • The MgO/CoFeB/W multilayer can still maintain PMA in a CoFeB thickness of 1.9 nm. • The sample with 2.5 nm thickness of CoFeB by W insertion can still maintain PMA. • The sample with W insertion can still maintain PMA until the annealing temperature as high as 350 °C. • The thermal stability factor ∆ of sample with W insertion could be increase to about 132 for a 50 nm size STT-MRAM device.

COMPARATIVE STUDY OF EARLY POSTPARTUM IUCD INSERTION TO INTERVAL IUCD INSERTION

Directory of Open Access Journals (Sweden)

Shibani Devi

2016-07-01

Full Text Available INTRODUCTION According to National Family Health Survey-3, Indian women have 13% unmet need for contraception and according to District Level Household & Facility Survey-3, it is 21.3% in the postpartum period. Postpartum intrauterine contraceptive device insertion - both immediately post-placental delivery and somewhat later, but within 48 hours after delivery are options which merit consideration as the woman is likely to have a high motivation for accepting contraception and the healthcare centre provides a convenient setting for insertion of IUCD. AIM Comparison of efficacy and complications of IUCD insertions in post-placental with interval period: 6-month followup. METHOD This perspective study was conducted among 100 women: - 50 women had IUCD inserted within 10 minutes of placental delivery and 50 had insertion more than 6 weeks after delivery. They were followed till 6 months post insertion and were compared regarding early and late complications, continuation rates and expulsion rates. RESULT At the end of six months, we found higher occurrence of lower abdominal pain, heavy menstrual bleeding in case of interval insertion as compared to post-placental insertion which was statistically significant (p value-0.04 & 0.007 respectively. However, the expulsion rates of post-placental IUCD were somewhat elevated (14% compared to interval insertions (2%. Continuation rates at the end of 6 months in both the groups were 82% and 86% respectively which is comparable. CONCLUSION Post-placental IUCD is thus found to be an ideal method to meet the unmet need of postpartum women as it is easily accessible and convenient for both women and their health care providers, is associated with less discomfort and fewer side effects and allow women to obtain safe, long acting, highly effective contraception while still in the health care system.

Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell

DEFF Research Database (Denmark)

Jeannin, Mathieu; Cremel, Thibault; Häyrynen, Teppo

2017-01-01

Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature. In this paper, we demonstrate a bottom-up approach...

An automatic device for sample insertion and extraction to/from reactor irradiation facilities

International Nuclear Information System (INIS)

Alloni, L.; Venturelli, A.; Meloni, S.

1990-01-01

At the previous European Triga Users Conference in Vienna,a paper was given describing a new handling tool for irradiated samples at the L.E.N.A plant. This tool was the first part of an automatic device for the management of samples to be irradiated in the TRIGA MARK ii reactor and successively extracted and stored. So far sample insertion and extraction to/from irradiation facilities available on reactor top (central thimble,rotatory specimen rack and channel f),has been carried out manually by reactor and health-physics operators using the ''traditional'' fishing pole provided by General Atomic, thus exposing reactor personnel to ''unjustified'' radiation doses. The present paper describes the design and the operation of a new device, a ''robot''type machine,which, remotely operated, takes care of sample insertion into the different irradiation facilities,sample extraction after irradiation and connection to the storage pits already described. The extraction of irradiated sample does not require the presence of reactor personnel on the reactor top and,therefore,radiation doses are strongly reduced. All work from design to construction has been carried out by the personnel of the electronic group of the L.E.N.A plant. (orig.)

Quantum dash based single section mode locked lasers for photonic integrated circuits.

Science.gov (United States)

Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

2014-05-05

We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs.

Development and calibration of a portable detection device for in vivo measurement of high-energy photon emitters incorporated by humans

International Nuclear Information System (INIS)

Soares, A.B.; Arbach, M.N.; Lucena, E.A.; Dantas, A.L.A.; Dantas, B.M.

2017-01-01

This work presents the evaluation of the applicability and sensitivity of a portable detection device specially designed for in vivo measurement of high-energy photon emitters in the human body. The calibration was performed at the In-Vivo Monitoring Laboratory of the IRD. The equipment consists of a lead-collimated NaI (Tl) 3″ x 3″ scintillation detector assembled on a tripod. The detector and its compact associated electronics are connected via USB cable to a portable PC. Spectrum acquisition and analysis is controlled by specific commercially available software. The calibration was performed using a standard liquid source of 152 Eu contained in 3 L polyethylene bottles. The evaluation of the system is based on the estimation of the minimum committed effective doses associated to the minimum detectable activities, calculated using current biokinetic and dosimetric models available in the literature. The dose detection limits for selected radionuclides of interest in an emergency scenario have shown to be far below 1 mSv allowing the system to be useful in accident situations. (author)

Development and calibration of a portable detection device for in vivo measurement of high-energy photon emitters incorporated by humans

Energy Technology Data Exchange (ETDEWEB)

Soares, A.B.; Arbach, M.N.; Lucena, E.A.; Dantas, A.L.A.; Dantas, B.M., E-mail: alexandrebaso@globo.com [Instituto de Radioproteção e Dosimetria (IRD/CNEN-RJ), Rio de Janeiro, RJ (Brazil). Lab. de Monitoração Interna

2017-07-01

This work presents the evaluation of the applicability and sensitivity of a portable detection device specially designed for in vivo measurement of high-energy photon emitters in the human body. The calibration was performed at the In-Vivo Monitoring Laboratory of the IRD. The equipment consists of a lead-collimated NaI (Tl) 3″ x 3″ scintillation detector assembled on a tripod. The detector and its compact associated electronics are connected via USB cable to a portable PC. Spectrum acquisition and analysis is controlled by specific commercially available software. The calibration was performed using a standard liquid source of {sup 152}Eu contained in 3 L polyethylene bottles. The evaluation of the system is based on the estimation of the minimum committed effective doses associated to the minimum detectable activities, calculated using current biokinetic and dosimetric models available in the literature. The dose detection limits for selected radionuclides of interest in an emergency scenario have shown to be far below 1 mSv allowing the system to be useful in accident situations. (author)

Efficient DNA fingerprinting based on the targeted sequencing of active retrotransposon insertion sites using a bench-top high-throughput sequencing platform.

Science.gov (United States)

Monden, Yuki; Yamamoto, Ayaka; Shindo, Akiko; Tahara, Makoto

2014-10-01

In many crop species, DNA fingerprinting is required for the precise identification of cultivars to protect the rights of breeders. Many families of retrotransposons have multiple copies throughout the eukaryotic genome and their integrated copies are inherited genetically. Thus, their insertion polymorphisms among cultivars are useful for DNA fingerprinting. In this study, we conducted a DNA fingerprinting based on the insertion polymorphisms of active retrotransposon families (Rtsp-1 and LIb) in sweet potato. Using 38 cultivars, we identified 2,024 insertion sites in the two families with an Illumina MiSeq sequencing platform. Of these insertion sites, 91.4% appeared to be polymorphic among the cultivars and 376 cultivar-specific insertion sites were identified, which were converted directly into cultivar-specific sequence-characterized amplified region (SCAR) markers. A phylogenetic tree was constructed using these insertion sites, which corresponded well with known pedigree information, thereby indicating their suitability for genetic diversity studies. Thus, the genome-wide comparative analysis of active retrotransposon insertion sites using the bench-top MiSeq sequencing platform is highly effective for DNA fingerprinting without any requirement for whole genome sequence information. This approach may facilitate the development of practical polymerase chain reaction-based cultivar diagnostic system and could also be applied to the determination of genetic relationships. © The Author 2014. Published by Oxford University Press on behalf of Kazusa DNA Research Institute.

Vaginal flora changes on Pap smears after insertion of levonorgestrel-releasing intrauterine device.

Science.gov (United States)

Donders, Gilbert G G; Berger, Judith; Heuninckx, Hélène; Bellen, Gert; Cornelis, Ann

2011-04-01

The levonorgestrel intrauterine system (LNG-IUS) combines a uterine foreign body and the continuous release of low-dose levonorgestrel for contraception. Its influence on the rate of vulvovaginal infections and flora disturbance is insufficiently known, but important for contraceptive advice in women, especially those who develop recurrent vaginosis or Candida vulvovaginitis. Slides of 286 women who had a Pap smear taken before and 1 to 2 years after placement of a LNG-IUS were blindly reviewed for the presence of abnormal vaginal flora (AVF), bacterial vaginosis (BV), aerobic vaginitis (AV) and Candida vaginitis (CV). Prior to insertion, there were no differences in vaginal flora abnormalities between women using different kinds of contraception. LNG-IUS users did not have different rates of AVF, BV, AV or CV, but the general risk to develop any infection was increased. Uterine bleeding after insertion did not seem to predict a different flora type. We found that Pap smears suggested more vaginal infections after 1 year of LNG-IUS use than prior to insertion of the device. Copyright © 2011 Elsevier Inc. All rights reserved.

Electron beam and mechanical lithographies as enabling factors for organic-based device fabrication

International Nuclear Information System (INIS)

Visconti, P.; Pisignano, D.; Della Torre, A.; Persano, L.; Maruccio, G.; Biasco, A.; Cingolani, R.; Rinaldi, R.

2005-01-01

Organic-based photonics and molecular electronics are attracting an increasing interest in modern science. The realization of high-resolution master structures by electron beam lithography (EBL) and their transfer to different organic functional materials by mechanical lithographies allow to fully exploit the wide flexibility of molecular systems for opto- and nanoelectronic devices. Planar nanojunctions, consisting of two metallic electrodes separated by an insulating medium, permit to test the molecular conduction properties. Since the typical size of a biomolecule is of the order of a few nanometer, hybrid molecular electronic (HME) devices need metallic electrodes separated by a nanometer-scale channel. Conversely, photonic applications often require 100 nm to 1 μm features on large areas. In this work, we report on the fabrication of both large-area periodic master structures with resolution down to 200 nm, and planar metallic electrodes with sub-10 nm separation obtained by EBL followed by metal electroplating deposition. The fabricated 3-terminal bio-nanodevices show a transistor-like behaviour with a maximum voltage gain of 0.76. Moreover, we developed a number of mechanical patterning methods, including soft hot embossing, rapid prototyping, sub-micrometer fluidics, high- and room-temperature nanoimprinting, to fabricate planar nanostructures on both biomolecular and organic materials. These allowed us a high-fidelity pattern transfer up to 100-nm scale resolution, without reducing the emission yields of light-emitting organics, thus opening the way to the one-step realization of organic-based confined optoelectronic devices

Two-dimensional topological photonics

Science.gov (United States)

Khanikaev, Alexander B.; Shvets, Gennady

2017-12-01

Originating from the studies of two-dimensional condensed-matter states, the concept of topological order has recently been expanded to other fields of physics and engineering, particularly optics and photonics. Topological photonic structures have already overturned some of the traditional views on wave propagation and manipulation. The application of topological concepts to guided wave propagation has enabled novel photonic devices, such as reflection-free sharply bent waveguides, robust delay lines, spin-polarized switches and non-reciprocal devices. Discrete degrees of freedom, widely used in condensed-matter physics, such as spin and valley, are now entering the realm of photonics. In this Review, we summarize the latest advances in this highly dynamic field, with special emphasis on the experimental work on two-dimensional photonic topological structures.

Compact four-channel terahertz demultiplexer based on directional coupling photonic crystal

Science.gov (United States)

Jiu-Sheng, Li; Han, Liu; Le, Zhang

2015-09-01

Electromagnetic polarization conveys valuable information for signal processing. Manipulation of terahertz wavelength demultiplexer exhibits tremendous potential in developing application of terahertz science and technology. We propose an approach to separate efficiently four frequencies terahertz waves based on three cascaded directional coupling two-dimensional photonic crystal waveguides. Both plane wave expansion method and finite-difference time-domain method are used to calculate and analyze the characteristics of the proposed device. The simulation results show that the designed terahertz wavelength demultiplexer can split four different wavelengths of terahertz wave into different propagation directions with high transmittance and low crosstalk. The present device is very compact and the total size is 6.8×10.6 mm2. This enables the terahertz wavelength demultiplexer to be used in terahertz wave system and terahertz wave integrated circuit fields.

Quantum optics with quantum dots in photonic nanowires

DEFF Research Database (Denmark)

Claudon, Julien; Munsch, Matthieu; Bleuse, Joel

2012-01-01

Besides microcavities and photonic crystals, photonic nanowires have recently emerged as a novel resource for solidstate quantum optics. We will review recent studies which demonstrate an excellent control over the spontaneous emission of InAs quantum dots (QDs) embedded in single-mode Ga...... quantum optoelectronic devices. Quite amazingly, this approach has for instance permitted (unlike microcavity-based approaches) to combine for the first time a record-high efficiency (72%) and a negligible g(2) in a QD single photon source....

Bio-Inspired Photon Absorption and Energy Transfer for Next Generation Photovoltaic Devices

Science.gov (United States)

Magsi, Komal

Nature's solar energy harvesting system, photosynthesis, serves as a model for photon absorption, spectra broadening, and energy transfer. Photosynthesis harvests light far differently than photovoltaic cells. These differences offer both engineering opportunity and scientific challenges since not all of the natural photon absorption mechanisms have been understood. In return, solar cells can be a very sensitive probe for the absorption characteristics of molecules capable of transferring charge to a conductive interface. The objective of this scientific work is the advancement of next generation photovoltaics through the development and application of natural photo-energy transfer processes. Two scientific methods were used in the development and application of enhancing photon absorption and transfer. First, a detailed analysis of photovoltaic front surface fluorescent spectral modification and light scattering by hetero-structure was conducted. Phosphor based spectral down-conversion is a well-known laser technology. The theoretical calculations presented here indicate that parasitic losses and light scattering within the spectral range are large enough to offset any expected gains. The second approach for enhancing photon absorption is based on bio-inspired mechanisms. Key to the utilization of these natural processes is the development of a detailed scientific understanding and the application of these processes to cost effective systems and devices. In this work both aspects are investigated. Dye type solar cells were prepared and tested as a function of Chlorophyll (or Sodium-Copper Chlorophyllin) and accessory dyes. Forster has shown that the fluorescence ratio of Chlorophyll is modified and broadened by separate photon absorption (sensitized absorption) through interaction with nearby accessory pigments. This work used the dye type solar cell as a diagnostic tool by which to investigate photon absorption and photon energy transfer. These experiments shed

An assessment of the effects of radiation on permanent magnet material in the ALS [Advanced Light Source] insertion devices

International Nuclear Information System (INIS)

Hassenzahl, W.V.; Jenkins, T.M.; Namito, Y.; Nelson, W.R.; Swanson, W.P.

1989-08-01

Electrons that are lost from the beam during normal operation of a synchrotron radiation source and during a beam dump at the end of a run produce both ionizing radiation and neutrons. This radiation has the potential for damaging sensitive materials, in particular those that need to be very close to the beam. The wigglers and undulators for the Advanced Light Source (ALS) at LBL will use magnetic materials such as the very high performance neodymium-iron-boron, which will be as close as 1 cm away from the electron beam during operation. This material, which is preferred because of its high remanence, is known to be more sensitive to radiation than some other magnetic materials. Simple energy loss estimates and the EGS4 code were used to estimate the radiation levels in the ALS insertion devices in the regions of the magnetic materials. The radiation levels were estimated for both aluminum and stainless steel vacuum chambers to determine if one would provide significantly better shielding. We conclude that Nd-Fe-B can be used in the ALS insertion devices and that there is little difference in the radiation levels for aluminum and stainless vacuum vessels. 8 refs., 7 figs., 1 tab

Photonic Crystal Biosensor Based on Optical Surface Waves

Directory of Open Access Journals (Sweden)

Giovanni Dietler

2013-02-01

Full Text Available A label-free biosensor device based on registration of photonic crystal surface waves is described. Angular interrogation of the optical surface wave resonance is used to detect changes in the thickness of an adsorbed layer, while an additional simultaneous detection of the critical angle of total internal reflection provides independent data of the liquid refractive index. The abilities of the device are demonstrated by measuring of biotin molecule binding to a streptavidin monolayer, and by measuring association and dissociation kinetics of immunoglobulin G proteins. Additionally, deposition of PSS / PAH polyelectrolytes is recorded in situ resulting calculation of PSS and PAH monolayer thicknesses separately.

High heat flux device of thermonuclear device

International Nuclear Information System (INIS)

Tachikawa, Nobuo.

1994-01-01

The present invention provides an equipments for high heat flux device (divertor) of a thermonuclear device, which absorbs thermal deformation during operation, has a high installation accuracy, and sufficiently withstands for thermal stresses. Namely, a heat sink member is joined to a structural base. Armour tiles are joined on the heat sink member. Cooling pipes are disposed between the heat sink member and the armour tiles. With such a constitution, the heat sink member using a highly heat conductive material having ductility, such as oxygen free copper, the cooling pipes using a material having excellent high temperature resistance and excellent elongation, such as aluminum-dispersed reinforced copper, and the armour tiles are completely joined on the structural base. Therefore, when thermal deformation tends to cause in the high heat flux device such as a divertor, cooling pipes cause no plastic deformation because of their high temperature resistance, but the heat sink member such as a oxygen free copper causes plastic deformation to absorb thermal deformation. As a result, the high heat flux device such as a divertor causes no deformation. (I.S.)

Validation of photon-heating calculations in irradiation reactor with the experimental AMMON program and the CARMEN device

International Nuclear Information System (INIS)

Lemaire, Matthieu

2015-01-01

The temperature in the different core structures of Material-Testing Reactors (MTR) is a key physical parameter for MTRs' performance and safety. In nuclear reactors, where neutron and photon flux are sustained by fission chain reactions, neutrons and photons steadily deposit energy in the structures they cross and lead to a temperature rise in these structures. In non-fissile core structures (such as material samples, experimental devices, control rods, fuel claddings, and so on), the main part of nuclear heating is induced by photon interactions. This photon heating must therefore be well calculated as it is a key input parameter for MTR thermal studies, whose purpose is for instance to help determine the proper sizing of cooling power, electrical heaters and insulation gaps in MTR irradiation devices. The Jules Horowitz Reactor (JHR) is the next international MTR under construction in the south of France at CEA Cadarache research center (French Alternative Energies and Atomic Energy Commission). The JHR will be a major research infrastructure for the test of structural material and fuel behavior under irradiation. It will also produce from 25% to 50% of the European demand of medical radioisotopes for diagnostic purposes. High levels of nuclear heating are expected in the JHR core, with an absorbed-dose rate up to 20 watts per hafnium gram at nominal power (100 MW). Compared to a Pressurized-Water Reactor (PWR), the JHR is made of a specific array of materials (aluminum rack, beryllium reflector, hafnium control rods) and the feedback on photon-heating calculations with these features is limited. It is therefore necessary to validate photon-heating calculation tools (calculation codes and the European nuclear-data JEFF3.1.1 library) for use in the JHR, that is, it is necessary to determine the biases and uncertainties that are relevant for the photon-heating values calculated with these tools in the JHR. This topic constitutes the core of the present

High Efficiency Optical MEMS by the Integration of Photonic Lattices with Surface MEMS

Energy Technology Data Exchange (ETDEWEB)

FLEMING, JAMES G.; LIN, SHAWN-YU; MANI, SEETHAMBAL S.; RODGERS, M. STEVEN; DAGEL, DARYL J.

2002-11-01

This report outlines our work on the integration of high efficiency photonic lattice structures with MEMS (MicroElectroMechanical Systems). The simplest of these structures were based on 1-D mirror structures. These were integrated into a variety of devices, movable mirrors, switchable cavities and finally into Bragg fiber structures which enable the control of light in at least 2 dimensions. Of these devices, the most complex were the Bragg fibers. Bragg fibers consist of hollow tubes in which light is guided in a low index media (air) and confined by surrounding Bragg mirror stacks. In this work, structures with internal diameters from 5 to 30 microns have been fabricated and much larger structures should also be possible. We have demonstrated the fabrication of these structures with short wavelength band edges ranging from 400 to 1600nm. There may be potential applications for such structures in the fields of integrated optics and BioMEMS. We have also looked at the possibility of waveguiding in 3 dimensions by integrating defects into 3-dimensional photonic lattice structures. Eventually it may be possible to tune such structures by mechanically modulating the defects.

Photonic-crystal switch divider based on Ge2Sb2Te5 thin films.

Science.gov (United States)

Ma, Beijiao; Zhang, Peiqing; Wang, Hui; Zhang, Tengyu; Zeng, Jianghui; Zhang, Qian; Wang, Guoxiang; Xu, Peipeng; Zhang, Wei; Dai, Shixun

2016-11-10

A three-port phase-change photonic-crystal switch divider based on Ge2Sb2Te5 chalcogenide thin film was proposed. The chalcogenide material used was determined to have a high refractive index and fast phase-change speed by using laser radiation. The structure with a T-junction cavity was used to achieve three switch functions: switching "ON" in only one output port, switching "OFF" in both output ports, and dividing signals into two output ports. The transmission properties of the designed device at 2.0 μm were studied by the finite difference time domain method, which showed that the switch divider can achieve very high switching efficiency by optimizing T-junction cavity parameters. The scaling laws of photonic crystals revealed that the operating wavelength of the designed structure can be easily extended to another wavelength in the midinfrared region.

Single Photon Counting Large Format Imaging Sensors with High Spatial and Temporal Resolution

Science.gov (United States)

Siegmund, O. H. W.; Ertley, C.; Vallerga, J. V.; Cremer, T.; Craven, C. A.; Lyashenko, A.; Minot, M. J.

High time resolution astronomical and remote sensing applications have been addressed with microchannel plate based imaging, photon time tagging detector sealed tube schemes. These are being realized with the advent of cross strip readout techniques with high performance encoding electronics and atomic layer deposited (ALD) microchannel plate technologies. Sealed tube devices up to 20 cm square have now been successfully implemented with sub nanosecond timing and imaging. The objective is to provide sensors with large areas (25 cm2 to 400 cm2) with spatial resolutions of 5 MHz and event timing accuracy of 100 ps. High-performance ASIC versions of these electronics are in development with better event rate, power and mass suitable for spaceflight instruments.

SiPM as photon counter for Cherenkov detectors

International Nuclear Information System (INIS)

Roy, B.J.; Orth, H.; Schwarz, C.; Wilms, A.; Peters, K.

2009-01-01

Silicon photomultipliers (SiPMs) are very new type of photon counting devices that show great promise to be used as detection device in combination with scintillators/ Cherenkov radiators. SiPM is essentially an avalanche photo-diode operated in limited Geiger mode. They have been considered as potential readout devices for DIRC counter of the PANDA detector which is one of the large experiment at FAIR- the new international facility to be built at GSI, Darmstadt. In addition, the potential use of SiPM includes medical diagnosis, fluorescence measurement and high energy physics experiments. The SiPM module is a photon counting device capable of low light level detection. It is essentially an opto-semiconductor device with excellent photon counting capability and possesses great advantages over the conventional PMTs because of low voltage operation and insensitivity to magnetic fields. In many of the high energy physics experiments, the photon sensors are required to operate in high magnetic fields precluding the use of conventional PMTs. This problem can be over come with the use of SiPMs. With this motivation in mind, we have developed a SiPM test facility and have tested several commercially available SiPM for their performance study and comparison with other photon counting devices

Fabrication of Refractive Index Tunable Polydimethylsiloxane Photonic Crystal for Biosensor Application

Science.gov (United States)

Raman, Karthik; Murthy, T. R. Srinivasa; Hegde, G. M.

Photonic crystal based nanostructures are expected to play a significant role in next generation nanophotonic devices. Recent developments in two-dimensional (2D) photonic crystal based devices have created widespread interest as such planar photonic structures are compatible with conventional microelectronic and photonic devices. Various optical components such as waveguides, resonators, modulators and demultiplexers have been designed and fabricated based on 2D photonic crystal geometry. This paper presents the fabrication of refractive index tunable Polydimethylsiloxane (PDMS) polymer based photonic crystals. The advantages of using PDMS are mainly its chemical stability, bio-compatibility and the stack reduces sidewall roughness scattering. The PDMS structure with square lattice was fabricated by using silicon substrate patterned with SU8-2002 resist. The 600 nm period grating of PDMS is then fabricated using Nano-imprinting. In addition, the refractive index of PDMS is modified using certain additive materials. The resulting photonic crystals are suitable for application in photonic integrated circuits and biological applications such as filters, cavities or microlaser waveguides.

Facility target insert shielding assessment

Energy Technology Data Exchange (ETDEWEB)

Mocko, Michal [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2015-10-06

Main objective of this report is to assess the basic shielding requirements for the vertical target insert and retrieval port. We used the baseline design for the vertical target insert in our calculations. The insert sits in the 12”-diameter cylindrical shaft extending from the service alley in the top floor of the facility all the way down to the target location. The target retrieval mechanism is a long rod with the target assembly attached and running the entire length of the vertical shaft. The insert also houses the helium cooling supply and return lines each with 2” diameter. In the present study we focused on calculating the neutron and photon dose rate fields on top of the target insert/retrieval mechanism in the service alley. Additionally, we studied a few prototypical configurations of the shielding layers in the vertical insert as well as on the top.

Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

Ultra-high-speed Optical Signal Processing using Silicon Photonics

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

Single-photon superradiance and cooperative Lamb shift in an optoelectronic device (Conference Presentation)

Science.gov (United States)

Sirtori, Carlo

2017-02-01

Superradiance is one of the many fascinating phenomena predicted by quantum electrodynamics that have first been experimentally demonstrated in atomic systems and more recently in condensed matter systems like quantum dots, superconducting q-bits, cyclotron transitions and plasma oscillations in quantum wells (QWs). It occurs when a dense collection of N identical two-level emitters are phased via the exchange of photons, giving rise to enhanced light-matter interaction, hence to a faster emission rate. Of great interest is the regime where the ensemble interacts with one photon only and therefore all of the atoms, but one, are in the ground state. In this case the quantum superposition of all possible configurations produces a symmetric state that decays radiatively with a rate N times larger than that of the individual oscillators. This phenomenon, called single photon superradiance, results from the exchange of real photons among the N emitters. Yet, to single photon superradiance is also associated another collective effect that renormalizes the emission frequency, known as cooperative Lamb shift. In this work, we show that single photon superradiance and cooperative Lamb shift can be engineered in a semiconductor device by coupling spatially separated plasma resonances arising from the collective motion of confined electrons in QWs. These resonances hold a giant dipole along the growth direction z and have no mutual Coulomb coupling. They thus behave as a collection of macro-atoms on different positions along the z axis. Our device is therefore a test bench to simulate the low excitation regime of quantum electrodynamics.

Numerical analysis of a polysilicon-based resistive memory device

KAUST Repository

Berco, Dan

2018-03-08

This study investigates a conductive bridge resistive memory device based on a Cu top electrode, 10-nm polysilicon resistive switching layer and a TiN bottom electrode, by numerical analysis for $$10^{3}$$103 programming and erase simulation cycles. The low and high resistive state values in each cycle are calculated, and the analysis shows that the structure has excellent retention reliability properties. The presented Cu species density plot indicates that Cu insertion occurs almost exclusively along grain boundaries resulting in a confined isomorphic conductive filament that maintains its overall shape and electric properties during cycling. The superior reliability of this structure may thus be attributed to the relatively low amount of Cu migrating into the RSL during initial formation. In addition, the results show a good match and help to confirm experimental measurements done over a previously demonstrated device.

Topological photonic orbital-angular-momentum switch

Science.gov (United States)

Luo, Xi-Wang; Zhang, Chuanwei; Guo, Guang-Can; Zhou, Zheng-Wei

2018-04-01

The large number of available orbital-angular-momentum (OAM) states of photons provides a unique resource for many important applications in quantum information and optical communications. However, conventional OAM switching devices usually rely on precise parameter control and are limited by slow switching rate and low efficiency. Here we propose a robust, fast, and efficient photonic OAM switch device based on a topological process, where photons are adiabatically pumped to a target OAM state on demand. Such topological OAM pumping can be realized through manipulating photons in a few degenerate main cavities and involves only a limited number of optical elements. A large change of OAM at ˜10q can be realized with only q degenerate main cavities and at most 5 q pumping cycles. The topological photonic OAM switch may become a powerful device for broad applications in many different fields and motivate a topological design of conventional optical devices.

Investigation and realization of an automatic device for the control and test of a photon tagging system

International Nuclear Information System (INIS)

Fallou, J.L.

1987-12-01

An intelligent control/test equipment for a monoenergetic photon production system was developed. The device enables simulations to be done outside experimental runs. Operation can be entirely automatic, or controlled by the experimenters. The device is modular and conforms to CAMAC standards. The architecture of the system is based around a local bus which comprises a central unit and its memory; a programmable pulse generator; a switching circuit to test and control the various paths; and a unit to communicate with the acquisition system [fr

High-brightness fiber-coupled pump laser development

Science.gov (United States)

Price, Kirk; Karlsen, Scott; Leisher, Paul; Martinsen, Robert

2010-02-01

We report on the continued development of high brightness laser diode modules at nLIGHT Photonics. These modules, based on nLIGHT's PearlTM product platform, demonstrate excellence in output power, brightness, wavelength stabilization, and long wavelength performance. This system, based on 14 single emitters, is designed to couple diode laser light into a 105 μm fiber at an excitation NA of under 0.14. We demonstrate over 100W of optical power at 9xx nm with a diode brightness exceeding 20 MW/cm2-str with an operating efficiency of approximately 50%. Additional results show over 70W of optical coupled at 8xx nm. Record brilliance at wavelengths 14xx nm and longer will also be demonstrated, with over 15 W of optical power with a beam quality of 7.5 mm-mrad. These results of high brightness, high efficiency, and wavelength stabilization demonstrate the pump technology required for next generation solid state and fiber lasers.

On-chip, photon-number-resolving, telecommunication-band detectors for scalable photonic information processing

Energy Technology Data Exchange (ETDEWEB)

Gerrits, Thomas; Lita, Adriana E.; Calkins, Brice; Tomlin, Nathan A.; Fox, Anna E.; Linares, Antia Lamas; Mirin, Richard P.; Nam, Sae Woo [National Institute of Standards and Technology, Boulder, Colorado, 80305 (United States); Thomas-Peter, Nicholas; Metcalf, Benjamin J.; Spring, Justin B.; Langford, Nathan K.; Walmsley, Ian A. [Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Gates, James C.; Smith, Peter G. R. [Optoelectronics Research Centre, University of Southampton, Highfield SO17 1BJ (United Kingdom)

2011-12-15

Integration is currently the only feasible route toward scalable photonic quantum processing devices that are sufficiently complex to be genuinely useful in computing, metrology, and simulation. Embedded on-chip detection will be critical to such devices. We demonstrate an integrated photon-number-resolving detector, operating in the telecom band at 1550 nm, employing an evanescently coupled design that allows it to be placed at arbitrary locations within a planar circuit. Up to five photons are resolved in the guided optical mode via absorption from the evanescent field into a tungsten transition-edge sensor. The detection efficiency is 7.2{+-}0.5 %. The polarization sensitivity of the detector is also demonstrated. Detailed modeling of device designs shows a clear and feasible route to reaching high detection efficiencies.

Single-photon switch: Controllable scattering of photons inside a one-dimensional resonator waveguide

Science.gov (United States)

Zhou, L.; Gong, Z. R.; Liu, Y. X.; Sun, C. P.; Nori, F.

2010-03-01

We analyze the coherent transport of a single photon, which propagates in a one-dimensional coupled-resonator waveguide and is scattered by a controllable two-level system located inside one of the resonators of this waveguide. Our approach, which uses discrete coordinates, unifies low and high energy effective theories for single-photon scattering. We show that the controllable two-level system can behave as a quantum switch for the coherent transport of a single photon. This study may inspire new electro-optical single-photon quantum devices. We also suggest an experimental setup based on superconducting transmission line resonators and qubits. References: L. Zhou, Z.R. Gong, Y.X. Liu, C.P. Sun, F. Nori, Controllable scattering of photons inside a one-dimensional resonator waveguide, Phys. Rev. Lett. 101, 100501 (2008). L. Zhou, H. Dong, Y.X. Liu, C.P. Sun, F. Nori, Quantum super-cavity with atomic mirrors, Phys. Rev. A 78, 063827 (2008).

High-speed single-photon signaling for daytime QKD

Science.gov (United States)

Bienfang, Joshua; Restelli, Alessandro; Clark, Charles

2011-03-01

The distribution of quantum-generated cryptographic key at high throughputs can be critically limited by the performance of the systems' single-photon detectors. While noise and afterpulsing are considerations for all single-photon QKD systems, high-transmission rate systems also have critical detector timing-resolution and recovery time requirements. We present experimental results exploiting the high timing resolution and count-rate stability of modified single-photon avalanche diodes (SPADs) in our GHz QKD system operating over a 1.5 km free-space link that demonstrate the ability to apply extremely short temporal gates, enabling daytime free-space QKD with a 4% QBER. We also discuss recent advances in gating techniques for InGaAs SPADs that are suitable for high-speed fiber-based QKD. We present afterpulse-probability measurements that demonstrate the ability to support single-photon count rates above 100 MHz with low afterpulse probability. These results will benefit the design and characterization of free-space and fiber QKD systems. A. Restelli, J.C. Bienfang A. Mink, and C.W. Clark, IEEE J. Sel. Topics in Quant. Electron 16, 1084 (2010).

Fast pulse discriminator for photon counting at high photon densities

International Nuclear Information System (INIS)

Benoit, R.; Pedrini, A.

1977-03-01

A fast tunnel diode discriminator for photon counting up to 200MHz count frequency is described. The tunnel diode is operated on its apparent I.V. characteristics displayed when the diode is driven into its oscillating region. The pulse shaper-discriminator is completely D.C. coupled in order to avoid base-line shift at high pulse rates

NASA Electronic Parts and Packaging (NEPP): Space Qualification Guidelines of Optoelectronic and Photonic Devices for Optical Communication Systems

Science.gov (United States)

Kim, Quiesup

2001-01-01

Key elements of space qualification of opto-electric and photonic optical devices were overviewed. Efforts were concentrated on the reliability concerns of the devices needed for potential applications in space environments. The ultimate goal for this effort is to gradually establish enough data to develop a space qualification plan of newly developed specific photonic parts using empirical and numerical models to assess the life-time and degradation of the devices for potential long term space missions.

A high-throughput, multi-channel photon-counting detector with picosecond timing

CERN Document Server

Lapington, J S; Miller, G M; Ashton, T J R; Jarron, P; Despeisse, M; Powolny, F; Howorth, J; Milnes, J

2009-01-01

High-throughput photon counting with high time resolution is a niche application area where vacuum tubes can still outperform solid-state devices. Applications in the life sciences utilizing time-resolved spectroscopies, particularly in the growing field of proteomics, will benefit greatly from performance enhancements in event timing and detector throughput. The HiContent project is a collaboration between the University of Leicester Space Research Centre, the Microelectronics Group at CERN, Photek Ltd., and end-users at the Gray Cancer Institute and the University of Manchester. The goal is to develop a detector system specifically designed for optical proteomics, capable of high content (multi-parametric) analysis at high throughput. The HiContent detector system is being developed to exploit this niche market. It combines multi-channel, high time resolution photon counting in a single miniaturized detector system with integrated electronics. The combination of enabling technologies; small pore microchanne...

Surgical treatment of lumbar spinal stenosis with microdecompression and interspinous distraction device insertion. A case series

Directory of Open Access Journals (Sweden)

Ploumis Avraam

2012-10-01

Full Text Available Abstract Background Interspinous distraction devices (IPDD are indicated as stand-alone devices for the treatment of spinal stenosis. The purpose of this study is to evaluate the results of patients undergoing surgery for spinal stenosis with a combination of unilateral microdecompression and interspinous distraction device insertion. Methods This is a prospective clinical and radiological study of minimum 2 years follow-up. Twenty-two patients (average age 64.5 years with low-back pain and unilateral sciatica underwent decompressive surgery for lumbar spinal stenosis. Visual Analogue Scale, Oswestry Disability Index and walking capacity plus radiologic measurements of posterior disc height of the involved level and lumbar lordosis Cobb angle were documented both preoperatively and postoperatively. One-sided posterior subarticular and foraminal decompression was conducted followed by dynamic stabilization of the diseased level with an IPDD (X-STOP. Results The average follow-up time was 27.4 months. Visual Analogue Scale and Oswestry Disability Index improved statistically significantly (p Conclusions The described surgical technique using unilateral microdecompression and IPDD insertion is a clinically effective and radiologically viable treatment method for symptoms of spinal stenosis resistant to non-operative treatment.

Photonic network-on-chip design

CERN Document Server

Bergman, Keren; Biberman, Aleksandr; Chan, Johnnie; Hendry, Gilbert

2013-01-01

This book provides a comprehensive synthesis of the theory and practice of photonic devices for networks-on-chip. It outlines the issues in designing photonic network-on-chip architectures for future many-core high performance chip multiprocessors. The discussion is built from the bottom up: starting with the design and implementation of key photonic devices and building blocks, reviewing networking and network-on-chip theory and existing research, and finishing with describing various architectures, their characteristics, and the impact they will have on a computing system. After acquainting

µ-XRF Studies on the Colour Brilliance in Ancient Wool Carpets

Directory of Open Access Journals (Sweden)

Markus Meyer

2017-01-01

Full Text Available Many handmade ancient and recent oriental wool carpets show outstanding brilliance and persistence of colour that is not achieved by common industrial dyeing procedures. Anthropologists have suggested the influence of wool fermentation prior to dyeing as key technique to achieve the high dyeing quality. By means of μ-XRF elemental mapping of mordant metals we corroborate this view and show a deep and homogenous penetration of colourants into fermented wool fibres. Furthermore we are able to apply this technique and prove that the fermentation process for ancient specimens cannot be investigated by standard methods due to the lack of intact cuticle layers. This finding suggests a broad range of further investigations that will contribute to a deeper understanding of the development of traditional dyeing techniques. Spectroscopic studies add information on the oxidation states of the metal ions within the respective mordant-dye-complexes and suggest a partial charge transfer as basis for a significant colour change when Fe mordants are used.

A dark hollow beam from a selectively liquid-filled photonic crystal fibre

International Nuclear Information System (INIS)

Mei-Yan, Zhang; Shu-Guang, Li; Yan-Yan, Yao; Bo, Fu; Lei, Zhang

2010-01-01

This paper reports that, based on the electromagnetic scattering theory of the multipole method, a high-quality hollow beam is produced through a selectively liquid-filled photonic crystal fibre. Instead of a doughnut shape, a typical hollow beam is produced by other methods; the mode-field images of the hollow-beam photonic crystal fibre satisfy sixth-order rotation symmetry, according to the symmetry of the photonic crystal fibre (PCF) structure. A dark spot size of the liquid-filled photonic crystal fibre-generated hollow beam can be tuned by inserting liquid into the cladding region and varying the photonic crystal fibre structure parameters. The liquid-filled PCF makes a convenient and flexible tool for the guiding and trapping of atoms and the creation of all-fibre optical tweezers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Grating-based X-ray phase-contrast tomography of atherosclerotic plaque at high photon energies

Energy Technology Data Exchange (ETDEWEB)

Hetterich, Holger; Fill, Sandra [Klinikum der Ludwig-Maximilians-Univ., Muenchen (Germany). Inst. fuer Klinische Radiologie; Herzen, Julia [Technische Univ. Muenchen, Garching (Germany). Physik-Dept. und Inst. fuer Medizintechnik; Helmholtz-Zentrum Geesthacht, Geesthacht (Germany). Zentrum fuer Materialforschung] [and others

2013-10-01

Background: Tissue characterization of atherosclerosis by absorption-based imaging methods is limited due to low soft-tissue contrast. Grating-based phase-contrast computed tomography (PC-CT) may become an alternative for plaque assessment if the phase signal can be retrieved at clinically applicable photon energies. The aims of this feasibility study were (i) to characterize arterial vessels at low and high photon energies, (ii) to extract qualitative features and (iii) quantitative phase-contrast Hounsfield units (HU-phase) of plaque components at 53 keV using histopathology as gold standard. Materials and methods: Five human carotid artery specimens underwent grating-based PC-CT using synchrotron radiation of either 23 keV or 53 keV and histological work-up. Specimens without advanced atherosclerosis were used to extract signal criteria of vessel layers. Diseased specimens were screened for important plaque components including fibrous tissue (FT), lipid (LIP), necrotic core (NEC), intraplaque hemorrhage (IPH), inflammatory cell infiltration (INF) and calcifications (CA). Qualitative features as well as quantitative HU-phase were analyzed. Results: Thirty-three regions in 6 corresponding PC-CT scans and histology sections were identified. Healthy samples had the same signal characteristics at 23 keV and 53 keV with bright tunica intima and adventitia and dark media. Plaque components showed differences in signal intensity and texture at 53 keV. Quantitative analysis demonstrated the highest HU-phase of soft plaque in dense FT. Less organized LIP, NEC and INF were associated with lower HU-phase values. The highest HU-phase were measured in CA. Conclusion: PC-CT of atherosclerosis is feasible at high, clinically relevant photon energies and provides detailed information about plaque structure including features of high risk vulnerable plaques. (orig.)

Construction of Nanowire Heterojunctions: Photonic Function-Oriented Nanoarchitectonics.

Science.gov (United States)

Li, Yong Jun; Yan, Yongli; Zhao, Yong Sheng; Yao, Jiannian

2016-02-10

Nanophotonics has received broad research interest because it may provide an alternative opportunity to overcome the fundamental limitations of electronic circuits. So far, diverse photonic functions, such as light generation, modulation, and detection, have been realized based on various nano-materials. The exact structural features of these material systems, including geometric characteristics, surface morphology, and material composition, play a key role in determining the photonic functions. Therefore, rational designs and constructions of materials on both morphological and componential levels, namely nanoarchitectonics, are indispensable for any photonic device with specific functionalities. Recently, a series of nanowire heterojunctions (NWHJs), which are usually made from two or more kinds of material compositions, were constructed for novel photonic applications based on various interactions between different materials at the junctions, for instance, energy transfer, exciton-plasmon coupling, or photon-plasmon coupling. A summary of these works is necessary to get a more comprehensive understanding of the relationship between photonic functions and architectonics of NWHJs, which will be instructive for designing novel photonic devices towards integrated circuits. Here, photonic function oriented nanoarchitectonics based on recent breakthroughs in nanophotonic devices are discussed, with emphasis on the design mechanisms, fabrication strategies, and excellent performances. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multilayered photonic integration on SOI platform using waveguide-based bridge structure

Science.gov (United States)

Majumder, Saikat; Chakraborty, Rajib

2018-06-01

A waveguide based structure on silicon on insulator platform is proposed for vertical integration in photonic integrated circuits. The structure consists of two multimode interference couplers connected by a single mode (SM) section which can act as a bridge over any other underlying device. Two more SM sections acts as input and output of the first and second multimode couplers respectively. Potential application of this structure is in multilayered photonic links. It is shown that the efficiency of the structure can be improved by making some design modifications. The entire simulation is done using effective-index based matrix method. The feature size chosen are comparable to waveguides fabricated previously so as to fabricate the proposed structure easily.

In-line microfluidic refractometer based on C-shaped fiber assisted photonic crystal fiber Sagnac interferometer.

Science.gov (United States)

Wu, Chuang; Tse, Ming-Leung Vincent; Liu, Zhengyong; Guan, Bai-Ou; Lu, Chao; Tam, Hwa-Yaw

2013-09-01

We propose and demonstrate a highly sensitive in-line photonic crystal fiber (PCF) microfluidic refractometer. Ultrathin C-shaped fibers are spliced in-between the PCF and standard single-mode fibers. The C-shaped fibers provide openings for liquid to flow in and out of the PCF. Based on a Sagnac interferometer, the refractive index (RI) response of the device is investigated theoretically and experimentally. A high sensitivity of 6621 nm/RIU for liquid RI from 1.330 to 1.333 is achieved in the experiment, which agrees well with the theoretical analysis.

Effect of inserted metal at anode tip on formation of pulsed X-ray emitting zone of plasma focus device

Science.gov (United States)

Miremad, Seyed Milad; Shirani Bidabadi, Babak

2018-04-01

The effect of the anode's insert material of a plasma focus device on the properties of X-ray emission zone was studied. Inserts were fabricated out of six different materials including aluminum, copper, zinc, tin, tungsten, and lead to cover a wide range of atomic numbers. For each anode's insert material at different gas pressures and different voltages, the shape of X-ray emission zone was recorded by three pinhole cameras, which were installed on sidewall and roof of the chamber of plasma focus device. The results indicated that by changing the gas pressure and the charge voltage of capacitor, the X-ray source of plasma focus emerges with different forms as a concentrated column or conical shape with sharp or cloudy edges. These structures are in the form of a combination of plasma emission and anode-tip emission with different intensities. These observations indicate that the material of the anode-tip especially affects the structure of X-ray emission zone.

Photonics-based real-time ultra-high-range-resolution radar with broadband signal generation and processing.

Science.gov (United States)

Zhang, Fangzheng; Guo, Qingshui; Pan, Shilong

2017-10-23

Real-time and high-resolution target detection is highly desirable in modern radar applications. Electronic techniques have encountered grave difficulties in the development of such radars, which strictly rely on a large instantaneous bandwidth. In this article, a photonics-based real-time high-range-resolution radar is proposed with optical generation and processing of broadband linear frequency modulation (LFM) signals. A broadband LFM signal is generated in the transmitter by photonic frequency quadrupling, and the received echo is de-chirped to a low frequency signal by photonic frequency mixing. The system can operate at a high frequency and a large bandwidth while enabling real-time processing by low-speed analog-to-digital conversion and digital signal processing. A conceptual radar is established. Real-time processing of an 8-GHz LFM signal is achieved with a sampling rate of 500 MSa/s. Accurate distance measurement is implemented with a maximum error of 4 mm within a range of ~3.5 meters. Detection of two targets is demonstrated with a range-resolution as high as 1.875 cm. We believe the proposed radar architecture is a reliable solution to overcome the limitations of current radar on operation bandwidth and processing speed, and it is hopefully to be used in future radars for real-time and high-resolution target detection and imaging.

Lasing cavities and ultra-fast switch based on self-collimation of photonic crystal

International Nuclear Information System (INIS)

Zhao Deyin; Zhou Chuanhong; Gong Qian; Jiang Xunya

2008-01-01

The lasing cavities and ultra-fast switch based on the self-collimation (SC) of photonic crystal have been studied in this work. Some special properties of these devices are demonstrated, such as the higher quality factors and concise integration of the lasing cavities, the tolerance of the non-parallel reflectors in Fabry-Perot cavities. With nonlinearity, the ultra-fast switch can also be realized around the SC frequency. All these functional devices are designed based on the strong beam confinement of SC

Lasing cavities and ultra-fast switch based on self-collimation of photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Zhao Deyin; Zhou Chuanhong; Gong Qian; Jiang Xunya [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)], E-mail: xyjiang@mit.edu

2008-06-07

The lasing cavities and ultra-fast switch based on the self-collimation (SC) of photonic crystal have been studied in this work. Some special properties of these devices are demonstrated, such as the higher quality factors and concise integration of the lasing cavities, the tolerance of the non-parallel reflectors in Fabry-Perot cavities. With nonlinearity, the ultra-fast switch can also be realized around the SC frequency. All these functional devices are designed based on the strong beam confinement of SC.

Magnet sorting algorithms for insertion devices for the Advanced Light Source

International Nuclear Information System (INIS)

Humphries, D.; Hoyer, E.; Kincaid, B.; Marks, S.; Schlueter, R.

1994-01-01

Insertion devices for the Advanced Light Source (ALS) incorporate up to 3,000 magnet blocks each for pole energization. In order to minimize field errors, these magnets must be measured, sorted and assigned appropriate locations and orientation in the magnetic structures. Sorting must address multiple objectives, including pole excitation and minimization of integrated multipole fields from minor field components in the magnets. This is equivalent to a combinatorial minimization problem with a large configuration space. Multi-stage sorting algorithms use ordering and pairing schemes in conjunction with other combinatorial methods to solve the minimization problem. This paper discusses objective functions, solution algorithms and results of application to magnet block measurement data

Toward a fourth-generation light source

International Nuclear Information System (INIS)

Moncton, D. E.

1999-01-01

Historically, x-ray research has been propelled by the existence of urgent and compelling scientific questions and the push of powerful and exquisite source technology. These two factors have gone hand in hand since Rontgen discovered x-rays. Here we review the progress being made with existing third-generation synchrotron-radiation light sources and the prospects for a fourth-generation light source with dramatically improved laser-like beam characteristics. The central technology for high-brilliance x-ray beams is the x-ray undulator, a series of alternating-pole magnets situated above and below the particle beam. When the particle beam is oscillated by the alternating magnetic fields, a set of. interacting and interfering wave fronts is produced, which leads to an x-ray beam with extraordinary properties. Third-generation sources of light in the hard x-ray range have been constructed at three principal facilities: the European Synchrotrons Radiation Facility (ESRF) in France; the Super Photon Ring 8-GeV (or Spring-8) in Japan; and the Advanced Photon Source (APS) in the US. Undulator technology is also used on a number of low-energy machines for radiation in the ultraviolet and soft x-ray regimes. At the APS, these devices exceed all of our original expectations for beam brilliance, tunability, spectral range, and operational flexibility. Shown in Fig. 1 are the tuning curves of the first few harmonics, showing x-ray production from a few kV to better than 40 keV. High-brilliance radiation extends to over 100 keV

A device for combined neutron-photon processes in condensed matter

International Nuclear Information System (INIS)

Stoeckli, A.; Isacson, A.; Koch, M.; Furrer, A.

1985-01-01

A device has been developed for performing neutron scattering experiments with simultaneous irradiation by light at low temperatures. The light source is a halogen lamp which yields broad bands of wavelengths between 400 and 1000 nm by using appropriate filters. The light is guided by a series of lenses to the sample, which is mounted in a cooling system. A mechanical chopper may be inserted into the light beam in order to create light pulses with frequencies between 0.05 Hz and 5 Hz, and the neutron counts resulting from the dark and light experiments are separately stored. Our device has been used to study the light-induced dynamical behaviour of photosynthetic chlorophyll systems by neutron spectroscopy. (author)

Enhancement of broadband optical absorption in photovoltaic devices by band-edge effect of photonic crystals.

Science.gov (United States)

Tanaka, Yoshinori; Kawamoto, Yosuke; Fujita, Masayuki; Noda, Susumu

2013-08-26

We numerically investigate broadband optical absorption enhancement in thin, 400-nm thick microcrystalline silicon (µc-Si) photovoltaic devices by photonic crystals (PCs). We realize absorption enhancement by coupling the light from the free space to the large area resonant modes at the photonic band-edge induced by the photonic crystals. We show that multiple photonic band-edge modes can be produced by higher order modes in the vertical direction of the Si photovoltaic layer, which can enhance the absorption on multiple wavelengths. Moreover, we reveal that the photonic superlattice structure can produce more photonic band-edge modes that lead to further optical absorption. The absorption average in wavelengths of 500-1000 nm weighted to the solar spectrum (AM 1.5) increases almost twice: from 33% without photonic crystal to 58% with a 4 × 4 period superlattice photonic crystal; our result outperforms the Lambertian textured structure.

Silicon photonics for multicore fiber communication

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices.......We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

Coupling the photon kinetics of soft photons with high energy photons

Science.gov (United States)

Silva, L. O.; Bingham, R.

2017-10-01

The description of electromagnetic fields based on the generalized photon kinetic theory, which takes advantage of the Wigner-Moyal description for the corresponding classical field theory, is capable of capturing collective plasma dynamics in the relativistic regime driven by broadband incoherent or partially coherent sources. We explore the possibility to extend this description to include the dynamics of hard photons in the plasma, whose interaction is dominated by single scattering processes. Examples of the modification of classical plasma instabilities due to the presence of hard photons is discussed. Work supported by the European Research Council (ERC-AdG-2015 InPairs Grant No. 695088).

Incorporating photon recycling into the analytical drift-diffusion model of high efficiency solar cells

Energy Technology Data Exchange (ETDEWEB)

Lumb, Matthew P. [The George Washington University, 2121 I Street NW, Washington, DC 20037 (United States); Naval Research Laboratory, Washington, DC 20375 (United States); Steiner, Myles A.; Geisz, John F. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Walters, Robert J. [Naval Research Laboratory, Washington, DC 20375 (United States)

2014-11-21

The analytical drift-diffusion formalism is able to accurately simulate a wide range of solar cell architectures and was recently extended to include those with back surface reflectors. However, as solar cells approach the limits of material quality, photon recycling effects become increasingly important in predicting the behavior of these cells. In particular, the minority carrier diffusion length is significantly affected by the photon recycling, with consequences for the solar cell performance. In this paper, we outline an approach to account for photon recycling in the analytical Hovel model and compare analytical model predictions to GaAs-based experimental devices operating close to the fundamental efficiency limit.

The photonic nanowire: A highly efficient single-photon source

DEFF Research Database (Denmark)

Gregersen, Niels

2014-01-01

The photonic nanowire represents an attractive platform for a quantum light emitter. However, careful optical engineering using the modal method, which elegantly allows access to all relevant physical parameters, is crucial to ensure high efficiency.......The photonic nanowire represents an attractive platform for a quantum light emitter. However, careful optical engineering using the modal method, which elegantly allows access to all relevant physical parameters, is crucial to ensure high efficiency....

Photon Factory activity report, 1988

International Nuclear Information System (INIS)

1989-01-01

Since the foundation of Photon Factory a decade age, it has played an important role as a unique synchrotron X-ray radiation source in Japan. Installation of various insertion devices, storage of intense positron beam and reduction of beam emittance were the substantial achievements in the last several years. The exploitation of the TRISTAN Accumulation Ring as a synchrotron radiation source has paved the way for a new potential of development. All these activities have brought about the increase of beamlines and the expansion of scientific fronts. Third International Conference on Synchrotron Radiation Instrumentation held in Tsukuba was one of the most highlighted events for the facility. In coming years, it is intended to open new research fields using the promising single bunch beam and circularly polarized wiggler radiation. The TRISTAN Main Ring also will be applied to synchrotron radiation research. The Photon Factory in a national synchrotron radiation research facility affiliated to the National Laboratory for High Energy Physics, and it consists of a 2.5 GeV electron linac, a 2.5 GeV storage ring as a synchrotron light source, beam lines and experimental stations. The operation, improvement and development in respective departments are reported. (Kako, I.)

Hybrid perovskites: Approaches towards light-emitting devices

KAUST Repository

Alias, Mohd Sharizal

2016-10-06

The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

Hybrid perovskites: Approaches towards light-emitting devices

KAUST Repository

Alias, Mohd Sharizal; Dursun, Ibrahim; Priante, Davide; Saidaminov, Makhsud I.; Ng, Tien Khee; Bakr, Osman; Ooi, Boon S.

2016-01-01

The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

Single-Photon Technologies Based on Quantum-Dots in Photonic Crystals

DEFF Research Database (Denmark)

Lehmann, Tau Bernstorff

-photon purity under quasi-resonantexcitation. Furthermore the waveguide based platform demonstrates indistinguishable single-photonsat timescales up to 13 ns.A setup for active demultiplexing of single-photons to a three-fold single-photon state is proposed.Using a fast electro-optical modulator, single...

Tight control of light trapping in surface addressable photonic crystal membranes: application to spectrally and spatially selective optical devices (Conference Presentation)

Science.gov (United States)

Letartre, Xavier; Blanchard, Cédric; Grillet, Christian; Jamois, Cécile; Leclercq, Jean-Louis; Viktorovitch, Pierre

2016-04-01

Surface addressable Photonic Crystal Membranes (PCM) are 1D or 2D photonic crystals formed in a slab waveguides where Bloch modes located above the light line are exploited. These modes are responsible for resonances in the reflection spectrum whose bandwidth can be adjusted at will. These resonances result from the coupling between a guided mode of the membrane and a free-space mode through the pattern of the photonic crystal. If broadband, these structures represent an ideal mirror to form compact vertical microcavity with 3D confinement of photons and polarization selectivity. Among numerous devices, low threshold VCSELs with remarkable and tunable modal properties have been demonstrated. Narrow band PCMs (or high Q resonators) have also been extensively used for surface addressable optoelectronic devices where an active material is embedded into the membrane, leading to the demonstration of low threshold surface emitting lasers, nonlinear bistables, optical traps... In this presentation, we will describe the main physical rules which govern the lifetime of photons in these resonant modes. More specifically, it will be emphasized that the Q factor of the PCM is determined, to the first order, by the integral overlap between the electromagnetic field distributions of the guided and free space modes and of the dielectric periodic perturbation which is applied to the homogeneous membrane to get the photonic crystal. It turns out that the symmetries of these distributions are of prime importance for the strength of the resonance. It will be shown that, by molding in-plane or vertical symmetries of Bloch modes, spectrally and spatially selective light absorbers or emitters can be designed. First proof of concept devices will be also presented.

Graphene-based hybrid plasmonic modulator

International Nuclear Information System (INIS)

Shin, Jin-Soo; Kim, Jin-Soo; Tae Kim, Jin

2015-01-01

A graphene-based hybrid plasmonic modulator is designed based on an asymmetric double-electrode plasmonic waveguide structure. The photonic device consists of a monolayer graphene, a thin metal strip, and a thin dielectric layer that is inserted between the grapheme and the metal strip. By electrically tuning the graphene’s refractive index, the propagation loss of the hybrid long-range surface plasmon polariton strip mode in the proposed graphene-based hybrid plasmonic waveguide is switchable, and hence the intensity of the guided modes is modulated. The highest modulation depth is observed at the graphene’s epsilon-near-zero region. The device characteristics are characterized over the entire C-band (1.530–1.565 μm). (paper)

Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

Science.gov (United States)

Fu, Enjin

Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

High-brightness tapered laser diodes with photonic crystal structures

Science.gov (United States)

Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun

2018-02-01

Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.

Non-Hermitian photonics based on parity-time symmetry

Science.gov (United States)

Feng, Liang; El-Ganainy, Ramy; Ge, Li

2017-12-01

Nearly one century after the birth of quantum mechanics, parity-time symmetry is revolutionizing and extending quantum theories to include a unique family of non-Hermitian Hamiltonians. While conceptually striking, experimental demonstration of parity-time symmetry remains unexplored in quantum electronic systems. The flexibility of photonics allows for creating and superposing non-Hermitian eigenstates with ease using optical gain and loss, which makes it an ideal platform to explore various non-Hermitian quantum symmetry paradigms for novel device functionalities. Such explorations that employ classical photonic platforms not only deepen our understanding of fundamental quantum physics but also facilitate technological breakthroughs for photonic applications. Research into non-Hermitian photonics therefore advances and benefits both fields simultaneously.

Control of coherent information via on-chip photonic-phononic emitter-receivers.

Science.gov (United States)

Shin, Heedeuk; Cox, Jonathan A; Jarecki, Robert; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T

2015-03-05

Rapid progress in integrated photonics has fostered numerous chip-scale sensing, computing and signal processing technologies. However, many crucial filtering and signal delay operations are difficult to perform with all-optical devices. Unlike photons propagating at luminal speeds, GHz-acoustic phonons moving at slower velocities allow information to be stored, filtered and delayed over comparatively smaller length-scales with remarkable fidelity. Hence, controllable and efficient coupling between coherent photons and phonons enables new signal processing technologies that greatly enhance the performance and potential impact of integrated photonics. Here we demonstrate a mechanism for coherent information processing based on travelling-wave photon-phonon transduction, which achieves a phonon emit-and-receive process between distinct nanophotonic waveguides. Using this device, physics--which supports GHz frequencies--we create wavelength-insensitive radiofrequency photonic filters with frequency selectivity, narrow-linewidth and high power-handling in silicon. More generally, this emit-receive concept is the impetus for enabling new signal processing schemes.

Mesoscopic photon heat transistor

DEFF Research Database (Denmark)

Ojanen, T.; Jauho, Antti-Pekka

2008-01-01

We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-typ......We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir......-Wingreen-Landauer-type of conductance formula, which gives the photonic heat current through an arbitrary circuit element coupled to two dissipative reservoirs at finite temperatures. As an illustration we present an exact solution for the case when the intermediate circuit can be described as an electromagnetic resonator. We discuss...

Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors.

Science.gov (United States)

Li, Dongwei; Hu, Yongsheng; Zhang, Nan; Lv, Ying; Lin, Jie; Guo, Xiaoyang; Fan, Yi; Luo, Jinsong; Liu, Xingyuan

2017-10-18

The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

Photodetection, photon event localization and position tomography device comprising a gammagraphy camera equipped wit such devices

International Nuclear Information System (INIS)

Jatteau, M.R.

1984-01-01

This device of photodetection and photon event (and noticeably scintillations) localization comprises at least a photomultiplier tube with unique photomultiplying structure and in front of this tube, a net of juxtaposed conduction metal wires excited by voltage pulses. This net comprises only 2n metallic wires to assure the localization of 2sup(2n) possible positions, and that is one of its characteristics [fr

Radiation-hard silicon photonics for high energy physics and beyond

CERN Multimedia

CERN. Geneva

2016-01-01

Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

Three-dimensional function photonic crystals

Science.gov (United States)

Zhang, Hai-Feng

2017-11-01

In this paper, the properties of the photonic band gaps (PBGs) of three-dimensional (3D) function photonic crystals (PCs) are theoretically investigated by a modified plane wave expansion (PWE) method, whose equations for computations are deduced. The configuration of 3D function PCs is the dielectric spheres inserted in the air background with simple-cubic (SC) lattices whose dielectric constants are the functions of space coordinates, which can be realized by the electro-optical or optical Kerr effect in the practice. The influences of the parameter for 3D function PCs on the PBGs also are discussed. The calculated results show that the bandwidths and number of PBGs can be tuned with different distributions of function dielectrics. Compared with the conventional 3D dielectric PCs with SC lattices, the larger and more PBGs can be obtained in the 3D function PCs. Those results provide a new way to design the novel practical devices.

Evaluation of a high resolution silicon PET insert module

Energy Technology Data Exchange (ETDEWEB)

Grkovski, Milan, E-mail: milan.grkovski@ijs.si [Jožef Stefan Institute, Ljubljana (Slovenia); Memorial Sloan Kettering Cancer Center, New York, NY (United States); Brzezinski, Karol [IFIC/CSIC, Valencia (Spain); Cindro, Vladimir [Jožef Stefan Institute, Ljubljana (Slovenia); Clinthorne, Neal H. [University of Michigan, Ann Arbor, MI (United States); Kagan, Harris [Ohio State University, Columbus, OH (United States); Lacasta, Carlos [IFIC/CSIC, Valencia (Spain); Mikuž, Marko [Jožef Stefan Institute, Ljubljana (Slovenia); Solaz, Carles [IFIC/CSIC, Valencia (Spain); Studen, Andrej [Jožef Stefan Institute, Ljubljana (Slovenia); Weilhammer, Peter [Ohio State University, Columbus, OH (United States); Žontar, Dejan [Jožef Stefan Institute, Ljubljana (Slovenia)

2015-07-11

Conventional PET systems can be augmented with additional detectors placed in close proximity of the region of interest. We developed a high resolution PET insert module to evaluate the added benefit of such a combination. The insert module consists of two back-to-back 1 mm thick silicon sensors, each segmented into 1040 1 mm{sup 2} pads arranged in a 40 by 26 array. A set of 16 VATAGP7.1 ASICs and a custom assembled data acquisition board were used to read out the signal from the insert module. Data were acquired in slice (2D) geometry with a Jaszczak phantom (rod diameters of 1.2–4.8 mm) filled with {sup 18}F-FDG and the images were reconstructed with ML-EM method. Both data with full and limited angular coverage from the insert module were considered and three types of coincidence events were combined. The ratio of high-resolution data that substantially improves quality of the reconstructed image for the region near the surface of the insert module was estimated to be about 4%. Results from our previous studies suggest that such ratio could be achieved at a moderate technological expense by using an equivalent of two insert modules (an effective sensor thickness of 4 mm)

The Advanced Photon Source list of parameters

International Nuclear Information System (INIS)

Bizek, H.M.

1996-07-01

The Advanced Photon Source (APS) is a third-generation synchrotron radiation source that stores positrons in a storage ring. The choice of positrons as accelerating particles was motivated by the usual reason: to eliminate the degradation of the beam caused by trapping of positively charged dust particles or ions. The third-generation synchrotron radiation sources are designed to have low beam emittance and many straight sections for insertion devices. The parameter list is comprised of three basic systems: the injection system, the storage ring system, and the experimental facilities system. The components of the injection system are listed according to the causal flow of positrons. Below we briefly list the individual components of the injection system, with the names of people responsible for managing these machines in parentheses: the linac system; electron linac-target-positron linac (Marion White); low energy transport line from linac to the PAR (Michael Borland); positron accumulator ring or PAR (Michael Borland); low energy transport line from PAR to injector synchrotron (Michael Borland); injector synchrotron (Stephen Milton); high energy transport line from injector synchrotron to storage ring (Stephen Milton). The storage ring system, managed by Glenn Decker, uses the Chasman-Green lattice. The APS storage ring, 1104 m in circumference, has 40 periodic sectors. Six are used to house hardware and 34 serve as insertion devices. Another 34 beamlines emit radiation from bending magnets. The experimental facilities system's parameters include parameters for both an undulator and a wiggler

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

Science.gov (United States)

Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

2010-01-01

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

High aspect ratio catalytic reactor and catalyst inserts therefor

Science.gov (United States)

Lin, Jiefeng; Kelly, Sean M.

2018-04-10

The present invention relates to high efficient tubular catalytic steam reforming reactor configured from about 0.2 inch to about 2 inch inside diameter high temperature metal alloy tube or pipe and loaded with a plurality of rolled catalyst inserts comprising metallic monoliths. The catalyst insert substrate is formed from a single metal foil without a central supporting structure in the form of a spiral monolith. The single metal foil is treated to have 3-dimensional surface features that provide mechanical support and establish open gas channels between each of the rolled layers. This unique geometry accelerates gas mixing and heat transfer and provides a high catalytic active surface area. The small diameter, high aspect ratio tubular catalytic steam reforming reactors loaded with rolled catalyst inserts can be arranged in a multi-pass non-vertical parallel configuration thermally coupled with a heat source to carry out steam reforming of hydrocarbon-containing feeds. The rolled catalyst inserts are self-supported on the reactor wall and enable efficient heat transfer from the reactor wall to the reactor interior, and lower pressure drop than known particulate catalysts. The heat source can be oxygen transport membrane reactors.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

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