Ultra-low damping in lift-off structured yttrium iron garnet thin films

Science.gov (United States)

Krysztofik, A.; Coy, L. E.; Kuświk, P.; Załeski, K.; Głowiński, H.; Dubowik, J.

2017-11-01

We show that using maskless photolithography and the lift-off technique, patterned yttrium iron garnet thin films possessing ultra-low Gilbert damping can be accomplished. The films of 70 nm thickness were grown on (001)-oriented gadolinium gallium garnet by means of pulsed laser deposition, and they exhibit high crystalline quality, low surface roughness, and the effective magnetization of 127 emu/cm3. The Gilbert damping parameter is as low as 5 ×10-4. The obtained structures have well-defined sharp edges which along with good structural and magnetic film properties pave a path in the fabrication of high-quality magnonic circuits and oxide-based spintronic devices.

Nanocoatings and ultra-thin films technologies and applications

CERN Document Server

Tiginyanu, Ion

2011-01-01

Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

Ultra-thin films for plasmonics: a technology overview

DEFF Research Database (Denmark)

Malureanu, Radu; Lavrinenko, Andrei

2015-01-01

Ultra-thin films with low surface roughness that support surface plasmon-polaritons in the infra-red and visible ranges are needed in order to improve the performance of devices based on the manipulation of plasmon propagation. Increasing amount of efforts is made in order not only to improve...... the quality of the deposited layers but also to diminish their thickness and to find new materials that could be used in this field. In this review, we consider various thin films used in the field of plasmonics and metamaterials in the visible and IR range. We focus our presentation on technological issues...... of their deposition and reported characterization of film plasmonic performance....

Mechanical and electrical properties of ultra-thin chips and flexible electronics assemblies during bending

NARCIS (Netherlands)

Van Den Ende, D.A.; Van De Wiel, H.J.; Kusters, R.H.L.; Sridhar, A.; Schram, J.F.M.; Cauwe, M.; Van Den Brand, J.

2014-01-01

Ultra-thin chips of less than 20 μm become flexible, allowing integration of silicon IC technology with highly flexible electronics such as food packaging sensor systems or healthcare and sport monitoring tags as wearable patches or even directly in clothing textile. The ultra-thin chips in these

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Demes, Thomas [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Ternon, Céline, E-mail: celine.ternon@grenoble-inp.fr [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble (France); Morisot, Fanny [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Riassetto, David [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Legallais, Maxime [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Roussel, Hervé; Langlet, Michel [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France)

2017-07-15

Highlights: • ZnO nanowires are grown on sol-gel ZnO seed layers by hydrothermal synthesis. • Ultra-thin and high aspect ratio nanowires are obtained without using additives. • Nanowire diameter is 20–25 nm regardless of growth time and seed morphology. • A nanowire growth model is developed on the basis of thermodynamic considerations. • The nanowires are intended for integration into electrically conductive nanonets. - Abstract: Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20–25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20–25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

Colored ultra-thin hybrid photovoltaics with high quantum efficiency for decorative PV applications (Presentation Recording)

Science.gov (United States)

Guo, L. Jay

2015-10-01

This talk will describe an approach to create architecturally compatible and decorative thin-film-based hybrid photovoltaics [1]. Most current solar panels are fabricated via complex processes using expensive semiconductor materials, and they are rigid and heavy with a dull, black appearance. As a result of their non-aesthetic appearance and weight, they are primarily installed on rooftops to minimize their negative impact on building appearance. Recently we introduced dual-function solar cells based on ultra-thin dopant-free amorphous silicon embedded in an optical cavity that not only efficiently extract the photogenerated carriers but also display distinctive colors with the desired angle-insensitive appearances [1,2]. The angle-insensitive behavior is the result of an interesting phase cancellation effect in the optical cavity with respect to angle of light propagation [3]. In order to produce the desired optical effect, the semiconductor layer should be ultra-thin and the traditional doped layers need to be eliminated. We adopted the approach of employing charge transport/blocking layers used in organic solar cells to meet this demand. We showed that the ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell can transmit desired wavelength of light and that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges. This is because the a-Si layer thickness is smaller than the charge diffusion length, therefore the electron-hole recombination is strongly suppressed in such ultra-thin layer. Reflective colored PVs can be made in a similar fashion. Light-energy-harvesting colored signage was demonstrated. Furthermore, a cascaded photovoltaics scheme based on tunable spectrum splitting can be employed to increase power efficiency by absorbing a broader band of light energy. Our work provides a guideline for optimizing a photoactive layer thickness in high efficiency hybrid PV design, which can be

Reliability assessment of ultra-thin HfO{sub 2} films deposited on silicon wafer

Energy Technology Data Exchange (ETDEWEB)

Fu, Wei-En [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

2012-09-01

Highlights: Black-Right-Pointing-Pointer Nano-mechanical properties on annealed ultra-thin HfO{sub 2} film are studied. Black-Right-Pointing-Pointer By AFM analysis, hardness of the crystallized HfO{sub 2} film significantly increases. Black-Right-Pointing-Pointer By nano-indention, the film hardness increases with less contact stiffness. Black-Right-Pointing-Pointer Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO{sub 2}) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO{sub 2} films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO{sub 2} films deposited on silicon wafers (HfO{sub 2}/SiO{sub 2}/Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO{sub 2} (nominal thickness Almost-Equal-To 10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO{sub 2} phases for the atomic layer deposited HfO{sub 2}. The HfSi{sub x}O{sub y} complex formed at the interface between HfO{sub 2} and SiO{sub 2}/Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO{sub 2} film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically

Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

KAUST Repository

Yave, Wilfredo

2010-09-01

Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform thickness (<100 nm) is crucial. By using a tailor-made polymer and by controlling the nanofabrication conditions, we developed and manufactured defect-free ultra-thin film membranes with unmatched carbon dioxide permeances, i.e. >5 m3 (STP) m-2 h -1 bar-1. The permeances are extremely high, because the membranes are made from a CO2 philic polymer material and they are only a few tens of nanometers thin. Thus, these thin film membranes have potential application in the treatment of large gas streams under low pressure like, e.g., carbon dioxide separation from flue gas. © 2010 IOP Publishing Ltd.

Preparation of ultra-thin and high-quality WO{sub 3} compact layers and comparision of WO{sub 3} and TiO{sub 2} compact layer thickness in planar perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jincheng; Shi, Chengwu, E-mail: shicw506@foxmail.com; Chen, Junjun; Wang, Yanqing; Li, Mingqian

2016-06-15

In this paper, the ultra-thin and high-quality WO{sub 3} compact layers were successfully prepared by spin-coating-pyrolysis method using the tungsten isopropoxide solution in isopropanol. The influence of WO{sub 3} and TiO{sub 2} compact layer thickness on the photovoltaic performance of planar perovskite solar cells was systematically compared, and the interface charge transfer and recombination in planar perovskite solar cells with TiO{sub 2} compact layer was analyzed by electrochemical impedance spectroscopy. The results revealed that the optimum thickness of WO{sub 3} and TiO{sub 2} compact layer was 15 nm and 60 nm. The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. - Graphical abstract: The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. Display Omitted - Highlights: • Preparation of ultra-thin and high-quality WO{sub 3} compact layers. • Perovskite solar cell with 15 nm-thick WO{sub 3} compact layer achieved PCE of 10.14%. • Perovskite solar cell with 60 nm-thick TiO{sub 2} compact layer achieved PCE of 12.64%.

Non-ohmic transport behavior in ultra-thin gold films

International Nuclear Information System (INIS)

Alkhatib, A.; Souier, T.; Chiesa, M.

2011-01-01

Highlights: → C-AFM study on ultra-thin gold films. → Connection between ultra-thin film morphology and lateral electrical transport. → Transition between ohmic and non-ohmic behavior. → Electrical transition correlation to the film structure continuity. → Direct and indirect tunneling regimes related to discontinuous structures. - Abstract: Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive regions (10 10 -10 11 Ω), the density of which increases strongly at lower thickness. The high resistivity is shown to be directly related to discontinuities in the metal sheet. Local I-V curves are acquired to show the nature of electrical behavior relative to thickness. Results show that in Au films of higher thickness the electrical behavior is ohmic, while it is non-ohmic in highly discontinuous films of lower thickness, with the transition happening between 34 and 39 nm. The non-ohmic behavior is explained with tunneling occurring between separated Au islands. The results explain the abrupt increase of electrical resistivity at lower thin film thicknesses.

Research on precision grinding technology of large scale and ultra thin optics

Science.gov (United States)

Zhou, Lian; Wei, Qiancai; Li, Jie; Chen, Xianhua; Zhang, Qinghua

2018-03-01

The flatness and parallelism error of large scale and ultra thin optics have an important influence on the subsequent polishing efficiency and accuracy. In order to realize the high precision grinding of those ductile elements, the low deformation vacuum chuck was designed first, which was used for clamping the optics with high supporting rigidity in the full aperture. Then the optics was planar grinded under vacuum adsorption. After machining, the vacuum system was turned off. The form error of optics was on-machine measured using displacement sensor after elastic restitution. The flatness would be convergenced with high accuracy by compensation machining, whose trajectories were integrated with the measurement result. For purpose of getting high parallelism, the optics was turned over and compensation grinded using the form error of vacuum chuck. Finally, the grinding experiment of large scale and ultra thin fused silica optics with aperture of 430mm×430mm×10mm was performed. The best P-V flatness of optics was below 3 μm, and parallelism was below 3 ″. This machining technique has applied in batch grinding of large scale and ultra thin optics.

Study of neural cells on organic semiconductor ultra thin films

Energy Technology Data Exchange (ETDEWEB)

Bystrenova, Eva; Tonazzini, Ilaria; Stoliar, Pablo; Greco, Pierpaolo; Lazar, Adina; Dutta, Soumya; Dionigi, Chiara; Cacace, Marcello; Biscarini, Fabio [ISMN-CNR, Bologna (Italy); Jelitai, Marta; Madarasz, Emilia [IEM- HAS, Budapest (Hungary); Huth, Martin; Nickel, Bert [LMU, Munich (Germany); Martini, Claudia [Dept. PNPB, Univ. of Pisa (Italy)

2008-07-01

Many technological advances are currently being developed for nano-fabrication, offering the ability to create and control patterns of soft materials. We report the deposition of cells on organic semiconductor ultra-thin films. This is a first step towards the development of active bio/non bio systems for electrical transduction. Thin films of pentacene, whose thickness was systematically varied, were grown by high vacuum sublimation. We report adhesion, growth, and differentiation of human astroglial cells and mouse neural stem cells on an organic semiconductor. Viability of astroglial cells in time was measured as a function of the roughness and the characteristic morphology of ultra thin organic film, as well as the features of the patterned molecules. Optical fluorescence microscope coupled to atomic force microscope was used to monitor the presence, density and shape of deposited cells. Neural stem cells remain viable, differentiate by retinoic acid and form dense neuronal networks. We have shown the possibility to integrate living neural cells on organic semiconductor thin films.

Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

Science.gov (United States)

Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

2017-10-06

Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

Magnetic anisotropy in iron thin films evaporated under ultra-high vacuum

International Nuclear Information System (INIS)

Dinhut, J.F.; Eymery, J.P.; Krishnan, R.

1992-01-01

α-iron thin films with thickness ranging between 20 and 1500 nm have been evaporated using an electron gun under ultra-high vacuum conditions (5.10 -7 P). The columnar structure observed in cross-sectional TEM is related to the large surface diffusion. From Moessbauer spectra the spin orientation is deduced and found to be influenced by the column axis. Spins can be obtained perpendicularly to the film plane by rotating the substrte during the deposition. The magnetization of the samples is reduced by about 30% and the reduction attributed to the interstitial space which increases with the incident angle. The substrate rotation also decreases Ku( parallel ) by a factor 2 and increases Ku( perpendicular to ). (orig.)

Ultra-thin ZnSe: Anisotropic and flexible crystal structure

Energy Technology Data Exchange (ETDEWEB)

Bacaksiz, C., E-mail: cihanbacaksiz@iyte.edu.tr [Department of Physics, Izmir Institute of Technology, 35430 Izmir (Turkey); Senger, R.T. [Department of Physics, Izmir Institute of Technology, 35430 Izmir (Turkey); Sahin, H. [Department of Photonics, Izmir Institute of Technology, 35430 Izmir (Turkey)

2017-07-01

Highlights: • Ultra-thin ZnSe is dynamically stable. • Ultra-thin ZnSe is electronically direct-gap semiconductor. • Ultra-thin ZnSe is ultra-flexible. • Ultra-thin ZnSe is mechanically in-plane anisotropic. - Abstract: By performing density functional theory-based calculations, we investigate the structural, electronic, and mechanical properties of the thinnest ever ZnSe crystal . The vibrational spectrum analysis reveals that the monolayer ZnSe is dynamically stable and has flexible nature with its soft phonon modes. In addition, a direct electronic band gap is found at the gamma point for the monolayer structure of ZnSe. We also elucidate that the monolayer ZnSe has angle dependent in-plane elastic parameters. In particular, the in-plane stiffness values are found to be 2.07 and 6.89 N/m for the arm-chair and zig-zag directions, respectively. The angle dependency is also valid for the Poisson ratio of the monolayer ZnSe. More significantly, the in-plane stiffness of the monolayer ZnSe is the one-tenth of Young modulus of bulk zb-ZnSe which indicates that the monolayer ZnSe is a quite flexible single layer crystal. With its flexible nature and in-plane anisotropic mechanical properties, the monolayer ZnSe is a good candidate for nanoscale mechanical applications.

Ultra-thin ZnSe: Anisotropic and flexible crystal structure

International Nuclear Information System (INIS)

Bacaksiz, C.; Senger, R.T.; Sahin, H.

2017-01-01

Highlights: • Ultra-thin ZnSe is dynamically stable. • Ultra-thin ZnSe is electronically direct-gap semiconductor. • Ultra-thin ZnSe is ultra-flexible. • Ultra-thin ZnSe is mechanically in-plane anisotropic. - Abstract: By performing density functional theory-based calculations, we investigate the structural, electronic, and mechanical properties of the thinnest ever ZnSe crystal . The vibrational spectrum analysis reveals that the monolayer ZnSe is dynamically stable and has flexible nature with its soft phonon modes. In addition, a direct electronic band gap is found at the gamma point for the monolayer structure of ZnSe. We also elucidate that the monolayer ZnSe has angle dependent in-plane elastic parameters. In particular, the in-plane stiffness values are found to be 2.07 and 6.89 N/m for the arm-chair and zig-zag directions, respectively. The angle dependency is also valid for the Poisson ratio of the monolayer ZnSe. More significantly, the in-plane stiffness of the monolayer ZnSe is the one-tenth of Young modulus of bulk zb-ZnSe which indicates that the monolayer ZnSe is a quite flexible single layer crystal. With its flexible nature and in-plane anisotropic mechanical properties, the monolayer ZnSe is a good candidate for nanoscale mechanical applications.

Spectroelectrochemical properties of ultra-thin indium tin oxide films under electric potential modulation

Energy Technology Data Exchange (ETDEWEB)

Han, Xue, E-mail: x0han004@louisville.edu; Mendes, Sergio B., E-mail: sbmend01@louisville.edu

2016-03-31

In this work, the spectroscopic properties of ultra-thin ITO films are characterized under an applied electric potential modulation. To detect minute spectroscopic features, the ultra-thin ITO film was coated over an extremely sensitive single-mode integrated optical waveguide, which provided a long pathlength with more than adequate sensitivity for optical interrogation of the ultra-thin film. Experimental configurations with broadband light and several laser lines at different modulation schemes of an applied electric potential were utilized to elucidate the nature of intrinsic changes. The imaginary component of the refractive index (absorption coefficient) of the ultra-thin ITO film is unequivocally shown to have a dependence on the applied potential and the profile of this dependence changes substantially even for wavelengths inside a small spectral window (500–600 nm). The characterization technique and the data reported here can be crucial to several applications of the ITO material as a transparent conductive electrode, as for example in spectroelectrochemical investigations of surface-confined redox species. - Highlights: • Optical waveguides are applied for spectroscopic investigations of ultra-thin films. • Ultra-thin ITO films in aqueous environment are studied under potential modulation. • Unique spectroscopic features of ultra-thin ITO films are unambiguously observed.

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

Science.gov (United States)

Demes, Thomas; Ternon, Céline; Morisot, Fanny; Riassetto, David; Legallais, Maxime; Roussel, Hervé; Langlet, Michel

2017-07-01

Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20-25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20-25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperatures

OpenAIRE

Thiery, Nicolas; Naletov, Vladimir V.; Vila, Laurent; Marty, Alain; Brenac, Ariel; Jacquot, Jean-François; de Loubens, Grégoire; Viret, Michel; Anane, Abdelmadjid; Cros, Vincent; Youssef, Jamal Ben; Demidov, Vladislav E.; Demokritov, Sergej O.; Klein, Olivier

2017-01-01

We report a study on the electrical properties of 19 nm thick Yttrium Iron Garnet (YIG) films grown by liquid phase epitaxy. The electrical conductivity and Hall coefficient are measured in the high temperature range [300,400]~K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band-gap of $E_g\\approx 2$ eV, indicating that epitaxial YIG ultra-thin film...

Comparison between bulk and thin foil ion irradiation of ultra high purity Fe

Energy Technology Data Exchange (ETDEWEB)

Prokhodtseva, A., E-mail: anna.prokhodtseva@psi.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse, 5232 Villigen PSI (Switzerland); Décamps, B. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), CNRS-IN2P3-Univ. Paris-Sud 11, UMR 8609, Bât. 108, 91405 Orsay (France); Schäublin, R. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse, 5232 Villigen PSI (Switzerland)

2013-11-15

Accumulation of radiation damage in ultra high purity iron under self ion irradiation without and with simultaneous He implantation was investigated in bulk and thin foil form to assess, on the one hand, the effect of free surfaces and, on the other hand, the influence of He. Specimens were irradiated at room temperature to a dose of 0.8 dpa and ∼900 appm He content. We found in thin foils after irradiation with single beam a majority of a{sub 0} 〈1 0 0〉 type loops, while in the presence of He it is the ½ a{sub 0} 〈1 1 1〉 type loops that prevail. In single beam irradiated bulk samples most of the loops are of ½ a{sub 0} 〈1 1 1〉 type. In both bulk and thin foils density of defects visible in transmission electron microscope is considerably higher when He is implanted with prevailing ½ a{sub 0} 〈1 1 1〉 dislocation loops, indicating that He stabilizes them.

High-quality EuO thin films the easy way via topotactic transformation

Science.gov (United States)

Mairoser, Thomas; Mundy, Julia A.; Melville, Alexander; Hodash, Daniel; Cueva, Paul; Held, Rainer; Glavic, Artur; Schubert, Jürgen; Muller, David A.; Schlom, Darrell G.; Schmehl, Andreas

2015-07-01

Epitaxy is widely employed to create highly oriented crystalline films. A less appreciated, but nonetheless powerful means of creating such films is via topotactic transformation, in which a chemical reaction transforms a single crystal of one phase into a single crystal of a different phase, which inherits its orientation from the original crystal. Topotactic reactions may be applied to epitactic films to substitute, add or remove ions to yield epitactic films of different phases. Here we exploit a topotactic reduction reaction to provide a non-ultra-high vacuum (UHV) means of growing highly oriented single crystalline thin films of the easily over-oxidized half-metallic semiconductor europium monoxide (EuO) with a perfection rivalling that of the best films of the same material grown by molecular-beam epitaxy or UHV pulsed-laser deposition. As the technique only requires high-vacuum deposition equipment, it has the potential to drastically improve the accessibility of high-quality single crystalline films of EuO as well as other difficult-to-synthesize compounds.

Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

International Nuclear Information System (INIS)

Stoldt, Conrad R; Bright, Victor M

2006-01-01

A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film. (topical review)

Finite Element Modelling of Bends and Creases during Folding Ultra Thin Stainless Steel Foils

NARCIS (Netherlands)

Datta, K.; Akagi, H.; Geijselaers, Hubertus J.M.; Huetink, Han

2003-01-01

Finite Element Modelling of an ultra thin foil of SUS 304 stainless steel is carried out. These foils are 20 mm and below in thickness. The development of stresses and strains during folding of these foils is studied. The objective of this study is to induce qualities of paper in the foils of

Ultra thin metallic coatings to control near field radiative heat transfer

Science.gov (United States)

Esquivel-Sirvent, R.

2016-09-01

We present a theoretical calculation of the changes in the near field radiative heat transfer between two surfaces due to the presence of ultra thin metallic coatings on semiconductors. Depending on the substrates, the radiative heat transfer is modulated by the thickness of the ultra thin film. In particular we consider gold thin films with thicknesses varying from 4 to 20 nm. The ultra-thin film has an insulator-conductor transition close to a critical thickness of dc = 6.4 nm and there is an increase in the near field spectral heat transfer just before the percolation transition. Depending on the substrates (Si or SiC) and the thickness of the metallic coatings we show how the near field heat transfer can be increased or decreased as a function of the metallic coating thickness. The calculations are based on available experimental data for the optical properties of ultrathin coatings.

Industry-relevant magnetron sputtering and cathodic arc ultra-high vacuum deposition system for in situ x-ray diffraction studies of thin film growth using high energy synchrotron radiation

OpenAIRE

Schroeder, Jeremy; Thomson, W.; Howard, B.; Schell, N.; Näslund, Lars-Åke; Rogström, Lina; Johansson-Jöesaar, Mats P.; Ghafoor, Naureen; Odén, Magnus; Nothnagel, E.; Shepard, A.; Greer, J.; Birch, Jens

2015-01-01

We present an industry-relevant, large-scale, ultra-high vacuum (UHV) magnetron sputtering and cathodic arc deposition system purposefully designed for time-resolved in situ thin film deposition/annealing studies using high-energy (greater than50 keV), high photon flux (greater than10(12) ph/s) synchrotron radiation. The high photon flux, combined with a fast-acquisition-time (less than1 s) two-dimensional (2D) detector, permits time-resolved in situ structural analysis of thin film formation...

Epitaxial stabilization of ultra thin films of electron doped manganites

Energy Technology Data Exchange (ETDEWEB)

Middey, S., E-mail: smiddey@uark.edu; Kareev, M.; Meyers, D.; Liu, X.; Cao, Y.; Tripathi, S.; Chakhalian, J. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Yazici, D.; Maple, M. B. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Ryan, P. J.; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2014-05-19

Ultra-thin films of the electron doped manganite La{sub 0.8}Ce{sub 0.2}MnO{sub 3} were grown in a layer-by-layer growth mode on SrTiO{sub 3} (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology were confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce{sup 4+} and Mn{sup 2+} ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show a ferromagnetic ground state as revealed by both dc magnetization and x-ray magnetic circular dichroism measurements and remain insulating contrary to earlier reports of a metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive manganite phase diagram akin to the high-T{sub c} cuprates.

Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices

Energy Technology Data Exchange (ETDEWEB)

Hsun Su, Yen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, Chia-Yun; Chang, Chung-Chien [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Tu, Sheng-Lung; Shen, Yun-Hwei [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-08-05

Ultra-thin titanium films were deposited via ultra-high vacuum ion beam sputter deposition. Since the asymmetric electric field of the metal foil plane matches the B-band absorption of chlorophyll a, the ultra-thin titanium nanolayers were able to generate surface plasmon resonance, thus enhancing the photoluminescence of chlorophyll a. Because the density of the states of plasmon resonance increases, the enhancement of photoluminescence also rises. Due to the biocompatibility and inexpensiveness of titanium, it can be utilized to enhance the bioluminescence of chloroplast in biological light emitting devices, bio-laser, and biophotonics.

Improvement of transistor characteristics and stability for solution-processed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Jeng, Jiann-Shing, E-mail: jsjeng@mail.nutn.edu.tw

2016-08-15

Nb-doped Zinc tin oxide (NZTO) channel materials have been prepared by solution process in combination with the spin-coating method. All NZTO thin film transistors (TFTs) are n-type enhancement-mode devices, either without or with Nb additives. High-valence niobium ion (ionic charge = +5) has a larger ionic potential and similar ionic radius to Zn{sup 2+} and Sn{sup 4+} ions. As compared with the pure ZTO device, introducing Nb{sup 5+} ions into the ZTO channel layers can improve the electrical properties and bias stability of TFTs because of the reduction of the oxygen vacancies. This study discusses the connection among the material properties of the NZTO films and the electrical performance and bias stability of NZTO TFTs and how they are influenced by the Nb/(Nb + Sn) molar ratios of NZTO films. - Highlights: • Ultra-thin high-valence niobium doped zinc-tin oxide (NZTO) thin films are prepared using a solution process. • Nb dopants in ZTO films reduce the oxygen vacancy and subgap adsorption of the ZTO films. • The Nb-doping concentration of the NZTO channel layer has a strong influence on the TFT performance.

Highly reflective rear surface passivation design for ultra-thin Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Vermang, Bart, E-mail: Bart.Vermang@angstrom.uu.se [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); ESAT-KU Leuven, University of Leuven, Leuven 3001 (Belgium); Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); Gunnarsson, Rickard; Pilch, Iris; Helmersson, Ulf [Plasma & Coatings Physics, University of Linköping, Linköping 58183 (Sweden); Kotipalli, Ratan; Henry, Frederic; Flandre, Denis [ICTEAM/IMNC, Université Catholique de Louvain, Louvain-la-Neuve 1348 (Belgium)

2015-05-01

Al{sub 2}O{sub 3} rear surface passivated ultra-thin Cu(In,Ga)Se{sub 2} (CIGS) solar cells with Mo nano-particles (NPs) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NPs are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al{sub 2}O{sub 3} layer passivates the CIGS rear surface between the Mo NPs, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm{sup 2}; as compared to equivalent CIGS solar cells with a standard back contact. - Highlights: • Proof-of-principle ultra-thin CIGS solar cells have been fabricated. • The cells have Mo nano-particles (NPs) as local rear contacts. • An Al{sub 2}O{sub 3} film passivates the CIGS rear surface between these nano-particles. • [Ga]/([Ga] + [In]) grading is used to reduce Mo-NP/CIGS interface recombination.

Epitaxial growth of ultra-thin NbN films on AlxGa1−xN buffer-layers

International Nuclear Information System (INIS)

Krause, S; Meledin, D; Desmaris, V; Pavolotsky, A; Belitsky, V; Rudziński, M; Pippel, E

2014-01-01

The suitability of Al x Ga 1−x N epilayers to deposit onto ultra-thin NbN films has been demonstrated for the first time. High quality single-crystal films with 5 nm thickness confirmed by high resolution transmission electron microscopy (HRTEM) have been deposited in a reproducible manner by means of reactive DC magnetron sputtering at elevated temperatures and exhibit critical temperatures (T c ) as high as 13.2 K and residual resistivity ratio (RRR) ∼1 on hexagonal GaN epilayers. On increasing the Al content x in the Al x Ga 1−x N epilayer above 20%, a gradual deterioration of T c to 10 K was observed. Deposition of NbN on bare silicon substrates served as a reference and comparison. Excellent spatial homogeneity of the fabricated films was confirmed by R(T) measurements of patterned micro-bridges across the entire film area. The superconducting properties of these films were further characterized by critical magnetic field and critical current measurements. It is expected that the employment of GaN material as a buffer-layer for the deposition of ultra-thin NbN films will prospectively benefit terahertz electronics, particularly hot electron bolometer (HEB) mixers. (paper)

Characterization of Ultra thin chromium layers deposited ou to SiO2 using the Le-PIXE and the RB S techniques

International Nuclear Information System (INIS)

Zahraman, K.; Nsouli, B.; Roumie, M.

2007-01-01

In this paper, we demonstrate the ability of the Le-PIXE (Low Energy PIXE) technique, using proton energies < 1 MeV, for the monitoring of the thickness and the thickness uniformity of ultra thin (0.5 nm < t < 20 nm) chromium layers deposited onto quartz substrates. Chromium is a good candidate for obtaining conductive ultra thin layers on insulator substrates such as quartz (SiO2). The resistivity of such layers is highly related to the quality of the deposited chromium film. In order to optimize the deposition process, there is a need for rapid and accurate monitoring of such films (film thickness, thickness uniformity over a big surface...). The acquisition time needed to obtain results with less than 3-4 % precision was 5 minutes for the thinnest layers. The validation for the use of the Le-PIXE technique was checked by means of conventional RB S technique.

Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

Science.gov (United States)

Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

2018-07-01

Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

Ultra-Thin Solid-State Nanopores: Fabrication and Applications

Science.gov (United States)

Kuan, Aaron Tzeyang

Solid-state nanopores are a nanofluidic platform with unique advantages for single-molecule analysis and filtration applications. However, significant improvements in device performance and scalable fabrication methods are needed to make nanopore devices competitive with existing technologies. This dissertation investigates the potential advantages of ultra-thin nanopores in which the thickness of the membrane is significantly smaller than the nanopore diameter. Novel, scalable fabrication methods were first developed and then utilized to examine device performance for water filtration and single molecule sensing applications. Fabrication of nanometer-thin pores in silicon nitride membranes was achieved using a feedback-controlled ion beam method in which ion sputtering is arrested upon detection of the first few ions that drill through the membrane. Performing fabrication at liquid nitrogen temperatures prevents surface atom rearrangements that have previously complicated similar processes. A novel cross-sectional imaging method was also developed to allow careful examination of the full nanopore geometry. Atomically-thin graphene nanopores were fabricated via an electrical pulse method in which sub-microsecond electrical pulses applied across a graphene membrane in electrolyte solution are used to create a defect in the membrane and controllably enlarge it into a nanopore. This method dramatically increases the accuracy and reliability of graphene nanopore production, allowing consistent production of single nanopores down to subnanometer sizes. In filtration applications in which nanopores are used to selectively restrict the passage of dissolved contaminants, ultra-thin nanopores minimize the flow resistance, increasing throughput and energy-efficiency. The ability of graphene nanopores to separate different ions was characterized via ionic conductance and reversal potential measurements. Graphene nanopores were observed to conduct cations preferentially over

Ultra-thin lithium micro-batteries. Performances and applications; Microaccumulateurs ultra minces au lithium. Performances et applications

Energy Technology Data Exchange (ETDEWEB)

Martin, M.; Terrat, J.P. [Hydromecanique et frottement (HEF), 42 - Andrezieux Boutheon (France); Levasseur, A.; Vinatier, P.; Meunier, G. [Centre National de la Recherche Scientifique (CNRS), 33 - Talence (France). Institut de Chimie de la Matiere Condensee et Physique de Bordeaux

1996-12-31

This short paper (abstract) describes the characteristics and performances of prototypes of ultra-thin lithium micro-batteries (thickness < 0.2 mm) which can be incorporated into microelectronic circuits. (J.S.)

Ultra-thin lithium micro-batteries. Performances and applications; Microaccumulateurs ultra minces au lithium. Performances et applications

Energy Technology Data Exchange (ETDEWEB)

Martin, M; Terrat, J P [Hydromecanique et frottement (HEF), 42 - Andrezieux Boutheon (France); Levasseur, A; Vinatier, P; Meunier, G [Centre National de la Recherche Scientifique (CNRS), 33 - Talence (France). Institut de Chimie de la Matiere Condensee et Physique de Bordeaux

1997-12-31

This short paper (abstract) describes the characteristics and performances of prototypes of ultra-thin lithium micro-batteries (thickness < 0.2 mm) which can be incorporated into microelectronic circuits. (J.S.)

Advanced technique for ultra-thin residue inspection with sub-10nm thickness using high-energy back-scattered electrons

Science.gov (United States)

Han, Jin-Hee

2018-03-01

Recently the aspect ratio of capacitor and via hole of memory semiconductor device has been dramatically increasing in order to store more information in a limited area. A small amount of remained residues after etch process on the bottom of the high aspect ratio structure can make a critical failure in device operation. Back-scattered electrons (BSE) are mainly used for inspecting the defect located at the bottom of the high aspect ratio structure or analyzing the overlay of the multi-layer structure because these electrons have a high linearity with the direction of emission and a high kinetic energy above 50eV. However, there is a limitation on that it cannot detect ultra-thin residue material having a thickness of several nanometers because the surface sensitivity is extremely low. We studied the characteristics of BSE spectra using Monte Carlo simulations for several cases which the high aspect ratio structures have extreme microscopic residues. Based on the assumption that most of the electrons emitted without energy loss are localized on the surface, we selected the detection energy window which has a range of 20eV below the maximum energy of the BSE. This window section is named as the high-energy BSE region. As a result of comparing the detection sensitivity of the conventional and the high-energy BSE detection mode, we found that the detection sensitivity for the residuals which have 2nm thickness is improved by more than 10 times in the high-energy BSE mode. This BSE technology is a new inspection method that can greatly be improved the inspection sensitivity for the ultra-thin residual material presented in the high aspect ratio structure, and its application will be expanded.

Using an ultra-thin non-doped orange emission layer to realize high efficiency white organic light-emitting diodes with low efficiency roll-off

Energy Technology Data Exchange (ETDEWEB)

Zhu, Liping; Chen, Jiangshan; Ma, Dongge, E-mail: mdg1014@ciac.ac.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate University of the Chinese Academy of Sciences, Changchun 130022 (China); Zhao, Yongbiao [Luminous Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Zhang, Hongmei [Department of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China)

2014-06-28

By adopting an ultra-thin non-doped orange emission layer sandwiched between two blue emission layers, high efficiency white organic light-emitting diodes (WOLEDs) with reduced efficiency roll-off were fabricated. The optimized devices show a balanced white emission with Internationale de L'Eclairage of (0.41, 0.44) at the luminance of 1000 cd/m{sup 2}, and the maximum power efficiency, current efficiency (CE), and external quantum efficiency reach 63.2 lm/W, 59.3 cd/A, and 23.1%, which slightly shift to 53.4 lm/W, 57.1 cd/A, and 22.2% at 1000 cd/m{sup 2}, respectively, showing low efficiency roll-off. Detailed investigations on the recombination zone and the transient electroluminescence (EL) clearly reveal the EL processes of the ultra-thin non-doped orange emission layer in WOLEDs.

Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

Science.gov (United States)

Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

2014-05-13

The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

Optimized ultra-thin manganin alloy passivated fine-pitch damascene compatible bump-less Cu-Cu bonding at sub 200 °C for three-dimensional Integration applications

Science.gov (United States)

Panigrahi, Asisa Kumar; Hemanth Kumar, C.; Bonam, Satish; Ghosh, Tamal; Rama Krishna Vanjari, Siva; Govind Singh, Shiv

2018-02-01

Enhanced Cu diffusion, Cu surface passivation, and smooth surface at the bonding interface are the key essentials for high quality Cu-Cu bonding. Previously, we have demonstrated optimized 3 nm thin Manganin metal-alloy passivation from oxidation and also helps to reduce the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrated an ultra fine-pitch (indication of high quality bonding for future multilayer integrations. Furthermore, electrical characterization of the bonded structure was performed under various robust conditions as per International Technology Roadmap for Semiconductors (ITRS Roadmap) in order to satisfy the stability of the bonded structure.

A novel high performance, ultra thin heat sink for electronics

International Nuclear Information System (INIS)

Escher, W.; Michel, B.; Poulikakos, D.

2010-01-01

We present an ultra thin heat sink for electronics, combining optimized impinging slot-jets, micro-channels and manifolds for efficient cooling. We first introduce a three-dimensional numerical model of the heat transfer structure, to investigate its hydrodynamic and thermal performance and its sensitivity to geometric parameters. In a second step we propose a three-dimensional hydrodynamic numerical model representing the complete system. Based on this model we design a novel manifold providing uniform fluid distribution. In order to save computational time a simpler semi-empirical model is proposed and validated. The semi-empirical model allows a robust optimization of the heat sink geometric parameters. The design is optimized for a 2 x 2 cm 2 chip and provides a total thermal resistance of 0.087 cm 2 K/W for flow rates 2 for a temperature difference between fluid inlet and chip of 65 K.

High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

International Nuclear Information System (INIS)

Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

2014-01-01

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

Creation of a longitudinally polarized subwavelength hotspot with an ultra-thin planar lens: vectorial Rayleigh–Sommerfeld method

International Nuclear Information System (INIS)

Ye, Huapeng; Qiu, Cheng-Wei; Huang, Kun; Yeo, Swee Ping; Teng, Jinghua; Luk’yanchuk, Boris

2013-01-01

This letter shows how a longitudinally polarized hotspot can be created by a planar ultra-thin lens that beats the diffraction limit. On the imaging plane, a subwavelength optical resolution 0.39λ with almost purely longitudinal electric component has been demonstrated in air ambient. This novel paradigm addresses simultaneously both longitudinal polarization and deep sub-diffraction imaging, by a planar lens composed of ultra-thin opaque concentric annuli. The vectorial Rayleigh–Sommerfeld (VRS) approach, offering the advantage of significant reduction in computation, has been developed for a particular optimization of a flat lens with full control of polarization. Empowered by the robustness of VRS in dealing with polarization states, the proposed roadmap may be universally and efficiently integrated with other optimization algorithms to design super-resolution imaging with controlled polarization states at any wavelength without luminescence of the object. The lens, which is empowered by the proposed method, opens an avenue for the first time toward a highly integrated imaging system with advanced functionalities in far-field super-imaging, tailored polarization states and flat ultra-thin geometry simultaneously. (letter)

Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

KAUST Repository

Wu, Xing

2011-08-29

Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.

Film-thickness dependence of structure formation in ultra-thin polymer blend films

CERN Document Server

Gutmann, J S; Stamm, M

2002-01-01

We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

Native oxidation of ultra high purity Cu bulk and thin films

International Nuclear Information System (INIS)

Iijima, J.; Lim, J.-W.; Hong, S.-H.; Suzuki, S.; Mimura, K.; Isshiki, M.

2006-01-01

The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V s = 0 V) showed lower oxidation resistance. The growth of Cu 2 O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu 2 O layer after a critical time

Effects of Cold Rolling Reduction and Initial Goss Grains Orientation on Texture Evolution and Magnetic Performance of Ultra-thin Grain-oriented Silicon Steel

Directory of Open Access Journals (Sweden)

LIANG Rui-yang

2017-06-01

Full Text Available The ultra-thin grain-oriented silicon steel strips with a thickness of 0.06-0.12mm were produced by one-step-rolling methods with different Goss-orientation of grain-oriented silicon steel sheets. The effect of cold rolling reduction and initial Goss-orientation of samples on texture evolution and magnetic performance of ultra-thin grain-oriented silicon steel strips was studied by EBSD. The result shows that with the increase of cold rolling reduction and decrease of strips thickness, the recrystallization texture is enhanced after annealing.When the cold rolling reduction is 70%,RD//〈001〉 recrystallization texture is the sharpest, and the magnetic performance is the best. The higher degree of Goss orientation in initial sample is, the better magnetic performance of ultra-thin grain-oriented silicon steel.Therefore, for producing an ultra-thin grain-oriented silicon steel with high performance, a material with a concentrated orientation of Goss grains can be used.

Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

Science.gov (United States)

Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

2012-12-14

The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions

International Nuclear Information System (INIS)

Avilés Félix, L; Sirena, M; Agüero Guzmán, L A; González Sutter, J; Pons Vargas, S; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

2012-01-01

The transport properties of ultra-thin SrTiO 3 (STO) layers grown over YBa 2 Cu 3 O 7 electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions. (paper)

High quality atomically thin PtSe2 films grown by molecular beam epitaxy

Science.gov (United States)

Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

2017-12-01

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

Fabrication of high quality, ultra-long fiber Bragg gratings: up to 2 million periods in phase.

Science.gov (United States)

Gagné, Mathieu; Loranger, Sébastien; Lapointe, Jerome; Kashyap, Raman

2014-01-13

The fabrication and characterization of high quality ultra-long (up to 1m) fiber Bragg gratings (FBGs) is reported. A moving phase mask and an electro-optic phase-modulation (EOPM) based interferometer are used with a high precision 1-meter long translation stage and compared. A novel interferometer position feedback scheme to simplify the fabrication process is proposed and analyzed. The ultra-long uniform FBGs show near perfect characteristics of a few picometers bandwidth, symmetrical, near theory-matching group-delay and transmission spectra. Grating characterization using optical backscattering reflectometry and chirped FBGs are also demonstrated. Limitations of the schemes are discussed.

Role of interlayer coupling in ultra thin MoS2

KAUST Repository

Cheng, Yingchun; Zhu, Zhiyong; Schwingenschlö gl, Udo

2012-01-01

The effects of interlayer coupling on the vibrational and electronic properties of ultra thin MoS 2 were studied by ab initio calculations. For smaller slab thickness, the interlayer distance is significantly elongated because of reduced interlayer

Nanometric thin film membranes manufactured on square meter scale: ultra-thin films for CO 2 capture

KAUST Repository

Yave, Wilfredo; Car, Anja; Wind, Jan; Peinemann, Klaus Viktor

2010-01-01

Miniaturization and manipulation of materials at nanometer scale are key challenges in nanoscience and nanotechnology. In membrane science and technology, the fabrication of ultra-thin polymer films (defect-free) on square meter scale with uniform

Transport properties of ultra-thin granular YBa2Cu3O7−δ nanobridges

International Nuclear Information System (INIS)

Bar, E.; Levi, D.; Koren, G.; Shaulov, A.; Yeshurun, Y.

2014-01-01

Highlights: • Nano bridges were patterned on laser ablated ultra-thin YBa 2 Cu 3 O 7 films. • Magneto-transport measurements reveal phenomena that are usually absent in the bulk. • Magnetoresistance (MR) oscillation point to effect of granularity. • Negative MR at low fields and negative MR slope at high fields were observed. • V-I curves exhibit voltage jumps at temperatures well below T c . - Abstract: Magneto-transport measurements in YBa 2 Cu 3 O 7 nanobridges, patterned on laser ablated ultra-thin films, reveal phenomena that are usually absent in the bulk of the material. These include broadening of the resistive transition, magnetoresistance oscillation, negative magnetoresistance at low fields, negative magnetoresistance slope at high fields, and V–I curves that exhibit voltage jumps at temperatures well below T c . These phenomena, attributed to the granular nature of the bridges, should be taken into account in any future attempts to utilize such bridges in technological applications

Mixed-Penetrant Sorption in Ultra-Thin Films of Polymer of Intrinsic Microporosity PIM-1

KAUST Repository

Ogieglo, Wojciech; Furchner, Andreas; Ghanem, Bader; Ma, Xiao-Hua; Pinnau, Ingo; Wessling, Matthias

2017-01-01

Mixed penetrant sorption into ultra-thin films of a super-glassy polymer of intrinsic microporosity (PIM-1) was studied for the first time by using interference-enhanced in-situ spectroscopic ellipsometry. PIM-1 swelling and the concurrent changes in its refractive index were determined in ultra-thin (12 - 14 nm) films exposed to pure and mixed penetrants. The penetrants included water, n-hexane and ethanol and were chosen based on their significantly different penetrant-penetrant and penetrant-polymer affinities. This allowed studying microporous polymer responses at diverse ternary compositions and revealed effects such as competition for the sorption sites (for water / n-hexane or ethanol / n-hexane) or enhancement in sorption of typically weakly sorbing water in the presence of more highly sorbing ethanol. The results reveal details of the mutual sorption effects which often complicate comprehension of glassy polymers' behavior in applications such as high-performance membranes, adsorbents or catalysts. Mixed-penetrant effects are typically very challenging to study directly and their understanding is necessary owing to a broadly recognized inadequacy of simple extrapolations from measurements in pure component environment.

Mixed-Penetrant Sorption in Ultra-Thin Films of Polymer of Intrinsic Microporosity PIM-1

KAUST Repository

Ogieglo, Wojciech

2017-10-12

Mixed penetrant sorption into ultra-thin films of a super-glassy polymer of intrinsic microporosity (PIM-1) was studied for the first time by using interference-enhanced in-situ spectroscopic ellipsometry. PIM-1 swelling and the concurrent changes in its refractive index were determined in ultra-thin (12 - 14 nm) films exposed to pure and mixed penetrants. The penetrants included water, n-hexane and ethanol and were chosen based on their significantly different penetrant-penetrant and penetrant-polymer affinities. This allowed studying microporous polymer responses at diverse ternary compositions and revealed effects such as competition for the sorption sites (for water / n-hexane or ethanol / n-hexane) or enhancement in sorption of typically weakly sorbing water in the presence of more highly sorbing ethanol. The results reveal details of the mutual sorption effects which often complicate comprehension of glassy polymers\\' behavior in applications such as high-performance membranes, adsorbents or catalysts. Mixed-penetrant effects are typically very challenging to study directly and their understanding is necessary owing to a broadly recognized inadequacy of simple extrapolations from measurements in pure component environment.

How Do Organic Vapors Swell Ultra-Thin PIM-1 Films?

KAUST Repository

Ogieglo, Wojciech; Rahimi, Khosrow; Rauer, Sebastian Bernhard; Ghanem, Bader; Ma, Xiao-Hua; Pinnau, Ingo; Wessling, Matthias

2017-01-01

Dynamic sorption of ethanol and toluene vapor into ultra-thin supported PIM-1 films down to 6 nm are studied with a combination of in-situ spectroscopic ellipsometry and in-situ X-ray reflectivity. Both ethanol and toluene significantly swell

Thin film surface processing by UltraShort Laser Pulses (USLP)

NARCIS (Netherlands)

Scorticati, D.; Skolski, J.Z.P.; Römer, G.R.B.E.; Huis in 't Veld, A.J.; Workum, M.; Theelen, M.J.; Zeman, M.

2012-01-01

In this work, we studied the feasibility of surface texturing of thin molybdenum layers on a borosilicate glass substrate with Ultra-Short Laser Pulses (USLP). Large areas of regular diffraction gratings were produced consisting of Laserinduced periodic surface structures (LIPSS). A short pulsed

Industry-relevant magnetron sputtering and cathodic arc ultra-high vacuum deposition system for in situ x-ray diffraction studies of thin film growth using high energy synchrotron radiation.

Science.gov (United States)

Schroeder, J L; Thomson, W; Howard, B; Schell, N; Näslund, L-Å; Rogström, L; Johansson-Jõesaar, M P; Ghafoor, N; Odén, M; Nothnagel, E; Shepard, A; Greer, J; Birch, J

2015-09-01

We present an industry-relevant, large-scale, ultra-high vacuum (UHV) magnetron sputtering and cathodic arc deposition system purposefully designed for time-resolved in situ thin film deposition/annealing studies using high-energy (>50 keV), high photon flux (>10(12) ph/s) synchrotron radiation. The high photon flux, combined with a fast-acquisition-time (film formation processes. The high-energy synchrotron-radiation based x-rays result in small scattering angles (industry-relevant processes. We openly encourage the materials research community to contact us for collaborative opportunities using this unique and versatile scientific instrument.

Design of an ultra-thin dual band infrared system

Science.gov (United States)

Du, Ke; Cheng, Xuemin; Lv, Qichao; Hu, YiFei

2014-11-01

The ultra-thin imaging system using reflective multiple-fold structure has smaller volume and less weight while maintaining high resolution compared with conventional optical systems. The multi-folded approach can significantly extend focal distance within wide spectral range without incurring chromatic aberrations. In this paper, we present a dual infrared imaging system of four-folded reflection with two air-spaced concentric reflective surfaces. The dual brand IR system has 107mm effective focal length, 0.7NA, +/-4° FOV, and 50mm effective aperture with 80mm outer diameter into a 25mm total thickness, which spectral response is 3~12μm.

High-Quality Ultra-Compact Grid Layout of Grouped Networks.

Science.gov (United States)

Yoghourdjian, Vahan; Dwyer, Tim; Gange, Graeme; Kieffer, Steve; Klein, Karsten; Marriott, Kim

2016-01-01

Prior research into network layout has focused on fast heuristic techniques for layout of large networks, or complex multi-stage pipelines for higher quality layout of small graphs. Improvements to these pipeline techniques, especially for orthogonal-style layout, are difficult and practical results have been slight in recent years. Yet, as discussed in this paper, there remain significant issues in the quality of the layouts produced by these techniques, even for quite small networks. This is especially true when layout with additional grouping constraints is required. The first contribution of this paper is to investigate an ultra-compact, grid-like network layout aesthetic that is motivated by the grid arrangements that are used almost universally by designers in typographical layout. Since the time when these heuristic and pipeline-based graph-layout methods were conceived, generic technologies (MIP, CP and SAT) for solving combinatorial and mixed-integer optimization problems have improved massively. The second contribution of this paper is to reassess whether these techniques can be used for high-quality layout of small graphs. While they are fast enough for graphs of up to 50 nodes we found these methods do not scale up. Our third contribution is a large-neighborhood search meta-heuristic approach that is scalable to larger networks.

Ultra-thin infrared metamaterial detector for multicolor imaging applications.

Science.gov (United States)

Montoya, John A; Tian, Zhao-Bing; Krishna, Sanjay; Padilla, Willie J

2017-09-18

The next generation of infrared imaging systems requires control of fundamental electromagnetic processes - absorption, polarization, spectral bandwidth - at the pixel level to acquire desirable information about the environment with low system latency. Metamaterial absorbers have sparked interest in the infrared imaging community for their ability to enhance absorption of incoming radiation with color, polarization and/or phase information. However, most metamaterial-based sensors fail to focus incoming radiation into the active region of a ultra-thin detecting element, thus achieving poor detection metrics. Here our multifunctional metamaterial absorber is directly integrated with a novel mid-wave infrared (MWIR) and long-wave infrared (LWIR) detector with an ultra-thin (~λ/15) InAs/GaSb Type-II superlattice (T2SL) interband cascade detector. The deep sub-wavelength metamaterial detector architecture proposed and demonstrated here, thus significantly improves the detection quantum efficiency (QE) and absorption of incoming radiation in a regime typically dominated by Fabry-Perot etalons. Our work evinces the ability of multifunctional metamaterials to realize efficient wavelength selective detection across the infrared spectrum for enhanced multispectral infrared imaging applications.

Fabricating high-energy quantum dots in ultra-thin LiFePO4 nanosheets using a multifunctional high-energy biomolecule-ATP

DEFF Research Database (Denmark)

Zhang, X.D.; Bi, Z.Y.; He, W.

2014-01-01

By using a multifunctional high-energy biomolecule—adenosine triphosphate (ATP)—we fabricated highenergy quantum dots (HEQDs) with a feature size of less than 10 nm and used them in high-power lithium-ion batteries. We introduced high-energy phosphate bonds into the crystal structure of LiFePO4...... nanoparticles and synthesized the mesoporous biocarbon nanowire coated LiFePO4 with HEQDs (MBCNW-LFP-HEQDs) by using ATP as a phosphorus source, a nucleating agent, a structural template and a biocarbon source. HEGDs were homogeneously formed inside the ultra-thin LiFePO4 nanosheet and the mesoporous biocarbon...... nanowire network structure was coated on the surface of the nanosheet. In LiFePO4 nanoparticles, HEQDs result in more storage sites of Li+ ions and easier transfer kinetics of electrons and lithium ions, where the kinetic transformation path between LiFePO4 and FePO4 is rather different from the path...

Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxide

International Nuclear Information System (INIS)

Li, W.S.; Wu, Bill; Fan, Aki; Kuo, C.W.; Segovia, M.; Kek, H.A.

2005-01-01

Nitrogen concentration in the gate oxide plays a key role for 90 nm and below ULSI technology. Techniques like secondary ionization mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS) are commonly used for understanding N concentration. This paper describes the application of the carrier illuminationTM (CI) technique to measure the nitrogen concentration in ultra-thin gate oxides. A set of ultra-thin gate oxide wafers with different DPN (decoupled plasma nitridation) treatment conditions were measured using the CI technique. The CI signal has excellent correlation with the N concentration as measured by XPS

Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

Science.gov (United States)

Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2017-01-01

The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

Function and application of ultra thin films

Energy Technology Data Exchange (ETDEWEB)

Sasabe, Hiroyuki

1988-02-01

A film 10-100mm thick which is strong dynamically to some extent and has possibility to manifest fuctions of high degree different from the nature extrapolated from the normal thin film is called an ultra thin film. As an example of its concrete application, there is an electro-luminescence element which is made by laminating 5 layers of LB films of poly-L-phenylalanine on a n-GaP and has vapor-deposited gold electrodes. When voltage of 5V is imposed to it, light emission of 565nm can be observed and the emission efficiency of 2% is obtained. Besides, it has an excellent stability through the lapse of time. There is also a junction element and the ion concentration injected into macromolecule films of this element has a Gaussian distribution from the surface towards the direction of depth. Accordingly, the most active domain in terms of semiconductor as the result of doping is the location in the neighborhood of the peak. Furthermore, a photo memory is also proposed. It is applied to the artificial hemoglobine which is made of LB films, suggesting the feasibility of creating the artificial protein capable of functioning in the conditions in which the natural protein is unable to function. (5 figs, 1 tab, 7 refs)

Determining surface coverage of ultra-thin gold films from X-ray reflectivity measurements

International Nuclear Information System (INIS)

Kossoy, A.; Simakov, D.; Olafsson, S.; Leosson, K.

2013-01-01

The paper describes usage of X-ray reflectivity for characterization of surface coverage (i.e. film continuity) of ultra-thin gold films which are widely studied for optical, plasmonic and electronic applications. The demonstrated method is very sensitive and can be applied for layers below 1 nm. It has several advantages over other techniques which are often employed in characterization of ultra-thin metal films, such as optical absorption, Atomic Force Microscopy, Transmission Electron Microscopy or Scanning Electron Microscopy. In contrast to those techniques our method does not require specialized sample preparation and measurement process is insensitive to electrostatic charge and/or presence of surface absorbed water. We validate our results with image processing of Scanning Electron Microscopy images. To ensure precise quantitative analysis of the images we developed a generic local thresholding algorithm which allowed us to treat series of images with various values of surface coverage with similar image processing parameters. - Highlights: • Surface coverage/continuity of ultra-thin Au films (up to 7 nm) was determined. • Results from X-ray reflectivity were verified by scanning electron microscopy. • We developed local thresholding algorithm to treat non-homogeneous image contrast

CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

KAUST Repository

Ghoneim, Mohamed T.; Hanna, Amir; Hussain, Muhammad Mustafa

2014-01-01

Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

KAUST Repository

Ghoneim, Mohamed T.

2014-08-01

Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

Energy Technology Data Exchange (ETDEWEB)

Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

2011-12-15

Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

International Nuclear Information System (INIS)

Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

2011-01-01

Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Synchrotron-radiation XPS analysis of ultra-thin silane films: Specifying the organic silicon

Energy Technology Data Exchange (ETDEWEB)

Dietrich, Paul M., E-mail: paul.dietrich@yahoo.de [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Glamsch, Stephan [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Freie Universität Berlin, Institut für Chemie und Biochemie, Fabeckstr. 34/36, 14195 Berlin (Germany); Ehlert, Christopher [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Institut für Chemie, Universität Potsdam, Karl-Liebknecht-Straße 24-25, 14476 Potsdam (Germany); Lippitz, Andreas [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Kulak, Nora [Freie Universität Berlin, Institut für Chemie und Biochemie, Fabeckstr. 34/36, 14195 Berlin (Germany); Unger, Wolfgang E.S. [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany)

2016-02-15

Graphical abstract: - Highlights: • A synchrotron-based XPS method to analyze ultra-thin silane films is presented. • Specification and quantification of organic next to inorganic silicon is demonstrated. • Non-destructive chemical depth profiles of the silane monolayers were obtained. - Abstract: The analysis of chemical and elemental in-depth variations in ultra-thin organic layers with thicknesses below 5 nm is very challenging. Energy- and angle-resolved XPS (ER/AR-XPS) opens up the possibility for non-destructive chemical ultra-shallow depth profiling of the outermost surface layer of ultra-thin organic films due to its exceptional surface sensitivity. For common organic materials a reliable chemical in-depth analysis with a lower limit of the XPS information depth z{sub 95} of about 1 nm can be performed. As a proof-of-principle example with relevance for industrial applications the ER/AR-XPS analysis of different organic monolayers made of amino- or benzamidosilane molecules on silicon oxide surfaces is presented. It is demonstrated how to use the Si 2p core-level region to non-destructively depth-profile the organic (silane monolayer) – inorganic (SiO{sub 2}/Si) interface and how to quantify Si species, ranging from elemental silicon over native silicon oxide to the silane itself. The main advantage of the applied ER/AR-XPS method is the improved specification of organic from inorganic silicon components in Si 2p core-level spectra with exceptional low uncertainties compared to conventional laboratory XPS.

Mesoporous polyaniline film on ultra-thin graphene sheets for high performance supercapacitors

Science.gov (United States)

Wang, Qian; Yan, Jun; Fan, Zhuangjun; Wei, Tong; Zhang, Milin; Jing, Xiaoyan

2014-02-01

A facile approach has been developed to fabricate mesoporous PANI film on ultra-thin graphene nanosheet (G-mPANI) hybrid by in situ polymerization using graphene-mesoporous silica composite as template. Due to its mesoporous structure, over-all conductive network, G-mPANI electrode displays a specific capacitance of 749 F g-1 at 0.5 A g-1 with excellent rate capability (remains 73% even at 5.0 A g-1), much higher than that of pristine PANI electrode (315 F g-1 at 0.5 A g-1, 39% retention at 5.0 A g-1) in 1 mol L-1 H2SO4 aqueous solution. More interestingly, the G-mPANI hybrid can maintain 88% of its initial capacitance compared to 45% for pristine PANI after 1000 cycles, suggesting a superior electrochemical cyclic stability.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Yu-Kuang Liao

2017-04-01

Full Text Available Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD and chemical bath deposition (CBD as used by the Cu(In,GaSe2 (CIGS thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

Structural studies on Langmuir-Blodgett ultra-thin films on tin (IV) stearate using X-ray diffraction technique

International Nuclear Information System (INIS)

Mohamad Deraman; Muhamad Mat Salleh; Mohd Ali Sulaiman; Mohd Ali Sufi

1991-01-01

X-ray diffraction measurements were carried out on Langmuir-Blodgett (LB) ultra-thin films of tin (IV) stearate for different numbers of layers. The structural information such as interplanar spacing, unit cells spacing, molecular length and orientation of molecular chains were obtained from the diffraction data. This information is discussed and compared with that previously published for LB ultra-thin films of manganese stearate and cadmium stearate

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

Science.gov (United States)

Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

2016-05-01

Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V-1 sec-1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

Ultra-thin smart acoustic metasurface for low-frequency sound insulation

Science.gov (United States)

Zhang, Hao; Xiao, Yong; Wen, Jihong; Yu, Dianlong; Wen, Xisen

2016-04-01

Insulating low-frequency sound is a conventional challenge due to the high areal mass required by mass law. In this letter, we propose a smart acoustic metasurface consisting of an ultra-thin aluminum foil bonded with piezoelectric resonators. Numerical and experimental results show that the metasurface can break the conventional mass law of sound insulation by 30 dB in the low frequency regime (sound insulation performance is attributed to the infinite effective dynamic mass density produced by the smart resonators. It is also demonstrated that the excellent sound insulation property can be conveniently tuned by simply adjusting the external circuits instead of modifying the structure of the metasurface.

Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

Science.gov (United States)

Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-10-06

Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

Ultra-High-Resolution Computed Tomography of the Lung: Image Quality of a Prototype Scanner

OpenAIRE

Kakinuma, Ryutaro; Moriyama, Noriyuki; Muramatsu, Yukio; Gomi, Shiho; Suzuki, Masahiro; Nagasawa, Hirobumi; Kusumoto, Masahiko; Aso, Tomohiko; Muramatsu, Yoshihisa; Tsuchida, Takaaki; Tsuta, Koji; Maeshima, Akiko Miyagi; Tochigi, Naobumi; Watanabe, Shun-ichi; Sugihara, Naoki

2015-01-01

Purpose: The image noise and image quality of a prototype ultra-high-resolution computed tomography (U-HRCT) scanner was evaluated and compared with those of conventional high-resolution CT (C-HRCT) scanners. Materials and Methods: This study was approved by the institutional review board. A U-HRCT scanner prototype with 0.25 mm × 4 rows and operating at 120 mAs was used. The C-HRCT images were obtained using a 0.5 mm × 16 or 0.5 mm × 64 detector-row CT scanner operating at 150 mAs. Images fr...

Enhancement of Heat and Mass Transfer in Mechanically Contstrained Ultra Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kevin Drost; Jim Liburdy; Brian Paul; Richard Peterson

2005-01-01

Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be significantly enhanced by the use of an ultra-thin film gas/liquid contactor. This device employs microtechnology-based structures to mechanically constrain the gas/liquid interface. This technology can be used to form very thin liquid films with a film thickness less then 100 microns while still allowing gas/liquid contact. When the resistance to mass transfer in gas desorption and absorption is dominated by diffusion in the liquid phase the use of extremely thin films (<100 microns) for desorption and absorption can radically reduce the size of a gas desorber or absorber. The development of compact absorbers and desorbers enables the deployment of small heat-actuated absorption heat pumps for distributed space heating and cooling applications, heat-actuated automotive air conditioning, manportable cooling, gas absorption units for the chemical process industry and the development of high capacity CO{sub 2} absorption devices for CO{sub 2} collection and sequestration. The energy

COVALENTLY ATTACHED MULTILAYER ULTRA-THIN FILMS FROM DIAZORESIN AND CALIXARENES

Institute of Scientific and Technical Information of China (English)

Zhao-hui Yang; Wei-xiao Cao

2003-01-01

A kind of photosensitive ultra-thin film was fabricated from diazoresin (DR) and various calixarenes by using the self-assembly technique. Under UV irradiation both the ionic- and hydrogen bonds between the layers of the film will convert into covalent bonds. As a result, the stability of the film toward polar solvents increases dramatically.

Culturing of primary rat neurons and glia on ultra-thin parylene-C

International Nuclear Information System (INIS)

Unsworth, C.P.; Delivopoulos, E.; Murray, A.F.

2010-01-01

Full text: In this article, we will describe how we have successfully cultured dissociated embryonic cortical neurons and glia from the postnatal rat hippocampus on extremely thin layers (up to 10 nm) of Parylene-C on a silicon dioxide substrate. Silicon wafers were oxidised, deposited with the biomaterial, Parylene-C, photo-lithographically patterned and plasma etched to produce chips that consisted of lines of Paryl ene-C with varying widths, thickness and lengths. The chips produced were then immersed in Horse Serum and plated with the cells. Ratios of Neurons; Glia; Cell Body were measured on, adjacent to and away from the Parylene-C. Our initial results show how these ratios remained roughly constant for ultra-thin Parylene-C thicknesses of 10 nm as compared to a benchmark thickness of 100 nm (where such cells are known to grow well). Thus, our findings demonstrate that it is possible to culture primary rat neurons and glia to practically cell membrane thicknesses of Parylene-C. Being able to culture cells on such ultra thin levels of Parylene-C will open up the possibility to develop Multi-Electrode Arrays (MEA) that can capacitively couple embedded electrodes through the parylene to the cells on its surface. Thus, providing a neat, insulated passive electrode. Only the ultra-thin thicknesses of Parylene demonstrated here would allow for the rea isation of such a technology. Hence, the outcome of this work, will be of great interest to the Neuroengineering and the Multi-Electrode Array (MEA) community, as an alternative material for the fabric tion of passive electrodes, used in capacitive coupling mode.

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Crovetto, Andrea; Yan, Chang

2017-01-01

We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the ......We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed...

Low temperature synthesis of Mo2C/W2C superlattices via ultra-thin modulated reactants

International Nuclear Information System (INIS)

Johnson, C.D.; Johnson, D.C.

1996-01-01

The authors report here a synthesis method of preparing carbide superlattices using ultra-thin modulated reactants. Initial investigations into the synthesis of the binary systems, Mo 2 C and W 2 C using ultra-thin modulated reactants revealed that both can be formed at relatively low temperatures (500 and 600 C respectively). DSC and XRD data suggested a two step reaction pathway involving interdiffusion of the initial modulated reactant followed by crystallization of the final product, if the modulation length is on the order of 10 angstrom. This information was used to form Mo 2 C/W 2 C superlattices using the structure of the ultra-thin modulated reactant to control the final superlattice period. Relatively large superlattice modulations were kinetically trapped by having several repeat units of each binary within the total repeat of the initial reactant. DSC and XRD data again are consistent with a two step reaction pathway leading to the formation of carbide superlattices

Field emission mechanism from a single-layer ultra-thin semiconductor film cathode

International Nuclear Information System (INIS)

Duan Zhiqiang; Wang Ruzhi; Yuan Ruiyang; Yang Wei; Wang Bo; Yan Hui

2007-01-01

Field emission (FE) from a single-layer ultra-thin semiconductor film cathode (SUSC) on a metal substrate has been investigated theoretically. The self-consistent quantum FE model is developed by synthetically considering the energy band bending and electron scattering. As a typical example, we calculate the FE properties of ultra-thin AlN film with an adjustable film thickness from 1 to 10 nm. The calculated results show that the FE characteristic is evidently modulated by varying the film thickness, and there is an optimum thickness of about 3 nm. Furthermore, a four-step FE mechanism is suggested such that the distinct FE current of a SUSC is rooted in the thickness sensitivity of its quantum structure, and the optimum FE properties of the SUSC should be attributed to the change in the effective potential combined with the attenuation of electron scattering

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Directory of Open Access Journals (Sweden)

Jingyu Shen

2018-01-01

Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

Ultra thin hydro-films based on lactose-crosslinked fish gelatin for wound healing applications.

Science.gov (United States)

Etxabide, Alaitz; Vairo, Claudia; Santos-Vizcaino, Edorta; Guerrero, Pedro; Pedraz, Jose Luis; Igartua, Manoli; de la Caba, Koro; Hernandez, Rosa Maria

2017-09-15

This study focuses on the development and characterization of an ultra thin hydro-film based on lactose-mediated crosslinking of fish gelatin by Maillard reaction. Lactose results in the only efficient crosslinker able to produce resistant to handling hydro-films when compared to conventional crosslinkers such as glutaraldehyde or genipin (tested at 25 and 37°C in phosphate buffer saline solution (PBS)).The disappearance of the peak related to the N-containing groups (XPS) and the images obtained by SEM and AFM demonstrate the highly ordered nano-scaled structure of lactose-crosslinked gelatin, confirming the crosslinking efficiency. This dressing presents high hydrophilicity and mild occlusivity, as shown by the swelling curve (max swelling at 5min) and by the occlusion factor of 25.17±0.99%, respectively. It demonstrates high stability to hydrolysis or cell-mediated degradation. Moreover, ISO 10993-5:2009 biocompatibility assay results in undetectable cytotoxicity effects. Spreading, adhesion and proliferation assays confirm the excellent adaptability of the cells onto the hydro-film surface without invading the dressing. Finally, the hydro-film enables the controlled delivery of therapeutic factors, such as the epidermal growth factor (EGF). This study demonstrates that lactose-mediated crosslinking is able to produce ultra thin gelatin hydro-films with suitable properties for biomedical applications, such as wound healing. Copyright © 2017 Elsevier B.V. All rights reserved.

How Do Organic Vapors Swell Ultra-Thin PIM-1 Films?

KAUST Repository

Ogieglo, Wojciech

2017-06-22

Dynamic sorption of ethanol and toluene vapor into ultra-thin supported PIM-1 films down to 6 nm are studied with a combination of in-situ spectroscopic ellipsometry and in-situ X-ray reflectivity. Both ethanol and toluene significantly swell the PIM-1 matrix and, at the same time, induce persistent structural relaxations of the frozen-in glassy PIM-1 morphology. For ethanol below 20 nm three effects were identified. First, the swelling magnitude at high vapor pressures is reduced by about 30% as compared to thicker films. Second, at low penetrant activities (below 0.3 p/p0) films below 20 nm are able to absorb slightly more penetrant as compared with thicker films despite similar swelling magnitude. Third, for the ultra-thin films the onset of the dynamic penetrant-induced glass transition Pg has been found to shift to higher values indicating higher resistance to plasticization. All of these effects are consistent with a view where immobilization of the super-glassy PIM-1 at the substrate surface leads to an arrested, even more rigid and plasticization-resistant, yet still very open, microporous structure. PIM-1 in contact with the larger and more condensable toluene shows very complex, heterogeneous swelling dynamics and two distinct penetrant-induced relaxation phenomena, probably associated with the film outer surface and the bulk, are detected. Following the direction of the penetrant\\'s diffusion the surface seems to plasticize earlier than the bulk and the two relaxations remain well separated down to 6 nm film thickness, where they remarkably merge to form just a single relaxation.

Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

International Nuclear Information System (INIS)

Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman

2016-01-01

Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatch between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or

Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

Energy Technology Data Exchange (ETDEWEB)

Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd [Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1205 (Bangladesh)

2016-05-21

Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatch between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

Energy Technology Data Exchange (ETDEWEB)

Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices

Directory of Open Access Journals (Sweden)

Jephias Gwamuri

2016-01-01

Full Text Available The opportunity for substantial efficiency enhancements of thin film hydrogenated amorphous silicon (a-Si:H solar photovoltaic (PV cells using plasmonic absorbers requires ultra-thin transparent conducting oxide top electrodes with low resistivity and high transmittances in the visible range of the electromagnetic spectrum. Fabricating ultra-thin indium tin oxide (ITO films (sub-50 nm using conventional methods has presented a number of challenges; however, a novel method involving chemical shaving of thicker (greater than 80 nm RF sputter deposited high-quality ITO films has been demonstrated. This study investigates the effect of oxygen concentration on the etch rates of RF sputter deposited ITO films to provide a detailed understanding of the interaction of all critical experimental parameters to help create even thinner layers to allow for more finely tune plasmonic resonances. ITO films were deposited on silicon substrates with a 98-nm, thermally grown oxide using RF magnetron sputtering with oxygen concentrations of 0, 0.4 and 1.0 sccm and annealed at 300 °C air ambient. Then the films were etched using a combination of water and hydrochloric and nitric acids for 1, 3, 5 and 8 min at room temperature. In-between each etching process cycle, the films were characterized by X-ray diffraction, atomic force microscopy, Raman Spectroscopy, 4-point probe (electrical conductivity, and variable angle spectroscopic ellipsometry. All the films were polycrystalline in nature and highly oriented along the (222 reflection. Ultra-thin ITO films with record low resistivity values (as low as 5.83 × 10−4 Ω·cm were obtained and high optical transparency is exhibited in the 300–1000 nm wavelength region for all the ITO films. The etch rate, preferred crystal lattice growth plane, d-spacing and lattice distortion were also observed to be highly dependent on the nature of growth environment for RF sputter deposited ITO films. The structural, electrical

Controlling the competing magnetic anisotropy energies in FineMET amorphous thin films with ultra-soft magnetic properties

Directory of Open Access Journals (Sweden)

Ansar Masood

2017-05-01

Full Text Available Thickness dependent competing magnetic anisotropy energies were investigated to explore the global magnetic behaviours of FineMET amorphous thin films. A dominant perpendicular magnetization component in the as-deposited state of thinner films was observed due to high magnetoelastic anisotropy energy which arises from stresses induced at the substrate-film interface. This perpendicular magnetization component decreases with increasing film thickness. Thermal annealing at elevated temperature revealed a significant influence on the magnetization state of the FineMET thin films and controlled annealing steps leads to ultra-soft magnetic properties, making these thin films alloys ideal for a wide range of applications.

Heat wave propagation in a thin film irradiated by ultra-short laser pulses

International Nuclear Information System (INIS)

Yoo, Jae Gwon; Kim, Cheol Jung; Lim, C. H.

2004-01-01

A thermal wave solution of a hyperbolic heat conduction equation in a thin film is developed on the basis of the Green's function formalism. Numerical computations are carried out to investigate the temperature response and the propagation of the thermal wave inside a thin film due to a heat pulse generated by ultra-short laser pulses with various laser pulse durations and thickness of the film

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

Science.gov (United States)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing

The production of ultra-thin layers of ion-exchange resin and metallic silver by electrospraying

International Nuclear Information System (INIS)

Wyllie, H.A.

1988-10-01

Highly efficient radioactive sources for use in radioisotope metrology have been prepared on ultra-thin layers of electrosprayed ion-exchange resin. The efficiency of these sources can be reduced for the purpose of radioactivity standardisation by coating them with conducting silver layers which are also produced by electrospraying. A description is given of improvements to the electrospraying methods, together with details of the rotating, oscillating source-mount turntable

The strength limits of ultra-thin copper films

Energy Technology Data Exchange (ETDEWEB)

Wiederhirn, Guillaume

2007-07-02

Elucidating size effects in ultra-thin films is essential to ensure the performance and reliability of MEMS and electronic devices. In this dissertation, the influence of a capping layer on the mechanical behavior of copper (Cu) films was analyzed. Passivation is expected to shut down surface diffusion and thus to alter the contributions of dislocation- and diffusion-based plasticity in thin films. Experiments were carried out on 25 nm to 2 {mu}m thick Cu films magnetron-sputtered onto amorphous-silicon nitride coated silicon (111) substrates. These films were capped with 10 nm of aluminum oxide or silicon nitride passivation without breaking vacuum either directly after Cu deposition or after a 500 C anneal. The evolution of thermal stresses in these films was investigated mainly by the substrate curvature method between -160 C and 500 C. Negligible differences were detected for the silicon nitride vs. the aluminum oxide passivated Cu films. The processing parameters associated with the passivation deposition also had no noticeable effect on the stress-temperature behavior of the Cu. However, the thermomechanical behavior of passivated Cu films strongly depended on the Cu film thickness. For films in the micrometer range, the influence of the passivation layer was not significant, which suggests that the Cu deformed mainly by dislocation plasticity. However, diffusional creep plays an increasing role with decreasing film thickness since it becomes increasingly difficult to nucleate dislocations in smaller grains. Size effects were investigated by plotting the stress at room temperature after thermal cycling as a function of the inverse film thickness. Between 2 {mu}m and 200 nm, the room temperature stress was inversely proportional to the film thickness. The passivation exerted a strong effect on Cu films thinner than 100 nm by effectively shutting down surface diffusion mechanisms. Since dislocation processes were also shut off in these ultra-thin films, they

Flexible suspended gate organic thin-film transistors for ultra-sensitive pressure detection

Science.gov (United States)

Zang, Yaping; Zhang, Fengjiao; Huang, Dazhen; Gao, Xike; di, Chong-An; Zhu, Daoben

2015-03-01

The utilization of organic devices as pressure-sensing elements in artificial intelligence and healthcare applications represents a fascinating opportunity for the next-generation electronic products. To satisfy the critical requirements of these promising applications, the low-cost construction of large-area ultra-sensitive organic pressure devices with outstanding flexibility is highly desired. Here we present flexible suspended gate organic thin-film transistors (SGOTFTs) as a model platform that enables ultra-sensitive pressure detection. More importantly, the unique device geometry of SGOTFTs allows the fine-tuning of their sensitivity by the suspended gate. An unprecedented sensitivity of 192 kPa-1, a low limit-of-detection pressure of <0.5 Pa and a short response time of 10 ms were successfully realized, allowing the real-time detection of acoustic waves. These excellent sensing properties of SGOTFTs, together with their advantages of facile large-area fabrication and versatility in detecting various pressure signals, make SGOTFTs a powerful strategy for spatial pressure mapping in practical applications.

Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se_2 solar cells

International Nuclear Information System (INIS)

Yin, Guanchao; Steigert, Alexander; Andrae, Patrick; Goebelt, Manuela; Latzel, Michael; Manley, Phillip; Lauermann, Iver; Christiansen, Silke; Schmid, Martina

2015-01-01

Graphical abstract: Plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se_2 (CIGSe) solar cells are investigated. Ag diffusion is successfully passivated by reducing the substrate temperature and introducing a 50 nm atomic layer deposition (ALD) prepared Al_2O_3 film. This clears the thermal obstacle in incorporating Ag nanoparticles in CIGSe solar cells. Simulations show that Ag nanoparticles have the potential to greatly enhance the light absorption in ultra-thin CIGSe solar cells. - Highlights: • Ag nanoparticles are able to diffuse through ITO substrate into CIGSe absorber even at a low substrate temperature of 440 °C. • The direction (inserting a dielectric passivation layer) to thermally block the Ag diffusion and the requirements for the passivation layer are indicated and generalized. • An atomic layer deposited Al_2O_3 layer is experimentally proved to be able to thermally passivate the Ag nanoparticles, which clears the thermal obstacle in using Ag nanoparticles as a back reflector in ultra-thin CIGSe solar cells. • It is theoretically proved that the Ag nanoparticles as a back reflector have the potential to effectively enhance the absorption in ultra-thin CIGSe solar cells. - Abstract: Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se_2 (CIGSe) solar cells is investigated. X-ray photoelectron spectroscopy results show that Ag nanoparticles underneath a Sn:In_2O_3 back contact could not be thermally passivated even at a low substrate temperature of 440 °C during CIGSe deposition. It is shown that a 50 nm thick Al_2O_3 film prepared by atomic layer deposition is able to block the diffusion of Ag, clearing the thermal obstacle in utilizing Ag nanoparticles as a back reflector in ultra-thin CIGSe solar cells. Via 3-D finite element optical simulation, it is proved that the Ag nanoparticles show the potential to contribute the effective absorption in CIGSe solar cells.

Anatase TiO2 hierarchical structures composed of ultra-thin nano-sheets exposing high percentage {0 0 1} facets and their application in quantum-dot sensitized solar cells

International Nuclear Information System (INIS)

Wu, Dapeng; Zhang, Shuo; Jiang, Shiwei; He, Jinjin; Jiang, Kai

2015-01-01

Graphical abstract: TiO 2 hierarchical structures assembled from ultra-thin nanosheets exposing ∼90% {0 0 1} facets were employed as photoanode materials to improve the performance of CdS/CdSe co-sensitized solar cells. - Highlights: • THSs composited of nanosheets exposing high percent {0 0 1} facets were prepared. • THSs improve the QDs loading amount and light scattering of the photoanode. • THSs suppress the carrier recombination and finally lead to ∼25% PCE improvement. - Abstract: TiO 2 hierarchical structures (THSs) composed of ultra-thin nano-sheets exposing ∼90% {0 0 1} facets were prepared via a hydrothermal method. Time dependent trails revealed the formation of THSs experienced a self-assemble process. The as-prepared product were used as the photoanode materials for CdS/CdSe co-sensitized solar cells, and the THSs/nanoparticle hybrid photoanode demonstrated a power conversion efficiency of 3.47%, indicating ∼25% improvement compared with the nanoparticle cell

Annealing of SnO2 thin films by ultra-short laser pulses

NARCIS (Netherlands)

Scorticati, D.; Illiberi, A.; Bor, T.; Eijt, S.W.H.; Schut, H.; Römer, G.R.B.E.; Lange, D.F. de; Huis In't Veld, A.J.

2014-01-01

Post-deposition annealing by ultra-short laser pulses can modify the optical properties of SnO2 thin films by means of thermal processing. Industrial grade SnO2 films exhibited improved optical properties after picosecond laser irradiation, at the expense of a slightly increased sheet resistance

Quality of Experience for Large Ultra-High-Resolution Tiled Displays with Synchronization Mismatch

Directory of Open Access Journals (Sweden)

Deshpande Sachin

2011-01-01

Full Text Available This paper relates to quality of experience when viewing images, video, or other content on large ultra-high-resolution displays made from individual display tiles. We define experiments to measure vernier acuity caused by synchronization mismatch for moving images. The experiments are used to obtain synchronization mismatch acuity threshold as a function of object velocity and as a function of occlusion or gap width. Our main motivation for measuring the synchronization mismatch vernier acuity is its relevance in the application of tiled display systems, which create a single contiguous image using individual discrete panels arranged in a matrix with each panel utilizing a distributed synchronization algorithm to display parts of the overall image. We also propose a subjective assessment method for perception evaluation of synchronization mismatch for large ultra-high-resolution tiled displays. For this, we design a synchronization mismatch measurement test video set for various tile configurations for various interpanel synchronization mismatch values. The proposed method for synchronization mismatch perception can evaluate tiled displays with or without tile bezels. The results from this work can help during design of low-cost tiled display systems, which utilize distributed synchronization mechanisms for a contiguous or bezeled image display.

Structural study and fabrication of nano-pattern on ultra thin film of Ag grown by magnetron sputtering

International Nuclear Information System (INIS)

Banerjee, S.; Mukherjee, S.; Kundu, S.

2001-01-01

We present the structural study of ultra thin Ag films using grazing incidence x-ray reflectivity and the modification of these films with the tip of an atomic force microscope. Ag thin films are deposited using dc magnetron sputtering on a Si(001) substrate. Initially, the growth of the film is carpet like and above a certain thickness (∼42 A) the film structure changes to form mounds. This ultra thin film of Ag having carpet-like growth can be modified by the tip of an atomic force microscope, which occurs due to the porous nature of the film. A periodic pattern of nanometer dimensions has been fabricated on this film using the atomic force microscope tip. (author)

Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

Energy Technology Data Exchange (ETDEWEB)

Wang, Chenggong; Wang, Congcong; Kauppi, John [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Liu, Xiaoliang [Institute for Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), Central South University, Changsha, Hunan 410083 (China); Gao, Yongli, E-mail: ygao@pas.rochester.edu [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Institute for Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), Central South University, Changsha, Hunan 410083 (China)

2015-08-28

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

Ultra-thin flexible polyimide neural probe embedded in a dissolvable maltose-coated microneedle

International Nuclear Information System (INIS)

Xiang, Zhuolin; Yen, Shih-Cheng; Zhang, Songsong; Lee, Chengkuo; Xue, Ning; Sun, Tao; Tsang, Wei Mong; Liao, Lun-De; Thakor, Nitish V

2014-01-01

The ultra-thin flexible polyimide neural probe can reduce the glial sheath growth on the probe body while its flexibility can minimize the micromotion between the probe and brain tissue. To provide sufficient stiffness for penetration purposes, we developed a drawing lithography technology for uniform maltose coating to make the maltose-coated polyimide neural probe become a stiff microneedle. The coating thicknesses under different temperature and the corresponding stiffness are studied. It has been proven that the coated maltose is dissolved by body fluids after implantation for a few seconds. Moreover, carbon nanotubes are coated on the neural probe recording electrodes to improve the charge delivery ability and reduce the impedance. Last but not least, the feasibility and recording characteristic of this ultra-thin polyimide neural probe embedded in a maltose-coated microneedle are further demonstrated by in vivo tests. (paper)

Ultra-thin flexible polyimide neural probe embedded in a dissolvable maltose-coated microneedle

Science.gov (United States)

Xiang, Zhuolin; Yen, Shih-Cheng; Xue, Ning; Sun, Tao; Mong Tsang, Wei; Zhang, Songsong; Liao, Lun-De; Thakor, Nitish V.; Lee, Chengkuo

2014-06-01

The ultra-thin flexible polyimide neural probe can reduce the glial sheath growth on the probe body while its flexibility can minimize the micromotion between the probe and brain tissue. To provide sufficient stiffness for penetration purposes, we developed a drawing lithography technology for uniform maltose coating to make the maltose-coated polyimide neural probe become a stiff microneedle. The coating thicknesses under different temperature and the corresponding stiffness are studied. It has been proven that the coated maltose is dissolved by body fluids after implantation for a few seconds. Moreover, carbon nanotubes are coated on the neural probe recording electrodes to improve the charge delivery ability and reduce the impedance. Last but not least, the feasibility and recording characteristic of this ultra-thin polyimide neural probe embedded in a maltose-coated microneedle are further demonstrated by in vivo tests.

Hadron-therapy beam monitoring: Towards a new generation of ultra-thin p-type silicon strip detectors

International Nuclear Information System (INIS)

Bouterfa, M.; Aouadi, K.; Bertrand, D.; Olbrechts, B.; Delamare, R.; Raskin, J. P.; Gil, E. C.; Flandre, D.

2011-01-01

Hadron-therapy has gained increasing interest for cancer treatment especially within the last decade. System commissioning and quality assurance procedures impose to monitor the particle beam using 2D dose measurements. Nowadays, several monitoring systems exist for hadron-therapy but all show a relatively high influence on the beam properties: indeed, most devices consist of several layers of materials that degrade the beam through scattering and energy losses. For precise treatment purposes, ultra-thin silicon strip detectors are investigated in order to reduce this beam scattering. We assess the beam size increase provoked by the Multiple Coulomb Scattering when passing through Si, to derive a target thickness. Monte-Carlo based simulations show a characteristic scattering opening angle lower than 1 mrad for thicknesses below 20 μm. We then evaluated the fabrication process feasibility. We successfully thinned down silicon wafers to thicknesses lower than 10 μm over areas of several cm 2 . Strip detectors are presently being processed and they will tentatively be thinned down to 20 μm. Moreover, two-dimensional TCAD simulations were carried out to investigate the beam detector performances on p-type Si substrates. Additionally, thick and thin substrates have been compared thanks to electrical simulations. Reducing the pitch between the strips increases breakdown voltage, whereas leakage current is quite insensitive to strips geometrical configuration. The samples are to be characterized as soon as possible in one of the IBA hadron-therapy facilities. For hadron-therapy, this would represent a considerable step forward in terms of treatment precision. (authors)

Anatase TiO{sub 2} hierarchical structures composed of ultra-thin nano-sheets exposing high percentage {0 0 1} facets and their application in quantum-dot sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Dapeng, E-mail: dpengwu@126.com [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Collaborative Innovation Center of Henan Province for Green Motive Power and Key Materials, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, Henan 453007 (China); Zhang, Shuo; Jiang, Shiwei; He, Jinjin [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Jiang, Kai [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Collaborative Innovation Center of Henan Province for Green Motive Power and Key Materials, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, Henan 453007 (China)

2015-03-05

Graphical abstract: TiO{sub 2} hierarchical structures assembled from ultra-thin nanosheets exposing ∼90% {0 0 1} facets were employed as photoanode materials to improve the performance of CdS/CdSe co-sensitized solar cells. - Highlights: • THSs composited of nanosheets exposing high percent {0 0 1} facets were prepared. • THSs improve the QDs loading amount and light scattering of the photoanode. • THSs suppress the carrier recombination and finally lead to ∼25% PCE improvement. - Abstract: TiO{sub 2} hierarchical structures (THSs) composed of ultra-thin nano-sheets exposing ∼90% {0 0 1} facets were prepared via a hydrothermal method. Time dependent trails revealed the formation of THSs experienced a self-assemble process. The as-prepared product were used as the photoanode materials for CdS/CdSe co-sensitized solar cells, and the THSs/nanoparticle hybrid photoanode demonstrated a power conversion efficiency of 3.47%, indicating ∼25% improvement compared with the nanoparticle cell.

Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size

Science.gov (United States)

Giaccherini, Andrea; Russo, Francesca; Carlà, Francesco; Guerri, Annalisa; Picca, Rosaria Anna; Cioffi, Nicola; Cinotti, Serena; Montegrossi, Giordano; Passaponti, Maurizio; Di Benedetto, Francesco; Felici, Roberto; Innocenti, Massimo

2018-02-01

Electrochemical Atomic Layer Deposition (E-ALD), exploiting surface limited electrodeposition of atomic layers, can easily grow highly ordered ultra-thin films and 2D structures. Among other compounds CuxZnyS grown by means of E-ALD on Ag(111) has been found particularly suitable for the solar energy conversion due to its band gap (1.61 eV). However its growth seems to be characterized by a micrometric thread-like structure, probably overgrowing a smooth ultra-thin films. On this ground, a SXRD investigation has been performed, to address the open questions about the structure and the growth of CuxZnyS by means of E-ALD. The experiment shows a pseudo single crystal pattern as well as a powder pattern, confirming that part of the sample grows epitaxially on the Ag(111) substrate. The growth of the film was monitored by following the evolution of the Bragg peaks and Debye rings during the E-ALD steps. Breadth and profile analysis of the Bragg peaks lead to a qualitative interpretation of the growth mechanism. This study confirms that Zn lead to the growth of a strained Cu2S-like structure, while the growth of the thread-like structure is probably driven by the release of the stress from the epitaxial phase.

Nitrogen-doped biomass-based ultra-thin carbon nanosheets with interconnected framework for High-Performance Lithium-Ion Batteries

Science.gov (United States)

Guo, Shasha; Chen, Yaxin; Shi, Liluo; Dong, Yue; Ma, Jing; Chen, Xiaohong; Song, Huaihe

2018-04-01

In this paper, a low-cost and environmental friendly synthesis strategy is proposed to fabricate nitrogen-doped biomass-based ultra-thin carbon nanosheets (N-CNS) with interconnected framework by using soybean milk as the carbon precursor and sodium chloride as the template. The interconnected porous nanosheet structure is beneficial for lithium ion transportation, and the defects introduced by pyridine nitrogen doping are favorable for lithium storage. When used as the anodes for lithium-ion batteries, the N-CNS electrode shows a high initial reversible specific capacity of 1334 mAh g-1 at 50 mA g-1, excellent rate performance (1212, 555 and 336 mAh g-1 at 0.05, 0.5 and 2 A g-1, respectively) and good cycling stability (355 mAh g-1 at 1 A g-1 after 1000 cycles). Furthermore, this study demonstrates the prospects of biomass and soybean milk, as the potential anode for the application of electrochemical energy storage devices.

Discharge amplified photo-emission from ultra-thin films applied to tuning work function of transparent electrodes in organic opto-electronic devices

International Nuclear Information System (INIS)

Gentle, A.R.; Smith, G.B.; Watkins, S.E.

2013-01-01

A novel photoemission technique utilising localised discharge amplification of photo-yield is reported. It enables fast, accurate measurement of work function and ionisation potential for ultra-thin buffer layers vacuum deposited onto single and multilayer transparent conducting electrodes for organic solar cells and OLED's. Work function in most traditional transparent electrodes has to be raised to maximise charge transfer while high transmittance and high conductance must be retained. Results are presented for a range of metal oxide buffers, which achieve this goal. This compact photo-yield spectroscopy tool with its fast turn-around has been a valuable development aid since ionisation potential can vary significantly as deposition conditions change slightly, and as ultra-thin films grow. It has also been useful in tracking the impact of different post deposition cleaning treatments along with some storage and transport protocols, which can adversely reduce ionisation potential and hence subsequent device performance.

Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

KAUST Repository

Ghoneim, Mohamed T.; Fahad, Hossain M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Sevilla, Galo T.; Alfaraj, Nasir; Lizardo, Ernesto B.; Hussain, Muhammad Mustafa

2015-01-01

In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

KAUST Repository

Ghoneim, Mohamed T.

2015-12-11

In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

Optical properties of vacuum deposited polyaniline ultra-thin film

International Nuclear Information System (INIS)

Wahab, M. R. A.; Din, M.; Yunus, W. M. M.; Hasan, Z. A.; Kasim, A.

2005-01-01

Full text: Ultra-thin films of emeraldine base (EB) and emeraldine salt (ES) form of polyaniline (PANi) were prepared using electron-gun vacuum deposition. Thickness range studied was between 100AA and 450AA. Dielectric permittivity of the films determined from Kretchmann Configuration Surface Plasmon Resonance (SPR) angles-scanning set-up show shifts and narrowing of the SPR dip. Absorbance spectra of S-polarized and P-polarized light show the aging effect on orientation of the film. The effect of aging on its conductivity and photoluminescence is also correlated to the surface morphology

Estimating the thickness of ultra thin sections for electron microscopy by image statistics

DEFF Research Database (Denmark)

Sporring, Jon; Khanmohammadi, Mahdieh; Darkner, Sune

2014-01-01

We propose a method for estimating the thickness of ultra thin histological sections by image statistics alone. Our method works for images, that are the realisations of a stationary and isotropic stochastic process, and it relies on the existence of statistical image-measures that are strictly m...

Wavelength-tunable colloidal quantum dot laser on ultra-thin flexible glass

Energy Technology Data Exchange (ETDEWEB)

Foucher, C.; Guilhabert, B.; Laurand, N.; Dawson, M. D. [Institute of Photonics, SUPA, University of Strathclyde, Glasgow (United Kingdom)

2014-04-07

A mechanically flexible and wavelength-tunable laser with an ultra-thin glass membrane as substrate is demonstrated. The optically pumped hybrid device has a distributed feedback cavity that combines a colloidal quantum dot gain film with a grating-patterned polymeric underlayer, all on a 30-μm thick glass sheet. The total thickness of the structure is only 75 μm. The hybrid laser has an average threshold fluence of 450 ± 80 μJ/cm{sup 2} (for 5-ns excitation pulses) at an emitting wavelength of 607 nm. Mechanically bending the thin-glass substrate enables continuous tuning of the laser emission wavelength over an 18-nm range, from 600 nm to 618 nm. The correlation between the wavelength tunability and the mechanical properties of the thin laser structure is verified theoretically and experimentally.

Ultra-high temperature direct propulsion

International Nuclear Information System (INIS)

Araj, K.J.; Slovik, G.; Powell, J.R.; Ludewig, H.

1987-01-01

Potential advantages of ultra-high exhaust temperature (3000 K - 4000 K) direct propulsion nuclear rockets are explored. Modifications to the Particle Bed Reactor (PBR) to achieve these temperatures are described. Benefits of ultra-high temperature propulsion are discussed for two missions - orbit transfer (ΔV = 5546 m/s) and interplanetary exploration (ΔV = 20000 m/s). For such missions ultra-high temperatures appear to be worth the additional complexity. Thrust levels are reduced substantially for a given power level, due to the higher enthalpy caused by partial disassociation of the hydrogen propellant. Though technically challenging, it appears potentially feasible to achieve such ultra high temperatures using the PBR

Growth of high quality large area MgB2 thin films by reactive evaporation

OpenAIRE

Moeckly, Brian H.; Ruby, Ward S.

2006-01-01

We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...

High-coercivity FePt nanoparticle assemblies embedded in silica thin films

International Nuclear Information System (INIS)

Yan, Q; Purkayastha, A; Singh, A P; Li, H; Ramanath, G; Li, A; Ramanujan, R V

2009-01-01

The ability to process assemblies using thin film techniques in a scalable fashion would be a key to transmuting the assemblies into manufacturable devices. Here, we embed FePt nanoparticle assemblies into a silica thin film by sol-gel processing. Annealing the thin film composite at 650 deg. C transforms the chemically disordered fcc FePt phase into the fct phase, yielding magnetic coercivity values H c >630 mT. The positional order of the particles is retained due to the protection offered by the silica host. Such films with assemblies of high-coercivity magnetic particles are attractive for realizing new types of ultra-high-density data storage devices and magneto-composites.

Axial ion channeling patterns from ultra-thin silicon membranes

International Nuclear Information System (INIS)

Motapothula, M.; Dang, Z.Y.; Venkatesan, T.; Breese, M.B.H.; Rana, M.A.; Osman, A.

2012-01-01

We present channeling patterns produced by MeV protons transmitted through 55 nm thick [0 0 1] silicon membranes showing the early evolution of the axially channeled beam angular distribution for small tilts away from the [0 0 1], [0 1 1] and [1 1 1] axes. Instead of a ring-like “doughnut” distribution previously observed at small tilts to major axes in thicker membranes, geometric shapes such as squares and hexagons are observed along different axes in ultra-thin membranes. The different shapes arise because of the highly non-equilibrium transverse momentum distribution of the channeled beam during its initial propagation in the crystal and the reduced multiple scattering which allows the fine angular structure to be resolved. We describe a simple geometric construction of the intersecting planar channels at an axis to gain insight into the origin of the geometric shapes observed in such patterns and how they evolve into the ‘doughnut’ distributions in thicker crystals.

Ultra-fast movies of thin-film laser ablation

Science.gov (United States)

Domke, Matthias; Rapp, Stephan; Schmidt, Michael; Huber, Heinz P.

2012-11-01

Ultra-short-pulse laser irradiation of thin molybdenum films from the glass substrate side initiates an intact Mo disk lift off free from thermal effects. For the investigation of the underlying physical effects, ultra-fast pump-probe microscopy is used to produce stop-motion movies of the single-pulse ablation process, initiated by a 660-fs laser pulse. The ultra-fast dynamics in the femtosecond and picosecond ranges are captured by stroboscopic illumination of the sample with an optically delayed probe pulse of 510-fs duration. The nanosecond and microsecond delay ranges of the probe pulse are covered by an electronically triggered 600-ps laser. Thus, the setup enables an observation of general laser ablation processes from the femtosecond delay range up to the final state. A comparison of time- and space-resolved observations of film and glass substrate side irradiation of a 470-nm molybdenum layer reveals the driving mechanisms of the Mo disk lift off initiated by glass-side irradiation. Observations suggest that a phase explosion generates a liquid-gas mixture in the molybdenum/glass interface about 10 ps after the impact of the pump laser pulse. Then, a shock wave and gas expansion cause the molybdenum layer to bulge, while the enclosed liquid-gas mixture cools and condenses at delay times in the 100-ps range. The bulging continues for approximately 20 ns, when an intact Mo disk shears and lifts off at a velocity of above 70 m/s. As a result, the remaining hole is free from thermal effects.

GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles

Energy Technology Data Exchange (ETDEWEB)

Chernykh, S.V., E-mail: chsv_84@mail.ru [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Chernykh, A.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Didenko, S.I.; Baryshnikov, F.M. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Burtebayev, N. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan); Britvich, G.I. [Institute of High Energy Physics, Protvino, Moscow region (Russian Federation); Chubenko, A.P. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Guly, V.G.; Glybin, Yu.N. [LLC “SNIIP Plus”, Moscow (Russian Federation); Zholdybayev, T.K.; Burtebayeva, J.T.; Nassurlla, M. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan)

2017-02-11

For the first time, samples of particle detectors based on high-purity GaAs epilayers with an active area of 25 and 80 mm{sup 2} and an ultra-thin Pt Schottky barrier were fabricated for use in the spectrometry of charged particles and their operating characteristics were studied. The obtained FWHM of 14.2 (for 25 mm{sup 2} detector) and 15.5 keV (for 80 mm{sup 2} detector) on the 5.499 MeV line of {sup 238}Pu is at the level of silicon spectrometric detectors. It was found that the main component that determines the energy resolution of the detector is a fluctuation in the number of collected electron–hole pairs. This allows us to state that the obtained energy resolution is close to the limit for VPE GaAs. - Highlights: • VPE GaAs particle detectors with an active area of 25 and 80 mm{sup 2} were fabricated. • 120 Å ultra-thin Pt Schottky barrier was used as a rectifying contact. • The obtained FWHM of 14.2 keV ({sup 238}Pu) is at the level of Si spectrometric detectors. • Various components of the total energy resolution were analyzed. • It was shown that obtained energy resolution is close to its limit for VPE GaAs.

High quality antireflective ZnS thin films prepared by chemical bath deposition

International Nuclear Information System (INIS)

Tec-Yam, S.; Rojas, J.; Rejón, V.; Oliva, A.I.

2012-01-01

Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl 2 , NH 4 NO 3 , and CS(NH 2 ) 2 were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 °C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300–800 nm wavelength range, and a reflectance below 25% in the UV–Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: ► High quality ZnS thin films were prepared by chemical bath deposition (CBD). ► Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. ► Reduction in the reflectance was obtained for ZnS films used as buffer layers.

Thermodynamical fluctuations and critical behavior in weakly disordered YBCO thin and ultra-thin films

International Nuclear Information System (INIS)

Lesueur, J.; Aprili, M.; Degoy, S.; Chambonnet, D.; Keller, D.

1996-01-01

The specific role of disorder in the transport properties of YBCO has been investigated, using both light-ion irradiation of thin films to finely tune the amount of atomic disorder, and ultra-thin films grown to study possible dimensional effects. For weak disorder, the samples display a resistive transition typical of the mean-field paraconductive regime of a homogeneous media, well described by the Lawrence and Doniach model for layered superconductors. As the disorder increases, two effects take place. First, the c-axis coherence length becomes shorter, leading to a more anisotropic material, as shown by the excess conductivity above T c . Second, an incipient granularity is revealed, leading to a less sharper transition, which is analyzed within the random 3D XY critical model for the paracoherence transition. Two main results are derived: an experimental test of the Ginzburg criteria for the paracoherence transition, and a new fluctuation regime in nanometric grain size superconductors

Surface Acoustic Wave Monitor for Deposition and Analysis of Ultra-Thin Films

Science.gov (United States)

Hines, Jacqueline H. (Inventor)

2015-01-01

A surface acoustic wave (SAW) based thin film deposition monitor device and system for monitoring the deposition of ultra-thin films and nanomaterials and the analysis thereof is characterized by acoustic wave device embodiments that include differential delay line device designs, and which can optionally have integral reference devices fabricated on the same substrate as the sensing device, or on a separate device in thermal contact with the film monitoring/analysis device, in order to provide inherently temperature compensated measurements. These deposition monitor and analysis devices can include inherent temperature compensation, higher sensitivity to surface interactions than quartz crystal microbalance (QCM) devices, and the ability to operate at extreme temperatures.

Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

Directory of Open Access Journals (Sweden)

Mohamed T. Ghoneim

2015-12-01

Full Text Available In today’s digital world, complementary metal oxide semiconductor (CMOS technology enabled scaling of bulk mono-crystalline silicon (100 based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm mono-crystalline (100 silicon (detached from bulk substrate by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs with high-κ/metal gate stacks.

Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications

Energy Technology Data Exchange (ETDEWEB)

David M. Dean

2012-10-30

Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

Design of a CMOS readout circuit on ultra-thin flexible silicon chip for printed strain gauges

Directory of Open Access Journals (Sweden)

M. Elsobky

2017-09-01

Full Text Available Flexible electronics represents an emerging technology with features enabling several new applications such as wearable electronics and bendable displays. Precise and high-performance sensors readout chips are crucial for high quality flexible electronic products. In this work, the design of a CMOS readout circuit for an array of printed strain gauges is presented. The ultra-thin readout chip and the printed sensors are combined on a thin Benzocyclobutene/Polyimide (BCB/PI substrate to form a Hybrid System-in-Foil (HySiF, which is used as an electronic skin for robotic applications. Each strain gauge utilizes a Wheatstone bridge circuit, where four Aerosol Jet® printed meander-shaped resistors form a full-bridge topology. The readout chip amplifies the output voltage difference (about 5 mV full-scale swing of the strain gauge. One challenge during the sensor interface circuit design is to compensate for the relatively large dc offset (about 30 mV at 1 mA in the bridge output voltage so that the amplified signal span matches the input range of an analog-to-digital converter (ADC. The circuit design uses the 0. 5 µm mixed-signal GATEFORESTTM technology. In order to achieve the mechanical flexibility, the chip fabrication is based on either back thinned wafers or the ChipFilmTM technology, which enables the manufacturing of silicon chips with a thickness of about 20 µm. The implemented readout chip uses a supply of 5 V and includes a 5-bit digital-to-analog converter (DAC, a differential difference amplifier (DDA, and a 10-bit successive approximation register (SAR ADC. The circuit is simulated across process, supply and temperature corners and the simulation results indicate excellent performance in terms of circuit stability and linearity.

CO2 laser cutting of ultra thin (75 μm) glass based rigid optical solar reflector (OSR) for spacecraft application

Science.gov (United States)

Mishra, Shubham; Sridhara, N.; Mitra, Avijit; Yougandar, B.; Dash, Sarat Kumar; Agarwal, Sanjay; Dey, Arjun

2017-03-01

Present study reports for the first time laser cutting of multilayered coatings on both side of ultra thin (i.e., 75 μm) glass substrate based rigid optical solar reflector (OSR) for spacecraft thermal control application. The optimization of cutting parameters was carried out as a function of laser power, cutting speed and number of cutting passes and their effect on cutting edge quality. Systematic and in-detail microstructural characterizations were carried out by optical and scanning electron microscopy techniques to study the laser affected zone and cutting edge quality. Sheet resistance and water contact angle experiments were also conducted locally both prior and after laser cut to investigate the changes of electrical and surface properties, if any.

Consumption of ultra-processed foods predicts diet quality in Canada.

Science.gov (United States)

Moubarac, Jean-Claude; Batal, M; Louzada, M L; Martinez Steele, E; Monteiro, C A

2017-01-01

This study describes food consumption patterns in Canada according to the types of food processing using the Nova classification and investigates the association between consumption of ultra-processed foods and the nutrient profile of the diet. Dietary intakes of 33,694 individuals from the 2004 Canadian Community Health Survey aged 2 years and above were analyzed. Food and drinks were classified using Nova into unprocessed or minimally processed foods, processed culinary ingredients, processed foods and ultra-processed foods. Average consumption (total daily energy intake) and relative consumption (% of total energy intake) provided by each of the food groups were calculated. Consumption of ultra-processed foods according to sex, age, education, residential location and relative family revenue was assessed. Mean nutrient content of ultra-processed foods and non-ultra-processed foods were compared, and the average nutrient content of the overall diet across quintiles of dietary share of ultra-processed foods was measured. In 2004, 48% of calories consumed by Canadians came from ultra-processed foods. Consumption of such foods was high amongst all socioeconomic groups, and particularly in children and adolescents. As a group, ultra-processed foods were grossly nutritionally inferior to non-ultra-processed foods. After adjusting for covariates, a significant and positive relationship was found between the dietary share of ultra-processed foods and the content in carbohydrates, free sugars, total and saturated fats and energy density, while an inverse relationship was observed with the dietary content in protein, fiber, vitamins A, C, D, B6 and B12, niacin, thiamine, riboflavin, as well as zinc, iron, magnesium, calcium, phosphorus and potassium. Lowering the dietary share of ultra-processed foods and raising consumption of hand-made meals from unprocessed or minimally processed foods would substantially improve the diet quality of Canadian. Copyright © 2016

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO{sub 2}/Si interfaces with low defect densities

Energy Technology Data Exchange (ETDEWEB)

Stegemann, Bert, E-mail: bert.stegemann@htw-berlin.de [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Gad, Karim M. [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Balamou, Patrice [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Sixtensson, Daniel [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Vössing, Daniel; Kasemann, Martin [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Angermann, Heike [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany)

2017-02-15

Highlights: • Fabrication of ultrathin SiO{sub 2} tunnel layers on c-Si. • Correlation of electronic and chemical SiO{sub 2}/Si interface properties revealed by XPS/SPV. • Chemically abrupt SiO{sub 2}/Si interfaces generate less interface defect states considerable. - Abstract: Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO{sub 2}/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO{sub 2}/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO{sub 2}/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO{sub 2}/Si interfaces have been shown to generate less interface defect states.

Optical and electrical properties of SnO2 thin films after ultra-short pulsed laser annealing

OpenAIRE

Scorticati, D.; Illiberi, A.; Römer, G.R.B.E.; Bor, T.; Ogieglo, W.; Klein Gunnewiek, M.; Lenferink, A.; Otto, C.; Skolski, J.Z.P.; Grob, F.; Lange, D.F. de; Huis in 't Veld, A.J.

2013-01-01

Ultra-short pulsed laser sources, with pulse durations in the ps and fs regime, are commonly exploited for cold ablation. However, operating ultra-short pulsed laser sources at fluence levels well below the ablation threshold allows for fast and selective thermal processing. The latter is especially advantageous for the processing of thin films. A precise control of the heat affected zone, as small as tens of nanometers, depending on the material and laser conditions, can be achieved. It enab...

Development and implementation of ultra-thin concrete road technology for suburban streets in South Africa

CSIR Research Space (South Africa)

Louw, MR

2011-01-01

Full Text Available Louw, FC Rust, AO Bergh and AH McKay DEVELOPMENT AND IMPLEMENTATIONN OF ULTRA- THIN CONCRETE ROAD TECHNOLOGY FOR SUBURBAN STREETS IN SOUTH AFRICA MR Louw, FC Rust, AO Bergh and AH McKay CSIR, Republic of South Africa rlouw...

Performance regeneration of InGaZnO transistors with ultra-thin channels

Energy Technology Data Exchange (ETDEWEB)

Zhang, Binglei; Li, He; Zhang, Xijian, E-mail: zhangxijian@sdu.edu.cn, E-mail: songam@sdu.edu.cn; Luo, Yi; Wang, Qingpu [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: zhangxijian@sdu.edu.cn, E-mail: songam@sdu.edu.cn [School of Physics, Shandong University, Jinan 250100 (China); School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

2015-03-02

Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period.

Identification of Ginkgo biloba supplements adulteration using high performance thin layer chromatography and ultra high performance liquid chromatography-diode array detector-quadrupole time of flight-mass spectrometry.

Science.gov (United States)

Avula, Bharathi; Sagi, Satyanarayanaraju; Gafner, Stefan; Upton, Roy; Wang, Yan-Hong; Wang, Mei; Khan, Ikhlas A

2015-10-01

Ginkgo biloba is one of the most widely sold herbal supplements and medicines in the world. Its popularity stems from having a positive effect on memory and the circulatory system in clinical studies. As ginkgo popularity increased, non-proprietary extracts were introduced claiming to have a similar phytochemical profile as the clinically tested extracts. The standardized commercial extracts of G. biloba leaf used in ginkgo supplements contain not less than 6% sesquiterpene lactones and 24% flavonol glycosides. While sesquiterpene lactones are unique constituents of ginkgo leaf, the flavonol glycosides are found in many other botanical extracts. Being a high value botanical, low quality ginkgo extracts may be subjected to adulteration with flavonoids to meet the requirement of 24% flavonol glycosides. Chemical analysis by ultra high performance liquid chromatography-mass spectrometry revealed that adulteration of ginkgo leaf extracts in many of these products is common, the naturally flavonol glycoside-rich extract being spiked with pure flavonoids or extracts made from another flavonoid-rich material, such as the fruit/flower of Japanese sophora (Styphnolobium japonicum), which also contains the isoflavone genistein. Recently, genistein has been proposed as an analytical marker for the detection of adulteration of ginkgo extracts with S. japonicum. This study confirms that botanically authenticated G. biloba leaf and extracts made therefrom do not contain genistein, and the presence of which even in trace amounts is suggestive of adulteration. In addition to the mass spectrometric approach, a high performance thin layer chromatography method was developed as a fast and economic method for chemical fingerprint analysis of ginkgo samples.

Anomalous aging and strain induced time dependent phenomena in ultra-thin La0.65Ca0.35MnO3 films

International Nuclear Information System (INIS)

Egilmez, M.; Saber, M.M.; Abdelhadi, M.; Chow, K.H.; Jung, J.

2011-01-01

We have shown that ultra-thin La 0.65 Ca 0.35 MnO 3 films exhibit strong metastable behavior. The resistance can vary with time significantly, suggesting that a state of dynamic phase separation exists whereby one phase grows at the expense of another. Physical properties associated with the metastable behavior have been investigated on the films grown on different substrates. We have found that ultra-thin films age much faster than the thicker counterparts and more interestingly the metastability in the resistance of these films enhanced when aged. -- Highlights: → Ultra-thin La 0.67 Ca 0.33 MnO 3 films exhibit metastable behavior. → Physical properties associated with metastable behavior have been investigated. → The metastability in resistance of the films enhanced when films are aged. → Relaxation rates were used as a relative measure the metastability. → The metastable behavior is sensitive to the strain state of the film.

On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films

NARCIS (Netherlands)

Van Hao, B.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2013-01-01

This work reports on the determination and comparison of the resistivity of ultra-thin atomic layer deposited titanium nitride films in the thickness range 0.65–20 nm using spectroscopic ellipsometry and electrical test structures. We found that for films thicker than 4 nm, the resistivity values

Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

Energy Technology Data Exchange (ETDEWEB)

Kim, Juho; Song, Kwangsun; Kim, Namyun; Lee, Jongho, E-mail: jong@gist.ac.kr [School of Mechanical Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Hwang, Jeongwoo [Photonic Bio Research Center, Korea Photonics Technology Institute (KOPTI), 9 Cheomdanventure-ro 108beon-gil, Gwangju 61007 (Korea, Republic of); Shin, Jae Cheol [Department of Physics, Yeungnam University, Gyeongsan, Gyeongbuk 38541 (Korea, Republic of)

2016-06-20

Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric power similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.

Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

Science.gov (United States)

Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

2017-11-01

The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

Mechanical properties of ultra thin metallic films revealed by synchrotron techniques

Energy Technology Data Exchange (ETDEWEB)

Gruber, Patric Alfons

2007-07-20

A prerequisite for the study of the scaling behavior of mechanical properties of ultra thin films is a suitable testing technique. Therefore synchrotron-based in situ testing techniques were developed and optimized in order to characterize the stress evolution in ultra thin metallic films on compliant polymer substrates during isothermal tensile tests. Experimental procedures for polycrystalline as well as single crystalline films were established. These techniques were used to systematically investigate the influence of microstructure, film thickness (20 to 1000 nm) and temperature (-150 to 200 C) on the mechanical properties. Passivated and unpassivated Au and Cu films as well as single crystalline Au films on polyimide substrates were tested. Special care was also dedicated to the microstructural characterization of the samples which was very important for the correct interpretation of the results of the mechanical tests. Down to a film thickness of about 100 to 200 nm the yield strength increased for all film systems (passivated and unpassivated) and microstructures (polycrystalline and singlecrystalline). The influence of different interfaces was smaller than expected. This could be explained by a dislocation source model based on the nucleation of perfect dislocations. For polycrystalline films the film thickness as well as the grain size distribution had to be considered. For smaller film thicknesses the increase in flow stress was weaker and the deformation behavior changed because the nucleation of perfect dislocations became unfavorable. Instead, the film materials used alternative mechanisms to relieve the high stresses. For regular and homogeneous deformation the total strain was accommodated by the nucleation and motion of partial dislocations. If the deformation was localized due to initial cracks in a brittle interlayer or local delamination, dislocation plasticity was not effective enough to relieve the stress concentration and the films showed

Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

International Nuclear Information System (INIS)

Nakahara, Yoshio; Kawa, Haruna; Yoshiki, Jun; Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio; Yamakado, Hideo; Fukuda, Hisashi; Kimura, Keiichi

2012-01-01

Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol–gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 °C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol–gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: ► Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. ► The ultra-thin PSQ film could be cured at low temperatures of less than 120 °C. ► The PSQ film showed the almost perfect solubilization resistance to organic solvent. ► The surface of the PSQ film was very smooth at a nano-meter level. ► Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

International Nuclear Information System (INIS)

Lotkhov, Sergey V

2013-01-01

In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage–current characteristics were measured at temperatures down to T ∼ 20 mK for films with sheet resistivities as high as ∼7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current. (paper)

Role of interlayer coupling in ultra thin MoS2

KAUST Repository

Cheng, Yingchun

2012-01-01

The effects of interlayer coupling on the vibrational and electronic properties of ultra thin MoS 2 were studied by ab initio calculations. For smaller slab thickness, the interlayer distance is significantly elongated because of reduced interlayer coupling. This explains the anomalous thickness dependence of the lattice vibrations observed by Lee et al. (ACS Nano, 2010, 4, 2695). The absence of interlayer coupling in mono-layer MoS 2 induces a transition from direct to indirect band gap behaviour. Our results demonstrate a strong interplay between the intralayer chemical bonding and the interlayer van-der-Waals interaction. This journal is © 2012 The Royal Society of Chemistry.

Ultra-low noise supercontinuum source for ultra-high resolution optical coherence tomography at 1300 nm

Science.gov (United States)

Gonzalo, I. B.; Maria, M.; Engelsholm, R. D.; Feuchter, T.; Leick, L.; Moselund, P. M.; Podoleanu, A.; Bang, O.

2018-02-01

Supercontinuum (SC) sources are of great interest for many applications due to their ultra-broad optical bandwidth, good beam quality and high power spectral density [1]. In particular, the high average power over large bandwidths makes SC light sources excellent candidates for ultra-high resolution optical coherence tomography (UHR-OCT) [2-5]. However, conventional SC sources suffer from high pulse-to-pulse intensity fluctuations as a result of the noise-sensitive nonlinear effects involved in the SC generation process [6-9]. This intensity noise from the SC source can limit the performance of OCT, resulting in a reduced signal-to-noise ratio (SNR) [10-12]. Much work has been done to reduce the noise of the SC sources for instance with fiber tapers [7,8] or increasing the repetition rate of the pump laser for averaging in the spectrometer [10,12]. An alternative approach is to use all-normal dispersion (ANDi) fibers [13,14] to generate SC light from well-known coherent nonlinear processes [15-17]. In fact, reduction of SC noise using ANDi fibers compared to anomalous dispersion SC pumped by sub-picosecond pulses has been recently demonstrated [18], but a cladding mode was used to stabilize the ANDi SC. In this work, we characterize the noise performance of a femtosecond pumped ANDi based SC and a commercial SC source in an UHR-OCT system at 1300 nm. We show that the ANDi based SC presents exceptional noise properties compared to a commercial source. An improvement of 5 dB in SNR is measured in the UHR-OCT system, and the noise behavior resembles that of a superluminiscent diode. This preliminary study is a step forward towards development of an ultra-low noise SC source at 1300 nm for ultra-high resolution OCT.

Ultrasonic force microscopy: detection and imaging of ultra-thin molecular domains.

Science.gov (United States)

Dinelli, Franco; Albonetti, Cristiano; Kolosov, Oleg V

2011-03-01

The analysis of the formation of ultra-thin organic films is a very important issue. In fact, it is known that the properties of organic light emitting diodes and field effect transistors are strongly affected by the early growth stages. For instance, in the case of sexithiophene, the presence of domains made of molecules with the backbone parallel to the substrate surface has been indirectly evidenced by photoluminescence spectroscopy and confocal microscopy. On the contrary, conventional scanning force microscopy both in contact and intermittent contact modes have failed to detect such domains. In this paper, we show that Ultrasonic Force Microscopy (UFM), sensitive to nanomechanical properties, allows one to directly identify the structure of sub-monolayer thick films. Sexithiophene flat domains have been imaged for the first time with nanometer scale spatial resolution. A comparison with lateral force and intermittent contact modes has been carried out in order to explain the origins of the UFM contrast and its advantages. In particular, it indicates that UFM is highly suitable for investigations where high sensitivity to material properties, low specimen damage and high spatial resolution are required. Copyright © 2010 Elsevier B.V. All rights reserved.

Comment on 'extrinsic versus intrinsic ferroelectric switching : experimental investigations using ultra-thin PVDF Langmuir-Blodgett films'

NARCIS (Netherlands)

Naber, R.C.G.; Blom, P.W.M.; de Leeuw, DM

2006-01-01

Previous work on ultra-thin P(VDF-TrFE) Langmuir-Blodgett films has indicated a transition from extrinsic to intrinsic ferroelectric switching. The lack of several key features of intrinsic switching in the experimental work reported by Kliem et al argues against intrinsic switching. In this Comment

Ultra high energy gamma-ray astronomy

International Nuclear Information System (INIS)

Wdowczyk, J.

1986-01-01

The experimental data on ultra high energy γ-rays are reviewed and a comparison of the properties of photon and proton initiated shower is made. The consequences of the existence of the strong ultra high energy γ-ray sources for other observations is analysed and possible mechanisms for the production of ultra high energy γ-rays in the sources are discussed. It is demonstrated that if the γ-rays are produced via cosmic ray interactions the sources have to produce very high fluxes of cosmic ray particles. In fact it is possible that a small number of such sources can supply the whole Galactic cosmic ray flux

Effect of injection parameters on mechanical and physical properties of super ultra-thin wall propylene packaging by Taguchi method

Science.gov (United States)

Ginghtong, Thatchanok; Nakpathomkun, Natthapon; Pechyen, Chiravoot

2018-06-01

The parameters of the plastic injection molding process have been investigated for the manufacture of a 64 oz. ultra-thin polypropylene bucket. The 3 main parameters, such as injection speed, melting temperature, holding pressure, were investigated to study their effect on the physical appearance and compressive strength. The orthogonal array of Taguchi's L9 (33) was used to carry out the experimental plan. The physical properties were measured and the compressive strength was determined using linear regression analysis. The differential scanning calorimeter (DSC) was used to analyze the crystalline structure of the product. The optimization results show that the proposed approach can help engineers identify optimal process parameters and achieve competitive advantages of energy consumption and product quality. In addition, the injection molding of the product includes 24 mm of shot stroke, 1.47 mm position transfer, 268 rpm screw speed, injection speed 100 mm/s, 172 ton clamping force, 800 kgf holding pressure, 0.9 s holding time and 1.4 s cooling time, make the products in the shape and proportion of the product satisfactory. The parameters of influence are injection speed 71.07%, melting temperature 23.31% and holding pressure 5.62%, respectively. The compressive strength of the product was able to withstand a pressure of up to 839 N before the product became plastic. The low melting temperature was caused by the superior crystalline structure of the super-ultra-thin wall product which leads to a lower compressive strength.

Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

Science.gov (United States)

Kim, Jong Cheol; Kim, Jongsik; Xin, Yan; Lee, Jinhyung; Kim, Young-Gyun; Subhash, Ghatu; Singh, Rajiv K.; Arjunan, Arul C.; Lee, Haigun

2018-05-01

The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is because of the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (˜3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Notably, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The method invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.

Fatigue-resistant epitaxial Pb(Zr,Ti)O3 capacitors on Pt electrode with ultra-thin SrTiO3 template layers

International Nuclear Information System (INIS)

Takahara, Seiichi; Morimoto, Akiharu; Kawae, Takeshi; Kumeda, Minoru; Yamada, Satoru; Ohtsubo, Shigeru; Yonezawa, Yasuto

2008-01-01

Lead zirconate-titanate Pb(Zr,Ti)O 3 (PZT) capacitors with Pt bottom electrodes were prepared on MgO substrates by pulsed laser deposition (PLD) technique employing SrTiO 3 (STO) template layer. Perovskite PZT thin films are prepared via stoichiometric target using the ultra-thin STO template layers while it is quite difficult to obtain the perovskite PZT on Pt electrode via stoichiometric target in PLD process. The PZT capacitor prepared with the STO template layer showed good hysteresis and leakage current characteristics, and it showed an excellent fatigue resistance. The ultra-thin STO template layers were characterized by angle-resolved X-ray photoelectron spectroscopy measurement. The effect of the STO template layer is discussed based on the viewpoint of the perovskite nucleation and diffusion of Pb and O atoms

Growth and hydrogenation of ultra-thin Mg films on Mo(111)

DEFF Research Database (Denmark)

Ostenfeld, Christopher Worsøe; Davies, Jonathan Conrad; Vegge, Tejs

2005-01-01

. Hydrogen cannot be adsorbed on magnesium films under UHV conditions. However, when evaporating Mg in a hydrogen background, a hydrogen overlayer is seen to adsorb at the Mg surface, due to the catalytic interaction with the Mo(1 1 1) substrate and subsequent spill-over. We show that two monolayers of Mg......The growth and hydrogenation of ultra-thin magnesium overlayers have been investigated on a Mo(1 1 1) single crystal substrate. For increasing magnesium coverages we observe intermediate stages in the TPD and LEISS profiles, which illustrate the transition from one monolayer to multilayer growth...

An investigation of laser cutting quality of 22MnB5 ultra high strength steel using response surface methodology

Science.gov (United States)

Tahir, Abdul Fattah Mohd; Aqida, Syarifah Nur

2017-07-01

In hot press forming, changes of mechanical properties in boron steel blanks have been a setback in trimming the final shape components. This paper presents investigation of kerf width and heat affected zone (HAZ) of ultra high strength 22MnB5 steel cutting. Sample cutting was conducted using a 4 kW Carbon Dioxide (CO2) laser machine with 10.6 μm wavelength with the laser spot size of 0.2 mm. A response surface methodology (RSM) using three level Box-Behnken design of experiment was developed with three factors of peak power, cutting speed and duty cycle. The parameters were optimised for minimum kerf width and HAZ formation. Optical evaluation using MITUTOYO TM 505 were conducted to measure the kerf width and HAZ region. From the findings, laser duty cycle was crucial to determine cutting quality of ultra-high strength steel; followed by cutting speed and laser power. Meanwhile, low power intensity with continuous wave contributes the narrowest kerf width formation and least HAZ region.

Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Nakahara, Yoshio; Kawa, Haruna [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Yoshiki, Jun [Division of Information and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio [Konishi Chemical IND. Co., LTD., 3-4-77 Kozaika, Wakayama 641-0007 (Japan); Yamakado, Hideo [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Fukuda, Hisashi [Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kimura, Keiichi, E-mail: kkimura@center.wakayama-u.ac.jp [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan)

2012-10-01

Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol-gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 Degree-Sign C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol-gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: Black-Right-Pointing-Pointer Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. Black-Right-Pointing-Pointer The ultra-thin PSQ film could be cured at low temperatures of less than 120 Degree-Sign C. Black-Right-Pointing-Pointer The PSQ film showed the almost perfect solubilization resistance to organic solvent. Black-Right-Pointing-Pointer The surface of the PSQ film was very smooth at a nano-meter level. Black-Right-Pointing-Pointer Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

Highly stable thin film transistors using multilayer channel structure

KAUST Repository

Nayak, Pradipta K.

2015-03-09

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

Probing the surface swelling in ultra-thin supported polystyrene films during case II diffusion of n-hexane

NARCIS (Netherlands)

Ogieglo, Wojciech; Wormeester, Herbert; Wessling, Matthias; Benes, Nieck Edwin

2013-01-01

In situ time-resolved spectroscopic ellipsometry is used to study the dynamics of n-hexane diffusion into, and the corresponding induced swelling of, ultra-thin polystyrene films. The experimental conditions are carefully selected to facilitate the observation of anomalous Case II diffusion in the

Do ultra-orphan medicinal products warrant ultra-high prices? A review

Directory of Open Access Journals (Sweden)

Picavet E

2013-06-01

Full Text Available Eline Picavet,1 David Cassiman,2 Steven Simoens1 1Department of Pharmaceutical and Pharmacological Sciences, KU Leuven, Leuven, Belgium; 2Department of Hepatology, University Hospital Leuven, Leuven, Belgium Abstract: Ultra-orphan medicinal products (ultra-OMPs are intended for the treatment, prevention, or diagnosis of ultra-rare diseases, ie, life-threatening or chronically debilitating diseases that affect less than one per 50,000 individuals. Recently, high prices for ultra-OMPs have given rise to debate on the sustainability and justification of these prices. The aim of this article is to review the international scientific literature on the pricing of ultra-OMPs and to provide an overview of the current knowledge on the drivers of ultra-OMP pricing. The pricing process of ultra-OMPs is a complex and nontransparent issue. Evidence in the literature seems to indicate that ultra-OMPs are priced according to rarity and what the manufacturer believes the market will bear. Additionally, there appears to be a trend between the price of an ultra-OMP and the number of available alternatives. Patients, third-party payers, and pharmaceutical companies could benefit from more transparent pricing strategies. With a view to containing health care costs, it is likely that cost-sharing strategies, such as performance-based risk sharing arrangements, will become increasingly more important. However, it is vital that any measures for price control are consistent with the intended goals of the incentives to promote the development of new OMPs. Ideally, a balance must be struck between attaining affordable prices for ultra-OMPs and securing a realistic return on investment for the pharmaceutical industry. Keywords: ultra-orphan medicinal product, ultra-rare disease, pricing

Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

Science.gov (United States)

Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

2010-09-01

We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

Ultra-thin Glass Film Coated with Graphene: A New Material for Spontaneous Emission Enhancement of Quantum Emitter

Institute of Scientific and Technical Information of China (English)

Lu Sun; Chun Jiang

2015-01-01

We propose an ultra-thin glass film coated with graphene as a new kind of surrounding material which can greatly enhance spontaneous emission rate(SER) of dipole emitter embedded in it. With properly designed parameters,numerical results show that SER-enhanced factors as high as 1.286 9 106 can be achieved. The influences of glass film thickness and chemical potential/doping level of graphene on spontaneous emission enhancement are also studied in this paper. A comparison is made between graphene and other coating materials such as gold and silver to see their performances in SER enhancement.

Electroluminescence of organic light-emitting diodes with an ultra-thin layer of dopant

Energy Technology Data Exchange (ETDEWEB)

Li Weizhi [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu Junsheng [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jsyu@uestc.edu.cn; Wang, Tao [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Jiang, Yadong [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jiangyd@uestc.edu.cn; Wei, Bangxiong [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2008-03-15

Conventional fluorescent dyes, i.e., 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), 5,12-dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA) and 5,6,11,12-tetraphenylnaphthacene (Rubrene), were used to investigate the performance of organic light-emitting diodes (OLEDs) based on indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/tris-(8-hydroxyquinolate)-aluminum (Alq{sub 3})/MgAg. The dyes were either inserted into devices as an ultra-thin film at the NPB/Alq{sub 3} interface by sequential evaporation, or doped into the Alq{sub 3} emission layer by co-evaporation with the doping ratio about 2%. Electroluminescence (EL) spectra of devices indicated that concentration quenching effect (CQE) of the dye-dopant was slightly bigger in the former than in the latter, while the degrees of CQE for three dopants are in the order of DMQA > DCJTB > Rubrene suggested by the difference in EL spectra and performances of devices. In addition, EL process of device with an ultra-thin layer of dopant is dominated by direct carrier trapping (DCT) process due to almost no holes recombine with electrons in Alq{sub 3}-host layer.

Development of an ultra-portable ride quality meter.

Science.gov (United States)

2012-12-01

FRAs Office of Research and Development has funded the development of an ultra-portable ride quality meter (UPRQM) under the Small Business and Innovative Research (SBIR) program. Track inspectors can use the UPRQM to locate segments of track that...

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

Science.gov (United States)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

Energy Technology Data Exchange (ETDEWEB)

Matsui, S., E-mail: smatsui@gpi.ac.jp; Mori, Y. [The Graduate School for the Creation of New Photonics Industries, 1955-1 Kurematsucho, Nishiku, Hamamatsu, Shizuoka 431-1202 (Japan); Nonaka, T.; Hattori, T.; Kasamatsu, Y.; Haraguchi, D.; Watanabe, Y.; Uchiyama, K.; Ishikawa, M. [Hamamatsu Photonics K.K. Electron Tube Division, 314-5 Shimokanzo, Iwata, Shizuoka 438-0193 (Japan)

2016-05-15

For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

Ultra-thin MoS2 coated Ag@Si nanosphere arrays as efficient and stable photocathode for solar-driven hydrogen production.

Science.gov (United States)

Zhou, Qingwei; Su, Shaoqiang; Hu, Die; Lin, Lin; Yan, Zhibo; Gao, Xingsen; Zhang, Zhang; Liu, Junming

2018-01-02

Solar-driven photoelectrochemical (PEC) water splitting has recently attracted much attention. Silicon (Si) is an ideal light absorber for solar energy conversion. However, the poor stability and inefficient surface catalysis of Si photocathode for hydrogen evolution reaction (HER) have been remained as the key challenges. Alternatively, MoS2 has been reported to exhibit the excellent catalysis performance if sufficient active sites for the HER are available. Here, ultra-thin MoS2 nanoflakes are directly synthesized to coat on the arrays of Ag-core Si-shell nanospheres (Ag@Si NSs) using the chemical vapor deposition (CVD). Due to the high surface area ratio and large curvature of these NSs, the as-grown MoS2 nanoflakes can accommodate more active sites. Meanwhile, the high-quality coating of MoS2 nanoflakes on the Ag@Si NSs protects the photocathode from damage during the PEC reaction. A high efficiency with a photocurrent of 33.3 mA cm-2 at a voltage of -0.4 V vs. the reversible hydrogen electrode is obtained. The as-prepared nanostructure as hydrogen photocathode is evidenced to have high stability over 12 hour PEC performance. This work opens opportunities for composite photocathode with high activity and stability using cheap and stable co-catalysts. © 2017 IOP Publishing Ltd.

Preparation of c-axis perpendicularly oriented ultra-thin L10-FePt films on MgO and VN underlayers

Science.gov (United States)

Futamoto, Masaaki; Shimizu, Tomoki; Ohtake, Mitsuru

2018-05-01

Ultra-thin L10-FePt films of 2 nm average thickness are prepared on (001) oriented MgO and VN underlayers epitaxially grown on base substrate of SrTiO3(001) single crystal. Detailed cross-sectional structures are observed by high-resolution transmission electron microscopy. Continuous L10-FePt(001) thin films with very flat surface are prepared on VN(001) underlayer whereas the films prepared on MgO(001) underlayer consist of isolated L10-FePt(001) crystal islands. Presence of misfit dislocation and lattice bending in L10-FePt material is reducing the effective lattice mismatch with respect to the underlayer to be less than 0.5 %. Formation of very flat and continuous FePt layer on VN underlayer is due to the large surface energy of VN material where de-wetting of FePt material at high temperature annealing process is suppressed under a force balance between the surface and interface energies of FePt and VN materials. An employment of underlayer or substrate material with the lattice constant and the surface energy larger than those of L10-FePt is important for the preparation of very thin FePt epitaxial thin continuous film with the c-axis controlled to be perpendicular to the substrate surface.

Sensitive thermal transitions of nanoscale polymer samples using the bimetallic effect: application to ultra-thin polythiophene.

Science.gov (United States)

Ahumada, O; Pérez-Madrigal, M M; Ramirez, J; Curcó, D; Esteves, C; Salvador-Matar, A; Luongo, G; Armelin, E; Puiggalí, J; Alemán, C

2013-05-01

A sensitive nanocalorimetric technology based on microcantilever sensors is presented. The technology, which combines very short response times with very small sample consumption, uses the bimetallic effect to detect thermal transitions. Specifically, abrupt variations in the Young's modulus and the thermal expansion coefficient produced by temperature changes have been employed to detect thermodynamic transitions. The technology has been used to determine the glass transition of poly(3-thiophene methyl acetate), a soluble semiconducting polymer with different nanotechnological applications. The glass transition temperature determined using microcantilevers coated with ultra-thin films of mass = 10(-13) g is 5.2 °C higher than that obtained using a conventional differential scanning calorimeter for bulk powder samples of mass = 5 × 10(-3) g. Atomistic molecular dynamics simulations on models that represent the bulk powder and the ultra-thin films have been carried out to provide understanding and rationalization of this feature. Simulations indicate that the film-air interface plays a crucial role in films with very small thickness, affecting both the organization of the molecular chains and the response of the molecules against the temperature.

Dependence of the organic nonvolatile memory performance on the location of ultra-thin Ag film

International Nuclear Information System (INIS)

Jiao Bo; Wu Zhaoxin; He Qiang; Mao Guilin; Hou Xun; Tian Yuan

2010-01-01

We demonstrated organic nonvolatile memory devices based on 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino] triphenylamine (m-MTDATA) inserted by an ultra-thin Ag film. The memory devices with different locations of ultra-thin Ag film in m-MTDATA were investigated, and it was found that the location of the Ag film could affect the performance of the organic memory, such as ON/OFF ratio, retention time and cycling endurance. When the Ag film was located at the ITO/m-MTDATA interface, the largest ON/OFF ratio (about 10 5 ) could be achieved, but the cycling endurance was poor. When the Ag film was located in the middle region of the m-MTDATA layer, the ON/OFF ratios came down by about 10 3 , but better performance of cycling endurance was exhibited. When the Ag film was located close to the Al electrode, the ON/OFF ratios and the retention time of this device decreased sharply and the bistable phenomenon almost disappeared. Our works show a simple approach to improve the performance of organic memory by adjusting the location of the metal film.

Simulation of press-forming for automobile part using ultra high tension steel

Directory of Open Access Journals (Sweden)

Tanabe I.

2012-08-01

Full Text Available In recent years, ultra high tension steel has gradually been used in the automobile industry. The development of press-forming technology is now essential by reason of its high productivity and high product quality. In this study, tensile tests were performed with a view to understanding the material properties. Press-forming tests were then carried out with regard to the behaviors of spring back and deep-drawability, and manufacturing a real product. The ultra high tension steel used in the experiments had a thickness of 1 mm and a tensile strength of 1000 MPa. Finally, simulations of spring back, deep-drawability and manufacturing a real product in ultra high tension steel were conducted and evaluated in order to calculate the optimum-press-forming conditions and the optimum shape of the die. FEM with non-linear and dynamic analysis using Euler-Lagrange’s element was used for the simulations. It is concluded from the results that (1 the simulations conformed to the results of the experiments (2 the simulations proved very effective for calculating the optimum press conditions and die shape.

Magnetic structures in ultra-thin Holmium films: Influence of external magnetic field

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, L.J. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59600-900, RN (Brazil); Departamento de Física, Universidade do Estado do Rio Grande do Norte, Mossoró 59625-620, RN (Brazil); Mello, V.D. [Departamento de Física, Universidade do Estado do Rio Grande do Norte, Mossoró 59625-620, RN (Brazil); Anselmo, D.H.A.L. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59600-900, RN (Brazil); Vasconcelos, M.S., E-mail: mvasconcelos@ect.ufrn.br [Escola de Ciência e Tecnologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal, RN (Brazil)

2015-03-01

We address the magnetic phases in very thin Ho films at the temperature interval between 20 K and 132 K. We show that slab size, surface effects and magnetic field due to spin ordering impact significantly the magnetic phase diagram. Also we report that there is a relevant reduction of the external field strength required to saturate the magnetization and for ultra-thin films the helical state does not form. We explore the specific heat and the susceptibility as auxiliary tools to discuss the nature of the phase transitions, when in the presence of an external magnetic field and temperature effects. The presence of an external field gives rise to the magnetic phase Fan and the spin-slip structures. - Highlights: • We analyze the magnetic phases of very thin Ho films in the temperature interval 20–132 K. • We show that slab size, etc. due to spin ordering may impact the magnetic phase diagram. • All magnetic phase transitions, for strong magnetic fields, are marked by the specific heat. • The presence of an external field gives rise to the magnetic phase Fan and the spin-slip one.

Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses

International Nuclear Information System (INIS)

Shi-Gang, Hu; Yan-Rong, Cao; Yue, Hao; Xiao-Hua, Ma; Chi, Chen; Xiao-Feng, Wu; Qing-Jun, Zhou

2008-01-01

Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT) stresses are studied using NMOSFET with 1.4-nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Intrinsic radiation tolerance of ultra-thin GaAs solar cells

Energy Technology Data Exchange (ETDEWEB)

Hirst, L. C.; Yakes, M. K.; Warner, J. H.; Schmieder, K. J.; Walters, R. J.; Jenkins, P. P. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW., Washington, D.C. 20375 (United States); Bennett, M. F. [Sotera Defense Solutions, Inc., Annapolis Junction, Maryland 20701-1067 (United States)

2016-07-18

Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor of 0.26.

Ultra smooth NiO thin films on flexible plastic (PET) substrate at room temperature by RF magnetron sputtering and effect of oxygen partial pressure on their properties

International Nuclear Information System (INIS)

Nandy, S.; Goswami, S.; Chattopadhyay, K.K.

2010-01-01

Transparent p-type nickel oxide thin films were grown on polyethylene terephthalate (PET) and glass substrates by RF magnetron sputtering technique in argon + oxygen atmosphere with different oxygen partial pressures at room temperature. The morphology of the NiO thin films grown on PET and glass substrates was studied by atomic force microscope. The rms surface roughnesses of the films were in the range 0.63-0.65 nm. These ultra smooth nanocrystalline NiO thin films are useful for many applications. High resolution transmission electron microscopic studies revealed that the grains of NiO films on the highly flexible PET substrate were purely crystalline and spherical in shape with diameters 8-10 nm. XRD analysis also supported these results. NiO films grown on the PET substrates were found to have better crystalline quality with fewer defects than those on the glass substrates. The sheet resistances of the NiO films deposited on PET and glass substrates were not much different; having values 5.1 and 5.3 kΩ/□ and decreased to 3.05, 3.1 kΩ/□ respectively with increasing oxygen partial pressure. The thicknesses of the films on both substrates were ∼700 nm. It was also noted that further increase in oxygen partial pressure caused increase in resistivity due to formation of defects in NiO.

Low cost and thin metasurface for ultra wide band and wide angle polarization insensitive radar cross section reduction

Science.gov (United States)

Ameri, Edris; Esmaeli, Seyed Hassan; Sedighy, Seyed Hassan

2018-05-01

A planar low cost and thin metasurface is proposed to achieve ultra-wideband radar cross section (RCS) reduction with stable performance with respect to polarization and incident angles. This metasurface is composed of two different artificial magnetic conductor unit cells arranged in a chessboard like configuration. These unit cells have a Jerusalem cross pattern with different thicknesses, which results in wideband out-phase reflection and RCS reduction, consequently. The designed metasurface reduces RCS more than 10-dB from 13.6 GHz to 45.5 GHz (108% bandwidth) and more than 20-dB RCS from 15.2 GHz to 43.6 GHz (96.6%). Moreover, the 10-dB RCS reduction bandwidth is very stable (more than 107%) for both TE and TM polarizations. The good agreement between simulations and measurement results proves the design, properly. The ultra-wide bandwidth, low cost, low profile, and stable performance of this metasurface prove its high capability compared with the state-of-the-art references.

A compact Ultra-High Vacuum (UHV) compatible instrument for time of flight-energy measurements of slow heavy reaction products

Energy Technology Data Exchange (ETDEWEB)

Kuznetsov, A.V.; Veldhuizen, E.J. van; Westerberg, L.; Lyapin, V.G.; Aleklett, K.; Loveland, W.; Bondorf, J.; Jakobsson, B.; Whitlow, H.J.; El Bouanani, M

2000-10-01

A compact Ultra-High Vacuum (UHV) compatible instrument for time of flight-energy measurements of slow heavy reaction products from nuclear reactions has been designed and tested at the CELSIUS storage ring in Uppsala. The construction is based on MicroChannel Plate (MCP) time detectors of the electron mirror type and silicon p-i-n diodes, and permits the detectors to be stacked side-by-side to achieve large solid angle coverage. This kind of telescope measures the Time of Flight (ToF) and Energy (E) of the particle from which one can reconstruct mass. The combination of an ultra-thin cluster gas-jet target and thin carbon emitter foils allows one to measure heavy residues down to an energy of {approx}35 keV/nucleon from the interactions of 400 MeV/nucleon {sup 16}O with {sup nat}Xe gas targets.

A compact Ultra High Vacuum (UHV) compatible instrument for time of flight energy measurements of slow heavy reaction products

International Nuclear Information System (INIS)

Kuznetsov, A.V.; Loveland, W.; Jakobsson, B.; Whitlow, H.J.; Bouanani, M. El; Univ. of North Texas, Denton, TX

2000-01-01

A compact Ultra High Vacuum (UHV) compatible instrument for time of flight energy measurements of slow heavy reaction products from nuclear reactions has been designed and tested at the CELSIUS storage ring in Uppsala. The construction is based on MicroChannel Plate time detectors of the electron mirror type and silicon p-i-n diodes, and permits the detectors to be stacked side-by-side to achieve large solid angle coverage. This kind of telescope measures the Time of Flight (ToF) and Energy (E) of the particle from which one can reconstruct mass. The combination of an ultra-thin cluster gas-jet target and thin carbon emitter foils allows one to measure heavy residues down to an energy of ∼ 35 keV/nucleon from the interactions of 400 MeV/nucleon 16 O with nat Xe gas targets

A compact Ultra High Vacuum (UHV) compatible instrument for time of flight energy measurements of slow heavy reaction products

Energy Technology Data Exchange (ETDEWEB)

Kuznetsov, A.V. [V.G.Khlopin Radium Institute, St. Petersburg (Russian Federation); Uppsala Univ. (Sweden). The Svedberg Lab.; Veldhuizen, E.J. van; Aleklett, K. [Uppsala Univ., (Sweden). Dept. of Radiation Sciences; Westerberg, L. [Uppsala University (Sweden). The Svedberg Lab.; Lyapin, V.G. [V.G.Khlopin Radium Institute, St. Petersburg (Russian Federation); Loveland, W. [Oregon State Univ., Corvallis, OR (United States). Dept. of Chemistry; Bondorf, J. [Niels Bohr Inst., Copenhagen (Denmark); Jakobsson, B. [Lund Univ. (Sweden). Dept. of Physics; Whitlow, H.J. [Lund Univ. (Sweden). Dept. of Nuclear Physics; Bouanani, M. El [Lund Univ. (Sweden). Dept. of Nuclear Physics; Univ. of North Texas, Denton, TX (United States). Dept. of Physics

2000-07-01

A compact Ultra High Vacuum (UHV) compatible instrument for time of flight energy measurements of slow heavy reaction products from nuclear reactions has been designed and tested at the CELSIUS storage ring in Uppsala. The construction is based on MicroChannel Plate time detectors of the electron mirror type and silicon p-i-n diodes, and permits the detectors to be stacked side-by-side to achieve large solid angle coverage. This kind of telescope measures the Time of Flight (ToF) and Energy (E) of the particle from which one can reconstruct mass. The combination of an ultra-thin cluster gas-jet target and thin carbon emitter foils allows one to measure heavy residues down to an energy of {approx} 35 keV/nucleon from the interactions of 400 MeV/nucleon {sup 16}O with {sup nat} Xe gas targets.

A compact Ultra-High Vacuum (UHV) compatible instrument for time of flight-energy measurements of slow heavy reaction products

International Nuclear Information System (INIS)

Kuznetsov, A.V.; Veldhuizen, E.J. van; Westerberg, L.; Lyapin, V.G.; Aleklett, K.; Loveland, W.; Bondorf, J.; Jakobsson, B.; Whitlow, H.J.; El Bouanani, M.

2000-01-01

A compact Ultra-High Vacuum (UHV) compatible instrument for time of flight-energy measurements of slow heavy reaction products from nuclear reactions has been designed and tested at the CELSIUS storage ring in Uppsala. The construction is based on MicroChannel Plate (MCP) time detectors of the electron mirror type and silicon p-i-n diodes, and permits the detectors to be stacked side-by-side to achieve large solid angle coverage. This kind of telescope measures the Time of Flight (ToF) and Energy (E) of the particle from which one can reconstruct mass. The combination of an ultra-thin cluster gas-jet target and thin carbon emitter foils allows one to measure heavy residues down to an energy of ∼35 keV/nucleon from the interactions of 400 MeV/nucleon 16 O with nat Xe gas targets

Quantitative measurement of mean inner potential and specimen thickness from high-resolution off-axis electron holograms of ultra-thin layered WSe2.

Science.gov (United States)

Winkler, Florian; Tavabi, Amir H; Barthel, Juri; Duchamp, Martial; Yucelen, Emrah; Borghardt, Sven; Kardynal, Beata E; Dunin-Borkowski, Rafal E

2017-07-01

The phase and amplitude of the electron wavefunction that has passed through ultra-thin flakes of WSe 2 is measured from high-resolution off-axis electron holograms. Both the experimental measurements and corresponding computer simulations are used to show that, as a result of dynamical diffraction, the spatially averaged phase does not increase linearly with specimen thickness close to an [001] zone axis orientation even when the specimen has a thickness of only a few layers. It is then not possible to infer the local specimen thickness of the WSe 2 from either the phase or the amplitude alone. Instead, we show that the combined analysis of phase and amplitude from experimental measurements and simulations allows an accurate determination of the local specimen thickness. The relationship between phase and projected potential is shown to be approximately linear for extremely thin specimens that are tilted by several degrees in certain directions from the [001] zone axis. A knowledge of the specimen thickness then allows the electrostatic potential to be determined from the measured phase. By using this combined approach, we determine a value for the mean inner potential of WSe 2 of 18.9±0.8V, which is 12% lower than the value calculated from neutral atom scattering factors. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Study of first electronic transition and hydrogen bonding state of ultra-thin water layer of nanometer thickness on an α-alumina surface by far-ultraviolet spectroscopy

Science.gov (United States)

Goto, Takeyoshi; Kinugasa, Tomoya

2018-05-01

The first electronic transition (A˜ ← X˜) and the hydrogen bonding state of an ultra-thin water layer of nanometer thickness between two α-alumina surfaces (0.5-20 nm) were studied using far-ultraviolet (FUV) spectroscopy in the wavelength range 140-180 nm. The ultra-thin water layer of nanometer thickness was prepared by squeezing a water droplet ( 1 μL) between a highly polished α-alumina prism and an α-alumina plate using a high pressure clamp ( 4.7 MPa), and the FUV spectra of the water layer at different thicknesses were measured using the attenuated total reflection method. As the water layer became thinner, the A˜ ← X˜ bands were gradually shifted to higher or lower energy relative to that of bulk water; at thicknesses smaller than 4 nm, these shifts were substantial (0.1-0.2 eV) in either case. The FUV spectra of the water layer with thickness lost at thicknesses below 4 nm, because of steric hydration forces between the α-alumina surfaces.

Quantitative measurement of mean inner potential and specimen thickness from high-resolution off-axis electron holograms of ultra-thin layered WSe{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Winkler, Florian, E-mail: f.winkler@fz-juelich.de [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, D-52425 Jülich (Germany); Peter Grünberg Institute 5 (PGI-5), Forschungszentrum Jülich, D-52425 Jülich (Germany); Tavabi, Amir H. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, D-52425 Jülich (Germany); Peter Grünberg Institute 5 (PGI-5), Forschungszentrum Jülich, D-52425 Jülich (Germany); Barthel, Juri [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, D-52425 Jülich (Germany); Gemeinschaftslabor für Elektronenmikroskopie (GFE), RWTH Aachen University, D-52074 Aachen (Germany); Duchamp, Martial [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, D-52425 Jülich (Germany); Peter Grünberg Institute 5 (PGI-5), Forschungszentrum Jülich, D-52425 Jülich (Germany); Yucelen, Emrah [FEI Company, Achtseweg Noord 5, Eindhoven 5600 KA (Netherlands); Borghardt, Sven; Kardynal, Beata E. [Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, D-52425 Jülich (Germany); and others

2017-07-15

The phase and amplitude of the electron wavefunction that has passed through ultra-thin flakes of WSe{sub 2} is measured from high-resolution off-axis electron holograms. Both the experimental measurements and corresponding computer simulations are used to show that, as a result of dynamical diffraction, the spatially averaged phase does not increase linearly with specimen thickness close to an [001] zone axis orientation even when the specimen has a thickness of only a few layers. It is then not possible to infer the local specimen thickness of the WSe{sub 2} from either the phase or the amplitude alone. Instead, we show that the combined analysis of phase and amplitude from experimental measurements and simulations allows an accurate determination of the local specimen thickness. The relationship between phase and projected potential is shown to be approximately linear for extremely thin specimens that are tilted by several degrees in certain directions from the [001] zone axis. A knowledge of the specimen thickness then allows the electrostatic potential to be determined from the measured phase. By using this combined approach, we determine a value for the mean inner potential of WSe{sub 2} of 18.9±0.8 V, which is 12% lower than the value calculated from neutral atom scattering factors. - Highlights: • Quantitative analysis of high resolution electron holograms of WSe{sub 2}. • Local specimen thickness determination and estimation of tilt angle. • Mean inner potential evaluation of WSe2 avoiding dynamical diffraction.

Ultra-high-speed Optical Signal Processing using Silicon Photonics

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

Comparison of ultra high performance supercritical fluid chromatography, ultra high performance liquid chromatography, and gas chromatography for the separation of synthetic cathinones.

Science.gov (United States)

Carnes, Stephanie; O'Brien, Stacey; Szewczak, Angelica; Tremeau-Cayel, Lauriane; Rowe, Walter F; McCord, Bruce; Lurie, Ira S

2017-09-01

A comparison of ultra high performance supercritical fluid chromatography, ultra high performance liquid chromatography, and gas chromatography for the separation of synthetic cathinones has been conducted. Nine different mixtures of bath salts were analyzed in this study. The three different chromatographic techniques were examined using a general set of controlled synthetic cathinones as well as a variety of other synthetic cathinones that exist as positional isomers. Overall 35 different synthetic cathinones were analyzed. A variety of column types and chromatographic modes were examined for developing each separation. For the ultra high performance supercritical fluid chromatography separations, analyses were performed using a series of Torus and Trefoil columns with either ammonium formate or ammonium hydroxide as additives, and methanol, ethanol or isopropanol organic solvents as modifiers. Ultra high performance liquid chromatographic separations were performed in both reversed phase and hydrophilic interaction chromatographic modes using SPP C18 and SPP HILIC columns. Gas chromatography separations were performed using an Elite-5MS capillary column. The orthogonality of ultra high performance supercritical fluid chromatography, ultra high performance liquid chromatography, and gas chromatography was examined using principal component analysis. For the best overall separation of synthetic cathinones, the use of ultra high performance supercritical fluid chromatography in combination with gas chromatography is recommended. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of high quality Cu(In,Ga)Se{sub 2} thin films prepared by rf-magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Bouchama, Idris [Departement d' Electronique, Faculte de Technologie, Universite de Msila (Algeria); Djessas, Kamal [Laboratoire Procedes Materiaux et Energie Solaire, PROMES-CNRS, Rambla de la Thermodynamique, Technosud, 66100 Perpignan (France); Bouloufa, Abdeslam [Laboratoire d' Electrochimie et Materiaux, Universite Ferhat Abbas de Setif (Algeria); Gauffier, Jean-Luc [Departement de Physique, INSA de Toulouse, 135, Avenue de Rangueil, 31077 Toulouse Cedex 4 (France)

2013-01-15

This paper reports the production of high quality polycrystalline thin layers of CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} (CIGS), using rf-magnetron sputtering, from a powder target. These films are designed to be used as absorbers in solar cells. The depositions were carried out at substrate temperatures below 250 C and glass substrates was used. The influence of the substrate temperatures on the crystalline quality as well as structural, optical and electrical properties of thin layers obtained has been studied. X-ray diffraction showed that the films were highly orientated in the (112) and/or (204)/(220) direction. In{sub 2}Se{sub 3} secondary phase was observed on the samples grown at lower substrate temperatures. The surface morphology of CIGS layers studied by Atomic Force Microscopy (AFM) and Scanning Electronic Microscopy (SEM) has been also discussed. The most surprising and exciting outcome of this study was that the as grown films were of near stoichiometric composition. Resistivity measurements were carried out using the four point probe method. The optical absorption showed that energy gap values are between 1.13 and 1.18 eV and rather sharp absorption fronts. Thin film resistivities are between 10.7 and 60.9 {Omega}.cm depending on the experimental growth conditions (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structure of a zinc oxide ultra-thin film on Rh(100)

Energy Technology Data Exchange (ETDEWEB)

Yuhara, J.; Kato, D.; Matsui, T. [Department of Materials, Physics and Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Mizuno, S. [Department of Molecular and Material Sciences, Kyushu University, Kasuga, Fukuoka 816–8580 (Japan)

2015-11-07

The structural parameters of ultra-thin zinc oxide films on Rh(100) are investigated using low-energy electron diffraction intensity (LEED I–V) curves, scanning tunneling microscopy (STM), and first-principles density functional theory (DFT) calculations. From the analysis of LEED I–V curves and DFT calculations, two optimized models A and B are determined. Their structures are basically similar to the planer h-BN ZnO(0001) structure, although some oxygen atoms protrude from the surface, associated with an in-plane shift of Zn atoms. From a comparison of experimental STM images and simulated STM images, majority and minority structures observed in the STM images represent the two optimized models A and B, respectively.

Ultra thin layer activation by recoil implantation of radioactive heavy ions. Applicability in wear and corrosion studies

International Nuclear Information System (INIS)

Lacroix, O.; Sauvage, T.; Blondiaux, G.; Guinard, L.

1997-07-01

A new calibration procedure is proposed for the application of recoil implantation of radioactive heavy ions (energies between a few hundred keV and a few MeV) into the near surface of materials as part of a research programme on sub-micrometric wear or corrosion phenomena. The depth profile of implanted radioelements is performed by using ultra thin deposited films obtained by cathode sputtering under argon plasma. Two curves for 56 Co ion in nickel have been determined for implantation depths of 110 and 200 nm, respectively, and stress the feasibility and reproducibility of this method for such activated depths. The achieved surface loss detection sensitivities are about 1 and 2 nm respectively. The on line detection mode is performed directly on the sample of interest. A general description of the method is presented. A study of the reaction kinematics followed by a general treatment on the irradiation parameters to be adopted are also developed with the intention of using the ultra thin layer activation method (UTLA) to further applications in research and industry. (author)

Performance enhancement in organic photovoltaic solar cells using iridium (Ir) ultra-thin surface modifier (USM)

Science.gov (United States)

Pandey, Rina; Lim, Ju Won; Kim, Jung Hyuk; Angadi, Basavaraj; Choi, Ji Won; Choi, Won Kook

2018-06-01

In this study, Iridium (Ir) metallic layer as an ultra-thin surface modifier (USM) was deposited on ITO coated glass substrate using radio frequency magnetron sputtering for improving the photo-conversion efficiency of organic photovoltaic cells. Ultra-thin Ir acts as a surface modifier replacing the conventional hole transport layer (HTL) PEDOT:PSS in organic photovoltaic (OPV) cells with two different active layers P3HT:PC60BM and PTB7:PC70BM. The Ir USM (1.0 nm) coated on ITO glass substrate showed transmittance of 84.1% and work function of >5.0 eV, which is higher than that of ITO (4.5-4.7 eV). The OPV cells with Ir USM (1.0 nm) exhibits increased power conversion efficiency of 3.70% (for P3HT:PC60BM active layer) and 7.28% (for PTB7:PC70BM active layer) under 100 mW/cm2 illumination (AM 1.5G) which are higher than those of 3.26% and 6.95% for the same OPV cells but with PEDOT:PSS as HTL instead of Ir USM. The results reveal that the chemically stable Ir USM layer could be used as an alternative material for PEDOT:PSS in organic photovoltaic cells.

Growth of high-quality large-area MgB2 thin films by reactive evaporation

International Nuclear Information System (INIS)

Moeckly, B H; Ruby, W S

2006-01-01

We report a new in situ reactive deposition thin film growth technique for the production of MgB 2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB 2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB 2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials up to 4 inch in diameter. This technique allows growth of double-sided, large-area films in the intermediate temperature range of 400-600 deg. C. These films are clean, well-connected, and consistently display T c values of 38-39 K with low resistivity and residual resistivity values. They are also robust and uncommonly stable upon exposure to atmosphere and water. (rapid communication)

Molecular dynamics simulations of disjoining pressure effects in ultra-thin water films on a metal surface

Science.gov (United States)

Hu, Han; Sun, Ying

2013-11-01

Disjoining pressure, the excess pressure in an ultra-thin liquid film as a result of van der Waals interactions, is important in lubrication, wetting, flow boiling, and thin film evaporation. The classic theory of disjoining pressure is developed for simple monoatomic liquids. However, real world applications often utilize water, a polar liquid, for which fundamental understanding of disjoining pressure is lacking. In the present study, molecular dynamics (MD) simulations are used to gain insights into the effect of disjoining pressure in a water thin film. Our MD models were firstly validated against Derjaguin's experiments on gold-gold interactions across a water film and then verified against disjoining pressure in an argon thin film using the Lennard-Jones potential. Next, a water thin film adsorbed on a gold surface was simulated to examine the change of vapor pressure with film thickness. The results agree well with the classic theory of disjoining pressure, which implies that the polar nature of water molecules does not play an important role. Finally, the effects of disjoining pressure on thin film evaporation in nanoporous membrane and on bubble nucleation are discussed.

FY1995 study to create the high density magnetic recording devices by using an ultra clean sputtering process; 1995 nendo choseijo sputter process ni yoru chokomitsudo jiki kiroku device no sosei

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

It is important to control microstructure of thin film magnetic devices such as recording heads and media, in order to induce excellent magnetic properties. Since the impurities in the sputtering atmosphere is easily thought to affect strongly on the initial film growth, we will develop the highly purified sputtering atmosphere to establish a fabrication technology of ultra thin metallic films with desirable microstructure. A specialized multi-sputtering system which has extremely clean atmosphere (impurity level: 1/10000 compared to conventional systems) were realized by (a) decreasing out-gassing rate from vacuum chamber, pumping system, cathode, robot, etc. and (b) using ultra-clean processing gas. The base pressure was 8 x 10{sup -12} Torr (XHV) and the build-up rate was less than 1 x 10{sup -8} Torrl/sec. From the correlation between the microstructure and magnetic properties of a part of spin-valve GMR films, the guiding principle for the microstructural design were clarified to induce the exchange coupling effectively at the ferro/antiferromagnetic interface and to enhance the GMR effect at the magnetic/non-magnetic interface. The mechanism of' Cr segregation on the grain boundaries was clarified, in thin film media deposited under ultra clean sputtering process. The material specification of the magnetic ultra thin film media for high density recording with low media noise were designed from view of the thermal agitation. (NEDO)

Ultra-high resolution C-Arm CT arthrography of the wrist: Radiation dose and image quality compared to conventional multidetector computed tomography

Energy Technology Data Exchange (ETDEWEB)

Werncke, Thomas, E-mail: Werncke.Thomas@mh-hannover.de [Institute of Diagnostic and Interventional Radiology, Hannover Medical School, Carl-Neuberg-Str. 1, 30625 Hannover (Germany); Sonnow, Lena; Meyer, Bernhard C. [Institute of Diagnostic and Interventional Radiology, Hannover Medical School, Carl-Neuberg-Str. 1, 30625 Hannover (Germany); Lüpke, Matthias [University of Veterinary Medicine Hannover, Institute for General Radiology and Medical Physics, Bischofsholer Damm 15, 30173 Hannover (Germany); Hinrichs, Jan; Wacker, Frank K.; Falck, Christian von [Institute of Diagnostic and Interventional Radiology, Hannover Medical School, Carl-Neuberg-Str. 1, 30625 Hannover (Germany)

2017-04-15

Objective: Objective of this phantom and cadaveric study was to compare the effective radiation dose (ED) and image quality (IQ) between C-arm computed tomography (CACT) using an ultra-high resolution 1 × 1 binning with a standard 16-slice CT (MDCT) arthrography of the wrist. Methods: ED was determined with thermoluminescence dosimetry using an anthropomorphic phantom and different patient positions. Imaging was conducted in 10 human cadaveric wrists after tri-compartmental injection of diluted iodinated contrast material and a wire phantom. IQ of MDCT was compared with CACT reconstructed with a soft (CACT1) and sharp (CACT2) kernel. High and low contrast resolution was determined. Three radiologists assessed IQ of wrist structures and occurrence of image artifacts using a 5-point Likert scale. Results: ED of MDCT was comparable to standard CACT (4.3 μSv/3.7 μSv). High contrast resolution was best for CACT2, decreased to CACT1 and MDCT. Low contrast resolution increased between CACT2 and MDCT (P < 0.001). IQ was best for CACT2 (1.3 ± 0.5), decreased to CACT1 (1.9 ± 0.6) and MDCT (3.5 ± 0.6). Non-compromising artifacts were only reported for CACT. Conclusions: The results of this phantom and cadaveric study indicate that ultra-high resolution C-Arm CT arthrography of the wrist bears the potential to outperform MDCT arthrography in terms of image quality and workflow at the cost of mildly increasing image artifacts while radiation dose to the patient is comparably low for both, MDCT and C-Arm CT.

An ultra-high vacuum scanning tunneling microscope operating at sub-Kelvin temperatures and high magnetic fields for spin-resolved measurements

Science.gov (United States)

Salazar, C.; Baumann, D.; Hänke, T.; Scheffler, M.; Kühne, T.; Kaiser, M.; Voigtländer, R.; Lindackers, D.; Büchner, B.; Hess, C.

2018-06-01

We present the construction and performance of an ultra-low-temperature scanning tunneling microscope (STM), working in ultra-high vacuum (UHV) conditions and in high magnetic fields up to 9 T. The cryogenic environment of the STM is generated by a single-shot 3He magnet cryostat in combination with a 4He dewar system. At a base temperature (300 mK), the cryostat has an operation time of approximately 80 h. The special design of the microscope allows the transfer of the STM head from the cryostat to a UHV chamber system, where samples and STM tips can be easily exchanged. The UHV chambers are equipped with specific surface science treatment tools for the functionalization of samples and tips, including high-temperature treatments and thin film deposition. This, in particular, enables spin-resolved tunneling measurements. We present test measurements using well-known samples and tips based on superconductors and metallic materials such as LiFeAs, Nb, Fe, and W. The measurements demonstrate the outstanding performance of the STM with high spatial and energy resolution as well as the spin-resolved capability.

Ultra-High-Resolution Computed Tomography of the Lung: Image Quality of a Prototype Scanner

Science.gov (United States)

Kakinuma, Ryutaro; Moriyama, Noriyuki; Muramatsu, Yukio; Gomi, Shiho; Suzuki, Masahiro; Nagasawa, Hirobumi; Kusumoto, Masahiko; Aso, Tomohiko; Muramatsu, Yoshihisa; Tsuchida, Takaaki; Tsuta, Koji; Maeshima, Akiko Miyagi; Tochigi, Naobumi; Watanabe, Shun-ichi; Sugihara, Naoki; Tsukagoshi, Shinsuke; Saito, Yasuo; Kazama, Masahiro; Ashizawa, Kazuto; Awai, Kazuo; Honda, Osamu; Ishikawa, Hiroyuki; Koizumi, Naoya; Komoto, Daisuke; Moriya, Hiroshi; Oda, Seitaro; Oshiro, Yasuji; Yanagawa, Masahiro; Tomiyama, Noriyuki; Asamura, Hisao

2015-01-01

Purpose The image noise and image quality of a prototype ultra-high-resolution computed tomography (U-HRCT) scanner was evaluated and compared with those of conventional high-resolution CT (C-HRCT) scanners. Materials and Methods This study was approved by the institutional review board. A U-HRCT scanner prototype with 0.25 mm x 4 rows and operating at 120 mAs was used. The C-HRCT images were obtained using a 0.5 mm x 16 or 0.5 mm x 64 detector-row CT scanner operating at 150 mAs. Images from both scanners were reconstructed at 0.1-mm intervals; the slice thickness was 0.25 mm for the U-HRCT scanner and 0.5 mm for the C-HRCT scanners. For both scanners, the display field of view was 80 mm. The image noise of each scanner was evaluated using a phantom. U-HRCT and C-HRCT images of 53 images selected from 37 lung nodules were then observed and graded using a 5-point score by 10 board-certified thoracic radiologists. The images were presented to the observers randomly and in a blinded manner. Results The image noise for U-HRCT (100.87 ± 0.51 Hounsfield units [HU]) was greater than that for C-HRCT (40.41 ± 0.52 HU; P < .0001). The image quality of U-HRCT was graded as superior to that of C-HRCT (P < .0001) for all of the following parameters that were examined: margins of subsolid and solid nodules, edges of solid components and pulmonary vessels in subsolid nodules, air bronchograms, pleural indentations, margins of pulmonary vessels, edges of bronchi, and interlobar fissures. Conclusion Despite a larger image noise, the prototype U-HRCT scanner had a significantly better image quality than the C-HRCT scanners. PMID:26352144

Ultra-High-Resolution Computed Tomography of the Lung: Image Quality of a Prototype Scanner.

Directory of Open Access Journals (Sweden)

Ryutaro Kakinuma

Full Text Available The image noise and image quality of a prototype ultra-high-resolution computed tomography (U-HRCT scanner was evaluated and compared with those of conventional high-resolution CT (C-HRCT scanners.This study was approved by the institutional review board. A U-HRCT scanner prototype with 0.25 mm x 4 rows and operating at 120 mAs was used. The C-HRCT images were obtained using a 0.5 mm x 16 or 0.5 mm x 64 detector-row CT scanner operating at 150 mAs. Images from both scanners were reconstructed at 0.1-mm intervals; the slice thickness was 0.25 mm for the U-HRCT scanner and 0.5 mm for the C-HRCT scanners. For both scanners, the display field of view was 80 mm. The image noise of each scanner was evaluated using a phantom. U-HRCT and C-HRCT images of 53 images selected from 37 lung nodules were then observed and graded using a 5-point score by 10 board-certified thoracic radiologists. The images were presented to the observers randomly and in a blinded manner.The image noise for U-HRCT (100.87 ± 0.51 Hounsfield units [HU] was greater than that for C-HRCT (40.41 ± 0.52 HU; P < .0001. The image quality of U-HRCT was graded as superior to that of C-HRCT (P < .0001 for all of the following parameters that were examined: margins of subsolid and solid nodules, edges of solid components and pulmonary vessels in subsolid nodules, air bronchograms, pleural indentations, margins of pulmonary vessels, edges of bronchi, and interlobar fissures.Despite a larger image noise, the prototype U-HRCT scanner had a significantly better image quality than the C-HRCT scanners.

The share of ultra-processed foods determines the overall nutritional quality of diets in Brazil.

Science.gov (United States)

Louzada, Maria Laura da Costa; Ricardo, Camila Zancheta; Steele, Euridice Martinez; Levy, Renata Bertazzi; Cannon, Geoffrey; Monteiro, Carlos Augusto

2018-01-01

To estimate the dietary share of ultra-processed foods and to determine its association with the overall nutritional quality of diets in Brazil. Cross-sectional. Brazil. A representative sample of 32 898 Brazilians aged ≥10 years was studied. Food intake data were collected. We calculated the average dietary content of individual nutrients and compared them across quintiles of energy share of ultra-processed foods. Then we identified nutrient-based dietary patterns, and evaluated the association between quintiles of dietary share of ultra-processed foods and the patterns' scores. The mean per capita daily dietary energy intake was 7933 kJ (1896 kcal), with 58·1 % from unprocessed or minimally processed foods, 10·9 % from processed culinary ingredients, 10·6 % from processed foods and 20·4 % from ultra-processed foods. Consumption of ultra-processed foods was directly associated with high consumption of free sugars and total, saturated and trans fats, and with low consumption of protein, dietary fibre, and most of the assessed vitamins and minerals. Four nutrient-based dietary patterns were identified. 'Healthy pattern 1' carried more protein and micronutrients, and less free sugars. 'Healthy pattern 2' carried more vitamins. 'Healthy pattern 3' carried more dietary fibre and minerals and less free sugars. 'Unhealthy pattern' carried more total, saturated and trans fats, and less dietary fibre. The dietary share of ultra-processed foods was inversely associated with 'healthy pattern 1' (-0·16; 95 % CI -0·17, -0·15) and 'healthy pattern 3' (-0·18; 95 % CI -0·19, -0·17), and directly associated with 'unhealthy pattern' (0·17; 95 % CI 0·15, 0·18). Dietary share of ultra-processed foods determines the overall nutritional quality of diets in Brazil.

Ultra-Sensitive Lab-on-a-Chip Detection of Sudan I in Food using Plasmonics-Enhanced Diatomaceous Thin Film.

Science.gov (United States)

Kong, Xianming; Squire, Kenny; Chong, Xinyuan; Wang, Alan X

2017-09-01

Sudan I is a carcinogenic compound containing an azo group that has been illegally utilized as an adulterant in food products to impart a bright red color to foods. In this paper, we develop a facile lab-on-a-chip device for instant, ultra-sensitive detection of Sudan I from real food samples using plasmonics-enhanced diatomaceous thin film, which can simultaneously perform on-chip separation using thin layer chromatography (TLC) and highly specific sensing using surface-enhanced Raman scattering (SERS) spectroscopy. Diatomite is a kind of nature-created photonic crystal biosilica with periodic pores and was used both as the stationary phase of the TLC plate and photonic crystals to enhance the SERS sensitivity. The on-chip chromatography capability of the TLC plate was verified by isolating Sudan I in a mixture solution containing Rhodamine 6G, while SERS sensing was achieved by spraying gold colloidal nanoparticles into the sensing spot. Such plasmonics-enhanced diatomaceous film can effectively detect Sudan I with more than 10 times improvement of the Raman signal intensity than commercial silica gel TLC plates. We applied this lab-on-a-chip device for real food samples and successfully detected Sudan I in chili sauce and chili oil down to 1 ppm, or 0.5 ng/spot. This on-chip TLC-SERS biosensor based on diatomite biosilica can function as a cost-effective, ultra-sensitive, and reliable technology for screening Sudan I and many other illicit ingredients to enhance food safety.

Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

Energy Technology Data Exchange (ETDEWEB)

Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Lamagna, Luca; Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy); Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Milano (Italy); Brammertz, Guy; Meuris, Marc [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium)

2010-01-01

Capping III-V compound surfaces with Ge ultra-thin layer might be a viable pathway to passivate the electrically active interface traps which usually jeopardize the integration of III-V materials in metal-oxide-semiconductor devices. As the physical nature of such traps is intrinsically related to the chemical details of the interface composition, the structural and compositional features of the Ge/GaAs interface were thoroughly investigated in two different configurations, the atomic layer deposition of La-doped ZrO{sub 2} films on Ge-capped GaAs and the ultra-high vacuum based molecular beam deposition of GeO{sub 2}/Ge double stack on in situ prepared GaAs. In the former case, the intercalation of a Ge interface layer is shown to suppress the concentration of interface Ga-O, As-O and elemental As bonding which were significantly detected in case of the direct oxide deposition on GaAs. In the latter case, the incidence of two different in situ surface preparations, the Ar sputtering and the atomic H cleaning, on the interface composition is elucidated and the beneficial role played by the atomic H exposure in reducing the semiconductor-oxygen bonds at the interface level is demonstrated.

Stretchers and compressors for ultra-high power laser systems

Energy Technology Data Exchange (ETDEWEB)

Yakovlev, I V [Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)

2014-05-30

This review is concerned with pulse stretchers and compressors as key components of ultra-high power laser facilities that take advantage of chirped-pulse amplification. The potentialities, characteristics, configurations and methods for the matching and alignment of these devices are examined, with particular attention to the history of the optics of ultra-short, ultra-intense pulses before and after 1985, when the chirped-pulse amplification method was proposed, which drastically changed the view of the feasibility of creating ultra-high power laser sources. The review is intended primarily for young scientists and experts who begin to address the amplification and compression of chirped pulses, experts in laser optics and all who are interested in scientific achievements in the field of ultra-high power laser systems. (review)

Foldover, quasi-periodicity, spin-wave instabilities in ultra-thin films subject to RF fields

Energy Technology Data Exchange (ETDEWEB)

D' Aquino, M. [Department of Electrical Engineering, University of Napoli ' Federico II' , Naples I-80125 (Italy)]. E-mail: mdaquino@unina.it; Bertotti, G. [Istituto Nazionale di Ricerca Metrologica (INRIM), I-10135 Turin (Italy); Serpico, C. [Department of Electrical Engineering, University of Napoli ' Federico II' , Naples I-80125 (Italy); Mayergoyz, I.D. [ECE Department and UMIACS, University of Maryland, College Park, MD 20742 (United States); Bonin, R. [Istituto Nazionale di Ricerca Metrologica (INRIM), I-10135 Turin (Italy); Guida, G. [Department of Electrical Engineering, University of Napoli ' Federico II' , Naples I-80125 (Italy)

2007-09-15

We study magnetization dynamics in a uniaxial ultra-thin ferromagnetic disk subject to spatially uniform microwave external fields. The rotational invariance of the system is such that the only admissible spatially uniform steady states are periodic (P-modes) and quasi-periodic (Q-modes) modes. The stability of P-modes versus spatially uniform and nonuniform perturbations is studied by using spin-wave analysis and the instability diagram for all possible P-modes is computed. The predictions of the spin-wave analysis are compared with micromagnetic simulations.

Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

Science.gov (United States)

Cui, Xu

MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

Ultra high field magnetic resonance imaging

International Nuclear Information System (INIS)

Lethimonnier, F.; Vedrine, P.

2007-01-01

Understanding human brain function, brain development and brain dysfunction is one of the great challenges of the twenty first century. Biomedical imaging has now run up against a number of technical constraints that are exposing limits to its potential. In order to overcome the current limits to high-field magnetic resonance cerebral imaging (MRI) and unleash its fullest potential, the Cea has built NeuroSpin, an ultra-high-field neuroimaging facility at its Saclay centre (in the Essonne). NeuroSpin already boasts three fully operational MRI systems. The first is a 3-tesla high-field system and the second is a very-high-field 7-tesla system, both of which are dedicated to clinical studies and investigations in humans, while the third is an ultra-high-field 17.65-tesla system designed for studies on small animals. In 2011, NeuroSpin will be commissioning an 11.7-tesla ultra-high-field system of unprecedented power that is designed for research on human subjects. The level of the magnetic field and the scale required will make this joint French-German project to build the magnet a breakthrough in the international arena. (authors)

Characterization of ultra-thin TiO2 films grown on Mo(112)

International Nuclear Information System (INIS)

Kumar, D.; Chen, M.S.; Goodman, D.W.

2006-01-01

Ultra-thin TiO 2 films were grown on a Mo(112) substrate by stepwise vapor depositing of Ti onto the sample surface followed by oxidation at 850 K. X-ray photoelectron spectroscopy showed that the Ti 2p peak position shifts from lower to higher binding energy with an increase in the Ti coverage from sub- to multilayer. The Ti 2p peak of a TiO 2 film with more than a monolayer coverage can be resolved into two peaks, one at 458.1 eV corresponding to the first layer, where Ti atoms bind to the substrate Mo atoms through Ti-O-Mo linkages, and a second feature at 458.8 eV corresponding to multilayer TiO 2 where the Ti atoms are connected via Ti-O-Ti linkages. Based on these assignments, the single Ti 2p 3/2 peak at 455.75 eV observed for the Mo(112)-(8 x 2)-TiO x monolayer film can be assigned to Ti 3+ , consistent with our previous results obtained with high-resolution electron energy loss spectroscopy

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Directory of Open Access Journals (Sweden)

Jaekyun Kim

2015-10-01

Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

High-Quality Ultrathin Gold Layers For Use In Plasmonic And Metamaterials Applications

DEFF Research Database (Denmark)

Sukham, Johneph; Takayama, Osamu; Lavrinenko, Andrei

2018-01-01

The propagation of electromagnetic waves can be manipulated at the nanoscale by surface plasmons supported by ultra thin metal layers. An adhesion layer, with thickness in the order of few nanometerss is used for depositing ultra thin metal gold layers. Cr and Ti are the most popular metallic...... adhesion layers. Apart from them, a non metallic silane based wetting layer like (3-Aminopropyl)trimethoxysilane (APTMS) can be used. The behaviour of the propagating surface plasmons due to the influence of these adhesion layers has not been thoroughly investigated. To study the influence of the adhesion...... layers on propagating plasmons for use in plasmonic and metamaterial applications,we experimentally compared the performances of the ultra-thin gold layers using Cr and APTMS adhesion layers and without any adhesion layer. We show that the gold layers using APTMS adhesion exhibit short range surface...

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

Science.gov (United States)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Laser Radiation Pressure Acceleration of Monoenergetic Protons in an Ultra-Thin Foil

Science.gov (United States)

Eliasson, Bengt; Liu, Chuan S.; Shao, Xi; Sagdeev, Roald Z.; Shukla, Padma K.

2009-11-01

We present theoretical and numerical studies of the acceleration of monoenergetic protons in a double layer formed by the laser irradiation of an ultra-thin film. The stability of the foil is investigated by direct Vlasov-Maxwell simulations for different sets of laser-plasma parameters. It is found that the foil is stable, due to the trapping of both electrons and ions in the thin laser-plasma interaction region, where the electrons are trapped in a potential well composed of the ponderomo-tive potential of the laser light and the electrostatic potential due to the ions, and the ions are trapped in a potential well composed of the inertial potential in an accelerated frame and the electrostatic potential due to the electrons. The result is a stable double layer, where the trapped ions are accelerated to monoenergetic energies up to 100 MeV and beyond, which makes them suitable for medical applications cancer treatment. The underlying physics of trapped and untapped ions in a double layer is also investigated theoretically and numerically.

Facing-target sputtering deposition of ZnO films with Pt ultra-thin layers for gas-phase photocatalytic application

International Nuclear Information System (INIS)

Zhang Zhonghai; Hossain, Md. Faruk.; Arakawa, Takuya; Takahashi, Takakazu

2010-01-01

In this paper, various zinc oxide (ZnO) films are deposited by a versatile and effective dc-reactive facing-target sputtering method. The ratios of Ar to O 2 in the mixture gas are varied from 8:2 to 6:4 at a fixed sputtering pressure of 1.0 Pa. X-ray diffraction, spectrophotometer and scanning electron microscope are used to study the crystal structure, optical property and surface morphology of the as-deposited films. The Pt ultra-thin layer, ∼2 nm thick, is deposited on the surface of ZnO film by dc diode sputtering with a mesh mask controlling the coated area. The photocatalytic activity of ZnO films and Pt-ZnO films is evaluated by decomposition of methanol under UV-vis light irradiation. The variation of photocatalytic activity depends on the ratios of Ar to O 2 , which is mainly attributed to the different grain size and carrier mobility. Though the pure ZnO film normally shows a low gas-phase photocatalytic activity, its activity is significantly enhanced by depositing Pt ultra-thin layer.

Prediction of transmittance spectra for transparent composite electrodes with ultra-thin metal layers

Energy Technology Data Exchange (ETDEWEB)

Zhao, Zhao; Alford, T. L., E-mail: TA@asu.edu [School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Khorasani, Arash Elhami [ON Semiconductor Corp., Phoenix, Arizona 85005 (United States); Theodore, N. D. [CHD-Fab, Freescale Semiconductor Inc., Tempe, Arizona 85224 (United States); Dhar, A. [Intel Corp., 2501 NW 229th Ave, Hillsboro, Oregon 97124 (United States)

2015-11-28

Recent interest in indium-free transparent composite-electrodes (TCEs) has motivated theoretical and experimental efforts to better understand and enhance their electrical and optical properties. Various tools have been developed to calculate the optical transmittance of multilayer thin-film structures based on the transfer-matrix method. However, the factors that affect the accuracy of these calculations have not been investigated very much. In this study, two sets of TCEs, TiO{sub 2}/Au/TiO{sub 2} and TiO{sub 2}/Ag/TiO{sub 2}, were fabricated to study the factors that affect the accuracy of transmittance predictions. We found that the predicted transmittance can deviate significantly from measured transmittance for TCEs that have ultra-thin plasmonic metal layers. The ultrathin metal layer in the TCE is typically discontinuous. When light interacts with the metallic islands in this discontinuous layer, localized surface plasmons are generated. This causes extra light absorption, which then leads to the actual transmittance being lower than the predicted transmittance.

Optical spin-to-orbital angular momentum conversion in ultra-thin metasurfaces with arbitrary topological charges

Energy Technology Data Exchange (ETDEWEB)

Bouchard, Frédéric; De Leon, Israel; Schulz, Sebastian A.; Upham, Jeremy; Karimi, Ebrahim, E-mail: ekarimi@uottawa.ca [Department of Physics, University of Ottawa, 25 Templeton, Ottawa, Ontario K1N 6N5 Canada (Canada); Boyd, Robert W. [Department of Physics, University of Ottawa, 25 Templeton, Ottawa, Ontario K1N 6N5 Canada (Canada); Institute of Optics, University of Rochester, Rochester, New York 14627 (United States)

2014-09-08

Orbital angular momentum associated with the helical phase-front of optical beams provides an unbounded “space” for both classical and quantum communications. Among the different approaches to generate and manipulate orbital angular momentum states of light, coupling between spin and orbital angular momentum allows a faster manipulation of orbital angular momentum states because it depends on manipulating the polarisation state of light, which is simpler and generally faster than manipulating conventional orbital angular momentum generators. In this work, we design and fabricate an ultra-thin spin-to-orbital angular momentum converter, based on plasmonic nano-antennas and operating in the visible wavelength range that is capable of converting spin to an arbitrary value of orbital angular momentum ℓ. The nano-antennas are arranged in an array with a well-defined geometry in the transverse plane of the beam, possessing a specific integer or half-integer topological charge q. When a circularly polarised light beam traverses this metasurface, the output beam polarisation switches handedness and the orbital angular momentum changes in value by ℓ=±2qℏ per photon. We experimentally demonstrate ℓ values ranging from ±1 to ±25 with conversion efficiencies of 8.6% ± 0.4%. Our ultra-thin devices are integratable and thus suitable for applications in quantum communications, quantum computations, and nano-scale sensing.

Optical spin-to-orbital angular momentum conversion in ultra-thin metasurfaces with arbitrary topological charges

International Nuclear Information System (INIS)

Bouchard, Frédéric; De Leon, Israel; Schulz, Sebastian A.; Upham, Jeremy; Karimi, Ebrahim; Boyd, Robert W.

2014-01-01

Orbital angular momentum associated with the helical phase-front of optical beams provides an unbounded “space” for both classical and quantum communications. Among the different approaches to generate and manipulate orbital angular momentum states of light, coupling between spin and orbital angular momentum allows a faster manipulation of orbital angular momentum states because it depends on manipulating the polarisation state of light, which is simpler and generally faster than manipulating conventional orbital angular momentum generators. In this work, we design and fabricate an ultra-thin spin-to-orbital angular momentum converter, based on plasmonic nano-antennas and operating in the visible wavelength range that is capable of converting spin to an arbitrary value of orbital angular momentum ℓ. The nano-antennas are arranged in an array with a well-defined geometry in the transverse plane of the beam, possessing a specific integer or half-integer topological charge q. When a circularly polarised light beam traverses this metasurface, the output beam polarisation switches handedness and the orbital angular momentum changes in value by ℓ=±2qℏ per photon. We experimentally demonstrate ℓ values ranging from ±1 to ±25 with conversion efficiencies of 8.6% ± 0.4%. Our ultra-thin devices are integratable and thus suitable for applications in quantum communications, quantum computations, and nano-scale sensing.

Fiscal 1996 survey report. `Ultra high electronic technology development promotion project` under consignment from NEDO; 1996 nendo kenkyu seika hokokusho. Shin Energy Sangyo Gijutsu Sogo Kaihatsu Kiko itaku jigyo `chosentan denshi gijutsu kaihatsu sokushin jigyo`

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-05-01

For the purpose of establishing ultra high technology of a next next generation level which is a basic technology in the electronic information field, a key to the realization of the high grade information society and a common technology base giving marked influences to the wide range industrial field, the R and D was started of ultra fine processing process technology, technologies on limit measuring/analysis/control and new functional electronic materials. Themes of the R and D are electronic beam direct picture drawing system technology, ultra short wavelength electromagnetic radiation patterning/system technology, ultra fine sensitizing technology to draw pictures on metal and crystal surfaces using ultra short wavelength laser beams, shading system technology of shading mask to be used to the process of drawing ultra high accuracy and complicated figures, ultra high tech plasma reactive measuring/analysis/control technologies which become the base of ultra thin films and ultra fine etching using plasma, ultra high tech cleaning base technology, ultra high sensitivity medium technology, new functional element/film formation technology, etc. 137 refs., 358 figs., 38 tabs.

High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Science.gov (United States)

Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.

2018-05-01

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

Design and Fabrication of a Piezoresistive Pressure Sensor for Ultra High Temperature Environment

International Nuclear Information System (INIS)

Zhao, L B; Zhao, Y L; Jiang, Z D

2006-01-01

In order to solve the pressure measurement problem in the harsh environment, a piezoresistive pressure sensor has been developed, which can be used under high temperature above 200 deg. C and is able to endure instantaneous ultra high temperature (2000deg. C, duration≤2s) impact. Based on the MEMS (Micro Electro-Mechanical System) and integrated circuit technology, the piezoresistive pressure sensor's sensitive element was fabricated and constituted by silicon substrate, a thin buried silicon dioxide layer, four p-type resistors in the measuring circuit layer by boron ion implantation and photolithography, the top SiO2 layer by oxidation, stress matching Si3N4 layer, and a Ti-Pt-Au beam lead layer for connecting p-type resistors by sputtering. In order to decrease the leak-current influence to sensor in high temperature above 200deg. C, the buried SiO2 layer with the thickness 367 nm was fabricated by the SIMOX (Separation by Implantation of Oxygen) technology, which was instead of p-n junction to isolate the upper measuring circuit layer from Si substrate. In order to endure instantaneous ultra high temperature impact, the mechanical structure with cantilever and diaphragm and transmitting beam was designed. By laser welding and high temperature packaging technology, the high temperature piezoresistive pressure sensor was fabricated with range of 120MPa. After the thermal compensation, the sensor's thermal zero drift k 0 and thermal sensitivity drift k s were easy to be less than 3x10 -4 FS/deg. C. The experimental results show that the developed piezoresistive pressure sensor has good performances under high temperature and is able to endure instantaneous ultra high temperature impact, which meets the requirements of modern industry, such as aviation, oil, engine, etc

Effect of ambient on electrical transport properties of ultra-thin Au nanowires

Science.gov (United States)

Amin, Kazi Rafsanjani; Kundu, Subhajit; Biswas, Sangram; Roy, Ahin; Singh, Abhishek Kumar; Ravishankar, N.; Bid, Aveek

2016-12-01

In this letter we present systematic studies of the dynamics of surface adsorption of various chemicals on ultra-thin single crystalline gold nanowires (AuNW) through sensitive resistance fluctuation spectroscopy measurements coupled with ab initio simulations. We show that, contrary to expectations, the adsorption of common chemicals like methanol and acetone has a profound impact on the electrical transport properties of the AuNW. Our measurements and subsequent calculations establish conclusively that in AuNW, semiconductor-like sensitivity to the ambient arises because of changes induced in its local density of states by the surface adsorbed molecules. The extreme sensitivity of the resistance fluctuations of the AuNW to ambient suggests their possible use as solid-state sensors.

Study on characteristics of a double-conductible channel organic thin-film transistor with an ultra-thin hole-blocking layer

International Nuclear Information System (INIS)

Guang-Cai, Yuan; Zheng, Xu; Su-Ling, Zhao; Fu-Jun, Zhang; Xue-Yan, Tian; Xu-Rong, Xu; Na, Xu

2009-01-01

The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers are limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at V DS = −20 V showed excellent hole mobility μFE and threshold voltage V TH of 0.58 cm 2 /(V·s) and −4.6 V, respectively

Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty.

Science.gov (United States)

Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

2013-01-01

Primary cheek teratomas are rare with joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence.

The kinetics of dewetting ultra-thin Si layers from silicon dioxide

International Nuclear Information System (INIS)

Aouassa, M; Favre, L; Ronda, A; Berbezier, I; Maaref, H

2012-01-01

In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy E H ∼ 3.2 eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x ∼ t 0.45 consistent with a surface diffusion-limited mechanism. It also evolves as x ∼ h -1 as expected from mass conservation in the absence of thickened rim. When the surface energy is isotropic (during dewetting of amorphous Si) the dynamics of dewetting is considerably modified: firstly, there is no measurable breaking time; secondly, the speed of dewetting is two orders of magnitude larger than for crystalline Si; and thirdly, the activation energy of dewetting is much smaller due to the different driving

Thin layer activation and ultra thin layer activation: two complementary techniques for wear and corrosion studies in various fields

International Nuclear Information System (INIS)

Sauvage, T.; Vincent, L.; Blondiaux, G.

2002-01-01

Thin layer activation (TLA) is widely used since more than 25 years to study surface wear or corrosion. This well known technique uses most of the time charged particles activation, which gives sensitivity in the range of the micrometer, except when the fluid mode of detection is utilized. In this case application of the method is limited to phenomena where we have transport of radioactive fragments to detection point. The main disadvantage of this procedure is the error due to trapping phenomena between the wear or corrosion point and detection setup. So the ultra thin layer activation (UTLA) has been developed to get nanometric sensitivity without using any fluid for radioactivity transportation, which is the main source of error of the TLA technique. In this paper we shall briefly describe the TLA technique and the most important fields of application. Then we shall emphasise on UTLA with a presentation of the principle of the method and actual running of application. The main problem concerning UTLA is calibration which requires the use of thin films (usually 10 to 100 nanometers) deposited on substrate. This process is time consuming and we shall demonstrate how running software developed in the lab can solve it. We shall finish the presentation by giving some potential application of the technique in various fields. (authors)

Improved image quality and diagnostic potential using ultra-high-resolution computed tomography of the lung with small scan FOV: A prospective study.

Directory of Open Access Journals (Sweden)

Huiyuan Zhu

Full Text Available The aim of this study was to assess whether CT imaging using an ultra-high-resolution CT (UHRCT scan with a small scan field of view (FOV provides higher image quality and helps to reduce the follow-up period compared with a conventional high-resolution CT (CHRCT scan. We identified patients with at least one pulmonary nodule at our hospital from July 2015 to November 2015. CHRCT and UHRCT scans were conducted in all enrolled patients. Three experienced radiologists evaluated the image quality using a 5-point score and made diagnoses. The paired images were displayed side by side in a random manner and annotations of scan information were removed. The following parameters including image quality, diagnostic confidence of radiologists, follow-up recommendations and diagnostic accuracy were assessed. A total of 52 patients (62 nodules were included in this study. UHRCT scan provides a better image quality regarding the margin of nodules and solid internal component compared to that of CHRCT (P 0.05. These findings suggest that the UHRCT prototype scanner provides a better image quality of subsolid nodules compared to CHRCT and contributes significantly to reduce the patients' follow-up period.

Facile design of ultra-thin anodic aluminum oxide membranes for the fabrication of plasmonic nanoarrays

Science.gov (United States)

Hao, Qi; Huang, Hao; Fan, Xingce; Hou, Xiangyu; Yin, Yin; Li, Wan; Si, Lifang; Nan, Haiyan; Wang, Huaiyu; Mei, Yongfeng; Qiu, Teng; Chu, Paul K.

2017-03-01

Ultra-thin anodic aluminum oxide (AAO) membranes are efficient templates for the fabrication of patterned nanostructures. Herein, a three-step etching method to control the morphology of AAO is described. The morphological evolution of the AAO during phosphoric acid etching is systematically investigated and a nonlinear growth mechanism during unsteady-state anodization is revealed. The thickness of the AAO can be quantitatively controlled from ˜100 nm to several micrometers while maintaining the tunablity of the pore diameter. The AAO membranes are robust and readily transferable to different types of substrates to prepare patterned plasmonic nanoarrays such as nanoislands, nanoclusters, ultra-small nanodots, and core-satellite superstructures. The localized surface plasmon resonance from these nanostructures can be easily tuned by adjusting the morphology of the AAO template. The custom AAO template provides a platform for the fabrication of low-cost and large-scale functional nanoarrays suitable for fundamental studies as well as applications including biochemical sensing, imaging, photocatalysis, and photovoltaics.

Magnetic field induced superconductor-insulator transitions for ultra-thin Bi films on the different underlayers

International Nuclear Information System (INIS)

Makise, K; Kawaguti, T; Shinozaki, B

2009-01-01

This work shows the experimental results of the superconductor-insulator (S-I) transition for ultra-thin Bi films in magnetic fields. The quench-condensed (q-c) Bi film onto insulating underlayers have been interpreted to be homogeneous. In contrast, the Bi film without underlayers has been regarded as a granular film. The electrical transport properties of ultra-thin metal films near the S-I transition depend on the structure of the film. In order to confirm the effect of the underlayer to the homogeneity of the superconducting films, we investigate the characteristics of S-I transitions of q-c nominally homogeneous Bi films on underlayers of two insulating materials, SiO, and Sb. Under almost the same deposition condition except for the material of underlayer, we prepared the Bi films by repeating the additional deposition and performed in-situ electrical measurement. It is found that the transport properties near the S-I transitions show the remarkable difference between two films on different underlayers. As for Bi films on SiO, it turned out that the temperature dependence of resistance per square R sq (T) of the field-tuned transition and the thickness-tuned transition shows similar behavior; it was a thermally activated form. On the other hand, the R sq (T) of Bi films on Sb for thickness-tuned S-I transition showed logarithmic temperature dependence, but that for field-tuned S-I transition showed a thermally activated form.

A high-quality narrow passband filter for elastic SV waves via aligned parallel separated thin polymethylmethacrylate plates

OpenAIRE

Jun Zhang; Yaolu Liu; Wensheng Yan; Ning Hu

2017-01-01

We designed a high-quality filter that consists of aligned parallel polymethylmethacrylate (PMMA) thin plates with small gaps for elastic SV waves propagate in metals. Both the theoretical model and the full numerical simulation show the transmission spectrum of the elastic SV waves through such a filter has several sharp peaks with flawless transmission within the investigated frequencies. These peaks can be readily tuned by manipulating the geometry parameters of the PMMA plates. Our invest...

Ultra-high Q terahertz whispering-gallery modes in a silicon resonator

Science.gov (United States)

Vogt, Dominik Walter; Leonhardt, Rainer

2018-05-01

We report on the first experimental demonstration of terahertz (THz) whispering-gallery modes (WGMs) with an ultra-high quality factor of 1.5 × 104 at 0.62 THz. The WGMs are observed in a high resistivity float zone silicon spherical resonator coupled to a sub-wavelength silica waveguide. A detailed analysis of the coherent continuous wave THz spectroscopy measurements combined with a numerical model based on Mie-Debye-Aden-Kerker theory allows us to unambiguously identify the observed higher order radial THz WGMs.

Planar ultra thin glass seals with optical fiber interface for monitoring tamper attacks on security eminent components

Science.gov (United States)

Thiel, M.; Flachenecker, G.; Schade, W.; Gorecki, C.; Thoma, A.; Rathje, R.

2017-11-01

Optical seals consisting of waveguide Bragg grating sensor structures in ultra thin glass transparencies have been developed to cover security relevant objects for detection of unauthorized access. For generation of optical signature in the seals, femtosecond laser pulses were used. The optical seals were connected with an optical fiber to enable external read out of the seal. Different attack scenarios for getting undetected access to the object, covered by the seal, were proven and evaluated. The results presented here, verify a very high level of security. An unauthorized detaching and subsequent replacement by original or copy of the seals for tampering would be accompanied with a very high technological effort, posing a substantial barrier towards an attacker. Additionally, environmental influences like temperature effects have a strong but reproducible influence on signature, which in context of a temperature reference database increases the level of security significantly.

Nanostructured thin film coatings with different strengthening effects

Directory of Open Access Journals (Sweden)

Panfilov Yury

2017-01-01

Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

Ultra-high resolution protein crystallography

International Nuclear Information System (INIS)

Takeda, Kazuki; Hirano, Yu; Miki, Kunio

2010-01-01

Many protein structures have been determined by X-ray crystallography and deposited with the Protein Data Bank. However, these structures at usual resolution (1.5< d<3.0 A) are insufficient in their precision and quantity for elucidating the molecular mechanism of protein functions directly from structural information. Several studies at ultra-high resolution (d<0.8 A) have been performed with synchrotron radiation in the last decade. The highest resolution of the protein crystals was achieved at 0.54 A resolution for a small protein, crambin. In such high resolution crystals, almost all of hydrogen atoms of proteins and some hydrogen atoms of bound water molecules are experimentally observed. In addition, outer-shell electrons of proteins can be analyzed by the multipole refinement procedure. However, the influence of X-rays should be precisely estimated in order to derive meaningful information from the crystallographic results. In this review, we summarize refinement procedures, current status and perspectives for ultra high resolution protein crystallography. (author)

Trade-off between Photon Management Efficacy and Material Quality in Thin-Film Solar Cells on Nanostructured Substrates of High Aspect Ratio Structures

Directory of Open Access Journals (Sweden)

Alan H. Chin

2018-04-01

Full Text Available Although texturing of the transparent electrode of thin-film solar cells has long been used to enhance light absorption via light trapping, such texturing has involved low aspect ratio features. With the recent development of nanotechnology, nanostructured substrates enable improved light trapping and enhanced optical absorption via resonances, a process known as photon management, in thin-film solar cells. Despite the progress made in the development of photon management in thin-film solar cells using nanostructures substrates, the structural integrity of the thin-film solar cells deposited onto such nanostructured substrates is rarely considered. Here, we report the observation of the reduction in the open circuit voltage of amorphous silicon solar cells deposited onto a nanostructured substrate with increasing areal number density of high aspect ratio structures. For a nanostructured substrate with the areal number density of such nanostructures increasing in correlation with the distance from one edge of the substrate, a correlation between the open circuit voltage reduction and the increase of the areal number density of high aspect ratio nanostructures of the front electrode of the small-size amorphous silicon solar cells deposited onto different regions of the substrate with graded nanostructure density indicates the effect of the surface morphology on the material quality, i.e., a trade-off between photon management efficacy and material quality. This observed trade-off highlights the importance of optimizing the morphology of the nanostructured substrate to ensure conformal deposition of the thin-film solar cell.

Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system/development of technology to manufacture thin film solar cells (development of technology to manufacture materials and substrates (development of technology to manufacture high-quality amorphous materials and substrates)); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, zairyo kiban seizo gijutsu kaihatsu (kohinshitsu amorphous kei zairyo kiban no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

These technological developments are intended to develop technologies to manufacture with improved quality the silicon-based thin film solar cells. In order to analyze manufacturing conditions for micro crystal silicon thin films as the narrow-gap amorphous silicon-based films, films were manufactured in the vicinity of borders of amorphous/micro crystal silicon film manufacturing conditions. The present film manufacturing did not present effects of suppressing deterioration of hydrogen diluted light. In order to elucidate the light deterioration mechanism in hydrogenated amorphous silicon films and study the suppression thereof, discussions were given on impurities in the film, including oxygen. By using an ultra high vacuum plasma CVD having a thoroughgoing baking system, an oil-free exhaust mechanism, and a raw material gas refining mechanism, impurities were added to and removed from a reaction vessel, and an ultra-high purity Si:H film was manufactured, which has been removed of impurities from the raw material gas, resulting in reduction of O, C and N standing no comparison. According to the result of a light irradiation experiment on an ultra-high purity film obtained under an accelerated deteriorating condition by using a pulse laser, the model assuming the light induced defect and the pair of impure atoms has been denied. (NEDO)

Processed and ultra-processed foods are associated with lower-quality nutrient profiles in children from Colombia.

Science.gov (United States)

Cornwell, Brittany; Villamor, Eduardo; Mora-Plazas, Mercedes; Marin, Constanza; Monteiro, Carlos A; Baylin, Ana

2018-01-01

To determine if processed and ultra-processed foods consumed by children in Colombia are associated with lower-quality nutrition profiles than less processed foods. We obtained information on sociodemographic and anthropometric variables and dietary information through dietary records and 24 h recalls from a convenience sample of the Bogotá School Children Cohort. Foods were classified into three categories: (i) unprocessed and minimally processed foods, (ii) processed culinary ingredients and (iii) processed and ultra-processed foods. We also examined the combination of unprocessed foods and processed culinary ingredients. Representative sample of children from low- to middle-income families in Bogotá, Colombia. Children aged 5-12 years in 2011 Bogotá School Children Cohort. We found that processed and ultra-processed foods are of lower dietary quality in general. Nutrients that were lower in processed and ultra-processed foods following adjustment for total energy intake included: n-3 PUFA, vitamins A, B12, C and E, Ca and Zn. Nutrients that were higher in energy-adjusted processed and ultra-processed foods compared with unprocessed foods included: Na, sugar and trans-fatty acids, although we also found that some healthy nutrients, including folate and Fe, were higher in processed and ultra-processed foods compared with unprocessed and minimally processed foods. Processed and ultra-processed foods generally have unhealthy nutrition profiles. Our findings suggest the categorization of foods based on processing characteristics is promising for understanding the influence of food processing on children's dietary quality. More studies accounting for the type and degree of food processing are needed.

Effect of anionic dopants on thickness, morphology and electrical properties of polypyrrole ultra-thin films prepared by in situ chemical polymerization

Energy Technology Data Exchange (ETDEWEB)

Mahmoodian, Mehrnoosh [Dep. of Polymer Engineering, Nanostructured Materials Research Center, Sahand University of Technology, Tabriz 51335-1996 (Iran, Islamic Republic of); Pourabbas, Behzad, E-mail: pourabas@sut.ac.ir [Dep. of Polymer Engineering, Nanostructured Materials Research Center, Sahand University of Technology, Tabriz 51335-1996 (Iran, Islamic Republic of); Mohajerzadeh, Shams [Nano-Electronics and Thin Film Lab, School of Electrical and Computer Engineering, University of Tehran, P.O. Box 14395/515, Tehran (Iran, Islamic Republic of)

2015-05-29

The effect of different dopant anions on deposition and characteristics of polypyrrole (PPy) thin film has been studied in this work. Ultra-thin films of conducting PPy were deposited on insulating surfaces of glass and oxidized silicon wafer by in situ chemical polymerization in the presence of different anionic dopants including sodium dodecylbenzenesulfonate, sodium dodecyl sulfate, α-naphthalene sulfonic acid, anthraquinone-2-sulfonic acid sodium salt monohydrate/5-sulfosalicylic acid dehydrate, and camphor sulfonic acid. Hydrophilic/hydrophobic properties and morphology of the self-assembled monolayer of N-(3-trimethoxysilylpropyl)pyrrole, the surface modifying agent in this work, and PPy thin films were characterized before and after deposition by contact angle measurements, field emission scanning electron microscopy, and atomic force microscopy. Chemical structure, thickness, and conductivity of the thin films were also studied by attenuated total reflectance Fourier transform infrared spectrometer, ellipsometry, and four-point probe measurements. The results showed deposition of thin films of conducting PPy with comparable thickness in the range of 6-31 nm and different morphologies, uniformity, and smoothness with average roughness in the range of 0.3-6 nm and relatively high range of conductivity on the modified surfaces. - Highlights: • Conducting thin films of polypyrrole were deposited on glass and SiO{sub 2} substrates. • Surface modification using pyrrole-silane was employed prior to polymerization. • Films as thin as ≈ 7 nm were deposited using different surfactant/counter ions. • Chemistry of the counter ion affects thickness, conductivity and morphology. • Lower thickness/higher conductivity were obtained by structurally flexible dopants.

Screening bioactive quality control markers of QiShenYiQi dripping pills based on the relationship between the ultra-high performance liquid chromatography fingerprint and vascular protective activity.

Science.gov (United States)

Zhuo, Limeng; Peng, Jingjing; Zhao, Yunli; Li, Dongxiang; Xie, Xiuman; Tong, Ling; Yu, Zhiguo

2017-10-01

Traditional Chinese medicine consists of complex phytochemical constituents. Selecting appropriate analytical markers of traditional Chinese medicine is a critical step in quality control. Currently, the combination of fingerprinting and efficacy evaluation is considered as a useful method for screening active ingredients in complex mixtures. This study was designed to develop an orthogonal partial least squares model for screening bioactive quality control markers of QishenYiqi dripping pills based on the fingerprint-efficacy relationship. First, the chemical fingerprints of 49 batches of QishenYiqi dripping pill samples were established by ultra-high performance liquid chromatography coupled with a photodiode array detector. Second, ultra-high performance liquid chromatography coupled with quadrupole-time-of-flight mass spectrometry was exploited to systematically investigate the 36 copossessing fingerprint components in QishenYiqi dripping pills. The vascular protective activity of QishenYiqi dripping pills was determined by using a cell counting kit-8 assay. Finally, fingerprint-efficacy relationship was established by orthogonal partial least squares model. The results indicated that ten components exhibited strong correlation with vascular protective activity, and these were preliminarily screened as quality control markers. The present study provided a novel idea for the study of the pharmacodynamic material basis and quality evaluation of QishenYiqi dripping pills. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low velocity impact behaviour of ultra high strength concrete panels

Indian Academy of Sciences (India)

Ultra high strength concrete; panel; drop weight test; impact analysis;. ABAQUS. 1. Introduction. Ultra high strength concrete ... Knight (2012) investigated the dynamic behaviour of steel fibre reinforced concrete plates under impact loading with ...

Ultra-Thin Coatings Beautify Art

Science.gov (United States)

2013-01-01

The craftsmen in the Roman Empire who constructed the Lycurgus Cup 17 centuries ago probably didn't think their artifact would survive for nearly 2,000 years as a prized possession. And they certainly couldn't have known that the technology they used to make it would eventually become an important part of space exploration. Carved from one solid mass, the cup is one of the few complete glass objects from that period, and the only one made from dichroic glass. Meaning "two-colored" in Greek, dichroic glass was originally created by adding trace amounts of gold and silver to a large volume of glass melt. The resulting medium partially reflects the light passing through it, causing an observer to see different colors depending on the direction of the light source. The Lycurgus Cup, for example, is famous for appearing green in daylight and red when lit at night, symbolic of the ripening grapes used to fill it with wine. NASA revitalized the production of dichroic glass in the 1950s and 1960s as a means of protecting its astronauts. Ordinary clear substances cannot protect human vision from the harsh rays of unfiltered sunlight, and everything from the human body to spacecraft sensors and computers are at risk if left unprotected from the radiation that permeates space. The microscopic amounts of metal present in dichroic glass make it an effective barrier against such harmful radiation. While the ancient manufacturing technique called for adding metals to glass melt, NASA developed a process in which metals are vaporized by electron beams in a vacuum chamber and then applied directly to surfaces in an ultra-thin film. The vapor condenses in the form of crystal structures, and the process is repeated for up to several dozen coatings. The resulting material, still only about 30 millionths of an inch thick, is sufficient to reflect radiation even while the glass, or polycarbonate, as in the case of space suit helmets, remains transparent to the human eye.

Comment on 'Extrinsic versus intrinsic ferroelectric switching: experimental investigations using ultra-thin PVDF Langmuir-Blodgett films'

International Nuclear Information System (INIS)

Naber, R C G; Blom, P W M; Leeuw, D M de

2006-01-01

Previous work on ultra-thin P(VDF-TrFE) Langmuir-Blodgett films has indicated a transition from extrinsic to intrinsic ferroelectric switching. The lack of several key features of intrinsic switching in the experimental work reported by Kliem et al argues against intrinsic switching. In this Comment we discuss two published papers and new experimental results that support a lack of intrinsic switching and point to the conclusion that the thickness dependence of the Langmuir-Blodgett films is due to the influence of the electrode interfaces. (comment)

Improved image quality and diagnostic potential using ultra-high-resolution computed tomography of the lung with small scan FOV: A prospective study.

Science.gov (United States)

Zhu, Huiyuan; Zhang, Lian; Wang, Yali; Hamal, Preeti; You, Xiaofang; Mao, Haixia; Li, Fei; Sun, Xiwen

2017-01-01

The aim of this study was to assess whether CT imaging using an ultra-high-resolution CT (UHRCT) scan with a small scan field of view (FOV) provides higher image quality and helps to reduce the follow-up period compared with a conventional high-resolution CT (CHRCT) scan. We identified patients with at least one pulmonary nodule at our hospital from July 2015 to November 2015. CHRCT and UHRCT scans were conducted in all enrolled patients. Three experienced radiologists evaluated the image quality using a 5-point score and made diagnoses. The paired images were displayed side by side in a random manner and annotations of scan information were removed. The following parameters including image quality, diagnostic confidence of radiologists, follow-up recommendations and diagnostic accuracy were assessed. A total of 52 patients (62 nodules) were included in this study. UHRCT scan provides a better image quality regarding the margin of nodules and solid internal component compared to that of CHRCT (P images than of CHRCT images (Pimages (P 0.05). These findings suggest that the UHRCT prototype scanner provides a better image quality of subsolid nodules compared to CHRCT and contributes significantly to reduce the patients' follow-up period.

Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

Science.gov (United States)

Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

2016-05-04

Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

Ultra-thin, conformal, and hydratable color-absorbers using silk protein hydrogel

Science.gov (United States)

Umar, Muhammad; Min, Kyungtaek; Jo, Minsik; Kim, Sunghwan

2018-06-01

Planar and multilayered photonic devices offer unprecedented opportunities in biological and chemical sensing due to strong light-matter interactions. However, uses of rigid substances such as semiconductors and dielectrics confront photonic devices with issues of biocompatibility and a mechanical mismatch for their application on humid, uneven, and soft biological surfaces. Here, we report that favorable material traits of natural silk protein led to the fabrication of an ultra-thin, conformal, and water-permeable (hydratable) metal-insulator-metal (MIM) color absorber that was mapped on soft, curved, and hydrated biological interfaces. Strong absorption was induced in the MIM structure and could be tuned by hydration and tilting of the sample. The transferred MIM color absorbers reached the exhibition of a very strong resonant absorption in the visible and near infra-red ranges. In addition, we demonstrated that the conformal resonator could function as a refractometric glucose sensor applied on a contact lens.

Improving the surface structure of high quality Sr{sub 2}FeMoO{sub 6} thin films for multilayer structures

Energy Technology Data Exchange (ETDEWEB)

Angervo, I., E-mail: ijange@utu.fi [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); University of Turku Graduate School (UTUGS), University of Turku, FI-20014 Turku (Finland); Saloaro, M. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); Tikkanen, J. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); University of Turku Graduate School (UTUGS), University of Turku, FI-20014 Turku (Finland); Huhtinen, H.; Paturi, P. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland)

2017-02-28

Highlights: • The effects of PLD laser fluence and deposition temperature are investigated on SFMO thin films. • We focus on improving the surface structure of the SFMO thin films. • Both the surface structure and the Curie temperature can be improved by fabricating the films at 900 °C. - Abstract: Two sets of Sr{sub 2}FeMoO{sub 6} thin films were prepared with pulsed laser deposition and the effect of the laser fluence and the deposition temperature was investigated. The Sr{sub 2}FeMoO{sub 6} thin films showed clear evidence of impurity phases when the laser fluence was altered. Phase pure films resulted through the whole temperature range between 900 °C and 1050 °C when a proper laser fluence was used. Films fabricated at lower deposition temperatures resulted with smaller surface roughnesses around 5 nm, higher Curie temperatures and with relatively high saturation magnetization values. The Curie temperature was determined from the minimum of the first order derivative and results showed the highest values of 350 K and above. The films with the highest Curie temperature reached zero magnetization above 400 K. The results indicate that both high microstructural and high magnetic quality Sr{sub 2}FeMoO{sub 6} thin films can be obtained with a deposition temperature between 900 °C and 950 °C. This provides better fabrication parameters for the upcoming SFMO multilayer structures.

Thin liquid sheet target capabilities for ultra-intense laser acceleration of ions at a kHz repetition rate

Science.gov (United States)

Klim, Adam; Morrison, J.; Orban, C.; Chowdhury, E.; Frische, K.; Feister, S.; Roquemore, M.

2017-10-01

The success of laser-accelerated ion experiments depends crucially on a number of factors including how thin the targets can be created. We present experimental results demonstrating extremely thin (under 200 nm) glycol sheet targets that can be used for ultra-intense laser-accelerated ion experiments conducted at the Air Force Research Laboratory at Wright-Patterson Air Force Base. Importantly, these experiments operate at a kHz repetition rate and the recovery time of the liquid targets is fast enough to allow the laser to interact with a refreshed, thin target on every shot. These thin targets can be used to produce energetic electrons, light ions, and neutrons as well as x-rays, we present results from liquid glycol targets which are useful for proton acceleration experiments via the mechanism of Target Normal Sheath Acceleration (TNSA). In future work, we will create thin sheets from deuterated water in order to perform laser-accelerated deuteron experiments. This research was sponsored by the Quantum and Non-Equilibrium Processes Division of the AFOSR, under the management of Dr. Enrique Parra, and support from the DOD HPCMP Internship Program.

Radiobiological response to ultra-short pulsed megavoltage electron beams of ultra-high pulse dose rate.

Science.gov (United States)

Beyreuther, Elke; Karsch, Leonhard; Laschinsky, Lydia; Leßmann, Elisabeth; Naumburger, Doreen; Oppelt, Melanie; Richter, Christian; Schürer, Michael; Woithe, Julia; Pawelke, Jörg

2015-08-01

In line with the long-term aim of establishing the laser-based particle acceleration for future medical application, the radiobiological consequences of the typical ultra-short pulses and ultra-high pulse dose rate can be investigated with electron delivery. The radiation source ELBE (Electron Linac for beams with high Brilliance and low Emittance) was used to mimic the quasi-continuous electron beam of a clinical linear accelerator (LINAC) for comparison with electron pulses at the ultra-high pulse dose rate of 10(10) Gy min(-1) either at the low frequency of a laser accelerator or at 13 MHz avoiding effects of prolonged dose delivery. The impact of pulse structure was analyzed by clonogenic survival assay and by the number of residual DNA double-strand breaks remaining 24 h after irradiation of two human squamous cell carcinoma lines of differing radiosensitivity. The radiation response of both cell lines was found to be independent from electron pulse structure for the two endpoints under investigation. The results reveal, that ultra-high pulse dose rates of 10(10) Gy min(-1) and the low repetition rate of laser accelerated electrons have no statistically significant influence (within the 95% confidence intervals) on the radiobiological effectiveness of megavoltage electrons.

Electronic structures of ultra-thin silicon carbides deposited on graphite

International Nuclear Information System (INIS)

Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

2004-01-01

Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

International Nuclear Information System (INIS)

Chauhan, Lalit; Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A.; Hughes, G.

2015-01-01

The effect of inserting ultra-thin atomic layer deposited Al 2 O 3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al 2 O 3 /p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al 2 O 3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al 2 O 3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al 2 O 3 /n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface

Growth of ultra-thin Ag films on Ni(111)

Energy Technology Data Exchange (ETDEWEB)

Meyer, Axel; Flege, Jan Ingo; Falta, Jens [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany); Senanayake, Sanjaya [Chemistry Department, Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Alamgir, Faisal [Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)

2009-07-01

The physical and chemical properties of ultra-thin metal films on metallic substrates strongly depend on their morphology and the structure of the buried interface. Hence, detailed knowledge of the growth mechanisms is essential for the creation of new functional materials with novel characteristics. In this contribution, we present a comprehensive structural study of the growth and properties of epitaxial Ag films on Ni(111) by in-situ low energy electron microscopy (LEEM). For lower temperatures, the growth of the Ag film proceeds in a Stranski-Krastanov mode after completion of the wetting layer, while for higher temperatures layer-by-layer growth is observed. Quantitative information about the film structure were obtained by analyzing the intensity-voltage (I-V) dependence of the local electron reflectivity (IV-LEEM). The corresponding I(V) spectra showed intensity oscillations depending on local thickness of the Ag film due to the quantum size effect (QSE). Modeling of the I(V) spectra was performed both within the framework of a one-dimensional Kronig-Penney model and multiple scattering IV-LEED calculations. The results of both approaches concerning the variation of the layer spacings and interface characteristics for different temperatures and film thicknesses will be discussed.

Solid-State Densification of Spun-Cast Self-Assembled Monolayers for Use in Ultra-Thin Hybrid Dielectrics.

Science.gov (United States)

Hutchins, Daniel O; Acton, Orb; Weidner, Tobias; Cernetic, Nathan; Baio, Joe E; Castner, David G; Ma, Hong; Jen, Alex K-Y

2012-11-15

Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlO x (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7×10 -8 A cm -2 and capacitance density of 0.62 µF cm -2 at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to 1.1 cm 2 V -1 s -1 .

Application of Thinned-Skull Cranial Window to Mouse Cerebral Blood Flow Imaging Using Optical Microangiography

Science.gov (United States)

Wang, Ruikang K.

2014-01-01

In vivo imaging of mouse brain vasculature typically requires applying skull window opening techniques: open-skull cranial window or thinned-skull cranial window. We report non-invasive 3D in vivo cerebral blood flow imaging of C57/BL mouse by the use of ultra-high sensitive optical microangiography (UHS-OMAG) and Doppler optical microangiography (DOMAG) techniques to evaluate two cranial window types based on their procedures and ability to visualize surface pial vessel dynamics. Application of the thinned-skull technique is found to be effective in achieving high quality images for pial vessels for short-term imaging, and has advantages over the open-skull technique in available imaging area, surgical efficiency, and cerebral environment preservation. In summary, thinned-skull cranial window serves as a promising tool in studying hemodynamics in pial microvasculature using OMAG or other OCT blood flow imaging modalities. PMID:25426632

Stepwise crystallization and the layered distribution in crystallization kinetics of ultra-thin poly(ethylene terephthalate) film

Energy Technology Data Exchange (ETDEWEB)

Zuo, Biao, E-mail: chemizuo@zstu.edu.cn, E-mail: wxinping@yahoo.com; Xu, Jianquan; Sun, Shuzheng; Liu, Yue; Yang, Juping; Zhang, Li; Wang, Xinping, E-mail: chemizuo@zstu.edu.cn, E-mail: wxinping@yahoo.com [Department of Chemistry, Key Laboratory of Advanced Textile Materials and Manufacturing Technology of the Education Ministry, Zhejiang Sci-Tech University, Hangzhou 310018 (China)

2016-06-21

Crystallization is an important property of polymeric materials. In conventional viewpoint, the transformation of disordered chains into crystals is usually a spatially homogeneous process (i.e., it occurs simultaneously throughout the sample), that is, the crystallization rate at each local position within the sample is almost the same. Here, we show that crystallization of ultra-thin poly(ethylene terephthalate) (PET) films can occur in the heterogeneous way, exhibiting a stepwise crystallization process. We found that the layered distribution of glass transition dynamics of thin film modifies the corresponding crystallization behavior, giving rise to the layered distribution of the crystallization kinetics of PET films, with an 11-nm-thick surface layer having faster crystallization rate and the underlying layer showing bulk-like behavior. The layered distribution in crystallization kinetics results in a particular stepwise crystallization behavior during heating the sample, with the two cold-crystallization temperatures separated by up to 20 K. Meanwhile, interfacial interaction is crucial for the occurrence of the heterogeneous crystallization, as the thin film crystallizes simultaneously if the interfacial interaction is relatively strong. We anticipate that this mechanism of stepwise crystallization of thin polymeric films will allow new insight into the chain organization in confined environments and permit independent manipulation of localized properties of nanomaterials.

Fabrication and stability investigation of ultra-thin transparent and flexible Cu-Ag-Au tri-layer film on PET

Science.gov (United States)

Prakasarao, Ch Surya; D'souza, Slavia Deeksha; Hazarika, Pratim; Karthiselva N., S.; Ramesh Babu, R.; Kovendhan, M.; Kumar, R. Arockia; Joseph, D. Paul

2018-04-01

The need for transparent conducting electrodes with high transmittance, low sheet resistance and flexibility to replace Indium Tin Oxide is ever growing. We have deposited and studied the performance of ultra-thin Cu-Ag-Au tri-layer films over a flexible poly-ethylene terephthalate substrate. Scotch tape test showed good adhesion of the metallic film. Transmittance of the tri-layer was around 40 % in visible region. Optical profiler measurements were done to study the surface features. The XRD pattern revealed that film was amorphous. Sheet resistance measured by four probe technique was around 7.7 Ohm/Δ and was stable up to 423 K. The transport parameters by Hall effect showed high conductivity and carrier concentration with a mobility of 5.58 cm2/Vs. Tests performed in an indigenously designed bending unit indicated the films to be stable both mechanically and electrically even after 50,000 bending cycles.

Flexible Mixed-Potential-Type (MPT) NO₂ Sensor Based on An Ultra-Thin Ceramic Film.

Science.gov (United States)

You, Rui; Jing, Gaoshan; Yu, Hongyan; Cui, Tianhong

2017-07-29

A novel flexible mixed-potential-type (MPT) sensor was designed and fabricated for NO₂ detection from 0 to 500 ppm at 200 °C. An ultra-thin Y₂O₃-doped ZrO₂ (YSZ) ceramic film 20 µm thick was sandwiched between a heating electrode and reference/sensing electrodes. The heating electrode was fabricated by a conventional lift-off process, while the porous reference and the sensing electrodes were fabricated by a two-step patterning method using shadow masks. The sensor's sensitivity is achieved as 58.4 mV/decade at the working temperature of 200 °C, as well as a detection limit of 26.7 ppm and small response time of less than 10 s at 200 ppm. Additionally, the flexible MPT sensor demonstrates superior mechanical stability after bending over 50 times due to the mechanical stability of the YSZ ceramic film. This simply structured, but highly reliable flexible MPT NO₂ sensor may lead to wide application in the automobile industry for vehicle emission systems to reduce NO₂ emissions and improve fuel efficiency.

Self-cleaning effect in high quality percussion ablating of cooling hole by picosecond ultra-short pulse laser

Science.gov (United States)

Zhao, Wanqin; Yu, Zhishui

2018-06-01

Comparing with the trepanning technology, cooling hole could be processed based on the percussion drilling with higher processing efficiency. However, it is widely believed that the ablating precision of hole is lower for percussion drilling than for trepanning, wherein, the melting spatter materials around the hole surface and the recast layer inside the hole are the two main issues for reducing the ablating precision of hole, especially for the recast layer, it can't be eliminated completely even through the trepanning technology. In this paper, the self-cleaning effect which is a particular property just for percussion ablating of holes has been presented in detail. In addition, the reasons inducing the self-cleaning effect have been discussed. At last, based on the self-cleaning effect of percussion drilling, high quality cooling hole without the melting spatter materials around the hole surface and recast layer inside the hole could be ablated in nickel-based superalloy by picosecond ultra-short pulse laser.

A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers.

Science.gov (United States)

Xu, Man; Wachters, Arthur J H; van Deelen, Joop; Mourad, Maurice C D; Buskens, Pascal J P

2014-03-10

We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with its layer thickness due to interference effects. Ergo, high precision is required in the CIGS production process, especially when using ultra-thin absorber layers, to accurately realize the required thickness of the ZnO, cadmium sulfide (CdS) and CIGS layer. We show that patterning the ZnO window layer can strongly suppress these interference effects allowing a higher tolerance in the production process.

New solid laser: Ceramic laser. From ultra stable laser to ultra high output laser

International Nuclear Information System (INIS)

Ueda, Kenichi

2006-01-01

An epoch-making solid laser is developed. It is ceramic laser, polycrystal, which is produced as same as glass and shows ultra high output. Ti 3+ :Al 2 O 3 laser crystal and the CPA (chirped pulse amplification) technique realized new ultra high output lasers. Japan has developed various kinds of ceramic lasers, from 10 -2 to 67 x 10 3 w average output, since 1995. These ceramic lasers were studied by gravitational radiation astronomy. The scattering coefficient of ceramic laser is smaller than single crystals. The new fast ignition method is proposed by Institute of Laser Engineering of Osaka University, Japan. Ultra-intense short pulse laser can inject the required energy to the high-density imploded core plasma within the core disassembling time. Ti 3+ :Al 2 O 3 crystal for laser, ceramic YAG of large caliber for 100 kW, transparent laser ceramic from nano-crystals, crystal grain and boundary layer between grains, the scattering coefficient of single crystal and ceramic, and the derived release cross section of Yb:YAG ceramic are described. (S.Y.)

Ultra-high wear resistance of ultra-nanocrystalline diamond film: Correlation with microstructure and morphology

Science.gov (United States)

Rani, R.; Kumar, N.; Lin, I.-Nan

2016-05-01

Nanostructured diamond films are having numerous unique properties including superior tribological behavior which is promising for enhancing energy efficiency and life time of the sliding devices. High wear resistance is the principal criterion for the smooth functioning of any sliding device. Such properties are achievable by tailoring the grain size and grain boundary volume fraction in nanodiamond film. Ultra-nanocrystalline diamond (UNCD) film was attainable using optimized gas plasma condition in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. Crystalline phase of ultra-nanodiamond grains with matrix phase of amorphous carbon and short range ordered graphite are encapsulated in nanowire shaped morphology. Film showed ultra-high wear resistance and frictional stability in micro-tribological contact conditions. The negligible wear of film at the beginning of the tribological contact was later transformed into the wearless regime for prolonged sliding cycles. Both surface roughness and high contact stress were the main reasons of wear at the beginning of sliding cycles. However, the interface gets smoothened due to continuous sliding, finally leaded to the wearless regime.

Ultra-Thin Optically Transparent Carbon Electrodes Produced from Layers of Adsorbed Proteins

Science.gov (United States)

Alharthi, Sarah A.; Benavidez, Tomas E.; Garcia, Carlos D.

2013-01-01

This work describes a simple, versatile, and inexpensive procedure to prepare optically transparent carbon electrodes, using proteins as precursors. Upon adsorption, the protein-coated substrates were pyrolyzed under reductive conditions (5% H2) to form ultra-thin, conductive electrodes. Because proteins spontaneously adsorb to interfaces forming uniform layers, the proposed method does not require a precise control of the preparation conditions, specialized instrumentation, or expensive precursors. The resulting electrodes were characterized by a combination of electrochemical, optical, and spectroscopic means. As a proof-of-concept, the optically-transparent electrodes were also used as substrate for the development of an electrochemical glucose biosensor. The proposed films represent a convenient alternative to more sophisticated, and less available, carbon-based nanomaterials. Furthermore, these films could be formed on a variety of substrates, without classical limitations of size or shape. PMID:23421732

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

Science.gov (United States)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

International Nuclear Information System (INIS)

Xu, S.C.; Yang, C.; Liu, M.; Jiang, S.Z.; Ma, Y.Y.; Chen, C.S.; Gao, X.G.; Sun, Z.C.; Hu, B.; Wang, C.C.; Man, B.Y.

2012-01-01

High quality β-FeSi 2 thin films have been fabricated on silicon (100) substrate by the pulsed laser deposition (PLD) technique with the Fe and sintered FeSi 2 targets. The crystalline quality and surface morphology of the samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. These results indicate that the samples prepared with a Fe target can acquire a better crystalline quality and a smoother surface than those with a sintered FeSi 2 target. The reasons were discussed with subsurface superheating mechanism. The intrinsic PL spectrum attributed to the interband transition of β-FeSi 2 for all the samples was compared, showing that the film prepared with Fe target can acquire a good PL property by optimizing experimental parameters. It is suggested that sputtering Fe on Si substrate by the pulsed laser offers a cheap and convenient way to prepare the β-FeSi 2 thin films. -- Highlights: ► β-FeSi 2 films were fabricated by PLD technique with the Fe and FeSi 2 targets. ► The films prepared with Fe target have good crystalline quality and smooth surface. ► The Fe target prepared film acquired a high PL intensity. ► Sputtering Fe on Si substrate offers a convenient way to prepare the β-FeSi 2 films.

Design of a thin-plate based tunable high-quality narrow passband filter for elastic transverse waves propagate in metals

Science.gov (United States)

Zhang, J.; Zeng, L. H.; Hu, C. L.; Yan, W. S.; Pennec, Yan; Hu, N.

2018-03-01

For the elastic SV (transverse) waves in metals, a high-quality narrow passband filter that consists of aligned parallel thin plates with small gaps is designed. In order to obtain a good performance, the thin plates should be constituted by materials with a smaller mass density and Young's modulus, such as polymethylmethacrylate (PMMA), compared to the embedded materials in which the elastic SV waves propagate. Both the theoretical model and the full numerical simulation show that the transmission spectrum of the designed filter demonstrates several peaks with flawless transmission within 0 KHz ˜20 KHz frequency range. The peaks can be readily tuned by manipulating the geometrical parameters of the plates. Therefore, the current design works well for both low and high frequencies with a controllable size. Even for low frequencies on the order of kilohertz, the size of this filter can be still limited to the order of centimeters, which significantly benefits the real applications. The investigation also finds that the same filter is valid when using different metals and the reason behind this is explained theoretically. Additionally, the effect of bonding conditions of interfaces between thin plates and the base material is investigated using a spring model.

Ultra-low fouling and high antibody loading zwitterionic hydrogel coatings for sensing and detection in complex media.

Science.gov (United States)

Chou, Ying-Nien; Sun, Fang; Hung, Hsiang-Chieh; Jain, Priyesh; Sinclair, Andrew; Zhang, Peng; Bai, Tao; Chang, Yung; Wen, Ten-Chin; Yu, Qiuming; Jiang, Shaoyi

2016-08-01

For surface-based diagnostic devices to achieve reliable biomarker detection in complex media such as blood, preventing nonspecific protein adsorption and incorporating high loading of biorecognition elements are paramount. In this work, a novel method to produce nonfouling zwitterionic hydrogel coatings was developed to achieve these goals. Poly(carboxybetaine acrylamide) (pCBAA) hydrogel thin films (CBHTFs) prepared with a carboxybetaine diacrylamide crosslinker (CBAAX) were coated on gold and silicon dioxide surfaces via a simple spin coating process. The thickness of CBHTFs could be precisely controlled between 15 and 150nm by varying the crosslinker concentration, and the films demonstrated excellent long-term stability. Protein adsorption from undiluted human blood serum onto the CBHTFs was measured with surface plasmon resonance (SPR). Hydrogel thin films greater than 20nm exhibited ultra-low fouling (crosslinked, purely zwitterionic, carboxybetaine thin film hydrogel (CBHTF) coating platform. The CBHTF on a hydrophilic surface demonstrated long-term stability. By varying the crosslinker content in the spin-coated hydrogel solution, the thickness of CBHTFs could be precisely controlled. Optimized CBHTFs exhibited ultra-low nonspecific protein adsorption below 5ng/cm(2) measured by a surface plasmon resonance (SPR) sensor, and their 3D architecture allowed antibody loading to reach 693ng/cm(2). This strategy provides a facile method to modify SPR biosensor chips with an advanced nonfouling material, and can be potentially expanded to a variety of implantable medical devices and diagnostic biosensors. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations

International Nuclear Information System (INIS)

Frammelsberger, Werner; Benstetter, Guenther; Stamp, Richard; Kiely, Janice; Schweinboeck, Thomas

2005-01-01

As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage-current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler-Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5-1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed

Expectations for ultra-high energy interactions

International Nuclear Information System (INIS)

Feynman, R.P.

1978-01-01

Strong interactions at ultra-high energies are discussed with emphasis on the hadrons produced in high energy collisions. Evidence is considered that quantum chromodynamics might be the right theory, and also some estimates are given of quantum chromodynamics asymptotic-freedom phenomena, the work under discussion being very preliminary. 6 references

Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

International Nuclear Information System (INIS)

Kobayashi, H.; Kim, W. B.; Matsumoto, T.

2011-01-01

We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

A high-quality narrow passband filter for elastic SV waves via aligned parallel separated thin polymethylmethacrylate plates

Directory of Open Access Journals (Sweden)

Jun Zhang

2017-08-01

Full Text Available We designed a high-quality filter that consists of aligned parallel polymethylmethacrylate (PMMA thin plates with small gaps for elastic SV waves propagate in metals. Both the theoretical model and the full numerical simulation show the transmission spectrum of the elastic SV waves through such a filter has several sharp peaks with flawless transmission within the investigated frequencies. These peaks can be readily tuned by manipulating the geometry parameters of the PMMA plates. Our investigation finds that the same filter performs well for different metals where the elastic SV waves propagated.

Structural characterization and comparison of iridium, platinum and gold/palladium ultra-thin film coatings for STM of biomolecules

Energy Technology Data Exchange (ETDEWEB)

Sebring, R.; Arendt, P.; Imai, B.; Bradbury, E.M.; Gatewood, J. [Los Alamos National Lab., NM (United States); Panitz, J. [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Physics and Astronomy; Yau, P. [Univ. of California, Davis, CA (United States)

1997-10-30

Scanning tunneling microscopy (STM) is capable of atomic resolution and is ideally suited for imaging surfaces with uniform work function. A biological sample on a conducting substrate in air does not meet this criteria and requires a conductive coating for stable and reproducible STM imaging. In this paper, the authors describe the STM and transmission electron microscopy (TEM) characterization of ultra-thin ion-beam sputtered films of iridium and cathode sputtered gold/palladium and platinum films on highly ordered pyrolytic graphite (HOPG) which were developed for use as biomolecule coatings. The goals were the development of metal coatings sufficiently thin and fine grained that 15--20 {angstrom} features of biological molecules could be resolved using STM, and the development of a substrate/coating system which would allow complementary TEM information to be obtained for films and biological molecules. The authors demonstrate in this paper that ion-beam sputtered iridium on highly ordered pyrolytic graphite (HOPG) has met both these goals. The ion-beam sputtered iridium produced a very fine grained (< 10 {angstrom}) continuous film at 5--6 {angstrom} thickness suitable for stable air STM imaging. In comparison, cathode sputtered platinum produced 16 {angstrom} grains with the thinnest continuous film at 15 {angstrom} thickness, and the sputtered gold/palladium produced 25 {angstrom} grains with the thinnest continuous film at 18 {angstrom} thickness.

Super Boiler: First Generation, Ultra-High Efficiency Firetube Boiler

Energy Technology Data Exchange (ETDEWEB)

None

2006-06-01

This factsheet describes a research project whose goal is to develop and demonstrate a first-generation ultra-high-efficiency, ultra-low emissions, compact gas-fired package boiler (Super Boiler), and formulate a long-range RD&D plan for advanced boiler technology out to the year 2020.

Inertial fusion with ultra-powerful lasers

International Nuclear Information System (INIS)

Tabak, M.; Hammer, J.; Glinsky, M.; Kruer, W.; Wilks, S.; Woodworth, J.; Campbell, E.M.; Perry, M.D.; Mason, R.

1993-10-01

Ultra-high intensity lasers can be used to ignite ICF capsules with a few tens of kilojoules of light and can lead to high gain with as little as 100 kilojoules of incident laser light. We propose a scheme with three phases. First, a capsule is imploded as in the conventional approach to inertial fusion to assemble a high density fuel configuration. Second, a hole is bored through capsule corona composed of ablated material, pushing critical density close to the high density core of the capsule, by employing the ponderomotive force associated with high intensity laser light. Finally, the fuel is ignited by suprathermal electrons, produced in the high intensity laser plasma interactions, which propagate from critical density to this high density core. This paper reviews two models of energy gain in ICF capsules and explains why ultra-high intensity lasers allow access to the model producing the higher gains. This new scheme also drastically reduces the difficulty of the implosion and thereby allows lower quality fabrication and less stringent beam quality and symmetry requirements from the implosion driver. The difficulty of the fusion scheme is transferred to the technological difficulty of producing the ultra-high-intensity laser and of transporting this energy to the fuel

Ab initio thermodynamics for the growth of ultra-thin Cu film on a perfect Mg O(001) surface

Energy Technology Data Exchange (ETDEWEB)

Zhukovskii, Yuri F. [Institute for Solid State Physics, University of Latvia, Kengaraga str. 8, Riga LV-1063 (Latvia)]. E-mail: quantzh@latnet.lv; Fuks, David [Materials Engineering Department, Ben-Gurion University of the Negev, POB 653, Beer-Sheva IL-84105 (Israel); Kotomin, Eugene A. [Institute for Solid State Physics, University of Latvia, Kengaraga str. 8, Riga LV-1063 (Latvia); Dorfman, Simon [Department of Physics, Israel Institute of Technology-Technion, Haifa IL-32000 (Israel)

2005-12-15

Controlled growth of thin metallic films on oxide substrates is important for numerous micro-and nano electronic applications. Our ab initio study is devoted to the periodic slab simulations for a series of ordered 2a Cu superlattices on the regular Mg O(001) substrate. Submonolayer and monolayer substrate Cu coverages were calculated using the Daft-Gaga method, as implemented into the Crystal-98 code. The results of ab initio calculations have been combined with thermodynamic theory which allows US to predict the growth mode of ultra-thin metal films (spinodal decomposition vs. nucleation-and-growth regime) as a function of the metal coverage and the temperature, and to estimate the metal density in clusters. We show that 3a cluster formation becomes predominant already at low Cu coverages, in agreement with the experiment.

Ab initio thermodynamics for the growth of ultra-thin Cu film on a perfect Mg O(001) surface

International Nuclear Information System (INIS)

Zhukovskii, Yuri F.; Fuks, David; Kotomin, Eugene A.; Dorfman, Simon

2005-01-01

Controlled growth of thin metallic films on oxide substrates is important for numerous micro-and nano electronic applications. Our ab initio study is devoted to the periodic slab simulations for a series of ordered 2a Cu superlattices on the regular Mg O(001) substrate. Submonolayer and monolayer substrate Cu coverages were calculated using the Daft-Gaga method, as implemented into the Crystal-98 code. The results of ab initio calculations have been combined with thermodynamic theory which allows US to predict the growth mode of ultra-thin metal films (spinodal decomposition vs. nucleation-and-growth regime) as a function of the metal coverage and the temperature, and to estimate the metal density in clusters. We show that 3a cluster formation becomes predominant already at low Cu coverages, in agreement with the experiment

Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p-i-n structure

Energy Technology Data Exchange (ETDEWEB)

Clayton, A.J., E-mail: andy.clayton@optictechnium.com [CSER, Glyndwr University, OpTIC Technium, St Asaph, LL17 0JD (United Kingdom); Irvine, S.J.C.; Barrioz, V.; Brooks, W.S.M. [CSER, Glyndwr University, OpTIC Technium, St Asaph, LL17 0JD (United Kingdom); Zoppi, G.; Forbes, I. [NPAC, Northumbria University, Newcastle upon Tyne, NE1 8ST (United Kingdom); Rogers, K.D.; Lane, D.W.; Hutchings, K.; Roncallo, S. [Centre for Material Science and Engineering, Cranfield University, Swindon, SN6 8LA (United Kingdom)

2011-08-31

Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeS{sub x} layer into a CdS/CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS{sub 2} after post growth sulphur (S) annealing of the FeS{sub x} layer between 400 deg. C and 500 deg. C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeS{sub x} layer were compared to p-n devices with only a CdS/CdTe structure. Devices with sulphurised FeS{sub x} layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeS{sub x} interface due to S inter-diffusion during the annealing process.

Ultra fast shutter driven by pulsed high current

International Nuclear Information System (INIS)

Zeng Jiangtao; Sun Fengju; Qiu Aici; Yin Jiahui; Guo Jianming; Chen Yulan

2005-01-01

Radiation simulation utilizing plasma radiation sources (PRS) generates a large number of undesirable debris, which may damage the expensive diagnosing detectors. An ultra fast shutter (UFS) driven by pulsed high current can erect a physical barrier to the slowly moving debris after allowing the passage of X-ray photons. The UFS consists of a pair of thin metal foils twisting the parallel axes in a Nylon cassette, compressed with an outer magnetic field, generated from a fast capacitor bank, discharging into a single turn loop. A typical capacitor bank is of 7.5 μF charging voltages varying from 30 kV to 45 kV, with corresponding currents of approximately 90 kA to 140 kA and discharging current periods of approximately 13.1 μs. A shutter closing time as fast as 38 microseconds has been obtained with an aluminium foil thickness of 100 micrometers and a cross-sectional area of 15 mm by 20 mm. The design, construction and the expressions of the valve-closing time of the UFS are presented along with the measured results of valve-closing velocities. (authors)

Ultra high resolution tomography

Energy Technology Data Exchange (ETDEWEB)

Haddad, W.S.

1994-11-15

Recent work and results on ultra high resolution three dimensional imaging with soft x-rays will be presented. This work is aimed at determining microscopic three dimensional structure of biological and material specimens. Three dimensional reconstructed images of a microscopic test object will be presented; the reconstruction has a resolution on the order of 1000 A in all three dimensions. Preliminary work with biological samples will also be shown, and the experimental and numerical methods used will be discussed.

75 FR 81284 - Nationwide Use of High Frequency and Ultra High Frequency Active SONAR Technology; Draft...

Science.gov (United States)

2010-12-27

... Frequency and Ultra High Frequency Active SONAR Technology; Draft Programmatic Environmental Assessment and... Programmatic Environmental Assessment (PEA) for the Nationwide Use of High Frequency (HF) and Ultra High... potential impacts of each alternative on the human and natural environments. DATES: Comments and related...

Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al{sub 2}O{sub 3} interlayers

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Lalit [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A. [Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bangalore 560012 (India); Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

2015-08-31

The effect of inserting ultra-thin atomic layer deposited Al{sub 2}O{sub 3} dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al{sub 2}O{sub 3}/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al{sub 2}O{sub 3} interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al{sub 2}O{sub 3} interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al{sub 2}O{sub 3}/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface.

Design of a thin-plate based tunable high-quality narrow passband filter for elastic transverse waves propagate in metals

Directory of Open Access Journals (Sweden)

J. Zhang

2018-03-01

Full Text Available For the elastic SV (transverse waves in metals, a high-quality narrow passband filter that consists of aligned parallel thin plates with small gaps is designed. In order to obtain a good performance, the thin plates should be constituted by materials with a smaller mass density and Young’s modulus, such as polymethylmethacrylate (PMMA, compared to the embedded materials in which the elastic SV waves propagate. Both the theoretical model and the full numerical simulation show that the transmission spectrum of the designed filter demonstrates several peaks with flawless transmission within 0 KHz ∼20 KHz frequency range. The peaks can be readily tuned by manipulating the geometrical parameters of the plates. Therefore, the current design works well for both low and high frequencies with a controllable size. Even for low frequencies on the order of kilohertz, the size of this filter can be still limited to the order of centimeters, which significantly benefits the real applications. The investigation also finds that the same filter is valid when using different metals and the reason behind this is explained theoretically. Additionally, the effect of bonding conditions of interfaces between thin plates and the base material is investigated using a spring model.

Stand quality management of a water oak plantation in Louisiana: preliminary results following thinning

Science.gov (United States)

James S. Meadows; Daniel A., Jr. Skojac

2010-01-01

Stand quality management is a new guiding principle in which thinning prescriptions are based on tree quality rather than on residual stand density. We recently initiated a series of hardwood thinning studies to determine the effects of four stand quality management thinning prescriptions on both stand-level and individual-tree-level growth, quality, and value: (1) no...

Evaluating the Ultra-High Pressure Homogenization (UHPH and Pasteurization effects on the quality and shelf life of donkey milk

Directory of Open Access Journals (Sweden)

Cephas Nii Akwei Addo

2015-04-01

Full Text Available Donkey milk has functional properties of great interest to human nutrition. The effects of ultra-high pressure homogenization (UHPH at 100 MPa, 200 MPa and 300 MPa in comparison with different pasteurization treatments of 70 °C for 1 min and 85 °C for 1 min on the physicochemical quality and shelf-life of treated and raw (untreated donkey milk were studied. Gross composition and pH, total mesophilic counts, lysozyme activity and physical stability were studied during storage at 4 °C for 28 days. The compositional profile showed resemblance to that of human milk characterized by high lactose, low fat and low protein content and was least affected by the treatments. UHPH treatments at 200 MPa, 300 MPa and 85 °C were able to maintain steady pH during storage whereas the low intensity treatments showed a significant decrease. The observed lysozyme activity in the samples was generally high and appeared to have been enhanced by the applied UHPH and pasteurization treatments with no significant change during storage. Although the raw milk showed good initial microbial quality, extensive growth of mesophilic microorganisms occurred after 7 days of storage, unlike the treated samples which were able to maintain significantly low counts throughout the storage period. The physical stability of milk was negatively influenced by the higher UHPH treatments of 200 MPa and 300 MPa which exhibited sedimentation phenomenon, while creaming was insignificant.

Controllable growth of stable germanium dioxide ultra-thin layer by means of capacitively driven radio frequency discharge

Energy Technology Data Exchange (ETDEWEB)

Svarnas, P., E-mail: svarnas@ece.upatras.gr [High Voltage Laboratory, Department of Electrical and Computer Engineering, University of Patras, Rion 26 504, Patras (Greece); Botzakaki, M.A. [Department of Physics, University of Patras, Rion 26 504 (Greece); Skoulatakis, G.; Kennou, S.; Ladas, S. [Surface Science Laboratory, Department of Chemical Engineering, University of Patras, Rion 26 504 (Greece); Tsamis, C. [NCSR “Demokritos”, Institute of Advanced Materials, Physicochemical Processes, Nanotechnology & Microsystems, Aghia Paraskevi 15 310, Athens (Greece); Georga, S.N.; Krontiras, C.A. [Department of Physics, University of Patras, Rion 26 504 (Greece)

2016-01-29

It is well recognized that native oxide of germanium is hygroscopic and water soluble, while germanium dioxide is thermally unstable and it is converted to volatile germanium oxide at approximately 400 °C. Different techniques, implementing quite complicated plasma setups, gas mixtures and substrate heating, have been used in order to grow a stable germanium oxide. In the present work a traditional “RF diode” is used for germanium oxidation by cold plasma. Following growth, X-ray photoelectron spectroscopy demonstrates that traditional capacitively driven radio frequency discharges, using molecular oxygen as sole feedstock gas, provide the possibility of germanium dioxide layer growth in a fully reproducible and controllable manner. Post treatment ex-situ analyses on day-scale periods disclose the stability of germanium oxide at room ambient conditions, offering thus the ability to grow (ex-situ) ultra-thin high-k dielectrics on top of germanium oxide layers. Atomic force microscopy excludes any morphological modification in respect to the bare germanium surface. These results suggest a simple method for a controllable and stable germanium oxide growth, and contribute to the challenge to switch to high-k dielectrics as gate insulators for high-performance metal-oxide-semiconductor field-effect transistors and to exploit in large scale the superior properties of germanium as an alternative channel material in future technology nodes. - Highlights: • Simple one-frequency reactive ion etcher develops GeO{sub 2} thin layers controllably. • The layers remain chemically stable at ambient conditions over day-scale periods. • The layers are unaffected by the ex-situ deposition of high-k dielectrics onto them. • GeO{sub 2} oxidation and high-k deposition don't affect the Ge morphology significantly. • These conditions contribute to improved Ge-based MOS structure fabrication.

Solid-state densification of spun-cast self-assembled monolayers for use in ultra-thin hybrid dielectrics

Energy Technology Data Exchange (ETDEWEB)

Hutchins, Daniel O.; Acton, Orb [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Weidner, Tobias [Department of Bioengineering, University of Washington, Seattle, WA 98195 (United States); Cernetic, Nathan [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Baio, Joe E. [Department of Chemical Engineering, University of Washington, Seattle, WA 98195 (United States); Castner, David G. [Department of Bioengineering, University of Washington, Seattle, WA 98195 (United States); Department of Chemical Engineering, University of Washington, Seattle, WA 98195 (United States); Ma, Hong, E-mail: hma@uw.edu [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Jen, Alex K.-Y., E-mail: ajen@uw.edu [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195 (United States); Department of Chemistry, University of Washington, Seattle, WA 98195 (United States)

2012-11-15

Highlights: Black-Right-Pointing-Pointer Rapid processing of SAM in ambient conditions is achieved by spin coating. Black-Right-Pointing-Pointer Thermal annealing of a bulk spun-cast molecular film is explored as a mechanism for SAM densification. Black-Right-Pointing-Pointer High-performance SAM-oxide hybrid dielectric is obtained utilizing a single wet processing step. - Abstract: Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlO{sub x} (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7 Multiplication-Sign 10{sup -8} A cm{sup -2} and capacitance density of 0.62 {mu}F cm{sup -2} at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to

Shock characterization of an ultra-high strength concrete

International Nuclear Information System (INIS)

Erzar, B.; Pontiroli, C.; Buzaud, E.

2016-01-01

Nowadays, the design of protective structures may imply ultra-high performance concretes. These materials present a compressive strength 5 times higher than standard concretes. However, few reliable data on the shock response of such materials are available in the literature. Thus, a characterization of an ultra-high strength concrete has been conducted by means of hydrostatic and triaxial tests in the quasi-static regime, and plate impact experiments for shock response. Data have been gathered up to 6 GPa and a simple modelling approach has been applied to get a reliable representation of the shock compression of this concrete. (authors)

Design Strategies for Ultra-high Efficiency Photovoltaics

Science.gov (United States)

Warmann, Emily Cathryn

While concentrator photovoltaic cells have shown significant improvements in efficiency in the past ten years, once these cells are integrated into concentrating optics, connected to a power conditioning system and deployed in the field, the overall module efficiency drops to only 34 to 36%. This efficiency is impressive compared to conventional flat plate modules, but it is far short of the theoretical limits for solar energy conversion. Designing a system capable of achieving ultra high efficiency of 50% or greater cannot be achieved by refinement and iteration of current design approaches. This thesis takes a systems approach to designing a photovoltaic system capable of 50% efficient performance using conventional diode-based solar cells. The effort began with an exploration of the limiting efficiency of spectrum splitting ensembles with 2 to 20 sub cells in different electrical configurations. Incorporating realistic non-ideal performance with the computationally simple detailed balance approach resulted in practical limits that are useful to identify specific cell performance requirements. This effort quantified the relative benefit of additional cells and concentration for system efficiency, which will help in designing practical optical systems. Efforts to improve the quality of the solar cells themselves focused on the development of tunable lattice constant epitaxial templates. Initially intended to enable lattice matched multijunction solar cells, these templates would enable increased flexibility in band gap selection for spectrum splitting ensembles and enhanced radiative quality relative to metamorphic growth. The III-V material family is commonly used for multijunction solar cells both for its high radiative quality and for the ease of integrating multiple band gaps into one monolithic growth. The band gap flexibility is limited by the lattice constant of available growth templates. The virtual substrate consists of a thin III-V film with the desired

Fiscal 1997 report on the development of an energy use rationalization ultra-high tech liquid crystal technology. Project of development/promotion of ultra-high tech electronic technology / technology of design/control/analysis of new functional electronic materials; 1997 nendo kenkyu seika hokokusho energy shiyo gorika chosentan ekisho gijutsu kaihatsu. Chosentan denshi gijutsu kaihatsu sokushin jigyo / shinkino denshi zairyo sekkei seigyo bunseki gijutsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-05-01

A research was conducted with the aim of developing an ultra-low power consuming type information display which supports the next next generation informatizing society. As to the function combined type fine structure formation technology, a formation technology of fine structure supporting multi-layer pixel by organic polymer materials was established to confirm a possibility of adopting it to high functional liquid crystal display. Concerning the high functional fine structure formation technology, a study was proceeded with on holographic PDLC which is an interference reflection coloring method. In relation to the low temperature film formation technology of ferroelectric thin films, a film formation device was introduced to obtain basic data, and at the same time a possibility was studied of improving film characteristics by laser annealing conducted after the film formation. Moreover, concerning the new functional material technology, studies were made of optical interference/high light-scattering control materials, light alignment elements, ultra-high purity/ultra-reliable optical materials, ultra-anisotropy optical materials, etc. About the light reflection characteristics control technology, studied were new liquid crystal molucular orientaion control technology, multi-dimensional anisotropy structure formation technology, etc. 100 refs., 273 figs., 58 tabs.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

International Nuclear Information System (INIS)

Xu Hao; Yang Hong; Luo Wei-Chun; Xu Ye-Feng; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Qi Lu-Wei; Li Jun-Feng; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

2016-01-01

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high- k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it / N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. (paper)

Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

Science.gov (United States)

Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.

2018-04-01

In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

Solutions for ultra-high speed optical wavelength conversion and clock recovery

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Galili, Michael; Mulvad, Hans Christian Hansen

2006-01-01

This paper reports on our recent advances in ultra-fast optical communications relying on ultra-short pulses densely stacked in ultra-high bit rate serial data signals at a single wavelength. The paper describes details in solutions for the network functionalities of wavelength conversion and clock...... recovery at bit rates up to 320 Gb/s...

On-chip ultra-thin layer chromatography and surface enhanced Raman spectroscopy.

Science.gov (United States)

Chen, Jing; Abell, Justin; Huang, Yao-wen; Zhao, Yiping

2012-09-07

We demonstrate that silver nanorod (AgNR) array substrates can be used for on-chip separation and detection of chemical mixtures by combining ultra-thin layer chromatography (UTLC) and surface enhanced Raman spectroscopy (SERS). The UTLC-SERS plate consists of an AgNR array fabricated by oblique angle deposition. The capability of the AgNR substrates to separate the different compounds in a mixture was explored using a mixture of four dyes and a mixture of melamine and Rhodamine 6G at varied concentrations with different mobile phase solvents. After UTLC separation, spatially-resolved SERS spectra were collected along the mobile phase development direction and the intensities of specific SERS peaks from each component were used to generate chromatograms. The AgNR substrates demonstrate the potential for separating the test dyes with plate heights as low as 9.6 μm. The limits of detection are between 10(-5)-10(-6) M. Furthermore, we show that the coupling of UTLC with SERS improves the SERS detection specificity, as small amounts of target analytes can be separated from the interfering background components.

Probing stress state and phase content in ultra-thin Ta films

International Nuclear Information System (INIS)

Whitacre, J.F.; Yalisove, S.M.; Bilello, J.C.; Rek, Z.U.

1998-01-01

Ta films 25 angstrom to 200 angstrom in thickness were sputter-deposited using different sputter gas (Ar) pressures and cathode power settings. The average in-plane stresses were determined using double crystal diffraction topography (DCDT). X-ray analysis (using the grazing incidence x-ray scattering (GIXS) geometry) was performed using a synchrotron light source. To study microstructure and phase content, transmission electron microscopy (TEM) and transmission electron diffraction (TED) were used. Well resolved x-ray patterns were collected for all of the films. The DCDT stress data was found to be consistent with stress effects evidence in the GIXS data. In general, residual stress state was not strongly dependent upon Ar pressure. The strongest evidence of amorphous content was found in both x-ray and TED data taken from 25 angstrom thick films deposited using 2mTorr Ar pressure and 460 W cathode power. These results show that it is possible to create and study ultra-thin Ta films which possess a range of residual stresses and phase compositions

Ultra-thin and strong formvar-based membranes with controlled porosity for micro- and nano-scale systems

Science.gov (United States)

Auchter, Eric; Marquez, Justin; Stevens, Garrison; Silva, Rebecca; Mcculloch, Quinn; Guengerich, Quintessa; Blair, Andrew; Litchfield, Sebastian; Li, Nan; Sheehan, Chris; Chamberlin, Rebecca; Yarbro, Stephen L.; Dervishi, Enkeleda

2018-05-01

We present a methodology for developing ultra-thin and strong formvar-based membranes with controlled morphologies. Formvar is a thin hydrophilic and oleophilic polymer inert to most chemicals and resistant to radiation. The formvar-based membranes are viable materials as support structures in micro- and macro-scale systems depending on thinness and porosity control. Tunable sub-micron thick porous membranes with 20%–65% porosity were synthesized by controlling the ratios of formvar, glycerol, and chloroform. This synthesis process does not require complex separation or handling methods and allows for the production of strong, thin, and porous formvar-based membranes. An expansive array of these membrane characterizations including chemical compatibility, mechanical responses, wettability, as well as the mathematical simulations as a function of porosity has been presented. The wide range of chemical compatibility allows for membrane applications in various environments, where other polymers would not be suitable. Our formvar-based membranes were found to have an elastic modulus of 7.8 GPa, a surface free energy of 50 mN m‑1 and an average thickness of 125 nm. Stochastic model simulations indicate that formvar with the porosity of ∼50% is the optimal membrane formulation, allowing the most material transfer across the membrane while also withstanding the highest simulated pressure loadings before tearing. Development of novel, resilient and versatile membranes with controlled porosity offers a wide range of exciting applications in the fields of nanoscience, microfluidics, and MEMS.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

Science.gov (United States)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Crescent shaped Fabry-Perot fiber cavity for ultra-sensitive strain measurement

Science.gov (United States)

Liu, Ye; Wang, D. N.; Chen, W. P.

2016-12-01

Optical Fabry-Perot interferometer sensors based on inner air-cavity is featured with compact size, good robustness and high strain sensitivity, especially when an ultra-thin air-cavity is adopted. The typical shape of Fabry-Perot inner air-cavity with reflection mode of operation is elliptic, with minor axis along with and major axis perpendicular to the fiber length. The first reflection surface is diverging whereas the second one is converging. To increase the visibility of the output interference pattern, the length of major axis should be large for a given cavity length. However, the largest value of the major axis is limited by the optical fiber diameter. If the major axis length reaches the fiber diameter, the robustness of the Fabry-Perot cavity device would be decreased. Here we demonstrate an ultra-thin crescent shaped Fabry-Perot cavity for strain sensing with ultra-high sensitivity and low temperature cross-sensitivity. The crescent-shape cavity consists of two converging reflection surfaces, which provide the advantages of enhanced strain sensitivity when compared with elliptic or D-shaped FP cavity. The device is fabricated by fusion splicing an etched multimode fiber with a single mode fiber, and hence is simple in structure and economic in cost.

A high-efficiency solution-deposited thin-film photovoltaic device

Energy Technology Data Exchange (ETDEWEB)

Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G [IBM T. J. Watson Research Center, Yorktown Heights, NY (United States); Kellock, Andrew J; Deline, Vaughn [IBM Almaden Research Center, San Jose, CA (United States)

2008-10-02

High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)

Sintering of ultra high molecular weight polyethylene

Indian Academy of Sciences (India)

Abstract. Ultra high molecular weight polyethylene (UHMWPE) is a high performance polymer having low coefficient of friction, good abrasion resistance, good chemical ... In this study, we report our results on compaction and sintering behaviour of two grades of UHMWPE with reference to the powder morphology, sintering ...

Surface modification of ultra thin PES-zeolite using thermal annealing to increase flux and rejection of produced water treatment

Energy Technology Data Exchange (ETDEWEB)

Kusworo, T. D., E-mail: tdkusworo@che.undip.ac.id; Widayat,; Pradini, A. W.; Armeli, Y. P. [Department of Chemical Engineering, University of Diponegoro Prof. Soedarto, Tembalang, Semarang, 50239, Phone/Fax : (024) 7460058 (Indonesia)

2015-12-29

Membrane technology is an alternative of water treatment based on filtration that is being developed. Surface Modification using heat treatment has been investigated to improve the performance of ultra thin PES-Zeolite nanocomposite membrane for produced water treatment from Pertamina Balongan. Two types of membranes with surface modification and without modification were prepared to study the effect of surface modification on its permeation properties. Asymmetric ultra thin PES-Zeolite nanocomposite membrane for produced water treatment was casted using the dry/wet phase inversion technique from dope solutions containing polyethersulfone, N-methyl-2-pyrrolidone (NMP) as a solvent and zeolite as a filler. Experimental results showed that the heat treatment at near glass transition temperature was increase the rejection of COD, Turbidity and ion Ca{sup 2+}. The better adherence of zeolite particles in the polymer matrix combined with formation of charge transfer complexes (CTCs) and cross-linking might be the main factors to enhance the percent of rejection. Field emission scanning electron microscopy (FESEM) micrographs showed that the selective layer and the substructure of PES-zeolite membrane became denser and more compact after the heat treatment. The FESEM micrographs also showed that the heat treatment was increased the adherence of zeolite particle and polymer. Membranes treated at 180 °C for 15 seconds indicated increase the rejection and small decrease in flux for produced water treatment.

Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells

Energy Technology Data Exchange (ETDEWEB)

Aeberhard, Urs, E-mail: u.aeberhard@fz-juelich.de [IEK-5 Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich (Germany)

2016-07-18

We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and optically injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.

Characterization and modeling of a highly-oriented thin film for composite forming

Science.gov (United States)

White, K. D.; Sherwood, J. A.

2018-05-01

Ultra High Molecular Weight Polyethylene (UHMWPE) materials exhibit high impact strength, excellent abrasion resistance and high chemical resistance, making them attractive for a number of impact applications for automotive, marine and medical industries. One format of this class of materials that is being considered for the thermoforming process is a highly-oriented extruded thin film. Parts are made using a two-step manufacturing process that involves first producing a set of preforms and then consolidating these preforms into a final shaped part. To assist in the design of the processing parameters, simulations of the preforming and compression molding steps can be completed using the finite element method. Such simulations require material input data as developed through a comprehensive characterization test program, e.g. shear, tensile and bending, over the range of potential processing temperatures. The current research investigates the challenges associated with the characterization of thin, highly-oriented UHMWPE films. Variations in grip type, sample size and testing rates are explored to achieve convergence of the characterization data. Material characterization results are then used in finite element simulations of the tension test to explore element formulations that work well with the mechanical behavior. Comparisons of the results from the material characterization tests to results of simulations of the same test are performed to validate the finite element method parameters and the credibility of the user-defined material model.

Social relationships in young adults at ultra high risk for psychosis.

Science.gov (United States)

Robustelli, Briana L; Newberry, Raeana E; Whisman, Mark A; Mittal, Vijay A

2017-01-01

Studies suggest that individuals with schizophrenia have smaller social networks and less satisfying relationships. However, much is still unknown about the typical quantity and quality of social relationships in young adults during the ultra high-risk (UHR) period. Investigating these relationships holds significant importance for improving understanding of etiological processes, mapping the social environment, and highlighting treatment targets in a critical period. A total of 85 participants (44 UHR and 41 healthy controls) completed measures examining the participants' social relationships, social support, and loneliness. Mean differences between the UHR and healthy control participants and associations between social relationships and symptoms and functioning were examined. Results indicated significant differences between groups on several indices. Specifically, the UHR youth reported fewer close friends, less diverse social networks, less perceived social support, poorer relationship quality with family and friends, and more loneliness. Notably, within the UHR group, being lonely and having fewer and worse quality relationships was associated with greater symptom severity and lower overall functioning. This study suggests that youth at high-risk of developing psychosis have fewer and poorer quality social relationships. Interventions that focus on increasing the quantity and quality of young adults' social networks may be beneficial for this population. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

Consumers' conceptualization of ultra-processed foods.

Science.gov (United States)

Ares, Gastón; Vidal, Leticia; Allegue, Gimena; Giménez, Ana; Bandeira, Elisa; Moratorio, Ximena; Molina, Verónika; Curutchet, María Rosa

2016-10-01

Consumption of ultra-processed foods has been associated with low diet quality, obesity and other non-communicable diseases. This situation makes it necessary to develop educational campaigns to discourage consumers from substituting meals based on unprocessed or minimally processed foods by ultra-processed foods. In this context, the aim of the present work was to investigate how consumers conceptualize the term ultra-processed foods and to evaluate if the foods they perceive as ultra-processed are in concordance with the products included in the NOVA classification system. An online study was carried out with 2381 participants. They were asked to explain what they understood by ultra-processed foods and to list foods that can be considered ultra-processed. Responses were analysed using inductive coding. The great majority of the participants was able to provide an explanation of what ultra-processed foods are, which was similar to the definition described in the literature. Most of the participants described ultra-processed foods as highly processed products that usually contain additives and other artificial ingredients, stressing that they have low nutritional quality and are unhealthful. The most relevant products for consumers' conceptualization of the term were in agreement with the NOVA classification system and included processed meats, soft drinks, snacks, burgers, powdered and packaged soups and noodles. However, some of the participants perceived processed foods, culinary ingredients and even some minimally processed foods as ultra-processed. This suggests that in order to accurately convey their message, educational campaigns aimed at discouraging consumers from consuming ultra-processed foods should include a clear definition of the term and describe some of their specific characteristics, such as the type of ingredients included in their formulation and their nutritional composition. Copyright © 2016 Elsevier Ltd. All rights reserved.

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Ultra-high Efficiency DC-DC Converter using GaN Devices

DEFF Research Database (Denmark)

Ramachandran, Rakesh

2016-01-01

properties of GaN devices can be utilized in power converters to make them more compact and highly efficient. This thesis entitled “Ultra-high Efficiency DC-DC Converter using GaN devices” focuses on achieving ultra-high conversion efficiency in an isolated dc-dc converter by the optimal utilization of Ga...... for many decades. However, the rate of improvement slowed as the silicon power materials asymptotically approached its theoretical bounds. Compared to Si, wideband gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are promising semiconductors for power devices due to their superior...... in this thesis. Efficiency measurements from the hardware prototype of both the topologies are also presented in this thesis. Finally, the bidirectional operation of an optimized isolated dc-dc converter is presented. The optimized converter has achieved an ultra-high efficiency of 98.8% in both directions...

Ultra-high energy cosmic rays and prompt TeV gamma rays from ...

Indian Academy of Sciences (India)

physics pp. 789-792. Ultra-high energy cosmic rays and prompt. TeV gamma rays from gamma ray bursts ... The origin of the observed ultra-high energy cosmic ray (UHECR) events with ... are proton and electron rest mass, respectively.

Scaling violations at ultra-high energies

International Nuclear Information System (INIS)

Tung, W.K.

1979-01-01

The paper discusses some of the features of high energy lepton-hadron scattering, including the observed (Bjorken) scaling behavior. The cross-sections where all hadron final states are summed over, are examined and the general formulas for the differential cross-section are examined. The subjects of scaling, breaking and phenomenological consequences are studied, and a list of what ultra-high energy neutrino physics can teach QCD is given

Status of Joining Thin Sheet and Thin Wall Tubes of 14YWT

Energy Technology Data Exchange (ETDEWEB)

Hoelzer, David T. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Unocic, Kinga A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Tang, Wei [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Feng, Zhili [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2015-09-18

Beginning this fiscal year, the FCRD research project initiated an investigation on joining thin sections of the advanced ODS 14YWT ferritic alloy. Friction stir welding (FSW) was investigated as a method to join thin plate and tubing of 14YWT since it is a solid state joining method that has been shown in past studies to be a promising method for joining plates of ODS alloys, such as 14YWT. However, this study will attempt to be the first to demonstrate if FSW can successfully join thin plates and thin wall tubing of 14YWT. In the first FSW attempt, a 1.06 cm thick plate of 14YWT (SM13 heat) was successfully rolled at 1000ºC to the target thickness of 0.1 cm with no edge cracking. This achievement is a highlight since previous attempts to roll 14YWT plates have resulted in extensive cracking. For the FSW run, a pin tool being developed by the ORNL FSW Process Development effort was used. The first FSW run successfully produced a bead-on-plate weld in the 0.1 cm thick plate. The quality of the weld zone appears very good with no evidence of large defects such as cavities. The microstructural characterization study of the bead-on-plate weld zone has been initiated to compare the results of the microstructure analysis with those obtained in the reference microstructural analysis of the 14YWT (SM13 heat) that showed ultra-fine grain size of 0.43 μm and a high number density of ~2-5 nm sizes oxygen-enriched nanoclusters.

Progress of admixtures and quality of concrete. 2. ; Approaches to ultra-high-strength concrete. Konwa zairyo no shinpo to concrete no hinshitsu. 2. ; Chokokyodo concrete eno approach

Energy Technology Data Exchange (ETDEWEB)

Kawai, T. (Shimizu Construction Co. Ltd., Tokyo (Japan)); Abe, M. (Building Research Institute, Tsukuba (Japan))

1994-02-15

Ultra-high-strength concrete of 600 kgf/cm[sup 2] or more is reviewed. MDF (macro defect free) cement, spheroidal cement and mechanically stabilized cement have been developed for ultra-high-strength concrete, however, in general, DSP (densified system containing homogeneously arranged ultra-fine particles) technique is now usual in which a water-cement ratio is reduced by use of advanced air entraining and water reducing agents and cured concrete is densified by use of ultra-fine particles as admixture. Four kinds of substances such as naphthalene system and polycarboxylic acid system are used as air entraining and water reducing agents, and silica fume is used as ultra-fine particle admixture which can be effectively replaced with blast furnace slag or fly ash. Various use examples of ultra-high-strength concrete such as an ocean platform are found in the world, however, only some examples such as a PC truss bridge and the main tower of a PC cable stayed bridge in Japan. 22 refs., 10 figs., 2 tabs.

Flexible Mixed-Potential-Type (MPT NO2 Sensor Based on An Ultra-Thin Ceramic Film

Directory of Open Access Journals (Sweden)

Rui You

2017-07-01

Full Text Available A novel flexible mixed-potential-type (MPT sensor was designed and fabricated for NO2 detection from 0 to 500 ppm at 200 °C. An ultra-thin Y2O3-doped ZrO2 (YSZ ceramic film 20 µm thick was sandwiched between a heating electrode and reference/sensing electrodes. The heating electrode was fabricated by a conventional lift-off process, while the porous reference and the sensing electrodes were fabricated by a two-step patterning method using shadow masks. The sensor’s sensitivity is achieved as 58.4 mV/decade at the working temperature of 200 °C, as well as a detection limit of 26.7 ppm and small response time of less than 10 s at 200 ppm. Additionally, the flexible MPT sensor demonstrates superior mechanical stability after bending over 50 times due to the mechanical stability of the YSZ ceramic film. This simply structured, but highly reliable flexible MPT NO2 sensor may lead to wide application in the automobile industry for vehicle emission systems to reduce NO2 emissions and improve fuel efficiency.

Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.

Science.gov (United States)

Yu, Jinling; Zeng, Xiaolin; Cheng, Shuying; Chen, Yonghai; Liu, Yu; Lai, Yunfeng; Zheng, Qiao; Ren, Jun

2016-12-01

The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) is also employed to study the interface asymmetry of the QWs, whose results are in good agreement with that obtained by CPGE measurements. It is demonstrated that the inserted ultra-thin InAs layers will not only introduce structure inversion asymmetry (SIA), but also result in additional interface inversion asymmetry (IIA), whose effect is much stronger in QWs with smaller well width. It is also found that the inserted InAs layer brings in larger SIA than IIA. The origins of the additional SIA and IIA introduced by the inserted ultra-thin InAs layer have been discussed.

Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

International Nuclear Information System (INIS)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

2014-01-01

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

KAUST Repository

Onyegam, Emmanuel U.; Sarkar, Dabraj; Hilali, Mohamed M.; Saha, Sayan; Mathew, Leo; Rao, Rajesh A.; Smith, Ryan S.; Xu, Dewei; Jawarani, Dharmesh; Garcia, Ricardo; Ainom, Moses; Banerjee, Sanjay K.

2014-01-01

Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.

Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

KAUST Repository

Onyegam, Emmanuel U.

2014-04-14

Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.

Ultra-Thin Multi-Band Polarization-Insensitive Microwave Metamaterial Absorber Based on Multiple-Order Responses Using a Single Resonator Structure

Directory of Open Access Journals (Sweden)

Yong Zhi Cheng

2017-10-01

Full Text Available We design an ultra-thin multi-band polarization-insensitive metamaterial absorber (MMA using a single circular sector resonator (CSR structure in the microwave region. Simulated results show that the proposed MMA has three distinctive absorption peaks at 3.35 GHz, 8.65 GHz, and 12.44 GHz, with absorbance of 98.8%, 99.7%, and 98.3%, respectively, which agree well with an experiment. Simulated surface current distributions of the unit-cell structure reveal that the triple-band absorption mainly originates from multiple-harmonic magnetic resonance. The proposed triple-band MMA can remain at a high absorption level for all polarization of both transverse-electric (TE and transverse-magnetic (TM modes under normal incidence. Moreover, by further optimizing the geometric parameters of the CSRs, four-band and five-band MMAs can also be obtained. Thus, our design will have potential application in detection, sensing, and stealth technology.

Organic photovoltaics using thin gold film as an alternative anode to indium tin oxide

International Nuclear Information System (INIS)

Haldar, Amrita; Yambem, Soniya D.; Liao, Kang-Shyang; Alley, Nigel J.; Dillon, Eoghan P.; Barron, Andrew R.; Curran, Seamus A.

2011-01-01

Indium Tin Oxide (ITO) is the most commonly used anode as a transparent electrode and more recently as an anode for organic photovoltaics (OPVs). However, there are significant drawbacks in using ITO which include high material costs, mechanical instability including brittleness and poor electrical properties which limit its use in low-cost flexible devices. We present initial results of poly(3-hexylthiophene): phenyl-C 61 -butyric acid methyl ester OPVs showing that an efficiency of 1.9% (short-circuit current 7.01 mA/cm 2 , open-circuit voltage 0.55 V, fill factor 0.49) can be attained using an ultra thin film of gold coated glass as the device anode. The initial I-V characteristics demonstrate that using high work function metals when the thin film is kept ultra thin can be used as a replacement to ITO due to their greater stability and better morphological control.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

Science.gov (United States)

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-10-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se 2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF 2 coated with a thin atomic layer deposited Al 2 O 3 layer, or direct current magnetron sputtering of Al 2 O 3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al 2 O 3 /CIGS rear interface. (MgF 2 /)Al 2 O 3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

Science.gov (United States)

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-01-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

Development of Dynamic Compaction Technology for Ultra High Strength Powder Products

International Nuclear Information System (INIS)

Rhee, Chang Kyu; Lee, M. K.; Uhm, Y. R.; Park, J. J.; Lee, J. G.; Ivanov, V. V.; Hong, S. J.

2007-04-01

A synthesis of ultra fine powder and its compaction have been considered as a new generation and high value added technology in various industrial fields such as automobile, machine tool, electronic chip, sensor and catalyst because of its special characteristics of high toughness, strength and wear resistance which are not shown in conventional process. In this study, ultra hard and fine powders, such as Fe-Si, CuNi and Al 2 O 3 , have been fabricated by the pulsed wire evaporation (PWE) method and mechanical alloying (MA) method. In addition, with ultra hard and fine powders, the magnetic core, diamond tool and water jet nozzle with high density were made by a uniaxial dynamic compaction for the purpose of the real industrial application

Ultra high-energy cosmic ray composition

International Nuclear Information System (INIS)

Longley, N.P.

1993-01-01

The Soudan 2 surface-underground cosmic ray experiment can simultaneously measure surface shower size, underground muon multiplicity, and underground muon separation for ultra high energy cosmic ray showers. These measurements are sensitive to the primary composition. Analysis for energies from 10 1 to 10 4 TeV favors a light flux consisting of predominantly H and He nuclei

Connections in Precast Buildings using Ultra High-Strength Fibre Reinforced Concrete

DEFF Research Database (Denmark)

Hansen, Lars Pilegaard

1995-01-01

Ultra high-strength concrete adds new dimensions to the design of concrete structures. It is a brittle material but introducing fibres into the matrix changes the material into a highly ductile material. Furthermore, the fibre reinforcement increases the anchorage of traditional reinforcement bar...... and the fire resistance. Such a fibre reinforced ultra high-strength material has been used to develop a simple joint solution between slab elements in a column - slab building system....

Advances in copper-chalcopyrite thin films for solar energy conversion

Energy Technology Data Exchange (ETDEWEB)

Kaneshiro, Jess; Gaillard, Nicolas; Rocheleau, Richard; Miller, Eric [Hawaii Natural Energy Institute, University of Hawaii at Manoa, 1680 East-West Road, Post 109, Honolulu, HI 96822 (United States)

2010-01-15

Promising alternatives to crystalline silicon as the basic building block of solar cells include copper-chalcopyrite thin films such as copper indium gallium diselenide, a class of thin films exhibiting bandgap-tunable semiconductor behavior, direct bandgaps and high absorption coefficients. These properties allow for the development of novel solar-energy conversion configurations like ultra-high efficiency multi-junction solar cells utilizing combinations of photovoltaic and photoelectrochemical junctions for hydrogen production. This paper discusses the current worldwide status as well as the development and optimization of copper-chalcopyrite thin films deposited onto various substrate types for different photovoltaic and photoelectrochemical applications at the Hawaii Natural Energy Institute. (author)

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

Science.gov (United States)

Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

2016-12-01

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

Ultra high performance concrete made with rice husk ash for reduced autogenous shrinkage

NARCIS (Netherlands)

Van Breugel, K.; Van Tuan, N.

2014-01-01

Ultra High Strength Concrete (UHPC) is generally made with low w/c mixtures and by adding silica fume. Low w/c mixtures, however, exhibit high autogenous shrinkage, while a high amount of silica fume increases the price of these mixtures. For designing ultra high strength mixtures with low

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

Science.gov (United States)

Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

2018-05-01

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

Dynamics and morphology of chiral magnetic bubbles in perpendicularly magnetized ultra-thin films

Science.gov (United States)

Sarma, Bhaskarjyoti; Garcia-Sanchez, Felipe; Nasseri, S. Ali; Casiraghi, Arianna; Durin, Gianfranco

2018-06-01

We study bubble domain wall dynamics using micromagnetic simulations in perpendicularly magnetized ultra-thin films with disorder and Dzyaloshinskii-Moriya interaction. Disorder is incorporated into the material as grains with randomly distributed sizes and varying exchange constant at the edges. As expected, magnetic bubbles expand asymmetrically along the axis of the in-plane field under the simultaneous application of out-of-plane and in-plane fields. Remarkably, the shape of the bubble has a ripple-like part which causes a kink-like (steep decrease) feature in the velocity versus in-plane field curve. We show that these ripples originate due to the nucleation and interaction of vertical Bloch lines. Furthermore, we show that the Dzyaloshinskii-Moriya interaction field is not constant but rather depends on the in-plane field. We also extend the collective coordinate model for domain wall motion to a magnetic bubble and compare it with the results of micromagnetic simulations.

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

Science.gov (United States)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

Oxygen-enabled control of Dzyaloshinskii-Moriya Interaction in ultra-thin magnetic films

KAUST Repository

Belabbes, Abderrezak

2016-04-22

The search for chiral magnetic textures in systems lacking spatial inversion symmetry has attracted a massive amount of interest in the recent years with the real space observation of novel exotic magnetic phases such as skyrmions lattices, but also domain walls and spin spirals with a defined chirality. The electrical control of these textures offers thrilling perspectives in terms of fast and robust ultrahigh density data manipulation. A powerful ingredient commonly used to stabilize chiral magnetic states is the so-called Dzyaloshinskii-Moriya interaction (DMI) arising from spin-orbit coupling in inversion asymmetric magnets. Such a large antisymmetric exchange has been obtained at interfaces between heavy metals and transition metal ferromagnets, resulting in spin spirals and nanoskyrmion lattices. Here, using relativistic first-principles calculations, we demonstrate that the magnitude and sign of DMI can be entirely controlled by tuning the oxygen coverage of the magnetic film, therefore enabling the smart design of chiral magnetism in ultra-thin films. We anticipate that these results extend to other electronegative ions and suggest the possibility of electrical tuning of exotic magnetic phases.

Ultra-high field MRI: Advancing systems neuroscience towards mesoscopic human brain function

NARCIS (Netherlands)

Dumoulin, Serge O; Fracasso, A.; Van der Zwaag, W.; Siero, Jeroen C W; Petridou, Natalia

2018-01-01

Human MRI scanners at ultra-high magnetic field strengths of 7 T and higher are increasingly available to the neuroscience community. A key advantage brought by ultra-high field MRI is the possibility to increase the spatial resolution at which data is acquired, with little reduction in image

A Delay Time Measurement of ULTRAS (Ultra-high Temperature Ultrasonic Response Analysis System) for a High Temperature Experiment

International Nuclear Information System (INIS)

Koo, Kil Mo; Kim, Sang Baik

2010-01-01

The temperature measurement of very high temperature core melt is of importance in a high temperature as the molten pool experiment in which gap formation between core melt and the reactor lower head, and the effect of the gap on thermal behavior are to be measured. The existing temperature measurement techniques have some problems, which the thermocouple, one of the contact methods, is restricted to under 2000 .deg. C, and the infrared thermometry, one of the non-contact methods, is unable to measure an internal temperature and very sensitive to the interference from reacted gases. In order to solve these problems, the delay time technique of ultrasonic wavelets due to high temperature has two sorts of stage. As a first stage, a delay time measurement of ULTRAS (Ultra-high Temperature Ultrasonic Response Analysis System) is suggested. As a second stage, a molten material temperature was measured up to 2300 .deg. C. Also, the optimization design of the UTS (ultrasonic temperature sensor) with persistence at the high temperature was suggested in this paper. And the utilization of the theory suggested in this paper and the efficiency of the developed system are performed by special equipment and some experiments supported by KRISS (Korea Research Institute of Standard and Science)

Lithium battery electrodes with ultra-thin alumina coatings

Science.gov (United States)

Se-Hee, Lee; George, Steven M.; Cavanagh, Andrew S.; Yoon Seok, Jung; Dillon, Anne C.

2015-11-24

Electrodes for lithium batteries are coated via an atomic layer deposition process. The coatings can be applied to the assembled electrodes, or in some cases to particles of electrode material prior to assembling the particles into an electrode. The coatings can be as thin as 2 .ANG.ngstroms thick. The coating provides for a stable electrode. Batteries containing the electrodes tend to exhibit high cycling capacities.

Ultra-tough and strong, hybrid thin films based on ionically crosslinked polymers and 2D inorganic platelets

Science.gov (United States)

Ji, Dong Hwan; Choi, Suji; Kim, Jaeyun; nanobiomaterials lab Team

Integration of high strength and toughness tend to be mutually exclusive and synthesized hybrid films with superior mechanical properties have been difficult to fabricate controllable shapes and various scales. Although diverse synthesized hybrid films consisting of organic matrix and inorganic materials with brick-and-mortar structure, show improved mechanical properties, these films are still limited in toughness and fabrication methods. Herein, we report ultra-tough and strong hybrid thin films with self-assembled uniform microstructures with controllable shapes and various scale based on hydrogel-mediated process. Ca2+-crosslinking in alginate chains and well-aligned alumina platelets in alginate matrix lead to a synergistic enhancement of strength and toughness in the resulting film. Consequentially, Ca2+-crosslinked Alg/Alu films showed outstanding toughness of 29 MJ m-3 and tensile strength of 160 MPa. Furthermore, modifying Alu surface with polyvinylpyrrolidone (PVP), tensile strength was further improved up to 200 MPa. Our results suggest an alternative approach to design and processing of self-assembled hydrogel-mediated hybrid films with outstanding mechanical properties.

A novel ultra-thin 3D detector-For plasma diagnostics at JET and ITER tokamaks

International Nuclear Information System (INIS)

Garcia, Francisco; Pelligrini, G.; Balbuena, J.; Lozano, M.; Orava, R.; Ullan, M.

2009-01-01

A novel ultra-thin silicon detector called U3DTHIN has been designed and built for applications that range from Neutral Particle Analyzers (NPA) used in Corpuscular Diagnostics of High Temperature Plasma to very low X-ray spectroscopy. The main purpose of this detector is to provide a state-of-the-art solution to upgrade the current detector system of the NPAs at JET and also to pave the road for the future detection systems of the ITER experimental reactor. Currently the NPAs use a very thin scintillator-photomultiplier tube [F. Garcia, S.S. Kozlovsky, D.V. Balin, Background Properties of CEM, MCP and PMT detectors at n-γ irradiation. Preprint PNPI-2392, Gatchina, 2000, p. 9 ; F. Garcia, S.S. Kozlovsky, V.V. Ianovsky, Scintillation Detectors with Low Sensitivity to n-γ Background. Preprint PNPI-2391, Gatchina, 2000, p. 8 ], and their main drawbacks are poor energy resolution, intrinsic scintillator nonlinearity, and relative low count rate capability and finally poor signal-to-background discrimination for the low-energy channels. The proposed new U3DTHIN detector is based on very thin sensitive substrate, which will provide nearly 100% detection efficiency for ions and at the same time very low sensitivity for neutron and gamma backgrounds. To achieve a very fast collection of the charge carriers generated by the incident ions, a 3D electrode structure [S. Parker, C. Kenney, J. Segal, Nucl. Instr. and Meth. A 395 (1997) 328 ; G. Pellegrini, P. Roy, A. Al-Ajili, R. Bates, L. Haddad, M. Horn, K. Mathieson, J. Melone, V. O'Shea, K.M. Smith, Nucl. Instr. and Meth. A 487 (2002) 19 ] has been introduced in the sensitive volume of the detector. The geometry of the electrode is known to be rad-hard. One of the most innovative features of these detectors is the optimal combination of the thin entrance window and the sensitive substrate thickness, which allows a very large dynamic range for ion detection. GEANT4 simulations were performed to find the losses of energy in

Research and development of photovoltaic power system. Development of novel technologies for fabrication of high quality silicon thin films for solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Kohinshitsu silicon usumaku sakusei gijutsu

Energy Technology Data Exchange (ETDEWEB)

Shimizu, T [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

1994-12-01

Described herein are the results of the FY1994 research program for development of novel technologies for fabrication of high quality thin films of silicon for solar cells. The study on the mechanisms and effects of chemical annealing reveals that the film structure greatly varies depending on substrate temperature during the hydrotreatment process, based on the tests with substrate temperature, deposition of superthin film (T1) and hydrotreatment (T2) as the variable parameters. Chemical annealing at low temperature produces a high-quality a-Si:H film of low defect content. The study on fabrication of thin polycrystalline silicon films at low temperature observes on real time the process of deposition of the thin films on polycrystalline silicon substrates, where a natural oxide film is removed beforehand from the substrate. The results indicate that a thin polycrystalline silicon film of 100% crystallinity can be formed even on a polycrystalline silicon substrate by controlling starting gas composition and substrate temperature. The layer-by-layer method is used as the means for forming the seed crystals on a glass substrate, where deposition and hydrotreatment are repeated alternately, to produce the thin crystalline silicon films of high crystallinity. 3 figs.

Spalling behavior and residual resistance of fibre reinforced Ultra-High performance concrete after exposure to high temperatures

Directory of Open Access Journals (Sweden)

Xiong, Ming-Xiang

2015-12-01

Full Text Available Experimental results of spalling and residual mechanical properties of ultra-high performance concrete after exposure to high temperatures are presented in this paper. The compressive strength of the ultra-high performance concrete ranged from 160 MPa~185 MPa. This study aimed to discover the effective way to prevent spalling for the ultra-high performance concrete and gauge its mechanical properties after it was subjected to fire. The effects of fiber type, fiber dosage, heating rate and curing condition were investigated. Test results showed that the compressive strength and elastic modulus of the ultra-high performance concrete declined slower than those of normal strength concrete after elevated temperatures. Polypropylene fiber rather than steel fiber was found effective to prevent spalling but affected workability. The effective fiber type and dosage were recommended to prevent spalling and ensure sufficient workability for casting and pumping of the ultra-high performance concrete.En este trabajo se presentan los resultados más relevantes del trabajo experimental realizado para valorar la laminación y las propiedades mecánicas residuales de hormigón de ultra-altas prestaciones tras su exposición a altas temperaturas. La resistencia a la compresión del hormigón de ultra-altas prestaciones osciló entre 160 MPa~185 MPa. El objetivo de este estudio fue descubrir una manera eficaz de prevenir desprendimientos y/o laminaciones en este hormigón y medir sus propiedades mecánicas después de ser sometido al fuego. Las variables estudiadas fueron la presencia y dosificación de fibras, velocidad de calentamiento y condiciones de curado. Los resultados mostraron, tras la exposición a altas temperaturas, que la resistencia a compresión y el módulo de elasticidad del hormigón de ultra-altas prestaciones disminuían más lento que las de un hormigón con resistencia normal. La fibra de polipropileno resultó más eficaz para prevenir

Parametric Study On The CW Nd: YAG Laser Cutting Quality Of 1.25 mm Ultra Low Carbon Steel Sheets Using O2 Assist Gas

International Nuclear Information System (INIS)

Salem, Hanadi G.; Abbas, Wafaa A.; Mansour, Mohy S.; Badr, Yehia A.

2007-01-01

There are many non-linear interaction factors responsible for the performance of the laser cutting process. Identification of the dominant factors that significantly affect the cut quality is important. In the current research, the gas pressure, laser power and scanning speed were selected as the cutting parameters. Effect of the cutting parameters on the cut quality was investigated, by monitoring the variation in hardness, oxide layer width and microstructural changes within the heat affected zone (HAZ). Results revealed that good quality cuts can be produced in ultra low carbon steel thin sheets, using CW Nd:YAG laser at a window of scanning speed ranging from 1100-1500 mm/min at a minimum heat input of 337watts under an assisting O2 gas pressure of 5 bar. Higher laser power resulted in either strengthening or softening in the HAZ surrounding the cut kerf. The oxide layer width is not affected by the energy density input but rather affected by the O2 gas pressure due to exothermal reaction

High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

KAUST Repository

Sevilla, Galo T.; Almuslem, A. S.; Gumus, Abdurrahman; Hussain, Aftab M.; Hussain, Aftab M.; Cruz, Melvin; Hussain, Muhammad Mustafa

2016-01-01

shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using

XPS and angle resolved XPS, in the semiconductor industry: Characterization and metrology control of ultra-thin films

International Nuclear Information System (INIS)

Brundle, C.R.; Conti, Giuseppina; Mack, Paul

2010-01-01

This review discusses the development of X-ray photoelectron spectroscopy, XPS, used as a characterization and metrology method for ultra-thin films in the semiconductor wafer processing industry. After a brief explanation of how the relative roles of XPS and Auger electron spectroscopy, AES, have changed over the last 15 years or so in the semiconductor industry, we go into some detail as to what is implied by metrology, as opposed to characterization, for thin films in the industry, and then describe how XPS, and particularly angle resolved XPS, ARXPS, have been implemented as a metrology 'tool' for thickness, chemical composition, and non-destructive depth profiling, of transistor gate oxide material, a key requirement in front-end processing. We take a historical approach, dealing first with the early use for SiO 2 films on Si(1 0 0), then moving to silicon oxynitride, SiO x N y in detail, and finally and briefly HfO 2 -based material, which is used today in the most advanced devices (32 nm node).

Ultra-high pressure water jet: Baseline report

International Nuclear Information System (INIS)

1997-01-01

The ultra-high pressure waterjet technology was being evaluated at Florida International University (FIU) as a baseline technology. In conjunction with FIU's evaluation of efficiency and cost, this report covers the evaluation conducted for safety and health issues. It is a commercially available technology and has been used for various projects at locations throughout the country. The ultra-high pressure waterjet technology acts as a cutting tool for the removal of surface substrates. The Husky trademark pump feeds water to a lance that directs the high pressure water at the surface to be removed. The safety and health evaluation during the testing demonstration focused on two main areas of exposure. These were dust and noise. The dust exposure was found to be minimal, which would be expected due to the wet environment inherent in the technology, but noise exposure was at a significant level. Further testing for noise is recommended because of the outdoor environment where the testing demonstration took place. In addition, other areas of concern found were arm-hand vibration, ergonomics, heat stress, tripping hazards, electrical hazards, lockout/tagout, fall hazards, slipping hazards, hazards associated with the high pressure water, and hazards associated with air pressure systems

All-optical ultra-high-speed OFDM to Nyquist-WDM conversion

DEFF Research Database (Denmark)

Guan, Pengyu; Røge, Kasper Meldgaard; Mulvad, Hans Christian Hansen

2015-01-01

We propose an all-optical ultra-high-speed OFDM to Nyquist-WDM conversion scheme based on complete OFT. An 8-subcarrier 640 Gbit/s DPSK OFDM super-channel is converted to eight 80-Gbit/s Nyquist-WDM channels with BER <10−9 performance for all channels.......We propose an all-optical ultra-high-speed OFDM to Nyquist-WDM conversion scheme based on complete OFT. An 8-subcarrier 640 Gbit/s DPSK OFDM super-channel is converted to eight 80-Gbit/s Nyquist-WDM channels with BER

Ultra-high resolution flat-panel volume CT: fundamental principles, design architecture, and system characterization

International Nuclear Information System (INIS)

Gupta, Rajiv; Brady, Tom; Grasruck, Michael; Suess, Christoph; Schmidt, Bernhard; Stierstorfer, Karl; Popescu, Stefan; Flohr, Thomas; Bartling, Soenke H.

2006-01-01

Digital flat-panel-based volume CT (VCT) represents a unique design capable of ultra-high spatial resolution, direct volumetric imaging, and dynamic CT scanning. This innovation, when fully developed, has the promise of opening a unique window on human anatomy and physiology. For example, the volumetric coverage offered by this technology enables us to observe the perfusion of an entire organ, such as the brain, liver, or kidney, tomographically (e.g., after a transplant or ischemic event). By virtue of its higher resolution, one can directly visualize the trabecular structure of bone. This paper describes the basic design architecture of VCT. Three key technical challenges, viz., scatter correction, dynamic range extension, and temporal resolution improvement, must be addressed for successful implementation of a VCT scanner. How these issues are solved in a VCT prototype and the modifications necessary to enable ultra-high resolution volumetric scanning are described. The fundamental principles of scatter correction and dose reduction are illustrated with the help of an actual prototype. The image quality metrics of this prototype are characterized and compared with a multi-detector CT (MDCT). (orig.)

Ultra-high resolution flat-panel volume CT: fundamental principles, design architecture, and system characterization

Energy Technology Data Exchange (ETDEWEB)

Gupta, Rajiv; Brady, Tom [Massachusetts General Hospital, Department of Radiology, Founders House, FND-2-216, Boston, MA (United States); Grasruck, Michael; Suess, Christoph; Schmidt, Bernhard; Stierstorfer, Karl; Popescu, Stefan; Flohr, Thomas [Siemens Medical Solutions, Forchheim (Germany); Bartling, Soenke H. [Hannover Medical School, Department of Neuroradiology, Hannover (Germany)

2006-06-15

Digital flat-panel-based volume CT (VCT) represents a unique design capable of ultra-high spatial resolution, direct volumetric imaging, and dynamic CT scanning. This innovation, when fully developed, has the promise of opening a unique window on human anatomy and physiology. For example, the volumetric coverage offered by this technology enables us to observe the perfusion of an entire organ, such as the brain, liver, or kidney, tomographically (e.g., after a transplant or ischemic event). By virtue of its higher resolution, one can directly visualize the trabecular structure of bone. This paper describes the basic design architecture of VCT. Three key technical challenges, viz., scatter correction, dynamic range extension, and temporal resolution improvement, must be addressed for successful implementation of a VCT scanner. How these issues are solved in a VCT prototype and the modifications necessary to enable ultra-high resolution volumetric scanning are described. The fundamental principles of scatter correction and dose reduction are illustrated with the help of an actual prototype. The image quality metrics of this prototype are characterized and compared with a multi-detector CT (MDCT). (orig.)

Self organized striping in ultra thin polymer films near melt: An investigation using Monte Carlo simulation

Science.gov (United States)

Singh, Satya Pal

2018-05-01

This paper work presents the results of Monte Carlo simulation performed for ultra thin short chained polymer films near melt, under strong confinement. Thin polymer films get ruptured when annealed above their glass transition temperatures. The pattern formations are generally explained on the basis of spinodal mechanism, if the thickness of the film is of the order of few tens of nanometers i.e. film seems to tear apart in strips. The free end segments of the chains are more dynamic and coalescence into one another. This process seems to dominate over the spinodal waves resulting into a different type of dynamics. Polymer chains with 30 monomers are taken. 160, 200 and 240 chains are taken for three different cases of the studies. The three cases correspond to three different thickness of the films with 8, 10 and 12 layers of chains along direction perpendicular to the confining substrates. The bottom surface has affinity to monomers, whereas the upper surface has hard wall interaction with the monomers. Different time micrographs of the films are plotted along with density distributions of the monomers to explore the process.

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

International Nuclear Information System (INIS)

Yeon Kwon, Jang; Kyeong Jeong, Jae

2015-01-01

This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed. (invited review)

Large superconducting detector magnets with ultra thin coils for use in high energy accelerators and storage rings

International Nuclear Information System (INIS)

Green, M.A.

1977-08-01

The development of a new class of large superconducting solenoid magnets is described. High energy physics on colliding beam machines sometimes require the use of thin coil solenoid magnets. The development of these magnets has proceeded with the substitution of light materials for heavy materials and by increasing the current density in the coils. The Lawrence Berkeley Laboratory has developed a radical approach to the problem by having the coil operate at very high current densities. This approach and its implications are described in detail

Multispectral surface plasmon resonance approach for ultra-thin silver layer characterization: Application to top-emitting OLED cathode

Science.gov (United States)

Taverne, S.; Caron, B.; Gétin, S.; Lartigue, O.; Lopez, C.; Meunier-Della-Gatta, S.; Gorge, V.; Reymermier, M.; Racine, B.; Maindron, T.; Quesnel, E.

2018-01-01

While dielectric/metal/dielectric (DMD) multilayer thin films have raised considerable interest as transparent and conductive electrodes in various optoelectronic devices, the knowledge of optical characteristics of thin metallic layers integrated in such structures is still rather approximate. The multispectral surface plasmon resonance characterization approach described in this work precisely aims at providing a rigorous methodology able to accurately determine the optical constants of ultra-thin metallic films. As a practical example, the refractive index and extinction dispersion curves of 8 to 25 nm-thick silver layers have been investigated. As a result, their extreme dependence on the layer thickness is highlighted, in particular in a thickness range close to the critical threshold value (˜10 nm) where the silver film becomes continuous and its electrical conductance/optical transmittance ratio particularly interesting. To check the validity of the revisited Ag layers constant dispersion curves deduced from this study, they were introduced into a commercial optical model software to simulate the behavior of various optoelectronic building blocks from the simplest ones (DMD electrodes) to much more complex structures [full organic light emitting device (OLED) stacks]. As a result, a much better prediction of the emission spectrum profile as well as the angular emission pattern of top-emitting OLEDs is obtained. On this basis, it is also shown how a redesign of the top encapsulation thin film of OLEDs is necessary to better take benefit from the advanced DMD electrode. These results should particularly interest the micro-OLED display field where bright and directive single color pixel emission is required.

Modelling the effects of the radiation reaction force on the interaction of thin foils with ultra-intense laser fields

Science.gov (United States)

Duff, M. J.; Capdessus, R.; Del Sorbo, D.; Ridgers, C. P.; King, M.; McKenna, P.

2018-06-01

The effects of the radiation reaction (RR) force on thin foils undergoing radiation pressure acceleration (RPA) are investigated. Using QED-particle-in-cell simulations, the influence of the RR force on the collective electron dynamics within the target can be examined. The magnitude of the RR force is found to be strongly dependent on the target thickness, leading to effects which can be observed on a macroscopic scale, such as changes to the distribution of the emitted radiation and the target dynamics. This suggests that such parameters may be controlled in experiments at multi-PW laser facilities. In addition, the effects of the RR force are characterized in terms of an average radiation emission angle. We present an analytical model which, for the first time, describes the effect of the RR force on the collective electron dynamics within the ‘light-sail’ regime of RPA. The predictions of this model can be tested in future experiments with ultra-high intensity lasers interacting with solid targets.

Ultra Fast, High Rep Rate, High Voltage Spark Gap Pulser

Science.gov (United States)

1995-07-01

current rise time. The spark gap was designed to have a coaxial geometry reducing its inductance. Provisions were made to pass flowing gas between the...ULTRA FAST, HIGH REP RATE, HIGH VOLTAGE SPARK GAP PULSER Robert A. Pastore Jr., Lawrence E. Kingsley, Kevin Fonda, Erik Lenzing Electrophysics and...Modeling Branch AMSRL-PS-EA Tel.: (908)-532-0271 FAX: (908)-542-3348 U.S. Army Research Laboratory Physical Sciences Directorate Ft. Monmouth

The share of ultra-processed foods and the overall nutritional quality of diets in the US: evidence from a nationally representative cross-sectional study.

Science.gov (United States)

Martínez Steele, Euridice; Popkin, Barry M; Swinburn, Boyd; Monteiro, Carlos A

2017-02-14

Recent population dietary studies indicate that diets rich in ultra-processed foods, increasingly frequent worldwide, are grossly nutritionally unbalanced, suggesting that the dietary contribution of these foods largely determines the overall nutritional quality of contemporaneous diets. Yet, these studies have focused on individual nutrients (one at a time) rather than the overall nutritional quality of the diets. Here we investigate the relationship between the energy contribution of ultra-processed foods in the US diet and its content of critical nutrients, individually and overall. We evaluated dietary intakes of 9,317 participants from 2009 to 2010 NHANES aged 1+ years. Food items were classified into unprocessed or minimally processed foods, processed culinary ingredients, processed foods, and ultra-processed foods. First, we examined the average dietary content of macronutrients, micronutrients, and fiber across quintiles of the energy contribution of ultra-processed foods. Then, we used Principal Component Analysis (PCA) to identify a nutrient-balanced dietary pattern to enable the assessment of the overall nutritional quality of the diet. Linear regression was used to explore the association between the dietary share of ultra-processed foods and the balanced-pattern PCA factor score. The scores were thereafter categorized into tertiles, and their distribution was examined across ultra-processed food quintiles. All models incorporated survey sample weights and were adjusted for age, sex, race/ethnicity, family income, and educational attainment. The average content of protein, fiber, vitamins A, C, D, and E, zinc, potassium, phosphorus, magnesium, and calcium in the US diet decreased significantly across quintiles of the energy contribution of ultra-processed foods, while carbohydrate, added sugar, and saturated fat contents increased. An inverse dose-response association was found between ultra-processed food quintiles and overall dietary quality measured

Fast and sensitive analysis of beta blockers by ultra-high-performance liquid chromatography coupled with ultra-high-resolution TOF mass spectrometry.

Science.gov (United States)

Tomková, Jana; Ondra, Peter; Kocianová, Eva; Václavík, Jan

2017-07-01

This paper presents a method for the determination of acebutolol, betaxolol, bisoprolol, metoprolol, nebivolol and sotalol in human serum by liquid-liquid extraction and ultra-high-performance liquid chromatography coupled with ultra-high-resolution TOF mass spectrometry. After liquid-liquid extraction, beta blockers were separated on a reverse-phase analytical column (Acclaim RS 120; 100 × 2.1 mm, 2.2 μm). The total run time was 6 min for each sample. Linearity, limit of detection, limit of quantification, matrix effects, specificity, precision, accuracy, recovery and sample stability were evaluated. The method was successfully applied to the therapeutic drug monitoring of 108 patients with hypertension. This method was also used for determination of beta blockers in 33 intoxicated patients. Copyright © 2016 John Wiley & Sons, Ltd.

Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

Science.gov (United States)

Patra, Chandralina; Das, Debajyoti

2018-04-01

Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

Status of Ultra-High Energy Cosmic Rays

CERN Multimedia

CERN. Geneva

2015-01-01

I will review the recent results on Ultra-High energy cosmic rays obtained by the Auger and Telescope Array Observatories, and discuss some of the Astrophysical scenarios that could account for them, a connection with LHC results  as well as the possible connections to neutrino and gamma ray observations.

Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

Science.gov (United States)

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-01

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

Imaging Frontostriatal Function in Ultra-High-Risk, Early, and Chronic Schizophrenia During Executive Processing

Science.gov (United States)

Morey, Rajendra A.; Inan, Seniha; Mitchell, Teresa V.; Perkins, Diana O.; Lieberman, Jeffrey A.; Belger, Aysenil

2009-01-01

Context Individuals experiencing prodromal symptoms of schizophrenia (ultra-high-risk group) demonstrate impaired performance on tasks of executive function, attention, and working memory. The neurobiological underpinnings of such executive deficits in ultra-high-risk individuals remains unclear. Objective We assessed frontal and striatal functions during a visual oddball continuous performance task, in ultra-high-risk, early, and chronic schizophrenic patients with the use of functional magnetic resonance imaging. Design Cross-sectional case-control design. Setting Community; outpatient clinic. Patients Fifty-two individuals (control, n = 16; ultra-high risk, n = 10; early, n = 15; chronic, n = 11) from a referred clinical sample and age- and sex-matched control volunteers underwent scanning. Main Outcome Measures Percentage of active voxels and percentage signal change calculated for the anterior cingulate gyrus (ACG), middle frontal gyrus (MFG), inferior frontal gyrus (IFG), basal ganglia, and thalamus. Performance on the visual oddball task was measured with percentage of hits and d′ (a measure based on the hit rate and the false-alarm rate). Results The ultra-high-risk group showed significantly smaller differential activation between task-relevant and task-irrelevant stimuli in the frontal regions (ACG, IFG, MFG) than the control group. Frontostriatal activation associated with target stimuli in the early and chronic groups was significantly lower than the control group, while the ultra-high-risk group showed a trend toward the early group. Conclusions Our findings suggest that prefrontal function begins to decline before the onset of syndromally defined illness and hence may represent a vulnerability marker in assessing the risk of developing psychotic disorders among ultra-high-risk individuals. PMID:15753238

High Heat Load Properties of Ultra Fine Grain Tungsten

International Nuclear Information System (INIS)

Zhou, Z.; Du, J.; Ge, C.; Linke, J.; Pintsuk, G.; Song, S.X.

2007-01-01

Full text of publication follows: Tungsten is increasingly considered as a promising candidate armour materials facing the plasma in tokamaks for medium to high heat flux components (EAST, ASDEX, ITER). Fabrication tungsten with ultra fine grain size is considered as an effective way to ameliorate some disadvantages of tungsten, such as its brittleness at room temperature. But the research data on the performance of ultra fine grain tungsten is still very limit. In this work, high heat load properties of pure ultra-fine grain tungsten have been studied. The ultra fine grain tungsten samples with average grain size of 0.2 μm, 1 μm and 3 μm were fabricated by resistance sintering under ultra high pressure. The annealing experiments for the investigation of the material resistance against grain growth have been done by annealing samples in a vacuum furnace at different temperature holding for 2 hours respectively. It is found that recrystallization and grain growth occur at heating temperature of 1250 deg. c. The finer the initial grain sizes of tungsten, the smaller its grain growth grain. The effects of transient high thermal loads (off normal events like disruptions) on tungsten surface morphology have been performed in electron beam test facility JUDITH. The thermal loads tests have been carried out with 4 ms pulses at different power density of 0.22, 0.33, 0.44, 0.55 and 0.88 GW/m 2 respectively. Horizontal cracks formed for all tungsten samples at 0.44 GW/m 2 . Particle erosions occurred for tungsten with 3 μm size at 0.33 GW/m 2 and for tungsten with 0.2 and 1 μm size at 0.55 GW/m 2 . The weight loss of tungsten with 0.2, 1 and 3 μm size are 2,0.1,0.6 mg respectively at 0.88 GW/m 2 . The effects of a large number of very short transient repetitive thermal loads (ELM-like) on tungsten surface morphology also have been performed by using a fundamental wave of a YAG laser. It is found that tungsten with 0.2 μm size has the best performance. (authors)

High Heat Load Properties of Ultra Fine Grain Tungsten

Energy Technology Data Exchange (ETDEWEB)

Zhou, Z.; Du, J.; Ge, C. [Lab. of Special Ceramic and P/M, University of Science and Technology, 100083 Beijing (China); Linke, J.; Pintsuk, G. [FZJ-Forschungszentrum Juelich GmbH, Association Euratom-FZJ, Institut fur Plasmaphysik, Postfach 1913, D-52425 Juelich (Germany); Song, S.X. [Research Center on Fusion Materials (RCFM), University of Science and Technology Beijing (USTB), 100083 Beijing (China)

2007-07-01

Full text of publication follows: Tungsten is increasingly considered as a promising candidate armour materials facing the plasma in tokamaks for medium to high heat flux components (EAST, ASDEX, ITER). Fabrication tungsten with ultra fine grain size is considered as an effective way to ameliorate some disadvantages of tungsten, such as its brittleness at room temperature. But the research data on the performance of ultra fine grain tungsten is still very limit. In this work, high heat load properties of pure ultra-fine grain tungsten have been studied. The ultra fine grain tungsten samples with average grain size of 0.2 {mu}m, 1 {mu}m and 3 {mu}m were fabricated by resistance sintering under ultra high pressure. The annealing experiments for the investigation of the material resistance against grain growth have been done by annealing samples in a vacuum furnace at different temperature holding for 2 hours respectively. It is found that recrystallization and grain growth occur at heating temperature of 1250 deg. c. The finer the initial grain sizes of tungsten, the smaller its grain growth grain. The effects of transient high thermal loads (off normal events like disruptions) on tungsten surface morphology have been performed in electron beam test facility JUDITH. The thermal loads tests have been carried out with 4 ms pulses at different power density of 0.22, 0.33, 0.44, 0.55 and 0.88 GW/m{sup 2} respectively. Horizontal cracks formed for all tungsten samples at 0.44 GW/m{sup 2}. Particle erosions occurred for tungsten with 3 {mu}m size at 0.33 GW/m{sup 2} and for tungsten with 0.2 and 1 {mu}m size at 0.55 GW/m{sup 2}. The weight loss of tungsten with 0.2, 1 and 3 {mu}m size are 2,0.1,0.6 mg respectively at 0.88 GW/m{sup 2}. The effects of a large number of very short transient repetitive thermal loads (ELM-like) on tungsten surface morphology also have been performed by using a fundamental wave of a YAG laser. It is found that tungsten with 0.2 {mu}m size has

UV light induced insulator-metal transition in ultra-thin ZnO/TiO{sub x} stacked layer grown by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

2016-08-28

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality

Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

Science.gov (United States)

Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

2018-04-01

Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

International Nuclear Information System (INIS)

Hart, John; Hazbun, Ramsey; Eldridge, David; Hickey, Ryan; Fernando, Nalin; Adam, Thomas; Zollner, Stefan; Kolodzey, James

2016-01-01

Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak

High rate response of ultra-high-performance fiber-reinforced concretes under direct tension

Energy Technology Data Exchange (ETDEWEB)

Tran, Ngoc Thanh [Department of Civil and Environmental Engineering, Sejong University, 98 Gunja-Dong, Gwangjin-Gu, Seoul 143-747 (Korea, Republic of); Tran, Tuan Kiet [Department of Civil and Environmental Engineering, Sejong University, 98 Gunja-Dong, Gwangjin-Gu, Seoul 143-747 (Korea, Republic of); Department of Civil Engineering and Applied Mechanics, Ho Chi Minh City University of Technology and Education, 01 Vo Van Ngan, Thu Duc District, Ho Chi Minh City (Viet Nam); Kim, Dong Joo, E-mail: djkim75@sejong.ac.kr [Department of Civil and Environmental Engineering, Sejong University, 98 Gunja-Dong, Gwangjin-Gu, Seoul 143-747 (Korea, Republic of)

2015-03-15

The tensile response of ultra-high-performance fiber-reinforced concretes (UHPFRCs) at high strain rates (5–24 s{sup −} {sup 1}) was investigated. Three types of steel fibers, including twisted, long and short smooth steel fibers, were added by 1.5% volume content in an ultra high performance concrete (UHPC) with a compressive strength of 180 MPa. Two different cross sections, 25 × 25 and 25 × 50 mm{sup 2}, of tensile specimens were used to investigate the effect of the cross section area on the measured tensile response of UHPFRCs. Although all the three fibers generated strain hardening behavior even at high strain rates, long smooth fibers produced the highest tensile resistance at high rates whereas twisted fiber did at static rate. The breakages of twisted fibers were observed from the specimens tested at high strain rates unlike smooth steel fibers. The tensile behavior of UHPFRCs at high strain rates was clearly influenced by the specimen size, especially in post-cracking strength.

Ultra light weight refractory material for high temperature applications

Energy Technology Data Exchange (ETDEWEB)

Finke, V.; Kern, H. [Rath GmbH, Meissen (Germany); Springer, M. [Aug. Rath jun. GmbH, Vienna (Austria)

2007-07-01

The requirements on companies running high temperature processes, i.e. at temperatures about 1000 C and above, have increased dramatically within the last few years. For technological, economical and ecological purposes each application has to be checked carefully. As well the political discussion regarding environmental pollution, greenhouse effect and emission trading and the guidelines for climate and environmental protection exert massive influence on thermal process technology and pose an appropriate challenge for the companies. Next to costs of labour and raw materials the costs for energy and environmental costs play a decisive role more and more. The pressure on the management thereby incurred may have a lasting effect on innovations regarding increase of energy efficiency, decrease of CO{sub 2}-emission and often on non negligible increase of productivity. Mainly against the background of the highly scheduled European aims for emission reduction and also in consideration of the still proceeding globalisation the usage of state-of-the-art refractory technics in thermal process technology is of particular importance for business success, for reducing of environmental impact and last but not least for conservation and safeguarding of jobs in Europe and Germany. The applications for products made from high-temperature insulation wool in high temperature applications have strongly increased during the last five years. Especially the production capacities of polycrystalline wool (aluminium oxide wool e.g. Altra B72) have been doubled within the last three years. Primarily ultra light weight products made from HTIW are used in industrial furnaces with application temperatures above 1000 C and / or with high thermo-mechanical (thermal shock) and chemical exposure. The outstanding and essential advantages of these materials are obviously: Ultra light weight material with high resilience and flexibility, Optimised energy consumption (energy saving up to 50% compared

Soliton-based ultra-high speed optical communications

Indian Academy of Sciences (India)

All these facts are the outcome of research on optical solitons in fibers in spite of the fact that the commonly used RZ format is not always called a soliton format. The overview presented here attempts to incorporate the role of soliton-based communications research in present day ultra-high speed communications.

Novel technique of making thin target foil of high density material via rolling method

Science.gov (United States)

Gupta, C. K.; Rohilla, Aman; Singh, R. P.; Singh, Gurjot; Chamoli, S. K.

2018-05-01

The conventional rolling method fails to yield good quality thin foils of thicknesses less than 2 mg/cm2 for high density materials with Z ≥ 70 (e.g. gold, lead). A special and improved technique has been developed to obtain such low thickness good quality gold foils by rolling method. Using this technique thin gold foils of thickness in the range of 0.850-2.5 mg/cm2 were obtained in the present work. By making use of alcohol during rolling, foils of thickness 1 mg/cm2 can be obtained in shorter time with less effort.

Ion irradiation of AZO thin films for flexible electronics

Energy Technology Data Exchange (ETDEWEB)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Alberti, Alessandra [CNR-IMM, via Strada VIII 5, 95121 Catania (Italy); Mirabella, Salvatore; Ruffino, Francesco [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Terrasi, Antonio, E-mail: antonio.terrasi@ct.infn.it [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy)

2017-02-01

Highlights: • Evidence of electrical good quality AZO ultra thin films without thermal annealing. • Evidence of the main role of Oxygen vs. structural parameters in controlling the electrical performances of AZO. • Evidence of the role of the ion irradiation in improving the electrical properties of AZO ultra thin films. • Synthesis of AZO thin films on flexible/plastic substrates with good electrical properties without thermal processes. - Abstract: Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O{sup +} or Ar{sup +} ion beams (30–350 keV, 3 × 10{sup 15}–3 × 10{sup 16} ions/cm{sup 2}) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

Specific heat measurement set-up for quench condensed thin superconducting films.

Science.gov (United States)

Poran, Shachaf; Molina-Ruiz, Manel; Gérardin, Anne; Frydman, Aviad; Bourgeois, Olivier

2014-05-01

We present a set-up designed for the measurement of specific heat of very thin or ultra-thin quench condensed superconducting films. In an ultra-high vacuum chamber, materials of interest can be thermally evaporated directly on a silicon membrane regulated in temperature from 1.4 K to 10 K. On this membrane, a heater and a thermometer are lithographically fabricated, allowing the measurement of heat capacity of the quench condensed layers. This apparatus permits the simultaneous thermal and electrical characterization of successively deposited layers in situ without exposing the deposited materials to room temperature or atmospheric conditions, both being irreversibly harmful to the samples. This system can be used to study specific heat signatures of phase transitions through the superconductor to insulator transition of quench condensed films.

Local variation of fragility and glass transition temperature of ultra-thin supported polymer films.

Science.gov (United States)

Hanakata, Paul Z; Douglas, Jack F; Starr, Francis W

2012-12-28

Despite extensive efforts, a definitive picture of the glass transition of ultra-thin polymer films has yet to emerge. The effect of film thickness h on the glass transition temperature T(g) has been widely examined, but this characterization does not account for the fragility of glass-formation, which quantifies how rapidly relaxation times vary with temperature T. Accordingly, we simulate supported polymer films of a bead-spring model and determine both T(g) and fragility, both as a function of h and film depth. We contrast changes in the relaxation dynamics with density ρ and demonstrate the limitations of the commonly invoked free-volume layer model. As opposed to bulk polymer materials, we find that the fragility and T(g) do not generally vary proportionately. Consequently, the determination of the fragility profile--both locally and for the film as a whole--is essential for the characterization of changes in film dynamics with confinement.

Ultra high energy cosmic rays and magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Stanev, Todor; Engel, Ralph; Alvarez-Muniz, Jaime; Seckel, David

2002-07-01

We follow the propagation of ultra high energy protons in the presence of random and regular magnetic fields and discuss some of the changes in the angular and energy distributions of these particles introduced by the scattering in the magnetic fields.

Ultra high energy cosmic rays and magnetic fields

International Nuclear Information System (INIS)

Stanev, Todor; Engel, Ralph; Alvarez-Muniz, Jaime; Seckel, David

2002-01-01

We follow the propagation of ultra high energy protons in the presence of random and regular magnetic fields and discuss some of the changes in the angular and energy distributions of these particles introduced by the scattering in the magnetic fields

Effects of DC gate and drain bias stresses on the degradation of excimer laser crystallized polysilicon thin film transistors

International Nuclear Information System (INIS)

Kouvatsos, D N; Michalas, L; Voutsas, A T; Papaioannou, G J

2005-01-01

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V GS = V DS /2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated grains resulted in similar threshold voltage shift but in substantially decreased subthreshold swing and transconductance degradation. The immunity of ultra-thin active layer devices to degradation under hot carrier stress clearly suggests the implementation of ultra thin SLS ELA polysilicon films for the fabrication of TFTs exhibiting not only high performance but, especially, the high reliability needed for integrated systems on panel

Collective Behavior of Amoebae in Thin Films

Science.gov (United States)

Bae, Albert

2005-03-01

We have discovered new aspects of social behavior in Dictyostelium discoideum by culturing high density colonies in liquid media depleted of nutrients in confined geometries by using three different preparations: I. thin (15-40um thick) and II. ultrathin (behavior of cells despite flattening that increased their areas by over an order of magnitude. We also observed that the earliest synchronized response of cells following the onset of starvation, a precursor to aggregation, was hastened by reducing the thickness of the aqueous culture layer. We were surprised to find that the threshold concentration for aggregation was raised by thin film confinement when compared to bulk behavior. Finally, both the ultra thin and microfluidic preparations reveal, with new clarity, vortex states of aggregation.

Specific features of high-cycle and ultra-high-cycle fatigue

Czech Academy of Sciences Publication Activity Database

Lukáš, Petr; Kunz, Ludvík

2002-01-01

Roč. 25, - (2002), s. 747-753 ISSN 8756-758X R&D Projects: GA AV ČR KSK1010104; GA AV ČR IAA2041002 Institutional research plan: CEZ:AV0Z2041904 Keywords : ultra high cycle fatigue * fatigue mechanisms * cyclic plastic deformation Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 0.701, year: 2002

Dual-side and three-dimensional microelectrode arrays fabricated from ultra-thin silicon substrates

International Nuclear Information System (INIS)

Du, Jiangang; Masmanidis, Sotiris C; Roukes, Michael L

2009-01-01

A method for fabricating planar implantable microelectrode arrays was demonstrated using a process that relied on ultra-thin silicon substrates, which ranged in thickness from 25 to 50 µm. The challenge of handling these fragile materials was met via a temporary substrate support mechanism. In order to compensate for putative electrical shielding of extracellular neuronal fields, separately addressable electrode arrays were defined on each side of the silicon device. Deep reactive ion etching was employed to create sharp implantable shafts with lengths of up to 5 mm. The devices were flip-chip bonded onto printed circuit boards (PCBs) by means of an anisotropic conductive adhesive film. This scalable assembly technique enabled three-dimensional (3D) integration through formation of stacks of multiple silicon and PCB layers. Simulations and measurements of microelectrode noise appear to suggest that low impedance surfaces, which could be formed by electrodeposition of gold or other materials, are required to ensure an optimal signal-to-noise ratio as well a low level of interchannel crosstalk

Particle Induced X-ray Emission (PIXE) Approach for the Quantification of Thin Al Films

International Nuclear Information System (INIS)

Younes, G; Zahraman, K; Nsouli, B; Soueidan, M; Ferro, G

2008-01-01

Particle Induced X-ray Emission (PIXE) has been used as a fast and non-destructive technique for sensitive characterization of ultra thin Al films deposited by evaporation onto Si substrate. In this work the PIXE technique was optimized, using proton beam at different energies and different angles of incidence, for the characterization of ultra thin Al films (few nanometers) deposited onto Si substrate. The PIXE results showed that a proton beam of 300 keV under tilting angle of 80 degree permits an accurate determination of Al with high sensitivity within few minutes of acquisition time and a LOD of less than 0.2 nm. The LOD versus energy and tilting angle will be presented and discussed. (author)

Ultra High Fluence Radiation Monitoring Technology for the Future Circular Collider at CERN

CERN Document Server

Gorine, Georgi; Mandic, Igor; Jazbec, Anže; Snoj, Luka; Capeans, Mar; Moll, Michael; Bouvet, Didier; Ravotti, Federico; Sallese, Jean-Michel

2018-01-01

The Future Circular Collider (FCC) is foreseen as the next generation ~100 km long synchrotron to be built in the Geneva area starting 2050. This machine is expected to reach an energy level of 100 TeV generating unprecedented radiation levels >100 times higher than in today`s Large Hadron Collider (LHC). Current Radiation Monitoring system, like the RADMONs employed in the LHC, will not be capable to function and withstand this harsh environment. The development of a new Ultra High Fluence and Dose Radiation Sensor is a key element to allow irradiation tests of FCC equipment and, at a later stage, to monitor radiation levels in the FCC itself. In this paper, we present an innovative dosimetry solution based on thin layers of metals, which resistivity is shown to increase significantly due to the accumulated displacement damage. After describing the fabrication techniques used to manufacture these Radiation Dependent Resistors (RDR), we show and discuss the results of the irradiation experiments carried out ...

Benchmarking Pt and Pt-lanthanide sputtered thin films for oxygen electroreduction

DEFF Research Database (Denmark)

Zamburlini, Eleonora; Jensen, Kim Degn; Stephens, Ifan E.L.

2017-01-01

Platinum-lanthanide alloys are very promising as active and stable catalysts for the oxygen reduction reaction (ORR) in low-temperature fuel cells. We have fabricated Pt and Pt5Gd metallic thin films via (co-)sputtering deposition in an ultra-high vacuum (UHV) chamber. The electrochemical ORR...

Laser beam welding of new ultra-high strength and supra-ductile steels

OpenAIRE

Dahmen, M.

2015-01-01

Ultra-high strength and supra-ductile are entering fields of new applications. Those materials are excellent candidates for modern light-weight construction and functional integration. As ultra-high strength steels the stainless martensitic grade 1.4034 and the bainitic steel UNS 53835 are investigated. For the supra-ductile steels stand two high austenitic steels with 18 and 28 % manganese. As there are no processing windows an approach from the metallurgical base on is required. Adjusting t...

Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

2014-05-15

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

Functional aluminum alloys for ultra high vacuum use

International Nuclear Information System (INIS)

Kato, Yutaka; Tsukamoto, Kenji; Isoyama, Eizo

1985-01-01

Ultra high vacuum systems made of aluminum alloys are actively developed. The reasons for using aluminum alloys are low residual radioactivity, light weight, good machinability, good thermal conductivity, non-magnetism. The important function required for ultra high vacuum materials is low outgassing rate, but surface gas on ordinary aluminum is much. Then the research on aluminum surface structure with low outgassing rate has been made and the special extrusion method, that is, extrusion method with the conditions of preventing air from entering inside of pipe and of taking in mixture gas of Ar + O 2 , was developed. 6063 alloy obtained by special extrusion method showed low outgassing rate (2 x 10 -13 Torr. 1/s. cm 2 ) by only 150 deg C, 24 h baking. For the future it will be important to develop aluminum alloys with low dynamic outgassing rate as well as low static outgassing rate. (author)

Well-constructed cellulose acetate membranes for forward osmosis: Minimized internal concentration polarization with an ultra-thin selective layer

KAUST Repository

Zhang, Sui

2010-09-01

The design and engineering of membrane structure that produces low salt leakage and minimized internal concentration polarization (ICP) in forward osmosis (FO) processes have been explored in this work. The fundamentals of phase inversion of cellulose acetate (CA) regarding the formation of an ultra-thin selective layer at the bottom interface of polymer and casting substrate were investigated by using substrates with different hydrophilicity. An in-depth understanding of membrane structure and pore size distribution has been elucidated with field emission scanning electronic microscopy (FESEM) and positron annihilation spectroscopy (PAS). A double dense-layer structure is formed when glass plate is used as the casting substrate and water as the coagulant. The thickness of the ultra-thin bottom layer resulted from hydrophilic-hydrophilic interaction is identified to be around 95nm, while a fully porous, open-cell structure is formed in the middle support layer due to spinodal decomposition. Consequently, the membrane shows low salt leakage with mitigated ICP in the FO process for seawater desalination. The structural parameter (St) of the membrane is analyzed by modeling water flux using the theory that considers both external concentration polarization (ECP) and ICP, and the St value of the double dense-layer membrane is much smaller than those reported in literatures. Furthermore, the effects of an intermediate immersion into a solvent/water mixed bath prior to complete immersion in water on membrane formation have been studied. The resultant membranes may have a single dense layer with an even lower St value. A comparison of fouling behavior in a simple FO-membrane bioreactor (MBR) system is evaluated for these two types of membranes. The double dense-layer membrane shows a less fouling propensity. This study may help pave the way to improve the membrane design for new-generation FO membranes. © 2010 Elsevier B.V.

Self-assembly of dodecaphenyl POSS thin films

Science.gov (United States)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Laser beam welding of new ultra-high strength and supra-ductile steels

Science.gov (United States)

Dahmen, Martin

2015-03-01

Ultra-high strength and supra-ductile are entering fields of new applications. Those materials are excellent candidates for modern light-weight construction and functional integration. As ultra-high strength steels the stainless martensitic grade 1.4034 and the bainitic steel UNS 53835 are investigated. For the supra-ductile steels stand two high austenitic steels with 18 and 28 % manganese. As there are no processing windows an approach from the metallurgical base on is required. Adjusting the weld microstructure the Q+P and the QT steels require weld heat treatment. The HSD steel is weldable without. Due to their applications the ultra-high strength steels are welded in as-rolled and strengthened condition. Also the reaction of the weld on hot stamping is reflected for the martensitic grades. The supra-ductile steels are welded as solution annealed and work hardened by 50%. The results show the general suitability for laser beam welding.

The Time Lens Concept Applied to Ultra-High-Speed OTDM Signal Processing

DEFF Research Database (Denmark)

Clausen, Anders; Palushani, Evarist; Mulvad, Hans Christian Hansen

2013-01-01

This survey paper presents some of the applications where the versatile time-lens concept successfully can be applied to ultra-high-speed serial systems by offering expected needed functionalities for future optical communication networks.......This survey paper presents some of the applications where the versatile time-lens concept successfully can be applied to ultra-high-speed serial systems by offering expected needed functionalities for future optical communication networks....

Ultra high performance liquid chromatography of seized drugs

NARCIS (Netherlands)

Lurie, I.S.

2010-01-01

The primary goal of this thesis is to investigate the use of ultra high performance liquid chromatography (UHPLC) for the analysis of seized drugs. This goal was largely achieved and significant progress was made in achieving improved separation and detection of drugs of forensic interest.

Arc Shape Characteristics with Ultra-High-Frequency Pulsed Arc Welding

Directory of Open Access Journals (Sweden)

Mingxuan Yang

2017-01-01

Full Text Available Arc plasma possesses a constriction phenomenon with a pulsed current. The constriction is created by the Lorentz force, the radial electromagnetic force during arc welding, which determines the energy distribution of the arc plasma. Welding experiments were carried out with ultra-high-frequency pulsed arc welding (UHFP-AW. Ultra-high-speed camera observations were produced for arc surveillance. Hue-saturation-intensity (HSI image analysis was used to distinguish the regions of the arc plasma that represented the heat energy distribution. The measurement of arc regions indicated that, with an ultra-high-frequency pulsed arc, the constriction was not only within the decreased arc geometry, but also within the constricted arc core region. This can be checked by the ratio of the core region to the total area. The arc core region expanded significantly at 40 kHz at 60 A. A current level of 80 A caused a decrease in the total region of the arc. Meanwhile, the ratio of the core region to the total increased. It can be concluded that arc constriction depends on the increased area of the core region with the pulsed current (>20 kHz.

Manganese oxide micro-supercapacitors with ultra-high areal capacitance

Science.gov (United States)

Wang, Xu; Myers, Benjamin D.; Yan, Jian; Shekhawat, Gajendra; Dravid, Vinayak; Lee, Pooi See

2013-05-01

A symmetric micro-supercapacitor is constructed by electrochemically depositing manganese oxide onto micro-patterned current collectors. High surface-to-volume ratio of manganese oxide and short diffusion distance between electrodes give an ultra-high areal capacitance of 56.3 mF cm-2 at a current density of 27.2 μA cm-2.A symmetric micro-supercapacitor is constructed by electrochemically depositing manganese oxide onto micro-patterned current collectors. High surface-to-volume ratio of manganese oxide and short diffusion distance between electrodes give an ultra-high areal capacitance of 56.3 mF cm-2 at a current density of 27.2 μA cm-2. Electronic supplementary information (ESI) available: Experimental procedures; optical images of micro-supercapacitors; areal capacitances of samples M-0.3C, M-0.6C and M-0.9C; illustration of interdigital finger electrodes; Nyquist plot of Co(OH)2 deposited on micro-electrodes. See DOI: 10.1039/c3nr00210a

Ultra-High-Energy Cosmic Rays

CERN Document Server

Dova, M.T.

2015-05-22

The origin of the ultra high energy cosmic rays (UHECR) with energies above E > 10 17 eV, is still unknown. The discovery of their sources will reveal the engines of the most energetic astrophysical accelerators in the universe. This is a written version of a series of lectures devoted to UHECR at the 2013 CERN-Latin-American School of High-Energy Physics. We present anintroduction to acceleration mechanisms of charged particles to the highest energies in astrophysical objects, their propagation from the sources to Earth, and the experimental techniques for their detection. We also discuss some of the relevant observational results from Telescope Array and Pierre Auger Observatory. These experiments deal with particle interactions at energies orders of magnitude higher than achieved in terrestrial accelerators.

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

Science.gov (United States)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

SimProp: a simulation code for ultra high energy cosmic ray propagation

International Nuclear Information System (INIS)

Aloisio, R.; Grillo, A.F.; Boncioli, D.; Petrera, S.; Salamida, F.

2012-01-01

A new Monte Carlo simulation code for the propagation of Ultra High Energy Cosmic Rays is presented. The results of this simulation scheme are tested by comparison with results of another Monte Carlo computation as well as with the results obtained by directly solving the kinetic equation for the propagation of Ultra High Energy Cosmic Rays. A short comparison with the latest flux published by the Pierre Auger collaboration is also presented

Development of highly flexible and ultra-low permeation rate thin-film barrier structure for organic electronics

International Nuclear Information System (INIS)

Kim, Namsu; Graham, Samuel

2013-01-01

A flexible thin-film encapsulation architecture for organic electronics was built and consisted of a silicon oxide/alumina and parylene layer deposited over Ca sensors on a barrier-coated polyethylene terephthalate substrate. The film's effective water vapor transmission rate was 2.4 ± 1.5 × 10 −5 g/m 2 /day at 20 °C and 50% relative humidity. Flexural tests revealed that for films deposited on the polyethylene terephthalate substrate, the barrier layer failed due to cracking at a curvature radius of 6.4 mm, corresponding to a strain of 0.8%. Adding an epoxy top coat of suitable thickness shifted the neutral axis toward the encapsulation layer, reducing the induced strain. Barrier performance was maintained under the 6.4 mm radius of curvature in this encapsulation structure. Thus, shifting the neutral axis via device structural design is an effective method of extending the flexibility of thin-film encapsulation structure without compromising the performance loss as a barrier layer. - Highlights: • High performance barrier is fabricated on flexible substrate. • The water vapor transmission rate is 2.4 ± 1.5 × 10 −5 g/m 2 /day. • The structure maintains its performance under a small radius of bending curvature

Study on creep of fiber reinforced ultra-high strength concrete based on strength

Science.gov (United States)

Peng, Wenjun; Wang, Tao

2018-04-01

To complement the creep performance of ultra-high strength concrete, the long creep process of fiber reinforced concrete was studied in this paper. The long-term creep process and regularity of ultra-high strength concrete with 0.5% PVA fiber under the same axial compression were analyzed by using concrete strength (C80/C100/C120) as a variable. The results show that the creep coefficient of ultra-high strength concrete decreases with the increase of concrete strength. Compared with ACI209R (92), GL2000 models, it is found that the predicted value of ACI209R (92) are close to the experimental value, and the creep prediction model suitable for this experiment is proposed based on ACI209R (92).

High quality aluminium doped zinc oxide target synthesis from nanoparticulate powder and characterisation of sputtered thin films

Energy Technology Data Exchange (ETDEWEB)

Isherwood, P.J.M., E-mail: P.J.M.Isherwood@lboro.ac.uk [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Neves, N. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Bowers, J.W. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Newbatt, P. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Walls, J.M. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom)

2014-09-01

Nanoparticulate aluminium-doped zinc oxide powder was synthesised through detonation and subsequent rapid quenching of metallic precursors. This technique allows for precise compositional control and rapid nanoparticle production. The resulting powder was used to form sputter targets, which were used to deposit thin films by radio frequency sputtering. These films show excellent sheet resistance and transmission values for a wide range of deposition temperatures. Crystal structure analysis shows that crystals in the target have a random orientation, whereas the crystals in the films grow perpendicular to the substrate surface and propagate preferentially along the (002) axis. Higher temperature deposition reduces crystal quality with a corresponding decrease in refractive index and an increase in sheet resistance. Films deposited between room temperature and 300 °C were found to have sheet resistances equivalent to or better than indium tin oxide films for a given average transmission value. - Highlights: • Nanoparticulate AZO powder was used to produce sputter targets. • The powder synthesis technique allows for precise compositional control. • Sputtered films show excellent optical, electronic and structural properties. • High temperature films show reduced electrical and structural quality. • For a given transmission, films show equivalent sheet resistances to ITO.

Preparation of ultra-thin polypyrrole nanosheets decorated with Ag nanoparticles and their application in hydrogen peroxide detection

International Nuclear Information System (INIS)

Mahmoudian, M.R.; Alias, Y.; Basirun, W.J.; Ebadi, M.

2012-01-01

Highlights: ► Ag nanoparticles-decorated ultra thin polypyrrole nanosheets were prepared. ► Higher surface area of the polymer increased interaction between the polymer and Ag + . ► The sensitivity was estimated to be 4.477 μA mM −1 for linear segment. ► The LOD and LOQ (S/N = 3) were estimated to be 0.57 μM and 1.93 μM, respectively. - Abstract: This study examines the preparation of ultra-thin polypyrrole nanosheets decorated with Ag nanoparticles (Ag-UTPNSs) and their application in the enzyme-less detection of hydrogen peroxide (H 2 O 2 ) detection. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) results confirmed that Ag nanoparticles (NPs) were deposited onto the surface of the UTPNSs. The increase of the H 2 O 2 reduction current peak to 120 μA in the presence of the Ag-UTPNS/glassy carbon electrode (GCE) as compared to the UTPNS/GCE indicates that the sensitivity of the electrode to H 2 O 2 is significant. This observation can be explained by the larger surface area of the UTPNSs, which can increase the interactions between the polymer and the AgNO 3 solution during the deposition of the Ag NPs, and by the small size of the deposited Ag NPs, which can produce a surface area of Ag that is suitable for the reaction with H 2 O 2 . The amperometric responses show that the limit of detection, the limit of quantification (S/N = 3) and the sensitivity are estimated to be 0.57 μM, 1.93 μM and 4.477 μA mM −1 , respectively, for the linear segment. The results of the reproducibility experiments show that the use of Ag-UTPNS/GCE is feasible for the quantitative detection of certain concentration ranges of H 2 O 2 .

Bond behavior of reinforcing steel in ultra-high performance concrete.

Science.gov (United States)

2014-10-01

Ultra-High Performance Concrete (UHPC) is a relatively new class of advanced cementitious composite : materials, which exhibits high compressive [above 21.7 ksi (150 MPa)] and tensile [above 0.72 ksi (5 MPa)] : strengths. The discrete steel fiber rei...

Widely tunable single-/dual-wavelength fiber lasers with ultra-narrow linewidth and high OSNR using high quality passive subring cavity and novel tuning method.

Science.gov (United States)

Feng, Ting; Ding, Dongliang; Yan, Fengping; Zhao, Ziwei; Su, Hongxin; Yao, X Steve

2016-08-22

High stability single- and dual-wavelength compound cavity erbium-doped fiber lasers (EDFLs) with ultra-narrow linewidth, high optical signal to noise ratio (OSNR) and widely tunable range are demonstrated. Different from using traditional cascaded Type-1/Type-2 fiber rings as secondary cavities, we nest a Type-1 ring inside a Type-2 ring to form a passive subring cavity to achieve single-longitudinal-mode (SLM) lasing with ultra-narrow linewidth for the first time. We also show that the SLM lasing stability can be further improved by inserting a length of polarization maintaining fiber in the Type-2 ring. Using a uniform fiber Bragg grating (FBG) and two superimposed FBGs as mode restricting elements, respectively, we obtain a single-wavelength EDFL with a linewidth as narrow as 715 Hz and an OSNR as high as 73 dB, and a dual-wavelength EDFL with linewidths less than 1 kHz and OSNRs higher than 68 dB for both lasing wavelengths. Finally, by employing a novel self-designed strain adjustment device capable of applying both the compression and tension forces to the FBGs for wavelength tuning, we achieve the tuning range larger than 10 nm for both of the EDFLs.

Ultra-high Performance Liquid Chromatography in Steroid Analysis

OpenAIRE

Salonen, Fanny

2017-01-01

The latest version of liquid chromatography is ultra-high performance (or pressure) chromatography (UHPLC). In the technique, short and narrow-bore columns with particle sizes below 3 µm are used. The extremely high pressure used results in very short analysis times, excellent separation, and good resolution. This makes UHPLC a good choice for steroidal analysis. Steroids are a highly interesting area of study; they can be recognized as biomarkers for several diseases and are a relevant topic...

Research on cooling of ultra high critical heat flux with external flow boiling of water. Challenge to achieve ultra high critical heat flux and improvement in estimation of critical heat flux. JAERI's nuclear research promotion program, H11-004 (Contract research)

International Nuclear Information System (INIS)

Monde, Masanori; Mitsutake, Yuichi; Ishida, Kenji; Hino, Ryutaro

2003-03-01

An ultra high critical heat flux (CHF) has been challenged with a highly subcooled water jet impinging on a small rectangular heated surface. Major objective of the study is to achieve an ultra high heat flux cooling as large as 100 MW/m 2 and to establish an accurate estimation method of the CHF. The experiments were carried out over the experimental range; a fixed jet diameter of 2 mm, jet velocity of 5 - 35 m/s, degree of subcooling of 80 - 170 K and system pressure of 0.1 - 1.0 MPa. The rectangular heated surface with a thin nickel foil of 0.03 - 0.3 mm in thickness, 5 and 10 mm in length, and 4 mm in width and heated by a direct current. Effects of thickness of heater wall, jet velocity and subcooling on the CHF were experimentally elucidated. The experimental results show that the CHF decreases about 50% as the heater thickness, namely heat capacity of heater decreases. Characteristics of the CHF with heater length of 10 mm are correlated within ±20% by the generalized correlation of subcooled CHF proposed by the authors. However, the CHF with the shorter heater length of 5 mm shows large deviation of -40% especially at lower subcooling and higher velocity. The maximum CHF of 212 MW/m 2 was achieved at the subcooling of 151 K, the jet velocity of 35 m/s and system pressure of 0.5 MPa. The maximum CHF under atmospheric pressure approaches to 48% of the ultimate maximum heat flux given by the assumptions that vapor molecules leave a liquid-vapor interface at the average speed of a Boltzman-Maxwellian gas and any molecules returning to the interface are not permitted. The ratio of the CHF and ultimate maximum heat flux was considerably enhanced from the existing record of 30%. This study can give the feasibility of ultra high heat flux removal facing in a development of components such as a diverter of a fusion reactor. (author)

Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

Science.gov (United States)

Repins, Ingrid L.; Kuciauskas, Darius

2015-07-07

A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method.

Science.gov (United States)

Yuan, Yongbo; Giri, Gaurav; Ayzner, Alexander L; Zoombelt, Arjan P; Mannsfeld, Stefan C B; Chen, Jihua; Nordlund, Dennis; Toney, Michael F; Huang, Jinsong; Bao, Zhenan

2014-01-01

Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm(2) Vs(-1) (25 cm(2) Vs(-1) on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

High quality-factor fano metasurface comprising a single resonator unit cell

Science.gov (United States)

Sinclair, Michael B.; Warne, Larry K.; Basilio, Lorena I.; Langston, William L.; Campione, Salvatore; Brener, Igal; Liu, Sheng

2017-06-20

A new monolithic resonator metasurface design achieves ultra-high Q-factors while using only one resonator per unit cell. The metasurface relies on breaking the symmetry of otherwise highly symmetric resonators to induce intra-resonator mixing of bright and dark modes (rather than inter-resonator couplings), and is scalable from the near-infrared to radio frequencies and can be easily implemented in dielectric materials. The resulting high-quality-factor Fano metasurface can be used in many sensing, spectral filtering, and modulation applications.

Vacuum Bloch-Siegert shift in Landau polaritons with ultra-high cooperativity

Science.gov (United States)

Li, Xinwei; Bamba, Motoaki; Zhang, Qi; Fallahi, Saeed; Gardner, Geoff C.; Gao, Weilu; Lou, Minhan; Yoshioka, Katsumasa; Manfra, Michael J.; Kono, Junichiro

2018-06-01

A two-level system resonantly interacting with an a.c. magnetic or electric field constitutes the physical basis of diverse phenomena and technologies. However, Schrödinger's equation for this seemingly simple system can be solved exactly only under the rotating-wave approximation, which neglects the counter-rotating field component. When the a.c. field is sufficiently strong, this approximation fails, leading to a resonance-frequency shift known as the Bloch-Siegert shift. Here, we report the vacuum Bloch-Siegert shift, which is induced by the ultra-strong coupling of matter with the counter-rotating component of the vacuum fluctuation field in a cavity. Specifically, an ultra-high-mobility two-dimensional electron gas inside a high-Q terahertz cavity in a quantizing magnetic field revealed ultra-narrow Landau polaritons, which exhibited a vacuum Bloch-Siegert shift up to 40 GHz. This shift, clearly distinguishable from the photon-field self-interaction effect, represents a unique manifestation of a strong-field phenomenon without a strong field.

Ultra high energy cosmic rays

International Nuclear Information System (INIS)

Watson, A.A.

1986-01-01

Cosmic radiation was discovered 70 years ago but its origin remains an open question. The background to this problem is outlined and attempts to discover the origin of the most energetic and rarest group above 10 15 eV are described. Measurements of the energy spectrum and arrival direction pattern of the very highest energy particles, mean energy about 6 x 10 19 eV, are used to argue that these particles originate outside our galaxy. Recent evidence from the new field of ultra high energy γ-ray astronomy are discussed in the context of a galactic origin hypothesis for lower energy cosmic rays. (author)

Interaction of initial litter quality and thinning intensity on litter decomposition rate, nitrogen accumulation and release in a pine plantation

Science.gov (United States)

Xiao Chen; Deborah Page-Dumroese; Ruiheng Lv; Weiwei Wang; Guolei Li; Yong. Liu

2014-01-01

Thinning alters litter quality and microclimate under forests. Both of these two changes after thinning induce alterations of litter decomposition rates and nutrient cycling. However, a possible interaction between these two changes remains unclear. We placed two types of litter (LN, low N concentration litter; HN, high N concentration litter) in a Chinese pine (Pinus...

Ultra-High Field Magnets for X-Ray and Neutron Scattering using High Temperature Superconductors

Energy Technology Data Exchange (ETDEWEB)

Winn, Barry L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Broholm, C. [Johns Hopkins Univ., Baltimore, MD (United States); Bird, M. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Breneman, Bruce C. [General Atomics, San Diego, CA (United States); Coffey, Michael [Cryomagnetics, Oak Ridge, TN (United States); Cutler, Roy I. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Duckworth, Robert C. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Erwin, R. [National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States); Hahn, Seungyong [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Hernandez, Yamali [National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States); Herwig, Kenneth W. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Holland, Leo D. [General Atomics, San Diego, CA (United States); Lonergan, Kevin M. [Oxford Instruments, Abingdon (United Kingdom); Melhem, Ziad [Oxford Instruments, Abingdon (United Kingdom); Minter, Stephen J. [Cryomagnetics, Oak Ridge, TN (United States); Nelson, C. [Brookhaven National Lab. (BNL), Upton, NY (United States); Paranthaman, M. Parans [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Pierce, Josh [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Ruff, Jacob [Cornell Univ., Ithaca, NY (United States); Shen, Tengming [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Sherline, Todd E. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Smeibidl, Peter G. [Helmholtz-Zentrum Berlin (HZB), (Germany); Tennant, David [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); van der Laan, Danko [Advanced Conductor Technologies, LLC, Boulder, CO (United States); Wahle, Robert J. [Helmholtz-Zentrum Berlin (HZB), (Germany); Zhang, Yifei [SuperPower, Inc., Schenectady, NY (United States)

2017-01-01

X-ray and neutron scattering techniques are capable of acquiring information about the structure and dynamics of quantum matter. However, the high-field magnet systems currently available at x-ray and neutron scattering facilities in the United States are limited to fields of 16 tesla (T) at maximum, which precludes applications that require and/or study ultra-high field states of matter. This gap in capability—and the need to address it—is a central conclusion of the 2005 National Academy of Sciences report by the Committee on Opportunities in High Magnetic Field Science. To address this gap, we propose a magnet development program that would more than double the field range accessible to scattering experiments. With the development and use of new ultra-high field–magnets, the program would bring into view new worlds of quantum matter with profound impacts on our understanding of advanced electronic materials.

The uniformity study of non-oxide thin film at device level using electron energy loss spectroscopy

Science.gov (United States)

Li, Zhi-Peng; Zheng, Yuankai; Li, Shaoping; Wang, Haifeng

2018-05-01

Electron energy loss spectroscopy (EELS) has been widely used as a chemical analysis technique to characterize materials chemical properties, such as element valence states, atoms/ions bonding environment. This study provides a new method to characterize physical properties (i.e., film uniformity, grain orientations) of non-oxide thin films in the magnetic device by using EELS microanalysis on scanning transmission electron microscope. This method is based on analyzing white line ratio of spectra and related extended energy loss fine structures so as to correlate it with thin film uniformity. This new approach can provide an effective and sensitive method to monitor/characterize thin film quality (i.e., uniformity) at atomic level for thin film development, which is especially useful for examining ultra-thin films (i.e., several nanometers) or embedded films in devices for industry applications. More importantly, this technique enables development of quantitative characterization of thin film uniformity and it would be a remarkably useful technique for examining various types of devices for industrial applications.

Sensors for ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

2014-11-21

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

Sensors for ultra-fast silicon detectors

International Nuclear Information System (INIS)

Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

2014-01-01

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

Ground Glass Pozzolan in Conventional, High, and Ultra-High Performance Concrete

OpenAIRE

Tagnit-Hamou Arezki; Zidol Ablam; Soliman Nancy; Deschamps Joris; Omran Ahmed

2018-01-01

Ground-glass pozzolan (G) obtained by grinding the mixed-waste glass to same fineness of cement can act as a supplementary-cementitious material (SCM), given that it is an amorphous and a pozzolanic material. The G showed promising performances in different concrete types such as conventional concrete (CC), high-performance concrete (HPC), and ultra-high performance concrete (UHPC). The current paper reports on the characteristics and performance of G in these concrete types. The use of G pro...

Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)

Energy Technology Data Exchange (ETDEWEB)

Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Garcia Diaz, Reyes; Takeuchi, Noboru [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Haider, Muhammad [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261 (Saudi Arabia)

2013-10-14

L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

Charge selective contact on ultra-thin In(OH)xS y/Pb(OH) xS y heterostructure prepared by SILAR

International Nuclear Information System (INIS)

Gavrilov, S.; Oja, I.; Lim, B.; Belaidi, A.; Bohne, W.; Strub, E.; Roehrich, J.; Lux-Steiner, M.-Ch.; Dittrich, Th.

2006-01-01

Ultra-thin In(OH) x S y /Pb(OH) x S y heterostructures were formed by the wet chemical SILAR (successive ion layer adsorption and reaction) technique. ERDA (elastic recoil detection analysis) was used for stoichiometry analysis. The heterocontacts were conditioned by joint annealing of the two layers at different low temperatures in air. The charge selectivity was demonstrated with various small area solar cell structures. The results are discussed on the base of formation of bonds between sulphide clusters and passivation of defects with hydrogen containing species in hydroxy-sulphides. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Graphene as tunable contact for high performance thin film transistor

Science.gov (United States)

Liu, Yuan

performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 105. The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. Furthermore, I will, demonstrate a new design strategy for vertical OTFT with ultra-short channel length without using conventional high-resolution lithography process. They can deliver a high current density over 1.8 A/ cm2 and thus enable a high cutoff frequency devices (~ 0.4 MHz) comparable with the ultra-short channel organic transistors. Importantly, with unique vertical architecture, the entire organic channel material is sandwiched between the source and drain electrodes and is thus naturally protected to ensure excellent air-stability. Finally I will present a new strategy by using graphene as the back electrodes to achieve Ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily tuned by a gate potential to enable a nearly perfect band alignment with MoS2. For the first time, a transparent contact to MoS2 is demonstrated with zero contact barrier and linear output behaviour at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator-transition (MIT) can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barriers found in conventional metal-contacted MoS2 devices. With further passivation by boron nitride (BN) encapsulation, we demonstrate a record-high extrinsic (two-terminal) field effect mobility up to 1300 cm2/V s in MoS2 at low temperature. These findings can open up exciting new

Ultra low nanowear in novel chromium/amorphous chromium carbide nanocomposite films

Science.gov (United States)

Yate, Luis; Martínez-de-Olcoz, Leyre; Esteve, Joan; Lousa, Arturo

2017-10-01

In this work, we report the first observation of novel nanocomposite thin films consisting of nanocrystalline chromium embedded in an amorphous chromium carbide matrix (nc-Cr/a-CrC) with relatively high hardness (∼22,3 GPa) and ultra low nanowear. The films were deposited onto silicon substrates using a magnetic filtered cathodic arc deposition system at various negative bias voltages, from 50 to 450 V. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) suggested the co-existence of chromium and chromium carbide phases, while high resolution transmission electron microscopy (HRTEM) confirmed the presence of the nc-Cr/a-CrC structure. The friction coefficient measured with the ball-on disk technique and the nanowear results showed a strong correlation between the macro and nano-tribological properties of the samples. These novel nanocomposite films show promising properties as solid lubricant and wear resistant coatings with relatively high hardness, low friction coefficient and ultra low nanowear.

Ultra-High-Efficiency Apodized Grating Coupler Using a Fully Etched Photonic Crystal

DEFF Research Database (Denmark)

Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

2013-01-01

We demonstrate an apodized fiber-to-chip grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform. An ultra-high coupling efficiency of 1.65 dB (68%) with 3 dB bandwidth of 60 nm is experimentally demonstrated.......We demonstrate an apodized fiber-to-chip grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform. An ultra-high coupling efficiency of 1.65 dB (68%) with 3 dB bandwidth of 60 nm is experimentally demonstrated....

High-energy green supercapacitor driven by ionic liquid electrolytes as an ultra-high stable next-generation energy storage device

Science.gov (United States)

Thangavel, Ranjith; Kannan, Aravindaraj G.; Ponraj, Rubha; Thangavel, Vigneysh; Kim, Dong-Won; Lee, Yun-Sung

2018-04-01

Development of supercapacitors with high energy density and long cycle life using sustainable materials for next-generation applications is of paramount importance. The ongoing challenge is to elevate the energy density of supercapacitors on par with batteries, while upholding the power and cyclability. In addition, attaining such superior performance with green and sustainable bio-mass derived compounds is very crucial to address the rising environmental concerns. Herein, we demonstrate the use of watermelon rind, a bio-waste from watermelons, towards high energy, and ultra-stable high temperature green supercapacitors with a high-voltage ionic liquid electrolyte. Supercapacitors assembled with ultra-high surface area, hierarchically porous carbon exhibits a remarkable performance both at room temperature and at high temperature (60 °C) with maximum energy densities of ∼174 Wh kg-1 (25 °C), and 177 Wh kg-1 (60 °C) - based on active mass of both electrodes. Furthermore, an ultra-high specific power of ∼20 kW kg-1 along with an ultra-stable cycling performance with 90% retention over 150,000 cycles has been achieved even at 60 °C, outperforming supercapacitors assembled with other carbon based materials. These results demonstrate the potential to develop high-performing, green energy storage devices using eco-friendly materials for next generation electric vehicles and other advanced energy storage systems.

High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

Energy Technology Data Exchange (ETDEWEB)

Hemmi, A.; Bernard, C.; Cun, H.; Roth, S.; Klöckner, M.; Kälin, T.; Osterwalder, J.; Greber, T., E-mail: greber@physik.uzh.ch [Physik-Institut, Universität Zürich, CH-8057 Zürich (Switzerland); Weinl, M.; Gsell, S.; Schreck, M. [Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)

2014-03-15

The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

Calixarene Langmuir-Blodgett Thin Films For Volatile Organic Compounds

International Nuclear Information System (INIS)

Capan, R.

2010-01-01

Volatile Organic Compounds (VOC's) such as benzene, toluene, chloroform are chemicals that evaporate easily at room temperature and create many health effects on young children, elderly and a person with heightened sensitivity to chemicals. Concentrations of many VOC's are consistently higher indoors (up to ten times higher) than outdoors because many household products (for example paints, varnishes, many cleaning, disinfecting, cosmetic, degreasing, hobby products etc.) contains VOC's. Some effects of VOC's for human beings can be followed as the eye, nose, and throat irritations; headaches, loss of coordination, nausea; damage to liver, kidneys, and central nervous system. These are big incentives for the development of portable, user-friendly VOC's sensors and for the investigation of the sensing properties of new materials to be prepared as a thin film sensing element. Langmuir-Blodgett (LB) ultra-thin film technique allows us to produce monolayer or multilayer organic thin films that can be used as chemical sensing elements.In this work, materials known as the calix[n]arene are investigated for the production of sensing material against several VOC's such as the chloroform, benzene, ethylbenzene and toluene by using LB thin film techniques. UV-visible, Quartz Crystal Microbalance (QCM) system and Surface Plasmon Resonance (SPR) measurement techniques are used to check the quality of the deposition process onto a solid substrate. Surface morphology and sensing properties of the final sensing layers are then studied by Atomic Force Microscopy (AFM) and SPR techniques. Our results indicated that selected calixarene materials are sensitive enough and quite suitable to fabricate a highly ordered, reproducible and uniform LB film that can be used as a very thin sensing layer against VOC's.

Solvent-induced crystallization for hybrid perovskite thin-film photodetector with high-performance and low working voltage

International Nuclear Information System (INIS)

Hu, Wei; Yang, Shuzhen; Fan, Peng; Pan, Anlian; Wu, Runsheng; Yang, Junliang

2017-01-01

Organometal trihalide perovskites have emerged as a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. Using a high-quality perovskite thin film prepared by solvent-induced crystallization method and adopting a novel device configuration based on photon recycling effect, a perovskite thin-film photodetector has been constructed with the highest external quantum efficiency of 4.1  ×  10 4 % and responsivity of 219 A W −1 at a low bias of 1 V so far. The device working mechanism was further disclosed based on energy band bending model. The high-performance and low working-voltage perovskite thin-film photodetector will find potential applications in photodetection and optoelectronic integrated circuits. (paper)

Adaptive sensor-based ultra-high accuracy solar concentrator tracker

Science.gov (United States)

Brinkley, Jordyn; Hassanzadeh, Ali

2017-09-01

Conventional solar trackers use information of the sun's position, either by direct sensing or by GPS. Our method uses the shading of the receiver. This, coupled with nonimaging optics design allows us to achieve ultra-high concentration. Incorporating a sensor based shadow tracking method with a two stage concentration solar hybrid parabolic trough allows the system to maintain high concentration with acute accuracy.

High-frequency applications of high-temperature superconductor thin films

Science.gov (United States)

Klein, N.

2002-10-01

High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz.

High-frequency applications of high-temperature superconductor thin films

International Nuclear Information System (INIS)

Klein, N.

2002-01-01

High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz. (author)

Fiber based hydrophones for ultra-high energy neutrino detection

NARCIS (Netherlands)

Buis, E.J.; Doppenberg, E.J.J.; Eijk, D. van; Lahmann, R.; Nieuwland, R.A.; Toet, P.M.

2014-01-01

It is a well studied process [1, 2] that energy deposition of cosmic ray particles in water that generate thermo-acoustic signals. Hydrophones of sufficient sensitivity could measure this signal and provide a means of detecting ultra-high energetic cosmic neutrinos. We investigate optical

High-efficiency water-loaded microwave antenna in ultra-high-frequency band

Science.gov (United States)

Gong, Zilun; Bartone, Chris; Yang, Fuyi; Yao, Jie

2018-03-01

High-index dielectrics are widely used in microwave antennas to control the radiation characteristics. Liquid water, with a high dielectric index at microwave frequency, is an interesting material to achieving tunable functionalities. Here, we demonstrate a water-loaded microwave antenna system that has high loss-tolerance and wideband tunability enabled by fluidity. Our simulation and experimental results show that the resonance frequency can be effectively tuned by the size of loading water. Furthermore, the antenna systems with water loading can achieve high radiation efficiency (>90%) in the ultra-high-frequency (0.3-3 GHz) band. This work brings about opportunities in realistic tunable microwave antenna designs enabled by liquid.

Fabrication and electrical characterization of ultra-thin substrate IGBT

OpenAIRE

Guhathakurta, Jajnabalkya

2013-01-01

Current topics such as electro-mobility and renewable energy demand the development of power devices with high voltage and current ratings along with minimum switching losses. Amongst the power devices in today’s market, IGBTs have gained a lot of significance in this field over its competitors like Power MOSFETS and Thyristors. Today’s industry has recently taken a huge step in this direction to implement the use of thin-wafer technology for fabrication of IGBTs to reduce the on-resistance. ...

The Heart of China revisited: II Early Paleozoic (ultra)high-pressure and (ultra)high-temperature metamorphic Qinling orogenic collage

Science.gov (United States)

Bader, Thomas; Franz, Leander; Ratschbacher, Lothar; de Capitani, Christian; Webb, A. Alexander G.; Yang, Zhao; Pfänder, Jörg A.; Hofmann, Mandy; Linnemann, Ulf

2013-07-01

Orogens with multiple (ultra)high-pressure ((U)HP) and (ultra)high-temperature ((U)HT) metamorphic events provide a complex but telling record of oceanic and continental interaction. The Early Paleozoic history of the "Heart of China," the Qinling orogenic collage, offers snapshots of at least three (U)HP and two (U)HT metamorphic events. The preservation of remnants of both oceanic and continental domains together with a ≥110 Myr record of magmatism allows the reconstruction of the processes that resulted in this disparate metamorphism. Herein, we first illuminate the pressure-temperature-time (P-T-t) evolution of the Early Paleozoic (U)HP and (U)HT events by refining the petrographic descriptions and P-T estimates, assess published, and employ new U/Th-Pb zircon, monazite, and titanite, and 40Ar-39Ar phengite geochronology to date the magmatic and metamorphic events. Then we explore how the metamorphic and magmatic events are related tectonically and how they elucidate the affinities among the various complexes in the Qinling orogenic collage. We argue that a Meso-Neoproterozoic crustal fragment—the Qinling complex—localized subduction-accretion events that involved subduction, oceanic-arc formation, and back-arc spreading along its northern margin, and mtantle-wedge exhumation and spreading-ridge subduction along its southern margin.

Facile approach to synthesize Ni(OH)2 nanoflakes on MWCNTs for high performance electrochemical supercapacitors

International Nuclear Information System (INIS)

Shahid, Muhammad; Liu Jingling; Shakir, Imran; Warsi, Muhammad Farooq; Nadeem, Muhammad; Kwon, Young-Uk

2012-01-01

Highlights: ► Deposition of ultra-thin Ni(OH) 2 nanoflakes on MWCNTs. ► Full utilization of the Ni(OH) 2 nanoflakes which provide maximum pseudocapacitance while minimizing the high surface area. ► The ultra-thin layer of Ni(OH) 2 nanoflakes on highly conductive MWCNTs is favorable for fast ion and electron transfer. ► The ultra-thin layer of Ni(OH) 2 nanoflakes on MWCNTs exhibited good cycling stability and lifetime. - Abstract: Ultrathin nanoflakes of Ni(OH) 2 were synthesized onto multi-walled carbon nanotubes (MWCNTs) by simple low cost chemically precipitation method for high performance electrochemical supercapacitor applications. The synthesized ultrathin Ni(OH) 2 exhibit high specific capacitance of 1735 Fg −1 at a scan rate of 5 mV s −1 with excellent rate capability. This high performance of Ni(OH) 2 nanoflakes was attributed to its complete accessibility to the electrolyte and maximum utilization of metal hydroxides. Findings of this work suggest that synthesized electrodes offer low-cost and scalable solution for high-performance energy storage devices.

The design of an ultra-thin and multiple channels optical receiving antenna system with freeform lenses

Science.gov (United States)

Zhang, Lingyun; Cheng, Dewen; Hu, Yuan; Song, Weitao; Wang, Yongtian

2014-11-01

Visible Light Communications (VLC) has become an emerging area of research since it can provide higher data transmission speed and wider bandwidth. The white LEDs are very important components of the VLC system, because it has the advantages of higher brightness, lower power consumption, and a longer lifetime. More importantly, their intensity and color are modulatable. Besides the light source, the optical antenna system also plays a very important role in the VLC system since it determines the optical gain, effective working area and transmission rate of the VLC system. In this paper, we propose to design an ultra-thin and multiple channels optical antenna system by tiling multiple off-axis lenses, each of which consists of two reflective and two refractive freeform surfaces. The tiling of multiple systems and detectors but with different band filters makes it possible to design a wavelength division multiplexing VLC system to highly improve the system capacity. The field of view of the designed antenna system is 30°, the entrance pupil diameter is 1.5mm, and the thickness of the system is under 4mm. The design methods are presented and the results are discussed in the last section of this paper. Besides the optical gain is analyzed and calculated. The antenna system can be tiled up to four channels but without the increase of thickness.

Femtosecond laser texturing of glass substrates for improved light in-coupling in thin-film photovoltaics

Science.gov (United States)

Imgrunt, J.; Chakanga, K.; von Maydell, K.; Teubner, U.

2017-12-01

Due to their low thickness, thin-film solar cells usually suffer from poor light absorption. To improve this situation, light-management is necessary. Within the present work, in order to enhance light coupling, an ultra-short-pulse laser is used for texturing substrates. Here commercially available multi component soda lime glass substrates are patterned with a dot grid at ambient air pressure with 150 fs pulses, centered at a wavelength of 775 nm. The structures consist of small depressions with approximately 3 μ m diameter. Varying depths of around 300 nm could be well reproduced. Reducing the pitch (distance between structure-to-structure centers), from ten to approximately one times the crater diameter, influences the structure quality and increases the deformation of the surface in the vicinity of the depressions. Consequently, the diffuse light scattering is improved from 0 to 30% haze. Overall, the presented approach is quite simple. This single-step texturing technique which can be easily used on different substrates is applicable in a wide range of thin-film solar cells. It has the advantage that ultra-thin electrodes can be used as the front contact as well as the potential to be integrated into a PV production line. Thus, complicated layer stacks for absorption enhancement can be avoided.

A highly selective and wide range ammonia sensor—Nanostructured ZnO:Co thin film

International Nuclear Information System (INIS)

Mani, Ganesh Kumar; Rayappan, John Bosco Balaguru

2015-01-01

Graphical abstract: - Highlights: • Cobalt doped nanostructured ZnO thin films were spray deposited on glass substrates. • Co-doped ZnO film was highly selective towards ammonia than ethanol, methanol, etc. • The range of ammonia detection was improved significantly by doping cobalt in ZnO. - Abstract: Ammonia sensing characteristics of undoped and cobalt (Co)-doped nanostructured ZnO thin films were investigated. Polycrystalline nature with hexagonal wurtzite structure and high crystalline quality with dominant (0 0 2) plane orientation of Co-doped ZnO film were confirmed by the X-ray diffractogram. Scanning electron micrographs of the undoped film demonstrated the uniform deposition of sphere-shaped grains. But, smaller particles with no clear grain boundaries were observed for Co-doped ZnO thin film. Band gap values were found to be 3.26 eV and 3.22 eV for undoped and Co-doped ZnO thin films. Ammonia sensing characteristics of Co-doped ZnO film at room temperature were investigated in the concentration range of 15–1000 ppm. Variation in the sensing performances of Co-doped and pure ZnO thin films has been analyzed and compared

Multi-step cure kinetic model of ultra-thin glass fiber epoxy prepreg exhibiting both autocatalytic and diffusion-controlled regimes under isothermal and dynamic-heating conditions

Science.gov (United States)

Kim, Ye Chan; Min, Hyunsung; Hong, Sungyong; Wang, Mei; Sun, Hanna; Park, In-Kyung; Choi, Hyouk Ryeol; Koo, Ja Choon; Moon, Hyungpil; Kim, Kwang J.; Suhr, Jonghwan; Nam, Jae-Do

2017-08-01

As packaging technologies are demanded that reduce the assembly area of substrate, thin composite laminate substrates require the utmost high performance in such material properties as the coefficient of thermal expansion (CTE), and stiffness. Accordingly, thermosetting resin systems, which consist of multiple fillers, monomers and/or catalysts in thermoset-based glass fiber prepregs, are extremely complicated and closely associated with rheological properties, which depend on the temperature cycles for cure. For the process control of these complex systems, it is usually required to obtain a reliable kinetic model that could be used for the complex thermal cycles, which usually includes both the isothermal and dynamic-heating segments. In this study, an ultra-thin prepreg with highly loaded silica beads and glass fibers in the epoxy/amine resin system was investigated as a model system by isothermal/dynamic heating experiments. The maximum degree of cure was obtained as a function of temperature. The curing kinetics of the model prepreg system exhibited a multi-step reaction and a limited conversion as a function of isothermal curing temperatures, which are often observed in epoxy cure system because of the rate-determining diffusion of polymer chain growth. The modified kinetic equation accurately described the isothermal behavior and the beginning of the dynamic-heating behavior by integrating the obtained maximum degree of cure into the kinetic model development.

New high-gain thin-gap detector for the OPAL hadron calorimeter

Energy Technology Data Exchange (ETDEWEB)

Dado, S; Goldberg, J; Lupu, N; Mincer, A I; Alexander, G; Bella, G; Gnat, Y; Grunhaus, J; Levy, A; Cohen, J

1986-12-01

A new type of thin-gap multiwire gas detector operating in a high-gain mode was developed for use in the OPAL pole-tip calorimeter. The detector thickness is only 6.6 mm and its area is 0.61 m/sup 2/. The induced pad readout provides high output pulses that require no amplification. The setup for the detector mass production and quality-control test is described. Results from a test beam setup that simulates the OPAL pole-tip calorimeter are presented and compared with computer simulations.

Modification of Ultra-High Vacuum Surfaces Using Free Radicals

CERN Document Server

Vorlaufer, G

2002-01-01

In ultra-high vacuum systems outgassing from vacuum chamber walls and desorption of surface adsorbates are usually the factors which determine pressure and residual gas composition. In particular in beam vacuum systems of accelerators like the LHC, where surfaces are exposed to intense synchrotron radiation and bombardment by energetic ions and electrons, surface properties like the molecular desorption yield or secondary electron yield can strongly influence the performance of the accelerator. Well-established treatment methods like vacuum bake-out or glow-discharge cleaning have been successfully applied in the past to condition ultra-high vacuum surfaces, but these methods are sometimes difficult to carry out, for example if the vacuum chambers are not accessible. In this work, an alternative treatment method is investigated. This method is based on the strong chemical reactivity of free radicals, electrically neutral fragments of molecules. Free radicals (in the case of this work, nitrogen and oxygen radi...

Investigation and basic evaluation for ultra-high burnup fuel cladding material

International Nuclear Information System (INIS)

Ioka, Ikuo; Nagase, Fumihisa; Futakawa, Masatoshi; Kiuchi, Kiyoshi

2001-03-01

In ultra-high burnup of the power reactor, it is an essential problem to develop the cladding with excellent durability. First, development history and approach of the safety assessment of Zircaloy for the high burnup fuel were summarized in the report. Second, the basic evaluation and investigation were carried out on the material with high practicability in order to select the candidate materials for the ultra-high burnup fuel. In addition, the basic research on modification technology of the cladding surface was carried out from the viewpoint of the addition of safety margin as a cladding. From the development history of the zirconium alloy including the Zircaloy, it is hard to estimate the results of in-pile test from those of the conventional corrosion test (out-pile test). Therefore, the development of the new testing technology that can simulate the actual environment and the elucidation of the corrosion-controlling factor of the cladding are desired. In cases of RIA (Reactivity Initiated Accident) and LOCA (Loss of Coolant Accident), it seems that the loss of ductility in zirconium alloys under heavy irradiation and boiling of high temperature water restricts the extension of fuel burnup. From preliminary evaluation on the high corrosion-resistance materials (austenitic stainless steel, iron or nickel base superalloys, titanium alloy, niobium alloy, vanadium alloy and ferritic stainless steel), stabilized austenitic stainless steels with a capability of future improvement and high-purity niobium alloys with a expectation of the good corrosion resistance were selected as candidate materials of ultra-high burnup cladding. (author)

High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

Energy Technology Data Exchange (ETDEWEB)

Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

2000-07-01

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Evaluating strength at ultra-high temperatures-Methods and results

International Nuclear Information System (INIS)

Voelkl, Rainer; Fischer, Bernd; Beschliesser, Manuel; Glatzel, Uwe

2008-01-01

Proprietary equipment for mechanical testing at ultra-high temperatures by ohmic heating is outlined. Strain is measured with a video extensometer with an accuracy of up to Δε-bar∼±0.00025%. Stability and accuracy of the test system are evaluated on Pt- and refractory alloys. These specially designed and built test facilities are compared to commercially available high-vacuum test chambers with tungsten heater

[Reparative Osteogenesis and Angiogenesis in Low Intensity Electromagnetic Radiation of Ultra-High Frequency].

Science.gov (United States)

Iryanov, Y M; Kiryanov, N A

2015-01-01

Non-drug correction of reparative bone tissue regeneration in different pathological states - one of the most actual problems of modern medicine. Our aim was to conduct morphological analysis of the influence of electromagnetic radiation of ultra-high frequency and low intensity on reparative osteogenesis and angiogenesis in fracture treatment under transosseous osteosynthesis. A controlled nonrandomized study was carried out. In the experiment conducted on rats we modeled tibial fracture with reposition and fixation of the bone fragments both in control and experimental groups. In the animals of the experimental group the fracture zone was exposed to low intensity electromagnetic radiation of ultra-high frequency. Exposure simulation was performed in the control group. The operated bones were examined using radiography, light and electronic microscopy, X-ray electronic probe microanalysis. It has been established that electromagnetic radiation of ultra-high frequency sessions in fracture treatment stimulate secretory activity and degranulation of mast cells, produce microcirculatory bed vascular permeability increase, endotheliocyte migration phenotype expression, provide endovascular endothelial outgrowth formation, activate reparative osteogenesis and angiogenesis while fracture reparation becomes the one of the primary type. The full periosteal, intermediary and intraosteal bone union was defined in 28 days. Among the therapeutic benefits of electromagnetic radiation of ultra-high frequency in fracture treatment we can detect mast cell secretorv activity stimulation and endovascular anziozenesis activation.

Probing physics at extreme energies with cosmic ultra-high energy ...

Indian Academy of Sciences (India)

testing new particle physics. Keywords. Ultra-high ... conventional theories of CR origin based on acceleration of charged particles in powerful ... Before discussing specific scenarios for UHECR origin we give a short account of the numerical ...

ATLAS and ultra high energy cosmic ray physics

Directory of Open Access Journals (Sweden)

Pinfold James

2017-01-01

Full Text Available After a brief introduction to extended air shower cosmic ray physics the current and future deployment of forward detectors at ATLAS is discussed along with the various aspects of the current and future ATLAS programs to explore hadronic physics. The emphasis is placed on those results and future plans that have particular relevance for high-energy, and ultra high-energy, cosmic ray physics. The possible use of ATLAS as an “underground” cosmic muon observatory is briefly considered.

An investigation into which factors control the nanotribological behaviour of thin sputtered carbon films

International Nuclear Information System (INIS)

Shi Baogui; Sullivan, John L; Beake, Ben D

2008-01-01

Ultra-thin (20-100 nm) films deposited on Si surfaces can improve their mechanical and tribological properties. As a stepping stone towards the optimization of such ultra-thin films, herein we report experimental nanoscratch and nanowear data on a-C films of thickness in the range 200-1000 nm on Si aiming to (1) understand the role of film thickness on the nanoscratch behaviour, (2) determine whether the same factors (substrate bias, H/E ratio, etc) are at play for thick films as for the thin films, (3) determine possible design rules for thinner films enabling their optimization for MEMS applications and (4) evaluate the use of the multi-pass (3-scan) procedure for clarifying the locus of failure. To a first approximation, the critical load for total film failure in the nanoscratch test is proportional to thickness provided the films are not too stressed. a-C films of 1 μm with very high H/E, deposited under high substrate bias, perform well at low load but very poorly in more highly loaded situations. Not only do they exhibit low critical loads but also failure involves extensive delamination outside of the scratch track. This is not observed on thinner films. A suitable strategy for optimizing wear resistance for thin films for MEMS applications is to aim to maximize H/E. For the 200 nm films studied here, the films with the highest H/E showed slightly improved scratch resistance

Inactivation of Bacillus spores inoculated in milk by Ultra High Pressure Homogenization.

Science.gov (United States)

Amador Espejo, Genaro Gustavo; Hernández-Herrero, M M; Juan, B; Trujillo, A J

2014-12-01

Ultra High-Pressure Homogenization treatments at 300 MPa with inlet temperatures (Ti) of 55, 65, 75 and 85 °C were applied to commercial Ultra High Temperature treated whole milk inoculated with Bacillus cereus, Bacillus licheniformis, Bacillus sporothermodurans, Bacillus coagulans, Geobacillus stearothermophilus and Bacillus subtilis spores in order to evaluate the inactivation level achieved. Ultra High-Pressure Homogenization conditions at 300 MPa with Ti = 75 and 85 °C were capable of a spore inactivation of ∼5 log CFU/mL. Furthermore, under these processing conditions, commercial sterility (evaluated as the complete inactivation of the inoculated spores) was obtained in milk, with the exception of G. stearothermophilus and B. subtilis treated at 300 MPa with Ti = 75 °C. The results showed that G. stearothermophilus and B. subtilis have higher resistance to the Ultra High-Pressure Homogenization treatments applied than the other microorganisms inoculated and that a treatment performed at 300 MPa with Ti = 85 °C was necessary to completely inactivate these microorganisms at the spore level inoculated (∼1 × 10(6) CFU/mL). Besides, a change in the resistance of B. licheniformis, B. sporothermodurans, G. stearothermophilus and B. subtilis spores was observed as the inactivation obtained increased remarkably in treatments performed with Ti between 65 and 75 °C. This study provides important evidence of the suitability of UHPH technology for the inactivation of spores in high numbers, leading to the possibility of obtaining commercially sterile milk. Copyright © 2014 Elsevier Ltd. All rights reserved.

Optical investigation of atomic steps in ultra-thin InGaAs/InP quantum wells grown by vapor levitation epitaxy

International Nuclear Information System (INIS)

Morais, P.C.

1988-09-01

Ultra-thin InGaAs/InP single-quantum-well structures, grown by chloride transport vapor levitation epitaxy, have been investigated by low temperature photoluminescence (PL). Well resolved peaks are observed in the PL spectra which we attribute to monolayer (a/2=2.93 A) variations in quantum well (QW) thickness. Separate peak positions for QW thicknesses corresponding to 2-6 monolayers have been determined, providing an unambiguous thickness calibration for spectral shifts due to quantum confinement. The PL peak corresponding to two monolayers occurs at 1.314 eV corresponding to an energy shift of 524 meV. Experimental data agree very well with a simple effective-mass theory. (author) [pt

UltraSail CubeSat Solar Sail Flight Experiment

Science.gov (United States)

Carroll, David; Burton, Rodney; Coverstone, Victoria; Swenson, Gary

2013-01-01

UltraSail is a next-generation, highrisk, high-payoff sail system for the launch, deployment, stabilization, and control of very large (km2 class) solar sails enabling high payload mass fractions for interplanetary and deep space spacecraft. UltraSail is a non-traditional approach to propulsion technology achieved by combining propulsion and control systems developed for formation- flying microsatellites with an innovative solar sail architecture to achieve controllable sail areas approaching 1 km2, sail subsystem area densities approaching 1 g/m2, and thrust levels many times those of ion thrusters used for comparable deep space missions. UltraSail can achieve outer planetary rendezvous, a deep-space capability now reserved for high-mass nuclear and chemical systems. There is a twofold rationale behind the UltraSail concept for advanced solar sail systems. The first is that sail-andboom systems are inherently size-limited. The boom mass must be kept small, and column buckling limits the boom length to a few hundred meters. By eliminating the boom, UltraSail not only offers larger sail area, but also lower areal density, allowing larger payloads and shorter mission transit times. The second rationale for UltraSail is that sail films present deployment handling difficulties as the film thickness approaches one micrometer. The square sail requires that the film be folded in two directions for launch, and similarly unfolded for deployment. The film is stressed at the intersection of two folds, and this stress varies inversely with the film thickness. This stress can cause the film to yield, forming a permanent crease, or worse, to perforate. By rolling the film as UltraSail does, creases are prevented. Because the film is so thin, the roll thickness is small. Dynamic structural analysis of UltraSail coupled with dynamic control analysis shows that the system can be designed to eliminate longitudinal torsional waves created while controlling the pitch of the blades

Ultra-high vacuum technology for accelerators

CERN Multimedia

CERN. Geneva. Audiovisual Unit; Hilleret, Noël; Strubin, Pierre M

2002-01-01

The lectures will start with a review of the basics of vacuum physics required to build Ultra High Vacuum (UHV) systems, such as static and dynamic outgassing. Before reviewing the various pumping and measurement devices, including the most modern one like Non Evaporable Getter (NEG) coatings, an overview of adequate materials to be used in UHV systems will be given together with their treatment (e.g. cleaning procedures and bake out). Practical examples based on existing or future accelerators will be used to illustrate the topics. Finally, a short overview of modern vacuum controls and interlocks will be given.

Ultra-high vacuum photoelectron linear accelerator

Science.gov (United States)

Yu, David U.L.; Luo, Yan

2013-07-16

An rf linear accelerator for producing an electron beam. The outer wall of the rf cavity of said linear accelerator being perforated to allow gas inside said rf cavity to flow to a pressure chamber surrounding said rf cavity and having means of ultra high vacuum pumping of the cathode of said rf linear accelerator. Said rf linear accelerator is used to accelerate polarized or unpolarized electrons produced by a photocathode, or to accelerate thermally heated electrons produced by a thermionic cathode, or to accelerate rf heated field emission electrons produced by a field emission cathode.

Optical buffer based on monolithic InP phased-array 1×16 switch with silica-PLC pitch converter and ultra-compact coiled fiber delay lines

NARCIS (Netherlands)

Tanemura, T.; Soganci, I. M.; Oyama, T.; Ohyama, T.; Mino, S.; Williams, K. A.; Calabretta, N.; Dorren, H. J S; Nakano, Y.

2010-01-01

We demonstrate large-capacity high-resolution optical buffer, comprising 1×16 InP switch and ultra-compact delay lines based on thin-cladding highly nonlinear fibers. Silica-PLC-based pitch converter is employed to realize uniform coupling from all 16 switch ports simultaneously.

Experiences of ultra-low-crud high-nickel control in Onagawa nuclear power station

International Nuclear Information System (INIS)

Saito, M.; Goto, Y.; Shinomiya, T.; Sato, M.; Yamazaki, K.; Hirasawa, H.; Yotsuyanagi, T.

2002-01-01

We have adopted various countermeasures for worker dose reduction to plants in Onagawa Nuclear Power Station. ''Ni/Fe ratio control'' has been adopted to Unit 1, and ''ultra-low-crud high-nickel control'' has been adopted to Unit 2 and 3, along with other countermeasures like wide utilization of low Co materials, for the purpose of dose rate reduction of primary recirculation piping which is thought to be one of the main exposure sources. In this paper, we describe, first, the reason and background that ultra-low-crud high-nickel control has been adopted to Unit 2, and, second, water chemistry of Unit 2 up to the 5. cycle under ultra-low-crud high-nickel control compared to that of Unit 1 under Ni/Fe ratio control. Following those, we show brief analysis of the fuel crud of Unit 2 and water chemistry of Unit 3 only at the startup stage. (authors)

Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics

Energy Technology Data Exchange (ETDEWEB)

Marneffe, J.-F. de, E-mail: marneffe@imec.be; Lukaszewicz, M.; Porter, S. B.; Vajda, F.; Rutigliani, V.; Verdonck, P.; Baklanov, M. R. [IMEC v.z.w., 3001 Leuven (Belgium); Zhang, L.; Heyne, M.; El Otell, Z.; Krishtab, M. [IMEC v.z.w., 3001 Leuven (Belgium); Department of Chemistry, KULeuven, 3001 Leuven (Belgium); Goodyear, A.; Cooke, M. [Oxford Instruments Plasma Technology, BS49 4AP Bristol (United Kingdom)

2015-10-07

Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition, the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge.

High spatio-temporal resolution pollutant measurements of on-board vehicle emissions using ultra-fast response gas analyzers

Directory of Open Access Journals (Sweden)

M. Irwin

2018-06-01

Full Text Available Existing ultra-fast response engine exhaust emissions analyzers have been adapted for on-board vehicle use combined with GPS data. We present, for the first time, how high spatio-temporal resolution data products allow transient features associated with internal combustion engines to be examined in detail during on-road driving. Such data are both useful to examine the circumstances leading to high emissions, and reveals the accurate position of urban air quality hot spots as deposited by the candidate vehicle, useful for source attribution and dispersion modelling. The fast response time of the analyzers, which results in 100 Hz data, makes accurate time-alignment with the vehicle's engine control unit (ECU signals possible. This enables correlation with transient air fuel ratio, engine speed, load, and other engine parameters, which helps to explain the causes of the emissions spikes that portable emissions measurement systems (PEMS and conventional slow response analyzers would miss or smooth out due to mixing within their sampling systems. The data presented is from NO and NOx analyzers, but other fast analyzers (e.g. total hydrocarbons (THC, CO and CO2 can be used similarly. The high levels of NOx pollution associated with accelerating on entry ramps to motorways, driving over speed bumps, accelerating away from traffic lights, are explored in detail. The time-aligned ultra-fast analyzers offer unique insight allowing more accurate quantification and better interpretation of engine and driver activity and the associated emissions impact on local air quality.

Stand quality management in a late-rotation, red oak-sweetgum stand in east Mississippi: preliminary results following thinning

Science.gov (United States)

James S. Meadows; Daniel A. Skojac

2012-01-01

Stand quality management is a new management strategy in which thinning prescriptions are based solely on tree quality rather than a quantitative level of residual stand density. As long as residual density falls within fairly broad limits, prescriptions are based on tree quality alone. We applied four thinning prescriptions based on stand quality management, along...

New high gain thin gap detector for the OPAL hadron calorimeter

Energy Technology Data Exchange (ETDEWEB)

Dado, S; Goldberg, J; Lupu, N; Mincer, A I; Alexander, G; Bella, G; Gnat, Y; Grunhaus, J; Levy, A; Cohen, J

1986-12-01

A new type of thin gap multiwire gas detector operating in a high gain mode has been developed for use in the OPAL pole tip calorimeter. The detector thickness is only 6.6 mm and its area is 0.61 m/sup 2/. The induced pad readout provides high output pulses which require no amplification. The set-up for the detector mass production and quality control test is described. Results from a test beam set-up that simulates the OPAL pole tip calorimeter are presented and compared with computer simulations.

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

Science.gov (United States)

Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

2018-04-01

To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low-k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low-k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low-k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

3D lumped components and miniaturized bandpass filter in an ultra-thin M-LCP for SOP applications

KAUST Repository

Arabi, Eyad A.

2013-01-01

In this work, a library of 3D lumped components completely embedded in the thinnest, multilayer LCP (M-LCP) stack- up with four metallization layers and 100 μm of total thickness, is reported for the first time. A vertically and horizontally interdigitated capacitor, realized in this stack-up, provides higher self resonant frequency as compared to a similarly sized conventional parallel plate capacitor. Based on the above mentioned library, a miniaturized bandpass filter is presented for the GPS application. It utilizes mutually coupled inductors and is the smallest reported in the literature with a size of (0.035×0.028×0.00089)λg. Finally, the same filter realized in a competing ceramic technology (LTCC) is compared in performance with the ultra-thin M-LCP design. The M-LCP module presented in this work is inherently exible and offers great potential for wearable and conformal applications.

Influence of high volumes of ultra-fine additions on self-compacting concrete[ACI SP-239

Energy Technology Data Exchange (ETDEWEB)

Cioffi, R. [Naples Univ., Naples (Italy). Faculty of Engineering; Colangelo, F. [Naples Univ., Naples (Italy). Dept. of Technologies; Caputo, D.; Liguori, B. [Naples Univ., Naples (Italy). Dept. of Materials and Production Engineering

2006-07-01

The addition of fine minerals can reduce water demand and increase the slump characteristics of concrete. This paper examined the influence of high volumes of ultra-fine fly ash, raw fly ash, silica fume and natural zeolites on the properties of self-compacting concrete (SCC). Three samples of SCC were prepared using various mineral additions to determine normal slump and J-ring slump flows of fresh concrete as well as the compressive strength and elastic modulus properties of hardened concrete. Cement and crushed limestone natural aggregates were used. The fly ash, silica fume and natural zeolites were subjected to wet high energy milling. The rotating speed, milling time, water-to-solid ratio, and size of milling media were optimized to obtain powders with varying qualities. Results of the study showed that values for the normal slump flow ranged between 604 and 785 mm, while the differences with the J-ring slump flow were less than 30 mm. The samples were then tested to evaluate the mechanical properties of the hardened concrete after 7 and 28 curing days. The modulus of elasticity and compressive strength showed improvements in the concretes containing the ultra-fine fly ash. No segregation phenomena were observed in the case of the cylindrical column specimens. It was concluded that all the specimens provided environmentally sustainable, high workability concretes which can be successfully prepared with the addition of high volumes of minerals. 17 refs., 5 tabs., 6 figs.

Ultra-high vacuum target assembly for charged particle irradiations in the materials research field

International Nuclear Information System (INIS)

Bressers, J.; Cassanelli, G.; Cat, R. de; Kohnen, H.; Gherardi, G.

1978-01-01

A target assembly designed for ion irradiation and ion implantation experiments on different particle accelerators is described. It consists of a target chamber separated from the beam line by a thin metal window, thus allowing implantations to be carried out under ultra-high vacuum conditions. Homogeneous in-depth distribution of the implanted ion species is realized by rotating the target about an axis perpendicular to the ion beam (rocking). The target holder is driven by means of a stepping motor with a constant step angle and a rocking device controller containing the required rocking angle-dwell time relation. Ion beam homogeneity over a sufficiently large target area is arrived at by transforming the Gaussian beam intensity profile into a flat beam intensity distribution by means of an electrostatic ring lens. The beam intensity profile is monitored by means of a specially designed ion beam monitor based on the Nipkov disc principle. A toroidal beam current monitoring transformer continuously measures the total beam current. Beam scanners and current measuring collimators complete the beam analysing equipment

Social cognition in patients at ultra-high risk for psychosis

DEFF Research Database (Denmark)

Glenthøj, Louise B.; Fagerlund, Birgitte; Hjorthøj, Carsten

2016-01-01

Objective: Patients at ultra-high risk (UHR) for psychosis show significant impairments in functioning. It is essential to determine which factors influence functioning, as it may have implications for intervention strategies. This study examined whether social cognitive abilities and clinical...

Research, development and pilot production of high output thin silicon solar cells

Science.gov (United States)

Iles, P. A.

1976-01-01

Work was performed to define and apply processes which could lead to high output from thin (2-8 mils) silicon solar cells. The overall problems are outlined, and two satisfactory process sequences were developed. These sequences led to good output cells in the thickness range to just below 4 mils; although the initial contract scope was reduced, one of these sequences proved capable of operating beyond a pilot line level, to yield good quality 4-6 mil cells of high output.

Diamond dispersed cemented carbide produced without using ultra high pressure equipment

International Nuclear Information System (INIS)

Moriguchi, H.; Tsuzuki, K.; Ikegaya, A.

2001-01-01

We have developed a composite material of dispersed diamond particles in cemented carbide without using ultra high pressure equipment. The developed diamond dispersed cemented carbide combines the excellent properties of cemented carbide with diamond and also provides 1.5 times improved fracture toughness over that of cemented carbide. They also show 10 times higher wear resistance over that of cemented carbide in a wear resistance test against bearing steel, and 5 times greater grindability than diamond compacts. Because ultra high pressure equipment is not used to produce the developed material, large compacts over 100 mm in diameter can be manufactured. The developed material showed 10-25 times higher wear resistance in real use as wear-resistant tools such as centerless blades and work-rests. (author)

Preliminary experience with 4K ultra-high definition endoscope: analysis of pros and cons in skull base surgery.

Science.gov (United States)

Rigante, M; La Rocca, G; Lauretti, L; D'Alessandris, G Q; Mangiola, A; Anile, C; Olivi, A; Paludetti, G

2017-06-01

During the last two decades endoscopic skull base surgery observed a continuous technical and technological development 3D endoscopy and ultra High Definition (HD) endoscopy have provided great advances in terms of visualisation and spatial resolution. Ultra-high definition (UHD) 4K systems, recently introduced in the clinical practice, will shape next steps forward especially in skull base surgery field. Patients were operated on through transnasal transsphenoidal endoscopic approaches performed using Olympus NBI 4K UHD endoscope with a 4 mm 0° Ultra Telescope, 300 W xenon lamp (CLV-S400) predisposed for narrow band imaging (NBI) technology connected through a camera head to a high-quality control unit (OTV-S400 - VISERA 4K UHD) (Olympus Corporation, Tokyo, Japan). Two screens are used, one 31" Monitor - (LMD-X310S) and one main ultra-HD 55" screen optimised for UHD image reproduction (LMD-X550S). In selected cases, we used a navigation system (Stealthstation S7, Medtronic, Minneapolis, MN, US). We evaluated 22 pituitary adenomas (86.3% macroadenomas; 13.7% microadenomas). 50% were not functional (NF), 22.8% GH, 18.2% ACTH, 9% PRL-secreting. Three of 22 were recurrences. In 91% of cases we achieved total removal, while in 9% near total resection. A mean follow-up of 187 days and average length of hospitalisation was 3.09 ± 0.61 days. Surgical duration was 128.18± 30.74 minutes. We experienced only 1 case of intraoperative low flow fistula with no further complications. None of the cases required any post- or intraoperative blood transfusion. The visualisation and high resolution of the operative field provided a very detailed view of all anatomical structures and pathologies allowing an improvement in safety and efficacy of the surgical procedure. The operative time was similar to the standard 2D HD and 3D procedures and the physical strain was also comparable to others in terms of ergonomics and weight. © Copyright by Società Italiana di Otorinolaringologia

Thin Film Magnetless Faraday Rotators for Compact Heterogeneous Integrated Optical Isolators (Postprint)

Science.gov (United States)

2017-06-15

AFRL-RX-WP-JA-2017-0348 THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL ISOLATORS (POSTPRINT) Dolendra Karki...Interim 9 May 2016 – 1 December 2016 4. TITLE AND SUBTITLE THIN-FILM MAGNETLESS FARADAY ROTATORS FOR COMPACT HETEROGENEOUS INTEGRATED OPTICAL...transfer of ultra-compact thin-film magnetless Faraday rotators to silicon photonic substrates. Thin films of magnetization latching bismuth

Ultra-thin Polyethylene glycol Coatings for Stem Cell Culture

Science.gov (United States)

Schmitt, Samantha K.

Human mesenchymal stem cells (hMSCs) are a widely accessible and a clinically relevant cell type that are having a transformative impact on regenerative medicine. However, current clinical expansion methods can lead to selective changes in hMSC phenotype resulting from relatively undefined cell culture surfaces. Chemically defined synthetic surfaces can aid in understanding stem cell behavior. In particular we have developed chemically defined ultra-thin coatings that are stable over timeframes relevant to differentiation of hMSCs (several weeks). The approach employs synthesis of a copolymer with distinct chemistry in solution before application to a substrate. This provides wide compositional flexibility and allows for characterization of the orthogonal crosslinking and peptide binding groups. Characterization is done in solution by proton NMR and after crosslinking by X-ray photoelectron spectroscopy (XPS). The solubility of the copolymer in ethanol and low temperature crosslinking, expands its applicability to plastic substrates, in addition to silicon, glass, and gold. Cell adhesive peptides, namely Arg-Gly-Asp (RGD) fragments, are coupled to coating via different chemistries resulting in the urethane, amide or the thioester polymer-peptide bonds. Development of azlactone-based chemistry allowed for coupling in water at low peptide concentrations and resulted in either an amide or thioester bonds, depending on reactants. Characterization of the peptide functionalized coating by XPS, infrared spectroscopy and cell culture assays, showed that the amide linkages can present peptides for multiple weeks, while shorter-term presentation of a few days is possible using the more labile thioester bond. Regardless, coatings promoted initial adhesion and spreading of hMSCs in a peptide density dependent manner. These coatings address the following challenges in chemically defined cell culture simultaneously: (i) substrate adaptability, (ii) scalability over large areas

High-resolution structural studies of ultra-thin magnetic, transition metal overlayers and two-dimensional transition metal oxides using synchrotron radiation

International Nuclear Information System (INIS)

Kellar, S.A.; Lawrence Berkeley National Lab., CA

1997-05-01

This thesis report the surface-structure determination of three, ultra-thin magnetic transition-metal films, Fe/Au(100), Mn/Ni(100), and Mn/Cu(100) using Angle-Resolved Photoemission Extended Fine Structure (ARPEFS) and photoelectron holography. These structural studies are the first to use non-s initial states in the ARPEFS procedure. This thesis also reports an ARPEFS surface-structure determination of a two-dimensional transition-metal oxide, [(1 x 1)O/W(110)] x 12. The authors have analyzed the ARPFES signal from the Au 4f 7/5 core level of the Au(1 ML)/Fe(15 ML)/Au(100) system. The analysis shows that the Fe grows layer by layer with one monolayer of gold, acting as a surfactant, remaining on top of the growing Fe layers. These surface gold atoms sit in the four-fold hollow site, 1.67 ± 0.02 A above the iron surface. The grown Fe layer is very much like the bulk, bcc iron, with an interlayer spacing of 1.43 ± 0.03 A. Analysis of the Mn 3p ARPEFS signals from c(2 x 2)Mn/Ni(100) and c(2 x 2)Mn/Cu(100) shows that the Mn forms highly corrugated surface alloys. The corrugation of the Mn/Ni(100) and Mn/Cu(100) systems are 0.24 ± 0.02 A and 0.30 ± 0.04 A respectively. In both cases the Mn is sticking above the plane of the surface substrate atoms. For the Mn/Ni(100) system the first layer Ni is contracted 4% from the bulk value. The Mn/Cu(100) system shows bulk spacing for the substrate Cu. Photoelectron holography shows that the Mn/Ni interface is very abrupt with very little Mn leaking into the second layer, while the Mn/Cu(100) case has a significant amount of Mn leaking into the second layer. A new, five-element electrostatic electron lens was developed for hemispherical electron-energy analyzers. This lens system can be operated at constant transverse or constants angular magnification, and has been optimized for use with the very small photon-spot sizes. Improvements to the hemispherical electron-energy analyzer are also discussed

High-resolution structural studies of ultra-thin magnetic, transition metal overlayers and two-dimensional transition metal oxides using synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Kellar, S.A. [Univ. of California, Berkeley, CA (United States). Dept. of Chemistry]|[Lawrence Berkeley National Lab., CA (United States). Advanced Light Source Div.

1997-05-01

This thesis report the surface-structure determination of three, ultra-thin magnetic transition-metal films, Fe/Au(100), Mn/Ni(100), and Mn/Cu(100) using Angle-Resolved Photoemission Extended Fine Structure (ARPEFS) and photoelectron holography. These structural studies are the first to use non-s initial states in the ARPEFS procedure. This thesis also reports an ARPEFS surface-structure determination of a two-dimensional transition-metal oxide, [(1 x 1)O/W(110)] x 12. The authors have analyzed the ARPFES signal from the Au 4f{sub 7/5} core level of the Au(1 ML)/Fe(15 ML)/Au(100) system. The analysis shows that the Fe grows layer by layer with one monolayer of gold, acting as a surfactant, remaining on top of the growing Fe layers. These surface gold atoms sit in the four-fold hollow site, 1.67 {+-} 0.02 A above the iron surface. The grown Fe layer is very much like the bulk, bcc iron, with an interlayer spacing of 1.43 {+-} 0.03 A. Analysis of the Mn 3p ARPEFS signals from c(2 x 2)Mn/Ni(100) and c(2 x 2)Mn/Cu(100) shows that the Mn forms highly corrugated surface alloys. The corrugation of the Mn/Ni(100) and Mn/Cu(100) systems are 0.24 {+-} 0.02 A and 0.30 {+-} 0.04 A respectively. In both cases the Mn is sticking above the plane of the surface substrate atoms. For the Mn/Ni(100) system the first layer Ni is contracted 4% from the bulk value. The Mn/Cu(100) system shows bulk spacing for the substrate Cu. Photoelectron holography shows that the Mn/Ni interface is very abrupt with very little Mn leaking into the second layer, while the Mn/Cu(100) case has a significant amount of Mn leaking into the second layer. A new, five-element electrostatic electron lens was developed for hemispherical electron-energy analyzers. This lens system can be operated at constant transverse or constants angular magnification, and has been optimized for use with the very small photon-spot sizes. Improvements to the hemispherical electron-energy analyzer are also discussed.

Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies

International Nuclear Information System (INIS)

Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.

2011-01-01

Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

KAUST Repository

Wang, Hsin-Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; Hettick, Mark; Zheng, Maxwell; Lien, Der-Hsien; Miller, D. Westley; Warren, Charles W.; Roe, Ellis T; Lonergan, Mark C; Guthrey, Harvey L.; Haegel, Nancy M.; Ager, Joel W.; Carraro, Carlo; Maboudian, Roya; He, Jr-Hau; Javey, Ali

2016-01-01

The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

KAUST Repository

Wang, Hsin-Ping

2016-06-08

The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.

Ultra high resolution imaging of the human head at 8 tesla: 2K x 2K for Y2K.

Science.gov (United States)

Robitaille, P M; Abduljalil, A M; Kangarlu, A

2000-01-01

To acquire ultra high resolution MRI images of the human brain at 8 Tesla within a clinically acceptable time frame. Gradient echo images were acquired from the human head of normal subjects using a transverse electromagnetic resonator operating in quadrature and tuned to 340 MHz. In each study, a group of six images was obtained containing a total of 208 MB of unprocessed information. Typical acquisition parameters were as follows: matrix = 2,000 x 2,000, field of view = 20 cm, slice thickness = 2 mm, number of excitations (NEX) = 1, flip angle = 45 degrees, TR = 750 ms, TE = 17 ms, receiver bandwidth = 69.4 kHz. This resulted in a total scan time of 23 minutes, an in-plane resolution of 100 microm, and a pixel volume of 0.02 mm3. The ultra high resolution images acquired in this study represent more than a 50-fold increase in in-plane resolution relative to conventional 256 x 256 images obtained with a 20 cm field of view and a 5 mm slice thickness. Nonetheless, the ultra high resolution images could be acquired both with adequate image quality and signal to noise. They revealed numerous small venous structures throughout the image plane and provided reasonable delineation between gray and white matter. The elevated signal-to-noise ratio observed in ultra high field magnetic resonance imaging can be utilized to acquire images with a level of resolution approaching the histological level under in vivo conditions. However, brain motion is likely to degrade the useful resolution. This situation may be remedied in part with cardiac gating. Nonetheless, these images represent a significant advance in our ability to examine small anatomical features with noninvasive imaging methods.

Achieving Mixtures of Ultra-High Performance Concrete

Directory of Open Access Journals (Sweden)

Mircea POPA

2013-07-01

Full Text Available Ultra-High Performance Concrete (UHPC is a relatively new concrete. According to [11] UHPC is that concrete which features compressive strength over C100/115 class. Up to this point standards for this type of concrete were not adopted, although its characteristic strength exceeds those specified in [33]. Its main property is high compressive strength. This provides the possibility of reducing the section of elements (beams or columns made of this type of concrete, while the load capacity remains high. The study consists in blending mixtures of UHPC made of varying proportions of materials. The authors have obtained strengths of up to 160 MPa. The materials used are: Portland cement, silica fume, quartz powder, steel fibers, superplasticiser, sand and crushed aggregate for concrete - andesite.

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

International Nuclear Information System (INIS)

Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

2016-01-01

Highlights: • A new kind of functional material with plasticity of dielectric was obtained. • Powerful characterization methods was exploited to determine this ultra-thin layer. • The electronic structures and properties of this intermediate layer were analyzed. • A potential application of this structure were investigated. - Abstract: A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

Energy Technology Data Exchange (ETDEWEB)

Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Ma, Zhongquan, E-mail: zqma@shu.edu.cn [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Instrumental Analysis & Research Center, Shanghai University, Shanghai 200444 (China)

2016-12-01

Highlights: • A new kind of functional material with plasticity of dielectric was obtained. • Powerful characterization methods was exploited to determine this ultra-thin layer. • The electronic structures and properties of this intermediate layer were analyzed. • A potential application of this structure were investigated. - Abstract: A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

mrsFAST-Ultra: a compact, SNP-aware mapper for high performance sequencing applications.

Science.gov (United States)

Hach, Faraz; Sarrafi, Iman; Hormozdiari, Farhad; Alkan, Can; Eichler, Evan E; Sahinalp, S Cenk

2014-07-01

High throughput sequencing (HTS) platforms generate unprecedented amounts of data that introduce challenges for processing and downstream analysis. While tools that report the 'best' mapping location of each read provide a fast way to process HTS data, they are not suitable for many types of downstream analysis such as structural variation detection, where it is important to report multiple mapping loci for each read. For this purpose we introduce mrsFAST-Ultra, a fast, cache oblivious, SNP-aware aligner that can handle the multi-mapping of HTS reads very efficiently. mrsFAST-Ultra improves mrsFAST, our first cache oblivious read aligner capable of handling multi-mapping reads, through new and compact index structures that reduce not only the overall memory usage but also the number of CPU operations per alignment. In fact the size of the index generated by mrsFAST-Ultra is 10 times smaller than that of mrsFAST. As importantly, mrsFAST-Ultra introduces new features such as being able to (i) obtain the best mapping loci for each read, and (ii) return all reads that have at most n mapping loci (within an error threshold), together with these loci, for any user specified n. Furthermore, mrsFAST-Ultra is SNP-aware, i.e. it can map reads to reference genome while discounting the mismatches that occur at common SNP locations provided by db-SNP; this significantly increases the number of reads that can be mapped to the reference genome. Notice that all of the above features are implemented within the index structure and are not simple post-processing steps and thus are performed highly efficiently. Finally, mrsFAST-Ultra utilizes multiple available cores and processors and can be tuned for various memory settings. Our results show that mrsFAST-Ultra is roughly five times faster than its predecessor mrsFAST. In comparison to newly enhanced popular tools such as Bowtie2, it is more sensitive (it can report 10 times or more mappings per read) and much faster (six times or

Efficient analysis for nonlinear microwave characteristics of high-power HTS thin film microstrip resonators

Energy Technology Data Exchange (ETDEWEB)

Kedar, Ashutosh [RADL Division, Electronics and Radar Development Establishment, C V Raman Nagar, Bangalore-560093 (India); Kataria, N D [National Physical Laboratory, New Delhi (India)

2005-08-01

This paper investigates the nonlinear effects of high-T{sub c} superconducting (HTS) thin film in high-power applications. A nonlinear model for complex surface impedance has been proposed for the efficient analysis of the nonlinearity of HTS thin films. Further, using the developed model, analysis of HTS-MSR has been done using the spectral domain method (SDM). The SDM formulation has been modified to account for finite conductivity and thickness of HTS films by incorporating a complex resistive boundary condition. The results have been validated with the experiments performed with microstrip resonators (MSRs) based on YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) thin films made by a laser ablation technique on LaAlO{sub 3} substrates, characterized for their characteristics, namely, resonant frequency and quality factor measured as a function of temperature and input RF power. A close agreement between the theoretical and measured results has been achieved validating the analysis.

Efficient analysis for nonlinear microwave characteristics of high-power HTS thin film microstrip resonators

International Nuclear Information System (INIS)

Kedar, Ashutosh; Kataria, N D

2005-01-01

This paper investigates the nonlinear effects of high-T c superconducting (HTS) thin film in high-power applications. A nonlinear model for complex surface impedance has been proposed for the efficient analysis of the nonlinearity of HTS thin films. Further, using the developed model, analysis of HTS-MSR has been done using the spectral domain method (SDM). The SDM formulation has been modified to account for finite conductivity and thickness of HTS films by incorporating a complex resistive boundary condition. The results have been validated with the experiments performed with microstrip resonators (MSRs) based on YBa 2 Cu 3 O 7-x (YBCO) thin films made by a laser ablation technique on LaAlO 3 substrates, characterized for their characteristics, namely, resonant frequency and quality factor measured as a function of temperature and input RF power. A close agreement between the theoretical and measured results has been achieved validating the analysis

Highly efficient 400  W near-fundamental-mode green thin-disk laser.