WorldWideScience

Sample records for high quality silicon

  1. Epitaxial Growth of High-Quality Silicon Films on Double-Layer Porous Silicon

    Institute of Scientific and Technical Information of China (English)

    黄宜平; 竺士炀; 李爱珍; 王瑾; 黄靖云; 叶志镇

    2001-01-01

    The epitaxial growth of a high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction,cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.

  2. High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; van Sark, W.G.J.H.M.; Rath, J.K.

    2011-01-01

    We investigate the influence of thermal annealing on the passivation quality of crystalline silicon (c-Si) surfaces by intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) films. For temperatures up to 255 C, we find an increase in surface passivation quality, corresponding to a decreased da

  3. High quality 3D shapes by silicon anodization

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, Alexey; Kovacs, Andras; Mescheder, Ulrich [Institute for Applied Research and Faculty of Computer and Electrical Engineering, Hochschule Furtwangen University, Robert-Gerwig-Platz 1, 78120 Furtwangen (Germany)

    2011-06-15

    In this paper some process considerations and optimizations of anodization for three-dimensional (3D)-structuring of silicon are discussed. For the shape controlling of etched form different approaches, such as frontside masking design, local backside doping and surface pre-structuring are presented. Influences of the opening size and etch depth on the shape of the etching form are investigated. The surface quality of the resulting 3D structures is critically dependent on the specific process parameters and process flow. Best surface quality was obtained for electropolishing in 7 wt.% hydrofluoric acid (HF) at applied current densities of 100-300 mA/cm{sup 2}. Application of 3D silicon forms for injection moulding is demonstrated and further implementations of the process for optical and fluidic devices are discussed. 3D silicon shapes fabricated using anodization process with local backside doping design. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. High-frequency and high-quality silicon carbide optomechanical microresonators

    OpenAIRE

    Xiyuan Lu; Lee, Jonathan Y.; Qiang Lin

    2015-01-01

    Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical quality into a single device. The radial-breathing mechanical mode has a mechanical frequency up to 1.69 GHz with a mechanical Q around 5500 in atmosphere, which corresponds to a mechanical f-Q product as high as 9.47x10^12 Hz. The strong optomechanical cou...

  5. High-Quality Alkyl Monolayers on Silicon Surfaces

    NARCIS (Netherlands)

    Sieval, A.B.; Linke, R.; Zuilhof, H.; Sudh"lter, E.J.R.

    2000-01-01

    Covalent attachment of functionalized monolayers onto silicon surfaces (see Figure for examples) is presented here as a strategy for surface modification. The preparation and structure of both unfunctionalized and functionalized alkyl-based monolayers are described, as are potential applications,

  6. High-frequency and high-quality silicon carbide optomechanical microresonators

    CERN Document Server

    Lu, Xiyuan; Lin, Qiang

    2015-01-01

    Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical quality into a single device. The radial-breathing mechanical mode has a mechanical frequency up to 1.69 GHz with a mechanical Q around 5500 in atmosphere, which corresponds to a mechanical f-Q product as high as 9.47x10^12 Hz. The strong optomechanical coupling allows us to efficiently excite and probe the coherent mechanical oscillation by optical waves. The demonstrated devices, in combination with the superior thermal property, chemical inertness, and defect characteristics of SiC, show great potential for applications in metrology, sensing, and quantum photonics, particularly in harsh environments that are challenging for other device platforms.

  7. Shear dependent nonlinear vibration in a high quality factor single crystal silicon micromechanical resonator

    Science.gov (United States)

    Zhu, H.; Shan, G. C.; Shek, C. H.; Lee, J. E.-Y.

    2012-07-01

    The frequency response of a single crystal silicon resonator under nonlinear vibration is investigated and related to the shear property of the material. The shear stress-strain relation of bulk silicon is studied using a first-principles approach. By incorporating the calculated shear property into a device-level model, our simulation closely predicts the frequency response of the device obtained by experiments and further captures the nonlinear features. These results indicate that the observed nonlinearity stems from the material's mechanical property. Given the high quality factor (Q) of the device reported here (˜2 × 106), this makes it highly susceptible to such mechanical nonlinear effects.

  8. High Quality Factor MBE-grown Aluminum on Silicon Planar Resonators

    Science.gov (United States)

    Megrant, Anthony; Chen, Z.; Chiaro, B.; Dunsworth, A.; Quintana, C.; Campbell, B.; Barends, R.; Chen, Y.; Fowler, A.; Hoi, I.-C.; Jeffrey, E.; Kelly, J.; Mutus, J.; Neill, C.; O'Malley, P. J. J.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; White, T.; Palmstrom, C.; Martinis, J. M.; Cleland, A. N.

    2015-03-01

    Linear arrays of planer Xmon qubit circuits fabricated using thin aluminum films on sapphire substrates have resulted in long coherence times and high fidelity gates. Scaling up to larger circuits, including two-dimensional qubit arrays, may however benefit from building circuits on silicon instead of sapphire substrates. I will present recent tests in this direction, reporting on measurements of superconducting coplanar waveguide resonators fabricated using aluminum films deposited on silicon in a molecular beam epitaxy (MBE) system. These resonators exhibit exceptional performance, with quality factors at low temperatures and single photon excitation energies exceeding 5x106. This research was funded by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA), through the Army Research Office Grant W911NF-09-1-0375.

  9. High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

    Science.gov (United States)

    He, Jian; Gao, Pingqi; Ling, Zhaoheng; Ding, Li; Yang, Zhenhai; Ye, Jichun; Cui, Yi

    2016-12-27

    Silicon/organic heterojunction solar cells (HSCs) based on conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and n-type silicon (n-Si) have attracted wide attention due to their potential advantages of high efficiency and low cost. However, the state-of-the-art efficiencies are still far from satisfactory due to the inferior junction quality. Here, facile treatments were applied by pretreating the n-Si wafer in tetramethylammonium hydroxide (TMAH) solution and using a capping copper iodide (CuI) layer on the PEDOT:PSS layer to achieve a high-quality Schottky junction. Detailed photoelectric characteristics indicated that the surface recombination was greatly suppressed after TMAH pretreatment, which increased the thickness of the interfacial oxide layer. Furthermore, the CuI capping layer induced a strong inversion layer near the n-Si surface, resulting in an excellent field effect passivation. With the collaborative improvements in the interface chemical and electrical passivation, a competitive open-circuit voltage of 0.656 V and a high fill factor of 78.1% were achieved, leading to a stable efficiency of over 14.3% for the planar n-Si/PEDOT:PSS HSCs. Our findings suggest promising strategies to further exploit the full voltage as well as efficiency potentials for Si/organic solar cells.

  10. Visible Photoluminescence from Cubic (3C) Silicon Carbide Microdisks Coupled to High Quality Whispering Gallery Modes

    CERN Document Server

    Radulaski, Marina; Müller, Kai; Lagoudakis, Konstantinos G; Zhang, Jingyuan Linda; Buckley, Sonia; Kelaita, Yousif A; Alassaad, Kassem; Ferro, Gabriel; Vučković, Jelena

    2014-01-01

    We present the design, fabrication and characterization of cubic (3C) silicon carbide microdisk resonators with high quality factor modes at visible and near infrared wavelengths (600 - 950 nm). Whispering gallery modes with quality factors as high as 2,300 and corresponding mode volumes V ~ 2 ({\\lambda}/n)^3 are measured using laser scanning confocal microscopy at room temperature. We obtain excellent correspondence between transverse-magnetic (TM) and transverse-electric (TE) polarized resonances simulated using Finite Difference Time Domain (FDTD) method and those observed in experiment. These structures based on ensembles of optically active impurities in 3C-SiC resonators could play an important role in diverse applications of nonlinear and quantum photonics, including low power optical switching and quantum memories.

  11. High Quality Factor Silicon Cantilever Driven by PZT Actuator for Resonant Based Mass Detection

    CERN Document Server

    Lu, Jian; Zhang, Yi; Mihara, Takashi; Itoh, Toshihiro; Maeda, Ryutaro

    2008-01-01

    A high quality factor (Q-factor) piezoelectric lead zirconat titanate (PZT) actuated single crystal silicon cantilever was proposed in this paper for resonant based ultra-sensitive mass detection. Energy dissipation from intrinsic mechanical loss of the PZT film was successfully compressed by separating the PZT actuator from resonant structure. Excellent Q-factor, which is several times larger than conventional PZT cantilever, was achieved under both atmospheric pressure and reduced pressures. For a 30 micrometer-wide 100 micrometer-long cantilever, Q-factor was measured as high as 1113 and 7279 under the pressure of 101.2 KPa and 35 Pa, respectively. Moreover, it was found that high-mode vibration can be realized by the cantilever for the pursuit of great Q-factor, while support loss became significant because of the increased vibration amplitude at the actuation point. An optimized structure using node-point actuation was suggested then to suppress corresponding energy dissipation.

  12. Self-Assembly of High-Quality Covalently Bound Organic Monolayers onto Silicon

    NARCIS (Netherlands)

    Scheres, L.M.W.; Arafat, A.; Zuilhof, H.

    2007-01-01

    A very mild method has been developed to obtain covalently attached alkyl monolayers from the attachment of 1-alkynes onto hydrogen-terminated silicon surfaces at room temperature in the dark. Apart from being the mildest method reported so far for the preparation of such monolayers, their quality,

  13. Synthesis of high-quality mesoporous silicon particles for enhanced lithium storage performance

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chundong, E-mail: apcdwang@hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Ren, Jianguo [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Chen, Hao [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Yi [School of Chemical Engineering and Pharmacy, Wuhan Institute of Technology, Wuhan, 430073 (China); Ostrikov, Kostya [School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane 4000, QLD (Australia); Manufacturing Flagship, CSIRO, P. O. Box 218, Lindfield, NSW 2070 (Australia); Zhang, Wenjun [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China)

    2016-04-15

    Silicon has been considered as one of the most promising anode materials for high-capacity lithium-ion batteries (LIBs) due to its ultrahigh theoretical capacity, abundance, and environmentally benign nature. Nonetheless, the severe break during the prolonged cycling results in poor electrochemical performance, which hinders its practical application. Herein, we report the synthesis of novel mesoporous silicon particles with a facile template method by using a magnesiothermic reduction for LIBs. The obtained silicon nanoparticles are highly porous with densely porous cavities (20–40 nm) on the wall, of which it presents good crystallization. Electrochemical measurements showed that the mesoporous silicon nanoparticles delivered a high reversible specific capacity of 910 mA h g{sup −1} at a high current density of 1200 mA g{sup −1} over 50 cycles. The specific capacity at such high current density is still over twofold than that of commercial graphite anode, suggesting that the nanoporous Si architectures is suitable for high-performance Si-based anodes for lithium ion batteries in terms of capacity, cycle life, and rate capacity. - Highlights: • Silica nanotubes were prepared with a facile template method. • Novel mesoporous silicon particles were obtained by magnesiothermic reduction. • High-Performance LIBs were achieved by using mesoporous Si particle Electrodes.

  14. High quality silicon-based substrates for microwave and millimeter wave passive circuits

    Science.gov (United States)

    Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

    2017-09-01

    Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

  15. Quality of silicon convex lenses fabricated by ultra-high precision diamond machining

    Directory of Open Access Journals (Sweden)

    Abou-El-Hossein, K.

    2013-05-01

    Full Text Available Infra-red optical components are made mainly from hard and brittle materials such as germanium and silicon. Silicon machining is characterised by some difficulties when ultra-high precision machined by mono-crystalline single-point diamond. Accelerated tool wear and machined-surface deterioration may take place if the machining parameters are not properly selected. In this study, we conducted a machining test on an ultra-high precision machine tool, using ductile regime cutting conditions when fabricating a convex surface on a silicon lens of aperture of 60 mm diameter, and using a mono-crystalline diamond. It was found that the cutting conditions for shaping a convex surface of 500 mm radius resulted in good form accuracy. However, more attention should be paid to optimising the holding force of the vacuum chuck employed.

  16. Gas phase considerations for the growth of device quality nanocrystalline silicon at high rate

    NARCIS (Netherlands)

    Rath, J.K.; Verkerk, A.D.; Liu, Y.; Brinza, M.; Goedheer, W.J.; Schropp, R.E.I.

    2008-01-01

    In order to increase industrial viability and to find niche markets, high deposition rate and low temperature depositions compared to standard deposition conditions are two recent trends in research areas concerning thin film silicon. In situ diagnostic tools to monitor gas phase conditions are usef

  17. Gas phase considerations for the growth of device quality nanocrystalline silicon at high rate

    NARCIS (Netherlands)

    J.K. Rath,; Verkerk, A. D.; Liu, Y.; Brinza, M.; W. J. Goedheer,; Schropp, R. E. I.

    2009-01-01

    In order to increase industrial viability and to find niche markets, high deposition rate and low temperature depositions compared to standard deposition conditions are two recent trends in research areas concerning thin film silicon. In situ diagnostic tools to monitor gas phase conditions are usef

  18. High quality plasma-enhanced chemical vapor deposited silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cotler, T.J.; Chapple-Sokol, J. (IBM General Technology Division, Hopewell Junction, NY (United States))

    1993-07-01

    The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.

  19. New Perspective of High-Pure Silicon

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    @@The discovery in the middle of 1950s of the semi-con ducting properties of crystalline silicon has led to the impetu ous development of electric power facilities, the sun-power industry, and particularly, the microelectronic industry. The increasing demand for the high-pure silicon requires the production of synthetic crystals. The raw material for the syn thetic crystals, the so-called technical, or metallurgical silicon, is obtained from quartzite and quartz of superior quality by means of carbon-thermal reduction of silicon using an electric arc discharge. The complexity of the technological process, high cost of the related facilities, worsening environmental pollution, and narrow-mindedness of a raw material company are attributed to the rise in price of the final product-silicon plates, resulting in the fall in the production of high-pure silicon, normally used in sun storage batteries.

  20. Research and development of photovoltaic power system. Development of novel technologies for fabrication of high quality silicon thin films for solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Kohinshitsu silicon usumaku sakusei gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, T. [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

    1994-12-01

    Described herein are the results of the FY1994 research program for development of novel technologies for fabrication of high quality thin films of silicon for solar cells. The study on the mechanisms and effects of chemical annealing reveals that the film structure greatly varies depending on substrate temperature during the hydrotreatment process, based on the tests with substrate temperature, deposition of superthin film (T1) and hydrotreatment (T2) as the variable parameters. Chemical annealing at low temperature produces a high-quality a-Si:H film of low defect content. The study on fabrication of thin polycrystalline silicon films at low temperature observes on real time the process of deposition of the thin films on polycrystalline silicon substrates, where a natural oxide film is removed beforehand from the substrate. The results indicate that a thin polycrystalline silicon film of 100% crystallinity can be formed even on a polycrystalline silicon substrate by controlling starting gas composition and substrate temperature. The layer-by-layer method is used as the means for forming the seed crystals on a glass substrate, where deposition and hydrotreatment are repeated alternately, to produce the thin crystalline silicon films of high crystallinity. 3 figs.

  1. High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

    Science.gov (United States)

    Vico Triviño, N.; Rossbach, G.; Dharanipathy, U.; Levrat, J.; Castiglia, A.; Carlin, J.-F.; Atlasov, K. A.; Butté, R.; Houdré, R.; Grandjean, N.

    2012-02-01

    We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and usual dry etching techniques. The membrane was released by underetching the Si (111) substrate. Micro-photoluminescence measurements performed at low temperature exhibit a quality factor as high as 5200 at ˜420 nm, a value suitable to expand cavity quantum electrodynamics to the near UV and the visible range and to develop nanophotonic platforms for biofluorescence spectroscopy.

  2. Deposition of device quality silicon nitride with ultra high deposition rate (> 7 nm/s) using hot-wire CVD

    NARCIS (Netherlands)

    Verlaan, V.; Houweling, Z.S.; van der Werf, C.H.M.; Romijn, I.G.; Schropp, R.E.I.; Goldbach, H.D.

    2008-01-01

    The application of hot-wire (HW) CVD deposited silicon nitride (SiNx) as passivating anti-reflection coating on multicrystalline silicon (mc-Si) solar cells is investigated. The highest efficiency reached is 15.7% for SiNx layers with an N/Si ratio of 1.20 and a high mass density of 2.9 g/cm3. These

  3. Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

    NARCIS (Netherlands)

    Sammak, A.

    2012-01-01

    Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

  4. Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

    NARCIS (Netherlands)

    Sammak, A.

    2012-01-01

    Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

  5. Technological development for super-high efficiency solar cells. Technological development of solar-high efficiency singlecrystalline silicon solar cells (high quality singlecrystalline silicon substrates); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Chokokoritsu tankessho silicon taiyo denchi no gijutsu kaihatsu (kohinshitsu tankessho silicon kiban no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development for high quality efficiency singlecrystalline silicon substrates in fiscal 1994. (1) On electromagnetic casting/once FZ bath method, a Si single crystal of 600mm long was successfully obtained by improvement of power source frequency and furnace parts. High carbon content resulted in no single crystal including solids. In undoped electromagnetic casting ingots, resistivities over 1500ohm-cm were obtained because of effective preventive measures from contaminants. (2) On electromagnetic melting CZ method, since vibration and temperature control of melt surface by magnetic shield was insufficient for stable pulling of single crystals, its practical use was hopeless. (3) On electron beam melting CZ method, a Si single crystal of 25mm in diameter was obtained by preventive measures from evaporation of Si and influence of deposits, and improved uniform deposition distribution in a furnace. The oscillation circuit constant of power source, and water-cooling copper crucible structure were also analyzed for the optimum design of electromagnetic melting furnaces. 3 figs., 1 tab.

  6. High-Quality ZrO2 Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

    Institute of Scientific and Technical Information of China (English)

    章宁琳; 万青; 宋志棠; 沈勤我; 祝向荣; 林成鲁

    2002-01-01

    Zirconium oxide films were deposited on p-type Si(l00) substrates using high vacuum electron beam evaporation (HVEBE) at room temperature. X-ray photoelectric spectroscopy shows that the dominant chemical state of zirconia thin films is in the fully oxidized state of Zr4+, no matter whether annealed in oxygen. The structural information from x-ray diffraction shows that zirconia thin films deposited at room temperature by HVEBEwere completely amorphous before and after the annealing. The spreading resistance profile indicates that ZrO2 thin films have excellent insulation property (with a resistance of more than 10s Ω) and the thickness is 800A.After thermal treatment at 600°C in O2 ambient, the root-mean-square roughness changed from 8.09 A of the as-deposited film to 13.8A across an area of i × 1μm2.

  7. Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire

    Institute of Scientific and Technical Information of China (English)

    Zhu Xiu-Hong; Chen Guang-Hua; Yin Sheng-Yi; Rong Yan-Dong; Zhang Wen-Li; Hu Yue-Hui

    2005-01-01

    The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability, and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71× 105.

  8. Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer

    Science.gov (United States)

    babu, G. Anandha; Takahashi, Isao; Matsushima, Satoru; Usami, Noritaka

    2016-05-01

    We propose to utilize single layer silicon beads (SLSB) coated with silicon nitride as cost-effective seed layer to grow high-quality multicrystalline silicon (mc-Si) ingot. The texture structure of silicon nitride provides a large number of nucleation sites for the fine grain formation at the bottom of the crucible. No special care is needed to prevent seed melting, which would lead to decrease of red zone owing to decrease of feedstock melting time. As we expected, mc-Si ingot seeded with SLSB was found to consist of small, different grain orientations, more uniform grain distribution, high percentage of random grain boundaries, less twin boundaries, and low density of dislocation clusters compared with conventional mc-Si ingot grown under identical growth conditions. These results show that the SLSB seeded mc-Si ingot has enhanced ingot quality. The correlation between grain boundary structure and defect structure as well as the reason responsible for dislocation clusters reduction in SLSB seeded mc-Si wafer are also discussed.

  9. Optical and spectroscopic characterizations of Algerian silica raw material to predict high quality solar-grade silicon

    Science.gov (United States)

    Kheloufi, A.; Bobocioiu, E.; Kerkar, F.; Kefaifi, A.; Anas, S.; Medjahed, S. A.; Belkacem, Y.; Keffous, A.

    2017-03-01

    We assess the potential use as raw material for photovoltaics of Algerian silica samples from the quartz veins of the Tirek deposit and quartz sandstones of the Ain Barda deposit. With 97-98% purity, they all require enrichment before their industrial utilization. Acid leaching and gravimetric separation are used to remove the impurities at the grain boundaries and within the crystal lattice. We obtain course, middle, and fine products. The acid leaching process and the gravimetric separation increase the content of SiO2 up to 99.68%; the residue concentration of iron, alumina and zirconium is decreased to 70, 72 and 58 ppm respectively. These values are in agreement with requirements for silica as raw material destined for solar-grade silicon production.

  10. Data Quality Monitoring for the CMS Silicon Tracker

    CERN Document Server

    Dutta, S; Mennea, Maria Santa; Zito, G

    2006-01-01

    The CMS silicon tracker, consisting of about 17,000 detector modules and divided into micro-strip and pixel sensors, will be the largest silicon tracker ever realized for high energy physics experiments. The detector performance will be monitored using applications based on the CMS Data Quality Monitoring\\,(DQM) framework and running on the High-Level Trigger Farm as well as local DAQ systems. The monitorable quantities of this large number of modules are divided into hierarchical structures reflecting the detector sections. In addition, they are organized into structures corresponding to the levels of data processing. The information produced are delivered to client applications according to their subscription requests. The client applications summarize and visualize the quantities received. We describe here the functionalities of the CMS tracker DQM applications and report preliminary performance tests.

  11. High precision optical finishing of lightweight silicon carbide aspheric mirror

    Science.gov (United States)

    Kong, John; Young, Kevin

    2010-10-01

    Critical to the deployment of large surveillance optics into the space environment is the generation of high quality optics. Traditionally, aluminum, glass and beryllium have been used; however, silicon carbide becomes of increasing interest and availability due to its high strength. With the hardness of silicon carbide being similar to diamond, traditional polishing methods suffer from slow material removal rates, difficulty in achieving the desired figure and inherent risk of causing catastrophic damage to the lightweight structure. Rather than increasing structural capacity and mass of the substrate, our proprietary sub-aperture aspheric surface forming technology offers higher material removal rates (comparable to that of Zerodur or Fused Silica), a deterministic approach to achieving the desired figure while minimizing contact area and the resulting load on the optical structure. The technology performed on computer-controlled machines with motion control software providing precise and quick convergence of surface figure, as demonstrated by optically finishing lightweight silicon carbide aspheres. At the same time, it also offers the advantage of ideal pitch finish of low surface micro-roughness and low mid-spatial frequency error. This method provides a solution applicable to all common silicon carbide substrate materials, including substrates with CVD silicon carbide cladding, offered by major silicon carbide material suppliers. This paper discusses a demonstration mirror we polished using this novel technology. The mirror is a lightweight silicon carbide substrate with CVD silicon carbide cladding. It is a convex hyperbolic secondary mirror with 104mm diameter and approximately 20 microns aspheric departure from best-fit sphere. The mirror has been finished with surface irregularity of better than 1/50 wave RMS @632.8 nm and surface micro-roughness of under 2 angstroms RMS. The technology has the potential to be scaled up for manufacturing capabilities of

  12. Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics.

    Science.gov (United States)

    Chen, Robert; Gupta, Suyog; Huang, Yi-Chiau; Huo, Yijie; Rudy, Charles W; Sanchez, Errol; Kim, Yihwan; Kamins, Theodore I; Saraswat, Krishna C; Harris, James S

    2014-01-08

    We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon. The structure theoretically exhibits many electronic and optical advantages in laser design, and microdisk resonators using these structures can be precisely fabricated away from highly defective regions in the Ge buffer using a novel etch-stop process. Photoluminescence measurements on 2.7 μm diameter microdisks reveal sharp whispering-gallery-mode resonances (Q > 340) with strong luminescence.

  13. High-Q silicon carbide photonic-crystal cavities

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jonathan Y. [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Institute of Optics, University of Rochester, Rochester, New York 14627 (United States)

    2015-01-26

    We demonstrate one-dimensional photonic-crystal nanobeam cavities in amorphous silicon carbide. The fundamental mode exhibits intrinsic optical quality factor as high as 7.69 × 10{sup 4} with mode volume ∼0.60(λ/n){sup 3} at wavelength 1.5 μm. A corresponding Purcell factor value of ∼10{sup 4} is the highest reported to date in silicon carbide optical cavities. The device exhibits great potential for integrated nonlinear photonics and cavity nano-optomechanics.

  14. Silicon carbide, an emerging high temperature semiconductor

    Science.gov (United States)

    Matus, Lawrence G.; Powell, J. Anthony

    1991-01-01

    In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

  15. Method for synthesis of high quality graphene

    Science.gov (United States)

    Lanzara, Alessandra [Piedmont, CA; Schmid, Andreas K [Berkeley, CA; Yu, Xiaozhu [Berkeley, CA; Hwang, Choonkyu [Albany, CA; Kohl, Annemarie [Beneditkbeuern, DE; Jozwiak, Chris M [Oakland, CA

    2012-03-27

    A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about 1500.degree. C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530.degree. C. or more, the carbon atoms self assemble themselves into graphene.

  16. PECVD Environmental Effects on Silicon Nanoparticle Size and Quality

    Science.gov (United States)

    Klafehn, Grant; Kendrick, Chito; Guan, Tianyuan; Theingi, San; Riskey, Kory; Vitti, Lauren; Bagolini, Luigi; Lusk, Mark; Gorman, Brian; Taylor, Craig; Collins, Reuben; Fields, Jeremy; Stradins, Paul

    2014-03-01

    Silicon based nanoparticles (SiNPs) have recently been of great interest to the PV community because of their unique properties compared to their bulk constituents. By decreasing a nanoparticle's (NP) size below its exciton Bohr radius, its band gap can be increased relative to the bulk. This talk will discuss fundamental variables involved in defining and controlling plasma-grown SiNP size and quality. A quartz tube with a RF electrode ring is used to create a plasma in an argon-silane mixture to grow the SiNPs. Their quality and size can be changed by varying the reactor pressure, gas flow, and thus the resulting residence time. They are then characterized by Raman, PL, ESR, XRD, and TEM, and then mapped to a phase diagram with respect to pressure and flow. Higher residence times of 10 ms resulted in highly crystalline, 7 nm SiNPs. Residence times of 2 ms create 4 nm particles, while below 2 ms will result in highly defective material, even though the PL exhibits peaks at 1.6 eV. These parameters will be discussed, including how each variable affects the resultant SiNP size, quality. Also included will be a discussion about additive gasses and their additional effects on SiNP characteristics. We acknowledge support given by the DOE (DE-EE0005326) and NSF REMRSEC (DMR 0820518).

  17. SU-E-T-163: Characterization of a Novel High Resolution 1D Silicon Monolithic Array for Small Field Commissioning and Quality Assurance

    Energy Technology Data Exchange (ETDEWEB)

    Bisello, F [FAU University Erlangen-Nuernberg, Erlangen, DE (Germany); IBA Dosimetry, Schwarzenbruck, DE (United States); McGlade, J; Wang, P; Kralik, J; Kosterin, P; Mooij, R; Solberg, T [University of Pennsylvenia, Philadelphia, PA (United States); Menichelli, D; Celi, J [IBA Dosimetry, Schwarzenbruck, DE (United States)

    2015-06-15

    Purpose: To study the suitability of a novel 1D silicon monolithic array for dosimetry of small radiation fields and for QA of high dose gradient treatment modalities (IMRT and SBRT). Methods: A 1D array composed of 4 monolithic silicon modules of 64 mm length and 1 mm pixel pitch was developed by IBA Dosimetry. Measurements were carried out for 6MV and 15MV photons on two commercial different linacs (TrueBeam and Clinac iX, Varian Medical Systems, Palo Alto, CA) and for a CyberKnife G4 (Accuray Inc., Sunnyvale, CA). The 1D array was used to measure output factors (OF), profiles and off axis correction factors (OACF) for the Iris CyberKnife variable collimator (5–60 mm). In addition, dose profiles (at the isocenter plane) were measured for multiple IMRT and SBRT treatment plans and compared with those obtained using EDR2radiographic film (Carestream Health, Rochester NY), a commercial 2D diode array and with the dose distribution calculated using a commercial TPS (Eclipse, Varian Medical Systems, Palo Alto, CA). Results: Due to the small pixel pitch of the detector, IMRT and SBRT plan profiles deviate from film measurements by less than 2%. Similarly, the 1D array exhibits better performance than the 2D diode array due to the larger (7 mm) pitch of that device. Iris collimator OFs measured using the 1D silicon array are in good agreement with the commissioning values obtained using a commercial stereotactic diode as well as with published data. Maximum deviations are < 3% for the smallest field (5 and 7.5mm) and below 1% for all other dimensions. Conclusion: We have demonstrated good performances of the array for commissioning of small photon fields and in patient QA, compared with diodes and film typically used in these clinical applications. The technology compares favorably with existing commercial solutions The presenting author is founded by a Marie Curie Early Initial Training Network Fellowship of the European Communitys Seventh Framework Programme under

  18. Silicon Carbide Nanotube Oxidation at High Temperatures

    Science.gov (United States)

    Ahlborg, Nadia; Zhu, Dongming

    2012-01-01

    Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

  19. Research and development of photovoltaic power system. Study on growth mechanism of a-Si:H and preparation of the stable, high quality films; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon no seimaku kiko to kohinshitsuka

    Energy Technology Data Exchange (ETDEWEB)

    Hirose, M. [Hiroshima University, Hiroshima (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a film forming mechanism for amorphous silicon for solar cells and its quality improvement. In in-situ observation on plasma CVD surface reaction by using the total reflection infrared absorbing spectroscopy, an observation on a real time basis was performed on the reaction process of an a-Si:H surface in contact with gas mixture plasma composed of SiH4 + CH4. In microscopic observation on initial processes of amorphous silicon growth, surface morphological change before and after a-Si:H deposition at 200{degree}C was observed by using an inter-atomic force microscope. The observation verified that a-Si:H has grown to an atomic layer. In research on defect density in a-Si:H fabricated under high-speed film forming conditions, analysis was made on correlation between the film forming speed at 250{degree}C and defect density in the film. Other research works include those on a high-quality a-SiGe:H film fabricated by using the nanometer film forming/hydrogen plasma annealing method, modulated doping into multi-layer films of a-Si:H/a-Ge:H, and thin film transistor using very thin multi layer films of a-Si:H/a-Ge:H. 5 refs., 12 figs.

  20. Silicon carbide high performance optics: a cost-effective, flexible fabrication process

    Science.gov (United States)

    Casstevens, John M.; Rashed, Abuagela; Plummer, Ronald; Bray, Don; Gates, Rob L.; Lara-Curzio, Edgar; Ferber, Matt K.; Kirkland, Tim

    2001-12-01

    Silicon carbide may well be the best known material for the manufacture of high performance optical components. This material offers many advantages over glasses and metals that have historically been used in high performance optical systems. A combination of extremely high specific stiffness (E/r), high thermal conductivity and outstanding dimensional stability make silicon carbide superior overall to beryllium and low-expansion glass ceramics. A major impediment to wide use of silicon carbide in optical systems has been the cost associated with preliminary shaping and final finishing of silicon carbide. Because silicon carbide is an extremely hard and strong material, precision machining can only be done with expensive diamond tooling on very stiff high quality machine tools. Near-net-shape slip casting of silicon carbide can greatly reduce the cost of silicon carbide mirror substrates but this process still requires significant diamond grinding of the cast components. The process described here begins by machining the component from all special type of graphite. This graphite can rapidly be machined with conventional multi-axis CNC machine tools to achieve any level of complexity and lightweighting required. The graphite is then directly converted completely to silicon carbide with very small and very predictable dimensional change. After conversion to silicon carbide the optical surface is coated with very fine grain CVD silicon carbide which is easily polished to extreme smoothness. Details of the fabrication process are described and photos and performance specifications of an eight-inch elliptical demonstration mirror are provided.

  1. High-Index Contrast Silicon Rich Silicon Nitride Optical Waveguides and Devices

    DEFF Research Database (Denmark)

    Philipp, Hugh Taylor

    2004-01-01

    This research focused on the realization of high-density integrated optical devices made with high-index contrast waveguides. The material platform used for to develop these devices was modeled after standard silicon on silicon technology. The high-index waveguide core material was silicon rich...... silicon nitride. This provided a sharp contrast with silica and made low-loss waveguide bending radii less than 25mm possible. An immediate consequence of such small bending radii is the ability to make practical ring resonator based devices with a large free spectral range. Several ring resonator based...

  2. Silicon, the silver bullet for mitigating biotic and abiotic stress, and improving grain quality, in rice?

    OpenAIRE

    Meharg,Caroline; Andrew A Meharg

    2015-01-01

    Adequate silicon fertilization greatly boosts rice yield and mitigates biotic and abiotic stress, and improves grain quality through lowering the content of cadmium and inorganic arsenic. This review on silicon dynamics in rice considers recent advances in our understanding of the role of silicon in rice, and the challenges of maintaining adequate silicon fertility within rice paddy systems. Silicon is increasingly considered as an element required for optimal plant performance, particularly ...

  3. High-optical-quality blends of anionic polymethine salts and polycarbonate with enhanced third-order non-linearities for silicon-organic hybrid devices.

    Science.gov (United States)

    Li, Zhong'an; Liu, Yang; Kim, Hyeongeu; Hales, Joel M; Jang, Sei-Hum; Luo, Jingdong; Baehr-Jones, Tom; Hochberg, Michael; Marder, Seth R; Perry, Joseph W; Jen, Alex K-Y

    2012-11-20

    A series of anionic polymethine dyes with different aromatic counterions are prepared to improve their compatibility as guests in an amorphous polycarbonate host. When they are used as the cladding material for silicon hybrid slot waveguides, four-wave mixing wavelength conversion and two-photon absorption-based optical-power modulation are observed. Such guest-host materials may be attractive candidates for all-optical signal-processing applications.

  4. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  5. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss....... A sample double ring add-drop filter is presented....

  6. High-performance silicon nanowire bipolar phototransistors

    Science.gov (United States)

    Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

    2016-07-01

    Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

  7. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Boeckl, John J.; Hellerstedt, Jack; Fuhrer, Michael S.; Iacopi, Francesca

    2016-07-01

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High-resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  8. Generation of high harmonics from silicon

    CERN Document Server

    Vampa, Giulio; Thiré, Nicolas; Schmidt, Bruno E; Légaré, Francois; Klug, Dennis D; Corkum, Paul B

    2016-01-01

    We generate high-order harmonics of a mid-infrared laser from a silicon single crystal and find their origin in the recollision of coherently accelerated electrons with their holes, analogously to the atomic and molecular case, and to ZnO [Vampa et al., Nature 522, 462-464 (2015)], a direct bandgap material. Therefore indirect bandgap materials are shown to sustain the recollision process as well as direct bandgap materials. Furthermore, we find that the generation is perturbed with electric fields as low as 30 V/$\\mu$m, equal to the DC damage threshold. Our results extend high-harmonic spectroscopy to the most technologically relevant material, and open the possibility to integrate high harmonics with conventional electronics.

  9. High deposition rate processes for the fabrication of microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Michard, S. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Meier, M., E-mail: ma.meier@fz-juelich.de [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Grootoonk, B.; Astakhov, O.; Gordijn, A.; Finger, F. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany)

    2013-05-15

    The increase of deposition rate of microcrystalline silicon absorber layers is an essential point for cost reduction in the mass production of thin-film silicon solar cells. In this work we explored a broad range of plasma enhanced chemical vapor deposition (PECVD) parameters in order to increase the deposition rate of intrinsic microcrystalline silicon layers keeping the industrial relevant material quality standards. We combined plasma excitation frequencies in the VHF band with the high pressure high power depletion regime using new deposition facilities and achieved deposition rates as high as 2.8 nm/s. The material quality evaluated from photosensitivity and electron spin resonance measurements is similar to standard microcrystalline silicon deposited at low growth rates. The influence of the deposition power and the deposition pressure on the electrical and structural film properties was investigated.

  10. Quality assurance database for the CBM silicon tracking system

    Energy Technology Data Exchange (ETDEWEB)

    Lymanets, Anton [Physikalisches Institut, Universitaet Tuebingen (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The Silicon Tracking System is a main tracking device of the CBM Experiment at FAIR. Its construction includes production, quality assurance and assembly of large number of components, e.g., 106 carbon fiber support structures, 1300 silicon microstrip sensors, 16.6k readout chips, analog microcables, etc. Detector construction is distributed over several production and assembly sites and calls for a database that would be extensible and allow tracing the components, integrating the test data, monitoring the component statuses and data flow. A possible implementation of the above-mentioned requirements is being developed at GSI (Darmstadt) based on the FAIR DB Virtual Database Library that provides connectivity to common SQL-Database engines (PostgreSQL, Oracle, etc.). Data structure, database architecture as well as status of implementation are discussed.

  11. High temperature deformation of silicon steel

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Calvillo, Pablo, E-mail: pablo.rodriguez@ctm.com.es [CTM - Technologic Centre, Materials Technology Area, Manresa, Cataluna (Spain); Department of Materials Science and Metallurgical Engineering, Universidad Politecnica de Cataluna, Barcelona (Spain); Houbaert, Yvan, E-mail: Yvan.Houbaert@UGent.be [Department of Materials Science and Engineering, University of Ghent (Belgium); Petrov, Roumen, E-mail: Roumen.Petrov@ugent.be [Department of Materials Science and Engineering, University of Ghent (Belgium); Kestens, Leo, E-mail: Leo.kestens@ugent.be [Department of Materials Science and Engineering, University of Ghent (Belgium); Colas, Rafael, E-mail: rafael.colas@uanl.edu.mx [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia, Universidad Autonoma de Nuevo Leon (Mexico)

    2012-10-15

    The microstructure and texture development during high temperature plane strain compression of 2% in weight silicon steel was studied. The tests were carried out at a constant strain rate of 5 s{sup -1} with reductions of 25, 35 and 75% at temperatures varying from 800 to 1100 Degree-Sign C. The changes in microstructure and texture were studied by means of scanning electron microscopy and electron backscattered diffraction. The microstructure close to the surface of the samples was equiaxed, which is attributed to the shear caused by friction, whereas that at the centre of the specimens was made of a mixture of elongated and fine equiaxed grains, the last ones attributed to the action of dynamic recovery followed by recrystallization. It was found that the volume fraction of these equiaxed grains augmented as reduction and temperature increased; a 0.7 volume fraction was accomplished with a 75% reduction at 1100 Degree-Sign C. The texture of the equiaxed and elongated grains was found to vary with the increase of deformation and temperature, as the {gamma}-fibre tends to disappear and the {alpha}-fibre to increase towards the higher temperature range. -- Highlights: Black-Right-Pointing-Pointer The plastic deformation of a silicon containing steel is studied by plane strain compression. Black-Right-Pointing-Pointer Equiaxed and elongated grains develop in different regions of the sample due to recrystallization. Black-Right-Pointing-Pointer Texture, by EBSD, is revealed to be similar in either type of grains.

  12. Production of high specific activity silicon-32

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, D.R. [Los Alamos National Lab., NM (United States); Brzezinski, M.A. [Univ. of California, Santa Barbara, CA (United States). Marine Biotechnology Center

    1998-12-31

    This is the final report of a three-year, Laboratory Directed Research and Development Project (LDRD) at Los Alamos National Laboratory (LANL). There were two primary objectives for the work performed under this project. The first was to take advantage of capabilities and facilities at Los Alamos to produce the radionuclide {sup 32}Si in unusually high specific activity. The second was to combine the radioanalytical expertise at Los Alamos with the expertise at the University of California to develop methods for the application of {sup 32}Si in biological oceanographic research related to global climate modeling. The first objective was met by developing targetry for proton spallation production of {sup 32}Si in KCl targets and chemistry for its recovery in very high specific activity. The second objective was met by developing a validated field-useable, radioanalytical technique, based upon gas-flow proportional counting, to measure the dynamics of silicon uptake by naturally occurring diatoms.

  13. Device-quality Intrinsic Microcrystalline Silicon Prepared by 13.56MHz PECVD at High Pressure%高压13.56MHz PECVD法沉积器件质量级本征微晶硅材料

    Institute of Scientific and Technical Information of China (English)

    侯国付; 李以钢; 郭群超; 王岩; 薛俊明; 任慧志; 宋建; 张晓丹; 赵颖; 耿新华

    2005-01-01

    In this paper intrinsic hydrogenated microcrystalline silicon (μc-Si: H) thin films and solar cells prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) method at high pressure are reported. Our experimental results demonstrated that either increasing plasma power or decreasing silane concentration always can lead to structural transition from amorphous silicon to microcrystalline silicon, and then the electrical properties changed along with the micro-structural evolution. By optimizing process parameters and using gas purifier, the oxygen concentration was prohibited effectively and then device-qualityμc-Si: H thin films have been got at a relative high deposition rate. Their applications as absorber layers in single-junctionμc-Si: H solar cells with 1.5μm i-layer yielded conversion efficiency of 5.22% without ZnO back reflector and without optimizing p-layer and p/i interface.%本文国内首次报道了采用高压RF-PECVD技术沉积本征微晶硅材料的结果.实验表明,增大等离子体激发功率和减小硅烷浓度都能够使薄膜材料由非晶硅逐渐向微晶硅转变,而结构上的改变使得电学特性也随之改变.通过工艺参数的优化和纯化器的使用,有效地控制了氧的掺杂,在较高的生长速度下得到了器件质量级的本征微晶硅材料.将实验得到的微晶硅作为太阳电池光吸收层,在没有ZnO背电极和没有优化窗口层材料以及p/i界面时,电池的效率达到5.22%,这进一步表明本征微晶硅材料的良好性能.

  14. Highly nonlinear photoluminescence threshold in porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Nayfeh, M. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Akcakir, O. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Therrien, J. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Yamani, Z. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Barry, N. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Yu, W. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Gratton, E. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

    1999-12-27

    Porous silicon is excited using near-infrared femtosecond pulsed and continuous wave radiation at an average intensity of {approx}10{sup 6} W/cm{sup 2} (8x10{sup 10} W/cm{sup 2} peak intensity in pulsed mode). Our results demonstrate the presence of micron-size regions for which the intensity of the photoluminescence has a highly nonlinear threshold, rising by several orders of magnitude near this incident intensity for both the pulsed and continuous wave cases. These results are discussed in terms of stimulated emission from quantum confinement engineered intrinsic Si-Si radiative traps in ultrasmall nanocrystallites, populated following two-photon absorption. (c) 1999 American Institute of Physics.

  15. High pressure Raman scattering of silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Khachadorian, Sevak; Scheel, Harald; Thomsen, Christian [Institut fuer Festkoerperphysik, Technische Universitaet Berlin, 10623 Berlin (Germany); Papagelis, Konstantinos [Materials Science Department, University of Patras, 26504 Patras (Greece); Colli, Alan [Nokia Research Centre, 21 J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Ferrari, Andrea C, E-mail: khachadorian@physik.tu-berlin.de [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom)

    2011-05-13

    We study the high pressure response, up to 8 GPa, of silicon nanowires (SiNWs) with {approx} 15 nm diameter, by Raman spectroscopy. The first order Raman peak shows a superlinear trend, more pronounced compared to bulk Si. Combining transmission electron microscopy and Raman measurements we estimate the SiNWs' bulk modulus and the Grueneisen parameters. We detect an increase of Raman linewidth at {approx} 4 GPa, and assign it to pressure induced activation of a decay process into LO and TA phonons. This pressure is smaller compared to the {approx} 7 GPa reported for bulk Si. We do not observe evidence of phase transitions, such as discontinuities or change in the pressure slopes, in the investigated pressure range.

  16. Preparation of Silicon Carbide with High Properties

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to prepare silicon carbide with high properties, three kinds of SiC powders A, B, and C with different composition and two kinds of additives, which were Y2O3-Al2O3 system and Y2O3-La2O3 system, were used in this experiment. The properties of hot-pressed SiC ceramics were measured. With the same additives, different SiC powder resulted in different properties. On the other hand, with the same SiC powder, increasing the amount of the additive Y2O3-Al2O3 improved properties of SiC ceramics at room temperature, and increasing the amount of the additive Y2O3-La2O3 improved property SiC ceramics at elevated temperature. In addition, the microstructure of SiC ceramics was studied by scanning electron microscopy.

  17. Effect of High Coal Injection on Low Silicon Ironmaking Process

    Institute of Scientific and Technical Information of China (English)

    JIN Yong-long; XU Nan-ping; WU Shi-ying

    2003-01-01

    The effects of different coal ratios and reaction temperatures on silicon content in hot metal were studied under the condition of high powder coal injection (PCI) ratio in laboratory. The samples of coke taken from tuyere were analyzed by chemical methods. According to the remnant silicon dioxide in different samples, the effect of PCI ratio on silicon content in hot metal was studied in tuyere area. The results can not only certify the traditional theory, but also explain the relation between high PCI ratio and low silicon.

  18. Micro-machined high capacity silicon load cells

    NARCIS (Netherlands)

    Zwijze, A.F.

    2000-01-01

    The aim of the research presented in this thesis is to improve the performance of high capacity conventional load cells or force sensors by using silicon as the base material. Silicon is used because it offers the possibility of realising small, light, low cost and high performance mechanical sensor

  19. High Detectivity Graphene-Silicon Heterojunction Photodetector.

    Science.gov (United States)

    Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

    2016-02-01

    A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors.

  20. Quality assurance of double-sided silicon strip sensors for silicon tracking system in the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel; Ghosh, Pradeep [Goethe Univ. Frankfurt am Main (Germany); Collaboration: CBM-Collaboration

    2013-07-01

    Silicon Tracking System (STS) is the central tracking detector of Compressed Baryonic Matter (CBM) experiment that aims to explore the QCD phase diagram in the region of high net baryonic densities and moderate temperatures. STS consists of 8 tracking layers of double-sided silicon strip sensors with self-triggered read-out system. The challenge is to cope with high hit rates up to 10 MHz/cm{sup 2}, high tracking density, high radiation load up to 1 x 10{sup 14} n{sub eq}/cm{sup 2} and high momentum resolution for the physics case. Hence, the Quality Assurance (QA) procedures become important in the process of building up modules and stations of these sensors. This presentation describes the various QA tests and procedures that need to be performed to identify the viability, performance and efficiency of these sensors for tracking system in CBM experiment.In particular QA in CBM-STS includes visual inspection, bulk and interstrip parameters measurements, sensor efficiency and total signal to noise ratio tests, measurements of irradiated sensors, bonding, low temperature performance and current stability tests. Results of various QA tests of sensor prototypes are shown.

  1. Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

    Science.gov (United States)

    Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

    2014-01-01

    Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

  2. High-Q silicon-on-insulator optical rib waveguide racetrack resonators

    Science.gov (United States)

    Kiyat, Isa; Aydinli, Atilla; Dagli, Nadir

    2005-03-01

    In this work, detailed design and realization of high quality factor (Q) racetrack resonators based on silicon-on-insulator rib waveguides are presented. Aiming to achieve critical coupling, suitable waveguide geometry is determined after extensive numerical studies of bending loss. The final design is obtained after coupling factor calculations and estimation of propagation loss. Resonators with quality factors (Q) as high as 119000 has been achieved, the highest Q value for resonators based on silicon-on-insulator rib waveguides to date with extinction ratios as large as 12 dB.

  3. High-Q silicon-on-insulator optical rib waveguide racetrack resonators.

    Science.gov (United States)

    Kiyat, Isa; Aydinli, Atilla; Dagli, Nadir

    2005-03-21

    In this work, detailed design and realization of high quality factor (Q) racetrack resonators based on silicon-on-insulator rib waveguides are presented. Aiming to achieve critical coupling, suitable waveguide geometry is determined after extensive numerical studies of bending loss. The final design is obtained after coupling factor calculations and estimation of propagation loss. Resonators with quality factors (Q) as high as 119000 has been achieved, the highest Q value for resonators based on silicon-on-insulator rib waveguides to date with extinction ratios as large as 12 dB.

  4. Low cost routes to high purity silicon and derivatives thereof

    Energy Technology Data Exchange (ETDEWEB)

    Laine, Richard M; Krug, David James; Marchal, Julien Claudius; Mccolm, Andrew Stewart

    2013-07-02

    The present invention is directed to a method for providing an agricultural waste product having amorphous silica, carbon, and impurities; extracting from the agricultural waste product an amount of the impurities; changing the ratio of carbon to silica; and reducing the silica to a high purity silicon (e.g., to photovoltaic silicon).

  5. Intraocular inflammation following endotamponade with high-density silicone oil.

    NARCIS (Netherlands)

    Theelen, T.; Tilanus, M.A.D.; Klevering, B.J.

    2004-01-01

    BACKGROUND: The use of a mixture of silicone oil and partially fluorinated alkanes (high-density silicone oil) has recently been suggested as intraocular tamponade in complicated retinal detachment of the inferior quadrants. We describe a series of patients who developed a clinical picture resemblin

  6. SYNTHESIS OF HIGH THERMOSTABLE SILICONE GELS CONSTRUCTED WITH LADDERLIKE POLYSILSESQUIOXANES

    Institute of Scientific and Technical Information of China (English)

    Huai-zhong Pan; Ming Cao; Jian-hua Luo; Ping Xie; Rong-ben Zhang; Yu-hui Lin; Neal Tai-sheng Chung

    2000-01-01

    Heat-resistant silicone gels were synthesized by replacing the single main chain polymethylhydrosiloxane with reactive ladderlike polyhydrosilsesquioxane copolymers. Because of the interaction between polydimethylsiloxane chains and the ladderlike polysilsesquioxanes chains, the cyclization of the polydimethylsiloxane chains is hindered. The high thermal stability of the ladderlike polymers can improve the thermal stability of the silicone gels without sacrificing their good comprehensive properties.

  7. A review of high-efficiency silicon solar cells

    Science.gov (United States)

    Rohatgi, A.

    1986-01-01

    Various parameters that affect solar cell efficiency were discussed. It is not understood why solar cells produced from less expensive Czochralski (Cz) silicon are less efficient than cells fabricated from more expensive float-zone (Fz) silicon. Performance characteristics were presented for recently produced, high-efficient solar cells fabricated by Westinghouse Electric Corp., Spire Corp., University of New South Wales, and Stanford University.

  8. Intraocular inflammation following endotamponade with high-density silicone oil.

    NARCIS (Netherlands)

    Theelen, T.; Tilanus, M.A.D.; Klevering, B.J.

    2004-01-01

    BACKGROUND: The use of a mixture of silicone oil and partially fluorinated alkanes (high-density silicone oil) has recently been suggested as intraocular tamponade in complicated retinal detachment of the inferior quadrants. We describe a series of patients who developed a clinical picture

  9. Recent Progress in Silicon Electro-optic Modulators for High Speed Applications

    Institute of Scientific and Technical Information of China (English)

    XIAO Xi; YU Jin-zhong

    2008-01-01

    Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.

  10. Self-Healing, High-Permittivity Silicone Dielectric Elastomer

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

    2016-01-01

    or cuts made directly to the material due to the reassembly of the ionic bonds that are broken during damage. The dielectric elastomers presented in this paper pave the way to increased lifetimes and the ability of dielectric elastomers to survive millions of cycles in high-voltage conditions....... possesses high dielectric permittivity and consists of an interpenetrating polymer network of silicone elastomer and ionic silicone species that are cross-linked through proton exchange between amines and acids. The ionically cross-linked silicone provides self-healing properties after electrical breakdown...

  11. Silicon sheet with molecular beam epitaxy for high efficiency solar cells

    Science.gov (United States)

    Allen, F. G.

    1983-01-01

    The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

  12. Silicon nitride ceramic having high fatigue life and high toughness

    Science.gov (United States)

    Yeckley, Russell L.

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  13. Silicon carbide materials for high duty seal applications

    Energy Technology Data Exchange (ETDEWEB)

    Berroth, K.E. (Schunk Ingenieurkeramik GmbH, Duesseldorf (Germany, F.R.))

    1990-12-01

    Properties, fabrication, and high-duty applications of silicon carbide grades are discussed. The two types of silicon carbide, i.e., reaction-bonded and sintered, are considered. The potential for adhesion and the lack of dry running abilities lead to a variety of microstructures. For reaction-bonded silicon carbide, the microstructure can be a tool for optimization of the tribological behavior. Besides the high corrosion resistance of the material, its thermal conductivity is excellent. Grain sizes of about 40-50 microns are used in high-duty applications. Reaction-bonded silicon carbide with residual content of carbon graphite has improved tribological/hydrodynamic characteristics and performs well in sealing hard faces.

  14. Achievement report for fiscal 1997. Technological development for practical application of a solar energy power generation system /development of technology to manufacture solar cells/development of technology to manufacture thin film solar cells (development of technology to manufacture materials and substrates (development of technology to manufacture silicon crystal based high-quality materials and substrates)); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyo denchi seizo gijutsu kaihatsu, usumaku taiyo denchi seizo gijutsu kaihatsu, zairyo kiban seizo gijutsu kaihatsu (silicon kesshokei kohinshitsu zairyo kiban no seizo gujutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    It is intended to develop thin film solar cells capable of mass production with high photo-stability and at low cost. Thus, the objective of the present research is to analyze the growth process of micro crystal silicon based thin films, the crystal being a high quality silicon crystal based material, and develop technology to manufacture high-quality micro crystal silicon thin films based on the findings therefrom. It was found that, when silicon source is available in cathode, pure hydrogen plasma forms micro crystal silicon films by using the plasma as a result of the chemical transportation effect from the silicon source. It was revealed that the crystal formation due to hydrogen plasma exposure is performed substantially by the crystals forming the films due to the chemical transportation effect, rather than crystallization in the vicinity of the surface. The crystal formation under this experiment was concluded that the formation takes place during film growth accompanied by diffusion of film forming precursors on the surface on which the film grows. According to the result obtained so far, the most important issue in the future is particularly the control of crystal growing azimuth by reducing the initially formed amorphous layer by controlling the stress in the initial phase for film formation, and by controlling the film forming precursors. (NEDO)

  15. Uniform delivery of silicon nanoparticles on device quality substrates using spin coating from isopropyl alcohol colloids

    Science.gov (United States)

    Nayfeh, Osama M.; Antoniadis, Dimitri A.; Mantey, Kevin; Nayfeh, Munir H.

    2009-01-01

    Silicon nanoparticles, of predominately 2.9 nm in size, in isopropyl alcohol are spin coated directly on device quality silicon-dioxide layers across 150 mm substrates. Atomic force microscopy (AFM) is used to image the nanoparticle distributions and low levels of agglomeration with apparently regular internanoparticle distances are observed. AFM depth profiling of the nanoparticle size is in agreement with independent high resolution transmission electron microscopy measurements. Hartree-Fock based atomistic simulations confirm the possible formation of Si nanoparticle/isopropanol complexes with a calculated electrostatic binding energy of 30 meV, which is slightly larger than the room temperature thermal agitation energy. The low levels of agglomeration can be explained in terms of such complexes that may regulate the internanoparticle and nanoparticle-solvent interactions.

  16. Field effect passivation of high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Aberle, A.G. (Fraunhofer-Inst. fuer Solare Energiesysteme (ISE), Freiburg (Germany)); Glunz, S. (Fraunhofer-Inst. fuer Solare Energiesysteme (ISE), Freiburg (Germany)); Warta, W. (Fraunhofer-Inst. fuer Solare Energiesysteme (ISE), Freiburg (Germany))

    1993-03-01

    In this paper effective surface recombination velocities S[sub eff] at the rear Si-SiO[sub 2] interface of the presently best one-sun silicon solar cell structure are calculated on the basis of measured oxide parameters. A new cell design is proposed allowing for a control of the surface space charge region by a gate voltage. It is shown that the electric field introduced by the positive fixed oxide charge density typically found at thermally oxidized silicon surfaces and the favorable work function difference between the gate metal aluminum and silicon leads to a reduction of S[sub eff] to values well below 1 cm/s at AM1.5 illumination for n-type as well as p-type silicon. At low illumination levels, however, oxidized n-type silicon has much better surface passivation properties than p-type silicon due to the small hole capture cross section ([sigma][sub n]/[sigma][sub p][approx]1000 at midgap). Only at small illumination intensities for p-type substrates or in the case of poor Si-SiO[sub 2] interface quality the incorporation of a gate electrode on the rear surface is a promising tool for further reducing surface recombination losses. (orig.)

  17. High aspect ratio transmission line circuits micromachined in silicon

    Science.gov (United States)

    Todd, Shane Truman

    The performance of complimentary metal-oxide-semiconductor (CMOS) monolithic microwave integrated circuits (MMICs) fabricated on silicon has improved dramatically. The scaling down of silicon transistors has increased the maximum frequency of transistors to the point where silicon MMICs have become a viable alternative to compound semiconductor MMICs in certain applications. A fundamental problem still exists in silicon MMICs however in that transmission lines fabricated on silicon can suffer from high loss due to the finite conductivity of the silicon substrate. A novel approach for creating low-loss transmission lines on silicon is presented in this work. Low-loss transmission lines are created on low resistivity silicon by using a micromachining method that combines silicon deep reactive ion etching (DRIE), thermal oxidation, electroplating, and planarization. Two types of high aspect ratio transmission lines are created with this method including high aspect ratio coplanar waveguide (hicoplanar) and semi-rectangular coaxial (semicoaxial). Transmission lines with impedances ranging from 20--80 O have been fabricated with minimum measured loss lower than 1 dB/cm at 67 GHz. Low-loss dielectrics are created for the high aspect ratio transmission lines using the mesa merging method. The mesa merging method works by creating silicon mesa arrays using DRIE and then converting and merging the mesa arrays into a solid oxide dielectric using thermal oxidation. The transmission lines are designed so that the fields penetrate the low-loss oxide dielectric and are isolated from the lossy silicon substrate. The mesa merging method has successfully created large volume oxide with depth up to 65 microm and width up to 240 microm in short oxidation times. Other advantages of the high aspect ratio transmission lines are demonstrated including low-loss over a wide impedance range, high isolation, and high coupling for coupled-line circuits. Transmission line models have been

  18. A high-Tc superconductor bolometer on a silicon nitridemembrane

    NARCIS (Netherlands)

    Sanchez, S.; Elwenspoek, M.C.; Gui, C.; Nivelle, de M.J.M.E.; Vries, de R.; Korte, de P.A.J.; Bruijn, M.P.; Schwierzi, B.

    1997-01-01

    In this paper we describe the design, fabrication and performance of a high-Tc GdBa2Cu3O7-δ superconductor bolometer positioned on a 2×2 mm2, 1 μm thick silicon nitride membrane. The bolometer structure has an effective area of 0.64 mm2 and was grown on a specially developed silicon-on-nitride layer

  19. High efficiency silicon solar cell review

    Science.gov (United States)

    Godlewski, M. P. (Editor)

    1975-01-01

    An overview is presented of the current research and development efforts to improve the performance of the silicon solar cell. The 24 papers presented reviewed experimental and analytic modeling work which emphasizes the improvment of conversion efficiency and the reduction of manufacturing costs. A summary is given of the round-table discussion, in which the near- and far-term directions of future efficiency improvements were discussed.

  20. Silicon-embedded copper nanostructure network for high energy storage

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Tianyue

    2016-03-15

    Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

  1. Displacement damage effects in silicon MEMS at high proton doses

    Science.gov (United States)

    Gomes, João; Shea, Herbert R.

    2011-02-01

    We report on a study of the sensitivity of silicon MEMS to proton radiation and mitigation strategies. MEMS can degrade due to ionizing radiation (electron-hole pair creation) and non-ionizing radiation (displacement damage), such as electrons, trapped and solar protons, or cosmic rays, typically found in a space environment. Over the past few years there has been several reports on the effects of ionizing radiation in silicon MEMS, with failure generally linked to trapped charge in dielectrics. However there is near complete lack of studies on displacement damage effects in silicon- MEMS: how does silicon change mechanically due to proton irradiation? We report on an investigation on the susceptibility of 50 μm thick SOI-based MEMS resonators to displacement damages due to proton beams, with energies from 1 to 60 MeV, and annealing of this damage. We measure ppm changes on the Young's modulus and Poisson ratio by means of accurately monitoring the resonant frequency of devices in vacuum using a Laser Doppler Vibrometer. We observed for the first time an increase (up to 0.05%) of the Young's modulus of single-crystal silicon electromagnetically-actuated micromirrors after exposure to low energy protons (1-4 MeV) at high absorbed doses ~ 100 Mrad (Si). This investigation will contribute to a better understanding of the susceptibility of silicon-based MEMS to displacement damages frequently encountered in a space radiation environment, and allow appropriated design margin and shielding to be implemented.

  2. Applications of Silicon Carbide for High Temperature Electronics and Sensors

    Science.gov (United States)

    Shields, Virgil B.

    1995-01-01

    Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.

  3. Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

  4. High-resolution patterning of graphene by screen printing with a silicon stencil for highly flexible printed electronics.

    Science.gov (United States)

    Hyun, Woo Jin; Secor, Ethan B; Hersam, Mark C; Frisbie, C Daniel; Francis, Lorraine F

    2015-01-07

    High-resolution screen printing of pristine graphene is introduced for the rapid fabrication of conductive lines on flexible substrates. Well-defined silicon stencils and viscosity-controlled inks facilitate the preparation of high-quality graphene patterns as narrow as 40 μm. This strategy provides an efficient method to produce highly flexible graphene electrodes for printed electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Ultra-high-speed Optical Signal Processing using Silicon Photonics

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

    on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show......— In supercomputers, the optical inter-connects are getting closer and closer to the processing cores. Today, a single supercomputer system has as many optical links as the whole worldwide web together, and it is envisaged that future computing chips will contain multiple electronic processor cores...... with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...

  6. High-flux solar furnace processing of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R.; Landry, M.D.; Menna, P.; Bingham, C.E.; Lewandowski, A.; Ciszek, T.F. [National Renewable Energy Laboratory, Golden, CO (United States)

    1996-06-10

    We used a 10-kW, high-flux solar furnace (HFSF) to diffuse the front-surface n{sup +}-p junction and the back-surface p-p{sup +} junction of single-crystal silicon solar cells in one processing step. We found that all of these HFSF-processed cells have better conversion efficiencies than control cells of identical structures fabricated by conventional furnace diffusion methods. We also used the HFSF to crystallize a-Si:H thin films on glass, to texture crystalline silicon surfaces, to deposit gold contacts on silicon wafers, and to getter impurities from metallurgical grade silicon. HFSF processing offers several advantages over conventional furnace processing: (1) it provides a cold-wall process, which reduces contamination; (2) temperature versus time profiles can be precisely controlled; (3) wavelength, intensity, and spatial distribution of the incident solar flux can be controlled and changed rapidly; (4) a number of high-temperature processing steps can be performed simultaneously; and (5) combined quantum and thermal effects may benefit overall cell performance. We conclude that HFSF processing of silicon solar cells has the potential to improve cell efficiency, reduce cell fabrication costs, and also be an environmentally friendly manufacturing method. We have also demonstrated that the HFSF can be used to achieve solid-phase crystallization of a-Si:H at very high speed

  7. Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots during General Solar Cell Processes

    Institute of Scientific and Technical Information of China (English)

    WU Shan-Shan; WANG Lei; YANG De-Ren

    2011-01-01

    @@ The behavior of wafers and solar cells from the border of a multicrystalline silicon(mc-Si)ingot, which contain deteriorated regions, is investigated.It is found that the diffusion length distribution of minority carriers in the cells is uniform, and high efficiency of the solar cells(about 16%)is achieved.It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions.Moreover, it is indicated that during general solar cell fabrication, phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions, while aluminum gettering by RTP could not.Therefore, it is suggested that the border of a me-Si ingot could be used to fabricate high efficiency solar cells, which will increase me-Si utilization effectively.%The behavior of wafers and solar cells from the border of a multicrystalline silicon (mc-Si) ingot, which contain deteriorated regions, is investigated. It is found that the diffusion length distribution of minority carriers in the cells is uniform, and high efficiency of the solar cells (about 16%) is achieved. It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions. Moreover, it is indicated that during general solar cell fabrication, phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions, while aluminum gettering by RTP could not. Therefore, it is suggested that the border of a mc-Si ingot could be used to fabricate high efficiency solar cells, which will increase mc-Si utilization effectively.

  8. High Density Through Silicon Via (TSV)

    CERN Document Server

    Rimskog, Magnus

    2008-01-01

    The Through Silicon Via (TSV) process developed by Silex provides down to 30 micrometers pitch for through wafer connections in up to 600 micrometers thick substrates. Integrated with MEMS designs it enables significantly reduced die size and true "Wafer Level Packaging" - features that are particularly important in consumer market applications. The TSV technology also enables integration of advanced interconnect functions in optical MEMS, sensors and microfluidic devices. In addition the Via technology opens for very interesting possibilities considering integration with CMOS processing. With several companies using the process already today, qualified volume manufacturing in place and a line-up of potential users, the process is becoming a standard in the MEMS industry. We provide a introduction to the via formation process and also present some on the novel solutions made available by the technology.

  9. High deposition rate nanocrystalline silicon with enhanced homogeneity

    NARCIS (Netherlands)

    Verkerk, A.; Rath, J.K.; Schropp, R.E.I.

    2010-01-01

    High rate growth of hydrogenated nanocrystalline silicon (nc-Si:H) brings additional challenges for the homogeneity in the growth direction, since the start-up effects affect a larger portion of the film, and the very high degree of depletion increases the influence of back diffusion from the inacti

  10. Silicon photonics for high-performance interconnection networks

    Science.gov (United States)

    Biberman, Aleksandr

    2011-12-01

    We assert in the course of this work that silicon photonics has the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems, and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. This work showcases that chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, enable unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of this work, we demonstrate such feasibility of waveguides, modulators, switches, and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. Furthermore, we leverage the unique properties of available silicon photonic materials to create novel silicon photonic devices, subsystems, network topologies, and architectures to enable unprecedented performance of these photonic interconnection networks and computing systems. We show that the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers. Furthermore, we explore the immense potential of all-optical functionalities implemented using parametric processing in the silicon platform, demonstrating unique methods that have the ability to revolutionize computation and communication. Silicon photonics

  11. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    Energy Technology Data Exchange (ETDEWEB)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  12. HIGH FREQUENCY INDUCTION WELDING OF HIGH SILICON STEEL TUBES

    Directory of Open Access Journals (Sweden)

    Ricardo Miranda Alé

    2012-06-01

    Full Text Available High-Si steel is a low cost alternative for the fabrication of tubular structures resistant to atmospheric corrosion. However, the literature has often pointed out that steels presenting a higher Si content and/or a lower Mn/Si ratio have higher susceptibility to defects at the weld bond line during HFIW (High Frequency Induction Welding process, which has been widely used for manufacturing small diameter tubes. In this study the effect of the HFIW conditions on the quality of steel tubes with high-Si content and low Mn/Si ratio is investigated. The quality of welded tubes was determined by flare test and the defects in the bond line were identified by SEM. It has been found that higher welding speeds, V-convergence angles and power input should be applied in welding of high-Si steel, when compared to similar strength C-Mn steel.

  13. High energy density interpenetrating networks from ionic networks and silicone

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Hvilsted, Søren

    2015-01-01

    The energy density of dielectric elastomers (DEs) is sought increased for better exploitation of the DE technology since an increased energy density means that the driving voltage for a certain strain can be lowered in actuation mode or alternatively that more energy can be harvested in generator...... mode. One way to increase the energy density is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permittivity was prepared through the development of interpenetrating networks from ionically assembled silicone polymers and covalently...

  14. Nanocrystalline silicon prepared at high growth rate using helium dilution

    Indian Academy of Sciences (India)

    Koyel Bhattacharya; Debajyoti Das

    2008-06-01

    Growth and optimization of the nanocrystalline silicon (nc-Si : H) films have been studied by varying the electrical power applied to the helium diluted silane plasma in RF glow discharge. Wide optical gap and conducting intrinsic nanocrystalline silicon network of controlled crystalline volume fraction and oriented crystallographic lattice planes have been obtained at a reasonably high growth rate from helium diluted silane plasma, without using hydrogen. Improving crystallinity in the network comprising ∼ 10 nm Si-nanocrystallites and contributing optical gap widening, conductivity ascending and that obtained during simultaneous escalation of the deposition rate, promises significant technological impact.

  15. High-performance fused indium gallium arsenide/silicon photodiode

    Science.gov (United States)

    Kang, Yimin

    Modern long haul, high bit rate fiber-optic communication systems demand photodetectors with high sensitivity. Avalanche photodiodes (APDs) exhibit superior sensitivity performance than other types of photodetectors by virtual of its internal gain mechanism. This dissertation work further advances the APD performance by applying a novel materials integration technique. It is the first successful demonstration of wafer fused InGaAs/Si APDs with low dark current and low noise. APDs generally adopt separate absorption and multiplication (SAM) structure, which allows independent optimization of materials properties in two distinct regions. While the absorption material needs to have high absorption coefficient in the target wavelength range to achieve high quantum efficiency, it is desirable for the multiplication material to have large discrepancy between its electron and hole ionization coefficients to reduce noise. According to these criteria, InGaAs and Si are the ideal materials combination. Wafer fusion is the enabling technique that makes this theoretical ideal an experimental possibility. APDs fabricated on the fused InGaAs/Si wafer with mesa structure exhibit low dark current and low noise. Special device fabrication techniques and high quality wafer fusion reduce dark current to nano ampere level at unity gain, comparable to state-of-the-art commercial III/V APDs. The small excess noise is attributed to the large difference in ionization coefficients between electrons and holes in silicon. Detailed layer structure designs are developed specifically for fused InGaAs/Si APDs based on principles similar to those used in traditional InGaAs/InP APDs. An accurate yet straightforward technique for device structural parameters extraction is also proposed. The extracted results from the fabricated APDs agree with device design parameters. This agreement also confirms that the fusion interface has negligible effect on electric field distributions for devices fabricated

  16. High power terahertz induced carrier multiplication in Silicon

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Pedersen, Pernille Klarskov; Iwaszczuk, Krzysztof;

    2015-01-01

    The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons....

  17. Super soft silicone elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Hvilsted, Søren;

    2015-01-01

    Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young’s modulus and increasing the dielectric permittivity of silicone elasto...

  18. High-field EPR spectroscopy of thermal donors in silicon

    DEFF Research Database (Denmark)

    Dirksen, R.; Rasmussen, F.B.; Gregorkiewicz, T.

    1997-01-01

    Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual...

  19. Liquid phase crystallized silicon on glass: Technology, material quality and back contacted heterojunction solar cells

    Science.gov (United States)

    Haschke, Jan; Amkreutz, Daniel; Rech, Bernd

    2016-04-01

    Liquid phase crystallization has emerged as a novel approach to grow large grained polycrystalline silicon films on glass with high electronic quality. In recent years a lot of effort was conducted by different groups to determine and optimize suitable interlayer materials, enhance the crystallographic quality or to improve post crystallization treatments. In this paper, we give an overview on liquid phase crystallization and describe the necessary process steps and discuss their influence on the absorber properties. Available line sources are compared and different interlayer configurations are presented. Furthermore, we present one-dimensional numerical simulations of a rear junction device, considering silicon absorber thicknesses between 1 and 500 µm. We vary the front surface recombination velocity as well as doping density and minority carrier lifetime in the absorber. The simulations suggest that a higher absorber doping density is beneficial for layer thicknesses below 20 µm or when the minority carrier lifetime is short. Finally, we discuss possible routes for device optimization and propose a hybride cell structure to circumvent current limitations in device design.

  20. Controlling light with high-Q silicon photonic crystal nanocavities: Photon confinement, nonlinearity and coherence

    Science.gov (United States)

    Yang, Xiaodong

    The strong light localization and long photon lifetimes in two-dimensional silicon photonic crystal nanocavities with high quality factor (Q ) and subwavelength modal volume (V) significantly enhance the light-matter interactions, presenting many opportunities to explore new functionalities in silicon nanophotonic integrated circuits for on-chip all-optical information processing, optical computation and optical communications. This thesis will focus on the design, nanofabrication, and experimental characterization of both passive and active silicon nanophotonic devices based on two-dimensional high-Q silicon photonic crystal nanocavities. Three topics of controlling light with these high-Q nanocavities will be presented, including (1) photon confinement mechanism and cavity resonance tuning, (2) enhancement of optical nonlinearities, and (3) all-optical analogue to coherent interferences. The first topic is photon confinement in two-dimensional high- Q silicon photonic crystal nanocavities. In Chapter 2, the role of Q/V as the figure of merit for the enhanced light-matter interaction in optical microcavities and nanocavities is explained and different types of high-Q optical microcavities and nanocavities are reviewed with an emphasis on two-dimensional photonic crystal nanocavities. Then the nanofabrication process and the Q characterization are illustrated for the two-dimensional silicon photonic crystal nanocavities. In Chapter 3, the post-fabrication digital resonance tuning of high-Q silicon photonic crystal nanocavities using atomic layer deposition is proposed and demonstrated, with wide tuning range and precise control of cavity resonances while preserving high quality factors. The second topic is the enhancement of optical nonlinearities in two-dimensional high-Q silicon photonic crystal nanocavities, including stimulated Raman scattering and thermo-optical nonlinearities. In Chapter 4, the enhanced stimulated Raman scattering for low threshold Raman

  1. High Resolution Silicon Deformable Mirrors Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal describes a plan to build a prototype small stroke, high precision deformable mirror suitable for space-based operation in systems for high-resolution...

  2. Silicon-graphene conductive photodetector with ultra-high responsivity

    Science.gov (United States)

    Liu, Jingjing; Yin, Yanlong; Yu, Longhai; Shi, Yaocheng; Liang, Di; Dai, Daoxin

    2017-01-01

    Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~105 A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 107 A/W when operating at −25 °C in our experiment. PMID:28106084

  3. Silicon-graphene conductive photodetector with ultra-high responsivity

    Science.gov (United States)

    Liu, Jingjing; Yin, Yanlong; Yu, Longhai; Shi, Yaocheng; Liang, Di; Dai, Daoxin

    2017-01-01

    Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~105 A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 107 A/W when operating at ‑25 °C in our experiment.

  4. Silicon solar cells with high open-circuit voltage

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.; Kirkpatrick, A. R.; Mccrosky, A.

    1980-01-01

    Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

  5. Plasmonic silicon solar cells: impact of material quality and geometry

    NARCIS (Netherlands)

    Pahud, C.; Isabella, O.; Naqavi, A.; Haug, F.J.; Zeman, M.; Herzig, H.P.; Ballif, C.

    2013-01-01

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We

  6. Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

    OpenAIRE

    2014-01-01

    In electrical devices and integrated circuits, ohmic contacts are necessary and a prerequisite for the current transport over the metal-semiconductor junctions. At the same time, a desired property of the ohmic contacts is to not add resistance or in other way disturb the performance. For high temperature electronics, the material demands are high regarding functionality and stability at elevated working temperatures, during and after temperature cycling and during long time of use.  Silicon ...

  7. Silicon photodiodes with high photoconductive gain at room temperature.

    Science.gov (United States)

    Li, X; Carey, J E; Sickler, J W; Pralle, M U; Palsule, C; Vineis, C J

    2012-02-27

    Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ≈ 100 nA/cm2 at 5 V reverse bias, yielding a detectivity of ≈ 10(14) Jones. These photodiodes are good candidates for applications that require high detection sensitivity and low bias operation.

  8. Development of manufacturing capability for high-concentration, high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sinton, R.A.; Verlinden, P.J.; Crane, R.A.; Swanson, R.N. [SunPower Corp., Sunnyvale, CA (United States)

    1996-10-01

    This report presents a summary of the major results from a program to develop a manufacturable, high-efficiency silicon concentrator solar cell and a cost-effective manufacturing facility. The program was jointly funded by the Electric Power Research Institute, Sandia National Laboratories through the Concentrator Initiative, and SunPower Corporation. The key achievements of the program include the demonstration of 26%-efficient silicon concentrator solar cells with design-point (20 W/cm{sup 2}) efficiencies over 25%. High-performance front-surface passivations; that were developed to achieve this result were verified to be absolutely stable against degradation by 475 days of field exposure at twice the design concentration. SunPower demonstrated pilot production of more than 1500 of these cells. This cell technology was also applied to pilot production to supply 7000 17.7-cm{sup 2} one-sun cells (3500 yielded wafers) that demonstrated exceptional quality control. The average efficiency of 21.3% for these cells approaches the peak efficiency ever demonstrated for a single small laboratory cell within 2% (absolute). Extensive cost models were developed through this program and calibrated by the pilot-production project. The production levels achieved indicate that SunPower could produce 7-10 MW of concentrator cells per year in the current facility based upon the cell performance demonstrated during the program.

  9. High Resolution Silicon Deformable Mirrors Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this proposal we describe a plan to build a deformable mirror suitable for space-based operation in systems for high-resolution imaging. The prototype DM will be...

  10. High-efficiency silicon heterojunction solar cells: Status and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    De Wolf, S.; Geissbuehler, J.; Loper, P.; Martin de Nicholas, S.; Seif, J.; Tomasi, A.; Ballif, C.

    2015-05-11

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical

  11. High-efficiency silicon heterojunction solar cells: Status and perspectives

    Energy Technology Data Exchange (ETDEWEB)

    De Wolf, S.

    2015-04-27

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The

  12. Characterization of highly hydrophobic coatings deposited onto pre-oxidized silicon from water dispersible organosilanes

    Energy Technology Data Exchange (ETDEWEB)

    Almanza-Workman, A. Marcia; Raghavan, Srini; Petrovic, Slobodan; Gogoi, Bishnu; Deymier, Pierre; Monk, David J.; Roop, Ray

    2003-01-01

    The formation and quality of highly hydrophobic coatings deposited from water dispersible organosilanes onto pre-oxidized single crystal silicon were studied using atomic force microscopy, ellipsometry, dynamic contact angle measurements and electrochemical impedance spectroscopy (EIS). Highly hydrophobic films of a commercially available water dispersible silane and two different cationic alkoxysilanes were prepared by dip coating. It was found using atomic force microscopy that, in general, the structure of these highly hydrophobic films is a continuous film with some particulates attributed to bulk polymerization of the precursor molecule in water. Film defects were quantified using EIS by the value of charge transfer resistance at the hydrofluoric acid/silicon interface. Potential applications of this type of coatings include reduction/elimination of stiction in micro-electromechanical systems, contact printing in materials microfabrication, inhibition of corrosion and oxidation, prevention of water wetting, lubrication and protein adsorption.

  13. Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals

    Science.gov (United States)

    Fraj, I.; Favre, L.; David, T.; Abbarchi, M.; Liu, K.; Claude, J. B.; Ronda, A.; Naffouti, M.; Saidi, F.; Hassen, F.; Maaref, H.; Aqua, J. N.; Berbezier, I.

    2017-10-01

    We present the photoluminescence (PL) emission of Silicon and Germanium nanocrystals (NCs) of different sizes embedded in two different matrices. Formation of the NCs is achieved via solid-state dewetting during annealing in a molecular beam epitaxy ultra-high vacuum system of ultrathin amorphous Si and Ge layers deposited at room temperature on SiO2. During the dewetting process, the bi-dimensional amorphous layers transform into small pseudo-spherical islands whose mean size can be tuned directly with the deposited thickness. The nanocrystals are capped either ex situ by silicon dioxide or in situ by amorphous Silicon. The surface-state dependent emission (typically in the range 1.74 eV-1.79 eV) exhibited higher relative PL quantum yields compared to the emission originating from the band gap transition. This red-PL emission comes from the radiative transitions between a Si band and an interface level. It is mainly ascribed to the NCs and environment features deduced from morphological and structural analyses. Power dependent analysis of the photoluminescence intensity under continuous excitation reveals a conventional power law with an exponent close to 1, in agreement with the type II nature of the emission. We show that Ge-NCs exhibit much lower quantum efficiency than Si-NCs due to non-radiative interface states. Low quantum efficiency is also obtained when NCs have been exposed to air before capping, even if the exposure time is very short. Our results indicate that a reduction of the non-radiative surface states is a key strategy step in producing small NCs with increased PL emission for a variety of applications. The red-PL band is then an effective tool for the quality assessment of NCs based structures.

  14. High Performance Electronics on Flexible Silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-09-01

    Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and health monitoring systems that cannot be integrated with conventional wafer based complementary metal oxide semiconductor processes. Most of the current efforts to create flexible high performance devices are based on the use of organic semiconductors. However, inherent material\\'s limitations make them unsuitable for big data processing and high speed communications. The objective of my doctoral dissertation is to develop integration processes that allow the transformation of rigid high performance electronics into flexible ones while maintaining their performance and cost. In this work, two different techniques to transform inorganic complementary metal-oxide-semiconductor electronics into flexible ones have been developed using industry compatible processes. Furthermore, these techniques were used to realize flexible discrete devices and circuits which include metal-oxide-semiconductor field-effect-transistors, the first demonstration of flexible Fin-field-effect-transistors, and metal-oxide-semiconductors-based circuits. Finally, this thesis presents a new technique to package, integrate, and interconnect flexible high performance electronics using low cost additive manufacturing techniques such as 3D printing and inkjet printing. This thesis contains in depth studies on electrical, mechanical, and thermal properties of the fabricated devices.

  15. Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

    KAUST Repository

    Yang, Xinbo

    2017-05-31

    Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.

  16. Development of high-thermal-conductivity silicon nitride ceramics

    Directory of Open Access Journals (Sweden)

    You Zhou

    2015-09-01

    Full Text Available Silicon nitride (Si3N4 with high thermal conductivity has emerged as one of the most promising substrate materials for the next-generation power devices. This paper gives an overview on recent developments in preparing high-thermal-conductivity Si3N4 by a sintering of reaction-bonded silicon nitride (SRBSN method. Due to the reduction of lattice oxygen content, the SRBSN ceramics could attain substantially higher thermal conductivities than the Si3N4 ceramics prepared by the conventional gas-pressure sintering of silicon nitride (SSN method. Thermal conductivity could further be improved through increasing the β/α phase ratio during nitridation and enhancing grain growth during post-sintering. Studies on fracture resistance behaviors of the SRBSN ceramics revealed that they possessed high fracture toughness and exhibited obvious R-curve behaviors. Using the SRBSN method, a Si3N4 with a record-high thermal conductivity of 177 Wm−1K−1 and a fracture toughness of 11.2 MPa m1/2 was developed. Studies on the influences of two typical metallic impurity elements, Fe and Al, on thermal conductivities of the SRBSN ceramics revealed that the tolerable content limits for the two impurities were different. While 1 wt% of impurity Fe hardly degraded thermal conductivity, only 0.01 wt% of Al caused large decrease in thermal conductivity.

  17. High-power thulium lasers on a silicon photonics platform.

    Science.gov (United States)

    Li, Nanxi; Purnawirman, P; Su, Zhan; Salih Magden, E; Callahan, Patrick T; Shtyrkova, Katia; Xin, Ming; Ruocco, Alfonso; Baiocco, Christopher; Ippen, Erich P; Kärtner, Franz X; Bradley, Jonathan D B; Vermeulen, Diedrik; Watts, Michael R

    2017-03-15

    Mid-infrared laser sources are of great interest for various applications, including light detection and ranging, spectroscopy, communication, trace-gas detection, and medical sensing. Silicon photonics is a promising platform that enables these applications to be integrated on a single chip with low cost and compact size. Silicon-based high-power lasers have been demonstrated at 1.55 μm wavelength, while in the 2 μm region, to the best of our knowledge, high-power, high-efficiency, and monolithic light sources have been minimally investigated. In this Letter, we report on high-power CMOS-compatible thulium-doped distributed feedback and distributed Bragg reflector lasers with single-mode output powers up to 267 and 387 mW, and slope efficiencies of 14% and 23%, respectively. More than 70 dB side-mode suppression ratio is achieved for both lasers. This work extends the applicability of silicon photonic microsystems in the 2 μm region.

  18. Silicon Sensors for Trackers at High-Luminosity Environment

    CERN Document Server

    Peltola, Timo

    2015-01-01

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than the one of LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge ...

  19. High-power thermoelectric generators based on nanostructured silicon

    Science.gov (United States)

    Pennelli, G.; Macucci, M.

    2016-05-01

    The low thermal conductivity of silicon nanowires and nanostructures opens interesting opportunities for energy harvesting through the direct, high-efficiency, conversion of waste heat into electrical power. We present solutions for the fabrication and interconnection of a high number of suspended silicon nanostructures, within CMOS compatible top-down processes. Mechanical stability and thermoelectric properties of these devices will be analysed by means of finite element simulations, and opportunities for practical applications will be discussed. It will be shown that, despite the reduced dimensions needed for a strong suppression of thermal conductivity, a considerable amount of electrical power can be delivered to the load as a result of the presence of many interconnected devices on the same chip.

  20. Crystalline silicon solar cells with high resistivity emitter

    Science.gov (United States)

    Panek, P.; Drabczyk, K.; Zięba, P.

    2009-06-01

    The paper presents a part of research targeted at the modification of crystalline silicon solar cell production using screen-printing technology. The proposed process is based on diffusion from POCl3 resulting in emitter with a sheet resistance on the level of 70 Ω/□ and then, shaped by high temperature passivation treatment. The study was focused on a shallow emitter of high resistivity and on its influence on output electrical parameters of a solar cell. Secondary ion mass spectrometry (SIMS) has been employed for appropriate distinguishing the total donor doped profile. The solar cell parameters were characterized by current-voltage characteristics and spectral response (SR) methods. Some aspects playing a role in suitable manufacturing process were discussed. The situation in a photovoltaic industry with emphasis on silicon supply and current prices of solar cells, modules and photovoltaic (PV) systems are described. The economic and quantitative estimation of the PV world market is shortly discussed.

  1. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  2. In-line high-rate evaporation of aluminum for the metallization of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mader, Christoph Paul

    2012-07-11

    -line high-rate evaporation of aluminum without any further temperature treatment is presented. Contact saturation current densities of full-area and of local Al-p{sup +} regions are shown to be in the same range as published data of unpassivated screen-printed Al-p{sup +} regions. The results of this work prove the high quality of rear contacts to silicon solar cells that are formed by in-line high-rate evaporation of aluminum and that evaporation is a competitive alternative to the screen-printing technology.

  3. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Science.gov (United States)

    Léal, Ronan; Haddad, Farah; Poulain, Gilles; Maurice, Jean-Luc; Roca i Cabarrocas, Pere

    2017-02-01

    Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD) from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS) and secondary ion mass spectrometry (SIMS) measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3). Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV) revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  4. High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Ronan Léal

    2017-02-01

    Full Text Available Controlling the doping profile in solar cells emitter and front/back surface field is mandatory to reach high efficiencies. In the current state of the art, these doped layers are made by dopant diffusion at around 900°C, which implies potential temperature induced damages in the c-Si absorber and for which a precise control of doping is difficult. An alternative solution based on boron-doped epitaxial silicon layers grown by plasma-enhanced chemical vapor deposition (PECVD from 200°C using SiF4/H2/Ar/B2H6 chemistry is reported. The structural properties of the doped and undoped epitaxial layers were assessed by spectroscopic ellipsometry (SE, high resolution transmission electron microscopy (HR-TEM and X-ray diffraction (XRD. The incorporation of boron has been studied via plasma profiling time of flight mass spectrometry (PP-TOFMS and secondary ion mass spectrometry (SIMS measurements. The boron-doped epitaxial layers revealed excellent structural and electrical properties even for high carrier concentrations (>1019cm-3. Sheet resistances between 100 and 130 Ω/sq can been obtained depending on the thickness and the doping concentration, which is within the range of targeted values for emitters in c-Si solar cells. Electrochemical capacitance voltage (ECV revealed a uniform doping profile around 3.1019 cm-3 and by comparing with SIMS measurement a doping efficiency around 50% has been found.

  5. Refinement of Eutectic Silicon Phase of Aluminum A356 Alloy Using High-Intensity Ultrasonic Vibration

    Energy Technology Data Exchange (ETDEWEB)

    Jian, Xiaogang [ORNL; Han, Qingyou [ORNL

    2006-01-01

    The eutectic silicon in A356 alloy can be refined and modified using either chemical, quench, or superheating modification. We observed, for the first time, that the eutectic silicon can also be significantly refined using high-intensity ultrasonic vibration. Rosette-like eutectic silicon is formed during solidification of specimen treated with high-intensity ultrasonic vibration.

  6. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... Imprinting Lithography (UV-NIL); b) growth of crack-free silicon absorber layers on highly textured substrates; c) development of new TCOs which should combine the best properties of presently available materials like ITO and AZO. The paper presents the midterm status of the project results, showing model...

  7. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

    Science.gov (United States)

    Hazbun, Ramsey; Hart, John; Hickey, Ryan; Ghosh, Ayana; Fernando, Nalin; Zollner, Stefan; Adam, Thomas N.; Kolodzey, James

    2016-06-01

    The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

  8. Mesoporous Silicon-Based Anodes for High Capacity, High Performance Li-ion Batteries Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, the active...

  9. Mesoporous Silicon-Based Anodes for High Capacity, High Performance Li-ion Batteries Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, the active anode...

  10. Valley-engineered ultra-thin silicon for high-performance junctionless transistors

    Science.gov (United States)

    Kim, Seung-Yoon; Choi, Sung-Yool; Hwang, Wan Sik; Cho, Byung Jin

    2016-07-01

    Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from ultra-thin-body silicon are the two main mechanisms for valley engineering. These were obtained from the extremely well-controlled silicon surface roughness and high tensile strain in silicon, thereupon demonstrating a device mobility increase of ~500% in a 2.5 nm thick silicon channel device.

  11. A two dimensional silicon detectors array for quality assurance in stereotactic radiotherapy: MagicPlate-512

    Energy Technology Data Exchange (ETDEWEB)

    Aldosari, A. H.; Petasecca, M., E-mail: marcop@uow.edu.au; Espinoza, A.; Newall, M.; Fuduli, I.; Porumb, C.; Alshaikh, S.; Alrowaili, Z. A.; Weaver, M.; Metcalfe, P.; Lerch, M. L. F.; Rosenfeld, A. B. [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2500 (Australia); Carolan, M. [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2500, Australia and Illawarra Cancer Care Centre, Wollongong Hospital, Wollongong, NSW 2500 (Australia); Perevertaylo, V. [SPA-BIT, KIEV 02232 (Ukraine)

    2014-09-15

    Purpose: Silicon diode arrays are commonly implemented in radiation therapy quality assurance applications as they have a number of advantages including: real time operation (compared to the film) and high spatial resolution, large dynamic range and small size (compared to ionizing chambers). Most diode arrays have detector pitch that is too coarse for routine use in small field applications. The goal of this work is to characterize the two-dimensional monolithic silicon diode array named “MagicPlate-512” (MP512) designed for QA in stereotactic body radiation therapy (SBRT) and stereotactic radio surgery (SRS). Methods: MP512 is a silicon monolithic detector manufactured on ap-type substrate. An array contains of 512 pixels with size 0.5 × 0.5 mm{sup 2} and pitch 2 mm with an overall dimension of 52 × 52 mm{sup 2}. The MP512 monolithic detector is wire bonded on a printed circuit board 0.5 mm thick and covered by a thin layer of raisin to preserve the silicon detector from moisture and chemical contamination and to protect the bonding wires. Characterization of the silicon monolithic diode array response was performed, and included pixels response uniformity, dose linearity, percent depth dose, output factor, and beam profiling for beam sizes relevant to SBRT and SRS and depth dose response in comparison with ionization chamber. Results: MP512 shows a good dose linearity (R{sup 2} = 0.998) and repeatability within 0.2%. The measured depth dose response for field size of 10 × 10 cm{sup 2} agreed to within 1.3%, when compared to a CC13 ionization chamber for depths in PMMA up to 30 cm. The output factor of a 6 MV Varian 2100EX medical linac beam measured by MP512 at the isocenter agrees to within 2% when compared to PTW diamond, Scanditronix point EDD-2 diode and MOSkin detectors for field sizes down to 1 × 1 cm{sup 2}. An over response of 4% was observed for square beam size smaller than 1 cm when compared to EBT3 films, while the beam profiles (FWHM) of MP

  12. High aspect ratio channels in glass and porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liang, H.D. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Dang, Z.Y. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Wu, J.F. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Kan, J.A. van; Qureshi, S. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Ynsa, M.D.; Torres-Costa, V. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Centro de Micro-Análisis de Materiales (CMAM), Universidad Autónoma de Madrid, Campus de Cantoblanco Edif. 22, Faraday 3, E-28049 Madrid (Spain); Maira, A. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Venkatesan, T.V. [Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Breese, M.B.H., E-mail: phymbhb@nus.edu.sg [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

    2017-03-01

    We have developed a micromachining process to produce high-aspect-ratio channels and holes in glass and porous silicon. Our process utilizes MeV proton beam irradiation of silicon using direct writing with a focused beam, followed by electrochemical etching. To increase throughput we have also developed another process for large area ion irradiation based on a radiation-resistant gold surface mask, allowing many square inches to be patterned. We present a study of the achievable channel width, depth and period and sidewall verticality for a range of channels which can be over 100 μm deep or 100 nm wide with aspect ratios up to 80. This process overcomes the difficulty of machining glass on a micro- and nanometer scale which has limited many areas of applications in different fields such as microelectronics and microfluidics.

  13. The lattice parameter of highly pure silicon single crystals

    Science.gov (United States)

    Becker, P.; Scyfried, P.; Siegert, H.

    1982-08-01

    From crystal to crystal comparison, the d 220 lattice spacing in PERFX and WASO silicon crystals used in the only two existing absolute measurements have been found to be equal within ±2×10-7 d 220. This demonstrates that generic variabilities of the two crystals account only for a small part of the 1.8×10-6 d 220 difference in the two absolute measurements. In a new series of 336 single measurements, our d 220 value reported recently has been confirmed within ±2×10-8 d 220. From these results we derive the following lattice parameter for highly pure silicon single crystals: a 0=(543 102.018±0.034) fm (at 22.5°C, in vacuum).

  14. Silicon Photomultipliers in High Energy and Space Applications

    CERN Document Server

    Berra, Alessandro; Vallazza, Erik

    In recent years Silicon Photomultipliers (SiPMs) have been proposed as a new type of readout system for scintillating detectors in many experiments. SiPMs consist of a matrix of parallel-connected silicon micro-pixels, which are independent photon counters working in limited Geiger mode with very high gain. The goal of this thesis work is to describe the use of SiPMs as a readout system for plastic scintillators, both for tracking and calorimetry purposes. Different prototypes of scintillating bar tracker and shashlik calorimeters have been tested at CERN on the PS and SPS extracted beamlines. All the tests have been performed in the framework of the FACTOR (Fiber Apparatus for Calorimetry and Tracking with Optoelectronic Read-out) collaboration, a three year R&D project started in 2007 and funded by the Italian Institute of Nuclear Physics (INFN).

  15. High aspect ratio channels in glass and porous silicon

    Science.gov (United States)

    Liang, H. D.; Dang, Z. Y.; Wu, J. F.; van Kan, J. A.; Qureshi, S.; Ynsa, M. D.; Torres-Costa, V.; Maira, A.; Venkatesan, T. V.; Breese, M. B. H.

    2017-03-01

    We have developed a micromachining process to produce high-aspect-ratio channels and holes in glass and porous silicon. Our process utilizes MeV proton beam irradiation of silicon using direct writing with a focused beam, followed by electrochemical etching. To increase throughput we have also developed another process for large area ion irradiation based on a radiation-resistant gold surface mask, allowing many square inches to be patterned. We present a study of the achievable channel width, depth and period and sidewall verticality for a range of channels which can be over 100 μm deep or 100 nm wide with aspect ratios up to 80. This process overcomes the difficulty of machining glass on a micro- and nanometer scale which has limited many areas of applications in different fields such as microelectronics and microfluidics.

  16. Characterization of high density through silicon vias with spectral reflectometry.

    Science.gov (United States)

    Ku, Yi-Sha; Huang, Kuo Cheng; Hsu, Weite

    2011-03-28

    Measurement and control is an important step for production-worthy through silicon vias etch. We demonstrate the use and enhancement of an existing wafer metrology tool, spectral reflectometer by implementing novel theoretical model and measurement algorithm for high density through-silicon via (HDTSV) inspection. It is capable of measuring depth and depth variations of array vias by Discrete Fourier Transform (DFT) analysis in one shot measurement. Surface roughness of via bottom can also be extracted by scattering model fitting. Our non-destructive solution can measure TSV profile diameters as small as 5 μm and aspect ratios greater than 13:1. The measurement precision is in the range of 0.02 μm. Metrology results from actual 3D interconnect processing wafers are presented.

  17. High thermal conductivity of a hydrogenated amorphous silicon film.

    Science.gov (United States)

    Liu, Xiao; Feldman, J L; Cahill, D G; Crandall, R S; Bernstein, N; Photiadis, D M; Mehl, M J; Papaconstantopoulos, D A

    2009-01-23

    We measured the thermal conductivity kappa of an 80 microm thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3omega (80-300 K) and the time-domain thermo-reflectance (300 K) methods. The kappa is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theory using a tight-binding method on three 1000 atom continuous random network models. The theory gives higher kappa for more ordered models, but not high enough to explain our results, even after extrapolating to lower frequencies with a Boltzmann approach. Our results show that this material is more ordered than any amorphous silicon previously studied.

  18. High current gain silicon-based spin transistor

    CERN Document Server

    Dennis, C L; Ensell, G J; Gregg, J F; Thompson, S M

    2003-01-01

    A silicon-based spin transistor of novel operating principle has been demonstrated in which the current gain at room temperature is 1.4 (n-type) and 0.97 (p-type). This high current gain was obtained from a hybrid metal/semiconductor analogue to the bipolar junction transistor which functions by tunnel-injecting carriers from a ferromagnetic emitter into a diffusion driven silicon base and then tunnel-collecting them via a ferromagnetic collector. The switching of the magnetic state of the collector ferromagnet controls the collector efficiency and the current gain. Furthermore, the magnetocurrent, which is determined to be 98% (140%) for p-type (n-type) in -110 Oe, is attributable to the spin-polarized base diffusion current.

  19. Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing Gao

    2015-09-01

    Full Text Available To grow high-quality and large-size monocrystal-line silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.

  20. Particle detectors made of high-resistivity Czochralski silicon

    CERN Document Server

    Härkönen, J; Ivanov, A; Li, Z; Luukka, Panja; Pirojenko, A; Riihimaki, I; Tuominen, E; Tuovinen, E; Verbitskaya, E; Virtanen, A

    2005-01-01

    We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 Omega cm and 1.9 kOmega cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, gamma-rays, lithium ions and electrons. Cz-Si was found to be more radiation hard than standard Float Zone silicon (Fz-Si) or oxygenated Fz-Si. When irradiated with protons, the full depletion voltage in Cz-Si has not exceeded its initial value of 300 V even after the fluence of 5 multiplied by 10**1**4 cm**-**2 1-MeV eq. n cm **-**2 that equals more than 30 years operation of...

  1. High frequency guided wave propagation in monocrystalline silicon wafers

    Science.gov (United States)

    Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

    2017-04-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

  2. Silicon sensors for trackers at high-luminosity environment

    Science.gov (United States)

    Peltola, Timo

    2015-10-01

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented.

  3. Pulsed Nd:YAG laser cladding of high silicon content coating on low silicon steel

    Institute of Scientific and Technical Information of China (English)

    Danyang Dong; Changsheng Liu; Bin Zhang; Jun Miao

    2007-01-01

    A pulsed Nd:YAG (yttrium aluminum garnet) laser-based technique was employed to clad low silicon steel with preplaced Si and Fe mixed powders for high Si content. The surface morphology, microstructural evolution, phase composition, and Si distribution,within the obtained cladding coatings, were characterized by optical microscopy (OM), field emission scanning electron microscopy (FE-SEM), with associated energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The microhardness was also measured along the depth direction of the specimens. A crack- and pore-free cladding coating through excellent metallurgical bonding with the substrate was successfully prepared on low silicon steel by means of optimized single-track and multi-track laser cladding. The phases of the coating are α-Fe, γ-Fe, and FeSi. The high microhardness of the lasercladding zone is considered as an increase in Si content and as the refined microstructure produced by the laser treatment. The Si contents of the cladding coatings were about 5.8wt% in the single-track cladding and 6.5wt% in the multi-track cladding, respectively.

  4. Silicon production using long flaming coal and improvement of its quality indicators

    Directory of Open Access Journals (Sweden)

    A. D. Mekhtiev

    2014-10-01

    Full Text Available The object of this study is to explore possibility of metallothermic producing of crystalline silicon using various types of carbon reducing agents as a reducing agent. The experience of existing enterprises shows that one of the best carbon reducing agents qualifying silicon electric melting technology is charcoal. On the other hand, charcoal has a number of disadvantages, such as its scarcity, high cost and low mechanical strength. Experimental melts has shown the principal possibility of producing the crystalline silicon that meets the requirements of quartz standard using low ash special coke and long-flame coal as reducing agents.

  5. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

  6. Silicon Carbide Diodes Performance Characterization at High Temperatures

    Science.gov (United States)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

    2004-01-01

    NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

  7. Brain inspired high performance electronics on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2014-06-01

    Brain\\'s stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components [1], they can perform 1016 operations per second while consuming less power than an electrical light bulb. In order to perform the same amount of computation with today\\'s most advanced computers, the output of an entire power station would be needed. In that sense, to obtain brain like computation, ultra-fast devices with ultra-low power consumption will have to be integrated in extremely reduced areas, achievable only if brain folded structure is mimicked. Therefore, to allow brain-inspired computation, flexible and transparent platform will be needed to achieve foldable structures and their integration on asymmetric surfaces. In this work, we show a new method to fabricate 3D and planar FET architectures in flexible and semitransparent silicon fabric without comprising performance and maintaining cost/yield advantage offered by silicon-based electronics.

  8. Diamond and silicon pixel detectors in high radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Tsung, Jieh-Wen

    2012-10-15

    Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

  9. Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators.

    Science.gov (United States)

    Lin, Hongtao; Li, Lan; Zou, Yi; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kozacik, Stephen; Murakowski, Maciej; Prather, Dennis; Lin, Pao T; Singh, Vivek; Agarwal, Anu; Kimerling, Lionel C; Hu, Juejun

    2013-05-01

    We demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The resonators exhibited a high intrinsic quality factor of 2×10(5) at 5.2 μm wavelength, which is among the highest values reported in on-chip mid-infrared (mid-IR) photonic devices. The resonator can serve as a key building block for mid-IR planar photonic circuits.

  10. High-temperature CVD for crystalline-silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Faller, F.R.; Hurrle, A.

    1999-10-01

    The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that the authors have constructed and characterized. The system fulfills basic requirements to be met for solar cell application; solar cells made from epitaxial layers on various substrates were fabricated. The high-quality cells achieved 17.6% efficiency proving the excellent performance of the system, the cells on economically relevant substrates achieved 8% efficiency which still needs improvement.

  11. Influence of calcium and silicon supplementation into Pleurotus ostreatus substrates on quality of fresh and canned mushrooms.

    Science.gov (United States)

    Thongsook, T; Kongbangkerd, T

    2011-08-01

    Supplements of gypsum (calcium source), pumice (silicon source) and pumice sulfate (silicon and calcium source) into substrates for oyster mushrooms (Pleurotus ostreatus) were searched for their effects on production as well as qualities of fresh and canned mushrooms. The addition of pumice up to 30% had no effect on total yield, size distribution and cap diameters. The supplementation of gypsum at 10% decreased the total yield; and although gypsum at 5% did not affect total yield, the treatment increased the proportion of large-sized caps. High content (>10%) of pumice sulfate resulted in the lower yield. Calcium and silicon contents in the fruit bodies were not influenced by supplementations. The centrifugal drip loss values and solid content of fresh mushrooms, and the percentage of weight gained and firmness of canned mushrooms, cultivated in substrates supplemented with gypsum, pumice and pumice sulfate were significantly (p≤0.05) higher than those of the control. Scanning electron micrographs revealed the more compacted hyphae of mushroom stalks supplemented with silicon and/or calcium after heat treatment, compared to the control. Supplementation of P. ostreatus substrates with 20% pumice was the most practical treatment because it showed no effect on yield and the most cost-effective.

  12. Feeding of liquid silicon for high performance multicrystalline silicon with increased ingot height and homogenized resistivity

    Science.gov (United States)

    Krenckel, Patricia; Riepe, Stephan; Schindler, Florian; Strauch, Theresa

    2017-04-01

    Feeding of liquid silicon during the directional solidification process is a promising opportunity for cost reduction by increased throughput and improved material homogeneity due to constant resistivity over ingot height. In this work, a liquid feeding apparatus was developed for an industrial type directional solidification furnace. One n-type G2 sized High Performance multicrystalline ingot with liquid feeding of additional 14 kg of undoped silicon feedstock was crystallized. The resistivity was kept within a range of ±0.1 Ω cm of the target resistivity during the feeding sequence. A smaller mean grain area growth was observed during feeding, whereas the area fraction of recombination active dislocation structures was as low as in a reference ingot. Increased interstitial oxygen and substitutional carbon concentrations were measured for the ingot with liquid feeding. The measured mean bulk lifetime of 190 μs for passivated wafers in the feeding sequence can probably be increased by further pre-melting crucible improvements. For this laboratory experiment, energy reductions of 2% per wafer and time savings of 16% per wafer were realized.

  13. Mechanisms of high-regularity periodic structuring of silicon surface by sub-MHz repetition rate ultrashort laser pulses

    Science.gov (United States)

    Gnilitskyi, Iaroslav; Gruzdev, Vitaly; Bulgakova, Nadezhda M.; Mocek, Tomáš; Orazi, Leonardo

    2016-10-01

    Silicon is one of the most abundant materials which is used in many areas of modern research and technology. A variety of those applications require surface nanopatterning with minimum structure defects. However, the high-quality nanostructuring of large areas of silicon surface at industrially acceptable speed is still a challenge. Here, we report a rapid formation of highly regular laser-induced periodic surface structures (HR-LIPSS) in the regime of strong ablation by infrared femtosecond laser pulses at sub-MHz repetition rate. Parameters of the laser-surface interactions and obtained experimental results suggest an important role of electrostatically assisted bond softening in initiating the HR-LIPSS formation.

  14. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    Science.gov (United States)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  15. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  16. Silicon sensors for trackers at high-luminosity environment

    Energy Technology Data Exchange (ETDEWEB)

    Peltola, Timo, E-mail: timo.peltola@helsinki.fi

    2015-10-01

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

  17. High Voltage Operation of heavily irradiated silicon microstrip detectors

    CERN Document Server

    Gu, W H; Angarano, M M; Bader, A; Biggeri, U; Boemi, D; Braibant, S; Breuker, H; Bruzzi, Mara; Caner, A; Catacchini, E; Civinini, C; Creanza, D; D'Alessandro, R; Demaria, N; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; Fürtjes, A; Glessing, B; Hall, G; Hammerstrom, R; Dollan, Ralph; Huhtinen, M; Karimäki, V; König, S; Lenzi, M; Lübelsmeyer, K; Maggi, G; Mannelli, M; Marchioro, A; Mariotti, C; Mättig, P; McEvoy, B; Meschini, M; My, S; Pandoulas, D; Parrini, G; Pieri, M; Dollan, Ralph; Potenza, R; Raso, G; Raymond, M; Schmitt, B; Selvaggi, G; Siedling, R; Silvestris, L; Skog, K; Stefanini, G; Tempesta, P; Tricomi, A; Watts, S; Wittmer, B; De Palma, M

    1999-01-01

    We discuss the results obtained from the R&D studies, done within the CMS experiment at LHC related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages before and after heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturesrs that are able to work at V_bias > 500 Volts before and after the irradiation procedure, maintaining an acceptable performance with S/N > 14, efficiency close to 100% and few ghost hits.

  18. High efficiency interdigitated back contact silicon solar cells

    Science.gov (United States)

    Verlinden, P.; van de Wiele, F.; Stehelin, G.; Floret, F.; David, J. P.

    Interdigitated back contact (IBC) silicon solar cells with 25.6 percent efficiency at 10 W/sq cm and 24.4 percent at 30 W/ sq cm were fabricated. The authors report on the technological process, which produces a high effective carrier lifetime in the bulk (780 microsec), and on the characterization of the cells. The front side of these cells is textured and has an efficient polka-dot floating tandem junction. IBC and point-contact (PC) cells are fabricated on the same substrate and their efficiencies are compared. The possiblity of reaching 29 percent efficiency at 300X is shown.

  19. Electrical properties of deuteron irradiated high resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Insitute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [H. Niewodniczański Institute of Nuclear Physics Polish Academy of Science, Cracow (Poland); Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Avdeyev, Sergej P. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł; Kozłowski, Roman [Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw (Poland)

    2014-04-01

    We have investigated resistivity changes introduced on the high-resistivity p-type silicon wafer by the irradiation with deuteron beam with an energy of 4.4 GeV performed in the NUCLOTRON superconducting accelerator. Two contactless techniques were used for the measurements of resistivity changes: namely the microwave split post dielectric resonator (SPDR) technique and capacitance measurements in the frequency domain. The first technique allows resistivity measurements in the plane of the wafer, while the second one in the direction perpendicular to the wafer. The resistivity map obtained with the SPDR technique enabled us to obtain a permanent fingerprint of the accelerator beam intensity profile. It has been shown that after the irradiation, the material resistivity increased to ∼3.9 × 10{sup 5} Ω cm in the wafer region exposed to the maximum beam intensity. Complementary studies of the properties and concentrations of radiation deep-level defects were performed by the high-resolution photo-induced current transient spectroscopy (HRPITS). These studies have shown that the irradiation of the high resistivity silicon with 4.4-GeV deuterons results in the formation of several types of deep-level defects responsible for the charge compensation.

  20. Sensitivity analysis of high-efficiency silicon solar-cell design parameters

    Science.gov (United States)

    Mokashi, A. R.

    1984-01-01

    Silicon solar cell design parameters were investigated to determine their bearing on cell efficiency. Among the parameters reviewed were: (1) bulk resistivity, (2) minority carrier lifetime cell thickness, (3) front junction depth, (4) front surface doping concentration, (5) front surface recombination velocity, and (6) back surface contact. The following were concluded: (1) there is good agreement between experimental and simulation results; (2) sheet material quality improvement is needed for high efficiency cells; (3) 20% cell of this design is feasible with 10 ms bulk lifetime material; and (4) for achieving efficiencies higher than 20% new cell designs including thin cells with light trapping and back surface field should be considered.

  1. Highly sensitive and reproducible silicon-based surface-enhanced Raman scattering sensors for real applications.

    Science.gov (United States)

    Wang, Houyu; Jiang, Xiangxu; He, Yao

    2016-08-15

    During the past few decades, thanks to silicon nanomaterials' outstanding electronic/optical/mechanical properties, large surface-to-volume ratio, abundant surface chemistry, facile tailorability and good compatibility with modern semiconductor industry, different dimensional silicon nanostructures have been widely employed for rationally designing and fabricating high-performance surface-enhanced Raman scattering (SERS) sensors for the detection of various chemical and biological species. Among these, two-dimensional silicon nanostructures made of metal nanoparticle-modified silicon wafers and three-dimensional silicon nanostructures made of metal nanoparticle-decorated SiNW arrays are of particular interest, and have been extensively exploited as promising silicon-based SERS-active substrates for the construction of high-performance SERS sensors. With an aim to retrospect these important and exciting achievements, we herein focus on reviewing recent representative studies on silicon-based SERS sensors for sensing applications from a broad perspective and possible future direction, promoting readers' awareness of these novel powerful silicon-based SERS sensing technologies. Firstly, we summarize the two unique merits of silicon-based SERS sensors, and those are high sensitivity and good reproducibility. Next, we present recent advances of two- and three-dimensional silicon-based SERS sensors, especially for real applications. Finally, we discuss the major challenges and prospects for the development of silicon-based SERS sensors.

  2. Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics

    Science.gov (United States)

    Kanechika, Masakazu; Mitsushima, Yasuichi

    2000-12-01

    A new process to fabricate a silicon needle, whose tip radius is about 5 nm and aspect ratio is about 7, was developed. The silicon needles were fabricated by highly selective anisotropic dry etching. The etching mask was oxygen precipitation, which was formed by nitrogen ion implantation and the subsequent oxidation. The process is simple enough to be integrated with complementary metal-oxide-semiconductor (CMOS) circuits. The density of the silicon needle can be controlled by adjusting the dose for nitrogen ion implantation. The position of the silicon needle can be controlled by adjusting the position for nitrogen ion implantation, because silicon needles are formed only in the nitrogen ion implantation area. Furthermore, using these silicon needles as micro emitters, a field emission diode was fabricated. The Fowler-Nordheim plot shows that the field around the tip of the silicon needles was highly enhanced.

  3. Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces

    Science.gov (United States)

    Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R.

    2014-09-09

    A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).

  4. Cavity cooling of free silicon nanoparticles in high vacuum.

    Science.gov (United States)

    Asenbaum, Peter; Kuhn, Stefan; Nimmrichter, Stefan; Sezer, Ugur; Arndt, Markus

    2013-01-01

    Laser cooling has given a boost to atomic physics throughout the last 30 years, as it allows one to prepare atoms in motional states, which can only be described by quantum mechanics. Most methods rely, however, on a near-resonant and cyclic coupling between laser light and well-defined internal states, which has remained a challenge for mesoscopic particles. An external cavity may compensate for the lack of internal cycling transitions in dielectric objects and it may provide assistance in the cooling of their centre-of-mass state. Here we demonstrate cavity cooling of the transverse kinetic energy of silicon nanoparticles freely propagating in high vacuum (<10(-8) mbar). We create and launch them with longitudinal velocities down to v≤1 m s(-1) using laser-induced ablation of a pristine silicon wafer. Their interaction with the light of a high-finesse infrared cavity reduces their transverse kinetic energy by up to a factor of 30.

  5. High-flux solar furnace processing of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R.; Landry, M.D.; Bingham, C.E.; Lewandowski, A.; Ciszek, T.F. [National Renewable Energy Lab., Golden, CO (United States)

    1994-12-31

    The authors used a 10-kW high-flux solar furnace (HFSF) to diffuse the front-surface n{sup +}-p junction and the back-surface p-p{sup +} junction of single-crystal silicon solar cells in one processing step. They found that all of the HFSF-processed cells have better conversion efficiencies than control cells of identical structures fabricated by conventional furnace diffusion methods. HFSF processing offers several advantages that may contribute to improved solar cell efficiency: (1) it provides a cold-wall process, which reduces contamination; (2) temperature versus time profiles can be precisely controlled; (3) wavelength, intensity, and spatial distribution of the incident solar flux can be controlled and changed rapidly; (4) a number of high-temperature processing steps can be performed simultaneously; and (5) combined quantum and thermal effects may benefit overall cell performance. The HFSF has also been successfully used to texture the surface of silicon wafers and to crystallize a-Si:H thin films on glass.

  6. Silicon-carbon interactions in high latitude watersheds

    Science.gov (United States)

    Humborg, C.; Morth, C.; Struyf, E.; Conley, D. J.

    2008-12-01

    Changes in climate and hydrology in high latitude regions could liberate large amounts of previously inactive organic carbon (OC) during a prolonging thawing period, and new studies have shown that a great deal of this organic C is remineralized as CO2 during its transport to the sea. However, OC (with its origin in atmospheric carbon) and dissolved silicate (DSi) concentrations in taiga and tundra rivers are intimately linked, and higher concentrations of weathering products are found in taiga and tundra rivers with a higher percentage of peat in their watersheds. It appears that the weathering regime of taiga and tundra watersheds is tightly linked to carbon-silicon interactions, in which carbon acts both as a weathering agent (soil CO2 from degradation of OC) and as a weathering product (DSi and bicarbonate). Whereas respiration of OC can be regarded as a positive feedback to global warming, weathering can be regarded as a negative feedback to global warming since atmospheric CO2 is converted to bicarbonate and thereby locked into the aquatic phase for geological time scales. Thus, bicarbonate export may compensate for significant amounts of exported OC thereby reducing the positive feedback to atmospheric CO2. However, the silicon-carbon interactions are not straight forward as suggested by classical inverse modelling,using the stochiometry of rock forming minerals as base, since high latitude wetlands contain a massive stock of amorphous silica (diatoms and phytoliths) buffering the actual DSi export, suggesting that the Si cycle is to a large extent biologically controlled.

  7. A microstrip silicon telescope for high performance particle tracking

    Science.gov (United States)

    Lietti, D.; Berra, A.; Prest, M.; Vallazza, E.

    2013-11-01

    Bent crystals are thin silicon/germanium devices that act as a bulk dipole magnet and thus are able to deflect relativistic charged particle beams with high efficiency (up to 98%). To study their behavior on extracted beamlines in terms of deflection capability and efficiency, a fast and high position resolution telescope is needed such as the INSULAB telescope. It consists in several modules equipped with double or single side silicon detectors readout by different ASICs. The Data Acquisition system is designed to work with pulsed beams minimizing the dead time to allow the collection of a large statistics in a short time. It is based on custom VME readout/memory boards for the data storage and 12 bit ADC custom boards for the signal digitization; the present maximum DAQ rate is 6 kHz. A detailed description of the detectors, the ASICs and the readout system together with the results obtained at the SPS H4 and PS T9 CERN beamlines in terms of spatial resolution and charge sharing are presented.

  8. High mechanical Q-factor measurements on silicon bulk samples

    Energy Technology Data Exchange (ETDEWEB)

    Nawrodt, R; Zimmer, A; Koettig, T; Schwarz, C; Heinert, D; Hudl, M; Neubert, R; Thuerk, M; Nietzsche, S; Vodel, W; Seidel, P [Friedrich-Schiller-Universitaet, Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, A [Friedrich-Schiller-Universitaet, Institut fuer Angewandte Physik, Max-Wien-Platz 1, D-07743 Jena (Germany)], E-mail: ronny.nawrodt@uni-jena.de

    2008-07-15

    Future gravitational wave detectors will be limited by different kinds of noise. Thermal noise from the coatings and the substrate material will be a serious noise contribution within the detection band of these detectors. Cooling and the use of a high mechanical Q-factor material as a substrate material will reduce the thermal noise contribution from the substrates. Silicon is one of the most interesting materials for a third generation cryogenic detector. Due to the fact that the coefficient of thermal expansion vanishes at 18 and 125 K the thermoelastic contribution to the thermal noise will disappear. We present a systematic analysis of the mechanical Q-factor at low temperatures between 5 and 300 K on bulk silicon (100) samples which are boron doped. The thickness of the cylindrical samples is varied between 6, 12, 24, and 75mm with a constant diameter of 3 inches. For the 75mm substrate a comparison between the (100) and the (111) orientation is presented. In order to obtain the mechanical Q-factor a ring-down measurement is performed. Thus, the substrate is excited to resonant vibrations by means of an electrostatic driving plate and the subsequent ring-down is recorded using a Michelson-like interferometer. The substrate itself is suspended as a pendulum by means of a tungsten wire loop. All measurements are carried out in a special cryostat which provides a temperature stability of better than 0.1K between 5 and 300K during the experiment. The influence of the suspension on the measurements is experimentally investigated and discussed. At 5.8K a highest Q-factor of 4.5 x 10{sup 8} was achieved for the 14.9 kHz mode of a silicon (100) substrate with a diameter of 3 inches and a thickness of 12 mm.

  9. Review of silicon solar cells for high concentrations

    Science.gov (United States)

    Schwartz, R. J.

    1982-06-01

    The factors that limit the performance of high concentration silicon solar cells are reviewed. The design of a conventional high concentration cell is discussed, together with the present state of the art. Unconventional cell designs that have been proposed to overcome the limitations of the conventional design are reviewed and compared. The current status of unconventional cells is reviewed. Among the unconventional cells discussed are the interdigitated back-contact cell, the double-sided cell, the polka dot cell, and the V-groove cell. It is noted that all the designs for unconventional cells require long diffusion lengths for high efficiency operation, even though the demands in this respect are less for those cells with the optical path longer than the diffusion path.

  10. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  11. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  12. Production Testing and Quality Assurance of CMS Silicon Microstrip Tracker Readout Chips

    CERN Document Server

    Barrillon, Pierre; Hall, Geoffrey; Leaver, James; Noah, E; Raymond, M; Bisello, Dario; Candelori, Andrea; Kaminski, A; Stefanuti, L; Tessaro, Mario; French, Marcus

    2004-01-01

    The APV25 is the 128 channel CMOS chip developed for readout of the silicon microstrip tracker in the CMS experiment at the CERN Large Hadron Collider. The detector is now under construction and will be the largest silicon microstrip system ever built, with ~200m^2 of silicon sensors. Around 10^5 chips are required to instrument the system, which must operate for about 10 years in a high radiation environment with little or no possibility of microstrip system ever built, with ~200m^2 of silicon sensors. Around 10^5 chips are required to instrument the system, which must operate for about 10 years in a high radiation environment with little or no possibility of assurance of long term performance of the readout electronics, especially verification of radiation tolerance, is highly desirable. This has been achieved by means of automated probe testing of every chip on the silicon wafers from the foundry, followed by studies of sample die to evaluate in more detail properties of the chips which cannot easily be ex...

  13. Optimization of process parameters in a large-area hot-wire CVD reactor for the deposition of amorphous silicon (a-Si:H) for solar cell application with highly uniform material quality

    Energy Technology Data Exchange (ETDEWEB)

    Pflueger, A.; Mukherjee, C.; Schroeder, B. [Department of Physics, Center of Materials Science, University of Kaiserslautern, P.O. Box 3049, D-67653 Kaiserslautern (Germany)

    2002-07-01

    Scale-up of a-Si:H-based thin film applications such as solar cells, entirely or partly prepared by hot-wire chemical vapor deposition (HWCVD), requires research on the deposition process in a large-area HWCVD system. The influence of gas supply and filament geometry on thickness uniformity has already been reported, but their influence on material quality is systematically studied for the first time. The optimization of deposition parameters for obtaining best material quality in our large-area HWCVD system resulted in an optimum filament temperature, T{sub fil}{approx}1600C, pressure, p=8mTorr and silane flow, F(SiH{sub 4})=100sccm, keeping the substrate temperature at T{sub S}=200C. A special gas supply (gas shower with tiny holes of uniform size) and a filament grid, consisting of six filaments with an interfilament distance, d{sub fil}=4cm were used. The optimum filament-to-substrate distance was found to be d{sub fil-S}=8.4cm. While studying the influence of different d{sub fil} and gas supply configurations on the material quality, the above-mentioned setup and parameters yield best results for both uniformity and material quality. With the setup mentioned, we could achieve device quality a-Si:H films with a thickness uniformity of {+-}2.5% on a circular area of 20cm in diameter. The material, grown at a deposition rate of r{sub d}{approx}4A/s, was characterized on nine positions of the 30cmx30cm substrate area, and revealed reasonable uniformity of the opto-electronic properties, e.g photosensitivity, {sigma}{sub Ph}/{sigma}{sub D}=(2.46{+-}0.7)x10{sup 5}, microstructure factor, R=0.17{+-}0.05, defect densities, N{sub d(PDS)}=(2.06{+-}0.6)x10{sup 17}cm{sup -3} and N{sub d(CPM)}=(2.05{+-}0.5)x10{sup 16}cm{sup -3} (film properties are given as mean values and standard deviations). Finally, we fabricated pin solar cells, with the i-layer deposited on small-area p-substrates distributed over an area of 20cmx20cm in this large-area deposition system, and

  14. 193nm immersion lithography for high-performance silicon photonic circuits

    Science.gov (United States)

    Selvaraja, Shankar K.; Winroth, Gustaf; Locorotondo, Sabrina; Murdoch, Gayle; Milenin, Alexey; Delvaux, Christie; Ong, Patrick; Pathak, Shibnath; Xie, Weiqiang; Sterckx, Gunther; Lepage, Guy; Van Thourhout, Dries; Bogaerts, Wim; Van Campenhout, Joris; Absil, Philippe

    2014-04-01

    Large-scale photonics integration has been proposed for many years to support the ever increasing requirements for long and short distance communications as well as package-to-package interconnects. Amongst the various technology options, silicon photonics has imposed itself as a promising candidate, relying on CMOS fabrication processes. While silicon photonics can share the technology platform developed for advanced CMOS devices it has specific dimension control requirements. Though the device dimensions are in the order of the wavelength of light used, the tolerance allowed can be less than 1% for certain devices. Achieving this is a challenging task which requires advanced patterning techniques along with process control. Another challenge is identifying an overlapping process window for diverse pattern densities and orientations on a single layer. In this paper, we present key technology challenges faced when using optical lithography for silicon photonics and advantages of using the 193nm immersion lithography system. We report successful demonstration of a modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology. By careful process design, within-wafer CD variation (1sigma) of 20 % from the best propagation loss reported for this cross-section fabricated using e-beam lithography. By using a single-mode low-confinement waveguide geometry the loss is further reduced to ~0.12 dB/cm. Secondly, we present improvement in within-device phase error in wavelength selective devices, a critical parameter which is a direct measure of line-width uniformity improvement due to the 193nm immersion system. In addition to these superior device performances, the platform opens scenarios for designing new device concepts using sub-wavelength features. By taking advantage of this, we demonstrate a cost-effective robust single-etch sub-wavelength structure based fiber-chip coupler with a coupling efficiency of 40 % and high-quality

  15. Characterization of Three High Efficiency and Blue Sensitive Silicon Photomultipliers

    CERN Document Server

    Otte, Adam Nepomuk; Nguyen, Thanh; Purushotham, Dhruv

    2016-01-01

    We report about the optical and electrical characterization of three high efficiency and blue sensitive Silicon photomultipliers from FBK, Hamamatsu, and SensL. Key features of the tested devices when operated at 90% breakdown probability are peak photon detection efficiencies between 40% and 55%, temperature dependencies of gain and PDE that are less than 1%/$^{\\circ}$C, dark rates of $\\sim$50\\,kHz/mm$^{2}$ at room temperature, afterpulsing of about 2%, and direct optical crosstalk between 6% and 20%. The characteristics of all three devices impressively demonstrate how the Silicon-photomultiplier technology has improved over the past ten years. It is further demonstrated how the voltage and temperature characteristics of a number of quantities can be parameterized on the basis of physical models. The models provide a deeper understanding of the device characteristics over a wide bias and temperature range. They also serve as examples how producers could provide the characteristics of their SiPMs to users. A...

  16. Characterization of three high efficiency and blue sensitive silicon photomultipliers

    Science.gov (United States)

    Otte, Adam Nepomuk; Garcia, Distefano; Nguyen, Thanh; Purushotham, Dhruv

    2017-02-01

    We report about the optical and electrical characterization of three high efficiency and blue sensitive Silicon photomultipliers from FBK, Hamamatsu, and SensL. Key features of the tested devices when operated at 90% breakdown probability are peak photon detection efficiencies between 40% and 55%, temperature dependencies of gain and PDE that are less than 1%/°C, dark rates of ∼50 kHz/mm2 at room temperature, afterpulsing of about 2%, and direct optical crosstalk between 6% and 20%. The characteristics of all three devices impressively demonstrate how the Silicon-photomultiplier technology has improved over the past ten years. It is further demonstrated how the voltage and temperature characteristics of a number of quantities can be parameterized on the basis of physical models. The models provide a deeper understanding of the device characteristics over a wide bias and temperature range. They also serve as examples how producers could provide the characteristics of their SiPMs to users. A standardized parameterization of SiPMs would enable users to find the optimal SiPM for their application and the operating point of SiPMs without having to perform measurements thus significantly reducing design and development cycles.

  17. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede;

    2015-01-01

    High driving voltages currently limit the commercial potential of dielectric elastomers (DEs). One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permittivity was prepared through the synthesis o...

  18. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    High driving voltages currently limit the commercial potential of dielectric elastomers (DEs). One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permittivity was prepared through the synthesis o...

  19. Synthetic Strategies for High Dielectric Constant Silicone Elastomers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt

    Dielectric electroactive polymers (DEAPs) are a new and promising transducer technology and are often referred to as ‘artificial muscles’, due to their ability to undergo large deformations when stimulated by electric fields. DEAPs consist of a soft and thin elastomeric film (an elastomer...... synthetic strategies were developed in this Ph.D. thesis, in order to create silicone elastomers with high dielectric constants and thereby higher energy densities. The work focused on maintaining important properties such as dielectric loss, electrical breakdown strength and elastic modulus....... The methodology therefore involved chemically grafting high dielectric constant chemical groups onto the elastomer network, as this would potentially provide a stable elastomer system upon continued activation of the material. The first synthetic strategy involved the synthesis of a new type of cross...

  20. Patterned growth of high aspect ratio silicon wire arrays at moderate temperature

    Science.gov (United States)

    Morin, Christine; Kohen, David; Tileli, Vasiliki; Faucherand, Pascal; Levis, Michel; Brioude, Arnaud; Salem, Bassem; Baron, Thierry; Perraud, Simon

    2011-04-01

    High aspect ratio silicon wire arrays with excellent pattern fidelity over wafer-scale area were grown by chemical vapor deposition at moderate temperature, using a gas mixture of silane and hydrogen chloride. An innovative two-step process was developed for in situ doping of silicon wires by diborane. This process led to high p-type doping levels, up to 10 18-10 19 cm -3, without degradation of the silicon wire array pattern fidelity.

  1. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  2. A quality comparison of protein crystals grown under containerless conditions generated by diamagnetic levitation, silicone oil and agarose gel.

    Science.gov (United States)

    Cao, Hui-Ling; Sun, Li-Hua; Li, Jian; Tang, Lin; Lu, Hui-Meng; Guo, Yun-Zhu; He, Jin; Liu, Yong-Ming; Xie, Xu-Zhuo; Shen, He-Fang; Zhang, Chen-Yan; Guo, Wei-Hong; Huang, Lin-Jun; Shang, Peng; He, Jian-Hua; Yin, Da-Chuan

    2013-10-01

    High-quality crystals are key to obtaining accurate three-dimensional structures of proteins using X-ray diffraction techniques. However, obtaining such protein crystals is often a challenge. Several containerless crystallization techniques have been reported to have the ability to improve crystal quality, but it is unknown which is the most favourable way to grow high-quality protein crystals. In this paper, a quality comparison of protein crystals which were grown under three containerless conditions provided by diamagnetic levitation, silicone oil and agarose gel was conducted. A control experiment on a vessel wall was also simultaneously carried out. Seven different proteins were crystallized under the four conditions, and the crystal quality was assessed in terms of the resolution limit, the mosaicity and the Rmerge. It was found that the crystals grown under the three containerless conditions demonstrated better morphology than those of the control. X-ray diffraction data indicated that the quality of the crystals grown under the three containerless conditions was better than that of the control. Of the three containerless crystallization techniques, the diamagnetic levitation technique exhibited the best performance in enhancing crystal quality. This paper is to our knowledge the first report of improvement of crystal quality using a diamagnetic levitation technique. Crystals obtained from agarose gel demonstrated the second best improvement in crystal quality. The study indicated that the diamagnetic levitation technique is indeed a favourable method for growing high-quality protein crystals, and its utilization is thus potentially useful in practical efforts to obtain well diffracting protein crystals.

  3. Kinetics of diamond-silicon reaction under high pressure-high temperature conditions

    Science.gov (United States)

    Pantea, Cristian

    In this dissertation work, the kinetics of the reaction between diamond and silicon at high pressure-high temperature conditions was investigated. This study was motivated by the extremely limited amount of information related to the kinetics of the reaction in diamond-silicon carbide composites formation. It was found that the reaction between diamond and melted silicon and the subsequent silicon carbide formation is a two-stage process. The initial stage is a result of direct reaction of melted silicon with carbon atoms from the diamond surface, the phase boundary reaction. Further growth of SiC is much more complicated and when the outer surfaces of diamond crystals are covered with the silicon carbide layer it involves diffusion of carbon and silicon atoms through the SiC layer. The reaction takes place differently for the two regions of stability of carbon. In the graphite-stable region, the reaction between diamond and melted silicon is associated with the diamond-to-graphite phase transition, while in the diamond-stable region there is no intermediary step for the reaction. The data obtained at HPHT were fitted by the Avrami-Erofeev equation. It was found that the reaction is isotropic, the beta-SiC grown on different faces of the diamond crystals showing the same reaction rate, and that the controlling mechanism for the reaction is the diffusion. In the graphite-stable region the activation energy, 402 kJ/mol is slightly higher than in the diamond-stable region, 260 kJ/mol, as the reaction between diamond and melted silicon is associated with the diamond-to-graphite phase transition, which has higher activation energy. In the diamond-stable region, the calculated activation energy is higher for micron size diamond powders (≈260 kJ/mol), while for nanocrystalline diamond powders a lower value of 170 kJ/mol was obtained. This effect was attributed to nanocrystalline structure and strained bonds within grain boundaries in SiC formed from nanosize diamond

  4. Controlling damping and quality factors of silicon microcantilevers by selective metallization

    Science.gov (United States)

    Sosale, Guruprasad; Das, Kaushik; Fréchette, Luc; Vengallatore, Srikar

    2011-10-01

    Ceramic microresonators coated with relatively thin metallic films are widely used for sensing, scanning probe microscopy, signal processing and vibration energy harvesting. The metallization improves optical reflectivity and electrical conductivity, but invariably degrades the quality factor (Q) of resonance by increasing the amount of energy dissipated during vibration. Developing strategies for controlling damping due to metallization is vital for the design of high-performance microresonators. This paper presents a strategy based on the insight that dissipation is a function of the deformation experienced by the thin film during oscillation. Therefore, damping can be controlled by patterning the metal in regions of low strain. A simple analytical model is developed to quantify the change in damping as a function of selective metallization along the length of a microcantilever. The predictions of this model are in good agreement with measurements of damping in single-crystal silicon microcantilevers that are partially coated on one surface with 100 nm thick aluminum films. Crucially, damping due to clamping, support and viscous losses is minimized in these structures to enable a careful comparison of theory with experiments. Coating 20% of the length of the beam starting from the tip has no significant impact on damping in either the first or the second mode of vibration. In contrast, placing the same size of metallization at the root leads to considerable dissipation; in the first mode, the damping due to this patch is ~60% of that caused by a full coat.

  5. Method of Assembling a Silicon Carbide High Temperature Anemometer

    Science.gov (United States)

    Okojie, Robert S. (Inventor); Fralick, Gustave C. (Inventor); Saad, George J. (Inventor)

    2004-01-01

    A high temperature anemometer includes a pair of substrates. One of the substrates has a plurality of electrodes on a facing surface, while the other of the substrates has a sensor cavity on a facing surface. A sensor is received in the sensor cavity, wherein the sensor has a plurality of bondpads, and wherein the bondpads contact the plurality of electrodes when the facing surfaces are mated with one another. The anemometer further includes a plurality of plug-in pins, wherein the substrate with the cavity has a plurality of trenches with each one receiving a plurality of plug-in pins. The plurality of plug-in pins contact the plurality of electrodes when the substrates are mated with one another. The sensor cavity is at an end of one of the substrates such that the sensor partially extends from the substrate. The sensor and the substrates are preferably made of silicon carbide.

  6. High Strength Silicon Carbide Foams and Their Deformation Behavior

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Silicon carbide (SiC) foams with a continuously connected open-cell structure were prepared and characterized for their mechanical performance. The apparent densities of SiC foams were controlled between about 0.4 and 1.3 g/cm3, with corresponding compressive strengths ranging from about 13 to 60 MPa and flexural strengths from about 8 to 30 MPa. Compressive testing of the SiC foams yielded stress-strain curves with only one linear-elastic region, which is different from those reported on ceramic foams in literature. This can possibly be attributed to the existence of filaments with fine, dense and high strength microstructures. The SiC and the filaments respond homogeneously to applied loading.

  7. Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

    Science.gov (United States)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

    2004-01-01

    Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the

  8. High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

    Science.gov (United States)

    Dhyani, Veerendra; Das, Samaresh

    2017-03-01

    Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere.

  9. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai [ORNL; Koyanagi, Takaaki [ORNL; Kiggans, Jim [ORNL; Cetiner, Nesrin [ORNL; McDuffee, Joel [ORNL

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  10. Fabrication of High-Temperature-Stable Thermoelectric Generator Modules Based on Nanocrystalline Silicon

    Science.gov (United States)

    Kessler, V.; Dehnen, M.; Chavez, R.; Engenhorst, M.; Stoetzel, J.; Petermann, N.; Hesse, K.; Huelser, T.; Spree, M.; Stiewe, C.; Ziolkowski, P.; Schierning, G.; Schmechel, R.

    2014-05-01

    High-temperature-stable thermoelectric generator modules (TGMs) based on nanocrystalline silicon have been fabricated, characterized by the Harman technique, and measured in a generator test facility at the German Aerospace Center. Starting with highly doped p- and n-type silicon nanoparticles from a scalable gas-phase process, nanocrystalline bulk silicon was obtained using a current-activated sintering technique. Electrochemical plating methods were employed to metalize the nanocrystalline silicon. The specific electrical contact resistance ρ c of the semiconductor-metal interface was characterized by a transfer length method. Values as low as ρ c cold-side temperature of 300°C.

  11. Silicon clathrates and carbon analogs: high pressure synthesis, structure, and superconductivity.

    Science.gov (United States)

    Yamanaka, Shoji

    2010-02-28

    Compounds with cage-like structures of elemental silicon and carbon are comparatively reviewed. Barium containing silicon clathrate compounds isomorphous with type I gas hydrates were prepared using high pressure and high temperature (HPHT) conditions, and found to become superconductors. The application of HPHT conditions to Zintl binary silicides have produced a number of silicon-rich cage-like structures including new clathrate structures; most of them are superconductors. Carbon analogs of silicon clathrates can be prepared by 3D polymerization of C(60) under HPHT conditions, which are new allotropes of carbon with expanded framework structures. The crystal chemistry and characteristic properties of some related compounds are also reviewed.

  12. Microarc Oxidation of the High-Silicon Aluminum AK12D Alloy

    Directory of Open Access Journals (Sweden)

    S. K. Kiseleva

    2015-01-01

    Full Text Available The aim of work is to study how the high-silicon aluminum AK12D alloy microstructure and MAO-process modes influence on characteristics (microhardness, porosity and thickness of the oxide layer of formed surface layer.Experimental methods of study:1 MAO processing of AK12D alloy disc-shaped samples. MAO modes features are concentration of electrolyte components – soluble water glass Na2SiO3 and potassium hydroxide (KOH. The content of two components both the soluble water glass and the potassium hydroxide was changed at once, with their concentration ratio remaining constant;2 metallographic analysis of AK12D alloy structure using an optical microscope «Olympus GX51»;3 image analysis of the system "alloy AK12D - MAO - layer" using a scanning electron microscope «JEOL JSM 6490LV»;4 hardness evaluation of the MAO-layers using a micro-hardness tester «Struers Duramin».The porosity, microhardness and thickness of MAO-layer formed on samples with different initial structures are analyzed in detail. Attention is paid to the influence of MAO process modes on the quality layer.It has been proved that the MAO processing allows reaching quality coverage with high microhardness values of 1200-1300HV and thickness up to 114 μm on high-silicon aluminum alloy. It has been found that the initial microstructure of alloy greatly affects the thickness of the MAO - layer. The paper explains the observed effect using the physical principles of MAO process and the nature of silicon particles distribution in the billet volume.It has been shown that increasing concentration of sodium silicate and potassium hydroxide in the electrolyte results in thicker coating and high microhardness.It has been revealed that high microhardness is observed in the thicker MAO-layers.Conclusions:1 The microstructure of aluminum AK12D alloy and concentration of electrolyte components - liquid glass Na2SiO3 and potassium hydroxide affect the quality of coating resulted from MAO

  13. Effect of silicon carbide ceramic coating process on the mirror surface quality

    Science.gov (United States)

    Wang, Peipei; Wang, Li; Wang, Gang; Bai, Yunli; Wang, Peng; Xiao, Zhenghang

    2016-10-01

    Silicon carbide, as a new reflector material, its excellent physical and chemical properties has been widely recognized by the industry. In order to make SiC mirror better used in space optical system, we used digital coating equipment during its coating process. By using ion-assisted electron evaporation method, we got a complete metal reflective film system on the surface of finely polished silicon carbide mirror. After automated coating process, by adjusting the coating parameters during the process, the surface roughness of silicon carbide improved from 7.8 nm to 5.1 nm, and the average optical reflectance of the surface reached 95% from visible to near-infrared. The metal reflective film system kept well after annealing and firmness test. As a result, the work of this paper will provide an important reference for high-precision coating process on large diameter SiC mirror.

  14. Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule

    Energy Technology Data Exchange (ETDEWEB)

    Emanuel Sachs

    2013-01-16

    The project fits within the area of renewable energy called photovoltaics (PV), or the generation of electricity directly from sunlight using semiconductor devices. PV has the greatest potential of any renewable energy technology. The vast majority of photovoltaic modules are made on crystalline silicon wafers and these wafers accounts for the largest fraction of the cost of a photovoltaic module. Thus, a method of making high quality, low cost wafers would be extremely beneficial to the PV industry The industry standard technology creates wafers by casting an ingot and then sawing wafers from the ingot. Sawing rendered half of the highly refined silicon feedstock as un-reclaimable dust. Being a brittle material, the sawing is actually a type of grinding operation which is costly both in terms of capital equipment and in terms of consumables costs. The consumables costs associated with the wire sawing technology are particularly burdensome and include the cost of the wire itself (continuously fed, one time use), the abrasive particles, and, waste disposal. The goal of this project was to make wafers directly from molten silicon with no sawing required. The fundamental concept was to create a very low cost (but low quality) wafer of the desired shape and size and then to improve the quality of the wafer by a specialized thermal treatment (called re-crystallization). Others have attempted to create silicon sheet by recrystallization with varying degrees of success. Key among the difficulties encountered by others were: a) difficulty in maintaining the physical shape of the sheet during the recrystallization process and b) difficulty in maintaining the cleanliness of the sheet during recrystallization. Our method solved both of these challenges by encapsulating the preform wafer in a protective capsule prior to recrystallization (see below). The recrystallization method developed in this work was extremely effective at maintaining the shape and the cleanliness of the

  15. Automatic Replenishment Of Dopant In Silicon Growth

    Science.gov (United States)

    Kochka, E. L.

    1988-01-01

    Dopant incorporated feed pellets to maintain required concentration. Technique of continuous replenishment of dopant in silicon melt helps ensure correct resistivity in solid silicon grown from melt. Technique used in dendritic-web growth process in which ribbon of silicon continously pulled from molten material. Providing uniform doping and resistivity in ribbon technique enables production of high-quality silicon ribbon at high yields for use in semiconductor devices.

  16. Low noise high-Tc superconducting bolometers on silicon nitride membranes for far-infrared detection

    NARCIS (Netherlands)

    Nivelle, de M.J.M.E.; Bruijn, M.P.; Vries, de R.; Wijnbergen, J.J.; Korte, de P.A.J.; Sanchez, S.; Elwenspoek, M.; Heidenblut, T.; Schwierzi, B.; Michalke, W.; Steinbeiss, E.

    1997-01-01

    High-Tc GdBa2Cu3O7 – delta superconductor bolometers with operation temperatures near 89 K, large receiving areas of 0.95 mm2 and very high detectivity have been made. The bolometers are supported by 0.62 µm thick silicon nitride membranes. A specially developed silicon-on-nitride layer was used to

  17. Deep anisotropic dry etching of silicon microstructures by high-density plasmas

    NARCIS (Netherlands)

    Blauw, M.A.

    2004-01-01

    This thesis deals with the dry etching of deep anisotropic microstructures in monocrystalline silicon by high-density plasmas. High aspect ratio trenches are necessary in the fabrication of sensitive inertial devices such as accellerometers and gyroscopes. The etching of silicon in fluorine-based

  18. A robust approach to the generation of high-quality random numbers

    Science.gov (United States)

    Bisadi, Zahra; Fontana, Giorgio; Moser, Enrico; Pucker, Georg; Pavesi, Lorenzo

    2016-10-01

    A random number generation approach comprising a silicon nanocrystals LED (Si-NCs LED), silicon single photon avalanche photodiode (Si SPAD) and a field-programmable gate array (FPGA) is introduced. The Si-NCs LED is the source of entropy with photon emission in the visible range detectable by silicon detectors allowing the fabrication of an all-silicon-based device. The proposed quantum random number generator (QRNG) is robust against variations of the internal and external parameters such as aging of the components, changing temperature, the ambient interferences and the silicon detector artifacts. The raw data show high quality of randomness and passed all the statistical tests in National Institute of Standards and Technology (NIST) tests suite without the application of a post-processing algorithm. The efficiency of random number generation is 4-bits per detected photon.

  19. Impurity distribution and reduction behaviour of quartz in the production of high purity silicon

    OpenAIRE

    Dal Martello, Elena

    2012-01-01

    The production of solar grade silicon is based on the use of expensive high purity carbon and quartz feedstock as well as various silicon refining techniques. Impurities in the feedstock materials enter the silicon during the carbothermic reduction of quartz. The knowledge of the impurity distribution/removal in the feedstock and in the carbothermic reduction process is necessary for targeting less pure and cheaper raw materials.The aim of the present study is to investigate the impurity dist...

  20. High power, high beam quality regenerative amplifier

    Science.gov (United States)

    Hackel, L.A.; Dane, C.B.

    1993-08-24

    A regenerative laser amplifier system generates high peak power and high energy per pulse output beams enabling generation of X-rays used in X-ray lithography for manufacturing integrated circuits. The laser amplifier includes a ring shaped optical path with a limited number of components including a polarizer, a passive 90 degree phase rotator, a plurality of mirrors, a relay telescope, and a gain medium, the components being placed close to the image plane of the relay telescope to reduce diffraction or phase perturbations in order to limit high peak intensity spiking. In the ring, the beam makes two passes through the gain medium for each transit of the optical path to increase the amplifier gain to loss ratio. A beam input into the ring makes two passes around the ring, is diverted into an SBS phase conjugator and proceeds out of the SBS phase conjugator back through the ring in an equal but opposite direction for two passes, further reducing phase perturbations. A master oscillator inputs the beam through an isolation cell (Faraday or Pockels) which transmits the beam into the ring without polarization rotation. The isolation cell rotates polarization only in beams proceeding out of the ring to direct the beams out of the amplifier. The diffraction limited quality of the input beam is preserved in the amplifier so that a high power output beam having nearly the same diffraction limited quality is produced.

  1. High-flux solar furnace processing of crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Pitts, J.R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Menna, P. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)]|[ENEA-Centro Ricerche Fotovoltaiche, Portici 80055 (Italy); Landry, M.D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Gee, J.M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)]|[Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Ciszek, T.F. [National Renewable Energy Laboratory, Golden, Colorado, 80401 (United States)

    1997-02-01

    We studied the processing of crystalline-silicon solar cells using a 10-kW, high-flux solar furnace (HFSF). Major findings of this study include: (1) hydrogenated amorphous silicon films deposited on glass substrates can be converted to microcrystalline silicon by solid-phase crystallization in 5 seconds or less in the HFSF; (2) the presence of concentrated sunlight enhances the diffusion of phosphorus into silicon from a spin-on dopant source; (3) the combination of a porous-silicon surface layer and photo-enhanced impurity diffusion is very effective in gettering impurities from a metallurgical-grade silicon wafer or thin-layer silicon deposited using liquid-phase epitaxy; (4) a 14.1{percent}-efficient crystalline-silicon solar cell with an area of 4.6cm{sup 2} was fabricated using the HFSF for simultaneous diffusion of front n{sup +}-p and back p-p{sup +} junctions; and (5) we have shown that the HFSF can be used to texture crystalline-silicon surfaces and to anneal metal contacts printed on a silicon solar cell. {copyright} {ital 1997 American Institute of Physics.}

  2. High-flux solar furnace processing of crystalline silicon solar cells

    Science.gov (United States)

    Tsuo, Y. S.; Pitts, J. R.; Menna, P.; Landry, M. D.; Gee, J. M.; Ciszek, T. F.

    1997-02-01

    We studied the processing of crystalline-silicon solar cells using a 10-kW, high-flux solar furnace (HFSF). Major findings of this study include: (1) hydrogenated amorphous silicon films deposited on glass substrates can be converted to microcrystalline silicon by solid-phase crystallization in 5 seconds or less in the HFSF; (2) the presence of concentrated sunlight enhances the diffusion of phosphorus into silicon from a spin-on dopant source; (3) the combination of a porous-silicon surface layer and photo-enhanced impurity diffusion is very effective in gettering impurities from a metallurgical-grade silicon wafer or thin-layer silicon deposited using liquid-phase epitaxy; (4) a 14.1%-efficient crystalline-silicon solar cell with an area of 4.6 cm2 was fabricated using the HFSF for simultaneous diffusion of front n+-p and back p-p+ junctions; and (5) we have shown that the HFSF can be used to texture crystalline-silicon surfaces and to anneal metal contacts printed on a silicon solar cell.

  3. Low Cost, High Efficiency, Silicon Based Photovoltaic Devices

    Science.gov (United States)

    2015-08-27

    93 (2004). [102] C. Chartier , S. Bastide, C. Lévy-Clément, Metal-assisted chemical etching of silicon in HF–H2O2, Electrochimica Acta, 53 (2008...ACS Applied Materials & Interfaces, 3 (2011) 3866-3873. [104] C. Chartier , S. Bastide, C. Levyclement, Metal-assisted chemical etching of silicon in

  4. Highly permeable and mechanically robust silicon carbide hollow fiber membranes

    NARCIS (Netherlands)

    de Wit, Patrick; Kappert, Emiel; Lohaus, T.; Wessling, Matthias; Nijmeijer, Arian; Benes, Nieck Edwin

    2015-01-01

    Silicon carbide (SiC) membranes have shown large potential for applications in water treatment. Being able to make these membranes in a hollow fiber geometry allows for higher surface-to-volume ratios. In this study, we present a thermal treatment procedure that is tuned to produce porous silicon

  5. Highly permeable and mechanically robust silicon carbide hollow fiber membranes

    NARCIS (Netherlands)

    Wit, de P.; Kappert, Emiel J.; Lohaus, T.; Wessling, M.; Nijmeijer, A.; Benes, N.E.

    2015-01-01

    Silicon carbide (SiC) membranes have shown large potential for applications in water treatment. Being able to make these membranes in a hollow fiber geometry allows for higher surface-to-volume ratios. In this study, we present a thermal treatment procedure that is tuned to produce porous silicon ca

  6. High deposition rate nanocrystalline silicon with enhanced homogeneity

    Energy Technology Data Exchange (ETDEWEB)

    Verkerk, Arjan; Rath, Jatindra K.; Schropp, Ruud [Section Nanophotonics-Physics of Devices, Debye Institute for Nanomaterials Science, Faculty of Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht (Netherlands)

    2010-03-15

    High rate growth of hydrogenated nanocrystalline silicon (nc-Si:H) brings additional challenges for the homogeneity in the growth direction, since the start-up effects affect a larger portion of the film, and the very high degree of depletion increases the influence of back diffusion from the inactive region into the plasma zone. It was calculated that back diffusion plays a role in the regime for high deposition rate (4.5 nm/s) via the residence time for particles in the plasma and the corresponding diffusion length for silane from outside the plasma. The stabilization time for back diffusion was derived and found to be on the order of tens of seconds. Experiment showed that the incubation layer for nc-Si:H is very thick in films deposited at a high rate compared to films deposited in a regime of lower deposition rate. The use of a hydrogen plasma start greatly reduced this incubation layer. Further control of the crystalline fraction could be achieved via slight reduction of the degree of depletion via the silane flow. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  7. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede;

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permi......-4-nitrobenzene. Here, a high increase in dielectric permittivity (similar to 70%) was obtained without compromising other favourable DE properties such as elastic modulus, gel fraction, dielectric loss and electrical breakdown strength. © 2014 Elsevier Ltd. All rights reserved....

  8. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    Science.gov (United States)

    Liu, Y.

    2010-02-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary work on trial and optimization of single junction and tandem cells on glass substrate, (2) silicon film depositions on Al foil, and afterwards the characterization and development of these cells/modules on a plastic substrate. The first objective includes the development of suitable ZnO:Al TCO for nc Si:H single junction solar cells, fabrication of the aimed micromorph tandem solar cells on glass, and finally the optimization of the nc-Si:H i-layer for the depositions afterwards on Al foil. Chapter 3 addresses the improvement of texture etching of ZnO:Al by studying the HCl etching effect on ZnO:Al films sputter-deposited in a set substrate heater temperature series. With the texture-etched ZnO:Al front TCO, a single junction nc-Si:H solar cell was deposited with an initial efficiency of 8.33%. Chapter 4 starts with studying the light soaking and annealing effects on micromorph tandem solar cell. In the end, a highly stabilized bottom cell current limited tandem cell was made. The tandem shows an initial efficiency of 10.2%, and degraded only 6.9% after 1600 h of light soaking. In Chapter 5, the nc-Si:H i-layers were studied in 3 pressure and inter-electrode distance series. The correlations between plasma physics and the consequent i-layers’ properties are investigated. We show that the Raman crystalline ratio and porosity of the nc-Si:H layer have an interesting relation with the p•d product. By varying p and d, device quality nc-Si:H layer can be deposited at a high rate of 0.6 nm/s. These results in fact are a very important step for the second objective. The second objective is covered by the entire Chapter 6. All silicon layers are deposited on special aluminum

  9. A bonding study toward the quality assurance of Belle-II silicon vertex detector modules

    Science.gov (United States)

    Kang, K. H.; Jeon, H. B.; Park, H.; Uozumi, S.; Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, T.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Joo, C. W.; Kandra, J.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Pilo, F.; Profeti, A.; Rao, K. K.; Rashevskaia, I.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.

    2016-09-01

    A silicon vertex detector (SVD) for the Belle-II experiment comprises four layers of double-sided silicon strip detectors (DSSDs), assembled in a ladder-like structure. Each ladder module of the outermost SVD layer has four rectangular and one trapezoidal DSSDs supported by two carbon-fiber ribs. In order to achieve a good signal-to-noise ratio and minimize material budget, a novel chip-on-sensor "Origami" method has been employed for the three rectangular sensors that are sandwiched between the backward rectangular and forward (slanted) trapezoidal sensors. This paper describes the bonding procedures developed for making electrical connections between sensors and signal fan-out flex circuits (i.e., pitch adapters), and between pitch adapters and readout chips as well as the results in terms of the achieved bonding quality and pull force.

  10. Fluorescent porous silicon biological probes with high quantum efficiency and stability.

    Science.gov (United States)

    Tu, Chang-Ching; Chou, Ying-Nien; Hung, Hsiang-Chieh; Wu, Jingda; Jiang, Shaoyi; Lin, Lih Y

    2014-12-01

    We demonstrate porous silicon biological probes as a stable and non-toxic alternative to organic dyes or cadmium-containing quantum dots for imaging and sensing applications. The fluorescent silicon quantum dots which are embedded on the porous silicon surface are passivated with carboxyl-terminated ligands through stable Si-C covalent bonds. The porous silicon bio-probes have shown photoluminescence quantum yield around 50% under near-UV excitation, with high photochemical and thermal stability. The bio-probes can be efficiently conjugated with antibodies, which is confirmed by a standard enzyme-linked immunosorbent assay (ELISA) method.

  11. Optical properties of highly nonlinear silicon-organic hybrid (SOH) waveguide geometries.

    Science.gov (United States)

    Vallaitis, Thomas; Bogatscher, Siegwart; Alloatti, Luca; Dumon, Pieter; Baets, Roel; Scimeca, Michelle L; Biaggio, Ivan; Diederich, François; Koos, Christian; Freude, Wolfgang; Leuthold, Juerg

    2009-09-28

    Geometry, nonlinearity, dispersion and two-photon absorption figure of merit of three basic silicon-organic hybrid waveguide designs are compared. Four-wave mixing and heterodyne pump-probe measurements show that all designs achieve high nonlinearities. The fundamental limitation of two-photon absorption in silicon is overcome using silicon-organic hybrid integration, with a five-fold improvement for the figure of merit (FOM). The value of FOM = 2.19 measured for silicon-compatible nonlinear slot waveguides is the highest value published.

  12. Flexible silver nanowire meshes for high-efficiency microtextured organic-silicon hybrid photovoltaics.

    Science.gov (United States)

    Chen, Ting-Gang; Huang, Bo-Yu; Liu, Hsiao-Wei; Huang, Yang-Yue; Pan, Huai-Te; Meng, Hsin-Fei; Yu, Peichen

    2012-12-01

    Hybrid organic-silicon heterojunction solar cells promise a significant reduction on fabrication costs by avoiding energy-intensive processes. However, their scalability remains challenging without a low-cost transparent electrode. In this work, we present solution-processed silver-nanowire meshes that uniformly cover the microtextured surface of hybrid heterojunction solar cells to enable efficient carrier collection for large device area. We systematically compare the characteristics and device performance with long and short nanowires with an average length/diameter of 30 μm/115 nm and 15 μm/45 nm, respectively, to those with silver metal grids. A remarkable power conversion efficiency of 10.1% is achieved with a device area of 1 × 1 cm(2) under 100 mW/cm(2) of AM1.5G illumination for the hybrid solar cells employing long wires, which represents an enhancement factor of up to 36.5% compared to the metal grid counterpart. The high-quality nanowire network displays an excellent spatial uniformity of photocurrent generation via distributed nanowire meshes and low dependence on efficient charge transport under a high light-injection condition with increased device area. The capability of silver nanowires as flexible transparent electrodes presents a great opportunity to accelerate the mass deployment of high-efficiency hybrid silicon photovoltaics via simple and rapid soluble processes.

  13. Preparation of electrochemically active silicon nanotubes in highly ordered arrays

    Directory of Open Access Journals (Sweden)

    Tobias Grünzel

    2013-10-01

    Full Text Available Silicon as the negative electrode material of lithium ion batteries has a very large capacity, the exploitation of which is impeded by the volume changes taking place upon electrochemical cycling. A Si electrode displaying a controlled porosity could circumvent the difficulty. In this perspective, we present a preparative method that yields ordered arrays of electrochemically competent silicon nanotubes. The method is based on the atomic layer deposition of silicon dioxide onto the pore walls of an anodic alumina template, followed by a thermal reduction with lithium vapor. This thermal reduction is quantitative, homogeneous over macroscopic samples, and it yields amorphous silicon and lithium oxide, at the exclusion of any lithium silicides. The reaction is characterized by spectroscopic ellipsometry for thin silica films, and by nuclear magnetic resonance and X-ray photoelectron spectroscopy for nanoporous samples. After removal of the lithium oxide byproduct, the silicon nanotubes can be contacted electrically. In a lithium ion electrolyte, they then display the electrochemical waves also observed for other bulk or nanostructured silicon systems. The method established here paves the way for systematic investigations of how the electrochemical properties (capacity, charge/discharge rates, cyclability of nanoporous silicon negative lithium ion battery electrode materials depend on the geometry.

  14. High Power Broadband Multispectral Source on a Hybrid Silicon Chip

    Science.gov (United States)

    2017-03-14

    silicon photonic network on chip,” Optica 3(7), 785–786 (2016). [8] Stanton, E. J., Heck, M. J. R., Bovington, J., Spott, A., and Bowers, J. E...Hutchinson, J., Shin, J.-H., Fish, G., and Fang, A., “Integrated silicon photonic laser sources for telecom and datacom,” in [National Fiber Optic...Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom -band-derived pump source,” Nat. Photon. 4(8), 561–564 (2010

  15. Deposited low temperature silicon GHz modulator

    CERN Document Server

    Lee, Yoon Ho Daniel; Lipson, Michal

    2013-01-01

    The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This discrepancy is a result of silicon photonics's requirement for a single-crystalline silicon (c-Si) layer and a thick undercladding for optical guiding that bulk silicon wafers to not provide. While the undercladding problem can be partially addressed by substrate removal techniques, the complexity of co-integrating photonics with state-of-the-art transistors and real estate competition between electronics and photonics remain problematic. We show here a platform for deposited GHz silicon photonics based on polycrystalline silicon with high optical quality suitable for high performance electro-optic devices. We demonstrate 3 Gbps polysilicon electro-optic modulator fabricated on a deposited polysilicon layer fully compatible with CMOS backend integration. These results open up an arr...

  16. Silicon/Porous Silicon Composite Membrane for High Sensitivity Pressure Sensor

    Science.gov (United States)

    2009-07-21

    Francia et al 2000). Stoney’s stress equation is given by equation 3.1 as Valve Vacuum Pump Pressure sensor with Si/PS composite membrane DC... Francia D G, V. La Ferrara, L. Lancellotti and L. Quercia (2000) Stress measurement technique to monitor porous silicon processing, Journal of

  17. Silicon Valley: Planet Startup : Disruptive Innovation, Passionate Entrepreneurship & High-tech Startups

    NARCIS (Netherlands)

    Ester, P.; Maas, A.

    2016-01-01

    For decades now, Silicon Valley has been the home of the future. It's the birthplace of the world's most successful high-tech companies-including Apple, Yahoo, Google, Facebook, Twitter, and many more. So what's the secret? What is it about Silicon Valley that fosters entrepreneurship and innovation

  18. Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

    2010-01-01

    A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

  19. Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

    Science.gov (United States)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

    2016-01-01

    Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

  20. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  1. Silicon Avalanche Pixel Sensor for High Precision Tracking

    CERN Document Server

    D'Ascenzo, N; Moon, C S; Morsani, F; Ratti, L; Saveliev, V; Navarro, A Savoy; Xie, Q

    2013-01-01

    The development of an innovative position sensitive pixelated sensor to detect and measure with high precision the coordinates of the ionizing particles is proposed. The silicon avalanche pixel sensors (APiX) is based on the vertical integration of avalanche pixels connected in pairs and operated in coincidence in fully digital mode and with the processing electronics embedded on the chip. The APiX sensor addresses the need to minimize the material budget and related multiple scattering effects in tracking systems requiring a high spatial resolution in the presence of a large occupancy. The expected operation of the new sensor features: low noise, low power consumption and suitable radiation tolerance. The APiX device provides on-chip digital information on the position of the coordinate of the impinging charged particle and can be seen as the building block of a modular system of pixelated arrays, implementing a sparsified readout. The technological challenges are the 3D integration of the device under CMOS ...

  2. High-temperature quantum kinetic effect in silicon nanosandwiches

    Science.gov (United States)

    Bagraev, N. T.; Grigoryev, V. Yu.; Klyachkin, L. E.; Malyarenko, A. M.; Mashkov, V. A.; Romanov, V. V.; Rul, N. I.

    2017-01-01

    The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high-temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface.

  3. Twin photon pairs in a high-Q silicon microresonator

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, Steven; Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Jiang, Wei C. [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States)

    2015-07-27

    We report the generation of high-purity twin photon pairs through cavity-enhanced non-degenerate four-wave mixing (FWM) in a high-Q silicon microdisk resonator. Twin photon pairs are created within the same cavity mode and are consequently expected to be identical in all degrees of freedom. The device is able to produce twin photons at telecommunication wavelengths with a pair generation rate as large as (3.96 ± 0.03) × 10{sup 5} pairs/s, within a narrow bandwidth of 0.72 GHz. A coincidence-to-accidental ratio of 660 ± 62 was measured, the highest value reported to date for twin photon pairs, at a pair generation rate of (2.47 ± 0.04) × 10{sup 4} pairs/s. Through careful engineering of the dispersion matching window, we have reduced the ratio of photons resulting from degenerate FWM to non-degenerate FWM to less than 0.15.

  4. Mobility and impact ionization in silicon at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Corvasce, C.

    2007-07-01

    In the field of the high-temperature modelling and simulation of semiconductor devices, most of the physical models available to date have been validated only to 400 K, in spite of the fact that the local heating during the stress event can lead to local temperatures well in excess of this limit. This work deals with the mobility and the impact ionization in silicon at high temperature. The mobility has been measured by the Hall technique up to 1000 K thanks to the use of dedicated Ti/TiN interconnections in combination with junction-free van der Pauw resistors, which are intrinsically immune of spurious thermal leakage currents. The hole and the electron impact ionization coefficients have been determined as a function of the electric field up to 673 K and 613 K, respectively, by measurements of the multiplication factor in bipolar and static induction transistors. The results collected in this work represent an extensive reference data set, which is suitable for the calibration of compact models for numerical simulation. (orig.)

  5. Composite silicone rubber of high piezoresistance repeatability filled with nanoparticles

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The ruthenium oxide nanoparticles with size less than 20 nm were fabricated by annealing the metallic ruthenium nanoparticles in air,which were synthesized by using the thermal reduction in the polyol solution.The rutile structure of the ruthenium oxide was proved by using transmission electron microscopy(TEM)and X-ray photoelectron spectroscopy(XPS).The oxide has good electron conductivity. The surface of the ruthenium oxide was modified by a vinyl silane coupling agent.The assembling of the silane to the oxide surface was proved by Infrared(IR)absorption spectroscopy.By mixing the nanoparticles with poly(methylvinylsiloxane)(PMVS)silicone rubber,a composite filled with dispersive conducting phase was fabricated.The temperature dependent conductivity shows that the electron transportation through composite is mainly dominated by tunneling.The measurement of piezoresistance shows that the composite at low strain has high piezoresistance repeatability.The 3D reconstruction images of the composite filled with carbon black or ruthenium oxide show that the aggregation of the nanoparticles differs much for two composites.The narrow distribution range of the particle size was thought to be the main factor for the high piezoresistance recurrence.

  6. Silicon Carbide Threads For High-Temperature Service

    Science.gov (United States)

    Sawko, Paul M.; Vasudev, Anand

    1991-01-01

    New thread material outperforms silica. Sewing threads containing silicon carbide (SiC) yarn withstand temperatures of more than 1,100 degrees C. Intended for use in stitching thermally insulating blankets.

  7. The emergence of high-performance multi-crystalline silicon in photovoltaics

    Science.gov (United States)

    Lan, C. W.; Lan, A.; Yang, C. F.; Hsu, H. P.; Yang, M.; Yu, A.; Hsu, B.; Hsu, W. C.; Yang, A.

    2017-06-01

    The emergence of the high-performance multi-crystalline silicon (HP mc-Si) in 2011 has made a significant impact to photovoltaic industry. In addition to the much better ingot uniformity and production yield, HP mc-Si also has better material quality for solar cells. As a result, the average efficiency of solar cells made from HP mc-Si in production increased from 16.6% in 2011 to 18.5% or beyond in 2016. More importantly, the efficiency distribution became much narrower; the difference from various producers became smaller as well. Unlike the conventional way of having large grains and electrically-inactive twin boundaries, the crystal growth of HP mc-Si by directional solidification is initiated from uniform small grains having a high fraction of random grain boundaries. The grains developed from such grain structures significantly relax thermal stress and suppress the massive generation and propagation of dislocation clusters. The gettering efficacy of HP mc-Si is also superior to the conventional one. Nowadays, most of commercial mc-Si is grown by this approach, which could be implemented by either seeded with silicon particles or controlled nucleation, e.g., using nucleation agent coating. The future improvement of this technology will also be discussed in this review.

  8. The INFN Micro-Si experiment: A silicon microdosimeter for assessing radiation quality of hadrontherapy beams

    Science.gov (United States)

    Agosteo, S.; Dal Corso, F.; Fazzi, A.; Gonella, F.; Introini, M. V.; Lippi, I.; Lorenzoli, M.; Pegoraro, M.; Pola, A.; Varoli, V.; Zotto, P.

    2013-07-01

    The MICRO-SI experiment, funded by INFN from 2008 up to 2010, aimed at developing a silicon microdosimeter capable of responding to neutrons and to hadron-therapy beams down to a few keV μm-1. The main goals which were achieved in the framework of this experiment are described in details. The detector, designed and fabricated by exploiting the monolithic telescope technology, demonstrated to provide charge confinement inside the micrometric sensitive volume, thus minimizing the field-funnelling effect. An innovative segmented telescope device was developed in order to have a silicon detector offering sensitive volume dimensions similar to those which can be simulated by a tissue-equivalent proportional counter (TEPC). The response of the segmented device to hadron beams was characterized with clinical protons and with 62 AMeV carbon ions at the INFN-Laboratori Nazionali del Sud (Catania, Italy). Irradiations with mono-energetic neutrons at the INFN-Laboratori Nazionali di Legnaro (Legnaro, Italy) were also performed. The agreement with the spectra measured with a TEPC is very satisfactory and gives confidence on the application of such a silicon device to assess the quality of hadrontherapy beams.

  9. Improved quality control of silicon wafers using novel off-line air pocket image analysis

    Science.gov (United States)

    Valley, John F.; Sanna, M. Cristina

    2014-08-01

    Air pockets (APK) occur randomly in Czochralski (Cz) grown silicon (Si) crystals and may become included in wafers after slicing and polishing. Previously the only APK of interest were those that intersected the front surface of the wafer and therefore directly impacted device yield. However mobile and other electronics have placed new demands on wafers to be internally APK-free for reasons of thermal management and packaging yield. We present a novel, recently patented, APK image processing technique and demonstrate the use of that technique, off-line, to improve quality control during wafer manufacturing.

  10. A new analytical model of high voltage silicon on insulator (SOI) thin film devices

    Institute of Scientific and Technical Information of China (English)

    Hu Sheng-Dong; Zhang Bo; Li Zhao-Ji

    2009-01-01

    A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.

  11. Self-heated silicon nanowires for high performance hydrogen gas detection

    Science.gov (United States)

    Ahn, Jae-Hyuk; Yun, Jeonghoon; Moon, Dong-Il; Choi, Yang-Kyu; Park, Inkyu

    2015-03-01

    Self-heated silicon nanowire sensors for high-performance, ultralow-power hydrogen detection have been developed. A top-down nanofabrication method based on well-established semiconductor manufacturing technology was utilized to fabricate silicon nanowires in wafer scale with high reproducibility and excellent compatibility with electronic readout circuits. Decoration of palladium nanoparticles onto the silicon nanowires enables sensitive and selective detection of hydrogen gas at room temperature. Self-heating of silicon nanowire sensors allows us to enhance response and recovery performances to hydrogen gas, and to reduce the influence of interfering gases such as water vapor and carbon monoxide. A short-pulsed heating during recovery was found to be effective for additional reduction of operation power as well as recovery characteristics. This self-heated silicon nanowire gas sensor will be suitable for ultralow-power applications such as mobile telecommunication devices and wireless sensing nodes.

  12. Stability of high temperature chemical vapor deposited silicon based structures on metals for solar conversion.

    Science.gov (United States)

    Gelard, Isabelle; Chichignoud, Guy; Blanquet, Elisabeth; Xuan, Hoan Nguyen; Cruz, Ruben; Jimenez, Carmen; Sarigiannidou, Eirini; Zaidat, Kader

    2011-09-01

    Highly crystallized silicon layers were grown on metal sheets at high temperature (950 degrees C) by thermal CVD from silane. An intermediate buffer layer was mandatory to prevent interdiffusion and silicide formation but also to compensate lattice parameters and thermal expansion coefficients mismatches between metal and silicon and ideally transfer some crystalline properties (grain size, texture) from the substrate to the silicon layer. After a thermodynamic study, aluminum nitride or titanium nitride diffusion barrier layers were selected and processed by CVD. The structure and the interfaces stabilities of these silicon/nitride/metal stacks were studied by field effect gun scanning and transmission electron microscopy, X-ray diffraction, Raman and energy dispersive X-ray spectroscopy. As a result, TiN deposited by CVD appears to be an efficient material as a buffer layer between steel and silicon.

  13. TRANSFORMATIONS IN NANO-DIAMONDS WITH FORMATION OF NANO-POROUS SILICON CARBIDE AT HIGH PRESSURE

    Directory of Open Access Journals (Sweden)

    V. N. Kovalevsky

    2010-01-01

    Full Text Available The paper contains investigations on regularities of diamond - silicon carbide composite structure formation at impact-wave excitation. It has been determined that while squeezing a porous blank containing Si (SiC nano-diamond by explosive detonation products some processes are taking place such as diamond nano-particles consolidation, reverse diamond transition into graphite, fragments formation from silicon carbide. A method for obtaining high-porous composites with the presence of ultra-disperse diamond particles has been developed. Material with three-dimensional high-porous silicon-carbide structure has been received due to nano-diamond graphitation at impact wave transmission and plastic deformation. The paper reveals nano-diamonds inverse transformation into graphite and its subsequent interaction with the silicon accompanied by formation of silicon-carbide fragments with dimensions of up to 100 nm.

  14. Silicon photomultipliers. Properties and applications in a highly granular calorimeter

    Energy Technology Data Exchange (ETDEWEB)

    Feege, Nils

    2008-12-15

    Silicon Photomultipliers (SiPMs) are novel semiconductor-based photodetectors operated in Geiger mode. Their response is not linear, and both their gain and their photon detection efficiency depend on the applied bias voltage and on temperature. The CALICE collaboration investigates several technology options for highly granular calorimeters for the future ILC. The prototype of a scintillator-steel sampling calorimeter with analogue readout for hadrons constructed at DESY and successfully operated in testbeam experiments at DESY, CERN and FNAL by this collaboration is the first large scale application for 7608 SiPMs developed by MEPhI. This thesis deals with properties of the SiPMs used in the calorimeter prototype. The effective numer of pixels of the SiPMs, which influences their saturation behaviour, is extracted from in situ measurements and compared to results obtained for the bare SiPMs. In addition, the effects of temperature and voltage changes on the parameters necessary for the calibration of the SiPMs and the detector are determined. Methods which allow for correcting or compensating these effects are evaluated. An approach to improve the absolute calibration of the temperature sensors in the prototype is described and temperature profiles are studied. Finally, a procedure to adjust the light yield of the cells of the prototype is presented. The results of the application of this procedure during the commissioning of the detector at FNAL are discussed. (orig.)

  15. High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

    2014-01-01

    Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

  16. Developing a High Thermal Conductivity Fuel with Silicon Carbide Additives

    Energy Technology Data Exchange (ETDEWEB)

    baney, Ronald; Tulenko, James

    2012-11-20

    The objective of this research is to increase the thermal conductivity of uranium oxide (UO{sub 2}) without significantly impacting its neutronic properties. The concept is to incorporate another high thermal conductivity material, silicon carbide (SiC), in the form of whiskers or from nanoparticles of SiC and a SiC polymeric precursor into UO{sub 2}. This is expected to form a percolation pathway lattice for conductive heat transfer out of the fuel pellet. The thermal conductivity of SiC would control the overall fuel pellet thermal conductivity. The challenge is to show the effectiveness of a low temperature sintering process, because of a UO{sub 2}-SiC reaction at 1,377°C, a temperature far below the normal sintering temperature. Researchers will study three strategies to overcome the processing difficulties associated with pore clogging and the chemical reaction of SiC and UO{sub 2} at temperatures above 1,300°C:

  17. Biomimetic and plasmonic hybrid light trapping for highly efficient ultrathin crystalline silicon solar cells.

    Science.gov (United States)

    Zhang, Y; Jia, B; Gu, M

    2016-03-21

    Designing effective light-trapping structures for the insufficiently absorbed long-wavelength light in ultrathin silicon solar cells represents a key challenge to achieve low cost and highly efficient solar cells. We propose a hybrid structure based on the biomimetic silicon moth-eye structure combined with Ag nanoparticles to achieve advanced light trapping in 2 μm thick crystalline silicon solar cells approaching the Yablonovitch limit. By synergistically using the Mie resonances of the silicon moth-eye structure and the plasmonic resonances of the Ag nanoparticles, the integrated absorption enhancement achieved across the usable solar spectrum is 69% compared with the cells with the conventional light trapping design. This is significantly larger than both the silicon moth-eye structure (58%) and Ag nanoparticle (41%) individual light trapping. The generated photocurrent in the 2 μm thick silicon layer is as large as 33.4 mA/cm2, which is equivalent to that generated by a 30 μm single-pass absorption in the silicon. The research paves the way for designing highly efficient light trapping structures in ultrathin silicon solar cells.

  18. Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism

    Science.gov (United States)

    Sahoo, A. K.; Subramani, N. K.; Nallatamby, J. C.; Sylvain, L.; Loyez, C.; Quere, R.; Medjdoub, F.

    2016-01-01

    In this paper, we present a comparative study on small-signal modeling of AlN/GaN/AlGaN double hetero-structure high electron mobility transistors (HEMTs) grown on silicon (Si) and silicon carbide (SiC) substrate. The traditional small signal equivalent circuit model is modified to take into account the transmission loss mechanism of coplanar waveguide (CPW) line which cannot be neglected at high frequencies. CPWs and HEMTs-on-AlN/GaN/AlGaN epitaxial layers are fabricated on both the Si and SiC substrates. S-parameter measurements at room temperature are performed over the frequency range from 0.5 GHz to 40 GHz. Transmission loss of CPW lines are modeled with a distributed transmission line (TL) network and an equivalent circuit model is included in the small-signal transistor model topology. Measurements and simulations are compared and found to be in good agreement.

  19. Synthesis and Characterization of Mesoporous Silicon Oxynitride MCM-41 with High Nitrogen Content

    Institute of Scientific and Technical Information of China (English)

    ZHANG Cunman; XU Zheng; LIU Qian

    2005-01-01

    Mesoporous silicon oxynitrides MCM-41 were synthesized successfully. The resulting materials not only have high nitrogen contents and good structural characteristics of MCM-41 (high surface area, narrow pore size distribution and good order), but also are amorphous. The composition and structure of the materials were investigated by CNH element analysis, XPS, Si MAS NMR, XRD, HRTEM and N2 sorption, respectively. Mesoporous silicon oxynitrides MCM-41 with a high nitrogen content are still non-crystal (amorphous).

  20. Silicon application to the soil on soybean yield and seed physiological quality

    Directory of Open Access Journals (Sweden)

    Sandro de Oliveira

    2015-10-01

    Full Text Available Use of quality seeds, balanced plant nutrition and the adoption of adequate cultivation techniques are critical to the success of the soybean crop. Use of silicon (Si is a clean technology from an environmental point of view, which can confer several benefits to the plants as stimulate growth and plant production, improve tolerance of plants to attack by insects and diseases, reduce perspiration and increase the photosynthetic rate and protect against abiotic stresses. The goal was to evaluate the effect of soil Si application derived from rice husk ash on the agronomic characteristics, productivity and physiological quality of soybean cultivars seeds. The experiment was conducted in pots of 18 L filled with soil, under a randomized block design with four replications. The soybean cultivars were BMX Turbo RR and NA 5909 RR, grown under five doses of silicon (0, 1, 2, 3, and 4 t ha-1. Agronomic traits and seed yield were evaluated (total number of pods on branches, total number of seeds on the branches, the total number of pods on the main stem, total number of seeds on the main stem, total number of pods per plant, total number of seeds per plant, seed weight per plant and seed weight of 1000. Physiological seed quality was evaluated by germination and vigor tests (first count of germination, cold test, accelerated aging, shoot length and root. The soil application of silicon is beneficial for the soybean crop, improving the main agronomic characteristics (total number of pods on branches, total number of seeds in the branches, total number of pods per plant, weight of seeds per plant and increasing seed yield per plant in soybean cultivar BMX Turbo RR. The mass of a thousand seeds is positively influenced by the dose of 1.67 t ha-1 for the cultivar BMX Turbo RR and up to a dose of 2.32 t ha-1 for the cultivar NA 5909 RR. Cultivar BMX Turbo RR seed vigor is increased with the use of silicon in the soil.

  1. High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation)

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Hirori, Hideki

    2017-01-01

    Summary form only given. Metallic antenna arrays fabricated on high resistivity silicon are used to localize and enhance the incident THz field resulting in high electric field pulses with peak electric field strength reaching several MV/cm on the silicon surface near the antenna tips. In such high...... electric field strengths high density of carriers are generated in silicon through impact ionization process. The high density of generated carriers induces a change of refractive index in silicon. By measuring the change of reflectivity of tightly focused 800 nm light, the local density of free carriers...... near the antenna tips is measured. Using the NIR probing technique, we observed that the density of carriers increases by over 8 orders of magnitude in a time duration of approximately 500 fs with an incident THz pulse of peak electric field strength 700 kV/cm. This shows that a single impact...

  2. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    Science.gov (United States)

    Knoops, Harm C. M.; de Peuter, K.; Kessels, W. M. M.

    2015-07-01

    The requirements on the material properties and growth control of silicon nitride (SiNx) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiNx by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiNx by plasma-assisted ALD and that this parameter can be linked to a so-called "redeposition effect". This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiNx ALD using SiH2(NHtBu)2 as precursor and N2 plasma as reactant, the gas residence time τ was found to determine both SiNx film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  3. Research on stable, high-efficiency, amorphous silicon multijunction modules

    Energy Technology Data Exchange (ETDEWEB)

    Catalano, A.; Bennett, M.; Chen, L.; D' Aiello, R.; Fieselmann, B.; Li, Y.; Newton, J.; Podlesny, R.; Yang, L. (Solarex Corp., Newtown, PA (United States). Thin Film Div.)

    1992-08-01

    This report describes work to demonstrate a multijunction module with a stabilized'' efficiency (600 h, 50{degrees}C, AM1.5) of 10.5%. Triple-junction devices and modules using a-Si:H alloys with carbon and germanium were developed to meet program goals. ZnO was used to provide a high optical transmission front contact. Proof of concept was obtained for several important advances deemed to be important for obtaining high (12.5%) stabilized efficiency. They were (1) stable, high-quality a-SiC:H devices and (2) high-transmission, textured ZnO. Although these developments were not scaled up and included in modules, triple-junction module efficiencies as high as 10.85% were demonstrated. NREL measured 9.62% and 9.00% indoors and outdoors, respectively. The modules are expected to lose no more than 20% of their initial performance. 28 refs.

  4. Stable passivations for high-efficiency silicon solar cells

    Science.gov (United States)

    Gruenbaum, P. E.; Gan, J. Y.; King, R. R.; Swanson, R. M.

    Initial designs of single-crystal silicon point-contact solar cells have shown a degradation in their efficiency after being exposed to concentrated sunlight. The main mechanism appears to be an increase in recombination centers at the Si/SiO2 interface due to ultraviolet light photoinjecting electrons from the silicon conduction band into the silicon dioxide that passivates the cell's front surface. Trichloroethane, texturization, and aluminum during the forming gas anneal all contribute to the instability of the interface. A reasonably good resistance to UV light can be obtained by putting a phosphorus diffusion at the surface and can be improved further by stripping off the deposited oxide after the diffusion and regrowing a dry thermal oxide. A second technique, which utilizes ultrathin oxides and thin polysilicon films and can yield stable point-contact solar cells that are more efficient at higher concentrations, is also described.

  5. Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

    Directory of Open Access Journals (Sweden)

    Mitsuoki Hishida

    2016-01-01

    Full Text Available Stopping the plasma-enhanced chemical vapor deposition (PECVD once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points, compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD.

  6. The Silicon Valley Eco System. High-energetic in many ways; Het Silicon Valley Eco Systeem: hoogenergetisch in vele opzichten

    Energy Technology Data Exchange (ETDEWEB)

    Van den Heuvel, J.

    2012-04-15

    The highly commended Silicon Valley Eco System is bubbling with energy with regard to the subjects that are focused upon, including sustainable energy, or the widely available expertise that is needed for the developments, good ideas, capital and optimism, fed by frequent examples of extraordinarily successful companies. The sheer endlessness of network opportunities joins all these elements frequently. This article addresses several noteworthy interactions in the field of sustainable energy over the last period. [Dutch] Het veel geroemde Silicon Valley eco systeem bruist van energie in de vorm van de onderwerpen waar men zich op richt, waaronder duurzame energie, of de ruim aanwezige expertise die nodig is voor de ontwikkelingen, goede ideeen, kapitaal, en optimisme, gevoed door regelmatige voorbeelden van buitensporig succesvolle bedrijven. De schier oneindige netwerkmogelijkheden brengen al deze elementen met grote regelmaat bij elkaar. In dit artikel volgen enkele vermeldenswaardige interacties op het vlak van duurzame energie uit de afgelopen periode.

  7. Thermal Transport in Silicon Nanowires at High Temperature up to 700 K.

    Science.gov (United States)

    Lee, Jaeho; Lee, Woochul; Lim, Jongwoo; Yu, Yi; Kong, Qiao; Urban, Jeffrey J; Yang, Peidong

    2016-07-13

    Thermal transport in silicon nanowires has captured the attention of scientists for understanding phonon transport at the nanoscale, and the thermoelectric figure-of-merit (ZT) reported in rough nanowires has inspired engineers to develop cost-effective waste heat recovery systems. Thermoelectric generators composed of silicon target high-temperature applications due to improved efficiency beyond 550 K. However, there have been no studies of thermal transport in silicon nanowires beyond room temperature. High-temperature measurements also enable studies of unanswered questions regarding the impact of surface boundaries and varying mode contributions as the highest vibrational modes are activated (Debye temperature of silicon is 645 K). Here, we develop a technique to investigate thermal transport in nanowires up to 700 K. Our thermal conductivity measurements on smooth silicon nanowires show the classical diameter dependence from 40 to 120 nm. In conjunction with Boltzmann transport equation, we also probe an increasing contribution of high-frequency phonons (optical phonons) in smooth silicon nanowires as the diameter decreases and the temperature increases. Thermal conductivity of rough silicon nanowires is significantly reduced throughout the temperature range, demonstrating a potential for efficient thermoelectric generation (e.g., ZT = 1 at 700 K).

  8. Silicon solar cell monitors high temperature furnace operation

    Science.gov (United States)

    Zellner, G. J.

    1968-01-01

    Silicon solar cell, attached to each viewpoint, monitors that incandescent emission from the hot interior of a furnace without interfering with the test assembly or optical pyrometry during the test. This technique can provide continuous indication of hot spots or provide warning of excessive temperatures in cooler regions.

  9. Modeling high signal-to-noise ratio in a novel silicon MEMS microphone with comb readout

    Science.gov (United States)

    Manz, Johannes; Dehe, Alfons; Schrag, Gabriele

    2017-05-01

    Strong competition within the consumer market urges the companies to constantly improve the quality of their devices. For silicon microphones excellent sound quality is the key feature in this respect which means that improving the signal-to-noise ratio (SNR), being strongly correlated with the sound quality is a major task to fulfill the growing demands of the market. MEMS microphones with conventional capacitive readout suffer from noise caused by viscous damping losses arising from perforations in the backplate [1]. Therefore, we conceived a novel microphone design based on capacitive read-out via comb structures, which is supposed to show a reduction in fluidic damping compared to conventional MEMS microphones. In order to evaluate the potential of the proposed design, we developed a fully energy-coupled, modular system-level model taking into account the mechanical motion, the slide film damping between the comb fingers, the acoustic impact of the package and the capacitive read-out. All submodels are physically based scaling with all relevant design parameters. We carried out noise analyses and due to the modular and physics-based character of the model, were able to discriminate the noise contributions of different parts of the microphone. This enables us to identify design variants of this concept which exhibit a SNR of up to 73 dB (A). This is superior to conventional and at least comparable to high-performance variants of the current state-of-the art MEMS microphones [2].

  10. Synthesis of Silicon Nitride and Silicon Carbide Nanocomposites through High Energy Milling of Waste Silica Fume for Structural Applications

    Science.gov (United States)

    Suri, Jyothi

    Nanocomposites have been widely used in a multitude of applications in electronics and structural components because of their improved mechanical, electrical, and magnetic properties. Silicon nitride/Silicon carbide (Si 3N4/SiC) nanocomposites have been studied intensively for low and high temperature structural applications, such as turbine and automobile engine components, ball bearings, turbochargers, as well as energy applications due to their superior wear resistance, high temperature strength, high oxidation resistance and good creep resistance. Silica fume is the waste material produced during the manufacture of silicon and ferro-silicon alloys, and contains 94 to 97 wt.% SiO2. In the present dissertation, the feasibility of using waste silica fume as the raw material was investigated to synthesize (I) advanced nanocomposites of Si3N4/SiC, and (2) porous silicon carbide (SiC) for membrane applications. The processing approach used to convert the waste material to advanced ceramic materials was based on a novel process called, integrated mechanical and thermal activation process (IMTA) process. In the first part of the dissertation, the effect of parameters such as carbothermic nitridation and reduction temperature and the graphite concentration in the starting silica fume plus graphite mixture, were explored to synthesize nanocomposite powders with tailored amounts of Si3N4 and SiC phases. An effective way to synthesize carbon-free Si3N 4/SiC composite powders was studied to provide a clear pathway and fundamental understanding of the reaction mechanisms. Si3N4/SiC nanocomposite powders were then sintered using two different approaches, based on liquid phase sintering and spark plasma sintering processes, with Al 2O3 and Y2O3 as the sintering aids. The nanocomposites were investigated for their densification behavior, microstructure, and mechanical properties. Si3N4/SiC nanocomposites thus obtained were found to possess superior mechanical properties at much

  11. Ultra-high-speed wavelength conversion in a silicon photonic chip

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Galili, Michael

    2011-01-01

    We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...

  12. Fully-depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holland, Stephen E.; Groom, Donald E.; Palaio, Nick P.; Stover, Richard J.; Wei, Mingzhi

    2002-03-28

    Charge-coupled devices (CCD's) have been fabricated on high-resistivity silicon. The resistivity, on the order of 10,000 {Omega}-cm, allows for depletion depths of several hundred microns. Fully-depleted, back-illuminated operation is achieved by the application of a bias voltage to a ohmic contact on the wafer back side consisting of a thin in-situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for good short wavelength response, while the relatively large depleted thickness results in good near-infrared response.

  13. Fabrication of novel AFM probe with high-aspect-ratio ultra-sharp three-face silicon nitride tips

    NARCIS (Netherlands)

    Vermeer, Rolf; Berenschot, Erwin; Sarajlic, Edin; Tas, Niels; Jansen, Henri

    2014-01-01

    In this paper we present the wafer-scale fabrication of molded AFM probes with high aspect ratio ultra-sharp three-plane silicon nitride tips. Using (111) silicon wafers a dedicated process is developed to fabricate molds in the silicon wafer that have a flat triangular bottom surface enclosed by th

  14. Evolution of arsenic in high fluence plasma immersion ion implanted silicon : Behavior of the as-implanted surface

    NARCIS (Netherlands)

    Vishwanath, V.; Demenev, E.; Giubertoni, D.; Vanzetti, L.; Koh, A. L.; Steinhauser, G.; Pepponi, G.; Bersani, M.; Meirer, F.; Foad, M. A.

    2015-01-01

    High fluence (>1015 ions/cm2) low-energy (3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon

  15. Evolution of arsenic in high fluence plasma immersion ion implanted silicon : Behavior of the as-implanted surface

    NARCIS (Netherlands)

    Vishwanath, V.; Demenev, E.; Giubertoni, D.; Vanzetti, L.; Koh, A. L.; Steinhauser, G.; Pepponi, G.; Bersani, M.; Meirer, F.; Foad, M. A.

    2015-01-01

    High fluence (>1015 ions/cm2) low-energy (3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon

  16. Quality assurance of high education

    Directory of Open Access Journals (Sweden)

    A. M. Aleksankov

    2016-01-01

    Full Text Available The article expounds questions concerning Quality assurance of Higher education, related to the entry of Russia into the united European Higher Education Area. The main emphases is focused on the necessity to create the system for Quality assurance of Russian Higher education, which will be harmonized with European systems. Comparing of Russian and European approaches in Quality assurance of Higher education is drawn. Russian system of Quality assurance of Higher education is considered on four levels: State level, level of Higher educational institution, level of society and international level; for each level the main elements of a system are determined. Since the European approach separates the Quality assurance system into two levels, e.g. internal and external, a conversion to comparable levels is being proposed. Characteristics of EURopean ACcredited Engineer (EUR-ACE Framework Standards are expounded. These Standards have been developed, fi rst of all, for facilitation of the procedure of acceptance of degrees and qualifi cations as well as Quality assurance of Study Programmes in European Higher Education Area. The comparison of requirements of Federal State Educational Standards for Higher education in Russian Federation and EUR-ACE Framework Standards is produced on the example of Masters’ Study programmes in Engineering. The comparison exposed similarities and, at the same time, considerable differences in examined approaches. So, the results of studies are formulated in different “coordinate systems”: according with kinds of activities in Federal State Educational Standards for Higher education, but according to the “cycle” of Engineering activity in EURACE Framework Standards. However, if the task for harmonization of standards (or requirements could be considered out of just simple coincidence between their structures and/or definitions and terms, than the principle contradictions between

  17. Image quality vs. radiation dose for a flat-panel amorphous silicon detector: a phantom study.

    Science.gov (United States)

    Geijer, H; Beckman, K W; Andersson, T; Persliden, J

    2001-01-01

    The aim of this study was to investigate the image quality for a flat-panel amorphous silicon detector at various radiation dose settings and to compare the results with storage phosphor plates and a screen-film system. A CDRAD 2.0 contrast-detail phantom was imaged with a flat-panel detector (Philips Medical Systems, Eindhoven, The Netherlands) at three different dose levels with settings for intravenous urography. The same phantom was imaged with storage phosphor plates at a simulated system speed of 200 and a screen-film system with a system speed of 160. Entrance surface doses were recorded for all images. At each setting, three images were read by four independent observers. The flat-panel detector had equal image quality at less than half the radiation dose compared with storage phosphor plates. The difference was even larger when compared with film with the flat-panel detector having equal image quality at approximately one-fifth the dose. The flat-panel detector has a very favourable combination of image quality vs radiation dose compared with storage phosphor plates and screen film.

  18. Image quality vs radiation dose for a flat-panel amorphous silicon detector: a phantom study

    Energy Technology Data Exchange (ETDEWEB)

    Geijer, H.; Andersson, T. [Dept. of Radiology, Oerebro Medical Centre Hospital (Sweden); Beckman, K.W.; Persliden, J. [Dept. of Medical Physics, Oerebro Medical Centre Hospital (Sweden)

    2001-09-01

    The aim of this study was to investigate the image quality for a flat-panel amorphous silicon detector at various radiation dose settings and to compare the results with storage phosphor plates and a screen-film system. A CDRAD 2.0 contrast-detail phantom was imaged with a flat-panel detector (Philips Medical Systems, Eindhoven, The Netherlands) at three different dose levels with settings for intravenous urography. The same phantom was imaged with storage phosphor plates at a simulated system speed of 200 and a screen-film system with a system speed of 160. Entrance surface doses were recorded for all images. At each setting, three images were read by four independent observers. The flat-panel detector had equal image quality at less than half the radiation dose compared with storage phosphor plates. The difference was even larger when compared with film with the flat-panel detector having equal image quality at approximately one-fifth the dose. The flat-panel detector has a very favourable combination of image quality vs radiation dose compared with storage phosphor plates and screen film. (orig.)

  19. Thin film reactions on silicon surfaces and the quality of metal-semiconductor interfaces

    Science.gov (United States)

    Morgen, P.; Jørgensen, B.; Rasmussen, J.; Labunov, V. A.; Nylandsted Larsen, A.

    1986-03-01

    We have studied the formation of thin silicide layers on silicon surfaces by thermal treatments of thin evaporated metal films. Examples are given for Pt/Si, V/Si, and Ti/Si. The treatments studied were vacuum furnace annealing, electron-beam annealing, and xenon lamp illumination. The compositional depth profiles of the resulting structures were analyzed with RBS and Auger/ sputter profiling. Impurities, oxygen and carbon, are present in Ti and V before annealing, and may also become incorporated during the treatment. Thus the quality of the annealing procedures depends strongly on the thermodynamics of the ternary or quarternary mixtures of metal, silicon and impurities. Best results, in terms of silicide homogeneity, purity, and interface sharpness (epitaxy) were obtained for PtSi, xenon lamp annealed for very short times. Also for V and Ti, rapid thermal annealing was found to produce much better structures than vacuum furnace annealing. The influence of oxygen in the systems studied is discussed in terms of ternary phase diagrams.

  20. A bonding study toward the quality assurance of Belle-II silicon vertex detector modules

    Energy Technology Data Exchange (ETDEWEB)

    Kang, K.H.; Jeon, H.B. [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Park, H., E-mail: sunshine@knu.ac.kr [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Uozumi, S. [RSRI, Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, T. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); and others

    2016-09-21

    A silicon vertex detector (SVD) for the Belle-II experiment comprises four layers of double-sided silicon strip detectors (DSSDs), assembled in a ladder-like structure. Each ladder module of the outermost SVD layer has four rectangular and one trapezoidal DSSDs supported by two carbon-fiber ribs. In order to achieve a good signal-to-noise ratio and minimize material budget, a novel chip-on-sensor “Origami” method has been employed for the three rectangular sensors that are sandwiched between the backward rectangular and forward (slanted) trapezoidal sensors. This paper describes the bonding procedures developed for making electrical connections between sensors and signal fan-out flex circuits (i.e., pitch adapters), and between pitch adapters and readout chips as well as the results in terms of the achieved bonding quality and pull force. - Highlights: • Gluing and wire binding for Belle-II SVD are studied. • Gluing robot and Origami module are used. • QA are satisfied in terms of the achieved bonding throughput and the pull force. • Result will be applied for L6 ladder assembly.

  1. Research on the Fe-silicon nitride material self-producing N2 at high temperature

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The Fe-silicon nitride synthesized by flashing combustion process was studied to determine the reaction temperature between Fe and silicon nitride, the account of N2 given out in the course of the reaction, and the change of the microstructure during calcination. The results showed that at 1127.2℃ the Fe-silicon nitride self-reacts and releases N2 and under 101.3 kPa the volume of N2 given out in the course of the reaction is 20 times more than that of the starting material. N2 is produced quickly, and completes in several decade seconds. With the producing of N2, the structure of Silicon Nitride around Fe becomes loose and porous, or cracks are formed by the reaction between Fe and silicon nitride. So if it is made use of that Fe-silicon nitride self-producing N2 at the high temperature, the performance of the material on a base of Fe-silicon nitride could be greatly improved.

  2. High temperature mechanical performance of a hot isostatically pressed silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

    1996-01-01

    Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

  3. Surface-Decorated Silicon Nanowires: A Route to High-ZT Thermoelectrics

    DEFF Research Database (Denmark)

    Markussen, Troels; Jauho, Antti-Pekka; Brandbyge, Mads

    2009-01-01

    Based on atomistic calculations of electron and phonon transport, we propose to use surface-decorated silicon nanowires for thermoelectric applications. Two examples of surface decorations are studied to illustrate the underlying ideas: nanotrees and alkyl functionalized silicon nanowires. For both...... systems we find (i) that the phonon conductance is significantly reduced compared to the electronic conductance leading to high thermoelectric figure of merit ZT, and (ii) for ultrathin wires, surface decoration leads to significantly better performance than surface disorder....

  4. High-efficient n-i-p thin-film silicon solar cells

    NARCIS (Netherlands)

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar

  5. A high-Tc superconductor bolometer on a silicon nitride membrane

    NARCIS (Netherlands)

    Sánchez, S.; Elwenspoek, M.C.; Gui, C.; Nivelle, de M.J.M.E.; Vries, de R.J.; Korte, de P.A.J.; Bruijn, M.P.; Wijnbergen, J.J.; Michalke, W.; Steinbeiss, E.; Heidenblut, T.; Schwierzi, B.

    1997-01-01

    In this paper we describe the design, fabrication and performance of a high-Tc GdBa2Cu3O7-δ superconductor bolometer positioned on a 2×2 mm2, 1 μm thick silicon nitride membrane. The bolometer structure has an effective area of 0.64 mm2, and was grown on a specially developed Silicon-On-Nitride laye

  6. High-efficient n-i-p thin-film silicon solar cells

    NARCIS (Netherlands)

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar

  7. High Temperature Oxidation and Mechanical properties of Silicon Nitride.

    Science.gov (United States)

    1980-11-30

    Rowcliffe, and R. H. Lamoreaux Prepared for: Air Force Office of Scientific Research/NE Building 410 Boiling Air Force Base, D.C. 20332 Attention: Captain...samples were examined by x-ray dif- fraction. Cristobalite and a-Si 3N4 lines were found, but there was no evidence of silicon oxynitride. In most... cristobalite is the stable form.𔃾 A large amount of evi- dence indicates that this phase transiticn was not the primary reason for the increased

  8. Bread board float zone experiment system for high purity silicon

    Science.gov (United States)

    Kern, E. L.; Gill, G. L., Jr.

    1982-01-01

    A breadboard float zone experimental system has been established at Westech Systems for use by NASA in the float zone experimental area. A used zoner of suitable size and flexibility was acquired and installed with the necessary utilities. Repairs, alignments and modifications were made to provide for dislocation free zoning of silicon. The zoner is capable of studying process parameters used in growing silicon in gravity and is flexible to allow trying of new features that will test concepts of zoning in microgravity. Characterizing the state of the art molten zones of a growing silicon crystal will establish the data base against which improvements of zoning in gravity or growing in microgravity can be compared. 25 mm diameter was chosen as the reference size, since growth in microgravity will be at that diameter or smaller for about the next 6 years. Dislocation free crystals were growtn in the 100 and 111 orientations, using a wide set of growth conditions. The zone shape at one set of conditions was measured, by simultaneously aluminum doping and freezing the zone, lengthwise slabbing and delineating by etching. The whole set of crystals, grown under various conditions, were slabbed, polished and striation etched, revealing the growth interface shape and the periodic and aperiodic natures of the striations.

  9. High dynamic range, hyper-terahertz detection with silicon photoconductors

    Science.gov (United States)

    Muir, A. C.; Hussain, A.; Andrews, S. R.

    2016-06-01

    The frequency response of ion implanted silicon photoconductive devices designed for coherent detection in time domain terahertz spectroscopy has been studied between 0.2 and 30 THz. Unlike devices using polar photoconductors or ones having polar substrates, which have a complicated response spectrum in the region of their reststrahlen bands, the response of silicon detectors fabricated on silicon substrates is relatively featureless. When used with amplified laser systems, the dynamic range of Si detectors is shown to be very similar to that of GaAs devices with the same geometry over a 20 THz range, superior to air-biased coherent detection (ABCD) at frequencies below ˜7 THz and comparable with both ABCD and electro-optic sampling in thin ZnTe crystals between 7 and 20 THz. Together with their ease of use and linear response in terahertz fields approaching 1 MV/cm, this suggests that Si photoconductors could be a competitive choice for sensitive detection in nonlinear hyper-terahertz spectroscopy.

  10. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  11. Modeling the splitting of thin silicon films from porosified crystalline silicon upon high temperature annealing in hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Ghannam, Moustafa Y.; Raheem, Yaser Abdul; Alomar, Abdul Azeez [EE Department, College of Engineering and Petroleum, Kuwait University, Safat (Kuwait); Poortmans, Jef [IMEC, Leuven (Belgium)

    2012-10-15

    The role of hydrogen in promoting thin film splitting from crystalline silicon wafers with pores or trenches during high temperature annealing is investigated. During the treatment, trenches are transformed into spherical voids that may laterally channel and split off the substrate. It is shown that the conditions necessary for hydrogen to contribute to the establishment of high stress levels around transformed voids or of pressure inside the voids are usually not satisfied. Hence promoting void coalescence by substantial void volume growth resulting from stress enhanced vacancy diffusion and/or exfoliation of separated voids are unlikely to occur. Also, there are no experimental evidence that confirms the role of hydrogen in triggering premature void collapse by Griffith fracture at relatively lower stress levels in conjunction with reduced surface energy. Therefore, it is concluded that splitting occurs during high temperature annealing only when neighboring voids are close enough to systematically coalesce. In that case, hydrogen may react at high temperature with the internal silicon surface of the voids (walls) and contribute to breaking the thin straps separating the voids which promotes channelling and film splitting (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Fast High-Quality Noise

    DEFF Research Database (Denmark)

    Frisvad, Jeppe Revall; Wyvill, Geoff

    2007-01-01

    At the moment the noise functions available in a graphics programmer's toolbox are either slow to compute or they involve grid-line artifacts making them of lower quality. In this paper we present a real-time noise computation with no grid-line artifacts or other regularity problems. In other wor...

  13. High efficiency photoluminescence from silicon nanocrystals prepared by plasma synthesis and organic surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Mangolini, L.; Kortshagen, U. [Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Jurbergs, D.; Rogojina, E. [Innovalight Inc., 3303 Octavius Drive Suite 104, Santa Clara, CA 95054 (United States)

    2006-07-01

    An efficient synthesis route for highly luminescent silicon quantum dots is presented. Silicon nanocrystals were synthesized in the gas phase using an argon-silane non-thermal plasma in a continuous flow reactor. Liquid phase surface passivation was used to improve the optical properties and avoid surface oxidation of the silicon quantum dots. Various alkenes, such as octadecene, dodecene and styrene, were covalently bonded to the plasma-produced particles, while strictly avoiding exposure of the raw powder to oxidizing agents. Stable colloidal solutions of silicon quantum dots with ensemble quantum yields between 60% and 70% were achieved. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

    Science.gov (United States)

    Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

    1987-02-01

    A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

  15. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2010-02-15

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  16. Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

    Science.gov (United States)

    Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

    2014-10-28

    Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

  17. Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

    Directory of Open Access Journals (Sweden)

    P. Borowicz

    2013-01-01

    Full Text Available Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high-κ dielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide. The temperature treatment of hafnium oxide shows the evolution of the structure of this material. Raman spectra recorded for as-deposited hafnium oxide are similar to the results obtained for silicon dioxide layer. After thermal treatment especially at higher temperatures (600°C and above, the structure of hafnium oxide becomes similar to the bulk non-densified silicon dioxide.

  18. High Performance Optical Waveguides based on Boron and Phosphorous doped Silicon Oxynitride

    NARCIS (Netherlands)

    Sun, F.; Driessen, A.; Worhoff, Kerstin; Broquin, Jean-Emmanuel; Greiner, Christoph M.

    2010-01-01

    Silicon oxynitride (SiON) is a highly attractive material for integrated optics, due to its excellent properties such as high transparency, adjustable refractive index and good stability. In general, the growth of SiON layers by plasma enhanced chemical vapor deposition (PECVD) is followed by a high

  19. High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

    Science.gov (United States)

    Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

    2014-01-01

    A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

  20. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

    CERN Document Server

    Shiue, Ren-Jye; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dimitri; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-01-01

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photorespo...

  1. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

    Science.gov (United States)

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  2. High Quality Factor Fano-Resonant All-Dielectric Metamaterials

    CERN Document Server

    Yang, Yuanmu; Briggs, Dayrl P; Valentine, Jason

    2014-01-01

    Fano-resonant plasmonic metamaterials and nanostructures have become a major focus of the nanophotonics fields over the past several years due their ability to produce high quality factor (Q-factor) resonances. The origin of such resonances is the interference between a broad and narrow resonance, ultimately allowing suppression of radiative damping. However, Fano-resonant plasmonic structures still suffer non-radiative damping due to Ohmic loss, ultimately limiting the achievable Q-factors to values less than 10. Here, we report experimental demonstration of Fano-resonant silicon-based metamaterials that have a response that mimics the electromagnetically induced transparency (EIT) found in atomic systems. Due to extremely low absorption loss, a record-high Q-factor of 306 was experimentally observed. Furthermore, the unit cell of the metamaterial was designed with a feed-gap which results in strong local field enhancement in the surrounding medium resulting in strong light-matter interaction. This allows th...

  3. Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

    Energy Technology Data Exchange (ETDEWEB)

    Knoops, Harm C. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Oxford Instruments Plasma Technology, North End, Bristol BS49 4AP (United Kingdom); Peuter, K. de; Kessels, W. M. M., E-mail: h.c.m.knoops@tue.nl, E-mail: w.m.m.kessels@tue.nl [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2015-07-06

    The requirements on the material properties and growth control of silicon nitride (SiN{sub x}) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD). However, depositing SiN{sub x} by ALD has turned out to be very challenging. In this work, it is shown that the plasma gas residence time τ is a key parameter for the deposition of SiN{sub x} by plasma-assisted ALD and that this parameter can be linked to a so-called “redeposition effect”. This previously ignored effect, which takes place during the plasma step, is the dissociation of reaction products in the plasma and the subsequent redeposition of reaction-product fragments on the surface. For SiN{sub x} ALD using SiH{sub 2}(NH{sup t}Bu){sub 2} as precursor and N{sub 2} plasma as reactant, the gas residence time τ was found to determine both SiN{sub x} film quality and the resulting growth per cycle. It is shown that redeposition can be minimized by using a short residence time resulting in high-quality films with a high wet-etch resistance (i.e., a wet-etch rate of 0.5 nm/min in buffered HF solution). Due to the fundamental nature of the redeposition effect, it is expected to play a role in many more plasma-assisted ALD processes.

  4. In situ transmission infrared spectroscopy of high-kappa oxide atomic layer deposition onto silicon surfaces

    Science.gov (United States)

    Ho, Ming-Tsung

    -H...Hf interactions or by the dielectric screening effect of as-grown high-kappa moiety. A summary of local bonding models with vibrational mode assignments of the adsorbed TMA and TEMAH on silicon surfaces is presented based on the analysis of the substructure of silicate interfacial band at 900--1100 cm-1.

  5. Interfacial Engineering of Silicon Carbide Nanowire/Cellulose Microcrystal Paper toward High Thermal Conductivity.

    Science.gov (United States)

    Yao, Yimin; Zeng, Xiaoliang; Pan, Guiran; Sun, Jiajia; Hu, Jiantao; Huang, Yun; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

    2016-11-16

    Polymer composites with high thermal conductivity have attracted much attention, along with the rapid development of electronic devices toward higher speed and better performance. However, high interfacial thermal resistance between fillers and matrix or between fillers and fillers has been one of the primary bottlenecks for the effective thermal conduction in polymer composites. Herein, we report on engineering interfacial structure of silicon carbide nanowire/cellulose microcrystal paper by generating silver nanostructures. We show that silver nanoparticle-deposited silicon carbide nanowires as fillers can effectively enhance the thermal conductivity of the matrix. The in-plane thermal conductivity of the resultant composite paper reaches as high as 34.0 W/m K, which is one order magnitude higher than that of conventional polymer composites. Fitting the measured thermal conductivity with theoretical models qualitatively demonstrates that silver nanoparticles bring the lower interfacial thermal resistances both at silicon carbide nanowire/cellulose microcrystal and silicon carbide nanowire/silicon carbide nanowire interfaces. This interfacial engineering approach provides a powerful tool for sophisticated fabrication of high-performance thermal-management materials.

  6. High Temperature Joining and Characterization of Joint Properties in Silicon Carbide-Based Composite Materials

    Science.gov (United States)

    Halbig, Michael C.; Singh, Mrityunjay

    2015-01-01

    Advanced silicon carbide-based ceramics and composites are being developed for a wide variety of high temperature extreme environment applications. Robust high temperature joining and integration technologies are enabling for the fabrication and manufacturing of large and complex shaped components. The development of a new joining approach called SET (Single-step Elevated Temperature) joining will be described along with the overview of previously developed joining approaches including high temperature brazing, ARCJoinT (Affordable, Robust Ceramic Joining Technology), diffusion bonding, and REABOND (Refractory Eutectic Assisted Bonding). Unlike other approaches, SET joining does not have any lower temperature phases and will therefore have a use temperature above 1315C. Optimization of the composition for full conversion to silicon carbide will be discussed. The goal is to find a composition with no remaining carbon or free silicon. Green tape interlayers were developed for joining. Microstructural analysis and preliminary mechanical tests of the joints will be presented.

  7. Graphene oxide-immobilized NH₂-terminated silicon nanoparticles by cross-linked interactions for highly stable silicon negative electrodes.

    Science.gov (United States)

    Sun, Cheng; Deng, Yuanfu; Wan, Lina; Qin, Xusong; Chen, Guohua

    2014-07-23

    There is a great interest in the utilization of silicon-based anodes for lithium-ion batteries. However, its poor cycling stability, which is caused by a dramatic volume change during lithium-ion intercalation, and intrinsic low electric conductivity hamper its industrial applications. A facile strategy is reported here to fabricate graphene oxide-immobilized NH2-terminated silicon nanoparticles (NPs) negative electrode (Si@NH2/GO) directed by hydrogen bonding and cross-linked interactions to enhance the capacity retention of the anode. The NH2-modified Si NPs first form strong hydrogen bonds and covalent bonds with GO. The Si@NH2/GO composite further forms hydrogen bonds and covalent bonds with sodium alginate, which acts as a binder, to yield a stable composite negative electrode. These two chemical cross-linked/hydrogen bonding interactions-one between NH2-modified Si NPs and GO, and another between the GO and sodium alginate-along with highly mechanically flexible graphene oxide, produced a robust network in the negative electrode system to stabilize the electrode during discharge and charge cycles. The as-prepared Si@NH2/GO electrode exhibits an outstanding capacity retention capability and good rate performance, delivering a reversible capacity of 1000 mAh g(-1) after 400 cycles at a current of 420 mA g(-1) with almost 100% capacity retention. The results indicated the importance of system-level strategy for fabricating stable electrodes with improved electrochemical performance.

  8. Scalable synthesis of silicon-nanolayer-embedded graphite for high-energy lithium-ion batteries

    Science.gov (United States)

    Ko, Minseong; Chae, Sujong; Ma, Jiyoung; Kim, Namhyung; Lee, Hyun-Wook; Cui, Yi; Cho, Jaephil

    2016-09-01

    Existing anode technologies are approaching their limits, and silicon is recognized as a potential alternative due to its high specific capacity and abundance. However, to date the commercial use of silicon has not satisfied electrode calendering with limited binder content comparable to commercial graphite anodes for high energy density. Here we demonstrate the feasibility of a next-generation hybrid anode using silicon-nanolayer-embedded graphite/carbon. This architecture allows compatibility between silicon and natural graphite and addresses the issues of severe side reactions caused by structural failure of crumbled graphite dust and uncombined residue of silicon particles by conventional mechanical milling. This structure shows a high first-cycle Coulombic efficiency (92%) and a rapid increase of the Coulombic efficiency to 99.5% after only 6 cycles with a capacity retention of 96% after 100 cycles, with an industrial electrode density of >1.6 g cm-3, areal capacity loading of >3.3 mAh cm-2, and <4 wt% binding materials in a slurry. As a result, a full cell using LiCoO2 has demonstrated a higher energy density (1,043 Wh l-1) than with standard commercial graphite electrodes.

  9. Automated silicon module assembly for the CMS silicon tracker

    CERN Document Server

    Surrow, B

    2001-01-01

    The CMS silicon tracker requires the assembly of about 20000 individual silicon detector modules. To ensure the assembly of such an amount with high, reproducible quality, an automated procedure has been developed for module assembly based on a high-precision robotic positioning machine. This procedure allows a much higher throughput and will result in much reduced manpower requirements than for traditional manual techniques. (1 refs).

  10. High surface area silicon carbide-coated carbon aerogel

    Science.gov (United States)

    Worsley, Marcus A; Kuntz, Joshua D; Baumann, Theodore F; Satcher, Jr, Joe H

    2014-01-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicone carbide, improved the thermal stability of the carbon aerogel.

  11. Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density

    Science.gov (United States)

    Son, In Hyuk; Hwan Park, Jong; Kwon, Soonchul; Park, Seongyong; Rümmeli, Mark H.; Bachmatiuk, Alicja; Song, Hyun Jae; Ku, Junhwan; Choi, Jang Wook; Choi, Jae-man; Doo, Seok-Gwang; Chang, Hyuk

    2015-01-01

    Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge–discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l−1 at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology. PMID:26109057

  12. Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density.

    Science.gov (United States)

    Son, In Hyuk; Hwan Park, Jong; Kwon, Soonchul; Park, Seongyong; Rümmeli, Mark H; Bachmatiuk, Alicja; Song, Hyun Jae; Ku, Junhwan; Choi, Jang Wook; Choi, Jae-Man; Doo, Seok-Gwang; Chang, Hyuk

    2015-06-25

    Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge-discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l(-1) at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology.

  13. High-Performance, High-Index-Contrast Chalcogenide Glass Photonics on Silicon and Unconventional Non-planar Substrates

    CERN Document Server

    Zou, Yi; Lin, Hongtao; Li, Lan; Moreel, Loise; Zhou, Jie; Du, Qingyang; Ogbuu, Okechukwu; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Dobson, Kevin D; Birkmire, Robert; Hu, Juejun

    2013-01-01

    This paper reports a versatile, roll-to-roll and backend compatible technique for the fabrication of high-index-contrast photonic structures on both silicon and plastic substrates. The fabrication technique combines low-temperature chalcogenide glass film deposition and resist-free single-step thermal nanoimprint to process low-loss (1.6 dB/cm), sub-micron single-mode waveguides with a smooth surface finish using simple contact photolithography. Using this approach, the first chalcogenide glass micro-ring resonators are fabricated by thermal nanoimprint. The devices exhibit an ultra-high quality-factor of 400,000 near 1550 nm wavelength, which represents the highest value reported in chalcogenide glass micro-ring resonators. Furthermore, sub-micron nanoimprint of chalcogenide glass films on non-planar plastic substrates is demonstrated, which establishes the method as a facile route for monolithic fabrication of high-index-contrast devices on a wide array of unconventional substrates.

  14. Fundamental understanding and development of low-cost, high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

    2000-05-01

    The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

  15. Radiation-hard silicon photonics for high energy physics and beyond

    CERN Document Server

    CERN. Geneva

    2016-01-01

    Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

  16. A new Design for an High Gain Vacuum Photomultiplier: The Silicon PMT Used as Amplification Stage

    Energy Technology Data Exchange (ETDEWEB)

    Barbarino, Giancarlo [Universita di Napoli ' Federico II' , Dipartimento di Scienze fisiche, via Cintia 80126 Napoli (Italy); Asmundis, Riccardo de; De Rosa, Gianfranca [Istituto Nazionale di fisica Nucleare, sezione di Napoli, Complesso di Monte S. Angelo Ed. 6, via Cintia 80126 Napoli (Italy); Fiorillo, Giuliana; Russo, Stefano [Universita di Napoli ' Federico II' , Dipartimento di Scienze fisiche, via Cintia 80126 Napoli (Italy)

    2009-12-15

    Photons detection will continue to be a channel of great interest in the High Energy Physics and Astroparticle Physics fields for medium and big scale experiments in the next future. Thus, new solutions for photon detectors, that overcome the current limits of classical photomultipliers, are welcomed. We propose an innovative design for a hybrid, modern, high gain Vacuum Silicon Photomultiplier Tube (VSiPMT) which is boosted by the recent Geiger-mode avalanche silicon photodiode (G-APD) for which a massive production is today available.

  17. Quality management manual for production of high quality cassava flour

    DEFF Research Database (Denmark)

    Dziedzoave, Nanam Tay; Abass, Adebayo Busura; Amoa-Awua, Wisdom K.

    The high quality cassava flour (HQCF) industry has just started to evolve in Africa and elsewhere. The sustainability of the growing industry, the profitability of small- and medium-scale enterprises (SMEs) that are active in the industry and good-health of consumers can best be guaranteed through...... the adoption of proper quality and food safety procedures. Cassava processing enterprises involved in the productionof HQCF must therefore be commited to the quality and food safety of the HQCF. They must have the right technology, appropriate processing machhinery, standard testing instruments...... and the necessary technical expertise. This quality manual was therefore developed to guide small- to medium-scale cassava in the design and implematation of Hazard Analysis Critical Control Point (HACCP) system and Good manufacturing Practices (GMP) plans for HQCF production. It describes the HQCF production...

  18. Effects of pressure and inter-electrode distance on deposition of nanocrystalline silicon under high pressure conditions

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yanchao; Verkerk, Arjan D.; Rath, Jatindra K.; Schropp, Ruud E.I. [Debye Institute for Nanomaterials Science, Section Nanophotonics - Physics of Devices, Faculty of Science, Utrecht University (Netherlands); Goedheer, Wim J. [FOM-Institute for Plasma Physics, Nieuwegein (Netherlands)

    2010-04-15

    Pressure (p) and inter-electrode distance (d) are important parameters in the process of depositing hydrogenated nanocrystalline silicon (nc-Si:H) by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD). High quality nc-Si:H materials are normally deposited at high pressure (1 mbar < p < 7 mbar). However, systematic research on the combined effects of p and d is rare. In order to optimize nc-Si:H for solar cells, such effects are investigated for a silane-hydrogen discharge at high pressure conditions. All nc-Si:H layers were deposited at fixed hydrogen dilution ratio (H{sub 2}/SiH{sub 4}), power and frequency. With optical emission spectroscopy, direct images taken by a photo camera and by 1D SiH{sub 4}/H{sub 2} plasma simulation, three different series were analyzed to study the combined effects of p and d at high pressure. The effects on the crystalline ratio and the porosity of the deposited silicon layers were also investigated. When the p .d product is constant, the plasma sheath becomes relatively thinner when d increases. When p or d increases independently, the electron density decreases. All the above modifications can increase the deposition rate, but by different mechanisms. When nc-Si:H is deposited at a p.d product of 30 mbar.mm, compact material with high crystalline ratio is obtained (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. The 7 Qualities of Highly Secure Software

    CERN Document Server

    Paul, Mano

    2012-01-01

    The 7 Qualities of Highly Secure Software provides a framework for designing, developing, and deploying hacker-resilient software. It uses engaging anecdotes and analogies-ranging from Aesop's fables, athletics, architecture, biology, nursery rhymes, and video games-to illustrate the qualities that are essential for the development of highly secure software. Each chapter details one of the seven qualities that can make your software highly secure and less susceptible to hacker threats. Leveraging real-world experiences and examples, the book: Explains complex security concepts in language that

  20. Hierarchical columnar silicon anode structures for high energy density lithium sulfur batteries

    Science.gov (United States)

    Piwko, Markus; Kuntze, Thomas; Winkler, Sebastian; Straach, Steffen; Härtel, Paul; Althues, Holger; Kaskel, Stefan

    2017-05-01

    Silicon is a promising anode material for next generation lithium secondary batteries. To significantly increase the energy density of state of the art batteries with silicon, new concepts have to be developed and electrode structuring will become a key technology. Structuring is essential to reduce the macroscopic and microscopic electrode deformation, caused by the volume change during cycling. We report pulsed laser structuring for the generation of hierarchical columnar silicon films with outstanding high areal capacities up to 7.5 mAh cm-2 and good capacity retention. Unstructured columnar electrodes form a micron-sized block structure during the first cycle to compensate the volume expansion leading to macroscopic electrode deformation. At increased silicon loading, without additional structuring, pronounced distortion and the formation of cracks through the current collector causes cell failure. Pulsed laser ablation instead is demonstrated to avoid macroscopic electrode deformation by initial formation of the block structure. A full cell with lithiated silicon versus a carbon-sulfur cathode is assembled with only 15% overbalanced anode and low electrolyte amount (8 μl mgsulfur-1). While the capacity retention over 50 cycles is identical to a cell with high excess lithium anode, the volumetric energy density could be increased by 30%.

  1. A modified approach to actively remove high viscosity silicone oil through 23-gauge cannula.

    Science.gov (United States)

    Song, Zong-Ming; Hu, Xu-Ting; Wang, Lei; Hu, Zhi-Xiang; Zhao, Pei-Quan; Chen, Ding

    2016-01-01

    To report a simple approach to actively remove high viscosity silicone oil through a 23-gauge cannula via pars plana. Forty-eight eyes of 48 patients underwent silicone oil (5700 centistokes) removal (SOR) were enrolled. A section of blood transfusion set was prepared to connect a standard 23-gauge cannula and vitrectomy machine. Silicone oil was removed with suction of 500-mm Hg vacuum through the cannula. Main outcome measures were SOR duration, number of sutured sites, intraocular pressure (IOP), best-corrected visual acuity (BCVA), and complications. Silicone oil was successfully removed in all cases. The mean SOR time was 5.70±0.85min. Nine eyes (18.75%) needed suture partial sclerotomies. No intraoperative complications were noted. Transient hypotony (≤8 mm Hg) was seen in 3 eyes (6.25%) on postoperative day 1, but all resolved within 1wk. Retinal reattachment was achieved in all cases and no other postoperative complications were noted during 3-month following-up. BCVA at the final visit improved or stabilized in all patients comparing to the preoperative level. Active removal of high viscosity silicone oil through a 23-gauge instrument cannula jointed with blood transfusion set is a practical and reliable technique when considering two sides of efficacy and safety.

  2. Novel Ag-doped glass frits for high-efficiency crystalline silicon solar cells.

    Science.gov (United States)

    Yuan, Sheng; Chen, Yongji; Mei, Zongwei; Zhang, Ming-Jian; Gao, Zhou; Wang, Xingbo; Jiang, Xing; Pan, Feng

    2017-06-06

    Glass frits play an important role in the front contact electrodes of crystalline silicon (c-Si) solar cells. In this work, we developed a novel glass frit by doping Ag into a glass frit in the process of high-temperature synthesis. When the Ag paste including this novel glass frit was used as the front contact electrode of silicon solar cells, the conversion efficiency of poly-crystalline silicon (pc-Si) solar cells was improved by 1.9% compared to the glass frit without Ag. Through SEM characterisation and calculation of series resistance, we further found that the interface between Ag and Si was improved and the contact resistance of Ag and Si was greatly reduced, which were believed to be responsible for the improvement of solar cell performance. This work shows great guidance significance to develop novel and highly efficient commercial glass frits applied in solar cells in the future.

  3. An Investigation of High Performance Heterojunction Silicon Solar Cell Based on n-type Si Substrate

    Directory of Open Access Journals (Sweden)

    N. Memarian

    2016-12-01

    Full Text Available In this study, high efficient heterojunction crystalline silicon solar cells without using an intrinsic layer were systematically investigated. The effect of various parameters such as work function of transparent conductive oxide (ϕTCO, density of interface defects, emitter and crystalline silicon thickness on heterojunction silicon solar cell performance was studied. In addition, the effect of band bending and internal electric field on solar cell performance together with the dependency of cell performance on work function and reflectance of the back contact were investigated in full details. The optimum values of the solar cell properties for the highest efficiency are presented based on the results of the current study. The results represent a complete set of optimum values for a heterojunction solar cell with high efficiency up to the 24.1 % with VOC  0.87 V and JSC  32.69 mAcm – 2.

  4. High-density G-centers, light-emitting point defects in silicon crystal

    Directory of Open Access Journals (Sweden)

    Koichi Murata

    2011-09-01

    Full Text Available We propose a new method of creating light-emitting point defects, or G-centers, by modifying a silicon surface with hexamethyldisilazane followed by laser annealing of the surface region. This laser annealing process has two advantages: creation of highly dense G-centers by incorporating carbon atoms into the silicon during heating; freezing in the created G-centers during rapid cooling. The method provides a surface region of up to 200 nm with highly dense carbon atoms of up to 4 × 1019 cm−3 to create G-centers, above the solubility limit of carbon atoms in silicon crystal (3 × 1017 cm−3. Photoluminescence measurement reveals that the higher-speed laser annealing produces stronger G-center luminescence. We demonstrate electrically-driven emission from the G-centers in samples made using our new method.

  5. High-pressure synthesis at the origin of new developments in silicon clathrate physical chemistry

    CERN Document Server

    Reny, E; Cros, C; Pouchard, M

    2002-01-01

    Since their discovery in 1965, various compositions of clathrate phases of silicon have been investigated and have revealed a direct correlation between the doping element and their properties. The recent development of a new synthesis technique using high-pressure and high-temperature (HPHT) conditions allows the synthesis of peculiar clathrate compositions which can show fascinating properties, such as Ba sub 8 Si sub 4 sub 6 which is a sp sup 3 silicon-based structure with superconducting characteristics. This work reports the synthesis of the first binary silicon clathrate doped with an electronegative element and prepared using HPHT: I sub 8 Si sub 4 sub 6 sub sub - sub x I sub x. Some chemical and structural results are also presented.

  6. High-pressure synthesis at the origin of new developments in silicon clathrate physical chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Reny, Edouard [Department of Applied Chemistry, Faculty of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan); Yamanaka, S [Department of Applied Chemistry, Faculty of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan); Cros, C [Institut de Chimie de la Matiere Condensee de Bordeaux, UPR/CNRS 9048, 33608 Pessac (France); Pouchard, M [Institut de Chimie de la Matiere Condensee de Bordeaux, UPR/CNRS 9048, 33608 Pessac (France)

    2002-11-11

    Since their discovery in 1965, various compositions of clathrate phases of silicon have been investigated and have revealed a direct correlation between the doping element and their properties. The recent development of a new synthesis technique using high-pressure and high-temperature (HPHT) conditions allows the synthesis of peculiar clathrate compositions which can show fascinating properties, such as Ba{sub 8}Si{sub 46} which is a sp{sup 3} silicon-based structure with superconducting characteristics. This work reports the synthesis of the first binary silicon clathrate doped with an electronegative element and prepared using HPHT: I{sub 8}Si{sub 46-x}I{sub x}. Some chemical and structural results are also presented.

  7. Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures

    Energy Technology Data Exchange (ETDEWEB)

    Galperin, V. A.; Kitsyuk, E. P. [“Technological Center” Research-and-Production Company (Russian Federation); Pavlov, A. A. [Russian Academy of Sciences, Institute of Nanotechnologies in Microelectronics (Russian Federation); Shamanaev, A. A., E-mail: artemiy.shamanaev@tcen.ru [“Technological Center” Research-and-Production Company (Russian Federation)

    2015-12-15

    New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.

  8. Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-02-01

    A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.

  9. High Reflectance Silicon Dielectric Mirrors for Infrared Astronomy Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Conventional high reflectance optical coatings consisting of multilayer stacks of alternating high and low refractive index dielectric materials can achieve high...

  10. One step lithography-less silicon nanomanufacturing for low cost high-efficiency solar cell production

    Science.gov (United States)

    Chen, Yi; Liu, Logan

    2014-03-01

    To improve light absorption, previously various antireflection material layers were created on solar wafer surface including multilayer dielectric film, nanoparticle sludges, microtextures, noble metal plasmonic nanoparticles and 3D silicon nanostructure arrays. All of these approaches involve nanoscale prepatterning, surface-area-sensitive assembly processes or extreme fabrication conditions; therefore, they are often limited by the associated high cost and low yield as well as the consequent industry incompatibility. In comparison, our nanomanufacturing, an unique synchronized and simultaneous top-down and bottom-up nanofabrication approach called simultaneous plasma enhanced reactive ion synthesis and etching (SPERISE), offers a better antireflection solution along with the potential to increase p-n junction surface area. High density and high aspect ratio anechoic nanocone arrays are repeatedly and reliably created on the entire surface of single and poly crystalline silicon wafers as well as amorphous silicon thin films within 5 minutes under room temperature. The nanocone surface had lower than 5% reflection over the entire solar spectrum and a desirable omnidirectional absorption property. Using the nanotextured solar wafer, a 156mm × 156mm 18.1%-efficient black silicon solar cell was fabricated, which was an 18.3% enhancement over the cell fabricated by standard industrial processes. This process also reduces silicon loss during the texturing step and enables tighter process control by creating more uniform surface structures. Considering all the above advantages, the demonstrated nanomanufacturing process can be readily translated into current industrial silicon solar cell fabrication lines to replace the costly and ineffective wet chemical texturing and antireflective coatings.

  11. High temperature C/C–SiC composite by liquid silicon infiltration: a literature review

    Indian Academy of Sciences (India)

    Manish Patel; Kumar Saurabh; V V Bhanu Prasad; J Subrahmanyam

    2012-02-01

    The ceramic matrix carbon fibre (CMC) reinforced composite has received great attention for use in aerospace engineering. In aerospace, the atmosphere is highly oxidative and experiences very high temperature. In addition to this, the materials require high thermal stability and high abrasion resistance in that atmosphere. The C/C–SiC composite meets with these requirements. In this paper, the C/C–SiC composite by liquid silicon infiltration is reviewed thoroughly.

  12. Near-equilibrium growth of thick, high quality beta-SiC by sublimation

    Science.gov (United States)

    Shields, Virgil B.; Fekade, Konjit; Spencer, Michael G.

    1993-01-01

    A close spaced near-equilibrium growth technique was used to produce thick, high quality epitaxial layers of beta-silicon carbide. The process utilized a sublimation method to grow morphologically smooth layers. The beta silicon carbide growth layers varied from about 200 to 750 microns in thickness. Chemical vapor deposition grown, 2-10 microns, beta silicon carbide films were used as seeds at 1860 and 1910 C growth temperatures. The respective average growth rates were 20 and 30 microns per hour. The layers are p-type with a 3.1 x 10 exp 17/cu cm carrier concentration. Electrical measurements indicate considerable improvement in the breakdown voltage of Schottky barriers on growth samples. Breakdown values ranged from 25 to 60 V. These measurements represent the highest values reported for 3C-SiC.

  13. Thermodynamic Calculations of Melt in Melt Pool During Laser Cladding High Silicon Coatings

    Institute of Scientific and Technical Information of China (English)

    DONG Dan-yang; LIU Chang-sheng; ZHANG Bin

    2008-01-01

    Based on the Miedema's formation heat model for binary alloys and the Toop's asymmetric model for terna-ry alloys, the formation heat, excess entropy, and activity coefficients of silicon ranging from 1 900 K to 4 100 K in the Fe-Si-C melt formed during the laser cladding high silicon coatings process were calculated. The results indicated that all values of InγOSi, εCSi, ρSiSi and ρCSi are negative in the temperature range and these values increase as the tempera-ture increases. And all values of εSiSi and ρSi-CSi are positive and these values decrease with increasing temperature. The iso-activity lines of silicon are distributed axisymmetrically to the incident laser beam in the melt pool vertical to the laser scanning direction. And the iso-activity lines of silicon in the front of the melt pool along the laser scanning direction are more intensive than those in the back of the melt pool. The activity of silicon on the bottom of the melt pool is lower than that in the effecting center of laser beam on the top surface of the melt pool and it may be the im-portant reason for the formation of the silicides and excellent metallurgical bonding between the laser cladding coating and the substrate.

  14. Plastic Deformation of Micromachined Silicon Diaphragms with a Sealed Cavity at High Temperatures

    Directory of Open Access Journals (Sweden)

    Juan Ren

    2016-02-01

    Full Text Available Single crystal silicon (SCS diaphragms are widely used as pressure sensitive elements in micromachined pressure sensors. However, for harsh environments applications, pure silicon diaphragms are hardly used because of the deterioration of SCS in both electrical and mechanical properties. To survive at the elevated temperature, the silicon structures must work in combination with other advanced materials, such as silicon carbide (SiC or silicon on insulator (SOI, for improved performance and reduced cost. Hence, in order to extend the operating temperatures of existing SCS microstructures, this work investigates the mechanical behavior of pressurized SCS diaphragms at high temperatures. A model was developed to predict the plastic deformation of SCS diaphragms and was verified by the experiments. The evolution of the deformation was obtained by studying the surface profiles at different anneal stages. The slow continuous deformation was considered as creep for the diaphragms with a radius of 2.5 mm at 600 °C. The occurrence of plastic deformation was successfully predicted by the model and was observed at the operating temperature of 800 °C and 900 °C, respectively.

  15. High-efficiency deflection of high energy protons due to channeling along the axis of a bent silicon crystal

    Science.gov (United States)

    Scandale, W.; Arduini, G.; Butcher, M.; Cerutti, F.; Garattini, M.; Gilardoni, S.; Lechner, A.; Masi, A.; Mirarchi, D.; Montesano, S.; Redaelli, S.; Rossi, R.; Smirnov, G.; Breton, D.; Burmistrov, L.; Chaumat, V.; Dubos, S.; Maalmi, J.; Puill, V.; Stocchi, A.; Bagli, E.; Bandiera, L.; Germogli, G.; Guidi, V.; Mazzolari, A.; Dabagov, S.; Murtas, F.; Addesa, F.; Cavoto, G.; Iacoangeli, F.; Galluccio, F.; Afonin, A. G.; Chesnokov, Yu. A.; Durum, A. A.; Maisheev, V. A.; Sandomirskiy, Yu. E.; Yanovich, A. A.; Kovalenko, A. D.; Taratin, A. M.; Denisov, A. S.; Gavrikov, Yu. A.; Ivanov, Yu. M.; Lapina, L. P.; Malyarenko, L. G.; Skorobogatov, V. V.; James, T.; Hall, G.; Pesaresi, M.; Raymond, M.

    2016-09-01

    A deflection efficiency of about 61% was observed for 400 GeV/c protons due to channeling, most strongly along the axis of a bent silicon crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the axis. The measured probability of inelastic nuclear interactions of protons in channeling along the axis is only about 10% of its amorphous level whereas in channeling along the (110) planes it is about 25%. High efficiency deflection and small beam losses make this axial orientation of a silicon crystal a useful tool for the beam steering of high energy charged particles.

  16. Ultra-high cell-density silicon photomultipliers with high detection efficiency

    Science.gov (United States)

    Acerbi, Fabio; Gola, Alberto; Regazzoni, Veronica; Paternoster, Giovanni; Borghi, Giacomo; Piemonte, Claudio; Zorzi, Nicola

    2017-05-01

    Silicon photomultipliers (SiPMs) are arrays of many single-photon avalanche diodes (SPADs), all connected in parallel. Each SPAD is sensitive to single photons and the SiPM gives an output proportional to the number of detected photons. These sensors are becoming more and more popular in different applications, from high-energy physics to spectroscopy, and they have been significantly improved over last years, decreasing the noise, increasing the cell fill-factor (FF) and thus achieving very high photon-detection efficiency (PDE). In FBK (Trento, Italy), we developed new SiPM technologies with high-density (HD) and, more recently, ultra-high-density (UHD) of cells (i.e. density of SPADs). These technologies employ deep-trenches between cells, for electrical and optical isolation. As an extreme case the smallest-cell, SiPM, i.e. with 5μm cell pitch, has about 40000 SPADs per squared millimeter. Such small SPAD dimensions gives a significantly high dynamic range to the SiPM. These small-cells SiPM have a lower correlated noise (including lower afterpulsing probability) and a faster recharge time (in the order of few nanoseconds), and they also preserve a very good detection efficiency (despite the small SPAD dimension).

  17. Recoil implantation of boron into silicon by high energy silicon ions

    Science.gov (United States)

    Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

    2001-07-01

    A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

  18. Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1 nm silicon nanoparticles

    Science.gov (United States)

    Nayfeh, Osama M.; Antoniadis, Dimitri A.; Mantey, Kevin; Nayfeh, Munir H.

    2007-04-01

    Metal-oxide-semiconductor capacitors containing various densities of ex situ produced, colloidal, highly monodisperse, spherical, 1nm silicon nanoparticles were fabricated and evaluated for potential use as charge storage elements in future nonvolatile memory devices. The capacitance-voltage characteristics are well behaved and agree with similarly fabricated zero-nanoparticle control samples and with an ideal simulation. Unlike larger particle systems, the demonstrated memory effect exhibits effectively pure hole storage. The nature of charging, hole type versus electron type may be understood in terms of the characteristics of ultrasmall silicon nanoparticles: large energy gap, large charging energy, and consequently a small electron affinity.

  19. Silicon as anode for high-energy lithium ion batteries: From molten ingot to nanoparticles

    Science.gov (United States)

    Leblanc, Dominic; Hovington, Pierre; Kim, Chisu; Guerfi, Abdelbast; Bélanger, Daniel; Zaghib, Karim

    2015-12-01

    In this work, we demonstrate that a new mechanical attrition process can be used to prepare nanosilicon powder from metallurgical grade silicon lumps. Composite Li-ion anode made from this nanometer-size powder was found to have a high reversible capacity of 2400 mAh g-1 and an improved cycling stability compared to micrometer-sized powder. It is proposed that improved battery cycling performance is ascribed to the nanoscale silicon particles which supresses the volume expansion owing to its superplasticity.

  20. Interface Engineering of High Efficiency Organic-Silicon Heterojunction Solar Cells.

    Science.gov (United States)

    Yang, Lixia; Liu, Yaoping; Chen, Wei; Wang, Yan; Liang, Huili; Mei, Zengxia; Kuznetsov, Andrej; Du, Xiaolong

    2016-01-13

    Insufficient interface conformity is a challenge faced in hybrid organic-silicon heterojunction solar cells because of using conventional pyramid antireflection texturing provoking the porosity of interface. In this study, we tested alternative textures, in particular rounded pyramids and inverted pyramids to compare the performance. It was remarkably improved delivering 7.61%, 8.91% and 10.04% efficiency employing conventional, rounded, and inverted pyramids, respectively. The result was interpreted in terms of gradually improving conformity of the Ag/organic/silicon interface, together with the gradually decreasing serial resistance. Altogether, the present data may guide further efforts arising the interface engineering for mastering high efficient heterojunction solar cells.

  1. Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation

    CERN Document Server

    Chen, Charlton J; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

    2011-01-01

    We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 mm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ~ 30 mW laser powers. Over this tuning range, the cavity Q decreases from 3.2\\times10^5 to 1.2\\times10^5. Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

  2. High-resolution tracking with silicon strip detectors for relativistic ions

    CERN Document Server

    Hou, S R; Ambrosi, G; Balboni, C; Battiston, R; Burger, W J; Chang, Y H; Geissel, H; Ionica, M; Lustermann, W; Maehlum, G; Menichelli, M; Pauluzzi, M; Postolache, V; Produit, N; Rapin, D; Ren, D; Ribordy, M; Sann, H; Schardt, D; Sümmerer, K; Viertel, Gert M

    1999-01-01

    Tracking with silicon strip detectors for relativistic ions has been investigated using a sup 1 sup 2 C beam of 1.5 GeV/u at GSI. The ionization charge spectrum and the charge sharing between strips are presented. The strip cluster of carbon ion can be selected based on the cluster charge with high efficiency and little contamination. The spatial resolution of the silicon strip detectors is evaluated. The angular distribution of multiple Coulomb scattering was investigated with lead absorbers. The results are compared to the Moliere theory and the Gaussian approximation of GEANT calculations. (author)

  3. Controlled fabrication of individual silicon quantum rods yielding high intensity, polarized light emission

    Science.gov (United States)

    Bruhn, Benjamin; Valenta, Jan; Linnros, Jan

    2009-12-01

    Elongated silicon quantum dots (also referred to as rods) were fabricated using a lithographic process which reliably yields sufficient numbers of emitters. These quantum rods are perfectly aligned and the vast majority are spatially separated well enough to enable single-dot spectroscopy. Not only do they exhibit extraordinarily high linear polarization with respect to both absorption and emission, but the silicon rods also appear to luminesce much more brightly than their spherical counterparts. Significantly increased quantum efficiency and almost unity degree of linear polarization render these quantum rods perfect candidates for numerous applications.

  4. Defects in Fast-Neutron Irradiated Nitrogen-Doped Czochralski Silicon after Annealing at High Temperature

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Fast-neutron irradiated nitrogen-doped Czochralski silicon (NCZ-Si) was annealed at 1100 ℃ for different time, then FTIR and optical microscope were used to study the behavior of oxygen. It is found that [Oi] increase at the early stage then decrease along with the increasing of anneal time. High density induced-defects can be found in the cleavage plane. By comparing NCZ-Si with Czochralski silicon (CZ-Si), [Oi] in NCZ-Si decrease more after anneal 24 h.

  5. Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).

  6. High resolution Laplace DLTS studies of defects in ion-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Evans-Freeman, J.H. E-mail: j.evans-freeman@umist.ac.uk; Abdelgader, N.; Kan, P.Y.Y.; Peaker, A.R

    2002-01-01

    We have used high resolution Laplace deep level transient spectroscopy (LDLTS) to investigate defects in n-type silicon caused by implantation of Si, Ge or Er with doses of the order of 1x10{sup 9} cm{sup -2}. These are compared with defects created in proton irradiated n-type silicon. Unlike the simple proton irradiated case, LDLTS spectra of ion implanted silicon show that there are many emission rates associated with defects with energies in the region of E{sub c}-400 meV. We have carried out annealing studies and Laplace DLTS depth profiling and show that the complex spectra measured from a region less than half way through the implant simplify as the profile is moved through the implant and towards the tail. Annealing studies show that these defects survive an anneal that should remove the E-centre.

  7. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of H

  8. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of H

  9. 77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

    KAUST Repository

    Sallam, M. O.

    2011-07-01

    Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of U-turn that causes 180 phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 and excited with 90 phase shift. Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency. © 2011 IEEE.

  10. Ultra-high efficiency, fast graphene micro-heater on silicon

    DEFF Research Database (Denmark)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn

    2017-01-01

    We demonstrate an ultra-high efficiency and fast graphene microheater on silicon photonic crystal waveguide. By taking advantage of slow-light effect, a tuning efficiency of 1.07 nm/mW and power consumption per free spectral range of 3.99 mW. A fast rise and decay times (10% to 90%) of only 750 ns...

  11. Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

    KAUST Repository

    Cui, Li-Feng

    2009-09-09

    We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires showed great performance as anode material. Since carbon has a much smaller capacity compared to silicon, the carbon core experiences less structural stress or damage during lithium cycling and can function as a mechanical support and an efficient electron conducting pathway. These nanowires have a high charge storage capacity of ∼2000 mAh/g and good cycling life. They also have a high Coulmbic efficiency of 90% for the first cycle and 98-99.6% for the following cycles. A full cell composed of LiCoO2 cathode and carbon-silicon core-shell nanowire anode is also demonstrated. Significantly, using these core-shell nanowires we have obtained high mass loading and an area capacity of ∼4 mAh/cm2, which is comparable to commercial battery values. © 2009 American Chemical Society.

  12. Study on high efficient electric discharge milling of silicon carbide ceramic with high resistivity

    Institute of Scientific and Technical Information of China (English)

    JI RenJie; LIU YongHong; YU LiLi; LI XiaoPeng; DONG Xin

    2008-01-01

    A new method which employs a group pulse power supply for electric discharge milling of the silicon high pulse utilization, the material removal rate (MRR) can reach 72.9 mm3/min. The effects of high-frequency pulse duration, high-frequency pulse interval, peak voltage, peak current, polarity, ro-tate speed and group frequency on the process performance have been investigated. Also the EDMed surface microstructure is examined with a scanning electron microscope (SEM), an X-ray diffraction (XRD), an energy dispersive spectrometer (EDS) and a micro hardness tester. The results show that the conditions of smaller high-frequency pulse duration and pulse interval, higher peak voltage and peak current, and positive tool polarity are suitable for machining the SiC ceramic. The optimal rotate speed is 1090 r/rain and the preferable group frequency is 730 Hz. In addition, there is a small quantity of iron on machined surface when machining with steel electrode. The average grain size of the EDMed sur-face is smaller than that of the unprocessed, and the micro hardness of machined surface is superior to that of the unprocessed.

  13. High temperature Hexoloy{trademark} SX silicon carbide. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Srinivasan, G.V.; Lau, S.K.; Storm, R.S. [Carborundum Co., Niagara Falls, NY (United States)

    1994-09-01

    HEXOLOY{reg_sign} SX-SiC, fabricated with Y and Al containing compounds as sintering aids, has been shown to possess significantly improved strength and toughness over HEXOLOY{reg_sign}SA-SiC. This study was undertaken to establish and benchmark the complete mechanical property database of a first generation material, followed by a process optimization task to further improve the properties. Mechanical characterization on the first generation material indicated that silicon-rich pools, presumably formed as a reaction product during sintering, controlled the strength from room temperature to 1,232 C. At 1,370 C in air, the material was failing due to a glass-phase formation at the surface. This glass-phase formation was attributed to the reaction of yttrium aluminates, which exist as a second phase in the material, with the ambient. This process was determined to be a time-dependent one that leads to slow crack growth. Fatigue experiments clearly indicated that the slow crack growth driven by the reaction occurred only at temperatures >1,300 C, above the melting point of the glass phase. Process optimization tasks conducted included the selection of the best SiC powder source, studies on mixing/milling conditions for SiC powder with the sintering aids, and a designed experiment involving a range of sintering and post-treatment conditions. The optimization study conducted on the densification variables indicated that lower sintering temperatures and higher post-treatment pressures reduce the Si-rich pool formation, thereby improving the room-temperature strength. In addition, it was also determined that furnacing configuration and atmosphere were critical in controlling the Si-rich formation.

  14. Silicon electro-optic modulator with high-permittivity gate dielectric layer

    Institute of Scientific and Technical Information of China (English)

    Mengxia Zhu; Zhiping Zhou; Dingshan Gao

    2009-01-01

    A high-permittivity (high-k) material is applied as the gate dielectric layer in a silicon metal-oxidesemiconductor (MOS) capacitor to form a special electro-optic (EO) modulator.Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material.The device has an ultra-compact dimension of 691 μm in length.

  15. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

    OpenAIRE

    Sangchoel Kim; Jehoon Choi; Minsoo Jung; Seongjeen Kim; Sungjae Joo

    2013-01-01

    We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate ...

  16. High Power Silicon Carbide (SiC) Power Processing Unit Development

    Science.gov (United States)

    Scheidegger, Robert J.; Santiago, Walter; Bozak, Karin E.; Pinero, Luis R.; Birchenough, Arthur G.

    2015-01-01

    NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.

  17. High-efficiency and low-jitter Silicon single-photon avalanche diodes based on nanophotonic absorption enhancement

    CERN Document Server

    Ma, Jian; Yu, Zongfu; Jiang, Xiao; Huo, Yijie; Zang, Kai; Zhang, Jun; Harris, James S; Jin, Ge; Zhang, Qiang; Pan, Jian-Wei

    2015-01-01

    Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device fabrication for current silicon SPADs, the key parameters of detection befficiency and timing jitter are often forced to compromise. Here, we propose a nanostructured silicon SPAD, which achieves high detection efficiency with excellent timing jitter simultaneously over a broad spectral range. The optical and electric simulations show significant performance enhancement compared with conventional silicon SPAD devices. This nanostructured devices can be easily fabricated and thus well suited for practical applications.

  18. Generation of tunable, high repetition rate frequency combs with equalized spectra using carrier injection based silicon modulators

    Science.gov (United States)

    Nagarjun, K. P.; Selvaraja, Shankar Kumar; Supradeepa, V. R.

    2016-03-01

    High repetition-rate frequency combs with tunable repetition rate and carrier frequency are extensively used in areas like Optical communications, Microwave Photonics and Metrology. A common technique for their generation is strong phase modulation of a CW-laser. This is commonly implemented using Lithium-Niobate based modulators. With phase modulation alone, the combs have poor spectral flatness and significant number of missing lines. To overcome this, a complex cascade of multiple intensity and phase modulators are used. A comb generator on Silicon based on these principles is desirable to enable on-chip integration with other functionalities while reducing power consumption and footprint. In this work, we analyse frequency comb generation in carrier injection based Silicon modulators. We observe an interesting effect in these comb generators. Enhanced absorption accompanying carrier injection, an undesirable effect in data modulators, shapes the amplitude here to enable high quality combs from a single modulator. Thus, along with reduced power consumption to generate a specific number of lines, the complexity has also been significantly reduced. We use a drift-diffusion solver and mode solver (Silvaco TCAD) along with Soref-Bennett relations to calculate the variations in refractive indices and absorption of an optimized Silicon PIN - waveguide modulator driven by an unbiased high frequency (10 Ghz) voltage signal. Our simulations demonstrate that with a device length of 1 cm, a driving voltage of 2V and minor shaping with a passive ring-resonator filter, we obtain 37 lines with a flatness better than 5-dB across the band and power consumption an order of magnitude smaller than Lithium-Niobate modulators.

  19. TOTAL QUALITY MANAGEMENT IN HIGH EDUCATION

    Directory of Open Access Journals (Sweden)

    Hasan SERİN, Alper AYTEKİN

    2009-01-01

    Full Text Available The approach of Total Quality Management (TQM has been even more common and most recently its use in high education has been discussed. Likewise the enterprises producing various products, universities have also inputs, processes, and outputs. Due to conditions of competition, universities have to improve the qualities of these inputs, processes, and outputs, according to satisfaction, demands, and expectations of internal and external customers. If the TQM has been implemented in the universities with a manner that aims for customer satisfaction (students, lecturers, public and private establishments, and families, supports constant development, ensures participatory approach, and encourages working in groups, it will provide universities with effectiveness, efficiency, dynamics, and economics. In this study, common problems of universities, definitions of quality and TQM in high education, customer concept at universities, and factors affecting the quality of education have been explained. Besides, in order TQM approach to be successfully implemented in the universities, various suggestions have been presented.

  20. Preparation of high-quality poly-Si films by a solid phase crystallizing method

    CERN Document Server

    Yao Ruo He

    2002-01-01

    A solid phase crystallizing method has been developed to grow a Si crystal at temperatures as low as 550 degree C. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest grain size, examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples, is approximately 1 mu m for substrate temperature at 300 degree C and annealed at 550 degree C for 3 hours

  1. Structure and selected properties of high-aluminium Zn alloy with silicon addition

    Directory of Open Access Journals (Sweden)

    A. Zyska

    2011-07-01

    Full Text Available The results of examinations concerning the abrasive wear resistance, hardness, and thermal expansion of high-aluminium zinc alloys are presented. The examinations were carried out for five synthetic ZnAl28 alloys with variable silicon content ranging from 0.5% to 3.5%, and – for the purpose of comparison – for the standardised ZnAl28Cu4 alloy. It was found that silicon efficiently increases the tribological properties and decreases the coefficient of thermal expansion of zinc alloys. The most advantageous set of the examined properties is exhibited by the alloys containing over 2.5% Si. They are characterised by higher parameters as compared with the standardised alloy. Observations of microstructures reveal that silicon precipitates as a separate compact phase, and its morphology depends on t he Si content in the alloy. The performed examinations show that silicon can satisfactorily replace copper in high aluminium Zn alloys, thus eliminating the problem of dimensional instability of castings.

  2. Silicone rubber-coated highly sensitive optical fiber sensor for temperature measurement

    Science.gov (United States)

    Bhardwaj, Vanita; Gangwar, Rahul Kumar; Singh, Vinod Kumar

    2016-12-01

    A silicone rubber-coated Mach-Zehnder interferometer (MZI) is proposed and applied to temperature measurement. The MZI is fabricated by splicing single mode fiber between a short section of no-core fiber (NCF) and the ultra-abrupt taper region. The sensing length of MZI is coated with liquid silicone rubber to enhance the temperature sensitivity. Here, NCF is used to excite the higher order cladding mode, the ultra-abrupt taper region acts as a optical fiber coupler, and the silicone rubber coating on sensing length is used as solid cladding material instead of liquid. The enhancement of the sensitivity of a device is due to the high refractive index (1.42) and thermo-optic coefficient (-1.4×10-4/°C) of silicone rubber as compared to liquid cladding temperature sensors. The experiment was performed for both coated and uncoated MZI and the results were compared. The MZI exhibits a high temperature sensitivity of 253.75 and 121.26 pm/°C for coated and uncoated sensing probes, respectively, in the temperature range from 30°C to 75°C.

  3. Performance optimization of high-order Lamb wave sensors based on silicon carbide substrates.

    Science.gov (United States)

    Chen, Zhe; Fan, Li; Zhang, Shu-yi; Zhang, Hui

    2016-02-01

    Silicon carbide (SiC), as a new type of material for substrates in micro-electromechanical system (MEMS), was given high consideration in virtue of the properties of high acoustic velocity, low loss, chemical resistance, and etc. In this work, five performance parameters, which are electromechanical coupling coefficients, mass sensitivities, conductivity sensitivities, insert losses and minimum detectable masses, are theoretically investigated in Lamb wave chemical sensors for gas sensing based on SiC substrates. It is presented that higher performance can be achieved based on high-order modes other than fundamental modes, and the abovementioned five parameters can be simultaneously optimized. Then, according to the optimized operating conditions, operating parameters of the SiC-based high-order Lamb wave sensors are designed, which can be easily realized in MEMS technology. Finally, it is demonstrates that the SiC-based sensor exhibits better performance than that of the sensor with a conventional silicon substrate.

  4. Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

    Institute of Scientific and Technical Information of China (English)

    YANG Fuliang; GAN Weiping; CHEN Zhaoke

    2007-01-01

    Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space- flight industry. Al-30Si and Al-40Si are fabricated with air- atomization and vacuum-canning hot-extrusion process. The density, thermal conductivity, hermeticity and thermal expan- sion coefficients of the material are measured, and the relationship between extrusion temperature and properties is obtained. Experimental results show that the density of high- silicon aluminum alloys prepared with this method is as high as 99.64% of the theory density, and increases with elevating extrusion temperature. At the same time, thermal conductiv- ity varies between 104-140W/(m.K); with the extrusion temperature, thermal expansion coefficient also increases but within 13 × 10-6 (at 100℃) and hermeticity of the material is high to 10-9 order of magnitude.

  5. Dielectric elastomers, with very high dielectric permittivity, based on silicone and ionic interpenetrating networks

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Hvilsted, Søren;

    2015-01-01

    Dielectric elastomers (DEs), which represent an emerging actuator and generator technology, admittedly have many favourable properties, but their high driving voltages are one of the main obstacles to commercialisation. One way to reduce driving voltage is by increasing the ratio between dielectr...... as well as relatively high breakdown strength. All IPNs have higher dielectric losses than pure silicone elastomers, but when accounting for this factor, IPNs still exhibit satisfactory performance improvements....... is demonstrated herein, and a number of many and important parameters, such as dielectric permittivity/loss, viscoelastic properties and dielectric breakdown strength, are investigated. Ionic and silicone elastomer IPNs are promising prospects for dielectric elastomer actuators, since very high permittivities......Dielectric elastomers (DEs), which represent an emerging actuator and generator technology, admittedly have many favourable properties, but their high driving voltages are one of the main obstacles to commercialisation. One way to reduce driving voltage is by increasing the ratio between dielectric...

  6. Silicon carbide thin films for high temperature microelectromechanical systems

    Science.gov (United States)

    Fleischman, Aaron Judah

    Silicon Carbide (SiC) was studied for use as a material in microelectromechanical systems (MEMS). An APCVD reactor was built to deposit SiC on 100-mm diameter substrates. 3C-SiC films were grown heteroepitaxially atop 100-mm Si wafers. SiC was deposited atop suitable sacrificial layers of polysilicon and thermal oxide. The reactor gas flow was modeled using finite element techniques. The gas flow formed a recirculating pattern, with fresh reactant gases injected at the top of the reactor, traveling down the inside sidewalls and introduced at the bottom of the wafer, forming a plume of heated gases rising to the top of the reactor. This recirculation pattern explains the gradually decreasing growth rate from the wafer's bottom to its top as reactant gases are gradually depleted as they rise. Intentional doping of 3C-SiC films was studied, using diborane and phosphine dopant sources. SIMS indicated that B and P could be incorporated into 3C-SiC films, however B doped films were electrically compensated due to trace amounts of nitrogen in the diborane. Boron concentrations above 3C-SiC's solid solubility caused the SiC to become polycrystalline. Phosphorus incorporation was less predictable and did not vary linearly with phosphine flow rates. A reactive ion etch (REE) process was developed to etch 3C-SiC. Addition of He to the plasma chemistry enhanced the etch rates and etch anisotropy of the 3C-SiC. The etch recipe also produced similar results for polycrystalline SiC on polysilicon and thermal oxide. A maximum SiC etch rate of 1,267 A/min with a selectivity of 1.4 to Si was obtained. Using the above methods, SiC resonant devices were fabricated using polysilicon and thermal oxide as sacrificial layers. Polysilicon resonant devices were fabricated for comparison. The devices were tested by measuring their resonant frequency at room and elevated temperatures to 900°C to determine Young's modulus and its temperature dependence. All devices showed resonant frequency

  7. A sub-atmospheric chemical vapor deposition process for deposition of oxide liner in high aspect ratio through silicon vias.

    Science.gov (United States)

    Lisker, Marco; Marschmeyer, Steffen; Kaynak, Mehmet; Tekin, Ibrahim

    2011-09-01

    The formation of a Through Silicon Via (TSV) includes a deep Si trench etching and the formation of an insulating layer along the high-aspect-ratio trench and the filling of a conductive material into the via hole. The isolation of the filling conductor from the silicon substrate becomes more important for higher frequencies due to the high coupling of the signal to the silicon. The importance of the oxide thickness on the via wall isolation can be verified using electromagnetic field simulators. To satisfy the needs on the Silicon dioxide deposition, a sub-atmospheric chemical vapor deposition (SA-CVD) process has been developed to deposit an isolation oxide to the walls of deep silicon trenches. The technique provides excellent step coverage of the 100 microm depth silicon trenches with the high aspect ratio of 20 and more. The developed technique allows covering the deep silicon trenches by oxide and makes the high isolation of TSVs from silicon substrate feasible which is the key factor for the performance of TSVs for mm-wave 3D packaging.

  8. High temperature furnace for liquid phase epitaxy of silicon carbide in microgravity

    Science.gov (United States)

    Lockowandt, Christian; Yakimova, Rositza; Syväjärvi and, Mikael; Janzén, Erik

    1999-04-01

    The high temperature furnace for Liquid Phase Epitaxy (LPE) was developed by Swedish Space Corporation. It was developed for a Silicon Carbide liquid phase epitaxy microgravity experiment performed by Linköping University, Sweden. The LPE is capable of processing materials up to 1900°C in ultra clean atmosphere or vacuum in accordance with requirements for semiconductor crystal growth. The LPE has the capability to heat and cool the samples rapidly due to a high power input and a cooling gas system, this makes it possible to utilise it for short duration microgravity flights. The samples can be processed in isothermal conditions or with a temperature gradient up to 5°C/mm. The two resistive heaters are controlled individually which makes it possible for the user to pre-program an optional temperature profile for the experiment. The LPE was launched on the European microgravity rocket MASER 7 at Esrange in May 1996. For the first time under microgravity conditions four SiC samples were processed successfully. SiC has in comparison with Si superior properties regarding power electronics [1]. However, the quality of the material needs to be improved considerably before commercial production. Growth from a solution may give rise to an impurity microsegregation and growth instabilities due to the gravitation-induced convection, presumably resulting in an alteration of the point defect assembly. Growth under microgravity is thus a key for a better understanding of the growth process and defect formation. The material grown in microgravity is improved compared with on-ground reference growth.

  9. Silicon Light: a European FP7 project aiming at high efficiency thin film silicon solar cells on foil. Monolithic series interconnection of flexible thin-film PV devices

    Energy Technology Data Exchange (ETDEWEB)

    Soppe, W. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Haug, F.J. [Ecole Polytechnique Federale de Lausanne EPFL, Photovoltaics and Thin Film Electronics Laboratory, Rue A.-L. Breguet 2, 2000 Neuchatel (Switzerland); Couty, P. [VHFTechnologies SA, Rue Edouard-Verdan 2, CH-1400 Yverdon-les-Bains (Switzerland); Duchamp, M. [Technical University of Denmark, Center for Electron Nanoscopy, DK-2800 Kongens Lyngby (Denmark); Schipper, W. [Nanoptics GmbH, Innungstr.5, 21244 Buchholz (Germany); Krc, J. [University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25, SI-1000 Ljubljana (Slovenia); Sanchez, G. [Universidad Politecnica de Valencia, I.U.I. Centro de Tecnologia Nanofotonica, 46022 Valencia (Spain); Leitner, K. [Umicore Thin Film Products AG, Balzers (Liechtenstein); Wang, Q. [Shanghai Jiaotong University, Research Institute of Micro/Nanometer Science and Technology, 800 Dongchuan Road, Min Hang, 200240 Shanghai (China)

    2011-09-15

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: (a) advanced light trapping by implementing nanotexturization through UV Nano Imprinting Lithography (UV-NIL); (b) growth of crack-free silicon absorber layers on highly textured substrates; (c) development of new TCOs which should combine the best properties of presently available materials like ITO and AZO. The paper presents the midterm status of the project results, showing model calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils with nanotexture is shown. Microcrystalline and amorphous silicon single junction cells with stable efficiencies with more than 8% have been made, paving the way towards a-Si/{mu}c-Si tandem cells with more than 11% efficiency.

  10. Identifying suitable substrates for high-quality graphene-based heterostructures

    Science.gov (United States)

    Banszerus, L.; Janssen, H.; Otto, M.; Epping, A.; Taniguchi, T.; Watanabe, K.; Beschoten, B.; Neumaier, D.; Stampfer, C.

    2017-06-01

    We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.

  11. A New High Quality EAF Charge

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to solve the problem of the shortage of scrap, especially high quality scrap, granular pig iron, a new substitute for scrap or DRI (direct reduction iron) has been developed. The technical process of decarbonized granular pig iron has been evaluated. The result shows that this new process is superior to direct reduction process in product quality, construction investment, operation flexibility, production efficiency etc. Decarbonized granular pig iron (DGPI) not only can be used as conventional scrap but also can be charged into EAF as high purity burden equivalent to heavy scrap.

  12. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    Science.gov (United States)

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld; Cai, Xinlun; Zhou, Xiaoqi; Rottwitt, Karsten; Oxenløwe, Leif Katsuo

    2017-06-01

    Quantum key distribution provides an efficient means to exchange information in an unconditionally secure way. Historically, quantum key distribution protocols have been based on binary signal formats, such as two polarization states, and the transmitted information efficiency of the quantum key is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually unbiased bases in a four-dimensional Hilbert space, and achieved low and stable quantum bit error rate well below both the coherent attack and individual attack limits. Compared to previous demonstrations, the use of a multicore fiber in our protocol provides a much more efficient way to create high-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling manipulating high-dimensional quantum states in a compact and stable manner. Our demonstration paves the way to utilize state-of-the-art multicore fibers for noise tolerance high-dimensional quantum key distribution, and boost silicon photonics for high information efficiency quantum communications.

  13. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  14. A prototype of very high-resolution small animal PET scanner using silicon pad detectors

    CERN Document Server

    Park, S J; Huh, S; Kagan, H; Honscheid, K; Burdette, D; Chesi, Enrico Guido; Lacasta, C; Llosa, G; Mikuz, M; Studen, A; Weilhammer, P; Clinthorne, N H

    2007-01-01

    Abstract A very high-resolution small animal positron emission tomograph (PET), which can achieve sub-millimeter spatial resolution, is being developed using silicon pad detectors. The prototype PET for a single slice instrument consists of two 1 mm thick silicon pad detectors, each containing a 32×16 array of 1.4×1.4 mm pads readout with four VATAGP3 chips which have 128 channels low-noise self-triggering ASIC in each chip, coincidence units, a source turntable and tungsten slice collimator. The silicon detectors were located edgewise on opposite sides of a 4 cm field-of-view to maximize efficiency. Energy resolution is dominated by electronic noise, which is 0.98% (1.38 keV) FWHM at 140.5 keV. Coincidence timing resolution is 82.1 ns FWHM and coincidence efficiency was measured to be 1.04×10−3% from two silicon detectors with annihilation photons of 18F source. Image data were acquired and reconstructed using conventional 2-D filtered-back projection (FBP) and a maximum likelihood expectation maximizat...

  15. Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Zhu, Xiaolong; Xiao, Sanshui

    2015-01-01

    comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching......Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of the Fermi level enables electro-optical...... modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we...

  16. Fabrication of superhydrophobic and highly oleophobic silicon-based surfaces via electroless etching method

    Science.gov (United States)

    Nguyen, Thi Phuong Nhung; Dufour, Renaud; Thomy, Vincent; Senez, Vincent; Boukherroub, Rabah; Coffinier, Yannick

    2014-03-01

    This study reports on a simple method for the preparation of superhydrophobic and highly oleophobic nanostructured silicon surfaces. The technique relies on metal-assisted electroless etching of silicon in sodium tetrafluoroborate (NaBF4) aqueous solution. Then, silver particles were deposited on the obtained surfaces, changing their overall physical morphology. Finally, the surfaces were coated by either C4F8, a fluoropolymer deposited by plasma, or by SiOx overlayers chemically modified with 1H,1H,2H,2H-perfluorodecyltrichlorosilane (PFTS) through silanization reaction. All these surfaces exhibit a superhydrophobic character (large apparent contact angle and low hysteresis with respect to water). In addition, they present high oleophobic properties, i.e. a high repellency to low surface energy liquids with various contact angle hysteresis, both depending on the morphology and type of coating.

  17. SiMPl - High efficient silicon photomultipliers with integrated bulk resistor

    Energy Technology Data Exchange (ETDEWEB)

    Jendrysik, Christian; Andricek, Ladislav; Liemann, Gerhard; Moser, Hans-Guenther; Ninkovic, Jelena; Richter, Rainer [Max-Planck-Institute for Physics, Semiconductor Laboratory, Munich (Germany); Lutz, Gerhard [PN Sensor GmbH, Munich (Germany)

    2010-07-01

    Silicon photomultipliers (SiPM) are avalanche photodetectors which tend to replace conventional photomultiplier tubes in many application areas where detectors with high photon detection efficiency (PDE) are in the focus of interest. For Geiger mode operation high ohmic polysilicon is needed as quench resistor. On the one hand this forms a barrier for incident light, thus decreasing the PDE, which is a crucial point at low light levels. On the other hand it's also the most cost driving technological issue in fabrication. We present a novel design for a high efficient SiPM with the quench resistors integrated into the silicon bulk. Therefore obstacles for light like metal lines or contacts within the active area can be omitted and the fill factor of the device is only limited by the gaps necessary for optical crosstalk suppression. First results of this novel light detector are presented.

  18. Formation of hypereutectic silicon particles in hypoeutectic Al-Si alloys under the influence of high-intensity ultrasonic vibration

    Directory of Open Access Journals (Sweden)

    Xiaogang Jian

    2013-03-01

    Full Text Available The modification of eutectic silicon is of general interest since fine eutectic silicon along with fine primary aluminum grains improves mechanical properties and ductilities. In this study, high intensity ultrasonic vibration was used to modify the complex microstructure of aluminum hypoeutectic alloys. The ultrasonic vibrator was placed at the bottom of a copper mold with molten aluminum. Hypoeutectic Al-Si alloy specimens with a unique in-depth profile of microstructure distribution were obtained. Polyhedral silicon particles, which should form in a hypereutectic alloy, were obtained in a hypoeutectic Al-Si alloy near the ultrasonic radiator where the silicon concentration was higher than the eutectic composition. The formation of hypereutectic silicon near the radiator surface indicates that high-intensity ultrasonic vibration can be used to influence the phase transformation process of metals and alloys. The size and morphology of both the silicon phase and the aluminum phase varies with increasing distance from the ultrasonic probe/radiator. Silicon morphology develops into three zones. Polyhedral primary silicon particles present in zone I, within 15 mm from the ultrasonic probe/radiator. Transition from hypereutectic silicon to eutectic silicon occurs in zone II about 15 to 20 祄 from the ultrasonic probe/radiator. The bulk of the ingot is in zone III and is hypoeutectic Al-Si alloy containing fine lamellar and fibrous eutectic silicon. The grain size is about 15 to 25 祄 in zone I, 25 to 35 祄 in zone II, and 25 to 55 祄 in zone III. The morphology of the primary ?Al phase is also changed from dendritic (in untreated samples to globular. Phase evolution during the solidification process of the alloy subjected to ultrasonic vibration is described.

  19. Assuring quality in high-consequence engineering

    Energy Technology Data Exchange (ETDEWEB)

    Hoover, Marcey L.; Kolb, Rachel R.

    2014-03-01

    In high-consequence engineering organizations, such as Sandia, quality assurance may be heavily dependent on staff competency. Competency-dependent quality assurance models are at risk when the environment changes, as it has with increasing attrition rates, budget and schedule cuts, and competing program priorities. Risks in Sandia's competency-dependent culture can be mitigated through changes to hiring, training, and customer engagement approaches to manage people, partners, and products. Sandia's technical quality engineering organization has been able to mitigate corporate-level risks by driving changes that benefit all departments, and in doing so has assured Sandia's commitment to excellence in high-consequence engineering and national service.

  20. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  1. Highly stressed carbon film coatings on silicon potential applications

    CERN Multimedia

    Sharda, T

    2002-01-01

    The fabrication of highly stressed and strongly adhered nanocrystalline diamond films on Si substrates is presented. A microwave plasma CVD method with controlled and continuous bias current density was used to grow the films. The stress/curvature of the films can be varied and controlled by altering the BCD. Potential applications for these films include particle physics and x-ray optics.

  2. Functional silicone copolymers and elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

    . This was done trough the synthesis of new functionalizable siloxane copolymers [2] that allow for the attachment of high dielectric permittivity molecules through copper-catalyzed azide-alkyne 1,3-dipolar cycloaddition (CuAAC) reactions. The synthesised siloxane copolymers were prepared via the tris...

  3. High Temperature Silicon Carbide (SiC) Traction Motor Drive

    Science.gov (United States)

    2011-08-09

    power  Threshold volume is 8.4 liters, or 513 cu in  Threshold weight is 14 kg = 30.8 lb PERSPECTIVE To provide some perspective on the...coldplate is a high efficiency, aluminum brazed assembly that makes use of technology developed for the commercial electric bus powertrains. The

  4. Development of optical quality assurance procedures for the sensors of silicon tracking system (STS) detector of the compressed baryonic matter experiment (CBM) at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Lavrik, Evgeny [Eberhard-Karls Universitaet Tuebingen, Tuebingen (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The CBM experiment aims to study the properties of nuclear matter at high net-baryon densities. The STS is the key detector to reconstruct charged particle tracks created in heavy-ion interactions. In order to assure the quality of about 1300 silicon sensors, highly efficient and highly automated procedures need to be developed. In this contribution we report on a microscope camera based optical inspection system, used to scan along the individual sensors to recognize and classify sensor defects. Examples of these defects are: photo-resist residues, top metallization layer lithography defects, surface scratches. In order to separate and classify these defects various image-processing algorithms are used, including: pattern recognition, object classification, etc.

  5. Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

    Energy Technology Data Exchange (ETDEWEB)

    Poettgens, M.

    2007-11-22

    CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m{sup 2}, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the

  6. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-12-14

    Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

  7. Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

    Science.gov (United States)

    Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

    2016-10-01

    The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO2, while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μm depth, corresponding to an aspect ratio of ≈ 53.

  8. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  9. High visibility time-energy entangled photons from a silicon nanophotonic chip

    CERN Document Server

    Rogers, Steven; Lu, Xiyuan; Jiang, Wei C; Lin, Qiang

    2016-01-01

    Advances in quantum photonics have shown that chip-scale quantum devices are translating from the realm of basic research to applied technologies. Recent developments in integrated photonic circuits and single photon detectors indicate that the bottleneck for fidelity in quantum photonic processes will ultimately lie with the photon sources. We present and demonstrate a silicon nanophotonic chip capable of emitting telecommunication band photon pairs that exhibit the highest raw degree of time-energy entanglement from a micro/nanoscale source, to date. Biphotons are generated through cavity-enhanced spontaneous four-wave mixing (SFWM) in a high-Q silicon microdisk resonator, wherein the nature of the triply-resonant generation process leads to a dramatic Purcell enhancement, resulting in highly efficient pair creation rates as well as extreme suppression of the photon noise background. The combination of the excellent photon source and a new phase locking technique, allow for the observation of a nearly perfe...

  10. A scalable silicon photonic chip-scale optical switch for high performance computing systems.

    Science.gov (United States)

    Yu, Runxiang; Cheung, Stanley; Li, Yuliang; Okamoto, Katsunari; Proietti, Roberto; Yin, Yawei; Yoo, S J B

    2013-12-30

    This paper discusses the architecture and provides performance studies of a silicon photonic chip-scale optical switch for scalable interconnect network in high performance computing systems. The proposed switch exploits optical wavelength parallelism and wavelength routing characteristics of an Arrayed Waveguide Grating Router (AWGR) to allow contention resolution in the wavelength domain. Simulation results from a cycle-accurate network simulator indicate that, even with only two transmitter/receiver pairs per node, the switch exhibits lower end-to-end latency and higher throughput at high (>90%) input loads compared with electronic switches. On the device integration level, we propose to integrate all the components (ring modulators, photodetectors and AWGR) on a CMOS-compatible silicon photonic platform to ensure a compact, energy efficient and cost-effective device. We successfully demonstrate proof-of-concept routing functions on an 8 × 8 prototype fabricated using foundry services provided by OpSIS-IME.

  11. Development of Silicon Sensor Characterization System for Future High Energy Physics Experiments

    Directory of Open Access Journals (Sweden)

    Preeti kumari

    2015-08-01

    Full Text Available The Compact Muon Solenoid (CMS is one of the general purpose experiments at the Large Hadron Collider (LHC, CERN and has its Tracker built of all silicon strip and pixel sensors. Si sensors are expected to play extremely important role in the upgrades of the existing Tracker for future high luminosity environment and will also be used in future lepton colliders. However, properties of the silicon sensors have to be carefully understood before they can be put in the extremely high luminosity condition. At Delhi University (DU, we have been working on the development of Si sensor characterization system, as part of the collaboration with the CMS Experiment and RD50 collaboration. This works reports the installation of current-voltage (I-V and capacitance-voltage (C-V systems at DU.

  12. Signal generation in highly irradiated silicon microstrip detectors for the ATLAS experiment

    CERN Document Server

    Ruggiero, G

    2003-01-01

    Silicon detectors are the most diffused tracking devices in High Energy Physics (HEP). The reason of such success can be found in the characteristics of the material together with the existing advanced technology for the fabrication of these devices. Nevertheless in many modem HEP experiments the observation of vary rare events require data taking at high luminosity with a consequent extremely intense hadron radiation field that damages the silicon and degrades the performance of these devices. In this thesis work a detailed study of the signal generation in microstrip detectors has been produced with a special care for the ATLAS semiconductor tracker geometry. This has required a development of an appropriate setup to perform measurements with Transient Current/ Charge Technique. This has allowed studying the evolution of the signal in several microstrips detector samples irradiated at fluences covering the range expected in the ATLAS Semiconductor Tracker. For a better understanding of these measurements a ...

  13. Superperiodic Feature on Silicon-Sputtered Highly Oriented Pyrolytic Graphite

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Superperiodic feature was observed by scanning tunneling microscopy (STM) on the surface of highly oriented pyrolyticlattice constant is 7.03 nm. For the superlattice, the observed boundaries between the superlattice and the normal graphiteareas were zigzag, which was in good agreement with the result predicted theoretically. In addition, the observed latticeconstants varied slightly in the superperiodic feature area. This implies the role of intralayer strain in the formation of theobserved superlattice on the graphite surface.

  14. Technological development for super-high efficiency solar cells. Technological development for super-high efficiency singlecrystalline silicon solar cells (super-high efficiency singlecrystalline Si solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Chokokoritsu tankessho silicon taiyo denchi no gijutsu kaihatsu (chokokoritsu tankessho silicon taiyo denchi cell no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development of super-high efficiency singlecrystalline silicon solar cells in fiscal 1994. (1) On development of high-performance light receiving layer, the fine electrode for receiving surfaces was designed to reduce serial resistance, and the high-quality oxide passivation film was studied to reduce surface recombination velocity. (2) On development of forming technology of back heterojunction, the high-quality cell with B-doped fine crystalline Si film on its back was studied by heat treatment of the fine crystalline Si film, and the cell structure with high back reflectance of light was also studied. (3) On analysis for high-efficiency cells, the relation between the back recombination velocity at the interface between p-type substrate and back passivation film, and the internal collection efficiency as probe light was injected from the back, was calculated by numerical simulation. As a result, the cell back recombination velocity could be evaluated by measuring the spectral internal collection efficiency to back injection. 15 figs., 6 tabs.

  15. Engineering a Scalable High Quality Graph Partitioner

    CERN Document Server

    Holtgrewe, Manuel; Schulz, Christian

    2009-01-01

    We describe an approach to parallel graph partitioning that scales to hundreds of processors and produces a high solution quality. For example, for many instances from Walshaw's benchmark collection we improve the best known partitioning. We use the well known framework of multi-level graph partitioning. All components are implemented by scalable parallel algorithms. Quality improvements compared to previous systems are due to better prioritization of edges to be contracted, better approximation algorithms for identifying matchings, better local search heuristics, and perhaps most notably, a parallelization of the FM local search algorithm that works more locally than previous approaches.

  16. High-resolution photoinduced transient spectroscopy of neutron irradiated bulk silicon

    CERN Document Server

    Kozlowski, R; Nossarzhevska, E

    2002-01-01

    High-resolution photoinduced transient spectroscopy has been employed in a study on the formation of defects in bulk silicon due to 1 MeV neutron irradiation. Apart from divacancies in various charge states, complexes involving interstitial carbon and oxygen were revealed. The defect structure of float zone and Czochralski-grown material exposed to fluences of 2x10 sup 1 sup 4 and 6.75x10 sup 1 sup 4 cm sup - sup 2 is compared.

  17. High-contrast gratings for long-wavelength laser integration on silicon

    Science.gov (United States)

    Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

    2014-02-01

    Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

  18. An improved PIN photodetector with integrated JFET on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, Gian-Franco [Dipartimento di Informatica e Telecomunicazioni, Universita di Trento, Via Sommarive 14, I-38050 Povo (Trento) (Italy); Piemonte, Claudio [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Boscardin, Maurizio [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Gregori, Paolo [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Zorzi, Nicola [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Fazzi, Alberto [Dipartimento di Ingegneria Nucleare, Politecnico di Milano, 20133 Milan (Italy); Pignatel, Giorgio U. [Dipartimento di Ingegneria Elettronica e Informazione, Universita di Perugia, 06125 Perugia (Italy)]. E-mail: giorgio.pignatel@diei.unipg.it

    2006-11-01

    We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed.

  19. Silicon oxide based high capacity anode materials for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Haixia; Han, Yongbong; Masarapu, Charan; Anguchamy, Yogesh Kumar; Lopez, Herman A.; Kumar, Sujeet

    2017-03-21

    Silicon oxide based materials, including composites with various electrical conductive compositions, are formulated into desirable anodes. The anodes can be effectively combined into lithium ion batteries with high capacity cathode materials. In some formulations, supplemental lithium can be used to stabilize cycling as well as to reduce effects of first cycle irreversible capacity loss. Batteries are described with surprisingly good cycling properties with good specific capacities with respect to both cathode active weights and anode active weights.

  20. Dispersion engineered high-Q silicon Nitride Ring-Resonators via Atomic Layer Deposition

    CERN Document Server

    Riemensberger, Johann; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-01-01

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition (ALD). Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. All results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  1. High temperature study of flexible silicon-on-insulator fin field-effect transistors

    KAUST Repository

    Diab, Amer El Hajj

    2014-09-29

    We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry\\'s most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

  2. MICROSTRUCTURING OF SILICON SINGLE CRYSTALS BY FIBER LASER IN HIGH-SPEED SCANNING MODE

    Directory of Open Access Journals (Sweden)

    T. A. Trifonova

    2015-11-01

    Full Text Available Subject of Study. The surface structure of the silicon wafers (substrate with a thermally grown silicon dioxide on the surface (of SiO2/Si is studied after irradiation by pulse fiber laser of ILI-1-20 type. The main requirements for exposure modes of the system are: the preservation of the integrity of the film of silicon dioxide in the process of microstructuring and the absence of interference of surrounding irradiated areas of the substrate. Method. Studies were carried out on silicon wafers KEF-4,5 oriented in the crystallographic plane (111 with the source (natural silicon dioxide (SiO2 with thickness of about 4 nm, and SiO2 with 40 nm and 150 nm thickness, grown by thermal oxidation in moist oxygen. Also, wafers KHB-10 oriented in the plane (100 with 500 nm thickness of thermal oxide were investigated. Irradiation of SiO2/Si system was produced by laser complex based on ytterbium fiber pulse laser ILI-1-20. Nominal output power of the laser was 20 W, and the laser wavelength was λ = 1062 nm. Irradiation was carried out by a focused beam spot with a diameter of 25 microns and a pulse repetition rate of 99 kHz. The samples with 150 nm and 40 nm thickness of SiO2 were irradiated at a power density equal to 1,2·102 W/cm2, and the samples of SiO2 with 500 nm thickness were irradiated at a power density equal to 2,0·102 W/cm2. Scanning was performed using a two-axis Coordinate Scanning Device based on VM2500+ drives with control via a PC with the software package "SinMarkTM." Only one scan line was used at the maximum speed of the beam equal to 8750 mm/s. Morphology control of the irradiated samples was conducted by an optical microscope ZeissA1M with high-resolution CCD array. A scanning probe microscope Nanoedicator of the NT-MDT company was used for structural measurements. Main Results. It has been shown that at a single exposure of high-frequency pulsed laser radiation on SiO2/Si system, with maintaining the integrity of the SiO2 film

  3. High current density stability of ohmic contacts to silicon carbide

    Science.gov (United States)

    Downey, Brian P.

    The materials properties of SiC, such as wide bandgap, high breakdown electric field, and good thermal conductivity, make it an appealing option for high temperature and high power applications. The replacement of Si devices with SiC components could lead to a reduction in device size, weight, complexity, and cooling requirements along with an increase in device efficiency. One area of concern under high temperature or high current operation is the stability of the ohmic contacts. Ohmic contact degradation can cause an increase in parasitic resistance, which can diminish device performance. While contact studies have primarily focused on the high temperature stability of ohmic contacts to SiC, different failure mechanisms may arise under high current density stressing due to the influence of electromigration. In addition, preferential degradation may occur at the anode or cathode due to the directionality of current flow, known as a polarity effect. The failure mechanisms of ohmic contacts to p-type SiC under high current density stressing are explored. Complementary materials characterization techniques were used to analyze contact degradation, particularly the use of cross-sections prepared by focused ion beam for imaging using field emission scanning electron microscopy and elemental analysis using Auger electron spectroscopy. Initially the degradation of commonly studied Ni and Al-based contacts was investigated under continuous DC current. The contact metallization included a bond pad consisting of a TiW diffusion barrier and thick Au overlayer. The Ni contacts were found to degrade due to the growth of voids within the ohmic contact layer, which were initially produced during the high temperature Ni/SiC ohmic contact anneal. The Al-based contacts degraded due to the movement of Al from the ohmic contact layer to the surface of the Au bond pad, and the movement of Au into the ohmic contact layer from the bond pad. The inequality of Al and Au fluxes generated

  4. High-performance silicon photonics technology for telecommunications applications.

    Science.gov (United States)

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

    2014-04-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

  5. Efficient continuous-wave nonlinear frequency conversion in high-Q Gallium Nitride photonic crystal cavities on Silicon

    CERN Document Server

    Mohamed, Mohamed Sabry; Carlin, Jean-François; Minkov, Momchil; Gerace, Dario; Savona, Vincenzo; Grandjean, Nicolas; Galli, Matteo; Houdré, Romuald

    2016-01-01

    We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitation. Optimized two-dimensional PhC cavities with augmented far-field coupling have been characterized with quality factors as high as 4.4$\\times10^{4}$, approaching the computed theoretical values. The strong enhancement in light confinement has enabled efficient SHG, achieving normalized conversion efficiency of 2.4$\\times10^{-3}$ $W^{-1}$, as well as simultaneous THG. SHG emission power of up to 0.74 nW has been detected without saturation. The results herein validate the suitability of gallium nitride for integrated nonlinear optical processing.

  6. Theory of High Frequency Rectification by Silicon Crystals

    Science.gov (United States)

    Bethe, H. A.

    1942-10-29

    The excellent performance of British "red dot" crystals is explained as due to the knife edge contact against a polished surface. High frequency rectification depends critically on the capacity of the rectifying boundary layer of the crystal, C. For high conversion efficiency, the product of this capacity and of the "forward" (bulk) resistance R {sub b} of the crystal must be small. For a knife edge, this product depends primarily on the breadth of the knife edge and very little upon its length. The contact can therefore have a rather large area which prevents burn-out. For a wavelength of 10 cm. the computations show that the breadth of the knife edge should be less than about 10 {sup -3} cm. For a point contact the radius must be less than 1.5 x 10 {sup -3} cm. and the resulting small area is conducive to burn-out. The effect of "tapping" is probably to reduce the area of contact. (auth)

  7. High Quality Virtual Reality for Architectural Exhibitions

    DEFF Research Database (Denmark)

    Kreutzberg, Anette

    2016-01-01

    This paper will summarise the findings from creating and implementing a visually high quality Virtual Reality (VR) experiment as part of an international architecture exhibition. It was the aim to represent the architectural spatial qualities as well as the atmosphere created from combining natural...... and artificial lighting in a prominent not yet built project. The outcome is twofold: Findings concerning the integration of VR in an exhibition space and findings concerning the experience of the virtual space itself. In the exhibition, an important aspect was the unmanned exhibition space, requiring the VR...... experience to be self-explanatory. Observations of different visitor reactions to the unmanned VR experience compared with visitor reactions at guided tours with personal instructions are evaluated. Data on perception of realism, spatial quality and light in the VR model were collected with qualitative...

  8. High efficiency back-contact back-junction thin-film monocrystalline silicon solar cells from the porous silicon process

    Science.gov (United States)

    Haase, F.; Kajari-Schröder, S.; Brendel, R.

    2013-11-01

    This work demonstrates the fabrication of a 45 μm thick back-contact back-junction thin-film monocrystalline silicon solar cell from the porous silicon process with an energy conversion efficiency of 18.9%. We demonstrate an efficiency improvement of 5.4% absolute compared to our prior record of 13.5% for back-contact back-junction thin-film monocrystalline silicon solar cells. This increase in efficiency is achieved by reducing the recombination at the base contact using a back surface field and by increasing the generation with a front texture. We investigate the loss mechanisms in the cell using finite element simulations. A free energy loss analysis based on experiments and simulations determines the dominating loss mechanisms. The efficiency loss by base recombination is 0.8% absolute and the loss by base contact recombination is 0.5% absolute in the 18.9% efficiency cell.

  9. Thin tantalum-silicon-oxygen/tantalum-silicon-nitrogen films as high-efficiency humidity diffusion barriers for solar cell encapsulation

    Energy Technology Data Exchange (ETDEWEB)

    Heuer, H. [Institut fuer Halbleiter-und Mikrosystemtechnik (IHM) Technische Universitaet Dresden, Helmholtzstrasse 10, 01062 Dresden (Germany)]. E-mail: Henning.Heuer@izfp-d.fraunhofer.de; Wenzel, C. [Institut fuer Halbleiter-und Mikrosystemtechnik (IHM) Technische Universitaet Dresden, Helmholtzstrasse 10, 01062 Dresden (Germany); Herrmann, D. [Institut fuer Halbleiter-und Mikrosystemtechnik (IHM) Technische Universitaet Dresden, Helmholtzstrasse 10, 01062 Dresden (Germany); Zentrum fuer Sonnenenergie-und Wasserstoff-Forschung (ZSW) Industriestrasse 6, 70565 Stuttgart (Germany); Huebner, R. [Institut fuer Halbleiter-und Mikrosystemtechnik (IHM) Technische Universitaet Dresden, Helmholtzstrasse 10, 01062 Dresden (Germany); Leibniz Institut fuer Festkoerper-und Werkstoffforschung Dresden (IFW) Helmholtzstrasse 20, 01069, Dresden (Germany); Zhang, Z.L. [Institut fuer Halbleiter-und Mikrosystemtechnik (IHM) Technische Universitaet Dresden, Helmholtzstrasse 10, 01062 Dresden (Germany); Max-Planck-Gesellschaft fuer Metallforschung (MPI) Heisenbergstrasse 3, 70569 Stuttgart (Germany); Bartha, J.W. [Institut fuer Halbleiter-und Mikrosystemtechnik (IHM) Technische Universitaet Dresden, Helmholtzstrasse 10, 01062 Dresden (Germany)

    2006-12-05

    Flexible thin-film solar cells require flexible encapsulation to protect the copper-indium-2 selenide (CIS) absorber layer from humidity and aggressive environmental influences. Tantalum-silicon-based diffusion barriers are currently a favorite material to prevent future semiconductor devices from copper diffusion. In this work tantalum-silicon-nitrogen (Ta-Si-N) and tantalum-silicon-oxygen (Ta-Si-O) films were investigated and optimized for thin-film solar cell encapsulation of next-generation flexible solar modules. CIS solar modules were coated with tantalum-based barrier layers. The performance of the thin-film barrier encapsulation was determined by measuring the remaining module efficiency after a 1000 h accelerated aging test. A significantly enhanced stability against humidity diffusion in comparison to non-encapsulated modules was reached with a reactively sputtered thin-film system consisting of 250 nm Ta-Si-O and 15 nm Ta-Si-N.

  10. Unusually High and Anisotropic Thermal Conductivity in Amorphous Silicon Nanostructures.

    Science.gov (United States)

    Kwon, Soonshin; Zheng, Jianlin; Wingert, Matthew C; Cui, Shuang; Chen, Renkun

    2017-03-28

    Amorphous Si (a-Si) nanostructures are ubiquitous in numerous electronic and optoelectronic devices. Amorphous materials are considered to possess the lower limit to the thermal conductivity (κ), which is ∼1 W·m(-1) K(-1) for a-Si. However, recent work suggested that κ of micrometer-thick a-Si films can be greater than 3 W·m(-1) K(-1), which is contributed to by propagating vibrational modes, referred to as "propagons". However, precise determination of κ in a-Si has been elusive. Here, we used structures of a-Si nanotubes and suspended a-Si films that enabled precise in-plane thermal conductivity (κ∥) measurement within a wide thickness range of 5 nm to 1.7 μm. We showed unexpectedly high κ∥ in a-Si nanostructures, reaching ∼3.0 and 5.3 W·m(-1) K(-1) at ∼100 nm and 1.7 μm, respectively. Furthermore, the measured κ∥ is significantly higher than the cross-plane κ on the same films. This unusually high and anisotropic thermal conductivity in the amorphous Si nanostructure manifests the surprisingly broad propagon mean free path distribution, which is found to range from 10 nm to 10 μm, in the disordered and atomically isotropic structure. This result provides an unambiguous answer to the century-old problem regarding mean free path distribution of propagons and also sheds light on the design and performance of numerous a-Si based electronic and optoelectronic devices.

  11. Epitaxial silicon and germanium on buried insulator heterostructures and devices

    Science.gov (United States)

    Bojarczuk, N. A.; Copel, M.; Guha, S.; Narayanan, V.; Preisler, E. J.; Ross, F. M.; Shang, H.

    2003-12-01

    Future microelectronics will be based upon silicon or germanium-on-insulator technologies and will require an ultrathin (<10 nm), flat silicon or germanium device layer to reside upon an insulating oxide grown on a silicon wafer. The most convenient means of accomplishing this is by epitaxially growing the entire structure on a silicon substrate. This requires a high quality crystalline oxide and the ability to epitaxially grow two dimensional, single crystal films of silicon or germanium on top of this oxide. We describe a method based upon molecular beam epitaxy and solid-phase epitaxy to make such structures and demonstrate working field-effect transistors on germanium-on-insulator layers.

  12. Performance evaluation of a very high resolution small animal PET imager using silicon scatter detectors

    Science.gov (United States)

    Park, Sang-June; Rogers, W. Leslie; Huh, Sam; Kagan, Harris; Honscheid, Klaus; Burdette, Don; Chesi, Enrico; Lacasta, Carlos; Llosa, Gabriela; Mikuz, Marko; Studen, Andrej; Weilhammer, Peter; Clinthorne, Neal H.

    2007-05-01

    A very high resolution positron emission tomography (PET) scanner for small animal imaging based on the idea of inserting a ring of high-granularity solid-state detectors into a conventional PET scanner is under investigation. A particularly interesting configuration of this concept, which takes the form of a degenerate Compton camera, is shown capable of providing sub-millimeter resolution with good sensitivity. We present a Compton PET system and estimate its performance using a proof-of-concept prototype. A prototype single-slice imaging instrument was constructed with two silicon detectors 1 mm thick, each having 512 1.4 mm × 1.4 mm pads arranged in a 32 × 16 array. The silicon detectors were located edgewise on opposite sides and flanked by two non-position sensitive BGO detectors. The scanner performance was measured for its sensitivity, energy, timing, spatial resolution and resolution uniformity. Using the experimental scanner, energy resolution for the silicon detectors is 1%. However, system energy resolution is dominated by the 23% FWHM BGO resolution. Timing resolution for silicon is 82.1 ns FWHM due to time-walk in trigger devices. Using the scattered photons, time resolution between the BGO detectors is 19.4 ns FWHM. Image resolution of 980 µm FWHM at the center of the field-of-view (FOV) is obtained from a 1D profile of a 0.254 mm diameter 18F line source image reconstructed using the conventional 2D filtered back-projection (FBP). The 0.4 mm gap between two line sources is resolved in the image reconstructed with both FBP and the maximum likelihood expectation maximization (ML-EM) algorithm. The experimental instrument demonstrates sub-millimeter resolution. A prototype having sensitivity high enough for initial small animal images can be used for in vivo studies of small animal models of metabolism, molecular mechanism and the development of new radiotracers.

  13. Highly robust silicon nanowire/graphene core-shell electrodes without polymeric binders

    Science.gov (United States)

    Lee, Sang Eon; Kim, Han-Jung; Kim, Hwanjin; Park, Jong Hyeok; Choi, Dae-Geun

    2013-09-01

    A large theoretical charge storage capacity along with a low discharge working potential renders silicon a promising anode material for high energy density lithium ion batteries. However, up to 400% volume expansion during charge-discharge cycling coupled with a low intrinsic electronic conductivity causes pulverization and fracture, thus inhibiting silicon's widespread use in practical applications. We report herein on a low cost approach to fabricate hybrid silicon nanowire (SiNW)/graphene nanostructures that exhibit enhanced cycle performance with the capability of retaining more than 90% of their initial capacity after 50 cycles. We also demonstrate the use of hot-pressing in the absence of any common polymer binder such as PVDF to bind the hybrid structure to the current collector. The applied heat and pressure ensure strong adhesion between the SiNW/graphene nano-composite and current collector. This facile yet strong binding method is expected to find use in the further development of polymer-binder free anodes for lithium ion batteries.A large theoretical charge storage capacity along with a low discharge working potential renders silicon a promising anode material for high energy density lithium ion batteries. However, up to 400% volume expansion during charge-discharge cycling coupled with a low intrinsic electronic conductivity causes pulverization and fracture, thus inhibiting silicon's widespread use in practical applications. We report herein on a low cost approach to fabricate hybrid silicon nanowire (SiNW)/graphene nanostructures that exhibit enhanced cycle performance with the capability of retaining more than 90% of their initial capacity after 50 cycles. We also demonstrate the use of hot-pressing in the absence of any common polymer binder such as PVDF to bind the hybrid structure to the current collector. The applied heat and pressure ensure strong adhesion between the SiNW/graphene nano-composite and current collector. This facile yet strong

  14. Thick silicon growth techniques

    Science.gov (United States)

    Bates, H. E.; Mlavsky, A. I.; Jewett, D. N.

    1973-01-01

    Hall mobility measurements on a number of single crystal silicon ribbons grown from graphite dies have shown some ribbons to have mobilities consistent with their resistivities. The behavior of other ribbons appears to be explained by the introduction of impurities of the opposite sign. Growth of a small single crystal silicon ribbon has been achieved from a beryllia dia. Residual internal stresses of the order of 7 to 18,000 psi have been determined to exist in some silicon ribbon, particularly those grown at rates in excess of 1 in./min. Growth experiments have continued toward definition of a configuration and parameters to provide a reasonable yield of single crystal ribbons. High vacuum outgassing of graphite dies and evacuation and backfilling of growth chambers have provided significant improvements in surface quality of ribbons grown from graphite dies.

  15. Analysis of high efficiency back point contact silicon solar cells

    Science.gov (United States)

    Luque, Antonio

    1988-01-01

    A model has been developed for the analysis of Back Point-Contact (BPC) cells under variable injection level. The analysis has been applied to an experimental cell from Stanford University to allow the extraction of the recombination parameters of this cell. While the bulk SRH recombination and the recombination in the surface and in the emitters are those expected, the Auger constant takes a higher value (2.1 × 10 -30 cm 6/s), than the one usually accepted, and in agreement with the measurements by the Stanford group, for the carrier density involved here. The analysis indicates that best efficiency results are obtained with cells with finely designed emitter dots and well passivated surfaces, made on high resistivity substrates, leading to an upper limit of efficiency obtained at 20 W/cm 2 of about 30.4%. If our technology prevents us from a fine dot delineation (below 5-10 μm) then the highest efficiency is to be expected from the more conventional Interdigitated Back Contact cells with a limit (with our fitted Auger constant) of about 30%. Finally, if the commonly accepted value of the Auger constant (3.8 × 10 -31 cm 6/s) is used this limit is obtained at 50 W/cm 2 and is of 33.1% with a strongly idealized cell. All the efficiencies are at 25°C.

  16. Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

    Science.gov (United States)

    Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

    2016-01-15

    The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively.

  17. High Temperature All Silicon-Carbide (SiC) DC Motor Drives for Venus Exploration Vehicles Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project seeks to prove the feasibility of creating high-temperature silicon-carbide (SiC) based motor drives for...

  18. On-chip high-power porous silicon lithium ion batteries with stable capacity over 10000 cycles (Presentation Recording)

    Science.gov (United States)

    Westover, Andrew S.; Freudiger, Daniel; Gani, Zarif; Share, Keith; Oakes, Landon; Carter, Rachel E.; Pint, Cary L.

    2015-09-01

    We demonstrate the operation of a graphene-passivated on-chip porous silicon material as a high rate lithium ion battery anode with over 50x power density and 100x energy density improvement compared to identically prepared on-chip porous silicon supercapacitors. We demonstrate this Faradaic storage behavior to occur at fast charging rates (1-10 mA/cm2) where lithium locally intercalates into the nanoporous silicon, but not underlying bulk silicon material. This prevents the degradation and poor cycling performance that is commonly observed from deep storage in bulk silicon materials. As a result, this device exhibits cycling performance that exceeds 10,000 cycles with capacity above 0.1 mAh/cm2, without notable capacity fade. This work demonstrates a practical route toward high power, high energy, and long lifetime all-silicon on-chip storage systems relevant toward integration of energy storage into electronics, photovoltaics, and other silicon-based technology.

  19. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Science.gov (United States)

    Lee, Hyoung-Rae; Park, Jea-Gun

    2014-10-01

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage ( V th ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO X distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O2. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  20. Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G. A., E-mail: kachurin@isp.nsc.ru; Cherkova, S. G.; Volodin, V. A.; Marin, D. V. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Deutschmann, M. [Laser Zentrum Hannover (Germany)

    2008-02-15

    The effect of high-power nanosecond (20 ns) and femtosecond (120 fs) laser pulses on silicon nanostructures produced by ion-beam-assisted synthesis in SiO{sub 2} layers or by deposition onto glassy substrates is studied. Nanosecond annealing brings about a photoluminescence band at about 500 mn, with the intensity increasing with the energy and number of laser pulses. The source of the emission is thought to be the clusters of Si atoms segregated from the oxide. In addition, the nanosecond pulses allow crystallization of amorphous silicon nanoprecipitates in SiO{sub 2}. Heavy doping promotes crystallization. The duration of femtosecond pulses is too short for excess Si to be segregated from SiO{sub 2}. At the same time, such short pulses induce crystallization of Thin a-Si films on glassy substrates. The energy region in which crystallization is observed for both types of pulses allows short-term melting of the surface layer.

  1. A new ethylene glycol-silane monolayer for highly-specific DNA detection on Silicon Chips

    Science.gov (United States)

    Carrara, Sandro; Cavallini, Andrea; Maruyama, Yuki; Charbon, Edoardo; De Micheli, Giovanni

    2010-11-01

    Monolayer thin films with ethylene-glycol function onto gold surfaces by using thiols have been extensively investigated. They have been proposed as precursors for applications to bio-detection, where their hydrophilic character improves both specificity and sensitivity. The aim of this letter is to characterize ethylene-glycol monolayer precursors formed onto silicon chips by using silanes. The importance of the ethylene-glycol function is demonstrated by comparing with the well known 3-Aminopropyltriethoxysilane. The different nano-scale structures of the two precursor monolayers are investigated by using atomic force microscopy (AFM). Longer, wider, and deeper grooves were measured in the images acquired on 3-Aminopropyltriethoxysilane. Fluorescence investigation demonstrates that the presence of ethylene-glycol function improves target hybridization onto silicon chips, assuring highly-specific detection of DNA.

  2. Dielectric breakdown of MXB-71 phenolic and Sylgard 184/GMB silicone at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, R.T. Jr.; Beeson, P.M.

    1983-07-01

    High temperature electrical breakdown characteristics have been determined for MXB-71 phenolic and Sylgard 184/GMB silicone in air and nitrogen environments. The phenolic material is used for electronic case housings whereas the silicone is an encapsulant. The experiments were performed with constant electric fields (values ranging from 3 x 10/sup 3/ to 2.5 x 10/sup 4/ V/cm) applied to the samples while the temperature was increased at a rate of 10/sup 0/C/minute. The sample current until breakdown was determined. Results showed that breakdown occurred between 470 to 725/sup 0/C, and was principally dependent upon the material conductivity at time breakdown and the electric field. The breakdown temperature decreased with increasing electric field and decreased in an oxygen-containing environment. Materials postcured at 580 to 600/sup 0/C prior to electrical testing exhibited considerably lower breakdown temperatures at higher electric fields. Results suggest that breakdown occurred via thermal runaway.

  3. Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Wensheng, E-mail: yws118@gmail.com; Gu, Min, E-mail: mgu@swin.edu.au [Centre for Micro-Photonics, Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, Victoria 3122 (Australia); Tao, Zhikuo [College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Ong, Thiam Min Brian [Plasma Sources and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2015-03-02

    The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high light trapping within amorphous silicon layer.

  4. The effect of highly ionising particles on the CMS silicon strip tracker

    CERN Document Server

    Adam, W; Bergauer, T; Bouhali, O; Clerbaux, B; De Langhe, E; De Lentdecker, G; De Wolf, E; Friedl, M; Frühwirth, R; Hrubec, Josef; Krammer, Manfred; Pernicka, Manfred; Tasevsky, M; Waltenberger, W

    2005-01-01

    Inelastic nuclear collisions of hadrons incident on silicon sensors can generate secondary highly ionising particles (HIPs) and deposit as much energy within the sensor bulk as several hundred minimum ionising particles. The large signals generated by these 'HIP events' can momentarily saturate the APV25 front-end readout chip for the silicon strip tracker (SST) sub-detector of the compact muon solenoid (CMS) experiment, resulting in deadtime in the detector readout system. This paper presents studies of this phenomenon through simulation, laboratory measurements and dedicated beam tests. A proposed change to a front-end component to reduce the APV25 sensitivity to HIP events is also examined. The results are used to infer the expected effect on the performance of the CMS SST at the future large hadron collider. The induced inefficiencies are at the percent level and will have a negligible effect on the physics performance of the SST.

  5. High-yield synthesis of silicon carbide nanowires by solar and lamp ablation

    Science.gov (United States)

    Lu, Hai-bo; Chan, Benjamin C. Y.; Wang, Xiaolin; Tong Chua, Hui; Raston, Colin L.; Albu-Yaron, Ana; Levy, Moshe; Popowitz-Biro, Ronit; Tenne, Reshef; Feuermann, Daniel; Gordon, Jeffrey M.

    2013-08-01

    We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures—characterized by SEM, TEM, HRTEM, SAED, XRD and EDS—are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.

  6. Experimental setup for investigating silicon solid phase crystallization at high temperatures.

    Science.gov (United States)

    Schmidt, Thomas; Gawlik, Annett; Schneidewind, Henrik; Ihring, Andreas; Andrä, Gudrun; Falk, Fritz

    2013-07-15

    An experimental setup is presented to measure and interpret the solid phase crystallization of amorphous silicon thin films on glass at very high temperatures of about 800 °C. Molybdenum-SiO(2)-silicon film stacks were irradiated by a diode laser with a well-shaped top hat profile. From the relevant thermal and optical parameters of the system the temperature evolution can be calculated accurately. A time evolution of the laser power was applied which leads to a temperature constant in time in the center of the sample. Such a process will allow the observation and interpretation of solid phase crystallization in terms of nucleation and growth in further work.

  7. High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Masaki [Department of Materials Science and Engineering, Kyushu University, 6-10-1 Higashi-ku Fukuoka 812-8581 (Japan)]. E-mail: masaki@dera.zaiko.kyushu-u.ac.jp; Higashida, Kenji [Department of Materials Science and Engineering, Kyushu University, 6-10-1 Higashi-ku Fukuoka 812-8581 (Japan)

    2005-07-25

    Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals.

  8. Silicon Photonics for All-Optical Processing and High-Bandwidth-Density Interconnects

    Science.gov (United States)

    Ophir, Noam

    The first chapter of the thesis provides motivation for the integration of silicon photonic modules into compute systems and surveys some of the recent developments in the field. The second chapter then proceeds to detail a technical case study of silicon photonic microring-based WDM links' scalability and power efficiency for these chip I/O applications which could be developed in the intermediate future. The analysis, initiated originally for a workshop on optical and electrical board and rack level interconnects, looks into a detailed model of the optical power budget for such a link capturing both single-channel aspects as well as WDM-operation-related considerations which are unique for a microring physical characteristics. The third chapter, while continuing on the theme silicon photonic high bandwidth density links, proceeds to detail the first experimental demonstration and characterization of an on-chip spatial division multiplexing (SDM) scheme based on microrings for the multiplexing and demultiplexing functionalities. In the context of more forward looking optical network-on-chip environments, SDM-enabled WDM photonic interconnects can potentially achieve superior bandwidth densities per waveguide compared to WDM-only photonic interconnects. The microring-based implementation allows dynamic tuning of the multiplexing and demultiplexing characteristic of the system which allows operation on WDM grid as well device tuning to combat intra-channel crosstalk. The characterization focuses on the first reported power penalty measurements for on-chip silicon photonic SDM link showing minimal penalties achievable with 3 spatial modes concurrently operating on a single waveguide with 10-Gb/s data carried by each mode. The fourth, fifth, and sixth chapters shift in topic from the application of silicon photonics to communication links to the evolving use of silicon waveguides for nonlinear all-optical processing. Chapter four primarily introduces and motivates

  9. Edge sensitivity of “edgeless” silicon pad detectors measured in a high-energy beam

    Science.gov (United States)

    Perea Solano, B.; Abreu, M. C.; Avati, V.; Boccali, T.; Boccone, V.; Bozzo, M.; Capra, R.; Casagrande, L.; Chen, W.; Eggert, K.; Heijne, E.; Klauke, S.; Li, Z.; Mäki, T.; Mirabito, L.; Morelli, A.; Niinikoski, T. O.; Oljemark, F.; Palmieri, V. G.; Rato Mendes, P.; Rodrigues, S.; Siegrist, P.; Silvestris, L.; Sousa, P.; Tapprogge, S.; Trocmé, B.

    2005-09-01

    We report measurements in a high-energy beam of the sensitivity of the edge region in “edgeless” planar silicon pad diode detectors. The edgeless side of these rectangular diodes is formed by a cut and break through the contact implants. A large surface current on such an edge prevents the normal reverse biasing of this device above the full depletion voltage, but we have shown that the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at a low temperature. A pair of these edgeless silicon diode pad sensors was exposed to the X5 high-energy pion beam at CERN, to determine the edge sensitivity. The signal of the detector pair triggered a reference telescope made of silicon microstrip detector modules. The gap width between the edgeless sensors, determined using the tracks measured by the reference telescope, was then compared with the results of precision metrology. It was concluded that the depth of the dead layer at the diced edge is compatible with zero within the statistical precision of ±8 μm and systematic error of ±6 μm.

  10. Fabrication of high resolution and lightweight monocrystalline silicon x-ray mirrors

    Science.gov (United States)

    Riveros, Raul E.; Kolos, Linette D.; Mazzarella, James R.; McKeon, Kevin P.; Zhang, William W.

    2015-09-01

    Monocrystalline silicon as an x-ray mirror substrate material promises significant improvements over the x- ray mirror technologies used to date, since it is mechanically stiff, stress-free, highly thermally conductive, and widely commercially available. Producing highly accurate and lightweight x-ray mirrors from monocrystalline silicon requires a unique and specialized manufacturing process capable of producing mirrors quickly and cost effectively. The identification, development, and testing of this process is the focus of the work described in this proceeding. Monocrystalline silicon blocks were obtained, and a variety of processes (wire electro-discharge machining, etching, polishing) were applied to generate an accurate and stress-free cylindrical or Wolter-I mirror surface. The mirror surface is then sliced off at a thickness of mirror segment with mirror production process requires ~2 days to produce a mirror segment and is easily integrated into a cost-reducing parallel processing scheme. Presently, there is strong evidence that the mirror production process described in this paper will meet the stringent requirements of future x-ray missions.

  11. Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  12. High Quality Virtual Reality for Architectural Exhibitions

    DEFF Research Database (Denmark)

    Kreutzberg, Anette

    2016-01-01

    This paper will summarise the findings from creating and implementing a visually high quality Virtual Reality (VR) experiment as part of an international architecture exhibition. It was the aim to represent the architectural spatial qualities as well as the atmosphere created from combining natural...... and artificial lighting in a prominent not yet built project. The outcome is twofold: Findings concerning the integration of VR in an exhibition space and findings concerning the experience of the virtual space itself. In the exhibition, an important aspect was the unmanned exhibition space, requiring the VR...... and quantitative methods at two different occasions and setups after the exhibition, both showing a high degree of immersion and experience of reality....

  13. Silicon solar cells with high efficiencies. Final report; Silicium-Solarzellen mit hoechsten Wirkungsgraden. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wettling, W.; Knobloch, J.; Glunz, S.W.; Henninger, V.; Kamerewerd, F.J.; Koester, B.; Leimenstoll, A.; Schaeffer, E.; Schumacher, J.; Sterk, S.; Warta, W.

    1996-06-01

    In this report the basic activities for the development of the silicon high efficiency solar cell technology are described. The project had two main goals: (i) The improvement of efficiencies using a systematic optimization of all cell parameters and technology steps and (ii) the simplification of the technology towards the possibilities of an industrial production, keeping the cell efficiency at a high level. Starting from the LBSF technology, developed at Fraunhofer ISE, the reduction of all loss mechanisms led to efficiencies up to 22.5% on FZ-silicon. Using a modification of this technology efficiencies of up to 21.7% have been reached on Cz-silicon. Even after the reduction of the number of photolithographic steps from six to three efficiencies up to 21.6% on FZ- and 19.5% on Cz-silicon have been obtained. These are best values in an international comparison. (orig.) [Deutsch] In diesem Projektbericht werden grundlegende Arbeiten zur Entwicklung der Silicium-`Highefficiency`-Solarzellentechnologie beschrieben. Das Projekt hatte zwei Hauptziele: (i) Die Erhoehung der Wirkungsgrade durch eine systematische Optimierung aller Zellparameter und aller Technologieschritte und (ii) die Vereinfachung der Technologie unter Beibehaltung sehr hoher Wirkungsgrade mit dem Ziel einer Annaeherung an die Moeglichkeiten der Industriefertigung. Ausgehend von der im Fraunhofer ISE entwickelten LBSF-Technologie gelang es durch Reduzierung aller Verlustmechanismen, Wirkungsgrade bis zu 22.5% auf FZ-Silicium zu erreichen. Nach Anpassung der Technologie wurden auf Cz-Silicium Wirkungsgrade bis 21.7% erzielt. Ein von sechs auf drei Fotomaskenschritte reduzierter Prozess erzielte immerhin noch Werte bis 21.6% auf FZ- und 19.5% auf Cz-Material. Alle dieser Werte stellen im internationalen Vergleich Spitzenleistungen dar. (orig.)

  14. Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

    Science.gov (United States)

    Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

    2015-05-01

    We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

  15. Suggestions for writing high quality scientific papers

    Institute of Scientific and Technical Information of China (English)

    Marc Fisher

    2011-01-01

    @@ Writing a good scientific paper that will be accepted by a high quality journal requires careful planning and preparation.The process actually begins with the design and performance of the study to be reported upon in the paper.The main sections of the paper which include the introduction,methods,results and discussion are actually components of the planning and execution of the study to be reported.

  16. EULEB EUropean high quality Low Energy Buildings

    OpenAIRE

    2006-01-01

    ABSTRACT: The EULEB-Project is intended to supply information to architects and engineers throughout Europe and beyond it. Within the EU it will support the new Energy Directive on Buildings through providing design and engineering details of European public high quality buildings with low energy consumption. By providing a CD containing information on architecture, energy consumption and economical efficiency as well as the comfort of these innovative buildings in use, the lac...

  17. High quality transportation fuels from renewable feedstock

    Energy Technology Data Exchange (ETDEWEB)

    Lindfors, Lars Peter

    2010-09-15

    Hydrotreating of vegetable oils is novel process for producing high quality renewable diesel. Hydrotreated vegetable oils (HVO) are paraffinic hydrocarbons. They are free of aromatics, have high cetane numbers and reduce emissions. HVO can be used as component or as such. HVO processes can also be modified to produce jet fuel. GHG savings by HVO use are significant compared to fossil fuels. HVO is already in commercial production. Neste Oil is producing its NExBTL diesel in two plants. Production of renewable fuels will be limited by availability of sustainable feedstock. Therefore R and D efforts are made to expand feedstock base further.

  18. Development of high quality electron beam accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Kando, Masaki; Dewa, Hideki; Kotaki, Hideyuki; Kondo, Shuji; Hosokai, Tomonao; Kanazawa, Shuhei; Yokoyama, Takashi; Nakajima, Kazuhisa [Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Institute, Kizu, Kyoto (Japan)

    2000-03-01

    A design study on a high quality electron beam accelerator is described. This accelerator will be used for second generation experiments of laser wakefield acceleration, short x-ray generation, and other experiments of interaction of high intensity laser with an electron beam at Advanced Photon Research Center, Kansai Research Establishment, Japan Atomic Energy Research Institute. The system consists of a photocathode rf gun and a race-track microtron (RTM). To combine these two components, injection and extraction beamlines are designed employing transfer matrix and compute codes. A present status of the accelerator system is also presented. (author)

  19. Ultraviolet Plasmonic Aluminium Nanoparticles for Highly Efficient Light Incoupling on Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Yinan Zhang

    2016-05-01

    Full Text Available Plasmonic metal nanoparticles supporting localized surface plasmon resonances have attracted a great deal of interest in boosting the light absorption in solar cells. Among the various plasmonic materials, the aluminium nanoparticles recently have become a rising star due to their unique ultraviolet plasmonic resonances, low cost, earth-abundance and high compatibility with the complementary metal-oxide semiconductor (CMOS manufacturing process. Here, we report some key factors that determine the light incoupling of aluminium nanoparticles located on the front side of silicon solar cells. We first numerically study the scattering and absorption properties of the aluminium nanoparticles and the influence of the nanoparticle shape, size, surface coverage and the spacing layer on the light incoupling using the finite difference time domain method. Then, we experimentally integrate 100-nm aluminium nanoparticles on the front side of silicon solar cells with varying silicon nitride thicknesses. This study provides the fundamental insights for designing aluminium nanoparticle-based light trapping on solar cells.

  20. Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

    Directory of Open Access Journals (Sweden)

    Miao Tan

    2017-08-01

    Full Text Available We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i the work function of the transparent conductive oxide layer, (ii the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si interface, (iii the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H layer, and (iv the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

  1. Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

    Science.gov (United States)

    Tan, Miao; Zhong, Sihua; Wang, Wenjie; Shen, Wenzhong

    2017-08-01

    We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H) solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i) the work function of the transparent conductive oxide layer, (ii) the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) interface, (iii) the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H) layer, and (iv) the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT) counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

  2. High-conductivity silicon based spectrally selective plasmonic surfaces for sensing in the infrared region

    Science.gov (United States)

    Gorgulu, K.; Gok, A.; Yilmaz, M.; Topalli, K.; Okyay, A. K.

    2017-02-01

    Plasmonic perfect absorbers have found a wide range of applications in imaging, sensing, and light harvesting and emitting devices. Traditionally, metals are used to implement plasmonic structures. For sensing applications, it is desirable to integrate nanophotonic active surfaces with biasing and amplification circuitry to achieve monolithic low cost solutions. Commonly used plasmonic metals such as Au and Ag are not compatible with standard silicon complementary metal-oxide-semiconductor (CMOS) technology. Here we demonstrate plasmonic perfect absorbers based on high conductivity silicon. Standard optical lithography and reactive ion etching techniques were used for the patterning of the samples. We present computational and experimental results of surface plasmon resonances excited on a silicon surface at normal and oblique incidences. We experimentally demonstrate our absorbers as ultra-low cost, CMOS-compatible and efficient refractive index sensing surfaces. The experimental results reveal that the structure exhibits a sensitivity of around 11 000 nm/RIU and a figure of merit of up to 2.5. We also show that the sensing performance of the structure can be improved by increasing doping density.

  3. Silicon-rutile - an ultra-high pressure (UHP) mineral from an ophiolite

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Silicon(Si)-rutile separated from the Luobusa podiform chromitite in the Yarlung Zangbo ophiolite of southern Tibet is typically about 50 μm×50 μm×200 μm in size and consists mainly of SiO2 and TiO2. The average mineral formula is (Ti0.82Si0.18)O2. Powder X-ray diffraction data show that it is tetragonal in form, and the unit cell dimensions and other parameters are: a=4.591(2), c=2.946(2), v=62.09(5)3, c/a=0.6415, with a molar volume about 5% smaller than rutile (JCPDS, 21-1276). The Si4+ ions in silicon rutile are six-coordinated, and are substituted for Ti4+ in the rutile structural sites. The Si-rutile, along with other associated ultra-high minerals discovered in the chromitite, such as octahedral silicate, silicon-magnesium spinel (Si4+ ions are six-coordinated), diamond, and intergrown of SiO2 and FeO phases, probably originated from the transition zone or the lower mantle, and were brought to shallow levels beneath an oceanic spreading ridge by an upwelling superplume.

  4. Highly efficient luminescent solar concentrators based on earth-abundant indirect-bandgap silicon quantum dots

    Science.gov (United States)

    Meinardi, Francesco; Ehrenberg, Samantha; Dhamo, Lorena; Carulli, Francesco; Mauri, Michele; Bruni, Francesco; Simonutti, Roberto; Kortshagen, Uwe; Brovelli, Sergio

    2017-02-01

    Building-integrated photovoltaics is gaining consensus as a renewable energy technology for producing electricity at the point of use. Luminescent solar concentrators (LSCs) could extend architectural integration to the urban environment by realizing electrode-less photovoltaic windows. Crucial for large-area LSCs is the suppression of reabsorption losses, which requires emitters with negligible overlap between their absorption and emission spectra. Here, we demonstrate the use of indirect-bandgap semiconductor nanostructures such as highly emissive silicon quantum dots. Silicon is non-toxic, low-cost and ultra-earth-abundant, which avoids the limitations to the industrial scaling of quantum dots composed of low-abundance elements. Suppressed reabsorption and scattering losses lead to nearly ideal LSCs with an optical efficiency of η = 2.85%, matching state-of-the-art semi-transparent LSCs. Monte Carlo simulations indicate that optimized silicon quantum dot LSCs have a clear path to η > 5% for 1 m2 devices. We are finally able to realize flexible LSCs with performances comparable to those of flat concentrators, which opens the way to a new design freedom for building-integrated photovoltaics elements.

  5. High-efficiency nanostructured silicon solar cells on a large scale realized through the suppression of recombination channels.

    Science.gov (United States)

    Zhong, Sihua; Huang, Zengguang; Lin, Xingxing; Zeng, Yang; Ma, Yechi; Shen, Wenzhong

    2015-01-21

    Nanostructured silicon solar cells show great potential for new-generation photovoltaics due to their ability to approach ideal light-trapping. However, the nanofeatured morphology that brings about the optical benefits also introduces new recombination channels, and severe deterioration in the electrical performance even outweighs the gain in optics in most attempts. This Research News article aims to review the recent progress in the suppression of carrier recombination in silicon nanostructures, with the emphasis on the optimization of surface morphology and controllable nanostructure height and emitter doping concentration, as well as application of dielectric passivation coatings, providing design rules to realize high-efficiency nanostructured silicon solar cells on a large scale.

  6. High Efficiency Organic/Silicon-Nanowire Hybrid Solar Cells: Significance of Strong Inversion Layer

    Science.gov (United States)

    Yu, Xuegong; Shen, Xinlei; Mu, Xinhui; Zhang, Jie; Sun, Baoquan; Zeng, Lingsheng; Yang, Lifei; Wu, Yichao; He, Hang; Yang, Deren

    2015-11-01

    Organic/silicon nanowires (SiNWs) hybrid solar cells have recently been recognized as one of potentially low-cost candidates for photovoltaic application. Here, we have controllably prepared a series of uniform silicon nanowires (SiNWs) with various diameters on silicon substrate by metal-assisted chemical etching followed by thermal oxidization, and then fabricated the organic/SiNWs hybrid solar cells with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). It is found that the reflective index of SiNWs layer for sunlight depends on the filling ratio of SiNWs. Compared to the SiNWs with the lowest reflectivity (LR-SiNWs), the solar cell based on the SiNWs with low filling ratio (LF-SiNWs) has a higher open-circuit voltage and fill factor. The capacitance-voltage measurements have clarified that the built-in potential barrier at the LF-SiNWs/PEDOT:PSS interface is much larger than that at the LR-SiNWs/PEDOT one, which yields a strong inversion layer generating near the silicon surface. The formation of inversion layer can effectively suppress the carrier recombination, reducing the leakage current of solar cell, and meanwhile transfer the LF-SiNWs/PEDOT:PSS device into a p-n junction. As a result, a highest efficiency of 13.11% is achieved for the LF-SiNWs/PEDOT:PSS solar cell. These results pave a way to the fabrication of high efficiency organic/SiNWs hybrid solar cells.

  7. Spiral-path high-sensitivity silicon photonic wire molecular sensor with temperature-independent response.

    Science.gov (United States)

    Densmore, A; Xu, D-X; Janz, S; Waldron, P; Mischki, T; Lopinski, G; Delâge, A; Lapointe, J; Cheben, P; Lamontagne, B; Schmid, J H

    2008-03-15

    We demonstrate a new silicon photonic wire waveguide evanescent field (PWEF) sensor that exploits the strong evanescent field of the transverse magnetic mode of this high-index-contrast, submicrometer-dimension waveguide. High sensitivity is achieved by using a 2 mm long double-spiral waveguide structure that fits within a compact circular area of 150 microm diameter, facilitating compatibility with commercial spotting apparatus and the fabrication of densely spaced sensor arrays. By incorporating the PWEF sensor element into a balanced waveguide Mach-Zehnder interferometer circuit, a minimum detectable mass of approximately 10 fg of streptavidin protein is demonstrated with near temperature-independent response.

  8. Compact silica-on-silicon planar lightwave circuits for high speed optical signal processing

    Science.gov (United States)

    Callender, C. L.; Dumais, P.; Blanchetiere, C.; Jacob, S.; Ledderhof, C.; Smelser, C. W.; Yadav, K.; Albert, J.

    2012-02-01

    Silica-on-silicon planar lightwave circuit (PLC) technology is well established and provides a low loss and stable photonic device platform. However, limitations in size and integration of active components remain. Engineering of the layer structure in silica PLCs to achieve high-index contrast, compact device architectures and monolithically integrated optical nonlinearities is described. Modeling of properties of doped-silica layers provides a design strategy for optimization of waveguide loss and birefringence. Optical nonlinearities in poled silica layers have been demonstrated, and recent work to incorporate these into functional device structures and exploit them for high speed modulation is reported.

  9. Analysis of System Wide Distortion in an Integrated Power System Utilizing a High Voltage DC Bus and Silicon Carbide Power Devices

    Science.gov (United States)

    2007-06-01

    concentrated on the power supplied to a propulsion motor driven by an inverter with simulated silicon carbide switches. Theoretically, silicon ... carbide switches have the advantage of being able to withstand a very large blocking voltage and carry very large forward currents. Silicon carbide switches...are also very efficient due to their quick rise and fall times. Since silicon carbide switches can withstand high voltage differentials and switch

  10. The Silicon Photomultiplier for application to high-resolution Positron Emission Tomography

    Science.gov (United States)

    Herbert, D. J.; Moehrs, S.; D'Ascenzo, N.; Belcari, N.; Del Guerra, A.; Morsani, F.; Saveliev, V.

    2007-04-01

    Positron Emission Tomography (PET) for small animal studies requires high-resolution gamma cameras with high sensitivity. Traditionally, inorganic scintillators are used and, in recent times, coupled to position sensitive PMTs to achieve a higher resolution. Such PSPMTs are costly, operated at high voltage and have a relatively low packing fraction. However, their advantage, compared to current solid state photodetectors, is their high signal-to-noise ratio. The Silicon Photomultiplier (SiPM) is a silicon diode detector that shows great promise as a photodetector for scintillators and hence application in nuclear medicine imaging applications. The microcell MRS (Metal-Resistor-Semiconductor) structure of the SiPM leads to a self-quenching, Geiger-mode avalanche photodiode (GAPD), that produces a large gain (5×105) at low bias voltage (50 V) and proportional output for moderate photon flux. Such a compact silicon detector, with a performance similar to a PMT, is obviously well disposed to being developed into a close-packed array in order to have a position-sensitive detection surface. We propose a miniature, high-resolution camera for a small-animal PET imaging system that is based on such an array of SiPM. The design is based upon the classic Anger camera principle; each detector module consists of a continuous slab of scintillator, viewed by a matrix of SiPM. A detector head of 4×4 cm2 in area is proposed, constructed from three such modules of the continuous camera described above. The stacked layers would give the system intrinsic depth of interaction (DOI) information. A summary of measured SiPM performance and results of a simulation of the proposed camera, using the Monte Carlo package GEANT4, are presented. It is shown that using three layers of 5 mm thick LSO, gives an efficiency of 68% with maximum count rates in the front layers. Intrinsic spatial resolution of system.

  11. High quality factor indium oxide mechanical microresonators

    Energy Technology Data Exchange (ETDEWEB)

    Bartolomé, Javier, E-mail: j.bartolome@fis.ucm.es; Cremades, Ana; Piqueras, Javier [Department of Materials Physics, Faculty of Physics, Universidad Complutense de Madrid, 28040 Madrid (Spain)

    2015-11-09

    The mechanical resonance behavior of as-grown In{sub 2}O{sub 3} microrods has been studied in this work by in-situ scanning electron microscopy (SEM) electrically induced mechanical oscillations. Indium oxide microrods grown by a vapor–solid method are naturally clamped to an aluminum oxide ceramic substrate, showing a high quality factor due to reduced energy losses during mechanical vibrations. Quality factors of more than 10{sup 5} and minimum detectable forces of the order of 10{sup −16} N/Hz{sup 1/2} demonstrate their potential as mechanical microresonators for real applications. Measurements at low-vacuum using the SEM environmental operation mode were performed to study the effect of extrinsic damping on the resonators behavior. The damping coefficient has been determined as a function of pressure.

  12. High-Temperature Permittivity and Data-Mining of Silicon Dioxide at GHz Band

    Institute of Scientific and Technical Information of China (English)

    YUAN Jie; WEN Bo; HOU Zhi-Ling; LU Ming-Ming; CAO Wen-Qiang; BA Chuan; FANG Xiao-Yong; CAO Mao-Sheng

    2012-01-01

    The high-temperature permittivity of quartz fibre-reinforced silicon dioxide (SiO2/SiO2 ) nano-composites is studied on the basis of the multi-scale theoretical model.We obtain the permittivity of the SiO2/SiO2 at high temperature,which is dependent on the temperature by data-mining.The result shows that the permittivity and loss tangent obtained by data-mining are well consistent with the measured ones.The high-temperature permittivity can be well predicted for SiO2/SiO2 by the as-proposed model and the data-mining method.%The high-temperature permittivity of quartz fibre-reinforced silicon dioxide (SiO2/SiO2) nano-composites is studied on the basis of the multi-scale theoretical model. We obtain the permittivity of the SiO2/SiO2 at high temperature, which is dependent on the temperature by data-mining. The resuJt shows that the permittivity and loss tangent obtained by data-mining are well consistent with the measured ones. The high-temperature permittivity can be well predicted for SiO2/SiO2 by the as-proposed model and the data-mining method.

  13. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Transboundary High School Air Quality Education Program

    Energy Technology Data Exchange (ETDEWEB)

    Hinkle, I. [Cascadia AirNET, Bellingham, WA (United States)

    2004-04-07

    A study was conducted to determine why the air quality in the Cascadia bioregion is declining. The Cascadia bioregion extends from the Alaska border in northern British Columbia to the northern coast of California and is bounded by the Pacific Ocean and the Cascade Mountains. The region shares resources such as air, water, soil migration, wildlife, human power, flora, and aquatic life. It has one of the fastest growing populations in Canada and the United States. AirNet is a school-based program that was established to promote environmental cooperation between the two countries and to increase citizen understanding and participation in protecting air quality and biodiversity. The objective of AirNet is to increase trans-border cooperation by non-governmental organizations, governments, scientists, citizens and educational facilities. AirNet shares biomonitoring data world-wide. The 5 components of the AirNet program are: (1) a teacher training workshop, (2) classroom presentations by AirNet staff on general air quality issues, (3) a presentation on lichen classification and identification, (4) a field trip with AirNet personnel to gather biomonitoring data, and (5) a follow-up field trip to use the PAX Air Quality Analyzer which analyzes biomonitoring data for carbon monoxide, carbon dioxide, ozone, sulphur dioxide, nitrogen dioxide, and particulates. PAX can also analyze wind speed, wind direction, temperature, humidity and barometric pressure. Results from a lichen study at Port Moody High School in British Columbia indicated high levels of sulphur dioxide in areas of lichen absence. In response, the students requested that the industrial facility upwind from the area cover its solid sulphur piles. The study raised awareness of bioindicators for air and applied student Internet knowledge and capability to real-life science. tabs., figs.

  15. Surface photovoltage method for the quality control of silicon epitaxial layers on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Yaremchuk, A. F.; Starkov, A. V.; Zaikin, A. V., E-mail: lynch0000@gmail.com [National Rsearch University MIET (Russian Federation); Alekseev, A. V. [ZAO “Telekom-STV” (Russian Federation); Sokolov, E. M. [ZAO “Epiel” (Russian Federation)

    2014-12-15

    The surface photovoltage method is used to study “silicon-on-sapphire” epitaxial layers with a thickness of 0.3–0.6 μm, which are used to fabricate p-channel MOS (metal—oxide-semiconductor) transistors with improved radiation hardness. It is shown that the manner in which the photoconductivity of the epitaxial layer decays after the end of a light pulse generated by a light-emitting diode (wavelength ∼400 nm) strongly depends on the density of structural defects in the bulk of the structure. This enables control over how a “silicon-on-sapphire” structure is formed to provide the manufacturing of MOS structures with optimal operating characteristics.

  16. Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

    Institute of Scientific and Technical Information of China (English)

    Qiao Ming; Zhuang Xiang; Wu Li-Juan; Zhang Wen-Tong; Wen Heng-Juan; Zhang Bo; Li Zhao-Ji

    2012-01-01

    Based on the theoretical and experimental investigation of a thin silicon layer (TSL) with linear variable doping (LVD) and further research on the TSL LVD with a multiple step field plate (MSFP),a breakdown voltage (BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator (SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field (ENDIF),from which the reduced surface field (RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect but the problem of the high voltage interconnection (HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET (nLDMOS) with MSFP is realized.The experimental breakdown voltage (BV) and specific on-resistance (Ron,sp) of the TSL LVD SOI device are 694 V and 21.3 Ω.mm2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.

  17. High-aspect-ratio silicon-cell metallization technical status report. Final report

    Energy Technology Data Exchange (ETDEWEB)

    1982-01-01

    Two features of the silicon concentrator solar cell are addressed which affect output at high concentration levels. The first is the development of narrow but high electroplated grid lines with improved conductivity. The object is a reduction in cell series resistance without increase in shadowing. This goal is accomplished by electroplating through a thick photo resist mask to produce lines .7 mil wide by .7 mil high. Advance pulse plating techniques are combined with pure silver plating baths to produce a deposit conductivity equal to the bulk silver conductivity (a 1.5 to 2 X improvement over conventional silver plating). The second feature is a double diffused selectively textured front surface. This development employs a deep diffusion in the silicon under the grid lines. Only the non grid line open area is selectively texture etched removing the deep junction. This open textured area is then given a second shallow diffusion for optimum cell efficiency. This selective procedure maintains the original highly polished wafer surface under the grid lines so that high resolution narrow grid lines are possible. The double diffusion protects the junction from metal diffusion while enabling the optimum shallow junction in the illuminated regions. Combining these two features has produced a large area concentrator cells (8 cm/sup 2/) with peak efficiency above 16% and exhibiting a broad peak efficiency extending from 50 to 175 suns above 15%.

  18. Project to ferro solar: solar silicon manufacture quality by the metallurgical way; Proyecto ferrosolar: fabricacion de silicio calidad solar por la via metalurgica

    Energy Technology Data Exchange (ETDEWEB)

    Buyon, C. J.; Miranda, V. A.; Souto, S. a.; Miguez, N. J. M.; Perez, V. A.

    2008-07-01

    The spectacular development in the last years of the photovoltaic industry has generated big tension on the market of his principal raw material: the silicon. In Galicia is located the unique factory of metallurgical silicon of the Iberian Peninsular and quartz mines of great quality that are a property of the Group Ferro atlantica I+D is the company that concentrates the activities of R and D inside the above mentioned Group and is developing, from 9 years ago, the project Ferro Solar that consists of the purification for the metallurgical route of the silicon. The success in this project would give to the photovoltaic industry a much more abundant, new and cheap source of silicon that the current route across the polysilicon. The project is developing in the Factory of Sabon - Arteixo- Corunna and already there are obtained very encouraging results, which are an object of this first public presentation. (Author)

  19. Fabrication of porous silicon by metal-assisted etching using highly ordered gold nanoparticle arrays

    Science.gov (United States)

    Scheeler, Sebastian P.; Ullrich, Simon; Kudera, Stefan; Pacholski, Claudia

    2012-08-01

    A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. The etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. An appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-assembly which were translated into an array of pores by subsequent etching in HF solution containing H2O2. The quality of the pattern transfer depended on the chosen preparation conditions for the gold nanoparticle etching mask. The influence of the Si surface properties was investigated by using either hydrophilic or hydrophobic Si substrates resulting from piranha solution or HF treatment, respectively. The polymer-coated gold nanoparticles had to be thermally treated in order to provide a direct contact at the metal/Si interface which is required for the following metal-assisted etching. Plasma treatment as well as flame annealing was successfully applied. The best results were obtained for Si substrates which were flame annealed in order to remove the polymer matrix - independent of the substrate surface properties prior to spin-coating (hydrophilic or hydrophobic). The presented method opens up new resources for the fabrication of porous silicon by metal-assisted etching. Here, a vast variety of metal nanoparticles accessible by well-established wet-chemical synthesis can be employed for the fabrication of the etching masks.

  20. Delivery of High-Quality Biomarker Assays

    Directory of Open Access Journals (Sweden)

    Brian N. Swanson

    2002-01-01

    Full Text Available Biomarker measurements now support key decisions throughout the drug development process, from lead optimization to regulatory approvals. They are essential for documenting exposure-response relationships, specificity and potency toward the molecular target, untoward effects, and therapeutic applications. In a broader sense, biomarkers constitute the basis of clinical pathology and laboratory medicine. The utility of biomarkers is limited by their specificity and sensitivity toward the drug or disease process and by their overall variability. Understanding and controlling sources of variability is not only imperative for delivering high-quality assay results, but ultimately for controlling the size and expense of research studies. Variability in biomarker measurements is affected by: biological and environmental factors (e.g., gender, age, posture, diet and biorhythms, sample collection factors (e.g., preservatives, transport and storage conditions, and collection technique, and analytical factors (e.g., purity of reference material, pipetting precision, and antibody specificity. The quality standards for biomarker assays used in support of nonclinical safety studies fall under GLP (FDA regulations, whereas, those assays used to support human diagnostics and healthcare are established by CLIA (CMS regulations and accrediting organizations such as the College of American Pathologists. While most research applications of biomarkers are not regulated, biomarker laboratories in all settings are adopting similar laboratory practices in order to deliver high-quality data. Because of the escalation in demand for biomarker measurements, the highly-parallel (multi-plexed assay platforms that have fueled the rise of genomics will likely evolve into the analytical engines that drive the biomarker laboratories of tomorrow.

  1. Test beam results of a large area strip detector made on high resistivity Czochralski silicon

    CERN Document Server

    Tuominen, E; Czellar, S; Härkönen, J; Heikkinen, A M; Johansson, P; Karimäki, V; Luukka, Panja; Mehtälä, P; Niku, J; Nummela, S; Nysten, J; Simpura, J; Tuominiemi, J; Tuovinen, E; Ungaro, D; Vaarala, T; Voutilainen, M; Wendland, L; Zibellini, A

    2003-01-01

    We have tested the detection performance of a strip detector processed on silicon wafer grown by magnetic Czochralski (MCZ) method. This is the first time a full size Czochralski detector has been tested in a beam, although the advantages of CZ silicon have been known before. Prior to test beam measurements, the electrical characteristics of the Czochralski silicon detectors were found to be appropriate for particle detection. Using the Helsinki silicon beam telescope at CERN H2 test beam, the performance of the Czochralski silicon detector was shown to be comparable with the existing silicon strip detectors.

  2. Test beam results of a large area strip detector made on high resistivity Czochralski silicon

    Energy Technology Data Exchange (ETDEWEB)

    Tuominen, E.; Banzuzi, K.; Czellar, S.; Heikkinen, A.; Haerkoenen, J.; Johansson, P.; Karimaeki, V.; Luukka, P.; Mehtaelae, P.; Niku, J.; Nummela, S.; Nysten, J.; Simpura, J.; Tuovinen, E.; Tuominiemi, J.; Ungaro, D.; Vaarala, T.; Wendland, L.; Voutilainen, M.; Zibellini, A

    2003-09-01

    We have tested the detection performance of a strip detector processed on silicon wafer grown by magnetic Czochralski (MCZ) method. This is the first time a full size Czochralski detector has been tested in a beam, although the advantages of CZ silicon have been known before. Prior to test beam measurements, the electrical characteristics of the Czochralski silicon detectors were found to be appropriate for particle detection. Using the Helsinki Silicon Beam telescope at CERN H2 test beam, the performance of the Czochralski silicon detector was shown to be comparable with the existing silicon strip detectors.

  3. A 12%-efficient upgraded metallurgical grade silicon-organic heterojunction solar cell achieved by a self-purifying process.

    Science.gov (United States)

    Zhang, Jie; Song, Tao; Shen, Xinlei; Yu, Xuegong; Lee, Shuit-Tong; Sun, Baoquan

    2014-11-25

    Low-quality silicon such as upgraded metallurgical-grade (UMG) silicon promises to reduce the material requirements for high-performance cost-effective photovoltaics. So far, however, UMG silicon currently exhibits the short diffusion length and serious charge recombination associated with high impurity levels, which hinders the performance of solar cells. Here, we used a metal-assisted chemical etching (MACE) method to partially upgrade the UMG silicon surface. The silicon was etched into a nanostructured one by the MACE process, associated with removing impurities on the surface. Meanwhile, nanostructured forms of UMG silicon can benefit improved light harvesting with thin substrates, which can relax the requirement of material purity for high photovoltaic performance. In order to suppress the large surface recombination due to increased surface area of nanostructured UMG silicon, a post chemical treatment was used to decrease the surface area. A solution-processed conjugated polymer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was deposited on UMG silicon at low temperature (silicon substrate. By optimizing the thickness of silicon and suppressing the charge recombination at the interface between thin UMG silicon/PEDOT:PSS, we are able to achieve 12.0%-efficient organic-inorganic hybrid solar cells, which are higher than analogous UMG silicon devices. We show that the modified UMG silicon surface can increase the minority carrier lifetime because of reduced impurity and surface area. Our results suggest a design rule for an efficient silicon solar cell with low-quality silicon absorbers.

  4. Ultra-high speed all-optical signal processing using silicon waveguides and a carbon nanotubes based mode-locked laser

    DEFF Research Database (Denmark)

    Ji, Hua

    This thesis concerns the use of nano-engineered silicon waveguides for ultra-high speed optical serial data signal processing. The fundamental nonlinear properties of nano-engineered silicon waveguides are characterized. Utilizing the nonlinear effect in nano-engineered silicon waveguides...... for demultiplexing of 1.28 Tbit/s optical time division multiplexing data signal is investigated. A sampling system for ultra-high speed signal waveforms based on nano-engineered silicon waveguide is explored. To set up a sampling source, using carbon nanotubes for generating ultra-short pulses is pursued. A silicon...

  5. Some Topologies of High Quality Rectifiers

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Several basic classes of three-phase high-quality rectifiers are described.Both single-switch and six-switch three-phase rectifier topologiescan be derived from parent dc-dc converters.Single-switch rectifiers are compared with the basic six-switch PWM rectifiers performingsimilar power conversion functions,using the measures of total semiconductor stress and active semiconductor utilization.The singleswitchapproach is shown to utilize the semiconductor devices more effectively.Zero current switching and multiresonant approaches are foundto exhibit low switch stress over a wide range of operating points,with lowTHD.

  6. A fast, high-granularity silicon multiplicity detector for the NA50 experiment at CERN

    Energy Technology Data Exchange (ETDEWEB)

    Alessandro, B. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Alexeline, M. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Baglin, C. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Bisi, V. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Bonazzola, G. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Bonello, P. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Bussiere, A. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Capony, V. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Crovato, R. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Dabrowski, W. [Academy of Min. and Metall., Cracow (Poland). Fac. of Phys. and Nucl. Tech.; De Remigis, P. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); De Witt, J. [SCIPP, Santa Cruz (United States); Forlen, M. [Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules; Giubellino, P. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Grybos, P. [Academy of Min. and Metall., Cracow (Poland). Fac. of Phys. and Nucl. Tech.; Idzik, M. [Academy of Min. and Metall., Cracow (Poland). Fac. of Phys. and Nucl. Tech.; Kossakowski, R. [Grenoble-1 Univ., 74 -Annecy (France). Lab. de Physique des Particules; Marzari-Chiesa, A. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Masera, M. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Monteno, M. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Prado da Silva, W. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Ramello, L. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Rato Mendes, P. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Riccati, L. [Istituto Nazionale di Fisica Nucleare, Turin (Italy); Sartori, M. [Istituto Nazionale di Fisica Nucleare, Turin (Italy)

    1995-06-01

    We have designed a silicon detector to measure the angular distribution and the multiplicity of charged secondaries produced in high-energy Pb-Pb interactions. It will be used to characterize the events in the NA50 experiment. The experiment will have to function at very high rate, and the silicon detectors will have to operate in the high-radiation area close to the target. Therefore, the detector will have to be very fast (dead time below 50 ns), radiation resistant (up to the Mrad level as dose and up to more than 10{sup 13} particles/cm{sup 2} as non-ionizing damage) and of high granularity. The conditions on noise, speed and radiation hardness are comparable to the ones foreseen at the future Large Hadron Collider at CERN. We present here the detector design, discuss some of the solutions which have been investigated and report first results on the components of the system which have been designed and produced up to now. (orig.).

  7. High temperature monitoring of silicon carbide ceramics by confocal energy dispersive X-ray fluorescence spectrometry

    Science.gov (United States)

    Li, Fangzuo; Liu, Zhiguo; Sun, Tianxi

    2016-04-01

    In the present work, we presented an alternative method for monitoring of the oxidation situation of silicon carbide (SiC) ceramics at various high temperatures in air by measuring the Compton-to-Rayleigh intensity ratios (ICo/IRa) and effective atomic numbers (Zeff) of SiC ceramics with the confocal energy dispersive X-ray fluorescence (EDXRF) spectrometer. A calibration curve of the relationship between ICo/IRa and Zeff was established by using a set of 8 SiC calibration samples. The sensitivity of this approach is so high that it can be easily distinguished samples of Zeff differing from each other by only 0.01. The linear relationship between the variation of Zeff and the variations of contents of C, Si and O of SiC ceramics were found, and the corresponding calculation model of the relationship between the ΔZ and the ΔCC, ΔCSi, and ΔCO were established. The variation of contents of components of the tested SiC ceramics after oxidation at high temperature was quantitatively calculated based on the model. It was shown that the results of contents of carbon, silicon and oxygen obtained by this method were in good agreement with the results obtained by XPS, giving values of relative deviation less than 1%. It was concluded that the practicality of this proposed method for monitoring of the oxidation situation of SiC ceramics at high temperatures was acceptable.

  8. MagicPlate-512: A 2D silicon detector array for quality assurance of stereotactic motion adaptive radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Petasecca, M., E-mail: marcop@uow.edu.au; Newall, M. K.; Aldosari, A. H.; Fuduli, I.; Espinoza, A. A.; Porumb, C. S.; Guatelli, S.; Metcalfe, P.; Lerch, M. L. F.; Rosenfeld, A. B. [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2500, Australia and Illawarra Health Medical Research Institute, Wollongong, NSW 2522 (Australia); Booth, J. T.; Colvill, E. [School of Medicine, University of Sydney, Sydney, NSW 2006, Australia and Northern Sydney Cancer Centre, Royal North Shore Hospital, Sydney, NSW 2065 (Australia); Duncan, M.; Cammarano, D. [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2500 (Australia); Carolan, M. [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2500 (Australia); Illawarra Cancer Care Centre, Wollongong Hospital, Wollongong, NSW 2500 (Australia); Illawarra Health Medical Research Institute, Wollongong, NSW 2522 (Australia); Oborn, B. [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2500 (Australia); Illawarra Cancer Care Centre, Wollongong Hospital, Wollongong, NSW 2500 (Australia); Perevertaylo, V. [SPA-BIT, Kiev 02232 (Ukraine); Keall, P. J. [School of Medicine, University of Sydney, Sydney, NSW 2006 (Australia)

    2015-06-15

    Purpose: Spatial and temporal resolutions are two of the most important features for quality assurance instrumentation of motion adaptive radiotherapy modalities. The goal of this work is to characterize the performance of the 2D high spatial resolution monolithic silicon diode array named “MagicPlate-512” for quality assurance of stereotactic body radiation therapy (SBRT) and stereotactic radiosurgery (SRS) combined with a dynamic multileaf collimator (MLC) tracking technique for motion compensation. Methods: MagicPlate-512 is used in combination with the movable platform HexaMotion and a research version of radiofrequency tracking system Calypso driving MLC tracking software. The authors reconstruct 2D dose distributions of small field square beams in three modalities: in static conditions, mimicking the temporal movement pattern of a lung tumor and tracking the moving target while the MLC compensates almost instantaneously for the tumor displacement. Use of Calypso in combination with MagicPlate-512 requires a proper radiofrequency interference shielding. Impact of the shielding on dosimetry has been simulated by GEANT4 and verified experimentally. Temporal and spatial resolutions of the dosimetry system allow also for accurate verification of segments of complex stereotactic radiotherapy plans with identification of the instant and location where a certain dose is delivered. This feature allows for retrospective temporal reconstruction of the delivery process and easy identification of error in the tracking or the multileaf collimator driving systems. A sliding MLC wedge combined with the lung motion pattern has been measured. The ability of the MagicPlate-512 (MP512) in 2D dose mapping in all three modes of operation was benchmarked by EBT3 film. Results: Full width at half maximum and penumbra of the moving and stationary dose profiles measured by EBT3 film and MagicPlate-512 confirm that motion has a significant impact on the dose distribution. Motion

  9. Silicon carbide-based hydrogen gas sensors for high-temperature applications.

    Science.gov (United States)

    Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

    2013-10-09

    We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

  10. Testing Hadronic Interaction Models using a Highly Granular Silicon-Tungsten Calorimeter

    CERN Document Server

    Bilki, B.; Schlereth, J.; Xia, L.; Deng, Z.; Li, Y.; Wang, Y.; Yue, Q.; Yang, Z.; Eigen, G.; Mikami, Y.; Price, T.; Watson, N.K.; Thomson, M.A.; Ward, D.R.; Benchekroun, D.; Hoummada, A.; Khoulaki, Y.; Carloganu, C.; Chang, S.; Khan, A.; Kim, D.H.; Kong, D.J.; Oh, Y.D.; Blazey, G.C.; Dyshkant, A.; Francis, K.; Lima, J.G.R.; Salcido, P.; Zutshi, V.; Boisvert, V.; Green, B.; Misiejuk, A.; Salvatore, F.; Kawagoe, K.; Miyazaki, Y.; Sudo, Y.; Suehara, T.; Tomita, T.; Ueno, H.; Yoshioka, T.; Apostolakis, J.; Folger, G.; Ivantchenko, V.; Ribon, A.; Uzhinskiy, V.; Cauwenbergh, S.; Tytgat, M.; Zaganidis, N.; Hostachy, J.Y.; Morin, L.; Gadow, K.; Göttlicher, P.; Günter, C.; Krüger, K.; Lutz, B.; Reinecke, M.; Sefkow, F.; Feege, N.; Garutti, E.; Laurien, S.; Lu, S.; Marchesini, I.; Matysek, M.; Ramilli, M.; Kaplan, A.; Norbeck, E.; Northacker, D.; Onel, Y.; Kim, E.J.; van Doren, B.; Wilson, G.W.; Wing, M.; Bobchenko, B.; Chadeeva, M.; Chistov, R.; Danilov, M.; Drutskoy, A.; Epifantsev, A.; Markin, O.; Mizuk, R.; Novikov, E.; Popov, V.; Rusinov, V.; Tarkovsky, E.; Besson, D.; Popova, E.; Gabriel, M.; Kiesling, C.; Simon, F.; Soldner, C.; Szalay, M.; Tesar, M.; Weuste, L.; Amjad, M.S.; Bonis, J.; Callier, S.; Conforti di Lorenzo, S.; Cornebise, P.; Doublet, Ph.; Dulucq, F.; Faucci-Giannelli, M.; Fleury, J.; Frisson, T.; Kégl, B.; van der Kolk, N.; Li, H.; Martin-Chassard, G.; Richard, F.; de la Taille, Ch.; Pöschl, R.; Raux, L.; Rouëne, J.; Seguin-Moreau, N.; Anduze, M.; Balagura, V.; Becheva, E.; Boudry, V.; Brient, J.-C.; Cornat, R.; Frotin, M.; Gastaldi, F.; Magniette, F.; Matthieu, A.; Mora de Freitas, P.; Videau, H.; Augustin, J.-E.; David, J.; Ghislain, P.; Lacour, D.; Lavergne, L.; Zacek, J.; Cvach, J.; Gallus, P.; Havranek, M.; Janata, M.; Kvasnicka, J.; Lednicky, D.; Marcisovsky, M.; Polak, I.; Popule, J.; Tomasek, L.; Tomasek, M.; Ruzicka, P.; Sicho, P.; Smolik, J.; Vrba, V.; Zalesak, J.; Jeans, D.; Götze, M.

    2015-01-01

    A detailed study of hadronic interactions is presented using data recorded with the highly granular CALICE silicon-tungsten electromagnetic calorimeter. Approximately 600,000 selected negatively changed pion events at energies between 2 and 10 GeV have been studied. The predictions of several physics models available within the GEANT4 simulation tool kit are compared to this data. Although a reasonable overall description of the data is observed, there are significant quantitative discrepancies in the longitudinal and transverse distributions of reconstructed energy.

  11. Silicon-Containing Moieties as Enhancers of Segment and Junction Flexibility in High-Temperature Thermosetting

    Science.gov (United States)

    2012-12-11

    All samples were melted, blended, and de-gassed for 30 min. prior to cure in silicone molds under N2, cure schedule for 1 hr at 150 °C followed...Containing Cyanate Esters: Non-isothermal DSC 12 114 kJ/mol Post- cure Tg: 305 °C BADCy 95 kJ/mol Incomplete Cure 117 kJ/mol Post- cure Tg: 250°C...STT3 do not achieve full conversion even when cured at high temperatures, in accord with the shape of the non-isothermal DSC curves STT3

  12. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-09-04

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  13. Empirical determination of the energy band gap narrowing in highly doped n+ silicon

    Science.gov (United States)

    Yan, Di; Cuevas, Andres

    2013-07-01

    Highly doped regions in silicon devices should be analyzed using Fermi-Dirac statistics, taking into account energy band gap narrowing (BGN). An empirical expression for the BGN as a function of dopant concentration is derived here by matching the modeled and measured thermal recombination current densities J0 of a broad range of n+ dopant concentration profiles prepared by phosphorus diffusion. The analysis is repeated with Boltzmann statistics in order to determine a second empirical expression for the apparent energy band gap narrowing, which is found to be in good agreement with previous work.

  14. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Martinez-Rivero, C. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Matorras, F. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Rodrigo, T. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Sobron, M. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Vila, I. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Alberdi, J. [CIEMAT, Madrid (Spain); Arce, P. [CIEMAT, Madrid (Spain); Barcala, J.M. [CIEMAT, Madrid (Spain); Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)]. E-mail: antonio.ferrando@ciemat.es; Josa, M.I. [CIEMAT, Madrid (Spain); Luque, J.M. [CIEMAT, Madrid (Spain); Molinero, A. [CIEMAT, Madrid (Spain); Navarrete, J. [CIEMAT, Madrid (Spain); Oller, J.C. [CIEMAT, Madrid (Spain); Yuste, C. [CIEMAT, Madrid (Spain); Koehler, C. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Lutz, B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Schubert, M.B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany)

    2006-09-15

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm{sup 2}) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3{mu}m, a spatial-point reconstruction precision better than 10{mu}m, deflection angles smaller than 10{mu}rad and a transmission power in the visible and NIR higher than 70%.

  15. Characterization of a highly-segmented silicon prototype for the TRACE array

    Directory of Open Access Journals (Sweden)

    Gelain M.

    2014-03-01

    Full Text Available In view of the construction of novel and high-sensitive instrumentation for the emerging ISOL facilities new prototypes have being implemented and tested. The contribution focuses at the investigation of the detection efficiency of an innovative silicon-pad prototype, which is the key element for the construction of the TRACE array, pursued for the SPES facility based at the Legnaro National Laboratories (Italy. The inter-pad size has been estimated by using a commercial 100-MHz-14-bit CAEN digitizer for sampling the signals obtained by an alpha-source scan over the inter-pad region.

  16. Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, G.F., E-mail: dallabe@disi.unitn.it [DISI, Università di Trento, and INFN Trento, Trento (Italy); RSens srl, Modena (Italy); Tyzhnevyi, V. [DISI, Università di Trento, and INFN Trento, Trento (Italy); Bosi, A.; Bonaiuti, M. [RSens srl, Modena (Italy); Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Forti, F.; Giorgi, M.A.; Morsani, F.; Paoloni, E.; Rizzo, G.; Walsh, J. [Dipartimento di Fisica, Università di Pisa, and INFN Pisa, Pisa (Italy); Lusiani, A. [Scuola Normale Superiore and INFN Pisa, Pisa (Italy); Ciolini, R.; Curzio, G.; D' Errico, F.; Del Gratta, A. [Dipartimento di Ingegneria Meccanica, Nucleare e della Produzione, Università di Pisa, Pisa (Italy); Bidinelli, L. [En and tech, Università di Modena e Reggio Emilia, Reggio Emilia (Italy); RSens srl, Modena (Italy); and others

    2013-08-01

    A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the BJT internal amplification, real-time α particle detection is possible using simple readout electronics, which records the particle arrival time and charge. Functional tests at known Radon concentrations, demonstrated a sensitivity up to 4.9 cph/(100 Bq/m{sup 3}) and a count rate of 0.05 cph at nominally-zero Radon concentration.

  17. Feeding Against Gravity with Spot Feeders in High Silicon Ductile Iron

    DEFF Research Database (Denmark)

    Vedel-Smith, Nikolaj Kjelgaard; Tiedje, Niels Skat

    2014-01-01

    A test pattern, with three different moduli castings was developed to investigate methods to optimise feeding of high silicon ductile cast irons. Different feeder types, modulus, and locations were investigated using both an insulating and an exothermal sleeve material. Porosities were analysed......-hill against gravity. This effect may contribute to the thermal expansion created by the exothermal reaction. It was also found that the optimum feeder size does not scale linearly with the casting modulus but that larger casting modulus requires relatively smaller modulus feeders. The thermal gradient created...

  18. Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates

    Science.gov (United States)

    Chen, Zhaohui

    Ferrites are an invaluable group of insulating magnetic materials used for high frequency microwave applications in such passive electronic devices as isolators, phase shifters, and circulators. Because of their high permeability, non-reciprocal electromagnetic properties, and low eddy current losses, there are no other materials that serve such a broad range of applications. Until recently, they have been widely employed in bulk form, with little success in thin film-based applications in commercial or military microwave technologies. In today's technology, emerging electronic systems, such as high frequency, high power wireless and satellite communications (GPS, Bluetooth, WLAN, commercial radar, etc) thin film materials are in high demand. It is widely recognized that as high frequency devices shift to microwave frequencies the integration of passive devices with semiconductor electronics holds significant advantages in the realization of miniaturization, broader bandwidths, higher performance, speed, power and lower production costs. Thus, the primary objective of this thesis is to explore the integration of ferrite films with wide band gap semiconductor substrates for the realization of monolithic integrated circuits (MICs). This thesis focuses on two key steps for the integration of barium hexaferrite (Ba M-type or BaM) devices on semiconductor substrates. First, the development of high crystal quality ferrite film growth via pulsed laser deposition on wide band gap silicon carbide semiconductor substrates, and second, the effective patterning of BaM films using dry etching techniques. To address part one, BaM films were deposited on 6H silicon carbide (0001) substrates by Pulsed Laser Deposition. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, BaM films have a perpendicular magnetic anisotropy field of 16,900 Oe, magnetization (4piMs) of 4.4 k

  19. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Maruska, P [Spire Corp., Bedford, MA (United States)

    1996-09-01

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  20. Silicon alleviates deleterious effects of high salinity on the halophytic grass Spartina densiflora.

    Science.gov (United States)

    Mateos-Naranjo, Enrique; Andrades-Moreno, Luis; Davy, Anthony J

    2013-02-01

    The non-essential element silicon is known to improve plant fitness by alleviating the effects of biotic and abiotic stresses, particularly in crops. However, its possible role in the exceptional tolerance of halophytes to salinity has not been investigated. This study reports the effect of Si supply on the salinity tolerance of the halophytic grass Spartina densiflora; plants were treated with NaCl (0-680 mM), with or without silicon addition of 500 μM, in a glasshouse experiment. Plant responses were examined using growth analysis, combined with measurements of gas exchange, chlorophyll fluorescence and photosynthetic pigment concentrations. In addition, tissue concentrations of aluminium, calcium, copper, iron, potassium, magnesium, sodium, phosphorus and silicon were determined. Although high salinity decreased growth, this effect was alleviated by treatment with Si. Improved growth was associated with higher net photosynthetic rate (A), and greater water-use efficiency (WUE). Enhanced A at high salinity could be explained by beneficial effects of Si on the photochemical apparatus, and on chlorophyll concentrations. Ameliorative effects of Si were correlated with reduced sodium uptake, which was unrelated to a reduction in the transpiration rate, since Si-supplemented plants had higher stomatal conductances (G(s)). These plants also had higher tissue concentrations of essential nutrients, suggesting that Si had a positive effect on the mineral nutrient balance in salt-stressed plants. Si appears to play a significant role in salinity tolerance even in a halophyte, which has other, specific salt-tolerance mechanisms, through diverse protective effects on the photosynthetic apparatus, water-use efficiency and mineral nutrient balance.

  1. Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

    Science.gov (United States)

    Evans, Laura J.; Okojie, Robert S.; Lukco, Dorothy

    2011-01-01

    We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

  2. Microstructure and mechanical properties of a new type of austempered boron alloyed high silicon cast steel

    Directory of Open Access Journals (Sweden)

    Chen Xiang

    2013-05-01

    Full Text Available In the present paper, a new type of austempered boron alloyed high silicon cast steel has been developed, and its microstructures and mechanical properties at different temperatures were investigated. The experimental results indicate that the boron alloyed high silicon cast steel comprises a dendritic matrix and interdendritic eutectic borides in as-cast condition. The dendritic matrix is made up of pearlite, ferrite, and the interdendritic eutectic boride is with a chemical formula of M2B (M represents Fe, Cr, Mn or Mo which is much like that of carbide in high chromium white cast iron. Pure ausferrite structure that consists of bainitic ferrite and retained austenite can be obtained in the matrix by austempering treatment to the cast steel. No carbides precipitate in the ausferrite structure and the morphology of borides remains almost unchanged after austempering treatments. Secondary boride particles precipitate during the course of austenitizing. The hardness and tensile strength of the austempered cast steel decrease with the increase of the austempering temperature, from 250 篊 to 400 篊. The impact toughness is 4-11 J昪m-2 at room temperature and the impact fracture fractogragh indicates that the fracture is caused by the brittle fracture of the borides.

  3. Structural and static electric response properties of highly symmetric lithiated silicon cages: theoretical predictions.

    Science.gov (United States)

    Koukaras, Emmanuel N; Zdetsis, Aristides D; Karamanis, Panaghiotis; Pouchan, Claude; Avramopoulos, Aggelos; Papadopoulos, Manthos G

    2012-04-15

    It is shown by density functional theory calculations that high symmetry silicon cages can be designed by coating with Li atoms. The resulting highly symmetric lithiated silicon cages (up to D(5d) symmetry) are low-lying true minima of the energy hypersurface with binding energies of the order of 4.6 eV per Si atom and moderate highest occupied molecular orbital-lowest unoccupied molecular orbital gaps. Moreover, relying on a systematic study of the electric response properties obtained by ab initio (Hartree-Fock, MP2, and configuration interaction singles (CIS)) and density functional (B3LYP, B2PLYP, and CAM-B3LYP) methods, it is shown that lithium coating has a large impact on the magnitude of their second hyperpolarizabilities resulting to highly hyperpolarizable species. Such hyperpolarizable character is directly connected to the increase in the density of the low-lying excited states triggered by the interaction between the Si cage and the surrounding Li atoms.

  4. Systematic process development towards high performance transferred thin silicon solar cells based on epitaxially grown absorbers

    Science.gov (United States)

    Murcia Salazar, Clara Paola

    The value of thin crystalline silicon (c-Si) solar cells is the potential for higher performance compared to conventional wafer approaches. Thin silicon solar cells can outperform thick cells with the same material properties because the smaller active volume causes a reduced bulk recombination leading to higher voltages while efficient light trapping structures ensure all photons are absorbed. Efficiencies above 20+% can be achieved with less than 20um of c-Si with current silicon solar cell processing technologies. In a thin solar cell, factors that will lead to high efficiency include high minority carrier lifetime, low surface recombination, and good optical confinement. Independently optimizing surface optical and electrical properties in a thin solar cell can achieve this higher performance. In addition, re-utilizing a c-Si wafer with a process that allows optimization of both surfaces is a path to higher performance at lower cost. The challenge in the fabrication of this high performance concept is to separately analyze critical parameters through fabrication and transfer and establish the design rules for high performance. This work contributes to the design and systematic fabrication approach of a 20 mum thick epitaxial silicon solar cell. State-of-the-art thin absorbers of less than 30um have reported 655mV (on a textured front surface with antireflection coating), and efficiencies near 17%. We report near 640mV (on a planar front surface with antireflection coating) for 20 mum thick absorbers. It is found that previously reported efficiencies are tightly related to solar cell's active thickness. In the case of transferred solar cells, the thinnest epitaxial transferred cell reported is near 24 mum thick with an efficiency of 15.4% (transparent front handle, textured with ARC and metallic back reflector). Recently, a c-Si transferred solar cell of 43 mum has reported 19.1% efficiency (with a front texture and ARC with localized back contact and reflector

  5. Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure.

    Science.gov (United States)

    Soltamov, V A; Yavkin, B V; Tolmachev, D O; Babunts, R A; Badalyan, A G; Davydov, V Yu; Mokhov, E N; Proskuryakov, I I; Orlinskii, S B; Baranov, P G

    2015-12-11

    We discovered a family of uniaxially oriented silicon vacancy-related centers with S=3/2 in a rhombic 15R-SiC crystalline matrix. We demonstrate that these centers exhibit unique characteristics such as optical spin alignment up to the temperatures of 250°C. Thus, the range of robust optically addressable vacancy-related spin centers is extended to the wide class of rhombic SiC polytypes. To use these centers for quantum applications it is essential to know their structure. Using high frequency electron nuclear double resonance, we show that the centers are formed by negatively charged silicon vacancies V_{Si}^{-} in the paramagnetic state with S=3/2 that is noncovalently bonded to the neutral carbon vacancy V_{C}^{0} in the nonparamagnetic state, located on the adjacent site along the SiC symmetry c axis.

  6. Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources

    Directory of Open Access Journals (Sweden)

    Jiyoon Nam

    2016-01-01

    Full Text Available We demonstrate a compact amorphous silicon (a-Si solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography techniques and relatively high power conversion efficiency. The open circuit voltage of a-Si solar cells can be easily controlled by serially interconnecting a-Si solar cells. Moreover, the a-Si solar module can be easily patterned by photolithography in any desired shapes with high areal densities. Using the photolithographic technique, we fabricate a compact a-Si solar module with noticeable photovoltaic characteristics as compared with the reported values for high-voltage power supplies.

  7. Highly Conductive, Mechanically Robust, and Electrochemically Inactive TiC/C Nanofiber Scaffold for High-Performance Silicon Anode Batteries

    KAUST Repository

    Yao, Yan

    2011-10-25

    Silicon has a high specific capacity of 4200 mAh/g as lithium-ion battery anodes, but its rapid capacity fading due to >300% volume expansion and pulverization presents a significant challenge for practical applications. Here we report a core-shell TiC/C/Si inactive/active nanocomposite for Si anodes demonstrating high specific capacity and excellent electrochemical cycling. The amorphous silicon layer serves as the active material to store Li+, while the inactive TiC/C nanofibers act as a conductive and mechanically robust scaffold for electron transport during the Li-Si alloying process. The core-shell TiC/C/Si nanocomposite anode shows ∼3000 mAh g-1 discharge capacity and 92% capacity retention after 100 charge/discharge cycles. The excellent cycling stability and high rate performance could be attributed to the tapering of the nanofibers and the open structure that allows facile Li ion transport and the high conductivity and mechanical stability of the TiC/C scaffold. © 2011 American Chemical Society.

  8. High frequency electro-optic measurement of strained silicon racetrack resonators

    CERN Document Server

    Borghi, M; Merget, F; Witzens, J; Bernard, M; Ghulinyan, M; Pucker, G; Pavesi, L

    2015-01-01

    The observation of the electro-optic effect in strained silicon waveguides has been considered as a direct manifestation of an induced $\\chi^{(2)}$ non-linearity in the material. In this work, we perform high frequency measurements on strained silicon racetrack resonators. Strain is controlled by a mechanical deformation of the waveguide. It is shown that any optical modulation vanishes independently of the applied strain when the applied voltage varies much faster than the carrier effective lifetime, and that the DC modulation is also largely independent of the applied strain. This demonstrates that plasma carrier dispersion is responsible for the observed electro-optic effect. After normalizing out free carrier effects, our results set an upper limit of $8\\,pm/V$ to the induced high-speed $\\chi^{(2)}_{eff,zzz}$ tensor element at an applied stress of $-0.5\\,GPa$. This upper limit is about one order of magnitude lower than the previously reported values for static electro-optic measurements.

  9. Radiation hardness and precision timing study of silicon detectors for the CMS High Granularity Calorimeter (HGC)

    Science.gov (United States)

    Currás, Esteban; Fernández, Marcos; Gallrapp, Christian; Gray, Lindsey; Mannelli, Marcello; Meridiani, Paolo; Moll, Michael; Nourbakhsh, Shervin; Scharf, Christian; Silva, Pedro; Steinbrueck, Georg; Fatis, Tommaso Tabarelli de; Vila, Iván

    2017-02-01

    The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb-1 per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm2 and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb-1, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 1016 neq/cm2. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μm n-on-p and p-on-n silicon pads irradiated to fluences up to 1.6×1016 neq/cm2 is presented. The properties of these diodes studied before and after irradiation were leakage current, capacitance, charge collection efficiency, annealing effects and timing capability. The results of these measurements validate these sensors as candidates for the HGC system.

  10. High-frequency electro-optic measurement of strained silicon racetrack resonators.

    Science.gov (United States)

    Borghi, M; Mancinelli, M; Merget, F; Witzens, J; Bernard, M; Ghulinyan, M; Pucker, G; Pavesi, L

    2015-11-15

    The observation of the electro-optic effect in strained silicon waveguides has been considered a direct manifestation of an induced χ(2) nonlinearity in the material. In this work, we perform high-frequency measurements on strained silicon racetrack resonators. Strain is controlled by a mechanical deformation of the waveguide. It is shown that any optical modulation vanishes, independent of the applied strain, when the applied voltage varies much faster than the carrier effective lifetime and that the DC modulation is also largely independent of the applied strain. This demonstrates that plasma carrier dispersion is responsible for the observed electro-optic effect. After normalizing out free-carrier effects, our results set an upper limit of (8±3) pm/V to the induced high-speed effective χeff,zzz(2) tensor element at an applied stress of -0.5 GPa. This upper limit is about 1 order of magnitude lower than previously reported values for static electro-optic measurements.

  11. High-efficiency silicon solar-cell design and practical barriers

    Science.gov (United States)

    Mokashi, A.

    1985-01-01

    A numerical evaluation technique is used to study the impact of practical barriers, such as heavy doping effects (Auger recombination, band gap narrowing), surface recombination, shadowing losses and minority-carrier lifetime (Tau), on a high efficiency silicon solar cell performance. Considering a high Tau of 1 ms, efficiency of a silicon solar cell of the hypothetical case is estimated to be around 29%. This is comparable with (detailed balance limit) maximum efficiency of a p-n junction solar cell of 30%. Value of Tau is varied from 1 second to 20 micro. Heavy doping effects, and realizable values of surface recombination velocities and shadowing, are then considered in succession and their influence on cell efficiency is evaluated and quantified. These practical barriers cause the cell efficiency to reduce from the maximum value of 29% to the experimentally achieved value of about 19%. Improvement in open circuit voltage V sub oc is required to achieve cell efficiency greater than 20%. Increased value of Tau reduces reverse saturation current and, hence, improves V sub oc. Control of surface recombination losses becomes critical at higher V sub oc. Substantial improvement in Tau and considerable reduction in surface recombination velocities is essential to achieve cell efficiencies greater than 20%.

  12. Development of a Modern Cosmic Ray Telescope based on Silicon Photomultipliers for use in High Schools

    Science.gov (United States)

    Ruiz Castruita, Daniel; Niduaza, Rommel; Hernandez, Victor; Knox, Adrian; Ramos, Daniel; Fan, Sewan; Fatuzzo, Laura

    2015-04-01

    Lately, a new light sensor technology based on the breakdown phenomenon in the reverse biased silicon diode has found many applications that span from particle physics to medical imaging science. The silicon photomultiplier (SiPM) has several notable advantages compared to conventional photomultiplier tubes which include: lower cost, lower operating voltage and the ability to measure very weak light signals at the single photon level. At this conference meeting, we describe our efforts to implement SiPMs as read out light detectors for plastic scintillators in a cosmic ray telescope for use in high schools. In particular, we describe our work in designing, testing and assembling the cosmic ray telescope. We include a high gain preamplifier, a custom coincidence circuit using fast comparators to discriminate the SiPM signal amplitudes and a monovibrator IC for lengthening the singles and coincidence logic pulses. An Arduino micro-controller and program sketches are used for processing and storing the singles and coincidence counts data. Results from our measurements would be illustrated and presented. US Department of Education Title V Grant Award PO31S090007.

  13. Photoluminescence of monocrystalline and stain-etched porous silicon doped with high temperature annealed europium

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero-Lemus, R; Montesdeoca-Santana, A; Gonzalez-Diaz, B; Diaz-Herrera, B; Hernandez-Rodriguez, C; Jimenez-Rodriguez, E [Departamento de Fisica Basica, Universidad de La Laguna (ULL), Avenida AstrofIsico Francisco Sanchez, 2. 38206 La Laguna, Tenerife (Spain); Velazquez, J J, E-mail: rglemus@ull.es [Departamento de Fisica Fundamental y Experimental, Electronica y Sistemas, Universidad de La Laguna (ULL), Avenida Astrofisico Francisco Sanchez, 2. 38206 La Laguna, Tenerife (Spain)

    2011-08-24

    In this work, for the first time, the photoluminescent emission and excitation spectra of non-textured layers and stain-etched porous silicon layers (PSLs) doped with high temperature annealed europium (Eu) are evaluated. The PSLs are evaluated as a host for rare earth ions and as an antireflection coating. The applied doping process, which consists in a simple impregnation method followed by a high-temperature annealing step, is compatible with the standard processes in the fabrication of solar cells. The results show down-shifting processes with a maximum photoluminescent intensity at 615 nm, related to the transition {sup 5}D{sub 0} {yields} {sup 7}F{sub 2}. Different initial concentrations of Eu(NO{sub 3}){sub 3} are evaluated to study the influence of the rare earth concentration on the photoluminescent intensity. The chemical composition and the morphology of Eu-doped PSLs are examined by means of x-ray dispersion spectroscopy, Fourier-transform infrared spectroscopy and scanning electron microscopy. These Eu-doped layers are considered to be applied as energy converters in silicon-based third generation solar cells.

  14. Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

    2016-08-01

    We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

  15. High-Performance Silicon Battery Anodes Enabled by Engineering Graphene Assemblies.

    Science.gov (United States)

    Zhou, Min; Li, Xianglong; Wang, Bin; Zhang, Yunbo; Ning, Jing; Xiao, Zhichang; Zhang, Xinghao; Chang, Yanhong; Zhi, Linjie

    2015-09-01

    We propose a novel material/electrode design formula and develop an engineered self-supporting electrode configuration, namely, silicon nanoparticle impregnated assemblies of templated carbon-bridged oriented graphene. We have demonstrated their use as binder-free lithium-ion battery anodes with exceptional lithium storage performances, simultaneously attaining high gravimetric capacity (1390 mAh g(-1) at 2 A g(-1) with respect to the total electrode weight), high volumetric capacity (1807 mAh cm(-3) that is more than three times that of graphite anodes), remarkable rate capability (900 mAh g(-1) at 8 A g(-1)), excellent cyclic stability (0.025% decay per cycle over 200 cycles), and competing areal capacity (as high as 4 and 6 mAh cm(-2) at 15 and 3 mA cm(-2), respectively). Such combined level of performance is attributed to the templated carbon bridged oriented graphene assemblies involved. This engineered graphene bulk assemblies not only create a robust bicontinuous network for rapid transport of both electrons and lithium ions throughout the electrode even at high material mass loading but also allow achieving a substantially high material tap density (1.3 g cm(-3)). Coupled with a simple and flexible fabrication protocol as well as practically scalable raw materials (e.g., silicon nanoparticles and graphene oxide), the material/electrode design developed would propagate new and viable battery material/electrode design principles and opportunities for energy storage systems with high-energy and high-power characteristics.

  16. Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias.

    Science.gov (United States)

    He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji

    2017-01-18

    Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.

  17. Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias

    Science.gov (United States)

    He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji

    2017-01-01

    Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs. PMID:28098250

  18. Pressure Sensing in High-Refractive-Index Liquids Using Long-Period Gratings Nanocoated with Silicon Nitride

    Directory of Open Access Journals (Sweden)

    Jiahua Chen

    2010-12-01

    Full Text Available The paper presents a novel pressure sensor based on a silicon nitride (SiNx nanocoated long-period grating (LPG. The high-temperature, radio-frequency plasma-enhanced chemical-vapor-deposited (RF PECVD SiNx nanocoating was applied to tune the sensitivity of the LPG to the external refractive index. The technique allows for deposition of good quality, hard and wear-resistant nanofilms as required for optical sensors. Thanks to the SiNx nanocoating it is possible to overcome a limitation of working in the external-refractive-index range, which for a bare fiber cannot be close to that of the cladding. The nanocoated LPG-based sensing structure we developed is functional in high-refractive-index liquids (nD > 1.46 such as oil or gasoline, with pressure sensitivity as high as when water is used as a working liquid. The nanocoating developed for this experiment not only has the highest refractive index ever achieved in LPGs (n > 2.2 at λ = 1,550 nm, but is also the thinnest (

  19. High rate particle tracking and ultra-fast timing with a thin hybrid silicon pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Fiorini, M., E-mail: Massimiliano.Fiorini@cern.ch [CERN, CH-1211 Geneva 23 (Switzerland); Aglieri Rinella, G. [CERN, CH-1211 Geneva 23 (Switzerland); Carassiti, V. [INFN Sezione di Ferrara (Italy); Ceccucci, A. [CERN, CH-1211 Geneva 23 (Switzerland); Cortina Gil, E. [Université Catholique de Louvain, Louvain-la-Neuve (Belgium); Cotta Ramusino, A. [INFN Sezione di Ferrara (Italy); Dellacasa, G.; Garbolino, S.; Jarron, P. [INFN Sezione di Torino (Italy); Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A. [CERN, CH-1211 Geneva 23 (Switzerland); Martin, E. [Université Catholique de Louvain, Louvain-la-Neuve (Belgium); Mazza, G. [INFN Sezione di Torino (Italy); Morel, M.; Noy, M. [CERN, CH-1211 Geneva 23 (Switzerland); Nuessle, G. [Université Catholique de Louvain, Louvain-la-Neuve (Belgium); Perktold, L.; Petagna, P. [CERN, CH-1211 Geneva 23 (Switzerland); and others

    2013-08-01

    The Gigatracker (GTK) is a hybrid silicon pixel detector designed for the NA62 experiment at CERN. The beam spectrometer, made of three GTK stations, has to sustain high and non-uniform particle rate (∼1GHz in total) and measure momentum and angles of each beam track with a combined time resolution of 150 ps. In order to reduce multiple scattering and hadronic interactions of beam particles, the material budget of a single GTK station has been fixed to 0.5% X{sub 0}. The expected fluence for 100 days of running is 2×10{sup 14} 1 MeV n{sub eq}/cm{sup 2}, comparable to the one foreseen in the inner trackers of LHC detectors during 10 years of operation. To comply with these requirements, an efficient and very low-mass (<0.15%X{sub 0}) cooling system is being constructed, using a novel microchannel cooling silicon plate. Two complementary read-out architectures have been produced as small-scale prototypes: one is based on a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other makes use of a constant-fraction discriminator followed by an on-pixel TDC. The read-out ASICs are produced in 130 nm IBM CMOS technology and will be thinned down to 100μm or less. An overview of the Gigatracker detector system will be presented. Experimental results from laboratory and beam tests of prototype bump-bonded assemblies will be described as well. These results show a time resolution of about 170 ps for single hits from minimum ionizing particles, using 200μm thick silicon sensors.

  20. Control of the Gas Flow in an Industrial Directional Solidification Furnace for Production of High Purity Multicrystalline Silicon Ingots

    Directory of Open Access Journals (Sweden)

    Lijun Liu

    2015-01-01

    Full Text Available A crucible cover was designed as gas guidance to control the gas flow in an industrial directional solidification furnace for producing high purity multicrystalline silicon. Three cover designs were compared to investigate their effect on impurity transport in the furnace and contamination of the silicon melt. Global simulations of coupled oxygen (O and carbon (C transport were carried out to predict the SiO and CO gases in the furnace as well as the O and C distributions in the silicon melt. Cases with and without chemical reaction on the cover surfaces were investigated. It was found that the cover design has little effect on the O concentration in the silicon melt; however, it significantly influences CO gas transport in the furnace chamber and C contamination in the melt. For covers made of metal or with a coating on their surfaces, an optimal cover design can produce a silicon melt free of C contamination. Even for a graphite cover without a coating, the carbon concentration in the silicon melt can be reduced by one order of magnitude. The simulation results demonstrate a method to control the contamination of C impurities in an industrial directional solidification furnace by crucible cover design.

  1. Radiation-hard Silicon Photonics for Future High Energy Physics Experiments

    CERN Document Server

    AUTHOR|(CDS)2089774; Troska, Jan

    Collisions of proton beams in the Large Hadron Collider at CERN produce very high radiation levels in the innermost parts of the particle detectors and enormous amounts of measurement data. Thousands of radiation-hard optical links based on directly-modulated laser diodes are thus installed in the particle detectors to transmit the measurement data to the processing electronics. The radiation levels in the innermost regions of future particle detectors will be much higher than they are now. Alternative solutions to laser-based radiation-hard optical links have to be found since the performance of laser diodes decreases beyond the operation margin of the system when irradiated to sufficiently high radiation levels. Silicon Photonics (SiPh) is currently being investigated as a promising alternative technology. First tests have indeed shown that SiPh Mach-Zehnder modulators (MZMs) are relatively insensitive to a high neutron fluence. However, they showed a strong degradation when exposed to ionizing radiation. ...

  2. Inorganic Glue Enabling High Performance of Silicon Particles as Lithium Ion Battery Anode

    KAUST Repository

    Cui, Li-Feng

    2011-01-01

    Silicon, as an alloy-type anode material, has recently attracted lots of attention because of its highest known Li+ storage capacity (4200 mAh/g). But lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Silicon nanostructures such as nanowires and nanotubes can overcome the pulverization problem, however these nano-engineered silicon anodes usually involve very expensive processes and have difficulty being applied in commercial lithium ion batteries. In this study, we report a novel method using amorphous silicon as inorganic glue replacing conventional polymer binder. This inorganic glue method can solve the loss of contact issue in conventional silicon particle anode and enables successful cycling of various sizes of silicon particles, both nano-particles and micron particles. With a limited capacity of 800 mAh/g, relatively large silicon micron-particles can be stably cycled over 200 cycles. The very cheap production of these silicon particle anodes makes our method promising and competitive in lithium ion battery industry. © 2011 The Electrochemical Society.

  3. RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon carbide synthesis study

    Science.gov (United States)

    Intarasiri, S.; Kamwanna, T.; Hallén, A.; Yu, L. D.; Janson, M. S.; Thongleum, C.; Possnert, G.; Singkarat, S.

    2006-08-01

    For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpose. A self-developed computer program dedicated to extract depth profiles of lighter impurities in heavier matrix is established. For control, calculated results are compared with an other ion beam analysis (IBA) technique superior for studying lighter impurity in heavier substrate i.e. elastic recoil detection analysis (ERDA). The RBS was performed with a 1.7-MV Tandetron accelerator using He2+ as the probe ions. The ERDA was performed with a 5-MV Pelletron accelerator using I8+ as the probe ions. This work shows that the RBS-extracted data had no significant deviations from those of ERDA and simulations by SRIM2003 and SIIMPL computer codes. We also found that annealing at temperatures as high as 1000 °C had quite limited effect on the redistribution of carbon in silicon.

  4. RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study

    Energy Technology Data Exchange (ETDEWEB)

    Intarasiri, S. [FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand) and Institute for Science and Technology Research and Development, Chiang Mai University, Chiang Mai 50200 (Thailand)]. E-mail: saweat@yahoo.com; Kamwanna, T. [FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Hallen, A. [Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, S-164 40 Kista-Stockholm (Sweden); Yu, L.D. [FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Janson, M.S. [Department of Physics and Astronomy, B140, Frederick Reines Hall, University of California, Irvine, CA 92 697 (United States); Thongleum, C. [Institute for Science and Technology Research and Development, Chiang Mai University, Chiang Mai 50200 (Thailand); Possnert, G. [Angstrom Laboratory, Division of Ion Physics, Uppsala University, SE-751 21 Uppsala (Sweden); Singkarat, S. [FNRF, Department of Physics, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2006-08-15

    For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpose. A self-developed computer program dedicated to extract depth profiles of lighter impurities in heavier matrix is established. For control, calculated results are compared with an other ion beam analysis (IBA) technique superior for studying lighter impurity in heavier substrate i.e. elastic recoil detection analysis (ERDA). The RBS was performed with a 1.7-MV Tandetron accelerator using He{sup 2+} as the probe ions. The ERDA was performed with a 5-MV Pelletron accelerator using I{sup 8+} as the probe ions. This work shows that the RBS-extracted data had no significant deviations from those of ERDA and simulations by SRIM2003 and SIIMPL computer codes. We also found that annealing at temperatures as high as 1000 deg. C had quite limited effect on the redistribution of carbon in silicon.

  5. Investigation on the long-term radiation hardness of low resistivity starting silicon materials for RT silicon detectors in high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.

    1994-02-01

    Relatively low resistivity (200 to 1000 {Omega}-cm) starting silicon materials have been studied in the search of room temperature neutron radiation-hard silicon detectors. It has been found that, moderate resistivity (300-700 {Omega}-cm) silicon detectors, after being irradiated to 5.0 {times} 10{sup 13} to 2.0 {times} 10{sup 14} n/cm{sup 2}, are extremely stable in terms of the detector full depletion voltage (V{sub d}) or the net effective concentration of ionized space charges (N{sub eff} ---- there is little ``reverse annealing`` of N{sub eff} at RT and elevated temperatures as compared with large reverse annealing observed for high resistivity silicon detectors. Detectors with starting resistivity of 300-700 {Omega}-cm have been found to be stable, during the equivalent of one year RT anneal that would reach the saturation of the first stage of reverse anneal, within then N{sub eff} window of {vert_bar}N{sub eff}{vert_bar}{le} 2.5 {times} 10{sup 12} cm{sup {minus}3} (V{sub d} = 180 V for d = 300 {mu}m) in a working range of 5.0 {times} 10{sup 13} to 1.5 {times} 10{sup 14} n/cm{sup 2}, or a net neutron radiation tolerance of 1.0 {times} 10{sup 14} n/cm{sup 2}. The observed effects are in very good agreement with an early proposed model, which predicted among others, that there might be an off set between the reverse annealing effect and the partial annealing of the P-V centers that leads to the partial recovery of the shallow impurity donors.

  6. High Quality Data for Grid Integration Studies

    Energy Technology Data Exchange (ETDEWEB)

    Clifton, Andrew; Draxl, Caroline; Sengupta, Manajit; Hodge, Bri-Mathias

    2017-01-22

    As variable renewable power penetration levels increase in power systems worldwide, renewable integration studies are crucial to ensure continued economic and reliable operation of the power grid. The existing electric grid infrastructure in the US in particular poses significant limitations on wind power expansion. In this presentation we will shed light on requirements for grid integration studies as far as wind and solar energy are concerned. Because wind and solar plants are strongly impacted by weather, high-resolution and high-quality weather data are required to drive power system simulations. Future data sets will have to push limits of numerical weather prediction to yield these high-resolution data sets, and wind data will have to be time-synchronized with solar data. Current wind and solar integration data sets are presented. The Wind Integration National Dataset (WIND) Toolkit is the largest and most complete grid integration data set publicly available to date. A meteorological data set, wind power production time series, and simulated forecasts created using the Weather Research and Forecasting Model run on a 2-km grid over the continental United States at a 5-min resolution is now publicly available for more than 126,000 land-based and offshore wind power production sites. The National Solar Radiation Database (NSRDB) is a similar high temporal- and spatial resolution database of 18 years of solar resource data for North America and India. The need for high-resolution weather data pushes modeling towards finer scales and closer synchronization. We also present how we anticipate such datasets developing in the future, their benefits, and the challenges with using and disseminating such large amounts of data.

  7. High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

    Science.gov (United States)

    Shah, V. A.; Dobbie, A.; Myronov, M.; Leadley, D. R.

    2011-08-01

    After a long period of developing integrated circuit technology through simple scaling of silicon devices, the semiconductor industry is now embracing technology boosters such as strain for higher mobility channel material. Germanium is the logical supplement to enhance existing technologies, as its material behaviour is very close to silicon, and to create new functional devices that cannot be fabricated from silicon alone (Hartmann et al. (2004) [1]). Germanium wafers are, however, both expensive and less durable than their silicon counterparts. Hence it is highly desirable to create a relaxed high quality Ge layer on a Si substrate, with the provision that this does not unduly compromise the planarity of the system. The two temperature method, proposed by Colace et al. (1997) [2], can give smooth (RMS surface roughness below 1 nm) and low threading dislocation density (TDD Merwe growth mode. This LT growth also generates a vast number of dislocations, of the order of 10 8-10 9 cm -2, that enable the next HT step to relax the maximum amount of strain possible. The effect of varying the HT layer thickness is studied by depositing on a LT layer of fixed thickness (100 nm) at a higher growth temperature of 670 °C. We find that the HT layer allows Ge-on-Ge adatom transport to minimise the surface energy and smooth the layer. The final step to the technique is annealing at a high temperature that allows the dislocations generated to glide, increasing the degree of relaxation, and annihilate. We find that annealing can reduce the TDD to the order of 10 7 cm -2, but at a cost of a significantly roughened surface.

  8. Microstructure Control of Columnar-Grained Silicon Substrate Solidified from Silicon Melts Using Gas Pressure

    Directory of Open Access Journals (Sweden)

    Jun-Kyu Lee

    2015-01-01

    Full Text Available A silicon substrate with the dimensions of 100 × 140 × 0.3 mm was grown directly from liquid silicon with gas pressure. The silicon melt in the sealed melting part was injected into the growth part at applied pressure of 780–850 Torr. The solidified silicon substrate was then transferred by the pull of the cooled dummy bar. A desirable structure with a liquid-solid interface perpendicular to the pulling direction was formed when the mold temperature in the solidification zone of the growth part was much higher than that of the dummy bar, as this technique should be able to overcome thermal loss through the molds and the limited heat flux derived from the very narrow contact area between the silicon melt and the dummy bar. In addition, because the metallic impurities and expansion of volume during solidification are preferably moved to a liquid phase, a high-quality silicon substrate, without defects such as cracks and impurities in the substrate, could be manufactured in the interface structure. The present study reports the experimental findings on a new and direct growth system for obtaining silicon substrates characterized by high quality and productivity, as a candidate for alternate routes for the fabrication of silicon substrates.

  9. Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

    CERN Document Server

    Flaschel, Nils; Diez, Sergio; Gerboles, Marta; Gregor, Ingrid-Maria; Jorda, Xavier; Mas, Roser; Mussgiller, Andreas; Quirion, David; Tackmann, Kerstin; Ullan, Miguel

    2016-01-01

    Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics for thermal management of silicon tracking detectors. Today's prospects of micro-fabricating silicon opens a door to a more lightweight and direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. DESY and IMB-CNM are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype. Furthermore, the device was simulated using finite element methods.

  10. Thermal conductivity reduction of crystalline silicon by high-pressure torsion.

    Science.gov (United States)

    Harish, Sivasankaran; Tabara, Mitsuru; Ikoma, Yoshifumi; Horita, Zenji; Takata, Yasuyuki; Cahill, David G; Kohno, Masamichi

    2014-01-01

    We report a dramatic and irreversible reduction in the lattice thermal conductivity of bulk crystalline silicon when subjected to intense plastic strain under a pressure of 24 GPa using high-pressure torsion (HPT). Thermal conductivity of the HPT-processed samples were measured using picosecond time domain thermoreflectance. Thermal conductivity measurements show that the HPT-processed samples have a lattice thermal conductivity reduction by a factor of approximately 20 (from intrinsic single crystalline value of 142 Wm(-1) K(-1) to approximately 7.6 Wm(-1) K(-1)). Thermal conductivity reduction in HPT-processed silicon is attributed to the formation of nanograin boundaries and metastable Si-III/XII phases which act as phonon scattering sites, and because of a large density of lattice defects introduced by HPT processing. Annealing the samples at 873 K increases the thermal conductivity due to the reduction in the density of secondary phases and lattice defects.

  11. High-speed and efficient silicon modulator based on forward-biased pin diodes

    Directory of Open Access Journals (Sweden)

    Suguru eAkiyama

    2014-11-01

    Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

  12. Depth profile study on Raman spectra of high-energy-electron-irradiated hydrogenated amorphous silicon films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    According to the different penetration depths for the incident lights of 472 nm and 532 nm in hydrogenated amorphous silicon (a-Si:H) thin films, the depth profile study on Raman spectra of a-Si:H films was carried out. The network ordering evolution in the near surface and interior region of the unirradiated and irradiated a-Si:H films was investigated. The results show that there is a structural improvement in the shortand intermediate-range order towards the surface of the unirradiated a-Si:H films. The amorphous silicon network in the near and interior region becomes more disordered on the shortand intermediate-range scales after being irradiated with high energy electrons. However, the surface of the irradiated films becomes more disordered in comparison with their interior region, indicating that the created defects caused by electron irradiation are concentrated in the near surface of the irradiated films. Annealing eliminates the irradiation effects on a-Si:H thin films and the structural order of the irradiated films is similar to that of the unirradiated ones after being annealed. There exists a structural improvement in the shortand intermediate-range order towards the surface of the irradiated a-Si:H films after being annealed.

  13. NLTE Analysis of High Resolution H-band Spectra. I. Neutral Silicon

    CERN Document Server

    Zhang, Junbo; Pan, Kaike; Prieto, Carlos Allende; Liu, Chao

    2016-01-01

    We investigated the reliability of our silicon atomic model and the influence of non-local thermodynamical equilibrium (NLTE) on the formation of neutral silicon (Si I) lines in the near-infrared (near-IR) H-band. We derived the differential Si abundances for 13 sample stars with high-resolution H-band spectra from the Apache Point Observatory Galactic Evolution Experiment (APOGEE), as well as from optical spectra, both under local thermodynamical equilibrium (LTE) and NLTE conditions. We found that the differences between the Si abundances derived from the H-band and from optical lines for the same stars are less than 0.1 dex when the NLTE effects included, and that NLTE reduces the line-to-line scatter in the H-band spectra for most sample stars. These results suggest that our Si atomic model is appropriate for studying the formation of H-band Si lines. Our calculations show that the NLTE corrections of the Si I H-band lines are negative, i.e. the final Si abundances will be overestimated in LTE. The correc...

  14. High-speed digital ICs - A comparison between silicon and GaAs

    Science.gov (United States)

    Ricco, Bruno

    1986-06-01

    High electron mobility and semi-insulating characteristics make GaAs a semiconductor material ideally suited for very fast logics. Nevertheless, for such purposes it must compete with the fully mature LSI and VLSI technologies of silicon. The choice depends on applications and technology options. If MESFETs are rated against Si MOSFETs and bipolar transistors, the scale of circuit integration plays a fundamental role. For fewer than a few hundred gates per chip, GaAs can provide circuits that are two to four times faster although the cost per bit is significantly higher; thus GaAs circuits seem attractive only for required performances above a few gigahertz (beyond the reach of silicon devices). The brighter perspectives for GaAs come from the potential of heterostructure devices which are under development and showing great promise. Sophisticated processing steps (such as molecular beam epitaxy) are still under development and still need to be assessed regarding their viability for circuit mass production. Various logics are compared.

  15. High-frequency, silicon-based ultrasonic nozzles using multiple Fourier horns.

    Science.gov (United States)

    Tsai, Shirley C; Song, Yu L; Tseng, Terry K; Chou, Yuan F; Chen, Wei J; Tsai, Chen S

    2004-03-01

    This paper presents the design, simulation, and characterization of microfabricated 0.5 MHz, silicon-based, ultrasonic nozzles. Each nozzle is made of a piezoelectric drive section and a silicon resonator consisting of multiple Fourier horns, each with half wavelength design and twice amplitude magnification. Results of finite element three-dimensional (3-D) simulation using a commercial program predicted existence of one resonant frequency of pure longitudinal vibration. Both impedance analysis and measurement of longitudinal vibration confirmed the simulation results with one pure longitudinal vibration mode at the resonant frequency in excellent agreement with the design value. Furthermore, at the resonant frequency, the measured longitudinal vibration amplitude at the nozzle tip increases as the number of Fourier horns (n) increases in good agreement with the theoretical values of 2(n). Using this design, very high vibration amplitude gain at the nozzle tip can be achieved with no reduction in the tip cross-sectional area for contact of liquid to be atomized. Therefore, the required electric drive power should be drastically reduced, decreasing the likelihood of transducer failure in ultrasonic atomization.

  16. Effects of Silicone Hydrogel Contact Lens Application on Corneal High-order Aberration and Visual Guality in Patients with Corneal Opacities

    Directory of Open Access Journals (Sweden)

    Sevda Aydın Kurna

    2012-03-01

    Full Text Available Pur po se: Evaluation of the corneal high-order aberrations and visual quality changes after application of silicone hydrogel contact lenses in patients with corneal opacities due to various etiologies. Ma te ri al and Met hod: Fifteen eyes of 13 patients with corneal opacities were included in the study. During the ophthalmologic examination before and after contact lens application, visual acuity was measured with Snellen acuity chart and contrast sensitivity - with Bailey-Lowie Charts in letters. Aberrations were measured with corneal aberrometer (NIDEK Magellan Mapper under a naturally dilated pupil. Spherical aberration, coma, trefoil, irregular astigmatism and total high-order root mean square (RMS values were recorded. Measurements were repeated with balafilcon A lenses (PureVision 2 HD, B&L on all patients. Re sults: Patient age varied between 23 and 50 years. Two eyes had subepithelial infiltrates due to adenoviral keratitis, 1 had nebulae due to previous infections or trauma, and 2 had Salzmann’s nodular degeneration. We observed a mean increase of 1 line in visual acuity and 5 letters in contrast sensitivity with contact lenses versus glasses in the patients. Mean RMS values of spherical aberration, irregular astigmatism and total high-order aberrations decreased significantly with contact lenses. Dis cus si on: Silicone hydrogel soft contact lenses may improve visual quality by decreasing the corneal aberrations in patients with corneal opacities. (Turk J Ophthalmol 2012; 42: 97-102

  17. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    Science.gov (United States)

    Huang, Yanhui; Schadler, Linda S.

    2016-08-01

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  18. Bendable high-frequency microwave switches formed with single-crystal silicon nanomembranes on plastic substrates

    Science.gov (United States)

    Yuan, Hao-Chih; Qin, Guoxuan; Celler, George K.; Ma, Zhenqiang

    2009-07-01

    This letter presents realization of bendable rf switches operating at microwave frequencies formed with single-crystal Si nanomembranes (SiNMs) on a plastic substrate. Selectively doped 200-nm-thick SiNM is lifted off from silicon-on-insulator and transferred to a polymer substrate to form lateral P-intrinsic-N (PIN) diodes with minimized parasitic resistances. A single-pole single-throw switch, consisting of two PIN diodes connected in a shunt-series configuration, demonstrated very low insertion loss and high isolation from dc up to 20 GHz. The level of performance indicates a promise of properly processed single-crystal semiconductor nanomembranes for high-frequency applications in a number of consumer and military systems.

  19. High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

    Directory of Open Access Journals (Sweden)

    Graham Trevor Reed

    2014-12-01

    Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

  20. High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

    Science.gov (United States)

    Tian, Y.; Shimazoe, K.; Yan, X.; Ueda, O.; Ishikura, T.; Fujiwara, T.; Uesaka, M.; Ohno, M.; Tomita, H.; Yoshihara, Y.; Takahashi, H.

    2016-09-01

    A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.