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Sample records for high power diode

  1. High power diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

    1992-01-01

    Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

  2. High power diode lasers converted to the visible

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.

    2017-01-01

    High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....

  3. Visible high power fiber coupled diode lasers

    Science.gov (United States)

    Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

    2018-02-01

    In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

  4. High Power High Efficiency Diode Laser Stack for Processing

    Science.gov (United States)

    Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

    2018-03-01

    High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

  5. High power diode laser remelting of metals

    International Nuclear Information System (INIS)

    Chmelickova, H; Tomastik, J; Ctvrtlik, R; Supik, J; Nemecek, S; Misek, M

    2014-01-01

    This article is focused on the laser surface remelting of the steel samples with predefined overlapping of the laser spots. The goal of our experimental work was to evaluate microstructure and hardness both in overlapped zone and single pass ones for three kinds of ferrous metals with different content of carbon, cast iron, non-alloy structural steel and tool steel. High power fibre coupled diode laser Laserline LDF 3600-100 was used with robotic guided processing head equipped by the laser beam homogenizer that creates rectangular beam shape with uniform intensity distribution. Each sample was treated with identical process parameters - laser power, beam diameter, focus position, speed of motion and 40% spot overlap. Dimensions and structures of the remelted zone, zone of the partial melting, heat affected zone and base material were detected and measured by means of laser scanning and optical microscopes. Hardness progress in the vertical axis of the overlapped zone from remelted surface layer to base material was measured and compared with the hardness of the single spots. The most hardness growth was found for cast iron, the least for structural steel. Experiment results will be used to processing parameters optimization for each tested material separately.

  6. High-power pure blue laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ohta, M.; Ohizumi, Y.; Hoshina, Y.; Tanaka, T.; Yabuki, Y.; Goto, S.; Ikeda, M. [Development Center, Sony Shiroishi Semiconductor Inc., Miyagi (Japan); Funato, K. [Materials Laboratories, Sony Corporation, Kanagawa (Japan); Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, Kanagawa (Japan)

    2007-06-15

    We successfully developed high-power and long-lived pure blue laser diodes (LDs) having an emission wavelength of 440-450 nm. The pure-blue LDs were grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates. The dislocation density was successfully reduced to {proportional_to}10{sup 6} cm{sup -2} by optimizing the MOCVD growth conditions and the active layer structure. The vertical layer structure was designed to have an absorption loss of 4.9 cm{sup -1} and an internal quantum efficiency of 91%. We also reduced the operating current density to 6 kA/cm{sup 2} under 750 mW continuous-wave operation at 35 C by optimizing the stripe width to 12 {mu}m and the cavity length to 2000 {mu}m. The half lifetimes in constant current mode are estimated to be longer than 10000 h. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. The Beam Characteristics of High Power Diode Laser Stack

    Science.gov (United States)

    Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

    2018-03-01

    Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

  8. High-power green diode laser systems for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André

    propagation parameters and therefore efficiently increases the brightness of compact and cost-effective diode laser systems. The condition of overlapping beams is an ideal scenario for subsequent frequency conversion. Based on sum-frequency generation of two beam combined diode lasers a 3.2 fold increase...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential....... Implementing the developed concept of frequency converted, beam combined diode laser systems will help to overcome the high pump thresholds for ultrabroad bandwidth titanium sapphire lasers, leading towards diode based high-resolution optical coherence tomography with enhanced image quality. In their entirety...

  9. In-volume heating using high-power laser diodes

    NARCIS (Netherlands)

    Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

    2015-01-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface

  10. Advancements of ultra-high peak power laser diode arrays

    Science.gov (United States)

    Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.

    2018-02-01

    Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

  11. High Power Diode Lasers with External Feedback: Overview and Prospects

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael

    2012-01-01

    In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...... with a good beam quality. Tapered diode laser systems with external-cavity feedback around 800 and 1060 nm can deliver more than 2 W output power with diffraction-limited beam quality and can be operated in single-longitudinal mode. These high-brightness, narrow linewidth, and tunable external-cavity diode...... lasers emerge as the next generation of compact lasers that have the potential of replacing conventional high power laser systems in many existing applications....

  12. High average power diode pumped solid state lasers for CALIOPE

    International Nuclear Information System (INIS)

    Comaskey, B.; Halpin, J.; Moran, B.

    1994-07-01

    Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

  13. High-power laser diodes with high polarization purity

    Science.gov (United States)

    Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

    2017-02-01

    Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

  14. Hybrid simulation of electrode plasmas in high-power diodes

    International Nuclear Information System (INIS)

    Welch, Dale R.; Rose, David V.; Bruner, Nichelle; Clark, Robert E.; Oliver, Bryan V.; Hahn, Kelly D.; Johnston, Mark D.

    2009-01-01

    New numerical techniques for simulating the formation and evolution of cathode and anode plasmas have been successfully implemented in a hybrid code. The dynamics of expanding electrode plasmas has long been recognized as a limiting factor in the impedance lifetimes of high-power vacuum diodes and magnetically insulated transmission lines. Realistic modeling of such plasmas is being pursued to aid in understanding the operating characteristics of these devices as well as establishing scaling relations for reliable extrapolation to higher voltages. Here, in addition to kinetic and fluid modeling, a hybrid particle-in-cell technique is described that models high density, thermal plasmas as an inertial fluid which transitions to kinetic electron or ion macroparticles above a prescribed energy. The hybrid technique is computationally efficient and does not require resolution of the Debye length. These techniques are first tested on a simple planar diode then applied to the evolution of both cathode and anode plasmas in a high-power self-magnetic pinch diode. The impact of an intense electron flux on the anode surface leads to rapid heating of contaminant material and diode impedance loss.

  15. High-power non linear frequency converted laser diodes

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Andersen, Peter E.; Hansen, Anders Kragh

    2015-01-01

    We present different methods of generating light in the blue-green spectral range by nonlinear frequency conversion of tapered diode lasers achieving state-of-the-art power levels. In the blue spectral range, we show results using single-pass second harmonic generation (SHG) as well as cavity enh...... enhanced sum frequency generation (SFG) with watt-level output powers. SHG and SFG are also demonstrated in the green spectral range as a viable method to generate up to 4 W output power with high efficiency using different configurations....

  16. Electron diode oscillators for high-power RF generation

    International Nuclear Information System (INIS)

    Humphries, S.

    1989-01-01

    Feedback oscillators have been used since the invention of the vacuum tube. This paper describes the extension of these familiar circuits to the regime of relativistic electron beam diodes. Such devices have potential application for the generation of high power RF radiation in the range 50-250 MHz, 1-10 GW with 20-60% conversion efficiency. This paper reviews the theory of the oscillator and the results of a design study. Calculations for the four-electrode diode with EGUN and EBQ show that good modulations of 30 kA electron beam at 600 kV can be achieved with moderate field stress on the electrodes. Conditions for oscillation have been studied with an in-house transmission line code. A design for a 7.5 GW oscillator at 200 MHz with 25% conversion efficiency is presented

  17. XUV preionization effects in high power magnetically insulated diodes

    International Nuclear Information System (INIS)

    Maenchen, J.; Woodworth, J.R.; Foltz, B.W.

    1985-01-01

    Electrode surface desorption and photoionization by an intense XUV pulse has been shown to dramatically improve a vacuum diode impedance history. The 6-Terawatt Applied-B ion diode experiment on PBFA I is limited by a delay in both diode and ion current initiation. The insulation magnetic field impedes electron crossings which are believed to aid the ion source initiation. The diode is therefore initially a severe overmatch to the accelerator 40-nsec, 2.2-MV, 0.5-ohm pulse. The diode current increases during the pulse, leading to a rapidly falling impedance history. The application of an intense (30 to 50-kW/cm 2 ) XUV flux from an array of sixteen 60-kA spark sources is found to cause immediate diode current flow, resulting in both a greatly improved impedance history and the prompt initiation of an intense higher power ion beam

  18. Tunable high-power narrow-linewidth green external-cavity GaN diode laser

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-01-01

    A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system.......A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system....

  19. High-average-power diode-pumped Yb: YAG lasers

    International Nuclear Information System (INIS)

    Avizonis, P V; Beach, R; Bibeau, C M; Emanuel, M A; Harris, D G; Honea, E C; Monroe, R S; Payne, S A; Skidmore, J A; Sutton, S B

    1999-01-01

    A scaleable diode end-pumping technology for high-average-power slab and rod lasers has been under development for the past several years at Lawrence Livermore National Laboratory (LLNL). This technology has particular application to high average power Yb:YAG lasers that utilize a rod configured gain element. Previously, this rod configured approach has achieved average output powers in a single 5 cm long by 2 mm diameter Yb:YAG rod of 430 W cw and 280 W q-switched. High beam quality (M(sup 2)= 2.4) q-switched operation has also been demonstrated at over 180 W of average output power. More recently, using a dual rod configuration consisting of two, 5 cm long by 2 mm diameter laser rods with birefringence compensation, we have achieved 1080 W of cw output with an M(sup 2) value of 13.5 at an optical-to-optical conversion efficiency of 27.5%. With the same dual rod laser operated in a q-switched mode, we have also demonstrated 532 W of average power with an M(sup 2) and lt; 2.5 at 17% optical-to-optical conversion efficiency. These q-switched results were obtained at a 10 kHz repetition rate and resulted in 77 nsec pulse durations. These improved levels of operational performance have been achieved as a result of technology advancements made in several areas that will be covered in this manuscript. These enhancements to our architecture include: (1) Hollow lens ducts that enable the use of advanced cavity architectures permitting birefringence compensation and the ability to run in large aperture-filling near-diffraction-limited modes. (2) Compound laser rods with flanged-nonabsorbing-endcaps fabricated by diffusion bonding. (3) Techniques for suppressing amplified spontaneous emission (ASE) and parasitics in the polished barrel rods

  20. Diode pumped 1kHz high power Nd:YAG laser with excellent beam quality

    NARCIS (Netherlands)

    Godfried, Herman; Godfried, H.P; Offerhaus, Herman L.

    1997-01-01

    The design and operation of a one kilohertz diode pumped all solid-state Nd:YAG master oscillator power amplifier system with a phase conjugate mirror is presented. The setup allows high power scaling without reduction in beam quality.

  1. The thermal management of high power light emitting diodes

    Science.gov (United States)

    Hsu, Ming-Seng; Huang, Jen-Wei; Shyu, Feng-Lin

    2012-10-01

    Thermal management had an important influence not only in the life time but also in the efficiency of high power light emitting diodes (HPLEDs). 30 watts in a single package have become standard to the industrial fabricating of HPLEDs. In this study, we fabricated both of the AlN porous films, by vacuum sputtering, soldered onto the HPLEDs lamp to enhance both of the heat transfer and heat dissipation. In our model, the ceramic enables transfer the heat from electric device to the aluminum plate quickly and the porous increase the quality of the thermal dissipation between the PCB and aluminum plate, as compared to the industrial processing. The ceramic films were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray diffraction (XRD) diagram analysis reveals those ceramic phases were successfully grown onto the individual substrates. The morphology of ceramic films was investigated by the atomic force microscopy (AFM). The results show those porous films have high thermal conduction to the purpose. At the same time, they had transferred heat and limited work temperature, about 70°, of HPLEDs successfully.

  2. Characterization of High-power Quasi-cw Laser Diode Arrays

    Science.gov (United States)

    Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

    2005-01-01

    NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

  3. High Power Ga2O3-based Schottky Diode, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Program will develop a new generation of radiation hard high-power high-voltage Ga2O3-based Schottky diode, which is suitable for applications in the space...

  4. Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

    Science.gov (United States)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

    2005-01-01

    Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

  5. High power CW output from low confinement asymmetric structure diode laser

    NARCIS (Netherlands)

    Iordache, G.; Buda, M.; Acket, G.A.; Roer, van de T.G.; Kaufmann, L.M.F.; Karouta, F.; Jagadish, C.; Tan, H.H.

    1999-01-01

    High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 µm wide stripe 1-3 mm long diode lasers were studied. 1.8 W

  6. A high power gain switched diode laser oscillator and amplifier for the CEBAF polarized electron injector

    International Nuclear Information System (INIS)

    Poelker, M.; Hansknecht, J.

    1996-01-01

    The photocathode in the polarized electron source at Jefferson Lab is illuminated with pulsed laser light from a gain switched diode laser and diode optical amplifier. Laser pulse repetition rates up to 2,000 MHz, optical pulsewidths between 31 and 123 ps, and average power > 100 mW are demonstrated. The laser system is highly reliable and completely remotely controlled

  7. Thermal properties of high-power diode lasers investigated by means of high resolution thermography

    International Nuclear Information System (INIS)

    Kozłowska, Anna; Maląg, Andrzej; Dąbrowska, Elżbieta; Teodorczyk, Marian

    2012-01-01

    In the present work, thermal effects in high-power diode lasers are investigated by means of high resolution thermography. Thermal properties of the devices emitting in the 650 nm and 808 nm wavelength ranges are compared. The different versions of the heterostructure design are analyzed. The results show a lowering of active region temperature for diode lasers with asymmetric heterostructure scheme with reduced quantum well distance from the heterostructure surface (and the heat sink). Optimization of technological processes allowed for the improvement of the device performance, e.g. reduction of solder non-uniformities and local defect sites at the mirrors which was visualized by the thermography.

  8. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

  9. Novel High Power Type-I Quantum Well Cascade Diode Lasers

    Science.gov (United States)

    2017-08-30

    Novel High Power Type-I Quantum Well Cascade Diode Lasers The views, opinions and/or findings contained in this report are those of the author(s...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6... High Power Type-I Quantum Well Cascade Diode Lasers Report Term: 0-Other Email: leon.shterengas@stonybrook.edu Distribution Statement: 1-Approved

  10. Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

    Directory of Open Access Journals (Sweden)

    Hsu Chih-Neng

    2013-01-01

    Full Text Available This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.

  11. Very-High Efficiency, High Power Laser Diodes, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — AdTech Photonics, in collaboration with the Center for Advanced Studies in Photonics Research (CASPR) at UMBC, is pleased to submit this proposal entitled ?Very-High...

  12. Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

    Science.gov (United States)

    Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

    2017-02-01

    High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

  13. Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

    Science.gov (United States)

    Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

    2014-10-01

    The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

  14. Experiments on high-power ion beam generation in self-insulated diodes

    International Nuclear Information System (INIS)

    Bystritskii, V.M.; Glyshko, Yu.A.; Sinerbrjukhov, A.A.; Kharlov, A.V.

    1991-01-01

    Experimental results are given on high-power ion beams (HPIB) generation in a vacuum spherical focusing diode with self-magnetic insulation, obtained from the nanosecond accelerator PARUS with 0.2-TW power and 60-ns pulse duration for a matched load. When the passive plasma source of the ions was used, the efficiency of the HPIB generation was measured to be as high as 20% for 700-kV diode voltage and 10-kA/cm 2 beam density in the focal plane. The application of a coaxial plasma opening switch (POS) prior to the diode resulted in a factor-of-1.8 increase in the diode power in comparison with a match operation in the absence of a POS. (author)

  15. High power multiple wavelength diode laser stack for DPSSL application without temperature control

    Science.gov (United States)

    Hou, Dong; Yin, Xia; Wang, Jingwei; Chen, Shi; Zhan, Yun; Li, Xiaoning; Fan, Yingmin; Liu, Xingsheng

    2018-02-01

    High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.

  16. Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

    Science.gov (United States)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

    2004-01-01

    Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

  17. Water Vapour Propulsion Powered by a High-Power Laser-Diode

    Science.gov (United States)

    Minami, Y.; Uchida, S.

    Most of the laser propulsion schemes now being proposed and developed assume neither power supplies nor on-board laser devices and therefore are bound to remote laser stations like a kite via a laser beam “string”. This is a fatal disadvantage for a space vehicle that flies freely though it is often said that no need of installing an energy source is an advantage of a laser propulsion scheme. The possibility of an independent laser propulsion space vehicle that carries a laser source and a power supply on board is discussed. This is mainly due to the latest development of high power laser diode (LD) technology. Both high specific impulse-low thrust mode and high thrust-low specific impulse mode can be selected by controlling the laser output by using vapour or water as a propellant. This mode change can be performed by switching between a high power continuous wave (cw), LD engine for high thrust with a low specific impulse mode and high power LD pumping Q-switched Nd:YAG laser engine for low thrust with the high specific impulse mode. This paper describes an Orbital Transfer Vehicle equipped with the above-mentioned laser engine system and fuel cell that flies to the Moon from a space platform or space hotel in Earth orbit, with cargo shipment from lunar orbit to the surface of the Moon, including the possibility of a sightseeing trip.

  18. Spectral, spatial and temporal control of high-power diode lasers through nonlinear optical feedback

    NARCIS (Netherlands)

    van Voorst, P.D.

    2008-01-01

    A high-power diode laser offers multi-Watt output power from a small and efficient device, which makes them an interesting source for numerous applications. The spatial and spectral output however, are of reduced quality which limits the applicability. This limited quality is connected to the design

  19. High-Power 1180-nm GaInNAs DBR Laser Diodes

    DEFF Research Database (Denmark)

    Aho, Antti T.; Viheriala, Jukka; Korpijarvi, Ville-Markus

    2017-01-01

    We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side...... and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow-orange wavelengths....

  20. System and method for high power diode based additive manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

    2018-01-02

    A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

  1. System and method for high power diode based additive manufacturing

    Science.gov (United States)

    El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

    2016-04-12

    A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

  2. High power diode lasers emitting from 639 nm to 690 nm

    Science.gov (United States)

    Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

    2014-03-01

    There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

  3. Numerical simulations of novel high-power high-brightness diode laser structures

    Science.gov (United States)

    Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

    2001-07-01

    One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

  4. The impact of external optical feedback on the degradation behavior of high-power diode lasers

    DEFF Research Database (Denmark)

    Hempel, Martin; Chi, Mingjun; Petersen, Paul Michael

    2013-01-01

    The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...... unaffected, severe impact is observed to the cladding layers and the waveguide. Consequently hardening of diode lasers for operation under external optical feedback must necessarily involve claddings and waveguide, into which the quantum well is embedded.......The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...

  5. High-power fiber-coupled 100W visible spectrum diode lasers for display applications

    Science.gov (United States)

    Unger, Andreas; Küster, Matthias; Köhler, Bernd; Biesenbach, Jens

    2013-02-01

    Diode lasers in the blue and red spectral range are the most promising light sources for upcoming high-brightness digital projectors in cinemas and large venue displays. They combine improved efficiency, longer lifetime and a greatly improved color space compared to traditional xenon light sources. In this paper we report on high-power visible diode laser sources to serve the demands of this emerging market. A unique electro-optical platform enables scalable fiber coupled sources at 638 nm with an output power of up to 100 W from a 400 μm NA0.22 fiber. For the blue diode laser we demonstrate scalable sources from 5 W to 100 W from a 400 μm NA0.22 fiber.

  6. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  7. Degradation Processes in High-Power Diode Lasers under External Optical Feedback

    DEFF Research Database (Denmark)

    Tomm, Jens. W.; Hempel, Martin; Petersen, Paul Michael

    2013-01-01

    The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually experiences the highest total optical load remains unaffected by the aging, while severe impact...

  8. Temperature evaluation of dental implant surface irradiated with high-power diode laser.

    Science.gov (United States)

    Rios, F G; Viana, E R; Ribeiro, G M; González, J C; Abelenda, A; Peruzzo, D C

    2016-09-01

    The prevalence of peri-implantitis and the absence of a standard approach for decontamination of the dental implant surface have led to searches for effective therapies. Since the source of diode lasers is portable, has reduced cost, and does not cause damage to the titanium surface of the implant, high-power diode lasers have been used for this purpose. The effect of laser irradiation on the implants is the elevation of the temperature surface. If this elevation exceeds 47 °C, the bone tissue is irreversibly damaged, so for a safety therapy, the laser parameters should be controlled. In this study, a diode laser of GaAsAl was used to irradiate titanium dental implants, for powers 1.32 to 2.64 W (real) or 2.00 to 4.00 W (nominal), in continuous/pulsed mode DC/AC, with exposure time of 5/10 s, with/without air flow for cooling. The elevation of the temperature was monitored in real time in two positions: cervical and apical. The best results for decontamination using a 968-nm diode laser were obtained for a power of 1.65 and 1.98 W (real) for 10 s, in DC or AC mode, with an air flow of 2.5 l/min. In our perspective in this article, we determine a suggested approach for decontamination of the dental implant surface using a 968-nm diode laser.

  9. A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm diodes

    International Nuclear Information System (INIS)

    Yan, S; Yan, X; Yu, H; Zhang, L; Guo, L; Sun, W; Hou, W; Lin, X

    2013-01-01

    We present a high power 880 nm diode-pumped passively mode-locked Nd:YVO 4 oscillator, followed by an 880 nm diode-pumped Nd:YVO 4 amplifier. In the oscillator, a maximum power of 8.7 W was obtained with a repetition rate of 63 MHz and pulse duration of 32 ps, corresponding to an optical efficiency of 36%. The beam quality factors M 2 were measured to be M x 2 =1.2 and M y 2 =1.1 9, respectively. The amplifier generated up to 19.1 W output power with the pulse width and repetition rate remaining unaltered after amplification. (paper)

  10. Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

    Science.gov (United States)

    Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

    2016-03-01

    Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

  11. Powering laser diode systems

    CERN Document Server

    Trestman, Grigoriy A

    2017-01-01

    This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

  12. Improving Reliability of High Power Quasi-CW Laser Diode Arrays Operating in Long Pulse Mode

    Science.gov (United States)

    Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

    2006-01-01

    Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data of the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

  13. High power cascade diode lasers emitting near 2 μm

    Energy Technology Data Exchange (ETDEWEB)

    Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

    2016-03-28

    High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

  14. Mechanisms of metallization degradation in high power diodes

    DEFF Research Database (Denmark)

    Brincker, Mads; Kristensen, Peter Kjær; Pedersen, Kristian Bonderup

    2016-01-01

    Under operation the topside metallization of power electronic chips is commonly observed to degrade and thereby affecta device's electrical characteristics. However, the mechanisms of the degradation process and the role of environmental factors are not yet fully understood. In this work, we...

  15. Amorphous structure evolution of high power diode laser cladded Fe–Co–B–Si–Nb coatings

    International Nuclear Information System (INIS)

    Zhu Yanyan; Li Zhuguo; Huang Jian; Li Min; Li Ruifeng; Wu Yixiong

    2012-01-01

    Highlights: ► Fabricated amorphous composited coating by high power diode laser cladding with single track. ► Lower dilution and higher scanning speed are desired to obtain higher amorphous phase fraction. ► White spots phase with high content of Nb embedded in the amorphous matrix. - Abstract: Fe–Co–B–Si–Nb coatings were fabricated on the surface of low carbon steel using high power diode laser cladding of [(Fe 0.5 Co 0.5 ) 0.75 B 0.2 Si 0.05 ] 95.7 Nb 4.3 amorphous powders at three different scanning speeds of 6, 17 and 50 m/s. At each scanning speed, laser power was optimized to obtain low dilution ratio. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy with energy dispersive spectrometer and electron probe micro analysis were carried out to characterize the microstructure and chemical composition of the cladded coatings. Differential scanning calorimetry was also carried out to investigate the fraction of the amorphous phase. The results showed that dilution ratio and scanning speed were the two main factors for fabricating Fe–Co–B–Si–Nb amorphous coating by high power diode laser cladding. Low dilution ratio was crucial for the formation of amorphous phase. When the dilution ratio was low, the fraction of amorphous phase in the cladded coatings increased upon increasing the scanning speed.

  16. A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

    Science.gov (United States)

    Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

    2018-01-01

    Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

  17. Water cooling of high power light emitting diode

    DEFF Research Database (Denmark)

    Sørensen, Henrik

    2012-01-01

    The development in light technologies for entertainment is moving towards LED based solutions. This progress is not without problems, when more than a single LED is used. The amount of generated heat is often in the same order as in a conventional discharge lamp, but the allowable operating...... temperature is much lower. In order to handle the higher specific power (W/m3) inside the LED based lamps cold plates were designed and manufactured. 6 different designs were analyzed through laboratory experiments and their performances were compared. 5 designs cover; traditional straight mini channel, S...

  18. Methods for slow axis beam quality improvement of high power broad area diode lasers

    Science.gov (United States)

    An, Haiyan; Xiong, Yihan; Jiang, Ching-Long J.; Schmidt, Berthold; Treusch, Georg

    2014-03-01

    For high brightness direct diode laser systems, it is of fundamental importance to improve the slow axis beam quality of the incorporated laser diodes regardless what beam combining technology is applied. To further advance our products in terms of increased brightness at a high power level, we must optimize the slow axis beam quality despite the far field blooming at high current levels. The later is caused predominantly by the built-in index step in combination with the thermal lens effect. Most of the methods for beam quality improvements reported in publications sacrifice the device efficiency and reliable output power. In order to improve the beam quality as well as maintain the efficiency and reliable output power, we investigated methods of influencing local heat generation to reduce the thermal gradient across the slow axis direction, optimizing the built-in index step and discriminating high order modes. Based on our findings, we have combined different methods in our new device design. Subsequently, the beam parameter product (BPP) of a 10% fill factor bar has improved by approximately 30% at 7 W/emitter without efficiency penalty. This technology has enabled fiber coupled high brightness multi-kilowatt direct diode laser systems. In this paper, we will elaborate on the methods used as well as the results achieved.

  19. Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

    Science.gov (United States)

    Liu, Bo; Braiman, Yehuda

    2018-05-01

    We introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ∼25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. We found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

  20. Defect engineering for 650 nm high-power AlGaInP laser diodes

    International Nuclear Information System (INIS)

    Kim, D.S.; Kim, K.C.; Shin, Y.C.; Kang, D.H.; Kim, B.J.; Kim, Y.M.; Park, Y.; Kim, T.G.

    2006-01-01

    To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 deg. C. The characteristic temperatures (T ) were 212 K for 25-60 deg. C and 106 K over 60 deg. C

  1. High-power diode-side-pumped intracavity-frequency-doubled continuous wave 532 nm laser

    International Nuclear Information System (INIS)

    Zhang Yuping; Zhang Huiyun; Zhong Kai; Li Xifu; Wang Peng; Yao Jianquan

    2007-01-01

    An efficient and high-power diode-side-pumped cw 532 nm green laser based on a V-shaped cavity geometry, and capable of generating 22.7 W green radiation with optical conversion efficiency of 8.31%, has been demonstrated. The laser is operated with rms noise amplitude of less than 1% and with M 2 -parameter of about 6.45 at the top of the output power. This laser has the potential for scaling to much higher output power. (authors)

  2. Using high-power light emitting diodes for photoacoustic imaging

    DEFF Research Database (Denmark)

    Hansen, R. S.

    2011-01-01

    for the experiment consists of a 3mm high x 5mm wide slice of green colored gelatine overlaid by a 3cm layer of colorless gelatine. The light pulses from the LED is focused on the green gelatine. The photoacoustic response from the green gelatine is detected by a single transducer on the opposite (top) surface...

  3. Emission parameters and thermal management of single high-power 980-nm laser diodes

    International Nuclear Information System (INIS)

    Bezotosnyi, V V; Krokhin, O N; Oleshchenko, V A; Pevtsov, V F; Popov, Yu M; Cheshev, E A

    2014-01-01

    We report emission parameters of high-power cw 980-nm laser diodes (LDs) with a stripe contact width of 100 μm. On copper heat sinks of the C-mount type, a reliable output power of 10 W is obtained at a pump current of 10 A. Using a heat flow model derived from analysis of calculated and measured overall efficiencies at pump currents up to 20 A, we examine the possibility of raising the reliable power limit of a modified high-power LD mounted on heat sinks of the F-mount type using submounts with optimised geometric parameters and high thermal conductivity. The possibility of increasing the maximum reliable cw output power to 20 W with the use of similar laser crystals is discussed. (lasers)

  4. Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

    Science.gov (United States)

    Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

    2013-01-01

    Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

  5. Developing a Methodology for Elaborating a Pulsed Optical Safety Area for High Power Laser Diodes

    National Research Council Canada - National Science Library

    Yankov, Plamen

    2006-01-01

    The laser diodes are efficient sources of optical radiation. The maximum optical peak power depends on the pulse duration of the driving current pulse - reducing the pulse duration the safety peak power is increased...

  6. Widely Tunable High-Power Tapered Diode Laser at 1060 nm

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Sumpf, Bernd; Erbert, Götz

    2011-01-01

    We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser...... operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range....

  7. Use of high-power diode lasers for hardening and thermal conduction welding of metals

    Science.gov (United States)

    Klocke, Fritz; Demmer, Axel; Zaboklicki, A.

    1997-08-01

    CO2 and Nd:YAG high power lasers have become established as machining tools in industrial manufacturing over the last few years. The most important advantages compared to conventional processing techniques lie in the absence of forces introduced by the laser into the workpiece and in the simple arid highly accurate control in terms ofpositioning and timing making the laser a universally applicable, wear-free and extremely flexible tool /1,2/. The laser can be utilised costeffectively in numerous manufacturing processes but there are also further applications for the laser which produce excellent results from a technical point of view, but are not justified in terms of cost. The extensive use of lasers, particularly in small companies and workshops, is hindered by two main reasons: the complexity and size ofthe laser source and plant and the high investment costs /3/. A new generation of lasers, the high power diode lasers (HDL), combines high performance with a compact design, making the laser a cheap and easy to use tool with many applications /3,4,5,6/. In the diode laser, the laser beam is generated by a microelectronic diode which transforms electrical energy directly into laser energy. Diode lasers with low power outputs have, for some time, been making their mark in our everyday lives: they are used in CD players, laser printers and scanners at cash tills. Modern telecommunications would be impossible without these lasers which enable information to be transmitted in the form oflight impulses through optical fibres. They can also be found in compact precision measurement instrumentation - range fmders, interferometers and pollutant analysis devices /3,6/. In the field of material processing, the first applications ofthe laser, such as for soldering, inscribing, surface hardening and plastic or heat conduction welding, will exceed the limits ofthe relatively low performance output currently available. The diode laser has a shorter wavelength than the CO2 and

  8. Improvements of high-power diode laser line generators open up new application fields

    Science.gov (United States)

    Meinschien, J.; Bayer, A.; Bruns, P.; Aschke, L.; Lissotschenko, V. N.

    2009-02-01

    Beam shaping improvements of line generators based on high power diode lasers lead to new application fields as hardening, annealing or cutting of various materials. Of special interest is the laser treatment of silicon. An overview of the wide variety of applications is presented with special emphasis of the relevance of unique laser beam parameters like power density and beam uniformity. Complementary to vision application and plastic processing, these new application markets become more and more important and can now be addressed by high power diode laser line generators. Herewith, a family of high power diode laser line generators is presented that covers this wide spectrum of application fields with very different requirements, including new applications as cutting of silicon or glass, as well as the beam shaping concepts behind it. A laser that generates a 5m long and 4mm wide homogeneous laser line is shown with peak intensities of 0.2W/cm2 for inspection of railway catenaries as well as a laser that generates a homogeneous intensity distribution of 60mm x 2mm size with peak intensities of 225W/cm2 for plastic processing. For the annealing of silicon surfaces, a laser was designed that generates an extraordinary uniform intensity distribution with residual inhomogeneities (contrast ratio) of less than 3% over a line length of 11mm and peak intensities of up to 75kW/cm2. Ultimately, a laser line is shown with a peak intensity of 250kW/cm2 used for cutting applications. Results of various application tests performed with the above mentioned lasers are discussed, particularly the surface treatment of silicon and the cutting of glass.

  9. A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

    International Nuclear Information System (INIS)

    Chen Ping; Zhao De-Gang; Feng Mei-Xin; Jiang De-Sheng; Liu Zong-Shun; Yang Hui; Zhang Li-Qun; Li De-Yao; Liu Jian-Ping; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun

    2013-01-01

    An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A

  10. Eye safe high power laser diode in the 1410-1550nm range

    Science.gov (United States)

    Boucart, Julien; de Largy, Brian; Kearley, Mark; Lichtenstein, Norbert

    2010-02-01

    The demand for high power lasers emitting in the 14xx-15xxnm range is growing for applications in fields such as medical or homeland security. We demonstrate high power laser diodes with emission at 1430, 1470 and 1560 nm. Single multimode emitters at 1470nm emit about 3.5W in CW operation. Power conversion efficiency can reach values as high as 38.5%. With this base material, single and multi-emitter fiber coupled modules are built. Additionally, bars on passive and microchannel coolers are fabricated that deliver 25W and 38W respectively in CW mode, while obtaining more than 80 W in pulsed mode. All reliability tests show an outstanding stability of the material with no signs of wearout after 3750 hrs under strong acceleration conditions.

  11. Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

    Science.gov (United States)

    Kim, Younghyun; Sung, Yunsu; Yang, Jung-Tack; Choi, Woo-Young

    2018-02-01

    The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

  12. High-power light-emitting diode based facility for plant cultivation

    Energy Technology Data Exchange (ETDEWEB)

    Tamulaitis, G [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Duchovskis, P [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Bliznikas, Z [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Breive, K [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Ulinskaite, R [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Brazaityte, A [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Novickovas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Zukauskas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania)

    2005-09-07

    Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated.

  13. High-power light-emitting diode based facility for plant cultivation

    International Nuclear Information System (INIS)

    Tamulaitis, G; Duchovskis, P; Bliznikas, Z; Breive, K; Ulinskaite, R; Brazaityte, A; Novickovas, A; Zukauskas, A

    2005-01-01

    Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated

  14. High power diode pumped solid state (DPSS) laser systems active media robust modeling and analysis

    Science.gov (United States)

    Kashef, Tamer M.; Mokhtar, Ayman M.; Ghoniemy, Samy A.

    2018-02-01

    Diode side-pumped solid-state lasers have the potential to yield high quality laser beams with high efficiency and reliability. This paper summarizes the results of simulation of the most predominant active media that are used in high power diode pumped solid-state (DPSS) laser systems. Nd:YAG, Nd:glass, and Nd:YLF rods laser systems were simulated using the special finite element analysis software program LASCAD. A performance trade off analysis for Nd:YAG, Nd:glass, and Nd:YLF rods was performed in order to predict the system optimized parameters and to investigate thermally induced thermal fracture that may occur due to heat load and mechanical stress. The simulation results showed that at the optimized values Nd:YAG rod achieved the highest output power of 175W with 43% efficiency and heat load of 1.873W/mm3. A negligible changes in laser output power, heat load, stress, and temperature distributions were observed when the Nd:YAG rod length was increased from 72 to 80mm. Simulation of Nd:glass at different rod diameters at the same pumping conditions showed better results for mechanical stress and thermal load than that of Nd:YAG and Nd:YLF which makes it very suitable for high power laser applications especially for large rod diameters. For large rod diameters Nd:YLF is mechanically weaker and softer crystal compared to Nd:YAG and Nd:glass due to its poor thermomechanical properties which limits its usage to only low to medium power systems.

  15. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Erbert, G.; Sumpf, B.

    2010-01-01

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

  16. Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

    Science.gov (United States)

    Ji, Jae-Hoon; Jo, GaeHun; Ha, Jae-Geun; Koo, Sang-Mo; Kamiko, Masao; Hong, JunHee; Koh, Jung-Hyuk

    2018-09-01

    In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

  17. High-Power DFB Diode Laser-Based CO-QEPAS Sensor: Optimization and Performance

    Directory of Open Access Journals (Sweden)

    Yufei Ma

    2018-01-01

    Full Text Available A highly sensitive carbon monoxide (CO trace gas sensor based on quartz-enhanced photoacoustic spectroscopy (QEPAS was demonstrated. A high-power distributed feedback (DFB, continuous wave (CW 2.33 μm diode laser with an 8.8 mW output power was used as the QEPAS excitation source. By optimizing the modulation depth and adding an optimum micro-resonator, compared to a bare quartz tuning fork (QTF, a 10-fold enhancement of the CO-QEPAS signal amplitude was achieved. When water vapor acting as a vibrational transfer catalyst was added to the target gas, the signal was further increased by a factor of ~7. A minimum detection limit (MDL of 11.2 ppm and a calculated normalized noise equivalent absorption (NNEA coefficient of 1.8 × 10−5 cm−1W/√Hz were obtained for the reported CO-QEPAS sensor.

  18. High-Power DFB Diode Laser-Based CO-QEPAS Sensor: Optimization and Performance.

    Science.gov (United States)

    Ma, Yufei; Tong, Yao; He, Ying; Yu, Xin; Tittel, Frank K

    2018-01-04

    A highly sensitive carbon monoxide (CO) trace gas sensor based on quartz-enhanced photoacoustic spectroscopy (QEPAS) was demonstrated. A high-power distributed feedback (DFB), continuous wave (CW) 2.33 μm diode laser with an 8.8 mW output power was used as the QEPAS excitation source. By optimizing the modulation depth and adding an optimum micro-resonator, compared to a bare quartz tuning fork (QTF), a 10-fold enhancement of the CO-QEPAS signal amplitude was achieved. When water vapor acting as a vibrational transfer catalyst was added to the target gas, the signal was further increased by a factor of ~7. A minimum detection limit (MDL) of 11.2 ppm and a calculated normalized noise equivalent absorption (NNEA) coefficient of 1.8 × 10 -5 cm -1 W/√Hz were obtained for the reported CO-QEPAS sensor.

  19. Efficient high power operation of erbium 3 µm fibre laser diode-pumped at 975 nm

    NARCIS (Netherlands)

    Jackson, S.D.; King, T.A.; Pollnau, Markus

    2000-01-01

    Efficient CW operation of a 2.71 um Er,Pr:ZBLAN double-clad fibre laser pumped with a single diode laser operating at a wavelength of 975 nm is described. A maximum output power of 0.5 W and a slope efficiency of 25% (with respect to the launched pump power) were obtained. Threshold pump powers of <

  20. High-power direct diode laser output by spectral beam combining

    Science.gov (United States)

    Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao

    2018-03-01

    We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

  1. Emission properties of diode laser bars during pulsed high-power operation

    International Nuclear Information System (INIS)

    Hempel, Martin; Tomm, Jens W; Elsaesser, Thomas; Hennig, Petra

    2011-01-01

    High-power diode laser bars (cm-bars) are subjected to single pulse step tests carried out up to and beyond their ultimate limits of operation. Laser nearfields and thermal behaviour are monitored for pulse widths in the 10–100 µs range with streak- and thermo-cameras, respectively. Thresholds of catastrophic optical damage are determined, and their dependence on the length of the injected current pulses is explained qualitatively. This approach permits testing the hardness of facet coatings of cm-bars with or without consideration of accidental single pre-damaged emitter failure effects and thermal crosstalk between the emitters. This allows for the optimization of pulsed operation parameters, helps limiting sudden degradation and provides insight into the mechanisms governing the device emission behaviour at ultimate output powers. (fast track communication)

  2. Pulsed operation of high-power light emitting diodes for imaging flow velocimetry

    International Nuclear Information System (INIS)

    Willert, C; Klinner, J; Moessner, S; Stasicki, B

    2010-01-01

    High-powered light emitting diodes (LED) are investigated for possible uses as light sources in flow diagnostics, in particular, as an alternative to laser-based illumination in particle imaging flow velocimetry in side-scatter imaging arrangements. Recent developments in solid state illumination resulted in mass-produced LEDs that provide average radiant power in excess of 10 W. By operating these LEDs with short duration, pulsed currents that are considerably beyond their continuous current damage threshold, light pulses can be generated that are sufficient to illuminate and image micron-sized particles in flow velocimetry. Time-resolved PIV measurements in water at a framing rate of 2kHz are presented. The feasibility of LED-based PIV measurements in air is also demonstrated

  3. Analysis of High-Power Diode Laser Heating Effects on HY-80 Steel for Laser Assisted Friction Stir Welding Applications

    Energy Technology Data Exchange (ETDEWEB)

    Wiechec, Maxwell; Baker, Brad; McNelley, Terry; Matthews, Manyalibo; Rubenchik, Alexander; Rotter, Mark; Beach, Ray; Wu, Sheldon

    2017-01-01

    In this research, several conditions of high power diode laser heated HY-80 steel were characterized to determine the viability of using such lasers as a preheating source before friction stir welding in order to reduce frictional forces thereby reducing tool wear and increasing welding speeds. Differences in microstructures within heat affected zones were identified at specific laser powers and traverse speeds. Vickers hardness values were recorded and analyzed to validate the formation of additional martensite in diode laser heated regions of HY-80 steel. Conditions that produced little to no additional martensite were identified and relationships among high power diode laser power, traverse speed, and martensite formation were determined. The development of heat affected zones, change in grain structure, and creation of additional martensite in HY-80 can be prevented through the optimization of laser amperage and transverse speed.

  4. Modular high power diode lasers with flexible 3D multiplexing arrangement optimized for automated manufacturing

    Science.gov (United States)

    Könning, Tobias; Bayer, Andreas; Plappert, Nora; Faßbender, Wilhelm; Dürsch, Sascha; Küster, Matthias; Hubrich, Ralf; Wolf, Paul; Köhler, Bernd; Biesenbach, Jens

    2018-02-01

    A novel 3-dimensional arrangement of mirrors is used to re-arrange beams from 1-D and 2-D high power diode laser arrays. The approach allows for a variety of stacking geometries, depending on individual requirements. While basic building blocks, including collimating optics, always remain the same, most adaptations can be realized by simple rearrangement of a few optical components. Due to fully automated alignment processes, the required changes can be realized in software by changing coordinates, rather than requiring customized mechanical components. This approach minimizes development costs due to its flexibility, while reducing overall product cost by using similar building blocks for a variety of products and utilizing a high grade of automation. The modules can be operated with industrial grade water, lowering overall system and maintenance cost. Stackable macro coolers are used as the smallest building block of the system. Each cooler can hold up to five diode laser bars. Micro optical components, collimating the beam, are mounted directly to the cooler. All optical assembly steps are fully automated. Initially, the beams from all laser bars propagate in the same direction. Key to the concept is an arrangement of deflectors, which re-arrange the beams into a 2-D array of the desired shape and high fill factor. Standard multiplexing techniques like polarization- or wavelengths-multiplexing have been implemented as well. A variety of fiber coupled modules ranging from a few hundred watts of optical output power to multiple kilowatts of power, as well as customized laser spot geometries like uniform line sources, have been realized.

  5. 970-nm ridge waveguide diode laser bars for high power DWBC systems

    Science.gov (United States)

    Wilkens, Martin; Erbert, Götz; Wenzel, Hans; Knigge, Andrea; Crump, Paul; Maaßdorf, Andre; Fricke, Jörg; Ressel, Peter; Strohmaier, Stephan; Schmidt, Berthold; Tränkle, Günther

    2018-02-01

    de lasers are key components in material processing laser systems. While mostly used as pump sources for solid state or fiber lasers, direct diode laser systems using dense wavelength multiplexing have come on the market in recent years. These systems are realized with broad area lasers typically, resulting in beam quality inferior to disk or fiber lasers. We will present recent results of highly efficient ridge waveguide (RW) lasers, developed for dense-wavelength-beamcombining (DWBC) laser systems expecting beam qualities comparable to solid state laser systems and higher power conversion efficiencies (PCE). The newly developed RW lasers are based on vertical structures with an extreme double asymmetric large optical cavity. Besides a low vertical divergence these structures are suitable for RW-lasers with (10 μm) broad ridges, emitting in a single mode with a good beam quality. The large stripe width enables a lateral divergence below 10° (95 % power content) and a high PCE by a comparably low series resistance. We present results of single emitters and small test arrays under different external feedback conditions. Single emitters can be tuned from 950 nm to 975 nm and reach 1 W optical power with more than 55 % PCE and a beam quality of M2 < 2 over the full wavelength range. The spectral width is below 30 pm FWHM. 5 emitter arrays were stabilized using the same setup. Up to now we reached 3 W optical power, limited by power supply, with 5 narrow spectral lines.

  6. High power visible diode laser for the treatment of eye diseases by laser coagulation

    Science.gov (United States)

    Heinrich, Arne; Hagen, Clemens; Harlander, Maximilian; Nussbaumer, Bernhard

    2015-03-01

    We present a high power visible diode laser enabling a low-cost treatment of eye diseases by laser coagulation, including the two leading causes of blindness worldwide (diabetic retinopathy, age-related macular degeneration) as well as retinopathy of prematurely born children, intraocular tumors and retinal detachment. Laser coagulation requires the exposure of the eye to visible laser light and relies on the high absorption of the retina. The need for treatment is constantly increasing, due to the demographic trend, the increasing average life expectancy and medical care demand in developing countries. The World Health Organization reacts to this demand with global programs like the VISION 2020 "The right to sight" and the following Universal Eye Health within their Global Action Plan (2014-2019). One major point is to motivate companies and research institutes to make eye treatment cheaper and easily accessible. Therefore it becomes capital providing the ophthalmology market with cost competitive, simple and reliable technologies. Our laser is based on the direct second harmonic generation of the light emitted from a tapered laser diode and has already shown reliable optical performance. All components are produced in wafer scale processes and the resulting strong economy of scale results in a price competitive laser. In a broader perspective the technology behind our laser has a huge potential in non-medical applications like welding, cutting, marking and finally laser-illuminated projection.

  7. Combining high power diode lasers using fiber bundles for beam delivery in optoacoustic endoscopy applications

    Science.gov (United States)

    Gawali, Sandeep Babu; Leggio, Luca; Sánchez, Miguel; Rodríguez, Sergio; Dadrasnia, Ehsan; Gallego, Daniel C.; Lamela, Horacio

    2016-05-01

    Optoacoustic (OA) effect refers to the generation of the acoustic waves due to absorption of light energy in a biological tissue. The incident laser pulse is absorbed by the tissue, resulting in the generation of ultrasound that is typically detected by a piezoelectric detector. Compared to other techniques, the advantage of OA imaging (OAI) technique consists in combining the high resolution of ultrasound technique with the high contrast of optical imaging. Generally, Nd:YAG and OPO systems are used for the generation of OA waves but their use in clinical environment is limited for many aspects. On the other hand, high-power diode lasers (HPDLs) emerge as potential alternative. However, the power of HPDLs is still relatively low compared to solid-state lasers. We show a side-by-side combination of several HPDLs in an optical fiber bundle to increase the amount of power for OA applications. Initially, we combine the output optical power of several HPDLs at 905 nm using two 7 to 1 round optical fiber bundles featuring a 675 μm and 1.2 mm bundle aperture. In a second step, we couple the output light of these fiber bundles to a 600 μm core diameter endoscopic fiber, reporting the corresponding coupling efficiencies. The fiber bundles with reasonable small diameter are likely to be used for providing sufficient light energy to potential OA endoscopy (OAE) applications.

  8. Green high-power tunable external-cavity GaN diode laser at 515 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-01-01

    A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam...... incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode...... laser system....

  9. 16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers

    DEFF Research Database (Denmark)

    Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin

    2011-01-01

    output power achieved by spectral beam combining of two single element tapered diode lasers. Since spectral beam combining does not affect beam propagation parameters, M2-values of 1.8 (fast axis) and 3.3 (slow axis) match the M2- values of the laser with lowest spatial coherence. The principle......Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as 93.7% is achieved, resulting in a single beam with high spatial coherence. The result represents the highest...... of spectral beam combining used in our experiments can be expanded to combine more than two tapered diode lasers and hence it is expected that the output power may be increased even further in the future....

  10. 16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers.

    Science.gov (United States)

    Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

    2011-01-17

    Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as 93.7% is achieved, resulting in a single beam with high spatial coherence. The result represents the highest output power achieved by spectral beam combining of two single element tapered diode lasers. Since spectral beam combining does not affect beam propagation parameters, M2-values of 1.8 (fast axis) and 3.3 (slow axis) match the M2-values of the laser with lowest spatial coherence. The principle of spectral beam combining used in our experiments can be expanded to combine more than two tapered diode lasers and hence it is expected that the output power may be increased even further in the future.

  11. Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

    Science.gov (United States)

    An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

    2015-03-01

    We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

  12. Nanoscale coatings for erosion and corrosion protection of copper microchannel coolers for high powered laser diodes

    Science.gov (United States)

    Flannery, Matthew; Fan, Angie; Desai, Tapan G.

    2014-03-01

    High powered laser diodes are used in a wide variety of applications ranging from telecommunications to industrial applications. Copper microchannel coolers (MCCs) utilizing high velocity, de-ionized water coolant are used to maintain diode temperatures in the recommended range to produce stable optical power output and control output wavelength. However, aggressive erosion and corrosion attack from the coolant limits the lifetime of the cooler to only 6 months of operation. Currently, gold plating is the industry standard for corrosion and erosion protection in MCCs. However, this technique cannot perform a pin-hole free coating and furthermore cannot uniformly cover the complex geometries of current MCCs involving small diameter primary and secondary channels. Advanced Cooling Technologies, Inc., presents a corrosion and erosion resistant coating (ANCERTM) applied by a vapor phase deposition process for enhanced protection of MCCs. To optimize the coating formation and thickness, coated copper samples were tested in 0.125% NaCl solution and high purity de-ionized (DIW) flow loop. The effects of DIW flow rates and qualities on erosion and corrosion of the ANCERTM coated samples were evaluated in long-term erosion and corrosion testing. The robustness of the coating was also evaluated in thermal cycles between 30°C - 75°C. After 1000 hours flow testing and 30 thermal cycles, the ANCERTM coated copper MCCs showed a corrosion rate 100 times lower than the gold plated ones and furthermore were barely affected by flow rates or temperatures thus demonstrating superior corrosion and erosion protection and long term reliability.

  13. Dimensional characteristics of welds performed on AISI 1045 steel by means of the application of high power diode laser

    International Nuclear Information System (INIS)

    Sanchez-Castillo, A.; Pou, J.; Lusquinos, F.; Quintero, F.; Soto, R.; Boutinguiza, M.; Saavedra, M.; Perez-Amor, M.

    2004-01-01

    The named High Power diode Laser (HPDL), emits a beam of optical energy generated by diode stimulation and offers the capability of supplying levels of power up to 6 kW. The objective of this research work was to study the main welding variables and their effects on dimensional characteristics of the beads performed by means of application of this novel laser. The results obtained, show that HPDL, is an energy source able to perform welds on AISI 1045 steel plates under conduction mode, without any kind of mechanized preparation, preheating or post-weld treatment and, without filler metal application. (Author) 16 refs

  14. Next generation 9xx/10xx nm high power laser diode bars for multi-kilowatt industrial applications

    Science.gov (United States)

    Commin, Paul; Todt, René; Krejci, Martin; Bättig, Rainer; Brunner, Reinhard; Lichtenstein, Norbert

    2013-02-01

    We report on the development of high power, 9xx-10xx nm laser diode bars for use in direct diode systems and for solidstate and fibre laser pumping with applications in industrial markets. For 1 cm wide bars on micro channel cooler (MCC) we have achieved a reliable output power of 250 W across the 900 nm - 1060 nm range. At this output power level we have achieved power conversion efficiencies of 65-66 % and 90 % power content slow axis beam divergence of ~6.5°. Results of a 6400 h life test show an average power degradation of 0.6 % per 1000 h at this operating power level. We will also show results of high power bars assembled on the new OCLARO conductive cooler, the BLM. This new cooler has a small footprint of 12.6 mm × 24.8 mm and is designed for lateral or vertical stacking of diodes in multi kilowatt systems but with the benefits associated with a conductive cooler. The thermal properties are shown to be the same as for a standard CS mount. 1 cm wide high fill factor bars and 0.5 cm wide low fill factor half bars assembled on the BLM operate at 63-64 % power conversion efficiency (PCE) with output powers of up to 250 W and 150 W, respectively.

  15. High-power quantum-dot superluminescent diodes with p-doped active region

    NARCIS (Netherlands)

    Rossetti, M.; Li, L.; Fiore, A.; Occhi, L.; Velez, C.; Mikhrin, S.; Kovsh, A.

    2006-01-01

    We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability

  16. Coupling of an applied field magnetically insulated ion diode to a high power magnetically insulated transmission line system

    International Nuclear Information System (INIS)

    Maenchen, J.E.

    1983-01-01

    The coupling of energy from a high power pulsed accelerator through a long triplate magnetically insulated transmission line (MITL) in vacuum to an annular applied magnetic field insulated extraction ion diode is examined. The narrow power transport window and the wave front erosion of the MITL set stringent impedance history conditions on the diode load. A new ion diode design developed to satisfy these criteria with marginal electron insulation is presented. The LION accelerator is used to provide a positive polarity 1.5 MV, 350 kA, 40 ns FWHM pulse with a 30 kA/ns current rate from a triplate MITL source. A transition converts the triplate into a cylindrical cross section which flares into the ion diode load. Extensive current and voltage measurements performed along this structure and on the extracted ion beam provide conclusive evidence that the self insulation condition of the MITL is maintained in the transition by current loss alone. The ion diode utilizes a radial magnetic field between a grounded cathode annular emission tip and a disk anode. A 50 cm 2 dielectric/metal anode area serves as the ion plasma source subject to direct electron bombardment from the opposing cathode tip under marginal magnetic insulation conditions. The ions extracted cross the radial magnetic field and exit the diode volume as an annular cross section beam of peak current about 100 kA. The diode current gradually converts from the initial electron flow to nearly 100% ion current after 30 ns, coupling 60% of the diode energy into ions

  17. High-performance ionic diode membrane for salinity gradient power generation.

    Science.gov (United States)

    Gao, Jun; Guo, Wei; Feng, Dan; Wang, Huanting; Zhao, Dongyuan; Jiang, Lei

    2014-09-03

    Salinity difference between seawater and river water is a sustainable energy resource that catches eyes of the public and the investors in the background of energy crisis. To capture this energy, interdisciplinary efforts from chemistry, materials science, environmental science, and nanotechnology have been made to create efficient and economically viable energy conversion methods and materials. Beyond conventional membrane-based processes, technological breakthroughs in harvesting salinity gradient power from natural waters are expected to emerge from the novel fluidic transport phenomena on the nanoscale. A major challenge toward real-world applications is to extrapolate existing single-channel devices to macroscopic materials. Here, we report a membrane-scale nanofluidic device with asymmetric structure, chemical composition, and surface charge polarity, termed ionic diode membrane (IDM), for harvesting electric power from salinity gradient. The IDM comprises heterojunctions between mesoporous carbon (pore size ∼7 nm, negatively charged) and macroporous alumina (pore size ∼80 nm, positively charged). The meso-/macroporous membrane rectifies the ionic current with distinctly high ratio of ca. 450 and keeps on rectifying in high-concentration electrolytes, even in saturated solution. The selective and rectified ion transport furthermore sheds light on salinity-gradient power generation. By mixing artificial seawater and river water through the IDM, substantially high power density of up to 3.46 W/m(2) is discovered, which largely outperforms some commercial ion-exchange membranes. A theoretical model based on coupled Poisson and Nernst-Planck equations is established to quantitatively explain the experimental observations and get insights into the underlying mechanism. The macroscopic and asymmetric nanofluidic structure anticipates wide potentials for sustainable power generation, water purification, and desalination.

  18. Wavelength switchable high-power diode-side-pumped rod Tm:YAG Laser around 2µm.

    Science.gov (United States)

    Wang, Caili; Du, Shifeng; Niu, Yanxiong; Wang, Zhichao; Zhang, Chao; Bian, Qi; Guo, Chuan; Xu, Jialin; Bo, Yong; Peng, Qinjun; Cui, Dafu; Zhang, Jingyuan; Lei, Wenqiang; Xu, Zuyan

    2013-03-25

    We report a high-power diode-side-pumped rod Tm:YAG laser operated at either 2.07 or 2.02 µm depending on the transmission of pumped output coupler. The laser yields 115W of continuous-wave output power at 2.07 µm with 5% output coupling, which is the highest output power for all solid-state 2.07 μm cw rod Tm:YAG laser reported so far. With an output coupler of 10% transmission, the center wavelength of the laser is switched to 2.02 μm with an output power of 77.1 W. This is the first observation of high-power wavelength switchable diode-side-pumped rod Tm:YAG laser around 2 µm.

  19. Thermal imaging of high power diode lasers subject to back-irradiance

    Science.gov (United States)

    Li, C.; Pipe, K. P.; Cao, C.; Thiagarajan, P.; Deri, R. J.; Leisher, P. O.

    2018-03-01

    CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.

  20. High-power diode laser bars as pump sources for fiber lasers and amplifiers (Invited Paper)

    Science.gov (United States)

    Bonati, G.; Hennig, P.; Wolff, D.; Voelckel, H.; Gabler, T.; Krause, U.; T'nnermann, A.; Reich, M.; Limpert, J.; Werner, E.; Liem, A.

    2005-04-01

    Fiber lasers are pumped by fibercoupled, multimode single chip devices at 915nm. That"s what everybody assumes when asked for the type of fiber laser pumps and it was like this for many years. Coming up as an amplifier for telecom applications, the amount of pump power needed was in the range of several watts. Highest pump powers for a limited market entered the ten watts range. This is a range of power that can be covered by highly reliable multimode chips, that have to survive up to 25 years, e.g. in submarine applications. With fiber lasers entering the power range and the application fields of rod and thin disc lasers, the amount of pump power needed raised into the area of several hundred watts. In this area of pump power, usually bar based pumps are used. This is due to the much higher cost pressure of the industrial customers compared to telecom customers. We expect more then 70% of all industrial systems to be pumped by diode laser bars. Predictions that bar based pumps survive for just a thousand hours in cw-operation and fractions of this if pulsed are wrong. Bar based pumps have to perform on full power for 10.000h on Micro channel heat sinks and 20.000h on passive heatsinks in industrial applications, and they do. We will show a variety of data, "real" long time tests and statistics from the JENOPTIK Laserdiode as well as data of thousands of bars in the field, showing that bar based pumps are not just well suitable for industrial applications on high power levels, but even showing benefits compared to chip based pumps. And it"s reasonable, that the same objectives of cost effectiveness, power and lifetime apply as well to thin disc, rod and slab lasers as to fiber lasers. Due to the pumping of fiber lasers, examples will be shown, how to utilize bars for high brightness fiber coupling. In this area, the automation is on its way to reduce the costs on the fibercoupling, similar to what had been done in the single chip business. All these efforts are

  1. Wavelength stabilized high pulse power laser diodes for automotive LiDAR

    Science.gov (United States)

    Knigge, A.; Klehr, A.; Wenzel, H.; Zeghuzi, A.; Fricke, J.; Maaßdorf, A.; Liero, A.; Tränkle, G.

    2018-03-01

    Diode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components of systems for free-space communication, metrology, material processing, spectroscopy, and light detection and ranging (LiDAR) as needed for object detection and autonomous driving. Automotive LiDAR systems demand additionally a good beam quality and low wavelength shift with temperature due to the wide operating temperature span. We present here internally wavelength stabilized lasers emitting ns optical pulses from an emission aperture between 30 μm and 100 μm with peak powers of tens of Watts at wavelengths around 905 nm. The vertical structure based on AlGaAs (confinement and cladding layers) and InGaAs (active quantum well) is especially optimized for pulsed operation with respect to the implementation of a surface Bragg grating with a high reflectivity. The fabricated 6 mm long distributed Bragg reflector (DBR) broad area (BA) lasers are electrically driven by an in-house developed high-speed unit generating 3 to 10 ns long nearly rectangular shaped current pulses with amplitudes of up to 250 A. Such lasers emit optical pulses with a peak power of more than 30 W at 95 A pulse current up to a temperature of 85°C with a wavelength shift as low as 65 pm/K and a lateral beam propagation factor less than 10. The influence of the lateral aperture width and the pulse length on the beam quality will be shown. A monolithic integration of 3 DBR BA lasers on a single chip whose emission can be combined into a single beam raises the output power to more than 100 W.

  2. Reliable high-power diode lasers: thermo-mechanical fatigue aspects

    Science.gov (United States)

    Klumel, Genady; Gridish, Yaakov; Szafranek, Igor; Karni, Yoram

    2006-02-01

    High power water-cooled diode lasers are finding increasing demand in biomedical, cosmetic and industrial applications, where repetitive cw (continuous wave) and pulsed cw operation modes are required. When operating in such modes, the lasers experience numerous complete thermal cycles between "cold" heat sink temperature and the "hot" temperature typical of thermally equilibrated cw operation. It is clearly demonstrated that the main failure mechanism directly linked to repetitive cw operation is thermo-mechanical fatigue of the solder joints adjacent to the laser bars, especially when "soft" solders are used. Analyses of the bonding interfaces were carried out using scanning electron microscopy. It was observed that intermetallic compounds, formed already during the bonding process, lead to the solders fatigue both on the p- and n-side of the laser bar. Fatigue failure of solder joints in repetitive cw operation reduces useful lifetime of the stacks to hundreds hours, in comparison with more than 10,000 hours lifetime typically demonstrated in commonly adopted non-stop cw reliability testing programs. It is shown, that proper selection of package materials and solders, careful design of fatigue sensitive parts and burn-in screening in the hard pulse operation mode allow considerable increase of lifetime and reliability, without compromising the device efficiency, optical power density and compactness.

  3. Geometry modeling of single track cladding deposited by high power diode laser with rectangular beam spot

    Science.gov (United States)

    Liu, Huaming; Qin, Xunpeng; Huang, Song; Hu, Zeqi; Ni, Mao

    2018-01-01

    This paper presents an investigation on the relationship between the process parameters and geometrical characteristics of the sectional profile for the single track cladding (STC) deposited by High Power Diode Laser (HPDL) with rectangle beam spot (RBS). To obtain the geometry parameters, namely cladding width Wc and height Hc of the sectional profile, a full factorial design (FFD) of experiment was used to conduct the experiments with a total of 27. The pre-placed powder technique has been employed during laser cladding. The influence of the process parameters including laser power, powder thickness and scanning speed on the Wc and Hc was analyzed in detail. A nonlinear fitting model was used to fit the relationship between the process parameters and geometry parameters. And a circular arc was adopted to describe the geometry profile of the cross-section of STC. The above models were confirmed by all the experiments. The results indicated that the geometrical characteristics of the sectional profile of STC can be described as the circular arc, and the other geometry parameters of the sectional profile can be calculated only using Wc and Hc. Meanwhile, the Wc and Hc can be predicted through the process parameters.

  4. Experimental and theoretical analysis of the dominant lateral waveguiding mechanism in 975 nm high power broad area diode lasers

    International Nuclear Information System (INIS)

    Crump, P; Böldicke, S; Schultz, C M; Ekhteraei, H; Wenzel, H; Erbert, G

    2012-01-01

    For maximum fibre-coupled power, high power broad area diode lasers must operate with small lateral far field angles at high continuous wave (CW) powers. However, these structures are laterally multi-moded, with low beam quality and wide emission angles. In order to experimentally determine the origin of the low beam quality, spectrally resolved near and far field measurements were performed for a diode laser with 50 µm stripe width. Within the range measured (CW optical output powers to 1.5 W) the laser is shown to operate in just six stable lateral modes, with spatially periodic profiles. Comparisons of the measured profiles with the results of two-dimensional modal simulation demonstrate that current-induced thermal lensing dominates the lateral waveguiding, in spite of the presence of both strong built-in index guiding and gain guiding. No evidence is seen for filamentation. Building on the diagnosis, proposals are presented for improvements to beam quality. (paper)

  5. Solution-Processed Phosphorescent Organic Light-Emitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency

    OpenAIRE

    Wang, Shumeng; Wang, Xingdong; Yao, Bing; Zhang, Baohua; Ding, Junqiao; Xie, Zhiyuan; Wang, Lixiang

    2015-01-01

    To realize power efficient solution-processed phosphorescent organic light-emitting diodes (s-PhOLEDs), the corresponding high driving voltage issue should be well solved. To solve it, efforts have been devoted to the exploitation of novel host or interfacial materials. However, the issues of charge trapping of phosphor and/or charge injection barrier are still serious, largely restraining the power efficiency (PE) levels. Herein, with the utilization of an exciplex-forming couple 4, 4?, 4? -...

  6. Study on the near-field non-linearity (SMILE) of high power diode laser arrays

    Science.gov (United States)

    Zhang, Hongyou; Jia, Yangtao; Li, Changxuan; Zah, Chung-en; Liu, Xingsheng

    2018-02-01

    High power laser diodes have been found a wide range of industrial, space, medical applications, characterized by high conversion efficiency, small size, light weight and a long lifetime. However, due to thermal induced stress, each emitter in a semiconductor laser bar or array is displaced along p-n junction, resulting of each emitter is not in a line, called Near-field Non-linearity. Near-field Non-linearity along laser bar (also known as "SMILE") determines the outcome of optical coupling and beam shaping [1]. The SMILE of a laser array is the main obstacle to obtain good optical coupling efficiency and beam shaping from a laser array. Larger SMILE value causes a larger divergence angle and a wider line after collimation and focusing, respectively. In this letter, we simulate two different package structures based on MCC (Micro Channel Cooler) with Indium and AuSn solders, including the distribution of normal stress and the SMILE value. According to the theoretical results, we found the distribution of normal stress on laser bar shows the largest in the middle and drops rapidly near both ends. At last, we did another experiment to prove that the SMILE value of a laser bar was mainly affected by the die bonding process, rather than the operating condition.

  7. Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

    Science.gov (United States)

    Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

    2018-02-01

    The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications 96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

  8. Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

    International Nuclear Information System (INIS)

    Onufriyev, Valery V.

    2001-01-01

    It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient--γ i with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure p cs ) and cathode temperature T k is constant too (U b =constant with T k =constant and p cs =constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-p cs and cathode temperature-T k and is independent on IEG length--Δ ieg . On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly--the region of excited atoms--''Aston glow.''

  9. Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

    Science.gov (United States)

    Onufriyev, Valery. V.

    2001-02-01

    It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

  10. High-power diode-side-pumped rod Tm:YAG laser at 2.07 μm.

    Science.gov (United States)

    Wang, Caili; Niu, Yanxiong; Du, Shifeng; Zhang, Chao; Wang, Zhichao; Li, Fangqin; Xu, Jialin; Bo, Yong; Peng, Qinjun; Cui, Dafu; Zhang, Jingyuan; Xu, Zuyan

    2013-11-01

    We report a high-power diode-laser (LD) side-pumped rod Tm:YAG laser of around 2 μm. The laser was water-cooled at 8°C and yielded a maximum output power of 267 W at 2.07 μm, which is the highest output power for an all solid-state cw 2.07 μm rod Tm:YAG laser reported as far as we know. The corresponding optical-optical conversion efficiency was 20.7%, and the slope efficiency was about 29.8%, respectively.

  11. High-power and highly efficient diode-cladding-pumped holmium-doped fluoride fiber laser operating at 2.94 microm.

    Science.gov (United States)

    Jackson, Stuart D

    2009-08-01

    A high-power diode-cladding-pumped Ho(3+), Pr(3+)-doped fluoride glass fiber laser is demonstrated. The laser produced a maximum output power of 2.5 W at a slope efficiency of 32% using diode lasers emitting at 1,150 nm. The long-emission wavelength of 2.94 microm measured at maximum pump power, which is particularly suited to medical applications, indicates that tailoring of the proportion of Pr(3+) ions can provide specific emission wavelengths while providing sufficient de-excitation of the lower laser level.

  12. 650-nm-band high-power and highly reliable laser diodes with a window-mirror structure

    Science.gov (United States)

    Shima, Akihiro; Hironaka, Misao; Ono, Ken-ichi; Takemi, Masayoshi; Sakamoto, Yoshifumi; Kunitsugu, Yasuhiro; Yamashita, Koji

    1998-05-01

    An active layer structure with 658 nm-emission at 25 degrees Celsius has been optimized in order to reduce the operating current of the laser diodes (LD) under high temperature condition. For improvement of the maximum output power and the reliability limited by mirror degradation, we have applied a zinc-diffused-type window-mirror structure which prevents the optical absorption at the mirror facet. As a result, the CW output power of 50 mW is obtained even at 80 degrees Celsius for a 650 micrometer-long window-mirror LD. In addition, the maximum light output power over 150 mW at 25 degrees Celsius has been realized without any optical mirror damage. In the aging tests, the LDs have been operating for over 2,500 - 5,000 hours under the CW condition of 30 - 50 mW at 60 degrees Celsius. The window-mirror structure also enables reliable 60 degree Celsius, 30 mW, CW operation of the LDs with 651 nm- emission at 25 degrees Celsius. Moreover, the maximum output power of around 100 mW even at 80 degrees Celsius and reliable 2,000-hour operation at 60 degrees Celsius, 70 mW have been realized for the first time by 659 nm LDs with a long cavity length of 900 micrometers.

  13. Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

    International Nuclear Information System (INIS)

    Winterfeldt, M.; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

    2014-01-01

    GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPP lat ) at high power. An experimental study of the factors limiting BPP lat is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPP lat is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPP lat , whose influence on total BPP lat remains small, provided the overall polarization purity is >95%

  14. Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

    Science.gov (United States)

    Winterfeldt, M.; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

    2014-08-01

    GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPPlat) at high power. An experimental study of the factors limiting BPPlat is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPPlat is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPPlat, whose influence on total BPPlat remains small, provided the overall polarization purity is >95%.

  15. Efficient generation of 3.5W laser light at 515nm by frequency doubling a single-frequency high power DBR tapered diode laser

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Müller, André

    2017-01-01

    More than 3.5 W of green light at 515 nm is generated by frequency doubling a single-frequency high power DBR tapered diode laser. The frequency doubling is performed in a cascade of PPMgLN and PPMgSLT crystals in order to reach high power and avoid thermal effects present in PPMgLN at high power...

  16. High-power dual-wavelength external-Cavity diode laser based on tapered amplifier with tunable terahertz frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2011-01-01

    Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5:0 THz......, this is the highest output power from a dual-wavelength diode laser system operating with tunable terahertz frequency difference. © 2011 Optical Society of America....

  17. Novel packaging for CW and QCW diode laser modules for operation with high power and duty cycles

    Science.gov (United States)

    Fassbender, Wilhelm; Lotz, Jens; Kissel, Heiko; Biesenbach, Jens

    2018-02-01

    Continuous wave (CW) and quasi-continuous wave (QCW) operated diode laser bars and arrays have found a wide range of industrial, medical, scientific, military and space applications with a broad variety in wavelength, pulse energy, pulse duration and beam quality. Recent applications require even higher power, duty cycles and power density. The heat loss will be dissipated by conductive cooling or liquid cooling close to the bars. We present the latest performance and reliability data of two novel high-brightness CW and QCW arrays of customized and mass-production modules, in compact and robust industry design for operation with high power and high duty cycles. All designs are based on single diode packages consisting of 10mm laser bars, soft or hard soldered between expansion matched submounts. The modular components cover a wide span of designs which differ basically in water/conduction (active/passive) cooled, single, linear (horizontal and vertical) arranged designs, as well as housed and unhoused modules. The different assembling technologies of active and passive cooled base plates affect the heat dissipation and therefore the reachable power at different QCW operating conditions, as well as the lifetime. As an example, a package consisting of 8 laser diodes, connected to a 28.8*13.5*7.0mm3 DCB (direct copper bonded) submount, passively or actively cooled is considered. This design is of particular interest for mobile applications seamless module to module building system, with an infinite number of laser bars at 1.7mm pitch. Using 940nm bars we can reach an optical output power per bar of 450W at 25°C base plate temperature with 10Hz, 1.2% duty cycle and 1.2ms pulse duration. As an additional example, micro channel coolers can be vertically stacked up to 50 diodes with a 1,15mm pitch. This design is suitable for all applications, demanding also compactness and light weight and high power density. Using near infrared bars and others, we can reach an optical

  18. Note: An online testing method for lifetime projection of high power light-emitting diode under accelerated reliability test.

    Science.gov (United States)

    Chen, Qi; Chen, Quan; Luo, Xiaobing

    2014-09-01

    In recent years, due to the fast development of high power light-emitting diode (LED), its lifetime prediction and assessment have become a crucial issue. Although the in situ measurement has been widely used for reliability testing in laser diode community, it has not been applied commonly in LED community. In this paper, an online testing method for LED life projection under accelerated reliability test was proposed and the prototype was built. The optical parametric data were collected. The systematic error and the measuring uncertainty were calculated to be within 0.2% and within 2%, respectively. With this online testing method, experimental data can be acquired continuously and sufficient amount of data can be gathered. Thus, the projection fitting accuracy can be improved (r(2) = 0.954) and testing duration can be shortened.

  19. Experimental studies for improvement of thermal effects in a high-power fiber-coupled diode laser module operating at 808 nm

    Science.gov (United States)

    El-Sherif, Ashraf F.; Hussein, Khalid; Hassan, Mahmoud F.; Talat, Mahmoud M.

    2012-03-01

    High power diode laser module operating at 808 nm is required for different applications, such as developing an efficient high power Nd3+-doped solid state laser and Tm3+ -doped silica fiber laser, industrial, medical and military applications. Optical and thermal images characterization for a fiber-coupled high power diode laser module is presented experimentally for 6.6 Watt output optical power .An external temperature controller system was designed, which stabilizes the central wavelength at 808 nm at 25°C over a wide range of diode laser driving current from 1A to 6 A. without this cooling system, the wavelength changes by 0.35nm/°C for temperature changes from 20°C to 40°C at the same range of the driving current. In this paper we have present a methodology for temperature reduction of a 808 nm high power diode laser module, based on dynamically thermal control, which is known as dynamic thermal management. Stabilization of the output wavelength has been done by using proportional speed control (PSC) of a CPU cooling fan with certain scheme of straight fins heat sink. Two electronic circuits based on pulse width modulation (PWM) in microcontroller and comparators IC have been used. This technique can be considered as an effective mechanism for reducing temperature and power dissipation to make stabilization of the diode laser output wavelength by preventing heat accumulation from the thermo electric cooling (TEC) inside the diode laser module confirmed by thermal images.

  20. Automated alignment of optical components for high-power diode lasers

    Science.gov (United States)

    Brecher, C.; Pyschny, N.; Haag, S.; Guerrero Lule, V.

    2012-03-01

    Despite major progress in developing brilliant laser sources a huge potential for cost reductions can be found in simpler setups and automated assembly processes, especially for large volume applications. In this presentation, a concept for flexible automation in optics assembly is presented which is based on standard micro assembly systems with relatively large workspace and modular micromanipulators to enhance the system with additional degrees of freedom and a very high motion resolution. The core component is a compact flexure-based micromanipulator especially designed for the alignment of micro optical components which will be described in detail. The manipulator has been applied in different scenarios to develop and investigate automated alignment processes. This paper focuses on the automated alignment of fast axis collimation (FAC) lenses which is a crucial step during the production of diode lasers. The handling and positioning system, the measuring arrangement for process feedback during active alignment as well as the alignment strategy will be described. The fine alignment of the FAC lens is performed with the micromanipulator under concurrent analysis of the far and the near field intensity distribution. An optimization of the image processing chains for the alignment of a FAC in front of a diode bar led to cycle times of less than 30 seconds. An outlook on other applications and future work regarding the development of automated assembly processes as well as new ideas for flexible assembly systems with desktop robots will close the talk.

  1. Adjustable mounting device for high-volume production of beam-shaping systems for high-power diode lasers

    Science.gov (United States)

    Haag, Sebastian; Bernhardt, Henning; Rübenach, Olaf; Haverkamp, Tobias; Müller, Tobias; Zontar, Daniel; Brecher, Christian

    2015-02-01

    In many applications for high-power diode lasers, the production of beam-shaping and homogenizing optical systems experience rising volumes and dynamical market demands. The automation of assembly processes on flexible and reconfigurable machines can contribute to a more responsive and scalable production. The paper presents a flexible mounting device designed for the challenging assembly of side-tab based optical systems. It provides design elements for precisely referencing and fixating two optical elements in a well-defined geometric relation. Side tabs are presented to the machine allowing the application of glue and a rotating mechanism allows the attachment to the optical elements. The device can be adjusted to fit different form factors and it can be used in high-volume assembly machines. The paper shows the utilization of the device for a collimation module consisting of a fast-axis and a slow-axis collimation lens. Results regarding the repeatability and process capability of bonding side tab assemblies as well as estimates from 3D simulation for overall performance indicators achieved such as cycle time and throughput will be discussed.

  2. Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

    Energy Technology Data Exchange (ETDEWEB)

    Winterfeldt, M., E-mail: martin.winterfeldt@fbh-berlin.de; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2014-08-14

    GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPP{sub lat}) at high power. An experimental study of the factors limiting BPP{sub lat} is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPP{sub lat} is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPP{sub lat}, whose influence on total BPP{sub lat} remains small, provided the overall polarization purity is >95%.

  3. A Single-Stage High-Power-Factor Light-Emitting Diode (LED Driver with Coupled Inductors for Streetlight Applications

    Directory of Open Access Journals (Sweden)

    Chun-An Cheng

    2017-02-01

    Full Text Available This paper presents and implements a single-stage high-power-factor light-emitting diode (LED driver with coupled inductors, suitable for streetlight applications. The presented LED driver integrates an interleaved buck-boost power factor correction (PFC converter with coupled inductors and a half-bridge-type series-resonant converter cascaded with a full-bridge rectifier into a single-stage power conversion circuit. Coupled inductors inside the interleaved buck-boost PFC converter sub-circuit are designed to operate in discontinuous conduction mode (DCM for achieving input-current shaping, and the half-bridge-type series resonant converter cascaded with a full-bridge rectifier is designed for obtaining zero-voltage switching (ZVS on two power switches to reduce their switching losses. Analysis of operational modes and design equations for the presented LED driver are described and included. In addition, the presented driver features a high power factor, low total harmonic distortion (THD of input current, and soft switching. Finally, a prototype driver is developed and implemented to supply a 165-W-rated LED streetlight module with utility-line input voltages ranging from 210 to 230 V. Experimental results demonstrate that high power factor (>0.99, low utility-line current THD (<7%, low-output voltage ripples (<1%, low-output current ripples (<10%, and high circuit efficiency (>90% are obtained in the presented single-stage driver for LED streetlight applications.

  4. An analysis of transient thermal properties for high power GaN-based laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae Min; Kim, Seungtaek; Kang, Sung Bok; Kim, Young Jin; Jeong, Hoon; Lee, Kyeongkyun; Kim, Jongseok [Korea Institute of Industrial Technology, 35-3 Hongcheon-Ri, Ipjang-Myeon, Cheonan, Chungnam 331-825 (Korea); Lee, Sangdon; Suh, Dongsik [QSI Co., Ltd., 315-9 Cheonheung-Ri, Sungger-Eup, Cheonan, Chungnam 330-836 (Korea); Yi, Jeong Hoon; Choi, Yoonho; Jung, Seok Gu; Noh, Minsoo [LG Electronics Advanced Research Institute, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724 (Korea)

    2010-07-15

    Thermal properties of 405 nm GaN-based laser diodes were investigated by employing a transient heating response method based on the temperature dependence of diode forward voltage. Thermal resistances of materials consisting of packaged laser diodes were differentiated in transient thermal response curves at a current below threshold current. With a current above threshold current, no significant change in thermal resistances and difference between junction-up and junction-down laser diodes was observed at pulses shorter than 3 sec. From an analysis with long current injections, thermal resistance of a packaged laser diode with a junction-up bonding was {proportional_to}45 C/W which was higher than that of a junction-down bonded laser diode by {proportional_to}10 C/W. Further analyses based on parameters obtained from voltage recovery curves indicated that the time constant for cooling is directly related to the thermal resistance and thermal capacitance of a laser diode package. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Development and fabrication of a high current, fast recovery power diode

    Science.gov (United States)

    Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.

    1983-01-01

    A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

  6. Ultrasensitive, real-time trace gas detection using a high-power, multimode diode laser and cavity ringdown spectroscopy.

    Science.gov (United States)

    Karpf, Andreas; Qiao, Yuhao; Rao, Gottipaty N

    2016-06-01

    We present a simplified cavity ringdown (CRD) trace gas detection technique that is insensitive to vibration, and capable of extremely sensitive, real-time absorption measurements. A high-power, multimode Fabry-Perot (FP) diode laser with a broad wavelength range (Δλlaser∼0.6  nm) is used to excite a large number of cavity modes, thereby reducing the detector's susceptibility to vibration and making it well suited for field deployment. When detecting molecular species with broad absorption features (Δλabsorption≫Δλlaser), the laser's broad linewidth removes the need for precision wavelength stabilization. The laser's power and broad linewidth allow the use of on-axis cavity alignment, improving the signal-to-noise ratio while maintaining its vibration insensitivity. The use of an FP diode laser has the added advantages of being inexpensive, compact, and insensitive to vibration. The technique was demonstrated using a 1.1 W (λ=400  nm) diode laser to measure low concentrations of nitrogen dioxide (NO2) in zero air. A sensitivity of 38 parts in 1012 (ppt) was achieved using an integration time of 128 ms; for single-shot detection, 530 ppt sensitivity was demonstrated with a measurement time of 60 μs, which opens the door to sensitive measurements with extremely high temporal resolution; to the best of our knowledge, these are the highest speed measurements of NO2 concentration using CRD spectroscopy. The reduced susceptibility to vibration was demonstrated by introducing small vibrations into the apparatus and observing that there was no measurable effect on the sensitivity of detection.

  7. Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2012-01-01

    knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

  8. Parametric Study and Multi-Criteria Optimization in Laser Cladding by a High Power Direct Diode Laser

    Science.gov (United States)

    Farahmand, Parisa; Kovacevic, Radovan

    2014-12-01

    In laser cladding, the performance of the deposited layers subjected to severe working conditions (e.g., wear and high temperature conditions) depends on the mechanical properties, the metallurgical bond to the substrate, and the percentage of dilution. The clad geometry and mechanical characteristics of the deposited layer are influenced greatly by the type of laser used as a heat source and process parameters used. Nowadays, the quality of fabricated coating by laser cladding and the efficiency of this process has improved thanks to the development of high-power diode lasers, with power up to 10 kW. In this study, the laser cladding by a high power direct diode laser (HPDDL) as a new heat source in laser cladding was investigated in detail. The high alloy tool steel material (AISI H13) as feedstock was deposited on mild steel (ASTM A36) by a HPDDL up to 8kW laser and with new design lateral feeding nozzle. The influences of the main process parameters (laser power, powder flow rate, and scanning speed) on the clad-bead geometry (specifically layer height and depth of the heat affected zone), and clad microhardness were studied. Multiple regression analysis was used to develop the analytical models for desired output properties according to input process parameters. The Analysis of Variance was applied to check the accuracy of the developed models. The response surface methodology (RSM) and desirability function were used for multi-criteria optimization of the cladding process. In order to investigate the effect of process parameters on the molten pool evolution, in-situ monitoring was utilized. Finally, the validation results for optimized process conditions show the predicted results were in a good agreement with measured values. The multi-criteria optimization makes it possible to acquire an efficient process for a combination of clad geometrical and mechanical characteristics control.

  9. A simple approximation for the current-voltage characteristics of high-power, relativistic diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ekdahl, Carl, E-mail: cekdahl@lanl.gov [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2016-06-15

    A simple approximation for the current-voltage characteristics of a relativistic electron diode is presented. The approximation is accurate from non-relativistic through relativistic electron energies. Although it is empirically developed, it has many of the fundamental properties of the exact diode solutions. The approximation is simple enough to be remembered and worked on almost any pocket calculator, so it has proven to be quite useful on the laboratory floor.

  10. Strong doping of the n-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

    Science.gov (United States)

    Ryvkin, Boris S.; Avrutin, Eugene A.; Kostamovaara, Juha T.

    2017-12-01

    An analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the direct TPA effect. The resulting losses are compared with those in an identical structure with a weakly doped waveguide, and shown to be substantially lower, resulting in a significant improvement in the output power and efficiency in the structure with a strongly doped waveguide.

  11. Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

    Science.gov (United States)

    Been, J. F.

    1973-01-01

    The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

  12. High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

    Science.gov (United States)

    Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

    2017-07-01

    High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

  13. Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Shu; Ohta, Makoto; Yabuki, Yoshifumi; Hoshina, Yukio; Hashizu, Toshihiro; Ikeda, Masao [Development Center, Sony Shiroishi Semiconductor, Inc., 3-53-2 Shiratori, Shiroishi, Miyagi, 989-0734 (Japan); Naganuma, Kaori; Tamamura, Koshi [Core Technology Development Group, Micro Systems Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi Kanagawa, 243-0041 (Japan)

    2003-11-01

    AlGaInN-based blue-violet laser diodes with a single broad-area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were examined; 10, 50, and 100 {mu}m, and the maximum light output power of 0.94 W under cw operation at 20 C was achieved for the sample with a stripe width of 10 {mu}m. A super high-power laser diode array was fabricated using 11 of these high-performance laser chips, with a resultant output power of 6.1 W under cw operation at 20 C. This result represents the highest reported output power for blue-violet laser diodes. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Optical design and development of a fiber coupled high-power diode laser system for laser transmission welding of plastics

    Science.gov (United States)

    Rodríguez-Vidal, Eva; Quintana, Iban; Etxarri, Jon; Azkorbebeitia, Urko; Otaduy, Deitze; González, Francisco; Moreno, Fernando

    2012-12-01

    Laser transmission welding (LTW) of thermoplastics is a direct bonding technique already used in different industrial applications sectors such as automobiles, microfluidics, electronics, and biomedicine. LTW evolves localized heating at the interface of two pieces of plastic to be joined. One of the plastic pieces needs to be optically transparent to the laser radiation whereas the other part has to be absorbent, being that the radiation produced by high power diode lasers is a good alternative for this process. As consequence, a tailored laser system has been designed and developed to obtain high quality weld seams with weld widths between 0.7 and 1.4 mm. The developed laser system consists of two diode laser bars (50 W per bar) coupled into an optical fiber using a nonimaging solution: equalization of the beam parameter product (BPP) in the slow and fast axes by a pair of step-mirrors. The power scaling was carried out by means of a multiplexing polarization technique. The analysis of energy balance and beam quality was performed considering ray tracing simulation (ZEMAX) and experimental validation. The welding experiments were conducted on acrylonitrile/butadiene/styrene (ABS), a thermoplastic frequently used in automotive, electronics and aircraft applications, doped with two different concentrations of carbon nanotubes (0.01% and 0.05% CNTs). Quality of the weld seams on ABS was analyzed in terms of the process parameters (welding speed, laser power and clamping pressure) by visual and optical microscope inspections. Mechanical properties of weld seams were analyzed by mechanical shear tests. High quality weld seams were produced in ABS, revealing the potential of the laser developed in this work for a wide range of plastic welding applications.

  15. Effect of thermal processes on critical operation conditions of high-power laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Parashchuk, V V [Institute of Physics, Belarus Academy of Sciences, Minsk (Belarus); Vu Doan Mien [Institute of Materials Science, Vietnamese Academy of Science and Technology, Hanoi (Viet Nam)

    2013-10-31

    Using numerical and analytical techniques in a threedimensional approximation, we have modelled the effect of spatial thermoelastic stress nonuniformity in a laser diode – heat sink system on the output characteristics of the device in different operation modes. We have studied the influence of the pulse duration, the geometry of the laser system and its thermophysical parameters on the critical pump current density, in particular for state-of-the-art heat conductive substrate materials. The proposed approach has been used to optimise the laser diode assembly process in terms of the quality of laser crystal positioning (bonding) on a heat sink. (lasers)

  16. Expansion-matched passively cooled heatsinks with low thermal resistance for high-power diode laser bars

    Science.gov (United States)

    Leers, Michael; Scholz, Christian; Boucke, Konstantin; Poprawe, Reinhart

    2006-02-01

    The lifetime of high-power diode lasers, which are cooled by standard copper heatsinks, is limited. The reasons are the aging of the indium solder normally employed as well as the mechanical stress caused by the mismatch between the copper heatsink (16 - 17ppm/K) and the GaAs diode laser bars (6 - 7.5 ppm/K). For micro - channel heatsinks corrosion and erosion of the micro channels limit the lifetime additionally. The different thermal behavior and the resulting stress cannot be compensated totally by the solder. Expansion matched heatsink materials like tungsten-copper or aluminum nitride reduce this stress. A further possible solution is a combination of copper and molybdenum layers, but all these materials have a high thermal resistance in common. For high-power electronic or low cost medical applications novel materials like copper/carbon compound, compound diamond or high-conductivity ceramics were developed during recent years. Based on these novel materials, passively cooled heatsinks are designed, and thermal and mechanical simulations are performed to check their properties. The expansion of the heatsink and the induced mechanical stress between laser bar and heatsink are the main tasks for the simulations. A comparison of the simulation with experimental results for different material combinations illustrates the advantages and disadvantages of the different approaches. Together with the boundary conditions the ideal applications for packaging with these materials are defined. The goal of the development of passively-cooled expansion-matched heatsinks has to be a long-term reliability of several 10.000h and a thermal resistance below 1 K/W.

  17. High-power pulsed and CW diode-pumped mode-locked Nd:YAG lasers

    Science.gov (United States)

    Marshall, Larry R.; Hays, A. D.; Kaz, Alex; Kasinski, Jeff; Burnham, R. L.

    1991-01-01

    The operation of both pulsed and CW diode-pumped mode-locked Nd:YAG lasers are presented. The pulsed laser produced 1.0 mJ with pulsewidths of 90 psec at 20 Hz. The CW pumped laser produced 6 W output at 1.064 microns and 3 W output at 532 nm.

  18. Modelling of high-power diode-pumped erbium 3-µm fibre lasers

    NARCIS (Netherlands)

    Jackson, S.D.; King, T.A.; Pollnau, Markus

    2000-01-01

    We present theoretical calculations that relate to the cw operation of a high-power Er3+,Pr3+:ZBLAN double-clad fibre laser. Using the measured energy-transfer, energy-transfer-upconversion and cross-relaxation parameters relevant to Er3+-doped and Er3+,Pr3+-codoped ZBLAN, we compare the theoretical

  19. Recent progress of 638-nm high-power broad area laser diodes in Mitsubishi Electric

    Science.gov (United States)

    Kuramoto, Kyosuke; Abe, Shinji; Miyashita, Motoharu; Nishida, Takehiro; Yagi, Tetsuya

    2018-02-01

    Laser based displays have gathered much attention because only the displays can express full color gamut of Ultra-HDTV, ITU-R BT.2020. One of the displays uses the lasers under pulse such as a single spatial light modulator (SLM) projector, and the other does ones under CW such as a multiple SLM projector and a liquid crystal display. Both types require high-power lasers because brightness is the most important factor in the market. We developed two types of 638-nm multi-emitter high-power BA-LDs assembled on Φ9.0-TO, that is, triple emitter for pulse and dual emitter for CW. The triple emitter LD emitted exceeding 6.0 W peak power under 25°C, frequency of 120 Hz, and duty of 30%. At high temperature, 55°C, the peak power was approximately 2.9W. The dual emitter emitted exceeding 3.0W under 25°C, CW. It emitted up to 1.7 W at 55°C. WPE of the dual emitter reached 40.5% at Tc of 25°C, which is the world highest in 638-nm LD under CW to the best of our knowledge, although that of the triple emitter was 38.1%. Both LDs may be suitable for laser based display applications.

  20. The Multidisk Diode-Pumped High Power Yb:YAG Laser Amplifier of High-Intensity Laser System with 1 kHz Repetition Rate

    Science.gov (United States)

    Kuptsov, G. V.; Petrov, V. V.; Petrov, V. A.; Laptev, A. V.; Kirpichnikov, A. V.; Pestryakov, E. V.

    2018-04-01

    The source of instabilities in the multidisk diode-pumped high power Yb:YAG laser amplifier with cryogenic closed-loop cooling in the laser amplification channel of the high-intensity laser system with 1 kHz repetition rate was determined. Dissected copper mounts were designed and used to suppress instabilities and to achieve repeatability of the system. The equilibrium temperature dependency of the active elements on average power was measured. The seed laser for the multidisk amplifier was numerically simulated and designed to allow one to increase pulses output energy after the amplifier up to 500 mJ.

  1. High power diode-pumped continuous wave and Q-switch operation of Tm,Ho:YVO4 laser

    International Nuclear Information System (INIS)

    Yao, B Q; Li, G; Meng, P B; Zhu, G L; Ju, Y L; Wang, Y Z

    2010-01-01

    High power diode-pumped continuous wave (CW) and Q-switch operation of Tm,Ho:YVO 4 laser is reported. Using two Tm,Ho:YVO 4 rods in a single cavity, up to 20.2 W of CW output lasing at 2054.7 nm was obtained under cryogenic temperature of 77 K with an optical to optical conversion efficiency of 32.9%. For Q-switch operation, up to 19.4 W of output was obtained under 15 kHz pulse repetition frequency (PRF) with a minimum pulse width of 24.2 ns. In addition, different pulse repetition frequencies of Q-switch operation with 10.0 kHz, 12.5 kHz and 15.0 kHz were investigated comparatively

  2. Manipulation of the osteoblast response to a Ti 6Al 4V titanium alloy using a high power diode laser

    Science.gov (United States)

    Hao, L.; Lawrence, J.; Li, L.

    2005-07-01

    To improve the bone integration of titanium-based implants a high power diode laser (HPDL) was used to modify the material for improved osteoblast cell response. The surface properties of un-treated and HPDL treated samples were characterized. Contact angles for the un-treated and the HPDL modified titanium alloy (Ti-6Al-4V) were determined with selected biological liquids by the sessile drop technique. The analysis revealed that the wettability of the Ti-6Al-4V improved after HPDL laser treatment, indicating that better interaction with the biological liquids occurred. Moreover, an in vitro human fetal osteoblast cells (hFOB 1.19) evaluation revealed a more favourable cell response on the HPDL laser treated Ti-6Al-4V alloy than on either un-treated sample or a mechanically roughened sample. It was consequently determined that the HPDL provides more a controllable and effective technique to improve the biocompatibility of bio-metals.

  3. Uniform current density and divergence control in high power extraction ion diodes

    International Nuclear Information System (INIS)

    Desjarlais, M.P.; Coats, R.S.; Lockner, T.R.; Pointon, T.D.; Johnson, D.J.; Slutz, S.A.; Lemke, R.W.; Cuneo, M.E.; Mehlhorn, T.A.

    1996-01-01

    A theory of radial beam uniformity in extraction ion diodes is presented. The theory is based on a locally one-dimensional analysis of the diamagnetic compression of magnetic streamlines and the self-consistent determination of the virtual cathode location. The radial dependence of the applied magnetic field is used to determine the critical parameters of this locally one-dimensional treatment. The theory has been incorporated into the ATHETA magnetic field code to allow the rapid evaluation of realistic magnetic field configurations. Comparisons between the theoretical results, simulations with the QUICKSILVER code, and experiments on the PBFA-X accelerator establish the usefulness of this tool for tuning magnetic fields to improve ion beam uniformity. The consequences of poor beam uniformity on the evolution of ion diode instabilities are discussed with supporting evidence from simulations, theory, and experiments. (author). 8 figs., 15 refs

  4. Uniform current density and divergence control in high power extraction ion diodes

    International Nuclear Information System (INIS)

    Desjarlais, M.P.; Coats, R.S.; Lockner, T.R.; Pointon, T.D.; Johnson, D.J.; Slutz, S.A.; Lemke, R.W.; Cuneo, M.E.; Melhorn, T.A.

    1996-01-01

    A theory of radial beam uniformity in extraction ion diodes is presented. The theory is based on a locally one dimensional analysis of the diamagnetic compression of magnetic streamlines and the self consistent determination of the virtual cathode location. The radial dependence of the applied magnetic field is used to determine the critical parameters of this locally one dimensional treatment. The theory has been incorporated into the ATHETA magnetic field code to allow the rapid evaluation of realistic magnetic field configurations. Comparisons between the theoretical results, simulations with the QUICKSILVER code, and experiments on the PBFA-X accelerator establish the usefulness of this tool for tuning magnetic fields to improve ion beam uniformity. The consequences of poor beam uniformity on the evolution of ion diode instabilities are discussed with supporting evidence from simulations, theory, and experiments

  5. Uniform current density and divergence control in high power extraction ion diodes

    Energy Technology Data Exchange (ETDEWEB)

    Desjarlais, M P; Coats, R S; Lockner, T R; Pointon, T D; Johnson, D J; Slutz, S A; Lemke, R W; Cuneo, M E; Mehlhorn, T A [Sandia Labs., Albuquerque, NM (United States)

    1997-12-31

    A theory of radial beam uniformity in extraction ion diodes is presented. The theory is based on a locally one-dimensional analysis of the diamagnetic compression of magnetic streamlines and the self-consistent determination of the virtual cathode location. The radial dependence of the applied magnetic field is used to determine the critical parameters of this locally one-dimensional treatment. The theory has been incorporated into the ATHETA magnetic field code to allow the rapid evaluation of realistic magnetic field configurations. Comparisons between the theoretical results, simulations with the QUICKSILVER code, and experiments on the PBFA-X accelerator establish the usefulness of this tool for tuning magnetic fields to improve ion beam uniformity. The consequences of poor beam uniformity on the evolution of ion diode instabilities are discussed with supporting evidence from simulations, theory, and experiments. (author). 8 figs., 15 refs.

  6. Optical pumping of Rb by Ti:Sa laser and high-power laser diode

    Czech Academy of Sciences Publication Activity Database

    Buchta, Zdeněk; Rychnovský, Jan; Lazar, Josef

    2006-01-01

    Roč. 8, č. 1 (2006), s. 350-354 ISSN 1454-4164 R&D Projects: GA AV ČR IAA1065303; GA ČR GA102/04/2109 Institutional research plan: CEZ:AV0Z20650511 Keywords : optical pumping * Ti:Sa laser * laser diode * emission linewidth * spectroscopy * laser frequency stabilization Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.106, year: 2006

  7. Diode Pumped Alkaline Laser System: A High Powered, Low SWaP Directed Energy Option for Ballistic Missile Defense High-Level Summary - April 2017

    Energy Technology Data Exchange (ETDEWEB)

    Wisoff, P. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-04-28

    The Diode-Pumped Alkali Laser (DPAL) system is an R&D effort funded by the Missile Defense Agency (MDA) underway at Lawrence Livermore National Laboratory (LLNL). MDA has described the characteristics needed for a Boost Phase directed energy (DE) weapon to work against ICBM-class threat missiles. In terms of the platform, the mission will require a high altitude Unmanned Aerial Vehicle (UAV) that can fly in the “quiet” stratosphere and display long endurance – i.e., days on station. In terms of the laser, MDA needs a high power, low size and weight laser that could be carried by such a platform and deliver lethal energy to an ICBM-class threat missile from hundreds of kilometers away. While both the military and industry are pursuing Directed Energy for tactical applications, MDA’s objectives pose a significantly greater challenge than other current efforts in terms of the power needed from the laser, the low size and weight required, and the range, speed, and size of the threat missiles. To that end, MDA is funding two R&D efforts to assess the feasibility of a high power (MWclass) and low SWaP (size, weight and power) laser: a fiber combining laser (FCL) project at MIT’s Lincoln Laboratory, and LLNL’s Diode-Pumped Alkali Laser (DPAL) system.

  8. Color deviations in phosphor converted high power light emitting diodes under different dimming schemes

    International Nuclear Information System (INIS)

    Ludwiczak, Bogna; Jantsch, Wolfgang

    2015-01-01

    We investigate experimentally the color stability of high power phosphor converted InGaN LEDs under pulse width modulation (PWM) and continuous current reduction (CCR) dimming modes and for varied operation temperatures. Our measurements reveal that the chromaticity coordinate pathways of the warm white and the cold white LED's differ for the same operation conditions. The color deviation- minimizing phenomenon of opposite peak wavelength shifts appears only for a cold white LED under CCR driving mode. This favorable effect does not occur for warm white LEDs. This type of LED exhibits the best color stability under PWM driving mode. The experimental results are consistently explained in terms of the quantum confined Stark effect and temperature induced changes of the LED emission. - Highlights: • Cold and warm white LEDs reacts colorimetrically unlike in different driving modes. • For cold white emission driving conditions are crucial. • Opposite peak wavelength shifts reduces color deviations for cold white emission. • For warm white emission rather phosphor properties determines color deviations

  9. High Power Continuous-Wave Diode-End-Pumped 1.34-μm Nd:GdVO4 Laser

    International Nuclear Information System (INIS)

    Rui, Zhou; Shuang-Chen, Ruan; Chen-Lin, Du; Jian-Quan, Yao

    2008-01-01

    A high power cw all-solid-state 1.34-μm Nd:GdVO 4 laser is experimentally demonstrated. With a diode-double-end-pumped configuration and a simple plane-parallel cavity, a maximum output power of 27.9W is obtained at incident pump power of 96 W, introducing a slope efficiency of 35.4%. To the best of our knowledge, this is the highest output power of diode-end-pumped 1.3-μm laser. With the experimental data, the thermal-stress-resistance figure of merit of Nd:GdVO 4 crystal with 0.3 at% Nd 3+ doped level is calculated to be larger than 9.94 W/cm

  10. Micro-Fabrication of Spray Cooling Nozzles for High-Power Diode Laser Arrays

    National Research Council Canada - National Science Library

    Chow, Louis

    2003-01-01

    .... A novel fabrication method was developed in the late 1980's called stereolithography. This process involved using a low power laser to introduce free radicals in a polymer in which the molecules would cross-link and become solid...

  11. High-Power and High-Efficiency 1.3- µm Superluminescent Diode With Flat-Top and Ultrawide Emission Bandwidth

    KAUST Repository

    Khan, Mohammed Zahed Mustafa; Alhashim, Hala H.; Ng, Tien Khee; Ooi, Boon S.

    2015-01-01

    We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.

  12. High-Power and High-Efficiency 1.3- µm Superluminescent Diode With Flat-Top and Ultrawide Emission Bandwidth

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2015-02-01

    We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.

  13. Thermal characterizations analysis of high-power ThinGaN cool-white light-emitting diodes

    Science.gov (United States)

    Raypah, Muna E.; Devarajan, Mutharasu; Ahmed, Anas A.; Sulaiman, Fauziah

    2018-03-01

    Analysis of thermal properties plays an important role in the thermal management of high-power (HP) lighting-emitting diodes (LEDs). Thermal resistance, thermal capacitance, and thermal time constant are essential parameters for the optimal design of the LED device and system, particularly for dynamic performance study. In this paper, thermal characterization and thermal time constant of ThinGaN HP LEDs are investigated. Three HP cool-white ThinGaN LEDs from different manufacturers are used in this study. A forward-voltage method using thermal transient tester (T3Ster) system is employed to determine the LEDs' thermal parameters at various operating conditions. The junction temperature transient response is described by a multi-exponential function model to extract thermal time constants. The transient response curve is divided into three layers and expressed by three exponential functions. Each layer is associated with a particular thermal time constant, thermal resistance, and thermal capacitance. It is found that the thermal time constant of LED package is on the order of 22 to 100 ms. Comparison between the experimental results is carried out to show the design effects on thermal performance of the LED package.

  14. Method to improve near-field nonlinearity of a high-power diode laser array on a microchannel cooler

    Science.gov (United States)

    Zhang, Hongyou; Jia, Yangtao; Cai, Wanshao; Tao, Chunhua; Zah, Chung-en; Liu, Xingsheng

    2018-03-01

    Due to thermal stress, each emitter in a semiconductor laser bar or array is vertically displaced along the p-n junction; the result is that each emitter is not in a line, called near-field nonlinearity. Near-field nonlinearity along a laser bar (also known as "SMILE" effect) degrades the laser beam brightness, which causes an adverse effect on optical coupling and beam shaping. A large SMILE value causes a large divergence angle after collimation and a wider line after collimation and focusing. We simulate the factors affecting the SMILE value of a high-power diode laser array on a microchannel cooler (MCC). According to the simulation results, we have fabricated a series of laser bars bonded on MCCs with lower SMILE value. After simulation and experiment analysis, we found the key factor to affect SMILE is the deformation of the thin MCC because of the distribution of strain and stress in it. We also decreased the SMILE value of 1-cm-wide full bar AuSn bonded on MCCs from 12 to 1 μm by balancing force on MCC to minimize the deformation.

  15. A high-power diode-laser-pumped CW Nd:YAG laser using a stable-unstable resonator

    International Nuclear Information System (INIS)

    Mudge, M.; Ostermeyer, P.; Veitch, J.; Munch, J.; Hamilton, M.W.

    2000-01-01

    Full text: The design and operation of a power-scalable diode-laser-pumped CW Nd:YAG zigzag slab laser that uses a stable-unstable resonator with a graded reflectivity mirror as an output coupler is described. We demonstrate control of the thermal lens strength in the unstable plane and weak thermal lensing in the stable plane that is independent of pump power, vital for efficient scalability. This enabled CW operation of the stable-unstable resonator with excellent near- and far-field beam quality

  16. A Novel Kind of Transverse Micro-Stack High-Power Diode Bars

    International Nuclear Information System (INIS)

    Lei, Zhang; Bi-Feng, Cui; Jian-Jun, Li; Wei-Lling, Guo; Zhi-Qun, Wang; Guang-Di, Shen

    2008-01-01

    Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large optical cavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60W under 50A driving current and the slope efficiency reaches 1.55W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transverse strongly coupled devices

  17. A portable high-power diode laser-based single-stage ceramic tile grout sealing system

    Science.gov (United States)

    Lawrence, J.; Schmidt, M. J. J.; Li, L.; Edwards, R. E.; Gale, A. W.

    2002-02-01

    By means of a 60 W high-power diode laser (HPDL) and a specially developed grout material the void between adjoining ceramic tiles has been successfully sealed. A single-stage process has been developed which uses a crushed ceramic tile mix to act as a tough, inexpensive bulk substrate and a glazed enamel surface to provide an impervious surface glaze. The single-stage ceramic tile grout sealing process yielded seals produced in normal atmospheric conditions that displayed no discernible cracks and porosities. The single-stage grout is simple to formulate and easy to apply. Tiles were successfully sealed with power densities as low as 200 kW/ mm2 and at rates of up to 600 mm/ min. Bonding of the enamel to the crushed ceramic tile mix was identified as being primarily due to van der Waals forces and, on a very small scale, some of the crushed ceramic tile mix material dissolving into the glaze. In terms of mechanical, physical and chemical characteristics, the single-stage ceramic tile grout was found to be far superior to the conventional epoxy tile grout and, in many instances, matched and occasionally surpassed that of the ceramic tiles themselves. What is more, the development of a hand-held HPDL beam delivery unit and the related procedures necessary to lead to the commercialisation of the single-stage ceramic tile grout sealing process are presented. Further, an appraisal of the potential hazards associated with the use of the HPDL in an industrial environment and the solutions implemented to ensure that the system complies with the relevant safety standards are given.

  18. CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

    KAUST Repository

    Pourhashemi, A.; Farrell, R.M.; Cohen, D.A.; Becerra, D.L.; DenBaars, S.P.; Nakamura, S.

    2016-01-01

    Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

  19. CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

    KAUST Repository

    Pourhashemi, A.

    2016-10-11

    Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

  20. High power vertical stacked and horizontal arrayed diode laser bar development based on insulation micro-channel cooling (IMCC) and hard solder bonding technology

    Science.gov (United States)

    Wang, Boxue; Jia, Yangtao; Zhang, Haoyu; Jia, Shiyin; Liu, Jindou; Wang, Weifeng; Liu, Xingsheng

    2018-02-01

    An insulation micro-channel cooling (IMCC) has been developed for packaging high power bar-based vertical stack and horizontal array diode lasers, which eliminates many issues caused in its congener packaged by commercial copper formed micro-channel cooler(MCC), such as coefficient of thermal expansion (CTE) mismatch between cooler and diode laser bar, high coolant quality requirement (DI water) and channel corrosion and electro-corrosion induced by DI water if the DI-water quality is not well maintained The IMCC cooler separates water flow route and electrical route, which allows tap-water as coolant without electro-corrosion and therefore prolongs cooler lifetime dramatically and escalated the reliability of these diode lasers. The thickness of ceramic and copper in an IMCC cooler is well designed to minimize the CTE mismatch between laser bar and cooler, consequently, a very low "SMILE" of the laser bar can be achieved for small fast axis divergence after collimation. In additional, gold-tin hard solder bonding technology was also developed to minimize the risk of solder electromigration at high current density and thermal fatigue under hard-pulse operation mode. Testing results of IMCC packaged diode lasers are presented in this report.

  1. Recombination centers and electrical characteristics in silicon power p-i-n diodes irradiated with high energy electrons

    International Nuclear Information System (INIS)

    Fuochi, P.G.; Martelli, A.; Passerini, B.; Zambelli, M.

    1988-01-01

    Recombination centers introduced by irradiation with 12 MeV electrons in large area silicon diodes with p-i-n structure are studied with the Deep Level Transient Spectroscopy technique (DLTS). The effects of these levels on the electrical characteristics of the devices are related to their position Esub(t) in the silicon forbidden gap, their concentration and their electron capture cross section. Changes of defect configuration during an annealing process at 360 0 C have been observed and a detailed analysis of the DLTS spectra has shown a complex defect pattern. Four major recombination centers have been identified: Esub(c) - Esub(t) = 0.17 eV, Esub(c) - Esub(t) = 0.19 eV, Esub(c) -Esub(t) 0.31 eV, Esub(c) - Esub(t) = 0.39 eV, where Esub(c) is the energy corresponding to the lower limit of the conduction band. The first energy level, known as A-center, is the dominant recombination level controlling the minority carrier lifetime after room temperature irradiation. As the annealing proceeds the center at Esub(c) - Esub(t) = 0.31 eV becomes the dominant one. The complex structure of the centers has been studied and demonstrated with the aid of proper modelling implemented on a set of numerical simulation tools. In this way it has been possible to analyze more accurately the defect kinetics during annealing. The study of the defect behaviour during the annealing process has resulted in an improved application of electron irradiation as a standard production technique in the manufacturing process of high power devices. (author)

  2. High-power narrow-linewidth quasi-CW diode-pumped TEM00 1064 nm Nd:YAG ring laser.

    Science.gov (United States)

    Liu, Yuan; Wang, Bao-shan; Xie, Shi-yong; Bo, Yong; Wang, Peng-yuan; Zuo, Jun-wei; Xu, Yi-ting; Xu, Jia-lin; Peng, Qin-jun; Cui, Da-fu; Xu, Zu-yan

    2012-04-01

    We demonstrated a high average power, narrow-linewidth, quasi-CW diode-pumped Nd:YAG 1064 nm laser with near-diffraction-limited beam quality. A symmetrical three-mirror ring cavity with unidirectional operation elements and an etalon was employed to realize the narrow-linewidth laser output. Two highly efficient laser modules and a 90° quartz rotator for birefringence compensation were used for the high output power. The maximum average output power of 62.5 W with the beam quality factor M(2) of 1.15 was achieved under a pump power of 216 W at a repetition rate of 500 Hz, corresponding to the optical-to-optical conversion efficiency of 28.9%. The linewidth of the laser at the maximum output power was measured to be less than 0.2 GHz.

  3. Experimental and numerical investigation on cladding of corrosion-erosion resistant materials by a high power direct diode laser

    Science.gov (United States)

    Farahmand, Parisa

    advantages due to creating coating layers with superior properties in terms of purity, homogeneity, low dilution, hardness, bonding, and microstructure. In the development of modern materials for hardfacing applications, the functionality is often improved by combining materials with different properties into composites. Metal Matrix Composite (MMC) coating is a composite material with two constituent parts, i.e., matrix and the reinforcement. This class of composites are addressing improved mechanical properties such as stiffness, strength, toughness, and tribological and chemical resistance. Fabrication of MMCs is to achieve a combination of properties not achievable by any of the materials acting alone. MMCs have attracted significant attention for decades due to their combination of wear-resistivity, corrosion-resistivity, thermal, electrical and magnetic properties. Presently, there is a strong emphasis on the development of advanced functional coatings for corrosion, erosion, and wear protection for different industrial applications. In this research, a laser cladding system equipped with a high power direct diode laser associated with gas driven metal powder delivery system was used to develop advanced MMC coatings. The high power direct diode laser used in this study offers wider beam spot, shorter wavelength and uniform power distribution. These properties make the cladding set-up ideal for coating due to fewer cladding tracks, lower operation cost, higher laser absorption, and improved coating qualities. In order to prevent crack propagation, porosity, and uniform dispersion of carbides in MMC coating, cladding procedure was assisted by an induction heater as a second heat source. The developed defect free MMC coatings were combined with nano-size particles of WC, rare earth (RE) element (La2O3), and Mo as a refractory metal to enhance mechanical properties, chemical composition, and subsequently improve the tribological performance of the coatings. The resistance

  4. Power blue and green laser diodes and their applications

    Science.gov (United States)

    Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

    2013-03-01

    InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

  5. Laser-assisted selective fusing of thermal sprayed Ni-based self-fluxing alloys by using high-power diode lasers

    Science.gov (United States)

    Chun, Eun-Joon; Kim, Min-Su; Nishikawa, Hiroshi; Park, Changkyoo; Suh, Jeong

    2018-03-01

    Fusing treatment of Ni-based self-fluxing alloys (Metco-16C and 1276F) was performed using high-power diode lasers to control the temperature of the substrate's surface in real time. The effects of the fusing treatment temperature on the microstructural change and hardness distribution were also investigated. For Metco-16C and 1276F, the macrostructural inhomogeneity (voids) within the thermal sprayed layer decreased considerably as the fusing temperature increased. For both self-fluxing alloys, the optimal temperature for fusing was approximately 1423 K (for Metco-16C) and 1373 K (for 1276F), both of which are within the solid state temperature range; these temperatures maximize the alloy hardness together with the macrostructural homogeneity. In this temperature range, the microstructure consists of a lamellar-structured matrix phase with fine (diode laser system.

  6. 5.5nm wavelength-tunable high-power MOPA diode laser system at 971 nm

    Science.gov (United States)

    Tawfieq, Mahmoud; Müller, André; Fricke, Jörg; Della Casa, Pietro; Ressel, Peter; Ginolas, Arnim; Feise, David; Sumpf, Bernd; Tränkle, Günther

    2018-02-01

    In this work, a widely tunable hybrid master oscillator power amplifier (MOPA) diode laser with 6.2 W of output power at 971.8 nm will be presented. The MO is a DBR laser, with a micro heater embedded on top of the DBR grating for wavelength tunability. The emitted light of the MO is collimated and coupled into a tapered amplifier using micro cylindrical lenses, all constructed on a compact 25 mm × 25 mm conduction cooled laser package. The MOPA system emits light with a measured spectral width smaller than 17 pm, limited by the spectrometer, and with a beam propagation factor of M2 1/e2 = 1.3 in the slow axis. The emission is thus nearly diffraction limited with 79% of the total power within the central lobe (4.9 W diffraction limited). The electrically controlled micro-heater provides up to 5.5 nm of wavelength tunability, up to a wavelength of 977.3 nm, while maintaining an output power variation of only +/- 0.16 % for the entire tuning range.

  7. High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells

    International Nuclear Information System (INIS)

    Liao Yongping; Zhang Yu; Xing Junliang; Wei Sihang; Hao Hongyue; Wang Guowei; Xu Yingqiang; Niu Zhichuan

    2015-01-01

    2 μm AlGaAsSb/InGaSb type-I quantum-well high-power laser diodes (LDs) are grown using molecular beam epitaxy. Stripe-type waveguide single LD (single emitter) and array LD (four emitters) devices without facet coatings are fabricated. For the single LDs (single emitter) device, the maximum output power under continuous wave (CW) operation is 0.5 W at 10 °C with a threshold current density of 150 A/cm 2 and a slope efficiency of 0.17 W/A, the output powers under the pulse mode in the 5% duty cycles are much higher, up to 0.98 W. For the array LD devices, the maximum output powers are 1.02 W under the CW mode and 3.03 W under the pulse mode at room temperature. (paper)

  8. High-power diode laser in the circumvestibular incision for Le Fort I osteotomy in orthognathic surgery: a prospective case series study.

    Science.gov (United States)

    Jaeger, Filipe; Chiavaioli, Gustavo Marques; de Toledo, Guilherme Lacerda; Freire-Maia, Belini; Amaral, Marcio Bruno Figueiredo; Mesquita, Ricardo Alves

    2018-01-01

    The incisions during orthognathic surgery are classically performed with conventional scalpel or electrocautery. Considering that the high-power diode laser surgery may provide advantages when compared to conventional incision techniques, the current study aimed to present a prospective case series of patients submitted to circumvestibular incision for Le Fort I osteotomy. Ten patients with dentofacial deformities who underwent to rapid assisted maxillary expansion or bimaxillary orthognathic surgery were enrolled in the study. All incisions were performed by a single surgeon using an 808-nm diode laser, with an optical fiber of 600 μm, at a power of 2.5 W, in a continuous-wave mode. The performance of the incision was evaluated by incision velocity, bleeding, edema, secondary infection, clinical healing, and pain. The velocity of the incision ranged from 0.10 to 0.20 mm/s (mean 0.13 ± 0.03 mm/s). Considering bleeding during the soft tissue incision, all surgeries were classified as absent bleeding. All patients presented a clinical healing of the surgical wound in a period that range from 3 to 5 weeks and experienced swelling during the follow-up period. On average, approximately 50% of the swelling had resolved after the third postoperative week, and 28.8% of swelling remained after 2 months after the surgery. The pain decreased after 2 and 3 days, and 90.0% of the patients reported no pain after 7 postoperative days. High-power diode laser is effective and safety during circumvestibular incisions for Le Fort I osteotomy in orthognathic surgery decreasing bleeding, surgery time, pain, and edema after orthognathic surgery.

  9. Development of high-power diode lasers with beam parameter product below 2 mm×mrad within the BRIDLE project

    Science.gov (United States)

    Crump, P.; Decker, J.; Winterfeldt, M.; Fricke, J.; Maaßdorf, A.; Erbert, G.; Tränkle, G.

    2015-03-01

    High power broad-area diode lasers are the most efficient source of optical energy, but cannot directly address many applications due to their high lateral beam parameter product BPP = 0.25 × ΘL 95%× W95% (ΘL95% and W95% are emission angle and aperture at 95% power content), with BPP > 3 mm×mrad for W95%~90μm. We review here progress within the BRIDLE project, that is developing diode lasers with BPP BPP. TPLs monolithically combine a single mode region at the rear facet with a tapered amplifier, restricting the device to one lateral mode for lowest BPP. TPLs fabricated using ELoD (Extremely Low Divergence) epitaxial designs are shown to operate with BPP below 2mm×mrad, but at cost of low efficiency (BPP 50% to output of > 7 W, so are currently the preferred design. In studies to further reduce BPP, lateral resonant anti-guiding structures have also been assessed. Optimized anti-guiding designs are shown to reduce BPP by 1 mm×mrad in conventional 90 μm stripe BA-lasers, without power penalty. In contrast, no BPP improvement is observed in NBA lasers, even though their spectrum indicates they are restricted to single mode operation. Mode filtering alone is therefore not sufficient, and further measures will be needed for reduced BPP.

  10. Power saving regulated light emitting diode circuit

    International Nuclear Information System (INIS)

    Haville, G. D.

    1985-01-01

    A power saving regulated light source circuit, comprising a light emitting diode (LED), a direct current source and a switching transistor connected in series with the LED, a control voltage producing resistor connected in series with the LED to produce a control voltage corresponding to the current through the LED, a storage capacitor connected in parallel with the series combination of the LED and the resistor, a comparator having its output connected to the input of the transistor, the comparator having a reference input and a control input, a stabilized biasing source for supplying a stabilized reference voltage to the reference input, the control input of the comparator being connected to the control voltage producing resistor, the comparator having a high output state when the reference voltage exceeds the control voltage while having a low output state when the control voltage exceeds the reference voltage, the transistor being conductive in response to the high state while being nonconductive in response to the low state, the transistor when conductive being effective to charge the capacitor and to increase the control voltage, whereby the comparator is cycled between the high and low output states while the transistor is cycled between conductive and nonconductive states

  11. Development of laser diode-pumped high average power solid-state laser for the pumping of Ti:sapphire CPA system

    Energy Technology Data Exchange (ETDEWEB)

    Maruyama, Yoichiro; Tei, Kazuyoku; Kato, Masaaki; Niwa, Yoshito; Harayama, Sayaka; Oba, Masaki; Matoba, Tohru; Arisawa, Takashi; Takuma, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-03-01

    Laser diode pumped all solid state, high repetition frequency (PRF) and high energy Nd:YAG laser using zigzag slab crystals has been developed for the pumping source of Ti:sapphire CPA system. The pumping laser installs two main amplifiers which compose ring type amplifier configuration. The maximum amplification gain of the amplifier system is 140 and the condition of saturated amplification is achieved with this high gain. The average power of fundamental laser radiation is 250 W at the PRF of 200 Hz and the pulse duration is around 20 ns. The average power of second harmonic is 105 W at the PRF of 170 Hz and the pulse duration is about 16 ns. The beam profile of the second harmonic is near top hat and will be suitable for the pumping of Ti:sapphire laser crystal. The wall plug efficiency of the laser is 2.0 %. (author)

  12. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup ¯}1{sup ¯}) GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Pourhashemi, A., E-mail: pourhashemi@engr.ucsb.edu; Farrell, R. M.; Cohen, D. A.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup ¯}1{sup ¯}) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

  13. In vitro study of 960 nm high power diode laser applications in dental enamel, aided by the presence of a photoinitiator dye: scanning electron microscopy analysis

    International Nuclear Information System (INIS)

    Oliveira, Marcelo Vinicius de

    2002-06-01

    The objective of this study is to verify if a high power diode laser can effectively modify the morphology of an enamel surface, and if this can be done in a controlled fashion by changing the lasers parameters. Previous studies using SEM demonstrated that through irradiation with Nd:YAG laser (1064 nm) it is possible to modify the morphology of the dental surface in such way as to increase its resistance against caries decays. The desired procedures that should achieve a decrease of the index of caries decays and of its sequels are on a primary level, which means that action is necessary before the disease installs itself. In this study it was used for the first time a prototype of a high power diode laser operating at 960 nm, produced by the Laboratory of Development of Lasers of the Center for Lasers and Applications of the IPEN. This equipment can present several advantages as reliability, reduced size and low cost. The aim was establish parameters of laser irradiation that produce the desired effects wanted in the enamel and protocols that guarantee its safety during application in dental hard tissues, protecting it of heating effects such as fissures and carbonization. (author)

  14. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  15. Modelling of the thermal parameters of high-power linear laser-diode arrays. Two-dimensional transient model

    International Nuclear Information System (INIS)

    Bezotosnyi, V V; Kumykov, Kh Kh

    1998-01-01

    A two-dimensional transient thermal model of an injection laser is developed. This model makes it possible to analyse the temperature profiles in pulsed and cw stripe lasers with an arbitrary width of the stripe contact, and also in linear laser-diode arrays. This can be done for any durations and repetition rates of the pump pulses. The model can also be applied to two-dimensional laser-diode arrays operating quasicontinuously. An analysis is reported of the influence of various structural parameters of a diode array on the thermal regime of a single laser. The temperature distributions along the cavity axis are investigated for different variants of mounting a crystal on a heat sink. It is found that the temperature drop along the cavity length in cw and quasi-cw laser diodes may exceed 20%. (lasers)

  16. Microstructure, microhardness and corrosion resistance of remelted TiG2 and Ti6Al4V by a high power diode laser

    International Nuclear Information System (INIS)

    Amaya-Vazquez, M.R.; Sánchez-Amaya, J.M.; Boukha, Z.; Botana, F.J.

    2012-01-01

    Highlights: ► Laser remelting of TiG2 and Ti6Al4V is performed with argon shielded diode laser. ► Microstructure, microhardness and corrosion of remelted samples are deeply analysed. ► Microstructural changes of laser remelted TiG2 lead to microhardness increase. ► Remelted Ti6Al4V presents microhardness increase and corrosion improvement. ► Martensite depth in remelted Ti6Al4V is linearly proportional to laser fluence. - Abstract: The high strength, low density and superior corrosion resistance allow titanium alloys to be widely employed in different industrial applications. The properties of these alloys can be modulated by different heat treatments, including laser processing. In the present paper, laser remelting treatments, performed with a high power diode laser, were applied to samples of two titanium alloys (TiG2 and Ti6Al4V). The influence of the applied laser fluence on microstructure, microhardness and corrosion resistance is investigated. Results show that laser remelting treatments with appropriate fluences provoke microstructural changes leading to microhardness increase and corrosion resistance improvement.

  17. Microstructure, microhardness and corrosion resistance of remelted TiG2 and Ti6Al4V by a high power diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Amaya-Vazquez, M.R. [Laboratorio de Corrosion y Proteccion, Universidad de Cadiz, Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Avda. Republica Saharaui s/n, 11510 Puerto Real, Cadiz (Spain); Sanchez-Amaya, J.M., E-mail: josemaria.sanchez@uca.es [Titania, Ensayos y Proyectos Industriales S.L., Ctra Sanlucar A-2001 Km 7,5, Parque Tecnologico TecnoBahia-Edif. RETSE Nave 4, 11500 El Puerto de Santa Maria, Cadiz (Spain); Departamento de Fisica Aplicada, CASEM, Avda. Republica Saharaui s/n, 11510-Puerto Real, Cadiz (Spain); Boukha, Z.; Botana, F.J. [Laboratorio de Corrosion y Proteccion, Universidad de Cadiz, Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Avda. Republica Saharaui s/n, 11510 Puerto Real, Cadiz (Spain)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Laser remelting of TiG2 and Ti6Al4V is performed with argon shielded diode laser. Black-Right-Pointing-Pointer Microstructure, microhardness and corrosion of remelted samples are deeply analysed. Black-Right-Pointing-Pointer Microstructural changes of laser remelted TiG2 lead to microhardness increase. Black-Right-Pointing-Pointer Remelted Ti6Al4V presents microhardness increase and corrosion improvement. Black-Right-Pointing-Pointer Martensite depth in remelted Ti6Al4V is linearly proportional to laser fluence. - Abstract: The high strength, low density and superior corrosion resistance allow titanium alloys to be widely employed in different industrial applications. The properties of these alloys can be modulated by different heat treatments, including laser processing. In the present paper, laser remelting treatments, performed with a high power diode laser, were applied to samples of two titanium alloys (TiG2 and Ti6Al4V). The influence of the applied laser fluence on microstructure, microhardness and corrosion resistance is investigated. Results show that laser remelting treatments with appropriate fluences provoke microstructural changes leading to microhardness increase and corrosion resistance improvement.

  18. High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

    2006-01-01

    In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350 nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN/AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN/AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800x800 μm 2 ) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340 nm, the measured differential on-series resistance is 3 Ω with electroluminescence spectrum full width at half maximum of 18 nm. The output power under dc bias saturates at 0.5 mW, while under pulsed operation it saturates at approximately 700 mA to a value of 3 mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350 nm were investigated under dc operation and the output power saturates at 4.5 mW under 200 mA drive current

  19. Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers

    Science.gov (United States)

    Kaul, T.; Erbert, G.; Maaßdorf, A.; Martin, D.; Crump, P.

    2018-02-01

    Broad area lasers that are tailored to be most efficient at the highest achievable optical output power are sought by industry to decrease operation costs and improve system performance. Devices using Extreme-Double-ASymmetric (EDAS) epitaxial designs are promising candidates for improved efficiency at high optical output powers due to low series resistance, low optical loss and low carrier leakage. However, EDAS designs leverage ultra-thin p-side waveguides, meaning that the optical mode is shifted into the n-side waveguide, resulting in a low optical confinement in the active region, low gain and hence high threshold current, limiting peak performance. We introduce here explicit design considerations that enable EDAS-based devices to be developed with increased optical confinement in the active layer without changing the p-side layer thicknesses. Specifically, this is realized by introducing a third asymmetric component in the vicinity of the quantum well. We call this approach Extreme-Triple-ASymmetric (ETAS) design. A series of ETAS-based vertical designs were fabricated into broad area lasers that deliver up to 63% power conversion efficiency at 14 W CW optical output power from a 100 μm stripe laser, which corresponds to the operation point of a kW optical output power in a laser bar. The design process, the impact of structural changes on power saturation mechanisms and finally devices with improved performance will be presented.

  20. Optoacoustic response from graphene-based solutions embedded in optical phantoms by using 905-nm high-power diode-laser assemblies

    Science.gov (United States)

    Leggio, Luca; Gallego, Daniel C.; Gawali, Sandeep Babu; Dadrasnia, Ehsan; Sánchez, Miguel; Rodríguez, Sergio; González, Marta; Carpintero, Guillermo; Osiński, Marek; Lamela, Horacio

    2016-03-01

    During the last two decades, optoacoustic imaging has been developed as a novel biomedical imaging technique based on the generation of ultrasound waves by means of laser light. In this work, we investigate the optoacoustic response from graphene-based solutions by using a compact and cost-effective system based on an assembly of several 905-nm pulsed high-power diode lasers coupled to a bundle of 200-μm diameter- core optical fibers. The coupled light is conveyed into a lens system and focused on an absorber consisting of graphene-based nanomaterials (graphene oxide, reduced graphene oxide, and reduced graphene-oxide/gold-nanoparticle hybrid, respectively) diluted in ethanol and hosted in slightly scattering optical phantoms. The high absorption of these graphene-based solutions suggests their potential future use in optoacoustic applications as contrast agents.

  1. High-power diode-end-pumped Tm:YLF slab laser delivering 189 W at 1890 nm

    CSIR Research Space (South Africa)

    Koen, W

    2010-09-01

    Full Text Available Laser Delivering 189 W at 1890 nm W. Koen, H.J. Strauss, C. Bollig and M.J.D. Esser CSIR National Laser Centre, Meiring Naude Road, Brummeria, Pretoria, 0001 wkoen@csir.co.za Abstract: We present a high-power Tm:YLF slab laser double...

  2. Tunable high-power narrow-spectrum external-cavity diode laser at 675 nm as a pump source for UV generation

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Erbert, Gotz

    2011-01-01

    High-power narrow-spectrum diode laser systems based on tapered gain media in external cavity are demonstrated at 675 nm. Two 2-mm-long amplifiers are used, one with a 500-µm-long ridge-waveguide section (device A), the other with a 750-µm-long ridge-waveguide section (device B). The laser system...... of 1.0 W. The laser system B based on device B is tunable from 666 to 685 nm. As high as 1.05 W output power is obtained around 675.67 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M2 is 1.13 at an output power of 0.93 W. The laser...... system B is used as a pump source for the generation of 337.6 nm UV light by single-pass frequency doubling in a BIBO crystal. An output power of 109 µW UV light, corresponding to a conversion efficiency of 0.026%W-1 is attained....

  3. High average power, diode pumped petawatt laser systems: a new generation of lasers enabling precision science and commercial applications

    Science.gov (United States)

    Haefner, C. L.; Bayramian, A.; Betts, S.; Bopp, R.; Buck, S.; Cupal, J.; Drouin, M.; Erlandson, A.; Horáček, J.; Horner, J.; Jarboe, J.; Kasl, K.; Kim, D.; Koh, E.; Koubíková, L.; Maranville, W.; Marshall, C.; Mason, D.; Menapace, J.; Miller, P.; Mazurek, P.; Naylon, A.; Novák, J.; Peceli, D.; Rosso, P.; Schaffers, K.; Sistrunk, E.; Smith, D.; Spinka, T.; Stanley, J.; Steele, R.; Stolz, C.; Suratwala, T.; Telford, S.; Thoma, J.; VanBlarcom, D.; Weiss, J.; Wegner, P.

    2017-05-01

    Large laser systems that deliver optical pulses with peak powers exceeding one Petawatt (PW) have been constructed at dozens of research facilities worldwide and have fostered research in High-Energy-Density (HED) Science, High-Field and nonlinear physics [1]. Furthermore, the high intensities exceeding 1018W/cm2 allow for efficiently driving secondary sources that inherit some of the properties of the laser pulse, e.g. pulse duration, spatial and/or divergence characteristics. In the intervening decades since that first PW laser, single-shot proof-of-principle experiments have been successful in demonstrating new high-intensity laser-matter interactions and subsequent secondary particle and photon sources. These secondary sources include generation and acceleration of charged-particle (electron, proton, ion) and neutron beams, and x-ray and gamma-ray sources, generation of radioisotopes for positron emission tomography (PET), targeted cancer therapy, medical imaging, and the transmutation of radioactive waste [2, 3]. Each of these promising applications requires lasers with peak power of hundreds of terawatt (TW) to petawatt (PW) and with average power of tens to hundreds of kW to achieve the required secondary source flux.

  4. Comparison of SHG Power Modulation by Wavelength Detuning of DFB- and DBR-Tapered Laser Diodes

    DEFF Research Database (Denmark)

    Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

    2016-01-01

    of the response of the second harmonic light to perturbations of the infrared laser diode and compare how the response differs for DFB- and DBR-Tapered laser diodes. We show that the visible light can be modulated from CW to kHz with modulation depths above 90% by wavelength detuning the laser diode.......Pulsed visible lasers are used for a number of applications such as laser displays and medical treatments. Generating this visible light by direct frequency doubling of high power diode lasers opens new possibilities on how the power modulation can be performed. We present an investigation...

  5. High-power Al-free active region (λ= 852nm) DFB laser diodes for atomic clocks and interferometry applications

    Science.gov (United States)

    Ligeret, V.; Vermersch, F.-J.; Bansropun, S.; Lecomte, M.; Calligaro, M.; Parillaud, O.; Krakowski, M.

    2017-11-01

    Atomic clocks will be used in the future European positioning system Galileo. Among them, the optically pumped clocks provide a better alternative with comparable accuracy for a more compact system. For these systems, diode lasers emitting at 852nm are strategic components. The laser in a conventional bench for atomic clocks presents disadvantages for spatial applications. A better approach would be to realise a system based on a distributed-feedback laser (DFB). We have developed the technological foundations of such lasers operating at 852nm. These include an Al free active region, a single spatial mode ridge waveguide and a DFB structure. The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. The broad area laser diodes are characterised by low internal losses (value of less than 2MHz.

  6. Dimensional characteristics of welds performed on AISI 1045 steel by means of the application of high power diode laser; Caracteristicas dimensionales de soldadura formadas sobre el acero AISI 1045 mediante la aplicacion del laser diodo de alta potencia

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Castillo, A.; Pou, J.; Lusquinos, F.; Quintero, F.; Soto, R.; Boutinguiza, M.; Saavedra, M.; Perez-Amor, M.

    2004-07-01

    The named High Power diode Laser (HPDL), emits a beam of optical energy generated by diode stimulation and offers the capability of supplying levels of power up to 6 kW. The objective of this research work was to study the main welding variables and their effects on dimensional characteristics of the beads performed by means of application of this novel laser. The results obtained, show that HPDL, is an energy source able to perform welds on AISI 1045 steel plates under conduction mode, without any kind of mechanized preparation, preheating or post-weld treatment and, without filler metal application. (Author) 16 refs.

  7. High power light emitting diode (LED) arrays versus halogen light polymerization of oral biomaterials: Barcol hardness, compressive strength and radiometric properties.

    Science.gov (United States)

    Mills, Robin W; Uhl, Alexander; Blackwell, Gordon B; Jandt, Klaus D

    2002-07-01

    The clinical performance of light polymerized dental composites is greatly influenced by the quality of the light curing unit (LCU) used. Commonly used halogen LCUs have some specific drawbacks such as decreasing light output with time. This may result in a low degree of monomer conversion of the composites with negative clinical implications. Previous studies have shown that blue light emitting diode (LED) LCUs have the potential to polymerize dental composites without having the drawbacks of halogen LCUs. Since these studies were carried out LED technology has advanced significantly and commercial LED LCUs are now becoming available. This study investigates the Barcol hardness as a function of depth, and the compressive strength of dental composites that had been polymerized for 40 or 20s with two high power LED LCU prototypes, a commercial LED LCU, and a commercial halogen LCU. In addition the radiometric properties of the LCUs were characterized. The two high power prototype LED LCUs and the halogen LCU showed a satisfactory and similar hardness-depth performance whereas the hardness of the materials polymerized with the commercial LED LCU rapidly decreased with sample depth and reduced polymerization time (20 s). There were statistically significant differences in the overall compressive strengths of composites polymerized with different LCUs at the 95% significance level (p = 0.0016) with the two high power LED LCU prototypes and the halogen LCU forming a statistically homogenous group. In conclusion, LED LCU polymerization technology can reach the performance level of halogen LCUs. One of the first commercial LED LCUs however lacked the power reserves of the high power LED LCU prototypes.

  8. A compact multi-wavelength optoacoustic system based on high-power diode lasers for characterization of double-walled carbon nanotubes (DWCNTs) for biomedical applications

    Science.gov (United States)

    Leggio, Luca; de Varona, Omar; Escudero, Pedro; Carpintero del Barrio, Guillermo; Osiński, Marek; Lamela Rivera, Horacio

    2015-06-01

    During the last decade, Optoacoustic Imaging (OAI), or Optoacoustic Tomography (OAT), has evolved as a novel imaging technique based on the generation of ultrasound waves with laser light. OAI may become a valid alternative to techniques currently used for the detection of diseases at their early stages. It has been shown that OAI combines the high contrast of optical imaging techniques with high spatial resolution of ultrasound systems in deep tissues. In this way, the use of nontoxic biodegradable contrast agents that mark the presence of diseases in near-infrared (NIR) wavelengths range (0.75-1.4 um) has been considered. The presence of carcinomas and harmful microorganisms can be revealed by means of the fluorescence effect exhibited by biopolymer nanoparticles. A different approach is to use carbon nanotubes (CNTs) which are a contrast agent in NIR range due to their absorption characteristics in the range between 800 to 1200 nm. We report a multi-wavelength (870 and 905 nm) laser diode-based optoacoustic (OA) system generating ultrasound signals from a double-walled carbon nanotubes (DWCNTs) solution arranged inside a tissue-like phantom, mimicking the scattering of a biological soft tissue. Optoacoustic signals obtained with DWCNTs inclusions within a tissue-like phantom are compared with the case of ink-filled inclusions, with the aim to assess their absorption. These measurements are done at both 870 and 905 nm, by using high power laser diodes as light sources. The results show that the absorption is relatively high when the inclusion is filled with ink and appreciable with DWCNTs.

  9. Voltage-Sharing Converter to Supply Single-Phase Asymmetrical Four-Level Diode-Clamped Inverter With High Power Factor Loads

    DEFF Research Database (Denmark)

    Boora, Arash A.; Nami, Alireza; Zare, Firuz

    2010-01-01

    The output voltage quality of some of the single-phase multilevel inverters can be improved when their dc-link voltages are regulated asymmetrically. Symmetrical and asymmetrical multilevel diode-clamped inverters have the problem of dc-link capacitor voltage balancing, especially when power factor...... that the proposed combination of introduced multioutput dc–dc converter and single-phase ADCI is a good candidate for power conversion in residential photovoltaic (PV) utilization....

  10. Laser transurethral resection of the prostate: Safety study of a novel system of photoselective vaporization with high power diode laser in prostates larger than 80mL.

    Science.gov (United States)

    Andrés, G; Arance, I; Gimbernat, H; Redondo, C; García-Tello, A; Angulo, J C

    2015-01-01

    To present the feasibility of photoselective vaporization of the prostate (PVP) with of a new diode laser-resection system. Surgical treatment of benign prostatic hyperplasia (BPH) is constantly evolving. Laser techniques are increasingly used in prostates of large size. A prospective study was performed to evaluate operative data and patient outcomes with PVP using high-power diode laser (HPD) and a novel quartz-head fiber with shovel shape in patients with prostate>80mL. Demographic data, operative time, hemoglobin loss, operative results (IPSS, quality of life (QoL), Qmax, post void residue (PVR), IIEF-5 and micturition diary) and complications following Clavien-Dindo classification are described. Thirty-one patients were included in the study. Sixteen (51.6%) were on active antiplatelet treatment and 12 (38.7%) had received anticoagulants before surgery. All cases were followed at least 6mo. No intraoperative or postoperative major complications occurred. Three patients (9.7%) had minor complications according to Clavien-Dindo classification. Twenty-seven (87.1%) were discharged on postoperative day one without catheter. There were significant improvements in IPSS, QoL, Qmax and PVR, both at 3 and 6mo (Plaser-resection is a safe procedure, achieving excellent results in terms of IPSS, QoL and Qmax in large prostates even in high-risk patients. Longer follow-up, comparative and randomized controlled studies are needed to widespread these results. Copyright © 2014 AEU. Publicado por Elsevier España, S.L.U. All rights reserved.

  11. Determination on the Coefficient of Thermal Expansion in High-Power InGaN-based Light-emitting Diodes by Optical Coherence Tomography.

    Science.gov (United States)

    Lee, Ya-Ju; Chou, Chun-Yang; Huang, Chun-Ying; Yao, Yung-Chi; Haung, Yi-Kai; Tsai, Meng-Tsan

    2017-10-31

    The coefficient of thermal expansion (CTE) is a physical quantity that indicates the thermal expansion value of a material upon heating. For advanced thermal management, the accurate and immediate determination of the CTE of packaging materials is gaining importance because the demand for high-power lighting-emitting diodes (LEDs) is currently increasing. In this study, we used optical coherence tomography (OCT) to measure the CTE of an InGaN-based (λ = 450 nm) high-power LED encapsulated in polystyrene resin. The distances between individual interfaces of the OCT images were observed and recorded to derive the instantaneous CTE of the packaged LED under different injected currents. The LED junction temperature at different injected currents was established with the forward voltage method. Accordingly, the measured instantaneous CTE of polystyrene resin varied from 5.86 × 10 -5  °C -1 to 14.10 × 10 -5  °C -1 in the junction temperature range 25-225 °C and exhibited a uniform distribution in an OCT scanning area of 200 × 200 μm. Most importantly, this work validates the hypothesis that OCT can provide an alternative way to directly and nondestructively determine the spatially resolved CTE of the packaged LED device, which offers significant advantages over traditional CTE measurement techniques.

  12. Amplified spontaneous emission and thermal management on a high average-power diode-pumped solid-state laser - the Lucia laser system

    International Nuclear Information System (INIS)

    Albach, D.

    2010-01-01

    The development of the laser triggered the birth of numerous fields in both scientific and industrial domains. High intensity laser pulses are a unique tool for light/matter interaction studies and applications. However, current flash-pumped glass-based systems are inherently limited in repetition-rate and efficiency. Development within recent years in the field of semiconductor lasers and gain media drew special attention to a new class of lasers, the so-called Diode Pumped Solid State Laser (DPSSL). DPSSLs are highly efficient lasers and are candidates of choice for compact, high average-power systems required for industrial applications but also as high-power pump sources for ultra-high intense lasers. The work described in this thesis takes place in the context of the 1 kilowatt average-power DPSSL program Lucia, currently under construction at the 'Laboratoire d'Utilisation des Laser Intenses' (LULI) at the Ecole Polytechnique, France. Generation of sub-10 nanosecond long pulses with energies of up to 100 joules at repetition rates of 10 hertz are mainly limited by Amplified Spontaneous Emission (ASE) and thermal effects. These limitations are the central themes of this work. Their impact is discussed within the context of a first Lucia milestone, set around 10 joules. The developed laser system is shown in detail from the oscillator level to the end of the amplification line. A comprehensive discussion of the impact of ASE and thermal effects is completed by related experimental benchmarks. The validated models are used to predict the performances of the laser system, finally resulting in a first activation of the laser system at an energy level of 7 joules in a single-shot regime and 6.6 joules at repetition rates up to 2 hertz. Limitations and further scaling approaches are discussed, followed by an outlook for the further development. (author) [fr

  13. Reliability aspects and facet damage in high-power emission from (AlGa)As cw laser diodes at room temperature

    International Nuclear Information System (INIS)

    Kressel, H.; Ladany, I.

    1975-01-01

    Factors are described that limit the optical power output from (AlGa)As laser diodes (lambda = 8100 to 8300 A) operating cw at room temperature with uncoated facets. Rapid laser ''catastrophic'' degradation due to facet damage (in contrast to ''bulk'' phenomena previously considered) has been found to occur as a result of excessive optical flux density at the facets. The diodes studied are capable of initial cw power emission values of 25 to 100 mW from one facet depending on their dimensions. Data are presented showing long-term constant-current operation at power levels below these maximum values. Preliminary data are also presented on devices utilizing dielectric facet coatings to minimize facet damage. (U.S.)

  14. Evaluation of temperature variation in pulp chamber after high power diode laser irradiation (λ=830 nm) on dental enamel: 'in vitro' study

    International Nuclear Information System (INIS)

    Macri, Rodrigo Teixeira

    2001-01-01

    The aim of this study was to observe the variation of temperature in the pulp chamber caused by irradiation of a commercial diode laser operating in continuous wave with wavelength 830 nm over the dental enamel. In the first part of this study, two types of tooth models were tested: 3,5 mm slice and whole tooth. In the second part, we irradiated the buccal si de of the enamel in 2 primary lower incisors from cattle with Opus 10 diode laser for 10 s with power levels of 1 W and 2 W, always using an absorber. Two thermocouples were used. The first one was inserted in the dentin wall closest to the irradiation site, while the second was inserted in the middle of the pulp chamber. It was observed that the thermocouples registered different temperatures. Always, the dentin thermocouple registered higher temperatures. Considering the dentin records, the irradiation of 1 W for 10 s can be safe for the pulp. Further studies must be developed related to the correct positioning of the thermocouples inside the pulp chamber. This was a first step of using diode laser in enamel, and in this study, we concluded that the Opus 10 diode laser shown to be safe for this use, with 1 W power for 10 S. (author)

  15. A two-stage ceramic tile grout sealing process using a high power diode laser—Grout development and materials characteristics

    Science.gov (United States)

    Lawrence, J.; Li, L.; Spencer, J. T.

    1998-04-01

    Work has been conducted using a 60 Wcw high power diode laser (HPDL) in order to determine the feasibility and characteristics of sealing the void between adjoining ceramic tiles with a specially developed grout material having an impermeable enamel surface glaze. A two-stage process has been developed using a new grout material which consists of two distinct components: an amalgamated compound substrate and a glazed enamel surface; the amalgamated compound seal providing a tough, heat resistant bulk substrate, whilst the enamel provides an impervious surface. HPDL processing has resulted in crack free seals produced in normal atmospheric conditions. The basic process phenomena are investigated and the laser effects in terms of seal morphology, composition and microstructure are presented. Also, the resultant heat affects are analysed and described, as well as the effects of the shield gases, O 2 and Ar, during laser processing. Tiles were successfully sealed with power densities as low as 500 W/cm 2 and at rates up to 600 mm/min. Contact angle measurements revealed that due to the wettability characteristics of the amalgamated oxide compound grout (AOCG), laser surface treatment was necessary in order to alter the surface from a polycrystalline to a semi-amorphous structure, thus allowing the enamel to adhere. Bonding of the enamel to the AOCG and the ceramic tiles was identified as being principally due to van der Waals forces, and on a very small scale, some of the base AOCG material dissolving into the glaze.

  16. Optical design and fabrication of palm/fingerprint uniform illumination system with a high-power near-infrared light-emitting diode.

    Science.gov (United States)

    Jing, Lei; Wang, Yao; Zhao, Huifu; Ke, Hongliang; Wang, Xiaoxun; Gao, Qun

    2017-06-10

    In order to meet the requirements of uniform illumination for optical palm/fingerprint instruments and overcome the shortcomings of the poor uniform illumination on the working plane of the optical palm/fingerprint prism, a novel secondary optical lens with a free-form surface, compact structure, and high uniformity is presented in this paper. The design of the secondary optical lens is based on emission properties of the near-infrared light-emitting diode (LED) and basic principles of non-imaging optics, especially considering the impact of the thickness of the prism in the design. Through the numerical solution of Snell's law in geometric optics, we obtain the profile of the free-form surface of the lens. Using the optical software TracePro, we trace and simulate the illumination system. The results show that the uniformity is 89.8% on the working plane of the prism, and the test results show that the actual uniformity reaches 85.7% in the experiment, which provides an effective way for realizing a highly uniform illumination system with high-power near-infrared LED.

  17. High Power Efficiency Solution-Processed Blue Phosphorescent Organic Light-Emitting Diodes Using Exciplex-Type Host with a Turn-on Voltage Approaching the Theoretical Limit.

    Science.gov (United States)

    Ban, Xinxin; Sun, Kaiyong; Sun, Yueming; Huang, Bin; Ye, Shanghui; Yang, Min; Jiang, Wei

    2015-11-18

    Three solution-processable exciplex-type host materials were successfully designed and characterized by equal molar blending hole transporting molecules with a newly synthesized electron transporting material, which possesses high thermal stability and good film-forming ability through a spin-coating technique. The excited-state dynamics and the structure-property relationships were systematically investigated. By gradually deepening the highest occupied molecular orbital (HOMO) level of electron-donating components, the triplet energy of exciplex hosts were increased from 2.64 to 3.10 eV. Low temperature phosphorescence spectra demonstrated that the excessively high triplet energy of exciplex would induce a serious energy leakage from the complex state to the constituting molecule. Furthermore, the low energy electromer state, which only exists under the electroexcitation, was found as another possible channel for energy loss in exciplex-based phosphorescent organic light-emitting diodes (OLEDs). In particular, as quenching of the exciplex-state and the triplet exciton were largely eliminated, solution-processed blue phosphorescence OLEDs using the exciplex-type host achieved an extremely low turn-on voltage of 2.7 eV and record-high power efficiency of 22.5 lm W(-1), which were among the highest values in the devices with identical structure.

  18. Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs

    Science.gov (United States)

    Kaul, T.; Erbert, G.; Maaßdorf, A.; Knigge, S.; Crump, P.

    2018-03-01

    Broad area lasers with novel extreme double asymmetric structure (EDAS) vertical designs featuring increased optical confinement in the quantum well, Γ, are shown to have improved temperature stability without compromising series resistance, internal efficiency or losses. Specifically, we present here vertical design considerations for the improved continuous wave (CW) performance of devices operating at 940 nm, based on systematically increasing Γ from 0.26% to 1.1%, and discuss the impact on power saturation mechanisms. The results indicate that key power saturation mechanisms at high temperatures originate in high threshold carrier densities, which arise in the quantum well at low Γ. The characteristic temperatures, T 0 and T 1, are determined under short pulse conditions and are used to clarify the thermal contribution to power limiting mechanisms. Although increased Γ reduces thermal power saturation, it is accompanied by increased optical absorption losses in the active region, which has a significant impact on the differential external quantum efficiency, {η }{{diff}}. To quantify the impact of internal optical losses contributed by the quantum well, a resonator length-dependent simulation of {η }{{diff}} is performed and compared to the experiment, which also allows the estimation of experimental values for the light absorption cross sections of electrons and holes inside the quantum well. Overall, the analysis enables vertical designs to be developed, for devices with maximized power conversion efficiency at high CW optical power and high temperatures, in a trade-off between absorption in the well and power saturation. The best balance to date is achieved in devices using EDAS designs with {{Γ }}=0.54 % , which deliver efficiencies of 50% at 14 W optical output power at an elevated junction temperature of 105 °C.

  19. High current, high bandwidth laser diode current driver

    Science.gov (United States)

    Copeland, David J.; Zimmerman, Robert K., Jr.

    1991-01-01

    A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

  20. High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

    Science.gov (United States)

    Frez, Clifford F.; Briggs, Ryan M.; Forouhar, Siamak; Borgentun, Carl E.; Gupta, James

    2013-01-01

    Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single-mode light sources aboard both satellite and unmanned aerial vehicle platforms. There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 micron, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 micron. For emission wavelengths shorter than 3 micron, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated singlemode GaSb-based laser diodes emitting between 2 and 3 micron have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption. By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-micron lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777/cm (2.65 micron) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3-micron spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available. Monolithic ridge-waveguide GaSb lasers were fabricated that utilize secondorder lateral Bragg gratings to generate single-mode emission from InGaAsSb/ Al

  1. Interface and thickness tuning for blade coated small-molecule organic light-emitting diodes with high power efficiency

    Science.gov (United States)

    Chang, Yu-Fan; Chiu, Yu-Chian; Chang, Hao-Wen; Wang, Yi-Siang; Shih, Yi-Lun; Wu, Chih-Hao; Liu, Yi-Lun; Lin, Yu-Sheng; Meng, Hsin-Fei; Chi, Yun; Huang, Heh-Lung; Tseng, Mei-Rurng; Lin, Hao-Wu; Zan, Hsiao-Wen; Horng, Sheng-Fu; Juang, Jenh-Yih

    2013-09-01

    We developed a general method based on fluorescence microscopy to characterize the interface dissolution in multi-layer organic light-emitting diodes (OLEDs) by blade coating. A sharp bi-layer edge was created before blade coating, with the bottom layer being insoluble and top layer soluble. After blade coating, fluorescence images showed that the edge of the top layer shifted when the layer dissolved completely, whereas the bottom layer's edge remained in place as a positioning mark. The dissolution depth was determined to be 15-20 nm when the emissive-layer host of 2,6-bis (3-(9H-carbazol-9-yl)phenyl) pyridine (26DCzPPy) was coated on the hole-transport layer of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine(NPB), which was consistent with a sudden drop in efficiency of orange OLEDs with layer thickness below 20 nm. Thus, the layer thickness of OLEDs was optimized to stay more than 20 nm for blade coating. For a two-color white OLED with the structure TCTA/26DCzPPy:PO-01-TB:FIrpic/TPBI, efficiency was 24 cd/A and 8.5 lm/W at 1000 cd/m2. For a three-color white OLED with Os(fptz)2(dhpm) added as the emitter, the efficiency was 12.3 cd/A and 3.7 lm/W at 1000 cd/m2. For a green device with the structure TCTA/26DCzPPy:Ir(mppy)3/TPBI, the efficiency was 41.9 cd/A and 23.4 lm/W at 1000 cd/m2.

  2. High brightness diode lasers controlled by volume Bragg gratings

    Science.gov (United States)

    Glebov, Leonid

    2017-02-01

    Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

  3. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    CERN Document Server

    Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

    2015-01-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

  4. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

    KAUST Repository

    Zhao, Chao

    2016-07-28

    A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley–Read–Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.

  5. High Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6....... is the tunnel (Esaki) diode, which provides a low-resistance connection between junctions. We demonstrate an InP-GaAs NW axial heterostructure with tunnel diode behavior. InP and GaAs can be readily n- and p-doped, respectively, and the heterointerface is expected to have an advantageous type II band alignment...

  6. Effects of thermal cycling on aluminum metallization of power diodes

    DEFF Research Database (Denmark)

    Brincker, Mads; Pedersen, Kristian Bonderup; Kristensen, Peter Kjær

    2015-01-01

    Reconstruction of aluminum metallization on top of power electronic chips is a well-known wear out phenomenon under power cycling conditions. However, the origins of reconstruction are still under discussion. In the current study, a method for carrying out passive thermal cycling of power diodes...

  7. High efficiency and broadband acoustic diodes

    Science.gov (United States)

    Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

    2018-01-01

    Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

  8. Properties of surface layer of X40CrMoV5-1 in the relation to remelting conditions by the use of a high power diode laser

    International Nuclear Information System (INIS)

    Dobrzanski, L.A.; Bonek, M.; Klimpel, A.

    2003-01-01

    Investigations included remelting experiments on the X40CrMoV5-1 hot-work steel with the high power diode laser. Tests have been made using the high power diode laser (HPDL) in the technological process of remelting. The effect of remelting parameters on structure and properties of its surface layer, as well as on remelting geometry and shape. The influence of the technological conditions and their effect on the mechanical properties of the surface layer, and especially its hardness has been tested. Dependence of the microhardness changes, on the degree of the laser beam influence on the treated surface, and mostly on the hardness increase in the remelted layer is presented. The influence of remelting process parameters on the structure of substrate material is presented. Guidelines for remelting of the X40CrMoV5-1 steel surface using the high power diode laser feature the outcome of the investigation aimed at obtaining its optimum mechanical and working properties. (author)

  9. Integrated power conditioning for laser diode arrays

    International Nuclear Information System (INIS)

    Hanks, R.L.; Kirbie, H.C.; Newton, M.A.; Farhoud, M.S.

    1995-01-01

    This compact modulator has demonstated its ability to efficiently and accurately drive a laser diode array. The addition of the crowbar protection circuit is an invaluable addition to the integrated system and is capable of protecting the laser diode array against severe damage. We showed that the correlation between measured data and simulation indicates that our modulator model is valid and can be used as a tool in the design of future systems. The spectrometer measurements that we conducted underline the imprtance of current regulation to stable laser operation

  10. Optoacoustic response of gold nanorods in soft phantoms using high-power diode laser assemblies at 870 and 905 nm.

    Science.gov (United States)

    Leggio, L; Gawali, S; Gallego, D; Rodríguez, S; Sánchez, M; Carpintero, G; Lamela, H

    2017-03-01

    In the present paper we show the optoacoustic (OA) response of two solutions of gold nanorods dispersed in distilled water (0.8 mg/ml) and hosted in tissue-like phantoms by using small arrays of HPDLs at 870 and 905 nm as excitation sources. The HPDLs are coupled to a 7-to-1 optical fiber bundle with output diameter of 675 μm. Each solution of gold nanorods exhibits an absorption peak close to the operating wavelength, i.e. ~860 nm and ~900 nm, respectively, to optimize the generation of OA signals. The phantoms are made of agar, intralipid and hemoglobin to simulate a soft biological tissue with reduced properties of scattering. Three 3-mm diameter tubes done in the phantoms at different depths (0.9 cm, 1.8 cm, and 2.7 cm) have been filled with gold nanorods. In this way, OA signals with appreciable SNR are generated at different depths in the phantoms. The high OA response exhibited by gold nanorods suggests their application in OA spectroscopy as exogenous contrast agents to detect and monitor emerging diseases like metastasis and arteriosclerotic plaques.

  11. Rapid sealing and cutting of porcine blood vessels, ex vivo, using a high-power, 1470-nm diode laser.

    Science.gov (United States)

    Giglio, Nicholas C; Hutchens, Thomas C; Perkins, William C; Latimer, Cassandra; Ward, Arlen; Nau, William H; Fried, Nathaniel M

    2014-03-01

    Suture ligation with subsequent cutting of blood vessels to maintain hemostasis during surgery is time consuming and skill intensive. Energy-based electrosurgical and ultrasonic devices are often used to replace sutures and mechanical clips to provide rapid hemostasis and decrease surgery time. Some of these devices may create undesirably large collateral zones of thermal damage and tissue necrosis, or require separate mechanical blades for cutting. Infrared lasers are currently being explored as alternative energy sources for vessel sealing applications. In a previous study, a 1470-nm laser was used to seal vessels 1 to 6 mm in diameter in 5 s, yielding burst pressures of ∼500  mmHg. The purpose of this study was to provide vessel sealing times comparable with current energy-based devices, incorporate transection of sealed vessels, and demonstrate high vessel burst pressures to provide a safety margin for future clinical use. A 110-W, 1470-nm laser beam was transmitted through a fiber and beam shaping optics, producing a 90-W linear beam 3.0 by 9.5 mm for sealing (400  W/cm2), and 1.1 by 9.6 mm for cutting (1080  W/cm2). A two-step process sealed and then transected ex vivo porcine renal vessels (1.5 to 8.5 mm diameter) in a bench top setup. Seal and cut times were 1.0 s each. A burst pressure system measured seal strength, and histologic measurements of lateral thermal spread were also recorded. All blood vessels tested (n=55 seal samples) were sealed and cut, with total irradiation times of 2.0 s and mean burst pressures of 1305±783  mmHg. Additional unburst vessels were processed for histological analysis, showing a lateral thermal spread of 0.94±0.48  mm (n=14 seal samples). This study demonstrated that an optical-based system is capable of precisely sealing and cutting a wide range of porcine renal vessel sizes and, with further development, may provide an alternative to radiofrequency- and ultrasonic-based vessel sealing devices.

  12. Power Scaling of Nonlinear Frequency Converted Tapered Diode Lasers for Biophotonics

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Müller, A.

    2014-01-01

    Diode lasers have proven to be versatile light sources for a wide range of applications. Nonlinear frequency conversion of high brightness diode lasers has recently resulted in visible light power levels in the watts range enabling an increasing number of applications within biophotonics. This re...... and efficiency are included. Application examples within pumping of mode-locked Ti:sapphire lasers and implementation of such lasers in optical coherence tomography are presented showing the application potential of these lasers....

  13. Experimental set-up for high-power pulsed X-rays on the basis of a high-current electron accelerator diode with a pointed brass cathode and an aluminum anode target

    International Nuclear Information System (INIS)

    Goncharov, V.K.; Krekoten', O.V.; Makarov, V.V.

    2015-01-01

    The main aim of this article is to assess experimentally the possibility for the development and manufacturing of a high-power pulse X-ray source on the basis of a high-current electron accelerator of the diode type. This task was realized using a vacuum diode with the explosive plasma cathode from brass and an anode of aluminum foil 850 microns thick. As a result of the experiments performed, it is shown that, for this metal of the anode, the component of X-rays, propagating along electron beam motion, has bigger energy weight than the reflected one. The photographic paper placed in a black dense paper holder was used as a sensor. It is necessary to mark that at present the current investigations have a purely qualitative character. At the same time, the authors have succeeded to define an angle of divergence (~90°) of the generated radiation after an aluminum target. The possibility of generating bremsstrahlung and also the energy estimates indicate applicability of this installation in pure research, and application-oriented purposes, for example, for monitoring of the radiation stability of different electronic products. (authors)

  14. High Power Fiber Laser Test Bed

    Data.gov (United States)

    Federal Laboratory Consortium — This facility, unique within DoD, power-combines numerous cutting-edge fiber-coupled laser diode modules (FCLDM) to integrate pumping of high power rare earth-doped...

  15. Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization

    Science.gov (United States)

    Huang, Robin K.; Chann, Bien; Glenn, John D.

    2011-06-01

    TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.

  16. Comparison of a novel high-power blue diode laser (λ=442 nm) with Ho:YAG (λ=2100 nm), Tm fiber (λ=1940 nm), and KTP (λ=532 nm) lasers for soft tissue ablation

    Science.gov (United States)

    Vinnichenko, Victoriya; Kovalenko, Anastasiya; Arkhipova, Valeriya; Yaroslavsky, Ilya; Altshuler, Gregory; Gapontsev, Valentin

    2018-02-01

    Three lasers were directly compared, including the Ho:YAG laser (λ = 2100 nm), Tm fiber laser (λ = 1940 nm) operating in 3 different modes (CW, regular pulse, and super pulse), and blue diode laser (λ = 442 nm) for vaporization and coagulation efficiency for treating blood-rich soft tissues, ex vivo, in a porcine kidney model at quasi-contact cutting in water. In addition, experimental results were compared with published data on performance of KTP laser (λ = 532 nm) at similar experimental settings (Power = 60 W and cutting speed = 2 mm/s). Tm fiber laser in pulsed mode and blue laser produced highest vaporization rates of 3.7 and 3.4 mm3/s, respectively. Tm fiber laser (in both CW and pulsed modes) also produced the largest coagulation zone among the laser sources tested. A carbonization zone was observed for Tm fiber laser in CW and pulsed modes, as well as for the blue diode laser. Tm fiber laser in super-pulse mode and Ho:YAG laser both resulted in irregular coagulation zones without carbonization. Comparison with known data for KTP laser revealed that tissue effects of the blue laser are similar to that of the KTP laser. These results suggest that the combination of the two lasers (Tm fiber and blue diode) in one system may achieve high cutting efficiency and optimal coagulation for hemostasis during surgical treatment. Ex vivo testing of the combined system revealed feasibility of this approach. The combination of the CW Tm fiber laser (120W) and the blue diode laser (60W) emitting through a combination tip were compared with CW 120 W Tm fiber laser alone and 120 W Ho:YAG laser. Vaporization rates measured 34, 28, and 6 mm3/s, and coagulation zones measured 0.6, 1.3, and 1.7 mm, respectively. A carbonization zone was only observed with CW Tm fiber laser. The vaporization rate of combined CW Tm fiber laser / blue diode laser was comparable to published data for KTP laser for equivalent total power. Thus, high-power blue diode laser, Tm fiber laser, and

  17. Fine tuning power diodes with irradiation

    International Nuclear Information System (INIS)

    Tarneja, K.S.; Bartko, J.; Johnson, J.E.

    1976-01-01

    Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characcteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/tau = 1/tau 0 + K phi, where tau is the desired minority carrier lifetime, tau 0 is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and phi is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 X 10 12 and 5 X 10 13 e/cm 2 , with electron radiation of intensity between 1 and 3 MeV

  18. Simulation study of magnetically insulated power coupling to the applied-B ion diode

    International Nuclear Information System (INIS)

    Rosenthal, S.E.

    1992-01-01

    Power coupling to the applied-B ion diode from magnetically insulated transmission lines is simply described in terms of the voltage-current characteristics of both the diode and the transmission line. The accelerator load line intersects the composite characteristic at the operating voltage and current. Using 2-D PIC simulation, the authors have investigated how modification of either the ion diode or the magnetically insulated transmission line characteristic influences power coupling. Plasma prefill can modify the ion diode characteristic; a partially opened POS in the transmission line upstream of the ion diode is a possible cause of modification of the magnetically insulated transmission line characteristic. It can be useful to consider these two aspects of power coupling separately, but they are actually not independent. A good parameter to characterize the situation is the flow impedance, given by V/(I a 2 I c 2 ) 1/2 . V is the line voltage; I a and I c are the conduction currents flowing through the anode and cathode, respectively. The flow impedance covers a range from one half the vacuum impedance, for saturated magnetically insulated flow, to just below the vacuum impedance, for highly unsaturated flow. As the term ''flow impedance'' implies, low flow impedance coincides with greater electron flow while high flow impedance coincides with less electron flow. The flow impedance is sensitive to both the transmission line and the diode impedance. They show how the two are related, using the flow impedance as a parameter

  19. High brightness diode-pumped organic solid-state laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhuang; Mhibik, Oussama; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien, E-mail: sebastien.forget@univ-paris13.fr [Université Paris 13, Sorbonne Paris Cité, Laboratoire de Physique des Lasers, F-93430, Villetaneuse (France); CNRS, UMR 7538, LPL, F-93430, Villetaneuse (France)

    2015-02-02

    High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

  20. Highly-reliable laser diodes and modules for spaceborne applications

    Science.gov (United States)

    Deichsel, E.

    2017-11-01

    Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

  1. High temperature semiconductor diode laser pumps for high energy laser applications

    Science.gov (United States)

    Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

    2018-02-01

    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

  2. High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

    Science.gov (United States)

    Wang, Gunuk; Lauchner, Adam C; Lin, Jian; Natelson, Douglas; Palem, Krishna V; Tour, James M

    2013-09-14

    An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. High-efficiency diode-pumped femtosecond Yb:YAG ceramic laser

    DEFF Research Database (Denmark)

    Zhou, Binbin; Wei, Z.Y.; Zou, Y.W.

    2010-01-01

    A highly efficient diode-end-pumped femtosecond Yb:yttrium aluminum garnet (YAG) ceramic laser was demonstrated. Pumped by a 968 nm fiber-coupled diode laser, 1.9 W mode-locked output power at a repetition rate of 64.27 MHz was obtained with 3.5 W absorbed pump power, corresponding to a slope...... efficiency of 76%. Our measurement showed that the pulse duration was 418 fs with the central wavelength of 1048 nm....

  4. Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

    DEFF Research Database (Denmark)

    Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

    2015-01-01

    It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with Ga...

  5. Characterization of diode-laser stacks for high-energy-class solid state lasers

    Science.gov (United States)

    Pilar, Jan; Sikocinski, Pawel; Pranowicz, Alina; Divoky, Martin; Crump, P.; Staske, R.; Lucianetti, Antonio; Mocek, Tomas

    2014-03-01

    In this work, we present a comparative study of high power diode stacks produced by world's leading manufacturers such as DILAS, Jenoptik, and Quantel. The diode-laser stacks are characterized by central wavelength around 939 nm, duty cycle of 1 %, and maximum repetition rate of 10 Hz. The characterization includes peak power, electrical-to-optical efficiency, central wavelength and full width at half maximum (FWHM) as a function of diode current and cooling temperature. A cross-check of measurements performed at HiLASE-IoP and Ferdinand-Braun-Institut (FBH) shows very good agreement between the results. Our study reveals also the presence of discontinuities in the spectra of two diode stacks. We consider the results presented here a valuable tool to optimize pump sources for ultra-high average power lasers, including laser fusion facilities.

  6. Large-signal modeling method for power FETs and diodes

    Energy Technology Data Exchange (ETDEWEB)

    Sun Lu; Wang Jiali; Wang Shan; Li Xuezheng; Shi Hui; Wang Na; Guo Shengping, E-mail: sunlu_1019@126.co [School of Electromechanical Engineering, Xidian University, Xi' an 710071 (China)

    2009-06-01

    Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

  7. Large-signal modeling method for power FETs and diodes

    International Nuclear Information System (INIS)

    Sun Lu; Wang Jiali; Wang Shan; Li Xuezheng; Shi Hui; Wang Na; Guo Shengping

    2009-01-01

    Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

  8. Research of long pulse high current diode radial insulation

    International Nuclear Information System (INIS)

    Tan Jie; Chang Anbi; Hu Kesong; Liu Qingxiang; Ma Qiaosheng; Liu Zhong

    2002-01-01

    A radial insulation structure which is used in long pulse high current diode is introduced. The theory of vacuum flashover and the idea of design are briefly introduced. In the research, cone-shaped insulator was used. The geometry structure parameters were optimized by simulating the static electrical field distribution. Experiment was done on a pulse power source with 200 ns pulse width. The maximum voltage 750 kV was obtained, and the average stand-off electrical field of insulator is about 50 kV/cm

  9. High Intensity Organic Light-emitting Diodes

    Science.gov (United States)

    Qi, Xiangfei

    This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

  10. Spectral beam combining of diode lasers with high efficiency

    DEFF Research Database (Denmark)

    Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin

    2012-01-01

    Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation.......Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation....

  11. Theoretical and experimental investigations of the limits to the maximum output power of laser diodes

    International Nuclear Information System (INIS)

    Wenzel, H; Crump, P; Pietrzak, A; Wang, X; Erbert, G; Traenkle, G

    2010-01-01

    The factors that limit both the continuous wave (CW) and the pulsed output power of broad-area laser diodes driven at very high currents are investigated theoretically and experimentally. The decrease in the gain due to self-heating under CW operation and spectral holeburning under pulsed operation, as well as heterobarrier carrier leakage and longitudinal spatial holeburning, are the dominant mechanisms limiting the maximum achievable output power.

  12. Improving the Reliability and Modal Stability of High Power 870 nm AlGaAs CSP Laser Diodes for Applications to Free Space Communication Systems

    Science.gov (United States)

    Connolly, J. C.; Alphonse, G. A.; Carlin, D. B.; Ettenberg, M.

    1991-01-01

    The operating characteristics (power-current, beam divergence, etc.) and reliability assessment of high-power CSP lasers is discussed. The emission wavelength of these lasers was optimized at 860 to 880 nm. The operational characteristics of a new laser, the inverse channel substrate planar (ICSP) laser, grown by metalorganic chemical vapor deposition (MOCVD), is discussed and the reliability assessment of this laser is reported. The highlights of this study include a reduction in the threshold current value for the laser to 15 mA and a degradation rate of less than 2 kW/hr for the lasers operating at 60 mW of peak output power.

  13. Study in vitro of dental enamel irradiated with a high power diode laser operating at 960 nm: morphological analysis of post-irradiation dental surface and thermal effect analysis in pulp chamber due to laser application

    International Nuclear Information System (INIS)

    Quinto Junior, Jose

    2001-01-01

    Objectives: This study examines the structural and thermal modifications induced in dental enamel under dye assisted diode laser irradiation. The aim of this study is to verify if this laser-assisted treatment is capable to modify the enamel surface by causing fusion of the enamel surface layer. At the same time, the pulpal temperature rise must be kept low enough in order not to cause pulpar necrosis. To achieve this target, it is necessary to determine suitable laser parameters. As is known, fusion of the enamel surface followed by re-solidification produce a more acid resistant layer. This surface treatment is being researched as a new method for caries prevention. Method and Materials: A series of fourteen identically prepared enamel samples of human teeth were irradiated with a high power diode laser operating at 960 nm and using fiber delivery. Prior to irradiation, a fine layer of cromophorous ink was applied to the enamel surface. In the first part of the experiment the best parameter for pulse duration was determined. In the second part of the experimental phase the same energy density was used but with different repetition rates. During irradiation we monitored the temperature rise in the pulpal cavity. The morphology of the treated samples was analysed under SEM. Results: The morphology of the treated samples showed a homogeneously re-solidified enamel layer. The results of the temperature analysis showed a decrease of the pulpal temperature rise with decreasing repetition rate. Conclusion: With the diode laser it is possible to cause morphological alterations of the enamel surface, which is known to increase the enamel resistance against acid attack, and still maintain the temperature rise in the pulpar chamber below damage threshold. (author)

  14. April 25, 2003, FY2003 Progress Summary and FY2002 Program Plan, Statement of Work and Deliverables for Development of High Average Power Diode-Pumped Solid State Lasers,and Complementary Technologies, for Applications in Energy and Defense

    International Nuclear Information System (INIS)

    Meier, W; Bibeau, C

    2005-01-01

    The High Average Power Laser Program (HAPL) is a multi-institutional, synergistic effort to develop inertial fusion energy (IFE). This program is building a physics and technology base to complement the laser-fusion science being pursued by DOE Defense programs in support of Stockpile Stewardship. The primary institutions responsible for overseeing and coordinating the research activities are the Naval Research Laboratory (NRL) and Lawrence Livermore National Laboratory (LLNL). The current LLNL proposal is a companion document to the one submitted by NRL, for which the driver development element is focused on the krypton fluoride excimer laser option. The NRL and LLNL proposals also jointly pursue complementary activities with the associated rep-rated laser technologies relating to target fabrication, target injection, final optics, fusion chamber, target physics, materials and power plant economics. This proposal requests continued funding in FY03 to support LLNL in its program to build a 1 kW, 100 J, diode-pumped, crystalline laser, as well as research into high gain fusion target design, fusion chamber issues, and survivability of the final optic element. These technologies are crucial to the feasibility of inertial fusion energy power plants and also have relevance in rep-rated stewardship experiments. The HAPL Program pursues technologies needed for laser-driven IFE. System level considerations indicate that a rep-rated laser technology will be needed, operating at 5-10 Hz. Since a total energy of ∼2 MJ will ultimately be required to achieve suitable target gain with direct drive targets, the architecture must be scaleable. The Mercury Laser is intended to offer such an architecture. Mercury is a solid state laser that incorporates diodes, crystals and gas cooling technologies

  15. Low-loss, low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation

    NARCIS (Netherlands)

    Buda, M.; Vleuten, van der W.C.; Iordache, G.; Acket, G.A.; Roer, van de T.G.; Es, van C.M.; Roy, van B.H.; Smalbrugge, E.

    1999-01-01

    A low-confinement asymmetric GaAs-AlGaAs double-quantum-well molecular-beam-epitaxy grown laser diode structure with optical trap layer is characterized, The value of the internal absorption coefficient is as low as 1.4 cm-1, while keeping the series resistance at values comparable cm with

  16. Power ion beam production in a magnetic-insulated diode placed in a circuit with an inductive storage with a plasmoerosion circuit breaker

    International Nuclear Information System (INIS)

    Anan'in, P.S.; Karpov, V.B.; Krasik, Ya.E.; Paul', E.A.

    1991-01-01

    Consideration is given to results of experimental studies of modes of operation of plasma current breaker and magnetic insulated diode, placed parallel in a circuit with inductive storage and microsecond generator, as well as parameters of high-power ion beam, generated in gas-filled diode. Magnetic field of mirror configuration, which enabled to locate the gas-filled diode dose to breaking region was used for decrease of electrodynamic plasma transfer. It is shown that time delay (of the order of ten and more) of power maximum in gas-filled diode with respect to power maximum in plasma breaker is observed when using passive plasma source on anode

  17. Modification of diode characteristics by electron back-scatter from high-atomic-number anodes

    International Nuclear Information System (INIS)

    Mosher, D.; Cooperstein, G.; Rose, D.V.; Swanekamp, S.B.

    1996-01-01

    In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs

  18. Modification of diode characteristics by electron back-scatter from high-atomic-number anodes

    Energy Technology Data Exchange (ETDEWEB)

    Mosher, D; Cooperstein, G [Naval Research Laboratory, Washington, DC (United States); Rose, D V; Swanekamp, S B [JAYCOR, Vienna, VA (United States)

    1997-12-31

    In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs.

  19. Terraced-heterostructure large-optical-cavity AlGaAs diode laser - A new type of high-power CW single-mode device

    Science.gov (United States)

    Botez, D.; Connolly, J. C.

    1982-01-01

    A new terraced lateral wave confining structure is obtained by liquid phase epitaxy over channeled substrates misoriented perpendicular to the channels' direction. Single spatial and longitudinal mode CW operation is achieved to 50 mW from one facet, in large spot sizes (2 x 7.5 micron, 1/e squared points in intensity) and narrow beams (6 deg x 23 deg), full width half-power). At 70 C ambient temperature CW lasing is obtained to 15 mW from one facet. Weak mode confinement in an asymmetric lateral waveguides provides discrimination against high-order mode oscillation.

  20. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  1. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  2. Multi-kW high-brightness fiber coupled diode laser based on two dimensional stacked tailored diode bars

    Science.gov (United States)

    Bayer, Andreas; Unger, Andreas; Köhler, Bernd; Küster, Matthias; Dürsch, Sascha; Kissel, Heiko; Irwin, David A.; Bodem, Christian; Plappert, Nora; Kersten, Maik; Biesenbach, Jens

    2016-03-01

    The demand for high brightness fiber coupled diode laser devices in the multi kW power region is mainly driven by industrial applications for materials processing, like brazing, cladding and metal welding, which require a beam quality better than 30 mm x mrad and power levels above 3kW. Reliability, modularity, and cost effectiveness are key factors for success in the market. We have developed a scalable and modular diode laser architecture that fulfills these requirements through use of a simple beam shaping concept based on two dimensional stacking of tailored diode bars mounted on specially designed, tap water cooled heat sinks. The base element of the concept is a tailored diode laser bar with an epitaxial and lateral structure designed such that the desired beam quality in slow-axis direction can be realized without using sophisticated beam shaping optics. The optical design concept is based on fast-axis collimator (FAC) and slow-axis collimator (SAC) lenses followed by only one additional focusing optic for efficient coupling into a 400 μm fiber with a numerical aperture (NA) of 0.12. To fulfill the requirements of scalability and modularity, four tailored bars are populated on a reduced size, tap water cooled heat sink. The diodes on these building blocks are collimated simply via FAC and SAC. The building blocks can be stacked vertically resulting in a two-dimensional diode stack, which enables a compact design of the laser source with minimum beam path length. For a single wavelength, up to eight of these building blocks, implying a total of 32 tailored bars, can be stacked into a submodule, polarization multiplexed, and coupled into a 400 μm, 0.12NA fiber. Scalability into the multi kW region is realized by wavelength combining of replaceable submodules in the spectral range from 900 - 1100 nm. We present results of a laser source based on this architecture with an output power of more than 4 kW and a beam quality of 25 mm x mrad.

  3. Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application

    International Nuclear Information System (INIS)

    Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Osman, Mohd Nizam

    2011-01-01

    A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

  4. High-performance noncontact thermal diode via asymmetric nanostructures

    Science.gov (United States)

    Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan

    2018-05-01

    Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.

  5. Pulsed corona generation using a diode-based pulsed power generator

    Science.gov (United States)

    Pemen, A. J. M.; Grekhov, I. V.; van Heesch, E. J. M.; Yan, K.; Nair, S. A.; Korotkov, S. V.

    2003-10-01

    Pulsed plasma techniques serve a wide range of unconventional processes, such as gas and water processing, hydrogen production, and nanotechnology. Extending research on promising applications, such as pulsed corona processing, depends to a great extent on the availability of reliable, efficient and repetitive high-voltage pulsed power technology. Heavy-duty opening switches are the most critical components in high-voltage pulsed power systems with inductive energy storage. At the Ioffe Institute, an unconventional switching mechanism has been found, based on the fast recovery process in a diode. This article discusses the application of such a "drift-step-recovery-diode" for pulsed corona plasma generation. The principle of the diode-based nanosecond high-voltage generator will be discussed. The generator will be coupled to a corona reactor via a transmission-line transformer. The advantages of this concept, such as easy voltage transformation, load matching, switch protection and easy coupling with a dc bias voltage, will be discussed. The developed circuit is tested at both a resistive load and various corona reactors. Methods to optimize the energy transfer to a corona reactor have been evaluated. The impedance matching between the pulse generator and corona reactor can be significantly improved by using a dc bias voltage. At good matching, the corona energy increases and less energy reflects back to the generator. Matching can also be slightly improved by increasing the temperature in the corona reactor. More effective is to reduce the reactor pressure.

  6. Photovoltaic power generation system free of bypass diodes

    Science.gov (United States)

    Lentine, Anthony L.; Okandan, Murat; Nielson, Gregory N.

    2015-07-28

    A photovoltaic power generation system that includes a solar panel that is free of bypass diodes is described herein. The solar panel includes a plurality of photovoltaic sub-modules, wherein at least two of photovoltaic sub-modules in the plurality of photovoltaic sub-modules are electrically connected in parallel. A photovoltaic sub-module includes a plurality of groups of electrically connected photovoltaic cells, wherein at least two of the groups are electrically connected in series. A photovoltaic group includes a plurality of strings of photovoltaic cells, wherein a string of photovoltaic cells comprises a plurality of photovoltaic cells electrically connected in series. The strings of photovoltaic cells are electrically connected in parallel, and the photovoltaic cells are microsystem-enabled photovoltaic cells.

  7. Photovoltaic power generation system with photovoltaic cells as bypass diodes

    Science.gov (United States)

    Lentine, Anthony L.; Nielson, Gregory N.; Tauke-Pedretti, Anna; Cruz-Campa, Jose Luis; Okandan, Murat

    2017-11-28

    A photovoltaic power generation system that includes a solar panel is described herein. The solar panel includes a photovoltaic sub-module, which includes a group of microsystem enabled photovoltaic cells. The group includes a first string of photovoltaic cells, a second string of photovoltaic cells, and a differing photovoltaic cell. Photovoltaic cells in the first string are electrically connected in series, and photovoltaic cells in the second string are electrically connected in series. Further, the first string of photovoltaic cells, the second string of photovoltaic cells, and the differing photovoltaic cell are electrically connected in parallel. Moreover, the differing photovoltaic cell is used as a bypass diode for the first string of photovoltaic cells and the second string of photovoltaic cells.

  8. 2000W high beam quality diode laser for direct materials processing

    Science.gov (United States)

    Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Gao, Jing; Pan, Fei; Wang, Zhi-yong

    2011-11-01

    This article describes high beam quality and kilowatt-class diode laser system for direct materials processing, using optical design software ZEMAX® to simulate the diode laser optical path, including the beam shaping, collimation, coupling, focus, etc.. In the experiment, the diode laser stack of 808nm and the diode laser stack of 915nm were used for the wavelength coupling, which were built vertical stacks up to 16 bars. The threshold current of the stack is 6.4A, the operating current is 85A and the output power is 1280W. Through experiments, after collimating the diode laser beam with micro-lenses, the fast axis BPP of the stack is less than 60mm.mrad, and the slow-axis BPP of the stack is less than 75mm.mrad. After shaping the laser beam and improving the beam quality, the fast axis BPP of the stack is still 60mm.mrad, and the slow-axis BPP of the stack is less than 19mm.mrad. After wavelength coupling and focusing, ultimately the power of 2150W was obtained, focal spot size of 1.5mm * 1.2mm with focal length 300mm. The laser power density is 1.2×105W/cm2, and that can be used for metal remelting, alloying, cladding and welding. The total optical coupling conversion efficiency is 84%, and the total electrical - optical conversion efficiency is 50%.

  9. Diode-pumped high power 2.7 μm Er:Y2O3 ceramic laser at room temperature

    Science.gov (United States)

    Wang, Li; Huang, Haitao; Shen, Deyuan; Zhang, Jian; Chen, Hao; Tang, Dingyuan

    2017-09-01

    Investigation of room temperature laser performance of the polycrystalline Er:Y2O3 ceramic at 2.7 μm with respect to dopant concentrations was conducted. With 7 at.% Er3+ concentration Er:Y2O3 ceramic as laser gain medium, over 2.05 W of CW output power at 2.7 μm was generated with a slope efficiency of 11.1% with respect to the absorbed LD pump power. The prospects for improvement in lasing efficiency and output power are considered.

  10. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  11. High-brightness tapered laser diodes with photonic crystal structures

    Science.gov (United States)

    Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun

    2018-02-01

    Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.

  12. Tuning range and output power optimization of an external-cavity GaN diode laser at 455 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-01-01

    In this paper we discuss how different feedback gratings affect the tuning range and the output power of external feedback diode laser systems. A tunable high-power narrow-spectrum external-cavity diode laser system around 455 nm is investigated. The laser system is based on a high-power GaN diode...... laser in a Littrow external-cavity. Both a holographic diffraction grating and a ruled diffraction grating are used as feedback elements in the external cavity. The output power, spectral bandwidth, and tunable range of the external cavity diode laser system are measured and compared with the two...... gratings at different injected currents. When the holographic grating is used, the laser system can be tuned over a range of 1.4 nm with an output power around 530 mW. When the ruled grating is used, the laser system can be tuned over a range of 6.0 nm with an output power around 80 mW. The results can...

  13. High-power diode-pumped Nd:Lu2O3 crystal continuous-wave thin-disk laser at 1359 nm

    International Nuclear Information System (INIS)

    Li, J H; Liu, X H; Wu, J B; Zhang, X; Li, Y L

    2012-01-01

    We present for the first time, to the best of our knowledge, a 1359 nm continuous-wave (CW) Nd:Lu 2 O 3 laser based on the 4 F 5/2 – 4 F 13/2 transition. The use of a pump module with 16 passes through the crystal allowed the realization of a Nd:Lu 2 O 3 thin-disk laser with 3.52 W of CW output power. The slope efficiency with respect to the incident pump power was 21.4%, and the fluctuation of the output power was better than 3.55% in the given 2 hour. The beam quality factor M 2 is 1.14 and 1.18 for tangential direction and sagittal direction, respectively

  14. Highly efficient greenish-blue platinum-based phosphorescent organic light-emitting diodes on a high triplet energy platform

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.; Lu, Z. H., E-mail: zhenghong.lu@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4 (Canada); Wang, X.; Wang, S., E-mail: wangs@chem.queensu.ca [Department of Chemistry, Queen' s University, 90 Bader Lane, Kingston, Ontario K7L 3N6 (Canada); Yang, C. [Department of Chemistry, Wuhan University, Wuhan 430072 (China)

    2014-04-28

    We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

  15. A highly selective and self-powered gas sensor via organic surface functionalization of p-Si/n-ZnO diodes.

    Science.gov (United States)

    Hoffmann, Martin W G; Mayrhofer, Leonhard; Casals, Olga; Caccamo, Lorenzo; Hernandez-Ramirez, Francisco; Lilienkamp, Gerhard; Daum, Winfried; Moseler, Michael; Waag, Andreas; Shen, Hao; Prades, J Daniel

    2014-12-17

    Selectivity and low power consumption are major challenges in the development of sophisticated gas sensor devices. A sensor system is presented that unifies selective sensor-gas interactions and energy-harvesting properties, using defined organic-inorganic hybrid materials. Simulations of chemical-binding interactions and the consequent electronic surface modulation give more insight into the complex sensing mechanism of selective gas detection. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. High power laser exciter accelerators

    International Nuclear Information System (INIS)

    Martin, T.H.

    1975-01-01

    Recent developments in untriggered oil and water switching now permit the construction of compact, high energy density pulsed power sources for laser excitation. These accelerators, developed principally for electron beam fusion studies, appear adaptable to laser excitation and will provide electron beams of 10 13 to 10 14 W in the next several years. The accelerators proposed for e-beam fusion essentially concentrate the available power from the outside edge of a disk into the central region where the electron beam is formed. One of the main problem areas, that of power flow at the vacuum diode insulator, is greatly alleviated by the multiplicity of electron beams that are allowable for laser excitation. A proposal is made whereby the disk-shaped pulsed power sections are stacked vertically to form a series of radially flowing electron beams to excite the laser gas volume. (auth)

  17. High efficient white organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, Stefan; Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Schmid, Guenter; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany)

    2007-07-01

    Due to the rapid progress in the last years the performance of organic light emitting diodes (OLEDs) has reached a level where general lighting presents a most interesting application target. We demonstrate, how the color coordinates of the emission spectrum can be adjusted using a combinatorial evaporation tool to lie on the desired black body curve representing cold and warm white, respectively. The evaluation includes phosphorescent and fluorescent dye approaches to optimize lifetime and efficiency, simultaneously. Detailed results are presented with respect to variation of layer thicknesses and dopant concentrations of each layer within the OLED stack. The most promising approach contains phosphorescent red and green dyes combined with a fluorescent blue one as blue phosphorescent dopants are not yet stable enough to achieve long lifetimes.

  18. Extraction of diode parameters of silicon solar cells under high illumination conditions

    International Nuclear Information System (INIS)

    Khan, Firoz; Baek, Seong-Ho; Park, Yiseul; Kim, Jae Hyun

    2013-01-01

    Graphical abstract: We have developed an analytical method to determine the diode parameters of concentrator solar cells under high illumination conditions. The determined values of diode parameters have been used to compute the theoretical values of performance parameters. The computed values of the open circuit voltage, curve factor, and efficiency obtained using diode parameters determined with this method showed good agreement (<2% discrepancy) with their experimental values in the temperature range 298–323 K. Highlights: • An analytical method to extract the diode parameters of concentrated Si solar cells. • This method uses single I–V curve under high illumination conditions. • The theoretical values of performance parameters have been computed. • Theoretical values of parameters matched within 2% discrepancy limit. • This method gives best results among the methods used in this work. - Abstract: An analytical method has been developed to extract all four diode parameters, namely the shunt resistance, series resistance, diode ideality factor, and reverse saturation current density, using a single J–V curve, based on one exponential model of silicon solar cells under high illumination conditions. The slope of the J–V curve (dV/dJ) at a short circuit condition is used to determine the value of the shunt resistance. The slope of the J–V curve at an open circuit condition together with the short circuit current density, open circuit voltage, current density, and voltage at maximum power point have been used to determine the values of the series resistance, diode ideality factor, and reverse saturation current density. The determined values of the diode parameters have been used to compute the theoretical values of the open circuit voltage, curve factor, and efficiency of the solar cell. The theoretical J–V curves matched well with the corresponding experimental curves. This method is applied to determine the diode parameters of concentrator

  19. High efficiency electrophosphorescence from bilayer organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Li Minghang; Lin, Ming-Te; Shepherd, Nigel D [Department of Material Science and Engineering, University of North Texas, Denton, TX (United States); Chen, Wei-Hsuan; Oswald, Iain; Omary, Mohammad [Department of Chemeistry, University of North Texas, Denton, TX (United States)

    2011-09-14

    An electron mobility of 2.7 x 10{sup -5} cm{sup 2} V{sup -1} s{sup -1} was measured for the phosphorescent emitter bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II)(Pt(ptp)2), which prompted its evaluation as both the emissive layer and electron transport layer in organic light emitting diodes with a simple bilayer structure. Power and external quantum efficiencies of 54.0 {+-} 0.2 lm W{sup -1} and 15.9% were obtained, which as far as we could ascertain are amongst the highest reported values for bilayer devices. We ascribe the high device efficiency to the combination of the high electron mobility, short excited-state lifetime (117 ns) and high luminescence quantum yield (60%) of the bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II). The colour temperature of the devices was 2855 K at 5 V, which places the emission in the 'warm' light spectral region.

  20. Preliminary Demonstration of Power Beaming With Non-Coherent Laser Diode Arrays

    National Research Council Canada - National Science Library

    Kare, Jordin

    1999-01-01

    A preliminary demonstration of free-space electric power transmission has been conducted using non-coherent laser diode arrays as the transmitter and standard silicon photovoltaic cell arrays as the receiver...

  1. Optical phase dynamics in mutually coupled diode laser systems exhibiting power synchronization

    International Nuclear Information System (INIS)

    Pal, Vishwa; Ghosh, R; Prasad, Awadhesh

    2011-01-01

    We probe the physical mechanism behind the known phenomenon of power synchronization of two diode lasers that are mutually coupled via their delayed optical fields. In a diode laser, the amplitude and the phase of the optical field are coupled by the so-called linewidth enhancement factor, α. In this work, we explore the role of optical phases of the electric fields in amplitude (and hence power) synchronization through α in such mutually delay-coupled diode laser systems. Our numerical results show that the synchronization of optical phases drives the powers of lasers to synchronized death regimes. We also find that as α varies for different diode lasers, the system goes through a sequence of in-phase amplitude-death states. Within the windows between successive amplitude-death regions, the cross-correlation between the field amplitudes exhibits a universal power-law behaviour with respect to α.

  2. Velocity spread of REB generated by high current diode

    International Nuclear Information System (INIS)

    Vrba, P.

    1994-05-01

    A theoretical analysis and numerical simulations of the Relativistic Electron Beam (REB) generation in a high current diode immersed in an external magnetic field were performed. The calculations confirmed the generated beam to be homogeneous and monoenergetic in a broad central region. In the case of a cylindrical diode the mixing of electron trajectories was only observed in a narrow peripheral beam region. The angle between particle trajectories and the external longitudinal magnetic field varies chaotically form 0 to -25 deg. This phenomenon suppresses the excitation of the two-stream instability excited by REB in a plasma column. (author) 2 tabs., 12 figs., 7 refs

  3. Pulse power applications of silicon diodes in EML capacitive pulsers

    Science.gov (United States)

    Dethlefsen, Rolf; McNab, Ian; Dobbie, Clyde; Bernhardt, Tom; Puterbaugh, Robert; Levine, Frank; Coradeschi, Tom; Rinaldi, Vito

    1993-01-01

    Crowbar diodes are used for increasing the energy transfer from capacitive pulse forming networks. They also prevent voltage reversal on the energy storage capacitors. 52 mm diameter diodes with a 5 kV reverse blocking voltage, rated 40 kA were successfully used for the 32 MJ SSG rail gun. An uprated diode with increased current capability and a 15 kV reverse blocking voltage has been developed. Transient thermal analysis has predicted the current ratings for different pulse length. Analysis verification is obtained from destructive testing.

  4. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

    Directory of Open Access Journals (Sweden)

    Abdul Manaf Hashim

    2011-08-01

    Full Text Available A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT structure. Current-voltage (I-V measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

  5. Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

    Science.gov (United States)

    Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

    2011-01-01

    A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

  6. High-power planar dielectric waveguide lasers

    International Nuclear Information System (INIS)

    Shepherd, D.P.; Hettrick, S.J.; Li, C.; Mackenzie, J.I.; Beach, R.J.; Mitchell, S.C.; Meissner, H.E.

    2001-01-01

    The advantages and potential hazards of using a planar waveguide as the host in a high-power diode-pumped laser system are described. The techniques discussed include the use of proximity-coupled diodes, double-clad waveguides, unstable resonators, tapers, and integrated passive Q switches. Laser devices are described based on Yb 3+ -, Nd 3+ -, and Tm 3+ -doped YAG, and monolithic and highly compact waveguide lasers with outputs greater than 10 W are demonstrated. The prospects for scaling to the 100 W level and for further integration of devices for added functionality in a monolithic laser system are discussed. (author)

  7. Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

    Science.gov (United States)

    Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

    2018-05-01

    We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

  8. 980 nm high brightness external cavity broad area diode laser bar

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

    2009-01-01

    We demonstrate of-axis spectral beam combining applied to a 980 nm high power broad area diode laser bar. The experiments yielded 9 W of optical power at 30 A of operating current and the measured M2 values of the combined beam from 12 emitters were 1.9 and 6.4 for the fast and the slow axis......, respectively. The slow axis beam quality was 5-6 times better than the value obtained from a single emitter in free running mode. A high brightness of 79 MW/cm2-str was achieved using this configuration. To our knowledge, this is the highest brightness level ever achieved from a broad area diode laser bar....

  9. Electro-thermal analysis and optimisation of edge termination of power diode supported by 2-D/3-D numerical modelling and simulation

    International Nuclear Information System (INIS)

    Príbytný, P; Donoval, D; Chvála, A; Marek, J; Molnár, M

    2014-01-01

    Numerical modelling and simulation provide an efficient tool for analysis and optimization of device structure design. In this paper we present the analysis and the geometry optimization of the power module with high power pin diode structure supported by the advanced 2-D/3-D mixed-mode electro-thermal device simulation. The structure under investigation is P + NN + power diode device designed for high reverse voltages and very high forward currents, with a maximum forward surge current up to 2.7 kA.

  10. Improved power efficiency of blue fluorescent organic light-emitting diode with intermixed host structure

    Energy Technology Data Exchange (ETDEWEB)

    Yue, Shouzhen; Zhang, Shiming; Zhang, Zhensong; Wu, Yukun; Wang, Peng; Guo, Runda; Chen, Yu; Qu, Dalong; Wu, Qingyang; Zhao, Yi, E-mail: yizhao@jlu.edu.cn; Liu, Shiyong

    2013-11-15

    High power efficiency (PE) p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-ph) based fluorescent blue organic light-emitting diode (OLED) is demonstrated by utilizing intermixed host (IH) structure. The PE outperforms those devices based on single host (SH), mixed host (MH), and double emitting layers (DELs). By further optimizing the intermixed layer, peak PE of the IH device is increased up to 8.7 lm/W (1.7 times higher than conventional SH device), which is the highest value among the DSA-ph based blue device reported so far. -- Highlights: • DSA-ph based blue fluorescent OLEDs are fabricated. • The intermixed host structure is first introduced into the blue devices. • Blue device with the highest power efficiency based on DSA-ph is obtained.

  11. Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

    Science.gov (United States)

    Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

    2015-11-16

    We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

  12. A New Resonant Capacitor Diode Voltage Multiplier Topology for Pulsed Power Application

    Directory of Open Access Journals (Sweden)

    Mohammad Kebriaei

    2017-09-01

    Full Text Available Today, the pulsed power systems have been employed in many applications. To meet the requirement of user, the pulse generator should enjoy the advantages of compactness, high flexibility, high pulse repetition rate and cost efficiency. Among all of converters that can be used to generate high voltage pulses, capacitance diode voltage multiplier (CDVM is a good candidate to meet the mentioned requirements. In this paper a new converter that is combination of full-bridge inverter, CDVM and resonant circuit is proposed. The performance of developed converter is compared with the conventional circuits and is demonstrated via simulation in MATLAB/SIMULINK. Experimental tests on a prototype setup have verified the capability of this topology.

  13. Analysis of diodes used as precision power detectors above the square law region

    DEFF Research Database (Denmark)

    Guldbrandsen, Tom

    1990-01-01

    The deviation from square law found in diode power detectors at moderate power levels has been modeled for a general system consisting of a number of diode detectors connected to a common arbitrary linear passive network, containing an approximately sinusoidal source. This situation covers the case...... if an extra-set of measurements is made in situ. For precision measurements the maximum power level can be increased by about 10 dB. The dynamic range can thus be increased sufficiently to enable fast measurements to be made with an accuracy of 10-3 dB...

  14. Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

    Science.gov (United States)

    Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

    2012-09-01

    We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

  15. Analytical study on discrete model of virtual cathode in a high-current diode

    International Nuclear Information System (INIS)

    Privezentsev, A.P.

    1988-01-01

    Interest in investigation of virtual cathode dynamics related to the development of high-current accelerator equipment is caused by the possibility of its application for ion collective acceleration in direct high-current electron beams and generation of power electromagnetic radiation. The Hamiltonian form of a plane sheet model for a high-current flux in a plane diode is investigated. Variables used permit to carry out the investigation of dynamics of the virtual cathode flux by the method of coordinate point transformations in a phase space. The necessity of numerical integration of sheet motion equations is dropped out in this case. Analytical solution of the suggested iterative circuit for total flux passage is presented as an example. The solution obtained is equivalent to the known results of the plane diode theory, obtained in the hydrodynamic approximation

  16. Thermally stimulated current method applied to highly irradiated silicon diodes

    CERN Document Server

    Pintilie, I; Pintilie, I; Moll, Michael; Fretwurst, E; Lindström, G

    2002-01-01

    We propose an improved method for the analysis of Thermally Stimulated Currents (TSC) measured on highly irradiated silicon diodes. The proposed TSC formula for the evaluation of a set of TSC spectra obtained with different reverse biases leads not only to the concentration of electron and hole traps visible in the spectra but also gives an estimation for the concentration of defects which not give rise to a peak in the 30-220 K TSC temperature range (very shallow or very deep levels). The method is applied to a diode irradiated with a neutron fluence of phi sub n =1.82x10 sup 1 sup 3 n/cm sup 2.

  17. High speed visible light communication using blue GaN laser diodes

    Science.gov (United States)

    Watson, S.; Viola, S.; Giuliano, G.; Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Targowski, G.; Watson, M. A.; White, H.; Rowe, D.; Laycock, L.; Kelly, A. E.

    2016-10-01

    GaN-based laser diodes have been developed over the last 20 years making them desirable for many security and defence applications, in particular, free space laser communications. Unlike their LED counterparts, laser diodes are not limited by their carrier lifetime which makes them attractive for high speed communication, whether in free space, through fiber or underwater. Gigabit data transmission can be achieved in free space by modulating the visible light from the laser with a pseudo-random bit sequence (PRBS), with recent results approaching 5 Gbit/s error free data transmission. By exploiting the low-loss in the blue part of the spectrum through water, data transmission experiments have also been conducted to show rates of 2.5 Gbit/s underwater. Different water types have been tested to monitor the effect of scattering and to see how this affects the overall transmission rate and distance. This is of great interest for communication with unmanned underwater vehicles (UUV) as the current method using acoustics is much slower and vulnerable to interception. These types of laser diodes can typically reach 50-100 mW of power which increases the length at which the data can be transmitted. This distance could be further improved by making use of high power laser arrays. Highly uniform GaN substrates with low defectivity allow individually addressable laser bars to be fabricated. This could ultimately increase optical power levels to 4 W for a 20-emitter array. Overall, the development of GaN laser diodes will play an important part in free space optical communications and will be vital in the advancement of security and defence applications.

  18. Coaxial foilless diode

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

    2014-05-15

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  19. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  20. ICAN: High power neutral beam generation

    International Nuclear Information System (INIS)

    Moustaizis, S.D.; Lalousis, P.; Perrakis, K.; Auvray, P.; Larour, J.; Ducret, J.E.; Balcou, P.

    2015-01-01

    During the last few years there is an increasing interest on the development of alternative high power new negative ion source for Tokamak applications. The proposed new neutral beam device presents a number of advantages with respect to: the density current, the acceleration voltage, the relative compact dimension of the negative ion source, and the coupling of a high power laser beam for photo-neutralization of the negative ion beam. Here we numerically investigate, using a multi- fluid 1-D code, the acceleration and the extraction of high power ion beam from a Magnetically Insulated Diode (MID). The diode configuration will be coupled to a high power device capable of extracting a current up to a few kA with an accelerating voltage up to MeV. An efficiency of up to 92% of the coupling of the laser beam, is required in order to obtain a high power, up to GW, neutral beam. The new high energy, high average power, high efficiency (up to 30%) ICAN fiber laser is proposed for both the plasma generation and the photo-neutralizer configuration. (authors)

  1. Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

    Science.gov (United States)

    Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

    2003-06-01

    High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

  2. Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

    Science.gov (United States)

    Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

    2014-05-01

    Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

  3. Highly modular high-brightness diode laser system design for a wide application range

    Science.gov (United States)

    Fritsche, Haro; Kruschke, Bastian; Koch, Ralf; Ferrario, Fabio; Kern, Holger; Pahl, Ullrich; Ehm, Einar; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang

    2015-03-01

    For an economic production it is important to serve as many applications as possible while keeping the product variations minimal. We present our modular laser design, which is based on single emitters and various combining technics. In a first step we accept a reduction of the very high brightness of the single emitters by vertical stacking. Those emitters can be wavelength stabilized by an external resonator, providing the very same feedback to each of those laser diodes which leads to an output power of about 100W with BPP of BPP. These "500W building blocks" are consequently designed in a way that without any system change new wavelengths can be implemented by only exchanging parts but without change of the production process. This design principal offers the option to adapt the wavelength of those blocks to any applications, from UV, visible into the far IR. From laser pumping and scientific applications to materials processing such as cutting and welding of copper aluminum or steel and also medical application. Operating at wavelengths between 900 nm and 1100 nm, these systems are mainly used in cutting and welding, but the technology can also be adapted to other wavelength ranges, such as 793 nm and 1530 nm. Around 1.5 μm the diodes are already successfully used for resonant pumping of Erbium lasers.[1] Furthermore, the fully integrated electronic concept allows addressing further applications, as it is capable of very short μs pulses up to cw mode operation by simple software commands.

  4. Effects of uneven temperature of IGBT and diode on switching characteristics of bridge legs in MW-level power converters

    DEFF Research Database (Denmark)

    Luo, Haoze; Iannuzzo, Francesco; Blaabjerg, Frede

    2016-01-01

    profile, the junction temperatures of inspected IGBT and related commutation diode are controlled independently using off-line test platform. In consideration of the structural layout, parasitic parameter effects and independent junction temperature control, a high-power switching characteristics platform...... was built. High power compact IGBT modules with 1.7kV rating and 3.6kA current rating are used for the experimental evaluation and platform feasibility. The quantitative analyses of uneven temperature effects on the switching characteristics are investigated and experimentally validated....

  5. Manufacturing polymer light emitting diode with high luminance efficiency by solution process

    Science.gov (United States)

    Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

    2012-06-01

    While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

  6. Online Vce measurement method for wear-out monitoring of high power IGBT modules

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Ghimire, Pramod; de Vega, Angel Ruiz

    2013-01-01

    A simple Vce online monitoring circuit is presented in this paper. It allows an accurate wear out prediction of IGBT modules, in high-power applications, during normal converter operation. Bipolar measurement allows monitoring of both IGBT and antiparallel diode. The circuit uses two serial...... offset due to diodes' forward voltage temperature dependency. Using four diodes one can monitor voltages on all power devices in a converter leg....

  7. Development of X-ray diode with high performance

    International Nuclear Information System (INIS)

    Hou Lifei; Yang Gouhong; Liu Shenye; Wei Minxi; Yi Tao; Jiang Shao'en; Sun Kexu

    2011-01-01

    A new type of X-ray diode (XRD-II) with ultrafast response time was developed. XRD-II detector was improved on the basis of old XRD (XRD-I), and its performances were studied on the 8 ps laser facility. The results show that XRD-II has excellent high-Jantage tolerance (to 6 kV) and super-fast response time (rise time is about 40 ps, and full width at half maximum (FWHM) is about 80 ps when bias Jantage is 5 kV). The detector calibration was carried out on Beijing synchrotron radiation facility, which shows that the detector's sensitivity has not deteriorated. (authors)

  8. Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

    International Nuclear Information System (INIS)

    Lagov, P B; Drenin, A S; Zinoviev, M A

    2017-01-01

    Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

  9. Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

    Science.gov (United States)

    Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

    2017-05-01

    Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

  10. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

    Science.gov (United States)

    Grandusky, James R.; Chen, Jianfeng; Gibb, Shawn R.; Mendrick, Mark C.; Moe, Craig G.; Rodak, Lee; Garrett, Gregory A.; Wraback, Michael; Schowalter, Leo J.

    2013-03-01

    In this letter, the achievement of over 60 mW output power from pseudomorphic ultraviolet light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.

  11. Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques

    International Nuclear Information System (INIS)

    Hazdra, P.; Vobecky, J.; Brand, K.

    2002-01-01

    Application of radiation defects for adjustment of power diode parameters is demonstrated. Local lifetime control (LLC) by proton and alpha-particle irradiation with energies 1.8-12.1 MeV is compared with uniform lifetime killing by 4.5 MeV electrons. The influence of both the techniques on static and dynamic parameters of modified diodes is experimentally established and explained by means of state-of-the-art simulation system. Optimization means and limits of lifetime control by irradiation techniques are discussed, as well

  12. Overview of catastrophic failures of freewheeling diodes in power electronic circuits

    DEFF Research Database (Denmark)

    Wu, Rui; Blaabjerg, Frede; Wang, Huai

    2013-01-01

    Emerging applications (e.g. electric vehicles, renewable energy systems, more electric aircrafts, etc.) have brought more stringent reliability constrains into power electronic products because of safety requirements and maintenance cost issues. To improve the reliability of power electronics......, better understanding of failure modes and failure mechanisms of reliability–critical components in power electronic circuits are needed. Many efforts have been devoted to the reduction of IGBT failures, while the study on the failures of freewheeling diodes is less impressive. It is of importance...... to investigate the catastrophic failures of freewheeling diodes as they could induce the malfunction of other components and eventually the whole power electronic circuits. This paper presents an overview of those catastrophic failures and gives examples of the corresponding consequences to the circuits....

  13. Venous Lake of the Lips Treated Using Photocoagulation with High-Intensity Diode Laser

    Science.gov (United States)

    Galletta, Vivian C.; de Paula Eduardo, Carlos; Migliari, Dante A.

    2010-01-01

    Abstract Objective: To evaluate the effectiveness of photocoagulation with high-intensity diode laser in the treatment of venous lake (VL) lesions. Background Data: VL is a common vascular lesion characterized by elevated, usually dome-shaped papules, ranging in color from dark blue to dark purple, seen more frequently in elderly patients. They often occur as single lesions on the ears, face, lips, or neck. Once formed, lesions persist throughout life. Although these lesions are usually asymptomatic, they can bleed if injured. Methods: Seventeen patients (7 men and 10 women) with VL on the lip were treated using a noncontact diode laser (wavelength 808 nm, power output 2–3 W in continuous wave). Results: After only one irradiation exposure, all lesions were successfully treated. Healing was completed in approximately 2 to 3 weeks, and none of the patients experienced complications. Postoperative discomfort and scarring were not present or were minimal. Conclusion: Photocoagulation with high-intensity diode laser is an effective, bloodless procedure for the treatment of VL. PMID:19811083

  14. High-efficiency, 154  W CW, diode-pumped Raman fiber laser with brightness enhancement.

    Science.gov (United States)

    Glick, Yaakov; Fromzel, Viktor; Zhang, Jun; Ter-Gabrielyan, Nikolay; Dubinskii, Mark

    2017-01-20

    We demonstrate a high-power, high-efficiency Raman fiber laser pumped directly by laser diode modules at 978 nm. 154 W of CW power were obtained at a wavelength of 1023 nm with an optical to optical efficiency of 65%. A commercial graded-index (GRIN) core fiber acts as the Raman fiber in a power oscillator configuration, which includes spectral selection to prevent generation of the second Stokes. In addition, brightness enhancement of the pump beam by a factor of 8.4 is attained due to the Raman gain distribution profile in the GRIN fiber. To the best of our knowledge this is the highest power and highest efficiency Raman fiber laser demonstrated in any configuration allowing brightness enhancement (i.e., in either cladding-pumped configuration or with GRIN fibers, excluding step-index core pumped), regardless of pumping scheme (i.e., either diode pumped or fiber laser pumped).

  15. In vitro study of 960 nm high power diode laser applications in dental enamel, aided by the presence of a photoinitiator dye: scanning electron microscopy analysis; Estudo in vitro das aplicacoes do laser de diodo de alta potencia 960 nm em esmalte dentario, assistido por um fotoiniciador: analise de microscopia eletronica de varredura

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Marcelo Vinicius de

    2002-06-15

    The objective of this study is to verify if a high power diode laser can effectively modify the morphology of an enamel surface, and if this can be done in a controlled fashion by changing the lasers parameters. Previous studies using SEM demonstrated that through irradiation with Nd:YAG laser (1064 nm) it is possible to modify the morphology of the dental surface in such way as to increase its resistance against caries decays. The desired procedures that should achieve a decrease of the index of caries decays and of its sequels are on a primary level, which means that action is necessary before the disease installs itself. In this study it was used for the first time a prototype of a high power diode laser operating at 960 nm, produced by the Laboratory of Development of Lasers of the Center for Lasers and Applications of the IPEN. This equipment can present several advantages as reliability, reduced size and low cost. The aim was establish parameters of laser irradiation that produce the desired effects wanted in the enamel and protocols that guarantee its safety during application in dental hard tissues, protecting it of heating effects such as fissures and carbonization. (author)

  16. High-temperature current conduction through three kinds of Schottky diodes

    International Nuclear Information System (INIS)

    Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

    2009-01-01

    Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

    Directory of Open Access Journals (Sweden)

    Alex Hayat

    2012-12-01

    Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

  18. Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016

    Science.gov (United States)

    2016-12-01

    ARL-TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky...TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk...Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016 5a. CONTRACT NUMBER 5b. GRANT NUMBER

  19. CSTI High Capacity Power

    International Nuclear Information System (INIS)

    Winter, J.M.

    1989-01-01

    The SP-100 program was established in 1983 by DOD, DOE, and NASA as a joint program to develop the technology necessary for space nuclear power systems for military and civil application. During FY-86 and 87, the NASA SP-100 Advanced Technology Program was devised to maintain the momentum of promising technology advancement efforts started during Phase 1 of SP-100 and to strengthen, in key areas, the chances for successful development and growth capability of space nuclear reactor power systems for future space applications. In FY-88, the Advanced Technology Program was incorporated into NASA's new Civil Space Technology Initiative (CSTI). The CSTI Program was established to provide the foundation for technology development in automation and robotics, information, propulsion, and power. The CSTI High Capacity Power Program builds on the technology efforts of the SP-100 program, incorporates the previous NASA SP-100 Advanced Technology project, and provides a bridge to NASA Project Pathfinder. The elements of CSTI High Capacity Power development include Conversion Systems, Thermal Management, Power Management, System Diagnostics, and Environmental Interactions. Technology advancement in all areas, including materials, is required to assure the high reliability and 7 to 10 year lifetime demanded for future space nuclear power systems. The overall program will develop and demonstrate the technology base required to provide a wide range of modular power systems as well as allowing mission independence from solar and orbital attitude requirements. Several recent advancements in CSTI High Capacity power development will be discussed

  20. Ion production and bipolar fluxes in a high-current plasma-filled diode

    International Nuclear Information System (INIS)

    Ivanenkov, G.V.

    1982-01-01

    The model and the evolution of behaviour of binary layers (BL) in expanding plasma of high current plasma-filled diode are described. The model estimates ion current and the laws of plasma expansion at the stage of BL intensive growth. The density range (10 12 -10 15 cm -3 ) is determined in which diode impedance growth takes place in connection with BL appearance. The density of ion current at the outlet of diode is 10 A/cm 2

  1. Development of a high and low impedance diode testing facility at AWE Aldermaston

    International Nuclear Information System (INIS)

    Sinclair, M.; Aedy, Ch.; Cooper, G.

    2005-01-01

    To meet the future resolution targets for radiography of hydrodynamic experiments is creating a dedicated Diode Research Facility. To perform low impedance diode research, the X-ray simulator Eros has been acquired. To drive the high impedance diodes the EMU machine will be co-located with Eros. The co-located of machines will facilitate the sharing of plasma and X-ray diagnostics [ru

  2. High power VCSELs for miniature optical sensors

    Science.gov (United States)

    Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

    2010-02-01

    Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

  3. Design of two-terminal PNPN diode for high-density and high-speed memory applications

    International Nuclear Information System (INIS)

    Tong Xiaodong; Wu Hao; Liang Qingqing; Zhong Huicai; Zhu Huilong; Zhao Chao; Ye Tianchun

    2014-01-01

    A vertical two-terminal silicon PNPN diode is presented for use in a high-density memory cell. The device design for high-speed operations was studied with experiments and calibrated simulations, which proves that the proposed memory cell can be operated at nanosecond range. The static and dynamic power dissipations were also studied, which indicated the availability of the proposed memory cell for VLSI applications. Moreover, the memory cell is compatible with CMOS process, has little impact from process variation, and has good reliability. (semiconductor devices)

  4. Ultra-high current density thin-film Si diode

    Science.gov (United States)

    Wang, Qi [Littleton, CO

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  5. Study of the power supply topology with high stability for accelerator

    International Nuclear Information System (INIS)

    Wu Wei; Wang Yunfang; Wang Jiewei

    2005-01-01

    The requirements of the power supply for accelerator are analyzed. A few of topologies of the highly stabilized power supply are discussed. The types are listed: Auto-transformers-diode rectifier-transistor regulating current. Thyristor rectifier regulating voltage -transistor regulating current, Diode rectifier -DC-chopping. Thyristor rectifier regulating voltage -two-quadrant-chopping. The advantages and disadvantages of the topologies for power supply are discussed. The notice questions of the power supply designed for accelerator are analyzed. (authors)

  6. Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films

    Science.gov (United States)

    2013-01-01

    In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory. PMID:23634999

  7. Effect of different diode laser powers in photodynamic therapy

    CSIR Research Space (South Africa)

    Maduray, K

    2010-09-01

    Full Text Available ?, Radiation and Oncology 37, p 131-135. Fig. 2: The cell viability of fibroblast cells after photosensitization with 50 µg/ml of ZnTSPc and photoactivation using a light dose of 4.5 J/cm2 an emitting output power of 31.8 mW from a CW laser source. Fig...

  8. Design windows of laser fusion power plants and conceptual design of laser-diode pumped slab laser

    International Nuclear Information System (INIS)

    Kozaki, Y.; Eguchi, T.; Izawa, Y.

    1999-01-01

    An analysis of the design space available to laser fusion power plants has been carried out, in terms of design key parameters such as target gain, laser energy and laser repetition rate, the number of fusion react ion chambers, and plant size. The design windows of economically attractive laser fusion plants is identified with the constraints of key design parameters and the cost conditions. Especially, for achieving high repetition rate lasers, we have proposed and designed a diode-pumped solid-state laser driver which consists of water-cooled zig-zag path slab amplifiers. (author)

  9. Improving the reverse recovery of power MOSFET integral diodes by electron irradiation

    International Nuclear Information System (INIS)

    Baliga, B.J.; Walden, J.P.

    1983-01-01

    Using 3 MeV electron irradiation at room temperature it was found that the reverse recovery charge in the integral diode could be continuously reduced in a well controlled manner from over 500nC to less than 100nC without any significant increase in the forward voltage drop of the integral diode under typical operating peak currents. The reverse recovery time was also observed to decrease from 3 microseconds to less than 200 nsec when the radiation dose was increased from 0 to 16 Megarads. The damage produced in gate oxide of the MOSFET due to the electron radiation damage was found to cause an undesirable decrease in the gate threshold voltage. This resulted in excessive channel leakage current flow in the MOSFET at zero gate bias. It was found that this channel leakage current was substantially reduced by annealing the devices at 140 0 C without influencing the integral diode reverse recovery speed. Thus, the electron irradiation technique was found to be effective in controlling the integral diode reverse recovery characteristics without any degradation of the power MOSFET characteristics. (author)

  10. Organic Diode Rectifiers Based on a High-Performance Conjugated Polymer for a Near-Field Energy-Harvesting Circuit.

    Science.gov (United States)

    Higgins, Stuart G; Agostinelli, Tiziano; Markham, Steve; Whiteman, Robert; Sirringhaus, Henning

    2017-12-01

    Organic diodes manufactured on a plastic substrate capable of rectifying a high-frequency radio-frequency identification signal (13.56 MHz), with sufficient power to operate an interactive smart tag, are reported. A high-performance conjugated semiconductor (an indacenodithiophene-benzothiadiazole copolymer) is combined with a carefully optimized architecture to satisfy the electrical requirements for an organic-semiconductor-based logic chip. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Design and fabrication of metal-insulator-metal diode for high frequency applications

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2017-02-01

    Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

  12. Measuring Plasma Formation Field Strength and Current Loss in Pulsed Power Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Mark D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Patel, Sonal G. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Falcon, Ross Edward [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Cartwright, Keith [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Kiefer, Mark L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Cuneo, Michael E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Maron, Yitzhak [Weizmann Inst. of Science, Rehovot (Israel)

    2017-11-01

    This LDRD investigated plasma formation, field strength, and current loss in pulsed power diodes. In particular the Self-Magnetic Pinch (SMP) e-beam diode was studied on the RITS-6 accelerator. Magnetic fields of a few Tesla and electric fields of several MV/cm were measured using visible spectroscopy techniques. The magnetic field measurements were then used to determine the current distribution in the diode. This distribution showed that significant beam current extends radially beyond the few millimeter x-ray focal spot diameter. Additionally, shielding of the magnetic field due to dense electrode surface plasmas was observed, quantified, and found to be consistent with the calculated Spitzer resistivity. In addition to the work on RITS, measurements were also made on the Z-machine looking to quantify plasmas within the power flow regions. Measurements were taken in the post-hole convolute and final feed gap regions on Z. Dopants were applied to power flow surfaces and measured spectroscopically. These measurements gave species and density/temperature estimates. Preliminary B-field measurements in the load region were attempted as well. Finally, simulation work using the EMPHASIS, electromagnetic particle in cell code, was conducted using the Z MITL conditions. The purpose of these simulations was to investigate several surface plasma generations models under Z conditions for comparison with experimental data.

  13. High-power VCSELs for smart munitions

    Science.gov (United States)

    Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

    2006-08-01

    The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

  14. Testing of high current by-pass diodes for the LHC magnet quench protection

    International Nuclear Information System (INIS)

    Berland, V.; Hagedorn, D.; Rodriguez-Mateos, F.

    1996-01-01

    Within the framework of the Large Hadron Collider (LHC) R and D program, CERN is performing experiments to establish the current carrying capability of irradiated diodes at liquid Helium temperatures for the superconducting magnet protection. Even if the diodes are degraded by radiation dose and neutron fluence, they must be able to support the by-pass current during a magnet quench and the de-excitation of the superconducting magnet ring. During this discharge, the current in the diode reaches a maximum value up to 13 kA and decreased with an exponential time constant of 100 s. Two sets of 75 mm wafer diameter epitaxial diodes, one irradiated and one non-irradiated, were submitted to this experiment. The irradiated diodes have been exposed to radiation in the accelerator environment up to 20 kGy and then annealed at room temperature. After the radiation exposure the diodes had shown a degradation of forward voltage of 50% which reduced to about 14% after the thermal annealing. During the long duration high current tests, one of the diodes was destroyed and the other two irradiated diodes showed a different behavior compared with non-irradiated diodes

  15. Resonant High Power Combiners

    CERN Document Server

    Langlois, Michel; Peillex-Delphe, Guy

    2005-01-01

    Particle accelerators need radio frequency sources. Above 300 MHz, the amplifiers mostly used high power klystrons developed for this sole purpose. As for military equipment, users are drawn to buy "off the shelf" components rather than dedicated devices. IOTs have replaced most klystrons in TV transmitters and find their way in particle accelerators. They are less bulky, easier to replace, more efficient at reduced power. They are also far less powerful. What is the benefit of very compact sources if huge 3 dB couplers are needed to combine the power? To alleviate this drawback, we investigated a resonant combiner, operating in TM010 mode, able to combine 3 to 5 IOTs. Our IOTs being able to deliver 80 kW C.W. apiece, combined power would reach 400 kW minus the minor insertion loss. Values for matching and insertion loss are given. The behavior of the system in case of IOT failure is analyzed.

  16. Development of high performance Schottky barrier diode and its application to plasma diagnostics

    International Nuclear Information System (INIS)

    Fujita, Junji; Kawahata, Kazuo; Okajima, Shigeki

    1993-10-01

    At the conclusion of the Supporting Collaboration Research on 'Development of High Performance Detectors in the Far Infrared Range' carried out from FY1990 to FY1992, the results of developing Schottky barrier diode and its application to plasma diagnostics are summarized. Some remarks as well as technical know-how for the correct use of diodes are also described. (author)

  17. Operation of a high-purity silicon diode alpha particle detector at 1.4 K

    International Nuclear Information System (INIS)

    Martoff, C.J.; Kaczanowicz, E.; Neuhauser, B.J.; Lopez, E.; Zhang, Y.; Ziemba, F.P.

    1991-01-01

    Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm 2 by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.)

  18. High performance Schottky diodes based on indium-gallium-zinc-oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China)

    2016-07-15

    Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.

  19. High-power klystrons

    Science.gov (United States)

    Siambis, John G.; True, Richard B.; Symons, R. S.

    1994-05-01

    Novel emerging applications in advanced linear collider accelerators, ionospheric and atmospheric sensing and modification and a wide spectrum of industrial processing applications, have resulted in microwave tube requirements that call for further development of high power klystrons in the range from S-band to X-band. In the present paper we review recent progress in high power klystron development and discuss some of the issues and scaling laws for successful design. We also discuss recent progress in electron guns with potential grading electrodes for high voltage with short and long pulse operation via computer simulations obtained from the code DEMEOS, as well as preliminary experimental results. We present designs for high power beam collectors.

  20. Novel short-pulse laser diode source for high-resolution 3D flash lidar

    Science.gov (United States)

    Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

    2017-06-01

    Imaging based on laser illumination is present in various fields of applications such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified the recent years. Among the various technologies currently studied, automotive lidars are a fast-growing one due to their accuracy to detect a wide range of objects at distances up to a few hundreds of meters in various weather conditions. First commercialized devices for ADAS were laser scanners. Since then, new architectures have recently appeared such as solid-state lidar and flash lidar that offer a higher compactness, robustness and a cost reduction. Flash lidars are based on time-of-flight measurements, with the particularity that they do not require beam scanners because only one short laser pulse with a large divergence is used to enlighten the whole scene. Depth of encountered objects can then be recovered from measurement of echoed light at once, hence enabling real-time 3D mapping of the environment. This paper will bring into the picture a cutting edge laser diode source that can deliver millijoule pulses as short as 12 ns, which makes them highly suitable for integration in flash lidars. They provide a 100-kW peak power highly divergent beam in a footprint of 4x5 cm2 (including both the laser diode and driver) and with a 30-% electrical-to-optical efficiency, making them suitable for integration in environments in which compactness and power consumption are a priority. Their emission in the range of 800-1000 nm is considered to be eye safe when taking into account the high divergence of the output beam. An overview of architecture of these state-of-the-art pulsed laser diode sources will be given together with some solutions for their integration in 3D mapping systems. Future work leads will be discussed for miniaturization of the laser diode and drastic cost reduction.

  1. High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region

    KAUST Repository

    Khan, Mohammed Zahed Mustafa; Majid, Mohammed Abdul; Ng, Tien Khee; Ooi, Boon S.

    2013-01-01

    The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.

  2. Sliding Mode Pulsed Averaging IC Drivers for High Brightness Light Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Anatoly Shteynberg, PhD

    2006-08-17

    This project developed new Light Emitting Diode (LED) driver ICs associated with specific (uniquely operated) switching power supplies that optimize performance for High Brightness LEDs (HB-LEDs). The drivers utilize a digital control core with a newly developed nonlinear, hysteretic/sliding mode controller with mixed-signal processing. The drivers are flexible enough to allow both traditional microprocessor interface as well as other options such as “on the fly” adjustment of color and brightness. Some other unique features of the newly developed drivers include • AC Power Factor Correction; • High power efficiency; • Substantially fewer external components should be required, leading to substantial reduction of Bill of Materials (BOM). Thus, the LED drivers developed in this research : optimize LED performance by increasing power efficiency and power factor. Perhaps more remarkably, the LED drivers provide this improved performance at substantially reduced costs compared to the present LED power electronic driver circuits. Since one of the barriers to market penetration for HB-LEDs (in particular “white” light LEDs) is cost/lumen, this research makes important contributions in helping the advancement of SSL consumer acceptance and usage.

  3. Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

    International Nuclear Information System (INIS)

    Turner, G.W.; Choi, H.K.; Calawa, D.R.

    1994-01-01

    Recent advances in the performance of GaInAsSb/AlGaAsSb quantum-well diode lasers have been directly related to improvements in the quality of the molecular-beam epitaxy (MBE)-grown epitaxial layers. These improvements have been based on careful measurement and control of lattice matching and intentional strain, changes in shutter sequencing at interfaces, and a generally better understanding of the growth of Sb-based epitaxial materials. By using this improved MBE-grown material, significantly enhanced performance has been obtained for midinfrared lasers. These lasers, which are capable of ∼2-μm emission at room temperature, presently exhibit threshold current densities of 143 A/cm 2 , continuous wave powers of 1.3 W, and diffraction-limited powers of 120 mW. Such high-performance midinfrared diode lasers are of interest for a wide variety of applications, including eye-safe laser radar, remote sensing of atmospheric contaminants and wind turbulence, laser surgery, and pumping of solid-state laser media. 12 refs., 3 figs

  4. High power microwaves

    CERN Document Server

    Benford, James; Schamiloglu, Edl

    2016-01-01

    Following in the footsteps of its popular predecessors, High Power Microwaves, Third Edition continues to provide a wide-angle, integrated view of the field of high power microwaves (HPMs). This third edition includes significant updates in every chapter as well as a new chapter on beamless systems that covers nonlinear transmission lines. Written by an experimentalist, a theorist, and an applied theorist, respectively, the book offers complementary perspectives on different source types. The authors address: * How HPM relates historically and technically to the conventional microwave field * The possible applications for HPM and the key criteria that HPM devices have to meet in order to be applied * How high power sources work, including their performance capabilities and limitations * The broad fundamental issues to be addressed in the future for a wide variety of source types The book is accessible to several audiences. Researchers currently in the field can widen their understanding of HPM. Present or pot...

  5. High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

    KAUST Repository

    Shen, Chao; Ng, Tien Khee; Leonard, John T.; Pourhashemi, Arash; Oubei, Hassan M.; Alias, Mohd Sharizal; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S.

    2016-01-01

    To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

  6. High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

    KAUST Repository

    Shen, Chao

    2016-01-25

    To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

  7. High power RF oscillator with Marx generators

    International Nuclear Information System (INIS)

    Murase, Hiroshi; Hayashi, Izumi

    1980-01-01

    A method to maintain RF oscillation by using many Marx generators was proposed and studied experimentally. Many charging circuits were connected to an oscillator circuit, and successive pulsed charging was made. This successive charging amplified and maintained the RF oscillation. The use of vacuum gaps and high power silicon diodes improved the characteristics of RF current cut-off of the circuit. The efficiency of the pulsed charging from Marx generators to a condenser was theoretically investigated. The theoretical result showed the maximum efficiency of 0.98. The practical efficiency obtained by using a proposed circuit with a high power oscillator was in the range 0.50 to 0.56. The obtained effective output power of the RF pulses was 11 MW. The maximum holding time of the RF pulses was about 21 microsecond. (Kato, T.)

  8. Measurement of soft X-ray power from high-power Z-pinch plasma

    International Nuclear Information System (INIS)

    Wang Wensheng; Qiu Aici; Sun Fengrong; Luo Jianhui; Zhou Haisheng; He Duohui

    2003-01-01

    A Ni-film bolometer driven by the pulsed constant-voltage supply was developed for measuring soft X-ray energy under 1 keV generated from the Qiang-Guang-I, while the measuring system of the soft X-ray power was established with an X-ray diode detector. Results of the soft X-ray energy and power measurements were obtained at the experiment of Kr gas-puff high-power Z-pinch plasma

  9. Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

    Science.gov (United States)

    Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

    2018-05-01

    Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Exciplex-Forming Cohost for High Efficiency and High Stability Phosphorescent Organic Light-Emitting Diodes.

    Science.gov (United States)

    Shih, Chun-Jen; Lee, Chih-Chien; Chen, Ying-Hao; Biring, Sajal; Kumar, Gautham; Yeh, Tzu-Hung; Sen, Somaditya; Liu, Shun-Wei; Wong, Ken-Tsung

    2018-01-17

    An exciplex forming cohost system is employed to achieve a highly efficient organic light-emitting diode (OLED) with good electroluminescent lifetime. The exciplex is formed at the interfacial contact of a conventional star-shaped carbazole hole-transporting material, 4,4',4″-tris(N-carbazolyl)-triphenylamine (TCTA), and a triazine electron-transporting material, 2,4,6-tris[3-(1H-pyrazol-1-yl)phenyl]-1,3,5-triazine (3P-T2T). The excellent combination of TCTA and 3P-T2T is applied as the cohost of a common green phosphorescent emitter with almost zero energy loss. When Ir(ppy) 2 (acac) is dispersed in such exciplex cohost system, OLED device with maximum external quantum efficiency of 29.6%, the ultrahigh power efficiency of 147.3 lm/W, and current efficiency of 107 cd/A were successfully achieved. More importantly, the OLED device showed a low-efficiency roll-off and an operational lifetime (τ 80 ) of ∼1020 min with the initial brightness of 2000 cd/m 2 , which is 56 times longer than the reference device. The significant difference of device stability was attributed to the degradation of exciplex system for energy transfer process, which was investigated by the photoluminescence aging measurement at room temperature and 100 K, respectively.

  11. Vortex Diode Analysis and Testing for Fluoride Salt-Cooled High-Temperature Reactors

    International Nuclear Information System (INIS)

    Yoder, Graydon L. Jr.; Elkassabgi, Yousri M.; De Leon, Gerardo I.; Fetterly, Caitlin N.; Ramos, Jorge A.; Cunningham, Richard Burns

    2012-01-01

    Fluidic diodes are presently being considered for use in several fluoride salt-cooled high-temperature reactor designs. A fluidic diode is a passive device that acts as a leaky check valve. These devices are installed in emergency heat removal systems that are designed to passively remove reactor decay heat using natural circulation. The direct reactor auxiliary cooling system (DRACS) uses DRACS salt-to-salt heat exchangers (DHXs) that operate in a path parallel to the core flow. Because of this geometry, under normal operating conditions some flow bypasses the core and flows through the DHX. A flow diode, operating in reverse direction, is-used to minimize this flow when the primary coolant pumps are in operation, while allowing forward flow through the DHX under natural circulation conditions. The DRACSs reject the core decay heat to the environment under loss-of-flow accident conditions and as such are a reactor safety feature. Fluidic diodes have not previously been used in an operating reactor system, and therefore their characteristics must be quantified to ensure successful operation. This report parametrically examines multiple design parameters of a vortex-type fluidic diode to determine the size of diode needed to reject a particular amount of decay heat. Additional calculations were performed to size a scaled diode that could be tested in the Oak Ridge National Laboratory Liquid Salt Flow Loop. These parametric studies have shown that a 152.4 mm diode could be used as a test article in that facility. A design for this diode is developed, and changes to the loop that will be necessary to test the diode are discussed. Initial testing of a scaled flow diode has been carried out in a water loop. The 150 mm diode design discussed above was modified to improve performance, and the final design tested was a 171.45 mm diameter vortex diode. The results of this testing indicate that diodicities of about 20 can be obtained for diodes of this size. Experimental

  12. Electron Sources of the Diode Type with Cathode and Anode of High Temperature Superconductors

    International Nuclear Information System (INIS)

    Korenev, S.A.

    1994-01-01

    The planar electron sources of the diode type with cathode and anode of high temperature superconductors (HTSC) are considered. Explosive emission cathode on the basis of bismuth ceramics (Bi-Ca-Sr-Cu-O) allows forming microsecond pulse (duration > 1 μs) and low energy electron beams (10-25 keV). Tube anode of HTSC in superconducting phase compresses the pulsed electron beam (K = 2-8). It leads to an increase of the beam power density. The high voltage of the generator of Arkad'ev-Marx type (U = 100-600 kV) and the generator with double L C-line are used for experiments. The pulsed method of measuring of the HTSC critical current with the help of pulsed high current electron beam is described. (author). 16 refs., 13 figs

  13. Highly efficient deep-blue organic light emitting diode with a carbazole based fluorescent emitter

    Science.gov (United States)

    Sahoo, Snehasis; Dubey, Deepak Kumar; Singh, Meenu; Joseph, Vellaichamy; Thomas, K. R. Justin; Jou, Jwo-Huei

    2018-04-01

    High efficiency deep-blue emission is essential to realize energy-saving, high-quality display and lighting applications. We demonstrate here a deep-blue organic light emitting diode using a novel carbazole based fluorescent emitter 7-[4-(diphenylamino)phenyl]-9-(2-ethylhexyl)-9H-carbazole-2-carbonitrile (JV234). The solution processed resultant device shows a maximum luminance above 1,750 cd m-2 and CIE coordinates (0.15,0.06) with a 1.3 lm W-1 power efficiency, 2.0 cd A-1 current efficiency, and 4.1% external quantum efficiency at 100 cd m-2. The resulting deep-blue emission enables a greater than 100% color saturation. The high efficiency may be attributed to the effective host-to-guest energy transfer, suitable device architecture facilitating balanced carrier injection and low doping concentration preventing efficiency roll-off caused by concentration quenching.

  14. Investigation of Power Flow from a Plasma Opening Switch to an Electron Beam Diode

    National Research Council Canada - National Science Library

    Black, D

    1999-01-01

    ...) and an electron-beam (e-beam) diode load. The parameters that were varied independently in this set of experiments were the conduction time, the e-beam diode anode-cathode (A-K) gap (diode impedance...

  15. High voltage high brightness electron accelerators with MITL voltage adder coupled to foilless diodes

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poukey, J.W.; Frost, C.A.; Shope, S.L.; Halbleib, J.A.; Turman, B.N.

    1993-01-01

    During the last ten years the authors have extensively studied the physics and operation of magnetically-immersed electron foilless diodes. Most of these sources were utilized as injectors to high current, high energy linear induction accelerators such as those of the RADLAC family. Recently they have experimentally and theoretically demonstrated that foilless diodes can be successfully coupled to self-magnetically insulated transmission line voltage adders to produce very small high brightness, high definition (no halo) electron beams. The RADLAC/SMILE experience opened the path to a new approach in high brightness, high energy induction accelerators. There is no beam drifting through the device. The voltage addition occurs in a center conductor, and the beam is created at the high voltage end in an applied magnetic field diode. This work was motivated by the remarkable success of the HERMES-III accelerator and the need to produce small radius, high energy, high current electron beams for air propagation studies and flash x-ray radiography. In this paper they present experimental results compared with analytical and numerical simulations in addition to design examples of devices that can produce multikiloamp electron beams of as high as 100 MV energies and radii as small as 1 mm

  16. Low-confinement high-power semiconductor lasers

    NARCIS (Netherlands)

    Buda, M.

    1999-01-01

    This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

  17. High Power Factor Hybrid Rectifier | Odeh | Nigerian Journal of ...

    African Journals Online (AJOL)

    This paper presents the analysis of a new single-phase hybrid rectifier with high power factor (PF) and low harmonic distortion current. The proposed rectifier structure is composed of an ordinary single-phase diode rectifier with parallel connection of a switched converter. It is outlined that the switched converter is capable of ...

  18. Application of a High-Power Reversible Converter in a Hybrid Traction Power Supply System

    Directory of Open Access Journals (Sweden)

    Gang Zhang

    2017-03-01

    Full Text Available A high-power reversible converter can achieve a variety of functions, such as recovering regenerative braking energy, expanding traction power capacity, and improving an alternating current (AC grid power factor. A new hybrid traction power supply scheme, which consists of a high-power reversible converter and two 12-pulse diode rectifiers, is proposed. A droop control method based on load current feed-forward is adopted to realize the load distribution between the reversible converter and the existing 12-pulse diode rectifiers. The direct current (DC short-circuit characteristics of the reversible converter is studied, then the relationship between the peak fault current and the circuit parameters is obtained from theoretical calculations and validated by computer simulation. The first two sets of 2 MW reversible converters have been successfully applied in Beijing Metro Line 10, the proposed hybrid application scheme and coordinated control strategy are verified, and 11.15% of average energy-savings is reached.

  19. Switching power converters medium and high power

    CERN Document Server

    Neacsu, Dorin O

    2013-01-01

    An examination of all of the multidisciplinary aspects of medium- and high-power converter systems, including basic power electronics, digital control and hardware, sensors, analog preprocessing of signals, protection devices and fault management, and pulse-width-modulation (PWM) algorithms, Switching Power Converters: Medium and High Power, Second Edition discusses the actual use of industrial technology and its related subassemblies and components, covering facets of implementation otherwise overlooked by theoretical textbooks. The updated Second Edition contains many new figures, as well as

  20. INFLUENCE OF THE ORTHOGONALLY POLARIZED BACK REFLECTIONS ON THE POWER AND RADIATION SPECTRUM OF SUPERLUMINESCENT DIODES

    Directory of Open Access Journals (Sweden)

    A. B. Mukhtubayev

    2015-01-01

    Full Text Available We have investigated the back reflections influence on the spectrum for optical radiation source of superluminescent diode type and have provided optimal operating conditions of the radiation source. The feature of the research method is the usage of a fiber polarization controller and an optical mirror coated on the end of an optical fiber. The studies were conducted with two sources of optical radiation: ThorLabs superluminescent diode series S5FC1005SXL and LED module ELED-1550-1-E-9-SM1-FA-CW. It was revealed that at the value of back reflections equal to -13 dB relative to the output power source, a negative impact on power and spectral characteristics of the source with an optical power of 2.3 µW is beginning to appear. It was also confirmed that at the increase of the radiation power by increasing the source pumping current, back reflection influence is exhibiting at a lower level of back reflections. The results obtained need to be considered when designing fiber optic sensors in order to eliminate the effect of back reflections on the sources of optical radiation having been studied in this paper.

  1. Ultra-high brightness wavelength-stabilized kW-class fiber coupled diode laser

    Science.gov (United States)

    Huang, Robin K.; Chann, Bien; Glenn, John D.

    2011-03-01

    TeraDiode has produced a fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Further advances of these ultra-bright lasers are also projected.

  2. High power, repetitive stacked Blumlein pulse generators

    Energy Technology Data Exchange (ETDEWEB)

    Davanloo, F; Borovina, D L; Korioth, J L; Krause, R K; Collins, C B [Univ. of Texas at Dallas, Richardson, TX (United States). Center for Quantum Electronics; Agee, F J [US Air Force Phillips Lab., Kirtland AFB, NM (United States); Kingsley, L E [US Army CECOM, Ft. Monmouth, NJ (United States)

    1997-12-31

    The repetitive stacked Blumlein pulse power generators developed at the University of Texas at Dallas consist of several triaxial Blumleins stacked in series at one end. The lines are charged in parallel and synchronously commuted with a single switch at the other end. In this way, relatively low charging voltages are multiplied to give a high discharge voltage across an arbitrary load. Extensive characterization of these novel pulsers have been performed over the past few years. Results indicate that they are capable of producing high power waveforms with rise times and repetition rates in the range of 0.5-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap, or photoconductive switch. The progress in the development and use of stacked Blumlein pulse generators is reviewed. The technology and the characteristics of these novel pulsers driving flash x-ray diodes are discussed. (author). 4 figs., 5 refs.

  3. A fast automatic power control circuit for a small form-factor pluggable laser diode drive

    Energy Technology Data Exchange (ETDEWEB)

    Wang Huan; Wang Zhigong; Xu Jian; Miao Peng; Li Wei [Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China); Luo Yin; Yang Siyong, E-mail: wanghuan@seu.edu.c [Jiangsu Sino-Chip OE-IC Co. Ltd, Nanjing 210016 (China)

    2010-06-15

    A fast automatic power control (APC) circuit for a laser diode driver (LDD) has been implemented in a 0.6-{mu}m BiCMOS process. The APC circuit adopts double-loops and variable-bandwidth techniques to achieve a turn-on time of < 400 {mu}s for most kinds of TOSAs. Thus, it meets the small form-factor pluggable (SFP) agreement. Such techniques make a good tradeoff between stability, accuracy, turn-on time, noise and convenience. The measured results indicate that the APC circuit is suitable for SFP LDD. (semiconductor integrated circuits)

  4. High-resolution low-frequency fluctuation map of a multimode laser diode subject to filtered optical feedback via a fiber Bragg grating.

    Science.gov (United States)

    Baladi, Fadwa; Lee, Min Won; Burie, Jean-René; Bettiati, Mauro A; Boudrioua, Azzedine; Fischer, Alexis P A

    2016-07-01

    A highly detailed and extended map of low-frequency fluctuations is established for a high-power multi-mode 980 nm laser diode subject to filtered optical feedback from a fiber Bragg grating. The low-frequency fluctuations limits and substructures exhibit substantial differences with previous works.

  5. A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2018-01-01

    . This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

  6. Electron beam formation in high-current diode

    International Nuclear Information System (INIS)

    Korneev, S.A.

    1981-01-01

    The results of experimental investigation of the electron beam formation in diode with cathode on the base of incomplete discharge over the surface of dielectrics with dielectric penetration epsilon 2 . The measurement of current density distribution over transversal cross section reveals an efficient homogeneity [ru

  7. High-frequency high-voltage high-power DC-to-DC converters

    Science.gov (United States)

    Wilson, T. G.; Owen, H. A.; Wilson, P. M.

    1982-09-01

    A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

  8. High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth

    KAUST Repository

    Shen, Chao

    2016-08-25

    III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ∼9 nm at 20 mW optical power. Owing to the fast recombination (τ<0.35 ns) through the amplified spontaneous emission, the SLD exhibits a significantly large 3-dB bandwidth of 807 MHz. A data rate of 1.3 Gbps with a bit-error rate of 2.9 × 10 was obtained using on-off keying modulation scheme, suggesting the SLD being a high-speed transmitter for VLC applications.

  9. High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth

    KAUST Repository

    Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2016-01-01

    III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ∼9 nm at 20 mW optical power. Owing to the fast recombination (τ<0.35 ns) through the amplified spontaneous emission, the SLD exhibits a significantly large 3-dB bandwidth of 807 MHz. A data rate of 1.3 Gbps with a bit-error rate of 2.9 × 10 was obtained using on-off keying modulation scheme, suggesting the SLD being a high-speed transmitter for VLC applications.

  10. High polarization purity operation of 99% in 9xx-nm broad stripe laser diodes

    Science.gov (United States)

    Morohashi, Rintaro; Yamagata, Yuji; Kaifuchi, Yoshikazu; Tada, Katsuhisa; Nogawa, Ryozaburo; Yamada, Yumi; Yamaguchi, Masayuki

    2018-02-01

    Polarization characteristics of self-aligned stripe (SAS) laser diodes (LDs) and Ridge-LDs are investigated to realize highly efficient polarization beam combined (PBC) LD modules. Vertical layers of both lasers are designed identically. Near field patterns (NFP) of TM polarization for the Ridge-LD showed peaks at the side edges, as expected by the strain simulation. On the other hand, SAS-LD showed a relatively flat and weak profile. Polarization purity (ITE/ (ITE+ITM)) of SAS-LDs exceeds 99%, while those of the Ridge-LDs are as low as 96%. It is confirmed that our SAS-LDs are suitable sources for PBC with low power loss.

  11. Diode lasers and arrays

    International Nuclear Information System (INIS)

    Streifer, W.

    1988-01-01

    This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

  12. Simulation of electron and ion bipolar flow in high current diode with magnetic insulation

    International Nuclear Information System (INIS)

    Vrba, P.; Engelko, V.I.

    1990-08-01

    Numerical simulation of the formation of the collector ion flow in a magnetically insulated ion diode (MID) with a hollow cylindrical and cone-shaped cathode was studied. Such cathodes are often used for the production of tubular high current microsecond electron beams. The ions, emitted by the collector and born as a result of ionization of the residual gas by the electron beam, are focused into the cathode plasma region. This effect can adversely influence the diode operation

  13. Operation of a high-purity silicon diode alpha particle detector at 1. 4 K

    Energy Technology Data Exchange (ETDEWEB)

    Martoff, C.J.; Kaczanowicz, E. (Temple Univ., Philadelphia, PA (USA)); Neuhauser, B.J.; Lopez, E.; Zhang, Y. (San Francisco State Univ., CA (USA)); Ziemba, F.P. (Quantrad Corp. (USA))

    1991-03-01

    Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm{sup 2} by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.).

  14. High Power Density Motors

    Science.gov (United States)

    Kascak, Daniel J.

    2004-01-01

    With the growing concerns of global warming, the need for pollution-free vehicles is ever increasing. Pollution-free flight is one of NASA's goals for the 21" Century. , One method of approaching that goal is hydrogen-fueled aircraft that use fuel cells or turbo- generators to develop electric power that can drive electric motors that turn the aircraft's propulsive fans or propellers. Hydrogen fuel would likely be carried as a liquid, stored in tanks at its boiling point of 20.5 K (-422.5 F). Conventional electric motors, however, are far too heavy (for a given horsepower) to use on aircraft. Fortunately the liquid hydrogen fuel can provide essentially free refrigeration that can be used to cool the windings of motors before the hydrogen is used for fuel. Either High Temperature Superconductors (HTS) or high purity metals such as copper or aluminum may be used in the motor windings. Superconductors have essentially zero electrical resistance to steady current. The electrical resistance of high purity aluminum or copper near liquid hydrogen temperature can be l/lOO* or less of the room temperature resistance. These conductors could provide higher motor efficiency than normal room-temperature motors achieve. But much more importantly, these conductors can carry ten to a hundred times more current than copper conductors do in normal motors operating at room temperature. This is a consequence of the low electrical resistance and of good heat transfer coefficients in boiling LH2. Thus the conductors can produce higher magnetic field strengths and consequently higher motor torque and power. Designs, analysis and actual cryogenic motor tests show that such cryogenic motors could produce three or more times as much power per unit weight as turbine engines can, whereas conventional motors produce only 1/5 as much power per weight as turbine engines. This summer work has been done with Litz wire to maximize the current density. The current is limited by the amount of heat it

  15. High-power electronics

    CERN Document Server

    Kapitsa, Petr Leonidovich

    1966-01-01

    High-Power Electronics, Volume 2 presents the electronic processes in devices of the magnetron type and electromagnetic oscillations in different systems. This book explores the problems of electronic energetics.Organized into 11 chapters, this volume begins with an overview of the motion of electrons in a flat model of the magnetron, taking into account the in-phase wave and the reverse wave. This text then examines the processes of transmission of electromagnetic waves of various polarization and the wave reflection from grids made of periodically distributed infinite metal conductors. Other

  16. High Power Vanadate lasers

    CSIR Research Space (South Africa)

    Strauss

    2006-07-01

    Full Text Available stream_source_info Strauss1_2006.pdf.txt stream_content_type text/plain stream_size 3151 Content-Encoding UTF-8 stream_name Strauss1_2006.pdf.txt Content-Type text/plain; charset=UTF-8 Laser Research Institute... University of Stellenbosch www.laser-research.co.za High Power Vanadate lasers H.J.Strauss, Dr. C. Bollig, R.C. Botha, Prof. H.M. von Bergmann, Dr. J.P. Burger Aims 1) To develop new techniques to mount laser crystals, 2) compare the lasing properties...

  17. High-power continuous-wave mid-infrared radiation generated by difference frequency mixing of diode-laser-seeded fiber amplifiers and its application to dual-beam spectroscopy

    Science.gov (United States)

    Lancaster, D. G.; Richter, D.; Curl, R. F.; Tittel, F. K.; Goldberg, L.; Koplow, J.

    1999-01-01

    We report the generation of up to 0.7 mW of narrow-linewidth (radiation at 3.3 micrometers by difference frequency mixing of a Nd:YAG-seeded 1.6-W Yb fiber amplifier and a 1.5-micrometers diode-laser-seeded 0.6-W Er/Yb fiber amplifier in periodically poled LiNbO3. A conversion efficiency of 0.09%/W (0.47 mWW-2 cm-1) was achieved. A room-air CH4 spectrum acquired with a compact 80-m multipass cell and a dual-beam spectroscopic configuration indicates an absorption sensitivity of +/-2.8 x 10(-5) (+/-1 sigma), corresponding to a sub-parts-in-10(9) (ppb) CH4 sensitivity (0.8 ppb).

  18. Evaluation of temperature variation in pulp chamber after high power diode laser irradiation ({lambda}=830 nm) on dental enamel: 'in vitro' study; Avaliacao da variacao da temperatura na camara pulpar apos a irradiacao de diodo laser de alta potencia de 830 nanometros em esmalte dental: estudo 'in vitro'

    Energy Technology Data Exchange (ETDEWEB)

    Macri, Rodrigo Teixeira

    2001-07-01

    The aim of this study was to observe the variation of temperature in the pulp chamber caused by irradiation of a commercial diode laser operating in continuous wave with wavelength 830 nm over the dental enamel. In the first part of this study, two types of tooth models were tested: 3,5 mm slice and whole tooth. In the second part, we irradiated the buccal si de of the enamel in 2 primary lower incisors from cattle with Opus 10 diode laser for 10 s with power levels of 1 W and 2 W, always using an absorber. Two thermocouples were used. The first one was inserted in the dentin wall closest to the irradiation site, while the second was inserted in the middle of the pulp chamber. It was observed that the thermocouples registered different temperatures. Always, the dentin thermocouple registered higher temperatures. Considering the dentin records, the irradiation of 1 W for 10 s can be safe for the pulp. Further studies must be developed related to the correct positioning of the thermocouples inside the pulp chamber. This was a first step of using diode laser in enamel, and in this study, we concluded that the Opus 10 diode laser shown to be safe for this use, with 1 W power for 10 S. (author)

  19. High power coaxial ubitron

    Science.gov (United States)

    Balkcum, Adam J.

    In the ubitron, also known as the free electron laser, high power coherent radiation is generated from the interaction of an undulating electron beam with an electromagnetic signal and a static periodic magnetic wiggler field. These devices have experimentally produced high power spanning the microwave to x-ray regimes. Potential applications range from microwave radar to the study of solid state material properties. In this dissertation, the efficient production of high power microwaves (HPM) is investigated for a ubitron employing a coaxial circuit and wiggler. Designs for the particular applications of an advanced high gradient linear accelerator driver and a directed energy source are presented. The coaxial ubitron is inherently suited for the production of HPM. It utilizes an annular electron beam to drive the low loss, RF breakdown resistant TE01 mode of a large coaxial circuit. The device's large cross-sectional area greatly reduces RF wall heat loading and the current density loading at the cathode required to produce the moderate energy (500 keV) but high current (1-10 kA) annular electron beam. Focusing and wiggling of the beam is achieved using coaxial annular periodic permanent magnet (PPM) stacks without a solenoidal guide magnetic field. This wiggler configuration is compact, efficient and can propagate the multi-kiloampere electron beams required for many HPM applications. The coaxial PPM ubitron in a traveling wave amplifier, cavity oscillator and klystron configuration is investigated using linear theory and simulation codes. A condition for the dc electron beam stability in the coaxial wiggler is derived and verified using the 2-1/2 dimensional particle-in-cell code, MAGIC. New linear theories for the cavity start-oscillation current and gain in a klystron are derived. A self-consistent nonlinear theory for the ubitron-TWT and a new nonlinear theory for the ubitron oscillator are presented. These form the basis for simulation codes which, along

  20. High performance MIIM diode based on cobalt oxide/titanium oxide

    Science.gov (United States)

    Herner, S. B.; Weerakkody, A. D.; Belkadi, A.; Moddel, G.

    2017-05-01

    Optical rectennas for infrared energy harvesting commonly incorporate metal/double-insulator/metal diodes. Required diode characteristics include high responsivity and low resistance near zero bias with a sub-micron area, which have not been obtainable simultaneously. Diodes based on a new material set, Co/Co3O4/TiO2/Ti and an area of 0.071 μm2, provide a median maximum responsivity of 4.1 A/W, a median zero-bias responsivity of 1.2 A/W, and a median resistance of 14 kΩ. The highest performing diode has a maximum responsivity of 4.4 A/W, a zero-bias responsivity of 2.2 A/W, and a resistance of 18 kΩ.

  1. A diode-pumped continuous-wave Nd:YAG laser with an average output power of 1 kW

    International Nuclear Information System (INIS)

    Lee, Sung Man; Cha, Byung Heon; Kim, Cheol Jung

    2004-01-01

    A diode-pumped Nd:YAG laser with an average output power of 1 kW is developed for industrial applications, such as metal cutting, precision welding, etc. To develop such a diode-pumped high power solid-state laser, a series of laser modules have been used in general with and without thermal birefringence compensation. For example, Akiyama et al. used three laser modules to obtain a output power of 5.4 kW CW.1 In the side-pumped Nd:YAG laser, which is a commonly used pump scheme to obtain high output power, the crystal rod has a short thermal focal length at a high input pump power, and the short thermal focal length in turn leads to beam distortion within a laser resonator. Therefore, to achieve a high output power with good stability, isotropic beam profile, and high optical efficiency, the detailed analysis of the resonator stability condition depending on both mirror distances and a crystal separation is essential

  2. Countercurrent in high-current microsecond diodes with magnetic insulation

    International Nuclear Information System (INIS)

    Bugaev, S.P.; Kim, A.A.; Koshelev, V.I.

    1979-01-01

    In order to increase the efficiency of the generation of tube electron beams in diodes and the efficiency of the electron beam current pulse duration studied is the formation of the electron counter current in microsecond diodes with magnetic insulation in dependence on the various geometry of the cathode joint. The experiments have been carried out at the accelerator with the following parameters: diode voltage from 400 to 600 kV, the front and duration of the pulse 75 ns and 1-2 μs respectively, beam current from 4 to 17 kA, magnetic field of 18 kGs. The current in the drift tube and the total current of the electron gun have been measured. Distributing resistance current of vacuum insulator has been controlled. Conclusions have been made, that, in the case when the diameters of cathode and cathode holder are equal, the electron current is being produced from the reverse side of cathode plasma, which expands across the magnetic field with the rate of (4-5)x10 5 sm/cs. The counter current value has constituted 15% of the total current at the use of reflector with the geometry repeating the shape of the magnetic field force lines, corresponding to the cathode radius. The counter current has not been present at the use of the flat reflector

  3. Highly efficient white top-emitting organic light-emitting diodes with forward directed light emission

    Energy Technology Data Exchange (ETDEWEB)

    Freitag, Patricia; Reineke, Sebastian; Furno, Mauro; Luessem, Bjoern; Leo, Karl [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2010-07-01

    The demand for highly efficient and energy saving illumination has increased considerably during the last decades. Organic light emitting diodes (OLEDs) are promising candidates for future lighting technologies. They offer high efficiency along with excellent color quality, allowing substantially lower power consumption than traditional illuminants. Recently, especially top-emitting devices have attracted high interest due to their compatibility with opaque substrates like metal sheets. In this contribution, we demonstrate top-emitting OLEDs with white emission spectra employing a multilayer hybrid cavity structure with two highly efficient phosphorescent emitter materials for orange-red (Ir(MDQ)2(acac)) and green (Ir(ppy)3) emission as well as the stable fluorescent blue emitter TBPe. To improve the OLED performance and modify the color quality, two different electron blocking layers and anode material combinations are tested. Compared to Lambertian emission, our devices show considerably enhanced forward emission, which is preferred for most lighting applications. Besides broadband emission and angle independent emission maxima, power efficiencies of 13.3 lm/W at 3 V and external quantum efficiencies of 5.3% are achieved. The emission shows excellent CIE coordinates of (0.420,0.407) at approx. 1000 cd/m{sup 2} and color rendering indices up to 77.

  4. Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

    Energy Technology Data Exchange (ETDEWEB)

    Hadzi-Vukovic, J [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Jevtic, M [Institute for Physics, Pregrevica 118, 11080 Zemun (Serbia and Montenegro); Rothleitner, H [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Croce, P Del [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria)

    2005-01-01

    In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits.

  5. Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

    International Nuclear Information System (INIS)

    Hadzi-Vukovic, J; Jevtic, M; Rothleitner, H; Croce, P Del

    2005-01-01

    In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits

  6. Compact pulse topology for adjustable high-voltage pulse generation using an SOS diode

    NARCIS (Netherlands)

    Driessen, A.B.J.M.; Heesch, van E.J.M.; Huiskamp, T.; Beckers, F.J.C.M.; Pemen, A.J.M.

    2014-01-01

    In this paper, a compact circuit topology is presented for pulsed power generation with a semiconductor opening switch (SOS). Such circuits require the generation of a fast forward current through the diode, followed by a reverse current that activates the recovery process. In general, magnetic

  7. Ultra-high optical responsivity of semiconducting asymmetric nano-channel diodes for photon detection

    Science.gov (United States)

    Akbas, Y.; Plecenik, T.; Durina, P.; Plecenik, A.; Jukna, A.; Wicks, G.; Sobolewski, Roman

    2017-05-01

    The asymmetric nano-channel diode (ANCD) is the 2-dimensional electron gas (2DEG) semiconductor nanodevice that, unlike a conventional diode, relies on the device nanostructure and field-controlled transport in a ballistic nanometerwidth channel instead of barriers to develop its asymmetric, diode-like current-voltage (I-V) characteristics. We focus on ANCD optoelectronic properties, and demonstrate that the devices can act as very sensitive, single-photon-level, visiblelight photodetectors. Our test structures consist of 2-μm-long and 230-nm-wide channels and were fabricated using electron-beam lithography on a GaAs/AlGaAs heterostructure with a 2DEG layer, followed by reactive ion etching. The I-V curves were collected by measuring the transport current under the voltage-source biasing condition, both in the dark and under light illumination. The experiments were conducted inside a cryostat, in a temperature range from 300 K to 78 K. As an optical excitation, we used a 800-nm-wavelength, generated by a commercial Ti:sapphire laser operated either at a quasi-continuous-wave mode or as a source of 100-fs-wide pulses. The impact of the light illumination was very clear, and at low temperatures we observed a significant photocurrent Iph 0.25 μA at temperature 78 K for the incident optical power as low as 1 nW, with a limited dark-current background. The magnitude of the device optical responsivity increased linearly with the decrease of the optical power, reaching for 1-nW optical excitation the value as high as 400 A/W at room temperature and >800 A/W at 78K. The physics of the photoresponse gain mechanism in the ANCD arises from a vast disparity between the sub-picosecond transit time of photo-excited electrons travelling in the 2DEG nanochannel and the up to microsecond lifetime of photo-excited holes pushed towards the device substrate.

  8. High power communication satellites power systems study

    International Nuclear Information System (INIS)

    Josloff, A.T.; Peterson, J.R.

    1994-01-01

    This paper discusses a DOE-funded study to evaluate the commercial attractiveness of high power communication satellites and assesses the attributes of both conventional photovoltaic and reactor power systems. This study brings together a preeminent US Industry/Russian team to cooperate on the role of high power communication satellites in the rapidly expanding communications revolution. These high power satellites play a vital role in assuring availability of universally accessible, wide bandwidth communications, for high definition TV, super computer networks and other services. Satellites are ideally suited to provide the wide bandwidths and data rates required and are unique in the ability to provide services directly to the users. As new or relocated markets arise, satellites offer a flexibility that conventional distribution services cannot match, and it is no longer necessary to be near population centers to take advantage of the telecommunication revolution. The geopolitical implications of these substantially enhanced communications capabilities will be significant

  9. Self-mode-locking operation of a diode-end-pumped Tm:YAP laser with watt-level output power

    Science.gov (United States)

    Zhang, Su; Zhang, Xinlu; Huang, Jinjer; Wang, Tianhan; Dai, Junfeng; Dong, Guangzong

    2018-03-01

    We report on a high power continuous wave (CW) self-mode-locked Tm:YAP laser pumped by a 792 nm laser diode. Without any additional mode-locking elements in the cavity, stable and self-starting mode-locking operation has been realized. The threshold pump power of the CW self-mode-locked Tm:YAP laser is only 5.4 W. The maximum average output power is as high as 1.65 W at the pump power of 12 W, with the repetition frequency of 468 MHz and the center wavelength of 1943 nm. To the best of our knowledge, this is the first CW self-mode-locked Tm:YAP laser. The experiment results show that the Tm:YAP crystal is a promising gain medium for realizing the high power self-mode-locking operation at 2 µm.

  10. Stability of high current diode under 100-nanosecond-pulse voltage

    International Nuclear Information System (INIS)

    Lai Dingguo; Qiu Aici; Zhang Yongmin; Huang Jianjun; Ren Shuqing; Yang Li

    2012-01-01

    Stability of high current diode under pulse voltage with 80 ns and 34 ns rise time was studied on the flash Ⅱ accelerator. Influence of rise time of diode voltage on startup time and cathode emission uniformity and repeatability of diode impedance was analyzed by comparing the experimental results with numerically simulated results, and the influence mechanism was discussed. The startup time of diode increases with the increasing of rise time of voltage, and the repeatability of diode impedance decreases. Discal plane cathode is prone to emit rays intensely in the center area, the time that plasma covers the surface of the cathode increases and the shielding effect has more impact on cathode emission according to the increase of rise time. Local intense emission on the cathode increases expansion speed of plasma and reduces the effective emission area. The stability of characteristic impedance of diode under a pulse voltage with slow rise time is decreased by the combined action of expansion speed of plasma and the effective emission area. (authors)

  11. Power fading mitigation of 40-Gbit/s 256-QAM OFDM carried by colorless laser diode under injection-locking.

    Science.gov (United States)

    Tsai, Cheng-Ting; Chi, Yu-Chieh; Lin, Gong-Ru

    2015-11-02

    The pre-compensation on power fading effect of a colorless laser diode (CLD) carried 40-Gbit/s 256-QAM OFDM transmission during 25-km is demonstrated. By offsetting the DC bias to thrice the threshold (I(th)) and increasing the injection to 0 dBm, the CLD not only enhances its coherence but also suppresses modulation throughput declination and reduces the relative intensity related noise floor to -50 dBm. Modeling the receiving power of the delivered 256-QAM OFDM subcarriers is established, indicating that raising the bias to 3I(th) down-shifts the power fading induced notch to 8.8 GHz. This further degrades the OFDM subcarrier peak power by -2.9 dB after 25-km transmission, and the corresponded signal-to-noise ratio (SNR), error vector magnitude (EVM) and bit-error-rate (BER) are 26.1 dB, 4.9% and 6.5 × 10(-3), respectively. Pre-leveling the OFDM subcarrier as well as the modulation throughput effectively compromises the over-bias enlarged power fading to promote transmission. With a pre-leveled power slope of 1.5 dB/GHz for 256-QAM OFDM data, the modulation throughput declination of the high biased CLD significantly mitigates under BtB transmission, enabling the receiving sensitivity at -7.2 dBm with SNR, EVM and BER of 29.9 dB, 3.1% and 1.5 × 10(-4), respectively. Increasing the pre-leveling slope to 3.2 dB/GHz minimizes the fiber dispersion induced power fading, which improves the receiving SNR, EVM and BER to 27.4 dB, 4.2% and 2.6 × 10(-3), respectively, with receiving sensitivity of -3 dBm and power penalty of 4.2 dB after 25-km SMF transmission.

  12. High speed micromachining with high power UV laser

    Science.gov (United States)

    Patel, Rajesh S.; Bovatsek, James M.

    2013-03-01

    Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

  13. High-energy, high-repetition-rate picosecond pulses from a quasi-CW diode-pumped Nd:YAG system.

    Science.gov (United States)

    Noom, Daniel W E; Witte, Stefan; Morgenweg, Jonas; Altmann, Robert K; Eikema, Kjeld S E

    2013-08-15

    We report on a high-power quasi-CW pumped Nd:YAG laser system, producing 130 mJ, 64 ps pulses at 1064 nm wavelength with a repetition rate of 300 Hz. Pulses from a Nd:YVO(4) oscillator are first amplified by a regenerative amplifier to the millijoule level and then further amplified in quasi-CW diode-pumped Nd:YAG modules. Pulsed diode pumping enables a high gain at repetition rates of several hundred hertz, while keeping thermal effects manageable. Birefringence compensation and multiple thermal-lensing-compensated relay-imaging stages are used to maintain a top-hat beam profile. After frequency doubling, 75 mJ pulses are obtained at 532 nm. The intensity stability is better than 1.1%, which makes this laser an attractive pump source for a high-repetition-rate optical parametric amplification system.

  14. Multifunctional hybrid diode: Study of photoresponse, high responsivity, and charge injection mechanisms

    Science.gov (United States)

    Singh, Jitendra; Singh, R. G.; Gautam, Subodh K.; Singh, Fouran

    2018-05-01

    A multifunctional hybrid heterojunction diode is developed on porous silicon and its current density-voltage characteristics reveal a good rectification ratio along with other superior parameters such as ideality factor, barrier height and series resistance. The diode also functions as an efficient photodiode to manifest high photosensitivity with high responsivity under illumination with broadband solar light, UV light, and green light. The diode is also carefully scrutinized for its sensitivity and repeatability over many cycles under UV and green light and is found to have a quick response and extremely fast recovery times. The notable responsivity is attributed to the generation of high density of excitons in the depletion region by the absorption of incident photons and their separation by an internal electric field besides an additional photocurrent due to the charging of polymer chains. The mechanisms of generation, injection and transport of charge carriers are explained by developing a schematic energy band diagram. The transport phenomenon of carriers is further investigated from room temperature down to a very low temperature of 10 K. An Arrhenius plot is made to determine the Richardson constant. Various diode parameters as mentioned above are also determined and the dominance of the transport mechanism of charge carriers in different temperature regimes such as diffusion across the junction and/or quantum tunneling through the barriers are explained. The developed multifunction heterojunction hybrid diodes have implications for highly sensitive photodiodes in the UV and visible range of electromagnetic spectrum that can be very promising for efficient optoelectronic devices.

  15. High voltage high brightness electron accelerator with MITL voltage adder coupled to foilless diode

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poulkey, J.W.; Rovang, D.

    1995-01-01

    The design and analysis of a high brightness electron beam experiment under construction at Sandia National Laboratory is presented. The beam energy is 12 MeV, the current 35-40 kA, the rms radius 0.5 mm, and the pulse duration FWHM 40 ns. The accelerator is SABRE a pulsed inductive voltage adder, and the electron source is a magnetically immersed foilless diode. This experiment has as its goal to stretch the technology to the edge and produce the highest possible electron current in a submillimeter radius beam

  16. Nuclear power flies high

    International Nuclear Information System (INIS)

    Friedman, S.T.

    1983-01-01

    Nuclear power in aircraft, rockets and satellites is discussed. No nuclear-powered rockets or aircraft have ever flown, but ground tests were successful. Nuclear reactors are used in the Soviet Cosmos serles of satellites, but only one American satellite, the SNAP-10A, contained a reactor. Radioisotope thermoelectric generators, many of which use plutonium 238, have powered more than 20 satellites launched into deep space by the U.S.A

  17. Single-transverse-mode near-IR superluminescent diodes with cw output power up to 100 mW

    International Nuclear Information System (INIS)

    Andreeva, E V; Il'chenko, S N; Kostin, Yu O; Yakubovich, S D

    2014-01-01

    A series of light-emitting modules based on single-mode quantum-well superluminescent diodes with centre emission wavelengths of about 790, 840, 960 and 1060 nm and a cw output power up to 100 mW in free space is developed. A sufficiently long service life of these devices is demonstrated. (lasers)

  18. Single-transverse-mode near-IR superluminescent diodes with cw output power up to 100 mW

    Energy Technology Data Exchange (ETDEWEB)

    Andreeva, E V; Il' chenko, S N; Kostin, Yu O [Superlum Diodes Ltd., Moscow (Russian Federation); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

    2014-10-29

    A series of light-emitting modules based on single-mode quantum-well superluminescent diodes with centre emission wavelengths of about 790, 840, 960 and 1060 nm and a cw output power up to 100 mW in free space is developed. A sufficiently long service life of these devices is demonstrated. (lasers)

  19. Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

    Science.gov (United States)

    Zhang, Liuqi; Yang, Xiaolei; Jiang, Qi; Wang, Pengyang; Yin, Zhigang; Zhang, Xingwang; Tan, Hairen; Yang, Yang (Michael); Wei, Mingyang; Sutherland, Brandon R.; Sargent, Edward H.; You, Jingbi

    2017-06-01

    Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m-2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date.

  20. A thermosyphon heat pipe cooler for high power LEDs cooling

    Science.gov (United States)

    Li, Ji; Tian, Wenkai; Lv, Lucang

    2016-08-01

    Light emitting diode (LED) cooling is facing the challenge of high heat flux more seriously with the increase of input power and diode density. The proposed unique thermosyphon heat pipe heat sink is particularly suitable for cooling of high power density LED chips and other electronics, which has a heat dissipation potential of up to 280 W within an area of 20 mm × 22 mm (>60 W/cm2) under natural air convection. Meanwhile, a thorough visualization investigation was carried out to explore the two phase flow characteristics in the proposed thermosyphon heat pipe. Implementing this novel thermosyphon heat pipe heat sink in the cooling of a commercial 100 W LED integrated chip, a very low apparent thermal resistance of 0.34 K/W was obtained under natural air convection with the aid of the enhanced boiling heat transfer at the evaporation side and the enhanced natural air convection at the condensation side.

  1. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based......, and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often...

  2. High power communication satellites power systems study

    Science.gov (United States)

    Josloff, Allan T.; Peterson, Jerry R.

    1995-01-01

    This paper discusses a planned study to evaluate the commercial attractiveness of high power communication satellites and assesses the attributes of both conventional photovoltaic and reactor power systems. These high power satellites can play a vital role in assuring availability of universally accessible, wide bandwidth communications, for high definition TV, super computer networks and other services. Satellites are ideally suited to provide the wide bandwidths and data rates required and are unique in the ability to provide services directly to the users. As new or relocated markets arise, satellites offer a flexibility that conventional distribution services cannot match, and it is no longer necessary to be near population centers to take advantage of the telecommunication revolution. The geopolitical implications of these substantially enhanced communications capabilities can be significant.

  3. High Current Ionic Diode Using Homogeneously Charged Asymmetric Nanochannel Network Membrane.

    Science.gov (United States)

    Choi, Eunpyo; Wang, Cong; Chang, Gyu Tae; Park, Jungyul

    2016-04-13

    A high current ionic diode is achieved using an asymmetric nanochannel network membrane (NCNM) constructed by soft lithography and in situ self-assembly of nanoparticles with uniform surface charge. The asymmetric NCNM exhibits high rectified currents without losing a rectification ratio because of its ionic selectivity gradient and differentiated electrical conductance. Asymmetric ionic transport is analyzed with diode-like I-V curves and visualized via fluorescent dyes, which is closely correlated with ionic selectivity and ion distribution according to variation of NCNM geometries.

  4. High power blue LED development using different growth modes

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Dong S.; Florescu, Doru I.; Ramer, Jeff C.; Merai, Vinod; Parekh, Aniruddh; Begarney, Michael J.; Armour, Eric A. [Veeco TurboDisc Operations, 394 Elizabeth Avenue, Somerset, NJ 08873 (United States); Lu Dong [Veeco TurboDisc Operations, 394 Elizabeth Avenue, Somerset, NJ 08873 (United States); School of Engineering, Rutgers University, Piscataway, NJ 08854 (United States)

    2004-09-01

    Blue high brightness light emitting diodes (HB-LEDs) have been developed using different growth modes in the active layers. Piezoelectric field engineering improves the optical output power in multiple quantum well (MQW) LEDs by inserting an optimized transitional superlattice (TSL) before the active MQW layers. Within single quantum well (SQW) LEDs, quasi-Quantum Dot (QD) growth for Indium localization has been realized. The SQW LED output power exceeds the strain engineered MQW LEDs. The experimental data indicates that Indium localization enhances overall quantum efficiency and results in increased output power for HB-LEDs. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Large-area high-power VCSEL pump arrays optimized for high-energy lasers

    Science.gov (United States)

    Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

    2012-06-01

    Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

  6. High Power Orbit Transfer Vehicle

    National Research Council Canada - National Science Library

    Gulczinski, Frank

    2003-01-01

    ... from Virginia Tech University and Aerophysics, Inc. to examine propulsion requirements for a high-power orbit transfer vehicle using thin-film voltaic solar array technologies under development by the Space Vehicles Directorate (dubbed PowerSail...

  7. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...

  8. Nonimaging concentrators for diode-pumped slab lasers

    Science.gov (United States)

    Lacovara, Philip; Gleckman, Philip L.; Holman, Robert L.; Winston, Roland

    1991-10-01

    Diode-pumped slab lasers require concentrators for high-average power operation. We detail the properties of diode lasers and slab lasers which set the concentration requirements and the concentrator design methodologies that are used, and describe some concentrator designs used in high-average power slab lasers at Lincoln Laboratory.

  9. Compact green-diode-based lasers for biophotonic bioimaging

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Petersen, Paul Michael

    2014-01-01

    Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.......Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers....

  10. Highly Efficient Visible Colloidal Lead-Halide Perovskite Nanocrystal Light-Emitting Diodes

    Science.gov (United States)

    Yan, Fei; Xing, Jun; Xing, Guichuan; Quan, Lina; Tan, Swee Tiam; Zhao, Jiaxin; Su, Rui; Zhang, Lulu; Chen, Shi; Zhao, Yawen; Huan, Alfred; Sargent, Edward H.; Xiong, Qihua; Demir, Hilmi Volkan

    2018-05-01

    Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application prospects in lighting, however, remain still uncertain due to a variety of shortcomings in device performance including their limited levels of luminous efficiency achievable thus far. Here we show high-efficiency PeLEDs based on colloidal perovskite nanocrystals (PeNCs) synthesized at room temperature possessing dominant first-order excitonic radiation (enabling a photoluminescence quantum yield of 71% in solid film), unlike in the case of bulk perovskites with slow electron-hole bimolecular radiative recombination (a second-order process). In these PeLEDs, by reaching charge balance in the recombination zone, we find that the Auger nonradiative recombination, with its significant role in emission quenching, is effectively suppressed in low driving current density range. In consequence, these devices reach a record high maximum external quantum efficiency of 12.9% reported to date and an unprecedentedly high power efficiency of 30.3 lm W-1 at luminance levels above 1000 cd m-2 as required for various applications. These findings suggest that, with feasible levels of device performance, the PeNCs hold great promise for their use in LED lighting and displays.

  11. Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers

    International Nuclear Information System (INIS)

    Chen, Wei-Chung; Hsu, Po-Ching; Chien, Chih-Wei; Chang, Kuei-Ming; Hsu, Chao-Jui; Chang, Ching-Hsiang; Lee, Wei-Kai; Chou, Wen-Fang; Wu, Chung-Chih; Hsieh, Hsing-Hung

    2014-01-01

    In this work, we report successful implementation of room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu 2 O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu 2 O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44 V, a high rectification ratio of up to 3.4 × 10 4 at ±1.2 V, a high forward current of 1 A cm −2 around 1 V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu 2 O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27 MHz, sufficient for high-frequency (13.56 MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics. (paper)

  12. High power excimer laser

    International Nuclear Information System (INIS)

    Oesterlin, P.; Muckenheim, W.; Basting, D.

    1988-01-01

    Excimer lasers emitting more than 200 W output power are not commercially available. A significant increase requires new technological efforts with respect to both the gas circulation and the discharge system. The authors report how a research project has yielded a laser which emits 0.5 kW at 308 nm when being UV preionized and operated at a repetition rate of 300 Hz. The laser, which is capable of operating at 500 Hz, can be equipped with an x-ray preionization module. After completing this project 1 kW output power will be available

  13. Design and development of a high-power, 500 kV pulsed line

    International Nuclear Information System (INIS)

    Nicolas, A.

    A study was made of very high voltage (500 kV) pulse production for 50 ns at half height. A coaxial line was coupled to a Marx generator for obtaining the pulses on an impedance-adapted electron diode. The maximum power obtained was 6.4 x 10 10 W with a current front in the diode of about 30 ns (80 ns pulse length at half height)

  14. High power electron beam accelerators for gas laser excitation

    International Nuclear Information System (INIS)

    Kelly, J.G.; Martin, T.H.; Halbleib, J.A.

    1976-06-01

    A preliminary parameter investigation has been used to determine a possible design of a high-power, relativistic electron beam, transversely excited laser. Based on considerations of present and developing pulsed power technology, broad area diode physics and projected laser requirements, an exciter is proposed consisting of a Marx generator, pulse shaping transmission lines, radially converging ring diodes and a laser chamber. The accelerator should be able to deliver approximately 20 kJ of electron energy at 1 MeV to the 10 4 cm 2 cylindrical surface of a laser chamber 1 m long and 0.3 m in diameter in 24 ns with very small azimuthal asymmetry and uniform radial deposition

  15. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

    Energy Technology Data Exchange (ETDEWEB)

    Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2014-02-03

    A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

  16. Regimes of magnetic insulation in a high-current diodes and transmission lines of conical configuration

    International Nuclear Information System (INIS)

    Vasilenko, O.I.; Voronin, V.S.; Lebedev, A.N.

    1977-01-01

    A self-consistent kinematic model of a steady-state electron flow between two electrodes of a high-current diode has been considered with a tapered configuration. All the electrons have presumably been released from the cathode with a zero velocity and some portion of the total current flows along the cathode surface as the conduction current. A set of volt-ampere characteristics has been obtained for the tapered diode with a flat anode. At a preset cathode current the thickness and current of the electron layer increase as the voltage goes up. The considered kinematic model substantiates and specifies a model of the Brillouin parapotential flow

  17. Highly-reliable operation of 638-nm broad stripe laser diode with high wall-plug efficiency for display applications

    Science.gov (United States)

    Yagi, Tetsuya; Shimada, Naoyuki; Nishida, Takehiro; Mitsuyama, Hiroshi; Miyashita, Motoharu

    2013-03-01

    Laser based displays, as pico to cinema laser projectors have gathered much attention because of wide gamut, low power consumption, and so on. Laser light sources for the displays are operated mainly in CW, and heat management is one of the big issues. Therefore, highly efficient operation is necessitated. Also the light sources for the displays are requested to be highly reliable. 638 nm broad stripe laser diode (LD) was newly developed for high efficiency and highly reliable operation. An AlGaInP/GaAs red LD suffers from low wall plug efficiency (WPE) due to electron overflow from an active layer to a p-cladding layer. Large optical confinement factor (Γ) design with AlInP cladding layers is adopted to improve the WPE. The design has a disadvantage for reliable operation because the large Γ causes high optical density and brings a catastrophic optical degradation (COD) at a front facet. To overcome the disadvantage, a window-mirror structure is also adopted in the LD. The LD shows WPE of 35% at 25°C, highest record in the world, and highly stable operation at 35°C, 550 mW up to 8,000 hours without any catastrophic optical degradation.

  18. High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

    Science.gov (United States)

    Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

    2010-10-01

    White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

  19. A battery-powered high-current power supply for superconductors

    CERN Document Server

    Wake, M; Suda, K

    2002-01-01

    Since superconductors do not require voltages, a high-current power supply could run with low power if the voltage is sufficiently reduced. Even a battery-powered power supply could give as much as 2,000A for a superconductor. To demonstrate this hypothesis, a battery-powered 2,000A power supply was constructed. It uses an IGBT chopper and Schottky diode together with a specially arranged transformer to produce a high current with low voltage. Testing of 2,000A operation was performed for about 1.5 hr using 10 car batteries. Charging time for this operation was 8 hr. Ramping control was smooth and caused no trouble. Although the IGBT frequency ripple of 16.6 kHz was easily removed using a passive filter, spike noise remained in the output voltage. This ripple did not cause any trouble in operating a pancake-type inductive superconducting load. (author)

  20. High average power supercontinuum sources

    Indian Academy of Sciences (India)

    The physical mechanisms and basic experimental techniques for the creation of high average spectral power supercontinuum sources is briefly reviewed. We focus on the use of high-power ytterbium-doped fibre lasers as pump sources, and the use of highly nonlinear photonic crystal fibres as the nonlinear medium.

  1. 5.5 W of Diffraction-Limited Green Light Generated by SFG of Tapered Diode Lasers in a Cascade of Nonlinear Crystals

    DEFF Research Database (Denmark)

    Hansen, Anders Kragh; Jensen, Ole Bjarlin; Andersen, Peter Eskil

    2015-01-01

    Diode-based high power visible lasers are perfect pump sources for, e.g., titaniumsapphire lasers. The combination of favorable scaling laws in both SFG and cascading of nonlinear crystals allows access to unprecedented powers in diode-based systems.......Diode-based high power visible lasers are perfect pump sources for, e.g., titaniumsapphire lasers. The combination of favorable scaling laws in both SFG and cascading of nonlinear crystals allows access to unprecedented powers in diode-based systems....

  2. A method to quench and recharge avalanche photo diodes for use in high rate situations

    International Nuclear Information System (INIS)

    Regan, T.O.; Fenker, H.C.; Thomas, J.; Oliver, J.

    1992-06-01

    We present a new method of using Avalanche Photo Diodes (APDS) for low level light detection in Geiger mode in high rate situations such as those encountered at the Superconducting Super Collider (SSC). The new technique is readily adaptable to implementation in CMOS VLSI

  3. Highly efficient exciplex organic light-emitting diodes incorporating a heptazine derivative as an electron acceptor.

    Science.gov (United States)

    Li, Jie; Nomura, Hiroko; Miyazaki, Hiroshi; Adachi, Chihaya

    2014-06-11

    Highly efficient exciplex systems incorporating a heptazine derivative () as an electron acceptor and 1,3-di(9H-carbazol-9-yl)benzene () as an electron donor are developed. An organic light-emitting diode containing 8 wt% : as an emitting layer exhibits a maximum external quantum efficiency of 11.3%.

  4. High tunability and superluminescence in InAs mid-infrared light emitting diodes

    International Nuclear Information System (INIS)

    Sherstnev, V.V.; Krier, A.; Hill, G.

    2002-01-01

    We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

  5. Investigation of significantly high barrier height in Cu/GaN Schottky diode

    Directory of Open Access Journals (Sweden)

    Manjari Garg

    2016-01-01

    Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

  6. High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

    Science.gov (United States)

    Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

    2018-06-08

    Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

    Science.gov (United States)

    Jacobs, K. J. P.; Stevens, B. J.; Baba, R.; Wada, O.; Mukai, T.; Hogg, R. A.

    2017-10-01

    We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 - 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (PMAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance.

  8. High-resolution smile measurement and control of wavelength-locked QCW and CW laser diode bars

    Science.gov (United States)

    Rosenkrantz, Etai; Yanson, Dan; Klumel, Genady; Blonder, Moshe; Rappaport, Noam; Peleg, Ophir

    2018-02-01

    High-power linewidth-narrowed applications of laser diode arrays demand high beam quality in the fast, or vertical, axis. This requires very high fast-axis collimation (FAC) quality with sub-mrad angular errors, especially where laser diode bars are wavelength-locked by a volume Bragg grating (VBG) to achieve high pumping efficiency in solid-state and fiber lasers. The micron-scale height deviation of emitters in a bar against the FAC lens causes the so-called smile effect with variable beam pointing errors and wavelength locking degradation. We report a bar smile imaging setup allowing FAC-free smile measurement in both QCW and CW modes. By Gaussian beam simulation, we establish optimum smile imaging conditions to obtain high resolution and accuracy with well-resolved emitter images. We then investigate the changes in the smile shape and magnitude under thermal stresses such as variable duty cycles in QCW mode and, ultimately, CW operation. Our smile measurement setup provides useful insights into the smile behavior and correlation between the bar collimation in QCW mode and operating conditions under CW pumping. With relaxed alignment tolerances afforded by our measurement setup, we can screen bars for smile compliance and potential VBG lockability prior to assembly, with benefits in both lower manufacturing costs and higher yield.

  9. Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

    Science.gov (United States)

    Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

    2017-06-01

    This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

  10. Building block diode laser concept for high brightness laser output in the kW range and its applications

    Science.gov (United States)

    Ferrario, Fabio; Fritsche, Haro; Grohe, Andreas; Hagen, Thomas; Kern, Holger; Koch, Ralf; Kruschke, Bastian; Reich, Axel; Sanftleben, Dennis; Steger, Ronny; Wallendorf, Till; Gries, Wolfgang

    2016-03-01

    The modular concept of DirectPhotonics laser systems is a big advantage regarding its manufacturability, serviceability as well as reproducibility. By sticking to identical base components an economic production allows to serve as many applications as possible while keeping the product variations minimal. The modular laser design is based on single emitters and various combining technics. In a first step we accept a reduction of the very high brightness of the single emitters by vertical stacking several diodes in fast axis. This can be theoretically done until the combined fast axis beam quality is on a comparable level as the individual diodes slow axis beam quality without loosing overall beam performance after fiber coupling. Those stacked individual emitters can be wavelength stabilized by an external resonator, providing the very same feedback to each of those laser diodes which leads to an output power of about 100 W with BPP of BPP. The 500 W building blocks are consequently designed in a way that they feature a high flexibility with regard to their emitting wavelength bandwidth. Therefore, new wavelengths can be implemented by only exchanging parts and without any additional change of the production process. This design principal theoretically offers the option to adapt the wavelength of those blocks to any applications, from UV, visible into the far IR as long as there are any diodes commercially available. This opens numerous additional applications like laser pumping, scientific applications, materials processing such as cutting and welding of copper aluminum or steel and also medical application. Typical operating at wavelengths in the 9XX nm range, these systems are designed for and mainly used in cutting and welding applications, but adapted wavelength ranges such as 793 nm and 1530 nm are also offered. Around 15XX nm the diodes are already successfully used for resonant pumping of Erbium lasers [1]. Furthermore, the fully integrated electronic

  11. Study in vitro of dental enamel irradiated with a high power diode laser operating at 960 nm: morphological analysis of post-irradiation dental surface and thermal effect analysis in pulp chamber due to laser application; Estudo in vitro do esmalte dental irradiado com laser de diodo de alta potencia em 960 nm: analise morfologica da superficie dental pos-irradiada e analise do comportamento termico na camara pulpar devido a aplicacao laser

    Energy Technology Data Exchange (ETDEWEB)

    Quinto Junior, Jose

    2001-07-01

    Objectives: This study examines the structural and thermal modifications induced in dental enamel under dye assisted diode laser irradiation. The aim of this study is to verify if this laser-assisted treatment is capable to modify the enamel surface by causing fusion of the enamel surface layer. At the same time, the pulpal temperature rise must be kept low enough in order not to cause pulpar necrosis. To achieve this target, it is necessary to determine suitable laser parameters. As is known, fusion of the enamel surface followed by re-solidification produce a more acid resistant layer. This surface treatment is being researched as a new method for caries prevention. Method and Materials: A series of fourteen identically prepared enamel samples of human teeth were irradiated with a high power diode laser operating at 960 nm and using fiber delivery. Prior to irradiation, a fine layer of cromophorous ink was applied to the enamel surface. In the first part of the experiment the best parameter for pulse duration was determined. In the second part of the experimental phase the same energy density was used but with different repetition rates. During irradiation we monitored the temperature rise in the pulpal cavity. The morphology of the treated samples was analysed under SEM. Results: The morphology of the treated samples showed a homogeneously re-solidified enamel layer. The results of the temperature analysis showed a decrease of the pulpal temperature rise with decreasing repetition rate. Conclusion: With the diode laser it is possible to cause morphological alterations of the enamel surface, which is known to increase the enamel resistance against acid attack, and still maintain the temperature rise in the pulpar chamber below damage threshold. (author)

  12. High-power LEDs for plant cultivation

    Science.gov (United States)

    Tamulaitis, Gintautas; Duchovskis, Pavelas; Bliznikas, Zenius; Breive, Kestutis; Ulinskaite, Raimonda; Brazaityte, Ausra; Novickovas, Algirdas; Zukauskas, Arturas; Shur, Michael S.

    2004-10-01

    We report on high-power solid-state lighting facility for cultivation of greenhouse vegetables and on the results of the study of control of photosynthetic activity and growth morphology of radish and lettuce imposed by variation of the spectral composition of illumination. Experimental lighting modules (useful area of 0.22 m2) were designed based on 4 types of high-power light-emitting diodes (LEDs) with emission peaked in red at the wavelengths of 660 nm and 640 nm (predominantly absorbed by chlorophyll a and b for photosynthesis, respectively), in blue at 455 nm (phototropic function), and in far-red at 735 nm (important for photomorphology). Morphological characteristics, chlorophyll and phytohormone concentrations in radish and lettuce grown in phytotron chambers under lighting with different spectral composition of the LED-based illuminator and under illumination by high pressure sodium lamps with an equivalent photosynthetic photon flux density were compared. A well-balanced solid-state lighting was found to enhance production of green mass and to ensure healthy morphogenesis of plants compared to those grown using conventional lighting. We observed that the plant morphology and concentrations of morphologically active phytohormones is strongly affected by the spectral composition of light in the red region. Commercial application of the LED-based illumination for large-scale plant cultivation is discussed. This technology is favorable from the point of view of energy consumption, controllable growth, and food safety but is hindered by high cost of the LEDs. Large scale manufacturing of high-power red AlInGaP-based LEDs emitting at 650 nm and a further decrease of the photon price for the LEDs emitting in the vicinity of the absorption peak of chlorophylls have to be achieved to promote horticulture applications.

  13. Diode-side-pumped intracavity frequency-doubled Nd:YAG/BaWO4 Raman laser generating average output power of 3.14 W at 590 nm.

    Science.gov (United States)

    Li, Shutao; Zhang, Xingyu; Wang, Qingpu; Zhang, Xiaolei; Cong, Zhenhua; Zhang, Huaijin; Wang, Jiyang

    2007-10-15

    We report a linear-cavity high-power all-solid-state Q-switched yellow laser. The laser source comprises a diode-side-pumped Nd:YAG module that produces 1064 nm fundamental radiation, an intracavity BaWO(4) Raman crystal that generates a first-Stokes laser at 1180 nm, and a KTP crystal that frequency doubles the first-Stokes laser to 590 nm. A convex-plane cavity is employed in this configuration to counteract some of the thermal effect caused by high pump power. An average output power of 3.14 W at 590 nm is obtained at a pulse repetition frequency of 10 kHz.

  14. Practical investigation of the gate bias effect on the reverse recovery behavior of the body diode in power MOSFETs

    DEFF Research Database (Denmark)

    Lindberg-Poulsen, Kristian; Petersen, Lars Press; Ouyang, Ziwei

    2014-01-01

    This work considers an alternative method of reducing the body diode reverse recovery by taking advantage of the MOSFET body effect, and applying a bias voltage to the gate before reverse recovery. A test method is presented, allowing the accurate measurement of voltage and current waveforms during...... reverse recovery at high di=dt. Different bias voltages and dead times are combined, giving a loss map which makes it possible to evaluate the practical efficacy of gate bias on reducing the MOSFET body diode reverse recovery, while comparing it to the well known methods of dead time optimization...

  15. High-powered manoeuvres

    CERN Multimedia

    Anaïs Schaeffer

    2013-01-01

    This week, CERN received the latest new transformers for the SPS. Stored in pairs in 24-tonne steel containers, these transformers will replace the old models, which have been in place since 1981.     The transformers arrive at SPS's access point 4 (BA 4). During LS1, the TE-EPC Group will be replacing all of the transformers for the main converters of the SPS. This renewal campaign is being carried out as part of the accelerator consolidation programme, which began at the start of April and will come to an end in November. It involves 80 transformers: 64 with a power of 2.6 megavolt-amperes (MVA) for the dipole magnets, and 16 with 1.9 MVA for the quadrupoles. These new transformers were manufactured by an Italian company and are being installed outside the six access points of the SPS by the EN-HE Group, using CERN's 220-tonne crane. They will contribute to the upgrade of the SPS, which should thus continue to operate as the injector for the LHC until 2040....

  16. High power, medium voltage, series resonant converter for DC wind turbines

    DEFF Research Database (Denmark)

    Dincan, Catalin Gabriel; Kjær, Philip Carne; Chen, Yu-Hsing

    2018-01-01

    , and the resulting compact and efficient transformer, and soft-commutated inverter, present particular advantages in high-power, high-voltage applications, like DC offshore wind turbines. With transformer excitation frequency in hundreds of Hz range, line-frequency diodes can be employed in the high...

  17. Gain measurement in a CW medium-power diode pumped Nd:YAG laser amplifier by ASE analysis

    International Nuclear Information System (INIS)

    Razzaghi, D; Hajiesmaeilbaigi, F; Ruzbehani, M

    2014-01-01

    Using the relation between amplified spontaneous emission intensity and gain, a set of formulas is derived for gain evaluation by comparing fluorescence yield in two different lengths of the active medium. Experimental measurements are carried out and gain is calculated by solving the derived formula. For comparison, measurements are also carried out using the probe beam method, which shows good agreement between the two methods in a typical CW medium-power diode pumped Nd:YAG amplifier. (paper)

  18. High power pulsed sources based on fiber amplifiers

    Science.gov (United States)

    Canat, Guillaume; Jaouën, Yves; Mollier, Jean-Claude; Bouzinac, Jean-Pierre; Cariou, Jean-Pierre

    2017-11-01

    Cladding-pumped rare-earth-doped fiber laser technologies are currently among the best sources for high power applications. Theses extremely compact and robust sources appoint them as good candidate for aeronautical and space applications. The double-clad (DC) fiber converts the poor beamquality of high-power large-area pump diodes from the 1st cladding to laser light at another wavelength guided in an active single-mode core. High-power coherent MOPA (Master Oscillator Power Amplifier) sources (several 10W CW or several 100W in pulsed regime) will soon be achieved. Unfortunately it also brings nonlinear effects which quickly impairs output signal distortions. Stimulated Brillouin scattering (SBS) and optical parametric amplification (OPA) have been shown to be strong limitations. Based on amplifier modeling and experiments we discuss the performances of these sources.

  19. Magnetic insulation regimes in high-current diodes and transmission lines of conical configuration

    International Nuclear Information System (INIS)

    Vasilenko, O.I.; Voronin, V.S.; Lebedev, A.N.

    1977-01-01

    Steady states of the electron current in a high-voltage diode and of the transmission line of conical configuration at emission current restriction by the space are considered on the basis of the self-consistant kinetic description in connection with the prospects of controlled thermonuclear synthesis. Proceeding from the magnetic self-insulation principle solved are the problems of controling the emission electron current in the double-electron geometry to prevent it from being present on the anode in the line regime and to achieve its maximum focusing in the diode regime. The motion of plasma boundaries as well as the probable contribution of the ion component of the current were not taken into consideration. It is shown that the beam focusing on the system axis takes place at sufficiently strong currents. It is connected with the fact that some part of the full diode current runs on the cathode surface. The results were compared with existing approximate diode models and with the experimetal data on focusien of strong-current beams

  20. Autonomously managed high power systems

    International Nuclear Information System (INIS)

    Weeks, D.J.; Bechtel, R.T.

    1985-01-01

    The need for autonomous power management capabilities will increase as the power levels of spacecraft increase into the multi-100 kW range. The quantity of labor intensive ground and crew support consumed by the 9 kW Skylab cannot be afforded in support of a 75-300 kW Space Station or high power earth orbital and interplanetary spacecraft. Marshall Space Flight Center is managing a program to develop necessary technologies for high power system autonomous management. To date a reference electrical power system and automation approaches have been defined. A test facility for evaluation and verification of management algorithms and hardware has been designed with the first of the three power channel capability nearing completion

  1. Coherent beam combining architectures for high power tapered laser arrays

    Science.gov (United States)

    Schimmel, G.; Janicot, S.; Hanna, M.; Decker, J.; Crump, P.; Erbert, G.; Witte, U.; Traub, M.; Georges, P.; Lucas-Leclin, G.

    2017-02-01

    Coherent beam combining (CBC) aims at increasing the spatial brightness of lasers. It consists in maintaining a constant phase relationship between different emitters, in order to combine them constructively in one single beam. We have investigated the CBC of an array of five individually-addressable high-power tapered laser diodes at λ = 976 nm, in two architectures: the first one utilizes the self-organization of the lasers in an interferometric extended-cavity, which ensures their mutual coherence; the second one relies on the injection of the emitters by a single-frequency laser diode. In both cases, the coherent combining of the phase-locked beams is ensured on the front side of the array by a transmission diffractive grating with 98% efficiency. The passive phase-locking of the laser bar is obtained up to 5 A (per emitter). An optimization algorithm is implemented to find the proper currents in the five ridge sections that ensured the maximum combined power on the front side. Under these conditions we achieve a maximum combined power of 7.5 W. In the active MOPA configuration, we can increase the currents in the tapered sections up to 6 A and get a combined power of 11.5 W, corresponding to a combining efficiency of 76%. It is limited by the beam quality of the tapered emitters and by fast phase fluctuations between emitters. Still, these results confirm the potential of CBC approaches with tapered lasers to provide a high-power and high-brightness beam, and compare with the current state-of-the-art with laser diodes.

  2. Radiation effects in semiconductor laser diode arrays

    International Nuclear Information System (INIS)

    Carson, R.F.

    1988-01-01

    The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

  3. High performance inkjet printed phosphorescent organic light emitting diodes based on small molecules commonly used in vacuum processes

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Sung-Hoon [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Hyong-Jun, E-mail: hkim@kongju.ac.kr [Department of Chemical Engineering, Kongju National University, Cheonan, 330-717 (Korea, Republic of)

    2012-09-30

    High efficiency phosphorescent organic light emitting diodes (OLEDs) are realized by inkjet printing based on small molecules commonly used in vacuum processes in spite of the limitation of the limited solubility. The OLEDs used the inkjet printed 5 wt.% tris(2-phenylpyridine)iridium(III) (Ir(ppy){sub 3}) doped in 4,4 Prime -Bis(carbazol-9-yl)biphenyl (CBP) as the light emitting layer on various small molecule based hole transporting layers, which are widely used in the fabrication of OLEDs by vacuum processes. The OLEDs resulted in the high power and the external quantum efficiencies of 29.9 lm/W and 11.7%, respectively, by inkjet printing the CBP:Ir(ppy){sub 3} on a 40 nm thick 4,4 Prime ,4 Double-Prime -tris(carbazol-9-yl)triphenylamine layer. The performance was very close to a vacuum deposited device with a similar structure. - Highlights: Black-Right-Pointing-Pointer Effective inkjet printed organic light emitting diode (OLED) technique is explored. Black-Right-Pointing-Pointer Solution process on commonly used hole transporting material (HTM) is demonstrated. Black-Right-Pointing-Pointer Triplet energy overlap of HTM and emitting material is the key to the performance. Black-Right-Pointing-Pointer Simple inkjet printed OLED provides the high current efficiency of 40 cd/A.

  4. EURISOL High Power Targets

    CERN Document Server

    Kadi, Y; Lindroos, M; Ridikas, D; Stora, T; Tecchio, L; CERN. Geneva. BE Department

    2009-01-01

    Modern Nuclear Physics requires access to higher yields of rare isotopes, that relies on further development of the In-flight and Isotope Separation On-Line (ISOL) production methods. The limits of the In-Flight method will be applied via the next generation facilities FAIR in Germany, RIKEN in Japan and RIBF in the USA. The ISOL method will be explored at facilities including ISAC-TRIUMF in Canada, SPIRAL-2 in France, SPES in Italy, ISOLDE at CERN and eventually at the very ambitious multi-MW EURISOL facility. ISOL and in-flight facilities are complementary entities. While in-flight facilities excel in the production of very short lived radioisotopes independently of their chemical nature, ISOL facilities provide high Radioisotope Beam (RIB) intensities and excellent beam quality for 70 elements. Both production schemes are opening vast and rich fields of nuclear physics research. In this article we will introduce the targets planned for the EURISOL facility and highlight some of the technical and safety cha...

  5. Applications of high power microwaves

    International Nuclear Information System (INIS)

    Benford, J.; Swegle, J.

    1993-01-01

    The authors address a number of applications for HPM technology. There is a strong symbiotic relationship between a developing technology and its emerging applications. New technologies can generate new applications. Conversely, applications can demand development of new technological capability. High-power microwave generating systems come with size and weight penalties and problems associated with the x-radiation and collection of the electron beam. Acceptance of these difficulties requires the identification of a set of applications for which high-power operation is either demanded or results in significant improvements in peRFormance. The authors identify the following applications, and discuss their requirements and operational issues: (1) High-energy RF acceleration; (2) Atmospheric modification (both to produce artificial ionospheric mirrors for radio waves and to save the ozone layer); (3) Radar; (4) Electronic warfare; and (5) Laser pumping. In addition, they discuss several applications requiring high average power than border on HPM, power beaming and plasma heating

  6. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  7. Research results for the applications of high power ion beams

    International Nuclear Information System (INIS)

    Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Zhang Jiasheng; Xu Ri; Peng Jianchang; Ren Shuqing; Li Peng; Yang Li; Huang Jianjun; Zhang Guoguang; Ouyang Xiaoping; Li Hongyu

    2003-01-01

    The results obtained in the theoretical and experimental studies for the application of high power ion beams in certain areas of nuclear physics and material science are reported. The preliminary experimental results of generating 6-7 MeV quasi-monoenergetic pulsed γ-rays with high power pulsed proton beams striking 19 F target on the Flash II accelerator are presented. By placing the target far enough downstream, the quasi-monoenergetic pulsed γ-rays can be discriminated experimentally from the diode Bremsstrahlung. This article also describes the other applications of high power ion beams and the preliminary experimental and theoretical results in simulation of soft X-ray thermal-mechanical effects, generation of high intense pulsed neutrons, equation of state and shock-wave physics experiments, surface modification and so on

  8. Bipolar one diode-one resistor integration for high-density resistive memory applications.

    Science.gov (United States)

    Li, Yingtao; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Ming; Xie, Hongwei; Zhang, Kangwei; Huo, Zongliang; Liu, Ming

    2013-06-07

    Different from conventional unipolar-type 1D-1R RRAM devices, a bipolar-type 1D-1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D-1R memory device not only achieves self-compliance resistive switching characteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications.

  9. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Banavoth, Murali; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan; AlYami, Noktan; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N.; Mohammed, Omar F.; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman

    2016-01-01

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  10. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun

    2016-08-16

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  11. HIGH REPETITION RATE MICROCHIP ER3+,YB3+:YAL3(BO34 DIODE-PUMPED LASER

    Directory of Open Access Journals (Sweden)

    K. N. Gorbachenya

    2012-01-01

    Full Text Available Diode-pumped passively Q-switched microchip Er,Yb:YAl3(BO34 laser for range-finding has been demonstrated. By using a Co2+:MgAl2O4 as a saturable absorber TEM00–mode Q-switched average output power of 315 mW was demonstrated at 1522 nm with pulse duration of 5 ns and pulse energy of 5,25 μJ at a repetition rate of 60 kHz.

  12. High power klystrons for efficient reliable high power amplifiers

    Science.gov (United States)

    Levin, M.

    1980-11-01

    This report covers the design of reliable high efficiency, high power klystrons which may be used in both existing and proposed troposcatter radio systems. High Power (10 kW) klystron designs were generated in C-band (4.4 GHz to 5.0 GHz), S-band (2.5 GHz to 2.7 GHz), and L-band or UHF frequencies (755 MHz to 985 MHz). The tubes were designed for power supply compatibility and use with a vapor/liquid phase heat exchanger. Four (4) S-band tubes were developed in the course of this program along with two (2) matching focusing solenoids and two (2) heat exchangers. These tubes use five (5) tuners with counters which are attached to the focusing solenoids. A reliability mathematical model of the tube and heat exchanger system was also generated.

  13. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

    Directory of Open Access Journals (Sweden)

    Wu Jiang

    2010-01-01

    Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

  14. FARADAY CUP AWARD: High Sensitivity Tune Measurement using Direct Diode Detection

    CERN Document Server

    Gasior, M

    2012-01-01

    Direct Diode Detection (3D) is a technique developed at CERN initially for the LHC tune measurement system, to reach a sensitivity allowing observation of beam betatron oscillations with amplitudes below a micrometre. In this technique simple peak diode detectors are used to convert short beam pulses from a beam position pick-up into slowly varying signals. Their DC components, constituting a large background related to beam offsets, are suppressed by series capacitors, while the small signals related to beam oscillations are passed to the subsequent stages for amplification and filtering. As the demodulated beam oscillation signals are already in the kHz range, their processing is simple and they can be digitised with high resolution audio ADCs. This paper presents the history as well as the adventures of the 3D development and prototyping, along with some technical details. It documents a very efficient collaboration between CERN and Brookhaven National Laboratory (BNL), with contributions from other labora...

  15. Graphene geometric diodes for terahertz rectennas

    International Nuclear Information System (INIS)

    Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

    2013-01-01

    We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

  16. Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose

    Science.gov (United States)

    Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

    2016-06-01

    Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future “internet of things” viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm2, a current rectification ratio up to 4 × 103 between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

  17. Pulsed high-power beams

    International Nuclear Information System (INIS)

    Reginato, L.L.; Birx, D.L.

    1988-01-01

    The marriage of induction linac technology with nonlinear magnetic modulators has produced some unique capabilities. It is now possible to produce short-pulse electron beams with average currents measured in amperes, at gradients approaching 1-MeV/m, and with power efficiencies exceeding 50%. This paper reports on a 70-MeV, 3-kA induction accelerator (ETA II) constructed at the Lawrence Livermore National Laboratory that incorporates the pulse technology concepts that have evolved over the past several years. The ETA II is a linear induction accelerator and provides a test facility for demonstration of the high-average-power components and high-brightness sources used in such accelerators. The pulse drive of the accelerator is based on state-of-the-art magnetic pulse compressors with very high peak-power capability, repetition rates exceeding 1 kHz, and excellent reliability

  18. High-Power ZBLAN Glass Fiber Lasers: Review and Prospect

    Directory of Open Access Journals (Sweden)

    Xiushan Zhu

    2010-01-01

    Full Text Available ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF, considered as the most stable heavy metal fluoride glass and the excellent host for rare-earth ions, has been extensively used for efficient and compact ultraviolet, visible, and infrared fiber lasers due to its low intrinsic loss, wide transparency window, and small phonon energy. In this paper, the historical progress and the properties of fluoride glasses and the fabrication of ZBLAN fibers are briefly described. Advances of infrared, upconversion, and supercontinuum ZBLAN fiber lasers are addressed in detail. Finally, constraints on the power scaling of ZBLAN fiber lasers are analyzed and discussed. ZBLAN fiber lasers are showing promise of generating high-power emissions covering from ultraviolet to mid-infrared considering the recent advances in newly designed optical fibers, beam-shaped high-power pump diodes, beam combining techniques, and heat-dissipating technology.

  19. 885-nm laser diode array pumped ceramic Nd:YAG master oscillator power amplifier system

    Science.gov (United States)

    Yu, Anthony W.; Li, Steven X.; Stephen, Mark A.; Seas, Antonios; Troupaki, Elisavet; Vasilyev, Aleksey; Conley, Heather; Filemyr, Tim; Kirchner, Cynthia; Rosanova, Alberto

    2010-04-01

    The objective of this effort is to develop more reliable, higher efficiency diode pumped Nd:YAG laser systems for space applications by leveraging technology investments from the DoD and other commercial industries. Our goal is to design, build, test and demonstrate the effectiveness of combining 885 nm laser pump diodes and the use of ceramic Nd:YAG for future flight missions. The significant reduction in thermal loading on the gain medium by the use of 885 nm pump lasers will improve system efficiency.

  20. High-efficiency white organic light-emitting diodes using thermally activated delayed fluorescence

    International Nuclear Information System (INIS)

    Nishide, Jun-ichi; Hiraga, Yasuhide; Nakanotani, Hajime; Adachi, Chihaya

    2014-01-01

    White organic light-emitting diodes (WOLEDs) have attracted much attention recently, aimed for next-generation lighting sources because of their high potential to realize high electroluminescence efficiency, flexibility, and low-cost manufacture. Here, we demonstrate high-efficiency WOLED using red, green, and blue thermally activated delayed fluorescence materials as emissive dopants to generate white electroluminescence. The WOLED has a maximum external quantum efficiency of over 17% with Commission Internationale de l'Eclairage coordinates of (0.30, 0.38).

  1. Simulative research on the expansion of cathode plasma in high-current electron beam diode

    International Nuclear Information System (INIS)

    Xu Qifu; Liu Lie

    2012-01-01

    The expansion of cathode plasma has long been recognized as a limiting factor in the impedance lifetime of high-current electron beam diode. Realistic modeling of such plasma is of great necessity in order to discuss the dynamics of cathode plasma. Using the method of particle-in-cell, the expansion of cathode plasma is simulated in this paper by a scaled-down diode model. It is found that the formation of cathode plasma increases the current density in the diode. This consequently leads to the decrease of the potential at plasma front. Once the current density has been increased to a certain value, the potential at plasma front would then be equal to or lower than the plasma potential. Then the ions would move towards the anode, and the expansion of cathode plasma is thereby formed. Different factors affecting the plasma expansion velocity are discussed in this paper. It is shown that the decrease of proton genatation rate has the benefit of reducing the plasma expansion velocity.

  2. Thermal investigation on high power dfb broad area lasers at 975 nm, with 60% efficiency

    Science.gov (United States)

    Mostallino, R.; Garcia, M.; Deshayes, Y.; Larrue, A.; Robert, Y.; Vinet, E.; Bechou, L.; Lecomte, M.; Parillaud, O.; Krakowski, M.

    2016-03-01

    The demand of high power diode lasers in the range of 910-980nm is regularly growing. This kind of device for many applications, such as fiber laser pumping [1], material processing [1], solid-state laser pumping [1], defense and medical/dental. The key role of this device lies in the efficiency (𝜂𝐸) of converting input electrical power into output optical power. The high value of 𝜂𝐸 allows high power level and reduces the need in heat dissipation. The requirement of wavelength stabilization with temperature is more obvious in the case of multimode 975nm diode lasers used for pumping Yb, Er and Yb/Er co-doped solid-state lasers, due to the narrow absorption line close to this wavelength. Such spectral width property (etching and re-growth process techniques, is achievable in high power diode lasers using optical feedback. This paper reports on the development of the diode laser structure and the process techniques required to write the gratings taking into account of the thermal dissipation and optical performances. Performances are particularly determined in terms of experimental electro-optical characterizations. One of the main objectives is to determine the thermal resistance of the complete assembly to ensure the mastering of the diode laser temperature for operating condition. The classical approach to determine junction temperature is based on the infrared thermal camera, the spectral measurement and the pulse electrical method. In our case, we base our measurement on the spectral measurement but this approach is not well adapted to the high power diodes laser studied. We develop a new measurement based on the pulse electrical method and using the T3STERequipment. This method is well known for electronic devices and LEDs but is weakly developed for the high power diodes laser. This crucial measurement compared to spectral one is critical for understand the thermal management of diode laser device and improve the structure

  3. Highly efficient red phosphorescent organic light-emitting diodes based on solution processed emissive layer

    International Nuclear Information System (INIS)

    Liu, Baiquan; Xu, Miao; Tao, Hong; Ying, Lei; Zou, Jianhua; Wu, Hongbin; Peng, Junbiao

    2013-01-01

    Highly efficient red phosphorescent organic polymer light-emitting diodes (PhOLEDs) were fabricated based on a solution-processed small-molecule host 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) by doping an iridium complex, tris(1-(2,6-dimethylphenoxy)-4-(4-chlorophenyl)phthalazine)iridium (III) (Ir(MPCPPZ) 3 ). A hole blocking layer 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBI) with a function of electron transport was thermally deposited onto the top of CBP layer. The diode with the structure of ITO/PEDOT:PSS (50 nm)/CBP:Ir(MPCPPZ) 3 (55 nm)/TPBI (30 nm)/Ba (4 nm)/Al (120 nm) showed an external quantum efficiency (QE ext ) of 19.3% and luminous efficiency (LE) of 18.3 cd/A at a current density of 0.16 mA/cm 2 , and Commission International de I'Eclairage (CIE) coordinates of (0.607, 0.375). It was suggested that the diodes using TPBI layer exhibited nearly 100% internal quantum efficiency and one order magnitude enhanced LE or QE ext efficiencies. -- Highlights: • Efficient red PhOLEDs based on a solution-processed small-molecule host were fabricated. • By altering volume ratio of chloroform/chlorobenzene solvent, we got best film quality of CBP. • EQE of the diode was 19.3%, indicating nearly 100% internal quantum yield was achieved

  4. Long pulse diode experiments

    Science.gov (United States)

    McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

    1990-10-01

    A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

  5. An online Vce measurement and temperature estimation method for high power IGBT module in normal PWM operation

    DEFF Research Database (Denmark)

    Ghimire, Pramod; de Vega, Angel Ruiz; Beczkowski, Szymon

    2014-01-01

    An on-state collector-emitter voltage (Vce) measurement and thereby an estimation of average temperature in space for high power IGBT module is presented while power converter is in operation. The proposed measurement circuit is able to measure both high and low side IGBT and anti parallel diode...

  6. High power fast ramping power supplies

    Energy Technology Data Exchange (ETDEWEB)

    Marneris,I.; Bajon, E.; Bonati, R.; Sandberg, J.; Roser, T.; Tsoupas, N.

    2009-05-04

    Hundred megawatt level fast ramping power converters to drive proton and heavy ion machines are under research and development at accelerator facilities in the world. This is a leading edge technology. There are several topologies to achieve this power level. Their advantages and related issues will be discussed.

  7. Plasma spectroscopy diagnostics in pulsed-power X-ray radiography diode research

    International Nuclear Information System (INIS)

    Maron, Yitzhak; Oliver, Bryan Velten; Portillo, Salvador; Johnston, Mark D.; Rose, David Vincent; Hahn, Kelly Denise; Schamiloglu, Edl; Welch, Dale R.; Droemer, Darryl W.; Rovang, Dean Curtis; Maenchen, John Eric

    2005-01-01

    Spectroscopic investigations in the visible and near UV are underway to study plasmas present in X-ray radiography diodes during the time of the electron beam propagation. These studies are being performed on the RITS-3 accelerator (5.25 MV and 120 kA) at Sandia National Laboratories using several diode configurations. The proper characterization of the plasmas occurring during the time of the X-ray pulse can lead to a greater understanding of diode behavior and X-ray spot size evolution. By studying these plasmas along with the use of selective dopants, insights into such phenomena as impedance collapse, thermal and non-thermal species behavior, charge and current neutralization, anode and cathode plasma formation and propagation, and beam/foil interactions, can be obtained. Information from line and continuum emission and absorption can give key plasma parameters such as temperatures, densities, charge states, and expansion velocities. This information is important for proper modeling and future predictive capabilities for the design and improvement of flash X-ray radiography diodes. Diagnostics include a gated, intensified multichannel plate camera combined with a 1 meter Czerny-Turner monochromator with a multi-fiber spectral input, allowing for both temporal and spatial resolution. Recent results are presented.

  8. Kilowatt average power 100 J-level diode pumped solid state laser

    Czech Academy of Sciences Publication Activity Database

    Mason, P.; Divoký, Martin; Ertel, K.; Pilař, Jan; Butcher, T.; Hanuš, Martin; Banerjee, S.; Phillips, J.; Smith, J.; De Vido, M.; Lucianetti, Antonio; Hernandez-Gomez, C.; Edwards, C.; Mocek, Tomáš; Collier, J.

    2017-01-01

    Roč. 4, č. 4 (2017), s. 438-439 ISSN 2334-2536 R&D Projects: GA MŠk LO1602; GA MŠk LM2015086 Institutional support: RVO:68378271 Keywords : diode-pumped * solid state * laser Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 7.727, year: 2016

  9. High-power, high-efficiency FELs

    International Nuclear Information System (INIS)

    Sessler, A.M.

    1989-04-01

    High power, high efficiency FELs require tapering, as the particles loose energy, so as to maintain resonance between the electromagnetic wave and the particles. They also require focusing of the particles (usually done with curved pole faces) and focusing of the electromagnetic wave (i.e. optical guiding). In addition, one must avoid transverse beam instabilities (primarily resistive wall) and longitudinal instabilities (i.e sidebands). 18 refs., 7 figs., 3 tabs

  10. Integrated Automotive High-Power LED-Lighting Systems in 3D-MID Technology

    NARCIS (Netherlands)

    Thomas, W.

    2014-01-01

    The growing energy consumption of lighting as well as rising luminous efficacies and -fluxes of high-power Light Emitting Diodes (LEDs) have contributed to the widespread use of LEDs in modern lighting systems. One of the most prominent users of the LED-technology is automotive (exterior) lighting.

  11. System for beaming power from earth to a high altitude platform

    Science.gov (United States)

    Friedman, Herbert W.; Porter, Terry J.

    2002-01-01

    Power is transmitted to a high altitude platform by an array of diode pumped solid state lasers each operated at a single range of laser wavelengths outside of infrared and without using adaptive optics. Each laser produces a beam with a desired arrival spot size. An aircraft avoidance system uses a radar system for automatic control of the shutters of the lasers.

  12. All-solid-state cw frequency-doubling Nd:YLiF4/LBO blue laser with 4.33 W output power at 454 nm under in-band diode pumping at 880 nm.

    Science.gov (United States)

    Lü, Yanfei; Zhang, Xihe; Cheng, Weibo; Xia, Jing

    2010-07-20

    We generated efficient blue laser output at 454 nm by intracavity frequency doubling of a continuous-wave (cw) diode-pumped Nd:YLiF(4) (Nd:YLF) laser at 908 nm based on the (4)F(3/2)-(4)I(9/2) transition. With 32.8 W of incident pump power at 880 nm and the frequency-doubling crystal LiB(3)O(5), a level as high as 4.33 W of cw output power at 454 nm is achieved, corresponding to an optical conversion efficiency of 13.2% with respect to the incident pump power. To the best of our knowledge, this is the first blue laser at 454 nm generated by intracavity frequency doubling of a diode-pumped Nd:YLF.

  13. Quasi-CW Laser Diode Bar Life Tests

    Science.gov (United States)

    Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

    1997-01-01

    NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

  14. High voltage power network construction

    CERN Document Server

    Harker, Keith

    2018-01-01

    This book examines the key requirements, considerations, complexities and constraints relevant to the task of high voltage power network construction, from design, finance, contracts and project management to installation and commissioning, with the aim of providing an overview of the holistic end to end construction task in a single volume.

  15. Investigations on the potential of a low power diode pumped Er:YAG laser system for oral surgery

    Science.gov (United States)

    Stock, Karl; Wurm, Holger; Hausladen, Florian; Wagner, Sophia; Hibst, Raimund

    2015-02-01

    Flash lamp pumped Er:YAG-lasers are used in clinical practice for dental applications successfully. As an alternative, several diode pumped Er:YAG laser systems (Pantec Engineering AG) become available, with mean laser power of 2W, 15W, and 30W. The aim of the presented study is to investigate the potential of the 2W Er:YAG laser system for oral surgery. At first an appropriate experimental set-up was realized with a beam delivery and both, a focusing unit for non-contact tissue cutting and a fiber tip for tissue cutting in contact mode. In order to produce reproducible cuts, the samples (porcine gingiva) were moved by a computer controlled translation stage. On the fresh samples cutting depth and quality were determined by light microscopy. Afterwards histological sections were prepared and microscopically analyzed regarding cutting depth and thermal damage zone. The experiments show that low laser power ≤ 2W is sufficient to perform efficient oral soft tissue cutting with cut depth up to 2mm (sample movement 2mm/s). The width of the thermal damage zone can be controlled by the irradiation parameters within a range of about 50μm to 110μm. In general, thermal injury is more pronounced using fiber tips in contact mode compared to the focused laser beam. In conclusion the results reveal that even the low power diode pumped Er:YAG laser is an appropriate tool for oral surgery.

  16. Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

    Science.gov (United States)

    Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

    2012-03-12

    The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

  17. High Temperature, High Power Piezoelectric Composite Transducers

    Science.gov (United States)

    Lee, Hyeong Jae; Zhang, Shujun; Bar-Cohen, Yoseph; Sherrit, StewarT.

    2014-01-01

    Piezoelectric composites are a class of functional materials consisting of piezoelectric active materials and non-piezoelectric passive polymers, mechanically attached together to form different connectivities. These composites have several advantages compared to conventional piezoelectric ceramics and polymers, including improved electromechanical properties, mechanical flexibility and the ability to tailor properties by using several different connectivity patterns. These advantages have led to the improvement of overall transducer performance, such as transducer sensitivity and bandwidth, resulting in rapid implementation of piezoelectric composites in medical imaging ultrasounds and other acoustic transducers. Recently, new piezoelectric composite transducers have been developed with optimized composite components that have improved thermal stability and mechanical quality factors, making them promising candidates for high temperature, high power transducer applications, such as therapeutic ultrasound, high power ultrasonic wirebonding, high temperature non-destructive testing, and downhole energy harvesting. This paper will present recent developments of piezoelectric composite technology for high temperature and high power applications. The concerns and limitations of using piezoelectric composites will also be discussed, and the expected future research directions will be outlined. PMID:25111242

  18. High Power Electron Accelerator Prototype

    CERN Document Server

    Tkachenko, Vadim; Cheskidov, Vladimir; Korobeynikov, G I; Kuznetsov, Gennady I; Lukin, A N; Makarov, Ivan; Ostreiko, Gennady; Panfilov, Alexander; Sidorov, Alexey; Tarnetsky, Vladimir V; Tiunov, Michael A

    2005-01-01

    In recent time the new powerful industrial electron accelerators appear on market. It caused the increased interest to radiation technologies using high energy X-rays due to their high penetration ability. However, because of low efficiency of X-ray conversion for electrons with energy below 5 MeV, the intensity of X-rays required for some industrial applications can be achieved only when the beam power exceeds 300 kW. The report describes a project of industrial electron accelerator ILU-12 for electron energy up to 5 MeV and beam power up to 300 kW specially designed for use in industrial applications. On the first stage of work we plan to use the existing generator designed for ILU-8 accelerator. It is realized on the GI-50A triode and provides the pulse power up to 1.5-2 MW and up to 20-30 kW of average power. In the report the basic concepts and a condition of the project for today are reflected.

  19. Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes

    Science.gov (United States)

    Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori; Tadano, Hiroshi

    2014-01-01

    Neutron-induced single-event burnouts (SEBs) of silicon carbide (SiC) power diodes have been investigated by white neutron irradiation experiments and transient device simulations. It was confirmed that a rapid increase in lattice temperature leads to formation of crown-shaped aluminum and cracks inside the device owing to expansion stress when the maximum lattice temperature reaches the sublimation temperature. SEB device simulation indicated that the peak lattice temperature is located in the vicinity of the n-/n+ interface and anode contact, and that the positions correspond to a hammock-like electric field distribution caused by the space charge effect. Moreover, the locations of the simulated peak lattice temperature agree closely with the positions of the observed destruction traces. Furthermore, it was theoretically demonstrated that the period of temperature increase of a SiC power device is two orders of magnitude less than that of a Si power device, using a thermal diffusion equation.

  20. Solid state pump lasers with high power and high repetition rate

    International Nuclear Information System (INIS)

    Oba, Masaki; Kato, Masaaki; Arisawa, Takashi

    1995-01-01

    We built a laser diode pumped solid state green laser (LDPSSGL) rated at high repetition rate. Two laser heads are placed in one cavity with a rotator in between to design to avoid thermal lensing and thermal birefringence effect. Although average green laser power higher than 10 W was obtained at 1 kHz repetition rate with pulse width of 20-30 nsec, the beam quality was so much deteriorated that energy efficiency was as low as 2 %. Learning from this experience that high power oscillator causes a lot of thermal distortion not only in the laser rod but also in the Q-switch device, we proceeded to built a oscillator/amplifier system. A low power oscillator has a slab type crystal in the cavity. As a result spatial distribution of laser power was extremely improved. As we expect that the high repetition rate solid state laser should be CW operated Q-switch type laser from the view point of lifetime of diode lasers, a conventional arc lamp pumped CW Q-switch green YAG laser of which the repetition rate is changeable from 1 kHz to 5 kHz and the pulse width is 250-570 nsec was also tested to obtain pumping characteristics of a dye laser as a function of power, pulse width etc., and dye laser pulse width of 100-130 nsec were obtained. (author)

  1. Recent developments in high average power driver technology

    International Nuclear Information System (INIS)

    Prestwich, K.R.; Buttram, M.T.; Rohwein, G.J.

    1979-01-01

    Inertial confinement fusion (ICF) reactors will require driver systems operating with tens to hundreds of megawatts of average power. The pulse power technology that will be required to build such drivers is in a primitive state of development. Recent developments in repetitive pulse power are discussed. A high-voltage transformer has been developed and operated at 3 MV in a single pulse experiment and is being tested at 1.5 MV, 5 kj and 10 pps. A low-loss, 1 MV, 10 kj, 10 pps Marx generator is being tested. Test results from gas-dynamic spark gaps that operate both in the 100 kV and 700 kV range are reported. A 250 kV, 1.5 kA/cm 2 , 30 ns electron beam diode has operated stably for 1.6 x 10 5 pulses

  2. Dynamics of a relativistic electron beam in a high-current diode with a knife-edge cathode

    International Nuclear Information System (INIS)

    Babykin, V.M.; Gordeev, A.V.; Golovin, G.T.; Korolev, V.D.; Kopchikov, A.V.; Tulupov, M.V.; Chernenko, A.S.; Shuvaev, V.Yu.

    1991-01-01

    For a number of practical applications, e.g., producing discharges in large volumes in order to pump gas lasers and for short x-ray pulses, it is necessary to generate electron beams in megamp range with electron energies from hundreds of kilovolts to several megavolts. It has been possible to obtain high currents (I ± 1 MA) by using diodes with knife-edge cathodes. Knife-edge diodes have an important advantage over the parapotential type because the ion current in them comprises a relatively small fraction of the total current. This is because the electron path in the accelerating gap of knife-edge diodes is quite short in comparison with that in high-current parapotential diodes. From the point of view of applying ribbon-shaped or narrow electron beams, the important problems are in measuring the current-voltage characteristics of the diodes and determining the dynamics of the energy spectrum and the angular spread of the electrons. The generation of an electron beam with a current ∼130 kA and pulse length ∼60 ns is studied. The current-voltage characteristics of knife-edge diodes with various geometries, the dynamics of the angular spread, and the beam structure are studied. As a result of the study of the REB dynamics it is found that the operation of the diode with these experiments can be approximated by a proposed formula which includes the finite thickness of the knife-edge cathode and the motion of the plasma and ions in the discharge gap. Breaking up of the beam into individual current-carrying channels is observed with the characteristic scale ∼1-2 mm. It is noted that for the diode geometry with a knife-edge cathode, when the magnetic field changes sign and passes through zero, an instability can exist which is analogous to the dissipative tearing instability

  3. Development of a Highly Efficient Hybrid White Organic-Light-Emitting Diode with a Single Emission Layer by Solution Processing.

    Science.gov (United States)

    Wu, Jun-Yi; Chen, Show-An

    2018-02-07

    We use a mixed host, 2,6-bis[3-(carbazol-9-yl)phenyl]pyridine blended with 20 wt % tris(4-carbazoyl-9-ylphenyl)amine, to lower the hole-injection barrier, along with the bipolar and high-photoluminescence-quantum-yield (Φ p = 84%), blue thermally activated delay fluorescence (TADF) material of 9,9-dimethyl-9,10-dihydroacridine-2,4,6-triphenyl-1,3,5-triazine (DMAC-TRZ) as a blue dopant to compose the emission layer for the fabrication of a TADF blue organic-light-emitting diode (BOLED). The device is highly efficient with the following performance parameters: maximum brightness (B max ) = 57586 cd/m 2 , maximum current efficiency (CE max ) = 35.3 cd/A, maximum power efficiency (PE max ) = 21.4 lm/W, maximum external quantum efficiency (EQE max ) = 14.1%, and CIE coordinates (0.18, 0.42). This device has the best performance recorded among the reported solution-processed TADF BOLEDs and has a low efficiency roll-off: at brightness values of 1000 and 5000 cd/m 2 , its CEs are close, being 35.1 and 30.1 cd/A, respectively. Upon further doping of the red phosphor Ir(dpm)PQ 2 (emission peak λ max = 595 nm) into the blue emission layer, we obtained a TADF-phosphor hybrid white organic-light-emitting diode (T-P hybrid WOLED) with high performance: B max = 43594 cd/m 2 , CE max = 28.8 cd/A, PE max = 18.1 lm/W, and CIE coordinates (0.38, 0.44). This B max = 43594 cd/m 2 is better than that of the vacuum-deposited WOLED with a blue TADF emitter, 10000 cd/m 2 . This is also the first report on a T-P hybrid WOLED with a solution-processed emitting layer.

  4. Efficient high-peak-power and high-repetition-rate eye-safe laser using an intracavity KTP OPO

    International Nuclear Information System (INIS)

    Guo, J; Jiao, Z X; Wang, B; He, G Y

    2015-01-01

    An efficient high-peak-power and high-repetition-rate intracavity KTP optical parametric oscillator pumped by a Q-switched Nd:YVO 4 laser is demonstrated. We achieved 1.5 W output power of 1.5 μm at 10 kHz repetition rate with the pulse duration of 6 ns. The maximum peak power of 25 kW and the maximum pulse energy of 150 μJ have been obtained. The maximum conversion efficiency of 9.5% is achieved with respect to a laser diode power of 10.5 W. (paper)

  5. Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

    International Nuclear Information System (INIS)

    Wang Yongshun; Rui Li; Adnan Ghaffar; Wang Zaixing; Liu Chunjuan

    2015-01-01

    In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode, a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation, NiPt60 sputtering, silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6–11.4 μm and (2.2–2.4) × 10 15 cm −3 doping concentration. The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C, that is 50 °C higher than that of the traditional one; the reverse voltage capacity V R can reach 112 V, that is 80 V higher than that of the traditional one; the leakage current is only 2 μA and the forward conduction voltage drop is V F = 0.71 V at forward current I F = 3 A. (semiconductor devices)

  6. Cryogenic cooling for high power laser amplifiers

    Directory of Open Access Journals (Sweden)

    Perin J.P.

    2013-11-01

    Full Text Available Using DPSSL (Diode Pumped Solid State Lasers as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz. The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K–170 K with a heat flux of 1 MW*m−2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

  7. Pyridine substituted spirofluorene derivative as an electron transport material for high efficiency in blue organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Soon Ok; Yook, Kyoung Soo; Lee, Jun Yeob, E-mail: leej17@dankook.ac.k

    2010-11-01

    The quantum efficiency of blue fluorescent organic light-emitting diodes was enhanced by 20% using a pyridine substituted spirofluorene-benzofluorene derivative as an electron transport material. 2',7'-Di(pyridin-3-yl)spiro[benzofluorene-7,9'-fluorene] (SPBP) was synthesized and it was used as the electron transport material to block the hole leakage from the emitting layer. The improvement of the quantum efficiency and power efficiency of the blue fluorescent organic light-emitting diodes using the SPBP was investigated.

  8. Effect of high-frequency near-infrared diode laser irradiation on periodontal tissues during experimental tooth movement in rats.

    Science.gov (United States)

    Gunji, Hidemi; Kunimatsu, Ryo; Tsuka, Yuji; Yoshimi, Yuki; Sumi, Keisuke; Awada, Tetsuya; Nakajima, Kengo; Kimura, Aya; Hiraki, Tomoka; Hirose, Naoto; Yanoshita, Makoto; Tanimoto, Kotaro

    2018-02-05

    Tooth movement during orthodontic treatment is associated with bone neoplasticity and bone resorption on the tension and pressure sides. Previous clinical studies have suggested that low-power laser irradiation can accelerate tooth movement during orthodontic treatment, although the underlying mechanism remains unclear. In this study, we used a high-frequency near-infrared diode laser that generates less heat and examined the histologic changes in periodontal tissue during experimental tooth movement with laser irradiation. A nickel-titanium closed coil was mounted between the maxillary left side first molar and incisor of rats to model experimental tooth movement. The laser-irradiation and the control groups were set, and the amount of movement of the first molar on 7th and 14th days after the start of pulling of the first molar tooth on the maxillary left was measured by three-dimensional analysis of µCT. After tooth movement, tissue samples from the mesial and tension sides were collected, and successive horizontal sections were prepared and examined using hematoxylin-eosin and TRAP staining and immunohistochemical staining for RANKL, OPG, ALP, and proliferating cell nuclear antigen (PCNA). Changes in tissue temperature following laser irradiation were also examined. Laser irradiation significantly increased tooth movement compared with non-irradiated controls. Histologic staining of the pressure-side mesial root in laser-irradiated rats revealed enhanced RANKL expression and increased numbers of TRAP-positive cells compared with controls. By contrast, on the tension side, laser irradiation led to increased expression of ALP and PCNA. These data indicate that high-frequency near-infrared diode laser irradiation on the pressure side upregulates RANKL expression and accelerates osteoclast differentiation, facilitating bone resorption, whereas bone formation is induced on the tension side. This study demonstrates that high-frequency near-infrared diode laser

  9. Design of pulsed laser diode drive power for ZY3(02) laser altimeter

    Science.gov (United States)

    Feng, Wen; Li, Mingshan; Meng, Peibei; Yan, Fanjiang; Li, Xu; Wang, Chunhui

    2017-11-01

    Solid laser pumped by semiconductor laser has the large value in the area of space laser technology, because of the advantages of high efficiency, small volume and long life. As the indispensable component of laser, laser power is also very important. Combined with ZY3(02) laser altimeter project, a high voltage(0-300V), high current(0-80A), long pulse width(0-230us) and high precision temperature semiconductor laser power is developed. IGBT is applied in the driving circuit as the switch to provide a current pulse for LD. The heating or cooling capacity of TEC is controlled by PID compensation circuit quickly adjusts the duty cycle of the UC1637 PWM signal, to realize the high accuracy controlling of LD working temperature. The tests in the external ambient temperature of 5°C, 20°C, 30°C show that the LD current pulse is stable and the stability of LD working temperature up to +/-0.1°C around the set point temperature, which ensure the highly stable operation of DPL.

  10. Diode laser (980nm) cartilage reshaping

    Science.gov (United States)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  11. Fast-opening vacuum switches for high-power inductive energy storage

    International Nuclear Information System (INIS)

    Cooperstein, G.

    1988-01-01

    The subject of fast-opening vacuum switches for high-power inductive energy storage is emerging as an exciting new area of plasma science research. This opening switch technology, which generally involves the use of plasmas as the switching medium, is key to the development of inductive energy storage techniques for pulsed power which have a number of advantages over conventional capacitive techniques with regard to cost and size. This paper reviews the state of the art in this area with emphasis on applications to inductive storage pulsed power generators. Discussion focuses on fast-opening vacuum switches capable of operating at high power (≥10 12 W). These include plasma erosion opening switches, ion beam opening switches, plasma filled diodes, reflex diodes, plasma flow switches, and other novel vacuum opening switches

  12. BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

    CERN Document Server

    Ravotti, F; Moll, M; Saigne, F

    2008-01-01

    The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

  13. Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

    International Nuclear Information System (INIS)

    Cho, Joong-yeon; Park, Sang-Jun; Ahn, Jinho; Lee, Heon

    2014-01-01

    In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%

  14. Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Joong-yeon; Park, Sang-Jun [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Material Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Heon, E-mail: heonlee@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2014-11-03

    In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%.

  15. DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

    Directory of Open Access Journals (Sweden)

    Nikolai A. Poklonski

    2016-06-01

    Full Text Available p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111 plane of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5×1013 cm−3. The diodes were irradiated with 250 MeV krypton ions. The irradiation fluence was 108 cm−2. Deep-level transient spectroscopy (DLTS was used to examine the defects induced by high energy krypton ion implantation. The DLTS spectra were recorded at a frequency of 1 MHz in the 78–290 K temperature range. The capacity-voltage characteristics have been measured at a reverse bias voltage from 0 to −19 V at a frequency of 1 MHz. We show that the main irradiation-induced defects are A-centers and divacancies. The behavior of DLTS spectra in the 150–260 K temperature range depends essentially on the emission voltage Ue. The variation of Ue allows us to separate the contributions of different defects into the DLTS spectrum in the 150–260 K temperature range. We show that, in addition to A-centers and divacancies, irradiation produces multivacancy complexes with the energy level Et = Ec−(0.5±0.02 eV and an electron capture cross section of ~4×10–13 cm2.

  16. Tomographic Particle Image Velocimetry using Pulsed, High Power LED Volume Illumination

    OpenAIRE

    Buchmann, N. A.; Willert, C.; Soria, J.

    2011-01-01

    This paper investigates the use of high-power light emitting diode (LED) illumination in Particle Image Velocimetry (PIV) as an alternative to traditional laser-based illumination. The solid-state LED devices can provide averaged radiant power in excess of 10W and by operating the LEDs with short current pulses, considerably higher than in continuous operation, light pulses of sufficient energy suitable for imaging micron-sized particles can be generated. The feasibility of this LED-based ill...

  17. High power laser source for space applications. Phase 1 study: Executive summary

    Science.gov (United States)

    1986-07-01

    A study to design a high power laser diode, to manufacture samples, to test them, and to identify the problems raised by the manufacture of such power sources in order to evaluate the effort required to overcome the difficulties in view of a component qualification was initiated. Theoretical modeling, manufacturing and test of samples, and environmental evaluation were completed. To obtain 200 mW monomode, a reversed CSP structure manufactured by chemical vapor deposition is recommended.

  18. Custom ceramic microchannel-cooled array for high-power fiber-coupled application

    Science.gov (United States)

    Junghans, Jeremy; Feeler, Ryan; Stephens, Ed

    2018-03-01

    A low-SWaP (Size, Weight and Power) diode array has been developed for a high-power fiber-coupled application. High efficiency ( 65%) diodes enable high optical powers while minimizing thermal losses. A large amount of waste heat is still generated and must be extracted. Custom ceramic microchannel-coolers (MCCs) are used to dissipate the waste heat. The custom ceramic MCC was designed to accommodate long cavity length diodes and micro-lenses. The coolers provide similar thermal performance as copper MCCs however they are not susceptible to erosion and can be cooled with standard filtered water. The custom ceramic micro-channel cooled array was designed to be a form/fit replacement for an existing copperbased solution. Each array consisted of three-vertically stacked MCCs with 4 mm CL, 976 nm diodes and beamshaping micro-optics. The erosion and corrosion resistance of ceramic array is intended to mitigate the risk of copperbased MCC corrosion failures. Elimination of the water delivery requirements (pH, resistivity and dissolved oxygen control) further reduces the system SWaP while maintaining reliability. The arrays were fabricated and fully characterized. This work discusses the advantages of the ceramic MCC technology and describes the design parameters that were tailored for the fiber-coupled application. Additional configuration options (form/fit, micro-lensing, alternate coolants, etc.) and on-going design improvements are also discussed.

  19. Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

    Science.gov (United States)

    Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

    2018-06-01

    Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

  20. Extraction of high-intensity ion beams from a laser plasma by a pulsed spherical diode

    Directory of Open Access Journals (Sweden)

    Yoshiyuki Oguri

    2005-06-01

    Full Text Available High-current Cu^{+} ion beams were extracted from a laser-produced plasma using a pulsed high-voltage multiaperture diode driven by an induction cavity. The amplitude and the duration of the extraction voltage were 130 kV and 450 ns, respectively. During the extraction, explosive beam divergence due to the strong space-charge force was suppressed by the focusing action of the gap between concentric hemispheres. Modulation of the extracted beam flux due to the plasma prefill in the gap has been eliminated by using a biased control grid put on the anode holes. By means of this extraction scheme we obtained a rectangular beam pulse with a rise time as short as ≈100  ns. The beam current behind the cathode was limited to ≈0.1   A, owing to space-charge effects, as well as to poor geometrical transmission through the cathode sphere. From the measurement of the extracted beam current density distribution along the beam axis and the beam profile measurement, we found a beam waist slightly downstream of the spherical center of the diode structure. The measured beam behavior was consistent with numerical results obtained via a 3D particle code. No serious degradation of the beam emittance was observed for the grid-controlled extraction scheme.

  1. A car-borne highly sensitive near-IR diode-laser methane detector

    International Nuclear Information System (INIS)

    Berezin, A G; Ershov, Oleg V; Shapovalov, Yu P

    2003-01-01

    A highly sensitive automated car-borne detector for measuring methane concentration in real time is designed, developed and tested under laboratory and field conditions. Measurements were made with the help of an uncooled tunable near-IR 1.65-μm laser diode. The detector consists of a multipass optical cell with a 45-m long optical path and a base length of 0.5 m. The car-borne detector is intended for monitoring the methane concentration in air from the moving car to reveal the leakage of domestic gas. The sensitivity limit (standard deviation) under field conditions is 1 ppm (20 ppb under laboratory conditions) for a measuring time of 0.4 s. The measuring technique based on the detection of a single methane line ensured a high selectivity of methane detector relative to other gases. The methane detector can be easily modified for measuring other simple-molecule gases (e.g., CO, CO 2 , HF, NO 2 , H 2 O) by replacing the diode laser and varying the parameters of the control program. (special issue devoted to the memory of academician a m prokhorov)

  2. A New Approach to High Efficincy in Isolated Boost Converters for High-Power Low-Voltage Fuel Cell Apllications

    DEFF Research Database (Denmark)

    Nymand, Morten; Andersen, Michael A. E.

    2008-01-01

    A new low-leakage-inductance low-resistance design approach to low-voltage high-power isolated boost converters is presented. Very low levels of parasitic circuit inductances are achieved by optimizing transformer design and circuit lay-out. Primary side voltage clamp circuits can be eliminated...... by the use of power MOSFETs fully rated for repetitive avalanche. Voltage rating of primary switches can now be reduced, significantly reducing switch on-state losses. Finally, silicon carbide rectifying diodes allow fast diode turn-off, further reducing losses. Test results from a 1.5 kW full-bridge boost...... converter verify theoretical analysis and demonstrate very high efficiency. Worst case efficiency, at minimum input voltage maximum power, is 96.8 percent and maximum efficiency reaches 98 percent....

  3. High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

    Science.gov (United States)

    Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

    2014-01-01

    A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

  4. High average power solid state laser power conditioning system

    International Nuclear Information System (INIS)

    Steinkraus, R.F.

    1987-01-01

    The power conditioning system for the High Average Power Laser program at Lawrence Livermore National Laboratory (LLNL) is described. The system has been operational for two years. It is high voltage, high power, fault protected, and solid state. The power conditioning system drives flashlamps that pump solid state lasers. Flashlamps are driven by silicon control rectifier (SCR) switched, resonant charged, (LC) discharge pulse forming networks (PFNs). The system uses fiber optics for control and diagnostics. Energy and thermal diagnostics are monitored by computers

  5. Filtered x-ray diode diagnostics fielded on the Z-accelerator for source power measurements

    International Nuclear Information System (INIS)

    Chandler, G.A.; Deeney, C.; Cuneo, M.

    1998-01-01

    Filtered x-ray diode, (XRD), detectors are used as primary radiation flux diagnostics on Sandia's Z-accelerator, which generates nominally a 200 TW, 2 MJ, x-ray pulse. Given such flux levels and XRD sensitivities the detectors are being fielded 23 meters from the source. The standard diagnostic setup and sensitivities are discussed. Vitreous carbon photocathodes are being used to reduce the effect of hydrocarbon contamination present in the Z-machine vacuum system. Nevertheless pre- and post-calibration data taken indicate spectrally dependent changes in the sensitivity of these detectors by up to factors up to 2 or 3

  6. Novel power MOSFET-based expander for high frequency ultrasound systems.

    Science.gov (United States)

    Choi, Hojong; Shung, K Kirk

    2014-01-01

    The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4% and 240% compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. Copyright © 2013 Elsevier B.V. All rights reserved.

  7. Next generation diode lasers with enhanced brightness

    Science.gov (United States)

    Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

    2018-02-01

    High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

  8. High power microwave source development

    Science.gov (United States)

    Benford, James N.; Miller, Gabriel; Potter, Seth; Ashby, Steve; Smith, Richard R.

    1995-05-01

    The requirements of this project have been to: (1) improve and expand the sources available in the facility for testing purposes and (2) perform specific tasks under direction of the Defense Nuclear Agency about the applications of high power microwaves (HPM). In this project the HPM application was power beaming. The requirements of this program were met in the following way: (1) We demonstrated that a compact linear induction accelerator can drive HPM sources at repetition rates in excess of 100 HZ at peak microwave powers of a GW. This was done for the relativistic magnetron. Since the conclusion of this contract such specifications have also been demonstrated for the relativistic klystron under Ballistic Missile Defense Organization funding. (2) We demonstrated an L band relativistic magnetron. This device has been used both on our single pulse machines, CAMEL and CAMEL X, and the repetitive system CLIA. (3) We demonstrated that phase locking of sources together in large numbers is a feasible technology and showed the generation of multigigawatt S-band radiation in an array of relativistic magnetrons.

  9. High-power pulsed lasers

    International Nuclear Information System (INIS)

    Holzrichter, J.F.

    1980-01-01

    The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization

  10. Cavity-enhanced resonant photoacoustic spectroscopy with optical feedback cw diode lasers: A novel technique for ultratrace gas analysis and high-resolution spectroscopy.

    Science.gov (United States)

    Hippler, Michael; Mohr, Christian; Keen, Katherine A; McNaghten, Edward D

    2010-07-28

    Cavity-enhanced resonant photoacoustic spectroscopy with optical feedback cw diode lasers (OF-CERPAS) is introduced as a novel technique for ultratrace gas analysis and high-resolution spectroscopy. In the scheme, a single-mode cw diode laser (3 mW, 635 nm) is coupled into a high-finesse linear cavity and stabilized to the cavity by optical feedback. Inside the cavity, a build-up of laser power to at least 2.5 W occurs. Absorbing gas phase species inside the cavity are detected with high sensitivity by the photoacoustic effect using a microphone embedded in the cavity. To increase sensitivity further, coupling into the cavity is modulated at a frequency corresponding to a longitudinal resonance of an organ pipe acoustic resonator (f=1.35 kHz and Q approximately 10). The technique has been characterized by measuring very weak water overtone transitions near 635 nm. Normalized noise-equivalent absorption coefficients are determined as alpha approximately 4.4x10(-9) cm(-1) s(1/2) (1 s integration time) and 2.6x10(-11) cm(-1) s(1/2) W (1 s integration time and 1 W laser power). These sensitivities compare favorably with existing state-of-the-art techniques. As an advantage, OF-CERPAS is a "zero-background" method which increases selectivity and sensitivity, and its sensitivity scales with laser power.

  11. High-speed and efficient silicon modulator based on forward-biased pin diodes

    Directory of Open Access Journals (Sweden)

    Suguru eAkiyama

    2014-11-01

    Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

  12. Blue 450nm high power semiconductor continuous wave laser bars exceeding rollover output power of 80W

    Science.gov (United States)

    König, H.; Lell, A.; Stojetz, B.; Ali, M.; Eichler, C.; Peter, M.; Löffler, A.; Strauss, U.; Baumann, M.; Balck, A.; Malchus, J.; Krause, V.

    2018-02-01

    Industrial material processing like cutting or welding of metals is rather energy efficient using direct diode or diode pumped solid state lasers. However, many applications cannot be addressed by established infrared laser technology due to fundamental material properties of the workpiece: For example materials like copper or gold have too low absorption in the near infrared wavelength range to be processed efficiently by use of existing high power laser systems. The huge interest to enable high power kW systems with more suitable wavelengths in the blue spectral range triggered the German funded research project 'BLAULAS': Therein the feasibility and capability of CW operating high power laser bars based on the GaN material system was investigated by Osram and Laserline. High performance bars were enabled by defeating fundamental challenges like material quality as well as the chip processes, both of which differ significantly from well-known IR laser bars. The research samples were assembled on actively cooled heat sinks with hard solder technology. For the first time an output power of 98W per bar at 60A drive current was achieved. Conversion efficiency as high as 46% at 50W output power was demonstrated.

  13. Intense pulsed light-ion beam generated by planar type self-magnetically insulated diode

    International Nuclear Information System (INIS)

    Yoshikawa, T.; Masugata, K.; Ito, M.; Matsui, M.; Yatsui, K.

    1984-01-01

    New type of ion diode named ''Planar Type Self-Magnetically Insulated Diode'' (PSID) has been developed. By using a 1.5-mm-thick-polyethylene sheet as an anode surface, we have obtained Vsub(d) (diode voltage) -- 886 kV, Isub(d) (diode current) -- 180 kA, and Isub(i) (net ion current) -- 52 kA, yielding the diode efficiency of ion production to be -- 30 %. Multiple-shots operation (more than 40 shots) has been possible with good reproducibility in such a relatively high powers above. (author)

  14. High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

    2014-03-03

    We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

  15. Diode pumped solid state laser by two diodes

    International Nuclear Information System (INIS)

    Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

    1995-01-01

    A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

  16. Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate the feasibility of using vertical GaN Schottky diodes for high-power rectification...

  17. Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate prototype vertical GaN Schottky diodes for high-power rectification at W-band. To...

  18. Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

    Energy Technology Data Exchange (ETDEWEB)

    Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

    2000-04-01

    Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

  19. Investigation of Self-injection Locked Visible Laser Diodes for High Bit-rate Visible Light Communication

    KAUST Repository

    Shamim, Md. Hosne Mobarok; Shemis, Mohamed; Shen, Chao; Oubei, Hassan M.; Ng, Tien Khee; Ooi, Boon S.; Khan, Mohammed Zahed Mustafa

    2018-01-01

    -mode-suppression-ratio was considerably increased in all the cases, reaching as high as ~20 dB in self-injection locked blue laser diode, thus enabling a close to single mode operation. This work paves the way for attaining high speed optical wireless communications by overcoming

  20. The waffle: a new photovoltaic diode geometry having high efficiency and backside contacts

    DEFF Research Database (Denmark)

    Leistiko, Otto

    1994-01-01

    By employing anisotropic etching techniques and advanced device processing it is possible to micromachine new types of mechanical, electronic, and optical devices of silicon, which have unique properties. In this paper the characteristics of a new type of photovoltaic diode fabricated employing...... these processing techniques are described. This novel device has not only high efficiency, but also has both contacts placed on the backside of the cell. The first devices which are only 50 mm in diameter are of relatively good quality with low leakage currents (nA), high breakdown voltages (80 V), and low series...... resistance (mohms). The measured efficiencies at AM 1.5 lie between 12 to 15% with short circuit currents of 25-30 mA/cm2, and open circuit voltages of 0.58-0.6 V...