High power CW output from low confinement asymmetric structure diode laser

NARCIS (Netherlands)

Iordache, G.; Buda, M.; Acket, G.A.; Roer, van de T.G.; Kaufmann, L.M.F.; Karouta, F.; Jagadish, C.; Tan, H.H.

1999-01-01

High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 µm wide stripe 1-3 mm long diode lasers were studied. 1.8 W

High-power non linear frequency converted laser diodes

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Andersen, Peter E.; Hansen, Anders Kragh

2015-01-01

We present different methods of generating light in the blue-green spectral range by nonlinear frequency conversion of tapered diode lasers achieving state-of-the-art power levels. In the blue spectral range, we show results using single-pass second harmonic generation (SHG) as well as cavity enh...... enhanced sum frequency generation (SFG) with watt-level output powers. SHG and SFG are also demonstrated in the green spectral range as a viable method to generate up to 4 W output power with high efficiency using different configurations....

High average power diode pumped solid state lasers for CALIOPE

International Nuclear Information System (INIS)

Comaskey, B.; Halpin, J.; Moran, B.

1994-07-01

Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

Numerical simulations of novel high-power high-brightness diode laser structures

Science.gov (United States)

Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

2001-07-01

One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

High-power laser diodes with high polarization purity

Science.gov (United States)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

High Power Ga2O3-based Schottky Diode, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR Program will develop a new generation of radiation hard high-power high-voltage Ga2O3-based Schottky diode, which is suitable for applications in the space...

High-power fiber-coupled 100W visible spectrum diode lasers for display applications

Science.gov (United States)

Unger, Andreas; Küster, Matthias; Köhler, Bernd; Biesenbach, Jens

2013-02-01

Diode lasers in the blue and red spectral range are the most promising light sources for upcoming high-brightness digital projectors in cinemas and large venue displays. They combine improved efficiency, longer lifetime and a greatly improved color space compared to traditional xenon light sources. In this paper we report on high-power visible diode laser sources to serve the demands of this emerging market. A unique electro-optical platform enables scalable fiber coupled sources at 638 nm with an output power of up to 100 W from a 400 μm NA0.22 fiber. For the blue diode laser we demonstrate scalable sources from 5 W to 100 W from a 400 μm NA0.22 fiber.

Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

Science.gov (United States)

Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

2016-03-01

Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

2004-01-01

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

High-power direct diode laser output by spectral beam combining

Science.gov (United States)

Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao

2018-03-01

We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

Electron diode oscillators for high-power RF generation

International Nuclear Information System (INIS)

Humphries, S.

1989-01-01

Feedback oscillators have been used since the invention of the vacuum tube. This paper describes the extension of these familiar circuits to the regime of relativistic electron beam diodes. Such devices have potential application for the generation of high power RF radiation in the range 50-250 MHz, 1-10 GW with 20-60% conversion efficiency. This paper reviews the theory of the oscillator and the results of a design study. Calculations for the four-electrode diode with EGUN and EBQ show that good modulations of 30 kA electron beam at 600 kV can be achieved with moderate field stress on the electrodes. Conditions for oscillation have been studied with an in-house transmission line code. A design for a 7.5 GW oscillator at 200 MHz with 25% conversion efficiency is presented

Wavelength switchable high-power diode-side-pumped rod Tm:YAG Laser around 2µm.

Science.gov (United States)

Wang, Caili; Du, Shifeng; Niu, Yanxiong; Wang, Zhichao; Zhang, Chao; Bian, Qi; Guo, Chuan; Xu, Jialin; Bo, Yong; Peng, Qinjun; Cui, Dafu; Zhang, Jingyuan; Lei, Wenqiang; Xu, Zuyan

2013-03-25

We report a high-power diode-side-pumped rod Tm:YAG laser operated at either 2.07 or 2.02 µm depending on the transmission of pumped output coupler. The laser yields 115W of continuous-wave output power at 2.07 µm with 5% output coupling, which is the highest output power for all solid-state 2.07 μm cw rod Tm:YAG laser reported so far. With an output coupler of 10% transmission, the center wavelength of the laser is switched to 2.02 μm with an output power of 77.1 W. This is the first observation of high-power wavelength switchable diode-side-pumped rod Tm:YAG laser around 2 µm.

Water Vapour Propulsion Powered by a High-Power Laser-Diode

Science.gov (United States)

Minami, Y.; Uchida, S.

Most of the laser propulsion schemes now being proposed and developed assume neither power supplies nor on-board laser devices and therefore are bound to remote laser stations like a kite via a laser beam “string”. This is a fatal disadvantage for a space vehicle that flies freely though it is often said that no need of installing an energy source is an advantage of a laser propulsion scheme. The possibility of an independent laser propulsion space vehicle that carries a laser source and a power supply on board is discussed. This is mainly due to the latest development of high power laser diode (LD) technology. Both high specific impulse-low thrust mode and high thrust-low specific impulse mode can be selected by controlling the laser output by using vapour or water as a propellant. This mode change can be performed by switching between a high power continuous wave (cw), LD engine for high thrust with a low specific impulse mode and high power LD pumping Q-switched Nd:YAG laser engine for low thrust with the high specific impulse mode. This paper describes an Orbital Transfer Vehicle equipped with the above-mentioned laser engine system and fuel cell that flies to the Moon from a space platform or space hotel in Earth orbit, with cargo shipment from lunar orbit to the surface of the Moon, including the possibility of a sightseeing trip.

Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

Science.gov (United States)

Kim, Younghyun; Sung, Yunsu; Yang, Jung-Tack; Choi, Woo-Young

2018-02-01

The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

High power cascade diode lasers emitting near 2 μm

Energy Technology Data Exchange (ETDEWEB)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

XUV preionization effects in high power magnetically insulated diodes

International Nuclear Information System (INIS)

Maenchen, J.; Woodworth, J.R.; Foltz, B.W.

1985-01-01

Electrode surface desorption and photoionization by an intense XUV pulse has been shown to dramatically improve a vacuum diode impedance history. The 6-Terawatt Applied-B ion diode experiment on PBFA I is limited by a delay in both diode and ion current initiation. The insulation magnetic field impedes electron crossings which are believed to aid the ion source initiation. The diode is therefore initially a severe overmatch to the accelerator 40-nsec, 2.2-MV, 0.5-ohm pulse. The diode current increases during the pulse, leading to a rapidly falling impedance history. The application of an intense (30 to 50-kW/cm 2 ) XUV flux from an array of sixteen 60-kA spark sources is found to cause immediate diode current flow, resulting in both a greatly improved impedance history and the prompt initiation of an intense higher power ion beam

A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm diodes

International Nuclear Information System (INIS)

Yan, S; Yan, X; Yu, H; Zhang, L; Guo, L; Sun, W; Hou, W; Lin, X

2013-01-01

We present a high power 880 nm diode-pumped passively mode-locked Nd:YVO 4 oscillator, followed by an 880 nm diode-pumped Nd:YVO 4 amplifier. In the oscillator, a maximum power of 8.7 W was obtained with a repetition rate of 63 MHz and pulse duration of 32 ps, corresponding to an optical efficiency of 36%. The beam quality factors M 2 were measured to be M x 2 =1.2 and M y 2 =1.1 9, respectively. The amplifier generated up to 19.1 W output power with the pulse width and repetition rate remaining unaltered after amplification. (paper)

Temperature evaluation of dental implant surface irradiated with high-power diode laser.

Science.gov (United States)

Rios, F G; Viana, E R; Ribeiro, G M; González, J C; Abelenda, A; Peruzzo, D C

2016-09-01

The prevalence of peri-implantitis and the absence of a standard approach for decontamination of the dental implant surface have led to searches for effective therapies. Since the source of diode lasers is portable, has reduced cost, and does not cause damage to the titanium surface of the implant, high-power diode lasers have been used for this purpose. The effect of laser irradiation on the implants is the elevation of the temperature surface. If this elevation exceeds 47 °C, the bone tissue is irreversibly damaged, so for a safety therapy, the laser parameters should be controlled. In this study, a diode laser of GaAsAl was used to irradiate titanium dental implants, for powers 1.32 to 2.64 W (real) or 2.00 to 4.00 W (nominal), in continuous/pulsed mode DC/AC, with exposure time of 5/10 s, with/without air flow for cooling. The elevation of the temperature was monitored in real time in two positions: cervical and apical. The best results for decontamination using a 968-nm diode laser were obtained for a power of 1.65 and 1.98 W (real) for 10 s, in DC or AC mode, with an air flow of 2.5 l/min. In our perspective in this article, we determine a suggested approach for decontamination of the dental implant surface using a 968-nm diode laser.

Thermal properties of high-power diode lasers investigated by means of high resolution thermography

International Nuclear Information System (INIS)

Kozłowska, Anna; Maląg, Andrzej; Dąbrowska, Elżbieta; Teodorczyk, Marian

2012-01-01

In the present work, thermal effects in high-power diode lasers are investigated by means of high resolution thermography. Thermal properties of the devices emitting in the 650 nm and 808 nm wavelength ranges are compared. The different versions of the heterostructure design are analyzed. The results show a lowering of active region temperature for diode lasers with asymmetric heterostructure scheme with reduced quantum well distance from the heterostructure surface (and the heat sink). Optimization of technological processes allowed for the improvement of the device performance, e.g. reduction of solder non-uniformities and local defect sites at the mirrors which was visualized by the thermography.

High-power and highly efficient diode-cladding-pumped holmium-doped fluoride fiber laser operating at 2.94 microm.

Science.gov (United States)

Jackson, Stuart D

2009-08-01

A high-power diode-cladding-pumped Ho(3+), Pr(3+)-doped fluoride glass fiber laser is demonstrated. The laser produced a maximum output power of 2.5 W at a slope efficiency of 32% using diode lasers emitting at 1,150 nm. The long-emission wavelength of 2.94 microm measured at maximum pump power, which is particularly suited to medical applications, indicates that tailoring of the proportion of Pr(3+) ions can provide specific emission wavelengths while providing sufficient de-excitation of the lower laser level.

16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers

DEFF Research Database (Denmark)

Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin

2011-01-01

output power achieved by spectral beam combining of two single element tapered diode lasers. Since spectral beam combining does not affect beam propagation parameters, M2-values of 1.8 (fast axis) and 3.3 (slow axis) match the M2- values of the laser with lowest spatial coherence. The principle......Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as 93.7% is achieved, resulting in a single beam with high spatial coherence. The result represents the highest...... of spectral beam combining used in our experiments can be expanded to combine more than two tapered diode lasers and hence it is expected that the output power may be increased even further in the future....

16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers.

Science.gov (United States)

Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-01-17

Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as 93.7% is achieved, resulting in a single beam with high spatial coherence. The result represents the highest output power achieved by spectral beam combining of two single element tapered diode lasers. Since spectral beam combining does not affect beam propagation parameters, M2-values of 1.8 (fast axis) and 3.3 (slow axis) match the M2-values of the laser with lowest spatial coherence. The principle of spectral beam combining used in our experiments can be expanded to combine more than two tapered diode lasers and hence it is expected that the output power may be increased even further in the future.

Defect engineering for 650 nm high-power AlGaInP laser diodes

International Nuclear Information System (INIS)

Kim, D.S.; Kim, K.C.; Shin, Y.C.; Kang, D.H.; Kim, B.J.; Kim, Y.M.; Park, Y.; Kim, T.G.

2006-01-01

To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 deg. C. The characteristic temperatures (T ) were 212 K for 25-60 deg. C and 106 K over 60 deg. C

Degradation Processes in High-Power Diode Lasers under External Optical Feedback

DEFF Research Database (Denmark)

Tomm, Jens. W.; Hempel, Martin; Petersen, Paul Michael

2013-01-01

The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually experiences the highest total optical load remains unaffected by the aging, while severe impact...

Methods for slow axis beam quality improvement of high power broad area diode lasers

Science.gov (United States)

An, Haiyan; Xiong, Yihan; Jiang, Ching-Long J.; Schmidt, Berthold; Treusch, Georg

2014-03-01

For high brightness direct diode laser systems, it is of fundamental importance to improve the slow axis beam quality of the incorporated laser diodes regardless what beam combining technology is applied. To further advance our products in terms of increased brightness at a high power level, we must optimize the slow axis beam quality despite the far field blooming at high current levels. The later is caused predominantly by the built-in index step in combination with the thermal lens effect. Most of the methods for beam quality improvements reported in publications sacrifice the device efficiency and reliable output power. In order to improve the beam quality as well as maintain the efficiency and reliable output power, we investigated methods of influencing local heat generation to reduce the thermal gradient across the slow axis direction, optimizing the built-in index step and discriminating high order modes. Based on our findings, we have combined different methods in our new device design. Subsequently, the beam parameter product (BPP) of a 10% fill factor bar has improved by approximately 30% at 7 W/emitter without efficiency penalty. This technology has enabled fiber coupled high brightness multi-kilowatt direct diode laser systems. In this paper, we will elaborate on the methods used as well as the results achieved.

Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

Directory of Open Access Journals (Sweden)

Hsu Chih-Neng

2013-01-01

Full Text Available This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.

Diode pumped 1kHz high power Nd:YAG laser with excellent beam quality

NARCIS (Netherlands)

Godfried, Herman; Godfried, H.P; Offerhaus, Herman L.

1997-01-01

The design and operation of a one kilohertz diode pumped all solid-state Nd:YAG master oscillator power amplifier system with a phase conjugate mirror is presented. The setup allows high power scaling without reduction in beam quality.

Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

Science.gov (United States)

An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

2015-03-01

We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

The impact of external optical feedback on the degradation behavior of high-power diode lasers

DEFF Research Database (Denmark)

Hempel, Martin; Chi, Mingjun; Petersen, Paul Michael

2013-01-01

The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...... unaffected, severe impact is observed to the cladding layers and the waveguide. Consequently hardening of diode lasers for operation under external optical feedback must necessarily involve claddings and waveguide, into which the quantum well is embedded.......The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...

Widely Tunable High-Power Tapered Diode Laser at 1060 nm

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Sumpf, Bernd; Erbert, Götz

2011-01-01

We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser...... operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range....

Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

Science.gov (United States)

Ji, Jae-Hoon; Jo, GaeHun; Ha, Jae-Geun; Koo, Sang-Mo; Kamiko, Masao; Hong, JunHee; Koh, Jung-Hyuk

2018-09-01

In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

Powering laser diode systems

CERN Document Server

Trestman, Grigoriy A

2017-01-01

This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

Science.gov (United States)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications 96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Spectral, spatial and temporal control of high-power diode lasers through nonlinear optical feedback

NARCIS (Netherlands)

van Voorst, P.D.

2008-01-01

A high-power diode laser offers multi-Watt output power from a small and efficient device, which makes them an interesting source for numerous applications. The spatial and spectral output however, are of reduced quality which limits the applicability. This limited quality is connected to the design

Amorphous structure evolution of high power diode laser cladded Fe–Co–B–Si–Nb coatings

International Nuclear Information System (INIS)

Zhu Yanyan; Li Zhuguo; Huang Jian; Li Min; Li Ruifeng; Wu Yixiong

2012-01-01

Highlights: ► Fabricated amorphous composited coating by high power diode laser cladding with single track. ► Lower dilution and higher scanning speed are desired to obtain higher amorphous phase fraction. ► White spots phase with high content of Nb embedded in the amorphous matrix. - Abstract: Fe–Co–B–Si–Nb coatings were fabricated on the surface of low carbon steel using high power diode laser cladding of [(Fe 0.5 Co 0.5 ) 0.75 B 0.2 Si 0.05 ] 95.7 Nb 4.3 amorphous powders at three different scanning speeds of 6, 17 and 50 m/s. At each scanning speed, laser power was optimized to obtain low dilution ratio. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy with energy dispersive spectrometer and electron probe micro analysis were carried out to characterize the microstructure and chemical composition of the cladded coatings. Differential scanning calorimetry was also carried out to investigate the fraction of the amorphous phase. The results showed that dilution ratio and scanning speed were the two main factors for fabricating Fe–Co–B–Si–Nb amorphous coating by high power diode laser cladding. Low dilution ratio was crucial for the formation of amorphous phase. When the dilution ratio was low, the fraction of amorphous phase in the cladded coatings increased upon increasing the scanning speed.

Powerful infrared emitting diodes

Directory of Open Access Journals (Sweden)

Kogan L. M.

2012-02-01

Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

International Nuclear Information System (INIS)

Chen Ping; Zhao De-Gang; Feng Mei-Xin; Jiang De-Sheng; Liu Zong-Shun; Yang Hui; Zhang Li-Qun; Li De-Yao; Liu Jian-Ping; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun

2013-01-01

An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A

Next generation 9xx/10xx nm high power laser diode bars for multi-kilowatt industrial applications

Science.gov (United States)

Commin, Paul; Todt, René; Krejci, Martin; Bättig, Rainer; Brunner, Reinhard; Lichtenstein, Norbert

2013-02-01

We report on the development of high power, 9xx-10xx nm laser diode bars for use in direct diode systems and for solidstate and fibre laser pumping with applications in industrial markets. For 1 cm wide bars on micro channel cooler (MCC) we have achieved a reliable output power of 250 W across the 900 nm - 1060 nm range. At this output power level we have achieved power conversion efficiencies of 65-66 % and 90 % power content slow axis beam divergence of ~6.5°. Results of a 6400 h life test show an average power degradation of 0.6 % per 1000 h at this operating power level. We will also show results of high power bars assembled on the new OCLARO conductive cooler, the BLM. This new cooler has a small footprint of 12.6 mm × 24.8 mm and is designed for lateral or vertical stacking of diodes in multi kilowatt systems but with the benefits associated with a conductive cooler. The thermal properties are shown to be the same as for a standard CS mount. 1 cm wide high fill factor bars and 0.5 cm wide low fill factor half bars assembled on the BLM operate at 63-64 % power conversion efficiency (PCE) with output powers of up to 250 W and 150 W, respectively.

Improvements of high-power diode laser line generators open up new application fields

Science.gov (United States)

Meinschien, J.; Bayer, A.; Bruns, P.; Aschke, L.; Lissotschenko, V. N.

2009-02-01

Beam shaping improvements of line generators based on high power diode lasers lead to new application fields as hardening, annealing or cutting of various materials. Of special interest is the laser treatment of silicon. An overview of the wide variety of applications is presented with special emphasis of the relevance of unique laser beam parameters like power density and beam uniformity. Complementary to vision application and plastic processing, these new application markets become more and more important and can now be addressed by high power diode laser line generators. Herewith, a family of high power diode laser line generators is presented that covers this wide spectrum of application fields with very different requirements, including new applications as cutting of silicon or glass, as well as the beam shaping concepts behind it. A laser that generates a 5m long and 4mm wide homogeneous laser line is shown with peak intensities of 0.2W/cm2 for inspection of railway catenaries as well as a laser that generates a homogeneous intensity distribution of 60mm x 2mm size with peak intensities of 225W/cm2 for plastic processing. For the annealing of silicon surfaces, a laser was designed that generates an extraordinary uniform intensity distribution with residual inhomogeneities (contrast ratio) of less than 3% over a line length of 11mm and peak intensities of up to 75kW/cm2. Ultimately, a laser line is shown with a peak intensity of 250kW/cm2 used for cutting applications. Results of various application tests performed with the above mentioned lasers are discussed, particularly the surface treatment of silicon and the cutting of glass.

High-power pure blue laser diodes

Energy Technology Data Exchange (ETDEWEB)

Ohta, M.; Ohizumi, Y.; Hoshina, Y.; Tanaka, T.; Yabuki, Y.; Goto, S.; Ikeda, M. [Development Center, Sony Shiroishi Semiconductor Inc., Miyagi (Japan); Funato, K. [Materials Laboratories, Sony Corporation, Kanagawa (Japan); Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, Kanagawa (Japan)

2007-06-15

We successfully developed high-power and long-lived pure blue laser diodes (LDs) having an emission wavelength of 440-450 nm. The pure-blue LDs were grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates. The dislocation density was successfully reduced to {proportional_to}10{sup 6} cm{sup -2} by optimizing the MOCVD growth conditions and the active layer structure. The vertical layer structure was designed to have an absorption loss of 4.9 cm{sup -1} and an internal quantum efficiency of 91%. We also reduced the operating current density to 6 kA/cm{sup 2} under 750 mW continuous-wave operation at 35 C by optimizing the stripe width to 12 {mu}m and the cavity length to 2000 {mu}m. The half lifetimes in constant current mode are estimated to be longer than 10000 h. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Experimental studies for improvement of thermal effects in a high-power fiber-coupled diode laser module operating at 808 nm

Science.gov (United States)

El-Sherif, Ashraf F.; Hussein, Khalid; Hassan, Mahmoud F.; Talat, Mahmoud M.

2012-03-01

High power diode laser module operating at 808 nm is required for different applications, such as developing an efficient high power Nd3+-doped solid state laser and Tm3+ -doped silica fiber laser, industrial, medical and military applications. Optical and thermal images characterization for a fiber-coupled high power diode laser module is presented experimentally for 6.6 Watt output optical power .An external temperature controller system was designed, which stabilizes the central wavelength at 808 nm at 25°C over a wide range of diode laser driving current from 1A to 6 A. without this cooling system, the wavelength changes by 0.35nm/°C for temperature changes from 20°C to 40°C at the same range of the driving current. In this paper we have present a methodology for temperature reduction of a 808 nm high power diode laser module, based on dynamically thermal control, which is known as dynamic thermal management. Stabilization of the output wavelength has been done by using proportional speed control (PSC) of a CPU cooling fan with certain scheme of straight fins heat sink. Two electronic circuits based on pulse width modulation (PWM) in microcontroller and comparators IC have been used. This technique can be considered as an effective mechanism for reducing temperature and power dissipation to make stabilization of the diode laser output wavelength by preventing heat accumulation from the thermo electric cooling (TEC) inside the diode laser module confirmed by thermal images.

Use of high-power diode lasers for hardening and thermal conduction welding of metals

Science.gov (United States)

Klocke, Fritz; Demmer, Axel; Zaboklicki, A.

1997-08-01

CO2 and Nd:YAG high power lasers have become established as machining tools in industrial manufacturing over the last few years. The most important advantages compared to conventional processing techniques lie in the absence of forces introduced by the laser into the workpiece and in the simple arid highly accurate control in terms ofpositioning and timing making the laser a universally applicable, wear-free and extremely flexible tool /1,2/. The laser can be utilised costeffectively in numerous manufacturing processes but there are also further applications for the laser which produce excellent results from a technical point of view, but are not justified in terms of cost. The extensive use of lasers, particularly in small companies and workshops, is hindered by two main reasons: the complexity and size ofthe laser source and plant and the high investment costs /3/. A new generation of lasers, the high power diode lasers (HDL), combines high performance with a compact design, making the laser a cheap and easy to use tool with many applications /3,4,5,6/. In the diode laser, the laser beam is generated by a microelectronic diode which transforms electrical energy directly into laser energy. Diode lasers with low power outputs have, for some time, been making their mark in our everyday lives: they are used in CD players, laser printers and scanners at cash tills. Modern telecommunications would be impossible without these lasers which enable information to be transmitted in the form oflight impulses through optical fibres. They can also be found in compact precision measurement instrumentation - range fmders, interferometers and pollutant analysis devices /3,6/. In the field of material processing, the first applications ofthe laser, such as for soldering, inscribing, surface hardening and plastic or heat conduction welding, will exceed the limits ofthe relatively low performance output currently available. The diode laser has a shorter wavelength than the CO2 and

Emission parameters and thermal management of single high-power 980-nm laser diodes

International Nuclear Information System (INIS)

Bezotosnyi, V V; Krokhin, O N; Oleshchenko, V A; Pevtsov, V F; Popov, Yu M; Cheshev, E A

2014-01-01

We report emission parameters of high-power cw 980-nm laser diodes (LDs) with a stripe contact width of 100 μm. On copper heat sinks of the C-mount type, a reliable output power of 10 W is obtained at a pump current of 10 A. Using a heat flow model derived from analysis of calculated and measured overall efficiencies at pump currents up to 20 A, we examine the possibility of raising the reliable power limit of a modified high-power LD mounted on heat sinks of the F-mount type using submounts with optimised geometric parameters and high thermal conductivity. The possibility of increasing the maximum reliable cw output power to 20 W with the use of similar laser crystals is discussed. (lasers)

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

Science.gov (United States)

Liu, Bo; Braiman, Yehuda

2018-05-01

We introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ∼25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. We found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Green high-power tunable external-cavity GaN diode laser at 515 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam...... incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode...... laser system....

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

Science.gov (United States)

Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

2018-01-01

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

High Power Continuous-Wave Diode-End-Pumped 1.34-μm Nd:GdVO4 Laser

International Nuclear Information System (INIS)

Rui, Zhou; Shuang-Chen, Ruan; Chen-Lin, Du; Jian-Quan, Yao

2008-01-01

A high power cw all-solid-state 1.34-μm Nd:GdVO 4 laser is experimentally demonstrated. With a diode-double-end-pumped configuration and a simple plane-parallel cavity, a maximum output power of 27.9W is obtained at incident pump power of 96 W, introducing a slope efficiency of 35.4%. To the best of our knowledge, this is the highest output power of diode-end-pumped 1.3-μm laser. With the experimental data, the thermal-stress-resistance figure of merit of Nd:GdVO 4 crystal with 0.3 at% Nd 3+ doped level is calculated to be larger than 9.94 W/cm

High-power diode-side-pumped intracavity-frequency-doubled continuous wave 532 nm laser

International Nuclear Information System (INIS)

Zhang Yuping; Zhang Huiyun; Zhong Kai; Li Xifu; Wang Peng; Yao Jianquan

2007-01-01

An efficient and high-power diode-side-pumped cw 532 nm green laser based on a V-shaped cavity geometry, and capable of generating 22.7 W green radiation with optical conversion efficiency of 8.31%, has been demonstrated. The laser is operated with rms noise amplitude of less than 1% and with M 2 -parameter of about 6.45 at the top of the output power. This laser has the potential for scaling to much higher output power. (authors)

Analysis of High-Power Diode Laser Heating Effects on HY-80 Steel for Laser Assisted Friction Stir Welding Applications

Energy Technology Data Exchange (ETDEWEB)

Wiechec, Maxwell; Baker, Brad; McNelley, Terry; Matthews, Manyalibo; Rubenchik, Alexander; Rotter, Mark; Beach, Ray; Wu, Sheldon

2017-01-01

In this research, several conditions of high power diode laser heated HY-80 steel were characterized to determine the viability of using such lasers as a preheating source before friction stir welding in order to reduce frictional forces thereby reducing tool wear and increasing welding speeds. Differences in microstructures within heat affected zones were identified at specific laser powers and traverse speeds. Vickers hardness values were recorded and analyzed to validate the formation of additional martensite in diode laser heated regions of HY-80 steel. Conditions that produced little to no additional martensite were identified and relationships among high power diode laser power, traverse speed, and martensite formation were determined. The development of heat affected zones, change in grain structure, and creation of additional martensite in HY-80 can be prevented through the optimization of laser amperage and transverse speed.

High-power light-emitting diode based facility for plant cultivation

Energy Technology Data Exchange (ETDEWEB)

Tamulaitis, G [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Duchovskis, P [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Bliznikas, Z [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Breive, K [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Ulinskaite, R [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Brazaityte, A [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Novickovas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Zukauskas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania)

2005-09-07

Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated.

High-power light-emitting diode based facility for plant cultivation

International Nuclear Information System (INIS)

Tamulaitis, G; Duchovskis, P; Bliznikas, Z; Breive, K; Ulinskaite, R; Brazaityte, A; Novickovas, A; Zukauskas, A

2005-01-01

Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated

A high power gain switched diode laser oscillator and amplifier for the CEBAF polarized electron injector

International Nuclear Information System (INIS)

Poelker, M.; Hansknecht, J.

1996-01-01

The photocathode in the polarized electron source at Jefferson Lab is illuminated with pulsed laser light from a gain switched diode laser and diode optical amplifier. Laser pulse repetition rates up to 2,000 MHz, optical pulsewidths between 31 and 123 ps, and average power > 100 mW are demonstrated. The laser system is highly reliable and completely remotely controlled

High power diode laser remelting of metals

International Nuclear Information System (INIS)

Chmelickova, H; Tomastik, J; Ctvrtlik, R; Supik, J; Nemecek, S; Misek, M

2014-01-01

This article is focused on the laser surface remelting of the steel samples with predefined overlapping of the laser spots. The goal of our experimental work was to evaluate microstructure and hardness both in overlapped zone and single pass ones for three kinds of ferrous metals with different content of carbon, cast iron, non-alloy structural steel and tool steel. High power fibre coupled diode laser Laserline LDF 3600-100 was used with robotic guided processing head equipped by the laser beam homogenizer that creates rectangular beam shape with uniform intensity distribution. Each sample was treated with identical process parameters - laser power, beam diameter, focus position, speed of motion and 40% spot overlap. Dimensions and structures of the remelted zone, zone of the partial melting, heat affected zone and base material were detected and measured by means of laser scanning and optical microscopes. Hardness progress in the vertical axis of the overlapped zone from remelted surface layer to base material was measured and compared with the hardness of the single spots. The most hardness growth was found for cast iron, the least for structural steel. Experiment results will be used to processing parameters optimization for each tested material separately.

Eye safe high power laser diode in the 1410-1550nm range

Science.gov (United States)

Boucart, Julien; de Largy, Brian; Kearley, Mark; Lichtenstein, Norbert

2010-02-01

The demand for high power lasers emitting in the 14xx-15xxnm range is growing for applications in fields such as medical or homeland security. We demonstrate high power laser diodes with emission at 1430, 1470 and 1560 nm. Single multimode emitters at 1470nm emit about 3.5W in CW operation. Power conversion efficiency can reach values as high as 38.5%. With this base material, single and multi-emitter fiber coupled modules are built. Additionally, bars on passive and microchannel coolers are fabricated that deliver 25W and 38W respectively in CW mode, while obtaining more than 80 W in pulsed mode. All reliability tests show an outstanding stability of the material with no signs of wearout after 3750 hrs under strong acceleration conditions.

Power blue and green laser diodes and their applications

Science.gov (United States)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Erbert, G.; Sumpf, B.

2010-01-01

A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

High temperature semiconductor diode laser pumps for high energy laser applications

Science.gov (United States)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

High-average-power diode-pumped Yb: YAG lasers

International Nuclear Information System (INIS)

Avizonis, P V; Beach, R; Bibeau, C M; Emanuel, M A; Harris, D G; Honea, E C; Monroe, R S; Payne, S A; Skidmore, J A; Sutton, S B

1999-01-01

A scaleable diode end-pumping technology for high-average-power slab and rod lasers has been under development for the past several years at Lawrence Livermore National Laboratory (LLNL). This technology has particular application to high average power Yb:YAG lasers that utilize a rod configured gain element. Previously, this rod configured approach has achieved average output powers in a single 5 cm long by 2 mm diameter Yb:YAG rod of 430 W cw and 280 W q-switched. High beam quality (M(sup 2)= 2.4) q-switched operation has also been demonstrated at over 180 W of average output power. More recently, using a dual rod configuration consisting of two, 5 cm long by 2 mm diameter laser rods with birefringence compensation, we have achieved 1080 W of cw output with an M(sup 2) value of 13.5 at an optical-to-optical conversion efficiency of 27.5%. With the same dual rod laser operated in a q-switched mode, we have also demonstrated 532 W of average power with an M(sup 2) and lt; 2.5 at 17% optical-to-optical conversion efficiency. These q-switched results were obtained at a 10 kHz repetition rate and resulted in 77 nsec pulse durations. These improved levels of operational performance have been achieved as a result of technology advancements made in several areas that will be covered in this manuscript. These enhancements to our architecture include: (1) Hollow lens ducts that enable the use of advanced cavity architectures permitting birefringence compensation and the ability to run in large aperture-filling near-diffraction-limited modes. (2) Compound laser rods with flanged-nonabsorbing-endcaps fabricated by diffusion bonding. (3) Techniques for suppressing amplified spontaneous emission (ASE) and parasitics in the polished barrel rods

Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2012-01-01

knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

High-power diode-side-pumped rod Tm:YAG laser at 2.07 μm.

Science.gov (United States)

Wang, Caili; Niu, Yanxiong; Du, Shifeng; Zhang, Chao; Wang, Zhichao; Li, Fangqin; Xu, Jialin; Bo, Yong; Peng, Qinjun; Cui, Dafu; Zhang, Jingyuan; Xu, Zuyan

2013-11-01

We report a high-power diode-laser (LD) side-pumped rod Tm:YAG laser of around 2 μm. The laser was water-cooled at 8°C and yielded a maximum output power of 267 W at 2.07 μm, which is the highest output power for an all solid-state cw 2.07 μm rod Tm:YAG laser reported as far as we know. The corresponding optical-optical conversion efficiency was 20.7%, and the slope efficiency was about 29.8%, respectively.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays Operating in Long Pulse Mode

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

2006-01-01

Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data of the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

Novel packaging for CW and QCW diode laser modules for operation with high power and duty cycles

Science.gov (United States)

Fassbender, Wilhelm; Lotz, Jens; Kissel, Heiko; Biesenbach, Jens

2018-02-01

Continuous wave (CW) and quasi-continuous wave (QCW) operated diode laser bars and arrays have found a wide range of industrial, medical, scientific, military and space applications with a broad variety in wavelength, pulse energy, pulse duration and beam quality. Recent applications require even higher power, duty cycles and power density. The heat loss will be dissipated by conductive cooling or liquid cooling close to the bars. We present the latest performance and reliability data of two novel high-brightness CW and QCW arrays of customized and mass-production modules, in compact and robust industry design for operation with high power and high duty cycles. All designs are based on single diode packages consisting of 10mm laser bars, soft or hard soldered between expansion matched submounts. The modular components cover a wide span of designs which differ basically in water/conduction (active/passive) cooled, single, linear (horizontal and vertical) arranged designs, as well as housed and unhoused modules. The different assembling technologies of active and passive cooled base plates affect the heat dissipation and therefore the reachable power at different QCW operating conditions, as well as the lifetime. As an example, a package consisting of 8 laser diodes, connected to a 28.8*13.5*7.0mm3 DCB (direct copper bonded) submount, passively or actively cooled is considered. This design is of particular interest for mobile applications seamless module to module building system, with an infinite number of laser bars at 1.7mm pitch. Using 940nm bars we can reach an optical output power per bar of 450W at 25°C base plate temperature with 10Hz, 1.2% duty cycle and 1.2ms pulse duration. As an additional example, micro channel coolers can be vertically stacked up to 50 diodes with a 1,15mm pitch. This design is suitable for all applications, demanding also compactness and light weight and high power density. Using near infrared bars and others, we can reach an optical

Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

Energy Technology Data Exchange (ETDEWEB)

Goto, Shu; Ohta, Makoto; Yabuki, Yoshifumi; Hoshina, Yukio; Hashizu, Toshihiro; Ikeda, Masao [Development Center, Sony Shiroishi Semiconductor, Inc., 3-53-2 Shiratori, Shiroishi, Miyagi, 989-0734 (Japan); Naganuma, Kaori; Tamamura, Koshi [Core Technology Development Group, Micro Systems Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi Kanagawa, 243-0041 (Japan)

2003-11-01

AlGaInN-based blue-violet laser diodes with a single broad-area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were examined; 10, 50, and 100 {mu}m, and the maximum light output power of 0.94 W under cw operation at 20 C was achieved for the sample with a stripe width of 10 {mu}m. A super high-power laser diode array was fabricated using 11 of these high-performance laser chips, with a resultant output power of 6.1 W under cw operation at 20 C. This result represents the highest reported output power for blue-violet laser diodes. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High power diode pumped solid state (DPSS) laser systems active media robust modeling and analysis

Science.gov (United States)

Kashef, Tamer M.; Mokhtar, Ayman M.; Ghoniemy, Samy A.

2018-02-01

Diode side-pumped solid-state lasers have the potential to yield high quality laser beams with high efficiency and reliability. This paper summarizes the results of simulation of the most predominant active media that are used in high power diode pumped solid-state (DPSS) laser systems. Nd:YAG, Nd:glass, and Nd:YLF rods laser systems were simulated using the special finite element analysis software program LASCAD. A performance trade off analysis for Nd:YAG, Nd:glass, and Nd:YLF rods was performed in order to predict the system optimized parameters and to investigate thermally induced thermal fracture that may occur due to heat load and mechanical stress. The simulation results showed that at the optimized values Nd:YAG rod achieved the highest output power of 175W with 43% efficiency and heat load of 1.873W/mm3. A negligible changes in laser output power, heat load, stress, and temperature distributions were observed when the Nd:YAG rod length was increased from 72 to 80mm. Simulation of Nd:glass at different rod diameters at the same pumping conditions showed better results for mechanical stress and thermal load than that of Nd:YAG and Nd:YLF which makes it very suitable for high power laser applications especially for large rod diameters. For large rod diameters Nd:YLF is mechanically weaker and softer crystal compared to Nd:YAG and Nd:glass due to its poor thermomechanical properties which limits its usage to only low to medium power systems.

Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

OpenAIRE

Cappuccio, Joseph C., Jr.

1988-01-01

Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

Science.gov (United States)

Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

2013-01-01

Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

Emission properties of diode laser bars during pulsed high-power operation

International Nuclear Information System (INIS)

Hempel, Martin; Tomm, Jens W; Elsaesser, Thomas; Hennig, Petra

2011-01-01

High-power diode laser bars (cm-bars) are subjected to single pulse step tests carried out up to and beyond their ultimate limits of operation. Laser nearfields and thermal behaviour are monitored for pulse widths in the 10–100 µs range with streak- and thermo-cameras, respectively. Thresholds of catastrophic optical damage are determined, and their dependence on the length of the injected current pulses is explained qualitatively. This approach permits testing the hardness of facet coatings of cm-bars with or without consideration of accidental single pre-damaged emitter failure effects and thermal crosstalk between the emitters. This allows for the optimization of pulsed operation parameters, helps limiting sudden degradation and provides insight into the mechanisms governing the device emission behaviour at ultimate output powers. (fast track communication)

High-power quantum-dot superluminescent diodes with p-doped active region

NARCIS (Netherlands)

Rossetti, M.; Li, L.; Fiore, A.; Occhi, L.; Velez, C.; Mikhrin, S.; Kovsh, A.

2006-01-01

We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability

Coupling of an applied field magnetically insulated ion diode to a high power magnetically insulated transmission line system

International Nuclear Information System (INIS)

Maenchen, J.E.

1983-01-01

The coupling of energy from a high power pulsed accelerator through a long triplate magnetically insulated transmission line (MITL) in vacuum to an annular applied magnetic field insulated extraction ion diode is examined. The narrow power transport window and the wave front erosion of the MITL set stringent impedance history conditions on the diode load. A new ion diode design developed to satisfy these criteria with marginal electron insulation is presented. The LION accelerator is used to provide a positive polarity 1.5 MV, 350 kA, 40 ns FWHM pulse with a 30 kA/ns current rate from a triplate MITL source. A transition converts the triplate into a cylindrical cross section which flares into the ion diode load. Extensive current and voltage measurements performed along this structure and on the extracted ion beam provide conclusive evidence that the self insulation condition of the MITL is maintained in the transition by current loss alone. The ion diode utilizes a radial magnetic field between a grounded cathode annular emission tip and a disk anode. A 50 cm 2 dielectric/metal anode area serves as the ion plasma source subject to direct electron bombardment from the opposing cathode tip under marginal magnetic insulation conditions. The ions extracted cross the radial magnetic field and exit the diode volume as an annular cross section beam of peak current about 100 kA. The diode current gradually converts from the initial electron flow to nearly 100% ion current after 30 ns, coupling 60% of the diode energy into ions

Thermal imaging of high power diode lasers subject to back-irradiance

Science.gov (United States)

Li, C.; Pipe, K. P.; Cao, C.; Thiagarajan, P.; Deri, R. J.; Leisher, P. O.

2018-03-01

CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.

High-Power DFB Diode Laser-Based CO-QEPAS Sensor: Optimization and Performance.

Science.gov (United States)

Ma, Yufei; Tong, Yao; He, Ying; Yu, Xin; Tittel, Frank K

2018-01-04

A highly sensitive carbon monoxide (CO) trace gas sensor based on quartz-enhanced photoacoustic spectroscopy (QEPAS) was demonstrated. A high-power distributed feedback (DFB), continuous wave (CW) 2.33 μm diode laser with an 8.8 mW output power was used as the QEPAS excitation source. By optimizing the modulation depth and adding an optimum micro-resonator, compared to a bare quartz tuning fork (QTF), a 10-fold enhancement of the CO-QEPAS signal amplitude was achieved. When water vapor acting as a vibrational transfer catalyst was added to the target gas, the signal was further increased by a factor of ~7. A minimum detection limit (MDL) of 11.2 ppm and a calculated normalized noise equivalent absorption (NNEA) coefficient of 1.8 × 10 -5 cm -1 W/√Hz were obtained for the reported CO-QEPAS sensor.

High-performance ionic diode membrane for salinity gradient power generation.

Science.gov (United States)

Gao, Jun; Guo, Wei; Feng, Dan; Wang, Huanting; Zhao, Dongyuan; Jiang, Lei

2014-09-03

Salinity difference between seawater and river water is a sustainable energy resource that catches eyes of the public and the investors in the background of energy crisis. To capture this energy, interdisciplinary efforts from chemistry, materials science, environmental science, and nanotechnology have been made to create efficient and economically viable energy conversion methods and materials. Beyond conventional membrane-based processes, technological breakthroughs in harvesting salinity gradient power from natural waters are expected to emerge from the novel fluidic transport phenomena on the nanoscale. A major challenge toward real-world applications is to extrapolate existing single-channel devices to macroscopic materials. Here, we report a membrane-scale nanofluidic device with asymmetric structure, chemical composition, and surface charge polarity, termed ionic diode membrane (IDM), for harvesting electric power from salinity gradient. The IDM comprises heterojunctions between mesoporous carbon (pore size ∼7 nm, negatively charged) and macroporous alumina (pore size ∼80 nm, positively charged). The meso-/macroporous membrane rectifies the ionic current with distinctly high ratio of ca. 450 and keeps on rectifying in high-concentration electrolytes, even in saturated solution. The selective and rectified ion transport furthermore sheds light on salinity-gradient power generation. By mixing artificial seawater and river water through the IDM, substantially high power density of up to 3.46 W/m(2) is discovered, which largely outperforms some commercial ion-exchange membranes. A theoretical model based on coupled Poisson and Nernst-Planck equations is established to quantitatively explain the experimental observations and get insights into the underlying mechanism. The macroscopic and asymmetric nanofluidic structure anticipates wide potentials for sustainable power generation, water purification, and desalination.

Pulsed operation of high-power light emitting diodes for imaging flow velocimetry

International Nuclear Information System (INIS)

Willert, C; Klinner, J; Moessner, S; Stasicki, B

2010-01-01

High-powered light emitting diodes (LED) are investigated for possible uses as light sources in flow diagnostics, in particular, as an alternative to laser-based illumination in particle imaging flow velocimetry in side-scatter imaging arrangements. Recent developments in solid state illumination resulted in mass-produced LEDs that provide average radiant power in excess of 10 W. By operating these LEDs with short duration, pulsed currents that are considerably beyond their continuous current damage threshold, light pulses can be generated that are sufficient to illuminate and image micron-sized particles in flow velocimetry. Time-resolved PIV measurements in water at a framing rate of 2kHz are presented. The feasibility of LED-based PIV measurements in air is also demonstrated

High-power narrow-linewidth quasi-CW diode-pumped TEM00 1064 nm Nd:YAG ring laser.

Science.gov (United States)

Liu, Yuan; Wang, Bao-shan; Xie, Shi-yong; Bo, Yong; Wang, Peng-yuan; Zuo, Jun-wei; Xu, Yi-ting; Xu, Jia-lin; Peng, Qin-jun; Cui, Da-fu; Xu, Zu-yan

2012-04-01

We demonstrated a high average power, narrow-linewidth, quasi-CW diode-pumped Nd:YAG 1064 nm laser with near-diffraction-limited beam quality. A symmetrical three-mirror ring cavity with unidirectional operation elements and an etalon was employed to realize the narrow-linewidth laser output. Two highly efficient laser modules and a 90° quartz rotator for birefringence compensation were used for the high output power. The maximum average output power of 62.5 W with the beam quality factor M(2) of 1.15 was achieved under a pump power of 216 W at a repetition rate of 500 Hz, corresponding to the optical-to-optical conversion efficiency of 28.9%. The linewidth of the laser at the maximum output power was measured to be less than 0.2 GHz.

Dimensional characteristics of welds performed on AISI 1045 steel by means of the application of high power diode laser

International Nuclear Information System (INIS)

Sanchez-Castillo, A.; Pou, J.; Lusquinos, F.; Quintero, F.; Soto, R.; Boutinguiza, M.; Saavedra, M.; Perez-Amor, M.

2004-01-01

The named High Power diode Laser (HPDL), emits a beam of optical energy generated by diode stimulation and offers the capability of supplying levels of power up to 6 kW. The objective of this research work was to study the main welding variables and their effects on dimensional characteristics of the beads performed by means of application of this novel laser. The results obtained, show that HPDL, is an energy source able to perform welds on AISI 1045 steel plates under conduction mode, without any kind of mechanized preparation, preheating or post-weld treatment and, without filler metal application. (Author) 16 refs

High-Power DFB Diode Laser-Based CO-QEPAS Sensor: Optimization and Performance

Directory of Open Access Journals (Sweden)

Yufei Ma

2018-01-01

Full Text Available A highly sensitive carbon monoxide (CO trace gas sensor based on quartz-enhanced photoacoustic spectroscopy (QEPAS was demonstrated. A high-power distributed feedback (DFB, continuous wave (CW 2.33 μm diode laser with an 8.8 mW output power was used as the QEPAS excitation source. By optimizing the modulation depth and adding an optimum micro-resonator, compared to a bare quartz tuning fork (QTF, a 10-fold enhancement of the CO-QEPAS signal amplitude was achieved. When water vapor acting as a vibrational transfer catalyst was added to the target gas, the signal was further increased by a factor of ~7. A minimum detection limit (MDL of 11.2 ppm and a calculated normalized noise equivalent absorption (NNEA coefficient of 1.8 × 10−5 cm−1W/√Hz were obtained for the reported CO-QEPAS sensor.

Solution-Processed Phosphorescent Organic Light-Emitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency

OpenAIRE

Wang, Shumeng; Wang, Xingdong; Yao, Bing; Zhang, Baohua; Ding, Junqiao; Xie, Zhiyuan; Wang, Lixiang

2015-01-01

To realize power efficient solution-processed phosphorescent organic light-emitting diodes (s-PhOLEDs), the corresponding high driving voltage issue should be well solved. To solve it, efforts have been devoted to the exploitation of novel host or interfacial materials. However, the issues of charge trapping of phosphor and/or charge injection barrier are still serious, largely restraining the power efficiency (PE) levels. Herein, with the utilization of an exciplex-forming couple 4, 4?, 4? -...

Experimental and theoretical analysis of the dominant lateral waveguiding mechanism in 975 nm high power broad area diode lasers

International Nuclear Information System (INIS)

Crump, P; Böldicke, S; Schultz, C M; Ekhteraei, H; Wenzel, H; Erbert, G

2012-01-01

For maximum fibre-coupled power, high power broad area diode lasers must operate with small lateral far field angles at high continuous wave (CW) powers. However, these structures are laterally multi-moded, with low beam quality and wide emission angles. In order to experimentally determine the origin of the low beam quality, spectrally resolved near and far field measurements were performed for a diode laser with 50 µm stripe width. Within the range measured (CW optical output powers to 1.5 W) the laser is shown to operate in just six stable lateral modes, with spatially periodic profiles. Comparisons of the measured profiles with the results of two-dimensional modal simulation demonstrate that current-induced thermal lensing dominates the lateral waveguiding, in spite of the presence of both strong built-in index guiding and gain guiding. No evidence is seen for filamentation. Building on the diagnosis, proposals are presented for improvements to beam quality. (paper)

High-efficiency diode-pumped femtosecond Yb:YAG ceramic laser

DEFF Research Database (Denmark)

Zhou, Binbin; Wei, Z.Y.; Zou, Y.W.

2010-01-01

A highly efficient diode-end-pumped femtosecond Yb:yttrium aluminum garnet (YAG) ceramic laser was demonstrated. Pumped by a 968 nm fiber-coupled diode laser, 1.9 W mode-locked output power at a repetition rate of 64.27 MHz was obtained with 3.5 W absorbed pump power, corresponding to a slope...... efficiency of 76%. Our measurement showed that the pulse duration was 418 fs with the central wavelength of 1048 nm....

Characterization of diode-laser stacks for high-energy-class solid state lasers

Science.gov (United States)

Pilar, Jan; Sikocinski, Pawel; Pranowicz, Alina; Divoky, Martin; Crump, P.; Staske, R.; Lucianetti, Antonio; Mocek, Tomas

2014-03-01

In this work, we present a comparative study of high power diode stacks produced by world's leading manufacturers such as DILAS, Jenoptik, and Quantel. The diode-laser stacks are characterized by central wavelength around 939 nm, duty cycle of 1 %, and maximum repetition rate of 10 Hz. The characterization includes peak power, electrical-to-optical efficiency, central wavelength and full width at half maximum (FWHM) as a function of diode current and cooling temperature. A cross-check of measurements performed at HiLASE-IoP and Ferdinand-Braun-Institut (FBH) shows very good agreement between the results. Our study reveals also the presence of discontinuities in the spectra of two diode stacks. We consider the results presented here a valuable tool to optimize pump sources for ultra-high average power lasers, including laser fusion facilities.

Reliable high-power diode lasers: thermo-mechanical fatigue aspects

Science.gov (United States)

Klumel, Genady; Gridish, Yaakov; Szafranek, Igor; Karni, Yoram

2006-02-01

High power water-cooled diode lasers are finding increasing demand in biomedical, cosmetic and industrial applications, where repetitive cw (continuous wave) and pulsed cw operation modes are required. When operating in such modes, the lasers experience numerous complete thermal cycles between "cold" heat sink temperature and the "hot" temperature typical of thermally equilibrated cw operation. It is clearly demonstrated that the main failure mechanism directly linked to repetitive cw operation is thermo-mechanical fatigue of the solder joints adjacent to the laser bars, especially when "soft" solders are used. Analyses of the bonding interfaces were carried out using scanning electron microscopy. It was observed that intermetallic compounds, formed already during the bonding process, lead to the solders fatigue both on the p- and n-side of the laser bar. Fatigue failure of solder joints in repetitive cw operation reduces useful lifetime of the stacks to hundreds hours, in comparison with more than 10,000 hours lifetime typically demonstrated in commonly adopted non-stop cw reliability testing programs. It is shown, that proper selection of package materials and solders, careful design of fatigue sensitive parts and burn-in screening in the hard pulse operation mode allow considerable increase of lifetime and reliability, without compromising the device efficiency, optical power density and compactness.

High-Power and High-Efficiency 1.3- µm Superluminescent Diode With Flat-Top and Ultrawide Emission Bandwidth

KAUST Repository

Khan, Mohammed Zahed Mustafa; Alhashim, Hala H.; Ng, Tien Khee; Ooi, Boon S.

2015-01-01

We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.

High-Power and High-Efficiency 1.3- µm Superluminescent Diode With Flat-Top and Ultrawide Emission Bandwidth

KAUST Repository

Khan, Mohammed Zahed Mustafa

2015-02-01

We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.

Developing a Methodology for Elaborating a Pulsed Optical Safety Area for High Power Laser Diodes

National Research Council Canada - National Science Library

Yankov, Plamen

2006-01-01

The laser diodes are efficient sources of optical radiation. The maximum optical peak power depends on the pulse duration of the driving current pulse - reducing the pulse duration the safety peak power is increased...

Highly-reliable laser diodes and modules for spaceborne applications

Science.gov (United States)

Deichsel, E.

2017-11-01

Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

The thermal management of high power light emitting diodes

Science.gov (United States)

Hsu, Ming-Seng; Huang, Jen-Wei; Shyu, Feng-Lin

2012-10-01

Thermal management had an important influence not only in the life time but also in the efficiency of high power light emitting diodes (HPLEDs). 30 watts in a single package have become standard to the industrial fabricating of HPLEDs. In this study, we fabricated both of the AlN porous films, by vacuum sputtering, soldered onto the HPLEDs lamp to enhance both of the heat transfer and heat dissipation. In our model, the ceramic enables transfer the heat from electric device to the aluminum plate quickly and the porous increase the quality of the thermal dissipation between the PCB and aluminum plate, as compared to the industrial processing. The ceramic films were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray diffraction (XRD) diagram analysis reveals those ceramic phases were successfully grown onto the individual substrates. The morphology of ceramic films was investigated by the atomic force microscopy (AFM). The results show those porous films have high thermal conduction to the purpose. At the same time, they had transferred heat and limited work temperature, about 70°, of HPLEDs successfully.

Modular high power diode lasers with flexible 3D multiplexing arrangement optimized for automated manufacturing

Science.gov (United States)

Könning, Tobias; Bayer, Andreas; Plappert, Nora; Faßbender, Wilhelm; Dürsch, Sascha; Küster, Matthias; Hubrich, Ralf; Wolf, Paul; Köhler, Bernd; Biesenbach, Jens

2018-02-01

A novel 3-dimensional arrangement of mirrors is used to re-arrange beams from 1-D and 2-D high power diode laser arrays. The approach allows for a variety of stacking geometries, depending on individual requirements. While basic building blocks, including collimating optics, always remain the same, most adaptations can be realized by simple rearrangement of a few optical components. Due to fully automated alignment processes, the required changes can be realized in software by changing coordinates, rather than requiring customized mechanical components. This approach minimizes development costs due to its flexibility, while reducing overall product cost by using similar building blocks for a variety of products and utilizing a high grade of automation. The modules can be operated with industrial grade water, lowering overall system and maintenance cost. Stackable macro coolers are used as the smallest building block of the system. Each cooler can hold up to five diode laser bars. Micro optical components, collimating the beam, are mounted directly to the cooler. All optical assembly steps are fully automated. Initially, the beams from all laser bars propagate in the same direction. Key to the concept is an arrangement of deflectors, which re-arrange the beams into a 2-D array of the desired shape and high fill factor. Standard multiplexing techniques like polarization- or wavelengths-multiplexing have been implemented as well. A variety of fiber coupled modules ranging from a few hundred watts of optical output power to multiple kilowatts of power, as well as customized laser spot geometries like uniform line sources, have been realized.

Efficient generation of 3.5W laser light at 515nm by frequency doubling a single-frequency high power DBR tapered diode laser

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Müller, André

2017-01-01

More than 3.5 W of green light at 515 nm is generated by frequency doubling a single-frequency high power DBR tapered diode laser. The frequency doubling is performed in a cascade of PPMgLN and PPMgSLT crystals in order to reach high power and avoid thermal effects present in PPMgLN at high power...

Comparison of SHG Power Modulation by Wavelength Detuning of DFB- and DBR-Tapered Laser Diodes

DEFF Research Database (Denmark)

Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

2016-01-01

of the response of the second harmonic light to perturbations of the infrared laser diode and compare how the response differs for DFB- and DBR-Tapered laser diodes. We show that the visible light can be modulated from CW to kHz with modulation depths above 90% by wavelength detuning the laser diode.......Pulsed visible lasers are used for a number of applications such as laser displays and medical treatments. Generating this visible light by direct frequency doubling of high power diode lasers opens new possibilities on how the power modulation can be performed. We present an investigation...

Simulation study of magnetically insulated power coupling to the applied-B ion diode

International Nuclear Information System (INIS)

Rosenthal, S.E.

1992-01-01

Power coupling to the applied-B ion diode from magnetically insulated transmission lines is simply described in terms of the voltage-current characteristics of both the diode and the transmission line. The accelerator load line intersects the composite characteristic at the operating voltage and current. Using 2-D PIC simulation, the authors have investigated how modification of either the ion diode or the magnetically insulated transmission line characteristic influences power coupling. Plasma prefill can modify the ion diode characteristic; a partially opened POS in the transmission line upstream of the ion diode is a possible cause of modification of the magnetically insulated transmission line characteristic. It can be useful to consider these two aspects of power coupling separately, but they are actually not independent. A good parameter to characterize the situation is the flow impedance, given by V/(I a 2 I c 2 ) 1/2 . V is the line voltage; I a and I c are the conduction currents flowing through the anode and cathode, respectively. The flow impedance covers a range from one half the vacuum impedance, for saturated magnetically insulated flow, to just below the vacuum impedance, for highly unsaturated flow. As the term ''flow impedance'' implies, low flow impedance coincides with greater electron flow while high flow impedance coincides with less electron flow. The flow impedance is sensitive to both the transmission line and the diode impedance. They show how the two are related, using the flow impedance as a parameter

Tuning range and output power optimization of an external-cavity GaN diode laser at 455 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

In this paper we discuss how different feedback gratings affect the tuning range and the output power of external feedback diode laser systems. A tunable high-power narrow-spectrum external-cavity diode laser system around 455 nm is investigated. The laser system is based on a high-power GaN diode...... laser in a Littrow external-cavity. Both a holographic diffraction grating and a ruled diffraction grating are used as feedback elements in the external cavity. The output power, spectral bandwidth, and tunable range of the external cavity diode laser system are measured and compared with the two...... gratings at different injected currents. When the holographic grating is used, the laser system can be tuned over a range of 1.4 nm with an output power around 530 mW. When the ruled grating is used, the laser system can be tuned over a range of 6.0 nm with an output power around 80 mW. The results can...

High brightness diode lasers controlled by volume Bragg gratings

Science.gov (United States)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Wavelength stabilized high pulse power laser diodes for automotive LiDAR

Science.gov (United States)

Knigge, A.; Klehr, A.; Wenzel, H.; Zeghuzi, A.; Fricke, J.; Maaßdorf, A.; Liero, A.; Tränkle, G.

2018-03-01

Diode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components of systems for free-space communication, metrology, material processing, spectroscopy, and light detection and ranging (LiDAR) as needed for object detection and autonomous driving. Automotive LiDAR systems demand additionally a good beam quality and low wavelength shift with temperature due to the wide operating temperature span. We present here internally wavelength stabilized lasers emitting ns optical pulses from an emission aperture between 30 μm and 100 μm with peak powers of tens of Watts at wavelengths around 905 nm. The vertical structure based on AlGaAs (confinement and cladding layers) and InGaAs (active quantum well) is especially optimized for pulsed operation with respect to the implementation of a surface Bragg grating with a high reflectivity. The fabricated 6 mm long distributed Bragg reflector (DBR) broad area (BA) lasers are electrically driven by an in-house developed high-speed unit generating 3 to 10 ns long nearly rectangular shaped current pulses with amplitudes of up to 250 A. Such lasers emit optical pulses with a peak power of more than 30 W at 95 A pulse current up to a temperature of 85°C with a wavelength shift as low as 65 pm/K and a lateral beam propagation factor less than 10. The influence of the lateral aperture width and the pulse length on the beam quality will be shown. A monolithic integration of 3 DBR BA lasers on a single chip whose emission can be combined into a single beam raises the output power to more than 100 W.

The Multidisk Diode-Pumped High Power Yb:YAG Laser Amplifier of High-Intensity Laser System with 1 kHz Repetition Rate

Science.gov (United States)

Kuptsov, G. V.; Petrov, V. V.; Petrov, V. A.; Laptev, A. V.; Kirpichnikov, A. V.; Pestryakov, E. V.

2018-04-01

The source of instabilities in the multidisk diode-pumped high power Yb:YAG laser amplifier with cryogenic closed-loop cooling in the laser amplification channel of the high-intensity laser system with 1 kHz repetition rate was determined. Dissected copper mounts were designed and used to suppress instabilities and to achieve repeatability of the system. The equilibrium temperature dependency of the active elements on average power was measured. The seed laser for the multidisk amplifier was numerically simulated and designed to allow one to increase pulses output energy after the amplifier up to 500 mJ.

970-nm ridge waveguide diode laser bars for high power DWBC systems

Science.gov (United States)

Wilkens, Martin; Erbert, Götz; Wenzel, Hans; Knigge, Andrea; Crump, Paul; Maaßdorf, Andre; Fricke, Jörg; Ressel, Peter; Strohmaier, Stephan; Schmidt, Berthold; Tränkle, Günther

2018-02-01

de lasers are key components in material processing laser systems. While mostly used as pump sources for solid state or fiber lasers, direct diode laser systems using dense wavelength multiplexing have come on the market in recent years. These systems are realized with broad area lasers typically, resulting in beam quality inferior to disk or fiber lasers. We will present recent results of highly efficient ridge waveguide (RW) lasers, developed for dense-wavelength-beamcombining (DWBC) laser systems expecting beam qualities comparable to solid state laser systems and higher power conversion efficiencies (PCE). The newly developed RW lasers are based on vertical structures with an extreme double asymmetric large optical cavity. Besides a low vertical divergence these structures are suitable for RW-lasers with (10 μm) broad ridges, emitting in a single mode with a good beam quality. The large stripe width enables a lateral divergence below 10° (95 % power content) and a high PCE by a comparably low series resistance. We present results of single emitters and small test arrays under different external feedback conditions. Single emitters can be tuned from 950 nm to 975 nm and reach 1 W optical power with more than 55 % PCE and a beam quality of M2 < 2 over the full wavelength range. The spectral width is below 30 pm FWHM. 5 emitter arrays were stabilized using the same setup. Up to now we reached 3 W optical power, limited by power supply, with 5 narrow spectral lines.

Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application

International Nuclear Information System (INIS)

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Osman, Mohd Nizam

2011-01-01

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Parametric Study and Multi-Criteria Optimization in Laser Cladding by a High Power Direct Diode Laser

Science.gov (United States)

Farahmand, Parisa; Kovacevic, Radovan

2014-12-01

In laser cladding, the performance of the deposited layers subjected to severe working conditions (e.g., wear and high temperature conditions) depends on the mechanical properties, the metallurgical bond to the substrate, and the percentage of dilution. The clad geometry and mechanical characteristics of the deposited layer are influenced greatly by the type of laser used as a heat source and process parameters used. Nowadays, the quality of fabricated coating by laser cladding and the efficiency of this process has improved thanks to the development of high-power diode lasers, with power up to 10 kW. In this study, the laser cladding by a high power direct diode laser (HPDDL) as a new heat source in laser cladding was investigated in detail. The high alloy tool steel material (AISI H13) as feedstock was deposited on mild steel (ASTM A36) by a HPDDL up to 8kW laser and with new design lateral feeding nozzle. The influences of the main process parameters (laser power, powder flow rate, and scanning speed) on the clad-bead geometry (specifically layer height and depth of the heat affected zone), and clad microhardness were studied. Multiple regression analysis was used to develop the analytical models for desired output properties according to input process parameters. The Analysis of Variance was applied to check the accuracy of the developed models. The response surface methodology (RSM) and desirability function were used for multi-criteria optimization of the cladding process. In order to investigate the effect of process parameters on the molten pool evolution, in-situ monitoring was utilized. Finally, the validation results for optimized process conditions show the predicted results were in a good agreement with measured values. The multi-criteria optimization makes it possible to acquire an efficient process for a combination of clad geometrical and mechanical characteristics control.

High-power dual-wavelength external-Cavity diode laser based on tapered amplifier with tunable terahertz frequency difference

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2011-01-01

Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5:0 THz......, this is the highest output power from a dual-wavelength diode laser system operating with tunable terahertz frequency difference. © 2011 Optical Society of America....

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

Science.gov (United States)

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Efficient high power operation of erbium 3 µm fibre laser diode-pumped at 975 nm

NARCIS (Netherlands)

Jackson, S.D.; King, T.A.; Pollnau, Markus

2000-01-01

Efficient CW operation of a 2.71 um Er,Pr:ZBLAN double-clad fibre laser pumped with a single diode laser operating at a wavelength of 975 nm is described. A maximum output power of 0.5 W and a slope efficiency of 25% (with respect to the launched pump power) were obtained. Threshold pump powers of <

Diode Pumped Alkaline Laser System: A High Powered, Low SWaP Directed Energy Option for Ballistic Missile Defense High-Level Summary - April 2017

Energy Technology Data Exchange (ETDEWEB)

Wisoff, P. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2017-04-28

The Diode-Pumped Alkali Laser (DPAL) system is an R&D effort funded by the Missile Defense Agency (MDA) underway at Lawrence Livermore National Laboratory (LLNL). MDA has described the characteristics needed for a Boost Phase directed energy (DE) weapon to work against ICBM-class threat missiles. In terms of the platform, the mission will require a high altitude Unmanned Aerial Vehicle (UAV) that can fly in the “quiet” stratosphere and display long endurance – i.e., days on station. In terms of the laser, MDA needs a high power, low size and weight laser that could be carried by such a platform and deliver lethal energy to an ICBM-class threat missile from hundreds of kilometers away. While both the military and industry are pursuing Directed Energy for tactical applications, MDA’s objectives pose a significantly greater challenge than other current efforts in terms of the power needed from the laser, the low size and weight required, and the range, speed, and size of the threat missiles. To that end, MDA is funding two R&D efforts to assess the feasibility of a high power (MWclass) and low SWaP (size, weight and power) laser: a fiber combining laser (FCL) project at MIT’s Lincoln Laboratory, and LLNL’s Diode-Pumped Alkali Laser (DPAL) system.

Expansion-matched passively cooled heatsinks with low thermal resistance for high-power diode laser bars

Science.gov (United States)

Leers, Michael; Scholz, Christian; Boucke, Konstantin; Poprawe, Reinhart

2006-02-01

The lifetime of high-power diode lasers, which are cooled by standard copper heatsinks, is limited. The reasons are the aging of the indium solder normally employed as well as the mechanical stress caused by the mismatch between the copper heatsink (16 - 17ppm/K) and the GaAs diode laser bars (6 - 7.5 ppm/K). For micro - channel heatsinks corrosion and erosion of the micro channels limit the lifetime additionally. The different thermal behavior and the resulting stress cannot be compensated totally by the solder. Expansion matched heatsink materials like tungsten-copper or aluminum nitride reduce this stress. A further possible solution is a combination of copper and molybdenum layers, but all these materials have a high thermal resistance in common. For high-power electronic or low cost medical applications novel materials like copper/carbon compound, compound diamond or high-conductivity ceramics were developed during recent years. Based on these novel materials, passively cooled heatsinks are designed, and thermal and mechanical simulations are performed to check their properties. The expansion of the heatsink and the induced mechanical stress between laser bar and heatsink are the main tasks for the simulations. A comparison of the simulation with experimental results for different material combinations illustrates the advantages and disadvantages of the different approaches. Together with the boundary conditions the ideal applications for packaging with these materials are defined. The goal of the development of passively-cooled expansion-matched heatsinks has to be a long-term reliability of several 10.000h and a thermal resistance below 1 K/W.

High brightness diode-pumped organic solid-state laser

Energy Technology Data Exchange (ETDEWEB)

Zhao, Zhuang; Mhibik, Oussama; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien, E-mail: sebastien.forget@univ-paris13.fr [Université Paris 13, Sorbonne Paris Cité, Laboratoire de Physique des Lasers, F-93430, Villetaneuse (France); CNRS, UMR 7538, LPL, F-93430, Villetaneuse (France)

2015-02-02

High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

650-nm-band high-power and highly reliable laser diodes with a window-mirror structure

Science.gov (United States)

Shima, Akihiro; Hironaka, Misao; Ono, Ken-ichi; Takemi, Masayoshi; Sakamoto, Yoshifumi; Kunitsugu, Yasuhiro; Yamashita, Koji

1998-05-01

An active layer structure with 658 nm-emission at 25 degrees Celsius has been optimized in order to reduce the operating current of the laser diodes (LD) under high temperature condition. For improvement of the maximum output power and the reliability limited by mirror degradation, we have applied a zinc-diffused-type window-mirror structure which prevents the optical absorption at the mirror facet. As a result, the CW output power of 50 mW is obtained even at 80 degrees Celsius for a 650 micrometer-long window-mirror LD. In addition, the maximum light output power over 150 mW at 25 degrees Celsius has been realized without any optical mirror damage. In the aging tests, the LDs have been operating for over 2,500 - 5,000 hours under the CW condition of 30 - 50 mW at 60 degrees Celsius. The window-mirror structure also enables reliable 60 degree Celsius, 30 mW, CW operation of the LDs with 651 nm- emission at 25 degrees Celsius. Moreover, the maximum output power of around 100 mW even at 80 degrees Celsius and reliable 2,000-hour operation at 60 degrees Celsius, 70 mW have been realized for the first time by 659 nm LDs with a long cavity length of 900 micrometers.

Power Scaling of Nonlinear Frequency Converted Tapered Diode Lasers for Biophotonics

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Müller, A.

2014-01-01

Diode lasers have proven to be versatile light sources for a wide range of applications. Nonlinear frequency conversion of high brightness diode lasers has recently resulted in visible light power levels in the watts range enabling an increasing number of applications within biophotonics. This re...... and efficiency are included. Application examples within pumping of mode-locked Ti:sapphire lasers and implementation of such lasers in optical coherence tomography are presented showing the application potential of these lasers....

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Directory of Open Access Journals (Sweden)

Abdul Manaf Hashim

2011-08-01

Full Text Available A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT structure. Current-voltage (I-V measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-06-01

TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.

High current, high bandwidth laser diode current driver

Science.gov (United States)

Copeland, David J.; Zimmerman, Robert K., Jr.

1991-01-01

A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

Properties of surface layer of X40CrMoV5-1 in the relation to remelting conditions by the use of a high power diode laser

International Nuclear Information System (INIS)

Dobrzanski, L.A.; Bonek, M.; Klimpel, A.

2003-01-01

Investigations included remelting experiments on the X40CrMoV5-1 hot-work steel with the high power diode laser. Tests have been made using the high power diode laser (HPDL) in the technological process of remelting. The effect of remelting parameters on structure and properties of its surface layer, as well as on remelting geometry and shape. The influence of the technological conditions and their effect on the mechanical properties of the surface layer, and especially its hardness has been tested. Dependence of the microhardness changes, on the degree of the laser beam influence on the treated surface, and mostly on the hardness increase in the remelted layer is presented. The influence of remelting process parameters on the structure of substrate material is presented. Guidelines for remelting of the X40CrMoV5-1 steel surface using the high power diode laser feature the outcome of the investigation aimed at obtaining its optimum mechanical and working properties. (author)

Modification of diode characteristics by electron back-scatter from high-atomic-number anodes

International Nuclear Information System (INIS)

Mosher, D.; Cooperstein, G.; Rose, D.V.; Swanekamp, S.B.

1996-01-01

In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs

Modification of diode characteristics by electron back-scatter from high-atomic-number anodes

Energy Technology Data Exchange (ETDEWEB)

Mosher, D; Cooperstein, G [Naval Research Laboratory, Washington, DC (United States); Rose, D V; Swanekamp, S B [JAYCOR, Vienna, VA (United States)

1997-12-31

In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs.

High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

Science.gov (United States)

Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

2017-07-01

High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

Ultrasensitive, real-time trace gas detection using a high-power, multimode diode laser and cavity ringdown spectroscopy.

Science.gov (United States)

Karpf, Andreas; Qiao, Yuhao; Rao, Gottipaty N

2016-06-01

We present a simplified cavity ringdown (CRD) trace gas detection technique that is insensitive to vibration, and capable of extremely sensitive, real-time absorption measurements. A high-power, multimode Fabry-Perot (FP) diode laser with a broad wavelength range (Δλlaser∼0.6  nm) is used to excite a large number of cavity modes, thereby reducing the detector's susceptibility to vibration and making it well suited for field deployment. When detecting molecular species with broad absorption features (Δλabsorption≫Δλlaser), the laser's broad linewidth removes the need for precision wavelength stabilization. The laser's power and broad linewidth allow the use of on-axis cavity alignment, improving the signal-to-noise ratio while maintaining its vibration insensitivity. The use of an FP diode laser has the added advantages of being inexpensive, compact, and insensitive to vibration. The technique was demonstrated using a 1.1 W (λ=400  nm) diode laser to measure low concentrations of nitrogen dioxide (NO2) in zero air. A sensitivity of 38 parts in 1012 (ppt) was achieved using an integration time of 128 ms; for single-shot detection, 530 ppt sensitivity was demonstrated with a measurement time of 60 μs, which opens the door to sensitive measurements with extremely high temporal resolution; to the best of our knowledge, these are the highest speed measurements of NO2 concentration using CRD spectroscopy. The reduced susceptibility to vibration was demonstrated by introducing small vibrations into the apparatus and observing that there was no measurable effect on the sensitivity of detection.

Pulsed corona generation using a diode-based pulsed power generator

Science.gov (United States)

Pemen, A. J. M.; Grekhov, I. V.; van Heesch, E. J. M.; Yan, K.; Nair, S. A.; Korotkov, S. V.

2003-10-01

Pulsed plasma techniques serve a wide range of unconventional processes, such as gas and water processing, hydrogen production, and nanotechnology. Extending research on promising applications, such as pulsed corona processing, depends to a great extent on the availability of reliable, efficient and repetitive high-voltage pulsed power technology. Heavy-duty opening switches are the most critical components in high-voltage pulsed power systems with inductive energy storage. At the Ioffe Institute, an unconventional switching mechanism has been found, based on the fast recovery process in a diode. This article discusses the application of such a "drift-step-recovery-diode" for pulsed corona plasma generation. The principle of the diode-based nanosecond high-voltage generator will be discussed. The generator will be coupled to a corona reactor via a transmission-line transformer. The advantages of this concept, such as easy voltage transformation, load matching, switch protection and easy coupling with a dc bias voltage, will be discussed. The developed circuit is tested at both a resistive load and various corona reactors. Methods to optimize the energy transfer to a corona reactor have been evaluated. The impedance matching between the pulse generator and corona reactor can be significantly improved by using a dc bias voltage. At good matching, the corona energy increases and less energy reflects back to the generator. Matching can also be slightly improved by increasing the temperature in the corona reactor. More effective is to reduce the reactor pressure.

Nanoscale coatings for erosion and corrosion protection of copper microchannel coolers for high powered laser diodes

Science.gov (United States)

Flannery, Matthew; Fan, Angie; Desai, Tapan G.

2014-03-01

High powered laser diodes are used in a wide variety of applications ranging from telecommunications to industrial applications. Copper microchannel coolers (MCCs) utilizing high velocity, de-ionized water coolant are used to maintain diode temperatures in the recommended range to produce stable optical power output and control output wavelength. However, aggressive erosion and corrosion attack from the coolant limits the lifetime of the cooler to only 6 months of operation. Currently, gold plating is the industry standard for corrosion and erosion protection in MCCs. However, this technique cannot perform a pin-hole free coating and furthermore cannot uniformly cover the complex geometries of current MCCs involving small diameter primary and secondary channels. Advanced Cooling Technologies, Inc., presents a corrosion and erosion resistant coating (ANCERTM) applied by a vapor phase deposition process for enhanced protection of MCCs. To optimize the coating formation and thickness, coated copper samples were tested in 0.125% NaCl solution and high purity de-ionized (DIW) flow loop. The effects of DIW flow rates and qualities on erosion and corrosion of the ANCERTM coated samples were evaluated in long-term erosion and corrosion testing. The robustness of the coating was also evaluated in thermal cycles between 30°C - 75°C. After 1000 hours flow testing and 30 thermal cycles, the ANCERTM coated copper MCCs showed a corrosion rate 100 times lower than the gold plated ones and furthermore were barely affected by flow rates or temperatures thus demonstrating superior corrosion and erosion protection and long term reliability.

High power visible diode laser for the treatment of eye diseases by laser coagulation

Science.gov (United States)

Heinrich, Arne; Hagen, Clemens; Harlander, Maximilian; Nussbaumer, Bernhard

2015-03-01

We present a high power visible diode laser enabling a low-cost treatment of eye diseases by laser coagulation, including the two leading causes of blindness worldwide (diabetic retinopathy, age-related macular degeneration) as well as retinopathy of prematurely born children, intraocular tumors and retinal detachment. Laser coagulation requires the exposure of the eye to visible laser light and relies on the high absorption of the retina. The need for treatment is constantly increasing, due to the demographic trend, the increasing average life expectancy and medical care demand in developing countries. The World Health Organization reacts to this demand with global programs like the VISION 2020 "The right to sight" and the following Universal Eye Health within their Global Action Plan (2014-2019). One major point is to motivate companies and research institutes to make eye treatment cheaper and easily accessible. Therefore it becomes capital providing the ophthalmology market with cost competitive, simple and reliable technologies. Our laser is based on the direct second harmonic generation of the light emitted from a tapered laser diode and has already shown reliable optical performance. All components are produced in wafer scale processes and the resulting strong economy of scale results in a price competitive laser. In a broader perspective the technology behind our laser has a huge potential in non-medical applications like welding, cutting, marking and finally laser-illuminated projection.

Large-area high-power VCSEL pump arrays optimized for high-energy lasers

Science.gov (United States)

Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

2012-06-01

Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

ICAN: High power neutral beam generation

International Nuclear Information System (INIS)

Moustaizis, S.D.; Lalousis, P.; Perrakis, K.; Auvray, P.; Larour, J.; Ducret, J.E.; Balcou, P.

2015-01-01

During the last few years there is an increasing interest on the development of alternative high power new negative ion source for Tokamak applications. The proposed new neutral beam device presents a number of advantages with respect to: the density current, the acceleration voltage, the relative compact dimension of the negative ion source, and the coupling of a high power laser beam for photo-neutralization of the negative ion beam. Here we numerically investigate, using a multi- fluid 1-D code, the acceleration and the extraction of high power ion beam from a Magnetically Insulated Diode (MID). The diode configuration will be coupled to a high power device capable of extracting a current up to a few kA with an accelerating voltage up to MeV. An efficiency of up to 92% of the coupling of the laser beam, is required in order to obtain a high power, up to GW, neutral beam. The new high energy, high average power, high efficiency (up to 30%) ICAN fiber laser is proposed for both the plasma generation and the photo-neutralizer configuration. (authors)

980 nm high brightness external cavity broad area diode laser bar

DEFF Research Database (Denmark)

Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

2009-01-01

We demonstrate of-axis spectral beam combining applied to a 980 nm high power broad area diode laser bar. The experiments yielded 9 W of optical power at 30 A of operating current and the measured M2 values of the combined beam from 12 emitters were 1.9 and 6.4 for the fast and the slow axis......, respectively. The slow axis beam quality was 5-6 times better than the value obtained from a single emitter in free running mode. A high brightness of 79 MW/cm2-str was achieved using this configuration. To our knowledge, this is the highest brightness level ever achieved from a broad area diode laser bar....

Optical phase dynamics in mutually coupled diode laser systems exhibiting power synchronization

International Nuclear Information System (INIS)

Pal, Vishwa; Ghosh, R; Prasad, Awadhesh

2011-01-01

We probe the physical mechanism behind the known phenomenon of power synchronization of two diode lasers that are mutually coupled via their delayed optical fields. In a diode laser, the amplitude and the phase of the optical field are coupled by the so-called linewidth enhancement factor, α. In this work, we explore the role of optical phases of the electric fields in amplitude (and hence power) synchronization through α in such mutually delay-coupled diode laser systems. Our numerical results show that the synchronization of optical phases drives the powers of lasers to synchronized death regimes. We also find that as α varies for different diode lasers, the system goes through a sequence of in-phase amplitude-death states. Within the windows between successive amplitude-death regions, the cross-correlation between the field amplitudes exhibits a universal power-law behaviour with respect to α.

Note: An online testing method for lifetime projection of high power light-emitting diode under accelerated reliability test.

Science.gov (United States)

Chen, Qi; Chen, Quan; Luo, Xiaobing

2014-09-01

In recent years, due to the fast development of high power light-emitting diode (LED), its lifetime prediction and assessment have become a crucial issue. Although the in situ measurement has been widely used for reliability testing in laser diode community, it has not been applied commonly in LED community. In this paper, an online testing method for LED life projection under accelerated reliability test was proposed and the prototype was built. The optical parametric data were collected. The systematic error and the measuring uncertainty were calculated to be within 0.2% and within 2%, respectively. With this online testing method, experimental data can be acquired continuously and sufficient amount of data can be gathered. Thus, the projection fitting accuracy can be improved (r(2) = 0.954) and testing duration can be shortened.

Laser-assisted selective fusing of thermal sprayed Ni-based self-fluxing alloys by using high-power diode lasers

Science.gov (United States)

Chun, Eun-Joon; Kim, Min-Su; Nishikawa, Hiroshi; Park, Changkyoo; Suh, Jeong

2018-03-01

Fusing treatment of Ni-based self-fluxing alloys (Metco-16C and 1276F) was performed using high-power diode lasers to control the temperature of the substrate's surface in real time. The effects of the fusing treatment temperature on the microstructural change and hardness distribution were also investigated. For Metco-16C and 1276F, the macrostructural inhomogeneity (voids) within the thermal sprayed layer decreased considerably as the fusing temperature increased. For both self-fluxing alloys, the optimal temperature for fusing was approximately 1423 K (for Metco-16C) and 1373 K (for 1276F), both of which are within the solid state temperature range; these temperatures maximize the alloy hardness together with the macrostructural homogeneity. In this temperature range, the microstructure consists of a lamellar-structured matrix phase with fine (diode laser system.

Combining high power diode lasers using fiber bundles for beam delivery in optoacoustic endoscopy applications

Science.gov (United States)

Gawali, Sandeep Babu; Leggio, Luca; Sánchez, Miguel; Rodríguez, Sergio; Dadrasnia, Ehsan; Gallego, Daniel C.; Lamela, Horacio

2016-05-01

Optoacoustic (OA) effect refers to the generation of the acoustic waves due to absorption of light energy in a biological tissue. The incident laser pulse is absorbed by the tissue, resulting in the generation of ultrasound that is typically detected by a piezoelectric detector. Compared to other techniques, the advantage of OA imaging (OAI) technique consists in combining the high resolution of ultrasound technique with the high contrast of optical imaging. Generally, Nd:YAG and OPO systems are used for the generation of OA waves but their use in clinical environment is limited for many aspects. On the other hand, high-power diode lasers (HPDLs) emerge as potential alternative. However, the power of HPDLs is still relatively low compared to solid-state lasers. We show a side-by-side combination of several HPDLs in an optical fiber bundle to increase the amount of power for OA applications. Initially, we combine the output optical power of several HPDLs at 905 nm using two 7 to 1 round optical fiber bundles featuring a 675 μm and 1.2 mm bundle aperture. In a second step, we couple the output light of these fiber bundles to a 600 μm core diameter endoscopic fiber, reporting the corresponding coupling efficiencies. The fiber bundles with reasonable small diameter are likely to be used for providing sufficient light energy to potential OA endoscopy (OAE) applications.

A diode-pumped continuous-wave Nd:YAG laser with an average output power of 1 kW

International Nuclear Information System (INIS)

Lee, Sung Man; Cha, Byung Heon; Kim, Cheol Jung

2004-01-01

A diode-pumped Nd:YAG laser with an average output power of 1 kW is developed for industrial applications, such as metal cutting, precision welding, etc. To develop such a diode-pumped high power solid-state laser, a series of laser modules have been used in general with and without thermal birefringence compensation. For example, Akiyama et al. used three laser modules to obtain a output power of 5.4 kW CW.1 In the side-pumped Nd:YAG laser, which is a commonly used pump scheme to obtain high output power, the crystal rod has a short thermal focal length at a high input pump power, and the short thermal focal length in turn leads to beam distortion within a laser resonator. Therefore, to achieve a high output power with good stability, isotropic beam profile, and high optical efficiency, the detailed analysis of the resonator stability condition depending on both mirror distances and a crystal separation is essential

High Power Fiber Laser Test Bed

Data.gov (United States)

Federal Laboratory Consortium — This facility, unique within DoD, power-combines numerous cutting-edge fiber-coupled laser diode modules (FCLDM) to integrate pumping of high power rare earth-doped...

Development of high-power diode lasers with beam parameter product below 2 mm×mrad within the BRIDLE project

Science.gov (United States)

Crump, P.; Decker, J.; Winterfeldt, M.; Fricke, J.; Maaßdorf, A.; Erbert, G.; Tränkle, G.

2015-03-01

High power broad-area diode lasers are the most efficient source of optical energy, but cannot directly address many applications due to their high lateral beam parameter product BPP = 0.25 × ΘL 95%× W95% (ΘL95% and W95% are emission angle and aperture at 95% power content), with BPP > 3 mm×mrad for W95%~90μm. We review here progress within the BRIDLE project, that is developing diode lasers with BPP BPP. TPLs monolithically combine a single mode region at the rear facet with a tapered amplifier, restricting the device to one lateral mode for lowest BPP. TPLs fabricated using ELoD (Extremely Low Divergence) epitaxial designs are shown to operate with BPP below 2mm×mrad, but at cost of low efficiency (BPP 50% to output of > 7 W, so are currently the preferred design. In studies to further reduce BPP, lateral resonant anti-guiding structures have also been assessed. Optimized anti-guiding designs are shown to reduce BPP by 1 mm×mrad in conventional 90 μm stripe BA-lasers, without power penalty. In contrast, no BPP improvement is observed in NBA lasers, even though their spectrum indicates they are restricted to single mode operation. Mode filtering alone is therefore not sufficient, and further measures will be needed for reduced BPP.

Strong doping of the n-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

Science.gov (United States)

Ryvkin, Boris S.; Avrutin, Eugene A.; Kostamovaara, Juha T.

2017-12-01

An analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the direct TPA effect. The resulting losses are compared with those in an identical structure with a weakly doped waveguide, and shown to be substantially lower, resulting in a significant improvement in the output power and efficiency in the structure with a strongly doped waveguide.

Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

Science.gov (United States)

Been, J. F.

1973-01-01

The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

Radiation effects in semiconductor laser diode arrays

International Nuclear Information System (INIS)

Carson, R.F.

1988-01-01

The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

High power vertical stacked and horizontal arrayed diode laser bar development based on insulation micro-channel cooling (IMCC) and hard solder bonding technology

Science.gov (United States)

Wang, Boxue; Jia, Yangtao; Zhang, Haoyu; Jia, Shiyin; Liu, Jindou; Wang, Weifeng; Liu, Xingsheng

2018-02-01

An insulation micro-channel cooling (IMCC) has been developed for packaging high power bar-based vertical stack and horizontal array diode lasers, which eliminates many issues caused in its congener packaged by commercial copper formed micro-channel cooler(MCC), such as coefficient of thermal expansion (CTE) mismatch between cooler and diode laser bar, high coolant quality requirement (DI water) and channel corrosion and electro-corrosion induced by DI water if the DI-water quality is not well maintained The IMCC cooler separates water flow route and electrical route, which allows tap-water as coolant without electro-corrosion and therefore prolongs cooler lifetime dramatically and escalated the reliability of these diode lasers. The thickness of ceramic and copper in an IMCC cooler is well designed to minimize the CTE mismatch between laser bar and cooler, consequently, a very low "SMILE" of the laser bar can be achieved for small fast axis divergence after collimation. In additional, gold-tin hard solder bonding technology was also developed to minimize the risk of solder electromigration at high current density and thermal fatigue under hard-pulse operation mode. Testing results of IMCC packaged diode lasers are presented in this report.

A Single-Stage High-Power-Factor Light-Emitting Diode (LED Driver with Coupled Inductors for Streetlight Applications

Directory of Open Access Journals (Sweden)

Chun-An Cheng

2017-02-01

Full Text Available This paper presents and implements a single-stage high-power-factor light-emitting diode (LED driver with coupled inductors, suitable for streetlight applications. The presented LED driver integrates an interleaved buck-boost power factor correction (PFC converter with coupled inductors and a half-bridge-type series-resonant converter cascaded with a full-bridge rectifier into a single-stage power conversion circuit. Coupled inductors inside the interleaved buck-boost PFC converter sub-circuit are designed to operate in discontinuous conduction mode (DCM for achieving input-current shaping, and the half-bridge-type series resonant converter cascaded with a full-bridge rectifier is designed for obtaining zero-voltage switching (ZVS on two power switches to reduce their switching losses. Analysis of operational modes and design equations for the presented LED driver are described and included. In addition, the presented driver features a high power factor, low total harmonic distortion (THD of input current, and soft switching. Finally, a prototype driver is developed and implemented to supply a 165-W-rated LED streetlight module with utility-line input voltages ranging from 210 to 230 V. Experimental results demonstrate that high power factor (>0.99, low utility-line current THD (<7%, low-output voltage ripples (<1%, low-output current ripples (<10%, and high circuit efficiency (>90% are obtained in the presented single-stage driver for LED streetlight applications.

Multi-kW high-brightness fiber coupled diode laser based on two dimensional stacked tailored diode bars

Science.gov (United States)

Bayer, Andreas; Unger, Andreas; Köhler, Bernd; Küster, Matthias; Dürsch, Sascha; Kissel, Heiko; Irwin, David A.; Bodem, Christian; Plappert, Nora; Kersten, Maik; Biesenbach, Jens

2016-03-01

The demand for high brightness fiber coupled diode laser devices in the multi kW power region is mainly driven by industrial applications for materials processing, like brazing, cladding and metal welding, which require a beam quality better than 30 mm x mrad and power levels above 3kW. Reliability, modularity, and cost effectiveness are key factors for success in the market. We have developed a scalable and modular diode laser architecture that fulfills these requirements through use of a simple beam shaping concept based on two dimensional stacking of tailored diode bars mounted on specially designed, tap water cooled heat sinks. The base element of the concept is a tailored diode laser bar with an epitaxial and lateral structure designed such that the desired beam quality in slow-axis direction can be realized without using sophisticated beam shaping optics. The optical design concept is based on fast-axis collimator (FAC) and slow-axis collimator (SAC) lenses followed by only one additional focusing optic for efficient coupling into a 400 μm fiber with a numerical aperture (NA) of 0.12. To fulfill the requirements of scalability and modularity, four tailored bars are populated on a reduced size, tap water cooled heat sink. The diodes on these building blocks are collimated simply via FAC and SAC. The building blocks can be stacked vertically resulting in a two-dimensional diode stack, which enables a compact design of the laser source with minimum beam path length. For a single wavelength, up to eight of these building blocks, implying a total of 32 tailored bars, can be stacked into a submodule, polarization multiplexed, and coupled into a 400 μm, 0.12NA fiber. Scalability into the multi kW region is realized by wavelength combining of replaceable submodules in the spectral range from 900 - 1100 nm. We present results of a laser source based on this architecture with an output power of more than 4 kW and a beam quality of 25 mm x mrad.

2000W high beam quality diode laser for direct materials processing

Science.gov (United States)

Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Gao, Jing; Pan, Fei; Wang, Zhi-yong

2011-11-01

This article describes high beam quality and kilowatt-class diode laser system for direct materials processing, using optical design software ZEMAX® to simulate the diode laser optical path, including the beam shaping, collimation, coupling, focus, etc.. In the experiment, the diode laser stack of 808nm and the diode laser stack of 915nm were used for the wavelength coupling, which were built vertical stacks up to 16 bars. The threshold current of the stack is 6.4A, the operating current is 85A and the output power is 1280W. Through experiments, after collimating the diode laser beam with micro-lenses, the fast axis BPP of the stack is less than 60mm.mrad, and the slow-axis BPP of the stack is less than 75mm.mrad. After shaping the laser beam and improving the beam quality, the fast axis BPP of the stack is still 60mm.mrad, and the slow-axis BPP of the stack is less than 19mm.mrad. After wavelength coupling and focusing, ultimately the power of 2150W was obtained, focal spot size of 1.5mm * 1.2mm with focal length 300mm. The laser power density is 1.2×105W/cm2, and that can be used for metal remelting, alloying, cladding and welding. The total optical coupling conversion efficiency is 84%, and the total electrical - optical conversion efficiency is 50%.

Reliability aspects and facet damage in high-power emission from (AlGa)As cw laser diodes at room temperature

International Nuclear Information System (INIS)

Kressel, H.; Ladany, I.

1975-01-01

Factors are described that limit the optical power output from (AlGa)As laser diodes (lambda = 8100 to 8300 A) operating cw at room temperature with uncoated facets. Rapid laser ''catastrophic'' degradation due to facet damage (in contrast to ''bulk'' phenomena previously considered) has been found to occur as a result of excessive optical flux density at the facets. The diodes studied are capable of initial cw power emission values of 25 to 100 mW from one facet depending on their dimensions. Data are presented showing long-term constant-current operation at power levels below these maximum values. Preliminary data are also presented on devices utilizing dielectric facet coatings to minimize facet damage. (U.S.)

Electro-thermal analysis and optimisation of edge termination of power diode supported by 2-D/3-D numerical modelling and simulation

International Nuclear Information System (INIS)

Príbytný, P; Donoval, D; Chvála, A; Marek, J; Molnár, M

2014-01-01

Numerical modelling and simulation provide an efficient tool for analysis and optimization of device structure design. In this paper we present the analysis and the geometry optimization of the power module with high power pin diode structure supported by the advanced 2-D/3-D mixed-mode electro-thermal device simulation. The structure under investigation is P + NN + power diode device designed for high reverse voltages and very high forward currents, with a maximum forward surge current up to 2.7 kA.

High speed visible light communication using blue GaN laser diodes

Science.gov (United States)

Watson, S.; Viola, S.; Giuliano, G.; Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Targowski, G.; Watson, M. A.; White, H.; Rowe, D.; Laycock, L.; Kelly, A. E.

2016-10-01

GaN-based laser diodes have been developed over the last 20 years making them desirable for many security and defence applications, in particular, free space laser communications. Unlike their LED counterparts, laser diodes are not limited by their carrier lifetime which makes them attractive for high speed communication, whether in free space, through fiber or underwater. Gigabit data transmission can be achieved in free space by modulating the visible light from the laser with a pseudo-random bit sequence (PRBS), with recent results approaching 5 Gbit/s error free data transmission. By exploiting the low-loss in the blue part of the spectrum through water, data transmission experiments have also been conducted to show rates of 2.5 Gbit/s underwater. Different water types have been tested to monitor the effect of scattering and to see how this affects the overall transmission rate and distance. This is of great interest for communication with unmanned underwater vehicles (UUV) as the current method using acoustics is much slower and vulnerable to interception. These types of laser diodes can typically reach 50-100 mW of power which increases the length at which the data can be transmitted. This distance could be further improved by making use of high power laser arrays. Highly uniform GaN substrates with low defectivity allow individually addressable laser bars to be fabricated. This could ultimately increase optical power levels to 4 W for a 20-emitter array. Overall, the development of GaN laser diodes will play an important part in free space optical communications and will be vital in the advancement of security and defence applications.

Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

Science.gov (United States)

Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

2018-05-01

We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

Performance of the cold powered diodes and diode leads in the main magnets of the LHC

CERN Document Server

Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

2015-01-01

During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

High-power diode laser in the circumvestibular incision for Le Fort I osteotomy in orthognathic surgery: a prospective case series study.

Science.gov (United States)

Jaeger, Filipe; Chiavaioli, Gustavo Marques; de Toledo, Guilherme Lacerda; Freire-Maia, Belini; Amaral, Marcio Bruno Figueiredo; Mesquita, Ricardo Alves

2018-01-01

The incisions during orthognathic surgery are classically performed with conventional scalpel or electrocautery. Considering that the high-power diode laser surgery may provide advantages when compared to conventional incision techniques, the current study aimed to present a prospective case series of patients submitted to circumvestibular incision for Le Fort I osteotomy. Ten patients with dentofacial deformities who underwent to rapid assisted maxillary expansion or bimaxillary orthognathic surgery were enrolled in the study. All incisions were performed by a single surgeon using an 808-nm diode laser, with an optical fiber of 600 μm, at a power of 2.5 W, in a continuous-wave mode. The performance of the incision was evaluated by incision velocity, bleeding, edema, secondary infection, clinical healing, and pain. The velocity of the incision ranged from 0.10 to 0.20 mm/s (mean 0.13 ± 0.03 mm/s). Considering bleeding during the soft tissue incision, all surgeries were classified as absent bleeding. All patients presented a clinical healing of the surgical wound in a period that range from 3 to 5 weeks and experienced swelling during the follow-up period. On average, approximately 50% of the swelling had resolved after the third postoperative week, and 28.8% of swelling remained after 2 months after the surgery. The pain decreased after 2 and 3 days, and 90.0% of the patients reported no pain after 7 postoperative days. High-power diode laser is effective and safety during circumvestibular incisions for Le Fort I osteotomy in orthognathic surgery decreasing bleeding, surgery time, pain, and edema after orthognathic surgery.

CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

KAUST Repository

Pourhashemi, A.

2016-10-11

Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

KAUST Repository

Pourhashemi, A.; Farrell, R.M.; Cohen, D.A.; Becerra, D.L.; DenBaars, S.P.; Nakamura, S.

2016-01-01

Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

A high-power diode-laser-pumped CW Nd:YAG laser using a stable-unstable resonator

International Nuclear Information System (INIS)

Mudge, M.; Ostermeyer, P.; Veitch, J.; Munch, J.; Hamilton, M.W.

2000-01-01

Full text: The design and operation of a power-scalable diode-laser-pumped CW Nd:YAG zigzag slab laser that uses a stable-unstable resonator with a graded reflectivity mirror as an output coupler is described. We demonstrate control of the thermal lens strength in the unstable plane and weak thermal lensing in the stable plane that is independent of pump power, vital for efficient scalability. This enabled CW operation of the stable-unstable resonator with excellent near- and far-field beam quality

Highly efficient greenish-blue platinum-based phosphorescent organic light-emitting diodes on a high triplet energy platform

Energy Technology Data Exchange (ETDEWEB)

Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.; Lu, Z. H., E-mail: zhenghong.lu@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4 (Canada); Wang, X.; Wang, S., E-mail: wangs@chem.queensu.ca [Department of Chemistry, Queen' s University, 90 Bader Lane, Kingston, Ontario K7L 3N6 (Canada); Yang, C. [Department of Chemistry, Wuhan University, Wuhan 430072 (China)

2014-04-28

We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

Adjustable mounting device for high-volume production of beam-shaping systems for high-power diode lasers

Science.gov (United States)

Haag, Sebastian; Bernhardt, Henning; Rübenach, Olaf; Haverkamp, Tobias; Müller, Tobias; Zontar, Daniel; Brecher, Christian

2015-02-01

In many applications for high-power diode lasers, the production of beam-shaping and homogenizing optical systems experience rising volumes and dynamical market demands. The automation of assembly processes on flexible and reconfigurable machines can contribute to a more responsive and scalable production. The paper presents a flexible mounting device designed for the challenging assembly of side-tab based optical systems. It provides design elements for precisely referencing and fixating two optical elements in a well-defined geometric relation. Side tabs are presented to the machine allowing the application of glue and a rotating mechanism allows the attachment to the optical elements. The device can be adjusted to fit different form factors and it can be used in high-volume assembly machines. The paper shows the utilization of the device for a collimation module consisting of a fast-axis and a slow-axis collimation lens. Results regarding the repeatability and process capability of bonding side tab assemblies as well as estimates from 3D simulation for overall performance indicators achieved such as cycle time and throughput will be discussed.

Power ion beam production in a magnetic-insulated diode placed in a circuit with an inductive storage with a plasmoerosion circuit breaker

International Nuclear Information System (INIS)

Anan'in, P.S.; Karpov, V.B.; Krasik, Ya.E.; Paul', E.A.

1991-01-01

Consideration is given to results of experimental studies of modes of operation of plasma current breaker and magnetic insulated diode, placed parallel in a circuit with inductive storage and microsecond generator, as well as parameters of high-power ion beam, generated in gas-filled diode. Magnetic field of mirror configuration, which enabled to locate the gas-filled diode dose to breaking region was used for decrease of electrodynamic plasma transfer. It is shown that time delay (of the order of ten and more) of power maximum in gas-filled diode with respect to power maximum in plasma breaker is observed when using passive plasma source on anode

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

International Nuclear Information System (INIS)

Winterfeldt, M.; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

2014-01-01

GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPP lat ) at high power. An experimental study of the factors limiting BPP lat is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPP lat is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPP lat , whose influence on total BPP lat remains small, provided the overall polarization purity is >95%

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

Science.gov (United States)

Winterfeldt, M.; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

2014-08-01

GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPPlat) at high power. An experimental study of the factors limiting BPPlat is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPPlat is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPPlat, whose influence on total BPPlat remains small, provided the overall polarization purity is >95%.

High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells

International Nuclear Information System (INIS)

Liao Yongping; Zhang Yu; Xing Junliang; Wei Sihang; Hao Hongyue; Wang Guowei; Xu Yingqiang; Niu Zhichuan

2015-01-01

2 μm AlGaAsSb/InGaSb type-I quantum-well high-power laser diodes (LDs) are grown using molecular beam epitaxy. Stripe-type waveguide single LD (single emitter) and array LD (four emitters) devices without facet coatings are fabricated. For the single LDs (single emitter) device, the maximum output power under continuous wave (CW) operation is 0.5 W at 10 °C with a threshold current density of 150 A/cm 2 and a slope efficiency of 0.17 W/A, the output powers under the pulse mode in the 5% duty cycles are much higher, up to 0.98 W. For the array LD devices, the maximum output powers are 1.02 W under the CW mode and 3.03 W under the pulse mode at room temperature. (paper)

Tunable high-power narrow-spectrum external-cavity diode laser at 675 nm as a pump source for UV generation

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Erbert, Gotz

2011-01-01

High-power narrow-spectrum diode laser systems based on tapered gain media in external cavity are demonstrated at 675 nm. Two 2-mm-long amplifiers are used, one with a 500-µm-long ridge-waveguide section (device A), the other with a 750-µm-long ridge-waveguide section (device B). The laser system...... of 1.0 W. The laser system B based on device B is tunable from 666 to 685 nm. As high as 1.05 W output power is obtained around 675.67 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M2 is 1.13 at an output power of 0.93 W. The laser...... system B is used as a pump source for the generation of 337.6 nm UV light by single-pass frequency doubling in a BIBO crystal. An output power of 109 µW UV light, corresponding to a conversion efficiency of 0.026%W-1 is attained....

Effects of thermal cycling on aluminum metallization of power diodes

DEFF Research Database (Denmark)

Brincker, Mads; Pedersen, Kristian Bonderup; Kristensen, Peter Kjær

2015-01-01

Reconstruction of aluminum metallization on top of power electronic chips is a well-known wear out phenomenon under power cycling conditions. However, the origins of reconstruction are still under discussion. In the current study, a method for carrying out passive thermal cycling of power diodes...

Spectral beam combining of diode lasers with high efficiency

DEFF Research Database (Denmark)

Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin

2012-01-01

Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation.......Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation....

Optical design and development of a fiber coupled high-power diode laser system for laser transmission welding of plastics

Science.gov (United States)

Rodríguez-Vidal, Eva; Quintana, Iban; Etxarri, Jon; Azkorbebeitia, Urko; Otaduy, Deitze; González, Francisco; Moreno, Fernando

2012-12-01

Laser transmission welding (LTW) of thermoplastics is a direct bonding technique already used in different industrial applications sectors such as automobiles, microfluidics, electronics, and biomedicine. LTW evolves localized heating at the interface of two pieces of plastic to be joined. One of the plastic pieces needs to be optically transparent to the laser radiation whereas the other part has to be absorbent, being that the radiation produced by high power diode lasers is a good alternative for this process. As consequence, a tailored laser system has been designed and developed to obtain high quality weld seams with weld widths between 0.7 and 1.4 mm. The developed laser system consists of two diode laser bars (50 W per bar) coupled into an optical fiber using a nonimaging solution: equalization of the beam parameter product (BPP) in the slow and fast axes by a pair of step-mirrors. The power scaling was carried out by means of a multiplexing polarization technique. The analysis of energy balance and beam quality was performed considering ray tracing simulation (ZEMAX) and experimental validation. The welding experiments were conducted on acrylonitrile/butadiene/styrene (ABS), a thermoplastic frequently used in automotive, electronics and aircraft applications, doped with two different concentrations of carbon nanotubes (0.01% and 0.05% CNTs). Quality of the weld seams on ABS was analyzed in terms of the process parameters (welding speed, laser power and clamping pressure) by visual and optical microscope inspections. Mechanical properties of weld seams were analyzed by mechanical shear tests. High quality weld seams were produced in ABS, revealing the potential of the laser developed in this work for a wide range of plastic welding applications.

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

Energy Technology Data Exchange (ETDEWEB)

Winterfeldt, M., E-mail: martin.winterfeldt@fbh-berlin.de; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2014-08-14

GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPP{sub lat}) at high power. An experimental study of the factors limiting BPP{sub lat} is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPP{sub lat} is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPP{sub lat}, whose influence on total BPP{sub lat} remains small, provided the overall polarization purity is >95%.

Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

Science.gov (United States)

Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

2015-11-16

We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

Overview of catastrophic failures of freewheeling diodes in power electronic circuits

DEFF Research Database (Denmark)

Wu, Rui; Blaabjerg, Frede; Wang, Huai

2013-01-01

Emerging applications (e.g. electric vehicles, renewable energy systems, more electric aircrafts, etc.) have brought more stringent reliability constrains into power electronic products because of safety requirements and maintenance cost issues. To improve the reliability of power electronics......, better understanding of failure modes and failure mechanisms of reliability–critical components in power electronic circuits are needed. Many efforts have been devoted to the reduction of IGBT failures, while the study on the failures of freewheeling diodes is less impressive. It is of importance...... to investigate the catastrophic failures of freewheeling diodes as they could induce the malfunction of other components and eventually the whole power electronic circuits. This paper presents an overview of those catastrophic failures and gives examples of the corresponding consequences to the circuits....

High power diode-pumped continuous wave and Q-switch operation of Tm,Ho:YVO4 laser

International Nuclear Information System (INIS)

Yao, B Q; Li, G; Meng, P B; Zhu, G L; Ju, Y L; Wang, Y Z

2010-01-01

High power diode-pumped continuous wave (CW) and Q-switch operation of Tm,Ho:YVO 4 laser is reported. Using two Tm,Ho:YVO 4 rods in a single cavity, up to 20.2 W of CW output lasing at 2054.7 nm was obtained under cryogenic temperature of 77 K with an optical to optical conversion efficiency of 32.9%. For Q-switch operation, up to 19.4 W of output was obtained under 15 kHz pulse repetition frequency (PRF) with a minimum pulse width of 24.2 ns. In addition, different pulse repetition frequencies of Q-switch operation with 10.0 kHz, 12.5 kHz and 15.0 kHz were investigated comparatively

Nonimaging concentrators for diode-pumped slab lasers

Science.gov (United States)

Lacovara, Philip; Gleckman, Philip L.; Holman, Robert L.; Winston, Roland

1991-10-01

Diode-pumped slab lasers require concentrators for high-average power operation. We detail the properties of diode lasers and slab lasers which set the concentration requirements and the concentrator design methodologies that are used, and describe some concentrator designs used in high-average power slab lasers at Lincoln Laboratory.

Effect of laser-diode light on growth of Lactuca sativa L

International Nuclear Information System (INIS)

Yamazaki, A.; Tsuchiya, H.; Miyajima, H.; Honma, T.; Kan, H.

2000-01-01

Development of an effective, high-power, low-cost, artificial light source for use in plant-growing facilities would be very beneficial for plant production. Recently, the laser-diode lamp was proposed as a new type of light source for plant production. The advantages of the laser-diode lamp over conventional light sources are its high electrical-to-optical power conversion efficiency, low thermal radiation, easy set-up for high power and pulse irradiation, small weight and small volume for mounting, and selectivity for proper wavelength. Because laser light itself differs from the light sources presently used in plant growing, we confirmed the possibility of growing plants under the laser-diode light using lettuces. Lettuce seedlings with 5-6 leaves were grown under a laser-diode lamp panel with 30 pieces of high-power and high-efficiency AlGaInP laser-diodes. The power of each laser-diode lamp was 500 mW, and the wavelength was 680 nm, which was efficient for photosynthesis. The lettuce plants were able to grow under the laser-diode light. However, plants were lighter and had thinner leaves than those grown under high-pressure sodium lamps. (author)

Development of laser diode-pumped high average power solid-state laser for the pumping of Ti:sapphire CPA system

Energy Technology Data Exchange (ETDEWEB)

Maruyama, Yoichiro; Tei, Kazuyoku; Kato, Masaaki; Niwa, Yoshito; Harayama, Sayaka; Oba, Masaki; Matoba, Tohru; Arisawa, Takashi; Takuma, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1998-03-01

Laser diode pumped all solid state, high repetition frequency (PRF) and high energy Nd:YAG laser using zigzag slab crystals has been developed for the pumping source of Ti:sapphire CPA system. The pumping laser installs two main amplifiers which compose ring type amplifier configuration. The maximum amplification gain of the amplifier system is 140 and the condition of saturated amplification is achieved with this high gain. The average power of fundamental laser radiation is 250 W at the PRF of 200 Hz and the pulse duration is around 20 ns. The average power of second harmonic is 105 W at the PRF of 170 Hz and the pulse duration is about 16 ns. The beam profile of the second harmonic is near top hat and will be suitable for the pumping of Ti:sapphire laser crystal. The wall plug efficiency of the laser is 2.0 %. (author)

Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

Science.gov (United States)

Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

2014-05-01

Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

System and method for high power diode based additive manufacturing

Science.gov (United States)

El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

2016-04-12

A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

System and method for high power diode based additive manufacturing

Energy Technology Data Exchange (ETDEWEB)

El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

2018-01-02

A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

Diode pumped solid state laser by two diodes

International Nuclear Information System (INIS)

Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

1995-01-01

A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

Wavelength stabilized multi-kW diode laser systems

Science.gov (United States)

Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

2015-03-01

We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup ¯}1{sup ¯}) GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Pourhashemi, A., E-mail: pourhashemi@engr.ucsb.edu; Farrell, R. M.; Cohen, D. A.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2015-03-16

We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup ¯}1{sup ¯}) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

High-power diode laser bars as pump sources for fiber lasers and amplifiers (Invited Paper)

Science.gov (United States)

Bonati, G.; Hennig, P.; Wolff, D.; Voelckel, H.; Gabler, T.; Krause, U.; T'nnermann, A.; Reich, M.; Limpert, J.; Werner, E.; Liem, A.

2005-04-01

Fiber lasers are pumped by fibercoupled, multimode single chip devices at 915nm. That"s what everybody assumes when asked for the type of fiber laser pumps and it was like this for many years. Coming up as an amplifier for telecom applications, the amount of pump power needed was in the range of several watts. Highest pump powers for a limited market entered the ten watts range. This is a range of power that can be covered by highly reliable multimode chips, that have to survive up to 25 years, e.g. in submarine applications. With fiber lasers entering the power range and the application fields of rod and thin disc lasers, the amount of pump power needed raised into the area of several hundred watts. In this area of pump power, usually bar based pumps are used. This is due to the much higher cost pressure of the industrial customers compared to telecom customers. We expect more then 70% of all industrial systems to be pumped by diode laser bars. Predictions that bar based pumps survive for just a thousand hours in cw-operation and fractions of this if pulsed are wrong. Bar based pumps have to perform on full power for 10.000h on Micro channel heat sinks and 20.000h on passive heatsinks in industrial applications, and they do. We will show a variety of data, "real" long time tests and statistics from the JENOPTIK Laserdiode as well as data of thousands of bars in the field, showing that bar based pumps are not just well suitable for industrial applications on high power levels, but even showing benefits compared to chip based pumps. And it"s reasonable, that the same objectives of cost effectiveness, power and lifetime apply as well to thin disc, rod and slab lasers as to fiber lasers. Due to the pumping of fiber lasers, examples will be shown, how to utilize bars for high brightness fiber coupling. In this area, the automation is on its way to reduce the costs on the fibercoupling, similar to what had been done in the single chip business. All these efforts are

Coaxial foilless diode

Energy Technology Data Exchange (ETDEWEB)

Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

2014-05-15

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

Next generation diode lasers with enhanced brightness

Science.gov (United States)

Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

2018-02-01

High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

Analysis of diodes used as precision power detectors above the square law region

DEFF Research Database (Denmark)

Guldbrandsen, Tom

1990-01-01

The deviation from square law found in diode power detectors at moderate power levels has been modeled for a general system consisting of a number of diode detectors connected to a common arbitrary linear passive network, containing an approximately sinusoidal source. This situation covers the case...... if an extra-set of measurements is made in situ. For precision measurements the maximum power level can be increased by about 10 dB. The dynamic range can thus be increased sufficiently to enable fast measurements to be made with an accuracy of 10-3 dB...

High Performance Single Nanowire Tunnel Diodes

DEFF Research Database (Denmark)

Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6....... is the tunnel (Esaki) diode, which provides a low-resistance connection between junctions. We demonstrate an InP-GaAs NW axial heterostructure with tunnel diode behavior. InP and GaAs can be readily n- and p-doped, respectively, and the heterointerface is expected to have an advantageous type II band alignment...

High-performance noncontact thermal diode via asymmetric nanostructures

Science.gov (United States)

Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan

2018-05-01

Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.

Compact green-diode-based lasers for biophotonic bioimaging

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Hansen, Anders Kragh; Petersen, Paul Michael

2014-01-01

Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.......Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers....

Study of the power supply topology with high stability for accelerator

International Nuclear Information System (INIS)

Wu Wei; Wang Yunfang; Wang Jiewei

2005-01-01

The requirements of the power supply for accelerator are analyzed. A few of topologies of the highly stabilized power supply are discussed. The types are listed: Auto-transformers-diode rectifier-transistor regulating current. Thyristor rectifier regulating voltage -transistor regulating current, Diode rectifier -DC-chopping. Thyristor rectifier regulating voltage -two-quadrant-chopping. The advantages and disadvantages of the topologies for power supply are discussed. The notice questions of the power supply designed for accelerator are analyzed. (authors)

Voltage-Sharing Converter to Supply Single-Phase Asymmetrical Four-Level Diode-Clamped Inverter With High Power Factor Loads

DEFF Research Database (Denmark)

Boora, Arash A.; Nami, Alireza; Zare, Firuz

2010-01-01

The output voltage quality of some of the single-phase multilevel inverters can be improved when their dc-link voltages are regulated asymmetrically. Symmetrical and asymmetrical multilevel diode-clamped inverters have the problem of dc-link capacitor voltage balancing, especially when power factor...... that the proposed combination of introduced multioutput dc–dc converter and single-phase ADCI is a good candidate for power conversion in residential photovoltaic (PV) utilization....

Online Vce measurement method for wear-out monitoring of high power IGBT modules

DEFF Research Database (Denmark)

Beczkowski, Szymon; Ghimire, Pramod; de Vega, Angel Ruiz

2013-01-01

A simple Vce online monitoring circuit is presented in this paper. It allows an accurate wear out prediction of IGBT modules, in high-power applications, during normal converter operation. Bipolar measurement allows monitoring of both IGBT and antiparallel diode. The circuit uses two serial...... offset due to diodes' forward voltage temperature dependency. Using four diodes one can monitor voltages on all power devices in a converter leg....

High-frequency high-voltage high-power DC-to-DC converters

Science.gov (United States)

Wilson, T. G.; Owen, H. A.; Wilson, P. M.

1982-09-01

A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

High-efficiency, 154  W CW, diode-pumped Raman fiber laser with brightness enhancement.

Science.gov (United States)

Glick, Yaakov; Fromzel, Viktor; Zhang, Jun; Ter-Gabrielyan, Nikolay; Dubinskii, Mark

2017-01-20

We demonstrate a high-power, high-efficiency Raman fiber laser pumped directly by laser diode modules at 978 nm. 154 W of CW power were obtained at a wavelength of 1023 nm with an optical to optical efficiency of 65%. A commercial graded-index (GRIN) core fiber acts as the Raman fiber in a power oscillator configuration, which includes spectral selection to prevent generation of the second Stokes. In addition, brightness enhancement of the pump beam by a factor of 8.4 is attained due to the Raman gain distribution profile in the GRIN fiber. To the best of our knowledge this is the highest power and highest efficiency Raman fiber laser demonstrated in any configuration allowing brightness enhancement (i.e., in either cladding-pumped configuration or with GRIN fibers, excluding step-index core pumped), regardless of pumping scheme (i.e., either diode pumped or fiber laser pumped).

Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

International Nuclear Information System (INIS)

Turner, G.W.; Choi, H.K.; Calawa, D.R.

1994-01-01

Recent advances in the performance of GaInAsSb/AlGaAsSb quantum-well diode lasers have been directly related to improvements in the quality of the molecular-beam epitaxy (MBE)-grown epitaxial layers. These improvements have been based on careful measurement and control of lattice matching and intentional strain, changes in shutter sequencing at interfaces, and a generally better understanding of the growth of Sb-based epitaxial materials. By using this improved MBE-grown material, significantly enhanced performance has been obtained for midinfrared lasers. These lasers, which are capable of ∼2-μm emission at room temperature, presently exhibit threshold current densities of 143 A/cm 2 , continuous wave powers of 1.3 W, and diffraction-limited powers of 120 mW. Such high-performance midinfrared diode lasers are of interest for a wide variety of applications, including eye-safe laser radar, remote sensing of atmospheric contaminants and wind turbulence, laser surgery, and pumping of solid-state laser media. 12 refs., 3 figs

Theoretical and experimental investigations of the limits to the maximum output power of laser diodes

International Nuclear Information System (INIS)

Wenzel, H; Crump, P; Pietrzak, A; Wang, X; Erbert, G; Traenkle, G

2010-01-01

The factors that limit both the continuous wave (CW) and the pulsed output power of broad-area laser diodes driven at very high currents are investigated theoretically and experimentally. The decrease in the gain due to self-heating under CW operation and spectral holeburning under pulsed operation, as well as heterobarrier carrier leakage and longitudinal spatial holeburning, are the dominant mechanisms limiting the maximum achievable output power.

High-power planar dielectric waveguide lasers

International Nuclear Information System (INIS)

Shepherd, D.P.; Hettrick, S.J.; Li, C.; Mackenzie, J.I.; Beach, R.J.; Mitchell, S.C.; Meissner, H.E.

2001-01-01

The advantages and potential hazards of using a planar waveguide as the host in a high-power diode-pumped laser system are described. The techniques discussed include the use of proximity-coupled diodes, double-clad waveguides, unstable resonators, tapers, and integrated passive Q switches. Laser devices are described based on Yb 3+ -, Nd 3+ -, and Tm 3+ -doped YAG, and monolithic and highly compact waveguide lasers with outputs greater than 10 W are demonstrated. The prospects for scaling to the 100 W level and for further integration of devices for added functionality in a monolithic laser system are discussed. (author)

Coaxial foilless diode

Directory of Open Access Journals (Sweden)

Long Kong

2014-05-01

Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

5.5nm wavelength-tunable high-power MOPA diode laser system at 971 nm

Science.gov (United States)

Tawfieq, Mahmoud; Müller, André; Fricke, Jörg; Della Casa, Pietro; Ressel, Peter; Ginolas, Arnim; Feise, David; Sumpf, Bernd; Tränkle, Günther

2018-02-01

In this work, a widely tunable hybrid master oscillator power amplifier (MOPA) diode laser with 6.2 W of output power at 971.8 nm will be presented. The MO is a DBR laser, with a micro heater embedded on top of the DBR grating for wavelength tunability. The emitted light of the MO is collimated and coupled into a tapered amplifier using micro cylindrical lenses, all constructed on a compact 25 mm × 25 mm conduction cooled laser package. The MOPA system emits light with a measured spectral width smaller than 17 pm, limited by the spectrometer, and with a beam propagation factor of M2 1/e2 = 1.3 in the slow axis. The emission is thus nearly diffraction limited with 79% of the total power within the central lobe (4.9 W diffraction limited). The electrically controlled micro-heater provides up to 5.5 nm of wavelength tunability, up to a wavelength of 977.3 nm, while maintaining an output power variation of only +/- 0.16 % for the entire tuning range.

An analysis of transient thermal properties for high power GaN-based laser diodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae Min; Kim, Seungtaek; Kang, Sung Bok; Kim, Young Jin; Jeong, Hoon; Lee, Kyeongkyun; Kim, Jongseok [Korea Institute of Industrial Technology, 35-3 Hongcheon-Ri, Ipjang-Myeon, Cheonan, Chungnam 331-825 (Korea); Lee, Sangdon; Suh, Dongsik [QSI Co., Ltd., 315-9 Cheonheung-Ri, Sungger-Eup, Cheonan, Chungnam 330-836 (Korea); Yi, Jeong Hoon; Choi, Yoonho; Jung, Seok Gu; Noh, Minsoo [LG Electronics Advanced Research Institute, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724 (Korea)

2010-07-15

Thermal properties of 405 nm GaN-based laser diodes were investigated by employing a transient heating response method based on the temperature dependence of diode forward voltage. Thermal resistances of materials consisting of packaged laser diodes were differentiated in transient thermal response curves at a current below threshold current. With a current above threshold current, no significant change in thermal resistances and difference between junction-up and junction-down laser diodes was observed at pulses shorter than 3 sec. From an analysis with long current injections, thermal resistance of a packaged laser diode with a junction-up bonding was {proportional_to}45 C/W which was higher than that of a junction-down bonded laser diode by {proportional_to}10 C/W. Further analyses based on parameters obtained from voltage recovery curves indicated that the time constant for cooling is directly related to the thermal resistance and thermal capacitance of a laser diode package. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

Science.gov (United States)

Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

2003-06-01

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

Extraction of diode parameters of silicon solar cells under high illumination conditions

International Nuclear Information System (INIS)

Khan, Firoz; Baek, Seong-Ho; Park, Yiseul; Kim, Jae Hyun

2013-01-01

Graphical abstract: We have developed an analytical method to determine the diode parameters of concentrator solar cells under high illumination conditions. The determined values of diode parameters have been used to compute the theoretical values of performance parameters. The computed values of the open circuit voltage, curve factor, and efficiency obtained using diode parameters determined with this method showed good agreement (<2% discrepancy) with their experimental values in the temperature range 298–323 K. Highlights: • An analytical method to extract the diode parameters of concentrated Si solar cells. • This method uses single I–V curve under high illumination conditions. • The theoretical values of performance parameters have been computed. • Theoretical values of parameters matched within 2% discrepancy limit. • This method gives best results among the methods used in this work. - Abstract: An analytical method has been developed to extract all four diode parameters, namely the shunt resistance, series resistance, diode ideality factor, and reverse saturation current density, using a single J–V curve, based on one exponential model of silicon solar cells under high illumination conditions. The slope of the J–V curve (dV/dJ) at a short circuit condition is used to determine the value of the shunt resistance. The slope of the J–V curve at an open circuit condition together with the short circuit current density, open circuit voltage, current density, and voltage at maximum power point have been used to determine the values of the series resistance, diode ideality factor, and reverse saturation current density. The determined values of the diode parameters have been used to compute the theoretical values of the open circuit voltage, curve factor, and efficiency of the solar cell. The theoretical J–V curves matched well with the corresponding experimental curves. This method is applied to determine the diode parameters of concentrator

Application of a High-Power Reversible Converter in a Hybrid Traction Power Supply System

Directory of Open Access Journals (Sweden)

Gang Zhang

2017-03-01

Full Text Available A high-power reversible converter can achieve a variety of functions, such as recovering regenerative braking energy, expanding traction power capacity, and improving an alternating current (AC grid power factor. A new hybrid traction power supply scheme, which consists of a high-power reversible converter and two 12-pulse diode rectifiers, is proposed. A droop control method based on load current feed-forward is adopted to realize the load distribution between the reversible converter and the existing 12-pulse diode rectifiers. The direct current (DC short-circuit characteristics of the reversible converter is studied, then the relationship between the peak fault current and the circuit parameters is obtained from theoretical calculations and validated by computer simulation. The first two sets of 2 MW reversible converters have been successfully applied in Beijing Metro Line 10, the proposed hybrid application scheme and coordinated control strategy are verified, and 11.15% of average energy-savings is reached.

Automated alignment of optical components for high-power diode lasers

Science.gov (United States)

Brecher, C.; Pyschny, N.; Haag, S.; Guerrero Lule, V.

2012-03-01

Despite major progress in developing brilliant laser sources a huge potential for cost reductions can be found in simpler setups and automated assembly processes, especially for large volume applications. In this presentation, a concept for flexible automation in optics assembly is presented which is based on standard micro assembly systems with relatively large workspace and modular micromanipulators to enhance the system with additional degrees of freedom and a very high motion resolution. The core component is a compact flexure-based micromanipulator especially designed for the alignment of micro optical components which will be described in detail. The manipulator has been applied in different scenarios to develop and investigate automated alignment processes. This paper focuses on the automated alignment of fast axis collimation (FAC) lenses which is a crucial step during the production of diode lasers. The handling and positioning system, the measuring arrangement for process feedback during active alignment as well as the alignment strategy will be described. The fine alignment of the FAC lens is performed with the micromanipulator under concurrent analysis of the far and the near field intensity distribution. An optimization of the image processing chains for the alignment of a FAC in front of a diode bar led to cycle times of less than 30 seconds. An outlook on other applications and future work regarding the development of automated assembly processes as well as new ideas for flexible assembly systems with desktop robots will close the talk.

Blue laser diode (450 nm) systems for welding copper

Science.gov (United States)

Silva Sa, M.; Finuf, M.; Fritz, R.; Tucker, J.; Pelaprat, J.-M.; Zediker, M. S.

2018-02-01

This paper will discuss the development of high power blue laser systems for industrial applications. The key development enabling high power blue laser systems is the emergence of high power, high brightness laser diodes at 450 nm. These devices have a high individual brightness rivaling their IR counterparts and they have the potential to exceed their performance and price barriers. They also have a very high To resulting in a 0.04 nm/°C wavelength shift. They have a very stable lateral far-field profile which can be combined with other diodes to achieve a superior brightness. This paper will report on the characteristics of the blue laser diodes, their integration into a modular laser system suitable for scaling the output power to the 1 kW level and beyond. Test results will be presented for welding of copper with power levels ranging from 150 Watts to 600 Watts

Progress in semiconductor laser diodes: SPIE volume 723

International Nuclear Information System (INIS)

Eichen, E.

1987-01-01

This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

Science.gov (United States)

Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

2012-09-01

We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

Novel power MOSFET-based expander for high frequency ultrasound systems.

Science.gov (United States)

Choi, Hojong; Shung, K Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4% and 240% compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. Copyright © 2013 Elsevier B.V. All rights reserved.

Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

DEFF Research Database (Denmark)

Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

2015-01-01

It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with Ga...

High-energy, high-repetition-rate picosecond pulses from a quasi-CW diode-pumped Nd:YAG system.

Science.gov (United States)

Noom, Daniel W E; Witte, Stefan; Morgenweg, Jonas; Altmann, Robert K; Eikema, Kjeld S E

2013-08-15

We report on a high-power quasi-CW pumped Nd:YAG laser system, producing 130 mJ, 64 ps pulses at 1064 nm wavelength with a repetition rate of 300 Hz. Pulses from a Nd:YVO(4) oscillator are first amplified by a regenerative amplifier to the millijoule level and then further amplified in quasi-CW diode-pumped Nd:YAG modules. Pulsed diode pumping enables a high gain at repetition rates of several hundred hertz, while keeping thermal effects manageable. Birefringence compensation and multiple thermal-lensing-compensated relay-imaging stages are used to maintain a top-hat beam profile. After frequency doubling, 75 mJ pulses are obtained at 532 nm. The intensity stability is better than 1.1%, which makes this laser an attractive pump source for a high-repetition-rate optical parametric amplification system.

Graphene geometric diodes for terahertz rectennas

International Nuclear Information System (INIS)

Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

2013-01-01

We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

Overview on new diode lasers for defense applications

Science.gov (United States)

Neukum, Joerg

2012-11-01

Diode lasers have a broad wavelength range, from the visible to beyond 2.2μm. This allows for various applications in the defense sector, ranging from classic pumping of DPSSL in range finders or target designators, up to pumping directed energy weapons in the 50+ kW range. Also direct diode applications for illumination above 1.55μm, or direct IR countermeasures are of interest. Here an overview is given on some new wavelengths and applications which are recently under discussion. In this overview the following aspects are reviewed: • High Power CW pumps at 808 / 880 / 940nm • Pumps for DPAL - Diode Pumped Alkali Lasers • High Power Diode Lasers in the range market.

Preliminary Demonstration of Power Beaming With Non-Coherent Laser Diode Arrays

National Research Council Canada - National Science Library

Kare, Jordin

1999-01-01

A preliminary demonstration of free-space electric power transmission has been conducted using non-coherent laser diode arrays as the transmitter and standard silicon photovoltaic cell arrays as the receiver...

Quasi-CW Laser Diode Bar Life Tests

Science.gov (United States)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

Low-confinement high-power semiconductor lasers

NARCIS (Netherlands)

Buda, M.

1999-01-01

This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

Measurement of soft X-ray power from high-power Z-pinch plasma

International Nuclear Information System (INIS)

Wang Wensheng; Qiu Aici; Sun Fengrong; Luo Jianhui; Zhou Haisheng; He Duohui

2003-01-01

A Ni-film bolometer driven by the pulsed constant-voltage supply was developed for measuring soft X-ray energy under 1 keV generated from the Qiang-Guang-I, while the measuring system of the soft X-ray power was established with an X-ray diode detector. Results of the soft X-ray energy and power measurements were obtained at the experiment of Kr gas-puff high-power Z-pinch plasma

Design of two-terminal PNPN diode for high-density and high-speed memory applications

International Nuclear Information System (INIS)

Tong Xiaodong; Wu Hao; Liang Qingqing; Zhong Huicai; Zhu Huilong; Zhao Chao; Ye Tianchun

2014-01-01

A vertical two-terminal silicon PNPN diode is presented for use in a high-density memory cell. The device design for high-speed operations was studied with experiments and calibrated simulations, which proves that the proposed memory cell can be operated at nanosecond range. The static and dynamic power dissipations were also studied, which indicated the availability of the proposed memory cell for VLSI applications. Moreover, the memory cell is compatible with CMOS process, has little impact from process variation, and has good reliability. (semiconductor devices)

Microstructure, microhardness and corrosion resistance of remelted TiG2 and Ti6Al4V by a high power diode laser

International Nuclear Information System (INIS)

Amaya-Vazquez, M.R.; Sánchez-Amaya, J.M.; Boukha, Z.; Botana, F.J.

2012-01-01

Highlights: ► Laser remelting of TiG2 and Ti6Al4V is performed with argon shielded diode laser. ► Microstructure, microhardness and corrosion of remelted samples are deeply analysed. ► Microstructural changes of laser remelted TiG2 lead to microhardness increase. ► Remelted Ti6Al4V presents microhardness increase and corrosion improvement. ► Martensite depth in remelted Ti6Al4V is linearly proportional to laser fluence. - Abstract: The high strength, low density and superior corrosion resistance allow titanium alloys to be widely employed in different industrial applications. The properties of these alloys can be modulated by different heat treatments, including laser processing. In the present paper, laser remelting treatments, performed with a high power diode laser, were applied to samples of two titanium alloys (TiG2 and Ti6Al4V). The influence of the applied laser fluence on microstructure, microhardness and corrosion resistance is investigated. Results show that laser remelting treatments with appropriate fluences provoke microstructural changes leading to microhardness increase and corrosion resistance improvement.

Fast-opening vacuum switches for high-power inductive energy storage

International Nuclear Information System (INIS)

Cooperstein, G.

1988-01-01

The subject of fast-opening vacuum switches for high-power inductive energy storage is emerging as an exciting new area of plasma science research. This opening switch technology, which generally involves the use of plasmas as the switching medium, is key to the development of inductive energy storage techniques for pulsed power which have a number of advantages over conventional capacitive techniques with regard to cost and size. This paper reviews the state of the art in this area with emphasis on applications to inductive storage pulsed power generators. Discussion focuses on fast-opening vacuum switches capable of operating at high power (≥10 12 W). These include plasma erosion opening switches, ion beam opening switches, plasma filled diodes, reflex diodes, plasma flow switches, and other novel vacuum opening switches

3.1 W narrowband blue external cavity diode laser

Science.gov (United States)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

Geometry modeling of single track cladding deposited by high power diode laser with rectangular beam spot

Science.gov (United States)

Liu, Huaming; Qin, Xunpeng; Huang, Song; Hu, Zeqi; Ni, Mao

2018-01-01

This paper presents an investigation on the relationship between the process parameters and geometrical characteristics of the sectional profile for the single track cladding (STC) deposited by High Power Diode Laser (HPDL) with rectangle beam spot (RBS). To obtain the geometry parameters, namely cladding width Wc and height Hc of the sectional profile, a full factorial design (FFD) of experiment was used to conduct the experiments with a total of 27. The pre-placed powder technique has been employed during laser cladding. The influence of the process parameters including laser power, powder thickness and scanning speed on the Wc and Hc was analyzed in detail. A nonlinear fitting model was used to fit the relationship between the process parameters and geometry parameters. And a circular arc was adopted to describe the geometry profile of the cross-section of STC. The above models were confirmed by all the experiments. The results indicated that the geometrical characteristics of the sectional profile of STC can be described as the circular arc, and the other geometry parameters of the sectional profile can be calculated only using Wc and Hc. Meanwhile, the Wc and Hc can be predicted through the process parameters.

Study on the near-field non-linearity (SMILE) of high power diode laser arrays

Science.gov (United States)

Zhang, Hongyou; Jia, Yangtao; Li, Changxuan; Zah, Chung-en; Liu, Xingsheng

2018-02-01

High power laser diodes have been found a wide range of industrial, space, medical applications, characterized by high conversion efficiency, small size, light weight and a long lifetime. However, due to thermal induced stress, each emitter in a semiconductor laser bar or array is displaced along p-n junction, resulting of each emitter is not in a line, called Near-field Non-linearity. Near-field Non-linearity along laser bar (also known as "SMILE") determines the outcome of optical coupling and beam shaping [1]. The SMILE of a laser array is the main obstacle to obtain good optical coupling efficiency and beam shaping from a laser array. Larger SMILE value causes a larger divergence angle and a wider line after collimation and focusing, respectively. In this letter, we simulate two different package structures based on MCC (Micro Channel Cooler) with Indium and AuSn solders, including the distribution of normal stress and the SMILE value. According to the theoretical results, we found the distribution of normal stress on laser bar shows the largest in the middle and drops rapidly near both ends. At last, we did another experiment to prove that the SMILE value of a laser bar was mainly affected by the die bonding process, rather than the operating condition.

A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2018-01-01

. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy

International Nuclear Information System (INIS)

Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

2006-01-01

In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350 nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN/AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN/AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800x800 μm 2 ) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340 nm, the measured differential on-series resistance is 3 Ω with electroluminescence spectrum full width at half maximum of 18 nm. The output power under dc bias saturates at 0.5 mW, while under pulsed operation it saturates at approximately 700 mA to a value of 3 mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350 nm were investigated under dc operation and the output power saturates at 4.5 mW under 200 mA drive current

Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016

Science.gov (United States)

2016-12-01

ARL-TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky...TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk...Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016 5a. CONTRACT NUMBER 5b. GRANT NUMBER

Direct diode lasers and their advantages for materials processing and other applications

Science.gov (United States)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but

Optoacoustic response from graphene-based solutions embedded in optical phantoms by using 905-nm high-power diode-laser assemblies

Science.gov (United States)

Leggio, Luca; Gallego, Daniel C.; Gawali, Sandeep Babu; Dadrasnia, Ehsan; Sánchez, Miguel; Rodríguez, Sergio; González, Marta; Carpintero, Guillermo; Osiński, Marek; Lamela, Horacio

2016-03-01

During the last two decades, optoacoustic imaging has been developed as a novel biomedical imaging technique based on the generation of ultrasound waves by means of laser light. In this work, we investigate the optoacoustic response from graphene-based solutions by using a compact and cost-effective system based on an assembly of several 905-nm pulsed high-power diode lasers coupled to a bundle of 200-μm diameter- core optical fibers. The coupled light is conveyed into a lens system and focused on an absorber consisting of graphene-based nanomaterials (graphene oxide, reduced graphene oxide, and reduced graphene-oxide/gold-nanoparticle hybrid, respectively) diluted in ethanol and hosted in slightly scattering optical phantoms. The high absorption of these graphene-based solutions suggests their potential future use in optoacoustic applications as contrast agents.

Analytical study on discrete model of virtual cathode in a high-current diode

International Nuclear Information System (INIS)

Privezentsev, A.P.

1988-01-01

Interest in investigation of virtual cathode dynamics related to the development of high-current accelerator equipment is caused by the possibility of its application for ion collective acceleration in direct high-current electron beams and generation of power electromagnetic radiation. The Hamiltonian form of a plane sheet model for a high-current flux in a plane diode is investigated. Variables used permit to carry out the investigation of dynamics of the virtual cathode flux by the method of coordinate point transformations in a phase space. The necessity of numerical integration of sheet motion equations is dropped out in this case. Analytical solution of the suggested iterative circuit for total flux passage is presented as an example. The solution obtained is equivalent to the known results of the plane diode theory, obtained in the hydrodynamic approximation

Research of long pulse high current diode radial insulation

International Nuclear Information System (INIS)

Tan Jie; Chang Anbi; Hu Kesong; Liu Qingxiang; Ma Qiaosheng; Liu Zhong

2002-01-01

A radial insulation structure which is used in long pulse high current diode is introduced. The theory of vacuum flashover and the idea of design are briefly introduced. In the research, cone-shaped insulator was used. The geometry structure parameters were optimized by simulating the static electrical field distribution. Experiment was done on a pulse power source with 200 ns pulse width. The maximum voltage 750 kV was obtained, and the average stand-off electrical field of insulator is about 50 kV/cm

Evaluation of temperature variation in pulp chamber after high power diode laser irradiation (λ=830 nm) on dental enamel: 'in vitro' study

International Nuclear Information System (INIS)

Macri, Rodrigo Teixeira

2001-01-01

The aim of this study was to observe the variation of temperature in the pulp chamber caused by irradiation of a commercial diode laser operating in continuous wave with wavelength 830 nm over the dental enamel. In the first part of this study, two types of tooth models were tested: 3,5 mm slice and whole tooth. In the second part, we irradiated the buccal si de of the enamel in 2 primary lower incisors from cattle with Opus 10 diode laser for 10 s with power levels of 1 W and 2 W, always using an absorber. Two thermocouples were used. The first one was inserted in the dentin wall closest to the irradiation site, while the second was inserted in the middle of the pulp chamber. It was observed that the thermocouples registered different temperatures. Always, the dentin thermocouple registered higher temperatures. Considering the dentin records, the irradiation of 1 W for 10 s can be safe for the pulp. Further studies must be developed related to the correct positioning of the thermocouples inside the pulp chamber. This was a first step of using diode laser in enamel, and in this study, we concluded that the Opus 10 diode laser shown to be safe for this use, with 1 W power for 10 S. (author)

Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

Energy Technology Data Exchange (ETDEWEB)

Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

2000-04-01

Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

A battery-powered high-current power supply for superconductors

CERN Document Server

Wake, M; Suda, K

2002-01-01

Since superconductors do not require voltages, a high-current power supply could run with low power if the voltage is sufficiently reduced. Even a battery-powered power supply could give as much as 2,000A for a superconductor. To demonstrate this hypothesis, a battery-powered 2,000A power supply was constructed. It uses an IGBT chopper and Schottky diode together with a specially arranged transformer to produce a high current with low voltage. Testing of 2,000A operation was performed for about 1.5 hr using 10 car batteries. Charging time for this operation was 8 hr. Ramping control was smooth and caused no trouble. Although the IGBT frequency ripple of 16.6 kHz was easily removed using a passive filter, spike noise remained in the output voltage. This ripple did not cause any trouble in operating a pancake-type inductive superconducting load. (author)

High-temperature current conduction through three kinds of Schottky diodes

International Nuclear Information System (INIS)

Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

2009-01-01

Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Solid state pump lasers with high power and high repetition rate

International Nuclear Information System (INIS)

Oba, Masaki; Kato, Masaaki; Arisawa, Takashi

1995-01-01

We built a laser diode pumped solid state green laser (LDPSSGL) rated at high repetition rate. Two laser heads are placed in one cavity with a rotator in between to design to avoid thermal lensing and thermal birefringence effect. Although average green laser power higher than 10 W was obtained at 1 kHz repetition rate with pulse width of 20-30 nsec, the beam quality was so much deteriorated that energy efficiency was as low as 2 %. Learning from this experience that high power oscillator causes a lot of thermal distortion not only in the laser rod but also in the Q-switch device, we proceeded to built a oscillator/amplifier system. A low power oscillator has a slab type crystal in the cavity. As a result spatial distribution of laser power was extremely improved. As we expect that the high repetition rate solid state laser should be CW operated Q-switch type laser from the view point of lifetime of diode lasers, a conventional arc lamp pumped CW Q-switch green YAG laser of which the repetition rate is changeable from 1 kHz to 5 kHz and the pulse width is 250-570 nsec was also tested to obtain pumping characteristics of a dye laser as a function of power, pulse width etc., and dye laser pulse width of 100-130 nsec were obtained. (author)

Thermal investigation on high power dfb broad area lasers at 975 nm, with 60% efficiency

Science.gov (United States)

Mostallino, R.; Garcia, M.; Deshayes, Y.; Larrue, A.; Robert, Y.; Vinet, E.; Bechou, L.; Lecomte, M.; Parillaud, O.; Krakowski, M.

2016-03-01

The demand of high power diode lasers in the range of 910-980nm is regularly growing. This kind of device for many applications, such as fiber laser pumping [1], material processing [1], solid-state laser pumping [1], defense and medical/dental. The key role of this device lies in the efficiency (𝜂𝐸) of converting input electrical power into output optical power. The high value of 𝜂𝐸 allows high power level and reduces the need in heat dissipation. The requirement of wavelength stabilization with temperature is more obvious in the case of multimode 975nm diode lasers used for pumping Yb, Er and Yb/Er co-doped solid-state lasers, due to the narrow absorption line close to this wavelength. Such spectral width property (etching and re-growth process techniques, is achievable in high power diode lasers using optical feedback. This paper reports on the development of the diode laser structure and the process techniques required to write the gratings taking into account of the thermal dissipation and optical performances. Performances are particularly determined in terms of experimental electro-optical characterizations. One of the main objectives is to determine the thermal resistance of the complete assembly to ensure the mastering of the diode laser temperature for operating condition. The classical approach to determine junction temperature is based on the infrared thermal camera, the spectral measurement and the pulse electrical method. In our case, we base our measurement on the spectral measurement but this approach is not well adapted to the high power diodes laser studied. We develop a new measurement based on the pulse electrical method and using the T3STERequipment. This method is well known for electronic devices and LEDs but is weakly developed for the high power diodes laser. This crucial measurement compared to spectral one is critical for understand the thermal management of diode laser device and improve the structure

Thermal characterizations analysis of high-power ThinGaN cool-white light-emitting diodes

Science.gov (United States)

Raypah, Muna E.; Devarajan, Mutharasu; Ahmed, Anas A.; Sulaiman, Fauziah

2018-03-01

Analysis of thermal properties plays an important role in the thermal management of high-power (HP) lighting-emitting diodes (LEDs). Thermal resistance, thermal capacitance, and thermal time constant are essential parameters for the optimal design of the LED device and system, particularly for dynamic performance study. In this paper, thermal characterization and thermal time constant of ThinGaN HP LEDs are investigated. Three HP cool-white ThinGaN LEDs from different manufacturers are used in this study. A forward-voltage method using thermal transient tester (T3Ster) system is employed to determine the LEDs' thermal parameters at various operating conditions. The junction temperature transient response is described by a multi-exponential function model to extract thermal time constants. The transient response curve is divided into three layers and expressed by three exponential functions. Each layer is associated with a particular thermal time constant, thermal resistance, and thermal capacitance. It is found that the thermal time constant of LED package is on the order of 22 to 100 ms. Comparison between the experimental results is carried out to show the design effects on thermal performance of the LED package.

Custom ceramic microchannel-cooled array for high-power fiber-coupled application

Science.gov (United States)

Junghans, Jeremy; Feeler, Ryan; Stephens, Ed

2018-03-01

A low-SWaP (Size, Weight and Power) diode array has been developed for a high-power fiber-coupled application. High efficiency ( 65%) diodes enable high optical powers while minimizing thermal losses. A large amount of waste heat is still generated and must be extracted. Custom ceramic microchannel-coolers (MCCs) are used to dissipate the waste heat. The custom ceramic MCC was designed to accommodate long cavity length diodes and micro-lenses. The coolers provide similar thermal performance as copper MCCs however they are not susceptible to erosion and can be cooled with standard filtered water. The custom ceramic micro-channel cooled array was designed to be a form/fit replacement for an existing copperbased solution. Each array consisted of three-vertically stacked MCCs with 4 mm CL, 976 nm diodes and beamshaping micro-optics. The erosion and corrosion resistance of ceramic array is intended to mitigate the risk of copperbased MCC corrosion failures. Elimination of the water delivery requirements (pH, resistivity and dissolved oxygen control) further reduces the system SWaP while maintaining reliability. The arrays were fabricated and fully characterized. This work discusses the advantages of the ceramic MCC technology and describes the design parameters that were tailored for the fiber-coupled application. Additional configuration options (form/fit, micro-lensing, alternate coolants, etc.) and on-going design improvements are also discussed.

High performance Schottky diodes based on indium-gallium-zinc-oxide

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China)

2016-07-15

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.

Venous Lake of the Lips Treated Using Photocoagulation with High-Intensity Diode Laser

Science.gov (United States)

Galletta, Vivian C.; de Paula Eduardo, Carlos; Migliari, Dante A.

2010-01-01

Abstract Objective: To evaluate the effectiveness of photocoagulation with high-intensity diode laser in the treatment of venous lake (VL) lesions. Background Data: VL is a common vascular lesion characterized by elevated, usually dome-shaped papules, ranging in color from dark blue to dark purple, seen more frequently in elderly patients. They often occur as single lesions on the ears, face, lips, or neck. Once formed, lesions persist throughout life. Although these lesions are usually asymptomatic, they can bleed if injured. Methods: Seventeen patients (7 men and 10 women) with VL on the lip were treated using a noncontact diode laser (wavelength 808 nm, power output 2–3 W in continuous wave). Results: After only one irradiation exposure, all lesions were successfully treated. Healing was completed in approximately 2 to 3 weeks, and none of the patients experienced complications. Postoperative discomfort and scarring were not present or were minimal. Conclusion: Photocoagulation with high-intensity diode laser is an effective, bloodless procedure for the treatment of VL. PMID:19811083

Development and fabrication of a high current, fast recovery power diode

Science.gov (United States)

Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.

1983-01-01

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Effective of diode laser on teeth enamel in the teeth whitening treatment

Science.gov (United States)

Klunboot, U.; Arayathanitkul, K.; Chitaree, R.; Emarat, N.

2011-12-01

This research purpose is to investigate the changing of teeth color and to study the surface of teeth after treatment by laser diode at different power densities for tooth whitening treatment. In the experiment, human-extracted teeth samples were divided into 7 groups of 6 teeth each. After that laser diode was irradiated to teeth, which were coated by 38% concentration of hydrogen peroxide, during for 20, 30 and 60 seconds at power densities of 10.9 and 52.1 W/cm2. The results of teeth color change were described by the CIEL*a*b* systems and the damage of teeth surface were investigated by scanning electron microscopy (SEM). The results showed that the power density of the laser diode could affect the whiteness of teeth. The high power density caused more luminous teeth than the low power density did, but on the other hand the high power density also caused damage to the teeth surface. Therefore, the laser diode at the low power densities has high efficiency for tooth whitening treatment and it has a potential for other clinical applications.

Microstructure, microhardness and corrosion resistance of remelted TiG2 and Ti6Al4V by a high power diode laser

Energy Technology Data Exchange (ETDEWEB)

Amaya-Vazquez, M.R. [Laboratorio de Corrosion y Proteccion, Universidad de Cadiz, Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Avda. Republica Saharaui s/n, 11510 Puerto Real, Cadiz (Spain); Sanchez-Amaya, J.M., E-mail: josemaria.sanchez@uca.es [Titania, Ensayos y Proyectos Industriales S.L., Ctra Sanlucar A-2001 Km 7,5, Parque Tecnologico TecnoBahia-Edif. RETSE Nave 4, 11500 El Puerto de Santa Maria, Cadiz (Spain); Departamento de Fisica Aplicada, CASEM, Avda. Republica Saharaui s/n, 11510-Puerto Real, Cadiz (Spain); Boukha, Z.; Botana, F.J. [Laboratorio de Corrosion y Proteccion, Universidad de Cadiz, Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Avda. Republica Saharaui s/n, 11510 Puerto Real, Cadiz (Spain)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Laser remelting of TiG2 and Ti6Al4V is performed with argon shielded diode laser. Black-Right-Pointing-Pointer Microstructure, microhardness and corrosion of remelted samples are deeply analysed. Black-Right-Pointing-Pointer Microstructural changes of laser remelted TiG2 lead to microhardness increase. Black-Right-Pointing-Pointer Remelted Ti6Al4V presents microhardness increase and corrosion improvement. Black-Right-Pointing-Pointer Martensite depth in remelted Ti6Al4V is linearly proportional to laser fluence. - Abstract: The high strength, low density and superior corrosion resistance allow titanium alloys to be widely employed in different industrial applications. The properties of these alloys can be modulated by different heat treatments, including laser processing. In the present paper, laser remelting treatments, performed with a high power diode laser, were applied to samples of two titanium alloys (TiG2 and Ti6Al4V). The influence of the applied laser fluence on microstructure, microhardness and corrosion resistance is investigated. Results show that laser remelting treatments with appropriate fluences provoke microstructural changes leading to microhardness increase and corrosion resistance improvement.

Blue 450nm high power semiconductor continuous wave laser bars exceeding rollover output power of 80W

Science.gov (United States)

König, H.; Lell, A.; Stojetz, B.; Ali, M.; Eichler, C.; Peter, M.; Löffler, A.; Strauss, U.; Baumann, M.; Balck, A.; Malchus, J.; Krause, V.

2018-02-01

Industrial material processing like cutting or welding of metals is rather energy efficient using direct diode or diode pumped solid state lasers. However, many applications cannot be addressed by established infrared laser technology due to fundamental material properties of the workpiece: For example materials like copper or gold have too low absorption in the near infrared wavelength range to be processed efficiently by use of existing high power laser systems. The huge interest to enable high power kW systems with more suitable wavelengths in the blue spectral range triggered the German funded research project 'BLAULAS': Therein the feasibility and capability of CW operating high power laser bars based on the GaN material system was investigated by Osram and Laserline. High performance bars were enabled by defeating fundamental challenges like material quality as well as the chip processes, both of which differ significantly from well-known IR laser bars. The research samples were assembled on actively cooled heat sinks with hard solder technology. For the first time an output power of 98W per bar at 60A drive current was achieved. Conversion efficiency as high as 46% at 50W output power was demonstrated.

Measuring Plasma Formation Field Strength and Current Loss in Pulsed Power Diodes

Energy Technology Data Exchange (ETDEWEB)

Johnston, Mark D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Patel, Sonal G. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Falcon, Ross Edward [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Cartwright, Keith [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Kiefer, Mark L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Cuneo, Michael E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Radiographic Technologies Dept.; Maron, Yitzhak [Weizmann Inst. of Science, Rehovot (Israel)

2017-11-01

This LDRD investigated plasma formation, field strength, and current loss in pulsed power diodes. In particular the Self-Magnetic Pinch (SMP) e-beam diode was studied on the RITS-6 accelerator. Magnetic fields of a few Tesla and electric fields of several MV/cm were measured using visible spectroscopy techniques. The magnetic field measurements were then used to determine the current distribution in the diode. This distribution showed that significant beam current extends radially beyond the few millimeter x-ray focal spot diameter. Additionally, shielding of the magnetic field due to dense electrode surface plasmas was observed, quantified, and found to be consistent with the calculated Spitzer resistivity. In addition to the work on RITS, measurements were also made on the Z-machine looking to quantify plasmas within the power flow regions. Measurements were taken in the post-hole convolute and final feed gap regions on Z. Dopants were applied to power flow surfaces and measured spectroscopically. These measurements gave species and density/temperature estimates. Preliminary B-field measurements in the load region were attempted as well. Finally, simulation work using the EMPHASIS, electromagnetic particle in cell code, was conducted using the Z MITL conditions. The purpose of these simulations was to investigate several surface plasma generations models under Z conditions for comparison with experimental data.

A New Resonant Capacitor Diode Voltage Multiplier Topology for Pulsed Power Application

Directory of Open Access Journals (Sweden)

Mohammad Kebriaei

2017-09-01

Full Text Available Today, the pulsed power systems have been employed in many applications. To meet the requirement of user, the pulse generator should enjoy the advantages of compactness, high flexibility, high pulse repetition rate and cost efficiency. Among all of converters that can be used to generate high voltage pulses, capacitance diode voltage multiplier (CDVM is a good candidate to meet the mentioned requirements. In this paper a new converter that is combination of full-bridge inverter, CDVM and resonant circuit is proposed. The performance of developed converter is compared with the conventional circuits and is demonstrated via simulation in MATLAB/SIMULINK. Experimental tests on a prototype setup have verified the capability of this topology.

Ultra-high brightness wavelength-stabilized kW-class fiber coupled diode laser

Science.gov (United States)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-03-01

TeraDiode has produced a fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Further advances of these ultra-bright lasers are also projected.

Power saving regulated light emitting diode circuit

International Nuclear Information System (INIS)

Haville, G. D.

1985-01-01

A power saving regulated light source circuit, comprising a light emitting diode (LED), a direct current source and a switching transistor connected in series with the LED, a control voltage producing resistor connected in series with the LED to produce a control voltage corresponding to the current through the LED, a storage capacitor connected in parallel with the series combination of the LED and the resistor, a comparator having its output connected to the input of the transistor, the comparator having a reference input and a control input, a stabilized biasing source for supplying a stabilized reference voltage to the reference input, the control input of the comparator being connected to the control voltage producing resistor, the comparator having a high output state when the reference voltage exceeds the control voltage while having a low output state when the control voltage exceeds the reference voltage, the transistor being conductive in response to the high state while being nonconductive in response to the low state, the transistor when conductive being effective to charge the capacitor and to increase the control voltage, whereby the comparator is cycled between the high and low output states while the transistor is cycled between conductive and nonconductive states

A simple approximation for the current-voltage characteristics of high-power, relativistic diodes

Energy Technology Data Exchange (ETDEWEB)

Ekdahl, Carl, E-mail: cekdahl@lanl.gov [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2016-06-15

A simple approximation for the current-voltage characteristics of a relativistic electron diode is presented. The approximation is accurate from non-relativistic through relativistic electron energies. Although it is empirically developed, it has many of the fundamental properties of the exact diode solutions. The approximation is simple enough to be remembered and worked on almost any pocket calculator, so it has proven to be quite useful on the laboratory floor.

High-power fiber-coupled pump lasers for fiber lasers

Science.gov (United States)

Kasai, Yohei; Aizawa, Takuya; Tanaka, Daiichiro

2018-02-01

We present high-power fiber-coupled pump modules utilized effectively for ultra-high power single-mode (SM) fiber lasers. Maximum output power of 392 W was achieved at 23 A for 915 nm pump, and 394 W for 976 nm pump. Fiber core diameter is 118 μm and case temperature is 25deg. C. Polarization multiplexing technique was newly applied to our optical system. High-reliability of the laser diodes (LD) at high-power operation has been demonstrated by aging tests. Advanced package structure was developed that manages uncoupled light around input end of the fiber. 800 hours continuous drive with uncoupled light power of 100 W has been achieved.

Compact 2100 nm laser diode module for next-generation DIRCM

Science.gov (United States)

Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

2017-10-01

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

High-brightness tapered laser diodes with photonic crystal structures

Science.gov (United States)

Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun

2018-02-01

Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.

High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region

KAUST Repository

Khan, Mohammed Zahed Mustafa; Majid, Mohammed Abdul; Ng, Tien Khee; Ooi, Boon S.

2013-01-01

The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.

High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

KAUST Repository

Shen, Chao

2016-01-25

To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

KAUST Repository

Shen, Chao; Ng, Tien Khee; Leonard, John T.; Pourhashemi, Arash; Oubei, Hassan M.; Alias, Mohd Sharizal; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S.

2016-01-01

To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

Design and fabrication of metal-insulator-metal diode for high frequency applications

Science.gov (United States)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

Self-mode-locking operation of a diode-end-pumped Tm:YAP laser with watt-level output power

Science.gov (United States)

Zhang, Su; Zhang, Xinlu; Huang, Jinjer; Wang, Tianhan; Dai, Junfeng; Dong, Guangzong

2018-03-01

We report on a high power continuous wave (CW) self-mode-locked Tm:YAP laser pumped by a 792 nm laser diode. Without any additional mode-locking elements in the cavity, stable and self-starting mode-locking operation has been realized. The threshold pump power of the CW self-mode-locked Tm:YAP laser is only 5.4 W. The maximum average output power is as high as 1.65 W at the pump power of 12 W, with the repetition frequency of 468 MHz and the center wavelength of 1943 nm. To the best of our knowledge, this is the first CW self-mode-locked Tm:YAP laser. The experiment results show that the Tm:YAP crystal is a promising gain medium for realizing the high power self-mode-locking operation at 2 µm.

Novel short-pulse laser diode source for high-resolution 3D flash lidar

Science.gov (United States)

Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

2017-06-01

Imaging based on laser illumination is present in various fields of applications such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified the recent years. Among the various technologies currently studied, automotive lidars are a fast-growing one due to their accuracy to detect a wide range of objects at distances up to a few hundreds of meters in various weather conditions. First commercialized devices for ADAS were laser scanners. Since then, new architectures have recently appeared such as solid-state lidar and flash lidar that offer a higher compactness, robustness and a cost reduction. Flash lidars are based on time-of-flight measurements, with the particularity that they do not require beam scanners because only one short laser pulse with a large divergence is used to enlighten the whole scene. Depth of encountered objects can then be recovered from measurement of echoed light at once, hence enabling real-time 3D mapping of the environment. This paper will bring into the picture a cutting edge laser diode source that can deliver millijoule pulses as short as 12 ns, which makes them highly suitable for integration in flash lidars. They provide a 100-kW peak power highly divergent beam in a footprint of 4x5 cm2 (including both the laser diode and driver) and with a 30-% electrical-to-optical efficiency, making them suitable for integration in environments in which compactness and power consumption are a priority. Their emission in the range of 800-1000 nm is considered to be eye safe when taking into account the high divergence of the output beam. An overview of architecture of these state-of-the-art pulsed laser diode sources will be given together with some solutions for their integration in 3D mapping systems. Future work leads will be discussed for miniaturization of the laser diode and drastic cost reduction.

Improving the reverse recovery of power MOSFET integral diodes by electron irradiation

International Nuclear Information System (INIS)

Baliga, B.J.; Walden, J.P.

1983-01-01

Using 3 MeV electron irradiation at room temperature it was found that the reverse recovery charge in the integral diode could be continuously reduced in a well controlled manner from over 500nC to less than 100nC without any significant increase in the forward voltage drop of the integral diode under typical operating peak currents. The reverse recovery time was also observed to decrease from 3 microseconds to less than 200 nsec when the radiation dose was increased from 0 to 16 Megarads. The damage produced in gate oxide of the MOSFET due to the electron radiation damage was found to cause an undesirable decrease in the gate threshold voltage. This resulted in excessive channel leakage current flow in the MOSFET at zero gate bias. It was found that this channel leakage current was substantially reduced by annealing the devices at 140 0 C without influencing the integral diode reverse recovery speed. Thus, the electron irradiation technique was found to be effective in controlling the integral diode reverse recovery characteristics without any degradation of the power MOSFET characteristics. (author)

Coherent beam combining architectures for high power tapered laser arrays

Science.gov (United States)

Schimmel, G.; Janicot, S.; Hanna, M.; Decker, J.; Crump, P.; Erbert, G.; Witte, U.; Traub, M.; Georges, P.; Lucas-Leclin, G.

2017-02-01

Coherent beam combining (CBC) aims at increasing the spatial brightness of lasers. It consists in maintaining a constant phase relationship between different emitters, in order to combine them constructively in one single beam. We have investigated the CBC of an array of five individually-addressable high-power tapered laser diodes at λ = 976 nm, in two architectures: the first one utilizes the self-organization of the lasers in an interferometric extended-cavity, which ensures their mutual coherence; the second one relies on the injection of the emitters by a single-frequency laser diode. In both cases, the coherent combining of the phase-locked beams is ensured on the front side of the array by a transmission diffractive grating with 98% efficiency. The passive phase-locking of the laser bar is obtained up to 5 A (per emitter). An optimization algorithm is implemented to find the proper currents in the five ridge sections that ensured the maximum combined power on the front side. Under these conditions we achieve a maximum combined power of 7.5 W. In the active MOPA configuration, we can increase the currents in the tapered sections up to 6 A and get a combined power of 11.5 W, corresponding to a combining efficiency of 76%. It is limited by the beam quality of the tapered emitters and by fast phase fluctuations between emitters. Still, these results confirm the potential of CBC approaches with tapered lasers to provide a high-power and high-brightness beam, and compare with the current state-of-the-art with laser diodes.

In vitro study of 960 nm high power diode laser applications in dental enamel, aided by the presence of a photoinitiator dye: scanning electron microscopy analysis

International Nuclear Information System (INIS)

Oliveira, Marcelo Vinicius de

2002-06-01

The objective of this study is to verify if a high power diode laser can effectively modify the morphology of an enamel surface, and if this can be done in a controlled fashion by changing the lasers parameters. Previous studies using SEM demonstrated that through irradiation with Nd:YAG laser (1064 nm) it is possible to modify the morphology of the dental surface in such way as to increase its resistance against caries decays. The desired procedures that should achieve a decrease of the index of caries decays and of its sequels are on a primary level, which means that action is necessary before the disease installs itself. In this study it was used for the first time a prototype of a high power diode laser operating at 960 nm, produced by the Laboratory of Development of Lasers of the Center for Lasers and Applications of the IPEN. This equipment can present several advantages as reliability, reduced size and low cost. The aim was establish parameters of laser irradiation that produce the desired effects wanted in the enamel and protocols that guarantee its safety during application in dental hard tissues, protecting it of heating effects such as fissures and carbonization. (author)

High power electron beam accelerators for gas laser excitation

International Nuclear Information System (INIS)

Kelly, J.G.; Martin, T.H.; Halbleib, J.A.

1976-06-01

A preliminary parameter investigation has been used to determine a possible design of a high-power, relativistic electron beam, transversely excited laser. Based on considerations of present and developing pulsed power technology, broad area diode physics and projected laser requirements, an exciter is proposed consisting of a Marx generator, pulse shaping transmission lines, radially converging ring diodes and a laser chamber. The accelerator should be able to deliver approximately 20 kJ of electron energy at 1 MeV to the 10 4 cm 2 cylindrical surface of a laser chamber 1 m long and 0.3 m in diameter in 24 ns with very small azimuthal asymmetry and uniform radial deposition

A New Approach to High Efficincy in Isolated Boost Converters for High-Power Low-Voltage Fuel Cell Apllications

DEFF Research Database (Denmark)

Nymand, Morten; Andersen, Michael A. E.

2008-01-01

A new low-leakage-inductance low-resistance design approach to low-voltage high-power isolated boost converters is presented. Very low levels of parasitic circuit inductances are achieved by optimizing transformer design and circuit lay-out. Primary side voltage clamp circuits can be eliminated...... by the use of power MOSFETs fully rated for repetitive avalanche. Voltage rating of primary switches can now be reduced, significantly reducing switch on-state losses. Finally, silicon carbide rectifying diodes allow fast diode turn-off, further reducing losses. Test results from a 1.5 kW full-bridge boost...... converter verify theoretical analysis and demonstrate very high efficiency. Worst case efficiency, at minimum input voltage maximum power, is 96.8 percent and maximum efficiency reaches 98 percent....

High efficiency and broadband acoustic diodes

Science.gov (United States)

Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

2018-01-01

Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

Large-signal modeling method for power FETs and diodes

Energy Technology Data Exchange (ETDEWEB)

Sun Lu; Wang Jiali; Wang Shan; Li Xuezheng; Shi Hui; Wang Na; Guo Shengping, E-mail: sunlu_1019@126.co [School of Electromechanical Engineering, Xidian University, Xi' an 710071 (China)

2009-06-01

Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

Large-signal modeling method for power FETs and diodes

International Nuclear Information System (INIS)

Sun Lu; Wang Jiali; Wang Shan; Li Xuezheng; Shi Hui; Wang Na; Guo Shengping

2009-01-01

Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films

Science.gov (United States)

2013-01-01

In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory. PMID:23634999

A portable high-power diode laser-based single-stage ceramic tile grout sealing system

Science.gov (United States)

Lawrence, J.; Schmidt, M. J. J.; Li, L.; Edwards, R. E.; Gale, A. W.

2002-02-01

By means of a 60 W high-power diode laser (HPDL) and a specially developed grout material the void between adjoining ceramic tiles has been successfully sealed. A single-stage process has been developed which uses a crushed ceramic tile mix to act as a tough, inexpensive bulk substrate and a glazed enamel surface to provide an impervious surface glaze. The single-stage ceramic tile grout sealing process yielded seals produced in normal atmospheric conditions that displayed no discernible cracks and porosities. The single-stage grout is simple to formulate and easy to apply. Tiles were successfully sealed with power densities as low as 200 kW/ mm2 and at rates of up to 600 mm/ min. Bonding of the enamel to the crushed ceramic tile mix was identified as being primarily due to van der Waals forces and, on a very small scale, some of the crushed ceramic tile mix material dissolving into the glaze. In terms of mechanical, physical and chemical characteristics, the single-stage ceramic tile grout was found to be far superior to the conventional epoxy tile grout and, in many instances, matched and occasionally surpassed that of the ceramic tiles themselves. What is more, the development of a hand-held HPDL beam delivery unit and the related procedures necessary to lead to the commercialisation of the single-stage ceramic tile grout sealing process are presented. Further, an appraisal of the potential hazards associated with the use of the HPDL in an industrial environment and the solutions implemented to ensure that the system complies with the relevant safety standards are given.

270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

Science.gov (United States)

Grandusky, James R.; Chen, Jianfeng; Gibb, Shawn R.; Mendrick, Mark C.; Moe, Craig G.; Rodak, Lee; Garrett, Gregory A.; Wraback, Michael; Schowalter, Leo J.

2013-03-01

In this letter, the achievement of over 60 mW output power from pseudomorphic ultraviolet light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.

Diode laser (980nm) cartilage reshaping

Science.gov (United States)

El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

2011-03-01

Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

Experimental set-up for high-power pulsed X-rays on the basis of a high-current electron accelerator diode with a pointed brass cathode and an aluminum anode target

International Nuclear Information System (INIS)

Goncharov, V.K.; Krekoten', O.V.; Makarov, V.V.

2015-01-01

The main aim of this article is to assess experimentally the possibility for the development and manufacturing of a high-power pulse X-ray source on the basis of a high-current electron accelerator of the diode type. This task was realized using a vacuum diode with the explosive plasma cathode from brass and an anode of aluminum foil 850 microns thick. As a result of the experiments performed, it is shown that, for this metal of the anode, the component of X-rays, propagating along electron beam motion, has bigger energy weight than the reflected one. The photographic paper placed in a black dense paper holder was used as a sensor. It is necessary to mark that at present the current investigations have a purely qualitative character. At the same time, the authors have succeeded to define an angle of divergence (~90°) of the generated radiation after an aluminum target. The possibility of generating bremsstrahlung and also the energy estimates indicate applicability of this installation in pure research, and application-oriented purposes, for example, for monitoring of the radiation stability of different electronic products. (authors)

Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques

International Nuclear Information System (INIS)

Hazdra, P.; Vobecky, J.; Brand, K.

2002-01-01

Application of radiation defects for adjustment of power diode parameters is demonstrated. Local lifetime control (LLC) by proton and alpha-particle irradiation with energies 1.8-12.1 MeV is compared with uniform lifetime killing by 4.5 MeV electrons. The influence of both the techniques on static and dynamic parameters of modified diodes is experimentally established and explained by means of state-of-the-art simulation system. Optimization means and limits of lifetime control by irradiation techniques are discussed, as well

Comparison of a novel high-power blue diode laser (λ=442 nm) with Ho:YAG (λ=2100 nm), Tm fiber (λ=1940 nm), and KTP (λ=532 nm) lasers for soft tissue ablation

Science.gov (United States)

Vinnichenko, Victoriya; Kovalenko, Anastasiya; Arkhipova, Valeriya; Yaroslavsky, Ilya; Altshuler, Gregory; Gapontsev, Valentin

2018-02-01

Three lasers were directly compared, including the Ho:YAG laser (λ = 2100 nm), Tm fiber laser (λ = 1940 nm) operating in 3 different modes (CW, regular pulse, and super pulse), and blue diode laser (λ = 442 nm) for vaporization and coagulation efficiency for treating blood-rich soft tissues, ex vivo, in a porcine kidney model at quasi-contact cutting in water. In addition, experimental results were compared with published data on performance of KTP laser (λ = 532 nm) at similar experimental settings (Power = 60 W and cutting speed = 2 mm/s). Tm fiber laser in pulsed mode and blue laser produced highest vaporization rates of 3.7 and 3.4 mm3/s, respectively. Tm fiber laser (in both CW and pulsed modes) also produced the largest coagulation zone among the laser sources tested. A carbonization zone was observed for Tm fiber laser in CW and pulsed modes, as well as for the blue diode laser. Tm fiber laser in super-pulse mode and Ho:YAG laser both resulted in irregular coagulation zones without carbonization. Comparison with known data for KTP laser revealed that tissue effects of the blue laser are similar to that of the KTP laser. These results suggest that the combination of the two lasers (Tm fiber and blue diode) in one system may achieve high cutting efficiency and optimal coagulation for hemostasis during surgical treatment. Ex vivo testing of the combined system revealed feasibility of this approach. The combination of the CW Tm fiber laser (120W) and the blue diode laser (60W) emitting through a combination tip were compared with CW 120 W Tm fiber laser alone and 120 W Ho:YAG laser. Vaporization rates measured 34, 28, and 6 mm3/s, and coagulation zones measured 0.6, 1.3, and 1.7 mm, respectively. A carbonization zone was only observed with CW Tm fiber laser. The vaporization rate of combined CW Tm fiber laser / blue diode laser was comparable to published data for KTP laser for equivalent total power. Thus, high-power blue diode laser, Tm fiber laser, and

Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

Energy Technology Data Exchange (ETDEWEB)

Hadzi-Vukovic, J [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Jevtic, M [Institute for Physics, Pregrevica 118, 11080 Zemun (Serbia and Montenegro); Rothleitner, H [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Croce, P Del [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria)

2005-01-01

In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits.

Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

International Nuclear Information System (INIS)

Hadzi-Vukovic, J; Jevtic, M; Rothleitner, H; Croce, P Del

2005-01-01

In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits

High power light emitting diode (LED) arrays versus halogen light polymerization of oral biomaterials: Barcol hardness, compressive strength and radiometric properties.

Science.gov (United States)

Mills, Robin W; Uhl, Alexander; Blackwell, Gordon B; Jandt, Klaus D

2002-07-01

The clinical performance of light polymerized dental composites is greatly influenced by the quality of the light curing unit (LCU) used. Commonly used halogen LCUs have some specific drawbacks such as decreasing light output with time. This may result in a low degree of monomer conversion of the composites with negative clinical implications. Previous studies have shown that blue light emitting diode (LED) LCUs have the potential to polymerize dental composites without having the drawbacks of halogen LCUs. Since these studies were carried out LED technology has advanced significantly and commercial LED LCUs are now becoming available. This study investigates the Barcol hardness as a function of depth, and the compressive strength of dental composites that had been polymerized for 40 or 20s with two high power LED LCU prototypes, a commercial LED LCU, and a commercial halogen LCU. In addition the radiometric properties of the LCUs were characterized. The two high power prototype LED LCUs and the halogen LCU showed a satisfactory and similar hardness-depth performance whereas the hardness of the materials polymerized with the commercial LED LCU rapidly decreased with sample depth and reduced polymerization time (20 s). There were statistically significant differences in the overall compressive strengths of composites polymerized with different LCUs at the 95% significance level (p = 0.0016) with the two high power LED LCU prototypes and the halogen LCU forming a statistically homogenous group. In conclusion, LED LCU polymerization technology can reach the performance level of halogen LCUs. One of the first commercial LED LCUs however lacked the power reserves of the high power LED LCU prototypes.

High power, medium voltage, series resonant converter for DC wind turbines

DEFF Research Database (Denmark)

Dincan, Catalin Gabriel; Kjær, Philip Carne; Chen, Yu-Hsing

2018-01-01

, and the resulting compact and efficient transformer, and soft-commutated inverter, present particular advantages in high-power, high-voltage applications, like DC offshore wind turbines. With transformer excitation frequency in hundreds of Hz range, line-frequency diodes can be employed in the high...

Diode lasers optimized in brightness for fiber laser pumping

Science.gov (United States)

Kelemen, M.; Gilly, J.; Friedmann, P.; Hilzensauer, S.; Ogrodowski, L.; Kissel, H.; Biesenbach, J.

2018-02-01

In diode laser applications for fiber laser pumping and fiber-coupled direct diode laser systems high brightness becomes essential in the last years. Fiber coupled modules benefit from continuous improvements of high-power diode lasers on chip level regarding output power, efficiency and beam characteristics resulting in record highbrightness values and increased pump power. To gain high brightness not only output power must be increased, but also near field widths and far field angles have to be below a certain value for higher power levels because brightness is proportional to output power divided by beam quality. While fast axis far fields typically show a current independent behaviour, for broadarea lasers far-fields in the slow axis suffer from a strong current and temperature dependence, limiting the brightness and therefore their use in fibre coupled modules. These limitations can be overcome by carefully optimizing chip temperature, thermal lensing and lateral mode structure by epitaxial and lateral resonator designs and processing. We present our latest results for InGaAs/AlGaAs broad-area single emitters with resonator lengths of 4mm emitting at 976nm and illustrate the improvements in beam quality over the last years. By optimizing the diode laser design a record value of the brightness for broad-area lasers with 4mm resonator length of 126 MW/cm2sr has been demonstrated with a maximum wall-plug efficiency of more than 70%. From these design also pump modules based on 9 mini-bars consisting of 5 emitters each have been realized with 360W pump power.

Effects of uneven temperature of IGBT and diode on switching characteristics of bridge legs in MW-level power converters

DEFF Research Database (Denmark)

Luo, Haoze; Iannuzzo, Francesco; Blaabjerg, Frede

2016-01-01

profile, the junction temperatures of inspected IGBT and related commutation diode are controlled independently using off-line test platform. In consideration of the structural layout, parasitic parameter effects and independent junction temperature control, a high-power switching characteristics platform...... was built. High power compact IGBT modules with 1.7kV rating and 3.6kA current rating are used for the experimental evaluation and platform feasibility. The quantitative analyses of uneven temperature effects on the switching characteristics are investigated and experimentally validated....

Optical design and fabrication of palm/fingerprint uniform illumination system with a high-power near-infrared light-emitting diode.

Science.gov (United States)

Jing, Lei; Wang, Yao; Zhao, Huifu; Ke, Hongliang; Wang, Xiaoxun; Gao, Qun

2017-06-10

In order to meet the requirements of uniform illumination for optical palm/fingerprint instruments and overcome the shortcomings of the poor uniform illumination on the working plane of the optical palm/fingerprint prism, a novel secondary optical lens with a free-form surface, compact structure, and high uniformity is presented in this paper. The design of the secondary optical lens is based on emission properties of the near-infrared light-emitting diode (LED) and basic principles of non-imaging optics, especially considering the impact of the thickness of the prism in the design. Through the numerical solution of Snell's law in geometric optics, we obtain the profile of the free-form surface of the lens. Using the optical software TracePro, we trace and simulate the illumination system. The results show that the uniformity is 89.8% on the working plane of the prism, and the test results show that the actual uniformity reaches 85.7% in the experiment, which provides an effective way for realizing a highly uniform illumination system with high-power near-infrared LED.

5.5 W of Diffraction-Limited Green Light Generated by SFG of Tapered Diode Lasers in a Cascade of Nonlinear Crystals

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Jensen, Ole Bjarlin; Andersen, Peter Eskil

2015-01-01

Diode-based high power visible lasers are perfect pump sources for, e.g., titaniumsapphire lasers. The combination of favorable scaling laws in both SFG and cascading of nonlinear crystals allows access to unprecedented powers in diode-based systems.......Diode-based high power visible lasers are perfect pump sources for, e.g., titaniumsapphire lasers. The combination of favorable scaling laws in both SFG and cascading of nonlinear crystals allows access to unprecedented powers in diode-based systems....

Effect of thermal processes on critical operation conditions of high-power laser diodes

Energy Technology Data Exchange (ETDEWEB)

Parashchuk, V V [Institute of Physics, Belarus Academy of Sciences, Minsk (Belarus); Vu Doan Mien [Institute of Materials Science, Vietnamese Academy of Science and Technology, Hanoi (Viet Nam)

2013-10-31

Using numerical and analytical techniques in a threedimensional approximation, we have modelled the effect of spatial thermoelastic stress nonuniformity in a laser diode – heat sink system on the output characteristics of the device in different operation modes. We have studied the influence of the pulse duration, the geometry of the laser system and its thermophysical parameters on the critical pump current density, in particular for state-of-the-art heat conductive substrate materials. The proposed approach has been used to optimise the laser diode assembly process in terms of the quality of laser crystal positioning (bonding) on a heat sink. (lasers)

Dimensional characteristics of welds performed on AISI 1045 steel by means of the application of high power diode laser; Caracteristicas dimensionales de soldadura formadas sobre el acero AISI 1045 mediante la aplicacion del laser diodo de alta potencia

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Castillo, A.; Pou, J.; Lusquinos, F.; Quintero, F.; Soto, R.; Boutinguiza, M.; Saavedra, M.; Perez-Amor, M.

2004-07-01

The named High Power diode Laser (HPDL), emits a beam of optical energy generated by diode stimulation and offers the capability of supplying levels of power up to 6 kW. The objective of this research work was to study the main welding variables and their effects on dimensional characteristics of the beads performed by means of application of this novel laser. The results obtained, show that HPDL, is an energy source able to perform welds on AISI 1045 steel plates under conduction mode, without any kind of mechanized preparation, preheating or post-weld treatment and, without filler metal application. (Author) 16 refs.

Ion diode diagnostics to resolve beam quality issues

Energy Technology Data Exchange (ETDEWEB)

Bluhm, H; Buth, L; Hoppe, P [Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik; and others

1997-12-31

Various diagnostic methods and instruments are under development at the Forschungszentrum Karlsruhe to measure important physical quantities in the accelerating gap of high power diodes on KALIF with a high spatial and temporal resolution. The methods include optical spectroscopy, refractive index measurements, dispersion interferometry, and high resolution energy analysis. The setup of these diagnostic tools and the first results obtained for applied and self-magnetically insulated diodes are presented. (author). 6 figs., 5 refs.

Design and development of a high-power, 500 kV pulsed line

International Nuclear Information System (INIS)

Nicolas, A.

A study was made of very high voltage (500 kV) pulse production for 50 ns at half height. A coaxial line was coupled to a Marx generator for obtaining the pulses on an impedance-adapted electron diode. The maximum power obtained was 6.4 x 10 10 W with a current front in the diode of about 30 ns (80 ns pulse length at half height)

High power laser exciter accelerators

International Nuclear Information System (INIS)

Martin, T.H.

1975-01-01

Recent developments in untriggered oil and water switching now permit the construction of compact, high energy density pulsed power sources for laser excitation. These accelerators, developed principally for electron beam fusion studies, appear adaptable to laser excitation and will provide electron beams of 10 13 to 10 14 W in the next several years. The accelerators proposed for e-beam fusion essentially concentrate the available power from the outside edge of a disk into the central region where the electron beam is formed. One of the main problem areas, that of power flow at the vacuum diode insulator, is greatly alleviated by the multiplicity of electron beams that are allowable for laser excitation. A proposal is made whereby the disk-shaped pulsed power sections are stacked vertically to form a series of radially flowing electron beams to excite the laser gas volume. (auth)

Planar transistors and impatt diodes with ion implantation

International Nuclear Information System (INIS)

Dorendorf, H.; Glawischnig, H.; Grasser, L.; Hammerschmitt, J.

1975-03-01

Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB [de

Uniform current density and divergence control in high power extraction ion diodes

International Nuclear Information System (INIS)

Desjarlais, M.P.; Coats, R.S.; Lockner, T.R.; Pointon, T.D.; Johnson, D.J.; Slutz, S.A.; Lemke, R.W.; Cuneo, M.E.; Mehlhorn, T.A.

1996-01-01

A theory of radial beam uniformity in extraction ion diodes is presented. The theory is based on a locally one-dimensional analysis of the diamagnetic compression of magnetic streamlines and the self-consistent determination of the virtual cathode location. The radial dependence of the applied magnetic field is used to determine the critical parameters of this locally one-dimensional treatment. The theory has been incorporated into the ATHETA magnetic field code to allow the rapid evaluation of realistic magnetic field configurations. Comparisons between the theoretical results, simulations with the QUICKSILVER code, and experiments on the PBFA-X accelerator establish the usefulness of this tool for tuning magnetic fields to improve ion beam uniformity. The consequences of poor beam uniformity on the evolution of ion diode instabilities are discussed with supporting evidence from simulations, theory, and experiments. (author). 8 figs., 15 refs

Uniform current density and divergence control in high power extraction ion diodes

International Nuclear Information System (INIS)

Desjarlais, M.P.; Coats, R.S.; Lockner, T.R.; Pointon, T.D.; Johnson, D.J.; Slutz, S.A.; Lemke, R.W.; Cuneo, M.E.; Melhorn, T.A.

1996-01-01

A theory of radial beam uniformity in extraction ion diodes is presented. The theory is based on a locally one dimensional analysis of the diamagnetic compression of magnetic streamlines and the self consistent determination of the virtual cathode location. The radial dependence of the applied magnetic field is used to determine the critical parameters of this locally one dimensional treatment. The theory has been incorporated into the ATHETA magnetic field code to allow the rapid evaluation of realistic magnetic field configurations. Comparisons between the theoretical results, simulations with the QUICKSILVER code, and experiments on the PBFA-X accelerator establish the usefulness of this tool for tuning magnetic fields to improve ion beam uniformity. The consequences of poor beam uniformity on the evolution of ion diode instabilities are discussed with supporting evidence from simulations, theory, and experiments

Uniform current density and divergence control in high power extraction ion diodes

Energy Technology Data Exchange (ETDEWEB)

Desjarlais, M P; Coats, R S; Lockner, T R; Pointon, T D; Johnson, D J; Slutz, S A; Lemke, R W; Cuneo, M E; Mehlhorn, T A [Sandia Labs., Albuquerque, NM (United States)

1997-12-31

A theory of radial beam uniformity in extraction ion diodes is presented. The theory is based on a locally one-dimensional analysis of the diamagnetic compression of magnetic streamlines and the self-consistent determination of the virtual cathode location. The radial dependence of the applied magnetic field is used to determine the critical parameters of this locally one-dimensional treatment. The theory has been incorporated into the ATHETA magnetic field code to allow the rapid evaluation of realistic magnetic field configurations. Comparisons between the theoretical results, simulations with the QUICKSILVER code, and experiments on the PBFA-X accelerator establish the usefulness of this tool for tuning magnetic fields to improve ion beam uniformity. The consequences of poor beam uniformity on the evolution of ion diode instabilities are discussed with supporting evidence from simulations, theory, and experiments. (author). 8 figs., 15 refs.

Diode lasers and arrays

International Nuclear Information System (INIS)

Streifer, W.

1988-01-01

This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

Science.gov (United States)

Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

2017-05-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

Manufacturing polymer light emitting diode with high luminance efficiency by solution process

Science.gov (United States)

Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

2012-06-01

While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

High power pulsed sources based on fiber amplifiers

Science.gov (United States)

Canat, Guillaume; Jaouën, Yves; Mollier, Jean-Claude; Bouzinac, Jean-Pierre; Cariou, Jean-Pierre

2017-11-01

Cladding-pumped rare-earth-doped fiber laser technologies are currently among the best sources for high power applications. Theses extremely compact and robust sources appoint them as good candidate for aeronautical and space applications. The double-clad (DC) fiber converts the poor beamquality of high-power large-area pump diodes from the 1st cladding to laser light at another wavelength guided in an active single-mode core. High-power coherent MOPA (Master Oscillator Power Amplifier) sources (several 10W CW or several 100W in pulsed regime) will soon be achieved. Unfortunately it also brings nonlinear effects which quickly impairs output signal distortions. Stimulated Brillouin scattering (SBS) and optical parametric amplification (OPA) have been shown to be strong limitations. Based on amplifier modeling and experiments we discuss the performances of these sources.

Modelling of the thermal parameters of high-power linear laser-diode arrays. Two-dimensional transient model

International Nuclear Information System (INIS)

Bezotosnyi, V V; Kumykov, Kh Kh

1998-01-01

A two-dimensional transient thermal model of an injection laser is developed. This model makes it possible to analyse the temperature profiles in pulsed and cw stripe lasers with an arbitrary width of the stripe contact, and also in linear laser-diode arrays. This can be done for any durations and repetition rates of the pump pulses. The model can also be applied to two-dimensional laser-diode arrays operating quasicontinuously. An analysis is reported of the influence of various structural parameters of a diode array on the thermal regime of a single laser. The temperature distributions along the cavity axis are investigated for different variants of mounting a crystal on a heat sink. It is found that the temperature drop along the cavity length in cw and quasi-cw laser diodes may exceed 20%. (lasers)

Sliding Mode Pulsed Averaging IC Drivers for High Brightness Light Emitting Diodes

Energy Technology Data Exchange (ETDEWEB)

Dr. Anatoly Shteynberg, PhD

2006-08-17

This project developed new Light Emitting Diode (LED) driver ICs associated with specific (uniquely operated) switching power supplies that optimize performance for High Brightness LEDs (HB-LEDs). The drivers utilize a digital control core with a newly developed nonlinear, hysteretic/sliding mode controller with mixed-signal processing. The drivers are flexible enough to allow both traditional microprocessor interface as well as other options such as “on the fly” adjustment of color and brightness. Some other unique features of the newly developed drivers include • AC Power Factor Correction; • High power efficiency; • Substantially fewer external components should be required, leading to substantial reduction of Bill of Materials (BOM). Thus, the LED drivers developed in this research : optimize LED performance by increasing power efficiency and power factor. Perhaps more remarkably, the LED drivers provide this improved performance at substantially reduced costs compared to the present LED power electronic driver circuits. Since one of the barriers to market penetration for HB-LEDs (in particular “white” light LEDs) is cost/lumen, this research makes important contributions in helping the advancement of SSL consumer acceptance and usage.

External-cavity high-power dual-wavelength tapered amplifier with tunable THz frequency difference

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2012-01-01

A tunable 800 nm high-power dual-wavelength diode laser system with double-Littrow external-cavity feedback is demonstrated. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. A maximum output power of 1.54 W is achie......A tunable 800 nm high-power dual-wavelength diode laser system with double-Littrow external-cavity feedback is demonstrated. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. A maximum output power of 1.54 W...... is achieved with a frequency difference of 0.86 THz, the output power is higher than 1.3 W in the 5.0 THz range of frequency difference, and the amplified spontaneous emission intensity is more than 20 dB suppressed in the range of frequency difference. The beam quality factor M2 is 1.22±0.15 at an output...

Improved power efficiency of blue fluorescent organic light-emitting diode with intermixed host structure

Energy Technology Data Exchange (ETDEWEB)

Yue, Shouzhen; Zhang, Shiming; Zhang, Zhensong; Wu, Yukun; Wang, Peng; Guo, Runda; Chen, Yu; Qu, Dalong; Wu, Qingyang; Zhao, Yi, E-mail: yizhao@jlu.edu.cn; Liu, Shiyong

2013-11-15

High power efficiency (PE) p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-ph) based fluorescent blue organic light-emitting diode (OLED) is demonstrated by utilizing intermixed host (IH) structure. The PE outperforms those devices based on single host (SH), mixed host (MH), and double emitting layers (DELs). By further optimizing the intermixed layer, peak PE of the IH device is increased up to 8.7 lm/W (1.7 times higher than conventional SH device), which is the highest value among the DSA-ph based blue device reported so far. -- Highlights: • DSA-ph based blue fluorescent OLEDs are fabricated. • The intermixed host structure is first introduced into the blue devices. • Blue device with the highest power efficiency based on DSA-ph is obtained.

Improvement in reduced-mode (REM) diodes enable 315 W from 105-μm 0.15-NA fiber-coupled modules

Science.gov (United States)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2018-02-01

High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - and 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.

High speed micromachining with high power UV laser

Science.gov (United States)

Patel, Rajesh S.; Bovatsek, James M.

2013-03-01

Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

International Nuclear Information System (INIS)

Lagov, P B; Drenin, A S; Zinoviev, M A

2017-01-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding. (paper)

Amplified spontaneous emission and thermal management on a high average-power diode-pumped solid-state laser - the Lucia laser system

International Nuclear Information System (INIS)

Albach, D.

2010-01-01

The development of the laser triggered the birth of numerous fields in both scientific and industrial domains. High intensity laser pulses are a unique tool for light/matter interaction studies and applications. However, current flash-pumped glass-based systems are inherently limited in repetition-rate and efficiency. Development within recent years in the field of semiconductor lasers and gain media drew special attention to a new class of lasers, the so-called Diode Pumped Solid State Laser (DPSSL). DPSSLs are highly efficient lasers and are candidates of choice for compact, high average-power systems required for industrial applications but also as high-power pump sources for ultra-high intense lasers. The work described in this thesis takes place in the context of the 1 kilowatt average-power DPSSL program Lucia, currently under construction at the 'Laboratoire d'Utilisation des Laser Intenses' (LULI) at the Ecole Polytechnique, France. Generation of sub-10 nanosecond long pulses with energies of up to 100 joules at repetition rates of 10 hertz are mainly limited by Amplified Spontaneous Emission (ASE) and thermal effects. These limitations are the central themes of this work. Their impact is discussed within the context of a first Lucia milestone, set around 10 joules. The developed laser system is shown in detail from the oscillator level to the end of the amplification line. A comprehensive discussion of the impact of ASE and thermal effects is completed by related experimental benchmarks. The validated models are used to predict the performances of the laser system, finally resulting in a first activation of the laser system at an energy level of 7 joules in a single-shot regime and 6.6 joules at repetition rates up to 2 hertz. Limitations and further scaling approaches are discussed, followed by an outlook for the further development. (author) [fr

A high pulsed power supply system designed for pulsed high magnetic field

International Nuclear Information System (INIS)

Liu Kefu; Wang Shaorong; Zhong Heqing; Xu Yan; Pan Yuan

2008-01-01

This paper introduces the design of high pulsed power supply system for producing pulsed high magnetic field up to 70 T. This system consists of 58 sets of 55 μF of capacitor bank which provides 1.0 MJ energy storage. A set of vacuum closing switch is chosen as main switch for energy discharge into magnetic coil. A crowbar circuit with high power diodes in series with resistor is used to absorb the redundant energy and adjust pulse width. The resistance of magnetic coil changing with current is deduced by energy balance equations. A capacitor-charging power supply using a series-resonant, constant on-time variable frequency control, and zero-current switching charges the capacitor bank in one minute time with high efficiency. The pulsed power supply provides adjustable current and pulse width with 30 kA peak and 30 ms maximum. The primary experiments demonstrate the system reliability. This work provides an engineering guidance for future development of pulsed high magnetic field. (authors)

High-power VCSELs for smart munitions

Science.gov (United States)

Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

2006-08-01

The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

Peak power ratio generator

Science.gov (United States)

Moyer, R.D.

A peak power ratio generator is described for measuring, in combination with a conventional power meter, the peak power level of extremely narrow pulses in the gigahertz radio frequency bands. The present invention in a preferred embodiment utilizes a tunnel diode and a back diode combination in a detector circuit as the only high speed elements. The high speed tunnel diode provides a bistable signal and serves as a memory device of the input pulses for the remaining, slower components. A hybrid digital and analog loop maintains the peak power level of a reference channel at a known amount. Thus, by measuring the average power levels of the reference signal and the source signal, the peak power level of the source signal can be determined.

Efficient high-peak-power and high-repetition-rate eye-safe laser using an intracavity KTP OPO

International Nuclear Information System (INIS)

Guo, J; Jiao, Z X; Wang, B; He, G Y

2015-01-01

An efficient high-peak-power and high-repetition-rate intracavity KTP optical parametric oscillator pumped by a Q-switched Nd:YVO 4 laser is demonstrated. We achieved 1.5 W output power of 1.5 μm at 10 kHz repetition rate with the pulse duration of 6 ns. The maximum peak power of 25 kW and the maximum pulse energy of 150 μJ have been obtained. The maximum conversion efficiency of 9.5% is achieved with respect to a laser diode power of 10.5 W. (paper)

High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

Energy Technology Data Exchange (ETDEWEB)

Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

2014-03-03

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

A compact multi-wavelength optoacoustic system based on high-power diode lasers for characterization of double-walled carbon nanotubes (DWCNTs) for biomedical applications

Science.gov (United States)

Leggio, Luca; de Varona, Omar; Escudero, Pedro; Carpintero del Barrio, Guillermo; Osiński, Marek; Lamela Rivera, Horacio

2015-06-01

During the last decade, Optoacoustic Imaging (OAI), or Optoacoustic Tomography (OAT), has evolved as a novel imaging technique based on the generation of ultrasound waves with laser light. OAI may become a valid alternative to techniques currently used for the detection of diseases at their early stages. It has been shown that OAI combines the high contrast of optical imaging techniques with high spatial resolution of ultrasound systems in deep tissues. In this way, the use of nontoxic biodegradable contrast agents that mark the presence of diseases in near-infrared (NIR) wavelengths range (0.75-1.4 um) has been considered. The presence of carcinomas and harmful microorganisms can be revealed by means of the fluorescence effect exhibited by biopolymer nanoparticles. A different approach is to use carbon nanotubes (CNTs) which are a contrast agent in NIR range due to their absorption characteristics in the range between 800 to 1200 nm. We report a multi-wavelength (870 and 905 nm) laser diode-based optoacoustic (OA) system generating ultrasound signals from a double-walled carbon nanotubes (DWCNTs) solution arranged inside a tissue-like phantom, mimicking the scattering of a biological soft tissue. Optoacoustic signals obtained with DWCNTs inclusions within a tissue-like phantom are compared with the case of ink-filled inclusions, with the aim to assess their absorption. These measurements are done at both 870 and 905 nm, by using high power laser diodes as light sources. The results show that the absorption is relatively high when the inclusion is filled with ink and appreciable with DWCNTs.

High performance MIIM diode based on cobalt oxide/titanium oxide

Science.gov (United States)

Herner, S. B.; Weerakkody, A. D.; Belkadi, A.; Moddel, G.

2017-05-01

Optical rectennas for infrared energy harvesting commonly incorporate metal/double-insulator/metal diodes. Required diode characteristics include high responsivity and low resistance near zero bias with a sub-micron area, which have not been obtainable simultaneously. Diodes based on a new material set, Co/Co3O4/TiO2/Ti and an area of 0.071 μm2, provide a median maximum responsivity of 4.1 A/W, a median zero-bias responsivity of 1.2 A/W, and a median resistance of 14 kΩ. The highest performing diode has a maximum responsivity of 4.4 A/W, a zero-bias responsivity of 2.2 A/W, and a resistance of 18 kΩ.

High power RF oscillator with Marx generators

International Nuclear Information System (INIS)

Murase, Hiroshi; Hayashi, Izumi

1980-01-01

A method to maintain RF oscillation by using many Marx generators was proposed and studied experimentally. Many charging circuits were connected to an oscillator circuit, and successive pulsed charging was made. This successive charging amplified and maintained the RF oscillation. The use of vacuum gaps and high power silicon diodes improved the characteristics of RF current cut-off of the circuit. The efficiency of the pulsed charging from Marx generators to a condenser was theoretically investigated. The theoretical result showed the maximum efficiency of 0.98. The practical efficiency obtained by using a proposed circuit with a high power oscillator was in the range 0.50 to 0.56. The obtained effective output power of the RF pulses was 11 MW. The maximum holding time of the RF pulses was about 21 microsecond. (Kato, T.)

High power VCSELs for miniature optical sensors

Science.gov (United States)

Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

2010-02-01

Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

Silicon monolithic microchannel-cooled laser diode array

International Nuclear Information System (INIS)

Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

2000-01-01

A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

High-power pulsed and CW diode-pumped mode-locked Nd:YAG lasers

Science.gov (United States)

Marshall, Larry R.; Hays, A. D.; Kaz, Alex; Kasinski, Jeff; Burnham, R. L.

1991-01-01

The operation of both pulsed and CW diode-pumped mode-locked Nd:YAG lasers are presented. The pulsed laser produced 1.0 mJ with pulsewidths of 90 psec at 20 Hz. The CW pumped laser produced 6 W output at 1.064 microns and 3 W output at 532 nm.

High Power Factor Hybrid Rectifier | Odeh | Nigerian Journal of ...

African Journals Online (AJOL)

This paper presents the analysis of a new single-phase hybrid rectifier with high power factor (PF) and low harmonic distortion current. The proposed rectifier structure is composed of an ordinary single-phase diode rectifier with parallel connection of a switched converter. It is outlined that the switched converter is capable of ...

High efficiency electrophosphorescence from bilayer organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Li Minghang; Lin, Ming-Te; Shepherd, Nigel D [Department of Material Science and Engineering, University of North Texas, Denton, TX (United States); Chen, Wei-Hsuan; Oswald, Iain; Omary, Mohammad [Department of Chemeistry, University of North Texas, Denton, TX (United States)

2011-09-14

An electron mobility of 2.7 x 10{sup -5} cm{sup 2} V{sup -1} s{sup -1} was measured for the phosphorescent emitter bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II)(Pt(ptp)2), which prompted its evaluation as both the emissive layer and electron transport layer in organic light emitting diodes with a simple bilayer structure. Power and external quantum efficiencies of 54.0 {+-} 0.2 lm W{sup -1} and 15.9% were obtained, which as far as we could ascertain are amongst the highest reported values for bilayer devices. We ascribe the high device efficiency to the combination of the high electron mobility, short excited-state lifetime (117 ns) and high luminescence quantum yield (60%) of the bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II). The colour temperature of the devices was 2855 K at 5 V, which places the emission in the 'warm' light spectral region.

Stability of high current diode under 100-nanosecond-pulse voltage

International Nuclear Information System (INIS)

Lai Dingguo; Qiu Aici; Zhang Yongmin; Huang Jianjun; Ren Shuqing; Yang Li

2012-01-01

Stability of high current diode under pulse voltage with 80 ns and 34 ns rise time was studied on the flash Ⅱ accelerator. Influence of rise time of diode voltage on startup time and cathode emission uniformity and repeatability of diode impedance was analyzed by comparing the experimental results with numerically simulated results, and the influence mechanism was discussed. The startup time of diode increases with the increasing of rise time of voltage, and the repeatability of diode impedance decreases. Discal plane cathode is prone to emit rays intensely in the center area, the time that plasma covers the surface of the cathode increases and the shielding effect has more impact on cathode emission according to the increase of rise time. Local intense emission on the cathode increases expansion speed of plasma and reduces the effective emission area. The stability of characteristic impedance of diode under a pulse voltage with slow rise time is decreased by the combined action of expansion speed of plasma and the effective emission area. (authors)

High-resolution low-frequency fluctuation map of a multimode laser diode subject to filtered optical feedback via a fiber Bragg grating.

Science.gov (United States)

Baladi, Fadwa; Lee, Min Won; Burie, Jean-René; Bettiati, Mauro A; Boudrioua, Azzedine; Fischer, Alexis P A

2016-07-01

A highly detailed and extended map of low-frequency fluctuations is established for a high-power multi-mode 980 nm laser diode subject to filtered optical feedback from a fiber Bragg grating. The low-frequency fluctuations limits and substructures exhibit substantial differences with previous works.

A thermosyphon heat pipe cooler for high power LEDs cooling

Science.gov (United States)

Li, Ji; Tian, Wenkai; Lv, Lucang

2016-08-01

Light emitting diode (LED) cooling is facing the challenge of high heat flux more seriously with the increase of input power and diode density. The proposed unique thermosyphon heat pipe heat sink is particularly suitable for cooling of high power density LED chips and other electronics, which has a heat dissipation potential of up to 280 W within an area of 20 mm × 22 mm (>60 W/cm2) under natural air convection. Meanwhile, a thorough visualization investigation was carried out to explore the two phase flow characteristics in the proposed thermosyphon heat pipe. Implementing this novel thermosyphon heat pipe heat sink in the cooling of a commercial 100 W LED integrated chip, a very low apparent thermal resistance of 0.34 K/W was obtained under natural air convection with the aid of the enhanced boiling heat transfer at the evaporation side and the enhanced natural air convection at the condensation side.

Tunable diode-pumped-LNA laser

International Nuclear Information System (INIS)

Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

1987-01-01

Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

Science.gov (United States)

Frez, Clifford F.; Briggs, Ryan M.; Forouhar, Siamak; Borgentun, Carl E.; Gupta, James

2013-01-01

Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single-mode light sources aboard both satellite and unmanned aerial vehicle platforms. There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 micron, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 micron. For emission wavelengths shorter than 3 micron, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated singlemode GaSb-based laser diodes emitting between 2 and 3 micron have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption. By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-micron lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777/cm (2.65 micron) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3-micron spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available. Monolithic ridge-waveguide GaSb lasers were fabricated that utilize secondorder lateral Bragg gratings to generate single-mode emission from InGaAsSb/ Al

Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers

International Nuclear Information System (INIS)

Chen, Wei-Chung; Hsu, Po-Ching; Chien, Chih-Wei; Chang, Kuei-Ming; Hsu, Chao-Jui; Chang, Ching-Hsiang; Lee, Wei-Kai; Chou, Wen-Fang; Wu, Chung-Chih; Hsieh, Hsing-Hung

2014-01-01

In this work, we report successful implementation of room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu 2 O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu 2 O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44 V, a high rectification ratio of up to 3.4 × 10 4 at ±1.2 V, a high forward current of 1 A cm −2 around 1 V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu 2 O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27 MHz, sufficient for high-frequency (13.56 MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics. (paper)

Method to improve near-field nonlinearity of a high-power diode laser array on a microchannel cooler

Science.gov (United States)

Zhang, Hongyou; Jia, Yangtao; Cai, Wanshao; Tao, Chunhua; Zah, Chung-en; Liu, Xingsheng

2018-03-01

Due to thermal stress, each emitter in a semiconductor laser bar or array is vertically displaced along the p-n junction; the result is that each emitter is not in a line, called near-field nonlinearity. Near-field nonlinearity along a laser bar (also known as "SMILE" effect) degrades the laser beam brightness, which causes an adverse effect on optical coupling and beam shaping. A large SMILE value causes a large divergence angle after collimation and a wider line after collimation and focusing. We simulate the factors affecting the SMILE value of a high-power diode laser array on a microchannel cooler (MCC). According to the simulation results, we have fabricated a series of laser bars bonded on MCCs with lower SMILE value. After simulation and experiment analysis, we found the key factor to affect SMILE is the deformation of the thin MCC because of the distribution of strain and stress in it. We also decreased the SMILE value of 1-cm-wide full bar AuSn bonded on MCCs from 12 to 1 μm by balancing force on MCC to minimize the deformation.

Organic Diode Rectifiers Based on a High-Performance Conjugated Polymer for a Near-Field Energy-Harvesting Circuit.

Science.gov (United States)

Higgins, Stuart G; Agostinelli, Tiziano; Markham, Steve; Whiteman, Robert; Sirringhaus, Henning

2017-12-01

Organic diodes manufactured on a plastic substrate capable of rectifying a high-frequency radio-frequency identification signal (13.56 MHz), with sufficient power to operate an interactive smart tag, are reported. A high-performance conjugated semiconductor (an indacenodithiophene-benzothiadiazole copolymer) is combined with a carefully optimized architecture to satisfy the electrical requirements for an organic-semiconductor-based logic chip. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of an efficient DC-DC SEPIC converter using wide bandgap power devices for high step-up applications

Science.gov (United States)

Al-bayati, Ali M. S.; Alharbi, Salah S.; Alharbi, Saleh S.; Matin, Mohammad

2017-08-01

A highly efficient high step-up dc-dc converter is the major requirement in the integration of low voltage renewable energy sources, such as photovoltaic panel module and fuel cell stacks, with a load or utility. This paper presents the development of an efficient dc-dc single-ended primary-inductor converter (SEPIC) for high step-up applications. Three SEPIC converters are designed and studied using different combinations of power devices: a combination based on all Si power devices using a Si-MOSFET and a Si-diode and termed as Si/Si, a combination based on a hybrid of Si and SiC power devices using the Si-MOSFET and a SiC-Schottky diode and termed as Si/SiC, and a combination based on all SiC power devices using a SiC-MOSFET and the SiC-Schottky diode and termed as SiC/SiC. The switching behavior of the Si-MOSFET and SiC-MOSFET is characterized and analyzed within the different combinations at the converter level. The effect of the diode type on the converter's overall performance is also discussed. The switching energy losses, total power losses, and the overall performance effciency of the converters are measured and reported under different switching frequencies. Furthermore, the potential of the designed converters to operate efficiently at a wide range of input voltages and output powers is studied. The analysis and results show an outstanding performance efficiency of the designed SiC/SiC based converter under a wide range of operating conditions.

Narrow-line external cavity diode laser micro-packaging in the NIR and MIR spectral range

Science.gov (United States)

Jiménez, A.; Milde, T.; Staacke, N.; Aßmann, C.; Carpintero, G.; Sacher, J.

2017-07-01

Narrow-linewidth tunable diode lasers are an important tool for spectroscopic instrumentation. Conventional external cavity diode lasers offer high output power and narrow linewidth. However, most external cavity diode lasers are designed as laboratory instrument and do not allow portability. In comparison, other commonly used lasers, like distributed feedback lasers (DFB) that are capable of driving a handheld device, are limited in power and show linewidths which are not sufficiently narrow for certain applications. We present new miniaturized types of tunable external cavity diode laser which overcome the drawbacks of conventional external cavity diode lasers and which preserve the advantages of this laser concept. Three different configurations are discussed in this article. The three types of miniaturized external cavity diode laser systems achieve power values of more than 50 mW within the 1.4 μm water vapor absorption band with excellent side-mode suppression and linewidth below 100 kHz. Typical features outstand with respect to other type of laser systems which are of extended use such as DFB laser diodes. The higher output power and the lower linewidth will enable a higher sensitivity and resolution for a wide range of applications.

Developments in lead-salt diode lasers

International Nuclear Information System (INIS)

Partin, D.L.

1985-01-01

Lead-chalcogenide diode lasers are useful as mid-infrared sources (2-1/2 <λ<30 μm), but have generally operated CW below 100K. A new materials system, PbEuSeTe, has been used to fabricate diode lasers operating from 10K (at 6.5 μm wavelength) up to 174K CW (at 4.4 μm) and up to 280K pulsed (at 3.8 μm). These are large optical cavity single quantum well devices grown by molecular beam epitaxy. These are currently the highest diode laser operating temperatures ever achieved at these wavelengths to our knowledge. Single ended output powers as high as 1 mW single mode (5 mW multimode) have been attained from mesa stripe diodes. These characteristics make these devices attractive for long wavelength fiber optic sensor/communications systems. The performance limits of these devices are discussed

Intense pulsed light-ion beam generated by planar type self-magnetically insulated diode

International Nuclear Information System (INIS)

Yoshikawa, T.; Masugata, K.; Ito, M.; Matsui, M.; Yatsui, K.

1984-01-01

New type of ion diode named ''Planar Type Self-Magnetically Insulated Diode'' (PSID) has been developed. By using a 1.5-mm-thick-polyethylene sheet as an anode surface, we have obtained Vsub(d) (diode voltage) -- 886 kV, Isub(d) (diode current) -- 180 kA, and Isub(i) (net ion current) -- 52 kA, yielding the diode efficiency of ion production to be -- 30 %. Multiple-shots operation (more than 40 shots) has been possible with good reproducibility in such a relatively high powers above. (author)

Respiratory complications after diode-laser-assisted tonsillotomy.

Science.gov (United States)

Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

2014-08-01

Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

High voltage, high power operation of the plasma erosion opening switch

International Nuclear Information System (INIS)

Neri, J.M.; Boller, J.R.; Ottinger, P.F.; Weber, B.V.; Young, F.C.

1987-01-01

A Plasma Erosion Opening Switch (PEOS) is used as the opening switch for a vacuum inductive storage system driven by a 1.8-MV, 1.6-TW pulsed power generator. A 135-nH vacuum inductor is current charged to ∼750 kA in 50 ns through the closed PEOS which then opens in <10 ns into an inverse ion diode load. Electrical diagnostics and nuclear activations from ions accelerated in the diode yield a peak load voltage (4.25 MV) and peak load power (2.8 TW) that are 2.4 and 1.8 times greater than ideal matched load values for the same generator pulse

High voltage high brightness electron accelerators with MITL voltage adder coupled to foilless diodes

International Nuclear Information System (INIS)

Mazarakis, M.G.; Poukey, J.W.; Frost, C.A.; Shope, S.L.; Halbleib, J.A.; Turman, B.N.

1993-01-01

During the last ten years the authors have extensively studied the physics and operation of magnetically-immersed electron foilless diodes. Most of these sources were utilized as injectors to high current, high energy linear induction accelerators such as those of the RADLAC family. Recently they have experimentally and theoretically demonstrated that foilless diodes can be successfully coupled to self-magnetically insulated transmission line voltage adders to produce very small high brightness, high definition (no halo) electron beams. The RADLAC/SMILE experience opened the path to a new approach in high brightness, high energy induction accelerators. There is no beam drifting through the device. The voltage addition occurs in a center conductor, and the beam is created at the high voltage end in an applied magnetic field diode. This work was motivated by the remarkable success of the HERMES-III accelerator and the need to produce small radius, high energy, high current electron beams for air propagation studies and flash x-ray radiography. In this paper they present experimental results compared with analytical and numerical simulations in addition to design examples of devices that can produce multikiloamp electron beams of as high as 100 MV energies and radii as small as 1 mm

Fine tuning power diodes with irradiation

International Nuclear Information System (INIS)

Tarneja, K.S.; Bartko, J.; Johnson, J.E.

1976-01-01

Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characcteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/tau = 1/tau 0 + K phi, where tau is the desired minority carrier lifetime, tau 0 is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and phi is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 X 10 12 and 5 X 10 13 e/cm 2 , with electron radiation of intensity between 1 and 3 MeV

Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

Science.gov (United States)

Zhang, Liuqi; Yang, Xiaolei; Jiang, Qi; Wang, Pengyang; Yin, Zhigang; Zhang, Xingwang; Tan, Hairen; Yang, Yang (Michael); Wei, Mingyang; Sutherland, Brandon R.; Sargent, Edward H.; You, Jingbi

2017-06-01

Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m-2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date.

Photovoltaic power generation system free of bypass diodes

Science.gov (United States)

Lentine, Anthony L.; Okandan, Murat; Nielson, Gregory N.

2015-07-28

A photovoltaic power generation system that includes a solar panel that is free of bypass diodes is described herein. The solar panel includes a plurality of photovoltaic sub-modules, wherein at least two of photovoltaic sub-modules in the plurality of photovoltaic sub-modules are electrically connected in parallel. A photovoltaic sub-module includes a plurality of groups of electrically connected photovoltaic cells, wherein at least two of the groups are electrically connected in series. A photovoltaic group includes a plurality of strings of photovoltaic cells, wherein a string of photovoltaic cells comprises a plurality of photovoltaic cells electrically connected in series. The strings of photovoltaic cells are electrically connected in parallel, and the photovoltaic cells are microsystem-enabled photovoltaic cells.

Manipulation of the osteoblast response to a Ti 6Al 4V titanium alloy using a high power diode laser

Science.gov (United States)

Hao, L.; Lawrence, J.; Li, L.

2005-07-01

To improve the bone integration of titanium-based implants a high power diode laser (HPDL) was used to modify the material for improved osteoblast cell response. The surface properties of un-treated and HPDL treated samples were characterized. Contact angles for the un-treated and the HPDL modified titanium alloy (Ti-6Al-4V) were determined with selected biological liquids by the sessile drop technique. The analysis revealed that the wettability of the Ti-6Al-4V improved after HPDL laser treatment, indicating that better interaction with the biological liquids occurred. Moreover, an in vitro human fetal osteoblast cells (hFOB 1.19) evaluation revealed a more favourable cell response on the HPDL laser treated Ti-6Al-4V alloy than on either un-treated sample or a mechanically roughened sample. It was consequently determined that the HPDL provides more a controllable and effective technique to improve the biocompatibility of bio-metals.

Design windows of laser fusion power plants and conceptual design of laser-diode pumped slab laser

International Nuclear Information System (INIS)

Kozaki, Y.; Eguchi, T.; Izawa, Y.

1999-01-01

An analysis of the design space available to laser fusion power plants has been carried out, in terms of design key parameters such as target gain, laser energy and laser repetition rate, the number of fusion react ion chambers, and plant size. The design windows of economically attractive laser fusion plants is identified with the constraints of key design parameters and the cost conditions. Especially, for achieving high repetition rate lasers, we have proposed and designed a diode-pumped solid-state laser driver which consists of water-cooled zig-zag path slab amplifiers. (author)

Diode laser-pumped Ho:YLF laser

International Nuclear Information System (INIS)

Hemmati, H.

1987-01-01

The author reports laser action in Ho:YLF at 2.06 μm following optical pumping with a cw diode laser array. Diode laser-pumped Nd-YAG and Ho:YAG have been reported recently. Lasers with a wavelength of 2 μm have medical and optical communication applications. The diode laser light is focused with a 60-mm focal length lens onto the YLF crystal. A high-reflectivity mirror with 100-mm radius of curvature was used as the output coupler. The lasing threshold was at 5 mWof incident power. This is higher than expected considering that a high reflector was used as the output coupler. However, a more uniform cooling of the crystal is expected to lower the lasing threshold. With 100 mW of pump power coupled into the crystal, --20 mW of 2-μm radiation was observed from this unoptimized setup. The 2-μm laser output is highly sensitive to output coupler alignment, YLF crystal temperature, and pump laser wavelength. The 20% optical conversion efficiency achieved in his preliminary measurements is expected to be improved by better crystal cooling, proper matching of laser wavelength to crystal absorption, variations in the concentration of Ho and sensitizers and use of a proper output coupler. A study of the parameters mentioned above and the effect of crystal temperature on the laser output is under way

Diode-pumped glass laser (10 J X 10 HZ) development

International Nuclear Information System (INIS)

Tadashi Kanabe; Toshiyuki Kawashima; Masanobu Yamanaka; Masahiro Nakatsuka; Yasukazu Izawa; Takeshi Kanzaki; Hirofumi Kan; Sadao Nakai

2002-01-01

A high-energy, high beam quality, diode-pumped 1053-nm Nd:phosphate glass laser amplifier has been demonstrated in order to verify the conceptual design of HALNA (High Average-power Laser for Nuclear-fusion Application): a diode-pumped solid-state laser based on a water-cooled zig-zag slab optical geometry. This amplifier yielded 8.5 J output energy per pulse at 0.5 Hz in a 20 ns pulse of two times the diffraction limit beam quality with an optical-to-optical conversion efficiency of 10.9%. The experimental results revealed that the primary requirements for the IFE driver, such as diode-pumping, energy storage and extraction efficiencies, and beam quality have been fulfilled

Theoretical study on the thermal and optical features of a diode side-pumped alkali laser

Science.gov (United States)

Han, Juhong; Liu, Xiaoxu; Wang, Hongyuan; Cai, He; An, Guofei; Zhang, Wei; Wang, You

2018-03-01

As one of the most hopeful candidates to achieve high power performances, a diode-pumped alkali laser (DPAL) has attracted a lot of attention in the last decade. Comparing with a diode end-pumped alkali laser (DEPAL), a diode side-pumped alkali laser (DSPAL) has great potentiality to realize an even-higher output of alkali lasers. However, there are few related researching studies concern DSPAL. In this paper, we introduce a theoretical model to investigate the physical features of a double-directions side-pumped alkali laser. The distributions of the population density, temperature, and absorption power at the cross section of a vapor cell are systematically studied. The analyses should be valuable for design of a steady high-powered DPAL.

Determination on the Coefficient of Thermal Expansion in High-Power InGaN-based Light-emitting Diodes by Optical Coherence Tomography.

Science.gov (United States)

Lee, Ya-Ju; Chou, Chun-Yang; Huang, Chun-Ying; Yao, Yung-Chi; Haung, Yi-Kai; Tsai, Meng-Tsan

2017-10-31

The coefficient of thermal expansion (CTE) is a physical quantity that indicates the thermal expansion value of a material upon heating. For advanced thermal management, the accurate and immediate determination of the CTE of packaging materials is gaining importance because the demand for high-power lighting-emitting diodes (LEDs) is currently increasing. In this study, we used optical coherence tomography (OCT) to measure the CTE of an InGaN-based (λ = 450 nm) high-power LED encapsulated in polystyrene resin. The distances between individual interfaces of the OCT images were observed and recorded to derive the instantaneous CTE of the packaged LED under different injected currents. The LED junction temperature at different injected currents was established with the forward voltage method. Accordingly, the measured instantaneous CTE of polystyrene resin varied from 5.86 × 10 -5  °C -1 to 14.10 × 10 -5  °C -1 in the junction temperature range 25-225 °C and exhibited a uniform distribution in an OCT scanning area of 200 × 200 μm. Most importantly, this work validates the hypothesis that OCT can provide an alternative way to directly and nondestructively determine the spatially resolved CTE of the packaged LED device, which offers significant advantages over traditional CTE measurement techniques.

700 W blue fiber-coupled diode-laser emitting at 450 nm

Science.gov (United States)

Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

2018-02-01

A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

Compact laser-diode-based femtosecond sources

International Nuclear Information System (INIS)

Brown, C T A; Cataluna, M A; Lagatsky, A A; Rafailov, E U; Agate, M B; Leburn, C G; Sibbett, W

2004-01-01

This paper describes the development of compact femtosecond laser systems that are capable of being directly pumped by laser diodes or are based directly on laser diodes. The paper demonstrates the latest results in a highly efficient vibronic based gain medium and a diode-pumped Yb:KYW laser is reported that has a wall plug efficiency >14%. A Cr 4+ :YAG oscillator is described that generates transform-limited pulses of 81 fs duration at a pulse repetition frequency of >4 GHz. The development of Cr 3+ :LiSAF lasers that can be operated using power supplies based on batteries is briefly discussed. We also present a summary of work being carried out on the generation of fs-pulses from laser diodes and discuss the important issues in this area. Finally, we outline results obtained on the generation of pulses as short as 550 fs directly from a two-section quantum dot laser without any external pulse compression

High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

Science.gov (United States)

Wang, Gunuk; Lauchner, Adam C; Lin, Jian; Natelson, Douglas; Palem, Krishna V; Tour, James M

2013-09-14

An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Efficient generation of 3.9 W of diffraction-limited green light with spectrally combined tapered diode lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Andersen, Peter E.

We propose an efficient concept increasing the power of diode laser systems in the visible spectral range. In comparison with second harmonic generation of single emitters, spectral beam combining with subsequent sum-frequency generation enhances the available power significantly. Combining two...... 1060 nm tapered diode lasers, we achieve a 2.5-3.2 fold increase of green light with a maximum power of 3.9 Watts in a diffraction-limited beam. At this level, diode lasers have a high application potential, for example, within the biomedical field. In order to enhance the power even further, our...

Operation and maintenance manual for diode performance analysis program DIODE0

International Nuclear Information System (INIS)

Boyer, W.B.

1977-03-01

This program computes diode performance parameters for the e beam fusion accelerators HYDRA, PROTO I and PROTO II. The program works in conjunction with other programs in the data acquisition facility library. It reads the input data produced by the Tekronix R7012 Transient Digitizers off the disc. It then computes and plots the diode corrected voltages, impedances, powers, and energies

An online Vce measurement and temperature estimation method for high power IGBT module in normal PWM operation

DEFF Research Database (Denmark)

Ghimire, Pramod; de Vega, Angel Ruiz; Beczkowski, Szymon

2014-01-01

An on-state collector-emitter voltage (Vce) measurement and thereby an estimation of average temperature in space for high power IGBT module is presented while power converter is in operation. The proposed measurement circuit is able to measure both high and low side IGBT and anti parallel diode...

Research results for the applications of high power ion beams

International Nuclear Information System (INIS)

Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Zhang Jiasheng; Xu Ri; Peng Jianchang; Ren Shuqing; Li Peng; Yang Li; Huang Jianjun; Zhang Guoguang; Ouyang Xiaoping; Li Hongyu

2003-01-01

The results obtained in the theoretical and experimental studies for the application of high power ion beams in certain areas of nuclear physics and material science are reported. The preliminary experimental results of generating 6-7 MeV quasi-monoenergetic pulsed γ-rays with high power pulsed proton beams striking 19 F target on the Flash II accelerator are presented. By placing the target far enough downstream, the quasi-monoenergetic pulsed γ-rays can be discriminated experimentally from the diode Bremsstrahlung. This article also describes the other applications of high power ion beams and the preliminary experimental and theoretical results in simulation of soft X-ray thermal-mechanical effects, generation of high intense pulsed neutrons, equation of state and shock-wave physics experiments, surface modification and so on

Laser materials processing with diode lasers

OpenAIRE

Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

1996-01-01

Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate the feasibility of using vertical GaN Schottky diodes for high-power rectification...

High power blue LED development using different growth modes

Energy Technology Data Exchange (ETDEWEB)

Lee, Dong S.; Florescu, Doru I.; Ramer, Jeff C.; Merai, Vinod; Parekh, Aniruddh; Begarney, Michael J.; Armour, Eric A. [Veeco TurboDisc Operations, 394 Elizabeth Avenue, Somerset, NJ 08873 (United States); Lu Dong [Veeco TurboDisc Operations, 394 Elizabeth Avenue, Somerset, NJ 08873 (United States); School of Engineering, Rutgers University, Piscataway, NJ 08854 (United States)

2004-09-01

Blue high brightness light emitting diodes (HB-LEDs) have been developed using different growth modes in the active layers. Piezoelectric field engineering improves the optical output power in multiple quantum well (MQW) LEDs by inserting an optimized transitional superlattice (TSL) before the active MQW layers. Within single quantum well (SQW) LEDs, quasi-Quantum Dot (QD) growth for Indium localization has been realized. The SQW LED output power exceeds the strain engineered MQW LEDs. The experimental data indicates that Indium localization enhances overall quantum efficiency and results in increased output power for HB-LEDs. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Development of a high and low impedance diode testing facility at AWE Aldermaston

International Nuclear Information System (INIS)

Sinclair, M.; Aedy, Ch.; Cooper, G.

2005-01-01

To meet the future resolution targets for radiography of hydrodynamic experiments is creating a dedicated Diode Research Facility. To perform low impedance diode research, the X-ray simulator Eros has been acquired. To drive the high impedance diodes the EMU machine will be co-located with Eros. The co-located of machines will facilitate the sharing of plasma and X-ray diagnostics [ru

Ion production and bipolar fluxes in a high-current plasma-filled diode

International Nuclear Information System (INIS)

Ivanenkov, G.V.

1982-01-01

The model and the evolution of behaviour of binary layers (BL) in expanding plasma of high current plasma-filled diode are described. The model estimates ion current and the laws of plasma expansion at the stage of BL intensive growth. The density range (10 12 -10 15 cm -3 ) is determined in which diode impedance growth takes place in connection with BL appearance. The density of ion current at the outlet of diode is 10 A/cm 2

Anode plasma dynamics in the self-magnetic-pinch diode

Directory of Open Access Journals (Sweden)

Nichelle Bruner

2011-02-01

Full Text Available The self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. In high-power operation, the beam electrons desorb contaminants from the anode surface from which positive ions are drawn to the cathode. The counterstreaming electrons and ions establish an equilibrium current. It has long been recognized, however, that expanding electrode plasmas can disrupt this equilibrium and cause rapid reduction of the diode impedance and the radiation pulse. Recently developed numerical techniques, which enable simultaneous modeling of particle currents with 10^{13}  cm^{-3} densities to plasmas of near solid density, are applied to a model of the self-magnetic-pinch diode which includes the formation and evolution of anode surface plasmas. Two mechanisms are shown to cause rapid impedance loss, anode plasma expansion into the anode-cathode (A-K gap, and increased ion space-charge near the cathode surface. The former mechanism dominates for shorter A-K gaps, while the latter dominates for longer gaps. Model results qualitatively reproduce the time-dependent impedances measured for this diode.

Integrated Automotive High-Power LED-Lighting Systems in 3D-MID Technology

NARCIS (Netherlands)

Thomas, W.

2014-01-01

The growing energy consumption of lighting as well as rising luminous efficacies and -fluxes of high-power Light Emitting Diodes (LEDs) have contributed to the widespread use of LEDs in modern lighting systems. One of the most prominent users of the LED-technology is automotive (exterior) lighting.

Integrated power conditioning for laser diode arrays

International Nuclear Information System (INIS)

Hanks, R.L.; Kirbie, H.C.; Newton, M.A.; Farhoud, M.S.

1995-01-01

This compact modulator has demonstated its ability to efficiently and accurately drive a laser diode array. The addition of the crowbar protection circuit is an invaluable addition to the integrated system and is capable of protecting the laser diode array against severe damage. We showed that the correlation between measured data and simulation indicates that our modulator model is valid and can be used as a tool in the design of future systems. The spectrometer measurements that we conducted underline the imprtance of current regulation to stable laser operation

INFLUENCE OF THE ORTHOGONALLY POLARIZED BACK REFLECTIONS ON THE POWER AND RADIATION SPECTRUM OF SUPERLUMINESCENT DIODES

Directory of Open Access Journals (Sweden)

A. B. Mukhtubayev

2015-01-01

Full Text Available We have investigated the back reflections influence on the spectrum for optical radiation source of superluminescent diode type and have provided optimal operating conditions of the radiation source. The feature of the research method is the usage of a fiber polarization controller and an optical mirror coated on the end of an optical fiber. The studies were conducted with two sources of optical radiation: ThorLabs superluminescent diode series S5FC1005SXL and LED module ELED-1550-1-E-9-SM1-FA-CW. It was revealed that at the value of back reflections equal to -13 dB relative to the output power source, a negative impact on power and spectral characteristics of the source with an optical power of 2.3 µW is beginning to appear. It was also confirmed that at the increase of the radiation power by increasing the source pumping current, back reflection influence is exhibiting at a lower level of back reflections. The results obtained need to be considered when designing fiber optic sensors in order to eliminate the effect of back reflections on the sources of optical radiation having been studied in this paper.

Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate prototype vertical GaN Schottky diodes for high-power rectification at W-band. To...

Testing of high current by-pass diodes for the LHC magnet quench protection

International Nuclear Information System (INIS)

Berland, V.; Hagedorn, D.; Rodriguez-Mateos, F.

1996-01-01

Within the framework of the Large Hadron Collider (LHC) R and D program, CERN is performing experiments to establish the current carrying capability of irradiated diodes at liquid Helium temperatures for the superconducting magnet protection. Even if the diodes are degraded by radiation dose and neutron fluence, they must be able to support the by-pass current during a magnet quench and the de-excitation of the superconducting magnet ring. During this discharge, the current in the diode reaches a maximum value up to 13 kA and decreased with an exponential time constant of 100 s. Two sets of 75 mm wafer diameter epitaxial diodes, one irradiated and one non-irradiated, were submitted to this experiment. The irradiated diodes have been exposed to radiation in the accelerator environment up to 20 kGy and then annealed at room temperature. After the radiation exposure the diodes had shown a degradation of forward voltage of 50% which reduced to about 14% after the thermal annealing. During the long duration high current tests, one of the diodes was destroyed and the other two irradiated diodes showed a different behavior compared with non-irradiated diodes

High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

Science.gov (United States)

Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

2014-01-01

A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

High Current Ionic Diode Using Homogeneously Charged Asymmetric Nanochannel Network Membrane.

Science.gov (United States)

Choi, Eunpyo; Wang, Cong; Chang, Gyu Tae; Park, Jungyul

2016-04-13

A high current ionic diode is achieved using an asymmetric nanochannel network membrane (NCNM) constructed by soft lithography and in situ self-assembly of nanoparticles with uniform surface charge. The asymmetric NCNM exhibits high rectified currents without losing a rectification ratio because of its ionic selectivity gradient and differentiated electrical conductance. Asymmetric ionic transport is analyzed with diode-like I-V curves and visualized via fluorescent dyes, which is closely correlated with ionic selectivity and ion distribution according to variation of NCNM geometries.

Seven-laser diode end-pumped Nd

International Nuclear Information System (INIS)

Berger, J.; Welch, D.F.; Streifer, W.; Scifres, D.R.; Smith, J.J.; Hoffman, H.J.; Peisley, D.; Radecki, D.

1988-01-01

End pumping of solid-state lasers by single semiconductor laser diode arrays (LDAs) is efficient, but the maximum pump power is limited by the source brightness and matching the TEM/sub 00/ Nd:YAG cavity mode. To increase the output power from a solid-state Nd:YAG laser, one option is to employ a multiplicity of LDA to provide more pump power than is available from a single source. The authors report herein a 660-mW cw TEM/sub 00/ Nd:YAG laser, end-pumped by seven LDA, with bundled optical fibers coupling the light from each diode to the Nd:YAG rod end. The maximum electrical-to-optical conversion efficiency attained was 4.7% at 560-mW Nd:YAG output power. The LDAs (SDL-2430-C, 100 μm wide) were mounted on separate thermoelectric coolers to tune emission wavelength to the Nd:YAG absorption bands. The diodes were operated at their rated output power (50,000 h mean time to failure). The 110/125-μm diam 0.37-N.A. fibers were butt coupled to the lasers and glued together into a hexagonal close pack. The authors have obtained the highest average power demonstrated to date in the TEM/sub 00/ mode from a Nd:YAG laser, reliably end-pumped by multiple laser diodes with good efficiency

100 years of the physics of diodes

Science.gov (United States)

Zhang, Peng; Valfells, Ágúst; Ang, L. K.; Luginsland, J. W.; Lau, Y. Y.

2017-03-01

The Child-Langmuir Law (CL), discovered a century ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nanoscale quantum diodes and nano gap based plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic-, field-, and photoemission) to the space charge limited state (CL) will be addressed, especially highlighting the important simulation and experimental developments in selected contemporary areas of study. We stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion.

Tomographic Particle Image Velocimetry using Pulsed, High Power LED Volume Illumination

OpenAIRE

Buchmann, N. A.; Willert, C.; Soria, J.

2011-01-01

This paper investigates the use of high-power light emitting diode (LED) illumination in Particle Image Velocimetry (PIV) as an alternative to traditional laser-based illumination. The solid-state LED devices can provide averaged radiant power in excess of 10W and by operating the LEDs with short current pulses, considerably higher than in continuous operation, light pulses of sufficient energy suitable for imaging micron-sized particles can be generated. The feasibility of this LED-based ill...

High-resolution smile measurement and control of wavelength-locked QCW and CW laser diode bars

Science.gov (United States)

Rosenkrantz, Etai; Yanson, Dan; Klumel, Genady; Blonder, Moshe; Rappaport, Noam; Peleg, Ophir

2018-02-01

High-power linewidth-narrowed applications of laser diode arrays demand high beam quality in the fast, or vertical, axis. This requires very high fast-axis collimation (FAC) quality with sub-mrad angular errors, especially where laser diode bars are wavelength-locked by a volume Bragg grating (VBG) to achieve high pumping efficiency in solid-state and fiber lasers. The micron-scale height deviation of emitters in a bar against the FAC lens causes the so-called smile effect with variable beam pointing errors and wavelength locking degradation. We report a bar smile imaging setup allowing FAC-free smile measurement in both QCW and CW modes. By Gaussian beam simulation, we establish optimum smile imaging conditions to obtain high resolution and accuracy with well-resolved emitter images. We then investigate the changes in the smile shape and magnitude under thermal stresses such as variable duty cycles in QCW mode and, ultimately, CW operation. Our smile measurement setup provides useful insights into the smile behavior and correlation between the bar collimation in QCW mode and operating conditions under CW pumping. With relaxed alignment tolerances afforded by our measurement setup, we can screen bars for smile compliance and potential VBG lockability prior to assembly, with benefits in both lower manufacturing costs and higher yield.

Coherent combining of high brightness tapered lasers in master oscillator power amplifier configuration

Science.gov (United States)

Albrodt, P.; Hanna, M.; Moron, F.; Decker, J.; Winterfeldt, M.; Blume, G.; Erbert, G.; Crump, P.; Georges, P.; Lucas-Leclin, G.

2018-02-01

Improved diode laser beam combining techniques are in strong demand for applications in material processing. Coherent beam combining (CBC) is the only combining approach that has the potential to maintain or even improve all laser properties, and thus has high potential for future systems. As part of our ongoing studies into CBC of diode lasers, we present recent progress in the coherent superposition of high-power single-pass tapered laser amplifiers. The amplifiers are seeded by a DFB laser at λ = 976 nm, where the seed is injected into a laterally single-mode ridge-waveguide input section. The phase pistons on each beam are actively controlled by varying the current in the ridge section of each amplifier, using a sequential hill-climbing algorithm, resulting in a combined beam with power fluctuations of below 1%. The currents into the tapered sections of the amplifiers are separately controlled, and remain constant. In contrast to our previous studies, we favour a limited number of individual high-power amplifiers, in order to preserve a high extracted power per emitter in a simple, low-loss coupling arrangement. Specifically, a multi-arm interferometer architecture with only three devices is used, constructed using 6 mm-long tapered amplifiers, mounted junction up on C-mounts, to allow separate contact to single mode and amplifier sections. A maximum coherently combined power of 12.9 W is demonstrated in a nearly diffraction-limited beam, corresponding to a 65% combining efficiency, with power mainly limited by the intrinsic beam quality of the amplifiers. Further increased combined power is currently sought.

A two-stage ceramic tile grout sealing process using a high power diode laser—Grout development and materials characteristics

Science.gov (United States)

Lawrence, J.; Li, L.; Spencer, J. T.

1998-04-01

Work has been conducted using a 60 Wcw high power diode laser (HPDL) in order to determine the feasibility and characteristics of sealing the void between adjoining ceramic tiles with a specially developed grout material having an impermeable enamel surface glaze. A two-stage process has been developed using a new grout material which consists of two distinct components: an amalgamated compound substrate and a glazed enamel surface; the amalgamated compound seal providing a tough, heat resistant bulk substrate, whilst the enamel provides an impervious surface. HPDL processing has resulted in crack free seals produced in normal atmospheric conditions. The basic process phenomena are investigated and the laser effects in terms of seal morphology, composition and microstructure are presented. Also, the resultant heat affects are analysed and described, as well as the effects of the shield gases, O 2 and Ar, during laser processing. Tiles were successfully sealed with power densities as low as 500 W/cm 2 and at rates up to 600 mm/min. Contact angle measurements revealed that due to the wettability characteristics of the amalgamated oxide compound grout (AOCG), laser surface treatment was necessary in order to alter the surface from a polycrystalline to a semi-amorphous structure, thus allowing the enamel to adhere. Bonding of the enamel to the AOCG and the ceramic tiles was identified as being principally due to van der Waals forces, and on a very small scale, some of the base AOCG material dissolving into the glaze.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

International Nuclear Information System (INIS)

Deri, R.J.

2011-01-01

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

Optical pumping of Rb by Ti:Sa laser and high-power laser diode

Czech Academy of Sciences Publication Activity Database

Buchta, Zdeněk; Rychnovský, Jan; Lazar, Josef

2006-01-01

Roč. 8, č. 1 (2006), s. 350-354 ISSN 1454-4164 R&D Projects: GA AV ČR IAA1065303; GA ČR GA102/04/2109 Institutional research plan: CEZ:AV0Z20650511 Keywords : optical pumping * Ti:Sa laser * laser diode * emission linewidth * spectroscopy * laser frequency stabilization Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.106, year: 2006

Effect of defects on electrical properties of 4H-SiC Schottky diodes

International Nuclear Information System (INIS)

Ben Karoui, M.; Gharbi, R.; Alzaied, N.; Fathallah, M.; Tresso, E.; Scaltrito, L.; Ferrero, S.

2008-01-01

Most of power electronic circuits use power semiconductor switching devices which ideally present infinite resistance when off, zero resistance when on, and switch instantaneously between those two states. Switches and rectifiers are key components in power electronic systems, which cover a wide range of applications, from power transmission to control electronics and power supplies. Typical power switching devices such as diodes, thyristors, and transistors are based on a monocrystalline silicon semiconductor or silicon carbide. Silicon is less expensive, more widely used, and a more versatile processing material than silicon carbide. The silicon carbide (SiC) has properties that allow devices with high power voltage rating and high operating temperatures. The technology overcomes some crystal growth obstacles, by using the hydrogen in the fabrication of 4H-SiC wafers. The presence of structural defects on 4H-SiC wafers was shown by different techniques such as optical microscopy and scanning electron microscopy. The presence of different SiC polytypes inclusions was found by Raman spectroscopy. Schottky diodes were realized on investigated wafers in order to obtain information about the correlation between those defects and electrical properties of the devices. The diodes with voltage breakdown as 600 V and ideality factor as 1.05 were obtained and characterized after packaging

Efficient High Power Ho,Tm:GdVO4 Laser

International Nuclear Information System (INIS)

Wang Yue-Zhu; Zhu Guo-Li; Ju You-Lun; Yao Bao-Quan

2011-01-01

We report a 22.3 W cw diode-pumped cryogenic Ho(0.5at.%),Tm(at.5%):GdVO 4 laser at a wavelength of 2.05 μm. It is pumped by two fiber-coupled laser diodes with a fiber core diameter of 0.4 mm, both of which provide 42 W pump power near 802 nm. A cw output power of 22.3 W was obtained at the pump power of 51.0 W, corresponding to an optical-to-optical conversion efficiency of 43.7% when the ratio of the pump beam to oscillating laser beam in the crystal was ∼1.33:1. The M 2 factor was found to be 2.0 under an output power of 16.5 W. (fundamental areas of phenomenology(including applications))

High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane.

Science.gov (United States)

Cho, Minkyu; Yun, Jeonghoon; Kwon, Donguk; Kim, Kyuyoung; Park, Inkyu

2018-04-18

High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H 2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H 2 sensitivity (Δ I/ I 0 > 700-0.5% H 2 concentrations) and fast response time (τ 10-90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.

Operational characteristics and analysis of the immersed-Bz diode on RITS-3.

Energy Technology Data Exchange (ETDEWEB)

Bruner, Nichelle " Nicki" ; Oliver, Bryan Velten; Portillo, Salvador; Puetz, Elizabeth A.; Johnston, Mark D.; Welch, Dale Robert; Rose, David Vincent; Cooper, G.M. (AWE, Aldermaston, Reading, United Kingdom); McLean, John (AWE, Aldermaston, Reading, United Kingdom); Rovang, Dean Curtis; Maenchen, John Eric

2006-02-01

The immersed-B{sub z} diode is being developed as a high-brightness, flash x-ray radiography source. This diode is a foil-less electron-beam diode with a long, thin, needle-like cathode inserted into the bore of a solenoid. The solenoidal magnetic field guides the electron beam emitted from the cathode to the anode while maintaining a small beam radius. The electron beam strikes a thin, high-atomic-number anode and produces bremsstrahlung. We report on an extensive series of experiments where an immersed-B{sub z} diode was fielded on the RITS-3 pulsed power accelerator, a 3-cell inductive voltage generator that produced peak voltages between 4 and 5 MV, {approx}140 kA of total current, and power pulse widths of {approx}50 ns. The diode is a high impedance device that, for these parameters, nominally conducts {approx}30 kA of electron beam current. Diode operating characteristics are presented and two broadly characterized operating regimes are identified: a nominal operating regime where the total diode current is characterized as classically bipolar and an anomalous impedance collapse regime where the total diode current is in excess of the bipolar limit and up to the full accelerator current. The operating regimes are approximately separated by cathode diameters greater than {approx}3 mm for the nominal regime and less than {approx} 3 mm for the anomalous impedance collapse regime. This report represents a compilation of data taken on RITS-3. Results from key parameter variations are presented in the main body of the report and include cathode diameter, anode-cathode gap, and anode material. Results from supporting parameter variations are presented in the appendices and include magnetic field strength, prepulse, pressure and accelerator variations.

Operational characteristics and analysis of the immersed-Bz diode on RITS-3

International Nuclear Information System (INIS)

Bruner, Nichelle

2006-01-01

The immersed-B z diode is being developed as a high-brightness, flash x-ray radiography source. This diode is a foil-less electron-beam diode with a long, thin, needle-like cathode inserted into the bore of a solenoid. The solenoidal magnetic field guides the electron beam emitted from the cathode to the anode while maintaining a small beam radius. The electron beam strikes a thin, high-atomic-number anode and produces bremsstrahlung. We report on an extensive series of experiments where an immersed-B z diode was fielded on the RITS-3 pulsed power accelerator, a 3-cell inductive voltage generator that produced peak voltages between 4 and 5 MV, ∼140 kA of total current, and power pulse widths of ∼50 ns. The diode is a high impedance device that, for these parameters, nominally conducts ∼30 kA of electron beam current. Diode operating characteristics are presented and two broadly characterized operating regimes are identified: a nominal operating regime where the total diode current is characterized as classically bipolar and an anomalous impedance collapse regime where the total diode current is in excess of the bipolar limit and up to the full accelerator current. The operating regimes are approximately separated by cathode diameters greater than ∼3 mm for the nominal regime and less than ∼ 3 mm for the anomalous impedance collapse regime. This report represents a compilation of data taken on RITS-3. Results from key parameter variations are presented in the main body of the report and include cathode diameter, anode-cathode gap, and anode material. Results from supporting parameter variations are presented in the appendices and include magnetic field strength, prepulse, pressure and accelerator variations

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Energy Technology Data Exchange (ETDEWEB)

Inoue, Shin-ichiro, E-mail: s-inoue@nict.go.jp [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Naoki, Tamari [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan); Kinoshita, Toru; Obata, Toshiyuki; Yanagi, Hiroyuki [Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan)

2015-03-30

Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.

High-power and highly reliable 638-nm band BA-LD for CW operation

Science.gov (United States)

Nishida, Takehiro; Kuramoto, Kyosuke; Abe, Shinji; Kusunoki, Masatsugu; Miyashita, Motoharu; Yagi, Tetsuya

2018-02-01

High-power laser diodes (LDs) are strongly demanded as light sources of display applications. In multiple spatial light modulator-type projectors or liquid crystal displays, the light source LDs are operated under CW condition. The high-power 638-nm band broad-area LD for CW operation was newly developed. The LD consisted of two stripes with each width of 75 μm to reduce both an optical power density at a front facet and a threshold current. The newly improved epitaxial technology was also applied to the LD to suppress an electron overflow from an active layer. The LD showed superior output characteristics, such as output of 1.77 W at case temperature of 55 °C with wall plug efficiency (WPE) of 23%, which was improved by 40% compared with the current product. The peak WPE at 25 °C reached 40.6% under the output power of 2.37 W, CW, world highest.

Diode-side-pumped intracavity frequency-doubled Nd:YAG/BaWO4 Raman laser generating average output power of 3.14 W at 590 nm.

Science.gov (United States)

Li, Shutao; Zhang, Xingyu; Wang, Qingpu; Zhang, Xiaolei; Cong, Zhenhua; Zhang, Huaijin; Wang, Jiyang

2007-10-15

We report a linear-cavity high-power all-solid-state Q-switched yellow laser. The laser source comprises a diode-side-pumped Nd:YAG module that produces 1064 nm fundamental radiation, an intracavity BaWO(4) Raman crystal that generates a first-Stokes laser at 1180 nm, and a KTP crystal that frequency doubles the first-Stokes laser to 590 nm. A convex-plane cavity is employed in this configuration to counteract some of the thermal effect caused by high pump power. An average output power of 3.14 W at 590 nm is obtained at a pulse repetition frequency of 10 kHz.

Multifunctional hybrid diode: Study of photoresponse, high responsivity, and charge injection mechanisms

Science.gov (United States)

Singh, Jitendra; Singh, R. G.; Gautam, Subodh K.; Singh, Fouran

2018-05-01

A multifunctional hybrid heterojunction diode is developed on porous silicon and its current density-voltage characteristics reveal a good rectification ratio along with other superior parameters such as ideality factor, barrier height and series resistance. The diode also functions as an efficient photodiode to manifest high photosensitivity with high responsivity under illumination with broadband solar light, UV light, and green light. The diode is also carefully scrutinized for its sensitivity and repeatability over many cycles under UV and green light and is found to have a quick response and extremely fast recovery times. The notable responsivity is attributed to the generation of high density of excitons in the depletion region by the absorption of incident photons and their separation by an internal electric field besides an additional photocurrent due to the charging of polymer chains. The mechanisms of generation, injection and transport of charge carriers are explained by developing a schematic energy band diagram. The transport phenomenon of carriers is further investigated from room temperature down to a very low temperature of 10 K. An Arrhenius plot is made to determine the Richardson constant. Various diode parameters as mentioned above are also determined and the dominance of the transport mechanism of charge carriers in different temperature regimes such as diffusion across the junction and/or quantum tunneling through the barriers are explained. The developed multifunction heterojunction hybrid diodes have implications for highly sensitive photodiodes in the UV and visible range of electromagnetic spectrum that can be very promising for efficient optoelectronic devices.

Compact pulse topology for adjustable high-voltage pulse generation using an SOS diode

NARCIS (Netherlands)

Driessen, A.B.J.M.; Heesch, van E.J.M.; Huiskamp, T.; Beckers, F.J.C.M.; Pemen, A.J.M.

2014-01-01

In this paper, a compact circuit topology is presented for pulsed power generation with a semiconductor opening switch (SOS). Such circuits require the generation of a fast forward current through the diode, followed by a reverse current that activates the recovery process. In general, magnetic

All-solid-state cw frequency-doubling Nd:YLiF4/LBO blue laser with 4.33 W output power at 454 nm under in-band diode pumping at 880 nm.

Science.gov (United States)

Lü, Yanfei; Zhang, Xihe; Cheng, Weibo; Xia, Jing

2010-07-20

We generated efficient blue laser output at 454 nm by intracavity frequency doubling of a continuous-wave (cw) diode-pumped Nd:YLiF(4) (Nd:YLF) laser at 908 nm based on the (4)F(3/2)-(4)I(9/2) transition. With 32.8 W of incident pump power at 880 nm and the frequency-doubling crystal LiB(3)O(5), a level as high as 4.33 W of cw output power at 454 nm is achieved, corresponding to an optical conversion efficiency of 13.2% with respect to the incident pump power. To the best of our knowledge, this is the first blue laser at 454 nm generated by intracavity frequency doubling of a diode-pumped Nd:YLF.

Quasi-CW diode-pumped self-starting adaptive laser with self-Q-switched output.

Science.gov (United States)

Smith, G; Damzen, M J

2007-05-14

An investigation is made into a quasi-CW (QCW) diode-pumped holographic adaptive laser utilising an ultra high gain (approximately 10(4)) Nd:YVO(4) bounce amplifier. The laser produces pulses at 1064 nm with energy approximately 0.6 mJ, duration laser configuration, the output was amplified to obtain pulses of approximately 5.6 mJ energy, approximately 7 ns duration and approximately 1 MW peak power. The output spatial quality is also M(2)diode-pumped self-adaptive holographic lasers can provide a useful source of high peak power, short duration pulses with excellent spatial quality and narrow linewidth spectrum.

Experimental progress on virtual-cathode very high power microwave source development

International Nuclear Information System (INIS)

Fazio, M.V.; Hoeberling, R.F.

1987-01-01

The evolution of rf accelerator technology toward high-power, high-current, low-emittance beams produces an ever-increasing demand for efficient, very high power microwave sources. The present klystron technology has performed very well but is not expected to produce reliable gigawatt peak-power units in the 1- to 10-GHz regime. Further major advancements must involve other types of sources. The reflexing electron sources can produce microwave powers at the gigawatt level and have demonstrated operation from 800 MHz to 40 GHz. Pulse length appears to be limited by electron-beam diode closure, and reflexing electron devices have been operated in a repetitively pulsed mode. An experiment is under way to investigate concepts to stabilize the frequency of the virtual cathode source. If one can successfully frequency and phase lock this source to an external signal, then this source can operate as a very high power microwave amplifier making it practical for accelerator applications. The progress on an experiment to test these concepts will be discussed

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

Directory of Open Access Journals (Sweden)

Dario Grgić

2012-10-01

Full Text Available This work presents the optimization of antenna captured low power radio frequency (RF to direct current (DC power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at −30 dBm antenna input power. Additionally, a wireless harvester (rectenna is built and tested for receiving range performance.

Optimization of passive low power wireless electromagnetic energy harvesters.

Science.gov (United States)

Nimo, Antwi; Grgić, Dario; Reindl, Leonhard M

2012-10-11

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at -30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance.

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

Science.gov (United States)

Nimo, Antwi; Grgić, Dario; Reindl, Leonhard M.

2012-01-01

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at −30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance. PMID:23202014

Vortex Diode Analysis and Testing for Fluoride Salt-Cooled High-Temperature Reactors

International Nuclear Information System (INIS)

Yoder, Graydon L. Jr.; Elkassabgi, Yousri M.; De Leon, Gerardo I.; Fetterly, Caitlin N.; Ramos, Jorge A.; Cunningham, Richard Burns

2012-01-01

Fluidic diodes are presently being considered for use in several fluoride salt-cooled high-temperature reactor designs. A fluidic diode is a passive device that acts as a leaky check valve. These devices are installed in emergency heat removal systems that are designed to passively remove reactor decay heat using natural circulation. The direct reactor auxiliary cooling system (DRACS) uses DRACS salt-to-salt heat exchangers (DHXs) that operate in a path parallel to the core flow. Because of this geometry, under normal operating conditions some flow bypasses the core and flows through the DHX. A flow diode, operating in reverse direction, is-used to minimize this flow when the primary coolant pumps are in operation, while allowing forward flow through the DHX under natural circulation conditions. The DRACSs reject the core decay heat to the environment under loss-of-flow accident conditions and as such are a reactor safety feature. Fluidic diodes have not previously been used in an operating reactor system, and therefore their characteristics must be quantified to ensure successful operation. This report parametrically examines multiple design parameters of a vortex-type fluidic diode to determine the size of diode needed to reject a particular amount of decay heat. Additional calculations were performed to size a scaled diode that could be tested in the Oak Ridge National Laboratory Liquid Salt Flow Loop. These parametric studies have shown that a 152.4 mm diode could be used as a test article in that facility. A design for this diode is developed, and changes to the loop that will be necessary to test the diode are discussed. Initial testing of a scaled flow diode has been carried out in a water loop. The 150 mm diode design discussed above was modified to improve performance, and the final design tested was a 171.45 mm diameter vortex diode. The results of this testing indicate that diodicities of about 20 can be obtained for diodes of this size. Experimental

Efficient concept for generation of diffraction-limited green light by sum-frequency generation of spectrally combined tapered diode lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Hasler, Karl-Heinz

2012-01-01

In order to increase the power of visible diode laser systems in an efficient manner, we propose spectral beam combining with subsequent sum-frequency generation. We show that this approach, in comparison with second harmonic generation of single emitters, can enhance the available power signific......In order to increase the power of visible diode laser systems in an efficient manner, we propose spectral beam combining with subsequent sum-frequency generation. We show that this approach, in comparison with second harmonic generation of single emitters, can enhance the available power...... significantly. By combining two distributed Bragg reflector tapered diode lasers we achieve a 2.5–3.2 fold increase in power and a maximum of 3.9 W of diffraction-limited green light. At this power level, green diode laser systems have a high application potential, e.g., within the biomedical field. Our concept...

Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

KAUST Repository

Zhao, Chao

2016-07-28

A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley–Read–Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.

Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

KAUST Repository

Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif

2017-01-01

For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

KAUST Repository

Khan, A.A.

2017-07-27

For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

High power, repetitive stacked Blumlein pulse generators

Energy Technology Data Exchange (ETDEWEB)

Davanloo, F; Borovina, D L; Korioth, J L; Krause, R K; Collins, C B [Univ. of Texas at Dallas, Richardson, TX (United States). Center for Quantum Electronics; Agee, F J [US Air Force Phillips Lab., Kirtland AFB, NM (United States); Kingsley, L E [US Army CECOM, Ft. Monmouth, NJ (United States)

1997-12-31

The repetitive stacked Blumlein pulse power generators developed at the University of Texas at Dallas consist of several triaxial Blumleins stacked in series at one end. The lines are charged in parallel and synchronously commuted with a single switch at the other end. In this way, relatively low charging voltages are multiplied to give a high discharge voltage across an arbitrary load. Extensive characterization of these novel pulsers have been performed over the past few years. Results indicate that they are capable of producing high power waveforms with rise times and repetition rates in the range of 0.5-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap, or photoconductive switch. The progress in the development and use of stacked Blumlein pulse generators is reviewed. The technology and the characteristics of these novel pulsers driving flash x-ray diodes are discussed. (author). 4 figs., 5 refs.

Highly modular high-brightness diode laser system design for a wide application range

Science.gov (United States)

Fritsche, Haro; Kruschke, Bastian; Koch, Ralf; Ferrario, Fabio; Kern, Holger; Pahl, Ullrich; Ehm, Einar; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang

2015-03-01

For an economic production it is important to serve as many applications as possible while keeping the product variations minimal. We present our modular laser design, which is based on single emitters and various combining technics. In a first step we accept a reduction of the very high brightness of the single emitters by vertical stacking. Those emitters can be wavelength stabilized by an external resonator, providing the very same feedback to each of those laser diodes which leads to an output power of about 100W with BPP of BPP. These "500W building blocks" are consequently designed in a way that without any system change new wavelengths can be implemented by only exchanging parts but without change of the production process. This design principal offers the option to adapt the wavelength of those blocks to any applications, from UV, visible into the far IR. From laser pumping and scientific applications to materials processing such as cutting and welding of copper aluminum or steel and also medical application. Operating at wavelengths between 900 nm and 1100 nm, these systems are mainly used in cutting and welding, but the technology can also be adapted to other wavelength ranges, such as 793 nm and 1530 nm. Around 1.5 μm the diodes are already successfully used for resonant pumping of Erbium lasers.[1] Furthermore, the fully integrated electronic concept allows addressing further applications, as it is capable of very short μs pulses up to cw mode operation by simple software commands.

Simulations of Large-Area Electron Beam Diodes

Science.gov (United States)

Swanekamp, S. B.; Friedman, M.; Ludeking, L.; Smithe, D.; Obenschain, S. P.

1999-11-01

Large area electron beam diodes are typically used to pump the amplifiers of KrF lasers. Simulations of large-area electron beam diodes using the particle-in-cell code MAGIC3D have shown the electron flow in the diode to be unstable. Since this instability can potentially produce a non-uniform current and energy distribution in the hibachi structure and lasing medium it can be detrimental to laser efficiency. These results are similar to simulations performed using the ISIS code.(M.E. Jones and V.A. Thomas, Proceedings of the 8^th) International Conference on High-Power Particle Beams, 665 (1990). We have identified the instability as the so called ``transit-time" instability(C.K. Birdsall and W.B. Bridges, Electrodynamics of Diode Regions), (Academic Press, New York, 1966).^,(T.M. Antonsen, W.H. Miner, E. Ott, and A.T. Drobot, Phys. Fluids 27), 1257 (1984). and have investigated the role of the applied magnetic field and diode geometry. Experiments are underway to characterize the instability on the Nike KrF laser system and will be compared to simulation. Also some possible ways to mitigate the instability will be presented.

High power laser source for space applications. Phase 1 study: Executive summary

Science.gov (United States)

1986-07-01

A study to design a high power laser diode, to manufacture samples, to test them, and to identify the problems raised by the manufacture of such power sources in order to evaluate the effort required to overcome the difficulties in view of a component qualification was initiated. Theoretical modeling, manufacturing and test of samples, and environmental evaluation were completed. To obtain 200 mW monomode, a reversed CSP structure manufactured by chemical vapor deposition is recommended.

Velocity spread of REB generated by high current diode

International Nuclear Information System (INIS)

Vrba, P.

1994-05-01

A theoretical analysis and numerical simulations of the Relativistic Electron Beam (REB) generation in a high current diode immersed in an external magnetic field were performed. The calculations confirmed the generated beam to be homogeneous and monoenergetic in a broad central region. In the case of a cylindrical diode the mixing of electron trajectories was only observed in a narrow peripheral beam region. The angle between particle trajectories and the external longitudinal magnetic field varies chaotically form 0 to -25 deg. This phenomenon suppresses the excitation of the two-stream instability excited by REB in a plasma column. (author) 2 tabs., 12 figs., 7 refs

Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks

International Nuclear Information System (INIS)

Bouangeune, Daoheung; Lee, Yeji; Cho, Jaehee; Shim, Kyuhwan; Choi, Cheljong; Choi, Sangsik; Cho, Deokho

2014-01-01

Transient voltage suppressor (TVS) diodes were fabricated using low-temperature epitaxy technology and were employed to improve the electrostatic discharge (ESD) strength of GaN light emitting diodes (LEDs). The ESD performance and the protection capability of the TVS diodes were investigated using various ESD simulators of the human body model (HBM), the IEC (International Electrotechnical Commission) 61000-4-2 (IEC), and a transmission line pulse (TLP) analysis. According to the IEC, the manufactured TVS diode could withstand in excess of ±30 kV without any degradation in the I-V characteristics; meanwhile, the GaN LED itself exhibited catastrophic degradation caused by weak ESD power. The GaN LED assembled with the TVS diode had improved ESD robustness from ±3.8 kV to ±8 kV according to the HBM, from ±1.2 kV to > ±30 kV according to the IEC, and from 4.3 A to > ±30 A according to the TLP analysis. Furthermore, its performance was maintained perfect I-V manner with negligible changes in radiant power, leakage current and breakdown voltage up to the limit of the ESD simulators. Namely, the manufactured TVS diodes were effective in the protection of sensitive GaN LEDs from very strong ESD shocks.

Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks

Energy Technology Data Exchange (ETDEWEB)

Bouangeune, Daoheung; Lee, Yeji; Cho, Jaehee; Shim, Kyuhwan; Choi, Cheljong [Chonbuk National University, Jeonju (Korea, Republic of); Choi, Sangsik; Cho, Deokho [Sigetronics, Inc., Jeonju (Korea, Republic of)

2014-10-15

Transient voltage suppressor (TVS) diodes were fabricated using low-temperature epitaxy technology and were employed to improve the electrostatic discharge (ESD) strength of GaN light emitting diodes (LEDs). The ESD performance and the protection capability of the TVS diodes were investigated using various ESD simulators of the human body model (HBM), the IEC (International Electrotechnical Commission) 61000-4-2 (IEC), and a transmission line pulse (TLP) analysis. According to the IEC, the manufactured TVS diode could withstand in excess of ±30 kV without any degradation in the I-V characteristics; meanwhile, the GaN LED itself exhibited catastrophic degradation caused by weak ESD power. The GaN LED assembled with the TVS diode had improved ESD robustness from ±3.8 kV to ±8 kV according to the HBM, from ±1.2 kV to > ±30 kV according to the IEC, and from 4.3 A to > ±30 A according to the TLP analysis. Furthermore, its performance was maintained perfect I-V manner with negligible changes in radiant power, leakage current and breakdown voltage up to the limit of the ESD simulators. Namely, the manufactured TVS diodes were effective in the protection of sensitive GaN LEDs from very strong ESD shocks.