WorldWideScience

Sample records for high photoluminescence quantum

  1. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...

  2. Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

    Science.gov (United States)

    Reshchikov, M. A.; Willyard, A. G.; Behrends, A.; Bakin, A.; Waag, A.

    2011-10-01

    We report on the fabrication of GaN co-doped with silicon and zinc by metalorganic vapor phase epitaxy and a detailed study of photoluminescence in this material. We observe an exceptionally high absolute internal quantum efficiency of blue photoluminescence in GaN:Zn,Si. The value of 0.93±0.04 has been obtained from several approaches based on rate equations.

  3. High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites.

    Science.gov (United States)

    Sutter-Fella, Carolin M; Li, Yanbo; Amani, Matin; Ager, Joel W; Toma, Francesca M; Yablonovitch, Eli; Sharp, Ian D; Javey, Ali

    2016-01-13

    Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH3NH3PbI3-xBrx perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ Eg ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells.

  4. Photoluminescence under high-electric field of PbS quantum dots

    Directory of Open Access Journals (Sweden)

    B. Ullrich

    2012-12-01

    Full Text Available The effect of a laterally applied electric field (≤10 kV/cm on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.

  5. Highly Luminescent Phase-Stable CsPbI3 Perovskite Quantum Dots Achieving Near 100% Absolute Photoluminescence Quantum Yield.

    Science.gov (United States)

    Liu, Feng; Zhang, Yaohong; Ding, Chao; Kobayashi, Syuusuke; Izuishi, Takuya; Nakazawa, Naoki; Toyoda, Taro; Ohta, Tsuyoshi; Hayase, Shuzi; Minemoto, Takashi; Yoshino, Kenji; Dai, Songyuan; Shen, Qing

    2017-10-24

    Perovskite quantum dots (QDs) as a new type of colloidal nanocrystals have gained significant attention for both fundamental research and commercial applications owing to their appealing optoelectronic properties and excellent chemical processability. For their wide range of potential applications, synthesizing colloidal QDs with high crystal quality is of crucial importance. However, like most common QD systems such as CdSe and PbS, those reported perovskite QDs still suffer from a certain density of trapping defects, giving rise to detrimental nonradiative recombination centers and thus quenching luminescence. In this paper, we show that a high room-temperature photoluminescence quantum yield of up to 100% can be obtained in CsPbI 3 perovskite QDs, signifying the achievement of almost complete elimination of the trapping defects. This is realized with our improved synthetic protocol that involves introducing organolead compound trioctylphosphine-PbI 2 (TOP-PbI 2 ) as the reactive precursor, which also leads to a significantly improved stability for the resulting CsPbI 3 QD solutions. Ultrafast kinetic analysis with time-resolved transient absorption spectroscopy evidence the negligible electron or hole-trapping pathways in our QDs, which explains such a high quantum efficiency. We expect the successful synthesis of the "ideal" perovskite QDs will exert profound influence on their applications to both QD-based light-harvesting and -emitting devices.

  6. High Photoluminescence Quantum Yields in Organic Semiconductor-Perovskite Composite Thin Films.

    Science.gov (United States)

    Longo, Giulia; La-Placa, Maria-Grazia; Sessolo, Michele; Bolink, Henk J

    2017-10-09

    One of the obstacles towards efficient radiative recombination in hybrid perovskites is a low exciton binding energy, typically in the orders of tens of meV. It has been shown that the use of electron-donor additives can lead to a substantial reduction of the non-radiative recombination in perovskite films. Herein, the approach using small molecules with semiconducting properties, which are candidates to be implemented in future optoelectronic devices, is presented. In particular, highly luminescent perovskite-organic semiconductor composite thin films have been developed, which can be processed from solution in a simple coating step. By tuning the relative concentration of methylammonium lead bromide (MAPbBr 3 ) and 9,9spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1), it is possible to achieve photoluminescent quantum yields (PLQYs) as high as 85 %. This is attributed to the dual functions of SPPO1 that limit the grain growth while passivating the perovskite surface. The electroluminescence of these materials was investigated by fabricating multilayer LEDs, where charge injection and transport was found to be severely hindered for the perovskite/SPPO1 material. This was alleviated by partially substituting SPPO1 with a hole-transporting material, 1,3-bis(N-carbazolyl)benzene (mCP), leading to bright electroluminescence. The potential of combining perovskite and organic semiconductors to prepare materials with improved properties opens new avenues for the preparation of simple lightemitting devices using perovskites as the emitter. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

    OpenAIRE

    Carolin M. Sutter-Fella Yanbo Li Matin Amani Joel W. Ager III Francesca M. Toma; Eli Yablonovitch Ian D. Sharp and Ali Javey

    2016-01-01

    Hybrid organic–inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low cost solution processability. Here we present a two step low pressure vapor assisted solution process to grow high quality homogeneous CH3NH3PbI3–xBrx perovskite films over the full band gap range of 1.6–2.3 eV. Photoluminescence light in versus light out charac...

  8. Highly photoluminescent and photostable CdSe quantum dot-nylon hybrid composites for efficient light conversion applications

    Energy Technology Data Exchange (ETDEWEB)

    Yuan Ying; Riehle, Frank-Stefan [Freiburg Materials Research Centre (FMF), University of Freiburg, Stefan-Meier-Str. 21, D-79104 Freiburg (Germany); Department of Microsystems Engineering (IMTEK), Georg Koehler Allee 103, University of Freiburg, D-79110 Freiburg (Germany); Nitschke, Roland [Life Imaging Center, Centre of Systems Biology, University of Freiburg Habsburgerstr. 49, D-79104 Freiburg (Germany); Centre for Biological Signalling Studies (BIOSS), University of Freiburg (Germany); Krueger, Michael, E-mail: michael.krueger@fmf.uni-freiburg.de [Freiburg Materials Research Centre (FMF), University of Freiburg, Stefan-Meier-Str. 21, D-79104 Freiburg (Germany); Department of Microsystems Engineering (IMTEK), Georg Koehler Allee 103, University of Freiburg, D-79110 Freiburg (Germany)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer A novel in situ synthesis approach for highly luminescent CdSe core QDs-nylon hybrid materials. Black-Right-Pointing-Pointer Potential applications for light and energy conversion are demonstrated. Black-Right-Pointing-Pointer Three dimensional structures out of this hybrid material are available. - Abstract: Highly photoluminescent hexadecylamine (HDA) capped core CdSe quantum dots (QDs) with fluorescent quantum yields (QYs) up to 60% were synthesized using a hot injection method and directly incorporated into nylon polymer. For the incorporation of crude CdSe QDs into nylon a simple reproducible and upscalable one pot approach was developed without the need of further purification steps. The photoluminescence (PL) properties of the core QDs and the resulting QD-polymer hybrid composites were investigated and compared. Red emitting hybrid materials exhibit a QY of 60% with a high potential for applications in direct light and energy conversion. The hybrid materials could be successfully utilized as LED conversion layers. By avoiding exposure to oxygen the hybrid films can be kept for a month without detecting a significant decrease in luminescence. Various three dimensional structures are easily available opening doors for further applications such as novel materials for fluorescence standard development in laser scanning microscopy (LSM).

  9. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    International Nuclear Information System (INIS)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva

    2012-01-01

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  12. Highly photoluminescent MoO{sub x} quantum dots: Facile synthesis and application in off-on Pi sensing in lake water samples

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Sai Jin [Jiangxi Key Laboratory of Mass Spectrometry and Instrumentation, East China University of Technology (ECUT), Nanchang 330013 (China); School of Chemistry, Biology and Material Science, ECUT, Nanchang 330013 (China); Zhao, Xiao Jing; Zuo, Jun [School of Chemistry, Biology and Material Science, ECUT, Nanchang 330013 (China); Huang, Hai Qing [State Key Laboratory Breeding Base of Nuclear Resources and Environment, ECUT, Nanchang 330013 (China); Zhang, Li, E-mail: zhangli8@ncu.edu.cn [College of Chemistry, Nanchang University, Nanchang 330031 (China)

    2016-02-04

    Molybdenum oxide (MoO{sub x}) is a well-studied transition-metal semiconductor material, and has a wider band gap than MoS{sub 2} which makes it become a promising versatile probe in a variety of fields, such as gas sensor, catalysis, energy storage ect. However, few MoO{sub x} nanomaterials possessing photoluminescence have been reported until now, not to mention the application as photoluminescent probes. Herein, a one-pot method is developed for facile synthesis of highly photoluminescent MoO{sub x} quantum dots (MoO{sub x} QDs) in which commercial molybdenum disulfide powder and hydrogen peroxide (H{sub 2}O{sub 2}) are involved as the precursor and oxidant, respectively. Compared with current synthesis methods, the proposed one has the advantages of rapid, one-pot, easily prepared, environment friendly as well as strong photoluminescence. The obtained MoO{sub x} QDs is further utilized as an efficient photoluminescent probe, and a new off-on sensor has been constructed for phosphate (Pi) determination in complicated lake water samples, attributed to the fact that the binding affinity of Eu{sup 3+} ions to the oxygen atoms from Pi is much higher than that from the surface of MoO{sub x} QDs. Under the optimal conditions, a good linear relationship was found between the enhanced photoluminescence intensity and Pi concentration in the range of 0.1–160.0 μM with the detection limit of 56 nM (3σ/k). The first application of the photoluminescent MoO{sub x} nanomaterials for ion photochemical sensing will open the gate of employing MoO{sub x} nanomaterials as versatile probes in a variety of fields, such as chemi-/bio-sensor, cell imaging, biomedical and so on. - Highlights: • Though increasing effort has been devoted to MoO{sub x} nanomaterials synthesis, only a few reports mentioning its photoluminescence property are available, while even no evidence has shown its applications in chemical and biological sensing. • Herein, a one-pot method possessing the

  13. Using quantum dot photoluminescence for load detection

    Science.gov (United States)

    Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-01

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  14. Using quantum dot photoluminescence for load detection

    Directory of Open Access Journals (Sweden)

    M. Moebius

    2016-08-01

    Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  15. Simple and greener synthesis of highly photoluminescence Mn{sup 2+}-doped ZnS quantum dots and its surface passivation mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yongbo; Liang, Xuhua; Ma, Xuan; Hu, Yahong [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Hu, Xiaoyun; Li, Xinghua [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Fan, Jun, E-mail: fanjun@nwu.edu.cn [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China)

    2014-10-15

    Graphical abstract: TEM and HRTEM (inset) images of the as-prepared Mn{sup 2+}-doped ZnS QDs and the passivation mechanism model of GSH-capped ZnS QDs (b). - Highlights: • Highly photoluminescent Mn{sup 2+}-doped ZnS quantum dots were synthesized by a simple synthetic method. • The effects of Mn{sup 2+} doping concentration, reaction time and temperature on PL intensity were investigated. • The mechanism of surface passivation was described. - Abstract: In this paper, we reported a simple synthetic method of highly photoluminescent (PL) and stable Mn{sup 2+}-doped ZnS quantum dots (QDs) with glutathione (GSH) as the capping molecule and focused on mechanism of the surface passivation of QDs. The Mn{sup 2+}-doped ZnS QDs that was synthesized in basic solution (pH 10) at 120 °C for 5 h exhibited blue trap-state emission around 418 nm and a strong orange-red emission at about 580 nm with an excitation wavelength of 330 nm. The optimum doping concentration is determined to be 1.5 at.%, and the present Mn{sup 2+}-doped ZnS QDs synthesized under the optimal reaction condition exhibited a quantum yield of 48%. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that the Mn{sup 2+}-doped ZnS QDs were 3–5 nm in size with a zinc blend structure. More importantly, the PL intensity and chemical stability can be improved using organic ligand modification strategies, it was found that GSH could passivate surface defects very efficiently by comparing and analyzing the results of the different organic ligands modification. The cadmium-free Mn{sup 2+}-doped ZnS QDs well-passivated with GSH as capping molecule acquired the advantages of strong PL and excellent chemical stability, which are important to QD applications.

  16. Solvothermal tuning of photoluminescent graphene quantum dots: from preparation to photoluminescence mechanism

    Science.gov (United States)

    Qi, Bao-Ping; Zhang, Xiaoru; Shang, Bing-Bing; Xiang, Dongshan; Zhang, Shenghui

    2018-02-01

    Solvothermal synthesis was employed to tune the surface states of graphene quantum dots (GQDs). Two series of GQDs with the particle sizes from 2.6 to 4.5 nm were prepared as follows: (I) GQDs with the same size but different oxygen degrees; (II) GQDs with different core sizes but the similar surface chemistry. Both the large sizes and the high surface oxidation degrees led to the redshift photoluminescence (PL) of GQDs. Electrochemiluminescence (ECL) spectra from two series of GQDs were all in accordance with their PL spectra, respectively, which provided good evidence for the conjugated structures in GQDs responsible for PL. [Figure not available: see fulltext.

  17. Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

    Directory of Open Access Journals (Sweden)

    Qi Wang

    2013-07-01

    Full Text Available In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM of only 29.5 meV. In addition, a slight blue-shift (∼18 meV of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%, the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.

  18. Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Chan, C.H.; Wu, J.D.; Huang, Y.S.; Hsu, H.P.; Tiong, K.K.; Su, Y.K.

    2010-01-01

    Photoluminescence (PL) and surface photovoltage spectroscopy (SPS) are used to characterize a series of highly strained In x Ga 1-x As/GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy with different indium compositions (0.395 ≤ x ≤ 0.44) in the temperature range of 20 K ≤ T ≤ 300 K. The PL features show redshift in peak positions and broadened lineshape with increasing indium composition. The S-shaped temperature dependent PL spectra have been attributed to carrier localization effect resulting from the presence of indium clusters at QW interfaces. A lineshape fit of features in the differential surface photovoltage (SPV) spectra has been used to determine the transition energies accurately. At temperature below 100 K, the light-hole (LH) related feature shows a significant phase difference as compared to that of heavy-hole (HH) related features. The phase change of the LH feature can be explained by the existence of type-II configuration for the LH valence band and the process of separation of carriers within the QWs together with possible capture by the interface defect traps. A detailed analysis of the observed phenomena enables the identification of spectral features and to evaluate the band lineup of the QWs. The results demonstrate the usefulness of PL and SPS for the contactless and nondestructive characterization of highly strained InGaAs/GaAs QW structures.

  19. Tailoring surface groups of carbon quantum dots to improve photoluminescence behaviors

    International Nuclear Information System (INIS)

    Tian, Ruixue; Hu, Shengliang; Wu, Lingling; Chang, Qing; Yang, Jinlong; Liu, Jun

    2014-01-01

    Highlights: • We develop a facile and green method to tailor surface groups. • Photoluminescence behaviors of carbon quantum dots are improved by tailoring their surface groups. • Highly luminescent efficiency is produced by amino-hydrothermal treatment of reduced carbon quantum dots. - Abstract: A facile and green method to tailor surface groups of carbon quantum dots (CQDs) is developed by hydrothermal treatment in an autoclave. The photoluminescence (PL) behaviors of CQDs depend on the types of surface groups. Highly efficient photoluminescence is obtained through amino-hydrothermal treatment of the CQDs reduced by NaBH 4 . The effects of surface groups on PL behavior are attributed to the degrees of energy band bending induced by surface groups

  20. Crystal habit dependent quantum confined photoluminescence of zinc oxide nanostructures

    International Nuclear Information System (INIS)

    Arellano, Ian Harvey J.; Payawan, Leon Jr. M.; Sarmago, Roland V.

    2008-01-01

    Diverse zinc oxide crystal habits namely wire, rods, tubes, whiskers and tetrapods were synthesized via hydrothermal and carbothermal reduction routes. A vapor current induced regionalization in the carbothermal synthesis lead to the isolation of these crystal habits for characterization. The surface morphology of the nanostructures was analyzed via field emission scanning electron microscopy (FESEM). The morphology and crystallinity of the as-synthesized nanostructure architectural motifs were related to their photoluminescence (PL). The photoluminescence at 157 nm was taken using F2 excimer laser and a crystal habit dependent response was observed. X-ray diffraction (XRD) analyses were conducted to deduce the degree of crystallinity showing results consistent with the excitonic emission at the band edge and visible emission at the electron-hole recombination sites. The presence of minimal crystal defects which gave the green emission was supported by energy dispersive spectroscopy (EDS) data. Transmission spectroscopy for the tetrapods exhibited an interesting PL reduction associated with high-energy deep traps in the nanostructures. Furthermore, some intensity dependent characteristics were deduced indicating quantum confined properties of these nano structures. (author)

  1. Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

    Science.gov (United States)

    Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

    The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

  2. Photoluminescence of hybrid quantum dot systems

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2015-01-01

    Roč. 7, č. 4 (2015), 347-349 ISSN 2164-6627 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * energy transfer * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism

  3. Power-law photoluminescence decay in quantum dots

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2013-01-01

    Roč. 5, č. 6 (2013), s. 608-610 ISSN 2164-6627 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * indirect gap * photoluminescence * electron-phonon interaction * non-adiabatic Subject RIV: BM - Solid Matter Physics ; Magnetism; JA - Electronics ; Optoelectronics, Electrical Engineering (UMCH-V)

  4. Synthesis of blue photoluminescent WS2 quantum dots via ultrasonic cavitation

    International Nuclear Information System (INIS)

    Bayat, A.; Saievar-Iranizad, E.

    2017-01-01

    Blue photoluminescent WS 2 quantum dots (QDs) were synthesized using a simple top-down method from natural raw mineral tungsten disulfide via tip ultrasonication followed by centrifugation in a water-ethanol (0.7/0.3 ratio) as eco-friendly solvent. Cavitation process at a high power (300 W) led to the breaking of bulk WS 2 flakes to its quantum dots. The as synthesized WS 2 QDs showed blue photoluminescence upon UV excitation. The synthesized WS 2 QDs were analysed by UV–vis and photoluminescence spectrophotometry, transmission electron microscopy, atomic force microscopy and X-ray diffraction. According to the transmission electron microscopy images, the size of WS 2 QDs was obtained as 5 nm in average. - Highlights: •Large scale blue photoluminescent WS 2 quantum dots was synthesized using Ultrasonic probe (Cavitation Process). •A solution of water/ethanol (0.7/0.3) was used as eco-friendly solvent instead of unsuitable solvent such as NMP and ACN. •Edges of bulk WS 2 was increased with formation of its quantum dots. •Solution of WS 2 QDs was stable after 6 months.

  5. Synthesis of blue photoluminescent WS{sub 2} quantum dots via ultrasonic cavitation

    Energy Technology Data Exchange (ETDEWEB)

    Bayat, A.; Saievar-Iranizad, E., E-mail: saievare@modares.ac.ir

    2017-05-15

    Blue photoluminescent WS{sub 2} quantum dots (QDs) were synthesized using a simple top-down method from natural raw mineral tungsten disulfide via tip ultrasonication followed by centrifugation in a water-ethanol (0.7/0.3 ratio) as eco-friendly solvent. Cavitation process at a high power (300 W) led to the breaking of bulk WS{sub 2} flakes to its quantum dots. The as synthesized WS{sub 2} QDs showed blue photoluminescence upon UV excitation. The synthesized WS{sub 2} QDs were analysed by UV–vis and photoluminescence spectrophotometry, transmission electron microscopy, atomic force microscopy and X-ray diffraction. According to the transmission electron microscopy images, the size of WS{sub 2} QDs was obtained as 5 nm in average. - Highlights: •Large scale blue photoluminescent WS{sub 2} quantum dots was synthesized using Ultrasonic probe (Cavitation Process). •A solution of water/ethanol (0.7/0.3) was used as eco-friendly solvent instead of unsuitable solvent such as NMP and ACN. •Edges of bulk WS{sub 2} was increased with formation of its quantum dots. •Solution of WS{sub 2} QDs was stable after 6 months.

  6. Dense arrays of ordered pyramidal quantum dots with narrow linewidth photoluminescence spectra

    Energy Technology Data Exchange (ETDEWEB)

    Surrente, A; Gallo, P; Felici, M; Dwir, B; Rudra, A; Kapon, E, E-mail: alessandro.surrente@epfl.c [Laboratory of Physics of Nanostructures, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2009-10-14

    Arrays of site-controlled, pyramidal InGaAs/GaAs quantum dots (QDs) grown by organo-metallic chemical vapour deposition with densities comparable to those of self-assembled QDs (5 x 10{sup 9} cm{sup -2}) are demonstrated. The QDs exhibit high quality photoluminescence spectra with inhomogeneous broadening of only 6.5 meV. The QD dipole moment was estimated through the analysis of time-resolved photoluminescence measurements. Such ordered QD arrays should be useful for applications in active nanophotonic systems such as QD lasers, modulators and switches requiring high overlap of the optical modes with the QD active region.

  7. Photoluminescence intermittency of semiconductor quantum dots in dielectric environments

    Energy Technology Data Exchange (ETDEWEB)

    Isaac, A.

    2006-08-11

    The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)

  8. Photoluminescence efficiency in AlGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Tamulaitis, G.; Mickevičius, J. [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Jurkevičius, J., E-mail: jonas.jurkevicius@ff.vu.lt [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Shur, M.S. [Department of ECE and CIE, Rensselaer Polytechnic Institute (United States); Shatalov, M.; Yang, J.; Gaska, R. [Sensor Electronic Technology, Inc. (United States)

    2014-11-15

    Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence of carrier delocalization. The delocalization at room temperature results predominantly in enhancement of bimolecular radiative recombination, while being favorable for enhancement of nonradiative recombination at low temperatures. Studies of stimulated emission confirmed the strong influence of carrier localization on droop.

  9. Power-law photoluminescence decay in indirect gap quantum dots

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Král, Karel

    2013-01-01

    Roč. 111, November (2013), s. 170-174 ISSN 0167-9317 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12186; GA MŠk LH12236; GA ČR(CZ) GAP205/10/2280 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : quantum dots * indirect gap transition * power-law photoluminescence decay Subject RIV: BM - Solid Matter Physics ; Magnetism; BE - Theoretical Physics (FZU-D) Impact factor: 1.338, year: 2013

  10. Effect of shells on photoluminescence of aqueous CdTe quantum dots

    International Nuclear Information System (INIS)

    Yuan, Zhimin; Yang, Ping

    2013-01-01

    Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling

  11. Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots

    NARCIS (Netherlands)

    Fomin, V.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Koenraad, P.M.; Wolter, J.H.

    2000-01-01

    We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes.

  12. Growth and temperature dependent photoluminescence of InGaAs quantum dot chains

    International Nuclear Information System (INIS)

    Yang, Haeyeon; Kim, Dong-Jun; Colton, John S.; Park, Tyler; Meyer, David; Jones, Aaron M.; Thalman, Scott; Smith, Dallas; Clark, Ken; Brown, Steve

    2014-01-01

    Highlights: • We examine the optical properties of novel quantum dot chains. • Study shows that platelets evolve into quantum dots during heating of the InGaAs platelets encapsulated with GaAs. • Single stack of quantum dots emits light at room temperature. • Quantum dots are of high quality, confirmed by cross-section TEM images and photoluminescence. • Light emission at room temperature weakens beyond the detection limit when the quantum dots form above the critical annealing temperature. - Abstract: We report a study of growth and photoluminescence from a single stack of MBE-grown In 0.4 Ga 0.6 As quantum dot chains. The InGaAs epilayers were grown at a low temperature so that the resulting surfaces remain flat with platelets even though their thicknesses exceed the critical thickness of the conventional Stranski–Krastanov growth mode. The flat InGaAs layers were then annealed at elevated temperatures to induce the formation of quantum dot chains. A reflection high energy electron diffraction study suggests that, when the annealing temperature is at or below 480 °C, the surface of growth front remains flat during the periods of annealing and growth of a 10 nm thick GaAs capping layer. Surprisingly, transmission electron microscopy images do indicate the formation of quantum dot chains, however, so the dot-chains in those samples may form from precursory platelets during the period of temperature ramping and subsequent capping with GaAs due to intermixing of group III elements. The optical emission from the quantum dot layer demonstrates that there is a critical annealing temperature of 480–500 °C above which the properties of the low temperature growth approach are lost, as the optical properties begin to resemble those of quantum dots produced by the conventional Stranski–Krastanov technique

  13. The effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution x-ray diffraction and photoluminescence

    International Nuclear Information System (INIS)

    Selvig, E; Myrvaagnes, G; Bugge, R; Haakenaasen, R; Fimland, B O

    2006-01-01

    Molecular beam epitaxy has been used to grow GaInAsSb/AlGaAsSb multiple-quantum-well (MQW) structures. Growth has been interrupted at the interfaces between the wells and the barriers. During the growth interruptions, the interfaces have been exposed to Sb x (x=1, 2) and As 2 fluxes. The structures have been studied using high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL). The As content in the interface layers has been found to have a large impact on the HRXRD curves. The As content in the interface layers has been determined by simulation of HRXRD rocking curves. We also show how highly strained interfaces cause more satellite peaks to appear in HRXRD rocking curves. PL spectra show that interrupting growth at the interfaces between wells and barriers and exposing the interfaces to an Sb soak result in flatter interfaces

  14. Excitation dependence of photoluminescence in silicon quantum dots

    International Nuclear Information System (INIS)

    Wen Xiaoming; Lap Van Dao; Hannaford, Peter; Cho, E-C; Cho, Young H; Green, Martin A

    2007-01-01

    We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron-hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron-hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide

  15. Dewetting-Induced Photoluminescent Enhancement of Poly(lauryl methacrylate)/Quantum Dot Thin Films.

    Science.gov (United States)

    Geldmeier, Jeffrey; Rile, Lexy; Yoon, Young Jun; Jung, Jaehan; Lin, Zhiqun; Tsukruk, Vladimir V

    2017-12-19

    A new method for enhancing photoluminescence from quantum dot (QD)/polymer nanocomposite films is proposed. Poly(lauryl methacrylate) (PLMA) thin films containing embedded QDs are intentionally allowed to undergo dewetting on substrates by exposure to a nonsolvent vapor. After controlled dewetting, films exhibited typical dewetting morphologies with increased amounts of scattering that served to outcouple photoluminescence from the film and reduce internal light propagation within the film. Up to a 5-fold enhancement of the film emission was achieved depending on material factors such as the initial film thickness and QD concentration within the film. An increase in initial film thickness was shown to increase the dewetted maximum feature size and its characteristic length until a critical thickness was reached where dewetting became inhibited. A unique light exposure-based photopatterning method is also presented for the creation of high contrast emissive patterns as guided by spatially controlled dewetting.

  16. Near-unity photoluminescence quantum yield in MoS.sub.2

    Science.gov (United States)

    Amani, Matin; Lien, Der-Hsien; Kiriya, Daisuke; Bullock, James; Javey, Ali

    2017-12-26

    Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS.sub.2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS.sub.2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8.+-.0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

  17. Surface effects on the photoluminescence of Si quantum dots

    International Nuclear Information System (INIS)

    Wang, Chiang-Jing; Tsai, Meng-Yen; Chi, Cheng Chung; Perng, Tsong-Pyng

    2009-01-01

    Si quantum dots (SiQDs) with sizes ranging from 5 to 20 nm were fabricated by vapor condensation. They showed red photoluminescence (PL) in vacuum with the peak located at around 750 nm. After the specimen was exposed to air, the PL intensity became higher, and continued to increase during the PL test with a cycling of vacuum-air-vacuum. In pure oxygen, the PL intensity exhibited an irreversible decrease, while in nitrogen a smaller amount of reversible increase of PL intensity was observed. Furthermore, the PL intensity exhibited a remarkable enhancement if the SiQDs were treated with water. With HF treatment, the PL peak position showed a blue-shift to 680 nm, and was recovered after subsequent exposure to air. Si-O-H complexes were suggested to be responsible for this red luminescence. The irreversible decrease of PL intensity due to oxygen adsorption was speculated to be caused by the modification of chemical bonds on the surface. In the case of nitrogen adsorption, the PL change was attributed to the surface charging during adsorption.

  18. Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

    Science.gov (United States)

    Reshchikov, M. A.; Foussekis, M.; McNamara, J. D.; Behrends, A.; Bakin, A.; Waag, A.

    2012-04-01

    The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the ZnGa acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90% was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the ZnGa acceptors and free electrons were also estimated from the photoluminescence measurements.

  19. Temperature-dependent photoluminescence of water-soluble quantum dots for a bioprobe

    International Nuclear Information System (INIS)

    Liu Tiancai; Huang Zhenli; Wang Haiqiao; Wang Jianhao; Li Xiuqing; Zhao Yuandi; Luo Qingming

    2006-01-01

    The photoluminescence of water-soluble CdSe/ZnS core/shell quantum dots is found to be temperature-dependent: as temperature arising from 280 K to 351 K, the photoluminescence declines with emission peak shifting towards the red at a rate of ∼0.11 nm K -1 . And the studies show that the photoluminescence of water-soluble CdSe/ZnS quantum dots with core capped by a thinner ZnS shell is more sensitive to temperature than that of ones with core capped by a thicker one. That is, with 50% decrement of the quantum yield the temperature of the former need to arise from 280 K to 295 K, while the latter requires much higher temperature (315.6 K), which means that the integrality of shell coverage is a very important factor on temperature-sensitivity to for the photoluminescence of water-soluble CdSe/ZnS quantum dots. Moreover, it is found that the water-soluble CdSe quantum dots with different core sizes, whose cores are capped by thicker ZnS shells, possess almost the same sensitivity to the temperature. All of the studies about photoluminescence temperature-dependence of water-soluble CdSe/ZnS core/shell quantum dots show an indispensable proof for their applications in life science

  20. Temperature-dependent photoluminescence of water-soluble quantum dots for a bioprobe

    Energy Technology Data Exchange (ETDEWEB)

    Liu Tiancai [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Huang Zhenli [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wang Haiqiao [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wang Jianhao [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Li Xiuqing [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Zhao Yuandi [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)]. E-mail: zydi@mail.hust.edu.cn; Luo Qingming [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2006-02-10

    The photoluminescence of water-soluble CdSe/ZnS core/shell quantum dots is found to be temperature-dependent: as temperature arising from 280 K to 351 K, the photoluminescence declines with emission peak shifting towards the red at a rate of {approx}0.11 nm K{sup -1}. And the studies show that the photoluminescence of water-soluble CdSe/ZnS quantum dots with core capped by a thinner ZnS shell is more sensitive to temperature than that of ones with core capped by a thicker one. That is, with 50% decrement of the quantum yield the temperature of the former need to arise from 280 K to 295 K, while the latter requires much higher temperature (315.6 K), which means that the integrality of shell coverage is a very important factor on temperature-sensitivity to for the photoluminescence of water-soluble CdSe/ZnS quantum dots. Moreover, it is found that the water-soluble CdSe quantum dots with different core sizes, whose cores are capped by thicker ZnS shells, possess almost the same sensitivity to the temperature. All of the studies about photoluminescence temperature-dependence of water-soluble CdSe/ZnS core/shell quantum dots show an indispensable proof for their applications in life science.

  1. Tuning the Photoluminescence of Graphene Quantum Dots by Photochemical Doping with Nitrogen

    Directory of Open Access Journals (Sweden)

    Xiaofen Xu

    2017-11-01

    Full Text Available Nitrogen-doped graphene quantum dots (NGQDs were synthesized by irradiating graphene quantum dots (GQDs in an NH3 atmosphere. The photoluminescence (PL properties of the GQDs and the NGQDs samples were investigated. Compared with GQDs, a clear PL blue-shift of NGQDs could be achieved by regulating the irradiating time. The NGQDs obtained by irradiation of GQDs for 70 min had a high N content of 15.34 at % and a PL blue-shift of about 47 nm. This may be due to the fact that photochemical doping of GQDs with nitrogen can significantly enhance the contents of pyridine-like nitrogen, and also effectively decrease the contents of oxygen functional groups of NGQDs, thus leading to the observed obvious PL blue-shift.

  2. Comparative photoluminescence study of close-packed and colloidal InP/ZnS quantum dots

    Science.gov (United States)

    Thuy, Ung Thi Dieu; Thuy, Pham Thi; Liem, Nguyen Quang; Li, Liang; Reiss, Peter

    2010-02-01

    This letter reports on the comparative photoluminescence study of InP/ZnS quantum dots in the close-packed solid state and in colloidal solution. The steady-state photoluminescence spectrum of the close-packed InP/ZnS quantum dots peaks at a longer wavelength than that of the colloidal ones. Time-resolved photoluminescence shows that the close-packed quantum dots possess a shorter luminescence decay time and strongly increased spectral shift with the time delayed from the excitation moment in comparison with the colloidal ones. The observed behavior is discussed on the basis of energy transfer enabled by the short interparticle distance between the close-packed quantum dots.

  3. Green and fast synthesis of amino-functionalized graphene quantum dots with deep blue photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Blanco, E., E-mail: eduardo.blanco@uca.es; Blanco, G.; Gonzalez-Leal, J. M.; Barrera, M. C.; Domínguez, M.; Ramirez-del-Solar, M. [University of Cádiz, Institute of Electron Microscopy and Materials (Spain)

    2015-05-15

    Graphene quantum dots (GQDs) were prepared using a top-down approach with a green microwave-assisted hydrothermal synthesis from ultrathin graphite, previously ultrasound delaminated. Results obtained by transmission electron microscopy and atomic force microscopy indicate that the so-fabricated GQDs are plates with 6 nm of average diameter, mostly single- or bi-layered. Photoluminescence characterization shows that the strongest emission occurs at 410–415 nm wavelength when the samples are excited at 310–320 nm wavelength. In addition to these down-conversion features, GQDs also exhibit up-conversion photoluminescence when excited in the range 560–800 nm wavelength, with broad emission peaks at 410–450 nm wavelength. Analysis of X-ray photoelectron spectroscopy measurements indicates a higher proportion of C–C sp{sup 2} than sp{sup 3} bonds, with the sp{sup 3} ones mainly located at the GQD surfaces. Also evidences of C–O and C–N bonds at the GQD surface have been observed. The combination of these results with Raman and ultraviolet–visible absorption experiments allows envisaging the GQDs to be composed of amino-functionalized sp{sup 2} islands with a high degree of surface oxidation. This would explain the photoluminescent properties observed in the samples under study. The combined up- and down-conversion photoluminescence processes would made these GQDs a powerful energy-transfer component in GQDs–TiO{sub 2} nanocomposite systems, which could be used in photocatalyst devices with superior performance compared to simple TiO{sub 2} systems.

  4. Efficiency droop suppression of distance-engineered surface plasmon-coupled photoluminescence in GaN-based quantum well LEDs

    Directory of Open Access Journals (Sweden)

    Yufeng Li

    2017-11-01

    Full Text Available Ag coated microgroove with extreme large aspect-ratio of 500:1 was fabricated on p-GaN capping layer to investigate the coupling behavior between quantum wells and surface plasmon in highly spatial resolution. Significant photoluminescence enhancement was observed when the distance between Ag film and QWs was reduced from 220 nm to about 20 nm. A maximum enhancement ratio of 18-fold was achieved at the groove bottom where the surface plasmonic coupling was considered the strongest. Such enhancement ratio was found highly affected by the excitation power density. It also shows high correlation to the internal quantum efficiency as a function of coupling effect and a maximum Purcell Factor of 1.75 was estimated at maximum coupling effect, which matches number calculated independently from the time-resolved photoluminescence measurement. With such Purcell Factor, the efficiency was greatly enhanced and the droop was significantly suppressed.

  5. Excitation density dependence of the photoluminescence from CdxHg1-xTe multiple quantum wells

    International Nuclear Information System (INIS)

    Tonheim, C R; Selvig, E; Nicolas, S; Breivik, M; Haakenaasen, R; Gunnaes, A E

    2008-01-01

    A study of the photoluminescence from a four-period Cd x Hg 1-x Te multiple quantum well structure at 11 K as a function of excitation density is presented. High-resolution X-ray diffraction and transmission electron microscopy revealed that the quantum well structure is of high quality. This was supported by the narrow photoluminescence peak originating in the ground state electron - heavy hole transition, with a full width at half maximum of only 7.4 meV for an excitation density of 1.3 W/cm 2 . When the excitation density was increased from 1.3 to 23.4 W/cm 2 , the peak position was shifted toward higher energy by 2.6 meV and the full width at half maximum increased from 7.4 to 10.9 meV

  6. Chemically modulated graphene quantum dot for tuning the photoluminescence as novel sensory probe

    Science.gov (United States)

    Hwang, Eunhee; Hwang, Hee Min; Shin, Yonghun; Yoon, Yeoheung; Lee, Hanleem; Yang, Junghee; Bak, Sora; Lee, Hyoyoung

    2016-12-01

    A band gap tuning of environmental-friendly graphene quantum dot (GQD) becomes a keen interest for novel applications such as photoluminescence (PL) sensor. Here, for tuning the band gap of GQD, a hexafluorohydroxypropanyl benzene (HFHPB) group acted as a receptor of a chemical warfare agent was chemically attached on the GQD via the diazonium coupling reaction of HFHPB diazonium salt, providing new HFHPB-GQD material. With a help of the electron withdrawing HFHPB group, the energy band gap of the HFHPB-GQD was widened and its PL decay life time decreased. As designed, after addition of dimethyl methyl phosphonate (DMMP), the PL intensity of HFHPB-GQD sensor sharply increased up to approximately 200% through a hydrogen bond with DMMP. The fast response and short recovery time was proven by quartz crystal microbalance (QCM) analysis. This HFHPB-GQD sensor shows highly sensitive to DMMP in comparison with GQD sensor without HFHPB and graphene. In addition, the HFHPB-GQD sensor showed high selectivity only to the phosphonate functional group among many other analytes and also stable enough for real device applications. Thus, the tuning of the band gap of the photoluminescent GQDs may open up new promising strategies for the molecular detection of target substrates.

  7. UV and air stability of high-efficiency photoluminescent silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jihua, E-mail: yangj@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liptak, Richard [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Ave, Terre Haute, IN 47803 (United States); Rowe, David; Wu, Jeslin [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Casey, James; Witker, David [Dow Corning Corporation, 2200 W. Salzburg Road, Midland, MI 48686 (United States); Campbell, Stephen A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Kortshagen, Uwe, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States)

    2014-12-30

    The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

  8. Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

    Directory of Open Access Journals (Sweden)

    Lin Chien-Hung

    2011-01-01

    Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

  9. Photoluminescence of a single InAs/AlAs quantum dot

    International Nuclear Information System (INIS)

    Shamirzaev, T.S.; Zhuravlev, K.S.; Larsson, M.; Holtz, P.O.

    2008-01-01

    Micro-photoluminescence (μ-PL) of a simple InAs/AlAs quantum dot (QD) has been studied. It has been found that the μ-PL emission related to the recombination in a single QD is strongly broadened probably due to spectral diffusion. Emissions related to the recombination of biexcitons and excitons occupying excited levels of the QD are observed in μ-PL spectra at high excitation power densities. A red shift of the μ-PL emissions related to recombination of excitons in the ground and excited levels of the QD with increasing excitation power gives clear evidence for type I alignment of the InAs/AlAs QD. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Time-resolved photoluminescence measurements of InP/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Pham Thi Thuy; Ung Thi Dieu Thuy; Tran Thi Kim Chi; Le Quang Phuong; Nguyen Quang Liem [Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Li Liang; Reiss, Peter [CEA Grenoble, DSM/INAC/SPrAM (UMR 5819 CEA-CNRS-Universite Joseph Fourier)/LEMOH, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)], E-mail: liemnq@ims.vast.ac.vn

    2009-09-01

    This paper reports the results on the time-resolved photoluminescence study of InP/ZnS core/shell quantum dots. The ZnS shell played a decisive role to passivate imperfections on the surface of InP quantum dots, consequently giving rise to a strong enhancement of the photoluminescence from the InP core. Under appropriate excitation conditions, not only the emission from the InP core but also that from the ZnS shell was observed. The emission peak in InP core quantum dots varied as a function of quantum dots size, ranging in the 600 - 700 nm region; while the ZnS shell showed emission in the blue region around 470 nm, which is interpreted as resulting from defects in ZnS.

  11. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Jinmyoung [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Biomedical Engineering Research Center, Asan Institute for Life Sciences, Asan Medical Center, University of Ulsan College of Medicine, Seoul 05505 (Korea, Republic of); Defforge, Thomas; Gautier, Gael, E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Universite Francois Rabelais de Tours, CNRS CEA, INSA-CVL, GREMAN UMR 7347, 37071 Tours Cedex 2 (France); Loni, Armando [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Kim, Dokyoung; Sailor, Michael J., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Li, Z. Y. [Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Canham, Leigh T., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

    2016-04-11

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals (<5 nm), pore collapse and morphological changes within the nanocrystalline structure after common drying processes can affect PL efficiency. We report the highly beneficial effects of using SCD for preparation of photoluminescent pSi powders. Significantly higher surface areas and pore volumes have been realized by utilizing SCD (with CO{sub 2} solvent) instead of air-drying. Correspondingly, the pSi powders better retain the porous structure and the nano-sized silicon grains, thus minimizing the formation of non-radiative defects during liquid evaporation (air drying). The SCD process also minimizes capillary-stress induced contact of neighboring nanocrystals, resulting in lower exciton migration levels within the network. A significant enhancement of the PL quantum yield (>32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  12. Near-unity photoluminescence quantum yield in MoS2

    KAUST Repository

    Amani, Matin; Lien, Der Hsien; Kiriya, Daisuke; Xiao, Jun; Azcatl, Angelica; Noh, Jiyoung; Madhvapathy, Surabhi R.; Addou, Rafik; Santosh, K. C.; Dubey, Madan; Cho, Kyeongjae; Wallace, Robert M.; Lee, Si Chen; He, Jr-Hau; Ager, Joel W.; Zhang, Xiang; Yablonovitch, Eli; Javey, Ali

    2015-01-01

    Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low.The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QYof 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude.The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a finalQYofmore than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

  13. Near-unity photoluminescence quantum yield in MoS2

    KAUST Repository

    Amani, Matin

    2015-11-26

    Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low.The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QYof 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude.The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a finalQYofmore than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

  14. Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots

    Czech Academy of Sciences Publication Activity Database

    Neudert, K.; Trojánek, F.; Kuldová, Karla; Oswald, Jiří; Hospodková, Alice; Malý, P.

    2009-01-01

    Roč. 6, č. 4 (2009), 853-856 ISSN 1862-6351 R&D Projects: GA ČR GA202/06/0718 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * photoluminescence * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism

  15. Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings.

    Science.gov (United States)

    Abbarchi, Marco; Cavigli, Lucia; Somaschini, Claudio; Bietti, Sergio; Gurioli, Massimo; Vinattieri, Anna; Sanguinetti, Stefano

    2011-10-31

    A systematic optical study, including micro, ensemble and time resolved photoluminescence of GaAs/AlGaAs triple concentric quantum rings, self-assembled via droplet epitaxy, is presented. Clear emission from localized states belonging to the ring structures is reported. The triple rings show a fast decay dynamics, around 40 ps, which is expected to be useful for ultrafast optical switching applications.

  16. Quantum dots with indirect band gap: power-law photoluminescence decay

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2014-01-01

    Roč. 11, č. 5 (2014), s. 507-512 ISSN 1708-5284 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : photoluminescence * quantum dots * electron-phonon interaction * inter-valley deformation potential interaction * power-law decay Subject RIV: BM - Solid Matter Physics ; Magnetism

  17. Highly photoluminescent europium tetraphenylimidodiphosphinate ternary complexes with heteroaromatic co-ligands. Solution and solid state studies

    Energy Technology Data Exchange (ETDEWEB)

    Pietraszkiewicz, Marek, E-mail: mpietraszkiewicz@ichf.edu.pl [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw (Poland); Pietraszkiewicz, Oksana; Karpiuk, Jerzy; Majka, Alina [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw (Poland); Dutkiewicz, Grzegorz; Borowiak, Teresa [Adam Mickiewicz University, Faculty of Chemistry, Department of Crystallography, Grunwaldzka 6, 60-780 Poznań (Poland); Kaczmarek, Anna M. [L3–Luminescent Lanthanide Lab, f-element coordination chemistry, Ghent University, Department of Inorganic and Physical Chemistry, Krijgslaan 281, Building S3, 9000 Gent (Belgium); Van Deun, Rik, E-mail: rik.vandeun@ugent.be [L3–Luminescent Lanthanide Lab, f-element coordination chemistry, Ghent University, Department of Inorganic and Physical Chemistry, Krijgslaan 281, Building S3, 9000 Gent (Belgium)

    2016-02-15

    Tetraphenylimidodiphosphinate (tpip) forms neutral 3:1 complexes with lanthanide ions. These complexes can accommodate one ancillary planar heterocyclic ligand to complement their coordination sphere of Eu{sup 3+} to coordination number 8. Several co-ligands were tested to form new complexes: 1,10-phenanthroline, bathophenanthroline, 2,4,6-tris(2-pyridyl)-1,3,5-triazine, dipyrido[3,2-f:2′,3′-h]quinoxaline and 2,2′:6′,2′′-terpyridine. The addition of heterocyclic N,N-bidentate co-ligands to the coordination sphere results in a dramatic (by a factor of 45–50) luminescence enhancement of the parent Eu(tpip){sub 3}. The solid-state measurements confirmed that the ancillary ligands strongly increased the photoluminescence quantum yield (PLQY) of the investigated complexes. - Highlights: • We have disovered highly photoluminescent ternary Eu(III) complexes. • They consist of Eu(III) tetraphenylimidodiphosphinate, and planar heterocyclic ligands. • The increase in photoluminescence quantum yields in solution is enhanced up to 50 times in solution. • The solid-state photoluminescence exceeds 80% at room temperature.

  18. Highly photoluminescent europium tetraphenylimidodiphosphinate ternary complexes with heteroaromatic co-ligands. Solution and solid state studies

    International Nuclear Information System (INIS)

    Pietraszkiewicz, Marek; Pietraszkiewicz, Oksana; Karpiuk, Jerzy; Majka, Alina; Dutkiewicz, Grzegorz; Borowiak, Teresa; Kaczmarek, Anna M.; Van Deun, Rik

    2016-01-01

    Tetraphenylimidodiphosphinate (tpip) forms neutral 3:1 complexes with lanthanide ions. These complexes can accommodate one ancillary planar heterocyclic ligand to complement their coordination sphere of Eu 3+ to coordination number 8. Several co-ligands were tested to form new complexes: 1,10-phenanthroline, bathophenanthroline, 2,4,6-tris(2-pyridyl)-1,3,5-triazine, dipyrido[3,2-f:2′,3′-h]quinoxaline and 2,2′:6′,2′′-terpyridine. The addition of heterocyclic N,N-bidentate co-ligands to the coordination sphere results in a dramatic (by a factor of 45–50) luminescence enhancement of the parent Eu(tpip) 3 . The solid-state measurements confirmed that the ancillary ligands strongly increased the photoluminescence quantum yield (PLQY) of the investigated complexes. - Highlights: • We have disovered highly photoluminescent ternary Eu(III) complexes. • They consist of Eu(III) tetraphenylimidodiphosphinate, and planar heterocyclic ligands. • The increase in photoluminescence quantum yields in solution is enhanced up to 50 times in solution. • The solid-state photoluminescence exceeds 80% at room temperature.

  19. Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

    Science.gov (United States)

    Dong, Yajie

    2017-02-01

    Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum

  20. Detection of CdSe quantum dot photoluminescence for security label on paper

    Energy Technology Data Exchange (ETDEWEB)

    Isnaeni,, E-mail: isnaeni@lipi.go.id; Sugiarto, Iyon Titok [Research Center for Physics, Indonesian Institute of Science, Building 442 Puspiptek Serpong, South Tangerang, Banten, Indonesia 15314 (Indonesia); Bilqis, Ratu; Suseno, Jatmiko Endro [Department of Physics, Diponegoro University, Jl. Prof. Soedarto, Tembalang, Semarang, Indonesia 50275 (Indonesia)

    2016-02-08

    CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program to reveal quantum dot pattern stamp having the word ’RAHASIA’. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.

  1. Origin of low quantum efficiency of photoluminescence of InP/ZnS nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Shirazi, Roza, E-mail: rozas@fotonik.dtu.dk [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); Kovacs, Andras [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grunberg Institute, Forschungszentrum Julich, 52425 Julich (Germany); Dan Corell, Dennis [Department of Photonics Engineering, Technical University of Denmark, Riso, Frederiksborgvej 399, 4000 Roskilde (Denmark); Gritti, Claudia [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); Thorseth, Anders; Dam-Hansen, Carsten; Michael Petersen, Paul [Department of Photonics Engineering, Technical University of Denmark, Riso, Frederiksborgvej 399, 4000 Roskilde (Denmark); Kardynal, Beata [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); PGI-9, Forschungszentrum Julich, JARA FIT, 52425 Julich (Germany)

    2014-01-15

    In this paper, we study the origin of a strong wavelength dependence of the quantum efficiency of InP/ZnS nanocrystals. We find that while the average size of the nanocrystals increased by 50%, resulting in longer emission wavelength, the quantum efficiency drops more than one order of magnitude compared to the quantum efficiency of the small nanocrystals. By correlating this result with the time-resolved photoluminescence we find that the reduced photoluminescence efficiency is caused by a fast growing fraction of non-emissive nanocrystals while the quality of the nanocrystals that emit light is similar for all samples. Transmission electron microscopy reveals the polycrystalline nature of many of the large nanocrystals, pointing to the grain boundaries as one possible site for the photoluminescence quenching defects. -- Highlights: • We investigate drop of quantum efficiency of InP/ZnS nanocrystals emitting at longer wavelengths. • We correlate quantum efficiency measurements with time-resolved carrier dynamics. • We find that only a small fraction of larger nanocrystals is optically active.

  2. Origin of low quantum efficiency of photoluminescence of InP/ZnS nanocrystals

    International Nuclear Information System (INIS)

    Shirazi, Roza; Kovacs, Andras; Dan Corell, Dennis; Gritti, Claudia; Thorseth, Anders; Dam-Hansen, Carsten; Michael Petersen, Paul; Kardynal, Beata

    2014-01-01

    In this paper, we study the origin of a strong wavelength dependence of the quantum efficiency of InP/ZnS nanocrystals. We find that while the average size of the nanocrystals increased by 50%, resulting in longer emission wavelength, the quantum efficiency drops more than one order of magnitude compared to the quantum efficiency of the small nanocrystals. By correlating this result with the time-resolved photoluminescence we find that the reduced photoluminescence efficiency is caused by a fast growing fraction of non-emissive nanocrystals while the quality of the nanocrystals that emit light is similar for all samples. Transmission electron microscopy reveals the polycrystalline nature of many of the large nanocrystals, pointing to the grain boundaries as one possible site for the photoluminescence quenching defects. -- Highlights: • We investigate drop of quantum efficiency of InP/ZnS nanocrystals emitting at longer wavelengths. • We correlate quantum efficiency measurements with time-resolved carrier dynamics. • We find that only a small fraction of larger nanocrystals is optically active

  3. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    Science.gov (United States)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Hatami, F.; Masselink, W. T.; Zhang, H.; Casalboni, M.

    2016-03-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N2) and in solvent vapours of methanol, clorophorm, acetone and water were measured. The presence of vapors of clorophorm, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed.

  4. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    International Nuclear Information System (INIS)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Casalboni, M.; Hatami, F.; Masselink, W.T.; Zhang, H.

    2016-01-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N 2 ) and in solvent vapours of methanol, chloroform, acetone and water were measured. The presence of vapors of chloroform, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed. (paper)

  5. AgCl-doped CdSe quantum dots with near-IR photoluminescence.

    Science.gov (United States)

    Kotin, Pavel Aleksandrovich; Bubenov, Sergey Sergeevich; Mordvinova, Natalia Evgenievna; Dorofeev, Sergey Gennadievich

    2017-01-01

    We report the synthesis of colloidal CdSe quantum dots doped with a novel Ag precursor: AgCl. The addition of AgCl causes dramatic changes in the morphology of synthesized nanocrystals from spherical nanoparticles to tetrapods and finally to large ellipsoidal nanoparticles. Ellipsoidal nanoparticles possess an intensive near-IR photoluminescence ranging up to 0.9 eV (ca. 1400 nm). In this article, we explain the reasons for the formation of the ellipsoidal nanoparticles as well as the peculiarities of the process. The structure, Ag content, and optical properties of quantum dots are also investigated. The optimal conditions for maximizing both the reaction yield and IR photoluminescence quantum yield are found.

  6. Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires

    International Nuclear Information System (INIS)

    Ruiz-Castillo, M.; Segura, A.; Sans, J.A.; Martinez-Pastor, J.; Fuster, D.; Gonzalez, Y.; Gonzalez, L.

    2007-01-01

    This paper investigates the electronic structure of self-assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de-convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock-salt phase (7 GPa). (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Investigation on photoluminescence quenching of CdSe/ZnS quantum dots by organic charge transporting materials

    Directory of Open Access Journals (Sweden)

    Yuqiu Qu

    2015-12-01

    Full Text Available The effect of different organic charge transporting materials on the photoluminescence of CdSe/ZnS core/shell quantum dots has been studied by means of steady-state and time-resolved photoluminescence spectroscopy. With an increase in concentration of the organic charge transporting material in the quantum dots solutions, the photoluminescence intensity of CdSe/ZnS quantum dots was quenched greatly and the fluorescence lifetime was shortened gradually. The quenching efficiency of CdSe/ZnS core/shell quantum dots decreased with increasing the oxidation potential of organic charge transporting materials. Based on the analysis, two pathways in the photoluminescence quenching process have been defined: static quenching and dynamic quenching. The dynamic quenching is correlated with hole transporting from quantum dots to the charge transporting materials.

  8. High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging.

    Science.gov (United States)

    Peng, Mingzeng; Li, Zhou; Liu, Caihong; Zheng, Qiang; Shi, Xieqing; Song, Ming; Zhang, Yang; Du, Shiyu; Zhai, Junyi; Wang, Zhong Lin

    2015-03-24

    A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.

  9. Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

    Energy Technology Data Exchange (ETDEWEB)

    Alejo, T. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Paulo, Pedro M.R. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Merchán, M.D. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Garcia-Fernandez, Emilio; Costa, Sílvia M.B. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Velázquez, M.M., E-mail: mvsal@usal.es [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain)

    2017-03-15

    Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

  10. Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

    International Nuclear Information System (INIS)

    Alejo, T.; Paulo, Pedro M.R.; Merchán, M.D.; Garcia-Fernandez, Emilio; Costa, Sílvia M.B.; Velázquez, M.M.

    2017-01-01

    Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

  11. Hydrothermal synthesis of two photoluminescent nitrogen-doped graphene quantum dots emitted green and khaki luminescence

    International Nuclear Information System (INIS)

    Zhu, Xiaohua; Zuo, Xiaoxi; Hu, Ruiping; Xiao, Xin; Liang, Yong; Nan, Junmin

    2014-01-01

    A simple and effective chemical synthesis of the photoluminescent nitrogen-doped graphene quantum dots (N-GQDs) biomaterial is reported. Using the hydrothermal treatment of graphene oxide (GO) in the presence of hydrogen peroxide (H 2 O 2 ) and ammonia, the N-GQDs are synthesized through H 2 O 2 exfoliating the GO into nanocrystals with lateral dimensions and ammonia passivating the generated active surface. Then, after a dialytic separation, two water-soluble N-GQDs with average size of about 2.1 nm/6.2 nm, which emit green/khaki luminescence and exhibit excitation dependent/independent photoluminescence (PL) behaviors, are obtained. In addition, it is also demonstrated that these two N-GQDs are stable over a broad pH range and have the upconversion PL property, showing this approach provides a simple and effective method to synthesize the functional N-GQDs. - Highlights: • Nitrogen-doped graphene quantum dots (N-GQDs) are prepared by hydrothermal routine. • Two N-GQDs with different size distribution emit green/khaki photoluminescence. • Two N-GQDs exhibit excitation-dependent/independent photoluminescence behaviors

  12. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    International Nuclear Information System (INIS)

    Ananthakumar, S.; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Babu, S. Moorthy; Chari, Rama

    2016-01-01

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a "UCPL bright point" in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  13. Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

    International Nuclear Information System (INIS)

    Isnaeni,; Yulianto, Nursidik; Suliyanti, Maria Margaretha

    2016-01-01

    We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

  14. Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

    Energy Technology Data Exchange (ETDEWEB)

    Isnaeni,, E-mail: isnaeni@lipi.go.id; Yulianto, Nursidik; Suliyanti, Maria Margaretha [Research Center for Physics, Indonesian Institute of Sciences, Building 442, Kawasan Puspiptek, South Tangerang,Banten 15314 Indonesia (Indonesia)

    2016-03-11

    We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

  15. Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

    International Nuclear Information System (INIS)

    Donchev, V; Ivanov, T S; Borisov, K; Angelova, T; Cros, A; Cantarero, A; Fuster, D; Shtinkov, N; Gonzalez, Y; Gonzalez, L

    2010-01-01

    The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

  16. Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

    Science.gov (United States)

    Donchev, V.; Ivanov, T. S.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borisov, K.; Fuster, D.; González, Y.; González, L.

    2010-02-01

    The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

  17. Composition Screening in Blue-Emitting Li4Sr1+xCa0.97-x(SiO4)2:Ce3+ Phosphors for High Quantum Efficiency and Thermally Stable Photoluminescence.

    Science.gov (United States)

    Zhang, Jingchen; Zhang, Jilin; Zhou, Wenli; Ji, Xiaoyu; Ma, Wentao; Qiu, Zhongxian; Yu, Liping; Li, Chengzhi; Xia, Zhiguo; Wang, Zhengliang; Lian, Shixun

    2017-09-13

    Photoluminescence quantum efficiency (QE) and thermal stability are important for phosphors used in phosphor-converted light-emitting diodes (pc-LEDs). Li 4 Sr 1+x Ca 0.97-x (SiO 4 ) 2 :0.03Ce 3+ (-0.7 ≤ x ≤ 1.0) phosphors were designed from the initial model of Li 4 SrCa(SiO 4 ) 2 :Ce 3+ , and their single-phased crystal structures were found to be located in the composition range of -0.4 ≤ x ≤ 0.7. Depending on the substitution of Sr 2+ for Ca 2+ ions, the absolute QE value of blue-emitting composition-optimized Li 4 Sr 1.4 Ca 0.57 (SiO 4 ) 2 :0.03Ce 3+ reaches ∼94%, and the emission intensity at 200 °C remains 95% of that at room temperature. Rietveld refinements and Raman spectral analyses suggest the increase of crystal rigidity, increase of force constant in CeO 6 , and decrease of vibrational frequency by increasing Sr 2+ content, which are responsible for the enhanced quantum efficiency and thermal stability. The present study points to a new strategy for future development of the pc-LEDs phosphors based on local structures correlation via composition screening.

  18. Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot

    Science.gov (United States)

    Ware, M. E.; Stinaff, E. A.; Gammon, D.; Doty, M. F.; Bracker, A. S.; Gershoni, D.; Korenev, V. L.; Bădescu, Ş. C.; Lyanda-Geller, Y.; Reinecke, T. L.

    2005-10-01

    We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge-tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wave functions through asymmetric e-e and e-h exchange interactions.

  19. Plasmon resonance-induced photoluminescence enhancement of CdTe/Cds quantum dots thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hongyu [Nanjing University of Posts and Telecommunications, Nanjing 210003 (China); National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Wu, Yangqing; Xu, Jun; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2016-11-30

    Highlights: • CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated. • PL intensity of the quantum dots films was enhanced due to Au nanorods. • Internal quantum efficiency increased due to localized surface plasmon resonance. • The lifetimes of quantum dots films decreased after interaction with Au nano-rods. - Abstract: CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated on planar Si substrates. The optical properties of all samples were investigated and the corresponding simulations were studied. It was found that the photoluminescence intensity of the CdTe/CdS quantum dots films was enhanced about 9-fold after the incorporation of Au nano-rods, the internal quantum efficiency increased from 24.3% to 35.2% due to the localized surface plasmon resonance. The time-resolved luminescence decay curves showed that the lifetimes of CdTe/CdS quantum dots films decreased to 2.8 ns after interaction with Au nano-rods. The results of finite-difference time-domain simulation indicated that Au nano-rods induced the localization of electric field, which enhanced the PL intensity of quantum dots films in the vicinity of Au nano-rods.

  20. Ratiometric photoluminescence sensing based on Ti3C2 MXene quantum dots as an intracellular pH sensor.

    Science.gov (United States)

    Chen, Xu; Sun, Xueke; Xu, Wen; Pan, Gencai; Zhou, Donglei; Zhu, Jinyang; Wang, He; Bai, Xue; Dong, Biao; Song, Hongwei

    2018-01-18

    Intracellular pH sensing is of importance and can be used as an indicator for monitoring the evolution of various diseases and the health of cells. Here, we developed a new class of surface-functionalized MXene quantum dots (QDs), Ti 3 C 2 , by the sonication cutting and hydrothermal approach and further explored their intracellular pH sensing. The functionalized Ti 3 C 2 QDs exhibit bright excitation-dependent blue photoluminescence (PL) originating from the size effect and surface defects. Meanwhile, Ti 3 C 2 QDs demonstrate a high PL response induced by the deprotonation of the surface defects. Furthermore, combining the highly pH sensitive Ti 3 C 2 QDs with the pH insensitive [Ru(dpp) 3 ]Cl 2 , we developed a ratiometric pH sensor to quantitatively monitor the intracellular pH values. These novel MXene quantum dots can serve as a promising platform for developing practical fluorescent nanosensors.

  1. Size dependent photoluminescence property of hydrothermally synthesized crystalline carbon quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, S.; Banerjee, D.; Ghorai, U.K.; Das, N.S. [School of Material Science and Nanotechnology Jadavpur University, Kolkata 700032 (India); Chattopadhyay, K.K., E-mail: kalyan_chattopadhyay@yahoo.com [School of Material Science and Nanotechnology Jadavpur University, Kolkata 700032 (India); Thin Film and NanoScience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032 (India)

    2016-10-15

    In this work, simple hydrothermal synthesis of water soluble Carbon quantum dots (CQDs) of different sizes has been reported. The effect of synthesis temperature and synthesis time on the particle size has also been shown. The structures of all the as-prepared samples were studied by field emission scanning electron microscope and high resolution transmission electron microscope. Fourier transformed infrared spectrophotometer analyzes the different bonding present in the sample whereas Raman spectrophotometer quantifies the hybridization state of the prepared samples. UV–vis spectrophotometer gives the variation of absorbance of all the samples with wavelength. Dynamic light scattering study shows the variation of particle size with deposition condition and corresponding zeta potential gives the idea about the stability of the CQD solutions. The photoluminescence (PL) properties of the as prepared CQDs were also studied in detail. It is noticed that with the increase of excitation wavelength, the PL emissions for the different samples were red shifted. The results have been explained in terms of the excitation dependent emission, variations in size of the CQD and presence of different functional groups on the surface of CQDs.

  2. Size dependent photoluminescence property of hydrothermally synthesized crystalline carbon quantum dots

    International Nuclear Information System (INIS)

    Sarkar, S.; Banerjee, D.; Ghorai, U.K.; Das, N.S.; Chattopadhyay, K.K.

    2016-01-01

    In this work, simple hydrothermal synthesis of water soluble Carbon quantum dots (CQDs) of different sizes has been reported. The effect of synthesis temperature and synthesis time on the particle size has also been shown. The structures of all the as-prepared samples were studied by field emission scanning electron microscope and high resolution transmission electron microscope. Fourier transformed infrared spectrophotometer analyzes the different bonding present in the sample whereas Raman spectrophotometer quantifies the hybridization state of the prepared samples. UV–vis spectrophotometer gives the variation of absorbance of all the samples with wavelength. Dynamic light scattering study shows the variation of particle size with deposition condition and corresponding zeta potential gives the idea about the stability of the CQD solutions. The photoluminescence (PL) properties of the as prepared CQDs were also studied in detail. It is noticed that with the increase of excitation wavelength, the PL emissions for the different samples were red shifted. The results have been explained in terms of the excitation dependent emission, variations in size of the CQD and presence of different functional groups on the surface of CQDs.

  3. Surface modification effects on defect-related photoluminescence in colloidal CdS quantum dots.

    Science.gov (United States)

    Lee, TaeGi; Shimura, Kunio; Kim, DaeGwi

    2018-05-03

    We investigated the effects of surface modification on the defect-related photoluminescence (PL) band in colloidal CdS quantum dots (QDs). A size-selective photoetching process and a surface modification technique with a Cd(OH)2 layer enabled the preparation of size-controlled CdS QDs with high PL efficiency. The Stokes shift of the defect-related PL band before and after the surface modification was ∼1.0 eV and ∼0.63 eV, respectively. This difference in the Stokes shifts suggests that the origin of the defect-related PL band was changed by the surface modification. Analysis by X-ray photoelectron spectroscopy revealed that the surface of the CdS QDs before and after the surface modification was S rich and Cd rich, respectively. These results suggest that Cd-vacancy acceptors and S-vacancy donors affect PL processes in CdS QDs before and after the surface modification, respectively.

  4. Different approaches for sensing captopril based on functionalized graphene quantum dots as photoluminescent probe

    Energy Technology Data Exchange (ETDEWEB)

    Toloza, Carlos A.T.; Khan, Sarzamin; Silva, Renan L.D. [Department of Chemistry, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil); Romani, Eric C.; Freire, F.L. [Department of Physics, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil); Aucélio, Ricardo Q., E-mail: aucelior@puc-rio.br [Department of Chemistry, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil)

    2016-11-15

    The determination of captopril is proposed using graphene quantum dots produced by the pyrolysis of citric acid and glutathione (GSH-GQDs). Captopril induces both quenching and spectral red-shifting in the photoluminescence from aqueous dispersions of GSH-GQDs. By employing Fe{sup 3+} as mediator (that enables signal quenching of GSH-GQDs), the presence of captopril restored the photoluminescence of quantum dots. Under optimized experimental conditions, the signal quenching from the GSH-GQDs as function of the concentration of captopril showed a linear response range covering three orders of magnitude (10{sup −6} to 10{sup −4} mol L{sup −1}). The proposed approaches were tested by determining captopril in simulated samples and in commercial pharmaceutical formulations. The measurement of either the spectral shifting observed of the GSH-GQDs probe or the photoluminescence switch on/off using GQDs-GSH-Fe{sup 3+} resulted in satisfactory recoveries of captopril, showing the quantitative sensing potential.

  5. Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Zhitao [Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Banishev, Alexandr A.; Christensen, James; Dlott, Dana D. [School of Chemical Sciences and Fredrick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N., E-mail: naresh.thadhani@mse.gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Xiao, Pan [LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); Zhou, Min [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States)

    2016-07-28

    The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

  6. Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

    International Nuclear Information System (INIS)

    Kang, Zhitao; Banishev, Alexandr A.; Christensen, James; Dlott, Dana D.; Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N.; Xiao, Pan; Zhou, Min

    2016-01-01

    The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

  7. Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Kashtiban, R J; Bangert, U; Harvey, A J; Sherliker, B; Halsall, M P

    2010-01-01

    InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation.

  8. Magnetic enhancement of photoluminescence from blue-luminescent graphene quantum dots

    Science.gov (United States)

    Chen, Qi; Shi, Chentian; Zhang, Chunfeng; Pu, Songyang; Wang, Rui; Wu, Xuewei; Wang, Xiaoyong; Xue, Fei; Pan, Dengyu; Xiao, Min

    2016-02-01

    Graphene quantum-dots (GQDs) have been predicted and demonstrated with fascinating optical and magnetic properties. However, the magnetic effect on the optical properties remains experimentally unexplored. Here, we conduct a magneto-photoluminescence study on the blue-luminescence GQDs at cryogenic temperatures with magnetic field up to 10 T. When the magnetic field is applied, a remarkable enhancement of photoluminescence emission has been observed together with an insignificant change in circular polarization. The results have been well explained by the scenario of magnetic-field-controlled singlet-triplet mixing in GQDs owing to the Zeeman splitting of triplet states, which is further verified by temperature-dependent experiments. This work uncovers the pivotal role of intersystem crossing in GQDs, which is instrumental for their potential applications such as light-emitting diodes, photodynamic therapy, and spintronic devices.

  9. Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

    DEFF Research Database (Denmark)

    Steffensen, O. M.; Birkedal, Dan; Hanberg, J.

    1995-01-01

    The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0...

  10. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Chao, E-mail: chaoyangscu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Feng, Guoying, E-mail: guoing_feng@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Dai, Shenyu, E-mail: 232127079@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Wang, Shutong, E-mail: wangshutong.scu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Li, Guang, E-mail: 632524844@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhang, Hua [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhou, Shouhuan, E-mail: zhoush@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); North China Research Institute of Electro-Optics, 4 Jiuxianqiao Street, Chaoyang District, Beijing 100015 (China)

    2017-08-31

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  11. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    International Nuclear Information System (INIS)

    Yang, Chao; Feng, Guoying; Dai, Shenyu; Wang, Shutong; Li, Guang; Zhang, Hua; Zhou, Shouhuan

    2017-01-01

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  12. Self-assembly and photoluminescence evolution of hydrophilic and hydrophobic quantum dots in sol–gel processes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ping, E-mail: mse_yangp@ujn.edu.cn [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China); Matras-Postolek, Katarzyna [Faculty of Chemical Engineering and Technology, Cracow University of Technology, Krakow 31-155 (Poland); Song, Xueling; Zheng, Yan; Liu, Yumeng; Ding, Kun; Nie, Shijie [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China)

    2015-10-15

    Graphical abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were assembled into various morphologies including chain, hollow spheres, fibers, and ring structures through sol–gel processes. The PL properties during assembly as investigated. - Highlights: • Highly luminescent quantum dots (QDs) were synthesized from several ligands. • The evolution of PL in self-assembly via sol–gel processes was investigated. • CdTe QDs were assembled into a chain by controlling hydrolysis and condensation reactions. • Hollow spheres, fibers, and ring structures were created via CdSe/ZnS QDs in sol–gel processes. - Abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were synthesized from several ligands to investigate the PL evolution in QD self-assembly via sol–gel processes. After ligand exchange, CdTe QDs were assembled into a chain by controlling the hydrolysis and condensation reaction of 3-mercaptopropyl-trimethoxysilane. The chain was then coated with a SiO{sub 2} shell from tetraethyl orthosilicate (TEOS). Hollow spheres, fibers, and ring structures were created from CdSe/ZnS QDs via various sol–gel processes. CdTe QDs revealed red-shifted and narrowed PL spectrum after assembly compared with their initial one. In contrast, the red-shift of PL spectra of CdSe/ZnS QDs is small. By optimizing experimental conditions, SiO{sub 2} spheres with multiple CdSe/ZnS QDs were fabricated using TEOS and MPS. The QDs in these SiO{sub 2} spheres retained their initial PL properties. This result is useful for application because of their high stability and high PL efficiency of 33%.

  13. Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

    Science.gov (United States)

    Segura, J.; Garro, N.; Cantarero, A.; Miguel-Sánchez, J.; Guzmán, A.; Hierro, A.

    2007-04-01

    We investigate the effects of electron and hole localization in the emission of a GaInNAs/GaAs single quantum well at low temperatures. Photoluminescence measurements varying the excitation density and under magnetic fields up to 14 T have been carried out. The results indicate that electrons are strongly localized in these systems due to small fluctuations in the nitrogen content of the quaternary alloy. The low linear diamagnetic shift of the emission points out the weakness of the Coulomb correlation between electrons and holes and suggests an additional partial localization of the holes.

  14. Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Takabayashi, K.; Kamiya, I. [Quantum Interface Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan); Sukrittanon, S. [Material Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Pan, J. L.; Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-10-27

    Self-assembled dilute nitride InNP quantum dots (QDs) in GaP matrix grown under the Stranski-Krastanov mode by gas-source molecular beam epitaxy are studied. The N-related localized states inside the InNP QDs provide a spatially direct recombination channel, in contrast to the spatially indirect channel through the strained In(N)P QDs/GaP interface states. The N incorporation into InP QDs therefore causes a blueshift and double-peak features in photoluminescence, which are not observed in other dilute nitride materials.

  15. Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2002-01-01

    The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

  16. A label-free silicon quantum dots-based photoluminescence sensor for ultrasensitive detection of pesticides.

    Science.gov (United States)

    Yi, Yinhui; Zhu, Gangbing; Liu, Chang; Huang, Yan; Zhang, Youyu; Li, Haitao; Zhao, Jiangna; Yao, Shouzhuo

    2013-12-03

    Sensitive, rapid, and simple detection methods for the screening of extensively used organophosphorus pesticides and highly toxic nerve agents are in urgent demand. A novel label-free silicon quantum dots (SiQDs)-based sensor was designed for ultrasensitive detection of pesticides. This sensing strategy involves the reaction of acetylcholine chloride (ACh) with acetylcholinesterase (AChE) to form choline that is in turn catalytically oxidized by choline oxidase (ChOx) to produce betaine and H2O2 which can quench the photoluminescence (PL) of SiQDs. Upon the addition of pesticides, the activity of AChE is inhibited, leading to the decrease of the generated H2O2, and hence the PL of SiQDs increases. By measuring the increase in SiQDs PL, the inhibition efficiency of pesticide to AChE activity was evaluated. It was found that the inhibition efficiency was linearly dependent on the logarithm of the pesticides concentration. Consequently, pesticides, such as carbaryl, parathion, diazinon, and phorate, were determined with the SiQDs PL sensing method. The lowest detectable concentrations for carbaryl, parathion, diazinon, and phorate reached 7.25 × 10(-9), 3.25 × 10(-8), 6.76 × 10(-8), and 1.9 × 10(-7) g/L, respectively, which were much lower than those previously reported. The detecting results of pesticide residues in food samples via this method agree well with those from high-performance liquid chromatography. The simple strategy reported here should be suitable for on-site pesticides detection, especially in combination with other portable platforms.

  17. Excitation density dependence of the photoluminescence from Cd{sub x}Hg{sub 1-x}Te multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Tonheim, C R; Selvig, E; Nicolas, S; Breivik, M; Haakenaasen, R [Norwegian Defence Research Establishment, PO Box 25, N-2027 Kjeller (Norway); Gunnaes, A E [Department of Physics, University of Oslo, Boks 1048 Blindern, N-0316 Oslo (Norway)], E-mail: celin.tonheim@ffi.no

    2008-03-15

    A study of the photoluminescence from a four-period Cd{sub x}Hg{sub 1-x}Te multiple quantum well structure at 11 K as a function of excitation density is presented. High-resolution X-ray diffraction and transmission electron microscopy revealed that the quantum well structure is of high quality. This was supported by the narrow photoluminescence peak originating in the ground state electron - heavy hole transition, with a full width at half maximum of only 7.4 meV for an excitation density of 1.3 W/cm{sup 2}. When the excitation density was increased from 1.3 to 23.4 W/cm{sup 2}, the peak position was shifted toward higher energy by 2.6 meV and the full width at half maximum increased from 7.4 to 10.9 meV.

  18. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

    Science.gov (United States)

    Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming

    2012-07-11

    Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

  19. Strategy for synthesizing quantum dot-layered double hydroxide nanocomposites and their enhanced photoluminescence and photostability.

    Science.gov (United States)

    Cho, Seungho; Jung, Sungwook; Jeong, Sanghwa; Bang, Jiwon; Park, Joonhyuck; Park, Youngrong; Kim, Sungjee

    2013-01-08

    Layered double hydroxide-quantum dot (LDH-QD) composites are synthesized via a room temperature LDH formation reaction in the presence of QDs. InP/ZnS (core/shell) QD, a heavy metal free QD, is used as a model constituent. Interactions between QDs (with negative zeta potentials), decorated with dihydrolipoic acids, and inherently positively charged metal hydroxide layers of LDH during the LDH formations are induced to form the LDH-QD composites. The formation of the LDH-QD composites affords significantly enhanced photoluminescence quantum yields and thermal- and photostabilities compared to their QD counterparts. In addition, the fluorescence from the solid LDH-QD composite preserved the initial optical properties of the QD colloid solution without noticeable deteriorations such as red-shift or deep trap emission. Based on their advantageous optical properties, we also demonstrate the pseudo white light emitting diode, down-converted by the LDH-QD composites.

  20. Photoluminescence spectra of n-doped double quantum wells in a parallel magnetic field

    International Nuclear Information System (INIS)

    Huang, D.; Lyo, S.K.

    1999-01-01

    We show that the photoluminescence (PL) line shapes from tunnel-split ground sublevels of n-doped thin double quantum wells (DQW close-quote s) are sensitively modulated by an in-plane magnetic field B parallel at low temperatures (T). The modulation is caused by the B parallel -induced distortion of the electronic structure. The latter arises from the relative shift of the energy-dispersion parabolas of the two quantum wells (QW close-quote s) in rvec k space, both in the conduction and valence bands, and formation of an anticrossing gap in the conduction band. Using a self-consistent density-functional theory, the PL spectra and the band-gap narrowing are calculated as a function of B parallel , T, and the homogeneous linewidths. The PL spectra from symmetric and asymmetric DQW close-quote s are found to show strikingly different behavior. In symmetric DQW close-quote s with a high density of electrons, two PL peaks are obtained at B parallel =0, representing the interband transitions between the pair of the upper (i.e., antisymmetric) levels and that of the lower (i.e., symmetric) levels of the ground doublets. As B parallel increases, the upper PL peak develops an N-type kink, namely a maximum followed by a minimum, and merges with the lower peak, which rises monotonically as a function of B parallel due to the diamagnetic energy. When the electron density is low, however, only a single PL peak, arising from the transitions between the lower levels, is obtained. In asymmetric DQW close-quote s, the PL spectra show mainly one dominant peak at all B parallel close-quote s. In this case, the holes are localized in one of the QW close-quote s at low T and recombine only with the electrons in the same QW. At high electron densities, the upper PL peak shows an N-type kink like in symmetric DQW close-quote s. However, the lower peak is absent at low B parallel close-quote s because it arises from the inter-QW transitions. Reasonable agreement is obtained with recent

  1. Temperature-dependent photoluminescence study of InP/ZnS quantum dots

    Science.gov (United States)

    Thuy Pham, Thi; Tran, Thi Kim Chi; Liem Nguyen, Quang

    2011-06-01

    This paper reports on the temperature-dependent photoluminescence of InP/ZnS quantum dots under 532 nm excitation, which is above the InP transition energy but well below that of ZnS. The overall photoluminescence spectra show two spectral components. The higher-energy one (named X) is assigned to originate from the excitonic transition; while the low-energy spectral component (named I) is normally interpreted as resulting from lattice imperfections in the crystalline structure of InP/ZnS quantum dots (QDs). Peak positions of both the X and I emissions vary similarly with increasing temperature and the same as the InP bandgap narrowing with temperature. In the temperature range from 15 to 80 K, the ratio of the integrated intensity from the X and the I emissions decreases gradually and then this ratio increases fast at temperatures higher than 80 K. This could result from a population of charge carriers in the lattice imperfection states at a temperature below 80 K to increase the I emission but then with these charge carriers being released to contribute to the X emission.

  2. Photoluminescence Enhancement of Silole-Capped Silicon Quantum Dots Based on Förster Resonance Energy Transfer.

    Science.gov (United States)

    Kim, Seongwoong; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae

    2015-07-01

    Photoluminescent porous silicon were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 650 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon quantum dots in porous silicon. HO-terminated red luminescent PS was obtained by an electrochemical treatment of fresh PS with the current of 150 mA for 60 seconds in water and sodium chloride. As-prepared PS was sonicated, fractured, and centrifuged in toluene solution to obtain photoluminescence silicon quantum dots. Dichlorotetraphenylsilole exhibiting an emission band at 520 nm was reacted with HO-terminated silicon quantum dots to give a silole-capped silicon quantum dots. The optical characterization of silole-derivatized silicon quantum dots was investigated by UV-vis and fluorescence spectrometer. The fluorescence emission efficiency of silole-capped silicon quantum dots was increased by about 2.5 times due to F6rster resonance energy transfer from silole moiety to silicon quantum dots.

  3. Photoluminescence Detected Doublet Structure in the Integer and Fractional Quantum Hall Regime

    International Nuclear Information System (INIS)

    Kim, Yongmin; Munteanu, F.M.; Perry, C.H.; Reno, J.L.; Rickel, D.G.; Simmons, J.A.

    1999-01-01

    We present here the results of polarized magneto-photoluminescence measurements on a high mobility single-heterojunction. The presence of a doublet structure over a large magnetic field range (2>v>l/6) is interpreted as possible evidence for the existence of a magneto-roton minima of the charged density waves. This is understood as an indication of strong electronic correlation even in the case of the IQHE limit

  4. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    Energy Technology Data Exchange (ETDEWEB)

    Ananthakumar, S. [Crystal Growth Centre, Anna University, Chennai 600025 (India); Jayabalan, J., E-mail: jjaya@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Singh, Asha; Khan, Salahuddin [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Babu, S. Moorthy [Crystal Growth Centre, Anna University, Chennai 600025 (India); Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2016-01-15

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a 'UCPL bright point' in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  5. Photoluminescence spectrum changes of GaN quantum wells caused by the strong piezoelectric fields

    Energy Technology Data Exchange (ETDEWEB)

    Herrera, H.; Calderon, A. [CICATA-IPN, Av. Legaria 694, Col. Irrigacion, 11500 Mexico D.F. (Mexico); Gonzalez de la Cruz, G. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico)

    2006-07-01

    Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields induce a reduction of the oscillator strength on the transition energy between the confined electron and hole states in GaN/Al{sub x}Ga{sub 1-x}N QW's and dramatically increase the carrier life time as the QW thickness increases. In this work, we solve analytically the Schroedinger equation for moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large redshifts of the PL energy position and the spatial separation of the electron and hole by several times of the Bohr radius caused by the strong piezoelectric fields are explained using a triangular potential in the Schrodinger equation. The transition energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement with the measured photoluminescence energy peaks. (Author)

  6. Photoluminescence spectrum changes of GaN quantum wells caused by the strong piezoelectric fields

    International Nuclear Information System (INIS)

    Herrera, H.; Calderon, A.; Gonzalez de la Cruz, G.

    2006-01-01

    Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields induce a reduction of the oscillator strength on the transition energy between the confined electron and hole states in GaN/Al x Ga 1-x N QW's and dramatically increase the carrier life time as the QW thickness increases. In this work, we solve analytically the Schroedinger equation for moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large redshifts of the PL energy position and the spatial separation of the electron and hole by several times of the Bohr radius caused by the strong piezoelectric fields are explained using a triangular potential in the Schrodinger equation. The transition energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement with the measured photoluminescence energy peaks. (Author)

  7. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  8. Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn [Engineering Product Development Pillar (EPD), Singapore University of Technology & Design (SUTD), 8 Somapah Road, Singapore 487372 (Singapore); Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Mind Star (Beijing) Technology Co., Ltd., Zhongguancun South Street, Haidian District, No. 45 Hing Fat Building 1001, Beijing 100872 (China); Liu, Zhiqiang, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Tian, Ying Dong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Wang, Guohong [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, Zi-Hui, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn [Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401 (China)

    2016-04-14

    The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well band profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.

  9. Tunable photoluminescence of CsPbBr3 perovskite quantum dots for light emitting diodes application

    Science.gov (United States)

    Chen, Weiwei; Xin, Xing; Zang, Zhigang; Tang, Xiaosheng; Li, Cunlong; Hu, Wei; Zhou, Miao; Du, Juan

    2017-11-01

    All-inorganic cesium lead halide (CsPbBr3) perovskite quantum dots (QDs), as one kind of promising materials, have attracted considerable attention in optoelectronic applications. Herein, we synthesized the colloidal CsPbBr3 QDs with tunable photoluminescence (PL) (493-531 nm) by adjusting the reaction temperatures, which revealed narrow emission bandwidths of about 25 nm. The average diameters of the QDs could be adjusted from 7.1 to 12.3 nm as the temperature increased from 100 °C to 180 °C. Moreover, the radiative lifetimes of CsPbBr3 QDs were measured to be 2 ns, and the single QD fluorescence intensity time trace results demonstrated its suppressed blinking emission. Moreover, green light emitting diodes by using CsPbBr3 QDs casted on blue LED chips were further fabricated, which provided potential applications in the field of display and lighting technology.

  10. On the acceptor-related photoluminescence spectra of GaAs quantum-wire microcrystals: A model calculation

    International Nuclear Information System (INIS)

    Oliveira, L.E.; Porras Montenegro, N.; Latge, A.

    1992-07-01

    The acceptor-related photoluminescence spectrum of a GaAs quantum-wire microcrystal is theoretically investigated via a model calculation within the effective-mass approximation, with the acceptor envelope wave functions and binding energies calculated through a variational procedure. Typical theoretical photoluminescence spectra show two peaks associated to transitions from the n = 1 conduction subband electron gas to acceptors at the on-center and on-edge positions in the wire in good agreement with the recent experimental results by Hirum et al. (Appl. Phys. Lett. 59, 431 (1991)). (author). 14 refs, 3 figs

  11. Effect of Ligand Exchange on the Photoluminescence Properties of Cu-Doped Zn-In-Se Quantum Dots

    Science.gov (United States)

    Dong, Xiaofei; Xu, Jianping; Yang, Hui; Zhang, Xiaosong; Mo, Zhaojun; Shi, Shaobo; Li, Lan; Yin, Shougen

    2018-04-01

    The surface-bound ligands of a semiconductor nanocrystal can affect its electron transition behavior. We investigate the photoluminescence (PL) properties of Cu-doped Zn-In-Se quantum dots (QDs) through the exchange of oleylamine with 6-mercaptohexanol (MCH). Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies, and mass spectrometry reveal that the short-chain MCH molecules are bound to the QD surface. The emission peaks remain unchanged after ligand exchange, and the PL quantum yield is reduced from 49% to 38%. The effects of particle size and defect type on the change in PL behavior upon ligand substitution are excluded through high-resolution transmission electron microscopy, UV-Vis absorption, and PL spectroscopies. The origin of the decreased PL intensity is associated with increased ligand density and the stronger ligand electron-donating abilities of MCH-capped QDs that induce an increase in the nonradiative transition probability. A lower PL quenching transition temperature is observed for MCH-capped QDs and is associated with increasing electron-acoustic phonon coupling due to the lower melting temperature of MCH.

  12. Composition-dependent photoluminescence properties of CuInS_2/ZnS core/shell quantum dots

    International Nuclear Information System (INIS)

    Hua, Jie; Du, Yuwei; Wei, Qi; Yuan, Xi; Wang, Jin; Zhao, Jialong; Li, Haibo

    2016-01-01

    CuInS_2/ZnS (CIS/ZnS) core/shell quantum dots (QDs) with various Cu/In ratios were synthesized using the hot-injection method, and their photoluminescence (PL) properties were investigated by measuring steady-state and time-resolved PL spectroscopy. The emission peak of the CIS/ZnS QDs were tuned from 680 to 580 nm by decreasing the Cu/In precursor ratio from 1/1 to 1/9. As the Cu/In ratio decreases, the PL lifetimes and PL quantum yields (QYs) of CIS/ZnS core/shell QDs increased firstly and then decreased. Two dominant radiative recombination processes were postulated to analyze composition-dependent PL properties, including the recombination from a quantized conduction band to deep defects state and donor-acceptor pair (DAP) recombination. The decrease of PL efficiency resulted from high density defects and traps, which formed at the interface between CIS core and ZnS shell due to the large off-stoichiometry composition. The PL intensity and peak energy for CIS/ZnS core/shell QDs as a function of temperature were also provided. The thermal quenching further confirmed that the PL emission of CIS/ZnS QDs did not come from the recombination of excitons but from the recombination of many kinds of intrinsic defects inside the QDs as emission centers.

  13. The pH-dependent photoluminescence of colloidal CdSe/ZnS quantum dots with different organic coatings

    International Nuclear Information System (INIS)

    Debruyne, David; Locquet, Jean-Pierre; Van Bael, Margriet J; Deschaume, Olivier; Bartic, Carmen; Coutiño-Gonzalez, Eduardo; Hofkens, Johan

    2015-01-01

    The photoluminescence (PL) of colloidal quantum dots (QDs) is known to be sensitive to the solution pH. In this work we investigate the role played by the organic coating in determining the pH-dependent PL. We compare two types of CdSe/ZnS QDs equipped with different organic coatings, namely dihydrolipoic acid (DHLA)-capped QDs and phospholipid micelle-encapsulated QDs. Both QD types have their PL intensity quenched at acidic pH values, but they differ in terms of the reversibility of the quenching process. For DHLA-capped QDs, the quenching is nearly irreversible, with a small reversible component visible only on short time scales. For phospholipid micelle-encapsulated QDs the quenching is notably almost fully reversible. We suggest that the surface passivation by the organic ligands is reversible for the micelle-encapsulated QDs. Additionally, both coatings display pH-dependent spectral shifts. These shifts can be explained by a combination of irreversible processes, such as photo-oxidation and acid etching, and reversible charging of the QD surface, leading to the quantum-confined Stark effect (QCSE), the extent of each effect being coating-dependent. At high ionic strengths, the aggregation of QDs also leads to a spectral (red) shift, which is attributable to the QCSE and/or electronic energy transfer. (paper)

  14. Violet-to-Blue Gain and Lasing from Colloidal CdS Nanoplatelets: Low-Threshold Stimulated Emission Despite Low Photoluminescence Quantum Yield

    Energy Technology Data Exchange (ETDEWEB)

    Diroll, Benjamin T.; Talapin, Dmitri V.; Schaller, Richard D.

    2017-02-13

    Amplified spontaneous emission (ASE) and lasing from solution-processed materials are demonstrated in the challenging violet-to-blue (430–490 nm) spectral region for colloidal nanoplatelets of CdS and newly synthesized core/shell CdS/ZnS nanoplatelets. Despite modest band-edge photoluminescence quantum yields of 2% or less for single excitons, which we show results from hole trapping, the samples exhibit low ASE thresholds. Furthermore, four-monolayer CdS samples show ASE at shorter wavelengths than any reported film of colloidal quantum-confined material. This work underlines that low quantum yields for single excitons do not necessarily lead to a poor gain medium. The low ASE thresholds originate from negligible dispersion in thickness, large absorption cross sections of 2.8 × 10–14 cm–2, and rather slow (150 to 300 ps) biexciton recombination. We show that under higher-fluence excitation, ASE can kinetically outcompete hole trapping. Using nanoplatelets as the gain medium, lasing is observed in a linear optical cavity. This work confirms the fundamental advantages of colloidal quantum well structures as gain media, even in the absence of high photoluminescence efficiency.

  15. Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

    KAUST Repository

    Marcinkevičius, S.; Gelžinytė, K.; Zhao, Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2014-01-01

    © 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs

  16. Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots

    Science.gov (United States)

    Maliya; Aierken, Abuduwayiti; Li, Yudong; Zhou, Dong; Zhao, Xiaofan; Guo, Qi; Liu, Chaoming

    2018-03-01

    We investigate the effects of 1.0MeV electron beam irradiation on the photoluminescence of self-assembled InAs/GaAs quantum dots. After irradiation doses up to 1×1016e-/cm2 , photoluminescence of all samples was degraded dramatically and some additional radiation-induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low electron doses under different photo-injection condition in two samples, are also noticed. Different energy shift was observed in two samples with different Quantum Dot sizes. We attribute this remarkable phenomenon to combination of stress relaxation induced red-shift and In-Ga intermixing caused blue-shift.

  17. Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

    International Nuclear Information System (INIS)

    Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

    2005-01-01

    Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of W and d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties

  18. High-amplitude THz and GHz strain waves, generated by ultrafast screening of piezoelectric fields in InGaN/GaN multiple quantum wells

    DEFF Research Database (Denmark)

    Porte, Henrik; van Capel, P.J.S.; Turchinovich, Dmitry

    2010-01-01

    Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening.......Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening....

  19. Photoluminescence of ZnS: Mn quantum dot by hydrothermal method

    Directory of Open Access Journals (Sweden)

    Yun Hu

    2018-01-01

    Full Text Available ZnS: Mn quantum dots (QDs with the average grain size from 4.2 to 7.2 nm were synthesized by a hydrothermal method. All samples were cubic zinc blende structure (β-ZnS measured using X-ray diffraction (XRD. And the main diffraction peaks of ZnS: Mn shifted slightly towards higher angle in comparison with the intrinsic ZnS because of the substitution of Mn2+ for Zn2+. Due to the small grain size (4-7 nm effect, the poor dispersion and serious reunion phenomenon for the samples were observed from transmission electron microscopy (TEM. ZnS: Mn QDs had four peaks centered at 466, 495, 522, and 554 nm, respectively, in the photoluminescence (PL spectra, in which the band at 554 nm absent in the intrinsic ZnS: Mn is attributed to the doping of Mn2+ in the lattice sites. As the concentration of Mn2+ increasing from 0% to 0.6 at%, the intensity of the PL emission also increased. But the concentration reached 0.9 at%, quenching of PL emission occurred. The peak in ZnS: Mn QDs observed at 490 cm-1 was originated from the stretching vibration of the Mn–O bonds in the Fourier transform infrared (FTIR spectra. And the small changes about this peak compared with the previous reports at 500 cm-1 can be attributed to the formation of quantum dots. This method we utilized to synthesize ZnS: Mn QDs is very simple, low cost, and applicable for other semiconductor QD materials.

  20. Polarization-dependent photoluminescence studies of semipolar and nonpolar InGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Schade, Lukas; Schwarz, Ulrich [IAF, Freiburg (Germany); Wernicke, Tim; Weyers, Markus [FBH, Berlin (Germany); Kneissl, Michael [FBH, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

    2010-07-01

    Light emitted from optical devices based on semi- and nonpolar GaN quantum well (QW) structures is partially or totally polarized, as a consequence of crystal symmetry and band structure. This can be an additional advantage over polar (0001)GaN in specific applications, e.g. in LED backlighting. Fundamentally, the polarized emission stems from breaking the isotropic symmetry of the hexagonal c-plane, resulting in two discrete semi- and nonpolar directions (parallel and normal to the projection of (0001)). We use the k.p method to simulate the crystal-direction dependent emission. The resulting transition matrix elements assign a specific (partial) polarization for each subband. The thermal occupation of the subbands results in a temperature dependent effective polarization of the light emission. We study MOVPE grown homoepitactical polar, semi- and nonpolar samples, measuring the polarization properties of the resonantly excited photoluminescence from the QW. With the complete polarization of the subbands for nonpolar devices it is possible to measure the energetic difference of the first two valence band levels. In contrast to our calculations we find a higher degree of polarization also in semipolar directions. A possible explanation could be a higher energetic subband difference than computed.

  1. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    International Nuclear Information System (INIS)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M.; Chen, D. D.; Xu, F.

    2014-01-01

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488 nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325 nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  2. Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

    Science.gov (United States)

    Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

    2017-07-24

    We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

  3. Anti-Stokes Luminescence in High Quality Quantum Wells

    Science.gov (United States)

    Vinattieri, A.; Bogani, F.; Miotto, A.; Ceccherini, S.

    1997-11-01

    We present a detailed investigation of the anti-Stokes (AS) luminescence which originates from exciton recombination when below gap excitation is used, in a set of high quality quantum well structures. We observe strong excitonic resonances in the AS signal as measured from photoluminescence and photoluminescence excitation spectra. We demonstrate that neither the electromagnetic coupling between the wells nor the morphological disorder can explain this up-conversion effect. Time-resolved luminescence data after ps excitation and fs correlation spectroscopy results provide clear evidence of the occurrence of a two-step absorption which is assisted by the exciton population resonantly excited by the first photon.

  4. Photoluminescence properties of a novel conjugate of water-soluble CdTe quantum dots to guanine

    Energy Technology Data Exchange (ETDEWEB)

    Feng Xuejiao [North-East Normal University, Changchun 130024 (China); Shang, Qingkun, E-mail: shangqk995@nenu.edu.c [North-East Normal University, Changchun 130024 (China); Liu Hongjian [Relia Diagnostic Systems, Burlingame, CA 94010 (United States); Wang Wenlan; Wang Zhidan; Liu Junyu [North-East Normal University, Changchun 130024 (China)

    2010-04-15

    A novel conjugate of water-soluble CdTe quantum dots to a small biomolecule guanine has been obtained in aqueous phase. The photoluminescence property and the stability of the conjugate increased comparing to CdTe QDs. The interaction between CdTe QDs and guanine was studied by TEM, fluorescence microscope and photoluminescence (PL), IR, UV-Vis spectra. The effects of reflux time, pH value, ionic strength, and the ratio of CdTe QDs to guanine on the photoluminescence properties of conjugate were investigated in detail. The results show that guanine has a great influence on both the photoluminescence property and stability of thioglycolic acid-stabilized CdTe QDs. The formation of coordination and hydrogen bond between guanine molecules and CdTe including thioglycolic acid on its surface may effectively enhance the PL intensity and stability of CdTe QDs. The maximum PL intensity of the conjugate was obtained on the condition with lower ionic strength, less than 30 min reflux time, neutral pH value and 6/1 as molar ratio of guanine to CdTe.

  5. The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsumi, Toshiaki [Department of Nanosystem Sciences, Yokohama City University, Yokohama 236-0027 (Japan); Alfieri, Giovanni; Kawakami, Yoichi [Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan); Micheletto, Ruggero, E-mail: ruggero@yokohama-cu.ac.jp [Department of Nanosystem Sciences, Yokohama City University, Yokohama 236-0027 (Japan)

    2017-01-15

    Highlights: • Photoluminescence of InGaN device is variable, there is no clear explanation for this. • We perform an ad-hoc absorption procedure, found that gases on the surface reduce emission. • We found that variability is related to the pressure of the gas in which the sample is immersed. • We point out the role of oxygen as major player in the reduction of photoluminescence. • A model is proposed and explains successfully the dynamical optical processes observed. - Abstract: We show for the first time that photoluminescence of InGaN single quantum wells (SQW) devices is related to the gas pressure in which the sample is immersed, also we give a model of the phenomena to suggest a possible cause. Our model shows a direct relation between experimental behavior and molecular coverage dynamics. This strongly suggests that the driving force of photoluminescence decrease is oxygen covering the surface of the device with a time dynamics that depends on the gas pressure. This aims to contribute to the understanding of the physical mechanism of the so-called optical memory effect and blinking phenomenon observed in these devices.

  6. MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

    International Nuclear Information System (INIS)

    Richter, D; Hafenbrak, R; Joens, K D; Schulz, W-M; Eichfelder, M; Rossbach, R; Jetter, M; Michler, P

    2010-01-01

    To achieve a low density of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.

  7. Integrated smartphone imaging of quantum dot photoluminescence and Förster resonance energy transfer

    Science.gov (United States)

    Petryayeva, Eleonora; Algar, W. Russ

    2015-06-01

    Smartphones and other mobile devices are emerging as promising analytical platforms for point-of-care diagnostics, particularly when combined with nanotechnology. For example, we have shown that the optical properties of semiconductor quantum dots (QDs) are well suited to photoluminescence (PL) detection with a smartphone camera. However, this previous work has utilized an external excitation source for interrogation of QD PL. In this proceeding, we demonstrate that the white-light LED photographic flashes built into smartphones can be optically filtered to yield blue light suitable for excitation of QD PL. Measurements were made by recording video with filtered flash illumination and averaging the frames of the video to obtain images with good signal-to-background ratios. These images permitted detection of green-emitting and red-emitting QDs at levels comparable to those possible with excitation using an external long-wave UV lamp. The optical properties of QDs proved to be uniquely suited to smartphone PL imaging, exhibiting emission that was 1-2 orders magnitude brighter than that of common fluorescent dyes under the same conditions. Excitation with the smartphone flash was also suitable for imaging of FRET between green-emitting QD donors and Alexa Fluor 555 (A555) fluorescent dye acceptors. No significant difference in FRET imaging capability was observed between excitation with the smartphone flash and a long-wave UV lamp. Although the smartphone flash did have some disadvantages compared to an external UV lamp, these disadvantages are potentially offset by the benefit of having excitation and detection integrated into the smartphone.

  8. Photoluminescence and structural properties of CdSe quantum dot–gelatin composite films

    Energy Technology Data Exchange (ETDEWEB)

    Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Gudymenko, O.; Kladko, V. [V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauky 41, 03028 Kyiv (Ukraine); Stroyuk, O.; Raevskaya, A. [L. Pysarzhevsky Institute of Physical Chemistry of NAS of Ukraine, Pr. Nauky 31, 03028 Kyiv (Ukraine); Kryshtab, T. [Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9 U.P.A.L.M., 07738 Mexico D.F. (Mexico)

    2014-11-15

    Optical and structural properties of composite films of CdSe quantum dots (QDs) embedded in gelatin matrix have been investigated by photoluminescence (PL), optical absorption and X-ray diffraction (XRD) methods. The optical absorption of the composite in the visible spectral range is found to be determined mainly by light absorption in the QDs. The decrease of the film transparency and the shift of the absorption edge to lower energies observed upon thermal annealing of the films at 140–160 °C are ascribed to the formation of chromophore groups in gelatin matrix. XRD patterns of the composite revealed helix to coil transition in gelatin matrix under thermal annealing of the composite at 100–160 °C. It is found that PL spectra of the composite are dominated by exciton and defect-related emission of the QDs and also contain weak emission of gelatin matrix. It is found that thermal annealing of the composite at 100–160 °C changes PL intensity and produces the shift of the PL bands to lower energies. As the annealed composite was kept in air for several months, the shift of exciton-related PL band position restored partially and the PL intensity increased. It is proposed that the increase of the PL intensity upon the thermal annealing of composite at 140 °C can be used for enhancement of the QD-related PL. Changes that occurred in the PL spectra of composite are ascribed to structural and chemical transformations in gelatin matrix and at the QD/gelatin interface.

  9. Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites.

    Science.gov (United States)

    Stoddard, Ryan J; Eickemeyer, Felix T; Katahara, John K; Hillhouse, Hugh W

    2017-07-20

    High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83 Cs 0.17 Pb(I 0.66 Br 0.34 ) 3 , resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.

  10. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    International Nuclear Information System (INIS)

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  11. Electric Field Modulation of Semiconductor Quantum Dot Photoluminescence: Insights Into the Design of Robust Voltage-Sensitive Cellular Imaging Probes.

    Science.gov (United States)

    Rowland, Clare E; Susumu, Kimihiro; Stewart, Michael H; Oh, Eunkeu; Mäkinen, Antti J; O'Shaughnessy, Thomas J; Kushto, Gary; Wolak, Mason A; Erickson, Jeffrey S; Efros, Alexander L; Huston, Alan L; Delehanty, James B

    2015-10-14

    The intrinsic properties of quantum dots (QDs) and the growing ability to interface them controllably with living cells has far-reaching potential applications in probing cellular processes such as membrane action potential. We demonstrate that an electric field typical of those found in neuronal membranes results in suppression of the QD photoluminescence (PL) and, for the first time, that QD PL is able to track the action potential profile of a firing neuron with millisecond time resolution. This effect is shown to be connected with electric-field-driven QD ionization and consequent QD PL quenching, in contradiction with conventional wisdom that suppression of the QD PL is attributable to the quantum confined Stark effect.

  12. Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells

    International Nuclear Information System (INIS)

    Almokhtar, Mohamed; Emura, Shuichi; Koide, Akihiro; Fujikawa, Takashi; Asahi, Hajime

    2015-01-01

    Highlights: • We grew Gd-doped GaN multi-quantum wells (MQWs) with quantum layer thickness of one nm by MBE. • The X-ray absorption near edge structure spectra observed at Gd LIII-edge indicate a nitrogen vacancy adjacent to Gd substituting the Ga ion in Gd-doped GaN MQW. • The photoluminescence of the samples is discussed considering the formation of a Gd 3+ :Nitrogen-vacancy complex. • A model is presented considering exciton-polaron formation trapped in defect sites around the Gd 3+ :N-vacancy complex in Gd-doped GaN MQWs. - Abstract: The photoluminescence of Gd-doped GaN multi-quantum wells (MQWs) is presented and discussed considering the formation of a Gd 3+ :Nitrogen-vacancy (N-vacancy) complex. A lower energy photoluminescence peak was observed for the Gd-doped GaN MQW sample with respect to the main peak assigned to a neutral donor bound exciton (D 0 X) of the undoped GaN MQW sample. The X-ray absorption near edge structure spectrum observed at Gd L III -edge indicates a nitrogen vacancy adjacent to the Gd substituting the Ga ion in Gd-doped GaN MQW sample. Local stresses around the Gd dopants in Gd-doped GaN matrix generated due to the larger diameter of the Gd 3+ ion with respect to the Ga 3+ ion can be relieved by the creation of vacancies. The lower formation energy of N-vacancies in GaN matrix introduce them as a preferred candidate to relieve the generated stresses. A Gd 3+ :N-vacancy complex consisting of a Gd 3+ ion and the created nitrogen vacancy adjacent to the Gd 3+ dopant is likely to form in GaN:Gd matrix. The lower photoluminescence peak energy observed in the Gd-doped GaN MQW sample is assigned to the recombination of an exciton captured at the Gd 3+ :N-vacancy complex forming a small polaron-like state. A model is presented considering the small exciton-polaron population in defect sites captured around the Gd 3+ ions in the Gd-doped GaN

  13. Combination of a Sample Pretreatment Microfluidic Device with a Photoluminescent Graphene Oxide Quantum Dot Sensor for Trace Lead Detection.

    Science.gov (United States)

    Park, Minsu; Ha, Hyun Dong; Kim, Yong Tae; Jung, Jae Hwan; Kim, Shin-Hyun; Kim, Do Hyun; Seo, Tae Seok

    2015-11-03

    A novel trace lead ion (Pb(2+)) detection platform by combining a microfluidic sample pretreatment device with a DNA aptamer linked photoluminescent graphene oxide quantum dot (GOQD) sensor was proposed. The multilayered microdevice included a microchamber which was packed with cation exchange resins for preconcentrating metal ions. The sample loading and recovery were automatically actuated by a peristaltic polydimethylsiloxane micropump with a flow rate of 84 μL/min. Effects of the micropump actuation time, metal ion concentration, pH, and the volumes of the sample and eluent on the metal ion capture and preconcentration efficiency were investigated on a chip. The Pb(2+) samples whose concentrations ranged from 0.48 nM to 1.2 μM were successfully recovered with a preconcentration factor value between 4 and 5. Then, the preconcentrated metal ions were quantitatively analyzed with a DNA aptamer modified GOQD. The DNA aptamer on the GOQD specifically captured the target Pb(2+) which can induce electron transfer from GOQD to Pb(2+) upon UV irradiation, thereby resulting in the fluorescence quenching of the GOQD. The disturbing effect of foreign anions on the Pb(2+) detection and the spiked Pb(2+) real samples were also analyzed. The proposed GOQD metal ion sensor exhibited highly sensitive Pb(2+) detection with a detection limit of 0.64 nM and a dynamic range from 1 to 1000 nM. The on-chip preconcentration of the trace metal ions from a large-volume sample followed by the metal ion detection by the fluorescent GOQD sensor can provide an advanced platform for on-site water pollution screening.

  14. Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

    Science.gov (United States)

    Netzel, C.; Knauer, A.; Weyers, M.

    2012-12-01

    We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ = 320-350 nm) by temperature dependent photoluminescence. Low indium content in AlInGaN structures causes a significant intensity increase by change of the polarization of the emitted light. Polarization changes from E ⊥ c to E ‖ c with increasing aluminum content. It switches back to E ⊥ c with the incorporation of indium. The polarization degree decreases with temperature. This temperature dependence can corrupt internal quantum efficiency determination by temperature dependent photoluminescence.

  15. Improved photoluminescence quantum yield and stability of CdSe-TOP, CdSe-ODA-TOPO, CdSe/CdS and CdSe/EP nanocomposites

    Science.gov (United States)

    Wei, Shutian; Zhu, Zhilin; Wang, Zhixiao; Wei, Gugangfen; Wang, Pingjian; Li, Hai; Hua, Zhen; Lin, Zhonghai

    2016-07-01

    Size-controllable monodisperse CdSe nanocrystals with different organic capping were prepared based on the hot-injection method. The effective separation of nucleation and growth was achieved by rapidly mixing two highly reactive precursors. As a contrast, we prepared CdSe/CdS nanocrystals (NCs) successfully based on the selective ion layer adsorption and reaction (SILAR) technique. This inorganic capping obtained higher photoluminescence quantum yield (PLQY) of 59.3% compared with organic capping of 40.8%. Furthermore, the CdSe-epoxy resin (EP) composites were prepared by adopting a flexible ex situ method, and showed excellent stability in the ambient environment for one year. So the composites with both high PLQY of nanocrystals and excellent stability are very promising to device application.

  16. High-fidelity quantum driving

    DEFF Research Database (Denmark)

    Bason, Mark George; Viteau, Matthieu; Malossi, Nicola

    2011-01-01

    Accurately controlling a quantum system is a fundamental requirement in quantum information processing and the coherent manipulation of molecular systems. The ultimate goal in quantum control is to prepare a desired state with the highest fidelity allowed by the available resources...... and the experimental constraints. Here we experimentally implement two optimal high-fidelity control protocols using a two-level quantum system comprising Bose–Einstein condensates in optical lattices. The first is a short-cut protocol that reaches the maximum quantum-transformation speed compatible...

  17. Photoluminescence of Diamondoid Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Clay, William; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Sasagawa, Takao; Iwasa, Akio; /TIT, Nagatsuta; Liu, Zhi; /LBNL, ALS; Dahl, Jeremy E.; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Carlson, Robert M.K.; /Molecular Diamond Technologies, Chevron Technology Ventures; Kelly, Michael; Melos, Nicholas; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Shen, Zhi-Xun; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab. /SIMES, Stanford

    2012-04-03

    The photoluminescence of diamondoids in the solid state is examined. All of the diamondoids are found to photoluminesce readily with initial excitation wavelengths ranging from 233 nm to 240 nm (5.3 eV). These excitation energies are more than 1 eV lower than any previously studied saturated hydrocarbon material. The emission is found to be heavily shifted from the absorption, with emission wavelengths of roughly 295 nm (4.2 eV) in all cases. In the dissolved state, however, no uorescence is observed for excitation wavelengths as short as 200 nm. We also discuss predictions and measurements of the quantum yield. Our predictions indicate that the maximum yield may be as high as 25%. Our measurement of one species, diamantane, gives a yield of 11%, the highest ever reported for a saturated hydrocarbon, even though it was likely not at the optimal excitation wavelength.

  18. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    International Nuclear Information System (INIS)

    Joo, Jinmyoung; Defforge, Thomas; Gautier, Gael; Loni, Armando; Kim, Dokyoung; Sailor, Michael J.; Li, Z. Y.; Canham, Leigh T.

    2016-01-01

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals ( 32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  19. Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

    NARCIS (Netherlands)

    de Boer, W.D.A.M.; McGonigle, C.; Gregorkiewicz, T.; Fujiwara, Y.; Stallinga, P.

    2014-01-01

    We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of

  20. Highly Controlled Synthesis and Super-Radiant Photoluminescence of Plasmonic Cube-in-Cube Nanoparticles.

    Science.gov (United States)

    Park, Jeong-Eun; Kim, Sungi; Son, Jiwoong; Lee, Yeonhee; Nam, Jwa-Min

    2016-12-14

    The plasmonic properties of metal nanostructures have been heavily utilized for surface-enhanced Raman scattering (SERS) and metal-enhanced fluorescence (MEF), but the direct photoluminescence (PL) from plasmonic metal nanostructures, especially with plasmonic coupling, has not been widely used as much as SERS and MEF due to the lack of understanding of the PL mechanism, relatively weak signals, and the poor availability of the synthetic methods for the nanostructures with strong PL signals. The direct PL from metal nanostructures is beneficial if these issues can be addressed because it does not exhibit photoblinking or photobleaching, does not require dye-labeling, and can be employed as a highly reliable optical signal that directly depends on nanostructure morphology. Herein, we designed and synthesized plasmonic cube-in-cube (CiC) nanoparticles (NPs) with a controllable interior nanogap in a high yield from Au nanocubes (AuNCs). In synthesizing the CiC NPs, we developed a galvanic void formation (GVF) process, composed of replacement/reduction and void formation steps. We unraveled the super-radiant character of the plasmonic coupling-induced plasmon mode which can result in highly enhanced PL intensity and long-lasting PL, and the PL mechanisms of these structures were analyzed and matched with the plasmon hybridization model. Importantly, the PL intensity and quantum yield (QY) of CiC NPs are 31 times and 16 times higher than those of AuNCs, respectively, which have shown the highest PL intensity and QY reported for metallic nanostructures. Finally, we confirmed the long-term photostability of the PL signal, and the signal remained stable for at least 1 h under continuous illumination.

  1. Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

    Science.gov (United States)

    Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

    2015-02-07

    Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

  2. Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kawazu, T., E-mail: KAWAZU.Takuya@nims.go.jp; Noda, T.; Sakuma, Y. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)

    2016-04-15

    We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 {sup o}C and 400 {sup o}C) and carried out PL measurements. The 20 {sup o}C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences of the PL characteristics are explained by the effects of the WL.

  3. Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Iida, Daisuke; Chen, Yuntian

    2016-01-01

    We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed...

  4. Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well

    International Nuclear Information System (INIS)

    Baranowski, M; Kudrawiec, R; Latkowska, M; Syperek, M; Misiewicz, J; Sarmiento, T; Harris, J S

    2013-01-01

    In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ∼700 °C and ∼760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ∼720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.

  5. Nearly suppressed photoluminescence blinking of small-sized, blue-green-orange-red emitting single CdSe-based core/gradient alloy shell/shell quantum dots: correlation between truncation time and photoluminescence quantum yield.

    Science.gov (United States)

    Roy, Debjit; Mandal, Saptarshi; De, Chayan K; Kumar, Kaushalendra; Mandal, Prasun K

    2018-04-18

    CdSe-based core/gradient alloy shell/shell semiconductor quantum dots (CGASS QDs) have been shown to be optically quite superior compared to core-shell QDs. However, very little is known about CGASS QDs at the single particle level. Photoluminescence blinking dynamics of four differently emitting (blue (λem = 510), green (λem = 532), orange (λem = 591), and red (λem = 619)) single CGASS QDs having average sizes 600 nm). In this manuscript, we report nearly suppressed PL blinking behaviour of CGASS QDs with average sizes correlation between the event durations and found that residual memory exists in both the ON- and OFF-event durations. Positively correlated successive ON-ON and OFF-OFF event durations and negatively correlated (anti-correlated) ON-OFF event durations perhaps suggest the involvement of more than one type of trapping process within the blinking framework. The timescale corresponding to the additional exponential term has been assigned to hole trapping for ON-event duration statistics. Similarly, for OFF-event duration statistics, this component suggests hole detrapping. We found that the average duration of the exponential process for the ON-event durations is an order of magnitude higher than that of the OFF-event durations. This indicates that the holes are trapped for a significantly long time. When electron trapping is followed by such a hole trapping, long ON-event durations result. We have observed long ON-event durations, as high as 50 s. The competing charge tunnelling model has been used to account for the observed blinking behaviour in these CGASS QDs. Quite interestingly, the PLQY of all of these differently emitting QDs (an ensemble level property) could be correlated with the truncation time (a property at the single particle level). A respective concomitant increase-decrease of ON-OFF event truncation times with increasing PLQY is also indicative of a varying degree of suppression of the Auger recombination processes in these four

  6. Intense, stable and excitation wavelength-independent photoluminescence emission in the blue-violet region from phosphorene quantum dots

    Science.gov (United States)

    Ge, Shuaipeng; Zhang, Lisheng; Wang, Peijie; Fang, Yan

    2016-01-01

    Nanoscale phosphorene quantum dots (PQDs) with few-layer structures were fabricated by pulsed laser ablation of a bulk black phosphorus target in diethyl ether. An intense and stable photoluminescence (PL) emission of the PQDs in the blue-violet wavelength region is clearly observed for the first time, which is attributed to electronic transitions from the lowest unoccupied molecular orbital (LUMO) to the highest occupied molecular orbital (HOMO) and occupied molecular orbitals below the HOMO (H-1, H-2), respectively. Surprisingly, the PL emission peak positions of the PQDs are not red-shifted with progressively longer excitation wavelengths, which is in contrast to the cases of graphene and molybdenum disulphide quantum dots. This excitation wavelength-independence is derived from the saturated passivation on the periphery and surfaces of the PQDs by large numbers of electron-donating functional groups which cause the electron density on the PQDs to be dramatically increased and the band gap to be insensitive to the quantum size effect in the PQDs. This work suggests that PQDs with intense, stable and excitation wavelength-independent PL emission in the blue-violet region have a potential application as semiconductor-based blue-violet light irradiation sources. PMID:27265198

  7. Tailoring the Crystal Structure of Nanoclusters Unveiled High Photoluminescence via Ion Pairing

    KAUST Repository

    Bootharaju, Megalamane Siddaramappa

    2018-03-26

    The lack of structurally distinct nanoclusters (NCs) of identical size and composition prevented the mechanistic understanding of their structural effects on ion pairing and concomitant optical properties. To produce such highly sought NCs, we designed a new monothiolate-for-dithiolate exchange strategy that enabled the selective transformation of the structure of a NC without affecting its metal atomicity or composition. Through this method, a bimetallic [PtAg28(BDT)12(PPh3)4]4– NC (1) was successfully synthesized from [PtAg28(S-Adm)18(PPh3)4]2+ NC (2) (S-Adm, 1-adamantanethiolate; BDT, 1,3-benzenedithiolate; PPh3, triphenylphosphine). The determined X-ray crystal structure of 1 showed a PtAg12 icosahedron core and a partially exposed surface, which are distinct from a face-centered cubic PtAg12 core and a fully covered surface of 2. We reveal through mass spectrometry (MS) that 1 forms ion pairs with counterions attracted by the core charge of the cluster, which is in line with density functional simulations. The MS data for 1, 2, and other NCs suggested that such attraction is facilitated by the exposed surface of 1. The formation of ion pairs increases the photoluminescence (PL) quantum yield of 1 up to 17.6% depending on the bulkiness of the counterion. Unlike small counterions, larger ones are calculated to occupy ≤90% of the volume near the exposed cluster surface and to make the ligand shell of 1 more rigid, which is observed to increase the PL. Thus, the developed synthesis strategy for structurally different NCs of the same size and composition allows us to probe the structure–property relationship for ion pairing and concomitant PL enhancement.

  8. Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Rihani, J.; Sedrine, N.B.; Sallet, V.; Oueslati, M.; Chtourou, R.

    2008-01-01

    InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 deg. C). With increasing excitation density, the ground-state transition energy is found to decrease by 8 meV, while the excited-state transition energies exhibit resonance behaviour. The redshift of the ground-state emission was related to the band-gap renomalization (BGR) effect whereas the blueshift of the excited-state emissions was assigned to the compensation between filling of fine structure states and BGR effects. Using a quasi-resonant PL measurement, we have shown that the renormalization of the band-gap had to occur in the QD barrier

  9. Characterisation of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies

    International Nuclear Information System (INIS)

    Ivanov, Ts; Donchev, V; Angelova, T; Cros, A; Cantarero, A; Shtinkov, N; Borissov, K; Fuster, D; Gonzalez, Y; Gonzalez, L

    2010-01-01

    The optical properties of multi-layer InAs/InP quantum wires (QWRs) with two different spacer thicknesses have been investigated by means of room temperature surface photovoltage (SPV) and photoluminescence (PL) spectroscopies, combined with empirical tight binding electronic structure calculations and structural data. The SPV and PL spectra reveal several features, which energy positions are in good agreement. They have been ascribed to excitonic transitions, which take place in the QWR families with heights differing by an integer number of monolayers. Comparing the experimental results with the theoretical ones, we have estimated the QWR family heights and the average atomic concentration of phosphorus in the QWRs. From the simultaneous analysis of the SPV amplitude and phase spectra, based on our vector model for SPV signal representation, a deeper understanding of the SPV results and of the mechanisms of carrier separation in the sample is obtained.

  10. Characterisation of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies

    Science.gov (United States)

    Ivanov, Ts; Donchev, V.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borissov, K.; Fuster, D.; González, Y.; González, L.

    2010-11-01

    The optical properties of multi-layer InAs/InP quantum wires (QWRs) with two different spacer thicknesses have been investigated by means of room temperature surface photovoltage (SPV) and photoluminescence (PL) spectroscopies, combined with empirical tight binding electronic structure calculations and structural data. The SPV and PL spectra reveal several features, which energy positions are in good agreement. They have been ascribed to excitonic transitions, which take place in the QWR families with heights differing by an integer number of monolayers. Comparing the experimental results with the theoretical ones, we have estimated the QWR family heights and the average atomic concentration of phosphorus in the QWRs. From the simultaneous analysis of the SPV amplitude and phase spectra, based on our vector model for SPV signal representation, a deeper understanding of the SPV results and of the mechanisms of carrier separation in the sample is obtained.

  11. Photoluminescence investigation of type-II GaSb/GaAs quantum dots grown by liquid phase epitaxy

    Science.gov (United States)

    Wang, Yang; Hu, Shuhong; Xie, Hao; Lin, Hongyu; lu, Hongbo; Wang, Chao; Sun, Yan; Dai, Ning

    2018-06-01

    GaSb quantum dots (QDs) with an areal density of ∼1 × 1010 cm-2 are successfully grown by the modified (rapid slider) liquid phase epitaxy technique. The morphology of the QDs has been investigated by scanning electron microscope (SEM) and atom force microscope (AFM). The power-dependence and temperature-dependence photoluminescence (PL) spectra have been studied. The bright room-temperature PL suggests a good luminescence quality of GaSb QDs/GaAs matrix system. The type-II alignment of the GaSb QDs/GaAs matrix system is verified by the blue-shift of the QDs peak with the increase of excitation power. From the temperature-dependence PL spectra, the activation energy of QDs is determined to be 111 meV.

  12. The influence of bio-conjugation on photoluminescence of CdSe/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, Tetyana V. [ESFM Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional, México, D.F. 07738 (Mexico); Vorobiev, Yuri V. [Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV) Querétaro, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, 76230 Querétaro (Mexico); Makhniy, Victor P. [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi (Ukraine); Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico)

    2014-11-15

    We report a considerable blue shift in the luminescence spectra of CdSe/ZnS quantum dots conjugated to anti-interleukin-10 antibodies. This phenomenon can be explained theoretically by accounting for bio-conjugation as a process causing electrostatic interaction between a quantum dot and an antibody, which reduces effective volume of the dot core. To solve the Schrödinger equation for an exciton confined in the quantum dot, we use mirror boundary conditions that were successfully tested for different geometries of quantum wells.

  13. Origin of low quantum efficiency of photoluminescence of InP/ZnS nanocrystals

    DEFF Research Database (Denmark)

    Shirazi, Roza; Kovacs, Andras; Corell, Dennis Dan

    2013-01-01

    In this paper, we study the origin of a strong wavelength dependence of the quantum efficiency of InP/ZnS nanocrystals. We find that while the average size of the nanocrystals increased by 50%, resulting in longer emission wavelength, the quantum efficiency drops more than one order of magnitude...

  14. Red-shift of the photoluminescent emission peaks of CdTe quantum dots due to the synergistic interaction with carbon quantum dot mixtures

    International Nuclear Information System (INIS)

    Pelayo, E; Zazueta, A; López-Delgado, R; Ayón, A; Saucedo, E; Ruelas, R

    2016-01-01

    We report the relatively large red-shift effect observed in down-shifting carbon quantum dots (CQDs) that is anticipated to have a positive impact on the power conversion efficiency of solar cells. Specifically, with an excitation wavelength of 390 nm, CQDs of different sizes, exhibited down-shifted emission peaks centered around 425 nm. However, a solution comprised of a mixture of CQDs of different sizes, was observed to have an emission peak red-shifted to 515 nm. The effect could arise when larger carbon quantum dots capture the photons emitted by their smaller counterparts followed by the subsequent re-emission at longer wavelengths. Furthermore, the red-shift effect was also observed in CdTe QDs when added to a solution with the aforementioned mixture of Carbon QDs. Thus, whereas a solution solely comprised of a collection of CdTe QDs of different sizes, exhibited a down-shifted photoluminescence centered around 555 nm, the peak was observed to be further red-shifted to 580 nm when combined with the solution of CQDs of different sizes. The quantum dot characterization included crystal structure analysis as well as photon absorption and photoluminescence wavelengths. Subsequently, the synthesized QDs were dispersed in a polymeric layer of poly-methyl-methacrylate (PMMA) and incorporated on functional and previously characterized solar cells, to quantify their influence in the electrical performance of the photovoltaic structures. We discuss the synthesis and characterization of the produced Carbon and CdTe QDs, as well as the observed improvement in the power conversion efficiency of the fabricated photovoltaic devices. (paper)

  15. Diamond photonic crystal slab: leaky modes and modified photoluminescence emission of surface-deposited quantum dots

    Czech Academy of Sciences Publication Activity Database

    Ondič, Lukáš; Babchenko, Oleg; Varga, Marián; Kromka, Alexander; Čtyroký, Jiří; Pelant, Ivan

    2012-01-01

    Roč. 2, Dec (2012), s. 1-6 ISSN 2045-2322 R&D Projects: GA ČR(CZ) GAP108/11/0794; GA AV ČR(CZ) IAA101120804; GA AV ČR KJB100100903; GA ČR(CZ) GAP205/10/0046 Grant - others:AVČR(CZ) M100100902 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z20670512 Keywords : photonic crystal * diamond * photoluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.927, year: 2012 http://www.nature.com/srep/2012/121203/srep00914/full/srep00914.html

  16. Quantification of thyroxine by the selective photoluminescence quenching of L-cysteine–ZnS quantum dots in aqueous solution containing hexadecyltrimethylammonium bromide

    International Nuclear Information System (INIS)

    Khan, Sarzamin; Carneiro, Leonardo S.A.; Romani, Eric C.; Larrudé, Dunieskys G.; Aucelio, Ricardo Q.

    2014-01-01

    The determination of L-thyroxine is proposed based on the photoluminescence quenching effect caused on the L-cysteine modified ZnS quantum dots (L-cysteine ZnS QDs) aqueous dispersion. Under optimum conditions, the analytical response followed a Stern–Volmer model and the experimental conditions were adjusted to enable a robust and reproducible photoluminescence signal. The linear response observed in the quantum dots aqueous dispersion covered the L-thyroxine concentration from the LOQ (2.0×10 −8 mol L −1 ) to 4.0×10 −6 mol L −1 . The approach was tested in the determination of L-thyroxine in pharmaceutical formulations used to treat patients with thyroid gland disorder. The percent recoveries in controlled samples were between 93.3 and 103%. Analyte fortified saliva was also evaluated as a possible sample for L-thyroxine monitoring of a patient under treatment. It was identified a static type of photoluminescence quenching caused by L-thyroxine. - Highlights: • L-cysteine ZnS QDs were used as a photoluminescent probe to detect L-thyroxine. • Intensity of probe decreases following a Stern–Volmer model. • The method can detect down ng L −1 levels of L-thyroxine in the probe dispersion. • Method was used to determinate of L-thyroxine in saliva and in pharmaceuticals. • Mechanism of interaction between L-thyroxine and quantum dots was studied

  17. Photoluminescence spectral study of single cadmium selenide/zinc sulfide colloidal nanocrystals in poly(methyl methacrylate) and quantum dots molecules

    Science.gov (United States)

    Shen, Yaoming

    Quantum dots (QDs)and Nano-crystals (NCs) have been studies for decades. Because of the nanoscale quantum confinement, delta shape like energy density states and narrowband emitters properties, they hold great promise for numerous optoelectronics and photonics applications. They could be used for tunable lasers, white LED, Nano-OLED, non-volatile memory and solar cells. They are also the most promising candidates for the quantum computing. The benefits for NCs over QDs is that NCs can be incorporated into a variety of polymers as well as thin films of bulk semiconductors. These exceptional flexibility and structural control distinguish NCs from the more traditional QD structures fabricated using epitaxial growth techniques. In my research of work, I studied the photoluminescence (PL) and absorption character of ensemble NCs incorporated in Polymethyl methacrylate (PMMA). To understand the behavior of the NCs in PMMA, it is important to measure a singe NC to avoid the inhomogenous broading of many NCs. So I particularly studied the behavior of a single NC in PMMA matrix. A microphotoluminescence setup to optically isolate a single nanocrystal is used. Random spectral shift and blinking behavior (on and off) are found. Addition to that, two color spectral shifting, is a major phenomena found in the system. Other interesting results such as PL intensity changes (decreasing or increasing with time) and quenching effect are observed and explained too. From the correlation function, we can distinguish the phonon replicas. The energy of these phonons can be calculated very accurately from the experiment result. The Huang-Rhys factors can be estimated too. Self-assembled semiconductor quantum dots (QDs), from highly strained-layer heteroepitaxy in the Stranski-Krastanow (S-K) growth mode, have been intensively studied because of the delta-function-like density of states, which is significant for optoelectronic applications. Spontaneous formation of semiconductor quantum

  18. Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

    Science.gov (United States)

    Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

    2018-04-01

    The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

  19. A robust ligand exchange approach for preparing hydrophilic, biocompatible photoluminescent quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Sujuan; Zhou, Changhua [Key Laboratory for Special Functional Materials of the Ministry of Education, Henan University, Kaifeng 475004 (China); Yuan, Hang [Life Science Division, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Shen, Huaibin [Key Laboratory for Special Functional Materials of the Ministry of Education, Henan University, Kaifeng 475004 (China); Zhao, Wenxiu [Life Science Division, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Ma, Lan, E-mail: malan@sz.tsinghua.edu.cn [Life Science Division, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Li, Lin Song, E-mail: lsli@henu.edu.cn [Key Laboratory for Special Functional Materials of the Ministry of Education, Henan University, Kaifeng 475004 (China)

    2013-08-01

    Graphical abstract: - Highlights: • Aqueous CdSe/ZnS QDs were prepared using polymaleic anhydrides as capping ligand. • Effect of reaction temperature and time were systematically studied in the synthesis process. • Water-soluble QDs exhibited a good stability in physiological relevant environment. • The aqueous QDs were applied as biological probe to detect human embryonic stem cell. - Abstract: This paper describes a robust ligand exchange approach for preparing biocompatible CdSe/ZnS quantum dots (QDs) to make bioprobe for effective cell imaging. In this method, polymaleic anhydride (PMA) ligand are first used to replace original hydrophobic ligand (oleic acid) and form a protection shell with multiple hydrophilic groups to coat and protect CdSe/ZnS QDs. The as-prepared aqueous QDs exhibit small particle size, good colloidal stability in aqueous solutions with a wide range of pH, salt concentrations and under thermal treatment, which are necessary for biological applications. The use of this new class of aqueous QDs for effective cell imaging shows strong fluorescence signal to human embryonic stem cell, which demonstrate that PMA coated QDs are fully satisfied with the requirements of preparing high quality biological probe.

  20. Photoluminescence characteristics of InAs quantum dots grown by STM/MBE site-control technique

    Energy Technology Data Exchange (ETDEWEB)

    Nishikawa, S.; Kohmoto, S.; Nakamura, H.; Ishikawa, T.; Asakawa, K.; Wada, O. [Femtosecond Technology Research Association, Tsukuba, Ibaraki (Japan). FESTA Lab.

    2001-03-08

    This paper describes micro-photoluminescence (PL) analysis of site-controlled QDs (SCQDs) grown using a novel in-situ MBE growth technique in which sites of self-assembled InAs QDs are controlled by forming nanometer deposits using a scanning tunneling microscope (STM) probe. We found from the temperature dependence of PL that the carrier collection at QDs at low temperature is limited by carrier diffusion in the wetting layer. The analysis of PL data considering this effect has indicated that individual QDs grown have high crystalline quality in spite of the addition of an artificial STM process during growth. (orig.)

  1. Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods.

    Science.gov (United States)

    Park, Youngsin; Chan, Christopher C S; Nuttall, Luke; Puchtler, Tim J; Taylor, Robert A; Kim, Nammee; Jo, Yongcheol; Im, Hyunsik

    2018-05-25

    We have investigated the emission from InGaN/GaN quantum disks grown on the tip of GaN nanorods. The emission at 3.21 eV from the InGaN quantum disk doesn't show a Stark shift, and it is linearly polarized when excited perpendicular to the growth direction. The degree of linear polarization is about 39.3% due to the anisotropy of the nanostructures. In order to characterize a single nanostructure, the quantum disks were dispersed on a SiO 2 substrate patterned with a metal reference grid. By rotating the excitation polarization angle from parallel to perpendicular relative to the nanorods, the variation of overall PL for the 3.21 eV peak was recorded and it clearly showed the degree of linear polarization (DLP) of 51.5%.

  2. Absolute determination of photoluminescence quantum efficiency using an integrating sphere setup

    International Nuclear Information System (INIS)

    Leyre, S.; Coutino-Gonzalez, E.; Hofkens, J.; Joos, J. J.; Poelman, D.; Smet, P. F.; Ryckaert, J.; Meuret, Y.; Durinck, G.; Hanselaer, P.; Deconinck, G.

    2014-01-01

    An integrating sphere-based setup to obtain a quick and reliable determination of the internal quantum efficiency of strongly scattering luminescent materials is presented. In literature, two distinct but similar measurement procedures are frequently mentioned: a “two measurement” and a “three measurement” approach. Both methods are evaluated by applying the rigorous integrating sphere theory. It was found that both measurement procedures are valid. Additionally, the two methods are compared with respect to the uncertainty budget of the obtained values of the quantum efficiency. An inter-laboratory validation using the two distinct procedures was performed. The conclusions from the theoretical study were confirmed by the experimental data

  3. Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

    Science.gov (United States)

    Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S.

    2018-03-01

    We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

  4. Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

    KAUST Repository

    Tangi, Malleswararao

    2018-03-09

    We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

  5. Anisotropic carrier and exciton confinement in T-shaped quantum wires revealed by magneto-photoluminescence

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Gislason, Hannes; Hvam, Jørn Märcher

    1998-01-01

    The realization of one-dimensional (1D) semiconductor nanostructures with large confinement energies is of importance for device applications. Different techniques such as growth on tilted substrates (Serpentine superlattices) or prepatterned substrates (V-groove quantum wires) and the cleaved...

  6. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    NARCIS (Netherlands)

    Young, M.P.; Woodhead, C.S.; Roberts, J.; Noori, Y.J.; Noble, M.T.; Krier, A.; Smakman, E.P.; Koenraad, P.M.; Hayne, M.; Young, R.J.

    2014-01-01

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at

  7. Photoluminescence up-conversion in five Inx(Al0.17Ga0.83)1-xAs/ Al0.17Ga0.83As quantum wells with different x values

    DEFF Research Database (Denmark)

    Machida, S.; Tadakuma, T.; Satake, A.

    Photoluminescence (PL) up-conversion in a unique system with five different quantum wells has been investigated. Anti-Stokes PL intensity observed shows dramatic dependence on where carriers are resonantly photoexcited, indicating nonlinear processes with spatial position dependence.......Photoluminescence (PL) up-conversion in a unique system with five different quantum wells has been investigated. Anti-Stokes PL intensity observed shows dramatic dependence on where carriers are resonantly photoexcited, indicating nonlinear processes with spatial position dependence....

  8. Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

    Science.gov (United States)

    Can, Nuri; Okur, Serdal; Monavarian, Morteza; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Teke, Ali; Özgür, Ümit

    2015-03-01

    Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect on the internal quantum efficiencies. It was confirmed for all LEDs that the photoluminescence (PL) transients are governed by radiative recombination at low temperatures while nonradiative recombination dominates at room temperature. At photoexcited carrier densities of 3 - 4.5 x 1016 cm-3 , the room-temperature Shockley-Read-Hall (A) and the bimolecular (B) recombination coefficients (A, B) were deduced to be (9.2x107 s-1, 8.8x10-10 cm3s-1), (8.5x107 s-1, 6.6x10-10 cm3s-1), and (6.5x107 s-1, 1.4x10-10 cm3s-1) for the six period 1.5, 2, and 3 nm well-width LEDs, respectively. From the temperature dependence of the radiative lifetimes, τrad α Tn/2, the dimensionality n of the active region was found to decrease consistently with decreasing well width. The 3 nm wide wells exhibited ~T1.5 dependence, suggesting a three-dimensional nature, whereas the 1.5 nm wells were confirmed to be two-dimensional (~T1) and the 2 nm wells close to being two-dimensional. We demonstrate that a combination of temperature dependent PL and time-resolved PL techniques can be used to evaluate the dimensionality as well as the quantum efficiencies of the LED active regions for a better understanding of the relationship between active-region design and the efficiency limiting processes in InGaN LEDs.

  9. Photoluminescent enhancement of CdSe/Cd(1-x) Zn(x)S quantum dots by hexadecylamine at room temperature.

    Science.gov (United States)

    Yang, Jie; Yang, Ping

    2012-09-01

    CdSe/Cd(1-x) Zn(x)S core/shell quantum dots (QDs) were fabricated in 1-octadecene via a two step synthesis. CdSe cores were first prepared using CdO, trioctylphosphine (TOP) selenium, and stearic acid. Subsquently, a Cd(1-x) Zn(x)S shell coating was carried out using zinc acetate dihydrate, cadmium acetate dihydrate, TOPS, and hexadecylamine (HDA) starting materials in the friendly organic system under relatively low temperature. The absorption and photoluminescence (PL) spectra have a significant red shift after the coverage of Cd(1-x)Zn(x)S shell on CdSe cores. The X-ray diffraction analysis of samples confirmed the formation of core/shell structure. The PL quantum yields (QYs) of CdSe/Cd(1-x)Zn(x)S QDs were improved gradually with time at room temperature. This is ascribed to the surface passivation of HDA to the QDs during store. This phenomenon was confirmed by the Fourier transform infrared spectrum of samples. Namely, HDA does not capped on the surface of as-prepared QDs, in which a low PL QYs was observed (less than 10%). Being storing for certain time, HDA attached to the surface of the QDs, in which the PL QYs increased (up to 31%) and the full width at half maximum of PL spectra decreased. Moreover, the fluorescence decay curve of the core/shell QDs is closer to a biexponential decay profile and has a longer average PL lifetime. The variation of average PL lifetime also indicated the influence of HDA during store.

  10. The mechanism of the photoluminescence changes in bio-conjugated CdSe/ZnS quantum dots

    Science.gov (United States)

    Borkovska, L.; Korsunska, N.; Stara, T.; Kolomys, O.; Strelchuk, V.; Rachkov, O.; Kryshtab, T.

    2013-09-01

    The change of the photoluminescence (PL) and optical characteristics in non-conjugated and conjugated with S6K2 antibody CdSe/ZnS core/shell quantum dots (QDs) during storage in air has been studied by the conventional PL, micro-PL and micro-Raman techniques. The QDs dried on a crystalline Si substrate were kept in the darkness and under illumination. In the PL spectra, the storage resulted in a blue shift of PL peak position, in the increasing of the full width at a half maximum (FWHM) of the PL band and in the decreasing of the PL intensity. In the Raman spectra, the shift of the CdSe LO peak position to the low frequency region and the increasing of its FWHM were observed. The transformations in the PL and optical characteristics correlate with each other and are found to be the largest in bio-conjugated QDs stored under illumination. The increase of the light intensity accelerated the changes occurred during storage. An oxidation of the QD core, which decreases the QD size, is supposed to be responsible for observed transformations. The bio-conjugation is assumed to promote QD oxidation that results in different PL peak position in stored non-conjugated and bio-conjugated QDs. The mechanism of the effect is discussed.

  11. Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

    Science.gov (United States)

    Blenkhorn, W. E.; Schulz, S.; Tanner, D. S. P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.; Dawson, P.

    2018-05-01

    In this paper we report on changes in the form of the low temperature (12 K) photoluminescence spectra of an InGaN/GaN quantum well structure as a function of excitation photon energy. As the photon energy is progressively reduced we observe at a critical energy a change in the form of the spectra from one which is determined by the occupation of the complete distribution of hole localisation centres to one which is determined by the resonant excitation of specific localisation sites. This change is governed by an effective mobility edge whereby the photo-excited holes remain localised at their initial energy and are prevented from scattering to other localisation sites. This assignment is confirmed by the results of atomistic tight binding calculations which show that the wave function overlap of the lowest lying localised holes with other hole states is low compared with the overlap of higher lying hole states with other higher lying hole states.

  12. Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells

    International Nuclear Information System (INIS)

    Wang, L.S.; Sun, W.H.; Chua, S.J.; Johnson, Mark

    2003-01-01

    The GaN/AlGaN multi-quantum-wells (MQWs) have been grown via metalorganic chemical vapor deposition (MOCVD). Micro-photoluminescence (PL) measurement has been performed on non-, In- and Si- doped GaN/AlGaN MQW samples in the temperature ranges of 90-300 K. In the non-doped GaN/AlGaN MQWs we observed the free exciton peak at 3.4587 eV at 90 K. Other exciton related peaks are located at 3.4346, 3.4177, 3.394 and 3.3129 eV, which are probably associated with the strongly localized excitons involving the defects. In In-doped GaN/AlGaN MQWs, the free exciton peaks have a slight red-shift from 3.4712 to 3.4629 eV, but the PL intensities become stronger with increasing trimethylindium (TMIn) flow from 10.6 to 42.6 μmol min -1 . With Si-doping in the well layers, PL exhibits an envelope of exciton bands ranged from 3.4796 (free exciton) to 3.43915 eV. The excitonic peaks in the bands vary in intensity and position with sample temperature. In addition, we have also observed the LO phonon replica of AlGaN interacted by the laser line due to the resonance effect

  13. Transformation of photoluminescence spectra at the bioconjugation of core-shell CdSe/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Macotela, L.G.V.; Douda, J. [UPIITA - Instituto Politecnico Nacional, Mexico (Mexico); Torchynska, T.V. [ESFM- Instituto Politecnico Nacional, Mexico (Mexico); Sierra, R.P. [CINVESTAV del IPN, Mexico (Mexico); Shcherbyna, L. [V. Lashkarev Institute of Semiconductor Physics at NASU, Kiev (Ukraine)

    2010-04-15

    The photoluminescence (PL) of nonconjugated and bioconjugated core-shell CdSe/ZnS quantum dots (QDs) has been discussed in this paper. Commercial CdSe/ZnS QDs with the size of 3.6-4.0 nm covered by polymer with emission at 560-565 nm (2.19-2.22 eV) have been used. The QD bioconjugation is performed with the mouse anti PSA (Prostate-Specific Antigen) antibody (mab). PL spectra of nonconjugated QDs are characterized by a superposition of PL bands related to exciton emission in the CdSe core (2.19-2.22 eV) and to hot electron-hole emission via surface states (2.37, 2.73 and 3.06 eV) at the CdSe/ZnS or ZnS/polymer interfaces. The PL spectrum of bioconjugated QDs has changed dramatically, with essential decreasing of the hot electron-hole recombination flow via interface states. This effect is explained on the base of re-charging of QD interface states at the bioconjugation. It is shown that the CdSe/ZnS QDs with interface states are very promising for the study of bioconjugation effects to antibodies (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Photoluminescence investigation of ZnO quantum dots surface modified with silane coupling agent as a capping agent

    Energy Technology Data Exchange (ETDEWEB)

    Moghaddam, E., E-mail: e.moghaddam@merc.ac.ir; Youzbashi, A.A; Kazemzadeh, A.; Eshraghi, M.J.

    2015-12-15

    This report presents the luminescence measurement results of surface modified zinc oxide quantum dots (ZnO QDs) performed with different concentrations of 3-aminopropyltriethoxysilane (APTES) as a capping agent. Surface modification was performed by an in situ procedure on the surface of ZnO QDs in a sol gel solution route. The modified samples were characterized by various analytical techniques such as XRD, TEM, FT-IR, and UV–vis spectroscopy. Surface modification efficiency was experimentally investigated by variation of the photoluminescence) PL (emission intensities observed by changing the capping agent concentration. In order to investigate the effectiveness of the capping agent on the stability of the QDs, The PL spectra of the surface modified ZnO QDs were compared with that of unmodified ZnO QDs. Molecular layer of this type and similar silane based molecules with a variety of surface terminations that have the same molecular attachment schemes should enable interface engineering in optimizing the chemical selectivity of ZnO biosensors or electrical and optical properties of ZnO-polymer hybrid films. - Highlights: • Surface modification of ZnO QDs resulted in the small- size QDs (around 2 nm). • Surface modification resulted in the enhancement of the UV emission upon quenching the visible emission. • Surface modification efficiency was decreased with reduction of the QD size • Intensified stability of the surface modified ZnO QDs was obtained from surface modification.

  15. Photoluminescence of colloidal CdSe nano-tetrapods and quantum dots in oxygenic and oxygen-free environments

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Lijuan [Donghua University, Applied Physics Department, Shanghai (China); Hong Kong University of Science and Technology, Physics Department and the Institute of Nano-Science and Technology, Hong Kong (China); Pang, Qi; Ge, Weikun; Wang, Jiannong [Hong Kong University of Science and Technology, Physics Department and the Institute of Nano-Science and Technology, Hong Kong (China); Yang, Shihe [Hong Kong University of Science and Technology, Chemistry Department and the Institute of Nano-Science and Technology, Hong Kong (China)

    2011-05-15

    The effects of oxygenic versus oxygen-free environments on colloidal CdSe nano-tetrapods and quantum dots (QDs) were studied using both continuous and time-resolved photoluminescence (PL) measurements. The decays of PL intensities for tetrapods and QDs in oxygen-free solution (chloroform) and in air (on silicon) can be well fitted by a bi-exponential function. Based on the emission-energy dependence of carrier lifetimes and the amplitude ratio of the fast-decay component to the slow-decay component, the fast and slow PL decays of CdSe nanocrystals are attributed to the recombination of delocalized carriers in the core states and localized carriers in the surface states, respectively. The PL intensities of CdSe nano-tetrapods and QDs were found to be five times and an order of magnitude higher in air than in vacuum, respectively, which is explained by the passivation of surface defects by the polar gas (oxygen) absorption. The lower enhancement in PL intensities of CdSe nano-tetrapods is explained by the special morphology of the tetrapods. (orig.)

  16. Composition-dependent trap distributions in CdSe and InP quantum dots probed using photoluminescence blinking dynamics.

    Science.gov (United States)

    Chung, Heejae; Cho, Kyung-Sang; Koh, Weon-Kyu; Kim, Dongho; Kim, Jiwon

    2016-07-21

    Although Group II-VI quantum dots (QDs) have attracted much attention due to their wide range of applications in QD-based devices, the presence of toxic ions in II-VI QDs raises environmental concerns. To fulfill the demands of nontoxic QDs, synthetic routes for III-V QDs have been developed. However, only a few comparative analyses on optical properties of III-V QDs have been performed. In this study, the composition-related energetic trap distributions have been explored by using three different types of core/multishell QDs: CdSe-CdS (CdSe/CdS/ZnS), InP-ZnSe (InP/ZnSe/ZnS), and InP-GaP (InP/GaP/ZnS). It was shown that CdSe-CdS QDs have much larger trap densities than InP-shell QDs at higher energy states (at least 1Eg (band gap energy) above the lowest conduction band edge) based on probability density plots and Auger ionization efficiencies which are determined by analyses of photoluminescence blinking dynamics. This result suggests that the composition of encapsulated QDs is closely associated with the charge trapping processes, and also provides an insight into the development of more environmentally friendly QD-based devices.

  17. Graphene Oxide Quantum Dots Exfoliated From Carbon Fibers by Microwave Irradiation: Two Photoluminescence Centers and Self-Assembly Behavior.

    Science.gov (United States)

    Yuan, Jian-Min; Zhao, Rui; Wu, Zhen-Jun; Li, Wei; Yang, Xin-Guo

    2018-04-17

    Graphene oxide quantum dots (GOQDs) attract great attention for their unique properties and promising application potential. The difficulty in the formation of a confined structure, and the numerous and diverse oxygen-containing functional groups results in a low emission yield to GOQDs. Here, GOQDs with a size of about 5 nm, exfoliated from carbon fibers by microwave irradiation, are detected and analyzed. The exfoliated GOQDs are deeply oxidized and induce large numbers of epoxy groups and ether bonds, but only a small amount of carbonyl groups and hydroxyl groups. The subdomains of sp 2 clusters, involving epoxy groups and ether bonds, are responsible for the two strong photoluminescence emissions of GOQDs under different excitation wavelengths. Moreover, GOQDs tend to self-assemble at the edges of their planes to form self-assembly films (SAFs) with the evaporation of water. SAFs can further assemble into different 3D patterns with unique microstructures such as sponge bulk, sponge ball, microsheet, sisal, and schistose coral, which are what applications such as supercapacitors, cells, catalysts, and electrochemical sensors need. This method for preparation of GOQDs is easy, quick, and environmentally friendly, and this work may open up new research interests about GOQDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Enhancement of the photoluminescence in CdSe quantum dot–polyvinyl alcohol composite by light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Gudymenko, O.; Venger, Ye. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauky 41, 03028 Kyiv (Ukraine); Stroyuk, O.; Raevska, O. [L. Pysarzhevsky Institute of Physical Chemistry, NAS of Ukraine, pr. Nauky 31, 03028 Kyiv (Ukraine); Kryshtab, T., E-mail: kryshtab@gmail.com [Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9 U.P.A.L.M., 07738 Mexico D.F. (Mexico)

    2013-09-15

    The effect of photo-induced enhancement (more than a tenfold) of room temperature deep-trap photoluminescence (PL) in CdSe quantum dots (QDs) embedded in polyvinyl alcohol (PVA) film has been found and investigated by the PL and X-ray diffraction methods. The effect is observed under illumination of the QD/PVA composite with LED's light of 409 or 470 nm at elevated temperatures and is shown to be caused by an increase of the activation energy of thermal quenching of defect-related PL. It is shown that thermal annealing of the composite by itself stimulates polymer crystallization and produces a small increase in the intensity of both the band-edge and defect-related PL bands of CdSe QDs. It is found that the effect of illumination decreases when the annealing temperature increases from 90 °C to 120 °C because thermal annealing at 120 °C per se results in strong enhancement of room temperature deep-trap PL. The effect of photo-induced enhancement of defect-related PL is found to be irreversible and is assumed to be related to the change of QD surface defect passivation or surface defect rearrangement. This is ascribed to partial destruction of PVA matrix as a result of interaction of QD/PVA interface with photocarriers generated in the QDs due to LED's light absorption.

  19. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    Directory of Open Access Journals (Sweden)

    M. P. Young

    2014-11-01

    Full Text Available We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 μeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  20. On quantum efficiency of photoluminescence in ZnO layers and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Reshchikov, M.A., E-mail: mreshchi@vcu.ed [Physics Department, Virginia Commonwealth University, 701 W. Grace St., Richmond, VA 23284 (United States); El-Shaer, A.; Behrends, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University of Braunschweig, Braunschweig D-38106 (Germany)

    2009-12-15

    In this work we studied PL in ZnO layers and nanostructures, including ZnO homoepitaxial layers on ZnO substrate and ZnO-Zn{sub 1-x}Mg{sub x}O single quantum well (SQW) structures grown on sapphire substrates by MBE, and ZnO nanowires grown on sapphire by MOCVD. The external quantum efficiency (QE) of PL in O-face ZnO layers exceeded that in Zn-face ZnO layers by two orders of magnitude at low temperatures. In a sample with SQW the combined external QE from the 4.6-nm-wide SQW and 50-nm-thick Zn{sub 1-x}Mg{sub x}O barriers achieved 28% at 15 K. The highest external QE was observed in one of the samples with ZnO nanowires-52% at 15 K and 2% at 300 K. Contribution of defect-related PL bands in ZnO nanowires samples was extremely low.

  1. Quantification of thyroxine by the selective photoluminescence quenching of L-cysteine–ZnS quantum dots in aqueous solution containing hexadecyltrimethylammonium bromide

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Sarzamin; Carneiro, Leonardo S.A. [Chemistry Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro-RJ (Brazil); Romani, Eric C.; Larrudé, Dunieskys G. [Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900, Rio de Janeiro-RJ (Brazil); Aucelio, Ricardo Q., E-mail: aucelior@puc-rio.br [Chemistry Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro-RJ (Brazil)

    2014-12-15

    The determination of L-thyroxine is proposed based on the photoluminescence quenching effect caused on the L-cysteine modified ZnS quantum dots (L-cysteine ZnS QDs) aqueous dispersion. Under optimum conditions, the analytical response followed a Stern–Volmer model and the experimental conditions were adjusted to enable a robust and reproducible photoluminescence signal. The linear response observed in the quantum dots aqueous dispersion covered the L-thyroxine concentration from the LOQ (2.0×10{sup −8} mol L{sup −1}) to 4.0×10{sup −6} mol L{sup −1}. The approach was tested in the determination of L-thyroxine in pharmaceutical formulations used to treat patients with thyroid gland disorder. The percent recoveries in controlled samples were between 93.3 and 103%. Analyte fortified saliva was also evaluated as a possible sample for L-thyroxine monitoring of a patient under treatment. It was identified a static type of photoluminescence quenching caused by L-thyroxine. - Highlights: • L-cysteine ZnS QDs were used as a photoluminescent probe to detect L-thyroxine. • Intensity of probe decreases following a Stern–Volmer model. • The method can detect down ng L{sup −1} levels of L-thyroxine in the probe dispersion. • Method was used to determinate of L-thyroxine in saliva and in pharmaceuticals. • Mechanism of interaction between L-thyroxine and quantum dots was studied.

  2. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

    Directory of Open Access Journals (Sweden)

    Wu Jiang

    2010-01-01

    Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

  3. Fluorescent porous silicon biological probes with high quantum efficiency and stability.

    Science.gov (United States)

    Tu, Chang-Ching; Chou, Ying-Nien; Hung, Hsiang-Chieh; Wu, Jingda; Jiang, Shaoyi; Lin, Lih Y

    2014-12-01

    We demonstrate porous silicon biological probes as a stable and non-toxic alternative to organic dyes or cadmium-containing quantum dots for imaging and sensing applications. The fluorescent silicon quantum dots which are embedded on the porous silicon surface are passivated with carboxyl-terminated ligands through stable Si-C covalent bonds. The porous silicon bio-probes have shown photoluminescence quantum yield around 50% under near-UV excitation, with high photochemical and thermal stability. The bio-probes can be efficiently conjugated with antibodies, which is confirmed by a standard enzyme-linked immunosorbent assay (ELISA) method.

  4. High-dimensional quantum cloning and applications to quantum hacking.

    Science.gov (United States)

    Bouchard, Frédéric; Fickler, Robert; Boyd, Robert W; Karimi, Ebrahim

    2017-02-01

    Attempts at cloning a quantum system result in the introduction of imperfections in the state of the copies. This is a consequence of the no-cloning theorem, which is a fundamental law of quantum physics and the backbone of security for quantum communications. Although perfect copies are prohibited, a quantum state may be copied with maximal accuracy via various optimal cloning schemes. Optimal quantum cloning, which lies at the border of the physical limit imposed by the no-signaling theorem and the Heisenberg uncertainty principle, has been experimentally realized for low-dimensional photonic states. However, an increase in the dimensionality of quantum systems is greatly beneficial to quantum computation and communication protocols. Nonetheless, no experimental demonstration of optimal cloning machines has hitherto been shown for high-dimensional quantum systems. We perform optimal cloning of high-dimensional photonic states by means of the symmetrization method. We show the universality of our technique by conducting cloning of numerous arbitrary input states and fully characterize our cloning machine by performing quantum state tomography on cloned photons. In addition, a cloning attack on a Bennett and Brassard (BB84) quantum key distribution protocol is experimentally demonstrated to reveal the robustness of high-dimensional states in quantum cryptography.

  5. Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

    International Nuclear Information System (INIS)

    Hadj Alouane, M. H.; Ilahi, B.; Maaref, H.; Salem, B.; Aimez, V.; Morris, D.; Turala, A.; Regreny, P.; Gendry, M.

    2010-01-01

    We report on the effects of the As/P intermixing induced by phosphorus ion implantation in InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For nonintermixed QDas, usual temperature-dependent PL properties characterized by a monotonic redshift in the emission band and a continual broadening of the PL linewidth as the temperature increases, are observed. For intermediate ion implantation doses, the inhomogeneous intermixing enhances the QDas size dispersion and the enlarged distribution of carrier confining potential depths strongly affects the temperature-dependent PL properties below 180 K. An important redshift in the PL emission band occurs between 10 and 180 K which is explained by a redistribution of carriers among the different intermixed QDas of the ensemble. For higher implantation doses, the homogeneous intermixing reduces the broadening of the localized QDas state distribution and the measured linewidth temperature behavior matches that of the nonintermixed QDas. An anomalous temperature-dependent emission energy behavior has been observed for extremely high implantation doses, which is interpreted by a possible QDas dissolution.

  6. Chemical sensitivity of InP/In0.48Ga0.52P surface quantum dots studied by time-resolved photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    De Angelis, Roberta; Casalboni, Mauro; De Matteis, Fabio; Hatami, Fariba; Masselink, William T.; Zhang, Hong; Prosposito, Paolo

    2015-01-01

    InP/InGaP surface quantum dots represent an attractive material for optical chemical sensors since they show a remarkable near infra-red emission at room temperature, whose intensity increases rapidly and reversibly depending on the composition of the environmental atmosphere. We show here their emission properties by time resolved photoluminescence spectroscopy investigation. Photoluminescence transients with and without chemical solvent vapours (methanol, clorophorm, acetone and water) were fitted with a 3-exponential decay law with times of about 0.5 ns, 2 ns and 7 ns. The measurements revealed a weak effect on clorophorm, acetone and water, while the initial decay time of InP surface quantum dots increases (up to 15%) upon methanol vapour exposure, indicating that the organic molecules efficiently saturate QD non-radiative surface states. - Highlights: • InP SQDs emission depends on the presence of solvent vapours in the atmosphere. • TR photoluminescence transients were fitted with a 3-exponential decay law. • The initial decay time increases (up to 15%) upon methanol vapour exposure. • Organic molecules efficiently saturate QD non-radiative surface states.

  7. Photoluminescence study of the nitrogen content effect on GaAs/GaAs1-xNx/GaAs/AlGaAs: (Si) quantum well

    International Nuclear Information System (INIS)

    Hamdouni, A.; Bousbih, F.; Ben bouzid, S.; Aloulou, S.; Harmand, J.C.; Chtourou, R.

    2008-01-01

    We study the effect of nitrogen content in modulation-doped GaAs/GaAs 1-x N x /GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs 1-x N x /GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model

  8. Photoluminescence of anti-modulation doped near-surface GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma

    CERN Document Server

    Bumaj, Y A; Goldkhan, R; Shtajn, N; Golombek, A; Nakov, V; Cheng, T S

    2002-01-01

    The anti-modulation Si-doped GaAs/AlGaAs structures with near-surface single quantum wells grown by molecular-beam epitaxy were exposed to hydrogen plasma at 260 deg C and investigated by low-temperature photoluminescence, photoluminescence excitation and photoreflectance spectroscopy. After hydrogenation, the quenching of the exciton luminescence for the below AlGaAs band gap excitation due to the increase of electric field in the structure has been observed. The effect is consistent with unpinning of Fermi level from mid gap of nominally undoped (p-type) GaAs cap layer due to passivation of surface states by hydrogen without neutralization of shallow impurities in the epilayers

  9. High quantum yield graphene quantum dots decorated TiO_2 nanotubes for enhancing photocatalytic activity

    International Nuclear Information System (INIS)

    Qu, Ailan; Xie, Haolong; Xu, Xinmei; Zhang, Yangyu; Wen, Shengwu; Cui, Yifan

    2016-01-01

    Highlights: • High concentration yellow GQDs and TiO_2 nanotubes were achieved by a simple and green method. • High quantum yield GQDs enhanced the photodegradation capacity of TiO_2 nanotube. • The catalytic performance of GQDs/TiO_2 depends on the GQDs loading. • The improved photocatalytic activity of GQDs/TiO_2 was attributed to three aspects. - Abstract: Graphene quantum dots (GQDs) with high quantum yield (about 23.6% at an excitation wavelength of 320 nm) and GQDs/TiO_2 nanotubes (GQDs/TiO_2 NTs) composites were achieved by a simple hydrothermal method at low temperature. Photoluminescence characterization showed that the GQDs exhibited the down-conversion PL features at excitation from 300 to 420 nm and up-conversion photoluminescence in the range of 600–800 nm. The photocatalytic activity of prepared GQDs/TiO_2 NTs composites on the degradation of methyl orange (MO) was significantly enhanced compared with that of pure TiO_2 nanotubes (TiO_2 NTs). For the composites coupling with 1.5%, 2.5% and 3.5% GQDs, the degradation of MO after 20 min irradiation under UV–vis light irradiation (λ = 380–780 nm) were 80.52%, 94.64% and 51.91%, respectively, which are much higher than that of pure TiO_2 NTs (35.41%). It was inferred from the results of characterization that the improved photocatalytic activity of the GQDs/TiO_2 NTs composites was attributed to the synergetic effect of up-conversion properties of the GQDs, enhanced visible light absorption and efficient separation of photogenerated electron-holes of the GQDs/TiO_2 composite.

  10. Photoluminescence of ultra-high molecular weight polyethylene modified by fast atom bombardment

    International Nuclear Information System (INIS)

    Toth, S.; Fuele, M.; Veres, M.; Pocsik, I.; Koos, M.; Toth, A.; Ujvari, T.; Bertoti, I.

    2006-01-01

    An increase in the application potential of the ultra-high molecular weight polyethylene (UHMWPE) may be achieved by producing a hard, wear resistant carbonaceous modified surface layer on it. In this study the surface of UHMWPE samples was treated by 1 keV N, H and He fast atom bombardment (FAB) to obtain amorphous carbon surface layer which produces an enhancement of microhardness. The untreated and FAB-modified samples were investigated by photoluminescence, infrared, Raman and optical absorption spectroscopy. The FAB-treatment caused a nearly complete disappearance of the characteristic luminescence bands of UHMWPE (at 335, 351, 363 and 381 nm), the appearance of new bands at 459 and 495 nm due to the formation of new recombination levels in the FAB-treated samples. The remarkable decrease in integrated luminescence intensity indicates the appearance of new non-radiative recombination levels caused by FAB treatment. Structural modifications in FAB treated samples result in the development of structural arrangement containing sp 2 bonded carbon sites in rings or chains of different sizes and the electronic levels corresponding to these structural elements are situated in the forbidden gap in the electronic density of states which brings forth the observed changes of the photoluminescence properties

  11. Influence of fabrication parameter on the nanostructure and photoluminescence of highly doped p-porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shaoyuan [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Ma, Wenhui, E-mail: mwhsilicon@163.com [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Zhou, Yang, E-mail: zhouyangnano@163.com [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Chen, Xiuhua [Faculty of Physical Science and Technology, Yunnan University, Kunming 650091 (China); Ma, Mingyu [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Xiao, Yongyin [Faculty of Physical Science and Technology, Yunnan University, Kunming 650091 (China); Xu, Yaohui [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2014-02-15

    Porous silicon (PS) was prepared by anodizing highly doped p-type silicon in the solution of H{sub 2}O/ethanol/HF. The effects of key fabrication parameters (HF concentration, etching time and current density) on the nanostructure of PS were carefully investigated by AFM, SEM and TEM characterization. According to the experimental results, a more full-fledged model was developed to explain the crack behaviors on PS surface. The photoluminescence (PL) of resulting PS was studied by a fluorescence spectrophotometer and the results show that PL peak positions shift to shorter wavelength with the increasing current density, anodisation time and dilution of electrolyte. The PL spectra blue shift of the sample with higher porosity is confirmed by HRTEM results that the higher porosity results in smaller Si nanocrystals. A linear model (λ{sub PL/nm}=620.3–0.595P, R=0.905) was established to describe the correlation between PL peak positions and porosity of PS. -- Highlights: • The effect of fabrication parameter on the nanostructure of PS is investigated. • The influence of nanostructure on the photoluminescence behaviors is studied • A full-fledged model for expounding the crack behaviors of PS is presented. • The correlation between the porosity and PL peak blue shift is described by a linear model.

  12. Exciton lifetime and spin dynamics in type-I In1−xAlxAs/Ga0.67Al0.33As quantum dots: Photoluminescence and pump-probe experiments

    International Nuclear Information System (INIS)

    Ben Daly, A.; Bernardot, F.; Barisien, T.; Galopin, E.; Lemaître, A.; Maaref, M.A.; Testelin, C.

    2015-01-01

    The exciton lifetime and spin relaxation have been studied in self-assembled In 1−x Al x As/Ga 0.67 Al 0.33 As quantum dots (QDs). Time-resolved photoluminescence and resonant pump-probe measurements were performed, at variable temperature and for different QD aluminium compositions. At low temperature, a long exciton-spin relaxation time has been measured, in agreement with the QD zero-dimensional confinement and the quenching of the relaxation mechanisms. The existence of a quasi-2D regime, in sample with a high QD density, has been observed. The importance of thermally-activated processes toward excited states is also evidenced, for QDs with different compositions and sizes. - Highlights: • The exciton lifetime and spin relaxation have been studied in In 1−x Al x As/Ga 0.67 Al 0.33 As quantum dot (QD). • Time-resolved photoluminescence (TRPL) and pump-probe measurements were performed, at variable temperature and for different QD aluminium compositions. • From the PL decay time, several thermal activation processes, related to 0D or 2D regime, or dependending on collective mechanisms. • The importance of thermal activated processes toward excited states is also evidenced, for QD with different compositions and sizes

  13. High-speed quantum networking by ship

    Science.gov (United States)

    Devitt, Simon J.; Greentree, Andrew D.; Stephens, Ashley M.; van Meter, Rodney

    2016-11-01

    Networked entanglement is an essential component for a plethora of quantum computation and communication protocols. Direct transmission of quantum signals over long distances is prevented by fibre attenuation and the no-cloning theorem, motivating the development of quantum repeaters, designed to purify entanglement, extending its range. Quantum repeaters have been demonstrated over short distances, but error-corrected, global repeater networks with high bandwidth require new technology. Here we show that error corrected quantum memories installed in cargo containers and carried by ship can provide a exible connection between local networks, enabling low-latency, high-fidelity quantum communication across global distances at higher bandwidths than previously proposed. With demonstrations of technology with sufficient fidelity to enable topological error-correction, implementation of the quantum memories is within reach, and bandwidth increases with improvements in fabrication. Our approach to quantum networking avoids technological restrictions of repeater deployment, providing an alternate path to a worldwide Quantum Internet.

  14. Ratiometric two-photon excited photoluminescence of quantum dots triggered by near-infrared-light for real-time detection of nitric oxide release in situ

    International Nuclear Information System (INIS)

    Jin, Hui; Gui, Rijun; Sun, Jie; Wang, Yanfeng

    2016-01-01

    Probe-donor integrated nanocomposites were developed from conjugating silica-coated Mn"2"+:ZnS quantum dots (QDs) with MoS_2 QDs and photosensitive nitric oxide (NO) donors (Fe_4S_3(NO)_7"−, RBS). Under excitation with near-infrared (NIR) light at 808 nm, the Mn"2"+:ZnS@SiO_2/MoS_2-RBS nanocomposites showed the dual-emissive two-photon excited photoluminescence (TPEPL) that induced RBS photolysis to release NO in situ. NO caused TPEPL quenching of Mn"2"+:ZnS QDs, but it produced almost no impact on the TPEPL of MoS_2 QDs. Hence, the nanocomposites were developed as a novel QDs-based ratiometric TPEPL probe for real-time detection of NO release in situ. The ratiometric TPEPL intensity is nearly linear (R"2 = 0.9901) with NO concentration in the range of 0.01∼0.8 μM, which corresponds to the range of NO release time (0∼15 min). The detection limit was calculated to be approximately 4 nM of NO. Experimental results confirmed that this novel ratiometric TPEPL probe possessed high selectivity and sensitivity for the detection of NO against potential competitors, and especially showed high detection performance for NIR-light triggered NO release in tumor intracellular microenvironments. These results would promote the development of versatile probe-donor integrated systems, also providing a facile and efficient strategy to real-time detect the highly controllable drug release in situ, especially in physiological microenvironments. - Highlights: • Mn"2"+:ZnS@SiO_2/MoS_2-RBS nanocomposites were developed as a novel ratiometric two-photon excited fluorescence probe. • This probe could conduct real-time detection of nitric oxide release in situ. • High feasibility of this probe was confirmed in tumor intracellular microenvironments.

  15. Characteristics and performance of the Sunna high dose dosemeter using green photoluminescence and UV absorption readout methods

    Energy Technology Data Exchange (ETDEWEB)

    Miller, S.D.; Murphy, M.K.; Tinker, M.R.; Kovacs, A.; McLaughlin, W

    2002-07-01

    Growth in the use of ionising radiation for medical sterilisation and the potential for wide-scale international food irradiation have created the need for robust, mass-producible, inexpensive, and highly accurate radiation dosemeters. The Sunna dosemeter, lithium fluoride injection-moulded in a polyethylene matrix, can be read out using either green photoluminescence or ultraviolet (UV) absorption. The Sunna dosemeter can be mass-produced inexpensively with high precision. Both the photoluminescent and the UV absorption reader are simple and inexpensive. Both methods of analysis display negligible humidity effects, minimal dose rate dependence, acceptable post-irradiation effects, and permit measurements with a precision of nearly 1% 1s. The UV method shows negligible irradiation temperature effects from -30 deg. C to +60 deg. C. The photoluminescence method shows negligible irradiation temperature effects above room temperature for sterilisation dose levels and above. The dosimetry characteristics of these two readout methods are presented along with performance data in commercial sterilisation facilities. (author)

  16. High resolution STEM of quantum dots and quantum wires

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima

    2013-01-01

    This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...

  17. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    International Nuclear Information System (INIS)

    Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

    2010-01-01

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  18. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2010-02-15

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  19. Observation of Diamond Nitrogen-Vacancy Center Photoluminescence under High Vacuum in a Magneto-Gravitational Trap

    Science.gov (United States)

    Ji, Peng; Hsu, Jen-Feng; Lewandowski, Charles W.; Dutt, M. V. Gurudev; D'Urso, Brian

    2016-05-01

    We report the observation of photoluminescence from nitrogen-vacancy (NV) centers in diamond nanocrystals levitated in a magneto-gravitational trap. The trap utilizes a combination of strong magnetic field gradients and gravity to confine diamagnetic particles in three dimensions. The well-characterized NV centers in trapped diamond nanocrystals provide an ideal built-in sensor to measure the trap magnetic field and the temperature of the trapped diamond nanocrystal. In the future, the NV center spin state could be coupled to the mechanical motion through magnetic field gradients, enabling in an ideal quantum interface between NV center spin and the mechanical motion. National Science Foundation, Grant No. 1540879.

  20. A job for quantum dots: use of a smartphone and 3D-printed accessory for all-in-one excitation and imaging of photoluminescence.

    Science.gov (United States)

    Petryayeva, Eleonora; Algar, W Russ

    2016-04-01

    Point-of-care (POC) diagnostic technologies are needed to improve global health and smartphones are a prospective platform for these technologies. While many fluorescence or photoluminescence-based smartphone assays have been reported in the literature, common shortcomings are the requirement of an excitation light source external to the smartphone and complicated integration of that excitation source with the smartphone. Here, we show that the photographic flash associated with the smartphone camera can be utilized to enable all-in-one excitation and imaging of photoluminescence (PL), thus eliminating the need for an excitation light source external to the smartphone. A simple and low-cost 3D-printed accessory was designed to create a dark environment and direct excitation light from the smartphone flash onto a sample. Multiple colors and compositions of semiconductor quantum dot (QD) were evaluated as photoluminescent materials for all-in-one smartphone excitation and imaging of PL, and these were compared with fluorescein and R-phycoerythrin (R-PE), which are widely utilized molecular and protein materials for fluorescence-based bioanalysis. The QDs were found to exhibit much better brightness and have the best potential for two-color detection. A model protein binding assay with a sub-microgram per milliliter detection limit and a Förster resonance energy transfer (FRET) assay for proteolytic activity were demonstrated, including imaging with serum as a sample matrix. In addition, FRET within tandem conjugates of a QD donor and fluorescent dye acceptor enabled smartphone detection of dye fluorescence that was otherwise unobservable without the QD to enhance its brightness. The ideal properties of photoluminescent materials for all-in-one smartphone excitation and imaging are discussed in the context of several different materials, where QDs appear to be the best overall material for this application.

  1. Bidentate Ligand-passivated CsPbI3 Perovskite Nanocrystals for Stable Near-unity Photoluminescence Quantum Yield and Efficient Red Light-emitting Diodes

    KAUST Repository

    Pan, Jun

    2017-12-17

    Although halide perovskite nanocrystals (NCs) are promising materials for optoelectronic devices, they suffer severely from chemical and phase instabilities. Moreover, the common capping ligands like oleic acid and oleylamine that encapsulate the NCs will form an insulating layer, precluding their utility in optoelectronic devices. To overcome these limitations, we develop a post-synthesis passivation process for CsPbI3 NCs by using a bidentate ligand, namely 2,2’-Iminodibenzoic acid. Our passivated NCs exhibit narrow red photoluminescence with exceptional quantum yield (close to unity) and substantially improved stability. The passivated NCs enabled us to realize red light-emitting diodes (LEDs) with 5.02% external quantum efficiency and 748 cd/m2 luminance, surpassing by far LEDs made from the non-passivated NCs.

  2. Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

    Energy Technology Data Exchange (ETDEWEB)

    Mrowiński, P.; Misiewicz, J.; Sęk, G. [Laboratory for Optical Spectroscopy of Nanostructures, Division of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław (Poland); Tarnowski, K.; Olszewski, J.; Urbańczyk, W. [Division of Optics and Photonics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław (Poland); Somers, A.; Kamp, M. [Technische Physik & W. C. Röntgen-Center for Complex Material Systems, Universität Würzburg, Würzburg Germany (Germany); Reithmaier, J. P. [Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel (Germany); Machnikowski, P. [Division of Theoretical Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław (Poland)

    2016-08-21

    Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in terms of controlling the polarization anisotropy by altering the shape of the processed sub-micrometer mesa structures. Photoluminescence has been measured from exemplary single quantum dashes emitting around 1.3 and 1.55 μm and placed inside rectangular mesas of various orientation, asymmetry, and sizes. The detected degree of linear polarization of bright exciton emission ranges from −0.1 to ca. 0.55, compared to 0.25 for dashes in unaltered or isotropic in-plane dielectric surrounding. These results are interpreted by numerical simulations using an emitter coupled with a single optical mode in such a mesa and outgoing in the direction normal to the sample surface.

  3. Photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

    Energy Technology Data Exchange (ETDEWEB)

    Lopez, S.Y. [Grupo de Educacion en Ciencias Experimentales y Matematicas-GECEM, Facultad de Educacion, Universidad de Antioquia, AA 1226 Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.c [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)

    2009-12-15

    The photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

  4. Bidentate Ligand-passivated CsPbI3 Perovskite Nanocrystals for Stable Near-unity Photoluminescence Quantum Yield and Efficient Red Light-emitting Diodes

    KAUST Repository

    Pan, Jun; Shang, Yuequn; Yin, Jun; de Bastiani, Michele; Peng, Wei; Dursun, Ibrahim; Sinatra, Lutfan; El-Zohry, Ahmed M.; Hedhili, Mohamed N.; Emwas, Abdul-Hamid M.; Mohammed, Omar F.; Ning, Zhijun; Bakr, Osman

    2017-01-01

    Although halide perovskite nanocrystals (NCs) are promising materials for optoelectronic devices, they suffer severely from chemical and phase instabilities. Moreover, the common capping ligands like oleic acid and oleylamine that encapsulate the NCs will form an insulating layer, precluding their utility in optoelectronic devices. To overcome these limitations, we develop a post-synthesis passivation process for CsPbI3 NCs by using a bidentate ligand, namely 2,2’-Iminodibenzoic acid. Our passivated NCs exhibit narrow red photoluminescence with exceptional quantum yield (close to unity) and substantially improved stability. The passivated NCs enabled us to realize red light-emitting diodes (LEDs) with 5.02% external quantum efficiency and 748 cd/m2 luminance, surpassing by far LEDs made from the non-passivated NCs.

  5. Photoluminescence energy transitions in GaAs-Ga1-xAlxAs double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

    International Nuclear Information System (INIS)

    Lopez, S.Y.; Mora-Ramos, M.E.; Duque, C.A.

    2009-01-01

    The photoluminescence energy transitions in GaAs-Ga 1-x Al x As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

  6. High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method.

    Science.gov (United States)

    Yang, Weimin; Yang, Huafang; Ding, Wenhao; Zhang, Bing; Zhang, Le; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-11-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor. Copyright © 2016 Elsevier B.V. All rights reserved.

  7. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-08-31

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

  8. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    International Nuclear Information System (INIS)

    Woscholski, R.; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-01-01

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C

  9. High Quantum Yield Blue Emission from Lead-Free Inorganic Antimony Halide Perovskite Colloidal Quantum Dots.

    Science.gov (United States)

    Zhang, Jian; Yang, Ying; Deng, Hui; Farooq, Umar; Yang, Xiaokun; Khan, Jahangeer; Tang, Jiang; Song, Haisheng

    2017-09-26

    Colloidal quantum dots (QDs) of lead halide perovskite have recently received great attention owing to their remarkable performances in optoelectronic applications. However, their wide applications are hindered from toxic lead element, which is not environment- and consumer-friendly. Herein, we utilized heterovalent substitution of divalent lead (Pb 2+ ) with trivalent antimony (Sb 3+ ) to synthesize stable and brightly luminescent Cs 3 Sb 2 Br 9 QDs. The lead-free, full-inorganic QDs were fabricated by a modified ligand-assisted reprecipitation strategy. A photoluminescence quantum yield (PLQY) was determined to be 46% at 410 nm, which was superior to that of other reported halide perovskite QDs. The PL enhancement mechanism was unraveled by surface composition derived quantum-well band structure and their large exciton binding energy. The Br-rich surface and the observed 530 meV exciton binding energy were proposed to guarantee the efficient radiative recombination. In addition, we can also tune the inorganic perovskite QD (Cs 3 Sb 2 X 9 ) emission wavelength from 370 to 560 nm via anion exchange reactions. The developed full-inorganic lead-free Sb-perovskite QDs with high PLQY and stable emission promise great potential for efficient emission candidates.

  10. Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingmin, E-mail: konglm@qq.com [School of Marine Science and Technology, Zhejiang Ocean University, Zhoushan 316000 (China); Sun, Wei [SEM School of Electromechanical Engineering, Weifang Engineering Vocational College, Qingzhou 262500 (China); Feng, Zhe Chuan, E-mail: zcfeng@nut.edu.tw [Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan (China); Xie, Sheng [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian [Department of Physics, Zhejiang Ocean University, Zhoushan 316000 (China); Wu, Zhengyun [Department of Physics, Xiamen University, Xiamen 361005 China (China)

    2014-07-01

    Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs. - Highlights: • InAs quantum dots (QDs) were grown on GaAs. • A thin InAlAs layer was grown on InAs QDs. • Temperature dependent photoluminescence (PL) and time-resolved PL were carried out. • Both a redshift and a double exponential decay of PL emission were generated by the InAlAs layer.

  11. Highly sensitive and selective detection of dopamine using one-pot synthesized highly photoluminescent silicon nanoparticles.

    Science.gov (United States)

    Zhang, Xiaodong; Chen, Xiaokai; Kai, Siqi; Wang, Hong-Yin; Yang, Jingjing; Wu, Fu-Gen; Chen, Zhan

    2015-03-17

    A simple and highly efficient method for dopamine (DA) detection using water-soluble silicon nanoparticles (SiNPs) was reported. The SiNPs with a high quantum yield of 23.6% were synthesized by using a one-pot microwave-assisted method. The fluorescence quenching capability of a variety of molecules on the synthesized SiNPs has been tested; only DA molecules were found to be able to quench the fluorescence of these SiNPs effectively. Therefore, such a quenching effect can be used to selectively detect DA. All other molecules tested have little interference with the dopamine detection, including ascorbic acid, which commonly exists in cells and can possibly affect the dopamine detection. The ratio of the fluorescence intensity difference between the quenched and unquenched cases versus the fluorescence intensity without quenching (ΔI/I) was observed to be linearly proportional to the DA analyte concentration in the range from 0.005 to 10.0 μM, with a detection limit of 0.3 nM (S/N = 3). To the best of our knowledge, this is the lowest limit for DA detection reported so far. The mechanism of fluorescence quenching is attributed to the energy transfer from the SiNPs to the oxidized dopamine molecules through Förster resonance energy transfer. The reported method of SiNP synthesis is very simple and cheap, making the above sensitive and selective DA detection approach using SiNPs practical for many applications.

  12. Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Y.; Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn; Chen, X. Y.; Xi, S. P.; Du, B.; Ma, Y. J. [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2015-11-23

    We report the effect of Bi surfactant on the properties of highly strained InAs/InGaAs triangular quantum wells grown on InP substrates. Reduced surface roughness, improved heterostructure interfaces and enhanced photoluminescence intensity at 2.2 μm are observed by moderate Bi-mediated growth. The nonradiative processes are analysed based on temperature-dependent photoluminescence. It is confirmed that Bi incorporation is insignificant in the samples, whereas excessive Bi flux during the growth results in deteriorated performance. The surfactant effect of Bi is promising to improve InP-based highly strained structures while the excess of Bi flux needs to be avoided.

  13. Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Kundys, D., E-mail: dmytro.kundys@manchester.ac.uk; Sutherland, D.; Badcock, T. J.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S. [Photonics Theory group, Tyndall National Institute, Lee Maltings, Cork (Ireland); Oehler, F.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS (United Kingdom)

    2014-03-21

    We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum.

  14. Photoluminescence measurement of polycrystalline CdTe made of high purity source material

    Energy Technology Data Exchange (ETDEWEB)

    Hempel, Hannes; Kraft, Christian; Heisler, Christoph; Geburt, Sebastian; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, Friedrich Schiller Universitaet Jena, Helmholtzweg 3, 07743 Jena (Germany)

    2012-07-01

    CdTe is a common material for thin film solar cells. However, the mainly used CdTe source material is known to contain a high number of intrinsic defects and impurities. In this work we investigate the defect structure of high purity CdTe by means of Photoluminescence, which is a common method to detect the energy levels of defects in the band gap of semiconductors. We used a 633 nm HeNe-Laser at sample temperatures of 8 K. The examined samples were processed in a new vacuum system based on the PVD method. They yield significantly different spectra on as-grown samples compared to those measured on samples which are grown by the standard process, since the double peak at 1.55 eV was hardly detectable and the A-center correlated transition vanished. Instead a peak at 1.50 eV with pronounced phonon coupling was observed. The 1.50 eV peak is known from other measurements but has not been characterized so far. The intention of this work is to characterize this new feature and the influence of post deposition treatments of the CdTe layers on the PL spectra.

  15. Ratiometric two-photon excited photoluminescence of quantum dots triggered by near-infrared-light for real-time detection of nitric oxide release in situ

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Hui [Shandong Sino-Japanese Center for Collaborative Research of Carbon Nanomaterials, Collaborative Innovation Center for Marine Biomass Fiber Materials and Textiles, College of Chemistry and Chemical Engineering, Laboratory of Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Shandong 266071 (China); Gui, Rijun, E-mail: guirijun@qdu.edu.cn [Shandong Sino-Japanese Center for Collaborative Research of Carbon Nanomaterials, Collaborative Innovation Center for Marine Biomass Fiber Materials and Textiles, College of Chemistry and Chemical Engineering, Laboratory of Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Shandong 266071 (China); Sun, Jie; Wang, Yanfeng [Institute of Materia Medica, Shandong Academy of Medical Sciences, Jinan 250062 (China)

    2016-05-30

    Probe-donor integrated nanocomposites were developed from conjugating silica-coated Mn{sup 2+}:ZnS quantum dots (QDs) with MoS{sub 2} QDs and photosensitive nitric oxide (NO) donors (Fe{sub 4}S{sub 3}(NO){sub 7}{sup −}, RBS). Under excitation with near-infrared (NIR) light at 808 nm, the Mn{sup 2+}:ZnS@SiO{sub 2}/MoS{sub 2}-RBS nanocomposites showed the dual-emissive two-photon excited photoluminescence (TPEPL) that induced RBS photolysis to release NO in situ. NO caused TPEPL quenching of Mn{sup 2+}:ZnS QDs, but it produced almost no impact on the TPEPL of MoS{sub 2} QDs. Hence, the nanocomposites were developed as a novel QDs-based ratiometric TPEPL probe for real-time detection of NO release in situ. The ratiometric TPEPL intensity is nearly linear (R{sup 2} = 0.9901) with NO concentration in the range of 0.01∼0.8 μM, which corresponds to the range of NO release time (0∼15 min). The detection limit was calculated to be approximately 4 nM of NO. Experimental results confirmed that this novel ratiometric TPEPL probe possessed high selectivity and sensitivity for the detection of NO against potential competitors, and especially showed high detection performance for NIR-light triggered NO release in tumor intracellular microenvironments. These results would promote the development of versatile probe-donor integrated systems, also providing a facile and efficient strategy to real-time detect the highly controllable drug release in situ, especially in physiological microenvironments. - Highlights: • Mn{sup 2+}:ZnS@SiO{sub 2}/MoS{sub 2}-RBS nanocomposites were developed as a novel ratiometric two-photon excited fluorescence probe. • This probe could conduct real-time detection of nitric oxide release in situ. • High feasibility of this probe was confirmed in tumor intracellular microenvironments.

  16. Photoluminescence of highly compensated GaAs doped with high concentration of Ge

    Science.gov (United States)

    Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

    1999-12-01

    We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

  17. High-resolution photoluminescence electro-modulation microscopy by scanning lock-in

    Science.gov (United States)

    Koopman, W.; Muccini, M.; Toffanin, S.

    2018-04-01

    Morphological inhomogeneities and structural defects in organic semiconductors crucially determine the charge accumulation and lateral transport in organic thin-film transistors. Photoluminescence Electro-Modulation (PLEM) microscopy is a laser-scanning microscopy technique that relies on the modulation of the thin-film fluorescence in the presence of charge-carriers to image the spatial distribution of charges within the active organic semiconductor. Here, we present a lock-in scheme based on a scanning beam approach for increasing the PLEM microscopy resolution and contrast. The charge density in the device is modulated by a sinusoidal electrical signal, phase-locked to the scanning beam of the excitation laser. The lock-in detection scheme is achieved by acquiring a series of images with different phases between the beam scan and the electrical modulation. Application of high resolution PLEM to an organic transistor in accumulation mode demonstrates its potential to image local variations in the charge accumulation. A diffraction-limited precision of sub-300 nm and a signal to noise ratio of 21.4 dB could be achieved.

  18. Photoluminescence and reflectivity studies of high energy light ions irradiated polymethyl methacrylate films

    Science.gov (United States)

    Bharti, Madhu Lata; Singh, Fouran; Ramola, R. C.; Joshi, Veena

    2017-11-01

    The self-standing films of non-conducting polymethyl methacrylate (PMMA) were irradiated in vacuum using high energy light ions (HELIs) of 50 MeV Lithium (Li+3) and 80 MeV Carbon (C+5) at various ion dose to induce the optical changes in the films. Upon HELI irradiation, films exhibit a significant enhancement in optical reflectivity at the highest dose. Interestingly, the photoluminescence (PL) emission band with green light at (514.5 nm) shows a noticeable increase in the intensity with increasing ion dose for both ions. However, the rate of increase in PL intensity is different for both HELI and can be correlated with the linear energy transfer by these ions in the films. Origin of PL is attributed to the formation of carbon cluster and hydrogenated amorphous carbon in the polymer films. HAC clusters act as PL active centres with optical reflectivity. Most of the harmful radiation like UV are absorbed by the material and is becoming opaque after irradiation and this PL active material are useful in fabrication of optoelectronic devices, UV-filter, back-lit components in liquid crystal display systems, micro-components for integrate optical circuits, diffractive elements, advanced materials and are also applicable to the post irradiation laser treatment by means of ion irradiation.

  19. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

    International Nuclear Information System (INIS)

    Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, L.A.; Watkins, S.P.

    2016-01-01

    Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

  20. Investigation of the photoluminescence properties of composite optical resins containing high lanthanide content

    International Nuclear Information System (INIS)

    Wang Dongmei; Wang Fuxiang; Peng Weixian

    2012-01-01

    Novel composite optical resins with high lanthanide content have been synthesized through a free radical copolymerization of methacrylic acid (MA), styrene (St) and Eu(DBM) 3 ·H 2 O nanocrystals. We characterized the structure, the thermal properties, dimensions and photoluminescence properties of Eu(DBM) 3 ·H 2 O nanocrystals. Our results indicated that the diameters of the Eu(DBM) 3 ·H 2 O nanocrystals were within the range of 30 to 300 nm. These materials exhibited characteristic europium ion luminescence. The europium-bearing nanocrystals and were then incorporated into the copolymer systems of MA/St and luminescence functional optical resins with high lanthanide content (50 wt%) were obtained. The combination of these particles and optical resins is facile because the diameter of Eu(DBM) 3 ·H 2 O is decreased. These copolymer-based optical resins not only possess good transparency and mechanical performance, but also exhibit an intense narrow band emission of lanthanide complexes and longer fluorescence lifetimes under UV excitation at room temperature. - Highlights: ► Novel composite optical resins with high lanthanide content have been synthesized. ► The Eu(DBM) 3 ·H 2 O nanocrystals were within the range of 30 to 300 nm. ► Fluorescent resins with high lanthanide content (50 wt%) were obtained. ► Resins exhibit intense emission of lanthanide and longer fluorescence lifetimes. ► Variety properties of Eu(DBM) 3 ·H 2 O nanocrystals were characterized.

  1. Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Schade, L.; Schwarz, U.T. [Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79108 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, 79108 Freiburg (Germany); Wernicke, T. [Institute of Solid State Physics, Technical University, Hardenbergstrasse 36, 10623 Berlin (Germany); Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technical University, Hardenbergstrasse 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany)

    2011-03-15

    Partial or full linear polarization is characteristic for the spontaneous emission of light from semipolar and nonpolar InGaN quantum wells. This property is an implication of the crystalline anisotropy as a basic property of the wurtzite structure. The influence of this anisotropy on the band structure and the transition matrix elements was calculated by a k.p-method for arbitrary quantum well orientations with respect to the c-axis; results are shown here in detail. Optical polarization is a direct consequence of a broken symmetry, mainly affecting the transition matrix elements from the conduction to the valence bands. Furthermore, the strain of the InGaN quantum well strongly depends on the crystal orientation of the substrate, resulting in a valence band mixing. The composition of the eigenfunctions has emerged to be most important for the polarization dependence of strained semipolar and nonpolar InGaN QW. The matrix elements, in combination with the thermal occupation of the bands, determine the polarization of the spontaneously emitted light. Our photoluminescence measurements of nonpolar QW match well with this model. However, in contrast to calculations with standard band parameters, the two topmost subbands show a larger separation in the emitted energy. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

    Energy Technology Data Exchange (ETDEWEB)

    Shimosako, N., E-mail: n-shimosako@sophia.jp; Inose, Y.; Satoh, H.; Kinjo, K.; Nakaoka, T.; Oto, T. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Kishino, K.; Ema, K. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Sophia Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

    2015-11-07

    We have measured and analyzed the carrier-density dependence of photoluminescence (PL) spectra and the PL efficiency of InGaN/GaN multiple quantum wells in nanocolumns and in a thin film over a wide excitation range. The localized states parameters, such as the tailing parameter, density and size of the localized states, and the mobility edge density are estimated. The spectral change and reduction of PL efficiency are explained by filling of the localized states and population into the extended states around the mobility edge density. We have also found that the nanocolumns have a narrower distribution of the localized states and a higher PL efficiency than those of the film sample although the In composition of the nanocolumns is higher than that of the film.

  3. Polytypism and band alignment in ZnSe nanowires revealed by photoluminescence spectroscopy of embedded (Zn,Cd)Se quantum dots

    Science.gov (United States)

    Bieker, S.; Pfeuffer, R.; Kiessling, T.; Tarakina, N.; Schumacher, C.; Ossau, W.; Molenkamp, L. W.; Karczewski, G.

    2015-03-01

    We report on the optical characterization of single (Zn,Cd)Se quantum dots (QDs) embedded in vapor-liquid-solid-grown ZnSe nanowires (NWs). The temperature dependent quenching of the QD luminescence demonstrates that their electronic structure is comparable to that of self-assembled (Zn,Cd)Se QDs in ZnSe matrices. The photoluminescence excitation (PLE) spectrum of single nanowire QDs reveals the presence of both zinc blende (ZB) and wurtzite (WZ) crystal modifications of ZnSe in the NW shafts. PLE provides, therefore, a complementary technique to transmission electron microscopy imaging to reveal polytypism in ZnSe NWs. A transient quenching of the PL emission suggests a type II staggered band alignment at the ZB/WZ interface in our ZnSe NWs.

  4. In-plane magneto-photoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    KIM,YONGMIN; PERRY,C.H.; SIMMONS,JERRY A.; KLEM,JOHN F.

    2000-05-11

    In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.

  5. Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

    KAUST Repository

    Marcinkevičius, S.

    2014-09-15

    © 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

  6. Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ke; Ma, Wenquan, E-mail: wqma@semi.ac.cn; Huang, Jianliang; Zhang, Yanhua; Cao, Yulian; Huang, Wenjun; Luo, Shuai; Yang, Tao [Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, Beijing 100083 (China)

    2015-07-27

    We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.

  7. Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer

    Energy Technology Data Exchange (ETDEWEB)

    Thunert, Martin; Wieneke, Matthias; Dempewolf, Anja; Bertram, Frank; Dadgar, Armin; Krost, Alois; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany)

    2011-07-01

    A set of InGaN multi quantum well (MQW) samples grown by MOVPE on highly Si doped a-plane GaN on r-plane sapphire templates has been investigated using spatially resolved photoluminescence spectroscopy ({mu}-PL). The Si doping level of nominal about 10{sup 20} cm{sup -3} leads to three dimensionally grown crystallites mostly terminated by m-facets. The MQW thickness has been systematically varied from nominally 2.1 to 4.2 nm, as well as the InGaN growth temperature, which was varied from 760 C to 700 C. The growth of a-plane GaN based devices leads to a non-polar growth direction avoiding the polarization field affected Quantum-Confined-Stark-Effect. Spatially resolved PL studies show for all samples low near band edge (NBE) GaN emission intensity over the whole area under investigation accompanied by highly intense InGaN MQW emission for single crystallites. The MQW luminescence shows a systematic blueshift with increasing InGaN growth temperature due to lower In incorporation as well as a systematic redshift with increasing MQW thickness. Excitation power dependent spectra at 4 K as well as temperature dependent PL spectra will be presented.

  8. Quantum Sensing for High Energy Physics

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Zeeshan; et al.

    2018-03-29

    Report of the first workshop to identify approaches and techniques in the domain of quantum sensing that can be utilized by future High Energy Physics applications to further the scientific goals of High Energy Physics.

  9. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S. [Department of Electronic Science, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2014-01-28

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of

  10. Quantum well effect in bulk PbI(2) crystals revealed by the anisotropy of photoluminescence and Raman spectra.

    Science.gov (United States)

    Baltog, I; Baibarac, M; Lefrant, S

    2009-01-14

    On subjecting a bulk 2H-PbI(2) crystal to vacuum annealing at 500 K followed by a sudden cooling at liquid nitrogen temperature stacking faults are generated that separate distinct layers of nanometric thickness in which different numbers of I-Pb-I atomic layers are bundled together. Such structures, containing two, three, four, five etc I-Pb-I atomic layers, behave as quantum wells of different widths. The signature of such a transformation is given by a shift towards higher energies of the fundamental absorption edge, which is experimentally revealed by specific anisotropies in the photoluminescence and Raman spectra. The quantum confining effect is made visible by specific variations of a wide extra-excitonic band (G) at 2.06 eV that originates in the radiative recombination of carriers (electrons and holes), trapped on the surface defects. The excitation spectrum of the G band, with p polarized exciting light, reveals a fine structure comprised of narrow bands at 2.75, 2.64, 2.59 and 2.56 eV, which are associated with the PbI(2) quantum wells formed from two, three, four and five I-Pb-I atomic layers of 0.7 nm thickness. Regardless of the polarization state of the laser exciting light of 514.5 nm (2.41 eV), which is close to the band gap energy of PbI(2) (2.52 eV), the Raman scattering on bulk as-grown PbI(2) crystals has the character of a resonant process. For p polarized exciting light, the Raman scattering process on vacuum annealed PbI(2) becomes non-resonant. This originates from the quantum well structures generated inside the crystal, whose band gap energies are higher than the energy of the exciting light.

  11. The nature of the photoluminescence in amorphized PZT

    International Nuclear Information System (INIS)

    Silva, M.S.; Cilense, M.; Orhan, E.; Goes, M.S.; Machado, M.A.C.; Santos, L.P.S.; Paiva-Santos, C.O.; Longo, E.; Varela, J.A.; Zaghete, M.A.; Pizani, P.S.

    2005-01-01

    The polymeric precursor method was used to synthesize lead zirconate titanate powder (PZT). The crystalline powder was then amorphized by a high-energy ball milling process during 120 h. A strong photoluminescence emission was observed at room temperature for the amorphized PZT powder. The powders were characterized by XRD and the percentage of amorphous phase was calculated through Rietveld refinement. The microstructure for both phases was investigated by TEM. The optical gap was calculated through the Wood and Tauc method using the UV-Vis. data. Quantum mechanical calculations were carried out to give an interpretation of the photoluminescence in terms of electronic structure

  12. Photoluminescence of double core/shell infrared (CdSeTe)/ZnS quantum dots conjugated to Pseudo rabies virus antibodies

    Science.gov (United States)

    Torchynska, T. V.; Casas Espinola, J. L.; Jaramillo Gómez, J. A.; Douda, J.; Gazarian, K.

    2013-06-01

    Double core CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) have been studied by photoluminescence (PL) and Raman scattering methods in the non-conjugated state and after the conjugation to the Pseudo rabies virus (PRV) antibodies. The transformation of PL spectra, stimulated by the electric charge of antibodies, has been detected for the bioconjugated QDs. Raman scattering spectra are investigated with the aim to reveal the CdSeTe core compositions. The double core QD energy diagrams were designed that help to analyze the PL spectra and their transformation at the bioconjugation. It is revealed that the interface in double core QDs has the type II quantum well character that permits to explain the near IR optical transition (1.60 eV) in the double core QDs. It is shown that the essential transformation of PL spectra is useful for the study of QD bioconjugation with specific antibodies and can be a powerful technique in early medical diagnostics.

  13. Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

    CERN Document Server

    Shim, B R; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, S Y

    1999-01-01

    We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In sub x Ga sub 1 sub - sub x As layers with x<= 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing...

  14. Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

    International Nuclear Information System (INIS)

    Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun

    1999-01-01

    We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps

  15. High quantum yield graphene quantum dots decorated TiO{sub 2} nanotubes for enhancing photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Qu, Ailan, E-mail: qal67@163.com; Xie, Haolong; Xu, Xinmei; Zhang, Yangyu; Wen, Shengwu; Cui, Yifan

    2016-07-01

    Highlights: • High concentration yellow GQDs and TiO{sub 2} nanotubes were achieved by a simple and green method. • High quantum yield GQDs enhanced the photodegradation capacity of TiO{sub 2} nanotube. • The catalytic performance of GQDs/TiO{sub 2} depends on the GQDs loading. • The improved photocatalytic activity of GQDs/TiO{sub 2} was attributed to three aspects. - Abstract: Graphene quantum dots (GQDs) with high quantum yield (about 23.6% at an excitation wavelength of 320 nm) and GQDs/TiO{sub 2} nanotubes (GQDs/TiO{sub 2} NTs) composites were achieved by a simple hydrothermal method at low temperature. Photoluminescence characterization showed that the GQDs exhibited the down-conversion PL features at excitation from 300 to 420 nm and up-conversion photoluminescence in the range of 600–800 nm. The photocatalytic activity of prepared GQDs/TiO{sub 2} NTs composites on the degradation of methyl orange (MO) was significantly enhanced compared with that of pure TiO{sub 2} nanotubes (TiO{sub 2} NTs). For the composites coupling with 1.5%, 2.5% and 3.5% GQDs, the degradation of MO after 20 min irradiation under UV–vis light irradiation (λ = 380–780 nm) were 80.52%, 94.64% and 51.91%, respectively, which are much higher than that of pure TiO{sub 2} NTs (35.41%). It was inferred from the results of characterization that the improved photocatalytic activity of the GQDs/TiO{sub 2} NTs composites was attributed to the synergetic effect of up-conversion properties of the GQDs, enhanced visible light absorption and efficient separation of photogenerated electron-holes of the GQDs/TiO{sub 2} composite.

  16. Highly sensitive detection of ionizing radiations by a photoluminescent uranyl organic framework

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Jian; Wang, Yaxing; Liu, Wei; Yin, Xuemiao; Chen, Lanhua; Diwu, Juan; Chai, Zhifang; Wang, Shuao [School for Radiological and interdisciplinary Sciences (RAD-X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, Soochow University, Suzhou (China); Zou, Youming [High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui (China); Albrecht-Schmitt, Thomas E. [Department of Chemistry and Biochemistry, Florida State University, Tallahassee, FL (United States); Liu, Guokui [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL (United States)

    2017-06-19

    Precise detection of low-dose X- and γ-radiations remains a challenge and is particularly important for studying biological effects under low-dose ionizing radiation, safety control in medical radiation treatment, survey of environmental radiation background, and monitoring cosmic radiations. We report here a photoluminescent uranium organic framework, whose photoluminescence intensity can be accurately correlated with the exposure dose of X- or γ-radiations. This allows for precise and instant detection of ionizing radiations down to the level of 10{sup -4} Gy, representing a significant improvement on the detection limit of approximately two orders of magnitude, compared to other chemical dosimeters reported up to now. The electron paramagnetic resonance analysis suggests that with the exposure to radiations, the carbonyl double bonds break affording oxo-radicals that can be stabilized within the conjugated uranium oxalate-carboxylate sheet. This gives rise to a substantially enhanced equatorial bonding of the uranyl(VI) ions as elucidated by the single-crystal structure of the γ-ray irradiated material, and subsequently leads to a very effective photoluminescence quenching through phonon-assisted relaxation. The quenched sample can be easily recovered by heating, enabling recycled detection for multiple runs. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Quantum entanglement of high angular momenta.

    Science.gov (United States)

    Fickler, Robert; Lapkiewicz, Radek; Plick, William N; Krenn, Mario; Schaeff, Christoph; Ramelow, Sven; Zeilinger, Anton

    2012-11-02

    Single photons with helical phase structures may carry a quantized amount of orbital angular momentum (OAM), and their entanglement is important for quantum information science and fundamental tests of quantum theory. Because there is no theoretical upper limit on how many quanta of OAM a single photon can carry, it is possible to create entanglement between two particles with an arbitrarily high difference in quantum number. By transferring polarization entanglement to OAM with an interferometric scheme, we generate and verify entanglement between two photons differing by 600 in quantum number. The only restrictive factors toward higher numbers are current technical limitations. We also experimentally demonstrate that the entanglement of very high OAM can improve the sensitivity of angular resolution in remote sensing.

  18. Time-dependent photoluminescence spectroscopy as a tool to measure the ligand exchange kinetics on a quantum dot surface

    NARCIS (Netherlands)

    Koole, R.; Schapotschnikow, P.Z.; de Mello Donega, C.; Vlugt, T.J.H.; Meijerink, A.

    2008-01-01

    The exchange kinetics of native ligands that passivate CdSe quantum dots (hexadecylamine (HDA), trioctylphosphine oxide (TOPO), and trioctylphosphine (TOP)) by thiols is followed in situ. This is realized by measuring, in real-time, the decrease in emission intensity of the QDs upon addition of

  19. Surface plasmon inhibited photo-luminescence activation in CdSe/ZnS core-shell quantum dots

    Czech Academy of Sciences Publication Activity Database

    Chen, J.; Žídek, Karel; Abdellah, M.; Al-Marri, M.J.; Zheng, K.; Pullerits, T.

    2016-01-01

    Roč. 28, č. 25 (2016), č. článku 254001. ISSN 0953-8984 Institutional support: RVO:61389021 Keywords : surface plasmon * gold nanorods * quantum dots * energy transfer * photoactivation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.649, year: 2016 http://dx.doi.org/10.1088/0953-8984/28/25/254001

  20. A highly bioactive poly (amido amine)/70S30C bioactive glass hybrid with photoluminescent and antimicrobial properties for bone regeneration.

    Science.gov (United States)

    Akbari Dourbash, Fakhraddin; Alizadeh, Parvin; Nazari, Shahram; Farasat, Alireza

    2017-09-01

    The field of tissue engineering constantly calls for novel biomaterials that possess intrinsically multifunctional properties such as bioactivity, bioimaging ability and antibacterial properties. In this paper, poly (amido amine) generation 5/bioactive glass inorganic-organic hybrids have been developed through direct hybridization by 3-glycidoxypropyltrimethoxysilane (GPTMS) as coupling agent. Results indicated that the degree of covalent coupling by GPTMS and the weight percent of inorganic and organic constituents highly influence hybrids properties. It was found that nanoscale integration of inorganic and organic chains by GPTMS significantly endows hybrids with high thermal stability. Furthermore, hybrids exhibited photoluminescent ability (emission 400-600nm and 700nm) without incorporating of any organic dyes or quantum dots. In addition, hydrophilicity of our hybrids indicated good cell/material interaction. The biological apatite was formed on the surface of calcium containing hybrids when soaked in simulated body fluid (SBF) for 1week. Hybrids also showed linear biodegradation behavior in SBF that could be controlled by the degree of covalent crosslinking which was indicative of their stable biodegradation ability. High inherent antibacterial properties against Staphylococcus aureus was also observed from poly (amido amine)/silica hybrids. No adverse cytotoxicity for human gingival fibroblast cell lines (HGF) was detected after 4days. It is envisaged that our novel multifunctional hybrid system will confer intriguing potential in advancing the field of tissue engineering. Copyright © 2017 Elsevier B.V. All rights reserved.

  1. Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen InxGa1−xNyAs1−y/GaAs cylindrically shaped quantum dots

    International Nuclear Information System (INIS)

    Duque, C.M.; Morales, A.L.; Mora-Ramos, M.E.; Duque, C.A.

    2014-01-01

    An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs

  2. Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs cylindrically shaped quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Duque, C.M.; Morales, A.L. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Mora-Ramos, M.E. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

    2014-10-15

    An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs.

  3. Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

    International Nuclear Information System (INIS)

    Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

    2005-01-01

    Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

  4. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    International Nuclear Information System (INIS)

    Shimomura, K.; Kamiya, I.

    2015-01-01

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers

  5. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    Energy Technology Data Exchange (ETDEWEB)

    Shimomura, K., E-mail: sd12502@toyota-ti.ac.jp; Kamiya, I., E-mail: kamiya@toyota-ti.ac.jp [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

    2015-02-23

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers.

  6. Highly stabilized and photoluminescence enhancement of ZnS:Mn2+ nanoparticles in biotin matrix

    International Nuclear Information System (INIS)

    Keshari, Ashish K.; Pandey, Avinash C.

    2009-01-01

    We synthesized the ZnS:Mn 2+ nanoparticles passivated by biocompatible layer, namely, biotin by chemical precipitation route and studied their temporal evolution for size, structure, optical, and photoluminescence stability. To monitor the structural and optoelectronic properties of the nanoparticles with time, we have characterized the grown product by x-ray diffraction, small angle x-ray scattering, UV visible, and photoluminescence spectroscopic techniques at a regular interval for a period of three months. Results showed that the properties of nanophosphors capped with biotin are remaining the same even after 3 months. Energy dispersive x-ray analysis of 3 month aged sample shows long time compatibility between ZnS:Mn 2+ nanoparticles and the biotin. This is also confirmed by electron microscopy that the growth of the nanoparticles is strongly arrested by the biotin. X-ray photoelectron spectra were also recorded to show the chemical state of the elements. Enhanced ratio of Zn 2p to Mn 2p peaks in the x-ray photoelectron spectra of ZnS:Mn 2+ nanoparticles shows that the Mn 2+ ions are incorporated within ZnS host matrix. We found that biotin capping will enhance the luminescence from ZnS:Mn 2+ nanoparticles as compared to without capped particles. Absence of biotin will gradually degrade the luminescence upon aging while drastic degradation in luminescence intensity was observed after annealing. Properties show that biotin also protected the nanoparticles from any environmental attack

  7. A novel synthesis of magnetic and photoluminescent graphene quantum dots/MFe2O4 (M = Ni, Co) nanocomposites for catalytic application

    Science.gov (United States)

    Naghshbandi, Zhwan; Arsalani, Nasser; Zakerhamidi, Mohammad Sadegh; Geckeler, Kurt E.

    2018-06-01

    In recent year, the research is focused on the nanostructured catalyst with increase physiochemical properties. Herein, Different magnetic nanocomposites of graphene quantum dots (GQD) and MFe2O4 (M = Ni, Co) with intrinsic photoluminescent and ferromagnetic properties were synthesized by a convenient co-precipitation method. The structure, morphology, and properties of these nanocomposites as well as the catalytic activity of the nanocomposites for the reduction of p-nitrophenol were investigated. The catalytic activity was found to be in the order of NiFe2O4/GQD > CoFe2O4/GQD > NiFe2O4 > CoFe2O4. The sample NiFe2O4/GQD exhibited the best catalytic activity with an apparent rate constant of 3.56 min-1 and a reduction completion time to p-aminophenol of 60 s. The catalysts can be reused by a magnetic field and display good stability, which can be recycled for six successive experiment with a conversion percentage of more than 95%. These results demonstrate that the nanocomposite NiFe2O4/GQD is an efficient catalyst for the reduction of p-nitrophenol compound. Also, the new nanocomposites have shown a significant reduction in the direct and indirect energy bandgaps when compared to pure GQD and the corresponding magnetic metal oxides.

  8. Stretched exponential profiles of photoluminescence decays related to localized states in InGaAsN/GaAs single-quantum wells

    International Nuclear Information System (INIS)

    Nakayama, M.; Iguchi, Y.; Nomura, K.; Hashimoto, J.; Yamada, T.; Takagishi, S.

    2007-01-01

    We have investigated photoluminescence (PL) dynamics related to localized states in In x Ga 1-x As 1-y N y /GaAs single-quantum wells (SQWs) with the constant In content of x=0.32 and various N contents of y=0,0.004,and0.008. In order to determine the intrinsic band-edge energy, we used photoreflectance (PR) spectroscopy that is sensitive to the optical transitions at critical points. From systematic measurements of the PL and PR spectra, it is demonstrated that the slight incorporation of nitrogen considerably disorders the band-edge states of the InGaAsN SQWs, resulting from formation of localized states, so-called band-tail states. We find that the PL-decay profile related to the localized states generally exhibits a stretched exponential behavior peculiar to a disordered system at low temperatures, which means that randomness of alloy potential fluctuations including nitrogen dominates the PL dynamics

  9. Energy transfer and visible-infrared quantum cutting photoluminescence modification in Tm-Yb codoped YPO(4) inverse opal photonic crystals.

    Science.gov (United States)

    Wang, Siqin; Qiu, Jianbei; Wang, Qi; Zhou, Dacheng; Yang, Zhengwen

    2015-08-01

    YPO4:  Tm, Yb inverse opal photonic crystals were successfully synthesized by the colloidal crystal templates method, and the visible-infrared quantum cutting (QC) photoluminescence properties of YPO4:  Tm, Yb inverse opal photonic crystals were investigated. We obtained tetragonal phase YPO4 in all the samples when the samples sintered at 950°C for 5 h. The visible emission intensity of Tm3+ decreased significantly when the photonic bandgap was located at 650 nm under 480 nm excitation. On the contrary, the QC emission intensity of Yb3+ was enhanced as compared with the no photonic bandgap sample. When the photonic bandgap was located at 480 nm, the Yb3+ and Tm3+ light-emitting intensity weakened at the same time. We demonstrated that the energy transfer between Tm3+ and Yb3+ is enhanced by the suppression of the red emission of Tm3+. Additionally, the mechanisms for the influence of the photonic bandgap on the energy transfer process of the Tm3+, Yb3+ codoped YPO4 inverse opal are discussed.

  10. Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grown on GaAs substrate

    International Nuclear Information System (INIS)

    Motyka, M.; Kudrawiec, R.; Misiewicz, J.; Pucicki, D.; Tlaczala, M.; Fischer, M.; Marquardt, B.; Forchel, A.

    2007-01-01

    InAs quantum dots (QDs) with GaInNAs barriers grown on (001) GaAs substrate by molecular beam epitaxy have been studied by contactless electroreflectance (CER) and photoluminescence (PL) spectroscopies. It has been observed that the overgrowth of self-organized InAs QDs with GaInNAs layers effectively tunes the QD emission to the 1.3 μm spectral region. In case of PL spectra only one peak related to QD emission has been observed. In the case of CER spectra, in addition to a CER feature corresponding to the QD ground state, a rich spectrum of CER resonances related to optical transitions in InAs/GaInNAs/GaAs QW has been observed. It has been concluded that the application of GaInNAs instead InGaAs leads to better control of emission wavelength from InAs QDs since strains in GaInNAs can be tuned from compressive to tensile. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. "High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires"

    Energy Technology Data Exchange (ETDEWEB)

    GARGAS, DANIEL; GAO, HANWEI; WANG, HUNGTA; PEIDONG, YANG

    2010-12-01

    External quantum efficiency (EQE) of photoluminescence as high as 20 percent from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials.

  12. Quantum secure direct communication with high-dimension quantum superdense coding

    International Nuclear Information System (INIS)

    Wang Chuan; Li Yansong; Liu Xiaoshu; Deng Fuguo; Long Guilu

    2005-01-01

    A protocol for quantum secure direct communication with quantum superdense coding is proposed. It combines the ideas of block transmission, the ping-pong quantum secure direct communication protocol, and quantum superdense coding. It has the advantage of being secure and of high source capacity

  13. Fe(III)-functionalized carbon dots—Highly efficient photoluminescence redox catalyst for hydrogenations of olefins and decomposition of hydrogen peroxide

    KAUST Repository

    Bourlinos, Athanasios B.

    2017-03-21

    We present the first bottom-up approach to synthesize Fe(III)-functionalized carbon dots (CDs) from molecular precursors without the need of conventional thermal or microwave treatment and additional reagents. Specifically, sonication of xylene in the presence of anhydrous FeCl3 results in oxidative coupling of the aromatic substrate towards Fe(III)-functionalized CDs. The as-prepared CDs are spherical in shape with a size of 3–8 nm, highly dispersible in organic solvents and display wavelength-dependent photoluminescence (PL). The iron ions attached to the surface endow the CDs with superior catalytic activity for olefin hydrogenation with excellent conversion and selectivity (up to 100%). The Fe(III)-CDs are more effective in the hydrogenation of a series of electron donating or withdrawing olefin substrates compared to conventional homogeneous or heterogeneous Fe(III)-based catalysts. The as-prepared heterogeneous nanocatalyst can be used repeatedly without any loss of catalytic activity. Importantly, the stability of the new catalysts can be easily monitored by PL intensity or quantum yield measurements, which certainly opens the doors for real time monitoring in a range of applications. Additionally, to the best of our knowledge, for the first time, the oxidative property of Fe-CDs was also explored in decomposition of hydrogen peroxide in water with the first order rate constant of 0.7 × 10−2 min−1, proving the versatile catalytic properties of such hybrid systems.

  14. Fe(III)-functionalized carbon dots—Highly efficient photoluminescence redox catalyst for hydrogenations of olefins and decomposition of hydrogen peroxide

    KAUST Repository

    Bourlinos, Athanasios B.; Rathi, Anuj K.; Gawande, Manoj B.; Hola, Katerina; Goswami, Anandarup; Kalytchuk, Sergii; Karakassides, Michael A.; Kouloumpis, Antonios; Gournis, Dimitrios; Deligiannakis, Yannis; Giannelis, Emmanuel P.; Zboril, Radek

    2017-01-01

    We present the first bottom-up approach to synthesize Fe(III)-functionalized carbon dots (CDs) from molecular precursors without the need of conventional thermal or microwave treatment and additional reagents. Specifically, sonication of xylene in the presence of anhydrous FeCl3 results in oxidative coupling of the aromatic substrate towards Fe(III)-functionalized CDs. The as-prepared CDs are spherical in shape with a size of 3–8 nm, highly dispersible in organic solvents and display wavelength-dependent photoluminescence (PL). The iron ions attached to the surface endow the CDs with superior catalytic activity for olefin hydrogenation with excellent conversion and selectivity (up to 100%). The Fe(III)-CDs are more effective in the hydrogenation of a series of electron donating or withdrawing olefin substrates compared to conventional homogeneous or heterogeneous Fe(III)-based catalysts. The as-prepared heterogeneous nanocatalyst can be used repeatedly without any loss of catalytic activity. Importantly, the stability of the new catalysts can be easily monitored by PL intensity or quantum yield measurements, which certainly opens the doors for real time monitoring in a range of applications. Additionally, to the best of our knowledge, for the first time, the oxidative property of Fe-CDs was also explored in decomposition of hydrogen peroxide in water with the first order rate constant of 0.7 × 10−2 min−1, proving the versatile catalytic properties of such hybrid systems.

  15. A novel approach to obtain highly intense self-activated photoluminescence emissions in hydroxyapatite nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Machado, Thales R. [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Sczancoski, Júlio C. [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); Beltrán-Mir, Héctor [QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Nogueira, Içamira C. [PPGEM-IFMA, Instituto Federal de Educação, Ciência e Tecnologia do Maranhão, 65030-005 São Luís, MA (Brazil); Li, Máximo S. [IFSC-USP, Universidade de São Paulo, P.O. Box 369, 13560-970 São Carlos, SP (Brazil); Andrés, Juan [QFA-UJI, Universitat Jaume I, 12071 Castellón (Spain); Cordoncillo, Eloisa [QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Longo, Elson, E-mail: elson.liec@gmail.com [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil)

    2017-05-15

    Defect-related photoluminescence (PL) in materials have attracted interest for applications including near ultraviolet (NUV) excitable light-emitting diodes and in biomedical field. In this paper, hydroxyapatite [Ca{sub 10}(PO{sub 4}){sub 6}(OH){sub 2}] nanorods with intense PL bands (bluish- and yellowish-white emissions) were obtained when excited under NUV radiation at room temperature. These nanoparticles were synthesized via chemical precipitation at 90 °C followed by distinct heat treatments temperatures (200–800 °C). Intense and broad emission profiles were achieved at 350 °C (380–750 nm) and 400 °C (380–800 nm). UV–Vis spectroscopy revealed band gap energies (5.58–5.78 eV) higher than the excitation energies (~3.54 and ~2.98 eV at 350 and 415 nm, respectively), confirming the contribution of defect energy levels within the forbidden zone for PL emissions. The structural features were characterized by X-ray diffraction, Rietveld refinement, thermogravimetric analysis, and Fourier transform infrared spectroscopy. By means of these techniques, the relation between structural order-disorder induced by defects, chemical reactions at both lattice and surface of the materials as well as the PL, without activator centers, was discussed in details. - Graphical abstract: The self-activated photoluminescence emissions of chemically precipitated hydroxyapatite nanorods were improved by different heat treatment temperatures. - Highlights: • HA nanorods were synthesized with improved self-activated PL at room temperature. • PL profile and intensity dependents on the temperature of posterior heat treatments. • Bluish- and yellowish-white emissions under NUV excitation (350 and 415 nm). • Broad and intense profiles achieved at 350 °C (380–750 nm) and 400 °C (380–800 nm). • PL from the e′–h{sup •} recombination between defect energy levels within the band gap.

  16. Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

    International Nuclear Information System (INIS)

    Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

    2012-01-01

    Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

  17. High-throughput fabrication of anti-counterfeiting colloid-based photoluminescent microtags using electrical nanoimprint lithography

    International Nuclear Information System (INIS)

    Diaz, R; Palleau, E; Poirot, D; Sangeetha, N M; Ressier, L

    2014-01-01

    This work demonstrates the excellent capability of the recently developed electrical nanoimprint lithography (e-NIL) technique for quick, high-throughput production of well-defined colloid assemblies on surfaces. This is shown by fabricating micron-sized photoluminescent quick response (QR) codes based on the electrostatic directed trapping (so called nanoxerography process) of 28 nm colloidal lanthanide-doped upconverting NaYF 4 nanocrystals. Influencing experimental parameters have been optimized and the contribution of triboelectrification in e-NIL was evidenced. Under the chosen conditions, more than 300 000 nanocrystal-based QR codes were fabricated on a 4 inch silicon wafer, in less than 15 min. These microtags were then transferred to transparent flexible films, to be easily integrated onto desired products. Invisible to the naked eye, they can be decoded and authenticated using an optical microscopy image of their specific photoluminescence mapping. Beyond this very promising application for product tracking and the anti-counterfeiting strategies, e-NIL nanoxerography, potentially applicable to any types of charged and/or polarizable colloids and pattern geometries opens up tremendous opportunities for industrial scale production of various other kinds of colloid-based devices and sensors. (paper)

  18. Defect induced photoluminescence in MoS2 quantum dots and effect of Eu3+/Tb3+ co-doping towards efficient white light emission

    Science.gov (United States)

    Haldar, Dhrubaa; Ghosh, Arnab; Bose, Saptasree; Mondal, Supriya; Ghorai, Uttam Kumar; Saha, Shyamal K.

    2018-05-01

    Intensive research has been carried out on optical properties of MoS2 quantum dots for versatile applications in photo catalytic, sensing and optoelectronic devices. However, white light generation from MoS2 quantum dots particularly using doping effect is relatively unexplored. Herein we report successful synthesis of Europium (Eu)/Terbium (Tb) co-doped MoS2 quantum dots to achieve white light for potential applications in optoelectronic devices. The dopant ions are introduced into the host lattice to retain the emission colors to cover the entire range of visible light of solar spectrum. Perfect white light (CIE = 0.31, 0.33) with high intensity (quantum yield = 28.29%) is achieved in these rare earth elements co-doped quantum dot system. A new peak is observed in the NIR region which is attributed to the defects present in MoS2 quantum dots. Temperature dependent study has been carried out to understand the origin of this new peak in the NIR region. It is seen that the 'S' defects in the QDs cause the appearance of this peak which shows a blue shift at higher temperature.

  19. High energy approximations in quantum field theory

    International Nuclear Information System (INIS)

    Orzalesi, C.A.

    1975-01-01

    New theoretical methods in hadron physics based on a high-energy perturbation theory are discussed. The approximated solutions to quantum field theory obtained by this method appear to be sufficiently simple and rich in structure to encourage hadron dynamics studies. Operator eikonal form for field - theoretic Green's functions is derived and discussion is held on how the eikonal perturbation theory is to be renormalized. This method is extended to massive quantum electrodynamics of scalar charged bosons. Possible developments and applications of this theory are given [pt

  20. Towards realising high-speed large-bandwidth quantum memory

    Institute of Scientific and Technical Information of China (English)

    SHI BaoSen; DING DongSheng

    2016-01-01

    Indispensable for quantum communication and quantum computation,quantum memory executes on demand storage and retrieval of quantum states such as those of a single photon,an entangled pair or squeezed states.Among the various forms of quantum memory,Raman quantum memory has advantages forits broadband and high-speed characteristics,which results in a huge potential for applications in quantum networks and quantum computation.However,realising Raman quantum memory with true single photons and photonic entanglementis challenging.In this review,after briefly introducing the main benchmarks in the development of quantum memory and describing the state of the art,we focus on our recent experimental progress inquantum memorystorage of quantum states using the Raman scheme.

  1. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    Science.gov (United States)

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-08-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

  2. Photonic engineering of highly linearly polarized quantum dot emission at telecommunication wavelengths

    Science.gov (United States)

    Mrowiński, P.; Emmerling, M.; Schneider, C.; Reithmaier, J. P.; Misiewicz, J.; Höfling, S.; Sek, G.

    2018-04-01

    In this work, we discuss a method to control the polarization anisotropy of spontaneous emission from neutral excitons confined in quantum-dot-like nanostructures, namely single epitaxial InAs quantum dashes emitting at telecom wavelengths. The nanostructures are embedded inside lithographically defined, in-plane asymmetric photonic mesa structures, which generate polarization-dependent photonic confinement. First, we study the influence of the photonic confinement on the polarization anisotropy of the emission by photoluminescence spectroscopy, and we find evidence of different contributions to a degree of linear polarization (DOLP), i.e., from the quantum dash and the photonic mesa, in total giving rise to DOLP =0.85 . Then, we perform finite-difference time-domain simulations of photonic confinement, and we calculate the DOLP in a dipole approximation showing well-matched results for the established model. Furthermore, by using numerical calculations, we demonstrate several types of photonic confinements where highly linearly polarized emission with DOLP of about 0.9 is possible by controlling the position of a quantum emitter inside the photonic structure. Then, we elaborate on anisotropic quantum emitters allowing for exceeding DOLP =0.95 in an optimized case, and we discuss the ways towards efficient linearly polarized single photon source at telecom bands.

  3. Low cost 3D-printing used in an undergraduate project: an integrating sphere for measurement of photoluminescence quantum yield

    International Nuclear Information System (INIS)

    Tomes, John J; Finlayson, Chris E

    2016-01-01

    We report upon the exploitation of the latest 3D printing technologies to provide low-cost instrumentation solutions, for use in an undergraduate level final-year project. The project addresses prescient research issues in optoelectronics, which would otherwise be inaccessible to such undergraduate student projects. The experimental use of an integrating sphere in conjunction with a desktop spectrometer presents opportunities to use easily handled, low cost materials as a means to illustrate many areas of physics such as spectroscopy, lasers, optics, simple circuits, black body radiation and data gathering. Presented here is a 3rd year undergraduate physics project which developed a low cost (£25) method to manufacture an experimentally accurate integrating sphere by 3D printing. Details are given of both a homemade internal reflectance coating formulated from readily available materials, and a robust instrument calibration method using a tungsten bulb. The instrument is demonstrated to give accurate and reproducible experimental measurements of luminescence quantum yield of various semiconducting fluorophores, in excellent agreement with literature values. (paper)

  4. Low cost 3D-printing used in an undergraduate project: an integrating sphere for measurement of photoluminescence quantum yield

    Science.gov (United States)

    Tomes, John J.; Finlayson, Chris E.

    2016-09-01

    We report upon the exploitation of the latest 3D printing technologies to provide low-cost instrumentation solutions, for use in an undergraduate level final-year project. The project addresses prescient research issues in optoelectronics, which would otherwise be inaccessible to such undergraduate student projects. The experimental use of an integrating sphere in conjunction with a desktop spectrometer presents opportunities to use easily handled, low cost materials as a means to illustrate many areas of physics such as spectroscopy, lasers, optics, simple circuits, black body radiation and data gathering. Presented here is a 3rd year undergraduate physics project which developed a low cost (£25) method to manufacture an experimentally accurate integrating sphere by 3D printing. Details are given of both a homemade internal reflectance coating formulated from readily available materials, and a robust instrument calibration method using a tungsten bulb. The instrument is demonstrated to give accurate and reproducible experimental measurements of luminescence quantum yield of various semiconducting fluorophores, in excellent agreement with literature values.

  5. A novel ascorbic acid sensor based on the Fe3+/Fe2+ modulated photoluminescence of CdTe quantum dots@SiO2 nanobeads.

    Science.gov (United States)

    Ma, Qiang; Li, Yang; Lin, Zi-Han; Tang, Guangchao; Su, Xing-Guang

    2013-10-21

    In this paper, CdTe quantum dot (QD)@silica nanobeads were used as modulated photoluminescence (PL) sensors for the sensing of ascorbic acid in aqueous solution for the first time. The sensor was developed based on the different quenching effects of Fe(2+) and Fe(3+) on the PL intensity of the CdTe QD@ silica nanobeads. Firstly, the PL intensity of the CdTe QDs was quenched in the presence of Fe(3+). Although both Fe(2+) and Fe(3+) could quench the PL intensity of the CdTe QDs, the quenching efficiency were quite different for Fe(2+) and Fe(3+). The PL intensity of the CdTe QD@silica nanobeads can be quenched by about 15% after the addition of Fe(3+) (60 μmol L(-1)), while the PL intensity of the CdTe QD@silica nanobeads can be quenched about 49% after the addition of Fe(2+) (60 μmol L(-1)). Therefore, the PL intensity of the CdTe QD@silica nanobeads decreased significantly when Fe(3+) was reduced to Fe(2+) by ascorbic acid. To confirm the strategy of PL modulation in this sensing system, trace H2O2 was introduced to oxidize Fe(2+) to Fe(3+). As a result, the PL intensity of the CdTe QD@silica nanobeads was partly recovered. The proposed sensor could be used for ascorbic acid sensing in the concentration range of 3.33-400 μmol L(-1), with a detection limit (3σ) of 1.25 μmol L(-1) The feasibility of the proposed sensor for ascorbic acid determination in tablet samples was also studied, and satisfactory results were obtained.

  6. Ultrathin Two-Dimensional Organic-Inorganic Hybrid Perovskite Nanosheets with Bright, Tunable Photoluminescence and High Stability.

    Science.gov (United States)

    Yang, Shuang; Niu, Wenxin; Wang, An-Liang; Fan, Zhanxi; Chen, Bo; Tan, Chaoliang; Lu, Qipeng; Zhang, Hua

    2017-04-03

    Two-dimensional (2D) organic-inorganic hybrid perovskite nanosheets (NSs) are attracting increasing research interest due to their unique properties and promising applications. Here, for the first time, we report the facile synthesis of single- and few-layer free-standing phenylethylammonium lead halide perovskite NSs, that is, (PEA) 2 PbX 4 (PEA=C 8 H 9 NH 3 , X=Cl, Br, I). Importantly, their lateral size can be tuned by changing solvents. Moreover, these ultrathin 2D perovskite NSs exhibit highly efficient and tunable photoluminescence, as well as superior stability. Our study provides a simple and general method for the controlled synthesis of 2D perovskite NSs, which may offer a new avenue for their fundamental studies and optoelectronic applications. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Quantum chromodynamics at high energy

    CERN Document Server

    Kovchegov, Yuri V

    2012-01-01

    Filling a gap in the current literature, this book is the first entirely dedicated to high energy QCD including parton saturation. It presents groundbreaking progress on the subject and describes many of the problems at the forefront of research, bringing postgraduate students, theorists and advanced experimentalists up to date with the current status of the field. A broad range of topics in high energy QCD are covered, most notably on the physics of parton saturation and the Color Glass Condensate (CGC). The material is presented in a pedagogical way, with numerous examples and exercises. Discussion ranges from the quasi-classical McLerran–Venugopalan model to the linear and non-linear BFKL/BK/JIMWLK small-x evolution equations. The authors adopt both a theoretical and experimental outlook and present the physics of strong interactions in a universal way, making it useful to physicists from various sub-communities and applicable to processes studied at high energy accelerators around the world.

  8. Photoluminescence enhancement in nanocomposite thin films of CdS-ZnO

    International Nuclear Information System (INIS)

    Ayyub, Pushan; Vasa, Parinda; Taneja, Praveen; Banerjee, Rajarshi; Singh, B.P.

    2005-01-01

    We show that the photoluminescence emitted from a dense, two-component quantum dot ensemble on a thin film is significantly higher and decays much faster than that from quantum dots of either of the two pure systems (CdS and ZnO). The semiconductor nanocomposite, in which the characteristic grain size of each species was 2-3 nm, was deposited directly on Si wafers by high-pressure magnetron sputtering, and exhibits a single, relatively sharp optical absorption edge

  9. Shell-Dependent Photoluminescence Studies Provide Mechanistic Insights into the Off-Grey-On Transitions of Blinking Quantum Dots.

    Science.gov (United States)

    Gao, Feng; Bajwa, Pooja; Nguyen, Anh; Heyes, Colin D

    2017-03-28

    The majority of quantum dot (QD) blinking studies have used a model of switching between two distinct fluorescence intensity levels, "on" and "off". However, a distinct intermediate intensity level has been identified in some recent reports, a so-called "grey" or "dim" state, which has brought this binary model into question. While this grey state has been proposed to result from the formation of a trion, it is still unclear under which conditions it is present in a QD. By performing shell-dependent blinking studies on CdSe QDs, we report that the populations of the grey state and the on state are strongly dependent on both the shell material and its thickness. We found that adding a ZnS shell did not result in a significant population of the grey state. Using ZnSe as the shell material resulted in a slightly higher population of the grey state, although it was still poorly resolved. However, adding a CdS shell resulted in the population of a grey state, which depended strongly on its thickness up to 5 ML. Interestingly, while the frequency of transitions to and from the grey state showed a very strong dependence on CdS shell thickness, the brightness of and the dwell time in the grey state did not. Moreover, we found that the grey state acts as an on-pathway intermediate state between on and off states, with the thickness of the shell determining the transition probability between them. We also identified two types of blinking behavior in QDs, one that showed long-lived but lower intensity on states and another that showed short-lived but brighter on states that also depended on the shell thickness. Intensity-resolved single QD fluorescence lifetime analysis was used to identify the relationship between the various exciton decay pathways and the resulting intensity levels. We used this data to propose a model in which multiple on, grey, and off states exist whose equilibrium populations vary with time that give rise to the various intensity levels of single QDs

  10. High-Capacity Quantum Secure Direct Communication Based on Quantum Hyperdense Coding with Hyperentanglement

    International Nuclear Information System (INIS)

    Wang Tie-Jun; Li Tao; Du Fang-Fang; Deng Fu-Guo

    2011-01-01

    We present a quantum hyperdense coding protocol with hyperentanglement in polarization and spatial-mode degrees of freedom of photons first and then give the details for a quantum secure direct communication (QSDC) protocol based on this quantum hyperdense coding protocol. This QSDC protocol has the advantage of having a higher capacity than the quantum communication protocols with a qubit system. Compared with the QSDC protocol based on superdense coding with d-dimensional systems, this QSDC protocol is more feasible as the preparation of a high-dimension quantum system is more difficult than that of a two-level quantum system at present. (general)

  11. Highly Efficient Spontaneous Emission from Self-Assembled Quantum Dots

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Lund-Hansen, Toke; Hvam, Jørn Märcher

    2006-01-01

    We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency.......We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency....

  12. Quantum Phenomena in High Energy Density Plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Murnane, Margaret [Univ. of Colorado, Boulder, CO (United States); Kapteyn, Henry [Univ. of Colorado, Boulder, CO (United States)

    2017-05-10

    The possibility of implementing efficient (phase matched) HHG upconversion of deep- UV lasers in multiply-ionized plasmas, with potentially unprecedented conversion efficiency is a fascinating prospect. HHG results from the extreme nonlinear response of matter to intense laser light:high harmonics are radiated as a result of a quantum coherent electron recollision process that occurs during laser field ionization of an atom. Under current support from this grant in work published in Science in 2015, we discovered a new regime of bright HHG in highly-ionized plasmas driven by intense UV lasers, that generates bright harmonics to photon energies >280eV

  13. Aptamer and 5-fluorouracil dual-loading Ag2S quantum dots used as a sensitive label-free probe for near-infrared photoluminescence turn-on detection of CA125 antigen.

    Science.gov (United States)

    Jin, Hui; Gui, Rijun; Gong, Jun; Huang, Wenxue

    2017-06-15

    In this article, Ag 2 S quantum dots (QDs) were prepared by a facile aqueous synthesis method, using thiourea as a new sulfur precursor. Based on electrostatic interactions, 5-fluorouracil (5-Fu) was combined with the aptamer of CA125 antigen to fabricate aptamer/5-Fu complex. The surface of as-prepared Ag 2 S QDs was modified with polyethylenimine, followed by combination with the aptamer/5-Fu complex to form Ag 2 S QDs/aptamer/5-Fu hybrids. During the combination of Ag 2 S QDs with aptamer/5-Fu complex, near-infrared (NIR) photoluminescence (PL) of QDs (peaked at 850nm) was markedly reduced under excitation at 625nm, attributed to photo-induced electron transfer from QDs to 5-Fu. However, the addition of CA125 induced obvious NIR PL recovery, which was ascribed to the strong binding affinity of CA125 with its aptamer, and the separation of aptamer/5-Fu complex from the surface of QDs. Hence, the Ag 2 S QDs/aptamer/5-Fu hybrids were developed as a novel NIR PL turn-on probe of CA125. In the concentration range of [CA125] from 0.1 to 10 6 ngmL -1 , there were a good linear relationship between NIR PL intensities of Ag 2 S QDs and Log[CA125], and a low limit of detection of 0.07ngmL -1 . Experimental results revealed the highly selective and sensitive NIR PL responses of this probe to CA125, over other potential interferences. In real human body fluids, this probe also exhibited superior analytical performance, together with high detection recoveries. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities

    DEFF Research Database (Denmark)

    Reitzenstein, S.; Schneider, C.; Albert, F.

    2011-01-01

    Semiconductor quantum dots (QDs) are fascinating nanoscopic structures for photonics and future quantum information technology. However, the random position of self-organized QDs inhibits a deterministic coupling in devices relying on cavity quantum electrodynamics (cQED) effects which complicates......, e.g., the large scale fabrication of quantum light sources. As a result, large efforts focus on the growth and the device integration of site-controlled QDs. We present the growth of low density arrays of site-controlled In(Ga)As QDs where shallow etched nanoholes act as nucleation sites...... linewidth, the oscillator strength and the quantum efficiency. A stacked growth of strain coupled SCQDs forming on wet chemically etched nanoholes provide the smallest linewidth with an average value of 210 μeV. Using time resolved photoluminescence studies on samples with a varying thickness of the capping...

  15. Photo-stability and time-resolved photoluminescence study of colloidal CdSe/ZnS quantum dots passivated in Al{sub 2}O{sub 3} using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Chih-Yi [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Mao, Ming-Hua, E-mail: mhmao@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-08-28

    We report photo-stability enhancement of colloidal CdSe/ZnS quantum dots (QDs) passivated in Al{sub 2}O{sub 3} thin film using the atomic layer deposition (ALD) technique. 62% of the original peak photoluminescence (PL) intensity remained after ALD. The photo-oxidation and photo-induced fluorescence enhancement effects of both the unpassivated and passivated QDs were studied under various conditions, including different excitation sources, power densities, and environment. The unpassivated QDs showed rapid PL degradation under high excitation due to strong photo-oxidation in air while the PL intensity of Al{sub 2}O{sub 3} passivated QDs was found to remain stable. Furthermore, recombination dynamics of the unpassivated and passivated QDs were investigated by time-resolved measurements. The average lifetime of the unpassivated QDs decreases with laser irradiation time due to photo-oxidation. Photo-oxidation creates surface defects which reduces the QD emission intensity and enhances the non-radiative recombination rate. From the comparison of PL decay profiles of the unpassivated and passivated QDs, photo-oxidation-induced surface defects unexpectedly also reduce the radiative recombination rate. The ALD passivation of Al{sub 2}O{sub 3} protects QDs from photo-oxidation and therefore avoids the reduction of radiative recombination rate. Our experimental results demonstrated that passivation of colloidal QDs by ALD is a promising method to well encapsulate QDs to prevent gas permeation and to enhance photo-stability, including the PL intensity and carrier lifetime in air. This is essential for the applications of colloidal QDs in light-emitting devices.

  16. Highly luminescent S,N co-doped carbon quantum dots-sensitized chemiluminescence on luminol-H2 O2 system for the determination of ranitidine.

    Science.gov (United States)

    Chen, Jianqiu; Shu, Juan; Chen, Jiao; Cao, Zhiran; Xiao, An; Yan, Zhengyu

    2017-05-01

    S,N co-doped carbon quantum dots (N,S-CQDs) with super high quantum yield (79%) were prepared by the hydrothermal method and characterized by transmission electron microscopy, photoluminescence, UV-Vis spectroscopy and Fourier transformed infrared spectroscopy. N,S-CQDs can enhance the chemiluminescence intensity of a luminol-H 2 O 2 system. The possible mechanism of the luminol-H 2 O 2 -(N,S-CQDs) was illustrated by using chemiluminescence, photoluminescence and ultraviolet analysis. Ranitidine can quench the chemiluminescence intensity of a luminol-H 2 O 2 -N,S-CQDs system. So, a novel flow-injection chemiluminescence method was designed to determine ranitidine within a linear range of 0.5-50 μg ml -1 and a detection limit of 0.12 μg ml -1 . The method shows promising application prospects. Copyright © 2016 John Wiley & Sons, Ltd.

  17. Photoluminescent properties of single crystal diamond microneedles

    Science.gov (United States)

    Malykhin, Sergey A.; Ismagilov, Rinat R.; Tuyakova, Feruza T.; Obraztsova, Ekaterina A.; Fedotov, Pavel V.; Ermakova, Anna; Siyushev, Petr; Katamadze, Konstantin G.; Jelezko, Fedor; Rakovich, Yury P.; Obraztsov, Alexander N.

    2018-01-01

    Single crystal needle-like diamonds shaped as rectangular pyramids were produced by combination of chemical vapor deposition and selective oxidation with dimensions and geometrical characteristics depending on the deposition process parameters. Photoluminescence spectra and their dependencies on wavelength of excitation radiation reveal presence of nitrogen- and silicon-vacancy color centers in the diamond crystallites. Photoluminescence spectra, intensity mapping, and fluorescence lifetime imaging microscopy indicate that silicon-vacancy centers are concentrated at the crystallites apex while nitrogen-vacancy centers are distributed over the whole crystallite. Dependence of the photoluminescence on excitation radiation intensity demonstrates saturation and allows estimation of the color centers density. The combination of structural parameters, geometry and photoluminescent characteristics are prospective for advantageous applications of these diamond crystallites in quantum information processing and optical sensing.

  18. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  19. Rhodamine 6G impregnated porous silica: A photoluminescence study

    Energy Technology Data Exchange (ETDEWEB)

    Anedda, A. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Canada) (Italy); Carbonaro, C.M. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Canada) (Italy)]. E-mail: cm.carbonaro@dsf.unica.it; Clemente, F. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Corpino, R. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Ricci, P.C. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Rossini, S. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy)

    2005-12-15

    The optical properties of rhodamine 6G dye confined in porous silica are reported. Photoluminescence properties of embedded chromophores in mesoporous hosts can be affected by the surrounding matrices: shifts in emission spectra and variations of photoluminescence quantum yield are found as compared to dye solutions. Host-guest interactions are studied here by varying both SiO{sub 2} xerogels porosity and the dye concentration. Comparing samples obtained by impregnating matrices with 5.4 and 18.2 nm pores with solutions having concentrations in the rhodamine 6G high laser gain, matrices with 5.4 nm pores impregnated with a dye concentration of 5 x 10{sup -4} M are found to be the most stable and efficient in the examined range.

  20. High-Density Quantum Sensing with Dissipative First Order Transitions.

    Science.gov (United States)

    Raghunandan, Meghana; Wrachtrup, Jörg; Weimer, Hendrik

    2018-04-13

    The sensing of external fields using quantum systems is a prime example of an emergent quantum technology. Generically, the sensitivity of a quantum sensor consisting of N independent particles is proportional to sqrt[N]. However, interactions invariably occurring at high densities lead to a breakdown of the assumption of independence between the particles, posing a severe challenge for quantum sensors operating at the nanoscale. Here, we show that interactions in quantum sensors can be transformed from a nuisance into an advantage when strong interactions trigger a dissipative phase transition in an open quantum system. We demonstrate this behavior by analyzing dissipative quantum sensors based upon nitrogen-vacancy defect centers in diamond. Using both a variational method and a numerical simulation of the master equation describing the open quantum many-body system, we establish the existence of a dissipative first order transition that can be used for quantum sensing. We investigate the properties of this phase transition for two- and three-dimensional setups, demonstrating that the transition can be observed using current experimental technology. Finally, we show that quantum sensors based on dissipative phase transitions are particularly robust against imperfections such as disorder or decoherence, with the sensitivity of the sensor not being limited by the T_{2} coherence time of the device. Our results can readily be applied to other applications in quantum sensing and quantum metrology where interactions are currently a limiting factor.

  1. High-Density Quantum Sensing with Dissipative First Order Transitions

    Science.gov (United States)

    Raghunandan, Meghana; Wrachtrup, Jörg; Weimer, Hendrik

    2018-04-01

    The sensing of external fields using quantum systems is a prime example of an emergent quantum technology. Generically, the sensitivity of a quantum sensor consisting of N independent particles is proportional to √{N }. However, interactions invariably occurring at high densities lead to a breakdown of the assumption of independence between the particles, posing a severe challenge for quantum sensors operating at the nanoscale. Here, we show that interactions in quantum sensors can be transformed from a nuisance into an advantage when strong interactions trigger a dissipative phase transition in an open quantum system. We demonstrate this behavior by analyzing dissipative quantum sensors based upon nitrogen-vacancy defect centers in diamond. Using both a variational method and a numerical simulation of the master equation describing the open quantum many-body system, we establish the existence of a dissipative first order transition that can be used for quantum sensing. We investigate the properties of this phase transition for two- and three-dimensional setups, demonstrating that the transition can be observed using current experimental technology. Finally, we show that quantum sensors based on dissipative phase transitions are particularly robust against imperfections such as disorder or decoherence, with the sensitivity of the sensor not being limited by the T2 coherence time of the device. Our results can readily be applied to other applications in quantum sensing and quantum metrology where interactions are currently a limiting factor.

  2. Quantum Simulations of Low Temperature High Energy Density Matter

    National Research Council Canada - National Science Library

    Voth, Gregory

    2004-01-01

    .... Using classical molecular dynamics simulations to evaluate these equilibrium properties would predict qualitatively incorrect results for low temperature solid hydrogen, because of the highly quantum...

  3. Highly Efficient Light-Emitting Diodes of Colloidal Metal-Halide Perovskite Nanocrystals beyond Quantum Size.

    Science.gov (United States)

    Kim, Young-Hoon; Wolf, Christoph; Kim, Young-Tae; Cho, Himchan; Kwon, Woosung; Do, Sungan; Sadhanala, Aditya; Park, Chan Gyung; Rhee, Shi-Woo; Im, Sang Hyuk; Friend, Richard H; Lee, Tae-Woo

    2017-07-25

    Colloidal metal-halide perovskite quantum dots (QDs) with a dimension less than the exciton Bohr diameter D B (quantum size regime) emerged as promising light emitters due to their spectrally narrow light, facile color tuning, and high photoluminescence quantum efficiency (PLQE). However, their size-sensitive emission wavelength and color purity and low electroluminescence efficiency are still challenging aspects. Here, we demonstrate highly efficient light-emitting diodes (LEDs) based on the colloidal perovskite nanocrystals (NCs) in a dimension > D B (regime beyond quantum size) by using a multifunctional buffer hole injection layer (Buf-HIL). The perovskite NCs with a dimension greater than D B show a size-irrespective high color purity and PLQE by managing the recombination of excitons occurring at surface traps and inside the NCs. The Buf-HIL composed of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and perfluorinated ionomer induces uniform perovskite particle films with complete film coverage and prevents exciton quenching at the PEDOT:PSS/perovskite particle film interface. With these strategies, we achieved a very high PLQE (∼60.5%) in compact perovskite particle films without any complex post-treatments and multilayers and a high current efficiency of 15.5 cd/A in the LEDs of colloidal perovskite NCs, even in a simplified structure, which is the highest efficiency to date in green LEDs that use colloidal organic-inorganic metal-halide perovskite nanoparticles including perovskite QDs and NCs. These results can help to guide development of various light-emitting optoelectronic applications based on perovskite NCs.

  4. Feshbach shape resonance for high Tc pairing in superlattices of quantum stripes and quantum wells

    Directory of Open Access Journals (Sweden)

    A Bianconi

    2006-09-01

    Full Text Available   The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven by the architecture of material: superlattices of quantum wells (intercalated graphite or diborides and superlattices of quantum stripes (doped high Tc cuprate perovskites where the chemical potential is tuned to a Van Hove-Lifshitz singularity (vHs in the electronic energy spectrum of the superlattice associated with the change of the Fermi surface dimensionality in one of the subbands.

  5. High-Performance Spray-Deposited Indium Doped ZnO Thin Film: Structural, Morphological, Electrical, Optical, and Photoluminescence Study

    Science.gov (United States)

    Asl, Hassan Zare; Rozati, Seyed Mohammad

    2018-03-01

    In this study, high-quality indium doped zinc oxide thin films were deposited using the spray pyrolysis technique, and the substrate temperature varied from 450°C to 550°C with steps of 25°C with the aim of investigating the effect of substrate temperature. It was found that as the temperature increased, the resistivity of the films decreased to the extent that it was as low as 5.34 × 10-3 Ω cm for the one deposited at 500°C; however, it slightly increased for the resulting film at 550°C. Although the carrier concentration mostly increased with temperature, it appeared that the carrier mobility was the parameter mainly governing the conductivity variation. In addition, the average transparency of the deposited films at 500°C, 525°C and 550°C was around 87% (400-800 nm), which makes them outstanding transparent conductive oxide films. Moreover, the crystallite size and strain of the resulting films were estimated via the Williamson-Hall method. The results revealed a considerable reduction in the crystallite size and strain up to 500°C followed by a rise at higher substrate temperature. Based on both the surface and cross-section field emission scanning electron microscope images, the film resulting at 500°C was highly compacted and crack free, which can explain the enlargement of the carrier mobility (10.9 cm2 V-1 s-1) in this film. Finally, a detailed photoluminescence study revealed several peaks in the spectrum and the variation of the two major peaks appeared to have correlation with the carrier concentration.

  6. Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, Kristjan; Birkedal, Dan

    2002-01-01

    We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction....

  7. High yield growth of uniform ZnS nanospheres with strong photoluminescence properties

    International Nuclear Information System (INIS)

    Li, Yuan; Li, Qing; Wu, Huijie; Zhang, Jin; Lin, Hua; Nie, Ming; Zhang, Yu

    2013-01-01

    Graphical abstract: High-yield ZnS nanospheres with an average diameter of 80 nm were fabricated successfully in aqueous solution at 100 °C by the assistance of surfactant PVP. It was found that PVP plays a crucial role in the formation of uniform ZnS nanospheres. A possible self-assembling growth mechanism was proposed. The UV–vis spectrum indicates that the as-prepared ZnS nanospheres exhibit a dramatic blue-shift. PL spectrum reveals that the ZnS nanospheres have a strong visible emission peak centered at 516 nm with excitation light of 400 nm. Highlights: ► High-yield ZnS nanospheres were generated conveniently in aqueous solution. ► The amount of surfactant PVP plays a crucial role on the morphology and size of the products. ► A tentative explanation for the growth mechanism of ZnS nanospheres was proposed. ► The UV–vis spectrum indicated that the sample exhibits a dramatic blue-shift. ► PL spectrum reveals that ZnS nanospheres have a strong visible emission peak centered at 516 nm with excitation light of 400 nm. - Abstract: High yield ZnS nanospheres were generated conveniently in aqueous solution with the assistance of surfactant polyvinyl pyrrolidone (PVP). The products were characterized by XRD, EDX, XPS, FESEM, TEM and HRTEM. The as-prepared ZnS nanospheres were uniform with an average diameter of 80 nm. The role of PVP in the forming of ZnS nanospheres was investigated. The results indicated that surfactant PVP plays a crucial role on the morphology and size of the products. Moreover, a tentative explanation for the growth mechanism of ZnS nanospheres was proposed. UV–vis and PL absorption spectrum were used to investigate the optical properties of ZnS nanospheres. The UV–vis spectrum indicated that the sample exhibits a dramatic blue-shift. PL spectrum reveals that ZnS nanospheres have a strong visible emission peak centered at 516 nm with excitation light of 400 nm.

  8. High Efficiency Colloidal Quantum Dot Phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Kahen, Keith

    2013-12-31

    The project showed that non-Cd containing, InP-based nanocrystals (semiconductor materials with dimensions of ~6 nm) have high potential for enabling next-generation, nanocrystal-based, on chip phosphors for solid state lighting. Typical nanocrystals fall short of the requirements for on chip phosphors due to their loss of quantum efficiency under the operating conditions of LEDs, such as, high temperature (up to 150 °C) and high optical flux (up to 200 W/cm2). The InP-based nanocrystals invented during this project maintain high quantum efficiency (>80%) in polymer-based films under these operating conditions for emission wavelengths ranging from ~530 to 620 nm. These nanocrystals also show other desirable attributes, such as, lack of blinking (a common problem with nanocrystals which limits their performance) and no increase in the emission spectral width from room to 150 °C (emitters with narrower spectral widths enable higher efficiency LEDs). Prior to these nanocrystals, no nanocrystal system (regardless of nanocrystal type) showed this collection of properties; in fact, other nanocrystal systems are typically limited to showing only one desirable trait (such as high temperature stability) but being deficient in other properties (such as high flux stability). The project showed that one can reproducibly obtain these properties by generating a novel compositional structure inside of the nanomaterials; in addition, the project formulated an initial theoretical framework linking the compositional structure to the list of high performance optical properties. Over the course of the project, the synthetic methodology for producing the novel composition was evolved to enable the synthesis of these nanomaterials at a cost approximately equal to that required for forming typical conventional nanocrystals. Given the above results, the last major remaining step prior to scale up of the nanomaterials is to limit the oxidation of these materials during the tens of

  9. Self-assembly of concentric quantum double rings.

    Science.gov (United States)

    Mano, Takaaki; Kuroda, Takashi; Sanguinetti, Stefano; Ochiai, Tetsuyuki; Tateno, Takahiro; Kim, Jongsu; Noda, Takeshi; Kawabe, Mitsuo; Sakoda, Kazuaki; Kido, Giyuu; Koguchi, Nobuyuki

    2005-03-01

    We demonstrate the self-assembled formation of concentric quantum double rings with high uniformity and excellent rotational symmetry using the droplet epitaxy technique. Varying the growth process conditions can control each ring's size. Photoluminescence spectra emitted from an individual quantum ring complex show peculiar quantized levels that are specified by the carriers' orbital trajectories.

  10. Comparison of in situ ionizing radiation effects on Raman and photoluminescence intensity of high OH, low OH silica, and fluoride core fibers

    Science.gov (United States)

    Bilodeau, T. G.; Ewing, K. J.; Nau, G. M.; Aggarwal, I. D.

    1995-06-01

    An in situ study of the effects of ionizing radiation on the strength of the Raman and photoluminescence signal of high OH, low OH, and fluoride core fibers has been performed with 514.5 nm laser excitation. The fibers were irradiated with a 60Co source at a constant dose rate of 560 rads/h. The high OH fiber displayed a much slower decay of the fiber Raman intensity than the other two fibers during irradiation. The fluoride fiber exhibited the quickest decline in Raman signal with the intensity dropping by a factor of 1000 in less than 20 min. The Raman intensity of the low OH silica fiber recovered to greater than 90% of its pre-irradiation value after a post-irradiation photoanneal with 488 nm laser light. The silica fibers displayed an increase in intensity of a broad photoluminescence feature centered at 650 nm. However the fiber photoluminescence intensity remained much weaker than the Raman intensity throughout the irradiations.

  11. Plasmon-Enhanced Photoluminescence of an Amorphous Silicon Quantum Dot Light-Emitting Device by Localized Surface Plasmon Polaritons in Ag/SiOx:a-Si QDs/Ag Sandwich Nanostructures

    Directory of Open Access Journals (Sweden)

    Tsung-Han Tsai

    2015-01-01

    Full Text Available We investigated experimentally the plasmon-enhanced photoluminescence of the amorphous silicon quantum dots (a-Si QDs light-emitting devices (LEDs with the Ag/SiOx:a-Si QDs/Ag sandwich nanostructures, through the coupling between the a-Si QDs and localized surface plasmons polaritons (LSPPs mode, by tuning a one-dimensional (1D Ag grating on the top. The coupling of surface plasmons at the top and bottom Ag/SiOx:a-Si QDs interfaces resulted in the localized surface plasmon polaritons (LSPPs confined underneath the Ag lines, which exhibit the Fabry-Pérot resonance. From the Raman spectrum, it proves the existence of a-Si QDs embedded in Si-rich SiOx film (SiOx:a-Si QDs at a low annealing temperature (300°C to prevent the possible diffusion of Ag atoms from Ag film. The photoluminescence (PL spectra of a-Si QDs can be precisely tuned by a 1D Ag grating with different pitches and Ag line widths were investigated. An optimized Ag grating structure, with 500 nm pitch and 125 nm Ag line width, was found to achieve up to 4.8-fold PL enhancement at 526 nm and 2.46-fold PL integrated intensity compared to the a-Si QDs LEDs without Ag grating structure, due to the strong a-Si QDs-LSPPs coupling.

  12. Quantum Accelerators for High-Performance Computing Systems

    OpenAIRE

    Britt, Keith A.; Mohiyaddin, Fahd A.; Humble, Travis S.

    2017-01-01

    We define some of the programming and system-level challenges facing the application of quantum processing to high-performance computing. Alongside barriers to physical integration, prominent differences in the execution of quantum and conventional programs challenges the intersection of these computational models. Following a brief overview of the state of the art, we discuss recent advances in programming and execution models for hybrid quantum-classical computing. We discuss a novel quantu...

  13. Field-induced spin splitting and anomalous photoluminescence circular polarization in C H3N H3Pb I3 films at high magnetic field

    Science.gov (United States)

    Zhang, Chuang; Sun, Dali; Yu, Zhi-Gang; Sheng, Chuan-Xiang; McGill, Stephen; Semenov, Dmitry; Vardeny, Zeev Valy

    2018-04-01

    The organic-inorganic hybrid perovskites show excellent optical and electrical properties for photovoltaic and a myriad of other optoelectronics applications. Using high-field magneto-optical measurements up to 17.5 T at cryogenic temperatures, we have studied the spin-dependent optical transitions in the prototype C H3N H3Pb I3 , which are manifested in the field-induced circularly polarized photoluminescence emission. The energy splitting between left and right circularly polarized emission bands is measured to be ˜1.5 meV at 17.5 T, from which we obtained an exciton effective g factor of ˜1.32. Also from the photoluminescence diamagnetic shift we estimate the exciton binding energy to be ˜17 meV at low temperature. Surprisingly, the corresponding field-induced circular polarization is "anomalous" in that the photoluminescence emission of the higher split energy band is stronger than that of the lower split band. This "reversed" intensity ratio originates from the combination of long electron spin relaxation time and hole negative g factor in C H3N H3Pb I3 , which are in agreement with a model based on the k.p effective-mass approximation.

  14. Excitonic behavior in self-assembled InAs/GaAs quantum rings in high magnetic fields

    NARCIS (Netherlands)

    Kleemans, N.A.J.M.; Blokland, J.H.; Taboada, A.G.; Genuchten, van H.C.M.; Bozkurt, M.; Fomin, V.M.; Gladilin, V.N.; Granados, D.; Garcia, J.M.; Christianen, P.C.M.; Maan, J.C.; Devreese, J.T.; Koenraad, P.M.

    2009-01-01

    We investigate the exciton energy level structure of a large ensemble of InAs/GaAs quantum rings by photoluminescence spectroscopy in magnetic fields up to 30 T for different excitation densities. The confinement of an electron and a hole in these type I quantum rings along with the Coulomb

  15. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon; Yassitepe, Emre; Voznyy, Oleksandr; Comin, Riccardo; Walters, Grant; Gong, Xiwen; Kanjanaboos, Pongsakorn; Nogueira, Ana F.; Sargent, Edward H.

    2015-01-01

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  16. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon

    2015-11-18

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  17. Stokes and anti-Stokes photoluminescence towards five different In-x(Al0.17Ga0.83)(1-x)As/Al0.17Ga0.83As quantum wells

    DEFF Research Database (Denmark)

    Machida, S.; Tadakuma, T.; Satake, A.

    2005-01-01

    Stokes and anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga0.83)1–xAs/Al0.17Ga0.83As quantum-well (QW) heterostructure consisting of five QWs with different x values. Stokes PL spectra of this sample show a significant difference in PL intensity between...... the wells under indirect excitation conditions due to the existence of competitive resonant and nonresonant capture processes, while they exhibit a rather uniform PL intensity distribution under direct excitation. When the excitation wavelength is tuned to 810 nm for AS-PL detection, it is transparent...... is basically determined by the competitive capture of photoexcited carriers through the thick barriers, generated far from the five wells due to the nonlinear excitation processes in GaAs. ©2005 American Institute of Physics...

  18. Quantum Accelerators for High-performance Computing Systems

    Energy Technology Data Exchange (ETDEWEB)

    Humble, Travis S. [ORNL; Britt, Keith A. [ORNL; Mohiyaddin, Fahd A. [ORNL

    2017-11-01

    We define some of the programming and system-level challenges facing the application of quantum processing to high-performance computing. Alongside barriers to physical integration, prominent differences in the execution of quantum and conventional programs challenges the intersection of these computational models. Following a brief overview of the state of the art, we discuss recent advances in programming and execution models for hybrid quantum-classical computing. We discuss a novel quantum-accelerator framework that uses specialized kernels to offload select workloads while integrating with existing computing infrastructure. We elaborate on the role of the host operating system to manage these unique accelerator resources, the prospects for deploying quantum modules, and the requirements placed on the language hierarchy connecting these different system components. We draw on recent advances in the modeling and simulation of quantum computing systems with the development of architectures for hybrid high-performance computing systems and the realization of software stacks for controlling quantum devices. Finally, we present simulation results that describe the expected system-level behavior of high-performance computing systems composed from compute nodes with quantum processing units. We describe performance for these hybrid systems in terms of time-to-solution, accuracy, and energy consumption, and we use simple application examples to estimate the performance advantage of quantum acceleration.

  19. High-Tc superconductor quantum interference devices

    International Nuclear Information System (INIS)

    1991-01-01

    This patent describes a superconductive quantum interferometric device for sensing a characteristic of a magnetic field. It comprises a substrate having a surface, the substrate being selected from the group which consists of strontium titanate, aluminum oxide, sapphire, ZrO 2 and mixtures thereof; a coating of MgO on the surface of the substrate; two identical thin-strip films of a high-critical temperature superconductor on the coating, each of the films having a pair of mutually parallel arms in the form of superconductor strips extending toward and aligned with super conductor strips forming corresponding arms of the other thin-strip film, and a crossbar strip connecting the arms of each thin-strip film at right angles to the arms, the high-critical-temperature superconductor being selected from the group which consists of yttrium-barium-calcium-copper-oxides, bismuth-strontium-calcium-copper-oxides, thallium-barium-copper-oxides, thallium-barium-calcium-copper-oxides, barium oxide: potassium oxide: bismuth oxides, and calcium oxide: zinc oxide: iron oxides; and insulating films on the coating between corresponding free ends of the arms thin-strip films, the insulating films being composed of a material selected from the group which consists of silicon dioxide, silicon nitride, magnesium oxide and mixture thereof

  20. Highly coalesced quantum beam science (1)

    International Nuclear Information System (INIS)

    Ishiyama, Shintaro

    2014-01-01

    The construction of the large-scale facilities of quantum beam is under way in our country, and these are the facilities to use specific quantum beam individually. For this reason, only limited information brought about from the specific intrinsic performance that the beam has can be obtained. To understand the function and structure of a target substance, it is required to integrate various types of complementary information obtainable from each quantum beam. In FY2009, a leading research and development committee on 'quantum beam integration research' was established in Japan Study for the Promotion of Science, and the establishment of a new technology to integrate quantum beams and the creation of a new research region developed from this integration were examined. This committee defined the new academic research region as 'quantum beam integration science' and examined various fields of the new research region. This paper takes out a material science field among them, and tries the systematization of the new academic research region related to the scientific research on quantum beam integration advanced materials by promoting the following: (1) search for the needs for material science research, (2) examination of integration facilities capable of corresponding to the research needs, and (3) basic integration research for the above. (A.O.)

  1. Synthesis of biocompatible and highly photoluminescent nitrogen doped carbon dots from lime: Analytical applications and optimization using response surface methodology

    Energy Technology Data Exchange (ETDEWEB)

    Barati, Ali [Faculty of Chemistry, Institute for Advanced Studies in Basic Sciences, Zanjan (Iran, Islamic Republic of); Shamsipur, Mojtaba, E-mail: mshamsipur@yahoo.com [Department of Chemistry, Razi University, Kermanshah (Iran, Islamic Republic of); Arkan, Elham [Nano Drug Delivery Research Center Kermanshah University of Medical Sciences, Kermanshah (Iran, Islamic Republic of); Hosseinzadeh, Leila [Novel Drug Delivery Research Center, Faculty of Pharmacy, Kermanshah University of Medical Sciences, Kermanshah (Iran, Islamic Republic of); Abdollahi, Hamid, E-mail: abd@iasbs.ac.ir [Faculty of Chemistry, Institute for Advanced Studies in Basic Sciences, Zanjan (Iran, Islamic Republic of)

    2015-02-01

    Herein, a facile hydrothermal treatment of lime juice to prepare biocompatible nitrogen-doped carbon quantum dots (N-CQDs) in the presence of ammonium bicarbonate as a nitrogen source has been presented. The resulting N-CQDs exhibited excitation and pH independent emission behavior; with the quantum yield (QY) up to 40%, which was several times greater than the corresponding value for CQDs with no added nitrogen source. The N-CQDs were applied as a fluorescent probe for the sensitive and selective detection of Hg{sup 2+} ions with a detection limit of 14 nM. Moreover, the cellular uptake and cytotoxicity of N-CQDs at different concentration ranges from 0.0 to 0.8 mg/ml were investigated by using PC12 cells as a model system. Response surface methodology was used for optimization and systematic investigation of the main variables that influence the QY, including reaction time, reaction temperature, and ammonium bicarbonate weight. - Highlights: • High fluorescent N-doped CQDs from lime juice have been prepared. • Response surface methodology was used to optimize and model the main factors. • N-doped CQDs were used in the selective and sensitive detection of Hg(II). • The biocompatibility of prepared N-doped CQDs was conformed using PC12 cells.

  2. Temperature-dependent photoluminescence and contactless electroreflectance characterization of a ZnxCd1-xSe/Znx'Cdy'Mg1-x'-y'Se asymmetric coupled quantum well structure

    International Nuclear Information System (INIS)

    Wu, J.D.; Huang, Y.S.; Lin, D.Y.; Charles, W.O.; Shen, A.; Tamargo, M.C.; Tiong, K.K.

    2011-01-01

    Research highlights: → We report a detailed study of a ZnxCd 1-x Se/Znx'Cdy'Mg 1-x '-y'Se asymmetric coupled quantum well structure by using temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) techniques. → The PL peak position yielded information of the fundamental excitonic recombinations. → Analysis of the CER spectra led to the identification of various interband transitions. →Study of the temperature dependence of the excitonic transition energies indicated that main influence of temperature on the quantized transitions is through temperature dependence of the constituent material band gap in the well. - Abstract: Temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) were used to characterize a Zn x Cd 1-x Se/Zn x' Cd y' Mg 1-x'-y' Se asymmetric coupled quantum well (ACQW) structure in the range of 10-300 K. The PL peak position yielded information of the fundamental excitonic recombinations. A detailed analysis of the CER spectra led to the identification of various interband transitions. The intersubband transitions were then estimated and found to be in a good agreement with the previous report of Fourier-transform infrared absorption measurements. At low temperature, the PL spectra of the sample showed an asymmetric behavior with an exponential tail at the lower-energy side and were attributed to the localized excitonic recombinations due to potential fluctuations. Detailed study of the temperature dependence of the excitonic transition energies indicated that the main influence of temperature on the quantized transitions is through the temperature dependence of the band gap of the constituent material in the well.

  3. Software Systems for High-performance Quantum Computing

    Energy Technology Data Exchange (ETDEWEB)

    Humble, Travis S [ORNL; Britt, Keith A [ORNL

    2016-01-01

    Quantum computing promises new opportunities for solving hard computational problems, but harnessing this novelty requires breakthrough concepts in the design, operation, and application of computing systems. We define some of the challenges facing the development of quantum computing systems as well as software-based approaches that can be used to overcome these challenges. Following a brief overview of the state of the art, we present models for the quantum programming and execution models, the development of architectures for hybrid high-performance computing systems, and the realization of software stacks for quantum networking. This leads to a discussion of the role that conventional computing plays in the quantum paradigm and how some of the current challenges for exascale computing overlap with those facing quantum computing.

  4. Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

    Science.gov (United States)

    Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

    2018-06-01

    InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

  5. Demonstration of deterministic and high fidelity squeezing of quantum information

    DEFF Research Database (Denmark)

    Yoshikawa, J-I.; Hayashi, T-; Akiyama, T.

    2007-01-01

    , and an ancillary squeezed vacuum state, thus direct interaction between a strong pump and the quantum state is circumvented. We demonstrate three different squeezing levels for a coherent state input. This scheme is highly suitable for the fault-tolerant squeezing transformation in a continuous variable quantum...... computer....

  6. Preparation of carbon quantum dots based high photostability luminescent membranes.

    Science.gov (United States)

    Zhao, Jinxing; Liu, Cui; Li, Yunchuan; Liang, Jiyuan; Liu, Jiyan; Qian, Tonghui; Ding, Jianjun; Cao, Yuan-Cheng

    2017-06-01

    Urethane acrylate (UA) was used to prepare carbon quantum dots (C-dots) luminescent membranes and the resultants were examined with FT-IR, mechanical strength, scanning electron microscope (SEM) and quantum yields (QYs). FT-IR results showed the polyurethane acrylate (PUA) prepolymer -C = C-vibration at 1101 cm -1 disappeared but there was strong vibration at1687cm -1 which was contributed from the-C = O groups in cross-linking PUA. Mechanical strength results showed that the different quantity of C-dots loadings and UV-curing time affect the strength. SEM observations on the cross-sections of the membranes are uniform and have no structural defects, which prove that the C-dots are compatible with the water-soluble PUA resin. The C-dot loading was increased from 0 to 1 g, the maximum tensile stress was nearly 2.67 MPa, but the tensile strain was decreased from 23.4% to 15.1% and 7.2% respectively. QYs results showed that the C-dots in the membrane were stable after 120 h continuous irradiation. Therefore, the C-dots photoluminescent film is the promising material for the flexible devices in the future applications. Copyright © 2016 John Wiley & Sons, Ltd.

  7. High-speed noise-free optical quantum memory

    Science.gov (United States)

    Kaczmarek, K. T.; Ledingham, P. M.; Brecht, B.; Thomas, S. E.; Thekkadath, G. S.; Lazo-Arjona, O.; Munns, J. H. D.; Poem, E.; Feizpour, A.; Saunders, D. J.; Nunn, J.; Walmsley, I. A.

    2018-04-01

    Optical quantum memories are devices that store and recall quantum light and are vital to the realization of future photonic quantum networks. To date, much effort has been put into improving storage times and efficiencies of such devices to enable long-distance communications. However, less attention has been devoted to building quantum memories which add zero noise to the output. Even small additional noise can render the memory classical by destroying the fragile quantum signatures of the stored light. Therefore, noise performance is a critical parameter for all quantum memories. Here we introduce an intrinsically noise-free quantum memory protocol based on two-photon off-resonant cascaded absorption (ORCA). We demonstrate successful storage of GHz-bandwidth heralded single photons in a warm atomic vapor with no added noise, confirmed by the unaltered photon-number statistics upon recall. Our ORCA memory meets the stringent noise requirements for quantum memories while combining high-speed and room-temperature operation with technical simplicity, and therefore is immediately applicable to low-latency quantum networks.

  8. Quantum data locking for high-rate private communication

    International Nuclear Information System (INIS)

    Lupo, Cosmo; Lloyd, Seth

    2015-01-01

    We show that, if the accessible information is used as a security quantifier, quantum channels with a certain symmetry can convey private messages at a tremendously high rate, as high as less than one bit below the rate of non-private classical communication. This result is obtained by exploiting the quantum data locking effect. The price to pay to achieve such a high private communication rate is that accessible information security is in general not composable. However, composable security holds against an eavesdropper who is forced to measure her share of the quantum system within a finite time after she gets it. (paper)

  9. Synthesis of a new ONNO donor tetradentate schiff base ligand and binuclear Cu(II) complex: Quantum chemical, spectroscopic and photoluminescence investigations

    International Nuclear Information System (INIS)

    Sarıoğlu, Ahmet Oral; Ceylan, Ümit; Yalçın, Şerife Pınar; Sönmez, Mehmet; Ceyhan, Gökhan; Aygün, Muhittin

    2016-01-01

    The Schiff base compound 3,3′-(1,4-phenylimino)-bis-[1,3-bis-(4-methoxyphenyl) propan-1-one)], formulated as C 40 H 36 N 2 O 6, and its Cu(II) complex were synthesized and characterized by analytical analysis, various spectral techniques such as FT-IR, NMR, UV–vis, magnetic measurements and molar conductivity. Thermo gravimetric analysis (TGA and DTA) carried out to obtain information about its thermal stability. The molecular structure and spectroscopic properties of the ligand were obtained with FT-IR, 1 H and 13 C NMR, UV–vis investigations as experimentally and compared with theoretical results obtained from DFT/B3LYP/6-311++G(d,p) basis set. In addition to molecular calculations of the title compound, molecular electrostatic potential (MEP), dipole moments, atomic charges, HOMO–LUMO, NLO and NBO analysis were computed. The calculated results show that the optimized geometry can well reproduce the crystal structure parameters, and the theoretical vibrational frequencies, 1 H and 13 C NMR chemical shifts show good agreement with experimental values. Photoluminescence properties of the ligand and its Cu(II) complex were examined. - Highlights: • FT-IR and 1 H– 13 C NMR spectra were recorded and compared with the theoretical results. • The photoluminescence properties were studied. • NLO, NBO analysis of the molecule were studied. • HOMO and LUMO energies, MEP distribution of the molecule were calculated.

  10. Quantum data locking for high-rate private communication

    OpenAIRE

    Lupo, Cosmo; Lloyd, Seth

    2015-01-01

    We show that, if the accessible information is used as a security quantifier, quantum channels with a certain symmetry can convey private messages at a tremendously high rate, as high as less than one bit below the rate of non-private classical communication. This result is obtained by exploiting the quantum data locking effect. The price to pay to achieve such a high private communication rate is that accessible information security is in general not composable. However, composable security ...

  11. Quantum dot-polymer conjugates for stable luminescent displays.

    Science.gov (United States)

    Ghimire, Sushant; Sivadas, Anjaly; Yuyama, Ken-Ichi; Takano, Yuta; Francis, Raju; Biju, Vasudevanpillai

    2018-05-23

    The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices. One of the primary requirements for such real-world applications of quantum dots is their stable and uniform distribution in optically transparent matrices. In this work, we prepare transparent thin films of polymer-quantum dot conjugates, where CdSe/ZnS quantum dots are uniformly distributed at high densities in a chitosan-polystyrene copolymer (CS-g-PS) matrix. Here, quantum dots in an aqueous solution are conjugated to the copolymer by a phase transfer reaction. With the stable conjugation of quantum dots to the copolymer, we prevent undesired phase separation between the two and aggregation of quantum dots. Furthermore, the conjugate allows us to prepare transparent thin films in which quantum dots are uniformly distributed at high densities. The CS-g-PS copolymer helps us in not only preserving the photoluminescence properties of quantum dots in the film but also rendering excellent photostability to quantum dots at the ensemble and single particle levels, making the conjugate a promising material for photoluminescence-based devices.

  12. High Efficiency Quantum Well Waveguide Solar Cells, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The long-term objective of this program is to develop flexible, lightweight, single-junction solar cells using quantum structured designs that can achieve ultra-high...

  13. Double Tunneling Injection Quantum Dot Lasers for High Speed Operation

    Science.gov (United States)

    2017-10-23

    Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation The views, opinions and/or findings contained in this report are those of...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6...State University Title: Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation Report Term: 0-Other Email: asryan@vt.edu Distribution

  14. Photoluminescence study of high energy proton irradiation on Cu(In,Ga)Se{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Bonhyeong [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Lee, June Hyuk [Neutron Science Division, Korea Atomic Energy Research Institute (KAERI), 989-111 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Shin, Donghyeop [Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708 (United States); Ahn, Byung Tae, E-mail: btahn@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Shin, Byungha, E-mail: byungha@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

    2016-03-31

    We have studied the effect of proton irradiation on Cu(In,Ga)Se{sub 2} (CIGS) thin films using photoluminescence (PL). We used a 10 MeV proton beam with varying doses from 10{sup 9} to 10{sup 12} cm{sup −2}. Intensity-dependent low temperature PL measurements suggest that the proton irradiation does not create a new defect level but instead changes the number of preexisting defects in the detection range of the PL system. By comparing PL spectra after the proton irradiation with those obtained after thermal annealing under inert gas as well as under hydrogen gas ambient, we find that the irradiation-induced change in the defect structure does not originate from the incorporation of hydrogen but from energetics of the irradiating particles. Electrical resistivity of the proton irradiated CIGS thin films is shown to decrease after the proton irradiation, and this is explained by the reduction of the concentration of compensating donor-like defects, specifically selenium vacancies, based on the PL results. - Highlights: • Photoluminescence study of 10 MeV proton irradiation on CIGS at 10 K. • Irradiation modified population of existing defects without introducing new levels. • Changes in CIGS by 10 MeV irradiation are due to energetics of irradiating protons.

  15. Semiconducting tin and lead iodide perovskites with organic cations: phase transitions, high mobilities, and near-infrared photoluminescent properties.

    Science.gov (United States)

    Stoumpos, Constantinos C; Malliakas, Christos D; Kanatzidis, Mercouri G

    2013-08-05

    A broad organic-inorganic series of hybrid metal iodide perovskites with the general formulation AMI3, where A is the methylammonium (CH3NH3(+)) or formamidinium (HC(NH2)2(+)) cation and M is Sn (1 and 2) or Pb (3 and 4) are reported. The compounds have been prepared through a variety of synthetic approaches, and the nature of the resulting materials is discussed in terms of their thermal stability and optical and electronic properties. We find that the chemical and physical properties of these materials strongly depend on the preparation method. Single crystal X-ray diffraction analysis of 1-4 classifies the compounds in the perovskite structural family. Structural phase transitions were observed and investigated by temperature-dependent single crystal X-ray diffraction in the 100-400 K range. The charge transport properties of the materials are discussed in conjunction with diffuse reflectance studies in the mid-IR region that display characteristic absorption features. Temperature-dependent studies show a strong dependence of the resistivity as a function of the crystal structure. Optical absorption measurements indicate that 1-4 behave as direct-gap semiconductors with energy band gaps distributed in the range of 1.25-1.75 eV. The compounds exhibit an intense near-IR photoluminescence (PL) emission in the 700-1000 nm range (1.1-1.7 eV) at room temperature. We show that solid solutions between the Sn and Pb compounds are readily accessible throughout the composition range. The optical properties such as energy band gap, emission intensity, and wavelength can be readily controlled as we show for the isostructural series of solid solutions CH3NH3Sn(1-x)Pb(x)I3 (5). The charge transport type in these materials was characterized by Seebeck coefficient and Hall-effect measurements. The compounds behave as p- or n-type semiconductors depending on the preparation method. The samples with the lowest carrier concentration are prepared from solution and are n-type; p

  16. High-Dimensional Quantum Information Processing with Linear Optics

    Science.gov (United States)

    Fitzpatrick, Casey A.

    Quantum information processing (QIP) is an interdisciplinary field concerned with the development of computers and information processing systems that utilize quantum mechanical properties of nature to carry out their function. QIP systems have become vastly more practical since the turn of the century. Today, QIP applications span imaging, cryptographic security, computation, and simulation (quantum systems that mimic other quantum systems). Many important strategies improve quantum versions of classical information system hardware, such as single photon detectors and quantum repeaters. Another more abstract strategy engineers high-dimensional quantum state spaces, so that each successful event carries more information than traditional two-level systems allow. Photonic states in particular bring the added advantages of weak environmental coupling and data transmission near the speed of light, allowing for simpler control and lower system design complexity. In this dissertation, numerous novel, scalable designs for practical high-dimensional linear-optical QIP systems are presented. First, a correlated photon imaging scheme using orbital angular momentum (OAM) states to detect rotational symmetries in objects using measurements, as well as building images out of those interactions is reported. Then, a statistical detection method using chains of OAM superpositions distributed according to the Fibonacci sequence is established and expanded upon. It is shown that the approach gives rise to schemes for sorting, detecting, and generating the recursively defined high-dimensional states on which some quantum cryptographic protocols depend. Finally, an ongoing study based on a generalization of the standard optical multiport for applications in quantum computation and simulation is reported upon. The architecture allows photons to reverse momentum inside the device. This in turn enables realistic implementation of controllable linear-optical scattering vertices for

  17. Blue photoluminescent carbon nanodots from limeade

    Energy Technology Data Exchange (ETDEWEB)

    Suvarnaphaet, Phitsini [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Tiwary, Chandra Sekhar [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Wetcharungsri, Jutaphet; Porntheeraphat, Supanit [NECTEC, National Science and Technology Development Agency (NSTDA), Thailand Science Park, Pathumthani 12120 (Thailand); Hoonsawat, Rassmidara [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Ajayan, Pulickel Madhavapanicker [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Tang, I-Ming [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); Department of Material Science, Faculty of Science, Kasetsart University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Asanithi, Piyapong, E-mail: asanithi@hotmail.com [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand)

    2016-12-01

    Carbon-based photoluminescent nanodot has currently been one of the promising materials for various applications. The remaining challenges are the carbon sources and the simple synthetic processes that enhance the quantum yield, photostability and biocompatibility of the nanodots. In this work, the synthesis of blue photoluminescent carbon nanodots from limeade via a single-step hydrothermal carbonization process is presented. Lime carbon nanodot (L-CnD), whose the quantum yield exceeding 50% for the 490 nm emission in gram-scale amounts, has the structure of graphene core functionalized with the oxygen functional groups. The micron-sized flake of the as-prepared L-CnD powder exhibits multicolor emission depending on an excitation wavelength. The L-CnDs are demonstrated for rapidly ferric-ion (Fe{sup 3+}) detection in water compared to Fe{sup 2+}, Cu{sup 2+}, Co{sup 2+}, Zn{sup 2+}, Mn{sup 2+} and Ni{sup 2+} ions. The photoluminescence quenching of L-CnD solution under UV light is used to distinguish the Fe{sup 3+} ions from others by naked eyes as low concentration as 100 μM. Additionally, L-CnDs provide exceptional photostability and biocompatibility for imaging yeast cell morphology. Changes in morphology of living yeast cells, i.e. cell shape variation, and budding, can be observed in a minute-period until more than an hour without the photoluminescent intensity loss. - Highlights: • Photoluminescent carbon nanodots are synthesized from limeade. • The quantum yield of lime carbon nanodots is higher than 50%. • The lime carbon nanodots can be applied for detecting of Fe{sup 3+} ions and for imaging living yeast cells.

  18. Photoluminescence, energy transfer and tunable color of Ce(3+), Tb(3+) and Eu(2+) activated oxynitride phosphors with high brightness.

    Science.gov (United States)

    Lü, Wei; Huo, Jiansheng; Feng, Yang; Zhao, Shuang; You, Hongpeng

    2016-06-21

    New tuneable light-emitting Ca3Al8Si4O17N4:Ce(3+)/Tb(3+)/Eu(2+) oxynitride phosphors with high brightness have been prepared. When doped with trivalent cerium or divalent europium they present blue luminescence under UV excitation. The energy transfer from Ce(3+) to Tb(3+) and Ce(3+) to Eu(2+) ions is deduced from the spectral overlap between Ce(3+) emission and Tb(3+)/Eu(2+) excitation spectra. The energy-transfer efficiencies and corresponding mechanisms are discussed in detail, and the mechanisms of energy transfer from the Ce(3+) to Tb(3+) and Ce(3+) to Eu(2+) ions are demonstrated to be a dipole-quadrupole and dipole-dipole mechanism, respectively, by the Inokuti-Hirayama model. The International Commission on Illumination value of color tuneable emission as well as luminescence quantum yield (23.8-80.6%) can be tuned by controlling the content of Ce(3+), Tb(3+) and Eu(2+). All results suggest that they are suitable for UV light-emitting diode excitation.

  19. High efficiency transfer of quantum information and multiparticle entanglement generation in translation-invariant quantum chains

    International Nuclear Information System (INIS)

    Plenio, Martin B; Semiao, Fernando L

    2005-01-01

    We demonstrate that a translation-invariant chain of interacting quantum systems can be used for high efficiency transfer of quantum entanglement and the generation of multiparticle entanglement over large distances and between arbitrary sites without the requirement of precise spatial or temporal control. The scheme is largely insensitive to disorder and random coupling strengths in the chain. We discuss harmonic oscillator systems both in the case of arbitrary Gaussian states and in situations when at most one excitation is in the system. The latter case, which we prove to be equivalent to an xy-spin chain, may be used to generate genuine multiparticle entanglement. Such a 'quantum data bus' may prove useful in future solid state architectures for quantum information processing

  20. Experimental quantum error correction with high fidelity

    International Nuclear Information System (INIS)

    Zhang Jingfu; Gangloff, Dorian; Moussa, Osama; Laflamme, Raymond

    2011-01-01

    More than ten years ago a first step toward quantum error correction (QEC) was implemented [Phys. Rev. Lett. 81, 2152 (1998)]. The work showed there was sufficient control in nuclear magnetic resonance to implement QEC, and demonstrated that the error rate changed from ε to ∼ε 2 . In the current work we reproduce a similar experiment using control techniques that have been since developed, such as the pulses generated by gradient ascent pulse engineering algorithm. We show that the fidelity of the QEC gate sequence and the comparative advantage of QEC are appreciably improved. This advantage is maintained despite the errors introduced by the additional operations needed to protect the quantum states.

  1. High-order quantum algorithm for solving linear differential equations

    International Nuclear Information System (INIS)

    Berry, Dominic W

    2014-01-01

    Linear differential equations are ubiquitous in science and engineering. Quantum computers can simulate quantum systems, which are described by a restricted type of linear differential equations. Here we extend quantum simulation algorithms to general inhomogeneous sparse linear differential equations, which describe many classical physical systems. We examine the use of high-order methods (where the error over a time step is a high power of the size of the time step) to improve the efficiency. These provide scaling close to Δt 2 in the evolution time Δt. As with other algorithms of this type, the solution is encoded in amplitudes of the quantum state, and it is possible to extract global features of the solution. (paper)

  2. QSPIN: A High Level Java API for Quantum Computing Experimentation

    Science.gov (United States)

    Barth, Tim

    2017-01-01

    QSPIN is a high level Java language API for experimentation in QC models used in the calculation of Ising spin glass ground states and related quadratic unconstrained binary optimization (QUBO) problems. The Java API is intended to facilitate research in advanced QC algorithms such as hybrid quantum-classical solvers, automatic selection of constraint and optimization parameters, and techniques for the correction and mitigation of model and solution errors. QSPIN includes high level solver objects tailored to the D-Wave quantum annealing architecture that implement hybrid quantum-classical algorithms [Booth et al.] for solving large problems on small quantum devices, elimination of variables via roof duality, and classical computing optimization methods such as GPU accelerated simulated annealing and tabu search for comparison. A test suite of documented NP-complete applications ranging from graph coloring, covering, and partitioning to integer programming and scheduling are provided to demonstrate current capabilities.

  3. Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Loh Ter-Hoe

    2007-01-01

    Full Text Available AbstractSi/Si0.66Ge0.34coupled quantum well (CQW structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD system. The samples were characterized using high resolution x-ray diffraction (HRXRD, cross-sectional transmission electron microscopy (XTEM and photoluminescence (PL spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

  4. Near-infrared InN quantum dots on high-In composition InGaN

    Energy Technology Data Exchange (ETDEWEB)

    Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2013-04-01

    We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

  5. (110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T-shaped quantum wires

    DEFF Research Database (Denmark)

    Gislason, Hannes; Sørensen, Claus Birger; Hvam, Jørn Märcher

    1996-01-01

    High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T-shaped GaAs/AlGaAs quantum wires, We investigate theoretically and experimentally 20-200 Angstrom wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved...... edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Angstrom is derived from the photoluminescence linewidths. The growth rate...

  6. Spectrally high performing quantum cascade lasers

    Science.gov (United States)

    Toor, Fatima

    Quantum cascade (QC) lasers are versatile semiconductor light sources that can be engineered to emit light of almost any wavelength in the mid- to far-infrared (IR) and terahertz region from 3 to 300 mum [1-5]. Furthermore QC laser technology in the mid-IR range has great potential for applications in environmental, medical and industrial trace gas sensing [6-10] since several chemical vapors have strong rovibrational frequencies in this range and are uniquely identifiable by their absorption spectra through optical probing of absorption and transmission. Therefore, having a wide range of mid-IR wavelengths in a single QC laser source would greatly increase the specificity of QC laser-based spectroscopic systems, and also make them more compact and field deployable. This thesis presents work on several different approaches to multi-wavelength QC laser sources that take advantage of band-structure engineering and the uni-polar nature of QC lasers. Also, since for chemical sensing, lasers with narrow linewidth are needed, work is presented on a single mode distributed feedback (DFB) QC laser. First, a compact four-wavelength QC laser source, which is based on a 2-by-2 module design, with two waveguides having QC laser stacks for two different emission wavelengths each, one with 7.0 mum/11.2 mum, and the other with 8.7 mum/12.0 mum is presented. This is the first design of a four-wavelength QC laser source with widely different emission wavelengths that uses minimal optics and electronics. Second, since there are still several unknown factors that affect QC laser performance, results on a first ever study conducted to determine the effects of waveguide side-wall roughness on QC laser performance using the two-wavelength waveguides is presented. The results are consistent with Rayleigh scattering effects in the waveguides, with roughness effecting shorter wavelengths more than longer wavelengths. Third, a versatile time-multiplexed multi-wavelength QC laser system that

  7. Quantum correlation of high dimensional system in a dephasing environment

    Science.gov (United States)

    Ji, Yinghua; Ke, Qiang; Hu, Juju

    2018-05-01

    For a high dimensional spin-S system embedded in a dephasing environment, we theoretically analyze the time evolutions of quantum correlation and entanglement via Frobenius norm and negativity. The quantum correlation dynamics can be considered as a function of the decoherence parameters, including the ratio between the system oscillator frequency ω0 and the reservoir cutoff frequency ωc , and the different environment temperature. It is shown that the quantum correlation can not only measure nonclassical correlation of the considered system, but also perform a better robustness against the dissipation. In addition, the decoherence presents the non-Markovian features and the quantum correlation freeze phenomenon. The former is much weaker than that in the sub-Ohmic or Ohmic thermal reservoir environment.

  8. Thermal activation of carriers from semiconductor quantum wells

    International Nuclear Information System (INIS)

    Johnston, M.B.; Herz, L.M.; Dao, L.V.; Gal, M.; Tan, H.H.; Jagadish, C.

    1999-01-01

    Full text: We have conducted a systematic investigation of the thermal excitation of carriers in confined states of quantum wells. Carriers may be injected into a sample containing a quantum well electrically or optically, once there they rapidly thermalise and are captured by the confined state of the quantum well. Typically electrons and holes recombine radiatively from their respective quantum well states. As a quantum well sample is heated from low temperatures (∼10K), phonon interactions increase which leads to carriers being excited from the well region into the higher energy, barrier region of the sample. Since carrier recombination from barrier regions is via non-radiative processes, there is strong temperature dependence of photoluminescence from the quantum well region. We measured quantum well photoluminescence as a function of excitation intensity and wavelength over the temperature range from 8K to 300K. In high quality InGaAs quantum wells we found unexpected intensity dependence of the spectrally integrated temperature dependent photoluminescence. We believe that this is evidence for by the existence of saturable states at the interfaces of the quantum wells

  9. Aqueous synthesis of high bright Ag{sub 2}Se−ZnSe quantum dots with tunable near-infrared emission

    Energy Technology Data Exchange (ETDEWEB)

    Che, Dongchen; Ding, Di [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Wang, Hongzhi, E-mail: wanghz@dhu.edu.cn [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Zhang, Qinghong [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Li, Yaogang, E-mail: yaogang_li@dhu.edu.cn [Engineering Research Center of Advanced Glass Manufacturing Technology, Ministry of Education, Donghua University, Shanghai 201602 (China)

    2016-09-05

    Efficient aqueous synthetic methods for near-infrared quantum dots as bioimaging agents are urgently required. In this work, a simple and fast synthesis of highly luminescent, near-infrared Ag{sub 2}Se quantum dots (QDs) in aqueous media is reported. The method avoids high temperature, pressure and organic solvents to directly generate water-dispersible Ag{sub 2}Se QDs. The photoluminescence emission of Ag{sub 2}Se QDs ranges from 835 to 940 nm by different Ag:Se molar ratio. Using the ZnSe as a shell, the quantum yield reaches up to 42%. The Ag{sub 2}Se−ZnSe QDs with high quantum yield, near-infrared and low cytotoxic could be used as good cell labels, showing great potential applications in bio-imaging. - Highlights: • Ag{sub 2}Se−ZnSe nanocrystals are prepared directly in aqueous media at low temperature. • Ag{sub 2}Se−ZnSe nanocrystals show excellent water solubility and colloidal stability. • Ag{sub 2}Se nanocrystals exhibit tunable near-infrared emission with ultrasmall size. • Ag{sub 2}Se−ZnSe nanocrystals show high quantum yield with low cytotoxicity. • Ag{sub 2}Se−ZnSe nanocrystals are stable over a month at room temperature in the air.

  10. Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Alderighi, D.; Vinattieri, A.; Colocci, M. [Ist. Nazionale Fisica della Materia, Firenze (Italy); Dipt. di Fisica and LENS, Firenze (Italy); Bogani, F. [Ist. Nazionale Fisica della Materia, Firenze (Italy); Dipt. di Energetica, Firenze (Italy); Gottardo, S. [Dipt. di Fisica and LENS, Firenze (Italy); Grandjean, N.; Massies, J. [Centre de Recherche sur l' Hetero-Epitaxie et ses Applications, CNRS, Valbonne (France)

    2001-01-01

    We present an experimental study of the exciton and phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells (QW) by means of picosecond time-resolved photoluminescence (PL) measurements. A non-exponential decay is observed both at the zero phonon line (ZPL) and at the n = 1 LO replica. Time-resolved spectra unambiguously assign the replica to the free exciton A recombination. Optical migration effects are detected both in the epilayer and the QWs samples and disappear as the temperature increases up to 60-90 K. Even though the sample quality is comparable to state-of-the-art samples, localization effects dominate the exciton dynamics at low temperature in the studied GaN based structures. (orig.)

  11. Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

    International Nuclear Information System (INIS)

    Ha, Neul; Kuroda, Takashi; Liu, Xiangming; Mano, Takaaki; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki; Castellano, Andrea; Sanguinetti, Stefano

    2014-01-01

    We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C 3v symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks

  12. The effect of ultraviolet irradiation on the photothermal, photoluminescence and photoluminescence excitation spectra of Mn-doped ZnS nanoparticles

    International Nuclear Information System (INIS)

    Briones Cruz, Almira; Shen Qing; Toyoda, Taro

    2006-01-01

    Research involving Mn doped nanocrystalline ZnS (ZnS:Mn) has grown in recent years, partly due to the high quantum luminescence efficiencies that have been reported. We measured the photoacoustic (PA), the photoluminescence (PL) and the photoluminescence excitation (PLE) spectra of surface-passivated and unpassivated ZnS:Mn. The effects of UV irradiation on the PL and PLE spectra were also studied. A decrease in the PA intensity after UV exposure was observed for the ZnS:Mn, indicating a decrease in the nonradiative relaxation probability. The observed increase in PL intensity indicates a corresponding increase in the radiative transition probability. For the PLE spectra, possible aggregation of the primary particles could have resulted in the lower measured energy of the PLE peak compared to the value predicted by the effective mass approximation theory

  13. Highly sensitive and stable Ag@SiO2 nanocubes for label-free SERS-photoluminescence detection of biomolecules

    Science.gov (United States)

    Nguyen, Minh-Kha; Su, Wei-Nien; Chen, Ching-Hsiang; Rick, John; Hwang, Bing-Joe

    2017-03-01

    Surface-enhanced Raman scattering (SERS) and fluorescence microscopy are a widely used biological and chemical characterization techniques. However, the peak overlapping in multiplexed experiments and rapid photobleaching of fluorescent organic dyes is still the limitations. When compared to Ag nanocubes (NCs), higher SERS sensitivities can be obtained with thin shelled silica Ag@SiO2 NCs, in contrast metal-enhanced photoluminescence (MEPL) is only found with NCs that have thicker silica shells. A 'dual functionality' represented by the simultaneous strengthening of SERS and MEPL signals can be achieved by mixing Ag@SiO2 NCs, with a silica shell thickness of 1.5 nm and 4.4 nm. This approach allows both the Ag@SiO2 NCs SERS and MEPL sensitivities to be maintained at 90% after 12 weeks of storage. Based on the distinguished detection of creatinine and flavin adenine dinucleotide in the mixture, the integration of SERS and MEPL together on a stable single plasmonic nanoparticle platform offers an opportunity to enhance both biomarker detection sensitivity and specificity.

  14. Nanomedicine photoluminescence crystal-inspired brain sensing approach

    Science.gov (United States)

    Fang, Yan; Wang, Fangzhen; Wu, Rong

    2018-02-01

    Precision sensing needs to overcome a gap of a single atomic step height standard. In response to the cutting-edge challenge, a heterosingle molecular nanomedicine crystal was developed wherein a nanomedicine crystal height less than 1 nm was designed and selfassembled on a substrate of either a highly ordered and freshly separated graphite or a N-doped silicon with hydrogen bonding by a home-made hybrid system of interacting single bioelectron donor-acceptor and a single biophoton donor-acceptor according to orthogonal mathematical optimization scheme, and an atomic spatial resolution conducting atomic force microscopy (C-AFM) with MHz signal processing by a special transformation of an atomic force microscopy (AFM) and a scanning tunneling microscopy (STM) were employed, wherein a z axis direction UV-VIS laser interferometer and a feedback circuit were used to achieve the minimized uncertainty of a micro-regional structure height and its corresponding local differential conductance quantization (spin state) process was repeatedly measured with a highly time resolution, as well as a pulsed UV-VIS laser micro-photoluminescence (PL) spectrum with a single photon resolution was set up by traceable quantum sensing and metrology relied up a quantum electrical triangle principle. The coupling of a single bioelectron conducting, a single biophoton photoluminescence, a frequency domain temporal spin phase in nanomedicine crystal-inspired sensing methods and sensor technologies were revealed by a combination of C-AFM and PL measurement data-based mathematic analyses1-3, as depicted in Figure 1 and repeated in nanomedicine crystals with a single atomic height. It is concluded that height-current-phase uncertainty correlation pave a way to develop a brain imaging and a single atomic height standard, quantum sensing, national security, worldwide impact1-3 technology and beyond.

  15. High frequency response of open quantum dots

    International Nuclear Information System (INIS)

    Brunner, R.; Meisels, R.; Kuchar, F.; Ferry, D.; Elhassan, M.; Ishibashi, K.

    2002-01-01

    Full text: We investigate the response of the transport through open quantum dots to millimeterwave radiation (up to 55 GHz). In the low-field region ( 11 cm -2 and a mobility of 1.2 10 6 cm 2 /Vs. By applying a sufficiently negative voltage to the gates the 2DES is split into two regions connected only by a dot-like region (about 350 nm diameter) between them. The DC data exhibit backscattering peaks at fields of a few tenth of a Tesla. Shubnikovde- Haas (SdH) oscillations appear above 0.5 T. While the SdH oscillations show the usual temperature dependence, the backscattering peaks are temperature independent up to 2.5 K. The backscattering peak shows a reduction of 10 percent due to the millimeterwave irradiation. However, due to the temperature independence of this peak, this reduction cannot simply be attributed to electron heating. This conclusion is supported by the observation of a strong frequency dependence of the reduction of the peak height. (author)

  16. Luminous composite ultrathin films of CdTe quantum dots/silk fibroin co-assembled with layered doubled hydroxide: Enhanced photoluminescence and biosensor application

    Directory of Open Access Journals (Sweden)

    Muhammad Sohail Haroone

    2018-06-01

    Full Text Available Quantum dots (QDs luminescent films are extensively applied to optoelectronics and optical devices. However, QDs aggregation results in the quenching of their fluorescence property which limits their practical applications to a greater extent. In order to resolve this issue, 3-mercaptopropionic acid (3-MPA functionalized Cadmium Tellurium (CdTe QDs were stabilized by silk fibroin (SB and co-assembled with layered doubled hydroxide (LDH to form (QDs@SF/LDHn ultrathin films (UTFs via the layer-by-layer (LBL technique. UV–Vis absorption and fluorescence spectroscopy showed a stepwise and normal growth of the films upon increasing the number of deposition cycles. XRD and AFM studies confirmed the formation of a periodic layered structure and regular surface morphology of the thin films. As compared to (CdTe QDs/LDHnUTFs, the (CdTe QDs@SF/LDHnUTFs displayed fluorescence enhancement and longer fluorescent lifetime, both in solid states and aqueous solutions. Furthermore compared with the solution state, the fluorescence enhancement of SF-RC and SF-β are, respectively, 7 times and 17 times in the (CdTe QDs@SF/LDHn UTFs, indicating that the LDH nanosheets favor the fluorescence enhancement effect on the CdTe QDs@SF. The fabricated materials displayed fluorescence response to a biological molecule such as immune globulin, lgG. Thus, the (CdTe QDs@SF/LDHn UTFs has a potential to be used as biosensor. Keywords: CdTe quantum dots, Silk fibroin, Layered doubled hydroxide, Co-assembly, Fluorescence enhancement

  17. Rapid single flux quantum logic in high temperature superconductor technology

    NARCIS (Netherlands)

    Shunmugavel, K.

    2006-01-01

    A Josephson junction is the basic element of rapid single flux quantum logic (RSFQ) circuits. A high operating speed and low power consumption are the main advantages of RSFQ logic over semiconductor electronic circuits. To realize complex RSFQ circuits in HTS technology one needs a reproducible

  18. Towards a high-speed quantum random number generator

    Science.gov (United States)

    Stucki, Damien; Burri, Samuel; Charbon, Edoardo; Chunnilall, Christopher; Meneghetti, Alessio; Regazzoni, Francesco

    2013-10-01

    Randomness is of fundamental importance in various fields, such as cryptography, numerical simulations, or the gaming industry. Quantum physics, which is fundamentally probabilistic, is the best option for a physical random number generator. In this article, we will present the work carried out in various projects in the context of the development of a commercial and certified high speed random number generator.

  19. Quantum Entanglement and High Brightness Laser Source

    Data.gov (United States)

    National Aeronautics and Space Administration — Our focus is on demonstrating high precision (sub-micron) laser ranging for Navigation using a unique high-sensitivity optical correlation receiver with both...

  20. Highly Nonclassical Quantum States and Environment Induced Decoherence

    Science.gov (United States)

    Foldi, Peter

    2004-06-01

    In this thesis concrete quantum systems are investigated in the framework of the environment induced decoherence. The focus is on the dynamics of highly nonclassical quantum states, the Wigner function of which are negative over some regions of their domains. One of the chosen physical systems is a diatomic molecule, where the potential energy of the nuclei is an anharmonic function of their distance. A system of two-level atoms, which can be important from the viewpoint of quantum information technology, is also investigated. A method is described that is valid in both systems and can determine the characteristic time of the decoherence in a dynamical way. The direction of the decoherence and its relation to energy dissipation is also studied. Finally, a scheme is proposed that can prepare decoherence-free states using the experimental techniques presently available.

  1. High-Rate Strong-Signal Quantum Cryptography

    Science.gov (United States)

    Yuen, Horace P.

    1996-01-01

    Several quantum cryptosystems utilizing different kinds of nonclassical lights, which can accommodate high intensity fields and high data rate, are described. However, they are all sensitive to loss and both the high rate and the strong-signal character rapidly disappear. A squeezed light homodyne detection scheme is proposed which, with present-day technology, leads to more than two orders of magnitude data rate improvement over other current experimental systems for moderate loss.

  2. Photoluminescence and structural studies of Tb and Eu implanted at high temperatures into SiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Bregolin, F.L. [Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Av. Bento Goncalves 9500, 91501-970, Porto Alegre-RS (Brazil); Sias, U.S., E-mail: uilson.sias@gmail.com [Instituto Federal Sul-rio-grandense, Campus Pelotas, Praca 20 de Setembro 455, 96015-360, Pelotas-RS (Brazil); Behar, M. [Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Av. Bento Goncalves 9500, 91501-970, Porto Alegre-RS (Brazil)

    2013-03-15

    The present work deals with the photoluminescence (PL) emitted from Eu and Tb ions implanted at room temperature (RT) up to 350 Degree-Sign C in a SiO{sub 2} matrix, followed by a further anneal process. The ions were implanted with energy of 100 keV and a fluence of 3 Multiplication-Sign 10{sup 15} ions/cm Superscript-Two . Further anneals were performed in atmospheres of N{sub 2} or O{sub 2} with temperatures ranging from 500 up to 800 Degree-Sign C. PL measurements were performed at RT and structural measurements were done via transmission electron microscopy (TEM). In addition, the Rutherford backscattering technique (RBS) was used to investigate the corresponding ion depth profiles. For Tb, the optimal implantation temperature was 200 Degree-Sign C, and the anneal one was of 500 Degree-Sign C. Under these conditions, the PL yield of the sharp band centered at 550 nm was significatively higher than the one obtained with RT implants. The PL spectra corresponding to the Eu ions show two bands, one narrow centered around 650 nm and a second broad one in the blue-green region. The implantation temperature plays a small influence on the PL shape and yield. However, the annealing atmosphere has a strong influence on it. Samples annealed in N{sub 2} present a broad PL band, ranging from 370 up to 840 nm. On the other hand, the O{sub 2} anneal conserves the original as-implanted spectrum, that is: a broad PL band in the blue-green region together with sharp PL band in the red one. For both ions, Tb and Eu, the TEM analyses indicate the formation of nanoclusters in the hot as-implanted samples. - Highlights: Black-Right-Pointing-Pointer Eu and Tb nanoparticles were obtained by hot ion implantation into SiO{sub 2} matrix. Black-Right-Pointing-Pointer TEM results indicate the formation of nanoclusters in the hot as-implanted samples. Black-Right-Pointing-Pointer Samples annealed in N{sub 2} presented a broad PL band (from 370 up to 840 nm). Black-Right-Pointing-Pointer O

  3. Hydrothermal synthesis of highly luminescent blue-emitting ZnSe(S) quantum dots exhibiting low toxicity

    Energy Technology Data Exchange (ETDEWEB)

    Mirnajafizadeh, Fatemeh; Ramsey, Deborah; McAlpine, Shelli [School of Chemistry, University of New South Wales, Sydney, NSW 2052 (Australia); Wang, Fan; Reece, Peter [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Stride, John Arron, E-mail: j.stride@unsw.edu.au [School of Chemistry, University of New South Wales, Sydney, NSW 2052 (Australia); Bragg Institute, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia)

    2016-07-01

    Highly luminescent quantum dots (QDs) that emit in the visible spectrum are of interest to a number of imaging technologies, not least that of biological samples. One issue that hinders the application of luminescent markers in biology is the potential toxicity of the fluorophore. Here we show that hydrothermally synthesized ZnSe(S) QDs have low cytotoxicity to both human colorectal carcinoma cells (HCT-116) and human skin fibroblast cells (WS1). The QDs exhibited a high degree of crystallinity, with a strong blue photoluminescence at up to 29% quantum yield relative to 4′,6-diamidino-2-phenylindole (DAPI) without post-synthetic UV-irradiation. Confocal microscopy images obtained of HCT-116 cells after incubation with the QDs highlighted the stability of the particles in cell media. Cytotoxicity studies showed that both HCT-116 and WS1 cells retain 100% viability after treatment with the QDs at concentrations up to 0.5 g/L, which makes them of potential use in biological imaging applications. - Highlights: • Highly luminescent ZnSe(S) QDs were synthesized using a simple, one-step hydrothermal method. • The as-synthesized QDs were found to be nontoxic in the presence of biological cells. • The QDs were stable in biological media with identical emission profile to that in water.

  4. Highly stable CsPbBr3 quantum dots coated with alkyl phosphate for white light-emitting diodes.

    Science.gov (United States)

    Xuan, Tongtong; Yang, Xianfeng; Lou, Sunqi; Huang, Junjian; Liu, Yong; Yu, Jinbo; Li, Huili; Wong, Ka-Leung; Wang, Chengxin; Wang, Jing

    2017-10-19

    Inorganic halide perovskite quantum dots (QDs) suffer from problems related to poor water stability and poor thermal stability. Here we developed a simple strategy to synthesize alkyl phosphate (TDPA) coated CsPbBr 3 QDs by using 1-tetradecylphosphonic acid both as the ligand for the CsPbBr 3 QDs and as the precursor for the formation of alkyl phosphate. These QDs not only retain a high photoluminescence quantum yield (PLQY, 68%) and narrow band emission (FHWM ∼ 22 nm) but also exhibit high stability against water and heat. The relative PL intensity of the QDs was maintained at 75% or 59% after being dispersed in water for 5 h or heated to 375 K (100 °C), respectively. Finally, white light-emitting diodes (WLEDs) with a high luminous efficiency of 63 lm W -1 and a wide color gamut (122% of NTSC) were fabricated by using green-emitting CsPbBr 3 /TDPA QDs and red-emitting K 2 SiF 6 :Mn 4+ phosphors as color converters. The luminous efficiency of the WLEDs remained at 90% after working under a relative humidity (RH) of 60% for 15 h, thereby showing promise for use as backlight devices in LCDs.

  5. Investigation of the mechanism responsible for the photoluminescence enhancement with Li+ co-doping in highly thermally stable white-emitting Sr8ZnSc(PO4)7:Dy3+ phosphor

    International Nuclear Information System (INIS)

    Gou, Jing; Fan, Jingyan; Luo, Meng; Zuo, Shengnan

    2017-01-01

    The strategy of co-doping Li + was used with the aim of enhancing the emission intensities of Sr 8 ZnSc(PO 4 ) 7 under near ultraviolet excitation. The luminescence enhancement was related to the deep defects V O ¨ which were produced by the introduction of Li + ion. Furthermore, much deep V O ¨ were produced with the incorporation amount of Li + ion increasing. As the sensitizer, the produced deep V O ¨ can effectively tunnelling transfer energy to the nearby activator Dy 3+ resulting in the photoluminescence enhancement in SZSPO:1.5%Dy 3+ ,5%Li + . In addition, its yellow/blue emitting ratio and photoluminescent quantum yields both were improved under longer wavelength excitation. Furthermore, the excellent thermal stability of optimal SZSPO:1.5%Dy 3+ ,5%Li + excelled over commercial phosphor DS-200 below 225 °C. The electroluminescence properties of fabricated ABPD-WLED reach the optimum with V=10 V and I=800 mA (λ ex =365 nm) or 700 mA (λ ex =388 nm), then the bright white luminescence can be obviously observed. These photoluminescence, electroluminescence and thermal properties testified the potential application of Sr 8 ZnSc(PO 4 ) 7 :1.5%Dy 3+ ,5%Li + as a new-style warm-white emitting LEDs phosphor. - Graphical abstract: The mechanism of the luminescence enhancement is consider as that a little amount introduction of Li + ion can produce defects Li Zn ′ and oxygen vacancies V O ¨, and with the incorporation amount of Li + increasing, the more deep V O ¨ are produced. As sensitizer, the productive deeper V O ¨ can effectively tunneling transfer energy to nearby activator Dy 3+ inducing its photoluminescence enhancement.

  6. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

    International Nuclear Information System (INIS)

    Bietti, S; Sanguinetti, S; Somaschini, C; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

    2009-01-01

    We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

  7. Nontrivial transition of transmission in a highly open quantum point contact in the quantum Hall regime

    Science.gov (United States)

    Hong, Changki; Park, Jinhong; Chung, Yunchul; Choi, Hyungkook; Umansky, Vladimir

    2017-11-01

    Transmission through a quantum point contact (QPC) in the quantum Hall regime usually exhibits multiple resonances as a function of gate voltage and high nonlinearity in bias. Such behavior is unpredictable and changes sample by sample. Here, we report the observation of a sharp transition of the transmission through an open QPC at finite bias, which was observed consistently for all the tested QPCs. It is found that the bias dependence of the transition can be fitted to the Fermi-Dirac distribution function through universal scaling. The fitted temperature matches quite nicely to the electron temperature measured via shot-noise thermometry. While the origin of the transition is unclear, we propose a phenomenological model based on our experimental results that may help to understand such a sharp transition. Similar transitions are observed in the fractional quantum Hall regime, and it is found that the temperature of the system can be measured by rescaling the quasiparticle energy with the effective charge (e*=e /3 ). We believe that the observed phenomena can be exploited as a tool for measuring the electron temperature of the system and for studying the quasiparticle charges of the fractional quantum Hall states.

  8. Studies on highly luminescent AgInS{sub 2} and Ag–Zn–In–S quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Weidong, E-mail: xiangweidong001@126.com [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); College of Materials Science and Engineering, Tongji University, Shanghai 201804 (China); Xie, Cuiping; Wang, Jing; Zhong, Jiasong; Liang, Xiaojuan; Yang, Hailong; Luo, Le [College of Materials Science and Engineering, Tongji University, Shanghai 201804 (China); Chen, Zhaoping [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China)

    2014-03-05

    Highlights: • The quantum yield of the obtained ternary AgInS{sub 2} QDs was up to 62% with the emission peak of 642 nm under the excitation of 460 nm. • Colorful luminescent Ag–Zn–In–S QDs were obtained by adding Zn salts directly as well as Ag and In precursors. • The obtained highly luminescent quantum dots showed promising applications in the white light emitting diodes (W-LED). • The electroluminescence (EL) of AgInS{sub 2} QDs was observed in QD-LED device. -- Abstract: Silver indium sulfide (AIS) quantum dots (QDs) with different Ag/In molar ratios were synthesized via a hot-injection method. Intense photoluminescence (PL) originating from the donor–acceptor pair recombination were observed for all the samples and the emission peak blue-shifted from 739 to 632 nm, being similar to the behavior of the absorption onset as the Ag/In ratios decreased. The highest PL quantum yield (QY) of the obtained ternary AIS QDs was ca. 62% with an optimum ratio of Ag/In = 1/4. Compared with AIS QDs, when Zn ions were introduced, the absorption spectra of the obtained quaternary Ag–Zn–In–S QDs were blue-shifted, and their emission peaks moved to higher energies accordingly, showing a tunable emission from red to green by altering the band gap energy. In order to further study the electroluminescence (EL) as well as looking forward to the applications in the optoelectronic devices of the obtained highly luminescent nanoparticles, the colloidal AIS QDs were deposited as thin films to the sandwich-like structured QD-LED. The experimental results showed that the obtained EL device exhibited EL emission originated from QDs thin films by adjusting the turn on voltage, which is for the first time to realize EL of AIS QDs in such QD-LED.

  9. The influence of capping thioalkyl acid on the growth and photoluminescence efficiency of CdTe and CdSe quantum dots

    International Nuclear Information System (INIS)

    Aldeek, Fadi; Lambert, Jacques; Balan, Lavinia; Schneider, Raphael

    2008-01-01

    The influence of thioalkyl acid ligand was evaluated during aqueous synthesis at 100 deg. C and under hydrothermal conditions (150 deg. C) of CdTe and CdSe quantum dots (QDs). Experiments performed with 3-mercaptopropionic acid (MPA), 6-mercaptohexanoic acid (MHA) and 11-mercaptoundecanoic acid (MUA) demonstrated that the use of MHA and MUA allowed for the preparation of very small nanoparticles (0.6-2.5 nm) in carrying out the reaction under atmospheric pressure or in an autoclave and that the photophysical properties of QDs were dependent on the ligand and on the synthesis conditions. The influence of various experimental conditions, including the Te-to-Cd ratio, temperature, and precursor concentration, on the growth rate of CdTe or CdSe QDs has been systematically investigated. The fluorescence intensities of CdTe QDs capped with MPA, MHA, or MUA versus pH were also found to be related to the surface coverage of the nanoparticles.

  10. Quantum electrodynamics at high temperature. 2

    International Nuclear Information System (INIS)

    Alvarez-Estrada, R.F.

    1988-01-01

    The photon sector of QED in d = 3 spatial dimensions is analyzed at high temperature thereby generalizing nontrivially a previous study for d = 1. The imaginary time formalism and an improved renormalized perturbation theory which incorporates second order Debye screening are used. General results are presented for the leading high temperature contributions to all renormalized connected photon Green's functions for fixed external momenta (much smaller than the temperature) to all orders in the improved perturbation theory. Those leading contributions are ultraviolet finite, infrared convergent and gauge invariant, and display an interesting form of dimensional reduction at high temperature. A new path integral representations is given for the high temperature partition function with an external photon source, which is shown to generate all leading high temperature Green's functions mentioned above, and, so, it displays neatly the kind of dimensional reduction which makes QED to become simpler at high temperature. This limiting partition function corresponds to an imaginary time dependent electron positron field interacting with an electromagnetic field at zero imaginary time, and it depends on the renormalized electron mass and electric charge, the second order contribution to the usual renormalization constant Z 3 and a new mass term, which is associated to the photon field with vanishing Lorentz index. The new mass term corresponds to a finite number of diagrams in the high temperature improved perturbation theory and carriers ultraviolet divergences which are compensated for by other contributions (so that the leading high temperature Green's functions referred to above are ultraviolet finite). The dominant high temperature contributions to the renormalized thermodynamic potential to all perturbative orders: i) are given in terms of the above leading high-temperature contributions to the photon Green's functions (except for a few diagrams of low order in the

  11. High-fidelity quantum gates on quantum-dot-confined electron spins in low-Q optical microcavities

    Science.gov (United States)

    Li, Tao; Gao, Jian-Cun; Deng, Fu-Guo; Long, Gui-Lu

    2018-04-01

    We propose some high-fidelity quantum circuits for quantum computing on electron spins of quantum dots (QD) embedded in low-Q optical microcavities, including the two-qubit controlled-NOT gate and the multiple-target-qubit controlled-NOT gate. The fidelities of both quantum gates can, in principle, be robust to imperfections involved in a practical input-output process of a single photon by converting the infidelity into a heralded error. Furthermore, the influence of two different decay channels is detailed. By decreasing the quality factor of the present microcavity, we can largely increase the efficiencies of these quantum gates while their high fidelities remain unaffected. This proposal also has another advantage regarding its experimental feasibility, in that both quantum gates can work faithfully even when the QD-cavity systems are non-identical, which is of particular importance in current semiconductor QD technology.

  12. Luminescent passive-oxidized silicon quantum dots as biological staining labels and their cytotoxicity effects at high concentration

    International Nuclear Information System (INIS)

    Fujioka, Kouki; Manabe, Noriyoshi; Hanada, Sanshiro; Hoshino, Akiyoshi; Yamamoto, Kenji; Hiruoka, Masaki; Sato, Keisuke; Hirakuri, Kenji; Miyasaka, Ryosuke; Tilley, Richard D; Manome, Yoshinobu

    2008-01-01

    Semiconductor quantum dots (QDs) hold some advantages over conventional organic fluorescent dyes. Due to these advantages, they are becoming increasingly popular in the field of bioimaging. However, recent work suggests that cadmium based QDs affect cellular activity. As a substitute for cadmium based QDs, we have developed photoluminescent stable silicon quantum dots (Si-QDs) with a passive-oxidation technique. Si-QDs (size: 6.5 ± 1.5 nm) emit green light, and they have been used as biological labels for living cell imaging. In order to determine the minimum concentration for cytotoxicity, we investigated the response of HeLa cells. We have shown that the toxicity of Si-QDs was not observed at 112 μg ml -1 and that Si-QDs were less toxic than CdSe-QDs at high concentration in mitochondrial assays and with lactate dehydrogenase (LDH) assays. Especially under UV exposure, Si-QDs were more than ten times safer than CdSe-QDs. We suggest that one mechanism for the cytotoxicity is that Si-QDs can generate oxygen radicals and these radicals are associated with membrane damages. This work has demonstrated the suitability of Si-QDs for bioimaging in lower concentration, and their cytotoxicity and one toxicity mechanism at high concentration

  13. Aqueous synthesis of highly luminescent glutathione-capped Mn{sup 2+}-doped ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Kolmykov, Oleksii [Université de Lorraine, Laboratoire Réactions et Génie des Procédés (LRGP), UMR 7274, CNRS, 1 rue Grandville, BP 20451, 54001 Nancy Cedex (France); Coulon, Joël [Université de Lorraine, Laboratoire de Chimie Physique et Microbiologie pour l' Environnement (LCPME), UMR 7564, CNRS, Faculté de Pharmacie, 5 rue Albert Lebrun, 54000 Nancy (France); Lalevée, Jacques [Institut de Science des Matériaux de Mulhouse (IS2M), UMR 7361, CNRS, 15 rue Jean Starcky, 68093 Mulhouse (France); Alem, Halima; Medjahdi, Ghouti [Université de Lorraine, Institut Jean Lamour (IJL), UMR 7198, CNRS, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Schneider, Raphaël, E-mail: raphael.schneider@univ-lorraine.fr [Université de Lorraine, Laboratoire Réactions et Génie des Procédés (LRGP), UMR 7274, CNRS, 1 rue Grandville, BP 20451, 54001 Nancy Cedex (France)

    2014-11-01

    In this paper, an aqueous-based route has been developed to prepare highly luminescent glutathione (GSH)-capped Mn-doped ZnS quantum dots (QDs). The dots obtained have an average diameter of 4.3 nm and exhibit the Mn{sup 2+}-related orange luminescence with very low surface defect density. The highest photoluminescence was observed for a Mn{sup 2+} to Zn{sup 2+} molar ratio of 3%. Consecutive overcoating of the Mn:ZnS@GSH QDs by a ZnS shell was done, and the core/shell structured QDs exhibit a PL quantum yield of 23%. Transmission electron microscopy, X-ray powder diffraction, electron spin resonance, X-ray photoelectron spectroscopy, UV–visible spectroscopy and spectrofluorometry have been used to characterize the crystal structure, the doping status, and the optical properties of the doped-QDs. Our systematic investigation shows that Mn:ZnS/ZnS@GSH QDs are highly promising fluorescent labels in biological applications.

  14. High mobility and quantum well transistors design and TCAD simulation

    CERN Document Server

    Hellings, Geert

    2013-01-01

    For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

  15. Formation Mechanism of Carbogenic Nanoparticles with Dual Photoluminescence Emission

    KAUST Repository

    Krysmann, Marta J.

    2012-01-18

    We present a systematic investigation of the formation mechanism of carbogenic nanoparticles (CNPs), otherwise referred to as C-dots, by following the pyrolysis of citric acid (CA)-ethanolamine (EA) precursor at different temperatures. Pyrolysis at 180 °C leads to a CNP molecular precursor with a strongly intense photoluminescence (PL) spectrum and high quantum yield formed by dehydration of CA-EA. At higher temperatures (230 °C) a carbogenic core starts forming and the PL is due to the presence of both molecular fluorophores and the carbogenic core. CNPs that exhibit mostly or exclusively PL arising from carbogenic cores are obtained at even higher temperatures (300 and 400 °C, respectively). Since the molecular fluorophores predominate at low pyrolysis temperatures while the carbogenic core starts forming at higher temperatures, the PL behavior of CNPs strongly depends on the conditions used for their synthesis. © 2011 American Chemical Society.

  16. High-density limit of quantum chromodynamics

    International Nuclear Information System (INIS)

    Alvarez, E.

    1983-01-01

    By means of a formal expansion of the partition function presumably valid at large baryon densities, the propagator of the quarks is expressed in terms of the gluon propagator. This result is interpreted as implying that correlations between quarks and gluons are unimportant at high enough density, so that a kind of mean-field approximation gives a very accurate description of the physical system

  17. Ultra-high bandwidth quantum secured data transmission

    Science.gov (United States)

    Dynes, James F.; Tam, Winci W.-S.; Plews, Alan; Fröhlich, Bernd; Sharpe, Andrew W.; Lucamarini, Marco; Yuan, Zhiliang; Radig, Christian; Straw, Andrew; Edwards, Tim; Shields, Andrew J.

    2016-10-01

    Quantum key distribution (QKD) provides an attractive means for securing communications in optical fibre networks. However, deployment of the technology has been hampered by the frequent need for dedicated dark fibres to segregate the very weak quantum signals from conventional traffic. Up until now the coexistence of QKD with data has been limited to bandwidths that are orders of magnitude below those commonly employed in fibre optic communication networks. Using an optimised wavelength divisional multiplexing scheme, we transport QKD and the prevalent 100 Gb/s data format in the forward direction over the same fibre for the first time. We show a full quantum encryption system operating with a bandwidth of 200 Gb/s over a 100 km fibre. Exploring the ultimate limits of the technology by experimental measurements of the Raman noise, we demonstrate it is feasible to combine QKD with 10 Tb/s of data over a 50 km link. These results suggest it will be possible to integrate QKD and other quantum photonic technologies into high bandwidth data communication infrastructures, thereby allowing their widespread deployment.

  18. Quantum interference in laser spectroscopy of highly charged lithiumlike ions

    Science.gov (United States)

    Amaro, Pedro; Loureiro, Ulisses; Safari, Laleh; Fratini, Filippo; Indelicato, Paul; Stöhlker, Thomas; Santos, José Paulo

    2018-02-01

    We investigate the quantum interference induced shifts between energetically close states in highly charged ions, with the energy structure being observed by laser spectroscopy. In this work, we focus on hyperfine states of lithiumlike heavy-Z isotopes and quantify how much quantum interference changes the observed transition frequencies. The process of photon excitation and subsequent photon decay for the transition 2 s →2 p →2 s is implemented with fully relativistic and full-multipole frameworks, which are relevant for such relativistic atomic systems. We consider the isotopes 79+207Pb and 80+209Bi due to experimental interest, as well as other examples of isotopes with lower Z , namely 56+141Pr and 64+165Ho. We conclude that quantum interference can induce shifts up to 11% of the linewidth in the measurable resonances of the considered isotopes, if interference between resonances is neglected. The inclusion of relativity decreases the cross section by 35%, mainly due to the complete retardation form of the electric dipole multipole. However, the contribution of the next higher multipoles (e.g., magnetic quadrupole) to the cross section is negligible. This makes the contribution of relativity and higher-order multipoles to the quantum interference induced shifts a minor effect, even for heavy-Z elements.

  19. High Quantum Efficiency OLED Lighting Systems

    Energy Technology Data Exchange (ETDEWEB)

    Shiang, Joseph [General Electric (GE) Global Research, Fairfield, CT (United States)

    2011-09-30

    The overall goal of the program was to apply improvements in light outcoupling technology to a practical large area plastic luminaire, and thus enable the product vision of an extremely thin form factor high efficiency large area light source. The target substrate was plastic and the baseline device was operating at 35 LPW at the start of the program. The target LPW of the program was a >2x improvement in the LPW efficacy and the overall amount of light to be delivered was relatively high 900 lumens. Despite the extremely difficult challenges associated with scaling up a wet solution process on plastic substrates, the program was able to make substantial progress. A small molecule wet solution process was successfully implemented on plastic substrates with almost no loss in efficiency in transitioning from the laboratory scale glass to large area plastic substrates. By transitioning to a small molecule based process, the LPW entitlement increased from 35 LPW to 60 LPW. A further 10% improvement in outcoupling efficiency was demonstrated via the use of a highly reflecting cathode, which reduced absorptive loss in the OLED device. The calculated potential improvement in some cases is even larger, ~30%, and thus there is considerable room for optimism in improving the net light coupling efficacy, provided absorptive loss mechanisms are eliminated. Further improvements are possible if scattering schemes such as the silver nanowire based hard coat structure are fully developed. The wet coating processes were successfully scaled to large area plastic substrate and resulted in the construction of a 900 lumens luminaire device.

  20. Optical studies of 2DEGs in Zinc Selenide quantum wells in high magnetic fields

    International Nuclear Information System (INIS)

    Ossau, Wolfgang J.; Astakhov, G.V.; Yakovlev, D.R.; Crooker, Scott A.; Waag, A.

    2002-01-01

    Optical properties of a two-dimensional electron gas in ZnSe/(Zn,Be,Mg)Se quantum well structures have been examined by means of photoluminescence and reflectivity techniques in external magnetic fields up to 50 T. For these structures the Fermi energy of the two-dimensional electron gas is falling in the range between the trion binding energy and the exciton binding energy, which keeps the dominating role of Coulombic interaction between electrons and photoexcited holes. Characteristic peculiarities of optical spectra are discussed.

  1. Optical studies of 2DEGs in ZnSe quantum wells in high magnetic fields.

    Energy Technology Data Exchange (ETDEWEB)

    Ossau, Wolfgang J.; Astakhov, G. V.; Yakovlev, D. R.; Crooker, S. A. (Scott A.); Waag, A.

    2002-01-01

    Optical properties of a two-dimensional electron gas in ZnSe/(Zn,Be,Mg)Se quantum well structures have been examined by means of photoluminescence and reflectivity techniques in external magnetic fields up to 50 T. For these structures the Fermi energy of the two-dimensional electron gas is falling in the range between the trion binding energy and the exciton binding energy, which keeps the dominating role of Coulombic interaction between electrons and photoexcited holes. Characteristic peculiarities of optical spectra are discussed.

  2. High luminescent L-cysteine capped CdTe quantum dots prepared at different reaction times

    Science.gov (United States)

    Kiprotich, Sharon; Onani, Martin O.; Dejene, Francis B.

    2018-04-01

    This paper reports a facile synthesis route of high luminescent L-cysteine capped CdTe quantum dots (QDs). The effect of reaction time on the growth mechanism, optical and physical properties of the CdTe QDs was investigated in order to find the suitability of them towards optical and medical applications. The representative high-resolution transmission microscopy (HRTEM) analysis showed that the as-obtained CdTe QDs appeared as spherical particles with excellent monodispersity. The images exhibited clear lattice fringes which are indicative of good crystallinity. The X-ray diffraction (XRD) pattern displayed polycrystalline nature of the QDs which correspond well to zinc blende phase of bulk CdTe. The crystallite sizes calculated from the Scherrer equation were less than 10 nm for different reaction times which were in close agreement with the values estimated from HRTEM. An increase in reaction time improved crystallinity of the sample as explained by highest peak intensity of the XRD supported by the photoluminescence emission spectra which showed high intensity at a longer growth time. It was observed that for prolonged growth time the emission bands were red shifted from about 517-557 nm for 5-180 min of reaction time due to increase in particle sizes. Ultraviolet and visible analysis displayed well-resolved absorption bands which were red shifted upon an increase in reaction time. There was an inverse relation between the band gap and reaction time. Optical band gap decreases from 3.98 to 2.59 eV with the increase in reaction time from 15 to 180 min.

  3. Air-Stable Surface-Passivated Perovskite Quantum Dots for Ultra-Robust, Single- and Two-Photon-Induced Amplified Spontaneous Emission

    KAUST Repository

    Pan, Jun; Sarmah, Smritakshi P.; Banavoth, Murali; Dursun, Ibrahim; Peng, Wei; Parida, Manas R.; Liu, Jiakai; Sinatra, Lutfan; AlYami, Noktan; Zhao, Chao; Alarousu, Erkki; Ng, Tien Khee; Ooi, Boon S.; Bakr, Osman; Mohammed, Omar F.

    2015-01-01

    We demonstrate ultra-air- and photostable CsPbBr3 quantum dots (QDs) by using an inorganic–organic hybrid ion pair as the capping ligand. This passivation approach to perovskite QDs yields high photoluminescence quantum yield with unprecedented

  4. Facile synthetic method for pristine graphene quantum dots and graphene oxide quantum dots: origin of blue and green luminescence.

    Science.gov (United States)

    Liu, Fei; Jang, Min-Ho; Ha, Hyun Dong; Kim, Je-Hyung; Cho, Yong-Hoon; Seo, Tae Seok

    2013-07-19

    Pristine graphene quantum dots and graphene oxide quantum dots are synthesized by chemical exfoliation from the graphite nanoparticles with high uniformity in terms of shape (circle), size (less than 4 nm), and thickness (monolayer). The origin of the blue and green photoluminescence of GQDs and GOQDs is attributed to intrinsic and extrinsic energy states, respectively. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-03-01

    The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

  6. Visible photoluminescence from hydrogenated silicon particles suspended in a silane plasma

    International Nuclear Information System (INIS)

    Courteille, C.; Dorier, J.L.; Dutta, J.; Hollenstein, C.; Howling, A.A.; Stoto, T.

    1994-09-01

    Visible photoluminescence at room temperature has been observed in amorphous hydrogenated silicon particulates during their formation in a silane radio-frequency plasma. Oxygen injection along with mass spectrometry measurements demonstrate that oxygen has no influence on the photoluminescence. The appearance of visible photoluminescence coincides with a particle agglomeration phase as shown by laser light scattering experiments, and electron microscopy shows silicon nanocrystals within these particulates. These observations of visible photoluminescence are consistent with the model of quantum confinement in the silicon nanocrystals. (author) 5 figs., 45 refs

  7. High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

    KAUST Repository

    Muhammed, Mufasila; Alwadai, Norah Mohammed Mosfer; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S.

    2017-01-01

    We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

  8. High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

    KAUST Repository

    Muhammed, Mufasila

    2017-09-11

    We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

  9. Progress in quantum electrodynamics theory of highly charged ions

    OpenAIRE

    Volotka, A. V.; Glazov, D. A.; Plunien, G.; Shabaev, V. M.

    2013-01-01

    Recent progress in quantum electrodynamics (QED) calculations of highly charged ions is reviewed. The theoretical predictions for the binding energies, the hyperfine splittings, and the g factors are presented and compared with available experimental data. Special attention is paid to tests of bound-state QED at strong field regime. Future prospects for tests of QED at the strongest electric and magnetic fields as well as for determination of the fine structure constant and the nuclear magnet...

  10. High-field spin dynamics of antiferromagnetic quantum spin chains

    DEFF Research Database (Denmark)

    Enderle, M.; Regnault, L.P.; Broholm, C.

    2000-01-01

    present recent work on the high-field spin dynamics of the S = I antiferromagnetic Heisenberg chains NENP (Haldane ground state) and CsNiCl3 (quasi-1D HAF close to the quantum critical point), the uniform S = 1/2 chain CTS, and the spin-Peierls system CuGeO3. (C) 2000 Elsevier Science B,V. All rights...

  11. Quantum Monte Carlo simulations for high-Tc superconductors

    International Nuclear Information System (INIS)

    Muramatsu, A.; Dopf, G.; Wagner, J.; Dieterich, P.; Hanke, W.

    1992-01-01

    Quantum Monte Carlo simulations for a multi-band model of high-Tc superconductors are reviewed with special emphasis on the comparison of different observabels with experiments. It is shown that a give parameter set of the three-band Hubbard model leads to a consistent description of normal-state propteries as well as pairing correlation function for the copper-oxide superconductors as a function of doping and temperature. (orig.)

  12. Quantum-path control in high-order harmonic generation at high photon energies

    International Nuclear Information System (INIS)

    Zhang Xiaoshi; Lytle, Amy L; Cohen, Oren; Murnane, Margaret M; Kapteyn, Henry C

    2008-01-01

    We show through experiment and calculations how all-optical quasi-phase-matching of high-order harmonic generation can be used to selectively enhance emission from distinct quantum trajectories at high photon energies. Electrons rescattered in a strong field can traverse short and long quantum trajectories that exhibit differing coherence lengths as a result of variations in intensity of the driving laser along the direction of propagation. By varying the separation of the pulses in a counterpropagating pulse train, we selectively enhance either the long or the short quantum trajectory, and observe distinct spectral signatures in each case. This demonstrates a new type of coupling between the coherence of high-order harmonic beams and the attosecond time-scale quantum dynamics inherent in the process

  13. Controllable synthesis of dual emissive Ag:InP/ZnS quantum dots with high fluorescence quantum yield

    Science.gov (United States)

    Yang, Wu; He, Guoxing; Mei, Shiliang; Zhu, Jiatao; Zhang, Wanlu; Chen, Qiuhang; Zhang, Guilin; Guo, Ruiqian

    2017-11-01

    Dual emissive Cd-free quantum dots (QDs) are in great demand for various applications. However, their synthesis has been faced with challenges. Here, we demonstrate the dual emissive Ag:InP/ZnS core/shell QDs with the excellent photoluminescence quantum yield (PL QY) up to 75% and their PL dependence on the reaction temperature, reaction time, the different ZnX2 (X = I, Cl, and Br) precursors, the ratio of In/Zn and the Ag dopant concentration. The as-prepared Ag:InP/ZnS QDs exhibit dual emission with one peak position of about 492 nm owing to the intrinsic emission, and the other peak position of about 575 nm resulting from Ag-doped emission. These dual emissive QDs are integrated with the commercial GaN-based blue LEDs, and the simulation results show that the Ag:InP/ZnS QDs-based white LEDs could realize bright natural white-lights with the luminous efficacy (LE) of 94.2-98.4 lm/W, the color rendering index (CRI) of 82-83 and the color quality scale (CQS) of 82-83 at different correlated color temperatures (CCT). This unique combination of the above properties makes this new class of dual emissive QDs attractive for white LED applications.

  14. Propagation effect on photoluminescence of spin-aligned high-density exciton magnetic polarons in Cd{sub 0.8}Mn{sub 0.2}Te

    Energy Technology Data Exchange (ETDEWEB)

    Nagata, M.; Hirase, T.; Miyajima, K., E-mail: miyajima@rs.tus.ac.jp

    2017-04-15

    Characteristics of photoluminescence (PL) originating from high-density exciton magnetic polarons (HD-EMPs) for Cd{sub 0.8}Mn{sub 0.2}Te were investigated. The PL appeared only under selective excitation of the localized excitons, and the intensity increased superlinearly with the excitation density. Directivity of the PL was revealed. Therefore, it is concluded that the superlinear increase in the PL intensity resulted from a light amplification process owing to the stimulated emission. In addition, the existence of birefringence that originates from a uniaxial gradation of the Mn ion concentrations was revealed. The degree of circular polarization (DOCP) of the PL is important to obtain the spin alignment state of the HD-EMPs. The initial DOCPs of the PL were examined by removing a variation of the polarization during propagation inside the sample. As a result, it was found that the initial DOCPs of the PL were almost constant for the photon energy. The obtained initial DOCPs exhibited different values for right- and left-circularly polarized excitations, which resulted from different mechanisms of the spin alignment of the HD-EMPs.

  15. Origin of fine oscillations in the photoluminescence spectrum of 2-dimensional electron gas formed in AlGaN/GaN high electron mobility transistor structures

    Energy Technology Data Exchange (ETDEWEB)

    Jana, Dipankar, E-mail: dip2602@gmail.com; Porwal, S.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013, Madhya Pradesh (India); Jain, Anubha [Solid State Physics Laboratory, Lucknow Road, New Delhi 110054 (India)

    2015-10-28

    An unambiguous identification of the fine oscillations observed in the low temperature photoluminescence (PL) spectra of AlGaN/GaN based high electron mobility transistor (HEMT) structures is carried out. In literature, such oscillations have been erroneously identified as the sub-levels of 2-dimensional electron gas (2DEG) formed at AlGaN/GaN heterointerface. Here, the origin of these oscillations is probed by performing the angle dependent PL and reflectivity measurements under identical conditions. Contrary to the reports available in literature, we find that the fine oscillations are not related to 2DEG sub-levels. The optical characteristics of these oscillations are mainly governed by an interference phenomenon. In particular, peculiar temperature dependent redshift and excitation intensity dependent blueshift, which have been interpreted as the characteristics of 2DEG sub-levels in HEMT structures by other researchers, are understood by invoking the wavelength and temperature dependence of the refractive index of GaN within the framework of interference phenomenon. The results of other researchers are also consistently explained by considering the fine oscillatory features as the interference oscillations.

  16. Quantum Electrodynamics with Semiconductor Quantum Dots Coupled to Anderson‐localized Random Cavities

    DEFF Research Database (Denmark)

    Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

    2011-01-01

    of the spontaneous emission decay rate by up to a factor 15 and an efficiency of channeling single photons into Anderson-localized modes reaching values as high as 94%. These results prove that disordered photonic media provide an efficient platform for quantum electrodynamics, offering a novel route to quantum......We demonstrate that the spontaneous emission decay rate of semiconductor quantum dots can be strongly modified by the coupling to disorder-induced Anderson-localized photonic modes. We experimentally measure, by means of time-resolved photoluminescence spectroscopy, the enhancement...

  17. High-electric-field quantum transport theory for semiconductor superlattices

    International Nuclear Information System (INIS)

    Nguyen Hong Shon; Nazareno, H.N.

    1995-12-01

    Based on the Baym-Kadanoff-Keldysh nonequilibrium Green's functions technique, a quantum transport theory for semiconductor superlattices under high-electric field is developed. This theory is capable of considering collisional broadening, intra-collisional field effects and band transport and hopping regimes simultaneously. Numerical calculations for narrow-miniband superlattices in high electric field, when the hopping regime dominates are in reasonable agreement with experimental results and show a significant deviation from the Boltzmann theory. A semiphenomenological formula for current density in hopping regime is proposed. (author). 60 refs, 4 figs

  18. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Science.gov (United States)

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  19. Quantum

    CERN Document Server

    Al-Khalili, Jim

    2003-01-01

    In this lively look at quantum science, a physicist takes you on an entertaining and enlightening journey through the basics of subatomic physics. Along the way, he examines the paradox of quantum mechanics--beautifully mathematical in theory but confoundingly unpredictable in the real world. Marvel at the Dual Slit experiment as a tiny atom passes through two separate openings at the same time. Ponder the peculiar communication of quantum particles, which can remain in touch no matter how far apart. Join the genius jewel thief as he carries out a quantum measurement on a diamond without ever touching the object in question. Baffle yourself with the bizzareness of quantum tunneling, the equivalent of traveling partway up a hill, only to disappear then reappear traveling down the opposite side. With its clean, colorful layout and conversational tone, this text will hook you into the conundrum that is quantum mechanics.

  20. Integration of highly probabilistic sources into optical quantum architectures: perpetual quantum computation

    International Nuclear Information System (INIS)

    Devitt, Simon J; Stephens, Ashley M; Munro, William J; Nemoto, Kae

    2011-01-01

    In this paper, we introduce a design for an optical topological cluster state computer constructed exclusively from a single quantum component. Unlike previous efforts we eliminate the need for on demand, high fidelity photon sources and detectors and replace them with the same device utilized to create photon/photon entanglement. This introduces highly probabilistic elements into the optical architecture while maintaining complete specificity of the structure and operation for a large-scale computer. Photons in this system are continually recycled back into the preparation network, allowing for an arbitrarily deep three-dimensional cluster to be prepared using a comparatively small number of photonic qubits and consequently the elimination of high-frequency, deterministic photon sources.

  1. Highly aqueous soluble CaF2:Ce/Tb nanocrystals: effect of surface functionalization on structural, optical band gap, and photoluminescence properties.

    Science.gov (United States)

    Ansari, Anees A; Parchur, Abdul K; Kumar, Brijesh; Rai, S B

    2016-12-01

    /Tb nanoparticles via metal complex decomposition rout shows high dispersibility in aqueous solvents with enhanced photoluminescence. The epitaxial growth of inert CaF 2 shell and further amorphous silica, respectively, enhanced their optical and luminescence properties, which is highly usable for luminescent biolabeling, and optical bioprobe etc.

  2. High extinction ratio integrated optical modulator for quantum telecommunication systems

    Science.gov (United States)

    Tronev, A.; Parfenov, M.; Agruzov, P.; Ilichev, I.; Shamray, A.

    2018-01-01

    A method for increasing the extinction ratio of integrated optical Mach-Zehnder modulators based on LiNbO3 via the photorefractive effect is proposed. The influence of the photorefractive effect on the X- and Y-splitters of intensity modulators is experimentally studied. An increase in the modulator extinction ratio by 17 dB (from 30 to 47 dB) is obtained. It is shown that fabricated modulators with a high extinction ratio are important for quantum key distribution systems.

  3. High-dimensional quantum channel estimation using classical light

    CSIR Research Space (South Africa)

    Mabena, Chemist M

    2017-11-01

    Full Text Available stream_source_info Mabena_20007_2017.pdf.txt stream_content_type text/plain stream_size 960 Content-Encoding UTF-8 stream_name Mabena_20007_2017.pdf.txt Content-Type text/plain; charset=UTF-8 PHYSICAL REVIEW A 96, 053860... (2017) High-dimensional quantum channel estimation using classical light Chemist M. Mabena CSIR National Laser Centre, P.O. Box 395, Pretoria 0001, South Africa and School of Physics, University of the Witwatersrand, Johannesburg 2000, South...

  4. Quantum critical point in high-temperature superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shaginyan, V.R. [Petersburg Nuclear Physics Institute, RAS, Gatchina 188300 (Russian Federation); Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel)], E-mail: vrshag@thd.pnpi.spb.ru; Amusia, M.Ya. [Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); Popov, K.G. [Komi Science Center, Ural Division, RAS, Syktyvkar 167982 (Russian Federation); Stephanovich, V.A. [Opole University, Institute of Mathematics and Informatics, Opole 45-052 (Poland)], E-mail: stef@math.uni.opole.pl

    2009-02-02

    Recently, in high-T{sub c} superconductors (HTSC), exciting measurements have been performed revealing their physics in superconducting and pseudogap states and in normal one induced by the application of magnetic field, when the transition from non-Fermi liquid to Landau-Fermi liquid behavior occurs. We employ a theory, based on fermion condensation quantum phase transition which is able to explain facts obtained in the measurements. We also show, that in spite of very different microscopic nature of HTSC, heavy-fermion metals and 2D {sup 3}He, the physical properties of these three classes of substances are similar to each other.

  5. Modulation of the photoluminescence in carbon dots through surface modification: from mechanism to white light-emitting diodes

    Science.gov (United States)

    Zhu, Jinyang; Shao, He; Bai, Xue; Zhai, Yue; Zhu, Yongsheng; Chen, Xu; Pan, Gencai; Dong, Biao; Xu, Lin; Zhang, Hanzhuang; Song, Hongwei

    2018-06-01

    Carbon dots (CDs) have emerged as a new type of fluorescent material because of their unique optical advantages, such as high photoluminescence quantum yields (QYs), excellent photo-stability, excitation-dependent emissions, and low toxicity. However, the photoluminescence mechanism for CDs remains unclear, which limits their further practical application. Here, CDs were synthesized via a solvothermal route from citric acid and urea. Through the oxidation and reduction treatment of pristine CDs, the origin of the photoluminescence and the involved mechanism were revealed. We found that the blue/green/red emissions originated from three diverse emitting states, i.e. the intrinsic state, and C=O- and C=N-related surface states, respectively. Based on the as-prepared CDs, a pH sensor depending on the radiometric luminescence detection was developed. Furthermore, we constructed CD/PVP (PVP, polyvinylpyrrolidone) composite films, which exhibited white light emission with photoluminescence QYs of 15.3%. The white light emission with different correlated color temperatures (CCTs), from 4807 K to 3319 K, was obtained by simply changing the amount of PVP solution. Benefiting from the white light-emitting solid-state films, single-component white light-emitting diodes were fabricated with an average color rendering index value (Ra) of 80.0, luminous efficiency of 10.2 lm W‑1, and good working stability, thus indicating a promising potential for practical lighting applications.

  6. Long quantum channels for high-quality entanglement transfer

    International Nuclear Information System (INIS)

    Banchi, L; Apollaro, T J G; Cuccoli, A; Verrucchi, P; Vaia, R

    2011-01-01

    High-quality quantum-state and entanglement transfer can be achieved in an unmodulated spin bus operating in the ballistic regime, which occurs when the endpoint qubits A and B are nonperturbatively coupled to the chain by a suitable exchange interaction j 0 . Indeed, the transition amplitude characterizing the transfer quality exhibits a maximum for a finite optimal value j opt 0 (N), where N is the channel length. We show that j opt 0 (N) scales as N -1/6 for large N and that it ensures a high-quality entanglement transfer even in the limit of arbitrarily long channels, almost independently of the channel initialization. For instance, for any chain length the average quantum-state transmission fidelity exceeds 90% and decreases very little in a broad neighbourhood of j opt 0 (N). We emphasize that, taking the reverse point of view, should j 0 be experimentally constrained, high-quality transfer can still be obtained by adjusting the channel length to its optimal value. (paper)

  7. Quantum Transport Simulation of High-Power 4.6-μm Quantum Cascade Lasers

    Directory of Open Access Journals (Sweden)

    Olafur Jonasson

    2016-06-01

    Full Text Available We present a quantum transport simulation of a 4.6- μ m quantum cascade laser (QCL operating at high power near room temperature. The simulation is based on a rigorous density-matrix-based formalism, in which the evolution of the single-electron density matrix follows a Markovian master equation in the presence of applied electric field and relevant scattering mechanisms. We show that it is important to allow for both position-dependent effective mass and for effective lowering of very thin barriers in order to obtain the band structure and the current-field characteristics comparable to experiment. Our calculations agree well with experiments over a wide range of temperatures. We predict a room-temperature threshold field of 62 . 5 kV/cm and a characteristic temperature for threshold-current-density variation of T 0 = 199 K . We also calculate electronic in-plane distributions, which are far from thermal, and show that subband electron temperatures can be hundreds to thousands of degrees higher than the heat sink. Finally, we emphasize the role of coherent tunneling current by looking at the size of coherences, the off-diagonal elements of the density matrix. At the design lasing field, efficient injection manifests itself in a large injector/upper lasing level coherence, which underscores the insufficiency of semiclassical techniques to address injection in QCLs.

  8. High resolution kinetic beam schemes in generalized coordinates for ideal quantum gas dynamics

    International Nuclear Information System (INIS)

    Shi, Yu-Hsin; Huang, J.C.; Yang, J.Y.

    2007-01-01

    A class of high resolution kinetic beam schemes in multiple space dimensions in general coordinates system for the ideal quantum gas is presented for the computation of quantum gas dynamical flows. The kinetic Boltzmann equation approach is adopted and the local equilibrium quantum statistics distribution is assumed. High-order accurate methods using essentially non-oscillatory interpolation concept are constructed. Computations of shock wave diffraction by a circular cylinder in an ideal quantum gas are conducted to illustrate the present method. The present method provides a viable means to explore various practical ideal quantum gas flows

  9. Photoluminescent carbogenic nanoparticles directly derived from crude biomass

    KAUST Repository

    Krysmann, Marta J.

    2012-01-01

    We present an environmentally benign, energy efficient and readily scalable approach to synthesize photoluminescent carbogenic nanoparticles directly from soft tissue biomass. Our approach relies on the pyrolytic decomposition of grass that gives rise to the formation of well-defined nanoparticles. The carbogenic nanoparticles can be readily surface modified, generating a series of highly selective photoluminescent materials that exhibit remarkable stability upon prolonged exposure to aggressive, high-temperature, high-salinity environment. © 2012 The Royal Society of Chemistry.

  10. High-rate measurement-device-independent quantum cryptography

    DEFF Research Database (Denmark)

    Pirandola, Stefano; Ottaviani, Carlo; Spedalieri, Gaetana

    2015-01-01

    Quantum cryptography achieves a formidable task - the remote distribution of secret keys by exploiting the fundamental laws of physics. Quantum cryptography is now headed towards solving the practical problem of constructing scalable and secure quantum networks. A significant step in this direction...

  11. Quantum vortex motion in high-Tc superconductors

    International Nuclear Information System (INIS)

    Garcia, A.; Zhang, X.X.; Tejada, J.

    1996-01-01

    Magnetic relaxation experiments at low temperatures were performed in different zero-field-cooled (ZFC) and field-cooled (FC) high-T c superconductors (HTSCs): TlBaCaCuO (2212 and 2223 phases, polycrystalline and thin-film samples), (Hg,Tl)BaCaCuO (1223 phase, polycrystalline material), and (Bi,Pb)SrCaCuO (2212 phase, single crystal). For each system and in the whole temperature range investigated, the relaxation curves obtained after both cooling processes are linear with the logarithm of time. The temperature dependence of the relaxation rate normalized to the first magnetization value, R=parallel d(M/M 0 )/dln(t)parallel, follows a trend which is common to all systems: R decreases linearly with decreasing temperature down to a value, which is called the crossover temperature, below which it levels off to a T-independent plateau. This behavior gives evidence of a transition in the mechanism responsible for the relaxation process at low temperatures, from thermally activated (linear dependence on T) to quantum vortex motion (T-independent regime). The experimental values for the crossover temperatures and normalized relaxation rates compare fairly well to numerical estimates in the framework of the theories of quantum vortex motion in layered HTSCs. Finally, the transition from one regime into another was studied in two samples of the TlBaCaCuO, 2223 phase, system in order to investigate the influence of dissipation on the quantum process. A clear conclusion on this point could not be drawn from these kinds of measurements. copyright 1996 American Institute of Physics

  12. Macroscopic quantum electrodynamics of high-Q cavities

    International Nuclear Information System (INIS)

    Khanbekyan, Mikayel

    2009-01-01

    In this thesis macroscopic quantum electrodynamics in linear media was applied in order to develop an universally valid quantum theory for the description of the interaction of the electromagnetic field with atomic sources in high-Q cavities. In this theory a complete description of the characteristics of the emitted radiation is given. The theory allows to show the limits of the applicability of the usually applied theory. In order to establish an as possible generally valid theory first the atom-field interaction was studied in the framework of macroscopic quantum electrodynamics in dispersive and absorptive media. In order to describe the electromagnetic field from Maxwell's equations was started, whereby the noise-current densities, which are connected with the absorption of the medium, were included. The solution of these equations expresses the electromagnetic field variables by the noise-current densities by means of Green's tensor of the macroscopic Maxwell equations. The explicit quantization is performed by means of the noise-current densities, whereby a diagonal Hamiltonian is introduced, which then guarantees the time development according to Maxwell's equation and the fulfillment of the fundamental simultaneous commutation relations of the field variables. In the case of the interaction of the medium-supported field with atoms the Hamiltonian must be extended by atom-field interactions energies, whereby the canonical coupling schemes of the minimal or multipolar coupling can be used. The dieelectric properties of the material bodies as well as their shape are coded in the Green tensor of the macroscopic Maxwell equations. As preparing step first the Green tensor was specified in order to derive three-dimensional input-output relations for the electromagnetic field operators on a plane multilayer structure. Such a general dewscription of the electromagnetic field allows the inclusion both of dispersion and absorption of the media and the possible

  13. High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate.

    Science.gov (United States)

    Muhammed, Mufasila M; Alwadai, Norah; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S

    2017-10-04

    We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga 2 O 3 ) substrate, obtained using a straightforward growth process that does not require a high-cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multiquantum well (MQW) grown on the masked β-Ga 2 O 3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ∼86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

  14. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

    Science.gov (United States)

    Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

    2013-03-22

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

  15. Highly luminescent and ultrastable CsPbBr{sub 3} perovskite quantum dots incorporated into a silica/alumina monolith

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zhichun; Kong, Long; Huang, Shouqiang; Li, Liang [School of Environmental Science and Engineering, Shanghai Jiao Tong University (China)

    2017-07-03

    We successfully prepared QDs incorporated into a silica/alumina monolith (QDs-SAM) by a simple sol-gel reaction of an Al-Si single precursor with CsPbBr{sub 3} QDs blended in toluene solution, without adding water and catalyst. The resultant transparent monolith exhibits high photoluminescence quantum yields (PLQY) up to 90 %, and good photostability under strong illumination of blue light for 300 h. We show that the preliminary ligand exchange of didodecyl dimethyl ammonium bromide (DDAB) was very important to protect CsPbBr{sub 3} QDs from surface damages during the sol-gel reaction, which not only allowed us to maintain the original optical properties of CsPbBr{sub 3} QDs but also prevented the aggregation of QDs and made the monolith transparent. The CsPbBr{sub 3} QDs-SAM in powder form was easily mixed into the resins and applied as color-converting layer with curing on blue light-emitting diodes (LED). The material showed a high luminous efficacy of 80 lm W{sup -1} and a narrow emission with a full width at half maximum (FWHM) of 25 nm. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Highly Luminescent and Ultrastable CsPbBr3 Perovskite Quantum Dots Incorporated into a Silica/Alumina Monolith.

    Science.gov (United States)

    Li, Zhichun; Kong, Long; Huang, Shouqiang; Li, Liang

    2017-07-03

    We successfully prepared QDs incorporated into a silica/alumina monolith (QDs-SAM) by a simple sol-gel reaction of an Al-Si single precursor with CsPbBr 3 QDs blended in toluene solution, without adding water and catalyst. The resultant transparent monolith exhibits high photoluminescence quantum yields (PLQY) up to 90 %, and good photostability under strong illumination of blue light for 300 h. We show that the preliminary ligand exchange of didodecyl dimethyl ammonium bromide (DDAB) was very important to protect CsPbBr 3 QDs from surface damages during the sol-gel reaction, which not only allowed us to maintain the original optical properties of CsPbBr 3 QDs but also prevented the aggregation of QDs and made the monolith transparent. The CsPbBr 3 QDs-SAM in powder form was easily mixed into the resins and applied as color-converting layer with curing on blue light-emitting diodes (LED). The material showed a high luminous efficacy of 80 lm W -1 and a narrow emission with a full width at half maximum (FWHM) of 25 nm. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Localized surface plasmon resonance enhanced photoluminescence of CdSe QDs in PMMA matrix on silver colloids with different shapes

    International Nuclear Information System (INIS)

    Lu Liu; Xu Xiaoliang; Shi Chaoshu; Ming Hai

    2010-01-01

    Localized surface plasmon resonance (LSPR) enhanced photoluminescences (PL) from CdSe quantum dots (QDs) on worm-like or quasi-spherical silver colloids have been investigated. The shape of silver colloid film is controlled by annealing temperature (200 o C∼350 o C). Strong PL enhancements of CdSe QDs on both as-grown and annealed silver colloid films are observed. The results show that the PL enhancement factor of CdSe QDs on worm-like silver colloid film reaches as high as 15-fold. Moreover, the enhancement factor is 5 times larger than that obtained from the quasi-spherical silver colloids. The superiority of worm-like silver nanostructure on LSPR enhanced photoluminescence is attributed to its larger size, hot spots and multiple dipole resonance modes coupling, which are induced by aggregation effect.

  18. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

    International Nuclear Information System (INIS)

    Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.

    2006-01-01

    Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

  19. Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

    International Nuclear Information System (INIS)

    Yang, W. C.; Wu, C. H.; Tseng, Y. T.; Chiu, S. Y.; Cheng, K. Y.

    2015-01-01

    The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation

  20. Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Kageyama, Takeo; Miyamoto, Tomoyuki; Ohta, Masataka; Matsuura, Tetsuya; Matsui, Yasutaka; Furuhata, Tatsuya; Koyama, Fumio

    2004-01-01

    A surfactant effect of antimony (Sb) on highly strained GaInAs quantum wells (QWs) was studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL) was observed by adding the dilute Sb. The QWs showed an increased PL intensity and narrow linewidth of 23 meV for the wavelength range up to 1180 nm. An atomic force microscope study showed a flattened surface morphology by the introduction of the Sb. Broad-area lasers with a GaInAsSb/GaAs double-QW active layer emitting at 1170 nm showed a low threshold current density of 125 A/cm 2 per well for an infinite cavity length

  1. A highly efficient single-photon source based on a quantum dot in a photonic nanowire

    DEFF Research Database (Denmark)

    Claudon, Julien; Bleuse, Joel; Malik, Nitin Singh

    2010-01-01

    –4 or a semiconductor quantum dot5–7. Achieving a high extraction efficiency has long been recognized as a major issue, and both classical solutions8 and cavity quantum electrodynamics effects have been applied1,9–12. We adopt a different approach, based on an InAs quantum dot embedded in a GaAs photonic nanowire......The development of efficient solid-state sources of single photons is a major challenge in the context of quantum communication,optical quantum information processing and metrology1. Such a source must enable the implementation of a stable, single-photon emitter, like a colour centre in diamond2...

  2. Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Birkedal, Dan; Hvam, Jørn Märcher

    2003-01-01

    A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki-Taupin...

  3. Highly Luminescent Water-Dispersible NIR-Emitting Wurtzite CuInS2/ZnS Core/Shell Colloidal Quantum Dots

    NARCIS (Netherlands)

    Xia, Chenghui; Meeldijk, Johannes D.; Gerritsen, Hans C.; De Mello Donega, Celso

    2017-01-01

    Copper indium sulfide (CIS) quantum dots (QDs) are attractive as labels for biomedical imaging, since they have large absorption coefficients across a broad spectral range, size- and composition-tunable photoluminescence from the visible to the near-infrared, and low toxicity. However, the

  4. Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

    KAUST Repository

    Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S.

    2018-01-01

    to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field

  5. Reusable Xerogel Containing Quantum Dots with High Fluorescence Retention

    Directory of Open Access Journals (Sweden)

    Xiang-Yong Liang

    2018-03-01

    Full Text Available Although various analytical methods have been established based on quantum dots (QDs, most were conducted in solution, which is inadequate for storage/transportation and rapid analysis. Moreover, the potential environmental problems caused by abandoned QDs cannot be ignored. In this paper, a reusable xerogel containing CdTe with strong emission is established by introducing host–guest interactions between QDs and polymer matrix. This xerogel shows high QDs loading capacity without decrease or redshift in fluorescence (the maximum of loading is 50 wt % of the final xerogel, which benefits from the steric hindrance of β-cyclodextrin (βCD molecules. Host–guest interactions immobilize QDs firmly, resulting in the excellent fluorescence retention of the xerogel. The good detecting performance and reusability mean this xerogel could be employed as a versatile analysis platform (for quantitative and qualitative analyses. In addition, the xerogel can be self-healed by the aid of water.

  6. SPAD electronics for high-speed quantum communications

    Science.gov (United States)

    Bienfang, Joshua C.; Restelli, Alessandro; Migdall, Alan

    2011-01-01

    We discuss high-speed electronics that support the use of single-photon avalanche diodes (SPADs) in gigahertz singlephoton communications systems. For InGaAs/InP SPADs, recent work has demonstrated reduced afterpulsing and count rates approaching 500 MHz can be achieved with gigahertz periodic-gating techniques designed to minimize the total avalanche charge to less than 100 fC. We investigate afterpulsing in this regime and establish a connection to observations using more conventional techniques. For Si SPADs, we report the benefits of improved timing electronics that enhance the temporal resolution of Si SPADs used in a free-space quantum key distribution (QKD) system operating in the GHz regime. We establish that the effects of count-rate fluctuations induced by daytime turbulent scintillation are significantly reduced, benefitting the performance of the QKD system.

  7. Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, T.K.; Zorn, M.; Zeimer, U.; Kissel, H.; Bugge, F.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2005-09-01

    Highly strained In{sub x}Ga{sub 1-x}As quantum wells (QWs) with GaAs barriers emitting around 1.2 {mu}m are grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures using conventional precursors. The effects of growth temperature, V/III ratio and growth rate on QW composition and luminescence properties are studied. The variation of indium incorporation with V/III ratio at a growth temperature of 510 C is found to be opposite to the results reported for 700 C. By an appropriate choice of the growth parameters, we could extend the room temperature photoluminescence (PL) wavelength of InGaAs/GaAs QWs up to about 1.24 {mu}m which corresponds to an average indium content of 41% in the QW. The results of the growth study were applied to broad area laser diodes emitting at 1193 nm with low threshold current densities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Device Characterization of High Performance Quantum Dot Comb Laser

    KAUST Repository

    Rafi, Kazi

    2012-02-01

    The cost effective comb based laser sources are considered to be one of the prominent emitters used in optical communication (OC) and photonic integrated circuits (PIC). With the rising demand for delivering triple-play services (voice, data and video) in FTTH and FTTP-based WDM-PON networks, metropolitan area network (MAN), and short-reach rack-to-rack optical computer communications, a versatile and cost effective WDM transmitter design is required, where several DFB lasers can be replaced by a cost effective broadband comb laser to support on-chip optical signaling. Therefore, high performance quantum dot (Q.Dot) comb lasers need to satisfy several challenges before real system implementations. These challenges include a high uniform broadband gain spectrum from the active layer, small relative intensity noise with lower bit error rate (BER) and better temperature stability. Thus, such short wavelength comb lasers offering higher bandwidth can be a feasible solution to address these challenges. However, they still require thorough characterization before implementation. In this project, we briefly characterized the novel quantum dot comb laser using duty cycle based electrical injection and temperature variations where we have observed the presence of reduced thermal conductivity in the active layer. This phenomenon is responsible for the degradation of device performance. Hence, different performance trends, such as broadband emission and spectrum stability were studied with pulse and continuous electrical pumping. The tested comb laser is found to be an attractive solution for several applications but requires further experiments in order to be considered for photonic intergraded circuits and to support next generation computer-communications.

  9. Interface between path and orbital angular momentum entanglement for high-dimensional photonic quantum information.

    Science.gov (United States)

    Fickler, Robert; Lapkiewicz, Radek; Huber, Marcus; Lavery, Martin P J; Padgett, Miles J; Zeilinger, Anton

    2014-07-30

    Photonics has become a mature field of quantum information science, where integrated optical circuits offer a way to scale the complexity of the set-up as well as the dimensionality of the quantum state. On photonic chips, paths are the natural way to encode information. To distribute those high-dimensional quantum states over large distances, transverse spatial modes, like orbital angular momentum possessing Laguerre Gauss modes, are favourable as flying information carriers. Here we demonstrate a quantum interface between these two vibrant photonic fields. We create three-dimensional path entanglement between two photons in a nonlinear crystal and use a mode sorter as the quantum interface to transfer the entanglement to the orbital angular momentum degree of freedom. Thus our results show a flexible way to create high-dimensional spatial mode entanglement. Moreover, they pave the way to implement broad complex quantum networks where high-dimensionally entangled states could be distributed over distant photonic chips.

  10. Quantum-well exciton polariton emission from multi-quantum-well wire structures

    Science.gov (United States)

    Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

    The radiative decay of quantum-well exciton (QWE) polaritons in microstructured Al0.3Ga0.7As - GaAs multi-quantum wells (MQW) has been studied by photoluminescence spectroscopy. Periodic wire structures with lateral periodicities a = 250-500 nm and lateral widths t = 100-200 nm have been fabricated by plasma etching. The thickness of the QWs was 13 nm. In the QW wire samples the free-exciton photoluminescence was strongly reduced and the QWE polariton emission was observed as a maximum peaked at a 3 meV higher energy than the free QWE transition. In samples which had only a microstructured cladding layer, the free-exciton photoluminescence was dominant in the spectrum and the QWE polariton emission was observed as a shoulder on the high-energy side of the free QWE transition. In addition, two transitions at the low energy side of the free QWE photoluminescence were present in the microstructured samples, which were related to etching induced states.

  11. Strong white photoluminescence from annealed zeolites

    International Nuclear Information System (INIS)

    Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

    2014-01-01

    The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

  12. Characteristics of exciton photoluminescence kinetics in low-dimensional silicon structures

    CERN Document Server

    Sachenko, A V; Manojlov, E G; Svechnikov, S V

    2001-01-01

    The time-resolved visible photoluminescence of porous nanocrystalline silicon films obtained by laser ablation have been measured within the temperature range 90-300 K. A study has been made of the interrelationship between photoluminescence characteristics (intensity, emission spectra, relaxation times, their temperature dependencies and structural and dielectric properties (size and shapes of Si nanocrystals, oxide phase of nanocrystal coating, porosity). A photoluminescence model is proposed that describes photon absorption and emission occurring in quantum-size Si nanocrystals while coupled subsystems of electron-hole pairs and excitons take part in the recombination. Possible excitonic Auger recombination mechanism in low-dimensional silicon structures is considered

  13. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-09-05

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  14. Preparation of carbon quantum dots with a high quantum yield and the application in labeling bovine serum albumin

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Pengpeng; Zhang, Changchang; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn; Cui, Ping, E-mail: cokecp@sohu.com

    2016-04-15

    Graphical abstract: - Highlights: • Cheap carbon quantum dots (CQDs) with a high quantum yield were prepared. • The preparation process and surface functionalization on CQDs are rather facile. • Such functionalized CQDs can be attached to BSA covalently. • This predicts that some biomolecules can be labeled by the fluorescent CQDs. - Abstract: An economic and green approach of manufacturing carbon quantum dots (CQDs) with a high quantum yield (denoted with HQY-CQDs) and the application in labeling bovine serum albumin (BSA) were described in detail in this work. Firstly, the cheap resources of citric acid and glycine were pyrolysed in drying oven for preparing the CQDs. Then the product was immersed in tetrahydrofuran for 8 h. HQY-CQDs were obtained by removing tetrahydrofuran from the supernate and were evaluated that they possessed a much higher quantum yield compared with that without dealing with tetrahydrofuran and a wonderful photo-bleaching resistance. Such HQY-CQDs could be functionalized by N-hydroxysuccinimide and successively combined with BSA covalently. Thus fluorescent labeling on BSA was realized. The HQY-CQDs were demonstrated with transmission electron microscopy and the chemical modification with N-hydroxysuccinimide was proved by infrared and X-ray photoelectron spectra. Labeling BSA with the HQY-CQDs was confirmed by gel electrophoresis and fluorescence imaging.

  15. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Science.gov (United States)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  16. Beyond quantum-classical analogies: high time for agreement?

    Science.gov (United States)

    Marrocco, Michele

    Lately, many quantum-classical analogies have been investigated and published in many acknowledged journals. Such a surge of research on conceptual connections between quantum and classical physics forces us to ask whether the correspondence between the quantum and classical interpretation of the reality is deeper than the correspondence principle stated by Bohr. Here, after a short introduction to quantum-classical analogies from the recent literature, we try to examine the question from the perspective of a possible agreement between quantum and classical laws. A paradigmatic example is given in the striking equivalence between the classical Mie theory of electromagnetic scattering from spherical scatterers and the corresponding quantum-mechanical wave scattering analyzed in terms of partial waves. The key features that make the correspondence possible are examined and finally employed to deal with the fundamental blackbody problem that marks the initial separation between classical and quantum physics. The procedure allows us to recover the blackbody spectrum in classical terms and the proof is rich in consequences. Among them, the strong analogy between the quantum vacuum and its classical counterpart.

  17. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Banavoth, Murali; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan; AlYami, Noktan; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N.; Mohammed, Omar F.; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman

    2016-01-01

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  18. On-chip generation of high-dimensional entangled quantum states and their coherent control.

    Science.gov (United States)

    Kues, Michael; Reimer, Christian; Roztocki, Piotr; Cortés, Luis Romero; Sciara, Stefania; Wetzel, Benjamin; Zhang, Yanbing; Cino, Alfonso; Chu, Sai T; Little, Brent E; Moss, David J; Caspani, Lucia; Azaña, José; Morandotti, Roberto

    2017-06-28

    Optical quantum states based on entangled photons are essential for solving questions in fundamental physics and are at the heart of quantum information science. Specifically, the realization of high-dimensional states (D-level quantum systems, that is, qudits, with D > 2) and their control are necessary for fundamental investigations of quantum mechanics, for increasing the sensitivity of quantum imaging schemes, for improving the robustness and key rate of quantum communication protocols, for enabling a richer variety of quantum simulations, and for achieving more efficient and error-tolerant quantum computation. Integrated photonics has recently become a leading platform for the compact, cost-efficient, and stable generation and processing of non-classical optical states. However, so far, integrated entangled quantum sources have been limited to qubits (D = 2). Here we demonstrate on-chip generation of entangled qudit states, where the photons are created in a coherent superposition of multiple high-purity frequency modes. In particular, we confirm the realization of a quantum system with at least one hundred dimensions, formed by two entangled qudits with D = 10. Furthermore, using state-of-the-art, yet off-the-shelf telecommunications components, we introduce a coherent manipulation platform with which to control frequency-entangled states, capable of performing deterministic high-dimensional gate operations. We validate this platform by measuring Bell inequality violations and performing quantum state tomography. Our work enables the generation and processing of high-dimensional quantum states in a single spatial mode.

  19. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun

    2016-08-16

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  20. Highly Efficient Red and White Organic Light-Emitting Diodes with External Quantum Efficiency beyond 20% by Employing Pyridylimidazole-Based Metallophosphors.

    Science.gov (United States)

    Miao, Yanqin; Tao, Peng; Wang, Kexiang; Li, Hongxin; Zhao, Bo; Gao, Long; Wang, Hua; Xu, Bingshe; Zhao, Qiang

    2017-11-01

    Two highly efficient red neutral iridium(III) complexes, Ir1 and Ir2, were rationally designed and synthesized by selecting two pyridylimidazole derivatives as the ancillary ligands. Both Ir1 and Ir2 show nearly the same photoluminescence emission with the maximum peak at 595 nm (shoulder band at about 638 nm) and achieve high solution quantum yields of up to 0.47 for Ir1 and 0.57 for Ir2. Employing Ir1 and Ir2 as emitters, the fabricated red organic light-emitting diodes (OLEDs) show outstanding performance with the maximum external quantum efficiency (EQE), current efficiency (CE), and power efficiency (PE) of 20.98%, 33.04 cd/A, and 33.08 lm/W for the Ir1-based device and 22.15%, 36.89 cd/A, and 35.85 lm/W for the Ir2-based device, respectively. Furthermore, using Ir2 as red emitter, a trichromatic hybrid white OLED, showing good warm white emission with low correlated color temperature of white device also realizes excellent device efficiencies with the maximum EQE, CE, and PE reaching 22.74%, 44.77 cd/A, and 46.89 lm/W, respectively. Such high electroluminescence performance for red and white OLEDs indicates that Ir1 and Ir2 as efficient red phosphors have great potential for future OLED displays and lightings applications.

  1. High threshold distributed quantum computing with three-qubit nodes

    International Nuclear Information System (INIS)

    Li Ying; Benjamin, Simon C

    2012-01-01

    In the distributed quantum computing paradigm, well-controlled few-qubit ‘nodes’ are networked together by connections which are relatively noisy and failure prone. A practical scheme must offer high tolerance to errors while requiring only simple (i.e. few-qubit) nodes. Here we show that relatively modest, three-qubit nodes can support advanced purification techniques and so offer robust scalability: the infidelity in the entanglement channel may be permitted to approach 10% if the infidelity in local operations is of order 0.1%. Our tolerance of network noise is therefore an order of magnitude beyond prior schemes, and our architecture remains robust even in the presence of considerable decoherence rates (memory errors). We compare the performance with that of schemes involving nodes of lower and higher complexity. Ion traps, and NV-centres in diamond, are two highly relevant emerging technologies: they possess the requisite properties of good local control, rapid and reliable readout, and methods for entanglement-at-a-distance. (paper)

  2. High energy deep inelastic scattering in perturbative quantum chromodynamics

    International Nuclear Information System (INIS)

    Wallon, S.

    1996-01-01

    In this PhD thesis, we deal with high energy Deep Inelastic Scattering in Perturbative Quantum Chromodynamics (QCD). In this work, two main topics are emphasized: The first one deals with dynamics based on perturbative renormalization group, and on perturbative Regge approaches. We discuss the applicability of these predictions, the possibility of distinguishing them in the HERA experiments, and their unification. We prove that the perturbative Regge dynamic can be successfully applied to describe the HERA data. Different observables are proposed for distinguishing these two approaches. We show that these two predictions can be unified in a system of equations. In the second one, unitarization and saturation problems in high energy QCD are discussed. In the multi-Regge approach, equivalent to the integrable one-dimensional XXX Heisenberg spin chain, we develop methods in order to solve this system, based on the Functional Bethe Ansatz. In the dipole model context, we propose a new formulation of unitarity and saturation effects, using Wilson loops. (author)

  3. Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Zakharov ND

    2007-01-01

    Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

  4. Excitons and trions in modulation doped structures in high magnetic fields

    International Nuclear Information System (INIS)

    Kochereshko, V.; Andronikov, D.; Platonov, A.; Crooker, S.; Barrick, T.; Karczewski, G.; Tronc, P.

    2004-01-01

    Photoluminescence spectra of modulation-doped CdTe/CdMgTe quantum well structures containing two-dimensional electron gases of low, moderate and high electron concentrations were studied in high magnetic fields up to 45 T. The recombination line of triplet trion state was found in the spectra. A model calculation of photoluminescence spectra in magnetic fields, which takes into account singlet and triplet trion states, was carried out. It was shown that the dark triplet becomes observable in photoluminescence spectra because it becomes the only recombination channel when the formation of the singlet trion state is suppressed by magnetic fields. (author)

  5. Storing quantum information in spins and high-sensitivity ESR.

    Science.gov (United States)

    Morton, John J L; Bertet, Patrice

    2018-02-01

    Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per Hz, with prospects to scale down to even fewer spins. Copyright © 2017. Published by Elsevier Inc.

  6. Storing quantum information in spins and high-sensitivity ESR

    Science.gov (United States)

    Morton, John J. L.; Bertet, Patrice

    2018-02-01

    Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per √{ Hz } , with prospects to scale down to even fewer spins.

  7. Many-body effects in the gain spectra of highly excited quantum-dot lasers

    International Nuclear Information System (INIS)

    Schneider, H. C.; Chow, W. W.; Koch, S. W.

    2001-01-01

    Optical gain spectra are computed for quantum dots under high excitation conditions, where there is a non-negligible two-dimensional carrier density surrounding the dots. Using a screened Hartree-Fock theory to describe the influence of the Coulomb interaction, we find different self-energy shifts for the dot and quantum-well transitions. Furthermore, in contrast to the result for quantum-well and bulk systems, the peak gain at the quantum-dot transition computed including Coulomb effects is reduced from its free carrier value

  8. Engineering two-photon high-dimensional states through quantum interference

    Science.gov (United States)

    Zhang, Yingwen; Roux, Filippus S.; Konrad, Thomas; Agnew, Megan; Leach, Jonathan; Forbes, Andrew

    2016-01-01

    Many protocols in quantum science, for example, linear optical quantum computing, require access to large-scale entangled quantum states. Such systems can be realized through many-particle qubits, but this approach often suffers from scalability problems. An alternative strategy is to consider a lesser number of particles that exist in high-dimensional states. The spatial modes of light are one such candidate that provides access to high-dimensional quantum states, and thus they increase the storage and processing potential of quantum information systems. We demonstrate the controlled engineering of two-photon high-dimensional states entangled in their orbital angular momentum through Hong-Ou-Mandel interference. We prepare a large range of high-dimensional entangled states and implement precise quantum state filtering. We characterize the full quantum state before and after the filter, and are thus able to determine that only the antisymmetric component of the initial state remains. This work paves the way for high-dimensional processing and communication of multiphoton quantum states, for example, in teleportation beyond qubits. PMID:26933685

  9. Macroscopic quantum electrodynamics of high-Q cavities

    Energy Technology Data Exchange (ETDEWEB)

    Khanbekyan, Mikayel

    2009-10-27

    In this thesis macroscopic quantum electrodynamics in linear media was applied in order to develop an universally valid quantum theory for the description of the interaction of the electromagnetic field with atomic sources in high-Q cavities. In this theory a complete description of the characteristics of the emitted radiation is given. The theory allows to show the limits of the applicability of the usually applied theory. In order to establish an as possible generally valid theory first the atom-field interaction was studied in the framework of macroscopic quantum electrodynamics in dispersive and absorptive media. In order to describe the electromagnetic field from Maxwell's equations was started, whereby the noise-current densities, which are connected with the absorption of the medium, were included. The solution of these equations expresses the electromagnetic field variables by the noise-current densities by means of Green's tensor of the macroscopic Maxwell equations. The explicit quantization is performed by means of the noise-current densities, whereby a diagonal Hamiltonian is introduced, which then guarantees the time development according to Maxwell's equation and the fulfillment of the fundamental simultaneous commutation relations of the field variables. In the case of the interaction of the medium-supported field with atoms the Hamiltonian must be extended by atom-field interactions energies, whereby the canonical coupling schemes of the minimal or multipolar coupling can be used. The dieelectric properties of the material bodies as well as their shape are coded in the Green tensor of the macroscopic Maxwell equations. As preparing step first the Green tensor was specified in order to derive three-dimensional input-output relations for the electromagnetic field operators on a plane multilayer structure. Such a general dewscription of the electromagnetic field allows the inclusion both of dispersion and absorption of the media and the

  10. Creating high yield water soluble luminescent graphene quantum dots via exfoliating and disintegrating carbon nanotubes and graphite flakes.

    Science.gov (United States)

    Lin, Liangxu; Zhang, Shaowei

    2012-10-21

    We have developed an effective method to exfoliate and disintegrate multi-walled carbon nanotubes and graphite flakes. With this technique, high yield production of luminescent graphene quantum dots with high quantum yield and low oxidization can be achieved.

  11. Modification of g-C{sub 3}N{sub 4} nanosheets by carbon quantum dots for highly efficient photocatalytic generation of hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kui; Su, Feng-Yun; Zhang, Wei-De, E-mail: zhangwd@scut.edu.cn

    2016-07-01

    Graphical abstract: Carbon quantum dots-modified graphitic carbon nitride nanosheets (CNNS/CQDs) catalysts with high and stable activity for photocatalytic generation of hydrogen through water splitting were successfully constructed. - Highlights: • Composite photocatalysts based on g-C{sub 3}N{sub 4} nanosheets and CQDs were prepared. • High visible light photocatalytic activity for H{sub 2} evolution. • Effective separation and transfer of charge carriers. - Abstract: Carbon quantum dots (CQDs) were deposited onto graphite-like carbon nitride nanosheets (CNNS) to form CNNS/CQDs composites. The prepared CNNS/CQDs composites exhibit much higher photocatalytic activity under visible light irradiation than pure CNNS do. The CNNS/CQDs-7 sample displays the highest photocatalytic performance, with H{sub 2} production rate of 116.1 μmol h{sup −1}, which is three times of that over pure CNNS (37.8 μmol h{sup −1}). Photoluminescence spectroscopy and photoelectrochemical (PEC) analysis reveal that the CQDs are favorable for trapping electrons and promoting the separation of photogenerated electron-hole pairs in CNNS. A possible photocatalytic mechanism of the enhanced photocatalytic performance for H{sub 2} generation over CNNS/CQDs will be proposed in this paper.

  12. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

    KAUST Repository

    Zhang, Meng

    2011-05-01

    InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

  13. Developments in lattice quantum chromodynamics for matter at high ...

    Indian Academy of Sciences (India)

    2015-05-06

    May 6, 2015 ... Lattice quantum chromodynamics; finite density; sign problem. PACS Nos 11.15. ... Lattice QCD relies on importance sampling assigning a real ..... conjectured that a single saddle point (e.g. the perturbative one) suffices [53].

  14. High efficiency detection technology on quantum action using radiation excitation

    International Nuclear Information System (INIS)

    Okubo, Masataka; Ukibe, Masahiro; Sakamoto, Isao; Hayashi, Nobuyuki; Shoji, Akira; Kobayashi, Naoto

    2000-01-01

    In 1998 fiscal year, as a local quasi particle loss process, it was elucidated that there was a quasi particle loss induced with magnetic flux quantum trapped by a detector on its cooling. Hitherto, it was reported that action of a tunnel junction detector was different by its magnetic history. That is, the detector had unstability such as variation of its action on its cooling. Therefore, the quasi particle loss induced by magnetic flux quantum forming cause of the unstability was quantitatively evaluated. As a result, it was elucidated that output of the detector was reduced half only by trapping the magnetic flux quantum with numbers corresponding to weak magnetic field like geomagnetism. And, this phenomenon was also described by using a model concept with quasi particle trapping due to the magnetic flux quantum. (G.K.)

  15. Interqubit coupling mediated by a high-excitation-energy quantum object

    NARCIS (Netherlands)

    Ashhab, S.; Niskanen, A.O.; Harrabi, K.; Nakamura, Y.; Picot, T.; De Groot, P.C.; Harmans, C.J.P.M.; Mooij, J.E.; Nori, F.

    2008-01-01

    We consider a system composed of two qubits and a high excitation energy quantum object used to mediate coupling between the qubits. We treat the entire system quantum mechanically and analyze the properties of the eigenvalues and eigenstates of the total Hamiltonian. After reproducing well known

  16. High-dimensional quantum cryptography with twisted light

    International Nuclear Information System (INIS)

    Mirhosseini, Mohammad; Magaña-Loaiza, Omar S; O’Sullivan, Malcolm N; Rodenburg, Brandon; Malik, Mehul; Boyd, Robert W; Lavery, Martin P J; Padgett, Miles J; Gauthier, Daniel J

    2015-01-01

    Quantum key distribution (QKD) systems often rely on polarization of light for encoding, thus limiting the amount of information that can be sent per photon and placing tight bounds on the error rates that such a system can tolerate. Here we describe a proof-of-principle experiment that indicates the feasibility of high-dimensional QKD based on the transverse structure of the light field allowing for the transfer of more than 1 bit per photon. Our implementation uses the orbital angular momentum (OAM) of photons and the corresponding mutually unbiased basis of angular position (ANG). Our experiment uses a digital micro-mirror device for the rapid generation of OAM and ANG modes at 4 kHz, and a mode sorter capable of sorting single photons based on their OAM and ANG content with a separation efficiency of 93%. Through the use of a seven-dimensional alphabet encoded in the OAM and ANG bases, we achieve a channel capacity of 2.05 bits per sifted photon. Our experiment demonstrates that, in addition to having an increased information capacity, multilevel QKD systems based on spatial-mode encoding can be more resilient against intercept-resend eavesdropping attacks. (paper)

  17. Theoretical analysis of quantum dot amplifiers with high saturation power and low noise figure

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers.......Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers....

  18. Quantum dot lasers: From promise to high-performance devices

    Science.gov (United States)

    Bhattacharya, P.; Mi, Z.; Yang, J.; Basu, D.; Saha, D.

    2009-03-01

    Ever since self-organized In(Ga)As/Ga(AI)As quantum dots were realized by molecular beam epitaxy, it became evident that these coherently strained nanostructures could be used as the active media in devices. While the expected advantages stemming from three-dimensional quantum confinement were clearly outlined, these were not borne out by the early experiments. It took a very detailed understanding of the unique carrier dynamics in the quantum dots to exploit their full potential. As a result, we now have lasers with emission wavelengths ranging from 0.7 to 1.54 μm, on GaAs, which demonstrate ultra-low threshold currents, near-zero chip and α-factor and large modulation bandwidth. State-of-the-art performance characteristics of these lasers are briefly reviewed. The growth, fabrication and characteristics of quantum dot lasers on silicon substrates are also described. With the incorporation of multiple quantum dot layers as a dislocation filter, we demonstrate lasers with Jth=900 A/cm 2. The monolithic integration of the lasers with guided wave modulators on silicon is also described. Finally, the properties of spin-polarized lasers with quantum dot active regions are described. Spin injection of electrons is done with a MnAs/GaAs tunnel barrier. Laser operation at 200 K is demonstrated, with the possibility of room temperature operation in the near future.

  19. Coupling of erbium dopants to yttrium orthosilicate photonic crystal cavities for on-chip optical quantum memories

    Energy Technology Data Exchange (ETDEWEB)

    Miyazono, Evan; Zhong, Tian; Craiciu, Ioana; Kindem, Jonathan M.; Faraon, Andrei, E-mail: faraon@caltech.edu [T. J. Watson Laboratory of Applied Physics, California Institute of Technology, 1200 E California Blvd, Pasadena, California 91125 (United States)

    2016-01-04

    Erbium dopants in crystals exhibit highly coherent optical transitions well suited for solid-state optical quantum memories operating in the telecom band. Here, we demonstrate coupling of erbium dopant ions in yttrium orthosilicate to a photonic crystal cavity fabricated directly in the host crystal using focused ion beam milling. The coupling leads to reduction of the photoluminescence lifetime and enhancement of the optical depth in microns-long devices, which will enable on-chip quantum memories.

  20. High-Efficiency Quantum Interrogation Measurements via the Quantum Zeno Effect

    International Nuclear Information System (INIS)

    Kwiat, P. G.; White, A. G.; Mitchell, J. R.; Nairz, O.; Weihs, G.; Weinfurter, H.; Zeilinger, A.

    1999-01-01

    The phenomenon of quantum interrogation allows one to optically detect the presence of an absorbing object, without the measuring light interacting with it. In an application of the quantum Zeno effect, the object inhibits the otherwise coherent evolution of the light, such that the probability that an interrogating photon is absorbed can in principle be arbitrarily small. We have implemented this technique, achieving efficiencies of up to 73% , and consequently exceeding the 50% theoretical maximum of the original ''interaction-free'' measurement proposal. We have also predicted and experimentally verified a previously unsuspected dependence on loss. (c) 1999 The American Physical Society

  1. Novel and high-performance asymmetric micro-supercapacitors based on graphene quantum dots and polyaniline nanofibers

    Science.gov (United States)

    Liu, Wenwen; Yan, Xingbin; Chen, Jiangtao; Feng, Yaqiang; Xue, Qunji

    2013-06-01

    In comparison with graphene sheets, graphene quantum dots (GQDs) exhibit novel chemical/physical properties including nanometer-size, abundant edge defects, good electrical conductivity, high mobility, chemical inertia, stable photoluminescence and better surface grafting, making them promising for fabricating various novel devices. In the present work, an asymmetric micro-supercapacitor, using GQDs as negative active material and polyaniline (PANI) nanofibers as positive active material, is built for the first time by a simple and controllable two-step electro-deposition on interdigital finger gold electrodes. Electrochemical measurements reveal that the as-made GQDs//PANI asymmetric micro-supercapacitor has a more excellent rate capability (up to 1000 V s-1) than previously reported electrode materials, as well as faster power response capability (with a very short relaxation time constant of 115.9 μs) and better cycling stability after 1500 cycles in aqueous electrolyte. On this basis, an all-solid-state GQDs//PANI asymmetric micro-supercapacitor is fabricated using H3PO4-polyvinyl alcohol gel as electrolyte, which also exhibits desirable electrochemical capacitive performances. These encouraging results presented here may open up new insight into GQDs with highly promising applications in high-performance energy-storage devices, and further expand the potential applications of GQDs beyond the energy-oriented application of GQDs discussed above.In comparison with graphene sheets, graphene quantum dots (GQDs) exhibit novel chemical/physical properties including nanometer-size, abundant edge defects, good electrical conductivity, high mobility, chemical inertia, stable photoluminescence and better surface grafting, making them promising for fabricating various novel devices. In the present work, an asymmetric micro-supercapacitor, using GQDs as negative active material and polyaniline (PANI) nanofibers as positive active material, is built for the first time by a

  2. High-speed linear optics quantum computing using active feed-forward.

    Science.gov (United States)

    Prevedel, Robert; Walther, Philip; Tiefenbacher, Felix; Böhi, Pascal; Kaltenbaek, Rainer; Jennewein, Thomas; Zeilinger, Anton

    2007-01-04

    As information carriers in quantum computing, photonic qubits have the advantage of undergoing negligible decoherence. However, the absence of any significant photon-photon interaction is problematic for the realization of non-trivial two-qubit gates. One solution is to introduce an effective nonlinearity by measurements resulting in probabilistic gate operations. In one-way quantum computation, the random quantum measurement error can be overcome by applying a feed-forward technique, such that the future measurement basis depends on earlier measurement results. This technique is crucial for achieving deterministic quantum computation once a cluster state (the highly entangled multiparticle state on which one-way quantum computation is based) is prepared. Here we realize a concatenated scheme of measurement and active feed-forward in a one-way quantum computing experiment. We demonstrate that, for a perfect cluster state and no photon loss, our quantum computation scheme would operate with good fidelity and that our feed-forward components function with very high speed and low error for detected photons. With present technology, the individual computational step (in our case the individual feed-forward cycle) can be operated in less than 150 ns using electro-optical modulators. This is an important result for the future development of one-way quantum computers, whose large-scale implementation will depend on advances in the production and detection of the required highly entangled cluster states.

  3. Control of Emission Color of High Quantum Yield CH3NH3PbBr3 Perovskite Quantum Dots by Precipitation Temperature.

    Science.gov (United States)

    Huang, He; Susha, Andrei S; Kershaw, Stephen V; Hung, Tak Fu; Rogach, Andrey L

    2015-09-01

    Emission color controlled, high quantum yield CH 3 NH 3 PbBr 3 perovskite quantum dots are obtained by changing the temperature of a bad solvent during synthesis. The products for temperatures between 0 and 60 °C have good spectral purity with narrow emission line widths of 28-36 nm, high absolute emission quantum yields of 74% to 93%, and short radiative lifetimes of 13-27 ns.

  4. Germanium nanoislands grown by radio frequency magnetron sputtering: Annealing time dependent surface morphology and photoluminescence

    International Nuclear Information System (INIS)

    Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Amjad, R. J.

    2013-01-01

    Structural and optical properties of ∼ 20 nm Ge nanoislands grown on Si(100) by radio frequency (rf) magnetron sputtering under varying annealing conditions are reported. Rapid thermal annealing at a temperature of 600°C for 30 s, 90 s, and 120 s are performed to examine the influence of annealing time on the surface morphology and photoluminescence properties. X-ray diffraction spectra reveal prominent Ge and GeO 2 peaks highly sensitive to the annealing time. Atomic force microscope micrographs of the as-grown sample show pyramidal nanoislands with relatively high-density 10 11 cm −2) ). The nanoislands become dome-shaped upon annealing through a coarsening process mediated by Oswald ripening. The room temperature photoluminescence peaks for both as-grown 3.29 eV) and annealed 3.19 eV) samples consist of high intensity and broad emission, attributed to the effect of quantum confinement. The red shift (∼0.10 eV) of the emission peak is attributed to the change in the size of the Ge nanoislands caused by annealing. Our easy fabrication method may contribute to the development of Ge nanostructure-based optoelectronics. (interdisciplinary physics and related areas of science and technology)

  5. The origins of macroscopic quantum coherence in high temperature superconductivity

    International Nuclear Information System (INIS)

    Turner, Philip; Nottale, Laurent

    2015-01-01

    Highlights: • We propose a new theoretical approach to superconductivity in p-type cuprates. • Electron pairing mechanisms in the superconducting and pseudogap phases are proposed. • A scale free network of dopants is key to macroscopic quantum coherence. - Abstract: A new, theoretical approach to macroscopic quantum coherence and superconductivity in the p-type (hole doped) cuprates is proposed. The theory includes mechanisms to account for e-pair coupling in the superconducting and pseudogap phases and their inter relations observed in these materials. Electron pair coupling in the superconducting phase is facilitated by local quantum potentials created by static dopants in a mechanism which explains experimentally observed optimal doping levels and the associated peak in critical temperature. By contrast, evidence suggests that electrons contributing to the pseudogap are predominantly coupled by fractal spin waves (fractons) induced by the fractal arrangement of dopants. On another level, the theory offers new insights into the emergence of a macroscopic quantum potential generated by a fractal distribution of dopants. This, in turn, leads to the emergence of coherent, macroscopic spin waves and a second associated macroscopic quantum potential, possibly supported by charge order. These quantum potentials play two key roles. The first involves the transition of an expected diffusive process (normally associated with Anderson localization) in fractal networks, into e-pair coherence. The second involves the facilitation of tunnelling between localized e-pairs. These combined effects lead to the merger of the super conducting and pseudo gap phases into a single coherent condensate at optimal doping. The underlying theory relating to the diffusion to quantum transition is supported by Coherent Random Lasing, which can be explained using an analogous approach. As a final step, an experimental program is outlined to validate the theory and suggests a new

  6. Formation and photoluminescence of "Cauliflower" silicon nanoparticles

    NARCIS (Netherlands)

    Tang, W.; Eilers, J.J.; Huis, van M.A.; Wang, D.; Schropp, R.E.I.; Vece, Di M.

    2015-01-01

    The technological advantages of silicon make silicon nanoparticles, which can be used as quantum dots in a tandem configuration, highly relevant for photovoltaics. However, producing a silicon quantum dot solar cell structure remains a challenge. Here we use a gas aggregation cluster source to

  7. Band-selective shaped pulse for high fidelity quantum control in diamond

    International Nuclear Information System (INIS)

    Chang, Yan-Chun; Xing, Jian; Liu, Gang-Qin; Jiang, Qian-Qing; Li, Wu-Xia; Zhang, Fei-Hao; Gu, Chang-Zhi; Pan, Xin-Yu; Long, Gui-Lu

    2014-01-01

    High fidelity quantum control of qubits is crucially important for realistic quantum computing, and it becomes more challenging when there are inevitable interactions between qubits. We introduce a band-selective shaped pulse, refocusing BURP (REBURP) pulse, to cope with the problems. The electron spin of nitrogen-vacancy centers in diamond is flipped with high fidelity by the REBURP pulse. In contrast with traditional rectangular pulses, the shaped pulse has almost equal excitation effect in a sharply edged region (in frequency domain). So the three sublevels of host 14 N nuclear spin can be flipped accurately simultaneously, while unwanted excitations of other sublevels (e.g., of a nearby 13 C nuclear spin) is well suppressed. Our scheme can be used for various applications such as quantum metrology, quantum sensing, and quantum information process.

  8. Band-selective shaped pulse for high fidelity quantum control in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Yan-Chun; Xing, Jian; Liu, Gang-Qin; Jiang, Qian-Qing; Li, Wu-Xia [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Zhang, Fei-Hao [Tsinghua National Laboratory for Information Science and Technology, Beijing 100084 (China); State Key Laboratory of Low-Dimensional Physics and Department of Physics, Tsinghua University, Beijing 100084 (China); Gu, Chang-Zhi; Pan, Xin-Yu, E-mail: xypan@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China); Long, Gui-Lu [Tsinghua National Laboratory for Information Science and Technology, Beijing 100084 (China); State Key Laboratory of Low-Dimensional Physics and Department of Physics, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China)

    2014-06-30

    High fidelity quantum control of qubits is crucially important for realistic quantum computing, and it becomes more challenging when there are inevitable interactions between qubits. We introduce a band-selective shaped pulse, refocusing BURP (REBURP) pulse, to cope with the problems. The electron spin of nitrogen-vacancy centers in diamond is flipped with high fidelity by the REBURP pulse. In contrast with traditional rectangular pulses, the shaped pulse has almost equal excitation effect in a sharply edged region (in frequency domain). So the three sublevels of host {sup 14}N nuclear spin can be flipped accurately simultaneously, while unwanted excitations of other sublevels (e.g., of a nearby {sup 13}C nuclear spin) is well suppressed. Our scheme can be used for various applications such as quantum metrology, quantum sensing, and quantum information process.

  9. Versatile Tri(pyrazolyl)phosphanes as Phosphorus Precursors for the Synthesis of Highly Emitting InP/ZnS Quantum Dots.

    Science.gov (United States)

    Panzer, René; Guhrenz, Chris; Haubold, Danny; Hübner, René; Gaponik, Nikolai; Eychmüller, Alexander; Weigand, Jan J

    2017-11-13

    Tri(pyrazolyl)phosphanes (5 R1,R2 ) are utilized as an alternative, cheap and low-toxic phosphorus source for the convenient synthesis of InP/ZnS quantum dots (QDs). From these precursors, remarkably long-term stable stock solutions (>6 months) of P(OLA) 3 (OLAH=oleylamine) are generated from which the respective pyrazoles are conveniently recovered. P(OLA) 3 acts simultaneously as phosphorus source and reducing agent in the synthesis of highly emitting InP/ZnS core/shell QDs. These QDs are characterized by a spectral range between 530-620 nm and photoluminescence quantum yields (PL QYs) between 51-62 %. A proof-of-concept white light-emitting diode (LED) applying the InP/ZnS QDs as a color-conversion layer was built to demonstrate their applicability and processibility. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Salvador Dalí's paintings to introduce Quantum Mechanics concepts in High School

    OpenAIRE

    Rúbia de Fátima Antunes Martins Fernandes; Flaviston Ferreira Pires; Thaís Cyrino de Mello Forato; José Alves da Silva

    2017-01-01

    A few papers have presented results of teaching Quantum Mechanics in High School. As a high abstraction level is demanded, it is necessary to reconsider theoretical assumptions, approaches and methodologies, in order to reduce difficulties in its insertion. This paper presents the achievements of a research, which is a didactic proposal for High School comprising discussions about Quantum Mechanics, involving elements that relate Physics and some paintings of Salvador Dalí. Embracing the rela...

  11. Polarized electrons, trions, and nuclei in charged quantum dots

    Science.gov (United States)

    Bracker, A. S.; Tischler, J. G.; Korenev, V. L.; Gammon, D.

    2003-07-01

    We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization of photoluminescence. Electrons and nuclei are polarized indirectly through subsequent relaxation processes. Polarized electrons are identified by the Hanle effect for exciton and trion photoluminescence, while polarized nuclei are identified through the Overhauser effect in individual charged quantum dots.

  12. High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments.

    Science.gov (United States)

    Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

    2017-11-03

    Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

  13. Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

    DEFF Research Database (Denmark)

    Iida, Daisuke; Fadil, Ahmed; Chen, Yuntian

    2015-01-01

    We report internal quantum efficiency enhancement of thin p-GaN green quantumwell structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhance......We report internal quantum efficiency enhancement of thin p-GaN green quantumwell structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density...

  14. A study of highly correlated classical and quantum fluids

    International Nuclear Information System (INIS)

    Clements, B.E.

    1988-01-01

    We have determined, by molecular dynamics simulation, the l = 0, 2, 4, and 6 Legendre coefficients of the static pair-pair correlation function Q(r,r'), the dynamic pair-pair correlation function Q(r,r';t) and the dynamic four point correlation function S 4 (k, -k,q, -q;t). The interaction potential was taken to be Lennard-Jones. The simulation was carried out at two different values of density and temperature; one coinciding with that of liquid argon near its triple point and the other coinciding with high density argon at room temperature. We argue that an important contribution to the pair-pair correlation function comes from the thee-body correlations. We find that the Legendre coefficients of Q(r,r') provide strong evidence that, upon freezing, the resulting crystalline structure will be a close-packed structure. A study of dynamical fluctuations characterized by Legendre coefficients of the dynamic pair-pair correlation function support this assertion. Finally, we provide a discussion on a decoupling scheme, used in the literature, to approximate the static and dynamic four point correlation function. A variational calculation with the Penrose-Reatto-Chester-Jastrow density matrix is used to study the finite temperature properties of Bose quantum fluids. This analysis provides a systematic method for adding correction terms to the density matrix approach of Campbell, Ristig, Kurten and Senger. We find that the excitation spectrum for the elementary excitations has the proper temperature dependence in contrast to earlier calculations

  15. Engineering high-order nonlinear dissipation for quantum superconducting circuits

    Science.gov (United States)

    Mundhada, S. O.; Grimm, A.; Touzard, S.; Shankar, S.; Minev, Z. K.; Vool, U.; Mirrahimi, M.; Devoret, M. H.

    Engineering nonlinear driven-dissipative processes is essential for quantum control. In the case of a harmonic oscillator, nonlinear dissipation can stabilize a decoherence-free manifold, leading to protected quantum information encoding. One possible approach to implement such nonlinear interactions is to combine the nonlinearities provided by Josephson circuits with parametric pump drives. However, it is usually hard to achieve strong nonlinearities while avoiding undesired couplings. Here we propose a scheme to engineer a four-photon drive and dissipation in a harmonic oscillator by cascading experimentally demonstrated two-photon processes. We also report experimental progress towards realization of such a scheme. Work supported by: ARO, ONR, AFOSR and YINQE.

  16. Quantum stochastics

    CERN Document Server

    Chang, Mou-Hsiung

    2015-01-01

    The classical probability theory initiated by Kolmogorov and its quantum counterpart, pioneered by von Neumann, were created at about the same time in the 1930s, but development of the quantum theory has trailed far behind. Although highly appealing, the quantum theory has a steep learning curve, requiring tools from both probability and analysis and a facility for combining the two viewpoints. This book is a systematic, self-contained account of the core of quantum probability and quantum stochastic processes for graduate students and researchers. The only assumed background is knowledge of the basic theory of Hilbert spaces, bounded linear operators, and classical Markov processes. From there, the book introduces additional tools from analysis, and then builds the quantum probability framework needed to support applications to quantum control and quantum information and communication. These include quantum noise, quantum stochastic calculus, stochastic quantum differential equations, quantum Markov semigrou...

  17. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    DEFF Research Database (Denmark)

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

    2017-01-01

    is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

  18. High Quantum Efficiency 1024x1024 Longwave Infrared SLS FPA and Camera, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose a high quantum efficiency (QE) 1024x1024 longwave infrared focal plane array (LWIR FPA) and CAMERA with ~ 12 micron cutoff wavelength made from...

  19. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — We are proposing to utilize quantum dots to develop a super high-efficiency multijunction III-V solar cell for space. In metamorphic triple junction space solar...

  20. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    International Nuclear Information System (INIS)

    Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-01-01

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  1. Optical properties of the semiconductor quantum structure

    International Nuclear Information System (INIS)

    Haratizadeh, H.; Holtz, P.O.; Monemar, B.; Karlsoon, K.F.; Moskalenko, E.S.; Amano, H.; Akasaki, I.; Schoenfeld, W.V.; Garcia, J.M.; Petroff, P.M.

    2004-01-01

    Optical properties of the quantum structures have been discussed with emphasize of the AlGaN/GaN multiple quantum wells and InAs/GaAs quantum dot structures. We report on a detailed study of low temperature photoluminescence in Al 0 .07Ga 0 .93 N/GaN multiple quantum wells. The structures were nominally undoped multiple quantum well grown on sapphire substrate. The structure from discrete well width variations is here resolved in photoluminescence spectra. The results demonstrate that the theoretically estimated fields in this work are consistent with the experimental spectra

  2. High-fidelity gates in quantum dot spin qubits.

    Science.gov (United States)

    Koh, Teck Seng; Coppersmith, S N; Friesen, Mark

    2013-12-03

    Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.

  3. Novel High Power Type-I Quantum Well Cascade Diode Lasers

    Science.gov (United States)

    2017-08-30

    Novel High Power Type-I Quantum Well Cascade Diode Lasers The views, opinions and/or findings contained in this report are those of the author(s...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6... High Power Type-I Quantum Well Cascade Diode Lasers Report Term: 0-Other Email: leon.shterengas@stonybrook.edu Distribution Statement: 1-Approved

  4. Photoluminescence as a tool for characterizing point defects in semiconductors

    Science.gov (United States)

    Reshchikov, Michael

    2012-02-01

    Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

  5. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-15

    This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  6. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    International Nuclear Information System (INIS)

    Wagener, Viera; Olivier, E.J.; Botha, J.R.

    2009-01-01

    This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  7. Ultrafast spontaneous emission modulation of graphene quantum dots interacting with Ag nanoparticles in solution

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jianwei [Department of Physics, Shanghai University, Shanghai 200444 (China); Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); Lu, Jian, E-mail: luj@sari.ac.cn; Wang, Zhongyang, E-mail: wangzy@sari.ac.cn [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); Wang, Liang [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 200444 (China); Tian, Linfan [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210 (China); Deng, Xingxia [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Tian, Lijun [Department of Physics, Shanghai University, Shanghai 200444 (China); Pan, Dengyu [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China)

    2016-07-11

    We investigated the strong interaction between graphene quantum dots and silver nanoparticles in solution using time-resolved photoluminescence techniques. In solution, the silver nanoparticles are surrounded by graphene quantum dots and interacted with graphene quantum dots through exciton-plasmon coupling. An ultrafast spontaneous emission process (lifetime 27 ps) was observed in such a mixed solution. This ultrafast lifetime corresponds to the emission rate exceeding 35 GHz, with the purcell enhancement by a factor of ∼12. These experiment results pave the way for the realization of future high speed light sources applications.

  8. Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

    Directory of Open Access Journals (Sweden)

    Heyn Ch

    2009-01-01

    Full Text Available Abstract Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.

  9. Fine structure and optical pumping of spins in individual semiconductor quantum dots

    Science.gov (United States)

    Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

    2008-11-01

    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

  10. Optical Pumping of the Electronic and Nuclear Spin of Single Charge-Tunable Quantum Dots

    Science.gov (United States)

    Bracker, A. S.; Stinaff, E. A.; Gammon, D.; Ware, M. E.; Tischler, J. G.; Shabaev, A.; Efros, Al. L.; Park, D.; Gershoni, D.; Korenev, V. L.; Merkulov, I. A.

    2005-02-01

    We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.

  11. Fine structure and optical pumping of spins in individual semiconductor quantum dots

    International Nuclear Information System (INIS)

    Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L

    2008-01-01

    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

  12. Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

    Energy Technology Data Exchange (ETDEWEB)

    Llorens, J. M.; Wewior, L.; Cardozo de Oliveira, E. R.; Alén, B., E-mail: benito.alen@csic.es [IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid (Spain); Ulloa, J. M.; Utrilla, A. D.; Guzmán, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2015-11-02

    External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.

  13. Solvatochromism in highly luminescent environmental friendly carbon quantum dots for sensing applications: Conversion of bio-waste into bio-asset

    Science.gov (United States)

    Pramanik, A.; Biswas, S.; Kumbhakar, P.

    2018-02-01

    Recently studies on synthesis and fluorescence based sensing in biocompatible carbon quantum dots (CQDs) have become a widely spoken topic of research due to the several advantageous properties of CQDs in compared to semiconductor quantum dots. In this work, we have reported the rarely reported solvatochromism along-with a high photoluminescence (PL) quantum yield (PLQY) of 22%. Samples have been synthesized by using a simple process of hydrothermal carbonization of a naturally occurring bio-waste i.e. Aegle marmelos leaves powder. The linear absorption and PL emission characteristics of CQDs have been studied in different solvent environments to explore the origin of the observed excitation dependent PL emissions characteristics of the sample. The interesting solvatochromic PL (SPL) behavior of CQDs are observed at an excitation wavelength of 325 nm by dispersing them in different polar protic and aprotic solvents, which suggest their possible applications as a replacement of solvatochromic dye molecules for sensing applications. Different polarity functions and molecular-microscopic solvent polarity parameter (ETN) are used to calculate the change in dipole moment (Δδ) of the solute-solvent system and the origin of SPL in CQDs has been explained. The SPL behavior of CQDs has been utilized for fluorescence sensing of organic liquids (Ethanol and Tetrahydrofuran) in water. Whereas, the photo-induced electron transfer mediated quenching in PL of aqueous dispersion of CQDs has led to development of ;turn off; fluorescence Fe3 + ion sensor with a detection limit of 0.12 μM. Therefore, this work may open a new avenue of conversion of a bio-waste into a fluorescent bio-asset.

  14. High-order noise filtering in nontrivial quantum logic gates.

    Science.gov (United States)

    Green, Todd; Uys, Hermann; Biercuk, Michael J

    2012-07-13

    Treating the effects of a time-dependent classical dephasing environment during quantum logic operations poses a theoretical challenge, as the application of noncommuting control operations gives rise to both dephasing and depolarization errors that must be accounted for in order to understand total average error rates. We develop a treatment based on effective Hamiltonian theory that allows us to efficiently model the effect of classical noise on nontrivial single-bit quantum logic operations composed of arbitrary control sequences. We present a general method to calculate the ensemble-averaged entanglement fidelity to arbitrary order in terms of noise filter functions, and provide explicit expressions to fourth order in the noise strength. In the weak noise limit we derive explicit filter functions for a broad class of piecewise-constant control sequences, and use them to study the performance of dynamically corrected gates, yielding good agreement with brute-force numerics.

  15. High-performance dynamic quantum clustering on graphics processors

    Energy Technology Data Exchange (ETDEWEB)

    Wittek, Peter, E-mail: peterwittek@acm.org [Swedish School of Library and Information Science, University of Boras, Boras (Sweden)

    2013-01-15

    Clustering methods in machine learning may benefit from borrowing metaphors from physics. Dynamic quantum clustering associates a Gaussian wave packet with the multidimensional data points and regards them as eigenfunctions of the Schroedinger equation. The clustering structure emerges by letting the system evolve and the visual nature of the algorithm has been shown to be useful in a range of applications. Furthermore, the method only uses matrix operations, which readily lend themselves to parallelization. In this paper, we develop an implementation on graphics hardware and investigate how this approach can accelerate the computations. We achieve a speedup of up to two magnitudes over a multicore CPU implementation, which proves that quantum-like methods and acceleration by graphics processing units have a great relevance to machine learning.

  16. High-performance dynamic quantum clustering on graphics processors

    International Nuclear Information System (INIS)

    Wittek, Peter

    2013-01-01

    Clustering methods in machine learning may benefit from borrowing metaphors from physics. Dynamic quantum clustering associates a Gaussian wave packet with the multidimensional data points and regards them as eigenfunctions of the Schrödinger equation. The clustering structure emerges by letting the system evolve and the visual nature of the algorithm has been shown to be useful in a range of applications. Furthermore, the method only uses matrix operations, which readily lend themselves to parallelization. In this paper, we develop an implementation on graphics hardware and investigate how this approach can accelerate the computations. We achieve a speedup of up to two magnitudes over a multicore CPU implementation, which proves that quantum-like methods and acceleration by graphics processing units have a great relevance to machine learning.

  17. Quantum theoretical study of hydrogen under high pressure

    International Nuclear Information System (INIS)

    Biermann, S.

    2001-12-01

    In the first chapter we will review our knowledge of the phase diagram of hydrogen. Chapter 2 is dedicated to a summary of the standard density functional and molecular dynamics methods and shows how these are combined in the Car-Parrinello method. Here the nuclei are still treated as classical particles obeying Newtonian mechanics. In chapter 3 we drop this approximation. The path integral description of quantum statistics is added on top of the classical Car-Parrinello method and yields a formalism that includes quantum effects due to the finite de Broglie wavelength of the nuclei. Some technical aspects, namely the parallel implementation of the Path Integral Car-Parrinello (PICP) method, are discussed in chapter 4. In chapter 5 we present the results of our PICP calculations and compare them with prior calculations using the classical Car-Parrinello method as described in chapter 2. (orig.)

  18. Introduction to quantum calculation methods in high resolution NMR

    International Nuclear Information System (INIS)

    Goldman, M.

    1996-01-01

    New techniques as for instance the polarization transfer, the coherence with several quanta and the double Fourier transformation have appeared fifteen years ago. These techniques constitute a considerable advance in NMR. Indeed, they allow to study more complex molecules than it was before possible. But with these advances, the classical description of the NMR is not enough to understand precisely the physical phenomena induced by these methods. It is then necessary to resort to quantum calculation methods. The aim of this work is to present these calculation methods. After some recalls of quantum mechanics, the author describes the NMR with the density matrix, reviews the main methods of double Fourier transformation and then gives the principle of the relaxation times calculation. (O.M.)

  19. BROADENING OF BALMER LINES FOR HIGH QUANTUM NUMBER

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, B. H.

    1963-10-15

    It is shown that the impact theory breakdown at sufficiently large distances from the line center in effect lowers the principle quantum number at which electron broadening might otherwise be assumed to dominate. Since the impact theory breaks down and effectively the impact widths decrease progressively for the line components more distant from the center, the contributions of the components to the folding integral decrease rapidly except at their own positions. (R.E.U.)

  20. High-resolution hard x-ray spectroscopy of high-temperature plasmas using an array of quantum microcalorimeters.

    Science.gov (United States)

    Thorn, Daniel B; Gu, Ming F; Brown, Greg V; Beiersdorfer, Peter; Porter, F Scott; Kilbourne, Caroline A; Kelley, Richard L

    2008-10-01

    Quantum microcalorimeters show promise in being able to fully resolve x-ray spectra from heavy highly charged ions, such as would be found in hot plasmas with temperatures in excess of 50 keV. Quantum microcalorimeter arrays are able to achieve this as they have a high-resolving power and good effective quantum efficiency for hard x-ray photons up to 60 keV. To demonstrate this, we present a measurement using an array of thin HgTe quantum microcalorimeters to measure the K-shell spectrum of hydrogenlike through carbonlike praseodymium (Z=57). With this device we are able to attain a resolving power, E/DeltaE, of 1000 at a photon energy of 37 keV.

  1. Quantum Computers and Quantum Computer Languages: Quantum Assembly Language and Quantum C Language

    OpenAIRE

    Blaha, Stephen

    2002-01-01

    We show a representation of Quantum Computers defines Quantum Turing Machines with associated Quantum Grammars. We then create examples of Quantum Grammars. Lastly we develop an algebraic approach to high level Quantum Languages using Quantum Assembly language and Quantum C language as examples.

  2. Quantum Computers and Quantum Computer Languages: Quantum Assembly Language and Quantum C

    OpenAIRE

    Blaha, Stephen

    2002-01-01

    We show a representation of Quantum Computers defines Quantum Turing Machines with associated Quantum Grammars. We then create examples of Quantum Grammars. Lastly we develop an algebraic approach to high level Quantum Languages using Quantum Assembly language and Quantum C language as examples.

  3. High performance mode locking characteristics of single section quantum dash lasers.

    Science.gov (United States)

    Rosales, Ricardo; Murdoch, S G; Watts, R T; Merghem, K; Martinez, Anthony; Lelarge, Francois; Accard, Alain; Barry, L P; Ramdane, Abderrahim

    2012-04-09

    Mode locking features of single section quantum dash based lasers are investigated. Particular interest is given to the static spectral phase profile determining the shape of the mode locked pulses. The phase profile dependence on cavity length and injection current is experimentally evaluated, demonstrating the possibility of efficiently using the wide spectral bandwidth exhibited by these quantum dash structures for the generation of high peak power sub-picosecond pulses with low radio frequency linewidths.

  4. High-Rate Field Demonstration of Large-Alphabet Quantum Key Distribution

    Science.gov (United States)

    2016-10-12

    count rate of Bob’s detectors. In this detector-limited regime , it is advantageous to increase M to encode as much information as possible in each...High- rate field demonstration of large-alphabet quantum key distribution Catherine Lee,1, 2 Darius Bunandar,1 Zheshen Zhang,1 Gregory R. Steinbrecher...October 12, 2016) 2 Quantum key distribution (QKD) enables secure symmetric key exchange for information-theoretically secure com- munication via one-time

  5. Photoluminescence properties of Eu2+-activated Ca2Y2Si2O9 phosphor

    NARCIS (Netherlands)

    Zhang, Zhijun; Delsing, A.C.A.; Notten, P.H.L.; Zhao, Jingtai; Hintzen, H.T.J.M.

    2012-01-01

    Eu2+-activated Ca2Y2Si2O9 phosphors with different Eu2+ concentrations have been prepared by a solid-state reaction method at high temperature and their photoluminescence (PL) properties were investigated. Photoluminescence results show that Eu2+-doped Ca2Y2Si2O9 can be efficiently excited by

  6. Quantum-orbit theory of high-order atomic processes in strong fields

    International Nuclear Information System (INIS)

    Milosevic, D.B.

    2005-01-01

    Full text: Atoms submitted to strong laser fields can emit electrons and photons of very high energies. These processes find a highly intuitive and also quantitative explanation in terms of Feynman's path integral and the concept of quantum orbits. The quantum-orbit formalism is particularly useful for high-order atomic processes in strong laser fields. For such multi-step processes there is an intermediate step during which the electron is approximately under the influence of the laser field only and can absorb energy from the field. This leads to the appearance of the plateau structures in the emitted electron or photon spectra. Usual examples of such processes are high-order harmonic generation (HHG) and high-order above threshold ionization (HATI). These structures were also observed in high-order above-threshold detachment, laser-assisted x-ray-atom scattering, laser-assisted electron-ion recombination, and electron-atom scattering. We will present high-order strong-field approximation (SFA) and show how the quantum-orbit formalism follows from it. This will be done for various above-mentioned processes. For HHG a classification of quantum orbits will be given [10) and generalized to the presence of a static field. The low-energy part of the HHG spectra and the enhancement of HHG near the channel closings can be explained taking into account a large number of quantum orbits. For HATI we will concentrate on the case of few-cycle laser pulse. The influence of the carrier-envelope relative phase on the HATI spectrum can easily be explained in terms of quantum orbits. The SFA and the quantum-orbit results will be compared with the results obtained by Dieter Bauer using ab initio solutions of the time-dependent Schroedinger equation. It will be shown that the Coulomb effects are important for low-energy electron spectra. Refs. 11 (author)

  7. High-order optical nonlinearities in nanocomposite films dispersed with semiconductor quantum dots at high concentrations

    International Nuclear Information System (INIS)

    Tomita, Yasuo; Matsushima, Shun-suke; Yamagami, Ryu-ichi; Jinzenji, Taka-aki; Sakuma, Shohei; Liu, Xiangming; Izuishi, Takuya; Shen, Qing

    2017-01-01

    We describe the nonlinear optical properties of inorganic-organic nanocomposite films in which semiconductor CdSe quantum dots as high as 6.8 vol.% are dispersed. Open/closed Z-scan measurements, degenerate multi-wave mixing and femtosecond pump-probe/transient grating measurements are conducted. It is shown that the observed fifth-order optical nonlinearity has the cascaded third-order contribution that becomes prominent at high concentrations of CdSe QDs. It is also shown that there are picosecond-scale intensity-dependent and nanosecond-scale intensity-independent decay components in absorptive and refractive nonlinearities. The former is caused by the Auger process, while the latter comes from the electron-hole recombination process. (paper)

  8. High-fidelity projective read-out of a solid-state spin quantum register.

    Science.gov (United States)

    Robledo, Lucio; Childress, Lilian; Bernien, Hannes; Hensen, Bas; Alkemade, Paul F A; Hanson, Ronald

    2011-09-21

    Initialization and read-out of coupled quantum systems are essential ingredients for the implementation of quantum algorithms. Single-shot read-out of the state of a multi-quantum-bit (multi-qubit) register would allow direct investigation of quantum correlations (entanglement), and would give access to further key resources such as quantum error correction and deterministic quantum teleportation. Although spins in solids are attractive candidates for scalable quantum information processing, their single-shot detection has been achieved only for isolated qubits. Here we demonstrate the preparation and measurement of a multi-spin quantum register in a low-temperature solid-state system by implementing resonant optical excitation techniques originally developed in atomic physics. We achieve high-fidelity read-out of the electronic spin associated with a single nitrogen-vacancy centre in diamond, and use this read-out to project up to three nearby nuclear spin qubits onto a well-defined state. Conversely, we can distinguish the state of the nuclear spins in a single shot by mapping it onto, and subsequently measuring, the electronic spin. Finally, we show compatibility with qubit control: we demonstrate initialization, coherent manipulation and single-shot read-out in a single experiment on a two-qubit register, using techniques suitable for extension to larger registers. These results pave the way for a test of Bell's inequalities on solid-state spins and the implementation of measurement-based quantum information protocols. © 2011 Macmillan Publishers Limited. All rights reserved

  9. Two types of the relation between the intensity and the life time of photoluminescence of core/shell semiconductor quantum dots: Important role of Coulomb field and tunneling transitions

    Energy Technology Data Exchange (ETDEWEB)

    Osad' ko, I. S., E-mail: osadko@isan.troitsk.ru [Institute for spectroscopy RAS, Troitsk, 142190 Moscow (Russian Federation)

    2014-10-28

    It has been recently found [Gh. Galland, Y. Ghosh, A. Steinbrück, M. Sykora, J. A. Hollingsworth, and V. I. Klimov, Nature (London) 479, 203 (2011)] that semiconductor core/shell nanocrystals (NCs) with blinking photoluminescence (PL) can be of “A” or “B” type. NCs of A-type exhibit correlation between the intensity of PL and the life time. In NCs of B-type such correlation is absent. Simple model based on combination of the charging model and the two-level system model is proposed for describing emissive properties of NCs of both types. The model invokes fluctuations of emission ability γ{sub em} of NC to explain the emissive properties of NCs of B-type. Our combined model is also in agreement with anticorrelation between the duration τ{sub off} of off intervals and PL life time t{sub off} in off intervals found recently for NCs of A-type in the experiment [A. A. Cordones, T. J. Bixby, and S. R. Leone, Nano Lett. 11, 3366 (2011)].

  10. Lensless Photoluminescence Hyperspectral Camera Employing Random Speckle Patterns.

    Czech Academy of Sciences Publication Activity Database

    Žídek, Karel; Denk, Ondřej; Hlubuček, Jiří

    2017-01-01

    Roč. 7, č. 1 (2017), č. článku 15309. ISSN 2045-2322 R&D Projects: GA MŠk(CZ) LO1206; GA ČR(CZ) GJ17-26284Y Institutional support: RVO:61389021 Keywords : compressed sensing * photoluminescence imaging * laser speckles * single-pixel camera Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 4.259, year: 2016 https://www.nature.com/articles/s41598-017-14443-4

  11. Photoluminescence excitation measurements using pressure-tuned laser diodes

    Science.gov (United States)

    Bercha, Artem; Ivonyak, Yurii; Medryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

    2015-06-01

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

  12. Photoluminescence excitation measurements using pressure-tuned laser diodes

    International Nuclear Information System (INIS)

    Bercha, Artem; Ivonyak, Yurii; Mędryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

    2015-01-01

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available

  13. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  14. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Saharoui; Mughal, Asad Jahangir

    2015-01-01

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  15. A novel quantum information hiding protocol based on entanglement swapping of high-level Bell states

    International Nuclear Information System (INIS)

    Xu Shu-Jiang; Wang Lian-Hai; Chen Xiu-Bo; Niu Xin-Xin; Yang Yi-Xian

    2015-01-01

    Using entanglement swapping of high-level Bell states, we first derive a covert layer between the secret message and the possible output results of the entanglement swapping between any two generalized Bell states, and then propose a novel high-efficiency quantum information hiding protocol based on the covert layer. In the proposed scheme, a covert channel can be built up under the cover of a high-level quantum secure direct communication (QSDC) channel for securely transmitting secret messages without consuming any auxiliary quantum state or any extra communication resource. It is shown that this protocol not only has a high embedding efficiency but also achieves a good imperceptibility as well as a high security. (paper)

  16. High-Efficiency Iron Photosensitizer Explained with Quantum Wavepacket Dynamics

    DEFF Research Database (Denmark)

    Pápai, Mátyás Imre; Vankó, György; Rozgonyi, Tamas

    2016-01-01

    designed to destabilize the MC states. Using first-principles quantum nuclear wavepacket simulations we achieve a detailed understanding of the photoexcited decay mechanism, demonstrating that it is dominated by an ultrafast intersystem crossing from 1MLCT–3MLCT proceeded by slower kinetics associated...... with the conversion into the 3MC states. The slowest component of the 3MLCT decay, important in the context of photosensitizers, is much longer than related Fe(II) complexes because the population transfer to the 3MC states occurs in a region of the potential where the energy gap between the 3MLCT and 3MC states...

  17. Structural Control of InP/ZnS Core/Shell Quantum Dots Enables High-quality White LEDs.

    Science.gov (United States)

    Ganesh Kumar, Baskaran; Sadeghi, Sadra; Melikov, Rustamzhon; Mohammadi Aria, Mohammed; Bahmani Jalali, Houman; Ow-Yang, Cleva; Nizamoglu, Sedat

    2018-05-30

    Herein, we demonstrate that the structural and optical control of InP-based quantum dots can lead to high-performance LEDs. Zinc sulphide (ZnS) shells passivate the InP quantum dot core and increase the quantum yield in green-emitting quantum dots by 13-fold and red-emitting quantum dots by 8-fold. The optimised quantum dots are integrated in the liquid-state to eliminate aggregation induced emission quenching and we fabricated white LEDs with warm, neutral, and cool white appearance by the down-conversion mechanism. The quantum dot-functionalized white LEDs achieve luminous efficiency up to 14.7 lm/W and colour-rendering index up to 80. The structural and optical control of InP/ZnS core/shell quantum dots enable 23-fold enhancement in luminous efficiency of white LEDs compared to ones containing only QDs of InP core. © 2018 IOP Publishing Ltd.

  18. Multicolor photoluminescence in ITQ-16 zeolite film

    KAUST Repository

    Chen, Yanli

    2016-09-07

    Exploring the native defects of zeolites is highly important for understanding the properties of zeolites, such as catalysis and optics. Here, ITQ-16 films were prepared via the secondary growth method in the presence of Ge atoms. Various intrinsic defects of ITQ-16 films were fully studied through photoluminescence and FTIR characterizations. It was found that both the as-synthesized and calcined ITQ-16 films displayed multicolor photoluminescence including ultraviolet, blue, green and red emissions by exciting upon appropriate wavelengths. The results indicate that Si―OH and non-bridging oxygen hole centers(NBOHCs) are responsible for the origin of green and red emissions at 540―800 nm, while according to a variety of emission bands of calcined ITQ-16 film, blue emission bands at around 446 and 462 nm are attributed to peroxy free radicals(≡SiO2), ultraviolet emissions ranging from 250 nm to 450 nm are suggested originating from a singlet-to-triplet transition of two-fold-coordinated Si and Ge, respectively. © 2016, Jilin University, The Editorial Department of Chemical Research in Chinese Universities and Springer-Verlag GmbH.

  19. Fabrication and spectroscopic studies on highly luminescent CdSe/CdS nanorod polymer composites

    NARCIS (Netherlands)

    Bomm, J.; Büchtemann, A.; Fiore, Angela; Manna, L.; Nelson, J.H.; Hill, D.; van Sark, W.G.J.H.M.

    2010-01-01

    Highly luminescent nanocomposites were prepared by incorporating CdSe/CdS core/shell nanorods into different polymer matrices. The resulting nanocomposites show high transparency of up to 93%. A photoluminescence quantum efficiency of 70% was obtained, with an optimum combination of nanorod (0.05 wt

  20. Modeling of photoluminescence in laser-based lighting systems

    Science.gov (United States)

    Chatzizyrli, Elisavet; Tinne, Nadine; Lachmayer, Roland; Neumann, Jörg; Kracht, Dietmar

    2017-12-01

    The development of laser-based lighting systems has been the latest step towards a revolution in illumination technology brought about by solid-state lighting. Laser-activated remote phosphor systems produce white light sources with significantly higher luminance than LEDs. The weak point of such systems is often considered to be the conversion element. The high-intensity exciting laser beam in combination with the limited thermal conductivity of ceramic phosphor materials leads to thermal quenching, the phenomenon in which the emission efficiency decreases as temperature rises. For this reason, the aim of the presented study is the modeling of remote phosphor systems in order to investigate their thermal limitations and to calculate the parameters for optimizing the efficiency of such systems. The common approach to simulate remote phosphor systems utilizes a combination of different tools such as ray tracing algorithms and wave optics tools for describing the incident and converted light, whereas the modeling of the conversion process itself, i.e. photoluminescence, in most cases is circumvented by using the absorption and emission spectra of the phosphor material. In this study, we describe the processes involved in luminescence quantum-mechanically using the single-configurational-coordinate diagram as well as the Franck-Condon principle and propose a simulation model that incorporates the temperature dependence of these processes. Following an increasing awareness of climate change and environmental issues, the development of ecologically friendly lighting systems featuring low power consumption and high luminous efficiency is imperative more than ever. The better understanding of laser-based lighting systems is an important step towards that aim as they may improve on LEDs in the near future.