Growth and temperature dependent photoluminescence of InGaAs quantum dot chains

International Nuclear Information System (INIS)

Yang, Haeyeon; Kim, Dong-Jun; Colton, John S.; Park, Tyler; Meyer, David; Jones, Aaron M.; Thalman, Scott; Smith, Dallas; Clark, Ken; Brown, Steve

2014-01-01

Highlights: • We examine the optical properties of novel quantum dot chains. • Study shows that platelets evolve into quantum dots during heating of the InGaAs platelets encapsulated with GaAs. • Single stack of quantum dots emits light at room temperature. • Quantum dots are of high quality, confirmed by cross-section TEM images and photoluminescence. • Light emission at room temperature weakens beyond the detection limit when the quantum dots form above the critical annealing temperature. - Abstract: We report a study of growth and photoluminescence from a single stack of MBE-grown In 0.4 Ga 0.6 As quantum dot chains. The InGaAs epilayers were grown at a low temperature so that the resulting surfaces remain flat with platelets even though their thicknesses exceed the critical thickness of the conventional Stranski–Krastanov growth mode. The flat InGaAs layers were then annealed at elevated temperatures to induce the formation of quantum dot chains. A reflection high energy electron diffraction study suggests that, when the annealing temperature is at or below 480 °C, the surface of growth front remains flat during the periods of annealing and growth of a 10 nm thick GaAs capping layer. Surprisingly, transmission electron microscopy images do indicate the formation of quantum dot chains, however, so the dot-chains in those samples may form from precursory platelets during the period of temperature ramping and subsequent capping with GaAs due to intermixing of group III elements. The optical emission from the quantum dot layer demonstrates that there is a critical annealing temperature of 480–500 °C above which the properties of the low temperature growth approach are lost, as the optical properties begin to resemble those of quantum dots produced by the conventional Stranski–Krastanov technique

Origin of low quantum efficiency of photoluminescence of InP/ZnS nanocrystals

International Nuclear Information System (INIS)

Shirazi, Roza; Kovacs, Andras; Dan Corell, Dennis; Gritti, Claudia; Thorseth, Anders; Dam-Hansen, Carsten; Michael Petersen, Paul; Kardynal, Beata

2014-01-01

In this paper, we study the origin of a strong wavelength dependence of the quantum efficiency of InP/ZnS nanocrystals. We find that while the average size of the nanocrystals increased by 50%, resulting in longer emission wavelength, the quantum efficiency drops more than one order of magnitude compared to the quantum efficiency of the small nanocrystals. By correlating this result with the time-resolved photoluminescence we find that the reduced photoluminescence efficiency is caused by a fast growing fraction of non-emissive nanocrystals while the quality of the nanocrystals that emit light is similar for all samples. Transmission electron microscopy reveals the polycrystalline nature of many of the large nanocrystals, pointing to the grain boundaries as one possible site for the photoluminescence quenching defects. -- Highlights: • We investigate drop of quantum efficiency of InP/ZnS nanocrystals emitting at longer wavelengths. • We correlate quantum efficiency measurements with time-resolved carrier dynamics. • We find that only a small fraction of larger nanocrystals is optically active

Origin of low quantum efficiency of photoluminescence of InP/ZnS nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Shirazi, Roza, E-mail: rozas@fotonik.dtu.dk [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); Kovacs, Andras [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grunberg Institute, Forschungszentrum Julich, 52425 Julich (Germany); Dan Corell, Dennis [Department of Photonics Engineering, Technical University of Denmark, Riso, Frederiksborgvej 399, 4000 Roskilde (Denmark); Gritti, Claudia [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); Thorseth, Anders; Dam-Hansen, Carsten; Michael Petersen, Paul [Department of Photonics Engineering, Technical University of Denmark, Riso, Frederiksborgvej 399, 4000 Roskilde (Denmark); Kardynal, Beata [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); PGI-9, Forschungszentrum Julich, JARA FIT, 52425 Julich (Germany)

2014-01-15

In this paper, we study the origin of a strong wavelength dependence of the quantum efficiency of InP/ZnS nanocrystals. We find that while the average size of the nanocrystals increased by 50%, resulting in longer emission wavelength, the quantum efficiency drops more than one order of magnitude compared to the quantum efficiency of the small nanocrystals. By correlating this result with the time-resolved photoluminescence we find that the reduced photoluminescence efficiency is caused by a fast growing fraction of non-emissive nanocrystals while the quality of the nanocrystals that emit light is similar for all samples. Transmission electron microscopy reveals the polycrystalline nature of many of the large nanocrystals, pointing to the grain boundaries as one possible site for the photoluminescence quenching defects. -- Highlights: • We investigate drop of quantum efficiency of InP/ZnS nanocrystals emitting at longer wavelengths. • We correlate quantum efficiency measurements with time-resolved carrier dynamics. • We find that only a small fraction of larger nanocrystals is optically active.

Highly photoluminescent MoO{sub x} quantum dots: Facile synthesis and application in off-on Pi sensing in lake water samples

Energy Technology Data Exchange (ETDEWEB)

Xiao, Sai Jin [Jiangxi Key Laboratory of Mass Spectrometry and Instrumentation, East China University of Technology (ECUT), Nanchang 330013 (China); School of Chemistry, Biology and Material Science, ECUT, Nanchang 330013 (China); Zhao, Xiao Jing; Zuo, Jun [School of Chemistry, Biology and Material Science, ECUT, Nanchang 330013 (China); Huang, Hai Qing [State Key Laboratory Breeding Base of Nuclear Resources and Environment, ECUT, Nanchang 330013 (China); Zhang, Li, E-mail: zhangli8@ncu.edu.cn [College of Chemistry, Nanchang University, Nanchang 330031 (China)

2016-02-04

Molybdenum oxide (MoO{sub x}) is a well-studied transition-metal semiconductor material, and has a wider band gap than MoS{sub 2} which makes it become a promising versatile probe in a variety of fields, such as gas sensor, catalysis, energy storage ect. However, few MoO{sub x} nanomaterials possessing photoluminescence have been reported until now, not to mention the application as photoluminescent probes. Herein, a one-pot method is developed for facile synthesis of highly photoluminescent MoO{sub x} quantum dots (MoO{sub x} QDs) in which commercial molybdenum disulfide powder and hydrogen peroxide (H{sub 2}O{sub 2}) are involved as the precursor and oxidant, respectively. Compared with current synthesis methods, the proposed one has the advantages of rapid, one-pot, easily prepared, environment friendly as well as strong photoluminescence. The obtained MoO{sub x} QDs is further utilized as an efficient photoluminescent probe, and a new off-on sensor has been constructed for phosphate (Pi) determination in complicated lake water samples, attributed to the fact that the binding affinity of Eu{sup 3+} ions to the oxygen atoms from Pi is much higher than that from the surface of MoO{sub x} QDs. Under the optimal conditions, a good linear relationship was found between the enhanced photoluminescence intensity and Pi concentration in the range of 0.1–160.0 μM with the detection limit of 56 nM (3σ/k). The first application of the photoluminescent MoO{sub x} nanomaterials for ion photochemical sensing will open the gate of employing MoO{sub x} nanomaterials as versatile probes in a variety of fields, such as chemi-/bio-sensor, cell imaging, biomedical and so on. - Highlights: • Though increasing effort has been devoted to MoO{sub x} nanomaterials synthesis, only a few reports mentioning its photoluminescence property are available, while even no evidence has shown its applications in chemical and biological sensing. • Herein, a one-pot method possessing the

Photoluminescence Enhancement of Silole-Capped Silicon Quantum Dots Based on Förster Resonance Energy Transfer.

Science.gov (United States)

Kim, Seongwoong; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae

2015-07-01

Photoluminescent porous silicon were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 650 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon quantum dots in porous silicon. HO-terminated red luminescent PS was obtained by an electrochemical treatment of fresh PS with the current of 150 mA for 60 seconds in water and sodium chloride. As-prepared PS was sonicated, fractured, and centrifuged in toluene solution to obtain photoluminescence silicon quantum dots. Dichlorotetraphenylsilole exhibiting an emission band at 520 nm was reacted with HO-terminated silicon quantum dots to give a silole-capped silicon quantum dots. The optical characterization of silole-derivatized silicon quantum dots was investigated by UV-vis and fluorescence spectrometer. The fluorescence emission efficiency of silole-capped silicon quantum dots was increased by about 2.5 times due to F6rster resonance energy transfer from silole moiety to silicon quantum dots.

Power-law photoluminescence decay in quantum dots

Czech Academy of Sciences Publication Activity Database

Král, Karel; Menšík, Miroslav

2013-01-01

Roč. 5, č. 6 (2013), s. 608-610 ISSN 2164-6627 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * indirect gap * photoluminescence * electron-phonon interaction * non-adiabatic Subject RIV: BM - Solid Matter Physics ; Magnetism; JA - Electronics ; Optoelectronics, Electrical Engineering (UMCH-V)

Excitation density dependence of the photoluminescence from CdxHg1-xTe multiple quantum wells

International Nuclear Information System (INIS)

Tonheim, C R; Selvig, E; Nicolas, S; Breivik, M; Haakenaasen, R; Gunnaes, A E

2008-01-01

A study of the photoluminescence from a four-period Cd x Hg 1-x Te multiple quantum well structure at 11 K as a function of excitation density is presented. High-resolution X-ray diffraction and transmission electron microscopy revealed that the quantum well structure is of high quality. This was supported by the narrow photoluminescence peak originating in the ground state electron - heavy hole transition, with a full width at half maximum of only 7.4 meV for an excitation density of 1.3 W/cm 2 . When the excitation density was increased from 1.3 to 23.4 W/cm 2 , the peak position was shifted toward higher energy by 2.6 meV and the full width at half maximum increased from 7.4 to 10.9 meV

Near-unity photoluminescence quantum yield in MoS2

KAUST Repository

Amani, Matin

2015-11-26

Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low.The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QYof 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude.The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a finalQYofmore than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

Near-unity photoluminescence quantum yield in MoS2

KAUST Repository

Amani, Matin; Lien, Der Hsien; Kiriya, Daisuke; Xiao, Jun; Azcatl, Angelica; Noh, Jiyoung; Madhvapathy, Surabhi R.; Addou, Rafik; Santosh, K. C.; Dubey, Madan; Cho, Kyeongjae; Wallace, Robert M.; Lee, Si Chen; He, Jr-Hau; Ager, Joel W.; Zhang, Xiang; Yablonovitch, Eli; Javey, Ali

2015-01-01

Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low.The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QYof 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude.The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a finalQYofmore than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

Near-unity photoluminescence quantum yield in MoS.sub.2

Science.gov (United States)

Amani, Matin; Lien, Der-Hsien; Kiriya, Daisuke; Bullock, James; Javey, Ali

2017-12-26

Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS.sub.2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS.sub.2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8.+-.0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

Using quantum dot photoluminescence for load detection

Science.gov (United States)

Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

2016-08-01

We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

Using quantum dot photoluminescence for load detection

Directory of Open Access Journals (Sweden)

M. Moebius

2016-08-01

Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

UV and air stability of high-efficiency photoluminescent silicon nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Yang, Jihua, E-mail: yangj@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liptak, Richard [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Ave, Terre Haute, IN 47803 (United States); Rowe, David; Wu, Jeslin [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Casey, James; Witker, David [Dow Corning Corporation, 2200 W. Salzburg Road, Midland, MI 48686 (United States); Campbell, Stephen A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Kortshagen, Uwe, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States)

2014-12-30

The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots

Czech Academy of Sciences Publication Activity Database

Neudert, K.; Trojánek, F.; Kuldová, Karla; Oswald, Jiří; Hospodková, Alice; Malý, P.

2009-01-01

Roč. 6, č. 4 (2009), 853-856 ISSN 1862-6351 R&D Projects: GA ČR GA202/06/0718 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * photoluminescence * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism

Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

Energy Technology Data Exchange (ETDEWEB)

Ananthakumar, S. [Crystal Growth Centre, Anna University, Chennai 600025 (India); Jayabalan, J., E-mail: jjaya@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Singh, Asha; Khan, Salahuddin [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Babu, S. Moorthy [Crystal Growth Centre, Anna University, Chennai 600025 (India); Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2016-01-15

The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a 'UCPL bright point' in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

International Nuclear Information System (INIS)

Ananthakumar, S.; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Babu, S. Moorthy; Chari, Rama

2016-01-01

The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a "UCPL bright point" in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

International Nuclear Information System (INIS)

Richter, D; Hafenbrak, R; Joens, K D; Schulz, W-M; Eichfelder, M; Rossbach, R; Jetter, M; Michler, P

2010-01-01

To achieve a low density of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.

Efficiency droop suppression of distance-engineered surface plasmon-coupled photoluminescence in GaN-based quantum well LEDs

Directory of Open Access Journals (Sweden)

Yufeng Li

2017-11-01

Full Text Available Ag coated microgroove with extreme large aspect-ratio of 500:1 was fabricated on p-GaN capping layer to investigate the coupling behavior between quantum wells and surface plasmon in highly spatial resolution. Significant photoluminescence enhancement was observed when the distance between Ag film and QWs was reduced from 220 nm to about 20 nm. A maximum enhancement ratio of 18-fold was achieved at the groove bottom where the surface plasmonic coupling was considered the strongest. Such enhancement ratio was found highly affected by the excitation power density. It also shows high correlation to the internal quantum efficiency as a function of coupling effect and a maximum Purcell Factor of 1.75 was estimated at maximum coupling effect, which matches number calculated independently from the time-resolved photoluminescence measurement. With such Purcell Factor, the efficiency was greatly enhanced and the droop was significantly suppressed.

Simple and greener synthesis of highly photoluminescence Mn{sup 2+}-doped ZnS quantum dots and its surface passivation mechanism

Energy Technology Data Exchange (ETDEWEB)

Wang, Yongbo; Liang, Xuhua; Ma, Xuan; Hu, Yahong [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Hu, Xiaoyun; Li, Xinghua [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Fan, Jun, E-mail: fanjun@nwu.edu.cn [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China)

2014-10-15

Graphical abstract: TEM and HRTEM (inset) images of the as-prepared Mn{sup 2+}-doped ZnS QDs and the passivation mechanism model of GSH-capped ZnS QDs (b). - Highlights: • Highly photoluminescent Mn{sup 2+}-doped ZnS quantum dots were synthesized by a simple synthetic method. • The effects of Mn{sup 2+} doping concentration, reaction time and temperature on PL intensity were investigated. • The mechanism of surface passivation was described. - Abstract: In this paper, we reported a simple synthetic method of highly photoluminescent (PL) and stable Mn{sup 2+}-doped ZnS quantum dots (QDs) with glutathione (GSH) as the capping molecule and focused on mechanism of the surface passivation of QDs. The Mn{sup 2+}-doped ZnS QDs that was synthesized in basic solution (pH 10) at 120 °C for 5 h exhibited blue trap-state emission around 418 nm and a strong orange-red emission at about 580 nm with an excitation wavelength of 330 nm. The optimum doping concentration is determined to be 1.5 at.%, and the present Mn{sup 2+}-doped ZnS QDs synthesized under the optimal reaction condition exhibited a quantum yield of 48%. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that the Mn{sup 2+}-doped ZnS QDs were 3–5 nm in size with a zinc blend structure. More importantly, the PL intensity and chemical stability can be improved using organic ligand modification strategies, it was found that GSH could passivate surface defects very efficiently by comparing and analyzing the results of the different organic ligands modification. The cadmium-free Mn{sup 2+}-doped ZnS QDs well-passivated with GSH as capping molecule acquired the advantages of strong PL and excellent chemical stability, which are important to QD applications.

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)

2012-01-15

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

International Nuclear Information System (INIS)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva

2012-01-01

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Quantum dots with indirect band gap: power-law photoluminescence decay

Czech Academy of Sciences Publication Activity Database

Král, Karel; Menšík, Miroslav

2014-01-01

Roč. 11, č. 5 (2014), s. 507-512 ISSN 1708-5284 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : photoluminescence * quantum dots * electron-phonon interaction * inter-valley deformation potential interaction * power-law decay Subject RIV: BM - Solid Matter Physics ; Magnetism

Excitation density dependence of the photoluminescence from Cd{sub x}Hg{sub 1-x}Te multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Tonheim, C R; Selvig, E; Nicolas, S; Breivik, M; Haakenaasen, R [Norwegian Defence Research Establishment, PO Box 25, N-2027 Kjeller (Norway); Gunnaes, A E [Department of Physics, University of Oslo, Boks 1048 Blindern, N-0316 Oslo (Norway)], E-mail: celin.tonheim@ffi.no

2008-03-15

A study of the photoluminescence from a four-period Cd{sub x}Hg{sub 1-x}Te multiple quantum well structure at 11 K as a function of excitation density is presented. High-resolution X-ray diffraction and transmission electron microscopy revealed that the quantum well structure is of high quality. This was supported by the narrow photoluminescence peak originating in the ground state electron - heavy hole transition, with a full width at half maximum of only 7.4 meV for an excitation density of 1.3 W/cm{sup 2}. When the excitation density was increased from 1.3 to 23.4 W/cm{sup 2}, the peak position was shifted toward higher energy by 2.6 meV and the full width at half maximum increased from 7.4 to 10.9 meV.

High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging.

Science.gov (United States)

Peng, Mingzeng; Li, Zhou; Liu, Caihong; Zheng, Qiang; Shi, Xieqing; Song, Ming; Zhang, Yang; Du, Shiyu; Zhai, Junyi; Wang, Zhong Lin

2015-03-24

A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.

High Photoluminescence Quantum Yields in Organic Semiconductor-Perovskite Composite Thin Films.

Science.gov (United States)

Longo, Giulia; La-Placa, Maria-Grazia; Sessolo, Michele; Bolink, Henk J

2017-10-09

One of the obstacles towards efficient radiative recombination in hybrid perovskites is a low exciton binding energy, typically in the orders of tens of meV. It has been shown that the use of electron-donor additives can lead to a substantial reduction of the non-radiative recombination in perovskite films. Herein, the approach using small molecules with semiconducting properties, which are candidates to be implemented in future optoelectronic devices, is presented. In particular, highly luminescent perovskite-organic semiconductor composite thin films have been developed, which can be processed from solution in a simple coating step. By tuning the relative concentration of methylammonium lead bromide (MAPbBr 3 ) and 9,9spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1), it is possible to achieve photoluminescent quantum yields (PLQYs) as high as 85 %. This is attributed to the dual functions of SPPO1 that limit the grain growth while passivating the perovskite surface. The electroluminescence of these materials was investigated by fabricating multilayer LEDs, where charge injection and transport was found to be severely hindered for the perovskite/SPPO1 material. This was alleviated by partially substituting SPPO1 with a hole-transporting material, 1,3-bis(N-carbazolyl)benzene (mCP), leading to bright electroluminescence. The potential of combining perovskite and organic semiconductors to prepare materials with improved properties opens new avenues for the preparation of simple lightemitting devices using perovskites as the emitter. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Crystal habit dependent quantum confined photoluminescence of zinc oxide nanostructures

International Nuclear Information System (INIS)

Arellano, Ian Harvey J.; Payawan, Leon Jr. M.; Sarmago, Roland V.

2008-01-01

Diverse zinc oxide crystal habits namely wire, rods, tubes, whiskers and tetrapods were synthesized via hydrothermal and carbothermal reduction routes. A vapor current induced regionalization in the carbothermal synthesis lead to the isolation of these crystal habits for characterization. The surface morphology of the nanostructures was analyzed via field emission scanning electron microscopy (FESEM). The morphology and crystallinity of the as-synthesized nanostructure architectural motifs were related to their photoluminescence (PL). The photoluminescence at 157 nm was taken using F2 excimer laser and a crystal habit dependent response was observed. X-ray diffraction (XRD) analyses were conducted to deduce the degree of crystallinity showing results consistent with the excitonic emission at the band edge and visible emission at the electron-hole recombination sites. The presence of minimal crystal defects which gave the green emission was supported by energy dispersive spectroscopy (EDS) data. Transmission spectroscopy for the tetrapods exhibited an interesting PL reduction associated with high-energy deep traps in the nanostructures. Furthermore, some intensity dependent characteristics were deduced indicating quantum confined properties of these nano structures. (author)

Tuning the Photoluminescence of Graphene Quantum Dots by Photochemical Doping with Nitrogen

Directory of Open Access Journals (Sweden)

Xiaofen Xu

2017-11-01

Full Text Available Nitrogen-doped graphene quantum dots (NGQDs were synthesized by irradiating graphene quantum dots (GQDs in an NH3 atmosphere. The photoluminescence (PL properties of the GQDs and the NGQDs samples were investigated. Compared with GQDs, a clear PL blue-shift of NGQDs could be achieved by regulating the irradiating time. The NGQDs obtained by irradiation of GQDs for 70 min had a high N content of 15.34 at % and a PL blue-shift of about 47 nm. This may be due to the fact that photochemical doping of GQDs with nitrogen can significantly enhance the contents of pyridine-like nitrogen, and also effectively decrease the contents of oxygen functional groups of NGQDs, thus leading to the observed obvious PL blue-shift.

Photoluminescence efficiency in AlGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Tamulaitis, G.; Mickevičius, J. [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Jurkevičius, J., E-mail: jonas.jurkevicius@ff.vu.lt [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Shur, M.S. [Department of ECE and CIE, Rensselaer Polytechnic Institute (United States); Shatalov, M.; Yang, J.; Gaska, R. [Sensor Electronic Technology, Inc. (United States)

2014-11-15

Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence of carrier delocalization. The delocalization at room temperature results predominantly in enhancement of bimolecular radiative recombination, while being favorable for enhancement of nonradiative recombination at low temperatures. Studies of stimulated emission confirmed the strong influence of carrier localization on droop.

Highly photoluminescent europium tetraphenylimidodiphosphinate ternary complexes with heteroaromatic co-ligands. Solution and solid state studies

Energy Technology Data Exchange (ETDEWEB)

Pietraszkiewicz, Marek, E-mail: mpietraszkiewicz@ichf.edu.pl [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw (Poland); Pietraszkiewicz, Oksana; Karpiuk, Jerzy; Majka, Alina [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw (Poland); Dutkiewicz, Grzegorz; Borowiak, Teresa [Adam Mickiewicz University, Faculty of Chemistry, Department of Crystallography, Grunwaldzka 6, 60-780 Poznań (Poland); Kaczmarek, Anna M. [L3–Luminescent Lanthanide Lab, f-element coordination chemistry, Ghent University, Department of Inorganic and Physical Chemistry, Krijgslaan 281, Building S3, 9000 Gent (Belgium); Van Deun, Rik, E-mail: rik.vandeun@ugent.be [L3–Luminescent Lanthanide Lab, f-element coordination chemistry, Ghent University, Department of Inorganic and Physical Chemistry, Krijgslaan 281, Building S3, 9000 Gent (Belgium)

2016-02-15

Tetraphenylimidodiphosphinate (tpip) forms neutral 3:1 complexes with lanthanide ions. These complexes can accommodate one ancillary planar heterocyclic ligand to complement their coordination sphere of Eu{sup 3+} to coordination number 8. Several co-ligands were tested to form new complexes: 1,10-phenanthroline, bathophenanthroline, 2,4,6-tris(2-pyridyl)-1,3,5-triazine, dipyrido[3,2-f:2′,3′-h]quinoxaline and 2,2′:6′,2′′-terpyridine. The addition of heterocyclic N,N-bidentate co-ligands to the coordination sphere results in a dramatic (by a factor of 45–50) luminescence enhancement of the parent Eu(tpip){sub 3}. The solid-state measurements confirmed that the ancillary ligands strongly increased the photoluminescence quantum yield (PLQY) of the investigated complexes. - Highlights: • We have disovered highly photoluminescent ternary Eu(III) complexes. • They consist of Eu(III) tetraphenylimidodiphosphinate, and planar heterocyclic ligands. • The increase in photoluminescence quantum yields in solution is enhanced up to 50 times in solution. • The solid-state photoluminescence exceeds 80% at room temperature.

Highly photoluminescent europium tetraphenylimidodiphosphinate ternary complexes with heteroaromatic co-ligands. Solution and solid state studies

International Nuclear Information System (INIS)

Pietraszkiewicz, Marek; Pietraszkiewicz, Oksana; Karpiuk, Jerzy; Majka, Alina; Dutkiewicz, Grzegorz; Borowiak, Teresa; Kaczmarek, Anna M.; Van Deun, Rik

2016-01-01

Tetraphenylimidodiphosphinate (tpip) forms neutral 3:1 complexes with lanthanide ions. These complexes can accommodate one ancillary planar heterocyclic ligand to complement their coordination sphere of Eu 3+ to coordination number 8. Several co-ligands were tested to form new complexes: 1,10-phenanthroline, bathophenanthroline, 2,4,6-tris(2-pyridyl)-1,3,5-triazine, dipyrido[3,2-f:2′,3′-h]quinoxaline and 2,2′:6′,2′′-terpyridine. The addition of heterocyclic N,N-bidentate co-ligands to the coordination sphere results in a dramatic (by a factor of 45–50) luminescence enhancement of the parent Eu(tpip) 3 . The solid-state measurements confirmed that the ancillary ligands strongly increased the photoluminescence quantum yield (PLQY) of the investigated complexes. - Highlights: • We have disovered highly photoluminescent ternary Eu(III) complexes. • They consist of Eu(III) tetraphenylimidodiphosphinate, and planar heterocyclic ligands. • The increase in photoluminescence quantum yields in solution is enhanced up to 50 times in solution. • The solid-state photoluminescence exceeds 80% at room temperature.

Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

Science.gov (United States)

Prosposito, P.; De Angelis, R.; De Matteis, F.; Hatami, F.; Masselink, W. T.; Zhang, H.; Casalboni, M.

2016-03-01

InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N2) and in solvent vapours of methanol, clorophorm, acetone and water were measured. The presence of vapors of clorophorm, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed.

Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

International Nuclear Information System (INIS)

Prosposito, P.; De Angelis, R.; De Matteis, F.; Casalboni, M.; Hatami, F.; Masselink, W.T.; Zhang, H.

2016-01-01

InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N 2 ) and in solvent vapours of methanol, chloroform, acetone and water were measured. The presence of vapors of chloroform, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed. (paper)

Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

Science.gov (United States)

Reshchikov, M. A.; Foussekis, M.; McNamara, J. D.; Behrends, A.; Bakin, A.; Waag, A.

2012-04-01

The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the ZnGa acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90% was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the ZnGa acceptors and free electrons were also estimated from the photoluminescence measurements.

Hydrothermal synthesis of two photoluminescent nitrogen-doped graphene quantum dots emitted green and khaki luminescence

International Nuclear Information System (INIS)

Zhu, Xiaohua; Zuo, Xiaoxi; Hu, Ruiping; Xiao, Xin; Liang, Yong; Nan, Junmin

2014-01-01

A simple and effective chemical synthesis of the photoluminescent nitrogen-doped graphene quantum dots (N-GQDs) biomaterial is reported. Using the hydrothermal treatment of graphene oxide (GO) in the presence of hydrogen peroxide (H 2 O 2 ) and ammonia, the N-GQDs are synthesized through H 2 O 2 exfoliating the GO into nanocrystals with lateral dimensions and ammonia passivating the generated active surface. Then, after a dialytic separation, two water-soluble N-GQDs with average size of about 2.1 nm/6.2 nm, which emit green/khaki luminescence and exhibit excitation dependent/independent photoluminescence (PL) behaviors, are obtained. In addition, it is also demonstrated that these two N-GQDs are stable over a broad pH range and have the upconversion PL property, showing this approach provides a simple and effective method to synthesize the functional N-GQDs. - Highlights: • Nitrogen-doped graphene quantum dots (N-GQDs) are prepared by hydrothermal routine. • Two N-GQDs with different size distribution emit green/khaki photoluminescence. • Two N-GQDs exhibit excitation-dependent/independent photoluminescence behaviors

Different approaches for sensing captopril based on functionalized graphene quantum dots as photoluminescent probe

Energy Technology Data Exchange (ETDEWEB)

Toloza, Carlos A.T.; Khan, Sarzamin; Silva, Renan L.D. [Department of Chemistry, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil); Romani, Eric C.; Freire, F.L. [Department of Physics, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil); Aucélio, Ricardo Q., E-mail: aucelior@puc-rio.br [Department of Chemistry, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil)

2016-11-15

The determination of captopril is proposed using graphene quantum dots produced by the pyrolysis of citric acid and glutathione (GSH-GQDs). Captopril induces both quenching and spectral red-shifting in the photoluminescence from aqueous dispersions of GSH-GQDs. By employing Fe{sup 3+} as mediator (that enables signal quenching of GSH-GQDs), the presence of captopril restored the photoluminescence of quantum dots. Under optimized experimental conditions, the signal quenching from the GSH-GQDs as function of the concentration of captopril showed a linear response range covering three orders of magnitude (10{sup −6} to 10{sup −4} mol L{sup −1}). The proposed approaches were tested by determining captopril in simulated samples and in commercial pharmaceutical formulations. The measurement of either the spectral shifting observed of the GSH-GQDs probe or the photoluminescence switch on/off using GQDs-GSH-Fe{sup 3+} resulted in satisfactory recoveries of captopril, showing the quantitative sensing potential.

Dewetting-Induced Photoluminescent Enhancement of Poly(lauryl methacrylate)/Quantum Dot Thin Films.

Science.gov (United States)

Geldmeier, Jeffrey; Rile, Lexy; Yoon, Young Jun; Jung, Jaehan; Lin, Zhiqun; Tsukruk, Vladimir V

2017-12-19

A new method for enhancing photoluminescence from quantum dot (QD)/polymer nanocomposite films is proposed. Poly(lauryl methacrylate) (PLMA) thin films containing embedded QDs are intentionally allowed to undergo dewetting on substrates by exposure to a nonsolvent vapor. After controlled dewetting, films exhibited typical dewetting morphologies with increased amounts of scattering that served to outcouple photoluminescence from the film and reduce internal light propagation within the film. Up to a 5-fold enhancement of the film emission was achieved depending on material factors such as the initial film thickness and QD concentration within the film. An increase in initial film thickness was shown to increase the dewetted maximum feature size and its characteristic length until a critical thickness was reached where dewetting became inhibited. A unique light exposure-based photopatterning method is also presented for the creation of high contrast emissive patterns as guided by spatially controlled dewetting.

Detection of CdSe quantum dot photoluminescence for security label on paper

Energy Technology Data Exchange (ETDEWEB)

Isnaeni,, E-mail: isnaeni@lipi.go.id; Sugiarto, Iyon Titok [Research Center for Physics, Indonesian Institute of Science, Building 442 Puspiptek Serpong, South Tangerang, Banten, Indonesia 15314 (Indonesia); Bilqis, Ratu; Suseno, Jatmiko Endro [Department of Physics, Diponegoro University, Jl. Prof. Soedarto, Tembalang, Semarang, Indonesia 50275 (Indonesia)

2016-02-08

CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program to reveal quantum dot pattern stamp having the word ’RAHASIA’. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.

Power-law photoluminescence decay in indirect gap quantum dots

Czech Academy of Sciences Publication Activity Database

Menšík, Miroslav; Král, Karel

2013-01-01

Roč. 111, November (2013), s. 170-174 ISSN 0167-9317 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12186; GA MŠk LH12236; GA ČR(CZ) GAP205/10/2280 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : quantum dots * indirect gap transition * power-law photoluminescence decay Subject RIV: BM - Solid Matter Physics ; Magnetism; BE - Theoretical Physics (FZU-D) Impact factor: 1.338, year: 2013

Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots

Science.gov (United States)

Maliya; Aierken, Abuduwayiti; Li, Yudong; Zhou, Dong; Zhao, Xiaofan; Guo, Qi; Liu, Chaoming

2018-03-01

We investigate the effects of 1.0MeV electron beam irradiation on the photoluminescence of self-assembled InAs/GaAs quantum dots. After irradiation doses up to 1×1016e-/cm2 , photoluminescence of all samples was degraded dramatically and some additional radiation-induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low electron doses under different photo-injection condition in two samples, are also noticed. Different energy shift was observed in two samples with different Quantum Dot sizes. We attribute this remarkable phenomenon to combination of stress relaxation induced red-shift and In-Ga intermixing caused blue-shift.

Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

Energy Technology Data Exchange (ETDEWEB)

Joo, Jinmyoung [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Biomedical Engineering Research Center, Asan Institute for Life Sciences, Asan Medical Center, University of Ulsan College of Medicine, Seoul 05505 (Korea, Republic of); Defforge, Thomas; Gautier, Gael, E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Universite Francois Rabelais de Tours, CNRS CEA, INSA-CVL, GREMAN UMR 7347, 37071 Tours Cedex 2 (France); Loni, Armando [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Kim, Dokyoung; Sailor, Michael J., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Li, Z. Y. [Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Canham, Leigh T., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

2016-04-11

The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals (<5 nm), pore collapse and morphological changes within the nanocrystalline structure after common drying processes can affect PL efficiency. We report the highly beneficial effects of using SCD for preparation of photoluminescent pSi powders. Significantly higher surface areas and pore volumes have been realized by utilizing SCD (with CO{sub 2} solvent) instead of air-drying. Correspondingly, the pSi powders better retain the porous structure and the nano-sized silicon grains, thus minimizing the formation of non-radiative defects during liquid evaporation (air drying). The SCD process also minimizes capillary-stress induced contact of neighboring nanocrystals, resulting in lower exciton migration levels within the network. A significant enhancement of the PL quantum yield (>32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

Self-assembly and photoluminescence evolution of hydrophilic and hydrophobic quantum dots in sol–gel processes

Energy Technology Data Exchange (ETDEWEB)

Yang, Ping, E-mail: mse_yangp@ujn.edu.cn [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China); Matras-Postolek, Katarzyna [Faculty of Chemical Engineering and Technology, Cracow University of Technology, Krakow 31-155 (Poland); Song, Xueling; Zheng, Yan; Liu, Yumeng; Ding, Kun; Nie, Shijie [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China)

2015-10-15

Graphical abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were assembled into various morphologies including chain, hollow spheres, fibers, and ring structures through sol–gel processes. The PL properties during assembly as investigated. - Highlights: • Highly luminescent quantum dots (QDs) were synthesized from several ligands. • The evolution of PL in self-assembly via sol–gel processes was investigated. • CdTe QDs were assembled into a chain by controlling hydrolysis and condensation reactions. • Hollow spheres, fibers, and ring structures were created via CdSe/ZnS QDs in sol–gel processes. - Abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were synthesized from several ligands to investigate the PL evolution in QD self-assembly via sol–gel processes. After ligand exchange, CdTe QDs were assembled into a chain by controlling the hydrolysis and condensation reaction of 3-mercaptopropyl-trimethoxysilane. The chain was then coated with a SiO{sub 2} shell from tetraethyl orthosilicate (TEOS). Hollow spheres, fibers, and ring structures were created from CdSe/ZnS QDs via various sol–gel processes. CdTe QDs revealed red-shifted and narrowed PL spectrum after assembly compared with their initial one. In contrast, the red-shift of PL spectra of CdSe/ZnS QDs is small. By optimizing experimental conditions, SiO{sub 2} spheres with multiple CdSe/ZnS QDs were fabricated using TEOS and MPS. The QDs in these SiO{sub 2} spheres retained their initial PL properties. This result is useful for application because of their high stability and high PL efficiency of 33%.

Magnetic enhancement of photoluminescence from blue-luminescent graphene quantum dots

Science.gov (United States)

Chen, Qi; Shi, Chentian; Zhang, Chunfeng; Pu, Songyang; Wang, Rui; Wu, Xuewei; Wang, Xiaoyong; Xue, Fei; Pan, Dengyu; Xiao, Min

2016-02-01

Graphene quantum-dots (GQDs) have been predicted and demonstrated with fascinating optical and magnetic properties. However, the magnetic effect on the optical properties remains experimentally unexplored. Here, we conduct a magneto-photoluminescence study on the blue-luminescence GQDs at cryogenic temperatures with magnetic field up to 10 T. When the magnetic field is applied, a remarkable enhancement of photoluminescence emission has been observed together with an insignificant change in circular polarization. The results have been well explained by the scenario of magnetic-field-controlled singlet-triplet mixing in GQDs owing to the Zeeman splitting of triplet states, which is further verified by temperature-dependent experiments. This work uncovers the pivotal role of intersystem crossing in GQDs, which is instrumental for their potential applications such as light-emitting diodes, photodynamic therapy, and spintronic devices.

Photoluminescence of a single InAs/AlAs quantum dot

International Nuclear Information System (INIS)

Shamirzaev, T.S.; Zhuravlev, K.S.; Larsson, M.; Holtz, P.O.

2008-01-01

Micro-photoluminescence (μ-PL) of a simple InAs/AlAs quantum dot (QD) has been studied. It has been found that the μ-PL emission related to the recombination in a single QD is strongly broadened probably due to spectral diffusion. Emissions related to the recombination of biexcitons and excitons occupying excited levels of the QD are observed in μ-PL spectra at high excitation power densities. A red shift of the μ-PL emissions related to recombination of excitons in the ground and excited levels of the QD with increasing excitation power gives clear evidence for type I alignment of the InAs/AlAs QD. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Temperature-dependent photoluminescence study of InP/ZnS quantum dots

Science.gov (United States)

Thuy Pham, Thi; Tran, Thi Kim Chi; Liem Nguyen, Quang

2011-06-01

This paper reports on the temperature-dependent photoluminescence of InP/ZnS quantum dots under 532 nm excitation, which is above the InP transition energy but well below that of ZnS. The overall photoluminescence spectra show two spectral components. The higher-energy one (named X) is assigned to originate from the excitonic transition; while the low-energy spectral component (named I) is normally interpreted as resulting from lattice imperfections in the crystalline structure of InP/ZnS quantum dots (QDs). Peak positions of both the X and I emissions vary similarly with increasing temperature and the same as the InP bandgap narrowing with temperature. In the temperature range from 15 to 80 K, the ratio of the integrated intensity from the X and the I emissions decreases gradually and then this ratio increases fast at temperatures higher than 80 K. This could result from a population of charge carriers in the lattice imperfection states at a temperature below 80 K to increase the I emission but then with these charge carriers being released to contribute to the X emission.

Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kang, Zhitao [Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Banishev, Alexandr A.; Christensen, James; Dlott, Dana D. [School of Chemical Sciences and Fredrick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N., E-mail: naresh.thadhani@mse.gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Xiao, Pan [LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); Zhou, Min [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States)

2016-07-28

The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

International Nuclear Information System (INIS)

Kang, Zhitao; Banishev, Alexandr A.; Christensen, James; Dlott, Dana D.; Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N.; Xiao, Pan; Zhou, Min

2016-01-01

The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

Energy Technology Data Exchange (ETDEWEB)

Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn [Engineering Product Development Pillar (EPD), Singapore University of Technology & Design (SUTD), 8 Somapah Road, Singapore 487372 (Singapore); Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Mind Star (Beijing) Technology Co., Ltd., Zhongguancun South Street, Haidian District, No. 45 Hing Fat Building 1001, Beijing 100872 (China); Liu, Zhiqiang, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Tian, Ying Dong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Wang, Guohong [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, Zi-Hui, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn [Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401 (China)

2016-04-14

The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well band profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.

Photoluminescence intermittency of semiconductor quantum dots in dielectric environments

Energy Technology Data Exchange (ETDEWEB)

Isaac, A.

2006-08-11

The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)

Violet-to-Blue Gain and Lasing from Colloidal CdS Nanoplatelets: Low-Threshold Stimulated Emission Despite Low Photoluminescence Quantum Yield

Energy Technology Data Exchange (ETDEWEB)

Diroll, Benjamin T.; Talapin, Dmitri V.; Schaller, Richard D.

2017-02-13

Amplified spontaneous emission (ASE) and lasing from solution-processed materials are demonstrated in the challenging violet-to-blue (430–490 nm) spectral region for colloidal nanoplatelets of CdS and newly synthesized core/shell CdS/ZnS nanoplatelets. Despite modest band-edge photoluminescence quantum yields of 2% or less for single excitons, which we show results from hole trapping, the samples exhibit low ASE thresholds. Furthermore, four-monolayer CdS samples show ASE at shorter wavelengths than any reported film of colloidal quantum-confined material. This work underlines that low quantum yields for single excitons do not necessarily lead to a poor gain medium. The low ASE thresholds originate from negligible dispersion in thickness, large absorption cross sections of 2.8 × 10–14 cm–2, and rather slow (150 to 300 ps) biexciton recombination. We show that under higher-fluence excitation, ASE can kinetically outcompete hole trapping. Using nanoplatelets as the gain medium, lasing is observed in a linear optical cavity. This work confirms the fundamental advantages of colloidal quantum well structures as gain media, even in the absence of high photoluminescence efficiency.

Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings.

Science.gov (United States)

Abbarchi, Marco; Cavigli, Lucia; Somaschini, Claudio; Bietti, Sergio; Gurioli, Massimo; Vinattieri, Anna; Sanguinetti, Stefano

2011-10-31

A systematic optical study, including micro, ensemble and time resolved photoluminescence of GaAs/AlGaAs triple concentric quantum rings, self-assembled via droplet epitaxy, is presented. Clear emission from localized states belonging to the ring structures is reported. The triple rings show a fast decay dynamics, around 40 ps, which is expected to be useful for ultrafast optical switching applications.

Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

Energy Technology Data Exchange (ETDEWEB)

Alejo, T. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Paulo, Pedro M.R. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Merchán, M.D. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Garcia-Fernandez, Emilio; Costa, Sílvia M.B. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Velázquez, M.M., E-mail: mvsal@usal.es [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain)

2017-03-15

Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

International Nuclear Information System (INIS)

Alejo, T.; Paulo, Pedro M.R.; Merchán, M.D.; Garcia-Fernandez, Emilio; Costa, Sílvia M.B.; Velázquez, M.M.

2017-01-01

Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

Energy Technology Data Exchange (ETDEWEB)

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Takabayashi, K.; Kamiya, I. [Quantum Interface Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan); Sukrittanon, S. [Material Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Pan, J. L.; Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2014-10-27

Self-assembled dilute nitride InNP quantum dots (QDs) in GaP matrix grown under the Stranski-Krastanov mode by gas-source molecular beam epitaxy are studied. The N-related localized states inside the InNP QDs provide a spatially direct recombination channel, in contrast to the spatially indirect channel through the strained In(N)P QDs/GaP interface states. The N incorporation into InP QDs therefore causes a blueshift and double-peak features in photoluminescence, which are not observed in other dilute nitride materials.

Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

International Nuclear Information System (INIS)

Kashtiban, R J; Bangert, U; Harvey, A J; Sherliker, B; Halsall, M P

2010-01-01

InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation.

On the acceptor-related photoluminescence spectra of GaAs quantum-wire microcrystals: A model calculation

International Nuclear Information System (INIS)

Oliveira, L.E.; Porras Montenegro, N.; Latge, A.

1992-07-01

The acceptor-related photoluminescence spectrum of a GaAs quantum-wire microcrystal is theoretically investigated via a model calculation within the effective-mass approximation, with the acceptor envelope wave functions and binding energies calculated through a variational procedure. Typical theoretical photoluminescence spectra show two peaks associated to transitions from the n = 1 conduction subband electron gas to acceptors at the on-center and on-edge positions in the wire in good agreement with the recent experimental results by Hirum et al. (Appl. Phys. Lett. 59, 431 (1991)). (author). 14 refs, 3 figs

High-amplitude THz and GHz strain waves, generated by ultrafast screening of piezoelectric fields in InGaN/GaN multiple quantum wells

DEFF Research Database (Denmark)

Porte, Henrik; van Capel, P.J.S.; Turchinovich, Dmitry

2010-01-01

Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening.......Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening....

Green and fast synthesis of amino-functionalized graphene quantum dots with deep blue photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Blanco, E., E-mail: eduardo.blanco@uca.es; Blanco, G.; Gonzalez-Leal, J. M.; Barrera, M. C.; Domínguez, M.; Ramirez-del-Solar, M. [University of Cádiz, Institute of Electron Microscopy and Materials (Spain)

2015-05-15

Graphene quantum dots (GQDs) were prepared using a top-down approach with a green microwave-assisted hydrothermal synthesis from ultrathin graphite, previously ultrasound delaminated. Results obtained by transmission electron microscopy and atomic force microscopy indicate that the so-fabricated GQDs are plates with 6 nm of average diameter, mostly single- or bi-layered. Photoluminescence characterization shows that the strongest emission occurs at 410–415 nm wavelength when the samples are excited at 310–320 nm wavelength. In addition to these down-conversion features, GQDs also exhibit up-conversion photoluminescence when excited in the range 560–800 nm wavelength, with broad emission peaks at 410–450 nm wavelength. Analysis of X-ray photoelectron spectroscopy measurements indicates a higher proportion of C–C sp{sup 2} than sp{sup 3} bonds, with the sp{sup 3} ones mainly located at the GQD surfaces. Also evidences of C–O and C–N bonds at the GQD surface have been observed. The combination of these results with Raman and ultraviolet–visible absorption experiments allows envisaging the GQDs to be composed of amino-functionalized sp{sup 2} islands with a high degree of surface oxidation. This would explain the photoluminescent properties observed in the samples under study. The combined up- and down-conversion photoluminescence processes would made these GQDs a powerful energy-transfer component in GQDs–TiO{sub 2} nanocomposite systems, which could be used in photocatalyst devices with superior performance compared to simple TiO{sub 2} systems.

Plasmon resonance-induced photoluminescence enhancement of CdTe/Cds quantum dots thin films

Energy Technology Data Exchange (ETDEWEB)

Wang, Hongyu [Nanjing University of Posts and Telecommunications, Nanjing 210003 (China); National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Wu, Yangqing; Xu, Jun; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

2016-11-30

Highlights: • CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated. • PL intensity of the quantum dots films was enhanced due to Au nanorods. • Internal quantum efficiency increased due to localized surface plasmon resonance. • The lifetimes of quantum dots films decreased after interaction with Au nano-rods. - Abstract: CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated on planar Si substrates. The optical properties of all samples were investigated and the corresponding simulations were studied. It was found that the photoluminescence intensity of the CdTe/CdS quantum dots films was enhanced about 9-fold after the incorporation of Au nano-rods, the internal quantum efficiency increased from 24.3% to 35.2% due to the localized surface plasmon resonance. The time-resolved luminescence decay curves showed that the lifetimes of CdTe/CdS quantum dots films decreased to 2.8 ns after interaction with Au nano-rods. The results of finite-difference time-domain simulation indicated that Au nano-rods induced the localization of electric field, which enhanced the PL intensity of quantum dots films in the vicinity of Au nano-rods.

Chemically modulated graphene quantum dot for tuning the photoluminescence as novel sensory probe

Science.gov (United States)

Hwang, Eunhee; Hwang, Hee Min; Shin, Yonghun; Yoon, Yeoheung; Lee, Hanleem; Yang, Junghee; Bak, Sora; Lee, Hyoyoung

2016-12-01

A band gap tuning of environmental-friendly graphene quantum dot (GQD) becomes a keen interest for novel applications such as photoluminescence (PL) sensor. Here, for tuning the band gap of GQD, a hexafluorohydroxypropanyl benzene (HFHPB) group acted as a receptor of a chemical warfare agent was chemically attached on the GQD via the diazonium coupling reaction of HFHPB diazonium salt, providing new HFHPB-GQD material. With a help of the electron withdrawing HFHPB group, the energy band gap of the HFHPB-GQD was widened and its PL decay life time decreased. As designed, after addition of dimethyl methyl phosphonate (DMMP), the PL intensity of HFHPB-GQD sensor sharply increased up to approximately 200% through a hydrogen bond with DMMP. The fast response and short recovery time was proven by quartz crystal microbalance (QCM) analysis. This HFHPB-GQD sensor shows highly sensitive to DMMP in comparison with GQD sensor without HFHPB and graphene. In addition, the HFHPB-GQD sensor showed high selectivity only to the phosphonate functional group among many other analytes and also stable enough for real device applications. Thus, the tuning of the band gap of the photoluminescent GQDs may open up new promising strategies for the molecular detection of target substrates.

Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot

Science.gov (United States)

Ware, M. E.; Stinaff, E. A.; Gammon, D.; Doty, M. F.; Bracker, A. S.; Gershoni, D.; Korenev, V. L.; Bădescu, Ş. C.; Lyanda-Geller, Y.; Reinecke, T. L.

2005-10-01

We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge-tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wave functions through asymmetric e-e and e-h exchange interactions.

Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

DEFF Research Database (Denmark)

Steffensen, O. M.; Birkedal, Dan; Hanberg, J.

1995-01-01

The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0...

Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Energy Technology Data Exchange (ETDEWEB)

Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

2016-08-29

Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

Science.gov (United States)

Netzel, C.; Knauer, A.; Weyers, M.

2012-12-01

We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ = 320-350 nm) by temperature dependent photoluminescence. Low indium content in AlInGaN structures causes a significant intensity increase by change of the polarization of the emitted light. Polarization changes from E ⊥ c to E ‖ c with increasing aluminum content. It switches back to E ⊥ c with the incorporation of indium. The polarization degree decreases with temperature. This temperature dependence can corrupt internal quantum efficiency determination by temperature dependent photoluminescence.

Photoluminescence properties of a novel conjugate of water-soluble CdTe quantum dots to guanine

Energy Technology Data Exchange (ETDEWEB)

Feng Xuejiao [North-East Normal University, Changchun 130024 (China); Shang, Qingkun, E-mail: shangqk995@nenu.edu.c [North-East Normal University, Changchun 130024 (China); Liu Hongjian [Relia Diagnostic Systems, Burlingame, CA 94010 (United States); Wang Wenlan; Wang Zhidan; Liu Junyu [North-East Normal University, Changchun 130024 (China)

2010-04-15

A novel conjugate of water-soluble CdTe quantum dots to a small biomolecule guanine has been obtained in aqueous phase. The photoluminescence property and the stability of the conjugate increased comparing to CdTe QDs. The interaction between CdTe QDs and guanine was studied by TEM, fluorescence microscope and photoluminescence (PL), IR, UV-Vis spectra. The effects of reflux time, pH value, ionic strength, and the ratio of CdTe QDs to guanine on the photoluminescence properties of conjugate were investigated in detail. The results show that guanine has a great influence on both the photoluminescence property and stability of thioglycolic acid-stabilized CdTe QDs. The formation of coordination and hydrogen bond between guanine molecules and CdTe including thioglycolic acid on its surface may effectively enhance the PL intensity and stability of CdTe QDs. The maximum PL intensity of the conjugate was obtained on the condition with lower ionic strength, less than 30 min reflux time, neutral pH value and 6/1 as molar ratio of guanine to CdTe.

High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method.

Science.gov (United States)

Yang, Weimin; Yang, Huafang; Ding, Wenhao; Zhang, Bing; Zhang, Le; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

2016-11-01

Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor. Copyright © 2016 Elsevier B.V. All rights reserved.

Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

International Nuclear Information System (INIS)

Isnaeni,; Yulianto, Nursidik; Suliyanti, Maria Margaretha

2016-01-01

We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

Energy Technology Data Exchange (ETDEWEB)

Isnaeni,, E-mail: isnaeni@lipi.go.id; Yulianto, Nursidik; Suliyanti, Maria Margaretha [Research Center for Physics, Indonesian Institute of Sciences, Building 442, Kawasan Puspiptek, South Tangerang,Banten 15314 Indonesia (Indonesia)

2016-03-11

We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

Quantification of thyroxine by the selective photoluminescence quenching of L-cysteine–ZnS quantum dots in aqueous solution containing hexadecyltrimethylammonium bromide

International Nuclear Information System (INIS)

Khan, Sarzamin; Carneiro, Leonardo S.A.; Romani, Eric C.; Larrudé, Dunieskys G.; Aucelio, Ricardo Q.

2014-01-01

The determination of L-thyroxine is proposed based on the photoluminescence quenching effect caused on the L-cysteine modified ZnS quantum dots (L-cysteine ZnS QDs) aqueous dispersion. Under optimum conditions, the analytical response followed a Stern–Volmer model and the experimental conditions were adjusted to enable a robust and reproducible photoluminescence signal. The linear response observed in the quantum dots aqueous dispersion covered the L-thyroxine concentration from the LOQ (2.0×10 −8 mol L −1 ) to 4.0×10 −6 mol L −1 . The approach was tested in the determination of L-thyroxine in pharmaceutical formulations used to treat patients with thyroid gland disorder. The percent recoveries in controlled samples were between 93.3 and 103%. Analyte fortified saliva was also evaluated as a possible sample for L-thyroxine monitoring of a patient under treatment. It was identified a static type of photoluminescence quenching caused by L-thyroxine. - Highlights: • L-cysteine ZnS QDs were used as a photoluminescent probe to detect L-thyroxine. • Intensity of probe decreases following a Stern–Volmer model. • The method can detect down ng L −1 levels of L-thyroxine in the probe dispersion. • Method was used to determinate of L-thyroxine in saliva and in pharmaceuticals. • Mechanism of interaction between L-thyroxine and quantum dots was studied

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

Science.gov (United States)

Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

2017-07-24

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

Anti-Stokes Luminescence in High Quality Quantum Wells

Science.gov (United States)

Vinattieri, A.; Bogani, F.; Miotto, A.; Ceccherini, S.

1997-11-01

We present a detailed investigation of the anti-Stokes (AS) luminescence which originates from exciton recombination when below gap excitation is used, in a set of high quality quantum well structures. We observe strong excitonic resonances in the AS signal as measured from photoluminescence and photoluminescence excitation spectra. We demonstrate that neither the electromagnetic coupling between the wells nor the morphological disorder can explain this up-conversion effect. Time-resolved luminescence data after ps excitation and fs correlation spectroscopy results provide clear evidence of the occurrence of a two-step absorption which is assisted by the exciton population resonantly excited by the first photon.

Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells

International Nuclear Information System (INIS)

Almokhtar, Mohamed; Emura, Shuichi; Koide, Akihiro; Fujikawa, Takashi; Asahi, Hajime

2015-01-01

Highlights: • We grew Gd-doped GaN multi-quantum wells (MQWs) with quantum layer thickness of one nm by MBE. • The X-ray absorption near edge structure spectra observed at Gd LIII-edge indicate a nitrogen vacancy adjacent to Gd substituting the Ga ion in Gd-doped GaN MQW. • The photoluminescence of the samples is discussed considering the formation of a Gd 3+ :Nitrogen-vacancy complex. • A model is presented considering exciton-polaron formation trapped in defect sites around the Gd 3+ :N-vacancy complex in Gd-doped GaN MQWs. - Abstract: The photoluminescence of Gd-doped GaN multi-quantum wells (MQWs) is presented and discussed considering the formation of a Gd 3+ :Nitrogen-vacancy (N-vacancy) complex. A lower energy photoluminescence peak was observed for the Gd-doped GaN MQW sample with respect to the main peak assigned to a neutral donor bound exciton (D 0 X) of the undoped GaN MQW sample. The X-ray absorption near edge structure spectrum observed at Gd L III -edge indicates a nitrogen vacancy adjacent to the Gd substituting the Ga ion in Gd-doped GaN MQW sample. Local stresses around the Gd dopants in Gd-doped GaN matrix generated due to the larger diameter of the Gd 3+ ion with respect to the Ga 3+ ion can be relieved by the creation of vacancies. The lower formation energy of N-vacancies in GaN matrix introduce them as a preferred candidate to relieve the generated stresses. A Gd 3+ :N-vacancy complex consisting of a Gd 3+ ion and the created nitrogen vacancy adjacent to the Gd 3+ dopant is likely to form in GaN:Gd matrix. The lower photoluminescence peak energy observed in the Gd-doped GaN MQW sample is assigned to the recombination of an exciton captured at the Gd 3+ :N-vacancy complex forming a small polaron-like state. A model is presented considering the small exciton-polaron population in defect sites captured around the Gd 3+ ions in the Gd-doped GaN

Quantification of thyroxine by the selective photoluminescence quenching of L-cysteine–ZnS quantum dots in aqueous solution containing hexadecyltrimethylammonium bromide

Energy Technology Data Exchange (ETDEWEB)

Khan, Sarzamin; Carneiro, Leonardo S.A. [Chemistry Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro-RJ (Brazil); Romani, Eric C.; Larrudé, Dunieskys G. [Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900, Rio de Janeiro-RJ (Brazil); Aucelio, Ricardo Q., E-mail: aucelior@puc-rio.br [Chemistry Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro-RJ (Brazil)

2014-12-15

The determination of L-thyroxine is proposed based on the photoluminescence quenching effect caused on the L-cysteine modified ZnS quantum dots (L-cysteine ZnS QDs) aqueous dispersion. Under optimum conditions, the analytical response followed a Stern–Volmer model and the experimental conditions were adjusted to enable a robust and reproducible photoluminescence signal. The linear response observed in the quantum dots aqueous dispersion covered the L-thyroxine concentration from the LOQ (2.0×10{sup −8} mol L{sup −1}) to 4.0×10{sup −6} mol L{sup −1}. The approach was tested in the determination of L-thyroxine in pharmaceutical formulations used to treat patients with thyroid gland disorder. The percent recoveries in controlled samples were between 93.3 and 103%. Analyte fortified saliva was also evaluated as a possible sample for L-thyroxine monitoring of a patient under treatment. It was identified a static type of photoluminescence quenching caused by L-thyroxine. - Highlights: • L-cysteine ZnS QDs were used as a photoluminescent probe to detect L-thyroxine. • Intensity of probe decreases following a Stern–Volmer model. • The method can detect down ng L{sup −1} levels of L-thyroxine in the probe dispersion. • Method was used to determinate of L-thyroxine in saliva and in pharmaceuticals. • Mechanism of interaction between L-thyroxine and quantum dots was studied.

Excitation dependence of photoluminescence in silicon quantum dots

International Nuclear Information System (INIS)

Wen Xiaoming; Lap Van Dao; Hannaford, Peter; Cho, E-C; Cho, Young H; Green, Martin A

2007-01-01

We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron-hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron-hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

Directory of Open Access Journals (Sweden)

Qi Wang

2013-07-01

Full Text Available In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM of only 29.5 meV. In addition, a slight blue-shift (∼18 meV of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%, the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.

Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

Science.gov (United States)

Segura, J.; Garro, N.; Cantarero, A.; Miguel-Sánchez, J.; Guzmán, A.; Hierro, A.

2007-04-01

We investigate the effects of electron and hole localization in the emission of a GaInNAs/GaAs single quantum well at low temperatures. Photoluminescence measurements varying the excitation density and under magnetic fields up to 14 T have been carried out. The results indicate that electrons are strongly localized in these systems due to small fluctuations in the nitrogen content of the quaternary alloy. The low linear diamagnetic shift of the emission points out the weakness of the Coulomb correlation between electrons and holes and suggests an additional partial localization of the holes.

Fluorescent porous silicon biological probes with high quantum efficiency and stability.

Science.gov (United States)

Tu, Chang-Ching; Chou, Ying-Nien; Hung, Hsiang-Chieh; Wu, Jingda; Jiang, Shaoyi; Lin, Lih Y

2014-12-01

We demonstrate porous silicon biological probes as a stable and non-toxic alternative to organic dyes or cadmium-containing quantum dots for imaging and sensing applications. The fluorescent silicon quantum dots which are embedded on the porous silicon surface are passivated with carboxyl-terminated ligands through stable Si-C covalent bonds. The porous silicon bio-probes have shown photoluminescence quantum yield around 50% under near-UV excitation, with high photochemical and thermal stability. The bio-probes can be efficiently conjugated with antibodies, which is confirmed by a standard enzyme-linked immunosorbent assay (ELISA) method.

High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

OpenAIRE

Carolin M. Sutter-Fella Yanbo Li Matin Amani Joel W. Ager III Francesca M. Toma; Eli Yablonovitch Ian D. Sharp and Ali Javey

2016-01-01

Hybrid organic–inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low cost solution processability. Here we present a two step low pressure vapor assisted solution process to grow high quality homogeneous CH3NH3PbI3–xBrx perovskite films over the full band gap range of 1.6–2.3 eV. Photoluminescence light in versus light out charac...

Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

Science.gov (United States)

Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

High-resolution photoluminescence studies of single semiconductor quantum dots

DEFF Research Database (Denmark)

Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

2000-01-01

Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...

Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence

DEFF Research Database (Denmark)

Fadil, Ahmed; Iida, Daisuke; Chen, Yuntian

2016-01-01

We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed...

Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Yang, Chao, E-mail: chaoyangscu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Feng, Guoying, E-mail: guoing_feng@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Dai, Shenyu, E-mail: 232127079@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Wang, Shutong, E-mail: wangshutong.scu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Li, Guang, E-mail: 632524844@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhang, Hua [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhou, Shouhuan, E-mail: zhoush@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); North China Research Institute of Electro-Optics, 4 Jiuxianqiao Street, Chaoyang District, Beijing 100015 (China)

2017-08-31

Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

International Nuclear Information System (INIS)

Yang, Chao; Feng, Guoying; Dai, Shenyu; Wang, Shutong; Li, Guang; Zhang, Hua; Zhou, Shouhuan

2017-01-01

Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

Directory of Open Access Journals (Sweden)

Lin Chien-Hung

2011-01-01

Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

Science.gov (United States)

Dong, Yajie

2017-02-01

Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum

Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

Science.gov (United States)

Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S.

2018-03-01

We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

KAUST Repository

Tangi, Malleswararao

2018-03-09

We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

International Nuclear Information System (INIS)

Donchev, V; Ivanov, T S; Borisov, K; Angelova, T; Cros, A; Cantarero, A; Fuster, D; Shtinkov, N; Gonzalez, Y; Gonzalez, L

2010-01-01

The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

Science.gov (United States)

Donchev, V.; Ivanov, T. S.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borisov, K.; Fuster, D.; González, Y.; González, L.

2010-02-01

The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

Chemical sensitivity of InP/In0.48Ga0.52P surface quantum dots studied by time-resolved photoluminescence spectroscopy

International Nuclear Information System (INIS)

De Angelis, Roberta; Casalboni, Mauro; De Matteis, Fabio; Hatami, Fariba; Masselink, William T.; Zhang, Hong; Prosposito, Paolo

2015-01-01

InP/InGaP surface quantum dots represent an attractive material for optical chemical sensors since they show a remarkable near infra-red emission at room temperature, whose intensity increases rapidly and reversibly depending on the composition of the environmental atmosphere. We show here their emission properties by time resolved photoluminescence spectroscopy investigation. Photoluminescence transients with and without chemical solvent vapours (methanol, clorophorm, acetone and water) were fitted with a 3-exponential decay law with times of about 0.5 ns, 2 ns and 7 ns. The measurements revealed a weak effect on clorophorm, acetone and water, while the initial decay time of InP surface quantum dots increases (up to 15%) upon methanol vapour exposure, indicating that the organic molecules efficiently saturate QD non-radiative surface states. - Highlights: • InP SQDs emission depends on the presence of solvent vapours in the atmosphere. • TR photoluminescence transients were fitted with a 3-exponential decay law. • The initial decay time increases (up to 15%) upon methanol vapour exposure. • Organic molecules efficiently saturate QD non-radiative surface states.

Ratiometric photoluminescence sensing based on Ti3C2 MXene quantum dots as an intracellular pH sensor.

Science.gov (United States)

Chen, Xu; Sun, Xueke; Xu, Wen; Pan, Gencai; Zhou, Donglei; Zhu, Jinyang; Wang, He; Bai, Xue; Dong, Biao; Song, Hongwei

2018-01-18

Intracellular pH sensing is of importance and can be used as an indicator for monitoring the evolution of various diseases and the health of cells. Here, we developed a new class of surface-functionalized MXene quantum dots (QDs), Ti 3 C 2 , by the sonication cutting and hydrothermal approach and further explored their intracellular pH sensing. The functionalized Ti 3 C 2 QDs exhibit bright excitation-dependent blue photoluminescence (PL) originating from the size effect and surface defects. Meanwhile, Ti 3 C 2 QDs demonstrate a high PL response induced by the deprotonation of the surface defects. Furthermore, combining the highly pH sensitive Ti 3 C 2 QDs with the pH insensitive [Ru(dpp) 3 ]Cl 2 , we developed a ratiometric pH sensor to quantitatively monitor the intracellular pH values. These novel MXene quantum dots can serve as a promising platform for developing practical fluorescent nanosensors.

The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems

Energy Technology Data Exchange (ETDEWEB)

Tsutsumi, Toshiaki [Department of Nanosystem Sciences, Yokohama City University, Yokohama 236-0027 (Japan); Alfieri, Giovanni; Kawakami, Yoichi [Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan); Micheletto, Ruggero, E-mail: ruggero@yokohama-cu.ac.jp [Department of Nanosystem Sciences, Yokohama City University, Yokohama 236-0027 (Japan)

2017-01-15

Highlights: • Photoluminescence of InGaN device is variable, there is no clear explanation for this. • We perform an ad-hoc absorption procedure, found that gases on the surface reduce emission. • We found that variability is related to the pressure of the gas in which the sample is immersed. • We point out the role of oxygen as major player in the reduction of photoluminescence. • A model is proposed and explains successfully the dynamical optical processes observed. - Abstract: We show for the first time that photoluminescence of InGaN single quantum wells (SQW) devices is related to the gas pressure in which the sample is immersed, also we give a model of the phenomena to suggest a possible cause. Our model shows a direct relation between experimental behavior and molecular coverage dynamics. This strongly suggests that the driving force of photoluminescence decrease is oxygen covering the surface of the device with a time dynamics that depends on the gas pressure. This aims to contribute to the understanding of the physical mechanism of the so-called optical memory effect and blinking phenomenon observed in these devices.

Photoluminescence up-conversion in five Inx(Al0.17Ga0.83)1-xAs/ Al0.17Ga0.83As quantum wells with different x values

DEFF Research Database (Denmark)

Machida, S.; Tadakuma, T.; Satake, A.

Photoluminescence (PL) up-conversion in a unique system with five different quantum wells has been investigated. Anti-Stokes PL intensity observed shows dramatic dependence on where carriers are resonantly photoexcited, indicating nonlinear processes with spatial position dependence.......Photoluminescence (PL) up-conversion in a unique system with five different quantum wells has been investigated. Anti-Stokes PL intensity observed shows dramatic dependence on where carriers are resonantly photoexcited, indicating nonlinear processes with spatial position dependence....

Blue photoluminescent carbon nanodots from limeade

Energy Technology Data Exchange (ETDEWEB)

Suvarnaphaet, Phitsini [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Tiwary, Chandra Sekhar [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Wetcharungsri, Jutaphet; Porntheeraphat, Supanit [NECTEC, National Science and Technology Development Agency (NSTDA), Thailand Science Park, Pathumthani 12120 (Thailand); Hoonsawat, Rassmidara [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Ajayan, Pulickel Madhavapanicker [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Tang, I-Ming [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); Department of Material Science, Faculty of Science, Kasetsart University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Asanithi, Piyapong, E-mail: asanithi@hotmail.com [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand)

2016-12-01

Carbon-based photoluminescent nanodot has currently been one of the promising materials for various applications. The remaining challenges are the carbon sources and the simple synthetic processes that enhance the quantum yield, photostability and biocompatibility of the nanodots. In this work, the synthesis of blue photoluminescent carbon nanodots from limeade via a single-step hydrothermal carbonization process is presented. Lime carbon nanodot (L-CnD), whose the quantum yield exceeding 50% for the 490 nm emission in gram-scale amounts, has the structure of graphene core functionalized with the oxygen functional groups. The micron-sized flake of the as-prepared L-CnD powder exhibits multicolor emission depending on an excitation wavelength. The L-CnDs are demonstrated for rapidly ferric-ion (Fe{sup 3+}) detection in water compared to Fe{sup 2+}, Cu{sup 2+}, Co{sup 2+}, Zn{sup 2+}, Mn{sup 2+} and Ni{sup 2+} ions. The photoluminescence quenching of L-CnD solution under UV light is used to distinguish the Fe{sup 3+} ions from others by naked eyes as low concentration as 100 μM. Additionally, L-CnDs provide exceptional photostability and biocompatibility for imaging yeast cell morphology. Changes in morphology of living yeast cells, i.e. cell shape variation, and budding, can be observed in a minute-period until more than an hour without the photoluminescent intensity loss. - Highlights: • Photoluminescent carbon nanodots are synthesized from limeade. • The quantum yield of lime carbon nanodots is higher than 50%. • The lime carbon nanodots can be applied for detecting of Fe{sup 3+} ions and for imaging living yeast cells.

Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well

International Nuclear Information System (INIS)

Baranowski, M; Kudrawiec, R; Latkowska, M; Syperek, M; Misiewicz, J; Sarmiento, T; Harris, J S

2013-01-01

In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ∼700 °C and ∼760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ∼720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

Directory of Open Access Journals (Sweden)

Wu Jiang

2010-01-01

Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Kong, Lingmin, E-mail: konglm@qq.com [School of Marine Science and Technology, Zhejiang Ocean University, Zhoushan 316000 (China); Sun, Wei [SEM School of Electromechanical Engineering, Weifang Engineering Vocational College, Qingzhou 262500 (China); Feng, Zhe Chuan, E-mail: zcfeng@nut.edu.tw [Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan (China); Xie, Sheng [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian [Department of Physics, Zhejiang Ocean University, Zhoushan 316000 (China); Wu, Zhengyun [Department of Physics, Xiamen University, Xiamen 361005 China (China)

2014-07-01

Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs. - Highlights: • InAs quantum dots (QDs) were grown on GaAs. • A thin InAlAs layer was grown on InAs QDs. • Temperature dependent photoluminescence (PL) and time-resolved PL were carried out. • Both a redshift and a double exponential decay of PL emission were generated by the InAlAs layer.

The nature of the photoluminescence in amorphized PZT

International Nuclear Information System (INIS)

Silva, M.S.; Cilense, M.; Orhan, E.; Goes, M.S.; Machado, M.A.C.; Santos, L.P.S.; Paiva-Santos, C.O.; Longo, E.; Varela, J.A.; Zaghete, M.A.; Pizani, P.S.

2005-01-01

The polymeric precursor method was used to synthesize lead zirconate titanate powder (PZT). The crystalline powder was then amorphized by a high-energy ball milling process during 120 h. A strong photoluminescence emission was observed at room temperature for the amorphized PZT powder. The powders were characterized by XRD and the percentage of amorphous phase was calculated through Rietveld refinement. The microstructure for both phases was investigated by TEM. The optical gap was calculated through the Wood and Tauc method using the UV-Vis. data. Quantum mechanical calculations were carried out to give an interpretation of the photoluminescence in terms of electronic structure

Red-shift of the photoluminescent emission peaks of CdTe quantum dots due to the synergistic interaction with carbon quantum dot mixtures

International Nuclear Information System (INIS)

Pelayo, E; Zazueta, A; López-Delgado, R; Ayón, A; Saucedo, E; Ruelas, R

2016-01-01

We report the relatively large red-shift effect observed in down-shifting carbon quantum dots (CQDs) that is anticipated to have a positive impact on the power conversion efficiency of solar cells. Specifically, with an excitation wavelength of 390 nm, CQDs of different sizes, exhibited down-shifted emission peaks centered around 425 nm. However, a solution comprised of a mixture of CQDs of different sizes, was observed to have an emission peak red-shifted to 515 nm. The effect could arise when larger carbon quantum dots capture the photons emitted by their smaller counterparts followed by the subsequent re-emission at longer wavelengths. Furthermore, the red-shift effect was also observed in CdTe QDs when added to a solution with the aforementioned mixture of Carbon QDs. Thus, whereas a solution solely comprised of a collection of CdTe QDs of different sizes, exhibited a down-shifted photoluminescence centered around 555 nm, the peak was observed to be further red-shifted to 580 nm when combined with the solution of CQDs of different sizes. The quantum dot characterization included crystal structure analysis as well as photon absorption and photoluminescence wavelengths. Subsequently, the synthesized QDs were dispersed in a polymeric layer of poly-methyl-methacrylate (PMMA) and incorporated on functional and previously characterized solar cells, to quantify their influence in the electrical performance of the photovoltaic structures. We discuss the synthesis and characterization of the produced Carbon and CdTe QDs, as well as the observed improvement in the power conversion efficiency of the fabricated photovoltaic devices. (paper)

Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2002-01-01

The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

Photoluminescence of Diamondoid Crystals

Energy Technology Data Exchange (ETDEWEB)

Clay, William; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Sasagawa, Takao; Iwasa, Akio; /TIT, Nagatsuta; Liu, Zhi; /LBNL, ALS; Dahl, Jeremy E.; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Carlson, Robert M.K.; /Molecular Diamond Technologies, Chevron Technology Ventures; Kelly, Michael; Melos, Nicholas; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Shen, Zhi-Xun; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab. /SIMES, Stanford

2012-04-03

The photoluminescence of diamondoids in the solid state is examined. All of the diamondoids are found to photoluminesce readily with initial excitation wavelengths ranging from 233 nm to 240 nm (5.3 eV). These excitation energies are more than 1 eV lower than any previously studied saturated hydrocarbon material. The emission is found to be heavily shifted from the absorption, with emission wavelengths of roughly 295 nm (4.2 eV) in all cases. In the dissolved state, however, no uorescence is observed for excitation wavelengths as short as 200 nm. We also discuss predictions and measurements of the quantum yield. Our predictions indicate that the maximum yield may be as high as 25%. Our measurement of one species, diamantane, gives a yield of 11%, the highest ever reported for a saturated hydrocarbon, even though it was likely not at the optimal excitation wavelength.

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

KAUST Repository

Marcinkevičius, S.; Gelžinytė, K.; Zhao, Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

2014-01-01

© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs

Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

International Nuclear Information System (INIS)

Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

2005-01-01

Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of W and d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties

Efficient Luminescence from Perovskite Quantum Dot Solids

KAUST Repository

Kim, Younghoon; Yassitepe, Emre; Voznyy, Oleksandr; Comin, Riccardo; Walters, Grant; Gong, Xiwen; Kanjanaboos, Pongsakorn; Nogueira, Ana F.; Sargent, Edward H.

2015-01-01

© 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

Efficient Luminescence from Perovskite Quantum Dot Solids

KAUST Repository

Kim, Younghoon

2015-11-18

© 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

High quantum yield graphene quantum dots decorated TiO_2 nanotubes for enhancing photocatalytic activity

International Nuclear Information System (INIS)

Qu, Ailan; Xie, Haolong; Xu, Xinmei; Zhang, Yangyu; Wen, Shengwu; Cui, Yifan

2016-01-01

Highlights: • High concentration yellow GQDs and TiO_2 nanotubes were achieved by a simple and green method. • High quantum yield GQDs enhanced the photodegradation capacity of TiO_2 nanotube. • The catalytic performance of GQDs/TiO_2 depends on the GQDs loading. • The improved photocatalytic activity of GQDs/TiO_2 was attributed to three aspects. - Abstract: Graphene quantum dots (GQDs) with high quantum yield (about 23.6% at an excitation wavelength of 320 nm) and GQDs/TiO_2 nanotubes (GQDs/TiO_2 NTs) composites were achieved by a simple hydrothermal method at low temperature. Photoluminescence characterization showed that the GQDs exhibited the down-conversion PL features at excitation from 300 to 420 nm and up-conversion photoluminescence in the range of 600–800 nm. The photocatalytic activity of prepared GQDs/TiO_2 NTs composites on the degradation of methyl orange (MO) was significantly enhanced compared with that of pure TiO_2 nanotubes (TiO_2 NTs). For the composites coupling with 1.5%, 2.5% and 3.5% GQDs, the degradation of MO after 20 min irradiation under UV–vis light irradiation (λ = 380–780 nm) were 80.52%, 94.64% and 51.91%, respectively, which are much higher than that of pure TiO_2 NTs (35.41%). It was inferred from the results of characterization that the improved photocatalytic activity of the GQDs/TiO_2 NTs composites was attributed to the synergetic effect of up-conversion properties of the GQDs, enhanced visible light absorption and efficient separation of photogenerated electron-holes of the GQDs/TiO_2 composite.

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

Science.gov (United States)

Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming

2012-07-11

Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

Quantum dot-polymer conjugates for stable luminescent displays.

Science.gov (United States)

Ghimire, Sushant; Sivadas, Anjaly; Yuyama, Ken-Ichi; Takano, Yuta; Francis, Raju; Biju, Vasudevanpillai

2018-05-23

The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices. One of the primary requirements for such real-world applications of quantum dots is their stable and uniform distribution in optically transparent matrices. In this work, we prepare transparent thin films of polymer-quantum dot conjugates, where CdSe/ZnS quantum dots are uniformly distributed at high densities in a chitosan-polystyrene copolymer (CS-g-PS) matrix. Here, quantum dots in an aqueous solution are conjugated to the copolymer by a phase transfer reaction. With the stable conjugation of quantum dots to the copolymer, we prevent undesired phase separation between the two and aggregation of quantum dots. Furthermore, the conjugate allows us to prepare transparent thin films in which quantum dots are uniformly distributed at high densities. The CS-g-PS copolymer helps us in not only preserving the photoluminescence properties of quantum dots in the film but also rendering excellent photostability to quantum dots at the ensemble and single particle levels, making the conjugate a promising material for photoluminescence-based devices.

Effect of Ligand Exchange on the Photoluminescence Properties of Cu-Doped Zn-In-Se Quantum Dots

Science.gov (United States)

Dong, Xiaofei; Xu, Jianping; Yang, Hui; Zhang, Xiaosong; Mo, Zhaojun; Shi, Shaobo; Li, Lan; Yin, Shougen

2018-04-01

The surface-bound ligands of a semiconductor nanocrystal can affect its electron transition behavior. We investigate the photoluminescence (PL) properties of Cu-doped Zn-In-Se quantum dots (QDs) through the exchange of oleylamine with 6-mercaptohexanol (MCH). Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies, and mass spectrometry reveal that the short-chain MCH molecules are bound to the QD surface. The emission peaks remain unchanged after ligand exchange, and the PL quantum yield is reduced from 49% to 38%. The effects of particle size and defect type on the change in PL behavior upon ligand substitution are excluded through high-resolution transmission electron microscopy, UV-Vis absorption, and PL spectroscopies. The origin of the decreased PL intensity is associated with increased ligand density and the stronger ligand electron-donating abilities of MCH-capped QDs that induce an increase in the nonradiative transition probability. A lower PL quenching transition temperature is observed for MCH-capped QDs and is associated with increasing electron-acoustic phonon coupling due to the lower melting temperature of MCH.

Surface modification effects on defect-related photoluminescence in colloidal CdS quantum dots.

Science.gov (United States)

Lee, TaeGi; Shimura, Kunio; Kim, DaeGwi

2018-05-03

We investigated the effects of surface modification on the defect-related photoluminescence (PL) band in colloidal CdS quantum dots (QDs). A size-selective photoetching process and a surface modification technique with a Cd(OH)2 layer enabled the preparation of size-controlled CdS QDs with high PL efficiency. The Stokes shift of the defect-related PL band before and after the surface modification was ∼1.0 eV and ∼0.63 eV, respectively. This difference in the Stokes shifts suggests that the origin of the defect-related PL band was changed by the surface modification. Analysis by X-ray photoelectron spectroscopy revealed that the surface of the CdS QDs before and after the surface modification was S rich and Cd rich, respectively. These results suggest that Cd-vacancy acceptors and S-vacancy donors affect PL processes in CdS QDs before and after the surface modification, respectively.

Quantum-well exciton polariton emission from multi-quantum-well wire structures

Science.gov (United States)

Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

The radiative decay of quantum-well exciton (QWE) polaritons in microstructured Al0.3Ga0.7As - GaAs multi-quantum wells (MQW) has been studied by photoluminescence spectroscopy. Periodic wire structures with lateral periodicities a = 250-500 nm and lateral widths t = 100-200 nm have been fabricated by plasma etching. The thickness of the QWs was 13 nm. In the QW wire samples the free-exciton photoluminescence was strongly reduced and the QWE polariton emission was observed as a maximum peaked at a 3 meV higher energy than the free QWE transition. In samples which had only a microstructured cladding layer, the free-exciton photoluminescence was dominant in the spectrum and the QWE polariton emission was observed as a shoulder on the high-energy side of the free QWE transition. In addition, two transitions at the low energy side of the free QWE photoluminescence were present in the microstructured samples, which were related to etching induced states.

Thermal activation of carriers from semiconductor quantum wells

International Nuclear Information System (INIS)

Johnston, M.B.; Herz, L.M.; Dao, L.V.; Gal, M.; Tan, H.H.; Jagadish, C.

1999-01-01

Full text: We have conducted a systematic investigation of the thermal excitation of carriers in confined states of quantum wells. Carriers may be injected into a sample containing a quantum well electrically or optically, once there they rapidly thermalise and are captured by the confined state of the quantum well. Typically electrons and holes recombine radiatively from their respective quantum well states. As a quantum well sample is heated from low temperatures (∼10K), phonon interactions increase which leads to carriers being excited from the well region into the higher energy, barrier region of the sample. Since carrier recombination from barrier regions is via non-radiative processes, there is strong temperature dependence of photoluminescence from the quantum well region. We measured quantum well photoluminescence as a function of excitation intensity and wavelength over the temperature range from 8K to 300K. In high quality InGaAs quantum wells we found unexpected intensity dependence of the spectrally integrated temperature dependent photoluminescence. We believe that this is evidence for by the existence of saturable states at the interfaces of the quantum wells

Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

International Nuclear Information System (INIS)

Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

2005-01-01

Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

Size dependent photoluminescence property of hydrothermally synthesized crystalline carbon quantum dots

Energy Technology Data Exchange (ETDEWEB)

Sarkar, S.; Banerjee, D.; Ghorai, U.K.; Das, N.S. [School of Material Science and Nanotechnology Jadavpur University, Kolkata 700032 (India); Chattopadhyay, K.K., E-mail: kalyan_chattopadhyay@yahoo.com [School of Material Science and Nanotechnology Jadavpur University, Kolkata 700032 (India); Thin Film and NanoScience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032 (India)

2016-10-15

In this work, simple hydrothermal synthesis of water soluble Carbon quantum dots (CQDs) of different sizes has been reported. The effect of synthesis temperature and synthesis time on the particle size has also been shown. The structures of all the as-prepared samples were studied by field emission scanning electron microscope and high resolution transmission electron microscope. Fourier transformed infrared spectrophotometer analyzes the different bonding present in the sample whereas Raman spectrophotometer quantifies the hybridization state of the prepared samples. UV–vis spectrophotometer gives the variation of absorbance of all the samples with wavelength. Dynamic light scattering study shows the variation of particle size with deposition condition and corresponding zeta potential gives the idea about the stability of the CQD solutions. The photoluminescence (PL) properties of the as prepared CQDs were also studied in detail. It is noticed that with the increase of excitation wavelength, the PL emissions for the different samples were red shifted. The results have been explained in terms of the excitation dependent emission, variations in size of the CQD and presence of different functional groups on the surface of CQDs.

Size dependent photoluminescence property of hydrothermally synthesized crystalline carbon quantum dots

International Nuclear Information System (INIS)

Sarkar, S.; Banerjee, D.; Ghorai, U.K.; Das, N.S.; Chattopadhyay, K.K.

2016-01-01

In this work, simple hydrothermal synthesis of water soluble Carbon quantum dots (CQDs) of different sizes has been reported. The effect of synthesis temperature and synthesis time on the particle size has also been shown. The structures of all the as-prepared samples were studied by field emission scanning electron microscope and high resolution transmission electron microscope. Fourier transformed infrared spectrophotometer analyzes the different bonding present in the sample whereas Raman spectrophotometer quantifies the hybridization state of the prepared samples. UV–vis spectrophotometer gives the variation of absorbance of all the samples with wavelength. Dynamic light scattering study shows the variation of particle size with deposition condition and corresponding zeta potential gives the idea about the stability of the CQD solutions. The photoluminescence (PL) properties of the as prepared CQDs were also studied in detail. It is noticed that with the increase of excitation wavelength, the PL emissions for the different samples were red shifted. The results have been explained in terms of the excitation dependent emission, variations in size of the CQD and presence of different functional groups on the surface of CQDs.

Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites.

Science.gov (United States)

Stoddard, Ryan J; Eickemeyer, Felix T; Katahara, John K; Hillhouse, Hugh W

2017-07-20

High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83 Cs 0.17 Pb(I 0.66 Br 0.34 ) 3 , resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

2016-08-31

Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

International Nuclear Information System (INIS)

Woscholski, R.; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

2016-01-01

Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C

Surface effects on the photoluminescence of Si quantum dots

International Nuclear Information System (INIS)

Wang, Chiang-Jing; Tsai, Meng-Yen; Chi, Cheng Chung; Perng, Tsong-Pyng

2009-01-01

Si quantum dots (SiQDs) with sizes ranging from 5 to 20 nm were fabricated by vapor condensation. They showed red photoluminescence (PL) in vacuum with the peak located at around 750 nm. After the specimen was exposed to air, the PL intensity became higher, and continued to increase during the PL test with a cycling of vacuum-air-vacuum. In pure oxygen, the PL intensity exhibited an irreversible decrease, while in nitrogen a smaller amount of reversible increase of PL intensity was observed. Furthermore, the PL intensity exhibited a remarkable enhancement if the SiQDs were treated with water. With HF treatment, the PL peak position showed a blue-shift to 680 nm, and was recovered after subsequent exposure to air. Si-O-H complexes were suggested to be responsible for this red luminescence. The irreversible decrease of PL intensity due to oxygen adsorption was speculated to be caused by the modification of chemical bonds on the surface. In the case of nitrogen adsorption, the PL change was attributed to the surface charging during adsorption.

Photoluminescence of anti-modulation doped near-surface GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma

CERN Document Server

Bumaj, Y A; Goldkhan, R; Shtajn, N; Golombek, A; Nakov, V; Cheng, T S

2002-01-01

The anti-modulation Si-doped GaAs/AlGaAs structures with near-surface single quantum wells grown by molecular-beam epitaxy were exposed to hydrogen plasma at 260 deg C and investigated by low-temperature photoluminescence, photoluminescence excitation and photoreflectance spectroscopy. After hydrogenation, the quenching of the exciton luminescence for the below AlGaAs band gap excitation due to the increase of electric field in the structure has been observed. The effect is consistent with unpinning of Fermi level from mid gap of nominally undoped (p-type) GaAs cap layer due to passivation of surface states by hydrogen without neutralization of shallow impurities in the epilayers

Photoluminescent properties of single crystal diamond microneedles

Science.gov (United States)

Malykhin, Sergey A.; Ismagilov, Rinat R.; Tuyakova, Feruza T.; Obraztsova, Ekaterina A.; Fedotov, Pavel V.; Ermakova, Anna; Siyushev, Petr; Katamadze, Konstantin G.; Jelezko, Fedor; Rakovich, Yury P.; Obraztsov, Alexander N.

2018-01-01

Single crystal needle-like diamonds shaped as rectangular pyramids were produced by combination of chemical vapor deposition and selective oxidation with dimensions and geometrical characteristics depending on the deposition process parameters. Photoluminescence spectra and their dependencies on wavelength of excitation radiation reveal presence of nitrogen- and silicon-vacancy color centers in the diamond crystallites. Photoluminescence spectra, intensity mapping, and fluorescence lifetime imaging microscopy indicate that silicon-vacancy centers are concentrated at the crystallites apex while nitrogen-vacancy centers are distributed over the whole crystallite. Dependence of the photoluminescence on excitation radiation intensity demonstrates saturation and allows estimation of the color centers density. The combination of structural parameters, geometry and photoluminescent characteristics are prospective for advantageous applications of these diamond crystallites in quantum information processing and optical sensing.

Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

Science.gov (United States)

Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

2018-06-01

InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

High quantum yield graphene quantum dots decorated TiO{sub 2} nanotubes for enhancing photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Qu, Ailan, E-mail: qal67@163.com; Xie, Haolong; Xu, Xinmei; Zhang, Yangyu; Wen, Shengwu; Cui, Yifan

2016-07-01

Highlights: • High concentration yellow GQDs and TiO{sub 2} nanotubes were achieved by a simple and green method. • High quantum yield GQDs enhanced the photodegradation capacity of TiO{sub 2} nanotube. • The catalytic performance of GQDs/TiO{sub 2} depends on the GQDs loading. • The improved photocatalytic activity of GQDs/TiO{sub 2} was attributed to three aspects. - Abstract: Graphene quantum dots (GQDs) with high quantum yield (about 23.6% at an excitation wavelength of 320 nm) and GQDs/TiO{sub 2} nanotubes (GQDs/TiO{sub 2} NTs) composites were achieved by a simple hydrothermal method at low temperature. Photoluminescence characterization showed that the GQDs exhibited the down-conversion PL features at excitation from 300 to 420 nm and up-conversion photoluminescence in the range of 600–800 nm. The photocatalytic activity of prepared GQDs/TiO{sub 2} NTs composites on the degradation of methyl orange (MO) was significantly enhanced compared with that of pure TiO{sub 2} nanotubes (TiO{sub 2} NTs). For the composites coupling with 1.5%, 2.5% and 3.5% GQDs, the degradation of MO after 20 min irradiation under UV–vis light irradiation (λ = 380–780 nm) were 80.52%, 94.64% and 51.91%, respectively, which are much higher than that of pure TiO{sub 2} NTs (35.41%). It was inferred from the results of characterization that the improved photocatalytic activity of the GQDs/TiO{sub 2} NTs composites was attributed to the synergetic effect of up-conversion properties of the GQDs, enhanced visible light absorption and efficient separation of photogenerated electron-holes of the GQDs/TiO{sub 2} composite.

Photoluminescence enhancement in nanocomposite thin films of CdS-ZnO

International Nuclear Information System (INIS)

Ayyub, Pushan; Vasa, Parinda; Taneja, Praveen; Banerjee, Rajarshi; Singh, B.P.

2005-01-01

We show that the photoluminescence emitted from a dense, two-component quantum dot ensemble on a thin film is significantly higher and decays much faster than that from quantum dots of either of the two pure systems (CdS and ZnO). The semiconductor nanocomposite, in which the characteristic grain size of each species was 2-3 nm, was deposited directly on Si wafers by high-pressure magnetron sputtering, and exhibits a single, relatively sharp optical absorption edge

(110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T-shaped quantum wires

DEFF Research Database (Denmark)

Gislason, Hannes; Sørensen, Claus Birger; Hvam, Jørn Märcher

1996-01-01

High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T-shaped GaAs/AlGaAs quantum wires, We investigate theoretically and experimentally 20-200 Angstrom wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved...... edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Angstrom is derived from the photoluminescence linewidths. The growth rate...

Photoluminescence spectrum changes of GaN quantum wells caused by the strong piezoelectric fields

Energy Technology Data Exchange (ETDEWEB)

Herrera, H.; Calderon, A. [CICATA-IPN, Av. Legaria 694, Col. Irrigacion, 11500 Mexico D.F. (Mexico); Gonzalez de la Cruz, G. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico)

2006-07-01

Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields induce a reduction of the oscillator strength on the transition energy between the confined electron and hole states in GaN/Al{sub x}Ga{sub 1-x}N QW's and dramatically increase the carrier life time as the QW thickness increases. In this work, we solve analytically the Schroedinger equation for moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large redshifts of the PL energy position and the spatial separation of the electron and hole by several times of the Bohr radius caused by the strong piezoelectric fields are explained using a triangular potential in the Schrodinger equation. The transition energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement with the measured photoluminescence energy peaks. (Author)

Photoluminescence spectrum changes of GaN quantum wells caused by the strong piezoelectric fields

International Nuclear Information System (INIS)

Herrera, H.; Calderon, A.; Gonzalez de la Cruz, G.

2006-01-01

Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields induce a reduction of the oscillator strength on the transition energy between the confined electron and hole states in GaN/Al x Ga 1-x N QW's and dramatically increase the carrier life time as the QW thickness increases. In this work, we solve analytically the Schroedinger equation for moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large redshifts of the PL energy position and the spatial separation of the electron and hole by several times of the Bohr radius caused by the strong piezoelectric fields are explained using a triangular potential in the Schrodinger equation. The transition energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement with the measured photoluminescence energy peaks. (Author)

The effect of ultraviolet irradiation on the photothermal, photoluminescence and photoluminescence excitation spectra of Mn-doped ZnS nanoparticles

International Nuclear Information System (INIS)

Briones Cruz, Almira; Shen Qing; Toyoda, Taro

2006-01-01

Research involving Mn doped nanocrystalline ZnS (ZnS:Mn) has grown in recent years, partly due to the high quantum luminescence efficiencies that have been reported. We measured the photoacoustic (PA), the photoluminescence (PL) and the photoluminescence excitation (PLE) spectra of surface-passivated and unpassivated ZnS:Mn. The effects of UV irradiation on the PL and PLE spectra were also studied. A decrease in the PA intensity after UV exposure was observed for the ZnS:Mn, indicating a decrease in the nonradiative relaxation probability. The observed increase in PL intensity indicates a corresponding increase in the radiative transition probability. For the PLE spectra, possible aggregation of the primary particles could have resulted in the lower measured energy of the PLE peak compared to the value predicted by the effective mass approximation theory

Strategy for synthesizing quantum dot-layered double hydroxide nanocomposites and their enhanced photoluminescence and photostability.

Science.gov (United States)

Cho, Seungho; Jung, Sungwook; Jeong, Sanghwa; Bang, Jiwon; Park, Joonhyuck; Park, Youngrong; Kim, Sungjee

2013-01-08

Layered double hydroxide-quantum dot (LDH-QD) composites are synthesized via a room temperature LDH formation reaction in the presence of QDs. InP/ZnS (core/shell) QD, a heavy metal free QD, is used as a model constituent. Interactions between QDs (with negative zeta potentials), decorated with dihydrolipoic acids, and inherently positively charged metal hydroxide layers of LDH during the LDH formations are induced to form the LDH-QD composites. The formation of the LDH-QD composites affords significantly enhanced photoluminescence quantum yields and thermal- and photostabilities compared to their QD counterparts. In addition, the fluorescence from the solid LDH-QD composite preserved the initial optical properties of the QD colloid solution without noticeable deteriorations such as red-shift or deep trap emission. Based on their advantageous optical properties, we also demonstrate the pseudo white light emitting diode, down-converted by the LDH-QD composites.

Visible photoluminescence from hydrogenated silicon particles suspended in a silane plasma

International Nuclear Information System (INIS)

Courteille, C.; Dorier, J.L.; Dutta, J.; Hollenstein, C.; Howling, A.A.; Stoto, T.

1994-09-01

Visible photoluminescence at room temperature has been observed in amorphous hydrogenated silicon particulates during their formation in a silane radio-frequency plasma. Oxygen injection along with mass spectrometry measurements demonstrate that oxygen has no influence on the photoluminescence. The appearance of visible photoluminescence coincides with a particle agglomeration phase as shown by laser light scattering experiments, and electron microscopy shows silicon nanocrystals within these particulates. These observations of visible photoluminescence are consistent with the model of quantum confinement in the silicon nanocrystals. (author) 5 figs., 45 refs

Composition-dependent photoluminescence properties of CuInS_2/ZnS core/shell quantum dots

International Nuclear Information System (INIS)

Hua, Jie; Du, Yuwei; Wei, Qi; Yuan, Xi; Wang, Jin; Zhao, Jialong; Li, Haibo

2016-01-01

CuInS_2/ZnS (CIS/ZnS) core/shell quantum dots (QDs) with various Cu/In ratios were synthesized using the hot-injection method, and their photoluminescence (PL) properties were investigated by measuring steady-state and time-resolved PL spectroscopy. The emission peak of the CIS/ZnS QDs were tuned from 680 to 580 nm by decreasing the Cu/In precursor ratio from 1/1 to 1/9. As the Cu/In ratio decreases, the PL lifetimes and PL quantum yields (QYs) of CIS/ZnS core/shell QDs increased firstly and then decreased. Two dominant radiative recombination processes were postulated to analyze composition-dependent PL properties, including the recombination from a quantized conduction band to deep defects state and donor-acceptor pair (DAP) recombination. The decrease of PL efficiency resulted from high density defects and traps, which formed at the interface between CIS core and ZnS shell due to the large off-stoichiometry composition. The PL intensity and peak energy for CIS/ZnS core/shell QDs as a function of temperature were also provided. The thermal quenching further confirmed that the PL emission of CIS/ZnS QDs did not come from the recombination of excitons but from the recombination of many kinds of intrinsic defects inside the QDs as emission centers.

Photoluminescence of ZnS: Mn quantum dot by hydrothermal method

Directory of Open Access Journals (Sweden)

Yun Hu

2018-01-01

Full Text Available ZnS: Mn quantum dots (QDs with the average grain size from 4.2 to 7.2 nm were synthesized by a hydrothermal method. All samples were cubic zinc blende structure (β-ZnS measured using X-ray diffraction (XRD. And the main diffraction peaks of ZnS: Mn shifted slightly towards higher angle in comparison with the intrinsic ZnS because of the substitution of Mn2+ for Zn2+. Due to the small grain size (4-7 nm effect, the poor dispersion and serious reunion phenomenon for the samples were observed from transmission electron microscopy (TEM. ZnS: Mn QDs had four peaks centered at 466, 495, 522, and 554 nm, respectively, in the photoluminescence (PL spectra, in which the band at 554 nm absent in the intrinsic ZnS: Mn is attributed to the doping of Mn2+ in the lattice sites. As the concentration of Mn2+ increasing from 0% to 0.6 at%, the intensity of the PL emission also increased. But the concentration reached 0.9 at%, quenching of PL emission occurred. The peak in ZnS: Mn QDs observed at 490 cm-1 was originated from the stretching vibration of the Mn–O bonds in the Fourier transform infrared (FTIR spectra. And the small changes about this peak compared with the previous reports at 500 cm-1 can be attributed to the formation of quantum dots. This method we utilized to synthesize ZnS: Mn QDs is very simple, low cost, and applicable for other semiconductor QD materials.

Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen InxGa1−xNyAs1−y/GaAs cylindrically shaped quantum dots

International Nuclear Information System (INIS)

Duque, C.M.; Morales, A.L.; Mora-Ramos, M.E.; Duque, C.A.

2014-01-01

An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs

Rhodamine 6G impregnated porous silica: A photoluminescence study

Energy Technology Data Exchange (ETDEWEB)

Anedda, A. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Canada) (Italy); Carbonaro, C.M. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Canada) (Italy)]. E-mail: cm.carbonaro@dsf.unica.it; Clemente, F. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Corpino, R. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Ricci, P.C. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Rossini, S. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy)

2005-12-15

The optical properties of rhodamine 6G dye confined in porous silica are reported. Photoluminescence properties of embedded chromophores in mesoporous hosts can be affected by the surrounding matrices: shifts in emission spectra and variations of photoluminescence quantum yield are found as compared to dye solutions. Host-guest interactions are studied here by varying both SiO{sub 2} xerogels porosity and the dye concentration. Comparing samples obtained by impregnating matrices with 5.4 and 18.2 nm pores with solutions having concentrations in the rhodamine 6G high laser gain, matrices with 5.4 nm pores impregnated with a dye concentration of 5 x 10{sup -4} M are found to be the most stable and efficient in the examined range.

Electric Field Modulation of Semiconductor Quantum Dot Photoluminescence: Insights Into the Design of Robust Voltage-Sensitive Cellular Imaging Probes.

Science.gov (United States)

Rowland, Clare E; Susumu, Kimihiro; Stewart, Michael H; Oh, Eunkeu; Mäkinen, Antti J; O'Shaughnessy, Thomas J; Kushto, Gary; Wolak, Mason A; Erickson, Jeffrey S; Efros, Alexander L; Huston, Alan L; Delehanty, James B

2015-10-14

The intrinsic properties of quantum dots (QDs) and the growing ability to interface them controllably with living cells has far-reaching potential applications in probing cellular processes such as membrane action potential. We demonstrate that an electric field typical of those found in neuronal membranes results in suppression of the QD photoluminescence (PL) and, for the first time, that QD PL is able to track the action potential profile of a firing neuron with millisecond time resolution. This effect is shown to be connected with electric-field-driven QD ionization and consequent QD PL quenching, in contradiction with conventional wisdom that suppression of the QD PL is attributable to the quantum confined Stark effect.

Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells

Energy Technology Data Exchange (ETDEWEB)

Gu, Y.; Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn; Chen, X. Y.; Xi, S. P.; Du, B.; Ma, Y. J. [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2015-11-23

We report the effect of Bi surfactant on the properties of highly strained InAs/InGaAs triangular quantum wells grown on InP substrates. Reduced surface roughness, improved heterostructure interfaces and enhanced photoluminescence intensity at 2.2 μm are observed by moderate Bi-mediated growth. The nonradiative processes are analysed based on temperature-dependent photoluminescence. It is confirmed that Bi incorporation is insignificant in the samples, whereas excessive Bi flux during the growth results in deteriorated performance. The surfactant effect of Bi is promising to improve InP-based highly strained structures while the excess of Bi flux needs to be avoided.

Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

DEFF Research Database (Denmark)

Iida, Daisuke; Fadil, Ahmed; Chen, Yuntian

2015-01-01

We report internal quantum efficiency enhancement of thin p-GaN green quantumwell structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhance......We report internal quantum efficiency enhancement of thin p-GaN green quantumwell structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density...

"High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires"

Energy Technology Data Exchange (ETDEWEB)

GARGAS, DANIEL; GAO, HANWEI; WANG, HUNGTA; PEIDONG, YANG

2010-12-01

External quantum efficiency (EQE) of photoluminescence as high as 20 percent from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials.

The pH-dependent photoluminescence of colloidal CdSe/ZnS quantum dots with different organic coatings

International Nuclear Information System (INIS)

Debruyne, David; Locquet, Jean-Pierre; Van Bael, Margriet J; Deschaume, Olivier; Bartic, Carmen; Coutiño-Gonzalez, Eduardo; Hofkens, Johan

2015-01-01

The photoluminescence (PL) of colloidal quantum dots (QDs) is known to be sensitive to the solution pH. In this work we investigate the role played by the organic coating in determining the pH-dependent PL. We compare two types of CdSe/ZnS QDs equipped with different organic coatings, namely dihydrolipoic acid (DHLA)-capped QDs and phospholipid micelle-encapsulated QDs. Both QD types have their PL intensity quenched at acidic pH values, but they differ in terms of the reversibility of the quenching process. For DHLA-capped QDs, the quenching is nearly irreversible, with a small reversible component visible only on short time scales. For phospholipid micelle-encapsulated QDs the quenching is notably almost fully reversible. We suggest that the surface passivation by the organic ligands is reversible for the micelle-encapsulated QDs. Additionally, both coatings display pH-dependent spectral shifts. These shifts can be explained by a combination of irreversible processes, such as photo-oxidation and acid etching, and reversible charging of the QD surface, leading to the quantum-confined Stark effect (QCSE), the extent of each effect being coating-dependent. At high ionic strengths, the aggregation of QDs also leads to a spectral (red) shift, which is attributable to the QCSE and/or electronic energy transfer. (paper)

Nanomedicine photoluminescence crystal-inspired brain sensing approach

Science.gov (United States)

Fang, Yan; Wang, Fangzhen; Wu, Rong

2018-02-01

Precision sensing needs to overcome a gap of a single atomic step height standard. In response to the cutting-edge challenge, a heterosingle molecular nanomedicine crystal was developed wherein a nanomedicine crystal height less than 1 nm was designed and selfassembled on a substrate of either a highly ordered and freshly separated graphite or a N-doped silicon with hydrogen bonding by a home-made hybrid system of interacting single bioelectron donor-acceptor and a single biophoton donor-acceptor according to orthogonal mathematical optimization scheme, and an atomic spatial resolution conducting atomic force microscopy (C-AFM) with MHz signal processing by a special transformation of an atomic force microscopy (AFM) and a scanning tunneling microscopy (STM) were employed, wherein a z axis direction UV-VIS laser interferometer and a feedback circuit were used to achieve the minimized uncertainty of a micro-regional structure height and its corresponding local differential conductance quantization (spin state) process was repeatedly measured with a highly time resolution, as well as a pulsed UV-VIS laser micro-photoluminescence (PL) spectrum with a single photon resolution was set up by traceable quantum sensing and metrology relied up a quantum electrical triangle principle. The coupling of a single bioelectron conducting, a single biophoton photoluminescence, a frequency domain temporal spin phase in nanomedicine crystal-inspired sensing methods and sensor technologies were revealed by a combination of C-AFM and PL measurement data-based mathematic analyses1-3, as depicted in Figure 1 and repeated in nanomedicine crystals with a single atomic height. It is concluded that height-current-phase uncertainty correlation pave a way to develop a brain imaging and a single atomic height standard, quantum sensing, national security, worldwide impact1-3 technology and beyond.

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kawazu, T., E-mail: KAWAZU.Takuya@nims.go.jp; Noda, T.; Sakuma, Y. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)

2016-04-15

We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 {sup o}C and 400 {sup o}C) and carried out PL measurements. The 20 {sup o}C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences of the PL characteristics are explained by the effects of the WL.

Quantum Electrodynamics with Semiconductor Quantum Dots Coupled to Anderson‐localized Random Cavities

DEFF Research Database (Denmark)

Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

2011-01-01

of the spontaneous emission decay rate by up to a factor 15 and an efficiency of channeling single photons into Anderson-localized modes reaching values as high as 94%. These results prove that disordered photonic media provide an efficient platform for quantum electrodynamics, offering a novel route to quantum......We demonstrate that the spontaneous emission decay rate of semiconductor quantum dots can be strongly modified by the coupling to disorder-induced Anderson-localized photonic modes. We experimentally measure, by means of time-resolved photoluminescence spectroscopy, the enhancement...

Characteristics of exciton photoluminescence kinetics in low-dimensional silicon structures

CERN Document Server

Sachenko, A V; Manojlov, E G; Svechnikov, S V

2001-01-01

The time-resolved visible photoluminescence of porous nanocrystalline silicon films obtained by laser ablation have been measured within the temperature range 90-300 K. A study has been made of the interrelationship between photoluminescence characteristics (intensity, emission spectra, relaxation times, their temperature dependencies and structural and dielectric properties (size and shapes of Si nanocrystals, oxide phase of nanocrystal coating, porosity). A photoluminescence model is proposed that describes photon absorption and emission occurring in quantum-size Si nanocrystals while coupled subsystems of electron-hole pairs and excitons take part in the recombination. Possible excitonic Auger recombination mechanism in low-dimensional silicon structures is considered

Photoluminescence study of the nitrogen content effect on GaAs/GaAs1-xNx/GaAs/AlGaAs: (Si) quantum well

International Nuclear Information System (INIS)

Hamdouni, A.; Bousbih, F.; Ben bouzid, S.; Aloulou, S.; Harmand, J.C.; Chtourou, R.

2008-01-01

We study the effect of nitrogen content in modulation-doped GaAs/GaAs 1-x N x /GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs 1-x N x /GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model

Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

International Nuclear Information System (INIS)

Ramírez-Porras, A.; García, O.; Vargas, C.; Corrales, A.; Solís, J.D.

2015-01-01

Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models

Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

Energy Technology Data Exchange (ETDEWEB)

Ramírez-Porras, A., E-mail: aramirez@fisica.ucr.ac.cr [Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); García, O. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Vargas, C. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Corrales, A. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Solís, J.D. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica)

2015-08-30

Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

International Nuclear Information System (INIS)

Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

2006-01-01

The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

Functionalization of graphene oxide nanostructures improves photoluminescence and facilitates their use as optical probes in preclinical imaging

Science.gov (United States)

Prabhakar, Neeraj; Näreoja, Tuomas; von Haartman, Eva; Şen Karaman, Didem; Burikov, Sergey A.; Dolenko, Tatiana A.; Deguchi, Takahiro; Mamaeva, Veronika; Hänninen, Pekka E.; Vlasov, Igor I.; Shenderova, Olga A.; Rosenholm, Jessica M.

2015-06-01

Recently reported photoluminescent nanographene oxides (nGOs), i.e. nanographene oxidised with a sulfuric/nitric acid mixture (SNOx method), have tuneable photoluminescence and are scalable, simple and fast to produce optical probes. This material belongs to the vast class of photoluminescent carbon nanostructures, including carbon dots, nanodiamonds (NDs), graphene quantum dots (GQDs), all of which demonstrate a variety of properties that are attractive for biomedical imaging such as low toxicity and stable photoluminescence. In this study, the nGOs were organically surface-modified with poly(ethylene glycol)-poly(ethylene imine) (PEG-PEI) copolymers tagged with folic acid as the affinity ligand for cancer cells expressing folate receptors. The functionalization enhanced both the cellular uptake and quantum efficiency of the photoluminescence as compared to non-modified nGOs. The nGOs exhibited an excitation dependent photoluminescence that facilitated their detection with a wide range of microscope configurations. The functionalized nGOs were non-toxic, they were retained in the stained cell population over a period of 8 days and they were distributed equally between daughter cells. We have evaluated their applicability in in vitro and in vivo (chicken embryo CAM) models to visualize and track migratory cancer cells. The good biocompatibility and easy detection of the functionalized nGOs suggest that they could address the limitations faced with quantum dots and organic fluorophores in long-term in vivo biomedical imaging.Recently reported photoluminescent nanographene oxides (nGOs), i.e. nanographene oxidised with a sulfuric/nitric acid mixture (SNOx method), have tuneable photoluminescence and are scalable, simple and fast to produce optical probes. This material belongs to the vast class of photoluminescent carbon nanostructures, including carbon dots, nanodiamonds (NDs), graphene quantum dots (GQDs), all of which demonstrate a variety of properties that are

High Quantum Yield Blue Emission from Lead-Free Inorganic Antimony Halide Perovskite Colloidal Quantum Dots.

Science.gov (United States)

Zhang, Jian; Yang, Ying; Deng, Hui; Farooq, Umar; Yang, Xiaokun; Khan, Jahangeer; Tang, Jiang; Song, Haisheng

2017-09-26

Colloidal quantum dots (QDs) of lead halide perovskite have recently received great attention owing to their remarkable performances in optoelectronic applications. However, their wide applications are hindered from toxic lead element, which is not environment- and consumer-friendly. Herein, we utilized heterovalent substitution of divalent lead (Pb 2+ ) with trivalent antimony (Sb 3+ ) to synthesize stable and brightly luminescent Cs 3 Sb 2 Br 9 QDs. The lead-free, full-inorganic QDs were fabricated by a modified ligand-assisted reprecipitation strategy. A photoluminescence quantum yield (PLQY) was determined to be 46% at 410 nm, which was superior to that of other reported halide perovskite QDs. The PL enhancement mechanism was unraveled by surface composition derived quantum-well band structure and their large exciton binding energy. The Br-rich surface and the observed 530 meV exciton binding energy were proposed to guarantee the efficient radiative recombination. In addition, we can also tune the inorganic perovskite QD (Cs 3 Sb 2 X 9 ) emission wavelength from 370 to 560 nm via anion exchange reactions. The developed full-inorganic lead-free Sb-perovskite QDs with high PLQY and stable emission promise great potential for efficient emission candidates.

Improved photoluminescence quantum yield and stability of CdSe-TOP, CdSe-ODA-TOPO, CdSe/CdS and CdSe/EP nanocomposites

Science.gov (United States)

Wei, Shutian; Zhu, Zhilin; Wang, Zhixiao; Wei, Gugangfen; Wang, Pingjian; Li, Hai; Hua, Zhen; Lin, Zhonghai

2016-07-01

Size-controllable monodisperse CdSe nanocrystals with different organic capping were prepared based on the hot-injection method. The effective separation of nucleation and growth was achieved by rapidly mixing two highly reactive precursors. As a contrast, we prepared CdSe/CdS nanocrystals (NCs) successfully based on the selective ion layer adsorption and reaction (SILAR) technique. This inorganic capping obtained higher photoluminescence quantum yield (PLQY) of 59.3% compared with organic capping of 40.8%. Furthermore, the CdSe-epoxy resin (EP) composites were prepared by adopting a flexible ex situ method, and showed excellent stability in the ambient environment for one year. So the composites with both high PLQY of nanocrystals and excellent stability are very promising to device application.

Intense, stable and excitation wavelength-independent photoluminescence emission in the blue-violet region from phosphorene quantum dots

Science.gov (United States)

Ge, Shuaipeng; Zhang, Lisheng; Wang, Peijie; Fang, Yan

2016-01-01

Nanoscale phosphorene quantum dots (PQDs) with few-layer structures were fabricated by pulsed laser ablation of a bulk black phosphorus target in diethyl ether. An intense and stable photoluminescence (PL) emission of the PQDs in the blue-violet wavelength region is clearly observed for the first time, which is attributed to electronic transitions from the lowest unoccupied molecular orbital (LUMO) to the highest occupied molecular orbital (HOMO) and occupied molecular orbitals below the HOMO (H-1, H-2), respectively. Surprisingly, the PL emission peak positions of the PQDs are not red-shifted with progressively longer excitation wavelengths, which is in contrast to the cases of graphene and molybdenum disulphide quantum dots. This excitation wavelength-independence is derived from the saturated passivation on the periphery and surfaces of the PQDs by large numbers of electron-donating functional groups which cause the electron density on the PQDs to be dramatically increased and the band gap to be insensitive to the quantum size effect in the PQDs. This work suggests that PQDs with intense, stable and excitation wavelength-independent PL emission in the blue-violet region have a potential application as semiconductor-based blue-violet light irradiation sources. PMID:27265198

Self-assembly of concentric quantum double rings.

Science.gov (United States)

Mano, Takaaki; Kuroda, Takashi; Sanguinetti, Stefano; Ochiai, Tetsuyuki; Tateno, Takahiro; Kim, Jongsu; Noda, Takeshi; Kawabe, Mitsuo; Sakoda, Kazuaki; Kido, Giyuu; Koguchi, Nobuyuki

2005-03-01

We demonstrate the self-assembled formation of concentric quantum double rings with high uniformity and excellent rotational symmetry using the droplet epitaxy technique. Varying the growth process conditions can control each ring's size. Photoluminescence spectra emitted from an individual quantum ring complex show peculiar quantized levels that are specified by the carriers' orbital trajectories.

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Energy Technology Data Exchange (ETDEWEB)

Kundys, D., E-mail: dmytro.kundys@manchester.ac.uk; Sutherland, D.; Badcock, T. J.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S. [Photonics Theory group, Tyndall National Institute, Lee Maltings, Cork (Ireland); Oehler, F.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS (United Kingdom)

2014-03-21

We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum.

The effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution x-ray diffraction and photoluminescence

International Nuclear Information System (INIS)

Selvig, E; Myrvaagnes, G; Bugge, R; Haakenaasen, R; Fimland, B O

2006-01-01

Molecular beam epitaxy has been used to grow GaInAsSb/AlGaAsSb multiple-quantum-well (MQW) structures. Growth has been interrupted at the interfaces between the wells and the barriers. During the growth interruptions, the interfaces have been exposed to Sb x (x=1, 2) and As 2 fluxes. The structures have been studied using high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL). The As content in the interface layers has been found to have a large impact on the HRXRD curves. The As content in the interface layers has been determined by simulation of HRXRD rocking curves. We also show how highly strained interfaces cause more satellite peaks to appear in HRXRD rocking curves. PL spectra show that interrupting growth at the interfaces between wells and barriers and exposing the interfaces to an Sb soak result in flatter interfaces

Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities

DEFF Research Database (Denmark)

Reitzenstein, S.; Schneider, C.; Albert, F.

2011-01-01

Semiconductor quantum dots (QDs) are fascinating nanoscopic structures for photonics and future quantum information technology. However, the random position of self-organized QDs inhibits a deterministic coupling in devices relying on cavity quantum electrodynamics (cQED) effects which complicates......, e.g., the large scale fabrication of quantum light sources. As a result, large efforts focus on the growth and the device integration of site-controlled QDs. We present the growth of low density arrays of site-controlled In(Ga)As QDs where shallow etched nanoholes act as nucleation sites...... linewidth, the oscillator strength and the quantum efficiency. A stacked growth of strain coupled SCQDs forming on wet chemically etched nanoholes provide the smallest linewidth with an average value of 210 μeV. Using time resolved photoluminescence studies on samples with a varying thickness of the capping...

Optical properties of the semiconductor quantum structure

International Nuclear Information System (INIS)

Haratizadeh, H.; Holtz, P.O.; Monemar, B.; Karlsoon, K.F.; Moskalenko, E.S.; Amano, H.; Akasaki, I.; Schoenfeld, W.V.; Garcia, J.M.; Petroff, P.M.

2004-01-01

Optical properties of the quantum structures have been discussed with emphasize of the AlGaN/GaN multiple quantum wells and InAs/GaAs quantum dot structures. We report on a detailed study of low temperature photoluminescence in Al 0 .07Ga 0 .93 N/GaN multiple quantum wells. The structures were nominally undoped multiple quantum well grown on sapphire substrate. The structure from discrete well width variations is here resolved in photoluminescence spectra. The results demonstrate that the theoretically estimated fields in this work are consistent with the experimental spectra

Exciton lifetime and spin dynamics in type-I In1−xAlxAs/Ga0.67Al0.33As quantum dots: Photoluminescence and pump-probe experiments

International Nuclear Information System (INIS)

Ben Daly, A.; Bernardot, F.; Barisien, T.; Galopin, E.; Lemaître, A.; Maaref, M.A.; Testelin, C.

2015-01-01

The exciton lifetime and spin relaxation have been studied in self-assembled In 1−x Al x As/Ga 0.67 Al 0.33 As quantum dots (QDs). Time-resolved photoluminescence and resonant pump-probe measurements were performed, at variable temperature and for different QD aluminium compositions. At low temperature, a long exciton-spin relaxation time has been measured, in agreement with the QD zero-dimensional confinement and the quenching of the relaxation mechanisms. The existence of a quasi-2D regime, in sample with a high QD density, has been observed. The importance of thermally-activated processes toward excited states is also evidenced, for QDs with different compositions and sizes. - Highlights: • The exciton lifetime and spin relaxation have been studied in In 1−x Al x As/Ga 0.67 Al 0.33 As quantum dot (QD). • Time-resolved photoluminescence (TRPL) and pump-probe measurements were performed, at variable temperature and for different QD aluminium compositions. • From the PL decay time, several thermal activation processes, related to 0D or 2D regime, or dependending on collective mechanisms. • The importance of thermal activated processes toward excited states is also evidenced, for QD with different compositions and sizes

Excitonic behavior in self-assembled InAs/GaAs quantum rings in high magnetic fields

NARCIS (Netherlands)

Kleemans, N.A.J.M.; Blokland, J.H.; Taboada, A.G.; Genuchten, van H.C.M.; Bozkurt, M.; Fomin, V.M.; Gladilin, V.N.; Granados, D.; Garcia, J.M.; Christianen, P.C.M.; Maan, J.C.; Devreese, J.T.; Koenraad, P.M.

2009-01-01

We investigate the exciton energy level structure of a large ensemble of InAs/GaAs quantum rings by photoluminescence spectroscopy in magnetic fields up to 30 T for different excitation densities. The confinement of an electron and a hole in these type I quantum rings along with the Coulomb

Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

DEFF Research Database (Denmark)

Albert, F.; Stobbe, Søren; Schneider, C.

2010-01-01

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

DEFF Research Database (Denmark)

Albert, F.; Schneider, C.; Stobbe, Søren

2010-01-01

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

Photoluminescence investigation of type-II GaSb/GaAs quantum dots grown by liquid phase epitaxy

Science.gov (United States)

Wang, Yang; Hu, Shuhong; Xie, Hao; Lin, Hongyu; lu, Hongbo; Wang, Chao; Sun, Yan; Dai, Ning

2018-06-01

GaSb quantum dots (QDs) with an areal density of ∼1 × 1010 cm-2 are successfully grown by the modified (rapid slider) liquid phase epitaxy technique. The morphology of the QDs has been investigated by scanning electron microscope (SEM) and atom force microscope (AFM). The power-dependence and temperature-dependence photoluminescence (PL) spectra have been studied. The bright room-temperature PL suggests a good luminescence quality of GaSb QDs/GaAs matrix system. The type-II alignment of the GaSb QDs/GaAs matrix system is verified by the blue-shift of the QDs peak with the increase of excitation power. From the temperature-dependence PL spectra, the activation energy of QDs is determined to be 111 meV.

In-plane magneto-photoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells

Energy Technology Data Exchange (ETDEWEB)

KIM,YONGMIN; PERRY,C.H.; SIMMONS,JERRY A.; KLEM,JOHN F.

2000-05-11

In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.

Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

Science.gov (United States)

Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

2015-02-07

Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

Photoluminescence spectral study of single cadmium selenide/zinc sulfide colloidal nanocrystals in poly(methyl methacrylate) and quantum dots molecules

Science.gov (United States)

Shen, Yaoming

Quantum dots (QDs)and Nano-crystals (NCs) have been studies for decades. Because of the nanoscale quantum confinement, delta shape like energy density states and narrowband emitters properties, they hold great promise for numerous optoelectronics and photonics applications. They could be used for tunable lasers, white LED, Nano-OLED, non-volatile memory and solar cells. They are also the most promising candidates for the quantum computing. The benefits for NCs over QDs is that NCs can be incorporated into a variety of polymers as well as thin films of bulk semiconductors. These exceptional flexibility and structural control distinguish NCs from the more traditional QD structures fabricated using epitaxial growth techniques. In my research of work, I studied the photoluminescence (PL) and absorption character of ensemble NCs incorporated in Polymethyl methacrylate (PMMA). To understand the behavior of the NCs in PMMA, it is important to measure a singe NC to avoid the inhomogenous broading of many NCs. So I particularly studied the behavior of a single NC in PMMA matrix. A microphotoluminescence setup to optically isolate a single nanocrystal is used. Random spectral shift and blinking behavior (on and off) are found. Addition to that, two color spectral shifting, is a major phenomena found in the system. Other interesting results such as PL intensity changes (decreasing or increasing with time) and quenching effect are observed and explained too. From the correlation function, we can distinguish the phonon replicas. The energy of these phonons can be calculated very accurately from the experiment result. The Huang-Rhys factors can be estimated too. Self-assembled semiconductor quantum dots (QDs), from highly strained-layer heteroepitaxy in the Stranski-Krastanow (S-K) growth mode, have been intensively studied because of the delta-function-like density of states, which is significant for optoelectronic applications. Spontaneous formation of semiconductor quantum

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

Science.gov (United States)

Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

2013-03-22

We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

Facile synthetic method for pristine graphene quantum dots and graphene oxide quantum dots: origin of blue and green luminescence.

Science.gov (United States)

Liu, Fei; Jang, Min-Ho; Ha, Hyun Dong; Kim, Je-Hyung; Cho, Yong-Hoon; Seo, Tae Seok

2013-07-19

Pristine graphene quantum dots and graphene oxide quantum dots are synthesized by chemical exfoliation from the graphite nanoparticles with high uniformity in terms of shape (circle), size (less than 4 nm), and thickness (monolayer). The origin of the blue and green photoluminescence of GQDs and GOQDs is attributed to intrinsic and extrinsic energy states, respectively. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoluminescence spectra of n-doped double quantum wells in a parallel magnetic field

International Nuclear Information System (INIS)

Huang, D.; Lyo, S.K.

1999-01-01

We show that the photoluminescence (PL) line shapes from tunnel-split ground sublevels of n-doped thin double quantum wells (DQW close-quote s) are sensitively modulated by an in-plane magnetic field B parallel at low temperatures (T). The modulation is caused by the B parallel -induced distortion of the electronic structure. The latter arises from the relative shift of the energy-dispersion parabolas of the two quantum wells (QW close-quote s) in rvec k space, both in the conduction and valence bands, and formation of an anticrossing gap in the conduction band. Using a self-consistent density-functional theory, the PL spectra and the band-gap narrowing are calculated as a function of B parallel , T, and the homogeneous linewidths. The PL spectra from symmetric and asymmetric DQW close-quote s are found to show strikingly different behavior. In symmetric DQW close-quote s with a high density of electrons, two PL peaks are obtained at B parallel =0, representing the interband transitions between the pair of the upper (i.e., antisymmetric) levels and that of the lower (i.e., symmetric) levels of the ground doublets. As B parallel increases, the upper PL peak develops an N-type kink, namely a maximum followed by a minimum, and merges with the lower peak, which rises monotonically as a function of B parallel due to the diamagnetic energy. When the electron density is low, however, only a single PL peak, arising from the transitions between the lower levels, is obtained. In asymmetric DQW close-quote s, the PL spectra show mainly one dominant peak at all B parallel close-quote s. In this case, the holes are localized in one of the QW close-quote s at low T and recombine only with the electrons in the same QW. At high electron densities, the upper PL peak shows an N-type kink like in symmetric DQW close-quote s. However, the lower peak is absent at low B parallel close-quote s because it arises from the inter-QW transitions. Reasonable agreement is obtained with recent

Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

Energy Technology Data Exchange (ETDEWEB)

Mrowiński, P.; Misiewicz, J.; Sęk, G. [Laboratory for Optical Spectroscopy of Nanostructures, Division of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław (Poland); Tarnowski, K.; Olszewski, J.; Urbańczyk, W. [Division of Optics and Photonics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław (Poland); Somers, A.; Kamp, M. [Technische Physik & W. C. Röntgen-Center for Complex Material Systems, Universität Würzburg, Würzburg Germany (Germany); Reithmaier, J. P. [Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel (Germany); Machnikowski, P. [Division of Theoretical Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław (Poland)

2016-08-21

Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in terms of controlling the polarization anisotropy by altering the shape of the processed sub-micrometer mesa structures. Photoluminescence has been measured from exemplary single quantum dashes emitting around 1.3 and 1.55 μm and placed inside rectangular mesas of various orientation, asymmetry, and sizes. The detected degree of linear polarization of bright exciton emission ranges from −0.1 to ca. 0.55, compared to 0.25 for dashes in unaltered or isotropic in-plane dielectric surrounding. These results are interpreted by numerical simulations using an emitter coupled with a single optical mode in such a mesa and outgoing in the direction normal to the sample surface.

Bidentate Ligand-passivated CsPbI3 Perovskite Nanocrystals for Stable Near-unity Photoluminescence Quantum Yield and Efficient Red Light-emitting Diodes

KAUST Repository

Pan, Jun

2017-12-17

Although halide perovskite nanocrystals (NCs) are promising materials for optoelectronic devices, they suffer severely from chemical and phase instabilities. Moreover, the common capping ligands like oleic acid and oleylamine that encapsulate the NCs will form an insulating layer, precluding their utility in optoelectronic devices. To overcome these limitations, we develop a post-synthesis passivation process for CsPbI3 NCs by using a bidentate ligand, namely 2,2’-Iminodibenzoic acid. Our passivated NCs exhibit narrow red photoluminescence with exceptional quantum yield (close to unity) and substantially improved stability. The passivated NCs enabled us to realize red light-emitting diodes (LEDs) with 5.02% external quantum efficiency and 748 cd/m2 luminance, surpassing by far LEDs made from the non-passivated NCs.

Bidentate Ligand-passivated CsPbI3 Perovskite Nanocrystals for Stable Near-unity Photoluminescence Quantum Yield and Efficient Red Light-emitting Diodes

KAUST Repository

Pan, Jun; Shang, Yuequn; Yin, Jun; de Bastiani, Michele; Peng, Wei; Dursun, Ibrahim; Sinatra, Lutfan; El-Zohry, Ahmed M.; Hedhili, Mohamed N.; Emwas, Abdul-Hamid M.; Mohammed, Omar F.; Ning, Zhijun; Bakr, Osman

2017-01-01

Although halide perovskite nanocrystals (NCs) are promising materials for optoelectronic devices, they suffer severely from chemical and phase instabilities. Moreover, the common capping ligands like oleic acid and oleylamine that encapsulate the NCs will form an insulating layer, precluding their utility in optoelectronic devices. To overcome these limitations, we develop a post-synthesis passivation process for CsPbI3 NCs by using a bidentate ligand, namely 2,2’-Iminodibenzoic acid. Our passivated NCs exhibit narrow red photoluminescence with exceptional quantum yield (close to unity) and substantially improved stability. The passivated NCs enabled us to realize red light-emitting diodes (LEDs) with 5.02% external quantum efficiency and 748 cd/m2 luminance, surpassing by far LEDs made from the non-passivated NCs.

Photonic engineering of highly linearly polarized quantum dot emission at telecommunication wavelengths

Science.gov (United States)

Mrowiński, P.; Emmerling, M.; Schneider, C.; Reithmaier, J. P.; Misiewicz, J.; Höfling, S.; Sek, G.

2018-04-01

In this work, we discuss a method to control the polarization anisotropy of spontaneous emission from neutral excitons confined in quantum-dot-like nanostructures, namely single epitaxial InAs quantum dashes emitting at telecom wavelengths. The nanostructures are embedded inside lithographically defined, in-plane asymmetric photonic mesa structures, which generate polarization-dependent photonic confinement. First, we study the influence of the photonic confinement on the polarization anisotropy of the emission by photoluminescence spectroscopy, and we find evidence of different contributions to a degree of linear polarization (DOLP), i.e., from the quantum dash and the photonic mesa, in total giving rise to DOLP =0.85 . Then, we perform finite-difference time-domain simulations of photonic confinement, and we calculate the DOLP in a dipole approximation showing well-matched results for the established model. Furthermore, by using numerical calculations, we demonstrate several types of photonic confinements where highly linearly polarized emission with DOLP of about 0.9 is possible by controlling the position of a quantum emitter inside the photonic structure. Then, we elaborate on anisotropic quantum emitters allowing for exceeding DOLP =0.95 in an optimized case, and we discuss the ways towards efficient linearly polarized single photon source at telecom bands.

Microwave Synthesis of Nearly Monodisperse Core/Multishell Quantum Dots with Cell Imaging Applications

Directory of Open Access Journals (Sweden)

Xu Hengyi

2010-01-01

Full Text Available Abstract We report in this article the microwave synthesis of relatively monodisperse, highly crystalline CdSe quantum dots (QDs overcoated with Cd0.5Zn0.5S/ZnS multishells. The as-prepared QDs exhibited narrow photoluminescence bandwidth as the consequence of homogeneous size distribution and uniform crystallinity, which was confirmed by transmission electron microscopy. A high photoluminescence quantum yield up to 80% was measured for the core/multishell nanocrystals. Finally, the resulting CdSe/Cd0.5Zn0.5S/ZnS core/multishell QDs have been successfully applied to the labeling and imaging of breast cancer cells (SK-BR3.

Photoluminescence Detected Doublet Structure in the Integer and Fractional Quantum Hall Regime

International Nuclear Information System (INIS)

Kim, Yongmin; Munteanu, F.M.; Perry, C.H.; Reno, J.L.; Rickel, D.G.; Simmons, J.A.

1999-01-01

We present here the results of polarized magneto-photoluminescence measurements on a high mobility single-heterojunction. The presence of a doublet structure over a large magnetic field range (2>v>l/6) is interpreted as possible evidence for the existence of a magneto-roton minima of the charged density waves. This is understood as an indication of strong electronic correlation even in the case of the IQHE limit

Highly luminescent S,N co-doped carbon quantum dots-sensitized chemiluminescence on luminol-H2 O2 system for the determination of ranitidine.

Science.gov (United States)

Chen, Jianqiu; Shu, Juan; Chen, Jiao; Cao, Zhiran; Xiao, An; Yan, Zhengyu

2017-05-01

S,N co-doped carbon quantum dots (N,S-CQDs) with super high quantum yield (79%) were prepared by the hydrothermal method and characterized by transmission electron microscopy, photoluminescence, UV-Vis spectroscopy and Fourier transformed infrared spectroscopy. N,S-CQDs can enhance the chemiluminescence intensity of a luminol-H 2 O 2 system. The possible mechanism of the luminol-H 2 O 2 -(N,S-CQDs) was illustrated by using chemiluminescence, photoluminescence and ultraviolet analysis. Ranitidine can quench the chemiluminescence intensity of a luminol-H 2 O 2 -N,S-CQDs system. So, a novel flow-injection chemiluminescence method was designed to determine ranitidine within a linear range of 0.5-50 μg ml -1 and a detection limit of 0.12 μg ml -1 . The method shows promising application prospects. Copyright © 2016 John Wiley & Sons, Ltd.

Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy

International Nuclear Information System (INIS)

Chan, C.H.; Wu, J.D.; Huang, Y.S.; Hsu, H.P.; Tiong, K.K.; Su, Y.K.

2010-01-01

Photoluminescence (PL) and surface photovoltage spectroscopy (SPS) are used to characterize a series of highly strained In x Ga 1-x As/GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy with different indium compositions (0.395 ≤ x ≤ 0.44) in the temperature range of 20 K ≤ T ≤ 300 K. The PL features show redshift in peak positions and broadened lineshape with increasing indium composition. The S-shaped temperature dependent PL spectra have been attributed to carrier localization effect resulting from the presence of indium clusters at QW interfaces. A lineshape fit of features in the differential surface photovoltage (SPV) spectra has been used to determine the transition energies accurately. At temperature below 100 K, the light-hole (LH) related feature shows a significant phase difference as compared to that of heavy-hole (HH) related features. The phase change of the LH feature can be explained by the existence of type-II configuration for the LH valence band and the process of separation of carriers within the QWs together with possible capture by the interface defect traps. A detailed analysis of the observed phenomena enables the identification of spectral features and to evaluate the band lineup of the QWs. The results demonstrate the usefulness of PL and SPS for the contactless and nondestructive characterization of highly strained InGaAs/GaAs QW structures.

Photoluminescence of double core/shell infrared (CdSeTe)/ZnS quantum dots conjugated to Pseudo rabies virus antibodies

Science.gov (United States)

Torchynska, T. V.; Casas Espinola, J. L.; Jaramillo Gómez, J. A.; Douda, J.; Gazarian, K.

2013-06-01

Double core CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) have been studied by photoluminescence (PL) and Raman scattering methods in the non-conjugated state and after the conjugation to the Pseudo rabies virus (PRV) antibodies. The transformation of PL spectra, stimulated by the electric charge of antibodies, has been detected for the bioconjugated QDs. Raman scattering spectra are investigated with the aim to reveal the CdSeTe core compositions. The double core QD energy diagrams were designed that help to analyze the PL spectra and their transformation at the bioconjugation. It is revealed that the interface in double core QDs has the type II quantum well character that permits to explain the near IR optical transition (1.60 eV) in the double core QDs. It is shown that the essential transformation of PL spectra is useful for the study of QD bioconjugation with specific antibodies and can be a powerful technique in early medical diagnostics.

Nonradiative recombination in GaN quantum dots formed in the AlN matrix

International Nuclear Information System (INIS)

Aleksandrov, I. A.; Zhuravlev, K. S.; Mansurov, V. G.

2009-01-01

The mechanisms of temperature quenching of steady-state photoluminescence are studied for structures with hexagonal GaN quantum dots embedded in the AlN matrix. The structures are grown by molecular beam epitaxy. The study is conducted for structures with differently sized quantum dots, for which the peak of the photoluminescence band is in the range from 2.5 to 4.0 eV. It is found that the activation energy of thermal quenching of photoluminescence varies from 27 to 110 meV, as the quantum-dot height is decreased from 5 to 2 nm. A model is suggested to interpret the results. According to the model, the photo-luminescence signal is quenched because of the transfer of charge carriers from energy levels in the quantum dots to defect levels in the matrix.

Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs cylindrically shaped quantum dots

Energy Technology Data Exchange (ETDEWEB)

Duque, C.M.; Morales, A.L. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Mora-Ramos, M.E. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

2014-10-15

An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs.

InP quantum dots embedded in GaP: Optical properties and carrier dynamics

International Nuclear Information System (INIS)

Hatami, F.; Masselink, W.T.; Schrottke, L.; Tomm, J.W.; Talalaev, V.; Kristukat, C.; Goni, A.R.

2003-01-01

The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beam epitaxy forms quantum dots for InP coverage greater than 1.8 monolayers. Strong photoluminescence from the quantum dots is observed up to room temperature at about 2 eV; photoluminescence from the two-dimensional InP wetting layer is measured at about 2.2 eV. Modeling based on the 'model-solid theory' indicates that the band alignment for the InP quantum dots is direct and type I. Furthermore, low-temperature time-resolved photoluminescence measurements indicate that the carrier lifetime in the quantum dots is about 2 ns, typical for type-I quantum dots. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP quantum dots at normal pressure with the GaP X states lying about 30 meV higher than the Γ states in the InP quantum dots, but indicate that they become type II under hydrostatic pressures of about 1.2 GPa

Tunable photoluminescence of CsPbBr3 perovskite quantum dots for light emitting diodes application

Science.gov (United States)

Chen, Weiwei; Xin, Xing; Zang, Zhigang; Tang, Xiaosheng; Li, Cunlong; Hu, Wei; Zhou, Miao; Du, Juan

2017-11-01

All-inorganic cesium lead halide (CsPbBr3) perovskite quantum dots (QDs), as one kind of promising materials, have attracted considerable attention in optoelectronic applications. Herein, we synthesized the colloidal CsPbBr3 QDs with tunable photoluminescence (PL) (493-531 nm) by adjusting the reaction temperatures, which revealed narrow emission bandwidths of about 25 nm. The average diameters of the QDs could be adjusted from 7.1 to 12.3 nm as the temperature increased from 100 °C to 180 °C. Moreover, the radiative lifetimes of CsPbBr3 QDs were measured to be 2 ns, and the single QD fluorescence intensity time trace results demonstrated its suppressed blinking emission. Moreover, green light emitting diodes by using CsPbBr3 QDs casted on blue LED chips were further fabricated, which provided potential applications in the field of display and lighting technology.

Photoluminescence energy transitions in GaAs-Ga1-xAlxAs double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

International Nuclear Information System (INIS)

Lopez, S.Y.; Mora-Ramos, M.E.; Duque, C.A.

2009-01-01

The photoluminescence energy transitions in GaAs-Ga 1-x Al x As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Netzel, Carsten; Hoffmann, Veit; Wernicke, Tim; Knauer, Arne; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

2010-07-15

To determine relevant processes affecting the internal quantum efficiency in GaInN quantum well structures, we have studied the temperature and excitation power dependent photoluminescence intensity for quantum wells with different well widths on (0001) c-plane GaN and for quantum wells on nonpolar (11-20) a-plane GaN. In thick polar quantum wells, the quantum confined Stark effect (QCSE) causes a stronger intensity decrease with increasing temperature as long as the radiative recombination dominates. At higher temperatures, when the nonradiative recombination becomes more important, thick polar quantum wells feature a lower relative intensity decrease than thinner polar or nonpolar quantum wells. Excitation power dependent photoluminescence points to a transition from a recombination of excitons to a bimolecular recombination of uncorrelated charge carriers for thick polar quantum wells in the same temperature range. This transition might contribute to the limitation of nonradiative recombination by a reduced diffusivity of charge carriers. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A label-free silicon quantum dots-based photoluminescence sensor for ultrasensitive detection of pesticides.

Science.gov (United States)

Yi, Yinhui; Zhu, Gangbing; Liu, Chang; Huang, Yan; Zhang, Youyu; Li, Haitao; Zhao, Jiangna; Yao, Shouzhuo

2013-12-03

Sensitive, rapid, and simple detection methods for the screening of extensively used organophosphorus pesticides and highly toxic nerve agents are in urgent demand. A novel label-free silicon quantum dots (SiQDs)-based sensor was designed for ultrasensitive detection of pesticides. This sensing strategy involves the reaction of acetylcholine chloride (ACh) with acetylcholinesterase (AChE) to form choline that is in turn catalytically oxidized by choline oxidase (ChOx) to produce betaine and H2O2 which can quench the photoluminescence (PL) of SiQDs. Upon the addition of pesticides, the activity of AChE is inhibited, leading to the decrease of the generated H2O2, and hence the PL of SiQDs increases. By measuring the increase in SiQDs PL, the inhibition efficiency of pesticide to AChE activity was evaluated. It was found that the inhibition efficiency was linearly dependent on the logarithm of the pesticides concentration. Consequently, pesticides, such as carbaryl, parathion, diazinon, and phorate, were determined with the SiQDs PL sensing method. The lowest detectable concentrations for carbaryl, parathion, diazinon, and phorate reached 7.25 × 10(-9), 3.25 × 10(-8), 6.76 × 10(-8), and 1.9 × 10(-7) g/L, respectively, which were much lower than those previously reported. The detecting results of pesticide residues in food samples via this method agree well with those from high-performance liquid chromatography. The simple strategy reported here should be suitable for on-site pesticides detection, especially in combination with other portable platforms.

InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2003-01-01

-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour......Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum...

Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

Energy Technology Data Exchange (ETDEWEB)

Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

2011-03-15

The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

Science.gov (United States)

Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

2008-07-01

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

KYW{sub 2}O{sub 8}:Eu{sup 3+} – A closer look on its photoluminescence and structure

Energy Technology Data Exchange (ETDEWEB)

Schwung, Sebastian; Enseling, David [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstrasse 39, 48565 Steinfurt (Germany); Wesemann, Volker [Forschungsinstitut für mineralische und metallische Werkstoffe-Edelsteine/Edelmetalle-GmbH (FEE), Struthstrasse 2, 55743 Idar-Oberstein (Germany); Rytz, Daniel, E-mail: rytz@fee-io.de [Forschungsinstitut für mineralische und metallische Werkstoffe-Edelsteine/Edelmetalle-GmbH (FEE), Struthstrasse 2, 55743 Idar-Oberstein (Germany); Heying, Birgit; Rodewald, Ute Ch.; Gerke, Birgit; Niehaus, Oliver [Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30, D-48149 Münster (Germany); Pöttgen, Rainer, E-mail: pottgen@uni-muenster.de [Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30, D-48149 Münster (Germany); Jüstel, Thomas, E-mail: tj@fh-muenster.de [Fachbereich Chemieingenieurwesen, Fachhochschule Münster, Stegerwaldstrasse 39, 48565 Steinfurt (Germany)

2015-03-15

High-quality single crystals of partially europium-substituted KYW{sub 2}O{sub 8} (KYW) were grown by the top-seeded solution growth technique. The structures of four crystals with different europium content were refined on the basis of single crystal X-ray diffractometer data. The trivalent character of europium in these crystals was manifested through {sup 151}Eu Mössbauer spectra and magnetic susceptibility measurements. Moreover, reflection and photoluminescence spectra were recorded and from these spectra the quantum efficiency, lumen equivalent, and CIE1931 color point were calculated. It turned out that Eu{sup 3+} doped KYW is an efficient photoluminescent material at room temperature, while the thermal quenching temperature T{sub 1/2} is at about 633 K (360 °C), thus making the material a potential radiation converter for light emitting diodes. - Highlights: • Single crystalline K(Y,Eu)W{sub 2}O{sub 8} with different dopant levels. • Refined XRD data shows identical crystal structure for both types. • Thermal quenching behavior up to 800 K is measured. • Crystals show a high quantum efficiency.

Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

International Nuclear Information System (INIS)

Li Mi-Feng; Ni Hai-Qiao; Niu Zhi-Chuan; Ding Ying; David Bajek; Liang Kong; Ana Cataluna Maria

2014-01-01

The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 °C, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1 × 10 −6 Torr (1 Torr = 1.33322 × 10 2 Pa), provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a ∼ 19.7-GHz repetition rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Aqueous synthesis of high bright Ag{sub 2}Se−ZnSe quantum dots with tunable near-infrared emission

Energy Technology Data Exchange (ETDEWEB)

Che, Dongchen; Ding, Di [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Wang, Hongzhi, E-mail: wanghz@dhu.edu.cn [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Zhang, Qinghong [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201602 (China); Li, Yaogang, E-mail: yaogang_li@dhu.edu.cn [Engineering Research Center of Advanced Glass Manufacturing Technology, Ministry of Education, Donghua University, Shanghai 201602 (China)

2016-09-05

Efficient aqueous synthetic methods for near-infrared quantum dots as bioimaging agents are urgently required. In this work, a simple and fast synthesis of highly luminescent, near-infrared Ag{sub 2}Se quantum dots (QDs) in aqueous media is reported. The method avoids high temperature, pressure and organic solvents to directly generate water-dispersible Ag{sub 2}Se QDs. The photoluminescence emission of Ag{sub 2}Se QDs ranges from 835 to 940 nm by different Ag:Se molar ratio. Using the ZnSe as a shell, the quantum yield reaches up to 42%. The Ag{sub 2}Se−ZnSe QDs with high quantum yield, near-infrared and low cytotoxic could be used as good cell labels, showing great potential applications in bio-imaging. - Highlights: • Ag{sub 2}Se−ZnSe nanocrystals are prepared directly in aqueous media at low temperature. • Ag{sub 2}Se−ZnSe nanocrystals show excellent water solubility and colloidal stability. • Ag{sub 2}Se nanocrystals exhibit tunable near-infrared emission with ultrasmall size. • Ag{sub 2}Se−ZnSe nanocrystals show high quantum yield with low cytotoxicity. • Ag{sub 2}Se−ZnSe nanocrystals are stable over a month at room temperature in the air.

Polarized electrons, trions, and nuclei in charged quantum dots

Science.gov (United States)

Bracker, A. S.; Tischler, J. G.; Korenev, V. L.; Gammon, D.

2003-07-01

We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization of photoluminescence. Electrons and nuclei are polarized indirectly through subsequent relaxation processes. Polarized electrons are identified by the Hanle effect for exciton and trion photoluminescence, while polarized nuclei are identified through the Overhauser effect in individual charged quantum dots.

Near-infrared InN quantum dots on high-In composition InGaN

Energy Technology Data Exchange (ETDEWEB)

Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2013-04-01

We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

Dark-red-emitting CdTe0.5Se0.5/Cd0.5Zn0.5S quantum dots: Effect of chemicals on properties

International Nuclear Information System (INIS)

Yang, Ping; Zhang, Aiyu; Li, Xiaoyu; Liu, Ning; Zhang, Yulan; Zhang, Ruili

2013-01-01

CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution. - Graphical abstract: CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S quantum dots (QDs) with tunable photoluminescence, high PL efficiency, and high stability through organic synthesis, in which chemicals affected the properties of the QDs. Display Omitted - Highlights: • CdTe 0.5 Se 0.5 /Cd 0.5 Zn 0.5 S quantum dots created via organic synthesis. • Chemicals affected the properties of the quantum dots. • The quantum dots revealed high photoluminescence efficiency and stability. • The quantum dots with tunable photoluminescence in a range from yellow to dark red. • The QDs are utilizable for various applications such as biological labeling

Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes

International Nuclear Information System (INIS)

Schramm, A; Polojärvi, V; Hakkarainen, T V; Tukiainen, A; Guina, M

2011-01-01

We study effects of rapid thermal annealing on photoluminescence and electron confinement of InGaAs quantum posts by means of photoluminescence experiments and capacitance–voltage spectroscopy. The quantum posts are embedded in n-type Schottky diodes grown by molecular beam epitaxy on GaAs(1 0 0). The observed photoluminescence spectra arise from the quantum posts as well as from a contribution of a wetting-layer superlattice. With increasing annealing temperatures, the quantum-post photoluminescence blueshifts toward the wetting-layer superlattice, and upon the highest annealing step, the wetting-layer superlattice luminescence dominates. In capacitance–voltage experiments, we clearly observe a charge accumulation in the quantum-post layer as well as from the wetting-layer superlattice. Capacitance–voltage spectra and carrier-density profiles only experience slight changes upon annealing treatments. We suggest that the main electron accumulation takes place in the wetting-layer superlattice

Air-Stable Surface-Passivated Perovskite Quantum Dots for Ultra-Robust, Single- and Two-Photon-Induced Amplified Spontaneous Emission

KAUST Repository

Pan, Jun; Sarmah, Smritakshi P.; Banavoth, Murali; Dursun, Ibrahim; Peng, Wei; Parida, Manas R.; Liu, Jiakai; Sinatra, Lutfan; AlYami, Noktan; Zhao, Chao; Alarousu, Erkki; Ng, Tien Khee; Ooi, Boon S.; Bakr, Osman; Mohammed, Omar F.

2015-01-01

We demonstrate ultra-air- and photostable CsPbBr3 quantum dots (QDs) by using an inorganic–organic hybrid ion pair as the capping ligand. This passivation approach to perovskite QDs yields high photoluminescence quantum yield with unprecedented

Photoluminescence of 1,3-dimethyl pyrazoloquinoline derivatives

Energy Technology Data Exchange (ETDEWEB)

Koscien, E. [1st Liceum, Sobieskiego 22, 42-700 Lubliniec (Poland); Gondek, E.; Pokladko, M. [Institute of Physics, Technical University of Krakow, Podhorazych 1, 30-084 Krakow (Poland); Jarosz, B. [Department of Chemistry, Hugon Kollotaj Agricultural University, Al. Mickiewicza 24/28, 30-059 Krakow (Poland); Vlokh, R.O. [Institute of Physical Optics, Dragomanova 23, 79005 Lviv (Ukraine); Kityk, A.V. [Department of Electrical Engineering, Czestochowa University of Technology, Al. Armii Krajowej 17, 42-200 Czestochowa (Poland)], E-mail: kityk@ap.univie.ac.at

2009-04-15

This paper presents absorption and photoluminescence of 6-F, 6-Br, 6-Cl, 7-TFM and 6-COOEt derivatives of 1,3-dimethyl-1H-Pyrazolo[3,4-b]quinoline (DMPQ). The measured absorption and emission spectra are compared with the quantum chemical calculations performed by means of the semi-empirical methods (AM1 or PM3) that are applied either to the equilibrium conformations in vacuo (T = 0 K) or combined with the molecular dynamics simulations (T = 300 K). The spectra calculated by the AM1 method appear to be for all dyes in practically excellent agreement with the measured ones. In particular, the position of the first absorption band is obtained with the accuracy up to a few nanometers, whereas the calculated photoluminescence spectra predict the positions of the emission maxima for a gas phase with the accuracy up to 10-18 nm. The photoemission spectra of DMPQ dyes are considerably less solvatochromic comparing to phenyl-containing pyrazoloquinoline derivatives. According to the quantum chemical analysis the reason for such behaviour lies in a local character of the electronic transitions of DMPQ dyes which are characterized by a relatively small difference between the excited state and ground state dipole moments. Importantly that the rotational dynamics of both methyl subunits does not change this situation.

Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

Science.gov (United States)

Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

2000-01-01

The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

Energy Technology Data Exchange (ETDEWEB)

Liu, Ke; Ma, Wenquan, E-mail: wqma@semi.ac.cn; Huang, Jianliang; Zhang, Yanhua; Cao, Yulian; Huang, Wenjun; Luo, Shuai; Yang, Tao [Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, Beijing 100083 (China)

2015-07-27

We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.

Polarization-dependent photoluminescence studies of semipolar and nonpolar InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Schade, Lukas; Schwarz, Ulrich [IAF, Freiburg (Germany); Wernicke, Tim; Weyers, Markus [FBH, Berlin (Germany); Kneissl, Michael [FBH, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

2010-07-01

Light emitted from optical devices based on semi- and nonpolar GaN quantum well (QW) structures is partially or totally polarized, as a consequence of crystal symmetry and band structure. This can be an additional advantage over polar (0001)GaN in specific applications, e.g. in LED backlighting. Fundamentally, the polarized emission stems from breaking the isotropic symmetry of the hexagonal c-plane, resulting in two discrete semi- and nonpolar directions (parallel and normal to the projection of (0001)). We use the k.p method to simulate the crystal-direction dependent emission. The resulting transition matrix elements assign a specific (partial) polarization for each subband. The thermal occupation of the subbands results in a temperature dependent effective polarization of the light emission. We study MOVPE grown homoepitactical polar, semi- and nonpolar samples, measuring the polarization properties of the resonantly excited photoluminescence from the QW. With the complete polarization of the subbands for nonpolar devices it is possible to measure the energetic difference of the first two valence band levels. In contrast to our calculations we find a higher degree of polarization also in semipolar directions. A possible explanation could be a higher energetic subband difference than computed.

Observation of Diamond Nitrogen-Vacancy Center Photoluminescence under High Vacuum in a Magneto-Gravitational Trap

Science.gov (United States)

Ji, Peng; Hsu, Jen-Feng; Lewandowski, Charles W.; Dutt, M. V. Gurudev; D'Urso, Brian

2016-05-01

We report the observation of photoluminescence from nitrogen-vacancy (NV) centers in diamond nanocrystals levitated in a magneto-gravitational trap. The trap utilizes a combination of strong magnetic field gradients and gravity to confine diamagnetic particles in three dimensions. The well-characterized NV centers in trapped diamond nanocrystals provide an ideal built-in sensor to measure the trap magnetic field and the temperature of the trapped diamond nanocrystal. In the future, the NV center spin state could be coupled to the mechanical motion through magnetic field gradients, enabling in an ideal quantum interface between NV center spin and the mechanical motion. National Science Foundation, Grant No. 1540879.

Characterisation of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies

International Nuclear Information System (INIS)

Ivanov, Ts; Donchev, V; Angelova, T; Cros, A; Cantarero, A; Shtinkov, N; Borissov, K; Fuster, D; Gonzalez, Y; Gonzalez, L

2010-01-01

The optical properties of multi-layer InAs/InP quantum wires (QWRs) with two different spacer thicknesses have been investigated by means of room temperature surface photovoltage (SPV) and photoluminescence (PL) spectroscopies, combined with empirical tight binding electronic structure calculations and structural data. The SPV and PL spectra reveal several features, which energy positions are in good agreement. They have been ascribed to excitonic transitions, which take place in the QWR families with heights differing by an integer number of monolayers. Comparing the experimental results with the theoretical ones, we have estimated the QWR family heights and the average atomic concentration of phosphorus in the QWRs. From the simultaneous analysis of the SPV amplitude and phase spectra, based on our vector model for SPV signal representation, a deeper understanding of the SPV results and of the mechanisms of carrier separation in the sample is obtained.

Characterisation of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies

Science.gov (United States)

Ivanov, Ts; Donchev, V.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borissov, K.; Fuster, D.; González, Y.; González, L.

2010-11-01

The optical properties of multi-layer InAs/InP quantum wires (QWRs) with two different spacer thicknesses have been investigated by means of room temperature surface photovoltage (SPV) and photoluminescence (PL) spectroscopies, combined with empirical tight binding electronic structure calculations and structural data. The SPV and PL spectra reveal several features, which energy positions are in good agreement. They have been ascribed to excitonic transitions, which take place in the QWR families with heights differing by an integer number of monolayers. Comparing the experimental results with the theoretical ones, we have estimated the QWR family heights and the average atomic concentration of phosphorus in the QWRs. From the simultaneous analysis of the SPV amplitude and phase spectra, based on our vector model for SPV signal representation, a deeper understanding of the SPV results and of the mechanisms of carrier separation in the sample is obtained.

Cavity quantum electrodynamics in the Anderson-localized regime

DEFF Research Database (Denmark)

Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

2010-01-01

We experimentally measure, by means of time-resolved photoluminescence spectroscopy, a 15-fold enhancement of the spontaneous emission decay rate of single semiconductor quantum dots coupled to disorder-induced Anderson-localized modes with efficiencies reaching 94%.......We experimentally measure, by means of time-resolved photoluminescence spectroscopy, a 15-fold enhancement of the spontaneous emission decay rate of single semiconductor quantum dots coupled to disorder-induced Anderson-localized modes with efficiencies reaching 94%....

Highly Efficient Light-Emitting Diodes of Colloidal Metal-Halide Perovskite Nanocrystals beyond Quantum Size.

Science.gov (United States)

Kim, Young-Hoon; Wolf, Christoph; Kim, Young-Tae; Cho, Himchan; Kwon, Woosung; Do, Sungan; Sadhanala, Aditya; Park, Chan Gyung; Rhee, Shi-Woo; Im, Sang Hyuk; Friend, Richard H; Lee, Tae-Woo

2017-07-25

Colloidal metal-halide perovskite quantum dots (QDs) with a dimension less than the exciton Bohr diameter D B (quantum size regime) emerged as promising light emitters due to their spectrally narrow light, facile color tuning, and high photoluminescence quantum efficiency (PLQE). However, their size-sensitive emission wavelength and color purity and low electroluminescence efficiency are still challenging aspects. Here, we demonstrate highly efficient light-emitting diodes (LEDs) based on the colloidal perovskite nanocrystals (NCs) in a dimension > D B (regime beyond quantum size) by using a multifunctional buffer hole injection layer (Buf-HIL). The perovskite NCs with a dimension greater than D B show a size-irrespective high color purity and PLQE by managing the recombination of excitons occurring at surface traps and inside the NCs. The Buf-HIL composed of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and perfluorinated ionomer induces uniform perovskite particle films with complete film coverage and prevents exciton quenching at the PEDOT:PSS/perovskite particle film interface. With these strategies, we achieved a very high PLQE (∼60.5%) in compact perovskite particle films without any complex post-treatments and multilayers and a high current efficiency of 15.5 cd/A in the LEDs of colloidal perovskite NCs, even in a simplified structure, which is the highest efficiency to date in green LEDs that use colloidal organic-inorganic metal-halide perovskite nanoparticles including perovskite QDs and NCs. These results can help to guide development of various light-emitting optoelectronic applications based on perovskite NCs.

Aqueous synthesis of highly luminescent glutathione-capped Mn{sup 2+}-doped ZnS quantum dots

Energy Technology Data Exchange (ETDEWEB)

Kolmykov, Oleksii [Université de Lorraine, Laboratoire Réactions et Génie des Procédés (LRGP), UMR 7274, CNRS, 1 rue Grandville, BP 20451, 54001 Nancy Cedex (France); Coulon, Joël [Université de Lorraine, Laboratoire de Chimie Physique et Microbiologie pour l' Environnement (LCPME), UMR 7564, CNRS, Faculté de Pharmacie, 5 rue Albert Lebrun, 54000 Nancy (France); Lalevée, Jacques [Institut de Science des Matériaux de Mulhouse (IS2M), UMR 7361, CNRS, 15 rue Jean Starcky, 68093 Mulhouse (France); Alem, Halima; Medjahdi, Ghouti [Université de Lorraine, Institut Jean Lamour (IJL), UMR 7198, CNRS, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Schneider, Raphaël, E-mail: raphael.schneider@univ-lorraine.fr [Université de Lorraine, Laboratoire Réactions et Génie des Procédés (LRGP), UMR 7274, CNRS, 1 rue Grandville, BP 20451, 54001 Nancy Cedex (France)

2014-11-01

In this paper, an aqueous-based route has been developed to prepare highly luminescent glutathione (GSH)-capped Mn-doped ZnS quantum dots (QDs). The dots obtained have an average diameter of 4.3 nm and exhibit the Mn{sup 2+}-related orange luminescence with very low surface defect density. The highest photoluminescence was observed for a Mn{sup 2+} to Zn{sup 2+} molar ratio of 3%. Consecutive overcoating of the Mn:ZnS@GSH QDs by a ZnS shell was done, and the core/shell structured QDs exhibit a PL quantum yield of 23%. Transmission electron microscopy, X-ray powder diffraction, electron spin resonance, X-ray photoelectron spectroscopy, UV–visible spectroscopy and spectrofluorometry have been used to characterize the crystal structure, the doping status, and the optical properties of the doped-QDs. Our systematic investigation shows that Mn:ZnS/ZnS@GSH QDs are highly promising fluorescent labels in biological applications.

Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots

International Nuclear Information System (INIS)

Rihani, J.; Sedrine, N.B.; Sallet, V.; Oueslati, M.; Chtourou, R.

2008-01-01

InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 deg. C). With increasing excitation density, the ground-state transition energy is found to decrease by 8 meV, while the excited-state transition energies exhibit resonance behaviour. The redshift of the ground-state emission was related to the band-gap renomalization (BGR) effect whereas the blueshift of the excited-state emissions was assigned to the compensation between filling of fine structure states and BGR effects. Using a quasi-resonant PL measurement, we have shown that the renormalization of the band-gap had to occur in the QD barrier

Polytypism and band alignment in ZnSe nanowires revealed by photoluminescence spectroscopy of embedded (Zn,Cd)Se quantum dots

Science.gov (United States)

Bieker, S.; Pfeuffer, R.; Kiessling, T.; Tarakina, N.; Schumacher, C.; Ossau, W.; Molenkamp, L. W.; Karczewski, G.

2015-03-01

We report on the optical characterization of single (Zn,Cd)Se quantum dots (QDs) embedded in vapor-liquid-solid-grown ZnSe nanowires (NWs). The temperature dependent quenching of the QD luminescence demonstrates that their electronic structure is comparable to that of self-assembled (Zn,Cd)Se QDs in ZnSe matrices. The photoluminescence excitation (PLE) spectrum of single nanowire QDs reveals the presence of both zinc blende (ZB) and wurtzite (WZ) crystal modifications of ZnSe in the NW shafts. PLE provides, therefore, a complementary technique to transmission electron microscopy imaging to reveal polytypism in ZnSe NWs. A transient quenching of the PL emission suggests a type II staggered band alignment at the ZB/WZ interface in our ZnSe NWs.

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

KAUST Repository

Marcinkevičius, S.

2014-09-15

© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

Excitonic effects in the luminescence of quantum wells

International Nuclear Information System (INIS)

Deveaud, B.; Kappei, L.; Berney, J.; Morier-Genoud, F.; Portella-Oberli, M.T.; Szczytko, J.; Piermarocchi, C.

2005-01-01

We report on the origin of the excitonic luminescence in quantum wells. This study is carried out by time-resolved photoluminescence experiments performed on a very high-quality InGaAs quantum well sample in which the photoluminescence contributions at the energy of the exciton and at the band edge can be clearly separated and traced over a broad range of times and densities. This allows us to compare the two conflicting theoretical approaches to the question of the origin of the excitonic luminescence in quantum wells: the model of the exciton population and the model of the Coulomb correlated plasma. We measure the exciton formation time and we show the fast exciton formation and its dependence with carrier density. We are also able to give the boundaries of the Mott transition in our system, and to show the absence of observable renormalization of the gap below the onset of this transition. We detail the characteristics of the trion formation and evidence the possible formation of both positive and negative trions in the absence of any resident free carrier populations

Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer

Energy Technology Data Exchange (ETDEWEB)

Thunert, Martin; Wieneke, Matthias; Dempewolf, Anja; Bertram, Frank; Dadgar, Armin; Krost, Alois; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany)

2011-07-01

A set of InGaN multi quantum well (MQW) samples grown by MOVPE on highly Si doped a-plane GaN on r-plane sapphire templates has been investigated using spatially resolved photoluminescence spectroscopy ({mu}-PL). The Si doping level of nominal about 10{sup 20} cm{sup -3} leads to three dimensionally grown crystallites mostly terminated by m-facets. The MQW thickness has been systematically varied from nominally 2.1 to 4.2 nm, as well as the InGaN growth temperature, which was varied from 760 C to 700 C. The growth of a-plane GaN based devices leads to a non-polar growth direction avoiding the polarization field affected Quantum-Confined-Stark-Effect. Spatially resolved PL studies show for all samples low near band edge (NBE) GaN emission intensity over the whole area under investigation accompanied by highly intense InGaN MQW emission for single crystallites. The MQW luminescence shows a systematic blueshift with increasing InGaN growth temperature due to lower In incorporation as well as a systematic redshift with increasing MQW thickness. Excitation power dependent spectra at 4 K as well as temperature dependent PL spectra will be presented.

Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

International Nuclear Information System (INIS)

Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M.; Chen, D. D.; Xu, F.

2014-01-01

Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488 nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325 nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

Energy Technology Data Exchange (ETDEWEB)

Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S. [Department of Electronic Science, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

2014-01-28

A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of

A job for quantum dots: use of a smartphone and 3D-printed accessory for all-in-one excitation and imaging of photoluminescence.

Science.gov (United States)

Petryayeva, Eleonora; Algar, W Russ

2016-04-01

Point-of-care (POC) diagnostic technologies are needed to improve global health and smartphones are a prospective platform for these technologies. While many fluorescence or photoluminescence-based smartphone assays have been reported in the literature, common shortcomings are the requirement of an excitation light source external to the smartphone and complicated integration of that excitation source with the smartphone. Here, we show that the photographic flash associated with the smartphone camera can be utilized to enable all-in-one excitation and imaging of photoluminescence (PL), thus eliminating the need for an excitation light source external to the smartphone. A simple and low-cost 3D-printed accessory was designed to create a dark environment and direct excitation light from the smartphone flash onto a sample. Multiple colors and compositions of semiconductor quantum dot (QD) were evaluated as photoluminescent materials for all-in-one smartphone excitation and imaging of PL, and these were compared with fluorescein and R-phycoerythrin (R-PE), which are widely utilized molecular and protein materials for fluorescence-based bioanalysis. The QDs were found to exhibit much better brightness and have the best potential for two-color detection. A model protein binding assay with a sub-microgram per milliliter detection limit and a Förster resonance energy transfer (FRET) assay for proteolytic activity were demonstrated, including imaging with serum as a sample matrix. In addition, FRET within tandem conjugates of a QD donor and fluorescent dye acceptor enabled smartphone detection of dye fluorescence that was otherwise unobservable without the QD to enhance its brightness. The ideal properties of photoluminescent materials for all-in-one smartphone excitation and imaging are discussed in the context of several different materials, where QDs appear to be the best overall material for this application.

Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

CERN Document Server

Shim, B R; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, S Y

1999-01-01

We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In sub x Ga sub 1 sub - sub x As layers with x<= 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing...

Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

Science.gov (United States)

Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

2018-04-01

The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

GaSb quantum rings in GaAs/Al{sub x}Ga{sub 1−x}As quantum wells

Energy Technology Data Exchange (ETDEWEB)

Hodgson, P. D., E-mail: pdhodgson@hotmail.co.uk; Hayne, M.; Robson, A. J.; Zhuang, Q. D. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Danos, L. [Department of Chemistry, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2016-01-28

We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/Al{sub x}Ga{sub 1−x}As quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, single-particle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply charged with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation.

Photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

Energy Technology Data Exchange (ETDEWEB)

Lopez, S.Y. [Grupo de Educacion en Ciencias Experimentales y Matematicas-GECEM, Facultad de Educacion, Universidad de Antioquia, AA 1226 Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.c [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)

2009-12-15

The photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

Properties of CdSe quantum dots coated with silica fabricated in a facile way

International Nuclear Information System (INIS)

Liao Yufeng; Li Wenjiang; He Sailing

2007-01-01

High quality quantum dots (QDs) CdSe were prepared using a novel and non-TOP method. Quantum dots of different sizes ranging from 2 to 4 nm could be obtained by removing aliquots of the reaction solution at different time intervals or by adjusting some reaction conditions. The CdSe quantum dots (core) were directly coated with silica (shell) using a microemulsion method. The design and preparation of a model QD/silica was described and characterized using transmission electron microscopy (TEM), UV-vis absorption, photoluminescence and laser confocal scanning microscopy. TEM images confirmed the well-monodispersed QDs and the silica shell around the CdSe core, respectively; laser confocal microscope images, UV-vis absorption and photoluminescence spectra clearly indicated that both the original QDs and the silica-coated QDs had good fluorescence properties. The quantum dots coated with silica shells were stable, water-soluble and less toxic (due to the silica shells), and are anticipated to be used as fluorescent probes for biosensing and imaging applications

Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

International Nuclear Information System (INIS)

Bietti, S; Sanguinetti, S; Somaschini, C; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

2009-01-01

We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

Dark-red-emitting CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots: Effect of chemicals on properties

Energy Technology Data Exchange (ETDEWEB)

Yang, Ping, E-mail: mse_yangp@ujn.edu.cn; Zhang, Aiyu; Li, Xiaoyu; Liu, Ning; Zhang, Yulan; Zhang, Ruili

2013-08-15

CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution. - Graphical abstract: CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots (QDs) with tunable photoluminescence, high PL efficiency, and high stability through organic synthesis, in which chemicals affected the properties of the QDs. Display Omitted - Highlights: • CdTe{sub 0.5}Se{sub 0.5}/Cd{sub 0.5}Zn{sub 0.5}S quantum dots created via organic synthesis. • Chemicals affected the properties of the quantum dots. • The quantum dots revealed high photoluminescence efficiency and stability. • The quantum dots with tunable photoluminescence in a range from yellow to dark red. • The QDs are utilizable for various applications such as biological labeling.

Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

Energy Technology Data Exchange (ETDEWEB)

Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2009-12-15

This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

International Nuclear Information System (INIS)

Wagener, Viera; Olivier, E.J.; Botha, J.R.

2009-01-01

This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

Strong white photoluminescence from annealed zeolites

International Nuclear Information System (INIS)

Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

2014-01-01

The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

Lensless Photoluminescence Hyperspectral Camera Employing Random Speckle Patterns.

Czech Academy of Sciences Publication Activity Database

Žídek, Karel; Denk, Ondřej; Hlubuček, Jiří

2017-01-01

Roč. 7, č. 1 (2017), č. článku 15309. ISSN 2045-2322 R&D Projects: GA MŠk(CZ) LO1206; GA ČR(CZ) GJ17-26284Y Institutional support: RVO:61389021 Keywords : compressed sensing * photoluminescence imaging * laser speckles * single-pixel camera Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 4.259, year: 2016 https://www.nature.com/articles/s41598-017-14443-4

Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

International Nuclear Information System (INIS)

Hadj Alouane, M. H.; Ilahi, B.; Maaref, H.; Salem, B.; Aimez, V.; Morris, D.; Turala, A.; Regreny, P.; Gendry, M.

2010-01-01

We report on the effects of the As/P intermixing induced by phosphorus ion implantation in InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For nonintermixed QDas, usual temperature-dependent PL properties characterized by a monotonic redshift in the emission band and a continual broadening of the PL linewidth as the temperature increases, are observed. For intermediate ion implantation doses, the inhomogeneous intermixing enhances the QDas size dispersion and the enlarged distribution of carrier confining potential depths strongly affects the temperature-dependent PL properties below 180 K. An important redshift in the PL emission band occurs between 10 and 180 K which is explained by a redistribution of carriers among the different intermixed QDas of the ensemble. For higher implantation doses, the homogeneous intermixing reduces the broadening of the localized QDas state distribution and the measured linewidth temperature behavior matches that of the nonintermixed QDas. An anomalous temperature-dependent emission energy behavior has been observed for extremely high implantation doses, which is interpreted by a possible QDas dissolution.

Composition Screening in Blue-Emitting Li4Sr1+xCa0.97-x(SiO4)2:Ce3+ Phosphors for High Quantum Efficiency and Thermally Stable Photoluminescence.

Science.gov (United States)

Zhang, Jingchen; Zhang, Jilin; Zhou, Wenli; Ji, Xiaoyu; Ma, Wentao; Qiu, Zhongxian; Yu, Liping; Li, Chengzhi; Xia, Zhiguo; Wang, Zhengliang; Lian, Shixun

2017-09-13

Photoluminescence quantum efficiency (QE) and thermal stability are important for phosphors used in phosphor-converted light-emitting diodes (pc-LEDs). Li 4 Sr 1+x Ca 0.97-x (SiO 4 ) 2 :0.03Ce 3+ (-0.7 ≤ x ≤ 1.0) phosphors were designed from the initial model of Li 4 SrCa(SiO 4 ) 2 :Ce 3+ , and their single-phased crystal structures were found to be located in the composition range of -0.4 ≤ x ≤ 0.7. Depending on the substitution of Sr 2+ for Ca 2+ ions, the absolute QE value of blue-emitting composition-optimized Li 4 Sr 1.4 Ca 0.57 (SiO 4 ) 2 :0.03Ce 3+ reaches ∼94%, and the emission intensity at 200 °C remains 95% of that at room temperature. Rietveld refinements and Raman spectral analyses suggest the increase of crystal rigidity, increase of force constant in CeO 6 , and decrease of vibrational frequency by increasing Sr 2+ content, which are responsible for the enhanced quantum efficiency and thermal stability. The present study points to a new strategy for future development of the pc-LEDs phosphors based on local structures correlation via composition screening.

Optical pumping and negative luminescence polarization in charged GaAs quantum dots

Science.gov (United States)

Shabaev, Andrew; Stinaff, Eric A.; Bracker, Allan S.; Gammon, Daniel; Efros, Alexander L.; Korenev, Vladimir L.; Merkulov, Igor

2009-01-01

Optical pumping of electron spins and negative photoluminescence polarization are observed when interface quantum dots in a GaAs quantum well are excited nonresonantly by circularly polarized light. Both observations can be explained by the formation of long-lived dark excitons through hole spin relaxation in the GaAs quantum well prior to exciton capture. In this model, optical pumping of resident electron spins is caused by capture of dark excitons and recombination in charged quantum dots. Negative polarization results from accumulation of dark excitons in the quantum well and is enhanced by optical pumping. The dark exciton model describes the experimental results very well, including intensity and bias dependence of the photoluminescence polarization and the Hanle effect.

Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)

International Nuclear Information System (INIS)

Saxena, Shailendra K.; Rai, Hari. M.; Late, Ravikiran; Sagdeo, Pankaj R.; Kumar, Rajesh

2015-01-01

In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence

Highly Luminescent Water-Dispersible NIR-Emitting Wurtzite CuInS2/ZnS Core/Shell Colloidal Quantum Dots

NARCIS (Netherlands)

Xia, Chenghui; Meeldijk, Johannes D.; Gerritsen, Hans C.; De Mello Donega, Celso

2017-01-01

Copper indium sulfide (CIS) quantum dots (QDs) are attractive as labels for biomedical imaging, since they have large absorption coefficients across a broad spectral range, size- and composition-tunable photoluminescence from the visible to the near-infrared, and low toxicity. However, the

Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

Science.gov (United States)

Blenkhorn, W. E.; Schulz, S.; Tanner, D. S. P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.; Dawson, P.

2018-05-01

In this paper we report on changes in the form of the low temperature (12 K) photoluminescence spectra of an InGaN/GaN quantum well structure as a function of excitation photon energy. As the photon energy is progressively reduced we observe at a critical energy a change in the form of the spectra from one which is determined by the occupation of the complete distribution of hole localisation centres to one which is determined by the resonant excitation of specific localisation sites. This change is governed by an effective mobility edge whereby the photo-excited holes remain localised at their initial energy and are prevented from scattering to other localisation sites. This assignment is confirmed by the results of atomistic tight binding calculations which show that the wave function overlap of the lowest lying localised holes with other hole states is low compared with the overlap of higher lying hole states with other higher lying hole states.

Photoluminescence of hybrid quantum dot systems

Czech Academy of Sciences Publication Activity Database

Král, Karel; Menšík, Miroslav

2015-01-01

Roč. 7, č. 4 (2015), 347-349 ISSN 2164-6627 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * energy transfer * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism

Defect-mediated photoluminescence up-conversion in cadmium sulfide nanobelts (Conference Presentation)

Science.gov (United States)

Morozov, Yurii; Kuno, Masaru K.

2017-02-01

The concept of optical cooling of solids has existed for nearly 90 years ever since Pringsheim proposed a way to cool solids through the annihilation of phonons via phonon-assisted photoluminescence (PL) up-conversion. In this process, energy is removed from the solid by the emission of photons with energies larger than those of incident photons. However, actually realizing optical cooling requires exacting parameters from the condensed phase medium such as near unity external quantum efficiencies as well as existence of a low background absorption. Until recently, laser cooling has only been successfully realized in rare earth doped solids. In semiconductors, optical cooling has very recently been demonstrated in cadmium sulfide (CdS) nanobelts as well as in hybrid lead halide perovskites. For the former, large internal quantum efficiencies, sub-wavelength thicknesses, which decrease light trapping, and low background absorption, all make near unity external quantum yields possible. Net cooling by as much as 40 K has therefore been possible with CdS nanobelts. In this study, we describe a detailed investigation of the nature of efficient anti-Stokes photoluminescence (ASPL) in CdS nanobelts. Temperature-dependent PL up-conversion and optical absorption studies on individual NBs together with frequency-dependent up-converted PL intensity spectroscopies suggest that ASPL in CdS nanobelts is defect-mediated through involvement of defect levels below the band gap.

Photoluminescence of colloidal CdSe nano-tetrapods and quantum dots in oxygenic and oxygen-free environments

Energy Technology Data Exchange (ETDEWEB)

Zhao, Lijuan [Donghua University, Applied Physics Department, Shanghai (China); Hong Kong University of Science and Technology, Physics Department and the Institute of Nano-Science and Technology, Hong Kong (China); Pang, Qi; Ge, Weikun; Wang, Jiannong [Hong Kong University of Science and Technology, Physics Department and the Institute of Nano-Science and Technology, Hong Kong (China); Yang, Shihe [Hong Kong University of Science and Technology, Chemistry Department and the Institute of Nano-Science and Technology, Hong Kong (China)

2011-05-15

The effects of oxygenic versus oxygen-free environments on colloidal CdSe nano-tetrapods and quantum dots (QDs) were studied using both continuous and time-resolved photoluminescence (PL) measurements. The decays of PL intensities for tetrapods and QDs in oxygen-free solution (chloroform) and in air (on silicon) can be well fitted by a bi-exponential function. Based on the emission-energy dependence of carrier lifetimes and the amplitude ratio of the fast-decay component to the slow-decay component, the fast and slow PL decays of CdSe nanocrystals are attributed to the recombination of delocalized carriers in the core states and localized carriers in the surface states, respectively. The PL intensities of CdSe nano-tetrapods and QDs were found to be five times and an order of magnitude higher in air than in vacuum, respectively, which is explained by the passivation of surface defects by the polar gas (oxygen) absorption. The lower enhancement in PL intensities of CdSe nano-tetrapods is explained by the special morphology of the tetrapods. (orig.)

The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100)

International Nuclear Information System (INIS)

Hakkarainen, T V; Polojärvi, V; Schramm, A; Tommila, J; Guina, M

2012-01-01

We report on the effect of post-growth thermal annealing of [011]-, [01 1-bar ]-, and [010]-oriented quantum dot chains grown by molecular beam epitaxy on GaAs(100) substrates patterned by UV-nanoimprint lithography. We show that the quantum dot chains experience a blueshift of the photoluminescence energy, spectral narrowing, and a reduction of the intersubband energy separation during annealing. The photoluminescence blueshift is more rapid for the quantum dot chains than for self-assembled quantum dots that were used as a reference. Furthermore, we studied polarization resolved photoluminescence and observed that annealing reduces the intrinsic optical anisotropy of the quantum dot chains and the self-assembled quantum dots. (paper)

Optical Spectroscopy Of Charged Quantum Dot Molecules

Science.gov (United States)

Scheibner, M.; Bracker, A. S.; Stinaff, E. A.; Doty, M. F.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2007-04-01

Coupling between two closely spaced quantum dots is observed by means of photoluminescence spectroscopy. Hole coupling is realized by rational crystal growth and heterostructure design. We identify molecular resonances of different excitonic charge states, including the important case of a doubly charged quantum dot molecule.

Photoluminescence excitation measurements using pressure-tuned laser diodes

Science.gov (United States)

Bercha, Artem; Ivonyak, Yurii; Medryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

2015-06-01

Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

Photoluminescence excitation measurements using pressure-tuned laser diodes

International Nuclear Information System (INIS)

Bercha, Artem; Ivonyak, Yurii; Mędryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

2015-01-01

Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available

Quantum well effect in bulk PbI(2) crystals revealed by the anisotropy of photoluminescence and Raman spectra.

Science.gov (United States)

Baltog, I; Baibarac, M; Lefrant, S

2009-01-14

On subjecting a bulk 2H-PbI(2) crystal to vacuum annealing at 500 K followed by a sudden cooling at liquid nitrogen temperature stacking faults are generated that separate distinct layers of nanometric thickness in which different numbers of I-Pb-I atomic layers are bundled together. Such structures, containing two, three, four, five etc I-Pb-I atomic layers, behave as quantum wells of different widths. The signature of such a transformation is given by a shift towards higher energies of the fundamental absorption edge, which is experimentally revealed by specific anisotropies in the photoluminescence and Raman spectra. The quantum confining effect is made visible by specific variations of a wide extra-excitonic band (G) at 2.06 eV that originates in the radiative recombination of carriers (electrons and holes), trapped on the surface defects. The excitation spectrum of the G band, with p polarized exciting light, reveals a fine structure comprised of narrow bands at 2.75, 2.64, 2.59 and 2.56 eV, which are associated with the PbI(2) quantum wells formed from two, three, four and five I-Pb-I atomic layers of 0.7 nm thickness. Regardless of the polarization state of the laser exciting light of 514.5 nm (2.41 eV), which is close to the band gap energy of PbI(2) (2.52 eV), the Raman scattering on bulk as-grown PbI(2) crystals has the character of a resonant process. For p polarized exciting light, the Raman scattering process on vacuum annealed PbI(2) becomes non-resonant. This originates from the quantum well structures generated inside the crystal, whose band gap energies are higher than the energy of the exciting light.

High-dimensional quantum cloning and applications to quantum hacking.

Science.gov (United States)

Bouchard, Frédéric; Fickler, Robert; Boyd, Robert W; Karimi, Ebrahim

2017-02-01

Attempts at cloning a quantum system result in the introduction of imperfections in the state of the copies. This is a consequence of the no-cloning theorem, which is a fundamental law of quantum physics and the backbone of security for quantum communications. Although perfect copies are prohibited, a quantum state may be copied with maximal accuracy via various optimal cloning schemes. Optimal quantum cloning, which lies at the border of the physical limit imposed by the no-signaling theorem and the Heisenberg uncertainty principle, has been experimentally realized for low-dimensional photonic states. However, an increase in the dimensionality of quantum systems is greatly beneficial to quantum computation and communication protocols. Nonetheless, no experimental demonstration of optimal cloning machines has hitherto been shown for high-dimensional quantum systems. We perform optimal cloning of high-dimensional photonic states by means of the symmetrization method. We show the universality of our technique by conducting cloning of numerous arbitrary input states and fully characterize our cloning machine by performing quantum state tomography on cloned photons. In addition, a cloning attack on a Bennett and Brassard (BB84) quantum key distribution protocol is experimentally demonstrated to reveal the robustness of high-dimensional states in quantum cryptography.

Carrier dynamics in submonolayer InGaAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Zhang, Yating; Hvam, Jørn Märcher

2006-01-01

Carrier dynamics of submonolayer InGaAs/GaAs quantum dots (QDs) were studied by microphotoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon...

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Birkedal, Dan; Hvam, Jørn Märcher

2003-01-01

A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki-Taupin...

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

KAUST Repository

Muhammed, Mufasila

2017-09-11

We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

KAUST Repository

Muhammed, Mufasila; Alwadai, Norah Mohammed Mosfer; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S.

2017-01-01

We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

Fabrication of GaAs concentric multiple quantum rings by droplet epitaxy

International Nuclear Information System (INIS)

Somaschini, C; Bietti, S; Sanguinetti, S; Koguchi, N; Fedorov, A; Abbarchi, M; Gurioli, M

2009-01-01

We present the fabrication of a novel quantum nanostructure, constituted by three concentric quantum rings by droplet epitaxy. Atomic Force Microscopy and photoluminescence characterization of these nanostructures is reported.

Origins of efficient green light emission in phase-separated InGaN quantum wells

International Nuclear Information System (INIS)

Lai, Y-L; Liu, C-P; Lin, Y-H; Hsueh, T-H; Lin, R-M; Lyu, D-Y; Peng, Z-X; Lin, T-Y

2006-01-01

Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516 nm) and the InGaN matrix (450 nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511 meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341 meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission

Photoluminescence and structural properties of CdSe quantum dot–gelatin composite films

Energy Technology Data Exchange (ETDEWEB)

Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Gudymenko, O.; Kladko, V. [V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauky 41, 03028 Kyiv (Ukraine); Stroyuk, O.; Raevskaya, A. [L. Pysarzhevsky Institute of Physical Chemistry of NAS of Ukraine, Pr. Nauky 31, 03028 Kyiv (Ukraine); Kryshtab, T. [Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9 U.P.A.L.M., 07738 Mexico D.F. (Mexico)

2014-11-15

Optical and structural properties of composite films of CdSe quantum dots (QDs) embedded in gelatin matrix have been investigated by photoluminescence (PL), optical absorption and X-ray diffraction (XRD) methods. The optical absorption of the composite in the visible spectral range is found to be determined mainly by light absorption in the QDs. The decrease of the film transparency and the shift of the absorption edge to lower energies observed upon thermal annealing of the films at 140–160 °C are ascribed to the formation of chromophore groups in gelatin matrix. XRD patterns of the composite revealed helix to coil transition in gelatin matrix under thermal annealing of the composite at 100–160 °C. It is found that PL spectra of the composite are dominated by exciton and defect-related emission of the QDs and also contain weak emission of gelatin matrix. It is found that thermal annealing of the composite at 100–160 °C changes PL intensity and produces the shift of the PL bands to lower energies. As the annealed composite was kept in air for several months, the shift of exciton-related PL band position restored partially and the PL intensity increased. It is proposed that the increase of the PL intensity upon the thermal annealing of composite at 140 °C can be used for enhancement of the QD-related PL. Changes that occurred in the PL spectra of composite are ascribed to structural and chemical transformations in gelatin matrix and at the QD/gelatin interface.

Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

International Nuclear Information System (INIS)

Joo, Jinmyoung; Defforge, Thomas; Gautier, Gael; Loni, Armando; Kim, Dokyoung; Sailor, Michael J.; Li, Z. Y.; Canham, Leigh T.

2016-01-01

The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals ( 32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

Enzyme biosensor systems based on porous silicon photoluminescence for detection of glucose, urea and heavy metals.

Science.gov (United States)

Syshchyk, Olga; Skryshevsky, Valeriy A; Soldatkin, Oleksandr O; Soldatkin, Alexey P

2015-04-15

A phenomenon of changes in photoluminescence of porous silicon at variations in medium pH is proposed to be used as a basis for the biosensor system development. The method of conversion of a biochemical signal into an optical one is applied for direct determination of glucose and urea as well as for inhibitory analysis of heavy metal ions. Changes in the quantum yield of porous silicon photoluminescence occur at varying pH of the tested solution due to the enzyme-substrate reaction. When creating the biosensor systems, the enzymes urease and glucose oxidase (GOD) were used as a bioselective material; their optimal concentrations were experimentally determined. It was shown that the photoluminescence intensity of porous silicon increased by 1.7 times when increasing glucose concentration in the GOD-containing reaction medium from 0 to 3.0mM, and decreased by 1.45 times at the same increase in the urea concentration in the urease-containing reaction medium. The calibration curves of dependence of the biosensor system responses on the substrate concentrations are presented. It is shown that the presence of heavy metal ions (Cu(2+), Pb(2+), and Cd(2+)) in the tested solution causes an inhibition of the enzymatic reactions catalyzed by glucose oxidase and urease, which results in a restoration of the photoluminescence quantum yield of porous silicon. It is proposed to use this effect for the inhibitory analysis of heavy metal ions. Copyright © 2014 Elsevier B.V. All rights reserved.

Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Schade, L.; Schwarz, U.T. [Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79108 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, 79108 Freiburg (Germany); Wernicke, T. [Institute of Solid State Physics, Technical University, Hardenbergstrasse 36, 10623 Berlin (Germany); Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technical University, Hardenbergstrasse 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany)

2011-03-15

Partial or full linear polarization is characteristic for the spontaneous emission of light from semipolar and nonpolar InGaN quantum wells. This property is an implication of the crystalline anisotropy as a basic property of the wurtzite structure. The influence of this anisotropy on the band structure and the transition matrix elements was calculated by a k.p-method for arbitrary quantum well orientations with respect to the c-axis; results are shown here in detail. Optical polarization is a direct consequence of a broken symmetry, mainly affecting the transition matrix elements from the conduction to the valence bands. Furthermore, the strain of the InGaN quantum well strongly depends on the crystal orientation of the substrate, resulting in a valence band mixing. The composition of the eigenfunctions has emerged to be most important for the polarization dependence of strained semipolar and nonpolar InGaN QW. The matrix elements, in combination with the thermal occupation of the bands, determine the polarization of the spontaneously emitted light. Our photoluminescence measurements of nonpolar QW match well with this model. However, in contrast to calculations with standard band parameters, the two topmost subbands show a larger separation in the emitted energy. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Shape-engineered epitaxial InGaAs quantum rods for laser applications

International Nuclear Information System (INIS)

Li, L. H.; Ridha, P.; Chauvin, N.; Fiore, A.; Patriarche, G.

2008-01-01

We apply artificial shape engineering of epitaxial semiconductor nanostructures to demonstrate InGaAs quantum rods (QRs), nanocandles, and quantum dots-in-rods on a GaAs substrate. The evolution of the QRs from a zero-dimensional to one-dimensional confinement is evidenced by systematically measuring the photoluminescence and photoluminescence decay as a function of the rod length. Lasers based on a three-stack QR active region are demonstrated at room temperature, validating the applicability of the QRs in the real devices

Evidence for possible quantum dot interdiffusion induced by cap layer growth

International Nuclear Information System (INIS)

Jasinski, J.; Czeczott, M.; Gladysz, A.; Babinski, A.; Kozubowski, J.

1999-01-01

Self-organised InGaAs quantum dots were grown on (001) GaAs substrates and covered with two different types of cap layers grown at significantly different temperatures. In order to determine quantum dot emission energy and dot size distribution, photoluminescence and transmission electron microscopy studies were carried out on such samples. Simple theoretical model neglecting effect of interdiffusion allowed for correlation between quantum dot size and photoluminescence emission energy only in the case of dots covered by cap layers grown at the lower temperature. For dots covered by layers grown at the higher temperature such correlation was possible only when strong interdiffusion was assumed. (author)

Spin interactions in InAs quantum dots

Science.gov (United States)

Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2006-03-01

Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

Assessment of quantum dots concentrators for photovoltaic electricity production; Evaluation du potentiel de concentrateurs a quantum dots pour la production d'electricite photovoltaique. Rapport final

Energy Technology Data Exchange (ETDEWEB)

Schueler, A; Kostro, A; Huriet, B

2006-07-01

One of the most promising application of semiconductor nanostructures in the field of photovoltaics might be planar photoluminescent concentrators. Even for diffuse solar radiation, considerable concentration factors might be achieved. Such devices have originally been designed on the basis of organic dyes and might benefit from a considerably improved lifetime when replacing the organic fluorescent substances by inorganic semiconductor nanocrystals, so-called quantum dots. Quantum dot containing nanocomposite thin films are synthesized at EPFL-LESO by a low cost sol-gel process. In order to study the potential of the use of quantum dot solar concentrators in photovoltaic solar energy conversion, reliable computer simulations are needed. A tool for ray tracing simulations of quantum dot solar concentrators has been developed at EPFL-LESO on the basis of Monte-Carlo methods that are applied to polarization-dependent reflection/transmission at interfaces, photon absorption by the semiconductor nanocrystals and photoluminescent re-emission. Together with the knowledge on the optoelectronical properties of suitable photovoltaic cells, such simulations allow to predict the total efficiency of the envisaged concentrating PV systems, and to optimize pane dimensions, photoluminescent emission frequencies, and choice of PV cell types. (author)

A Review of the Synthesis and Photoluminescence Properties of Hybrid ZnO and Carbon Nanomaterials

Directory of Open Access Journals (Sweden)

Protima Rauwel

2016-01-01

Full Text Available Photoluminescent ZnO carbon nanomaterials are an emerging class of nanomaterials with unique optical properties. They each, ZnO and carbon nanomaterials, have an advantage of being nontoxic and environmentally friendly. Their cost-effective production methods along with simple synthesis routes are also of interest. Moreover, ZnO presents photoluminescence emission in the UV and visible region depending on the synthesis routes, shape, size, deep level, and surface defects. When combined with carbon nanomaterials, modification of surface defects in ZnO allows tuning of these photoluminescence properties to produce, for example, white light. Moreover, efficient energy transfer from the ZnO to carbon nanostructures makes them suitable candidates not only in energy harvesting applications but also in biosensors, photodetectors, and low temperature thermal imaging. This work reviews the synthesis and photoluminescence properties of 3 carbon allotropes: carbon quantum or nanodots, graphene, and carbon nanotubes when hybridized with ZnO nanostructures. Various synthesis routes for the hybrid materials with different morphologies of ZnO are presented. Moreover, differences in photoluminescence emission when combining ZnO with each of the three different allotropes are analysed.

Fast synthesize ZnO quantum dots via ultrasonic method.

Science.gov (United States)

Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

2016-05-01

Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, Kristjan; Birkedal, Dan

2002-01-01

We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction....

Characteristics and performance of the Sunna high dose dosemeter using green photoluminescence and UV absorption readout methods

Energy Technology Data Exchange (ETDEWEB)

Miller, S.D.; Murphy, M.K.; Tinker, M.R.; Kovacs, A.; McLaughlin, W

2002-07-01

Growth in the use of ionising radiation for medical sterilisation and the potential for wide-scale international food irradiation have created the need for robust, mass-producible, inexpensive, and highly accurate radiation dosemeters. The Sunna dosemeter, lithium fluoride injection-moulded in a polyethylene matrix, can be read out using either green photoluminescence or ultraviolet (UV) absorption. The Sunna dosemeter can be mass-produced inexpensively with high precision. Both the photoluminescent and the UV absorption reader are simple and inexpensive. Both methods of analysis display negligible humidity effects, minimal dose rate dependence, acceptable post-irradiation effects, and permit measurements with a precision of nearly 1% 1s. The UV method shows negligible irradiation temperature effects from -30 deg. C to +60 deg. C. The photoluminescence method shows negligible irradiation temperature effects above room temperature for sterilisation dose levels and above. The dosimetry characteristics of these two readout methods are presented along with performance data in commercial sterilisation facilities. (author)

Germanium nanoislands grown by radio frequency magnetron sputtering: Annealing time dependent surface morphology and photoluminescence

International Nuclear Information System (INIS)

Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Amjad, R. J.

2013-01-01

Structural and optical properties of ∼ 20 nm Ge nanoislands grown on Si(100) by radio frequency (rf) magnetron sputtering under varying annealing conditions are reported. Rapid thermal annealing at a temperature of 600°C for 30 s, 90 s, and 120 s are performed to examine the influence of annealing time on the surface morphology and photoluminescence properties. X-ray diffraction spectra reveal prominent Ge and GeO 2 peaks highly sensitive to the annealing time. Atomic force microscope micrographs of the as-grown sample show pyramidal nanoislands with relatively high-density 10 11 cm −2) ). The nanoislands become dome-shaped upon annealing through a coarsening process mediated by Oswald ripening. The room temperature photoluminescence peaks for both as-grown 3.29 eV) and annealed 3.19 eV) samples consist of high intensity and broad emission, attributed to the effect of quantum confinement. The red shift (∼0.10 eV) of the emission peak is attributed to the change in the size of the Ge nanoislands caused by annealing. Our easy fabrication method may contribute to the development of Ge nanostructure-based optoelectronics. (interdisciplinary physics and related areas of science and technology)

Localized surface plasmon resonance enhanced photoluminescence of CdSe QDs in PMMA matrix on silver colloids with different shapes

International Nuclear Information System (INIS)

Lu Liu; Xu Xiaoliang; Shi Chaoshu; Ming Hai

2010-01-01

Localized surface plasmon resonance (LSPR) enhanced photoluminescences (PL) from CdSe quantum dots (QDs) on worm-like or quasi-spherical silver colloids have been investigated. The shape of silver colloid film is controlled by annealing temperature (200 o C∼350 o C). Strong PL enhancements of CdSe QDs on both as-grown and annealed silver colloid films are observed. The results show that the PL enhancement factor of CdSe QDs on worm-like silver colloid film reaches as high as 15-fold. Moreover, the enhancement factor is 5 times larger than that obtained from the quasi-spherical silver colloids. The superiority of worm-like silver nanostructure on LSPR enhanced photoluminescence is attributed to its larger size, hot spots and multiple dipole resonance modes coupling, which are induced by aggregation effect.

Modulation of the photoluminescence in carbon dots through surface modification: from mechanism to white light-emitting diodes

Science.gov (United States)

Zhu, Jinyang; Shao, He; Bai, Xue; Zhai, Yue; Zhu, Yongsheng; Chen, Xu; Pan, Gencai; Dong, Biao; Xu, Lin; Zhang, Hanzhuang; Song, Hongwei

2018-06-01

Carbon dots (CDs) have emerged as a new type of fluorescent material because of their unique optical advantages, such as high photoluminescence quantum yields (QYs), excellent photo-stability, excitation-dependent emissions, and low toxicity. However, the photoluminescence mechanism for CDs remains unclear, which limits their further practical application. Here, CDs were synthesized via a solvothermal route from citric acid and urea. Through the oxidation and reduction treatment of pristine CDs, the origin of the photoluminescence and the involved mechanism were revealed. We found that the blue/green/red emissions originated from three diverse emitting states, i.e. the intrinsic state, and C=O- and C=N-related surface states, respectively. Based on the as-prepared CDs, a pH sensor depending on the radiometric luminescence detection was developed. Furthermore, we constructed CD/PVP (PVP, polyvinylpyrrolidone) composite films, which exhibited white light emission with photoluminescence QYs of 15.3%. The white light emission with different correlated color temperatures (CCTs), from 4807 K to 3319 K, was obtained by simply changing the amount of PVP solution. Benefiting from the white light-emitting solid-state films, single-component white light-emitting diodes were fabricated with an average color rendering index value (Ra) of 80.0, luminous efficiency of 10.2 lm W‑1, and good working stability, thus indicating a promising potential for practical lighting applications.

Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

International Nuclear Information System (INIS)

Torres-Torres, C.; García-Cruz, M.L.; Castañeda, L.; Rangel Rojo, R.; Tamayo-Rivera, L.; Maldonado, A.; Avendaño-Alejo, M.

2012-01-01

Chromium doped zinc oxide thin solid films were deposited on soda–lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol–gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: ► Enhancement in photoluminescence for chromium doped zinc oxide films is presented. ► A strong and ultrafast optical Kerr effect seems to result from quantum confinement. ► Photoconductive properties for optical and optoelectronic functions were observed.

Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Torres-Torres, C., E-mail: crstorres@yahoo.com.mx [Seccion de Estudios de Posgrado e Investigacion, ESIME-Z, Instituto Politecnico Nacional, Mexico, DF 07738 (Mexico); Garcia-Cruz, M.L. [Centro de Investigacion en Dispositivos Semiconductores, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Castaneda, L., E-mail: luisca@sirio.ifuap.buap.mx [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Rangel Rojo, R. [CICESE/Depto. de Optica, A. P. 360, Ensenada, BC 22860 (Mexico); Tamayo-Rivera, L. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Mexico, DF 01000 (Mexico); Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN-SEES, A. P. 14740, Mexico DF 07000 (Mexico); Avendano-Alejo, M., E-mail: imax_aa@yahoo.com.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, A. P. 70-186, 04510, DF (Mexico); and others

2012-04-15

Chromium doped zinc oxide thin solid films were deposited on soda-lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol-gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: Black-Right-Pointing-Pointer Enhancement in photoluminescence for chromium doped zinc oxide films is presented. Black-Right-Pointing-Pointer A strong and ultrafast optical Kerr effect seems to result from quantum confinement. Black-Right-Pointing-Pointer Photoconductive properties for optical and optoelectronic functions were observed.

Photoluminescence as a tool for characterizing point defects in semiconductors

Science.gov (United States)

Reshchikov, Michael

2012-02-01

Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

Assessment of quantum dots concentrators for photovoltaic electricity production; Evaluation du potentiel de concentrateurs a quantum dots pour la production d'electricite photovoltaique. Rapport final

Energy Technology Data Exchange (ETDEWEB)

Schueler, A.; Kostro, A.; Huriet, B.

2006-07-01

One of the most promising application of semiconductor nanostructures in the field of photovoltaics might be planar photoluminescent concentrators. Even for diffuse solar radiation, considerable concentration factors might be achieved. Such devices have originally been designed on the basis of organic dyes and might benefit from a considerably improved lifetime when replacing the organic fluorescent substances by inorganic semiconductor nanocrystals, so-called quantum dots. Quantum dot containing nanocomposite thin films are synthesized at EPFL-LESO by a low cost sol-gel process. In order to study the potential of the use of quantum dot solar concentrators in photovoltaic solar energy conversion, reliable computer simulations are needed. A tool for ray tracing simulations of quantum dot solar concentrators has been developed at EPFL-LESO on the basis of Monte-Carlo methods that are applied to polarization-dependent reflection/transmission at interfaces, photon absorption by the semiconductor nanocrystals and photoluminescent re-emission. Together with the knowledge on the optoelectronical properties of suitable photovoltaic cells, such simulations allow to predict the total efficiency of the envisaged concentrating PV systems, and to optimize pane dimensions, photoluminescent emission frequencies, and choice of PV cell types. (author)

Highly Controlled Synthesis and Super-Radiant Photoluminescence of Plasmonic Cube-in-Cube Nanoparticles.

Science.gov (United States)

Park, Jeong-Eun; Kim, Sungi; Son, Jiwoong; Lee, Yeonhee; Nam, Jwa-Min

2016-12-14

The plasmonic properties of metal nanostructures have been heavily utilized for surface-enhanced Raman scattering (SERS) and metal-enhanced fluorescence (MEF), but the direct photoluminescence (PL) from plasmonic metal nanostructures, especially with plasmonic coupling, has not been widely used as much as SERS and MEF due to the lack of understanding of the PL mechanism, relatively weak signals, and the poor availability of the synthetic methods for the nanostructures with strong PL signals. The direct PL from metal nanostructures is beneficial if these issues can be addressed because it does not exhibit photoblinking or photobleaching, does not require dye-labeling, and can be employed as a highly reliable optical signal that directly depends on nanostructure morphology. Herein, we designed and synthesized plasmonic cube-in-cube (CiC) nanoparticles (NPs) with a controllable interior nanogap in a high yield from Au nanocubes (AuNCs). In synthesizing the CiC NPs, we developed a galvanic void formation (GVF) process, composed of replacement/reduction and void formation steps. We unraveled the super-radiant character of the plasmonic coupling-induced plasmon mode which can result in highly enhanced PL intensity and long-lasting PL, and the PL mechanisms of these structures were analyzed and matched with the plasmon hybridization model. Importantly, the PL intensity and quantum yield (QY) of CiC NPs are 31 times and 16 times higher than those of AuNCs, respectively, which have shown the highest PL intensity and QY reported for metallic nanostructures. Finally, we confirmed the long-term photostability of the PL signal, and the signal remained stable for at least 1 h under continuous illumination.

Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix

Science.gov (United States)

Kung, Patrick; Harris, Nicholas; Shen, Gang; Wilbert, David S.; Baughman, William; Balci, Soner; Dawahre, Nabil; Butler, Lee; Rivera, Elmer; Nikles, David; Kim, Seongsin M.

2012-01-01

Quantum dot (QD) functionalized nanowire arrays are attractive structures for low cost high efficiency solar cells. QDs have the potential for higher quantum efficiency, increased stability and lifetime compared to traditional dyes, as well as the potential for multiple electron generation per photon. Nanowire array scaffolds constitute efficient, low resistance electron transport pathways which minimize the hopping mechanism in the charge transport process of quantum dot solar cells. However, the use of liquid electrolytes as a hole transport medium within such scaffold device structures have led to significant degradation of the QDs. In this work, we first present the synthesis uniform single crystalline ZnO nanowire arrays and their functionalization with InP/ZnS core-shell quantum dots. The structures are characterized using electron microscopy, optical absorption, photoluminescence and Raman spectroscopy. Complementing photoluminescence, transmission electron microanalysis is used to reveal the successful QD attachment process and the atomistic interface between the ZnO and the QD. Energy dispersive spectroscopy reveals the co-localized presence of indium, phosphorus, and sulphur, suggestive of the core-shell nature of the QDs. The functionalized nanowire arrays are subsequently embedded in a poly-3(hexylthiophene) hole transport matrix with a high degree of polymer infiltration to complete the device structure prior to measurement.

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

Science.gov (United States)

Can, Nuri; Okur, Serdal; Monavarian, Morteza; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Teke, Ali; Özgür, Ümit

2015-03-01

Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect on the internal quantum efficiencies. It was confirmed for all LEDs that the photoluminescence (PL) transients are governed by radiative recombination at low temperatures while nonradiative recombination dominates at room temperature. At photoexcited carrier densities of 3 - 4.5 x 1016 cm-3 , the room-temperature Shockley-Read-Hall (A) and the bimolecular (B) recombination coefficients (A, B) were deduced to be (9.2x107 s-1, 8.8x10-10 cm3s-1), (8.5x107 s-1, 6.6x10-10 cm3s-1), and (6.5x107 s-1, 1.4x10-10 cm3s-1) for the six period 1.5, 2, and 3 nm well-width LEDs, respectively. From the temperature dependence of the radiative lifetimes, τrad α Tn/2, the dimensionality n of the active region was found to decrease consistently with decreasing well width. The 3 nm wide wells exhibited ~T1.5 dependence, suggesting a three-dimensional nature, whereas the 1.5 nm wells were confirmed to be two-dimensional (~T1) and the 2 nm wells close to being two-dimensional. We demonstrate that a combination of temperature dependent PL and time-resolved PL techniques can be used to evaluate the dimensionality as well as the quantum efficiencies of the LED active regions for a better understanding of the relationship between active-region design and the efficiency limiting processes in InGaN LEDs.

Reduced reabsorption and enhanced propagation induced by large Stokes shift in quantum dot-filled optical fiber

Energy Technology Data Exchange (ETDEWEB)

Wu, Hua; Zhang, Yu, E-mail: yuzhang@jlu.edu.cn; Lu, Min; Liu, Wenyan [Jilin University, State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering (China); Xu, Jian [The Pennsylvania State University, Department of Engineering Science and Mechanics (United States); Yu, William W., E-mail: wyu6000@gmail.com [Jilin University, State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering (China)

2016-07-15

With tunable emission wavelength, high photoluminescence quantum yield, and broad absorption, colloidal quantum dots are attractive for the application in optical fiber as dopants. However, most of the quantum dots have a large overlap between their absorption and photoluminescence spectra, resulting in reabsorption loss which hinders the realization of long-distance waveguides. Therefore, ZnCuInS/ZnSe/ZnS quantum dots with large Stokes shift were proposed to fabricate a liquid-core optical fiber in this work. In this work, ZnCuInS/ZnSe/ZnS QDs with an average size of 3.3 nm were synthesized and the optical properties of the QD-filled fiber were also investigated as a function of fiber length and doping concentration. Compared to the control sample filled with CdSe/CdS/ZnS quantum dots, the ZnCuInS/ZnSe/ZnS quantum dot-based waveguides showed reduced reabsorption and enhanced signal propagation, which demonstrates great potential of large Stokes-shift quantum dots in optical waveguide devices.Graphical AbstractA reduced reabsorption and enhanced propagation of ZnCuInS/ZnSe/ZnS QDs-doped liquid-core optical fiber was achieved due to the large Stokes shift.

Temperature-dependent photoluminescence and contactless electroreflectance characterization of a ZnxCd1-xSe/Znx'Cdy'Mg1-x'-y'Se asymmetric coupled quantum well structure

International Nuclear Information System (INIS)

Wu, J.D.; Huang, Y.S.; Lin, D.Y.; Charles, W.O.; Shen, A.; Tamargo, M.C.; Tiong, K.K.

2011-01-01

Research highlights: → We report a detailed study of a ZnxCd 1-x Se/Znx'Cdy'Mg 1-x '-y'Se asymmetric coupled quantum well structure by using temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) techniques. → The PL peak position yielded information of the fundamental excitonic recombinations. → Analysis of the CER spectra led to the identification of various interband transitions. →Study of the temperature dependence of the excitonic transition energies indicated that main influence of temperature on the quantized transitions is through temperature dependence of the constituent material band gap in the well. - Abstract: Temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) were used to characterize a Zn x Cd 1-x Se/Zn x' Cd y' Mg 1-x'-y' Se asymmetric coupled quantum well (ACQW) structure in the range of 10-300 K. The PL peak position yielded information of the fundamental excitonic recombinations. A detailed analysis of the CER spectra led to the identification of various interband transitions. The intersubband transitions were then estimated and found to be in a good agreement with the previous report of Fourier-transform infrared absorption measurements. At low temperature, the PL spectra of the sample showed an asymmetric behavior with an exponential tail at the lower-energy side and were attributed to the localized excitonic recombinations due to potential fluctuations. Detailed study of the temperature dependence of the excitonic transition energies indicated that the main influence of temperature on the quantized transitions is through the temperature dependence of the band gap of the constituent material in the well.

High-fidelity quantum driving

DEFF Research Database (Denmark)

Bason, Mark George; Viteau, Matthieu; Malossi, Nicola

2011-01-01

Accurately controlling a quantum system is a fundamental requirement in quantum information processing and the coherent manipulation of molecular systems. The ultimate goal in quantum control is to prepare a desired state with the highest fidelity allowed by the available resources...... and the experimental constraints. Here we experimentally implement two optimal high-fidelity control protocols using a two-level quantum system comprising Bose–Einstein condensates in optical lattices. The first is a short-cut protocol that reaches the maximum quantum-transformation speed compatible...

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Fine structure and optical pumping of spins in individual semiconductor quantum dots

Science.gov (United States)

Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

2008-11-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

Fine structure and optical pumping of spins in individual semiconductor quantum dots

International Nuclear Information System (INIS)

Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L

2008-01-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

International Nuclear Information System (INIS)

Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

2012-01-01

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

Optical pumping of electron and nuclear spin in a negatively-charged quantum dot

Science.gov (United States)

Bracker, Allan; Gershoni, David; Korenev, Vladimir

2005-03-01

We report optical pumping of electron and nuclear spins in an individual negatively-charged quantum dot. With a bias-controlled heterostructure, we inject one electron into the quantum dot. Intense laser excitation produces negative photoluminescence polarization, which is easily erased by the Hanle effect, demonstrating optical pumping of a long-lived resident electron. The electron spin lifetime is consistent with the influence of nuclear spin fluctuations. Measuring the Overhauser effect in high magnetic fields, we observe a high degree of nuclear spin polarization, which is closely correlated to electron spin pumping.

Ultrafast spontaneous emission modulation of graphene quantum dots interacting with Ag nanoparticles in solution

Energy Technology Data Exchange (ETDEWEB)

Zhao, Jianwei [Department of Physics, Shanghai University, Shanghai 200444 (China); Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); Lu, Jian, E-mail: luj@sari.ac.cn; Wang, Zhongyang, E-mail: wangzy@sari.ac.cn [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); Wang, Liang [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China); Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 200444 (China); Tian, Linfan [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210 (China); Deng, Xingxia [Research Center of Quantum Macro-Phenomenon and Application, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210 (China); School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Tian, Lijun [Department of Physics, Shanghai University, Shanghai 200444 (China); Pan, Dengyu [School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China)

2016-07-11

We investigated the strong interaction between graphene quantum dots and silver nanoparticles in solution using time-resolved photoluminescence techniques. In solution, the silver nanoparticles are surrounded by graphene quantum dots and interacted with graphene quantum dots through exciton-plasmon coupling. An ultrafast spontaneous emission process (lifetime 27 ps) was observed in such a mixed solution. This ultrafast lifetime corresponds to the emission rate exceeding 35 GHz, with the purcell enhancement by a factor of ∼12. These experiment results pave the way for the realization of future high speed light sources applications.

Optical Pumping of the Electronic and Nuclear Spin of Single Charge-Tunable Quantum Dots

Science.gov (United States)

Bracker, A. S.; Stinaff, E. A.; Gammon, D.; Ware, M. E.; Tischler, J. G.; Shabaev, A.; Efros, Al. L.; Park, D.; Gershoni, D.; Korenev, V. L.; Merkulov, I. A.

2005-02-01

We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.

The mechanism of the photoluminescence changes in bio-conjugated CdSe/ZnS quantum dots

Science.gov (United States)

Borkovska, L.; Korsunska, N.; Stara, T.; Kolomys, O.; Strelchuk, V.; Rachkov, O.; Kryshtab, T.

2013-09-01

The change of the photoluminescence (PL) and optical characteristics in non-conjugated and conjugated with S6K2 antibody CdSe/ZnS core/shell quantum dots (QDs) during storage in air has been studied by the conventional PL, micro-PL and micro-Raman techniques. The QDs dried on a crystalline Si substrate were kept in the darkness and under illumination. In the PL spectra, the storage resulted in a blue shift of PL peak position, in the increasing of the full width at a half maximum (FWHM) of the PL band and in the decreasing of the PL intensity. In the Raman spectra, the shift of the CdSe LO peak position to the low frequency region and the increasing of its FWHM were observed. The transformations in the PL and optical characteristics correlate with each other and are found to be the largest in bio-conjugated QDs stored under illumination. The increase of the light intensity accelerated the changes occurred during storage. An oxidation of the QD core, which decreases the QD size, is supposed to be responsible for observed transformations. The bio-conjugation is assumed to promote QD oxidation that results in different PL peak position in stored non-conjugated and bio-conjugated QDs. The mechanism of the effect is discussed.

Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.

Science.gov (United States)

de Weerd, Chris; Shin, Yonghun; Marino, Emanuele; Kim, Joosung; Lee, Hyoyoung; Saeed, Saba; Gregorkiewicz, Tom

2017-10-31

Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other applications. Ideal materials for these applications should feature efficient radiative recombination and absorption transitions, altogether with spectral tunability over a wide range. Group IV semiconductor quantum dots can fulfill these requirements and serve as an alternative to the commonly used direct bandgap materials containing toxic and/or rare elements. Here, we present optical properties of butyl-terminated Si and Ge quantum dots and compare them to those of graphene quantum dots, finding them remarkably similar. We investigate their time-resolved photoluminescence emission as well as the photoluminescence excitation and linear absorption spectra. We contemplate that their emission characteristics indicate a (semi-) resonant activation of the emitting channel; the photoluminescence excitation shows characteristics similar to those of a molecule. The optical density is consistent with band-to-band absorption processes originating from core-related states. Hence, these observations strongly indicate a different microscopic origin for absorption and radiative recombination in the three investigated quantum dot systems.

Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

International Nuclear Information System (INIS)

Ha, Neul; Kuroda, Takashi; Liu, Xiangming; Mano, Takaaki; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki; Castellano, Andrea; Sanguinetti, Stefano

2014-01-01

We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C 3v symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks

Investigation of the non-square InGaAsP/InP quantum wells in the electric field by photoreflectance

International Nuclear Information System (INIS)

Kudrawiec, R.; Sek, G.; Rudno-Rudzinski, W.; Misiewicz, J.; Wojcik, J.; Robinson, B.J.; Thompson, D.A.; Mascher, P.

2002-01-01

Non-square quantum wells in electric field have been investigated by photoreflectance and photoluminescence spectroscopies. The structures have been obtained by a post-growth modification (rapid thermal annealing) of standard 1.55 μm InGaAsP-based laser structures that have grown by gas molecular beam epitaxy. During rapid thermal annealing a migration of semiconductor atoms across quantum well interfaces changes the quantum well profile from a square well to rounded well. The modification of the profile changes energy levels in the quantum wells and in consequence a blue shift of the quantum well emission peak is observed in photoluminescence. In this paper the blue shift of the ground state transition of post-growth modified quantum well structures has been investigated by both photoluminescence and photoreflectance techniques. Also a blue shift of excited state transitions has been observed in photoreflectance spectra. Generally, a stronger blue shift for the ground state transition than for excited state transitions has been observed. Additionally, oscillator strengths for all quantum well transitions have been determined from photoreflectance spectra. It has been found that the oscillator strength is constant for all quantum well transitions despite of modification of the quantum well profile. (author)

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Sahraoui

2015-04-09

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Saharoui; Mughal, Asad Jahangir

2015-01-01

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Influence of hydrogen peroxide on the stability and optical properties of CdS quantum dots in gelatin

Energy Technology Data Exchange (ETDEWEB)

Klyuev, V.G.; Volykhin, D.V., E-mail: volykhin.d@ya.ru; Ivanova, A.A.

2017-03-15

Influence of hydrogen peroxide on the stability and optical characteristics of CdS quantum dots obtained by aqueous synthesis in gelatin is investigated. It is shown that the action of hydrogen peroxide on the CdS quantum dots reduces the average particle size, increases monodispersity of particle size distribution, and also increases the photoluminescence intensity. A model that explains the behavior of CdS quantum dots photoluminescence with a decrease of particle size as a result of treatment with hydrogen peroxide is presented.

Photoluminescence characteristics of InAs quantum dots grown by STM/MBE site-control technique

Energy Technology Data Exchange (ETDEWEB)

Nishikawa, S.; Kohmoto, S.; Nakamura, H.; Ishikawa, T.; Asakawa, K.; Wada, O. [Femtosecond Technology Research Association, Tsukuba, Ibaraki (Japan). FESTA Lab.

2001-03-08

This paper describes micro-photoluminescence (PL) analysis of site-controlled QDs (SCQDs) grown using a novel in-situ MBE growth technique in which sites of self-assembled InAs QDs are controlled by forming nanometer deposits using a scanning tunneling microscope (STM) probe. We found from the temperature dependence of PL that the carrier collection at QDs at low temperature is limited by carrier diffusion in the wetting layer. The analysis of PL data considering this effect has indicated that individual QDs grown have high crystalline quality in spite of the addition of an artificial STM process during growth. (orig.)

Photoluminescence from CdxHg1-xTe

International Nuclear Information System (INIS)

Breivik, M; Selvig, E; Tonheim, C R; Brendhagen, E; Brudevoll, T; Rheenen, A D van; Steen, H; Nicolas, S; Lorentzen, T; Haakenaasen, R

2008-01-01

We present important aspects of photoluminescence (PL) of Cd x Hg 1-x Te in the infrared part of the spectrum where background thermal radiation significantly affects the PL spectrum. We show how the background spectrum can be removed from the data. We also show how the wavelength of the excitation laser affects the relative intensity of the PL peaks from a multi-layer structure. Finally, we present temperature dependent PL of a Cd 0.36 Hg 0.64 Te/Cd 0.61 Hg 0.39 Te multiple quantum well structure grown on a 4 μm thick Cd 0.36 Hg 0.64 Te buffer layer. We attribute the low temperature peak from the buffer layer to impurities. The impurity levels are depopulated as the temperature increases, resulting in a decreased PL peak intensity. Above ∼200 K a band-to-band peak from the buffer layer is observed. The quantum well peak persists up to ∼200 K

Nearly suppressed photoluminescence blinking of small-sized, blue-green-orange-red emitting single CdSe-based core/gradient alloy shell/shell quantum dots: correlation between truncation time and photoluminescence quantum yield.

Science.gov (United States)

Roy, Debjit; Mandal, Saptarshi; De, Chayan K; Kumar, Kaushalendra; Mandal, Prasun K

2018-04-18

CdSe-based core/gradient alloy shell/shell semiconductor quantum dots (CGASS QDs) have been shown to be optically quite superior compared to core-shell QDs. However, very little is known about CGASS QDs at the single particle level. Photoluminescence blinking dynamics of four differently emitting (blue (λem = 510), green (λem = 532), orange (λem = 591), and red (λem = 619)) single CGASS QDs having average sizes 600 nm). In this manuscript, we report nearly suppressed PL blinking behaviour of CGASS QDs with average sizes correlation between the event durations and found that residual memory exists in both the ON- and OFF-event durations. Positively correlated successive ON-ON and OFF-OFF event durations and negatively correlated (anti-correlated) ON-OFF event durations perhaps suggest the involvement of more than one type of trapping process within the blinking framework. The timescale corresponding to the additional exponential term has been assigned to hole trapping for ON-event duration statistics. Similarly, for OFF-event duration statistics, this component suggests hole detrapping. We found that the average duration of the exponential process for the ON-event durations is an order of magnitude higher than that of the OFF-event durations. This indicates that the holes are trapped for a significantly long time. When electron trapping is followed by such a hole trapping, long ON-event durations result. We have observed long ON-event durations, as high as 50 s. The competing charge tunnelling model has been used to account for the observed blinking behaviour in these CGASS QDs. Quite interestingly, the PLQY of all of these differently emitting QDs (an ensemble level property) could be correlated with the truncation time (a property at the single particle level). A respective concomitant increase-decrease of ON-OFF event truncation times with increasing PLQY is also indicative of a varying degree of suppression of the Auger recombination processes in these four

Hydrothermal synthesis of highly luminescent blue-emitting ZnSe(S) quantum dots exhibiting low toxicity

Energy Technology Data Exchange (ETDEWEB)

Mirnajafizadeh, Fatemeh; Ramsey, Deborah; McAlpine, Shelli [School of Chemistry, University of New South Wales, Sydney, NSW 2052 (Australia); Wang, Fan; Reece, Peter [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Stride, John Arron, E-mail: j.stride@unsw.edu.au [School of Chemistry, University of New South Wales, Sydney, NSW 2052 (Australia); Bragg Institute, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia)

2016-07-01

Highly luminescent quantum dots (QDs) that emit in the visible spectrum are of interest to a number of imaging technologies, not least that of biological samples. One issue that hinders the application of luminescent markers in biology is the potential toxicity of the fluorophore. Here we show that hydrothermally synthesized ZnSe(S) QDs have low cytotoxicity to both human colorectal carcinoma cells (HCT-116) and human skin fibroblast cells (WS1). The QDs exhibited a high degree of crystallinity, with a strong blue photoluminescence at up to 29% quantum yield relative to 4′,6-diamidino-2-phenylindole (DAPI) without post-synthetic UV-irradiation. Confocal microscopy images obtained of HCT-116 cells after incubation with the QDs highlighted the stability of the particles in cell media. Cytotoxicity studies showed that both HCT-116 and WS1 cells retain 100% viability after treatment with the QDs at concentrations up to 0.5 g/L, which makes them of potential use in biological imaging applications. - Highlights: • Highly luminescent ZnSe(S) QDs were synthesized using a simple, one-step hydrothermal method. • The as-synthesized QDs were found to be nontoxic in the presence of biological cells. • The QDs were stable in biological media with identical emission profile to that in water.

The synthesis of CdSe quantum dots with carboxyl group and study on their optical characteristics

International Nuclear Information System (INIS)

Ye, Chen; Park, Sangjoon; Kim, Jongsung

2009-01-01

Quantum dots are nanocrystal semiconductors which attract lots of research interests due to their peculiar optical properties. CdSe/ZnS quantum dots have been synthesized via pyrolysis of organometallic reagents. The color of the quantum dot changes from yellow-green to red as their size increases with reaction time. Photoluminescence quantum efficiency of CdSe quantum dots have been enhanced by passivating the surface of CdSe quantum dots with ZnS layers. Quantum dots are nanocrystal semiconductors which attract lots of research interests due to their peculiar optical properties. CdSe/ZnS quantum dots have been synthesized via pyrolysis of organometallic reagents. The color of the quantum dot changes from yellow-green to red as their size increases with reaction time. Photoluminescence quantum efficiency of CdSe quantum dots have been enhanced by passivating the surface of CdSe quantum dots with ZnS layers. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Excitons and trions in modulation doped structures in high magnetic fields

International Nuclear Information System (INIS)

Kochereshko, V.; Andronikov, D.; Platonov, A.; Crooker, S.; Barrick, T.; Karczewski, G.; Tronc, P.

2004-01-01

Photoluminescence spectra of modulation-doped CdTe/CdMgTe quantum well structures containing two-dimensional electron gases of low, moderate and high electron concentrations were studied in high magnetic fields up to 45 T. The recombination line of triplet trion state was found in the spectra. A model calculation of photoluminescence spectra in magnetic fields, which takes into account singlet and triplet trion states, was carried out. It was shown that the dark triplet becomes observable in photoluminescence spectra because it becomes the only recombination channel when the formation of the singlet trion state is suppressed by magnetic fields. (author)

A two-step obtainment of quantum confinement in ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Mofor, A C; El-Shaer, A; Suleiman, M; Bakin, A; Waag, A [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)

2006-10-14

ZnO nanorod-based single quantum well heterostructures were fabricated in a two-step process. Nanorods were first grown using vapour transport. Subsequently, high-quality ZnO/Zn{sub 0.85}Mg{sub 0.15}O heterostructures were grown on the nanorods using molecular beam epitaxy. The nanorods are well aligned along the c-axis of ZnO, as indicated by a very narrow rocking curve full width at half maximum. Quantum confinement was clearly observed within the ZnO well for different well widths. The quantum wells show photoluminescence peaks with a full width at half maximum as small as 15 meV.

Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures

International Nuclear Information System (INIS)

Espinola, J L Casas; Dybic, M; Ostapenko, S; Torchynska, T V; Polupan, G

2007-01-01

Ground and multi excited state photoluminescence, as well as its temperature dependence, in InAs quantum dots embedded in symmetric In x Ga 1-x As/GaAs (x = 0.15) quantum wells (DWELL) have been investigated. The solution of the set of rate equations for exciton dynamics (relaxation into QWs or QDs and thermal escape) solved by us earlier is used for analysis the variety of thermal activation energies of photoluminescence thermal quenching for ground and multi excited states of InAs QDs. The obtained solutions were used at the discussion of the variety of activation energies of PL thermal quenching in InAs QDs. It is revealed three different regimes of thermally activated quenching of the QD PL intensity. These three regimes were attributed to thermal escape of excitons: i) from the high energy excited states of InAs QDs into the WL with follows exciton re-localization; ii) from the In x Ga 1-x As QWs into the GaAs barrier and iii) from the WL into the GaAs barrier with their subsequent nonradiative recombination in GaAs barrier

Phosphorene quantum dots

Science.gov (United States)

Vishnoi, Pratap; Mazumder, Madhulika; Barua, Manaswee; Pati, Swapan K.; Rao, C. N. R.

2018-05-01

Phosphorene, a two-dimensional material, has been a subject of recent investigations. In the present study, we have prepared blue fluorescent phosphorene quantum dots (PQDs) by liquid phase exfoliation of black phosphorus in two non-polar solvents, toluene and mesitylene. The average particle sizes of PQDs decrease from 5.0 to 1.0 nm on increasing the sonicator power from 150 to 225 W. The photoluminescence spectrum of the PQDs is red-shifted in the 395-470 nm range on increasing the excitation-wavelength from 300 to 480 nm. Electron donor and acceptor molecules quench the photoluminescence, with the acceptors showing more marked effects.

Investigation of In0.7Ga0.3As/In0.7Al0.3As metamorphic HEMT- heterostructures by photoluminescence spectroscopy

International Nuclear Information System (INIS)

LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Romanovskiy, D S; LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Tarasov, S A; Galiev, G B; Pushkarev, S S

2014-01-01

Low-temperature photoluminescence and photoreflectance have been studied in several metamorphic HEMT- (MHEMT-) heterostructures with the same active regions and different buffer layer designs grown by solid-source molecular beam epitaxy. The indium mole fraction in InAlAs/InGaAs/InAlAs single quantum well (QW) is 0.7. It was found that structures with step-graded metamorphic buffer have better quality. Also it was shown that mismatched superlattices in metamorphic buffer can influence on the half-width of photoluminescence spectra. The possible attribution of photoluminescence and photoreflectance spectral lines and their thermal behaviour are critically discussed

Characterization of interfaces in semimagnetic quantum wells

International Nuclear Information System (INIS)

Schmitt, G.; Kuhn-Heinrich, B.; Zehnder, U.; Ossau, W.; Litz, T.; Waag, A.; Landwehr, G.

1995-01-01

The interfaces between nonmagnetic CdTe quantum wells and semimagnetic barriers of Cd 1-x Mn x Te were investigated for several well widths by low temperature photoluminescence and photoluminescence excitation spectroscopy. Specially designed Cd 1-x Mn x /CdTe/Cd 1-y Mg y Te structures enable us to distinguish the quality of semimagnetic normal and inverted interfaces. The normal interface shows to better structural quality than the inverted interface. (author)

Photoluminescence of spray pyrolysis deposited ZnO nanorods

Directory of Open Access Journals (Sweden)

Mikli Valdek

2011-01-01

Full Text Available Abstract Photoluminescence of highly structured ZnO layers comprising well-shaped hexagonal rods is presented. The ZnO rods (length 500-1,000 nm, diameter 100-300 nm were grown in air onto a preheated soda-lime glass (SGL or ITO/SGL substrate by low-cost chemical spray pyrolysis method using zinc chloride precursor solutions and growth temperatures in the range of 450-550°C. We report the effect of the variation in deposition parameters (substrate type, growth temperature, spray rate, solvent type on the photoluminescence properties of the spray-deposited ZnO nanorods. A dominant near band edge (NBE emission is observed at 300 K and at 10 K. High-resolution photoluminescence measurements at 10 K reveal fine structure of the NBE band with the dominant peaks related to the bound exciton transitions. It is found that all studied technological parameters affect the excitonic photoluminescence in ZnO nanorods. PACS: 78.55.Et, 81.15.Rs, 61.46.Km

Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells

Science.gov (United States)

2013-01-01

Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the solar cells with and without thermal treatment are characterized by photoluminescence technique. Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy. PMID:23281811

High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

KAUST Repository

Zhang, Meng

2011-05-01

InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

Photoluminescent carbogenic nanoparticles directly derived from crude biomass

KAUST Repository

Krysmann, Marta J.

2012-01-01

We present an environmentally benign, energy efficient and readily scalable approach to synthesize photoluminescent carbogenic nanoparticles directly from soft tissue biomass. Our approach relies on the pyrolytic decomposition of grass that gives rise to the formation of well-defined nanoparticles. The carbogenic nanoparticles can be readily surface modified, generating a series of highly selective photoluminescent materials that exhibit remarkable stability upon prolonged exposure to aggressive, high-temperature, high-salinity environment. © 2012 The Royal Society of Chemistry.

Quantum secure direct communication with high-dimension quantum superdense coding

International Nuclear Information System (INIS)

Wang Chuan; Li Yansong; Liu Xiaoshu; Deng Fuguo; Long Guilu

2005-01-01

A protocol for quantum secure direct communication with quantum superdense coding is proposed. It combines the ideas of block transmission, the ping-pong quantum secure direct communication protocol, and quantum superdense coding. It has the advantage of being secure and of high source capacity

Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

Energy Technology Data Exchange (ETDEWEB)

Shimosako, N., E-mail: n-shimosako@sophia.jp; Inose, Y.; Satoh, H.; Kinjo, K.; Nakaoka, T.; Oto, T. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Kishino, K.; Ema, K. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Sophia Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

2015-11-07

We have measured and analyzed the carrier-density dependence of photoluminescence (PL) spectra and the PL efficiency of InGaN/GaN multiple quantum wells in nanocolumns and in a thin film over a wide excitation range. The localized states parameters, such as the tailing parameter, density and size of the localized states, and the mobility edge density are estimated. The spectral change and reduction of PL efficiency are explained by filling of the localized states and population into the extended states around the mobility edge density. We have also found that the nanocolumns have a narrower distribution of the localized states and a higher PL efficiency than those of the film sample although the In composition of the nanocolumns is higher than that of the film.

Integrated smartphone imaging of quantum dot photoluminescence and Förster resonance energy transfer

Science.gov (United States)

Petryayeva, Eleonora; Algar, W. Russ

2015-06-01

Smartphones and other mobile devices are emerging as promising analytical platforms for point-of-care diagnostics, particularly when combined with nanotechnology. For example, we have shown that the optical properties of semiconductor quantum dots (QDs) are well suited to photoluminescence (PL) detection with a smartphone camera. However, this previous work has utilized an external excitation source for interrogation of QD PL. In this proceeding, we demonstrate that the white-light LED photographic flashes built into smartphones can be optically filtered to yield blue light suitable for excitation of QD PL. Measurements were made by recording video with filtered flash illumination and averaging the frames of the video to obtain images with good signal-to-background ratios. These images permitted detection of green-emitting and red-emitting QDs at levels comparable to those possible with excitation using an external long-wave UV lamp. The optical properties of QDs proved to be uniquely suited to smartphone PL imaging, exhibiting emission that was 1-2 orders magnitude brighter than that of common fluorescent dyes under the same conditions. Excitation with the smartphone flash was also suitable for imaging of FRET between green-emitting QD donors and Alexa Fluor 555 (A555) fluorescent dye acceptors. No significant difference in FRET imaging capability was observed between excitation with the smartphone flash and a long-wave UV lamp. Although the smartphone flash did have some disadvantages compared to an external UV lamp, these disadvantages are potentially offset by the benefit of having excitation and detection integrated into the smartphone.

Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

2014-05-15

Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

International Nuclear Information System (INIS)

Shimomura, K.; Kamiya, I.

2015-01-01

Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers

Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

Energy Technology Data Exchange (ETDEWEB)

Shimomura, K., E-mail: sd12502@toyota-ti.ac.jp; Kamiya, I., E-mail: kamiya@toyota-ti.ac.jp [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

2015-02-23

Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers.

Core–shell quantum dots: Properties and applications

Energy Technology Data Exchange (ETDEWEB)

Vasudevan, D., E-mail: vasudevand@rediffmail.com [Electrodics and electrocatalysis division, CSIR-CECRI, Karaikudi 630006 (India); Gaddam, Rohit Ranganathan [Amity Institute of Nanotechnology, Amity University, Noida 201301 (India); Trinchi, Adrian; Cole, Ivan [CSIRO Materials Science and Engineering, Clayton South MDC, 3169 (Australia)

2015-07-05

Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis.

Core–shell quantum dots: Properties and applications

International Nuclear Information System (INIS)

Vasudevan, D.; Gaddam, Rohit Ranganathan; Trinchi, Adrian; Cole, Ivan

2015-01-01

Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis

Versatile Tri(pyrazolyl)phosphanes as Phosphorus Precursors for the Synthesis of Highly Emitting InP/ZnS Quantum Dots.

Science.gov (United States)

Panzer, René; Guhrenz, Chris; Haubold, Danny; Hübner, René; Gaponik, Nikolai; Eychmüller, Alexander; Weigand, Jan J

2017-11-13

Tri(pyrazolyl)phosphanes (5 R1,R2 ) are utilized as an alternative, cheap and low-toxic phosphorus source for the convenient synthesis of InP/ZnS quantum dots (QDs). From these precursors, remarkably long-term stable stock solutions (>6 months) of P(OLA) 3 (OLAH=oleylamine) are generated from which the respective pyrazoles are conveniently recovered. P(OLA) 3 acts simultaneously as phosphorus source and reducing agent in the synthesis of highly emitting InP/ZnS core/shell QDs. These QDs are characterized by a spectral range between 530-620 nm and photoluminescence quantum yields (PL QYs) between 51-62 %. A proof-of-concept white light-emitting diode (LED) applying the InP/ZnS QDs as a color-conversion layer was built to demonstrate their applicability and processibility. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polarized emission from CsPbX3 perovskite quantum dots

Science.gov (United States)

Wang, Dan; Wu, Dan; Dong, Di; Chen, Wei; Hao, Junjie; Qin, Jing; Xu, Bing; Wang, Kai; Sun, Xiaowei

2016-06-01

Compared to organic/inorganic hybrid perovskites, full inorganic perovskite quantum dots (QDs) exhibit higher stability. In this study, full inorganic CsPbX3 (X = Br, I and mixed halide systems Br/I) perovskite QDs have been synthesized and interestingly, these QDs showed highly polarized photoluminescence which is systematically studied for the first time. Furthermore, the polarization of CsPbI3 was as high as 0.36 in hexane and 0.40 as a film. The CsPbX3 perovskite QDs with high polarization properties indicate that they possess great potential for application in new generation displays with wide colour gamut and low power consumption.Compared to organic/inorganic hybrid perovskites, full inorganic perovskite quantum dots (QDs) exhibit higher stability. In this study, full inorganic CsPbX3 (X = Br, I and mixed halide systems Br/I) perovskite QDs have been synthesized and interestingly, these QDs showed highly polarized photoluminescence which is systematically studied for the first time. Furthermore, the polarization of CsPbI3 was as high as 0.36 in hexane and 0.40 as a film. The CsPbX3 perovskite QDs with high polarization properties indicate that they possess great potential for application in new generation displays with wide colour gamut and low power consumption. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01915c

Coupling of erbium dopants to yttrium orthosilicate photonic crystal cavities for on-chip optical quantum memories

Energy Technology Data Exchange (ETDEWEB)

Miyazono, Evan; Zhong, Tian; Craiciu, Ioana; Kindem, Jonathan M.; Faraon, Andrei, E-mail: faraon@caltech.edu [T. J. Watson Laboratory of Applied Physics, California Institute of Technology, 1200 E California Blvd, Pasadena, California 91125 (United States)

2016-01-04

Erbium dopants in crystals exhibit highly coherent optical transitions well suited for solid-state optical quantum memories operating in the telecom band. Here, we demonstrate coupling of erbium dopant ions in yttrium orthosilicate to a photonic crystal cavity fabricated directly in the host crystal using focused ion beam milling. The coupling leads to reduction of the photoluminescence lifetime and enhancement of the optical depth in microns-long devices, which will enable on-chip quantum memories.

Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

International Nuclear Information System (INIS)

Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun

1999-01-01

We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

Directory of Open Access Journals (Sweden)

Heyn Ch

2009-01-01

Full Text Available Abstract Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.

Photoluminescent enhancement of CdSe/Cd(1-x) Zn(x)S quantum dots by hexadecylamine at room temperature.

Science.gov (United States)

Yang, Jie; Yang, Ping

2012-09-01

CdSe/Cd(1-x) Zn(x)S core/shell quantum dots (QDs) were fabricated in 1-octadecene via a two step synthesis. CdSe cores were first prepared using CdO, trioctylphosphine (TOP) selenium, and stearic acid. Subsquently, a Cd(1-x) Zn(x)S shell coating was carried out using zinc acetate dihydrate, cadmium acetate dihydrate, TOPS, and hexadecylamine (HDA) starting materials in the friendly organic system under relatively low temperature. The absorption and photoluminescence (PL) spectra have a significant red shift after the coverage of Cd(1-x)Zn(x)S shell on CdSe cores. The X-ray diffraction analysis of samples confirmed the formation of core/shell structure. The PL quantum yields (QYs) of CdSe/Cd(1-x)Zn(x)S QDs were improved gradually with time at room temperature. This is ascribed to the surface passivation of HDA to the QDs during store. This phenomenon was confirmed by the Fourier transform infrared spectrum of samples. Namely, HDA does not capped on the surface of as-prepared QDs, in which a low PL QYs was observed (less than 10%). Being storing for certain time, HDA attached to the surface of the QDs, in which the PL QYs increased (up to 31%) and the full width at half maximum of PL spectra decreased. Moreover, the fluorescence decay curve of the core/shell QDs is closer to a biexponential decay profile and has a longer average PL lifetime. The variation of average PL lifetime also indicated the influence of HDA during store.

Optical studies of 2DEGs in Zinc Selenide quantum wells in high magnetic fields

International Nuclear Information System (INIS)

Ossau, Wolfgang J.; Astakhov, G.V.; Yakovlev, D.R.; Crooker, Scott A.; Waag, A.

2002-01-01

Optical properties of a two-dimensional electron gas in ZnSe/(Zn,Be,Mg)Se quantum well structures have been examined by means of photoluminescence and reflectivity techniques in external magnetic fields up to 50 T. For these structures the Fermi energy of the two-dimensional electron gas is falling in the range between the trion binding energy and the exciton binding energy, which keeps the dominating role of Coulombic interaction between electrons and photoexcited holes. Characteristic peculiarities of optical spectra are discussed.

Optical studies of 2DEGs in ZnSe quantum wells in high magnetic fields.

Energy Technology Data Exchange (ETDEWEB)

Ossau, Wolfgang J.; Astakhov, G. V.; Yakovlev, D. R.; Crooker, S. A. (Scott A.); Waag, A.

2002-01-01

Optical properties of a two-dimensional electron gas in ZnSe/(Zn,Be,Mg)Se quantum well structures have been examined by means of photoluminescence and reflectivity techniques in external magnetic fields up to 50 T. For these structures the Fermi energy of the two-dimensional electron gas is falling in the range between the trion binding energy and the exciton binding energy, which keeps the dominating role of Coulombic interaction between electrons and photoexcited holes. Characteristic peculiarities of optical spectra are discussed.

Ce3+-Doping to Modulate Photoluminescence Kinetics for Efficient CsPbBr3 Nanocrystals Based Light-Emitting Diodes.

Science.gov (United States)

Yao, Ji-Song; Ge, Jing; Han, Bo-Ning; Wang, Kun-Hua; Yao, Hong-Bin; Yu, Hao-Lei; Li, Jian-Hai; Zhu, Bai-Sheng; Song, Ji-Zhong; Chen, Chen; Zhang, Qun; Zeng, Hai-Bo; Luo, Yi; Yu, Shu-Hong

2018-03-14

Inorganic perovskite CsPbBr 3 nanocrystals (NCs) are emerging, highly attractive light emitters with high color purity and good thermal stability for light-emitting diodes (LEDs). Their high photo/electroluminescence efficiencies are very important for fabricating efficient LEDs. Here, we propose a novel strategy to enhance the photo/electroluminescence efficiency of CsPbBr 3 NCs through doping of heterovalent Ce 3+ ions via a facile hot-injection method. The Ce 3+ cation was chosen as the dopant for CsPbBr 3 NCs by virtue of its similar ion radius and formation of higher energy level of conduction band with bromine in comparison with the Pb 2+ cation to maintain the integrity of perovskite structure without introducing additional trap states. It was found that by increasing the doping amount of Ce 3+ in CsPbBr 3 NCs to 2.88% (atomic percentage of Ce compared to Pb) the photoluminescence quantum yield (PLQY) of CsPbBr 3 NCs reached up to 89%, a factor of 2 increase in comparison with the native, undoped ones. The ultrafast transient absorption and time-resolved photoluminescence (PL) spectroscopy revealed that Ce 3+ -doping can significantly modulate the PL kinetics to enhance the PL efficiency of doped CsPbBr 3 NCs. As a result, the LED device fabricated by adopting Ce 3+ -doped CsPbBr 3 NCs as the emitting layers exhibited a pronounced improvement of electroluminescence with external quantum efficiency (EQE) from 1.6 to 4.4% via Ce 3+ -doping.

Enhancement of the photoluminescence in CdSe quantum dot–polyvinyl alcohol composite by light irradiation

Energy Technology Data Exchange (ETDEWEB)

Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Gudymenko, O.; Venger, Ye. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauky 41, 03028 Kyiv (Ukraine); Stroyuk, O.; Raevska, O. [L. Pysarzhevsky Institute of Physical Chemistry, NAS of Ukraine, pr. Nauky 31, 03028 Kyiv (Ukraine); Kryshtab, T., E-mail: kryshtab@gmail.com [Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9 U.P.A.L.M., 07738 Mexico D.F. (Mexico)

2013-09-15

The effect of photo-induced enhancement (more than a tenfold) of room temperature deep-trap photoluminescence (PL) in CdSe quantum dots (QDs) embedded in polyvinyl alcohol (PVA) film has been found and investigated by the PL and X-ray diffraction methods. The effect is observed under illumination of the QD/PVA composite with LED's light of 409 or 470 nm at elevated temperatures and is shown to be caused by an increase of the activation energy of thermal quenching of defect-related PL. It is shown that thermal annealing of the composite by itself stimulates polymer crystallization and produces a small increase in the intensity of both the band-edge and defect-related PL bands of CdSe QDs. It is found that the effect of illumination decreases when the annealing temperature increases from 90 °C to 120 °C because thermal annealing at 120 °C per se results in strong enhancement of room temperature deep-trap PL. The effect of photo-induced enhancement of defect-related PL is found to be irreversible and is assumed to be related to the change of QD surface defect passivation or surface defect rearrangement. This is ascribed to partial destruction of PVA matrix as a result of interaction of QD/PVA interface with photocarriers generated in the QDs due to LED's light absorption.

Reversible Concentration-Dependent Photoluminescence Quenching and Change of Emission Color in CsPbBr3 Nanowires and Nanoplatelets.

Science.gov (United States)

Di Stasio, Francesco; Imran, Muhammad; Akkerman, Quinten A; Prato, Mirko; Manna, Liberato; Krahne, Roman

2017-06-15

We discuss the photoluminescence (PL) of quantum-confined CsPbBr 3 colloidal nanocrystals of two different shapes (nanowires and nanoplatelets) at different concentrations in solution and in solid-state films. Upon increasing the nanocrystal concentration in solution, a constant drop in photoluminescence quantum yield is observed, accompanied by a significant PL red shift. This effect is reversible, and the original PL can be restored by diluting to the original concentration. We show that this effect can be in part attributed to self-absorption and partly to aggregation. In particular, for nanoplatelets, where the aggregation is mostly irreversible, while the self-absorption effect is reversible, the two contributions can be well separated. Finally, when dry solid-state films are prepared, the emission band is shifted into the green spectral region, close to the bulk CsPbBr 3 band gap, thus preventing blue emission from such films.

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

Directory of Open Access Journals (Sweden)

Loh Ter-Hoe

2007-01-01

Full Text Available AbstractSi/Si0.66Ge0.34coupled quantum well (CQW structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD system. The samples were characterized using high resolution x-ray diffraction (HRXRD, cross-sectional transmission electron microscopy (XTEM and photoluminescence (PL spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

Transformation of photoluminescence spectra at the bioconjugation of core-shell CdSe/ZnS quantum dots

Energy Technology Data Exchange (ETDEWEB)

Macotela, L.G.V.; Douda, J. [UPIITA - Instituto Politecnico Nacional, Mexico (Mexico); Torchynska, T.V. [ESFM- Instituto Politecnico Nacional, Mexico (Mexico); Sierra, R.P. [CINVESTAV del IPN, Mexico (Mexico); Shcherbyna, L. [V. Lashkarev Institute of Semiconductor Physics at NASU, Kiev (Ukraine)

2010-04-15

The photoluminescence (PL) of nonconjugated and bioconjugated core-shell CdSe/ZnS quantum dots (QDs) has been discussed in this paper. Commercial CdSe/ZnS QDs with the size of 3.6-4.0 nm covered by polymer with emission at 560-565 nm (2.19-2.22 eV) have been used. The QD bioconjugation is performed with the mouse anti PSA (Prostate-Specific Antigen) antibody (mab). PL spectra of nonconjugated QDs are characterized by a superposition of PL bands related to exciton emission in the CdSe core (2.19-2.22 eV) and to hot electron-hole emission via surface states (2.37, 2.73 and 3.06 eV) at the CdSe/ZnS or ZnS/polymer interfaces. The PL spectrum of bioconjugated QDs has changed dramatically, with essential decreasing of the hot electron-hole recombination flow via interface states. This effect is explained on the base of re-charging of QD interface states at the bioconjugation. It is shown that the CdSe/ZnS QDs with interface states are very promising for the study of bioconjugation effects to antibodies (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Hydrothermal synthesis, crystal structures and photoluminescence properties of mixed europium–yttrium organic frameworks

International Nuclear Information System (INIS)

Han Yinfeng; Fu Lianshe; Mafra, Luís; Shi, Fa-Nian

2012-01-01

Three mixed europium–yttrium organic frameworks: Eu 2−x Y x (Mel)(H 2 O) 6 (Mel=mellitic acid or benzene-1,2,3,4,5,6-hexacarboxylic acid, x=0.38 1, 0.74 2, and 0.86 3) have been synthesized and characterized. All the compounds contain a 3-D net with (4, 8)-flu topology. The study indicates that the photoluminescence properties are effectively affected by the different ratios of europium and yttrium ions, the quantum efficiency is increased and the Eu 3+ lifetime becomes longer in these MOFs than those of the Eu analog. - Graphical abstract: Three mixed europium and yttrium organic frameworks: Eu 2−x Y x (Mel)(H 2 O) 6 (Mel=mellitic acid) have been synthesized and characterized. All the compounds contain a 3-D net with (4, 8)-flu topology. The study indicates that the photoluminescence properties are effectively affected by the different ratios of europium and yttrium ions, the quantum efficiency is increased and the Eu 3+ lifetime becomes longer in these MOFs than those of the Eu analog. Highlights: ► Three (4, 8)-flu topological mixed Eu and Y MOFs were synthesized under mild conditions. ► Metal ratios were refined by the single crystal data consistent with the EDS analysis. ► Mixed Eu and Y MOFs show longer lifetime and higher quantum efficiency than the Eu analog. ► Adding inert lanthanide into luminescent MOFs enlarges the field of luminescent MOFs.

Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

KAUST Repository

Wu, Feng; Sun, Haiding; Ajia, Idris A.; Roqan, Iman S.; Zhang, Daliang; Dai, Jiangnan; Chen, Changqing; Feng, Zhe Chuan; Li, Xiaohang

2017-01-01

Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.

Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

KAUST Repository

Wu, Feng

2017-05-03

Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.

Stretched exponential profiles of photoluminescence decays related to localized states in InGaAsN/GaAs single-quantum wells

International Nuclear Information System (INIS)

Nakayama, M.; Iguchi, Y.; Nomura, K.; Hashimoto, J.; Yamada, T.; Takagishi, S.

2007-01-01

We have investigated photoluminescence (PL) dynamics related to localized states in In x Ga 1-x As 1-y N y /GaAs single-quantum wells (SQWs) with the constant In content of x=0.32 and various N contents of y=0,0.004,and0.008. In order to determine the intrinsic band-edge energy, we used photoreflectance (PR) spectroscopy that is sensitive to the optical transitions at critical points. From systematic measurements of the PL and PR spectra, it is demonstrated that the slight incorporation of nitrogen considerably disorders the band-edge states of the InGaAsN SQWs, resulting from formation of localized states, so-called band-tail states. We find that the PL-decay profile related to the localized states generally exhibits a stretched exponential behavior peculiar to a disordered system at low temperatures, which means that randomness of alloy potential fluctuations including nitrogen dominates the PL dynamics

Formation Mechanism of Carbogenic Nanoparticles with Dual Photoluminescence Emission

KAUST Repository

Krysmann, Marta J.

2012-01-18

We present a systematic investigation of the formation mechanism of carbogenic nanoparticles (CNPs), otherwise referred to as C-dots, by following the pyrolysis of citric acid (CA)-ethanolamine (EA) precursor at different temperatures. Pyrolysis at 180 °C leads to a CNP molecular precursor with a strongly intense photoluminescence (PL) spectrum and high quantum yield formed by dehydration of CA-EA. At higher temperatures (230 °C) a carbogenic core starts forming and the PL is due to the presence of both molecular fluorophores and the carbogenic core. CNPs that exhibit mostly or exclusively PL arising from carbogenic cores are obtained at even higher temperatures (300 and 400 °C, respectively). Since the molecular fluorophores predominate at low pyrolysis temperatures while the carbogenic core starts forming at higher temperatures, the PL behavior of CNPs strongly depends on the conditions used for their synthesis. © 2011 American Chemical Society.

Fast and Straightforward Synthesis of Luminescent Titanium(IV Dioxide Quantum Dots

Directory of Open Access Journals (Sweden)

Václav Štengl

2017-01-01

Full Text Available The nucleus of titania was prepared by reaction of solution titanium oxosulphate with hydrazine hydrate. These titania nuclei were used for titania quantum dots synthesis by a simple and fast method. The prepared titanium(IV dioxide quantum dots were characterized by measurement of X-ray powder diffraction (XRD, X-ray photoelectron spectroscopy (XPS, atomic force microscopy (AFM, high-resolution electron microscopy (HRTEM, and selected area electron diffraction (SAED. The optical properties were determined by photoluminescence (PL spectra. The prepared titanium(IV dioxide quantum dots have the narrow range of UV excitation (365–400 nm and also a close range of emission maxima (450–500 nm.

Carrier transfer and magneto-transport in single modulation-doped V-grooved quantum wire modified by ion implantation

International Nuclear Information System (INIS)

Huang, S.H.; Chen Zhanghai; Wang, F.Z.; Shen, S.C.; Tan, H.H.; Fu, L.; Fraser, M.; Jagadish, C.

2006-01-01

A single Al 0.5 Ga 0.5 As/GaAs V-grooved quantum wire modified by selective ion implantation and rapid thermal annealing was investigated by using spatially resolved micro-photoluminescence spectroscopy and magneto-resistance measurements. The results of spatially resolved photoluminescence indicate that the ion-implantation-induced quantum well intermixing significantly raises the electronic sub-band energies in the side quantum wells (SQWs) and vertical quantum wells, and a more efficient accumulation of electrons in the quantum wires is achieved. Processes of real space carrier transfer from the SQW to the quantum wire was experimentally observed, and showed the blocking effect of carrier transfer due to the existence of the necking quantum well region. Furthermore, magneto-transport investigation on the ion-implanted quantum wire samples shows the quasi-one-dimensional intrinsic motion of electrons, which is important for the design and the optimization of one-dimensional electronic devices

Exploring the Nature of Exciton Localization in Quasi One-Dimensional GaAs/AlGaAs Quantum Well Tube Nanowires

Science.gov (United States)

Jackson, Howard; Badada, Bekele; Shi, Teng; Smith, Leigh; Zheng, Changlin; Etheridge, Joanne; Jiang, Nian; Tan, Hoe; Jagadish, Channupati

We explore the nature of exciton localization in single GaAs/AlGaAs nanowire quantum well tube (QWT) devices using photocurrent (PC) spectroscopy combined with simultaneous photoluminescence (PL) and photoluminescence excitation (PLE) measurements. Excitons confined to GaAs quantum well tubes of 8 and 4 nm widths embedded into an AlGaAs barrier are seen to ionize at high bias. Spectroscopic signatures of the ground and excited states confined to the QWT seen in PL, PLE and PC data are consistent with simple numerical calculations. The demonstration of good electrical contact with the QWTs enables the study of Stark effect shifts in the sharp emission lines of excitons localized to quantum dot-like states within the QWT. Atomic resolution cross-sectional TEM measurements, an analysis of the temperature dependence of PL and time-resolved PL as well as the quantum confined Stark effect of these dots provide insights into the nature of the exciton localization in these nanostructures. We acknowledge the financial support of NSF DMR 1507844, DMR 151373 and ECCS 1509706 and the Australian Research Council.

Splitting of photoluminescent emission from nitrogen–vacancy centers in diamond induced by ion-damage-induced stress

International Nuclear Information System (INIS)

Olivero, P; Bosia, F; Fairchild, B A; Gibson, B C; Greentree, A D; Spizzirri, P; Prawer, S

2013-01-01

We report a systematic investigation on the spectral splitting of negatively charged, nitrogen–vacancy (NV − ) photoluminescent emission in single-crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a high-pressure–high-temperature diamond, clearly distinguishable spectral components in the NV − emission develop over a range of ∼4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV − centers for ensemble quantum information protocols. (paper)

A novel one-pot room-temperature synthesis route to produce very small photoluminescent silicon nanocrystals

Science.gov (United States)

Douglas-Gallardo, Oscar A.; Burgos-Paci, Maxi A.; Mendoza-Cruz, Rubén; Putnam, Karl G.; Josefina Arellano-Jiménez, M.; José-Yacamán, Miguel; Mariscal, Marcelo M.; Macagno, Vicente A.; Sánchez, Cristián G.; Pérez, Manuel A.

2018-03-01

A novel strategy to synthesize photoluminescent silicon nanocrystals (SiNCs) from a reaction between tetraethylorthosilicate (TEOS) and trimethyl-hexadecyl-ammonium borohydride (CTABH4) in organic solvent is presented. The formation reaction occurs spontaneously at room temperature in homogeneous phase. The produced silicon nanocrystals are characterized by using their photoluminescent properties and via HRTEM. In addition, theoretical calculations of the optical absorption spectrum of silicon quantum dots in vacuum with different sizes and surface moieties were performed in order to compare with the experimental findings. The new chemical reaction is simple and can be implemented to produce silicon nanocrystal with regular laboratory materials by performing easy and safe procedures. [Figure not available: see fulltext.

Multi-Excitonic Quantum Dot Molecules

Science.gov (United States)

Scheibner, M.; Stinaff, E. A.; Doty, M. F.; Ware, M. E.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2006-03-01

With the ability to create coupled pairs of quantum dots, the next step towards the realization of semiconductor based quantum information processing devices can be taken. However, so far little knowledge has been gained on these artificial molecules. Our photoluminescence experiments on single InAs/GaAs quantum dot molecules provide the systematics of coupled quantum dots by delineating the spectroscopic features of several key charge configurations in such quantum systems, including X, X^+,X^2+, XX, XX^+ (with X being the neutral exciton). We extract general rules which determine the formation of molecular states of coupled quantum dots. These include the fact that quantum dot molecules provide the possibility to realize various spin configurations and to switch the electron hole exchange interaction on and off by shifting charges inside the molecule. This knowledge will be valuable in developing implementations for quantum information processing.

Synthetic Control of Exciton Behavior in Colloidal Quantum Dots.

Science.gov (United States)

Pu, Chaodan; Qin, Haiyan; Gao, Yuan; Zhou, Jianhai; Wang, Peng; Peng, Xiaogang

2017-03-08

Colloidal quantum dots are promising optical and optoelectronic materials for various applications, whose performance is dominated by their excited-state properties. This article illustrates synthetic control of their excited states. Description of the excited states of quantum-dot emitters can be centered around exciton. We shall discuss that, different from conventional molecular emitters, ground-state structures of quantum dots are not necessarily correlated with their excited states. Synthetic control of exciton behavior heavily relies on convenient and affordable monitoring tools. For synthetic development of ideal optical and optoelectronic emitters, the key process is decay of band-edge excitons, which renders transient photoluminescence as important monitoring tool. On the basis of extensive synthetic developments in the past 20-30 years, synthetic control of exciton behavior implies surface engineering of quantum dots, including surface cation/anion stoichiometry, organic ligands, inorganic epitaxial shells, etc. For phosphors based on quantum dots doped with transition metal ions, concentration and location of the dopant ions within a nanocrystal lattice are found to be as important as control of the surface states in order to obtain bright dopant emission with monoexponential yet tunable photoluminescence decay dynamics.

Hydrophobic perfluoro-silane functionalization of porous silicon photoluminescent films and particles

Energy Technology Data Exchange (ETDEWEB)

Rodriguez, C.; Laplace, P.; Gallach-Pérez, D.; Pellacani, P.; Martín-Palma, R.J. [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Torres-Costa, V. [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Ceccone, G. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020, Ispra (Italy); Manso Silván, M., E-mail: miguel.manso@uam.es [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain)

2016-09-01

Highlights: • Hydrophobic functionalization of porous silicon structures. • Perfluorooctyl group binding confirmed by XPS. • Improved stability face to extreme oxidation conditions. • Perfluorooctyl functionalization compatible with photoluminescence of porous silicon particles. - Abstract: Luminescent structures based on semiconductor quantum dots (QDs) are increasingly used in biomolecular assays, cell tracking systems, and in-vivo diagnostics devices. In this work we have carried out the functionalization of porous silicon (PSi) luminescent structures by a perfluorosilane (Perfluoro-octyltriethoxysilane, PFOS) self assembly. The PFOS surface binding (traced by X-ray photoelectron spectroscopy) and photoluminescence efficiency were analyzed on flat model PSi. Maximal photoluminescence intensity was obtained from PSi layers anodized at 110 mA/cm{sup 2}. Resistance to hydroxylation was assayed in H{sub 2}O{sub 2}:ethanol solutions and evidenced by water contact angle (WCA) measurements. PFOS-functionalized PSi presented systematically higher WCA than untreated PSi. The PFOS functionalization was found to slightly improve the aging of the PSi particles in water giving rise to particles with longer luminescent life. Confirmation of PFOS binding to PSi particles was derived from FTIR spectra and the preservation of luminescence was observed by fluorescence microscopy. Such functionalization opens the possibility of promoting hydrophobic-hydrophobic interactions between biomolecules and fluorescent QD structures, which may enlarge their biomedical applications catalogue.

High-speed quantum networking by ship

Science.gov (United States)

Devitt, Simon J.; Greentree, Andrew D.; Stephens, Ashley M.; van Meter, Rodney

2016-11-01

Networked entanglement is an essential component for a plethora of quantum computation and communication protocols. Direct transmission of quantum signals over long distances is prevented by fibre attenuation and the no-cloning theorem, motivating the development of quantum repeaters, designed to purify entanglement, extending its range. Quantum repeaters have been demonstrated over short distances, but error-corrected, global repeater networks with high bandwidth require new technology. Here we show that error corrected quantum memories installed in cargo containers and carried by ship can provide a exible connection between local networks, enabling low-latency, high-fidelity quantum communication across global distances at higher bandwidths than previously proposed. With demonstrations of technology with sufficient fidelity to enable topological error-correction, implementation of the quantum memories is within reach, and bandwidth increases with improvements in fabrication. Our approach to quantum networking avoids technological restrictions of repeater deployment, providing an alternate path to a worldwide Quantum Internet.

Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes.

Science.gov (United States)

Shi, Teng; Jackson, Howard E; Smith, Leigh M; Jiang, Nian; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Zheng, Changlin; Etheridge, Joanne

2015-03-11

We use low-temperature photoluminescence, photoluminescence excitation, and photoluminescence imaging spectroscopy to explore the optical and electronic properties of GaAs/AlGaAs quantum well tube (QWT) heterostructured nanowires (NWs). We find that GaAs QWTs with widths >5 nm have electronic states which are delocalized and continuous along the length of the NW. As the NW QWT width decreases from 5 to 1.5 nm, only a single electron state is bound to the well, and no optical excitations to a confined excited state are present. Simultaneously, narrow emission lines (fwhm points along the length of the NW. We find that these quantum-dot-like states broaden at higher temperatures and quench at temperatures above 80 K. The lifetimes of these localized states are observed to vary from dot to dot from 160 to 400 ps. The presence of delocalized states and then localized states as the QWTs become more confined suggests both opportunities and challenges for possible incorporation into quantum-confined device structures.

Utilizing a CdTe quantum dots-enzyme hybrid system for the determination of both phenolic compounds and hydrogen peroxide.

Science.gov (United States)

Yuan, Jipei; Guo, Weiwei; Wang, Erkang

2008-02-15

In this paper, we attempt to construct a simple and sensitive detection method for both phenolic compounds and hydrogen peroxide, with the successful combination of the unique property of quantum dots and the specificity of enzymatic reactions. In the presence of H2O2 and horseradish peroxidase, phenolic compounds can quench quantum dots' photoluminescence efficiently, and the extent of quenching is severalfold to more than 100-fold increase. Quinone intermediates produced from the enzymatic catalyzed oxidation of phenolic compounds were believed to play the main role in the photoluminescence quenching. Using a quantum dots-enzyme system, the detection limits for phenolic compounds and hydrogen peroxide were detected to be approximately 10(-7) mol L(-1). The coupling of efficient quenching of quantum dot photoluminescence by quinone and the effective enzymatic reactions make this a simple and sensitive method for phenolic compound detection and great potential in the development of H2O2 biosensors for various analytes.

Energy transfer and visible-infrared quantum cutting photoluminescence modification in Tm-Yb codoped YPO(4) inverse opal photonic crystals.

Science.gov (United States)

Wang, Siqin; Qiu, Jianbei; Wang, Qi; Zhou, Dacheng; Yang, Zhengwen

2015-08-01

YPO4:  Tm, Yb inverse opal photonic crystals were successfully synthesized by the colloidal crystal templates method, and the visible-infrared quantum cutting (QC) photoluminescence properties of YPO4:  Tm, Yb inverse opal photonic crystals were investigated. We obtained tetragonal phase YPO4 in all the samples when the samples sintered at 950°C for 5 h. The visible emission intensity of Tm3+ decreased significantly when the photonic bandgap was located at 650 nm under 480 nm excitation. On the contrary, the QC emission intensity of Yb3+ was enhanced as compared with the no photonic bandgap sample. When the photonic bandgap was located at 480 nm, the Yb3+ and Tm3+ light-emitting intensity weakened at the same time. We demonstrated that the energy transfer between Tm3+ and Yb3+ is enhanced by the suppression of the red emission of Tm3+. Additionally, the mechanisms for the influence of the photonic bandgap on the energy transfer process of the Tm3+, Yb3+ codoped YPO4 inverse opal are discussed.

Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grown on GaAs substrate

International Nuclear Information System (INIS)

Motyka, M.; Kudrawiec, R.; Misiewicz, J.; Pucicki, D.; Tlaczala, M.; Fischer, M.; Marquardt, B.; Forchel, A.

2007-01-01

InAs quantum dots (QDs) with GaInNAs barriers grown on (001) GaAs substrate by molecular beam epitaxy have been studied by contactless electroreflectance (CER) and photoluminescence (PL) spectroscopies. It has been observed that the overgrowth of self-organized InAs QDs with GaInNAs layers effectively tunes the QD emission to the 1.3 μm spectral region. In case of PL spectra only one peak related to QD emission has been observed. In the case of CER spectra, in addition to a CER feature corresponding to the QD ground state, a rich spectrum of CER resonances related to optical transitions in InAs/GaInNAs/GaAs QW has been observed. It has been concluded that the application of GaInNAs instead InGaAs leads to better control of emission wavelength from InAs QDs since strains in GaInNAs can be tuned from compressive to tensile. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

Science.gov (United States)

Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

2016-03-01

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

Highly stable CsPbBr3 quantum dots coated with alkyl phosphate for white light-emitting diodes.

Science.gov (United States)

Xuan, Tongtong; Yang, Xianfeng; Lou, Sunqi; Huang, Junjian; Liu, Yong; Yu, Jinbo; Li, Huili; Wong, Ka-Leung; Wang, Chengxin; Wang, Jing

2017-10-19

Inorganic halide perovskite quantum dots (QDs) suffer from problems related to poor water stability and poor thermal stability. Here we developed a simple strategy to synthesize alkyl phosphate (TDPA) coated CsPbBr 3 QDs by using 1-tetradecylphosphonic acid both as the ligand for the CsPbBr 3 QDs and as the precursor for the formation of alkyl phosphate. These QDs not only retain a high photoluminescence quantum yield (PLQY, 68%) and narrow band emission (FHWM ∼ 22 nm) but also exhibit high stability against water and heat. The relative PL intensity of the QDs was maintained at 75% or 59% after being dispersed in water for 5 h or heated to 375 K (100 °C), respectively. Finally, white light-emitting diodes (WLEDs) with a high luminous efficiency of 63 lm W -1 and a wide color gamut (122% of NTSC) were fabricated by using green-emitting CsPbBr 3 /TDPA QDs and red-emitting K 2 SiF 6 :Mn 4+ phosphors as color converters. The luminous efficiency of the WLEDs remained at 90% after working under a relative humidity (RH) of 60% for 15 h, thereby showing promise for use as backlight devices in LCDs.

Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells

Energy Technology Data Exchange (ETDEWEB)

Park, Kwangwook [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Ju, Gunwu [Gwangju Institute of Science and Technology; Korea Institute of Science and Technology; Na, Byung Hoon [Samsung Advanced Institute of Technology; Hwang, Hyeong-Yong [Gwangju Institute of Science and Technology; Jho, Young-Dahl [Gwangju Institute of Science and Technology; Myoung, NoSoung [Gwangju Institute of Science and Technology; Yim, Sang-Youp [Gwangju Institute of Science and Technology; Kim, Hyung-jun [Korea Institute of Science and Technology; Lee, Yong Tak [Gwangju Institute of Science and Technology

2018-02-06

We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.

Optical spectroscopy of GaAs in the extreme quantum limit: Integer and fractional quantum Hall effect, and onset of the electron solid

Energy Technology Data Exchange (ETDEWEB)

Clark, R.G.; Ford, R.A.; Haynes, S.R.; Ryan, J.F.; Turberfield, A.J.; Wright, P.A. (Clarendon Lab., Univ. of Oxford (UK)); Williams, F.I.B.; Deville, G.; Glattli, D.C. (CEN de Saclay, 91 - Gif-sur-Yvette (France)); Mallett, J.R.; Oswald, P.M.W. (Clarendon Lab., Univ. of Oxford (UK) Katholieke Univ. Leuven (Belgium)); Burgt, M. van der; Herlach, F. (Katholieke Univ. Leuven (Belgium)); Foxon, C.T.; Harris, J.J. (Philips Research Labs., Redhill (UK))

1991-02-01

Our recent optical detection of the integer and fractional quantum Hall effects in GaAs, by intrinsic band-gap photoluminescence at dilution refrigerator temperatures, is reviewed. This work has been extended to the extreme quantum limit where a photoluminescence peak develops close to Landau level filling factor {nu}=1/5 which correlates both with the onset of threshold behaviour in current-voltage characteristics of the two-dimensional electron system and a resonant radio-frequency absorption; the latter are quantitatively accounted for by a model of crystalline electronic structure broken up into domains. Preliminary mK transport experiments in intense, pulsed magnetic fields are also described, which establish a basis to access the electron solid phase transition in a hitherto unattainable region of the (B,T) plane. (orig.).

The influence of nitrogen on the photoluminescence of metastable III-V nitrides

International Nuclear Information System (INIS)

Hantke, K.

2005-01-01

The work presented here mainly summarizes experimental and theoretical results enlightening the material-specific, optical properties of (GaIn)(NAs). The primarily used experiment is the time-resolved photoluminescence spectroscopy. The comparison of experiment and theory yields a simple exponential form for the density of localized states. Furthermore it can be confirmed that the typical energy scale of the localization is diminished by the annealing step as well as by the hydrogenation process. In a next step, the investigation of (GaIn)(NAs) epitactical layers, that were optimized for solar cell application, reveals astonishing features: The minority-carrier diffusion-length of the p-doped layers is found to be slightly higher than for the n-doped material implying that (GaIn)(NAs) solar cells with a p-on-n structure should be preferred in terms of higher quantum efficiency. A new effect found during the investigations is the optimization of the internal quantum efficiency of the (GaIn)(NAs) structures after irradiation with intensive laser light attributed to the laser-induced annealing of defects. The final paragraph concentrates on the successful comparison of time-resolved photoluminescence, photo-modulated reflection measurements and a microscopic many-body theory. A profound understanding of the type-I type-II transition in (GaIn)As/Ga(NAs) heterostructures is achieved resulting in material-specific information as e.g. the temperature-dependent bandgap energies, the band offsets in Ga(NAs)/GaAs and (GaIn)As/Ga(NAs) respectively, as well as the interaction potential VN dependent on the nitrogen content. Finally, the fundamental dependence on excitation density investigated in the experiment is theoretically quantified not only for the photoluminescence intensity and but for the lifetimes, too. (orig.)

Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing

International Nuclear Information System (INIS)

Davis, J A; Dao, L V; Wen, X; Ticknor, C; Hannaford, P; Coleman, V A; Tan, H H; Jagadish, C; Koike, K; Sasa, S; Inoue, M; Yano, M

2008-01-01

Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate.

Science.gov (United States)

Muhammed, Mufasila M; Alwadai, Norah; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S

2017-10-04

We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga 2 O 3 ) substrate, obtained using a straightforward growth process that does not require a high-cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multiquantum well (MQW) grown on the masked β-Ga 2 O 3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ∼86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

InAs quantum wires on InP substrate for VCSEL applications

OpenAIRE

Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

2008-01-01

International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

Characterization of interfaces in semimagnetic quantum wells

Energy Technology Data Exchange (ETDEWEB)

Schmitt, G.; Kuhn-Heinrich, B.; Zehnder, U.; Ossau, W.; Litz, T.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)

1995-12-31

The interfaces between nonmagnetic CdTe quantum wells and semimagnetic barriers of Cd{sub 1-x}Mn{sub x}Te were investigated for several well widths by low temperature photoluminescence and photoluminescence excitation spectroscopy. Specially designed Cd{sub 1-x}Mn{sub x}/CdTe/Cd{sub 1-y} Mg{sub y}Te structures enable us to distinguish the quality of semimagnetic normal and inverted interfaces. The normal interface shows to better structural quality than the inverted interface. (author). 5 refs, 2 figs, 1 tab.

Brightly Luminescent and Color-Tunable Colloidal CH3NH3PbX3 (X = Br, I, Cl) Quantum Dots: Potential Alternatives for Display Technology.

Science.gov (United States)

Zhang, Feng; Zhong, Haizheng; Chen, Cheng; Wu, Xian-gang; Hu, Xiangmin; Huang, Hailong; Han, Junbo; Zou, Bingsuo; Dong, Yuping

2015-04-28

Organometal halide perovskites are inexpensive materials with desirable characteristics of color-tunable and narrow-band emissions for lighting and display technology, but they suffer from low photoluminescence quantum yields at low excitation fluencies. Here we developed a ligand-assisted reprecipitation strategy to fabricate brightly luminescent and color-tunable colloidal CH3NH3PbX3 (X = Br, I, Cl) quantum dots with absolute quantum yield up to 70% at room temperature and low excitation fluencies. To illustrate the photoluminescence enhancements in these quantum dots, we conducted comprehensive composition and surface characterizations and determined the time- and temperature-dependent photoluminescence spectra. Comparisons between small-sized CH3NH3PbBr3 quantum dots (average diameter 3.3 nm) and corresponding micrometer-sized bulk particles (2-8 μm) suggest that the intense increased photoluminescence quantum yield originates from the increase of exciton binding energy due to size reduction as well as proper chemical passivations of the Br-rich surface. We further demonstrated wide-color gamut white-light-emitting diodes using green emissive CH3NH3PbBr3 quantum dots and red emissive K2SiF6:Mn(4+) as color converters, providing enhanced color quality for display technology. Moreover, colloidal CH3NH3PbX3 quantum dots are expected to exhibit interesting nanoscale excitonic properties and also have other potential applications in lasers, electroluminescence devices, and optical sensors.

Practical considerations for solar energy thermally enhanced photo-luminescence (TEPL) (Conference Presentation)

Science.gov (United States)

Kruger, Nimrod; Manor, Assaf; Kurtulik, Matej; Sabapathy, Tamilarasan; Rotschild, Carmel

2017-04-01

While single-junction photovoltaics (PV's) are considered limited in conversion efficiency according to the Shockley-Queisser limit, concepts such as solar thermo-photovoltaics aim to harness lost heat and overcome this barrier. We claim the novel concept of Thermally Enhanced Photoluminescence (TEPL) as an easier route to achieve this goal. Here we present a practical TEPL device where a thermally insulated photo-luminescent (PL) absorber, acts as a mediator between a photovoltaic cell and the sun. This high temperature absorber emits blue-shifted PL at constant flux, then coupled to a high band gap PV cell. This scheme promotes PV conversion efficiencies, under ideal conditions, higher than 62% at temperatures lower than 1300K. Moreover, for a PV and absorber band-gaps of 1.45eV (GaAs PV's) and 1.1eV respectively, under practical conditions, solar concentration of 1000 suns, and moderate thermal insulation; the conversion efficiencies potentially exceed 46%. Some of these practical conditions belong to the realm of optical design; including high photon recycling (PR) and absorber external quantum efficiency (EQE). High EQE values, a product of the internal QE of the active PL materials and the extraction efficiency of each photon (determined by the absorber geometry and interfaces), have successfully been reached by experts in laser cooling technology. PR is the part of emitted low energy photons (in relation to the PV band-gap) that are reabsorbed and consequently reemitted with above band-gap energies. PV back-reflector reflectivity, also successfully achieved by those who design the cutting edge high efficiency PV cells, plays a major role here.

Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Alderighi, D.; Vinattieri, A.; Colocci, M. [Ist. Nazionale Fisica della Materia, Firenze (Italy); Dipt. di Fisica and LENS, Firenze (Italy); Bogani, F. [Ist. Nazionale Fisica della Materia, Firenze (Italy); Dipt. di Energetica, Firenze (Italy); Gottardo, S. [Dipt. di Fisica and LENS, Firenze (Italy); Grandjean, N.; Massies, J. [Centre de Recherche sur l' Hetero-Epitaxie et ses Applications, CNRS, Valbonne (France)

2001-01-01

We present an experimental study of the exciton and phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells (QW) by means of picosecond time-resolved photoluminescence (PL) measurements. A non-exponential decay is observed both at the zero phonon line (ZPL) and at the n = 1 LO replica. Time-resolved spectra unambiguously assign the replica to the free exciton A recombination. Optical migration effects are detected both in the epilayer and the QWs samples and disappear as the temperature increases up to 60-90 K. Even though the sample quality is comparable to state-of-the-art samples, localization effects dominate the exciton dynamics at low temperature in the studied GaN based structures. (orig.)

Electroluminescence of colloidal ZnSe quantum dots

International Nuclear Information System (INIS)

Dey, S.C.; Nath, S.S.

2011-01-01

The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet). - Highlights: → Synthesis of ZnSe quantum dots by a green chemical route. → Characterisation: UV-vis absorption spectroscopy and transmission electron microscopy. → Analysis of UV-vis absorption spectrum and transmission electron micrographs. → Study of electro-optical properties by photoluminescence and electroluminescence. → Conclusion: ZnSe quantum dots can be used as LED with dual colour emission.

Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

NARCIS (Netherlands)

de Boer, W.D.A.M.; McGonigle, C.; Gregorkiewicz, T.; Fujiwara, Y.; Stallinga, P.

2014-01-01

We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of

Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Ristic, J.; Calleja, E.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Sanchez-Paramo, J.; Calleja, J.M.; Jahn, U.; Trampert, A.; Ploog, K.H.

2003-01-01

GaN quantum discs embedded in AlGaN nanocolumns with outstanding crystal quality and very high luminescence efficiency were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy under highly N-rich conditions. Nanocolumns with diameters in the range of 30-150 nm, with no traces of any extended defects, as confirmed by transmission electron microscopy, were obtained. GaN quantum discs, 2 and 4 nm thick, were grown embedded in AlGaN nanocolumns by switching on and off the Al flux during variable time spans. Strong optical emissions from GaN quantum discs, observed by photoluminescence and cathodoluminescence measurements, reveal quantum confinement effects. While Raman data indicate that the nanocolumns are fully relaxed, the quantum discs appear to be fully strained. These nanostructures have a high potential for application in efficient vertical cavity emitters

High resolution STEM of quantum dots and quantum wires

DEFF Research Database (Denmark)

Kadkhodazadeh, Shima

2013-01-01

This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...

Electronic properties of excited states in single InAs quantum dots

International Nuclear Information System (INIS)

Warming, Till

2009-01-01

The application of quantum-mechanical effects in semiconductor nanostructures enables the realization of novel opto-electronic devices. Examples are given by single-photon emitters and emitters of entangled photon pairs, both being essential for quantum cryptography, or for qubit systems as needed for quantum computing. InAs/GaAs quantum dots are one of the most promising candidates for such applications. A detailed knowledge of the electronic properties of quantum dots is a prerequisite for this development. The aim of this work is an experimental access to the detailed electronic structure of the excited states in single InAs/GaAs quantum dots including few-particle effects and in particular exchange interaction. The experimental approach is micro photoluminescence excitation spectroscopy (μPLE). One of the main difficulties using μPLE to probe single QDs is the unambiguous assignment of the observed resonances in the spectrum to specific transitions. By comparing micro photoluminescence (μPL) and μPLE spectra, the identification of the main resonances becomes possible. The key is given by the fine structure of the hot trion. Excitation spectroscopy on single charged QDs enables for the first time the complete observation of a non-trivial fine structure of an excitonic complex in a QD, the hot trion. Modelling based on eight-band k.p theory in combination with a configuration interaction scheme is in excellent agreement. Therewith the simulation also enables realistic predictions on the fine structure of the ground-state exciton which is of large importance for single quantum dot devices. Theory concludes from the observed transitions that the structural symmetry of the QDs is broken. Micro photoluminescence excitation spectroscopy combined with resonantly excited micro photoluminescence enables an optical access to the single particle states of the hole without the influence of few-particle coulomb interactions. Based on this knowledge the exciton binding

Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells

International Nuclear Information System (INIS)

Wang, L.S.; Sun, W.H.; Chua, S.J.; Johnson, Mark

2003-01-01

The GaN/AlGaN multi-quantum-wells (MQWs) have been grown via metalorganic chemical vapor deposition (MOCVD). Micro-photoluminescence (PL) measurement has been performed on non-, In- and Si- doped GaN/AlGaN MQW samples in the temperature ranges of 90-300 K. In the non-doped GaN/AlGaN MQWs we observed the free exciton peak at 3.4587 eV at 90 K. Other exciton related peaks are located at 3.4346, 3.4177, 3.394 and 3.3129 eV, which are probably associated with the strongly localized excitons involving the defects. In In-doped GaN/AlGaN MQWs, the free exciton peaks have a slight red-shift from 3.4712 to 3.4629 eV, but the PL intensities become stronger with increasing trimethylindium (TMIn) flow from 10.6 to 42.6 μmol min -1 . With Si-doping in the well layers, PL exhibits an envelope of exciton bands ranged from 3.4796 (free exciton) to 3.43915 eV. The excitonic peaks in the bands vary in intensity and position with sample temperature. In addition, we have also observed the LO phonon replica of AlGaN interacted by the laser line due to the resonance effect

Composition-dependent trap distributions in CdSe and InP quantum dots probed using photoluminescence blinking dynamics.

Science.gov (United States)

Chung, Heejae; Cho, Kyung-Sang; Koh, Weon-Kyu; Kim, Dongho; Kim, Jiwon

2016-07-21

Although Group II-VI quantum dots (QDs) have attracted much attention due to their wide range of applications in QD-based devices, the presence of toxic ions in II-VI QDs raises environmental concerns. To fulfill the demands of nontoxic QDs, synthetic routes for III-V QDs have been developed. However, only a few comparative analyses on optical properties of III-V QDs have been performed. In this study, the composition-related energetic trap distributions have been explored by using three different types of core/multishell QDs: CdSe-CdS (CdSe/CdS/ZnS), InP-ZnSe (InP/ZnSe/ZnS), and InP-GaP (InP/GaP/ZnS). It was shown that CdSe-CdS QDs have much larger trap densities than InP-shell QDs at higher energy states (at least 1Eg (band gap energy) above the lowest conduction band edge) based on probability density plots and Auger ionization efficiencies which are determined by analyses of photoluminescence blinking dynamics. This result suggests that the composition of encapsulated QDs is closely associated with the charge trapping processes, and also provides an insight into the development of more environmentally friendly QD-based devices.

Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Kalyuzhnyy, N. A.; Nadtochiy, A. M.; Maximov, M. V. [St. Petersburg Academic University (Russian Federation); Rouvimov, S. S. [University of Notre Dame (United States); Zhukov, A. E. [St. Petersburg Academic University (Russian Federation)

2017-03-15

The deposition of In{sub x}Ga{sub 1–x}As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In{sub x}Ga{sub 1–x}As thicknesses and compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.

Temporal evolution of multi-carrier complexes in single GaN/AlGaN quantum dots

International Nuclear Information System (INIS)

Surowiecka, K.; Wysmolek, A.; Stepniewski, R.; Bozek, R.; Pakula, K.; Baranowski, J.M.

2005-01-01

Micro photoluminescence of low-density GaN/Al x Ga 1-x N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the micro photoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify objects, which are affected by photo-induced electric field fluctuations. Relations between emission lines participating in the spectrum are discussed. (author)

Ligand-assisted fabrication, structure, and luminescence properties of Fe:ZnSe quantum dots

International Nuclear Information System (INIS)

Xie, Ruishi; Zhang, Xingquan; Liu, Haifeng

2014-01-01

Highlights: • A green route is developed for synthesis of water-soluble and fluorescent Fe:ZnSe quantum dots. • Tunable luminescence intensity can be realized with different ligand-to-Zn molar ratios. • The obtained quantum dots are in the so-called “quantum confinement regime”. -- Abstract: Here, we report a synthetic route for highly emissive Fe:ZnSe quantum dots in aqueous media using the mercaptoacetic acid ligand as stabilizing agent. The structural, morphological, componential, and optical properties of the resulting quantum dots were explored by the X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence and UV–visible absorption spectroscopies. The average crystallite size was calculated to be about ca., 4.0 nm using the Scherrer equation, which correlates well with the value obtained from the transmission electron microscopy analysis. The obtained water-soluble Fe:ZnSe quantum dots in the so-called “quantum confinement regime” are spherical shaped, possess the cubic sphalerite crystal structure, and exhibit tunable luminescence properties. The presence of mercaptoacetic acid on the surface of Fe:ZnSe quantum dots was confirmed by the Fourier transform infrared spectroscopy measurements. As the ligand/Zn molar ratio increases from 1.3 to 2.8, there is little shift in the absorption peak of the Fe:ZnSe sample, indicating that the particle size of the obtained quantum dots is not changed during the synthetic process. The photoluminescence quantum yield of the as-prepared water-soluble Fe:ZnSe quantum dots can be up to 39%. The molar ratio of ligand-to-Zn plays a crucial role in determining the final luminescence properties of the resulting quantum dots, and the maximum PL intensity appears as the ligand-to-Zn molar ratio is 2.2. In addition, the underlying mechanism for

Ligand-assisted fabrication, structure, and luminescence properties of Fe:ZnSe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Xie, Ruishi, E-mail: rxie@foxmail.com; Zhang, Xingquan; Liu, Haifeng

2014-03-15

Highlights: • A green route is developed for synthesis of water-soluble and fluorescent Fe:ZnSe quantum dots. • Tunable luminescence intensity can be realized with different ligand-to-Zn molar ratios. • The obtained quantum dots are in the so-called “quantum confinement regime”. -- Abstract: Here, we report a synthetic route for highly emissive Fe:ZnSe quantum dots in aqueous media using the mercaptoacetic acid ligand as stabilizing agent. The structural, morphological, componential, and optical properties of the resulting quantum dots were explored by the X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence and UV–visible absorption spectroscopies. The average crystallite size was calculated to be about ca., 4.0 nm using the Scherrer equation, which correlates well with the value obtained from the transmission electron microscopy analysis. The obtained water-soluble Fe:ZnSe quantum dots in the so-called “quantum confinement regime” are spherical shaped, possess the cubic sphalerite crystal structure, and exhibit tunable luminescence properties. The presence of mercaptoacetic acid on the surface of Fe:ZnSe quantum dots was confirmed by the Fourier transform infrared spectroscopy measurements. As the ligand/Zn molar ratio increases from 1.3 to 2.8, there is little shift in the absorption peak of the Fe:ZnSe sample, indicating that the particle size of the obtained quantum dots is not changed during the synthetic process. The photoluminescence quantum yield of the as-prepared water-soluble Fe:ZnSe quantum dots can be up to 39%. The molar ratio of ligand-to-Zn plays a crucial role in determining the final luminescence properties of the resulting quantum dots, and the maximum PL intensity appears as the ligand-to-Zn molar ratio is 2.2. In addition, the underlying mechanism for

Polyaniline/carbon nanotube/CdS quantum dot composites with enhanced optical and electrical properties

Science.gov (United States)

Goswami, Mrinmoy; Ghosh, Ranajit; Maruyama, Takahiro; Meikap, Ajit Kumar

2016-02-01

A new kind of polyaniline/carbon nanotube/CdS quantum dot composites have been developed via in-situ polymerization of aniline monomer in the presence of dispersed CdS quantum dots (size: 2.7-4.8 nm) and multi-walled carbon nanotubes (CNT), which exhibits enhanced optical and electrical properties. The existences of 1st order, 2nd order, and 3rd order longitudinal optical phonon modes, strongly indicate the high quality of synthesized CdS quantum dots. The occurrence of red shift of free exciton energy in photoluminescence is due to size dependent quantum confinement effect of CdS. The conductivity of the composites (for example PANI/CNT/CdS (2 wt.% CdS)) is increased by about 7 of magnitude compared to that of pure PANI indicating a charge transfer between CNT and polymer via CdS quantum dots. This advanced material has a great potential for high-performance of electro-optical applications.

Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

Energy Technology Data Exchange (ETDEWEB)

Gauthier, J.-P.; Almosni, S.; Léger, Y.; Perrin, M.; Even, J.; Cornet, C., E-mail: charles.cornet@insa-rennes.fr; Durand, O. [UMR FOTON, CNRS, INSA-Rennes, F-35708 Rennes (France); Robert, C. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Balocchi, A.; Carrère, H.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, F-31077 Toulouse (France)

2014-12-15

We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.

Photo-stability of CsPbBr3 perovskite quantum dots for optoelectronic application

NARCIS (Netherlands)

Chen, Junsheng; Liu, Dongzhou; Al-Marri, Mohammed J.; Nuuttila, Lauri; Lehtivuori, Heli; Zheng, Kaibo

Due to their superior photoluminescence (PL) quantum yield (QY) and tunable optical band gap, all-inorganic CsPbBr3 perovskite quantum dots (QDs) have attracted intensive attention for the application in solar cells, light emitting diodes (LED), photodetectors and laser devices. In this scenario,

Highly efficient electroluminescence from a solution-processable thermally activated delayed fluorescence emitter

Energy Technology Data Exchange (ETDEWEB)

Wada, Yoshimasa; Kubo, Shosei; Suzuki, Katsuaki; Kaji, Hironori, E-mail: kaji@scl.kyoto-u.ac.jp [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Shizu, Katsuyuki [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Tanaka, Hiroyuki [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Adachi, Chihaya [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan)

2015-11-02

We developed a thermally activated delayed fluorescence (TADF) emitter, 2,4,6-tris(4-(9,9-dimethylacridan-10-yl)phenyl)-1,3,5-triazine (3ACR-TRZ), suitable for use in solution-processed organic light-emitting diodes (OLEDs). When doped into 4,4′-bis(carbazol-9-yl)biphenyl (CBP) host at 16 wt. %, 3ACR-TRZ showed a high photoluminescence quantum yield of 98%. Transient photoluminescence decay measurements of the 16 wt. % 3ACR-TRZ:CBP film confirmed that 3ACR-TRZ exhibits efficient TADF with a triplet-to-light conversion efficiency of 96%. This high conversion efficiency makes 3ACR-TRZ attractive as an emitting dopant in OLEDs. Using 3ACR-TRZ as an emitter, we fabricated a solution-processed OLED exhibiting a maximum external quantum efficiency of 18.6%.

Conditions giving rise to intense visible room temperature photoluminescence in SrWO4 thin films: the role of disorder

International Nuclear Information System (INIS)

Orhan, E.; Anicete-Santos, M.; Maurera, M.A.M.A.; Pontes, F.M.; Paiva-Santos, C.O.; Souza, A.G.; Varela, J.A.; Pizani, P.S.; Longo, E.

2005-01-01

The nature of intense visible photoluminescence at room temperature of SrWO 4 (SWO) non-crystalline thin films is discussed in the light of experimental results and theoretical calculations. The SWO thin films were synthesized by the polymeric precursors method. Their structural properties have been obtained by X-ray diffraction data and the corresponding photoluminescence (PL) spectra have been measured. The UV-vis optical spectra measurements suggest the creation of localized states in the disordered structure. The photoluminescence measurements reveal that the PL changes with the degree of disorder in the SWO thin film. To understand the origin of visible PL at room temperature in disordered SWO, we performed quantum-mechanical calculations on crystalline and disordered SWO periodic models. Their electronic structures are analyzed in terms of DOS, band dispersion and charge densities. We used DFT method with the hybrid non-local B3LYP approximation. The polarization induced by the symmetry break and the existence of localized levels favors the creation of trapped holes and electrons, giving origin to the room temperature photoluminescence phenomenon in the SWO thin films

Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers

International Nuclear Information System (INIS)

McKerracher, Ian; Fu Lan; Hoe Tan, Hark; Jagadish, Chennupati

2012-01-01

Various approaches can be used to selectively control the amount of intermixing in III-V quantum well and quantum dot structures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dot structures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiO x N y films. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model.

Tailoring the Crystal Structure of Nanoclusters Unveiled High Photoluminescence via Ion Pairing

KAUST Repository

Bootharaju, Megalamane Siddaramappa

2018-03-26

The lack of structurally distinct nanoclusters (NCs) of identical size and composition prevented the mechanistic understanding of their structural effects on ion pairing and concomitant optical properties. To produce such highly sought NCs, we designed a new monothiolate-for-dithiolate exchange strategy that enabled the selective transformation of the structure of a NC without affecting its metal atomicity or composition. Through this method, a bimetallic [PtAg28(BDT)12(PPh3)4]4– NC (1) was successfully synthesized from [PtAg28(S-Adm)18(PPh3)4]2+ NC (2) (S-Adm, 1-adamantanethiolate; BDT, 1,3-benzenedithiolate; PPh3, triphenylphosphine). The determined X-ray crystal structure of 1 showed a PtAg12 icosahedron core and a partially exposed surface, which are distinct from a face-centered cubic PtAg12 core and a fully covered surface of 2. We reveal through mass spectrometry (MS) that 1 forms ion pairs with counterions attracted by the core charge of the cluster, which is in line with density functional simulations. The MS data for 1, 2, and other NCs suggested that such attraction is facilitated by the exposed surface of 1. The formation of ion pairs increases the photoluminescence (PL) quantum yield of 1 up to 17.6% depending on the bulkiness of the counterion. Unlike small counterions, larger ones are calculated to occupy ≤90% of the volume near the exposed cluster surface and to make the ligand shell of 1 more rigid, which is observed to increase the PL. Thus, the developed synthesis strategy for structurally different NCs of the same size and composition allows us to probe the structure–property relationship for ion pairing and concomitant PL enhancement.

Colloidal quantum dot photovoltaics: The effect of polydispersity

KAUST Repository

Zhitomirsky, David; Kramer, Illan J.; Labelle, André J.; Fischer, Armin H.; Debnath, Ratan K.; Pan, Jun; Bakr, Osman; Sargent, E. H.

2012-01-01

, the dependence of both open-circuit voltage and photoluminescence behavior on the density of small-bandgap (large-diameter) quantum dot inclusions. The model requires inclusion of trap states to explain the experimental data quantitatively. We then explore using

Studies on highly luminescent AgInS{sub 2} and Ag–Zn–In–S quantum dots

Energy Technology Data Exchange (ETDEWEB)

Xiang, Weidong, E-mail: xiangweidong001@126.com [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); College of Materials Science and Engineering, Tongji University, Shanghai 201804 (China); Xie, Cuiping; Wang, Jing; Zhong, Jiasong; Liang, Xiaojuan; Yang, Hailong; Luo, Le [College of Materials Science and Engineering, Tongji University, Shanghai 201804 (China); Chen, Zhaoping [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China)

2014-03-05

Highlights: • The quantum yield of the obtained ternary AgInS{sub 2} QDs was up to 62% with the emission peak of 642 nm under the excitation of 460 nm. • Colorful luminescent Ag–Zn–In–S QDs were obtained by adding Zn salts directly as well as Ag and In precursors. • The obtained highly luminescent quantum dots showed promising applications in the white light emitting diodes (W-LED). • The electroluminescence (EL) of AgInS{sub 2} QDs was observed in QD-LED device. -- Abstract: Silver indium sulfide (AIS) quantum dots (QDs) with different Ag/In molar ratios were synthesized via a hot-injection method. Intense photoluminescence (PL) originating from the donor–acceptor pair recombination were observed for all the samples and the emission peak blue-shifted from 739 to 632 nm, being similar to the behavior of the absorption onset as the Ag/In ratios decreased. The highest PL quantum yield (QY) of the obtained ternary AIS QDs was ca. 62% with an optimum ratio of Ag/In = 1/4. Compared with AIS QDs, when Zn ions were introduced, the absorption spectra of the obtained quaternary Ag–Zn–In–S QDs were blue-shifted, and their emission peaks moved to higher energies accordingly, showing a tunable emission from red to green by altering the band gap energy. In order to further study the electroluminescence (EL) as well as looking forward to the applications in the optoelectronic devices of the obtained highly luminescent nanoparticles, the colloidal AIS QDs were deposited as thin films to the sandwich-like structured QD-LED. The experimental results showed that the obtained EL device exhibited EL emission originated from QDs thin films by adjusting the turn on voltage, which is for the first time to realize EL of AIS QDs in such QD-LED.

Luminescent passive-oxidized silicon quantum dots as biological staining labels and their cytotoxicity effects at high concentration

International Nuclear Information System (INIS)

Fujioka, Kouki; Manabe, Noriyoshi; Hanada, Sanshiro; Hoshino, Akiyoshi; Yamamoto, Kenji; Hiruoka, Masaki; Sato, Keisuke; Hirakuri, Kenji; Miyasaka, Ryosuke; Tilley, Richard D; Manome, Yoshinobu

2008-01-01

Semiconductor quantum dots (QDs) hold some advantages over conventional organic fluorescent dyes. Due to these advantages, they are becoming increasingly popular in the field of bioimaging. However, recent work suggests that cadmium based QDs affect cellular activity. As a substitute for cadmium based QDs, we have developed photoluminescent stable silicon quantum dots (Si-QDs) with a passive-oxidation technique. Si-QDs (size: 6.5 ± 1.5 nm) emit green light, and they have been used as biological labels for living cell imaging. In order to determine the minimum concentration for cytotoxicity, we investigated the response of HeLa cells. We have shown that the toxicity of Si-QDs was not observed at 112 μg ml -1 and that Si-QDs were less toxic than CdSe-QDs at high concentration in mitochondrial assays and with lactate dehydrogenase (LDH) assays. Especially under UV exposure, Si-QDs were more than ten times safer than CdSe-QDs. We suggest that one mechanism for the cytotoxicity is that Si-QDs can generate oxygen radicals and these radicals are associated with membrane damages. This work has demonstrated the suitability of Si-QDs for bioimaging in lower concentration, and their cytotoxicity and one toxicity mechanism at high concentration

Photo-physical properties enhancement of bare and core-shell quantum dots

Energy Technology Data Exchange (ETDEWEB)

Mumin, Md Abdul, E-mail: pcharpentier@eng.uwo.ca; Akhter, Kazi Farida, E-mail: pcharpentier@eng.uwo.ca; Charpentier, Paul A., E-mail: pcharpentier@eng.uwo.ca [Chemical and Biochemical Engineering, Western University, London Ontario (Canada)

2014-03-31

Semiconductor nanocrystals (NCs) (also known as quantum dots, QDs) have attracted immense attention for their size-tunable optical properties that makes them impressive candidates for solar cells, light emitting devices, lasers, as well as biomedical imaging. However monodispersity, high and consistent photoluminescence, photostability, and biocompatibility are still major challenges. This work focuses on optimizing the photophysical properties and biocompatibility of QDs by forming core-shell nanostructures and their encapsulation by a carrier. Highly luminescent CdS and CdS-ZnS core-shell QDs with 5 nm sizes were synthesized using a facile approach based on pyrolysis of the single molecule precursors. After capping the CdS QDs with a thin layer of ZnS to reduce toxicity, the photoluminescence and photostability of the core-shell QDs was significantly enhanced. To make both the bare and core/shell structure QDs more resistant against photochemical reactions, a mesoporous silica layer was grown on the QDs through a reverse microemulsion technique based on hydrophobic interaction. This encapsulation enhanced the quantum yield and photostability compared to the bare QDs by providing much stronger resistance to oxidation and Oswald ripening of QDs. Encapsulation also improved biocompatibility of QDs that was evaluated with human umbilical vein endothelial cell lines (HUVEC)

Photoluminescence of ultra-high molecular weight polyethylene modified by fast atom bombardment

International Nuclear Information System (INIS)

Toth, S.; Fuele, M.; Veres, M.; Pocsik, I.; Koos, M.; Toth, A.; Ujvari, T.; Bertoti, I.

2006-01-01

An increase in the application potential of the ultra-high molecular weight polyethylene (UHMWPE) may be achieved by producing a hard, wear resistant carbonaceous modified surface layer on it. In this study the surface of UHMWPE samples was treated by 1 keV N, H and He fast atom bombardment (FAB) to obtain amorphous carbon surface layer which produces an enhancement of microhardness. The untreated and FAB-modified samples were investigated by photoluminescence, infrared, Raman and optical absorption spectroscopy. The FAB-treatment caused a nearly complete disappearance of the characteristic luminescence bands of UHMWPE (at 335, 351, 363 and 381 nm), the appearance of new bands at 459 and 495 nm due to the formation of new recombination levels in the FAB-treated samples. The remarkable decrease in integrated luminescence intensity indicates the appearance of new non-radiative recombination levels caused by FAB treatment. Structural modifications in FAB treated samples result in the development of structural arrangement containing sp 2 bonded carbon sites in rings or chains of different sizes and the electronic levels corresponding to these structural elements are situated in the forbidden gap in the electronic density of states which brings forth the observed changes of the photoluminescence properties

Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells

Energy Technology Data Exchange (ETDEWEB)

Li, Tian, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu; Dagenais, Mario, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu [Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742 (United States); Lu, Haofeng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)

2015-02-02

Reduced quantum dot (QD) absorption due to state filling effects and enhanced electron transport in doped QDs are demonstrated to play a key role in solar energy conversion. Reduced QD state absorption with increased n-doping is observed in the self-assembled In{sub 0.5}Ga{sub 0.5}As/GaAs QDs from high resolution below-bandgap external quantum efficiency (EQE) measurement, which is a direct consequence of the Pauli exclusion principle. We also show that besides partial filling of the quantum states, electron-doping produces negatively charged QDs that exert a repulsive Coulomb force on the mobile electrons, thus altering the electron trajectory and reducing the probability of electron capture, leading to an improved collection efficiency of photo-generated carriers, as indicated by an absolute above-bandgap EQE measurement. The resulting redistribution of the mobile electron in the planar direction is further validated by the observed photoluminescence intensity dependence on doping.

GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

NARCIS (Netherlands)

Ulloa Herrero, J.M.; Gargallo-Caballero, R.; Bozkurt, M.; Moral, del M.; Guzman, A.; Koenraad, P.M.; Hierro, A.

2010-01-01

The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum dots (QDs) are shown to be strongly correlated with structural changes. The observed redshift of the photoluminescence emission is shown to follow two different regimes. In the first regime, with Sb concentrations up

High-density InAs/GaAs{sub 1−x}Sb{sub x} quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

Energy Technology Data Exchange (ETDEWEB)

Debnath, M. C., E-mail: mdebnath@cnsi.ucla.edu [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States); California NanoSystems Institute and Electrical Engineering Department, University of California-Los Angeles (UCLA), Los Angeles, California 90095 (United States); Mishima, T. D.; Santos, M. B.; Cheng, Y.; Whiteside, V. R.; Sellers, I. R. [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States); Hossain, K. [Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); Laghumavarapu, R. B.; Liang, B. L.; Huffaker, D. L. [California NanoSystems Institute and Electrical Engineering Department, University of California-Los Angeles (UCLA), Los Angeles, California 90095 (United States)

2016-03-21

InAs quantum-dot structures were grown using a GaAs{sub 1−x}Sb{sub x} matrix on a GaAs(001) substrate. The use of GaAs{sub 1−x}Sb{sub x} for the buffer and cap layers effectively suppressed coalescence between dots and significantly increased the dot density. The highest density (∼3.5 × 10{sup 11}/cm{sup 2}) was obtained for a nominal 3.0 monolayer deposition of InAs with an Sb composition of x = 13–14% in the GaAs{sub 1−x}Sb{sub x} matrix. When the Sb composition was increased to 18%, the resulting large photoluminescent red shift (∼90 meV) indicated the release of compressive strain inside the quantum dots. For x > 13%, we observed a significant decrease in photoluminescence intensity and an increase in the carrier lifetime (≥4.0 ns). This is attributed to the type-II band alignment between the quantum dots and matrix material.

Use of CdS quantum dot-functionalized cellulose nanocrystal films for anti-counterfeiting applications

Science.gov (United States)

Chen, L.; Lai, C.; Marchewka, R.; Berry, R. M.; Tam, K. C.

2016-07-01

Structural colors and photoluminescence have been widely used for anti-counterfeiting and security applications. We report for the first time the use of CdS quantum dot (QD)-functionalized cellulose nanocrystals (CNCs) as building blocks to fabricate nanothin films via layer-by-layer (LBL) self-assembly for anti-counterfeiting applications. Both negatively- and positively-charged CNC/QD nanohybrids with a high colloidal stability and a narrow particle size distribution were prepared. The controllable LBL coating process was characterized by scanning electron microscopy and ellipsometry. The rigid structure of CNCs leads to nanoporous structured films on poly(ethylene terephthalate) (PET) substrates with high transmittance (above 70%) over the entire range of visible light and also resulted in increased hydrophilicity (contact angles of ~40 degrees). Nanothin films on PET substrates showed good flexibility and enhanced stability in both water and ethanol. The modified PET films with structural colors from thin-film interference and photoluminescence from QDs can be used in anti-counterfeiting applications.Structural colors and photoluminescence have been widely used for anti-counterfeiting and security applications. We report for the first time the use of CdS quantum dot (QD)-functionalized cellulose nanocrystals (CNCs) as building blocks to fabricate nanothin films via layer-by-layer (LBL) self-assembly for anti-counterfeiting applications. Both negatively- and positively-charged CNC/QD nanohybrids with a high colloidal stability and a narrow particle size distribution were prepared. The controllable LBL coating process was characterized by scanning electron microscopy and ellipsometry. The rigid structure of CNCs leads to nanoporous structured films on poly(ethylene terephthalate) (PET) substrates with high transmittance (above 70%) over the entire range of visible light and also resulted in increased hydrophilicity (contact angles of ~40 degrees). Nanothin films

Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging.

Science.gov (United States)

Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

2015-05-07

Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.

Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

International Nuclear Information System (INIS)

Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G.

1995-01-01

Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author)

Second-harmonic imaging of semiconductor quantum dots

DEFF Research Database (Denmark)

Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld

2000-01-01

Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...

Quantum Accelerators for High-performance Computing Systems

Energy Technology Data Exchange (ETDEWEB)

Humble, Travis S. [ORNL; Britt, Keith A. [ORNL; Mohiyaddin, Fahd A. [ORNL

2017-11-01

We define some of the programming and system-level challenges facing the application of quantum processing to high-performance computing. Alongside barriers to physical integration, prominent differences in the execution of quantum and conventional programs challenges the intersection of these computational models. Following a brief overview of the state of the art, we discuss recent advances in programming and execution models for hybrid quantum-classical computing. We discuss a novel quantum-accelerator framework that uses specialized kernels to offload select workloads while integrating with existing computing infrastructure. We elaborate on the role of the host operating system to manage these unique accelerator resources, the prospects for deploying quantum modules, and the requirements placed on the language hierarchy connecting these different system components. We draw on recent advances in the modeling and simulation of quantum computing systems with the development of architectures for hybrid high-performance computing systems and the realization of software stacks for controlling quantum devices. Finally, we present simulation results that describe the expected system-level behavior of high-performance computing systems composed from compute nodes with quantum processing units. We describe performance for these hybrid systems in terms of time-to-solution, accuracy, and energy consumption, and we use simple application examples to estimate the performance advantage of quantum acceleration.

Graphene Oxide Quantum Dots Exfoliated From Carbon Fibers by Microwave Irradiation: Two Photoluminescence Centers and Self-Assembly Behavior.

Science.gov (United States)

Yuan, Jian-Min; Zhao, Rui; Wu, Zhen-Jun; Li, Wei; Yang, Xin-Guo

2018-04-17

Graphene oxide quantum dots (GOQDs) attract great attention for their unique properties and promising application potential. The difficulty in the formation of a confined structure, and the numerous and diverse oxygen-containing functional groups results in a low emission yield to GOQDs. Here, GOQDs with a size of about 5 nm, exfoliated from carbon fibers by microwave irradiation, are detected and analyzed. The exfoliated GOQDs are deeply oxidized and induce large numbers of epoxy groups and ether bonds, but only a small amount of carbonyl groups and hydroxyl groups. The subdomains of sp 2 clusters, involving epoxy groups and ether bonds, are responsible for the two strong photoluminescence emissions of GOQDs under different excitation wavelengths. Moreover, GOQDs tend to self-assemble at the edges of their planes to form self-assembly films (SAFs) with the evaporation of water. SAFs can further assemble into different 3D patterns with unique microstructures such as sponge bulk, sponge ball, microsheet, sisal, and schistose coral, which are what applications such as supercapacitors, cells, catalysts, and electrochemical sensors need. This method for preparation of GOQDs is easy, quick, and environmentally friendly, and this work may open up new research interests about GOQDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Theory of Spin States of Quantum Dot Molecules

Science.gov (United States)

Ponomarev, I. V.; Reinecke, T. L.; Scheibner, M.; Stinaff, E. A.; Bracker, A. S.; Doty, M. F.; Gammon, D.; Korenev, V. L.

2007-04-01

The photoluminescence spectrum of an asymmetric pair of coupled InAs quantum dots in an applied electric field shows a rich pattern of level anticrossings, crossings and fine structure that can be understood as a superposition of charge and spin configurations. We present a theoretical model that provides a description of the energy positions and intensities of the optical transitions in exciton, biexciton and charged exciton states of coupled quantum dots molecules.

Investigation of the photoluminescence properties of thermochemically synthesized CdS nanocrystals

Directory of Open Access Journals (Sweden)

M. Molaei

2011-03-01

Full Text Available In this work we have synthesized CdS nanocrystals with thermochemical method. CdSO4 and Na2S2O3 were used as the precursors and thioglycolic acid (TGA was used as capping agent molecule. The structure and optical property of the nanocrystals were characterized by means of XRD, TEM, UV-visible optical spectroscopy and photoluminescence (PL. X-ray diffraction (XRD and TEM analyses demonstrated hexagonal phase CdS nanocrystals with an average size around 2 nm. Synthesized nanocrystals exhibited band gap of about 3.2 eV and showed a broad band emission from 400-750 nm centered at 504 nm with a (0.27, 0.39 CIE coordinate. This emission can be attributed to recombination of an electron in conduction band with a hole trapped in Cd vacancies near to the valance band of CdS. The best attained photoluminescence quantum yield of the nanocrystals was about 12%, this amount is about 20 times higher than that for thioglycerol (TG capped CdS nanocrystals.

Binding Quantum Dots to Silk Biomaterials for Optical Sensing

Directory of Open Access Journals (Sweden)

Disi Lu

2015-01-01

Full Text Available Quantum dots (QDs, have great potential for fabricating optical sensing devices and imaging biomaterial degradation in vivo. In the present study, 2-mercaptoethylamine- (MEA- and mercaptopropionic acid- (MPA- capped CdTe-QDs were physically incorporated in silk films that contained a high content (>30% of crystalline beta-sheet structure. The beta-sheets were induced by the addition of glycerol, water annealing, glycerol/annealing, or treatment with methanol. Incorporation of QDs did not influence the formation of beta-sheets. When the films were extracted with water, most QDs remained associated with the silk, based on the retention of photoluminescence in the silk films and negligible photoluminescence in the extracts. Compared to the solution state, photoluminescence intensity significantly decreased for MEA-QDs but not for MPA-QDs in the silk films, while the emission maximum blue shifted (≈4 nm slightly for both. Further film digestion using protease XIV, alpha-chymotrypsin, and the combination of the two proteases suggested that QDs may be bound to the silk beta-sheet regions but not the amorphous regions. QDs photoluminescence in silk films was quenched when the concentration of hydrogen peroxide (H2O2 was above 0.2-0.3 mM, indicating the QDs-incorporated silk films can be used to report oxidation potential in solution.

Controllable synthesis of dual emissive Ag:InP/ZnS quantum dots with high fluorescence quantum yield

Science.gov (United States)

Yang, Wu; He, Guoxing; Mei, Shiliang; Zhu, Jiatao; Zhang, Wanlu; Chen, Qiuhang; Zhang, Guilin; Guo, Ruiqian

2017-11-01

Dual emissive Cd-free quantum dots (QDs) are in great demand for various applications. However, their synthesis has been faced with challenges. Here, we demonstrate the dual emissive Ag:InP/ZnS core/shell QDs with the excellent photoluminescence quantum yield (PL QY) up to 75% and their PL dependence on the reaction temperature, reaction time, the different ZnX2 (X = I, Cl, and Br) precursors, the ratio of In/Zn and the Ag dopant concentration. The as-prepared Ag:InP/ZnS QDs exhibit dual emission with one peak position of about 492 nm owing to the intrinsic emission, and the other peak position of about 575 nm resulting from Ag-doped emission. These dual emissive QDs are integrated with the commercial GaN-based blue LEDs, and the simulation results show that the Ag:InP/ZnS QDs-based white LEDs could realize bright natural white-lights with the luminous efficacy (LE) of 94.2-98.4 lm/W, the color rendering index (CRI) of 82-83 and the color quality scale (CQS) of 82-83 at different correlated color temperatures (CCT). This unique combination of the above properties makes this new class of dual emissive QDs attractive for white LED applications.

Investigation of self-organized quantum dots in InGaN alloys for photovoltaic devices

Energy Technology Data Exchange (ETDEWEB)

Yuan, Jinshe; Wang, Mingyue [Chongqing Normal Univ. (China). Dept. of Physics

2008-07-01

The self-organized quantum dots in InGaN alloys grown by metal organic chemical vapor deposition for photovoltaic devices were investigated using photoluminescence spectra, x-ray diffraction and atomic force microscopy measurements. The AFM view of the alloy shows the island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. By analysis of the PL, it has been found that the narrow 493nm emission peak with 490nm and 487nm shoulder peaks was originated from InGaN self-organized quantum dots, which provide a candidate for realizing high efficiencies photovoltaic devices. (orig.)

Quantum Dots and Their Multimodal Applications: A Review

Directory of Open Access Journals (Sweden)

Paul H. Holloway

2010-03-01

Full Text Available Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence or electric field (electroluminescence. In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

Electrochemical tuning of optical properties of graphitic quantum dots

International Nuclear Information System (INIS)

Ge, Juan; Li, Yan; Zhang, Bo-Ping; Ma, Ning; Wang, Jun; Pu, Chang; Xiang, Ying-Chang

2015-01-01

Graphitic quantum dots (GQDs), as a new class of quantum dots, possess unique properties. Among the various reported approaches for their fabrication, electrochemical method possesses numerous advantages compared with others. In particular, the formation process of the GQDs could be precisely controlled by this method through adjusting the electrochemical parameters and environment. In this study, GQDs with multi-color fluorescence (FL) were obtained by this method through tuning only the applied potential window of cycling voltammetry. The luminescence mechanism of those GQDs was discussed and explained by the ultraviolet (UV)–visible, photoluminescence (PL), and photoluminescence excitation (PLE) spectra. The influence of the applied potential window on the PL properties of GQDs and the relationship between the degree of surface oxidation and PL properties were also investigated. - Highlights: • We produced the graphite quantum dots (GQDs) by an electrochemical method. • We changed the applied potentials of cycling voltammetry (CV). • Varying of applied potentials changed surface oxygen-containing groups of GQDs. • Higher surface oxidation degree resulted in the red-shift of PL spectra

Novel and high-performance asymmetric micro-supercapacitors based on graphene quantum dots and polyaniline nanofibers

Science.gov (United States)

Liu, Wenwen; Yan, Xingbin; Chen, Jiangtao; Feng, Yaqiang; Xue, Qunji

2013-06-01

In comparison with graphene sheets, graphene quantum dots (GQDs) exhibit novel chemical/physical properties including nanometer-size, abundant edge defects, good electrical conductivity, high mobility, chemical inertia, stable photoluminescence and better surface grafting, making them promising for fabricating various novel devices. In the present work, an asymmetric micro-supercapacitor, using GQDs as negative active material and polyaniline (PANI) nanofibers as positive active material, is built for the first time by a simple and controllable two-step electro-deposition on interdigital finger gold electrodes. Electrochemical measurements reveal that the as-made GQDs//PANI asymmetric micro-supercapacitor has a more excellent rate capability (up to 1000 V s-1) than previously reported electrode materials, as well as faster power response capability (with a very short relaxation time constant of 115.9 μs) and better cycling stability after 1500 cycles in aqueous electrolyte. On this basis, an all-solid-state GQDs//PANI asymmetric micro-supercapacitor is fabricated using H3PO4-polyvinyl alcohol gel as electrolyte, which also exhibits desirable electrochemical capacitive performances. These encouraging results presented here may open up new insight into GQDs with highly promising applications in high-performance energy-storage devices, and further expand the potential applications of GQDs beyond the energy-oriented application of GQDs discussed above.In comparison with graphene sheets, graphene quantum dots (GQDs) exhibit novel chemical/physical properties including nanometer-size, abundant edge defects, good electrical conductivity, high mobility, chemical inertia, stable photoluminescence and better surface grafting, making them promising for fabricating various novel devices. In the present work, an asymmetric micro-supercapacitor, using GQDs as negative active material and polyaniline (PANI) nanofibers as positive active material, is built for the first time by a

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

International Nuclear Information System (INIS)

Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

2010-01-01

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

2010-02-15

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures

International Nuclear Information System (INIS)

Mazur, Yu I; Dorogan, V G; Benamara, M; Ware, M E; Salamo, G J; Schmidbauer, M; Tarasov, G G; Johnson, S R; Lu, X; Yu, S-Q; Tiedje, T

2013-01-01

The structural and optical properties of a set of high-quality GaAs 1-x Bi x /GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.

Templated self-assembly of SiGe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Dais, Christian

2009-08-19

This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2016-01-01

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

Comparison of in situ ionizing radiation effects on Raman and photoluminescence intensity of high OH, low OH silica, and fluoride core fibers

Science.gov (United States)

Bilodeau, T. G.; Ewing, K. J.; Nau, G. M.; Aggarwal, I. D.

1995-06-01

An in situ study of the effects of ionizing radiation on the strength of the Raman and photoluminescence signal of high OH, low OH, and fluoride core fibers has been performed with 514.5 nm laser excitation. The fibers were irradiated with a 60Co source at a constant dose rate of 560 rads/h. The high OH fiber displayed a much slower decay of the fiber Raman intensity than the other two fibers during irradiation. The fluoride fiber exhibited the quickest decline in Raman signal with the intensity dropping by a factor of 1000 in less than 20 min. The Raman intensity of the low OH silica fiber recovered to greater than 90% of its pre-irradiation value after a post-irradiation photoanneal with 488 nm laser light. The silica fibers displayed an increase in intensity of a broad photoluminescence feature centered at 650 nm. However the fiber photoluminescence intensity remained much weaker than the Raman intensity throughout the irradiations.

Optics of colloidal quantum-confined CdSe nanoscrolls

Energy Technology Data Exchange (ETDEWEB)

Vasiliev, R B; Sokolikova, M S [M. V. Lomonosov Moscow State University, Moscow (Russian Federation); Vitukhnovskii, A G; Ambrozevich, S A; Selyukov, A S; Lebedev, V S [P N Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

2015-09-30

Nanostructures in the form of 1.2-nm-thick colloidal CdSe nanoplatelets rolled into scrolls are investigated. The morphology of these scrolls is analysed and their basic geometric parameters are determined (diameter 29 nm, longitudinal size 100 – 150 nm) by TEM microscopy. Absorption and photoluminescence spectra of these objects are recorded, and the luminescence decay kinetics is studied. It is shown that the optical properties of CdSe nanoscrolls differ significantly from the properties of CdSe quantum dots and that these nanoscrolls are attractive for nanophotonic devices due to large oscillator strengths of the transition, small widths of excitonic peaks and short luminescence decay times. Nanoscrolls can be used to design hybrid organic–inorganic pure-color LEDs with a high luminescence quantum yield and low operating voltages. (optics and technology of nanostructures)

Highly sensitive detection of ionizing radiations by a photoluminescent uranyl organic framework

Energy Technology Data Exchange (ETDEWEB)

Xie, Jian; Wang, Yaxing; Liu, Wei; Yin, Xuemiao; Chen, Lanhua; Diwu, Juan; Chai, Zhifang; Wang, Shuao [School for Radiological and interdisciplinary Sciences (RAD-X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, Soochow University, Suzhou (China); Zou, Youming [High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui (China); Albrecht-Schmitt, Thomas E. [Department of Chemistry and Biochemistry, Florida State University, Tallahassee, FL (United States); Liu, Guokui [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL (United States)

2017-06-19

Precise detection of low-dose X- and γ-radiations remains a challenge and is particularly important for studying biological effects under low-dose ionizing radiation, safety control in medical radiation treatment, survey of environmental radiation background, and monitoring cosmic radiations. We report here a photoluminescent uranium organic framework, whose photoluminescence intensity can be accurately correlated with the exposure dose of X- or γ-radiations. This allows for precise and instant detection of ionizing radiations down to the level of 10{sup -4} Gy, representing a significant improvement on the detection limit of approximately two orders of magnitude, compared to other chemical dosimeters reported up to now. The electron paramagnetic resonance analysis suggests that with the exposure to radiations, the carbonyl double bonds break affording oxo-radicals that can be stabilized within the conjugated uranium oxalate-carboxylate sheet. This gives rise to a substantially enhanced equatorial bonding of the uranyl(VI) ions as elucidated by the single-crystal structure of the γ-ray irradiated material, and subsequently leads to a very effective photoluminescence quenching through phonon-assisted relaxation. The quenched sample can be easily recovered by heating, enabling recycled detection for multiple runs. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fabrication and spectroscopic studies on highly luminescent CdSe/CdS nanorod polymer composites

NARCIS (Netherlands)

Bomm, J.; Büchtemann, A.; Fiore, Angela; Manna, L.; Nelson, J.H.; Hill, D.; van Sark, W.G.J.H.M.

2010-01-01

Highly luminescent nanocomposites were prepared by incorporating CdSe/CdS core/shell nanorods into different polymer matrices. The resulting nanocomposites show high transparency of up to 93%. A photoluminescence quantum efficiency of 70% was obtained, with an optimum combination of nanorod (0.05 wt

Preparation of carbon quantum dots based high photostability luminescent membranes.

Science.gov (United States)

Zhao, Jinxing; Liu, Cui; Li, Yunchuan; Liang, Jiyuan; Liu, Jiyan; Qian, Tonghui; Ding, Jianjun; Cao, Yuan-Cheng

2017-06-01

Urethane acrylate (UA) was used to prepare carbon quantum dots (C-dots) luminescent membranes and the resultants were examined with FT-IR, mechanical strength, scanning electron microscope (SEM) and quantum yields (QYs). FT-IR results showed the polyurethane acrylate (PUA) prepolymer -C = C-vibration at 1101 cm -1 disappeared but there was strong vibration at1687cm -1 which was contributed from the-C = O groups in cross-linking PUA. Mechanical strength results showed that the different quantity of C-dots loadings and UV-curing time affect the strength. SEM observations on the cross-sections of the membranes are uniform and have no structural defects, which prove that the C-dots are compatible with the water-soluble PUA resin. The C-dot loading was increased from 0 to 1 g, the maximum tensile stress was nearly 2.67 MPa, but the tensile strain was decreased from 23.4% to 15.1% and 7.2% respectively. QYs results showed that the C-dots in the membrane were stable after 120 h continuous irradiation. Therefore, the C-dots photoluminescent film is the promising material for the flexible devices in the future applications. Copyright © 2016 John Wiley & Sons, Ltd.

Quantum entanglement of high angular momenta.

Science.gov (United States)

Fickler, Robert; Lapkiewicz, Radek; Plick, William N; Krenn, Mario; Schaeff, Christoph; Ramelow, Sven; Zeilinger, Anton

2012-11-02

Single photons with helical phase structures may carry a quantized amount of orbital angular momentum (OAM), and their entanglement is important for quantum information science and fundamental tests of quantum theory. Because there is no theoretical upper limit on how many quanta of OAM a single photon can carry, it is possible to create entanglement between two particles with an arbitrarily high difference in quantum number. By transferring polarization entanglement to OAM with an interferometric scheme, we generate and verify entanglement between two photons differing by 600 in quantum number. The only restrictive factors toward higher numbers are current technical limitations. We also experimentally demonstrate that the entanglement of very high OAM can improve the sensitivity of angular resolution in remote sensing.

Ligand-Free Nanocrystals of Highly Emissive Cs4PbBr6 Perovskite

KAUST Repository

Zhang, Yuhai; Sinatra, Lutfan; Alarousu, Erkki; Yin, Jun; El-Zohry, Ahmed M.; Bakr, Osman; Mohammed, Omar F.

2018-01-01

diode or solar cell. Here, we report a new approach to preparing ligand-free perovskite NCs of CsPbBr, which retained high photoluminescence quantum yield (44%). Such an approach involves a polar solvent (acetonitrile) and two small molecules (ammonium

Synthesis and Characterization of Mercaptoacetic Acid Capped Cadmium Sulphide Quantum Dots.

Science.gov (United States)

Wageh, S; Maize, Mai; Donia, A M; Al-Ghamdi, Ahmed A; Umar, Ahmad

2015-12-01

This paper reports the facile synthesis and detailed characterization of mercaptoacetic acid capped cadmium sulphide (CdS) quantum dots using various cadmium precursors. The mercaptoacetic acid capped CdS quantum dots were prepared by facile and simple wet chemical method and characterized by several techniques such as energy dispersive spectroscopy (EDS), X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, UV-vis. spectroscopy, photoluminescence spectroscopy, high-resolution transmission microscopy (HRTEM) and thremogravimetric analysis. The EDS studies revealed that the prepared quantum dots possess higher atomic percentage of sulfur compared to cadmium due to the coordination of thiolate to the quantum dots surfaces. The X-ray and absorption analyses exhibited that the size of quantum dots prepared by cadmium acetate is larger than the quantum dots prepared by cadmium chloride and cadmium nitrate. The increase in size can be attributed to the low stability constant of cadmium acetate in comparison with cadmium chloride and cadmium nitrate. The FTIR and thermogravimetric analysis showed that the nature of capping molecule on the surface of quantum dots are different depending on the cadmium precursors which affect the emission from CdS quantum dots. Photoemission spectroscopy revealed that the emission of quantum dots prepared by cadmium acetate has high intensity band edge emission along with low intensity trapping state emission. However the CdS quantum dots prepared by cadmium chloride and cadmium nitrate produced only trapping state emissions.

Photoluminescence and radiation response properties of Ce3+-doped CsCaCl3 crystalline scintillator

International Nuclear Information System (INIS)

Fujimoto, Yutaka; Saeki, Keiichiro; Tanaka, Hironori; Yahaba, Takuma; Koshimizu, Masanori; Asai, Keisuke; Yanagida, Takayuki

2016-01-01

In this paper, we report on the photoluminescence and scintillation properties of a newly developed CsCaCl 3 :Ce (0.5 mol%) crystalline scintillator grown by the vertical Bridgman method. The fluorescence quantum efficiency for the Ce 3+ characteristic emission bands centered at around 350–400 nm was 76% under excitation at 330 nm light. The photoluminescence decay time of the Ce 3+ was approximately 32 ns. When x-ray excited the crystal, intense emission bands were observed at 350–400 nm, and could be attributed to the Ce 3+ emission. The scintillation light yield of the developed crystal was ∼7600 ph MeV −1 compared to a NaI:Tl commercial scintillator, and the principal scintillation decay time was approximately 340 ns plus two fast components of around 1.6 ns and 45 ns. (paper)

Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates

International Nuclear Information System (INIS)

Béaur, L.; Bretagnon, T.; Guillet, T.; Brimont, C.; Gallart, M.; Gil, B.; Gilliot, P.; Morhain, C.

2013-01-01

We report on absorption phenomena in ZnO/(Zn, Mg)O quantum wells grown along the c-axis by molecular beam epitaxy. The optical properties of such quantum wells are affected by a huge internal electric field. For wide quantum wells the absorption is driven by Quantum Confined Stark Effect. Phonon-assisted formation of excitons is observed in the case of thin quantum wells. The physical origin of these hot excitons is determined by using both low temperature (T=10 K) photoluminescence excitation spectroscopy and reflectivity measurements. -- Highlights: ► High structural quality ZnO/(Zn, Mg)O quantum wells are growth along the polar c-direction. ► Indirect phonon-assisted formation of excitons in the thin single quantum wells. ► Strong internal electric field present in polar heterostructures prevents the observation of hot excitons

Green biosynthesis of biocompatible CdSe quantum dots in living Escherichia coli cells

International Nuclear Information System (INIS)

Yan, Zhengyu; Qian, Jing; Su, Yilong; Ai, Xiaoxia; Wu, Shengmei; Gu, Yueqing

2014-01-01

A green and efficient biosynthesis method to prepare fluorescence-tunable biocompatible cadmium selenide quantum dots using Escherichia coli cells as biological matrix was proposed. Decisive factors in biosynthesis of cadmium selenide quantum dots in a designed route in Escherichia coli cells were elaborately investigated, including the influence of the biological matrix growth stage, the working concentration of inorganic reactants, and the co-incubation duration of inorganic metals to biomatrix. Ultraviolet-visible, photoluminescence, and inverted fluorescence microscope analysis confirmed the unique optical properties of the biosynthesized cadmium selenide quantum dots. The size distribution of the nanocrystals extracted from cells and the location of nanocrystals foci in vivo were also detected seriously by transmission electron microscopy. A surface protein capping layer outside the nanocrystals was confirmed by Fourier transform infrared spectroscopy measurements, which were supposed to contribute to reducing cytotoxicity and maintain a high viability of cells when incubating with quantum dots at concentrations as high as 2 μM. Cell morphology observation indicated an effective labeling of living cells by the biosynthesized quantum dots after a 48 h co-incubation. The present work demonstrated an economical and environmentally friendly approach to fabricating highly fluorescent quantum dots which were expected to be an excellent fluorescent dye for broad bio-imaging and labeling. (papers)

Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

Energy Technology Data Exchange (ETDEWEB)

Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalisches Institut der Uniwersitaet Wuerzburg, Wuerzburg (Germany)

1995-12-31

Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author). 5 refs, 3 figs, 1 tab.

Theoretical and experimental study of disordered Ba0.45Sr0.55 TiO3 photoluminescence at room temperature

International Nuclear Information System (INIS)

Souza, I.A.; Gurgel, M.F.C.; Santos, L.P.S.; Goes, M.S.; Cava, S.; Cilense, M.; Rosa, I.L.V.; Paiva-Santos, C.O.; Longo, E.

2006-01-01

Disordered and crystalline Ba 0.45 Sr 0.55 TiO 3 (BST) powder processed at low temperature was synthesized by the polymeric precursor method. The single-phase perovskite structure of the ceramics was identified by the Raman and X-ray diffraction techniques. Photoluminescence at room temperature was observed only in a disordered BST sample. Increasing the calcination time intensified the photoluminescence (PL), which reached its maximum value in the sample heat treated at 300 deg. C for 30 h. This emission may be correlated with the structural disorder. Periodic ab initio quantum-mechanical calculations using the CRYSTAL98 program can yield important information regarding the electronic and structural properties of crystalline and disordered solids. The experimental and theoretical results indicate the presence of intermediary energy levels in the band gap. This is ascribed to the break in symmetry, which is responsible for visible photoluminescence in the material's disordered state at room temperature

Proposed Quenching of Phonon-Induced Processes in Photoexcited Quantum Dots due to Electron-Hole Asymmetries

DEFF Research Database (Denmark)

Nysteen, Anders; Nielsen, Per Kær; Mørk, Jesper

2013-01-01

by photoluminescence excitation spectroscopy of a single quantum dot. We also investigate the implications for cavity QED, i.e., a coupled quantum dot-cavity system, and demonstrate that the phonon scattering may be strongly quenched. The quenching is explained by a balancing between the deformation potential...

Plasmon-Enhanced Photoluminescence of an Amorphous Silicon Quantum Dot Light-Emitting Device by Localized Surface Plasmon Polaritons in Ag/SiOx:a-Si QDs/Ag Sandwich Nanostructures

Directory of Open Access Journals (Sweden)

Tsung-Han Tsai

2015-01-01

Full Text Available We investigated experimentally the plasmon-enhanced photoluminescence of the amorphous silicon quantum dots (a-Si QDs light-emitting devices (LEDs with the Ag/SiOx:a-Si QDs/Ag sandwich nanostructures, through the coupling between the a-Si QDs and localized surface plasmons polaritons (LSPPs mode, by tuning a one-dimensional (1D Ag grating on the top. The coupling of surface plasmons at the top and bottom Ag/SiOx:a-Si QDs interfaces resulted in the localized surface plasmon polaritons (LSPPs confined underneath the Ag lines, which exhibit the Fabry-Pérot resonance. From the Raman spectrum, it proves the existence of a-Si QDs embedded in Si-rich SiOx film (SiOx:a-Si QDs at a low annealing temperature (300°C to prevent the possible diffusion of Ag atoms from Ag film. The photoluminescence (PL spectra of a-Si QDs can be precisely tuned by a 1D Ag grating with different pitches and Ag line widths were investigated. An optimized Ag grating structure, with 500 nm pitch and 125 nm Ag line width, was found to achieve up to 4.8-fold PL enhancement at 526 nm and 2.46-fold PL integrated intensity compared to the a-Si QDs LEDs without Ag grating structure, due to the strong a-Si QDs-LSPPs coupling.

The role of structural order-disorder for visible intense photoluminescence in the BaZr0.5Ti0.5O3 thin films

International Nuclear Information System (INIS)

Anicete-Santos, M.; Cavalcante, L.S.; Orhan, E.; Paris, E.C.; Simoes, L.G.P.; Joya, M.R.; Rosa, I.L.V.; Lucena, P.R. de; Santos, M.R.M.C.; Santos-Junior, L.S.; Pizani, P.S.; Leite, E.R.; Varela, J.A.; Longo, E.

2005-01-01

The nature of the intense visible room temperature photoluminescence of BaZr 0.5 Ti 0.5 O 3 non-crystalline thin films is discussed in the light of experimental results and theoretical calculations. The photoluminescence measurements reveal that the emission intensity changes with the degree of disorder in the BaZr 0.5 Ti 0.5 O 3 lattice. First principles quantum mechanical techniques, based on density functional theory at B3LYP level, have been employed to study the electronic structure of a crystalline model and of structurally disordered models in order to detect the influence of disorder on the electronic structure. An analysis of the electronic charge distribution reveals local polarization in the disordered structures. The relevance of the present theoretical and experimental results on the photoluminescence behavior of BZT is discussed

Combination of a Sample Pretreatment Microfluidic Device with a Photoluminescent Graphene Oxide Quantum Dot Sensor for Trace Lead Detection.

Science.gov (United States)

Park, Minsu; Ha, Hyun Dong; Kim, Yong Tae; Jung, Jae Hwan; Kim, Shin-Hyun; Kim, Do Hyun; Seo, Tae Seok

2015-11-03

A novel trace lead ion (Pb(2+)) detection platform by combining a microfluidic sample pretreatment device with a DNA aptamer linked photoluminescent graphene oxide quantum dot (GOQD) sensor was proposed. The multilayered microdevice included a microchamber which was packed with cation exchange resins for preconcentrating metal ions. The sample loading and recovery were automatically actuated by a peristaltic polydimethylsiloxane micropump with a flow rate of 84 μL/min. Effects of the micropump actuation time, metal ion concentration, pH, and the volumes of the sample and eluent on the metal ion capture and preconcentration efficiency were investigated on a chip. The Pb(2+) samples whose concentrations ranged from 0.48 nM to 1.2 μM were successfully recovered with a preconcentration factor value between 4 and 5. Then, the preconcentrated metal ions were quantitatively analyzed with a DNA aptamer modified GOQD. The DNA aptamer on the GOQD specifically captured the target Pb(2+) which can induce electron transfer from GOQD to Pb(2+) upon UV irradiation, thereby resulting in the fluorescence quenching of the GOQD. The disturbing effect of foreign anions on the Pb(2+) detection and the spiked Pb(2+) real samples were also analyzed. The proposed GOQD metal ion sensor exhibited highly sensitive Pb(2+) detection with a detection limit of 0.64 nM and a dynamic range from 1 to 1000 nM. The on-chip preconcentration of the trace metal ions from a large-volume sample followed by the metal ion detection by the fluorescent GOQD sensor can provide an advanced platform for on-site water pollution screening.

Micro-Raman and micro-photoluminescence study of bio-conjugated core–shell CdSe/ZnS nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics of NASU, pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Kolomys, O.; Strelchuk, V. [V. Lashkaryov Institute of Semiconductor Physics of NASU, pr. Nauky 41, 03028 Kyiv (Ukraine); Rachkov, O. [The Institute of Molecular Biology and Genetics of NASU, Zabolotnogo Str. 150, 03680 Kyiv (Ukraine); Kryvko, A. [Instituto Politécnico Nacional – ESIME, Av. IPN, Ed. Z4, U.P.A.L.M., 07738 Mexico D.F. (Mexico)

2014-11-15

The micro-Raman and micro-photoluminescence spectra of non-conjugated and conjugated with antibody against S6K2 commercial CdSe/ZnS quantum dots (QDs) were investigated under different excitation wavelengths and at different temperatures. In the photoluminescence (PL) spectra, the additional PL band shifted on 0.6–0.65 eV to higher energies from the CdSe/ZnS QD exciton PL band is revealed. The relative intensity of this band is found to be several times larger in bio-conjugated QDs, than in the non-conjugated ones. The characteristics of both PL bands (the PL intensity, spectral position and half-width of the PL band) vary similarly under continuous laser light irradiation, storage of the QD samples in the atmospheric ambience as well as during the temperature change. In the Raman spectra recorded under excitation resonant with the high-energy PL band, the additional Raman peaks at about 300 cm{sup −1} and 600 cm{sup −1}, which are close to the frequency of LO and 2LO phonons of bulk CdS, are found. It is proposed that alloyed QDs with chemical composition close to CdS are responsible for the additional high-energy PL band. The possible reasons for the formation of the alloyed QDs are discussed.

Time-resolved photoluminescence of SiOx encapsulated Si

Science.gov (United States)

Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

Erbium-implanted silica colloids with 80% luminescence quantum efficiency

Science.gov (United States)

Slooff, L. H.; de Dood, M. J. A.; van Blaaderen, A.; Polman, A.

2000-06-01

Silica colloids with a diameter of 240-360 nm, grown by wet chemical synthesis using ethanol, ammonia, water, and tetraethoxysilane, were implanted with 350 keV Er ions, to peak concentrations of 0.2-1.1 at. % and put onto a silicon or glass substrate. After annealing at 700-900 °C the colloids show clear room-temperature photoluminescence at 1.53 μm, with lifetimes as high as 17 ms. By comparing data of different Er concentrations, the purely radiative lifetime is estimated to be 20-22 ms, indicating a high quantum efficiency of about 80%. This high quantum efficiency indicates that, after annealing, the silica colloids are almost free of OH impurities. Spinning a layer of polymethylmethacrylate over the silica spheres results in an optically transparent nanocomposite layer, that can be used as a planar optical waveguide amplifier at 1.5 μm that is fully compatible with polymer technology.

Modification of g-C{sub 3}N{sub 4} nanosheets by carbon quantum dots for highly efficient photocatalytic generation of hydrogen

Energy Technology Data Exchange (ETDEWEB)

Li, Kui; Su, Feng-Yun; Zhang, Wei-De, E-mail: zhangwd@scut.edu.cn

2016-07-01

Graphical abstract: Carbon quantum dots-modified graphitic carbon nitride nanosheets (CNNS/CQDs) catalysts with high and stable activity for photocatalytic generation of hydrogen through water splitting were successfully constructed. - Highlights: • Composite photocatalysts based on g-C{sub 3}N{sub 4} nanosheets and CQDs were prepared. • High visible light photocatalytic activity for H{sub 2} evolution. • Effective separation and transfer of charge carriers. - Abstract: Carbon quantum dots (CQDs) were deposited onto graphite-like carbon nitride nanosheets (CNNS) to form CNNS/CQDs composites. The prepared CNNS/CQDs composites exhibit much higher photocatalytic activity under visible light irradiation than pure CNNS do. The CNNS/CQDs-7 sample displays the highest photocatalytic performance, with H{sub 2} production rate of 116.1 μmol h{sup −1}, which is three times of that over pure CNNS (37.8 μmol h{sup −1}). Photoluminescence spectroscopy and photoelectrochemical (PEC) analysis reveal that the CQDs are favorable for trapping electrons and promoting the separation of photogenerated electron-hole pairs in CNNS. A possible photocatalytic mechanism of the enhanced photocatalytic performance for H{sub 2} generation over CNNS/CQDs will be proposed in this paper.

Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin

Science.gov (United States)

2011-01-01

Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633

Directly deposited quantum dot solids using a colloidally stable nanoparticle ink

KAUST Repository

Fischer, Armin H.; Rollny, Lisa R.; Pan, Jun; Carey, Graham H.; Thon, Susanna; Hoogland, Sjoerd H.; Voznyy, Oleksandr; Zhitomirsky, David; Kim, Jinyoung; Bakr, Osman; Sargent, E. H.

2013-01-01

We develop a photovoltaic colloidal quantum dot ink that allows for lossless, single-step coating of large areas in a manufacturing-compatible process. Our materials strategy involves a solution-phase ligand exchange to transport compatible linkers that yield 1-thioglycerol-capped PbS quantum dots in dimethyl sulfoxide with a photoluminescence quantum yield of 24%. A proof-of-principle solar cell made from the ink exhibits 2.1% power conversion efficiency. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Directly deposited quantum dot solids using a colloidally stable nanoparticle ink

KAUST Repository

Fischer, Armin H.

2013-08-12

We develop a photovoltaic colloidal quantum dot ink that allows for lossless, single-step coating of large areas in a manufacturing-compatible process. Our materials strategy involves a solution-phase ligand exchange to transport compatible linkers that yield 1-thioglycerol-capped PbS quantum dots in dimethyl sulfoxide with a photoluminescence quantum yield of 24%. A proof-of-principle solar cell made from the ink exhibits 2.1% power conversion efficiency. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs

Science.gov (United States)

Rosales, Daniel; Gil, B.; Bretagnon, T.; Zhang, F.; Okur, S.; Monavarian, M.; Izioumskaia, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Leach, J. H.

2014-03-01

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on m-plane oriented substrate are studied in 8K-300K temperature range. The optical spectra reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature-dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations.

Spectroscopy of Charged Quantum Dot Molecules

Science.gov (United States)

Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.; Korenev, V. L.

2006-03-01

Spins of single charges in quantum dots are attractive for many quantum information and spintronic proposals. Scalable quantum information applications require the ability to entangle and operate on multiple spins in coupled quantum dots (CQDs). To further the understanding of these systems, we present detailed spectroscopic studies of InAs CQDs with control of the discrete electron or hole charging of the system. The optical spectrum reveals a pattern of energy anticrossings and crossings in the photoluminescence as a function of applied electric field. These features can be understood as a superposition of charge and spin configurations of the two dots and represent clear signatures of quantum mechanical coupling. The molecular resonance leading to these anticrossings is achieved at different electric fields for the optically excited (trion) states and the ground (hole) states allowing for the possibility of using the excited states for optically induced coupling of the qubits.

Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors.

Science.gov (United States)

Cho, Kyung-Sang; Heo, Keun; Baik, Chan-Wook; Choi, Jun Young; Jeong, Heejeong; Hwang, Sungwoo; Lee, Sang Yeol

2017-10-10

We report color-selective photodetection from intermediate, monolayered, quantum dots buried in between amorphous-oxide semiconductors. The proposed active channel in phototransistors is a hybrid configuration of oxide-quantum dot-oxide layers, where the gate-tunable electrical property of silicon-doped, indium-zinc-oxide layers is incorporated with the color-selective properties of quantum dots. A remarkably high detectivity (8.1 × 10 13 Jones) is obtained, along with three major findings: fast charge separation in monolayered quantum dots; efficient charge transport through high-mobility oxide layers (20 cm 2  V -1  s -1 ); and gate-tunable drain-current modulation. Particularly, the fast charge separation rate of 3.3 ns -1 measured with time-resolved photoluminescence is attributed to the intermediate quantum dots buried in oxide layers. These results facilitate the realization of efficient color-selective detection exhibiting a photoconductive gain of 10 7 , obtained using a room-temperature deposition of oxide layers and a solution process of quantum dots. This work offers promising opportunities in emerging applications for color detection with sensitivity, transparency, and flexibility.The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors and demonstrate color-detecting logic gates.

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Kageyama, Takeo; Miyamoto, Tomoyuki; Ohta, Masataka; Matsuura, Tetsuya; Matsui, Yasutaka; Furuhata, Tatsuya; Koyama, Fumio

2004-01-01

A surfactant effect of antimony (Sb) on highly strained GaInAs quantum wells (QWs) was studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL) was observed by adding the dilute Sb. The QWs showed an increased PL intensity and narrow linewidth of 23 meV for the wavelength range up to 1180 nm. An atomic force microscope study showed a flattened surface morphology by the introduction of the Sb. Broad-area lasers with a GaInAsSb/GaAs double-QW active layer emitting at 1170 nm showed a low threshold current density of 125 A/cm 2 per well for an infinite cavity length

Engineering two-photon high-dimensional states through quantum interference

Science.gov (United States)

Zhang, Yingwen; Roux, Filippus S.; Konrad, Thomas; Agnew, Megan; Leach, Jonathan; Forbes, Andrew

2016-01-01

Many protocols in quantum science, for example, linear optical quantum computing, require access to large-scale entangled quantum states. Such systems can be realized through many-particle qubits, but this approach often suffers from scalability problems. An alternative strategy is to consider a lesser number of particles that exist in high-dimensional states. The spatial modes of light are one such candidate that provides access to high-dimensional quantum states, and thus they increase the storage and processing potential of quantum information systems. We demonstrate the controlled engineering of two-photon high-dimensional states entangled in their orbital angular momentum through Hong-Ou-Mandel interference. We prepare a large range of high-dimensional entangled states and implement precise quantum state filtering. We characterize the full quantum state before and after the filter, and are thus able to determine that only the antisymmetric component of the initial state remains. This work paves the way for high-dimensional processing and communication of multiphoton quantum states, for example, in teleportation beyond qubits. PMID:26933685

High-throughput fabrication of anti-counterfeiting colloid-based photoluminescent microtags using electrical nanoimprint lithography

International Nuclear Information System (INIS)

Diaz, R; Palleau, E; Poirot, D; Sangeetha, N M; Ressier, L

2014-01-01

This work demonstrates the excellent capability of the recently developed electrical nanoimprint lithography (e-NIL) technique for quick, high-throughput production of well-defined colloid assemblies on surfaces. This is shown by fabricating micron-sized photoluminescent quick response (QR) codes based on the electrostatic directed trapping (so called nanoxerography process) of 28 nm colloidal lanthanide-doped upconverting NaYF 4 nanocrystals. Influencing experimental parameters have been optimized and the contribution of triboelectrification in e-NIL was evidenced. Under the chosen conditions, more than 300 000 nanocrystal-based QR codes were fabricated on a 4 inch silicon wafer, in less than 15 min. These microtags were then transferred to transparent flexible films, to be easily integrated onto desired products. Invisible to the naked eye, they can be decoded and authenticated using an optical microscopy image of their specific photoluminescence mapping. Beyond this very promising application for product tracking and the anti-counterfeiting strategies, e-NIL nanoxerography, potentially applicable to any types of charged and/or polarizable colloids and pattern geometries opens up tremendous opportunities for industrial scale production of various other kinds of colloid-based devices and sensors. (paper)

Effect of europium ion concentration on the structural and photoluminescence properties of novel Li2BaZrO4: Eu3+ nanocrystals

Science.gov (United States)

Ahemen, I.; Dejene, F. B.; Kroon, R. E.; Swart, H. C.

2017-12-01

This work reports the influence of Eu3+ ion concentration on the structure and photoluminescence properties of Li2BaZrO4 nanocrystals including its intrinsic quantum efficiency (IQE). Chemical bath method was employed in the synthesis procedure. X-ray diffraction results showed tetragonal phase for Eu3+ ion concentration in the range 1 and 7 mol% and cubic phase at 8 mol%. The presence of barium oxide (BaO) was confirmed from selected area electron diffraction (SAED). The excitation spectra for these phosphors consisted of broad charge transfer (CT) bands due to the combination of Zr4+ - O2- and Eu3+-O2- charge transfer states. Superimposed on the CT band were direct excitation levels of Eu3+ and Ba2+ ions, in the range 320-450 nm. At high Eu3+ ions concentrations, the intensities of CT bands decreased because some of the ions were coordinated with Ba2+ ions. Photoluminescence emissions for all the doped samples at room temperature appeared to be entirely from intraconfigurational Eu3+ emissions and depended both on the site symmetry as well as the ion concentration. The quadrupole-quadrupole multipolar process was found to be solely responsible for the luminescence quenching. The intensity parameters (Ω2 ,Ω4), asymmetry ratio, R0 and the average decay lifetime of the nanocrystals showed dependence on concentration. High internal quantum efficiency (IQE) values were obtained at low Eu3+ ion concentrations, but efficiency decreased with increasing ion concentration. The CIE coordinates values were comparable to existing red phosphors and in combination with the high IQE make this phosphor a good candidate for red light emitting applications.

Spontaneous emission of quantum dots in disordered photonic crystal waveguides

DEFF Research Database (Denmark)

Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

2010-01-01

We report on the enhancement of the spontaneous emission rate of single semiconductor quantum dots embedded in a photonic crystal waveguide with engineered disorder. Random high-Q cavities, that are signature of Anderson localization, are measured in photoluminescence experiments and appear...... in the slow light regime of the waveguide mode. Time resolved experiments show a 15-fold enhancement of the spontaneous emission rate, with coupling efficiencies of single photons into Anderson localized cavity modes of 94%. These results show that the performances of Anderson-localized cavities...

Four-wave mixing in InAlGaAs quantum dots

DEFF Research Database (Denmark)