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Sample records for high dielectric breakdown

  1. Experimental Study on High Electrical Breakdown of Water Dielectric

    International Nuclear Information System (INIS)

    Zhang Zicheng; Zhang Jiande; Yang Jianhua

    2005-01-01

    By means of a coaxial apparatus, pressurized water breakdown experiments with microsecond charging have been carried out with different surface roughness of electrodes and different ethylene glycol concentrations of ethylene glycol/water mixture. The experimental results about the breakdown stress and the effective time are presented. The breakdown stress is normalized to the situation that the effective time is transformed to 1 μs and analyzed. The conclusions are as follows: (1) the breakdown stress formula is modified to E = 0.561M A -1/10 t eff -1/N P 1/8 ; (2) the coefficient M is significantly increased by surface polishing and ethylene glycol additive; (3) it is accumulative for the capacity of improving electrical breakdown strength for surface polishing, ethylene glycol additive, and pressurization, of which pressurization is the most effective method; (4) the highest stress of 235.5 kV/cm is observed in ethylene glycol/water mixture with an ethylene glycol concentration of 80% at a hydrostatic pressure of 1215.9 kPa and is about one time greater than that in pure water at constant pressure; (5) for pressurization and surface polishing, the primary mechanism to improve the breakdown strength of water dielectric is the increase in the breakdown time delay. Research results indicate great potential in the application of the high power pulse conditioning system of water dielectric

  2. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    system, with respect to functionalization, is achieved. It is investigated how the different functionalization variables affect essential DE properties, including dielectric permittivity, dielectric loss, elastic modulus and dielectric breakdown strength, and the optimal degree of chemical......%) was obtained without compromising other vital DE properties such as elastic modulus, gel fraction, dielectric and viscous loss and electrical breakdown strength....

  3. Influence of Low Speed Rolling Movement on High Electrical Breakdown for Water Dielectric with Microsecond Charging

    International Nuclear Information System (INIS)

    Zhang Zicheng; Zhang Jiande; Yang Jianhua

    2006-01-01

    By means of a coaxial apparatus, high electrical breakdown experiments are carried out in the rest state and the low speed rolling state with microsecond charging and the experimental results are analyzed. The conclusions are: (1) the breakdown stress of water dielectric in the rolling state is in good agreement with that in Martin formula, and so is that in the rest state; (2) the breakdown stress of water dielectric in the rolling state is about 5% higher than that in the rest state; (3) the results simulated with ANSYS demonstrate that the breakdown stress of water dielectric decreases when the bubbles appear near the surface of electrodes; (4) the primary mechanism to increase the breakdown stress of water dielectric in the rolling state is that the bubbles are driven away and the number of bubbles near the surface of electrodes is decreased by rolling movement

  4. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric...

  5. On dielectric breakdown statistics

    International Nuclear Information System (INIS)

    Tuncer, Enis; James, D Randy; Sauers, Isidor; Ellis, Alvin R; Pace, Marshall O

    2006-01-01

    In this paper, we investigate the dielectric breakdown data of some insulating materials and focus on the applicability of the two- and three-parameter Weibull distributions. A new distribution function is also proposed. In order to assess the model distribution's trustworthiness, we employ the Monte Carlo technique and, randomly selecting data-subsets from the whole dielectric breakdown data, determine whether the selected probability functions accurately describe the breakdown data. The utility and strength of the proposed expression are illustrated distinctly by the numerical procedure. The proposed expression is shown to be a valuable alternative to the Weibull ones

  6. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  7. The Electrical Breakdown of Thin Dielectric Elastomers

    DEFF Research Database (Denmark)

    Zakaria, Shamsul Bin; Morshuis, Peter H. F.; Yahia, Benslimane Mohamed

    2014-01-01

    Dielectric elastomers are being developed for use in actuators, sensors and generators to be used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. In order to obtain maximum efficiency, the devices are operated at high electrical fields....... This increases the likelihood for electrical breakdown significantly. Hence, for many applications the performance of the dielectric elastomers is limited by this risk of failure, which is triggered by several factors. Amongst others thermal effects may strongly influence the electrical breakdown strength....... In this study, we model the electrothermal breakdown in thin PDMS based dielectric elastomers in order to evaluate the thermal mechanisms behind the electrical failures. The objective is to predict the operation range of PDMS based dielectric elastomers with respect to the temperature at given electric field...

  8. Method of making dielectric capacitors with increased dielectric breakdown strength

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

    2017-05-09

    The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

  9. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Mateiu, Ramona Valentina; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Silicone elastomers have been heavily investigated as candidates for dielectric elastomers and are as such almost ideal candidates with their inherent softness and compliance but they suffer from low dielectric permittivity. This shortcoming has been sought optimized by many means during recent...... years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we investigate the electrical breakdown phenomena of various types of permittivity-enhanced silicone elastomers. Two types...... of silicone elastomers are investigated and different types of breakdown are discussed. Furthermore the use of voltage stabilizers in silicone-based dielectric elastomers is investigated and discussed....

  10. Core-satellite Ag@BaTiO3 nanoassemblies for fabrication of polymer nanocomposites with high discharged energy density, high breakdown strength and low dielectric loss.

    Science.gov (United States)

    Xie, Liyuan; Huang, Xingyi; Li, Bao-Wen; Zhi, Chunyi; Tanaka, Toshikatsu; Jiang, Pingkai

    2013-10-28

    Dielectric polymer nanocomposites with high dielectric constant have wide applications in high energy density electronic devices. The introduction of high dielectric constant ceramic nanoparticles into a polymer represents an important route to fabricate nanocomposites with high dielectric constant. However, the nanocomposites prepared by this method generally suffer from relatively low breakdown strength and high dielectric loss, which limit the further increase of energy density and energy efficiency of the nanocomposites. In this contribution, by using core-satellite structured ultra-small silver (Ag) decorated barium titanate (BT) nanoassemblies, we successfully fabricated high dielectric constant polymer nanocomposites with enhanced breakdown strength and lower dielectric loss in comparison with conventional polymer-ceramic particulate nanocomposites. The discharged energy density and energy efficiency are derived from the dielectric displacement-electric field loops of the polymer nanocomposites. It is found that, by using the core-satellite structured Ag@BT nanoassemblies as fillers, the polymer nanocomposites can not only have higher discharged energy density but also have high energy efficiency. The mechanism behind the improved electrical properties was attributed to the Coulomb blockade effect and the quantum confinement effect of the introduced ultra-small Ag nanoparticles. This study could serve as an inspiration to enhance the energy storage densities of dielectric polymer nanocomposites.

  11. High voltage capacitor design and the determination of solid dielectric voltage breakdown

    International Nuclear Information System (INIS)

    Hutapea, S.

    1976-01-01

    The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

  12. Dielectric breakdown in liquid helium

    International Nuclear Information System (INIS)

    Miller, F.L. Jr.

    1975-01-01

    The experimental apparatus consists of a 130 kV dc 80 kV ac intermediate voltage unit and a 600 kV dc 700 kV high voltage unit under construction. The experimental devices consist of an insulated container, or dewar, in which two electrodes are placed, one above the other. A voltage is built up in one electrode until an arc occurs to the other electrode. A typical set of breakdown data is shown. A mathematical analysis is briefly described. (MOW)

  13. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Zhang, Meiyun; Long, Shibing [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Lian, Xiaojuan; Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Larcher, Luca [DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Wu, Ernest [IBM Research Division, Essex Junction, Vermont 05452 (United States)

    2016-01-04

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  14. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Mateiu, Ramona Valentina; Skov, Anne Ladegaard

    2017-01-01

    years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we focus on the chloro propyl functionalized silicone elastomers prepared in Madsen et al[2] and we investigate the electrical...

  15. Spectroscopic investigations of high-power laser-induced dielectric breakdown in gas mixtures containing carbon monoxide.

    Science.gov (United States)

    Civis, Svatopluk; Babánková, Dagmar; Cihelka, Jaroslav; Sazama, Petr; Juha, Libor

    2008-08-07

    Large-scale plasma was created in gas mixtures containing carbon monoxide by high-power laser-induced dielectric breakdown (LIDB). The composition of the mixtures used corresponded to a cometary and/or meteoritic impact into the Earth's early atmosphere. A multiple-centimeter-sized fireball was created by focusing a single 85 J, 450 ps near-infrared laser pulse into the center of a 15 L gas cell. The excited reaction intermediates that formed in various stages of the LIDB plasma chemical evolution were investigated by optical emission spectroscopy (OES) with temporal resolution. Special attention was paid to any OES signs of molecular ions. However, carbon monoxide cations were registered only if their production was enhanced by Penning ionization, i.e., excess He was added to the CO. The chemical consequences of laser-produced plasma generation in a CO-N 2-H 2O mixture were investigated using high resolution Fourier-transform infrared absorption spectroscopy (FTIR) and gas chromatography (GC). Several simple inorganic and organic compounds were identified in the reaction mixture exposed to ten laser sparks. H 2 (18)O was used to avoid possible contamination. The large laser spark triggered more complex reactivity originating in carbon monoxide than expected, when taking into account the strong triple bond of carbon monoxide causing typically inefficient dissociation of this molecule in electrical discharges.

  16. Enhanced electric polarization and breakdown strength in the all-organic sandwich-structured poly(vinylidene fluoride-based dielectric film for high energy density capacitor

    Directory of Open Access Journals (Sweden)

    Yue Zhang

    2017-07-01

    Full Text Available It is essential to develop the dielectric energy storage capacitor for the modern electrical and electronic equipment. Here, the all-organic sandwich-structured composite with superior breakdown strength and delayed saturation polarization is presented. Furthermore, the energy storage characteristics of the composite are enhanced by the poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene fiber and the redistribution of local electric field. The dielectric permittivity of composite increases to ∼16, and the discharged energy density is high to ∼8.7 J/cm3 at 360 kV/mm, and the breakdown strength is up to ∼408 kV/mm. The excellent performance of the composite broadens the application in the field of power electronics industry.

  17. Improved polymer nanocomposite dielectric breakdown performance through barium titanate to epoxy interface control

    Energy Technology Data Exchange (ETDEWEB)

    Siddabattuni, Sasidhar [Missouri University of Science and Technology (formerly the University of Missouri-Rolla), Chemistry Department, 400W. 11th Street, Rolla, MO 65409 (United States); Schuman, Thomas P., E-mail: tschuman@mst.edu [Missouri University of Science and Technology (formerly the University of Missouri-Rolla), Chemistry Department, 400W. 11th Street, Rolla, MO 65409 (United States); Dogan, Fatih [Missouri University of Science and Technology, Materials Science and Engineering Department, 1400N. Bishop Avenue, Rolla, MO 65409 (United States)

    2011-11-15

    Highlights: > A covalent filler-matrix interface improves the dielectric properties of a polymer-particle nanocomposite dielectric. > A covalent interface reduced the polymer free volume around the nanoparticles as assessed through T{sub g} measurements. > Composite T{sub g} was raised and breakdown strength improved for nanocomposites with a covalent polymer-particle interface. > A larger Maxwell-Wagner (MW) relaxation correlated with reduced breakdown strengths and energy storage densities. > The MW relaxation could be considered a dielectric defect regarding breakdown strength and energy storage density. - Abstract: A composite approach to dielectric design has the potential to provide improved permittivity as well as high breakdown strength and thus afford greater electrical energy storage density. Interfacial coupling is an effective approach to improve the polymer-particle composite dielectric film resistance to charge flow and dielectric breakdown. A bi-functional interfacial coupling agent added to the inorganic oxide particles' surface assists dispersion into the thermosetting epoxy polymer matrix and upon composite cure reacts covalently with the polymer matrix. The composite then retains the glass transition temperature of pure polymer, provides a reduced Maxwell-Wagner relaxation of the polymer-particle composite, and attains a reduced sensitivity to dielectric breakdown compared to particle epoxy composites that lack interfacial coupling between the composite filler and polymer matrix. Besides an improved permittivity, the breakdown strength and thus energy density of a covalent interface nanoparticle barium titanate in epoxy composite dielectric film, at a 5 vol.% particle concentration, was significantly improved compared to a pure polymer dielectric film. The interfacially bonded, dielectric composite film had a permittivity {approx}6.3 and at a 30 {mu}m thickness achieved a calculated energy density of 4.6 J/cm{sup 3}.

  18. Improved polymer nanocomposite dielectric breakdown performance through barium titanate to epoxy interface control

    International Nuclear Information System (INIS)

    Siddabattuni, Sasidhar; Schuman, Thomas P.; Dogan, Fatih

    2011-01-01

    Highlights: → A covalent filler-matrix interface improves the dielectric properties of a polymer-particle nanocomposite dielectric. → A covalent interface reduced the polymer free volume around the nanoparticles as assessed through T g measurements. → Composite T g was raised and breakdown strength improved for nanocomposites with a covalent polymer-particle interface. → A larger Maxwell-Wagner (MW) relaxation correlated with reduced breakdown strengths and energy storage densities. → The MW relaxation could be considered a dielectric defect regarding breakdown strength and energy storage density. - Abstract: A composite approach to dielectric design has the potential to provide improved permittivity as well as high breakdown strength and thus afford greater electrical energy storage density. Interfacial coupling is an effective approach to improve the polymer-particle composite dielectric film resistance to charge flow and dielectric breakdown. A bi-functional interfacial coupling agent added to the inorganic oxide particles' surface assists dispersion into the thermosetting epoxy polymer matrix and upon composite cure reacts covalently with the polymer matrix. The composite then retains the glass transition temperature of pure polymer, provides a reduced Maxwell-Wagner relaxation of the polymer-particle composite, and attains a reduced sensitivity to dielectric breakdown compared to particle epoxy composites that lack interfacial coupling between the composite filler and polymer matrix. Besides an improved permittivity, the breakdown strength and thus energy density of a covalent interface nanoparticle barium titanate in epoxy composite dielectric film, at a 5 vol.% particle concentration, was significantly improved compared to a pure polymer dielectric film. The interfacially bonded, dielectric composite film had a permittivity ∼6.3 and at a 30 μm thickness achieved a calculated energy density of 4.6 J/cm 3 .

  19. Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

    International Nuclear Information System (INIS)

    Wang Yan-Rong; Yang Hong; Xu Hao; Wang Xiao-Lei; Luo Wei-Chun; Qi Lu-Wei; Zhang Shu-Xiang; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2015-01-01

    A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D and A) cycles, the D and A time, and the total annealing time. The results show that the increases of the number of D and A cycles (from 1 to 2) and D and A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D and A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D and A times and numbers of D and A cycles induce different breakdown mechanisms. (paper)

  20. Breakdown of coupling dielectrics for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

    1999-01-01

    Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

  1. Electrical Breakdown and Mechanical Ageing in Dielectric Elastomers

    DEFF Research Database (Denmark)

    Zakaria, Shamsul Bin

    Dielectric elastomers (DE) are used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. For many applications, one of the major factors that limits the DE performance is premature electrical breakdown. There are many approaches that have been......, the lifetime of elastomer materials needs further investigation. Therefore, in the second strategy, several DE parameters such as Young’s moduli, breakdown strengths and dielectric permittivities of PDMS elastomers filled with hard filler particles were investigated after being subjected to pre...

  2. Breakdown, fractoemission, diffusion: role of defects in dielectrics

    International Nuclear Information System (INIS)

    Vigouroux, J.P.; Serruys, Y.

    1987-01-01

    During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

  3. Two-phase mixed media dielectric with macro dielectric beads for enhancing resistivity and breakdown strength

    Science.gov (United States)

    Falabella, Steven; Meyer, Glenn A; Tang, Vincent; Guethlein, Gary

    2014-06-10

    A two-phase mixed media insulator having a dielectric fluid filling the interstices between macro-sized dielectric beads packed into a confined volume, so that the packed dielectric beads inhibit electro-hydrodynamically driven current flows of the dielectric liquid and thereby increase the resistivity and breakdown strength of the two-phase insulator over the dielectric liquid alone. In addition, an electrical apparatus incorporates the two-phase mixed media insulator to insulate between electrical components of different electrical potentials. And a method of electrically insulating between electrical components of different electrical potentials fills a confined volume between the electrical components with the two-phase dielectric composite, so that the macro dielectric beads are packed in the confined volume and interstices formed between the macro dielectric beads are filled with the dielectric liquid.

  4. Novel dielectric reduces corona breakdown in ac capacitors

    Science.gov (United States)

    Loehner, J. L.

    1972-01-01

    Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

  5. High frequency breakdown voltage

    International Nuclear Information System (INIS)

    Chu, Thanh Duy.

    1992-03-01

    This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

  6. Research of Dielectric Breakdown Micro fluidic Sampling Chip

    International Nuclear Information System (INIS)

    Jiang, F.; Lei, Y.; Yu, J.

    2013-01-01

    Micro fluidic chip is mainly driven electrically by external electrode and array electrode, but there are certain disadvantages in both of ways, which affect the promotion and application of micro fluidic technology. This paper discusses a scheme that uses the conductive solution in a microchannel made by PDMS, replacing electrodes and the way of dielectric breakdown to achieve microfluidic chip driver. It could reduce the driving voltage and simplify the chip production process. To prove the feasibility of this method, we produced a micro fluidic chip used in PDMS material with the lithography technology and experimented it. The results showed that using the dielectric breakdown to achieve microfluidic chip driver is feasible, and it has certain application prospect.

  7. Dielectric breakdown in silica-amorphous polymer nanocomposite films: the role of the polymer matrix.

    Science.gov (United States)

    Grabowski, Christopher A; Fillery, Scott P; Westing, Nicholas M; Chi, Changzai; Meth, Jeffrey S; Durstock, Michael F; Vaia, Richard A

    2013-06-26

    The ultimate energy storage performance of an electrostatic capacitor is determined by the dielectric characteristics of the material separating its conductive electrodes. Polymers are commonly employed due to their processability and high breakdown strength; however, demands for higher energy storage have encouraged investigations of ceramic-polymer composites. Maintaining dielectric strength, and thus minimizing flaw size and heterogeneities, has focused development toward nanocomposite (NC) films; but results lack consistency, potentially due to variations in polymer purity, nanoparticle surface treatments, nanoparticle size, and film morphology. To experimentally establish the dominant factors in broad structure-performance relationships, we compare the dielectric properties for four high-purity amorphous polymer films (polymethyl methacrylate, polystyrene, polyimide, and poly-4-vinylpyridine) incorporating uniformly dispersed silica colloids (up to 45% v/v). Factors known to contribute to premature breakdown-field exclusion and agglomeration-have been mitigated in this experiment to focus on what impact the polymer and polymer-nanoparticle interactions have on breakdown. Our findings indicate that adding colloidal silica to higher breakdown strength amorphous polymers (polymethyl methacrylate and polyimide) causes a reduction in dielectric strength as compared to the neat polymer. Alternatively, low breakdown strength amorphous polymers (poly-4-vinylpyridine and especially polystyrene) with comparable silica dispersion show similar or even improved breakdown strength for 7.5-15% v/v silica. At ∼15% v/v or greater silica content, all the polymer NC films exhibit breakdown at similar electric fields, implying that at these loadings failure becomes independent of polymer matrix and is dominated by silica.

  8. Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

    Science.gov (United States)

    Carman, Robert; Ward, Barry; Kane, Deborah

    2011-10-01

    The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

  9. Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Min Sung; Yamamoto, Akio [Dept. of Precision Engineering, School of Engineering, The University of Tokyo, Tokyo (Japan)

    2016-09-15

    Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively.

  10. Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

    International Nuclear Information System (INIS)

    Cho, Min Sung; Yamamoto, Akio

    2016-01-01

    Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively

  11. Electrode/Dielectric Strip For High-Energy-Density Capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S.

    1994-01-01

    Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

  12. Study of Dielectric Breakdown Performance of Transformer Oil Based Magnetic Nanofluids

    Directory of Open Access Journals (Sweden)

    Yuzhen Lv

    2017-07-01

    Full Text Available Research on the transformer oil-based nanofluids (NFs has been raised expeditiously over the past decade. Although, there is discrepancy in the stated results and inadequate understanding of the mechanisms of improvement of dielectric nanofluids, these nanofluids have emerged as a potential substitute of mineral oils as insulating and heat removal fluids for high voltage equipment. The transformer oil (TO based magnetic fluids (ferrofluids may be regarded as the posterity insulation fluids as they propose inspiring unique prospectus to improve dielectric breakdown strength, as well as heat transfer efficiency, as compared to pure transformer oils. In this work, transformer oil-based magnetic nanofluids (MNFs are prepared by dispersal of Fe3O4 nanoparticles (MNPs into mineral oil as base oil, with various NPs loading from 5 to 80% w/v. The lightning impulse breakdown voltages (BDV measurement was conducted in accordance with IEC 60897 by using needle to sphere electrodes geometry. The test results showed that dispersion of magnetic NPs may improve the insulation strength of MO. With the increment of NPs concentrations, the positive lightning impulse (LI breakdown strength of TO is first raised, up to the highest value at 40% loading, and then tends to decrease at higher concentrations. The outcomes of negative LI breakdown showed that BDV of MNFs, with numerous loadings, were inferior to the breakdown strength of pure MO. The 40% concentration of nanoparticles (optimum concentration was selected, and positive and negative LI breakdown strength was also further studied at different sizes (10 nm, 20 nm, 30 nm and 40 nm of NPs and different electrode gap distances. Augmentation in the BDV of the ferrofluids (FFs is primarily because of dielectric and magnetic features of Fe3O4 nanoaprticles, which act as electron scavengers and decrease the rate of free electrons produced in the ionization process. Research challenges and technical difficulties

  13. High gradient RF breakdown study

    International Nuclear Information System (INIS)

    Laurent, L.; Luhmann, N.C. Jr.; Scheitrum, G.; Hanna, S.; Pearson, C.; Phillips, R.

    1998-01-01

    Stanford Linear Accelerator Center and UC Davis have been investigating high gradient RF breakdown and its effects on pulse shortening in high energy microwave devices. RF breakdown is a critical issue in the development of high power microwave sources and next generation linear accelerators since it limits the output power of microwave sources and the accelerating gradient of linacs. The motivation of this research is to find methods to increase the breakdown threshold level in X-band structures by reducing dark current. Emphasis is focused on improved materials, surface finish, and cleanliness. The test platform for this research is a traveling wave resonant ring. A 30 MW klystron is employed to provide up to 300 MW of traveling wave power in the ring to trigger breakdown in the cavity. Five TM 01 cavities have previously been tested, each with a different combination of surface polish and/or coating. The onset of breakdown was extended up to 250 MV/m with a TiN surface finish, as compared to 210 MV/m for uncoated OFE copper. Although the TiN coating was helpful in depressing the field emission, the lowest dark current was obtained with a 1 microinch surface finish, single-point diamond-turned cavity

  14. Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes

    International Nuclear Information System (INIS)

    Pei, Dongfei; Nichols, Michael T.; Shohet, J. Leon; King, Sean W.; Clarke, James S.; Nishi, Yoshio

    2014-01-01

    Time-dependent dielectric breakdown (TDDB) is one of the major concerns for low-k dielectric materials. During plasma processing, low-k dielectrics are subjected to vacuum ultraviolet photon radiation and charged-particle bombardment. To examine the change of TDDB properties, time-to-breakdown measurements are made to porous SiCOH before and after plasma exposure. Significant discrepancies between mercury and solid-metal probes are observed and have been shown to be attributed to mercury diffusion into the dielectric porosities

  15. Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes

    Energy Technology Data Exchange (ETDEWEB)

    Pei, Dongfei; Nichols, Michael T.; Shohet, J. Leon, E-mail: shohet@engr.wisc.edu [Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, Sean W.; Clarke, James S. [Intel Corporation, Hillsboro, Oregon 97124 (United States); Nishi, Yoshio [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2014-09-01

    Time-dependent dielectric breakdown (TDDB) is one of the major concerns for low-k dielectric materials. During plasma processing, low-k dielectrics are subjected to vacuum ultraviolet photon radiation and charged-particle bombardment. To examine the change of TDDB properties, time-to-breakdown measurements are made to porous SiCOH before and after plasma exposure. Significant discrepancies between mercury and solid-metal probes are observed and have been shown to be attributed to mercury diffusion into the dielectric porosities.

  16. Evaluation of high temperature capacitor dielectrics

    Science.gov (United States)

    Hammoud, Ahmad N.; Myers, Ira T.

    1992-01-01

    Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

  17. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

    International Nuclear Information System (INIS)

    Xu Hao; Yang Hong; Luo Wei-Chun; Xu Ye-Feng; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Qi Lu-Wei; Li Jun-Feng; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2016-01-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high- k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it / N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. (paper)

  18. Electric Conductivity and Dielectric-Breakdown Behavior for Polyurethane Magnetic Elastomers.

    Science.gov (United States)

    Sasaki, Shuhei; Tsujiei, Yuri; Kawai, Mika; Mitsumata, Tetsu

    2017-02-23

    The electric-voltage dependence of the electric conductivity for cross-linked and un-cross-linked magnetic elastomers was measured at various magnetic fields, and the effect of cross-linking on the electric conductivity and the dielectric-breakdown behavior was investigated. The electric conductivity for un-cross-linked elastomers at low voltages was independent of magnetic fields and the volume fraction of magnetic particles, indicating the electric conduction in the polyurethane matrix. At high voltages, the electric conductivity increased with the magnetic field, showing the electric conduction via chains of magnetic particles. On the other hand, the electric conductivity at low voltages for cross-linked elastomers with volume fractions below 0.06 was independent of the magnetic field, suggesting the electric conduction in the polyurethane matrix. At volume fractions above 0.14, the electric conductivity increased with the magnetic field, suggesting the electric conduction via chains of magnetic particles. At high voltages, the electric conductivity for cross-linked elastomers with a volume fraction of 0.02 was independent of the magnetic field, indicating the electric conduction through the polyurethane matrix. At volume fractions above 0.06, the electric conductivity suddenly increased at a critical voltage, exhibiting the dielectric breakdown at the bound layer of magnetic particles and/or the discontinuous part between chains.

  19. Electric breakdown of high polymer insulating materials at cryogenic temperature

    International Nuclear Information System (INIS)

    Kim, Sanhyon; Yoshino, Katsumi

    1985-01-01

    Cryogenic properties : temperature dependence of E sub(b) and effects of media upon E sub(b) were investigated on several high polymers. Temperature conditions were provided by liquid He (4.2 K), liquid N 2 (77 K) and cryogen (dry ice-methyl alcohol, 194 K). Silicone oil was used also at ambient temperature and elevated temperature. Polymer film coated with gold by vacuum evaporation was placed in cryostat, and high tension from pulse generator was applied to the film. Dielectric breakdowns were detected by oscilloscope and observed visually. The results of experiment are summerized as follow. (1) E sub(b) of film in He is affected by medium remarkably, and covering with 3-methyl pentane is effective for increasing E sub(b). (2) Temperature dependence of E sub(b) was not recognized in cryogenic temperature below liquid N 2 . (3) Temperature characteristic of E sub(b) changes considerably at the critical temperature T sub(c), and T sub(c) is dependent on material. (4) Strength against dielectric breakdown under cryogenic temperature is not affected by bridging caused by irradiation of electron beam. (5) Dielectric breakdown is thought to be caused by electronic process such as electron avalanche. Consequently, for designing insulation for the temperature below liquid He, insulation design for liquid N 2 is thought to be sufficient. However, the degradation and breakdown by mechanical stress under cryogenic temperature must be taken into consideration. (Ishimitsu, A.)

  20. Nanocomposite dielectrics in PbO-BaO-Na2O-Nb2O5-SiO2 system with high breakdown strength for high voltage capacitor applications.

    Science.gov (United States)

    Zhang, Qingmeng; Luo, Jun; Tang, Qun; Han, Dongfang; Zhou, Yi; Du, Jun

    2012-11-01

    Nanocomposite dielectrics in 6PbO-4BaO-20Na2O-40Nb2O5-30SiO2 system were prepared via melt-quenching followed by controlled crystallization. X-ray diffraction studies reveal that Pb2Nb2O7, Ba,NaNb5O15, NaNbO3 and PbNb2O6 phases are formed from the as-quenched glass annealed in temperature range from 700 degrees C to 850 degrees C. Ba2NaNb5O15, Pb2Nb2O7 crystallizes at 700 degrees C and then Pb2Nb2O7 disappears at 850 degrees C, while PbNb2O6 and NaNbO3 are formed at 850 degrees C. Microstructural observation shows that the crystallized particles are nanometer-sized and randomly distributed with glass matrix being often found at grain boundaries. The dielectric constant of the nanocomposites formed at different crystallization temperatures shows good frequency and electric field stability. The breakdown strength is slightly decreased when the glass-ceramics thickness is varied from 1 mm to 4 mm. The corresponding energy density could reach 2.96 J/cm3 with a breakdown strength of 58 kV/mm for thickness of 1 mm.

  1. Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

    Science.gov (United States)

    Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

    2017-10-01

    The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

  2. Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Magtoto, N. P.; Niu, C.; Ekstrom, B. M.; Addepalli, S.; Kelber, J. A.

    2000-01-01

    Dielectric breakdown of 7-Aa-thick Al 2 O 3 (111) films grown on Ni 3 Al(111) under ultrahigh vacuum conditions is induced by increasing the bias voltage on the scanning tunneling microscopy tip under constant current feedback. Breakdown is marked by the precipitous retreat of the tip from the surface, and the formation of an elevated feature in the scanning tunneling microscopy image, typically greater than 5 nm high and ∼100 nm in diameter. Constant height measurements performed at tip/sample distances of 1 nm or less yield no tip/substrate physical interaction, indicating that such features do not result from mass transport. Consistent with this, current/voltage measurements within the affected regions indicate linear behavior, in contrast to a band gap of 1.5 eV observed at unaffected regions of the oxide surface. A threshold electric field value of 11±1 MV cm -1 is required to induce breakdown, in good agreement with extrapolated values from capacitance measurements on thicker oxides. (c) 2000 American Institute of Physics

  3. The rate of dielectric breakdown weathering of lunar regolith in permanently shadowed regions

    Science.gov (United States)

    Jordan, A. P.; Stubbs, T. J.; Wilson, J. K.; Schwadron, N. A.; Spence, H. E.

    2017-02-01

    Large solar energetic particle events may cause dielectric breakdown in the upper 1 mm of regolith in permanently shadowed regions (PSRs). We estimate how the resulting breakdown weathering compares to meteoroid impact weathering. Although the SEP event rates measured by the Cosmic Ray Telescope for the Effects of Radiation (CRaTER) on the Lunar Reconnaissance Orbiter (LRO) are too low for breakdown to have significantly affected the regolith over the duration of the LRO mission, regolith gardened by meteoroid impacts has been exposed to SEPs for ∼106 yr. Therefore, we estimate that breakdown weathering's production rate of vapor and melt in the coldest PSRs is up to 1.8 - 3.5 ×10-7 kg m-2 yr-1 , which is comparable to that produced by meteoroid impacts. Thus, in PSRs, up to 10-25% of the regolith may have been melted or vaporized by dielectric breakdown. Breakdown weathering could also be consistent with observations of the increased porosity ("fairy castles") of PSR regolith. We also show that it is conceivable that breakdown-weathered material is present in Apollo soil samples. Consequently, breakdown weathering could be an important process within PSRs, and it warrants further investigation.

  4. Enhancement of dielectric breakdown strengths in polymer film capacitors

    International Nuclear Information System (INIS)

    Binder, M.; Mammone, R.J.; Lavene, B.; Rondeau, E.

    1992-01-01

    This paper reports that breakdown voltages of wound, polymer film/metal foil capacitors have been dramatically increased by briefly exposing them (after they had been spirally wound) to a low pressure, low temperature gas plasma. Exposure of wound, polycarbonate-based capacitors to a 96%CF 4 /4%O 2 gas plasma for 4 minutes, for example, produced a 200% increase in breakdown voltage

  5. High field dielectric properties of anisotropic polymer-ceramic composites

    International Nuclear Information System (INIS)

    Tomer, V.; Randall, C. A.

    2008-01-01

    Using dielectrophoretic assembly, we create anisotropic composites of BaTiO 3 particles in a silicone elastomer thermoset polymer. We study a variety of electrical properties in these composites, i.e., permittivity, dielectric breakdown, and energy density as function of ceramic volume fraction and connectivity. The recoverable energy density of these electric-field-structured composites is found to be highly dependent on the anisotropy present in the system. Our results indicate that x-y-aligned composites exhibit higher breakdown strengths along with large recoverable energy densities when compared to 0-3 composites. This demonstrates that engineered anisotropy can be employed to control dielectric breakdown strengths and nonlinear conduction at high fields in heterogeneous systems. Consequently, manipulation of anisotropy in high-field dielectric properties can be exploited for the development of high energy density polymer-ceramic systems

  6. Analysis and comparison of the breakdown performance of semi- insulator and dielectric passivated Si strip detectors

    CERN Document Server

    Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

    2002-01-01

    The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction dep...

  7. Femtosecond laser ablation of dielectric materials in the optical breakdown regime: Expansion of a transparent shell

    International Nuclear Information System (INIS)

    Garcia-Lechuga, M.; Siegel, J.; Hernandez-Rueda, J.; Solis, J.

    2014-01-01

    Phase transition pathways of matter upon ablation with ultrashort laser pulses have been considered to be understood long-since for metals and semiconductors. We provide evidence that also certain dielectrics follow the same pathway, even at high pulse energies triggering optical breakdown. Employing femtosecond microscopy, we observe a characteristic ring pattern within the ablating region that dynamically changes for increasing time delays between pump and probe pulse. These transient Newton rings are related to optical interference of the probe beam reflected at the front surface of the ablating layer with the reflection at the interface of the non-ablating substrate. Analysis of the ring structure shows that the ablation mechanism is initiated by a rarefaction wave leading within a few tens of picoseconds to the formation of a transparent thin shell of reduced density and refractive index, featuring optically sharp interfaces. The shell expands and eventually detaches from the solid material at delays of the order of 100 ps.

  8. Femtosecond laser ablation of dielectric materials in the optical breakdown regime: Expansion of a transparent shell

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lechuga, M.; Siegel, J., E-mail: j.siegel@io.cfmac.csic.es; Hernandez-Rueda, J.; Solis, J. [Laser Processing Group, Instituto de Optica, Serrano 121, 28006 Madrid (Spain)

    2014-09-15

    Phase transition pathways of matter upon ablation with ultrashort laser pulses have been considered to be understood long-since for metals and semiconductors. We provide evidence that also certain dielectrics follow the same pathway, even at high pulse energies triggering optical breakdown. Employing femtosecond microscopy, we observe a characteristic ring pattern within the ablating region that dynamically changes for increasing time delays between pump and probe pulse. These transient Newton rings are related to optical interference of the probe beam reflected at the front surface of the ablating layer with the reflection at the interface of the non-ablating substrate. Analysis of the ring structure shows that the ablation mechanism is initiated by a rarefaction wave leading within a few tens of picoseconds to the formation of a transparent thin shell of reduced density and refractive index, featuring optically sharp interfaces. The shell expands and eventually detaches from the solid material at delays of the order of 100 ps.

  9. Investigation of dielectric breakdown in silica-epoxy nanocomposites using designed interfaces.

    Science.gov (United States)

    Bell, Michael; Krentz, Timothy; Keith Nelson, J; Schadler, Linda; Wu, Ke; Breneman, Curt; Zhao, Su; Hillborg, Henrik; Benicewicz, Brian

    2017-06-01

    Adding nano-sized fillers to epoxy has proven to be an effective method for improving dielectric breakdown strength (DBS). Evidence suggests that dispersion state, as well as chemistry at the filler-matrix interface can play a crucial role in property enhancement. Herein we investigate the contribution of both filler dispersion and surface chemistry on the AC dielectric breakdown strength of silica-epoxy nanocomposites. Ligand engineering was used to synthesize bimodal ligands onto 15nm silica nanoparticles consisting of long epoxy compatible, poly(glycidyl methacrylate) (PGMA) chains, and short, π-conjugated, electroactive surface ligands. Surface initiated RAFT polymerization was used to synthesize multiple graft densities of PGMA chains, ultimately controlling the dispersion of the filler. Thiophene, anthracene, and terthiophene were employed as π-conjugated surface ligands that act as electron traps to mitigate avalanche breakdown. Investigation of the synthesized multifunctional nanoparticles was effective in defining the maximum particle spacing or free space length (L f ) that still leads to property enhancement, as well as giving insight into the effects of varying the electronic nature of the molecules at the interface on breakdown strength. Optimization of the investigated variables was shown to increase the AC dielectric breakdown strength of epoxy composites as much as 34% with only 2wt% silica loading. Copyright © 2017 Elsevier Inc. All rights reserved.

  10. Simple model of electron beam initiated dielectric breakdown

    International Nuclear Information System (INIS)

    Beers, B.L.; Daniell, R.E.; Delmer, T.N.

    1985-01-01

    A steady state model that describes the internal charge distribution of a planar dielectric sample exposed to a uniform electron beam was developed. The model includes the effects of charge deposition and ionization of the beam, separate trap-modulated mobilities for electrons and holes, electron-hole recombination, and pair production by drifting thermal electrons. If the incident beam current is greater than a certain critical value (which depends on sample thickness as well as other sample properties), the steady state solution is non-physical

  11. Self-Healing, High-Permittivity Silicone Dielectric Elastomer

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

    2016-01-01

    possesses high dielectric permittivity and consists of an interpenetrating polymer network of silicone elastomer and ionic silicone species that are cross-linked through proton exchange between amines and acids. The ionically cross-linked silicone provides self-healing properties after electrical breakdown...... or cuts made directly to the material due to the reassembly of the ionic bonds that are broken during damage. The dielectric elastomers presented in this paper pave the way to increased lifetimes and the ability of dielectric elastomers to survive millions of cycles in high-voltage conditions....

  12. Dielectric breakdown and healing of anodic oxide films on aluminium under single pulse anodizing

    International Nuclear Information System (INIS)

    Sah, Santosh Prasad; Tatsuno, Yasuhiro; Aoki, Yoshitaka; Habazaki, Hiroki

    2011-01-01

    Research highlights: → We examined dielectric breakdown of anodic alumina by single pulse anodizing. → Current transients and morphology of discharge channels are dependent upon electrolyte and voltage. → There is a good correlation between current transient and morphology of discharge channel. → Healing of open discharge pores occurs in alkaline silicate, but not in pentaborate electrolyte. - Abstract: Single pulse anodizing of aluminium micro-electrode has been employed to study the behaviour of dielectric breakdown and subsequent oxide formation on aluminium in alkaline silicate and pentaborate electrolytes. Current transients during applying pulse voltage have been measured, and surface has been observed by scanning electron microscopy. Two types of current transients are observed, depending on the electrolyte and applied voltage. There is a good correlation between the current transient behaviour and the shape of discharge channels. In alkaline silicate electrolyte, circular open pores are healed by increasing the pulse width, but such healing is not obvious in pentaborate electrolyte.

  13. Dielectric-breakdown tests of water at 6 MV

    Directory of Open Access Journals (Sweden)

    W. A. Stygar

    2009-01-01

    Full Text Available We have conducted dielectric-breakdown tests on water subject to a single unipolar pulse. The peak voltages used for the tests range from 5.8 to 6.8 MV; the effective pulse widths range from 0.60 to 1.1  μs; and the effective areas tested range from 1.8×10^{5} to 3.6×10^{6}  cm^{2}. The tests were conducted on water-insulated coaxial capacitors. The two electrodes of each capacitor have outer and inner radii of 99 and 56 cm, respectively. Results of the tests are consistent with predictions of the water-dielectric-breakdown relation developed in [Phys. Rev. ST Accel. Beams 9, 070401 (2006PRABFM1098-440210.1103/PhysRevSTAB.9.070401].

  14. Alignment of Boron Nitride Nanofibers in Epoxy Composite Films for Thermal Conductivity and Dielectric Breakdown Strength Improvement.

    Science.gov (United States)

    Wang, Zhengdong; Liu, Jingya; Cheng, Yonghong; Chen, Siyu; Yang, Mengmeng; Huang, Jialiang; Wang, Hongkang; Wu, Guanglei; Wu, Hongjing

    2018-04-15

    Development of polymer-based composites with simultaneously high thermal conductivity and breakdown strength has attracted considerable attention owing to their important applications in both electronic and electric industries. In this work, boron nitride (BN) nanofibers (BNNF) are successfully prepared as fillers, which are used for epoxy composites. In addition, the BNNF in epoxy composites are aligned by using a film casting method. The composites show enhanced thermal conductivity and dielectric breakdown strength. For instance, after doping with BNNF of 2 wt%, the thermal conductivity of composites increased by 36.4% in comparison with that of the epoxy matrix. Meanwhile, the breakdown strength of the composite with 1 wt% BNNF is 122.9 kV/mm, which increased by 6.8% more than that of neat epoxy (115.1 kV/mm). Moreover, the composites have maintained a low dielectric constant and alternating current conductivity among the range of full frequency, and show a higher thermal decomposition temperature and glass-transition temperature. The composites with aligning BNNF have wide application prospects in electronic packaging material and printed circuit boards.

  15. Synthetic Strategies for High Dielectric Constant Silicone Elastomers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt

    synthetic strategies were developed in this Ph.D. thesis, in order to create silicone elastomers with high dielectric constants and thereby higher energy densities. The work focused on maintaining important properties such as dielectric loss, electrical breakdown strength and elastic modulus....... The methodology therefore involved chemically grafting high dielectric constant chemical groups onto the elastomer network, as this would potentially provide a stable elastomer system upon continued activation of the material. The first synthetic strategy involved the synthesis of a new type of cross...... extender’ that allowed for chemical modifications such as Cu- AAC. This route was promising for one-pot elastomer preparation and as a high dielectric constant additive to commercial silicone systems. The second approach used the borane-catalysed Piers-Rubinsztajn reaction to form spatially well...

  16. A measurement technique of time-dependent dielectric breakdown in MOS capacitors

    Science.gov (United States)

    Li, S. P.

    1974-01-01

    The statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.

  17. Experimental Demonstration of Effective Medium Approximation Breakdown in Deeply Subwavelength All-Dielectric Multilayers

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Andryieuski, Andrei; Takayama, Osamu

    2015-01-01

    We report the first experimental demonstration of anomalous breakdown of the effective medium approximation in all-dielectric deeply subwavelength thickness (d∼λ/160-λ/30) multilayers, as recently predicted theoretically [H. H. Sheinfux et al., Phys. Rev. Lett. 113, 243901 (2014)]. Multilayer...... stacks are composed of alternating alumina and titania layers fabricated using atomic layer deposition. For light incident on such multilayers at angles near the total internal reflection, we observe pronounced differences in the reflectance spectra for structures with 10- vs 20-nm thick layers, as well...

  18. Enhancement of Dielectric Breakdown Strength and Energy Conversion Efficiency of Niobate Glass-Ceramics by Sc2O3 Doping

    Science.gov (United States)

    Xiao, Shi; Xiu, Shaomei; Yang, Ke; Shen, Bo; Zhai, Jiwei

    2018-01-01

    Niobate glass-ceramics K2O-SrO-Nb2O5-B2O3-Al2O3-SiO2 (KSN-BAS) doped with different amounts of Sc2O3 have been prepared through a melt quenching/controlled crystallization method, and the influence of the Sc2O3 content on their phase composition, microstructure, dielectric performance, and charge-discharge properties investigated. X-ray powder diffraction results showed that the peak positions of the KSr2Nb5O15 phase shifted to higher angle and the glass-ceramic microstructures were significantly improved by Sc2O3 addition. Based on these results, 0.5 mol.% Sc2O3 doping was found to achieve remarkable enhancement in energy storage density, which reached 9.63 ± 0.39 J/cm3 at dielectric breakdown strength of 1450.38 ± 29.01 kV/cm with high conversion efficiency of ˜ 92.1%. For pulsed power applications, discharge speed of 17 ns and power density of 0.48 MW/cm3 were obtained in the glass-ceramic with 0.5 mol.% Sc2O3. These results could provide a new design strategy for high-performance dielectric capacitors.

  19. Liquid argon dielectric breakdown studies with the MicroBooNE purification system

    Energy Technology Data Exchange (ETDEWEB)

    Acciarri, R.; Carls, B.; James, C.; Johnson, B.; Jostlein, H.; Lockwitz, S.; Lundberg, B.; Raaf, J. L.; Rameika, R.; Rebel, B.; Zeller, G. P.; Zuckerbrot, M.

    2014-11-01

    The proliferation of liquid argon time projection chamber detectors makes the characterization of the dielectric properties of liquid argon a critical task. To improve understanding of these properties, a systematic study of the breakdown electric field in liquid argon was conducted using a dedicated cryostat connected to the MicroBooNE cryogenic system at Fermilab. An electrode sphere-plate geometry was implemented using spheres with diameters of 1.3 mm, 5.0 mm, and 76 mm. The MicroBooNE cryogenic system allowed measurements to be taken at a variety of electronegative contamination levels ranging from a few parts-per-million to tens of parts-per-trillion. The cathode-anode distance was varied from 0.1 mm to 2.5 cm. The results demonstrate a geometric dependence of the electric field strength at breakdown. This study is the first time that the dependence of the breakdown field on stressed cathode area has been shown for liquid argon.

  20. Improved Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

    1994-01-01

    Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

  1. Organic dielectrics in high voltage cables

    Energy Technology Data Exchange (ETDEWEB)

    Vermeer, J

    1962-03-01

    It appears that the limit has been reached in the applicability of oil-impregnated paper as the dielectric for ehv cables, as with rising voltages the prevention of conductor losses becomes increasingly difficult, while the dielectric losses of the insulation, increasing as the square of the voltage, contribute to a greater extent to the temperature rise of the conductor. The power transmitting capacity of ehv cables reaches a maximum at 500 to 600 kV for these reasons. Apart from artificial cooling, a substantial improvement can be obtained only with the use of insulating materials with much lower dielectric losses; these can moreover be applied with a smaller wall thickness, but this means higher field strengths. Synthetic polymer materials meet these requirements but can be used successfully only in the form of lapped film tapes impregnated with suitable liquids. The electrical properties of these heterogeneous dielectrics, in particular, their impulse breakdown strengths are studied in detail.

  2. A Study of the Dielectric Breakdown of SiO2 Films on Si by the Self- Quenching Technique

    Science.gov (United States)

    1974-10-01

    Cambell . Much of the early work on the breakdown of oxide films in 2 1 Q MOS structures was done by N. Klein and his coworkers...Electron Physics, 26, Academic Press. New York (1969). P. J. Harrop and D. S. Cambell , "Dielectric Properties of Thin Films," Handbook of Thin Film

  3. Pre-breakdown processes in a dielectric fluid in inhomogeneous pulsed electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Shneider, Mikhail N., E-mail: m.n.shneider@gmail.com [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Pekker, Mikhail [MMSolution, 6808 Walker Street, Philadelphia, Pennsylvania 19135 (United States)

    2015-06-14

    We consider the development of pre-breakdown cavitation nanopores appearing in the dielectric fluid under the influence of the electrostrictive stresses in the inhomogeneous pulsed electric field. It is shown that three characteristic regions can be distinguished near the needle electrode. In the first region, where the electric field gradient is greatest, the cavitation nanopores, occurring during the voltage nanosecond pulse, may grow to the size at which an electron accelerated by the field inside the pores can acquire enough energy for excitation and ionization of the liquid on the opposite pore wall, i.e., the breakdown conditions are satisfied. In the second region, the negative pressure caused by the electrostriction is large enough for the cavitation initiation (which can be registered by optical methods), but, during the voltage pulse, the pores do not reach the size at which the potential difference across their borders becomes sufficient for ionization or excitation of water molecules. And, in the third, the development of cavitation is impossible, due to an insufficient level of the negative pressure: in this area, the spontaneously occurring micropores do not grow and collapse under the influence of surface tension forces. This paper discusses the expansion dynamics of the cavitation pores and their most probable shape.

  4. Observation of Multi-GeV Breakdown Thresholds in Dielectric Wakefield Structures

    International Nuclear Information System (INIS)

    Thompson, M.C.; Thompson, M.C.; Yoder, R.B.; Hogan, M.J.; Ischebeck, R.; Kirby, N.A.; Siemann, Robert H.; Walz, D.R.; Badakov, H.; Rosenzweig, J.B.; Travish, G.; Scott, A.; Muggli, P.

    2008-01-01

    An experiment designed to test the breakdown threshold of a dielectric subjected to the GV/m-scale electric-fields of an intense electron-beam has been completed. In this experiment at the Final Focus Test Beam (FFTB) facility, the 28.5 GeV SLAC electron beam was focused down and propagated through short fused-silica capillary-tubes with internal diameters of as little as 100 (micro)m. The electric field at the inner surface of the tubes was varied from about 1 GV/m to 22 GV/m by adjusting the longitudinal compression of the electron bunch. We observed a sharp increase in optical emissions from the capillaries in the middle part of this surface field range which we believe indicates the transition between sustainable field levels and breakdown. If this initial interpretation is correct, the multi-GV/m surfaced fields that were sustained equate to on axis accelerating field of several GV/m

  5. Dielectric elastomers, with very high dielectric permittivity, based on silicone and ionic interpenetrating networks

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Hvilsted, Søren

    2015-01-01

    permittivity and the Young's modulus of the elastomer. One system that potentially achieves this involves interpenetrating polymer networks (IPNs), based on commercial silicone elastomers and ionic networks from amino- and carboxylic acid-functional silicones. The applicability of these materials as DEs...... are obtained while dielectric breakdown strength and Young's modulus are not compromised. These good overall properties stem from the softening effect and very high permittivity of ionic networks – as high as ε′ = 7500 at 0.1 Hz – while the silicone elastomer part of the IPN provides mechanical integrity...

  6. Theoretical Investigations of Dielectric Breakdown in CO2: Implications for Atmospheric Discharges on Mars (and Venus)

    Science.gov (United States)

    Riousset, J. A.

    2017-12-01

    The detection of an atmospheric discharge in the Martian atmosphere by Ruf et al. [GRL, 36, L13202, 2009] supports the idea of a Martian atmospheric electric circuit [Farrell and Desch, JGR, 106, E4, 2001]. However, the lack of subsequent detection of similar events raises the question of the conditions of their initiation, and the existence of Martian lightning remains a controversial question. On Earth, atmospheric electricity manifests itself in the form of glow, corona, streamer, and leader discharges observed as Saint Elmo's fire, sprites, lightning and jets discharges, and other Transient Luminous Events (TLEs). All of these are dielectric breakdown governed by different physics. Their initiation is associated with the crossing of specific electric field thresholds: relativistic runaway, streamer propagation, conventional breakdown, or thermal runaway thresholds, some better understood than others. For example, the initiation of a lightning discharge is known to occur when the local electric field exceeds a value similar to relativistic runaway field, but the exact threshold, as well as the physical mechanisms at work, remain unclear to date. Scaling laws for electric fields (and other quantities) have been established by Pasko et al. [GRL, 25(12), 2123-2126, 1998] and Pasko [NATO Sci. Series, Springer, 253-311, 2006]. In this work, we develop profiles for initiation criteria in air and in other atmospheric environments. We further calculate their associated scaling laws to determine the ability to trigger lightning flashes and TLEs on Mars. This lets us predict the likelihood of electrical discharges and calculate the expected electric field conditions, under which discharges could be observed. We develop the analogy between Earth sand storm [Nicoll et al., Env. Res. Lett., 6, 014001, 2001] and Martian dust storms [Melnik and Parrot, JGR, 103(A12), 1998] to investigate the charge structure and resulting electric fields necessary to initiate dielectric

  7. Dielectric-Lined High-Gradient Accelerator Structure

    Energy Technology Data Exchange (ETDEWEB)

    Jay L. Hirshfield

    2012-04-24

    Rectangular particle accelerator structures with internal planar dielectric elements have been studied, with a view towards devising structures with lower surface fields for a given accelerating field, as compared with structures without dielectrics. Success with this concept is expected to allow operation at higher accelerating gradients than otherwise on account of reduced breakdown probabilities. The project involves studies of RF breakdown on amorphous dielectrics in test cavities that could enable high-gradient structures to be built for a future multi-TeV collider. The aim is to determine what the limits are for RF fields at the surfaces of selected dielectrics, and the resulting acceleration gradient that could be achieved in a working structure. The dielectric of principal interest in this study is artificial CVD diamond, on account of its advertised high breakdown field ({approx}2 GV/m for dc), low loss tangent, and high thermal conductivity. Experimental studies at mm-wavelengths on materials and structures for achieving high acceleration gradient were based on the availability of the 34.3 GHz third-harmonic magnicon amplifier developed by Omega-P, and installed at the Yale University Beam Physics Laboratory. Peak power from the magnicon was measured to be about 20 MW in 0.5 {micro}s pulses, with a gain of 54 dB. Experiments for studying RF high-field effects on CVD diamond samples failed to show any evidence after more than 10{sup 5} RF pulses of RF breakdown up to a tangential surface field strength of 153 MV/m; studies at higher fields were not possible due to a degradation in magnicon performance. A rebuild of the tube is underway at this writing. Computed performance for a dielectric-loaded rectangular accelerator structure (DLA) shows highly competitive properties, as compared with an existing all-metal structure. For example, comparisons were made of a DLA structure having two planar CVD diamond elements with a all-metal CERN structure HDS

  8. Dielectric-Lined High-Gradient Accelerator Structure

    International Nuclear Information System (INIS)

    Hirshfield, Jay L.

    2012-01-01

    Rectangular particle accelerator structures with internal planar dielectric elements have been studied, with a view towards devising structures with lower surface fields for a given accelerating field, as compared with structures without dielectrics. Success with this concept is expected to allow operation at higher accelerating gradients than otherwise on account of reduced breakdown probabilities. The project involves studies of RF breakdown on amorphous dielectrics in test cavities that could enable high-gradient structures to be built for a future multi-TeV collider. The aim is to determine what the limits are for RF fields at the surfaces of selected dielectrics, and the resulting acceleration gradient that could be achieved in a working structure. The dielectric of principal interest in this study is artificial CVD diamond, on account of its advertised high breakdown field (∼2 GV/m for dc), low loss tangent, and high thermal conductivity. Experimental studies at mm-wavelengths on materials and structures for achieving high acceleration gradient were based on the availability of the 34.3 GHz third-harmonic magnicon amplifier developed by Omega-P, and installed at the Yale University Beam Physics Laboratory. Peak power from the magnicon was measured to be about 20 MW in 0.5 (micro)s pulses, with a gain of 54 dB. Experiments for studying RF high-field effects on CVD diamond samples failed to show any evidence after more than 10 5 RF pulses of RF breakdown up to a tangential surface field strength of 153 MV/m; studies at higher fields were not possible due to a degradation in magnicon performance. A rebuild of the tube is underway at this writing. Computed performance for a dielectric-loaded rectangular accelerator structure (DLA) shows highly competitive properties, as compared with an existing all-metal structure. For example, comparisons were made of a DLA structure having two planar CVD diamond elements with a all-metal CERN structure HDS operating at 30

  9. Robust AIC with High Breakdown Scale Estimate

    Directory of Open Access Journals (Sweden)

    Shokrya Saleh

    2014-01-01

    Full Text Available Akaike Information Criterion (AIC based on least squares (LS regression minimizes the sum of the squared residuals; LS is sensitive to outlier observations. Alternative criterion, which is less sensitive to outlying observation, has been proposed; examples are robust AIC (RAIC, robust Mallows Cp (RCp, and robust Bayesian information criterion (RBIC. In this paper, we propose a robust AIC by replacing the scale estimate with a high breakdown point estimate of scale. The robustness of the proposed methods is studied through its influence function. We show that, the proposed robust AIC is effective in selecting accurate models in the presence of outliers and high leverage points, through simulated and real data examples.

  10. Comparative Studies of High-Gradient Rf and Dc Breakdowns

    CERN Document Server

    Kovermann, Jan Wilhelm; Wuensch, Walter

    2010-01-01

    The CLIC project is based on normal-conducting high-gradient accelerating structures with an average accelerating gradient of 100 MV/m. The maximum achievable gradient in these structures is limited by the breakdown phenomenon. The physics of breakdowns is not yet fully understood quantitatively. A full knowledge could have strong impact on the design, material choice and construction of rf structures. Therefore, understanding breakdowns has great importance to reaching a gradient of 100MV/m with an acceptable breakdown probability. This thesis addresses the physics underlying the breakdown effect, focusing on a comparison of breakdowns in rf structures and in a dc spark setup. The dc system is simpler, easier to benchmark against simulations, with a faster turnaround time, but the relationship to rf breakdown must be established. To do so, an experimental approach based on optical diagnostics and electrical measurements methods was made. Following an introduction into the CLIC project, a general theoretical ...

  11. High temperature polymer film dielectrics for aerospace power conditioning capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Venkat, Narayanan, E-mail: venkats3@gmail.co [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Dang, Thuy D. [Air Force Research Laboratory-Nanostructured and Biological Materials Branch (AFRL/RXBN) (United States); Bai Zongwu; McNier, Victor K. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); DeCerbo, Jennifer N. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States); Tsao, B.-H. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Stricker, Jeffery T. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States)

    2010-04-15

    Polymer dielectrics are the preferred materials of choice for capacitive energy-storage applications because of their potential for high dielectric breakdown strengths, low dissipation factors and good dielectric stability over a wide range of frequencies and temperatures, despite having inherently lower dielectric constants relative to ceramic dielectrics. They are also amenable to large area processing into films at a relatively lower cost. Air Force currently has a strong need for the development of compact capacitors which are thermally robust for operation in a variety of aerospace power conditioning applications. While such applications typically use polycarbonate (PC) dielectric films in wound capacitors for operation from -55 deg. C to 125 deg. C, future power electronic systems would require the use of polymer dielectrics that can reliably operate up to elevated temperatures in the range of 250-350 deg. C. The focus of this research is the generation and dielectric evaluation of metallized, thin free-standing films derived from high temperature polymer structures such as fluorinated polybenzoxazoles, post-functionalized fluorinated polyimides and fluorenyl polyesters incorporating diamond-like hydrocarbon units. The discussion is centered mainly on variable temperature dielectric measurements of film capacitance and dissipation factor and the effects of thermal cycling, up to a maximum temperature of 350 deg. C, on film dielectric performance. Initial studies clearly point to the dielectric stability of these films for high temperature power conditioning applications, as indicated by their relatively low temperature coefficient of capacitance (TCC) (approx2%) over the entire range of temperatures. Some of the films were also found to exhibit good dielectric breakdown strengths (up to 470 V/mum) and a film dissipation factor of the order of <0.003 (0.3%) at the frequency of interest (10 kHz) for the intended applications. The measured relative dielectric

  12. Highly Efficient Estimators of Multivariate Location with High Breakdown Point

    NARCIS (Netherlands)

    Lopuhaa, H.P.

    1991-01-01

    We propose an affine equivariant estimator of multivariate location that combines a high breakdown point and a bounded influence function with high asymptotic efficiency. This proposal is basically a location $M$-estimator based on the observations obtained after scaling with an affine equivariant

  13. Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

    Science.gov (United States)

    Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

    2018-04-01

    Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

  14. Breakdown of highly excited oxygen in a DC electric field

    International Nuclear Information System (INIS)

    Vagin, N.P.; Ionin, A.A.; Klimachev, Yu.M.; Sinitsin, D.V.; Yuryshev, N.N.; Deryugin, A.A.; Kochetov, I.V.; Napartovich, A.P.

    2000-01-01

    The breakdown of oxygen in a dc electric field is studied. A high concentration of oxygen molecules in the a 1 Δ g excited state is obtained in a purely chemical reactor. A decrease in the breakdown voltage at degrees of excitation exceeding 50% is observed. The theoretical decrement in the breakdown voltage obtained by solving the Boltzmann equation is in good agreement with the experimental data

  15. Subnanosecond breakdown in high-pressure gases

    Science.gov (United States)

    Naidis, George V.; Tarasenko, Victor F.; Babaeva, Natalia Yu; Lomaev, Mikhail I.

    2018-01-01

    Pulsed discharges in high-pressure gases are of considerable interest as sources of nonequilibrium plasma for various technological applications: pollution control, pumping of laser media, plasma-assisted combustion, etc. Recently, attention has been attracted to the use of subnanosecond voltage fronts, producing diffuse discharges with radii of several millimeters. Such plasma structures, similar to pulsed glow discharges, are of special interest for applications due to quasi-uniformity of plasma parameters in relatively large gas volumes. This review presents the results of experimental and computational study of subnanosecond diffuse discharge formation. A description of generators of short high-voltage pulses with subnanosecond fronts and of discharge setups is given. Diagnostic methods for the measurement of various discharge parameters with high temporal and spatial resolution are described. Obtained experimental data on plasma properties for a wide range of governing factors are discussed. A review of various theoretical approaches used for computational study of the dynamics and structure of fast ionization waves is given; the applicability of conventional fluid streamer models for simulation of subnanosecond ionization waves is discussed. Calculated spatial-temporal profiles of plasma parameters during streamer propagation are presented. The efficiency of subnanosecond discharges for the production of reactive species is evaluated. On the basis of the comparison of simulation results and experimental data the effects of various factors (voltage rise time, polarity, etc.) on discharge characteristics are revealed. The major physical phenomena governing the properties of subnanosecond breakdown are analyzed.

  16. Voltage-stabilised elastomers with increased relative permittivity and high electrical breakdown strength by means of phase separating binary copolymer blends of silicone elastomers

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Increased electrical breakdown strength and increased dielectric permittivity of silicone-based dielectric elastomers are achieved by means of the addition of so-called voltage-stabilisers prepared from PDMS–PPMS copolymers as well as PDMS–PEG copolymers in order to compensate for the negative...... effect of softness on electrical stability of silicone elastomers. The voltage-stabilised elastomer, incorporating a high-permittivity PDMS–PEG copolymer, possesses increased relative permittivity, high electrical breakdown strength, excellent network integrity and low dielectric loss and paves the way...

  17. Study of the physical mechanisms involved in the femtosecond laser optical breakdown of dielectric materials

    International Nuclear Information System (INIS)

    Mouskeftaras, Alexandros

    2013-01-01

    We have carried out detailed time resolved experimental studies of the mechanism of electron excitation-relaxation, when an ultrashort (60 fs -1 ps) laser (UV and IR) pulse interacts with a wide band gap dielectric material. The studies cover a range of different dielectric materials and the investigated regimes span from nondestructive ionization of the material at the low power end (∼TW/cm 2 ) to ablative domain at a higher laser power (∼10 TW/cm 2 ). This gives fundamental insight into the understanding of the laser damaging process taking place under our irradiation conditions. The usage of time-resolved spectral interferometry technique allows to directly measure the electron density of the irradiated material under different excitation conditions and hence leads to quantification of the process. The measurements, carried out at the optical breakdown threshold utilizing different pulse durations, raise questions regarding the usage of critical excitation density as a universal ablation criterion. A new criterion related to the exchanged energy is proposed. Additionally, the use of an experimental setup implementing a double pump pulse allows the identification of different excitation mechanisms taking place at time scales of the order of the pulse duration used. Electronic avalanche is observed in some materials (SiO 2 , NaCl) while this is not the case for others (Al 2 O 3 , MgO). These differences are discussed in detail. Next, we measure the energy spectrum of excited electrons with a complementary technique: the photoemission spectroscopy. These results allow us on one hand to show a crossed effect between the two 'pump' pulses and on the other hand to measure electron relaxation characteristic times, as a function of their kinetic energy. Finally, a morphological study of craters resulting from ablation in the case of a single pulse has been carried out for different irradiation parameters: number of shots, energy and pulse duration. This work has

  18. Muscle-like high-stress dielectric elastomer actuators with oil capsules

    International Nuclear Information System (INIS)

    La, Thanh-Giang; Lau, Gih-Keong; Shiau, Li-Lynn; Wei-Yee Tan, Adrian

    2014-01-01

    Despite being capable of generating large strains, dielectric elastomer actuators (DEAs) are short of strength. Often, they cannot produce enough stress or as much work as that achievable by human elbow muscles. Their maximum actuation capacity is limited by the electrical breakdown of dielectric elastomers. Often, failures of these soft actuators are pre-mature and localized at the weakest spot under high field and high stress. Localized breakdowns, such as electrical arcing, thermal runaway and punctures, could spread to ultimately cause rupture if they were not stopped. This work shows that dielectric oil immersion and self-clearable electrodes nibbed the buds of localized breakdowns from DEAs. Dielectric oil encapsulation in soft-membrane capsules was found to help the DEA sustain an ultra-high electrical breakdown field of 835 MVm −1 , which is 46% higher than the electrical breakdown strength of the dry DEA in air at 570 MV m −1 . Because of the increased apparent dielectric strength, this oil-capsuled DEA realizes a higher maximum isotonic work density of up to 31.51Jkg −1 , which is 43.8% higher than that realized by the DEA in air. Meanwhile, it produces higher maximum isometric stress of up to 1.05 MPa, which is 75% higher than that produced by the DEA in air. Such improved actuator performances are comparable to those achieved by human flexor muscles, which can exert up to 1.2 MPa during elbow flexion. This muscle-like, high-stress dielectric elastomeric actuation is very promising to drive future human-like robots. (paper)

  19. Determining the mode of high voltage breakdowns in vacuum devices

    International Nuclear Information System (INIS)

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-01-01

    Devices were constructed which were essentially vacuum diodes equipped with windows allowing observation of high voltage breakdowns. The waveform of the applied voltage was photographed, and the x-ray output was monitored to investigate electrical breakdown in these vacuum diodes. Results indicate that breakdowns may be divided into two types: (1) vacuum (interelectrode) breakdown - characterized by a diffuse moderately bright discharge, a relative slow and smooth voltage collapse, and a large burst of x-rays, and (2) surface (insulator) flashover - characterized by a bright discharge with a very bright filamentary core, a relatively fast and noisy voltage collapse and no x-ray burst. Useful information concerning the type of breakdown in a vacuum device can be obtained by monitoring the voltage (current) waveform and the x-ray output

  20. High thermal conductivity lossy dielectric using a multi layer configuration

    Science.gov (United States)

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-01-01

    Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

  1. Study of n-on-p sensors breakdown in presence of dielectrics placed on top surface

    CERN Document Server

    Affolder, Tony; The ATLAS collaboration

    2018-01-01

    The ATLAS Experiment at LHC will have several upgrade projects for High Luminosity LHC operations. Its tracking system will be replaced to cope with the higher interaction rate and radiation levels. The Strip portion of the tracker will be significantly expanded in radius and instrumented area to control the occupancy and momentum resolution. The strip modules are based on large-area n-on-p sensors with short strips, designed to work with the larger particle fluxes and radiation hardness requirements. The strip module design has readout flex circuit glued directly on top of the sensors’ active area to facilitate the assembly process and minimize the radiation length. Adhesive spread outward to the guard ring (GR) region is typically avoided to control the sensor breakdown. However, due to the large number of modules to be constructed, on the order of 20000, such occasions may in principle happen, depending on the process precision control. Therefore, the adhesive influence on the sensor breakdown and the br...

  2. Streamer discharge inception in a sub-breakdown electric field from a dielectric body with a frequency dependent dielectric permittivity

    NARCIS (Netherlands)

    A. A. Dubinova (Anna); C. Rutjes (Casper); U. M. Ebert (Ute)

    2015-01-01

    htmlabstractWe study positive streamer inception from the tip of an elongated ice particle. The dielectric permittivity of ice drops from 93 to 3 for electric fields changing on the millisecond timescale [1]. We demonstrate that this effect can be important on the nanosecond time scale of

  3. Multipactor Physics, Acceleration, and Breakdown in Dielectric-Loaded Accelerating Structures

    International Nuclear Information System (INIS)

    Fischer, Richard P.; Gold, Steven H.

    2016-01-01

    The objective of this 3-year program is to study the physics issues associated with rf acceleration in dielectric-loaded accelerating (DLA) structures, with a focus on the key issue of multipactor loading, which has been found to cause very significant rf power loss in DLA structures whenever the rf pulsewidth exceeds the multipactor risetime (~10 ns). The experiments are carried out in the X-band magnicon laboratory at the Naval Research Laboratory (NRL) in collaboration with Argonne National Laboratory (ANL) and Euclid Techlabs LLC, who develop the test structures with support from the DoE SBIR program. There are two main elements in the research program: (1) high-power tests of DLA structures using the magnicon output (20 MW @11.4 GHz), and (2) tests of electron acceleration in DLA structures using relativistic electrons from a compact X-band accelerator. The work during this period has focused on a study of the use of an axial magnetic field to suppress multipactor in DLA structures, with several new high power tests carried out at NRL, and on preparation of the accelerator for the electron acceleration experiments.

  4. Charge transport in polycrystalline alumina materials: application to the optimization of dielectric breakdown strength; Transport de charges dans les alumines polycristallines: application a l'optimisation de la rigidite dielectrique

    Energy Technology Data Exchange (ETDEWEB)

    Touzin, M.

    2005-12-15

    Dielectric breakdown constitutes an important limitation in the use of insulating materials under high-tension since it leads to the local fusion and the sublimation of material. The microstructure (average grain size, intergranular phase) has a great influence on the ability of material to resist this catastrophic phenomenon. Indeed, the interfaces between the various phases constitute potential sites of trapping for the charges. The optimization of the dielectric breakdown strength of a polycrystalline alumina sintered with a liquid phase passes necessarily through the control of the microstructural parameters. Thus, it is shown that by controlling the conditions of the process (rate of sintering aids, powder grain size and thermal cycle), it is possible to control the density (by the average grain size) but also the nature (by the crystallization or not of anorthite) of the grain boundaries. The study of the influence of these two parameters as well temperature on the properties of charge transport and storage was carried out by methods ICM and SEMME. The results, interpreted in light of the numerical simulation of the charge transport in bulk alumina sample during electron beam irradiation, allowed to highlight behaviors, and the corresponding microstructures, favourable to the dielectric breakdown resistance according to the considered temperature. Thus, at room temperature a high density of interfaces (low grain size and crystallized intergranular phase) makes it possible material to durably trap a great amount of charges, which leads to a high dielectric strength. On the other hand, at higher temperature, the presence of shallow traps (vitreous intergranular phase) supports the charge diffusion and makes it possible to delay breakdown. (author)

  5. Study of n-on-p sensors breakdown in presence of dielectrics placed on top surface

    CERN Document Server

    Helling, Cole Michael; The ATLAS collaboration

    2018-01-01

    The ATLAS Upgrade strip module design has readout flex circuits glued directly on top of the sensors’ active area to facilitate the assembly process and minimize the radiation length. The process requires radiation-hard adhesives compatible with the sensor technology. We report on the studies of the breakdown behavior with miniature versions of the prototype sensors, where candidate adhesives were placed in several locations on top of the sensor, including the strip area, guard ring region, and sensor edge. Thermal cycling tends to attenuate the observed cases of breakdown with glue on top of the guard ring. Glue reaching the sensor edge results in low breakdown voltage if it also covers AC- or DC- pads or bias ring openings. Glue placement on top of guard ring region was performed on a large-format sensor, with generally similar results to the miniature sensor tests, except for a large glue deposition, which resulted in a permanent reduction of the breakdown voltage. Post-irradiation measurements were perf...

  6. Low prepulse, high power density water dielectric switching

    International Nuclear Information System (INIS)

    Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

    1979-01-01

    Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

  7. On locally uniformly linearizable high breakdown location and scale functionals

    NARCIS (Netherlands)

    Davies, P.L.

    1998-01-01

    This article gives two constructions of a weighted mean which has a large domain, is affinely equivariant, has a locally high breakdown point and is locally uniformly linearizable. One construction is based on $M$-functionals with smooth defining $\\psi$- and $\\chi$ -functions which are used to

  8. Note: Tesla based pulse generator for electrical breakdown study of liquid dielectrics

    Science.gov (United States)

    Veda Prakash, G.; Kumar, R.; Patel, J.; Saurabh, K.; Shyam, A.

    2013-12-01

    In the process of studying charge holding capability and delay time for breakdown in liquids under nanosecond (ns) time scales, a Tesla based pulse generator has been developed. Pulse generator is a combination of Tesla transformer, pulse forming line, a fast closing switch, and test chamber. Use of Tesla transformer over conventional Marx generators makes the pulse generator very compact, cost effective, and requires less maintenance. The system has been designed and developed to deliver maximum output voltage of 300 kV and rise time of the order of tens of nanoseconds. The paper deals with the system design parameters, breakdown test procedure, and various experimental results. To validate the pulse generator performance, experimental results have been compared with PSPICE simulation software and are in good agreement with simulation results.

  9. Experimental Study of Magnetic Field Production and Dielectric Breakdown of Auto-Magnetizing Liners

    Science.gov (United States)

    Shipley, Gabriel; Awe, Thomas; Hutchinson, Trevor; Hutsel, Brian; Slutz, Stephen; Lamppa, Derek

    2017-10-01

    AutoMag liners premagnetize the fuel in MagLIF targets and provide enhanced x-ray diagnostic access and increased current delivery without requiring external field coils. AutoMag liners are composite liners made with discrete metallic helical conduction paths separated by insulating material. First, a low dI/dt ``foot'' current pulse (1 MA in 100 ns) premagnetizes the fuel. Next, a higher dI/dt pulse with larger induced electric field initiates breakdown on the composite liner's; surface, switching the current from helical to axial to implode the liner. Experiments on MYKONOS have tested the premagnetization and breakdown phases of AutoMag and demonstrate axial magnetic fields above 90 Tesla for a 550 kA peak current pulse. Electric fields of 17 MV/m have been generated before breakdown. AutoMag may enhance MagLIF performance by increasing the premagnetization strength significantly above 30 T, thus reducing thermal-conduction losses and mitigating anomalous diffusion of magnetic field out of hotter fuel regions, by, for example, the Nernst thermoelectric effect. This project was funded in part by Sandia's Laboratory Directed Research and Development Program (Projects No. 200169 and 195306).

  10. Numerical simulation of torus breakdown to chaos in an atmospheric-pressure dielectric barrier discharge

    International Nuclear Information System (INIS)

    Zhang, J.; Wang, Y. H.; Wang, D. Z.

    2013-01-01

    Understanding the routes to chaos occurring in atmospheric-pressure dielectric barrier discharge systems by changing controlling parameters is very important to predict and control the dynamical behaviors. In this paper, a route of a quasiperiodic torus to chaos via the strange nonchaotic attractor is observed in an atmospheric-pressure dielectric barrier discharge driven by triangle-wave voltage. By increasing the driving frequency, the discharge system first bifurcates to a quasiperiodic torus from a stable single periodic state, and then torus and phase-locking periodic state appear and disappear alternately. In the meantime, the torus becomes increasingly wrinkling and stretching, and gradually approaches a fractal structure with the nonpositive largest Lyapunov exponent, i.e., a strange nonchaotic attractor. After that, the discharge system enters into chaotic state. If the driving frequency is further increased, another well known route of period-doubling bifurcation to chaos is also observed

  11. Numerical simulation of torus breakdown to chaos in an atmospheric-pressure dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J.; Wang, Y. H.; Wang, D. Z. [Key Laboratory of Materials Modification by Laser, Electron, and Ion Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

    2013-08-15

    Understanding the routes to chaos occurring in atmospheric-pressure dielectric barrier discharge systems by changing controlling parameters is very important to predict and control the dynamical behaviors. In this paper, a route of a quasiperiodic torus to chaos via the strange nonchaotic attractor is observed in an atmospheric-pressure dielectric barrier discharge driven by triangle-wave voltage. By increasing the driving frequency, the discharge system first bifurcates to a quasiperiodic torus from a stable single periodic state, and then torus and phase-locking periodic state appear and disappear alternately. In the meantime, the torus becomes increasingly wrinkling and stretching, and gradually approaches a fractal structure with the nonpositive largest Lyapunov exponent, i.e., a strange nonchaotic attractor. After that, the discharge system enters into chaotic state. If the driving frequency is further increased, another well known route of period-doubling bifurcation to chaos is also observed.

  12. Cellulose Triacetate Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Jow, T. Richard

    1994-01-01

    Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

  13. Impulse breakdown of liquids

    CERN Document Server

    Ushakov, Vasily Y

    2007-01-01

    The book describes the main physical processes and phenomena in pulsed electric breakdown. The knowledge and the control of the electric breakdown of liquids is important not only for the insulation inside power systems but it is also used for the creation and information of high voltage and high current pulses. Such high-voltage micro- and nanosecond pulses find wide application in experimental physics, electro discharge technology, physics of dielectrics, radar detection and ranging, high-speed photography. The nature of charge carriers, mechanism of formation and evolution of the gas phase,

  14. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S. [Department of Material Science and Engineering, Rensselaer Polytechnic Institute, 110 8th street, Troy, New York 12180 (United States)

    2016-08-07

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  15. A simple method for reducing inevitable dielectric loss in high-permittivity dielectric elastomers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Mazurek, Piotr Stanislaw

    2016-01-01

    elastomer matrix, with high dielectric permittivity and a low Young's modulus, aligned with no loss of mechanical stability, was prepared through the use of commercially available chloropropyl-functional silicone oil mixed into a tough commercial liquid silicone rubber silicone elastomer. The addition...... also decreased the dielectric losses of an elastomer containing dielectric permittivity-enhancing TiO2 fillers. Commercially available chloropropyl-functional silicone oil thus constitutes a facile method for improved silicone DEs, with very low dielectric losses.......Commercial viability of dielectric elastomers (DEs) is currently limited by a few obstacles, including high driving voltages (in the kV range). Driving voltage can be lowered by either decreasing the Young's modulus or increasing the dielectric permittivity of silicone elastomers, or a combination...

  16. Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics.

    Science.gov (United States)

    Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

    2016-09-20

    The dielectric response of a material is central to numerous processes spanning the fields of chemistry, materials science, biology, and physics. Despite this broad importance across these disciplines, describing the dielectric environment of a molecular system at the level of first-principles theory and computation remains a great challenge and is of importance to understand the behavior of existing systems as well as to guide the design and synthetic realization of new ones. Furthermore, with recent advances in molecular electronics, nanotechnology, and molecular biology, it has become necessary to predict the dielectric properties of molecular systems that are often difficult or impossible to measure experimentally. In these scenarios, it is would be highly desirable to be able to determine dielectric response through efficient, accurate, and chemically informative calculations. A good example of where theoretical modeling of dielectric response would be valuable is in the development of high-capacitance organic gate dielectrics for unconventional electronics such as those that could be fabricated by high-throughput printing techniques. Gate dielectrics are fundamental components of all transistor-based logic circuitry, and the combination high dielectric constant and nanoscopic thickness (i.e., high capacitance) is essential to achieving high switching speeds and low power consumption. Molecule-based dielectrics offer the promise of cheap, flexible, and mass producible electronics when used in conjunction with unconventional organic or inorganic semiconducting materials to fabricate organic field effect transistors (OFETs). The molecular dielectrics developed to date typically have limited dielectric response, which results in low capacitances, translating into poor performance of the resulting OFETs. Furthermore, the development of better performing dielectric materials has been hindered by the current highly empirical and labor-intensive pace of synthetic

  17. Mechanism of the free charge carrier generation in the dielectric breakdown

    Science.gov (United States)

    Rahim, N. A. A.; Ranom, R.; Zainuddin, H.

    2017-12-01

    Many studies have been conducted to investigate the effect of environmental, mechanical and electrical stresses on insulator. However, studies on physical process of discharge phenomenon, leading to the breakdown of the insulator surface are lacking and difficult to comprehend. Therefore, this paper analysed charge carrier generation mechanism that can cause free charge carrier generation, leading toward surface discharge development. Besides, this paper developed a model of surface discharge based on the charge generation mechanism on the outdoor insulator. Nernst’s Planck theory was used in order to model the behaviour of the charge carriers while Poisson’s equation was used to determine the distribution of electric field on insulator surface. In the modelling of surface discharge on the outdoor insulator, electric field dependent molecular ionization was used as the charge generation mechanism. A mathematical model of the surface discharge was solved using method of line technique (MOL). The result from the mathematical model showed that the behaviour of net space charge density was correlated with the electric field distribution.

  18. IR Laser-induced Ablation of Ag in Dielectric Breakdown of Gaseous Hydrocarbons: Simultaneous Occurrence of Metastable HCP and Stable FCC Ag Nanostructures in C:H Shell

    Czech Academy of Sciences Publication Activity Database

    Urbanová, Markéta; Pokorná, Dana; Bakardjieva, Snejana; Šubrt, Jan; Bastl, Zdeněk; Bezdička, Petr; Pola, Josef

    2010-01-01

    Roč. 213, 2-3 (2010), s. 114-122 ISSN 1010-6030 R&D Projects: GA AV ČR IAA400720619; GA MŠk LC523 Institutional research plan: CEZ:AV0Z40720504; CEZ:AV0Z40320502; CEZ:AV0Z40400503 Keywords : ir laser * dielectric breakdown * ablation Subject RIV: CH - Nuclear ; Quantum Chemistry Impact factor: 2.243, year: 2010

  19. Water-dielectric-breakdown relation for the design of large-area multimegavolt pulsed-power systems

    Directory of Open Access Journals (Sweden)

    W. A. Stygar

    2006-07-01

    Full Text Available We have developed an empirical electrical-breakdown relation that can be used to design large-area water-insulated pulsed-power systems. Such systems often form an integral part of multiterawatt pulsed-power accelerators, and may be incorporated in future petawatt-class machines. We find that complete dielectric failure is likely to occur in water between a significantly field-enhanced anode and a less-enhanced cathode when E_{p}τ_{eff}^{0.330±0.026}=0.135±0.009. In this expression E_{p}≡V_{p}/d is the peak value in time of the spatially averaged electric field between the anode and cathode (in MV/cm, V_{p} is the peak voltage across the electrodes, d is the distance between the anode and cathode, and τ_{eff} is the temporal width (in μs of the voltage pulse at 63% of peak. This relation is based on 25 measurements for which 1≤V_{p}≤4.10   MV, 1.25≤d≤22   cm, and 0.011≤τ_{eff}≤0.6   μs. The normalized standard deviation of the differences between these measurements and the associated predictions of the relation is 12%.

  20. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  1. Determining the mode of high voltage breakdowns in vacuum devices

    International Nuclear Information System (INIS)

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-01-01

    High voltage breakdowns (HVBs) occur in many vacuum devices. It frequently is of great practical interest to know the type (or mode) of such HVB's, since this can indicate weak points in the device. Post-mortems can sometimes be helpful, but it would be quite desirable to have a technique which would allow the HVB mode to be determined in an operating device. Photography can be quite helpful, but unfortunately many devices do not permit optical access to the region of interest. However, the idea of using photography in conjunction with other diagnostic techniques to establish the validity of these techniques seemed promising, since these techniques could then be used to determine the mode of HVBs in opaque devices. A literature search indicates that promising techniques are to measure the voltage applied to the device (or the current through the device) and also to look for x-rays generated by the device during an HVB

  2. A dielectric approach to high temperature superconductivity

    International Nuclear Information System (INIS)

    Mahanty, J.; Das, M.P.

    1989-01-01

    The dielectric response of an electron-ion system to the presence of a pair of charges is investigated. From the nature of the dielectric function, it is shown that a strong attractive pair formation is possible depending on the dispersion of the ion branches. The latter brings a reduction to the sound velocity which is used as a criterion for the superconductivity. By solving the BCS equation with the above dielectric function, we obtain a reasonable value of T/sub c/. 17 refs., 1 fig

  3. Numerical modeling of post current-zero dielectric breakdown in a low voltage circuit breaker

    Science.gov (United States)

    Thenkarai Narayanan, Venkat raman

    Oral delivery of macromolecular therapeutics has remained a challenge. Various factors govern principles of oral absorption, including solubility, tissue permeability, stability and dynamics of the gastrointestinal environment. Developing a macromolecular drug carrier for poorly bioavailable drugs is highly desirable. Dendritic polymers are attractive drug delivery vehicles because of their multifunctional surface groups, globular conformation, branched architecture, low poly dispersity and hydrophilic nature. They also offer traditional benefits of macromolecular systems such as extended plasma residence time and reduced systemic toxicity. Developing a poly(amido amine) (PAMAM) dendrimer-based oral drug delivery vehicle is the long-term goal of this research. PAMAM dendrimers can offer advantages in terms of improving solubility and permeability that can ultimately enhance oral absorption of poorly bioavailable drugs. In this dissertation, first the safety and maximum tolerated dose of six different PAMAM dendrimers was studied after oral and systemic administration. Surface charge of these dendrimers significantly influenced their toxicity profile in vivo with cationic systems proving to be more toxic than anionic systems. The inherent permeability of native anionic dendrimers was then evaluated in a mouse model to assess their potential in oral drug delivery. Results suggested that anionic G6.5 dendrimers exhibited appreciable bioavailability with partial degradation observed under in vivo conditions. Subsequently, camptothecin, a model drug used for the treatment of colorectal carcinoma, was attached to PAMAM dendrimers. Antitumor activity revealed that these conjugates were effective in inhibiting growth of cancer cells in vitro. Preliminary efficacy studies conducted in xenograft tumor models also indicated that dendrimer-drug conjugates have potential for oral chemotherapy. Further detailed in vivo studies are needed to demonstrate the utility of PAMAM

  4. Recent Progress on Ferroelectric Polymer-Based Nanocomposites for High Energy Density Capacitors: Synthesis, Dielectric Properties, and Future Aspects.

    Science.gov (United States)

    Prateek; Thakur, Vijay Kumar; Gupta, Raju Kumar

    2016-04-13

    Dielectric polymer nanocomposites are rapidly emerging as novel materials for a number of advanced engineering applications. In this Review, we present a comprehensive review of the use of ferroelectric polymers, especially PVDF and PVDF-based copolymers/blends as potential components in dielectric nanocomposite materials for high energy density capacitor applications. Various parameters like dielectric constant, dielectric loss, breakdown strength, energy density, and flexibility of the polymer nanocomposites have been thoroughly investigated. Fillers with different shapes have been found to cause significant variation in the physical and electrical properties. Generally, one-dimensional and two-dimensional nanofillers with large aspect ratios provide enhanced flexibility versus zero-dimensional fillers. Surface modification of nanomaterials as well as polymers adds flavor to the dielectric properties of the resulting nanocomposites. Nowadays, three-phase nanocomposites with either combination of fillers or polymer matrix help in further improving the dielectric properties as compared to two-phase nanocomposites. Recent research has been focused on altering the dielectric properties of different materials while also maintaining their superior flexibility. Flexible polymer nanocomposites are the best candidates for application in various fields. However, certain challenges still present, which can be solved only by extensive research in this field.

  5. Streamwise Fluctuations of Vortex Breakdown at High Reynolds Numbers

    National Research Council Canada - National Science Library

    Connelly, Jonathan S

    2006-01-01

    This thesis deals with the characterization of the dependence on the flow geometry of the stream wise fluctuations of the stagnation point of vortex breakdown in axisymmetric tubes and over delta wing aircraft...

  6. Ionizing potential waves and high-voltage breakdown streamers.

    Science.gov (United States)

    Albright, N. W.; Tidman, D. A.

    1972-01-01

    The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.

  7. Experimental study of DC vacuum breakdown and application to high-gradient accelerating structures for CLIC

    CERN Document Server

    Shipman, Nicholas; Jones, Roger

    2016-01-01

    The compact linear collider (CLIC) is a leading candidate for the next generation high energy linear collider. As any breakdown would result in a partial or full loss of luminosity for the pulse in which it occurs, obtaining a low breakdown rate in CLIC accelerating structures is a critical requirement for the successful operation of the proposed collider. This thesis presents investigations into the breakdown phenomenon primarily in the low breakdown rate regime of interest to CLIC, performed using the CERN DC spark systems between 2011 and 2014. The design, construction and commissioning of several new pieces of hardware, as well as the development of improved techniques to measuring the inter-electrode gap distance are detailed. These hardware improvements were fundamental in enabling the exciting new experiments mentioned below, which in turn have provided significant additional insight into the phenomenon of breakdown. Experiments were performed to measure fundamental parameters of individual breakdowns...

  8. Experimental research for vacuum gap breakdown in high voltage multi-pulse

    International Nuclear Information System (INIS)

    Huang Ziping; He Jialong; Chen Sifu; Deng Jianjun; Wang Liping

    2008-01-01

    Base on the breakdown theory of vacuum gaps, experiments have been done to find out the breakdown electric field intensities in high voltage single-and triple-pulse for 26 vacuum gaps with different shapes. The experimental results match up to the theory and confirm the effect of the pulse-number increase on the breakdown electric field intensity. The key point to decide the macroscopical breakdown electric field intensity of a vacuum gap has been pointed out with some advises about the design of a multi-pulse linear inductive accelerator's accelerate gap. (authors)

  9. Plasma polymerized high energy density dielectric films for capacitors

    Science.gov (United States)

    Yamagishi, F. G.

    1983-01-01

    High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

  10. High breakdown-strength composites from liquid silicone rubbers

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Zakaria, Shamsul Bin; Yu, Liyun

    2014-01-01

    In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially...

  11. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, October 1, 1977--March 31, 1978. [Summaries of research activities at Oak Ridge National Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Christophorou, L.G.; James, D.R.; Pai, R.Y.; Mathis, R.A.; Sauers, I.; Pace, M.O.; Bouldin, D.W.; Christodoulides, A.A.; Chan, C.C.

    1978-06-01

    The work on gas mixtures is focused on combinations of gases consisting of strongly electron-attaching components and one or more electron slowing-down components. Hypotheses based on the positions of electronically excited states are borne out experimentally in the low pressure (<1000 torr) breakdown measurements. The high pressure work shows dramatically the importance of the electron scattering cross section on breakdown strength by comparing Ar with Ne as single gases and in mixtures with SF/sub 6/. Although the ionization cross section for Ar is very much greater than that for Ne, Ar is a superior buffer gas. A theoretical discussion is given which describes the relation between the dielectric strength of a gas to its physical parameters including the electron attachment cross section, the ionization cross section, the ionization potential, and the electron energy distribution function. Also discussed is the importance of perfluorination in hydrocarbons to effect an increase in the electron attachment cross section and electron affinity and a decrease in the ionization cross section, and hence an increase in dielectric strength. Attachment rates were measured as a function of the mean electron energy for a comprehensive list of perfluorocarbons. Breakdown voltages were determined for SF/sub 6/ and for SF/sub 6/ (20%)/N/sub 2/(80%) as a function of temperature from -15/sup 0/C to 85/sup 0/C. Environmental aspects of gas dielectrics pertaining to gas decomposition and toxicity were studied.

  12. Highly oxidising fluids generated during serpentinite breakdown in subduction zones.

    Science.gov (United States)

    Debret, B; Sverjensky, D A

    2017-09-04

    Subduction zones facilitate chemical exchanges between Earth's deep interior and volcanism that affects habitability of the surface environment. Lavas erupted at subduction zones are oxidized and release volatile species. These features may reflect a modification of the oxidation state of the sub-arc mantle by hydrous, oxidizing sulfate and/or carbonate-bearing fluids derived from subducting slabs. But the reason that the fluids are oxidizing has been unclear. Here we use theoretical chemical mass transfer calculations to predict the redox state of fluids generated during serpentinite dehydration. Specifically, the breakdown of antigorite to olivine, enstatite, and chlorite generates fluids with high oxygen fugacities, close to the hematite-magnetite buffer, that can contain significant amounts of sulfate. The migration of these fluids from the slab to the mantle wedge could therefore provide the oxidized source for the genesis of primary arc magmas that release gases to the atmosphere during volcanism. Our results also show that the evolution of oxygen fugacity in serpentinite during subduction is sensitive to the amount of sulfides and potentially metal alloys in bulk rock, possibly producing redox heterogeneities in subducting slabs.

  13. Super soft silicone elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Hvilsted, Søren

    2015-01-01

    Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young’s modulus and increasing the dielectric permittivity of silicone...... elastomers. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. New soft elastomer matrices with high dielectric permittivity and low Young’s modulus, with no loss of mechanical stability, were prepared by two different...... approaches using chloropropyl-functional silicone polymers. The first approach was based on synthesised chloropropyl-functional copolymers that were cross-linkable and thereby formed the basis of new silicone networks with high dielectric permittivity (e.g. a 43% increase). These networks were soft without...

  14. Functional silicone copolymers and elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

    Dielectric elastomers (DEs) are a new and promising transducer technology and are often referred to as ‘artificial muscles’, due to their ability to undergo large deformations when stimulated by electric fields. DEs consist of a soft and thin elastomeric film sandwiched between compliant electrodes......, thereby forming a capacitor [1]. Silicone elastomers are one of the most used materials for DEs due to their high efficiency, fast response times and low viscous losses. The major disadvantage of silicone elastomers is that they possess relatively low dielectric permittivity, which means that a high...... electrical field is necessary to operate the DE. The necessary electrical field can be lowered by creating silicone elastomers with higher dielectric permittivity, i.e. with a higher energy density.The aim of this work is to create new and improved silicone elastomers with high dielectric permittivity...

  15. Blackbody Emission from Laser Breakdown in High-Pressure Gases

    Science.gov (United States)

    Bataller, A.; Plateau, G. R.; Kappus, B.; Putterman, S.

    2014-08-01

    Laser induced breakdown of pressurized gases is used to generate plasmas under conditions where the atomic density and temperature are similar to those found in sonoluminescing bubbles. Calibrated streak spectroscopy reveals that a blackbody persists well after the exciting femtosecond laser pulse has turned off. Deviation from Saha's equation of state and an accompanying large reduction in ionization potential are observed at unexpectedly low atomic densities—in parallel with sonoluminescence. In laser breakdown, energy input proceeds via excitation of electrons whereas in sonoluminescence it is initiated via the atoms. The similar responses indicate that these systems are revealing the thermodynamics and transport of a strongly coupled plasma.

  16. Spectrographic temperature measurement of a high power breakdown arc in a high pressure gas switch

    Energy Technology Data Exchange (ETDEWEB)

    Yeckel, Christopher; Curry, Randy [Department of Computer and Electrical Engineering, Center for Physical and Power Electronics, University of Missouri--Columbia, Columbia, Missouri 65211 (United States)

    2011-09-15

    A procedure for obtaining an approximate temperature value of conducting plasma generated during self-break closure of a RIMFIRE gas switch is described. The plasma is in the form of a breakdown arc which conducts approximately 12 kJ of energy in 1 {mu}s. A spectrographic analysis of the trigger-section of the 6-MV RIMFIRE laser triggered gas switch used in Sandia National Laboratory's ''Z-Machine'' has been made. It is assumed that the breakdown plasma has sufficiently approached local thermodynamic equilibrium allowing a black-body temperature model to be applied. This model allows the plasma temperature and radiated power to be approximated. The gas dielectric used in these tests was pressurized SF{sub 6}. The electrode gap is set at 4.59 cm for each test. The electrode material is stainless steel and insulator material is poly(methyl methacrylate). A spectrum range from 220 to 550 nanometers has been observed and calibrated using two spectral irradiance lamps and three spectrograph gratings. The approximate plasma temperature is reported.

  17. Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

    Science.gov (United States)

    Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

    2014-02-01

    High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

  18. High-gradient breakdown studies of an X-band Compact Linear Collider prototype structure

    Directory of Open Access Journals (Sweden)

    Xiaowei Wu

    2017-05-01

    Full Text Available A Compact Linear Collider prototype traveling-wave accelerator structure fabricated at Tsinghua University was recently high-gradient tested at the High Energy Accelerator Research Organization (KEK. This X-band structure showed good high-gradient performance of up to 100  MV/m and obtained a breakdown rate of 1.27×10^{−8} per pulse per meter at a pulse length of 250 ns. This performance was similar to that of previous structures tested at KEK and the test facility at the European Organization for Nuclear Research (CERN, thereby validating the assembly and bonding of the fabricated structure. Phenomena related to vacuum breakdown were investigated and are discussed in the present study. Evaluation of the breakdown timing revealed a special type of breakdown occurring in the immediately succeeding pulse after a usual breakdown. These breakdowns tended to occur at the beginning of the rf pulse, whereas usual breakdowns were uniformly distributed in the rf pulse. The high-gradient test was conducted under the international collaboration research program among Tsinghua University, CERN, and KEK.

  19. Statistics of vacuum breakdown in the high-gradient and low-rate regime

    Science.gov (United States)

    Wuensch, Walter; Degiovanni, Alberto; Calatroni, Sergio; Korsbäck, Anders; Djurabekova, Flyura; Rajamäki, Robin; Giner-Navarro, Jorge

    2017-01-01

    In an increasing number of high-gradient linear accelerator applications, accelerating structures must operate with both high surface electric fields and low breakdown rates. Understanding the statistical properties of breakdown occurrence in such a regime is of practical importance for optimizing accelerator conditioning and operation algorithms, as well as of interest for efforts to understand the physical processes which underlie the breakdown phenomenon. Experimental data of breakdown has been collected in two distinct high-gradient experimental set-ups: A prototype linear accelerating structure operated in the Compact Linear Collider Xbox 12 GHz test stands, and a parallel plate electrode system operated with pulsed DC in the kV range. Collected data is presented, analyzed and compared. The two systems show similar, distinctive, two-part distributions of number of pulses between breakdowns, with each part corresponding to a specific, constant event rate. The correlation between distance and number of pulses between breakdown indicates that the two parts of the distribution, and their corresponding event rates, represent independent primary and induced follow-up breakdowns. The similarity of results from pulsed DC to 12 GHz rf indicates a similar vacuum arc triggering mechanism over the range of conditions covered by the experiments.

  20. Statistics of vacuum breakdown in the high-gradient and low-rate regime

    Directory of Open Access Journals (Sweden)

    Walter Wuensch

    2017-01-01

    Full Text Available In an increasing number of high-gradient linear accelerator applications, accelerating structures must operate with both high surface electric fields and low breakdown rates. Understanding the statistical properties of breakdown occurrence in such a regime is of practical importance for optimizing accelerator conditioning and operation algorithms, as well as of interest for efforts to understand the physical processes which underlie the breakdown phenomenon. Experimental data of breakdown has been collected in two distinct high-gradient experimental set-ups: A prototype linear accelerating structure operated in the Compact Linear Collider Xbox 12 GHz test stands, and a parallel plate electrode system operated with pulsed DC in the kV range. Collected data is presented, analyzed and compared. The two systems show similar, distinctive, two-part distributions of number of pulses between breakdowns, with each part corresponding to a specific, constant event rate. The correlation between distance and number of pulses between breakdown indicates that the two parts of the distribution, and their corresponding event rates, represent independent primary and induced follow-up breakdowns. The similarity of results from pulsed DC to 12 GHz rf indicates a similar vacuum arc triggering mechanism over the range of conditions covered by the experiments.

  1. Characterization and Control of Vortex Breakdown over a Delta Wing at High Angles of Attack

    National Research Council Canada - National Science Library

    Mitchell, Anthony

    2000-01-01

    .... The goal of this research is the control of leading-edge vortex breakdown by open-loop, along-the-core blowing near the apex of a delta wing to improve lift and maneuverability at high angles of attack...

  2. Dielectric strength of SiO2 in a CMOS transistor structure

    International Nuclear Information System (INIS)

    Soden, J.M.

    1979-01-01

    The distribution of experimental dielectric strengths of SiO 2 gate dielectric in a CMOS transistor structure is shown to be composed of a primary, statistically-normal distribution of high dielectric strength and a secondary distribution spread through the lower dielectric strength region. The dielectric strength was not significantly affected by high level (1 x 10 6 RADS (Si)) gamma radiation or high temperature (200 0 C) stress. The primary distribution breakdowns occurred at topographical edges, mainly at the gate/field oxide interface, and the secondary distribution breakdowns occurred at random locations in the central region of the gate

  3. High thermal conductivity lossy dielectric using co-densified multilayer configuration

    Science.gov (United States)

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-06-17

    Systems and methods are described for loss dielectrics. A method of manufacturing a lossy dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer and then densifying together. The systems and methods provide advantages because the lossy dielectrics are less costly and more environmentally friendly than the available alternatives.

  4. Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Xiao-Yu Tang

    2015-01-01

    Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

  5. High-speed photography and holography of laser induced breakdown in liquids

    International Nuclear Information System (INIS)

    Lauterborn, W.

    1979-01-01

    Optical breakdown phenomena in liquids due to focused ruby laser light are investigated by high-speed photography and holography. Special attention is given the dynamics of the cavities produced in the liquid upon breakdown as they can be expected to become a powerful research tool in cavitation physics. To this end the production of three-dimensional breakdown configurations would be desirable as well as their investigation by high-speed holographic means. Both problems are presently under study. To achieve multiple breakdown at preselected points in the liquid a grating-lens assembly and digital holograms in photoresist are used. To film the motion of the cavities high-speed holocinematographic methods are developed. By now four to eight holograms can be taken at a rate of 10 to 20 kHz. (author)

  6. Development and characterization of high temperature, high energy density dielectric materials to establish routes towards power electronics capacitive devices

    Science.gov (United States)

    Shay, Dennis P.

    The maximum electrostatic energy density of a capacitor is a function of the relative permittivity (epsilonr) and the square of the dielectric breakdown strength (Eb). Currently, state-of-the art high temperature (>200 °C), SiC-based power electronics utilize CaZrO3-rich NP0/C0G-type capacitors, which have low relative permittivities of epsilonr ˜ 30-40, high breakdown strengths (> 1.0 MV/cm), and are chosen for their minimal change in energy storage with temperature. However, with operating temperatures exceeding the rated temperatures for such capacitors, there is an opportunity to develop new dielectric ceramics having higher energy densities and volumetric efficiencies at high temperatures (>200 °C) by utilizing higher permittivity dielectrics while maintaining high breakdown strengths via doping. The solid solution behavior of was characterized in order to determine the optimal composition for balancing permittivity and dielectric breakdown strength to obtain high energy densities at elevated temperatures. Characterization by X-ray diffraction (XRD) showed Vegard's law behavior across the solid solution with minimal 2nd phases. To determine a Ca(TixZr1-x)O3 composition that will also minimize electronic or band conduction, the optical properties of the Ca(TixZr1-x)O3 solid solution were investigated to identify a composition on the CaTiO3 - rich end of the solid solution with a large band gap. Both ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis) and spectroscopic ellipsometry were utilized to determine the Ca(TixZr1-x)O3 band gaps and optical properties. The resistivity at 250 °C scaled with the band gap energy across the solid solution. Comparing the current-voltage (I--V) behavior at 250 °C for Ca(Tix-yMnyZr0.2)O3 (CTZ + Mn) where x = 0.7, 0.8, 0.9, and y = 0.005, it was found that the Ca(Ti 0.795Mn0.005Zr0.2)O3 composition showed the lowest current density and a decrease in current density of 5 orders of magnitude compared to the un

  7. Disclosed dielectric and electromechanical properties of hydrogenated nitrile–butadiene dielectric elastomer

    International Nuclear Information System (INIS)

    Yang, Dan; Tian, Ming; Dong, Yingchao; Liu, Haoliang; Yu, Yingchun; Zhang, Liqun

    2012-01-01

    This paper presents a comprehensive study of the effects of acrylonitrile content, crosslink density and plasticization on the dielectric and electromechanical performances of hydrogenated nitrile–butadiene dielectric elastomer. It was found that by increasing the acrylonitrile content of hydrogenated nitrile–butadiene dielectric elastomer, the dielectric constant will be improved accompanied with a sharp decrease of electrical breakdown strength leading to a small actuated strain. At a fixed electric field, a high crosslink density increased the elastic modulus of dielectric elastomer, but it also enhanced the electrical breakdown strength leading to a high actuated strain. Adding a plasticizer into the dielectric elastomer decreased the dielectric constant and electrical breakdown strength slightly, but reduced the elastic modulus sharply, which was beneficial for obtaining a large strain at low electric field from the dielectric elastomer. The largest actuated strain of 22% at an electric field of 30 kV mm −1 without any prestrain was obtained. Moreover, the hydrogenated nitrile–butadiene dielectric actuator showed good history dependence. This proposed material has great potential to be an excellent dielectric elastomer. (paper)

  8. High-pressure cell for simultaneous dielectric and neutron spectroscopy

    DEFF Research Database (Denmark)

    Sanz, Alejandro; Hansen, Henriette Wase; Jakobsen, Bo

    2018-01-01

    In this article, we report on the design, manufacture, and testing of a high-pressure cell for simultaneous dielectric and neutron spectroscopy. This cell is a unique tool for studying dynamics on different time scales, from kilo- to picoseconds, covering universal features such as the α relaxation......, a cylindrical capacitor is positioned within the bore of the high-pressure container. The capacitor consists of two concentric electrodes separated by insulating spacers. The performance of this setup has been successfully verified by collecting simultaneous dielectric and neutron spectroscopy data...

  9. The Nanophysics of Electron Emission and Breakdown for High Power Microwave Source

    Science.gov (United States)

    2009-12-21

    coaxial anode/collector. 3.1.2. Formation of  plasma  filaments during w‐band microwave breakdown  Regular, two-dimensional plasma ...Injection Gun ," IEEE Trans. Elec. Devices (May, 2005). 2. Booske, John H., “ Plasma physics and related challenges of millimeter-to-terahertz and...high power microwave (HPM) device technologies by establishing new physical understanding of electron emission/absorption and plasma breakdown

  10. High Dielectric Low Loss Transparent Glass Material Based Dielectric Resonator Antenna with Wide Bandwidth Operation

    Science.gov (United States)

    Mehmood, Arshad; Zheng, Yuliang; Braun, Hubertus; Hovhannisyan, Martun; Letz, Martin; Jakoby, Rolf

    2015-01-01

    This paper presents the application of new high permittivity and low loss glass material for antennas. This glass material is transparent. A very simple rectangular dielectric resonator antenna is designed first with a simple microstrip feeding line. In order to widen the bandwidth, the feed of the design is modified by forming a T-shaped feeding. This new design enhanced the bandwidth range to cover the WLAN 5 GHz band completely. The dielectric resonator antenna cut into precise dimensions is placed on the modified microstrip feed line. The design is simple and easy to manufacture and also very compact in size of only 36 × 28 mm. A -10 dB impedance bandwidth of 18% has been achieved, which covers the frequency range from 5.15 GHz to 5.95 GHz. Simulations of the measured return loss and radiation patterns are presented and discussed.

  11. Possible Lead Free Nanocomposite Dielectrics for High Energy Storage Applications

    Directory of Open Access Journals (Sweden)

    Srinivas Kurpati

    2017-03-01

    Full Text Available There is an increasing demand to improve the energy density of dielectric capacitors for satisfying the next generation material systems. One effective approach is to embed high dielectric constant inclusions such as lead zirconia titanate in polymer matrix. However, with the increasing concerns on environmental safety and biocompatibility, the need to expel lead (Pb from modern electronics has been receiving more attention. Using high aspect ratio dielectric inclusions such as nanowires could lead to further enhancement of energy density. Therefore, the present brief review work focuses on the feasibility of development of a lead-free nanowire reinforced polymer matrix capacitor for energy storage application. It is expected that Lead-free sodium Niobate nanowires (NaNbO3 and Boron nitride will be a future candidate to be synthesized using simple hydrothermal method, followed by mixing them with polyvinylidene fluoride (PVDF/ divinyl tetramethyl disiloxanebis (benzocyclobutene matrix using a solution-casting method for Nanocomposites fabrication. The energy density of NaNbO3 and BN based composites are also be compared with that of lead-containing (PbTiO3/PVDF Nano composites to show the feasibility of replacing lead-containing materials from high-energy density dielectric capacitors. Further, this paper explores the feasibility of these materials for space applications because of high energy storage capacity, more flexibility and high operating temperatures. This paper is very much useful researchers who would like to work on polymer nanocomposites for high energy storage applications.

  12. Dielectric and acoustical high frequency characterisation of PZT thin films

    International Nuclear Information System (INIS)

    Conde, Janine; Muralt, Paul

    2010-01-01

    Pb(Zr, Ti)O 3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  13. Dielectric and acoustical high frequency characterisation of PZT thin films

    Science.gov (United States)

    Conde, Janine; Muralt, Paul

    2010-02-01

    Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  14. Interpenetrated polymer networks based on commercial silicone elastomers and ionic networks with high dielectric permittivity and self-healing properties

    DEFF Research Database (Denmark)

    Ogliani, Elisa; Yu, Liyun; Skov, Anne Ladegaard

    the applicability. One method used to avoid this limitation is to increase the dielectric permittivity of the material in order to improve the actuation response at a given field. Recently, interpenetrating polymer networks (IPNs) based on covalently cross-linked commercial silicone elastomers and ionic networks...... from amino- and carboxylic acid- functional silicones have been designed[2] (Figure 1). This novel system provides both the mechanical stability and the high breakdown strength given by the silicone part of the IPNs and the high permittivity and the softening effect of the ionic network. Thus......,1 Hz), and the commercial elastomers RT625 and LR3043/30 provide thebest viscoelastic properties to the systems, since they maintain low viscous losses upon addition of ionic network. The values ofthe breakdown strength in all cases remain higher than that of the reference pure PDMS network (ranging...

  15. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  16. Breakdown in ZnO Varistors by High Power Electrical Pulses; TOPICAL

    International Nuclear Information System (INIS)

    PIKE, GORDON E.

    2001-01-01

    This report documents an investigation of irreversible electrical breakdown in ZnO varistors due to short pulses of high electric field and current density. For those varistors that suffer breakdown, there is a monotonic, pulse-by-pulse degradation in the switching electric field. The electrical and structural characteristics of varistors during and after breakdown are described qualitatively and quantitatively. Once breakdown is nucleated, the degradation typically follows a well-defined relationship between the number of post-initiation pulses and the degraded switching voltage. In some cases the degraded varistor has a remnant 20(micro)m diameter hollow track showing strong evidence of once-molten ZnO. A model is developed for both electrical and thermal effects during high energy pulsing. The breakdown is assumed to start at one electrode and advance towards the other electrode as a thin filament of conductive material that grows incrementally with each successive pulse. The model is partially validated by experiments in which the varistor rod is cut at several different lengths from the electrode. Invariably one section of the cut varistor has a switching field that is not degraded while the other section(s) are heavily degraded. Based on the experiments and models of behavior during breakdown, some speculations about the nature of the nucleating mechanism are offered in the last section

  17. New perovskite-related oxides having high dielectric constant ...

    Indian Academy of Sciences (India)

    Unknown

    static and dynamic random access memories, the static dielectric constant of the material. ¶Dedicated to .... 1100°C. It is also observed from the SEM pictures that the materials are highly dense .... Both these oxides merit attention for their.

  18. Relation between microstructure and dielectric breakdown in the case of aluminous ceramics (SEMM method); Comportement d'alumines face a l'injection de charges. Relation microstructure - claquage dielectrique - mesure des charges d'influence (methode SEMM)

    Energy Technology Data Exchange (ETDEWEB)

    Liebault, J.

    1999-02-01

    The dielectric breakdown is strongly linked to the injection and the accumulation of charges in a non-conducting material. The physics of charged insulators proposes mechanisms of trapping and transport of charges in aluminium oxides by considering defects as localization sources of charges and of energy. In order to measure the influence of defects on dielectric breakdown, various aluminous ceramics have been elaborated. The nature and the quantity of defects have been characterized by the nature and the rate of impurities, by porosity, by the quantity of grain boundaries and by the presence and distribution of secondary phases. These materials have undergone breakdown tests. The dielectric rigidity depends strongly on the nature and the distribution of crystallographic defects (vacancy, interstitial ions and dislocation), on the other hand porosity below 5% has no influence. The doping of an alumina ceramic containing less than 100 ppm of impurities implies a diminution of its dielectric rigidity. The measurement of the SEMM (scanning electron microscopy mirror) effect allows the characterization of insulating materials. This method permits the evaluation of the ability for materials to trap charges, it gives information about the charge kinetic of trapping, charge localization and the energy levels of traps. (A.C.)

  19. Interpretation of Mason's equation in terms of measurable electrochemical-etching parameters governing the dielectric breakdown phenomenon

    International Nuclear Information System (INIS)

    Al-Najjar, S.A.R.; Durrani, S.A.

    1986-01-01

    A new interpretation of Mason's equation, as applicable to the electrochemical etching (ECE) of tracks in polymers, is presented in terms of physically meaningful track-etching parameters. The values of these parameters have been experimentally obtained by irradiating CR-39 foils with heavy ions ( 238 U and 129 Xe) and α-particles of various energies, and applying chemical pre-etching (CPE), followed by ECE in steps, with increasing electric field until the 'treeing' breakdown is initiated. A value of 1.19 MV cm -1 is obtained for the intrinsic electrical breakdown stress of CR-39. It is found that the track radius r used in Mason's equation is related to the radius rsub(Θ) of a sphere, inscribed within the etch cone, whose lowest point is at a fixed distance lsub(o) above the cone tip, with lsub(o) ≅ 1.75 μm for α-particle tracks of energies 2-5.5 MeV, such that r = 0.43 + rsub(Θ) (in μm). (author)

  20. Coaxial two-channel high-gradient dielectric wakefield accelerator

    Directory of Open Access Journals (Sweden)

    G. V. Sotnikov

    2009-06-01

    Full Text Available A new scheme for a dielectric wakefield accelerator is proposed that employs a cylindrical multizone dielectric structure configured as two concentric dielectric tubes with outer and inner vacuum channels for drive and accelerated bunches. Analytical and numerical studies have been carried out for such coaxial dielectric-loaded structures (CDS for high-gradient acceleration. An analytical theory of wakefield excitation by particle bunches in a multizone CDS has been formulated. Numerical calculations are presented for an example of a CDS using dielectric tubes with dielectric permittivity 5.7, having external diameters of 2.121 and 0.179 mm with inner diameters of 2.095 and 0.1 mm. An annular 5 GeV, 6 nC electron bunch with rms length of 0.035 mm energizes a wakefield on the structure axis having an accelerating gradient of ∼600  MeV/m with a transformer ratio ∼8∶1. The period of the accelerating field is ∼0.33  mm. If the width of the drive bunch channel is decreased, it is possible to obtain an accelerating gradient of >1  GeV/m while keeping the transformer ratio approximately the same. Full numerical simulations using a particle-in-cell code have confirmed results of the linear theory and furthermore have shown the important influence of the quenching wave that restricts the region of the wakefield to within several periods following the drive bunch. Numerical simulations for another example have shown nearly stable transport of drive and accelerated bunches through the CDS, using a short train of drive bunches.

  1. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, April 1--September 30, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Christophorou, L. G.; James, D. R.; Pai, R. Y.; Mathis, R. A.; Pace, M. O.; Bouldin, D. W.; Christodoulides, A. A.; Chan, C. C.

    1977-11-01

    Direct current breakdown strength measurements on a large number of multicomponent gas mixtures at low (approximately less than 1 atm) and high (approximately less than 5 atm) pressures led to the discovery of many gas mixtures of electron-attaching gases and strongly electron-attaching gases with N/sub 2/ and C/sub 3/F/sub 8/ which are superior to SF/sub 6/. Of special significance are mixtures containing C/sub 4/F/sub 6/ (perfluoro-2-butyne). The breakdown strength of one such mixture (20 percent C/sub 4/F/sub 6/ to 80 percent SF/sub 6/) is approximately 30 percent higher than pure SF/sub 6/ under identical conditions, both at low (approximately 0.7 atm) and high (4.6 atm) pressures. Perfluorocyclohexene (C/sub 6/F/sub 10/) and C/sub 5/F/sub 8/ (perfluorocyclopentene) were found at low pressure (approximately 0.2 atm) to be, respectively, approximately 2.1 and 2.2 times better than SF/sub 6/ under comparable conditions; they both have a potential as additives in gas mixtures. The effect of the inelastic electron scattering properties of a gas via negative ion resonances in the low-energy range (1 to approximately 4 eV) on the breakdown strength has been demonstrated for H/sub 2/, N/sub 2/, and CO and binary mixtures of these with SF/sub 6/ and C/sub 4/F/sub 6/ (perfluoro-2-butyne). The construction of a new high pressure (to approximately 11 atm), variable temperature (-50/sup 0/C to + 150/sup 0/C) apparatus has been completed and a practical test facility utilizing cylindrical electrode geometries has been put into operation; the first results on the latter apparatus were on SF/sub 6/-N/sub 2/ and c-C/sub 4/F/sub 8/--N/sub 2/ mixtures. Studies of environmental effects of dielectric gases via their electron-impact-induced decompositions and analysis of their breakdown products have begun using mass spectrometry and gas chromatography; C/sub 4/F/sub 6/ (perfluoro-2-butyne) seems to be resistant to electron-impact-induced decomposition indicating long

  2. High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

    Science.gov (United States)

    Bae, Jinho; Kim, Hyoung Woo; Kang, In Ho; Yang, Gwangseok; Kim, Jihyun

    2018-03-01

    We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional β-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated β-Ga2O3 MESFETs, along with a high on/off current ratio (>106) and excellent current saturation. A three-terminal off-state breakdown voltage of 344 V was obtained, with a threshold voltage of -7.3 V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional β-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated β-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the way for unlocking the full potential of β-Ga2O3 for use in a high-power nano-device with an ultrahigh breakdown voltage.

  3. Energetic high-voltage breakdowns in vacuum over a large gap for ITER neutral beam accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Villecroze, F., E-mail: Frederic.villecroze@cea.fr [CEA, IRFM, F-13108 Saint-Paul-Lez-Durance (France); Christin, L.; Esch, H.P.L. de; Simonin, A. [CEA, IRFM, F-13108 Saint-Paul-Lez-Durance (France); Schunke, B.; Svensson, L.; Hemsworth, R.; Boilson, D. [ITER Organization, Route de Vinon sur Verdon, 13115 Saint Paul Lez Durance (France)

    2013-10-15

    Highlights: ► We performed energetic high voltage breakdowns up to 370 kV with a stored energy of 1 kJ. ► No breakdowns at 200 kV could be produced over a gap of 85 mm using 100 cm{sup 2} copper electrodes. ► Electrodes damage was visible after the experiment. ► The number of arcs impacts is orders of magnitude above the number of breakdowns. -- Abstract: CEA has undertaken tests to study the resilience of copper electrodes in vacuum against energetic high-voltage breakdowns using external capacitors to provide the energy. Earlier tests succeeded in dissipating a maximum of 150 J in a 30 mm gap, limited by the equivalent series resistance (ESR) in the external capacitors. Using new ones with an ESR that is a factor of 10 lower it was unsuccessfully tried to produce breakdowns at 200 kV over the 85 mm gap, despite the use of a UV flash lamp and a “field enhancement ring” (FER) that locally increased the electric field on the cathode by 50%. Consequently, the breakdowns had to be produced by raising the voltage to 300–350 kV while maintaining the gap at 85 mm. During these tests, single breakdowns dissipated up to 1140 J in the 85 mm vacuum gap. Inspection of the electrodes revealed that substantial amounts of copper appear have been evaporated from the anode and deposited on to the cathode. Also electrode deconditioning occurred.

  4. Effect of RF Parameters on Breakdown Limits in High-Vacuum X-Band Structures

    International Nuclear Information System (INIS)

    Dolgashev, Valery A.

    2003-01-01

    RF breakdown is one of the major factors determining performance of high power rf components and rf sources. RF breakdown limits working power and produces irreversible surface damage. The breakdown limit depends on the rf circuit, structure geometry, and rf frequency. It is also a function of the input power, pulse width, and surface electric and magnetic fields. In this paper we discuss multi-megawatt operation of X-band rf structures at pulse width on the order of one microsecond. These structures are used in rf systems of high gradient accelerators. Recent experiments at Stanford Linear Accelerator Center (SLAC) have explored the functional dependence of breakdown limit on input power and pulse width. The experimental data covered accelerating structures and waveguides. Another breakdown limit of accelerating structures was associated with high magnetic fields found in waveguide-to-structure couplers. To understand and quantify these limits we simulated 3D structures with the electrodynamics code Ansoft HFSS and the Particle-In-Cell code MAGIC3D. Results of these simulations together with experimental data will be discussed in this paper

  5. Prediction of breakdown voltages in novel gases for high voltage insulation

    Energy Technology Data Exchange (ETDEWEB)

    Koch, M.

    2015-07-01

    This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF{sub 6}) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF{sub 6} is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF{sub 6} in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF{sub 6} based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media.

  6. Prediction of breakdown voltages in novel gases for high voltage insulation

    International Nuclear Information System (INIS)

    Koch, M.

    2015-01-01

    This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

  7. High stored-energy breakdown tests on electrodes made of stainless steel, copper, titanium and molybdenum

    Energy Technology Data Exchange (ETDEWEB)

    Esch, H. P. L. de, E-mail: hubert.de-esch@cea.fr; Simonin, A.; Grand, C. [CEA-Cadarache, IRFM, F-13108 St. Paul-lez-Durance (France)

    2015-04-08

    IRFM have conducted resilience tests on electrodes made of Cu, stainless steel 304L, Ti and Mo against breakdowns up to 170 kV and 300 J. The tests of the 10×10 cm{sup 2} electrodes have been performed at an electrode distance d=11 mm under vacuum (P∼5×10{sup −6} mbar). No great difference in voltage holding between the materials could be identified; all materials could reach a voltage holding between 140 and 170 kV over the 11 mm gap, i.e. results scatter within a ±10% band. After exposure to ∼10000 seconds of high-voltage (HV) on-time, having accumulated ∼1000 breakdowns, the electrodes were inspected. The anodes were covered with large and small craters. The rugosity of the anodes had increased substantially, that of the cathodes to a lesser extent. The molybdenum electrodes are least affected, but this does not show in their voltage holding capability. It is hypothesized that penetrating high-energy electrons from the breakdown project heat below the surface of the anode and cause a micro-explosion of material when melting point is exceeded. Polished electrodes have also been tested. The polishing results in a substantially reduced breakdown rate in the beginning, but after having suffered a relatively small number (∼100) of breakdowns, the polished electrodes behaved the same as the unpolished ones.

  8. High temperature measurements of the microwave dielectric properties of ceramics

    International Nuclear Information System (INIS)

    Baeraky, T.A.

    1999-06-01

    Equipment has been developed for the measurement of dielectric properties at high temperature from 25 to 1700 deg. C in the microwave frequency range 614.97 to 3620.66 MHz using the cavity perturbation technique, to measure the permittivity of a range of ceramic materials. The complex permittivities of the standard materials, water and methanol, were measured at low temperature and compared with the other published data. A statistical analysis was made for the permittivity measurements of water and methanol using sample holders of different diameter. Also the measurements of these materials were used to compare the simple perturbation equation with its modifications and alternation correction methods for sample shape and the holes at the two endplates of the cavity. The dielectric properties of solid materials were investigated from the permittivity measurements on powder materials, shown in table 4.7, using the dielectric mixture equations. Two kinds of ceramics, oxide and nitrides, were selected for the high temperature dielectric measurements in microwave frequency ranges. Pure zirconia, yttria-stabilised zirconia, and Magnesia-stabilised zirconia are the oxide ceramics while aluminium nitride and silicon nitride are the nitride ceramics. A phase transformation from monoclinic to tetragonal was observed in pure zirconia in terms of the complex permittivity measurements, and the conduction mechanism in three regions of temperature was suggested to be ionic in the first region and a mixture of ionic and electronic in the second. The phase transition disappeared with yttria-stabilised zirconia but it was observed with magnesia-stabilised zirconia. Yttria doped zirconia was fully stabilised while magnesia stabilised was partially stabilised zirconia. The dielectric property measurements of aluminium nitride indicated that there is a transition from AIN to AlON, which suggested that the external layer of the AIN which was exposed to the air, contains alumina. It was

  9. High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier.

    Science.gov (United States)

    Wang, Xiaohong; Lin, Guangqing; Li, Peng; Lv, Guoqiang; Qiu, Longzhen; Ding, Yunsheng

    2015-08-01

    1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.

  10. Optimization of nitridation conditions for high quality inter-polysilicon dielectric layers

    NARCIS (Netherlands)

    Klootwijk, J.H.; Bergveld, H.J.; van Kranenburg, H.; Woerlee, P.H.; Wallinga, Hans

    1996-01-01

    Nitridation of deposited high temperature oxides (HTO) was studied to form high quality inter-polysilicon dielectric layers for embedded non volatile memories. Good quality dielectric layers were obtained earlier by using an optimized deposition of polysilicon and by performing a post-dielectric

  11. High-power planar dielectric waveguide lasers

    International Nuclear Information System (INIS)

    Shepherd, D.P.; Hettrick, S.J.; Li, C.; Mackenzie, J.I.; Beach, R.J.; Mitchell, S.C.; Meissner, H.E.

    2001-01-01

    The advantages and potential hazards of using a planar waveguide as the host in a high-power diode-pumped laser system are described. The techniques discussed include the use of proximity-coupled diodes, double-clad waveguides, unstable resonators, tapers, and integrated passive Q switches. Laser devices are described based on Yb 3+ -, Nd 3+ -, and Tm 3+ -doped YAG, and monolithic and highly compact waveguide lasers with outputs greater than 10 W are demonstrated. The prospects for scaling to the 100 W level and for further integration of devices for added functionality in a monolithic laser system are discussed. (author)

  12. Modeling the dielectric logging tool at high frequency

    International Nuclear Information System (INIS)

    Chew, W.C.

    1987-01-01

    The high frequency dielectric logging tool has been used widely in electromagnetic well logging, because by measuring the dielectric constant at high frequencies (1 GHz), the water saturation of rocks could be known without measuring the water salinity in the rocks. As such, it could be used to delineate fresh water bearing zones, as the dielectric constant of fresh water is much higher than that of oil while they may have the same resistivity. The authors present a computer model, though electromagnetic field analysis, the response of such a measurement tool in a well logging environment. As the measurement is performed at high frequency, usually with small separation between the transmitter and receivers, some small geological features could be measured by such a tool. They use the computer model to study the behavior of such a tool across geological bed boundaries, and also across thin geological beds. Such a study could be very useful in understanding the limitation on the resolution of the tool. Furthermore, they could study the standoff effect and the depth of investigation of such a tool. This could delineate the range of usefulness of the measurement

  13. Effect of High Solenoidal Magnetic Fields on Breakdown Voltages of High Vacuum 805 MHz Cavities

    CERN Document Server

    Moretti, A; Geer, S; Qian, Z

    2004-01-01

    The demonstration of muon ionization cooling by a large factor is necessary to demonstrate the feasilibility of a collider or neutrino factory. An important cooling experiment, MICE [1], has been proposed to demonstrate 10 % cooling which will validate the technology. Ionization cooling is accomplished by passing a high-emittance beam in a multi-Tesla solenoidal channel alternately through regions of low Z material and very high accelerating RF Cavities. To determine the effect of very large solenoidal magnetic fields on the generations of Dark current, X-Rays and breakdown Voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station, and a large bore 5 T solenoidal superconducting magnet containing a pill box type Cavity with thin removable window apertures allowing dark current studies and breakdown studies of different materials. The results of this study will be presented. The study has shown that the peak achievab...

  14. Effect of high solenoidal magnetic fields on breakdown voltages of high vacuum 805 MHz cavities

    International Nuclear Information System (INIS)

    Moretti, A.; Bross, A.; Geer, S.; Qian, Z.; Norem, J.; Li, D.; Zisman, M.; Torun, Y.; Rimmer, R.; Errede, D.

    2005-01-01

    There is an on going international collaboration studying the feasibility and cost of building a muon collider or neutrino factory [1,2]. An important aspect of this study is the full understanding of ionization cooling of muons by many orders of magnitude for the collider case. An important muon ionization cooling experiment, MICE [3], has been proposed to demonstrate and validate the technology that could be used for cooling. Ionization cooling is accomplished by passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF Cavities within a multi-Tesla solenoidal field. To determine the effect of very large solenoidal magnetic fields on the generation of dark current, x-rays and on the breakdown voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station and a large warm bore 5 T solenoidal superconducting magnet containing a pill box type cavity with thin removable window apertures. This system allows dark current and breakdown studies of different window configurations and materials. The results of this study will be presented. The study has shown that the peak achievable accelerating gradient is reduced by a factor greater than 2 when solenoidal field of greater than 2 T are applied to the cavity

  15. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

    Science.gov (United States)

    Yan, Xiaodong; Esqueda, Ivan S.; Ma, Jiahui; Tice, Jesse; Wang, Han

    2018-01-01

    In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

  16. Silver Nanowire/MnO2 Nanowire Hybrid Polymer Nanocomposites: Materials with High Dielectric Permittivity and Low Dielectric Loss.

    Science.gov (United States)

    Zeraati, Ali Shayesteh; Arjmand, Mohammad; Sundararaj, Uttandaraman

    2017-04-26

    This study reports the fabrication of hybrid nanocomposites based on silver nanowire/manganese dioxide nanowire/poly(methyl methacrylate) (AgNW/MnO 2 NW/PMMA), using a solution casting technique, with outstanding dielectric permittivity and low dielectric loss. AgNW was synthesized using the hard-template technique, and MnO 2 NW was synthesized employing a hydrothermal method. The prepared AgNW:MnO 2 NW (2.0:1.0 vol %) hybrid nanocomposite showed a high dielectric permittivity (64 at 8.2 GHz) and low dielectric loss (0.31 at 8.2 GHz), which are among the best reported values in the literature in the X-band frequency range (8.2-12.4 GHz). The superior dielectric properties of the hybrid nanocomposites were attributed to (i) dimensionality match between the nanofillers, which increased their synergy, (ii) better dispersion state of AgNW in the presence of MnO 2 NW, (iii) positioning of ferroelectric MnO 2 NW in between AgNWs, which increased the dielectric permittivity of nanodielectrics, thereby increasing dielectric permittivity of the hybrid nanocomposites, (iv) barrier role of MnO 2 NW, i.e., cutting off the contact spots of AgNWs and leading to lower dielectric loss, and (v) AgNW aligned structure, which increased the effective surface area of AgNWs, as nanoelectrodes. Comparison of the dielectric properties of the developed hybrid nanocomposites with the literature highlights their great potential for flexible capacitors.

  17. Dielectric characterization of high-performance spaceflight materials

    Science.gov (United States)

    Kleppe, Nathan; Nurge, Mark A.; Bowler, Nicola

    2015-03-01

    As commercial space travel increases, the need for reliable structural health monitoring to predict possible weaknesses or failures of structural materials also increases. Monitoring of these materials can be done through the use of dielectric spectroscopy by comparing permittivity or conductivity measurements performed on a sample in use to that of a pristine sample from 100 μHz to 3 GHz. Fluctuations in these measured values or of the relaxation frequencies, if present, can indicate chemical or physical changes occurring within the material and the possible need for maintenance/replacement. In this work, we establish indicative trends that occur due to changes in dielectric spectra during accelerated aging of various high-performance polymeric materials: ethylene vinyl alcohol (EVOH), Poly (ether ether ketone) (PEEK), polyphenylene sulfide (PPS), and ultra-high molecular weight polyethylene (UHMWPE). Uses for these materials range from electrical insulation and protective coatings to windows and air- or space-craft parts that may be subject to environmental damage over long-term operation. Samples were prepared by thermal exposure and, separately, by ultraviolet/water-spray cyclic aging. The aged samples showed statistically-significant trends of either increasing or decreasing real or imaginary permittivity values, relaxation frequencies, conduction or the appearance of new relaxation modes. These results suggest that dielectric testing offers the possibility of nondestructive evaluation of the extent of age-related degradation in these materials.

  18. Dielectric and acoustical high frequency characterisation of PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Conde, Janine; Muralt, Paul, E-mail: janine.conde@epfl.ch [Department of Materials Science, EPFL (Switzerland)

    2010-02-15

    Pb(Zr, Ti)O{sub 3} (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {l_brace}100{r_brace} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  19. Scaling of Dielectric Breakdown Thresholds in Earth's and CO2-rich atmospheres: Impact for Predictions of Extraterrestrial Transient Luminous Events and Lightning Discharges

    Science.gov (United States)

    Riousset, J. A.

    2016-12-01

    Earth's atmospheric electricity manifests itself in the form of glow, corona, streamer, and leader discharges observed as Saint Elmo's fire, sprites, lightning and jets discharges, and other Transient Luminous Events (TLEs). All of these are types of dielectric breakdown, but are governed by different physics. In particular, their initiation is associated with the crossing of specific electric field thresholds: relativistic runaway, streamer propagation, conventional breakdown, or thermal runaway thresholds, some better understood than others. For example, the initiation of a lightning discharge is known to occur when the local electric field exceeds a value similar to relativistic runaway field, but the exact threshold, as well as the physical mechanisms at work, remain rather unclear to date. Scaling laws for electric fields (and other quantities) have been established by Pasko et al. [GRL, 25(12), 2123-2126, 1998] and Pasko [NATO Sci. Series, Springer, 253-311, 2006]. In this work, we develop profiles for initiation criteria in air and in other atmospheric environments. We further calculate their associated scaling laws to determine the ability to trigger lightning flashes and TLEs in our solar system. This lets us predict the likelihood of electrical discharges on, e.g., Mars, Venus and Titan, and calculate the expected electric field conditions, under which discharges have been observed on Jupiter, Saturn, Uranus, and Neptune [Leblanc et al., ISSI Spa. Sci. Series, Springer, 2008, Yair, Adv. Space Res., 50(3), 293-310, 2012]. Our results anticipate the arrival of ExoMars 2016's Schiaparelli module, which will provide the first records of electric field at the surface of the planet [Déprez et al., EGU GA, 16, 16613, 2014]. This research is also motived by the increasing probability of manned missions to Mars and the potential electrostatic hazards it may face [Yair, 2012], and by the role of electrical discharges in the creation of active radicals, some of

  20. High power breakdown testing of a photonic band-gap accelerator structure with elliptical rods

    Directory of Open Access Journals (Sweden)

    Brian J. Munroe

    2013-01-01

    Full Text Available An improved single-cell photonic band-gap (PBG structure with an inner row of elliptical rods (PBG-E was tested with high power at a 60 Hz repetition rate at X-band (11.424 GHz, achieving a gradient of 128  MV/m at a breakdown probability of 3.6×10^{-3} per pulse per meter at a pulse length of 150 ns. The tested standing-wave structure was a single high-gradient cell with an inner row of elliptical rods and an outer row of round rods; the elliptical rods reduce the peak surface magnetic field by 20% and reduce the temperature rise of the rods during the pulse by several tens of degrees, while maintaining good damping and suppression of high order modes. When compared with a single-cell standing-wave undamped disk-loaded waveguide structure with the same iris geometry under test at the same conditions, the PBG-E structure yielded the same breakdown rate within measurement error. The PBG-E structure showed a greatly reduced breakdown rate compared with earlier tests of a PBG structure with round rods, presumably due to the reduced magnetic fields at the elliptical rods vs the fields at the round rods, as well as use of an improved testing methodology. A post-testing autopsy of the PBG-E structure showed some damage on the surfaces exposed to the highest surface magnetic and electric fields. Despite these changes in surface appearance, no significant change in the breakdown rate was observed in testing. These results demonstrate that PBG structures, when designed with reduced surface magnetic fields and operated to avoid extremely high pulsed heating, can operate at breakdown probabilities comparable to undamped disk-loaded waveguide structures and are thus viable for high-gradient accelerator applications.

  1. Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

    Science.gov (United States)

    Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

    2013-10-18

    Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

  2. Homogeneous/Inhomogeneous-Structured Dielectrics and their Energy-Storage Performances.

    Science.gov (United States)

    Yao, Zhonghua; Song, Zhe; Hao, Hua; Yu, Zhiyong; Cao, Minghe; Zhang, Shujun; Lanagan, Michael T; Liu, Hanxing

    2017-05-01

    The demand for dielectric capacitors with higher energy-storage capability is increasing for power electronic devices due to the rapid development of electronic industry. Existing dielectrics for high-energy-storage capacitors and potential new capacitor technologies are reviewed toward realizing these goals. Various dielectric materials with desirable permittivity and dielectric breakdown strength potentially meeting the device requirements are discussed. However, some significant limitations for current dielectrics can be ascribed to their low permittivity, low breakdown strength, and high hysteresis loss, which will decrease their energy density and efficiency. Thus, the implementation of dielectric materials for high-energy-density applications requires the comprehensive understanding of both the materials design and processing. The optimization of high-energy-storage dielectrics will have far-reaching impacts on the sustainable energy and will be an important research topic in the near future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories.

    Science.gov (United States)

    Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

    2018-03-08

    The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories.

  4. Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

    Science.gov (United States)

    Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

    2017-11-01

    The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

  5. High Current Density Electrical Breakdown of TiS

    NARCIS (Netherlands)

    Molina-Mendoza, Aday J.; Island, J.O.; Paz, Wendel S.; Clamagirand, Jose Manuel; Ares, Josè Ramon; Flores, Eduardo; Leardini, Fabrice; Sánchez, Carlos; Agraït, Nicolás; Rubio-Bollinger, Gabino; van der Zant, H.S.J.; Ferrer, Isabel J.; Palacios, JJ; Castellanos-Gomez, Andres

    2017-01-01

    The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to

  6. Improved dielectric constant and breakdown strength of γ-phase dominant super toughened polyvinylidene fluoride/TiO2 nanocomposite film: an excellent material for energy storage applications and piezoelectric throughput

    Science.gov (United States)

    Mehebub Alam, Md; Ghosh, Sujoy Kumar; Sarkar, Debabrata; Sen, Shrabanee; Mandal, Dipankar

    2017-01-01

    Titanium dioxide (TiO2) nanoparticles (NPs) embedded γ-phase containing polyvinylidene fluoride (PVDF) nanocomposite (PNC) film turns to an excellent material for energy storage application due to an increased dielectric constant (32 at 1 kHz), enhanced electric breakdown strength (400 MV m-1). It also exhibits a high energy density of 4 J cm-3 which is 25 times higher than that of virgin PVDF. 98% of the electroactive γ-phase has been acheived by the incorporation of TiO2 NPs and the resulting PNC behaves like a super-toughened material due to a dramatic improvement (more than 80%) in the tensile strength. Owing to their electroactive nature and extraordinary mechanical properties, PNC films have a strong ability to fabricate the piezoelectric nanogenerators (PNGs) that have recently been an area of focus regarding mechanical energy harvesting. The feasibility of piezoelectric voltage generation from PNGs is demostrated under the rotating fan that also promises further utility such as rotational speed (RPM) determination.

  7. From surface to volume plasmons in hyperbolic metamaterials: General existence conditions for bulk high-k waves in metal-dielectric and graphene-dielectric multilayers

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Andryieuski, Andrei; Sipe, John E.

    2014-01-01

    -dielectric and recently introduced graphene-dielectric stacks. We confirm that short-range surface plasmons in thin metal layers can give rise to hyperbolic metamaterial properties and demonstrate that long-range surface plasmons cannot. We also show that graphene-dielectric multilayers tend to support high- k waves...

  8. Cyanoresin, cyanoresin/cellulose triacetate blends for thin film, dielectric capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Lewis, Carol R. (Inventor); Cygan, Peter J. (Inventor); Jow, T. Richard (Inventor)

    1996-01-01

    Non brittle dielectric films are formed by blending a cyanoresin such as cyanoethyl, hydroxyethyl cellulose (CRE) with a compatible, more crystalline resin such as cellulose triacetate. The electrical breakdown strength of the blend is increased by orienting the films by uniaxial or biaxial stretching. Blends of high molecular weight CRE with high molecular weight cyanoethyl cellulose (CRC) provide films with high dielectric constants.

  9. Polaron-electron assisted giant dielectric dispersion in SrZrO{sub 3} high-k dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Borkar, Hitesh; Barvat, Arun; Pal, Prabir; Kumar, Ashok, E-mail: ashok553@nplindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Shukla, A. K. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Pulikkotil, J. J. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Computation and Networking Facility, CSIR-National Physical Laboratory, New Delhi 110012 (India)

    2016-06-07

    The SrZrO{sub 3} is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (T{sub e}) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O{sup 2−} anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO{sub 6} octahedral angle in the temperature range of 650–750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.

  10. An Approach for Measuring the Dielectric Strength of OLED Materials

    Directory of Open Access Journals (Sweden)

    Sujith Sudheendran Swayamprabha

    2018-06-01

    Full Text Available Surface roughness of electrodes plays a key role in the dielectric breakdown of thin-film organic devices. The rate of breakdown will increase when there are stochastic sharp spikes on the surface of electrodes. Additionally, surface having spiking morphology makes the determination of dielectric strength very challenging, specifically when the layer is relatively thin. We demonstrate here a new approach to investigate the dielectric strength of organic thin films for organic light-emitting diodes (OLEDs. The thin films were deposited on a substrate using physical vapor deposition (PVD under high vacuum. The device architectures used were glass substrate/indium tin oxide (ITO/organic material/aluminum (Al and glass substrate/Al/organic material/Al. The dielectric strength of the OLED materials was evaluated from the measured breakdown voltage and layer thickness.

  11. High-pressure cell for simultaneous dielectric and neutron spectroscopy

    Science.gov (United States)

    Sanz, Alejandro; Hansen, Henriette Wase; Jakobsen, Bo; Pedersen, Ib H.; Capaccioli, Simone; Adrjanowicz, Karolina; Paluch, Marian; Gonthier, Julien; Frick, Bernhard; Lelièvre-Berna, Eddy; Peters, Judith; Niss, Kristine

    2018-02-01

    In this article, we report on the design, manufacture, and testing of a high-pressure cell for simultaneous dielectric and neutron spectroscopy. This cell is a unique tool for studying dynamics on different time scales, from kilo- to picoseconds, covering universal features such as the α relaxation and fast vibrations at the same time. The cell, constructed in cylindrical geometry, is made of a high-strength aluminum alloy and operates up to 500 MPa in a temperature range between roughly 2 and 320 K. In order to measure the scattered neutron intensity and the sample capacitance simultaneously, a cylindrical capacitor is positioned within the bore of the high-pressure container. The capacitor consists of two concentric electrodes separated by insulating spacers. The performance of this setup has been successfully verified by collecting simultaneous dielectric and neutron spectroscopy data on dipropylene glycol, using both backscattering and time-of-flight instruments. We have carried out the experiments at different combinations of temperature and pressure in both the supercooled liquid and glassy state.

  12. High Gain and High Directive of Antenna Arrays Utilizing Dielectric Layer on Bismuth Titanate Ceramics

    Directory of Open Access Journals (Sweden)

    F. H. Wee

    2012-01-01

    Full Text Available A high gain and high directive microstrip patch array antenna formed from dielectric layer stacked on bismuth titanate (BiT ceramics have been investigated, fabricated, and measured. The antennas are designed and constructed with a combination of two-, four-, and six-BiT elements in an array form application on microwave substrate. For gain and directivity enhancement, a layer of dielectric was stacked on the BiT antenna array. We measured the gain and directivity of BiT array antennas with and without the dielectric layer and found that the gain of BiT array antenna with the dielectric layer was enhanced by about 1.4 dBi of directivity and 1.3 dB of gain over the one without the dielectric layer at 2.3 GHz. The impedance bandwidth of the BiT array antenna both with and without the dielectric layer is about 500 MHz and 350 MHz, respectively, which is suitable for the application of the WiMAX 2.3 GHz system. The utilization of BiT ceramics that covers about 90% of antenna led to high radiation efficiency, and small-size antennas were produced. In order to validate the proposed design, theoretical and measured results are provided and discussed.

  13. A high energy density relaxor antiferroelectric pulsed capacitor dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Hwan Ryul; Lynch, Christopher S. [Department of Mechanical and Aerospace Engineering, University of California, Los Angeles (UCLA), Los Angeles, California 90095 (United States)

    2016-01-14

    Pulsed capacitors require high energy density and low loss, properties that can be realized through selection of composition. Ceramic (Pb{sub 0.88}La{sub 0.08})(Zr{sub 0.91}Ti{sub 0.09})O{sub 3} was found to be an ideal candidate. La{sup 3+} doping and excess PbO were used to produce relaxor antiferroelectric behavior with slim and slanted hysteresis loops to reduce the dielectric hysteresis loss, to increase the dielectric strength, and to increase the discharge energy density. The discharge energy density of this composition was found to be 3.04 J/cm{sup 3} with applied electric field of 170 kV/cm, and the energy efficiency, defined as the ratio of the discharge energy density to the charging energy density, was 0.920. This high efficiency reduces the heat generated under cyclic loading and improves the reliability. The properties were observed to degrade some with temperature increase above 80 °C. Repeated electric field cycles up to 10 000 cycles were applied to the specimen with no observed performance degradation.

  14. Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

    Science.gov (United States)

    Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

    2017-10-01

    A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

  15. Amyloid-beta binds catalase with high affinity and inhibits hydrogen peroxide breakdown.

    OpenAIRE

    Milton, N G

    1999-01-01

    Amyloid-beta (Abeta) specifically bound purified catalase with high affinity and inhibited catalase breakdown of H(2)O(2). The Abeta-induced catalase inhibition involved formation of the inactive catalase Compound II and was reversible. CatalaseAbeta interactions provide rapid functional assays for the cytotoxic domain of Abeta and suggest a mechanism for some of the observed actions of Abeta plus catalase in vitro.

  16. Development and Breakdown of Goertler Vortices in High Speed Boundary Layers

    Science.gov (United States)

    Li, Fei; Choudhari, Meelan; Chang, Chau-Lyan; Wu, Minwei; Greene, Ptrick T.

    2010-01-01

    The nonlinear development of G rtler instability over a concave surface gives rise to a highly distorted stationary flow in the boundary layer that has strong velocity gradients in both spanwise and wall-normal directions. This distorted flow is susceptible to strong, high frequency secondary instability that leads to the onset of transition. For high Mach number flows, the boundary layer is also subject to the second mode instability. The nonlinear development of G rtler vortices and the ensuing growth and breakdown of secondary instability, the G rtler vortex interactions with second mode instabilities as well as oblique second mode interactions are examined in the context of both internal and external hypersonic configurations using nonlinear parabolized stability equations, 2-D eigenvalue analysis and direct numerical simulation. For G rtler vortex development inside the Purdue Mach 6 Ludwieg tube wind tunnel, multiple families of unstable secondary eigenmodes are identified and their linear and nonlinear evolution is examined. The computation of secondary instability is continued past the onset of transition to elucidate the physical mechanisms underlying the laminar breakdown process. Nonlinear breakdown scenarios associated with transition over a Mach 6 compression cone configuration are also explored.

  17. High-voltage pulsed life of multistressed polypropylene capacitor dielectric

    International Nuclear Information System (INIS)

    Laghari, J.R.

    1992-01-01

    High-voltage polypropylene capacitors were aged under singular as well as simultaneous multiple stresses (electrical, thermal, and radiation) at the University of Buffalo's 2 MW thermal nuclear reactor. These stresses were combined neutron-gamma radiation with a total dose of 1.6 x 10 6 rad, electrical stress at 40 V rms /μm, and thermal stress at 90 degrees C. After exposure, the polypropylene dielectric was tested for life (number of pulses to fail) under high-voltage high-repetition-rate (100 pps) pulses. Pulsed life data were also compared with ac life data. Results show that radiation stress causes the most degradation in life, either acting alone or in combination with other stresses. The largest reduction in life occurs when polypropylene is aged under simultaneous multiple stresses (electrical, thermal, and radiation). In this paper, it is shown that pulsed life can be equivalently compared with ac life

  18. Electrical Capacitance Volume Tomography with High-Contrast Dielectrics

    Science.gov (United States)

    Nurge, Mark

    2010-01-01

    The Electrical Capacitance Volume Tomography (ECVT) system has been designed to complement the tools created to sense the presence of water in nonconductive spacecraft materials, by helping to not only find the approximate location of moisture but also its quantity and depth. The ECVT system has been created for use with a new image reconstruction algorithm capable of imaging high-contrast dielectric distributions. Rather than relying solely on mutual capacitance readings as is done in traditional electrical capacitance tomography applications, this method reconstructs high-resolution images using only the self-capacitance measurements. The image reconstruction method assumes that the material under inspection consists of a binary dielectric distribution, with either a high relative dielectric value representing the water or a low dielectric value for the background material. By constraining the unknown dielectric material to one of two values, the inverse math problem that must be solved to generate the image is no longer ill-determined. The image resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminum structure inserted at different positions within the sensing region. The cuboid geometry of the system has two parallel planes of 16 conductors arranged in a 4 4 pattern. The electrode geometry consists of parallel planes of copper conductors, connected through custom-built switch electronics, to a commercially available capacitance to digital converter. The figure shows two 4 4 arrays of electrodes milled from square sections of copper-clad circuit-board material and mounted on two pieces of glass-filled plastic backing, which were cut to approximately square shapes, 10 cm on a side. Each electrode is placed on 2.0-cm centers. The parallel arrays were mounted with the electrode arrays approximately 3 cm apart. The open ends

  19. The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

    Science.gov (United States)

    Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

    2018-02-01

    A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

  20. High-Voltage Breakdown Penalties for the Beam-Breakup Instability

    International Nuclear Information System (INIS)

    Ekdahl, Carl August

    2016-01-01

    The strength of the dangerous beam breakup (BBU) instability in linear induction accelerators (LIAs) is determined by the transverse coupling impedance Z_⊥ of the induction cell cavity. For accelerating gap width w less than the beam pipe radius b, the transverse impedance is theoretically proportional to w/b, favoring narrow gaps to suppress BBU. On the other hand, cells with narrow gaps cannot support high accelerating gradients, because of electrical breakdown and shorting of the gap. Thus, there is an engineering trade-off between BBU growth and accelerating gradient, which must be considered for next generation LIAs now being designed. In this article this tradeoff is explored, using a simple pillbox cavity as an illustrative example. For this model, widening the gap to reduce the probability of breakdown increases BBU growth, unless higher magnetic focusing fields are used to further suppress the instability.

  1. Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

    International Nuclear Information System (INIS)

    Zhao Linna; Yu Peihong; Yan Dawei; Zhou Hao; Wu Jinbo; Cui Zhiqiang; Gu Xiaofeng; Guo Zixiang; Sun Huarui

    2017-01-01

    The progressive current degradation and breakdown behaviors of GaN-based light emitting diodes under high reverse-bias stress are studied by combining the electrical, optical, and surface morphology characterizations. The current features a typical “soft breakdown” behavior, which is linearly correlated to an increase of the accumulative number of electroluminescence spots. The time-to-failure for each failure site approximately obeys a Weibull distribution with slopes of about 0.67 and 4.09 at the infant and wear-out periods, respectively. After breakdown, visible craters can be observed at the device surface as a result of transient electrostatic discharge. By performing focused ion beam cuts coupled with scan electron microscope, we observed a local current shunt path in the surface layer, caused by the rapid microstructure deterioration due to significant current heating effect, consistent well with the optical beam induced resistance change observations. (paper)

  2. Energy dissipation on ion-accelerator grids during high-voltage breakdown

    International Nuclear Information System (INIS)

    Menon, M.M.; Ponte, N.S.

    1981-01-01

    The effects of stored energy in the system capacitance across the accelerator grids during high voltage vacuum breakdown are examined. Measurements were made of the current flow and the energy deposition on the grids during breakdown. It is shown that only a portion (less than or equal to 40 J) of the total stored energy (congruent to 100 J) is actually dissipated on the grids. Most of the energy is released during the formation phase of the vacuum arc and is deposited primarily on the most positive grid. Certain abnormal situations led to energy depositions of about 200 J on the grid, but the ion accelerator endured them without exhibiting any deterioration in performance

  3. Dielectric properties of polymer-particle nanocomposites influenced by electronic nature of filler surfaces.

    Science.gov (United States)

    Siddabattuni, Sasidhar; Schuman, Thomas P; Dogan, Fatih

    2013-03-01

    The interface between the polymer and the particle has a critical role in altering the properties of a composite dielectric. Polymer-ceramic nanocomposites are promising dielectric materials for many electronic and power devices, combining the high dielectric constant of ceramic particles with the high dielectric breakdown strength of a polymer. Self-assembled monolayers of electron rich or electron poor organophosphate coupling groups were applied to affect the filler-polymer interface and investigate the role of this interface on composite behavior. The interface has potential to influence dielectric properties, in particular the leakage and breakdown resistance. The composite films synthesized from the modified filler particles dispersed into an epoxy polymer matrix were analyzed by dielectric spectroscopy, breakdown strength, and leakage current measurements. The data indicate that significant reduction in leakage currents and dielectric losses and improvement in dielectric breakdown strengths resulted when electropositive phenyl, electron-withdrawing functional groups were located at the polymer-particle interface. At a 30 vol % particle concentration, dielectric composite films yielded a maximum energy density of ~8 J·cm(-3) for TiO2-epoxy nanocomposites and ~9.5 J·cm(-3) for BaTiO3-epoxy nanocomposites.

  4. Thermal Experimental Analysis for Dielectric Characterization of High Density Polyethylene Nanocomposites

    Directory of Open Access Journals (Sweden)

    Ahmed Thabet Mohamed

    2016-01-01

    Full Text Available The importance of nanoparticles in controlling physical properties of polymeric nanocomposite materials leads us to study effects of these nanoparticles on electric and dielectric properties of polymers in industry In this research, the dielectric behaviour of High-Density Polyethylene (HDPE nanocomposites materials that filled with nanoparticles of clay or fumed silica has been investigated at various frequencies (10 Hz-1 kHz and temperatures (20-60°C. Dielectric spectroscopy has been used to characterize ionic conduction, then, the effects of nanoparticles concentration on the dielectric losses and capacitive charge of the new nanocomposites can be stated. Capacitive charge and loss tangent in high density polyethylene nanocomposites are measured by dielectric spectroscopy. Different dielectric behaviour has been observed depending on type and concentration of nanoparticles under variant thermal conditions.

  5. Dielectric elastomers with novel highly-conducting electrodes

    Science.gov (United States)

    Böse, Holger; Uhl, Detlev

    2013-04-01

    Beside the characteristics of the elastomer material itself, the performance of dielectric elastomers in actuator, sensor as well as generator applications depends also on the properties of the electrode material. Various electrode materials based on metallic particles dispersed in a silicone matrix were manufactured and investigated. Anisotropic particles such as silver-coated copper flakes and silver-coated glass flakes were used for the preparation of the electrodes. The concentration of the metallic particles and the thickness of the electrode layers were varied. Specific conductivities derived from resistance measurements reached about 100 S/cm and surmount those of the reference materials based on graphite and carbon black by up to three orders of magnitude. The high conductivities of the new electrode materials can be maintained even at very large stretch deformations up to 200 %.

  6. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    International Nuclear Information System (INIS)

    Dakhel, A.A.; Jasim, Khalil E.; Cassidy, S.; Henari, F.Z.

    2013-01-01

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε ′ ∞ ≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z * (ω) and modulus M * (ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices

  7. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

    2013-09-20

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

  8. Understanding and Prevention of Transient Voltages and Dielectric Breakdown in High Voltage Battery Systems

    Science.gov (United States)

    2017-07-31

    integrated into unique power system architectures that employ energy generation and storage capable of working together to supply the intermittent ...unidirectional and bidirectional TVS diodes is seen in Figure 3. TVS diodes are known for having fast switch on times but their switch off times are...switch in the circuit, simulating the fast changes in current in the profile of interest. The simulation is run for 50 ms and the initial condition of

  9. High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

    2015-08-31

    This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

  10. Experimental Study of the Effect of Beam Loading on RF Breakdown Rate in CLIC High-Gradient Accelerating Structures

    CERN Document Server

    Tecker, F; Kelisani, M; Doebert, S; Grudiev, A; Quirante, J; Riddone, G; Syratchev, I; Wuensch, W; Kononenko, O; Solodko, A; Lebet, S

    2013-01-01

    RF breakdown is a key issue for the multi-TeV highluminosity e+e- Compact Linear Collider (CLIC). Breakdowns in the high-gradient accelerator structures can deflect the beam and decrease the desired luminosity. The limitations of the accelerating structures due to breakdowns have been studied so far without a beam present in the structure. The presence of the beam modifies the distribution of the electrical and magnetic field distributions, which determine the breakdown rate. Therefore an experiment has been designed for high power testing a CLIC prototype accelerating structure with a beam present in the CLIC Test Facility (CTF3). A special beam line allows extracting a beam with nominal CLIC beam current and duration from the CTF3 linac. The paper describes the beam optics design for this experimental beam line and the commissioning of the experiment with beam.

  11. High dielectric permittivity elastomers from well-dispersed expanded graphite in low concentrations

    DEFF Research Database (Denmark)

    Daugaard, Anders Egede; Hassouneh, Suzan Sager; Kostrzewska, Malgorzata

    2013-01-01

    The development of elastomer materials with a high dielectric permittivity has attracted increased interest over the last years due to their use in for example dielectric electroactive polymers. For this particular use, both the electrically insulating properties - as well as the mechanical...

  12. High resolution imaging of dielectric surfaces with an evanescent field optical microscope

    NARCIS (Netherlands)

    van Hulst, N.F.; Segerink, Franciscus B.; Bölger, B.

    1992-01-01

    An evanescent field optical microscope (EFOM) is presented which employs frustrated total internal reflection o­n a localized scale by scanning a dielectric tip in close proximity to a sample surface. High resolution images of dielectric gratings and spheres containing both topographic and

  13. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    Science.gov (United States)

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    1998-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  14. Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors

    Science.gov (United States)

    Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

    2018-05-01

    We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners. By introducing a rounded-electrode architecture, premature breakdown at the corners was mitigated. Moreover, the rate of breakdown voltage (V BR) degradation with an increasing gate width (W G) was significantly lower for devices with rounded corners. When W G was increased from 100 µm to 10 mm, the V BR of the reference device dropped drastically, from 1,200 to 300 V, whereas that of the rounded-electrode device only decreased to a respectable value of 730 V.

  15. Accelerating Dielectrics Design Using Thinking Machines

    Science.gov (United States)

    Ramprasad, R.

    2013-03-01

    High energy density capacitors are required for several pulsed power and energy storage applications, including food preservation, nuclear test simulations, electric propulsion of ships and hybrid electric vehicles. The maximum electrostatic energy that can be stored in a capacitor dielectric is proportional to its dielectric constant and the square of its breakdown field. The current standard material for capacitive energy storage is polypropylene which has a large breakdown field but low dielectric constant. We are involved in a search for new classes of polymers superior to polypropylene using first principles computations combined with statistical and machine learning methods. Essential to this search are schemes to efficiently compute the dielectric constant of polymers and the intrinsic dielectric breakdown field, as well as methods to determine the stable structures of new classes of polymers and strategies to efficiently navigate through the polymer chemical space offered by the periodic table. These methodologies have been combined with statistical learning paradigms in order to make property predictions rapidly, and promising classes of polymeric systems for energy storage applications have been identified. This work is being supported by the Office of Naval Research.

  16. Investigation of the dielectric recovery in synthetic air in a high voltage circuit breaker

    International Nuclear Information System (INIS)

    Seeger, M; Naidis, G; Steffens, A; Nordborg, H; Claessens, M

    2005-01-01

    The dielectric recovery of an axially blown arc in an experimental set-up based on a conventional HV circuit breaker was investigated both experimentally and theoretically. As a quenching gas, synthetic air was used. The investigated time range was from 10 μs to 10 ms after current zero (CZ). A fast rise in the dielectric strength during the first 100 μs, followed by a plateau and further rise later was observed. The dependences on the breaking current and pressure were determined. The measured dielectric recovery during the first 100 μs after CZ could be reproduced with good accuracy by computational fluid dynamics simulations. From that it could be deduced that the temperature decay in the axis does not depend sensitively on the pressure. The dielectric recovery during the first 100 μs scales therefore mainly with the filling pressure. The plateau in the breakdown characteristic is due to a hot vapour layer from the still evaporating PTFE nozzle surface

  17. Synthesis and Characterization of High-Dielectric-Constant Nanographite-Polyurethane Composite

    Science.gov (United States)

    Mishra, Praveen; Bhat, Badekai Ramachandra; Bhattacharya, B.; Mehra, R. M.

    2018-05-01

    In the face of ever-growing demand for capacitors and energy storage devices, development of high-dielectric-constant materials is of paramount importance. Among various dielectric materials available, polymer dielectrics are preferred for their good processability. We report herein synthesis and characterization of nanographite-polyurethane composite with high dielectric constant. Nanographite showed good dispersibility in the polyurethane matrix. The thermosetting nature of polyurethane gives the composite the ability to withstand higher temperature without melting. The resultant composite was studied for its dielectric constant (ɛ) as a function of frequency. The composite exhibited logarithmic variation of ɛ from 3000 at 100 Hz to 225 at 60 kHz. The material also exhibited stable dissipation factor (tan δ) across the applied frequencies, suggesting its ability to resist current leakage.

  18. High-Order Dielectric Metasurfaces for High-Efficiency Polarization Beam Splitters and Optical Vortex Generators

    Science.gov (United States)

    Guo, Zhongyi; Zhu, Lie; Guo, Kai; Shen, Fei; Yin, Zhiping

    2017-08-01

    In this paper, a high-order dielectric metasurface based on silicon nanobrick array is proposed and investigated. By controlling the length and width of the nanobricks, the metasurfaces could supply two different incremental transmission phases for the X-linear-polarized (XLP) and Y-linear-polarized (YLP) light with extremely high efficiency over 88%. Based on the designed metasurface, two polarization beam splitters working in high-order diffraction modes have been designed successfully, which demonstrated a high transmitted efficiency. In addition, we have also designed two vortex-beam generators working in high-order diffraction modes to create vortex beams with the topological charges of 2 and 3. The employment of dielectric metasurfaces operating in high-order diffraction modes could pave the way for a variety of new ultra-efficient optical devices.

  19. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, October 1, 1977--March 31, 1978

    International Nuclear Information System (INIS)

    Christophorou, L.G.; James, D.R.; Pai, R.Y.; Mathis, R.A.; Sauers, I.; Pace, M.O.; Bouldin, D.W.; Christodoulides, A.A.; Chan, C.C.

    1978-06-01

    The work on gas mixtures is focused on combinations of gases consisting of strongly electron-attaching components and one or more electron slowing-down components. Hypotheses based on the positions of electronically excited states are borne out experimentally in the low pressure ( 6 . Although the ionization cross section for Ar is very much greater than that for Ne, Ar is a superior buffer gas. A theoretical discussion is given which describes the relation between the dielectric strength of a gas to its physical parameters including the electron attachment cross section, the ionization cross section, the ionization potential, and the electron energy distribution function. Also discussed is the importance of perfluorination in hydrocarbons to effect an increase in the electron attachment cross section and electron affinity and a decrease in the ionization cross section, and hence an increase in dielectric strength. Attachment rates were measured as a function of the mean electron energy for a comprehensive list of perfluorocarbons. Breakdown voltages were determined for SF 6 and for SF 6 (20%)/N 2 (80%) as a function of temperature from -15 0 C to 85 0 C. Environmental aspects of gas dielectrics pertaining to gas decomposition and toxicity were studied

  20. Polymorphous GdScO3 as high permittivity dielectric

    International Nuclear Information System (INIS)

    Schäfer, A.; Rahmanizadeh, K.; Bihlmayer, G.; Luysberg, M.; Wendt, F.; Besmehn, A.; Fox, A.

    2015-01-01

    Four different polymorphs of GdScO 3 are assessed theoretically and experimentally with respect to their suitability as a dielectric. The calculations carried out by density functional theory reveal lattice constants, band gaps and the energies of formation of three crystal phases. Experimentally all three crystal phases and the amorphous phase can be realized as thin films by pulsed laser deposition using various growth templates. Their respective crystal structures are confirmed by X-ray diffraction and transmission electron microscopy reflecting the calculated lattice constants. X-ray photoelectron spectroscopy unveils the band gaps of the different polymorphs of GdScO 3 which are above 5 eV for all films demonstrating good insulating properties. From capacitance voltage measurements, high permittivities of up to 27 for hexagonal GdScO 3 are deduced. - Highlights: • Different epitaxial polymorph phases of GdScO 3 were grown by pulsed laser deposition. • The cubic phase of GdScO 3 is reported for the first time. • All phases are proven to be useful for the use in silicon based and III–V based microelectronic devices.

  1. DOE Task Force meeting on Electrical Breakdown of Insulating Ceramics in a High Radiation Field

    International Nuclear Information System (INIS)

    Green, P.H.

    1991-08-01

    This volume contains the abstracts and presentation material from the Research Assistance Task Force Meeting ''Electrical Breakdown of Insulating Ceramics in a High-Radiation Field.'' The meeting was jointly sponsored by the Office of Basic Energy Sciences and the Office of Fusion Energy of the US Department of Energy in Vail, Colorado, May 28--June 1, 1991. The 26 participants represented expertise in fusion, radiation damage, electrical breakdown, ceramics, and semiconductor and electronic structures. These participants came from universities, industries, national laboratories, and government. The attendees represented eight nations. The Task Force meeting was organized in response to the recent discovery that a combination of temperature, electric field, and radiation for an extended period of time has an unexplained adverse effect in ceramics, termed radiation-enhanced electrical degradation (REED). REED occurs after an incubation period and continues to accelerate with irradiation until the ceramics can no longer be regarded as insulators. It appears that REED is irreversible and the ceramic insulators cannot be readily annealed or otherwise repaired for future services. This effect poses a serious threat for fusion reactors, which require electrical insulators in diagnostic devices, in radio frequency and neutral beam systems, and in magnetic assemblies. The problem of selecting suitable electrical insulating materials in thus far more serious than previously anticipated

  2. Enhanced Energy-Storage Density and High Efficiency of Lead-Free CaTiO3-BiScO3 Linear Dielectric Ceramics.

    Science.gov (United States)

    Luo, Bingcheng; Wang, Xiaohui; Tian, Enke; Song, Hongzhou; Wang, Hongxian; Li, Longtu

    2017-06-14

    A novel lead-free (1 - x)CaTiO 3 -xBiScO 3 linear dielectric ceramic with enhanced energy-storage density was fabricated. With the composition of BiScO 3 increasing, the dielectric constant of (1 - x)CaTiO 3 -xBiScO 3 ceramics first increased and then decreased after the composition x > 0.1, while the dielectric loss decreased first and increased. For the composition x = 0.1, the polarization was increased into 12.36 μC/cm 2 , 4.6 times higher than that of the pure CaTiO 3 . The energy density of 0.9CaTiO 3 -0.1BiScO 3 ceramic was 1.55 J/cm 3 with the energy-storage efficiency of 90.4% at the breakdown strength of 270 kV/cm, and the power density was 1.79 MW/cm 3 . Comparison with other lead-free dielectric ceramics confirmed the superior potential of CaTiO 3 -BiScO 3 ceramics for the design of ceramics capacitors for energy-storage applications. First-principles calculations revealed that Sc subsitution of Ti-site induced the atomic displacement of Ti ions in the whole crystal lattice, and lattice expansion was caused by variation of the bond angles and lenghths. Strong hybridization between O 2p and Ti 3d was observed in both valence band and conduction band; the hybridization between O 2p and Sc 3d at high conduction band was found to enlarge the band gap, and the static dielectric tensors were increased, which was the essential for the enhancement of polarization and dielectric properties.

  3. High-strain actuator materials based on dielectric elastomers

    DEFF Research Database (Denmark)

    Pelrine, R.; Kornbluh, R.; Kofod, G.

    2000-01-01

    Dielectric elastomers are a new class of actuator materials that exhibit excellent performance. The principle of operation, as well as methods to fabricate and test these elastomers, is summarized here. The Figure is a sketch of an elastomer film (light gray) stretched on a frame (black) and patt......Dielectric elastomers are a new class of actuator materials that exhibit excellent performance. The principle of operation, as well as methods to fabricate and test these elastomers, is summarized here. The Figure is a sketch of an elastomer film (light gray) stretched on a frame (black...

  4. High energy density, long life energy storage capacitor dielectric system

    International Nuclear Information System (INIS)

    Nichols, D.H.; Wilson, S.R.

    1977-01-01

    The evolution of energy storage dielectric systems shows a dramatic improvement in life and joule density, culminating in a 50% to 300% life improvement of polypropylene film-paper-phthalate ester over paper-castor oil depending on service. The physical and electrical drawbacks of castor oil are not present in the new system, allowing the capacitor designer to utilize the superior insulation resistance, dielectric strength, and corona resistance to full advantage. The result is longer life for equal joule density or greater joule density for equal life. Field service proof of the film-Geconol system superiority is based on 5 megajoule in operation and 16 megajoule on order

  5. A new soft dielectric silicone elastomer matrix with high mechanical integrity and low losses

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    Though dielectric elastomers (DEs) have many favourable properties, the issue of high driving voltages limits the commercial viability of the technology. Driving voltage can be lowered by decreasing the Young's modulus and increasing the dielectric permittivity of silicone elastomers. A decrease...... in Young's modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. A new soft elastomer matrix, with no loss of mechanical stability and high dielectric permittivity, was prepared through the use of alkyl chloride-functional siloxane copolymers...

  6. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    International Nuclear Information System (INIS)

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Cellulose triacetate, thin film dielectric capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  8. Development of High-Gradient Dielectric Laser-Driven Particle Accelerator Structures

    Energy Technology Data Exchange (ETDEWEB)

    Byer, Robert L. [Stanford Univ., CA (United States). Edward L. Ginzton Lab.

    2013-11-07

    The thrust of Stanford's program is to conduct research on high-gradient dielectric accelerator structures driven with high repetition-rate, tabletop infrared lasers. The close collaboration between Stanford and SLAC (Stanford Linear Accelerator Center) is critical to the success of this project, because it provides a unique environment where prototype dielectric accelerator structures can be rapidly fabricated and tested with a relativistic electron beam.

  9. Contamination aspects in integrating high dielectric constant and ferroelectric materials into CMOS processes

    OpenAIRE

    Boubekeur, Hocine

    2004-01-01

    n memory technology, new materials are being intensively investigated to overcome the integration limits of conventional dielectrics for Giga-bit scale integration, or to be able to produce new types of non-volatile low power memories such as FeRAM. Perovskite type high dielectric constant films for use in Giga-bit scale memories or layered perovskite films for use in non-volatile memories involve materials to semiconductor process flows, which entail a high risk of contamination. The introdu...

  10. Modeling of leakage currents in high-k dielectrics

    International Nuclear Information System (INIS)

    Jegert, Gunther Christian

    2012-01-01

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO 2 material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO 2 /TiN capacitor structures were suggested and problem areas that may

  11. Modeling of leakage currents in high-k dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Jegert, Gunther Christian

    2012-03-15

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO{sub 2} material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO{sub 2}/TiN capacitor structures were suggested and problem areas

  12. A new protection system against high voltage vacuum breakdowns developed for the Tore Supra neutral beam injector prototype

    International Nuclear Information System (INIS)

    Fumelli, M.; Jequier, F.; Pamela, J.

    1988-01-01

    A passive protection system against high voltage vacuum breakdowns has been developed. This system is based on the principle of oscillatory discharges in an RLC circuit coupled with the use of a diode. It allows the interruption of a vacuum breakdown in a few milliseconds. This study has been made for protecting some parts of the neutral beam injectors of the Tore Supra Tokamak experiment, but its field of application should be quite large. The conception of the whole high voltage electrical circuit developed for the Tore Supra injector prototype experiments is also presented

  13. The Studies of a Vacuum Gap Breakdown after High-Current Arc Interruption with Increasing the Voltage

    Science.gov (United States)

    Schneider, A. V.; Popov, S. A.; Batrakov, A. V.; Dubrovskaya, E. L.; Lavrinovich, V. A.

    2017-12-01

    Vacuum-gap breakdown has been studied after high-current arc interruption with a subsequent increase in the transient recovery voltage across a gap. The effects of factors, such as the rate of the rise in the transient voltage, the potential of the shield that surrounds a discharge gap, and the arc burning time, have been determined. It has been revealed that opening the contacts earlier leads to the formation of an anode spot, which is the source of electrode material vapors into the discharge gap after current zero moment. Under the conditions of increasing voltage, this fact results in the breakdown. Too late opening leads to the breakdown of a short gap due to the high electric fields.

  14. High pressure dielectric studies on the structural and orientational glass.

    Science.gov (United States)

    Kaminska, E; Tarnacka, M; Jurkiewicz, K; Kaminski, K; Paluch, M

    2016-02-07

    High pressure dielectric studies on the H-bonded liquid D-glucose and Orientationally Disordered Crystal (ODIC) 1,6-anhydro-D-glucose (levoglucosan) were carried out. It was shown that in both compounds, the structural relaxation is weakly sensitive to compression. It is well reflected in the low pressure coefficient of the glass transition and orientational glass transition temperatures which is equal to 60 K/GPa for both D-glucose and 1,6-anhydro-D-glucose. Although it should be noted that ∂Tg(0)/∂p evaluated for the latter compound seems to be enormously high with respect to other systems forming ODIC phase. We also found that the shape of the α-loss peak stays constant for the given relaxation time independently on the thermodynamic condition. Consequently, the Time Temperature Pressure (TTP) rule is satisfied. This experimental finding seems to be quite intriguing since the TTP rule was shown to work well in the van der Waals liquids, while in the strongly associating compounds, it is very often violated. We have also demonstrated that the sensitivity of the structural relaxation process to the temperature change measured by the steepness index (mp) drops with pressure. Interestingly, this change is much more significant in the case of D-glucose with respect to levoglucosan, where the fragility changes only slightly with compression. Finally, kinetics of ODIC-crystal phase transition was studied at high compression. It is worth mentioning that in the recent paper, Tombari and Johari [J. Chem. Phys. 142, 104501 (2015)] have shown that ODIC phase in 1,6-anhydro-D-glucose is stable in the wide range of temperatures and there is no tendency to form more ordered phase at ambient pressure. On the other hand, our isochronal measurements performed at varying thermodynamic conditions indicated unquestionably that the application of pressure favors solid (ODIC)-solid (crystal) transition in 1,6-anhydro-D-glucose. This result mimics the impact of pressure on the

  15. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    International Nuclear Information System (INIS)

    Luo Jun; Zhao Sheng-Lei; Mi Min-Han; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei; Hou Bin

    2016-01-01

    The effects of gate length L G on breakdown voltage V BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L G = 1 μm∼ 20 μm. With the increase of L G , V BR is first increased, and then saturated at L G = 3 μm. For the HEMT with L G = 1 μm, breakdown voltage V BR is 117 V, and it can be enhanced to 148 V for the HEMT with L G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L G > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L G = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. (paper)

  16. Terahertz polarization converter based on all-dielectric high birefringence metamaterial with elliptical air holes

    KAUST Repository

    Zi, Jianchen

    2018-02-15

    Metamaterials have been widely applied in the polarization conversion of terahertz (THz) waves. However, common plasmonic metamaterials usually work as reflective devices and have low transmissions. All-dielectric metamaterials can overcome these shortcomings. An all-dielectric metamaterial based on silicon with elliptical air holes is reported to achieve high artificial birefringence at THz frequencies. Simulations show that with appropriate structural parameters the birefringence of the dielectric metamaterial can remain flat and is above 0.7 within a broad band. Moreover, the metamaterial can be designed as a broadband quarter wave plate. A sample metamaterial was fabricated and tested to prove the validity of the simulations, and the sample could work as a quarter wave plate at 1.76 THz. The all-dielectric metamaterial that we proposed is of great significance for high performance THz polarization converters.

  17. Optical design for increased interaction length in a high gradient dielectric laser accelerator

    OpenAIRE

    Cesar, D.; Maxson, J.; Musumeci, P.; Shen, X.; England, R. J.; Wootton, K. P.

    2018-01-01

    We present a methodology for designing and measuring pulse front tilt in an ultrafast laser for use in dielectric laser acceleration. Previous research into dielectric laser accelerating modules has focused on measuring high accelerating gradients in novel structures, but has done so only for short electron-laser coupling lengths. Here we demonstrate an optical design to extend the laser-electron interaction to 1mm.

  18. High-frequency dielectric properties of nanocomposite and ceramic titanates

    Czech Academy of Sciences Publication Activity Database

    Rinkevich, A.B.; Kuznetsov, E. A.; Perov, D.V.; Bovtun, Viktor; Kempa, Martin; Nuzhnyy, Dmitry; Savinov, Maxim; Samoilovich, M.I.; Klescheva, S.M.; Ryabkov, Y.I.; Tsvetkova, E.V.

    2015-01-01

    Roč. 14, č. 3 (2015), s. 585-592 ISSN 1536-125X R&D Projects: GA ČR GAP204/12/0232 Institutional support: RVO:68378271 Keywords : electromagnetic waveguide * opal matrix * transmission and reflection coefficients * microwave conductivity * dielectric spectra Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.702, year: 2015

  19. Increasing break-down strength of the support colomn of high-voltage accelerators

    International Nuclear Information System (INIS)

    Rezvykh, K.A.; Romanov, V.A.

    1981-01-01

    Calculation results of strength of electric field of the EG-2.5 electrostatic accelerator for the support colomn with electrodes of circular and elliptical transverse cross sections are presented. Conducted is the choice of constructing the column under the condition that the dimensions of the tank, high-voltage electrode, step between the sections and internal diameter of the colomn electrodes are not changed. The potential at the high-voltage electrode equals 2.5 MV while the average longitudinal gradient of the colomn field equals 1.25 MV/m. The support insulation colomn of the high-voltage accelerator screened by rings with transverse cross section in the form of orientation oval in some accelerators promotes obtaining higher operating voltage and at the same time increase of operation reliability at the rest unchanged dimensions of the plant because the probability of break-down between the support colomn and the tank wall decreases. The latter is especially significant for most high-energy accelerators as well as for accelerators used in national economy [ru

  20. THE METHODS OF CALCULATIONS OF THE TEMPERATURE BREAKDOWN FIELD IN THE LINE OF THE MODEM HIGH-SPEED WIRE MILL

    Directory of Open Access Journals (Sweden)

    S. M. Zhuchkov

    2007-01-01

    Full Text Available The calculation methods of the temperature field of the breakdown, being rolled in lines of the modern high-speed wire mill, is developed on the basis of solving of problem of the contact exchange of hot metal with cold rollers.

  1. High-κ gate dielectrics: Current status and materials properties considerations

    Science.gov (United States)

    Wilk, G. D.; Wallace, R. M.; Anthony, J. M.

    2001-05-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward successful integration into the expected processing conditions for future CMOS technologies, especially due to their tendency to form at interfaces with Si (e.g. silicates). These pseudobinary systems also thereby enable the use of other high-κ materials by serving as an interfacial high-κ layer. While work is ongoing, much research is still required, as it is clear that any material which is to replace SiO2 as the gate dielectric faces a formidable challenge. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  2. Computational Fluid Dynamics Investigation of Vortex Breakdown for a Delta Wing at High Angle of Attack

    National Research Council Canada - National Science Library

    Freeman, Jacob

    2003-01-01

    ... (a) in preparation for investigation of active control of vortex breakdown using steady, along- core blowing A flat delta-shaped half-wing with sharp leading edge and sweep angle of 600 was modeled...

  3. Cable Insulation Breakdowns in the Modulator with a Switch Mode High Voltage Power Supply

    CERN Document Server

    Cours, A

    2004-01-01

    The Advanced Photon Source modulators are PFN-type pulsers with 40 kV switch mode charging power supplies (PSs). The PS and the PFN are connected to each other by 18 feet of high-voltage (HV) cable. Another HV cable connects two separate parts of the PFN. The cables are standard 75 kV x-ray cables. All four cable connectors were designed by the PS manufacturer. Both cables were operating at the same voltage level (about 35 kV). The PS’s output connector has never failed during five years of operation. One of the other three connectors failed approximately five times more often than the others. In order to resolve the failure problem, a transient analysis was performed for all connectors. It was found that transient voltage in the connector that failed most often was subjected to more high-frequency, high-amplitude AC components than the other three connectors. It was thought that these components caused partial discharge in the connector insulation and led to the insulation breakdown. Modification o...

  4. Enhanced dielectric-wall linear accelerator

    Science.gov (United States)

    Sampayan, Stephen E.; Caporaso, George J.; Kirbie, Hugh C.

    1998-01-01

    A dielectric-wall linear accelerator is enhanced by a high-voltage, fast e-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  5. Silicone elastomers with superior softness and dielectric properties

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Zakaria, Shamsul Bin

    Dielectric elastomers (DEs) change their shape and size under a high voltage or reversibly generate a high voltage when deformed. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young......’s modulus and increasing the dielectric permittivity of silicone elastomers. One such prominent method of modifying the properties is by adding suitable additives. [1] The major drawbacks for adding solid fillers are agglomeration and increasing stiffness which is often accompanied by the decrease...... were determined by NMR and morphology structures were investigated by optical microscopy. The resulting elastomers were evaluated with respect to their dielectric permittivity, tear and tensile strengths, as well as electrical breakdown.The breakdown strength increased at low amounts of additives...

  6. 4f-5d hybridization in a high k dielectric

    International Nuclear Information System (INIS)

    Losovyj, Ya.B.; Tang, Jinke; Wang, Wendong; Hong Yuanjia; Palshin, Vadim; Tittsworth, Roland

    2006-01-01

    While intra-atomic f-d hybridization is expected, experimental confirmation of f-d hybridization in the photoemission final state leading to 4f band structure has been limited to 5f systems and compound systems with very shallow 4f levels. We demonstrate that core 4f states can contribute to the valence band structure in a wide band gap dielectric, in this case HfO 2 in the photoemission final state. In spite of the complications of sample charging, we find evidence of symmetry in the shallow 4f levels and wave vector dependent band dispersion, the latter consistent with the crystal structure of HfO 2

  7. Off Axis Growth of Strontium Titanate Films with High Dielectric Constant Tuning and Low Loss

    Science.gov (United States)

    Kampangkeaw, Satreerat

    2002-03-01

    Using off-axis pulsed laser deposition, we have grown strontium titanate (STO) films on neodymium gallate (NGO) and lanthanum aluminate (LAO) substrates. We measured the film dielectric constant and loss tangent as a function of temperature in the 10kHz to 1 MHz frequency range. We found that the loss is less than 0.01 We also obtained a figure of merit from the relative variation of the dielectric constant divided by the loss tangent. The obtained figured of merit at 35K and 1MHz is about 1000 comparable to bulk values. The dielectric constant of these films can be changed by a factor of 4-8 in the presence of a DC electric field up to 5V/μm. The films show significant variations of dielectric properties grown on different substrates at different locations respect to the axis of the plume. The STO films on LAO having high dielectric constant and dielectric tuning were grown in region near the center of the plume. On the other hand, STO on NGO shows this effect only on the films grown far from the plume axis.

  8. Soft Functional Silicone Elastomers with High Dielectric Permittivty: Simple Additives vs. Cross-Linked Synthesized Copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

    Though dielectric elastomers (DEs) have many favorable properties, the issue of high driving voltages limits the commercial viability of the technology. Improved actuation at lower voltages can be obtained by decreasing the Young’s modulus and/or decreasing the dielectric permittivity of the elas......Though dielectric elastomers (DEs) have many favorable properties, the issue of high driving voltages limits the commercial viability of the technology. Improved actuation at lower voltages can be obtained by decreasing the Young’s modulus and/or decreasing the dielectric permittivity...... of the elastomer. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE whereas addition of high permittivity fillers such as metal oxides often increases Young’s modulus such that improved actuation is not accomplished. New soft...... silicone elastomers with high dielectric permittivity were prepared through the use of chloropropyl-functional silicones. One method was through the synthesis of modular cross-linkable chloropropyl-functional copolymers that allow for a high degree of chemical freedom such that a tuneable silicone...

  9. Thermodynamic efficiency of synthesis, storage and breakdown of the high-energy metabolites by photosynthetic microalgae

    International Nuclear Information System (INIS)

    Sorgüven, Esra; Özilgen, Mustafa

    2013-01-01

    Lipids and carbohydrates are employed in the nature to store internal energy due to the large number of the high energy atomic bonds in their structure. Internal energy stored in the bonds is used to fuel work producing engines or metabolic activity of living organisms. This paper investigates the thermodynamic efficiency of the glucose and lipid synthesis and breakdown by photosynthetic microalgae. Photosynthetic microalgae are able to convert 3.8% of the solar exergy into the chemical exergy of algal lipid. As the microalgae convert the first product of the photosynthesis, i.e. glucose, into lipid, 47–49% of the chemical exergy is lost. If the microalgal cell consumes the photosynthetically produced glucose for its own energy demand, then about 30% of the glucose exergy can be converted into work potential in case of immediate and short-term energy demands. Organism can convert about 22% of the glucose exergy into work potential after a long-term storage. If the algal lipid is harvested for biodiesel production and the produced biodiesel is combusted in a Diesel engine, then about 17% of the exergy of the photosynthetically produced glucose can be converted into useful work. Biodiesel is among the most popular renewable fuels. The lipids are harvested from their storage in the cells to produce biodiesel before following the lipid breakdown path of the cellular metabolism. Our analysis indicates that, extracting the first product of photosynthesis, i.e. glucose or glucose polymers instead of lipids may be more efficient thermodynamically, if new motors capable to extract their bond energy is developed. - Highlights: • Photosynthetic microalgae convert 3.8% of the solar exergy into the chemical exergy of algal lipid. • Converting the first product of the photosynthesis (glucose) into lipid causes 47–49% of exergy loss. • Organism can convert 30% of the glucose exergy into work potential for its own immediate or short-term energy demand. • Organism can

  10. Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

    Science.gov (United States)

    Scarisoreanu, N. D.; Craciun, F.; Birjega, R.; Ion, V.; Teodorescu, V. S.; Ghica, C.; Negrea, R.; Dinescu, M.

    2016-05-01

    BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ priced target.

  11. Gas breakdown in tokamaks

    International Nuclear Information System (INIS)

    Abramov, V.A.; Pogutse, O.P.; Yurchenko, Eh.I.

    1975-01-01

    The initial stage of the charge development in a tokomak is considered theoretically. It is supposed that all electrons produced in neutral gas ionisation process are in the regime of an almost continuous acceleration. The production time of a given electron density is calculated as a function of the neutral gas density and of parameters of the vortex electric field. The mechanism of plasma escape on walls is considered. It is shown that the escaping time is defined by a specific inertial flow of plasma and depends on whether chamber walls are metal or dielectric. The criterion of the gas breakdown in a toroidal system is formulated. The developed theory is shown to explain a strong dependence of the breakdown on the gas initial density [ru

  12. Atomistic self-sputtering mechanisms of rf breakdown in high-gradient linacs

    International Nuclear Information System (INIS)

    Insepov, Z.; Norem, J.; Veitzer, S.

    2010-01-01

    Molecular dynamics (MD) models of sputtering solid and liquid surfaces - including the surfaces charged by interaction with plasma, Coulomb explosion, and Taylor cone formation - were developed. MD simulations of self-sputtering of a crystalline (1 0 0) copper surface by Cu + ions in a wide range of ion energies (50 eV-50 keV) were performed. In order to accommodate energetic ion impacts on a target, a computational model was developed that utilizes MD to simulate rapid atomic collisions in the central impact zone, and a finite-difference method to absorb the energy and shock wave for the collisional processes occurring at a longer time scales. The sputtering yield increases if the surface temperature rises and the surface melts as a result of heat from plasma. Electrostatic charging of the surface under bombardment with plasma ions is another mechanism that can dramatically increase the sputtering yield because it reduces the surface binding energy and the surface tension. An MD model of Taylor cone formation at a sharp tip placed in a high electric field was developed, and the model was used to simulate Taylor cone formation for the first time. Good agreement was obtained between the calculated Taylor cone angle (104.3 deg.) and the experimental one (98.6 deg.). A Coulomb explosion (CE) was proposed as the main surface failure mechanism triggering breakdown, and the dynamics of CE was studied by MD.

  13. Nanocomposites of TiO2/cyanoethylated cellulose with ultra high dielectric constants

    International Nuclear Information System (INIS)

    Madusanka, Nadeesh; Shivareddy, Sai G; Hiralal, Pritesh; Choi, Youngjin; Amaratunga, Gehan A J; Eddleston, Mark D; Oliver, Rachel A

    2016-01-01

    A novel dielectric nanocomposite containing a high permittivity polymer, cyanoethylated cellulose (CRS) and TiO 2 nanoparticles was successfully prepared with different weight percentages (10%, 20% and 30%) of TiO 2 . The intermolecular interactions and morphology within the polymer nanocomposites were analysed. TiO 2 /CRS nanofilms on SiO 2 /Si wafers were used to form metal–insulator–metal type capacitors. Capacitances and loss factors in the frequency range of 1 kHz–1 MHz were measured. At 1 kHz CRS-TiO 2 nanocomposites exhibited ultra high dielectric constants of 118, 176 and 207 for nanocomposites with 10%, 20% and 30% weight of TiO 2 respectively, significantly higher than reported values of pure CRS (21), TiO 2 (41) and other dielectric polymer-TiO 2 nanocomposite films. Furthermore, all three CRS-TiO 2 nanocomposites show a loss factor <0.3 at 1 kHz and low leakage current densities (10 −6 –10 −7 A cm −2 ). Leakage was studied using conductive atomic force microscopy and it was observed that the leakage is associated with TiO 2 nanoparticles embedded in the CRS polymer matrix. A new class of ultra high dielectric constant hybrids using nanoscale inorganic dielectrics dispersed in a high permittivity polymer suitable for energy management applications is reported. (paper)

  14. Enhanced performance in capacitive force sensors using carbon nanotube/polydimethylsiloxane nanocomposites with high dielectric properties

    Science.gov (United States)

    Jang, Hyeyoung; Yoon, Hyungsuk; Ko, Youngpyo; Choi, Jaeyoo; Lee, Sang-Soo; Jeon, Insu; Kim, Jong-Ho; Kim, Heesuk

    2016-03-01

    Force sensors have attracted tremendous attention owing to their applications in various fields such as touch screens, robots, smart scales, and wearable devices. The force sensors reported so far have been mainly focused on high sensitivity based on delicate microstructured materials, resulting in low reproducibility and high fabrication cost that are limitations for wide applications. As an alternative, we demonstrate a novel capacitive-type force sensor with enhanced performance owing to the increased dielectric properties of elastomers and simple sensor structure. We rationally design dielectric elastomers based on alkylamine modified-multi-walled carbon nanotube (MWCNT)/polydimethylsiloxane (PDMS) composites, which have a higher dielectric constant than pure PDMS. The alkylamine-MWCNTs show excellent dispersion in a PDMS matrix, thus leading to enhanced and reliable dielectric properties of the composites. A force sensor array fabricated with alkylamine-MWCNT/PDMS composites presents an enhanced response due to the higher dielectric constant of the composites than that of pure PDMS. This study is the first to report enhanced performance of capacitive force sensors by modulating the dielectric properties of elastomers. We believe that the disclosed strategy to improve the sensor performance by increasing the dielectric properties of elastomers has great potential in the development of capacitive force sensor arrays that respond to various input forces.Force sensors have attracted tremendous attention owing to their applications in various fields such as touch screens, robots, smart scales, and wearable devices. The force sensors reported so far have been mainly focused on high sensitivity based on delicate microstructured materials, resulting in low reproducibility and high fabrication cost that are limitations for wide applications. As an alternative, we demonstrate a novel capacitive-type force sensor with enhanced performance owing to the increased

  15. Performance of dielectric nanocomposites: matrix-free, hairy nanoparticle assemblies and amorphous polymer-nanoparticle blends.

    Science.gov (United States)

    Grabowski, Christopher A; Koerner, Hilmar; Meth, Jeffrey S; Dang, Alei; Hui, Chin Ming; Matyjaszewski, Krzysztof; Bockstaller, Michael R; Durstock, Michael F; Vaia, Richard A

    2014-12-10

    Demands to increase the stored energy density of electrostatic capacitors have spurred the development of materials with enhanced dielectric breakdown, improved permittivity, and reduced dielectric loss. Polymer nanocomposites (PNCs), consisting of a blend of amorphous polymer and dielectric nanofillers, have been studied intensely to satisfy these goals; however, nanoparticle aggregates, field localization due to dielectric mismatch between particle and matrix, and the poorly understood role of interface compatibilization have challenged progress. To expand the understanding of the inter-relation between these factors and, thus, enable rational optimization of low and high contrast PNC dielectrics, we compare the dielectric performance of matrix-free hairy nanoparticle assemblies (aHNPs) to blended PNCs in the regime of low dielectric contrast to establish how morphology and interface impact energy storage and breakdown across different polymer matrices (polystyrene, PS, and poly(methyl methacrylate), PMMA) and nanoparticle loadings (0-50% (v/v) silica). The findings indicate that the route (aHNP versus blending) to well-dispersed morphology has, at most, a minor impact on breakdown strength trends with nanoparticle volume fraction; the only exception being at intermediate loadings of silica in PMMA (15% (v/v)). Conversely, aHNPs show substantial improvements in reducing dielectric loss and maintaining charge/discharge efficiency. For example, low-frequency dielectric loss (1 Hz-1 kHz) of PS and PMMA aHNP films was essentially unchanged up to a silica content of 50% (v/v), whereas traditional blends showed a monotonically increasing loss with silica loading. Similar benefits are seen via high-field polarization loop measurements where energy storage for ∼15% (v/v) silica loaded PMMA and PS aHNPs were 50% and 200% greater than respective comparable PNC blends. Overall, these findings on low dielectric contrast PNCs clearly point to the performance benefits of

  16. Abnormal breakdown characteristic in a two-phase mixture

    International Nuclear Information System (INIS)

    Ye Qizheng; Li Jin; Lu Fei

    2006-01-01

    A two-phase mixture (TPM) is a mixture of gas and macroparticles of high concentration. Based on Townsend's theory, a new cell-iterative model in analytical form for the breakdown mechanism in TPM is presented. Compared with the original cell-iterative model in our previous paper, the obstructive factor of the macroparticles that influences the electron avalanche propagation is considered, except for the macroparticles distorting the electrical field and capture of the electrons. The cell attractive parameter k is presented according to the classical continuum theory for field charging. The modified Paschen law for a TPM is presented to calculate the breakdown voltage. The breakdown voltage of the TPM, U TPM , increases gradually with an increase in the macroparticle number density (m). The voltage U TPM is lower than that of the pure gas at low m values and larger at high m values. With a decrease of the macroparticle volume fraction and the dielectric mismatch, the voltage U TPM increases gradually at low m values and decreases gradually at high m values. The voltage U TPM at pd 200 cm Torr is lower than that at pd = 760 cm Torr for low m values and larger for high m values. This kind of abnormal breakdown characteristic in the TPM occurs in the case of high macroparticle volume fraction. On the other hand, the minimum of the TPM's Paschen curve increases with increase in m. It provides the possibility and the conditions of greatly increasing the breakdown voltage in a nearly uniform field

  17. High temperature dielectric studies of indium-substituted NiCuZn nanoferrites

    Science.gov (United States)

    Hashim, Mohd.; Raghasudha, M.; Shah, Jyoti; Shirsath, Sagar E.; Ravinder, D.; Kumar, Shalendra; Meena, Sher Singh; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

    2018-01-01

    In this study, indium (In3+)-substituted NiCuZn nanostructured ceramic ferrites with a chemical composition of Ni0.5Cu0.25Zn0.25Fe2-xInxO4 (0.0 ≤ x ≤ 0.5) were prepared by chemical synthesis involving sol-gel chemistry. Single phased cubic spinel structure materials were prepared successfully according to X-ray diffraction and transmission electron microscopy analyses. The dielectric properties of the prepared ferrites were measured using an LCR HiTester at temperatures ranging from room temperature to 300 °C at different frequencies from 102 Hz to 5 × 106 Hz. The variations in the dielectric parameters ε‧ and (tanδ) with temperature demonstrated the frequency- and temperature-dependent characteristics due to electron hopping between the ions. The materials had low dielectric loss values in the high frequency range at all temperatures, which makes them suitable for high frequency microwave applications. A qualitative explanation is provided for the dependences of the dielectric constant and dielectric loss tangent on the frequency, temperature, and composition. Mӧssbauer spectroscopy was employed at room temperature to characterize the magnetic behavior.

  18. High-Efficiency Dielectric Metasurfaces for Polarization-Dependent Terahertz Wavefront Manipulation

    KAUST Repository

    Zhang, Huifang

    2017-11-30

    Recently, metasurfaces made up of dielectric structures have drawn enormous attentions in the optical and infrared regimes due to their high efficiency and designing freedom in manipulating light propagation. Such advantages can also be introduced to terahertz frequencies where efficient functional devices are still lacking. Here, polarization-dependent all-silicon terahertz dielectric metasurfaces are proposed and experimentally demonstrated. The metasurfaces are composed of anisotropic rectangular-shaped silicon pillars on silicon substrate. Each metasurface holds dual different functions depending on the incident polarizations. Furthermore, to suppress the reflection loss and multireflection effect in practical applications, a high-performance polarization-independent antireflection silicon pillar array is also proposed, which can be patterned at the other side of the silicon substrate. Such all-silicon dielectric metasurfaces are easy to fabricate and can be very promising in developing next-generation efficient, compact, and low-cost terahertz functional devices.

  19. Role of secondary emission on discharge dynamics in an atmospheric pressure dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Tay, W. H.; Kausik, S. S.; Yap, S. L.; Wong, C. S., E-mail: cswong@um.edu.my [Plasma Technology Research Centre, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2014-04-15

    The discharge dynamics in an atmospheric pressure dielectric barrier discharge (DBD) is studied in a DBD reactor consisting of a pair of stainless steel parallel plate electrodes. The DBD discharge has been generated by a 50 Hz ac high voltage power source. The high-speed intensified charge coupled device camera is used to capture the images of filaments occurring in the discharge gap. It is observed that frequent synchronous breakdown of micro discharges occurs across the discharge gap in the case of negative current pulse. The experimental results reveal that secondary emissions from the dielectric surface play a key role in the synchronous breakdown of plasma filaments.

  20. Design of High Voltage Electrical Breakdown Strength measuring system at 1.8K with a G-M cryocooler

    Science.gov (United States)

    Li, Jian; Huang, Rongjin; Li, Xu; Xu, Dong; Liu, Huiming; Li, Laifeng

    2017-09-01

    Impregnating resins as electrical insulation materials for use in ITER magnets and feeder system are required to be radiation stable, good mechanical performance and high voltage electrical breakdown strength. In present ITER project, the breakdown strength need over 30 kV/mm, for future DEMO reactor, it will be greater than this value. In order to develop good property insulation materials to satisfy the requirements of future fusion reactor, high voltage breakdown strength measurement system at low temperature is necessary. In this paper, we will introduce our work on the design of this system. This measuring system has two parts: one is an electrical supply system which provides the high voltage from a high voltage power between two electrodes; the other is a cooling system which consists of a G-M cryocooler, a superfluid chamber and a heat switch. The two stage G-M cryocooler pre-cool down the system to 4K, the superfluid helium pot is used for a container to depress the helium to superfluid helium which cool down the sample to 1.8K and a mechanical heat switch connect or disconnect the cryocooler and the pot. In order to provide the sufficient time for the test, the cooling system is designed to keep the sample at 1.8K for 300 seconds.

  1. High glycogen levels enhance glycogen breakdown in isolated contracting skeletal muscle

    DEFF Research Database (Denmark)

    Richter, Erik; Galbo, H

    1986-01-01

    and after 15 min of intermittent electrical muscle stimulation. Before stimulation, glycogen was higher in rats that swam on the preceding day (supercompensated rats) compared with controls. During muscle contractions, glycogen breakdown in fast-twitch red and white fibers was larger in supercompensated...

  2. Numerical study of the propagation of high power microwave pulses in air breakdown environment

    International Nuclear Information System (INIS)

    Kim, J.; Kuo, S.P.

    1992-01-01

    A theoretical model based on a set of two modal equations has been developed to describe self-consistently the propagation of an intense microwave pulse in an air breakdown environment. It includes Poynting's equation for the continuity of the power flux of the pulse and the rate equation of the electron density. A forward wave approximation is used to simplify Poynting's equation and a semi-empirical formula for the ionization frequency as a function of the wave field amplitude is adopted for this model. In order to improve the numerical efficiency of the model in terms of the required computation time and available subroutines for numerical analysis of pulse propagation over a long distance, a transformation to the frame of local time of the pulse is introduced. The effect of space-time dependence of the group velocity of the pulse is included in this properly designed transformation. The inhomogeneous feature of the background pressure is also preserved in the model. The resultant equations are reduced to the forms which can be solved directly by the available subroutine of ODE solver. In this work, a comprehensive numerical analysis of the propagation of high power microwave pulse through the atmosphere is performed. It is shown that the pulse energy can severely be attenuated by the self-generated plasma. Therefore, the aim of the present study is to identify the optimum parameters of the pulse so that the energy loss of the pulse before reaching the destination can be minimized. These parameters include the power, frequency, shape and length of the pulse. The conditions for maximizing the ionization at a destinated region in the upper atmosphere will also be determined

  3. Conductivity, dielectric behavior and FTIR studies of high molecular weight poly(vinylchloride)-lithium triflate polymer electrolytes

    International Nuclear Information System (INIS)

    Ramesh, S.; Chai, M.F.

    2007-01-01

    Thin films of high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF 3 SO 3 ) salt were prepared by solution casting method. The ionic conductivity and dielectric measurements were carried out on these films over a wide frequency regime at various temperatures. The conductivity-temperature plots were found to obey classical Arrhenius relationship. The dielectric behavior was analysed using dielectric permittivity and dielectric modulus of the samples. FTIR studies show some simple overlapping and shift in peaks between high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF 3 SO 3 ) salt in the polymer electrolyte complexes

  4. Conductivity, dielectric behavior and FTIR studies of high molecular weight poly(vinylchloride)-lithium triflate polymer electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Ramesh, S. [Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Setapak, 53300 Kuala Lumpur (Malaysia)]. E-mail: ramesh@mail.utar.edu.my; Chai, M.F. [Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Setapak, 53300 Kuala Lumpur (Malaysia)

    2007-05-15

    Thin films of high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF{sub 3}SO{sub 3}) salt were prepared by solution casting method. The ionic conductivity and dielectric measurements were carried out on these films over a wide frequency regime at various temperatures. The conductivity-temperature plots were found to obey classical Arrhenius relationship. The dielectric behavior was analysed using dielectric permittivity and dielectric modulus of the samples. FTIR studies show some simple overlapping and shift in peaks between high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF{sub 3}SO{sub 3}) salt in the polymer electrolyte complexes.

  5. High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

    Science.gov (United States)

    Yu, Byoung-Soo; Ha, Tae-Jun

    2018-04-01

    The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

  6. Discharge ignition near a dielectric

    NARCIS (Netherlands)

    Sobota, A.; Veldhuizen, van E.M.; Stoffels, W.W.

    2008-01-01

    Electrical breakdown in noble gas near a dielectric is an important issue in lighting industry. In order to investigate the influence of the dielectric on the ignition process, we perform measurements in argon, with pressure varying from 0.1 to 1 bar, using a pin–pin electrode geometry. Here, we

  7. Novel Arrangements for High Performance and Durable Dielectric Elastomer Actuation

    Directory of Open Access Journals (Sweden)

    Runan Zhang

    2016-07-01

    Full Text Available This paper advances the design of Rod Pre-strained Dielectric Elastomer Actuators (RP-DEAs in their capability to generate comparatively large static actuation forces with increased lifetime via optimized electrode arrangements. RP-DEAs utilize thin stiff rods to constrain the expansion of the elastomer and maintain the in-plane pre-strain in the rod longitudinal direction. The aim is to study both the force output and the durability of the RP-DEA. Initial design of the RP-DEA had poor durability, however, it generated significantly larger force compared with the conventional DEA due to the effects of pre-strain and rod constraints. The durability study identifies the in-electro-active-region (in-AR lead contact and the non-uniform deformation of the structure as causes of pre-mature failure of the RP-DEA. An optimized AR configuration is proposed to avoid actuating undesired areas in the structure. The results show that with the optimized AR, the RP-DEA can be effectively stabilized and survive operation at least four times longer than with a conventional electrode arrangement. Finally, a Finite Element simulation was also performed to demonstrate that such AR design and optimization can be guided by analyzing the DEA structure in the state of pre-activation.

  8. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  9. Manipulation of dielectric Rayleigh particles using highly focused elliptically polarized vector fields.

    Science.gov (United States)

    Gu, Bing; Xu, Danfeng; Rui, Guanghao; Lian, Meng; Cui, Yiping; Zhan, Qiwen

    2015-09-20

    Generation of vectorial optical fields with arbitrary polarization distribution is of great interest in areas where exotic optical fields are desired. In this work, we experimentally demonstrate the versatile generation of linearly polarized vector fields, elliptically polarized vector fields, and circularly polarized vortex beams through introducing attenuators in a common-path interferometer. By means of Richards-Wolf vectorial diffraction method, the characteristics of the highly focused elliptically polarized vector fields are studied. The optical force and torque on a dielectric Rayleigh particle produced by these tightly focused vector fields are calculated and exploited for the stable trapping of dielectric Rayleigh particles. It is shown that the additional degree of freedom provided by the elliptically polarized vector field allows one to control the spatial structure of polarization, to engineer the focusing field, and to tailor the optical force and torque on a dielectric Rayleigh particle.

  10. Do dielectric nanostructures turn metallic in high-electric dc fields?

    Science.gov (United States)

    Silaeva, E P; Arnoldi, L; Karahka, M L; Deconihout, B; Menand, A; Kreuzer, H J; Vella, A

    2014-11-12

    Three-dimensional dielectric nanostructures have been analyzed using field ion microscopy (FIM) to study the electric dc field penetration inside these structures. The field is proved to be screened within a few nanometers as theoretically calculated taking into account the high-field impact ionization process. Moreover, the strong dc field of the order of 0.1 V/Å at the surface inside a dielectric nanostructure modifies its band structure leading to a strong band gap shrinkage and thus to a strong metal-like optical absorption near the surface. This metal-like behavior was theoretically predicted using first-principle calculations and experimentally proved using laser-assisted atom probe tomography (APT). This work opens up interesting perspectives for the study of the performance of all field-effect nanodevices, such as nanotransistor or super capacitor, and for the understanding of the physical mechanisms of field evaporation of dielectric nanotips in APT.

  11. Structural-optical study of high-dielectric-constant oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, M.M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Luchena, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Toro, R.G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Malandrino, G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Fragala, I.L. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Nigro, R. Lo [Istituto di Microelettronica e Microsistemi, IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy)

    2006-10-31

    High-k polycrystalline Pr{sub 2}O{sub 3} and amorphous LaAlO{sub 3} oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr{sub 2}O{sub 3} films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO{sub 3} films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.

  12. Numerical simulation of high-energy-electron gerated field in dielectrics of various geometries. Final report, June 1, 1979-May 15, 1980

    International Nuclear Information System (INIS)

    Yee, K.S.

    1980-01-01

    It has been observed that the exposure of dielectrics to electron beams can produce an electric field of sufficient magnitude to cause dielectric breakdown. The present investigations will be directed to calculate the electric field intensity in dielectrics under spherical and cylindrical geometries. In the spherical geometry the method of multiple images renders the full numerical calculation unnecessary, whereas in a finite length cylindrical geometry the full numerical calculation seems to be inevitable. A description and results of the spherical geometry are presented and a more detailed presentation of the finite cylinder geometry is given

  13. Polypropylene/Polyaniline Nanofiber/Reduced Graphene Oxide Nanocomposite with Enhanced Electrical, Dielectric, and Ferroelectric Properties for a High Energy Density Capacitor.

    Science.gov (United States)

    Cho, Sunghun; Kim, Minkyu; Lee, Jun Seop; Jang, Jyongsik

    2015-10-14

    This work demonstrates a ternary nanocomposite system, composed of polypropylene (PP), redoped PANI (r-PANI) nanofibers, and reduced graphene oxides (RGOs), for use in a high energy density capacitor. r-PANI nanofibers were fabricated by the combination methods of chemical oxidation polymerization and secondary doping processes, resulting in higher conductivity (σ≈156 S cm(-1)) than that of the primarily doped PANI nanofibers (σ≈16 S cm(-1)). RGO sheets with high electron mobility and thermal stability can enhance the conductivity of r-PANI/RGO (σ≈220 S cm(-1)) and thermal stability of PP matrix. These findings could be extended to combine the advantages of r-PANI nanofibers and RGO sheets for developing an efficient means of preparing PP/r-PANI/RGO nanocomposite. When the r-PANI/RGO cofillers (10 vol %) were added to PP matrix, the resulting PP/r-PANI/RGO nanocomposite exhibited high dielectric constant (ε'≈51.8) with small dielectric loss (ε″≈9.3×10(-3)). Furthermore, the PP/r-PANI/RGO nanocomposite was used for an energy-harvesting device, which demonstrated high energy density (Ue≈12.6 J cm(-3)) and breakdown strength (E≈5.86×10(3) kV cm(-1)).

  14. Humidity effects on wire insulation breakdown strength.

    Energy Technology Data Exchange (ETDEWEB)

    Appelhans, Leah

    2013-08-01

    Methods for the testing of the dielectric breakdown strength of insulation on metal wires under variable humidity conditions were developed. Two methods, an ASTM method and the twisted pair method, were compared to determine if the twisted pair method could be used for determination of breakdown strength under variable humidity conditions. It was concluded that, although there were small differences in outcomes between the two testing methods, the non-standard method (twisted pair) would be appropriate to use for further testing of the effects of humidity on breakdown performance. The dielectric breakdown strength of 34G copper wire insulated with double layer Poly-Thermaleze/Polyamide-imide insulation was measured using the twisted pair method under a variety of relative humidity (RH) conditions and exposure times. Humidity at 50% RH and below was not found to affect the dielectric breakdown strength. At 80% RH the dielectric breakdown strength was significantly diminished. No effect for exposure time up to 140 hours was observed at 50 or 80%RH.

  15. Formation of ball streamers at a subnanosecond breakdown of gases at a high pressure in a nonuniform electric field

    Science.gov (United States)

    Beloplotov, D. V.; Tarasenko, V. F.; Sorokin, D. A.; Lomaev, M. I.

    2017-11-01

    The formation of a diffuse discharge plasma at a subnanosecond breakdown of a "cone-plane" gap filled with air, nitrogen, methane, hydrogen, argon, neon, and helium at various pressures has been studied. Nanosecond negative and positive voltage pulses have been applied to the conical electrode. The experimental data on the dynamics of plasma glow at the stage of formation and propagation of a streamer have been obtained with intensified charge-coupled device and streak cameras. It has been found that the formation of ball streamers is observed in all gases and at both polarities. A supershort avalanche electron beam has been detected behind the flat foil electrode in a wide range of pressures in the case of a negatively charged conical electrode. A mechanism of the formation of streamers at breakdown of various gases at high overvoltages has been discussed.

  16. ZnO as a cheap and effective filler for high breakdown strength elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    . In this article, we explore the use of a cheap and abundant metal oxide filler, namely ZnO, as a filler in silicone-based dielectric elastomers. The electro-mechanical properties of the elastomer composites are investigated, and their performance is evaluated by means of figures of merit. Various commercial...

  17. Thermosetting resins with high fractions of free volume and inherently low dielectric constants.

    Science.gov (United States)

    Lin, Liang-Kai; Hu, Chien-Chieh; Su, Wen-Chiung; Liu, Ying-Ling

    2015-08-18

    This work demonstrates a new class of thermosetting resins, based on Meldrum's acid (MA) derivatives, which have high fractions of free volume and inherently low k values of about 2.0 at 1 MHz. Thermal decomposition of the MA groups evolves CO2 and acetone to create air-trapped cavities so as to reduce the dielectric constants.

  18. Ab-initio study of the dielectric response of high-permittivity perovskites for energy storage

    International Nuclear Information System (INIS)

    Do-Amaral-De-Andrade-Sophia, Gustavo

    2014-01-01

    Many of materials based on transition metals have a wide range of applications, such as the storage of energy, due to their peculiar properties (high-dielectric constants, ferro-electricity,...). The knowledge of their bulk properties is essential in designing targeted devices with high performance. For instance, ABO 3 perovskites are peculiarly interesting for their atomic structural flexibility, allowing high number of atoms substitution and giving them specific chemical and electrical properties compared to the pure compounds. In this context, first principles calculations can be useful to understand the structural and electronic properties of these materials. The pressure-induced giant dielectric anomaly of ABO 3 perovskites has been investigated at the ab initio level. Its mechanism has been analyzed in terms of thermodynamic phase stability, structural and phonon contributions and Born effective charges. It is shown that the IR-active soft phonon is responsible for the anomaly. This mode always involves a displacement and a deformation of the oxygen octahedra, while the roles of A and B ions vary among the materials and between high- and low-pressure phase transitions. A sharp increase in the phonon amplitude near the phase transition gives rise to the dielectric anomaly. The use of hybrid functionals is required for agreement with experimental data. The calculations show that the dielectric anomaly in the pressure-induced phase transitions of these perovskites is a property of the bulk material. (author)

  19. Identifying dielectric and resistive electrode losses in high-density capacitors at radio frequencies

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Liu, J.; Klee, M.; Keur, W.; Mauczock, R.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2008-01-01

    A regression-based technique is presented which distinguishes the dielectric loss from the resistive loss of high density planar capacitors in a very wide bandwidth of 0.1–8 GHz. Moreover, the procedure yields useful results if the capacitor deviates from a lumped element model and indicates when

  20. Characterization of a dielectric phantom for high-field magnetic resonance imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Qi, E-mail: Qi.Duan@nih.gov; Duyn, Jeff H.; Gudino, Natalia; Zwart, Jacco A. de; Gelderen, Peter van [Advanced MRI Section, Laboratory of Functional and Molecular Imaging, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, Maryland 20892 (United States); Sodickson, Daniel K.; Brown, Ryan [The Bernard and Irene Schwartz Center for Biomedical Imaging, Department of Radiology, New York University School of Medicine, New York, New York 10016 (United States)

    2014-10-15

    Purpose: In this work, a generic recipe for an inexpensive and nontoxic phantom was developed within a range of biologically relevant dielectric properties from 150 MHz to 4.5 GHz. Methods: The recipe includes deionized water as the solvent, NaCl to primarily control conductivity, sucrose to primarily control permittivity, agar–agar to gel the solution and reduce heat diffusivity, and benzoic acid to preserve the gel. Two hundred and seventeen samples were prepared to cover the feasible range of NaCl and sucrose concentrations. Their dielectric properties were measured using a commercial dielectric probe and were fitted to a 3D polynomial to generate a recipe describing the properties as a function of NaCl concentration, sucrose concentration, and frequency. Results: Results indicated that the intuitive linear and independent relationships between NaCl and conductivity and between sucrose and permittivity are not valid. A generic polynomial recipe was developed to characterize the complex relationship between the solutes and the resulting dielectric values and has been made publicly available as a web application. In representative mixtures developed to mimic brain and muscle tissue, less than 2% difference was observed between the predicted and measured conductivity and permittivity values. Conclusions: It is expected that the recipe will be useful for generating dielectric phantoms for general magnetic resonance imaging (MRI) coil development at high magnetic field strength, including coil safety evaluation as well as pulse sequence evaluation (including B{sub 1}{sup +} mapping, B{sub 1}{sup +} shimming, and selective excitation pulse design), and other non-MRI applications which require biologically equivalent dielectric properties.

  1. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  2. Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies

    International Nuclear Information System (INIS)

    Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.

    2011-01-01

    Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).

  3. Bimodal condensation silicone elastomers as dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Skov, Anne Ladegaard

    Lately, dielectric elastomers (DEs) which consist of an elastomer sandwiched between electrodes on both sides, have gained interest as materials for actuators, generators, and sensors. An ideal elastomer for DE uses is characterized by high extensibility, flexibility and good mechanical fatigue...... elastomers were prepared by mixing different mass ratios (9:1, 8:2, 7:3, 6:4, 5:5, 4:6) between long polydimethylsiloxane (PDMS) chains and short PDMS chains. The resulting elastomers were investigated with respect to their rheology, dielectric properties, tensile strength, electrical breakdown, as well.......Moreover, a series of elastomers with the same mass ratio (7:3) between long and short PDMS chains were made at different humidity (90%, 70%, 50%, 30%, 10%) at 23oC. The dielectric and mechincal properties of the resulting elastomers were shown to depend strongly on the atmospheric humidity level.In addition...

  4. High dielectric constant and energy density induced by the tunable TiO2 interfacial buffer layer in PVDF nanocomposite contained with core-shell structured TiO2@BaTiO3 nanoparticles

    Science.gov (United States)

    Hu, Penghao; Jia, Zhuye; Shen, Zhonghui; Wang, Peng; Liu, Xiaoru

    2018-05-01

    To realize application in high-capacity capacitors and portable electric devices, large energy density is eagerly desired for polymer-based nanocomposite. The core-shell structured nanofillers with inorganic buffer layer are recently supposed to be promising in improving the dielectric property of polymer nanocomposite. In this work, core-shell structured TO@BT nanoparticles with crystalline TiO2 buffer layer coated on BaTiO3 nanoparticle were fabricated via solution method and heat treatment. The thickness of the TO buffer layer can be tailored by modulating the additive amount of the titanate coupling agent in preparation process, and the apparent dielectric properties of nanocomposite are much related to the thickness of the TO layer. The relatively thin TO layer prefer to generate high polarization to increase dielectric constant while the relatively thick TO layer would rather to homogenize field to maintain breakdown strength. Simulation of electric field distribution in the interfacial region reveals the improving effect of the TO buffer layer on the dielectric properties of nanocomposite which accords with the experimental results well. The optimized nanoparticle TO@BT-2 with a mean thickness of 3-5 nm buffer layer of TO is effective in increasing both the ε and Eb in the PVDF composite film. The maximal discharged energy density of 8.78 J/cm3 with high energy efficiency above 0.6 is obtained in TO@BT-2/PVDF nanocomposite with 2.5 vol% loading close to the breakdown strength of 380 kV/mm. The present study demonstrates the approach to optimize the structure of core-shell nanoparticles by modulating buffer layer and provides a new way to further enlarge energy density in polymer nanocomposite.

  5. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  6. Study of high-k gate dielectrics by means of positron annihilation

    International Nuclear Information System (INIS)

    Uedono, A.; Naito, T.; Otsuka, T.; Ito, K.; Shiraishi, K.; Yamabe, K.; Miyazaki, S.; Watanabe, H.; Umezawa, N.; Hamid, A.; Chikyow, T.; Ohdaira, T.; Suzuki, R.; Ishibashi, S.; Inumiya, S.; Kamiyama, S.; Akasaka, Y.; Nara, Y.; Yamada, K.

    2007-01-01

    High-dielectric constant (high-k) gate materials, such as HfSiO x and HfAlO x , fabricated by atomic-layer-deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons indicated that positrons annihilated from the trapped state by open volumes that exist intrinsically in amorphous structures of the films. The size distributions of the open volumes and the local atomic configurations around such volumes can be discussed using positron annihilation parameters, and they were found to correlate with the electrical properties of the films. We confirmed that the positron annihilation is useful technique to characterize the matrix structure of amorphous high-k materials, and can be used to determine process parameters for the fabrication of high-k gate dielectrics. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. HIGH-GRADIENT, HIGH-TRANSFORMER-RATIO, DIELECTRIC WAKE FIELD ACCELERATOR

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay L

    2012-04-12

    The Phase I work reported here responds to DoE'ss stated need "...to develop improved accelerator designs that can provide very high gradient (>200 MV/m for electrons...) acceleration of intense bunches of particles." Omega-P's approach to this goal is through use of a ramped train of annular electron bunches to drive a coaxial dielectric wakefield accelerator (CDWA) structure. This approach is a direct extension of the CDWA concept from acceleration in wake fields caused by a single drive bunch, to the more efficient acceleration that we predict can be realized from a tailored (or ramped) train of several drive bunches. This is possible because of a much higher transformer ratio for the latter. The CDWA structure itself has a number of unique features, including: a high accelerating gradient G, potentially with G > 1 GeV/m; continuous energy coupling from drive to test bunches without transfer structures; inherent transverse focusing forces for particles in the accelerated bunch; highly stable motion of high charge annular drive bunches; acceptable alignment tolerances for a multi-section system. What is new in the present approach is that the coaxial dielectric structure is now to be energized by-not one-but by a short train of ramped annular-shaped drive bunches moving in the outer coaxial channel of the structure. We have shown that this allows acceleration of an electron bunch traveling along the axis in the inner channel with a markedly higher transformer ratio T than for a single drive bunch. As described in this report, the structure will be a GHz-scale prototype with cm-scale transverse dimensions that is expected to confirm principles that can be applied to the design of a future THz-scale high gradient (> 500 MV/m) accelerator with mm-scale transverse dimensions. We show here a new means to significantly increase the transformer ratio T of the device, and thereby to significantly improve its suitability as a flexible and effective component in

  8. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  9. Degradation patterns of silicone-based dielectric elastomers in electrical fields

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Skov, Anne Ladegaard

    2017-01-01

    . This shortcoming has been attempted optimized through different approaches during recent years. Material optimization with the sole purpose of increasing the dielectric permittivity may lead to the introduction of problematic phenomena such as premature electrical breakdown due to high leakage currents of the thin...... elastomer film. Within this work, electrical breakdown phenomena of various types of permittivity-enhanced silicone elastomers are investigated. Results showed that different types of polymer backbone chemistries lead to differences in electrical breakdown patterns, which were revealed through SEM imaging...

  10. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  11. Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

    Directory of Open Access Journals (Sweden)

    Jiabao Sun

    2015-01-01

    Full Text Available In recent years, germanium has attracted intensive interests for its promising applications in the microelectronics industry. However, to achieve high performance Ge channel devices, several critical issues still have to be addressed. Amongst them, a high quality gate stack, that is, a low defect interface layer and a dielectric layer, is of crucial importance. In this work, we first review the existing methods of interface engineering and gate dielectric engineering and then in more detail we discuss and compare three promising approaches (i.e., plasma postoxidation, high pressure oxidation, and ozone postoxidation. It has been confirmed that these approaches all can significantly improve the overall performance of the metal-oxide-semiconductor field effect transistor (MOSFET device.

  12. Dielectric characteristics of PZT 95/5 ferroelectric ceramics at high pressures

    International Nuclear Information System (INIS)

    Spears, R.K.

    1978-01-01

    The room temperature dielectric properties of a ferroelectric ceramic having a nominal composition of 95 atomic percent lead zirconate and 5 atomic percent lead titanate (designated as PZT 95/5) with a niobium dopant were examined at high hydrostatic pressures using a tetrahedral anvil apparatus. This ceramic has practical applications as a power source in which large quantities of charge are released by dynamic (shock wave) depolarization. Numerous mathematical models of this process have been proposed; however, the use of models has been limited because of the lack of high pressure electrical properties. This study attempted to provide these data on PZT 95/5 by determining the small signal and high electric field dielectric properties at pressures over 4 GPa

  13. High Energy Density Dielectrics for Pulsed Power Applications

    National Research Council Canada - National Science Library

    Wu, Richard L; Bray, Kevin R

    2008-01-01

    This report was developed under a SBIR contract. Aluminum oxynitride (AlON) capacitors exhibit several promising characteristics for high energy density capacitor applications in extreme environments...

  14. High-k dielectrics as bioelectronic interface for field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Borstlap, D

    2007-03-15

    Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation, bioelectronic experiments were performed with the high-k ISFETs. The shape of the signals, which were measured from HL-1 cells with YSZ ISFETs, differed considerably from the corresponding measurements with SiO{sub 2} and DyScO{sub 3} ISFETs: After the onset of the K{sup +} current, the action potentials measured with YSZ ISFETs showed a strong drift in the direction opposite to the K{sup +} current signal. First coupling experiments between HEK 293 cells, which were transfected with a K{sup +} ion channel, and YSZ ISFETs affirmed the assumption from the HL-1

  15. Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

    International Nuclear Information System (INIS)

    Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

    2010-01-01

    Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

  16. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  17. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  18. Pulse Power Capability Of High Energy Density Capacitors Based on a New Dielectric Material

    Science.gov (United States)

    Winsor, Paul; Scholz, Tim; Hudis, Martin; Slenes, Kirk M.

    1999-01-01

    A new dielectric composite consisting of a polymer coated onto a high-density metallized Kraft has been developed for application in high energy density pulse power capacitors. The polymer coating is custom formulated for high dielectric constant and strength with minimum dielectric losses. The composite can be wound and processed using conventional wound film capacitor manufacturing equipment. This new system has the potential to achieve 2 to 3 J/cu cm whole capacitor energy density at voltage levels above 3.0 kV, and can maintain its mechanical properties to temperatures above 150 C. The technical and manufacturing development of the composite material and fabrication into capacitors are summarized in this paper. Energy discharge testing, including capacitance and charge-discharge efficiency at normal and elevated temperatures, as well as DC life testing were performed on capacitors manufactured using this material. TPL (Albuquerque, NM) has developed the material and Aerovox (New Bedford, MA) has used the material to build and test actual capacitors. The results of the testing will focus on pulse power applications specifically those found in electro-magnetic armor and guns, high power microwave sources and defibrillators.

  19. Theoretical and Experimental Studies of New Polymer-Metal High-Dielectric Constant Nanocomposites

    Science.gov (United States)

    Ginzburg, Valeriy; Elwell, Michael; Myers, Kyle; Cieslinski, Robert; Malowinski, Sarah; Bernius, Mark

    2006-03-01

    High-dielectric-constant (high-K) gate materials are important for the needs of electronics industry. Most polymers have dielectric constant in the range 2 materials with K > 10 it is necessary to combine polymers with ceramic or metal nanoparticles. Several formulations based on functionalized Au-nanoparticles (R ˜ 5 -— 10 nm) and PMMA matrix polymer are prepared. Nanocomposite films are subsequently cast from solution. We study the morphology of those nanocomposites using theoretical (Self-Consistent Mean-Field Theory [SCMFT]) and experimental (Transmission Electron Microscopy [TEM]) techniques. Good qualitative agreement between theory and experiment is found. The study validates the utility of SCMFT as screening tool for the preparation of stable (or at least metastable) polymer/nanoparticle mixtures.

  20. Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

    International Nuclear Information System (INIS)

    Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

    2003-01-01

    Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

  1. Superconductivity suppression near metal-dielectric in transition highly disordered systems

    International Nuclear Information System (INIS)

    Kuchinskij, Eh.Z.; Sadovskij, M.V.; Ehrkabaev, M.A.

    1997-01-01

    The effects of temperature suppression of superconducting transition T c within wide limits of disorders values from low-disordered to highly-disordered ones caused by formation of the Coulomb gap in the states density are studied on the bases of the earlier proposed self consistent theory on the metal-dielectric. It is shown that the proposed theory gives satisfactory description of experimental data for a number of the systems under study

  2. Flexible Ultrahigh-Temperature Polymer-Based Dielectrics with High Permittivity for Film Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Zejun Pu

    2017-11-01

    Full Text Available In this report, flexible cross-linked polyarylene ether nitrile/functionalized barium titanate(CPEN/F-BaTiO3 dielectrics films with high permittivitywere prepared and characterized. The effects of both the F-BaTiO3 and matrix curing on the mechanical, thermal and dielectric properties of the CPEN/F-BaTiO3 dielectric films were investigated in detail. Compared to pristine BaTiO3, the surface modified BaTiO3 particles effectively improved their dispersibility and interfacial adhesion in the polymer matrix. Moreover, the introduction of F-BaTiO3 particles enhanced dielectric properties of the composites, with a relatively high permittivity of 15.2 and a quite low loss tangent of 0.022 (1 kHz when particle contents of 40 wt % were utilized. In addition, the cyano (–CN groups of functional layer also can serve as potential sites for cross-linking with polyarylene ether nitrile terminated phthalonitrile (PEN-Ph matrix and make it transform from thermoplastic to thermosetting. Comparing with the pure PEN-ph film, the latter results indicated that the formation of cross-linked network in the polymer-based system resulted in increased tensile strength by ~67%, improved glass transition temperature (Tg by ~190 °C. More importantly, the CPEN/F-BaTiO3 composite films filled with 30 wt % F-BaTiO3 particles showed greater energy density by nearly 190% when compared to pure CPEN film. These findings enable broader applications of PEN-based composites in high-performance electronics and energy storage devices materials used at high temperature.

  3. Fabrication of Composite Filaments with High Dielectric Permittivity for Fused Deposition 3D Printing.

    Science.gov (United States)

    Wu, Yingwei; Isakov, Dmitry; Grant, Patrick S

    2017-10-23

    Additive manufacturing of complex structures with spatially varying electromagnetic properties can enable new applications in high-technology sectors such as communications and sensors. This work presents the fabrication method as well as microstructural and dielectric characterization of bespoke composite filaments for fused deposition modeling (FDM) 3D printing of microwave devices with a high relative dielectric permittivity ϵ = 11 in the GHz frequency range. The filament is composed of 32 vol % of ferroelectric barium titanate (BaTiO 3 ) micro-particles in a polymeric acrylonitrile butadiene styrene (ABS) matrix. An ionic organic ester surfactant was added during formulation to enhance the compatibility between the polymer and the BaTiO 3 . To promote reproducible and robust printability of the fabricated filament, and to promote plasticity, dibutyl phthalate was additionally used. The combined effect of 1 wt % surfactant and 5 wt % plasticizer resulted in a uniform, many hundreds of meters, continuous filament of commercial quality capable of many hours of uninterrupted 3D printing. We demonstrate the feasibility of using the high dielectric constant filament for 3D printing through the fabrication of a range of optical devices. The approach herein may be used as a guide for the successful fabrication of many types of composite filament with varying functions for a broad range of applications.

  4. Fabrication of Composite Filaments with High Dielectric Permittivity for Fused Deposition 3D Printing

    Directory of Open Access Journals (Sweden)

    Yingwei Wu

    2017-10-01

    Full Text Available Additive manufacturing of complex structures with spatially varying electromagnetic properties can enable new applications in high-technology sectors such as communications and sensors. This work presents the fabrication method as well as microstructural and dielectric characterization of bespoke composite filaments for fused deposition modeling (FDM 3D printing of microwave devices with a high relative dielectric permittivity ϵ = 11 in the GHz frequency range. The filament is composed of 32 vol % of ferroelectric barium titanate (BaTiO 3 micro-particles in a polymeric acrylonitrile butadiene styrene (ABS matrix. An ionic organic ester surfactant was added during formulation to enhance the compatibility between the polymer and the BaTiO 3 . To promote reproducible and robust printability of the fabricated filament, and to promote plasticity, dibutyl phthalate was additionally used. The combined effect of 1 wt % surfactant and 5 wt % plasticizer resulted in a uniform, many hundreds of meters, continuous filament of commercial quality capable of many hours of uninterrupted 3D printing. We demonstrate the feasibility of using the high dielectric constant filament for 3D printing through the fabrication of a range of optical devices. The approach herein may be used as a guide for the successful fabrication of many types of composite filament with varying functions for a broad range of applications.

  5. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  6. Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices

    Directory of Open Access Journals (Sweden)

    Masamichi Suzuki

    2012-03-01

    Full Text Available A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3 high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interface with Si, which suppresses the formation of a low-permittivity Si oxide interfacial layer. Careful selection of the film deposition conditions has enabled successful deposition of an LaAlO3 gate dielectric film with an equivalent oxide thickness (EOT of 0.31 nm. Direct contact with Si has been revealed to cause significant tensile strain to the Si in the interface region. The high stability of the effective work function with respect to the annealing conditions has been demonstrated through comparison with Hf-based dielectrics. It has also been shown that the effective work function can be tuned over a wide range by controlling the La/(La + Al atomic ratio. In addition, gate-first n-MOSFETs with ultrathin EOT that use sulfur-implanted Schottky source/drain technology have been fabricated using a low-temperature process.

  7. Investigation of High Voltage Breakdown and Arc Localization in RF Structures

    International Nuclear Information System (INIS)

    Bigelow, T.S.; Goulding, R.H.; Swain, D.W.

    1999-01-01

    An effort is underway to improve the voltage standoff capabilities of ion cyclotron range of frequencies (ICRF) heating and current drive systems. One approach is to develop techniques for determining the location of an electrical breakdown (arc) when it occurs. A technique is described which uses a measurement of the reflection coefficient of a swept frequency signal to determine the arc location. The technique has several advantages including a requirement for only a small number of sensors and very simple data interpretation. In addition a test stand is described which will be used for studies of rf arc behavior. The device uses a quarter-wave resonator to produce voltages to 90 kV in the frequency range of 55-80 MHz

  8. Pulsed EM Field Response of a Thin, High-Contrast, Finely Layered Structure With Dielectric and Conductive Properties

    NARCIS (Netherlands)

    De Hoop, A.T.; Jiang, L.

    2009-01-01

    The response of a thin, high-contrast, finely layered structure with dielectric and conductive properties to an incident, pulsed, electromagnetic field is investigated theoretically. The fine layering causes the standard spatial discretization techniques to solve Maxwell's equations numerically to

  9. High-frequency dielectric response of polyaniline pellets as nanocomposites of metallic emeraldine salt and dielectric base

    Czech Academy of Sciences Publication Activity Database

    Nuzhnyy, Dmitry; Petzelt, Jan; Rychetský, Ivan; Trchová, Miroslava; Stejskal, Jaroslav

    2015-01-01

    Roč. 209, Nov (2015), s. 561-569 ISSN 0379-6779 R&D Projects: GA ČR GAP204/12/0232; GA ČR(CZ) GAP205/12/0911 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : polyaniline * infrared and THz spectroscopy * optical conductivity * dielectric permittivity * vibrational mode * effective medium approach Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.299, year: 2015

  10. Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

    Energy Technology Data Exchange (ETDEWEB)

    Le Paven, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Lu, Y. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Nguyen, H.V. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); CEA LETI, Minatec Campus, 38054 Grenoble (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Rioual, S. [Laboratoire de Magnétisme de Brest (EA CNRS 4522), Université de Bretagne Occidentale, 29000 Brest (France); Benzegoutta, D. [Institut des Nanosciences de Paris (INSP, UMR CNRS 7588), Université Pierre et Marie Curie, 75005 Paris (France); Tessier, F.; Cheviré, F. [Institut des Sciences Chimiques de Rennes (ISCR, UMR-CNRS 6226), Equipe Verres et Céramiques, Université de Rennes 1, 35000 Rennes (France); and others

    2014-02-28

    Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO{sub 3} and Pt(111)/TiO{sub 2}/SiO{sub 2}/(001)Si substrates by RF magnetron sputtering, using a La{sub 2}Ti{sub 2}O{sub 7} homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La{sub 2}Ti{sub 2}O{sub 7} films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti{sup 4+} ions, with no trace of Ti{sup 3+}, and provides a La/Ti ratio of 1.02. The depositions being performed from a La{sub 2}Ti{sub 2}O{sub 7} target under oxygen rich plasma, the same composition (La{sub 2}Ti{sub 2}O{sub 7}) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2{sub 1} space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO{sub 3} substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La{sub 2}Ti{sub 2}O{sub 7} orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La{sub 2}Ti{sub 2}O{sub 7} films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La{sub 2}Ti{sub 2}O{sub 7} chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing.

  11. Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

    International Nuclear Information System (INIS)

    Le Paven, C.; Lu, Y.; Nguyen, H.V.; Benzerga, R.; Le Gendre, L.; Rioual, S.; Benzegoutta, D.; Tessier, F.; Cheviré, F.

    2014-01-01

    Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO 3 and Pt(111)/TiO 2 /SiO 2 /(001)Si substrates by RF magnetron sputtering, using a La 2 Ti 2 O 7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La 2 Ti 2 O 7 films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti 4+ ions, with no trace of Ti 3+ , and provides a La/Ti ratio of 1.02. The depositions being performed from a La 2 Ti 2 O 7 target under oxygen rich plasma, the same composition (La 2 Ti 2 O 7 ) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2 1 space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO 3 substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La 2 Ti 2 O 7 orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La 2 Ti 2 O 7 films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La 2 Ti 2 O 7 chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing

  12. High temperature dielectric properties of spent adsorbent with zinc sulfate by cavity perturbation technique

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Guo [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Key Laboratory of Unconventional Metallurgy, Ministry of Education, Kunming, Yunnan 650093 (China); National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 (China); Liu, Chenhui [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Key Laboratory of Unconventional Metallurgy, Ministry of Education, Kunming, Yunnan 650093 (China); National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 (China); Faculty of Chemistry and Environment, Yunnan Minzu University, Kunming, Yunnan 650093 (China); Zhang, Libo, E-mail: libozhang77@163.com [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Key Laboratory of Unconventional Metallurgy, Ministry of Education, Kunming, Yunnan 650093 (China); National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 (China); and others

    2017-05-15

    Highlights: • Cavity perturbation technique is employed to measure the dielectric properties. • Microwave absorption capability of ZnO is poor from 20 °C to 850 °C. • Dielectric properties of spent absorbent and zinc sulfate are influenced by temperature especially in high temperature stage. • Penetration depths and heating curve indicate spent adsorbent and ZnO·2ZnSO{sub 4}, ZnSO{sub 4} are excellent microwave absorber. • The pore structures of spent adsorbent are improved significantly by microwave-regeneration directly. - Abstract: Dielectric properties of spent adsorbent with zinc sulfate are investigated by cavity perturbation technique at 2450 MHz from 20 °C to approximately 1000 °C. Two weight loss stages are observed for spent adsorbent by thermogravimetric-differential scanning calorimeter (TG-DSC) analysis, and zinc sulfate is decomposed to ZnO·2ZnSO{sub 4} and ZnO at about 750 °C and 860 °C. Microwave absorption capability of ZnSO{sub 4} increases with increasing temperature and declines after ZnO generation on account of the poor dielectric properties. Dielectric properties of spent adsorbent are dependent on apparent density and noticed an interestingly linearly relationship at room temperature. The three parameters increase gently from 20 °C to 400 °C, but a sharp increase both in real part and imaginary part are found subsequently due to the volatiles release and regeneration of carbon. And material conductivity is improved, which contributes to the π-electron conduction appearance. Relationship between penetration depth and temperature further elaborate spent adsorbent is an excellent microwave absorber and the microwave absorption capability order of zinc compounds is ZnO·2ZnSO{sub 4}, ZnSO{sub 4} and ZnO. Heating characteristics suggest that heating rate is related with dielectric properties of materials. The pore structures of spent adsorbent are improved significantly and the surface is smoother after microwave-regeneration.

  13. Optimized extraction conditions from high power-ECRIS by dedicated dielectric structures

    International Nuclear Information System (INIS)

    Schachter, L.; Dobrescu, S.; Stiebing, K.E.

    2012-01-01

    The MD-method of enhancing the ion output from ECR ion sources is well established and basically works via two mechanisms, the regenerative injection of cold electrons from an emissive dielectric layer on the plasma chamber walls and via the cutting of compensating wall currents, which results in an improved ion extraction from the plasma. As this extraction from the plasma becomes a more and more challenging issue for modern ECRIS installations with high microwave power input, a series of experiments was carried out at the 14 GHz ECRIS of the Institut fuer Kernphysik in Frankfurt/Main, Germany (IKF). In contrast to our earlier work, in these experiments emphasis was put on the second of the above mechanisms namely to influence the sheath potential at the extraction by structures with special dielectric properties. Two different types of dielectric structures, Tantalum-oxide and Aluminium oxide (the latter also being used for the MD-method) with dramatically different electrical properties were mounted on the extraction electrode of the IKF-ECRIS, facing the plasma. For both structures an increase of the extracted ion beam currents for middle and high charge states by 60-80 % was observed. The method can also be applied to other ECR ion sources for increasing the extracted ion beam performances. The paper is followed by the slides of the presentation. (authors)

  14. High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric

    Science.gov (United States)

    Ma, Y. X.; Han, C. Y.; Tang, W. M.; Lai, P. T.

    2017-07-01

    Pentacene organic thin-film transistors (OTFT) using high-k LaTiON gate dielectric with different Ti contents are investigated. The LaxTi(1-x)ON films (with x = 1, 0.87, 0.76, and 0.67) are deposited by reactive sputtering followed by an annealing in N2 at 200 °C. The OTFT with La0.87Ti0.13ON can achieve a high carrier mobility of 2.6 cm2/V.s, a small threshold voltage of -1.5 V, a small sub-threshold swing of 0.07 V/dec, and a small hysteresis of 0.17 V. AFM and X-ray photoelectron spectroscopy reveal that Ti can suppress the hygroscopicity of La oxide to achieve a smoother dielectric surface, which can result in larger pentacene grains and thus higher carrier mobility. All the devices show a clockwise hysteresis because both the LaOH formation and Ti incorporation can generate acceptor-like traps in the gate dielectric.

  15. Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

    Science.gov (United States)

    Jiang, H.; Li, X.; Wang, J.; Zhu, L.; Wang, H.; Liu, J.; Wang, M.; Yu, M.; Wu, W.; Zhou, Y.; Dai, G.

    2017-06-01

    AlGaN/GaN high-electron mobility transistor’s (HEMT’s) off-state breakdown is investigated using conventional three-terminal off-state breakdown I-V measurement. Competition between gate leakage and source-injection buffer leakage (SIBL) is discussed in detail. It is found that the breakdown is dominated by source-injection which is sensitive to gate voltage and gate length at large gate-to-drain spacing (Lgd > 7μm), where a threshold drain voltage of the occurrence of the SIBL current in GaN buffer exists, and after this threshold voltage the SIBL current continually increased till the buffer breakdown. Our analysis showed that due to the punch-through effect in the buffer, a potential barrier between 2DEG and GaN buffer at the source side mainly controlled by the drain voltage determines the buffer leakage current and the occurrence of the following buffer breakdown, which could explain the experimentally observed breakdown phenomenon.

  16. Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

    Science.gov (United States)

    Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

    2017-11-01

    Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

  17. Decline of the self-focusing of a pulsed high intensity electron beam owing to gas breakdown

    International Nuclear Information System (INIS)

    Hotta, H.; Arai, H.

    1977-01-01

    The self-focusing of a pulsed high-intensity electron beam in a gas declines in the intermediate pressure region owing to gas breakdown. The degree of the self-focusing of a beam from a Febetron 706 in monatomic gases increases by increasing the breakdown time (t/sub B/), which is defined as the time when the plasma conductivity becomes 10 mho/cm. Secondary electrons are consumed appreciably in polyatomic gases after t/sub B/ through their reactions with ions and neutral molecules. Therefore, in such gases, the amount of the consumption must be estimated to analyze the self-focusing. For the estimation of the consumption, we must remark that the mean energy of secondary electrons is quite different between before and after t/sub B/ because of the different strength of induced longitudinal electric field. As a result of the numerical analyses, we obtain the equation t/sub B/-t/sub N/ =12/w (α-eta) (t/sub N/ is neutralization time, w is electron drift velocity, α is the first Townsend ionization coefficient, and eta is the electron attachment coefficient). Since eta is usually negligibly small before t/sub B/ and t/sub N/ is also negligibly small above a certain pressure, t/sub B/ is approximately inversely proportional to wα. The t/sub B/ in polyatomic gases, however, must be corrected for the consumption described above

  18. High-cycle electromechanical aging of dielectric elastomer actuators with carbon-based electrodes

    Science.gov (United States)

    de Saint-Aubin, C. A.; Rosset, S.; Schlatter, S.; Shea, H.

    2018-07-01

    We present high-cycle aging tests of dielectric elastomer actuators (DEAs) based on silicone elastomers, reporting on the time-evolution of actuation strain and of electrode resistance over millions of cycles. We compare several types of carbon-based electrodes, and for the first time show how the choice of electrode has a dramatic influence on DEA aging. An expanding circle DEA configuration is used, consisting of a commercial silicone membrane with the following electrodes: commercial carbon grease applied manually, solvent-diluted carbon grease applied by stamping (pad printing), loose carbon black powder applied manually, carbon black powder suspension applied by inkjet-printing, and conductive silicone-carbon composite applied by stamping. The silicone-based DEAs with manually applied carbon grease electrodes show the shortest lifetime of less than 105 cycles at 5% strain, while the inkjet-printed carbon powder and the stamped silicone-carbon composite make for the most reliable devices, with lifetimes greater than 107 cycles at 5% strain. These results are valid for the specific dielectric and electrode configurations that were tested: using other dielectrics or electrode formulations would lead to different lifetimes and failure modes. We find that aging (as seen in the change in resistance and in actuation strain versus cycle number) is independent of the actuation frequency from 10 Hz to 200 Hz, and depends on the total accumulated time the DEA spends in an actuated state.

  19. High resolution applications of laser-induced breakdown spectroscopy for environmental and forensic applications

    International Nuclear Information System (INIS)

    Martin, Madhavi Z.; Labbe, Nicole; Andre, Nicolas; Harris, Ronny; Ebinger, Michael; Wullschleger, Stan D.; Vass, Arpad A.

    2007-01-01

    Laser-induced breakdown spectroscopy (LIBS) has been used in the elemental analysis for a variety of environmental samples and as a proof of concept for a host of forensic applications. In the first application, LIBS was used for the rapid detection of carbon from a number of different soil types. In this application, a major breakthrough was achieved by using a multivariate analytical approach that has brought us closer towards a 'universal calibration curve'. In a second application, it has been demonstrated that LIBS in combination with multivariate analysis can be employed to analyze the chemical composition of annual tree growth rings and correlate them to external parameters such as changes in climate, forest fires, and disturbances involving human activity. The objectives of using this technology in fire scar determinations are: 1) To determine the characteristic spectra of wood exposed to forest fires and 2) To examine the viability of this technique for detecting fire occurrences in stems that did not develop fire scars. These examples demonstrate that LIBS-based techniques are inherently well suited for diverse environmental applications. LIBS was also applied to a variety of proof of concept forensic applications such as the analysis of cremains (human cremation remains) and elemental composition analysis of prosthetic implants

  20. Electrical and optical characteristics of dielectric-barrier discharge driven by high voltage nanosecond generator

    International Nuclear Information System (INIS)

    Ahmadeev, V.V.; Kost'yuchenko, S.V.; Kudryavtsev, N.N.; Kurkin, G.A.; Vasilyak, L.M.

    1998-01-01

    Electrical and optical characteristics of the dielectric-barrier discharge in the pressure range of 10-400 Torr were investigated experimentally, particular attention being paid to the discharge homogeneity and to the energy dissipation in the discharge volume. The discharge was driven by a high-voltage pulse generator producing nanosecond high-voltage pulses with an amplitude of 20-30 kV. Air, nitrogen, and helium were used as working gases. The discharge was found to be homogeneous within a wide range of gas pressure. A power density of up to 250 mW/cm 3 has been achieved. (J.U.)

  1. A High-Voltage Class D Audio Amplifier for Dielectric Elastomer Transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Dielectric Elastomer (DE) transducers have emerged as a very interesting alternative to the traditional electrodynamic transducer. Lightweight, small size and high maneuverability are some of the key features of the DE transducer. An amplifier for the DE transducer suitable for audio applications...... is proposed and analyzed. The amplifier addresses the issue of a high impedance load, ensuring a linear response over the midrange region of the audio bandwidth (100 Hz – 3.5 kHz). THD+N below 0.1% are reported for the ± 300 V prototype amplifier producing a maximum of 125 Var at a peak efficiency of 95 %....

  2. Robust optimization of the laser induced damage threshold of dielectric mirrors for high power lasers.

    Science.gov (United States)

    Chorel, Marine; Lanternier, Thomas; Lavastre, Éric; Bonod, Nicolas; Bousquet, Bruno; Néauport, Jérôme

    2018-04-30

    We report on a numerical optimization of the laser induced damage threshold of multi-dielectric high reflection mirrors in the sub-picosecond regime. We highlight the interplay between the electric field distribution, refractive index and intrinsic laser induced damage threshold of the materials on the overall laser induced damage threshold (LIDT) of the multilayer. We describe an optimization method of the multilayer that minimizes the field enhancement in high refractive index materials while preserving a near perfect reflectivity. This method yields a significant improvement of the damage resistance since a maximum increase of 40% can be achieved on the overall LIDT of the multilayer.

  3. High current electron beam acceleration in dielectric-filled RF cavities

    International Nuclear Information System (INIS)

    Faehl, R.J.; Keinigs, R.K.

    1996-01-01

    The acceleration of charged particles in radio frequency (RF) cavities is a widely used mode in high energy accelerators. Advantages include very high accelerating gradients and very stable phase control. A traditional limitation for such acceleration has been their use for intense, high current beam generation. This constraint arises from the inability to store a large amount of electromagnetic energy in the cavity and from loading effects of the beam on the cavity. The authors have studied a simple modification to transcend these limitations. Following Humphries and Huang, they have conducted analytic and numerical investigations of RF accelerator cavities in which a high dielectric constant material, such as water, replaces most of the cavity volume. This raises the stored energy in a cavity of given dimensions by a factor var-epsilon/var-epsilon 0 . For a water fill, var-epsilon/var-epsilon 0 ∼ 80, depending on the frequency. This introduction of high dielectric constant material into the cavity reduces the resonant frequencies by a factor of (var-epsilon/var-epsilon 0 ) 1/2 . This reduced operating frequency mans that existing high efficiency power supplies, at lower frequencies, can be used for an accelerator

  4. 500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

    Science.gov (United States)

    Chen, Liang-yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

    2016-01-01

    High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

  5. Abnormal breakdown characteristic in a two-phase mixture

    Energy Technology Data Exchange (ETDEWEB)

    Ye Qizheng; Li Jin; Lu Fei [College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074 (China)

    2006-05-21

    A two-phase mixture (TPM) is a mixture of gas and macroparticles of high concentration. Based on Townsend's theory, a new cell-iterative model in analytical form for the breakdown mechanism in TPM is presented. Compared with the original cell-iterative model in our previous paper, the obstructive factor of the macroparticles that influences the electron avalanche propagation is considered, except for the macroparticles distorting the electrical field and capture of the electrons. The cell attractive parameter k is presented according to the classical continuum theory for field charging. The modified Paschen law for a TPM is presented to calculate the breakdown voltage. The breakdown voltage of the TPM, U{sub TPM}, increases gradually with an increase in the macroparticle number density (m). The voltage U{sub TPM} is lower than that of the pure gas at low m values and larger at high m values. With a decrease of the macroparticle volume fraction and the dielectric mismatch, the voltage U{sub TPM} increases gradually at low m values and decreases gradually at high m values. The voltage U{sub TPM} at pd 200 cm Torr is lower than that at pd = 760 cm Torr for low m values and larger for high m values. This kind of abnormal breakdown characteristic in the TPM occurs in the case of high macroparticle volume fraction. On the other hand, the minimum of the TPM's Paschen curve increases with increase in m. It provides the possibility and the conditions of greatly increasing the breakdown voltage in a nearly uniform field.

  6. High-resolution three-dimensional compositional imaging by double-pulse laser-induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Schiavo, C.; Grifoni, E.; Legnaioli, S.; Lorenzetti, G.; Poggialini, F.; Pagnotta, S.; Palleschi, V.; Menichetti, L.

    2016-01-01

    In this paper we present a new instrument specifically realized for high-resolution three-dimensional compositional analysis and mapping of materials. The instrument is based on the coupling of a Double-Pulse Laser-Induced Breakdown Spectroscopy (LIBS) instrument with an optical microscope. The compositional mapping of the samples is obtained by scanning the laser beam across the surface of the sample, while the in depth analysis is performed by sending multiple laser pulses on the same point. Depths of analysis of several tens of microns can be obtained. The instrument presented has definite advantages with respect to Laser Ablation-ICP Mass Spectrometry in many applications related to material analysis, biomedicine and environmental diagnostics. An application to the diagnostics of industrial ceramics is presented, demonstrating the feasibility of Double-Pulse LIBS Imaging and its advantages with respect to conventional single-pulse LIBS imaging.

  7. High temperature dielectric and ferroelectric properties of La-modified PbTiO3 nanoceramics

    International Nuclear Information System (INIS)

    Shukla, Archana; Shukla, Namrata; Choudhary, R.N.P.

    2016-01-01

    Ferroelectric materials with high Curie temperature (higher than 300 °C) are highly desirable to construct transducers for high-temperature piezoelectric applications. Among the ferroelectric materials, PbTiO 3 (PT) is considered to be one of the most promising materials. However, the fabrication of high density pure PT ceramics is very difficult because of the highly anisotropy, which limited the use in piezoelectric transducers. Usually, substitutions towards A or B-site of PT may reduce the high anisotropy. The present work reports the experimental investigations on the effect of lanthanum (La 3+ ) substitution on the structural, dielectric and piezoelectric properties of lead titanate (PT) ceramic at high-temperature (RT ∼ 600°C)

  8. Device for detecting imminent failure of high-dielectric stress capacitors. [Patent application

    Science.gov (United States)

    McDuff, G.G.

    1980-11-05

    A device is described for detecting imminent failure of a high-dielectric stress capacitor utilizing circuitry for detecting pulse width variations and pulse magnitude variations. Inexpensive microprocessor circuitry is utilized to make numerical calculations of digital data supplied by detection circuitry for comparison of pulse width data and magnitude data to determine if preselected ranges have been exceeded, thereby indicating imminent failure of a capacitor. Detection circuitry may be incorporated in transmission lines, pulse power circuitry, including laser pulse circuitry or any circuitry where capacitors or capacitor banks are utilized.

  9. Electron, ion and atomic beams interaction with solid high-molecular dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Milyavskij, V V; Skvortsov, V A [Russian Academy of Sciences, Moscow (Russian Federation). High Energy Density Research Center

    1997-12-31

    A mathematical model was constructed and numerical investigation performed of the interaction between intense electron, ion and atomic beams and solid high-molecular dielectrics under various boundary conditions. The model is based on equations of the mechanics of continuum, electrodynamics and kinetics, describing the accumulation and relaxation of space charge and shock-wave processes, as well as the evolution of electric field in the sample. A semi-empirical procedure is proposed for the calculation of energy deposition by electron beam in a target in the presence of a non-uniform electric field. (author). 4 figs., 2 refs.

  10. Streamers in water and other dielectric liquids

    International Nuclear Information System (INIS)

    Kolb, J F; Joshi, R P; Xiao, S; Schoenbach, K H

    2008-01-01

    Experimental results on the inception and propagation of streamers in water generated under the application of high electric fields are reviewed. Characteristic parameters, such as breakdown voltage, polarity of the applied voltage, propagation velocities and other phenomenological features, are compared with similar phenomena in other dielectric liquids and in gases. Consequently, parameters that are expected to influence the development of streamers in water are discussed with respect to the analogous well-established models and theories for the related mechanisms in gases. Most of the data support the notion that an initial low-density nucleation site or gas-filled bubble assists the initiation of a streamer. Details of this theory are laid out explaining the observed differences in the breakdown originating from the anode versus the cathode locations. The mechanisms can also be applied to streamer propagation, although some observations cannot be satisfactorily explained.

  11. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  12. PREFACE: Dielectrics 2009: Measurement Analysis and Applications

    Science.gov (United States)

    Vaughan, Alun; Williams, Graham

    2009-07-01

    2001 the Annual Meetings focused on numerous topics, including relaxation and conduction processes in liquids, solids, liquid crystals, synthetic polymers and biopolymers, piezoelectric materials, electrets and ferroelectrets, interfacial phenomena, high field conduction and breakdown phenomena in solids, liquids and gases and, importantly, the remarkable developments in dielectric instrumentation during this period. These activities reflected the need, and willingness, to move dielectrics researches with the times. As examples of the variety and diversity of these meetings we may refer briefly to the 1981, 1989 and 1996 Meetings. The 1981 Oxford Meeting on High Field Phenomena in Dielectrics included strong themes on fundamental and practical effects of high E-fields on the dielectric and conduction behaviour of liquids and solids, electrical treeing and dielectric breakdown, non-linear dielectric effects, electrets, thin-film devices and electro-rheology. The late 1980's had seen large initiatives in the UK and globally in the general area of Molecular Electronics so, in timely fashion, this was the subject of the 1989 Meeting in Bangor. The 1996 Smart Dielectrics Meeting at Canterbury reported subsequent advances in designer materials having electro-responsive and electro-optical properties. The programme concerned electro- and photo-active materials, mainly organic, in the form of polar dielectrics, polyelectrolytes, organic semi- and photo-conductors, photo-refractive polymer films, organic ferroelectric films, liquid crystalline polymer films, piezo- and pyro-electric polymer films, electroluminescent polymers, electro-rheological fluids and non-linear optical polymer films as described by leading international scientists. The physico-chemical functions of the materials were demonstrated and interpreted in terms of fundamental molecular properties. An Archive, containing full details of all the Meetings of the DDG and the Dielectrics Society, has been placed on

  13. A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage

    International Nuclear Information System (INIS)

    Luo Xiaorong; Zhang Wei; Zhang Bo; Li Zhaoji; Yang Shouguo; Zhan Zhan; Fu Daping

    2008-01-01

    A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (R on ) for the ST SOI is obtained due to the variable thickness SOI layer

  14. Race for novel high-index all-dielectric and hybrid metal-dielectric nanophotonic materials: Pit-stop optical tests

    Science.gov (United States)

    Kudryashov, S. I.; Saraeva, I. N.; Ivanova, A. K.; Kudryavtseva, A. D.; Tchiernega, N. V.; Ionin, A. A.; Kuchmizhak, A. A.; Zayarny, D. A.

    2017-09-01

    Magnetic dipolar Mie-resonance of nanodiamonds supports their highly-efficient stimulated low-frequency Raman scattering via nanosecond laser excitation of their fundamental breathing mode, with strong additional plasmonic enhancement of the Raman conversion efficiency upon ablative capping of the resonant nanodiamond core by a silver nanoshell with a broad overlapping electrical dipolar Mie-resonance. Also, crystalline selenium nanoparticles, exhibiting the high refractive index in the visible/near-IR ranges, were demonstrated as promising all-dielectric sensing building nanoblocks in nanophotonics.

  15. Towards the accurate electronic structure descriptions of typical high-constant dielectrics

    Science.gov (United States)

    Jiang, Ting-Ting; Sun, Qing-Qing; Li, Ye; Guo, Jiao-Jiao; Zhou, Peng; Ding, Shi-Jin; Zhang, David Wei

    2011-05-01

    High-constant dielectrics have gained considerable attention due to their wide applications in advanced devices, such as gate oxides in metal-oxide-semiconductor devices and insulators in high-density metal-insulator-metal capacitors. However, the theoretical investigations of these materials cannot fulfil the requirement of experimental development, especially the requirement for the accurate description of band structures. We performed first-principles calculations based on the hybrid density functionals theory to investigate several typical high-k dielectrics such as Al2O3, HfO2, ZrSiO4, HfSiO4, La2O3 and ZrO2. The band structures of these materials are well described within the framework of hybrid density functionals theory. The band gaps of Al2O3, HfO2, ZrSiO4, HfSiO4, La2O3 and ZrO2are calculated to be 8.0 eV, 5.6 eV, 6.2 eV, 7.1 eV, 5.3 eV and 5.0 eV, respectively, which are very close to the experimental values and far more accurate than those obtained by the traditional generalized gradient approximation method.

  16. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

    Directory of Open Access Journals (Sweden)

    Takashi Ando

    2012-03-01

    Full Text Available Current status and challenges of aggressive equivalent-oxide-thickness (EOT scaling of high-κ gate dielectrics via higher-κ ( > 20 materials and interfacial layer (IL scavenging techniques are reviewed. La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm, but with effective workfunction (EWF values suitable only for n-type field-effect-transistor (FET. Further exploration for p-type FET-compatible higher-κ materials is needed. Meanwhile, IL scavenging is a promising approach to extend Hf-based highdielectrics to future nodes. Remote IL scavenging techniques enable EOT scaling below 0.5 nm. Mobility-EOT trends in the literature suggest that short-channel performance improvement is attainable with aggressive EOT scaling via IL scavenging or La-silicate formation. However, extreme IL scaling (e.g., zero-IL is accompanied by loss of EWF control and with severe penalty in reliability. Therefore, highly precise IL thickness control in an ultra-thin IL regime ( < 0.5 nm will be the key technology to satisfy both performance and reliability requirements for future CMOS devices.

  17. Visible-Frequency Dielectric Metasurfaces for Multiwavelength Achromatic and Highly Dispersive Holograms.

    Science.gov (United States)

    Wang, Bo; Dong, Fengliang; Li, Qi-Tong; Yang, Dong; Sun, Chengwei; Chen, Jianjun; Song, Zhiwei; Xu, Lihua; Chu, Weiguo; Xiao, Yun-Feng; Gong, Qihuang; Li, Yan

    2016-08-10

    Dielectric metasurfaces built up with nanostructures of high refractive index represent a powerful platform for highly efficient flat optical devices due to their easy-tuning electromagnetic scattering properties and relatively high transmission efficiencies. Here we show visible-frequency silicon metasurfaces formed by three kinds of nanoblocks multiplexed in a subwavelength unit to constitute a metamolecule, which are capable of wavefront manipulation for red, green, and blue light simultaneously. Full phase control is achieved for each wavelength by independently changing the in-plane orientations of the corresponding nanoblocks to induce the required geometric phases. Achromatic and highly dispersive meta-holograms are fabricated to demonstrate the wavefront manipulation with high resolution. This technique could be viable for various practical holographic applications and flat achromatic devices.

  18. Significantly Elevated Dielectric and Energy Storage Traits in Boron Nitride Filled Polymer Nano-composites with Topological Structure

    Science.gov (United States)

    Feng, Yefeng; Zhang, Jianxiong; Hu, Jianbing; Li, Shichun; Peng, Cheng

    2018-03-01

    Interface induced polarization has a prominent influence on dielectric properties of 0-3 type polymer based composites containing Si-based semi-conductors. The disadvantages of composites were higher dielectric loss, lower breakdown strength and energy storage density, although higher permittivity was achieved. In this work, dielectric, conductive, breakdown and energy storage properties of four nano-composites have been researched. Based on the cooperation of fluoropolymer/alpha-SiC layer and fluoropolymer/hexagonal-BN layer, it was confirmed constructing the heterogeneous layer-by-layer composite structure rather than homogeneous mono-layer structure could significantly reduce dielectric loss, promote breakdown strength and increase energy storage density. The former worked for a larger dielectric response and the latter layer acted as a robust barrier of charge carrier transfer. The best nano-composite could possess a permittivity of 43@100 Hz ( 3.3 times of polymer), loss of 0.07@100 Hz ( 37% of polymer), discharged energy density of 2.23 J/cm3@249 kV/cm ( 10 times of polymer) and discharged energy efficiency of 54%@249 kV/cm ( 5 times of polymer). This work might enlighten a facile route to achieve the promising high energy storage composite dielectrics by constructing the layer-by-layer topological structure.

  19. Dielectrics in electric fields

    CERN Document Server

    Raju, Gorur G

    2003-01-01

    Discover nontraditional applications of dielectric studies in this exceptionally crafted field reference or text for seniors and graduate students in power engineering tracks. This text contains more than 800 display equations and discusses polarization phenomena in dielectrics, the complex dielectric constant in an alternating electric field, dielectric relaxation and interfacial polarization, the measurement of absorption and desorption currents in time domains, and high field conduction phenomena. Dielectrics in Electric Fields is an interdisciplinary reference and text for professionals and students in electrical and electronics, chemical, biochemical, and environmental engineering; physical, surface, and colloid chemistry; materials science; and chemical physics.

  20. Thermal Conductivity and High-Frequency Dielectric Properties of Pressureless Sintered SiC-AlN Multiphase Ceramics

    Directory of Open Access Journals (Sweden)

    Jialin Gu

    2018-06-01

    Full Text Available SiC-AlN multiphase ceramics with 10 wt. %Y2O3-BaO-SiO2 additives were fabricated by pressureless sintering in a nitrogen atmosphere. The effects of SiC contents and sintering temperatures on the sinterability, microstructure, thermal conductivity and high-frequency dielectric properties were characterized. In addition to 6H-SiC and AlN, the samples also contained Y3Al5O12 and Y4Al2O9. SiC-AlN ceramics sintered with 50 wt. % SiC at 2173 K exhibited the best thermal diffusivity and thermal conductivity (26.21 mm2·s−1 and 61.02 W·m−1·K−1, respectively. The dielectric constant and dielectric loss of the sample sintered with 50 wt. % SiC and 2123 K were 33–37 and 0.4–0.5 at 12.4–18 GHz. The dielectric constant and dielectric loss of the samples decreased as the frequency of electromagnetic waves increased from 12.4–18 GHz. The dielectric thermal conductivity properties of the SiC-AlN samples are discussed.

  1. Lattices of dielectric resonators

    CERN Document Server

    Trubin, Alexander

    2016-01-01

    This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the  expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas  and lattices of d...

  2. High-efficient light absorption of monolayer graphene via cylindrical dielectric arrays and the sensing application

    Science.gov (United States)

    Zhou, Peng; Zheng, Gaige

    2018-04-01

    The efficiency of graphene-based optoelectronic devices is typically limited by the poor absolute absorption of light. A hybrid structure of monolayer graphene with cylindrical titanium dioxide (TiO2) array and aluminum oxide (Al2O3) spacer layer on aluminum (Al) substrate has been proposed to enhance the absorption for two-dimensional (2D) materials. By combining dielectric array with metal substrate, the structure achieves multiple absorption peaks with near unity absorbance at near-infrared wavelengths due to the resonant effect of dielectric array. Completed monolayer graphene is utilized in the design without any demand of manufacture process to form the periodic patterns. Further analysis indicates that the near-field enhancement induced by surface modes gives rise to the high absorption. This favorable field enhancement and tunability of absorption not only open up new approaches to accelerate the light-graphene interaction, but also show great potential for practical applications in high-performance optoelectronic devices, such as modulators and sensors.

  3. High temperature dielectric function of silicon, germanium and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Leyer, Martin; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin (Germany). Institut fuer Festkoerperphysik

    2010-07-01

    In the last few years accurate values for the optical properties of silicon, germanium and GaN at high temperatures have become important as a reference for in-situ analysis, e.g. reflectometry. Precise temperature dependent dielectric measurements are necessary for the growth of GaInP/GaInAs/Ge triple-junction solar cells and the hetero epitaxy of GaN on silicon and sapphire. We performed spectroscopic ellipsometry (SE) measurements of the dielectric function of silicon, germanium and GaN between 1.5 eV and 6.5 eV in the temperature range from 300 K to 1300 K. The Samples were deoxidized chemically or by heating. High resolution SE spectra were taken every 50 K while cooling down to room temperature. The temperature dependence of the critical energies is compared to literature. Measurements for germanium showed a shift of the E{sub 2} critical point of {proportional_to}0.1 eV toward lower energies. The reason for this behavior is a non-negligible oxide layer on the samples in the literature.

  4. Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

    2016-05-01

    In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

  5. Structural and dielectric properties of barium strontium titanate produced by high temperature hydrothermal method

    International Nuclear Information System (INIS)

    Razak, K.A.; Asadov, A.; Yoo, J.; Haemmerle, E.; Gao, W.

    2008-01-01

    The preparation procedure, structural and dielectric properties of hydrothermally derived Ba x Sr 1-x TiO 3 (BST) were studied. BST with initial Ba compositions of 75, 80, 85 and 90 mol.% were prepared by a high temperature hydrothermal synthesis. The obtained powders were pressed into pellet, cold isostatically pressed and sintered at 1200 deg. C for 3 hours. The phase compositions and lattice parameters of the as prepared powders and sintered samples were analysed using X-ray diffractometry. A fitting software was used to analyse the XRD spectra to separate different phases. It was found that BST powder produced by the high temperature hydrothermal possessed a two-phase structure. This structure became more homogeneous during sintering due to interdiffusion but a small amount of minor phase can still be traced. Samples underwent an abnormal grain growth, whereby some grains grow faster than the other due to the presence of two-phase structure. The grain size increased with increasing Ba amount. Dielectric constant and polarisation increased with increasing Ba content but it was also affected by the electronic state and grain size of the compositions

  6. Rationally designed polyimides for high-energy density capacitor applications.

    Science.gov (United States)

    Ma, Rui; Baldwin, Aaron F; Wang, Chenchen; Offenbach, Ido; Cakmak, Mukerrem; Ramprasad, Rampi; Sotzing, Gregory A

    2014-07-09

    Development of new dielectric materials is of great importance for a wide range of applications for modern electronics and electrical power systems. The state-of-the-art polymer dielectric is a biaxially oriented polypropylene (BOPP) film having a maximal energy density of 5 J/cm(3) and a high breakdown field of 700 MV/m, but with a limited dielectric constant (∼2.2) and a reduced breakdown strength above 85 °C. Great effort has been put into exploring other materials to fulfill the demand of continuous miniaturization and improved functionality. In this work, a series of polyimides were investigated as potential polymer materials for this application. Polyimide with high dielectric constants of up to 7.8 that exhibits low dissipation factors (dielectric constant and band gap. Correlations of experimental and theoretical results through judicious variations of polyimide structures allowed for a clear demonstration of the relationship between chemical functionalities and dielectric properties.

  7. Analyzing randomly occurring voltage breakdowns

    International Nuclear Information System (INIS)

    Wiltshire, C.W.

    1977-01-01

    During acceptance testing of high-vacuum neutron tubes, 40% of the tubes failed after experiencing high-voltage breakdowns during the aging process. Use of a digitizer in place of an oscilloscope revealed two types of breakdowns, only one of which affected acceptance testing. This information allowed redesign of the aging sequence to prevent tube damage and improve yield and quality of the final product

  8. Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

    International Nuclear Information System (INIS)

    Sarma, R.; Saikia, D.

    2010-01-01

    We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

  9. Broadband and high efficiency all-dielectric metasurfaces for wavefront steering with easily obtained phase shift

    Science.gov (United States)

    Yang, Hui; Deng, Yan

    2017-12-01

    All-dielectric metasurfaces for wavefront deflecting and optical vortex generating with broadband and high efficiency are demonstrated. The unit cell of the metasurfaces is optimized to function as a half wave-plate with high polarization conversion efficiency (94%) and transmittance (94.5%) at the telecommunication wavelength. Under such a condition, we can get rid of the complicated parameter sweep process for phase shift selecting. Hence, a phase coverage ranges from 0 to 2 π can be easily obtained by introducing the Pancharatnam-Berry phase. Metasurfaces composed of the two pre-designed super cells are demonstrated for optical beam deflecting and vortex beam generating. It is found that the metasurfaces with more phase shift sampling points (small phase shift increment) exhibit better performance. Moreover, optical vortex beams can be generated by the designed metasurfaces within a wavelength range of 200 nm. These results will provide a viable route for designing broadband and high efficiency devices related to phase modulation.

  10. Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

    Science.gov (United States)

    Zhang, Shumao; Kuo, Yue

    2018-03-01

    Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

  11. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

    OpenAIRE

    Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

    2006-01-01

    We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

  12. Cast dielectric composite linear accelerator

    Science.gov (United States)

    Sanders, David M [Livermore, CA; Sampayan, Stephen [Manteca, CA; Slenes, Kirk [Albuquerque, NM; Stoller, H M [Albuquerque, NM

    2009-11-10

    A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

  13. Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

    2010-05-31

    The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

  14. Full Polymer Dielectric Elastomeric Actuators (DEA Functionalised with Carbon Nanotubes and High-K Ceramics

    Directory of Open Access Journals (Sweden)

    Tilo Köckritz

    2016-09-01

    Full Text Available Dielectric elastomer actuators (DEA are special devices which have a simple working and construction principle and outstanding actuation properties. The DEAs consist of a combination of different materials for the dielectric and electrode layers. The combination of these layers causes incompatibilities in their interconnections. Dramatic differences in the mechanical properties and bad adhesion of the layers are the principal causes for the reduction of the actuation displacement and strong reduction of lifetime. Common DEAs achieve actuation displacements of 2% and a durability of some million cycles. The following investigations represent a new approach to solving the problems of common systems. The investigated DEA consists of only one basic raw polymer, which was modified according to the required demands of each layer. The basic raw polymer was modified with single-walled carbon nanotubes or high-k ceramics, for example, lead magnesium niobate-lead titanate. The development of the full polymer DEA comprised the development of materials and technologies to realise a reproducible layer composition. It was proven that the full polymer actuator worked according to the theoretical rules. The investigated system achieved actuation displacements above 20% regarding thickness, outstanding interconnections at each layer without any failures, and durability above 3 million cycles without any indication of an impending malfunction.

  15. Advanced passivation techniques for Si solar cells with highdielectric materials

    International Nuclear Information System (INIS)

    Geng, Huijuan; Lin, Tingjui; Letha, Ayra Jagadhamma; Hwang, Huey-Liang; Kyznetsov, Fedor A.; Smirnova, Tamara P.; Saraev, Andrey A.; Kaichev, Vasily V.

    2014-01-01

    Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al 2 O 3 , HfO 2 ) and their compounds H (Hf) A (Al) O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al 2 O 3 film has been found to provide negative fixed charge (−6.4 × 10 11  cm −2 ), whereas HfO 2 film provides positive fixed charge (3.2 × 10 12  cm −2 ). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with highdielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO 2 film would provide better passivation properties than that of the ALD-Al 2 O 3 film in this research work.

  16. AN OVERVIEW OF HIGH VOLTAGE DIELECTRIC MATERIAL FOR TRAVELING WAVE KICKER MAGNET APPLICATION

    International Nuclear Information System (INIS)

    ZHANG, W.; SANDBERG, J.; TUOZZOLO, J.; CASSEL, R.; DUCIMETIERE, L.; JENSEN, C.; BARNES, M.; WAIT, G.; WANG, J.

    2002-01-01

    Pulsed high power fast kickers are being used to change beam trajectories in particle accelerators. The fast rise and fall time of pulse waveform demands a transmission line structure for the kicker deflector design. The ideal design will be parallel metal plates. However, it uses very long straight sections to achieve the required deflection. In accelerators with constrained straight sections, high permeability materials such as ferrite have to be used to gain deflection efficiency. The transmission line kicker magnet is also referred as traveling wave kicker magnet. Its construction is based on distributed 1-C cells along the longitudinal direction. The magnetic cells and capacitive cells are interleaved to simulate the characteristic impedance of a transmission line to minimize pulse reflection, and provide adequate frequency bandwidth to transmit the kicker pulse with fast rise and fall time. The magnetic cells are usually made of ferrite ceramics, but the capacitive cells have been made with different materials. For traveling wave kickers with higher impedance, the parallel plate vacuum capacitor has been used in CERN and KEK design. Others have used ceramic capacitors, printed circuit boards, and high permittivity ceramics as the capacitive cell. The high dielectric material has the advantage of compactness for low impedance kicker magnet construction. It continues to be very attractive for future kicker magnet applications. The high voltage phenomena associated with high dielectric ceramic materials have been widely reported in many industrial application areas. Their implication in the traveling wave magnet application has to be well understood. In this presentation, the areas requiring further quantitative study will be outlined

  17. High temperature dielectric properties of (BxNyOz thin films deposited using ion source assisted physical vapor deposition

    Directory of Open Access Journals (Sweden)

    N. Badi

    2015-12-01

    Full Text Available The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, BxNyOz dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using BxNyOz as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

  18. High-k 3D-barium titanate foam/phenolphthalein poly(ether sulfone)/cyanate ester composites with frequency-stable dielectric properties and extremely low dielectric loss under reduced concentration of ceramics

    Science.gov (United States)

    Zheng, Longhui; Yuan, Li; Guan, Qingbao; Liang, Guozheng; Gu, Aijuan

    2018-01-01

    Higher dielectric constant, lower dielectric loss and better frequency stability have been the developing trends for high dielectric constant (high-k) materials. Herein, new composites have been developed through building unique structure by using hyperbranched polysiloxane modified 3D-barium titanate foam (BTF) (BTF@HSi) as the functional fillers and phenolphthalein poly(ether sulfone) (cPES)/cyanate ester (CE) blend as the resin matrix. For BTF@HSi/cPES/CE composite with 34.1 vol% BTF, its dielectric constant at 100 Hz is as high as 162 and dielectric loss is only 0.007; moreover, the dielectric properties of BTF@HSi/cPES/CE composites exhibit excellent frequency stability. To reveal the mechanism behind these attractive performances of BTF@HSi/cPES/CE composites, three kinds of composites (BTF/CE, BTF/cPES/CE, BTF@HSi/CE) were prepared, their structure and integrated performances were intensively investigated and compared with those of BTF@HSi/cPES/CE composites. Results show that the surface modification of BTF is good for preparing composites with improved thermal stability; while introducing flexible cPES to CE is beneficial to fabricate composites with good quality through effectively blocking cracks caused by the stress concentration, and then endowing the composites with good dielectric properties at reduced concentration of ceramics.

  19. Dielectric Actuation of Polymers

    Science.gov (United States)

    Niu, Xiaofan

    Dielectric polymers are widely used in a plurality of applications, such as electrical insulation, dielectric capacitors, and electromechanical actuators. Dielectric polymers with large strain deformations under an electric field are named dielectric elastomers (DE), because of their relative low modulus, high elongation at break, and outstanding resilience. Dielectric elastomer actuators (DEA) are superior to traditional transducers as a muscle-like technology: large strains, high energy densities, high coupling efficiency, quiet operation, and light weight. One focus of this dissertation is on the design of DE materials with high performance and easy processing. UV radiation curing of reactive species is studied as a generic synthesis methodology to provide a platform for material scientists to customize their own DE materials. Oligomers/monomers, crosslinkers, and other additives are mixed and cured at appropriate ratios to control the stress-strain response, suppress electromechanical instability of the resulting polymers, and provide stable actuation strains larger than 100% and energy densities higher than 1 J/g. The processing is largely simplified in the new material system by removal of the prestretching step. Multilayer stack actuators with 11% linear strain are demonstrated in a procedure fully compatible with industrial production. A multifunctional DE derivative material, bistable electroactive polymer (BSEP), is invented enabling repeatable rigid-to-rigid deformation without bulky external structures. Bistable actuation allows the polymer actuator to have two distinct states that can support external load without device failure. Plasticizers are used to lower the glass transition temperature to 45 °C. Interpenetrating polymer network structure is established inside the BSEP to suppress electromechanical instability, providing a breakdown field of 194 MV/m and a stable bistable strain as large as 228% with a 97% strain fixity. The application of BSEP

  20. Enhancing electrical energy storage capability of dielectric polymer nanocomposites via the room temperature Coulomb blockade effect of ultra-small platinum nanoparticles.

    Science.gov (United States)

    Wang, Liwei; Huang, Xingyi; Zhu, Yingke; Jiang, Pingkai

    2018-02-14

    Introducing a high dielectric constant (high-k) nanofiller into a dielectric polymer is the most common way to achieve flexible nanocomposites for electrostatic energy storage devices. However, the significant decrease of breakdown strength and large increase of dielectric loss has long been known as the bottleneck restricting the enhancement of practical energy storage capability of the nanocomposites. In this study, by introducing ultra-small platinum (energy density of the Pt@PDA@BT nanocomposites is increased by nearly 70% because of the improved energy storage efficiency. This research provides a simple, promising and unique way to enhance energy storage capability of high-k polymer nanocomposites.

  1. High efficiency on-chip Dielectric Resonator Antennna using micromachining technology

    KAUST Repository

    Sallam, Mai O.; Serry, Mohamed; Shamim, Atif; De Raedt, Walter; Sedky, Sherif; Vandenbosch, Guy A. E.; Soliman, Ezzeldin A.

    2015-01-01

    In this paper, a novel cylindrical Dielectric Resonator Antenna (DRA) operating at 60 GHz is introduced. The antenna is fabricated using a high-resistivity silicon wafer. The DR is defined in the wafer using micromachining technology. The feeding network is located at the other side of the wafer. The proposed antenna is simulated using HFSS and the results are verified by measurements. The antenna radiation is mainly along the broadside direction. The measured gain, radiation efficiency, and bandwidth are 7 dBi, 74.65%, and 2.23 GHz respectively. The antenna is characterized by high polarization purity where the maximum cross-polarization is -15 dB. © 2015 IEEE.

  2. High efficiency on-chip Dielectric Resonator Antennna using micromachining technology

    KAUST Repository

    Sallam, Mai O.

    2015-10-26

    In this paper, a novel cylindrical Dielectric Resonator Antenna (DRA) operating at 60 GHz is introduced. The antenna is fabricated using a high-resistivity silicon wafer. The DR is defined in the wafer using micromachining technology. The feeding network is located at the other side of the wafer. The proposed antenna is simulated using HFSS and the results are verified by measurements. The antenna radiation is mainly along the broadside direction. The measured gain, radiation efficiency, and bandwidth are 7 dBi, 74.65%, and 2.23 GHz respectively. The antenna is characterized by high polarization purity where the maximum cross-polarization is -15 dB. © 2015 IEEE.

  3. High-efficiency terahertz polarization devices based on the dielectric metasurface

    Science.gov (United States)

    Zhou, Jian; Wang, JingJing; Guo, Kai; Shen, Fei; Zhou, Qingfeng; Zhiping yin; Guo, Zhongyi

    2018-02-01

    Metasurfaces are composed of the subwavelength structures, which can be used to manipulate the amplitude, phase, and polarization of incident electromagnetic waves efficiently. Here, we propose a novel type of dielectric metasurface based on crystal Si for realizing to manipulate the terahertz wave, in which by varying the geometric sizes of the Si micro-bricks, the transmitting phase of the terahertz wave can almost span over the entire 2π range for both of the x-polarization and y-polarization simultaneously, while keeping the similarly high-transmission amplitudes (over 90%). At the frequency of 1.0 THz, we have successfully designed a series of controllable THz devices, such as the polarization-dependent beam splitter, polarization-independent beam deflector and the focusing lenses based on the designed metasurfaces. Our designs are easy to fabricate and can be promising in developing high-efficiency THz functional devices.

  4. High power testing oa ANL X-band dielectric-loaded accelerating structures

    International Nuclear Information System (INIS)

    Power, J. G.; Gai, W.; Jing, C.; Konecny, R.; Gold, S. H.; Kinkead, A. K.

    2002-01-01

    In the second phase of a program to develop a compact accelerator based on a dielectric-loaded accelerating structure, we have conducted high power tests on a traveling-wave and a standing-wave prototype. Indications are that the traveling-wave structure achieved an accelerating gradient of 3-5 MV/m before the input coupling window failed, while the standing wave structure was poorly matched at high power due to contamination of copper residue on its coupling window. To solve both of these problems, a new method for coupling RF into the structures has been developed. The new couplers and the rest of the modular structure are currently under construction and will be tested at the Naval Research Laboratory shortly

  5. Polymethyl methacrylate (PMMA)-bismuth ferrite (BFO) nanocomposite: low loss and high dielectric constant materials with perceptible magnetic properties.

    Science.gov (United States)

    Tamboli, Mohaseen S; Palei, Prakash K; Patil, Santosh S; Kulkarni, Milind V; Maldar, Noormahmad N; Kale, Bharat B

    2014-09-21

    Herein, poly(methyl methacrylate)-bismuth ferrite (PMMA-BFO) nanocomposites were successfully prepared by an in situ polymerization method for the first time. Initially, the as prepared bismuth ferrite (BFO) nanoparticles were dispersed in the monomer, (methyl methacrylate) by sonication. Benzoyl peroxide was used to initiate the polymerization reaction in ethyl acetate medium. The nanocomposite films were subjected to X-ray diffraction analysis (XRD), (1)H NMR, field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), thermogravimetric analysis (TGA), infrared spectroscopy (IR), dielectric and magnetic characterizations. The dielectric measurement of the nanocomposites was investigated at a frequency range of 10 Hz to 1 MHz. It was found that the nanocomposites not only showed a significantly increased value of the dielectric constant with an increase in the loading percentage of BFO as compared to pure PMMA, but also exhibited low dielectric loss values over a wide range of frequencies. The values of the dielectric constant and dielectric loss of the PMMA-BFO5 (5% BFO loading) sample at 1 kHz frequency was found be ~14 and 0.037. The variation of the ferromagnetic response of the nanocomposite was consistent with the varying volume percentage of the nanoparticles. The remnant magnetization (Mr) and saturation magnetization (Ms) values of the composites were found to be enhanced by increasing the loading percentage of BFO. The value of Ms for PMMA-BFO5 was found to be ~6 emu g(-1). The prima facie observations suggest that the nanocomposite is a potential candidate for application in high dielectric constant capacitors. Significantly, based on its magnetic properties the composite will also be useful for use in hard disk components.

  6. Integrated high voltage power supply utilizing burst mode control and its performance impact on dielectric electro active polymer actuators

    DEFF Research Database (Denmark)

    Andersen, Thomas; Rødgaard, Martin Schøler; Andersen, Michael A. E.

    Through resent years new high performing Dielectric Electro Active Polymers (DEAP) have emerged. To fully utilize the potential of DEAPs a driver with high voltage output is needed. In this paper a piezoelectric transformer based power supply for driving DEAP actuators is developed, utilizing...

  7. Infrared gas phase study on plasma-polymer interactions in high-current diffuse dielectric barrier discharge

    NARCIS (Netherlands)

    Liu, Y.; Welzel, S.; Starostin, S. A.; van de Sanden, M. C. M.; Engeln, R.; de Vries, H. W.

    2017-01-01

    A roll-to-roll high-current diffuse dielectric barrier discharge at atmospheric pressure was operated in air and Ar/N2/O2 gas mixtures. The exhaust gas from the discharge was studied using a high-resolution Fourier-transform infrared spectrometer in the range from 3000 to 750?cm-1 to unravel the

  8. The electrical breakdown strength of pre-stretched elastomers, with and without sample volume conservation

    DEFF Research Database (Denmark)

    Zakaria, Shamsul Bin; Morshuis, Peter H. F.; Yahia, Benslimane Mohamed

    2015-01-01

    In practice, the electrical breakdown strength of dielectric electroactive polymers (DEAPs)determines the upper limit for transduction. During DEAP actuation, the thickness of the elastomer decreases, and thus the electrical field increases and the breakdown process is determined by a coupled...... electro-mechanical failure mechanism. A thorough understanding of the mechanisms behind the electro-mechanical breakdown process is required for developing reliable transducers. In this study, two experimental configurations were used to determine the stretch dependence of the electrical breakdown...

  9. Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

    Science.gov (United States)

    Fan, Wei

    To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers

  10. Voltage breakdown on niobium and copper surfaces

    International Nuclear Information System (INIS)

    Werner, G.R.; Padamsee, H.; Betzwieser, J.C.; Liu, Y.G.; Rubin, K.H.R.; Shipman, J.E.; Ying, L.T.

    2003-01-01

    Experiments have shown that voltage breakdown in superconducting niobium RF cavities is in many ways similar to voltage breakdown on niobium cathodes in DC voltage gaps; most striking are the distinctive starburst patterns and craters that mark the site of voltage breakdown in both superconducting cavities and DC vacuum gaps. Therefore, we can learn much about RF breakdown from simpler, faster DC experiments. We have direct evidence, in the form of before'' and ''after'' pictures, that breakdown events caused by high surface electric fields occur with high probability at contaminant particles on surfaces. Although the pre-breakdown behavior (field emission) seems to depend mostly on the contaminant particles present and little on the substrate, the breakdown event itself is greatly affected by the substrate-niobium, heavily oxidized niobium, electropolished copper, and diamond-machined copper cathodes lead to different kinds of breakdown events. By studying DC voltage breakdown we hope to learn more details about the processes involved in the transition from field emission to catastrophic arcing and the cratering of the surface; as well as learning how to prevent breakdown, we would like to learn how to cause breakdown, which could be important when ''processing'' cavities to reduce field emission. (author)

  11. Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

    Science.gov (United States)

    Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

    2011-09-01

    Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.

  12. Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

    Science.gov (United States)

    Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

    2018-05-01

    Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

  13. High-efficiency dielectric barrier Xe discharge lamp: theoretical and experimental investigations

    International Nuclear Information System (INIS)

    Beleznai, Sz; Mihajlik, G; Agod, A; Maros, I; Juhasz, R; Nemeth, Zs; Jakab, L; Richter, P

    2006-01-01

    A dielectric barrier Xe discharge lamp producing vacuum-ultraviolet radiation with high efficiency was investigated theoretically and experimentally. The cylindrical glass body of the lamp is equipped with thin strips of metal electrodes applied to diametrically opposite sides of the outer surface. We performed a simulation of discharge plasma properties based on one-dimensional fluid dynamics and also assessed the lamp characteristics experimentally. Simulation and experimental results are analysed and compared in terms of voltage and current characteristics, power input and discharge efficiency. Using the proposed lamp geometry and fast rise-time short square pulses of the driving voltage, an intrinsic discharge efficiency around 56% was predicted by simulation, and more than 60 lm W -1 lamp efficacy (for radiation converted into visible green light by phosphor coating) was demonstrated experimentally

  14. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  15. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  16. Life estimation and analysis of dielectric strength, hydrocarbon backbone and oxidation of high voltage multi stressed EPDM composites

    Science.gov (United States)

    Khattak, Abraiz; Amin, Muhammad; Iqbal, Muhammad; Abbas, Naveed

    2018-02-01

    Micro and nanocomposites of ethylene propylene diene monomer (EPDM) are recently studied for different characteristics. Study on life estimation and effects of multiple stresses on its dielectric strength and backbone scission and oxidation is also vital for endorsement of these composites for high voltage insulation and other outdoor applications. In order to achieve these goals, unfilled EPDM and its micro and nanocomposites are prepared at 23 phr micro silica and 6 phr nanosilica loadings respectively. Prepared samples are energized at 2.5 kV AC voltage and subjected for a long time to heat, ultraviolet radiation, acid rain, humidity and salt fog in accelerated manner in laboratory. Dielectric strength, leakage current and intensity of saturated backbone and carbonyl group are periodically measured. Loss in dielectric strength, increase in leakage current and backbone degradation and oxidation were observed in all samples. These effects were least in the case of EPDM nanocomposite. The nanocomposite sample also demonstrated longest shelf life.

  17. High spatial resolution in laser-induced breakdown spectroscopy of expanding plasmas

    International Nuclear Information System (INIS)

    Siegel, J.; Epurescu, G.; Perea, A.; Gordillo-Vazquez, F.J.; Gonzalo, J.; Afonso, C.N.

    2005-01-01

    We report a technique that is able to achieve high spatial resolution in the measurement of the temporal and spectral emission characteristics of laser-induced expanding plasmas. The plasma is imaged directly onto the slit of an imaging spectrograph coupled to a time-gated intensified camera, with the plasma expansion direction being parallel to the slit extension. In this way, a single hybrid detection system is used to acquire the spatial, spectral and temporal characteristics of the laser induced plasma. The parallel acquisition approach of this technique ensures a much better spatial resolution in the expansion direction, reproducibility and data acquisition speed than commonly obtained by sequential measurements at different distances from the target. We have applied this technique to study the laser-induced plasma in LiNbO 3 and Bi 12 Ge 1 O 20 , revealing phenomena not seen in such detail with standard instruments. These include extreme line broadening up to a few nanometers accompanied by self-absorption near the target surface, as well as different ablation and expansion dynamics for the different species ejected. Overall, the high precision and wealth of quantitative information accessible with this technique open up new possibilities for the study of fundamental plasma expansion processes during pulsed laser ablation

  18. The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

    International Nuclear Information System (INIS)

    Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

    2014-01-01

    One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd 2 O 3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures

  19. A model of electric breakdown in polycrystalline semiconductors with highly nonlinear I - V characteristics

    International Nuclear Information System (INIS)

    Yildirim, E.H.; Tanatar, B.; Canessa, E.

    1993-07-01

    A deterministic algorithm to study the nonlinear current-voltage characteristics of polycrystalline semiconductors, such as ZnO-based metal oxide varistors, under dc bias and at room temperature is developed based on the electrical properties of individual grain boundaries. Assuming a thermionic emission type mechanism between individual grains and a nonuniform distribution of barrier heights at grain boundaries, the set of nonlinear Kirchhoff equations that determines the macroscopic current across the specimen and the nonlinearity coefficient α is solved numerically. The applied voltage dependence of the barrier height is found to be crucial to obtain α values reaching ∼50, indicating high nonlinearity as required by potential commercial applications. (author). 20 refs, 3 figs

  20. Break-down of Losses in High Performing Metal-Supported Solid Oxide Fuel Cells

    DEFF Research Database (Denmark)

    Kromp, Alexander; Nielsen, Jimmi; Blennow Tullmar, Peter

    2012-01-01

    Metal supported SOFC designs offer competitive advantages such as reduced material costs and improved mechanical robustness. On the other hand, disadvantages might arise due to possible corrosion of the porous metal parts during processing and operation at high fuel utilization. In this paper we...... in hydrogen. The electrochemically active parts were applied by infiltrating CGO-Ni precursor solution into the porous metal and anode backbone and screenprinting (La,Sr)(Co,Fe)O3-based cathodes. To prevent a solid state reaction between cathode and zirconia electrolyte, CGO buffer layers were applied...... in between cathode and electrolyte. The detailed electrochemical characterization by means of impedance spectroscopy and a subsequent data analysis by the distribution of relaxation times enabled us to separate the different loss contributions in the cell. Based on an appropriate equivalent circuit model...

  1. Dielectric and thermal properties of isotactic polypropylene/hexagonal boron nitride composites for high-frequency applications

    International Nuclear Information System (INIS)

    Takahashi, Susumu; Imai, Yusuke; Kan, Akinori; Hotta, Yuji; Ogawa, Hirotaka

    2014-01-01

    Highlights: • The degree of orientation of the hBN could be controlled by the fabrication process. • The dielectric constants of composites ranged between 2.25 and 3.39. • The dielectric loss of composites was on the order of 10 −4 for all compositions. • The thermal conductivity were improved by controlling orientation of hBN. - Abstract: Dielectric composites aimed for high frequency applications were prepared by using anisotropic hexagonal boron nitride (hBN) particles as a fillers and isotactic polypropylene (iPP) as polymer matrix. Dielectric and thermal properties of the composites were studied, focusing on the filler orientation in the plate-shape specimens and filler concentration up to 40 vol%. The degree of orientation of the filler was controlled by the composite fabrication process. Hot-pressing gave relatively random orientation of the filler in the matrix, while injection molding induced a high orientation. Dielectric constant (ε r ) of the composites ranged between 2.25 and 3.39. The estimation of ε r based on the Bruggeman mixing model agreed well with the measured value. Low dielectric losses (tan δ) at microwave frequencies, on the order of 10 −4 , were obtained for all the compositions. Through-thickness thermal conductivity (k) of the hot-pressed samples showed a drastic increase with increasing the filler concentration, reaching up to 2.1 W/m K at 40 vol% of hBN. The filler concentration dependence of k was less significant for the injection molded composites. In-plane thermal expansion was almost independent on the filler orientation, while the coefficient of thermal expansion for the thickness direction of the hot-pressed sample was reduced to approximately half of the injection molded counterpart. These differences in thermal conductivity and thermal expansion are thought to arise from the difference in hBN filler orientation

  2. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

    International Nuclear Information System (INIS)

    Li Qi; Wang Weidong; Zhao Qiuming; Wei Xueming

    2012-01-01

    A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance. (semiconductor devices)

  3. A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

    Science.gov (United States)

    Arevalo, L.; Wu, D.; Jacobson, B.

    2013-08-01

    The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

  4. Hydrodynamical flows in dielectric liquid in strong inhomogeneous pulsed electric field

    International Nuclear Information System (INIS)

    Tereshonok, Dmitry V; Babaeva, Natalia Yu; Naidis, George V; Smirnov, Boris M

    2016-01-01

    We consider a hydrodynamical flow of dielectric liquid near a high voltage needle-shaped electrode in a strong inhomogeneous pulsed electric field. It was shown that under a small rise time, a negative pressure area (pressure is less than critical pressure) appears near the electrode leading to the formation of a cavity in which electric breakdown can develop. A comparison of the dependence of the velocity of fluid near an electrode for two cases (taking into account the dependence of dielectric permeability of the liquid on the electric field and without taking it into account) was made. A field-dependent dielectric coefficient leads to the appearance of two local maximums of the velocities and increases the minimum pressure, thus lowering the possibility of cavitation. While under the constant value of dielectric permeability only one local maximum appears. (paper)

  5. A high voltage DC-DC converter driving a Dielectric Electro Active Polymer actuator for wind turbine flaps

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    The Dielectric Electro Active Polymer (DEAP) material is a very thin (~80 μm) silicone elastomer film with a compliant metallic electrode layer on both sides. The DEAP is fundamentally a capacitor that is capable of very high strain. The property that the polymer changes its shape, as a result...

  6. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    Directory of Open Access Journals (Sweden)

    Laura B. Ruppalt

    2014-12-01

    Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  7. Experimental study of dielectric characteristics of rocks in a high-frequency field

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, S.

    1982-01-01

    Dielectric permeability (epsilon) as an electrical property of rocks has been used in recent years as the new parameter of well logging. Consequently a study was made of the dependence of epsilon of rocks on different factors. It was found that epsilon of rocks depends not only on minerals contained in them, their properties and distribution, but also on the frequency of the field, temperature and content of the mineralized water in the bed. It was indicated that for sedimentary rocks with low content of clay, their epsilon depends mainly on the content of water, and between epsilon and water saturation there is an approximately rectilinear relationship. The epsilon of dry and wet rocks differs 3-5-fold, so that with the help of epsilon one can determine flooding of the bed. Since epsilon increases with a rise in the content of clay in the rocks, with dielectric logging of the flooded bed it is necessary to make the corresponding correction. Under conditions of frequency of the field 60 Mz, epsilon in the NaCl solution decreases with an increase in mineralization, but the epsilon of the soda-containing rocks increases with an increase in mineralization. However, with mineralization less than 1 x 10/sup -2/, its influence on epsilon does not exceed 10%. The epsilon of water containing rocks diminishes with a rise in temperature. In addition, the epsilon of rocks drops with an increase in field frequency. With an increase in frequency, there is a decrease in influence of different factors (mineralization, distribution of minerals, content of clay, etc.) on the epsilon of rocks. At high frequencies, a distinct relationship is observed only between the epsilon and the water content of the rocks. Consequently it is expedient to improve the frequency of measurement to reveal the flooded beds. According to the data of dispersion of epsilon with different frequencies, one can determine the content of quality of the bed using electromagnetic logging.

  8. A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

    Science.gov (United States)

    Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

    2018-02-01

    We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

  9. Enhancing breakdown strength and energy storage performance of PVDF-based nanocomposites by adding exfoliated boron nitride

    Science.gov (United States)

    Xie, Yunchuan; Wang, Jian; Yu, Yangyang; Jiang, Wanrong; Zhang, Zhicheng

    2018-05-01

    Polymer/ceramic nanocomposites are promising dielectrics for high energy storage density (Ue) capacitors. However, their low breakdown strength (Eb) and high dielectric loss due to heterogeneous structure seriously limit their applications under high electric field. In this work, boron nitride nano-sheets (BNNS) exfoliated from BN particles were introduced into PVDF-based BaTiO3 (mBT) binary composites to reduce the dielectric loss and promote the Ue. The effects of BNNS on the dielectric properties, especially breakdown resistance, and energy storage performance of the resultant composites were carefully investigated by comparing with the composites without BNNS. The introduction of BNNS could significantly improve Eb and Ue of the final composites. Ternary composite with particle contents of 6 wt% BNNS and 5 wt% mBT presented a Eb of about 400 MV/m and Ue of 5.2 J/cm3, which is 40% and 30% superior to that of the binary composite with 5 wt% mBT, respectively. That may be attributed to the 2D structure, high bulk electrical resistivity, and fine dispersion in PVDF of BNNS, which is acting as an efficient insulating barrier against the leakage current and charges conduction. The depression effect of BNNS onto the charge mobility and the interfacial polarization of the polymer composites is finely addressed, which may offer a promising strategy for the fabrication of high-k polymer composites with low loss.

  10. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    Science.gov (United States)

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-18

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  11. High energy storage property and breakdown strength of Bi{sub 0.5}(Na{sub 0.82}K{sub 0.18}){sub 0.5}TiO{sub 3} ceramics modified by (Al{sub 0.5}Nb{sub 0.5}){sup 4+} complex-ion

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yangyang [Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004 (China); Xu, Jiwen, E-mail: csuxjw@126.com [Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004 (China); Guangxi Experiment Center of Information Science, Guilin 541004 (China); Yang, Ling; Zhou, Changrong [Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004 (China); Guangxi Experiment Center of Information Science, Guilin 541004 (China); Lu, Xiaopeng; Yuan, Changlai; Li, Qingning; Chen, Guohua; Wang, Hua [Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004 (China)

    2016-05-05

    The influence of B-site (Al{sub 0.5}Nb{sub 0.5}){sup 4+} complex-ion substitution on the phase transition, microstructure, dielectric, ferroelectric, and energy-storage properties of Bi{sub 0.5}(Na{sub 0.82}K{sub 0.18}){sub 0.5}Ti{sub 1–x}(Al{sub 0.5}Nb{sub 0.5}){sub x}O{sub 3} (BNKT-xAN) ceramics were systematically investigated. BNKT-xAN ceramics showed single-phase perovskite structure without an obvious phase transition after adding AN. Compact and uniform microstructure with almost the same grain morphology and size was obtained. The AN doping produced slimmer P-E loops and thus improved energy storage property. Meanwhile, the energy storage density increases drastically, and a maximum value of 1.41 J/cm{sup 3} at 105 kV/cm was achieved in BNKT-0.08AN through increasing greatly its breakdown strength with more AN content. The temperature dependence of dielectric constant and dielectric loss of BNKT-xAN ceramics illustrated the obvious relaxor phase transition characteristics. Low ionic conductivity and electronic conductivity indicated the BNKT-xAN ceramics have excellent dielectric properties. These results indicated that the BNKT-AN system may be a promising lead-free material for high energy storage density capacitor. - Highlights: • The (Al{sub 0.5}Nb{sub 0.5}){sup 4+} B-site complex ions were introduced into BNT-BKT system. • The P-E loops were pinched and the P{sub r} and E{sub c} were decreased by complex ions. • Impedance spectrum revealed excellent dielectric property of complex-ion modified BNT-BNK. • Breakdown strength of BNT-BKT was enhanced by complex ions. • The energy storage density was improved to 1.41 J/cm{sup 3} by complex ions.

  12. Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

    Science.gov (United States)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.

    2017-04-01

    In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been implemented with various high-k dielectric. The leakage current in the device is analysed in detail by obtaining the band structure for different high-k dielectric material. It is noticed that with increasing dielectric constant the device provides more resistance for the direct tunnelling of electron in off state. The gate oxide capacitance also shows 0.1 μF improvement with Hafnium Oxide (HfO2) than Silicon Oxide (SiO2). This paved the way for a better memory application when high-k dielectric is used. The Six Transistor (6T) Static Random Access Memory (SRAM) circuit implemented shows 41.4% improvement in read noise margin for HfO2 than SiO2. It also shows 37.49% improvement in write noise margin and 30.16% improvement in hold noise margin for HfO2 than SiO2.

  13. AC BREAKDOWN IN GASES

    Science.gov (United States)

    electron- emission (multipactor) region, and (3) the low-frequency region. The breakdown mechanism in each of these regions is explained. An extensive bibliography on AC breakdown in gases is included.

  14. Electromechanical performance analysis of inflated dielectric elastomer membrane for micro pump applications

    Science.gov (United States)

    Saini, Abhishek; Ahmad, Dilshad; Patra, Karali

    2016-04-01

    Dielectric elastomers have received a great deal of attention recently as potential materials for many new types of sensors, actuators and future energy generators. When subjected to high electric field, dielectric elastomer membrane sandwiched between compliant electrodes undergoes large deformation with a fast response speed. Moreover, dielectric elastomers have high specific energy density, toughness, flexibility and shape processability. Therefore, dielectric elastomer membranes have gained importance to be applied as micro pumps for microfluidics and biomedical applications. This work intends to extend the electromechanical performance analysis of inflated dielectric elastomer membranes to be applied as micro pumps. Mechanical burst test and cyclic tests were performed to investigate the mechanical breakdown and hysteresis loss of the dielectric membrane, respectively. Varying high electric field was applied on the inflated membrane under different static pressure to determine the electromechanical behavior and nonplanar actuation of the membrane. These tests were repeated for membranes with different pre-stretch values. Results show that pre-stretching improves the electromechanical performance of the inflated membrane. The present work will help to select suitable parameters for designing micro pumps using dielectric elastomer membrane. However this material lacks durability in operation.This issue also needs to be investigated further for realizing practical micro pumps.

  15. Study of dielectric liquids at room temperature for high energy x ray Tomography

    International Nuclear Information System (INIS)

    Lepert, S.

    1989-09-01

    The detection of X rays by means of a dielectric liquid detector system, at room temperature, is discussed. The physico-chemical properties of a dielectric liquid, the construction of a cleaning device and of two electrode configurations, and the utilization of different amplifier models are studied. The results allowed the analysis and characterization of the behavior of the dielectric liquid under X ray irradiation. Data obtained is confirmed by computerized simulation. The choice of Tetramethyl-germanium for the X ray tomography, applied in nondestructive analysis, is explained. The investigation of the system parameters allowed the setting of the basis of a prototype project for a multi-detector [fr

  16. Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

    Science.gov (United States)

    Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

    2018-03-01

    The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

  17. Cellulose Breakdown

    Science.gov (United States)

    Greenler, John; Nye, Leith; Tangen, Travis

    2014-01-01

    Production of liquid fuels such as ethanol from fibrous plant biomass could potentially be a significant sustainable component of the U.S. energy portfolio. Engineers and scientists are actively researching this area, and high school students can engage in this contemporary inquiry process by experimenting with different types of biomass, varying…

  18. Palladium Gate All Around - Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor

    Science.gov (United States)

    Madan, Jaya; Chaujar, Rishu

    2016-12-01

    The paper presents a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism. Here, the Palladium supported silicon dioxide is used as a sensing media and sensing relies on the interaction of hydrogen with Palladium-SiO2-Si. The high surface to volume ratio in the case of cylindrical GAA structure enhances the fortuities for surface reactions between H2 gas and Pd, and thus improves the sensitivity and stability of the sensor. Behaviour of the sensor in presence of hydrogen and at elevated temperatures is discussed. The conduction path of the sensor which is dependent on sensors radius has also been varied for the optimized sensitivity and static performance analysis of the sensor where the proposed design exhibits a superior performance in terms of threshold voltage, subthreshold swing, and band to band tunneling rate. Stability of the sensor with respect to temperature affectability has also been studied, and it is found that the device is reasonably stable and highly sensitive over the bearable temperature range. The successful utilization of HD-GAA-TFET in gas sensors may open a new door for the development of novel nanostructure gas sensing devices.

  19. High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths

    Science.gov (United States)

    Emani, Naresh Kumar; Khaidarov, Egor; Paniagua-Domínguez, Ramón; Fu, Yuan Hsing; Valuckas, Vytautas; Lu, Shunpeng; Zhang, Xueliang; Tan, Swee Tiam; Demir, Hilmi Volkan; Kuznetsov, Arseniy I.

    2017-11-01

    The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430-470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.

  20. Analysis of Dielectric Electro Active Polymer Actuator and its High Voltage Driving Circuits

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Huang, Lina; Zhang, Zhe

    2012-01-01

    Actuators based on dielectric elastomers have promising applications in artificial muscles, space robotics, mechatronics, micro-air vehicles, pneumatic and electric automation technology, heating valves, loud speakers, tissue engineering, surgical tools, wind turbine flaps, toys, rotary motors...

  1. Propagation of high-current fast electron beam in a dielectric target

    International Nuclear Information System (INIS)

    Klimo, O.; Debayle, A.; Tikhonchuk, V.T.

    2006-01-01

    Complete test of publication follows. A relativistic electron beam with very high current density may be produced during the interaction of a short high intensity laser pulse with a solid target. In Fast Ignition approach to Inertial Confinement Fusion, such beam is supposed to heat a part of the precompressed DT fuel pellet to the conditions of an efficient ignition. For successful implementation of Fast Ignition understanding the propagation and energy deposition of the beam is crucial. A number of processes, mostly associated with the return current, are dissipating the energy of the beam or inhibiting its collimated transport, namely the filamentation. Weibel, two-stream or the recently proposed ionization instability. Ionization instability may develop in a solid dielectric target due to the dependence of the propagation velocity of the beam on the beam density. To study the propagation of high current electron beam in dielectric target, we use a one-dimensional relativistic electrostatic simulation code based on the Particle in Cell method. The code includes ionization processes in dielectric material and collisions of newly generated cold electrons. The current density of the relativistic electron beam used in this work is in the range 3-300 GA/cm 2 , while its length roughly corresponds to the beam, produced by a 40 fs laser pulse. Propagation of the beam in the polyethylene target is studied. The code is complemented by an analytical model, which is applicable og a wider range of beam parameters that are currently beyond our computational possibilities. When the head of the beam enters the plastic target, electric field grows rapidly in consequence of the charge separation and it starts to ionize atoms. In the maximum of the field, which is less than 10% of the atomic field, the density of new free electrons is two orders of magnitude higher than the beam density, which is enough for the current neutralization. Cold electrons are accelerated by the field

  2. High-frequency dielectric study of proustite crystals Ag3AsS3

    Science.gov (United States)

    Bordovsky, V. A.; Gunia, N. Yu; Castro, R. A.

    2014-12-01

    The dielectric properties of the crystals proustite in the frequency of 106-109 Hz and a temperature range of 173 to 473 K were studied. The dispersion of the dielectric parameters indicates the existence of non-Debye relaxation mechanism correlates with structural changes in the phase transition region. The charge transfer is temperature activated with an activation energy of 2.40 ± 0.01 eV.

  3. Multiple helical modes of vortex breakdown

    DEFF Research Database (Denmark)

    Sørensen, Jens Nørkær; Naumov, I. V.; Okulov, Valery

    2011-01-01

    Experimental observations of vortex breakdown in a rotating lid-driven cavity are presented. The results show that vortex breakdown for cavities with high aspect ratios is associated with the appearance of stable helical vortex multiplets. By using results from stability theory generalizing Kelvi......’s problem on vortex polygon stability, and systematically exploring the cavity flow, we succeeded in identifying two new stable vortex breakdown states consisting of triple and quadruple helical multiplets....

  4. Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

    International Nuclear Information System (INIS)

    Ma Xiao-Hua; Zhang Ya-Man; Chen Wei-Wei; Wang Xin-Hua; Yuan Ting-Ting; Pang Lei; Liu Xin-Yu

    2015-01-01

    In this paper, the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors (HEMTs), featuring a 50-nm and a 150-nm GaN thick channel layer, respectively, are compared. The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage (BV off ). Device simulation indicates that thickening the channel increases the drain-induced barrier lowering (DIBL) but reduces the lateral electric field in the channel and buffer underneath the gate. The increase of BV off in the thick channel device is due to the reduction of the electric field. These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BV off in AlGaN/GaN HEMTs. (paper)

  5. Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

    Science.gov (United States)

    Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

    2016-01-01

    Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced–up to about 10 times – by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10−1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing. PMID:27767184

  6. Thermal dielectric function

    International Nuclear Information System (INIS)

    Moneta, M.

    1999-01-01

    Thermal dielectric functions ε(k,ω) for homogeneous electron gas were determined and discussed. The ground state of the gas is described by the Fermi-Dirac momentum distribution. The low and high temperature limits of ε(k,ω) were related to the Lindhard dielectric function and to ε(k, omega) derived for Boltzmann and for classical momentum distributions, respectively. (author)

  7. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    Science.gov (United States)

    Williamson, James M.; Trump, Darryl D.; Bletzinger, Peter; Ganguly, Biswa N.

    2006-10-01

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s-1. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ~3 × 1015 cm-3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ~8.5 × 1015 cm-3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

  8. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, James M [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Trump, Darryl D [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Bletzinger, Peter [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Ganguly, Biswa N [Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433-7919 (United States)

    2006-10-21

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s{sup -1}. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of {approx}3 x 10{sup 15} cm{sup -3} at 25 W. The maximum ozone production achieved by short-pulse excitation was {approx}8.5 x 10{sup 15} cm{sup -3} at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

  9. Vapor Phase Polymerization Deposition Conducting Polymer Nanocomposites on Porous Dielectric Surface as High Performance Electrode Materials

    Institute of Scientific and Technical Information of China (English)

    Ya jie Yang; Luning Zhang; Shibin Li; Zhiming Wang; Jianhua Xu; Wenyao Yang; Yadong Jiang

    2013-01-01

    We report chemical vapor phase polymerization(VPP) deposition of poly(3,4-ethylenedioxythiophene)(PEDOT) and PEDOT/graphene on porous dielectric tantalum pentoxide(Ta2O5) surface as cathode films for solid tantalum electrolyte capacitors. The modified oxidant/oxidant-graphene films were first deposited on Ta2O5 by dip-coating, and VPP process was subsequently utilized to transfer oxidant/oxidant-graphene into PEDOT/PEDOT-graphene films. The SEM images showed PEDOT/PEDOT-graphene films was successfully constructed on porous Ta2O5 surface through VPP deposition, and a solid tantalum electrolyte capacitor with conducting polymer-graphene nano-composites as cathode films was constructed. The high conductivity nature of PEDOT-graphene leads to resistance decrease of cathode films and lower contact resistance between PEDOT/graphene and carbon paste. This nano-composite cathode films based capacitor showed ultralow equivalent series resistance(ESR) ca. 12 m? and exhibited excellent capacitance-frequency performance, which can keep 82% of initial capacitance at 500 KHz. The investigation on leakage current revealed that the device encapsulation process has no influence on capacitor leakage current, indicating the excellent mechanical strength of PEDOT/PEDOT-gaphene films. This high conductivity and mechanical strength of graphene-based polymer films shows promising future for electrode materials such as capacitors, organic solar cells and electrochemical energy storage devices.

  10. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    International Nuclear Information System (INIS)

    Williamson, James M; Trump, Darryl D; Bletzinger, Peter; Ganguly, Biswa N

    2006-01-01

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s -1 . The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ∼3 x 10 15 cm -3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ∼8.5 x 10 15 cm -3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level

  11. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  12. PHENIX Work Breakdown Structure

    International Nuclear Information System (INIS)

    1994-02-01

    The Work Breakdown Structure (WBS) Book begins with this Overview section, which contains the high-level summary cost estimate, the cost profile, and the global construction schedule. The summary cost estimate shows the total US cost and the cost in terms of PHENIX construction funds for building the PHENIX detector. All costs in the WBS book are shown in FY 1993 dollars. Also shown are the institutional and foreign contributions, the level of pre-operations funding, and the cost of deferred items. Pie charts are presented at PHENIX WBS level 1 and 2 that show this information. The PHENIX construction funds are shown broken down to PHENIX WBS level 3 items per fiscal year, and the resulting profile is compared to the RHIC target profile. An accumulated difference of the two profiles is also shown. The PHENIX global construction schedule is presented at the end of the Overview section. Following the Overview are sections for each subsystem. Each subsystem section begins with a summary cost estimate, cost profile, and critical path. The total level 3 cost is broken down into fixed costs (M ampersand S), engineering costs (EDIA) and labor costs. Costs are further broken down in terms of PHENIX construction funds, institutional and foreign contributions, pre-operations funding, and deferred items. Also shown is the contingency at level 3 and the level 4 breakdown of the total cost. The cost profile in fiscal years is shown at level 3. The subsystem summaries are followed by the full cost estimate and schedule sheets for that subsystem. These detailed sheets are typically carried down to level 7 or 8. The cost estimate shows Total, M ampersand S, EDIA, and Labor breakdowns, as well as contingency, for each WBS entry

  13. Thermally Stable Siloxane Hybrid Matrix with Low Dielectric Loss for Copper-Clad Laminates for High-Frequency Applications.

    Science.gov (United States)

    Kim, Yong Ho; Lim, Young-Woo; Kim, Yun Hyeok; Bae, Byeong-Soo

    2016-04-06

    We report vinyl-phenyl siloxane hybrid material (VPH) that can be used as a matrix for copper-clad laminates (CCLs) for high-frequency applications. The CCLs, with a VPH matrix fabricated via radical polymerization of resin blend consisting of sol-gel-derived linear vinyl oligosiloxane and bulky siloxane monomer, phenyltris(trimethylsiloxy)silane, achieve low dielectric constant (Dk) and dissipation factor (Df). The CCLs with the VPH matrix exhibit excellent dielectric performance (Dk = 2.75, Df = 0.0015 at 1 GHz) with stability in wide frequency range (1 MHz to 10 GHz) and at high temperature (up to 275 °C). Also, the VPH shows good flame resistance without any additives. These results suggest the potential of the VPH for use in high-speed IC boards.

  14. Artificial dispersion via high-order homogenization: magnetoelectric coupling and magnetism from dielectric layers

    Science.gov (United States)

    Liu, Yan; Guenneau, Sébastien; Gralak, Boris

    2013-01-01

    We investigate a high-order homogenization (HOH) algorithm for periodic multi-layered stacks. The mathematical tool of choice is a transfer matrix method. Expressions for effective permeability, permittivity and magnetoelectric coupling are explored by frequency power expansions. On the physical side, this HOH uncovers a magnetoelectric coupling effect (odd-order approximation) and artificial magnetism (even-order approximation) in moderate contrast photonic crystals. Comparing the effective parameters' expressions of a stack with three layers against that of a stack with two layers, we note that the magnetoelectric coupling effect vanishes while the artificial magnetism can still be achieved in a centre-symmetric periodic structure. Furthermore, we numerically check the effective parameters through the dispersion law and transmission property of a stack with two dielectric layers against that of an effective bianisotropic medium: they are in good agreement throughout the low-frequency (acoustic) band until the first stop band, where the analyticity of the logarithm function of the transfer matrix () breaks down. PMID:24101891

  15. Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

    Directory of Open Access Journals (Sweden)

    Chao-Te Liu

    2012-01-01

    Full Text Available The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1, a large current ratio (>103 and a low operation voltage (<6 V. Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

  16. High frequency dielectric reference materials BCR projekt 43. Final report of phase 1

    International Nuclear Information System (INIS)

    Chantry, G.

    1980-01-01

    The Group of High Frequency Specialists from Belgium, France, Germany, The Netherlands and the UK, was awarded contracts in 1975 to carry out a programme of measurements on the high frequency dielectric properties of materials. The object of this first phase of a projected three phase programme was to establish the reliability of existing methods of measurement and to examine the possibilities of specifying and producing some standard reference materials, both liquid and solid, which could be used for calibrating and checking the performance of industrial measurement equipment. The liquids chosen for the first phase were cyclohexane, cis and trans decalin, chlorobenzene and 0.1, 1, and 10% solutions of chlorobenzene in cyclohexane. Each group had a limited frequency range over which it could make meaningful measurements but there was sufficient overlap to ensure that all random and systematic errors could be quantitatively assayed. The real (epsilon') and imaginary (epsilon'') components of the complex permittivity for all the liquids were measured over the frequency range 10 - 3,000 GHz and for the two most lossy liquids (chlorobenzene and 10% chlorobenzene in cyclohexane) this range was extended downwards to one GHz. The programme established for the first time the possible experimental imprecisions to be expected in high frequency dielecric measurements and showed that the chosen liquids could be useful standard reference materials if sufficiently pure specimens could be obtained commercially at a reasonable price. The programme did however reveal an unexpected snag in that the liquids, especially cyclohexane, were found to be rather more liable to contamination than expected. Since cyclohexane is a very low-loss liquid, only a small amount of a lossy contaminant need be absorbed to make the observed loss increase dramatically. This report contains all the measured results in both tabular and graphical form and in addition full technical details are given of the

  17. Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics

    Directory of Open Access Journals (Sweden)

    Nenad Novkovski

    2017-01-01

    Full Text Available Capacitance of metal–insulator–Si structures containing high permittivity dielectric exhibits complicated behaviour when voltage and frequency dependencies are studied. From our study on metal (Al, Au, W–Ta2O5/SiO2–Si structures, we identify serial C-R measurement mode to be more convenient for use than the parallel one usually used in characterization of similar structures. Strong frequency dependence that is not due to real variations in the dielectric permittivity of the layers is observed. Very high capacitance at low frequencies is due to the leakage in Ta2O5 layer. We found that the above observation is mainly due to different leakage current mechanisms in the two different layers composing the stack. The effect is highly dependent on the applied voltage, since the leakage currents are strongly nonlinear functions of the electric field in the layers. Additionally, at low frequencies, transition currents influence the measured value of the capacitance. From the capacitance measurements several parameters are extracted, such as capacitance in accumulation, effective dielectric constant, and oxide charges. Extracting parameters of the studied structures by standard methods in the case of high-κ/interfacial layer stacks can lead to substantial errors. Some cases demonstrating these deficiencies of the methods are presented and solutions for obtaining better results are proposed.

  18. High performance unipolar inverters by utilizing organic field-effect transistors with ultraviolet/ozone treated polystyrene dielectric

    International Nuclear Information System (INIS)

    Huang, Wei; Yu, Xinge; Fan, Huidong; Yu, Junsheng

    2014-01-01

    High performance unipolar inverters based on a significant variation of threshold voltage (V th ) of organic field-effect transistors (OFETs), which was realized by introducing UV/ozone (UVO) treatment to polystyrene (PS) dielectric, were fabricated. A controllable V th shift of more than 10 V was obtained in the OFETs by adjusting the UVO treating time, and the unipolar inverters exhibited inverting voltage near 1/2 driving voltage and a noise margin of more than 70% of ideal value. From the analysis of scanning electron microscopy, atom force microscopy, and X-ray photoelectron spectroscopy, the dramatic controllable V th of OFETs, which played a key role in high performance unipolar inverters, was attributed to the newly generated oxygen functional groups in the PS dielectric induced by UVO treatment.

  19. Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol-gel metal-oxide dielectrics and semiconductors.

    Science.gov (United States)

    Jo, Jeong-Wan; Kim, Jaekyun; Kim, Kyung-Tae; Kang, Jin-Gu; Kim, Myung-Gil; Kim, Kwang-Ho; Ko, Hyungduk; Kim, Jiwan; Kim, Yong-Hoon; Park, Sung Kyu

    2015-02-18

    Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates.

    Science.gov (United States)

    Chen, Jianyi; Guo, Yunlong; Jiang, Lili; Xu, Zhiping; Huang, Liping; Xue, Yunzhou; Geng, Dechao; Wu, Bin; Hu, Wenping; Yu, Gui; Liu, Yunqi

    2014-03-05

    By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 μm. The carrier mobility can reach about 5650 cm(2) V(-1) s(-1) , which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Differential Thermal Analysis and Dielectric Studies on 2-Methyl-2-Nitro-Propane under High Pressure

    Science.gov (United States)

    Büsing, D.; Jenau, M.; Reuter, J.; Würflinger, A.; Tamarit, J. Li.

    1995-05-01

    Differential thermal analysis and dielectric studies under pressures up to 300 MPa and temperatures of about 200 to 350 K have been performed on 2-methyl-2-nitro-propane (TBN). TBN displays an orientationally disordered phase (ODIC), solid I, and two non-plastic phases, solids II and III. The coexistence region of the plastic phase I increases with increasing pressure, whereas the low-temperature phase II apparently vanishes at a triple point I, II, III, above 300 MPa. The static permittivity increases on freezing, characterizing the solid I as an ODIC phase. In the frame of the Kirkwood-Onsager-Fröhlich theory the g-factor is about unity, discounting specific dielectric correlations. The dielectric behaviour of TBN is similar to previously studied related compounds, such as 2-chloro-2-methyl-propane or 2-brome- 2-methyl-propane

  2. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  3. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    International Nuclear Information System (INIS)

    Jiang Hao; Hong Lianggou; Venkatasubramanian, N.; Grant, John T.; Eyink, Kurt; Wiacek, Kevin; Fries-Carr, Sandra; Enlow, Jesse; Bunning, Timothy J.

    2007-01-01

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant (ε r ) and dielectric loss (tan δ) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F b ) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F b of 610 V/μm, an ε r of 3.07, and a tan δ of 7.0 x 10 -3 at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss

  4. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Directory of Open Access Journals (Sweden)

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  5. Effect of grain size on structural and dielectric properties of barium titanate piezoceramics synthesized by high energy ball milling

    Science.gov (United States)

    Verma, Narendra Kumar; Patel, Sandeep Kumar Singh; Kumar, Dinesh; Singh, Chandra Bhal; Singh, Akhilesh Kumar

    2018-05-01

    We have investigated the effect of sintering temperature on the densification behaviour, grain size, structural and dielectric properties of BaTiO3 ceramics, prepared by high energy ball milling method. The Powder x-ray diffraction reveals the tetragonal structure with space group P4mm for all the samples. The samples were sintered at four different temperatures, (T = 900°C, 1000°C, 1100°C, 1200°C and 1300°C). Density increased with increasing sintering temperature, reaching up to 97% at 1300°C. A grain growth was observed with increasing sintering temperature. Impedance analyses of the sintered samples at various temperatures were performed. Increase in dielectric constant and Curie temperature is observed with increasing sintering temperature.

  6. Studies of Electrolytic Conductivity of Some Polyelectrolyte Solutions: Importance of the Dielectric Friction Effect at High Dilution

    Directory of Open Access Journals (Sweden)

    Anis Ghazouani

    2013-01-01

    Full Text Available We present a general description of conductivity behavior of highly charged strong polyelectrolytes in dilute aqueous solutions taking into account the translational dielectric friction on the moving polyions modeled as chains of charged spheres successively bounded and surrounded by solvent molecules. A general formal limiting expression of the equivalent conductivity of these polyelectrolytes is presented in order to distinguish between two concentration regimes and to evaluate the relative interdependence between the ionic condensation effect and the dielectric friction effect, in the range of very dilute solutions for which the stretched conformation is favored. This approach is illustrated by the limiting behaviors of three polyelectrolytes (sodium heparinate, sodium chondroitin sulfate, and sodium polystyrene sulphonate characterized by different chain lengths and by different discontinuous charge distributions.

  7. Impulse breakdown of small air gap in electric field Part I: Influence ...

    African Journals Online (AJOL)

    The influence of barrier position on breakdown voltage in air dielectric has been investigated. Needle and Cone positive point electrodes were used and the effects of electrode curvature on barrier position for maximum breakdown voltage were compared, with air gap for the point to plane electrode fixed at 10 cm for all the ...

  8. Humidity and polarity influence on MIM PZT capacitor degradation and breakdown

    NARCIS (Netherlands)

    Wang, Jiahui; Salm, Cora; Houwman, Evert; Schmitz, Jurriaan; Nguyen, Minh

    2016-01-01

    This paper presents a reliability study on unpackaged metal-PZT-metal capacitors. Both ramped voltage stress (RVS) and time dependent dielectric breakdown (TDDB) measurements show that environmental humidity dramatically worsens the PZT reliability. Visible breakdown spots on the surface of PZT

  9. Reversible post-breakdown conduction in aluminum oxide-polymer capacitors

    NARCIS (Netherlands)

    Chen, Qian; Gomes, H.L.; Rocha, P.R.F.; Leeuw, de D.M.; Meskers, S.C.J.

    2013-01-01

    Aluminum/Al2O3/polymer/metal capacitors submitted to a low-power constant current stress undergo dielectric breakdown. The post-breakdown conduction is metastable, and over time the capacitors recover their original insulating properties. The decay of the conduction with time follows a power law

  10. Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10 −5 A/cm 2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D it ) is estimated to be as low as ∼2 × 10 12  cm −2  eV −1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D it value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications

  11. High-resolution nondestructive testing of multilayer dielectric materials using wideband microwave synthetic aperture radar imaging

    Science.gov (United States)

    Kim, Tae Hee; James, Robin; Narayanan, Ram M.

    2017-04-01

    Fiber Reinforced Polymer or Plastic (FRP) composites have been rapidly increasing in the aerospace, automotive and marine industry, and civil engineering, because these composites show superior characteristics such as outstanding strength and stiffness, low weight, as well as anti-corrosion and easy production. Generally, the advancement of materials calls for correspondingly advanced methods and technologies for inspection and failure detection during production or maintenance, especially in the area of nondestructive testing (NDT). Among numerous inspection techniques, microwave sensing methods can be effectively used for NDT of FRP composites. FRP composite materials can be produced using various structures and materials, and various defects or flaws occur due to environmental conditions encountered during operation. However, reliable, low-cost, and easy-to-operate NDT methods have not been developed and tested. FRP composites are usually produced as multilayered structures consisting of fiber plate, matrix and core. Therefore, typical defects appearing in FRP composites are disbondings, delaminations, object inclusions, and certain kinds of barely visible impact damages. In this paper, we propose a microwave NDT method, based on synthetic aperture radar (SAR) imaging algorithms, for stand-off imaging of internal delaminations. When a microwave signal is incident on a multilayer dielectric material, the reflected signal provides a good response to interfaces and transverse cracks. An electromagnetic wave model is introduced to delineate interface widths or defect depths from the reflected waves. For the purpose of numerical analysis and simulation, multilayered composite samples with various artificial defects are assumed, and their SAR images are obtained and analyzed using a variety of high-resolution wideband waveforms.

  12. High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Leontis, I.; Nassiopoulou, A. G., E-mail: A.Nassiopoulou@inn.demokritos.gr [INN, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos, Aghia Paraskevi, 153 10 Athens (Greece); Botzakaki, M. A.; Georga, S. N. [Department of Physics, University of Patras, 26 504 Rion (Greece)

    2016-06-28

    High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al{sub 2}O{sub 3}/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm{sup 2}. Capacitance-voltage (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.

  13. Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon

    Science.gov (United States)

    Kirsch, Paul Daniel

    Surfaces and interfaces play a critical role in the manufacture and function of silicon based integrated circuits. It is therefore reasonable to study the chemistries at these surfaces and interfaces to improve existing processes and to develop new ones. Model barium strontium titanate high-k dielectric systems have been deposited on ultrathin silicon oxynitride in ultrahigh vacuum. The resulting nanostructures are characterized with secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). An interfacial reaction between Ba and Sr atoms and SiOxNy was found to create silicates, BaSixOy or SrSi xOy. Inclusion of N in the interfacial oxide decreased silicate formation in both Ba and Sr systems. Furthermore, inclusion of N in the interfacial oxide decreased the penetration of Ba and Sr containing species, such as silicides and silicates. Sputter deposited HfO2 was studied on nitrided and unnitrided Si(100) surfaces. XPS and SIMS were used to verify the presence of interfacial HfSixOy and estimate its relative amount on both nitrided and unnitrided samples. More HfSixOy formed without the SiNx interfacial layer. These interfacial chemistry results are then used to explain the electrical measurements obtained from metal oxide semiconductor (MOS) capacitors. MOS capacitors with interfacial SiNx exhibit reduced leakage current and increased capacitance. Lastly, surface science techniques were used to develop a processing technique for reducing thin films of copper (II) and copper (I) oxide to copper. Deuterium atoms (D*) and methyl radicals (CH3*) were shown to reduce Cu 2+ and/or Cu1+ to Cu0 within 30 min at a surface temperature of 400 K under a flux of 1 x 1015 atoms/cm2s. Temperature programmed desorption experiments suggest that oxygen leaves the surface as D2O and CO2 for the D* and CH3* treated surfaces, respectively.

  14. High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

    International Nuclear Information System (INIS)

    Leontis, I.; Nassiopoulou, A. G.; Botzakaki, M. A.; Georga, S. N.

    2016-01-01

    High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al_2O_3/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm"2. Capacitance-voltage (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.

  15. Study on characteristics of high frequency dielectric barrier discharge for the removal of organic pollutant adsorbed on activated carbon

    Energy Technology Data Exchange (ETDEWEB)

    Qu, G.Z.; Li, G.F. [Dalian Univ. of Technology, Dalian (China). Inst. of Electrostatics and Special Power; Li, J.; Lu, N.; Wu, Y.; Li, D. [Dalian Univ. of Technology, Dalian (China). Inst. of Electrostatics and Special Power; Key Lab of Industrial Ecology and Environmental Engineering, Ministry of Education, Dalian (China)

    2010-07-01

    Advanced oxidation technologies such as photocatalysis, electrochemical degradation, Fenton oxidation, hydrogen peroxide oxidation, and plasma oxidation are increasingly being used to degrade refractory biodegradable organic contaminants. The plasma oxidation method has the advantage of direct in situ production of multiple types of high-reactive chemical species, including molecules and radicals that facilitate the degradation reaction. In addition, plasma oxidation does not produce any secondary pollution. Compared to other plasma technologies, the dielectric barrier discharge (DBD) plasma has been considered as a promising technology for removing toxic compounds because of its stability and its treatability property of biologically recalcitrant compounds in wastewater. However, the energy efficiency of DBD requires improvement for economic reasons. This paper reported on an experimental study that investigated the electrical characteristics of a parallel plate DBD reactor using a high frequency power supply for the removal of pentachlorophenol (PCP) adsorbed on activated carbon (AC). This study examined the effects of AC with different mass on discharge characteristics and compared the voltage and current waveforms, and discharge images of DBD reactors with different dielectric configurations. When the DBD reactor filled with AC, the applied voltage of discharge decreased regardless of the DBD reactor configuration in terms of having a single barrier or two barriers. The discharge characteristics had no significant change with AC mass increasing. The discharge images and current waveforms showed that DBD reactor configuration consisting of two dielectrics is more homogeneous and stable than the one consisting of a single dielectric. Under the same electric field condition, the degradation efficiency of PCP in two barriers reactor is higher than that in single barrier reactor. It was concluded that the findings from this study may be instrumental in treating

  16. Glycerol as high-permittivity liquid filler in dielectric silicone elastomers

    DEFF Research Database (Denmark)

    Mazurek, Piotr Stanislaw; Yu, Liyun; Skov, Anne Ladegaard

    of the composite. In combination with very low cost and easy preparation, the two property enhancements lead to a very attractive dielectric elastomer material. Experimental permittivity data are compared to various theoretical models that predict relative-permittivity changes as a function of filler loading...

  17. High temperature dielectric relaxation anomaly of Y3+ and Mn2+ doped barium strontium titanate ceramics

    International Nuclear Information System (INIS)

    Yan, Shiguang; Mao, Chaoliang; Wang, Genshui; Yao, Chunhua; Cao, Fei; Dong, Xianlin

    2014-01-01

    Relaxation like dielectric anomaly is observed in Y 3+ and Mn 2+ doped barium strontium titanate ceramics when the temperature is over 450 K. Apart from the conventional dielectric relaxation analysis method with Debye or modified Debye equations, which is hard to give exact temperature dependence of the relaxation process, dielectric response in the form of complex impedance, assisted with Cole-Cole impedance model corrected equivalent circuits, is adopted to solve this problem and chase the polarization mechanism in this paper. Through this method, an excellent description to temperature dependence of the dielectric relaxation anomaly and its dominated factors are achieved. Further analysis reveals that the exponential decay of the Cole distribution parameter n with temperature is confirmed to be induced by the microscopic lattice distortion due to ions doping and the interaction between the defects. At last, a clear sight to polarization mechanism containing both the intrinsic dipolar polarization and extrinsic distributed oxygen vacancies hopping response under different temperature is obtained.

  18. Oscillatory shear and high-pressure dielectric study of 5-methyl-3-heptanol

    DEFF Research Database (Denmark)

    Hecksher, Tina; Jakobsen, Bo; Dyre, J. C.

    2014-01-01

    The monohydroxy alcohol 5-methyl-3-heptanol is studied using rheology at ambient pressure and using dielectric spectroscopy at elevated pressures up to 1.03 GPa. Both experimental techniques reveal that the relaxational behavior of this liquid is intermediate between those that show a large Debye...

  19. Glycerol as high-permittivity liquid filler in dielectric silicone elastomers

    DEFF Research Database (Denmark)

    Mazurek, Piotr Stanislaw; Yu, Liyun; Gerhard, R.

    2016-01-01

    A recently reported novel class of elastomers was tested with respect to its dielectric properties. The new elastomer materialis based on a commercially available poly(dimethylsiloxane) composition, which has been modified by embedding glycerol droplets intoits matrix. The approach has two major ......, and the applicability ofthe models is discussed. VC 2016 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2016, 133, 44153....

  20. Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

    International Nuclear Information System (INIS)

    Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

    2012-01-01

    Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

  1. Studies of Plasma Instabilities Excited by Ground-Based High Power HF (Heating) Facilities and of X and Gamma Ray Emission in Runaway Breakdown Processes

    National Research Council Canada - National Science Library

    Gurevich, Aleksander V

    2006-01-01

    .... The runaway breakdown process in inhomogeneous thunderstorm electric field; 5. X-ray emission in different gases due to runaway breakdown phenomena in a laboratory cyclotron installation; 6. An influence of combined effects of runaway breakdown and cosmic rays on lightning processes in thunderstorm atmosphere.

  2. Highly sensitive analysis of boron and lithium in aqueous solution using dual-pulse laser-induced breakdown spectroscopy.

    Science.gov (United States)

    Lee, Dong-Hyoung; Han, Sol-Chan; Kim, Tae-Hyeong; Yun, Jong-Il

    2011-12-15

    We have applied a dual-pulse laser-induced breakdown spectroscopy (DP-LIBS) to sensitively detect concentrations of boron and lithium in aqueous solution. Sequential laser pulses from two separate Q-switched Nd:YAG lasers at 532 nm wavelength have been employed to generate laser-induced plasma on a water jet. For achieving sensitive elemental detection, the optimal timing between two laser pulses was investigated. The optimum time delay between two laser pulses for the B atomic emission lines was found to be less than 3 μs and approximately 10 μs for the Li atomic emission line. Under these optimized conditions, the detection limit was attained in the range of 0.8 ppm for boron and 0.8 ppb for lithium. In particular, the sensitivity for detecting boron by excitation of laminar liquid jet was found to be excellent by nearly 2 orders of magnitude compared with 80 ppm reported in the literature. These sensitivities of laser-induced breakdown spectroscopy are very practical for the online elemental analysis of boric acid and lithium hydroxide serving as neutron absorber and pH controller in the primary coolant water of pressurized water reactors, respectively.

  3. Effects of Interphase Modification and Biaxial Orientation on Dielectric Properties of Poly(ethylene terephthalate)/Poly(vinylidene fluoride-co-hexafluoropropylene) Multilayer Films.

    Science.gov (United States)

    Yin, Kezhen; Zhou, Zheng; Schuele, Donald E; Wolak, Mason; Zhu, Lei; Baer, Eric

    2016-06-01

    Recently, poly(vinylidene fluoride) (PVDF)-based multilayer films have demonstrated enhanced dielectric properties, combining high energy density and high dielectric breakdown strength from the component polymers. In this work, further enhanced dielectric properties were achieved through interface/interphase modulation and biaxial orientation for the poly(ethylene terephthalate)/poly(methyl methacrylate)/poly(vinylidene fluoride-co-hexafluoropropylene) [PET/PMMA/P(VDF-HFP)] three-component multilayer films. Because PMMA is miscible with P(VDF-HFP) and compatible with PET, the interfacial adhesion between PET and P(VDF-HFP) layers should be improved. Biaxial stretching of the as-extruded multilayer films induced formation of highly oriented fibrillar crystals in both P(VDF-HFP) and PET, resulting in improved dielectric properties with respect to the unstretched films. First, the parallel orientation of PVDF crystals reduced the dielectric loss from the αc relaxation in α crystals. Second, biaxial stretching constrained the amorphous phase in P(VDF-HFP) and thus the migrational loss from impurity ions was reduced. Third, biaxial stretching induced a significant amount of rigid amorphous phase in PET, further enhancing the breakdown strength of multilayer films. Due to the synergistic effects of improved interfacial adhesion and biaxial orientation, the PET/PMMA/P(VDF-HFP) 65-layer films with 8 vol % PMMA exhibited optimal dielectric properties with an energy density of 17.4 J/cm(3) at breakdown and the lowest dielectric loss. These three-component multilayer films are promising for future high-energy-density film capacitor applications.

  4. Influence of calcination temperature on sol-gel synthesized single-phase bismuth titanate for high dielectric capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Thiruramanathan, Pandirengan; Marikani, Arumugam [Mepco Schlenk Engineering College, Tamil Nadu (India). Dept. of Physics; Madhavan, Durairaj [Mepco Schlenk Engineering College, Tamil Nadu (India). Dept. of Chemistry; Bharadwaj, Suresh; Awasthi, Anand Mohan [UGC-DAE Consortium for Scientific Research, Indore (India). Thermodynamics Lab.

    2016-05-15

    An inexpensive sol-gel combustion method using citric acid as fuel has been used to synthesize bismuth titanate, Bi{sub 4}Ti{sub 3}O{sub 12} nanopowders. Thermogravimetric analysis proved that a calcination temperature of 900 C is sufficient for the preparation of single-phase bismuth titanate. X-ray diffraction and Fourier transform infrared spectroscopy are used to examine the influence of calcination temperature on the structural growth of the Bi{sub 4}Ti{sub 3}O{sub 12} nanopowder. The average crystallite size estimated by using the Scherrer method and the Williamson-Hall method was found to increase with calcination temperature. Photoluminescence behavior as a function of calcination temperature was observed at two different excitation wavelengths of 300 nm and 420 nm. The morphology of the particles analyzed using images obtained from field emission scanning electron microscopy displayed irregular, random sized, and spherical-shaped structures. The stoichiometry and purity of the nanopowder are confirmed by energy-dispersive spectroscopy. The broadband dielectric results established the highest dielectric constant (ε{sub r} = 450) for a frequency of 100 Hz achieved with a potential capacitance of 138 pF m{sup -2}. This establishes Bi{sub 4}Ti{sub 3}O{sub 12} as a promising dielectric material for achieving high energy density capacitors for the next-generation passive devices.

  5. Potential applications of high-frequency dielectric heating in mechanical forest industry in Finland. Suurtaajuuskuivauksen kaeyttoemahdollisuudet mekaanisessa metsaeteollisuudessa

    Energy Technology Data Exchange (ETDEWEB)

    Siimes, H.; Tarvainen, V.; Peraeniitty, M.

    1986-10-01

    The present study of potential applications of dielectric technology in wood drying was made by using availaable literature and contacting experts and equipment manufacturers. The report gives an account of drying results and equipment applications. It also includes an overview of the principles of high-frequency drying, the equipment required for high-frequency energy production and the dielectric properties of wood. In conclusion, the economy of high-frequency drying and factors which influence it are evaluated and the most economic applications are defined. In high-frequency drying, wood warms up the most in interior sections with a high moisture content. The risk for overdrying of the surface is thus small, and the wood dries much faster than in convective drying. To be economic, the high capital and energy costs of high-frequency drying should be compensated by fewer drying defects, a higher yield in the final use of the wood, higher storehouse throughput, speedier deliveries and lower total energy consumption. Other characteristic features of economic high-frequency drying are that only a small amount of moisture is removed and the wood is thick, difficult to dry and expensive. High-frequency applications which merit further study in Finland are drying of thick joinery-quality sawn goods and redrying of veneers and chips.

  6. A Model for the Onset of Vortex Breakdown

    Science.gov (United States)

    Mahesh, K.

    1996-01-01

    A large body of information exists on the breakdown of incompressible streamwise vortices. Less is known about vortex breakdown at high speeds. An interesting example of supersonic vortex breakdown is the breakdown induced by the interaction of vortices with shock waves. The flow in supersonic engine inlets and over high-speed delta wings constitute technologically important examples of this phenomenon, which is termed 'shock-induced vortex breakdown'. In this report, we propose a model to predict the onset of shock-induced vortex breakdown. The proposed model has no adjustable constants, and is compared to both experiment and computation. The model is then extended to consider two other problems: the breakdown of a free compressible vortex, and free incompressible vortex breakdown. The same breakdown criterion is used in all three problems to predict the onset of breakdown. Finally, a new breakdown map is proposed that allows the simultaneous comparison of data from flows ranging from incompressible breakdown to breakdown induced by a shock wave.

  7. Dielectric properties of polyhedral oligomeric silsesquioxane (POSS)-based nanocomposites at 77k

    International Nuclear Information System (INIS)

    Pan, Ming-Jen; Gorzkowski, Edward; McAllister, Kelly

    2011-01-01

    The goal of this study is to develop dielectric nanocomposites for high energy density applications at liquid nitrogen temperature by utilizing a unique nano-material polyhedral oligomeric silsesquioxanes (POSS). A POSS molecule is consisted of a silica cage core with 8 silicon and 12 oxygen atoms and organic functional groups attached to the corners of the cage. In this study, we utilize POSS for the fabrication of nanocomposites both as a silica nanoparticle filler to enhance the breakdown strength and as a surfactant for effective dispersion of high permittivity ceramic nanoparticles in a polymer matrix. The matrix materials selected for the study are polyvinylidene fluoride (PVDF) and poly(methyl methacrylate) (PMMA). The ceramic nanoparticles are barium strontium titanate (BST 50/50) and strontium titanate. The dielectric properties of the solution-cast nanocomposites films were correlated to the composition and processing conditions. We determined that the addition of POSS did not provide enhanced dielectric performance in PVDF- and PMMA-based materials at either room temperature or 77K. In addition, we found that the dielectric breakdown strength of PMMA is lower at 77K than at room temperature, contradicting literature data.

  8. Investigations of dc breakdown fields

    CERN Document Server

    Ramsvik, Trond; Reginelli, Alessandra; Taborelli, Mauro

    2006-01-01

    The need for high accelerating gradients for the future 30 GHz multi-TeV e+e- Compact Linear Collider (CLIC) at CERN has triggered a comprehensive study of DC breakdown fields of metals in UHV. The study shows that molybdenum (Mo), tungsten (W), titanium (Ti) and TiVAl reach high breakdown fields, and are thus good candidates for the iris material of CLIC structures. A significant decrease in the saturated breakdown field (Esat) is observed for molybdenum and tungsten when exposed to air. Specifically, at air pressures of 10-5 mbar, the decrease in Esat is found to be 50% and 30% for molybdenum and tungsten, respectively. In addition, a 30% decrease is found when molybdenum is conditioned with a CO pressure of ~1-10-5 mbar. Surface analysis measurements and breakdown conditioning in O2 ambience imply that the origin of the decrease in Esat is closely linked to oxide formation on the cathode surface. "Ex-situ" treatments by ion bombardment of molybdenum effectively reduce the oxide layers, and improve the brea...

  9. High voltage switches having one or more floating conductor layers

    Science.gov (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  10. Breakdown properties of irradiated MOS capacitors

    International Nuclear Information System (INIS)

    Paccagnella, A.; Candelori, A.; Pellizzer, F.; Fuochi, P.G.; Lavale, M.

    1996-01-01

    The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co 60 gamma and 10 14 neutrons/cm 2 only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested

  11. Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

    International Nuclear Information System (INIS)

    Wang, Yaqi; Alur, Siddharth; Sharma, Yogesh; Tong, Fei; Thapa, Resham; Gartland, Patrick; Issacs-Smith, Tamara; Ahyi, Claude; Williams, John; Park, Minseo; Johnson, Mark; Paskova, Tanya; Preble, Edward A; Evans, Keith R

    2011-01-01

    Vertical Schottky diodes were fabricated on the bulk GaN substrate with decreasing impurity concentration from N-face to Ga-face. An array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively. The Schottky diode exhibits a minimum specific on-state resistance of 1.3 mΩ cm 2 and a maximum breakdown voltage of 600 V, resulting in a figure-of- merit of 275 MW cm −2 . An ultra-low reverse leakage current density of 3.7 × 10 −4 A cm −2 at reverse bias of 400 V was observed. Temperature-dependent I–V measurements were also carried out to study the forward and reverse transportation mechanisms. (fast track communication)

  12. Methods of making a high dielectric constant, resistive phase of YBa2Cu3OX and methods of using the same

    International Nuclear Information System (INIS)

    Testardi, L.R.

    1991-01-01

    This patent describes an electrical device. It comprises a dielectric material configured so as to have a pair of opposite sides, the dielectric material comprising a high dielectric constant, high electrical resistivity material phase of yttrium barium copper oxide obtained by heating the yttrium barium copper oxide to at least about 850 degrees Celsius and then quenching the yttrium barium copper oxide from the at least about 850 degrees Celsius at a sufficiently rapid rate so as to produce the high dielectric constant, high electrical resistivity material phase in the yttrium barium copper oxide; a first plate means for storing electrical charge provided on a first one of the pair of opposite sides of the dielectric material; a second plate means for storing electrical charge provided on a second one of the pair of opposite sides of the dielectric material; a first lead means adjacent to and in electrical contact with the first plate means for permitting electrical contact to the first plate means; and a second lead means adjacent to and in electrical contact with the second plate means for permitting electrical contact to the second plate means; wherein the electrical device is a capacitor having a useful, desired capacitance and is adapted to be used in diverse electrical and electronic applications for the storage of electrical charge

  13. High temperature breakdown of the Stokes-Einstein relation in a computer simulated Cu-Zr melt

    Energy Technology Data Exchange (ETDEWEB)

    Han, X. J., E-mail: xjhan@sjtu.edu.cn; Li, J. G., E-mail: lijg@sjtu.edu.cn [School of Materials Science and Engineering, Shanghai Jiao Tong University, Dongchuan Rd. 800, 200240 Shanghai (China); Schober, H. R., E-mail: h.schober@fz-juelich.de [Peter Grünberg Institut, Forschungszentrum Jülich, D-52425 Jülich (Germany)

    2016-03-28

    Transport properties and the Stokes-Einstein (SE) relation in liquid Cu{sub 8}Zr{sub 3} are studied by molecular dynamics simulation with a modified embedded atom potential. The critical temperature T{sub c} of mode coupling theory (MCT) is derived as 930 K from the self-diffusion coefficient D and viscosity η. The SE relation breaks down around T{sub SE} = 1900 K, which is far above T{sub c}. At temperatures below T{sub SE}, the product of D and η fluctuates around a constant value, similar to the prediction of MCT near T{sub c}. The influence of the microscopic atomic motion on macroscopic properties is investigated by analyzing the time dependent liquid structure and the self-hole filling process. The self-holes for the two components are preferentially filled by atoms of the same component. The self-hole filling dynamics explains the different breakdown behaviors of the SE relation in Zr-rich liquid CuZr{sub 2} compared to Cu-rich Cu{sub 8}Zr{sub 3}. At T{sub SE}, a kink is found in the temperature dependence of both partial and total coordination numbers for the three atomic pair combinations and of the typical time of self-hole filling. This indicates a strong correlation between liquid structure, atomic dynamics, and the breakdown of SE relation. The previously suggested usefulness of the parameter d(D{sub 1}/D{sub 2})/dT to predict T{sub SE} is confirmed. Additionally we propose a viscosity criterion to predict T{sub SE} in the absence of diffusion data.

  14. Fast Breakdown as Coronal/Ionization Waves?

    Science.gov (United States)

    Krehbiel, P. R.; Petersen, D.; da Silva, C. L.

    2017-12-01

    Studies of high-power narrow bipolar events (NBEs) have shown they are produced by a newly-recognized breakdown process called fast positive breakdown (FPB, Rison et al., 2016, doi:10.1038/ncomms10721). The breakdown was inferred to be produced by a system of positive streamers that propagate at high speed ( ˜3-6 x 107 m/s) due to occurring in a localized region of strong electric field. The polarity of the breakdown was determined from broadband interferometer (INTF) observations of the propagation direction of its VHF radiation, which was downward into the main negative charge region of a normally-electrified storm. Subsequent INTF observations being conducted in at Kennedy Space Center in Florida have shown a much greater incidence of NBEs than in New Mexico. Among the larger dataset have been clear-cut instances of some NBEs being produced by upward breakdown that would be of negative polarity. The speed and behavior of the negative breakdown is the same as that of the fast positive, leading to it being termed fast negative breakdown (FNB). The similarity (not too mention its occurrence) is surprising, given the fact that negative streamers and breakdown develops much differently than that of positive breakdown. The question is how this happens. In this study, we compare fast breakdown characteristics to well-known streamer properties as inferred from laboratory experiments and theoretical analysis. Additionally, we begin to explore the possibility that both polarities of fast breakdown are produced by what may be called coronal or ionization waves, in which the enhanced electric field produced by streamer or coronal breakdown of either polarity propagates away from the advancing front at the speed of light into a medium that is in a metastable condition of being at the threshold of hydrometeor-mediated corona onset or other ionization processes. The wave would develop at a faster speed than the streamer breakdown that gives rise to it, and thus would be

  15. Comparative Study of Breakdown Voltage of Mineral, Synthetic and Natural Oils and Based Mineral Oil Mixtures under AC and DC Voltages

    Directory of Open Access Journals (Sweden)

    Abderrahmane Beroual

    2017-04-01

    Full Text Available This paper deals with a comparative study of AC and DC breakdown voltages of based mineral oil mixtures with natural and synthetic esters mainly used in high voltage power transformers. The goal was to analyze the performances of oil mixtures from the dielectric withstand point of view and to predict the behavior of transformers originally filled with mineral oil and re-filled with synthetic or natural ester oils when emptied for maintenance. The study concerns mixtures based on 20%, 50%, and 80% of natural and synthetic ester oils. AC breakdown voltages were measured using a sphere-sphere electrode system according to IEC 60156 specifications; the same specification was adopted for DC measurements since there is no standard specifications for this voltage waveform. A statistical analysis of the mean values, standard deviations, and histograms of breakdown voltage data was carried out. The Normal and Weibull distribution functions were used to analyze the experimental data and the best function that the data followed was used to estimate the breakdown voltage with risk of 1%, 10%, and 50% probability. It was shown that whatever the applied voltage waveforms, ester oils always have a significantly higher breakdown voltage than mineral oil. The addition of only 20% of natural or synthetic ester oil was sufficient to considerably increase the breakdown voltage of mineral oil. The dielectric strength of such a mixture is much higher than that of mineral oil alone and can reach that of ester oils. From the point of view of dielectric strength, the mixtures constitute an option for improving the performance of mineral oil. Thus, re-filling of transformers containing up to 20% mineral oil residues with ester oils, does not present any problem; it is even advantageous when considering only the breakdown voltage. Under AC, the mixtures with natural ester always follow the behavior of vegetable oil alone. With the exception of the 20% mixture of natural

  16. Dielectric recovery mechanism of pressurized carbon dioxide at liquid and supercritical phases

    Science.gov (United States)

    Tanoue, Hiroyuki; Furusato, Tomohiro; Imamichi, Takahiro; Ota, Miyuki; Katsuki, Sunao; Akiyama, Hidenori

    2015-09-01

    Estimates of dielectric recovery rates of supercritical (SC) and liquid carbon dioxide (CO2) were derived with focus on highly-repetitive pulsed power switching mediums. Calculated results suggest that recovery time of SC and liquid CO2 are approximately 50 times shorter than that of water and oils. Prior to 10 µs after breakdown, recovery rates in neither SC nor liquid CO2 reached 100%, though the recovery rate in SC CO2 was higher than that of liquid CO2. To examine causes of recovery rate differences, each dielectric recovery process in SC and liquid CO2 was observed by laser shadowgraph technique. These shadowgraph images suggest two factors explaining dielectric recovery rate differences between these medium conditions: 1) thermodynamic property differences between medium conditions, and 2) differences in the low density region recovery mechanism.

  17. Novel high dielectric constant hybrid elastomers based on glycerol-insilicone emulsions

    DEFF Research Database (Denmark)

    Mazurek, Piotr Stanislaw; Skov, Anne Ladegaard

    2016-01-01

    Novel hybrid elastomers were prepared by speedmixing of two virtually immiscible liquids – glycerol and polydimethylsiloxane (PDMS) prepolymer. Upon crosslinking ofthe PDMS phase of the resulting glycerol-in-silicone emulsion freestanding films were obtained. In this way glycerol became uniformly...... elastomeractuators. Conductivities of samples based on various PDMS compositions with different loadings of embedded glycerol were thoroughly investigated providing useful information about the dielectric behavior....

  18. Characteristic features of the magnetoresistance in the ferrimagnetic (Sr2FeMoO6-δ) - dielectric (SrMoO4) nanocomposite

    Science.gov (United States)

    Demyanov, S.; Kalanda, N.; Yarmolich, M.; Petrov, A.; Lee, S.-H.; Yu, S.-C.; Oh, S. K.; Kim, D.-H.

    2018-05-01

    Magnetic metal-oxide compounds with high values of magnetoresistance (MR) have attracted huge interest for spintronic applications, among which Sr2FeMoO6-δ (SFMO) has been relatively less known compared to the cobaltites and manganites, despite 100% electrons spin-polarization degree and a high Curie temperature. Here, stable fabrication and systematic analysis of nanocomposites based on SFMO with SrMoO4 dielectric sheaths are presented. SFMO-SrMoO4 nanocomposites were fabricated as follows: synthesis of the SFMO single-phase nanopowders by the modified citrate-gel technique; compaction under high pressure; thermal treatment for sheaths formation around grains. The nanocomposite is observed to exhibit a transitional behavior of conductivity from metallic, which is characteristic for the SFMO to semiconductor one in the temperature range 4 - 300K under magnetic fields up to 10T. A negative MR is observed due to the spin-polarized charge carriers tunneling through dielectric sheaths. MR value reaches 43% under 8T at 10κ. The dielectric sheaths thickness was determined to be about 10 nm by electric breakdown voltage value at current-voltage characteristics curves. The breakdown is found to be a reversible process determined by collisional ionization of dielectric atoms in strong electric field depending on knocked-out electrons from the SrMoO4. It was found that MR changes sign in electric breakdown region, revealing the giant magnetoresistive properties.

  19. High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

    International Nuclear Information System (INIS)

    Xia, D X; Xu, J B

    2010-01-01

    Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm 2 V -1 s -1 and 2.1 cm 2 V -1 s -1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics. (fast track communication)

  20. THE STUDY OF HIGH DIELECTRIC CONSTANT MECHANISM OF La-DOPED Ba0.67Sr0.33TiO3 CERAMICS

    Science.gov (United States)

    Xu, Jing; He, Bo; Liu, Han Xing

    It is a common and effective method to enhance the dielectric properties of BST ceramics by adding rare-earth elements. In this paper, it is important to analyze the cause of the high dielectric constant behavior of La-doped BST ceramics. The results show that proper rare earth La dopant (0.2≤x≤0.7) may greatly increase the dielectric constant of BST ceramics, and also improve the temperature stability, evidently. According to the current-voltage (J-V) characteristics, the proper La-doped BST ceramics may reach the better semiconductivity, with the decrease and increase in La doping, the ceramics are insulators. By using the Schottky barrier model and electric microstructure model to find the surface or grain boundary potential barrier height, the width of the depletion layer and grain size do play an important role in impacting the dielectric constant.

  1. Tungsten trioxide as high-{kappa} gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Michael; Wenckstern, Holger von; Grundmann, Marius [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

    2012-07-01

    We demonstrate metal-insulator-semiconductor field-effect transistors with high-{kappa}, room-temperature deposited, highly transparent tungsten trioxide (WO{sub 3}) as gate dielectric. The channel material consists of a zinc oxide (ZnO) thin-film. The transmittance and resistivity of WO{sub 3} films was tuned in order to obtain a highly transparent and insulating WO{sub 3} dielectric. The devices were processed by standard photolithography using lift-off technique. On top of the WO{sub 3} dielectric a highly transparent and conductive oxide consisting of ZnO: Al 3% wt. was deposited. The gate structure of the devices exhibits an average transmittance in the visible spectral range of 86%. The on/off-current ratio is larger than 10{sup 8} with off- and gate leakage-currents below 3 x 10{sup -8} A/cm{sup 2}. Due to the high relative permittivity of {epsilon}{sub r} {approx} 70, a gate voltage sweep of only 2 V is necessary to turn the transistor on and off with a minimum subthreshold swing of 80 mV/decade. The channel mobility of the transistors equals the Hall-effect mobility with a value of 5 cm{sup 2}/Vs. It is furthermore shown, that the devices are stable up to operating temperatures of at least 150 C.

  2. Compliance of the Stokes-Einstein model and breakdown of the Stokes-Einstein-Debye model for a urea-based supramolecular polymer of high viscosity.

    Science.gov (United States)

    Świergiel, Jolanta; Bouteiller, Laurent; Jadżyn, Jan

    2014-11-14

    Impedance spectroscopy was used for the study of the static and dynamic behavior of the electrical conductivity of a hydrogen-bonded supramolecular polymer of high viscosity. The experimental data are discussed in the frame of the Stokes-Einstein and Stokes-Einstein-Debye models. It was found that the translational movement of the ions is due to normal Brownian diffusion, which was revealed by a fulfillment of Ohm's law by the electric current and a strictly exponential decay of the current after removing the electric stimulus. The dependence of the dc conductivity on the viscosity of the medium fulfills the Stokes-Einstein model quite well. An extension of the model, by including in it the conductivity relaxation time, is proposed in this paper. A breakdown of the Stokes-Einstein-Debye model is revealed by the relations of the dipolar relaxation time to the viscosity and to the dc ionic conductivity. The importance of the C=O···H-N hydrogen bonds in that breakdown is discussed.

  3. Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

    Directory of Open Access Journals (Sweden)

    Yaorong Su

    2015-11-01

    Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

  4. Actuation response of polyacrylate dielectric elastomers

    DEFF Research Database (Denmark)

    Kofod, G.; Kornbluh, R.; Pelrine, R.

    2001-01-01

    Polyacrylate dielectric elastomers have yielded extremely large strain and elastic energy density suggesting that they are useful for many actuator applications. A thorough understanding of the physics underlying the mechanism of the observed response to an electric field can help develop improved......, though there are discrepancies. Further analysis suggests that these arise mostly from imperfect manufacture of the actuators, though there is a small contribution from an explicitly electrostrictive behavior of the acrylic adhesive. Measurements of the dielectric constant of stretched polymer reveal...... that the dielectric constant drops, when the polymer is strained, indicating the existence of a small electrostrictive effect. Finally, measurements of the electric breakdown field were made. These also show a dependence upon the strain. In the unstrained state the breakdown field is 20 WV/m, which grows to 218MV...

  5. A Study of Dip-Coatable, High-Capacitance Ion Gel Dielectrics for 3D EWOD Device Fabrication

    Directory of Open Access Journals (Sweden)

    Carlos E. Clement

    2017-01-01

    Full Text Available We present a dip-coatable, high-capacitance ion gel dielectric for scalable fabrication of three-dimensional (3D electrowetting-on-dielectric (EWOD devices such as an n × n liquid prism array. Due to the formation of a nanometer-thick electric double layer (EDL capacitor, an ion gel dielectric offers two to three orders higher specific capacitance (c ≈ 10 μF/cm2 than that of conventional dielectrics such as SiO2. However, the previous spin-coating method used for gel layer deposition poses several issues for 3D EWOD device fabrication, particularly when assembling multiple modules. Not only does the spin-coating process require multiple repetitions per module, but the ion gel layer also comes in risks of damage or contamination due to handling errors caused during assembly. In addition, it was observed that the chemical formulation previously used for the spin-coating method causes the surface defects on the dip-coated gel layers and thus leads to poor EWOD performance. In this paper, we alternatively propose a dip-coating method with modified gel solutions to obtain defect-free, functional ion gel layers without the issues arising from the spin-coating method for 3D device fabrication. A dip-coating approach offers a single-step coating solution with the benefits of simplicity, scalability, and high throughput for deposition of high-capacitance gel layers on non-planar EWOD devices. An ion gel solution was prepared by combining the [EMIM][TFSI] ionic liquid and the [P(VDF-HFP] copolymer at various wt % ratios in acetone solvent. Experimental studies were conducted to fully understand the effects of chemical composition ratios in the gel solution and how varying thicknesses of ion gel and Teflon layers affects EWOD performance. The effectiveness and potentiality of dip-coatable gel layers for 3D EWOD devices have been demonstrated through fabricating 5 × 1 arrayed liquid prisms using a single-step dip-coating method. Each prism module has

  6. Direct spectral analysis and determination of high content of carcinogenic bromine in bread using UV pulsed laser induced breakdown spectroscopy.

    Science.gov (United States)

    Mehder, A O; Gondal, Mohammed A; Dastageer, Mohamed A; Habibullah, Yusuf B; Iqbal, Mohammed A; Oloore, Luqman E; Gondal, Bilal

    2016-01-01

    Laser induced breakdown spectroscopy (LIBS) was applied for the detection of carcinogenic elements like bromine in four representative brands of loaf bread samples and the measured bromine concentrations were 352, 157, 451, and 311 ppm, using Br I (827.2 nm) atomic transition line as the finger print atomic transition. Our LIBS system is equipped with a pulsed laser of wavelength 266 nm with energy 25 mJ pulse(-1), 8 ns pulse duration, 20 Hz repetition rate, and a gated ICCD camera. The LIBS system was calibrated with the standards of known concentrations in the sample (bread) matrix and such plot is linear in 20-500 ppm range. The capability of our system in terms of limit of detection and relative accuracy with respect to the standard inductively coupled plasma mass spectrometry (ICPMS) technique was evaluated and these values were 5.09 ppm and 0.01-0.05, respectively, which ensures the applicability of our system for Br trace level detection, and LIBS results are in excellent agreement with that of ICPMS results.

  7. Laser-Induced Breakdown Spectroscopy to high-resolution analysis of ion distribution in cement-bound solid; Laser-induzierte Breakdown Spektroskopie (LIBS) zur hochaufloesenden Analyse der Ionenverteilung in zementgebundenen Feststoffen

    Energy Technology Data Exchange (ETDEWEB)

    Molkenthin, Andre

    2009-06-03

    The Laser-Induced Breakdown Spectroscopy allows imaging and quantitative analysis of the ion distribution of all relevant elements on the surface of mineral building materials. The measuring system has been characterised by investigations on specimens of hardened cement paste, mortar and concrete. Transport and accumulation processes are visualised. Besides, results are introduced for the peripheral zone close to the surface and the extraction is shown. (orig.) [German] Die Laser-induzierte Breakdown Spektroskopie ermoeglicht eine bildgebende und quantitative Analyse der Ionenverteilung aller massgeblichen Elemente auf mineralischen Baustoffoberflaechen. Das Messsystem wurde durch verfahrenspezifische Untersuchungen an Proben aus Zementstein, -moerteln und Betonen charakterisiert, Transport- und Anlagerungsprozesse wurden visuell dargestellt. Zudem werden Ergebnisse fuer den Ionenhaushalt in der ungestoerten oberflaechenahen Randzone sowie bei deren Auslaugung bzw. Anreicherung vorgestellt.

  8. Product Work Breakdown Structure

    National Research Council Canada - National Science Library

    Okayama, Y; Chirillo, L. D

    1980-01-01

    .... Any such subdivision scheme is a work breakdown structure. Traditional shipbuilders employ work subdivisions by ships functional systems which are natural and appropriate for estimating and for early design stages...

  9. Nonlinear Dielectric Response of Water Treed XLPE Cable Insulation

    Energy Technology Data Exchange (ETDEWEB)

    Hvidsten, Sverre

    1999-07-01

    Condition assessment of XLPE power cables is becoming increasingly important for the utilities, due to a large number of old cables in service with high probability of failure caused by water tree degradation. The commercial available techniques are generally based upon measurements of the dielectric response, either by time (polarisation/depolarisation current or return voltage) or frequency domain measurements. Recently it has been found that a high number of water trees in XLPE insulated cables causes the dielectric response to increase more than linearly with increasing test voltage. This nonlinear feature of water tree degraded XLPE insulation has been suggested to be of a great importance, both for diagnostic purposes, and for fundamental understanding of the water tree phenomenon itself. The main purpose of this thesis have been to study the nonlinear feature of the dielectric response measured on watertreed XLPE insulation. This has been performed by dielectric response measurements in both time and frequency domain, numerical calculations of losses of simplified water tree models, and fmally water content and water permeation measurements on single water trees. The dielectric response measurements were performed on service aged cable samples and laboratory aged Rogowski type objects. The main reason for performing laboratory ageing was to facilitate diagnostic testing as a function of ageing time of samples containing mainly vented water trees. A new method, based upon inserting NaC1 particles at the interface between the upper semiconductive screen and the insulation, was found to successfully enhance initiation and growth of vented water trees. AC breakdown strength testing show that it is the vented water trees that reduce the breakdown level of both the laboratory aged test objects and service aged cable samples. Vented water treeing was found to cause the dielectric response to become nonlinear at a relatively low voltage level. However, the measured

  10. Dielectric properties of C sub 6 sub 0 under high pressure

    CERN Document Server

    Sundqvist, B

    2002-01-01

    The dielectric properties of C sub 6 sub 0 have been measured as functions of temperature and hydrostatic pressure in the ranges 80-370 K and 0-0.8 GPa. The results show sharp anomalies at the rotational transition above 260 K and large relaxation peaks associated with the rotational 'glass transition'. From the measured frequencies of the loss peaks we calculate the energy barrier for molecular jumping between the 'pentagon' and 'hexagon' molecular orientations. The energy barrier increases by 13% GPa sup - sup 1.

  11. Electrical breakdown in vacuum

    International Nuclear Information System (INIS)

    Beukema, G.P.

    1980-01-01

    The main part of this thesis is dedicated to the field enhancement factor; in particular to the study of the origin, alteration and influence on the breakdown properties of different materials. This work required the examination of large surface areas on the same microscopic scale on which the relevant phenomena occur. (Pre)-breakdown measurements are described in which the anode condition does not play a role in the initiation of a breakdown, while the cathode can be considered as a broad-area electrode. The influence of adsorbed gases on pre-breakdown currents is investigated. It is shown that ions, released by field emission electrons from adsorbed layers on the anode change the emitting properties of a well-conditioned cathode if the current density at the anode is small. A new experimental arrangement is outlined to better distinguish between the different parameters which are important for the initiation of electrical breakdown. Comparative measurements between stainless steel and titanium electrodes are described to study the influence of either the cathode or the anode upon the initiation of a breakdown. (Auth.)

  12. Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage.

    Science.gov (United States)

    Han, Fangming; Meng, Guowen; Zhou, Fei; Song, Li; Li, Xinhua; Hu, Xiaoye; Zhu, Xiaoguang; Wu, Bing; Wei, Bingqing

    2015-10-01

    Dielectric capacitors are promising candidates for high-performance energy storage systems due to their high power density and increasing energy density. However, the traditional approach strategies to enhance the performance of dielectric capacitors cannot simultaneously achieve large capacitance and high breakdown voltage. We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode design. First, we fabricate a unique nanoporous anodic aluminum oxide (AAO) membrane with two sets of interdigitated and isolated straight nanopores opening toward opposite planar surfaces. By depositing carbon nanotubes in both sets of pores inside the AAO membrane, the new dielectric capacitor with 3D nanoscale interdigital electrodes is simply realized. In our new capacitors, the large specific surface area of AAO can provide large capacitance, whereas uniform pore walls and hemispheric barrier layers can enhance breakdown voltage. As a result, a high energy density of 2 Wh/kg, which is close to the value of a supercapacitor, can be achieved, showing promising potential in high-density electrical energy storage for various applications.

  13. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

    2015-08-24

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

  14. Reduction of space charge breakdown in e-beam irradiated nano/polymethyl methacrylate composites

    International Nuclear Information System (INIS)

    Zheng Feihu; Zhang Yewen; An Zhenlian; Dong Jianxing; Lei Qingquan

    2013-01-01

    Fast discharge of numerous space charges in dielectric materials can cause space charge breakdown. This letter reports the role of nanoparticles in affecting space charge breakdown of nano/polymethyl methacrylate composites. Space charge distributions in the composites, implanted by electron beam irradiation, were measured by pressure wave propagation method. The results show that the nanoparticles have significant effects on the isothermal charge decay and space charge breakdown in the nanocomposites. The resistance to space charge breakdown in the nanocomposites is attributed to the combined action of the introduction of deep trapping states and the scattering effect by the added nanoparticles.

  15. Nanostructure multilayer dielectric materials for capacitors and insulators

    Science.gov (United States)

    Barbee, Jr., Troy W.; Johnson, Gary W.

    1998-04-21

    A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.

  16. Dielectric nanoresonators for light manipulation

    Science.gov (United States)

    Yang, Zhong-Jian; Jiang, Ruibin; Zhuo, Xiaolu; Xie, Ya-Ming; Wang, Jianfang; Lin, Hai-Qing

    2017-07-01

    Nanostructures made of dielectric materials with high or moderate refractive indexes can support strong electric and magnetic resonances in the optical region. They can therefore function as nanoresonators. In addition to plasmonic metal nanostructures that have been widely investigated, dielectric nanoresonators provide a new type of building blocks for realizing powerful and versatile nanoscale light manipulation. In contrast to plasmonic metal nanostructures, nanoresonators made of appropriate dielectric materials are low-cost, earth-abundant and have very small or even negligible light energy losses. As a result, they will find potential applications in a number of photonic devices, especially those that require low energy losses. In this review, we describe the recent progress on the experimental and theoretical studies of dielectric nanoresonators. We start from the basic theory of the electromagnetic responses of dielectric nanoresonators and their fabrication methods. The optical properties of individual dielectric nanoresonators are then elaborated, followed by the coupling behaviors between dielectric nanoresonators, between dielectric nanoresonators and substrates, and between dielectric nanoresonators and plasmonic metal nanostructures. The applications of dielectric nanoresonators are further described. Finally, the challenges and opportunities in this field are discussed.

  17. Breakdown characteristics of xenon HID Lamps

    Science.gov (United States)

    Babaeva, Natalia; Sato, Ayumu; Brates, Nanu; Noro, Koji; Kushner, Mark

    2009-10-01

    The breakdown characteristics of mercury free xenon high intensity discharge (HID) lamps exhibit a large statistical time lag often having a large scatter in breakdown voltages. In this paper, we report on results from a computational investigation of the processes which determine the ignition voltages for positive and negative pulses in commercial HID lamps having fill pressures of up to 20 atm. Steep voltage rise results in higher avalanche electron densities and earlier breakdown times. Circuit characteristics also play a role. Large ballast resistors may limit current to the degree that breakdown is quenched. The breakdown voltage critically depends on cathode charge injection by electric field emission (or other mechanisms) which in large part controls the statistical time lag for breakdown. For symmetric lamps, ionization waves (IWs) simultaneously develop from the bottom and top electrodes. Breakdown typically occurs when the top and bottom IWs converge. Condensed salt layers having small conductivities on the inner walls of HID lamps and on the electrodes can influence the ignition behavior. With these layers, IWs tend to propagate along the inner wall and exhibit a different structure depending on the polarity.

  18. SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2010-03-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

  19. Laser-powered dielectric-structures for the production of high-brightness electron and x-ray beams

    Science.gov (United States)

    Travish, Gil; Yoder, Rodney B.

    2011-05-01

    Laser powered accelerators have been under intensive study for the past decade due to their promise of high gradients and leveraging of rapid technological progress in photonics. Of the various acceleration schemes under examination, those based on dielectric structures may enable the production of relativistic electron beams in breadbox sized systems. When combined with undulators having optical-wavelength periods, these systems could produce high brilliance x-rays which find application in, for instance, medical and industrial imaging. These beams also may open the way for table-top atto-second sciences. Development and testing of these dielectric structures faces a number of challenges including complex beam dynamics, new demands on lasers and optical coupling, beam injection schemes, and fabrication. We describe one approach being pursued at UCLA-the Micro Accelerator Platform (MAP). A structure similar to the MAP has also been designed which produces periodic deflections and acts as an undulator for radiation production, and the prospects for this device will be considered. The lessons learned from the multi-year effort to realize these devices will be presented. Challenges remain with acceleration of sub-relativistic beams, focusing, beam phase stability and extension of these devices to higher beam energies. Our progress in addressing these hurdles will be summarized. Finally, the demands on laser technology and optical coupling will be detailed.

  20. Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    International Nuclear Information System (INIS)

    Li Yongliang; Xu Qiuxia

    2010-01-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 0 C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. (semiconductor technology)

  1. Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

    International Nuclear Information System (INIS)

    Sielski, Jan; Jeszka, Jeremiasz K.

    2012-01-01

    The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge-carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time-of-flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 x 10 5 V cm -1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of ''high-energy'' charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Marneffe, J.-F. de, E-mail: marneffe@imec.be; Lukaszewicz, M.; Porter, S. B.; Vajda, F.; Rutigliani, V.; Verdonck, P.; Baklanov, M. R. [IMEC v.z.w., 3001 Leuven (Belgium); Zhang, L.; Heyne, M.; El Otell, Z.; Krishtab, M. [IMEC v.z.w., 3001 Leuven (Belgium); Department of Chemistry, KULeuven, 3001 Leuven (Belgium); Goodyear, A.; Cooke, M. [Oxford Instruments Plasma Technology, BS49 4AP Bristol (United Kingdom)

    2015-10-07

    Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition, the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge.

  3. Investigating the performance and properties of dielectric elastomer actuators as a potential means to actuate origami structures

    International Nuclear Information System (INIS)

    Ahmed, S; Ounaies, Z; Frecker, M

    2014-01-01

    Origami engineering aims to combine origami principles with advanced materials to yield active origami shapes, which fold and unfold in response to external stimuli. This paper explores the potential and limitations of dielectric elastomers (DEs) as the enabling material in active origami engineering. DEs are compliant materials in which the coupled electro-mechanical actuation takes advantage of their low modulus and high breakdown strength. Until recently, prestraining of relatively thick DE materials was necessary in order to achieve the high electric fields needed to trigger electrostatic actuation without inducing a dielectric breakdown. Although prestrain improves the breakdown strength of the DE films and reduces the voltage required for actuation, the need for a solid frame to retain the prestrain state is a limitation for the practical implementation of DEs, especially for active origami structures. However, the recent availability of thinner DE materials (50 μm, 130 μm, 260 μm) has made DEs a likely medium for active origami. In this work, the folding and unfolding of DE multilayered structures, along with the realization of origami-inspired 3D shapes, are explored. In addition, an exhaustive study on the fundamentals of DE actuation is done by directly investigating the thickness actuation mechanism and comparing their performance using different electrode types. Finally, changes in dielectric permittivity as a function of strain, electrode type and applied electric field are assessed and analyzed. These fundamental studies are key to obtaining more dramatic folding and to realizing active origami structures using DE materials. (paper)

  4. High-performance thin-film-transistors based on semiconducting-enriched single-walled carbon nanotubes processed by electrical-breakdown strategy

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, B., E-mail: aissab@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada); Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1" è" r" e Avenue, Val d’Or, Québec J9P 1Y3 (Canada); Habib, M.A. [Computer Sciences and Engineering Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Abdul-Hafidh, E.H. [High Energy Physics Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Rosei, F. [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2015-02-15

    Highlights: • We selectively burn metallic single wall carbon nanotubes (SWCNT) by electrical breakdown. • We successfully achieve a semiconducting enriched-SWCNT in TFT configuration. • High performance, like On/Off of 10{sup 5} and a subthreshold swing of 165 mV/decades were obtained. • After PMMA coating, the SWCNT–TFTs were found stables for more than 4 months. - Abstract: Over the past two decades, among remarkable variety of nanomaterials, single-walled carbon nanotubes (SWCNTs) remain the most intriguing and uniquely well suited materials for applications in high-performance electronics. The most advanced technologies require the ability to form purely semiconducting SWCNTs. Here, we report on our strategy based on the well known progressive electrical breakdown process that offer this capability and serves as highly efficient means for selectively removing metallic carbon nanotubes from electronically heterogeneous random networks, deposited on silicon substrates in a thin film transistor (TFT) configuration. We demonstrate the successful achievement of semiconducting enriched-SWCNT networks in TFT scheme that reach On/Off switching ratios of ∼100,000, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades. The obtained TFT devices were then protected with thin film poly(methyl methacrylate) (PMMA) to keep the percolation level of the SWCNTs network spatially and temporally stable, while protecting it from atmosphere exchanges. TFT devices were found to be air-stable and maintained their excellent characteristics in ambient atmosphere for more than 4 months. This approach could work as a platform for future nanotube-based nanoelectronics.

  5. In situ electrical probing and bias-mediated manipulation of dielectric nanotubes in a high-resolution transmission electron microscope

    International Nuclear Information System (INIS)

    Golberg, D.; Mitome, M.; Kurashima, K.; Zhi, C.Y.; Tang, C.C.; Bando, Y.; Lourie, O.

    2006-01-01

    Boron nitride nanotubes filled with magnesium oxides [MgO, MgO 2 ] and/or hydroxide [Mg(OH) 2 ] are electrically probed and delicately manipulated inside a 300 kV JEOL-3000F high-resolution transmission analytical electron microscope equipped with a side-entry 'Nanofactory Instruments' piezoholder. At a low bias the nanotubes demonstrate truly insulating behavior. At a high bias of ±30 V they show reversible breakdown current of several dozens of nA. Under 300 kV electron beam irradiation the nanotubes are positively charged that allows us to perform on-demand manipulation with them through tuning of polarity and/or value of a bias voltage on a gold counterelectrode from -140 to +140 V, owing to the prominent electrostatic nanotube-electrode interactions

  6. The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD.

    Science.gov (United States)

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2017-12-01

    The capacitance and leakage current properties of multilayer La 2 O 3 /Al 2 O 3 dielectric stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La 2 O 3 /Al 2 O 3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO 3 dielectric film, compared with multilayer La 2 O 3 /Al 2 O 3 dielectric stacks, a clear promotion of trapped charges density (N ot ) and a degradation of interface trap density (D it ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO 3 dielectric film compared with multilayer La 2 O 3 /Al 2 O 3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La 2 O 3 /Al 2 O 3 stack is achieved after annealing at a higher temperature for its less defects.

  7. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    International Nuclear Information System (INIS)

    Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

    2015-01-01

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

  8. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2015-06-15

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

  9. Dielectric Properties of PE/Clay Nanocomposites

    Directory of Open Access Journals (Sweden)

    E. David

    2013-01-01

    Full Text Available Polyethylene/nanoclay specimens containing from 0 to 5% nanoclays were prepared from a commercially available premixed PE/nanoclay masterbatch containing 50% wt of nanoclay. The masterbatch was diluted to the desired concentration by adding PE along with various amounts of compatibilizer in order to achieve the best possible dispersion of the nanoclay platelets. The dielectric response of the compounded samples was investigated using a combination of time and frequency-domain spectroscopy in order to cover a wide frequency window. Both techniques were in good agreement when the time-domain data was transformed into frequency-domain data. Despite their low concentration, the addition of the dispersed nanoclays led to a significant alteration of the material dielectric response in the form of the appearance of various interfacial relaxation processes and an increase of charge carrier transport within the insulation material. Moreover, an onset of nonlinear charge transport process was observed at moderate fields for specimens containing a relatively low level of nanoclays. The high-field breakdown strength was shown to have been improved by the incorporation of the nanoparticles, particularly when the exfoliation was enhanced by the use of a maleic anhydride grafted polyethylene compatibilizer.

  10. dc breakdown conditioning and breakdown rate of metals and metallic alloys under ultrahigh vacuum

    CERN Document Server

    Descoeudres, A; Calatroni, S; Taborelli, M; Wuensch, W

    2009-01-01

    RF accelerating structures of the Compact Linear Collider (CLIC) require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of DC and RF breakdown, a DC breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultra-high vacuum in a simple setup. Conditioning speeds and breakdown fields of several metals and alloys have been measured. The average breakdown field after conditioning ranges from 100 MV/m for Al to 850 MV/m for stainless steel, and is around 170 MV/m for Cu which is the present base-line material for CLIC structures. The results indicate clearly that the breakdown field is limited by the cathode. The presence of a thin cuprous oxide film at the surface of copper electrodes significantly increases the breakdown field. On the other hand, the conditioning speed of Mo is improved by removing oxides at t...

  11. High improvement in trap level density and direct current breakdown strength of block polypropylene by doping with a β-nucleating agent

    Science.gov (United States)

    Zhang, Chong; Zha, Jun-Wei; Yan, Hong-Da; Li, Wei-Kang; Dang, Zhi-Min

    2018-02-01

    Polypropylene is one kind of eco-friendly insulating material, which has attracted more attention for use in high voltage direct current (HVDC) insulation due to the long-distance transmission, low loss, and recyclability. In this work, the morphology and thermal and electrical properties of the block polypropylene with various β-nucleating agent (β-NA) contents were investigated. The relative fraction of the β-crystal can reach 64.7% after adding 0.05 wt. % β-NA. The β-NA also greatly reduced the melting point and improved the crystallization temperature. The electrical property results showed that the alternating and direct current breakdown strength and conduction current were obviously improved. In addition, space charge accumulation was significantly suppressed by introducing the β-NA. This work provides an attractive strategy of design and fabrication of polypropylene for HVDC application.

  12. dc breakdown conditioning and breakdown rate of metals and metallic alloys under ultrahigh vacuum

    Directory of Open Access Journals (Sweden)

    A. Descoeudres

    2009-03-01

    Full Text Available The rf accelerating structures of the Compact Linear Collider (CLIC require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of dc and rf breakdown, a dc breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultrahigh vacuum in a simple setup. Conditioning speeds and breakdown fields of several metals and alloys have been measured. The average breakdown field after conditioning ranges from 100  MV/m for Al to 850  MV/m for stainless steel, and is around 170  MV/m for Cu which is the present base-line material for CLIC structures. The results indicate clearly that the breakdown field is limited by the cathode. The presence of a thin cuprous oxide film at the surface of copper electrodes significantly increases the breakdown field. On the other hand, the conditioning speed of Mo is improved by removing oxides at the surface with a vacuum heat treatment, typically at 875°C for 2 hours. Surface finishing treatments of Cu samples only affect the very first breakdowns. More generally, surface treatments have an effect on the conditioning process itself, but not on the average breakdown field reached after the conditioning phase. In analogy to rf, the breakdown probability has been measured in dc with Cu and Mo electrodes. The dc data show similar behavior as rf as a function of the applied electric field.

  13. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  14. Effect of pulse repetition rate and number of pulses in the analysis of polypropylene and high density polyethylene by nanosecond infrared laser induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Leme, Flavio O. [Laboratorio de Quimica Analitica ' Henrique Bergamin Filho' , Centro de Energia Nuclear na Agricultura, Universidade de Sao Paulo, Av. Centenario 303, 13416-000 Piracicaba, SP (Brazil); Godoi, Quienly [Laboratorio de Quimica Analitica ' Henrique Bergamin Filho' , Centro de Energia Nuclear na Agricultura, Universidade de Sao Paulo, Av. Centenario 303, 13416-000 Piracicaba, SP (Brazil); Departamento de Quimica, Universidade Federal de Sao Carlos, Rod. Washington Luis, km 235, 13565-905 Sao Carlos, SP (Brazil); Kiyataka, Paulo H.M. [Centro de Tecnologia de Embalagens, Instituto de Tecnologia de Alimentos, Av. Brasil 2880, 13070-178 Campinas, SP (Brazil); Santos, Dario [Departamento de Ciencias Exatas e da Terra, Universidade Federal de Sao Paulo, Rua Prof. Artur Riedel 275, 09972-270 Diadema, SP (Brazil); Agnelli, Jose A.M. [Departamento de Engenharia de Materiais, Universidade Federal de Sao Carlos, Rod. Washington Luis, km 235, 13565-905 Sao Carlos, SP (Brazil); and others

    2012-02-01

    Pulse repetition rates and the number of laser pulses are among the most important parameters that do affect the analysis of solid materials by laser induced breakdown spectroscopy, and the knowledge of their effects is of fundamental importance for suggesting analytical strategies when dealing with laser ablation processes of polymers. In this contribution, the influence of these parameters in the ablated mass and in the features of craters was evaluated in polypropylene and high density polyethylene plates containing pigment-based PbCrO{sub 4}. Surface characterization and craters profile were carried out by perfilometry and scanning electron microscopy. Area, volume and profile of craters were obtained using Taylor Map software. A laser induced breakdown spectroscopy system consisted of a Q-Switched Nd:YAG laser (1064 nm, 5 ns) and an Echelle spectrometer equipped with ICCD detector were used. The evaluated operating conditions consisted of 10, 25 and 50 laser pulses at 1, 5 and 10 Hz, 250 mJ/pulse (85 J cm{sup -2}), 2 {mu}s delay time and 6 {mu}s integration time gate. Differences in the topographical features among craters of both polymers were observed. The decrease in the repetition rate resulted in irregular craters and formation of edges, especially in polypropylene sample. The differences in the topographical features and ablated masses were attributed to the influence of the degree of crystallinity, crystalline melting temperature and glass transition temperature in the ablation process of the high density polyethylene and polypropylene. It was also observed that the intensities of chromium and lead emission signals obtained at 10 Hz were two times higher than at 5 Hz by keeping the number of laser pulses constant.

  15. High dielectric permittivity and improved mechanical and thermal properties of poly(vinylidene fluoride) composites with low carbon nanotube content: effect of composite processing on phase behavior and dielectric properties.

    Science.gov (United States)

    Kumar, G Sudheer; Vishnupriya, D; Chary, K Suresh; Patro, T Umasankar

    2016-09-23

    The composite processing technique and nanofiller concentration and its functionalization significantly alter the properties of polymer nanocomposites. To realize this, multi-walled carbon nanotubes (CNT) were dispersed in a poly(vinylidene fluoride) (PVDF) matrix at carefully selected CNT concentrations by two illustrious methods, such as solution-cast and melt-mixing. Notwithstanding the processing method, CNTs induced predominantly the γ-phase in PVDF, instead of the commonly obtained β-phase upon nanofiller incorporation, and imparted significant improvements in dielectric properties. Acid-treatment of CNT improved its dispersion and interfacial adhesion significantly with PVDF, and induced a higher γ-phase content and better dielectric properties in PVDF as compared to pristine CNT. Further, the γ-phase content was found to be higher in solution-cast composites than that in melt-mixed counterparts, most likely due to solvent-induced crystallization in a controlled environment and slow solvent evaporation in the former case. However, interestingly, the melt-mixed composites showed a significantly higher dielectric constant at the onset of the CNT networked-structure as compared to the solution-cast composites. This suggests the possible role of CNT breakage during melt-mixing, which might lead to higher space-charge polarization at the polymer-CNT interface, and in turn an increased number of pseudo-microcapacitors in these composites than the solution-cast counterparts. Notably, PVDF with 0.13 vol% (volume fraction, f c  = 0.0013) of acid-treated CNTs, prepared by melt-mixing, displayed the relative permittivity of ∼217 and capacitance of ∼5430 pF, loss tangent of ∼0.4 at 1 kHz and an unprecedented figure of merit of ∼10(5). We suggest a simple hypothesis for the γ-phase formation and evolution of the high dielectric constant in these composites. Further, the high-dielectric composite film showed marked improvements in mechanical and thermal

  16. Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces

    International Nuclear Information System (INIS)

    Schmeisser, D.; Zheng, F.; Perez-Dieste, V.; Himpsel, F.J.; LoNigro, R.; Toro, R.G.; Malandrino, G.; Fragala, I.L.

    2006-01-01

    The composition and chemical bonding of the first atoms across the interface between Si(001) and the dielectric determine the quality of dielectric gate stacks. An analysis of that hidden interface is a challenge as it requires both, high sensitivity and elemental and chemical state information. We used X-ray absorption spectroscopy in total electron yield and total fluorescence yield at the Si2p and the O1s edges to address that issue. We report on results of Pr 2 O 3 /Si(001) as prepared by both, epitaxial growth and metal organic chemical vapor deposition (MOCVD), and compare to the SiO 2 /Si(001) system as a reference. We find evidence for the silicate formation at the interface as derived from the characteristic features at the Si2p and the O1s edges. The results are in line with model experiments in which films of increasing film thickness are deposited in situ on bare Si(001) surfaces

  17. Design and Fabrication of High Gain Multi-element Multi-segment Quarter-sector Cylindrical Dielectric Resonator Antenna

    Science.gov (United States)

    Ranjan, Pinku; Gangwar, Ravi Kumar

    2017-12-01

    A novel design and analysis of quarter cylindrical dielectric resonator antenna (q-CDRA) with multi-element and multi-segment (MEMS) approach has been presented. The MEMS q-CDRA has been designed by splitting four identical quarters from a solid cylinder and then multi-segmentation approach has been utilized to design q-CDRA. The proposed antenna has been designed for enhancement in bandwidth as well as for high gain. For bandwidth enhancement, multi-segmentation method has been explained for the selection of dielectric constant of materials. The performance of the proposed MEMS q-CDRA has been demonstrated with design guideline of MEMS approach. To validate the antenna performance, three segments q-CDRA has been fabricated and analyzed practically. The simulated results have been in good agreement with measured one. The MEMS q-CDRA has wide impedance bandwidth (|S11|≤-10 dB) of 133.8 % with monopole-like radiation pattern. The proposed MEMS q-CDRA has been operating at TM01δ mode with the measured gain of 6.65 dBi and minimum gain of 4.5 dBi in entire operating frequency band (5.1-13.7 GHz). The proposed MEMS q-CDRA may find appropriate applications in WiMAX and WLAN band.

  18. Obstacle-induced spiral vortex breakdown

    OpenAIRE

    Pasche, Simon; Gallaire, François; Dreyer, Matthieu; Farhat, Mohamed

    2014-01-01

    An experimental investigation on vortex breakdown dynamics is performed. An adverse pressure gradient is created along the axis of a wing-tip vortex by introducing a sphere downstream of an elliptical hydrofoil. The instrumentation involves high-speed visualizations with air bubbles used as tracers and 2D Laser Doppler Velocimeter (LDV). Two key parameters are identified and varied to control the onset of vortex breakdown: the swirl number, defined as the maximum azimuthal velocity divided by...

  19. Improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers

    Science.gov (United States)

    Sima, Wenxia; Jiang, Xiongwei; Peng, Qingjun; Sun, Potao

    2018-05-01

    Electrical breakdown is an important physical phenomenon in electrical equipment and electronic devices. Many related models and theories of electrical breakdown have been proposed. However, a widely recognized understanding on the following phenomenon is still lacking: impulse breakdown strength which varies with waveform parameters, decrease in the breakdown strength of AC voltage with increasing frequency, and higher impulse breakdown strength than that of AC. In this work, an improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers is proposed based on the Harmonic oscillator model. Simulation and experimental results show that, the energy of trapped charges obtained from AC stress is higher than that of impulse voltage, and the absorbed activation energy increases with the increase in the electric field frequency. Meanwhile, the frequency-dependent relative dielectric constant ε r and dielectric loss tanδ also affect the absorption of activation energy. The absorbed activation energy and modified trap level synergistically determine the breakdown strength. The mechanism analysis of breakdown strength under various voltage waveforms is consistent with the experimental results. Therefore, the proposed model of activation energy absorption in the present work may provide a new possible method for analyzing and explaining the breakdown phenomenon in semi-crystalline insulating polymers.

  20. A low-cost, Nist-traceable, high performance dielectric resonator Master Oscillator

    International Nuclear Information System (INIS)

    Doolittle, L.R.; Hovater, C.; Merminga, L.; Musson, J.; Wiseman, W.

    1999-01-01

    The current CEBAF Master Oscillator (MO) uses a quartz-based 10 MHz reference to synthesize 70 MHz and 499 MHz, which are then distributed to each of the klystron galleries on site. Due to the specialized nature of CEBAF's MO requirements, it has been determined that an in-house design and fabrication would provide a cost-effective alternative to purchasing or modifying vendor equipment. A Global Positioning System (GPS) disciplined, Direct Digital Synthesis (DDS) based MO is proposed which incorporates low-cost consumer RF components, designed for cellular communications. A 499 MHz Dielectric Resonant Oscillator (DRO) Voltage Controlled Oscillator (VCO) is phase-locked to a GPS-disciplined 10 MHz reference, and micro-tuned via a DDS, in an effort to achieve the lowest phase noise possible

  1. Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Meng-Yin; Chang, Tzu-Hsuan; Ma, Zhenqiang [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhao, Juan [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Xu, Feng; Jacobberger, Robert M.; Arnold, Michael S., E-mail: michael.arnold@wisc.edu [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2015-08-03

    Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. We previously demonstrated stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes as the channel, buckled metal films as electrodes, and unbuckled flexible ion gel films as the dielectric. The FETs were stretchable up to 50% without appreciable degradation in performance before failure of the ion gel film. Here, we show that by buckling the ion gel, the integrity and performance of the nanotube FETs are extended to nearly 90% elongation, limited by the stretchability of the elastomer substrate. The FETs maintain an on/off ratio of >10{sup 4} and a field-effect mobility of 5 cm{sup 2} V{sup −1} s{sup −1} under elongation and demonstrate invariant performance over 1000 stretching cycles.

  2. Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics

    International Nuclear Information System (INIS)

    Wu, Meng-Yin; Chang, Tzu-Hsuan; Ma, Zhenqiang; Zhao, Juan; Xu, Feng; Jacobberger, Robert M.; Arnold, Michael S.

    2015-01-01

    Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. We previously demonstrated stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes as the channel, buckled metal films as electrodes, and unbuckled flexible ion gel films as the dielectric. The FETs were stretchable up to 50% without appreciable degradation in performance before failure of the ion gel film. Here, we show that by buckling the ion gel, the integrity and performance of the nanotube FETs are extended to nearly 90% elongation, limited by the stretchability of the elastomer substrate. The FETs maintain an on/off ratio of >10 4 and a field-effect mobility of 5 cm 2 V −1 s −1 under elongation and demonstrate invariant performance over 1000 stretching cycles

  3. Dielectric passivation schemes for high efficiency n-type c-si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saynova, D.S.; Romijn, I.G.; Cesar, I.; Lamers, M.W.P.E.; Gutjahr, A. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Dingemans, G. [ASM, Kapeldreef 75, B-3001 Leuven (Belgium); Knoops, H.C.M.; Van de Loo, B.W.H.; Kessels, W.M.M. [Eindhoven University of Technology, Department of Appl. Physics, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Siarheyeva, O.; Granneman, E. [Levitech BV, Versterkerstraat 10, 1322AP Almere (Netherlands); Venema, P.R.; Vlooswijk, A.H.G. [Tempress Systems BV, Radeweg 31, 8171 Vaassen (Netherlands); Gautero, L.; Borsa, D.M.

    2013-10-15

    We investigate the impact of different dielectric layers and stacks on the passivation properties of boron doped p{sup ++}-emitters and phosphorous doped n{sup +}-BSFs which are relevant for competitive n-type cell conversion efficiencies. The applied passivation schemes are associated with specific properties at c-Si/dielectric interface and functional mechanisms. In this way we aim to gain a deeper understanding of the passivation mechanism of the differently doped fields within the n-type cells and identify options to further improve the efficiency. The deposition technologies in our study comprise industrial PECVD systems and/or ALD both in industrial and lab scale configurations. In case of p{sup ++}-emitters the best results were achieved by combining field effect and chemical passivation using stacks of low temperature wet chemical oxide and thin ALD-AlOx capped with PECVD-SiNx. The corresponding Implied Voc values were of about (673{+-}2) mV and J{sub 0} of (68{+-}2) fA/cm{sup 2}. For the n{sup +}-BSF passivation the passivation scheme based on SiOx with or without additional AlOx film deposited by a lab scale temporal ALD processes and capped with PECVD-SiNx layer yielded a comparable Implied Voc of (673{+-}2) mV, but then corresponding to J{sub 0} value of (80{+-}15) fA/cm{sup 2}. This passivation scheme is mainly based on the chemical passivation and was also suitable for p{sup ++} surface. This means that we have demonstrated that for n-Pasha cells both the emitter and BSF can be passivated with the same type of passivation that should lead to > 20% cell efficiency. This offers the possibility for transfer this passivation scheme to advanced cell architectures, such as IBC.

  4. Optical Emission Spectroscopy of High-Power Laser-Induced Dielectric Breakdown in Molecular Gases and Their Mixtures: Investigating Early Stages of Plasma Chemical Action in Planetary Atmospheres

    Czech Academy of Sciences Publication Activity Database

    Cihelka, Jaroslav; Matulková, Irena; Sovová, Kristýna; Kamas, Michal; Kubelík, Petr; Ferus, Martin; Juha, Libor; Civiš, Svatopluk

    2009-01-01

    Roč. 39, 3-4 (2009), s. 227-227 ISSN 0169-6149 R&D Projects: GA MŠk LC510; GA MŠk(CZ) LC528; GA ČR GA203/06/1278; GA MŠk LA08024 Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z10100523 Keywords : planetary atmosphere * lasers * spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.053, year: 2009

  5. Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lee, Ching-Sung

    2013-01-01

    This paper reports Al 0.27 Ga 0.73 N/GaN metal–oxide–semiconductor high electron mobility transistors (MOS-HEMTs) with stacked Al 2 O 3 /HfO 2 gate dielectrics by using hydrogen peroxideoxidation/sputtering techniques. The Al 2 O 3 employed as a gate dielectric and surface passivation layer effectively suppresses the gate leakage current, improves RF drain current collapse and exhibits good thermal stability. Moreover, by stacking the good insulating high-k HfO 2 dielectric further suppresses the gate leakage, enhances the dielectric breakdown field and power-added efficiency, and decreases the equivalent oxide thickness. The present MOS-HEMT design has demonstrated superior improvements of 10.1% (16.4%) in the maximum drain–source current (I DS,max ), 11.4% (22.5%) in the gate voltage swing and 12.5%/14.4% (21.9%/22.3%) in the two-terminal gate–drain breakdown/turn-on voltages (BV GD /V ON ), and the present design also demonstrates the lowest gate leakage current and best thermal stability characteristics as compared to two reference MOS-HEMTs with a single Al 2 O 3 /(HfO 2 ) dielectric layer of the same physical thickness. (invited paper)

  6. Influence of stacking morphology and edge nitrogen doping on the dielectric performance of graphene-polymer nanocomposites

    KAUST Repository

    Almadhoun, Mahmoud N.

    2014-05-13

    We demonstrate that functional groups obtained by varying the preparation route of reduced graphene oxide (rGO) highly influence filler morphology and the overall dielectric performance of rGO-relaxor ferroelectric polymer nanocomposite. Specifically, we show that nitrogen-doping by hydrazine along the edges of reduced graphene oxide embedded in poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) results in a dielectric permittivity above 10 000 while maintaining a dielectric loss below 2. This is one of the best-reported dielectric constant/dielectric loss performance values. In contrast, rGO produced by the hydrothermal reduction route shows a much lower enhancement, reaching a maximum dielectric permittivity of 900. Furthermore, functional derivatives present in rGO are found to strongly affect the quality of dispersion and the resultant percolation threshold at low loading levels. However, high leakage currents and lowered breakdown voltages offset the advantages of increased capacitance in these ultrahigh-k systems, resulting in no significant improvement in stored energy density. © 2014 American Chemical Society.

  7. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    Science.gov (United States)

    Chaowen, Liu; Jingping, Xu; Lu, Liu; Hanhan, Lu; Yuan, Huang

    2016-02-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. Project supported by the National Natural Science Foundation of China (No. 61176100).

  8. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    International Nuclear Information System (INIS)

    Liu Chaowen; Xu Jingping; Liu Lu; Lu Hanhan; Huang Yuan

    2016-01-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. (paper)

  9. A Novel Temperature Measurement Approach for a High Pressure Dielectric Barrier Discharge Using Diode Laser Absorption Spectroscopy (Preprint)

    National Research Council Canada - National Science Library

    Leiweke, R. J; Ganguly, B. N

    2006-01-01

    A tunable diode laser absorption spectroscopic technique is used to measure both electronically excited state production efficiency and gas temperature rise in a dielectric barrier discharge in argon...

  10. Super Dielectric Materials.

    Science.gov (United States)

    Fromille, Samuel; Phillips, Jonathan

    2014-12-22

    Evidence is provided here that a class of materials with dielectric constants greater than 10⁵ at low frequency (dielectric materials (SDM), can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 10⁸ in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 10⁴. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc. ), filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution), herein called New Paradigm Super (NPS) capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å) of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to "short" the individual water droplets. Potentially NPS capacitor stacks can surpass "supercapacitors" in volumetric energy density.

  11. Super Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Samuel Fromille

    2014-12-01

    Full Text Available Evidence is provided here that a class of materials with dielectric constants greater than 105 at low frequency (<10−2 Hz, herein called super dielectric materials (SDM, can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 108 in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 104. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc., filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution, herein called New Paradigm Super (NPS capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to “short” the individual water droplets. Potentially NPS capacitor stacks can surpass “supercapacitors” in volumetric energy density.

  12. Estimating porosity and solid dielectric permittivity in the Miami Limestone using high-frequency ground penetrating radar (GPR) measurements at the laboratory scale

    Science.gov (United States)

    Mount, Gregory J.; Comas, Xavier

    2014-10-01

    Subsurface water flow in South Florida is largely controlled by the heterogeneous nature of the karst limestone in the Biscayne aquifer and its upper formation, the Miami Limestone. These heterogeneities are amplified by dissolution structures that induce changes in the aquifer's material and physical properties (i.e., porosity and dielectric permittivity) and create preferential flow paths. Understanding such patterns are critical for the development of realistic groundwater flow models, particularly in the Everglades, where restoration of hydrological conditions is intended. In this work, we used noninvasive ground penetrating radar (GPR) to estimate the spatial variability in porosity and the dielectric permittivity of the solid phase of the limestone at centimeter-scale resolution to evaluate the potential for field-based GPR studies. A laboratory setup that included high-frequency GPR measurements under completely unsaturated and saturated conditions was used to estimate changes in electromagnetic wave velocity through Miami Limestone samples. The Complex Refractive Index Model was used to derive estimates of porosity and dielectric permittivity of the solid phase of the limestone. Porosity estimates of the samples ranged between 45.2 and 66.0% and showed good correspondence with estimates of porosity using analytical and digital image techniques. Solid dielectric permittivity values ranged between 7.0 and 13.0. This study shows the ability of GPR to image the spatial variability of porosity and dielectric permittivity in the Miami Limestone and shows potential for expanding these results to larger scales and other karst aquifers.

  13. Parameters design of the dielectric elastomer spring-roll bending actuator (Conference Presentation)

    Science.gov (United States)

    Li, Jinrong; Liu, Liwu; Liu, Yanju; Leng, Jinsong

    2017-04-01

    Dielectric elastomers are novel soft smart material that could deform sustainably when subjected to external electric field. That makes dielectric elastomers promising materials for actuators. In this paper, a spring-roll actuator that would bend when a high voltage is applied was fabricated based on dielectric elastomer. Using such actuators as active parts, the flexible grippers and inchworm-inspired crawling robots were manufactured, which demonstrated some examples of applications in soft robotics. To guide the parameters design of dielectric elastomer based spring-roll bending actuators, the theoretical model of such actuators was established based on thermodynamic theories. The initial deformation and electrical induced bending angle of actuators were formulated. The failure of actuators was also analyzed considering some typical failure modes like electromechanical instability, electrical breakdown, loss of tension and maximum tolerant stretch. Thus the allowable region of actuators was determined. Then the bending angle-voltage relations and failure voltages of actuators with different parameters, including stretches of the dielectric elastomer film, number of active layers, and dimensions of spring, were investigated. The influences of each parameter on the actuator performances were discussed, providing meaningful guidance to the optical design of the spring-roll bending actuators.

  14. Large energy storage efficiency of the dielectric layer of graphene nanocapacitors.

    Science.gov (United States)

    Bezryadin, A; Belkin, A; Ilin, E; Pak, M; Colla, Eugene V; Hubler, A

    2017-12-08

    Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, Al 2 O 3 dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm -1 (i.e., 1 GV m -1 ), which is much larger than the table value of the Al 2 O 3 dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

  15. Large energy storage efficiency of the dielectric layer of graphene nanocapacitors

    Science.gov (United States)

    Bezryadin, A.; Belkin, A.; Ilin, E.; Pak, M.; Colla, Eugene V.; Hubler, A.

    2017-12-01

    Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, Al2O3 dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm-1 (i.e., 1 GV m-1), which is much larger than the table value of the Al2O3 dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

  16. Grain-Scale Supercharging and Breakdown on Airless Regoliths

    Science.gov (United States)

    Zimmerman, M. I.; Farrell, W. M.; Hartzell, C.M.; Wang, X.; Horanyi, M.; Hurley, D. M.; Hibbitts, K.

    2016-01-01

    Interactions of the solar wind and emitted photoelectrons with airless bodies have been studied extensively. However, the details of how charged particles interact with the regolith at the scale of a single grain have remained largely uncharacterized. Recent efforts have focused upon determining total surface charge under photoemission and solar wind bombardment and the associated electric field and potential. In this work, theory and simulations are used to show that grain-grain charge differences can exceed classical sheath predictions by several orders of magnitude, sometimes reaching dielectric breakdown levels. Temperature-dependent electrical conductivity works against supercharging by allowing current to leak through individual grains; the balance between internal conduction and surface charging controls the maximum possible grain-to-grain electric field. Understanding the finer details of regolith grain charging, conductive equilibrium, and dielectric breakdown will improve future numerical studies of space weathering and dust levitation on airless bodies.

  17. Dielectrically-Loaded Cylindrical Resonator-Based Wireless Passive High-Temperature Sensor

    Directory of Open Access Journals (Sweden)

    Jijun Xiong

    2016-12-01

    Full Text Available The temperature sensor presented in this paper is based on a microwave dielectric resonator, which uses alumina ceramic as a substrate to survive in harsh environments. The resonant frequency of the resonator is determined by the relative permittivity of the alumina ceramic, which monotonically changes with temperature. A rectangular aperture etched on the surface of the resonator works as both an incentive and a coupling device. A broadband slot antenna fed by a coplanar waveguide is utilized as an interrogation antenna to wirelessly detect the sensor signal using a radio-frequency backscattering technique. Theoretical analysis, software simulation, and experiments verified the feasibility of this temperature-sensing system. The sensor was tested in a metal-enclosed environment, which severely interferes with the extraction of the sensor signal. Therefore, frequency-domain compensation was introduced to filter the background noise and improve the signal-to-noise ratio of the sensor signal. The extracted peak frequency was found to monotonically shift from 2.441 to 2.291 GHz when the temperature was varied from 27 to 800 °C, leading to an average absolute sensitivity of 0.19 MHz/°C.

  18. High titer oncolytic measles virus production process by integration of dielectric spectroscopy as online monitoring system.

    Science.gov (United States)

    Grein, Tanja A; Loewe, Daniel; Dieken, Hauke; Salzig, Denise; Weidner, Tobias; Czermak, Peter

    2018-05-01

    Oncolytic viruses offer new hope to millions of patients with incurable cancer. One promising class of oncolytic viruses is Measles virus, but its broad administration to cancer patients is currently hampered by the inability to produce the large amounts of virus needed for treatment (10 10 -10 12 virus particles per dose). Measles virus is unstable, leading to very low virus titers during production. The time of infection and time of harvest are therefore critical parameters in a Measles virus production process, and their optimization requires an accurate online monitoring system. We integrated a probe based on dielectric spectroscopy (DS) into a stirred tank reactor to characterize the Measles virus production process in adherent growing Vero cells. We found that DS could be used to monitor cell adhesion on the microcarrier and that the optimal virus harvest time correlated with the global maximum permittivity signal. In 16 independent bioreactor runs, the maximum Measles virus titer was achieved approximately 40 hr after the permittivity maximum. Compared to an uncontrolled Measles virus production process, the integration of DS increased the maximum virus concentration by more than three orders of magnitude. This was sufficient to achieve an active Measles virus concentration of > 10 10 TCID 50 ml -1 . © 2017 Wiley Periodicals, Inc.

  19. Skin breakdown in acute care pediatrics.

    Science.gov (United States)

    Suddaby, Elizabeth C; Barnett, Scott D; Facteau, Lorna

    2006-04-01

    The purpose of this study was to develop a simple, single-page measurement tool that evaluates risk of skin breakdown in the peadiatric population and apply it to the acutely hospitalized child. Data were collected over a 15-month period from 347 patients on four in-patient units (PICU, medical-surgical, oncology, and adolescents) on skin breakdown using the AHCPR staging guidelines and compared to the total score on the Starkid SkinScale in order to determine its ability to predict skin breakdown. The inter-rater reliability of the Starkid Skin Scale was r2 = 0.85 with an internal reliablity of 0.71. The sensitivity of the total score was low (17.5%) but highly specific (98.5%). The prevalence of skin breakdown in the acutely hospitalized child was 23%, the majority (77.5%) occurring as erythema of the skin. Buttocks, perineum, and occiput were the most common locations of breakdown. Occiput breakdown was more common in critically ill (PICU) patients while diaper dermatitis was more common in the general medical-surgical population.

  20. Small-signal analysis and particle-in-cell simulations of planar dielectric Cherenkov masers for use as high-frequency, moderate-power broadband amplifiers

    International Nuclear Information System (INIS)

    Carlsten, Bruce E.

    2002-01-01

    A small-signal gain analysis of the planar dielectric Cherenkov maser is presented. The analysis results in a Pierce gain solution, with three traveling-wave modes. The analysis shows that the dielectric Cherenkov maser has a remarkable broadband tuning ability near cutoff, while maintaining reasonable gain rates. Numerical simulations verifying the small-signal gain results are presented, using a particle-in-cell code adapted specifically for planar traveling-wave tubes. An instantaneous bandwidth is numerically shown to be very large, and saturated efficiency for a nominal high-power design is shown to be in the range of standard untapered traveling-wave tubes