A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory

International Nuclear Information System (INIS)

Qiao Fengying; Pan Liyang; Wu Dong; Liu Lifang; Xu Jun

2014-01-01

In order to minimize leakage current increase under total ionizing dose (TID) radiation in high density memory circuits, a new isolation technique, combining deep trench isolation (DTI) between the wells, local oxidation of silicon (LOCOS) isolation between the devices within the well, and a P-diffused area in order to limit leakage at the isolation edge is implemented in partly-depleted silicon-on-insulator (PD-SOI) technology. This radiation hardening technique can minimize the layout area by more than 60%, and allows flexible placement of the body contact. Radiation hardened transistors and 256 Kb flash memory chips are designed and fabricated in a 0.6 μm PD-SOI process. Experiments show that no obvious increase in leakage current is observed for single transistors under 1 Mrad(Si) radiation, and that the 256 Kb memory chip still functions well after a TID of 100 krad(Si), with only 50% increase of the active power consumption in read mode. (semiconductor devices)

Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

Science.gov (United States)

Wouters, D. J.; Maes, D.; Goux, L.; Lisoni, J. G.; Paraschiv, V.; Johnson, J. A.; Schwitters, M.; Everaert, J.-L.; Boullart, W.; Schaekers, M.; Willegems, M.; Vander Meeren, H.; Haspeslagh, L.; Artoni, C.; Caputa, C.; Casella, P.; Corallo, G.; Russo, G.; Zambrano, R.; Monchoix, H.; Vecchio, G.; Van Autryve, L.

2006-09-01

Ferroelectric random access memory (FeRAM) is an attractive candidate technology for embedded nonvolatile memory, especially in applications where low power and high program speed are important. Market introduction of high-density FeRAM is, however, lagging behind standard complementary metal-oxide semiconductor (CMOS) because of the difficult integration technology. This paper discusses the major integration issues for high-density FeRAM, based on SrBi2Ta2O9 (strontium bismuth tantalate or SBT), in relation to the fabrication of our stacked cell structure. We have worked in the previous years on the development of SBT-FeRAM integration technology, based on a so-called pseudo-three-dimensional (3D) cell, with a capacitor that can be scaled from quasi two-dimensional towards a true three-dimensional capacitor where the sidewalls will importantly contribute to the signal. In the first phase of our integration development, we integrated our FeRAM cell in a 0.35μm CMOS technology. In a second phase, then, possibility of scaling of our cell is demonstrated in 0.18μm technology. The excellent electrical and reliability properties of the small integrated ferroelectric capacitors prove the feasibility of the technology, while the verification of the potential 3D effect confirms the basic scaling potential of our concept beyond that of the single-mask capacitor. The paper outlines the different material and technological challenges, and working solutions are demonstrated. While some issues are specific to our own cell, many are applicable to different stacked FeRAM cell concepts, or will become more general concerns when more developments are moving into 3D structures.

Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

KAUST Repository

Zong, Baoyu

2013-05-20

A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half-pitch without alignment issues. Depending on the different dry-etch mechanisms in transferring high and low density nanopatterns, suitable dry-etch angles and methods are studied for the transfer of high density nanopatterns. Some novel process methods have also been developed to eliminate the sidewall and other conversion obstacles for obtaining high density of uniform metallic nanopatterns. With these methods, ultrahigh density trilayer crossbar devices (∼2 × 1010 bit cm-2-kilobit electronic memory), which are composed of built-in practical magnetoresistive nanocells, have been achieved. This scalable process that we have developed provides the relevant industries with a cheap means to commercially fabricate three-dimensional high density metal-cell-metal nanodevices. © 2013 IOP Publishing Ltd.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

Science.gov (United States)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

International Nuclear Information System (INIS)

Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

2010-01-01

Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

CREB regulates spine density of lateral amygdala neurons: implications for memory allocation

Directory of Open Access Journals (Sweden)

Derya eSargin

2013-12-01

Full Text Available Neurons may compete against one another for integration into a memory trace. Specifically, neurons in the lateral nucleus of the amygdala with relatively higher levels of CREB seem to be preferentially allocated to a fear memory trace, while neurons with relatively decreased CREB function seem to be excluded from a fear memory trace. CREB is a ubiquitous transcription factor that modulates many diverse cellular processes, raising the question as to which of these CREB-mediated processes underlie memory allocation. CREB is implicated in modulating dendritic spine number and morphology. As dendritic spines are intimately involved in memory formation, we investigated whether manipulations of CREB function alter spine number or morphology of neurons at the time of fear conditioning. We used viral vectors to manipulate CREB function in the lateral amygdala principal neurons in mice maintained in their homecages. At the time that fear conditioning normally occurs, we observed that neurons with high levels of CREB had more dendritic spines, while neurons with low CREB function had relatively fewer spines compared to control neurons. These results suggest that the modulation of spine density provides a potential mechanism for preferential allocation of a subset of neurons to the memory trace.

Radiation effect test on ADC/DAC and high density memory devices with 60Co γ-rays

International Nuclear Information System (INIS)

Xing Kefei; Wang Yueke; Pan Huafeng

2006-01-01

A test platform was constructed for 60 Co γ-ray irradiation experiment of microelectronics, with the aid of computer and a FPGA module. The tested sample devices included analog-to-digital converter AD10465, digital-to-analog converter AD9857, high density Flash memory MEF64M16 and anti-fused PROM XQR17V16, which are used in signal processing module in spaceborne systems. Evaluations were made on their ability of resisting the total dose based on the proper function criterion of the devices. The results showed that AD10465 and AD9857 ran properly after 1.59 kGy(Si) irradiation, but errors were found when MEF64M16 and XQR17V16's total ionizing dose is 0.13 kGy(Si) and 0.99 kGy(Si), respectively. (authors)

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

KAUST Repository

Mohammed, Hanan

2018-04-18

A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

KAUST Repository

Mohammed, Hanan; Corte-Leó n, Hector; Ivanov, Yurii P.; Lopatin, Sergei; Moreno, Julian A.; Chuvilin, Andrey; Salimath, Akshaykumar; Manchon, Aurelien; Kazakova, Olga; Kosel, Jü rgen

2018-01-01

A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.

Correlated electron dynamics and memory in time-dependent density functional theory

International Nuclear Information System (INIS)

Thiele, Mark

2009-01-01

Time-dependent density functional theory (TDDFT) is an exact reformulation of the time-dependent many-electron Schroedinger equation, where the problem of many interacting electrons is mapped onto the Kohn-Sham system of noninteracting particles which reproduces the exact electronic density. In the Kohn-Sham system all non-classical many-body effects are incorporated in the exchange-correlation potential which is in general unknown and needs to be approximated. It is the goal of this thesis to investigate the connection between memory effects and correlated electron dynamics in strong and weak fields. To this end one-dimensional two-electron singlet systems are studied. At the same time these systems include the onedimensional helium atom model, which is an established system to investigate the crucial effects of correlated electron dynamics in external fields. The studies presented in this thesis show that memory effects are negligible for typical strong field processes. Here the approximation of the spatial nonlocality is of primary importance. For the photoabsorption spectra on the other hand the neglect of memory effects leads to qualitative and quantitative errors, which are shown to be connected to transitions of double excitation character. To develop a better understanding of the conditions under which memory effects become important quantum fluid dynamics has been found to be especially suitable. It represents a further exact reformulation of the quantum mechanic many-body problem which is based on hydrodynamic quantities such as density and velocity. Memory effects are shown to be important whenever the velocity field develops strong gradients and dissipative effects contribute. (orig.)

Correlated electron dynamics and memory in time-dependent density functional theory

Energy Technology Data Exchange (ETDEWEB)

Thiele, Mark

2009-07-28

Time-dependent density functional theory (TDDFT) is an exact reformulation of the time-dependent many-electron Schroedinger equation, where the problem of many interacting electrons is mapped onto the Kohn-Sham system of noninteracting particles which reproduces the exact electronic density. In the Kohn-Sham system all non-classical many-body effects are incorporated in the exchange-correlation potential which is in general unknown and needs to be approximated. It is the goal of this thesis to investigate the connection between memory effects and correlated electron dynamics in strong and weak fields. To this end one-dimensional two-electron singlet systems are studied. At the same time these systems include the onedimensional helium atom model, which is an established system to investigate the crucial effects of correlated electron dynamics in external fields. The studies presented in this thesis show that memory effects are negligible for typical strong field processes. Here the approximation of the spatial nonlocality is of primary importance. For the photoabsorption spectra on the other hand the neglect of memory effects leads to qualitative and quantitative errors, which are shown to be connected to transitions of double excitation character. To develop a better understanding of the conditions under which memory effects become important quantum fluid dynamics has been found to be especially suitable. It represents a further exact reformulation of the quantum mechanic many-body problem which is based on hydrodynamic quantities such as density and velocity. Memory effects are shown to be important whenever the velocity field develops strong gradients and dissipative effects contribute. (orig.)

Glucose administration attenuates spatial memory deficits induced by chronic low-power-density microwave exposure.

Science.gov (United States)

Lu, Yonghui; Xu, Shangcheng; He, Mindi; Chen, Chunhai; Zhang, Lei; Liu, Chuan; Chu, Fang; Yu, Zhengping; Zhou, Zhou; Zhong, Min

2012-07-16

Extensive evidence indicates that glucose administration attenuates memory deficits in rodents and humans, and cognitive impairment has been associated with reduced glucose metabolism and uptake in certain brain regions including the hippocampus. In the present study, we investigated whether glucose treatment attenuated memory deficits caused by chronic low-power-density microwave (MW) exposure, and the effect of MW exposure on hippocampal glucose uptake. We exposed Wistar rats to 2.45 GHz pulsed MW irradiation at a power density of 1 mW/cm(2) for 3 h/day, for up to 30 days. MW exposure induced spatial learning and memory impairments in rats. Hippocampal glucose uptake was also reduced by MW exposure in the absence or presence of insulin, but the levels of blood glucose and insulin were not affected. However, these spatial memory deficits were reversed by systemic glucose treatment. Our results indicate that glucose administration attenuates the spatial memory deficits induced by chronic low-power-density MW exposure, and reduced hippocampal glucose uptake may be associated with cognitive impairment caused by MW exposure. Copyright © 2012 Elsevier Inc. All rights reserved.

High estradiol levels improve false memory rates and meta-memory in highly schizotypal women.

Science.gov (United States)

Hodgetts, Sophie; Hausmann, Markus; Weis, Susanne

2015-10-30

Overconfidence in false memories is often found in patients with schizophrenia and healthy participants with high levels of schizotypy, indicating an impairment of meta-cognition within the memory domain. In general, cognitive control is suggested to be modulated by natural fluctuations in oestrogen. However, whether oestrogen exerts beneficial effects on meta-memory has not yet been investigated. The present study sought to provide evidence that high levels of schizotypy are associated with increased false memory rates and overconfidence in false memories, and that these processes may be modulated by natural differences in estradiol levels. Using the Deese-Roediger-McDermott paradigm, it was found that highly schizotypal participants with high estradiol produced significantly fewer false memories than those with low estradiol. No such difference was found within the low schizotypy participants. Highly schizotypal participants with high estradiol were also less confident in their false memories than those with low estradiol; low schizotypy participants with high estradiol were more confident. However, these differences only approached significance. These findings suggest that the beneficial effect of estradiol on memory and meta-memory observed in healthy participants is specific to highly schizotypal individuals and might be related to individual differences in baseline dopaminergic activity. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Assessing the Driver's Current Level of Working Memory Load with High Density Functional Near-infrared Spectroscopy: A Realistic Driving Simulator Study.

Science.gov (United States)

Unni, Anirudh; Ihme, Klas; Jipp, Meike; Rieger, Jochem W

2017-01-01

Cognitive overload or underload results in a decrease in human performance which may result in fatal incidents while driving. We envision that driver assistive systems which adapt their functionality to the driver's cognitive state could be a promising approach to reduce road accidents due to human errors. This research attempts to predict variations of cognitive working memory load levels in a natural driving scenario with multiple parallel tasks and to reveal predictive brain areas. We used a modified version of the n-back task to induce five different working memory load levels (from 0-back up to 4-back) forcing the participants to continuously update, memorize, and recall the previous 'n' speed sequences and adjust their speed accordingly while they drove for approximately 60 min on a highway with concurrent traffic in a virtual reality driving simulator. We measured brain activation using multichannel whole head, high density functional near-infrared spectroscopy (fNIRS) and predicted working memory load level from the fNIRS data by combining multivariate lasso regression and cross-validation. This allowed us to predict variations in working memory load in a continuous time-resolved manner with mean Pearson correlations between induced and predicted working memory load over 15 participants of 0.61 [standard error (SE) 0.04] and a maximum of 0.8. Restricting the analysis to prefrontal sensors placed over the forehead reduced the mean correlation to 0.38 (SE 0.04), indicating additional information gained through whole head coverage. Moreover, working memory load predictions derived from peripheral heart rate parameters achieved much lower correlations (mean 0.21, SE 0.1). Importantly, whole head fNIRS sampling revealed increasing brain activation in bilateral inferior frontal and bilateral temporo-occipital brain areas with increasing working memory load levels suggesting that these areas are specifically involved in workload-related processing.

Aging memory for pictures: using high-density event-related potentials to understand the effect of aging on the picture superiority effect.

Science.gov (United States)

Ally, Brandon A; Waring, Jill D; Beth, Ellen H; McKeever, Joshua D; Milberg, William P; Budson, Andrew E

2008-01-31

High-density event-related potentials (ERPs) were used to understand the effect of aging on the neural correlates of the picture superiority effect. Pictures and words were systematically varied at study and test while ERPs were recorded at retrieval. Here, the results of the word-word and picture-picture study-test conditions are presented. Behavioral results showed that older adults demonstrated the picture superiority effect to a greater extent than younger adults. The ERP data helped to explain these findings. The early frontal effect, parietal effect, and late frontal effect were all indistinguishable between older and younger adults for pictures. In contrast, for words, the early frontal and parietal effects were significantly diminished for the older adults compared to the younger adults. These two old/new effects have been linked to familiarity and recollection, respectively, and the authors speculate that these processes are impaired for word-based memory in the course of healthy aging. The findings of this study suggest that pictures allow older adults to compensate for their impaired memorial processes, and may allow these memorial components to function more effectively in older adults.

Adaptation in human somatosensory cortex as a model of sensory memory construction: a study using high-density EEG.

Science.gov (United States)

Bradley, Claire; Joyce, Niamh; Garcia-Larrea, Luis

2016-01-01

Adaptation in sensory cortices has been seen as a mechanism allowing the creation of transient memory representations. Here we tested the adapting properties of early responses in human somatosensory areas SI and SII by analysing somatosensory-evoked potentials over the very first repetitions of a stimulus. SI and SII generators were identified by well-defined scalp potentials and source localisation from high-density 128-channel EEG. Earliest responses (~20 ms) from area 3b in the depth of the post-central gyrus did not show significant adaptation to stimuli repeated at 300 ms intervals. In contrast, responses around 45 ms from the crown of the gyrus (areas 1 and 2) rapidly lessened to a plateau and abated at the 20th stimulation, and activities from SII in the parietal operculum at ~100 ms displayed strong adaptation with a steady amplitude decrease from the first repetition. Although responses in both SI (1-2) and SII areas showed adapting properties and hence sensory memory capacities, evidence of sensory mismatch detection has been demonstrated only for responses reflecting SII activation. This may index the passage from an early form of sensory storage in SI to more operational memory codes in SII, allowing the prediction of forthcoming input and the triggering of a specific signal when such input differs from the previous sequence. This is consistent with a model whereby the length of temporal receptive windows increases with progression in the cortical hierarchy, in parallel with the complexity and abstraction of neural representations.

Assessing the Driver’s Current Level of Working Memory Load with High Density Functional Near-infrared Spectroscopy: A Realistic Driving Simulator Study

Science.gov (United States)

Unni, Anirudh; Ihme, Klas; Jipp, Meike; Rieger, Jochem W.

2017-01-01

Cognitive overload or underload results in a decrease in human performance which may result in fatal incidents while driving. We envision that driver assistive systems which adapt their functionality to the driver’s cognitive state could be a promising approach to reduce road accidents due to human errors. This research attempts to predict variations of cognitive working memory load levels in a natural driving scenario with multiple parallel tasks and to reveal predictive brain areas. We used a modified version of the n-back task to induce five different working memory load levels (from 0-back up to 4-back) forcing the participants to continuously update, memorize, and recall the previous ‘n’ speed sequences and adjust their speed accordingly while they drove for approximately 60 min on a highway with concurrent traffic in a virtual reality driving simulator. We measured brain activation using multichannel whole head, high density functional near-infrared spectroscopy (fNIRS) and predicted working memory load level from the fNIRS data by combining multivariate lasso regression and cross-validation. This allowed us to predict variations in working memory load in a continuous time-resolved manner with mean Pearson correlations between induced and predicted working memory load over 15 participants of 0.61 [standard error (SE) 0.04] and a maximum of 0.8. Restricting the analysis to prefrontal sensors placed over the forehead reduced the mean correlation to 0.38 (SE 0.04), indicating additional information gained through whole head coverage. Moreover, working memory load predictions derived from peripheral heart rate parameters achieved much lower correlations (mean 0.21, SE 0.1). Importantly, whole head fNIRS sampling revealed increasing brain activation in bilateral inferior frontal and bilateral temporo-occipital brain areas with increasing working memory load levels suggesting that these areas are specifically involved in workload-related processing. PMID

Assessing the Driver’s Current Level of Working Memory Load with High Density Functional Near-infrared Spectroscopy: A Realistic Driving Simulator Study

Directory of Open Access Journals (Sweden)

Anirudh Unni

2017-04-01

Full Text Available Cognitive overload or underload results in a decrease in human performance which may result in fatal incidents while driving. We envision that driver assistive systems which adapt their functionality to the driver’s cognitive state could be a promising approach to reduce road accidents due to human errors. This research attempts to predict variations of cognitive working memory load levels in a natural driving scenario with multiple parallel tasks and to reveal predictive brain areas. We used a modified version of the n-back task to induce five different working memory load levels (from 0-back up to 4-back forcing the participants to continuously update, memorize, and recall the previous ‘n’ speed sequences and adjust their speed accordingly while they drove for approximately 60 min on a highway with concurrent traffic in a virtual reality driving simulator. We measured brain activation using multichannel whole head, high density functional near-infrared spectroscopy (fNIRS and predicted working memory load level from the fNIRS data by combining multivariate lasso regression and cross-validation. This allowed us to predict variations in working memory load in a continuous time-resolved manner with mean Pearson correlations between induced and predicted working memory load over 15 participants of 0.61 [standard error (SE 0.04] and a maximum of 0.8. Restricting the analysis to prefrontal sensors placed over the forehead reduced the mean correlation to 0.38 (SE 0.04, indicating additional information gained through whole head coverage. Moreover, working memory load predictions derived from peripheral heart rate parameters achieved much lower correlations (mean 0.21, SE 0.1. Importantly, whole head fNIRS sampling revealed increasing brain activation in bilateral inferior frontal and bilateral temporo-occipital brain areas with increasing working memory load levels suggesting that these areas are specifically involved in workload

High-bandwidth memory interface

CERN Document Server

Kim, Chulwoo; Song, Junyoung

2014-01-01

This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.   • Enables readers with minimal background in memory design to understand the basics of high-bandwidth memory interface design; • Presents state-of-the-art techniques for memory interface design; • Covers memory interface design at both the circuit level and system architecture level.

Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

International Nuclear Information System (INIS)

Wang Guangli; Chen Yubin; Shi Yi; Pu Lin; Pan Lijia; Zhang Rong; Zheng Youdou

2010-01-01

A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method. (semiconductor devices)

Non-volatile memories

CERN Document Server

Lacaze, Pierre-Camille

2014-01-01

Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

Spatial and Working Memory Is Linked to Spine Density and Mushroom Spines.

Directory of Open Access Journals (Sweden)

Rasha Refaat Mahmmoud

Full Text Available Changes in synaptic structure and efficacy including dendritic spine number and morphology have been shown to underlie neuronal activity and size. Moreover, the shapes of individual dendritic spines were proposed to correlate with their capacity for structural change. Spine numbers and morphology were reported to parallel memory formation in the rat using a water maze but, so far, there is no information on spine counts or shape in the radial arm maze (RAM, a frequently used paradigm for the evaluation of complex memory formation in the rodent.24 male Sprague-Dawley rats were divided into three groups, 8 were trained, 8 remained untrained in the RAM and 8 rats served as cage controls. Dendritic spine numbers and individual spine forms were counted in CA1, CA3 areas and dentate gyrus of hippocampus using a DIL dye method with subsequent quantification by the Neuronstudio software and the image J program.Working memory errors (WME and latency in the RAM were decreased along the training period indicating that animals performed the task. Total spine density was significantly increased following training in the RAM as compared to untrained rats and cage controls. The number of mushroom spines was significantly increased in the trained as compared to untrained and cage controls. Negative significant correlations between spine density and WME were observed in CA1 basal dendrites and in CA3 apical and basal dendrites. In addition, there was a significant negative correlation between spine density and latency in CA3 basal dendrites.The study shows that spine numbers are significantly increased in the trained group, an observation that may suggest the use of this method representing a morphological parameter for memory formation studies in the RAM. Herein, correlations between WME and latency in the RAM and spine density revealed a link between spine numbers and performance in the RAM.

Spatial and Working Memory Is Linked to Spine Density and Mushroom Spines.

Science.gov (United States)

Mahmmoud, Rasha Refaat; Sase, Sunetra; Aher, Yogesh D; Sase, Ajinkya; Gröger, Marion; Mokhtar, Maher; Höger, Harald; Lubec, Gert

2015-01-01

Changes in synaptic structure and efficacy including dendritic spine number and morphology have been shown to underlie neuronal activity and size. Moreover, the shapes of individual dendritic spines were proposed to correlate with their capacity for structural change. Spine numbers and morphology were reported to parallel memory formation in the rat using a water maze but, so far, there is no information on spine counts or shape in the radial arm maze (RAM), a frequently used paradigm for the evaluation of complex memory formation in the rodent. 24 male Sprague-Dawley rats were divided into three groups, 8 were trained, 8 remained untrained in the RAM and 8 rats served as cage controls. Dendritic spine numbers and individual spine forms were counted in CA1, CA3 areas and dentate gyrus of hippocampus using a DIL dye method with subsequent quantification by the Neuronstudio software and the image J program. Working memory errors (WME) and latency in the RAM were decreased along the training period indicating that animals performed the task. Total spine density was significantly increased following training in the RAM as compared to untrained rats and cage controls. The number of mushroom spines was significantly increased in the trained as compared to untrained and cage controls. Negative significant correlations between spine density and WME were observed in CA1 basal dendrites and in CA3 apical and basal dendrites. In addition, there was a significant negative correlation between spine density and latency in CA3 basal dendrites. The study shows that spine numbers are significantly increased in the trained group, an observation that may suggest the use of this method representing a morphological parameter for memory formation studies in the RAM. Herein, correlations between WME and latency in the RAM and spine density revealed a link between spine numbers and performance in the RAM.

Histamine H3 receptor density is negatively correlated with neural activity related to working memory in humans.

Science.gov (United States)

Ito, Takehito; Kimura, Yasuyuki; Seki, Chie; Ichise, Masanori; Yokokawa, Keita; Kawamura, Kazunori; Takahashi, Hidehiko; Higuchi, Makoto; Zhang, Ming-Rong; Suhara, Tetsuya; Yamada, Makiko

2018-06-14

The histamine H 3 receptor is regarded as a drug target for cognitive impairments in psychiatric disorders. H 3 receptors are expressed in neocortical areas, including the prefrontal cortex, the key region of cognitive functions such as working memory. However, the role of prefrontal H 3 receptors in working memory has not yet been clarified. Therefore, using functional magnetic resonance imaging (fMRI) and positron emission tomography (PET) techniques, we aimed to investigate the association between the neural activity of working memory and the density of H 3 receptors in the prefrontal cortex. Ten healthy volunteers underwent both fMRI and PET scans. The N-back task was used to assess the neural activities related to working memory. H 3 receptor density was measured with the selective PET radioligand [ 11 C] TASP457. The neural activity of the right dorsolateral prefrontal cortex during the performance of the N-back task was negatively correlated with the density of H 3 receptors in this region. Higher neural activity of working memory was associated with lower H 3 receptor density in the right dorsolateral prefrontal cortex. This finding elucidates the role of H 3 receptors in working memory and indicates the potential of H 3 receptors as a therapeutic target for the cognitive impairments associated with neuropsychiatric disorders.

Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

Energy Technology Data Exchange (ETDEWEB)

Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

2010-09-01

Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

Sleep spindles during a nap correlate with post sleep memory performance for highly rewarded word-pairs.

Science.gov (United States)

Studte, Sara; Bridger, Emma; Mecklinger, Axel

2017-04-01

The consolidation of new associations is thought to depend in part on physiological processes engaged during non-REM (NREM) sleep, such as slow oscillations and sleep spindles. Moreover, NREM sleep is thought to selectively benefit associations that are adaptive for the future. In line with this, the current study investigated whether different reward cues at encoding are associated with changes in sleep physiology and memory retention. Participants' associative memory was tested after learning a list of arbitrarily paired words both before and after taking a 90-min nap. During learning, word-pairs were preceded by a cue indicating either a high or a low reward for correct memory performance at test. The motivation manipulation successfully impacted retention such that memory declined to a greater extent from pre- to post sleep for low rewarded than for high rewarded word-pairs. In line with previous studies, positive correlations between spindle density during NREM sleep and general memory performance pre- and post-sleep were found. In addition to this, however, a selective positive relationship between memory performance for highly rewarded word-pairs at posttest and spindle density during NREM sleep was also observed. These results support the view that motivationally salient memories are preferentially consolidated and that sleep spindles may be an important underlying mechanism for selective consolidation. Copyright © 2016 Elsevier Inc. All rights reserved.

Exploring memory hierarchy design with emerging memory technologies

CERN Document Server

Sun, Guangyu

2014-01-01

This book equips readers with tools for computer architecture of high performance, low power, and high reliability memory hierarchy in computer systems based on emerging memory technologies, such as STTRAM, PCM, FBDRAM, etc.  The techniques described offer advantages of high density, near-zero static power, and immunity to soft errors, which have the potential of overcoming the “memory wall.”  The authors discuss memory design from various perspectives: emerging memory technologies are employed in the memory hierarchy with novel architecture modification;  hybrid memory structure is introduced to leverage advantages from multiple memory technologies; an analytical model named “Moguls” is introduced to explore quantitatively the optimization design of a memory hierarchy; finally, the vulnerability of the CMPs to radiation-based soft errors is improved by replacing different levels of on-chip memory with STT-RAMs.   ·         Provides a holistic study of using emerging memory technologies i...

Breaking the current density threshold in spin-orbit-torque magnetic random access memory

Science.gov (United States)

Zhang, Yin; Yuan, H. Y.; Wang, X. S.; Wang, X. R.

2018-04-01

Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem is now solved by a new strategy in which the magnitude of the driven current density is fixed while the current direction varies with time. The theoretical limit of minimal reversal current density is only a fraction (the Gilbert damping coefficient) of the threshold current density of the conventional strategy. The Euler-Lagrange equation for the fastest magnetization reversal path and the optimal current pulse is derived for an arbitrary magnetic cell and arbitrary spin-orbit torque. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are, respectively, of the order of 105 A/cm 2 and 106 A/cm 2 far below 107 A/cm 2 and 108 A/cm 2 in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.

High-Density Lipoprotein Cholesterol Level Relates to Working Memory, Immediate and Delayed Cued Recall in Brazilian Older Adults: The Role of Cognitive Reserve.

Science.gov (United States)

Ihle, Andreas; Gouveia, Élvio R; Gouveia, Bruna R; Freitas, Duarte L; Jurema, Jefferson; Tinôco, Maria A; Kliegel, Matthias

2017-01-01

The present study set out to investigate the relation of the high-density lipoprotein cholesterol (HDL-C) level to cognitive performance and its interplay with key markers of cognitive reserve in a large sample of older adults. We assessed tests of working memory, immediate and delayed cued recall in 701 older adults from Amazonas, Brazil. The HDL-C level was derived from fasting blood samples. In addition, we interviewed individuals on their education, past occupation, and cognitive leisure activity. A critically low HDL-C level (cued recall. Moderation analyses suggested that the relations of the HDL-C level to working memory and delayed cued recall were negligible in individuals with longer education, a higher cognitive level of the job, and greater engagement in cognitive leisure activity. Cognitive reserve accumulated during the life course may reduce the detrimental influences of a critically low HDL-C level on cognitive functioning in old age. © 2017 S. Karger AG, Basel.

A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation.

Science.gov (United States)

Zhou, Xilin; Dong, Weiling; Zhang, Hao; Simpson, Robert E

2015-06-11

Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into GeO2 and TeO2, which inhibits the technologically useful abrupt change in properties. Increasing the oxygen content in GeTe-O reduces the difference in film thickness and mass density between the amorphous and crystalline states. For oxygen concentrations between 5 and 6 at.%, the amorphous material and the crystalline material have the same density. Above 6 at.% O doping, crystallisation exhibits an anomalous density change, where the volume of the crystalline state is larger than that of the amorphous. The high thermal stability and zero-density change characteristic of Oxygen-incorporated GeTe, is recommended for efficient and low stress phase change memory devices that may operate at elevated temperatures.

False memories in highly superior autobiographical memory individuals

Science.gov (United States)

Patihis, Lawrence; Frenda, Steven J.; LePort, Aurora K. R.; Petersen, Nicole; Nichols, Rebecca M.; Stark, Craig E. L.; McGaugh, James L.; Loftus, Elizabeth F.

2013-01-01

The recent identification of highly superior autobiographical memory (HSAM) raised the possibility that there may be individuals who are immune to memory distortions. We measured HSAM participants’ and age- and sex-matched controls’ susceptibility to false memories using several research paradigms. HSAM participants and controls were both susceptible to false recognition of nonpresented critical lure words in an associative word-list task. In a misinformation task, HSAM participants showed higher overall false memory compared with that of controls for details in a photographic slideshow. HSAM participants were equally as likely as controls to mistakenly report they had seen nonexistent footage of a plane crash. Finding false memories in a superior-memory group suggests that malleable reconstructive mechanisms may be fundamental to episodic remembering. Paradoxically, HSAM individuals may retrieve abundant and accurate autobiographical memories using fallible reconstructive processes. PMID:24248358

False memories in highly superior autobiographical memory individuals

OpenAIRE

Patihis, Lawrence; Frenda, Steven J.; LePort, Aurora K. R.; Petersen, Nicole; Nichols, Rebecca M.; Stark, Craig E. L.; McGaugh, James L.; Loftus, Elizabeth F.

2013-01-01

The recent identification of highly superior autobiographical memory (HSAM) raised the possibility that there may be individuals who are immune to memory distortions. We measured HSAM participants' and age- and sex-matched controls' susceptibility to false memories using several research paradigms. HSAM participants and controls were both susceptible to false recognition of nonpresented critical lure words in an associative word-list task. In a misinformation task, HSAM participants showed hi...

The Sensory Components of High-Capacity Iconic Memory and Visual Working Memory

OpenAIRE

Bradley, Claire; Pearson, Joel

2012-01-01

Early visual memory can be split into two primary components: a high-capacity, short-lived iconic memory followed by a limited-capacity visual working memory that can last many seconds. Whereas a large number of studies have investigated visual working memory for low-level sensory features, much research on iconic memory has used more “high-level” alphanumeric stimuli such as letters or numbers. These two forms of memory are typically examined separately, despite an intrinsic overlap in their...

The sensory components of high-capacity iconic memory and visual working memory

OpenAIRE

Claire eBradley; Claire eBradley; Joel ePearson

2012-01-01

Early visual memory can be split into two primary components: a high-capacity, short-lived iconic memory followed by a limited-capacity visual working memory that can last many seconds. Whereas a large number of studies have investigated visual working memory for low-level sensory features, much research on iconic memory has used more high-level alphanumeric stimuli such as letters or numbers. These two forms of memory are typically examined separately, despite an intrinsic overlap in their c...

Architectural Techniques to Enable Reliable and Scalable Memory Systems

OpenAIRE

Nair, Prashant J.

2017-01-01

High capacity and scalable memory systems play a vital role in enabling our desktops, smartphones, and pervasive technologies like Internet of Things (IoT). Unfortunately, memory systems are becoming increasingly prone to faults. This is because we rely on technology scaling to improve memory density, and at small feature sizes, memory cells tend to break easily. Today, memory reliability is seen as the key impediment towards using high-density devices, adopting new technologies, and even bui...

High Performance Shape Memory Polyurethane Synthesized with High Molecular Weight Polyol as the Soft Segment

Directory of Open Access Journals (Sweden)

Manzoor Ahmad

2012-05-01

Full Text Available Shape memory polyurethanes (SMPUs are typically synthesized using polyols of low molecular weight (MW~2,000 g/mol as it is believed that the high density of cross-links in these low molecular weight polyols are essential for high mechanical strength and good shape memory effect. In this study, polyethylene glycol (PEG-6000 with MW ~6000 g/mol as the soft segment and diisocyanate as the hard segment were used to synthesize SMPUs, and the results were compared with the SMPUs with polycaprolactone PCL-2000. The study revealed that although the PEG-6000-based SMPUs have lower maximum elongations at break (425% and recovery stresses than those of PCL-based SMPUs, they have much better recovery ratios (up to 98% and shape fixity (up to 95%, hence better shape memory effect. Furthermore, PEG-based SMPUs showed a much shorter actuation time of < 10 s for up to 90% shape recovery compared to typical actuation times of tens of seconds to a few minutes for common SMPUs, demonstrated their great potential for applications in microsystems and other engineering components.

Using NVMe Gen3 PCIe SSD Cards in High-density Servers for High-performance Big Data Transfer Over Multiple Network Channels

Energy Technology Data Exchange (ETDEWEB)

Fang, Chin [SLAC National Accelerator Lab., Menlo Park, CA (United States)

2015-02-07

This Technical Note describes how the Zettar team came up with a data transfer cluster design that convincingly proved the feasibility of using high-density servers for high-performance Big Data transfers. It then outlines the tests, operations, and observations that address a potential over-heating concern regarding the use of Non-Volatile Memory Host Controller Interface Specification (NVMHCI aka NVM Express or NVMe) Gen 3 PCIe SSD cards in high-density servers. Finally, it points out the possibility of developing a new generation of high-performance Science DMZ data transfer system for the data-intensive research community and commercial enterprises.

The Effects of Presentation Method and Information Density on Visual Search Ability and Working Memory Load

Science.gov (United States)

Chang, Ting-Wen; Kinshuk; Chen, Nian-Shing; Yu, Pao-Ta

2012-01-01

This study investigates the effects of successive and simultaneous information presentation methods on learner's visual search ability and working memory load for different information densities. Since the processing of information in the brain depends on the capacity of visual short-term memory (VSTM), the limited information processing capacity…

Cell characteristics of FePt nano-dot memories with a high-k Al2O3 blocking oxide

International Nuclear Information System (INIS)

Lee, Gae Hun; Lee, Jung Min; Yang, Hyung Jun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Testsu

2012-01-01

The cell characteristics of an alloy FePt nano-dot (ND) charge trapping memory with a high-k dielectric as a blocking oxide was investigated. Adoption of a high-k Al 2 O 3 material as a blocking oxide for the metal nano-dot memory provided a superior scaling of the operation voltage compared to silicon oxide under a similar gate leakage level. For the 40-nm-thick high-k (Al 2 O 3 ) blocking oxide, we confirmed an operation voltage reduction of ∼7 V under the same memory window on for silicon dioxide. Also, this device showed a large memory window of 7.8 V and a low leakage current under 10 -10 A in an area of Φ 0.25 mm. From these results, the use of a dielectric (Al 2 O 3 ) as a blocking oxide for a metal nano-dot device is essential, and a metal nano-dot memory with a high-k dielectric will be one of the candidates for a high-density non-volatile memory device.

Magnetic vortex racetrack memory

Science.gov (United States)

Geng, Liwei D.; Jin, Yongmei M.

2017-02-01

We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications.

The sensory components of high-capacity iconic memory and visual working memory.

Science.gov (United States)

Bradley, Claire; Pearson, Joel

2012-01-01

EARLY VISUAL MEMORY CAN BE SPLIT INTO TWO PRIMARY COMPONENTS: a high-capacity, short-lived iconic memory followed by a limited-capacity visual working memory that can last many seconds. Whereas a large number of studies have investigated visual working memory for low-level sensory features, much research on iconic memory has used more "high-level" alphanumeric stimuli such as letters or numbers. These two forms of memory are typically examined separately, despite an intrinsic overlap in their characteristics. Here, we used a purely sensory paradigm to examine visual short-term memory for 10 homogeneous items of three different visual features (color, orientation and motion) across a range of durations from 0 to 6 s. We found that the amount of information stored in iconic memory is smaller for motion than for color or orientation. Performance declined exponentially with longer storage durations and reached chance levels after ∼2 s. Further experiments showed that performance for the 10 items at 1 s was contingent on unperturbed attentional resources. In addition, for orientation stimuli, performance was contingent on the location of stimuli in the visual field, especially for short cue delays. Overall, our results suggest a smooth transition between an automatic, high-capacity, feature-specific sensory-iconic memory, and an effortful "lower-capacity" visual working memory.

The sensory components of high-capacity iconic memory and visual working memory

Directory of Open Access Journals (Sweden)

Claire eBradley

2012-09-01

Full Text Available Early visual memory can be split into two primary components: a high-capacity, short-lived iconic memory followed by a limited-capacity visual working memory that can last many seconds. Whereas a large number of studies have investigated visual working memory for low-level sensory features, much research on iconic memory has used more high-level alphanumeric stimuli such as letters or numbers. These two forms of memory are typically examined separately, despite an intrinsic overlap in their characteristics. Here, we used a purely sensory paradigm to examine visual short-term memory for 10 homogeneous items of 3 different visual features (colour, orientation and motion across a range of durations from 0 to 6 seconds. We found that the amount of information stored in iconic memory is smaller for motion than for colour or orientation. Performance declined exponentially with longer storage durations and reached chance levels after ~2 seconds. Further experiments showed that performance for the 10 items at 1 second was contingent on unperturbed attentional resources. In addition, for orientation stimuli, performance was contingent on the location of stimuli in the visual field, especially for short cue delays. Overall, our results suggest a smooth transition between an automatic, high-capacity, feature-specific sensory-iconic memory and an effortful ‘lower-capacity’ visual working memory.

Earliest Memories and Recent Memories of Highly Salient Events--Are They Similar?

Science.gov (United States)

Peterson, Carole; Fowler, Tania; Brandeau, Katherine M.

2015-01-01

Four- to 11-year-old children were interviewed about 2 different sorts of memories in the same home visit: recent memories of highly salient and stressful events--namely, injuries serious enough to require hospital emergency room treatment--and their earliest memories. Injury memories were scored for amount of unique information, completeness…

Near-Field Thermal Radiation for Solar Thermophotovoltaics and High Temperature Thermal Logic and Memory Applications

Science.gov (United States)

Elzouka, Mahmoud

This dissertation investigates Near-Field Thermal Radiation (NFTR) applied to MEMS-based concentrated solar thermophotovoltaics (STPV) energy conversion and thermal memory and logics. NFTR is the exchange of thermal radiation energy at nano/microscale; when separation between the hot and cold objects is less than dominant radiation wavelength (˜1 mum). NFTR is particularly of interest to the above applications due to its high rate of energy transfer, exceeding the blackbody limit by orders of magnitude, and its strong dependence on separation gap size, surface nano/microstructure and material properties. Concentrated STPV system converts solar radiation to electricity using heat as an intermediary through a thermally coupled absorber/emitter, which causes STPV to have one of the highest solar-to-electricity conversion efficiency limits (85.4%). Modeling of a near-field concentrated STPV microsystem is carried out to investigate the use of STPV based solid-state energy conversion as high power density MEMS power generator. Numerical results for In 0.18Ga0.82Sb PV cell illuminated with tungsten emitter showed significant enhancement in energy transfer, resulting in output power densities as high as 60 W/cm2; 30 times higher than the equivalent far-field power density. On thermal computing, this dissertation demonstrates near-field heat transfer enabled high temperature NanoThermoMechanical memory and logics. Unlike electronics, NanoThermoMechanical memory and logic devices use heat instead of electricity to record and process data; hence they can operate in harsh environments where electronics typically fail. NanoThermoMechanical devices achieve memory and thermal rectification functions through the coupling of near-field thermal radiation and thermal expansion in microstructures, resulting in nonlinear heat transfer between two temperature terminals. Numerical modeling of a conceptual NanoThermoMechanical is carried out; results include the dynamic response under

High-Power-Density, High-Energy-Density Fluorinated Graphene for Primary Lithium Batteries

Directory of Open Access Journals (Sweden)

Guiming Zhong

2018-03-01

Full Text Available Li/CFx is one of the highest-energy-density primary batteries; however, poor rate capability hinders its practical applications in high-power devices. Here we report a preparation of fluorinated graphene (GFx with superior performance through a direct gas fluorination method. We find that the so-called “semi-ionic” C-F bond content in all C-F bonds presents a more critical impact on rate performance of the GFx in comparison with sp2 C content in the GFx, morphology, structure, and specific surface area of the materials. The rate capability remains excellent before the semi-ionic C-F bond proportion in the GFx decreases. Thus, by optimizing semi-ionic C-F content in our GFx, we obtain the optimal x of 0.8, with which the GF0.8 exhibits a very high energy density of 1,073 Wh kg−1 and an excellent power density of 21,460 W kg−1 at a high current density of 10 A g−1. More importantly, our approach opens a new avenue to obtain fluorinated carbon with high energy densities without compromising high power densities.

Magnetic vortex racetrack memory

Energy Technology Data Exchange (ETDEWEB)

Geng, Liwei D.; Jin, Yongmei M., E-mail: ymjin@mtu.edu

2017-02-01

We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications. - Highlights: • Advance fundamental knowledge of current-driven magnetic vortex phenomena. • Report appealing new magnetic racetrack memory based on current-controlled magnetic vortices in nanowires. • Provide a novel approach to adjust current magnitude for data propagation. • Overcome the limitations of domain wall racetrack memory.

A dense voltage-mode Josephson memory cell insensitive to systematic variations in critical current density

International Nuclear Information System (INIS)

Bradley, P.; Van Duzer, T.

1985-01-01

A destructive read-out (DRO) memory cell using three Josephson junctions has been devised whose operation depends only on the ratio of critical currents and application of the proper read/write voltages. The effects of run-to-run and across-thewafer variations in I /SUB c/ are minimized since all three junctions for a given cell are quite close to each other. Additional advantages are: immunity from flux trapping, high circuit density, and fast switching. Since destructive read-out is generally undesirable, a self-rewriting scheme is necessary. Rows and columns of cells with drivers and sense circuits, as well as small memory arrays and decoders have been simulated on SPICE. Power dissipation of cells and bias circuits for a 1K-bit RAM is estimated at about 2 mW. Inclusion of peripheral circuitry raises this by as much as a factor of five depending on the driving scheme and speed desired. Estimated access time is appreciably less than a nanosecond. Preliminary experimental investigations are reported

Towards High Density 3-D Memory in Diamond

Science.gov (United States)

Henshaw, Jacob; Dhomkar, Siddharth; Meriles, Carlos; Jayakumar, Harishankar

The nitrogen-vacancy (NV) center in diamond is presently the focus of widespread attention for applications ranging from quantum information processing to nanoscale metrology. Of great utility is the ability to optically initialize the NV charge state, which has an immediate impact on the center's light emission properties. Here, we use two-color microscopy in NV-rich, type-1b diamond to demonstrate fluorescence-encoded long-term storage of classical information. As a proof of principle, we write, reset, and rewrite various patterns with 2-D binary bit density comparable to present DVD-ROM technology. The strong fluorescence signal originating from the diffraction-limited bit volume allows us to transition from binary to multi-valued encoding, which translates into a significant storage capacity boost. Finally, we show that our technique preserves information written on different planes of the diamond crystal and thus serves as a platform for three-dimensional storage. Substantial enhancement in the bit density could be achieved with the aid of super resolution microscopy techniques already employed to discriminate between NVs with sub-diffraction, nanometer accuracy, a regime where the storage capacity could exceed 1017 bytes/cm3 We acknowledge support from the National Science Foundation through Grant NSF-1314205.

Tunnel field-effect transistor charge-trapping memory with steep subthreshold slope and large memory window

Science.gov (United States)

Kino, Hisashi; Fukushima, Takafumi; Tanaka, Tetsu

2018-04-01

Charge-trapping memory requires the increase of bit density per cell and a larger memory window for lower-power operation. A tunnel field-effect transistor (TFET) can achieve to increase the bit density per cell owing to its steep subthreshold slope. In addition, a TFET structure has an asymmetric structure, which is promising for achieving a larger memory window. A TFET with the N-type gate shows a higher electric field between the P-type source and the N-type gate edge than the conventional FET structure. This high electric field enables large amounts of charges to be injected into the charge storage layer. In this study, we fabricated silicon-oxide-nitride-oxide-semiconductor (SONOS) memory devices with the TFET structure and observed a steep subthreshold slope and a larger memory window.

Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

Energy Technology Data Exchange (ETDEWEB)

Fan, Yang-Shun [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China); Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China); Hsu, Ching-Hui [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China)

2013-12-31

Recently, non-volatile memory (NVM) has been widely used in electronic devices. Nowadays, the prevailing NVM is Flash memory. However, it is generally believed that the conventional Flash memory will approach its scaling limit within about a decade. The resistive random access memory (RRAM) is emerging as one of the potential candidates for future memory replacement because of its high storage density, low power consumption as well as simple structure. The purpose of this work is to develop a reliable a-InGaZnO based resistive switching memory. We investigate the resistive switching characteristics of TiN/Ti/IGZO/Pt structure and TiN/IGZO/Pt structure. The device with TiN/Ti/IGZO/Pt structure exhibits stable bipolar resistive switching. The impact of inserting a Ti interlayer is studied by material analyses. The device shows excellent resistive switching properties. For example, the DC sweep endurance can achieve over 1000 times; and the pulse induced switching cycles can reach at least 10,000 times. Furthermore, the impact of different sputtering ambience, the variable temperature measurement, and the conduction mechanisms are also investigated. According to our experiments, we propose a model to explain the resistive switching phenomenon observed in our devices.

Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications

Science.gov (United States)

Wang, Chao; Song, Bing; Li, Qingjiang; Zeng, Zhongming

2018-03-01

We herein present a novel unidirectional threshold selector for cross-point bipolar RRAM array. The proposed Ag/amorphous Si based threshold selector showed excellent threshold characteristics in positive field, such as high selectivity ( 105), steep slope (type RRAM. By integrating a bipolar RRAM device with the selector, experiments showed that the undesired sneak was significantly suppressed, indicating its potentiality for high-density integrated nonvolatile memory applications.

Chemical mechanical polishing of BTO thin film for vertical sidewall patterning of high-density memory capacitor

International Nuclear Information System (INIS)

Kim, Nam-Hoon; Ko, Pil-Ju; Seo, Yong-Jin; Lee, Woo-Sun

2006-01-01

Most high-k materials cannot to be etched easily. Problems such as low etch rate, poor sidewall angle, plasma damage, and process complexity have emerged in high-density DRAM fabrication. Chemical mechanical polishing (CMP) by the damascene process has been used to pattern high-k materials for high-density capacitor. Barium titanate (BTO) thin film, a typical high-k material, was polished with three types of silica slurry having different pH values. Sufficient removal rate with adequate selectivity to realize the pattern mask of tetra-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle was obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. Planarization was also achieved for the subsequent multilevel processes. Our new CMP approach will provide a guideline for effective patterning of high-k materials by CMP

Modeling of SONOS Memory Cell Erase Cycle

Science.gov (United States)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat H.

2011-01-01

Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

The future of memory

Science.gov (United States)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

MDMA enhances hippocampal-dependent learning and memory under restrictive conditions, and modifies hippocampal spine density.

Science.gov (United States)

Abad, Sònia; Fole, Alberto; del Olmo, Nuria; Pubill, David; Pallàs, Mercè; Junyent, Fèlix; Camarasa, Jorge; Camins, Antonio; Escubedo, Elena

2014-03-01

Addictive drugs produce forms of structural plasticity in the nucleus accumbens and prefrontal cortex. The aim of this study was to investigate the impact of chronic MDMA exposure on pyramidal neurons in the CA1 region of hippocampus and drug-related spatial learning and memory changes. Adolescent rats were exposed to saline or MDMA in a regime that mimicked chronic administration. One week later, when acquisition or reference memory was evaluated in a standard Morris water maze (MWM), no differences were obtained between groups. However, MDMA-exposed animals performed better when the MWM was implemented under more difficult conditions. Animals of MDMA group were less anxious and were more prepared to take risks, as in the open field test they ventured more frequently into the central area. We have demonstrated that MDMA caused an increase in brain-derived neurotrophic factor (BDNF) expression. When spine density was evaluated, MDMA-treated rats presented a reduced density when compared with saline, but overall, training increased the total number of spines, concluding that in MDMA-group, training prevented a reduction in spine density or induced its recovery. This study provides support for the conclusion that binge administration of MDMA, known to be associated to neurotoxic damage of hippocampal serotonergic terminals, increases BDNF expression and stimulates synaptic plasticity when associated with training. In these conditions, adolescent rats perform better in a more difficult water maze task under restricted conditions of learning and memory. The effect on this task could be modulated by other behavioural changes provoked by MDMA.

A vertically integrated capacitorless memory cell

International Nuclear Information System (INIS)

Tong Xiaodong; Wu Hao; Zhao Lichuan; Wang Ming; Zhong Huicai

2013-01-01

A two-port capacitorless PNPN device with high density, high speed and low power memory fabricated using standard CMOS technology is presented. Experiments and calibrated simulations were conducted which prove that this new memory cell has a high operation speed (ns level), large read current margin (read current ratio of 10 4 ×), low process variation, good thermal reliability and available retention time (190 ms). Furthermore, the new memory cell is free of the cyclic endurance/reliability problems induced by hot-carrier injection due to the gateless structure. (semiconductor devices)

Fast Magnetoresistive Random-Access Memory

Science.gov (United States)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1991-01-01

Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

Command vector memory systems: high performance at low cost

OpenAIRE

Corbal San Adrián, Jesús; Espasa Sans, Roger; Valero Cortés, Mateo

1998-01-01

The focus of this paper is on designing both a low cost and high performance, high bandwidth vector memory system that takes advantage of modern commodity SDRAM memory chips. To successfully extract the full bandwidth from SDRAM parts, we propose a new memory system organization based on sending commands to the memory system as opposed to sending individual addresses. A command specifies, in a few bytes, a request for multiple independent memory words. A command is similar to a burst found in...

Towards Terabit Memories

Science.gov (United States)

Hoefflinger, Bernd

Memories have been the major yardstick for the continuing validity of Moore's law. In single-transistor-per-Bit dynamic random-access memories (DRAM), the number of bits per chip pretty much gives us the number of transistors. For decades, DRAM's have offered the largest storage capacity per chip. However, DRAM does not scale any longer, both in density and voltage, severely limiting its power efficiency to 10 fJ/b. A differential DRAM would gain four-times in density and eight-times in energy. Static CMOS RAM (SRAM) with its six transistors/cell is gaining in reputation because it scales well in cell size and operating voltage so that its fundamental advantage of speed, non-destructive read-out and low-power standby could lead to just 2.5 electrons/bit in standby and to a dynamic power efficiency of 2aJ/b. With a projected 2020 density of 16 Gb/cm², the SRAM would be as dense as normal DRAM and vastly better in power efficiency, which would mean a major change in the architecture and market scenario for DRAM versus SRAM. Non-volatile Flash memory have seen two quantum jumps in density well beyond the roadmap: Multi-Bit storage per transistor and high-density TSV (through-silicon via) technology. The number of electrons required per Bit on the storage gate has been reduced since their first realization in 1996 by more than an order of magnitude to 400 electrons/Bit in 2010 for a complexity of 32Gbit per chip at the 32 nm node. Chip stacking of eight chips with TSV has produced a 32GByte solid-state drive (SSD). A stack of 32 chips with 2 b/cell at the 16 nm node will reach a density of 2.5 Terabit/cm². Non-volatile memory with a density of 10 × 10 nm²/Bit is the target for widespread development. Phase-change memory (PCM) and resistive memory (RRAM) lead in cell density, and they will reach 20 Gb/cm² in 2D and higher with 3D chip stacking. This is still almost an order-of-magnitude less than Flash. However, their read-out speed is ~10-times faster, with as yet

SERODS: a new medium for high-density optical data storage

Science.gov (United States)

Vo-Dinh, Tuan; Stokes, David L.

1998-10-01

A new optical dada storage technology based on the surface- enhanced Raman scattering (SERS) effect has been developed for high-density optical memory and three-dimensional data storage. With the surface-enhanced Raman optical data storage (SERODS) technology, the molecular interactions between the optical layer molecules and the nanostructured metal substrate are modified by the writing laser, changing their SERS properties to encode information as bits. Since the SERS properties are extremely sensitive to molecular nano- environments, very small 'spectrochemical holes' approaching the diffraction limit can be produced for the writing process. The SERODS device uses a reading laser to induce the SERS emission of molecules on the disk and a photometric detector tuned to the frequency of the RAMAN spectrum to retrieve the stored information. The results illustrate that SERODS is capable of three-dimensional data storage and has the potential to achieve higher storage density than currently available optical data storage systems.

Temporal context memory in high-functioning autism.

Science.gov (United States)

Gras-Vincendon, Agnès; Mottron, Laurent; Salamé, Pierre; Bursztejn, Claude; Danion, Jean-Marie

2007-11-01

Episodic memory, i.e. memory for specific episodes situated in space and time, seems impaired in individuals with autism. According to weak central coherence theory, individuals with autism have general difficulty connecting contextual and item information which then impairs their capacity to memorize information in context. This study investigated temporal context memory for visual information in individuals with autism. Eighteen adolescents and adults with high-functioning autism (HFA) or Asperger syndrome (AS) and age- and IQ-matched typically developing participants were tested using a recency judgement task. The performance of the autistic group did not differ from that of the control group, nor did the performance between the AS and HFA groups. We conclude that autism in high-functioning individuals does not impair temporal context memory as assessed on this task. We suggest that individuals with autism are as efficient on this task as typically developing subjects because contextual memory performance here involves more automatic than organizational processing.

Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43 film

Directory of Open Access Journals (Sweden)

J. H. Park

2016-02-01

Full Text Available The lower cyclic endurance of Phase Change Memory (PCM devices limits the spread of its applications for reliable memory. The findings reported here show that micro-voids and excess vacancies that are produced during the deposition process and the subsequent growth in sputtered carbon-doped GeSbTe films is one of the major causes of device failure in PCM with cycling. We found that the size of voids in C15(Ge21Sb36Te43 films increased with increasing annealing temperature and the activation energy for the growth rate of voids was determined to be 2.22 eV. The film density, which is closely related to voids, varies with the deposition temperature and sputtering power used. The lower heat of vaporization of elemental Sb and Te compared to that for elemental Ge and C is a major cause of the low density of the film. It was possible to suppress void formation to a considerable extent by optimizing the deposition conditions, which leads to a dramatic enhancement in cyclic endurance by 2 orders of magnitude in PCM devices prepared at 300oC-300W compared to one prepared at 240oC-500W without change of compositions.

TiAu based shape memory alloys for high temperature applications

International Nuclear Information System (INIS)

Wadood, Abdul; Yamabe-Mitarai, Yoko; Hosoda, Hideki

2014-01-01

TiAu (equiatomic) exhibits phase transformaion from B2 (ordered bcc) to thermo-elastic orthorhombic B19 martensite at about 875K and thus TiAu is categorized as high temperature shape memory alloy. In this study, recent research and developments related to TiAu based high temperature shape memory alloys will be discussed in the Introduction part. Then some results of our research group related to strengthening of TiAu based high temperature shape memory alloys will be presented. Potential of TiAu based shape memory alloys for high temperature shape memory materials applications will also be discussed

High-Speed Non-Volatile Optical Memory: Achievements and Challenges

Directory of Open Access Journals (Sweden)

Vadym Zayets

2017-01-01

Full Text Available We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed.

High visual working memory capacity in trait social anxiety.

Science.gov (United States)

Moriya, Jun; Sugiura, Yoshinori

2012-01-01

Working memory capacity is one of the most important cognitive functions influencing individual traits, such as attentional control, fluid intelligence, and also psychopathological traits. Previous research suggests that anxiety is associated with impaired cognitive function, and studies have shown low verbal working memory capacity in individuals with high trait anxiety. However, the relationship between trait anxiety and visual working memory capacity is still unclear. Considering that people allocate visual attention more widely to detect danger under threat, visual working memory capacity might be higher in anxious people. In the present study, we show that visual working memory capacity increases as trait social anxiety increases by using a change detection task. When the demand to inhibit distractors increased, however, high visual working memory capacity diminished in individuals with social anxiety, and instead, impaired filtering of distractors was predicted by trait social anxiety. State anxiety was not correlated with visual working memory capacity. These results indicate that socially anxious people could potentially hold a large amount of information in working memory. However, because of an impaired cognitive function, they could not inhibit goal-irrelevant distractors and their performance decreased under highly demanding conditions.

Hydrodynamic perspective on memory in time-dependent density-functional theory

International Nuclear Information System (INIS)

Thiele, M.; Kuemmel, S.

2009-01-01

The adiabatic approximation of time-dependent density-functional theory is studied in the context of nonlinear excitations of two-electron singlet systems. We compare the exact time evolution of these systems to the adiabatically exact one obtained from time-dependent Kohn-Sham calculations relying on the exact ground-state exchange-correlation potential. Thus, we can show under which conditions the adiabatic approximation breaks down and memory effects become important. The hydrodynamic formulation of quantum mechanics allows us to interpret these results and relate them to dissipative effects in the Kohn-Sham system. We show how the breakdown of the adiabatic approximation can be inferred from the rate of change of the ground-state noninteracting kinetic energy.

Highly Stretchable Non-volatile Nylon Thread Memory

Science.gov (United States)

Kang, Ting-Kuo

2016-04-01

Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

A chiral-based magnetic memory device without a permanent magnet.

Science.gov (United States)

Ben Dor, Oren; Yochelis, Shira; Mathew, Shinto P; Naaman, Ron; Paltiel, Yossi

2013-01-01

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

Non Volatile Flash Memory Radiation Tests

Science.gov (United States)

Irom, Farokh; Nguyen, Duc N.; Allen, Greg

2012-01-01

Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.

High-speed noise-free optical quantum memory

Science.gov (United States)

Kaczmarek, K. T.; Ledingham, P. M.; Brecht, B.; Thomas, S. E.; Thekkadath, G. S.; Lazo-Arjona, O.; Munns, J. H. D.; Poem, E.; Feizpour, A.; Saunders, D. J.; Nunn, J.; Walmsley, I. A.

2018-04-01

Optical quantum memories are devices that store and recall quantum light and are vital to the realization of future photonic quantum networks. To date, much effort has been put into improving storage times and efficiencies of such devices to enable long-distance communications. However, less attention has been devoted to building quantum memories which add zero noise to the output. Even small additional noise can render the memory classical by destroying the fragile quantum signatures of the stored light. Therefore, noise performance is a critical parameter for all quantum memories. Here we introduce an intrinsically noise-free quantum memory protocol based on two-photon off-resonant cascaded absorption (ORCA). We demonstrate successful storage of GHz-bandwidth heralded single photons in a warm atomic vapor with no added noise, confirmed by the unaltered photon-number statistics upon recall. Our ORCA memory meets the stringent noise requirements for quantum memories while combining high-speed and room-temperature operation with technical simplicity, and therefore is immediately applicable to low-latency quantum networks.

Importing low-density ideas to high-density revitalisation

DEFF Research Database (Denmark)

Arnholtz, Jens; Ibsen, Christian Lyhne; Ibsen, Flemming

2016-01-01

Why did union officials from a high-union-density country like Denmark choose to import an organising strategy from low-density countries such as the US and the UK? Drawing on in-depth interviews with key union officials and internal documents, the authors of this article argue two key points. Fi...

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures

Science.gov (United States)

Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo; Lee, Seung Ryul; Chang, Man; Hur, Ji Hyun; Kim, Young-Bae; Kim, Chang-Jung; Seo, David H.; Seo, Sunae; Chung, U.-In; Yoo, In-Kyeong; Kim, Kinam

2011-08-01

Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaOx-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 1012. Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

A review of emerging non-volatile memory (NVM) technologies and applications

Science.gov (United States)

Chen, An

2016-11-01

This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

High Energy Density Laboratory Astrophysics

CERN Document Server

Lebedev, Sergey V

2007-01-01

During the past decade, research teams around the world have developed astrophysics-relevant research utilizing high energy-density facilities such as intense lasers and z-pinches. Every two years, at the International conference on High Energy Density Laboratory Astrophysics, scientists interested in this emerging field discuss the progress in topics covering: - Stellar evolution, stellar envelopes, opacities, radiation transport - Planetary Interiors, high-pressure EOS, dense plasma atomic physics - Supernovae, gamma-ray bursts, exploding systems, strong shocks, turbulent mixing - Supernova remnants, shock processing, radiative shocks - Astrophysical jets, high-Mach-number flows, magnetized radiative jets, magnetic reconnection - Compact object accretion disks, x-ray photoionized plasmas - Ultrastrong fields, particle acceleration, collisionless shocks. These proceedings cover many of the invited and contributed papers presented at the 6th International Conference on High Energy Density Laboratory Astrophys...

High capacity, high speed histogramming data acquisition memory

International Nuclear Information System (INIS)

Epstein, A.; Boulin, C.

1996-01-01

A double width CAMAC DRAM store module was developed for use as a histogramming memory in fast time-resolved synchrotron radiation applications to molecular biology. High speed direct memory modify (3 MHz) is accomplished by using a discrete DRAM controller and fast page mode access. The module can be configured using standard SIMMs to sizes of up to 64M-words. The word width is 16 bit and the module can handle overflows by storing the overflow addresses in a dedicated FIFO. Simultaneous front panel DMM/DMI access and CAMAC readout of the overflow addresses is supported

Plasma Doping - Enabling Technology for High Dose Logic and Memory Applications

International Nuclear Information System (INIS)

Miller, T.; Godet, L.; Papasouliotis, G. D.; Singh, V.

2008-01-01

As logic and memory device dimensions shrink with each generation, there are more high dose implants at lower energies. Examples include dual poly gate (also referred to as counter-doped poly), elevated source drain and contact plug implants. Plasma Doping technology throughput and dopant profile benefits at these ultra high dose and lower energy conditions have been well established [1,2,3]. For the first time a production-worthy plasma doping implanter, the VIISta PLAD tool, has been developed with unique architecture suited for precise and repeatable dopant placement. Critical elements of the architecture include pulsed DC wafer bias, closed-loop dosimetry and a uniform low energy, high density plasma source. In this paper key performance metrics such as dose uniformity, dose repeatability and dopant profile control will be presented that demonstrate the production-worthiness of the VIISta PLAD tool for several high dose applications.

Endocannabinoids in the rat basolateral amygdala enhance memory consolidation and enable glucocorticoid modulation of memory

OpenAIRE

Campolongo, Patrizia; Roozendaal, Benno; Trezza, Viviana; Hauer, Daniela; Schelling, Gustav; McGaugh, James L.; Cuomo, Vincenzo

2009-01-01

Extensive evidence indicates that the basolateral complex of the amygdala (BLA) modulates the consolidation of memories for emotionally arousing experiences, an effect that involves the activation of the glucocorticoid system. Because the BLA expresses high densities of cannabinoid CB1 receptors, the present experiments investigated whether the endocannabinoid system in the BLA influences memory consolidation and whether glucocorticoids interact with this system. The CB1 receptor agonist WIN5...

High-density multicore fibers

DEFF Research Database (Denmark)

Takenaga, K.; Matsuo, S.; Saitoh, K.

2016-01-01

High-density single-mode multicore fibers were designed and fabricated. A heterogeneous 30-core fiber realized a low crosstalk of −55 dB. A quasi-single-mode homogeneous 31-core fiber attained the highest core count as a single-mode multicore fiber.......High-density single-mode multicore fibers were designed and fabricated. A heterogeneous 30-core fiber realized a low crosstalk of −55 dB. A quasi-single-mode homogeneous 31-core fiber attained the highest core count as a single-mode multicore fiber....

High-field, high-density tokamak power reactor

International Nuclear Information System (INIS)

Cohn, D.R.; Cook, D.L.; Hay, R.D.; Kaplan, D.; Kreischer, K.; Lidskii, L.M.; Stephany, W.; Williams, J.E.C.; Jassby, D.L.; Okabayashi, M.

1977-11-01

A conceptual design of a compact (R 0 = 6.0 m) high power density (average P/sub f/ = 7.7 MW/m 3 ) tokamak demonstration power reactor has been developed. High magnetic field (B/sub t/ = 7.4 T) and moderate elongation (b/a = 1.6) permit operation at the high density (n(0) approximately 5 x 10 14 cm -3 ) needed for ignition in a relatively small plasma, with a spatially-averaged toroidal beta of only 4%. A unique design for the Nb 3 Sn toroidal-field magnet system reduces the stress in the high-field trunk region, and allows modularization for simpler disassembly. The modest value of toroidal beta permits a simple, modularized plasma-shaping coil system, located inside the TF coil trunk. Heating of the dense central plasma is attained by the use of ripple-assisted injection of 120-keV D 0 beams. The ripple-coil system also affords dynamic control of the plasma temperature during the burn period. A FLIBE-lithium blanket is designed especially for high-power-density operation in a high-field environment, and gives an overall tritium breeding ratio of 1.05 in the slowly pumped lithium

High density harp for SSCL linac

International Nuclear Information System (INIS)

Fritsche, C.T.; Krogh, M.L.; Crist, C.E.

1993-01-01

AlliedSignal Inc., Kansas City Division, and the Superconducting Super Collider Laboratory (SSCL) are collaboratively developing a high density harp for the SSCL linac. This harp is designed using hybrid microcircuit (HMC) technology to obtain a higher wire density than previously available. The developed harp contains one hundred twenty-eight 33-micron-diameter carbon wires on 0.38-mm centers. The harp features an onboard broken wire detection circuit. Carbon wire preparation and attachment processes were developed. High density surface mount connectors were located. The status of high density harp development will be presented along with planned future activities

High density harp for SSCL linac

International Nuclear Information System (INIS)

Fritsche, C.T.; Krogh, M.L.

1993-05-01

AlliedSignal Inc., Kansas City Division, and the Superconducting Super Collider Laboratory (SSCL) are collaboratively developing a high density harp for the SSCL linac. This harp is designed using hybrid microcircuit (HMC) technology to obtain a higher wire density than previously available. The developed harp contains one hundred twenty-eight 33-micron-diameter carbon wires on 0.38-mm centers. The harp features an onboard broken wire detection circuit. Carbon wire preparation and attachment processes were developed. High density surface mount connectors were located. The status of high density harp development will be presented along with planned future activities

Towards realising high-speed large-bandwidth quantum memory

Institute of Scientific and Technical Information of China (English)

SHI BaoSen; DING DongSheng

2016-01-01

Indispensable for quantum communication and quantum computation,quantum memory executes on demand storage and retrieval of quantum states such as those of a single photon,an entangled pair or squeezed states.Among the various forms of quantum memory,Raman quantum memory has advantages forits broadband and high-speed characteristics,which results in a huge potential for applications in quantum networks and quantum computation.However,realising Raman quantum memory with true single photons and photonic entanglementis challenging.In this review,after briefly introducing the main benchmarks in the development of quantum memory and describing the state of the art,we focus on our recent experimental progress inquantum memorystorage of quantum states using the Raman scheme.

Carbon nanomaterials for non-volatile memories

Science.gov (United States)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

High density dispersion fuel

International Nuclear Information System (INIS)

Hofman, G.L.

1996-01-01

A fuel development campaign that results in an aluminum plate-type fuel of unlimited LEU burnup capability with an uranium loading of 9 grams per cm 3 of meat should be considered an unqualified success. The current worldwide approved and accepted highest loading is 4.8 g cm -3 with U 3 Si 2 as fuel. High-density uranium compounds offer no real density advantage over U 3 Si 2 and have less desirable fabrication and performance characteristics as well. Of the higher-density compounds, U 3 Si has approximately a 30% higher uranium density but the density of the U 6 X compounds would yield the factor 1.5 needed to achieve 9 g cm -3 uranium loading. Unfortunately, irradiation tests proved these peritectic compounds have poor swelling behavior. It is for this reason that the authors are turning to uranium alloys. The reason pure uranium was not seriously considered as a dispersion fuel is mainly due to its high rate of growth and swelling at low temperatures. This problem was solved at least for relatively low burnup application in non-dispersion fuel elements with small additions of Si, Fe, and Al. This so called adjusted uranium has nearly the same density as pure α-uranium and it seems prudent to reconsider this alloy as a dispersant. Further modifications of uranium metal to achieve higher burnup swelling stability involve stabilization of the cubic γ phase at low temperatures where normally α phase exists. Several low neutron capture cross section elements such as Zr, Nb, Ti and Mo accomplish this in various degrees. The challenge is to produce a suitable form of fuel powder and develop a plate fabrication procedure, as well as obtain high burnup capability through irradiation testing

High regression rate, high density hybrid fuels, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR program will investigate high energy density novel nanofuels combined with high density binders for use with an N2O oxidizer. Terves has developed...

Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency

Science.gov (United States)

Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A.; Chen, Ying-Cheng

2018-05-01

Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

Developing prospects of NiAlMn high temperature shape memory alloy

International Nuclear Information System (INIS)

Zou Min

1999-01-01

The reason and information on high temperature shape memory alloy research are introduced briefly Also, referring to some experimental reports on NiAlMn high temperature shape memory alloy, it is pointed out that ductility and memory property of this alloy can be improved by adapting proper composition and procedure to control its microstructure. Meanwhile, the engineering details must be considered when NiAlMn high temperature shape memory alloy being developed so as to resolve the problems of its practical use

Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

National Research Council Canada - National Science Library

Ahn, Charles H

2006-01-01

The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

Perovskites: Is the ultimate memory in sight?

Science.gov (United States)

Kingon, Angus

2006-04-01

With silicon microelectronics approaching fundamental limits, new concepts for high-density memory devices are sought. The individual switching of dislocations in oxides may offer just the right alternative.

Multilevel SOT-MRAM Cell with a Novel Sensing Scheme for High-Density Memory Applications

DEFF Research Database (Denmark)

Zeinali, Behzad; Esmaeili, Mahsa; Madsen, Jens Kargaard

2017-01-01

This paper presents a multilevel spin-orbit torque magnetic random access memory (SOT-MRAM). The conventional SOT-MRAMs enables a reliable and energy efficient write operation. However, these cells require two access transistors per cell, hence the efficiency of the SOTMRAMs can be questioned in ...

A Facile and General Approach to Recoverable High-Strain Multishape Shape Memory Polymers.

Science.gov (United States)

Li, Xingjian; Pan, Yi; Zheng, Zhaohui; Ding, Xiaobin

2018-03-01

Fabricating a single polymer network with no need to design complex structures to achieve an ideal combination of tunable high-strain multiple-shape memory effects and highly recoverable shape memory property is a great challenge for the real applications of advanced shape memory devices. Here, a facile and general approach to recoverable high-strain multishape shape memory polymers is presented via a random copolymerization of acrylate monomers and a chain-extended multiblock copolymer crosslinker. As-prepared shape memory networks show a large width at the half-peak height of the glass transition, far wider than current classical multishape shape memory polymers. A combination of tunable high-strain multishape memory effect and as high as 1000% recoverable strain in a single chemical-crosslinking network can be obtained. To the best of our knowledge, this is the first thermosetting material with a combination of highly recoverable strain and tunable high-strain multiple-shape memory effects. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetization of High Density Hadronic Fluid

DEFF Research Database (Denmark)

Bohr, Henrik; Providencia, Constanca; da Providencia, João

2012-01-01

In the present paper the magnetization of a high density relativistic fluid of elementary particles is studied. At very high densities, such as may be found in the interior of a neutron star, when the external magnetic field is gradually increased, the energy of the normal phase of the fluid...... in the particle fluid. For nuclear densities above 2 to 3 rho(0), where rho(0) is the equilibrium nuclear density, the resulting magnetic field turns out to be rather huge, of the order of 10(17) Gauss....

Endocannabinoids in the rat basolateral amygdala enhance memory consolidation and enable glucocorticoid modulation of memory

NARCIS (Netherlands)

Campolongo, Patrizia; Roozendaal, Benno; Trezza, Viviana; Hauer, Daniela; Schelling, Gustav; McGaugh, James L.; Cuomo, Vincenzo

2009-01-01

Extensive evidence indicates that the basolateral complex of the amygdala (BLA) modulates the consolidation of memories for emotionally arousing experiences, an effect that involves the activation of the glucocorticoid system. Because the BLA expresses high densities of cannabinoid CB1 receptors,

Randomized controlled trial evaluating the temporal effects of high-intensity exercise on learning, short-term and long-term memory, and prospective memory.

Science.gov (United States)

Frith, Emily; Sng, Eveleen; Loprinzi, Paul D

2017-11-01

The broader purpose of this study was to examine the temporal effects of high-intensity exercise on learning, short-term and long-term retrospective memory and prospective memory. Among a sample of 88 young adult participants, 22 were randomized into one of four different groups: exercise before learning, control group, exercise during learning, and exercise after learning. The retrospective assessments (learning, short-term and long-term memory) were assessed using the Rey Auditory Verbal Learning Test. Long-term memory including a 20-min and 24-hr follow-up assessment. Prospective memory was assessed using a time-based procedure by having participants contact (via phone) the researchers at a follow-up time period. The exercise stimulus included a 15-min bout of progressive maximal exertion treadmill exercise. High-intensity exercise prior to memory encoding (vs. exercise during memory encoding or consolidation) was effective in enhancing long-term memory (for both 20-min and 24-h follow-up assessments). We did not observe a differential temporal effect of high-intensity exercise on short-term memory (immediate post-memory encoding), learning or prospective memory. The timing of high-intensity exercise may play an important role in facilitating long-term memory. © 2017 Federation of European Neuroscience Societies and John Wiley & Sons Ltd.

Auditory mismatch negativity in schizophrenia: topographic evaluation with a high-density recording montage.

Science.gov (United States)

Hirayasu, Y; Potts, G F; O'Donnell, B F; Kwon, J S; Arakaki, H; Akdag, S J; Levitt, J J; Shenton, M E; McCarley, R W

1998-09-01

The mismatch negativity, a negative component in the auditory event-related potential, is thought to index automatic processes involved in sensory or echoic memory. The authors' goal in this study was to examine the topography of auditory mismatch negativity in schizophrenia with a high-density, 64-channel recording montage. Mismatch negativity topography was evaluated in 23 right-handed male patients with schizophrenia who were receiving medication and in 23 nonschizophrenic comparison subjects who were matched in age, handedness, and parental socioeconomic status. The Positive and Negative Syndrome Scale was used to measure psychiatric symptoms. Mismatch negativity amplitude was reduced in the patients with schizophrenia. They showed a greater left-less-than-right asymmetry than comparison subjects at homotopic electrode pairs near the parietotemporal junction. There were correlations between mismatch negativity amplitude and hallucinations at left frontal electrodes and between mismatch negativity amplitude and passive-apathetic social withdrawal at left and right frontal electrodes. Mismatch negativity was reduced in schizophrenia, especially in the left hemisphere. This finding is consistent with abnormalities of primary or adjacent auditory cortex involved in auditory sensory or echoic memory.

Communication and Memory Architecture Design of Application-Specific High-End Multiprocessors

Directory of Open Access Journals (Sweden)

Yahya Jan

2012-01-01

Full Text Available This paper is devoted to the design of communication and memory architectures of massively parallel hardware multiprocessors necessary for the implementation of highly demanding applications. We demonstrated that for the massively parallel hardware multiprocessors the traditionally used flat communication architectures and multi-port memories do not scale well, and the memory and communication network influence on both the throughput and circuit area dominates the processors influence. To resolve the problems and ensure scalability, we proposed to design highly optimized application-specific hierarchical and/or partitioned communication and memory architectures through exploring and exploiting the regularity and hierarchy of the actual data flows of a given application. Furthermore, we proposed some data distribution and related data mapping schemes in the shared (global partitioned memories with the aim to eliminate the memory access conflicts, as well as, to ensure that our communication design strategies will be applicable. We incorporated these architecture synthesis strategies into our quality-driven model-based multi-processor design method and related automated architecture exploration framework. Using this framework, we performed a large series of experiments that demonstrate many various important features of the synthesized memory and communication architectures. They also demonstrate that our method and related framework are able to efficiently synthesize well scalable memory and communication architectures even for the high-end multiprocessors. The gains as high as 12-times in performance and 25-times in area can be obtained when using the hierarchical communication networks instead of the flat networks. However, for the high parallelism levels only the partitioned approach ensures the scalability in performance.

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

International Nuclear Information System (INIS)

Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

2014-01-01

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

Does high memory load kick task-irrelevant information out of visual working memory?

Science.gov (United States)

Yin, Jun; Zhou, Jifan; Xu, Haokui; Liang, Junying; Gao, Zaifeng; Shen, Mowei

2012-04-01

The limited capacity of visual working memory (VWM) requires the existence of an efficient information selection mechanism. While it has been shown that under low VWM load, an irrelevant simple feature can be processed, its fate under high load (e.g., six objects) remains unclear. We explored this issue by probing the "irrelevant-change distracting effect," in which the change of a stored irrelevant feature affects performance. Simple colored shapes were used as stimuli, with color as the target. Using a whole-probe method (presenting six objects in both the memory and test arrays), in Experiment 1 we found that a change to one of the six shapes led to a significant distracting effect. Using a partial-probe method (presenting the probe either at the screen center or at a location selected from the memory array), in Experiment 2 we showed the distracting effect again. These results suggest that irrelevant simple features can be stored into VWM, regardless of memory load.

Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3)

National Research Council Canada - National Science Library

Likharev, Konstantin K; Ma, Tso-Ping

2006-01-01

.... If demonstrated in silicon-compatible materials with sufficient endurance under electric stress, this effect may enable high-density, high-speed nonvolatile memories that may potentially replace DRAM...

High-calorie food-cues impair working memory performance in high and low food cravers.

Science.gov (United States)

Meule, Adrian; Skirde, Ann Kathrin; Freund, Rebecca; Vögele, Claus; Kübler, Andrea

2012-10-01

The experience of food craving can lead to cognitive impairments. Experimentally induced chocolate craving exhausts cognitive resources and, therefore, impacts working memory, particularly in trait chocolate cravers. In the current study, we investigated the effects of exposure to food-cues on working memory task performance in a group with frequent and intense (high cravers, n=28) and less pronounced food cravings (low cravers, n=28). Participants performed an n-back task that contained either pictures of high-calorie sweets, high-calorie savory foods, or neutral objects. Current subjective food craving was assessed before and after the task. All participants showed slower reaction times and made more omission errors in response to food-cues, particularly savory foods. There were no differences in task performance between groups. State cravings did not differ between groups before the task, but increased more in high cravers compared to low cravers during the task. Results support findings about food cravings impairing visuo-spatial working memory performance independent of trait cravings. They further show that this influence is not restricted to chocolate, but also applies to high-calorie savory foods. Limiting working memory capacity may be especially crucial in persons who are more prone to high-calorie food-cues and experience such cravings habitually. Copyright © 2012 Elsevier Ltd. All rights reserved.

Non-volatile memory based on the ferroelectric photovoltaic effect

Science.gov (United States)

Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

2013-01-01

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

Mechanisms of Memory Dysfunction during High Altitude Hypoxia Training in Military Aircrew.

Science.gov (United States)

Nation, Daniel A; Bondi, Mark W; Gayles, Ellis; Delis, Dean C

2017-01-01

Cognitive dysfunction from high altitude exposure is a major cause of civilian and military air disasters. Pilot training improves recognition of the early symptoms of altitude exposure so that countermeasures may be taken before loss of consciousness. Little is known regarding the nature of cognitive impairments manifesting within this critical window when life-saving measures may still be taken. Prior studies evaluating cognition during high altitude simulation have predominantly focused on measures of reaction time and other basic attention or motor processes. Memory encoding, retention, and retrieval represent critical cognitive functions that may be vulnerable to acute hypoxic/ischemic events and could play a major role in survival of air emergencies, yet these processes have not been studied in the context of high altitude simulation training. In a series of experiments, military aircrew underwent neuropsychological testing before, during, and after brief (15 min) exposure to high altitude simulation (20,000 ft) in a pressure-controlled chamber. Acute exposure to high altitude simulation caused rapid impairment in learning and memory with relative preservation of basic visual and auditory attention. Memory dysfunction was predominantly characterized by deficiencies in memory encoding, as memory for information learned during high altitude exposure did not improve after washout at sea level. Retrieval and retention of memories learned shortly before altitude exposure were also impaired, suggesting further impairment in memory retention. Deficits in memory encoding and retention are rapidly induced upon exposure to high altitude, an effect that could impact life-saving situational awareness and response. (JINS, 2017, 23, 1-10).

Density measurements of small amounts of high-density solids by a floatation method

International Nuclear Information System (INIS)

Akabori, Mitsuo; Shiba, Koreyuki

1984-09-01

A floatation method for determining the density of small amounts of high-density solids is described. The use of a float combined with an appropriate floatation liquid allows us to measure the density of high-density substances in small amounts. Using the sample of 0.1 g in weight, the floatation liquid of 3.0 g cm -3 in density and the float of 1.5 g cm -3 in apparent density, the sample densities of 5, 10 and 20 g cm -3 are determined to an accuracy better than +-0.002, +-0.01 and +-0.05 g cm -3 , respectively that correspond to about +-1 x 10 -5 cm 3 in volume. By means of appropriate degassing treatments, the densities of (Th,U)O 2 pellets of --0.1 g in weight and --9.55 g cm -3 in density were determined with an accuracy better than +-0.05 %. (author)

High-strength shape memory steels alloyed with nitrogen

International Nuclear Information System (INIS)

Ullakko, K.; Jakovenko, P.T.; Gavriljuk, V.G.

1996-01-01

Since shape memory effect in Fe-Mn-Si systems was observed, increasing attention has been paid to iron based shape memory alloys due to their great technological potential. Properties of Fe-Mn-Si shape memory alloys have been improved by alloying with Cr, Ni, Co and C. A significant improvement on shape memory, mechanical and corrosion properties is attained by introducing nitrogen in Fe-Mn-Si based systems. By increasing the nitrogen content, strength of the matrix increases and the stacking fault energy decreases, which promote the formation of stress induced martensite and decrease permanent slip. The present authors have shown that nitrogen alloyed shape memory steels exhibit recoverable strains of 2.5--4.2% and recovery stresses of 330 MPa. In some cases, stresses over 700 MPa were attained at room temperature after cooling a constrained sample. Yield strengths of these steels can be as high as 1,100 MPa and tensile strengths over 1,500 MPa with elongations of 30%. In the present study, effect of nitrogen alloying on shape memory and mechanical properties of Fe-Mn-Si, Fe-Mn-Si-Cr-Ni and Fe-Mn-Cr-Ni-V alloys is studied. Nitrogen alloying is shown to exhibit a beneficial effect on shape memory properties and strength of these steels

Novel nano materials for high performance logic and memory devices

Science.gov (United States)

Das, Saptarshi

device area -- in this way ultimately improving the packing density and leading towards high performance memory devices.

Electric-field-controlled interface dipole modulation for Si-based memory devices.

Science.gov (United States)

Miyata, Noriyuki

2018-05-31

Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

Research on high energy density plasmas and applications

International Nuclear Information System (INIS)

1999-01-01

Recently, technologies on lasers, accelerators, and pulse power machines have been significantly advanced and input power density covers the intensity range from 10 10 W/cm 2 to higher than 10 20 W/cm 2 . As the results, high pressure gas and solid targets can be heated up to very high temperature to create hot dense plasmas which have never appeared on the earth. The high energy density plasmas opened up new research fields such as inertial confinement fusion, high brightness X-ray radiation sources, interiors of galactic nucleus,supernova, stars and planets, ultra high pressure condensed matter physics, plasma particle accelerator, X-ray laser, and so on. Furthermore, since these fields are intimately connected with various industrial sciences and technologies, the high energy density plasma is now studied in industries, government institutions, and so on. This special issue of the Journal of Plasma Physics and Nuclear Fusion Research reviews the high energy density plasma science for the comprehensive understanding of such new fields. In May, 1998, the review committee for investigating the present status and the future prospects of high energy density plasma science was established in the Japan Society of Plasma Science and Nuclear Fusion Research. We held three committee meetings to discuss present status and critical issues of research items related to high energy density plasmas. This special issue summarizes the understandings of the committee. This special issue consists of four chapters: They are Chapter 1: Physics important in the high energy density plasmas, Chapter 2: Technologies related to the plasma generation; drivers such as lasers, pulse power machines, particle beams and fabrication of various targets, Chapter 3: Plasma diagnostics important in high energy density plasma experiments, Chapter 4: A variety of applications of high energy density plasmas; X-ray radiation, particle acceleration, inertial confinement fusion, laboratory astrophysics

Toward Low-Cost, High-Energy Density, and High-Power Density Lithium-Ion Batteries

Science.gov (United States)

Li, Jianlin; Du, Zhijia; Ruther, Rose E.; AN, Seong Jin; David, Lamuel Abraham; Hays, Kevin; Wood, Marissa; Phillip, Nathan D.; Sheng, Yangping; Mao, Chengyu; Kalnaus, Sergiy; Daniel, Claus; Wood, David L.

2017-09-01

Reducing cost and increasing energy density are two barriers for widespread application of lithium-ion batteries in electric vehicles. Although the cost of electric vehicle batteries has been reduced by 70% from 2008 to 2015, the current battery pack cost (268/kWh in 2015) is still >2 times what the USABC targets (125/kWh). Even though many advancements in cell chemistry have been realized since the lithium-ion battery was first commercialized in 1991, few major breakthroughs have occurred in the past decade. Therefore, future cost reduction will rely on cell manufacturing and broader market acceptance. This article discusses three major aspects for cost reduction: (1) quality control to minimize scrap rate in cell manufacturing; (2) novel electrode processing and engineering to reduce processing cost and increase energy density and throughputs; and (3) material development and optimization for lithium-ion batteries with high-energy density. Insights on increasing energy and power densities of lithium-ion batteries are also addressed.

Properties of matter at ultra-high densities

International Nuclear Information System (INIS)

Banerjee, B.; Chitre, S.M.

1975-01-01

The recent discovery of pulsars and their subsequent identification with neutron stars has given a great impetus to the study of the behaviour of matter at ultra high densities. The object of these studies is to calculate the equation of state as a function of density. In this paper, the properties of electrically neutral, cold (T=0) matter at unusually high densities has been reviewed. The physics of the equation of state of such matter divides quite naturally in four density ranges. (i) At the very lowest densities the state of minimum energy is a lattice of 56 Fe atoms. This state persists upto 10 7 g/cm 3 . (ii) In the next density region the nuclei at the lattice sites become neutron rich because the high electron Fermi energy makes inverse beta decay possible. (iii) At a density 4.3 x 10 11 the nuclei become so neutron rich that the neutrons start 'dripping' out of the nuclei and form a gas. This density range is characterised by large, neutron-rich nuclei immersed in a neutron gas. (iv) At a density 2.4 x 10 14 g/cm 3 , the nuclei disappear and a fluid of uniform neutron matter with a small percentage of protons and electrons results. The above four density ranges have been discussed in detail as the equation of state is now well established upto the nuclear density 3 x 10 14 g/cm 3 . The problems of extending the equation of state beyond this density are also touched upon. (author)

Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

KAUST Repository

Zong, Baoyu; Goh, J. Y.; Guo, Zaibing; Luo, Ping; Wang, Chenchen; Qiu, Jinjun; Ho, Pin; Chen, Yunjie; Zhang, Mingsheng; Han, Guchang

2013-01-01

A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half

Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

International Nuclear Information System (INIS)

Yeo, Yee Ngee; Wang Yingqian; Samanta, Santanu Kumar; Yoo, Won Jong; Samudra, Ganesh; Gao, Dongyue; Chong, Chee Ching

2006-01-01

We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, resulting in the Silicon-Oxide-High κ-Oxide-Silicon (SOHOS) structure. The trap energy levels of the bulk electron traps in high κ material were determined. The programming and erasing voltage and time using Fowler Nordheim tunneling were estimated by simulation. The effect of deep level traps on erasing was investigated. Also, the effect of bulk traps density, thickness of block oxide and thickness of high κ material on the threshold voltage of the device was simulated

Declarative memory performance is associated with the number of sleep spindles in elderly women.

Science.gov (United States)

Seeck-Hirschner, Mareen; Baier, Paul Christian; Weinhold, Sara Lena; Dittmar, Manuela; Heiermann, Steffanie; Aldenhoff, Josef B; Göder, Robert

2012-09-01

Recent evidence suggests that the sleep-dependent consolidation of declarative memory relies on the nonrapid eye movement rather than the rapid eye movement phase of sleep. In addition, it is known that aging is accompanied by changes in sleep and memory processes. Hence, the purpose of this study was to investigate the overnight consolidation of declarative memory in healthy elderly women. Sleep laboratory of University. Nineteen healthy elderly women (age range: 61-74 years). We used laboratory-based measures of sleep. To test declarative memory, the Rey-Osterrieth Complex Figure Test was performed. Declarative memory performance in elderly women was associated with Stage 2 sleep spindle density. Women characterized by high memory performance exhibited significantly higher numbers of sleep spindles and higher spindle density compared with women with generally low memory performance. The data strongly support theories suggesting a link between sleep spindle activity and declarative memory consolidation.

High-density carbon ablator ignition path with low-density gas-filled rugby hohlraum

International Nuclear Information System (INIS)

Amendt, Peter; Ho, Darwin D.; Jones, Ogden S.

2015-01-01

A recent low gas-fill density (0.6 mg/cc 4 He) cylindrical hohlraum experiment on the National Ignition Facility has shown high laser-coupling efficiency (>96%), reduced phenomenological laser drive corrections, and improved high-density carbon capsule implosion symmetry [Jones et al., Bull. Am. Phys. Soc. 59(15), 66 (2014)]. In this Letter, an ignition design using a large rugby-shaped hohlraum [Amendt et al., Phys. Plasmas 21, 112703 (2014)] for high energetics efficiency and symmetry control with the same low gas-fill density (0.6 mg/cc 4 He) is developed as a potentially robust platform for demonstrating thermonuclear burn. The companion high-density carbon capsule for this hohlraum design is driven by an adiabat-shaped [Betti et al., Phys. Plasmas 9, 2277 (2002)] 4-shock drive profile for robust high gain (>10) 1-D ignition performance and large margin to 2-D perturbation growth

High-density carbon ablator ignition path with low-density gas-filled rugby hohlraum

Science.gov (United States)

Amendt, Peter; Ho, Darwin D.; Jones, Ogden S.

2015-04-01

A recent low gas-fill density (0.6 mg/cc 4He) cylindrical hohlraum experiment on the National Ignition Facility has shown high laser-coupling efficiency (>96%), reduced phenomenological laser drive corrections, and improved high-density carbon capsule implosion symmetry [Jones et al., Bull. Am. Phys. Soc. 59(15), 66 (2014)]. In this Letter, an ignition design using a large rugby-shaped hohlraum [Amendt et al., Phys. Plasmas 21, 112703 (2014)] for high energetics efficiency and symmetry control with the same low gas-fill density (0.6 mg/cc 4He) is developed as a potentially robust platform for demonstrating thermonuclear burn. The companion high-density carbon capsule for this hohlraum design is driven by an adiabat-shaped [Betti et al., Phys. Plasmas 9, 2277 (2002)] 4-shock drive profile for robust high gain (>10) 1-D ignition performance and large margin to 2-D perturbation growth.

High-density carbon ablator ignition path with low-density gas-filled rugby hohlraum

Energy Technology Data Exchange (ETDEWEB)

Amendt, Peter; Ho, Darwin D.; Jones, Ogden S. [Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)

2015-04-15

A recent low gas-fill density (0.6 mg/cc {sup 4}He) cylindrical hohlraum experiment on the National Ignition Facility has shown high laser-coupling efficiency (>96%), reduced phenomenological laser drive corrections, and improved high-density carbon capsule implosion symmetry [Jones et al., Bull. Am. Phys. Soc. 59(15), 66 (2014)]. In this Letter, an ignition design using a large rugby-shaped hohlraum [Amendt et al., Phys. Plasmas 21, 112703 (2014)] for high energetics efficiency and symmetry control with the same low gas-fill density (0.6 mg/cc {sup 4}He) is developed as a potentially robust platform for demonstrating thermonuclear burn. The companion high-density carbon capsule for this hohlraum design is driven by an adiabat-shaped [Betti et al., Phys. Plasmas 9, 2277 (2002)] 4-shock drive profile for robust high gain (>10) 1-D ignition performance and large margin to 2-D perturbation growth.

Alignment of high-throughput sequencing data inside in-memory databases.

Science.gov (United States)

Firnkorn, Daniel; Knaup-Gregori, Petra; Lorenzo Bermejo, Justo; Ganzinger, Matthias

2014-01-01

In times of high-throughput DNA sequencing techniques, performance-capable analysis of DNA sequences is of high importance. Computer supported DNA analysis is still an intensive time-consuming task. In this paper we explore the potential of a new In-Memory database technology by using SAP's High Performance Analytic Appliance (HANA). We focus on read alignment as one of the first steps in DNA sequence analysis. In particular, we examined the widely used Burrows-Wheeler Aligner (BWA) and implemented stored procedures in both, HANA and the free database system MySQL, to compare execution time and memory management. To ensure that the results are comparable, MySQL has been running in memory as well, utilizing its integrated memory engine for database table creation. We implemented stored procedures, containing exact and inexact searching of DNA reads within the reference genome GRCh37. Due to technical restrictions in SAP HANA concerning recursion, the inexact matching problem could not be implemented on this platform. Hence, performance analysis between HANA and MySQL was made by comparing the execution time of the exact search procedures. Here, HANA was approximately 27 times faster than MySQL which means, that there is a high potential within the new In-Memory concepts, leading to further developments of DNA analysis procedures in the future.

Photoionization and High Density Gas

Science.gov (United States)

Kallman, T.; Bautista, M.; White, Nicholas E. (Technical Monitor)

2002-01-01

We present results of calculations using the XSTAR version 2 computer code. This code is loosely based on the XSTAR v.1 code which has been available for public use for some time. However it represents an improvement and update in several major respects, including atomic data, code structure, user interface, and improved physical description of ionization/excitation. In particular, it now is applicable to high density situations in which significant excited atomic level populations are likely to occur. We describe the computational techniques and assumptions, and present sample runs with particular emphasis on high density situations.

Electronic DC transformer with high power density

NARCIS (Netherlands)

Pavlovský, M.

2006-01-01

This thesis is concerned with the possibilities of increasing the power density of high-power dc-dc converters with galvanic isolation. Three cornerstones for reaching high power densities are identified as: size reduction of passive components, reduction of losses particularly in active components

Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells.

Science.gov (United States)

Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir

2012-03-14

Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. © 2012 American Chemical Society

Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

International Nuclear Information System (INIS)

Cho, Ikjun; Cho, Jinhan; Kim, Beom Joon; Cho, Jeong Ho; Ryu, Sook Won

2014-01-01

Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au NPs ) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au NP ) n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO 2 gate dielectric layer. For a single Au NP layer (i.e. PAD/TOA-Au NP ) 1 ) with a number density of 1.82 × 10 12 cm −2 , the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au NP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔV th ) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 10 6 ) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate. (paper)

Spontaneous magnetization in high-density quark matter

DEFF Research Database (Denmark)

Tsue, Yasuhiko; da Providência, João; Providência, Constanca

2015-01-01

It is shown that spontaneous magnetization occurs due to the anomalous magnetic moments of quarks in high-density quark matter under the tensor-type four-point interaction. The spin polarized condensate for each flavor of quark appears at high baryon density, which leads to the spontaneous magnet...

High Energy Density Sciences with High Power Lasers at SACLA

Science.gov (United States)

Kodama, Ryosuke

2013-10-01

One of the interesting topics on high energy density sciences with high power lasers is creation of extremely high pressures in material. The pressures of more than 0.1 TPa are the energy density corresponding to the chemical bonding energy, resulting in expectation of dramatic changes in the chemical reactions. At pressures of more than TPa, most of material would be melted on the shock Hugoniot curve. However, if the temperature is less than 1eV or lower than a melting point at pressures of more than TPa, novel solid states of matter must be created through a pressured phase transition. One of the interesting materials must be carbon. At pressures of more than TPa, the diamond structure changes to BC and cubic at more than 3TPa. To create such novel states of matter, several kinds of isentropic-like compression techniques are being developed with high power lasers. To explore the ``Tera-Pascal Science,'' now we have a new tool which is an x-ray free electron laser as well as high power lasers. The XFEL will clear the details of the HED states and also efficiently create hot dense matter. We have started a new project on high energy density sciences using an XFEL (SACLA) in Japan, which is a HERMES (High Energy density Revolution of Matter in Extreme States) project.

A Cognitive Assessment of Highly Superior Autobiographical Memory

Science.gov (United States)

LePort, Aurora K.R.; Stark, Shauna M.; McGaugh, James L.; Stark, Craig E.L.

2017-01-01

Highly Superior Autobiographical Memory (HSAM) is characterized as the ability to accurately recall an exceptional number of experiences and their associated dates from events occurring throughout much of one’s lifetime. The source of this ability has only begun to be explored. The present study explores whether other enhanced cognitive processes may be critical influences underlying HSAM abilities. We investigated whether enhanced abilities in the domains of verbal fluency, attention/inhibition, executive functioning, mnemonic discrimination, perception, visual working memory, or the processing of and memory for emotional details might contribute critically to HSAM. The results suggest that superior cognitive functioning is an unlikely basis of HSAM, as only modest advantages were found in only a few tests. In addition, we examined HSAM subjects’ memory of the testing episodes. Interestingly, HSAM participants recalled details of their own experiences far better than those experiences that the experimenter shared with them. These findings provide additional evidence that HSAM involves, relatively selectively, recollection of personal, autobiographical material. PMID:26982996

A cognitive assessment of highly superior autobiographical memory.

Science.gov (United States)

LePort, Aurora K R; Stark, Shauna M; McGaugh, James L; Stark, Craig E L

2017-02-01

Highly Superior Autobiographical Memory (HSAM) is characterised as the ability to accurately recall an exceptional number of experiences and their associated dates from events occurring throughout much of one's lifetime. The source of this ability has only begun to be explored. The present study explores whether other enhanced cognitive processes may be critical influences underlying HSAM abilities. We investigated whether enhanced abilities in the domains of verbal fluency, attention/inhibition, executive functioning, mnemonic discrimination, perception, visual working memory, or the processing of and memory for emotional details might contribute critically to HSAM. The results suggest that superior cognitive functioning is an unlikely basis of HSAM, as only modest advantages were found in only a few tests. In addition, we examined HSAM subjects' memory of the testing episodes. Interestingly, HSAM participants recalled details of their own experiences far better than those experiences that the experimenter shared with them. These findings provide additional evidence that HSAM involves, relatively selectively, recollection of personal, autobiographical material.

A bootstrap invariance principle for highly nonstationary long memory processes

OpenAIRE

Kapetanios, George

2004-01-01

This paper presents an invariance principle for highly nonstationary long memory processes, defined as processes with long memory parameter lying in (1, 1.5). This principle provides the tools for showing asymptotic validity of the bootstrap in the context of such processes.

The high density and high βpol disruption mechanism on TFTR

International Nuclear Information System (INIS)

Fredrickson, E.D.; Manickam, J.; McGuire, K.M.; Monticello, D.; Nagayama, Y.; Park, W.; Taylor, G.

1992-01-01

Studies of disruptions on TFTR have been extended to include high density disruptions as well as the high β pol disruptions. The data strongly suggests that the (m,n)=(1,1) mode plays an important role in both types of disruptions. Further, for the first time, it is unambiguously shown, using a fast electron cyclotron emission (ECE) instrument for the electron temperature profile measurements, that the (m,n)=(1,1) precursor to the high density disruptions has a 'cold bubble' structure. The precursor to the major disruption at high density resembles the 'vacuum bubble' model of disruptions first proposed by Kadomtsev and Pogutse. (author) 2 refs., 2 figs

Scientific developments of liquid crystal-based optical memory: a review

Science.gov (United States)

Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

Electrode/Dielectric Strip For High-Energy-Density Capacitor

Science.gov (United States)

Yen, Shiao-Ping S.

1994-01-01

Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

Recall of false memories in individuals scoring high in schizotypy: memory distortions are scale specific.

Science.gov (United States)

Saunders, Jo; Randell, Jordan; Reed, Phil

2012-06-01

Previous research has indicated abnormal semantic activation in individuals scoring higher in schizotypy. In the current experiment, semantic activation was examined by using the Deese-Roediger-McDermott paradigm of false memories. Participants were assessed for schizotypy using the Oxford-Liverpool Inventory of Feelings (OLIFE). Participants studied lists of semantically related words in which a critical and highly associated word was absent. Participants then recalled the list. Participants high in Unusual Experiences and Cognitive Disorganization recalled more critical non-presented words, weakly related studied words, and fewer studied words than participants who scored low on these measures. Previous research using the cognitive-perceptual factor of the Schizotypy Personality Questionnaire found reduced false memories, while the Unusual Experiences subscale of the OLIFE was associated with more false memories. Both scales cover similar unusual perceptual experiences and it is unclear why they led to divergent results. The findings suggest that subtypes of schizotypy are associated with abnormal semantic activation. Copyright © 2011 Elsevier Ltd. All rights reserved.

An obesogenic bias in women's spatial memory for high calorie snack food.

Science.gov (United States)

Allan, K; Allan, J L

2013-08-01

To help maintain a positive energy balance in ancestral human habitats, evolution appears to have designed a functional bias in spatial memory that enhances our ability to remember the location of high-calorie foodstuffs. Here, we investigated whether this functional bias has obesogenic consequences for individuals living in a modern urban environment. Spatial memory, dietary intentions, and perceived desirability, for high-calorie snacks and lower-calorie fruits and vegetables were measured using a computer-based task in 41 women (age: 18-35, body mass index: 18.5-30.0). Using multiple linear regression, we analyzed whether enhanced spatial memory for high-calorie snacks versus fruits and vegetables predicted BMI, controlling for dietary intention strength and perceived food desirability. We observed that enhanced spatial memory for high-calorie snacks (both independently, and relative to that for fruits and vegetables), significantly predicted higher BMI. The evolved function of high-calorie bias in human spatial memory, to promote positive energy balance, would therefore appear to be intact. But our data reveal that this function may contribute to higher, less healthy BMI in individuals in whom the memory bias is most marked. Our findings reveal a novel cognitive marker of vulnerability to weight gain that, once the proximal mechanisms are understood, may offer new possibilities for weight control interventions. Copyright © 2013 Elsevier Ltd. All rights reserved.

Laser fusion and high energy density science

International Nuclear Information System (INIS)

Kodama, Ryosuke

2005-01-01

High-power laser technology is now opening a variety of new fields of science and technology using laser-produced plasmas. The laser plasma is now recognized as one of the important tools for the investigation and application of matter under extreme conditions, which is called high energy density science. This chapter shows a variety of applications of laser-produced plasmas as high energy density science. One of the more attractive industrial and science applications is the generation of intense pulse-radiation sources, such as the generation of electro-magnetic waves in the ranges of EUV (Extreme Ultra Violet) to gamma rays and laser acceleration of charged particles. The laser plasma is used as an energy converter in this regime. The fundamental science applications of high energy density physics are shown by introducing laboratory astrophysics, the equation of state of high pressure matter, including warm dense matter and nuclear science. Other applications are also presented, such as femto-second laser propulsion and light guiding. Finally, a new systematization is proposed to explore the possibility of the high energy density plasma application, which is called high energy plasma photonics''. This is also exploration of the boundary regions between laser technology and beam optics based on plasma physics. (author)

Space Qualified, Radiation Hardened, Dense Monolithic Flash Memory, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Radiation hardened nonvolatile memories for space is still primarily confined to EEPROM. There is high density effective or cost effective NVM solution available to...

Operation and control of high density tokamak reactors

International Nuclear Information System (INIS)

Attenberger, S.E.; McAlees, D.G.

1976-01-01

The incentive for high density operation of a tokamak reactor was discussed. It is found that high density permits ignition in a relatively small, moderately elongated plasma with a moderate magnetic field strength. Under these conditions, neutron wall loadings approximately 4 MW/m 2 must be tolerated. The sensitivity analysis with respect to impurity effects shows that impurity control will most likely be necessary to achieve the desired plasma conditions. The charge exchange sputtered impurities are found to have an important effect so that maintaining a low neutral density in the plasma is critical. If it is assumed that neutral beams will be used to heat the plasma to ignition, high energy injection is required (approximately 250 keV) when heating is accompished at full density. A scenario is outlined where the ignition temperature is established at low density and then the fueling rate is increased to attain ignition. This approach may permit beams with energies being developed for use in TFTR to be successfully used to heat a high density device of the type described here to ignition

High density high-TC ceramic superconductors by hot pressing

International Nuclear Information System (INIS)

Mak, S.; Chaklader, A.C.D.

1989-01-01

High density and high T C superconductor specimens, YBa 2 Cu 3 O x , have been produced by hot-pressing. The factors studied are the effect of hot pressing on the density, the oxygen stoichiometry, the crystal structure, and the critical temperature. Hot pressing followed by heat treatment increased the density of the specimen to 93%. The hot pressing itself did not significantly affect the oxygen content in the specimen, and although the crystal structure appeared to be orthorhombic, the specimens were not superconducting above liquid nitrogen temperature. The superconductivity was restored after head treatment in oxygen. The highest critical temperature (T C ) of the hot pressed pellets was 82K, which was slightly lower than the T C that could be obtained with the cold pressed/sintered pellets. (6 refs., 5 figs., tab.)

Selectivity in Postencoding Connectivity with High-Level Visual Cortex Is Associated with Reward-Motivated Memory.

Science.gov (United States)

Murty, Vishnu P; Tompary, Alexa; Adcock, R Alison; Davachi, Lila

2017-01-18

Reward motivation has been demonstrated to enhance declarative memory by facilitating systems-level consolidation. Although high-reward information is often intermixed with lower reward information during an experience, memory for high value information is prioritized. How is this selectivity achieved? One possibility is that postencoding consolidation processes bias memory strengthening to those representations associated with higher reward. To test this hypothesis, we investigated the influence of differential reward motivation on the selectivity of postencoding markers of systems-level memory consolidation. Human participants encoded intermixed, trial-unique memoranda that were associated with either high or low-value during fMRI acquisition. Encoding was interleaved with periods of rest, allowing us to investigate experience-dependent changes in connectivity as they related to later memory. Behaviorally, we found that reward motivation enhanced 24 h associative memory. Analysis of patterns of postencoding connectivity showed that, even though learning trials were intermixed, there was significantly greater connectivity with regions of high-level, category-selective visual cortex associated with high-reward trials. Specifically, increased connectivity of category-selective visual cortex with both the VTA and the anterior hippocampus predicted associative memory for high- but not low-reward memories. Critically, these results were independent of encoding-related connectivity and univariate activity measures. Thus, these findings support a model by which the selective stabilization of memories for salient events is supported by postencoding interactions with sensory cortex associated with reward. Reward motivation is thought to promote memory by supporting memory consolidation. Yet, little is known as to how brain selects relevant information for subsequent consolidation based on reward. We show that experience-dependent changes in connectivity of both the

Beyond the magic number four: Remapping high-capacity, pre-attentive, fragile working memory

NARCIS (Netherlands)

Zerr, P.; Gayet, S.; Mulder, K.T.; Sligte, I.G.; Stigchel, S. van der

2017-01-01

Visual short term memory allows us to access visual information after termination of its retinal input. Generally, a distinction is made between a robust, capacity-limited form (working memory, WM) and high-capacity, pre-attentive, maskable forms (sensory memory, e.g. fragile memory, FM). Eye

Effect of Cross-linking Density on Creep and Recovery Behavior in Epoxy-Based Shape Memory Polymers (SMEPs) for Structural Applications

Science.gov (United States)

Rao, Kavitha V.; Ananthapadmanabha, G. S.; Dayananda, G. N.

2016-12-01

Epoxy-based shape memory polymers (SMEPs) are gaining importance in the area of aerospace structures due to their high strength and stiffness which is a primary requirement for an SMEP in structural applications. The understanding of viscoelastic behavior of SMEPs is very essential to assess their shape memory effect. In the present work, three types of SMEPs with varying cross-linking densities were developed by curing an aromatic epoxy resin with aliphatic amines. Glass transition temperature ( T g) was measured for these SMEPs using advanced rheometric expansion system, and from the T g measurements, a range of temperatures from glassy to rubbery regimes were chosen. At selected temperatures, creep-recovery tests were performed in order to evaluate the viscoelastic behavior of SMEPs and also to investigate the effect of temperature on creep-recovery. Further, a three-parameter viscoelastic model (Zener) was used to fit the data obtained from experiments. Model parameters like moduli of the springs and viscosity of the dashpot were evaluated by curve fitting. Results revealed that Zener model was well suited to describe the viscoelastic behavior of SMEPs as a function of test temperatures.

Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

International Nuclear Information System (INIS)

Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

2007-01-01

The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

Feedback controlled, reactor relevant, high-density, high-confinement scenarios at ASDEX Upgrade

Science.gov (United States)

Lang, P. T.; Blanken, T. C.; Dunne, M.; McDermott, R. M.; Wolfrum, E.; Bobkov, V.; Felici, F.; Fischer, R.; Janky, F.; Kallenbach, A.; Kardaun, O.; Kudlacek, O.; Mertens, V.; Mlynek, A.; Ploeckl, B.; Stober, J. K.; Treutterer, W.; Zohm, H.; ASDEX Upgrade Team

2018-03-01

One main programme topic at the ASDEX Upgrade all-metal-wall tokamak is development of a high-density regime with central densities at reactor grade level while retaining high-confinement properties. This required development of appropriate control techniques capable of coping with the pellet tool, a powerful means of fuelling but one which presented challenges to the control system for handling of related perturbations. Real-time density profile control was demonstrated, raising the core density well above the Greenwald density while retaining the edge density in order to avoid confinement losses. Recently, a new model-based approach was implemented that allows direct control of the central density. Investigations focussed first on the N-seeding scenario owing to its proven potential to yield confinement enhancements. Combining pellets and N seeding was found to improve the divertor buffering further and enhance the operational range accessible. For core densities up to about the Greenwald density, a clear improvement with respect to the non-seeding reference was achieved; however, at higher densities this benefit is reduced. This behaviour is attributed to recurrence of an outward shift of the edge density profile, resulting in a reduced peeling-ballooning stability. This is similar to the shift seen during strong gas puffing, which is required to prevent impurity influx in ASDEX Upgrade. First tests indicate that highly-shaped plasma configurations like the ITER base-line scenario, respond very well to pellet injection, showing efficient fuelling with no measurable impact on the edge density profile.

The hard fall effect: high working memory capacity leads to a higher, but less robust short-term memory performance.

Science.gov (United States)

Thomassin, Noémylle; Gonthier, Corentin; Guerraz, Michel; Roulin, Jean-Luc

2015-01-01

Participants with a high working memory span tend to perform better than low spans in a variety of tasks. However, their performance is paradoxically more impaired when they have to perform two tasks at once, a phenomenon that could be labeled the "hard fall effect." The present study tested whether this effect exists in a short-term memory task, and investigated the proposal that the effect is due to high spans using efficient facilitative strategies under simple task conditions. Ninety-eight participants performed a spatial short-term memory task under simple and dual task conditions; stimuli presentation times either allowed for the use of complex facilitative strategies or not. High spans outperformed low spans only under simple task conditions when presentation times allowed for the use of facilitative strategies. These results indicate that the hard fall effect exists on a short-term memory task and may be caused by individual differences in strategy use.

High Density Digital Data Storage System

Science.gov (United States)

Wright, Kenneth D., II; Gray, David L.; Rowland, Wayne D.

1991-01-01

The High Density Digital Data Storage System was designed to provide a cost effective means for storing real-time data from the field-deployable digital acoustic measurement system. However, the high density data storage system is a standalone system that could provide a storage solution for many other real time data acquisition applications. The storage system has inputs for up to 20 channels of 16-bit digital data. The high density tape recorders presently being used in the storage system are capable of storing over 5 gigabytes of data at overall transfer rates of 500 kilobytes per second. However, through the use of data compression techniques the system storage capacity and transfer rate can be doubled. Two tape recorders have been incorporated into the storage system to produce a backup tape of data in real-time. An analog output is provided for each data channel as a means of monitoring the data as it is being recorded.

High-performance non-volatile organic ferroelectric memory on banknotes

KAUST Repository

Khan, Yasser; Bhansali, Unnat Sampatraj; Alshareef, Husam N.

2012-01-01

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage

Working Memory Load and Reminder Effect on Event-Based Prospective Memory of High- and Low-Achieving Students in Math

Science.gov (United States)

Chen, Youzhen; Lian, Rong; Yang, Lixian; Liu, Jianrong; Meng, Yingfang

2017-01-01

The effects of working memory (WM) demand and reminders on an event-based prospective memory (PM) task were compared between students with low and high achievement in math. WM load (1- and 2-back tasks) was manipulated as a within-subject factor and reminder (with or without reminder) as a between-subject factor. Results showed that high-achieving…

Effects of high-fat diet exposure on learning & memory.

Science.gov (United States)

Cordner, Zachary A; Tamashiro, Kellie L K

2015-12-01

The associations between consumption of a high-fat or 'Western' diet and metabolic disorders such as obesity, diabetes, and cardiovascular disease have long been recognized and a great deal of evidence now suggests that diets high in fat can also have a profound impact on the brain, behavior, and cognition. Here, we will review the techniques most often used to assess learning and memory in rodent models and discuss findings from studies assessing the cognitive effects of high-fat diet consumption. The review will then consider potential underlying mechanisms in the brain and conclude by reviewing emerging literature suggesting that maternal consumption of a high-fat diet may have effects on the learning and memory of offspring. Copyright © 2015 Elsevier Inc. All rights reserved.

Ultra Low Density Shape Memory Polymer Foams With Tunable Physicochemical Properties for Treatment of intracranial Aneurysms

Energy Technology Data Exchange (ETDEWEB)

Singhal, Pooja [Texas A & M Univ., College Station, TX (United States)

2013-12-01

Shape memory polymers (SMPs) are a rapidly emerging class of smart materials that can be stored in a deformed temporary shape, and can actively return to their original shape upon application of an external stimulus such as heat, pH or light. This behavior is particularly advantageous for minimally invasive biomedical applications comprising embolic/regenerative scaffolds, as it enables a transcatheter delivery of the device to the target site. The focus of this work was to exploit this shape memory behavior of polyurethanes, and develop an efficient embolic SMP foam device for the treatment of intracranial aneurysms.In summary, this work reports a novel family of ultra low density polymer foams which can be delivered via a minimally invasive surgery to the aneurysm site, actuated in a controlled manner to efficiently embolize the aneurysm while promoting physiological fluid/blood flow through the reticulated/open porous structure, and eventually biodegrade leading to complete healing of the vasculature.

High-density-plasma diagnostics in magnetic-confinement fusion

International Nuclear Information System (INIS)

Jahoda, F.C.

1982-01-01

The lectures will begin by defining high density in the context of magnetic confinement fusion research and listing some alternative reactor concepts, ranging from n/sub e/ approx. 2 x 10 14 cm -3 to several orders of magnitude greater, that offer potential advantages over the main-line, n/sub e/ approx. 1 x 10 14 cm -3 , Tokamak reactor designs. The high density scalings of several major diagnostic techniques, some favorable and some disadvantageous, will be discussed. Special emphasis will be given to interferometric methods, both electronic and photographic, for which integral n/sub e/dl measurements and associated techniques are accessible with low wavelength lasers. Reactor relevant experience from higher density, smaller dimension devices exists. High density implies high β, which implies economies of scale. The specialized features of high β diagnostics will be discussed

High-Temperature Shape Memory Polymers

Science.gov (United States)

Yoonessi, Mitra; Weiss, Robert A.

2012-01-01

physical conformation changes when exposed to an external stimulus, such as a change in temperature. Such materials have a permanent shape, but can be reshaped above a critical temperature and fixed into a temporary shape when cooled under stress to below the critical temperature. When reheated above the critical temperature (Tc, also sometimes called the triggering or switching temperature), the materials revert to the permanent shape. The current innovation involves a chemically treated (sulfonated, carboxylated, phosphonated, or other polar function group), high-temperature, semicrystalline thermoplastic poly(ether ether ketone) (Tg .140 C, Tm = 340 C) mix containing organometallic complexes (Zn++, Li+, or other metal, ammonium, or phosphonium salts), or high-temperature ionic liquids (e.g. hexafluorosilicate salt with 1-propyl-3- methyl imidazolium, Tm = 210 C) to form a network where dipolar or ionic interactions between the polymer and the low-molecular-weight or inorganic compound forms a complex that provides a physical crosslink. Hereafter, these compounds will be referred to as "additives". The polymer is semicrystalline, and the high-melt-point crystals provide a temporary crosslink that acts as a permanent crosslink just so long as the melting temperature is not exceeded. In this example case, the melting point is .340 C, and the shape memory critical temperature is between 150 and 250 C. PEEK is an engineering thermoplastic with a high Young fs modulus, nominally 3.6 GPa. An important aspect of the invention is the control of the PEEK functionalization (in this example, the sulfonation degree), and the thermal properties (i.e. melting point) of the additive, which determines the switching temperature. Because the compound is thermoplastic, it can be formed into the "permanent" shape by conventional plastics processing operations. In addition, the compound may be covalently cross - linked after forming the permanent shape by S-PEEK by applying ionizing

Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

Science.gov (United States)

Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

2013-01-01

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

A graphene integrated highly transparent resistive switching memory device

Science.gov (United States)

Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

2018-05-01

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

Probing topological relations between high-density and low-density regions of 2MASS with hexagon cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Yongfeng [American Physical Society, San Diego, CA (United States); Xiao, Weike, E-mail: yongfeng.wu@maine.edu [Department of Astronautics Engineering, Harbin Institute of Technology, P.O. Box 345, Heilongjiang Province 150001 (China)

2014-02-01

We introduced a new two-dimensional (2D) hexagon technique for probing the topological structure of the universe in which we mapped regions of the sky with high and low galaxy densities onto a 2D lattice of hexagonal unit cells. We defined filled cells as corresponding to high-density regions and empty cells as corresponding to low-density regions. The numbers of filled cells and empty cells were kept the same by controlling the size of the cells. By analyzing the six sides of each hexagon, we could obtain and compare the statistical topological properties of high-density and low-density regions of the universe in order to have a better understanding of the evolution of the universe. We applied this hexagonal method to Two Micron All Sky Survey data and discovered significant topological differences between the high-density and low-density regions. Both regions had significant (>5σ) topological shifts from both the binomial distribution and the random distribution.

Spiers Memorial Lecture. Molecular mechanics and molecular electronics.

Science.gov (United States)

Beckman, Robert; Beverly, Kris; Boukai, Akram; Bunimovich, Yuri; Choi, Jang Wook; DeIonno, Erica; Green, Johnny; Johnston-Halperin, Ezekiel; Luo, Yi; Sheriff, Bonnie; Stoddart, Fraser; Heath, James R

2006-01-01

We describe our research into building integrated molecular electronics circuitry for a diverse set of functions, and with a focus on the fundamental scientific issues that surround this project. In particular, we discuss experiments aimed at understanding the function of bistable rotaxane molecular electronic switches by correlating the switching kinetics and ground state thermodynamic properties of those switches in various environments, ranging from the solution phase to a Langmuir monolayer of the switching molecules sandwiched between two electrodes. We discuss various devices, low bit-density memory circuits, and ultra-high density memory circuits that utilize the electrochemical switching characteristics of these molecules in conjunction with novel patterning methods. We also discuss interconnect schemes that are capable of bridging the micrometre to submicrometre length scales of conventional patterning approaches to the near-molecular length scales of the ultra-dense memory circuits. Finally, we discuss some of the challenges associated with fabricated ultra-dense molecular electronic integrated circuits.

High intraocular pressure produces learning and memory impairments in rats.

Science.gov (United States)

Yuan, Yuxiang; Chen, Zhiqi; Li, Lu; Li, Xing; Xia, Qian; Zhang, Hong; Duan, Qiming; Zhao, Yin

2017-11-15

Primary open angle glaucoma (POAG) is a leading cause of irreversible blindness worldwide. Previous MRI studies have revealed that POAG can be associated with alterations in hippocampal function. Thus, the aim of this study was to investigate a relationship between chronic high intraocular pressure (IOP) and hippocampal changes in a rat model. We used behavioural tests to assess learning and memory ability, and additionally investigated the hippocampal expression of pathological amyloid beta (Aβ), phospho-tau, and related pathway proteins. Chronic high IOP impaired learning and memory in rats and concurrently increased Aβ and phospho-tau expression in the hippocampus by altering the activation of different kinase (GSK-3β, BACE1) and phosphatase (PP2A) proteins in the hippocampus. This study provides novel evidence for the relationship between high IOP and hippocampal alterations, especially in the context of learning and memory. Copyright © 2017 Elsevier B.V. All rights reserved.

Memory effects in microscopic traffic models and wide scattering in flow-density data

Science.gov (United States)

Treiber, Martin; Helbing, Dirk

2003-10-01

By means of microscopic simulations we show that noninstantaneous adaptation of the driving behavior to the traffic situation together with the conventional method to measure flow-density data provides a possible explanation for the observed inverse-λ shape and the wide scattering of flow-density data in “synchronized” congested traffic. We model a memory effect in the response of drivers to the traffic situation for a wide class of car-following models by introducing an additional dynamical variable (the “subjective level of service”) describing the adaptation of drivers to the surrounding traffic situation during the past few minutes and couple this internal state to parameters of the underlying model that are related to the driving style. For illustration, we use the intelligent-driver model (IDM) as the underlying model, characterize the level of service solely by the velocity, and couple the internal variable to the IDM parameter “time gap” to model an increase of the time gap in congested traffic (“frustration effect”), which is supported by single-vehicle data. We simulate open systems with a bottleneck and obtain flow-density data by implementing “virtual detectors.” The shape, relative size, and apparent “stochasticity” of the region of the scattered data points agree nearly quantitatively with empirical data. Wide scattering is even observed for identical vehicles, although the proposed model is a time-continuous, deterministic, single-lane car-following model with a unique fundamental diagram.

Towards high-density matter with relativistic heavy-ion collisions

International Nuclear Information System (INIS)

Nagamiya, Shoji.

1990-04-01

Recent progress in nucleus-nucleus collisions at BNL and CERN suggests a hint that the formation of high-density nuclear matter could be possible with relativistic heavy-ion beams. What is the maximum density that can be achieved by heavy-ion collisions? Are there data which show evidence or hints on the formation of high density matter? Why is the research of high-density interesting? How about the future possibilities on this subject? These points are discussed. (author)

New aspects of high energy density plasma

International Nuclear Information System (INIS)

Hotta, Eiki

2005-10-01

The papers presented at the symposium on 'New aspects of high energy density plasma' held at National Institute for Fusion Science are collected in this proceedings. The papers reflect the present status and recent progress in the experiments and theoretical works on high energy density plasma produced by pulsed power technology. The 13 of the presented papers are indexed individually. (J.P.N.)

High sucrose consumption induces memory impairment in rats associated with electrophysiological modifications but not with metabolic changes in the hippocampus.

Science.gov (United States)

Lemos, C; Rial, D; Gonçalves, F Q; Pires, J; Silva, H B; Matheus, F C; da Silva, A C; Marques, J M; Rodrigues, R J; Jarak, I; Prediger, R D; Reis, F; Carvalho, R A; Pereira, F C; Cunha, R A

2016-02-19

High sugar consumption is a risk factor for metabolic disturbances leading to memory impairment. Thus, rats subject to high sucrose intake (HSu) develop a metabolic syndrome and display memory deficits. We now investigated if these HSu-induced memory deficits were associated with metabolic and electrophysiological alterations in the hippocampus. Male Wistar rats were submitted for 9 weeks to a sucrose-rich diet (35% sucrose solution) and subsequently to a battery of behavioral tests; after sacrifice, their hippocampi were collected for ex vivo high-resolution magic angle spinning (HRMAS) metabolic characterization and electrophysiological extracellular recordings in slices. HSu rats displayed a decreased memory performance (object displacement and novel object recognition tasks) and helpless behavior (forced swimming test), without altered locomotion (open field). HRMAS analysis indicated a similar hippocampal metabolic profile of HSu and control rats. HSu rats also displayed no change of synaptic transmission and plasticity (long-term potentiation) in hippocampal Schaffer fibers-CA1 pyramid synapses, but had decreased amplitude of long-term depression in the temporoammonic (TA) pathway. Furthermore, HSu rats had an increased density of inhibitory adenosine A1 receptors (A1R), that translated into a greater potency of A1R in Schaffer fiber synapses, but not in the TA pathway, whereas the endogenous activation of A1R in HSu rats was preserved in the TA pathway but abolished in Schaffer fiber synapses. These results suggest that HSu triggers a hippocampal-dependent memory impairment that is not associated with altered hippocampal metabolism but is probably related to modified synaptic plasticity in hippocampal TA synapses. Copyright © 2015 IBRO. Published by Elsevier Ltd. All rights reserved.

Better target detection in the presence of collinear flankers under high working memory load

Directory of Open Access Journals (Sweden)

Jan W. De Fockert

2014-10-01

Full Text Available There are multiple ways in which working memory can influence selective attention. Aside from the content-specific effects of working memory on selective attention, whereby attention is more likely to be directed towards information that matches the contents of working memory, the mere level of load on working memory has also been shown to have an effect on selective attention. Specifically, high load on working memory is associated with increased processing of irrelevant information. In most demonstrations of the effect to-date, this has led to impaired target performance, leaving open the possibility that the effect partly reflects an increase in general task difficulty under high load. Here we show that working memory load can result in a performance gain when processing of distracting information aids target performance. The facilitation in the detection of a low-contrast Gabor stimulus in the presence of collinear flanking Gabors was greater when load on a concurrent working memory task was high, compared to low. This finding suggests that working memory can interact with selective attention at an early stage in visual processing.

Impact of multiplexed reading scheme on nanocrossbar memristor memory's scalability

International Nuclear Information System (INIS)

Zhu Xuan; Tang Yu-Hua; Wu Jun-Jie; Yi Xun; Wu Chun-Qing

2014-01-01

Nanocrossbar is a potential memory architecture to integrate memristor to achieve large scale and high density memory. However, based on the currently widely-adopted parallel reading scheme, scalability of the nanocrossbar memory is limited, since the overhead of the reading circuits is in proportion with the size of the nanocrossbar component. In this paper, a multiplexed reading scheme is adopted as the foundation of the discussion. Through HSPICE simulation, we reanalyze scalability of the nanocrossbar memristor memory by investigating the impact of various circuit parameters on the output voltage swing as the memory scales to larger size. We find that multiplexed reading maintains sufficient noise margin in large size nanocrossbar memristor memory. In order to improve the scalability of the memory, memristors with nonlinear I—V characteristics and high LRS (low resistive state) resistance should be adopted. (interdisciplinary physics and related areas of science and technology)

A Homogenized Free Energy Model for Hysteresis in Thin-film Shape Memory Alloys

National Research Council Canada - National Science Library

Massad, Jordan E; Smith, Ralph C

2004-01-01

Thin-film shape memory alloys (SMAs) have become excellent candidates for microactuator fabrication in MEMS due to their capability to achieve very high work densities, produce large deformations, and generate high stresses...

High Stakes Trigger the Use of Multiple Memories to Enhance the Control of Attention

Science.gov (United States)

Reinhart, Robert M.G.; Woodman, Geoffrey F.

2014-01-01

We can more precisely tune attention to highly rewarding objects than other objects in our environment, but how our brains do this is unknown. After a few trials of searching for the same object, subjects' electrical brain activity indicated that they handed off the memory representations used to control attention from working memory to long-term memory. However, when a large reward was possible, the neural signature of working memory returned as subjects recruited working memory to supplement the cognitive control afforded by the representations accumulated in long-term memory. The amplitude of this neural signature of working memory predicted the magnitude of the subsequent behavioral reward-based attention effects across tasks and individuals, showing the ubiquity of this cognitive reaction to high-stakes situations. PMID:23448876

High current density ion source

International Nuclear Information System (INIS)

King, H.J.

1977-01-01

A high-current-density ion source with high total current is achieved by individually directing the beamlets from an electron bombardment ion source through screen and accelerator electrodes. The openings in these screen and accelerator electrodes are oriented and positioned to direct the individual beamlets substantially toward a focus point. 3 figures, 1 table

Plasma Photonic Devices for High Energy Density Science

International Nuclear Information System (INIS)

Kodama, R.

2005-01-01

High power laser technologies are opening a variety of attractive fields of science and technology using high energy density plasmas such as plasma physics, laboratory astrophysics, material science, nuclear science including medical applications and laser fusion. The critical issues in the applications are attributed to the control of intense light and enormous density of charged particles including efficient generation of the particles such as MeV electrons and protons with a current density of TA/cm2. Now these application possibilities are limited only by the laser technology. These applications have been limited in the control of the high power laser technologies and their optics. However, if we have another device consisted of the 4th material, i.e. plasma, we will obtain a higher energy density condition and explore the application possibilities, which could be called high energy plasma device. One of the most attractive devices has been demonstrated in the fast ignition scheme of the laser fusion, which is cone-guiding of ultra-intense laser light in to high density regions1. This is one of the applications of the plasma device to control the ultra-intense laser light. The other role of the devices consisted of transient plasmas is control of enormous energy-density particles in a fashion analogous to light control with a conventional optical device. A plasma fibre (5?m/1mm), as one example of the devices, has guided and deflected the high-density MeV electrons generated by ultra-intense laser light 2. The electrons have been well collimated with either a lens-like plasma device or a fibre-like plasma, resulting in isochoric heating and creation of ultra-high pressures such as Giga bar with an order of 100J. Plasmas would be uniquely a device to easily control the higher energy density particles like a conventional optical device as well as the ultra-intense laser light, which could be called plasma photonic device. (Author)

Auditory feedback blocks memory benefits of cueing during sleep.

Science.gov (United States)

Schreiner, Thomas; Lehmann, Mick; Rasch, Björn

2015-10-28

It is now widely accepted that re-exposure to memory cues during sleep reactivates memories and can improve later recall. However, the underlying mechanisms are still unknown. As reactivation during wakefulness renders memories sensitive to updating, it remains an intriguing question whether reactivated memories during sleep also become susceptible to incorporating further information after the cue. Here we show that the memory benefits of cueing Dutch vocabulary during sleep are in fact completely blocked when memory cues are directly followed by either correct or conflicting auditory feedback, or a pure tone. In addition, immediate (but not delayed) auditory stimulation abolishes the characteristic increases in oscillatory theta and spindle activity typically associated with successful reactivation during sleep as revealed by high-density electroencephalography. We conclude that plastic processes associated with theta and spindle oscillations occurring during a sensitive period immediately after the cue are necessary for stabilizing reactivated memory traces during sleep.

Architecture and performance of radiation-hardened 64-bit SOS/MNOS memory

International Nuclear Information System (INIS)

Kliment, D.C.; Ronen, R.S.; Nielsen, R.L.; Seymour, R.N.; Splinter, M.R.

1976-01-01

This paper discusses the circuit architecture and performance of a nonvolatile 64-bit MNOS memory fabricated on silicon on sapphire (SOS). The circuit is a test vehicle designed to demonstrate the feasibility of a high-performance, high-density, radiation-hardened MNOS/SOS memory. The array is organized as 16 words by 4 bits and is fully decoded. It utilizes a two-(MNOS) transistor-per-bit cell and differential sensing scheme and is realized in PMOS static resistor load logic. The circuit was fabricated and tested as both a fast write random access memory (RAM) and an electrically alterable read only memory (EAROM) to demonstrate design and process flexibility. Discrete device parameters such as retention, circuit electrical characteristics, and tolerance to total dose and transient radiation are presented

A Fault-Tolerant Radiation-Robust Mass Storage Concept for Highly Scaled Flash Memory

Science.gov (United States)

Fuchs, Cristian M.; Trinitis, Carsten; Appel, Nicolas; Langer, Martin

2015-09-01

Future spacemissions will require vast amounts of data to be stored and processed aboard spacecraft. While satisfying operational mission requirements, storage systems must guarantee data integrity and recover damaged data throughout the mission. NAND-flash memories have become popular for space-borne high performance mass memory scenarios, though future storage concepts will rely upon highly scaled flash or other memory technologies. With modern flash memory, single bit erasure coding and RAID based concepts are insufficient. Thus, a fully run-time configurable, high performance, dependable storage concept, requiring a minimal set of logic or software. The solution is based on composite erasure coding and can be adjusted for altered mission duration or changing environmental conditions.

Flexible NAND-Like Organic Ferroelectric Memory Array

NARCIS (Netherlands)

Kam, B.; Ke, T.H.; Chasin, A.; Tyagi, M.; Cristoferi, C.; Tempelaars, K.; Breemen, A.J.J.M. van; Myny, K.; Schols, S.; Genoe, J.; Gelinck, G.H.; Heremans, P.

2014-01-01

We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing

Models for Experimental High Density Housing

Science.gov (United States)

Bradecki, Tomasz; Swoboda, Julia; Nowak, Katarzyna; Dziechciarz, Klaudia

2017-10-01

The article presents the effects of research on models of high density housing. The authors present urban projects for experimental high density housing estates. The design was based on research performed on 38 examples of similar housing in Poland that have been built after 2003. Some of the case studies show extreme density and that inspired the researchers to test individual virtual solutions that would answer the question: How far can we push the limits? The experimental housing projects show strengths and weaknesses of design driven only by such indexes as FAR (floor attenuation ratio - housing density) and DPH (dwellings per hectare). Although such projects are implemented, the authors believe that there are reasons for limits since high index values may be in contradiction to the optimum character of housing environment. Virtual models on virtual plots presented by the authors were oriented toward maximising the DPH index and DAI (dwellings area index) which is very often the main driver for developers. The authors also raise the question of sustainability of such solutions. The research was carried out in the URBAN model research group (Gliwice, Poland) that consists of academic researchers and architecture students. The models reflect architectural and urban regulations that are valid in Poland. Conclusions might be helpful for urban planners, urban designers, developers, architects and architecture students.

GABA level, gamma oscillation, and working memory performance in schizophrenia

OpenAIRE

Chen, Chi-Ming A.; Stanford, Arielle D.; Mao, Xiangling; Abi-Dargham, Anissa; Shungu, Dikoma C.; Lisanby, Sarah H.; Schroeder, Charles E.; Kegeles, Lawrence S.

2014-01-01

A relationship between working memory impairment, disordered neuronal oscillations, and abnormal prefrontal GABA function has been hypothesized in schizophrenia; however, in vivo GABA measurements and gamma band neural synchrony have not yet been compared in schizophrenia. This case–control pilot study (N = 24) compared baseline and working memory task-induced neuronal oscillations acquired with high-density electroencephalograms (EEGs) to GABA levels measured in vivo with magnetic resonance ...

Release of Inattentional Blindness by High Working Memory Load: Elucidating the Relationship between Working Memory and Selective Attention

Science.gov (United States)

de Fockert, Jan W.; Bremner, Andrew J.

2011-01-01

An unexpected stimulus often remains unnoticed if attention is focused elsewhere. This inattentional blindness has been shown to be increased under conditions of high memory load. Here we show that increasing working memory load can also have the opposite effect of reducing inattentional blindness (i.e., improving stimulus detection) if stimulus…

High density operation in pulsator

International Nuclear Information System (INIS)

Klueber, O.; Cannici, B.; Engelhardt, W.; Gernhardt, J.; Glock, E.; Karger, F.; Lisitano, G.; Mayer, H.M.; Meisel, D.; Morandi, P.

1976-03-01

This report summarizes the results of experiments at high electron densities (>10 14 cm -3 ) which have been achieved by pulsed gas inflow during the discharge. At these densities a regime is established which is characterized by βsub(p) > 1, nsub(i) approximately nsub(e), Tsub(i) approximately Tsub(e) and tausub(E) proportional to nsub(e). Thus the toroidal magnetic field contributes considerably to the plasma confinement and the ions constitute almost half of the plasma pressure. Furthermore, the confinement is appreciably improved and the plasma becomes impermeable to hot neutrals. (orig.) [de

Phenylethanoid glycosides of Pedicularis muscicola Maxim ameliorate high altitude-induced memory impairment.

Science.gov (United States)

Zhou, Baozhu; Li, Maoxing; Cao, Xinyuan; Zhang, Quanlong; Liu, Yantong; Ma, Qiang; Qiu, Yan; Luan, Fei; Wang, Xianmin

2016-04-01

Exposure to hypobaric hypoxia causes oxidative stress, neuronal degeneration and apoptosis that leads to memory impairment. Though oxidative stress contributes to neuronal degeneration and apoptosis in hypobaric hypoxia, the ability for phenylethanoid glycosides of Pedicularis muscicola Maxim (PhGs) to reverse high altitude memory impairment has not been studied. Rats were supplemented with PhGs orally for a week. After the fourth day of drug administration, rats were exposed to a 7500 m altitude simulation in a specially designed animal decompression chamber for 3 days. Spatial memory was assessed by the 8-arm radial maze test before and after exposure to hypobaric hypoxia. Histological assessment of neuronal degeneration was performed by hematoxylin-eosin (HE) staining. Changes in oxidative stress markers and changes in the expression of the apoptotic marker, caspase-3, were assessed in the hippocampus. Our results demonstrated that after exposure to hypobaric hypoxia, PhGs ameliorated high altitude memory impairment, as shown by the decreased values obtained for reference memory error (RME), working memory error (WME), and total error (TE). Meanwhile, administration of PhGs decreased hippocampal reactive oxygen species levels and consequent lipid peroxidation by elevating reduced glutathione levels and enhancing the free radical scavenging enzyme system. There was also a decrease in the number of pyknotic neurons and a reduction in caspase-3 expression in the hippocampus. These findings suggest that PhGs may be used therapeutically to ameliorate high altitude memory impairment. Copyright © 2016 Elsevier Inc. All rights reserved.

Flexible asymmetric supercapacitors with high energy and high power density in aqueous electrolytes

Science.gov (United States)

Cheng, Yingwen; Zhang, Hongbo; Lu, Songtao; Varanasi, Chakrapani V.; Liu, Jie

2013-01-01

Supercapacitors with both high energy and high power densities are critical for many practical applications. In this paper, we discuss the design and demonstrate the fabrication of flexible asymmetric supercapacitors based on nanocomposite electrodes of MnO2, activated carbon, carbon nanotubes and graphene. The combined unique properties of each of these components enable highly flexible and mechanically strong films that can serve as electrodes directly without using any current collectors or binders. Using these flexible electrodes and a roll-up approach, asymmetric supercapacitors with 2 V working voltage were successfully fabricated. The fabricated device showed excellent rate capability, with 78% of the original capacitance retained when the scan rate was increased from 2 mV s-1 to 500 mV s-1. Owing to the unique composite structure, these supercapacitors were able to deliver high energy density (24 W h kg-1) under high power density (7.8 kW kg-1) conditions. These features could enable supercapacitor based energy storage systems to be very attractive for a variety of critical applications, such as the power sources in hybrid electric vehicles and the back-up powers for wind and solar energy, where both high energy density and high power density are required.Supercapacitors with both high energy and high power densities are critical for many practical applications. In this paper, we discuss the design and demonstrate the fabrication of flexible asymmetric supercapacitors based on nanocomposite electrodes of MnO2, activated carbon, carbon nanotubes and graphene. The combined unique properties of each of these components enable highly flexible and mechanically strong films that can serve as electrodes directly without using any current collectors or binders. Using these flexible electrodes and a roll-up approach, asymmetric supercapacitors with 2 V working voltage were successfully fabricated. The fabricated device showed excellent rate capability, with 78% of

Some recent efforts toward high density implosions

International Nuclear Information System (INIS)

McClellan, G.E.

1980-01-01

Some recent Livermore efforts towards achieving high-density implosions are presented. The implosion dynamics necessary to compress DT fuel to 10 to 100 times liquid density are discussed. Methods of diagnosing the maximum DT density for a specific design are presented along with results to date. The dynamics of the double-shelled target with an exploding outer shell are described, and some preliminary experimental results are presented

Long-term memory and volatility clustering in high-frequency price changes

Science.gov (United States)

oh, Gabjin; Kim, Seunghwan; Eom, Cheoljun

2008-02-01

We studied the long-term memory in diverse stock market indices and foreign exchange rates using Detrended Fluctuation Analysis (DFA). For all high-frequency market data studied, no significant long-term memory property was detected in the return series, while a strong long-term memory property was found in the volatility time series. The possible causes of the long-term memory property were investigated using the return data filtered by the AR(1) model, reflecting the short-term memory property, the GARCH(1,1) model, reflecting the volatility clustering property, and the FIGARCH model, reflecting the long-term memory property of the volatility time series. The memory effect in the AR(1) filtered return and volatility time series remained unchanged, while the long-term memory property diminished significantly in the volatility series of the GARCH(1,1) filtered data. Notably, there is no long-term memory property, when we eliminate the long-term memory property of volatility by the FIGARCH model. For all data used, although the Hurst exponents of the volatility time series changed considerably over time, those of the time series with the volatility clustering effect removed diminish significantly. Our results imply that the long-term memory property of the volatility time series can be attributed to the volatility clustering observed in the financial time series.

Improved GAMMA 10 tandem mirror confinement in high density plasma

International Nuclear Information System (INIS)

Yatsu, K.; Cho, T.; Higaki, H.; Hirata, M.; Hojo, H.; Ichimura, M.; Ishii, K.; Ishimoto, Y.; Itakura, A.; Katanuma, I.; Kohagura, J.; Minami, R.; Nakashima, Y.; Numakura, T.; Saito, T.; Saosaki, S.; Takemura, Y.; Tatematsu, Y.; Yoshida, M.; Yoshikawa, M.

2003-01-01

GAMMA 10 experiments have advanced in high density experiments after the last IAEA fusion energy conference in 2000 where we reported the production of the high density plasma through use of ion cyclotron range of frequency heating at a high harmonic frequency and neutral beam injection in the anchor cells. However, the diamagnetic signal of the plasma decreased when electron cyclotron resonance heating was applied for the potential formation. Recently a high density plasma has been obtained without degradation of the diamagnetic signal and with much improved reproducibility than before. The high density plasma was attained through adjustment of the spacing of the conducting plates installed in the anchor transition regions. The potential confinement of the plasma has been extensively studied. Dependences of the ion confinement time, ion-energy confinement time and plasma confining potential on plasma density were obtained for the first time in the high density region up to a density of 4x10 18 m -3 . (author)

High-density limit of quantum chromodynamics

International Nuclear Information System (INIS)

Alvarez, E.

1983-01-01

By means of a formal expansion of the partition function presumably valid at large baryon densities, the propagator of the quarks is expressed in terms of the gluon propagator. This result is interpreted as implying that correlations between quarks and gluons are unimportant at high enough density, so that a kind of mean-field approximation gives a very accurate description of the physical system

Fueling with edge recycling to high-density in DIII-D

Energy Technology Data Exchange (ETDEWEB)

Leonard, A.W., E-mail: leonard@fusion.gat.com [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States); Elder, J.D. [University of Toronto Institute of Aerospace Studies, Toronto, Canada M3H 5T6 (Canada); Canik, J.M. [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831 (United States); Groebner, R.J.; Osborne, T.H. [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States)

2013-07-15

Pedestal fueling through edge recycling is examined with the interpretive OEDGE code for high-density discharges in DIII-D. A high current, high-density discharge is found to have a similar radial ion flux profile through the pedestal to a lower current, lower density discharge. The higher density discharge, however, has a greater density gradient indicating a pedestal particle diffusion coefficient that scales near linear with 1/I{sub p}. The time dependence of density profile is taken into account in the analysis of a discharge with low frequency ELMs. The time-dependent analysis indicates that the inferred neutral ionization source is inadequate to account for the increase in the density profile between ELMs, implying an inward density convection, or density pinch, near the top of the pedestal.

Ultra-High Density Spectral Storage Materials

National Research Council Canada - National Science Library

Hasan, Zameer U

2002-01-01

.... Being atomic scale storage, spectral storage has the potential of providing orders of magnitude denser memories than present day memories that depend on the hulk properties of the storage medium...

Hypothalamic-pituitary-adrenal axis reactivity to psychological stress and memory in middle-aged women: high responders exhibit enhanced declarative memory performance.

Science.gov (United States)

Domes, G; Heinrichs, M; Reichwald, U; Hautzinger, M

2002-10-01

According to recent studies, elevated cortisol levels are associated with impaired declarative memory performance. This specific effect of cortisol has been shown in several studies using pharmacological doses of cortisol. The present study was designed to determine the effects of endogenously stimulated cortisol secretion on memory performance in healthy middle-aged women. For psychological stress challenging, we employed the Trier Social Stress Test (TSST). Subjects were assigned to either the TSST or a non-stressful control condition. Declarative and non-declarative memory performance was measured by a combined priming-free-recall-task. No significant group differences were found for memory performance. Post hoc analyses of variance indicated that regardless of experimental condition the subjects with remarkably high cortisol increase in response to the experimental procedure (high responders) showed increased memory performance in the declarative task compared to subjects with low cortisol response (low responders). The results suggest that stress-induced cortisol failed to impair memory performance. The results are discussed with respect to gender-specific effects and modulatory effects of the sympathetic nervous system and psychological variables. Copyright 2002 Elsevier Science Ltd.

High-performance non-volatile organic ferroelectric memory on banknotes

KAUST Repository

Khan, Yasser

2012-03-21

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance non-volatile organic ferroelectric memory on banknotes.

Science.gov (United States)

Khan, M A; Bhansali, Unnat S; Alshareef, H N

2012-04-24

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low density, variation in sintered density and high nitrogen in uranium dioxide

International Nuclear Information System (INIS)

Balakrishna, Palanki; Murty, B.N.; Anuradha, M.; Nageshwara Rao, P.; Jayaraj, R.N.; Ganguly, C.

2000-01-01

Low sintered density and density variation in sintered UO 2 were found to have been caused by non uniformity in the granule feed characteristics to the compacting press. The nitrogen impurity content of sintered UO 2 was found to be sintering furnace related and associated with low sintered density pellets. The problems of low density, variation in sintered density and high nitrogen could be solved by the replacement of the prevailing four punch precompaction by a single punch process; by the introduction of a vibro-sieve for the separation of fine particles from the press feed granules; by innovation in the powder feed shoe design for simultaneous and uniform dispensing of powder in all the die holes; by increasing the final compaction pressure and by modifying the gas flows and preheat temperature in the sintering furnace. (author)

Semantic Memory in the Clinical Progression of Alzheimer Disease.

Science.gov (United States)

Tchakoute, Christophe T; Sainani, Kristin L; Henderson, Victor W

2017-09-01

Semantic memory measures may be useful in tracking and predicting progression of Alzheimer disease. We investigated relationships among semantic memory tasks and their 1-year predictive value in women with Alzheimer disease. We conducted secondary analyses of a randomized clinical trial of raloxifene in 42 women with late-onset mild-to-moderate Alzheimer disease. We assessed semantic memory with tests of oral confrontation naming, category fluency, semantic recognition and semantic naming, and semantic density in written narrative discourse. We measured global cognition (Alzheimer Disease Assessment Scale, cognitive subscale), dementia severity (Clinical Dementia Rating sum of boxes), and daily function (Activities of Daily Living Inventory) at baseline and 1 year. At baseline and 1 year, most semantic memory scores correlated highly or moderately with each other and with global cognition, dementia severity, and daily function. Semantic memory task performance at 1 year had worsened one-third to one-half standard deviation. Factor analysis of baseline test scores distinguished processes in semantic and lexical retrieval (semantic recognition, semantic naming, confrontation naming) from processes in lexical search (semantic density, category fluency). The semantic-lexical retrieval factor predicted global cognition at 1 year. Considered separately, baseline confrontation naming and category fluency predicted dementia severity, while semantic recognition and a composite of semantic recognition and semantic naming predicted global cognition. No individual semantic memory test predicted daily function. Semantic-lexical retrieval and lexical search may represent distinct aspects of semantic memory. Semantic memory processes are sensitive to cognitive decline and dementia severity in Alzheimer disease.

High throughput nonparametric probability density estimation.

Science.gov (United States)

Farmer, Jenny; Jacobs, Donald

2018-01-01

In high throughput applications, such as those found in bioinformatics and finance, it is important to determine accurate probability distribution functions despite only minimal information about data characteristics, and without using human subjectivity. Such an automated process for univariate data is implemented to achieve this goal by merging the maximum entropy method with single order statistics and maximum likelihood. The only required properties of the random variables are that they are continuous and that they are, or can be approximated as, independent and identically distributed. A quasi-log-likelihood function based on single order statistics for sampled uniform random data is used to empirically construct a sample size invariant universal scoring function. Then a probability density estimate is determined by iteratively improving trial cumulative distribution functions, where better estimates are quantified by the scoring function that identifies atypical fluctuations. This criterion resists under and over fitting data as an alternative to employing the Bayesian or Akaike information criterion. Multiple estimates for the probability density reflect uncertainties due to statistical fluctuations in random samples. Scaled quantile residual plots are also introduced as an effective diagnostic to visualize the quality of the estimated probability densities. Benchmark tests show that estimates for the probability density function (PDF) converge to the true PDF as sample size increases on particularly difficult test probability densities that include cases with discontinuities, multi-resolution scales, heavy tails, and singularities. These results indicate the method has general applicability for high throughput statistical inference.

Soluble dendrimers europium(III) β-diketonate complex for organic memory devices

International Nuclear Information System (INIS)

Wang Binbin; Fang Junfeng; Li Bin; You Han; Ma Dongge; Hong Ziruo; Li Wenlian; Su Zhongmin

2008-01-01

We report the synthesis of a soluble dendrimers europium(III) complex, tris(dibenzoylmethanato)(1,3,5-tris[2-(2'-pyridyl) benzimidazoly]methylbenzene)-europium(III), and its application in organic electrical bistable memory device. Excellent stability that ensured more than 10 6 write-read-erase-reread cycles has been performed in ambient conditions without current-induced degradation. High-density, low-cost memory, good film-firming property, fascinating thermal and morphological stability allow the application of the dendrimers europium(III) complex as an active medium in non-volatile memory devices

Graphene resistive random memory — the promising memory device in next generation

International Nuclear Information System (INIS)

Wang Xue-Feng; Zhao Hai-Ming; Yang Yi; Ren Tian-Ling

2017-01-01

Graphene-based resistive random access memory (GRRAM) has grasped researchers’ attention due to its merits compared with ordinary RRAM. In this paper, we briefly review different types of GRRAMs. These GRRAMs can be divided into two categories: graphene RRAM and graphene oxide (GO)/reduced graphene oxide (rGO) RRAM. Using graphene as the electrode, GRRAM can own many good characteristics, such as low power consumption, higher density, transparency, SET voltage modulation, high uniformity, and so on. Graphene flakes sandwiched between two dielectric layers can lower the SET voltage and achieve multilevel switching. Moreover, the GRRAM with rGO and GO as the dielectric or electrode can be simply fabricated. Flexible and high performance RRAM and GO film can be modified by adding other materials layer or making a composite with polymer, nanoparticle, and 2D materials to further improve the performance. Above all, GRRAM shows huge potential to become the next generation memory. (topical reviews)

Emotion strengthens high-priority memory traces but weakens low-priority memory traces.

Science.gov (United States)

Sakaki, Michiko; Fryer, Kellie; Mather, Mara

2014-02-01

When people encounter emotional events, their memory for those events is typically enhanced. But it has been unclear how emotionally arousing events influence memory for preceding information. Does emotional arousal induce retrograde amnesia or retrograde enhancement? The current study revealed that this depends on the top-down goal relevance of the preceding information. Across three studies, we found that emotional arousal induced by one image facilitated memory for the preceding neutral item when people prioritized that neutral item. In contrast, an emotionally arousing image impaired memory for the preceding neutral item when people did not prioritize that neutral item. Emotional arousal elicited by both negative and positive pictures showed this pattern of enhancing or impairing memory for the preceding stimulus depending on its priority. These results indicate that emotional arousal amplifies the effects of top-down priority in memory formation.

Highly efficient red electrophosphorescent devices at high current densities

International Nuclear Information System (INIS)

Wu Youzhi; Zhu Wenqing; Zheng Xinyou; Sun, Runguang; Jiang Xueyin; Zhang Zhilin; Xu Shaohong

2007-01-01

Efficiency decrease at high current densities in red electrophosphorescent devices is drastically restrained compared with that from conventional electrophosphorescent devices by using bis(2-methyl-8-quinolinato)4-phenylphenolate aluminum (BAlq) as a hole and exciton blocker. Ir complex, bis(2-(2'-benzo[4,5-α]thienyl) pyridinato-N,C 3' ) iridium (acetyl-acetonate) is used as an emitter, maximum external quantum efficiency (QE) of 7.0% and luminance of 10000cd/m 2 are obtained. The QE is still as high as 4.1% at higher current density J=100mA/cm 2 . CIE-1931 co-ordinates are 0.672, 0.321. A carrier trapping mechanism is revealed to dominate in the process of electroluminescence

High Work Output Ni-Ti-Pt High Temperature Shape Memory Alloys and Associated Processing Methods

Science.gov (United States)

Noebe, Ronald D. (Inventor); Draper, Susan L. (Inventor); Nathal, Michael V. (Inventor); Garg, Anita (Inventor)

2009-01-01

According to the invention, compositions of Ni-Ti-Pt high temperature, high force, shape memory alloys are disclosed that have transition temperatures above 100 C.; have narrow hysteresis; and produce a high specific work output.

Brains of verbal memory specialists show anatomical differences in language, memory and visual systems.

Science.gov (United States)

Hartzell, James F; Davis, Ben; Melcher, David; Miceli, Gabriele; Jovicich, Jorge; Nath, Tanmay; Singh, Nandini Chatterjee; Hasson, Uri

2016-05-01

We studied a group of verbal memory specialists to determine whether intensive oral text memory is associated with structural features of hippocampal and lateral-temporal regions implicated in language processing. Professional Vedic Sanskrit Pandits in India train from childhood for around 10years in an ancient, formalized tradition of oral Sanskrit text memorization and recitation, mastering the exact pronunciation and invariant content of multiple 40,000-100,000 word oral texts. We conducted structural analysis of gray matter density, cortical thickness, local gyrification, and white matter structure, relative to matched controls. We found massive gray matter density and cortical thickness increases in Pandit brains in language, memory and visual systems, including i) bilateral lateral temporal cortices and ii) the anterior cingulate cortex and the hippocampus, regions associated with long and short-term memory. Differences in hippocampal morphometry matched those previously documented for expert spatial navigators and individuals with good verbal working memory. The findings provide unique insight into the brain organization implementing formalized oral knowledge systems. Copyright © 2015. Published by Elsevier Inc.

High-throughput gene expression profiling of memory differentiation in primary human T cells

Directory of Open Access Journals (Sweden)

Russell Kate

2008-08-01

Full Text Available Abstract Background The differentiation of naive T and B cells into memory lymphocytes is essential for immunity to pathogens. Therapeutic manipulation of this cellular differentiation program could improve vaccine efficacy and the in vitro expansion of memory cells. However, chemical screens to identify compounds that induce memory differentiation have been limited by 1 the lack of reporter-gene or functional assays that can distinguish naive and memory-phenotype T cells at high throughput and 2 a suitable cell-line representative of naive T cells. Results Here, we describe a method for gene-expression based screening that allows primary naive and memory-phenotype lymphocytes to be discriminated based on complex genes signatures corresponding to these differentiation states. We used ligation-mediated amplification and a fluorescent, bead-based detection system to quantify simultaneously 55 transcripts representing naive and memory-phenotype signatures in purified populations of human T cells. The use of a multi-gene panel allowed better resolution than any constituent single gene. The method was precise, correlated well with Affymetrix microarray data, and could be easily scaled up for high-throughput. Conclusion This method provides a generic solution for high-throughput differentiation screens in primary human T cells where no single-gene or functional assay is available. This screening platform will allow the identification of small molecules, genes or soluble factors that direct memory differentiation in naive human lymphocytes.

Fundamental properties of high-quality carbon nanofoam: from low to high density

Directory of Open Access Journals (Sweden)

Natalie Frese

2016-12-01

Full Text Available Highly uniform samples of carbon nanofoam from hydrothermal sucrose carbonization were studied by helium ion microscopy (HIM, X-ray photoelectron spectroscopy (XPS, and Raman spectroscopy. Foams with different densities were produced by changing the process temperature in the autoclave reactor. This work illustrates how the geometrical structure, electron core levels, and the vibrational signatures change when the density of the foams is varied. We find that the low-density foams have very uniform structure consisting of micropearls with ≈2–3 μm average diameter. Higher density foams contain larger-sized micropearls (≈6–9 μm diameter which often coalesced to form nonspherical μm-sized units. Both, low- and high-density foams are comprised of predominantly sp2-type carbon. The higher density foams, however, show an advanced graphitization degree and a stronger sp3-type electronic contribution, related to the inclusion of sp3 connections in their surface network.

Sputtered thin films for high density tape recording

NARCIS (Netherlands)

Nguyen, L.T.

This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

High-density housing that works for all

Energy Technology Data Exchange (ETDEWEB)

Hasan, Arif

2010-03-15

In an urbanising world, the way people fit into cities is vastly important - socially, economically, environmentally, even psychologically. So density, or the number of people living in a given area, is central to urban design and planning. Both governments and markets tend to get density wrong, leading to overcrowding, urban sprawl or often both. A case in point are the high-rise buildings springing up throughtout urban Asia - perceived as key features of that widely touted concept, the 'world-class city'. While some may offer a viable solution to land pressures and density requirements, many built to house evicted or resettled 'slum' dwellers are a social and economic nightmare - inconveniently sited, overcrowded and costly. New evidence from Karachi, Pakistan, reveals a real alternative. Poor people can create liveable high-density settlements as long as community control, the right technical assistance and flexible designs are in place. A city is surely 'world-class' only when it is cosmopolitan – built to serve all, including the poorest.

High density high performance plasma with internal diffusion barrier in Large Helical Device

International Nuclear Information System (INIS)

Sakamoto, R.; Kobayashi, M.; Miyazawa, J.

2008-10-01

A attractive high density plasma operational regime, namely an internal diffusion barrier (IDB), has been discovered in the intrinsic helical divertor configuration on the Large Helical Device (LHD). The IDB which enables core plasma to access a high density/high pressure regime has been developed. It is revealed that the IDB is reproducibly formed by pellet fueling in the magnetic configurations shifted outward in major radius. Attainable central plasma density exceeds 1x10 21 m -3 . Central pressure reaches 1.5 times atmospheric pressure and the central β value becomes fairly high even at high magnetic field, i.e. β(0)=5.5% at B t =2.57 T. (author)

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

International Nuclear Information System (INIS)

Altamore, C; Tringali, C; Sparta', N; Marco, S Di; Grasso, A; Ravesi, S

2010-01-01

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10 5 ) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10 1 Hz to 10 6 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl 2 /Ar chemistry. The relationship between the etch rate and the Cl 2 /Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl 2 /Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

Energy Technology Data Exchange (ETDEWEB)

Altamore, C; Tringali, C; Sparta' , N; Marco, S Di; Grasso, A; Ravesi, S [STMicroelectronics, Industial and Multi-segment Sector R and D, Catania (Italy)

2010-02-15

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10{sup 5}) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10{sup 1} Hz to 10{sup 6} Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl{sub 2}/Ar chemistry. The relationship between the etch rate and the Cl{sub 2}/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl{sub 2}/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Memory effect in the high-temperature superconducting bulks

International Nuclear Information System (INIS)

Zhang, Xing-Yi; Zhou, Jun; Zhou, You-He

2013-01-01

Highlights: •Effects of temperature cycles on levitation force relaxation are investigated. •Memory effect of the YBCO bulks is observed in experiments. •With an increase of temperature, memory of the superconductor is gradually lost. -- Abstract: We present an experimental investigation of the relaxation of vertical force components in a high-temperature superconducting levitation system with different temperature cycle processes. For a selected ambient temperature (T 1 ) of the system, the experimental results show that the relaxations of the levitation forces are strongly dependent on the initial temperature. When the sample was submitted to temperature jumps around T 1 , the sample temperature was regulated at T 2 , and there were two cases of the experiments, ΔT = T 2 − T 1 0 (positive temperature cycle). It was found that in the case of negative temperature cycle, the superconducting samples have memory effect. And for the positive temperature cycle, with the experimental temperature increase, the memory effect of samples is gradually losing. Additionally, with the increase of temperature, the influences of the negative and positive temperature cycle on the levitation force relaxation are unsymmetrical. All the results are interpreted by using the characteristics of the free energy ‘ground’ plot of the Spin-glasses qualitatively

Performance of synthetic antiferromagnetic racetrack memory: domain wall versus skyrmion

KAUST Repository

Tomasello, R; Puliafito, V; Martinez, E; Manchon, Aurelien; Ricci, M; Carpentieri, M; Finocchio, G

2017-01-01

A storage scheme based on racetrack memory, where the information can be coded in a domain or a skyrmion, seems to be an alternative to conventional hard disk drive for high density storage. Here, we perform a full micromagnetic study

Decoding Overlapping Memories in the Medial Temporal Lobes Using High-Resolution fMRI

Science.gov (United States)

Chadwick, Martin J.; Hassabis, Demis; Maguire, Eleanor A.

2011-01-01

The hippocampus is proposed to process overlapping episodes as discrete memory traces, although direct evidence for this in human episodic memory is scarce. Using green-screen technology we created four highly overlapping movies of everyday events. Participants were scanned using high-resolution fMRI while recalling the movies. Multivariate…

Numerical analysis of energy density and particle density in high energy heavy-ion collisions

International Nuclear Information System (INIS)

Fu Yuanyong; Lu Zhongdao

2004-01-01

Energy density and particle density in high energy heavy-ion collisions are calculated with infinite series expansion method and Gauss-Laguerre formulas in numerical integration separately, and the results of these two methods are compared, the higher terms and linear terms in series expansion are also compared. The results show that Gauss-Laguerre formulas is a good method in calculations of high energy heavy-ion collisions. (author)

Room-temperature antiferromagnetic memory resistor.

Science.gov (United States)

Marti, X; Fina, I; Frontera, C; Liu, Jian; Wadley, P; He, Q; Paull, R J; Clarkson, J D; Kudrnovský, J; Turek, I; Kuneš, J; Yi, D; Chu, J-H; Nelson, C T; You, L; Arenholz, E; Salahuddin, S; Fontcuberta, J; Jungwirth, T; Ramesh, R

2014-04-01

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

AC Electric Field Activated Shape Memory Polymer Composite

Science.gov (United States)

Kang, Jin Ho; Siochi, Emilie J.; Penner, Ronald K.; Turner, Travis L.

2011-01-01

Shape memory materials have drawn interest for applications like intelligent medical devices, deployable space structures and morphing structures. Compared to other shape memory materials like shape memory alloys (SMAs) or shape memory ceramics (SMCs), shape memory polymers (SMPs) have high elastic deformation that is amenable to tailored of mechanical properties, have lower density, and are easily processed. However, SMPs have low recovery stress and long response times. A new shape memory thermosetting polymer nanocomposite (LaRC-SMPC) was synthesized with conductive fillers to enhance its thermo-mechanical characteristics. A new composition of shape memory thermosetting polymer nanocomposite (LaRC-SMPC) was synthesized with conductive functionalized graphene sheets (FGS) to enhance its thermo-mechanical characteristics. The elastic modulus of LaRC-SMPC is approximately 2.7 GPa at room temperature and 4.3 MPa above its glass transition temperature. Conductive FGSs-doped LaRC-SMPC exhibited higher conductivity compared to pristine LaRC SMP. Applying an electric field at between 0.1 Hz and 1 kHz induced faster heating to activate the LaRC-SMPC s shape memory effect relative to applying DC electric field or AC electric field at frequencies exceeding1 kHz.

Leakage current characteristics of the multiple metal alloy nanodot memory

International Nuclear Information System (INIS)

Lee, Gae Hun; Lee, Jung Min; Yang, Hyung Jun; Song, Yun Heub; Bea, Ji Chel; Tanaka, Tetsu

2010-01-01

The leakage current characteristics of a multiple metal alloy nanodot device for a nonvolatile random access memory using FePt materials are investigated. Several annealing conditions are evaluated and optimized to suppress the leakage current and to better the memory characterisctics. This work confirmed that the annealing condition of 700 .deg. C in a high vacuum ambience (under 1 x 10 -5 Pa) simultaneously provided good cell characteristics from a high dot density of over 1 x 10 13 /cm 2 and a low leakage current. In addition, a smaller nanodot diameter was found to give a lower leakage current for the multiple nanodot memory. Finally, for the proposed annealing condition, the quadruple FePt multiple nanodot memory with a 2-nm dot diameter provided good leakage current characteristics, showing a threshold voltage shift of under 5% at an initial retention stage of 1000 sec.

High density regimes and beta limits in JET

International Nuclear Information System (INIS)

Smeulders, P.

1990-01-01

Results are first presented on the density limit in JET discharges with graphite (C), Be gettered graphite and Be limiters. There is a clear improvement in the case of Be limiters. The Be gettered phase showed no increase in the gas fueled density limit, except with Ion Cyclotron Resonance Heating (ICRH), but, the limit changed character. During MARFE-formation, any further increase in density was prevented, leading to a soft density limit. The soft density limit was a function of input power and impurity content with a week dependence on q. Helium and pellet fuelled discharges exceeded the gas-fuelled global density limits, but essentially had the same edge limit. In the second part, results are presented of high β operation in low-B Double-Null (DN) X-point configurations with Be-gettered carbon target plates. The Troyon limit was reached during H-mode discharges and toroidal β values of 5.5% were obtained. At high beta, the sawteeth were modified and characterised by very rapid heat-waves and fishbone-like pre- and post-cursors with strongly ballooning character. 17 refs., 5 figs

The use of low density high accuracy (LDHA) data for correction of high density low accuracy (HDLA) point cloud

Science.gov (United States)

Rak, Michal Bartosz; Wozniak, Adam; Mayer, J. R. R.

2016-06-01

Coordinate measuring techniques rely on computer processing of coordinate values of points gathered from physical surfaces using contact or non-contact methods. Contact measurements are characterized by low density and high accuracy. On the other hand optical methods gather high density data of the whole object in a short time but with accuracy at least one order of magnitude lower than for contact measurements. Thus the drawback of contact methods is low density of data, while for non-contact methods it is low accuracy. In this paper a method for fusion of data from two measurements of fundamentally different nature: high density low accuracy (HDLA) and low density high accuracy (LDHA) is presented to overcome the limitations of both measuring methods. In the proposed method the concept of virtual markers is used to find a representation of pairs of corresponding characteristic points in both sets of data. In each pair the coordinates of the point from contact measurements is treated as a reference for the corresponding point from non-contact measurement. Transformation enabling displacement of characteristic points from optical measurement to their match from contact measurements is determined and applied to the whole point cloud. The efficiency of the proposed algorithm was evaluated by comparison with data from a coordinate measuring machine (CMM). Three surfaces were used for this evaluation: plane, turbine blade and engine cover. For the planar surface the achieved improvement was of around 200 μm. Similar results were obtained for the turbine blade but for the engine cover the improvement was smaller. For both freeform surfaces the improvement was higher for raw data than for data after creation of mesh of triangles.

High energy density capacitors fabricated by thin film technology

International Nuclear Information System (INIS)

Barbee, T W; Johnson, G W; Wagner, A V.

1999-01-01

Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

HIGH DENSITY QCD WITH HEAVY-IONS

CERN Multimedia

The Addendum 1 to Volume 2 of the CMS Physics TDR has been published The Heavy-Ion analysis group completed the writing of a TDR summarizing the CMS plans in using heavy ion collisions to study high density QCD. The document was submitted to the LHCC in March and presented in the Open Session of the LHCC on May 9th. The study of heavy-ion physics at the LHC is promising to be very exciting. LHC will open a new energy frontier in ultra-relativistic heavy-ion physics. The collision energy of heavy nuclei at sNN = 5.5 TeV will be thirty times larger than what is presently available at RHIC. We will certainly probe quark and gluon matter at unprecedented values of energy density. The prime goal of this research programme is to study the fundamental theory of the strong interaction - Quantum Chromodynamics (QCD) - in extreme conditions of temperature, density and parton momentum fraction (low-x). Such studies, with impressive experimental and theoretical advances in recent years thanks to the wealth of high-qua...

Does visual short-term memory have a high-capacity stage?

Science.gov (United States)

Matsukura, Michi; Hollingworth, Andrew

2011-12-01

Visual short-term memory (VSTM) has long been considered a durable, limited-capacity system for the brief retention of visual information. However, a recent work by Sligte et al. (Plos One 3:e1699, 2008) reported that, relatively early after the removal of a memory array, a cue allowed participants to access a fragile, high-capacity stage of VSTM that is distinct from iconic memory. In the present study, we examined whether this stage division is warranted by attempting to corroborate the existence of an early, high-capacity form of VSTM. The results of four experiments did not support Sligte et al.'s claim, since we did not obtain evidence for VSTM retention that exceeded traditional estimates of capacity. However, performance approaching that observed in Sligte et al. can be achieved through extensive practice, providing a clear explanation for their findings. Our evidence favors the standard view of VSTM as a limited-capacity system that maintains a few object representations in a relatively durable form.

An x-ray backlit Talbot-Lau deflectometer for high-energy-density electron density diagnostics

Science.gov (United States)

Valdivia, M. P.; Stutman, D.; Stoeckl, C.; Theobald, W.; Mileham, C.; Begishev, I. A.; Bromage, J.; Regan, S. P.

2016-02-01

X-ray phase-contrast techniques can measure electron density gradients in high-energy-density plasmas through refraction induced phase shifts. An 8 keV Talbot-Lau interferometer consisting of free standing ultrathin gratings was deployed at an ultra-short, high-intensity laser system using K-shell emission from a 1-30 J, 8 ps laser pulse focused on thin Cu foil targets. Grating survival was demonstrated for 30 J, 8 ps laser pulses. The first x-ray deflectometry images obtained under laser backlighting showed up to 25% image contrast and thus enabled detection of electron areal density gradients with a maximum value of 8.1 ± 0.5 × 1023 cm-3 in a low-Z millimeter sized sample. An electron density profile was obtained from refraction measurements with an error of x-ray source-size, similar to conventional radiography.

Chapter 7: High-Density H-Mode Operation in ASDEX Upgrade

International Nuclear Information System (INIS)

Stober, Joerg Karl; Lang, Peter Thomas; Mertens, Vitus

2003-01-01

Recent results are reported on the maximum achievable H-mode density and the behavior of pedestal density and central density peaking as this limit is approached. The maximum achievable H-mode density roughly scales as the Greenwald density, though a dependence on B t is clearly observed. In contrast to the stiff temperature profiles, the density profiles seem to allow more shape variation and especially with high-field-side pellet-injection, strongly peaked profiles with good confinement have been achieved. Also, spontaneous density peaking at high densities is observed in ASDEX Upgrade, which is related to the generally observed large time constants for the density profile equilibration. The equilibrated density profile shapes depend strongly on the heat-flux profile in the sense that central heating leads to significantly flatter profiles

Durable fear memories require PSD-95

Science.gov (United States)

Fitzgerald, Paul J.; Pinard, Courtney R.; Camp, Marguerite C.; Feyder, Michael; Sah, Anupam; Bergstrom, Hadley; Graybeal, Carolyn; Liu, Yan; Schlüter, Oliver; Grant, Seth G.N.; Singewald, Nicolas; Xu, Weifeng; Holmes, Andrew

2014-01-01

Traumatic fear memories are highly durable but also dynamic, undergoing repeated reactivation and rehearsal over time. While overly persistent fear memories underlie anxiety disorders such as posttraumatic stress disorder, the key neural and molecular mechanisms underlying fear memory durability remain unclear. Post-synaptic density 95 (PSD-95) is a synaptic protein regulating glutamate receptor anchoring, synaptic stability and certain types of memory. Employing a loss-of-function mutant mouse lacking the guanylate kinase domain of PSD-95 (PSD-95GK), we analyzed the contribution of PSD-95 to fear memory formation and retrieval, and sought to identify the neural basis of PSD-95-mediated memory maintenance using ex vivo immediate-early gene mapping, in vivo neuronal recordings and viral-mediated knockdown approaches. We show that PSD-95 is dispensable for the formation and expression of recent fear memories, but essential for the formation of precise and flexible fear memories and for the maintenance of memories at remote time points. The failure of PSD-95GK mice to retrieve remote cued fear memories was associated with hypoactivation of the infralimbic cortex (IL) (not anterior cingulate (ACC) or prelimbic cortex), reduced IL single-unit firing and bursting, and attenuated IL gamma and theta oscillations. Adeno-associated PSD-95 virus-mediated knockdown in the IL, not ACC, was sufficient to impair recent fear extinction and remote fear memory, and remodel IL dendritic spines. Collectively, these data identify PSD-95 in the IL as a critical mechanism supporting the durability of fear memories over time. These preclinical findings have implications for developing novel approaches to treating trauma-based anxiety disorders that target the weakening of overly persistent fear memories. PMID:25510511

Experimental study of high density foods for the Space Operations Center

Science.gov (United States)

Ahmed, S. M.

1981-01-01

The experimental study of high density foods for the Space Operations Center is described. A sensory evaluation of the high density foods was conducted first to test the acceptability of the products. A shelf-life study of the high density foods was also conducted for three different time lengths at three different temperatures. The nutritional analysis of the high density foods is at present incomplete.

Efficient Four-Parametric with-and-without-Memory Iterative Methods Possessing High Efficiency Indices

Directory of Open Access Journals (Sweden)

Alicia Cordero

2018-01-01

Full Text Available We construct a family of derivative-free optimal iterative methods without memory to approximate a simple zero of a nonlinear function. Error analysis demonstrates that the without-memory class has eighth-order convergence and is extendable to with-memory class. The extension of new family to the with-memory one is also presented which attains the convergence order 15.5156 and a very high efficiency index 15.51561/4≈1.9847. Some particular schemes of the with-memory family are also described. Numerical examples and some dynamical aspects of the new schemes are given to support theoretical results.

Fluorescent Fe K Emission from High Density Accretion Disks

Science.gov (United States)

Bautista, Manuel; Mendoza, Claudio; Garcia, Javier; Kallman, Timothy R.; Palmeri, Patrick; Deprince, Jerome; Quinet, Pascal

2018-06-01

Iron K-shell lines emitted by gas closely orbiting black holes are observed to be grossly broadened and skewed by Doppler effects and gravitational redshift. Accordingly, models for line profiles are widely used to measure the spin (i.e., the angular momentum) of astrophysical black holes. The accuracy of these spin estimates is called into question because fitting the data requires very high iron abundances, several times the solar value. Meanwhile, no plausible physical explanation has been proffered for why these black hole systems should be so iron rich. The most likely explanation for the super-solar iron abundances is a deficiency in the models, and the leading candidate cause is that current models are inapplicable at densities above 1018 cm-3. We study the effects of high densities on the atomic parameters and on the spectral models for iron ions. At high densities, Debye plasma can affect the effective atomic potential of the ions, leading to observable changes in energy levels and atomic rates with respect to the low density case. High densities also have the effec of lowering energy the atomic continuum and reducing the recombination rate coefficients. On the spectral modeling side, high densities drive level populations toward a Boltzman distribution and very large numbers of excited atomic levels, typically accounted for in theoretical spectral models, may contribute to the K-shell spectrum.

Phenomenology of high density disruptions in the TFTR tokamak

International Nuclear Information System (INIS)

Fredrickson, E.D.; McGuire, K.M.; Bell, M.G.

1993-01-01

Studies of high density disruptions on TFTR, including a comparison of minor and major disruptions at high density, provide important new information regarding the nature of the disruption mechanism. Further, for the first time, an (m,n)=(1,1) 'cold bubble' precursor to high density disruptions has been experimentally observed in the electron temperature profile. The precursor to major disruptions resembles the 'vacuum bubble' model of disruptions first proposed by B.B. Kadomtsev and O.P. Pogutse (Sov. Phys. - JETP 38 (1974) 283). (author). Letter-to-the-editor. 25 refs, 3 figs

High Energy Density Polymer Film Capacitors

National Research Council Canada - National Science Library

Boufelfel, Ali

2006-01-01

High-energy-density capacitors that are compact and light-weight are extremely valuable in a number of critical DoD systems that include portable field equipment, pulsed lasers, detection equipment...

High-fidelity polarization storage in a gigahertz bandwidth quantum memory

International Nuclear Information System (INIS)

England, D G; Michelberger, P S; Champion, T F M; Reim, K F; Lee, K C; Sprague, M R; Jin, X-M; Langford, N K; Kolthammer, W S; Nunn, J; Walmsley, I A

2012-01-01

We demonstrate a dual-rail optical Raman memory inside a polarization interferometer; this enables us to store polarization-encoded information at GHz bandwidths in a room-temperature atomic ensemble. By performing full process tomography on the system, we measure up to 97 ± 1% process fidelity for the storage and retrieval process. At longer storage times, the process fidelity remains high, despite a loss of efficiency. The fidelity is 86 ± 4% for 1.5 μs storage time, which is 5000 times the pulse duration. Hence, high fidelity is combined with a large time-bandwidth product. This high performance, with an experimentally simple setup, demonstrates the suitability of the Raman memory for integration into large-scale quantum networks. (paper)

Compact holographic memory and its application to optical pattern recognition

Science.gov (United States)

Chao, Tien-Hsin; Reyes, George F.; Zhou, Hanying

2001-03-01

JPL is developing a high-density, nonvolatile Compact Holographic Data Storage (CHDS) system to enable large- capacity, high-speed, low power consumption, and read/write of data for commercial and space applications. This CHDS system consists of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and high- speed. In this paper, recent technology progress in developing this CHDS at JPL will be presented. The recent applications of the CHDS to optical pattern recognition, as a high-density, high transfer rate memory bank will also be discussed.

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

Science.gov (United States)

Prakash, Amit; Maikap, Siddheswar; Banerjee, Writam; Jana, Debanjan; Lai, Chao-Sung

2013-09-06

Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled 'SET/RESET' current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrOx/AlOx/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>105 cycles), and data retention of >104 s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.

High density matter at RHIC

Indian Academy of Sciences (India)

QCD predicts a phase transition between hadronic matter and a quark-gluon plasma at high energy density. The relativistic heavy ion collider (RHIC) at Brookhaven National Laboratory is a new facility dedicated to the experimental study of matter under extreme conditions. Already the first round of experimental results at ...

Edge operational space for high density/high confinement ELMY H-modes in JET

International Nuclear Information System (INIS)

Sartori, R.; Saibene, G.; Loarte, A.

2002-01-01

This paper discusses how the proximity to the L-H threshold affects the confinement of ELMy H-modes at high density. The largest reduction in confinement at high density is observed at the transition from the Type I to the Type III ELMy regime. At medium plasma triangularity, δ≅0.3 (where δ is the average triangularity at the separatrix), JET experiments show that by increasing the margin above the L-H threshold power and maintaining the edge temperature above the critical temperature for the transition to Type III ELMs, it is possible to avoid the degradation of the pedestal pressure with density, normally observed at lower power. As a result, the range of achievable densities (both in the core and in the pedestal) is increased. At high power above the L-H threshold power the core density was equal to the Greenwald limit with H97≅0.9. There is evidence that a mixed regime of Type I and Type II ELMs has been obtained at this intermediate triangularity, possibly as a result of this increase in density. At higher triangularity, δ≅0.5, the power required to achieve similar results is lower. (author)

Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template

International Nuclear Information System (INIS)

Miura, Atsushi; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Tsukamoto, Rikako; Yoshii, Shigeo

2008-01-01

We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co 3 O 4 ) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented

A Case Study on Neural Inspired Dynamic Memory Management Strategies for High Performance Computing.

Energy Technology Data Exchange (ETDEWEB)

Vineyard, Craig Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Verzi, Stephen Joseph [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-09-01

As high performance computing architectures pursue more computational power there is a need for increased memory capacity and bandwidth as well. A multi-level memory (MLM) architecture addresses this need by combining multiple memory types with different characteristics as varying levels of the same architecture. How to efficiently utilize this memory infrastructure is an unknown challenge, and in this research we sought to investigate whether neural inspired approaches can meaningfully help with memory management. In particular we explored neurogenesis inspired re- source allocation, and were able to show a neural inspired mixed controller policy can beneficially impact how MLM architectures utilize memory.

Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

Science.gov (United States)

Jayanti, Srikant

Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

Working memory predicts the rejection of false memories.

Science.gov (United States)

Leding, Juliana K

2012-01-01

The relationship between working memory capacity (WMC) and false memories in the memory conjunction paradigm was explored. Previous research using other paradigms has shown that individuals high in WMC are not as likely to experience false memories as low-WMC individuals, the explanation being that high-WMC individuals are better able to engage in source monitoring. In the memory conjunction paradigm participants are presented at study with parent words (e.g., eyeglasses, whiplash). At test, in addition to being presented with targets and foils, participants are presented with lures that are composed of previously studied features (e.g., eyelash). It was found that high-WMC individuals had lower levels of false recognition than low-WMC individuals. Furthermore, recall-to-reject responses were analysed (e.g., "I know I didn't see eyelash because I remember seeing eyeglasses") and it was found that high-WMC individuals were more likely to utilise this memory editing strategy, providing direct evidence that one reason that high-WMC individuals are not as prone to false memories is because they are better able to engage in source monitoring.

[Asperger syndrome with highly exceptional calendar memory: a case report].

Science.gov (United States)

Sevik, Ali Emre; Cengel Kültür, Ebru; Demirel, Hilal; Karlı Oğuz, Kader; Akça, Onur; Lay Ergün, Eser; Demir, Başaran

2010-01-01

Some patients with pervasive developmental disorders develop unusual talents, which are characterized as savant syndrome. Herein we present neuropsychological examination and brain imaging (fMRI and brain SPECT) findings of an 18-year-old male with Asperger syndrome and highly unusual calendar memory. Neuropsychological evaluation of the case indicated mild attention, memory, and problem solving deficits, and severe executive function deficits that included conceptualization, category formation, and abstraction. Functional MRI findings showed activation above the baseline level (Psavant syndrome.

A randomised controlled trial investigating the benefits of adaptive working memory training for working memory capacity and attentional control in high worriers.

Science.gov (United States)

Hotton, Matthew; Derakshan, Nazanin; Fox, Elaine

2018-01-01

The process of worry has been associated with reductions in working memory capacity and availability of resources necessary for efficient attentional control. This, in turn, can lead to escalating worry. Recent investigations into working memory training have shown improvements in attentional control and cognitive performance in high trait-anxious individuals and individuals with sub-clinical depression. The current randomised controlled trial investigated the effects of 15 days of adaptive n-back working memory training, or an active control task, on working memory capacity, attentional control and worry in a sample of high worriers. Pre-training, post-training and one-month follow-up measures of working memory capacity were assessed using a Change Detection task, while a Flanker task was used to assess attentional control. A breathing focus task was used as a behavioural measure of worry in addition to a number of self-report assessments of worry and anxiety. Overall there was no difference between the active training and the active control condition with both groups demonstrating similar improvements in working memory capacity and worry, post-training and at follow-up. However, training-related improvements on the n-back task were associated with gains in working memory capacity and reductions in worry symptoms in the active training condition. These results highlight the need for further research investigating the role of individual differences in working memory training. Copyright © 2017. Published by Elsevier Ltd.

Photo-induced optical activity in phase-change memory materials.

Science.gov (United States)

Borisenko, Konstantin B; Shanmugam, Janaki; Williams, Benjamin A O; Ewart, Paul; Gholipour, Behrad; Hewak, Daniel W; Hussain, Rohanah; Jávorfi, Tamás; Siligardi, Giuliano; Kirkland, Angus I

2015-03-05

We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.

Growth limitation of Lemna minor due to high plant density

NARCIS (Netherlands)

Driever, S.M.; Nes, van E.H.; Roijackers, R.M.M.

2005-01-01

The effect of high population densities on the growth rate of Lemna minor (L.) was studied under laboratory conditions at 23°C in a medium with sufficient nutrients. At high population densities, we found a non-linear decreasing growth rate with increasing L. minor density. Above a L. minor biomass

Density-dependent phonoriton states in highly excited semiconductors

International Nuclear Information System (INIS)

Nguyen Hong Quang; Nguyen Minh Khue; Nguyen Que Huong

1995-09-01

The dynamical aspects of the phonoriton state in highly-photoexcited semiconductors is studied theoretically. The effect of the exciton-exciton interaction and nonbosonic character of high-density excitons are taken into account. Using Green's function method and within the Random Phase Approximation it is shown that the phonoriton dispersion and damping are very sensitive to the exciton density, characterizing the excitation degree of semiconductors. (author). 18 refs, 3 figs

A Fully Transparent Resistive Memory for Harsh Environments

KAUST Repository

Yang, Po-Kang

2015-10-12

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

Context-dependent memory traces in the crab's mushroom bodies: Functional support for a common origin of high-order memory centers.

Science.gov (United States)

Maza, Francisco Javier; Sztarker, Julieta; Shkedy, Avishag; Peszano, Valeria Natacha; Locatelli, Fernando Federico; Delorenzi, Alejandro

2016-12-06

The hypothesis of a common origin for the high-order memory centers in bilateral animals is based on the evidence that several key features, including gene expression and neuronal network patterns, are shared across several phyla. Central to this hypothesis is the assumption that the arthropods' higher order neuropils of the forebrain [the mushroom bodies (MBs) of insects and the hemiellipsoid bodies (HBs) of crustaceans] are homologous structures. However, even though involvement in memory processes has been repeatedly demonstrated for the MBs, direct proof of such a role in HBs is lacking. Here, through neuroanatomical and immunohistochemical analysis, we identified, in the crab Neohelice granulata, HBs that resemble the calyxless MBs found in several insects. Using in vivo calcium imaging, we revealed training-dependent changes in neuronal responses of vertical and medial lobes of the HBs. These changes were stimulus-specific, and, like in the hippocampus and MBs, the changes reflected the context attribute of the memory trace, which has been envisioned as an essential feature for the HBs. The present study constitutes functional evidence in favor of a role for the HBs in memory processes, and provides key physiological evidence supporting a common origin of the arthropods' high-order memory centers.

Selectivity in Postencoding Connectivity with High-Level Visual Cortex Is Associated with Reward-Motivated Memory

OpenAIRE

Murty, Vishnu P.; Tompary, Alexa; Adcock, R. Alison; Davachi, Lila

2017-01-01

Reward motivation has been demonstrated to enhance declarative memory by facilitating systems-level consolidation. Although high-reward information is often intermixed with lower reward information during an experience, memory for high value information is prioritized. How is this selectivity achieved? One possibility is that postencoding consolidation processes bias memory strengthening to those representations associated with higher reward. To test this hypothesis, we investigated the influ...

Multiplexed, high density electrophysiology with nanofabricated neural probes.

Directory of Open Access Journals (Sweden)

Jiangang Du

Full Text Available Extracellular electrode arrays can reveal the neuronal network correlates of behavior with single-cell, single-spike, and sub-millisecond resolution. However, implantable electrodes are inherently invasive, and efforts to scale up the number and density of recording sites must compromise on device size in order to connect the electrodes. Here, we report on silicon-based neural probes employing nanofabricated, high-density electrical leads. Furthermore, we address the challenge of reading out multichannel data with an application-specific integrated circuit (ASIC performing signal amplification, band-pass filtering, and multiplexing functions. We demonstrate high spatial resolution extracellular measurements with a fully integrated, low noise 64-channel system weighing just 330 mg. The on-chip multiplexers make possible recordings with substantially fewer external wires than the number of input channels. By combining nanofabricated probes with ASICs we have implemented a system for performing large-scale, high-density electrophysiology in small, freely behaving animals that is both minimally invasive and highly scalable.

Phase Transformation and Shape Memory Effect of Ti-Pd-Pt-Zr High-Temperature Shape Memory Alloys

Science.gov (United States)

Yamabe-Mitarai, Yoko; Takebe, Wataru; Shimojo, Masayuki

2017-12-01

To understand the potential of high-temperature shape memory alloys, we have investigated the phase transformation and shape memory effect of Ti-(50 - x)Pt- xPd-5Zr alloys ( x = 0, 5, and 15 at.%), which present the B2 structure in the austenite phase and B19 structure in the martensite phase. Their phase transformation temperatures are very high; A f and M f of Ti-50Pt are 1066 and 1012 °C, respectively. By adding Zr and Pd, the phase transition temperatures decrease, ranging between 804 and 994 °C for A f and 590 and 865 °C for M f. Even at the high phase transformation temperature, a maximum recovery ratio of 70% was obtained for one cycle in a thermal cyclic test. A work output of 1.2 J/cm3 was also obtained. The recovery ratio obtained by the thermal cyclic test was less than 70% because the recovery strain was training effect was also investigated.

Double trouble at high density:

DEFF Research Database (Denmark)

Gergs, André; Palmqvist, Annemette; Preuss, Thomas G

2014-01-01

Population size is often regulated by negative feedback between population density and individual fitness. At high population densities, animals run into double trouble: they might concurrently suffer from overexploitation of resources and also from negative interference among individuals...... regardless of resource availability, referred to as crowding. Animals are able to adapt to resource shortages by exhibiting a repertoire of life history and physiological plasticities. In addition to resource-related plasticity, crowding might lead to reduced fitness, with consequences for individual life...... history. We explored how different mechanisms behind resource-related plasticity and crowding-related fitness act independently or together, using the water flea Daphnia magna as a case study. For testing hypotheses related to mechanisms of plasticity and crowding stress across different biological levels...

Factors influencing shape memory effect and phase transformation behaviour of Fe-Mn-Si based shape memory alloys

International Nuclear Information System (INIS)

Li, H.; Dunne, D.; Kennon, N.

1999-01-01

The objective of this research work was to investigate the factors influencing the shape memory effect and phase transformation behaviour of three Fe-Mn-Si based shape memory alloys: Fe-28Mn-6Si, Fe-13Mn-5Si-10Cr-6Ni and Fe-20Mn-6Si-7Cr-1Cu. The research results show that the shape memory capacity of Fe-Mn-Si based shape memory alloys varies with annealing temperature, and this effect can be explained in terms of the effect of annealing on γ ε transformation. The nature and concentration of defects in austenite are strongly affected by annealing conditions. A high annealing temperature results in a low density of stacking faults, leading to a low nucleation rate during stress induced γ→ε transformation. The growth of ε martensite plates is favoured rather than the formation of new ε martensite plates. Coarse martensite plates produce high local transformation strains which can be accommodated by local slip deformation, leading to a reduction in the reversibility of the martensitic transformation and to a degradation of the shape memory effect. Annealing at low temperatures (≤673 K) for reasonable times does not eliminate complex defects (dislocation jogs, kinks and vacancy clusters) created by hot and cold working strains. These defects can retard the movement and rearrangement of Shockley partial dislocations, i.e. suppress γ→ε transformation, also leading to a degradation of shape memory effect. Annealing at about 873 K was found to be optimal to form the dislocation structures which are favourable for stress induced martensitic transformation, thus resulting in the best shape memory behaviour. (orig.)

High density data storage principle, technology, and materials

CERN Document Server

Zhu, Daoben

2009-01-01

The explosive increase in information and the miniaturization of electronic devices demand new recording technologies and materials that combine high density, fast response, long retention time and rewriting capability. As predicted, the current silicon-based computer circuits are reaching their physical limits. Further miniaturization of the electronic components and increase in data storage density are vital for the next generation of IT equipment such as ultra high-speed mobile computing, communication devices and sophisticated sensors. This original book presents a comprehensive introduction to the significant research achievements on high-density data storage from the aspects of recording mechanisms, materials and fabrication technologies, which are promising for overcoming the physical limits of current data storage systems. The book serves as an useful guide for the development of optimized materials, technologies and device structures for future information storage, and will lead readers to the fascin...

Shape Memory Polymer Composites of Poly(styrene-b-butadiene-b-styrene Copolymer/Liner Low Density Polyethylene/Fe3O4 Nanoparticles for Remote Activation

Directory of Open Access Journals (Sweden)

Yongkun Wang

2016-11-01

Full Text Available Magnetically sensitive shape memory poly(styrene-b-butadiene-b-styrene copolymer (SBS/liner low density polyethylene (LLDPE composites filled with various contents of Fe3O4 nanoparticles were prepared. The influence of the Fe3O4 nanoparticles content on the thermal properties, mechanical properties, fracture morphology, magnetic behavior, and shape memory effect of SBS/LLDPE/Fe3O4 composites was systematically studied in this paper. The results indicated that homogeneously dispersed Fe3O4 nanoparticles ensured the uniform heat generation and transfer in the alternating magnetic field, and endowed the SBS/LLDPE/Fe3O4 composites with an excellent magnetically responsive shape memory effect. When the shape memory composites were in the alternating magnetic field (f = 60 kHz, H = 21.21 kA·m−1, the best shape recovery ratio reached 99%, the shape retention ratio reached 99.4%, and the shape recovery speed increased significantly with the increment of Fe3O4 nanoparticles. It is anticipated that tagging products with this novel shape memory composite is helpful for the purpose of an intravascular delivery system in Micro-Electro-Mechanical System (MEMS devices.

A Memory Hierarchy Model Based on Data Reuse for Full-Search Motion Estimation on High-Definition Digital Videos

Directory of Open Access Journals (Sweden)

Alba Sandyra Bezerra Lopes

2012-01-01

Full Text Available The motion estimation is the most complex module in a video encoder requiring a high processing throughput and high memory bandwidth, mainly when the focus is high-definition videos. The throughput problem can be solved increasing the parallelism in the internal operations. The external memory bandwidth may be reduced using a memory hierarchy. This work presents a memory hierarchy model for a full-search motion estimation core. The proposed memory hierarchy model is based on a data reuse scheme considering the full search algorithm features. The proposed memory hierarchy expressively reduces the external memory bandwidth required for the motion estimation process, and it provides a very high data throughput for the ME core. This throughput is necessary to achieve real time when processing high-definition videos. When considering the worst bandwidth scenario, this memory hierarchy is able to reduce the external memory bandwidth in 578 times. A case study for the proposed hierarchy, using 32×32 search window and 8×8 block size, was implemented and prototyped on a Virtex 4 FPGA. The results show that it is possible to reach 38 frames per second when processing full HD frames (1920×1080 pixels using nearly 299 Mbytes per second of external memory bandwidth.

Fifth International Conference on High Energy Density Physics

Energy Technology Data Exchange (ETDEWEB)

Beg, Farhat

2017-07-05

The Fifth International Conference on High Energy Density Physics (ICHED 2015) was held in the Catamaran Hotel in San Diego from August 23-27, 2015. This meeting was the fifth in a series which began in 2008 in conjunction with the April meeting of the American Physical Society (APS). The main goal of this conference has been to bring together researchers from all fields of High Energy Density Science (HEDS) into one, unified meeting.

High performance H-mode plasmas at densities above the Greenwald limit

International Nuclear Information System (INIS)

Mahdavi, M.A.; Osborne, T.H.; Leonard, A.W.

2001-01-01

Densities up to 40 percent above the Greenwald limit are reproducibly achieved in high confinement (H ITER89p =2) ELMing H-mode discharges. Simultaneous gas fueling and divertor pumping were used to obtain these results. Confinement of these discharges, similar to moderate density H-mode, is characterized by a stiff temperature profile, and therefore sensitive to the density profile. A particle transport model is presented that explains the roles of divertor pumping and geometry for access to high densities. Energy loss per ELM at high density is a factor of five lower than predictions of an earlier scaling, based on data from lower density discharges. (author)

Novel nanostructured materials for high energy density supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Yuan, C.Z.; Zhang, X.G. [Nanjing Univ. of Aeronautics and Astronautics (China). College of Material Science and Engineering

2010-07-01

Researchers are currently examining methods of improving energy density while not sacrificing the high power density of supercapacitors. In this study, nanostructured materials assembled from nanometer-sized building blocks with mesoporosity were synthesized in order investigate diffusion time, kinetics, and capacitances. Petal-like cobalt hydroxide Co(OH){sub 2} mesocrystals, urchin-like Co(OH){sub 2} and dicobalt tetroxide (Co{sub 2}O{sub 4}) ordered arrays as well as N{sub i}O microspheres were assembled from 0-D nanoparticles, 1-D mesoporous nanowires and nanobelts, and 2-D mesoporous nanopetals. The study showed that all the synthesized nanostructured materials delivered larger energy densities while showing electrochemical stability at high rates.

ON THE ORIGIN OF THE HIGH COLUMN DENSITY TURNOVER IN THE H I COLUMN DENSITY DISTRIBUTION

International Nuclear Information System (INIS)

Erkal, Denis; Gnedin, Nickolay Y.; Kravtsov, Andrey V.

2012-01-01

We study the high column density regime of the H I column density distribution function and argue that there are two distinct features: a turnover at N H I ≈ 10 21 cm –2 , which is present at both z = 0 and z ≈ 3, and a lack of systems above N H I ≈ 10 22 cm –2 at z = 0. Using observations of the column density distribution, we argue that the H I-H 2 transition does not cause the turnover at N H I ≈ 10 21 cm –2 but can plausibly explain the turnover at N H I ∼> 10 22 cm –2 . We compute the H I column density distribution of individual galaxies in the THINGS sample and show that the turnover column density depends only weakly on metallicity. Furthermore, we show that the column density distribution of galaxies, corrected for inclination, is insensitive to the resolution of the H I map or to averaging in radial shells. Our results indicate that the similarity of H I column density distributions at z = 3 and 0 is due to the similarity of the maximum H I surface densities of high-z and low-z disks, set presumably by universal processes that shape properties of the gaseous disks of galaxies. Using fully cosmological simulations, we explore other candidate physical mechanisms that could produce a turnover in the column density distribution. We show that while turbulence within giant molecular clouds cannot affect the damped Lyα column density distribution, stellar feedback can affect it significantly if the feedback is sufficiently effective in removing gas from the central 2-3 kpc of high-redshift galaxies. Finally, we argue that it is meaningful to compare column densities averaged over ∼ kpc scales with those estimated from quasar spectra that probe sub-pc scales due to the steep power spectrum of H I column density fluctuations observed in nearby galaxies.

Detailed sensory memory, sloppy working memory

Directory of Open Access Journals (Sweden)

Ilja G Sligte

2010-10-01

Full Text Available Visual short-term memory (VSTM enables us to actively maintain information in mind for a brief period of time after stimulus disappearance. According to recent studies, VSTM consists of three stages - iconic memory, fragile VSTM, and visual working memory - with increasingly stricter capacity limits and progressively longer lifetimes. Still, the resolution (or amount of visual detail of each VSTM stage has remained unexplored and we test this in the present study. We presented people with a change detection task that measures the capacity of all three forms of VSTM, and we added an identification display after each change trial that required people to identify the pre-change object. Accurate change detection plus pre-change identification requires subjects to have a high-resolution representation of the pre-change object, whereas change detection or identification only can be based on the hunch that something has changed, without exactly knowing what was presented before. We observed that people maintained 6.1 objects in iconic memory, 4.6 objects in fragile VSTM and 2.1 objects in visual working memory. Moreover, when people detected the change, they could also identify the pre-change object on 88 percent of the iconic memory trials, on 71 percent of the fragile VSTM trials and merely on 53 percent of the visual working memory trials. This suggests that people maintain many high-resolution representations in iconic memory and fragile VSTM, but only one high-resolution object representation in visual working memory.

Detailed sensory memory, sloppy working memory.

Science.gov (United States)

Sligte, Ilja G; Vandenbroucke, Annelinde R E; Scholte, H Steven; Lamme, Victor A F

2010-01-01

Visual short-term memory (VSTM) enables us to actively maintain information in mind for a brief period of time after stimulus disappearance. According to recent studies, VSTM consists of three stages - iconic memory, fragile VSTM, and visual working memory - with increasingly stricter capacity limits and progressively longer lifetimes. Still, the resolution (or amount of visual detail) of each VSTM stage has remained unexplored and we test this in the present study. We presented people with a change detection task that measures the capacity of all three forms of VSTM, and we added an identification display after each change trial that required people to identify the "pre-change" object. Accurate change detection plus pre-change identification requires subjects to have a high-resolution representation of the "pre-change" object, whereas change detection or identification only can be based on the hunch that something has changed, without exactly knowing what was presented before. We observed that people maintained 6.1 objects in iconic memory, 4.6 objects in fragile VSTM, and 2.1 objects in visual working memory. Moreover, when people detected the change, they could also identify the pre-change object on 88% of the iconic memory trials, on 71% of the fragile VSTM trials and merely on 53% of the visual working memory trials. This suggests that people maintain many high-resolution representations in iconic memory and fragile VSTM, but only one high-resolution object representation in visual working memory.

Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

KAUST Repository

Wang, Jer-Chyi

2016-11-23

Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.

MoO3 trapping layers with CF4 plasma treatment in flash memory applications

International Nuclear Information System (INIS)

Kao, Chuyan Haur; Chen, Hsiang; Chen, Su-Zhien; Chen, Chian Yu; Lo, Kuang-Yu; Lin, Chun Han

2014-01-01

Highlights: • MoO 3 -based flash memories have been fabricated. • CF4 plasma treatment could enhance good memory performance. • Material analyses confirm that plasma treatment eliminated defects. • Fluorine atoms might fix the dangling bonds. - Abstract: In this research, we used MoO 3 with CF 4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO 3 charge trapping layer memory with suitable CF 4 plasma treatment is promising for future nonvolatile memory applications

Effect of mix proportion of high density concrete on compressive strength, density and radiation absorption

International Nuclear Information System (INIS)

Noor Azreen Masenwat; Mohamad Pauzi Ismail; Suhairy Sani; Ismail Mustapha; Nasharuddin Isa; Mohamad Haniza Mahmud; Mohammad Shahrizan Samsu

2014-01-01

To prevent radiation leaks at nuclear reactors, high-density concrete is used as an absorbent material for radiation from spreading into the environment. High-density concrete is a mixture of cement, sand, aggregate (usually high-density minerals) and water. In this research, hematite stone is used because of its mineral density higher than the granite used in conventional concrete mixing. Mix concrete in this study were divided into part 1 and part 2. In part 1, the concrete mixture is designed with the same ratio of 1: 2: 4 but differentiated in terms of water-cement ratio (0.60, 0.65, 0.70, 0.75, 0.80 ). Whereas, in part 2, the concrete mixture is designed to vary the ratio of 1: 1: 2, 1: 1.5: 3, 1: 2: 3, 1: 3: 6, 1: 2: 6 with water-cement ratio (0.7, 0.8, 0.85, 0.9). In each section, the division has also performed in a mixture of sand and fine sand hematite. Then, the physical characteristics of the density and the compressive strength of the mixture of part 1 and part 2 is measured. Comparisons were also made in terms of absorption of radiation by Cs-137 and Co-60 source for each mix. This paper describes and discusses the relationship between the concrete mixture ratio, the relationship with the water-cement ratio, compressive strength, density, different mixture of sand and fine sand hematite. (author)

High density fuel storage rack

International Nuclear Information System (INIS)

Zezza, L.J.

1980-01-01

High storage density for spent nuclear fuel assemblies in a pool achieved by positioning fuel storage cells of high thermal neutron absorption materials in an upright configuration in a rack. The rack holds the cells at required pitch. Each cell carries an internal fuel assembly support, and most cells are vertically movable in the rack so that they rest on the pool bottom. Pool water circulation through the cells and around the fuel assemblies is permitted by circulation openings at the top and bottom of the cells above and below the fuel assemblies

A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

Science.gov (United States)

Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

2018-03-01

Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Two-dimensional signal processing using a morphological filter for holographic memory

Science.gov (United States)

Kondo, Yo; Shigaki, Yusuke; Yamamoto, Manabu

2012-03-01

Today, along with the wider use of high-speed information networks and multimedia, it is increasingly necessary to have higher-density and higher-transfer-rate storage devices. Therefore, research and development into holographic memories with three-dimensional storage areas is being carried out to realize next-generation large-capacity memories. However, in holographic memories, interference between bits, which affect the detection characteristics, occurs as a result of aberrations such as the deviation of a wavefront in an optical system. In this study, we pay particular attention to the nonlinear factors that cause bit errors, where filters with a Volterra equalizer and the morphologies are investigated as a means of signal processing.

Clock-frequency and temperature margins of a high-temperature superconductor delay-line memory

International Nuclear Information System (INIS)

Hattori, W.; Tahara, S.

1999-01-01

We have developed a 10 GHz 32-bit delay-line memory, using a semiconductor crossbar switch and a YBa 2 Cu 3 O 7-δ coplanar delay line. For use in the high-speed (≥10 GHz) cell-buffer storage of large-throughput (≥1 Tbit/s) asynchronous transfer mode (ATM) switching systems, this memory must be fairly reliable. To evaluate the reliability of the operation, therefore, we measured the clock-frequency and temperature margins and the temperature dependence of the bit-error rate. At 64 K, this memory has a capacity of 32 bits with a clock frequency of 9.89±0.11 GHz. In general, clock frequencies of communication systems are strictly managed so that the margins are less than 10 -6 . Therefore, the frequency margin of this memory (∼2x10 -2 )) is wide enough for use in communication systems. The temperature margin was 71.5±4.3 K at 10 GHz and 33 bits. This memory offered error-free operation (BER -13 ) at 71.5 ±3.5 K. These temperature margins are wide enough to be controlled by a cryocooler. These results show that the memory offers reliability and that it can be applied to high-speed ATM cell-buffer storage. (author)

High Density GEOSAT/GM Altimeter Data

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — The high density Geosat/GM altimeter data south of 30 S have finally arrived. In addition, ERS-1 has completed more than 6 cycles of its 35-day repeat track. These...

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

Science.gov (United States)

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

PGHPF – An Optimizing High Performance Fortran Compiler for Distributed Memory Machines

Directory of Open Access Journals (Sweden)

Zeki Bozkus

1997-01-01

Full Text Available High Performance Fortran (HPF is the first widely supported, efficient, and portable parallel programming language for shared and distributed memory systems. HPF is realized through a set of directive-based extensions to Fortran 90. It enables application developers and Fortran end-users to write compact, portable, and efficient software that will compile and execute on workstations, shared memory servers, clusters, traditional supercomputers, or massively parallel processors. This article describes a production-quality HPF compiler for a set of parallel machines. Compilation techniques such as data and computation distribution, communication generation, run-time support, and optimization issues are elaborated as the basis for an HPF compiler implementation on distributed memory machines. The performance of this compiler on benchmark programs demonstrates that high efficiency can be achieved executing HPF code on parallel architectures.

The creation of high energy densities with antimatter beams

International Nuclear Information System (INIS)

Gibbs, W.R.; Kruk, J.W.; Rice Univ., Houston, TX

1989-01-01

The use of antiprotons (and antideuterons) for the study of the behavior of nuclear matter at high energy density is considered. It is shown that high temperatures and high energy densities can be achieved for small volumes. Also investigated is the strangeness production in antimatter annihilation. It is found that the high rate of Lambda production seen in a recent experiment is easily understood. The Lambda and K-short rapidity distributions are also reproduced by the model considered. 11 refs., 6 figs

Physical principles and current status of emerging non-volatile solid state memories

Science.gov (United States)

Wang, L.; Yang, C.-H.; Wen, J.

2015-07-01

Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

High baryon density from relativistic heavy ion collisions

Energy Technology Data Exchange (ETDEWEB)

Pang, Y.; Kahana, S.H. [Brookhaven National Lab., Upton, NY (United States); Schlagel, T.J. [Brookhaven National Lab., Upton, NY (United States)]|[State Univ. of New York, Stony Brook, NY (United States)

1993-10-01

A quantitative model, based on hadronic physics, is developed and applied to heavy ion collisions at BNL-AGS energies. This model is in excellent agreement with observed particle spectra in heavy ion collisions using Si beams, where baryon densities of three and four times the normal nuclear matter density ({rho}{sub 0}) are reached. For Au on Au collisions, the authors predict the formation of matter at very high densities (up to 10 {rho}{sub 0}).

Serum osteoprotegerin levels and mammographic density among high-risk women.

Science.gov (United States)

Moran, Olivia; Zaman, Tasnim; Eisen, Andrea; Demsky, Rochelle; Blackmore, Kristina; Knight, Julia A; Elser, Christine; Ginsburg, Ophira; Zbuk, Kevin; Yaffe, Martin; Narod, Steven A; Salmena, Leonardo; Kotsopoulos, Joanne

2018-06-01

Mammographic density is a risk factor for breast cancer but the mechanism behind this association is unclear. The receptor activator of nuclear factor κB (RANK)/RANK ligand (RANKL) pathway has been implicated in the development of breast cancer. Given the role of RANK signaling in mammary epithelial cell proliferation, we hypothesized this pathway may also be associated with mammographic density. Osteoprotegerin (OPG), a decoy receptor for RANKL, is known to inhibit RANK signaling. Thus, it is of interest to evaluate whether OPG levels modify breast cancer risk through mammographic density. We quantified serum OPG levels in 57 premenopausal and 43 postmenopausal women using an enzyme-linked immunosorbent assay (ELISA). Cumulus was used to measure percent density, dense area, and non-dense area for each mammographic image. Subjects were classified into high versus low OPG levels based on the median serum OPG level in the entire cohort (115.1 pg/mL). Multivariate models were used to assess the relationship between serum OPG levels and the measures of mammographic density. Serum OPG levels were not associated with mammographic density among premenopausal women (P ≥ 0.42). Among postmenopausal women, those with low serum OPG levels had higher mean percent mammographic density (20.9% vs. 13.7%; P = 0.04) and mean dense area (23.4 cm 2 vs. 15.2 cm 2 ; P = 0.02) compared to those with high serum OPG levels after covariate adjustment. These findings suggest that low OPG levels may be associated with high mammographic density, particularly in postmenopausal women. Targeting RANK signaling may represent a plausible, non-surgical prevention option for high-risk women with high mammographic density, especially those with low circulating OPG levels.

Density Functional Methods for Shock Physics and High Energy Density Science

Science.gov (United States)

Desjarlais, Michael

2017-06-01

Molecular dynamics with density functional theory has emerged over the last two decades as a powerful and accurate framework for calculating thermodynamic and transport properties with broad application to dynamic compression, high energy density science, and warm dense matter. These calculations have been extensively validated against shock and ramp wave experiments, are a principal component of high-fidelity equation of state generation, and are having wide-ranging impacts on inertial confinement fusion, planetary science, and shock physics research. In addition to thermodynamic properties, phase boundaries, and the equation of state, one also has access to electrical conductivity, thermal conductivity, and lower energy optical properties. Importantly, all these properties are obtained within the same theoretical framework and are manifestly consistent. In this talk I will give a brief history and overview of molecular dynamics with density functional theory and its use in calculating a wide variety of thermodynamic and transport properties for materials ranging from ambient to extreme conditions and with comparisons to experimental data. I will also discuss some of the limitations and difficulties, as well as active research areas. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Novel circuits for radiation hardened memories

International Nuclear Information System (INIS)

Haraszti, T.P.; Mento, R.P.; Moyer, N.E.; Grant, W.M.

1992-01-01

This paper reports on implementation of large storage semiconductor memories which combine radiation hardness with high packing density, operational speed, and low power dissipation and require both hardened circuit and hardened process technologies. Novel circuits, including orthogonal shuffle type of write-read arrays, error correction by weighted bidirectional codes and associative iterative repair circuits, are proposed for significant improvements of SRAMs' immunity against the effects of total dose and cosmic particle impacts. The implementation of the proposed circuit resulted in fault-tolerant 40-Mbit and 10-Mbit monolithic memories featuring a data rate of 120 MHz and power dissipation of 880 mW. These experimental serial-parallel memories were fabricated with a nonhardened standard CMOS processing technology, yet provided a total dose hardness of 1 Mrad and a projected SEU rate of 1 x 10 - 12 error/bit/day. Using radiation hardened processing improvements by factors of 10 to 100 are predicted in both total dose hardness and SEU rate

Morphodynamics of supercritical high-density turbidity currents

NARCIS (Netherlands)

Cartigny, M.

2012-01-01

Seafloor and outcrop observations combined with numerical and physical experiments show that turbidity currents are likely 1) to be in a supercritical flow state and 2) to carry high sediment concentrations (being of high-density). The thesis starts with an experimental study of bedforms

Foldable, High Energy Density Lithium Ion Batteries

Science.gov (United States)

Suresh, Shravan

Lithium Ion Batteries (LIBs) have become ubiquitous owing to its low cost, high energy density and, power density. Due to these advantages, LIBs have garnered a lot of attention as the primary energy storage devices in consumer electronics and electric vehicles. Recent advances in the consumer electronics research and, the drive to reduce greenhouse gases have created a demand for a shape conformable, high energy density batteries. This thesis focuses on the aforementioned two aspects of LIBs: (a) shape conformability (b) energy density and provides potential solutions to enhance them. This thesis is divided into two parts viz. (i) achieving foldability in batteries and, (ii) improving its energy density. Conventional LIBs are not shape conformable due to two limitations viz. inelasticity of metallic foils, and delamination of the active materials while bending. In the first part of the thesis (in Chapter 3), this problem is solved by replacing metallic current collector with Carbon Nanotube Macrofilms (CNMs). CNMs are superelastic films comprising of porous interconnected nanotube network. Using Molecular Dynamics (MD) simulation, we found that in the presence of an interconnected nanotube network CNMs can be fully folded. This is because the resultant stress due to bending and, the effective bending angle at the interface is reduced due to the network of nanotubes. Hence, unlike an isolated nanotube (which ruptures beyond 120 degrees of bending), a network of nanotubes can be completely folded. Thus, by replacing metallic current collector foils with CNMs, the flexibility limitation of a conventional LIB can be transcended. The second part of this thesis focusses on enhancing the energy density of LIBs. Two strategies adopted to achieve this goal are (a) removing the dead weight of the batteries, and (b) incorporating high energy density electrode materials. By incorporating CNMs, the weight of the batteries was reduced by 5-10 times due to low mass loading of

Context-dependent memory traces in the crab’s mushroom bodies: Functional support for a common origin of high-order memory centers

Science.gov (United States)

Maza, Francisco Javier; Sztarker, Julieta; Shkedy, Avishag; Peszano, Valeria Natacha; Locatelli, Fernando Federico; Delorenzi, Alejandro

2016-01-01

The hypothesis of a common origin for the high-order memory centers in bilateral animals is based on the evidence that several key features, including gene expression and neuronal network patterns, are shared across several phyla. Central to this hypothesis is the assumption that the arthropods’ higher order neuropils of the forebrain [the mushroom bodies (MBs) of insects and the hemiellipsoid bodies (HBs) of crustaceans] are homologous structures. However, even though involvement in memory processes has been repeatedly demonstrated for the MBs, direct proof of such a role in HBs is lacking. Here, through neuroanatomical and immunohistochemical analysis, we identified, in the crab Neohelice granulata, HBs that resemble the calyxless MBs found in several insects. Using in vivo calcium imaging, we revealed training-dependent changes in neuronal responses of vertical and medial lobes of the HBs. These changes were stimulus-specific, and, like in the hippocampus and MBs, the changes reflected the context attribute of the memory trace, which has been envisioned as an essential feature for the HBs. The present study constitutes functional evidence in favor of a role for the HBs in memory processes, and provides key physiological evidence supporting a common origin of the arthropods’ high-order memory centers. PMID:27856766

Biopolymer-nanocarbon composite electrodes for use as high-energy high-power density electrodes

Science.gov (United States)

Karakaya, Mehmet; Roberts, Mark; Arcilla-Velez, Margarita; Zhu, Jingyi; Podila, Ramakrishna; Rao, Apparao

2014-03-01

Supercapacitors (SCs) address our current energy storage and delivery needs by combining the high power, rapid switching, and exceptional cycle life of a capacitor with the high energy density of a battery. Although activated carbon is extensively used as a supercapacitor electrode due to its inexpensive nature, its low specific capacitance (100-120 F/g) fundamentally limits the energy density of SCs. We demonstrate that a nano-carbon based mechanically robust, electrically conducting, free-standing buckypaper electrode modified with an inexpensive biorenewable polymer, viz., lignin increases the electrode's specific capacitance (~ 600-700 F/g) while maintaining rapid discharge rates. In these systems, the carbon nanomaterials provide the high surface area, electrical conductivity and porosity, while the redox polymers provide a mechanism for charge storage through Faradaic charge transfer. The design of redox polymers and their incorporation into nanomaterial electrodes will be discussed with a focus on enabling high power and high energy density electrodes. Research supported by US NSF CMMI Grant 1246800.

Breast density estimation from high spectral and spatial resolution MRI

Science.gov (United States)

Li, Hui; Weiss, William A.; Medved, Milica; Abe, Hiroyuki; Newstead, Gillian M.; Karczmar, Gregory S.; Giger, Maryellen L.

2016-01-01

Abstract. A three-dimensional breast density estimation method is presented for high spectral and spatial resolution (HiSS) MR imaging. Twenty-two patients were recruited (under an Institutional Review Board--approved Health Insurance Portability and Accountability Act-compliant protocol) for high-risk breast cancer screening. Each patient received standard-of-care clinical digital x-ray mammograms and MR scans, as well as HiSS scans. The algorithm for breast density estimation includes breast mask generating, breast skin removal, and breast percentage density calculation. The inter- and intra-user variabilities of the HiSS-based density estimation were determined using correlation analysis and limits of agreement. Correlation analysis was also performed between the HiSS-based density estimation and radiologists’ breast imaging-reporting and data system (BI-RADS) density ratings. A correlation coefficient of 0.91 (pdensity estimations. An interclass correlation coefficient of 0.99 (pdensity estimations. A moderate correlation coefficient of 0.55 (p=0.0076) was observed between HiSS-based breast density estimations and radiologists’ BI-RADS. In summary, an objective density estimation method using HiSS spectral data from breast MRI was developed. The high reproducibility with low inter- and low intra-user variabilities shown in this preliminary study suggest that such a HiSS-based density metric may be potentially beneficial in programs requiring breast density such as in breast cancer risk assessment and monitoring effects of therapy. PMID:28042590

Magnetic memory effects in high temperature superconductors

International Nuclear Information System (INIS)

Rockenbauer, A.

1989-01-01

Microwave absorption of high temperature oxide superconductors MBa 2 Cu 3 O 7 (M = Y, Er, Dy, Ho, Lu, Tm, Gd) at 77 K have been studied by ESR. In granular samples diamagnetic zero-field resonance and strong ESR baseline hysteresis have been observed: for increasing field sweep - a high, for decreasing one - a low, while in constant field the baseline approaches the middle position with kinetics typical of spin-glasses. The hysteresis amplitude, i.e. the deviation of high and low baselines, possesses maximum at zero field if the sample is cooled down in zero field. In case of field cooling both the diamagnetic resonance and hysteresis maximum are shifted as a function of relative direction of the fields where the samples are cooled and measured, respectively. The shift is caused by the remanent diamagnetism of trapped fluxons. The hysteresis critically depends on the modulation amplitude of magnetic field, and no hysteresis can be observed if the microwave absorption is detected without field modulation. By applying saw-tooth sweep the spin-glass can be driven between two extreme hysteresis states, and the ESR response is rectangular for large saw-tooth amplitude and linear - for small one, while for intermediate amplitudes the recording shows characteristic memory effects. The hysteresis memory is explained in terms of loop distribution of fluxons. In the single crystal the fluxon absorptions are also detected and the separation of fluxon lines can be related to the hysteresis in granular samples. (author)

Resistance switching memory in perovskite oxides

International Nuclear Information System (INIS)

Yan, Z.B.; Liu, J.-M.

2015-01-01

The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons and the stable crystal structure, which brings out multifunctionality such as ferroelectric, multiferroic, superconductor, and colossal magnetoresistance/electroresistance effect, etc. The existence of rich electronic phases, metal–insulator transition and the nonstoichiometric oxygen in perovskite oxide provides good platforms to insight into the resistive switching mechanisms. In this review, we first introduce the general characteristics of the resistance switching effects, the operation methods and the storage media. Then, the experimental evidences of conductive filaments, the transport and switching mechanisms, and the memory performances and enhancing methods of perovskite oxide based filamentary RRAM cells have been summarized and discussed. Subsequently, the switching mechanisms and the performances of the uniform RRAM cells associating with the carrier trapping/detrapping and the ferroelectric polarization switching have been discussed. Finally, the advices and outlook for further investigating the resistance switching and enhancing the memory performances are given

High dislocation density of tin induced by electric current

International Nuclear Information System (INIS)

Liao, Yi-Han; Liang, Chien-Lung; Lin, Kwang-Lung; Wu, Albert T.

2015-01-01

A dislocation density of as high as 10 17 /m 2 in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 10 3 A/ cm 2 . The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining

Preparation and characterization of high-Tc superconducting thin films with high critical current densities

International Nuclear Information System (INIS)

Vase, P.

1991-08-01

The project was carried out in relation to possible cable and electronics applications of high-T c materials. Laser ablation was used as the deposition technique because of its stoichiometry conservation. Films were made in the YBa 2 Cu 3 O 7 compound due to its relatively simple stoichiometry compared to other High-T c compounds. Much attention was paid to the critical current density. A very high critical current density was reached. By using texture analysis by X-ray diffraction, it was found that films with high critical current densities were epitaxial, while films with low critical current densities contained several crystalline orientations. Four techniques for patterning the films were used - photo lithography and wet etch, laser ablation lithography, laser writing and electron beam lithography and ion milling. Sub-micron patterning has been demonstrated without degradation of the superconducting properties. The achieved patterning resolution is sufficient for preparation of many superconducting components. (AB)

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

2011-10-01

The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

International Nuclear Information System (INIS)

Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.

2011-01-01

The impact of iridium-oxide (IrO x ) nano layer thickness on the tunneling oxide and memory performance of IrO x metal nanocrystals in an n-Si/SiO 2 /Al 2 O 3 /IrO x /Al 2 O 3 /IrO x structure has been investigated. A thinner (1.5 nm) IrO x nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO x nanocrystals with a small average diameter of 2.4 nm and a high density of ∼2 x 10 12 /cm 2 have been observed by scanning transmission electron microscopy. The IrO x nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of ±5 V and 7.2 V at a sweeping gate voltage of ± 8 V has been observed for the 1.5 nm-thick IrO x nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO x nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10 13 /cm 2 and 2 x 10 13 /cm 2 , respectively, due to the small size and high-density of IrO x nanocrystals. Excellent program/erase endurance of >10 6 cycles and good retention of 10 4 s with a good memory window of >1.2 V under a small operation voltage of ± 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO x nanocrystals. This study is not only important for the IrO x nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Changing perceptions of hunger on a high nutrient density diet

Directory of Open Access Journals (Sweden)

Glaser Dale

2010-11-01

Full Text Available Abstract Background People overeat because their hunger directs them to consume more calories than they require. The purpose of this study was to analyze the changes in experience and perception of hunger before and after participants shifted from their previous usual diet to a high nutrient density diet. Methods This was a descriptive study conducted with 768 participants primarily living in the United States who had changed their dietary habits from a low micronutrient to a high micronutrient diet. Participants completed a survey rating various dimensions of hunger (physical symptoms, emotional symptoms, and location when on their previous usual diet versus the high micronutrient density diet. Statistical analysis was conducted using non-parametric tests. Results Highly significant differences were found between the two diets in relation to all physical and emotional symptoms as well as the location of hunger. Hunger was not an unpleasant experience while on the high nutrient density diet, was well tolerated and occurred with less frequency even when meals were skipped. Nearly 80% of respondents reported that their experience of hunger had changed since starting the high nutrient density diet, with 51% reporting a dramatic or complete change in their experience of hunger. Conclusions A high micronutrient density diet mitigates the unpleasant aspects of the experience of hunger even though it is lower in calories. Hunger is one of the major impediments to successful weight loss. Our findings suggest that it is not simply the caloric content, but more importantly, the micronutrient density of a diet that influences the experience of hunger. It appears that a high nutrient density diet, after an initial phase of adjustment during which a person experiences "toxic hunger" due to withdrawal from pro-inflammatory foods, can result in a sustainable eating pattern that leads to weight loss and improved health. A high nutrient density diet provides

High power density yeast catalyzed microbial fuel cells

Science.gov (United States)

Ganguli, Rahul

Microbial fuel cells leverage whole cell biocatalysis to convert the energy stored in energy-rich renewable biomolecules such as sugar, directly to electrical energy at high efficiencies. Advantages of the process include ambient temperature operation, operation in natural streams such as wastewater without the need to clean electrodes, minimal balance-of-plant requirements compared to conventional fuel cells, and environmentally friendly operation. These make the technology very attractive as portable power sources and waste-to-energy converters. The principal problem facing the technology is the low power densities compared to other conventional portable power sources such as batteries and traditional fuel cells. In this work we examined the yeast catalyzed microbial fuel cell and developed methods to increase the power density from such fuel cells. A combination of cyclic voltammetry and optical absorption measurements were used to establish significant adsorption of electron mediators by the microbes. Mediator adsorption was demonstrated to be an important limitation in achieving high power densities in yeast-catalyzed microbial fuel cells. Specifically, the power densities are low for the length of time mediator adsorption continues to occur. Once the mediator adsorption stops, the power densities increase. Rotating disk chronoamperometry was used to extract reaction rate information, and a simple kinetic expression was developed for the current observed in the anodic half-cell. Since the rate expression showed that the current was directly related to microbe concentration close to the electrode, methods to increase cell mass attached to the anode was investigated. Electrically biased electrodes were demonstrated to develop biofilm-like layers of the Baker's yeast with a high concentration of cells directly connected to the electrode. The increased cell mass did increase the power density 2 times compared to a non biofilm fuel cell, but the power density

The Influence of Decreased Levels of High Density Lipoprotein ...

African Journals Online (AJOL)

very low density lipoprotein cholesterol, and triglyceride were assayed. ... Abiodun and Gwarzo: Association of high density lipoprotein cholesterol with haemolysis in sickle cell disease ... analyses were carried out to determine the correlation.

High Power Density Power Electronic Converters for Large Wind Turbines

DEFF Research Database (Denmark)

Senturk, Osman Selcuk

. For these VSCs, high power density is required due to limited turbine nacelle space. Also, high reliability is required since maintenance cost of these remotely located wind turbines is quite high and these turbines operate under harsh operating conditions. In order to select a high power density and reliability......In large wind turbines (in MW and multi-MW ranges), which are extensively utilized in wind power plants, full-scale medium voltage (MV) multi-level (ML) voltage source converters (VSCs) are being more preferably employed nowadays for interfacing these wind turbines with electricity grids...... VSC solution for wind turbines, first, the VSC topology and the switch technology to be employed should be specified such that the highest possible power density and reliability are to be attained. Then, this qualitative approach should be complemented with the power density and reliability...

High density implosion experiments at Nova

International Nuclear Information System (INIS)

Cable, M.D.; Hatchett, S.P.; Nelson, M.B.; Lerche, R.A.; Murphy, T.J.; Ress, D.B.

1994-01-01

Deuterium filled glass microballoons are used as indirectly driven targets for implosion experiments at the Nova Laser Fusion Facility. High levels of laser precision were required to achieve fuel densities and convergences to an ignition scale hot spot. (AIP) copyright 1994 American Institute of Physics

An integrative view of storage of low- and high-level visual dimensions in visual short-term memory.

Science.gov (United States)

Magen, Hagit

2017-03-01

Efficient performance in an environment filled with complex objects is often achieved through the temporal maintenance of conjunctions of features from multiple dimensions. The most striking finding in the study of binding in visual short-term memory (VSTM) is equal memory performance for single features and for integrated multi-feature objects, a finding that has been central to several theories of VSTM. Nevertheless, research on binding in VSTM focused almost exclusively on low-level features, and little is known about how items from low- and high-level visual dimensions (e.g., colored manmade objects) are maintained simultaneously in VSTM. The present study tested memory for combinations of low-level features and high-level representations. In agreement with previous findings, Experiments 1 and 2 showed decrements in memory performance when non-integrated low- and high-level stimuli were maintained simultaneously compared to maintaining each dimension in isolation. However, contrary to previous findings the results of Experiments 3 and 4 showed decrements in memory performance even when integrated objects of low- and high-level stimuli were maintained in memory, compared to maintaining single-dimension objects. Overall, the results demonstrate that low- and high-level visual dimensions compete for the same limited memory capacity, and offer a more comprehensive view of VSTM.

Reversibility in martensitic transformation and shape memory in high Mn ferrous alloys

International Nuclear Information System (INIS)

Tomota, Y.

2000-01-01

The reversibility of austenite (γ : fcc) epsilon (ε : hcp) martensitic transformation and shape memory effect in high Mn ferrous alloys are discussed. A particular emphasis is put on the ε → γ reverse transformation behavior in two poly-crystalline alloys, Fe-24Mn and Fe-24Mn-6Si, where the latter exhibits excellent shape memory while the former shows poor memory although their forward γ → ε transformation behavior is quite similar. TEM in situ observations have revealed that the motion of Shockley partial dislocations during ε → γ reverse transformation is different from each other in these two alloys. The influence of alloying elements on the shape memory effect can be related to solid solution hardening of austenite, suggesting an important role of internal stress. The effect of training on enhancing the shape memory is explained by such an internal stress distribution associated with the formation of very thin, i.e., nano-scale ε/γ lamellae. (orig.)

Working Memory Load and Reminder Effect on Event-Based Prospective Memory of High- and Low-Achieving Students in Math.

Science.gov (United States)

Chen, Youzhen; Lian, Rong; Yang, Lixian; Liu, Jianrong; Meng, Yingfang

The effects of working memory (WM) demand and reminders on an event-based prospective memory (PM) task were compared between students with low and high achievement in math. WM load (1- and 2-back tasks) was manipulated as a within-subject factor and reminder (with or without reminder) as a between-subject factor. Results showed that high-achieving students outperformed low-achieving students on all PM and n-back tasks. Use of a reminder improved PM performance and thus reduced prospective interference; the performance of ongoing tasks also improved for all students. Both PM and n-back performances in low WM load were better than in high WM load. High WM load had more influence on low-achieving students than on high-achieving students. Results suggest that low-achieving students in math were weak at PM and influenced more by high WM load. Thus, it is important to train these students to set up an obvious reminder for their PM and improve their WM.

Analysis of simultaneous multi-bit induced by a cosmic ray for onboard memory

International Nuclear Information System (INIS)

Ono, Takashi; Mori, Masato

1987-01-01

Accompanying the development of intelligent onboard equipment using high density memories, the soft-error phenomenon, which is the bit upset induced by a cosmic ray, must be investigated. Especially, the simultaneous multi-bit error (SME) induced by a cosmic ray negligible on earth becomes remarkable in space use. This paper entimates the SME occurrence rate of memory chip by computer simulations and describes the results of the SME experiments using a cyclotron. The computer simulation and experiment results confirm the SME occurrence and show that layout of memory cells is important for the probability of SME occurrence. (author)

High-energy density physics at Los Alamos

International Nuclear Information System (INIS)

Byrnes, P.; Younger, S.M.

1993-03-01

This brochure describes the facilities of the Above Ground Experiments II (AGEX II) and the Inertial Confinement Fusion (ICF) programs at Los Alamo. Combined, these programs represent, an unparalleled capability to address important issues in high-energy density physics that are critical to the future defense, energy, and research needs of th e United States. The mission of the AGEX II program at Los Alamos is to provide additional experimental opportunities for the nuclear weapons program. For this purpose we have assembled at Los Alamos the broadest array of high-energy density physics facilities of any laboratory in the world. Inertial confinement fusion seeks to achieve thermonuclear burn on a laboratory scale through the implosion of a small quantity of deuterium and tritium fuel to very high Pressure and temperature.The Los Alamos ICF program is focused on target physics. With the largest scientific computing center in the world, We can perform calculations of unprecedented sophistication and precision. We field experiments at facilities worldwide-including our own Trident and Mercury lasers-to confirm our understanding and to provide the necessary data base to proceed toward the historic goal of controlled fusion in the laboratory. In addition to direct programmatic high-energy density physics is a nc scientific endeavor in itself. The ultrahigh magnetic fields produced in our high explosive pulsed-power generators can be used in awide variety of solid state physics and temperature superconductor studies. The structure and dynamics of planetary atmospheres can be simulated through the compression of gas mixtures

Workshop on High Power ICH Antenna Designs for High Density Tokamaks

Science.gov (United States)

Aamodt, R. E.

1990-02-01

A workshop in high power ICH antenna designs for high density tokamaks was held to: (1) review the data base relevant to the high power heating of high density tokamaks; (2) identify the important issues which need to be addressed in order to ensure the success of the ICRF programs on CIT and Alcator C-MOD; and (3) recommend approaches for resolving the issues in a timely realistic manner. Some specific performance goals for the antenna system define a successful design effort. Simply stated these goals are: couple the specified power per antenna into the desired ion species; produce no more than an acceptable level of RF auxiliary power induced impurities; and have a mechanical structure which safely survives the thermal, mechanical and radiation stresses in the relevant environment. These goals are intimately coupled and difficult tradeoffs between scientific and engineering constraints have to be made.

Probing electron density across Ar{sup +} irradiation-induced self-organized TiO{sub 2−x} nanochannels for memory application

Energy Technology Data Exchange (ETDEWEB)

Barman, A.; Saini, C. P.; Ghosh, S. K.; Dhar, S.; Kanjilal, A., E-mail: aloke.kanjilal@snu.edu.in [Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh 201314 (India); Sarkar, P. K.; Roy, A. [Department of Physics, National Institute of Technology, Silchar, Assam 788010 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

2016-06-13

The variation of electron density in TiO{sub 2−x} nanochannels, exhibiting resistive switching phenomenon, produced by Ar{sup +} ion-irradiation at the threshold fluence of 5 × 10{sup 16} ions/cm{sup 2} is demonstrated by X-ray reflectivity (XRR). The transmission electron microscopy reveals the formation of nanochannels, while the energy dispersive X-ray spectroscopy confirms Ti enrichment near the surface due to ion-irradiation, in consistent with the increase in electron density by XRR measurements. Such a variation in Ti concentration indicates the evolution of oxygen vacancies (OVs) along the TiO{sub 2−x} nanochannels, and thus paves the way to explain the operation and performance of the Pt/TiO{sub 2−x}/Pt-based memory devices via OV migration.

Memory illusion in high-functioning autism and Asperger's disorder.

Science.gov (United States)

Kamio, Yoko; Toichi, Motomi

2007-05-01

In this study, 13 individuals with high-functioning autism (HFA), 15 individuals with Asperger's disorder (AD), and age-, and IQ-matched controls were presented a list of sentences auditorily. Participants then evaluated semantically related but new sentences and reported whether they were old or new. The total rates of false recognition for semantically related sentences were similar among the three groups. Nevertheless, memory illusion on some aspects was reduced in HFA participants. These results suggest that HFA have difficulties in semantic association. Although individuals with AD showed no quantitative abnormalities of memory illusion, some contributing factors were atypical. These findings are discussed in terms of schema theory, enhanced perceptual processing hypothesis, and weak central coherence hypothesis.

Cell characteristics of a multiple alloy nano-dots memory structure

International Nuclear Information System (INIS)

Bea, Ji Chel; Lee, Kang-Wook; Tanaka, Tetsu; Koyanagi, Mitsumasa; Song, Yun Heub; Lee, Gae-Hun

2009-01-01

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (∼5.2 eV) and extremely high dot density (∼1.2 × 10 13 cm −2 ) was fabricated. Its structural effect for multiple layers was evaluated and compared to the one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with two to four multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler–Nordheim (FN) tunneling could be a candidate structure for future flash memory

Plasma Diagnostics in High Density Reactors

International Nuclear Information System (INIS)

Daltrini, A. M.; Moshkalyov, S.; Monteiro, M. J. R.; Machida, M.; Kostryukov, A.; Besseler, E.; Biasotto, C.; Diniz, J. A.

2006-01-01

Langmuir electric probes and optical emission spectroscopy diagnostics were developed for applications in high density plasmas. These diagnostics were employed in two plasma sources: an electron cyclotron resonance (ECR) plasma and an RF driven inductively coupled plasma (ICP) plasma. Langmuir probes were tested using a number of probing dimensions, probe tip materials, circuits for probe bias and filters. Then, the results were compared with the optical spectroscopy measurements. With these diagnostics, analyses of various plasma processes were performed in both reactors. For example, it has been shown that species like NH radicals generated in gas phase can have critical impact on films deposited by ECR plasmas. In the ICP source, plasmas in atomic and molecular gases were shown to have different spatial distributions, likely due to nonlocal electron heating. The low-to-high density transitions in the ICP plasma were also studied. The role of metastables is shown to be significant in Ar plasmas, in contrast to plasmas with additions of molecular gases

Possible new form of matter at high density

International Nuclear Information System (INIS)

Lee, T.D.

1974-01-01

As a preliminary to discussion of the possibility of new forms of matter at high density, questions relating to the vacuum and vacuum excitation are considered. A quasi-classical approach to the development of abnormal nuclear states is undertaken using a Fermi gas of nucleons of uniform density. Discontinuous transitions are considered in the sigma model (tree approximation) followed by brief consideration of higher order loop diagrams. Production and detection of abnormal nuclear states are discussed in the context of high energy heavy ion collisions. Remarks are made on motivation for such research. 8 figures

The high density effects in the Drell-Yan process

International Nuclear Information System (INIS)

Betemps, M.A.; Gay Ducati, M.B.; Ayala Filho, A.L.

2003-01-01

The high density effects in the Drell-Yan process (q q-bar → γ * →l + l - ) are investigated for pA collisions at RHIC and LHC energies. In particular, we use a set of nuclear parton distributions that describes the present nuclear eA and pA data in the DGLAP approach including the high density effects introduced in the perturbative Glauber-Mueller approach. (author)

BCS Theory of Hadronic Matter at High Densities

DEFF Research Database (Denmark)

Bohr, Henrik; Panda, Prafulla K.; Providencia, Constanca

2012-01-01

The equilibrium between the so-called 2SC and CFL phases of strange quark matter at high densities is investigated in the framework of a simple schematic model of the NJL type. Equal densities are assumed for quarks u, d and s. The 2SC phase is here described by a color-flavor symmetric state, in...

Sr-doped Lanthanum Nickelate Nanofibers for High Energy Density Supercapacitors

International Nuclear Information System (INIS)

Cao, Yi; Lin, Baoping; Sun, Ying; Yang, Hong; Zhang, Xueqin

2015-01-01

Highlights: • The electrode made by LNF-0.7 possessed excellent performance (719 F g −1 ) at Na 2 SO 4 electrolyte • LNF-0.7//LNF-0.7 symmetric supercapacitor device were firstly prepared • The maximum energy density of 81.4 Wh·kg −1 are achieved at a power density of 500W·kg −1 • This symmetric supercapacitor also shows an excellent cycling life - Abstract: The series La x Sr 1−x NiO 3−δ (0.3≤x≤1) nanofibers (LNF-x) samples are prepared by using electrospun method. We investigate the structure and the electrochemical properties of LNF-x in detail. As a result, LNF-x nanofibers present a perovskite structure, and the LNF-0.7 sample with high specific surface area display remarkable performance as an electrode material for supercapacitors. The maximum specific capacitance value of 719 F·g −1 at a current density of 2 A·g −1 , which retains 505 F·g −1 at a high current density of 20 A·g −1 , is obtained for LNF-0.7 electrode in 1 M Na 2 SO 4 aqueous electrolyte. Moreover, the LNF-0.7//LNF-0.7 symmetric supercapacitor device using 1 M Na 2 SO 4 aqueous solution is successfully demonstrated. The capacitor device can operate at a cell voltage as high as 2 V, and it exhibits an energy density of 30.5 Wh·kg −1 at a high power density of 10 kW·kg −1 and a high energy density of 81.4 Wh·kg −1 at a low power density of 500 W·kg −1 . More importantly, this symmetric supercapacitor also shows an excellent cycling performance with 90% specific capacitance retention after 2000 charging and discharging cycles. Those results offer a suitable design of electrode materials for high-performance supercapacitors

High-Stacking-Density, Superior-Roughness LDH Bridged with Vertically Aligned Graphene for High-Performance Asymmetric Supercapacitors.

Science.gov (United States)

Guo, Wei; Yu, Chang; Li, Shaofeng; Yang, Juan; Liu, Zhibin; Zhao, Changtai; Huang, Huawei; Zhang, Mengdi; Han, Xiaotong; Niu, Yingying; Qiu, Jieshan

2017-10-01

The high-performance electrode materials with tuned surface and interface structure and functionalities are highly demanded for advanced supercapacitors. A novel strategy is presented to conFigure high-stacking-density, superior-roughness nickel manganese layered double hydroxide (LDH) bridged by vertically aligned graphene (VG) with nickel foam (NF) as the conductive collector, yielding the LDH-NF@VG hybrids for asymmetric supercapacitors. The VG nanosheets provide numerous electron transfer channels for quick redox reactions, and well-developed open structure for fast mass transport. Moreover, the high-stacking-density LDH grown and assembled on VG nanosheets result in a superior hydrophilicity derived from the tuned nano/microstructures, especially microroughness. Such a high stacking density with abundant active sites and superior wettability can be easily accessed by aqueous electrolytes. Benefitting from the above features, the LDH-NF@VG can deliver a high capacitance of 2920 F g -1 at a current density of 2 A g -1 , and the asymmetric supercapacitor with the LDH-NF@VG as positive electrode and activated carbon as negative electrode can deliver a high energy density of 56.8 Wh kg -1 at a power density of 260 W kg -1 , with a high specific capacitance retention rate of 87% even after 10 000 cycles. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Edge density profiles in high-performance JET plasmas

International Nuclear Information System (INIS)

Summers, D.D.R.; Viaccoz, B.; Vince, J.

1997-01-01

Detailed electron density profiles of the scrape-off layer in high-performance JET plasmas (plasma current, I p nbi ∝17 MW) have been measured by means of a lithium beam diagnostic system featuring high spatial resolution [Kadota (1978)[. Measurements were taken over a period of several seconds, allowing examination of the evolution of the edge profile at a location upstream from the divertor target. The data clearly show the effects of the H-mode transition - an increase in density near the plasma separatrix and a reduction in density scrape-off length. The profiles obtained under various plasma conditions are compared firstly with data from other diagnostics, located elsewhere in the vessel, and also with the predictions of an 'onion-skin' model (DIVIMP), which used, as initial parameters, data from an array of probes located in the divertor target. (orig.)

High Density Lipoprotein and it's Dysfunction.

Science.gov (United States)

Eren, Esin; Yilmaz, Necat; Aydin, Ozgur

2012-01-01

Plasma high-density lipoprotein cholesterol(HDL-C) levels do not predict functionality and composition of high-density lipoprotein(HDL). Traditionally, keeping levels of low-density lipoprotein cholesterol(LDL-C) down and HDL-C up have been the goal of patients to prevent atherosclerosis that can lead to coronary vascular disease(CVD). People think about the HDL present in their cholesterol test, but not about its functional capability. Up to 65% of cardiovascular death cannot be prevented by putative LDL-C lowering agents. It well explains the strong interest in HDL increasing strategies. However, recent studies have questioned the good in using drugs to increase level of HDL. While raising HDL is a theoretically attractive target, the optimal approach remains uncertain. The attention has turned to the quality, rather than the quantity, of HDL-C. An alternative to elevations in HDL involves strategies to enhance HDL functionality. The situation poses an opportunity for clinical chemists to take the lead in the development and validation of such biomarkers. The best known function of HDL is the capacity to promote cellular cholesterol efflux from peripheral cells and deliver cholesterol to the liver for excretion, thereby playing a key role in reverse cholesterol transport (RCT). The functions of HDL that have recently attracted attention include anti-inflammatory and anti-oxidant activities. High antioxidant and anti-inflammatory activities of HDL are associated with protection from CVD.This review addresses the current state of knowledge regarding assays of HDL functions and their relationship to CVD. HDL as a therapeutic target is the new frontier with huge potential for positive public health implications.

Martensitic transformations and the shape memory effect in Ti-Zr-Nb-Al high-temperature shape memory alloys

Energy Technology Data Exchange (ETDEWEB)

Zhang, Fei; Yu, Zhiguo; Xiong, Chengyang [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China); Qu, Wentao; Yuan, Bifei [School of Mechanical Engineering, Xi’an Shiyou University, Xi’an 710065 (China); Wang, Zhenguo [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China); Li, Yan, E-mail: liyan@buaa.edu.cn [School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Aerospace Materials and Performance (Ministry of Education), Beihang University, Beijing 100191 (China)

2017-01-02

The microstructures, phase transformations, mechanical properties and shape memory effect of Ti-20Zr-10Nb-xAl (x=1, 2, 3, 4 at%) alloys were investigated. The X-ray diffraction results show that the alloys are composed of a single martensitic α″-phase and that the corresponding unit cell volume decreases with increasing Al content. The reverse martensitic transformation start temperature (A{sub s}) of the Ti-20Zr-10Nb-Al alloy is 534 K and decreases with increasing Al content. The addition of Al results in solid solution strengthening and grain refinement strengthening, thus improving the mechanical properties and the shape memory effect of the Ti-20Zr-10 Nb-xAl alloys. The Ti-20Zr-10Nb-3Al alloy shows the greatest shape memory strain (3.2%) and the largest tensile strain (17.6%) as well as a very high tensile strength (886 MPa).

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

Science.gov (United States)

Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

2007-04-01

Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

FPGA based high-performance multi-channel analyzer with local histogram memory

International Nuclear Information System (INIS)

Kulkarni, C.P.; Vaidya, P.P.; Paulson, M.

2004-01-01

Modern nuclear spectroscopy systems demand for a Multi-Channel Analyzer (MCA) with higher resolution, faster speed and other advanced features. The MCA described here is targeted for such demanding applications. The MCA has an in-built local histogram memory and a memory management unit integrated in an FPGA (Field Programmable Gate Array) chip. In addition to the integrated low power digital circuitry, the system utilizes state of the art advanced analog circuits like low power, high speed and high precision comparators, op-amps, ADC and DAC. The operating resolution is selectable from 256 channels to 16384 channels for pulse height analysis. It supports high count rate applications (typically 100 KHz) without significant dead time penalty. It can have an USB bus interface with simple changes. In general, the MCA gives a high performance, compact and low power alternative for portable and battery operated systems as well as for high end laboratory instruments. (author)

Exploiting NiTi shape memory alloy films in design of tunable high frequency microcantilever resonators

Science.gov (United States)

Stachiv, I.; Sittner, P.; Olejnicek, J.; Landa, M.; Heller, L.

2017-11-01

Shape memory alloy (SMA) films are very attractive materials for microactuators because of their high energy density. However, all currently developed SMA actuators utilize martensitic transformation activated by periodically generated heating and cooling; therefore, they have a slow actuation speed, just a few Hz, which restricts their use in most of the nanotechnology applications such as high frequency microcantilever based physical and chemical sensors, atomic force microscopes, or RF filters. Here, we design tunable high frequency SMA microcantilevers for nanotechnology applications. They consist of a phase transforming NiTi SMA film sputtered on the common elastic substrate material; in our case, it is a single-crystal silicon. The reversible tuning of microcantilever resonant frequencies is then realized by intentionally changing the Young's modulus and the interlayer stress of the NiTi film by temperature, while the elastic substrate guarantees the high frequency actuation (up to hundreds of kHz) of the microcantilever. The experimental results qualitatively agree with predictions obtained from the dedicated model based on the continuum mechanics theory and a phase characteristic of NiTi. The present design of SMA microcantilevers expands the capability of current micro-/nanomechanical resonators by enabling tunability of several consecutive resonant frequencies.

Vigilance and iconic memory in children at high risk for alcoholism.

Science.gov (United States)

Steinhauer, S R; Locke, J; Hill, S Y

1997-07-01

Previous studies report reduced visual event-related potential (ERP) amplitudes in young males at high risk for alcoholism. These findings could involve difficulties at several stages of visual processing. This study was aimed at examining vigilance performance and iconic memory functions in children at high risk or low risk for alcoholism. Sustained vigilance and retrieval from iconic memory were evaluated in 54 (29 male) white children at high risk and 47 (25 male) white children at low risk for developing alcoholism. Children were also grouped according to gender and age (younger: 8-12 years; older: 13-18 years). No differences is visual sensitivity, response criterion or reaction time were associated with risk status on the degraded visual stimulus version of the Continuous Performance Test. For the Span of Apprehension, no differences were found due to risk status when only 1 or 5 distractors were presented, although with 9 distractors a significant effect of risk status was found when it was tested as an interaction with gender and age (decreased accuracy for older high-risk boys compared to older low-risk boys). These findings suggest that ERP deviations are not attributable to stages of visual processing deficits, but represent difficulty involving more complex utilization of information. Implications of these results are that the differences between high- and low-risk children that have been reported previously for visual ERP components (e.g., P300) are not attributable to deficits of attentional or iconic memory mechanisms.

Workshop on high power ICH antenna designs for high density tokamaks

International Nuclear Information System (INIS)

Aamodt, R.E.

1990-01-01

A workshop in high power ICH antenna designs for high density tokamaks was held in Boulder, Colorado on January 31 through February 2, 1990. The purposes of the workshop were to: (1) review the data base relevant to the high power heating of high density tokamaks; (2) identify the important issues which need to be addressed in order to ensure the success of the ICRF programs on CIT and Alcator C-MOD; and (3) recommend approaches for resolving the issues in a timely realistic manner. Some specific performance goals for the antenna system define a successful design effort. Simply stated these goals are: couple the specified power per antenna into the desired ion species; produce no more than an acceptable level of rf auxiliary power induced impurities; and have a mechanical structure which safely survives the thermal, mechanical and radiation stresses in the relevant environment. These goals are intimately coupled and difficult tradeoffs between scientific and engineering constraints have to be made

Relativistic many-body theory of high density matter

International Nuclear Information System (INIS)

Chin, S.A.

1977-01-01

A fully relativistic quantum many-body theory is applied to the study of high-density matter. The latter is identified with the zero-temperature ground state of a system of interacting baryons. In accordance with the observed short-range repulsive and long-range attractive character of the nucleon--nucleon force, baryons are described as interacting with each other via a massive scalar and a massive vector meson exchange. In the Hartree approximation, the theory yields the same result as the mean-field theory, but with additional vacuum fluctuation corrections. The resultant equation of state for neutron matter is used to determine properties of neutron stars. The relativistic exchange energy, its corresponding single-particle excitation spectrum, and its effect on the neutron matter equation of state, are calculated. The correlation energy from summing the set of ring diagrams is derived directly from the energy-momentum tensor, with renormalization carried out by adding counterterms to the original Lagrangian and subtracting purely vacuum expectation values. Terms of order g 4 lng 2 are explicitly given. Effects of scalar-vector mixing are discussed. Collective modes corresponding to macroscopic density fluctuation are investigated. Two basic modes are found, a plasma-like mode and zero sound, with the latter dominant at high density. The stability and damping of these modes are studied. Last, the effect of vacuum polarization in high-density matter is examined

High-Fidelity Visual Long-Term Memory within an Unattended Blink of an Eye.

Science.gov (United States)

Kuhbandner, Christof; Rosas-Corona, Elizabeth A; Spachtholz, Philipp

2017-01-01

What is stored in long-term memory from current sensations is a question that has attracted considerable interest. Over time, several prominent theories have consistently proposed that only attended sensory information leaves a durable memory trace whereas unattended information is not stored beyond the current moment, an assumption that seems to be supported by abundant empirical evidence. Here we show, by using a more sensitive memory test than in previous studies, that this is actually not true. Observers viewed a rapid stream of real-world object pictures overlapped by words (presentation duration per stimulus: 500 ms, interstimulus interval: 200 ms), with the instruction to attend to the words and detect word repetitions, without knowing that their memory would be tested later. In a surprise two-alternative forced-choice recognition test, memory for the unattended object pictures was tested. Memory performance was substantially above chance, even when detailed feature knowledge was necessary for correct recognition, even when tested 24 h later, and even although participants reported that they do not have any memories. These findings suggests that humans have the ability to store at high speed detailed copies of current visual stimulations in long-term memory independently of current intentions and the current attentional focus.

High-Fidelity Visual Long-Term Memory within an Unattended Blink of an Eye

Directory of Open Access Journals (Sweden)

Christof Kuhbandner

2017-10-01

Full Text Available What is stored in long-term memory from current sensations is a question that has attracted considerable interest. Over time, several prominent theories have consistently proposed that only attended sensory information leaves a durable memory trace whereas unattended information is not stored beyond the current moment, an assumption that seems to be supported by abundant empirical evidence. Here we show, by using a more sensitive memory test than in previous studies, that this is actually not true. Observers viewed a rapid stream of real-world object pictures overlapped by words (presentation duration per stimulus: 500 ms, interstimulus interval: 200 ms, with the instruction to attend to the words and detect word repetitions, without knowing that their memory would be tested later. In a surprise two-alternative forced-choice recognition test, memory for the unattended object pictures was tested. Memory performance was substantially above chance, even when detailed feature knowledge was necessary for correct recognition, even when tested 24 h later, and even although participants reported that they do not have any memories. These findings suggests that humans have the ability to store at high speed detailed copies of current visual stimulations in long-term memory independently of current intentions and the current attentional focus.

Variable kernel density estimation in high-dimensional feature spaces

CSIR Research Space (South Africa)

Van der Walt, Christiaan M

2017-02-01

Full Text Available Estimating the joint probability density function of a dataset is a central task in many machine learning applications. In this work we address the fundamental problem of kernel bandwidth estimation for variable kernel density estimation in high...

Remapping high-capacity, pre-attentive, fragile sensory memory.

Science.gov (United States)

Zerr, Paul; Gayet, Surya; Mulder, Kees; Pinto, Yaïr; Sligte, Ilja; Van der Stigchel, Stefan

2017-11-21

Humans typically make several saccades per second. This provides a challenge for the visual system as locations are largely coded in retinotopic (eye-centered) coordinates. Spatial remapping, the updating of retinotopic location coordinates of items in visuospatial memory, is typically assumed to be limited to robust, capacity-limited and attention-demanding working memory (WM). Are pre-attentive, maskable, sensory memory representations (e.g. fragile memory, FM) also remapped? We directly compared trans-saccadic WM (tWM) and trans-saccadic FM (tFM) in a retro-cue change-detection paradigm. Participants memorized oriented rectangles, made a saccade and reported whether they saw a change in a subsequent display. On some trials a retro-cue indicated the to-be-tested item prior to probe onset. This allowed sensory memory items to be included in the memory capacity estimate. The observed retro-cue benefit demonstrates a tFM capacity considerably above tWM. This provides evidence that some, if not all sensory memory was remapped to spatiotopic (world-centered, task-relevant) coordinates. In a second experiment, we show backward masks to be effective in retinotopic as well as spatiotopic coordinates, demonstrating that FM was indeed remapped to world-centered coordinates. Together this provides conclusive evidence that trans-saccadic spatial remapping is not limited to higher-level WM processes but also occurs for sensory memory representations.

A pipeline of associative memory boards for track finding

CERN Document Server

Annovi, A; Bardi, A; Carosi, R; Dell'Orso, Mauro; Giannetti, P; Iannaccone, G; Morsani, F; Pietri, M; Varotto, G

2000-01-01

We present a pipeline of associative memory boards for track finding, which satisfies the requirements of level two triggers of the next LHC experiments. With respect to previous realizations, the pipelined architecture warrants full scalability of the memory bank, increased bandwidth (by one order of magnitude), increased number of detector layers (by a factor 2). Each associative memory board consists of four smaller boards, each containing 32 programmable associative memory chips, implemented with low-cost commercial FPGA. FPGA programming has been optimized for maximum efficiency in terms of pattern density and PCB design has been optimized in terms of modularity and FPGA chip density. A complete AM board has been successfully tested at 40 MHz, and can contain 6.6x10//3 particle trajectories. 7 Refs.

Highly Compressed Ion Beams for High Energy Density Science

CERN Document Server

Friedman, Alex; Briggs, Richard J; Callahan, Debra; Caporaso, George; Celata, C M; Davidson, Ronald C; Faltens, Andy; Grant-Logan, B; Grisham, Larry; Grote, D P; Henestroza, Enrique; Kaganovich, Igor D; Lee, Edward; Lee, Richard; Leitner, Matthaeus; Nelson, Scott D; Olson, Craig; Penn, Gregory; Reginato, Lou; Renk, Tim; Rose, David; Sessler, Andrew M; Staples, John W; Tabak, Max; Thoma, Carsten H; Waldron, William; Welch, Dale; Wurtele, Jonathan; Yu, Simon

2005-01-01

The Heavy Ion Fusion Virtual National Laboratory (HIF-VNL) is developing the intense ion beams needed to drive matter to the High Energy Density (HED) regimes required for Inertial Fusion Energy (IFE) and other applications. An interim goal is a facility for Warm Dense Matter (WDM) studies, wherein a target is heated volumetrically without being shocked, so that well-defined states of matter at 1 to 10 eV are generated within a diagnosable region. In the approach we are pursuing, low to medium mass ions with energies just above the Bragg peak are directed onto thin target "foils," which may in fact be foams or "steel wool" with mean densities 1% to 100% of solid. This approach complements that being pursued at GSI, wherein high-energy ion beams deposit a small fraction of their energy in a cylindrical target. We present the requirements for warm dense matter experiments, and describe suitable accelerator concepts, including novel broadband traveling wave pulse-line, drift-tube linac, RF, and single-gap approa...

A high energy density relaxor antiferroelectric pulsed capacitor dielectric

Energy Technology Data Exchange (ETDEWEB)

Jo, Hwan Ryul; Lynch, Christopher S. [Department of Mechanical and Aerospace Engineering, University of California, Los Angeles (UCLA), Los Angeles, California 90095 (United States)

2016-01-14

Pulsed capacitors require high energy density and low loss, properties that can be realized through selection of composition. Ceramic (Pb{sub 0.88}La{sub 0.08})(Zr{sub 0.91}Ti{sub 0.09})O{sub 3} was found to be an ideal candidate. La{sup 3+} doping and excess PbO were used to produce relaxor antiferroelectric behavior with slim and slanted hysteresis loops to reduce the dielectric hysteresis loss, to increase the dielectric strength, and to increase the discharge energy density. The discharge energy density of this composition was found to be 3.04 J/cm{sup 3} with applied electric field of 170 kV/cm, and the energy efficiency, defined as the ratio of the discharge energy density to the charging energy density, was 0.920. This high efficiency reduces the heat generated under cyclic loading and improves the reliability. The properties were observed to degrade some with temperature increase above 80 °C. Repeated electric field cycles up to 10 000 cycles were applied to the specimen with no observed performance degradation.

Artificial cognitive memory—changing from density driven to functionality driven

Science.gov (United States)

Shi, L. P.; Yi, K. J.; Ramanathan, K.; Zhao, R.; Ning, N.; Ding, D.; Chong, T. C.

2011-03-01

Increasing density based on bit size reduction is currently a main driving force for the development of data storage technologies. However, it is expected that all of the current available storage technologies might approach their physical limits in around 15 to 20 years due to miniaturization. To further advance the storage technologies, it is required to explore a new development trend that is different from density driven. One possible direction is to derive insights from biological counterparts. Unlike physical memories that have a single function of data storage, human memory is versatile. It contributes to functions of data storage, information processing, and most importantly, cognitive functions such as adaptation, learning, perception, knowledge generation, etc. In this paper, a brief review of current data storage technologies are presented, followed by discussions of future storage technology development trend. We expect that the driving force will evolve from density to functionality, and new memory modules associated with additional functions other than only data storage will appear. As an initial step toward building a future generation memory technology, we propose Artificial Cognitive Memory (ACM), a memory based intelligent system. We also present the characteristics of ACM, new technologies that can be used to develop ACM components such as bioinspired element cells (silicon, memristor, phase change, etc.), and possible methodologies to construct a biologically inspired hierarchical system.

High density UO2 powder preparation for HWR fuel

International Nuclear Information System (INIS)

Hwang, S. T.; Chang, I. S.; Choi, Y. D.; Cho, B. R.; Kwon, S. W.; Kim, B. H.; Moon, B. H.; Kim, S. D.; Phyu, K. M.; Lee, K. A.

1992-01-01

The objective of this project is to study on the preparation of method high density UO 2 powder for HWR Fuel. Accordingly, it is necessary to character ize the AUC processed UO 2 powder and to search method for the preparation of high density UO 2 powder for HWR Fuel. Therefore, it is expected that the results of this study can effect the producing of AUC processed UO 2 powder having sinterability. (Author)

Electrical and mechanical properties of highly elongated high density polyethylene as cryogenic insulation materials

International Nuclear Information System (INIS)

Yoshino, Katsumi; Park, Dae-Hee; Miyata, Kiyomi; Yamaoka, Hitoshi; Itoh, Minoru; Ichihara, Syouji.

1989-01-01

Electrical and mechanical properties of highly elongated high density polyethylene were investigated in the temperature range between 4.2 K and 400 K from a viewpoint of electrical insulation at low temperature and the following properties have been clarified. (1) The electrical conductivity of samples decreases with increasing draw ratio, and also decreases at cryogenic temperature. (2) Breakdown strength of highly elongated sample is similar to that of non-elongated sample. It is nearby temperature independent below 300 K but at higher temperature it falls steeply. (3) Mechanical breakdown stress and elastic modulus of high density polyethylene increase with increasing draw ratio. Their values at liquid nitrogen temperature are much higher than that at room temperature. On the other hand, strains decreases at liquid nitrogen temperature. (4) Break of the sample develops in the direction of 45deg from the direction of stress both at room temperature and at cryogenic temperature. (5) The characteristic of mechanical breakdown at liquid nitrogen temperature can be explained by a brittleness fracture process. (6) Toughness of high density polyethylene increases with increasing draw ratio until draw ratio of 5, and it decreased, and increase at higher draw ratio. However at extremely high draw ratio of 10 it again increases. These findings clearly indicate that highly elongated high density polyethylene has good electrical and mechanical properties at cryogenic temperature and can be used as the insulating materials at cryogenic temperature. (author)

Silver- and Zirconium-added ternary and quaternary TiAu based high temperature shape memory alloys

Energy Technology Data Exchange (ETDEWEB)

Wadood, A., E-mail: abdul.wadood@ist.edu.pk [High Temperature Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Department of Materials Science and Engineering, Institute of Space Technology (IST), Near Rawat Toll Plaza, Islamabad (Pakistan); Yamabe-Mitarai, Y. [High Temperature Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

2015-10-15

Low strength in B2 phase, incomplete shape memory effect and high cost of Au are obstacles for the use of Ti–50Au as a high temperature shape memory alloy. We investigated the effects of partial substitution of Ti with Zr and Au with Ag in Ti–Au on phase constitution, phase transformation, and high temperature thermo-mechanical and shape memory properties. Partial substitution of Ti with Zr in Ti–50Au and Ti–40Au–10Ag was found to improve the thermo-mechanical and shape memory effect. However, partial substitution of Au with Ag in Ti–50Au and Ti–50Au–10Zr was found to have negligible effects. Reasons for such different behavior of Zr- and Ag-added Ti–Au alloys are considered. - Highlights: • Au, Ag and Ti, Zr belong to same group. Effects of partial substitution of Au with Ag and Ti with Zr in Ti–Au are investigated. • Zr was found more effective than Ag in improving shape memory and mechanical properties. • Same atomic size of Au and Ag and large size misfit b/w Ti and Zr atoms. • Ag resulted large amount of precipitation in Ti–Au.

Extreme states of matter high energy density physics

CERN Document Server

Fortov, Vladimir E

2016-01-01

With its many beautiful colour pictures, this book gives fascinating insights into the unusual forms and behaviour of matter under extremely high pressures and temperatures. These extreme states are generated, among other things, by strong shock, detonation and electric explosion waves, dense laser beams,electron and ion beams, hypersonic entry of spacecraft into dense atmospheres of planets, and in many other situations characterized by extremely high pressures and temperatures.Written by one of the world's foremost experts on the topic, this book will inform and fascinate all scientists dealing with materials properties and physics, and also serve as an excellent introduction to plasma-, shock-wave and high-energy-density physics for students and newcomers seeking an overview. This second edition is thoroughly revised and expanded, in particular with new material on high energy-density physics, nuclear explosions and other nuclear transformation processes.

Working memory capacity and controlled serial memory search.

Science.gov (United States)

Mızrak, Eda; Öztekin, Ilke

2016-08-01

The speed-accuracy trade-off (SAT) procedure was used to investigate the relationship between working memory capacity (WMC) and the dynamics of temporal order memory retrieval. High- and low-span participants (HSs, LSs) studied sequentially presented five-item lists, followed by two probes from the study list. Participants indicated the more recent probe. Overall, accuracy was higher for HSs compared to LSs. Crucially, in contrast to previous investigations that observed no impact of WMC on speed of access to item information in memory (e.g., Öztekin & McElree, 2010), recovery of temporal order memory was slower for LSs. While accessing an item's representation in memory can be direct, recovery of relational information such as temporal order information requires a more controlled serial memory search. Collectively, these data indicate that WMC effects are particularly prominent during high demands of cognitive control, such as serial search operations necessary to access temporal order information from memory. Copyright © 2016 Elsevier B.V. All rights reserved.

Supernovae and high density nuclear matter

Energy Technology Data Exchange (ETDEWEB)

Kahana, S.

1986-01-01

The role of the nuclear equation of state (EOS) in producing prompt supernova explosions is examined. Results of calculations of Baron, Cooperstein, and Kahana incorporating general relativity and a new high density EOS are presented, and the relevance of these calculations to laboratory experiments with heavy ions considered. 31 refs., 6 figs., 2 tabs.

Supernovae and high density nuclear matter

International Nuclear Information System (INIS)

Kahana, S.

1986-01-01

The role of the nuclear equation of state (EOS) in producing prompt supernova explosions is examined. Results of calculations of Baron, Cooperstein, and Kahana incorporating general relativity and a new high density EOS are presented, and the relevance of these calculations to laboratory experiments with heavy ions considered. 31 refs., 6 figs., 2 tabs

ADX: a high field, high power density, Advanced Divertor test eXperiment

Science.gov (United States)

Vieira, R.; Labombard, B.; Marmar, E.; Irby, J.; Shiraiwa, S.; Terry, J.; Wallace, G.; Whyte, D. G.; Wolfe, S.; Wukitch, S.; ADX Team

2014-10-01

The MIT PSFC and collaborators are proposing an advanced divertor experiment (ADX) - a tokamak specifically designed to address critical gaps in the world fusion research program on the pathway to FNSF/DEMO. This high field (6.5 tesla, 1.5 MA), high power density (P/S ~ 1.5 MW/m2) facility would utilize Alcator magnet technology to test innovative divertor concepts for next-step DT fusion devices (FNSF, DEMO) at reactor-level boundary plasma pressures and parallel heat flux densities while producing high performance core plasma conditions. The experimental platform would also test advanced lower hybrid current drive (LHCD) and ion-cyclotron range of frequency (ICRF) actuators and wave physics at the plasma densities and magnetic field strengths of a DEMO, with the unique ability to deploy launcher structures both on the low-magnetic-field side and the high-field side - a location where energetic plasma-material interactions can be controlled and wave physics is most favorable for efficient current drive, heating and flow drive. This innovative experiment would perform plasma science and technology R&D necessary to inform the conceptual development and accelerate the readiness-for-deployment of FNSF/DEMO - in a timely manner, on a cost-effective research platform. Supported by DE-FC02-99ER54512.

High Temperature Memories in SiC Technology

OpenAIRE

Ekström, Mattias

2014-01-01

This thesis is part of the Working On Venus (WOV) project. The aim of the project is to design electronics in silicon carbide (SiC) that can withstand the extreme surface environmen  of Venus. This thesis investigates some possible computer memory technologies that could survive on the surface of Venus. A memory must be able to function at 460 °C and after a total radiation dose of at least 200 Gy (SiC). This thesis is a literature survey. The thesis covers several Random-Access Memory (RAM) ...

PIMS: Memristor-Based Processing-in-Memory-and-Storage.

Energy Technology Data Exchange (ETDEWEB)

Cook, Jeanine

2018-02-01

Continued progress in computing has augmented the quest for higher performance with a new quest for higher energy efficiency. This has led to the re-emergence of Processing-In-Memory (PIM) ar- chitectures that offer higher density and performance with some boost in energy efficiency. Past PIM work either integrated a standard CPU with a conventional DRAM to improve the CPU- memory link, or used a bit-level processor with Single Instruction Multiple Data (SIMD) control, but neither matched the energy consumption of the memory to the computation. We originally proposed to develop a new architecture derived from PIM that more effectively addressed energy efficiency for high performance scientific, data analytics, and neuromorphic applications. We also originally planned to implement a von Neumann architecture with arithmetic/logic units (ALUs) that matched the power consumption of an advanced storage array to maximize energy efficiency. Implementing this architecture in storage was our original idea, since by augmenting storage (in- stead of memory), the system could address both in-memory computation and applications that accessed larger data sets directly from storage, hence Processing-in-Memory-and-Storage (PIMS). However, as our research matured, we discovered several things that changed our original direc- tion, the most important being that a PIM that implements a standard von Neumann-type archi- tecture results in significant energy efficiency improvement, but only about a O(10) performance improvement. In addition to this, the emergence of new memory technologies moved us to propos- ing a non-von Neumann architecture, called Superstrider, implemented not in storage, but in a new DRAM technology called High Bandwidth Memory (HBM). HBM is a stacked DRAM tech- nology that includes a logic layer where an architecture such as Superstrider could potentially be implemented.

Simultaneous Changes of Spatial Memory and Spine Density after Intrahippocampal Administration of Fibrillar Aβ 1–42 to the Rat Brain

OpenAIRE

Borbély, Emőke; Horváth, János; Furdan, Szabina; Bozsó, Zsolt; Penke, Botond; Fülöp, Lívia

2014-01-01

Several animal models of Alzheimer's disease have been used in laboratory experiments. Intrahippocampal injection of fibrillar amyloid-beta (fAβ) peptide represents one of the most frequently used models, mimicking Aβ deposits in the brain. In our experiment synthetic fAβ 1–42 peptide was administered to rat hippocampus. The effect of the Aβ peptide on spatial memory and dendritic spine density was studied. The fAβ 1–42-treated rats showed decreased spatial learning ability measured in Morris...

High density plasmas formation in Inertial Confinement Fusion and Astrophysics

International Nuclear Information System (INIS)

Martinez-Val, J. M.; Minguez, E.; Velarde, P.; Perlado, J. M.; Velarde, G.; Bravo, E.; Eliezer, S.; Florido, R.; Garcia Rubiano, J.; Garcia-Senz, D.; Gil de la Fe, J. M.; Leon, P. T.; Martel, P.; Ogando, F.; Piera, M.; Relano, A.; Rodriguez, R.; Garcia, C.; Gonzalez, E.; Lachaise, M.; Oliva, E.

2005-01-01

In inertially confined fusion (ICF), high densities are required to obtain high gains. In Fast Ignition, a high density, low temperature plasma can be obtained during the compression. If the final temperature reached is low enough, the electrons of the plasma can be degenerate. In degenerate plasmas. Bremsstrahlung emission is strongly suppressed an ignition temperature becomes lower than in classical plasmas, which offers a new design window for ICF. The main difficulty of degenerate plasmas in the compression energy needed for high densities. Besides that, the low specific heat of degenerate electrons (as compared to classical values) is also a problem because of the rapid heating of the plasma. Fluid dynamic evolution of supernovae remnants is a very interesting problem in order to predict the thermodynamical conditions achieved in their collision regions. Those conditions have a strong influence in the emission of light and therefore the detection of such events. A laboratory scale system has been designed reproducing the fluid dynamic field in high energy experiments. The evolution of the laboratory system has been calculated with ARWEN code, 2D Radiation CFD that works with Adaptive Mesh Refinement. Results are compared with simulations on the original system obtained with a 3D SPH astrophysical code. New phenomena at the collision plane and scaling of the laboratory magnitudes will be described. Atomic physics for high density plasmas has been studied with participation in experiments to obtain laser produced high density plasmas under NLTE conditions, carried out at LULI. A code, ATOM3R, has been developed which solves rate equations for optically thin plasmas as well as for homogeneous optically thick plasmas making use of escape factors. New improvements in ATOM3R are been done to calculate level populations and opacities for non homogeneous thick plasmas in NLTE, with emphasis in He and H lines for high density plasma diagnosis. Analytical expression

Single-event phenomena on recent semiconductor devices. Charge-type multiple-bit upsets in high integrated memories

International Nuclear Information System (INIS)

Makihara, Akiko; Shindou, Hiroyuki; Nemoto, Norio; Kuboyama, Satoshi; Matsuda, Sumio; Ohshima, Takeshi; Hirao, Toshio; Itoh, Hisayoshi

2001-01-01

High integrated memories are used in solid state data recorder (SSDR) of the satellite for accumulating observation data. Single event upset phenomena which turn over an accumulated data in the memory cells are caused by heavy ion incidence. Studies on single-bit upset and multiple-bit upset phenomena in the high integrated memory cells are in progress recently. 16 Mbit DRAM (Dynamic Random Access Memories) and 64 Mbit DRAM are irradiated by heavy ion species, such as iodine, bromine and nickel, in comparison with the irradiation damage in the cosmic environment. Data written on the memory devices are read out after the irradiation. The memory cells in three kinds of states, all of charged state, all of discharged state, and an alternative state of charge and discharge, are irradiated for sorting out error modes caused by heavy ion incidence. The soft error in a single memory cells is known as a turn over from charged state to discharged state. Electrons in electron-hole pair generated by heavy ion incidence are captured in a diffusion region between capacitor electrodes of semiconductor. The charged states in the capacitor electrodes before the irradiation are neutralized and changed to the discharged states. According to high integration of the memories, many of the cells are affected by a single ion incidence. The multiple-bit upsets, however, are generated in the memory cells of discharged state before the irradiation, also. The charge-type multiple-bit upsets is considered as that error data are written on the DRAM during refresh cycle of a sense-up circuit and a pre-charge circuit which control the DRAM. (M. Suetake)

High-density hybrid interconnect methodologies

International Nuclear Information System (INIS)

John, J.; Zimmermann, L.; Moor, P.De; Hoof, C.Van

2003-01-01

Full text: The presentation gives an overview of the state-of-the-art of hybrid integration and in particular the IMEC technological approaches that will be able to address future hybrid detector needs. The dense hybrid flip-chip integration of an array of detectors and its dedicated readout electronics can be achieved with a variety of solderbump techniques such as pure Indium or Indium alloys, Ph-In, Ni/PbSn, but also conducting polymers... Particularly for cooled applications or ultra-high density applications, Indium solderbump technology (electroplated or evaporated) is the method of choice. The state-of-the-art of solderbump technologies that are to a high degree independent of the underlying detector material will be presented and examples of interconnect densities between 5x1E4cm-2 and 1x1E6 cm-2 will be demonstrated. For several classes of detectors, flip-chip integration is not allowed since the detectors have to be illuminated from the top. This applies to image sensors for EUV applications such as GaN/AlGaN based detectors and to MEMS-based sensors. In such cases, the only viable interconnection method has to be through the (thinned) detector wafer followed by a solderbump-based integration. The approaches for dense and ultra-dense through-the-wafer interconnect 'vias' will be presented and wafer thinning approaches will be shown

Anti-Ferroelectric Ceramics for High Energy Density Capacitors

Directory of Open Access Journals (Sweden)

Aditya Chauhan

2015-11-01

Full Text Available With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

Exploring high-density baryonic matter: Maximum freeze-out density

Energy Technology Data Exchange (ETDEWEB)

Randrup, Joergen [Lawrence Berkeley National Laboratory, Nuclear Science Division, Berkeley, CA (United States); Cleymans, Jean [University of Cape Town, UCT-CERN Research Centre and Department of Physics, Rondebosch (South Africa)

2016-08-15

The hadronic freeze-out line is calculated in terms of the net baryon density and the energy density instead of the usual T and μ{sub B}. This analysis makes it apparent that the freeze-out density exhibits a maximum as the collision energy is varied. This maximum freeze-out density has μ{sub B} = 400 - 500 MeV, which is above the critical value, and it is reached for a fixed-target bombarding energy of 20-30 GeV/N well within the parameters of the proposed NICA collider facility. (orig.)

Low-enriched uranium high-density target project. Compendium report

Energy Technology Data Exchange (ETDEWEB)

Vandegrift, George; Brown, M. Alex; Jerden, James L.; Gelis, Artem V.; Stepinski, Dominique C.; Wiedmeyer, Stanley; Youker, Amanda; Hebden, Andrew; Solbrekken, G; Allen, C; Robertson., D; El-Gizawy, Sherif; Govindarajan, Srisharan; Hoyer, Annemarie; Makarewicz, Philip; Harris, Jacob; Graybill, Brian; Gunn, Andy; Berlin, James; Bryan, Chris; Sherman, Steven; Hobbs, Randy; Griffin, F. P.; Chandler, David; Hurt, C. J.; Williams, Paul; Creasy, John; Tjader, Barak; McFall, Danielle; Longmire, Hollie

2016-09-01

At present, most ⁹⁹Mo is produced in research, test, or isotope production reactors by irradiation of highly enriched uranium targets. To achieve the denser form of uranium needed for switching from high to low enriched uranium (LEU), targets in the form of a metal foil (~125-150 µm thick) are being developed. The LEU High Density Target Project successfully demonstrated several iterations of an LEU-fission-based Mo-99 technology that has the potential to provide the world’s supply of Mo-99, should major producers choose to utilize the technology. Over 50 annular high density targets have been successfully tested, and the assembly and disassembly of targets have been improved and optimized. Two target front-end processes (acidic and electrochemical) have been scaled up and demonstrated to allow for the high-density target technology to mate up to the existing producer technology for target processing. In the event that a new target processing line is started, the chemical processing of the targets is greatly simplified. Extensive modeling and safety analysis has been conducted, and the target has been qualified to be inserted into the High Flux Isotope Reactor, which is considered above and beyond the requirements for the typical use of this target due to high fluence and irradiation duration.

High Channel Count, High Density Microphone Arrays for Wind Tunnel Environments, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The Interdisciplinary Consulting Corporation (IC2) proposes the development of high channel count, high density, reduced cost per channel, directional microphone...

High current density magnets for INTOR and TIBER

International Nuclear Information System (INIS)

Miller, J.R.; Henning, C.D.; Kerns, J.A.; Slack, D.S.; Summers, L.T.; Zbasnik, J.P.

1986-12-01

The adoption of high current density, high field, superconducting magnets for INTOR and TIBER would prove beneficial. When combined with improved radiation tolerance of the magnets to minimize the inner leg shielding, a substantial reduction in machine dimensions and capital costs can be achieved. Fortunately, cable-in-conduit conductors (CICC) which are capable of the desired enhancements are being developed. Because conductor stability in a CICC depends more on the trapped helium enthalpy, rather than the copper resistivity, higher current densities of the order of 40 A/mm 2 at 12 T are possible. Radiation damage to the copper stabilizer is less important because the growth in resistance is a second-order effect on stability. Such CICC conductors lend themselves naturally to niobium-tin utilization, with the benefits of the high current-sharing temperature of this material being taken to advantage in absorbing radiation heating. When the helium coolant is injected at near the critical pressure, Joule-Thompson expansion in the flow path tends to stabilize the fluid temperature at under 6 K. Thus, higher fields, as well as higher current densities, can be considered for INTOR or TIBER

High volumetric power density, non-enzymatic, glucose fuel cells.

Science.gov (United States)

Oncescu, Vlad; Erickson, David

2013-01-01

The development of new implantable medical devices has been limited in the past by slow advances in lithium battery technology. Non-enzymatic glucose fuel cells are promising replacement candidates for lithium batteries because of good long-term stability and adequate power density. The devices developed to date however use an "oxygen depletion design" whereby the electrodes are stacked on top of each other leading to low volumetric power density and complicated fabrication protocols. Here we have developed a novel single-layer fuel cell with good performance (2 μW cm⁻²) and stability that can be integrated directly as a coating layer on large implantable devices, or stacked to obtain a high volumetric power density (over 16 μW cm⁻³). This represents the first demonstration of a low volume non-enzymatic fuel cell stack with high power density, greatly increasing the range of applications for non-enzymatic glucose fuel cells.

Anomalous evolution of Ar metastable density with electron density in high density Ar discharge

International Nuclear Information System (INIS)

Park, Min; Chang, Hong-Young; You, Shin-Jae; Kim, Jung-Hyung; Shin, Yong-Hyeon

2011-01-01

Recently, an anomalous evolution of argon metastable density with plasma discharge power (electron density) was reported [A. M. Daltrini, S. A. Moshkalev, T. J. Morgan, R. B. Piejak, and W. G. Graham, Appl. Phys. Lett. 92, 061504 (2008)]. Although the importance of the metastable atom and its density has been reported in a lot of literature, however, a basic physics behind the anomalous evolution of metastable density has not been clearly understood yet. In this study, we investigated a simple global model to elucidate the underlying physics of the anomalous evolution of argon metastable density with the electron density. On the basis of the proposed simple model, we reproduced the anomalous evolution of the metastable density and disclosed the detailed physics for the anomalous result. Drastic changes of dominant mechanisms for the population and depopulation processes of Ar metastable atoms with electron density, which take place even in relatively low electron density regime, is the clue to understand the result.

High-current discharge channel contraction in high density gas

International Nuclear Information System (INIS)

Rutberg, Ph. G.; Bogomaz, A. A.; Pinchuk, M. E.; Budin, A. V.; Leks, A. G.; Pozubenkov, A. A.

2011-01-01

Research results for discharges at current amplitudes of 0.5-1.6 MA and current rise rate of ∼10 10 A/s are presented. The discharge is performed in the hydrogen environment at the initial pressure of 5-35 MPa. Initiation is implemented by a wire explosion. The time length of the first half-period of the discharge current is 70-150 μs. Under such conditions, discharge channel contraction is observed; the contraction is followed by soft x-ray radiation. The phenomena are discussed, which are determined by high density of the gas surrounding the discharge channel. These phenomena are increase of the current critical value, where the channel contraction begins and growth of temperature in the axis region of the channel, where the initial density of the gas increases.

Still rethinking the value of high wood density.

Science.gov (United States)

Larjavaara, Markku; Muller-Landau, Helene C

2012-01-01

In a previous paper, we questioned the traditional interpretation of the advantages and disadvantages of high wood density (Functional Ecology 24: 701-705). Niklas and Spatz (American Journal of Botany 97: 1587-1594) challenged the biomechanical relevance of studying properties of dry wood, including dry wood density, and stated that we erred in our claims regarding scaling. We first present the full derivation of our previous claims regarding scaling. We then examine how the fresh modulus of rupture and the elastic modulus scale with dry wood density and compare these scaling relationships with those for dry mechanical properties, using almost exactly the same data set analyzed by Niklas and Spatz. The derivation shows that given our assumptions that the modulus of rupture and elastic modulus are both proportional to wood density, the resistance to bending is inversely proportional to wood density and strength is inversely proportional with the square root of wood density, exactly as we previously claimed. The analyses show that the elastic modulus of fresh wood scales proportionally with wood density (exponent 1.05, 95% CI 0.90-1.11) but that the modulus of rupture of fresh wood does not, scaling instead with the 1.25 power of wood density (CI 1.18-1.31). The deviation from proportional scaling for modulus of rupture is so small that our central conclusion remains correct: for a given construction cost, trees with lower wood density have higher strength and higher resistance to bending.

High throughput olfactory conditioning and memory retention test reveal variation in Nasonia parasitic wasps

NARCIS (Netherlands)

Hoedjes, K.M.; Steidle, J.L.M.; Werren, J.H.; Vet, L.E.M.; Smid, H.M.

2012-01-01

Most of our knowledge on learning and memory formation results from extensive studies on a small number of animal species. Although features and cellular pathways of learning and memory are highly similar in this diverse group of species, there are also subtle differences. Closely related species of

High-throughput olfactory conditioning and memory retention test show variation in Nasonia parasitic wasps.

NARCIS (Netherlands)

Hoedjes, K.M.; Steidle, J.L.M.; Werren, J.H.; Vet, L.E.M.; Smid, H.M.

2012-01-01

Most of our knowledge on learning and memory formation results from extensive studies on a small number of animal species. Although features and cellular pathways of learning and memory are highly similar in this diverse group of species, there are also subtle differences. Closely related species of

High-frequency emissions during the propagation of an electron beam in a high-density plasma

International Nuclear Information System (INIS)

Lalita and Tripathi, V.K.

1988-01-01

A relativistic annular electron beam passing through a high-density plasma excites Langmuir waves via Cerenkov interaction. The Langmuir waves are backscattered off ions via nonlinear ion Landau damping. At moderately high amplitudes these waves are parametrically up-converted by the beam into high-frequency electromagnetic radiation, as observed in some recent experiments. A nonlocal theory of this process is developed in a cylindrical geometry. It is seen that the growth rate of the Langmuir wave scales as one-third power of beam density. The growth rate of parametric instability scales as one-fourth power of beam density and the square root of beam thickness

A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy

Science.gov (United States)

Han, Runze; Shen, Wensheng; Huang, Peng; Zhou, Zheng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

2018-04-01

A novel ternary content addressable memory (TCAM) design based on resistive random access memory (RRAM) is presented. Each TCAM cell consists of two parallel RRAM to both store and search for ternary data. The cell size of the proposed design is 8F2, enable a ∼60× cell area reduction compared with the conventional static random access memory (SRAM) based implementation. Simulation results also show that the search delay and energy consumption of the proposed design at the 64-bit word search are 2 ps and 0.18 fJ/bit/search respectively at 22 nm technology node, where significant improvements are achieved compared to previous works. The desired characteristics of RRAM for implementation of the high performance TCAM search chip are also discussed.

Ferrite materials for memory applications

CERN Document Server

Saravanan, R

2017-01-01

The book discusses the synthesis and characterization of various ferrite materials used for memory applications. The distinct feature of the book is the construction of charge density of ferrites by deploying the maximum entropy method (MEM). This charge density gives the distribution of charges in the ferrite unit cell, which is analyzed for charge related properties.

High Energy Density Physics and Exotic Acceleration Schemes

International Nuclear Information System (INIS)

Cowan, T.; Colby, E.

2005-01-01

The High Energy Density and Exotic Acceleration working group took as our goal to reach beyond the community of plasma accelerator research with its applications to high energy physics, to promote exchange with other disciplines which are challenged by related and demanding beam physics issues. The scope of the group was to cover particle acceleration and beam transport that, unlike other groups at AAC, are not mediated by plasmas or by electromagnetic structures. At this Workshop, we saw an impressive advancement from years past in the area of Vacuum Acceleration, for example with the LEAP experiment at Stanford. And we saw an influx of exciting new beam physics topics involving particle propagation inside of solid-density plasmas or at extremely high charge density, particularly in the areas of laser acceleration of ions, and extreme beams for fusion energy research, including Heavy-ion Inertial Fusion beam physics. One example of the importance and extreme nature of beam physics in HED research is the requirement in the Fast Ignitor scheme of inertial fusion to heat a compressed DT fusion pellet to keV temperatures by injection of laser-driven electron or ion beams of giga-Amp current. Even in modest experiments presently being performed on the laser-acceleration of ions from solids, mega-amp currents of MeV electrons must be transported through solid foils, requiring almost complete return current neutralization, and giving rise to a wide variety of beam-plasma instabilities. As keynote talks our group promoted Ion Acceleration (plenary talk by A. MacKinnon), which historically has grown out of inertial fusion research, and HIF Accelerator Research (invited talk by A. Friedman), which will require impressive advancements in space-charge-limited ion beam physics and in understanding the generation and transport of neutralized ion beams. A unifying aspect of High Energy Density applications was the physics of particle beams inside of solids, which is proving to

Interplay of charge density wave and spin density wave in high-Tc superconductors

International Nuclear Information System (INIS)

Pradhan, B.; Raj, B.K.; Rout, G.C.

2008-01-01

We present a mean-field theory theoretical model study for the coexistence of the two strongly interacting charge density wave (CDW) and spin density wave (SDW) for high-T c cuprates in the underdoped region before the onset of the superconductivity in the system. The analytic expressions for the temperature dependence of the CDW and SDW order parameters are derived and solved self-consistently. Their interplay is studied by varying their respective coupling constants. It is observed that in the interplay region both the gap parameters exhibit very strong dependence of their gap values for the coupling constants. Further, the electronic density of states (DOS) for the conduction electrons, which represents the scanning tunneling data, show two gap parameters in the interplay region from these experimental data. Our model can help to determine separately the CDW and SDW parameters

Analog-to-digital conversion using custom CMOS analog memory for the EOS time projection chamber

International Nuclear Information System (INIS)

Lee, K.L.; Arthur, A.A.; Jones, R.W.; Matis, H.S.; Nakamura, M.; Kleinfelder, S.A.; Ritter, H.G.; Wienman, H.H.

1990-01-01

This paper describes the multiplexing scheme of custom CMOS analog memory integrated circuits, 16 channels x 256 cells, into analog to digital converters (ADC's) to handle 15,360 signal channels of a time projection, chamber detector system. Primary requirements of this system are high density, low power and large dynamic range. The analog memory device multiplexing scheme was designed to digitize the information stored in the memory cells. The digitization time of the ADC's and the settling times for the memory unit were carefully interleaved to optimize the performance and timing during the multiplexing operation. This kept the total number of ADC's, a costly and power dissipative component, to an acceptable minimum

3D Printed Photoresponsive Devices Based on Shape Memory Composites.

Science.gov (United States)

Yang, Hui; Leow, Wan Ru; Wang, Ting; Wang, Juan; Yu, Jiancan; He, Ke; Qi, Dianpeng; Wan, Changjin; Chen, Xiaodong

2017-09-01

Compared with traditional stimuli-responsive devices with simple planar or tubular geometries, 3D printed stimuli-responsive devices not only intimately meet the requirement of complicated shapes at macrolevel but also satisfy various conformation changes triggered by external stimuli at the microscopic scale. However, their development is limited by the lack of 3D printing functional materials. This paper demonstrates the 3D printing of photoresponsive shape memory devices through combining fused deposition modeling printing technology and photoresponsive shape memory composites based on shape memory polymers and carbon black with high photothermal conversion efficiency. External illumination triggers the shape recovery of 3D printed devices from the temporary shape to the original shape. The effect of materials thickness and light density on the shape memory behavior of 3D printed devices is quantified and calculated. Remarkably, sunlight also triggers the shape memory behavior of these 3D printed devices. This facile printing strategy would provide tremendous opportunities for the design and fabrication of biomimetic smart devices and soft robotics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evaluating Approaches to Rendering Braille Text on a High-Density Pin Display.

Science.gov (United States)

Morash, Valerie S; Russomanno, Alexander; Gillespie, R Brent; OModhrain, Sile

2017-10-13

Refreshable displays for tactile graphics are typically composed of pins that have smaller diameters and spacing than standard braille dots. We investigated configurations of high-density pins to form braille text on such displays using non-refreshable stimuli produced with a 3D printer. Normal dot braille (diameter 1.5 mm) was compared to high-density dot braille (diameter 0.75 mm) wherein each normal dot was rendered by high-density simulated pins alone or in a cluster of pins configured in a diamond, X, or square; and to "blobs" that could result from covering normal braille and high-density multi-pin configurations with a thin membrane. Twelve blind participants read MNREAD sentences displayed in these conditions. For high-density simulated pins, single pins were as quickly and easily read as normal braille, but diamond, X, and square multi-pin configurations were slower and/or harder to read than normal braille. We therefore conclude that as long as center-to-center dot spacing and dot placement is maintained, the dot diameter may be open to variability for rendering braille on a high density tactile display.

Quench protection and design of large high-current-density superconducting magnets

International Nuclear Information System (INIS)

Green, M.A.

1981-03-01

Although most large superconducting magnets have been designed using the concept of cryostability, there is increased need for large magnets which operate at current densities above the cryostable limit (greater than 10 8 Am -2 ). Large high current density superconducting magnets are chosen for the following reasons: reduced mass, reduced coil thickness or size, and reduced cost. The design of large high current density, adiabatically stable, superconducting magnets requires a very different set of design rules than either large cryostable superconducting magnets or small self-protected high current density magnets. The problems associated with large high current density superconducting magnets fall into three categories; (a) quench protection, (b) stress and training, and (c) cryogenic design. The three categories must be considered simultaneously. The paper discusses quench protection and its implication for magnets of large stored energies (this includes strings of smaller magnets). Training and its relationship to quench protection and magnetic strain are discussed. Examples of magnets, built at the Lawrence Berkeley Laboratory and elsewhere using the design guidelines given in this report, are presented

High-density and high-ρR fuel assembly for fast-ignition inertial confinement fusion

International Nuclear Information System (INIS)

Betti, R.; Zhou, C.

2005-01-01

Scaling relations to optimize implosion parameters for fast-ignition inertial confinement fusion are derived and used to design high-gain fast-ignition targets. A method to assemble thermonuclear fuel at high densities, high ρR, and with a small-size hot spot is presented. Massive cryogenic shells can be imploded with a low implosion velocity V I on a low adiabat α using the relaxation-pulse technique. While the low V I yields a small hot spot, the low α leads to large peak values of the density and areal density. It is shown that a 750 kJ laser can assemble fuel with V I ≅1.7x10 7 cm/s, α≅0.7, ρ≅400 g/cc, ρR≅3 g/cm 2 , and a hot-spot volume of less than 10% of the compressed core. If fully ignited, this fuel assembly can produce high gains of interest to inertial fusion energy applications

Numerical simulation of SU(2)c high density state

International Nuclear Information System (INIS)

Muroya, Shin; Nakamura, Atsushi; Nonaka, Chiho

2003-01-01

We report a study of the high baryon number density system with use of the two-color lattice QCD with Wilson fermions[1]. First we investigate thermodynamical quantities such as the Polyakov line, gluon energy density, and baryon number density in the (κ, μ) plane, where κ and μ are the hopping parameter and chemical potential, respectively. Then we calculate propagators of meson (q-barΓq) and baryon (qΓq) states in addition to the potential between quark lines. (author)

High follicle density does not decrease sweat gland density in Huacaya alpacas.

Science.gov (United States)

Moore, K E; Maloney, S K; Blache, D

2015-01-01

When exposed to high ambient temperatures, mammals lose heat evaporatively by either sweating from glands in the skin or by respiratory panting. Like other camelids, alpacas are thought to evaporate more water by sweating than panting, despite a thick fleece, unlike sheep which mostly pant in response to heat stress. Alpacas were brought to Australia to develop an alternative fibre industry to sheep wool. In Australia, alpacas can be exposed to ambient temperatures higher than in their native South America. As a young industry there is a great deal of variation in the quality and quantity of the fleece produced in the national flock. There is selection pressure towards animals with finer and denser fleeces. Because the fibre from secondary follicles is finer than that from primary follicles, selecting for finer fibres might alter the ratio of primary and secondary follicles. In turn the selection might alter sweat gland density because the sweat glands are associated with the primary follicle. Skin biopsy and fibre samples were obtained from the mid-section of 33 Huacaya alpacas and the skin sections were processed into horizontal sections at the sebaceous gland level. Total, primary, and secondary follicles and the number of sweat gland ducts were quantified. Fibre samples from each alpaca were further analysed for mean fibre diameter. The finer-fibred animals had a higher total follicle density (Palpacas with high follicle density should not be limited for potential sweating ability. Copyright © 2014 Elsevier Ltd. All rights reserved.

Potential formation and confinement in high density plasma on the GAMMA 10 tandem mirror

International Nuclear Information System (INIS)

Yatsu, K.

2002-01-01

After the attainment of doubling of the density due to the potential confinement, GAMMA 10 experiments have been directed to realization of a high density plasma and also to study dependence of the confining potential and confinement time on the plasma density. These problems are important to understand the physics of potential formation in tandem mirrors and also for the development of a tandem mirror reactor. We reported high density plasma production by using an ion cyclotron range of frequency heating at a high harmonic frequency in the last IAEA Conference. However, the diamagnetic signal of the high density plasma decreased when electron cyclotron resonance heating (ECRH) was applied due to some instabilities. Recently, the high density plasma production was much improved by adjusting the spacing of the conducting plates installed in the anchor transition regions, which enabled us to produce a high density plasma without degradation of the diamagnetic signal with ECRH and also to study the density dependence. In this paper we report production of a high density plasma and dependence of the confining potential and the confinement time on the density. (author)

High Energy Density Dielectrics for Pulsed Power Applications

National Research Council Canada - National Science Library

Wu, Richard L; Bray, Kevin R

2008-01-01

This report was developed under a SBIR contract. Aluminum oxynitride (AlON) capacitors exhibit several promising characteristics for high energy density capacitor applications in extreme environments...

Pair-density waves, charge-density waves, and vortices in high-Tc cuprates

Science.gov (United States)

Dai, Zhehao; Zhang, Ya-Hui; Senthil, T.; Lee, Patrick A.

2018-05-01

A recent scanning tunneling microscopy (STM) experiment reports the observation of a charge-density wave (CDW) with a period of approximately 8a in the halo region surrounding the vortex core, in striking contrast to the approximately 4a period CDWs that are commonly observed in the cuprates. Inspired by this work, we study a model where a bidirectional pair-density wave (PDW) with period 8 is at play. This further divides into two classes: (1) where the PDW is a competing state of the d -wave superconductor and can exist only near the vortex core where the d -wave order is suppressed and (2) where the PDW is the primary order, the so-called "mother state" that persists with strong phase fluctuations to high temperature and high magnetic field and lies behind the pseudogap phenomenology. We study the charge-density wave structures near the vortex core in these models. We emphasize the importance of the phase winding of the d -wave order parameter. The PDW can be pinned by the vortex core due to this winding and become static. Furthermore, the period-8 CDW inherits the properties of this winding, which gives rise to a special feature of the Fourier transform peak, namely, it is split in certain directions. There is also a line of zeros in the inverse Fourier transform of filtered data. We propose that these are key experimental signatures that can distinguish between the PDW-driven scenario from the more mundane option that the period-8 CDW is primary. We discuss the pro's and con's of the options considered above. Finally, we attempt to place the STM experiment in the broader context of pseudogap physics of underdoped cuprates and relate this observation to the unusual properties of x-ray scattering data on CDW carried out to very high magnetic field.

Lithium-Based High Energy Density Flow Batteries

Science.gov (United States)

Bugga, Ratnakumar V. (Inventor); West, William C. (Inventor); Kindler, Andrew (Inventor); Smart, Marshall C. (Inventor)

2014-01-01

Systems and methods in accordance with embodiments of the invention implement a lithium-based high energy density flow battery. In one embodiment, a lithium-based high energy density flow battery includes a first anodic conductive solution that includes a lithium polyaromatic hydrocarbon complex dissolved in a solvent, a second cathodic conductive solution that includes a cathodic complex dissolved in a solvent, a solid lithium ion conductor disposed so as to separate the first solution from the second solution, such that the first conductive solution, the second conductive solution, and the solid lithium ionic conductor define a circuit, where when the circuit is closed, lithium from the lithium polyaromatic hydrocarbon complex in the first conductive solution dissociates from the lithium polyaromatic hydrocarbon complex, migrates through the solid lithium ionic conductor, and associates with the cathodic complex of the second conductive solution, and a current is generated.

How a high working memory capacity can increase proactive interference.

Science.gov (United States)

Steinwascher, Merle A; Meiser, Thorsten

2016-08-01

Previous findings suggested that a high working memory capacity (WMC) is potentially associated with a higher susceptibility to proactive interference (PI) if the latter is measured under high cognitive load. To explain such a finding, we propose to consider susceptibility to PI as a net effect of individual executive processes and the intrinsic potential for PI. With the latter, we refer to the amount of information that is activated at a given time and that has the potential to exert PI subsequently. In two studies deploying generalized linear mixed models, susceptibility to PI was modeled as the decline of performance over trials of a complex span task. The results revealed that a higher WMC was associated with a higher susceptibility to PI. Moreover, the number of stimuli recalled in one trial as a proxy variable for the intrinsic potential for PI negatively affected memory performance in the subsequent trial. Copyright © 2016 Elsevier Inc. All rights reserved.

Apparatus and method for generating high density pulses of electrons

International Nuclear Information System (INIS)

Lee, C.; Oettinger, P.E.

1981-01-01

An apparatus and method are described for the production of high density pulses of electrons using a laser energized emitter. Caesium atoms from a low pressure vapour atmosphere are absorbed on and migrate from a metallic target rapidly heated by a laser to a high temperature. Due to this heating time being short compared with the residence time of the caesium atoms adsorbed on the target surface, copious electrons are emitted which form a high current density pulse. (U.K.)

Compatibility of advanced tokamak plasma with high density and high radiation loss operation in JT-60U

International Nuclear Information System (INIS)

Takenaga, H.; Asakura, N.; Kubo, H.; Higashijima, S.; Konoshima, S.; Nakano, T.; Oyama, N.; Ide, S.; Fujita, T.; Takizuka, T.; Kamada, Y.; Miura, Y.; Porter, G.D.; Rognlien, T.D.; Rensink, M.E.

2005-01-01

Compatibility of advanced tokamak plasmas with high density and high radiation loss has been investigated in both reversed shear (RS) plasmas and high β p H-mode plasmas with a weak positive shear on JT-60U. In the RS plasmas, the operation regime is extended to high density above the Greenwald density (n GW ) with high confinement (HH y2 >1) and high radiation loss fraction (f rad >0.9) by tailoring the internal transport barriers (ITBs). High confinement of HH y2 =1.2 is sustained even with 80% radiation from the main plasma enhanced by accumulated metal impurity. The divertor radiation is enhanced by Ne seeding and the ratio of the divertor radiation to the total radiation is increased from 20% without seeding to 40% with Ne seeding. In the high β p H-mode plasmas, high confinement (HH y2 =0.96) is maintained at high density (n-bar e /n GW =0.92) with high radiation loss fraction (f rad ∼1) by utilizing high-field-side pellets and Ar injections. The high n-bar e /n GW is obtained due to a formation of clear density ITB. Strong core-edge parameter linkage is observed, as well as without Ar injection. In this linkage, the pedestal β p , defined as β p ped =p ped /(B p 2 /2μ 0 ) where p ped is the plasma pressure at the pedestal top, is enhanced with the total β p . The radiation profile in the main plasma is peaked due to Ar accumulation inside the ITB and the measured central radiation is ascribed to Ar. The impurity transport analyses indicate that Ar accumulation by a factor of 2 more than the electron, as observed in the high β p H-mode plasma, is acceptable even with peaked density profile in a fusion reactor for impurity seeding. (author)

Comparison of low density and high density pedicle screw instrumentation in Lenke 1 adolescent idiopathic scoliosis.

Science.gov (United States)

Shen, Mingkui; Jiang, Honghui; Luo, Ming; Wang, Wengang; Li, Ning; Wang, Lulu; Xia, Lei

2017-08-02

The correlation between implant density and deformity correction has not yet led to a precise conclusion in adolescent idiopathic scoliosis (AIS). The aim of this study was to evaluate the effects of low density (LD) and high density (HD) pedicle screw instrumentation in terms of the clinical, radiological and Scoliosis Research Society (SRS)-22 outcomes in Lenke 1 AIS. We retrospectively reviewed 62 consecutive Lenke 1 AIS patients who underwent posterior spinal arthrodesis using all-pedicle screw instrumentation with a minimum follow-up of 24 months. The implant density was defined as the number of screws per spinal level fused. Patients were then divided into two groups according to the average implant density for the entire study. The LD group (n = 28) had fewer than 1.61 screws per level, while the HD group (n = 34) had more than 1.61 screws per level. The radiographs were analysed preoperatively, postoperatively and at final follow-up. The perioperative and SRS-22 outcomes were also assessed. Independent sample t tests were used between the two groups. Comparisons between the two groups showed no significant differences in the correction of the main thoracic curve and thoracic kyphosis, blood transfusion, hospital stay, and SRS-22 scores. Compared with the HD group, there was a decreased operating time (278.4 vs. 331.0 min, p = 0.004) and decreased blood loss (823.6 vs. 1010.9 ml, p = 0.048), pedicle screws needed (15.1 vs. 19.6, p density and high density pedicle screw instrumentation achieved satisfactory deformity correction in Lenke 1 AIS patients. However, the operating time and blood loss were reduced, and the implant costs were decreased with the use of low screw density constructs.

Shape memory behavior of high strength NiTiHfPd polycrystalline alloys

International Nuclear Information System (INIS)

Karaca, H.E.; Acar, E.; Ded, G.S.; Basaran, B.; Tobe, H.; Noebe, R.D.; Bigelow, G.; Chumlyakov, Y.I.

2013-01-01

Systematic characterization of the shape memory properties of a quaternary Ni 45.3 –Ti 29.7 –Hf 20 –Pd 5 (at.%) polycrystalline alloy was performed in compression after selected aging treatments. Precipitation characteristics were revealed by transmission electron microscopy. The effects of aging temperature and time on transformation temperatures, recoverable and residual strains, and temperature and stress hystereses were determined by differential scanning calorimetry, constant-load thermal cycling experiments and isothermal strain cycling (superelasticity) tests. The crystal structure and lattice parameters of the transforming phases were determined from X-ray diffraction analysis. It was revealed that precipitation hardening significantly improved the shape memory properties of the NiTiHfPd alloy. Under optimum aging conditions, shape memory strains of up to 4% under 1 GPa were possible, and superelasticity experiments resulted in full strain recovery without any plastic deformation, even at stress levels as high as 2 GPa. The NiTiHfPd polycrystalline alloy exhibited very high damping capacity/absorbed energy (30–34 J cm −3 ) and work output (30–35 J cm −3 ), which were attributed to the ability to operate at high stress levels without significant plastic deformation and to a high mechanical hysteresis (>900 MPa) at temperatures ranging from 20 °C to 80 °C

A Review of Selective Laser Melted NiTi Shape Memory Alloy

Science.gov (United States)

Khoo, Zhong Xun; Shen, Yu Fang

2018-01-01

NiTi shape memory alloys (SMAs) have the best combination of properties among the different SMAs. However, the limitations of conventional manufacturing processes and the poor manufacturability of NiTi have critically limited its full potential applicability. Thus, additive manufacturing, commonly known as 3D printing, has the potential to be a solution in fabricating complex NiTi smart structures. Recently, a number of studies on Selective Laser Melting (SLM) of NiTi were conducted to explore the various aspects of SLM-produced NiTi. Compared to producing conventional metals through the SLM process, the fabrication of NiTi SMA is much more challenging. Not only do the produced parts require a high density that leads to good mechanical properties, strict composition control is needed as well for the SLM NiTi to possess suitable phase transformation characteristics. Additionally, obtaining a good shape memory effect from the SLM NiTi samples is another challenging task that requires further understanding. This paper presents the results of the effects of energy density and SLM process parameters on the properties of SLM NiTi. Its shape memory properties and potential applications were then reviewed and discussed. PMID:29596320

High density operation on the HT-7 superconducting tokamak

International Nuclear Information System (INIS)

Xiang Gao

2000-01-01

The structure of the operation region has been studied in the HT-7 superconducting tokamak, and progress on the extension of the HT-7 ohmic discharge operation region is reported. A density corresponding to 1.2 times the Greenwald limit was achieved by RF boronization. The density limit appears to be connected to the impurity content and the edge parameters, so the best results are obtained with very clean plasmas and peaked electron density profiles. The peaking factors of electron density profiles for different current and line averaged densities were observed. The density behaviour and the fuelling efficiency for gas puffing (20-30%), pellet injection (70-80%) and molecular beam injection (40-50%) were studied. The core crash sawteeth and MHD behaviour, which were induced by an injected pellet, were observed and the events correlated with the change of current profile and reversed magnetic shear. The MARFE phenomena on HT-7 are summarized. The best correlation has been found between the total input ohmic power and the product of the edge line averaged density and Z eff . HT-7 could be easily operated in the high density region MARFE-free using RF boronization. (author)

Triglycerides, total cholesterol, high density lipoprotein cholesterol and low density lipoprotein cholesterol in rats exposed to premium motor spirit fumes.

Science.gov (United States)

Aberare, Ogbevire L; Okuonghae, Patrick; Mukoro, Nathaniel; Dirisu, John O; Osazuwa, Favour; Odigie, Elvis; Omoregie, Richard

2011-06-01

Deliberate and regular exposure to premium motor spirit fumes is common and could be a risk factor for liver disease in those who are occupationally exposed. A possible association between premium motor spirit fumes and plasma levels of triglyceride, total cholesterol, high density lipoprotein cholesterol and low density lipoprotein cholesterol using a rodent model could provide new insights in the pathology of diseases where cellular dysfunction is an established risk factor. The aim of this study was to evaluate the possible effect of premium motor spirit fumes on lipids and lipoproteins in workers occupationally exposed to premium motor spirit fumes using rodent model. Twenty-five Wister albino rats (of both sexes) were used for this study between the 4(th) of August and 7(th) of September, 2010. The rats were divided into five groups of five rats each. Group 1 rats were not exposed to premium motor spirit fumes (control group), group 2 rats were exposed for 1 hour daily, group 3 for 3 hours daily, group 4 for 5 hours daily and group 5 for 7 hours daily. The experiment lasted for a period of 4 weeks. Blood samples obtained from all the groups after 4 weeks of exposure were used for the estimation of plasma levels of triglyceride, total cholesterol, high density lipoprotein- cholesterol and low density lipoprotein- cholesterol. Results showed significant increase in means of plasma total cholesterol and low density lipoprotein levels (P<0.05). The mean triglyceride and total body weight were significantly lower (P<0.05) in the exposed group when compared with the unexposed. The plasma level of high density lipoprotein, the ratio of low density lipoprotein to high density lipoprotein and the ratio of total cholesterol to high density lipoprotein did not differ significantly in exposed subjects when compared with the control group. These results showed that frequent exposure to petrol fumes may be highly deleterious to the liver cells.

High-density amorphous ice: nucleation of nanosized low-density amorphous ice

Science.gov (United States)

Tonauer, Christina M.; Seidl-Nigsch, Markus; Loerting, Thomas

2018-01-01

The pressure dependence of the crystallization temperature of different forms of expanded high-density amorphous ice (eHDA) was scrutinized. Crystallization at pressures 0.05-0.30 GPa was followed using volumetry and powder x-ray diffraction. eHDA samples were prepared via isothermal decompression of very high-density amorphous ice at 140 K to different end pressures between 0.07-0.30 GPa (eHDA0.07-0.3). At 0.05-0.17 GPa the crystallization line T x (p) of all eHDA variants is the same. At pressures  >0.17 GPa, all eHDA samples decompressed to pressures  <0.20 GPa exhibit significantly lower T x values than eHDA0.2 and eHDA0.3. We rationalize our findings with the presence of nanoscaled low-density amorphous ice (LDA) seeds that nucleate in eHDA when it is decompressed to pressures  <0.20 GPa at 140 K. Below ~0.17 GPa, these nanosized LDA domains are latent within the HDA matrix, exhibiting no effect on T x of eHDA<0.2. Upon heating at pressures  ⩾0.17 GPa, these nanosized LDA nuclei transform to ice IX nuclei. They are favored sites for crystallization and, hence, lower T x . By comparing crystallization experiments of bulk LDA with the ones involving nanosized LDA we are able to estimate the Laplace pressure and radius of ~0.3-0.8 nm for the nanodomains of LDA. The nucleation of LDA in eHDA revealed here is evidence for the first-order-like nature of the HDA  →  LDA transition, supporting water’s liquid-liquid transition scenarios.

Properties of high-density matter in the electroweak symmetric phase

International Nuclear Information System (INIS)

Chandra, D.; Goyal, A.

1992-01-01

We examine the bulk properties of matter at high densities and finite temperatures in the phase where electroweak symmetry is exact and fermions are massless, by taking the strong interactions into account perturbatively to lowest order in the quark-gluon chromodynamic coupling constant α c . We also discuss the possibility of a phase transition of strange quark matter into this high-density matter in the electroweak symmetric phase at densities likely to be present in the core of dense neutron stars or collapsing stars. Finally, we study the properties of finite-size chunks of this matter by taking surface effects into account and give an estimate of the surface tension

High-energy-density physics foundation of inertial fusion and experimental astrophysics

CERN Document Server

Drake, R Paul

2018-01-01

The raw numbers of high-energy-density physics are amazing: shock waves at hundreds of km/s (approaching a million km per hour), temperatures of millions of degrees, and pressures that exceed 100 million atmospheres. This title surveys the production of high-energy-density conditions, the fundamental plasma and hydrodynamic models that can describe them and the problem of scaling from the laboratory to the cosmos. Connections to astrophysics are discussed throughout. The book is intended to support coursework in high-energy-density physics, to meet the needs of new researchers in this field, and also to serve as a useful reference on the fundamentals. Specifically the book has been designed to enable academics in physics, astrophysics, applied physics and engineering departments to provide in a single-course, an introduction to fluid mechanics and radiative transfer, with dramatic applications in the field of high-energy-density systems. This second edition includes pedagogic improvements to the presentation ...

High-density polymorphisms analysis of 23 candidate genes for association with bone mineral density.

Science.gov (United States)

Giroux, Sylvie; Elfassihi, Latifa; Clément, Valérie; Bussières, Johanne; Bureau, Alexandre; Cole, David E C; Rousseau, François

2010-11-01

Osteoporosis is a bone disease characterized by low bone mineral density (BMD), a highly heritable and polygenic trait. Women are more prone than men to develop osteoporosis due to a lower peak bone mass and accelerated bone loss at menopause. Peak bone mass has been convincingly shown to be due to genetic factors with heritability up to 80%. Menopausal bone loss has been shown to have around 38% to 49% heritability depending on the site studied. To have more statistical power to detect small genetic effects we focused on premenopausal women. We studied 23 candidate genes, some involved in calcium and vitamin-D regulation and others because estrogens strongly induced their gene expression in mice where it was correlated with humerus trabecular bone density. High-density polymorphisms were selected to cover the entire gene variability and 231 polymorphisms were genotyped in a first sample of 709 premenopausal women. Positive associations were retested in a second, independent, sample of 673 premenopausal women. Ten polymorphisms remained associated with BMD in the combined samples and one was further associated in a large sample of postmenopausal women (1401 women). This associated polymorphism was located in the gene CSF3R (granulocyte colony stimulating factor receptor) that had never been associated with BMD before. The results reported in this study suggest a role for CSF3R in the determination of bone density in women. Copyright © 2010 Elsevier Inc. All rights reserved.

The measurement and modeling of alpha-particle-induced charge collection in dynamic memories

International Nuclear Information System (INIS)

Oldiges, P.J.

1989-01-01

This thesis addresses the problem of α-particle-induced charge collection in high-density dynamic random access memories. A novel technique for the measurement of charge collection in high-density memory cells and bit lines due to α-particle strikes was developed. The technique involves D.C. tests on simple test structures with an α-particle source on the device package as a lid. The advantages of this new measurement technique are: the method allows for in-situ measurements of charge collection on both MOS capacitors and bit lines found in present-day memories; the on-chip measurement technique minimizes errors due to external probes loading the device under test; the measurements can be controlled by a personal computer, with the data being able to be reduced on the same machine. Results obtained using this new measurement technique show that the charge collection is found to depend upon test-structure size and the configuration of its neighbors. Results of two-dimensional simulations of charge flow along the surface of an MOS capacitor from current injection due to an α-particle strike indicate that a spatial potential variation of 0.5V may occur between the point of current injection and capacitor edge for a 1M dRAM capacitor

CHARACTER OF THE CHANGES IN FEAR MOTIVATED DECLARATIVE MEMORY IN THE HIGH IMMOBILIZATION "DEPRESSIVE" RATS.

Science.gov (United States)

Nachkebia, N; Shavgulidze, M; Babilodze, M; Chkhartishvili, E; Rogava, N

2016-10-01

Present study investigated possible differences in the learning and memory of declarative memory task in rats selected according to the differences in immobilization response that is in high immobilization "depressive" and low immobilization "non-depressive" rats. Understanding the character of learning and memory disturbances in basal conditions of animal models of depression is still very topical for more intimate definition of the pathophysiology of major depressive disorder and appropriate searching the ways of its correction. Experiments were carried out on the adult white wild rats (with the weight 200-250 g, n=20). Selection of rats according to the level of immobilization was made by means of forced swim test. Learning and memory disturbances were studied using passive avoidance test that is fear motivated one trial declarative memory task. It was shown by us that 100% of low immobilization "non-depressive" rats remember painful stimulation and therefore they are not enter in the dark compartment during whole period of observation during testing session. Behavior of high immobilization "depressive" rats is not similar in passive avoidance camera; 50% of "depressive" rats, with long escape latency during training session (92±10 sec), remember painful stimulation during testing session and therefore they are not enter in the dark compartment during whole observation period. The remaining 50%, that are not differ significantly from the low immobility "non-depressive" rats by the latency of escape (5±1 sec) during training session, are not able to remember painful stimulation during testing session and therefore they enter in the dark compartment with shortest escape latency (6±1 sec). In conclusion, high immobility "depressive" rats perform passive avoidance declarative memory task at the chance level that is a direct indicator for the serious disturbances of declarative memory mechanisms in "depressive" rats selected in forced swim test according to the

Cooperation in memory-based prisoner's dilemma game on interdependent networks

Science.gov (United States)

Luo, Chao; Zhang, Xiaolin; Liu, Hong; Shao, Rui

2016-05-01

Memory or so-called experience normally plays the important role to guide the human behaviors in real world, that is essential for rational decisions made by individuals. Hence, when the evolutionary behaviors of players with bounded rationality are investigated, it is reasonable to make an assumption that players in system are with limited memory. Besides, in order to unravel the intricate variability of complex systems in real world and make a highly integrative understanding of their dynamics, in recent years, interdependent networks as a comprehensive network structure have obtained more attention in this community. In this article, the evolution of cooperation in memory-based prisoner's dilemma game (PDG) on interdependent networks composed by two coupled square lattices is studied. Herein, all or part of players are endowed with finite memory ability, and we focus on the mutual influence of memory effect and interdependent network reciprocity on cooperation of spatial PDG. We show that the density of cooperation can be significantly promoted within an optimal region of memory length and interdependent strength. Furthermore, distinguished by whether having memory ability/external links or not, each kind of players on networks would have distinct evolutionary behaviors. Our work could be helpful to understand the emergence and maintenance of cooperation under the evolution of memory-based players on interdependent networks.

Kinetics of the high- to low-density amorphous water transition

International Nuclear Information System (INIS)

Koza, M M; Schober, H; Fischer, H E; Hansen, T; Fujara, F

2003-01-01

In situ neutron diffraction experiments have been carried out to study the kinetics of the transformation of high-density amorphous (HDA) water into its low-density amorphous state at temperatures 87 K ≤ T ≤ 110 K. It is found that three different stages are comprised in this transformation, namely an annealing process of the high-density matrix followed by a first-order-like transition into a low-density state, which can be further annealed at higher temperatures T ≤ 127 K. The annealing kinetics of the HDA state follows the logarithm of time as found in other systems showing polyamorphism. According to the theory of transformation by nucleation and growth the apparent first-order transition follows an Avrami-Kolmogorov behaviour. An energy barrier ΔE ∼ 33 k Jmol -1 is estimated from the temperature dependence of this transition

Noise reduction in muon tomography for detecting high density objects

International Nuclear Information System (INIS)

Benettoni, M; Checchia, P; Cossutta, L; Furlan, M; Gonella, F; Pegoraro, M; Garola, A Rigoni; Ronchese, P; Vanini, S; Viesti, G; Bettella, G; Bonomi, G; Donzella, A; Subieta, M; Zenoni, A; Calvagno, G; Cortelazzo, G; Zanuttigh, P; Calvini, P; Squarcia, S

2013-01-01

The muon tomography technique, based on multiple Coulomb scattering of cosmic ray muons, has been proposed as a tool to detect the presence of high density objects inside closed volumes. In this paper a new and innovative method is presented to handle the density fluctuations (noise) of reconstructed images, a well known problem of this technique. The effectiveness of our method is evaluated using experimental data obtained with a muon tomography prototype located at the Legnaro National Laboratories (LNL) of the Istituto Nazionale di Fisica Nucleare (INFN). The results reported in this paper, obtained with real cosmic ray data, show that with appropriate image filtering and muon momentum classification, the muon tomography technique can detect high density materials, such as lead, albeit surrounded by light or medium density material, in short times. A comparison with algorithms published in literature is also presented

Low-frequency oscillations at high density in JFT-2

International Nuclear Information System (INIS)

Maeno, Masaki; Katagiri, Masaki; Suzuki, Norio; Fujisawa, Noboru

1977-12-01

Low-frequency oscillations in a plasma were measured with magnetic probes and Si surface-barrier detectors, and behaviour of the high density plasmas was studied. The plasma current profile in the phase of decreasing density after the interruption of gas input is more peaked than during gas input. The introduction of hydrogen during a discharge results in a reduction of the impurities flux. The increase of density by fast gas input is limited with a negative voltage spike. Immediately before a negative voltage spike, oscillations of m=1,2 grow, leading to the spike. (auth.)

High-Temperature Shape Memory Alloys

Science.gov (United States)

Biffi, C. A.; Tuissi, A.

2014-10-01

In this paper, an experimental study of laser micro-processing on a Cu-Zr-based shape memory alloy (SMA), which is suitable for high-temperature (HT) applications, is discussed. A first evaluation of the interaction between a laser beam and Zr50Cu28Ni7Co15 HT SMA is highlighted. Single laser pulses at various levels of power and pulse duration were applied to evaluate their effect on the sample surfaces. Blind and through microholes were produced with sizes on the order of a few hundreds of microns; the results were characterized from the morphological viewpoint using a scanning electron microscope. The high beam quality allows the holes to be created with good circularity and little melted material around the hole periphery. An analysis of the chemical composition was performed using energy dispersive spectroscopy, revealing that compositional changes were limited, while important oxidation occurred on the hole surfaces. Additionally, laser micro-cutting tests were also proposed to evaluate the cut edge morphology and dimensions. The main result of this paper concerned the good behavior of the material upon interaction with the laser beam, which suggests that microfeatures can be successfully produced in this alloy.

Volume generation of negative ions in high density hydrogen discharges

International Nuclear Information System (INIS)

Hiskes, J.R.; Karo, A.M.

1983-01-01

A parametric survey is made of a high-density tandem two-chamber hydrogen negative ion system. The optimum extracted negative ion current densities are sensitive to the atom concentration in the discharge and to the system scale length. For scale lengths ranging from 10 cm to 0.1 cm optimum current densities range from of order 1 to 100 mA cm -2 , respectively

Achieving High-Energy-High-Power Density in a Flexible Quasi-Solid-State Sodium Ion Capacitor.

Science.gov (United States)

Li, Hongsen; Peng, Lele; Zhu, Yue; Zhang, Xiaogang; Yu, Guihua

2016-09-14

Simultaneous integration of high-energy output with high-power delivery is a major challenge for electrochemical energy storage systems, limiting dual fine attributes on a device. We introduce a quasi-solid-state sodium ion capacitor (NIC) based on a battery type urchin-like Na2Ti3O7 anode and a capacitor type peanut shell derived carbon cathode, using a sodium ion conducting gel polymer as electrolyte, achieving high-energy-high-power characteristics in solid state. Energy densities can reach 111.2 Wh kg(-1) at power density of 800 W kg(-1), and 33.2 Wh kg(-1) at power density of 11200 W kg(-1), which are among the best reported state-of-the-art NICs. The designed device also exhibits long-term cycling stability over 3000 cycles with capacity retention ∼86%. Furthermore, we demonstrate the assembly of a highly flexible quasi-solid-state NIC and it shows no obvious capacity loss under different bending conditions.

Neuropeptide S interacts with the basolateral amygdala noradrenergic system in facilitating object recognition memory consolidation.

Science.gov (United States)

Han, Ren-Wen; Xu, Hong-Jiao; Zhang, Rui-San; Wang, Pei; Chang, Min; Peng, Ya-Li; Deng, Ke-Yu; Wang, Rui

2014-01-01

The noradrenergic activity in the basolateral amygdala (BLA) was reported to be involved in the regulation of object recognition memory. As the BLA expresses high density of receptors for Neuropeptide S (NPS), we investigated whether the BLA is involved in mediating NPS's effects on object recognition memory consolidation and whether such effects require noradrenergic activity. Intracerebroventricular infusion of NPS (1nmol) post training facilitated 24-h memory in a mouse novel object recognition task. The memory-enhancing effect of NPS could be blocked by the β-adrenoceptor antagonist propranolol. Furthermore, post-training intra-BLA infusions of NPS (0.5nmol/side) improved 24-h memory for objects, which was impaired by co-administration of propranolol (0.5μg/side). Taken together, these results indicate that NPS interacts with the BLA noradrenergic system in improving object recognition memory during consolidation. Copyright © 2013 Elsevier Inc. All rights reserved.

Transport analysis of high radiation and high density plasmas in the ASDEX Upgrade tokamak

Directory of Open Access Journals (Sweden)

Casali L.

2014-01-01

Full Text Available Future fusion reactors, foreseen in the “European road map” such as DEMO, will operate under more demanding conditions compared to present devices. They will require high divertor and core radiation by impurity seeding to reduce heat loads on divertor target plates. In addition, DEMO will have to work at high core densities to reach adequate fusion performance. The performance of fusion reactors depends on three essential parameters: temperature, density and energy confinement time. The latter characterizes the loss rate due to both radiation and transport processes. The DEMO foreseen scenarios described above were not investigated so far, but are now addressed at the ASDEX Upgrade tokamak. In this work we present the transport analysis of such scenarios. Plasma with high radiation by impurity seeding: transport analysis taking into account the radiation distribution shows no change in transport during impurity seeding. The observed confinement improvement is an effect of higher pedestal temperatures which extend to the core via stiffness. A non coronal radiation model was developed and compared to the bolometric measurements in order to provide a reliable radiation profile for transport calculations. High density plasmas with pellets: the analysis of kinetic profiles reveals a transient phase at the start of the pellet fuelling due to a slower density build up compared to the temperature decrease. The low particle diffusion can explain the confinement behaviour.

Metal hydrides based high energy density thermal battery

International Nuclear Information System (INIS)

Fang, Zhigang Zak; Zhou, Chengshang; Fan, Peng; Udell, Kent S.; Bowman, Robert C.; Vajo, John J.; Purewal, Justin J.; Kekelia, Bidzina

2015-01-01

Highlights: • The principle of the thermal battery using advanced metal hydrides was demonstrated. • The thermal battery used MgH 2 and TiMnV as a working pair. • High energy density can be achieved by the use of MgH 2 to store thermal energy. - Abstract: A concept of thermal battery based on advanced metal hydrides was studied for heating and cooling of cabins in electric vehicles. The system utilized a pair of thermodynamically matched metal hydrides as energy storage media. The pair of hydrides that was identified and developed was: (1) catalyzed MgH 2 as the high temperature hydride material, due to its high energy density and enhanced kinetics; and (2) TiV 0.62 Mn 1.5 alloy as the matching low temperature hydride. Further, a proof-of-concept prototype was built and tested, demonstrating the potential of the system as HVAC for transportation vehicles

Hydrate-melt electrolytes for high-energy-density aqueous batteries

Science.gov (United States)

Yamada, Yuki; Usui, Kenji; Sodeyama, Keitaro; Ko, Seongjae; Tateyama, Yoshitaka; Yamada, Atsuo

2016-10-01

Aqueous Li-ion batteries are attracting increasing attention because they are potentially low in cost, safe and environmentally friendly. However, their low energy density (water and the limited selection of suitable negative electrodes, is problematic for their future widespread application. Here, we explore optimized eutectic systems of several organic Li salts and show that a room-temperature hydrate melt of Li salts can be used as a stable aqueous electrolyte in which all water molecules participate in Li+ hydration shells while retaining fluidity. This hydrate-melt electrolyte enables a reversible reaction at a commercial Li4Ti5O12 negative electrode with a low reaction potential (1.55 V versus Li+/Li) and a high capacity (175 mAh g-1). The resultant aqueous Li-ion batteries with high energy density (>130 Wh kg-1) and high voltage (˜2.3-3.1 V) represent significant progress towards performance comparable to that of commercial non-aqueous batteries (with energy densities of ˜150-400 Wh kg-1 and voltages of ˜2.4-3.8 V).

High Working Memory Capacity Predicts Less Retrieval Induced Forgetting

NARCIS (Netherlands)

Mall, Jonathan T.; Morey, Candice C.

2013-01-01

Background : Working Memory Capacity (WMC) is thought to be related to executive control and focused memory search abilities. These two hypotheses make contrasting predictions regarding the effects of retrieval on forgetting. Executive control during memory retrieval is believed to lead to retrieval

Evaporation of carbon using electrons of a high density plasma

International Nuclear Information System (INIS)

Muhl, S.; Camps, E.; Escobar A, L.; Garcia E, J.L.; Olea, O.

1999-01-01

The high density plasmas are used frequently in the preparation of thin films or surface modification, for example to nitridation. In these processes, are used mainly the ions and the neutrals which compose the plasma. However, the electrons present in the plasma are not used, except in the case of chemical reactions induced by collisions, although the electron bombardment usually get hot the work piece. Through the adequate polarization of a conductor material, it is possible to extract electrons from a high density plasma at low pressure, that could be gotten the evaporation of this material. As result of the interaction between the plasma and the electron flux with the vapor produced, this last will be ionized. In this work, it is reported the use of this novelty arrangement to prepare carbon thin films using a high density argon plasma and a high purity graphite bar as material to evaporate. It has been used substrates outside plasma and immersed in the plasma. Also it has been reported the plasma characteristics (temperature and electron density, energy and ions flux), parameters of the deposit process (deposit rate and ion/neutral rate) as well as the properties of the films obtained (IR absorption spectra and UV/Vis, elemental analysis, hardness and refractive index. (Author)

GABA level, gamma oscillation, and working memory performance in schizophrenia.

Science.gov (United States)

Chen, Chi-Ming A; Stanford, Arielle D; Mao, Xiangling; Abi-Dargham, Anissa; Shungu, Dikoma C; Lisanby, Sarah H; Schroeder, Charles E; Kegeles, Lawrence S

2014-01-01

A relationship between working memory impairment, disordered neuronal oscillations, and abnormal prefrontal GABA function has been hypothesized in schizophrenia; however, in vivo GABA measurements and gamma band neural synchrony have not yet been compared in schizophrenia. This case-control pilot study (N = 24) compared baseline and working memory task-induced neuronal oscillations acquired with high-density electroencephalograms (EEGs) to GABA levels measured in vivo with magnetic resonance spectroscopy. Working memory performance, baseline GABA level in the left dorsolateral prefrontal cortex (DLPFC), and measures of gamma oscillations from EEGs at baseline and during a working memory task were obtained. A major limitation of this study is a relatively small sample size for several analyses due to the integration of diverse methodologies and participant compliance. Working memory performance was significantly lower for patients than for controls. During the working memory task, patients (n = 7) had significantly lower amplitudes in gamma oscillations than controls (n = 9). However, both at rest and across working memory stages, there were significant correlations between gamma oscillation amplitude and left DLPFC GABA level. Peak gamma frequency during the encoding stage of the working memory task (n = 16) significantly correlated with GABA level and working memory performance. Despite gamma band amplitude deficits in patients across working memory stages, both baseline and working memory-induced gamma oscillations showed strong dependence on baseline GABA levels in patients and controls. These findings suggest a critical role for GABA function in gamma band oscillations, even under conditions of system and cognitive impairments as seen in schizophrenia.