Superconducting Multilayer High-Density Flexible Printed Circuit Board for Very High Thermal Resistance Interconnections

Science.gov (United States)

de la Broïse, Xavier; Le Coguie, Alain; Sauvageot, Jean-Luc; Pigot, Claude; Coppolani, Xavier; Moreau, Vincent; d'Hollosy, Samuel; Knarosovski, Timur; Engel, Andreas

2018-05-01

We have successively developed two superconducting flexible PCBs for cryogenic applications. The first one is monolayer, includes 552 tracks (10 µm wide, 20 µm spacing), and receives 24 wire-bonded integrated circuits. The second one is multilayer, with one track layer between two shielding layers interconnected by microvias, includes 37 tracks, and can be interconnected at both ends by wire bonding or by connectors. The first cold measurements have been performed and show good performances. The novelty of these products is, for the first one, the association of superconducting materials with very narrow pitch and bonded integrated circuits and, for the second one, the introduction of a superconducting multilayer structure interconnected by vias which is, to our knowledge, a world-first.

Spatial charge motion on an uniform density matrix-general equations in opened and closed circuits

International Nuclear Information System (INIS)

Aguiar Monsanto, S. de.

1983-01-01

The motion of a space charge cloud embedded in a matrix of constant immobile charge density is studied in open as well as in closed circuit. In the first case, open circuit, the solution is almost trivial as compared as the other one in which, after some work, the problem is reduced to an ordinary differential equation. The method of solution is parallel to that employed in the study of monopolar free space charge motion. The voltage and the current produced by a system with no net charge but with unbalanced local charge density were calculated using the general equations derived in the first part of the work. (Author) [pt

High Q-factor tunable superconducting HF circuit

CERN Document Server

Vopilkin, E A; Pavlov, S A; Ponomarev, L I; Ganitsev, A Y; Zhukov, A S; Vladimirov, V V; Letyago, A G; Parshikov, V V

2001-01-01

Feasibility of constructing a high Q-factor (Q approx 10 sup 5) mechanically tunable in a wide range of frequencies (12-63 MHz) vibration circuit of HF range was considered. The tunable circuit integrates two single circuits made using YBaCuO films. The circuit frequency is tuned by changing distance X (capacity) between substrates. Potentiality of using substrates of lanthanum aluminate, neodymium gallate and strontium titanate for manufacture of single circuits was considered. Q-factor of the circuit amounted to 68000 at resonance frequency of 6.88 MHz

High Q-factor tunable superconducting HF circuit

International Nuclear Information System (INIS)

Vopilkin, E.A.; Parafin, A.E.; Pavlov, S.A.; Ponomarev, L.I.; Ganitsev, A.Yu.; Zhukov, A.S.; Vladimirov, V.V.; Letyago, A.G.; Parshikov, V.V.

2001-01-01

Feasibility of constructing a high Q-factor (Q ∼ 10 5 ) mechanically tunable in a wide range of frequencies (12-63 MHz) vibration circuit of HF range was considered. The tunable circuit integrates two single circuits made using YBaCuO films. The circuit frequency is tuned by changing distance X (capacity) between substrates. Potentiality of using substrates of lanthanum aluminate, neodymium gallate and strontium titanate for manufacture of single circuits was considered. Q-factor of the circuit amounted to 68000 at resonance frequency of 6.88 MHz [ru

Controlled Conjugated Backbone Twisting for an Increased Open-Circuit Voltage while Having a High Short-Circuit Current in Poly(hexylthiophene) Derivatives

KAUST Repository

Ko, Sangwon

2012-03-21

Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone-due to an increase in the polymer ionization potential-while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2′:5′,2′′- terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C 71-butyric acid methyl ester (PC 71BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current. © 2012 American

Controlled conjugated backbone twisting for an increased open-circuit voltage while having a high short-circuit current in poly(hexylthiophene) derivatives.

Science.gov (United States)

Ko, Sangwon; Hoke, Eric T; Pandey, Laxman; Hong, Sanghyun; Mondal, Rajib; Risko, Chad; Yi, Yuanping; Noriega, Rodrigo; McGehee, Michael D; Brédas, Jean-Luc; Salleo, Alberto; Bao, Zhenan

2012-03-21

Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone--due to an increase in the polymer ionization potential--while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2':5',2''-terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C(71)-butyric acid methyl ester (PC(71)BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current.

Switching phenomena in high-voltage circuit breakers

International Nuclear Information System (INIS)

Nakanishi, K.

1991-01-01

The topics covered in this book include: general problems concerning current interruption, the physical arc model, and miscellaneous types of modern switching apparatus, such as gas circuit breakers, gas-insulated switch-gear, vacuum circuit breakers and high-voltage direct-current circuit breakers

A High Power Density Integrated Charger for Electric Vehicles with Active Ripple Compensation

OpenAIRE

Pan, Liwen; Zhang, Chengning

2015-01-01

This paper suggests a high power density on-board integrated charger with active ripple compensation circuit for electric vehicles. To obtain a high power density and high efficiency, silicon carbide devices are reported to meet the requirement of high-switching-frequency operation. An integrated bidirectional converter is proposed to function as AC/DC battery charger and to transfer energy between battery pack and motor drive of the traction system. In addition, the conventional H-bridge cir...

Plasma Diagnostics in High Density Reactors

International Nuclear Information System (INIS)

Daltrini, A. M.; Moshkalyov, S.; Monteiro, M. J. R.; Machida, M.; Kostryukov, A.; Besseler, E.; Biasotto, C.; Diniz, J. A.

2006-01-01

Langmuir electric probes and optical emission spectroscopy diagnostics were developed for applications in high density plasmas. These diagnostics were employed in two plasma sources: an electron cyclotron resonance (ECR) plasma and an RF driven inductively coupled plasma (ICP) plasma. Langmuir probes were tested using a number of probing dimensions, probe tip materials, circuits for probe bias and filters. Then, the results were compared with the optical spectroscopy measurements. With these diagnostics, analyses of various plasma processes were performed in both reactors. For example, it has been shown that species like NH radicals generated in gas phase can have critical impact on films deposited by ECR plasmas. In the ICP source, plasmas in atomic and molecular gases were shown to have different spatial distributions, likely due to nonlocal electron heating. The low-to-high density transitions in the ICP plasma were also studied. The role of metastables is shown to be significant in Ar plasmas, in contrast to plasmas with additions of molecular gases

Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's.

Science.gov (United States)

Absil, Philippe P; Verheyen, Peter; De Heyn, Peter; Pantouvaki, Marianna; Lepage, Guy; De Coster, Jeroen; Van Campenhout, Joris

2015-04-06

Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

Defects influence on short circuit current density in p-i-n silicon solar cell

International Nuclear Information System (INIS)

Wagah F Mohamad; Alhan M Mustafa

2006-01-01

The admittance analysis method has been used to calculate the collection efficiency and the short circuit current density in a-Si:H p-i-n solar cell, as a function of the thickness of i-layer. Its is evident that the results of the short circuit current can be used to determine the optimal thickness of the i-layer of a cell, and it will be more accurate in comparison with the previous studies using a constant generation rate or an empirical exponential function for the generation of charge carriers throughout the i-layer

High performance protection circuit for power electronics applications

Energy Technology Data Exchange (ETDEWEB)

Tudoran, Cristian D., E-mail: cristian.tudoran@itim-cj.ro; Dădârlat, Dorin N.; Toşa, Nicoleta; Mişan, Ioan [National Institute for Research and Development of Isotopic and Molecular Technologies, 67-103 Donat, PO 5 Box 700, 400293 Cluj-Napoca (Romania)

2015-12-23

In this paper we present a high performance protection circuit designed for the power electronics applications where the load currents can increase rapidly and exceed the maximum allowed values, like in the case of high frequency induction heating inverters or high frequency plasma generators. The protection circuit is based on a microcontroller and can be adapted for use on single-phase or three-phase power systems. Its versatility comes from the fact that the circuit can communicate with the protected system, having the role of a “sensor” or it can interrupt the power supply for protection, in this case functioning as an external, independent protection circuit.

Extra-high short-circuit current for bifacial solar cells in sunny and dark-light conditions.

Science.gov (United States)

Duan, Jialong; Duan, Yanyan; Zhao, Yuanyuan; He, Benlin; Tang, Qunwei

2017-09-05

We present here a symmetrically structured bifacial solar cell tailored by two fluorescent photoanodes and a platinum/titanium/platinum counter electrode, yielding extra-high short-circuit current densities as high as 28.59 mA cm -2 and 119.9 μA cm -2 in simulated sunlight irradiation (100 mW cm -2 , AM1.5) and dark-light conditions, respectively.

Integrated differential high-voltage transmitting circuit for CMUTs

DEFF Research Database (Denmark)

Llimos Muntal, Pere; Larsen, Dennis Øland; Farch, Kjartan

2015-01-01

In this paper an integrated differential high-voltage transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is designed and implemented in a 0.35 μm high-voltage process. Measurements are performed on the integrated circuit in order...... to assess its performance. The circuit generates pulses at differential voltage levels of 60V, 80V and 100 V, a frequency up to 5MHz and a measured driving strength of 1.75 V/ns with the CMUT connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption...

A high-precision synchronization circuit for clock distribution

International Nuclear Information System (INIS)

Lu Chong; Tan Hongzhou; Duan Zhikui; Ding Yi

2015-01-01

In this paper, a novel structure of a high-precision synchronization circuit, HPSC, using interleaved delay units and a dynamic compensation circuit is proposed. HPSCs are designed for synchronization of clock distribution networks in large-scale integrated circuits, where high-quality clocks are required. The application of a hybrid structure of a coarse delay line and dynamic compensation circuit performs roughly the alignment of the clock signal in two clock cycles, and finishes the fine tuning in the next three clock cycles with the phase error suppressed under 3.8 ps. The proposed circuit is implemented and fabricated using a SMIC 0.13 μm 1P6M process with a supply voltage at 1.2 V. The allowed operation frequency ranges from 200 to 800 MHz, and the duty cycle ranges between [20%, 80%]. The active area of the core circuits is 245 × 134 μm 2 , and the power consumption is 1.64 mW at 500 MHz. (paper)

High performance multi-channel high-speed I/O circuits

CERN Document Server

Oh, Taehyoun

2013-01-01

This book describes design techniques that can be used to mitigate crosstalk in high-speed I/O circuits. The focus of the book is in developing compact and low power integrated circuits for crosstalk cancellation, inter-symbol interference (ISI) mitigation and improved bit error rates (BER) at higher speeds. This book is one of the first to discuss in detail the problem of crosstalk and ISI mitigation encountered as data rates have continued beyond 10Gb/s. Readers will learn to avoid the data performance cliff, with circuits and design techniques described for novel, low power crosstalk cancel

Interacting two-level defects as sources of fluctuating high-frequency noise in superconducting circuits

Energy Technology Data Exchange (ETDEWEB)

Mueller, Clemens [ARC Centre of Excellence for Engineered Quantum Systems, The University of Queensland, Brisbane (Australia); Lisenfeld, Juergen [Physikalisches Institut, Karlsruhe Institute of Technology, Karlsruhe (Germany); Shnirman, Alexander [Institut fuer Theory der Kondensierten Materie, Karlsruhe Institute of Technology, Karlsruhe (Germany); LD Landau Institute for Theoretical Physics, Moscow (Russian Federation); Poletto, Stefano [IBM TJ Watson Research Centre, Yorktown Heights (United States)

2016-07-01

Since the very first experiments, superconducting circuits have suffered from strong coupling to environmental noise, destroying quantum coherence and degrading performance. In state-of-the-art experiments, it is found that the relaxation time of superconducting qubits fluctuates as a function of time. We present measurements of such fluctuations in a 3D-transmon circuit and develop a qualitative model based on interactions within a bath of background two-level systems (TLS) which emerge from defects in the device material. In our model, the time-dependent noise density acting on the qubit emerges from its near-resonant coupling to high-frequency TLS which experience energy fluctuations due to their interaction with thermally fluctuating TLS at low frequencies. We support the model by providing experimental evidence of such energy fluctuations observed in a single TLS in a phase qubit circuit.

Integrated reconfigurable high-voltage transmitting circuit for CMUTs

DEFF Research Database (Denmark)

Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

2015-01-01

In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes with voltages up to 100 V, maximum pulse range of 50 V, frequencies up to 5 MHz and different driving slew rates. Measurements are performed on the circuit in order to assess its functionality and power consumption...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

High voltage short plus generation based on avalanche circuit

International Nuclear Information System (INIS)

Hu Yuanfeng; Yu Xiaoqi

2006-01-01

Simulate the avalanche circuit in series with PSPICE module, design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera. The output voltage ranges 1.2 KV into 50 ohm load. The rise time of the circuit is less than 3 ns. (authors)

Optimal planning of series resistor to control time constant of test circuit for high-voltage AC circuit-breakers

OpenAIRE

Yoon-Ho Kim; Jung-Hyeon Ryu; Jin-Hwan Kim; Kern-Joong Kim

2016-01-01

The equivalent test circuit that can deliver both short-circuit current and recovery voltage is used to verify the performance of high-voltage circuit breakers. Most of the parameters in this circuit can be obtained by using a simple calculation or a simulation program. The ratings of the circuit breaker include rated short-circuit breaking current, rated short-circuit making current, rated operating sequence of the circuit breaker and rated short-time current. Among these ratings, the short-...

Vertically integrated circuit development at Fermilab for detectors

International Nuclear Information System (INIS)

Yarema, R; Deptuch, G; Hoff, J; Khalid, F; Lipton, R; Shenai, A; Trimpl, M; Zimmerman, T

2013-01-01

Today vertically integrated circuits, (a.k.a. 3D integrated circuits) is a popular topic in many trade journals. The many advantages of these circuits have been described such as higher speed due to shorter trace lenghts, the ability to reduce cross talk by placing analog and digital circuits on different levels, higher circuit density without the going to smaller feature sizes, lower interconnect capacitance leading to lower power, reduced chip size, and different processing for the various layers to optimize performance. There are some added advantages specifically for MAPS (Monolithic Active Pixel Sensors) in High Energy Physics: four side buttable pixel arrays, 100% diode fill factor, the ability to move PMOS transistors out of the diode sensing layer, and a increase in channel density. Fermilab began investigating 3D circuits in 2006. Many different bonding processes have been described for fabricating 3D circuits [1]. Fermilab has used three different processes to fabricate several circuits for specific applications in High Energy Physics and X-ray imaging. This paper covers some of the early 3D work at Fermilab and then moves to more recent activities. The major processes we have used are discussed and some of the problems encountered are described. An overview of pertinent 3D circuit designs is presented along with test results thus far.

Photonic circuits for iterative decoding of a class of low-density parity-check codes

International Nuclear Information System (INIS)

Pavlichin, Dmitri S; Mabuchi, Hideo

2014-01-01

Photonic circuits in which stateful components are coupled via guided electromagnetic fields are natural candidates for resource-efficient implementation of iterative stochastic algorithms based on propagation of information around a graph. Conversely, such message=passing algorithms suggest novel circuit architectures for signal processing and computation that are well matched to nanophotonic device physics. Here, we construct and analyze a quantum optical model of a photonic circuit for iterative decoding of a class of low-density parity-check (LDPC) codes called expander codes. Our circuit can be understood as an open quantum system whose autonomous dynamics map straightforwardly onto the subroutines of an LDPC decoding scheme, with several attractive features: it can operate in the ultra-low power regime of photonics in which quantum fluctuations become significant, it is robust to noise and component imperfections, it achieves comparable performance to known iterative algorithms for this class of codes, and it provides an instructive example of how nanophotonic cavity quantum electrodynamic components can enable useful new information technology even if the solid-state qubits on which they are based are heavily dephased and cannot support large-scale entanglement. (paper)

Conductus makes high-Tc integrated circuit

International Nuclear Information System (INIS)

Anon.

1991-01-01

This paper reports that researchers at Conductus have successfully demonstrated what the company says is the world's first integrated circuit containing active devices made from high-temperature superconductors. The circuit is a SQUID magnetometer made from seven layers of material: three layers of yttrium-barium-copper oxide, two layers of insulating material, a seed layer to create grain boundaries for the Josephson junctions, and a layer of silver for making electrical contact to the device. The chip also contains vias, or pathways that make a superconducting contact between the superconducting layers otherwise separated by insulators. Conductus had previously announced the development of a SQUID magnetometer that featured a SQUID sensor and a flux transformer manufactured on separate chips. What makes this achievement important is that the company was able to put both components on the same chip, thus creating a simple integrated circuit on a single chip. This is still a long way from conventional semiconductor technology, with as many as a million components per chip, or even the sophisticated low-Tc superconducting chips made by the Japanese, but the SQUID magnetometer demonstrates all the elements and techniques necessary to build more complex high-temperature superconductor integrated circuits, making this an important first step

High-precision analog circuit technology for power supply integrated circuits; Dengen IC yo koseido anarogu kairo gijutsu

Energy Technology Data Exchange (ETDEWEB)

Nakamori, A.; Suzuki, T.; Mizoe, K. [Fuji Electric Corporate Research and Development,Ltd., Kanagawa (Japan)

2000-08-10

With the recent rapid spread of portable electronic appliances, specification requirements such as compact power supply and long operation with batteries have become severer. Power supply ICs (integrated circuits) are required to reduce power consumption in the circuit and perform high-precision control. To meet these requirements, Fuji Electric develops high-precision CMOS (complementary metal-oxide semiconductor) analog technology. This paper describes three analog circuit technologies of a voltage reference, an operational amplifier and a comparator as circuit components particularly important for the precision of power supply ICs. (author)

An innovative "ChemicalVia" process for the production of high density interconnect printed circuit boards The ATLAS muon chamber quality control with the X-ray tomograph at CERN

CERN Document Server

Da Silva, Vitor; Watts, David; Van der Bij, Erik; Banhidi, Z; Berbiers, Julien; Lampl, W; Marchesotti, M; Rangod, Stephane; Sbrissa, E; Schuh, S; Voss, Rüdiger; Zhuravlov, V

2004-01-01

The ChemicalVia process, patented by CERN, provides a new method of making microvias in high-density multilayer printed circuit boards of different types, such as sequential build-up (SBU), high density interconnected (HDI), or laminated multi-chip modules (MCM-L). The process uses chemical etching instead of laser, plasma or other etching techniques and can be implemented in a chain production line. This results in an overall reduced operation and maintenance cost and a much shorter hole production time as compared with other microvia processes. copy Emerald Group Publishing Limited. 4 Refs.4 An essential part of the Muon Spectrometer of the ATLAS experiment is based on the Monitored Drift Tube (MDT) technology. About 1200 muon drift chambers are being built at 13 institutes all over the world. The MDT chambers require an exceptional mechanical construction accuracy of better than 20 mu m. A dedicated X-ray tomograph has been developed at CERN since 1996 to control the mechanical quality of the chambers. The...

High transition temperature superconducting integrated circuit

International Nuclear Information System (INIS)

DiIorio, M.S.

1985-01-01

This thesis describes the design and fabrication of the first superconducting integrated circuit capable of operating at over 10K. The primary component of the circuit is a dc SQUID (Superconducting QUantum Interference Device) which is extremely sensitive to magnetic fields. The dc SQUID consists of two superconductor-normal metal-superconductor (SNS) Josephson microbridges that are fabricated using a novel step-edge process which permits the use of high transition temperature superconductors. By utilizing electron-beam lithography in conjunction with ion-beam etching, very small microbridges can be produced. Such microbridges lead to high performance dc SQUIDs with products of the critical current and normal resistance reaching 1 mV at 4.2 K. These SQUIDs have been extensively characterized, and exhibit excellent electrical characteristics over a wide temperature range. In order to couple electrical signals into the SQUID in a practical fashion, a planar input coil was integrated for efficient coupling. A process was developed to incorporate the technologically important high transition temperature superconducting materials, Nb-Sn and Nb-Ge, using integrated circuit techniques. The primary obstacles were presented by the metallurgical idiosyncrasies of the various materials, such as the need to deposit the superconductors at elevated temperatures, 800-900 0 C, in order to achieve a high transition temperature

High accuracy digital aging monitor based on PLL-VCO circuit

International Nuclear Information System (INIS)

Zhang Yuejun; Jiang Zhidi; Wang Pengjun; Zhang Xuelong

2015-01-01

As the manufacturing process is scaled down to the nanoscale, the aging phenomenon significantly affects the reliability and lifetime of integrated circuits. Consequently, the precise measurement of digital CMOS aging is a key aspect of nanoscale aging tolerant circuit design. This paper proposes a high accuracy digital aging monitor using phase-locked loop and voltage-controlled oscillator (PLL-VCO) circuit. The proposed monitor eliminates the circuit self-aging effect for the characteristic of PLL, whose frequency has no relationship with circuit aging phenomenon. The PLL-VCO monitor is implemented in TSMC low power 65 nm CMOS technology, and its area occupies 303.28 × 298.94 μm 2 . After accelerating aging tests, the experimental results show that PLL-VCO monitor improves accuracy about high temperature by 2.4% and high voltage by 18.7%. (semiconductor integrated circuits)

Characterization of oscillator circuits for monitoring the density-viscosity of liquids by means of piezoelectric MEMS microresonators

Science.gov (United States)

Toledo, J.; Ruiz-Díez, V.; Pfusterschmied, G.; Schmid, U.; Sánchez-Rojas, J. L.

2017-06-01

Real-time monitoring of the physical properties of liquids, such as lubricants, is a very important issue for the automotive industry. For example, contamination of lubricating oil by diesel soot has a significant impact on engine wear. Resonant microstructures are regarded as a precise and compact solution for tracking the viscosity and density of lubricant oils. In this work, we report a piezoelectric resonator, designed to resonate with the 4th order out-of-plane modal vibration, 15-mode, and the interface circuit and calibration process for the monitoring of oil dilution with diesel fuel. In order to determine the resonance parameters of interest, i.e. resonant frequency and quality factor, an interface circuit was implemented and included within a closed-loop scheme. Two types of oscillator circuits were tested, a Phase-Locked Loop based on instrumentation, and a more compact version based on discrete electronics, showing similar resolution. Another objective of this work is the assessment of a calibration method for piezoelectric MEMS resonators in simultaneous density and viscosity sensing. An advanced calibration model, based on a Taylor series of the hydrodynamic function, was established as a suitable method for determining the density and viscosity with the lowest calibration error. Our results demonstrate the performance of the resonator in different oil samples with viscosities up to 90 mPa•s. At the highest value, the quality factor measured at 25°C was around 22. The best resolution obtained was 2.4•10-6 g/ml for the density and 2.7•10-3 mPa•s for the viscosity, in pure lubricant oil SAE 0W30 at 90°C. Furthermore, the estimated density and viscosity values with the MEMS resonator were compared to those obtained with a commercial density-viscosity meter, reaching a mean calibration error in the best scenario of around 0.08% for the density and 3.8% for the viscosity.

Alternative ceramic circuit constructions for low cost, high reliability applications

International Nuclear Information System (INIS)

Modes, Ch.; O'Neil, M.

1997-01-01

The growth in the use of hybrid circuit technology has recently been challenged by recent advances in low cost laminate technology, as well as the continued integration of functions into IC's. Size reduction of hybrid 'packages' has turned out to be a means to extend the useful life of this technology. The suppliers of thick film materials technology have responded to this challenge by developing a number of technology options to reduce circuit size, increase density, and reduce overall cost, while maintaining or increasing reliability. This paper provides an overview of the processes that have been developed, and, in many cases are used widely to produce low cost, reliable microcircuits. Comparisons of each of these circuit fabrication processes are made with a discussion of advantages and disadvantages of each technology. (author)

A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2018-01-01

. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

Circuit and interconnect design for high bit-rate applications

NARCIS (Netherlands)

Veenstra, H.

2006-01-01

This thesis presents circuit and interconnect design techniques and design flows that address the most difficult and ill-defined aspects of the design of ICs for high bit-rate applications. Bottlenecks in interconnect design, circuit design and on-chip signal distribution for high bit-rate

Teaching RLC Parallel Circuits in High-School Physics Class

Science.gov (United States)

Simon, Alpár

2015-01-01

This paper will try to give an alternative treatment of the subject "parallel RLC circuits" and "resonance in parallel RLC circuits" from the Physics curricula for the XIth grade from Romanian high-schools, with an emphasis on practical type circuits and their possible applications, and intends to be an aid for both Physics…

High-speed Integrated Circuits for electrical/Optical Interfaces

DEFF Research Database (Denmark)

Jespersen, Christoffer Felix

2008-01-01

This thesis is a continuation of the effort to increase the bandwidth of communicationnetworks. The thesis presents the results of the design of several high-speed electrical ircuits for an electrical/optical interface. These circuits have been a contribution to the ESTA project in collaboration...... circuits at the receiver interface, though VCOs are also found in the transmitter where a multitude of independent sources have to be mutually synchronized before multiplexing. The circuits are based on an InP DHBT process (VIP-2) supplied by Vitesse and made publicly available as MPW. The VIP-2 process...... represents the avant-garde of InP technology, with ft and fmax well above 300 GHz. Principles of high speed design are presented and described as a useful background before proceeding to circuits. A static divider is used as an example to illustrate many of the design principles. Theory and fundamentals...

Phase transition in traffic jam experiment on a circuit

Science.gov (United States)

Tadaki, Shin-ichi; Kikuchi, Macoto; Fukui, Minoru; Nakayama, Akihiro; Nishinari, Katsuhiro; Shibata, Akihiro; Sugiyama, Yuki; Yosida, Taturu; Yukawa, Satoshi

2013-10-01

The emergence of a traffic jam is considered to be a dynamical phase transition in a physics point of view; traffic flow becomes unstable and changes phase into a traffic jam when the car density exceeds a critical value. In order to verify this view, we have been performing a series of circuit experiments. In our previous work (2008 New J. Phys. 10 033001), we demonstrated that a traffic jam emerges even in the absence of bottlenecks at a certain high density. In this study, we performed a larger indoor circuit experiment in the Nagoya Dome in which the positions of cars were observed using a high-resolution laser scanner. Over a series of sessions at various values of density, we found that jammed flow occurred at high densities, whereas free flow was conserved at low densities. We also found indications of metastability at an intermediate density. The critical density is estimated by analyzing the fluctuations in speed and the density-flow relation. The value of this critical density is consistent with that observed on real expressways. This experiment provides strong support for physical interpretations of the emergence of traffic jams as a dynamical phase transition.

Memristor-based nanoelectronic computing circuits and architectures

CERN Document Server

Vourkas, Ioannis

2016-01-01

This book considers the design and development of nanoelectronic computing circuits, systems and architectures focusing particularly on memristors, which represent one of today’s latest technology breakthroughs in nanoelectronics. The book studies, explores, and addresses the related challenges and proposes solutions for the smooth transition from conventional circuit technologies to emerging computing memristive nanotechnologies. Its content spans from fundamental device modeling to emerging storage system architectures and novel circuit design methodologies, targeting advanced non-conventional analog/digital massively parallel computational structures. Several new results on memristor modeling, memristive interconnections, logic circuit design, memory circuit architectures, computer arithmetic systems, simulation software tools, and applications of memristors in computing are presented. High-density memristive data storage combined with memristive circuit-design paradigms and computational tools applied t...

Achieving 12.8% Efficiency by Simultaneously Improving Open-Circuit Voltage and Short-Circuit Current Density in Tandem Organic Solar Cells.

Science.gov (United States)

Qin, Yunpeng; Chen, Yu; Cui, Yong; Zhang, Shaoqing; Yao, Huifeng; Huang, Jiang; Li, Wanning; Zheng, Zhong; Hou, Jianhui

2017-06-01

Tandem organic solar cells (TOSCs), which integrate multiple organic photovoltaic layers with complementary absorption in series, have been proved to be a strong contender in organic photovoltaic depending on their advantages in harvesting a greater part of the solar spectrum and more efficient photon utilization than traditional single-junction organic solar cells. However, simultaneously improving open circuit voltage (V oc ) and short current density (J sc ) is a still particularly tricky issue for highly efficient TOSCs. In this work, by employing the low-bandgap nonfullerene acceptor, IEICO, into the rear cell to extend absorption, and meanwhile introducing PBDD4T-2F into the front cell for improving V oc , an impressive efficiency of 12.8% has been achieved in well-designed TOSC. This result is also one of the highest efficiencies reported in state-of-the-art organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A mechanical arcless dc circuit breaker for a superconducting magnet system

International Nuclear Information System (INIS)

Yamaguchi, S.; Sasao, H.; Matumura, Y.; Tukamoto, T.

1993-01-01

Next fusion research experiments plan to use many superconducting magnets. When a quench phenomenon is observed, the current should be interrupted to protect the magnet. Therefore, a dc circuit breaker is necessary. There are four technical situations to be considered for the dc circuit breaker system; (1) high rated current, (2) smaller size breaker, (3) high reliability and (4) no surge voltage during the interruption. The sizer of the breaker is limited by the arc current density of the contacts, and the low current density is better in the circuit breakers. A high rated current also needs the large contacts of the breaker. Here, we introduce a new type of dc circuit breaker system which does not generate an arc plasma between the contacts, equip the high rated current disconnecting switch and a fuse for the failure of the interruption, and use the conventional ac breaker. The switch size of the breaker is almost one hundred times smaller than that of the previous switch. (orig.)

A New CDS Structure for High Density FPA with Low Power

Directory of Open Access Journals (Sweden)

Xiao Wang

2015-01-01

Full Text Available Being an essential part of infrared readout integrated circuit, correlated double sampling (CDS circuits play important roles in both depressing reset noise and conditioning integration signals. To adapt applications for focal planes of large format and high density, a new structure of CDS circuit occupying small layout area is proposed, whose power dissipation has been optimized by using MOSFETs in operation of subthreshold region, which leads to 720 nW. Then the noise calculation model is established, based on which the noise analysis has been carried out by the approaches of transfer function and numerical simulations using SIMULINK and Verilog-A. The results are in good agreement, demonstrating the validity of the present noise calculation model. Thermal noise plays a dominant role in the long wave situation while 1/f noise is the majority in the medium wave situation. The total noise of long wave is smaller than medium wave, both of which increase with the integration capacitor and integration time increasing.

Ultra-Stretchable Interconnects for High-Density Stretchable Electronics

Directory of Open Access Journals (Sweden)

Salman Shafqat

2017-09-01

Full Text Available The exciting field of stretchable electronics (SE promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS-type process recipes using bulk integrated circuit (IC microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.

Phase transition in traffic jam experiment on a circuit

International Nuclear Information System (INIS)

Tadaki, Shin-ichi; Kikuchi, Macoto; Fukui, Minoru; Yosida, Taturu; Nakayama, Akihiro; Nishinari, Katsuhiro; Shibata, Akihiro; Sugiyama, Yuki; Yukawa, Satoshi

2013-01-01

The emergence of a traffic jam is considered to be a dynamical phase transition in a physics point of view; traffic flow becomes unstable and changes phase into a traffic jam when the car density exceeds a critical value. In order to verify this view, we have been performing a series of circuit experiments. In our previous work (2008 New J. Phys. 10 033001), we demonstrated that a traffic jam emerges even in the absence of bottlenecks at a certain high density. In this study, we performed a larger indoor circuit experiment in the Nagoya Dome in which the positions of cars were observed using a high-resolution laser scanner. Over a series of sessions at various values of density, we found that jammed flow occurred at high densities, whereas free flow was conserved at low densities. We also found indications of metastability at an intermediate density. The critical density is estimated by analyzing the fluctuations in speed and the density–flow relation. The value of this critical density is consistent with that observed on real expressways. This experiment provides strong support for physical interpretations of the emergence of traffic jams as a dynamical phase transition. (paper)

The Solenarc circuit-breaker of high performance level

International Nuclear Information System (INIS)

Lehmann, J.M.

1983-01-01

After recalling the breaking principle involved in MV circuit-breakers manufactured by Merlin Gerin, it is showed how Solenarc technique enables specific problems to be solved that are set by the equipment of Eurodif plant at Tricastin and that represent constraints similar to those encountered with protective equipment for power station auxiliaries (high rated currents, long duration overloads, very high short-circuit currents, current breaks without natural passage through zero, etc.) [fr

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Science.gov (United States)

2010-07-01

...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits extending... which shall be grounded through a suitable resistor at the source transformers, and a grounding circuit...

Inductive energy storage using high voltage vacuum circuit breakers

International Nuclear Information System (INIS)

McCann, R.B.; Woodson, H.H.; Mukutmoni, T.

1976-01-01

Controlled thermonuclear fusion experiments currently being planned require large amounts of pulsed energy. Inductive energy storage systems (IES) appear to be attractive for at least two applications in the fusion research program: high beta devices and those employing turbulent heating. The well-known roadblock to successful implementation of IES is the development of a reliable and cost-effective off-switch capable of handling high currents and withstanding high recovery voltages. The University of Texas at Austin has a program to explore the application of conventional vacuum circuit breakers designed for use in AC systems, in conjunction with appropriate counter pulse circuits, as off-switches in inductive energy storage systems. The present paper describes the IES employing vacuum circuit breakers as off-switches. Since the deionization property of these circuit breakers is of great importance to the design and the cost of the counter-pulse circuit, a synthetic test installation to test these breakers has been conceived, designed and is being installed in the Fusion Research Center, University of Texas at Austin. Some design aspects of the facility will be discussed here. Finally, the results of the study on a mathematical model developed and optimized to determine the least cost system which meets both the requirements of an off-switch for IES Systems and the ratings of circuit breakers used in power systems has been discussed. This analysis indicates that the most important factor with respect to the system cost is the derating of the circuit breakers to obtain satisfactory lifetimes

High-precision high-sensitivity clock recovery circuit for a mobile payment application

International Nuclear Information System (INIS)

Sun Lichong; Yan Na; Min Hao; Ren Wenliang

2011-01-01

This paper presents a fully integrated carrier clock recovery circuit for a mobile payment application. The architecture is based on a sampling-detection module and a charge pump phase locked loop. Compared with clock recovery in conventional 13.56 MHz transponders, this circuit can recover a high-precision consecutive carrier clock from the on/off keying (OOK) signal sent by interrogators. Fabricated by a SMIC 0.18-μm EEPROM CMOS process, this chip works from a single power supply as low as 1.5 V Measurement results show that this circuit provides 0.34% frequency deviation and 8 mV sensitivity. (semiconductor integrated circuits)

Lecture note on circuit technology for high energy physics experiment

International Nuclear Information System (INIS)

Ikeda, Hirokazu.

1992-07-01

This lecture gives basic ideas and practice of the circuit technology for high energy physics experiment. The program of this lecture gives access to the integrated circuit technology to be applied for a high luminosity hadron collider experiment. (author)

CMOS analog integrated circuits high-speed and power-efficient design

CERN Document Server

Ndjountche, Tertulien

2011-01-01

High-speed, power-efficient analog integrated circuits can be used as standalone devices or to interface modern digital signal processors and micro-controllers in various applications, including multimedia, communication, instrumentation, and control systems. New architectures and low device geometry of complementary metaloxidesemiconductor (CMOS) technologies have accelerated the movement toward system on a chip design, which merges analog circuits with digital, and radio-frequency components. CMOS: Analog Integrated Circuits: High-Speed and Power-Efficient Design describes the important tren

Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers.

Science.gov (United States)

Choi, Hojong; Shung, K Kirk

2014-06-12

The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer's sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems.The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers

CHEETAH: circuit-switched high-speed end-to-end transport architecture

Science.gov (United States)

Veeraraghavan, Malathi; Zheng, Xuan; Lee, Hyuk; Gardner, M.; Feng, Wuchun

2003-10-01

Leveraging the dominance of Ethernet in LANs and SONET/SDH in MANs and WANs, we propose a service called CHEETAH (Circuit-switched High-speed End-to-End Transport ArcHitecture). The service concept is to provide end hosts with high-speed, end-to-end circuit connectivity on a call-by-call shared basis, where a "circuit" consists of Ethernet segments at the ends that are mapped into Ethernet-over-SONET long-distance circuits. This paper focuses on the file-transfer application for such circuits. For this application, the CHEETAH service is proposed as an add-on to the primary Internet access service already in place for enterprise hosts. This allows an end host that is sending a file to first attempt setting up an end-to-end Ethernet/EoS circuit, and if rejected, fall back to the TCP/IP path. If the circuit setup is successful, the end host will enjoy a much shorter file-transfer delay than on the TCP/IP path. To determine the conditions under which an end host with access to the CHEETAH service should attempt circuit setup, we analyze mean file-transfer delays as a function of call blocking probability in the circuit-switched network, probability of packet loss in the IP network, round-trip times, link rates, and so on.

High-voltage integrated transmitting circuit with differential driving for CMUTs

DEFF Research Database (Denmark)

Llimos Muntal, Pere; Larsen, Dennis Øland; Færch, Kjartan Ullitz

2016-01-01

In this paper, a high-voltage integrated differential transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is presented. Due to its application, area and power consumption are critical and need to be minimized. The circuitry...... is designed and implemented in AMS 0.35 μ m high-voltage process. Measurements are performed on the fabricated integrated circuit in order to assess its performance. The transmitting circuit consists of a low-voltage control logic, pulse-triggered level shifters and a differential output stage that generates...... conditions is 0.936 mW including the load. The integrated circuits measured prove to be consistent and robust to local process variations by measurements....

Polymer solar cells with enhanced open-circuit voltage and efficiency

Science.gov (United States)

Chen, Hsiang-Yu; Hou, Jianhui; Zhang, Shaoqing; Liang, Yongye; Yang, Guanwen; Yang, Yang; Yu, Luping; Wu, Yue; Li, Gang

2009-11-01

Following the development of the bulk heterojunction structure, recent years have seen a dramatic improvement in the efficiency of polymer solar cells. Maximizing the open-circuit voltage in a low-bandgap polymer is one of the critical factors towards enabling high-efficiency solar cells. Study of the relation between open-circuit voltage and the energy levels of the donor/acceptor in bulk heterojunction polymer solar cells has stimulated interest in modifying the open-circuit voltage by tuning the energy levels of polymers. Here, we show that the open-circuit voltage of polymer solar cells constructed based on the structure of a low-bandgap polymer, PBDTTT, can be tuned, step by step, using different functional groups, to achieve values as high as 0.76 V. This increased open-circuit voltage combined with a high short-circuit current density results in a polymer solar cell with a power conversion efficiency as high as 6.77%, as certified by the National Renewable Energy Laboratory.

High voltage MOSFET switching circuit

Science.gov (United States)

McEwan, Thomas E.

1994-01-01

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

Short-circuit experiments on a high Tc-superconducting cable conductor

DEFF Research Database (Denmark)

Tønnesen, Ole; Jensen, E.H.; Traholt, C.

2002-01-01

A high temperature superconductor (HTS) cable conductor (CC) with a critical current of 2.1 kA was tested over a range of short-circuit currents up to 20 kA. The duration of the short-circuit currents is 1 s. Between each short-circuit test the critical current of the HTS CC was measured in order...

High Power laser power conditioning system new discharge circuit research

CERN Document Server

Li Yi; Peng Han Sheng; Zhou Pei Zhang; Zheng Wan Guo; Guo Lang Fu; Chen Li Hua; Chen De Hui; Lai Gui You; Luan Yong Ping

2002-01-01

The new discharge circuit of power conditioning system for high power laser is studied. The theoretical model of the main discharge circuit is established. The pre-ionization circuit is studied in experiment. In addition, the explosion energy of the new large xenon lamp is successfully measured. The conclusion has been applied to 4 x 2 amplifier system

Parameter space of experimental chaotic circuits with high-precision control parameters

Energy Technology Data Exchange (ETDEWEB)

Sousa, Francisco F. G. de; Rubinger, Rero M. [Instituto de Física e Química, Universidade Federal de Itajubá, Itajubá, MG (Brazil); Sartorelli, José C., E-mail: sartorelli@if.usp.br [Universidade de São Paulo, São Paulo, SP (Brazil); Albuquerque, Holokx A. [Departamento de Física, Universidade do Estado de Santa Catarina, Joinville, SC (Brazil); Baptista, Murilo S. [Institute of Complex Systems and Mathematical Biology, SUPA, University of Aberdeen, Aberdeen (United Kingdom)

2016-08-15

We report high-resolution measurements that experimentally confirm a spiral cascade structure and a scaling relationship of shrimps in the Chua's circuit. Circuits constructed using this component allow for a comprehensive characterization of the circuit behaviors through high resolution parameter spaces. To illustrate the power of our technological development for the creation and the study of chaotic circuits, we constructed a Chua circuit and study its high resolution parameter space. The reliability and stability of the designed component allowed us to obtain data for long periods of time (∼21 weeks), a data set from which an accurate estimation of Lyapunov exponents for the circuit characterization was possible. Moreover, this data, rigorously characterized by the Lyapunov exponents, allows us to reassure experimentally that the shrimps, stable islands embedded in a domain of chaos in the parameter spaces, can be observed in the laboratory. Finally, we confirm that their sizes decay exponentially with the period of the attractor, a result expected to be found in maps of the quadratic family.

High-voltage direct-current circuit breakers

International Nuclear Information System (INIS)

Yoshioka, Y.; Hirasawa, K.

1991-01-01

This paper reports that in 1954 the first high-voltage direct-current (HVDC) transmission system was put into operation between Gotland and the mainland of Sweden. Its system voltage and capacity were 100 kV and 20 MW, respectively. Since then many HVDC transmission systems have been planned, constructed, or commissioned in more than 30 places worldwide, and their total capacity is close to 40 GW. Most systems commissioned to date are two-terminal schemes, and HVDC breakers are not yet used in the high-potential main circuit of those systems, because the system is expected to perform well using only converter/inverter control even at a fault stage of the transmission line. However, even in a two-terminal scheme there are not a few merits in using an HVDC breaker when the system has two parallel transmission lines, that is, when it is a double-circuit system

Electrical design of a high current density air-core reversed-field pinch ''ZTP''

International Nuclear Information System (INIS)

Reass, W.A.; Cribble, R.F.; Melton, J.G.

1983-01-01

This paper describes the electrical design of a small, high current density (10 MA/m 2 ) toroidal reversed-field Z-Pinch (RFP) presently being constructed at Los Alamos. Special purpose magnetic field programs were used to calculate self and mutual inductances for the poloidal field windings. The network analysis program MINI-SCEPTRE was then used to predict plasma current, including the interaction between toroidal and poloidal field circuits, as described by the Bessel function model for RFP's. Using these programs, coil geometry was obtained for minimal field errors and the pulse power systems were optimized to minimize equilibrium control power. Results of computer modeling and implementation of the electrical circuits are presented

Electrical design of a high current density air-core reversed-field pinch ZTP

International Nuclear Information System (INIS)

Reass, W.A.; Melton, J.G.; Gribble, R.F.

1983-01-01

This paper describes the electrical design of a small, high current density (10 MA/m 2 ) toroidal reversed-field Z-Pinch (RFP) presently being constructed at Los Alamos. Special purpose magnetic field programs were used to calculate self and mutual inductances for the poloidal field windings. The network analysis program MINI-SCEPTRE was then used to predict plasma current, including the interaction between toroidal and poloidal field circuits, as described by the Bessel function model for RFP's. Using these programs, coil geometry was obtained for minimal field errors and the pulse power systems were optimized to minimize equilibrium control power. Results of computer modeling and implementation of the electrical circuits are presented

Cooling of high-density and power electronics by means of heat pipes

International Nuclear Information System (INIS)

Hubbeling, L.

1980-06-01

This report describes how heat pipes can be used for cooling modern electronic equipment, with numerous advantages over air-cooled systems. A brief review of heat-pipe properties is given, with a detailed description of a functioning prototype. This is a single-width CAMAC unit containing high-density electronic circuits cooled by three heat pipes, and allowing a dissipation of over 120 W instead of the normal maximum of 20 W. (orig.)

Effects of smoke on functional circuits

International Nuclear Information System (INIS)

Tanaka, T.J.

1997-10-01

Nuclear power plants are converting to digital instrumentation and control systems; however, the effects of abnormal environments such as fire and smoke on such systems are not known. There are no standard tests for smoke, but previous smoke exposure tests at Sandia National Laboratories have shown that digital communications can be temporarily interrupted during a smoke exposure. Another concern is the long-term corrosion of metals exposed to the acidic gases produced by a cable fire. This report documents measurements of basic functional circuits during and up to 1 day after exposure to smoke created by burning cable insulation. Printed wiring boards were exposed to the smoke in an enclosed chamber for 1 hour. For high-resistance circuits, the smoke lowered the resistance of the surface of the board and caused the circuits to short during the exposure. These circuits recovered after the smoke was vented. For low-resistance circuits, the smoke caused their resistance to increase slightly. A polyurethane conformal coating substantially reduced the effects of smoke. A high-speed digital circuit was unaffected. A second experiment on different logic chip technologies showed that the critical shunt resistance that would cause failure was dependent on the chip technology and that the components used in the smoke exposures were some of the most smoke tolerant. The smoke densities in these tests were high enough to cause changes in high impedance (resistance) circuits during exposure, but did not affect most of the other circuits. Conformal coatings and the characteristics of chip technologies should be considered when designing circuitry for nuclear power plant safety systems, which must be highly reliable under a variety of operating and accident conditions. 10 refs., 34 figs., 18 tabs

Driver Circuit For High-Power MOSFET's

Science.gov (United States)

Letzer, Kevin A.

1991-01-01

Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

A new high-voltage level-shifting circuit for half-bridge power ICs

International Nuclear Information System (INIS)

Kong Moufu; Chen Xingbi

2013-01-01

In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed. The integrated low-voltage power supply not only provides energy for the level-shifting circuit and the logic circuit, but also provides voltage signals for the gates and sources of the PMOS active resistors to ensure that they are normally-on. The normally-on PMOS transistors do not, therefore, need to be fabricated in the depletion process. The current mirror ensures that the level-shifting circuit has a constant current, which can reduce the process error of the high-voltage devices of the circuit. Moreover, an improved RS trigger is also proposed to improve the reliability of the circuit. The proposed level-shifting circuit is analyzed and confirmed by simulation with MEDICI, and the simulation results show that the function is achieved well. (semiconductor integrated circuits)

A High-Voltage Level Tolerant Transistor Circuit

NARCIS (Netherlands)

Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

2001-01-01

A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

High performance of PbSe/PbS core/shell quantum dot heterojunction solar cells: short circuit current enhancement without the loss of open circuit voltage by shell thickness control.

Science.gov (United States)

Choi, Hyekyoung; Song, Jung Hoon; Jang, Jihoon; Mai, Xuan Dung; Kim, Sungwoo; Jeong, Sohee

2015-11-07

We fabricated heterojunction solar cells with PbSe/PbS core shell quantum dots and studied the precisely controlled PbS shell thickness dependency in terms of optical properties, electronic structure, and solar cell performances. When the PbS shell thickness increases, the short circuit current density (JSC) increases from 6.4 to 11.8 mA cm(-2) and the fill factor (FF) enhances from 30 to 49% while the open circuit voltage (VOC) remains unchanged at 0.46 V even with the decreased effective band gap. We found that the Fermi level and the valence band maximum level remain unchanged in both the PbSe core and PbSe/PbS core/shell with a less than 1 nm thick PbS shell as probed via ultraviolet photoelectron spectroscopy (UPS). The PbS shell reduces their surface trap density as confirmed by relative quantum yield measurements. Consequently, PbS shell formation on the PbSe core mitigates the trade-off relationship between the open circuit voltage and the short circuit current density. Finally, under the optimized conditions, the PbSe core with a 0.9 nm thick shell yielded a power conversion efficiency of 6.5% under AM 1.5.

A high speed, wide dynamic range digitizer circuit for photomultiplier tubes

Energy Technology Data Exchange (ETDEWEB)

Yarema, R.J.; Foster, G.W.; Knickerbocker, K.; Sarraj, M.; Tschirhart, R.; Whitmore, J.; Zimmerman, T. [Fermi National Accelerator Lab., Batavia, IL (United States); Lindgren, M. [Univ. of California, Los Angeles, CA (United States). Physics Dept.

1994-06-01

High energy physics experiments running at high interaction rates frequently require long record lengths for determining a level 1 trigger. The easiest way to provide a long event record is by digital means. In applications requiring wide dynamic range, however, digitization of an analog signal to obtain the digital record has been impossible due to lack of high speed, wide range FADCs. One such application is the readout of thousands of photomultiplier tubes in fixed target and colliding beam experiment calorimeters. A circuit has been designed for digitizing PMT signals over a wide dynamic range (17--18 bits) with 8 bits of resolution at rates up to 53 MHz. Output from the circuit is in a floating point format with a 4 bit exponent and an 8 bit mantissa. The heart of the circuit is a full custom integrated circuit called the QIE (Charge Integrator and Encoder). The design of the QIE and associated circuitry reported here permits operation over a 17 bit dynamic range. Tests of the circuit with a PMT input and a pulsed laser have provided respectable results with little off line correction. Performance of the circuit for demanding applications can be significantly enhanced with additional off line correction. Circuit design, packaging issues, and test results of a multirange device are presented for the first time.

A high speed, wide dynamic range digitizer circuit for photomultiplier tubes

International Nuclear Information System (INIS)

Yarema, R.J.; Foster, G.W.; Knickerbocker, K.; Sarraj, M.; Tschirhart, R.; Whitmore, J.; Zimmerman, T.; Lindgren, M.

1994-06-01

High energy physics experiments running at high interaction rates frequently require long record lengths for determining a level 1 trigger. The easiest way to provide a long event record is by digital means. In applications requiring wide dynamic range, however, digitization of an analog signal to obtain the digital record has been impossible due to lack of high speed, wide range FADCs. One such application is the readout of thousands of photomultiplier tubes in fixed target and colliding beam experiment calorimeters. A circuit has been designed for digitizing PMT signals over a wide dynamic range (17--18 bits) with 8 bits of resolution at rates up to 53 MHz. Output from the circuit is in a floating point format with a 4 bit exponent and an 8 bit mantissa. The heart of the circuit is a full custom integrated circuit called the QIE (Charge Integrator and Encoder). The design of the QIE and associated circuitry reported here permits operation over a 17 bit dynamic range. Tests of the circuit with a PMT input and a pulsed laser have provided respectable results with little off line correction. Performance of the circuit for demanding applications can be significantly enhanced with additional off line correction. Circuit design, packaging issues, and test results of a multirange device are presented for the first time

A high open-circuit voltage gallium nitride betavoltaic microbattery

International Nuclear Information System (INIS)

Cheng, Zaijun; Chen, Xuyuan; San, Haisheng; Feng, Zhihong; Liu, Bo

2012-01-01

A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p–i–n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63 Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 × 2 mm 2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63 Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery. (paper)

Mobile Learning Based Worked Example in Electric Circuit (WEIEC) Application to Improve the High School Students' Electric Circuits Interpretation Ability

Science.gov (United States)

Yadiannur, Mitra; Supahar

2017-01-01

This research aims to determine the feasibility and effectivity of mobile learning based Worked Example in Electric Circuits (WEIEC) application in improving the high school students' electric circuits interpretation ability on Direct Current Circuits materials. The research method used was a combination of Four-D Models and ADDIE model. The…

Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit

Science.gov (United States)

Shinki, Yuharu; Shibata, Kyohei; Mansour, Mohamed

2017-01-01

This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC) voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for −4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz. PMID:28763043

Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit

Directory of Open Access Journals (Sweden)

Yuharu Shinki

2017-08-01

Full Text Available This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for −4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz.

Impedance Matching Antenna-Integrated High-Efficiency Energy Harvesting Circuit.

Science.gov (United States)

Shinki, Yuharu; Shibata, Kyohei; Mansour, Mohamed; Kanaya, Haruichi

2017-08-01

This paper describes the design of a high-efficiency energy harvesting circuit with an integrated antenna. The circuit is composed of series resonance and boost rectifier circuits for converting radio frequency power into boosted direct current (DC) voltage. The measured output DC voltage is 5.67 V for an input of 100 mV at 900 MHz. Antenna input impedance matching is optimized for greater efficiency and miniaturization. The measured efficiency of this antenna-integrated energy harvester is 60% for -4.85 dBm input power and a load resistance equal to 20 kΩ at 905 MHz.

Flexible, High-Speed CdSe Nanocrystal Integrated Circuits.

Science.gov (United States)

Stinner, F Scott; Lai, Yuming; Straus, Daniel B; Diroll, Benjamin T; Kim, David K; Murray, Christopher B; Kagan, Cherie R

2015-10-14

We report large-area, flexible, high-speed analog and digital colloidal CdSe nanocrystal integrated circuits operating at low voltages. Using photolithography and a newly developed process to fabricate vertical interconnect access holes, we scale down device dimensions, reducing parasitic capacitances and increasing the frequency of circuit operation, and scale up device fabrication over 4 in. flexible substrates. We demonstrate amplifiers with ∼7 kHz bandwidth, ring oscillators with <10 μs stage delays, and NAND and NOR logic gates.

High school physics teacher forms of thought about simple electric circuits

International Nuclear Information System (INIS)

Kucukozer, H.

2005-01-01

According to some researches on students and on science teachers, they have same conceptual difficulties about simple electric circuits and these affect their further learning or/and teaching. [2], [5], [8], [9], [11], [13]. The main aim of this study was to investigate in-service high school physics teachers form of thought about simple electric circuits. In this purpose a test that was developed by Kucukozer [7], contains eight questions related to simple electric circuits was applied to in-service physics teachers (25 subjects) in various Anatolian Teacher High School in Turkey. After analyzing and evaluating of their data, it was found that, the physics teachers have conceptual difficulties about simple electric circuits, especially the concepts about source of stationary current and current usage

Elements configuration of the open lead test circuit

International Nuclear Information System (INIS)

Fukuzaki, Yumi; Ono, Akira

2016-01-01

In the field of electronics, small electronic devices are widely utilized because they are easy to carry. The devices have various functions by user’s request. Therefore, the lead’s pitch or the ball’s pitch have been narrowed and high-density printed circuit board has been used in the devices. Use of the ICs which have narrow lead pitch makes normal connection difficult. When logic circuits in the devices are fabricated with the state-of-the-art technology, some faults have occurred more frequently. It can be divided into types of open faults and short faults. We have proposed a new test method using a test circuit in the past. This paper propose elements configuration of the test circuit.

Elements configuration of the open lead test circuit

Energy Technology Data Exchange (ETDEWEB)

Fukuzaki, Yumi, E-mail: 14514@sr.kagawa-nct.ac.jp [Advanced course of Electronics, Information and Communication Engineering, National Institute of Technology, Kagawa College, 551 Koda, Mitoyo, Kagawa (Japan); Ono, Akira [Department of Communication Network Engineering, National Institute of Technology, Kagawa College, 551 Koda, Mitoyo, Kagawa (Japan)

2016-07-06

In the field of electronics, small electronic devices are widely utilized because they are easy to carry. The devices have various functions by user’s request. Therefore, the lead’s pitch or the ball’s pitch have been narrowed and high-density printed circuit board has been used in the devices. Use of the ICs which have narrow lead pitch makes normal connection difficult. When logic circuits in the devices are fabricated with the state-of-the-art technology, some faults have occurred more frequently. It can be divided into types of open faults and short faults. We have proposed a new test method using a test circuit in the past. This paper propose elements configuration of the test circuit.

An optoelectronic integrated device including a laser and its driving circuit

Energy Technology Data Exchange (ETDEWEB)

Matsueda, H.; Nakano, H.; Tanaka, T.P.

1984-10-01

A monolithic optoelectronic integrated circuit (OEIC) including a laser diode, photomonitor and driving and detecting circuits has been fabricated on a semi-insulating GaAs substrate. The OEIC has a horizontal integrating structure which is suitable for realising high-density multifunctional devices. The fabricating process and the static and dynamic characteristics of the optical and electronic elements are described. The preliminary results of the co-operative operation of the laser and its driving circuit are also presented.

Origin of Reduced Open-Circuit Voltage in Highly Efficient Small-Molecule-Based Solar Cells upon Solvent Vapor Annealing.

Science.gov (United States)

Deng, Wanyuan; Gao, Ke; Yan, Jun; Liang, Quanbin; Xie, Yuan; He, Zhicai; Wu, Hongbin; Peng, Xiaobin; Cao, Yong

2018-03-07

In this study, we demonstrate that remarkably reduced open-circuit voltage in highly efficient organic solar cells (OSCs) from a blend of phenyl-C 61 -butyric acid methyl ester and a recently developed conjugated small molecule (DPPEZnP-THD) upon solvent vapor annealing (SVA) is due to two independent sources: increased radiative recombination and increased nonradiative recombination. Through the measurements of electroluminescence due to the emission of the charge-transfer state and photovoltaic external quantum efficiency measurement, we can quantify that the open-circuit voltage losses in a device with SVA due to the radiative recombination and nonradiative recombination are 0.23 and 0.31 V, respectively, which are 0.04 and 0.07 V higher than those of the as-cast device. Despite of the reduced open-circuit voltage, the device with SVA exhibited enhanced dissociation of charge-transfer excitons, leading to an improved short-circuit current density and a remarkable power conversion efficiency (PCE) of 9.41%, one of the best for solution-processed OSCs based on small-molecule donor materials. Our study also clearly shows that removing the nonradiative recombination pathways and/or suppressing energetic disorder in the active layer would result in more long-lived charge carriers and enhanced open-circuit voltage, which are prerequisites for further improving the PCE.

Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits.

Science.gov (United States)

Liu, Yuanda; Ang, Kah-Wee

2017-07-25

Two-dimensional (2D) inverters are a fundamental building block for flexible logic circuits which have previously been realized by heterogeneously wiring transistors with two discrete channel materials. Here, we demonstrate a monolithically integrated complementary inverter made using a homogeneous black phosphorus (BP) nanosheet on flexible substrates. The digital logic inverter circuit is demonstrated via effective threshold voltage tuning within a single BP material, which offers both electron and hole dominated conducting channels with nearly symmetric pinch-off and current saturation. Controllable electron concentration is achieved by accurately modulating the aluminum (Al) donor doping, which realizes BP n-FET with a room-temperature on/off ratio >10 3 . Simultaneously, work function engineering is employed to obtain a low Schottky barrier contact electrode that facilities hole injection, thus enhancing the current density of the BP p-FET by 9.4 times. The flexible inverter circuit shows a clear digital logic voltage inversion operation along with a larger-than-unity direct current voltage gain, while exhibits alternating current dynamic signal switching at a record high frequency up to 100 kHz and remarkable electrical stability upon mechanical bending with a radii as small as 4 mm. Our study demonstrates a practical monolithic integration strategy for achieving functional logic circuits on one material platform, paving the way for future high-density flexible electronic applications.

Novel circuits for radiation hardened memories

International Nuclear Information System (INIS)

Haraszti, T.P.; Mento, R.P.; Moyer, N.E.; Grant, W.M.

1992-01-01

This paper reports on implementation of large storage semiconductor memories which combine radiation hardness with high packing density, operational speed, and low power dissipation and require both hardened circuit and hardened process technologies. Novel circuits, including orthogonal shuffle type of write-read arrays, error correction by weighted bidirectional codes and associative iterative repair circuits, are proposed for significant improvements of SRAMs' immunity against the effects of total dose and cosmic particle impacts. The implementation of the proposed circuit resulted in fault-tolerant 40-Mbit and 10-Mbit monolithic memories featuring a data rate of 120 MHz and power dissipation of 880 mW. These experimental serial-parallel memories were fabricated with a nonhardened standard CMOS processing technology, yet provided a total dose hardness of 1 Mrad and a projected SEU rate of 1 x 10 - 12 error/bit/day. Using radiation hardened processing improvements by factors of 10 to 100 are predicted in both total dose hardness and SEU rate

Infant-mortality testing of high-energy-density capacitors used on Nova

International Nuclear Information System (INIS)

Merritt, B.T.; Whitham, K.

1983-01-01

Nova is a solid-state large laser for inertial-confinement fusion research. Its flashlamps are driven by a 60-MJ capacitor bank. Part of this bank is being built with high-energy-density capacitors, 52-μF, 22 kV, 12.5 kJ. A total of 2645 of these capacitors have been purchased from two manufacturers. Each capacitor was infant-mortality tested. The first test consisted of a high-potential test, bushing-to-case, since these capacitors have dual bushings. Then the capacitors were discharged 500 times with circuit conditions approximating the capacitors normal flashlamp load. Failure of either of these tests or if the capacitor was leaking was cause for rejection

High performance integer arithmetic circuit design on FPGA architecture, implementation and design automation

CERN Document Server

Palchaudhuri, Ayan

2016-01-01

This book describes the optimized implementations of several arithmetic datapath, controlpath and pseudorandom sequence generator circuits for realization of high performance arithmetic circuits targeted towards a specific family of the high-end Field Programmable Gate Arrays (FPGAs). It explores regular, modular, cascadable, and bit-sliced architectures of these circuits, by directly instantiating the target FPGA-specific primitives in the HDL. Every proposed architecture is justified with detailed mathematical analyses. Simultaneously, constrained placement of the circuit building blocks is performed, by placing the logically related hardware primitives in close proximity to one another by supplying relevant placement constraints in the Xilinx proprietary “User Constraints File”. The book covers the implementation of a GUI-based CAD tool named FlexiCore integrated with the Xilinx Integrated Software Environment (ISE) for design automation of platform-specific high-performance arithmetic circuits from us...

High efficiency inverter and ballast circuits

International Nuclear Information System (INIS)

Nilssen, O.K.

1984-01-01

A high efficiency push-pull inverter circuit employing a pair of relatively high power switching transistors is described. The switching on and off of the transistors is precisely controlled to minimize power losses due to common-mode conduction or due to transient conditions that occur in the process of turning a transistor on or off. Two current feed-back transformers are employed in the transistor base drives; one being saturable for providing a positive feedback, and the other being non-saturable for providing a subtractive feedback

Memristor Circuits and Systems

KAUST Repository

Zidan, Mohammed A.

2015-05-01

Current CMOS-based technologies are facing design challenges related to the continuous scaling down of the minimum feature size, according to Moore’s law. Moreover, conventional computing architecture is no longer an effective way of fulfilling modern applications demands, such as big data analysis, pattern recognition, and vector processing. Therefore, there is an exigent need to shift to new technologies, at both the architecture and the device levels. Recently, memristor devices and structures attracted attention for being promising candidates for this job. Memristor device adds a new dimension for designing novel circuits and systems. In addition, high-density memristor-based crossbar is widely considered to be the essential element for future memory and bio-inspired computing systems. However, numerous challenges need to be addressed before the memristor genuinely replaces current memory and computing technologies, which is the motivation behind this research effort. In order to address the technology challenges, we begin by fabricating and modeling the memristor device. The devices fabricated at our local clean room enriched our understanding of the memristive phenomenon and enabled the experimental testing for our memristor-based circuits. Moreover, our proposed mathematical modeling for memristor behavior is an essential element for the theoretical circuit design stage. Designing and addressing the challenges of memristor systems with practical complexity, however, requires an extra step, which takes the form of a reliable and modular simulation platform. We, therefore, built a new simulation platform for the resistive crossbar, which can simulate realistic size arrays filled with real memory data. In addition, this simulation platform includes various crossbar nonidealities in order to obtain accurate simulation results. Consequently, we were able to address the significant challenges facing the high density memristor crossbar, as the building block for

A High Step-Down Interleaved Buck Converter with Active-Clamp Circuits for Wind Turbines

Directory of Open Access Journals (Sweden)

Chih-Lung Shen

2012-12-01

Full Text Available In this paper, a high step-down interleaved buck coupled-inductor converter (IBCC with active-clamp circuits for wind energy conversion has been studied. In high step-down voltage applications, an IBCC can extend duty ratio and reduce voltage stresses on active switches. In order to reduce switching losses of active switches to improve conversion efficiency, a IBCC with soft-switching techniques is usually required. Compared with passive-clamp circuits, the IBCC with active-clamp circuits have lower switching losses and minimum ringing voltage of the active switches. Thus, the proposed IBCC with active-clamp circuits for wind energy conversion can significantly increase conversion efficiency. Finally, a 240 W prototype of the proposed IBCC with active-clamp circuits was built and implemented. Experimental results have shown that efficiency can reach as high as 91%. The proposed IBCC with active-clamp circuits is presented in high step-down voltage applications to verify the performance and the feasibility for energy conversion of wind turbines.

Ultrafine coal classification using 150 mm gMax cyclone circuits

Energy Technology Data Exchange (ETDEWEB)

Honaker, R.Q.; Boaten, F.; Luttrell, G.H. [University of Kentucky, Lexington, KY (United States). Dept. of Mineral Engineering

2007-11-15

A two-stage classification circuit using 150 mm diameter gMax cyclones was installed and evaluated in a coal preparation plant in an effort to achieve a clean coal product without the use of froth flotation. Particle size separations of around 37 {mu}m were achieved while limiting ultrafine bypass to less than 10% in the circuit underflow stream. As a result, approximately 81% of the ash-bearing material in the circuit feed was rejected to the circuit overflow stream. The feed ash content was reduced from around 50% to values in the range of 22-30% in the circuit underflow stream with a mass recovery of about 30%. Further reductions in the coarse product ash content were limited due to the particle density effect and the remaining presence of a significant quantity of high-ash slime material in the coarse product. The typical D{sub 50} for the coal particles was 40 {mu} m while the estimated value for mineral matter was 17 {mu} m. Based on the findings of the study, the use of classification to recover a low-ash, coarse fraction in the feed of a fine coal circuit is limited by the density effect regardless of the ability to eliminate ultrafine bypass.

Multi-channel logical circuit module used for high-speed, low amplitude signals processing and QDC gate signals generation

International Nuclear Information System (INIS)

Su Hong; Li Xiaogang; Zhu Haidong; Ma Xiaoli; Yin Weiwei; Li Zhuyu; Jin Genming; Wu Heyu

2001-01-01

A new kind of logical circuit will be introduced in brief. There are 16 independent channels in the module. The module receives low amplitude signals(≥40 mV), and processes them to amplify, shape, delay, sum and etc. After the processing each channel produces 2 pairs of ECL logical signal to feed the gate of QDC as the gate signal of QDC. The module consists of high-speed preamplifier unit, high-speed discriminate unit, delaying and shaping unit, summing unit and trigger display unit. The module is developed for 64 CH. 12 BIT Multi-event QDC. The impedance of QDC is 110 Ω. Each gate signal of QDC requires a pair of differential ECL level, Min. Gate width 30 ns and Max. Gate width 1 μs. It has showed that the outputs of logical circuit module satisfy the QDC requirements in experiment. The module can be used on data acquisition system to acquire thousands of data at high-speed ,high-density and multi-parameter, in heavy particle nuclear physics experiment. It also can be used to discriminate multi-coincidence events

High-Power-Density, High-Energy-Density Fluorinated Graphene for Primary Lithium Batteries

Directory of Open Access Journals (Sweden)

Guiming Zhong

2018-03-01

Full Text Available Li/CFx is one of the highest-energy-density primary batteries; however, poor rate capability hinders its practical applications in high-power devices. Here we report a preparation of fluorinated graphene (GFx with superior performance through a direct gas fluorination method. We find that the so-called “semi-ionic” C-F bond content in all C-F bonds presents a more critical impact on rate performance of the GFx in comparison with sp2 C content in the GFx, morphology, structure, and specific surface area of the materials. The rate capability remains excellent before the semi-ionic C-F bond proportion in the GFx decreases. Thus, by optimizing semi-ionic C-F content in our GFx, we obtain the optimal x of 0.8, with which the GF0.8 exhibits a very high energy density of 1,073 Wh kg−1 and an excellent power density of 21,460 W kg−1 at a high current density of 10 A g−1. More importantly, our approach opens a new avenue to obtain fluorinated carbon with high energy densities without compromising high power densities.

The open-circuit voltage in microcrystalline silicon solar cells of different degrees of crystallinity

International Nuclear Information System (INIS)

Nath, Madhumita; Roca i Cabarrocas, P.; Johnson, E.V.; Abramov, A.; Chatterjee, P.

2008-01-01

We have used a detailed electrical-optical computer model (ASDMP) in conjunction with the experimental characterization of microcrystalline silicon thin-film solar cells of different degrees of crystallinity (but having identical P- and N-layers) to understand the observed decrease of the open-circuit voltage with increasing crystalline fraction. In order to model all aspects of the experimental current density-voltage and quantum efficiency characteristics of cells having low (∼ 75%) and high (over 90%) crystalline fraction, we had to assume both a higher mobility gap defect density and a lower band gap for the more crystallized material. The former fact is widely known to bring down the open-circuit voltage. Our calculations also reveal that the proximity of the quasi-Fermi levels to the energy bands in the cell based on highly crystallized (and assumed to have a lower band gap) microcrystalline silicon results in higher free and trapped carrier densities in this device. The trapped hole population is particularly high at and close to the P/I interface on account of the higher inherent defect density in this region and the fact that the hole quasi-Fermi level is close to the valence band edge here. This fact results in a strong interface field, a collapse of the field in the volume, and hence a lower open-circuit voltage. Thus a combination of higher mobility gap defects and a lower band gap is probably the reason for the lower open-circuit voltage in cells based on highly crystallized microcrystalline silicon

Custom high-reliability radiation-hard CMOS-LSI circuit design

International Nuclear Information System (INIS)

Barnard, W.J.

1981-01-01

Sandia has developed a custom CMOS-LSI design capability to provide high reliability radiation-hardened circuits. This capability relies on (1) proven design practices to enhance reliability, (2) use of well characterized cells and logic modules, (3) computer-aided design tools to reduce design time and errors and to standardize design definition, and (4) close working relationships with the system designer and technology fabrication personnel. Trade-offs are made during the design between circuit complexity/performance and technology/producibility for high reliability and radiation-hardened designs to result. Sandia has developed and is maintaining a radiation-hardened bulk CMOS technology fabrication line for production of prototype and small production volume parts

High-frequency and microwave circuit design

CERN Document Server

Nelson, Charles

2007-01-01

An integral part of any communications system, high-frequency and microwave design stimulates major progress in the wireless world and continues to serve as a foundation for the commercial wireless products we use every day. The exceptional pace of advancement in developing these systems stipulates that engineers be well versed in multiple areas of electronics engineering. With more illustrations, examples, and worked problems, High-Frequency and Microwave Circuit Design, Second Edition provides engineers with a diverse body of knowledge they can use to meet the needs of this rapidly progressi

Analysis and Design Considerations of a High-Power Density, Dual Air Gap, Axial-Field Brushless, Permanent Magnet Motor.

Science.gov (United States)

Cho, Chahee Peter

1995-01-01

Until recently, brush dc motors have been the dominant drive system because they provide easily controlled motor speed over a wide range, rapid acceleration and deceleration, convenient control of position, and lower product cost. Despite these capabilities, the brush dc motor configuration does not satisfy the design requirements for the U.S. Navy's underwater propulsion applications. Technical advances in rare-earth permanent magnet materials, in high-power semiconductor transistor technology, and in various rotor position-sensing devices have made using brushless permanent magnet motors a viable alternative. This research investigates brushless permanent magnet motor technology, studying the merits of dual-air gap, axial -field, brushless, permanent magnet motor configuration in terms of power density, efficiency, and noise/vibration levels. Because the design objectives for underwater motor applications include high-power density, high-performance, and low-noise/vibration, the traditional, simplified equivalent circuit analysis methods to assist in meeting these goals were inadequate. This study presents the development and verification of detailed finite element analysis (FEA) models and lumped parameter circuit models that can calculate back electromotive force waveforms, inductance, cogging torque, energized torque, and eddy current power losses. It is the first thorough quantification of dual air-gap, axial -field, brushless, permanent magnet motor parameters and performance characteristics. The new methodology introduced in this research not only facilitates the design process of an axial field, brushless, permanent magnet motor but reinforces the idea that the high-power density, high-efficiency, and low-noise/vibration motor is attainable.

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

Directory of Open Access Journals (Sweden)

Zong Yao

2016-06-01

Full Text Available This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts, the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

A high frequency test bench for rapid single-flux-quantum circuits

International Nuclear Information System (INIS)

Engseth, H; Intiso, S; Rafique, M R; Tolkacheva, E; Kidiyarova-Shevchenko, A

2006-01-01

We have designed and experimentally verified a test bench for high frequency testing of rapid single-flux-quantum (RSFQ) circuits. This test bench uses an external tunable clock signal that is stable in amplitude, phase and frequency. The high frequency external clock reads out the clock pattern stored in a long shift register. The clock pattern is consequently shifted out at high speed and split to feed both the circuit under test and an additional shift register in the test bench for later verification at low speed. This method can be employed for reliable high speed verification of RSFQ circuit operation, with use of only low speed read-out electronics. The test bench consists of 158 Josephson junctions and the occupied area is 3300 x 660 μm 2 . It was experimentally verified up to 33 GHz with ± 21.7% margins on the global bias supply current

Application specific integrated circuit for high temperature oil well applications

Energy Technology Data Exchange (ETDEWEB)

Fallet, T.; Gakkestad, J.; Forre, G.

1994-12-31

This paper describes the design of an integrated BiCMOS circuit for high temperature applications. The circuit contains Pierce oscillators with automatic gain control, and measurements show that it is operating up to 266{sup o}C. The relative frequency variation up to 200 {sup o}C is less than 60 ppm caused mainly by the crystal element itself. 4 refs., 7 figs.

The primary circuit of the dragon high temperature reactor experiment

International Nuclear Information System (INIS)

Simon, R.

2005-01-01

The 20 MWth Dragon Reactor Experiment was the first HTGR (High Temperature Gas-cooled Reactor) with coated particle fuel. Its purpose was to test fuel and materials for the High Temperature Reactor programmes pursued in Europe 40 years ago. This paper describes the design and construction of the primary (helium) circuit. It summarizes the main design objectives, lists the performance data and explains the flow paths of the heat removal and helium purification systems. The principal circuit accidents postulated are discussed and the choice of the main construction materials is given. (author)

In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers.

Science.gov (United States)

Cochems, P; Kirk, A; Zimmermann, S

2014-12-01

Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design.

Refractory silicides for integrated circuits

International Nuclear Information System (INIS)

Murarka, S.P.

1980-01-01

Transition metal silicides have, in the past, attracted attention because of their usefulness as high temperature materials and in integrated circuits as Schottky barrier and ohmic contacts. More recently, with the increasing silicon integrated circuits (SIC) packing density, the line widths get narrower and the sheet resistance contribution to the RC delay increases. The possibility of using low resistivity silicides, which can be formed directly on the polysilicon, makes these silicides highly attractive. The usefulness of a silicide metallization scheme for integrated circuits depends, not only on the desired low resistivity, but also on the ease with which the silicide can be formed and patterned and on the stability of the silicides throughout device processing and during actual device usage. In this paper, various properties and the formation techniques of the silicides have been reviewed. Correlations between the various properties and the metal or silicide electronic or crystallographic structure have been made to predict the more useful silicides for SIC applications. Special reference to the silicide resistivity, stress, and oxidizability during the formation and subsequent processing has been given. Various formation and etching techniques are discussed

Commutation circuit for an HVDC circuit breaker

Science.gov (United States)

Premerlani, William J.

1981-01-01

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

Noise distribution of a peak track and hold circuit

International Nuclear Information System (INIS)

Seller, Paul; Hardie, Alec L.; Morrissey, Quentin

2012-01-01

Noise in linear electronic circuits is well characterised in terms of power spectral density in the frequency domain and the Normal probability density function in the time domain. For instance a charge preamplifier followed by a simple time independent pulse shaping circuit produces an output with a predictable, easily calculated Normal density function. By the Ergodic Principle this is true if the signal is sampled randomly in time or the experiment is run many times and measured at a fixed time after the circuit is released from reset. Apart from well defined cases, the time of the sample after release of reset does not affect the density function. If this signal is then passed through a peak track-and-hold circuit the situation is very different. The probability density function of the sampled signal is no longer Normal and the function changes with the time of the sample after release of reset. This density function can be classified by the Gumbel probability density function which characterises the Extreme Value Distribution of a defined number of Normally distributed values. The number of peaks in the signal is an important factor in the analysis. This issue is analysed theoretically and compared with a time domain noise simulation programme. This is then related to a real electronic circuit used for low-noise X-ray measurements and shows how the low-energy resolution of this system is significantly degraded when using a peak track-and-hold.

A single lithium-ion battery protection circuit with high reliability and low power consumption

International Nuclear Information System (INIS)

Jiang Jinguang; Li Sen

2014-01-01

A single lithium-ion battery protection circuit with high reliability and low power consumption is proposed. The protection circuit has high reliability because the voltage and current of the battery are controlled in a safe range. The protection circuit can immediately activate a protective function when the voltage and current of the battery are beyond the safe range. In order to reduce the circuit's power consumption, a sleep state control circuit is developed. Additionally, the output frequency of the ring oscillation can be adjusted continuously and precisely by the charging capacitors and the constant-current source. The proposed protection circuit is fabricated in a 0.5 μm mixed-signal CMOS process. The measured reference voltage is 1.19 V, the overvoltage is 4.2 V and the undervoltage is 2.2 V. The total power is about 9 μW. (semiconductor integrated circuits)

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

Science.gov (United States)

Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

2015-12-18

The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

Analysis and design of a charge pump circuit for high output current applications

NARCIS (Netherlands)

van Steenwijk, Gijs; van Steenwijk, Gijs; Hoen, Klaas; Hoen, Klaas; Wallinga, Hans

1993-01-01

A charge pump circuit has been developed that can deliver high currents even for a system supply voltage of 3 V. The circuit consists of capacitances, connected by MOS switches. The influence of the on-resistance of the switches on the circuit's output resistance has been analysed. The switches are

FEA identification of high order generalized equivalent circuits for MF high voltage transformers

CERN Document Server

Candolfi, Sylvain; Cros, Jérôme; Aguglia, Davide

2015-01-01

This paper presents a specific methodology to derive high order generalized equivalent circuits from electromagnetic finite element analysis for high voltage medium frequency and pulse transformers by splitting the main windings in an arbitrary number of elementary windings. With this modeling approach, the dynamic model of the transformer over a large bandwidth is improved and the order of the generalized equivalent circuit can be adapted to a specified bandwidth. This efficient tool can be used by the designer to quantify the influence of the local structure of transformers on their dynamic behavior. The influence of different topologies and winding configurations is investigated. Several application examples and an experimental validation are also presented.

Development of 3D integrated circuits for HEP

International Nuclear Information System (INIS)

Yarema, R.; Fermilab

2006-01-01

Three dimensional integrated circuits are well suited to improving circuit bandwidth and increasing effective circuit density. Recent advances in industry have made 3D integrated circuits an option for HEP. The 3D technology is discussed in this paper and several examples are shown. Design of a 3D demonstrator chip for the ILC is presented

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

A fully integral, differential, high-speed, low-power consumption CMOS recovery clock circuit

Directory of Open Access Journals (Sweden)

Daniel Pacheco Bautista

2007-09-01

Full Text Available The clock recovery circuit (CRC plays a fundamental role in electronic information recovery systems (hard disks, DVD and CD read/writeable units and baseband digital communication systems in recovering the clock signal contained in the received data. This signal is necessary for synchronising subsequent information processing. Nowadays, this task is difficult to achieve because of the data’s random nature and its high transfer rate. This paper presents the design of a high-performance integral CMOS technology clock recovery circuit (CRC wor-king at 1.2 Gbps and only consuming 17.4 mW using a 3.3V power supply. The circuit was fully differentially designed to obtain high performance. Circuit architecture was based on a conventional phase lock loop (PLL, current mode logic (MCML and a novel two stage ring-based voltage controlled oscillator (VCO. The design used 0.35 μm CMOS AMS process parameters. Hspice simulation results proved the circuit’s high performance, achieving tracking in less than 300 ns.

Research of Measurement Circuits for High Voltage Current Transformer Based on Rogowski Coils

Directory of Open Access Journals (Sweden)

Yan Bing

2014-02-01

Full Text Available The electronic current transformer plays an irreplaceable position in the field of relay protection and current measurement of the power system. Rogowski coils are used as sensor parts, and in order to improve the measurement accuracy and reliability, the circuits at the high voltage system are introduced and improved in this paper, including the analog integral element, the filtering circuit and the phase shift circuit. Simulations results proved the reliability and accuracy of the improved circuits.

Analysis of High Power IGBT Short Circuit Failures

Energy Technology Data Exchange (ETDEWEB)

Pappas, G.

2005-02-11

The Next Linear Collider (NLC) accelerator proposal at SLAC requires a highly efficient and reliable, low cost, pulsed-power modulator to drive the klystrons. A solid-state induction modulator has been developed at SLAC to power the klystrons; this modulator uses commercial high voltage and high current Insulated Gate Bipolar Transistor (IGBT) modules. Testing of these IGBT modules under pulsed conditions was very successful; however, the IGBTs failed when tests were performed into a low inductance short circuit. The internal electrical connections of a commercial IGBT module have been analyzed to extract self and mutual partial inductances for the main current paths as well as for the gate structure. The IGBT module, together with the partial inductances, has been modeled using PSpice. Predictions for electrical paths that carry the highest current correlate with the sites of failed die under short circuit tests. A similar analysis has been carried out for a SLAC proposal for an IGBT module layout. This paper discusses the mathematical model of the IGBT module geometry and presents simulation results.

SEMICONDUCTOR INTEGRATED CIRCUITS: A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

Science.gov (United States)

Jizhi, Liu; Xingbi, Chen

2009-12-01

A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

A Low Speed BIST Framework for High Speed Circuit Testing

NARCIS (Netherlands)

Speek, H.; Kerkhoff, Hans G.; Shashaani, M.; Sachdev, M.

2000-01-01

Testing of high performance integrated circuits is becoming increasingly a challenging task owing to high clock frequencies. Often testers are not able to test such devices due to their limited high frequency capabilities. In this article we outline a design-for-test methodology such that high

Lithography for enabling advances in integrated circuits and devices.

Science.gov (United States)

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Real Time In-circuit Condition Monitoring of MOSFET in Power Converters

Directory of Open Access Journals (Sweden)

Shakeb A. Khan

2015-03-01

Full Text Available Abstract:This paper presents simple and low-cost, real time in-circuit condition monitoring of MOSFET in power electronic converters. Design metrics requirements like low cost, small size, high power factor, low percentage of total harmonic distortion etc. requires the power electronic systems to operate at high frequencies and at high power density. Failures of power converters are attributed largely by aging of power MOSFETs at high switching frequencies. Therefore, real time in-circuit prognostic of MOSFET needs to be done before their selection for power system design. Accelerated aging tests are performed in different circuits to determine the wear out failure of critical components based on their parametric degradation. In this paper, the simple and low-cost test beds are designed for real time in-circuit prognostics of power MOSFETs. The proposed condition monitoring scheme helps in estimating the condition of MOSFETs at their maximum rated operating condition and will aid the system designers to test their reliability and benchmark them before selecting in power converters.

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

Science.gov (United States)

Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2012-01-01

Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

Shared Reed-Muller Decision Diagram Based Thermal-Aware AND-XOR Decomposition of Logic Circuits

Directory of Open Access Journals (Sweden)

Apangshu Das

2016-01-01

Full Text Available The increased number of complex functional units exerts high power-density within a very-large-scale integration (VLSI chip which results in overheating. Power-densities directly converge into temperature which reduces the yield of the circuit. An adverse effect of power-density reduction is the increase in area. So, there is a trade-off between area and power-density. In this paper, we introduce a Shared Reed-Muller Decision Diagram (SRMDD based on fixed polarity AND-XOR decomposition to represent multioutput Boolean functions. By recursively applying transformations and reductions, we obtained a compact SRMDD. A heuristic based on Genetic Algorithm (GA increases the sharing of product terms by judicious choice of polarity of input variables in SRMDD expansion and a suitable area and power-density trade-off has been enumerated. This is the first effort ever to incorporate the power-density as a measure of temperature estimation in AND-XOR expansion process. The results of logic synthesis are incorporated with physical design in CADENCE digital synthesis tool to obtain the floor-plan silicon area and power profile. The proposed thermal-aware synthesis has been validated by obtaining absolute temperature of the synthesized circuits using HotSpot tool. We have experimented with 29 benchmark circuits. The minimized AND-XOR circuit realization shows average savings up to 15.23% improvement in silicon area and up to 17.02% improvement in temperature over the sum-of-product (SOP based logic minimization.

Manufacturing experience and test results of the PS prototype flexible hybrid circuit for the CMS Tracker Upgrade

CERN Document Server

Kovacs, Mark Istvan; Gadek, Tomasz; Honma, Alan; Vasey, Francois

2017-01-01

The CMS Tracker Phase-2 Upgrade for HL-LHC requires High Density Interconnect (HDI) flexible hybrid circuits to build modules with low mass and high granularity. The hybrids are carbon fibre reinforced flexible circuits with flip-chips and passives. Three different manufacturers produced prototype hybrids for the Pixel-Strip type modules. The first part of the presentation will focus on the design challenges of this state of the art circuit. Afterwards, the difficulties and experience related to the circuit manufacturing and assembly are presented. The description of quality inspection methods with comprehensive test results will lead to the conclusion.

Enhanced charging kinetics of porous electrodes: surface conduction as a short-circuit mechanism.

Science.gov (United States)

Mirzadeh, Mohammad; Gibou, Frederic; Squires, Todd M

2014-08-29

We use direct numerical simulations of the Poisson-Nernst-Planck equations to study the charging kinetics of porous electrodes and to evaluate the predictive capabilities of effective circuit models, both linear and nonlinear. The classic transmission line theory of de Levie holds for general electrode morphologies, but only at low applied potentials. Charging dynamics are slowed appreciably at high potentials, yet not as significantly as predicted by the nonlinear transmission line model of Biesheuvel and Bazant. We identify surface conduction as a mechanism which can effectively "short circuit" the high-resistance electrolyte in the bulk of the pores, thus accelerating the charging dynamics and boosting power densities. Notably, the boost in power density holds only for electrode morphologies with continuous conducting surfaces in the charging direction.

Radiation response of high speed CMOS integrated circuits

International Nuclear Information System (INIS)

Yue, H.; Davison, D.; Jennings, R.F.; Lothongkam, P.; Rinerson, D.; Wyland, D.

1987-01-01

This paper studies the total dose and dose rate radiation response of the FCT family of high speed CMOS integrated circuits. Data taken on the devices is used to establish the dominant failure modes, and this data is further analyzed using one-sided tolerance factors for normal distribution statistical analysis

Transient analysis of the output short-circuit fault of high power and high voltage DC power supply

International Nuclear Information System (INIS)

Yang Zhigang; Zhang Jian; Huang Yiyun; Hao Xu; Sun Haozhang; Guo Fei

2014-01-01

The transient conditions of output short-circuit fault of high voltage DC power supply was introduced, and the energy of power supply injecting into klystron during the protection process of three-electrode gas switch were analyzed and calculated in detail when klystron load happening electrode arc faults. The results of calculation and simulation are consistent with the results of the experiment. When the output short-circuit fault of high voltage power supply occurs, switch can be shut off in the microsecond, and the short circuit current can be controlled in 200 A. It has verified the rapidity and reliability of the three-electrode gas switch protection, and it has engineering application value. (authors)

Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

Science.gov (United States)

Weng, M. H.; Clark, D. T.; Wright, S. N.; Gordon, D. L.; Duncan, M. A.; Kirkham, S. J.; Idris, M. I.; Chan, H. K.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2017-05-01

A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

A High Power Density Single-Phase PWM Rectifier With Active Ripple Energy Storage

Energy Technology Data Exchange (ETDEWEB)

Wang, Ruxi [Virginia Polytechnic Institute and State University (Virginia Tech); Wang, Fei [ORNL; Boroyevich, Dushan [Virginia Polytechnic Institute and State University (Virginia Tech); Burgos, Rolando [ABB; Lai, Rixin [General Electric; Ning, Puqi [ORNL; Rajashekara, Kaushik [Rolls Royce

2011-01-01

It is well known that single-phase pulse width modulation rectifiers have second-order harmonic currents and corresponding ripple voltages on the dc bus. The low-frequency harmonic current is normally filtered using a bulk capacitor in the bus, which results in low power density. However, pursuing high power density in converter design is a very important goal in the aerospace applications. This paper studies methods for reducing the energy storage capacitor for single-phase rectifiers. The minimum ripple energy storage requirement is derived independently of a specific topology. Based on theminimum ripple energy requirement, the feasibility of the active capacitor s reduction schemes is verified. Then, we propose a bidirectional buck boost converter as the ripple energy storage circuit, which can effectively reduce the energy storage capacitance. The analysis and design are validated by simulation and experimental results.

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Science.gov (United States)

2010-07-01

... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded systems. [Statutory Provisions] On and after September 30, 1970, high-voltage, resistance grounded systems... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage...

Infant mortality testing of high energy-density capacitors used on Nova

International Nuclear Information System (INIS)

Merritt, B.T.; Whitham, K.

1983-01-01

Nova is a solid state large laser for inertial confinement fusion research. Its flashlamps are driven by a 60 MJ capacitor bank. Part of this bank is being built with high energy-density capacitors, 52 μF, 22 KV, 12.5 KJ. A total of 2,645 of these capacitors have been purchased from two manufacturers. Each capacitor was infant mortality tested. The first test consisted of a high-potential test, bushing-to-case, since these capacitors have dual bushings. Then the capacitors were discharged 500 times with circuit conditions approximating the capacitors normal flashlamp load. Failure of either of these tests or if the capacitor was leaking was cause for rejection. The test results were remarkably good. Less than 0.5 percent failed the pulse-discharge test and less than 2.5 percent were rejected overall

High accuracy injection circuit for the calibration of a large pixel sensor matrix

International Nuclear Information System (INIS)

Quartieri, E.; Comotti, D.; Manghisoni, M.

2013-01-01

Semiconductor pixel detectors, for particle tracking and vertexing in high energy physics experiments as well as for X-ray imaging, in particular for synchrotron light sources and XFELs, require a large area sensor matrix. This work will discuss the design and the characterization of a high-linearity, low dispersion injection circuit to be used for pixel-level calibration of detector readout electronics in a large pixel sensor matrix. The circuit provides a useful tool for the characterization of the readout electronics of the pixel cell unit for both monolithic active pixel sensors and hybrid pixel detectors. In the latter case, the circuit allows for precise analogue test of the readout channel already at the chip level, when no sensor is connected. Moreover, it provides a simple means for calibration of readout electronics once the detector has been connected to the chip. Two injection techniques can be provided by the circuit: one for a charge sensitive amplification and the other for a transresistance readout channel. The aim of the paper is to describe the architecture and the design guidelines of the calibration circuit, which has been implemented in a 130 nm CMOS technology. Moreover, experimental results of the proposed injection circuit will be presented in terms of linearity and dispersion

30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

Science.gov (United States)

2010-07-01

... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... grounded through a suitable resistor at the source transformers, and a grounding circuit, originating at...

Solid-state circuits

CERN Document Server

Pridham, G J

2013-01-01

Solid-State Circuits provides an introduction to the theory and practice underlying solid-state circuits, laying particular emphasis on field effect transistors and integrated circuits. Topics range from construction and characteristics of semiconductor devices to rectification and power supplies, low-frequency amplifiers, sine- and square-wave oscillators, and high-frequency effects and circuits. Black-box equivalent circuits of bipolar transistors, physical equivalent circuits of bipolar transistors, and equivalent circuits of field effect transistors are also covered. This volume is divided

Circuit bridging of digital equipment caused by smoke from a cable fire

International Nuclear Information System (INIS)

Tanaka, T.J.; Anderson, D.J.

1997-01-01

Advanced reactor systems are likely to use protection systems with digital electronics that ideally should be resistant to environmental hazards, including smoke from possible cable fires. Previous smoke tests have shown that digital safety systems can fail even at relatively low levels of smoke density and that short-term failures are likely to be caused by circuit bridging. Experiments were performed to examine these failures, with a focus on component packaging and protection schemes. Circuit bridging, which causes increased leakage currents and arcs, was gauged by measuring leakage currents among the leads of component packages. The resistance among circuit leads typically varies over a wide range, depending on the nature of the circuitry between the pins, bias conditions, circuit board material, etc. Resistance between leads can be as low as 20 kΩ and still be good, depending on the component. For these tests, the authors chose a printed circuit board and components that normally have an interlead resistance above 10 12 Ω, but if the circuit is exposed to smoke, circuit bridging causes the resistance to fall below 10 3 Ω. Plated-through-hole (PTH) and surface-mounted (SMT) packages were exposed to a series of different smoke environments using a mixture of environmentally qualified cables for fuel. Conformal coatings and enclosures were tested as circuit protection methods. High fuel levels, high humidity, and high flaming burns were the conditions most likely to cause circuit bridging. The inexpensive conformal coating that was tested - an acrylic spray - reduced leakage currents, but enclosure in a chassis with a fan did not. PTH packages were more resistant to smoke-induced circuit bridging than SMT packages. Active components failed most often in tests where the leakage currents were high, but failure did not always accompany high leakage currents

Micro- and nano-scale optical devices for high density photonic integrated circuits at near-infrared wavelengths

Science.gov (United States)

Chatterjee, Rohit

In this research work, we explore fundamental silicon-based active and passive photonic devices that can be integrated together to form functional photonic integrated circuits. The devices which include power splitters, switches and lenses are studied starting from their physics, their design and fabrication techniques and finally from an experimental standpoint. The experimental results reveal high performance devices that are compatible with standard CMOS fabrication processes and can be easily integrated with other devices for near infrared telecom applications. In Chapter 2, a novel method for optical switching using nanomechanical proximity perturbation technique is described and demonstrated. The method which is experimentally demonstrated employs relatively low powers, small chip footprint and is compatible with standard CMOS fabrication processes. Further, in Chapter 3, this method is applied to develop a hitless bypass switch aimed at solving an important issue in current wavelength division multiplexing systems namely hitless switching of reconfigurable optical add drop multiplexers. Experimental results are presented to demonstrate the application of the nanomechanical proximity perturbation technique to practical situations. In Chapter 4, a fundamental photonic component namely the power splitter is described. Power splitters are important components for any photonic integrated circuits because they help split the power from a single light source to multiple devices on the same chip so that different operations can be performed simultaneously. The power splitters demonstrated in this chapter are based on multimode interference principles resulting in highly compact low loss and highly uniform power splitting to split the power of the light from a single channel to two and four channels. These devices can further be scaled to achieve higher order splitting such as 1x16 and 1x32 power splits. Finally in Chapter 5 we overcome challenges in device

Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

DEFF Research Database (Denmark)

Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

2014-01-01

-out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Science.gov (United States)

2010-07-01

... circuits on high-voltage resistance grounded systems. On and after September 30, 1971, all high-voltage... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage resistance grounded systems. 77.803 Section 77.803 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION...

Short Circuits of a 10 MW High Temperature Superconducting Wind Turbine Generator

DEFF Research Database (Denmark)

Song, Xiaowei (Andy); Liu, Dong; Polinder, Henk

2016-01-01

Direct drive high temperature superconducting (HTS) wind turbine generators have been proposed to tackle challenges for ever increasing wind turbine ratings. Due to smaller reactances in HTS generators, higher fault currents and larger transient torques could occur if sudden short circuits happen...... at generator terminals. In this paper, a finite element model that couples magnetic fields and the generator’s equivalent circuits is developed to simulate short circuit faults. Afterwards, the model is used to study the transient performance of a 10 MW HTS wind turbine generator under four different short...... that the short circuits pose great challenges to the generator, and careful consideration should be given to protect the generator. The results presented in this paper would be beneficial to the design, operation and protection of an HTS wind turbine generator....

Short Circuits of a 10-MW High-Temperature Superconducting Wind Turbine Generator

DEFF Research Database (Denmark)

Song, Xiaowei (Andy); Liu, Dong; Polinder, Henk

2017-01-01

Direct Drive high-temperature superconducting (HTS) wind turbine generators have been proposed to tackle challenges for ever increasing wind turbine ratings. Due to smaller reactances in HTS generators, higher fault currents and larger transient torques could occur if sudden short circuits take...... place at generator terminals. In this paper, a finite element model that couples magnetic fields and the generator's equivalent circuits is developed to simulate short-circuit faults. Afterward, the model is used to study the transient performance of a 10-MW HTS wind turbine generator under four...... show that the short circuits pose great challenges to the generator, and careful consideration should be given to protect the generator. The findings presented in this paper would be beneficial to the design, operation and protection of an HTS wind turbine generator....

Enhancement of short-circuit current density in polymer bulk heterojunction solar cells comprising plasmonic silver nanowires

Energy Technology Data Exchange (ETDEWEB)

Yang, Yuzhao; Lin, Xiaofeng; Ou, Jiemei; Chen, Xudong, E-mail: cescxd@mail.sysu.edu.cn, E-mail: stszx@mail.sysu.edu.cn, E-mail: chenyj69@mail.sysu.edu.cn [Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education of China, Sun Yat-sen University, Guangzhou 510275 (China); Qing, Jian; Zhong, Zhenfeng; Zhou, Xiang, E-mail: cescxd@mail.sysu.edu.cn, E-mail: stszx@mail.sysu.edu.cn, E-mail: chenyj69@mail.sysu.edu.cn; Chen, Yujie, E-mail: cescxd@mail.sysu.edu.cn, E-mail: stszx@mail.sysu.edu.cn, E-mail: chenyj69@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Hu, Chenglong [Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University, Wuhan 430056 (China)

2014-03-24

We demonstrate that the influence of plasmonic effects based on silver nanowires (Ag NWs) on the characteristics of polymer solar cells (PSCs). The solution-processed Ag NWs are situated at the interface of anode buffer layer and active layer, which could enhance the performance especially the photocurrent of PSCs by scattering, localized surface plasmon resonance, and surface plasmon polaritons. Plasmonic effects are confirmed by the enhancement of extinction spectra, external quantum efficiency, and steady state photoluminescence. Consequently, the short-circuit current density (J{sub sc}) and power conversion efficiency enhance about 24% and 18%, respectively, under AM1.5 illumination when Ag NWs plasmonic nanostructure incorporated into PSCs.

Wireless sEMG System with a Microneedle-Based High-Density Electrode Array on a Flexible Substrate.

Science.gov (United States)

Kim, Minjae; Gu, Gangyong; Cha, Kyoung Je; Kim, Dong Sung; Chung, Wan Kyun

2017-12-30

Surface electromyography (sEMG) signals reflect muscle contraction and hence, can provide information regarding a user's movement intention. High-density sEMG systems have been proposed to measure muscle activity in small areas and to estimate complex motion using spatial patterns. However, conventional systems based on wet electrodes have several limitations. For example, the electrolyte enclosed in wet electrodes restricts spatial resolution, and these conventional bulky systems limit natural movements. In this paper, a microneedle-based high-density electrode array on a circuit integrated flexible substrate for sEMG is proposed. Microneedles allow for high spatial resolution without requiring conductive substances, and flexible substrates guarantee stable skin-electrode contact. Moreover, a compact signal processing system is integrated with the electrode array. Therefore, sEMG measurements are comfortable to the user and do not interfere with the movement. The system performance was demonstrated by testing its operation and estimating motion using a Gaussian mixture model-based, simplified 2D spatial pattern.

Model reduction for circuit simulation

CERN Document Server

Hinze, Michael; Maten, E Jan W Ter

2011-01-01

Simulation based on mathematical models plays a major role in computer aided design of integrated circuits (ICs). Decreasing structure sizes, increasing packing densities and driving frequencies require the use of refined mathematical models, and to take into account secondary, parasitic effects. This leads to very high dimensional problems which nowadays require simulation times too large for the short time-to-market demands in industry. Modern Model Order Reduction (MOR) techniques present a way out of this dilemma in providing surrogate models which keep the main characteristics of the devi

Performance Analysis of Modified Drain Gating Techniques for Low Power and High Speed Arithmetic Circuits

Directory of Open Access Journals (Sweden)

Shikha Panwar

2014-01-01

Full Text Available This paper presents several high performance and low power techniques for CMOS circuits. In these design methodologies, drain gating technique and its variations are modified by adding an additional NMOS sleep transistor at the output node which helps in faster discharge and thereby providing higher speed. In order to achieve high performance, the proposed design techniques trade power for performance in the delay critical sections of the circuit. Intensive simulations are performed using Cadence Virtuoso in a 45 nm standard CMOS technology at room temperature with supply voltage of 1.2 V. Comparative analysis of the present circuits with standard CMOS circuits shows smaller propagation delay and lesser power consumption.

Numerical simulation for arc-plasma dynamics during contact opening process in electrical circuit-breakers

International Nuclear Information System (INIS)

Gupta, D N; Srinivas, D; Patil, G N; Kale, S S; Potnis, S B

2010-01-01

The high-energy, high-current thermal plasma that develops between electric contacts in a gas circuit-breaker during circuit interruption is an important phenomenon in the power transmission industry. The high temperature and pressure arc dissipates the tremendous amount of energy generated by the fault current. Simultaneously, this energy has to be transferred away from the contacts to build the dielectric strength level of the circuit-breaker. In order to interrupt the current, the arc must be weakened and finally extinguished. We model these phenomena by using a computer software code based on the solution of the unsteady Euler equations of gas dynamics. We consider the equations of fluid flows. These equations are solved numerically in complex circuit breaker geometries using a finite-volume method. The domain is initially filled with SF 6 gas. We begin our simulations from cold mode, where the fault current is not present (hence no arc). An axis-symmetric geometry of a 145 kV gas circuit-breaker is considered to study the pressure, density, and temperature profile during contact opening process.

Integrated Circuit Design in US High-Energy Physics

Energy Technology Data Exchange (ETDEWEB)

Geronimo, G. D. [Brookhaven National Lab. (BNL), Upton, NY (United States); Christian, D. [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Bebek, C. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Garcia-Sciveres, M. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lippe, H. V. D. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Haller, G. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Grillo, AA [Univ. of California, Santa Cruz, CA (United States); Newcomer, M [Univ. of Pennsylvania, Philadelphia, PA (United States)

2013-07-10

This whitepaper summarizes the status, plans, and challenges in the area of integrated circuit design in the United States for future High Energy Physics (HEP) experiments. It has been submitted to CPAD (Coordinating Panel for Advanced Detectors) and the HEP Community Summer Study 2013(Snowmass on the Mississippi) held in Minnesota July 29 to August 6, 2013. A workshop titled: US Workshop on IC Design for High Energy Physics, HEPIC2013 was held May 30 to June 1, 2013 at Lawrence Berkeley National Laboratory (LBNL). A draft of the whitepaper was distributed to the attendees before the workshop, the content was discussed at the meeting, and this document is the resulting final product. The scope of the whitepaper includes the following topics: Needs for IC technologies to enable future experiments in the three HEP frontiers Energy, Cosmic and Intensity Frontiers; Challenges in the different technology and circuit design areas and the related R&D needs; Motivation for using different fabrication technologies; Outlook of future technologies including 2.5D and 3D; Survey of ICs used in current experiments and ICs targeted for approved or proposed experiments; IC design at US institutes and recommendations for collaboration in the future.

Heat sinking of highly integrated photonic and electronic circuits

NARCIS (Netherlands)

van Rijn, M.B.J.; Smit, M.K.

2017-01-01

Dense integration of photonic and electronic circuits poses high requirements on thermal management. In this paper we present analysis of temperature distributions in PICs in InP membranes on top of a BiCMOS chip, which contain hot spots in both the photonic and the electronic layer (lasers, optical

Equivalent Circuit of a High Q Tunable PIFA

DEFF Research Database (Denmark)

Barrio, Samantha Caporal Del; Pelosi, Mauro; Franek, Ondrej

2011-01-01

This paper presents an Equivalent Circuit Model (ECM) for a high Quality factor (Q) tunable Planar Inverted F Antenna (PIFA). A PIFA is described and simulated with the Finite-Difference Time-Domain (FDTD) method. The resonance behavior of the proposed ECM is compared to the FDTD results and shows...... a match. The ECM is also valid when the PIFA is made tunable with an additional capacitor....

Entrainment and high-density three-dimensional mapping in right atrial macroreentry provide critical complementary information: Entrainment may unmask "visual reentry" as passive.

Science.gov (United States)

Pathik, Bhupesh; Lee, Geoffrey; Nalliah, Chrishan; Joseph, Stephen; Morton, Joseph B; Sparks, Paul B; Sanders, Prashanthan; Kistler, Peter M; Kalman, Jonathan M

2017-10-01

With the recent advent of high-density (HD) 3-dimensional (3D) mapping, the utility of entrainment is uncertain. However, the limitations of visual representation and interpretation of these high-resolution 3D maps are unclear. The purpose of this study was to determine the strengths and limitations of both HD 3D mapping and entrainment mapping during mapping of right atrial macroreentry. Fifteen patients were studied. The number and type of circuits accounting for ≥90% of the tachycardia cycle length using HD 3D mapping were verified using systematic entrainment mapping. Entrainment sites with an unexpectedly long postpacing interval despite proximity to the active circuit were evaluated. Based on HD 3D mapping, 27 circuits were observed: 12 peritricuspid, 2 upper loop reentry, 10 lower loop reentry, and 3 lateral wall circuits. With entrainment, 17 of the 27 circuits were active: all 12 peritricuspid and 2 upper loop reentry. However, lower loop reentry was confirmed in only 3 of 10, and none of the 3 lateral wall circuits were present. Mean percentage of tachycardia cycle length covered by active circuits was 98% ± 1% vs 97% ± 2% for passive circuits (P = .09). None of the 345 entrainment runs terminated tachycardia or changed tachycardia mechanism. In 8 of 15 patients, 13 examples of unexpectedly long postpacing interval were observed at entrainment sites located distal to localized zones of slow conduction seen on HD 3D mapping. Using HD 3D mapping, "visual reentry" may be due to passive circuitous propagation rather than a critical reentrant circuit. HD 3D mapping provides new insights into regional conduction and helps explain unusual entrainment phenomena. Copyright © 2017 Heart Rhythm Society. Published by Elsevier Inc. All rights reserved.

Circuit for Communication over DC Power Line Using High Temperature Electronics

Science.gov (United States)

Krasowski, Michael J. (Inventor); Prokop, Norman F. (Inventor)

2014-01-01

A high temperature communications circuit includes a power conductor for concurrently conducting electrical energy for powering circuit components and transmitting a modulated data signal, and a demodulator for demodulating the data signal and generating a serial bit stream based on the data signal. The demodulator includes an absolute value amplifier for conditionally inverting or conditionally passing a signal applied to the absolute value amplifier. The absolute value amplifier utilizes no diodes to control the conditional inversion or passing of the signal applied to the absolute value amplifier.

Chaotic dynamics with high complexity in a simplified new nonautonomous nonlinear electronic circuit

International Nuclear Information System (INIS)

Arulgnanam, A.; Thamilmaran, K.; Daniel, M.

2009-01-01

A two dimensional nonautonomous dissipative forced series LCR circuit with a simple nonlinear element exhibiting an immense variety of dynamical features is proposed for the first time. Unlike the usual cases of nonlinear element, the nonlinear element used here possesses three segment piecewise linear character with one positive and one negative slope. This nonlinearity is verified to be sufficient to produce chaos with high complexity in many established nonautonomous nonlinear circuits, such as MLC, MLCV, driven Chua, etc., thus indicating an universal behavior similar to the familiar Chua's diode. The dynamics of the proposed circuit is studied experimentally, confirmed numerically, simulated through PSPICE and proved mathematically. An important feature of the circuit is its ability to show dual chaotic behavior.

Importing low-density ideas to high-density revitalisation

DEFF Research Database (Denmark)

Arnholtz, Jens; Ibsen, Christian Lyhne; Ibsen, Flemming

2016-01-01

Why did union officials from a high-union-density country like Denmark choose to import an organising strategy from low-density countries such as the US and the UK? Drawing on in-depth interviews with key union officials and internal documents, the authors of this article argue two key points. Fi...

High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit

International Nuclear Information System (INIS)

Wu Chiasong; Lin Tah-Yeong; Wu Hsien-Ming

2010-01-01

A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit (MMIC), which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The power amplifier (PA) was studied taking into account the linearizer circuit and the coplanar waveguide (CPW) structures. Based on these technologies, the power amplifier, which has a chip size of 1.44 x 1.10 mm 2 , obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region. An input third-order intercept point (HP 3 ) of -3 dBm, an output third-order intercept point (OIP 3 ) of 21.1 dBm and a power added efficiency (PAE) of 22% were attained, respectively. Finally, the overall power characterization exhibited high gain and high linearity, which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics. This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz. (semiconductor integrated circuits)

The circuit of polychromator for Experimental Advanced Superconducting Tokamak edge Thomson scattering diagnostic

International Nuclear Information System (INIS)

Zang, Qing; Zhao, Junyu; Chen, Hui; Li, Fengjuan; Hsieh, C. L.

2013-01-01

The detector circuit is the core component of filter polychromator which is used for scattering light analysis in Thomson scattering diagnostic, and is responsible for the precision and stability of a system. High signal-to-noise and stability are primary requirements for the diagnostic. Recently, an upgraded detector circuit for weak light detecting in Experimental Advanced Superconducting Tokamak (EAST) edge Thomson scattering system has been designed, which can be used for the measurement of large electron temperature (T e ) gradient and low electron density (n e ). In this new circuit, a thermoelectric-cooled avalanche photodiode with the aid circuit is involved for increasing stability and enhancing signal-to-noise ratio (SNR), especially the circuit will never be influenced by ambient temperature. These features are expected to improve the accuracy of EAST Thomson diagnostic dramatically. Related mechanical construction of the circuit is redesigned as well for heat-sinking and installation. All parameters are optimized, and SNR is dramatically improved. The number of minimum detectable photons is only 10

An energy-efficient high-performance processor with reconfigurable data-paths using RSFQ circuits

International Nuclear Information System (INIS)

Takagi, Naofumi

2013-01-01

Highlights: ► An idea of a high-performance computer using RSFQ circuits is shown. ► An outline of processor with reconfigurable data-paths (RDPs) is shown. ► Architectural details of an SFQ-RDP are described. -- Abstract: We show recent progress in our research on an energy-efficient high-performance processor with reconfigurable data-paths (RDPs) using rapid single-flux-quantum (RSFQ) circuits. We mainly describe the architectural details of an RDP implemented using RSFQ circuits. An RDP consists of a lot of floating-point units (FPUs) and operand routing networks (ORNs) which connect the FPUs. We reconfigure the RDP to fit a computation, i.e., a group of floating-point operations, appearing in a ‘for’ loop of programs for numerical computations by setting the route in ORNs before the execution of the loop. In the RDP, a lot of FPUs work in parallel with pipelined fashion, and hence, very high-performance computation is achieved

Unraveling the High Open Circuit Voltage and High Performance of Integrated Perovskite/Organic Bulk-Heterojunction Solar Cells.

Science.gov (United States)

Dong, Shiqi; Liu, Yongsheng; Hong, Ziruo; Yao, Enping; Sun, Pengyu; Meng, Lei; Lin, Yuze; Huang, Jinsong; Li, Gang; Yang, Yang

2017-08-09

We have demonstrated high-performance integrated perovskite/bulk-heterojunction (BHJ) solar cells due to the low carrier recombination velocity, high open circuit voltage (V OC ), and increased light absorption ability in near-infrared (NIR) region of integrated devices. In particular, we find that the V OC of the integrated devices is dominated by (or pinned to) the perovskite cells, not the organic photovoltaic cells. A Quasi-Fermi Level Pinning Model was proposed to understand the working mechanism and the origin of the V OC of the integrated perovskite/BHJ solar cell, which following that of the perovskite solar cell and is much higher than that of the low bandgap polymer based organic BHJ solar cell. Evidence for the model was enhanced by examining the charge carrier behavior and photovoltaic behavior of the integrated devices under illumination of monochromatic light-emitting diodes at different characteristic wavelength. This finding shall pave an interesting possibility for integrated photovoltaic devices to harvest low energy photons in NIR region and further improve the current density without sacrificing V OC , thus providing new opportunities and significant implications for future industry applications of this kind of integrated solar cells.

Multiplier less high-speed squaring circuit for binary numbers

Science.gov (United States)

Sethi, Kabiraj; Panda, Rutuparna

2015-03-01

The squaring operation is important in many applications in signal processing, cryptography etc. In general, squaring circuits reported in the literature use fast multipliers. A novel idea of a squaring circuit without using multipliers is proposed in this paper. Ancient Indian method used for squaring decimal numbers is extended here for binary numbers. The key to our success is that no multiplier is used. Instead, one squaring circuit is used. The hardware architecture of the proposed squaring circuit is presented. The design is coded in VHDL and synthesised and simulated in Xilinx ISE Design Suite 10.1 (Xilinx Inc., San Jose, CA, USA). It is implemented in Xilinx Vertex 4vls15sf363-12 device (Xilinx Inc.). The results in terms of time delay and area is compared with both modified Booth's algorithm and squaring circuit using Vedic multipliers. Our proposed squaring circuit seems to have better performance in terms of both speed and area.

High Energy Density Laboratory Astrophysics

CERN Document Server

Lebedev, Sergey V

2007-01-01

During the past decade, research teams around the world have developed astrophysics-relevant research utilizing high energy-density facilities such as intense lasers and z-pinches. Every two years, at the International conference on High Energy Density Laboratory Astrophysics, scientists interested in this emerging field discuss the progress in topics covering: - Stellar evolution, stellar envelopes, opacities, radiation transport - Planetary Interiors, high-pressure EOS, dense plasma atomic physics - Supernovae, gamma-ray bursts, exploding systems, strong shocks, turbulent mixing - Supernova remnants, shock processing, radiative shocks - Astrophysical jets, high-Mach-number flows, magnetized radiative jets, magnetic reconnection - Compact object accretion disks, x-ray photoionized plasmas - Ultrastrong fields, particle acceleration, collisionless shocks. These proceedings cover many of the invited and contributed papers presented at the 6th International Conference on High Energy Density Laboratory Astrophys...

Performance of digital integrated circuit technologies at very high temperatures

Energy Technology Data Exchange (ETDEWEB)

Prince, J.L.; Draper, B.L.; Rapp, E.A.; Kromberg, J.N.; Fitch, L.T.

1980-01-01

Results of investigations of the performance and reliability of digital bipolar and CMOS integrated circuits over the 25 to 340/sup 0/C range are reported. Included in these results are both parametric variation information and analysis of the functional failure mechanisms. Although most of the work was done using commercially available circuits (TTL and CMOS) and test chips from commercially compatible processes, some results of experimental simulations of dielectrically isolated CMOS are also discussed. It was found that commercial Schottky clamped TTL, and dielectrically isolated, low power Schottky-clamped TTL, functioned to junction temperatures in excess of 325/sup 0/C. Standard gold doped TTL functioned only to 250/sup 0/C, while commercial, isolated I/sup 2/L functioned to the range 250/sup 0/C to 275/sup 0/C. Commercial junction isolated CMOS, buffered and unbuffered, functioned to the range 280/sup 0/C to 310/sup 0/C/sup +/, depending on the manufacturer. Experimental simulations of simple dielectrically isolated CMOS integrated circuits, fabricated with heavier doping levels than normal, functioned to temperatures in excess of 340/sup 0/C. High temperature life testing of experimental, silicone-encapsulated simple TTL and CMOS integrated circuits have shown no obvious life limiting problems to date. No barrier to reliable functionality of TTL bipolar or CMOS integrated ciruits at temperatures in excess of 300/sup 0/C has been found.

High current densities enable exoelectrogens to outcompete aerobic heterotrophs for substrate

KAUST Repository

Ren, Lijiao

2014-08-05

© 2014 Wiley Periodicals, Inc. Chemical oxygen demand (COD) removal rates could be described by first-order kinetics with respect to COD concentration at different current densities, even under open circuit conditions with no current generation. The COD concentration was reduced more quickly with current generation due to the greater consumption of substrate by exoelectrogens, and less substrate was lost to aerobic heterotrophs. Higher current densities enabled exoelectrogens to outcompete aerobic heterotrophs for substrate, allowing for increased coulombic efficiencies with current densities. © 2014 Wiley Periodicals, Inc. In mixed-culture microbial fuel cells (MFCs), exoelectrogens and other microorganisms compete for substrate. It has previously been assumed that substrate losses to other terminal electron acceptors over a fed-batch cycle, such as dissolved oxygen, are constant. However, a constant rate of substrate loss would only explain small increases in coulombic efficiencies (CEs, the fraction of substrate recovered as electrical current) with shorter cycle times, but not the large increases in CE that are usually observed with higher current densities and reduced cycle times. To better understand changes in CEs, COD concentrations were measured over time in fed-batch, single-chamber, air-cathode MFCs at different current densities (external resistances). COD degradation rates were all found to be first-order with respect to COD concentration, even under open circuit conditions with no current generation (first-order rate constant of 0.14±0.01h-1). The rate of COD removal increased when there was current generation, with the highest rate constant (0.33±0.02h-1) obtained at the lowest external resistance (100Ω). Therefore, as the substrate concentration was reduced more quickly due to current generation, the rate of loss of substrate to non-exoelectrogens decreased due to this first-order substrate-concentration dependence. As a result, coulombic

High current densities enable exoelectrogens to outcompete aerobic heterotrophs for substrate

KAUST Repository

Ren, Lijiao; Zhang, Xiaoyuan; He, Weihua; Logan, Bruce E.

2014-01-01

© 2014 Wiley Periodicals, Inc. Chemical oxygen demand (COD) removal rates could be described by first-order kinetics with respect to COD concentration at different current densities, even under open circuit conditions with no current generation. The COD concentration was reduced more quickly with current generation due to the greater consumption of substrate by exoelectrogens, and less substrate was lost to aerobic heterotrophs. Higher current densities enabled exoelectrogens to outcompete aerobic heterotrophs for substrate, allowing for increased coulombic efficiencies with current densities. © 2014 Wiley Periodicals, Inc. In mixed-culture microbial fuel cells (MFCs), exoelectrogens and other microorganisms compete for substrate. It has previously been assumed that substrate losses to other terminal electron acceptors over a fed-batch cycle, such as dissolved oxygen, are constant. However, a constant rate of substrate loss would only explain small increases in coulombic efficiencies (CEs, the fraction of substrate recovered as electrical current) with shorter cycle times, but not the large increases in CE that are usually observed with higher current densities and reduced cycle times. To better understand changes in CEs, COD concentrations were measured over time in fed-batch, single-chamber, air-cathode MFCs at different current densities (external resistances). COD degradation rates were all found to be first-order with respect to COD concentration, even under open circuit conditions with no current generation (first-order rate constant of 0.14±0.01h-1). The rate of COD removal increased when there was current generation, with the highest rate constant (0.33±0.02h-1) obtained at the lowest external resistance (100Ω). Therefore, as the substrate concentration was reduced more quickly due to current generation, the rate of loss of substrate to non-exoelectrogens decreased due to this first-order substrate-concentration dependence. As a result, coulombic

A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

International Nuclear Information System (INIS)

Liu Jizhi; Chen Xingbi

2009-01-01

A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate. (semiconductor integrated circuits)

A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

Energy Technology Data Exchange (ETDEWEB)

Liu Jizhi; Chen Xingbi, E-mail: jzhliu@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2009-12-15

A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate. (semiconductor integrated circuits)

Toward a generalized and high-throughput enzyme screening system based on artificial genetic circuits.

Science.gov (United States)

Choi, Su-Lim; Rha, Eugene; Lee, Sang Jun; Kim, Haseong; Kwon, Kilkoang; Jeong, Young-Su; Rhee, Young Ha; Song, Jae Jun; Kim, Hak-Sung; Lee, Seung-Goo

2014-03-21

Large-scale screening of enzyme libraries is essential for the development of cost-effective biological processes, which will be indispensable for the production of sustainable biobased chemicals. Here, we introduce a genetic circuit termed the Genetic Enzyme Screening System that is highly useful for high-throughput enzyme screening from diverse microbial metagenomes. The circuit consists of two AND logics. The first AND logic, the two inputs of which are the target enzyme and its substrate, is responsible for the accumulation of a phenol compound in cell. Then, the phenol compound and its inducible transcription factor, whose activation turns on the expression of a reporter gene, interact in the other logic gate. We confirmed that an individual cell harboring this genetic circuit can present approximately a 100-fold higher cellular fluorescence than the negative control and can be easily quantified by flow cytometry depending on the amounts of phenolic derivatives. The high sensitivity of the genetic circuit enables the rapid discovery of novel enzymes from metagenomic libraries, even for genes that show marginal activities in a host system. The crucial feature of this approach is that this single system can be used to screen a variety of enzymes that produce a phenol compound from respective synthetic phenyl-substrates, including cellulase, lipase, alkaline phosphatase, tyrosine phenol-lyase, and methyl parathion hydrolase. Consequently, the highly sensitive and quantitative nature of this genetic circuit along with flow cytometry techniques could provide a widely applicable toolkit for discovering and engineering novel enzymes at a single cell level.

Development of liquid film thickness measurement technique by high-density multipoint electrodes method

International Nuclear Information System (INIS)

Arai, Takahiro; Furuya, Masahiro; Kanai, Taizo

2010-01-01

High-density multipoint electrode method was developed to measure a liquid film thickness transient on a curved surface. The devised method allows us to measure spatial distribution of liquid film with its conductance between electrodes. The sensor was designed and fabricated as a multilayer print circuit board, where electrode pairs were distributed in reticular pattern with narrow interval. In order to measure a lot of electrode pairs at a high sampling rate, signal-processing method used by the wire mesh sensor measurement system was applied. An electrochemical impedance spectrometry concludes that the sampling rate of 1000 slices/s is feasible without signal distortion by electric double layer. The method was validated with two experimental campaigns: (1) a droplet impingement on a flat film and (2) a jet impingement on a rod-shape sensor surface. In the former experiment, a water droplet having 4 mm in diameter impinged onto the 1 mm thick film layer. A visual observation study with high-speed video camera shows after the liquid impingement, the water layer thinning process was clearly demonstrated with the sensor. For the latter experiment, the flexible circuit board was bended to form a cylindrical shape to measure water film on a simulated fuel rod in bundle geometry. A water jet having 3 mm in diameter impinged onto the rod-shape sensor surface. The process of wetting area enlargement on the rod surface was demonstrated in the same manner that the video-frames showed. (author)

Design, Simulation and Characteristics Research of the Interface Circuit based on nano-polysilicon thin films pressure sensor

Science.gov (United States)

Zhao, Xiaosong; Zhao, Xiaofeng; Yin, Liang

2018-03-01

This paper presents a interface circuit for nano-polysilicon thin films pressure sensor. The interface circuit includes consist of instrument amplifier and Analog-to-Digital converter (ADC). The instrumentation amplifier with a high common mode rejection ratio (CMRR) is implemented by three stages current feedback structure. At the same time, in order to satisfy the high precision requirements of pressure sensor measure system, the 1/f noise corner of 26.5 mHz can be achieved through chopping technology at a noise density of 38.2 nV/sqrt(Hz).Ripple introduced by chopping technology adopt continuous ripple reduce circuit (RRL), which achieves the output ripple level is lower than noise. The ADC achieves 16 bits significant digit by adopting sigma-delta modulator with fourth-order single-bit structure and digital decimation filter, and finally achieves high precision integrated pressure sensor interface circuit.

High-density multicore fibers

DEFF Research Database (Denmark)

Takenaga, K.; Matsuo, S.; Saitoh, K.

2016-01-01

High-density single-mode multicore fibers were designed and fabricated. A heterogeneous 30-core fiber realized a low crosstalk of −55 dB. A quasi-single-mode homogeneous 31-core fiber attained the highest core count as a single-mode multicore fiber.......High-density single-mode multicore fibers were designed and fabricated. A heterogeneous 30-core fiber realized a low crosstalk of −55 dB. A quasi-single-mode homogeneous 31-core fiber attained the highest core count as a single-mode multicore fiber....

Photonic Integrated Circuits for Cost-Effective, High Port Density, and Higher Capacity Optical Communications Systems

Science.gov (United States)

Chiappa, Pierangelo

Bandwidth-hungry services, such as higher speed Internet, voice over IP (VoIP), and IPTV, allow people to exchange and store huge amounts of data among worldwide locations. In the age of global communications, domestic users, companies, and organizations around the world generate new contents making bandwidth needs grow exponentially, along with the need for new services. These bandwidth and connectivity demands represent a concern for operators who require innovative technologies to be ready for scaling. To respond efficiently to these demands, Alcatel-Lucent is fast moving toward photonic integration circuits technologies as the key to address best performances at the lowest "bit per second" cost. This article describes Alcatel-Lucent's contribution in strategic directions or achievements, as well as possible new developments.

An integral whole circuit of amplifying and discriminating suited to high counting rate

International Nuclear Information System (INIS)

Dong Chengfu; Su Hong; Wu Ming; Li Xiaogang; Peng Yu; Qian Yi; Liu Yicai; Xu Sijiu; Ma Xiaoli

2007-01-01

A hybrid circuit consists of charge sensitive preamplifier, main amplifier, discriminator and shaping circuit was described. This instrument has characteristics of low power consumption, small volume, high sensitivity, potable and so on, and is convenient for use in field. The output pulse of this instrument may directly consist with CMOS or TTL logic level. This instrument was mainly used for count measurement, for example, for high sensitive 3 He neutron detector, meanwhile also may used for other heavy ion detectors, the highest counting rate can reach 10 6 /s. (authors)

High-field, high-density tokamak power reactor

International Nuclear Information System (INIS)

Cohn, D.R.; Cook, D.L.; Hay, R.D.; Kaplan, D.; Kreischer, K.; Lidskii, L.M.; Stephany, W.; Williams, J.E.C.; Jassby, D.L.; Okabayashi, M.

1977-11-01

A conceptual design of a compact (R 0 = 6.0 m) high power density (average P/sub f/ = 7.7 MW/m 3 ) tokamak demonstration power reactor has been developed. High magnetic field (B/sub t/ = 7.4 T) and moderate elongation (b/a = 1.6) permit operation at the high density (n(0) approximately 5 x 10 14 cm -3 ) needed for ignition in a relatively small plasma, with a spatially-averaged toroidal beta of only 4%. A unique design for the Nb 3 Sn toroidal-field magnet system reduces the stress in the high-field trunk region, and allows modularization for simpler disassembly. The modest value of toroidal beta permits a simple, modularized plasma-shaping coil system, located inside the TF coil trunk. Heating of the dense central plasma is attained by the use of ripple-assisted injection of 120-keV D 0 beams. The ripple-coil system also affords dynamic control of the plasma temperature during the burn period. A FLIBE-lithium blanket is designed especially for high-power-density operation in a high-field environment, and gives an overall tritium breeding ratio of 1.05 in the slowly pumped lithium

Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

Energy Technology Data Exchange (ETDEWEB)

Savic, M.S.

1986-07-01

The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

[Shunt and short circuit].

Science.gov (United States)

Rangel-Abundis, Alberto

2006-01-01

Shunt and short circuit are antonyms. In French, the term shunt has been adopted to denote the alternative pathway of blood flow. However, in French, as well as in Spanish, the word short circuit (court-circuit and cortocircuito) is synonymous with shunt, giving rise to a linguistic and scientific inconsistency. Scientific because shunt and short circuit made reference to a phenomenon that occurs in the field of the physics. Because shunt and short circuit are antonyms, it is necessary to clarify that shunt is an alternative pathway of flow from a net of high resistance to a net of low resistance, maintaining the stream. Short circuit is the interruption of the flow, because a high resistance impeaches the flood. This concept is applied to electrical and cardiovascular physiology, as well as to the metabolic pathways.

High density dispersion fuel

International Nuclear Information System (INIS)

Hofman, G.L.

1996-01-01

A fuel development campaign that results in an aluminum plate-type fuel of unlimited LEU burnup capability with an uranium loading of 9 grams per cm 3 of meat should be considered an unqualified success. The current worldwide approved and accepted highest loading is 4.8 g cm -3 with U 3 Si 2 as fuel. High-density uranium compounds offer no real density advantage over U 3 Si 2 and have less desirable fabrication and performance characteristics as well. Of the higher-density compounds, U 3 Si has approximately a 30% higher uranium density but the density of the U 6 X compounds would yield the factor 1.5 needed to achieve 9 g cm -3 uranium loading. Unfortunately, irradiation tests proved these peritectic compounds have poor swelling behavior. It is for this reason that the authors are turning to uranium alloys. The reason pure uranium was not seriously considered as a dispersion fuel is mainly due to its high rate of growth and swelling at low temperatures. This problem was solved at least for relatively low burnup application in non-dispersion fuel elements with small additions of Si, Fe, and Al. This so called adjusted uranium has nearly the same density as pure α-uranium and it seems prudent to reconsider this alloy as a dispersant. Further modifications of uranium metal to achieve higher burnup swelling stability involve stabilization of the cubic γ phase at low temperatures where normally α phase exists. Several low neutron capture cross section elements such as Zr, Nb, Ti and Mo accomplish this in various degrees. The challenge is to produce a suitable form of fuel powder and develop a plate fabrication procedure, as well as obtain high burnup capability through irradiation testing

High regression rate, high density hybrid fuels, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR program will investigate high energy density novel nanofuels combined with high density binders for use with an N2O oxidizer. Terves has developed...

Tailored benzoxazines as novel resin systems for printed circuit boards in high temperature e-mobility applications

International Nuclear Information System (INIS)

Troeger, K.; Darka, R. Khanpour; Neumeyer, T.; Altstaedt, V.

2014-01-01

This study focuses on the development of Bisphenol-F-benzoxazine resins blended with different ratios of a trifunctional epoxy resin suitable as matrix for substrates for high temperature printed circuit board (HT-PCB) applications. With the benzoxazine blends glass transition temperatures of more than 190 °C could be achieved in combination with a coefficient of thermal expansion in thickness direction (z-CTE) of less than 60 ppm/K without adding any fillers. This shows the high potential of the benzoxazine-epoxy blend systems as substrate materials for HT-PCBs. To understand the thermal behavior of the different formulations, the apparent crosslink density was calculated based on data from Dynamic Mechanical Analysis. Laminates in laboratory scale were prepared and characterized to demonstrate the transformation of the neat resin properties into real electronic substrate properties. The produced laminates exhibit a z-CTE below 40 ppm/K

Tailored benzoxazines as novel resin systems for printed circuit boards in high temperature e-mobility applications

Energy Technology Data Exchange (ETDEWEB)

Troeger, K., E-mail: altstaedt@uni-bayreuth.de; Darka, R. Khanpour, E-mail: altstaedt@uni-bayreuth.de; Neumeyer, T., E-mail: altstaedt@uni-bayreuth.de; Altstaedt, V., E-mail: altstaedt@uni-bayreuth.de [Polymer Engineering, University of Bayreuth, Germany and Polymer Engineering, Universitaetsstrasse 30, 95447 Bayreuth (Germany)

2014-05-15

This study focuses on the development of Bisphenol-F-benzoxazine resins blended with different ratios of a trifunctional epoxy resin suitable as matrix for substrates for high temperature printed circuit board (HT-PCB) applications. With the benzoxazine blends glass transition temperatures of more than 190 °C could be achieved in combination with a coefficient of thermal expansion in thickness direction (z-CTE) of less than 60 ppm/K without adding any fillers. This shows the high potential of the benzoxazine-epoxy blend systems as substrate materials for HT-PCBs. To understand the thermal behavior of the different formulations, the apparent crosslink density was calculated based on data from Dynamic Mechanical Analysis. Laminates in laboratory scale were prepared and characterized to demonstrate the transformation of the neat resin properties into real electronic substrate properties. The produced laminates exhibit a z-CTE below 40 ppm/K.

Nanofluidic crystal: a facile, high-efficiency and high-power-density scaling up scheme for energy harvesting based on nanofluidic reverse electrodialysis

International Nuclear Information System (INIS)

Ouyang Wei; Wang Wei; Zhang Haixia; Wu Wengang; Li Zhihong

2013-01-01

The great advances in nanotechnology call for advances in miniaturized power sources for micro/nano-scale systems. Nanofluidic channels have received great attention as promising high-power-density substitutes for ion exchange membranes for use in energy harvesting from ambient ionic concentration gradient, namely reverse electrodialysis. This paper proposes the nanofluidic crystal (NFC), of packed nanoparticles in micro-meter-sized confined space, as a facile, high-efficiency and high-power-density scaling-up scheme for energy harvesting by nanofluidic reverse electrodialysis (NRED). Obtained from the self-assembly of nanoparticles in a micropore, the NFC forms an ion-selective network with enormous nanochannels due to electrical double-layer overlap in the nanoparticle interstices. As a proof-of-concept demonstration, a maximum efficiency of 42.3 ± 1.84%, a maximum power density of 2.82 ± 0.22 W m −2 , and a maximum output power of 1.17 ± 0.09 nW/unit (nearly three orders of magnitude of amplification compared to other NREDs) were achieved in our prototype cell, which was prepared within 30 min. The current NFC-based prototype cell can be parallelized and cascaded to achieve the desired output power and open circuit voltage. This NFC-based scaling-up scheme for energy harvesting based on NRED is promising for the building of self-powered micro/nano-scale systems. (paper)

Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

Science.gov (United States)

Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)

1991-01-01

Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.

Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

Science.gov (United States)

Nam, SungWoo; Jiang, Xiaocheng; Xiong, Qihua; Ham, Donhee; Lieber, Charles M

2009-12-15

Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) field-effect transistors (FETs). The DC voltage output (V(out)) versus input (V(in)) response of vertically interconnected CMOS inverters showed sharp switching at close to the ideal value of one-half the supply voltage and, moreover, exhibited substantial DC gain of approximately 45. The gain and the rail-to-rail output switching are consistent with the large noise margin and minimal static power consumption of CMOS. Vertically interconnected, three-stage CMOS ring oscillators were also fabricated by using layer-1 InAs NW n-FETs and layer-2 Ge/Si NW p-FETs. Significantly, measurements of these circuits demonstrated stable, self-sustained oscillations with a maximum frequency of 108 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanoscale materials. These results highlight the flexibility of bottom-up assembly of distinct nanoscale materials and suggest substantial promise for 3D integrated circuits.

Rational Design of High-Performance Wide-Bandgap (≈2 eV) Polymer Semiconductors as Electron Donors in Organic Photovoltaics Exhibiting High Open Circuit Voltages (≈1 V).

Science.gov (United States)

Chochos, Christos L; Katsouras, Athanasios; Gasparini, Nicola; Koulogiannis, Chrysanthos; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-01-01

Systematic optimization of the chemical structure of wide-bandgap (≈2.0 eV) "donor-acceptor" copolymers consisting of indacenodithiophene or indacenodithieno[3,2-b]thiophene as the electron-rich unit and thieno[3,4-c]pyrrole-4,6-dione as the electron-deficient moiety in terms of alkyl side chain engineering and distance of the electron-rich and electron-deficient monomers within the repeat unit of the polymer chain results in high-performance electron donor materials for organic photovoltaics. Specifically, preliminary results demonstrate extremely high open circuit voltages (V oc s) of ≈1.0 V, reasonable short circuit current density (J sc ) of around 11 mA cm -2 , and moderate fill factors resulting in efficiencies close to 6%. All the devices are fabricated in an inverted architecture with the photoactive layer processed by doctor blade equipment, showing the compatibility with roll-to-roll large-scale manufacturing processes. From the correlation of the chemical structure-optoelectronic properties-photovoltaic performance, a rational guide toward further optimization of the chemical structure in this family of copolymers, has been achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Integrated-circuit microwave detector based on granular high-Tc thin films. [Y-Ba-Cu-O

Energy Technology Data Exchange (ETDEWEB)

Drobinin, A.V.; Lutovinov, V.S.; Starostenko, I.V. (Moscow Inst. of Radioengineering, Electronics and Automation, (MIREA), Moscow (USSR))

1991-12-01

A highly sensitive integrative-circuit microwave detector based on granular High-Tc film has been designed. All matching circuits and High-Tc microbridge are located on the same substrate. The voltage responsivity 10{sup 3} V/W has been found at 65 K and frequency 5 GHz. Different modes of microwave detection have been observed: bolometric response near Tc in high-quality films, rectification mode caused by an array of weak links dominating in low-quality films, detection caused by nonlinear magnetic flux motion. (orig.).

[Design of High Frequency Signal Detecting Circuit of Human Body Impedance Used for Ultrashort Wave Diathermy Apparatus].

Science.gov (United States)

Fan, Xu; Wang, Yunguang; Cheng, Haiping; Chong, Xiaochen

2016-02-01

The present circuit was designed to apply to human tissue impedance tuning and matching device in ultra-short wave treatment equipment. In order to judge if the optimum status of circuit parameter between energy emitter circuit and accepter circuit is in well syntony, we designed a high frequency envelope detect circuit to coordinate with automatic adjust device of accepter circuit, which would achieve the function of human tissue impedance matching and tuning. Using the sampling coil to receive the signal of amplitude-modulated wave, we compared the voltage signal of envelope detect circuit with electric current of energy emitter circuit. The result of experimental study was that the signal, which was transformed by the envelope detect circuit, was stable and could be recognized by low speed Analog to Digital Converter (ADC) and was proportional to the electric current signal of energy emitter circuit. It could be concluded that the voltage, transformed by envelope detect circuit can mirror the real circuit state of syntony and realize the function of human tissue impedance collecting.

Design and validation of a high-voltage levitation circuit for electrostatic accelerometers

Energy Technology Data Exchange (ETDEWEB)

Li, G.; Wu, S. C.; Zhou, Z. B.; Bai, Y. Z.; Hu, M.; Luo, J. [MOE Key Laboratory of Fundamental Physical Quantities Measurements, School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

2013-12-15

A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 μm, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10{sup −8} m/s{sup 2}/Hz{sup 1/2} at 0.1 Hz, while the high-voltage coupling noise is one-order of magnitude lower.

A novel on-chip high to low voltage power conversion circuit

International Nuclear Information System (INIS)

Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong; Lai Xinquan; Ye Qiang; Li Xianrui

2009-01-01

A novel power supply transform technique for high voltage IC based on the TSMC 0.6 μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm 2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

A novel on-chip high to low voltage power conversion circuit

Energy Technology Data Exchange (ETDEWEB)

Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong [Institute of Mechano-electronic Engineering, Xidian University, Xi' an 71007 (China); Lai Xinquan; Ye Qiang; Li Xianrui, E-mail: whui94@126.co [Institute of Electronic CAD, Xidian University, Xi' an 710071 (China)

2009-03-15

A novel power supply transform technique for high voltage IC based on the TSMC 0.6 mum BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm{sup 2} area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

Science.gov (United States)

Shahrjerdi, Davood; Bedell, Stephen W

2013-01-09

In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

Science.gov (United States)

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-02-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

Science.gov (United States)

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-02-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

DEFF Research Database (Denmark)

Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

2017-01-01

is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...

Sequential circuit design for radiation hardened multiple voltage integrated circuits

Science.gov (United States)

Clark, Lawrence T [Phoenix, AZ; McIver, III, John K.

2009-11-24

The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection

Science.gov (United States)

Smrity, Manu; Dhariwal, S. R.

2018-05-01

The paper deals with the basic recombination processes at the dangling bond and the band tail states at various levels of injection, expressed in terms of short-circuit current density and their role in the behavior of amorphous solar cells. As the level of injection increases the fill factor decreases whereas the open circuit voltage increases very slowly, showing a saturation tendency. Calculations have been done for two values of tail state densities and shows that with an increase in tail state densities both, the fill factor and open circuit voltage decreases, results an overall degradation of the solar cell.

A novel high voltage start up circuit for an integrated switched mode power supply

Energy Technology Data Exchange (ETDEWEB)

Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2010-09-15

A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

Recovery Act: High-Temperature Circuit Boards for use in Geothermal Well Monitoring Applications

Energy Technology Data Exchange (ETDEWEB)

Hooker, Matthew [Composite Tehcnology Development, Inc., Lafayette, CO (United States); Fabian, Paul [Composite Tehcnology Development, Inc., Lafayette, CO (United States)

2013-05-01

The U.S. Department of Energy is leading the development of alternative energy sources that will ensure the long-term energy independence of our nation. One of the key renewable resources currently being advanced is geothermal energy. To tap into the large potential offered by generating power from the heat of the earth, and for geothermal energy to be more widely used, it will be necessary to drill deeper wells to reach the hot, dry rock located up to 10 km beneath the earth’s surface. In this instance, water will be introduced into the well to create a geothermal reservoir. A geothermal well produced in this manner is referred to as an enhanced geothermal system (EGS). EGS reservoirs are typically at depths of 3 to 10 km, and the temperatures at these depths have become a limiting factor in the application of existing downhole technologies. These high temperatures are especially problematic for electronic systems such as downhole data-logging tools, which are used to map and characterize the fractures and high-permeability regions in underground formations. Information provided by these tools is assessed so that underground formations capable of providing geothermal energy can be identified, and the subsequent drilling operations can be accurately directed to those locations. The mapping of geothermal resources involves the design and fabrication of sensor packages, including the electronic control modules, to quantify downhole conditions (300°C temperature, high pressure, seismic activity, etc.). Because of the extreme depths at which these measurements are performed, it is most desirable to perform the sensor signal processing downhole and then transmit the information to the surface. This approach necessitates the use of high-temperature electronics that can operate in the downhole environment. Downhole signal processing in EGS wells will require the development and demonstration of circuit boards that can withstand the elevated temperatures found at these

The study of amplification circuit characteristics of photocurrent signal of high-energy industrial CT detection system

International Nuclear Information System (INIS)

Wang Jue; Tan Hui; Wang Xin; Chen Jiaoze

2011-01-01

According to characteristics of the Photocurrent signal from detection system of high energy industrial CT, sets up the integral amplifier circuit test platform based ACF2101, through the study of this amplifier circuit, a integral capacitor using air as dielectric is proposed in order to get high-gain. After experimental tests, results are good. (authors)

Gap formation processes in a high-density plasma opening switch

International Nuclear Information System (INIS)

Grossmann, J.M.; Swanekamp, S.B.; Ottinger, P.F.; Commisso, R.J.; Hinshelwood, D.D.; Weber, B.V.

1995-01-01

A gap opening process in plasma opening switches (POS) is examined with the aid of numerical simulations. In these simulations, a high density (n e =10 14 --5x10 15 cm -3 ) uniform plasma initially bridges a small section of the coaxial transmission line of an inductive energy storage generator. A short section of vacuum transmission line connects the POS to a short circuit load. The results presented here extend previous simulations in the n e =10 12 --10 13 cm -3 density regime. The simulations show that a two-dimensional (2-D) sheath forms in the plasma near a cathode. This sheath is positively charged, and electrostatic sheath potentials that are large compared to the anode--cathode voltage develop. Initially, the 2-D sheath is located at the generator edge of the plasma. As ions are accelerated out of the sheath, it retains its original 2-D structure, but migrates axially toward the load creating a magnetically insulated gap in its wake. When the sheath reaches the load edge of the POS, the POS stops conducting current and the load current increases rapidly. At the end of the conduction phase a gap exists in the POS whose size is determined by the radial dimensions of the 2-D sheath. Simulations at various plasma densities and current levels show that the radial size of the gap scales roughly as B/n e , where B is the magnetic field. The results of this work are discussed in the context of long-conduction-time POS physics, but exhibit the same physical gap formation mechanisms as earlier lower density simulations more relevant to short-conduction-time POS. copyright 1995 American Institute of Physics

Thermionic integrated circuits: electronics for hostile environments

International Nuclear Information System (INIS)

Lynn, D.K.; McCormick, J.B.; MacRoberts, M.D.J.; Wilde, D.K.; Dooley, G.R.; Brown, D.R.

1985-01-01

Thermionic integrated circuits combine vacuum tube technology with integrated circuit techniques to form integrated vacuum triode circuits. These circuits are capable of extended operation in both high-temperature and high-radiation environments

Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

Science.gov (United States)

Leonard, Regis F.; Bhasin, Kul B.

Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure. (For individual items see A93-25777 to A93-25814)

Magnetization of High Density Hadronic Fluid

DEFF Research Database (Denmark)

Bohr, Henrik; Providencia, Constanca; da Providencia, João

2012-01-01

In the present paper the magnetization of a high density relativistic fluid of elementary particles is studied. At very high densities, such as may be found in the interior of a neutron star, when the external magnetic field is gradually increased, the energy of the normal phase of the fluid...... in the particle fluid. For nuclear densities above 2 to 3 rho(0), where rho(0) is the equilibrium nuclear density, the resulting magnetic field turns out to be rather huge, of the order of 10(17) Gauss....

Comparison of modified driver circuit and capacitor-transfer circuit in longitudinally excited N2 laser.

Science.gov (United States)

Uno, Kazuyuki; Akitsu, Tetsuya; Nakamura, Kenshi; Jitsuno, Takahisa

2013-04-01

We developed a modified driver circuit composed of a capacitance and a spark gap, called a direct-drive circuit, for a longitudinally excited gas laser. The direct-drive circuit uses a large discharge impedance caused by a long discharge length of the longitudinal excitation scheme and eliminates the buffer capacitance used in the traditional capacitor-transfer circuit. We compared the direct-drive circuit and the capacitor-transfer circuit in a longitudinally excited N2 laser (wavelength: 337 nm). Producing high output energy with the capacitor-transfer circuit requires a large storage capacitance and a discharge tube with optimum dimensions (an inner diameter of 4 mm and a length of 10 cm in this work); in contrast, the direct-drive circuit requires a high breakdown voltage, achieved with a small storage capacitance and a large discharge tube. Additionally, for the same input energy of 792 mJ, the maximum output energy of the capacitor-transfer circuit was 174.2 μJ, and that of the direct-drive circuit was 344.7 μJ.

Hybrid circuit prototypes for the CMS Tracker upgrade front-end electronics

International Nuclear Information System (INIS)

Blanchot, G; Honma, A; Kovacs, M; Braga, D; Raymond, M

2013-01-01

New high-density interconnect hybrid circuits are under development for the CMS tracker modules at the HL-LHC. These hybrids will provide module connectivity between flip-chip front-end ASICs, strip sensors and a service board for the data transmission and powering. Rigid organic-based substrate prototypes and also a flexible hybrid design have been built, containing up to eight front-end flip chip ASICs. A description of the function of the hybrid circuit in the tracker, the first prototype designs, results of some electrical and mechanical properties from the prototypes, and examples of the integration of the hybrids into detector modules are presented

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

Science.gov (United States)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Modelling the short-circuit current of polymer bulk heterojunction solar cells

International Nuclear Information System (INIS)

Geens, Wim; Martens, Tom; Poortmans, Jef; Aernouts, Tom; Manca, Jean; Lutsen, Laurence; Heremans, Paul; Borghs, Staf; Mertens, Robert; Vanderzande, Dirk

2004-01-01

An analytical model has been developed to estimate the short-circuit current density of conjugated polymer/fullerene bulk heterojunction solar cells. The model takes into account the solvent-dependent molecular morphology of the donor/acceptor blend, which was revealed by transmission electron microscopy. Field-effect transistors based on single and composite organic layers were fabricated to determine values for the charge carrier mobilities of such films. These values served as input parameters of the model. It is shown that the difference in short-circuit current density that was measured between toluene-cast and chlorobenzene-cast conjugated polymer/fullerene photovoltaic cells (Appl. Phys. Lett. 78 (2001) 841) could be very well simulated with the model. Moreover, the calculations illustrate how increasing the hole and electron mobilities in the photoactive blend can improve the overall short-circuit current density of the solar cell

Experimental study on working characteristics of density lock

International Nuclear Information System (INIS)

Sun Furong; Yan Changqi; Gu Haifeng

2011-01-01

The working principle of density lock was introduced in this paper, and the experimental loop was built so that researches on working performance of density lock in the system were done at steady-state operation and pump trip conditions. The results show that at steady-state operation conditions, density lock can keep close in a long run, which will separate passive residual heat removal circuit from primary circuit. As a result, passive residual heat removal circuit is in the non-operating conditions, which dose not influence normal operation of reactors. At the pump trip conditions, density lock can be automatically opened quickly, which will make primary and passive residual heat removal system communicated. The natural circulation is well established in the two systems, and is enough to ensure removal of residual heat. (authors)

High-Voltage MOSFET Switching Circuit

Science.gov (United States)

Jensen, Kenneth A.

1995-01-01

Circuit reliably switches power at supply potential of minus 1,500 V, with controlled frequency and duty cycle. Used in argon-plasma ion-bombardment equipment for texturing copper electrodes, as described in "Texturing Copper To Reduce Secondary Emission of Electrons" (LEW-15898), also adapted to use in powering gaseous flash lamps and stroboscopes.

Direct readout flux locked loop circuit with automatic tuning of bias current and bias flux for high-Tc SQUID

International Nuclear Information System (INIS)

Hirano, T.; Nagaishi, T.; Itozaki, H.

1999-01-01

Measurement of high-frequency magnetic signals has been required from some SQUID applications. We fabricated a high-T c SQUID magnetic sensor system that can treat high-frequency signals. This system is composed of a SQUID, a preamplifier circuit, a flux locked loop (FLL) circuit with I/O and a personal computer and a PC card. We used the FLL circuit with no modulation to treat the high-frequency signal and to simplify the circuit. This system can treat a signal from dc to 1 MHz. All the sequence from tuning the SQUID to data acquisition can be done by a personal computer. This system successfully realized easy operation of SQUID measurement. (author)

A high resolution large dynamic range TDC circuit implementation

International Nuclear Information System (INIS)

Lei Wuhu; Liu Songqiu; Ye Weiguo; Han Hui; Li Pengyu

2003-01-01

Time measurement technology is usually used in nuclear experimentation. There are many methods of time measurement. The implementation method of Time to Digital Conversion (TDC) by means of electronic is a classical technology. The range and resolution of TDC is different according with different usage. A wide range and high resolution TDC circuit, including its theory and implementation way, is introduced in this paper. The test result is also given. (authors)

A high resolution large dynamic range TDC circuit implementation

International Nuclear Information System (INIS)

Lei Wuhu; Liu Songqiu; Li Pengyu; Han Hui; Ye Yanlin

2005-01-01

Time measurement technology is usually used in nuclear experimentation. There are many methods of time measurement. The implementation method of Time to Digital Conversion (TDC) by means of electronics is a classical technology. The range and resolution of TDC is different according with different usage. A wide range and high resolution TDC circuit, including its theory and implementation way, is introduced in this paper. The test result is also given. (authors)

Josephson phase qubit circuit for the evaluation of advanced tunnel barrier materials

Energy Technology Data Exchange (ETDEWEB)

Kline, Jeffrey S; Oh, Seongshik; Pappas, David P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Wang Haohua; Martinis, John M [Department of Physics, University of California, Santa Barbara, CA 93106 (United States)], E-mail: klinej@nist.gov

2009-01-15

We have found that crystalline Josephson junctions have problems with the control of critical current density that decrease the circuit yield. We present a superconducting quantum bit circuit designed to accommodate a factor of five variation in critical current density from one fabrication run to the next. The new design enables the evaluation of advanced tunnel barrier materials for superconducting quantum bits. Using this circuit design, we compare the performance of Josephson phase qubits fabricated with MgO and Al{sub 2}O{sub 3} advanced crystalline tunnel barriers to AlO{sub x} amorphous tunnel barrier qubits.

Silicon photonic transceiver circuit for high-speed polarization-based discrete variable quantum key distribution.

Science.gov (United States)

Cai, Hong; Long, Christopher M; DeRose, Christopher T; Boynton, Nicholas; Urayama, Junji; Camacho, Ryan; Pomerene, Andrew; Starbuck, Andrew L; Trotter, Douglas C; Davids, Paul S; Lentine, Anthony L

2017-05-29

We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.

Stitching Codeable Circuits: High School Students' Learning About Circuitry and Coding with Electronic Textiles

Science.gov (United States)

Litts, Breanne K.; Kafai, Yasmin B.; Lui, Debora A.; Walker, Justice T.; Widman, Sari A.

2017-10-01

Learning about circuitry by connecting a battery, light bulb, and wires is a common activity in many science classrooms. In this paper, we expand students' learning about circuitry with electronic textiles, which use conductive thread instead of wires and sewable LEDs instead of lightbulbs, by integrating programming sensor inputs and light outputs and examining how the two domains interact. We implemented an electronic textiles unit with 23 high school students ages 16-17 years who learned how to craft and code circuits with the LilyPad Arduino, an electronic textile construction kit. Our analyses not only confirm significant increases in students' understanding of functional circuits but also showcase students' ability in designing and remixing program code for controlling circuits. In our discussion, we address opportunities and challenges of introducing codeable circuit design for integrating maker activities that include engineering and computing into classrooms.

WPG-Controlled Quantum BDD Circuits with BDD Architecture on GaAs-Based Hexagonal Nanowire Network Structure

Directory of Open Access Journals (Sweden)

Hong-Quan ZHao

2012-01-01

Full Text Available One-dimensional nanowire quantum devices and basic quantum logic AND and OR unit on hexagonal nanowire units controlled by wrap gate (WPG were designed and fabricated on GaAs-based one-dimensional electron gas (1-DEG regular nanowire network with hexagonal topology. These basic quantum logic units worked correctly at 35 K, and clear quantum conductance was achieved on the node device, logic AND circuit unit, and logic OR circuit unit. Binary-decision-diagram- (BDD- based arithmetic logic unit (ALU is realized on GaAs-based regular nanowire network with hexagonal topology by the same fabrication method as that of the quantum devices and basic circuits. This BDD-based ALU circuit worked correctly at room temperature. Since these quantum devices and circuits are basic units of the BDD ALU combinational circuit, the possibility of integrating these quantum devices and basic quantum circuits into the BDD-based quantum circuit with more complicated structures was discussed. We are prospecting the realization of quantum BDD combinational circuitries with very small of energy consumption and very high density of integration.

Non-Gaussianity in a quasiclassical electronic circuit

Science.gov (United States)

Suzuki, Takafumi J.; Hayakawa, Hisao

2017-05-01

We study the non-Gaussian dynamics of a quasiclassical electronic circuit coupled to a mesoscopic conductor. Non-Gaussian noise accompanying the nonequilibrium transport through the conductor significantly modifies the stationary probability density function (PDF) of the flux in the dissipative circuit. We incorporate weak quantum fluctuation of the dissipative LC circuit with a stochastic method and evaluate the quantum correction of the stationary PDF. Furthermore, an inverse formula to infer the statistical properties of the non-Gaussian noise from the stationary PDF is derived in the classical-quantum crossover regime. The quantum correction is indispensable to correctly estimate the microscopic transfer events in the QPC with the quasiclassical inverse formula.

Fast protection circuit for 1 MW Klystron based RF system of Low Energy High Intensity Proton Accelerator (LEHIPA)

International Nuclear Information System (INIS)

Shrotriya, Sandip; Shiju, A.; Patel, N.R.; Pande, Manjiri; Singh, P.

2014-01-01

This paper describes the details of a hardwired protection circuit designed and developed for 1 MW Klystron based Radio Frequency (RF) System. The hardwired protection circuit protects the klystron from fault conditions occurring in high power DC supplies, other bias supplies and inside the klystron itself. Fast response of the order of 1-2 microseconds is necessary in case of critical signals for the protection of such a high power system. The system needs to handle around 10 critical signals comprising of optical signals and different digital signals. In case of malfunction in the existing controller based interlock and protection system, klystron will be protected by this hardwired protection circuit. The hardwired circuit will provide redundant protection and protect the klystron from damage. This circuit and controller based protection system are operating in parallel. This paper describes details of a purely hardwired protection circuit developed for critical signals for achieving reliability and faster response time requirements of the RF system. (author)

Heterostructure-based high-speed/high-frequency electronic circuit applications

Science.gov (United States)

Zampardi, P. J.; Runge, K.; Pierson, R. L.; Higgins, J. A.; Yu, R.; McDermott, B. T.; Pan, N.

1999-08-01

With the growth of wireless and lightwave technologies, heterostructure electronic devices are commodity items in the commercial marketplace [Browne J. Power-amplifier MMICs drive commercial circuits. Microwaves & RF, 1998. p. 116-24.]. In particular, HBTs are an attractive device for handset power amplifiers at 900 MHz and 1.9 GHz for CDMA applications [Lum E. GaAs technology rides the wireless wave. Proceedings of the 1997 GaAs IC Symposium, 1997. p. 11-13; "Rockwell Ramps Up". Compound Semiconductor, May/June 1997.]. At higher frequencies, both HBTs and p-HEMTs are expected to dominate the marketplace. For high-speed lightwave circuit applications, heterostructure based products on the market for OC-48 (2.5 Gb/s) and OC-192 (10 Gb/s) are emerging [http://www.nb.rockwell.com/platforms/network_access/nahome.html#5.; http://www.nortel.com/technology/opto/receivers/ptav2.html.]. Chips that operate at 40 Gb/ have been demonstrated in a number of research laboratories [Zampardi PJ, Pierson RL, Runge K, Yu R, Beccue SM, Yu J, Wang KC. hybrid digital/microwave HBTs for >30 Gb/s optical communications. IEDM Technical Digest, 1995. p. 803-6; Swahn T, Lewin T, Mokhtari M, Tenhunen H, Walden R, Stanchina W. 40 Gb/s 3 Volt InP HBT ICs for a fiber optic demonstrator system. Proceedings of the 1996 GaAs IC Symposium, 1996. p. 125-8; Suzuki H, Watanabe K, Ishikawa K, Masuda H, Ouchi K, Tanoue T, Takeyari R. InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems. Proceedings of the 1997 GaAs IC Symposium, 1997. p. 215-8]. In addition to these two markets, another area where heterostructure devices are having significant impact is for data conversion [Walden RH. Analog-to digital convertor technology comparison. Proceedings of the 1994 GaAs IC Symposium, 1994. p. 217-9; Poulton K, Knudsen K, Corcoran J, Wang KC, Nubling RB, Chang M-CF, Asbeck PM, Huang RT. A 6-b, 4 GSa/s GaAs HBT ADC. IEEE J Solid-State Circuits 1995;30:1109-18; Nary K, Nubling R, Beccue S, Colleran W

High-T /SUB c/ Superconducting integrated circuit: a dc SQUID with input coil

International Nuclear Information System (INIS)

Di Iorio, M.S.; Beasley, M.R.

1985-01-01

We have fabricated a high transition temperature superconducting integrated circuit consisting of a dc SQUID and an input coupling coil. The purpose is to ascertain the generic problems associated with constructing a high-T /SUB c/ circuit as well as to fabricate a high performance dc SQUID. The superconductor used for both the SQUID and the input coil is Nb 3 Sn which must be deposited at 800 0 C. Importantly, the insulator separating SQUID and input coil maintains its integrity at this elevated temperature. A hole in the insulator permits contact to the innermost winding of the coil. This contact has been achieved without significant degradation of the superconductivity. Consequently, the device operates over a wide temperature range, from below 4.2 K to near T /SUB c/

Electrical circuit modeling of reversed field pinches

International Nuclear Information System (INIS)

Sprott, J.C.

1988-02-01

Equations are proposed to describe the radial variation of the magnetic field and current density in a circular, cylindrical RFP. These equations are used to derive the electrical circuit parameters (inductance, resistance, and coupling coefficient) for an RFP discharge. The circuit parameters are used to evaluate the flux and energy consumption for various startup modes and for steady-state operation using oscillating field current drive. The results are applied to the MST device. 32 refs., 14 figs., 1 tab

Simulation, measurement, and emulation of photovoltaic modules using high frequency and high power density power electronic circuits

Science.gov (United States)

Erkaya, Yunus

system variables so that any PV module can be emulated as the design requires. A non-synchronous buck converter is proposed for the emulation of a single, high-power PV module using traditional silicon devices. With the proof-of-concept working and improvements in efficiency, power density and steady-state errors made, dynamic tests were performed using an inverter connected to the PV emulator. In order to improve the dynamic characteristics, a synchronous buck converter topology is proposed along with the use of advanced GaNFET devices which resulted in very high power efficiency and improved dynamic response characteristics when emulating PV modules.

Photonic circuit for high order USB and LSB separation for remote heterodyning: analysis and simulation.

Science.gov (United States)

Hasan, Mehedi; Hall, Trevor J

2015-09-21

A novel photonic integrated circuit is proposed that, using an RF source, generates at its output ports the same magnitude but opposite sign high order single optical side bands of a suppressed optical carrier. A single stage parallel Mach-Zehnder Modulator (MZM) and a two-stage series parallel MZM architecture are described and their relative merits discussed. A transfer matrix method is used to describe the operation of the circuits. The theoretical analysis is validated by computer simulation. As an illustration of a prospective application, it is shown how the circuit may be used as a key element of an optical transmission system to transport radio signals over fibre for wireless access; generating remotely a mm-wave carrier modulated by digital IQ data. A detailed calculation of symbol error rate is presented to characterise the system performance. The circuit may be fabricated in any integration platform offering a suitable phase modulator circuit element such as LiNbO(3), Silicon, and III-V or hybrid technology.

Lecture note on digital circuit design for high energy physics experiment

International Nuclear Information System (INIS)

Ikeda, Hirokazu.

1993-08-01

This lecture gives basic ideas and practice of the digital circuit design for high energy physics experiment. The lecture has a special emphasis on a simulation study with a hardware description language. The student could complete a design of a simple RISC based computer after finishing this course. (author)

Development of alternating current circuit simulation as essential learning support for senior high school student

Directory of Open Access Journals (Sweden)

Mayang Dwinta Trisniarti

2017-02-01

Full Text Available In this study an interactive simulation of Alternating Current circuit was developed by using Articulate Storyline 2 and Adobe Flash CS 6 programs. The aim of this study was providing a computer interactive simulation as essential learning support for Senior High School student. One of the most important features of AC circuit simulation is the easily and continuous material to attain learning objectivity and interest toward students. This AC circuit simulation is built to create real-time sine wave graphs so that student could compare the result if the variable were changed gradually. The validation is held through several experts and reviewers due to get obtained through questionnaires. The results of this research could be concluded that AC circuit simulation for Senior High School Physics have good criteria based on user interface, i.e. 50% of respondents rated enough, 16.67% of respondents rated good, and 33.33% of respondents rated very good. Based on maintenance, i.e. 50% of respondents rated enough, 20% of respondents rated good, and 30% of respondents rated very good. Then based on usability, i.e. 6.67% of respondents rated good and 93.33% rated very good. Furthermore, based on understanding, i.e. 6.67% of respondents rated enough, 30% of respondents rated good, and 73.33% of respondents rated very good. The use of AC circuit simulation could improve the senior high school students’ cognitive ability on the Physics’s course, i.e. with the average score increased from 68.67 to 80.5 based on 30 students.

Density measurements of small amounts of high-density solids by a floatation method

International Nuclear Information System (INIS)

Akabori, Mitsuo; Shiba, Koreyuki

1984-09-01

A floatation method for determining the density of small amounts of high-density solids is described. The use of a float combined with an appropriate floatation liquid allows us to measure the density of high-density substances in small amounts. Using the sample of 0.1 g in weight, the floatation liquid of 3.0 g cm -3 in density and the float of 1.5 g cm -3 in apparent density, the sample densities of 5, 10 and 20 g cm -3 are determined to an accuracy better than +-0.002, +-0.01 and +-0.05 g cm -3 , respectively that correspond to about +-1 x 10 -5 cm 3 in volume. By means of appropriate degassing treatments, the densities of (Th,U)O 2 pellets of --0.1 g in weight and --9.55 g cm -3 in density were determined with an accuracy better than +-0.05 %. (author)

The research of digital circuit system for high accuracy CCD of portable Raman spectrometer

Science.gov (United States)

Yin, Yu; Cui, Yongsheng; Zhang, Xiuda; Yan, Huimin

2013-08-01

The Raman spectrum technology is widely used for it can identify various types of molecular structure and material. The portable Raman spectrometer has become a hot direction of the spectrometer development nowadays for its convenience in handheld operation and real-time detection which is superior to traditional Raman spectrometer with heavy weight and bulky size. But there is still a gap for its measurement sensitivity between portable and traditional devices. However, portable Raman Spectrometer with Shell-Isolated Nanoparticle-Enhanced Raman Spectroscopy (SHINERS) technology can enhance the Raman signal significantly by several orders of magnitude, giving consideration in both measurement sensitivity and mobility. This paper proposed a design and implementation of driver and digital circuit for high accuracy CCD sensor, which is core part of portable spectrometer. The main target of the whole design is to reduce the dark current generation rate and increase signal sensitivity during the long integration time, and in the weak signal environment. In this case, we use back-thinned CCD image sensor from Hamamatsu Corporation with high sensitivity, low noise and large dynamic range. In order to maximize this CCD sensor's performance and minimize the whole size of the device simultaneously to achieve the project indicators, we delicately designed a peripheral circuit for the CCD sensor. The design is mainly composed with multi-voltage circuit, sequential generation circuit, driving circuit and A/D transition parts. As the most important power supply circuit, the multi-voltage circuits with 12 independent voltages are designed with reference power supply IC and set to specified voltage value by the amplifier making up the low-pass filter, which allows the user to obtain a highly stable and accurate voltage with low noise. What's more, to make our design easy to debug, CPLD is selected to generate sequential signal. The A/D converter chip consists of a correlated

High-speed dynamic domino circuit implemented with gaas mesfets

Science.gov (United States)

Yang, Long (Inventor); Long, Stephen I. (Inventor)

1990-01-01

A dynamic logic circuit (AND or OR) utilizes one depletion-mode metal-semiconductor FET for precharging an internal node A, and a plurality of the same type of FETs in series, or a FET in parallel with one or more of the series connected FETs for implementing the logic function. A pair of FETs are connected to provide an output inverter with two series diodes for level shift. A coupling capacitor may be employed with a further FET to provide level shifting required between the inverter and the logic circuit output terminal. These circuits may be cascaded to form a domino chain.

Research on high energy density plasmas and applications

International Nuclear Information System (INIS)

1999-01-01

Recently, technologies on lasers, accelerators, and pulse power machines have been significantly advanced and input power density covers the intensity range from 10 10 W/cm 2 to higher than 10 20 W/cm 2 . As the results, high pressure gas and solid targets can be heated up to very high temperature to create hot dense plasmas which have never appeared on the earth. The high energy density plasmas opened up new research fields such as inertial confinement fusion, high brightness X-ray radiation sources, interiors of galactic nucleus,supernova, stars and planets, ultra high pressure condensed matter physics, plasma particle accelerator, X-ray laser, and so on. Furthermore, since these fields are intimately connected with various industrial sciences and technologies, the high energy density plasma is now studied in industries, government institutions, and so on. This special issue of the Journal of Plasma Physics and Nuclear Fusion Research reviews the high energy density plasma science for the comprehensive understanding of such new fields. In May, 1998, the review committee for investigating the present status and the future prospects of high energy density plasma science was established in the Japan Society of Plasma Science and Nuclear Fusion Research. We held three committee meetings to discuss present status and critical issues of research items related to high energy density plasmas. This special issue summarizes the understandings of the committee. This special issue consists of four chapters: They are Chapter 1: Physics important in the high energy density plasmas, Chapter 2: Technologies related to the plasma generation; drivers such as lasers, pulse power machines, particle beams and fabrication of various targets, Chapter 3: Plasma diagnostics important in high energy density plasma experiments, Chapter 4: A variety of applications of high energy density plasmas; X-ray radiation, particle acceleration, inertial confinement fusion, laboratory astrophysics

High frequency, high time resolution time-to-digital converter employing passive resonating circuits.

Science.gov (United States)

Ripamonti, Giancarlo; Abba, Andrea; Geraci, Angelo

2010-05-01

A method for measuring time intervals accurate to the picosecond range is based on phase measurements of oscillating waveforms synchronous with their beginning and/or end. The oscillation is generated by triggering an LC resonant circuit, whose capacitance is precharged. By using high Q resonators and a final active quenching of the oscillation, it is possible to conjugate high time resolution and a small measurement time, which allows a high measurement rate. Methods for fast analysis of the data are considered and discussed with reference to computing resource requirements, speed, and accuracy. Experimental tests show the feasibility of the method and a time accuracy better than 4 ps rms. Methods aimed at further reducing hardware resources are finally discussed.

High frequency, high time resolution time-to-digital converter employing passive resonating circuits

International Nuclear Information System (INIS)

Ripamonti, Giancarlo; Abba, Andrea; Geraci, Angelo

2010-01-01

A method for measuring time intervals accurate to the picosecond range is based on phase measurements of oscillating waveforms synchronous with their beginning and/or end. The oscillation is generated by triggering an LC resonant circuit, whose capacitance is precharged. By using high Q resonators and a final active quenching of the oscillation, it is possible to conjugate high time resolution and a small measurement time, which allows a high measurement rate. Methods for fast analysis of the data are considered and discussed with reference to computing resource requirements, speed, and accuracy. Experimental tests show the feasibility of the method and a time accuracy better than 4 ps rms. Methods aimed at further reducing hardware resources are finally discussed.

Proposal for the award of two contracts for the provision of high-speed data circuits to the USA

CERN Document Server

2005-01-01

This document concerns the award of two contracts for high-speed (10 Gbit/s) data circuits for Wide Area Network (WAN) connectivity between CERN and the STARLIGHT Internet exchange in Chicago through the MANLAN Internet exchange in New York, USA, on behalf of a consortium comprising CERN, the US Department of Energy, the World Health Organisation and the Centre de Resources Informatiques de la Haute-Savoie (France). The Finance Committee is invited to agree to the negotiation of two contracts, together covering the provision of up to four high-speed (10 Gbit/s) data circuits to the USA, with: GLOBAL CROSSING (CH) for one 10 Gbit/s circuit between CERN and New York, two 10 Gbit/s circuits between New York and Chicago and Internet access points in Geneva and New York, for a period of three years for a total amount of 2 764 517 Swiss francs, not subject to revision. The contract will include options for one additional 10 Gbit/s circuit between CERN and New York and two additional 10 Gbit/s circuits between New Y...

'Speedy' superconducting circuits

International Nuclear Information System (INIS)

Holst, T.

1994-01-01

The most promising concept for realizing ultra-fast superconducting digital circuits is the Rapid Single Flux Quantum (RSFQ) logic. The basic physical principle behind RSFQ logic, which include the storage and transfer of individual magnetic flux quanta in Superconducting Quantum Interference Devices (SQUIDs), is explained. A Set-Reset flip-flop is used as an example of the implementation of an RSFQ based circuit. Finally, the outlook for high-temperature superconducting materials in connection with RSFQ circuits is discussed in some details. (au)

Humidification during high-frequency oscillation ventilation is affected by ventilator circuit and ventilatory setting.

Science.gov (United States)

Chikata, Yusuke; Imanaka, Hideaki; Onishi, Yoshiaki; Ueta, Masahiko; Nishimura, Masaji

2009-08-01

High-frequency oscillation ventilation (HFOV) is an accepted ventilatory mode for acute respiratory failure in neonates. As conventional mechanical ventilation, inspiratory gas humidification is essential. However, humidification during HFOV has not been clarified. In this bench study, we evaluated humidification during HFOV in the open circumstance of ICU. Our hypothesis is that humidification during HFOV is affected by circuit design and ventilatory settings. We connected a ventilator with HFOV mode to a neonatal lung model that was placed in an infant incubator set at 37 degrees C. We set a heated humidifier (Fisher & Paykel) to obtain 37 degrees C at the chamber outlet and 40 degrees C at the distal temperature probe. We measured absolute humidity and temperature at the Y-piece using a rapid-response hygrometer. We evaluated two types of ventilator circuit: a circuit with inner heating wire and another with embedded heating element. In addition, we evaluated three lengths of the inspiratory limb, three stroke volumes, three frequencies, and three mean airway pressures. The circuit with embedded heating element provided significantly higher absolute humidity and temperature than one with inner heating wire. As an extended tube lacking a heating wire was shorter, absolute humidity and temperature became higher. In the circuit with inner heating wire, absolute humidity and temperature increased as stroke volume increased. Humidification during HFOV is affected by circuit design and ventilatory settings.

Gating circuit for single photon-counting fluorescence lifetime instruments using high repetition pulsed light sources

International Nuclear Information System (INIS)

Laws, W.R.; Potter, D.W.; Sutherland, J.C.

1984-01-01

We have constructed a circuit that permits conventional timing electronics to be used in single photon-counting fluorimeters with high repetition rate excitation sources (synchrotrons and mode-locked lasers). Most commercial time-to-amplitude and time-to-digital converters introduce errors when processing very short time intervals and when subjected to high-frequency signals. This circuit reduces the frequency of signals representing the pulsed light source (stops) to the rate of detected fluorescence events (starts). Precise timing between the start/stop pair is accomplished by using the second stop pulse after a start pulse. Important features of our design are that the circuit is insensitive to the simultaneous occurrence of start and stop signals and that the reduction in the stop frequency allows the start/stop time interval to be placed in linear regions of the response functions of commercial timing electronics

Toward Low-Cost, High-Energy Density, and High-Power Density Lithium-Ion Batteries

Science.gov (United States)

Li, Jianlin; Du, Zhijia; Ruther, Rose E.; AN, Seong Jin; David, Lamuel Abraham; Hays, Kevin; Wood, Marissa; Phillip, Nathan D.; Sheng, Yangping; Mao, Chengyu; Kalnaus, Sergiy; Daniel, Claus; Wood, David L.

2017-09-01

Reducing cost and increasing energy density are two barriers for widespread application of lithium-ion batteries in electric vehicles. Although the cost of electric vehicle batteries has been reduced by 70% from 2008 to 2015, the current battery pack cost (268/kWh in 2015) is still >2 times what the USABC targets (125/kWh). Even though many advancements in cell chemistry have been realized since the lithium-ion battery was first commercialized in 1991, few major breakthroughs have occurred in the past decade. Therefore, future cost reduction will rely on cell manufacturing and broader market acceptance. This article discusses three major aspects for cost reduction: (1) quality control to minimize scrap rate in cell manufacturing; (2) novel electrode processing and engineering to reduce processing cost and increase energy density and throughputs; and (3) material development and optimization for lithium-ion batteries with high-energy density. Insights on increasing energy and power densities of lithium-ion batteries are also addressed.

Properties of matter at ultra-high densities

International Nuclear Information System (INIS)

Banerjee, B.; Chitre, S.M.

1975-01-01

The recent discovery of pulsars and their subsequent identification with neutron stars has given a great impetus to the study of the behaviour of matter at ultra high densities. The object of these studies is to calculate the equation of state as a function of density. In this paper, the properties of electrically neutral, cold (T=0) matter at unusually high densities has been reviewed. The physics of the equation of state of such matter divides quite naturally in four density ranges. (i) At the very lowest densities the state of minimum energy is a lattice of 56 Fe atoms. This state persists upto 10 7 g/cm 3 . (ii) In the next density region the nuclei at the lattice sites become neutron rich because the high electron Fermi energy makes inverse beta decay possible. (iii) At a density 4.3 x 10 11 the nuclei become so neutron rich that the neutrons start 'dripping' out of the nuclei and form a gas. This density range is characterised by large, neutron-rich nuclei immersed in a neutron gas. (iv) At a density 2.4 x 10 14 g/cm 3 , the nuclei disappear and a fluid of uniform neutron matter with a small percentage of protons and electrons results. The above four density ranges have been discussed in detail as the equation of state is now well established upto the nuclear density 3 x 10 14 g/cm 3 . The problems of extending the equation of state beyond this density are also touched upon. (author)

Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

Directory of Open Access Journals (Sweden)

Gokhan Sahin

Full Text Available In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiency

High-density carbon ablator ignition path with low-density gas-filled rugby hohlraum

International Nuclear Information System (INIS)

Amendt, Peter; Ho, Darwin D.; Jones, Ogden S.

2015-01-01

A recent low gas-fill density (0.6 mg/cc 4 He) cylindrical hohlraum experiment on the National Ignition Facility has shown high laser-coupling efficiency (>96%), reduced phenomenological laser drive corrections, and improved high-density carbon capsule implosion symmetry [Jones et al., Bull. Am. Phys. Soc. 59(15), 66 (2014)]. In this Letter, an ignition design using a large rugby-shaped hohlraum [Amendt et al., Phys. Plasmas 21, 112703 (2014)] for high energetics efficiency and symmetry control with the same low gas-fill density (0.6 mg/cc 4 He) is developed as a potentially robust platform for demonstrating thermonuclear burn. The companion high-density carbon capsule for this hohlraum design is driven by an adiabat-shaped [Betti et al., Phys. Plasmas 9, 2277 (2002)] 4-shock drive profile for robust high gain (>10) 1-D ignition performance and large margin to 2-D perturbation growth

High-density carbon ablator ignition path with low-density gas-filled rugby hohlraum

Science.gov (United States)

Amendt, Peter; Ho, Darwin D.; Jones, Ogden S.

2015-04-01

A recent low gas-fill density (0.6 mg/cc 4He) cylindrical hohlraum experiment on the National Ignition Facility has shown high laser-coupling efficiency (>96%), reduced phenomenological laser drive corrections, and improved high-density carbon capsule implosion symmetry [Jones et al., Bull. Am. Phys. Soc. 59(15), 66 (2014)]. In this Letter, an ignition design using a large rugby-shaped hohlraum [Amendt et al., Phys. Plasmas 21, 112703 (2014)] for high energetics efficiency and symmetry control with the same low gas-fill density (0.6 mg/cc 4He) is developed as a potentially robust platform for demonstrating thermonuclear burn. The companion high-density carbon capsule for this hohlraum design is driven by an adiabat-shaped [Betti et al., Phys. Plasmas 9, 2277 (2002)] 4-shock drive profile for robust high gain (>10) 1-D ignition performance and large margin to 2-D perturbation growth.

High-density carbon ablator ignition path with low-density gas-filled rugby hohlraum

Energy Technology Data Exchange (ETDEWEB)

Amendt, Peter; Ho, Darwin D.; Jones, Ogden S. [Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)

2015-04-15

A recent low gas-fill density (0.6 mg/cc {sup 4}He) cylindrical hohlraum experiment on the National Ignition Facility has shown high laser-coupling efficiency (>96%), reduced phenomenological laser drive corrections, and improved high-density carbon capsule implosion symmetry [Jones et al., Bull. Am. Phys. Soc. 59(15), 66 (2014)]. In this Letter, an ignition design using a large rugby-shaped hohlraum [Amendt et al., Phys. Plasmas 21, 112703 (2014)] for high energetics efficiency and symmetry control with the same low gas-fill density (0.6 mg/cc {sup 4}He) is developed as a potentially robust platform for demonstrating thermonuclear burn. The companion high-density carbon capsule for this hohlraum design is driven by an adiabat-shaped [Betti et al., Phys. Plasmas 9, 2277 (2002)] 4-shock drive profile for robust high gain (>10) 1-D ignition performance and large margin to 2-D perturbation growth.

Short Circuits of a 10 MW High Temperature Superconducting Wind Turbine Generator

NARCIS (Netherlands)

Song, X.; Polinder, H.; Liu, D.; Mijatovic, Nenad; Holbøll, Joachim; Jensen, Bogi Bech

Direct drive high temperature superconducting (HTS) wind turbine generators have been proposed to tackle challenges for ever increasing wind turbine ratings. Due to smaller reactances in HTS generators, higher fault currents and larger transient torques could occur if sudden short circuits happen at

Impact of hydrogen dilution on optical properties of intrinsic hydrogenated amorphous silicon films prepared by high density plasma chemical vapor deposition for solar cell applications

Science.gov (United States)

Chen, Huai-Yi; Lee, Yao-Jen; Chang, Chien-Pin; Koo, Horng-Show; Lai, Chiung-Hui

2013-01-01

P-i-n single-junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells were successfully fabricated in this study on a glass substrate by high density plasma chemical vapor deposition (HDP-CVD) at low power of 50 W, low temperature of 200°C and various hydrogen dilution ratios (R). The open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor (FF) and conversion efficiency (η) of the solar cell as well as the refractive index (n) and absorption coefficient (α) of the i-layer at 600 nm wavelength rise with increasing R until an abrupt drop at high hydrogen dilution, i.e. R > 0.95. However, the optical energy bandgap (Eg ) of the i-layer decreases with the R increase. Voc and α are inversely correlated with Eg . The hydrogen content affects the i-layer and p/i interface quality of the a-Si:H thin film solar cell with an optimal value of R = 0.95, which corresponds to solar cell conversion efficiency of 3.85%. The proposed a-Si:H thin film solar cell is expected to be improved in performance.

Evaluation of treatment effects for high-performance dye-sensitized solar cells using equivalent circuit analysis

International Nuclear Information System (INIS)

Murayama, Masaki; Mori, Tatsuo

2006-01-01

Equivalent circuit analysis using a one-diode model was carried out as a simpler, more convenient method to evaluate the electric mechanism and to employ effective treatment of a dye-sensitized solar cell (DSC). Cells treated using acetic acid or 4,t-butylpyridine were measured under irradiation (0.1 W/m 2 , AM 1.5) to obtain current-voltage (I-V) curves. Cell performance and equivalent circuit parameters were calculated from the I-V curves. Evaluation based on residual factors was useful for better fitting of the equivalent circuit to the I-V curve. The diode factor value was often over two for high-performance DSCs. Acetic acid treatment was effective to increase the short-circuit current by decreasing the series resistance of cells. In contrast, 4,t-butylpyridine was effective to increase open-circuit voltage by increasing the cell shunt resistance. Previous explanations considered that acetic acid worked to decrease the internal resistance of the TiO 2 layer and butylpyridine worked to lower the back-electron-transfer from the TiO 2 to the electrolyte

Development of high speed integrated circuit for very high resolution timing measurements

International Nuclear Information System (INIS)

Mester, Christian

2009-10-01

A multi-channel high-precision low-power time-to-digital converter application specific integrated circuit for high energy physics applications has been designed and implemented in a 130 nm CMOS process. To reach a target resolution of 24.4 ps, a novel delay element has been conceived. This nominal resolution has been experimentally verified with a prototype, with a minimum resolution of 19 ps. To further improve the resolution, a new interpolation scheme has been described. The ASIC has been designed to use a reference clock with the LHC bunch crossing frequency of 40 MHz and generate all required timing signals internally, to ease to use within the framework of an LHC upgrade. Special care has been taken to minimise the power consumption. (orig.)

Development of high speed integrated circuit for very high resolution timing measurements

Energy Technology Data Exchange (ETDEWEB)

Mester, Christian

2009-10-15

A multi-channel high-precision low-power time-to-digital converter application specific integrated circuit for high energy physics applications has been designed and implemented in a 130 nm CMOS process. To reach a target resolution of 24.4 ps, a novel delay element has been conceived. This nominal resolution has been experimentally verified with a prototype, with a minimum resolution of 19 ps. To further improve the resolution, a new interpolation scheme has been described. The ASIC has been designed to use a reference clock with the LHC bunch crossing frequency of 40 MHz and generate all required timing signals internally, to ease to use within the framework of an LHC upgrade. Special care has been taken to minimise the power consumption. (orig.)

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

International Nuclear Information System (INIS)

Zhang Xiao-Yu; Sun Jian-Dong; Li Xin-Xing; Zhou Yu; Lü Li; Qin Hua; Tan Ren-Bing

2015-01-01

An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V g , the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. (paper)

A low-ripple chargepump circuit for high voltage applications

NARCIS (Netherlands)

Berkhout, M.; Berkhout, M.; van Steenwijk, G.; van Steenwijk, Gijs; van Tuijl, Adrianus Johannes Maria

1995-01-01

The subject of this paper is a fully integrated chargepump circuit with a very low output voltage ripple. At a supply voltage of 30V the chargepump can source 1mA at an output voltage of 40V. Two simple modifications to the classical chargepump circuit give a substantial reduction of the output

Photoionization and High Density Gas

Science.gov (United States)

Kallman, T.; Bautista, M.; White, Nicholas E. (Technical Monitor)

2002-01-01

We present results of calculations using the XSTAR version 2 computer code. This code is loosely based on the XSTAR v.1 code which has been available for public use for some time. However it represents an improvement and update in several major respects, including atomic data, code structure, user interface, and improved physical description of ionization/excitation. In particular, it now is applicable to high density situations in which significant excited atomic level populations are likely to occur. We describe the computational techniques and assumptions, and present sample runs with particular emphasis on high density situations.

High speed and leakage-tolerant domino circuits for high fan-in applications in 70nm CMOS technology

DEFF Research Database (Denmark)

Moradi, Farshad; Wisland, Dag; Mahmoodi, Hamid

This paper presents two proposed circuits that employ a footer transistor that is initially OFF in the evaluation phase to reduce leakage and then turned ON to complete the evaluation. Also a new circuit is added using a NAND gate that improves the performance more than 10% -15% compared...... with latter proposed circuit. According to simulations in a predictive 70 nm process, the proposed circuit increases noise immunity by more than 26X for wide OR gates and shows performance improvement of up to 20% compared to conventional domino logic circuits. The proposed circuit reduces the contention...

A low-jitter RF PLL frequency synthesizer with high-speed mixed-signal down-scaling circuits

International Nuclear Information System (INIS)

Tang Lu; Wang Zhigong; Xue Hong; He Xiaohu; Xu Yong; Sun Ling

2010-01-01

A low-jitter RF phase locked loop (PLL) frequency synthesizer with high-speed mixed-signal down-scaling circuits is proposed. Several techniques are proposed to reduce the design complexity and improve the performance of the mixed-signal down-scaling circuit in the PLL. An improved D-latch is proposed to increase the speed and the driving capability of the DMP in the down-scaling circuit. Through integrating the D-latch with 'OR' logic for dual-modulus operation, the delays associated with both the 'OR' and D-flip-flop (DFF) operations are reduced, and the complexity of the circuit is also decreased. The programmable frequency divider of the down-scaling circuit is realized in a new method based on deep submicron CMOS technology standard cells and a more accurate wire-load model. The charge pump in the PLL is also realized with a novel architecture to improve the current matching characteristic so as to reduce the jitter of the system. The proposed RF PLL frequency synthesizer is realized with a TSMC 0.18-μm CMOS process. The measured phase noise of the PLL frequency synthesizer output at 100 kHz offset from the center frequency is only -101.52 dBc/Hz. The circuit exhibits a low RMS jitter of 3.3 ps. The power consumption of the PLL frequency synthesizer is also as low as 36 mW at a 1.8 V power supply. (semiconductor integrated circuits)

Electronic DC transformer with high power density

NARCIS (Netherlands)

Pavlovský, M.

2006-01-01

This thesis is concerned with the possibilities of increasing the power density of high-power dc-dc converters with galvanic isolation. Three cornerstones for reaching high power densities are identified as: size reduction of passive components, reduction of losses particularly in active components

Custom VLSI circuits for high energy physics

International Nuclear Information System (INIS)

Parker, S.

1998-06-01

This article provides a brief guide to integrated circuits, including their design, fabrication, testing, radiation hardness, and packaging. It was requested by the Panel on Instrumentation, Innovation, and Development of the International Committee for Future Accelerators, as one of a series of articles on instrumentation for future experiments. Their original request emphasized a description of available custom circuits and a set of recommendations for future developments. That has been done, but while traps that stop charge in solid-state devices are well known, those that stop physicists trying to develop the devices are not. Several years spent dodging the former and developing the latter made clear the need for a beginner's guide through the maze, and that is the main purpose of this text

Custom VLSI circuits for high energy physics

Energy Technology Data Exchange (ETDEWEB)

Parker, S. [Univ. of Hawaii, Honolulu, HI (United States)

1998-06-01

This article provides a brief guide to integrated circuits, including their design, fabrication, testing, radiation hardness, and packaging. It was requested by the Panel on Instrumentation, Innovation, and Development of the International Committee for Future Accelerators, as one of a series of articles on instrumentation for future experiments. Their original request emphasized a description of available custom circuits and a set of recommendations for future developments. That has been done, but while traps that stop charge in solid-state devices are well known, those that stop physicists trying to develop the devices are not. Several years spent dodging the former and developing the latter made clear the need for a beginner`s guide through the maze, and that is the main purpose of this text.

General oscillation damping analysis of the L-C filter circuit in the high-power rectifying power supply

International Nuclear Information System (INIS)

Xu Weihua; Chen Yonghao; Wu Junshuan; Kuang Guangli

1998-06-01

Rectifier circuit is the most popular converter. For the ripple demand of high-power load, the L-C filter with invert 'L' type has been used universally. Due to the influence of the second-order link, damped oscillation will occur with proper condition while the circuit state is changed. The ideal cascade damping condition and the parallel one can be obtained easily. Generally, the damping condition of the step response of the L-C filter circuit is induced, and the discussion is given

Digital circuit boards mach 1 GHz

CERN Document Server

Morrison, Ralph

2012-01-01

A unique, practical approach to the design of high-speed digital circuit boards The demand for ever-faster digital circuit designs is beginning to render the circuit theory used by engineers ineffective. Digital Circuit Boards presents an alternative to the circuit theory approach, emphasizing energy flow rather than just signal interconnection to explain logic circuit behavior. The book shows how treating design in terms of transmission lines will ensure that the logic will function, addressing both storage and movement of electrical energy on these lines. It cove

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Science.gov (United States)

Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

2017-04-25

Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

Spontaneous magnetization in high-density quark matter

DEFF Research Database (Denmark)

Tsue, Yasuhiko; da Providência, João; Providência, Constanca

2015-01-01

It is shown that spontaneous magnetization occurs due to the anomalous magnetic moments of quarks in high-density quark matter under the tensor-type four-point interaction. The spin polarized condensate for each flavor of quark appears at high baryon density, which leads to the spontaneous magnet...

Integrated optoelectronic materials and circuits for optical interconnects

International Nuclear Information System (INIS)

Hutcheson, L.D.

1988-01-01

Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected

First applications of high temperature superconductors in microelectronic. Subproject: Foundations of a reality-near simulation of superconducting high frequency circuits. Final report

International Nuclear Information System (INIS)

Wolff, I.; Konopka, J.; Fritsch, U.; Hofschen, S.; Rittweger, M.; Becks, T.; Schroeder, W.; Ma Jianguo.

1994-01-01

The basis of computer aided design of the physical properties of high temperature superconductors in high frequency and microwave areas were not well known and understood at the beginning of this research project. For this reason within in the research project as well new modells for describing the microwave properties of these superconductors have been developed as alos well known numerical analysis techniques as e.g. the boundary integral method, the method of finite differences in time domain and the spectral domain analysis technique have been changed so that they meet the requirements of superconducting high frequency and microwave circuits. Hereby it especially also was considered that the substrate materials used for high temperature superconductors normally have high dielectric constants and big anisotropies so that new analysis techniques had to be developed to consider the influence of these parameters on the components and circuits. The dielectric properties of the substrate materials furthermore have been a subject of measurement activities in which the permittivity tensor of the materials have been determined with high accuracy and ogver a large frequency range. As a result of the performed investigations now improved numerical simulation techniques on a realistic basis are available for the analysis of superconducting high frequency and microwave circuits. (orig.) [de

High Energy Density Sciences with High Power Lasers at SACLA

Science.gov (United States)

Kodama, Ryosuke

2013-10-01

One of the interesting topics on high energy density sciences with high power lasers is creation of extremely high pressures in material. The pressures of more than 0.1 TPa are the energy density corresponding to the chemical bonding energy, resulting in expectation of dramatic changes in the chemical reactions. At pressures of more than TPa, most of material would be melted on the shock Hugoniot curve. However, if the temperature is less than 1eV or lower than a melting point at pressures of more than TPa, novel solid states of matter must be created through a pressured phase transition. One of the interesting materials must be carbon. At pressures of more than TPa, the diamond structure changes to BC and cubic at more than 3TPa. To create such novel states of matter, several kinds of isentropic-like compression techniques are being developed with high power lasers. To explore the ``Tera-Pascal Science,'' now we have a new tool which is an x-ray free electron laser as well as high power lasers. The XFEL will clear the details of the HED states and also efficiently create hot dense matter. We have started a new project on high energy density sciences using an XFEL (SACLA) in Japan, which is a HERMES (High Energy density Revolution of Matter in Extreme States) project.

Recent improvements in the filtration of corrosion products in high temperature water and application to reactor circuits

International Nuclear Information System (INIS)

Darras, R.; Dolle, L.; Chenouard, J.; Laylavoix, F.

1977-01-01

The nature and physico-chemical behavior of corrosion products released by structural materials into high temperature water flowing in power reactor circuits have been investigated in test loops and different power plants. The results improve more particularly the knowledge of probable rate constants governing their disappearance through deposition of crud on the fuel cladding. It appears that a considerable limitation of radioactivity transportation in the primary circuit components of pressurized water reactors is in a general way only possible through extraction of the corrosion products by filtration at a rate adequate to minimize the amount of crud deposited in the core. This extraction rate has been estimated; its magnitude implicates a filtration operating on the high temperature water in the primary circuit which allows the necessary high flows. The application of magnetic and electromagnetic so as deep granular graphite bed filters has been studied. The results concerning efficiencies and limiting yields at high temperatures are given. Estimates concerning technological feasibility and corresponding investments are discussed

A high speed, wide dynamic range digitizer circuit for photomultiplier tubes

International Nuclear Information System (INIS)

Yarema, R.J.; Foster, G.W.; Knickerbocker, K.; Sarraj, M.; Tschirhart, R.; Whitmore, J.; Zimmerman, T.; Lindgren, M.

1995-01-01

A circuit has been designed for digitizing PMT signals over a wide dynamic range (17-18 bits) with 8 bits of resolution at rates up to 53 MHz. Output from the circuit is in a floating point format with a 4 bit exponent and an 8 bit mantissa. The heart of the circuit is a full custom integrated circuit called the QIE (Charge Integrator and Encoder). The design of the QIE and associated circuitry reported here permits operation over a 17 bit dynamic range. Test results of a multirange device are presented for the first time. (orig.)

Disposable photonic integrated circuits for evanescent wave sensors by ultra-high volume roll-to-roll method.

Science.gov (United States)

Aikio, Sanna; Hiltunen, Jussi; Hiitola-Keinänen, Johanna; Hiltunen, Marianne; Kontturi, Ville; Siitonen, Samuli; Puustinen, Jarkko; Karioja, Pentti

2016-02-08

Flexible photonic integrated circuit technology is an emerging field expanding the usage possibilities of photonics, particularly in sensor applications, by enabling the realization of conformable devices and introduction of new alternative production methods. Here, we demonstrate that disposable polymeric photonic integrated circuit devices can be produced in lengths of hundreds of meters by ultra-high volume roll-to-roll methods on a flexible carrier. Attenuation properties of hundreds of individual devices were measured confirming that waveguides with good and repeatable performance were fabricated. We also demonstrate the applicability of the devices for the evanescent wave sensing of ambient refractive index. The production of integrated photonic devices using ultra-high volume fabrication, in a similar manner as paper is produced, may inherently expand methods of manufacturing low-cost disposable photonic integrated circuits for a wide range of sensor applications.

Research and development of basic technologies for the next generation industries, 'three-dimensional circuit elements'. Evaluation on the research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'sanjigen kairo soshi'. Kenkyu kaihatsu hyoka

Energy Technology Data Exchange (ETDEWEB)

NONE

1991-04-01

Research, development and evaluation were performed with an objective of establishing the basic technology related to three-dimensional circuit elements that integrate functions at ultra-high density. For the basic technology of lamination, the SOI technology suitable for the three-dimensional circuit elements was developed, and it has become possible to manufacture high-quality multi-layered crystalline structure by means of annealing that uses laser and electron beam. In addition, a lateral epitaxial technology for solid phase was developed, and the base to be applied to the three-dimensional circuit elements was established. Furthermore, the technology to put thin film circuits together would be useful for high-density integration in the future. The three-dimensional circuit makes parallel processing in each segment possible, whereas a possibility was shown that the processing can be performed at much higher speed than before. Actually a prototype three-dimensional circuit equipped with functions for parallel processing and judgment processing was fabricated. The image pre-processing which has been impossible on the real time basis in the conventional two-dimensional integrated circuit was realized in a speed as fast as milli-second order. These achievements lead to a belief that the targets for the present research and development have been achieved. (NEDO)

The high density and high βpol disruption mechanism on TFTR

International Nuclear Information System (INIS)

Fredrickson, E.D.; Manickam, J.; McGuire, K.M.; Monticello, D.; Nagayama, Y.; Park, W.; Taylor, G.

1992-01-01

Studies of disruptions on TFTR have been extended to include high density disruptions as well as the high β pol disruptions. The data strongly suggests that the (m,n)=(1,1) mode plays an important role in both types of disruptions. Further, for the first time, it is unambiguously shown, using a fast electron cyclotron emission (ECE) instrument for the electron temperature profile measurements, that the (m,n)=(1,1) precursor to the high density disruptions has a 'cold bubble' structure. The precursor to the major disruption at high density resembles the 'vacuum bubble' model of disruptions first proposed by Kadomtsev and Pogutse. (author) 2 refs., 2 figs

Development of integrated thermionic circuits for high-temperature applications

International Nuclear Information System (INIS)

McCormick, J.B.; Wilde, D.; Depp, S.; Hamilton, D.J.; Kerwin, W.; Derouin, C.; Roybal, L.; Dooley, R.

1981-01-01

A class of devices known as integrated thermionic circuits (ITC) capable of extended operation in ambient temperatures up to 500 0 C is described. The evolution of the ITC concept is discussed. A set of practical design and performance equations is demonstrated. Recent experimental results are discussed in which both devices and simple circuits have successfully operated in 500 0 C environments for extended periods of time

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.

Science.gov (United States)

Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

2017-09-01

As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes

Science.gov (United States)

Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

2017-09-01

As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

Electrode/Dielectric Strip For High-Energy-Density Capacitor

Science.gov (United States)

Yen, Shiao-Ping S.

1994-01-01

Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

Short- circuit tests of circuit breakers

OpenAIRE

Chorovský, P.

2015-01-01

This paper deals with short-circuit tests of low voltage electrical devices. In the first part of this paper, there are described basic types of short- circuit tests and their principles. Direct and indirect (synthetic) tests with more details are described in the second part. Each test and principles are explained separately. Oscilogram is obtained from short-circuit tests of circuit breakers at laboratory. The aim of this research work is to propose a test circuit for performing indirect test.

Laser fusion and high energy density science

International Nuclear Information System (INIS)

Kodama, Ryosuke

2005-01-01

High-power laser technology is now opening a variety of new fields of science and technology using laser-produced plasmas. The laser plasma is now recognized as one of the important tools for the investigation and application of matter under extreme conditions, which is called high energy density science. This chapter shows a variety of applications of laser-produced plasmas as high energy density science. One of the more attractive industrial and science applications is the generation of intense pulse-radiation sources, such as the generation of electro-magnetic waves in the ranges of EUV (Extreme Ultra Violet) to gamma rays and laser acceleration of charged particles. The laser plasma is used as an energy converter in this regime. The fundamental science applications of high energy density physics are shown by introducing laboratory astrophysics, the equation of state of high pressure matter, including warm dense matter and nuclear science. Other applications are also presented, such as femto-second laser propulsion and light guiding. Finally, a new systematization is proposed to explore the possibility of the high energy density plasma application, which is called high energy plasma photonics''. This is also exploration of the boundary regions between laser technology and beam optics based on plasma physics. (author)

Precise linear gating circuit on integrated microcircuits

Energy Technology Data Exchange (ETDEWEB)

Butskii, V.V.; Vetokhin, S.S.; Reznikov, I.V.

Precise linear gating circuit on four microcircuits is described. A basic flowsheet of the gating circuit is given. The gating circuit consists of two input differential cascades total load of which is two current followers possessing low input and high output resistances. Follower outlets are connected to high ohmic dynamic load formed with a current source which permits to get high amplification (>1000) at one cascade. Nonlinearity amounts to <0.1% in the range of input signal amplitudes of -10-+10 V. Front duration for an output signal with 10 V amplitude amounts to 100 ns. Attenuation of input signal with a closed gating circuit is 60 db. The gating circuits described is used in the device intended for processing of scintillation sensor signals.

Application specific integrated circuits and hybrid micro circuits for nuclear instrumentation

International Nuclear Information System (INIS)

Chandratre, V.B.; Sukhwani, Menka; Mukhopadhyay, P.K.; Shastrakar, R.S.; Sudheer, M.; Shedam, V.; Keni, Anubha

2009-01-01

Rapid development in semiconductor technology, sensors, detectors and requirements of high energy physics experiments as well as advances in commercially available nuclear instruments have lead to challenges for instrumentation. These challenges are met with development of Application Specific Integrated Circuits and Hybrid Micro Circuits. This paper discusses various activities in ASIC and HMC development in Bhabha Atomic Research Centre. (author)

Operation and control of high density tokamak reactors

International Nuclear Information System (INIS)

Attenberger, S.E.; McAlees, D.G.

1976-01-01

The incentive for high density operation of a tokamak reactor was discussed. It is found that high density permits ignition in a relatively small, moderately elongated plasma with a moderate magnetic field strength. Under these conditions, neutron wall loadings approximately 4 MW/m 2 must be tolerated. The sensitivity analysis with respect to impurity effects shows that impurity control will most likely be necessary to achieve the desired plasma conditions. The charge exchange sputtered impurities are found to have an important effect so that maintaining a low neutral density in the plasma is critical. If it is assumed that neutral beams will be used to heat the plasma to ignition, high energy injection is required (approximately 250 keV) when heating is accompished at full density. A scenario is outlined where the ignition temperature is established at low density and then the fueling rate is increased to attain ignition. This approach may permit beams with energies being developed for use in TFTR to be successfully used to heat a high density device of the type described here to ignition

Highly Conductive Nano-Silver Circuits by Inkjet Printing

Science.gov (United States)

Zhu, Dongbin; Wu, Minqiang

2018-06-01

Inkjet technology has become popular in the field of printed electronics due to its superior properties such as simple processes and printable complex patterns. Electrical conductivity of the circuits is one of the key factors in measuring the performance of printed electronics, which requires great material properties and a manufactured process. With excellent conductivity and ductility, silver is an ideal material as the wire connecting components. This review summarizes the progress of conductivity studies on inkjet printed nano-silver lines, including ink composition and nanoparticle morphology, deposition of nano-silver lines with uniform and high aspect ratios, sintering mechanisms and alternative methods of thermal sintering. Finally, the research direction on inkjet printed electronics is proposed.

Empty substrate integrated waveguide technology for E plane high-frequency and high-performance circuits

Science.gov (United States)

Belenguer, Angel; Cano, Juan Luis; Esteban, Héctor; Artal, Eduardo; Boria, Vicente E.

2017-01-01

Substrate integrated circuits (SIC) have attracted much attention in the last years because of their great potential of low cost, easy manufacturing, integration in a circuit board, and higher-quality factor than planar circuits. A first suite of SIC where the waves propagate through dielectric have been first developed, based on the well-known substrate integrated waveguide (SIW) and related technological implementations. One step further has been made with a new suite of empty substrate integrated waveguides, where the waves propagate through air, thus reducing the associated losses. This is the case of the empty substrate integrated waveguide (ESIW) or the air-filled substrate integrated waveguide (air-filled SIW). However, all these SIC are H plane structures, so classical H plane solutions in rectangular waveguides have already been mapped to most of these new SIC. In this paper a novel E plane empty substrate integrated waveguide (ESIW-E) is presented. This structure allows to easily map classical E plane solutions in rectangular waveguide to this new substrate integrated solution. It is similar to the ESIW, although more layers are needed to build the structure. A wideband transition (covering the frequency range between 33 GHz and 50 GHz) from microstrip to ESIW-E is designed and manufactured. Measurements are successfully compared with simulation, proving the validity of this new SIC. A broadband high-frequency phase shifter (for operation from 35 GHz to 47 GHz) is successfully implemented in ESIW-E, thus proving the good performance of this new SIC in a practical application.

High density high-TC ceramic superconductors by hot pressing

International Nuclear Information System (INIS)

Mak, S.; Chaklader, A.C.D.

1989-01-01

High density and high T C superconductor specimens, YBa 2 Cu 3 O x , have been produced by hot-pressing. The factors studied are the effect of hot pressing on the density, the oxygen stoichiometry, the crystal structure, and the critical temperature. Hot pressing followed by heat treatment increased the density of the specimen to 93%. The hot pressing itself did not significantly affect the oxygen content in the specimen, and although the crystal structure appeared to be orthorhombic, the specimens were not superconducting above liquid nitrogen temperature. The superconductivity was restored after head treatment in oxygen. The highest critical temperature (T C ) of the hot pressed pellets was 82K, which was slightly lower than the T C that could be obtained with the cold pressed/sintered pellets. (6 refs., 5 figs., tab.)

Feedback controlled, reactor relevant, high-density, high-confinement scenarios at ASDEX Upgrade

Science.gov (United States)

Lang, P. T.; Blanken, T. C.; Dunne, M.; McDermott, R. M.; Wolfrum, E.; Bobkov, V.; Felici, F.; Fischer, R.; Janky, F.; Kallenbach, A.; Kardaun, O.; Kudlacek, O.; Mertens, V.; Mlynek, A.; Ploeckl, B.; Stober, J. K.; Treutterer, W.; Zohm, H.; ASDEX Upgrade Team

2018-03-01

One main programme topic at the ASDEX Upgrade all-metal-wall tokamak is development of a high-density regime with central densities at reactor grade level while retaining high-confinement properties. This required development of appropriate control techniques capable of coping with the pellet tool, a powerful means of fuelling but one which presented challenges to the control system for handling of related perturbations. Real-time density profile control was demonstrated, raising the core density well above the Greenwald density while retaining the edge density in order to avoid confinement losses. Recently, a new model-based approach was implemented that allows direct control of the central density. Investigations focussed first on the N-seeding scenario owing to its proven potential to yield confinement enhancements. Combining pellets and N seeding was found to improve the divertor buffering further and enhance the operational range accessible. For core densities up to about the Greenwald density, a clear improvement with respect to the non-seeding reference was achieved; however, at higher densities this benefit is reduced. This behaviour is attributed to recurrence of an outward shift of the edge density profile, resulting in a reduced peeling-ballooning stability. This is similar to the shift seen during strong gas puffing, which is required to prevent impurity influx in ASDEX Upgrade. First tests indicate that highly-shaped plasma configurations like the ITER base-line scenario, respond very well to pellet injection, showing efficient fuelling with no measurable impact on the edge density profile.

High Density Digital Data Storage System

Science.gov (United States)

Wright, Kenneth D., II; Gray, David L.; Rowland, Wayne D.

1991-01-01

The High Density Digital Data Storage System was designed to provide a cost effective means for storing real-time data from the field-deployable digital acoustic measurement system. However, the high density data storage system is a standalone system that could provide a storage solution for many other real time data acquisition applications. The storage system has inputs for up to 20 channels of 16-bit digital data. The high density tape recorders presently being used in the storage system are capable of storing over 5 gigabytes of data at overall transfer rates of 500 kilobytes per second. However, through the use of data compression techniques the system storage capacity and transfer rate can be doubled. Two tape recorders have been incorporated into the storage system to produce a backup tape of data in real-time. An analog output is provided for each data channel as a means of monitoring the data as it is being recorded.

High-density-plasma diagnostics in magnetic-confinement fusion

International Nuclear Information System (INIS)

Jahoda, F.C.

1982-01-01

The lectures will begin by defining high density in the context of magnetic confinement fusion research and listing some alternative reactor concepts, ranging from n/sub e/ approx. 2 x 10 14 cm -3 to several orders of magnitude greater, that offer potential advantages over the main-line, n/sub e/ approx. 1 x 10 14 cm -3 , Tokamak reactor designs. The high density scalings of several major diagnostic techniques, some favorable and some disadvantageous, will be discussed. Special emphasis will be given to interferometric methods, both electronic and photographic, for which integral n/sub e/dl measurements and associated techniques are accessible with low wavelength lasers. Reactor relevant experience from higher density, smaller dimension devices exists. High density implies high β, which implies economies of scale. The specialized features of high β diagnostics will be discussed

Design and implementation of improved LsCpLp resonant circuit for power supply for high-power electromagnetic acoustic transducer excitation

Science.gov (United States)

Zao, Yongming; Ouyang, Qi; Chen, Jiawei; Zhang, Xinglan; Hou, Shuaicheng

2017-08-01

This paper investigates the design and implementation of an improved series-parallel inductor-capacitor-inductor (LsCpLp) resonant circuit power supply for excitation of electromagnetic acoustic transducers (EMATs). The main advantage of the proposed resonant circuit is the absence of a high-permeability dynamic transformer. A high-frequency pulsating voltage gain can be achieved through a double resonance phenomenon. Both resonant tailing behavior and higher harmonics are suppressed by the improved resonant circuit, which also contributes to the generation of ultrasonic waves. Additionally, the proposed circuit can realize impedance matching and can also optimize the transduction efficiency. The complete design and implementation procedure for the power supply is described and has been validated by implementation of the proposed power supply to drive a portable EMAT. The circuit simulation results show close agreement with the experimental results and thus confirm the validity of the proposed topology. The proposed circuit is suitable for use as a portable EMAT excitation power supply that is fed by a low-voltage source.

Design and implementation of improved LsCpLp resonant circuit for power supply for high-power electromagnetic acoustic transducer excitation.

Science.gov (United States)

Zao, Yongming; Ouyang, Qi; Chen, Jiawei; Zhang, Xinglan; Hou, Shuaicheng

2017-08-01

This paper investigates the design and implementation of an improved series-parallel inductor-capacitor-inductor (L s C p L p ) resonant circuit power supply for excitation of electromagnetic acoustic transducers (EMATs). The main advantage of the proposed resonant circuit is the absence of a high-permeability dynamic transformer. A high-frequency pulsating voltage gain can be achieved through a double resonance phenomenon. Both resonant tailing behavior and higher harmonics are suppressed by the improved resonant circuit, which also contributes to the generation of ultrasonic waves. Additionally, the proposed circuit can realize impedance matching and can also optimize the transduction efficiency. The complete design and implementation procedure for the power supply is described and has been validated by implementation of the proposed power supply to drive a portable EMAT. The circuit simulation results show close agreement with the experimental results and thus confirm the validity of the proposed topology. The proposed circuit is suitable for use as a portable EMAT excitation power supply that is fed by a low-voltage source.

Probing topological relations between high-density and low-density regions of 2MASS with hexagon cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Yongfeng [American Physical Society, San Diego, CA (United States); Xiao, Weike, E-mail: yongfeng.wu@maine.edu [Department of Astronautics Engineering, Harbin Institute of Technology, P.O. Box 345, Heilongjiang Province 150001 (China)

2014-02-01

We introduced a new two-dimensional (2D) hexagon technique for probing the topological structure of the universe in which we mapped regions of the sky with high and low galaxy densities onto a 2D lattice of hexagonal unit cells. We defined filled cells as corresponding to high-density regions and empty cells as corresponding to low-density regions. The numbers of filled cells and empty cells were kept the same by controlling the size of the cells. By analyzing the six sides of each hexagon, we could obtain and compare the statistical topological properties of high-density and low-density regions of the universe in order to have a better understanding of the evolution of the universe. We applied this hexagonal method to Two Micron All Sky Survey data and discovered significant topological differences between the high-density and low-density regions. Both regions had significant (>5σ) topological shifts from both the binomial distribution and the random distribution.

Recent Progress in the Development of Printed Thin-Film Transistors and Circuits with High-Resolution Printing Technology.

Science.gov (United States)

Fukuda, Kenjiro; Someya, Takao

2017-07-01

Printed electronics enable the fabrication of large-scale, low-cost electronic devices and systems, and thus offer significant possibilities in terms of developing new electronics/optics applications in various fields. Almost all electronic applications require information processing using logic circuits. Hence, realizing the high-speed operation of logic circuits is also important for printed devices. This report summarizes recent progress in the development of printed thin-film transistors (TFTs) and integrated circuits in terms of materials, printing technologies, and applications. The first part of this report gives an overview of the development of functional inks such as semiconductors, electrodes, and dielectrics. The second part discusses high-resolution printing technologies and strategies to enable high-resolution patterning. The main focus of this report is on obtaining printed electrodes with high-resolution patterning and the electrical performance of printed TFTs using such printed electrodes. In the final part, some applications of printed electronics are introduced to exemplify their potential. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal measurement a requirement for monolithic microwave integrated circuit design

OpenAIRE

Hopper, Richard; Oxley, C. H.

2008-01-01

The thermal management of structures such as Monolithic Microwave Integrated Circuits (MMICs) is important, given increased circuit packing densities and RF output powers. The paper will describe the IR measurement technology necessary to obtain accurate temperature profiles on the surface of semiconductor devices. The measurement procedure will be explained, including the device mounting arrangement and emissivity correction technique. The paper will show how the measurement technique has be...

Controlling Blend Morphology for Ultra-High Current Density in Non-Fullerene Acceptor Based Organic Solar Cells

KAUST Repository

Song, Xin

2018-01-23

Due to the high absorption coefficient and modulated band gap of non-fullerene small molecule acceptors (NFAs), photons can be utilized more efficiently in near-infrared (NIR) range. In this report, we highlight a system with a well-known polymer donor (PTB7-Th) blended with a narrow bandgap non-fullerene acceptor (IEICO-4F) as active layer and 1-chloronaphthalene (CN) as the solvent additive. The optimization of the photoactive layer nanomorphology yields short-circuit current density value (Jsc) of 27.3 mA/cm2, one of the highest value in OSCs reported to date, which competes with other types of solution processed solar cells such as perovskite or quantum dot devices. Along with decent open-circuit voltage (0.71V) and fill factor values (66%), a power conversion efficiency of 12.8% is achieved for the champion devices. Grazing incidence wide-angle X-ray scattering (GIWAXS) patterns and resonant soft X-ray scattering (R-SoXS) elucidate that the origin of this high photocurrent is mainly due to increased π-π coherence length of the acceptor, the domain spacing as well as the mean-square composition variation of the blend. Optoelectronic measurements confirm a balanced hole and electron mobility and reduced trap-assisted recombination for the best devices. These findings unveil the relevant solvent processing-nanostructure-electronic properties correlation in low band gap non-fullerene based solar cells, which provide a helpful guide for maximizing photocurrent that can pave the way for high efficiency organic solar cells.

Controlling Blend Morphology for Ultra-High Current Density in Non-Fullerene Acceptor Based Organic Solar Cells

KAUST Repository

Song, Xin; Gasparini, Nicola; Ye, Long; Yao, Huifeng; Hou, Jianhui; Ade, Harald; Baran, Derya

2018-01-01

Due to the high absorption coefficient and modulated band gap of non-fullerene small molecule acceptors (NFAs), photons can be utilized more efficiently in near-infrared (NIR) range. In this report, we highlight a system with a well-known polymer donor (PTB7-Th) blended with a narrow bandgap non-fullerene acceptor (IEICO-4F) as active layer and 1-chloronaphthalene (CN) as the solvent additive. The optimization of the photoactive layer nanomorphology yields short-circuit current density value (Jsc) of 27.3 mA/cm2, one of the highest value in OSCs reported to date, which competes with other types of solution processed solar cells such as perovskite or quantum dot devices. Along with decent open-circuit voltage (0.71V) and fill factor values (66%), a power conversion efficiency of 12.8% is achieved for the champion devices. Grazing incidence wide-angle X-ray scattering (GIWAXS) patterns and resonant soft X-ray scattering (R-SoXS) elucidate that the origin of this high photocurrent is mainly due to increased π-π coherence length of the acceptor, the domain spacing as well as the mean-square composition variation of the blend. Optoelectronic measurements confirm a balanced hole and electron mobility and reduced trap-assisted recombination for the best devices. These findings unveil the relevant solvent processing-nanostructure-electronic properties correlation in low band gap non-fullerene based solar cells, which provide a helpful guide for maximizing photocurrent that can pave the way for high efficiency organic solar cells.

Towards high-density matter with relativistic heavy-ion collisions

International Nuclear Information System (INIS)

Nagamiya, Shoji.

1990-04-01

Recent progress in nucleus-nucleus collisions at BNL and CERN suggests a hint that the formation of high-density nuclear matter could be possible with relativistic heavy-ion beams. What is the maximum density that can be achieved by heavy-ion collisions? Are there data which show evidence or hints on the formation of high density matter? Why is the research of high-density interesting? How about the future possibilities on this subject? These points are discussed. (author)

New aspects of high energy density plasma

International Nuclear Information System (INIS)

Hotta, Eiki

2005-10-01

The papers presented at the symposium on 'New aspects of high energy density plasma' held at National Institute for Fusion Science are collected in this proceedings. The papers reflect the present status and recent progress in the experiments and theoretical works on high energy density plasma produced by pulsed power technology. The 13 of the presented papers are indexed individually. (J.P.N.)

Resistor Combinations for Parallel Circuits.

Science.gov (United States)

McTernan, James P.

1978-01-01

To help simplify both teaching and learning of parallel circuits, a high school electricity/electronics teacher presents and illustrates the use of tables of values for parallel resistive circuits in which total resistances are whole numbers. (MF)

High-frequency analog integrated circuit design

CERN Document Server

1995-01-01

To learn more about designing analog integrated circuits (ICs) at microwave frequencies using GaAs materials, turn to this text and reference. It addresses GaAs MESFET-based IC processing. Describes the newfound ability to apply silicon analog design techniques to reliable GaAs materials and devices which, until now, was only available through technical papers scattered throughout hundred of articles in dozens of professional journals.

Compact beam splitters with deep gratings for miniature photonic integrated circuits: design and implementation aspects.

Science.gov (United States)

Chen, Chin-Hui; Klamkin, Jonathan; Nicholes, Steven C; Johansson, Leif A; Bowers, John E; Coldren, Larry A

2009-09-01

We present an extensive study of an ultracompact grating-based beam splitter suitable for photonic integrated circuits (PICs) that have stringent density requirements. The 10 microm long beam splitter exhibits equal splitting, low insertion loss, and also provides a high extinction ratio in an integrated coherent balanced receiver. We further present the design strategies for avoiding mode distortion in the beam splitter and discuss optimization of the widths of the detectors to improve insertion loss and extinction ratio of the coherent receiver circuit. In our study, we show that the grating-based beam splitter is a competitive technology having low fabrication complexity for ultracompact PICs.

Three-Phase Short-Circuit Current Calculation of Power Systems with High Penetration of VSC-Based Renewable Energy

Directory of Open Access Journals (Sweden)

Niancheng Zhou

2018-03-01

Full Text Available Short-circuit current level of power grid will be increased with high penetration of VSC-based renewable energy, and a strong coupling between transient fault process and control strategy will change the fault features. The full current expression of VSC-based renewable energy was obtained according to transient characteristics of short-circuit current. Furtherly, by analyzing the closed-loop transfer function model of controller and current source characteristics presented in steady state during a fault, equivalent circuits of VSC-based renewable energy of fault transient state and steady state were proposed, respectively. Then the correctness of the theory was verified by experimental tests. In addition, for power grid with VSC-based renewable energy, superposition theorem was used to calculate AC component and DC component of short-circuit current, respectively, then the peak value of short-circuit current was evaluated effectively. The calculated results could be used for grid planning and design, short-circuit current management as well as adjustment of relay protection. Based on comparing calculation and simulation results of 6-node 500 kV Huainan power grid and 35-node 220 kV Huaisu power grid, the effectiveness of the proposed method was verified.

Standard high-reliability integrated circuit logic packaging. [for deep space tracking stations

Science.gov (United States)

Slaughter, D. W.

1977-01-01

A family of standard, high-reliability hardware used for packaging digital integrated circuits is described. The design transition from early prototypes to production hardware is covered and future plans are discussed. Interconnections techniques are described as well as connectors and related hardware available at both the microcircuit packaging and main-frame level. General applications information is also provided.

Benchmark of AC and DC Active Power Decoupling Circuits for Second-Order Harmonic Mitigation in Kilowatt-Scale Single-Phase Inverters

DEFF Research Database (Denmark)

Qin, Zian; Tang, Yi; Loh, Poh Chiang

2016-01-01

efficiency and high power density is identified and comprehensively studied, and the commercially available film capacitors, the circuit topologies, and the control strategies adopted for active power decoupling are all taken into account. Then, an adaptive decoupling voltage control method is proposed...... to further improve the performance of dc decoupling in terms of efficiency and reliability. The feasibility and superiority of the identified solution for active power decoupling together with the proposed adaptive decoupling voltage control method are finally verified by both the simulation and experimental......This paper presents the benchmark study of ac and dc active power decoupling circuits for second order harmonic mitigation in kW scale single-phase inverters. First of all, a brief comparison of recently reported active power decoupling circuits is given, and the best solution that can achieve high...

High current density ion source

International Nuclear Information System (INIS)

King, H.J.

1977-01-01

A high-current-density ion source with high total current is achieved by individually directing the beamlets from an electron bombardment ion source through screen and accelerator electrodes. The openings in these screen and accelerator electrodes are oriented and positioned to direct the individual beamlets substantially toward a focus point. 3 figures, 1 table

What's new about generator circuit breakers

International Nuclear Information System (INIS)

Kolarik, P.L.

1979-01-01

The need for updating ANSI C37 Standards for AC high-voltage circuit breakers has become necessary because of the increased interest in power circuit breakers for generator application. These circuit breakers, which have continuous current ratings and rated short-circuit currents that are much higher than those presently covered by existing C37 Standards, take on added importance because they are being installed in critical AC power supplies at nuclear power stations

Spike timing precision of neuronal circuits.

Science.gov (United States)

Kilinc, Deniz; Demir, Alper

2018-04-17

Spike timing is believed to be a key factor in sensory information encoding and computations performed by the neurons and neuronal circuits. However, the considerable noise and variability, arising from the inherently stochastic mechanisms that exist in the neurons and the synapses, degrade spike timing precision. Computational modeling can help decipher the mechanisms utilized by the neuronal circuits in order to regulate timing precision. In this paper, we utilize semi-analytical techniques, which were adapted from previously developed methods for electronic circuits, for the stochastic characterization of neuronal circuits. These techniques, which are orders of magnitude faster than traditional Monte Carlo type simulations, can be used to directly compute the spike timing jitter variance, power spectral densities, correlation functions, and other stochastic characterizations of neuronal circuit operation. We consider three distinct neuronal circuit motifs: Feedback inhibition, synaptic integration, and synaptic coupling. First, we show that both the spike timing precision and the energy efficiency of a spiking neuron are improved with feedback inhibition. We unveil the underlying mechanism through which this is achieved. Then, we demonstrate that a neuron can improve on the timing precision of its synaptic inputs, coming from multiple sources, via synaptic integration: The phase of the output spikes of the integrator neuron has the same variance as that of the sample average of the phases of its inputs. Finally, we reveal that weak synaptic coupling among neurons, in a fully connected network, enables them to behave like a single neuron with a larger membrane area, resulting in an improvement in the timing precision through cooperation.

Plasma Photonic Devices for High Energy Density Science

International Nuclear Information System (INIS)

Kodama, R.

2005-01-01

High power laser technologies are opening a variety of attractive fields of science and technology using high energy density plasmas such as plasma physics, laboratory astrophysics, material science, nuclear science including medical applications and laser fusion. The critical issues in the applications are attributed to the control of intense light and enormous density of charged particles including efficient generation of the particles such as MeV electrons and protons with a current density of TA/cm2. Now these application possibilities are limited only by the laser technology. These applications have been limited in the control of the high power laser technologies and their optics. However, if we have another device consisted of the 4th material, i.e. plasma, we will obtain a higher energy density condition and explore the application possibilities, which could be called high energy plasma device. One of the most attractive devices has been demonstrated in the fast ignition scheme of the laser fusion, which is cone-guiding of ultra-intense laser light in to high density regions1. This is one of the applications of the plasma device to control the ultra-intense laser light. The other role of the devices consisted of transient plasmas is control of enormous energy-density particles in a fashion analogous to light control with a conventional optical device. A plasma fibre (5?m/1mm), as one example of the devices, has guided and deflected the high-density MeV electrons generated by ultra-intense laser light 2. The electrons have been well collimated with either a lens-like plasma device or a fibre-like plasma, resulting in isochoric heating and creation of ultra-high pressures such as Giga bar with an order of 100J. Plasmas would be uniquely a device to easily control the higher energy density particles like a conventional optical device as well as the ultra-intense laser light, which could be called plasma photonic device. (Author)

Study on phase noise induced by 1/f noise of the modulator drive circuit in high-sensitivity fiber optic gyroscope

Science.gov (United States)

Teng, Fei; Jin, Jing; Li, Yong; Zhang, Chunxi

2018-05-01

The contribution of modulator drive circuit noise as a 1/f noise source to the output noise of the high-sensitivity interferometric fiber optic gyroscope (IFOG) was studied here. A noise model of closed-loop IFOG was built. By applying the simulated 1/f noise sequence into the model, a gyroscope output data series was acquired, and the corresponding power spectrum density (PSD) and the Allan variance curve were calculated to analyze the noise characteristic. The PSD curve was in the spectral shape of 1/f, which verifies that the modulator drive circuit induced a low frequency 1/f phase noise into the gyroscope. The random walk coefficient (RWC), a standard metric to characterize the noise performance of the IFOG, was calculated according to the Allan variance curve. Using an operational amplifier with an input 1/f noise of 520 nV/√Hz at 1 Hz, the RWC induced by this 1/f noise was 2 × 10-4°/√h, which accounts for 63% of the total RWC. To verify the correctness of the noise model we proposed, a high-sensitivity gyroscope prototype was built and tested. The simulated Allan variance curve gave a good rendition of the prototype actual measured curve. The error percentage between the simulated RWC and the measured value was less than 13%. According to the model, a noise reduction method is proposed and the effectiveness is verified by the experiment.

Comparative Study of Crosstalk Reduction Techniques in RF Printed Circuit Board Using FDTD Method

Directory of Open Access Journals (Sweden)

Rajeswari Packianathan

2015-01-01

Full Text Available Miniaturization of the feature size in modern electronic circuits results from placing interconnections in close proximity with a high packing density. As a result, coupling between the adjacent lines has increased significantly, causing crosstalk to become an important concern in high-performance circuit design. In certain applications, microstriplines may be used in printed circuit boards for propagating high-speed signals, rather than striplines. Here, the electromagnetic coupling effects are analyzed for various microstrip transmission line structures, namely, microstriplines with a guard trace, double stub microstriplines, and parallel serpentine microstriplines using the finite-difference time-domain method. The numerical results are compared with simulation results, where the variants are simulated using an Ansoft high-frequency structure simulator. The analysis and simulation results are experimentally validated by fabricating a prototype and establishing a good correspondence between them. Numerical results are compared with simulation and experimental results, showing that double stub microstriplines reduce the far end crosstalk by 7 dB and increase the near end crosstalk by about 2 dB compared with the parallel microstriplines. Parallel serpentine microstriplines reduce the far end crosstalk by more than 10 dB and also reduce more than 15 mV of peak far end crosstalk voltage, compared with parallel microstriplines.

Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

KAUST Repository

Hanna, Amir

2015-12-04

High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

Thermocleavable Materials for Polymer Solar Cells with High Open Circuit Voltage-A Comparative Study

DEFF Research Database (Denmark)

Tromholt, Thomas; Gevorgyan, Suren; Jørgensen, Mikkel

2009-01-01

The search for polymer solar cells giving a high open circuit voltage was conducted through a comparative study of four types of bulk-heterojunction solar cells employing different photoactive layers. As electron donors the thermo-cleavable polymer poly-(3-(2-methylhexyloxycarbonyl)dithiophene) (P3......MHOCT) and unsubstituted polythiophene (PT) were used, the latter of which results from thermo cleaving the former at 310 °C. As reference, P3HT solar cells were built in parallel. As electron acceptors, either PCBM or bis-[60]PCBM were used. In excess of 300 solar cells were produced under as identical...... conditions as possible, varying only the material combination of the photo active layer. It was observed that on replacing PCBM with bis[60]PCBM, the open circuit voltage on average increased by 100 mV for P3MHOCT and 200 mV for PT solar cells. Open circuit voltages approaching 1 V were observed for the PT:bis...

Oscillator circuits

CERN Document Server

Graf, Rudolf F

1996-01-01

This series of circuits provides designers with a quick source for oscillator circuits. Why waste time paging through huge encyclopedias when you can choose the topic you need and select any of the specialized circuits sorted by application?This book in the series has 250-300 practical, ready-to-use circuit designs, with schematics and brief explanations of circuit operation. The original source for each circuit is listed in an appendix, making it easy to obtain additional information.Ready-to-use circuits.Grouped by application for easy look-up.Circuit source listing

Measuring circuits

CERN Document Server

Graf, Rudolf F

1996-01-01

This series of circuits provides designers with a quick source for measuring circuits. Why waste time paging through huge encyclopedias when you can choose the topic you need and select any of the specialized circuits sorted by application?This book in the series has 250-300 practical, ready-to-use circuit designs, with schematics and brief explanations of circuit operation. The original source for each circuit is listed in an appendix, making it easy to obtain additional information.Ready-to-use circuits.Grouped by application for easy look-up.Circuit source listings

Models for Experimental High Density Housing

Science.gov (United States)

Bradecki, Tomasz; Swoboda, Julia; Nowak, Katarzyna; Dziechciarz, Klaudia

2017-10-01

The article presents the effects of research on models of high density housing. The authors present urban projects for experimental high density housing estates. The design was based on research performed on 38 examples of similar housing in Poland that have been built after 2003. Some of the case studies show extreme density and that inspired the researchers to test individual virtual solutions that would answer the question: How far can we push the limits? The experimental housing projects show strengths and weaknesses of design driven only by such indexes as FAR (floor attenuation ratio - housing density) and DPH (dwellings per hectare). Although such projects are implemented, the authors believe that there are reasons for limits since high index values may be in contradiction to the optimum character of housing environment. Virtual models on virtual plots presented by the authors were oriented toward maximising the DPH index and DAI (dwellings area index) which is very often the main driver for developers. The authors also raise the question of sustainability of such solutions. The research was carried out in the URBAN model research group (Gliwice, Poland) that consists of academic researchers and architecture students. The models reflect architectural and urban regulations that are valid in Poland. Conclusions might be helpful for urban planners, urban designers, developers, architects and architecture students.

Control strategy and hardware implementation for DC–DC boost power circuit based on proportional–integral compensator for high voltage application

Directory of Open Access Journals (Sweden)

Sanjeevikumar Padmanaban

2015-06-01

Full Text Available For high-voltage (HV applications, the designers mostly prefer the classical DC–DC boost converter. However, it lacks due to the limitation of the output voltage by the gain transfer ratio, decreased efficiency and its requirement of two sensors for feedback signals, which creates complex control scheme with increased overall cost. Furthermore, the output voltage and efficiency are reduced due to the self-parasitic behavior of power circuit components. To overcome these drawbacks, this manuscript provides, the theoretical development and hardware implementation of DC–DC step-up (boost power converter circuit for obtaining extra output-voltage high-performance. The proposed circuit substantially improves the high output-voltage by voltage-lift technology with a closed loop proportional–integral controller. This complete numerical model of the converter circuit including closed loop P-I controller is developed in simulation (Matlab/Simulink software and the hardware prototype model is implemented with digital signal processor (DSP TMS320F2812. A detailed performance analysis was carried out under both line and load regulation conditions. Numerical simulation and its verification results provided in this paper, prove the good agreement of the circuit with theoretical background.

Digital radioisotope moisture-density meter

International Nuclear Information System (INIS)

Bychvarov, N.; Vankov, I.; Dimitrov, L.

1982-01-01

The primary information from the detectors of a combined radioisotope moisture-density meter is obtained as pulses, their counting rate being functionally dependent on the humidity per unit volume and the wet density. However, most practical cases demand information on the moisture per unit weight and the mass density of the dry skeleton. The paper describes how the proposed electronic circuit processes the input primary information to obtain the moisture in weight % and the mass density of the dry skeleton in g/cm 3 . (authors)

Research and development of basic technologies for the next generation industries, 'three-dimensional circuit elements'. Evaluation on the research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'sanjigen kairo soshi'. Kenkyu kaihatsu hyoka

Energy Technology Data Exchange (ETDEWEB)

NONE

1991-04-01

Research, development and evaluation were performed with an objective of establishing the basic technology related to three-dimensional circuit elements that integrate functions at ultra-high density. For the basic technology of lamination, the SOI technology suitable for the three-dimensional circuit elements was developed, and it has become possible to manufacture high-quality multi-layered crystalline structure by means of annealing that uses laser and electron beam. In addition, a lateral epitaxial technology for solid phase was developed, and the base to be applied to the three-dimensional circuit elements was established. Furthermore, the technology to put thin film circuits together would be useful for high-density integration in the future. The three-dimensional circuit makes parallel processing in each segment possible, whereas a possibility was shown that the processing can be performed at much higher speed than before. Actually a prototype three-dimensional circuit equipped with functions for parallel processing and judgment processing was fabricated. The image pre-processing which has been impossible on the real time basis in the conventional two-dimensional integrated circuit was realized in a speed as fast as milli-second order. These achievements lead to a belief that the targets for the present research and development have been achieved. (NEDO)

High density operation in pulsator

International Nuclear Information System (INIS)

Klueber, O.; Cannici, B.; Engelhardt, W.; Gernhardt, J.; Glock, E.; Karger, F.; Lisitano, G.; Mayer, H.M.; Meisel, D.; Morandi, P.

1976-03-01

This report summarizes the results of experiments at high electron densities (>10 14 cm -3 ) which have been achieved by pulsed gas inflow during the discharge. At these densities a regime is established which is characterized by βsub(p) > 1, nsub(i) approximately nsub(e), Tsub(i) approximately Tsub(e) and tausub(E) proportional to nsub(e). Thus the toroidal magnetic field contributes considerably to the plasma confinement and the ions constitute almost half of the plasma pressure. Furthermore, the confinement is appreciably improved and the plasma becomes impermeable to hot neutrals. (orig.) [de

High repetition rate driver circuit for modulation of injection lasers

International Nuclear Information System (INIS)

Dornan, B.R.; Goel, J.; Wolkstein, H.J.

1981-01-01

An injection laser modulator comprises a self-biased field effect transistor (FET) and an injection laser to provide a quiescent state during which lasing of the injection laser occurs in response to a high repetition rate signal of pulse coded modulation (pcm). The modulator is d.c. coupled to an input pulse source of pcm rendering it compatible with an input pulse referenced to ground and not being subject to voltage level shifting of the input pulse. The modulator circuit in its preferred and alternate embodiments provides various arrangements for high impedance input and low impedance output matching. In addition, means are provided for adjusting the bias of the FET as well as the bias of the injection laser

Flexible asymmetric supercapacitors with high energy and high power density in aqueous electrolytes

Science.gov (United States)

Cheng, Yingwen; Zhang, Hongbo; Lu, Songtao; Varanasi, Chakrapani V.; Liu, Jie

2013-01-01

Supercapacitors with both high energy and high power densities are critical for many practical applications. In this paper, we discuss the design and demonstrate the fabrication of flexible asymmetric supercapacitors based on nanocomposite electrodes of MnO2, activated carbon, carbon nanotubes and graphene. The combined unique properties of each of these components enable highly flexible and mechanically strong films that can serve as electrodes directly without using any current collectors or binders. Using these flexible electrodes and a roll-up approach, asymmetric supercapacitors with 2 V working voltage were successfully fabricated. The fabricated device showed excellent rate capability, with 78% of the original capacitance retained when the scan rate was increased from 2 mV s-1 to 500 mV s-1. Owing to the unique composite structure, these supercapacitors were able to deliver high energy density (24 W h kg-1) under high power density (7.8 kW kg-1) conditions. These features could enable supercapacitor based energy storage systems to be very attractive for a variety of critical applications, such as the power sources in hybrid electric vehicles and the back-up powers for wind and solar energy, where both high energy density and high power density are required.Supercapacitors with both high energy and high power densities are critical for many practical applications. In this paper, we discuss the design and demonstrate the fabrication of flexible asymmetric supercapacitors based on nanocomposite electrodes of MnO2, activated carbon, carbon nanotubes and graphene. The combined unique properties of each of these components enable highly flexible and mechanically strong films that can serve as electrodes directly without using any current collectors or binders. Using these flexible electrodes and a roll-up approach, asymmetric supercapacitors with 2 V working voltage were successfully fabricated. The fabricated device showed excellent rate capability, with 78% of

Improvement of Short-Circuit Current Density in Dye-Sensitized Solar Cells Using Sputtered Nanocolumnar TiO2 Compact Layer

Directory of Open Access Journals (Sweden)

Lung-Chien Chen

2010-01-01

Full Text Available The effect of a nanocolumnar TiO2 compact layer in dye-sensitized solar cells (DSSCs was examined. Such a compact layer was sputtered on a glass substrate with an indium tin oxide (ITO film using TiO2 powder as the raw material, with a thickness of ~100 nm. The compact layer improved the short-circuit current density and the efficiency of conversion of solar energy to electricity by the DSSC by 53.37% and 59.34%, yielding values of 27.33 mA/cm2 and 9.21%, respectively. The performance was attributed to the effective electron pathways in the TiO2 compact layer, which reduced the back reaction by preventing direct contact between the redox electrolyte and the conductive substrate.

Electro-thermal modeling of high power IGBT module short-circuits with experimental validation

DEFF Research Database (Denmark)

Wu, Rui; Iannuzzo, Francesco; Wang, Huai

2015-01-01

A novel Insulated Gate Bipolar Transistor (IGBT) electro-thermal modeling approach involving PSpice and ANSYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current...

Superconducting high current magnetic Circuit: Design and Parameter Estimation of a Simulation Model

CERN Document Server

Kiefer, Alexander; Reich, Werner Dr

The Large Hadron Collider (LHC) utilizes superconducting main dipole magnets that bend the trajectory of the particle beams. In order to adjust the not completely homogeneous magnetic feld of the main dipole magnets, amongst others, sextupole correctcorrector magnets are used. In one of the 16 corrector magnet circuits placed in the LHC, 154 of these sextupole corrector magnets (MCS) are connected in series. This circuit extends on a 3.35 km tunnel section of the LHC. In 2015, at one of the 16 circuits a fault was detected. The simulation of this circuit is helpful for fnding the fault by applying alternating current at different frequencies. Within this Thesis a PSpice model for the simulation of the superconducting corrector magnet circuit was designed. The physical properties of the circuit and its elements were analyzed and implemented. For the magnets and bus-bars, sub-circuits were created which reflect the parasitic effects of electrodynamics and electrostats. The inductance values and capacitance valu...

Some recent efforts toward high density implosions

International Nuclear Information System (INIS)

McClellan, G.E.

1980-01-01

Some recent Livermore efforts towards achieving high-density implosions are presented. The implosion dynamics necessary to compress DT fuel to 10 to 100 times liquid density are discussed. Methods of diagnosing the maximum DT density for a specific design are presented along with results to date. The dynamics of the double-shelled target with an exploding outer shell are described, and some preliminary experimental results are presented

Improved GAMMA 10 tandem mirror confinement in high density plasma

International Nuclear Information System (INIS)

Yatsu, K.; Cho, T.; Higaki, H.; Hirata, M.; Hojo, H.; Ichimura, M.; Ishii, K.; Ishimoto, Y.; Itakura, A.; Katanuma, I.; Kohagura, J.; Minami, R.; Nakashima, Y.; Numakura, T.; Saito, T.; Saosaki, S.; Takemura, Y.; Tatematsu, Y.; Yoshida, M.; Yoshikawa, M.

2003-01-01

GAMMA 10 experiments have advanced in high density experiments after the last IAEA fusion energy conference in 2000 where we reported the production of the high density plasma through use of ion cyclotron range of frequency heating at a high harmonic frequency and neutral beam injection in the anchor cells. However, the diamagnetic signal of the plasma decreased when electron cyclotron resonance heating was applied for the potential formation. Recently a high density plasma has been obtained without degradation of the diamagnetic signal and with much improved reproducibility than before. The high density plasma was attained through adjustment of the spacing of the conducting plates installed in the anchor transition regions. The potential confinement of the plasma has been extensively studied. Dependences of the ion confinement time, ion-energy confinement time and plasma confining potential on plasma density were obtained for the first time in the high density region up to a density of 4x10 18 m -3 . (author)

Resonance circuits for adiabatic circuits

Directory of Open Access Journals (Sweden)

C. Schlachta

2003-01-01

Full Text Available One of the possible techniques to reduces the power consumption in digital CMOS circuits is to slow down the charge transport. This slowdown can be achieved by introducing an inductor in the charging path. Additionally, the inductor can act as an energy storage element, conserving the energy that is normally dissipated during discharging. Together with the parasitic capacitances from the circuit a LCresonant circuit is formed.

Electronic circuit for control rod attracting electromagnet

International Nuclear Information System (INIS)

Ito, Koji.

1991-01-01

The present invention provides a discharging circuit for control rod attracting electromagnet used for a reactor which is highly reliable and has high performance. The resistor of the circuit comprises a non-linear resistor element and a blocking rectification element connected in series. The discharging circuit can be prevented from short-circuit by selecting a resistor having a resistance value about ten times as great as the coil resistance, even in a case where the blocking rectification element and the non-linear resistor element are failed. Accordingly, reduction of attracting force and the increase of scream releasing time can be minimized. (I.S.)

High-density limit of quantum chromodynamics

International Nuclear Information System (INIS)

Alvarez, E.

1983-01-01

By means of a formal expansion of the partition function presumably valid at large baryon densities, the propagator of the quarks is expressed in terms of the gluon propagator. This result is interpreted as implying that correlations between quarks and gluons are unimportant at high enough density, so that a kind of mean-field approximation gives a very accurate description of the physical system

Current Trends in High-Level Synthesis of Asynchronous Circuits

DEFF Research Database (Denmark)

Sparsø, Jens

2009-01-01

This paper is a survey paper presenting what the author sees as two major and promising trends in the current research in CAD-tools and design-methods for asynchronous circuits. One branch of research builds on top of existing asynchronous CAD-tools that perform syntax directed translation, e...... a conventional synchronous circuit as the starting point, and then adds some form of handshake-based flow-control. One approach keeps the global clock and implements discrete-time asynchronous operation. Another approach substitutes the clocked registers by asynchronous handshake-registers, thus creating truly...

Fueling with edge recycling to high-density in DIII-D

Energy Technology Data Exchange (ETDEWEB)

Leonard, A.W., E-mail: leonard@fusion.gat.com [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States); Elder, J.D. [University of Toronto Institute of Aerospace Studies, Toronto, Canada M3H 5T6 (Canada); Canik, J.M. [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831 (United States); Groebner, R.J.; Osborne, T.H. [General Atomics, P.O. Box 85608, San Diego, CA 92186-5608 (United States)

2013-07-15

Pedestal fueling through edge recycling is examined with the interpretive OEDGE code for high-density discharges in DIII-D. A high current, high-density discharge is found to have a similar radial ion flux profile through the pedestal to a lower current, lower density discharge. The higher density discharge, however, has a greater density gradient indicating a pedestal particle diffusion coefficient that scales near linear with 1/I{sub p}. The time dependence of density profile is taken into account in the analysis of a discharge with low frequency ELMs. The time-dependent analysis indicates that the inferred neutral ionization source is inadequate to account for the increase in the density profile between ELMs, implying an inward density convection, or density pinch, near the top of the pedestal.

Integrating Neural Circuits Controlling Female Sexual Behavior.

Science.gov (United States)

Micevych, Paul E; Meisel, Robert L

2017-01-01

The hypothalamus is most often associated with innate behaviors such as is hunger, thirst and sex. While the expression of these behaviors important for survival of the individual or the species is nested within the hypothalamus, the desire (i.e., motivation) for them is centered within the mesolimbic reward circuitry. In this review, we will use female sexual behavior as a model to examine the interaction of these circuits. We will examine the evidence for a hypothalamic circuit that regulates consummatory aspects of reproductive behavior, i.e., lordosis behavior, a measure of sexual receptivity that involves estradiol membrane-initiated signaling in the arcuate nucleus (ARH), activating β-endorphin projections to the medial preoptic nucleus (MPN), which in turn modulate ventromedial hypothalamic nucleus (VMH) activity-the common output from the hypothalamus. Estradiol modulates not only a series of neuropeptides, transmitters and receptors but induces dendritic spines that are for estrogenic induction of lordosis behavior. Simultaneously, in the nucleus accumbens of the mesolimbic system, the mating experience produces long term changes in dopamine signaling and structure. Sexual experience sensitizes the response of nucleus accumbens neurons to dopamine signaling through the induction of a long lasting early immediate gene. While estrogen alone increases spines in the ARH, sexual experience increases dendritic spine density in the nucleus accumbens. These two circuits appear to converge onto the medial preoptic area where there is a reciprocal influence of motivational circuits on consummatory behavior and vice versa . While it has not been formally demonstrated in the human, such circuitry is generally highly conserved and thus, understanding the anatomy, neurochemistry and physiology can provide useful insight into the motivation for sexual behavior and other innate behaviors in humans.

Integrating Neural Circuits Controlling Female Sexual Behavior

Directory of Open Access Journals (Sweden)

Paul E. Micevych

2017-06-01

Full Text Available The hypothalamus is most often associated with innate behaviors such as is hunger, thirst and sex. While the expression of these behaviors important for survival of the individual or the species is nested within the hypothalamus, the desire (i.e., motivation for them is centered within the mesolimbic reward circuitry. In this review, we will use female sexual behavior as a model to examine the interaction of these circuits. We will examine the evidence for a hypothalamic circuit that regulates consummatory aspects of reproductive behavior, i.e., lordosis behavior, a measure of sexual receptivity that involves estradiol membrane-initiated signaling in the arcuate nucleus (ARH, activating β-endorphin projections to the medial preoptic nucleus (MPN, which in turn modulate ventromedial hypothalamic nucleus (VMH activity—the common output from the hypothalamus. Estradiol modulates not only a series of neuropeptides, transmitters and receptors but induces dendritic spines that are for estrogenic induction of lordosis behavior. Simultaneously, in the nucleus accumbens of the mesolimbic system, the mating experience produces long term changes in dopamine signaling and structure. Sexual experience sensitizes the response of nucleus accumbens neurons to dopamine signaling through the induction of a long lasting early immediate gene. While estrogen alone increases spines in the ARH, sexual experience increases dendritic spine density in the nucleus accumbens. These two circuits appear to converge onto the medial preoptic area where there is a reciprocal influence of motivational circuits on consummatory behavior and vice versa. While it has not been formally demonstrated in the human, such circuitry is generally highly conserved and thus, understanding the anatomy, neurochemistry and physiology can provide useful insight into the motivation for sexual behavior and other innate behaviors in humans.

Tesla’s high voltage and high frequency generators with oscillatory circuits

Directory of Open Access Journals (Sweden)

Cvetić Jovan M.

2016-01-01

Full Text Available The principles that represent the basics of the work of the high voltage and high frequency generator with oscillating circuits will be discussed. Until 1891, Tesla made and used mechanical generators with a large number of extruded poles for the frequencies up to about 20 kHz. The first electric generators based on a new principle of a weakly coupled oscillatory circuits he used for the wireless signal transmission, for the study of the discharges in vacuum tubes, the wireless energy transmission, for the production of the cathode rays, that is x-rays and other experiments. Aiming to transfer the signals and the energy to any point of the surface of the Earth, in the late of 19th century, he had discovered and later patented a new type of high frequency generator called a magnifying transmitter. He used it to examine the propagation of electromagnetic waves over the surface of the Earth in experiments in Colorado Springs in the period 1899-1900. Tesla observed the formation of standing electromagnetic waves on the surface of the Earth by measuring radiated electric field from distant lightning thunderstorm. He got the idea to generate the similar radiation to produce the standing waves. On the one hand, signal transmission, i.e. communication at great distances would be possible and on the other hand, with more powerful and with at least three magnifying transmitters the wireless transmission of energy without conductors at any point of the Earth surface could also be achieved. The discovery of the standing waves on the surface of the Earth and the invention of the magnifying transmitter he claimed his greatest inventions. Less than two years later, at the end of 1901, he designed and started to build a much stronger magnifying transmitter on Long Island near New York City (the Wardenclyffe tower wishing to become a world telecommunication center. During the tower construction, he elaborated the plans for an even stronger transmitter based on

Active components for integrated plasmonic circuits

DEFF Research Database (Denmark)

Krasavin, A.V.; Bolger, P.M.; Zayats, A.V.

2009-01-01

We present a comprehensive study of highly efficient and compact passive and active components for integrated plasmonic circuit based on dielectric-loaded surface plasmon polariton waveguides.......We present a comprehensive study of highly efficient and compact passive and active components for integrated plasmonic circuit based on dielectric-loaded surface plasmon polariton waveguides....

Low density, variation in sintered density and high nitrogen in uranium dioxide

International Nuclear Information System (INIS)

Balakrishna, Palanki; Murty, B.N.; Anuradha, M.; Nageshwara Rao, P.; Jayaraj, R.N.; Ganguly, C.

2000-01-01

Low sintered density and density variation in sintered UO 2 were found to have been caused by non uniformity in the granule feed characteristics to the compacting press. The nitrogen impurity content of sintered UO 2 was found to be sintering furnace related and associated with low sintered density pellets. The problems of low density, variation in sintered density and high nitrogen could be solved by the replacement of the prevailing four punch precompaction by a single punch process; by the introduction of a vibro-sieve for the separation of fine particles from the press feed granules; by innovation in the powder feed shoe design for simultaneous and uniform dispensing of powder in all the die holes; by increasing the final compaction pressure and by modifying the gas flows and preheat temperature in the sintering furnace. (author)

Logic-type Schmitt circuit using multi-valued gates

Science.gov (United States)

Wakui, M.; Tanaka, M.

Logic-type Schmitt circuits (LTSCs) proposed in this paper by author's proposal are a new detector for a multi-valued multi-threshold logic circuit, and it realizes the high resolution with a little hysteresis or the high noise margin. The detector consists of the combinations of the multi-valued gates (MVGs) and a positive reaction device (PRD), and each circuit can be realized by the conventional elements. This paper shows their practical circuits, and describes the regions and the conditions for their operation.

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

Science.gov (United States)

Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

2018-01-01

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

Magnetic Circuit Design and Multiphysics Analysis of a Novel MR Damper for Applications under High Velocity

Directory of Open Access Journals (Sweden)

Jiajia Zheng

2014-02-01

Full Text Available A novel magnetorheological (MR damper with a multistage piston and independent input currents is designed and analyzed. The equivalent magnetic circuit model is investigated along with the relation between magnetic induction density in the working gap and input currents of the electromagnetic coils. Finite element method (FEM is used to analyze the distribution of magnetic field through the MR fluid region. Considering the real situation, coupling equations are presented to analyze the electromagnetic-thermal-flow coupling problems. Software COMSOL is used to analyze the multiphysics, that is, electromagnetic, thermal dynamic, and fluid mechanic. A measurement index involving total damping force, dynamic range, and induction time needed for magnetic coil is put forward to evaluate the performance of the novel multistage MR damper. The simulation results show that it is promising for applications under high velocity and works better when more electromagnetic coils are applied with input currents separately. Besides, in order to reduce energy consumption, it is recommended to apply more electromagnetic coils with relative low currents based on the analysis of pressure drop along the annular gap.

30 CFR 75.800-1 - Circuit breakers; location.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Circuit breakers; location. 75.800-1 Section 75.800-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY... § 75.800-1 Circuit breakers; location. Circuit breakers protecting high-voltage circuits entering an...

High throughput nonparametric probability density estimation.

Science.gov (United States)

Farmer, Jenny; Jacobs, Donald

2018-01-01

In high throughput applications, such as those found in bioinformatics and finance, it is important to determine accurate probability distribution functions despite only minimal information about data characteristics, and without using human subjectivity. Such an automated process for univariate data is implemented to achieve this goal by merging the maximum entropy method with single order statistics and maximum likelihood. The only required properties of the random variables are that they are continuous and that they are, or can be approximated as, independent and identically distributed. A quasi-log-likelihood function based on single order statistics for sampled uniform random data is used to empirically construct a sample size invariant universal scoring function. Then a probability density estimate is determined by iteratively improving trial cumulative distribution functions, where better estimates are quantified by the scoring function that identifies atypical fluctuations. This criterion resists under and over fitting data as an alternative to employing the Bayesian or Akaike information criterion. Multiple estimates for the probability density reflect uncertainties due to statistical fluctuations in random samples. Scaled quantile residual plots are also introduced as an effective diagnostic to visualize the quality of the estimated probability densities. Benchmark tests show that estimates for the probability density function (PDF) converge to the true PDF as sample size increases on particularly difficult test probability densities that include cases with discontinuities, multi-resolution scales, heavy tails, and singularities. These results indicate the method has general applicability for high throughput statistical inference.

Flexible Semitransparent Energy Harvester with High Pressure Sensitivity and Power Density Based on Laterally Aligned PZT Single-Crystal Nanowires.

Science.gov (United States)

Zhao, Quan-Liang; He, Guang-Ping; Di, Jie-Jian; Song, Wei-Li; Hou, Zhi-Ling; Tan, Pei-Pei; Wang, Da-Wei; Cao, Mao-Sheng

2017-07-26

A flexible semitransparent energy harvester is assembled based on laterally aligned Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) single-crystal nanowires (NWs). Such a harvester presents the highest open-circuit voltage and a stable area power density of up to 10 V and 0.27 μW/cm 2 , respectively. A high pressure sensitivity of 0.14 V/kPa is obtained in the dynamic pressure sensing, much larger than the values reported in other energy harvesters based on piezoelectric single-crystal NWs. Furthermore, theoretical and finite element analyses also confirm that the piezoelectric voltage constant g 33 of PZT NWs is competitive to the lead-based bulk single crystals and ceramics, and the enhanced pressure sensitivity and power density are substantially linked to the flexible structure with laterally aligned PZT NWs. The energy harvester in this work holds great potential in flexible and transparent sensing and self-powered systems.

Micro-circuits for high energy physics

International Nuclear Information System (INIS)

Kunz, P.F.

1978-01-01

Microprogramming is an inherently elegant method for implementing many digital systems. It is a mixture of hardware and software techniques with the logic subsystems controlled by 'instructions' stored in a memory. In the past, designing microprogrammed systems was difficult, tedious, and expensive because the available components were capable of only limited number of functions. Today, however, large blocks of microprogrammed systems have been incorporated into a single integrated circuit, thus microprogramming has become a simple, practical method. (Auth.)

Highly efficient red electrophosphorescent devices at high current densities

International Nuclear Information System (INIS)

Wu Youzhi; Zhu Wenqing; Zheng Xinyou; Sun, Runguang; Jiang Xueyin; Zhang Zhilin; Xu Shaohong

2007-01-01

Efficiency decrease at high current densities in red electrophosphorescent devices is drastically restrained compared with that from conventional electrophosphorescent devices by using bis(2-methyl-8-quinolinato)4-phenylphenolate aluminum (BAlq) as a hole and exciton blocker. Ir complex, bis(2-(2'-benzo[4,5-α]thienyl) pyridinato-N,C 3' ) iridium (acetyl-acetonate) is used as an emitter, maximum external quantum efficiency (QE) of 7.0% and luminance of 10000cd/m 2 are obtained. The QE is still as high as 4.1% at higher current density J=100mA/cm 2 . CIE-1931 co-ordinates are 0.672, 0.321. A carrier trapping mechanism is revealed to dominate in the process of electroluminescence

Project Circuits in a Basic Electric Circuits Course

Science.gov (United States)

Becker, James P.; Plumb, Carolyn; Revia, Richard A.

2014-01-01

The use of project circuits (a photoplethysmograph circuit and a simple audio amplifier), introduced in a sophomore-level electric circuits course utilizing active learning and inquiry-based methods, is described. The development of the project circuits was initiated to promote enhanced engagement and deeper understanding of course content among…

Design of Low-Complexity and High-Speed Coplanar Four-Bit Ripple Carry Adder in QCA Technology

Science.gov (United States)

Balali, Moslem; Rezai, Abdalhossein

2018-03-01

Quantum-dot Cellular Automata (QCA) technology is a suitable technology to replace CMOS technology due to low-power consumption, high-speed and high-density devices. Full adder has an important role in the digital circuit design. This paper presents and evaluates a novel single-layer four-bit QCA Ripple Carry Adder (RCA) circuit. The developed four-bit QCA RCA circuit is based on novel QCA full adder circuit. The developed circuits are simulated using QCADesigner tool version 2.0.3. The simulation results show that the developed circuits have advantages in comparison with existing single-layer and multilayer circuits in terms of cell count, area occupation and circuit latency.

Graphene radio frequency receiver integrated circuit.

Science.gov (United States)

Han, Shu-Jen; Garcia, Alberto Valdes; Oida, Satoshi; Jenkins, Keith A; Haensch, Wilfried

2014-01-01

Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and downconversion mixing. All circuit components are integrated into 0.6 mm(2) area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.

Fundamental properties of high-quality carbon nanofoam: from low to high density

Directory of Open Access Journals (Sweden)

Natalie Frese

2016-12-01

Full Text Available Highly uniform samples of carbon nanofoam from hydrothermal sucrose carbonization were studied by helium ion microscopy (HIM, X-ray photoelectron spectroscopy (XPS, and Raman spectroscopy. Foams with different densities were produced by changing the process temperature in the autoclave reactor. This work illustrates how the geometrical structure, electron core levels, and the vibrational signatures change when the density of the foams is varied. We find that the low-density foams have very uniform structure consisting of micropearls with ≈2–3 μm average diameter. Higher density foams contain larger-sized micropearls (≈6–9 μm diameter which often coalesced to form nonspherical μm-sized units. Both, low- and high-density foams are comprised of predominantly sp2-type carbon. The higher density foams, however, show an advanced graphitization degree and a stronger sp3-type electronic contribution, related to the inclusion of sp3 connections in their surface network.

Sputtered thin films for high density tape recording

NARCIS (Netherlands)

Nguyen, L.T.

This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

High-density housing that works for all

Energy Technology Data Exchange (ETDEWEB)

Hasan, Arif

2010-03-15

In an urbanising world, the way people fit into cities is vastly important - socially, economically, environmentally, even psychologically. So density, or the number of people living in a given area, is central to urban design and planning. Both governments and markets tend to get density wrong, leading to overcrowding, urban sprawl or often both. A case in point are the high-rise buildings springing up throughtout urban Asia - perceived as key features of that widely touted concept, the 'world-class city'. While some may offer a viable solution to land pressures and density requirements, many built to house evicted or resettled 'slum' dwellers are a social and economic nightmare - inconveniently sited, overcrowded and costly. New evidence from Karachi, Pakistan, reveals a real alternative. Poor people can create liveable high-density settlements as long as community control, the right technical assistance and flexible designs are in place. A city is surely 'world-class' only when it is cosmopolitan – built to serve all, including the poorest.

Simulation of high SNR photodetector with L-C coupling and transimpedance amplifier circuit and its verification

Science.gov (United States)

Wang, Shaofeng; Xiang, Xiao; Zhou, Conghua; Zhai, Yiwei; Quan, Runai; Wang, Mengmeng; Hou, Feiyan; Zhang, Shougang; Dong, Ruifang; Liu, Tao

2017-01-01

In this paper, a model for simulating the optical response and noise performances of photodetectors with L-C coupling and transimpedance amplification circuit is presented. To verify the simulation, two kinds of photodetectors, which are based on the same printed-circuit-board (PCB) designing and PIN photodiode but different operational amplifiers, are developed and experimentally investigated. Through the comparisons between the numerical simulation results and the experimentally obtained data, excellent agreements are achieved, which show that the model provides a highly efficient guide for the development of a high signal to noise ratio photodetector. Furthermore, the parasite capacitances on the developed PCB, which are always hardly measured but play a non-negligible influence on the photodetectors' performances, are estimated.

High density high performance plasma with internal diffusion barrier in Large Helical Device

International Nuclear Information System (INIS)

Sakamoto, R.; Kobayashi, M.; Miyazawa, J.

2008-10-01

A attractive high density plasma operational regime, namely an internal diffusion barrier (IDB), has been discovered in the intrinsic helical divertor configuration on the Large Helical Device (LHD). The IDB which enables core plasma to access a high density/high pressure regime has been developed. It is revealed that the IDB is reproducibly formed by pellet fueling in the magnetic configurations shifted outward in major radius. Attainable central plasma density exceeds 1x10 21 m -3 . Central pressure reaches 1.5 times atmospheric pressure and the central β value becomes fairly high even at high magnetic field, i.e. β(0)=5.5% at B t =2.57 T. (author)

New circuits high-voltage pulse generators with inductive-capacitive energy storage

International Nuclear Information System (INIS)

Gordeev, V.S.; Myskov, G.A.

2001-01-01

The paper describes new electric circuits of multi-cascade generators based on stepped lines. The distinction of the presented circuits consists in initial storage of energy in electric and magnetic fields simultaneously. The circuit of each generator,relations of impedances,values of initial current and charge voltages are selected in such a manner that the whole of initially stored energy is concentrated at the generator output as a result of transient wave processes. In ideal case the energy is transferred with 100% efficiency to the resistive load where a rectangular voltage pulse is formed, whose duration is equals to the double electrical length of the individual cascade. At the same time there is realized a several time increase of output voltage as compared to the charge voltage of the generator. The use of the circuits proposed makes it possible to ensure a several time increase (as compared to the selection of the number of cascades) of the generator energy storage, pulse current and output electric power

GaAs Photonic Integrated Circuit (PIC) development for high performance communications

Energy Technology Data Exchange (ETDEWEB)

Sullivan, C.T.

1998-03-01

Sandia has established a foundational technology in photonic integrated circuits (PICs) based on the (Al,Ga,In)As material system for optical communication, radar control and testing, and network switching applications at the important 1.3{mu}m/1.55{mu}m wavelengths. We investigated the optical, electrooptical, and microwave performance characteristics of the fundamental building-block PIC elements designed to be as simple and process-tolerant as possible, with particular emphasis placed on reducing optical insertion loss. Relatively conventional device array and circuit designs were built using these PIC elements: (1) to establish a baseline performance standard; (2) to assess the impact of epitaxial growth accuracy and uniformity, and of fabrication uniformity and yield; (3) to validate our theoretical and numerical models; and (4) to resolve the optical and microwave packaging issues associated with building fully packaged prototypes. Novel and more complex PIC designs and fabrication processes, viewed as higher payoff but higher risk, were explored in a parallel effort with the intention of meshing those advances into our baseline higher-yield capability as they mature. The application focus targeted the design and fabrication of packaged solitary modulators meeting the requirements of future wideband and high-speed analog and digital data links. Successfully prototyped devices are expected to feed into more complex PICs solving specific problems in high-performance communications, such as optical beamforming networks for phased array antennas.

High density data recording for SSCL linac

International Nuclear Information System (INIS)

VanDeusen, A.L.; Crist, C.

1993-01-01

The Superconducting Super Collider Laboratory and AlliedSignal Aerospace have collaboratively developed a high density data monitoring system for beam diagnostic activities. The 128 channel data system is based on a custom multi-channel high speed digitizer card for the VXI bus. The card is referred to as a Modular Input VXI (MIX) digitizer. Multiple MIX cards are used in the complete system to achieve the necessary high channel density requirements. Each MIX digitizer card also contains programmable signal conditioning, and enough local memory to complete an entire beam scan without assistance from the host processor

Thermionic integrated circuit technology for high power space applications

International Nuclear Information System (INIS)

Yadavalli, S.R.

1984-01-01

Thermionic triode and integrated circuit technology is in its infancy and it is emerging. The Thermionic triode can operate at relatively high voltages (up to 2000V) and at least tens of amperes. These devices, including their use in integrated circuitry, operate at high temperatures (800 0 C) and are very tolerant to nuclear and other radiations. These properties can be very useful in large space power applications such as that represented by the SP-100 system which uses a nuclear reactor. This paper presents an assessment of the application of thermionic integrated circuitry with space nuclear power system technology. A comparison is made with conventional semiconductor circuitry considering a dissipative shunt regulator for SP-100 type nuclear power system rated at 100 kW. The particular advantages of thermionic circuitry are significant reductions in size and mass of heat dissipation and radiation shield subsystems

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

International Nuclear Information System (INIS)

Altamore, C; Tringali, C; Sparta', N; Marco, S Di; Grasso, A; Ravesi, S

2010-01-01

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10 5 ) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10 1 Hz to 10 6 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl 2 /Ar chemistry. The relationship between the etch rate and the Cl 2 /Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl 2 /Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

Energy Technology Data Exchange (ETDEWEB)

Altamore, C; Tringali, C; Sparta' , N; Marco, S Di; Grasso, A; Ravesi, S [STMicroelectronics, Industial and Multi-segment Sector R and D, Catania (Italy)

2010-02-15

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10{sup 5}) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10{sup 1} Hz to 10{sup 6} Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl{sub 2}/Ar chemistry. The relationship between the etch rate and the Cl{sub 2}/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl{sub 2}/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit.

Science.gov (United States)

Chakrabarti, B; Lastras-Montaño, M A; Adam, G; Prezioso, M; Hoskins, B; Payvand, M; Madhavan, A; Ghofrani, A; Theogarajan, L; Cheng, K-T; Strukov, D B

2017-02-14

Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore's law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + "Molecular") architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.

Compensated readout for high-density MOS-gated memristor crossbar array

KAUST Repository

Zidan, Mohammed A.

2015-01-01

Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.

Circuit Training.

Science.gov (United States)

Nelson, Jane B.

1998-01-01

Describes a research-based activity for high school physics students in which they build an LC circuit and find its resonant frequency of oscillation using an oscilloscope. Includes a diagram of the apparatus and an explanation of the procedures. (DDR)

The Effect of Current-Limiting Reactors on the Tripping of Short Circuits in High-Voltage Electrical Equipment

International Nuclear Information System (INIS)

Volkov, M. S.; Gusev, Yu. P.; Monakov, Yu. V.; Cho, Gvan Chun

2016-01-01

The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limiting resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed

Numerical analysis of energy density and particle density in high energy heavy-ion collisions

International Nuclear Information System (INIS)

Fu Yuanyong; Lu Zhongdao

2004-01-01

Energy density and particle density in high energy heavy-ion collisions are calculated with infinite series expansion method and Gauss-Laguerre formulas in numerical integration separately, and the results of these two methods are compared, the higher terms and linear terms in series expansion are also compared. The results show that Gauss-Laguerre formulas is a good method in calculations of high energy heavy-ion collisions. (author)

Four-terminal circuit element with photonic core

Science.gov (United States)

Sampayan, Stephen

2017-08-29

A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated based on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.

Effects of surface states on device and interconnect isolation in GaAs MESFET and InP MISFET integrated circuits

International Nuclear Information System (INIS)

Hasegawa, H.; Kitagawa, T.; Masuda, H.; Yano, H.; Ohno, H.

1985-01-01

Surface electrical breakdown and side-gating which cause failure of device and interconnect isolation are investigated for GaAs MESFET and InP MISFET integrated circuit structures. Striking differences in behavior are observed between GaAs and InP as regards to the surface conduction, surface breakdown and side-gating. These differences are shown to be related to the surface state properties of the insulator-semiconductor interface. In GaAs, high density of surface states rather than bulk trap states control the surface I-V characteristics and side-gating, causing serious premature avalanche breakdown and triggering side-gating at a low nominal field intensity of 1-3 kV/cm. On the other hand, InP MISFET integrated circuits are virtually free from these premature breakdown and side-gating effect under normal dark operating condition because of very low surface state density

A Robust High-Performance GPS L1 Receiver with Single-stage Quadrature Redio-Frequency Circuit

Science.gov (United States)

Liu, Jianghua; Xu, Weilin; Wan, Qinq; Liu, Tianci

2018-03-01

A low power current reuse single-stage quadrature raido-frequency part (SQRF) is proposed for GPS L1 receiver in 180nm CMOS process. The proposed circuit consists of LNA, Mixer, QVCO, is called the QLMV cell. A two blocks stacked topology is adopted in this design. The parallel QVCO and mixer placed on the top forms the upper stacked block, and the LNA placed on the bottom forms the other stacked block. The two blocks share the current and achieve low power performance. To improve the stability, a float current source is proposed. The float current isolated the local oscillation signal and the input RF signal, which bring the whole circuit robust high-performance. The result shows conversion gain is 34 dB, noise figure is three dB, the phase noise is -110 dBc/Hz at 1MHz and IIP3 is -20 dBm. The proposed circuit dissipated 1.7mW with 1 V supply voltage.

Two color interferometric electron density measurement in an axially blown arc

Science.gov (United States)

Stoller, Patrick; Carstensen, Jan; Galletti, Bernardo; Doiron, Charles; Sokolov, Alexey; Salzmann, René; Simon, Sandor; Jabs, Philipp

2016-09-01

High voltage circuit breakers protect the power grid by interrupting the current in case of a short circuit. To do so an arc is ignited between two contacts as they separate; transonic gas flow is used to cool and ultimately extinguish the arc at a current-zero crossing of the alternating current. A detailed understanding of the arc interruption process is needed to improve circuit breaker design. The conductivity of the partially ionized gas remaining after the current-zero crossing, a key parameter in determining whether the arc will be interrupted or not, is a function of the electron density. The electron density, in turn, is a function of the detailed dynamics of the arc cooling process, which does not necessarily occur under local thermodynamic equilibrium (LTE) conditions. In this work, we measure the spatially resolved line-integrated index of refraction in a near-current-zero arc stabilized in an axial flow of synthetic air with two nanosecond pulsed lasers at wavelengths of 532 nm and 671 nm. Generating a stable, cylindrically symmetric arc enables us to determine the three-dimensional index of refraction distribution using Abel inversion. Due to the wavelength dependence of the component of the index of refraction related to the free electrons, the information at two different wavelengths can be used to determine the electron density. This information allows us to determine how important it is to take into account non-equilibrium effects for accurate modeling of the physics of decaying arcs.

Two dimensional analysis of MHD generator by means of equivalent circuit

International Nuclear Information System (INIS)

Yoshida, Masaharu; Umoto, Juro

1975-01-01

The authors report on the method analyzing generally the MHD generator by means of the equivalent circuit including the negative resistance. At first, they divide the duct space into many space elements, and for each space element they derive the fundamental equivalent four-terminal circuit which satisfies the two-dimensional Ohm's law. Next, they make an attempt to apply the equivalent circuits to the typical MHD generators such as diagonal, Faraday and Hall generators considering the boundary layer in the duct and the wall leakage current. Using their analysis, the current density, Joul's heat, generated and output electrical powers, electrical efficiency etc. in the generator can be fairly easily calculated. (auth.)

Development of High-Field Permanent Magnetic Circuits for NMRI/MRI and Imaging on Mice

Directory of Open Access Journals (Sweden)

Guangxin Wang

2016-01-01

Full Text Available The high-field permanent magnetic circuits of 1.2 T and 1.5 T with novel magnetic focusing and curved-surface correction are developed. The permanent magnetic circuit comprises a magnetic yoke, main magnetic steel, nonspherical curved-surface magnetic poles, plugging magnetic steel, and side magnetic steel. In this work, a novel shimming method is proposed for the effective correction of base magnetic field (B0 inhomogeneities, which is based on passive shimming on the telescope aspheric cutting, grinding, and fine processing technology of the nonspherical curved-surface magnetic poles and active shimming adding higher-order gradient coils. Meanwhile, the magnetic resonance imaging dedicated alloy with high-saturation magnetic field induction intensity and high electrical resistivity is developed, and nonspherical curved-surface magnetic poles which are made of the dedicated alloy have very good anti-eddy-current effect. In addition, the large temperature coefficient problem of permanent magnet can be effectively controlled by using a high quality temperature controller and deuterium external locking technique. Combining our patents such as gradient coil, RF coil, and integration computer software, two kinds of small animal Micro-MRI instruments are developed, by which the high quality MRI images of mice were obtained.

High density regimes and beta limits in JET

International Nuclear Information System (INIS)

Smeulders, P.

1990-01-01

Results are first presented on the density limit in JET discharges with graphite (C), Be gettered graphite and Be limiters. There is a clear improvement in the case of Be limiters. The Be gettered phase showed no increase in the gas fueled density limit, except with Ion Cyclotron Resonance Heating (ICRH), but, the limit changed character. During MARFE-formation, any further increase in density was prevented, leading to a soft density limit. The soft density limit was a function of input power and impurity content with a week dependence on q. Helium and pellet fuelled discharges exceeded the gas-fuelled global density limits, but essentially had the same edge limit. In the second part, results are presented of high β operation in low-B Double-Null (DN) X-point configurations with Be-gettered carbon target plates. The Troyon limit was reached during H-mode discharges and toroidal β values of 5.5% were obtained. At high beta, the sawteeth were modified and characterised by very rapid heat-waves and fishbone-like pre- and post-cursors with strongly ballooning character. 17 refs., 5 figs

The use of low density high accuracy (LDHA) data for correction of high density low accuracy (HDLA) point cloud

Science.gov (United States)

Rak, Michal Bartosz; Wozniak, Adam; Mayer, J. R. R.

2016-06-01

Coordinate measuring techniques rely on computer processing of coordinate values of points gathered from physical surfaces using contact or non-contact methods. Contact measurements are characterized by low density and high accuracy. On the other hand optical methods gather high density data of the whole object in a short time but with accuracy at least one order of magnitude lower than for contact measurements. Thus the drawback of contact methods is low density of data, while for non-contact methods it is low accuracy. In this paper a method for fusion of data from two measurements of fundamentally different nature: high density low accuracy (HDLA) and low density high accuracy (LDHA) is presented to overcome the limitations of both measuring methods. In the proposed method the concept of virtual markers is used to find a representation of pairs of corresponding characteristic points in both sets of data. In each pair the coordinates of the point from contact measurements is treated as a reference for the corresponding point from non-contact measurement. Transformation enabling displacement of characteristic points from optical measurement to their match from contact measurements is determined and applied to the whole point cloud. The efficiency of the proposed algorithm was evaluated by comparison with data from a coordinate measuring machine (CMM). Three surfaces were used for this evaluation: plane, turbine blade and engine cover. For the planar surface the achieved improvement was of around 200 μm. Similar results were obtained for the turbine blade but for the engine cover the improvement was smaller. For both freeform surfaces the improvement was higher for raw data than for data after creation of mesh of triangles.

High energy density capacitors fabricated by thin film technology

International Nuclear Information System (INIS)

Barbee, T W; Johnson, G W; Wagner, A V.

1999-01-01

Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

HIGH DENSITY QCD WITH HEAVY-IONS

CERN Multimedia

The Addendum 1 to Volume 2 of the CMS Physics TDR has been published The Heavy-Ion analysis group completed the writing of a TDR summarizing the CMS plans in using heavy ion collisions to study high density QCD. The document was submitted to the LHCC in March and presented in the Open Session of the LHCC on May 9th. The study of heavy-ion physics at the LHC is promising to be very exciting. LHC will open a new energy frontier in ultra-relativistic heavy-ion physics. The collision energy of heavy nuclei at sNN = 5.5 TeV will be thirty times larger than what is presently available at RHIC. We will certainly probe quark and gluon matter at unprecedented values of energy density. The prime goal of this research programme is to study the fundamental theory of the strong interaction - Quantum Chromodynamics (QCD) - in extreme conditions of temperature, density and parton momentum fraction (low-x). Such studies, with impressive experimental and theoretical advances in recent years thanks to the wealth of high-qua...

An x-ray backlit Talbot-Lau deflectometer for high-energy-density electron density diagnostics

Science.gov (United States)

Valdivia, M. P.; Stutman, D.; Stoeckl, C.; Theobald, W.; Mileham, C.; Begishev, I. A.; Bromage, J.; Regan, S. P.

2016-02-01

X-ray phase-contrast techniques can measure electron density gradients in high-energy-density plasmas through refraction induced phase shifts. An 8 keV Talbot-Lau interferometer consisting of free standing ultrathin gratings was deployed at an ultra-short, high-intensity laser system using K-shell emission from a 1-30 J, 8 ps laser pulse focused on thin Cu foil targets. Grating survival was demonstrated for 30 J, 8 ps laser pulses. The first x-ray deflectometry images obtained under laser backlighting showed up to 25% image contrast and thus enabled detection of electron areal density gradients with a maximum value of 8.1 ± 0.5 × 1023 cm-3 in a low-Z millimeter sized sample. An electron density profile was obtained from refraction measurements with an error of x-ray source-size, similar to conventional radiography.

Chapter 7: High-Density H-Mode Operation in ASDEX Upgrade

International Nuclear Information System (INIS)

Stober, Joerg Karl; Lang, Peter Thomas; Mertens, Vitus

2003-01-01

Recent results are reported on the maximum achievable H-mode density and the behavior of pedestal density and central density peaking as this limit is approached. The maximum achievable H-mode density roughly scales as the Greenwald density, though a dependence on B t is clearly observed. In contrast to the stiff temperature profiles, the density profiles seem to allow more shape variation and especially with high-field-side pellet-injection, strongly peaked profiles with good confinement have been achieved. Also, spontaneous density peaking at high densities is observed in ASDEX Upgrade, which is related to the generally observed large time constants for the density profile equilibration. The equilibrated density profile shapes depend strongly on the heat-flux profile in the sense that central heating leads to significantly flatter profiles

Design of a High Performance Green-Mode PWM Controller IC with Smart Sensing Protection Circuits

Directory of Open Access Journals (Sweden)

Shen-Li Chen

2014-08-01

Full Text Available A design of high performance green-mode pulse-width-modulation (PWM controller IC with smart sensing protection circuits for the application of lithium-ion battery charger (1.52 V ~ 7.5 V is investigated in this paper. The protection circuits architecture of this system mainly bases on the lithium battery function and does for the system design standard of control circuit. In this work, the PWM controller will be with an automatic load sensing and judges the system operated in the operating mode or in the standby mode. Therefore, it reduces system’s power dissipation effectively and achieves the saving power target. In the same time, many protection sensing circuits such as: (1 over current protection (OCP and under current protection (UCP, (2 over voltage protection (OVP and under voltage protection (UVP, (3 loading determintion and short circuit protection (SCP, (4 over temperature protection (OTP, (5 VDD surge-spiking protection are included. Then, it has the characteristics of an effective monitoring the output loading and the harm prevention as a battery charging. Eventually, this green-mode pulse-width-modulation (PWM controller IC will be that the operation voltage is 3.3 V, the operation frequency is 0.98 MHz, and the output current range is from 454 mA to 500 mA. Meanwhile, the output convert efficiency is range from 74.8 % to 91 %, the power dissipation efficiency in green-mode is 25 %, and the operation temperature range is between -20 0C ~ 114 0C.

Experimental study of high density foods for the Space Operations Center

Science.gov (United States)

Ahmed, S. M.

1981-01-01

The experimental study of high density foods for the Space Operations Center is described. A sensory evaluation of the high density foods was conducted first to test the acceptability of the products. A shelf-life study of the high density foods was also conducted for three different time lengths at three different temperatures. The nutritional analysis of the high density foods is at present incomplete.

High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

NARCIS (Netherlands)

Houin, G.J.R.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

2016-01-01

The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance

Single-event transients (SET) in analog circuits

International Nuclear Information System (INIS)

Chen Panxun; Zhou Kaiming

2006-01-01

A new phenomenon of single- event upset is introduced. The transient signal is produced in the output of analog circuits after a heavy ion strikes. The transient upset can influence the circuit connected with the output of analog circuits. For example, the output of operational amplifier can be connected with the input of a digital counter, and the pulse of sufficiently high transient output induced by an ion can increase counts of the counter. On the other hand, the transient voltage signal at the output of analog circuits can change the stage of other circuits. (authors)

Fluorescent Fe K Emission from High Density Accretion Disks

Science.gov (United States)

Bautista, Manuel; Mendoza, Claudio; Garcia, Javier; Kallman, Timothy R.; Palmeri, Patrick; Deprince, Jerome; Quinet, Pascal

2018-06-01

Iron K-shell lines emitted by gas closely orbiting black holes are observed to be grossly broadened and skewed by Doppler effects and gravitational redshift. Accordingly, models for line profiles are widely used to measure the spin (i.e., the angular momentum) of astrophysical black holes. The accuracy of these spin estimates is called into question because fitting the data requires very high iron abundances, several times the solar value. Meanwhile, no plausible physical explanation has been proffered for why these black hole systems should be so iron rich. The most likely explanation for the super-solar iron abundances is a deficiency in the models, and the leading candidate cause is that current models are inapplicable at densities above 1018 cm-3. We study the effects of high densities on the atomic parameters and on the spectral models for iron ions. At high densities, Debye plasma can affect the effective atomic potential of the ions, leading to observable changes in energy levels and atomic rates with respect to the low density case. High densities also have the effec of lowering energy the atomic continuum and reducing the recombination rate coefficients. On the spectral modeling side, high densities drive level populations toward a Boltzman distribution and very large numbers of excited atomic levels, typically accounted for in theoretical spectral models, may contribute to the K-shell spectrum.

Grounding and shielding circuits and interference

CERN Document Server

Morrison, Ralph

2016-01-01

Applies basic field behavior in circuit design and demonstrates how it relates to grounding and shielding requirements and techniques in circuit design This book connects the fundamentals of electromagnetic theory to the problems of interference in all types of electronic design. The text covers power distribution in facilities, mixing of analog and digital circuitry, circuit board layout at high clock rates, and meeting radiation and susceptibility standards. The author examines the grounding and shielding requirements and techniques in circuit design and applies basic physics to circuit behavior. The sixth edition of this book has been updated with new material added throughout the chapters where appropriate. The presentation of the book has also been rearranged in order to reflect the current trends in the field.

Phenomenology of high density disruptions in the TFTR tokamak

International Nuclear Information System (INIS)

Fredrickson, E.D.; McGuire, K.M.; Bell, M.G.

1993-01-01

Studies of high density disruptions on TFTR, including a comparison of minor and major disruptions at high density, provide important new information regarding the nature of the disruption mechanism. Further, for the first time, an (m,n)=(1,1) 'cold bubble' precursor to high density disruptions has been experimentally observed in the electron temperature profile. The precursor to major disruptions resembles the 'vacuum bubble' model of disruptions first proposed by B.B. Kadomtsev and O.P. Pogutse (Sov. Phys. - JETP 38 (1974) 283). (author). Letter-to-the-editor. 25 refs, 3 figs

High Energy Density Polymer Film Capacitors

National Research Council Canada - National Science Library

Boufelfel, Ali

2006-01-01

High-energy-density capacitors that are compact and light-weight are extremely valuable in a number of critical DoD systems that include portable field equipment, pulsed lasers, detection equipment...

Junction and circuit fabrication

International Nuclear Information System (INIS)

Jackel, L.D.

1980-01-01

Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

Improvement of diagnostic techniques and electrical circuit in azo dye degradation by high voltage electrical discharge

International Nuclear Information System (INIS)

Shen Yongjun; Lei Lecheng; Zhang Xingwang; Zhou Minghua; Zhang Yi

2008-01-01

Fast electrical diagnostics and improvement of electrical circuits for methyl orange (MO) degradation by high voltage pulsed electrical discharge were investigated. To eliminate electromagnetic radiation, several effective methods were employed. RG 218 coaxial cable was substituted for the common transmission lines to transmit high voltage pulses, and multi-lines in parallel were earthed to avoid electromagnetic interference and, additionally, to reduce the stray inductance of the electrical circuit and increase the pulse rise rate to reduce the energy losses in the transmission system. The problem of the differences in the bandwidths of voltage and current probes causing an error in the calculation of energy dissipation was avoided by reducing the bandwidths of voltage and current measurements to the same value. The real discharge current was obtained by subtracting the capacitive current from the total current. The energy per pulse obtained in the reactor before and after improvement of the diagnostics and electrical circuit were 15.5 mJ and 26.8 mJ, respectively, and the energy efficiencies of MO degradation were 1.34 x 10 -9 mol/J and 1.95 x 10 -9 mol/J, respectively

The electrochemistry of IGSCC mitigation in BWR coolant circuits

International Nuclear Information System (INIS)

Macdonald, D.D.

2002-01-01

A brief review is presented of the electrochemical mitigation of IGSCC in water-cooled reactor heat transport circuit structural materials. Electrochemical control and mitigation is possible, because of the existence of a critical potential for IGSCC and by the feasibility of modifying the environment to displace the corrosion potential (ECP) to a value that is more negative than the critical value. However, even in cases where the ECP cannot be displaced sufficiently in the negative direction to become more negative than the critical potential, considerable advantage is accrued, because of the roughly exponential dependence of crack growth rate on potential. The most important parameters in affecting electrochemical control over the ECP and crack growth rate are the kinetic parameters (exchange current densities and Tafel constants) for the redox reactions involving the principal radiolysis products of water (O 2 , H 2 , H 2 O 2 ), external solution composition (concentrations of O 2 , H 2 O 2 , and H 2 ), flow velocity, and the conductivity of the bulk environment. The kinetic parameters for the redox reactions essentially determine the charge transfer impedance of the steel surface, which is shown to be one of the key parameters in affecting the magnitude of the coupling current and hence the crack growth rate. The exchange current densities, in particular, are amenable to control by catalysis or inhibition, with the result that surface modification techniques are highly effective in controlling and mitigating IGSCC in reactor coolant circuit materials. (authors)

High density matter at RHIC

Indian Academy of Sciences (India)

QCD predicts a phase transition between hadronic matter and a quark-gluon plasma at high energy density. The relativistic heavy ion collider (RHIC) at Brookhaven National Laboratory is a new facility dedicated to the experimental study of matter under extreme conditions. Already the first round of experimental results at ...

A precision timing discriminator for high density detector systems

International Nuclear Information System (INIS)

Turko, B.T.; Smith, R.C.

1992-01-01

Most high resolution time measurement techniques require discriminators that accurately make the time arrival of events regardless of their intensity. Constant fraction discriminators or zero-crossing discriminators are generally used. In this paper, the authors describe a zero-crossing discriminator that accurately determines the peak of a quasi-Gaussian waveform by differentiating it and detecting the resulting zero-crossing. Basically, it consists of a fast voltage comparator and tow integrating networks: an RC section and an LR section used in a way that keeps the input impedance purely resistive. A time walk of 100 ps in an amplitude range exceeding 100:1 has been achieved for wave-forms from 1.5 ns to 15 ns FWHM. An arming level discriminator is added to eliminate triggering by noise. Easily implemented in either monolithic or hybrid technology, the circuit is suitable for large multichannel detector systems where size and power dissipation are crucial. Circuit diagrams and typical measured data are also presented

Low-Voltage Switched-Capacitor Circuits

DEFF Research Database (Denmark)

Bidari, E.; Keskin, M.; Maloberti, F.

1999-01-01

Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

Self-amplified CMOS image sensor using a current-mode readout circuit

Science.gov (United States)

Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

2014-05-01

The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

Topology Optimization of Building Blocks for Photonic Integrated Circuits

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard; Sigmund, Ole

2005-01-01

Photonic integrated circuits are likely candidates as high speed replacements for the standard electrical integrated circuits of today. However, in order to obtain a satisfactorily performance many design prob- lems that up until now have resulted in too high losses must be resolved. In this work...... we demonstrate how the method of topology optimization can be used to design a variety of high performance building blocks for the future circuits....

Low-power low-noise analog circuits for on-focal-plane signal processing of infrared sensors

Science.gov (United States)

Pain, Bedabrata; Mendis, Sunetra K.; Schober, Robert C.; Nixon, Robert H.; Fossum, Eric R.

1993-10-01

On-focal-plane signal processing circuits for enhancement of IR imager performance are presented. To enable the detection of high background IR images, an in-pixel current-mode background suppression scheme is presented. The background suppression circuit consists of a current memory placed in the feedback loop of a CTIA and is designed for a thousand-fold suppression of the background flux, thereby easing circuit design constraints, and assuring BLIP operation even with detectors having large response non-uniformities. For improving the performance of low-background IR imagers, an on-chip column-parallel analog-to-digital converter (ADC) is presented. The design of a 10-bit ADC with 50 micrometers pitch and based on sigma-delta ((Sigma) -(Delta) ) modulation is presented. A novel IR imager readout technique featuring photoelectron counting in the unit cell is presented for ultra-low background applications. The output of the unit cell is a digital word corresponding to the incident flux density and the readout is noise free. The design of low-power (noise, high-gain (> 100,000), small real estate (60 micrometers pitch) self-biased CMOS amplifiers required for photon counting are presented.

Statistical delay estimation in digital circuits using VHDL

Directory of Open Access Journals (Sweden)

Milić Miljana Lj.

2014-01-01

Full Text Available The most important feature of modern integrated circuit is the speed. It depends on circuit's delay. For the design of high-speed digital circuits, it is necessary to evaluate delays in the earliest stages of design, thus making it easy to modify and redesign a circuit if it's too slow. This paper gives an approach for efficient delay estimation in the describing phase of the circuit design. The method can statistically estimate the minimum and maximum delay of all possible paths and signal transitions in the circuit, considering the practical implementation of circuits, and information about the parameters' tolerances. The method uses a VHDL description and is verified on ISCAS85 benchmark circuits. Matlab was used for data processing.

Edge operational space for high density/high confinement ELMY H-modes in JET

International Nuclear Information System (INIS)

Sartori, R.; Saibene, G.; Loarte, A.

2002-01-01

This paper discusses how the proximity to the L-H threshold affects the confinement of ELMy H-modes at high density. The largest reduction in confinement at high density is observed at the transition from the Type I to the Type III ELMy regime. At medium plasma triangularity, δ≅0.3 (where δ is the average triangularity at the separatrix), JET experiments show that by increasing the margin above the L-H threshold power and maintaining the edge temperature above the critical temperature for the transition to Type III ELMs, it is possible to avoid the degradation of the pedestal pressure with density, normally observed at lower power. As a result, the range of achievable densities (both in the core and in the pedestal) is increased. At high power above the L-H threshold power the core density was equal to the Greenwald limit with H97≅0.9. There is evidence that a mixed regime of Type I and Type II ELMs has been obtained at this intermediate triangularity, possibly as a result of this increase in density. At higher triangularity, δ≅0.5, the power required to achieve similar results is lower. (author)

Controllable clock circuit design in PEM system

International Nuclear Information System (INIS)

Sun Yunhua; Wang Peihua; Hu Tingting; Feng Baotong; Shuai Lei; Huang Huan; Wei Shujun; Li Ke; Zhao Jingwei; Wei Long

2011-01-01

A high-precision synchronized clock circuit design will be presented, which can supply steady, reliable and anti-jamming clock signal for the data acquirement (DAQ) system of Positron Emission Mammography (PEM). This circuit design is based on the Single-Chip Microcomputer and high-precision clock chip, and can achieve multiple controllable clock signals. The jamming between the clock signals can be reduced greatly with the differential transmission. Meanwhile, the adoption of CAN bus control in the clock circuit can prompt the clock signals to be transmitted or masked simultaneously when needed. (authors)

Controllable clock circuit design in PEM system

International Nuclear Information System (INIS)

Sun Yunhua; Wang Peilin; Hu Tingting; Feng Baotong; Shuai Lei; Huang Huan; Wei Shujun; Li Ke; Zhao Jingwei; Wei Long

2010-01-01

A high-precision synchronized clock circuit design will be presented, which can supply steady, reliable and anti-jamming clock signal for the data acquirement (DAQ) system of Positron Emission Mammography (PEM). This circuit design is based on the Single-Chip Microcomputer and high-precision clock chip, and can achieve multiple controllable clock signals. The jamming between the clock signals can be reduced greatly with the differential transmission. Meanwhile, the adoption of CAN bus control in the clock circuit can prompt the clock signals to be transmitted or masked simultaneously when needed. (authors)

High theory/mass markets: Newsweek magazine and the circuits of medical culture.

Science.gov (United States)

Lewis, Bradley

2007-01-01

Medicine is driven by much more than science and reason (ethics); it is also driven by the circuits of culture within which it operates. This article examines how postmodern theory deconstructs standard ideals of science and reason and allows medical humanities scholars to better contextualize the world of medicine. As such, postmodern theory provides an invaluable tool for understanding the circuits of popular culture and medicine's place within these circuits. Using a recent issue of Newsweek magazine devoted to health and technology to illustrate the main points, this essay argues that contemporary popular influences on medicine are deeply problematic, and that through an appreciation of the dynamics of culture, medical humanities scholars can join the struggle over medical culture. This perspective allows medical humanities to make important contributions toward alternative circuits of medical representation, consumption, and identification.

Ultra-low power integrated circuit design circuits, systems, and applications

CERN Document Server

Li, Dongmei; Wang, Zhihua

2014-01-01

This book describes the design of CMOS circuits for ultra-low power consumption including analog, radio frequency (RF), and digital signal processing circuits (DSP). The book addresses issues from circuit and system design to production design, and applies the ultra-low power circuits described to systems for digital hearing aids and capsule endoscope devices. Provides a valuable introduction to ultra-low power circuit design, aimed at practicing design engineers; Describes all key building blocks of ultra-low power circuits, from a systems perspective; Applies circuits and systems described to real product examples such as hearing aids and capsule endoscopes.

Design and test results of a low-noise readout integrated circuit for high-energy particle detectors

International Nuclear Information System (INIS)

Zhang Mingming; Chen Zhongjian; Zhang Yacong; Lu Wengao; Ji Lijiu

2010-01-01

A low-noise readout integrated circuit for high-energy particle detector is presented. The noise of charge sensitive amplifier was suppressed by using single-side amplifier and resistors as source degeneration. Continuous-time semi-Gaussian filter is chosen to avoid switch noise. The peaking time of pulse shaper and the gain can be programmed to satisfy multi-application. The readout integrated circuit has been designed and fabricated using a 0.35 μm double-poly triple-metal CMOS technology. Test results show the functions of the readout integrated circuit are correct. The equivalent noise charge with no detector connected is 500-700 e in the typical mode, the gain is tunable within 13-130 mV/fC and the peaking time varies from 0.7 to 1.6 μs, in which the average gain is about 20.5 mV/fC, and the linearity reaches 99.2%. (authors)

Growth limitation of Lemna minor due to high plant density

NARCIS (Netherlands)

Driever, S.M.; Nes, van E.H.; Roijackers, R.M.M.

2005-01-01

The effect of high population densities on the growth rate of Lemna minor (L.) was studied under laboratory conditions at 23°C in a medium with sufficient nutrients. At high population densities, we found a non-linear decreasing growth rate with increasing L. minor density. Above a L. minor biomass

Density-dependent phonoriton states in highly excited semiconductors

International Nuclear Information System (INIS)

Nguyen Hong Quang; Nguyen Minh Khue; Nguyen Que Huong

1995-09-01

The dynamical aspects of the phonoriton state in highly-photoexcited semiconductors is studied theoretically. The effect of the exciton-exciton interaction and nonbosonic character of high-density excitons are taken into account. Using Green's function method and within the Random Phase Approximation it is shown that the phonoriton dispersion and damping are very sensitive to the exciton density, characterizing the excitation degree of semiconductors. (author). 18 refs, 3 figs

Electronic circuit encyclopedia 2

Energy Technology Data Exchange (ETDEWEB)

Park, Sun Ho

1992-10-15

This book is composed of 15 chapters, which are amplification of weak signal and measurement circuit audio control and power amplification circuit, data transmission and wireless system, forwarding and isolation, signal converting circuit, counter and comparator, discriminator circuit, oscillation circuit and synthesizer, digital and circuit on computer image processing circuit, sensor drive circuit temperature sensor circuit, magnetic control and application circuit, motor driver circuit, measuring instrument and check tool and power control and stability circuit.

Electronic circuit encyclopedia 2

International Nuclear Information System (INIS)

Park, Sun Ho

1992-10-01

This book is composed of 15 chapters, which are amplification of weak signal and measurement circuit audio control and power amplification circuit, data transmission and wireless system, forwarding and isolation, signal converting circuit, counter and comparator, discriminator circuit, oscillation circuit and synthesizer, digital and circuit on computer image processing circuit, sensor drive circuit temperature sensor circuit, magnetic control and application circuit, motor driver circuit, measuring instrument and check tool and power control and stability circuit.

Digital signal processing in power electronics control circuits

CERN Document Server

Sozanski, Krzysztof

2013-01-01

Many digital control circuits in current literature are described using analog transmittance. This may not always be acceptable, especially if the sampling frequency and power transistor switching frequencies are close to the band of interest. Therefore, a digital circuit is considered as a digital controller rather than an analog circuit. This helps to avoid errors and instability in high frequency components. Digital Signal Processing in Power Electronics Control Circuits covers problems concerning the design and realization of digital control algorithms for power electronics circuits using

Double trouble at high density:

DEFF Research Database (Denmark)

Gergs, André; Palmqvist, Annemette; Preuss, Thomas G

2014-01-01

Population size is often regulated by negative feedback between population density and individual fitness. At high population densities, animals run into double trouble: they might concurrently suffer from overexploitation of resources and also from negative interference among individuals...... regardless of resource availability, referred to as crowding. Animals are able to adapt to resource shortages by exhibiting a repertoire of life history and physiological plasticities. In addition to resource-related plasticity, crowding might lead to reduced fitness, with consequences for individual life...... history. We explored how different mechanisms behind resource-related plasticity and crowding-related fitness act independently or together, using the water flea Daphnia magna as a case study. For testing hypotheses related to mechanisms of plasticity and crowding stress across different biological levels...

An integrated circuit switch

Science.gov (United States)

Bonin, E. L.

1969-01-01

Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

High temperature filtration of radioactivable corrosion products in the primary circuit of PWR type reactors

International Nuclear Information System (INIS)

Dolle, L.

1976-01-01

A effective limitation to the deposition of radioactive corrosion products in the core of a reactor at power operation, is to be obtained by filtering the water of the primary circuit at a flow rate upper than 1% of the coolant flow rate. However, in view of accounting for more important release of corrosion products during the reactor start-up and also for some possible variations in the efficiency of the system, it is better that the flow rate to be treated by the cleaning circuit is stated at 5%. Filtration must be effected at the temperature of the primary circuit and preferably on each loop. To this end, the feasibility of electromagnetic filtration or filtration through a deep bed of granulated graphite has been studied. The on-loop tests effected on each filter gave efficiencies and yields respectively upper than 90% and 99% for magnetite and ferrite particles in suspension in water at 250 deg C. Such results confirm the interest lying in high temperature filtration and lead to envisage its application to reactors [fr

A Low-Power CMOS Piezoelectric Transducer Based Energy Harvesting Circuit for Wearable Sensors for Medical Applications

Directory of Open Access Journals (Sweden)

Taeho Oh

2017-12-01

Full Text Available Piezoelectric vibration based energy harvesting systems have been widely utilized and researched as powering modules for various types of sensor systems due to their ease of integration and relatively high energy density compared to RF, thermal, and electrostatic based energy harvesting systems. In this paper, a low-power CMOS full-bridge rectifier is presented as a potential solution for an efficient energy harvesting system for piezoelectric transducers. The energy harvesting circuit consists of two n-channel MOSFETs (NMOS and two p-channel MOSFETs (PMOS devices implementing a full-bridge rectifier coupled with a switch control circuit based on a PMOS device driven by a comparator. With a load of 45 kΩ, the output rectifier voltage and the input piezoelectric transducer voltage are 694 mV and 703 mV, respectably, while the VOUT versus VIN conversion ratio is 98.7% with a PCE of 52.2%. The energy harvesting circuit has been designed using 130 nm standard CMOS process.

Research of Driving Circuit in Coaxial Induction Coilgun

Directory of Open Access Journals (Sweden)

Yadong Zhang

2013-09-01

Full Text Available Power supply is crucial equipment in coaxial induction coil launcher.Configuration of the driving circuit influences the efficiency of the coil launcher directly.This paper gives a detailed analysis of the properties of the driving circuit construction based on the capacitor source. Three topologies of the driving circuit are compared including oscillation circuit, crowbar circuit and half-wave circuit. It is proved that which circuit has the better efficiency depends on the detailed parameters of the experiment, especially the crowbar resistance. Crowbar resistor regulates not only efficiency of the system, but also temperature rise of the coil. Electromagnetic force (EMF applied on the armature will be another question which influences service condition of the driving circuits. Oscillation circuit and crowbar circuit should apply to the asynchronous induction coil launcher and synchronous induction coil launcher, respectively. Half-wave circuit is seldom used in the experiment. Although efficiency of the half-wave circuit is very high, the speed of the armature is low. A simple independent half-wave circuit is suggested in this paper. Generally speaking, the comprehensive property of crowbar circuit is the most practical in the three typical circuits. Conclusions of the paper could provide guidelines for practice.

Wireless and photonic high-speed communication technologies, circuits and design tools

DEFF Research Database (Denmark)

Krozer, Viktor; Johansen, Tom Keinicke; Jiang, Chenhui

2009-01-01

were reported. These communication systems present new challenges for circuit designers. The presentation will be devoted to technologies and various aspects of circuit design for 100 G applications. We will present overview on wired and wireless systems demonstrating the challenges of this research...... including design challenges, relevant trade-offs and the present bottlenecks. Different system architectures will be presented with their impact on component requirements. Similarities and differences of wired and wireless applications will be pointed out. Design methodologies, necessary tools and circuit...... are fundamental to emerging consumer and professional applications. These systems start to emerge as near future applications and are subject of ongoing research activities in Europe, for example within the EU FP6 GIBON project. Wireless systems with over 100 GHz carriers as well as first over 100-G fibre systems...

Highly efficient integrated rectifier and voltage boosting circuits for energy harvesting applications

Directory of Open Access Journals (Sweden)

D. Maurath

2008-05-01

Full Text Available This paper presents novel circuit concepts for integrated rectifiers and voltage converting interfaces for energy harvesting micro-generators. In the context of energy harvesting, usually only small voltages are supplied by vibration-driven generators. Therefore, rectification with minimum voltage losses and low reverse currents is an important issue. This is realized by novel integrated rectifiers which were fabricated and are presented in this article. Additionally, there is a crucial need for dynamic load adaptation as well as voltage up-conversion. A circuit concept is presented, which is able to obtain both requirements. This generator interface adapts its input impedance for an optimal energy transfer efficiency. Furthermore, this generator interface provides implicit voltage up-conversion, whereas the generator output energy is stored on a buffer, which is connected to the output of the voltage converting interface. As simulations express, this fully integrated converter is able to boost ac-voltages greater than |0.35 V| to an output dc-voltage of 2.0 V–2.5 V. Thereby, high harvesting efficiencies above 80% are possible within the entire operational range.

X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit

Directory of Open Access Journals (Sweden)

Kyung-Tae Bae

2017-11-01

Full Text Available This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE using a 0.25 μm GaN HEMT process of WIN semiconductors, Inc. The optimum load impedances at the fundamental and third harmonic frequencies are extracted from load-pull simulations at the transistor’s extrinsic plane, including the drain-source capacitance and the series drain inductance. The third harmonic-tuned circuit is effectively integrated with the output matching circuit at the fundamental frequency, without complicating the whole output matching circuit. The input matching circuit uses a lossy matching scheme, which allows a good return loss and a simple LC low-pass circuit configuration. The fabricated power amplifier monolithic microwave integrated circuit (MMIC occupies an area of 13.26 mm2, and shows a linear gain of 20 dB or more, a saturated output power of 43.2~44.7 dBm, and a PAE of 35~37% at 8.5 to 10.5 GHz.

Fifth International Conference on High Energy Density Physics

Energy Technology Data Exchange (ETDEWEB)

Beg, Farhat

2017-07-05

The Fifth International Conference on High Energy Density Physics (ICHED 2015) was held in the Catamaran Hotel in San Diego from August 23-27, 2015. This meeting was the fifth in a series which began in 2008 in conjunction with the April meeting of the American Physical Society (APS). The main goal of this conference has been to bring together researchers from all fields of High Energy Density Science (HEDS) into one, unified meeting.

Collective of mechatronics circuit

International Nuclear Information System (INIS)

1987-02-01

This book is composed of three parts, which deals with mechatronics system about sensor, circuit and motor. The contents of the first part are photo sensor of collector for output, locating detection circuit with photo interrupts, photo sensor circuit with CdS cell and lamp, interface circuit with logic and LED and temperature sensor circuit. The second part deals with oscillation circuit with crystal, C-R oscillation circuit, F-V converter, timer circuit, stability power circuit, DC amp and DC-DC converter. The last part is comprised of bridge server circuit, deformation bridge server, controlling circuit of DC motor, controlling circuit with IC for PLL and driver circuit of stepping motor and driver circuit of Brushless.

Collective of mechatronics circuit

Energy Technology Data Exchange (ETDEWEB)

NONE

1987-02-15

This book is composed of three parts, which deals with mechatronics system about sensor, circuit and motor. The contents of the first part are photo sensor of collector for output, locating detection circuit with photo interrupts, photo sensor circuit with CdS cell and lamp, interface circuit with logic and LED and temperature sensor circuit. The second part deals with oscillation circuit with crystal, C-R oscillation circuit, F-V converter, timer circuit, stability power circuit, DC amp and DC-DC converter. The last part is comprised of bridge server circuit, deformation bridge server, controlling circuit of DC motor, controlling circuit with IC for PLL and driver circuit of stepping motor and driver circuit of Brushless.

High performance H-mode plasmas at densities above the Greenwald limit

International Nuclear Information System (INIS)

Mahdavi, M.A.; Osborne, T.H.; Leonard, A.W.

2001-01-01

Densities up to 40 percent above the Greenwald limit are reproducibly achieved in high confinement (H ITER89p =2) ELMing H-mode discharges. Simultaneous gas fueling and divertor pumping were used to obtain these results. Confinement of these discharges, similar to moderate density H-mode, is characterized by a stiff temperature profile, and therefore sensitive to the density profile. A particle transport model is presented that explains the roles of divertor pumping and geometry for access to high densities. Energy loss per ELM at high density is a factor of five lower than predictions of an earlier scaling, based on data from lower density discharges. (author)

Novel nanostructured materials for high energy density supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Yuan, C.Z.; Zhang, X.G. [Nanjing Univ. of Aeronautics and Astronautics (China). College of Material Science and Engineering

2010-07-01

Researchers are currently examining methods of improving energy density while not sacrificing the high power density of supercapacitors. In this study, nanostructured materials assembled from nanometer-sized building blocks with mesoporosity were synthesized in order investigate diffusion time, kinetics, and capacitances. Petal-like cobalt hydroxide Co(OH){sub 2} mesocrystals, urchin-like Co(OH){sub 2} and dicobalt tetroxide (Co{sub 2}O{sub 4}) ordered arrays as well as N{sub i}O microspheres were assembled from 0-D nanoparticles, 1-D mesoporous nanowires and nanobelts, and 2-D mesoporous nanopetals. The study showed that all the synthesized nanostructured materials delivered larger energy densities while showing electrochemical stability at high rates.

Experimental Device for Learning of Logical Circuit Design using Integrated Circuits

OpenAIRE

石橋, 孝昭

2012-01-01

This paper presents an experimental device for learning of logical circuit design using integrated circuits and breadboards. The experimental device can be made at a low cost and can be used for many subjects such as logical circuits, computer engineering, basic electricity, electrical circuits and electronic circuits. The proposed device is effective to learn the logical circuits than the usual lecture.

ON THE ORIGIN OF THE HIGH COLUMN DENSITY TURNOVER IN THE H I COLUMN DENSITY DISTRIBUTION

International Nuclear Information System (INIS)

Erkal, Denis; Gnedin, Nickolay Y.; Kravtsov, Andrey V.

2012-01-01

We study the high column density regime of the H I column density distribution function and argue that there are two distinct features: a turnover at N H I ≈ 10 21 cm –2 , which is present at both z = 0 and z ≈ 3, and a lack of systems above N H I ≈ 10 22 cm –2 at z = 0. Using observations of the column density distribution, we argue that the H I-H 2 transition does not cause the turnover at N H I ≈ 10 21 cm –2 but can plausibly explain the turnover at N H I ∼> 10 22 cm –2 . We compute the H I column density distribution of individual galaxies in the THINGS sample and show that the turnover column density depends only weakly on metallicity. Furthermore, we show that the column density distribution of galaxies, corrected for inclination, is insensitive to the resolution of the H I map or to averaging in radial shells. Our results indicate that the similarity of H I column density distributions at z = 3 and 0 is due to the similarity of the maximum H I surface densities of high-z and low-z disks, set presumably by universal processes that shape properties of the gaseous disks of galaxies. Using fully cosmological simulations, we explore other candidate physical mechanisms that could produce a turnover in the column density distribution. We show that while turbulence within giant molecular clouds cannot affect the damped Lyα column density distribution, stellar feedback can affect it significantly if the feedback is sufficiently effective in removing gas from the central 2-3 kpc of high-redshift galaxies. Finally, we argue that it is meaningful to compare column densities averaged over ∼ kpc scales with those estimated from quasar spectra that probe sub-pc scales due to the steep power spectrum of H I column density fluctuations observed in nearby galaxies.

Highly Selective and Sensitive Self-Powered Glucose Sensor Based on Capacitor Circuit.

Science.gov (United States)

Slaughter, Gymama; Kulkarni, Tanmay

2017-05-03

Enzymatic glucose biosensors are being developed to incorporate nanoscale materials with the biological recognition elements to assist in the rapid and sensitive detection of glucose. Here we present a highly sensitive and selective glucose sensor based on capacitor circuit that is capable of selectively sensing glucose while simultaneously powering a small microelectronic device. Multi-walled carbon nanotubes (MWCNTs) is chemically modified with pyrroloquinoline quinone glucose dehydrogenase (PQQ-GDH) and bilirubin oxidase (BOD) at anode and cathode, respectively, in the biofuel cell arrangement. The input voltage (as low as 0.25 V) from the biofuel cell is converted to a stepped-up power and charged to the capacitor to the voltage of 1.8 V. The frequency of the charge/discharge cycle of the capacitor corresponded to the oxidation of glucose. The biofuel cell structure-based glucose sensor synergizes the advantages of both the glucose biosensor and biofuel cell. In addition, this glucose sensor favored a very high selectivity towards glucose in the presence of competing and non-competing analytes. It exhibited unprecedented sensitivity of 37.66 Hz/mM.cm 2 and a linear range of 1 to 20 mM. This innovative self-powered glucose sensor opens new doors for implementation of biofuel cells and capacitor circuits for medical diagnosis and powering therapeutic devices.

Micro-coolers fabricated as a component in an integrated circuit

International Nuclear Information System (INIS)

Glover, James; Oxley, Chris H; Khalid, Ata; Cumming, David; Stephen, Alex; Dunn, Geoff

2015-01-01

The packing density and power capacity of integrated electronics is increasing resulting in higher thermal flux densities. Improved thermal management techniques are required and one approach is to include thermoelectric coolers as part of the integrated circuit. An analysis will be described showing that the supporting substrate will have a large influence on the cooling capacity of the thermoelectric cooler. In particular, for materials with a low ZT figure of merit (for example gallium arsenide (GaAs) based compounds) the substrate will have to be substantially thinned to obtain cooling, which may preclude the use of thermoelectric coolers, for example, as part of a GaAs based integrated circuit. Further, using experimental techniques to measure only the small positive cooling temperature difference (ΔT) between the anode (T h ) and the cathode (T c ) contacts can be misinterpreted as cooling when in fact it is heating. (paper)

Thyristor based short circuit current injection in isolated grids

OpenAIRE

Hoff, Bjarte; Sharma, Pawan; Østrem, Trond

2017-01-01

This paper proposes a thyristor based short circuit current injector for providing short circuit current in isolated and weak grids, where sufficient fault current to trigger circuit breakers may not be available. This will allow the use of conventional miniature circuit breakers, which requires high fault current for instantaneous tripping. The method has been validated through experiments.

Functional High-Intensity Circuit Training Improves Body Composition, Peak Oxygen Uptake, Strength, and Alters Certain Dimensions of Quality of Life in Overweight Women.

Science.gov (United States)

Sperlich, Billy; Wallmann-Sperlich, Birgit; Zinner, Christoph; Von Stauffenberg, Valerie; Losert, Helena; Holmberg, Hans-Christer

2017-01-01

The effects of circuit-like functional high-intensity training (Circuit HIIT ) alone or in combination with high-volume low-intensity exercise (Circuit combined ) on selected cardio-respiratory and metabolic parameters, body composition, functional strength and the quality of life of overweight women were compared. In this single-center, two-armed randomized, controlled study, overweight women performed 9-weeks (3 sessions·wk -1 ) of either Circuit HIIT ( n = 11), or Circuit combined ( n = 8). Peak oxygen uptake and perception of physical pain were increased to a greater extent ( p body mass, body-mass-index, waist-to-hip ratio, fat mass, and enhanced fat-free mass; decreased ratings of perceived exertion during submaximal treadmill running; improved the numbers of push-ups, burpees, one-legged squats, and 30-s skipping performed, as well as the height of counter-movement jumps; and improved physical and social functioning, role of physical limitations, vitality, role of emotional limitations, and mental health to a similar extent (all p training can be employed to improve body composition, selected variables of functional strength, and certain dimensions of quality of life in overweight women. However, Circuit HIIT improves peak oxygen uptake to a greater extent, but with more perception of pain, whereas Circuit combined results in better perception of general health.

Effect of mix proportion of high density concrete on compressive strength, density and radiation absorption

International Nuclear Information System (INIS)

Noor Azreen Masenwat; Mohamad Pauzi Ismail; Suhairy Sani; Ismail Mustapha; Nasharuddin Isa; Mohamad Haniza Mahmud; Mohammad Shahrizan Samsu

2014-01-01

To prevent radiation leaks at nuclear reactors, high-density concrete is used as an absorbent material for radiation from spreading into the environment. High-density concrete is a mixture of cement, sand, aggregate (usually high-density minerals) and water. In this research, hematite stone is used because of its mineral density higher than the granite used in conventional concrete mixing. Mix concrete in this study were divided into part 1 and part 2. In part 1, the concrete mixture is designed with the same ratio of 1: 2: 4 but differentiated in terms of water-cement ratio (0.60, 0.65, 0.70, 0.75, 0.80 ). Whereas, in part 2, the concrete mixture is designed to vary the ratio of 1: 1: 2, 1: 1.5: 3, 1: 2: 3, 1: 3: 6, 1: 2: 6 with water-cement ratio (0.7, 0.8, 0.85, 0.9). In each section, the division has also performed in a mixture of sand and fine sand hematite. Then, the physical characteristics of the density and the compressive strength of the mixture of part 1 and part 2 is measured. Comparisons were also made in terms of absorption of radiation by Cs-137 and Co-60 source for each mix. This paper describes and discusses the relationship between the concrete mixture ratio, the relationship with the water-cement ratio, compressive strength, density, different mixture of sand and fine sand hematite. (author)

A statistical-based material and process guidelines for design of carbon nanotube field-effect transistors in gigascale integrated circuits.