Occipital Proton Magnetic Resonance Spectroscopy ((1)H-MRS) Reveals Normal Metabolite Concentrations in Retinal Visual Field Defects

NARCIS (Netherlands)

Boucard, Christine C.; Hoogduin, Johannes M.; van der Grond, Jeroen; Cornelissen, Frans W.

2007-01-01

Background. Progressive visual field defects, such as age-related macular degeneration and glaucoma, prevent normal stimulation of visual cortex. We investigated whether in the case of visual field defects, concentrations of metabolites such as N-acetylaspartate (NAA), a marker for degenerative

Influence of chemical disorder on energy dissipation and defect evolution in concentrated solid solution alloys

International Nuclear Information System (INIS)

Zhang, Yanwen; Wang, Lumin; Caro, Alfredo; Weber, William J.; Univ. of Tennessee, Knoxville, TN

2015-01-01

A long-standing objective in materials research is to understand how energy is dissipated in both the electronic and atomic subsystems in irradiated materials, and how related non-equilibrium processes may affect defect dynamics and microstructure evolution. Here we show that alloy complexity in concentrated solid solution alloys having both an increasing number of principal elements and altered concentrations of specific elements can lead to substantial reduction in the electron mean free path and thermal conductivity, which has a significant impact on energy dissipation and consequentially on defect evolution during ion irradiation. Enhanced radiation resistance with increasing complexity from pure nickel to binary and to more complex quaternary solid solutions is observed under ion irradiation up to an average damage level of 1 displacement per atom. Understanding how materials properties can be tailored by alloy complexity and their influence on defect dynamics may pave the way for new principles for the design of radiation tolerant structural alloys

Influence of oxygen partial pressure on defect concentrations and on oxygen diffusion in UO2+x

International Nuclear Information System (INIS)

Pizzi, Elisabetta

2013-01-01

The hyper-stoichiometric uranium dioxide (UO 2+x ) is stable over a wide range of temperature and compositions. Such variations of composition and the eventual presence of doping elements or impurities lead to a variation of anionic and electronic defect concentrations. Moreover, many properties of this material are affected by its composition modifications, in particular their atomic transport properties. Firstly we developed a point defect model to evaluate the dependence of the electronic and oxygen defect concentrations upon temperature, equilibrium oxygen partial pressure and impurity content. The physical constants of the model, in particular the equilibrium constants of the defect formation reactions were determined from deviation from stoichiometry and electrical conductivity measurements of literature. This work enabled us to interpret our measures of conductivity, oxygen chemical and self- diffusion coefficients. From a quantitative standpoint, the analysis of our experimental results allows to evaluate the oxygen interstitial diffusion coefficient but also its formation energy. Moreover, an estimate of oxygen di-interstitial formation energy is also provided. Presence of oxygen clusters leads oxygen self- and chemical diffusion to decrease. X-ray Absorption Spectroscopy characterization shows the presence of the same defect in the entire deviation from stoichiometry studied, confirming the approach used to develop the model. (author) [fr

Defect assessment procedures at high temperature

International Nuclear Information System (INIS)

Ainsworth, R.A.

1991-01-01

A comprehensive assessment procedure for the high-temperature response of structures is being produced. The procedure is referred to as R5 and is written as a series of step-by-step instructions in a number of volumes. This paper considers in detail those parts of R5 which address the behaviour of defects. The defect assessment procedures may be applied to defects found in service, postulated defects, or defects formed during operation as a result of creep-fatigue loading. In the last case, a method is described for deducing from endurance data the number of cycles to initiate a crack of a specified size. Under steady loading, the creep crack tip parameter C * is used to assess crack growth. Under cyclic loading, the creep crack growth during dwell periods is stiell governed by C * but crack growth due to cyclic excursions must also be included. This cyclic crack growth is described by an effective stress intensity factor range. A feature of the R5 defect assessment procedures in that they are based on simplified methods and approximate reference stress methods are described which enable C * in a component to be evaluated. It is shown by comparison with theoretical calculations and experimental data that reliable estimates of C * and the associated crack growth are obtained provided realistic creep strain rate date are used in the reference stress approximation. (orig./HP)

Hydrogen concentration and distribution in high-purity germanium crystals

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.; Luke, P.N.

1981-10-01

High-purity germanium crystals used for making nuclear radiation detectors are usually grown in a hydrogen ambient from a melt contained in a high-purity silica crucible. The benefits and problems encountered in using a hydrogen ambient are reviewed. A hydrogen concentration of about 2 x 10 15 cm -3 has been determined by growing crystals in hydrogen spiked with tritium and counting the tritium β-decays in detectors made from these crystals. Annealing studies show that the hydrogen is strongly bound, either to defects or as H 2 with a dissociation energy > 3 eV. This is lowered to 1.8 eV when copper is present. Etching defects in dislocation-free crystals grown in hydrogen have been found by etch stripping to have a density of about 1 x 10 7 cm -3 and are estimated to contain 10 8 H atoms each

Carrier removal and defect behavior in p-type InP

Science.gov (United States)

Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

1992-01-01

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

CERN Document Server

Seebauer, Edmund G

2009-01-01

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

First-principles study on oxidation effects in uranium oxides and high-pressure high-temperature behavior of point defects in uranium dioxide

Science.gov (United States)

Geng, Hua Y.; Song, Hong X.; Jin, K.; Xiang, S. K.; Wu, Q.

2011-11-01

Formation Gibbs free energy of point defects and oxygen clusters in uranium dioxide at high-pressure high-temperature conditions are calculated from first principles, using the LSDA+U approach for the electronic structure and the Debye model for the lattice vibrations. The phonon contribution on Frenkel pairs is found to be notable, whereas it is negligible for the Schottky defect. Hydrostatic compression changes the formation energies drastically, making defect concentrations depend more sensitively on pressure. Calculations show that, if no oxygen clusters are considered, uranium vacancy becomes predominant in overstoichiometric UO2 with the aid of the contribution from lattice vibrations, while compression favors oxygen defects and suppresses uranium vacancy greatly. At ambient pressure, however, the experimental observation of predominant oxygen defects in this regime can be reproduced only in a form of cuboctahedral clusters, underlining the importance of defect clustering in UO2+x. Making use of the point defect model, an equation of state for nonstoichiometric oxides is established, which is then applied to describe the shock Hugoniot of UO2+x. Furthermore, the oxidization and compression behavior of uranium monoxide, triuranium octoxide, uranium trioxide, and a series of defective UO2 at 0 K are investigated. The evolution of mechanical properties and electronic structures with an increase of the oxidation degree are analyzed, revealing the transition of the ground state of uranium oxides from metallic to Mott insulator and then to charge-transfer insulator due to the interplay of strongly correlated effects of 5f orbitals and the shift of electrons from uranium to oxygen atoms.

EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

Science.gov (United States)

Chan, Y. David; Rastegar, Abbas; Yun, Henry; Putna, E. Steve; Wurm, Stefan

2010-04-01

Reducing mask blank and patterned mask defects is the number one challenge for extreme ultraviolet lithography. If the industry succeeds in reducing mask blank defects at the required rate of 10X every year for the next 2-3 years to meet high volume manufacturing defect requirements, new inspection and review tool capabilities will soon be needed to support this goal. This paper outlines the defect inspection and review tool technical requirements and suggests development plans to achieve pilot line readiness in 2011/12 and high volume manufacturing readiness in 2013. The technical specifications, tooling scenarios, and development plans were produced by a SEMATECH-led technical working group with broad industry participation from material suppliers, tool suppliers, mask houses, integrated device manufacturers, and consortia. The paper summarizes this technical working group's assessment of existing blank and mask inspection/review infrastructure capabilities to support pilot line introduction and outlines infrastructure development requirements and tooling strategies to support high volume manufacturing.

Extremely high hole concentrations in c-plane GaN

Energy Technology Data Exchange (ETDEWEB)

Trybus, Elaissa; Moseley, Michael; Henderson, Walter; Billingsley, Daniel [Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Namkoong, Gon [Old Dominion University, Applied Research Center, Newport News, VA (United States); Look, David C. [Wright State University, Semiconductor Research Center, Dayton, OH (United States); Doolittle, W.A.

2009-06-15

Metal Modulated Epitaxy (S. D. Burnham et al., J. Appl. Phys. 104, 024902 (2008)[1]) is extended to include modulation of both the shutters of Ga and Mg, the Mg being delivered from a Veeco corrosive series valved cracker (S. D. Burnham et al., Mater. Res. Soc. Proc. 798, Y8.11 (2003)[2]). The Ga fluxes used are sufficiently large that droplets rapidly form when the Ga shutter opens and are subsequently depleted when the Ga shutter closes. The result is the ability to limit surface faceting while predominantly growing under average N-rich growth conditions and thus, possibly reduce N-vacancy defects. N-vacancy defects are known to result in compensation. This ability to grow higher quality materials under N-rich conditions results in very high hole concentrations and low resistivity p-type materials. Hole concentrations as high as 2 x 10{sup 19} cm{sup -3} have been achieved on c-plane GaN resulting in resistivities as low as 0.38 ohm-cm. The dependence on Ga flux, shutter timing, the corresponding RHEED images for each condition is detailed and clearly show minimization of faceting and crystal quality variations as determined by X-ray diffraction. Quantification of the Mg incorporation and residual impurities such as hydrogen, oxygen, and carbon by SIMS, eliminates co-doping, while temperature dependent hall measurements show reduced activation energies. X-ray diffraction data compares crystalline quality with hole concentration. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

International Nuclear Information System (INIS)

Vanhellemont, J.; Romano-Rodriguez, A.

1994-01-01

A semi-quantitative model describing the influence of interfaces and stress fields on {113}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role of extrinsic point defects. It is shown that the observed distribution of {113}-defects in high-flux electron-irradiated silicon and its dependence on irradiation temperature and dopant concentration can be understood by taking into account not only the influence of the surfaces and interfaces as sinks for intrinsic point defects but also the thermal stability of the bulk sinks for intrinsic point defects. In heavily doped silicon the bulk sinks are related with pairing reactions of the dopant atoms with the generated intrinsic point defects or related with enhanced recombination of vacancies and self-interstitials at extrinsic point defects. The obtained theoretical results are correlated with published experimental data on boron-and phosphorus-doped silicon and are illustrated with observations obtained by irradiating cross-section transmission electron microscopy samples of wafer with highly doped surface layers. (orig.)

Behavior of high Tc-superconductors and irradiated defects under reactor irradiation

International Nuclear Information System (INIS)

Atobe, Kozo; Honda, Makoto; Fukuoka, Noboru; Yoshida, Hiroyuki.

1991-01-01

It has been well known that the lattice defects of various types are introduced in ceramics without exception, and exert large effect to the function of these materials. Among oxides, the electronic materials positively using oxygen defect control have been already put in practical use. Also in the oxide high temperature superconductors which are Perovskite type composite oxides, the superconductive characteristics are affected largely by the concentration of the oxygen composing them. This is regarded as an important factor for causing superconductivity, related with the oxygen cavities arising at this time and the carriers bearing superconductivity. In this study, the irradiation effect with relatively low dose, the measurement under irradiation, the effect of irradiation temperature, and the effect of radiation quality were evaluated by the irradiation of YBCO, EBCO and LBCO. The experimental method, and the irradiation effect at low temperature and normal temperature, the effect of Co-60 gamma ray irradiation instead of reactor irradiation are reported. (K.I.)

Formation of defects at high temperature plastic deformation of gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Mikhnovich, V.V.

2006-03-14

The purpose of the present thesis consists in acquiring more concrete information concerning the mechanism of the movement of dislocations and types of defects that appear during the process of dislocation motion on the basis of systematic experimental studies of the GaAs deformation. Experimental studies concerning the dependence of the stress of the samples from their deformation at different values of the deformation parameters (like temperature and deformation speed) were conducted in this paper. To determine the concentration of defects introduced in samples during the deformation process the positron annihilation spectroscopy (PAS) method was used. The second chapter of this paper deals with models of movement of dislocations and origination of defects during deformation of the samples. In the third chapter channels and models of positron annihilation in the GaAs samples are investigated. In the forth chapter the used experimental methods, preparation procedure of test samples and technical data of conducted experiments are described. The fifth chapter shows the results of deformation experiments. The sixth chapter shows the results of positron lifetime measurements by the PAS method. In the seventh chapter one can find analyses of the values of defects concentration that were introduced in samples during deformation. (orig.)

Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

Energy Technology Data Exchange (ETDEWEB)

Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Chey, Chan Oeurn; Pozina, Galia; Willander, Magnus; Nur, Omer [Department of Science and Technology (ITN), Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Liu, Xianjie; Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-583 81 Linköping (Sweden)

2015-08-15

Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL) spectra were collected for all samples. Cathodoluminescence (CL) spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE) to the deep-level emission (DLE) peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h), which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h) will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

Directory of Open Access Journals (Sweden)

Hatim Alnoor

2015-08-01

Full Text Available Hexagonal c-axis oriented zinc oxide (ZnO nanorods (NRs with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL spectra were collected for all samples. Cathodoluminescence (CL spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE to the deep-level emission (DLE peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h, which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

Modeling defect production in high energy collision cascades

International Nuclear Information System (INIS)

Heinisch, H.L.; Singh, B.N.

1993-01-01

A multi-model approach roach (MMA) to simulating defect production processes at the atomic scale is described that incorporates molecular dynamics (MD), binary collision approximation (BCA) calculations and stochastic annealing simulations. The central hypothesis of the MMA is that the simple, fast computer codes capable of simulating large numbers of high energy cascades (e.g., BCA codes) can be made to yield the correct defect configurations when their parameters are calibrated using the results of the more physically realistic MD simulations. The calibration procedure is investigated using results of MD simulations of 25 keV cascades in copper. The configurations of point defects are extracted from the MD cascade simulations at the end of the collisional phase, similar to the information obtained with a binary collision model. The MD collisional phase defect configurations are used as input to the ALSOME annealing simulation code, and values of the ALSOME quenching parameters are determined that yield the best fit to the post-quenching defect configurations of the MD simulations

Selected topics in high temperature chemistry defect chemistry of solids

CERN Document Server

Johannesen, Ø

2013-01-01

The properties of materials at high temperature play a vital role in their processing and practical use. The real properties of materials at elevated temperatures are very often governed by defects in their structure. Lattice defects may consist of point defects like vacancies, interstitial atoms or substituted atoms. These classes are discussed in general and specifically for oxides, nitrides, carbides and sulfides. Defect aggregates, shear structures and adaptive structures are also described. Special attention is paid to hydrogen defects which seem to play an important role in several mater

Defect characterization in high-purity silicon after γ- and hadron irradiation

International Nuclear Information System (INIS)

Stahl, J.

2004-07-01

The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

Radiation-induced segregation on defect clusters in single-phase concentrated solid-solution alloys

International Nuclear Information System (INIS)

Lu, Chenyang; Yang, Taini; Jin, Ke; Gao, Ning; Xiu, Pengyuan; Zhang, Yanwen; Gao, Fei; Bei, Hongbin; Weber, William J.; Sun, Kai; Dong, Yan; Wang, Lumin

2017-01-01

A group of single-phase concentrated solid-solution alloys (SP-CSAs), including NiFe, NiCoFe, NiCoFeCr, as well as a high entropy alloy NiCoFeCrMn, was irradiated with 3 MeV Ni"2"+ ions at 773 K to a fluence of 5 × 10"1"6 ions/cm"2 for the study of radiation response with increasing compositional complexity. Advanced transmission electron microscopy (TEM) with electron energy loss spectroscopy (EELS) was used to characterize the dislocation loop distribution and radiation-induced segregation (RIS) on defect clusters in the SP-CSAs. The results show that a higher fraction of faulted loops exists in the more compositionally complex alloys, which indicate that increasing compositional complexity can extend the incubation period and delay loop growth. The RIS behaviors of each element in the SP-CSAs were observed as follows: Ni and Co tend to enrich, but Cr, Fe and Mn prefer to deplete near the defect clusters. RIS level can be significantly suppressed by increasing compositional complexity due to the sluggish atom diffusion. According to molecular static (MS) simulations, “disk” like segregations may form near the faulted dislocation loops in the SP-CSAs. Segregated elements tend to distribute around the whole faulted loop as a disk rather than only around the edge of the loop.

Assessing bottled water nitrate concentrations to evaluate total drinking water nitrate exposure and risk of birth defects.

Science.gov (United States)

Weyer, Peter J; Brender, Jean D; Romitti, Paul A; Kantamneni, Jiji R; Crawford, David; Sharkey, Joseph R; Shinde, Mayura; Horel, Scott A; Vuong, Ann M; Langlois, Peter H

2014-12-01

Previous epidemiologic studies of maternal exposure to drinking water nitrate did not account for bottled water consumption. The objective of this National Birth Defects Prevention Study (NBDPS) (USA) analysis was to assess the impact of bottled water use on the relation between maternal exposure to drinking water nitrate and selected birth defects in infants born during 1997-2005. Prenatal residences of 1,410 mothers reporting exclusive bottled water use were geocoded and mapped; 326 bottled water samples were collected and analyzed using Environmental Protection Agency Method 300.0. Median bottled water nitrate concentrations were assigned by community; mothers' overall intake of nitrate in mg/day from drinking water was calculated. Odds ratios for neural tube defects, limb deficiencies, oral cleft defects, and heart defects were estimated using mixed-effects models for logistic regression. Odds ratios (95% CIs) for the highest exposure group in offspring of mothers reporting exclusive use of bottled water were: neural tube defects [1.42 (0.51, 3.99)], limb deficiencies [1.86 (0.51, 6.80)], oral clefts [1.43 (0.61, 3.31)], and heart defects [2.13, (0.87, 5.17)]. Bottled water nitrate had no appreciable impact on risk for birth defects in the NBDPS.

Defect testing of large aperture optics based on high resolution CCD camera

International Nuclear Information System (INIS)

Cheng Xiaofeng; Xu Xu; Zhang Lin; He Qun; Yuan Xiaodong; Jiang Xiaodong; Zheng Wanguo

2009-01-01

A fast testing method on inspecting defects of large aperture optics was introduced. With uniform illumination by LED source at grazing incidence, the image of defects on the surface of and inside the large aperture optics could be enlarged due to scattering. The images of defects were got by high resolution CCD camera and microscope, and the approximate mathematical relation between viewing dimension and real dimension of defects was simulated. Thus the approximate real dimension and location of all defects could be calculated through the high resolution pictures. (authors)

The influence of defects on the transport properties of AgSbPb18Te20 prepared at high pressure and high temperature

International Nuclear Information System (INIS)

Wang Yi; Zhu Pinwen; Jiao Hujun; Chen Haiyong; Ma Yanming; Niu Yingli; Li Yingai; Zhang Lijun; Zhang Tiechen; Gao Chunxiao; Zou Guangtian

2007-01-01

We synthesized polycrystal AgSbPb 18 Te 20 by using the method of high pressure and high temperature, and found that the defects produced by high pressure and high temperature caused the changes of transport properties. X-ray diffraction patterns showed that the cell parameters did not change obviously with synthesis at high pressure, apart from a small fluctuation. The electrical resistivity first increased, and then decreased to one quarter of the original value, as the synthesis pressure changed from low to high. The Seebeck coefficient decreased with the increase of synthesis pressure, and then changed from positive to negative. High pressure and high temperature could cause AgSbPb 18 Te 20 to change from a p-type to n-type semiconductor, increase the carrier concentration at maximum by two orders of magnitude, and shift the infrared absorption edge to a higher energy range. All of these phenomena were regarded as showing that high pressure and high temperature favored the formation of certain defects which could change the band structure and thereby change the transport properties

Carbon allocation and element composition in four Chlamydomonas mutants defective in genes related to the CO2 concentrating mechanism.

Science.gov (United States)

Memmola, Francesco; Mukherjee, Bratati; Moroney, James V; Giordano, Mario

2014-09-01

Four mutants of Chlamydomonas reinhardtii with defects in different components of the CO2 concentrating mechanism (CCM) or in Rubisco activase were grown autotrophically at high pCO2 and then transferred to low pCO2, in order to study the role of different components of the CCM on carbon allocation and elemental composition. To study carbon allocation, we measured the relative size of the main organic pools by Fourier Transform Infrared spectroscopy. Total reflection X-ray fluorescence was used to analyze the elemental composition of algal cells. Our data show that although the organic pools increased their size at high CO2 in all strains, their stoichiometry was highly homeostatic, i.e., the ratios between carbohydrates and proteins, lipid and proteins, and carbohydrates and lipids, did not change significantly. The only exception was the wild-type 137c, in which proteins decreased relative to carbohydrates and lipids, when the cells were transferred to low CO2. It is noticeable that the two wild types used in this study responded differently to the transition from high to low CO2. Malfunctions of the CCM influenced the concentration of several elements, somewhat altering cell elemental stoichiometry: especially the C/P and N/P ratios changed appreciably in almost all strains as a function of the growth CO2 concentration, except in 137c and the Rubisco activase mutant rca1. In strain cia3, defective in the lumenal carbonic anhydrase (CA), the cell quotas of P, S, Ca, Mn, Fe, and Zn were about 5-fold higher at low CO2 than at high CO2. A Principle Components Analysis showed that, mostly because of its elemental composition, cia3 behaved in a substantially different way from all other strains, at low CO2. The lumenal CA thus plays a crucial role, not only for the correct functioning of the CCM, but also for element utilization. Not surprisingly, growth at high CO2 attenuated differences among strains.

Exploring atomic defects in molybdenum disulphide monolayers

KAUST Repository

Hong, Jinhua; Hu, Zhixin; Probert, Matt; Li, Kun; Lv, Danhui; Yang, Xinan; Gu, Lin; Mao, Nannan; Feng, Qingliang; Xie, Liming; Zhang, Jin; Wu, Dianzhong; Zhang, Zhiyong; Jin, Chuanhong; Ji, Wei; Zhang, Xixiang; Yuan, Jun; Zhang, Ze

2015-01-01

Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm '2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

Exploring atomic defects in molybdenum disulphide monolayers

KAUST Repository

Hong, Jinhua

2015-02-19

Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm \\'2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data

Science.gov (United States)

Pankratov, E. L.

2018-05-01

We introduce a model of redistribution of point radiation defects, their interaction between themselves and redistribution of their simplest complexes (divacancies and diinterstitials) in a multilayer structure. The model gives a possibility to describe qualitatively nonmonotonicity of distributions of concentrations of radiation defects on interfaces between layers of the multilayer structure. The nonmonotonicity was recently found experimentally. To take into account the nonmonotonicity we modify recently used in literature model for analysis of distribution of concentration of radiation defects. To analyze the model we used an approach of solution of boundary problems, which could be used without crosslinking of solutions on interfaces between layers of the considered multilayer structures.

Defect studies of thin ZnO films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

2014-01-01

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Fracture mechanical evaluation of high temperature structure and creep-fatigue defect assessment

Energy Technology Data Exchange (ETDEWEB)

Park, Chang Gyu; Kim, Jong Bum; Lee, Jae Han

2004-02-01

This study proposed the evaluation procedure of high temperature structures from the viewpoint of fracture mechanics on the cylindrical structure applicable to the KALIMER, which is developed by KAERI. For the evaluation of structural integrity, linear and non-linear fracture mechanics parameters were analyzed. Parameters used in creep defect growth applicable to high temperature structure of liquid metal reactor and the evaluation codes with these parameters were analyzed. The evaluation methods of defect initiation and defect growth which were established in R5/R6 code(UK), JNC method (Japan) and RCC-MR A16(France) code were analyzed respectively. The evaluation procedure of leak before break applicable to KALIMER was preliminarily developed and proposed. As an application example of defect growth, the creep-fatigue defect growth on circumferential throughwall defect in high temperature cylindrical structure was evaluated by RCC-MR A16 and this application technology was established.

Liver mitochondrial dysfunction and electron transport chain defect induced by high dietary copper in broilers.

Science.gov (United States)

Yang, Fan; Cao, Huabin; Su, Rongsheng; Guo, Jianying; Li, Chengmei; Pan, Jiaqiang; Tang, Zhaoxin

2017-09-01

Copper is an important trace mineral in the diet of poultry due to its biological activity. However, limited information is available concerning the effects of high copper on mitochondrial dysfunction. In this study, 72 broilers were used to investigate the effects of high dietary copper on liver mitochondrial dysfunction and electron transport chain defect. Birds were fed with different concentrations [11, 110, 220, and 330 mg of copper/kg dry matter (DM)] of copper from tribasic copper chloride (TBCC). The experiment lasted for 60 d. Liver tissues on d 60 were subjected to histopathological observation. Additionally, liver mitochondrial function was recorded on d 12, 36, and 60. Moreover, a site-specific defect in the electron transport chain in liver mitochondria was also identified by using various chemical inhibitors of mitochondrial respiration. The results showed different degrees of degeneration, mitochondrial swelling, and high-density electrons in hepatocytes. In addition, the respiratory control ratio (RCR) and oxidative phosphorylation rate (OPR) in liver mitochondria increased at first and then decreased in high-dose groups. Moreover, hydrogen peroxide (H2O2) generation velocity in treated groups was higher than that in control group, which were magnified by inhibiting electron transport at Complex IV. The results indicated that high dietary copper could decline liver mitochondrial function in broilers. The presence of a site-specific defect at Complex IV in liver mitochondria may be responsible for liver mitochondrial dysfunction caused by high dietary copper. © 2017 Poultry Science Association Inc.

Positron beam lifetime spectroscopy of atomic scale defect distributions in bulk and microscopic volumes

International Nuclear Information System (INIS)

Howell, R.H.; Cowan, T.E.; Hartley, J.; Sterne, P.; Brown, B.

1996-05-01

We are developing a defect analysis capability based on two positron beam lifetime spectrometers: the first is based on a 3 MeV electrostatic accelerator and the second on our high current linac beam. The high energy beam lifetime spectrometer is operational and positron lifetime analysis is performed with a 3 MeV positron beam on thick samples. It is being used for bulk sample analysis and analysis of samples encapsulated in controlled environments for insitu measurements. A second, low energy, microscopically focused, pulsed positron beam for defect analysis by positron lifetime spectroscopies is under development at the LLNL high current positron source. This beam will enable defect specific, 3-D maps of defect concentration with sub-micron location resolution and when coupled with first principles calculations of defect specific positron lifetimes it will enable new levels of defect concentration mapping and defect identification

Conversion of concentrated solar thermal energy into chemical energy.

Science.gov (United States)

Tamaura, Yutaka

2012-01-01

When a concentrated solar beam is irradiated to the ceramics such as Ni-ferrite, the high-energy flux in the range of 1500-2500 kW/m(2) is absorbed by an excess Frenkel defect formation. This non-equilibrium state defect is generated not by heating at a low heating-rate (30 K/min), but by irradiating high flux energy of concentrated solar beam rapidly at a high heating rate (200 K/min). The defect can be spontaneously converted to chemical energy of a cation-excess spinel structure (reduced-oxide form) at the temperature around 1773 K. Thus, the O(2) releasing reaction (α-O(2) releasing reaction) proceeds in two-steps; (1) high flux energy of concentrated solar beam absorption by formation of the non-equilibrium Frenkel defect and (2) the O(2) gas formation from the O(2-) in the Frenkel defect even in air atmosphere. The 2nd step proceeds without the solar radiation. We may say that the 1st step is light reaction, and 2nd step, dark reaction, just like in photosynthesis process.

Raman D-band in the irradiated graphene: Origin of the non-monotonous dependence of its intensity with defect concentration

International Nuclear Information System (INIS)

Codorniu Pujals, Daniel

2013-01-01

Raman spectroscopy is one of the most used experimental techniques in studying irradiated carbon nanostructures, in particular graphene, due to its high sensibility to the presence of defects in the crystalline lattice. Special attention has been given to the variation of the intensity of the Raman D-band of graphene with the concentration of defects produced by irradiation. Nowadays, there are enough experimental evidences about the non-monotonous character of that dependence, but the explanation of this behavior is still controversial. In the present work we developed a simplified mathematical model to obtain a functional relationship between these two magnitudes and showed that the non-monotonous dependence is intrinsic to the nature of the D-band and that it is not necessarily linked to amorphization processes. The obtained functional dependence was used to fit experimental data taken from other authors. The determination coefficient of the fitting was 0.96.

Study on on-machine defects measuring system on high power laser optical elements

Science.gov (United States)

Luo, Chi; Shi, Feng; Lin, Zhifan; Zhang, Tong; Wang, Guilin

2017-10-01

The influence of surface defects on high power laser optical elements will cause some harm to the performances of imaging system, including the energy consumption and the damage of film layer. To further increase surface defects on high power laser optical element, on-machine defects measuring system was investigated. Firstly, the selection and design are completed by the working condition analysis of the on-machine defects detection system. By designing on processing algorithms to realize the classification recognition and evaluation of surface defects. The calibration experiment of the scratch was done by using the self-made standard alignment plate. Finally, the detection and evaluation of surface defects of large diameter semi-cylindrical silicon mirror are realized. The calibration results show that the size deviation is less than 4% that meet the precision requirement of the detection of the defects. Through the detection of images the on-machine defects detection system can realize the accurate identification of surface defects.

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Energy Technology Data Exchange (ETDEWEB)

Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

2015-07-28

Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27 MeV electrons

Science.gov (United States)

Joita, A. C.; Nistor, S. V.

2018-04-01

Enhancing the long term stable performance of silicon detectors used for monitoring the position and flux of the particle beams in high energy physics experiments requires a better knowledge of the nature, stability, and transformation properties of the radiation defects created over the operation time. We report the results of an electron spin resonance investigation in the nature, transformation, and long term stability of the irradiation paramagnetic point defects (IPPDs) produced by high fluence (2 × 1016 cm-2), high energy (27 MeV) electrons in n-type, P-doped standard floating zone silicon. We found out that both freshly irradiated and aged (i.e., stored after irradiation for 3.5 years at 250 K) samples mainly contain negatively charged tetravacancy and pentavacancy defects in the first case and tetravacancy defects in the second one. The fact that such small cluster vacancy defects have not been observed by irradiation with low energy (below 5 MeV) electrons, but were abundantly produced by irradiation with neutrons, strongly suggests the presence of the same mechanism of direct formation of small vacancy clusters by irradiation with neutrons and high energy, high fluence electrons, in agreement with theoretical predictions. Differences in the nature and annealing properties of the IPPDs observed between the 27 MeV electrons freshly irradiated, and irradiated and aged samples were attributed to the presence of a high concentration of divacancies in the freshly irradiated samples, defects which transform during storage at 250 K through diffusion and recombination processes.

Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect

Energy Technology Data Exchange (ETDEWEB)

Sharma, Dhananjay K., E-mail: dhananjay@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Fateixa, Sara [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Hortigüela, María J. [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Vidyasagar, Reddithota [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Otero-Irurueta, Gonzalo [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Nogueira, Helena I.S. [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Singh, Manoj Kumar [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Kholkin, Andrei, E-mail: kholkin@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

2017-05-15

Tuning the band-gap of graphene is a current need for real device applications. Copper (Cu) as a substrate plays a crucial role in graphene deposition. Here we report the fabrication of in-situ nitrogen (N) doped graphene via chemical vapor deposition (CVD) technique and the effect of Cu substrate thickness on the growth mechanism. The ratio of intensities of G and D peaks was used to evaluate the defect concentration based on local activation model associated with the distortion of the crystal lattice due to incorporation of nitrogen atoms into graphene lattice. The results suggest that Cu substrate of 20 µm in thickness exhibits higher defect density (1.86×10{sup 12} cm{sup −2}) as compared to both 10 and 25 µm thick substrates (1.23×10{sup 12} cm{sup −2} and 3.09×10{sup 11} cm{sup −2}, respectively). Furthermore, High Resolution -X-ray Photoelectron Spectroscopy (HR-XPS) precisely affirms ~0.4 at% of nitrogen intercalations in graphene. Our results show that the substitutional type of nitrogen doping dominates over the pyridinic configuration. In addition, X-ray diffraction (XRD) shows all the XRD peaks associated with carbon. However, the peak at ~24° is suppressed by the substrate peaks (Cu). These results suggest that nitrogen atoms can be efficiently incorporated into the graphene using thinner copper substrates, rather than the standard 25 µm ones. This is important for tailoring the properties by graphene required for microelectronic applications.

Evaluation procedure of creep-fatigue defect growth in high temperature condition and application

International Nuclear Information System (INIS)

Park, Chang Gyu; Kim, Jong Bum; Lee, Jae Han

2003-12-01

This study proposed the evaluation procedure of creep-fatigue defect growth on the high-temperature cylindrical structure applicable to the KALIMER, which is developed by KAERI. Parameters used in creep defect growth and the evaluation codes with these parameters were analyzed. In UK, the evaluation procedure of defect initiation and growth were proposed with R5/R6 code. In Japan, simple evauation method was proposed by JNC. In France, RCC-MR A16 code which was evaluation procedure of the creep-fatigue defect initiation and growth related to leak before break was developed, and equations related to load conditions were modified lately. As an application example, the creep-fatigue defect growth on circumferential semi-elliptical surface defect in high temperature cylindrical structure was evaluated by RCC-MR A16

Application of concentrated growth factors in reconstruction of bone defects after removal of large jaw cysts: The two cases report

Directory of Open Access Journals (Sweden)

Mirković Siniša

2015-01-01

Full Text Available Introduction. Coagulation and blood clot formation in bone defects is sometimes followed by retraction of a blood clot and serum extrusion, thus producing peripheral serum-filled spaces between bony wall and coagulum. This can result in a higher incidence of postoperative complications. Stabilization of blood coagulum, which enables successful primary healing, may be accomplished by autotransplantation, allotransplantation, xenotransplantation, or application of autologous platelet concentrate and concentrated growth factors (CGF. Case report. Two patients with large cystic lesions in the upper and lower jaw were presented. In both patients postoperative bony defects were filled with autologous fibrin rich blocks containing CGF. Postoperative course passed uneventfully. Conclusion. Application of fibrin rich blocks containing CGF is one of the possible methods for reconstruction of bone defects. CGF can be applied alone or mixed with a bone graft. The method is relatively simple, without risk of transmissible and allergic diseases and economically feasible.

Defect formation in heavily doped Si upon irradiation

International Nuclear Information System (INIS)

Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

1981-01-01

The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

Mechanical properties of highly defective graphene: from brittle rupture to ductile fracture.

Science.gov (United States)

Xu, Lanqing; Wei, Ning; Zheng, Yongping

2013-12-20

Defects are generally believed to deteriorate the superlative performance of graphene-based devices but may also be useful when carefully engineered to tailor the local properties and achieve new functionalities. Central to most defect-associated applications is the defect coverage and arrangement. In this work, we investigate, by molecular dynamics simulations, the mechanical properties and fracture dynamics of graphene sheets with randomly distributed vacancies or Stone-Wales defects under tensile deformations over a wide defect coverage range. With defects presented, an sp-sp(2) bonding network and an sp-sp(2)-sp(3) bonding network are observed in vacancy-defected and Stone-Wales-defected graphene, respectively. The ultimate strength degrades gradually with increasing defect coverage and saturates in the high-ratio regime, whereas the fracture strain presents an unusual descending-saturating-improving trend. In the dense vacancy defect situation, the fracture becomes more plastic and super-ductility is observed. Further fracture dynamics analysis reveals that the crack trapping by sp-sp(2) and sp-sp(2)-sp(3) rings and the crack-tip blunting account for the ductile fracture, whereas geometric rearrangement on the entire sheet for vacancy defects and geometric rearrangement on the specific defect sites for Stone-Wales defects account for their distinctive rules of the evolution of the fracture strain.

Neutron diffraction and lattice defects

International Nuclear Information System (INIS)

Hamaguchi, Yoshikazu

1974-01-01

Study on lattice defects by neutron diffraction technique is described. Wave length of neutron wave is longer than that of X-ray, and absorption cross-section is small. Number of defects observed by ESR is up to several defects, and the number studied with electron microscopes is more than 100. Information obtained by neutron diffraction concerns the number of defects between these two ranges. For practical analysis, several probable models are selected from the data of ESR or electron microscopes, and most probable one is determined by calculation. Then, defect concentration is obtained from scattering cross section. It is possible to measure elastic scattering exclusively by neutron diffraction. Minimum detectable concentration estimated is about 0.5% and 10 20 - 10 21 defects per unit volume. A chopper and a time of flight system are used as a measuring system. Cold neutrons are obtained from the neutron sources inserted into reactors. Examples of measurements by using similar equipments to PTNS-I system of Japan Atomic Energy Research Institute are presented. Interstitial concentration in the graphite irradiated by fast neutrons is shown. Defects in irradiated MgO were also investigated by measuring scattering cross section. Study of defects in Ge was made by measuring total cross section, and model analysis was performed in comparison with various models. (Kato, T.)

Mechanical properties of highly defective graphene: from brittle rupture to ductile fracture

International Nuclear Information System (INIS)

Xu, Lanqing; Wei, Ning; Zheng, Yongping

2013-01-01

Defects are generally believed to deteriorate the superlative performance of graphene-based devices but may also be useful when carefully engineered to tailor the local properties and achieve new functionalities. Central to most defect-associated applications is the defect coverage and arrangement. In this work, we investigate, by molecular dynamics simulations, the mechanical properties and fracture dynamics of graphene sheets with randomly distributed vacancies or Stone–Wales defects under tensile deformations over a wide defect coverage range. With defects presented, an sp–sp 2 bonding network and an sp–sp 2 –sp 3 bonding network are observed in vacancy-defected and Stone–Wales-defected graphene, respectively. The ultimate strength degrades gradually with increasing defect coverage and saturates in the high-ratio regime, whereas the fracture strain presents an unusual descending–saturating–improving trend. In the dense vacancy defect situation, the fracture becomes more plastic and super-ductility is observed. Further fracture dynamics analysis reveals that the crack trapping by sp–sp 2 and sp–sp 2 –sp 3 rings and the crack-tip blunting account for the ductile fracture, whereas geometric rearrangement on the entire sheet for vacancy defects and geometric rearrangement on the specific defect sites for Stone–Wales defects account for their distinctive rules of the evolution of the fracture strain. (paper)

High temperature defect equilibrium in ZnS:Cu single crystals

Energy Technology Data Exchange (ETDEWEB)

Lott, K.; Shinkarenko, S.; Tuern, L.; Nirk, T.; Oepik, A. [Department of Materials Science, Tallinn University of Technology, Tallinn (Estonia); Kallavus, U. [Centre for Materials Research, Tallinn University of Technology, Tallinn (Estonia); Gorokhova, E. [Scientific Research and Technological Institute of Optical Material Science, S. I. Vavilov State Optical Institute, All-Russia Science Center, St. Petersburg (Russian Federation); Grebennik, A.; Vishnjakov, A. [Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Moscow (Russian Federation)

2010-07-15

High temperature investigations in ZnS:Cu crystals were performed under defined conditions. High temperature electrical conductivity and copper solubility data were obtained under different component vapour pressures and under different sample temperatures. The experimental data at sulphur vapour pressure can be explained by the inclusion of abnormal site occupation i.e. by antistructural disorder. Compensating association of copper with this antistructure defect may occur. Antistructure disorder disappears with increasing of zinc vapour pressure and with increasing role of holes in bipolar conductivity. The method for solving the system of quasichemical reactions without approximation was used to model high temperature defect equilibrium. This model contains antistructure disorder and copper solubility limitation. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

International Nuclear Information System (INIS)

Londos, C A; Andrianakis, A; Emtsev, V V; Ohyama, H

2009-01-01

Formation processes of vacancy-oxygen (VO) and carbon interstitial-oxygen interstitial (C i O i ) complexes in electron-irradiated Czochralski-grown Si crystals (Cz–Si), also doped with Ge, are investigated. IR spectroscopy measurements are employed to monitor the production of these defects. In Cz–Si with carbon concentrations [C s ] up to 1 × 10 17 cm −3 and Ge concentrations [Ge] up to 1 × 10 20 cm −3 the production rate of VO defects as well as the rate of oxygen loss show a slight growth of about 10% with the increasing Ge concentration. At high concentrations of carbon [C s ] around 2 × 10 17 cm −3 the production rate of VO defects is getting larger by ∼40% in Cz–Si:Ge at Ge concentrations around 1 × 10 19 cm −3 and then at [Ge] ≈ 2 × 10 20 cm −3 this enlargement drops to ∼13%, thus approaching the values characteristic of lesser concentrations of carbon. A similar behavior against Ge concentration displays the production rate of C i O i complexes. The same trend is also observed for the rate of carbon loss, whereas the trend for the rate of oxygen loss is opposite. The behavior of Ge atoms is different at low and high concentrations of this isoelectronic impurity in Cz–Si. At low concentrations most isolated Ge atoms serve as temporary traps for vacancies preventing them from indirect annihilation with self-interstitials. At high concentrations Ge atoms are prone to form clusters. The latter ones are traps for vacancies and self-interstitials due to the strain fields, increasing the importance of indirect annihilation of intrinsic point defects. Such a model allows one to give a plausible explanation for the obtained results. A new band at 994 cm −1 seen only in irradiated Ge-doped Cz–Si is also studied. Interestingly, its annealing behavior was found to be very similar to that of VO complexes

Real-time defect detection on highly reflective curved surfaces

Science.gov (United States)

Rosati, G.; Boschetti, G.; Biondi, A.; Rossi, A.

2009-03-01

This paper presents an automated defect detection system for coated plastic components for the automotive industry. This research activity came up as an evolution of a previous study which employed a non-flat mirror to illuminate and inspect high reflective curved surfaces. According to this method, the rays emitted from a light source are conveyed on the surface under investigation by means of a suitably curved mirror. After the reflection on the surface, the light rays are collected by a CCD camera, in which the coating defects appear as shadows of various shapes and dimensions. In this paper we present an evolution of the above-mentioned method, introducing a simplified mirror set-up in order to reduce the costs and the complexity of the defect detection system. In fact, a set of plane mirrors is employed instead of the curved one. Moreover, the inspection of multiple bend radius parts is investigated. A prototype of the machine vision system has been developed in order to test this simplified method. This device is made up of a light projector, a set of plane mirrors for light rays reflection, a conveyor belt for handling components, a CCD camera and a desktop PC which performs image acquisition and processing. Like in the previous system, the defects are identified as shadows inside a high brightness image. At the end of the paper, first experimental results are presented.

Synthesis of hierarchical conductive C/LiFePO_4/carbon nanotubes composite with less antisite defects for high power lithium-ion batteries

International Nuclear Information System (INIS)

Song, Jianjun; Shao, Guangjie; Ma, Zhipeng; Wang, Guiling; Yang, Jing

2015-01-01

Graphical abstract: The hierarchical conductive C/LiFePO4/CNTs composite with less antisite defects is synthesized by a modified solvothemal process and delivers superior electrochemical performance with high rate capability and good capacity retention. - Abstract: The low electronic conductivity and Li ion diffusion ability are two major obstacles to realize its wide application for LiFePO_4 materials. The material with hierarchical conductive structure and lower antisite defects concentration can effectively enhance the electronic conductivity and Li ion diffusion ability. We firstly report here a modified solvothemal process for the fabrication of hierarchical conductive C/LiFePO_4/CNTs composite with less antisite defects. It is found that the modified solvothemal process is facilitated to decrease Fe_L_i antisite defects and enhance the electronic continuity between LFP and CNTs. In favor of its unique properties, the C/LFP/CNTs composites can deliver superior rate capability and cycling stability. Remarkably, even at a high rate of 20C (3400 mA g"−"1), a high initial discharge capacity of 91.6 mAh g"−"1 and good cycle retention of 95% with almost 100% coulombic efficiency are still obtained after 100 cycles.

Defect kinetics in novel detector materials

CERN Document Server

MacEvoy, B C

2000-01-01

Silicon particle detectors will be used extensively in experiments at the CERN Large Hadron Collider, where unprecedented particle fluences will cause significant atomic displacement damage. We present a model of the evolution of defect concentrations and consequent electrical behaviour in "novel" detector materials with various oxygen and carbon impurity concentrations. The divacancy-oxygen (V/sub 2/O) defect is identified as the cause of changes in device characteristics during /sup 60/Co gamma irradiation. In the case of hadron irradiation changes in detector doping concentration (N/sub eff/) are dominated by cluster defects, in particular the divacancy (V/sub 2/), which exchange charge directly via a non-Shockley-Read- Hall mechanism. The V/sub 2/O defect also contributes to Ne/sub eff/. This defect is more copiously produced during 24 GeV/c proton irradiation than during 1 MeV neutron irradiation on account of the higher vacancy introduction rate, hence the radiation hardness of materials is more sensiti...

An exploratory analysis of the relationship between ambient ozone and particulate matter concentrations during early pregnancy and selected birth defects in Texas

Science.gov (United States)

Background: Associations between ozone (O3) and fine particulate matter (PM2.5) concentrations and birth outcomes have been previously demonstrated. We perform an exploratory analysis of O3 and PM2.5 concentrations during early pregnancy and multiple types of birth defects. Met...

Defect-induced luminescence in sol-gel silica samples doped with Co(II) at different concentrations

Energy Technology Data Exchange (ETDEWEB)

Jimenez-Sandoval, S. [Centro de Investigacion y Estudios Avanzados, Queretaro, Apdo. Postal 1-798, Queretaro, Qro. 76001 (Mexico); Estevez, M. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico); Pacheco, S. [Instituto Mexicano del Petroleo, Av. 100 metros (Mexico); Vargas, S. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico); Rodriguez, R. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico)], E-mail: rogelior@servidor.unam.mx

2007-12-20

The defect-induced luminescence properties of silica samples prepared by the sol-gel method and doped with Co(II) are reported. Silica monoliths doped with different concentrations of Co(II) were laser irradiated (He-Ne 632.8 nm) producing fluorescence. However, this fluorescence is exponentially reduced with the irradiation time, to practically disappear. The rate the fluorescence decays can be well modeled with a double exponential function of the irradiation time, containing two different relaxation times; a baseline is also required to take into account some residual fluorescence. The characteristic times involved in this luminescence quenching process are in the range of seconds. This luminescence suppression can be associated to the local heating produced by the laser irradiation when focused in a small area (2 {mu}m in diameter) on the sample. This heating process reduces physical (grain boundaries, surface states) and chemical (oxygen vacancies produced by the dopant) defects in the sample.

Competition between microstructure and defect in multiaxial high cycle fatigue

Directory of Open Access Journals (Sweden)

F. Morel

2015-07-01

Full Text Available This study aims at providing a better understanding of the effects of both microstructure and defect on the high cycle fatigue behavior of metallic alloys using finite element simulations of polycrystalline aggregates. It is well known that the microstructure strongly affects the average fatigue strength and when the cyclic stress level is close to the fatigue limit, it is often seen as the main source of the huge scatter generally observed in this fatigue regime. The presence of geometrical defects in a material can also strongly alter the fatigue behavior. Nonetheless, when the defect size is small enough, i.e. under a critical value, the fatigue strength is no more affected by the defect. The so-called Kitagawa effect can be interpreted as a competition between the crack initiation mechanisms governed either by the microstructure or by the defect. Surprisingly, only few studies have been done to date to explain the Kitagawa effect from the point of view of this competition, even though this effect has been extensively investigated in the literature. The primary focus of this paper is hence on the use of both FE simulations and explicit descriptions of the microstructure to get insight into how the competition between defect and microstructure operates in HCF. In order to account for the variability of the microstructure in the predictions of the macroscopic fatigue limits, several configurations of crystalline orientations, crystal aggregates and defects are studied. The results of each individual FE simulation are used to assess the response at the macroscopic scale thanks to a probabilistic fatigue criterion proposed by the authors in previous works. The ability of this criterion to predict the influence of defects on the average and the scatter of macroscopic fatigue limits is evaluated. In this paper, particular emphasis is also placed on the effect of different loading modes (pure tension, pure torsion and combined tension and torsion on

Electron scattering by native defects in III-V nitrides and their alloys

International Nuclear Information System (INIS)

Hsu, L.; Walukiewicz, W.

1996-03-01

We have calculated the electron mobilities in GaN and InN taking into consideration scattering by short range potentials, in addition to all standard scattering mechanisms. These potentials are produced by the native defects which are responsible for the high electron concentrations in nominally undoped nitrides. Comparison of the calculated mobilities with experimental data shows that scattering by short range potentials is the dominant mechanism limiting the electron mobilities in unintentionally doped nitrides with large electron concentrations. In the case of Al x Ga 1-x N alloys, the reduction in the electron concentration due to the upward shift of the conduction band relative to the native defect level can account for the experimentally measured mobilities. Resonant scattering is shown to be important when the defect and Fermi levels are close in energy

Defect spectroscopy of single ZnO microwires

Science.gov (United States)

Villafuerte, M.; Ferreyra, J. M.; Zapata, C.; Barzola-Quiquia, J.; Iikawa, F.; Esquinazi, P.; Heluani, S. P.; de Lima, M. M.; Cantarero, A.

2014-04-01

The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm-3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

Capture of impurity atoms by defects and the distribution of the complexes under ion bormbardment of growing films

International Nuclear Information System (INIS)

Radzhabov, T.D.; Iskanderova, Z.A.; Arutyunova, E.O.; Samigulin, K.R.

1982-01-01

Theoretical study of capture of impurity gas atoms with defects during ion introduction of the impurity in the process of film growth with simultaneous diffusion has been carried out. Concentration profiles of forned impurity-defect complexes have been calculated analytically and numerically by means of a computer in film depth and in a substrate; basic peculiarities of impurity component formation captured with defects in a wide range of changing basic experimental parameters have been revealed. Effect of impurity capture with defects on amount and distribution of total concentration of impurity atoms and intensity of complete absorption of bombarding ions in films have been analyzed. Shown is a possibility for producing films with a high concentration level and almost uniform distribution of the impurity-defect complexes for real, achievable an experiment, values of process parameters as well as a possibility for increasing complete absorption of gaseous impurity wiht concentration growth of capture defects-traps

Effect of defect length on rolling contact fatigue crack propagation in high strength steel

Directory of Open Access Journals (Sweden)

T. Makino

2015-10-01

Full Text Available The objective of the present paper is to clarify the effect of defect length in depth direction on rolling contact fatigue (RCF crack propagation in high strength steel. RCF test and synchrotron radiation micro computed tomography (SR micro CT imaging were conducted. In the case of the defect with the 15 m diameter, flaking life decreased with increasing defect length. In a comparison of the CT image and the SEM view, the shapes of defects and the locations of the horizontal cracks were almost the same respectively. The mechanism of RCF crack propagation was discussed by finite element (FE analysis. Defects led to higher tensile residual stress than that without defects in the region where the defect exists. The shear stress range at 0.1 mm in depth on the middle line of the defect and the range of mode II stress intensity factor at the bottom of a vertical crack increased with increasing defect length.

Severe signal loss in diamond beam loss monitors in high particle rate environments by charge trapping in radiation-induced defects

CERN Document Server

Kassel, Florian; Dabrowski, Anne; de Boer, Wim

2016-01-01

The beam condition monitoring leakage (BCML) system is a beam monitoring device in the compact muon solenoid (CMS) experiment at the large hadron collider (LHC). As detectors 32 poly-crystalline (pCVD) diamond sensors are positioned in rings around the beam pipe. Here, high particle rates occur from the colliding beams scattering particles outside the beam pipe. These particles cause defects, which act as traps for the ionization, thus reducing the charge collection efficiency (CCE). However, the loss in CCE was much more severe than expected from low rate laboratory measurements and simulations, especially in single-crystalline (sCVD) diamonds, which have a low initial concentration of defects. The reason why in real experiments the CCE is much worse than in laboratory experiments is related to the ionization rate. At high particle rates the trapping rate of the ionization is so high compared with the detrapping rate, that space charge builds up. This space charge reduces locally the internal electric field,...

The inelastic contribution to high resolution images of defects

International Nuclear Information System (INIS)

Krivanek, O.L.; Ahn, C.C.; Wood, G.J.

1990-01-01

The importance of the contribution due to inelastically scattered electrons to unfiltered HREM images is examined, with emphasis on imaging of defects in semiconductors. Whenever the low energy loss spectrum contains sharp peaks, the contribution is not featureless. At specimen thickness of a few tens of nm, it may change the image appearance in a major way. The strongest effect occurs in high resolution, medium voltage (200 to 500 kV) electron microscope images of defects at focus values minimizing the contrast of the elastic image in low Z materials such as Al and Si. In higher Z materials or those with no sharp 'plasmons', the contribution is small. 23 refs., 8 figs

First-principles study of point defects in CePO{sub 4} monazite

Energy Technology Data Exchange (ETDEWEB)

Yi, Yong; Zhao, Xiaofeng [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Teng, Yuancheng, E-mail: tyc239@163.com [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Bi, Beng [Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010 (China); Wang, Lili [Institute of Computer Application, China Academy of Engineering Physics, Mianyang 621900 (China); Wu, Lang; Zhang, Kuibao [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China)

2016-12-15

CePO{sub 4} monazite is an important radiation-resistant material that may act as a potential minor actinides waste form. Here, we present the results of the calculations for the basic radiation defect modellings in CePO{sub 4} crystals, along with the examination of their defect formation energies and effect of the defect concentrations. This study focused on building a fully-relaxed CePO{sub 4} model with the step iterative optimization from the DFT-GGA calculations using the VASP and CASTEP databases. The results show that the Frenkel defect configuration resulting from the center interstitials has a lower energy when compared to two adjacent orthophosphate centers (the saddle point position). High formation energies were found for all the types of intrinsic Frenkel and vacancy defects. The formation energies conform to the following trend (given in the decreasing order of energy): Ce Frenkel (12.41 eV) > O Frenkel (11.02 eV) > Ce vacancy (9.09 eV) > O vacancy (6.69 eV). We observed almost no effect from the defect concentrations on the defect formation energies.

Electronic structure of point defects in semiconductors

International Nuclear Information System (INIS)

Bruneval, Fabien

2014-01-01

trace concentration (of the order of one part per million). However, owing to the heavy burden of the quantum-mechanical electronic structure calculations, which grow very rapidly with the number of electrons, the present day simulations do not easily exceed a few hundred atoms nowadays. This induces effective defect concentrations of the order of one percent which are very far from the diluted defects observed in the experiments. The extrapolation of high concentrations to low concentrations is difficult because defects in semiconductors often bear a net electric charge which induces long-range interactions between the spuriously interacting charged defects. The first part of my work presents the techniques available in this area, improvements in the techniques and some understanding of these spurious interactions. The second topic addressed in this memoir focuses on improving the electronic structure of defects in semiconductors and insulators. Defects in these materials introduce discrete electronic levels within the band gap of the pristine bulk material. These electronic levels correspond to the electrons involved in the defect states. Their wave function is more or less localized around the defect region and the filling of the state may also vary with the thermodynamic conditions (Fermi level). These levels inside the band gap govern the modification of the properties of electronic and optical transport. Unfortunately the standard ab initio approaches, in the context of Density Functional Theory (DFT), are unable to get the correct band gaps of semiconductors and insulators. This is why many defect properties cannot be predicted with certainty within these approaches. This second part demonstrates how the introduction of the many-body perturbation theory in the so-called GW approximation solves the problem of band gaps and thus allows one to obtain more reliable defect properties. Of course, the field of ab initio electronic structure for defects is far from being

Influence of radiation induced defect clusters on silicon particle detectors

International Nuclear Information System (INIS)

Junkes, Alexandra

2011-10-01

The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10 35 cm -2 s -1 . In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to Φ eq =10 16 cm -2 . The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E C -0.460 eV and E205a at E C -0.395 eV where E C is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V 3 ) defect. Furthermore, isochronal annealing experiments have shown that the V 3 defect exhibits a bistability, as does the leakage current. In oxygen

Influence of radiation induced defect clusters on silicon particle detectors

Energy Technology Data Exchange (ETDEWEB)

Junkes, Alexandra

2011-10-15

The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10{sup 35} cm{sup -2}s{sup -1}. In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to {phi}{sub eq}=10{sup 16} cm{sup -2}. The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E{sub C}-0.460 eV and E205a at E{sub C}-0.395 eV where E{sub C} is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V{sub 3}) defect. Furthermore, isochronal annealing experiments have shown that the V{sub 3} defect

High concentration agglomerate dynamics at high temperatures.

Science.gov (United States)

Heine, M C; Pratsinis, S E

2006-11-21

The dynamics of agglomerate aerosols are investigated at high solids concentrations that are typical in industrial scale manufacture of fine particles (precursor mole fraction larger than 10 mol %). In particular, formation and growth of fumed silica at such concentrations by chemical reaction, coagulation, and sintering is simulated at nonisothermal conditions and compared to limited experimental data and commercial product specifications. Using recent chemical kinetics for silica formation by SiCl4 hydrolysis and neglecting aerosol polydispersity, the evolution of the diameter of primary particles (specific surface area, SSA), hard- and soft-agglomerates, along with agglomerate effective volume fraction (volume occupied by agglomerate) is investigated. Classic Smoluchowski theory is fundamentally limited for description of soft-agglomerate Brownian coagulation at high solids concentrations. In fact, these high concentrations affect little the primary particle diameter (or SSA) but dominate the soft-agglomerate diameter, structure, and volume fraction, leading to gelation consistent with experimental data. This indicates that restructuring and fragmentation should affect product particle characteristics during high-temperature synthesis of nanostructured particles at high concentrations in aerosol flow reactors.

Contribution to the study of defect quenching in gold

International Nuclear Information System (INIS)

Hillairet, J.; Delaplace, J.; Mairy, C.; Adda, Y.

1964-01-01

We have studied by resistivity measurements at low temperatures the influence of quenching conditions on the behaviour of defects in gold. We have quenched from a high temperature and in various liquids gold wires of 0.3 and 0.5 mm diameter having a purity of 99.999 per cent. For cooling rates of 25,000 deg C/second and above all the defects in equilibrium at high temperature are retained by quenching. The annealing of the defects thus obtained occurs in two stages, the first below 150 deg C and the second between 450 and 650 deg C. The mobility energy of the defects which are annealed during the first stage is 0.70 ± 0.06 eV, The annealing kinetics depend on the initial concentration of the defects and of the diameter of the sample. The second stage corresponds to disappearance of the stacking fault tetrahedra which are formed from defect packets during annealing. The formation energy of the defects measured on the 0. 5 mm samples is 0.94 eV. The values obtained with 0,3 mm diameter samples, much lower than 0.94 eV, can be explained by assuming that packets of defects occur at the end of the annealing of the samples. Electron microscope observations have been carried out on strips of annealed gold. (authors) [fr

High resolution deep level transient spectroscopy and process-induced defects in silicon

International Nuclear Information System (INIS)

Evans-Freeman, J.H.; Emiroglu, D.; Vernon-Parry, K.D.

2004-01-01

High resolution, or Laplace, deep level transient spectroscopy (LDLTS) enables the identification of very closely spaced energetic levels in a semiconductor bandgap. DLTS may resolve peaks with a separation of tens of electron volts, but LDLTS can resolve defect energy separations as low as a few MeV. In this paper, we present results from LDLTS applied to ion implantation-induced defects in silicon, with particular emphasis on characterisation of end-of-range interstitial type defects. Silicon was implanted with a variety of ions from mass 28 to 166. A combination of LDLTS and direct capture cross-section measurements was employed to show that electrically active small extended defects were present in the as-implanted samples. Larger dislocations were then generated in Si by oxygenation to act as a control sample. These stacking faults had typical lengths of microns, and their electrical activity was subsequently characterised by LDLTS. This was to establish the sensitivity of LDLTS to defects whose carrier capture is characterised by a non-exponential filling process and an evolving band structure as carrier capture proceeds. The LDLTS spectra show several components in capacitance transients originating from both the end-of-range defects, and the stacking faults, and also clearly show that the carrier emission rates reduce as these extended defects fill with carriers. The end-of-range defects and the stacking faults are shown to have the same electrical behaviour

Chemical stability and defect formation in CaHfO3

KAUST Repository

Alay-E-Abbas, Syed Muhammad

2014-04-01

Defects in CaHfO3 are investigated by ab initio calculations based on density functional theory. Pristine and anion-deficient CaHfO 3 are found to be insulating, whereas cation-deficient CaHfO 3 is hole-doped. The formation energies of neutral and charged cation and anion vacancies are evaluated to determine the stability in different chemical environments. Moreover, the energies of the partial and full Schottky defect reactions are computed. We show that clustering of anion vacancies in the HfO layers is energetically favorable for sufficiently high defect concentrations and results in metallicity. © 2014 EPLA.

Chemical stability and defect formation in CaHfO3

KAUST Repository

Alay-E-Abbas, Syed Muhammad; Nazir, Safdar; Mun Wong, Kin; Shaukat, Ali; Schwingenschlö gl, Udo

2014-01-01

Defects in CaHfO3 are investigated by ab initio calculations based on density functional theory. Pristine and anion-deficient CaHfO 3 are found to be insulating, whereas cation-deficient CaHfO 3 is hole-doped. The formation energies of neutral and charged cation and anion vacancies are evaluated to determine the stability in different chemical environments. Moreover, the energies of the partial and full Schottky defect reactions are computed. We show that clustering of anion vacancies in the HfO layers is energetically favorable for sufficiently high defect concentrations and results in metallicity. © 2014 EPLA.

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

2015-01-28

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

International Nuclear Information System (INIS)

Elleuch, Omar; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2015-01-01

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor

Study on the intrinsic defects in tin oxide with first-principles method

Science.gov (United States)

Sun, Yu; Liu, Tingyu; Chang, Qiuxiang; Ma, Changmin

2018-04-01

First-principles and thermodynamic methods are used to study the contribution of vibrational entropy to defect formation energy and the stability of the intrinsic point defects in SnO2 crystal. According to thermodynamic calculation results, the contribution of vibrational entropy to defect formation energy is significant and should not be neglected, especially at high temperatures. The calculated results indicate that the oxygen vacancy is the major point defect in undoped SnO2 crystal, which has a higher concentration than that of the other point defect. The property of negative-U is put forward in SnO2 crystal. In order to determine the most stable defects much clearer under different conditions, the most stable intrinsic defect as a function of Fermi level, oxygen partial pressure and temperature are described in the three-dimensional defect formation enthalpy diagrams. The diagram visually provides the most stable point defects under different conditions.

Phosphorus-defect interactions during thermal annealing of ion implanted silicon

Science.gov (United States)

Keys, Patrick Henry

Ion implantation of dopant atoms into silicon generates nonequilibrium levels of crystal defects that can lead to the detrimental effects of transient enhanced diffusion (TED), incomplete dopant activation, and p-n junction leakage. In order to control these effects, it is vital to have a clear understanding of dopant-defect interactions and develop models that account for these interactions. This research focuses on experimentally investigating and modeling the clustering of phosphorus dopant atoms with silicon interstitials. Damage recovery of 40keV Si+ implants in phosphorus doped wells is experimentally analyzed. The effects of background phosphorus concentration, self implant dose, and anneal temperature are investigated. Phosphorus concentrations ranging from 2.0 x 1017 to 4.0 x 1019 cm-3 and Si+ doses ranging from 5.0 x 1013 cm-2 to 2.0 x 1014 cm-2 are studied during 650-800°C anneals. A dramatic reduction in the number of interstitials bound in {311} defects with increasing phosphorus background concentration is observed. It is suggested that the reduction of interstitials in {311} defects at high phosphorus concentrations is due to the formation of phosphorus-interstitial clusters (PICs). The critical concentration for clustering (approximately 1.0 x 1019 cm-3 at 750°C) is strongly temperature dependent and in close agreement with the kink concentration of phosphorus diffusion. Information gained from these "well experiments" is applied to the study of direct phosphorus implantation. An experimental study is conducted on 40keV phosphorus implanted to a dose of 1.0 x 1014 cm-2 during 650-800°C anneals. Electrically inactive PICs are shown to form at concentrations below the solid solubility limit due to high interstitial supersaturations. Data useful for developing a model to accurately predict phosphorus diffusion under nonequilibrium conditions are extracted from the experimental results. A cluster-mediated diffusion model is developed using the

Radiation-Induced Defects in Kaolinite as Tracers of Past Occurrence of Radionuclides in a Natural Analogue of High Level Nuclear Waste Repository

Science.gov (United States)

Allard, T.; Fourdrin, C.; Calas, G.

2007-05-01

Understanding the processes controlling migrations of radioelements at the Earth's surface is an important issue for the long-term safety assessment of high level nuclear waste repositories (HLNWR). Evidence of past occurrence and transfer of radionuclides can be found using radiation-induced defects in minerals. Clay minerals are particularly relevant because of their widespread occurrence at the Earth's surface and their finely divided nature which provides high contact area with radioactive fluids. Owing to its sensitivity to radiations, kaolinite can be used as natural, in situ dosimeter. Kaolinite is known to contain radiation-induced defects which are detected by Electron Paramagnetic Resonance. They are differentiated by their nature, their production kinetics and their thermal stability. One of these defects is stable at the scale of geological periods and provides a record of past radionuclide occurrence. Based on artificial irradiations, a methodology has been subsequently proposed to determine paleodose cumulated by kaolinite since its formation. The paleodose can be used to derive equivalent radioelement concentrations, provided that the age of kaolinite formation can be constrained. This allows quantitative reconstruction of past transfers of radioelements in natural systems. An example is given for the Nopal I U-deposit (Chihuahua, Mexico), hosted in hydrothermally altered volcanic tufs and considered as analogue of the Yucca Mountain site. The paleodoses experienced by kaolinites were determined from the concentration of defects and dosimetry parameters of experimental irradiations. Using few geochemical assumption, a equivalent U-content responsible for defects in kaolinite was calculated from the paleodose, a dose rate balance and model ages of kaolinites constrained by tectonic phases. In a former study, the ages were assumptions derived from regional tectonic events. In thepresent study, ages of mineralization events are measured from U

Novel Models to Study Effect of High-Altitude Hypoxic Exposure and Placental Insufficiency on Fetal Oxygen Metabolism and Congenital Heart Defects

Science.gov (United States)

2017-10-01

Metabolism and Congenital Heart Defects PRINCIPAL INVESTIGATOR: Steven Fisher, MD RECIPIENT: University of Maryland, Baltimore REPORT DATE...examined in fetal heart vs other tissues. Pregnant ODD-Luc dams age 3-6 months will inhale O2 concentrations ranging from 8-21% O2 x 4 h...Congenital Heart Defects in at-risk pregnancies. The first objective was to use a novel reporter of O2 concentrations, the ODDLuc mouse, to determine the

Agricultural Compounds in Water and Birth Defects.

Science.gov (United States)

Brender, Jean D; Weyer, Peter J

2016-06-01

Agricultural compounds have been detected in drinking water, some of which are teratogens in animal models. The most commonly detected agricultural compounds in drinking water include nitrate, atrazine, and desethylatrazine. Arsenic can also be an agricultural contaminant, although arsenic often originates from geologic sources. Nitrate has been the most studied agricultural compound in relation to prenatal exposure and birth defects. In several case-control studies published since 2000, women giving birth to babies with neural tube defects, oral clefts, and limb deficiencies were more likely than control mothers to be exposed to higher concentrations of drinking water nitrate during pregnancy. Higher concentrations of atrazine in drinking water have been associated with abdominal defects, gastroschisis, and other defects. Elevated arsenic in drinking water has also been associated with birth defects. Since these compounds often occur as mixtures, it is suggested that future research focus on the impact of mixtures, such as nitrate and atrazine, on birth defects.

Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Saha, B., E-mail: biswajit.physics@gmail.com [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India); Department of Physics, National Institute of Technology Agartala, Jirania 799046, Tripura (India); Das, N.S.; Chattopadhyay, K.K. [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India)

2014-07-01

Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. - Highlights: • ZnO thin films prepared by radio frequency magnetron sputtering technique • Synthesis process was stimulated to introduce Schottky-type point defects. • Point defects and external doping of Ni made ZnO thin films more functional. • Point defect induced high electrical conductivity in ZnO thin film. • Significant shift in optical bandgap observed in ZnO with Ni doping concentrations.

Exploring and Controlling Intrinsic Defect Formation in SnO2 Thin Films

KAUST Repository

Porte, Yoann; Maller, Robert; Faber, Hendrik; Alshareef, Husam N.; Anthopoulos, Thomas D; McLachlan, Martyn

2015-01-01

By investigating the influence of key growth variables on the measured structural and electrical properties of SnO2 prepared by Pulsed Laser Deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation. Variation of growth temperatures shows oxygen vacancies (VO) as the dominant defect which can be compensated for by thermal oxidation at temperatures > 500°C. As a consequence films with carrier concentrations in the range 1016-1019 cm-3 can be prepared by adjusting temperature alone. By altering the background oxygen pressure (PD) we observe a change in the dominant defect - from tin interstitials (Sni) at low PD (< 50 mTorr) to VO at higher oxygen pressures with similar ranges of carrier concentrations observed. Finally we demonstrate the importance of controlling the composition target surface used for PLD by exposing a target to > 100,000 laser pulses. Here carrier concentrations > 1x1020 cm-3 are observed that are attributed to high concentrations of Sni which cannot be completely compensated for by modifying the growth parameters.

Exploring and Controlling Intrinsic Defect Formation in SnO2 Thin Films

KAUST Repository

Porte, Yoann

2015-12-15

By investigating the influence of key growth variables on the measured structural and electrical properties of SnO2 prepared by Pulsed Laser Deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation. Variation of growth temperatures shows oxygen vacancies (VO) as the dominant defect which can be compensated for by thermal oxidation at temperatures > 500°C. As a consequence films with carrier concentrations in the range 1016-1019 cm-3 can be prepared by adjusting temperature alone. By altering the background oxygen pressure (PD) we observe a change in the dominant defect - from tin interstitials (Sni) at low PD (< 50 mTorr) to VO at higher oxygen pressures with similar ranges of carrier concentrations observed. Finally we demonstrate the importance of controlling the composition target surface used for PLD by exposing a target to > 100,000 laser pulses. Here carrier concentrations > 1x1020 cm-3 are observed that are attributed to high concentrations of Sni which cannot be completely compensated for by modifying the growth parameters.

Spectroscopic study of defects and inclusions in bulk poly- and nanocrystalline diamond aggregates

International Nuclear Information System (INIS)

Shiryaev, A A; Iakoubovskii, K; Grambole, D; Dubrovinskaia, N

2006-01-01

Recently, a novel form of nanodiamond exhibiting unusual mechanical properties has been synthesized by high-pressure high-temperature (HPHT) treatment of C 60 fullerene, amorphous carbon and diamond powder. In this study, we have characterized the dominant defects in this nanodiamond by a combination of optical absorption, luminescence, Raman, electron spin resonance and elastic recoil detection techniques. Unusually high concentrations (∼0.4 at.%) of hydrogen and very low concentrations of nitrogen (∼10 -5 at.%) have been detected in diamond grown from C 60 . Although most of hydrogen is shown to originate from inclusions of foreign phases, such as water, significant concentrations (∼0.01 at.%) of hydrogen were also detected as a point defect in the nanodiamond grains. Observed structural differences between the samples made from various carbonaceous materials are attributed to different behaviour of the starting compounds during HPHT treatment. (letter to the editor)

New aspects on the contribution of primary defects in silicon due to long-time degradation of detectors operating in high fields of radiation

International Nuclear Information System (INIS)

Lazanu, Sorina; Lazanu, Ionel

2006-01-01

Full text: Silicon detectors will represent an important option for the next generation of experiments in high energy physics, for astroparticle and nuclear experiments, where the requirements to operate long time in high radiation environments will represent a major problem. After the long-time operation in high radiation fields, the bulk displacement damage produces the following effects at the device level: increase of the leakage current, decrease of the satisfactory Signal/Noise ratio, increase of the effective carrier concentration, and thus of the depletion voltage, decrease of the charge collection efficiency up to unacceptable levels. In this contribution we investigate the new perspective in understanding the fundamental phenomena in silicon and implications for the degradation of the characteristics of detectors given by the consideration of the existence of the new primary defect: fourfold coordinated defect, Si FFCD , with a lower value of the formation energy by comparison with the 'classically' known vacancies and interstitials. Predicted by Goedecker and co-workers, its characteristics were indirectly determined by Lazanu and Lazanu. The correlation between the rate of generation of primary defects, material composition and observable effects is investigated considering different growth technologies and resistivities (up to tens of kΩcm) as time and fluence dependencies. This allows to estimate the expected behaviour of the materials and detectors in concrete environments at the next generations of high energy physics experiments as SLHC or VLHC for example. This new defect could represent the elementary block for new extended defects and in principle it could generate local amorphization of the semiconductor. Its existence and characteristics in other semiconductors is also investigated. (author)

Annealing of radiation-induced defects in silicon in a simplified phenomenological model

International Nuclear Information System (INIS)

Lazanu, S.; Lazanu, I.

2001-01-01

The concentration of primary radiation-induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitials that are essentially unstable in silicon. They interact via migration, recombination, annihilation or produce other defects. In the present work, the time evolution of the concentration of defects induced by pions in medium and high resistivity silicon for detectors is modelled, after irradiation. In some approximations, the differential equations representing the time evolution processes could be decoupled. The theoretical equations so obtained are solved analytically in some particular cases, with one free parameter, for a wide range of particle fluences and/or for a wide energy range of incident particles, for different temperatures; the corresponding stationary solutions are also presented

Unusual and highly tunable missing-linker defects in zirconium metal-organic framework UiO-66 and their important effects on gas adsorption.

Science.gov (United States)

Wu, Hui; Chua, Yong Shen; Krungleviciute, Vaiva; Tyagi, Madhusudan; Chen, Ping; Yildirim, Taner; Zhou, Wei

2013-07-17

UiO-66 is a highly important prototypical zirconium metal-organic framework (MOF) compound because of its excellent stabilities not typically found in common porous MOFs. In its perfect crystal structure, each Zr metal center is fully coordinated by 12 organic linkers to form a highly connected framework. Using high-resolution neutron power diffraction technique, we found the first direct structural evidence showing that real UiO-66 material contains significant amount of missing-linker defects, an unusual phenomenon for MOFs. The concentration of the missing-linker defects is surprisingly high, ∼10% in our sample, effectively reducing the framework connection from 12 to ∼11. We show that by varying the concentration of the acetic acid modulator and the synthesis time, the linker vacancies can be tuned systematically, leading to dramatically enhanced porosity. We obtained samples with pore volumes ranging from 0.44 to 1.0 cm(3)/g and Brunauer-Emmett-Teller surface areas ranging from 1000 to 1600 m(2)/g, the largest values of which are ∼150% and ∼60% higher than the theoretical values of defect-free UiO-66 crystal, respectively. The linker vacancies also have profound effects on the gas adsorption behaviors of UiO-66, in particular CO2. Finally, comparing the gas adsorption of hydroxylated and dehydroxylated UiO-66, we found that the former performs systematically better than the latter (particularly for CO2) suggesting the beneficial effect of the -OH groups. This finding is of great importance because hydroxylated UiO-66 is the practically more relevant, non-air-sensitive form of this MOF. The preferred gas adsorption on the metal center was confirmed by neutron diffraction measurements, and the gas binding strength enhancement by the -OH group was further supported by our first-principles calculations.

Effect of traps and defects on high temperature performance of Ge channel junctionless nanowire transistors

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Chuanchuan Sun

2017-07-01

Full Text Available We investigate the effect of traps and defects on high temperature performance of p-type germanium-on-insulator (GOI based junctionless nanowire transistors (JNTs at temperatures ranging from 300 to 450 K. Temperature dependence of the main electrical parameters, such as drive current (Ion, leakage current (Ioff, threshold voltage (Vt, transconductance (Gm and subthreshold slope (SS are extracted and compared with the reported results of conventional inversion mode (IM MOSFETs and Si based JNTs. The results show that the high interface trap density (Dit and defects can degrade high temperature reliability of GOI based JNTs significantly, in terms of Ioff, Vt variation, Gm-max and SS values. The Ioff is much more dependent on temperature than Ion and mainly affected by trap-assisted-tunneling (TAT current. The Vt variation with temperature is larger than that for IM MOSFETs and SOI based JNTs, which can be mostly attributed to the high Dit. The high Dit can also induce high SS values. The maximum Gm has a weak dependence on temperature and is significantly influenced by neutral defects scattering. Limiting the Dit and neutral defect densities is critical for the reliability of GOI based JNTs working at high temperatures.

Energy position of bistable defect (CiCs)0 in 'B' configuration in a forbidden zone of n-Si

International Nuclear Information System (INIS)

Dolgolenko, A.P.; Litovchenko, P.G.; Varentsov, M.D.

2003-01-01

Float-zone and phosphorus-doped n-Si samples after irradiation by fast-pile neutrons and subsequent annealing at room temperature were investigated. The calculation of effective concentration of carriers after irradiation was carried out in the framework of Gossick's model taking into account the recharges of defects both in conducting matrix of n-Si and in the space-charge region of defect clusters. The distribution function of electrons on the acceptor level of bistable defect (C i C s ) 0 when the concentration of this defect is the function of the Fermi level in conducting matrix of n-Si is determined. The concentration of bistable interstitial-carbon-substitutional-carbon pair and its energy level at (E c - 0,123 eV) in forbidden band of silicon were calculated. On the observable level of stable configuration C i C s (A - )-defects at (E c - 0,147 eV) the theoretical change of carriers concentration in the conduction band simulated by the recharges (C i C s ) 0 was imposed. The concentration of these (C i C s ) 0 -defects has been changed in the process of their recharges. It is shown that in n-Si with high carbon and oxygen concentration after affiliating of oxygen atoms to bistable defect (C i C s ) 0 in a forbidden band of n-Si the stable defects not only in 'A' but also in 'B' configurations are formed with energy levels at (E c - 0,13 eV) and (E c - 0,09 eV)

Defects and properties of cadmium oxide based transparent conductors

International Nuclear Information System (INIS)

Yu, Kin Man; Detert, D. M.; Dubon, O. D.; Chen, Guibin; Zhu, Wei; Liu, Chaoping; Grankowska, S.; Hsu, L.; Walukiewicz, Wladek

2016-01-01

Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10 20 /cm 3 and mobility in the range of 40–100 cm 2 /V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O 2 partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10 −4 to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10 21  cm −3 and electron mobility higher than 120 cm 2 /V s can be achieved. Thermal annealing of doped CdO films in N 2 ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited by a background acceptor concentration of

Defects and properties of cadmium oxide based transparent conductors

Energy Technology Data Exchange (ETDEWEB)

Yu, Kin Man, E-mail: kinmanyu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Detert, D. M.; Dubon, O. D. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Chen, Guibin [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Physics Department and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Huaiyin Normal University, Jiangsu 223300 (China); Zhu, Wei [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics and The Center for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026 (China); Liu, Chaoping [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Grankowska, S. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Experimental Physics (IEP UW), Warsaw University, Warsaw (Poland); Hsu, L. [Department of Postsecondary Teaching and Learning, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Walukiewicz, Wladek [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2016-05-14

Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10{sup 20}/cm{sup 3} and mobility in the range of 40–100 cm{sup 2}/V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O{sub 2} partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10{sup −4} to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10{sup 21 }cm{sup −3} and electron mobility higher than 120 cm{sup 2}/V s can be achieved. Thermal annealing of doped CdO films in N{sub 2} ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited

Calibrating a multi-model approach to defect production in high energy collision cascades

International Nuclear Information System (INIS)

Heinisch, H.L.; Singh, B.N.; Diaz de la Rubia, T.

1994-01-01

A multi-model approach to simulating defect production processes at the atomic scale is described that incorporates molecular dynamics (MD), binary collision approximation (BCA) calculations and stochastic annealing simulations. The central hypothesis is that the simple, fast computer codes capable of simulating large numbers of high energy cascades (e.g., BCA codes) can be made to yield the correct defect configurations when their parameters are calibrated using the results of the more physically realistic MD simulations. The calibration procedure is investigated using results of MD simulations of 25 keV cascades in copper. The configurations of point defects are extracted from the MD cascade simulations at the end of the collisional phase, thus providing information similar to that obtained with a binary collision model. The MD collisional phase defect configurations are used as input to the ALSOME annealing simulation code, and values of the ALSOME quenching parameters are determined that yield the best fit to the post-quenching defect configurations of the MD simulations. ((orig.))

Optimization of ultrasonic tube testing with concentric transducers

International Nuclear Information System (INIS)

Dufayet, J.-P.; Gambin, Raymond.

1978-01-01

In order to test tubes by ultrasonics without rotation, concentric transducers can be used with conical mirrors to detect transverse defects and with helical shaped mirrors to detect longitudinal defects. Further optimization studies have been carried out in order to bring the system highly operational. The respective advantages brought by the rotating screen or by our especially designed sectorial transducers are discussed [fr

High defect stage, contralateral defects, and poor flexibility are negative predictive factors of bone union in pediatric and adolescent athletes with spondylolysis.

Science.gov (United States)

Yamazaki, Kazufumi; Kota, Shintaro; Oikawa, Daisuke; Suzuki, Yoshiji

2018-01-01

To identify predisposition to spondylolysis and physical characteristics associated with "bone union" following conservative spondylolysis treatment among pediatric and adolescent athletes. We retrospectively analyzed pediatric and adolescent athletes with spondylolysis who underwent conservative treatment and rehabilitation for three or more consecutive months following sports activity cessation. Patients with terminal spondylolysis or who did not discontinue sports activities were excluded. We compared physical fitness factors in the union and nonunion groups and examined the association between bone union and spondylolysis severity by logistic regression analysis. Of 183 patients with spondylolysis who underwent rehabilitation over a four-year period, 127 patients with 227 defects were included in the final analysis. Bone union was achieved in 66.5% (151/227) of the pars interarticularis defects and 70.1% (89/127) of the patients. On multivariate analysis, stage of pars interarticularis defect (odds ratio [OR], 0.26;p = 0.0027), stage of contralateral pars interarticularis defect (OR, 0.51;p = 0.00026), and straight leg-raising test (OR, 1.06;p = 0.028) were significantly associated with bone union. High defect stage, stage of the contralateral pars interarticularis defect, and poor flexibility were negative prognostic factors of bone healing in athletes with spondylolysis. J. Med. Invest. 65:126-130, February, 2018.

Various categories of defects after surface alloying induced by high current pulsed electron beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Luo, Dian [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tang, Guangze, E-mail: oaktang@hit.edu.cn [School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001 (China); Ma, Xinxin [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Gu, Le [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun, Mingren [School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2015-10-01

Highlights: • Four kinds of defects are found during surface alloying by high current electron beam. • Exploring the mechanism how these defects appear after irradiation. • Increasing pulsing cycles will help to get good surface quality. • Choosing proper energy density will increase surface quality. - Abstract: High current pulsed electron beam (HCPEB) is an attractive advanced materials processing method which could highly increase the mechanical properties and corrosion resistance. However, how to eliminate different kinds of defects during irradiation by HCPEB especially in condition of adding new elements is a challenging task. In the present research, the titanium and TaNb-TiW composite films was deposited on the carburizing steel (SAE9310 steel) by DC magnetron sputtering before irradiation. The process of surface alloying was induced by HCPEB with pulse duration of 2.5 μs and energy density ranging from 3 to 9 J/cm{sup 2}. Investigation of the microstructure indicated that there were several forms of defects after irradiation, such as surface unwetting, surface eruption, micro-cracks and layering. How the defects formed was explained by the results of electron microscopy and energy dispersive spectroscopy. The results also revealed that proper energy density (∼6 J/cm{sup 2}) and multi-number of irradiation (≥50 times) contributed to high quality of alloyed layers after irradiation.

An application of gold diffusion for defect investigation in silicon

International Nuclear Information System (INIS)

Feklisova, O.V.; Yakimov, E.B.

2009-01-01

The application of gold diffusion for defect investigation in Si is illustrated by the diffusion experiments carried out on crystals containing grown-in or specially introduced defects. The efficiency of gold diffusion experiments for monitoring the concentration and spatial distribution of these defects is shown. The effect of vacancy type defects on gold diffusion is illustrated by investigations of nitrogen-doped FZ Si and of Cz Si after rapid thermal annealing. In both these cases the gold depth profile is distinctive for trap limited diffusion. The effect of sinks for self-interstitials on gold diffusion is illustrated by the results obtained on the plastically deformed Si. It is shown that in silicon deformed at relatively low temperatures the gold diffusion is to a great extent determined by the defects in the dislocation trails while in high temperature deformed Si the sinks for self-interstitials are associated with dislocations themselves.

High-contrast coronagraph performance in the presence of focal plane mask defects

Science.gov (United States)

Sidick, Erkin; Shaklan, Stuart; Balasubramanian, Kunjithapatham; Cady, Eric

2014-08-01

We have carried out a study of the performance of high-contrast coronagraphs in the presence of mask defects. We have considered the effects of opaque and dielectric particles of various dimensions, as well as systematic mask fabrication errors and the limitations of material properties in creating dark holes. We employ sequential deformable mirrors to compensate for phase and amplitude errors, and show the limitations of this approach in the presence of coronagraph image-mask defects.

Effects of ZnO Seed Layers Prepared with Various Precursor Concentrations on Structural and Defect Emission Properties of ZnO Nanorods Grown by Hydrothermal Method

Energy Technology Data Exchange (ETDEWEB)

Kim, Soaram; Nam, Giwoong; Leem, Jae-Young; Kim, Yangsoo [Inje University, Gimhae (Korea, Republic of); Kim, Ghun Sik; Yoon, Sung Pil [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

2013-07-15

ZnO nanorods were grown by a hydrothermal method on ZnO seed layers that had previously been prepared from solutions containing various precursor concentrations. The effects of the ZnO seed layers prepared with various precursor concentrations on the structural and defect emissions of the ZnO nanorods were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) spectroscopy. The surface morphology of the ZnO seed layers changed with an increasing precursor concentration, and the diameters and densities of the ZnO nanorods depended on the morphologies of the ZnO seed layers. The ZnO seed layers prepared with various precursor concentrations affected the residual stress in the nanorods grown on the seed layers, the intensity and full widths at half maximum of the 2-theta angle in the XRD spectra for the nanorods, and the intensity and position of the defect emission peak in deep-level emission (DLE) PL spectra for the ZnO nanorods.

Electrochemical Implications of Defects in Carbon Nanotubes

Science.gov (United States)

Hall, Jonathan Peter

The electrochemical behavior of carbon nanotubes (CNTs) containing both intrinsic and extrinsically introduced defects has been investigated through the study of bamboo and hollow multi-walled CNT morphologies. The controlled addition of argon, hydrogen, and chlorine ions in addition to atomic hydrogen and magnesium vapor was used for varying the charge and type of extrinsic defects. To quantify changes in the CNTs upon treatment, Raman spectroscopy and electrochemical techniques were employed. It was indicated from Raman spectroscopy, cyclic voltammetry, electrochemical impedance spectroscopy, and chronopotentiometric experiments that the electrochemical response of hollow type CNTs could be tailored more significantly compared to bamboo type CNTs, which have innately high reactive site densities and are less amenable to modification. Total defect density and edge-plane-like defect concentrations monitored through Raman spectroscopy were used to correlate changes in the electrochemical response of the CNT electrodes as a function of treatment. The implementation of CNT electrodes in a prototypical electrolytic capacitor device was then explored and characterized. Dependencies on source current and redox couple concentration were evaluated, as well as changes in the total capacitance as a function of treatment. Cyclability studies were also performed as a function of source current magnitude to evaluate the longevity of the faradaic currents which typically decrease over time in other similar capacitors. This thesis then concludes with an overall summary of the themes and findings of the research presented in this work.

Polymers under ionizing radiation: the study of energy transfers to radiation induced defects

International Nuclear Information System (INIS)

Ventura, A.

2013-01-01

Radiation-induced defects created in polymers submitted to ionizing radiations, under inert atmosphere, present the same trend as a function of the dose. When the absorbed dose increases, their concentrations increase then level off. This behavior can be assigned to energy transfers from the polymer to the previously created macromolecular defects; the latter acting as energy sinks. During this thesis, we aimed to specify the influence of a given defect, namely the trans-vinylene, in the behavior of polyethylene under ionizing radiations. For this purpose, we proposed a new methodology based on the specific insertion, at various concentrations, of trans-vinylene groups in the polyethylene backbone through chemical synthesis. This enables to get rid of the variety of created defects on one hand and on the simultaneity of their creation on the other hand. Modified polyethylenes, containing solely trans-vinylene as odd groups, were irradiated under inert atmosphere, using either low LET beams (gamma, beta) or high LET beams (swift heavy ions). During irradiations, both macromolecular defects and H 2 emission were quantified. According to experimental results, among all defects, the influence of the trans-vinylene on the behavior of polyethylene is predominant. (author) [fr

Plant photonics: application of optical coherence tomography to monitor defects and rots in onion

International Nuclear Information System (INIS)

Meglinski, I V; Terry, L A; Buranachai, C

2010-01-01

The incidence of physiological and/or pathological defects in many fresh produce types is still unacceptably high and accounts for a large proportion of waste. With increasing interest in food security their remains strong demand in developing reliable and cost effective technologies for non-destructive screening of internal defects and rots, these being deemed unacceptable by consumers. It is well recognized that the internal defects and structure of turbid scattering media can be effectively visualized by using optical coherence tomography (OCT). In the present study, the high spatial resolution and advantages of OCT have been demonstrated for imaging the skins and outer laminae (concentric tissue layers) of intact whole onion bulbs with a view to non-invasively visualizing potential incidence/severity of internal defects

Plant photonics: application of optical coherence tomography to monitor defects and rots in onion

Science.gov (United States)

Meglinski, I. V.; Buranachai, C.; Terry, L. A.

2010-04-01

The incidence of physiological and/or pathological defects in many fresh produce types is still unacceptably high and accounts for a large proportion of waste. With increasing interest in food security their remains strong demand in developing reliable and cost effective technologies for non-destructive screening of internal defects and rots, these being deemed unacceptable by consumers. It is well recognized that the internal defects and structure of turbid scattering media can be effectively visualized by using optical coherence tomography (OCT). In the present study, the high spatial resolution and advantages of OCT have been demonstrated for imaging the skins and outer laminae (concentric tissue layers) of intact whole onion bulbs with a view to non-invasively visualizing potential incidence/severity of internal defects.

Vancomycin graft composite for infected bone defects

International Nuclear Information System (INIS)

Winkler, H.; Janata, O.; Georgopoulos, A.

1999-01-01

Reconstructive surgery under septic conditions represents a major challenge in orthopaedics. Local application of antibiotics can provide high drug levels at the site of infection without systemic effects. However, removal of non-resorbable implants and filling of defects usually requires additional operative procedures. An ideal antibiotic carrier should provide for : 1) Effective bactericidal activity, especially against staphylococci including MRSA; 2) High and long lasting levels at the site of infection without local or systemic toxicity; 3) Repair of defects without a second stage procedure. Allogeneic cancellous bone is proven to be effective in restoration of bone stock. Vancomycin is effective against all gram-positive populations and the agent of choice for infections with MRSA. The aim of our study is to investigate the efficacy of a combination of both components in bone infection. Cancellous bone of human origin was processed during several steps and incubated in 10% vancomycin solution. The antimicrobial activity of the vancomycin graft composite (VGC) was evaluated using an agar diffusion bioassay against staphylococcus aureus and high performance liquid chromatography (HPLC). The testing period was up to 9 weeks. Elution of vancomycin from the graft was evaluated in 2.5% human albumin solution, which was exchanged every 24 hours. Concentration of vancomycin in allograft-bone was between 6.653[tg/g and 23.194gg/g with an average of 15.250 [tg/g, which is equivalent to 10.000 times the minimum inhibitory concentration (MIC) for s. aureus. The initial activity decreased to approx. 50% during the first week and approx. 30% at the end of the 9th week. The lowest values measured exceeded the MIC by 2000 times. Concentration in surrounding fluid decreased from 24.395,80 to 18,43pg/ml after 11 complete exchanges. Human cancellous bone, processed in an adequate way, offers capability to store high quantities of vancomycin. Vancomycin graft composites are

Depth profiling of extended defects in silicon by Rutherford backscattering measurements

International Nuclear Information System (INIS)

Gruska, B.; Goetz, G.

1981-01-01

Depth profiling of dislocations and stacking faults is carried out by analyzing axial and planar channeling data from As + -and P + -implanted silicon samples annealed at high temperatures. The analyzing procedure is based on the simple two-beam model. The results show that depth profiling of dislocations using planar channeling data is connected with a broadening of the real distributions. A degradation of the defect concentration and a deformation of the profile result for very high defect concentrations (> 5 x 10 5 cm/cm 2 ). All these effects can be neglected by analyzing axial channeling data. Depth profiling of stacking faults is restricted to the determination of the depth distribution of displaced atomic rows or planes. For both the procedures, axial as well as planar channeling measurements, the same depth profiles of displaced atomic rows are obtained. (author)

Highly Efficient Defect Emission from ZnO:Zn and ZnO:S Powders

Science.gov (United States)

Everitt, Henry

2013-03-01

Bulk Zinc Oxide (ZnO) is a wide band gap semiconductor with an ultraviolet direct band gap energy of 3.4 eV and a broad, defect-related visible wavelength emission band centered near 2 eV. We have shown that the external quantum efficiency can exceed 50% for this nearly white emission band that closely matches the human dark-adapted visual response. To explore the potential of ZnO as a rare earth-free white light phosphor, we investigated the mechanism of efficient defect emission in three types of ZnO powders: unannealed, annealed, and sulfur-doped. Annealing and sulfur-doping of ZnO greatly increase the strength of defect emission while suppressing the UV band edge emission. Continuous wave and ultrafast one- and two-photon excitation spectroscopy are used to examine the defect emission mechanism. Low temperature photoluminescence (PL) and PL excitation (PLE) spectra were measured for all three compounds, and it was found that bound excitons mediate the defect emission. Temperature-dependent PLE spectra for the defect and band edge emission were measured to estimate trapping and activation energies of the bound excitons and clarify the role they play in the defect emission. Time-resolved techniques were used to ascertain the role of exciton diffusion, the effects of reabsorption, and the spatial distributions of radiative and non-radiative traps. In unannealed ZnO we find that defect emission is suppressed and UV band edge emission is inefficient (reduced, and a high density of defects responsible for the broad visible emission are created near the surface. Interestingly, nearly identical PLE spectra are found for both the band edge and the defect emission, one of many indications that the defect emission is deeply connected to bound excitons. Quantum efficiency, also measured as a function of excitation wavelength, closely mirrors the PLE spectra for both emission bands. Sulfur-doped ZnO exhibits additional PLE and X-ray features indicative of a ZnS-rich surface

Gamma-induced defect production in ZrO2-Y2O3 crystals with different defectiveness

International Nuclear Information System (INIS)

Ashurov, M.Kh.; Amonov, M.Z.; Rakov, A.F.

2002-01-01

Full text: The defectiveness degree of ZrO 2 -Y 2 O 3 crystals depends on stabilizer concentration. The work is aimed at study gamma-induced defect production in crystals with different concentration of stabilizer and defects generated by neutron irradiation. Absorption spectra were measured with Specord M-40. It was found, that after gamma-irradiation of as-grown crystals up to some dose the intensity of absorption band at 420 nm reaches the maximum level of saturation. The dose of saturation depends of the concentration of stabilizer. It means that gamma-radiation does not produce any additional defects of structure. The oxygen vacancies existing in as-grown crystals are filled by the radiation induced electrons. Since the number of oxygen vacancies depends on the stabilizer concentration, then all these vacancies can be occupied by electrons at different gamma-doses. In crystals pre-irradiated with different neutron fluences followed by gamma-irradiation, the intensity of absorption bands at 420 and 530 nm increases in two stages. The gamma-dose of the second stage beginning decreases as the neutron fluence grows. The first stage of the absorption increase is due to developing of vacancies existing in as-grown crystals. The second stage is caused by generation of additional vacancies as the result of non-radiative exciton decay near the existing structure damages. The decrease of the gamma-dose, when the second stage of vacancy accumulation begins, results from the neutron induced structure damage degree

Effect of homologous impurities on primary radiation defect accumulation in alkali halides

International Nuclear Information System (INIS)

Chernov, S.A.; Gavrilov, V.V.

1981-01-01

To clarify the mechanism of the effect of anion and cation homologous impurities on the primary radiation-induced defect accumulation, the transient absorption of H and F centers was studied in KCl and KBr crystals. Pulse electron accelerator technique was used. Pure and doped crystals were investigated. It was obtained that the cation homologue Na in the concentration range from 0 to 0.5 m. % in 10 -8 -10 -6 s post-irradiation time has no effect on the defect accumulation efficiency at low temperature and increases the latter at high temperature. At large post-irradiation time and at high temperatures the rise of efficiency at low Na concentration and decrease of it at high Na concentrations were observed. The conclusion was made that Na does not affect the generation process. The anion homologous impurities (I and Br) lead to a significant increase of the accumulation efficiency due to the formation of more stable F-H pair at self-trapped exciton decay on anion impurities compared with that formed in perfect lattice. Some assumptions are advanced to explain the effect [ru

Bremsstrahlung-induced highly penetrating probes for nondestructive assay and defect analysis

CERN Document Server

Selim, F A; Harmon, J F; Kwofie, J; Spaulding, R; Erickson, G; Roney, T

2002-01-01

Nondestructive assay and defect analysis probes based on bremsstrahlung-induced processes have been developed to identify elements and probe defects in large volume samples. Bremsstrahlung beams from (electron accelerators) with end-point energies both above and below neutron emission threshold have been used. Below neutron emission threshold these beams (from 6 MeV small pulsed linacs), which exhibit high penetration, create positrons via pair production inside the material and produce X-ray fluorescence (XRF) radiation. Chemical assays of heavy elements in thick samples up to 10 g/cm sup 2 thick are provided by energy dispersive XRF measurements. The pair-produced positrons annihilate within the material, thereby emitting 511 keV gamma radiation. Doppler broadening spectroscopy of the 511 keV radiation can be performed to characterize the material and measure defects in samples of any desired thickness. This technique has successfully measured induced strain due to tensile stress in steel samples of 0.64 cm...

Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

Science.gov (United States)

Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

2017-09-01

It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

Predicting of bead undercut defects in high-speed gas metal arc welding (GMAW)

Institute of Scientific and Technical Information of China (English)

Wen-jing XU; Chuan-song WU; De-gang ZOU

2008-01-01

In the gas metal arc welding (GMAW) process, when the welding speed reaches a certain threshold, there will be an onset of weld bead undercut defects which limit the further increase of the welding speed. Establishing a mathematical model for high-speed GMAW to predict the tendency of bead undercuts is of great significance to pre-vent such defects. Under the action of various forces, the transferred metal from filler wire to the weld pool, and the geometry and dimension of the pool itself decide if the bead undercut occurs or not. The previous model simpli-fied the pool shape too much. In this paper, based on the actual weld pool geometry and dimension calculated from a numerical model, a hydrostatic model for liquid metal surface is used to study the onset of bead undercut defects in the high-speed welding process and the effects of dif-ferent welding parameters on the bead undercut tendency.

Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si

Science.gov (United States)

Gwozdz, K.; Stübner, R.; Kolkovsky, Vl.; Weber, J.

2017-07-01

We report on the electrical activation of neutral carbon-oxygen complexes in Si by wet-chemical etching at room temperature. Two deep levels, E65 and E75, are observed by deep level transient spectroscopy in n-type Czochralski Si. The activation enthalpies of E65 and E75 are obtained as EC-0.11 eV (E65) and EC-0.13 eV (E75). The electric field dependence of their emission rates relates both levels to single acceptor states. From the analysis of the depth profiles, we conclude that the levels belong to two different defects, which contain only one hydrogen atom. A configuration is proposed, where the CH1BC defect, with hydrogen in the bond-centered position between neighboring C and Si atoms, is disturbed by interstitial oxygen in the second nearest neighbor position to substitutional carbon. The significant reduction of the CH1BC concentration in samples with high oxygen concentrations limits the use of this defect for the determination of low concentrations of substitutional carbon in Si samples.

Study of radiation defects by in-situ measurements of the Hall effect in narrow-gap semiconductors

International Nuclear Information System (INIS)

Favre, J.

1990-01-01

Semiconducting compounds of II-VI, III-V and IV-VI groups were irradiated in liquid hydrogen by high energy (0.7 to 2.7 MeV) electrons. The Hall coefficient and resistivity variations were measured in situ during irradiation. The doping by irradiation induced defects is of p-type in III-V group compounds, while n-type doping occurs in II-VI and IV-VI group materials. A semiconductor to insulator or reverse transition was observed under irradiation when the chemical potential crossed the band edges. In IV-VI group compounds the two successive transitions take place in initially p-type samples. A metastable behaviour, characteristic to strong compensation, appears in the vicinity of those semiconductor - insulator transitions in IV-VI compounds. The slope of free carrier concentration vs. fluence variation was analyzed. It was compared to defect creation rates, calculated in the framework of a cascade model. The charge state of created defects was deduced in this way. - In IV-VI group compounds, the presence of localized levels degenerated with the conduction band and, in PbTe, of additional defect associated levels in the forbidden gap, was demonstrated. Those results are consistent with the saturation of electron concentration increase at high fluence as well as with the analysis of annealing experiments. - In Hg 1-x Cd x Te compounds, the analysis of electron concentration versus fluence increase indicates that only mercury Frenkel pairs are electrically active. The variation with cadmium content of the defect associated level energy was deduced from the saturation values of the electron concentration [fr

Interactions of structural defects with metallic impurities in multicrystalline silicon

International Nuclear Information System (INIS)

McHugo, S.A.; Thompson, A.C.; Hieslmair, H.

1997-01-01

Multicrystalline silicon is one of the most promising materials for terrestrial solar cells. It is critical to getter impurities from the material as well as inhibit contamination during growth and processing. Standard processing steps such as, phosphorus in-diffusion for p-n junction formation and aluminum sintering for backside ohmic contact fabrication, intrinsically possess gettering capabilities. These processes have been shown to improve L n values in regions of multicrystalline silicon with low structural defect densities but not in highly dislocated regions. Recent Deep Level Transient Spectroscopy (DLTS) results indirectly reveal higher concentrations of iron in highly dislocated regions while further work suggests that the release of impurities from structural defects, such as dislocations, is the rate limiting step for gettering in multicrystalline silicon. The work presented here directly demonstrates the relationship between metal impurities, structural defects and solar cell performance in multicrystalline silicon. Edge-defined Film-fed Growth (EFG) multicrystalline silicon in the as-grown state and after full solar cell processing was used in this study. Standard solar cell processing steps were carried out at ASE Americas Inc. Metal impurity concentrations and distributions were determined by use of the x-ray fluorescence microprobe (beamline 10.3.1) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The sample was at atmosphere so only elements with Z greater than silicon could be detected, which includes all metal impurities of interest. Structural defect densities were determined by preferential etching and surface analysis using a Scanning Electron Microscope (SEM) in secondary electron mode. Mapped areas were exactly relocated between the XRF and SEM to allow for direct comparison of impurity and structural defect distributions

Defect Chemistry of Oxides for Energy Applications.

Science.gov (United States)

Schweke, Danielle; Mordehovitz, Yuval; Halabi, Mahdi; Shelly, Lee; Hayun, Shmuel

2018-05-31

Oxides are widely used for energy applications, as solid electrolytes in various solid oxide fuel cell devices or as catalysts (often associated with noble metal particles) for numerous reactions involving oxidation or reduction. Defects are the major factors governing the efficiency of a given oxide for the above applications. In this paper, the common defects in oxide systems and external factors influencing the defect concentration and distribution are presented, with special emphasis on ceria (CeO 2 ) based materials. It is shown that the behavior of a variety of oxide systems with respect to properties relevant for energy applications (conductivity and catalytic activity) can be rationalized by general considerations about the type and concentration of defects in the specific system. A new method based on transmission electron microscopy (TEM), recently reported by the authors for mapping space charge defects and measuring space charge potentials, is shown to be of potential importance for understanding conductivity mechanisms in oxides. The influence of defects on gas-surface reactions is exemplified on the interaction of CO 2 and H 2 O with ceria, by correlating between the defect distribution in the material and its adsorption capacity or splitting efficiency. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

Energy Technology Data Exchange (ETDEWEB)

Zhang, Minghuan; Cai, Rongsheng; Zhang, Yujuan; Wang, Chao [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Chemistry and Chemical Engineering, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Wang, Yiqian, E-mail: yqwang@qdu.edu.cn [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Ross, Guy G.; Barba, David [INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

2014-07-01

Ge nanocrystals (Ge-ncs) were produced by implantation of {sup 74}Ge{sup +} into a SiO{sub 2} film on (100) Si, followed by high-temperature annealing from 700 °C to 1100 °C. Transmission electron microscopy (TEM) studies show that the average size of Ge-ncs increases with the annealing temperature. High-resolution TEM (HRTEM) investigations reveal the presence of planar and linear defects in the formed Ge-ncs, whose relative concentrations are determined at each annealing temperature. The relative concentration of planar defects is almost independent of the annealing temperature up to 1000 °C. However, from 1000 °C to 1100 °C, its concentration decreases dramatically. For the linear defects, their concentration varies considerably with the annealing temperatures. In addition, by measuring the interplanar spacing of Ge-ncs from the HRTEM images, a strong correlation is found between the dislocation percentage and the stress field intensity. Our results provide fundamental insights regarding both the presence of microstructural defects and the origin of the residual stress field within Ge-ncs, which can shed light on the fabrication of Ge-ncs with quantified crystallinity and appropriate size for the advanced Ge-nc devices. - Highlights: • Growth of Ge nanocrystals at different annealing temperatures was investigated. • Strain field has great effects on the formation of dislocations. • Different mechanisms are proposed to explain growth regimes of Ge nanocrystals.

Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

International Nuclear Information System (INIS)

Moll, M.; Fretwurst, E.; Lindstroem, G.

2000-01-01

We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2x10 14 to 9x10 17 cm -3 have been irradiated with fast neutrons up to a fluence of 2x10 15 cm -2 . Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10% of the initial doping concentration for [O i ]=9x10 17 cm -3 , while for normal detector grade material with [O i ] below 5x10 16 cm -3 that value is 60-90%. Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentration with an averaged introduction rate of (1.49±0.03)x10 -2 cm -1 . Only one material was found exhibiting a significantly smaller value of about 0.6x10 -2 cm -1 and thus indicating the possibility to suppress the radiation-induced acceptor creation by material modification. Finally, we show that the experimental findings disagree in several important aspects with predictions made by microscopic defect kinetics models, leaving the physical background of some of the measured data as an open question

High-flux solar concentration with imaging designs

Energy Technology Data Exchange (ETDEWEB)

Feuermann, D. [Ben-Gurion University of the Negev (Israel). Jacob Blaustein Institute for Desert Research; Gordon, J.M. [Ben-Gurion University of the Negev (Israel). Jacob Blaustein Institute for Desert Research; Ben-Gurion University of the Negev (Israel). Dept. of Mechanical Engineering; Ries, H. [Ries and Partners, Munich (Germany)

1999-02-01

Most large solar concentrators designed for high flux concentration at high collection efficiency are based on imaging primary mirrors and nonimaging secondary concentrators. In this paper, we offer an alternative purely imaging two-stage solar concentrator that can attain high flux concentration at high collection efficiency. Possible practical virtues include: (1) an inherent large gap between absorber and secondary mirror; (2) a restricted angular range on the absorber; and (3) an upward-facing receiver where collected energy can be extracted via the (shaded) apex of the parabola. We use efficiency-concentration plots to characterize the solar concentrators considered, and to evaluate the potential improvements with secondary concentrators. (author)

Defects in low temperature electron irradiated InP

International Nuclear Information System (INIS)

Suski, J.; Bourgoin, J.

1984-01-01

n and p-InP has been irradiated at 25K with 1MeV electrons and the created defects were studied by deep level transient spectroscopy (DLTS) in the range 25K-400K. In n-InP, four traps are directly observed, with low introduction rates except for one. They anneal in three stages, and four new centers of still lower concentration appear after 70 0 C heat treatment. In p-InP, two dominant traps stable up to approx.= 400K with introduction rates close to the theoretical ones, which might be primary defects are found, while another one is clearly a secondary defect likely associated to Zn dopant. At least two of the low concentration irradiation induced electron traps, created between 25K and 100K are also secondary defects, which implies a mobility of some primary defects down to 100K at least. (author)

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. III - Defect structure of undoped Hg0.6Cd0.4Te

Science.gov (United States)

Vydyanath, H. R.; Donovan, J. D.; Nelson, D. A.

1981-01-01

Hall effect measurements were carried out on undoped Hg0.6Cd0.4Te crystals quenched to room temperature subsequent to equilibration at temperatures varying from 450 to 720 C under various partial pressures of Hg. The variation of the hole concentration as a function of the partial pressure of Hg indicates that the native acceptor defects are doubly ionized. Native donor defects are found to be negligible in concentration and the p-type to n-type conversion is shown to be due to residual donors and not due to native donor defects. Thermodynamic constant for the incorporation of the doubly ionized native acceptor defect has been established.

Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

DEFF Research Database (Denmark)

Boturchuk, Ievgen; Scheffler, Leopold Julian; Larsen, Arne Nylandsted

2018-01-01

Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing...... to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects...

ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

Science.gov (United States)

Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

2016-05-01

At advanced technology nodes mask complexity has been increased because of large-scale use of resolution enhancement technologies (RET) which includes Optical Proximity Correction (OPC), Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO). The number of defects detected during inspection of such mask increased drastically and differentiation of critical and non-critical defects are more challenging, complex and time consuming. Because of significant defectivity of EUVL masks and non-availability of actinic inspection, it is important and also challenging to predict the criticality of defects for printability on wafer. This is one of the significant barriers for the adoption of EUVL for semiconductor manufacturing. Techniques to decide criticality of defects from images captured using non actinic inspection images is desired till actinic inspection is not available. High resolution inspection of photomask images detects many defects which are used for process and mask qualification. Repairing all defects is not practical and probably not required, however it's imperative to know which defects are severe enough to impact wafer before repair. Additionally, wafer printability check is always desired after repairing a defect. AIMSTM review is the industry standard for this, however doing AIMSTM review for all defects is expensive and very time consuming. Fast, accurate and an economical mechanism is desired which can predict defect printability on wafer accurately and quickly from images captured using high resolution inspection machine. Predicting defect printability from such images is challenging due to the fact that the high resolution images do not correlate with actual mask contours. The challenge is increased due to use of different optical condition during inspection other than actual scanner condition, and defects found in such images do not have correlation with actual impact on wafer. Our automated defect simulation tool predicts

Plasma folate levels and associated factors in women planning to become pregnant in a population with high prevalence of neural tube defects.

Science.gov (United States)

Ma, Rui; Wang, Linlin; Jin, Lei; Li, Zhiwen; Ren, Aiguo

2017-07-17

Optimal blood folate levels of women before pregnancy are critical to the prevention of neural tube defects (NTDs). However, few studies have focused on blood folate levels of women planning to become pregnant. The aims of this study were to assess plasma folate levels in women who planned to become pregnant in a population with high prevalence of NTDs, to identify factors associated with plasma folate levels, and to evaluate the risk of NTDs at the population level. A total of 2065 women were enrolled at the time of premarital health check-up in two rural counties in northern China from November 2009 to December 2012. Fasting venous blood samples were collected and plasma folate concentrations were measured by microbiological method. The overall median of plasma folate was 10.5 nmol/L. 50% of the women had a plasma folate level below 10.5 nmol/L, a cutoff for megaloblastic anemia, and 88% below 18 nmol/L, a proposed optimal plasma folate level for the prevention of NTDs. Folic acid supplementation was the only factor to be associated with plasma folate concentrations, but only 1.9% of the women reported having taken folic acid supplements. A population risk of 29.3 NTD cases per 10,000 births was predicted. Women who planned to become pregnant had very low plasma folate in the population. Folic acid supplementation was the only factor to be associated with a high plasma folate concentration. High NTD risk would remain if women would get pregnant without having taken folic acid supplements. Birth Defects Research 109:1039-1047, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Intrinsic point defects in inorganic perovskite CsPbI3 from first-principles prediction

KAUST Repository

Li, Yifan

2017-10-19

Cubic inorganic perovskite CsPbI3 is a direct bandgap semiconductor, which is promising for optoelectronic applications, such as solar cells, light emitting diodes, and lasers. The intrinsic defects in semiconductors play crucial roles in determining carrier conductivity, the efficiency of carrier recombination, and so on. However, the thermodynamic stability and intrinsic defect physics are still unclear for cubic CsPbI3. By using the first-principles calculations, we study the thermodynamic process and find out that the window for CsPbI3 growth is quite narrow and the concentration of Cs is important for cubic CsPbI3 growth. Under Pb-rich conditions, VPb and VI can pin the Fermi energy in the middle of the bandgap, which results in a low carrier concentration. Under Pb-poor conditions, VPb is the dominant defect and the material has a high concentration of hole carriers with a long lifetime. Our present work gives an insight view of the defect physics of cubic CsPbI3 and will be beneficial for optoelectronic applications based on cubic CsPbI3 and other analogous inorganic perovskites.

Intrinsic point defects in inorganic perovskite CsPbI3 from first-principles prediction

KAUST Repository

Li, Yifan; Zhang, Chenhui; Zhang, Xixiang; Huang, Dan; Shen, Qian; Cheng, Yingchun; Huang, Wei

2017-01-01

Cubic inorganic perovskite CsPbI3 is a direct bandgap semiconductor, which is promising for optoelectronic applications, such as solar cells, light emitting diodes, and lasers. The intrinsic defects in semiconductors play crucial roles in determining carrier conductivity, the efficiency of carrier recombination, and so on. However, the thermodynamic stability and intrinsic defect physics are still unclear for cubic CsPbI3. By using the first-principles calculations, we study the thermodynamic process and find out that the window for CsPbI3 growth is quite narrow and the concentration of Cs is important for cubic CsPbI3 growth. Under Pb-rich conditions, VPb and VI can pin the Fermi energy in the middle of the bandgap, which results in a low carrier concentration. Under Pb-poor conditions, VPb is the dominant defect and the material has a high concentration of hole carriers with a long lifetime. Our present work gives an insight view of the defect physics of cubic CsPbI3 and will be beneficial for optoelectronic applications based on cubic CsPbI3 and other analogous inorganic perovskites.

Nonlinear effects in defect production by atomic and molecular ion implantation

International Nuclear Information System (INIS)

David, C.; Dholakia, Manan; Chandra, Sharat; Nair, K. G. M.; Panigrahi, B. K.; Amirthapandian, S.; Amarendra, G.; Varghese Anto, C.; Santhana Raman, P.; Kennedy, John

2015-01-01

This report deals with studies concerning vacancy related defects created in silicon due to implantation of 200 keV per atom aluminium and its molecular ions up to a plurality of 4. The depth profiles of vacancy defects in samples in their as implanted condition are carried out by Doppler broadening spectroscopy using low energy positron beams. In contrast to studies in the literature reporting a progressive increase in damage with plurality, implantation of aluminium atomic and molecular ions up to Al 3 , resulted in production of similar concentration of vacancy defects. However, a drastic increase in vacancy defects is observed due to Al 4 implantation. The observed behavioural trend with respect to plurality has even translated to the number of vacancies locked in vacancy clusters, as determined through gold labelling experiments. The impact of aluminium atomic and molecular ions simulated using MD showed a monotonic increase in production of vacancy defects for cluster sizes up to 4. The trend in damage production with plurality has been explained on the basis of a defect evolution scheme in which for medium defect concentrations, there is a saturation of the as-implanted damage and an increase for higher defect concentrations

The low-temperature thermopower of Frenkel defects in aluminium

International Nuclear Information System (INIS)

Sieber, G.; Wehr, G.; Boening, K.

1977-01-01

The thermopower S has been measured in the temperature range 1.3 to 13 K (reference: superconductor) on aluminium containing Frenkel defects (FD), i.e. self-interstitials and vacancies of equal concentration c (maximum 850 PPM). The FD have been produced in varying concentration and configuration by reactor irradiation at 15 K ('isolated' FD) and subsequent annealing ('agglomerated' FD). A whole such cycle could be made on the same sample, and the measuring accuracy was very high. The theoretical law S = AT + BT 3 was always fulfilled below 8 K. The 'diffusion' coefficient A was shown to be qualitatively consistent with the Mott formula, determined only by the scattering anisotropy of various defect types (e.g. isolated or agglomerated FD), while the Al bandstructure was essentially unaffected by the defects. Applying the Nordheim-Gorter rule the specific coefficients of vacancies Asub(V) and interstitials Asub(I) were obtained. The 'phonon drag' coefficient B, however, was independent of the electron scattering anisotropy. This behaviour is unexpected from the Bailyn theory and obviously has to do with the exceptionally strong phonon scattering on the FD. (author)

Natural defects and defects created by ionic implantation in zinc tellurium

International Nuclear Information System (INIS)

Roche, J.P.; Dupuy, M.; Pfister, J.C.

1977-01-01

Various defects have been studied in ZnTe crystals by transmission electron microscope and by scanning electron microscope in cathodo-luminescence mode: grain boundaries, sub-grain boundaries, twins. Ionic implants of boron (100 keV - 2x10 14 and 10 15 ions cm -2 ) were made on these crystals followed by isochrone annealing (30 minutes) of zinc under partial pressure at 550, 650 and 750 0 C. The nature of the defects was determined by transmission electron microscope: these are interstitial loops (b=1/3 ) the size of which varies between 20 A (non-annealed sample) and 180A (annealed at 750 0 C). The transmission electron microscope was also used to make concentration profiles of defects depending on depth. It is found that for the same implant (2x10 14 ions.cm -2 ), the defect peak moves towards the exterior of the crystal as the annealing temperature rises (400 - 1000 and 7000 A for the three annealings). These results are explained from a model which allows for the coalescence of defects and considers the surface of the sample as being the principal source of vacancies. During the annealings, the migration of vacancies brings about the gradual annihilation of the implant defects. The adjustment of certain calculation parameters on the computer result in giving 2 eV as energy value for the formation of vacancies [fr

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

DEFF Research Database (Denmark)

Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

Donor-acceptor co-doped silicon carbide layers are promising light converters for novel monolithic all-semiconductor LEDs due to their broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides appropriate doping concentrations yielding low radiative...... lifetimes, high nonradiative lifetimes are crucial for efficient light conversion. Despite the excellent crystalline quality that can generally be obtained by sublimation epitaxy according to XRD measurements, the role of defects in f-SiC is not yet well understood. Recent results from room temperature...... photoluminescence, charge carrier lifetime measurements by microwave detected photoconductivity and internal quantum efficiency measurements suggest that the internal quantum efficiency of f-SiC layers is significantly affected by the incorporation of defects during epitaxy. Defect formation seems to be related...

Motion of Defect Clusters and Dislocations at a Crack Tip of Irradiated Material

International Nuclear Information System (INIS)

Moon, Won Jin; Kwon, Sang Chul; Kim, Whung Whoe

2007-01-01

Effects of defect clusters on mechanical properties of irradiated materials have not been clarified until now. Two radiation hardening models have been proposed. One is a dispersed barrier hardening mechanism based on the Orowan hardening model. This explains defect clusters as barriers to a dislocation motion. Generally the dislocation would rather shear or remove the defect clusters than make so-called Orowan loops. And the other is a cascade induced source hardening mechanism, which explains defect clusters as a Cottrell atmosphere for dislocation motions. However, the above mechanisms can not explain the microstructure of deformed material after irradiation and the phenomenon of yield softening. These mechanisms are based on an immobility of clusters. But we observed defect clusters could move into a specific crystallographic direction easily. Through 3 times of High Voltage Electron Microscope analysis, defect clusters have been observed to make one dimensional motion without applied external stress. If very small defect clusters could move under a stress gradient due to interactions between clusters, we can suggest that the clusters will move more actively when a stress gradient is applied externally. In-situ tensile test at TEM, we confirmed that kind of motion. We suggest defect clusters can move into crack tip, a stress-concentrated area due to tensile stress gradient and dislocations move out from the area by shear stress. Therefore radiation hardening can be explained agglomeration of defect clusters at stress concentrated area prohibits a generation of dislocation and make an increase of yield point

Ability of multiaxial fatigue criteria accounting for stress gradient effect for surface defective material

Directory of Open Access Journals (Sweden)

Niamchaona Wichian

2018-01-01

Full Text Available New high strength steels are widely used nowadays in many industrial areas as in automotive industry. These steels are more resistant and provide higher fatigue limits than latter ones but they are also more sensible to small defects. Natural defects that outcome from metallurgy (as shrinkage, inclusion, void are not considered in this study. We focus on small manufacturing defects such as cutting edge defects generated by punching or other surface defects due to stamping. These defects are harmful on the material fatigue behaviour due to high stress concentration at defects root. They also generate stress gradient that is beneficial from the fatigue strength point of view. This study focusses on the stress gradient (it does not account for the size effect from cylindrical defect on specimen edge. Practically a normal stress gradient is added in multiaxial fatigue criteria formulation. Both critical plane approach and integral approach are involved in the present study. This gradient is calculated from stress states at defects root by using FEM. Criteria fatigue function at N cycles is used to assess the material fatigue strength. Obviously multiaxial fatigue criteria accounting for stress gradient give more precise fatigue functions than criteria that do not consider the gradient influence.

Unexpected properties of the inductively coupled plasma induced defect in germanium

Energy Technology Data Exchange (ETDEWEB)

Coelho, S.M.M., E-mail: sergio@up.ac.za; Auret, F.D.; Janse van Rensburg, P.J.; Nel, J.M.

2014-04-15

Inductively coupled plasma (ICP) etching of germanium introduces a single defect, the E{sub 0.31} electron trap, for a large range of argon partial pressures from 4×10{sup –3} to 6.5×10{sup –4} mbar that correspond to ion energies of 8 to 60 eV. Ge of three crystallographic orientations, (1 0 0), (1 1 0) and (1 1 1), treated with 20 and 60 eV ICP had defect concentration profiles that were similar in appearance, with a maximum concentration of 10{sup 14} cm{sup −3} extending more than a µm into the material, approximately three orders of magnitude deeper than what TRIM simulations predicted. All profiles were measured using Laplace deep level transient spectroscopy (L-DLTS), a technique that is sensitive to defect concentrations as low as 10{sup 11} cm{sup −3}. Isochronal annealing of samples showed concentration curves broadening after a 400 K anneal and decreasing to the 10{sup 13} cm{sup −3} level after a 450 K anneal. Unannealed samples measured after a year exhibited similar decreases in defect concentration without broadening of their profiles. A 550 K anneal lowered the defect concentration to levels below the L-DLTS detection limit. Thereafter additional plasma treatment of the surface failed to reintroduce this defect indicating that the structure required for the formation of E{sub 0.31} was no longer present in the region under observation.

Hall effect measurements of Frenkel defect clustering in aluminium during high-dose reactor irradiation at 4.6 K

International Nuclear Information System (INIS)

Boening, K.; Mauer, W.; Pfaendner, K.; Rosner, P.

1976-01-01

The low-field Hall coefficient R 0 of irradiated aluminium at 4.6 K is independent of the Frenkel defect (FD) concentration, however sensitively dependent of their configuration. Since measurement of R 0 is not too difficult, rather extensive investigations of FD clustering during irradiation can be performed, but only qualitative interpretations are possible. Several pure Al samples have been irradiated with reactor neutrons at 4.6 K up to very high doses phit resp. resistivity increments Δrho 0 (maximum 91% of extrapolated saturation value Δrho 0 sup(sat) approximately 980 nΩcm). The main results are 1.FD clustering within a single displacement cascade is not a very strong effect in Al, since the R 0 values are essentially the same after reactor and after electron irradiation. Rough cascade averages are: volume Vsub(c) approximately 2.1 x 10 5 at.vol. and FD concentration csub(c) approximately 1100 ppm. 2. There is practically no dose-dependent FD clustering up to Δrho 0 approximately 350 nΩcm, since R 0 remains essentially constant there. It follows that dose-dependent FD clustering can only occur for high-order overlap of cascade volumes. The differential dose curve dΔrho 0 /dphit is perfectly linear in Δrho 0 as long as R 0 = const. 3. For Δrho 0 > 350 nΩcm FD clustering becomes increasingly important and R 0 changes strongly. Surprisingly dR 0 /dphit approximately const whence there is a constant rate of cluster size increase in spite of the vanishing rate of FD production, evidence of the continuous regrouping of the lattice and its defects. (author)

Defect engineering for 650 nm high-power AlGaInP laser diodes

International Nuclear Information System (INIS)

Kim, D.S.; Kim, K.C.; Shin, Y.C.; Kang, D.H.; Kim, B.J.; Kim, Y.M.; Park, Y.; Kim, T.G.

2006-01-01

To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 deg. C. The characteristic temperatures (T ) were 212 K for 25-60 deg. C and 106 K over 60 deg. C

Effect of d electrons on defect properties in equiatomic NiCoCr and NiCoFeCr concentrated solid solution alloys

Science.gov (United States)

Zhao, Shijun; Egami, Takeshi; Stocks, G. Malcolm; Zhang, Yanwen

2018-01-01

The role of d electrons in determining distributions of formation and migration energies for point defects in equiatomic NiCoCr and NiCoFeCr concentrated solid solution alloys (CSAs) are studied regarding electron density deformation flexibility based on first-principles calculations. The disordered state is taken into account by constructing special quasirandom structures. The migration barriers are determined by directly optimizing the saddle point. It is found that the formation energies of interstitials in CSAs are lower than those in pure Ni, whereas the formation energies of vacancies are higher. In both NiCoCr and NiCoFeCr, Co-related dumbbell interstitials exhibit lower formation energies. Notably, the distributions of migration energies for Cr interstitials and vacancies exhibit a remarkable overlap region. A detailed analysis of electronic properties reveals that the electronic charge deformation flexibility regarding eg to t2g transition has a dominant effect on defect energetics for different elements in CSAs. Thus the electron deformation ability is suggested as a key factor in understanding the peculiar defect behavior in CSAs.

Neutron scattering from a substitutional mass defect

International Nuclear Information System (INIS)

Williams, R.D.; Lovesey, S.W.

1985-06-01

The dynamic structure factor is calculated for a low concentration of light mass scatterers substituted in a cubic crystal matrix. A new numerical method for the exact calculation is demonstrated. A local density of states for the low momentum transfer limit, and the shifts and widths of the oscillator peaks in the high momentum transfer limit are derived. The limitations of an approximation which decouples the defect from the lattice is discussed. (author)

Defect-mediated magnetism of transition metal doped zinc oxide thin films

Science.gov (United States)

Roberts, Bradley Kirk

Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

Defect production in natural diamond irradiated with high energy Ni ions

International Nuclear Information System (INIS)

Varichenko, V.S.; Martinovich, V.A.; Penina, N.M.; Zajtsev, A.M.; Stel'makh, V.F.; Didyk, A.Yu.; Fahrner, W.R.

1995-01-01

Defect production in diamond irradiated by 335 MeV Ni ions within a dose range of 5 · 10 12 - 5 · 10 14 cm -2 has been studied by electron paramagnetic resonance (EPR) method. The irradiation leads to the appearance in diamond lattice of quasi-one-dimensional track like structures with non tetrahedral atomic configurations. Possible mechanism of microwave conductivity in the modified structures is discussed. Peculiarities of depth distribution profile of concentration of paramagnetic centres in modified structures are explained by track channeling and by stopped ions because of their elastic collisions with lattice atoms during ion stopping. (author). 24 refs., 4 figs., 1 tab

Defect phase diagram for doping of Ga2O3

Science.gov (United States)

Lany, Stephan

2018-04-01

For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2) conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

A Study on the Effects of Ball Defects on the Fatigue Life in Hybrid Bearings

Science.gov (United States)

Tang, Ching-Yao; Foerster, Chad E.; O'Brien, Michael J.; Hardy, Brian S.; Goyal, Vinay K.; Nelson, Benjamin A.; Robinson, Ernest Y.; Ward, Peter C.; Hilton, Michael R.

2014-01-01

Hybrid ball bearings using silicon nitride ceramic balls with steel rings are increasingly being used in space mechanism applications due to their high wear resistance and long rolling contact fatigue life. However, qualitative and quantitative reports of the effects of ball defects that cause early fatigue failure are rare. We report on our approach to study these effects. Our strategy includes characterization of defects encountered in use, generation of similar defects in a laboratory setting, execution of full-scale bearing tests to obtain lifetimes, post-test characterization, and related finite-element modeling to understand the stress concentration of these defects. We have confirmed that at least one type of defect of appropriate size can significantly reduce fatigue life. Our method can be used to evaluate other defects as they occur or are encountered.

Nucleation of voids and other irradiation-produced defect aggregates

International Nuclear Information System (INIS)

Wiedersich, H.; Katz, J.L.

1976-01-01

The nucleation of defect clusters in crystalline solids from radiation-produced defects is different from the usual nucleation processes in one important aspect: the condensing defects, interstitial atoms and vacancies, can mutually annihilate and are thus similar to matter and antimatter. The nucleation process is described as the simultaneous reaction of vacancies and interstitials (and gas atoms if present) with embryos of all sizes. The reaction rates for acquisition of point defects (and gas atoms) are calculated from their respective jump frequencies and concentrations in the supersaturated system. The reaction rates for emission of point defects are derived from the free energies of the defect clusters in the thermodynamic equilibrium system, i.e., the system without excess point defects. This procedure differs from that used in conventional nucleation theory and permits the inclusion of the ''antimatter'' defect into the set of reaction-rate equations in a straightforward manner. The method is applied to steady-state nucleation, during irradiation, of both dislocation loops and voids in the absence and in the presence of immobile and mobile gas. The predictions of the nucleation theory are shown to be in qualitative agreement with experimental observations, e.g., void densities increase with increasing displacement rates; gases such as helium enhance void nucleation; at low displacement rates and at high temperatures the presence of gas is essential to void formation. For quantitative predictions, the theory must be extended to include the termination of nucleation

Evaluation of surface energy state distribution and bulk defect concentration in DSSC photoanodes based on Sn, Fe, and Cu doped TiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Ekanayake, Piyaisiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research -A*STAR, 3 Research Link, 117602 (Singapore); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Locked Bag 4, Maroochydore DC, Queensland, 4558 (Australia); Hobley, Jonathan [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Chellappan, Vijila [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Gorelik, Sergey; Subramanian, Gomathy Sandhya [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Lim, Chee Ming [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam)

2015-10-01

Graphical abstract: - Highlights: • The structural, optical and optoelectronic properties of 1 mol.% Fe, Sn and Cu doped TiO{sub 2} have been compared. • Transient lifetimes for pure TiO{sub 2} and Sn doped TiO{sub 2} were considerably shorter than Fe and Cu doped TiO{sub 2}. • A good correlation between the bulk defects and transient decay for the doped TiO{sub 2} powders was observed. • Photon to current conversion efficiency of DSSC based on the metal doped TiO{sub 2} were in order Sn-TiO{sub 2} > Cu-TiO{sub 2} > Pure >> Fe-TiO{sub 2}. • DSSC based on Fe doped photoanodes is limited by a high concentration of surface free holes observed at 433 nm. - Abstract: Electron transfer dynamics in the oxide layers of the working electrodes in both dye-sensitized solar cells and photocatalysts greatly influences their performance. A proper understanding of the distribution of surface and bulk energy states on/in these oxide layers can provide insights into the associated electron transfer processes. Metal ions like Iron (Fe), Copper (Cu) and Tin (Sn) doped onto TiO{sub 2} have shown enhanced photoactivity in these processes. In this work, the structural, optical and transient properties of Fe, Cu and Sn doped TiO{sub 2} nanocrystalline powders have been investigated and compared using EDX, Raman spectroscopy, X-ray Photoelectron spectroscopy (XPS), and Transient Absorption spectroscopy (TAS). Surface free energy states distributions were probed using Electrochemical Impedance spectroscopy (EIS) on Dye Sensitized Solar Cells (DSSC) based on the doped TiO{sub 2} photoanodes. Raman and XPS Ti2p{sub 3/2} peak shifts and broadening showed that the concentration of defects were in the order: Cu doped TiO{sub 2} > Fe doped TiO{sub 2} > Sn doped TiO{sub 2} > pure TiO{sub 2}. Nanosecond laser flash photolysis of Fe and Cu doped TiO{sub 2} indicated slower transient decay kinetics than that of Sn doped TiO{sub 2} or pure TiO{sub 2}. A broad absorption peak and fast

Pullout Performances of Grouted Rockbolt Systems with Bond Defects

Science.gov (United States)

Xu, Chang; Li, Zihan; Wang, Shanyong; Wang, Shuren; Fu, Lei; Tang, Chunan

2018-03-01

This paper presents a numerical study on the pullout behaviour of fully grouted rockbolts with bond defects. The cohesive zone model (CZM) is adopted to model the bond-slip behaviour between the rockbolt and grout material. Tensile tests were also conducted to validate the numerical model. The results indicate that the defect length can obviously influence the load and stress distributions along the rockbolt as well as the load-displacement response of the grouted system. Moreover, a plateau in the stress distribution forms due to the bond defect. The linear limit and peak load of the load-displacement response decrease as the defect length increases. A bond defect located closer to the loaded end leads to a longer nonlinear stage in the load-displacement response. However, the peak loads measured from the specimens made with various defect locations are almost approximately the same. The peak load for a specimen with the defects equally spaced along the bolt is higher than that for a specimen with defects concentrated in a certain zone, even with the same total defect length. Therefore, the dispersed pattern of bond defects would be much safer than the concentrated pattern. For the specimen with dispersed defects, the peak load increases with an increase in the defect spacing, even if the total defect length is the same. The peak load for a grouted rockbolt system with defects increases with an increases in the bolt diameter. This work leads to a better understanding of the load transfer mechanism for grouted rockbolt systems with bond defects, and paves the way towards developing a general evaluation method for damaged rockbolt grouted systems.

Defect mediated magnetic interaction and high Tc ferromagnetism in Co doped ZnO nanoparticles.

Science.gov (United States)

Pal, Bappaditya; Giri, P K

2011-10-01

Structural, optical and magnetic studies have been carried out for the Co-doped ZnO nanoparticles (NPs). ZnO NPs are doped with 3% and 5% Co using ball milling and ferromagnetism (FM) is studied at room temperature and above. A high Curie temperature (Tc) has been observed from the Co doped ZnO NPs. X-ray diffraction and high resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption and photoluminescence studies on the doped samples show change in band structure and oxygen vacancy defects, respectively. Micro-Raman studies of doped samples shows defect related additional strong bands at 547 and 574 cm(-1) confirming the presence of oxygen vacancy defects in ZnO lattice. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear M-H loop with saturation magnetization and coercive field of the order of 4-6 emu/g and 260 G, respectively. Temperature dependence of magnetization measurement shows sharp ferromagnetic to paramagnetic transition with a high Tc = 791 K for 3% Co doped ZnO NPs. Ferromagnetic ordering is interpreted in terms of overlapping of polarons mediated through oxygen vacancy defects based on the bound magnetic polaron (BMP) model. We show that the observed FM data fits well with the BMP model involving localised carriers and magnetic cations.

Point defects in GaAs and other semiconductors

International Nuclear Information System (INIS)

Ehrhart, P.; Karsten, K.; Pillukat, A.

1993-01-01

In order to understand the properties of intrinsic point defects and their interactions at high defect concentrations GaAs wafers were irradiated at 4.5 K with 3 MeV electrons up to a dose of 4 · 10 19 e - /cm 2 . The irradiated samples were investigated by X-ray Diffraction and optical absorption spectroscopy. The defect production increases linearly with irradiation dose and characteristic differences are observed for the two sublattices. The Ga-Frenkel pairs are strongly correlated and are characterized by much larger lattice relaxations (V rel = 2--3 atomic volumes) as compared to the As-Frenkel pairs (V rel ∼1 at. vol.). The dominating annealing stage around 300 K is attributed to the mobility of the Ga interstitial atoms whereas the As-interstitial atoms can recombine with their vacancies only around 500 K. These results are compared to those for InP, ZnSe and Ge. Implications for the understanding of the damage after ion irradiation and implantation are discussed

Osteoinductivity of gelatin/β-tricalcium phosphate sponges loaded with different concentrations of mesenchymal stem cells and bone morphogenetic protein-2 in an equine bone defect model.

Science.gov (United States)

Seo, Jong-Pil; Tsuzuki, Nao; Haneda, Shingo; Yamada, Kazutaka; Furuoka, Hidefumi; Tabata, Yasuhiko; Sasaki, Naoki

2014-03-01

Fracture is one of the most life-threatening injuries in horses. Fracture repair is often associated with unsatisfactory outcomes and is associated with a high incidence of complications. This study aimed to evaluate the osteogenic effects of gelatin/β-tricalcium phosphate (GT) sponges loaded with different concentrations/ratios of mesenchymal stem cells (MSCs) and bone morphogenetic protein-2 (BMP-2) in an equine bone defect model. Seven thoroughbred horses were used in this study. Eight bone defects were created in the third metatarsal bones of each horse. Then, eight treatments, namely control, GT, GT/M-5, GT/M-6, GT/M-5/B-1, GT/M-5/B-3, GT/M-6/B-1, and GT/M-6/B-3 were applied to the eight different sites in a randomized manner (M-5: 2 × 10(5) MSCs; M-6: 2 × 10(6) MSCs; B-1: 1 μg of BMP-2; B-3: 3 μg of BMP-2). Repair of bone defects was assessed by radiography, quantitative computed tomography (QCT), and histopathological evaluation. Radiographic scores and CT values were significantly lower in the control group than in the other groups, while they were significantly higher in the GT/M-5/B-3 and GT/M-6/B-3 groups than in the other groups. The amount of mature compact bone filling the defects was greater in the GT/M-5/B-3 and GT/M-6/B-3 groups than in the other groups. The present study demonstrated that the GT sponge loaded with MSCs and BMP-2 promoted bone regeneration in an equine bone defect model. The GT/MSC/BMP-2 described here may be useful for treating horses with bone injuries.

Effect of high current density to defect generation of blue LED and its characterization with transmission electron microscope

Science.gov (United States)

Gunawan, R.; Sugiarti, E.; Isnaeni; Purawiardi, R. I.; Widodo, H.; Muslimin, A. N.; Yuliasari; Ronaldus, C. E.; Prastomo, N.; Hastuty, S.

2018-03-01

The optical, electrical and structural characteristics of InGaN-based blue light-emitting diodes (LEDs) were investigated to identify the degradation of LED before and after current injection. The sample was injected by high current of 200 A/cm2 for 5 and 20 minutes. It was observed that injection of current shifts light intensity and wavelength characteristics that indicated defect generation. Transmission Electron Microscopy (TEM) characterization was carried out in order to clarify the structure degradation caused by defect in active layer which consisted of 14 quantum well with thickness of about 5 nm and confined with barrier layer with thickness of about 12 nm. TEM results showed pre-existing defect in LED before injection with high current. Furthermore, discontinue and edge defect was found in dark spot region of LED after injection with high current.

Horizontally staggered lightguide solar concentrator with lateral displacement tracking for high concentration applications.

Science.gov (United States)

Ma, Hongcai; Wu, Lin

2015-07-10

We present the design of a horizontally staggered lightguide solar concentrator with lateral displacement tracking for high concentration applications. This solar concentrator consists of an array of telecentric primary concentrators, a horizontally staggered lightguide layer, and a vertically tapered lightguide layer. The primary concentrator is realized by two plano-aspheric lenses with lateral movement and maintains a high F-number over an angle range of ±23.5°. The results of the simulations show that the solar concentrator achieves a high concentration ratio of 500× with ±0.5° of acceptance angle by a single-axis tracker and dual lateral translation stages.

Initial stability of a highly porous titanium cup in an acetabular bone defect model.

Science.gov (United States)

Yoshimoto, Kensei; Nakashima, Yasuharu; Wakiyama, Miyo; Hara, Daisuke; Nakamura, Akihiro; Iwamoto, Mikio

2018-04-12

The purpose of this study was to quantify the initial stability of a highly porous titanium cup using an acetabular bone defect model. The maximum torque of a highly porous titanium cup, with a pore size of 640 μm and porosity of 60%, was measured using rotational and lever-out torque testing and compared to that of a titanium-sprayed cup. The bone models were prepared using a polyurethane foam block and had three levels of bone coverage: 100, 70, and 50%. The highly porous titanium cup demonstrated significantly higher maximum torque than the titanium-sprayed cups in the three levels of bone defects. On rotational torque testing, it was found to be 1.5, 1.3, and 1.3 times stronger than the titanium-sprayed cups with 100, 70 and 50% bone coverage, respectively. Furthermore, it was found to be 2.2, 2.3, and 1.5 times stronger on lever-out testing than the titanium-sprayed cup. No breakage in the porous layers was noted during the testing. This study provides additional evidence of the initial stability of highly porous titanium cup, even in the presence of acetabular bone defects. Copyright © 2018. Published by Elsevier B.V.

Assessment of local variability by high-throughput e-beam metrology for prediction of patterning defect probabilities

Science.gov (United States)

Wang, Fuming; Hunsche, Stefan; Anunciado, Roy; Corradi, Antonio; Tien, Hung Yu; Tang, Peng; Wei, Junwei; Wang, Yongjun; Fang, Wei; Wong, Patrick; van Oosten, Anton; van Ingen Schenau, Koen; Slachter, Bram

2018-03-01

We present an experimental study of pattern variability and defectivity, based on a large data set with more than 112 million SEM measurements from an HMI high-throughput e-beam tool. The test case is a 10nm node SRAM via array patterned with a DUV immersion LELE process, where we see a variation in mean size and litho sensitivities between different unique via patterns that leads to a seemingly qualitative differences in defectivity. The large available data volume enables further analysis to reliably distinguish global and local CDU variations, including a breakdown into local systematics and stochastics. A closer inspection of the tail end of the distributions and estimation of defect probabilities concludes that there is a common defect mechanism and defect threshold despite the observed differences of specific pattern characteristics. We expect that the analysis methodology can be applied for defect probability modeling as well as general process qualification in the future.

Defects of diamond single crystal grown under high temperature and high pressure

Energy Technology Data Exchange (ETDEWEB)

Su, Qingcai, E-mail: suqc@sdu.edu.cn [Key Laboratory of Liquid Structure and Heredity of Materials (Ministry of Education), Shandong University, Jinan, P. R. China, 250061 (China); School of Materials Science and Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Shandong Engineering Research Center for Superhard Materials, Zoucheng, P. R. China 273500 (China); Zhang, Jianhua [School of Mechanical Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Li, Musen [Key Laboratory of Liquid Structure and Heredity of Materials (Ministry of Education), Shandong University, Jinan, P. R. China, 250061 (China); School of Materials Science and Engineering, Shandong University, Jinan, P. R. China, 250061 (China); Shandong Engineering Research Center for Superhard Materials, Zoucheng, P. R. China 273500 (China)

2013-11-01

The diamond single crystal, synthesized with Fe–Ni–C–B system of catalyst under high temperature and high pressure, had been observed by field emission scanning electron microscope and transmission electron microscope. The presence of a cellular structure suggested that the diamond grew from melted catalyst solution and there existed a zone of component supercooling zone in front of the solid–liquid interface. The main impurities in the diamond crystal was (FeNi){sub 23}C{sub 6}. The triangle screw pit revealed on the (111) plane was generated by the screw dislocation meeting the diamond (111) plane at the points of emergence of dislocations. A narrow twin plane was formed between the two (111) plane. - Highlights: • High pressure, high temperature synthesis of diamond single crystal. • Fe–Ni–C–B used as catalyst, graphite as carbon source. • The main impurity in the diamond crystal was (FeNi){sub 23}C{sub 6}. • Surface defects arose from screw dislocations and stacking faults.

Cementification for radioactive waste including high-concentration sodium sulfate and high-concentration radioactive nuclide

International Nuclear Information System (INIS)

Miyamoto, Shinya; Sato, Tatsuaki; Sasoh, Michitaka; Sakurai, Jiro; Takada, Takao

2005-01-01

For the cementification of radioactive waste that has large concentrations of sodium sulfate and radioactive nuclide, a way of fixation for sulfate ion was studied comprising the pH control of water in contact with the cement solid, and the removal of the excess water from the cement matrix to prevent hydrogen gas generation with radiolysis. It was confirmed that the sulfate ion concentration in the contacted water with the cement solid is decreased with the formation of ettringite or barium sulfate before solidification, the pH value of the pore water in the cement solid can control less than 12.5 by the application of zeolite and a low-alkali cement such as alumina cement or fly ash mixed cement, and removal of the excess water from the cement matrix by heating is possible with aggregate addition. Consequently, radioactive waste including high-concentration sodium sulfate and high-concentration radioactive nuclide can be solidified with cementitious materials. (author)

A graphical automated detection system to locate hardwood log surface defects using high-resolution three-dimensional laser scan data

Science.gov (United States)

Liya Thomas; R. Edward. Thomas

2011-01-01

We have developed an automated defect detection system and a state-of-the-art Graphic User Interface (GUI) for hardwood logs. The algorithm identifies defects at least 0.5 inch high and at least 3 inches in diameter on barked hardwood log and stem surfaces. To summarize defect features and to build a knowledge base, hundreds of defects were measured, photographed, and...

A method to calculate equilibrium concentrations of gas and defects in the vicinity of an over-pressured bubble in UO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Noirot, L., E-mail: laurence.noirot@cea.fr

2014-04-01

We present a method devised to calculate the equilibrium concentration of point defects and gas atoms in the vicinity of a bubble in UO{sub 2}. First, we neglect the mechanical energy stored in the solid around an over-pressured bubble and then we explain how to take it into account. We apply the method to helium in interstitial positions in UO{sub 2}, and compare our theoretical value of Henry’s constant with experiments and a molecular dynamics computation. Then, we apply the method to xenon in a Schottky defect and use it to assess the realism of two scenarios elaborated to explain the “paradox of annealing experiments”, i.e. “why a large proportion of gas is released from grains in annealing experiments on irradiated fuel, even though there are thousands of intragranular bubbles to trap the gas?” These two scenarios (thermal resolution or blockage of trapping due to the stress field around the bubbles) were both found to be unrealistic, at least with the formation energies available from ab initio calculations, and with the assumption made to calculate the Z3 term of the partition function. This term is related to the vibration frequencies of xenon atoms in Schottky defects and lattice atoms close to defects.

Mechanical properties and fracture behaviour of defective phosphorene nanotubes under uniaxial tension

Science.gov (United States)

Liu, Ping; Pei, Qing-Xiang; Huang, Wei; Zhang, Yong-Wei

2017-12-01

The easy formation of vacancy defects and the asymmetry in the two sublayers of phosphorene nanotubes (PNTs) may result in brand new mechanical properties and failure behaviour. Herein, we investigate the mechanical properties and fracture behaviour of defective PNTs under uniaxial tension using molecular dynamics simulations. Our simulation results show that atomic vacancies cause local stress concentration and thus significantly reduce the fracture strength and fracture strain of PNTs. More specifically, a 1% defect concentration is able to reduce the fracture strength and fracture strain by as much as 50% and 66%, respectively. Interestingly, the reduction in the mechanical properties is found to depend on the defect location: a defect located in the outer sublayer has a stronger effect than one located in the inner layer, especially for PNTs with a small diameter. Temperature is also found to strongly influence the mechanical properties of both defect-free and defective PNTs. When the temperature is increased from 0 K to 400 K, the fracture strength and fracture strain of defective PNTs with a defect concentration of 1% are reduced further by 71% and 61%, respectively. These findings are of great importance for the structural design of PNTs as building blocks in nanodevices.

Effects of structure and defect on fatigue limit in high strength ductile irons

International Nuclear Information System (INIS)

Kim, Jin Hak; Kim, Min Gun

2000-01-01

In this paper, the influence of several factors such as hardness, internal defect and non-propagating crack on fatigue limits was investigated with three kinds of ductile iron specimens. From the experimental results the fatigue limits were examined in relation with hardness and tensile strength in case of high strength specimens under austempering treatment; in consequence the marked improvement of fatigue limits were not showed. The maximum defect size was an important factor to predict and to evaluate the fatigue limits of ductile irons. And, the quantitative relationship between the fatigue limits(σ ω ) and the maximum defect size(√area max ) was expressed as σ ω n · √area max =C 2 . Also, it was possible to explain the difference for the fatigue limits in three ductile irons by introduction of the non-propagating crack rates

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

Science.gov (United States)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

Molecular dynamics simulations of high energy cascade in ordered alloys: Defect production and subcascade division

Energy Technology Data Exchange (ETDEWEB)

Crocombette, Jean-Paul, E-mail: jpcrocombette@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, UPSay, F-91191 Gif-sur-Yvette (France); Van Brutzel, Laurent [CEA, DEN, Service de Corrosion et du Comportement des Matériaux dans leur Environnement, UPSay, F-91191 Gif-sur-Yvette (France); Simeone, David [CEA, DEN, Service de Recherches de Métallurgie Appliqué, Matériaux Fonctionnels pour l' Energie, CNRS-CEA-ECP, UPSay, F-91191 Gif-sur-Yvette (France); Luneville, Laurence [CEA, DEN, Service d' Etudes des Réacteurs et de Mathématiques Appliquées, Matériaux Fonctionnels pour l' Energie, CNRS-CEA-ECP, UPSay, F-91191 Gif-sur-Yvette (France)

2016-06-15

Displacement cascades have been calculated in two ordered alloys (Ni{sub 3}Al and UO{sub 2}) in the molecular dynamics framework using the CMDC (Cell Molecular Dynamics for Cascade) code (J.-P. Crocombette and T. Jourdan, Nucl. Instrum. Meth. B 352, 9 (2015)) for energies ranking between 0.1 and 580 keV. The defect production has been compared to the prediction of the NRT (Norgett, Robinson and Torrens) standard. One observes a decrease with energy of the number of defects compared to the NRT prediction at intermediate energies but, unlike what is commonly observed in elemental solids, the number of produced defects does not always turn to a linear variation with ballistic energy at high energies. The fragmentation of the cascade into subcascades has been studied through the analysis of surviving defect pockets. It appears that the common knowledge equivalence of linearity of defect production and subcascades division does not hold in general for alloys. We calculate the average number of subcascades and average number of defects per subcascades as a function of ballistic energy. We find an unexpected variety of behaviors for these two average quantities above the threshold for subcascade formation.

Molecular dynamics simulations of high energy cascade in ordered alloys: Defect production and subcascade division

International Nuclear Information System (INIS)

Crocombette, Jean-Paul; Van Brutzel, Laurent; Simeone, David; Luneville, Laurence

2016-01-01

Displacement cascades have been calculated in two ordered alloys (Ni_3Al and UO_2) in the molecular dynamics framework using the CMDC (Cell Molecular Dynamics for Cascade) code (J.-P. Crocombette and T. Jourdan, Nucl. Instrum. Meth. B 352, 9 (2015)) for energies ranking between 0.1 and 580 keV. The defect production has been compared to the prediction of the NRT (Norgett, Robinson and Torrens) standard. One observes a decrease with energy of the number of defects compared to the NRT prediction at intermediate energies but, unlike what is commonly observed in elemental solids, the number of produced defects does not always turn to a linear variation with ballistic energy at high energies. The fragmentation of the cascade into subcascades has been studied through the analysis of surviving defect pockets. It appears that the common knowledge equivalence of linearity of defect production and subcascades division does not hold in general for alloys. We calculate the average number of subcascades and average number of defects per subcascades as a function of ballistic energy. We find an unexpected variety of behaviors for these two average quantities above the threshold for subcascade formation.

Charge transfer of edge states in zigzag silicene nanoribbons with Stone–Wales defects from first-principles

Energy Technology Data Exchange (ETDEWEB)

Ting, Xie [College of Mathematics and Statistics, Chongqing University, Chongqing 401331 (China); School of Mathematics and Statistic, Chongqing University of Technology, Chongqing 400054 (China); Rui, Wang, E-mail: rcwang@cqu.edu.cn [Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044 (China); State Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Science, Beijing 100190 (China); Shaofeng, Wang [Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044 (China); Xiaozhi, Wu, E-mail: xiaozhiwu@cqu.edu.cn [Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044 (China)

2016-10-15

Highlights: • The properties of SW defects in silicene and ZSNRs are obtained. • The SW defects at the edge of ZSNRs induce a sizable gap. • The charge transfer of edge states is resulted from SW defects in ZSNRS. - Abstract: Stone–Wales (SW) defects are favorably existed in graphene-like materials with honeycomb lattice structure and potentially employed to change the electronic properties in band engineering. In this paper, we investigate structural and electronic properties of SW defects in silicene sheet and its nanoribbons as a function of their concentration using the methods of periodic boundary conditions with first-principles calculations. We first calculate the formation energy, structural properties, and electronic band structures of SW defects in silicene sheet, with dependence on the concentration of SW defects. Our results show a good agreement with available values from the previous first-principles calculations. The energetics, structural aspects, and electronic properties of SW defects with dependence on defect concentration and location in edge-hydrogenated zigzag silicene nanoribbons are obtained. For all calculated concentrations, the SW defects prefer to locate at the edge due to the lower formation energy. The SW defects at the center of silicene nanoribbons slightly influence on the electronic properties, whereas the SW defects at the edge of silicene nanoribbons split the degenerate edge states and induce a sizable gap, which depends on the concentration of defects. It is worth to find that the SW defects produce a perturbation repulsive potential, which leads the decomposed charge of edge states at the side with defect to transfer to the other side without defect.

Defect phase diagram for doping of Ga2O3

Directory of Open Access Journals (Sweden)

Stephan Lany

2018-04-01

Full Text Available For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn, a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T, O partial pressures (pO2, and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2 conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

Co- and defect-rich carbon nanofiber films as a highly efficient electrocatalyst for oxygen reduction

Science.gov (United States)

Kim, Il To; Song, Myeong Jun; Shin, Seoyoon; Shin, Moo Whan

2018-03-01

Many efforts are continuously devoted to developing high-efficiency, low-cost, and highly scalable oxygen reduction reaction (ORR) electrocatalysts to replace precious metal catalysts. Herein, we successfully synthesize Co- and defect-rich carbon nanofibers (CNFs) using an efficient heat treatment approach involving the pyrolysis of electrospun fibers at 370 °C under air. The heat treatment process produces Co-decorated CNFs with a high Co mass ratio, enriched pyridinic N, Co-pyridinic Nx clusters, and defect-rich carbon structures. The synergistic effects from composition and structural changes in the designed material increase the number of catalytically active sites for the ORR in an alkaline solution. The prepared Co- and defect-rich CNFs exhibit excellent ORR activities with a high ORR onset potential (0.954 V vs. RHE), a large reduction current density (4.426 mA cm-2 at 0.40 V), and a nearly four-electron pathway. The catalyst also exhibits a better long-term durability than commercial Pt/C catalysts. This study provides a novel hybrid material as an efficient ORR catalyst and important insight into the design strategy for CNF-based hybrid materials as electrochemical electrodes.

High electron mobility InN

International Nuclear Information System (INIS)

Jones, R. E.; Li, S. X.; Haller, E. E.; van Genuchten, H. C. M.; Yu, K. M.; Ager, J. W. III; Liliental-Weber, Z.; Walukiewicz, W.; Lu, H.; Schaff, W. J.

2007-01-01

Irradiation of InN films with 2 MeV He + ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility

Defect enhanced diffusion process and hydrogen delayed fracture in high strength steels

International Nuclear Information System (INIS)

Lung, C.W.; Mu Zaiqin.

1985-10-01

A defect enhanced diffusion model for hydrogen delayed fracture in high strength steels is suggested. It is shown that the rate of crack growth is dependent on the square or higher power of the stress intensity factor which is consistent with recent experiments. (author)

Influence of Dopants in ZnO Films on Defects

Science.gov (United States)

Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao

2008-12-01

The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

Mechanism of de-activation and clustering of B in Si at extremely high concentration

International Nuclear Information System (INIS)

Romano, L.; Piro, A.M.; Privitera, V.; Rimini, E.; Fortunato, G.; Svensson, B.G.; Foad, M.; Grimaldi, M.G.

2006-01-01

It is known that B deactivation and clustering occur in the presence of an excess of Si self-interstitials (Is). First principle calculations predicted the path of clusters growth, but the precursor complexes are too small to be visible even by the highest resolution microscopy. Channeling with nuclear reaction analyses allowed to detect the location of small B-Is complexes into the lattice formed as a consequence of the B interaction with the Is. In this work we extend this method to determine the complexes formed during the initial stage of B precipitation in Si doped at extremely high concentration (4 at%) and subjected to thermal treatment. The samples were prepared by excimer laser annealing (ELA) of Si implanted with 1 keV B. The thickness of the molten layer was 100 nm and the B profile was boxlike with a maximum hole concentration of ∼2 x 10 21 cm -3 . The electrical deactivation and carrier mobility of this metastable system has been studied as a function of subsequent annealing in the temperature range between 200 and 850 deg. C. Channeling analyses have been performed to investigate the B lattice location at the initial stage of precipitation. The difference, with respect to previous investigations, is the very small distance (<1 nm) between adjacent B atoms substitutional located in the lattice and the absence of Is that can be released during annealing, since the end of range defects were completely dissolved by ELA. In this way, information on the B complex evolution in a free-of-defects sample have been obtained

Features of accumulation of radiation defects in metal with impurity

International Nuclear Information System (INIS)

Iskakov, B.M.

2002-01-01

The processes of accumulation and annealing of radiation defects in solids are being studied for the last fifty years quite intensively. Many regularities of these processes are fixed, but there are more unsolved problems. The computer simulation is one of the effective tools in finding the mechanisms of accumulation and annealing of radiation defects in solids. The numerical solution of the system of the differential equations by means of computers describing kinetics of accumulation of radiation point defects in metals with impurity, has allowed to receive a number of new outcomes. It was revealed, that a determinative factor influential in concentration of point defects (vacancies and interstitial atoms), formed during an exposure of metal, is the correlation a speed of Frenkel twins recombination, the capture of defects by impurity atoms and absorption of defects by other drainage, for example by dislocations. If the speed of capture of interstitial atoms by impurity atoms for two - three order is lower than the recombination speed of Frenkel twins and on two - three order exceeds the speed of capture of vacancies by impurity atoms, the concentration of interstitial atoms within the first seconds of an exposure passes through a maximum, then quickly decreases in some times and after that starts slowly to grow. The change of concentration of interstitial atoms in an initial period of an exposure does not influence on the change of a vacancy concentration. Within the whole period of an exposure, during which the concentration of interstitial atoms achieves a maximum and then is reduced, the vacancy concentration is steadily enlarged. However subsequent sluggish rise of concentration of interstitial atoms during an exposure is followed by the decrease of the vacancy concentration. The most remarkable feature of the kinetics of accumulation of interstitial atoms in metals with impurity is the presence of two extremum on curve dependence of interstitial atoms on a

A study of defects in diamond

International Nuclear Information System (INIS)

Hunt, D.C.

1999-01-01

Defects, intrinsic and extrinsic, in natural and synthetic diamond, have been studied using Electron Paramagnetic Resonance (EPR) and optical absorption techniques. EPR measurements have been used in conjunction with infrared absorption to identify the defect-induced one-phonon infrared spectra produced by ionised single substitutional nitrogen, N s + . This N s + spectrum is characterised by a sharp peak at the Raman energy, 1332 cm -1 , accompanied by several broader resonances at 950(5), 1050(5), and 1095(5) cm -1 . Detailed concentration measurements show that a concentration of 5.5(5) ppm gives rise to an absorption of 1 cm -1 at 1332 cm -1 . The optical absorption band ND1, identified as the negative vacancy (V - ), is frequently used by diamond spectroscopists to measure the concentration of V - . Isoya has identified V - in the EPR spectra of irradiated diamond. The accuracy of EPR in determining concentrations, has been used to correlate the integrated absorption of the ND1 zero-phonon line to the concentration of V - centres. The parameter derived from this correlation is ∼16 times smaller than the previously accepted value obtained by indirect methods. A systematic study has been made - using EPR and optical absorption techniques - of synthetic type IIa diamonds, which have been irradiated with 2 MeV electrons in a specially developed dewar, allowing irradiation down to a measured sample temperature of 100K. Measurement of defect creation rates of the neutral vacancy and EPR defects, show a radical difference in the production rate of the EPR defect R2 between irradiation with the sample held at 100K and 350K. At 100K its production rate is 1.1(1) cm -1 , ∼10 times greater that at 350K. Observation of the di- -split interstitial (Ri) after irradiation at 100K proves the self-interstitial in diamond must be mobile at 100K, under the conditions of irradiation. Further study of the properties of the R2 defect (the most dominant EPR after electron

Defect trapping of deuterium implanted in aluminium

International Nuclear Information System (INIS)

Kido, Y.; Kakeno, M.; Yamada, K.; Hioki, T.; Kawamoto, J.

1982-01-01

The behaviour of deuterium implanted in Al was studied by the D( 3 He,p) 4 He and the D(d,p)T nuclear reactions. Changes of the depth profiles of the deuterium after heat treatments indicated that the implanted deuterium was trapped by the defect produced during the deuterium implantation and the release probability of the trapped deuterium increased as the specimen temperature was raised. Assuming a thermal equilibrium locally in the region of high defect concentration, the trapping energy of deuterium in Al was determined to be 0.12eV. Since the release probability for the single crystal was considerably larger than that for the polycrystal specimens, the deuterium was considered to be strongly trapped in the grain boundaries. Distributions of displaced Al atoms and the recovery of the lattice damage by annealing were measured by the channelling technique. (author)

Enhanced defects recombination in ion irradiated SiC

International Nuclear Information System (INIS)

Izzo, G.; Litrico, G.; Grassia, F.; Calcagno, L.; Foti, G.

2010-01-01

Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm 2 . Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S 0 , S x and S 2 ) show a recombination and simultaneously a new level (S 1 ) is formed. An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S 2 trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm 2 and increases at higher current density. The enhanced recombination of the S 2 trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron-hole recombination at the associated defect.

First-Principles Investigations of Defects in Minerals

Science.gov (United States)

Verma, Ashok K.

2011-07-01

The ideal crystal has an infinite 3-dimensional repetition of identical units which may be atoms or molecules. But real crystals are limited in size and they have disorder in stacking which as called defects. Basically three types of defects exist in solids: 1) point defects, 2) line defects, and 3) surface defects. Common point defects are vacant lattice sites, interstitial atoms and impurities and these are known to influence strongly many solid-state transport properties such as diffusion, electrical conduction, creep, etc. In thermal equilibrium point defects concentrations are determined by their formation enthalpies and their movement by their migration barriers. Line and surface defects are though absent from the ideal crystal in thermal equilibrium due to higher energy costs but they are invariably present in all real crystals. Line defects include edge-, screw- and mixed-dislocations and their presence is essential in explaining the mechanical strength and deformation of real crystals. Surface defects may arise at the boundary between two grains, or small crystals, within a larger crystal. A wide variety of grain boundaries can form in a polycrystal depending on factors such growth conditions and thermal treatment. In this talk we will present our first-principles density functional theory based defect studies of SiO2 polymorphs (stishovite, CaCl2-, α-PbO2-, and pyrite-type), Mg2SiO4 polymorphs (forsterite, wadsleyite and ringwoodite) and MgO [1-3]. Briefly, several native point defects including vacancies, interstitials, and their complexes were studied in silica polymorphs upto 200 GPa. Their values increase by a factor of 2 over the entire pressure range studied with large differences in some cases between different phases. The Schottky defects are energetically most favorable at zero pressure whereas O-Frenkel pairs become systematically more favorable at pressures higher than 20 GPa. The geometric and electronic structures of defects and migrating

Electron paramagnetic resonance of intrinsic point defects in GaAs following plastic deformation

International Nuclear Information System (INIS)

Benakki-Stiet, S.

1988-01-01

Defects generated in GaAs by a plastic deformation were studied to see if these defects, particularly anionic antisites associated with the deep donor EL2, were the same as those presented in the raw growth material, or the same as those which can be created in a high concentration by electron or neutron irradiation. Results show that there are different types of anionic antisites, so the subset associated with EL2 was identified. The apparent correlation between EL2 and dislocation density is discussed [fr

The defect-induced changes of the electronic and magnetic properties in the inverse Heusler alloy Ti{sub 2}CoAl

Energy Technology Data Exchange (ETDEWEB)

Chen, Ying, E-mail: ychenjz@163.com [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Wu, Bo [Department of Physics, Zunyi Normal College, Zunyi 563002 (China); Yuan, Hongkuan; Feng, Yu [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Chen, Hong, E-mail: chenh@swu.edu.cn [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)

2015-01-15

The first-principles calculations are performed to investigate the effect of swap, antisite and vacancy defects of three classes on the electronic and magnetic properties in the inverse Heusler alloy Ti{sub 2}CoAl of half-metallicity. Our calculations reveal that Ti(A/B)–Co and Co–Al swaps, Ti(A/B) and Al vacancy defects as well as Co{sub Ti(A)/Al} and Al{sub Ti(A)/Ti(B)} antisite defects are likely to form in a concentration as high as 12.5%. Among them, Co{sub Ti(A)} antisite is detected to be the most probable defect. It is shown that the spin polarizations of Ti{sub 2}CoAl are considerably reduced by the Ti(A/B)–Co swap and Ti(B)/Al vacancy defects, while a quite high spin polarization around 95% is observed in Co–Al swap as well as Ti(A) vacancy. Remarkably, all the likely antisite defects almost retain the half-metallic character in a concentration of 12.5% even if they have the possibility to form. However, induced by antisites, the Fermi levels shift to the edge of band gap with small peaks arising just above the Fermi level, which may destroy the half-metallicity by spin-flip excitation. - Graphical abstract: The spin polarization and formation energy of various possible defects in inverse Heusler alloy Ti{sub 2}CoAl. The triangle, star and square represent the swap, antisite and vacancy defects, respectively. - Highlights: • The swap, antisite, and vacancy defects are studied in half-metallic Ti{sub 2}CoAl. • The Co{sub Ti(A)} antisite is the most probable among the studied defects. • The antisite defects almost retain the half-metallicity. • Most of swap and vacancy defects have degraded the half-metallicity. • High spin polarizations are detected in Co–Al swap and Ti(A) vacancy defects.

Discovering a Defect that Imposes a Limit to Mg Doping in p-Type GaN

International Nuclear Information System (INIS)

Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; O'Keefe, M.A.

2006-01-01

Gallium nitride (GaN) is the III-V semiconductor used to produce blue light-emitting diodes (LEDs) and blue and ultraviolet solid-state lasers. To be useful in electronic devices, GaN must be doped with elements that function either as electron donors or as acceptors to turn it into either an n-type semiconductor or a p-type semiconductor. It has been found that GaN can easily be grown with n-conductivity, even up to large concentrations of donors--in the few 10 19 cm -3 range. However, p-doping, the doping of the structure with atoms that provide electron sinks or holes, is not well understood and remains extremely difficult. The only efficient p-type dopant is Mg, but it is found that the free hole concentration is limited to 2 x 10 18 cm -3 , even when Mg concentrations are pushed into the low 10 19 cm -3 range. This saturation effect could place a limit on further development of GaN based devices. Further increase of the Mg concentration, up to 1 x 10 20 cm -3 leads to a decrease of the free hole concentration and an increase in defects. While low- to medium-brightness GaN light-emitting diodes (LEDs) are remarkably tolerant of crystal defects, blue and UV GaN lasers are much less so. We used electron microscopy to investigate Mg doping in GaN. Our transmission electron microscopy (TEM) studies revealed the formation of different types of Mg-rich defects [1,2]. In particular, high-resolution TEM allowed us to characterize a completely new type of defect in Mg-rich GaN. We found that the type of defect depended strongly on crystal growth polarity. For crystals grown with N-polarity, planar defects are distributed at equal distances (20 unit cells of GaN); these defects can be described as inversion domains [1]. For growth with Ga-polarity, we found a different type of defect [2]. These defects turn out to be three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and their six walls formed on {1123} planes (Fig. 1a). In

Characterization of defects in Si and SiO2-Si using positrons

International Nuclear Information System (INIS)

Asoka-Kumar, P.; Lynn, K.G.

1993-01-01

Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed

Research Trends on Defect and Life Assessment of High Temperature Structure

International Nuclear Information System (INIS)

Lee, Hyeong Yeon; Lee Jae Han

2008-01-01

This report presents the analysis on the state-of-the-art research trends on defect assessment and life evaluation of high temperature structure based on the papers presented in the two international conferences of ASME PVP 2007 / CREEP 8 which was held in 2007 and ICFDSM VI(International Conference on Fatigue Damage of Structural Materials VI) which was held in 2006

Electrical studies of Fe-related defect complexes in silicon

Energy Technology Data Exchange (ETDEWEB)

Tang, Chi Kwong

2012-09-15

Iron (Fe) is an important impurity in solar-grade silicon which contributes substantially in degrading the efficiency of solar cells. The degradation is mainly caused by the Fe atoms situating at an unperturbed tetrahedral interstitial sites (Fei) in the silicon crystal, consequently acting as a recombination center. By altering the position and the neighbouring environment at which the Fe atoms reside, there are opportunities in minimizing or neutralizing the electrical activity of Fe. Furthermore, utilizing the high mobility of Fe, one can increase the performance of a device by accumulating the Fe atoms from critical regions into regions where Fe can be tolerated. These approaches can help in realizing high efficient solar cells based on cheap and highly Fe-contaminated silicon. In this work, we have investigated the interaction between Fe and defects relevant to solar cells, using mainly electrical characterization methods such as capacitance-voltage measurement, deep level transient spectroscopy and admittance spectroscopy. From the study of potential hydrogen passivation of Fe, hydrogen was introduced through wet chemical etching and further driven to a defined region. Using depth profiles, it is found that incorporation of hydrogen stimulates the dissociation of the iron-boron (Fe-B) pair, releasing and resulting in the unwanted Fei. At the same time, no passivation of Fe by hydrogen has been observed. On the investigation of the mechanism of phosphorus gettering of metal impurities, vacancies have been generated through proton-irradiation. The resulting irradiation-induced defects were examined for reactions with Fe after heat treatments. Based on the evolution of defect concentrations by isochronal annealings, it is found that Fe interacts with the divacancy and the vacancy-oxygen complexes, forming deep levels of 0.28 eV and 0.34 eV above the valence band edge (EV), respectively. In the search for substitutional Fe to investigate its electrical activity

Solution-diffusion with defects model for pressure-assisted forward osmosis

KAUST Repository

Duan, Jintang

2014-11-01

An osmosis transport model is presented that combines the standard internal and external concentration polarization equations in the forward osmosis (FO) field with the selective layer transport equations first proposed by Sherwood in 1967. The Sherwood model describes water flux as the sum of a solute-selective, diffusive component driven by the sum of osmotic pressure and hydraulic pressure differences, and a nonselective, convective component driven by hydraulic pressure difference only. This solution-diffusion with defects (SDWD) model and the solution-diffusion (SD) model were compared against data collected using polyamide thin-film-composite (PA-TFC) and integrally-skinned asymmetric cellulose triacetate (CTA) membranes, evaluated in various configurations. When tested with pure water on the porous support side and 1.5. M (π=72.7. bar) sodium chloride solution on the selective layer side, applying 1.25. bar of hydraulic pressure to the porous support side increased water flux by an order of magnitude for PA-TFC membranes, but had negligible effect on CTA membrane flux. These large flux variations can be explained by the SDWD model, but not the SD model. To confirm the existence of defects, a PA-TFC membrane was coated with a uniform, highly water-permeable, nonselective polymer. After coating to block convection through defects, the influence of hydraulic pressure on water flux through this membrane essentially disappeared. Water flux through these defects is low (<1% of total water flux for PA-TFC membranes) and of little consequence in practical FO or reverse osmosis (RO) applications. But in pressure-assisted forward osmosis (PAFO) or pressure-retarded osmosis (PRO), convective transport through defects affects the solute concentration difference across the membrane selective layer, increasing or decreasing water flux through defect-free regions. The presence of defects may explain why membrane power density in PRO is lower than that predicted based on

Diffuse scattering from crystals with point defects

International Nuclear Information System (INIS)

Andrushevsky, N.M.; Shchedrin, B.M.; Simonov, V.I.; Malakhova, L.F.

2002-01-01

The analytical expressions for calculating the intensities of X-ray diffuse scattering from a crystal of finite dimensions and monatomic substitutional, interstitial, or vacancy-type point defects have been derived. The method for the determination of the three-dimensional structure by experimental diffuse-scattering data from crystals with point defects having various concentrations is discussed and corresponding numerical algorithms are suggested

Bone Marrow Aspirate Concentrate for Cartilage Defects of the Knee: From Bench to Bedside Evidence.

Science.gov (United States)

Cotter, Eric J; Wang, Kevin C; Yanke, Adam B; Chubinskaya, Susan

2018-04-01

Objective To critically evaluate the current basic science, translational, and clinical data regarding bone marrow aspirate concentrate (BMAC) in the setting of focal cartilage defects of the knee and describe clinical indications and future research questions surrounding the clinical utility of BMAC for treatment of these lesions. Design A literature search was performed using the PubMed and Ovid MEDLINE databases for studies in English (1980-2017) using keywords, including ["bone marrow aspirate" and "cartilage"], ["mesenchymal stem cells" and "cartilage"], and ["bone marrow aspirate" and "mesenchymal stem cells" and "orthopedics"]. A total of 1832 articles were reviewed by 2 independent authors and additional literature found through scanning references of cited articles. Results BMAC has demonstrated promising results in the clinical application for repair of chondral defects as an adjuvant procedure or as an independent management technique. A subcomponent of BMAC, bone marrow derived-mesenchymal stem cells (MSCs) possess the ability to differentiate into cells important for osteogenesis and chondrogenesis. Modulation of paracrine signaling is perhaps the most important function of BM-MSCs in this setting. In an effort to increase the cellular yield, authors have shown the ability to expand BM-MSCs in culture while maintaining phenotype. Conclusions Translational studies have demonstrated good clinical efficacy of BMAC both concomitant with cartilage restoration procedures, at defined time points after surgery, and as isolated injections. Early clinical data suggests BMAC may help stimulate a more robust hyaline cartilage repair tissue response. Numerous questions remain regarding BMAC usage, including cell source, cell expansion, optimal pathology, and injection timing and quantity.

Mn fraction substitutional site and defects induced magnetism in Mn-implanted 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Bouziane, K., E-mail: Khalid.bouziane@uir.ac.ma [Pôle Energies Renouvelables et Etudes Pétrolières, Université Internationale de Rabat, 11000 – Salé el Jadida, Technopolis (Morocco); Al Azri, M.; Elzain, M. [Department of Physics, College of Science, Sultan Qaboos University, P.O. Box 36, Al-Khodh 123 (Oman); Chérif, S.M. [LSPM (CNRS-UPR 3407), Université Paris, 13-Nord, 99, Avenue Jean Baptiste Clément, 93430 Villetaneuse (France); Mamor, M. [Equipe MSISM, Faculté Poly-Disciplinaire, B.P. 4162 Safi, Université Cadi Ayyad, Marrakech (Morocco); Declémy, A. [Institut P’, CNRS – Université de Poitiers – ENSMA, UPR 3346, SP2MI – Téléport 2, 11 boulevard Marie et Pierre Curie, BP 30179, F-86962 Futuroscope Chasseneuil Cedex (France); Thomé, L. [CSNSM-Orsay, Bât. 108, Université d’Orsay, F-91405 Orsay (France)

2015-05-25

Highlights: • Shallow Mn-implanted 6H-SiC crystal. • Correlation between Mn-substitutional site concentration and magnetism. • Correlation between defects nature surrounding Mn site and magnetism. • Correlation of magnetism in Mn-doped SiC to Mn at Si sites and vacancy-related defect. - Abstract: n-type 6H-SiC (0 0 0 1) single crystal substrates were implanted with three fluences of manganese (Mn{sup +}) ions: 5 × 10{sup 15}, 1 × 10{sup 16} and 5 × 10{sup 16} cm{sup −2} with implantation energy of 80 keV at 365 °C to stimulate dynamic annealing. The samples were characterized using Rutherford backscattering channeling spectroscopy (RBS/C), high-resolution X-ray diffraction technique (HRXRD), and Superconducting Quantum Interference Device (SQUID) techniques. Two main defect regions have been identified using RBS/C spectra fitted with the McChasy code combined to SRIM simulations. Intermediate defects depth region is associated with vacancies (D{sub V}) and deeper defect (D{sub N}) essentially related to the Si and C interstitial defects. The defect concentration and the maximum perpendicular strain exhibit similar increasing trend with the Mn{sup +} fluence. Furthermore, the amount of Mn atoms at Si substitutional sites and the corresponding magnetic moment per Mn atom were found to increase with increasing Mn fluence from 0.7 μ{sub B} to 1.7 μ{sub B} and then collapsing to 0.2 μ{sub B}. Moreover, a strong correlation has been found between the magnetic moment and the combination of both large D{sub V}/D{sub N} ratio and high Mn at Si sites. These results are corroborated by our ab initio calculations considering the most stable configurations showing that besides the amount of Mn substituting Si sites, local vacancy-rich environment is playing a crucial role in enhancing the magnetism.

Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks

Science.gov (United States)

Coleman, P. G.; Burrows, C. P.; Mahapatra, R.; Wright, N. G.

2007-07-01

Open-volume (vacancy-type) point defects have been observed in ˜80-nm-thick titanium dioxide films grown on silicon dioxide/4H silicon carbide substrates as stacks with high dielectric constant for power device applications, using variable-energy positron annihilation spectroscopy. The concentration of vacancies decreases as the titanium dioxide growth temperature is increased in the range from 700to1000°C, whereas grain boundaries form in the polycrystalline material at the highest growth temperatures. It is proposed that the optimal electrical performance for films grown at 800°C reflects a balance between decreasing vacancy concentration and increasing grain boundary formation. The concentration of vacancies at the silicon dioxide/silicon carbide interface appears to saturate after 2.5h oxidation at 1150°C. A supplementary result suggests that the quality of the 10-μm-thick deposited silicon carbide epilayer is compromised at depths of about 2μm and beyond, possibly by the migration of impurities and/or other defects from the standard-grade highly doped 4H silicon carbide wafer beneath the epilayer during oxidation.

Point defects and diffusion in alloys: correlation effects

International Nuclear Information System (INIS)

Barbe, Vincent

2006-01-01

Kinetic models in alloys aim at predicting the transport properties of a system starting from the microscopic jump frequencies of defects. Such properties are of prior importance in systems which stay out of equilibrium for a long time, as for example irradiated alloys in nuclear reactors. We hereby propose several developments of the recent self-consistent mean field (SCMF) kinetic theory, which deals particularly with the correlation effects due to the coupling of atomic and defect fluxes. They are taken into account through a non-equilibrium distribution function of the system, which is derived from the time evolution of small clusters (of two or more atoms or defects). We therefore introduce a set of 'dynamic' interactions called effective Hamiltonian. The SCMF theory is extended to treat high jump frequency ratios for the vacancy mechanism, as well as the transport through interstitial defects. We use in both cases an atomic model which accounts for the thermodynamic properties of the alloy, as e.g. the short-range order. Those models are eventually applied to predict the diffusion properties in two model alloys of nuclear interest: the concentrated Fe-Ni-Cr solid solution and the dilute Fe(P) alloy. We present adapted atomic models and compare our predictions to experimental data. (author)

The effects of defects on copper melting under hydrostatic and shock loading

Energy Technology Data Exchange (ETDEWEB)

Luo, Shengnian [Los Alamos National Laboratory; An, Qi [Los Alamos National Laboratory; Germann, Timothy C [Los Alamos National Laboratory; Han, Li - Bo [USTC

2009-07-24

With molecular dynamics (MD) simulations, we investigate the effects of defects on Cu melting under hydrostatic and shock wave loading. We explore preexistent defects including vacancies, stacking faults and grain boundaries, as well as shock-induced defects. Depending on defect characteristics (energy and concentration), defects may have negligible or considerable effects on melting at MD scales However, it is expected that defects have more pronounced effects at heating rates lower than the MD rates.

High-dose irradiation induces cell cycle arrest, apoptosis, and developmental defects during Drosophila oogenesis.

Directory of Open Access Journals (Sweden)

Hee Jin Shim

Full Text Available Ionizing radiation (IR treatment induces a DNA damage response, including cell cycle arrest, DNA repair, and apoptosis in metazoan somatic cells. Because little has been reported in germline cells, we performed a temporal analysis of the DNA damage response utilizing Drosophila oogenesis as a model system. Oogenesis in the adult Drosophila female begins with the generation of 16-cell cyst by four mitotic divisions of a cystoblast derived from the germline stem cells. We found that high-dose irradiation induced S and G2 arrests in these mitotically dividing germline cells in a grp/Chk1- and mnk/Chk2-dependent manner. However, the upstream kinase mei-41, Drosophila ATR ortholog, was required for the S-phase checkpoint but not for the G2 arrest. As in somatic cells, mnk/Chk2 and dp53 were required for the major cell death observed in early oogenesis when oocyte selection and meiotic recombination occurs. Similar to the unscheduled DNA double-strand breaks (DSBs generated from defective repair during meiotic recombination, IR-induced DSBs produced developmental defects affecting the spherical morphology of meiotic chromosomes and dorsal-ventral patterning. Moreover, various morphological abnormalities in the ovary were detected after irradiation. Most of the IR-induced defects observed in oogenesis were reversible and were restored between 24 and 96 h after irradiation. These defects in oogenesis severely reduced daily egg production and the hatch rate of the embryos of irradiated female. In summary, irradiated germline cells induced DSBs, cell cycle arrest, apoptosis, and developmental defects resulting in reduction of egg production and defective embryogenesis.

Surface concentration of defects at grain boundaries in sintered alumina determined by positron annihilation lifetime spectroscopy

International Nuclear Information System (INIS)

Kansy, J.; Ahmad, A.Si.; Moya, G.; Liebault, J.

2001-01-01

Sintered alumina samples of grain diameters spanning from 1.2 to 4.5 μm have been investigated by positron annihilation lifetime spectroscopy. One series of samples was produced from material containing about 150 ppm impurities (mainly SiO 2 ). The second one was made from material having about 2700 ppm of various elements (SiO 2 , MgO, CaO). Two models of positron trapping at grain boundaries are compared: The first one relates to the diffusion-limited regime; and the other one - to the transmission-limited regime of trapping. As a results of relative change of surface concentration of defects at grain boundaries is determined. Additionally, positron diffusion constant in bulk alumina at room temperature, D + = 0.36 ± 10 cm 2 /s, is estimated. (author)

The defect chemistry of UO2 ± x from atomistic simulations

Science.gov (United States)

Cooper, M. W. D.; Murphy, S. T.; Andersson, D. A.

2018-06-01

Control of the defect chemistry in UO2 ± x is important for manipulating nuclear fuel properties and fuel performance. For example, the uranium vacancy concentration is critical for fission gas release and sintering, while all oxygen and uranium defects are known to strongly influence thermal conductivity. Here the point defect concentrations in thermal equilibrium are predicted using defect energies from density functional theory (DFT) and vibrational entropies calculated using empirical potentials. Electrons and holes have been treated in a similar fashion to other charged defects allowing for structural relaxation around the localized electronic defects. Predictions are made for the defect concentrations and non-stoichiometry of UO2 ± x as a function of oxygen partial pressure and temperature. If vibrational entropy is omitted, oxygen interstitials are predicted to be the dominant mechanism of excess oxygen accommodation over only a small temperature range (1265 K-1350 K), in contrast to experimental observation. Conversely, if vibrational entropy is included oxygen interstitials dominate from 1165 K to 1680 K (Busker potential) or from 1275 K to 1630 K (CRG potential). Below these temperature ranges, excess oxygen is predicted to be accommodated by uranium vacancies, while above them the system is hypo-stoichiometric with oxygen deficiency accommodated by oxygen vacancies. Our results are discussed in the context of oxygen clustering, formation of U4O9, and issues for fuel behavior. In particular, the variation of the uranium vacancy concentrations as a function of temperature and oxygen partial pressure will underpin future studies into fission gas diffusivity and broaden the understanding of UO2 ± x sintering.

Constitutional and thermal point defects in B2 NiAl

DEFF Research Database (Denmark)

Korzhavyi, P. A.; Ruban, Andrei; Lozovoi, A. Y.

2000-01-01

The formation energies of point defects and the interaction energies of various defect pairs in NiAl are calculated from first principles within an order N, locally self-consistent Green's-function method in conjunction with multipole electrostatic corrections to the atomic sphere approximation...... distance on their sublattice. The dominant thermal defects in Ni-rich and stoichiometric NiAl are calculated to be triple defects. In Al-rich alloys another type of thermal defect dominates, where two Ni vacancies are replaced by one antisite Al atom. As a result, the vacancy concentration decreases...

Defect characterization with positron annihilation

International Nuclear Information System (INIS)

Granatelli, L.; Lynn, K.G.

1980-01-01

Positron annihilation in metal crystals is reviewed. A brief introduction to the positron annihilation technique is presented first. Then the ability of the positron technique to perform microstructural characterization of four types of lattice defects (vacancies, voids, dislocations, grain boundaries) is discussed. It is frequently not possible to obtain samples that contain only one type of defect in nonnegligible concentrations. Such situations exist for some alloys and for fatigued metal samples. Finally, the current limitations and some future prospects of the technique are presented. 79 references, 14 figures, 1 table

Automatically high accurate and efficient photomask defects management solution for advanced lithography manufacture

Science.gov (United States)

Zhu, Jun; Chen, Lijun; Ma, Lantao; Li, Dejian; Jiang, Wei; Pan, Lihong; Shen, Huiting; Jia, Hongmin; Hsiang, Chingyun; Cheng, Guojie; Ling, Li; Chen, Shijie; Wang, Jun; Liao, Wenkui; Zhang, Gary

2014-04-01

Defect review is a time consuming job. Human error makes result inconsistent. The defects located on don't care area would not hurt the yield and no need to review them such as defects on dark area. However, critical area defects can impact yield dramatically and need more attention to review them such as defects on clear area. With decrease in integrated circuit dimensions, mask defects are always thousands detected during inspection even more. Traditional manual or simple classification approaches are unable to meet efficient and accuracy requirement. This paper focuses on automatic defect management and classification solution using image output of Lasertec inspection equipment and Anchor pattern centric image process technology. The number of mask defect found during an inspection is always in the range of thousands or even more. This system can handle large number defects with quick and accurate defect classification result. Our experiment includes Die to Die and Single Die modes. The classification accuracy can reach 87.4% and 93.3%. No critical or printable defects are missing in our test cases. The missing classification defects are 0.25% and 0.24% in Die to Die mode and Single Die mode. This kind of missing rate is encouraging and acceptable to apply on production line. The result can be output and reloaded back to inspection machine to have further review. This step helps users to validate some unsure defects with clear and magnification images when captured images can't provide enough information to make judgment. This system effectively reduces expensive inline defect review time. As a fully inline automated defect management solution, the system could be compatible with current inspection approach and integrated with optical simulation even scoring function and guide wafer level defect inspection.

Defect dynamics in Li substituted nanocrystalline ZnO: A spectroscopic analysis

Science.gov (United States)

Ghosh, S.; Nambissan, P. M. G.; Thapa, S.; Mandal, K.

2014-12-01

Very recently, vacancy-type defects have been found to play a major role in stabilizing d0 ferromagnetism in various low dimensional ZnO systems. In this context, the evolution of vacancy-type defects within the ZnO nanocrystals due to the doping of ZnO by alkali metal lithium (Li) is investigated using X-ray photoelectron (XPS), photoluminescence (PL) and positron annihilation spectroscopy (PAS). Li-doping is found to have significant effects in modifying the vacancy-type defects, especially the Zn vacancy (VZn) defects within the ZnO lattice. XPS measurement indicated that initially the Li1+ ions substitute at Zn2+ sites, but when Li concentration exceeds 7 at%, excess Li starts to move through the interstitial sites. The increase in positron lifetime components and the lineshape S-parameter obtained from coincident Doppler broadening spectra with Li-doping indicated an enhancement of VZn defect concentration within the doped ZnO lattice. The vacancy type defects, initially of the predominant configuration VZn+O+Zn got reduced to neutral ZnO divacancies due to the partial recombination by the doped Li1+ ions but, when the doping concentration exceeded 7 at% and Li1+ ions started migrating to the interstitials, positron diffusion is partly impeded and this results in reduced probability of annihilation. PL spectra have shown intense green and yellow-orange emission due to the stabilization of a large number of VZn defects and Li substitutional (LiZn) defects respectively. Hence Li can be a very useful dopant in stabilizing and modifying significant amount of Zn vacancy-defects which can play a useful role in determining the material behavior.

Defect dynamics in Li substituted nanocrystalline ZnO: A spectroscopic analysis

International Nuclear Information System (INIS)

Ghosh, S.; Nambissan, P.M.G.; Thapa, S.; Mandal, K.

2014-01-01

Very recently, vacancy-type defects have been found to play a major role in stabilizing d 0 ferromagnetism in various low dimensional ZnO systems. In this context, the evolution of vacancy-type defects within the ZnO nanocrystals due to the doping of ZnO by alkali metal lithium (Li) is investigated using X-ray photoelectron (XPS), photoluminescence (PL) and positron annihilation spectroscopy (PAS). Li-doping is found to have significant effects in modifying the vacancy-type defects, especially the Zn vacancy (V Zn ) defects within the ZnO lattice. XPS measurement indicated that initially the Li 1+ ions substitute at Zn 2+ sites, but when Li concentration exceeds 7 at%, excess Li starts to move through the interstitial sites. The increase in positron lifetime components and the lineshape S-parameter obtained from coincident Doppler broadening spectra with Li-doping indicated an enhancement of V Zn defect concentration within the doped ZnO lattice. The vacancy type defects, initially of the predominant configuration V Zn+O+Zn got reduced to neutral ZnO divacancies due to the partial recombination by the doped Li 1+ ions but, when the doping concentration exceeded 7 at% and Li 1+ ions started migrating to the interstitials, positron diffusion is partly impeded and this results in reduced probability of annihilation. PL spectra have shown intense green and yellow-orange emission due to the stabilization of a large number of V Zn defects and Li substitutional (Li Zn ) defects respectively. Hence Li can be a very useful dopant in stabilizing and modifying significant amount of Zn vacancy-defects which can play a useful role in determining the material behavior

Correlation between defect transition levels and thermoelectric operational temperature of doped CrSi2

Science.gov (United States)

Singh, Abhishek; Pandey, Tribhuwan

2014-03-01

The performance of a thermoelectric material is quantified by figure of merit ZT. The challenge in achieving high ZT value requires simultaneously high thermopower, high electrical conductivity and low thermal conductivity at optimal carrier concentration. So far doping is the most versatile approach used for modifying thermoelectric properties. Previous studies have shown that doping can significantly improve the thermoelectric performance, however the tuning the operating temperature of a thermoelectric device is a main issue. Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and temperature at which thermopower peaks. We show for doped CrSi2 that the peak of thermopower occurs at the temperature Tm, which corresponds to the position of defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed. The authors thankfully acknowledge support from ADA under NpMASS.

Interaction of alpha radiation with thermally-induced defects in silicon

International Nuclear Information System (INIS)

Ali, Akbar; Majid, Abdul

2008-01-01

The interaction of radiation-induced defects created by energetic alpha particles and thermally-induced defects in silicon has been studied using a Deep Level Transient Spectroscopy (DLTS) technique. Two thermally-induced defects at energy positions E c -0.48 eV and E c -0.25 eV and three radiation-induced defects E2, E3 and E5 have been observed. The concentration of both of the thermally-induced defects has been observed to increase on irradiation. It has been noted that production rates of the radiation-induced defects are suppressed in the presence of thermally-induced defects. A significant difference in annealing characteristics of thermally-induced defects in the presence of radiation-induced defects has been observed compared to the characteristics measured in pre-irradiated samples

Topological defects control collective dynamics in neural progenitor cell cultures

Science.gov (United States)

Kawaguchi, Kyogo; Kageyama, Ryoichiro; Sano, Masaki

2017-04-01

Cultured stem cells have become a standard platform not only for regenerative medicine and developmental biology but also for biophysical studies. Yet, the characterization of cultured stem cells at the level of morphology and of the macroscopic patterns resulting from cell-to-cell interactions remains largely qualitative. Here we report on the collective dynamics of cultured murine neural progenitor cells (NPCs), which are multipotent stem cells that give rise to cells in the central nervous system. At low densities, NPCs moved randomly in an amoeba-like fashion. However, NPCs at high density elongated and aligned their shapes with one another, gliding at relatively high velocities. Although the direction of motion of individual cells reversed stochastically along the axes of alignment, the cells were capable of forming an aligned pattern up to length scales similar to that of the migratory stream observed in the adult brain. The two-dimensional order of alignment within the culture showed a liquid-crystalline pattern containing interspersed topological defects with winding numbers of +1/2 and -1/2 (half-integer due to the nematic feature that arises from the head-tail symmetry of cell-to-cell interaction). We identified rapid cell accumulation at +1/2 defects and the formation of three-dimensional mounds. Imaging at the single-cell level around the defects allowed us to quantify the velocity field and the evolving cell density; cells not only concentrate at +1/2 defects, but also escape from -1/2 defects. We propose a generic mechanism for the instability in cell density around the defects that arises from the interplay between the anisotropic friction and the active force field.

Treatment of open tibial fracture with bone defect caused by high velocity missiles: A case report

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Golubović Zoran

2013-01-01

Full Text Available Introduction .Tibia fracture caused by high velocity missiles is mostly comminuted and followed by bone defect which makes their healing process extremely difficult and prone to numerous complications. Case Outline. A 34-year-old male was wounded at close range by a semi-automatic gun missile. He was wounded in the distal area of the left tibia and suffered a massive defect of the bone and soft tissue. After the primary treatment of the wound, the fracture was stabilized with an external fixator type Mitkovic, with convergent orientation of the pins. The wound in the medial region of the tibia was closed with the secondary stitch, whereas the wound in the lateral area was closed with the skin transplant after Thiersch. Due to massive bone defect in the area of the rifle-missile wound six months after injury, a medical team placed a reconstructive external skeletal fixator type Mitkovic and performed corticotomy in the proximal metaphyseal area of the tibia. By the method of bone transport (distractive osteogenesis, the bone defect of the tibia was replaced. After the fracture healing seven months from the secondary surgery, the fixator was removed and the patient was referred to physical therapy. Conclusion. Surgical treatment of wounds, external fixation, performing necessary debridement, adequate antibiotic treatment and soft and bone tissue reconstruction are essential in achieving good results in patients with the open tibial fracture with bone defect caused by high velocity missiles. Reconstruction of bone defect can be successfully treated by reconstructive external fixator Mitkovic. [Projekat Ministarstva nauke Republike Srbije, br. III 41017 i br. III 41004

A first principles study of native defects in alpha-quartz

CERN Document Server

Roma, G

2003-01-01

We present a study of several neutral and charged oxygen and silicon defects in alpha-quartz. We performed plane waves pseudopotential calculations in the framework of density functional theory in the local density approximation. We will show the structures that we obtained for vacancies and interstitials in several charge states and the corresponding formation energies. We discuss the reciprocal dependence of formation energies of charged defects (and thus concentrations) and the electron chemical potential on each other and we determine the latter by iterative self-consistent solution of the equation imposing charge neutrality. Results on defect concentrations, their dependence on oxygen partial pressure, and self-doping effects are presented.

Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa.

1994-01-01

Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author)

Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa

1994-11-01

Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author).

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Science.gov (United States)

Juda, U.; Scheerer, O.; Höhne, M.; Riemann, H.; Schilling, H.-J.; Donecker, J.; Gerhardt, A.

1996-09-01

A monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as from p-type silicon, in float zone (FZ) silicon as well as in Czochralski (Cz) silicon. Its concentration varies with the conditions of preparation and nearly reaches that of isolated substitutional platinum in Cz silicon annealed for 2 h at 540 °C after quenching from the temperature of platinum diffusion. Because of its concentration which in Cz-Si exceeds that in FZ-Si the defect is assumed to be oxygen-related though a hyperfine structure with 17O could not be resolved. The defect causes a level close to the valence band. This is concluded from variations of the Fermi level and from a discussion of the spin Hamiltonian parameters. In photo-EPR experiments the defect is coupled to recently detected acceptorlike self-interstitial related defects (SIRDs); their level position turns out to be near-midgap. These defects belong to the lifetime limiting defects in Pt-doped Si.

Highly effective SNP-based association mapping and management of recessive defects in livestock

DEFF Research Database (Denmark)

Charlier, Carole; Coppieters, Wouter; Rollin, Frédéric

2008-01-01

The widespread use of elite sires by means of artificial insemination in livestock breeding leads to the frequent emergence of recessive genetic defects, which cause significant economic and animal welfare concerns. Here we show that the availability of genome-wide, high-density SNP panels, combi...

Two-dimensional peridynamic simulation of the effect of defects on the mechanical behavior of Bi2Sr2CaCu2Ox round wires

International Nuclear Information System (INIS)

Le, Q V; Chan, W K; Schwartz, J

2014-01-01

Ag/AgX sheathed Bi 2 Sr 2 CaCu 2 O x (Bi2212) is the only superconducting round wire (RW) with high critical current density (J c ) at high magnetic (>25 T) and is thus a strong candidate for high field magnets for nuclear magnetic resonance and high energy physics. A significant remaining challenge, however, is the relatively poor electromechanical behavior of Bi2212 RW, yet there is little understanding of the relationships between the internal Bi2212 microstructure and the mechanical behavior. This is in part due to the complex microstructures within the Bi2212 filaments and the uncertain role of interfilamentary bridges. Here, two-dimensional peridynamic simulations are used to study the stress distribution of the Bi2212 RWs under an axial tensile load. The simulations use scanning electron micrographs obtained from high J c wires as a starting point to study the impact of various defects on the distribution of stress concentration within the Bi2212 microstructure and Ag. The flexibility of the peridynamic approach allows various defects, including those captured from SEM micrographs and artificially created defects, to be inserted into the microstructure for systematic study. Furthermore, this approach allows the mechanical properties of the defects to be varied, so the effects of porosity and both soft and hard secondary phases are evaluated. The results show significant stress concentration around defects, interfilamentary bridges and the rough Bi2212/Ag interface. In general, the stress concentration resulting from porosity is greater than that of solid-phase inclusions. A clear role of the defect geometry is observed. Results indicate that crack growth is likely to initiate at the Ag/Bi2212 interface or at voids, but that voids may also arrest crack growth in certain circumstances. These results are consistent with experimental studies of Bi2212 electromechanical behavior and magneto-optical imaging of crack growth. (paper)

Missing Linker Defects in a Homochiral Metal-Organic Framework: Tuning the Chiral Separation Capacity.

Science.gov (United States)

Slater, Benjamin; Wang, Zeru; Jiang, Shanxue; Hill, Matthew R; Ladewig, Bradley P

2017-12-20

Efficient chiral separation remains a very challenging task due to the identical physical and chemical properties of the enantiomers of a molecule. Enantiomers only behave differently from each other in the presence of other chiral species. Homochiral metal-organic frameworks (MOFs) have received much attention for their promising enantioseparation properties. However, there are still challenges to overcome in this field such as high enantiomeric separation. Structural defects play an important role in the properties of MOFs and can significantly change the pore architecture. In this work, we introduced missing linker defects into a homochiral metal-organic framework [Zn 2 (bdc)(l-lac)(dmf)] (ZnBLD; bdc = 1,4-benzenedicarboxylic acid, l-lac = l-lactic acid, dmf = N,N'-dimethylformamide) and observed an increase in enantiomeric excess for 1-phenylethanol of 35% with the defective frameworks. We adjusted the concentration of monocarboxylic acid ligand l-lactic acid by varying the ratio of Zn 2+ to ligand from 0.5 to 0.85 mmol. Additionally, a defective framework was synthesized with propanoic acid as modulator. In order to elucidate the correlation between defects and enantiomeric excess, five characterization techniques (FTIR, TGA, 1 H NMR, ICP, and PXRD) were employed. Full width at half-maximum analysis (fwhm) was performed on the powder X-ray diffraction traces and showed that the higher concentration of monocarboxylic acid MOFs were isostructural but suffered from increased fwhm values.

Are concentrations of alkaline earth elements in maternal hair associated with risk of neural tube defects?

Science.gov (United States)

Li, Zhenjiang; Wang, Bin; Huo, Wenhua; Liu, Yingying; Zhu, Yibing; Xie, Jing; Li, Zhiwen; Ren, Aiguo

2017-12-31

The relationship between maternal intake of alkaline earth elements (AEEs) during the period of neural tube closure and the risk of neural tube defects (NTDs) is still unclear. We propose that AEE deficiency during the early period of pregnancy is associated with an elevated risk of NTDs in the offspring. In this study, we recruited 191 women with NTD-affected pregnancies (cases) and 261 women who delivered healthy infants (controls). The concentrations of four AEEs (Ca, Mg, Sr, Ba) in maternal hair sections that grew during early pregnancy were analyzed. Information on the dietary habits of the mothers was also collected by questionnaire. Higher concentrations of the four AEEs in hair had protective effects against the risk of total NTDs, with odds ratios with 95% confidence interval (comparing groups separated by each median level) of 0.44 (0.28-0.68) for Mg, 0.56 (0.36-0.87) for Ca, 0.45 (0.28-0.70) for Sr, and 0.41 (0.26-0.65) for Ba. Significant negative dose-response trends were identified for the relationships between the four AEE concentrations in maternal hair and the risks of anencephaly and spina bifida, but not for encephalocele. The frequencies of maternal consumption of fresh green vegetables, fresh fruit, and meat or fish were positively correlated with the concentrations of AEEs in hair. We concluded that the maternal intake of AEEs may play an important role in preventing NTD formation in offspring, and that this intake is related to maternal dietary habits of consuming fresh green vegetables, fresh fruit, and fish or meat. Copyright © 2017 Elsevier B.V. All rights reserved.

Stress Concentration in the Bulk Cr2O3: Effects of Temperature and Point Defects

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Mazharul M. Islam

2017-01-01

Full Text Available Modeling the growth and failure of passive oxide films formed on stainless steels is of general interest for the use of stainless steel as structural material and of special interest in the context of life time extension of light water reactors in nuclear power plants. Using the DFT+U approach, a theoretical investigation on the resistance to failure of the chromium-rich inner oxide layer formed at the surface of chromium-containing austenitic alloys (stainless steel and nickel based alloys has been performed. The investigations were done for periodic bulk models. The data at the atomic scale were extrapolated by using the Universal Binding Energy Relationships (UBERs model in order to estimate the mechanical behavior of a 10 μm thick oxide scale. The calculated stress values are in good agreement with experiments. Tensile stress for the bulk chromia was observed. The effects of temperature and structural defects on cracking were investigated. The possibility of cracking intensifies at high temperature compared to 0 K investigations. Higher susceptibility to cracking was observed in presence of defects compared to nondefective oxide, in agreement with experimental observation.

Stress and Strain State Analysis of Defective Pipeline Portion

Science.gov (United States)

Burkov, P. V.; Burkova, S. P.; Knaub, S. A.

2015-09-01

The paper presents computer simulation results of the pipeline having defects in a welded joint. Autodesk Inventor software is used for simulation of the stress and strain state of the pipeline. Places of the possible failure and stress concentrators are predicted on the defective portion of the pipeline.

Substrate and coating defect planarization strategies for high-laser-fluence multilayer mirrors

International Nuclear Information System (INIS)

Stolz, Christopher J.; Wolfe, Justin E.; Mirkarimi, Paul B.; Folta, James A.; Adams, John J.; Menor, Marlon G.; Teslich, Nick E.; Soufli, Regina; Menoni, Carmen S.; Patel, Dinesh

2015-01-01

Planarizing or smoothing over nodular defects in multilayer mirrors can be accomplished by a discrete deposit-and-etch process that exploits the angle-dependent etching rate of optical materials. Typically, nodular defects limit the fluence on mirrors irradiated at 1064 nm with 10 ns pulse lengths due to geometrically- and interference-induced light intensification. Planarized hafina/silica multilayer mirrors have demonstrated > 125 J/cm 2 laser resistance for single-shot testing and 50 J/cm 2 for multi-shot testing for nodular defects originating on the substrate surface. Two planarization methods were explored: thick planarization layers on the substrate surface and planarized silica layers throughout the multilayer in which only the silica layers that are below one half of the incoming electric field value are etched. This paper also describes the impact of planarized defects that are buried within the multilayer structure compared to planarized substrate particulate defects. - Highlights: • Defect planarization significantly improves multilayer mirror laser resistance • Substrate and coating defects have both been effectively planarized • Single and multishot laser resistance improvement was demonstrated

Efficacy of highly hydrophilic soft contact lenses for persistent corneal epithelial defects after anterior segment surgery

Directory of Open Access Journals (Sweden)

Zhi-Wei Peng

2015-02-01

Full Text Available AIM:To investigate the efficacy of highly hydrophilic soft contact lenses for persistent corneal epithelial defects.METHODS:In this retrospective case analysis, 28 patients(28 eyeswith persistent corneal epithelial defects after anterior segment surgery from January 2011 to June 2013 in our hospital were reviewed. After regular treatment for at least 2wk, the persistent corneal epithelial defects were treated with highly hydrophilic soft contact lenses, until the corneal epithelial healing. Continued to wear the same lens no more than 3wk, or in need of replacement the new one. All cases were followed up for 6mo. Key indicators of corneal epithelial healling, corneal fluorescein staining and ocular symptoms improvement were observed.RESULTS: Twenty-one eyes were cured(75.00%, markedly effective in 5 eyes(17.86%, effective in 2 eyes(7.14%, no invalid cases, the total efficiency of 100.00%. Ocular symptoms of 25 cases(89.29%relieved within 2d, the rest 3 cases(10.71%relieved within 1wk. The corneal epithelial of 6 cases(21.43%repaired in 3wk, 13 cases(46.43%in 6wk, 7 cases(25.00%in 9wk, 2 cases(7.14%over 12wk. There were no signs of secondary infection. And no evidence of recurrence in 6mo. CONCLUSION: Highly hydrophilic soft contact lenses could repair persistent corneal epithelial defects after anterior segment surgery significantly, while quickly and effectively relieve a variety of ocular irritation.

Stacking Defects in Synthetic and Meteoritic Hibonites: Implications for High-Temperature Processes in the Solar Nebula

Science.gov (United States)

Han, J.; Keller, L. P.; Brearley, A. J.; Danielson, L. R.

2016-01-01

Hibonite (CaAl12O19) is a primary, highly refractory phase occurring in many Ca-Al-rich inclusions (CAIs) from different chondrite groups, except CI chondrites. Hibonite is predicted to be one of the earliest minerals to condense during cooling of the solar nebula at higher temperatures than any other major CAI mineral. Therefore, hibonite has great potential to reveal the processes and conditions of the very early, high-temperature stages of the solar nebular evolution. Previous microstructural studies of hibonite in CAIs and their Wark-Lovering (WL) rims showed the presence of numerous stacking defects in hibonite. These defects are interpreted as the modification of the stacking sequences of spinel and Ca-containing blocks within the ideal hexagonal hibonite structure, as shown by experimental studies of reaction-sintered ceramic CaO-Al2O3 compounds. We performed preliminary experiments in the CaO-Al2O3-MgO system to understand the formation processes and conditions of defect-structured hibonite found in meteorites.

Atomic-scale structure and properties of highly stable antiphase boundary defects in Fe3O4.

Science.gov (United States)

McKenna, Keith P; Hofer, Florian; Gilks, Daniel; Lazarov, Vlado K; Chen, Chunlin; Wang, Zhongchang; Ikuhara, Yuichi

2014-12-10

The complex and intriguing properties of the ferrimagnetic half metal magnetite (Fe 3 O 4 ) are of continuing fundamental interest as well as being important for practical applications in spintronics, magnetism, catalysis and medicine. There is considerable speculation concerning the role of the ubiquitous antiphase boundary (APB) defects in magnetite, however, direct information on their structure and properties has remained challenging to obtain. Here we combine predictive first principles modelling with high-resolution transmission electron microscopy to unambiguously determine the three-dimensional structure of APBs in magnetite. We demonstrate that APB defects on the {110} planes are unusually stable and induce antiferromagnetic coupling between adjacent domains providing an explanation for the magnetoresistance and reduced spin polarization often observed. We also demonstrate how the high stability of the {110} APB defects is connected to the existence of a metastable bulk phase of Fe 3 O 4 , which could be stabilized by strain in films or nanostructures.

Defect dynamics in Li substituted nanocrystalline ZnO: A spectroscopic analysis

Energy Technology Data Exchange (ETDEWEB)

Ghosh, S., E-mail: sghoshphysics@gmail.com [Department of Material Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata 700032 (India); Nambissan, P.M.G.; Thapa, S. [Applied Nuclear Physics Division, Saha Institute of Nuclear Physics, Sector 1, Block AF, Bidhannagar, Kolkata 700064 (India); Mandal, K. [Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700098 (India)

2014-12-01

Very recently, vacancy-type defects have been found to play a major role in stabilizing d{sup 0} ferromagnetism in various low dimensional ZnO systems. In this context, the evolution of vacancy-type defects within the ZnO nanocrystals due to the doping of ZnO by alkali metal lithium (Li) is investigated using X-ray photoelectron (XPS), photoluminescence (PL) and positron annihilation spectroscopy (PAS). Li-doping is found to have significant effects in modifying the vacancy-type defects, especially the Zn vacancy (V{sub Zn}) defects within the ZnO lattice. XPS measurement indicated that initially the Li{sup 1+} ions substitute at Zn{sup 2+} sites, but when Li concentration exceeds 7 at%, excess Li starts to move through the interstitial sites. The increase in positron lifetime components and the lineshape S-parameter obtained from coincident Doppler broadening spectra with Li-doping indicated an enhancement of V{sub Zn} defect concentration within the doped ZnO lattice. The vacancy type defects, initially of the predominant configuration V{sub Zn+O+Zn} got reduced to neutral ZnO divacancies due to the partial recombination by the doped Li{sup 1+} ions but, when the doping concentration exceeded 7 at% and Li{sup 1+} ions started migrating to the interstitials, positron diffusion is partly impeded and this results in reduced probability of annihilation. PL spectra have shown intense green and yellow-orange emission due to the stabilization of a large number of V{sub Zn} defects and Li substitutional (Li{sub Zn}) defects respectively. Hence Li can be a very useful dopant in stabilizing and modifying significant amount of Zn vacancy-defects which can play a useful role in determining the material behavior.

Characterization of high concentration dust generator

International Nuclear Information System (INIS)

Shimura, Toichiro; Yokochi, Akira

1999-01-01

This paper describes the development of fluidized bed type high concentration dust generator that keeps for long period dust concentration range of about 10 mg/m 3 for the study of working place monitoring system and evaluation of respirator. The generator is keeping constant powder in fluidized bed for keeping the dust concentration. It is necessary to keep constant feeding rate of powder in order to keep the quantity of dust in the fluidized bed. Our generator enables to obtain constant feeding rate by a screw feeder and by using mixed powder with fluidising particles (glass beads) before feeding. The generator produces high concentration dust of 11.3 mg/m 3 ± 1.0 mg/m 3 for about 5 hours and keeps the dust size 4.2-4.6 μm in mass median aerodynamic diameter with reasonable reproducibility. (author)

Defect networks and supersymmetric loop operators

Energy Technology Data Exchange (ETDEWEB)

Bullimore, Mathew [Perimeter Institute for Theoretical Physics, 31 Caroline Street North, Waterloo, ON N2L 2Y5 (Canada)

2015-02-10

We consider topological defect networks with junctions in A{sub N−1} Toda CFT and the connection to supersymmetric loop operators in N=2 theories of class S on a four-sphere. Correlation functions in the presence of topological defect networks are computed by exploiting the monodromy of conformal blocks, generalising the notion of a Verlinde operator. Concentrating on a class of topological defects in A{sub 2} Toda theory, we find that the Verlinde operators generate an algebra whose structure is determined by a set of generalised skein relations that encode the representation theory of a quantum group. In the second half of the paper, we explore the dictionary between topological defect networks and supersymmetric loop operators in the N=2{sup ∗} theory by comparing to exact localisation computations. In this context, the the generalised skein relations are related to the operator product expansion of loop operators.

Casting defects and mechanical properties of high pressure die cast Mg-Zn-Al-RE alloys

Energy Technology Data Exchange (ETDEWEB)

Xiao, Wenlong; Easton, Mark A.; Zhu, Suming; Nie, Jianfeng [CAST Cooperative Research Centre, Department of Materials Engineering Monash University, Melbourne, VIC (Australia); Dargusch, Matthew S. [School of Mechanical and Mining Engineering, University of Queensland, Brisbane, QLD (Australia); Gibson, Mark A. [CSIRO Process Science and Engineering, Melbourne, VIC (Australia); Jia, Shusheng [Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering Jilin University, Changchun (China)

2012-02-15

The die casting defects and tensile properties of high pressure die cast (HPDC) Mg-Zn-Al-RE alloys with various combinations of Zn and Al were studied. The results show that die casting defects in Mg-Zn-Al-RE alloys are affected by the percentage of Zn and Al contents. The hot tearing susceptibility (HTS) of Mg-Zn-Al-RE alloys tends to increase with increasing Zn content up to 6 wt%, while a further increase of Al and/or Zn content reduces the HTS. In tensile tests, the yield strength (YS) is generally improved by increasing Zn or Al content, whereas the tensile strength (TS) and ductility appear to depend largely on the presence of casting defects. Compared with Mg-Zn-Al alloys, the mechanical properties of the Mg-Zn-Al-RE alloy are significantly improved. The Mg-4Zn-4Al-4RE alloy is found to have few casting defects and the optimal tensile properties. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Physicochemical characterization of point defects in fluorine doped tin oxide films

Science.gov (United States)

Akkad, Fikry El; Joseph, Sudeep

2012-07-01

The physical and chemical properties of spray deposited FTO films are studied using FESEM, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), electrical and optical measurements. The results of XRD measurements showed that the films are polycrystalline (grain size 20-50 nm) with Rutile structure and mixed preferred orientation along the (200) and (110) planes. An angular shift of the XRD peaks after F-doping is observed and interpreted as being due to the formation of substitutional fluorine defects (FO) in presence of high concentration of oxygen vacancies (VO) that are electrically neutral. The electrical neutrality of oxygen vacancies is supported by the observation that the electron concentration n is two orders of magnitude lower than the VO concentration calculated from chemical analyses using XPS measurements. It is shown that an agreement between XPS, XRD, and Hall effect results is possible provided that the degree of deviation from stoichiometry is calculated with the assumption that the major part of the bulk carbon content is involved in O-C bonds. High temperature thermal annealing is found to cause an increase in the FO concentration and a decrease in both n and VO concentrations with the increase of the annealing temperature. These results could be interpreted in terms of a high temperature chemical exchange reaction between the SnO2 matrix and a precipitated fluoride phase. In this reaction, fluorine is released to the matrix and Sn is trapped by the fluoride phase, thus creating substitutional fluorine FO and tin vacancy VSn defects. The enthalpy of this reaction is determined to be approximately 2.4 eV while the energy of formation of a VSn through the migration of SnSn host atom to the fluoride phase is approximately 0.45 eV.

Minimally Manipulated Bone Marrow Concentrate Compared with Microfracture Treatment of Full-Thickness Chondral Defects: A One-Year Study in an Equine Model.

Science.gov (United States)

Chu, Constance R; Fortier, Lisa A; Williams, Ashley; Payne, Karin A; McCarrel, Taralyn M; Bowers, Megan E; Jaramillo, Diego

2018-01-17

Microfracture is commonly performed for cartilage repair but usually results in fibrocartilage. Microfracture augmented by autologous bone marrow concentrate (BMC) was previously shown to yield structurally superior cartilage repairs in an equine model compared with microfracture alone. The current study was performed to test the hypothesis that autologous BMC without concomitant microfracture improves cartilage repair compared with microfracture alone. Autologous sternal bone marrow aspirate (BMA) was concentrated using a commercial system. Cells from BMC were evaluated for chondrogenic potential in vitro and in vivo. Bilateral full-thickness chondral defects (15-mm diameter) were created on the midlateral trochlear ridge in 8 horses. Paired defects were randomly assigned to treatment with BMC without concomitant microfracture, or to microfracture alone. The repairs were evaluated at 1 year by in vitro assessment, arthroscopy, morphological magnetic resonance imaging (MRI), quantitative T2-weighted and ultrashort echo time enhanced T2* (UTE-T2*) MRI mapping, and histological assessment. Culture-expanded but not freshly isolated cells from BMA and BMC underwent cartilage differentiation in vitro. In vivo, cartilage repairs in both groups were fibrous to fibrocartilaginous at 1 year of follow-up, with no differences observed between BMC and microfracture by arthroscopy, T2 and UTE-T2* MRI values, and histological assessment (p > 0.05). Morphological MRI showed subchondral bone changes not observed by arthroscopy and improved overall outcomes for the BMC repairs (p = 0.03). Differences in repair tissue UTE-T2* texture features were observed between the treatment groups (p BMC was applied directly to critical-sized, full-thickness chondral defects in an equine model, the cartilage repair results were similar to those of microfracture. Our data suggest that, given the few mesenchymal stem cells in minimally manipulated BMC, other mechanisms such as paracrine, anti

Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3-δ thin films investigated by chemical capacitance measurements.

Science.gov (United States)

Schmid, Alexander; Rupp, Ghislain M; Fleig, Jürgen

2018-05-03

La0.6Sr0.4FeO3-δ (LSF) thin films of different thickness were prepared by pulsed laser deposition on yttria stabilized zirconia (YSZ) and characterized by using three electrode impedance spectroscopy. Electrochemical film capacitance was analyzed in relation to oxygen partial pressure (0.25 mbar to 1 bar), DC polarization (0 m to -600 m) and temperature (500 to 650 °C). For most measurement parameters, the chemical bulk capacitance dominates the overall capacitive properties and the corresponding defect chemical state depends solely on the oxygen chemical potential inside the film, independent of atmospheric oxygen pressure and DC polarization. Thus, defect chemical properties (defect concentrations and defect formation enthalpies) could be deduced from such measurements. Comparison with LSF defect chemical bulk data from the literature showed good agreement for vacancy formation energies but suggested larger electronic defect concentrations in the films. From thickness-dependent measurements at lower oxygen chemical potentials, an additional capacitive contribution could be identified and attributed to the LSF|YSZ interface. Deviations from simple chemical capacitance models at high pressures are most probably due to defect interactions.

Primary defect production by high energy displacement cascades in molybdenum

Energy Technology Data Exchange (ETDEWEB)

Selby, Aaron P. [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Xu, Donghua, E-mail: xudh@utk.edu [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Juslin, Niklas; Capps, Nathan A. [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Wirth, Brian D. [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Oak Ridge National Laboratory, P.O. Box 2008, MS6003, Oak Ridge, TN 37831 (United States)

2013-06-15

We report molecular dynamics simulations of primary damage in molybdenum produced by high energy displacement cascades on the femto- to pico-second and Angstrom to nanometer scales. Clustering directly occurred for both interstitials and vacancies in the 1–50 keV cascade energy range explored. Point defect survival efficiency and partitioning probabilities into different sized clusters were quantified. The results will provide an important reference for kinetic models to describe the microstructural evolution in Mo under ion or neutron irradiations over much longer time and length scales.

The effect of C concentration on radiation damage in Fe–Cr–C alloys

Energy Technology Data Exchange (ETDEWEB)

Meinander, A., E-mail: andrea.meinander@helsinki.fi [EURATOM-Tekes, Department of Physics, P.O. Box 43, FI-00014 University of Helsinki (Finland); Henriksson, K.O.E. [EURATOM-Tekes, Department of Physics, P.O. Box 43, FI-00014 University of Helsinki (Finland); Björkas, C. [EURATOM-Tekes, Department of Physics, P.O. Box 43, FI-00014 University of Helsinki (Finland); Institute of Energy and Climate Research – Plasma Physics, Forschungszentrum Jülich GmbH, Association EURATOM-FZJ, Partner in the Trilateral Euregio Cluster, Jülich (Germany); Vörtler, K.; Nordlund, K. [EURATOM-Tekes, Department of Physics, P.O. Box 43, FI-00014 University of Helsinki (Finland)

2013-11-15

Using a recently developed analytical bond-order potential for the complete ternary system, we performed molecular dynamics simulations of the primary radiation damage by displacement cascades in different Fe–Cr–C model alloys. We compared results obtained with this new potential to previous studies employing potentials for the binary Fe–Cr and Fe–C systems. We analysed the effect of C concentration on the number of Frenkel pairs produced by the cascades, as well as on clustering of vacancies and self-interstitial atoms (SIAs), and on the Cr and C content in the defects. The effect of C concentration on defect production was negligible, except at very high concentrations of over 1 at.% C. The main effect was in the Cr content of clustered SIAs, which increased with increasing C concentration.

Casting defects and high temperature fatigue life of IN 713LC superalloy

Czech Academy of Sciences Publication Activity Database

Kunz, Ludvík; Lukáš, Petr; Konečná, R.; Fintová, S.

2012-01-01

Roč. 41, AUG (2012), s. 47-51 ISSN 0142-1123 R&D Projects: GA MPO(CZ) FR-TI3/055; GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68081723 Keywords : IN 713LC * High-cycle fatigue * casting defects * hot isostatic pressing * extreme value statistics Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 1.976, year: 2012

Anisotropic diffusion of point defects in a two-dimensional crystal of streptavidin observed by high-speed atomic force microscopy

International Nuclear Information System (INIS)

Yamamoto, Daisuke; Uchihashi, Takayuki; Kodera, Noriyuki; Ando, Toshio

2008-01-01

The diffusion of individual point defects in a two-dimensional streptavidin crystal formed on biotin-containing supported lipid bilayers was observed by high-speed atomic force microscopy. The two-dimensional diffusion of monovacancy defects exhibited anisotropy correlated with the two crystallographic axes in the orthorhombic C 222 crystal; in the 2D plane, one axis (the a-axis) is comprised of contiguous biotin-bound subunit pairs whereas the other axis (the b-axis) is comprised of contiguous biotin-unbound subunit pairs. The diffusivity along the b-axis is approximately 2.4 times larger than that along the a-axis. This anisotropy is ascribed to the difference in the association free energy between the biotin-bound subunit-subunit interaction and the biotin-unbound subunit-subunit interaction. The preferred intermolecular contact occurs between the biotin-unbound subunits. The difference in the intermolecular binding energy between the two types of subunit pair is estimated to be approximately 0.52 kcal mol -1 . Another observed dynamic behavior of point defects was fusion of two point defects into a larger defect, which occurred much more frequently than the fission of a point defect into smaller defects. The diffusivity of point defects increased with increasing defect size. The fusion and the higher diffusivity of larger defects are suggested to be involved in the mechanism for the formation of defect-free crystals

Electron irradiation-induced defects in {beta}-SiC

Energy Technology Data Exchange (ETDEWEB)

Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

1996-04-01

To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

Defect controlled room temperature ferromagnetism in Co-doped barium titanate nanocrystals

International Nuclear Information System (INIS)

Ray, Sugata; Kolen'ko, Yury V; Watanabe, Tomoaki; Yoshimura, Masahiro; Itoh, Mitsuru; Kovnir, Kirill A; Lebedev, Oleg I; Turner, Stuart; Erni, Rolf; Tendeloo, Gustaaf Van; Chakraborty, Tanushree

2012-01-01

Defect mediated high temperature ferromagnetism in oxide nanocrystallites is the central feature of this work. Here, we report the development of room temperature ferromagnetism in nanosized Co-doped barium titanate particles with a size of around 14 nm, synthesized by a solvothermal drying method. A combination of x-ray diffraction with state-of-the-art electron microscopy techniques confirms the intrinsic doping of Co into BaTiO 3 . The development of the room temperature ferromagnetism was tracked down to the different donor defects, namely hydroxyl groups at the oxygen site and oxygen vacancies and their relative concentrations at the surface and the core of the nanocrystal, which could be controlled by post-synthesis drying and thermal treatments.

Defect-impurity interactions in irradiated germanium

International Nuclear Information System (INIS)

Cleland, J.W.; James, F.J.; Westbrook, R.D.

1975-07-01

Results of experiments are used to formulate a better model for the structures of lattice defects and defect-impurity complexes in irradiated n-type Ge. Single crystals were grown by the Czochralski process from P, As, or Sb-doped melts, and less than or equal to 10 15 to greater than or equal to 10 17 oxygen cm -3 was added to the furnace chamber after approximately 1 / 3 of the crystal had been solidified. Hall coefficient and resistivity measurements (at 77 0 K) were used to determine the initial donor concentration due to the dopant and clustered oxygen, and infrared absorption measurements (at 11.7 μ) were used to determine the dissociated oxygen concentration. Certain impurity and defect-impurity interactions were then investigated that occurred as a consequence of selected annealing, quenching, Li diffusion, and irradiation experiments at approximately 300 0 K with 60 Co photons, 1.5 to 2.0 MeV electrons, or thermal energy neutrons. Particular attention was given to determining the electrical role of the irradiation produced interstitial and vacancy, and to look for any evidence from electrical and optical measurements of vacancy--oxygen, lithium--oxygen, and lithium--vacancy interactions. (U.S.)

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

Science.gov (United States)

To, C. K.; Yang, B.; Beling, C. D.; Fung, S.; Ling, C. C.; Gong, M.

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6x1017cm-2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600 °C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

Energy Technology Data Exchange (ETDEWEB)

To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C [Department of Physics, University of Hong Kong (Hong Kong); Gong, M, E-mail: sfung@hkucc.hku.h, E-mail: edwardto04@yahoo.com.h [Department of Physics, Sichuan University, Chengdu (China)

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10{sup 17}cm{sup -2}. Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

International Nuclear Information System (INIS)

To, C K; Yang, B; Beling, C D; Fung, S; Ling, C C; Gong, M

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2 MeV electrons with fluence of 6x10 17 cm -2 . Isochronal annealing from 100 deg. C - 800 deg. C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300 deg. C and 600 deg. C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300 deg. C and 600 deg. C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300 deg. C and 700 deg. C.

Benfotiamine is similar to thiamine in correcting endothelial cell defects induced by high glucose.

Science.gov (United States)

Pomero, F; Molinar Min, A; La Selva, M; Allione, A; Molinatti, G M; Porta, M

2001-01-01

We investigated the hypothesis that benfotiamine, a lipophilic derivative of thiamine, affects replication delay and generation of advanced glycosylation end-products (AGE) in human umbilical vein endothelial cells cultured in the presence of high glucose. Cells were grown in physiological (5.6 mM) and high (28.0 mM) concentrations of D-glucose, with and without 150 microM thiamine or benfotiamine. Cell proliferation was measured by mitochondrial dehydrogenase activity. AGE generation after 20 days was assessed fluorimetrically. Cell replication was impaired by high glucose (72.3%+/-5.1% of that in physiological glucose, p=0.001). This was corrected by the addition of either thiamine (80.6%+/-2.4%, p=0.005) or benfotiamine (87.5%+/-8.9%, p=0.006), although it not was completely normalized (p=0.001 and p=0.008, respectively) to that in physiological glucose. Increased AGE production in high glucose (159.7%+/-38.9% of fluorescence in physiological glucose, p=0.003) was reduced by thiamine (113.2%+/-16.3%, p=0.008 vs. high glucose alone) or benfotiamine (135.6%+/-49.8%, p=0.03 vs. high glucose alone) to levels similar to those observed in physiological glucose. Benfotiamine, a derivative of thiamine with better bioavailability, corrects defective replication and increased AGE generation in endothelial cells cultured in high glucose, to a similar extent as thiamine. These effects may result from normalization of accelerated glycolysis and the consequent decrease in metabolites that are extremely active in generating nonenzymatic protein glycation. The potential role of thiamine administration in the prevention or treatment of vascular complications of diabetes deserves further investigation.

Ion channeling study of defects in compound crystals using Monte Carlo simulations

Science.gov (United States)

Turos, A.; Jozwik, P.; Nowicki, L.; Sathish, N.

2014-08-01

Ion channeling is a well-established technique for determination of structural properties of crystalline materials. Defect depth profiles have been usually determined basing on the two-beam model developed by Bøgh (1968) [1]. As long as the main research interest was focused on single element crystals it was considered as sufficiently accurate. New challenge emerged with growing technological importance of compound single crystals and epitaxial heterostructures. Overlap of partial spectra due to different sublattices and formation of complicated defect structures makes the two beam method hardly applicable. The solution is provided by Monte Carlo computer simulations. Our paper reviews principal aspects of this approach and the recent developments in the McChasy simulation code. The latter made it possible to distinguish between randomly displaced atoms (RDA) and extended defects (dislocations, loops, etc.). Hence, complex defect structures can be characterized by the relative content of these two components. The next refinement of the code consists of detailed parameterization of dislocations and dislocation loops. Defect profiles for variety of compound crystals (GaN, ZnO, SrTiO3) have been measured and evaluated using the McChasy code. Damage accumulation curves for RDA and extended defects revealed non monotonous defect buildup with some characteristic steps. Transition to each stage is governed by the different driving force. As shown by the complementary high resolution XRD measurements lattice strain plays here the crucial role and can be correlated with the concentration of extended defects.

Application of elastic net and infrared spectroscopy in the discrimination between defective and non-defective roasted coffees.

Science.gov (United States)

Craig, Ana Paula; Franca, Adriana S; Oliveira, Leandro S; Irudayaraj, Joseph; Ileleji, Klein

2014-10-01

The quality of the coffee beverage is negatively affected by the presence of defective coffee beans and its evaluation still relies on highly subjective sensory panels. To tackle the problem of subjectivity, sophisticated analytical techniques have been developed and have been shown capable of discriminating defective from non-defective coffees after roasting. However, these techniques are not adequate for routine analysis, for they are laborious (sample preparation) and time consuming, and reliable, simpler and faster techniques need to be developed for such purpose. Thus, it was the aim of this study to evaluate the performance of infrared spectroscopic methods, namely FTIR and NIR, for the discrimination of roasted defective and non-defective coffees, employing a novel statistical approach. The classification models based on Elastic Net exhibited high percentage of correct classification, and the discriminant infrared spectra variables extracted provided a good interpretation of the models. The discrimination of defective and non-defective beans was associated with main chemical descriptors of coffee, such as carbohydrates, proteins/amino acids, lipids, caffeine and chlorogenic acids. Copyright © 2014 Elsevier B.V. All rights reserved.

Coupling between Ge-nanocrystals and defects in SiO2

International Nuclear Information System (INIS)

Skov Jensen, J.; Franzo, G.; Leervad Petersen, T.P.; Pereira, R.; Chevallier, J.; Christian Petersen, M.; Bech Nielsen, B.; Nylandsted Larsen, A.

2006-01-01

Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO 2 films co-doped with Ge is reported. The PL signal is observed in pure SiO 2 , however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO 2 films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO 2 layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO 2 (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO 2 defect

PAT challenges routine techniques on defect spectroscopy in material science

International Nuclear Information System (INIS)

Badawi, E.A.

2005-01-01

Atomic or Point Defects are the most simple defects in solids. Due to the small size their direct observation by the routine techniques is not possible. A single type of defects (thermal defect) was observed in the quenching process. Using the Arrhenius method and threshold method we recommended the accurate both method of treatments. The calculated values for formation enthalpies and self-diffusion using positron lifetime and Doppler broadening in a good agreement in (A356.0) and (A413.1). Specifically it is show how PAT detect defect concentrations, (formation- migration) enthalpies and grain size for the material under investigation. Most of the these data are reported

Point defects and oxidation mechanism in cubic boron nitride

International Nuclear Information System (INIS)

Gorshin, A.P.; Shvajko-Shvajkovskij, V.E.

1994-01-01

A theoretical analysis of the defect formation in boron nitride by the Schottky mechanism within the framework of the quasi-chemical approximation method is carried out. On the base of solution of the disordering equations at different conditions of electroneutrality are obtained the dependences of defect concentrations in β-BN on the partial nitrogen pressure in equilibrium conditions. Experimental checking of the theoretical analysis proposed confirms the hypothesis on the presence of defects of nonstoichiometric origin in the β-BN anion sublattice

Defects and defect processes in nonmetallic solids

CERN Document Server

Hayes, W

2004-01-01

This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3–δ thin films investigated by chemical capacitance measurements

Science.gov (United States)

Rupp, Ghislain M.; Fleig, Jürgen

2018-01-01

La0.6Sr0.4FeO3–δ (LSF) thin films of different thickness were prepared by pulsed laser deposition on yttria stabilized zirconia (YSZ) and characterized by using three electrode impedance spectroscopy. Electrochemical film capacitance was analyzed in relation to oxygen partial pressure (0.25 mbar to 1 bar), DC polarization (0 m to –600 m) and temperature (500 to 650 °C). For most measurement parameters, the chemical bulk capacitance dominates the overall capacitive properties and the corresponding defect chemical state depends solely on the oxygen chemical potential inside the film, independent of atmospheric oxygen pressure and DC polarization. Thus, defect chemical properties (defect concentrations and defect formation enthalpies) could be deduced from such measurements. Comparison with LSF defect chemical bulk data from the literature showed good agreement for vacancy formation energies but suggested larger electronic defect concentrations in the films. From thickness-dependent measurements at lower oxygen chemical potentials, an additional capacitive contribution could be identified and attributed to the LSF|YSZ interface. Deviations from simple chemical capacitance models at high pressures are most probably due to defect interactions. PMID:29671421

Point defects in ZnO crystals grown by various techniques

International Nuclear Information System (INIS)

Čížek, J; Vlček, M; Hruška, P; Lukáč, F; Melikhova, O; Anwand, W; Selim, F; Hugenschmidt, Ch; Egger, W

2017-01-01

In the present work point defects in ZnO crystals were characterized by positron lifetime spectroscopy combined with back-diffusion measurement of slow positrons. Defects in ZnO crystals grown by various techniques were compared. Hydrothermally grown ZnO crystals contain defects characterized by lifetime of ≈181 ps. These defects were attributed to Zn vacancies associated with hydrogen. ZnO crystals prepared by other techniques (Bridgman, pressurized melt growth, and seeded chemical vapour transport) exhibit shorter lifetime of ≈165 ps. Positron back-diffusion studies revealed that hydrothermally grown ZnO crystals contain higher density of defects than the crystals grown by other techniques. The lowest concentration of defects was detected in the crystal grown by seeded chemical vapor transport. (paper)

Partitioning of water between point defects, dislocations, and grain boundaries in olivine

Science.gov (United States)

Tielke, J. A.; Mecklenburgh, J.; Mariani, E.; Wheeler, J.

2017-12-01

Estimates of the storage capacity of water in the interior of the Earth and other terrestrial planets vary significantly. One interpretation is that water in planetary interiors exists primarily as hydrogen ions, dissociated from liquid water, that are associated with point defects in the crystal structure of nominally anhydrous minerals. However, dislocations and grain boundaries may contribute significantly to the storage capacity of water in planetary interiors, but hydrogen concentrations in dislocations and grain boundaries are difficult to quantify. To measure the water storage capacity of dislocations and grain boundaries, we are analyzing results from high-temperature and high-pressure experiments where deuterium, a stable isotope of hydrogen, was incorporated into olivine, the dominate phase in the upper mantle. Compared to hydrogen, deuterium concentrations can be determined at much higher spatial resolution using secondary-ion mass spectroscopy. The concentration of deuterium in the samples will also be quantified using Fourier transform infrared spectroscopy for comparison to results for hydrogen-bearing olivine. The spatial distribution of regions with different densities of geometrically-necessary dislocations and the locations of grain boundaries will be determined using electron-backscatter diffraction (EBSD) analyses. Correlation of the concentration of deuterium with dislocation densities and grain boundaries will be used to examine the partitioning of water-derived species between the different types of defects. Ultimately, these data will be used to place more realistic bounds on the storage capacity of water in the interior of Earth and of other terrestrial planets.

Impact of high field (3.0 T) magnetic resonance imaging on diagnosis of osteochondral defects in the ankle joint

International Nuclear Information System (INIS)

Schibany, N.; Ba-Ssalamah, A.; Marlovits, S.; Mlynarik, V.; Noebauer-Huhmann, I.M.; Striessnig, G.; Shodjai-Baghini, M.; Heinze, G.; Trattnig, S.

2005-01-01

Objective: To evaluate high field magnetic resonance (MR) imaging for imaging of osteochondral defects. Materials and methods: Nine osteochondral defects were simulated in three cadaveric talus specimens using a diamond drill. All specimens were examined on a 1.0 T MR unit and a 3.0 T MR unit. A T2-weighted turbo spin-echo (TSE) sequence with a 2 mm slice thickness and a 256 x 256 matrix size was used on both scanners. The visibility of the osteochondral separation and the presence of susceptibility artifacts at the drilling bores were scored on all images. Results: Compared to the 1.0 T MR unit, the protocol on the 3.0 T MR unit allowed a better delineation of the disruption of the articular cartilage and a better demarcation of the subchondral defect. Differences regarding the visualization of the subchondral defect were found to be statistically significant (P 0.05). The average SNR was higher using 3.0 T MRI (SNR = 12), compared to 1.0 T MRI (SNR = 7). Conclusion: High field MRI enables the acquisition of images with sufficient resolution and higher SNR and has therefore the potential to improve the staging of osteochondral defects

Modeling and experimental methods to predict oxygen distribution in bone defects following cell transplantation.

Science.gov (United States)

Heylman, Christopher M; Santoso, Sharon; Krebs, Melissa D; Saidel, Gerald M; Alsberg, Eben; Muschler, George F

2014-04-01

We have developed a mathematical model that allows simulation of oxygen distribution in a bone defect as a tool to explore the likely effects of local changes in cell concentration, defect size or geometry, local oxygen delivery with oxygen-generating biomaterials (OGBs), and changes in the rate of oxygen consumption by cells within a defect. Experimental data for the oxygen release rate from an OGB and the oxygen consumption rate of a transplanted cell population are incorporated into the model. With these data, model simulations allow prediction of spatiotemporal oxygen concentration within a given defect and the sensitivity of oxygen tension to changes in critical variables. This information may help to minimize the number of experiments in animal models that determine the optimal combinations of cells, scaffolds, and OGBs in the design of current and future bone regeneration strategies. Bone marrow-derived nucleated cell data suggest that oxygen consumption is dependent on oxygen concentration. OGB oxygen release is shown to be a time-dependent function that must be measured for accurate simulation. Simulations quantify the dependency of oxygen gradients in an avascular defect on cell concentration, cell oxygen consumption rate, OGB oxygen generation rate, and OGB geometry.

Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2014-02-01

Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

Fast neutron-induced changes in net impurity concentration of high-resistivity silicon

International Nuclear Information System (INIS)

Tsveybak, I.; Bugg, W.; Harvey, J.A.; Walter, J.

1992-01-01

Resistivity changes produced by 1 MeV neutron irradiation at room temperature have been measured in float-zone grown n and p-type silicon with initial resistivities ranging from 1.8 to 100 kΩcm. Observed changes are discussed in terms of net electrically active impurity concentration. A model is presented which postulates escape of Si self-interstitials and vacancies from damage clusters and their subsequent interaction with impurities and other pre-existing defects in the lattice. These interactions lead to transfer of B and P from electrically active substitutional configurations into electrically inactive positions (B i , Pi i , and E-center), resulting in changes of net electrically active impurity concentration. The changes in spatial distribution of resistivity are discussed, and the experimental data are fit by theoretical curves. Differences in the behavior of n-type and p-type material are explained on the basis of a faster removal of substitutional P and a more nonuniform spatial distribution of the original P concentration

Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

Science.gov (United States)

Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

2008-10-01

The free hole carriers in GaN have been limited to concentrations in the low 1018cm-3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ˜10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ˜1.5×1019cm-3.

On the meaning of sink capture efficiency and sink strength for point defects

International Nuclear Information System (INIS)

Mansur, L.K.; Wolfer, W.G.

1982-01-01

The concepts of sink capture efficiency and sink strength for point defects are central to the theory of point defect reactions in materials undergoing irradiation. Two fundamentally different definitions of the capture efficiency are in current use. The essential difference can be stated simply. The conventional meaning denotes a measure of the loss rate of point defects to sinks per unit mean point defect concentration. A second definition of capture efficiency, introduced recently, gives a measure of the point defect loss rate without normalization to the mean point defect concentration. The relationship between the two capture efficiencies is here derived. By stating the relationship we hope to eliminate confusion caused by comparisons of the two types of capture efficiencies at face value and to provide a method of obtaining one from the other. Internally consistent usage of either of the capture efficiencies leads to the same results for the calculation of measuable quantities, as is required physically. (orig.)

High angle grain boundaries as sources or sinks for point defects

Energy Technology Data Exchange (ETDEWEB)

Balluffi, R.W.

1979-09-01

A secondary grain boundary dislocation climb model for high angle grain boundaries as sources/sinks for point defects is described in the light of recent advances in our knowledge of grain boundary structure. Experimental results are reviewed and are then compared with the expected behavior of the proposed model. Reasonably good consistency is found at the level of our present understanding of the subject. However, several gaps in our present knowledge still exist, and these are identified and discussed briefly.

Defect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopy

International Nuclear Information System (INIS)

Ling, C. C.; Fung, S.; Beling, C. D.; Huimin, Weng

2001-01-01

Defects in p-type Zn-doped liquid-encapsulated Czochralski--grown GaSb were studied by the positron lifetime technique. The lifetime measurements were performed on the as-grown sample at temperature varying from 15 K to 297 K. A positron trapping center having a characteristic lifetime of 317 ps was identified as the neutral V Ga -related defect. Its concentration in the as-grown sample was found to be in the range of 10 17 --10 18 cm -3 . At an annealing temperature of 300 o C, the V Ga -related defect began annealing out and a new defect capable of trapping positrons was formed. This newly formed defect, having a lifetime value of 379 ps, is attributed to a vacancy--Zn-defect complex. This defect started annealing out at a temperature of 580 o C. A positron shallow trap having binding energy and concentration of 75 meV and 10 18 cm -3 , respectively, was also observed in the as-grown sample. This shallow trap is attributed to positrons forming hydrogenlike Rydberg states with the ionized dopant acceptor Zn

Effect of triangular vacancy defect on thermal conductivity and thermal rectification in graphene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Yang, Ping, E-mail: yangpingdm@ujs.edu.cn [Laboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS, Jiangsu University, Zhenjiang 212013 (China); Li, Xialong; Zhao, Yanfan [Laboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS, Jiangsu University, Zhenjiang 212013 (China); Yang, Haiying [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Wang, Shuting, E-mail: wangst@mail.hust.edu.cn [School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

2013-11-01

We investigate the thermal transport properties of armchair graphene nanoribbons (AGNRs) possessing various sizes of triangular vacancy defect within a temperature range of 200–600 K by using classical molecular dynamics simulation. The results show that the thermal conductivities of the graphene nanoribbons decrease with increasing sizes of triangular vacancy defects in both directions across the whole temperature range tested, and the presence of the defect can decrease the thermal conductivity by more than 40% as the number of removed cluster atoms is increased to 25 (1.56% for vacancy concentration) owing to the effect of phonon–defect scattering. In the meantime, we find the thermal conductivity of defective graphene nanoribbons is insensitive to the temperature change at higher vacancy concentrations. Furthermore, the dependence of temperatures and various sizes of triangular vacancy defect for the thermal rectification ration are also detected. This work implies a possible route to achieve thermal rectifier for 2D materials by defect engineering.

On the relationship between rutile/anatase ratio and the nature of defect states in sub-100 nm TiO2 nanostructures: experimental insights

KAUST Repository

Soliman, Moamen M.

2018-02-02

Black TiO2 is being widely investigated due to its superior optical activity and potential applications in photocatalytic hydrogen generation. Herein, the limitations of the hydrogenation process of TiO2 nanostructures are unraveled by exploiting the fundamental tradeoffs affecting the overall efficiency of the water splitting process. To control the nature and concentration of defect states, different reduction rates are applied to sub-100 nm TiO2 nanotubes, chosen primarily for their superiority over their long counterparts. X-Ray Photoelectron Spectroscopy disclosed changes in the stoichiometry of TiO2 with the reduction rate. UV-vis and Raman spectra showed that high reduction rates promote the formation of the rutile phase in TiO2, which is inactive towards water splitting. Furthermore, electrochemical analysis revealed that such high rates induce a higher concentration of localized electronic defect states that hinder the water splitting performance. Finally, incident photon-to-current conversion efficiency (IPCE) highlighted the optimum reduction rate that attains a relatively lower defect concentration as well as lower rutile content, thereby achieving the highest conversion efficiency.

High-accuracy defect sizing for CRDM penetration adapters using the ultrasonic TOFD technique

International Nuclear Information System (INIS)

Atkinson, I.

1995-01-01

Ultrasonic time-of-flight diffraction (TOFD) is the preferred technique for critical sizing of throughwall orientated defects in a wide range of components, primarily because it is intrinsically more accurate than amplitude-based techniques. For the same reason, TOFD is the preferred technique for sizing the cracks in control rod drive mechanism (CRDM) penetration adapters, which have been the subject of much recent attention. Once the considerable problem of restricted access for the UT probes has been overcome, this inspection lends itself to very high accuracy defect sizing using TOFD. In qualification trials under industrial conditions, depth sizing to an accuracy of ≤ 0.5 mm has been routinely achieved throughout the full wall thickness (16 mm) of the penetration adapters, using only a single probe pair and without recourse to signal processing. (author)

Automatic inspection of surface defects in die castings after machining

Directory of Open Access Journals (Sweden)

S. J. Świłło

2011-07-01

Full Text Available A new camera based machine vision system for the automatic inspection of surface defects in aluminum die casting was developed by the authors. The problem of surface defects in aluminum die casting is widespread throughout the foundry industry and their detection is of paramount importance in maintaining product quality. The casting surfaces are the most highly loaded regions of materials and components. Mechanical and thermal loads as well as corrosion or irradiation attacks are directed primarily at the surface of the castings. Depending on part design and processing techniques, castings may develop surface discontinuities such as cracks or tears, inclusions due to chemical reactions or foreign material in the molten metal, and pores that greatly influence the material ability to withstand these loads. Surface defects may act as a stress concentrator initiating a fracture point. If a pressure is applied in this area, the casting can fracture. The human visual system is well adapted to perform in areas of variety and change; the visual inspection processes, on the other hand, require observing the same type of image repeatedly to detect anomalies. Slow, expensive, erratic inspection usually is the result. Computer based visual inspection provides a viable alternative to human inspectors. Developed by authors machine vision system uses an image processing algorithm based on modified Laplacian of Gaussian edge detection method to detect defects with different sizes and shapes. The defect inspection algorithm consists of three parameters. One is a parameter of defects sensitivity, the second parameter is a threshold level and the third parameter is to identify the detected defects size and shape. The machine vision system has been successfully tested for the different types of defects on the surface of castings.

Multijunction Photovoltaic Technologies for High-Performance Concentrators: Preprint

Energy Technology Data Exchange (ETDEWEB)

McConnell, R.; Symko-Davies, M.

2006-05-01

Multijunction solar cells provide high-performance technology pathways leading to potentially low-cost electricity generated from concentrated sunlight. The National Center for Photovoltaics at the National Renewable Energy Laboratory has funded different III-V multijunction solar cell technologies and various solar concentration approaches. Within this group of projects, III-V solar cell efficiencies of 41% are close at hand and will likely be reported in these conference proceedings. Companies with well-developed solar concentrator structures foresee installed system costs of $3/watt--half of today's costs--within the next 2 to 5 years as these high-efficiency photovoltaic technologies are incorporated into their concentrator photovoltaic systems. These technology improvements are timely as new large-scale multi-megawatt markets, appropriate for high performance PV concentrators, open around the world.

Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

KAUST Repository

Flemban, Tahani H.; Sequeira, M. C.; Zhang, Z.; Venkatesh, S.; Alves, E.; Lorenz, K.; Roqan, Iman S.

2016-01-01

Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

KAUST Repository

Flemban, Tahani H.

2016-02-08

Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

Effect of silicon content and defects on the lifetime of ductile cast iron

Directory of Open Access Journals (Sweden)

Alhussein Akram

2014-06-01

Full Text Available In this work, the influence of microstructure on the mechanical properties has been studied for different grades of ferritic ductile cast iron. Mechanical tests were carried out and the effect of silicon on the resistance of material was well noticed. An increasing silicon content increases the strength and decreases the ductility of material. The lifetime and endurance limit of material were affected by the presence of defects in material and microstructure heterogeneity. Metallurgical characterizations showed that the silicon was highly segregated around graphite nodules which leads to the initiation of cracks. The presence of defects causes the stress concentration and leads to the initiation and propagation of cracks.

AFM studies of a new type of radiation defect on mica surfaces caused by highly charged ion impact

International Nuclear Information System (INIS)

Ruehlicke, C.; Briere, M.A.; Schneider, D.

1994-01-01

Radiation induced defects on mica caused by the impact of slow very highly charged ions (SVHCI) have been investigated with an atomic force microscope (AFM). Freshly cleaved surfaces of different types of muscovite were irradiated with SVHCI extracted from the LLNL electron beam ion trap (EBIT) at velocities of ca. 2 keV/amu. Atomic force microscopy of the surface reveals the formation of blisterlike defects associated with single ion impact. The determined defect volume which appears to increase linearly with the incident charge state and exhibits a threshold incident charge state has been determined using the AFM. These results indicate that target atoms are subjected to mutual electrostatic repulsion due to ionization through potential electron emission upon approach of the ion. If the repulsion leads to permanent atomic displacement, surface defects are formed

Defect-induced local variation of crystal phase transition temperature in metal-halide perovskites.

Science.gov (United States)

Dobrovolsky, Alexander; Merdasa, Aboma; Unger, Eva L; Yartsev, Arkady; Scheblykin, Ivan G

2017-06-26

Solution-processed organometal halide perovskites are hybrid crystalline semiconductors highly interesting for low-cost and efficient optoelectronics. Their properties are dependent on the crystal structure. Literature shows a variety of crystal phase transition temperatures and often a spread of the transition over tens of degrees Kelvin. We explain this inconsistency by demonstrating that the temperature of the tetragonal-to-orthorhombic phase transition in methylammonium lead triiodide depends on the concentration and nature of local defects. Phase transition in individual nanowires was studied by photoluminescence microspectroscopy and super-resolution imaging. We propose that upon cooling from 160 to 140 K, domains of the crystal containing fewer defects stay in the tetragonal phase longer than highly defected domains that readily transform to the high bandgap orthorhombic phase at higher temperatures. The existence of relatively pure tetragonal domains during the phase transition leads to drastic photoluminescence enhancement, which is inhomogeneously distributed across perovskite microcrystals.Understanding crystal phase transition in materials is of fundamental importance. Using luminescence spectroscopy and super-resolution imaging, Dobrovolsky et al. study the transition from the tetragonal to orthorhombic crystal phase in methylammonium lead triiodide nanowires at low temperature.

Vacancy defect and defect cluster energetics in ion-implanted ZnO

Science.gov (United States)

Dong, Yufeng; Tuomisto, F.; Svensson, B. G.; Kuznetsov, A. Yu.; Brillson, Leonard J.

2010-02-01

We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.

High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation.

Science.gov (United States)

Jung, Su Min; Kang, Han Lim; Won, Jong Kook; Kim, JaeHyun; Hwang, ChaHwan; Ahn, KyungHan; Chung, In; Ju, Byeong-Kwon; Kim, Myung-Gil; Park, Sung Kyu

2018-01-31

The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- , to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm 2 /(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.

Defects at oxide surfaces

CERN Document Server

Thornton, Geoff

2015-01-01

This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides. Numerical simulations of defective structures complete the picture developed. Defects on planar surfaces form the focus of much of the book, although the investigation of powder samples also form an important part. The experimental study of planar surfaces opens the possibility of applying the large armoury of techniques that have been developed over the last half-century to study surfaces in ultra-high vacuum. This enables the acquisition of atomic level data under well-controlled conditions, providing a stringent test of theoretical methods. The latter can then be more reliably applied to systems such as nanoparticles for which accurate methods of characterization of structure and electronic properties ha...

Impurity Role In Mechanically Induced Defects

International Nuclear Information System (INIS)

Howell, R.H.; Asoka-Kumar, P.; Hartley, J.; Sterne, P.

2000-01-01

An improved understanding of dislocation dynamics and interactions is an outstanding problem in the multi scale modeling of materials properties, and is the current focus of major theoretical efforts world wide. We have developed experimental and theoretical tools that will enable us to measure and calculate quantities defined by the defect structure. Unique to the measurements is a new spectroscopy that determines the detailed elemental composition at the defect site. The measurements are based on positron annihilation spectroscopy performed with a 3 MeV positron beam [1]. Positron annihilation spectroscopy is highly sensitive to dislocations and associated defects and can provide unique elements of the defect size and structure. Performing this spectroscopy with a highly penetrating positron beam enables flexibility in sample handling. Experiments on fatigued and stressed samples have been done and in situ measurement capabilities have been developed. We have recently performed significant upgrades to the accelerator operation and novel new experiments have been performed [2-4] To relate the spectrographic results and the detailed structure of a defect requires detailed calculations. Measurements are coupled with calculated results based on a description of positions of atoms at the defect. This gives an atomistic view of dislocations and associated defects including impurity interactions. Our ability to probe impurity interactions is a unique contribution to defect understanding not easily addressed by other atomistic spectroscopies

A study of point defects in quenched stainless steels

International Nuclear Information System (INIS)

Kheloufi, Khelifa.

1977-07-01

Thin foils of stainless steels (18%Cr, 14%Ni) containing boron (50x10 -6 ) and stabilised with titanium have been quenched at different rates in order to observe secondary defects by transmission electron microscopy. A rapid quenching in gallium has not given any secondary defects either before or after annealing. But samples quenched from temperatures greater than 800 0 C-900 0 C exhibit a dislocation density approximately 10 9 cm/cm 3 . A vacancy concentration less than 10 -6 has been observed by positron annihilation technique. After a moderate quenching, any secondary defects has been observed. It is thus clear that boron does not favour the secondary defects formation as does phosphorus [fr

Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

International Nuclear Information System (INIS)

Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

2008-01-01

The free hole carriers in GaN have been limited to concentrations in the low 10 18 cm -3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5x10 19 cm -3

Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

International Nuclear Information System (INIS)

Casse, G.; Glaser, M.; Lemeilleur, F.; Ruzin, A.; Wegrzecki, M.

1999-01-01

The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentration (>10 17 atoms cm -3 ) cannot readily be achieved during the FZ silicon refinement. The diffusion of oxygen at elevated temperatures from a SiO 2 layer grown on both sides of a silicon wafer is a simple and effective technique to achieve high and uniform concentrations of oxygen throughout the bulk of a 300 μm thick silicon wafer

Detection method based on Kalman filter for high speed rail defect AE signal on wheel-rail rolling rig

Science.gov (United States)

Hao, Qiushi; Shen, Yi; Wang, Yan; Zhang, Xin

2018-01-01

Nondestructive test (NDT) of rails has been carried out intermittently in traditional approaches, which highly restricts the detection efficiency under rapid development of high speed railway nowadays. It is necessary to put forward a dynamic rail defect detection method for rail health monitoring. Acoustic emission (AE) as a practical real-time detection technology takes advantage of dynamic AE signal emitted from plastic deformation of material. Detection capacities of AE on rail defects have been verified due to its sensitivity and dynamic merits. Whereas the application under normal train service circumstance has been impeded by synchronous background noises, which are directly linked to the wheel speed. In this paper, surveys on a wheel-rail rolling rig are performed to investigate defect AE signals with varying speed. A dynamic denoising method based on Kalman filter is proposed and its detection effectiveness and flexibility are demonstrated by theory and computational results. Moreover, after comparative analysis of modelling precision at different speeds, it is predicted that the method is also applicable for high speed condition beyond experiments.

Formation and properties of radiation-induced defects and radiolysis products in lithium orthosilicate

Energy Technology Data Exchange (ETDEWEB)

Tiliks, J.E.; Kizane, G.K.; Supe, A.A.; Abramenkovs, A.A.; Tiliks, J.J. (Latvian Univ., Riga (Latvia)); Vasiljev, V.G. (Acad. A.A. Bochvar Inst. of Inorganic Materials, Moscow (USSR))

1991-12-01

Formation and properties of radiation-induced defects and radiolysis products in polycrystalline powders and ceramic pellets of Li{sub 4}SiO{sub 4} were studied under the effect of various types of ionizing irradiation ({gamma} quants, accelerated electrons, reactor irradiation), humidity, temperature, impurities in the samples, etc. The content of radiation defects and radiolysis products poorly depends on irradiation type, dose rate, admixture elements. The concentration of defects highly depends on the temperature of irradiation, humidity, granural size. Empirical dependence of radiolysis degree {alpha} on the dose was found: {alpha}=5x10{sup -2}xD{sup 0.5} for {gamma} and electron irradiation (T{sub rad}=300-350 K) and {alpha}=5x10{sup -3}xD{sup 0.5} for reactor radiation (T{sub rad}=700-800 K); {alpha} - matrix dissociation degree (in %); D - dose (in MGy). Colloidal lithium and silicon, lithium and silicon oxides, and O{sub 2} are the final products of radiolysis. Radiation-induced defects change tritium thermo-extraction parameters, deteriorate mechanical, thermo-physical and electric properties of ceramics. (orig.).

On the Enthalpy and Entropy of Point Defect Formation in Crystals

Science.gov (United States)

Kobelev, N. P.; Khonik, V. A.

2018-03-01

A standard way to determine the formation enthalpy H and entropy S of point defect formation in crystals consists in the application of the Arrhenius equation for the defect concentration. In this work, we show that a formal use of this method actually gives the effective (apparent) values of these quantities, which appear to be significantly overestimated. The underlying physical reason lies in temperature-dependent formation enthalpy of the defects, which is controlled by temperature dependence of the elastic moduli. We present an evaluation of the "true" H- and S-values for aluminum, which are derived on the basis of experimental data by taking into account temperature dependence of the formation enthalpy related to temperature dependence of the elastic moduli. The knowledge of the "true" activation parameters is needed for a correct calculation of the defect concentration constituting thus an issue of major importance for different fundamental and application issues of condensed matter physics and chemistry.

Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control

International Nuclear Information System (INIS)

Johns, Paul M.; Baciak, James E.; Nino, Juan C.

2016-01-01

Some of the more attractive semiconducting compounds for ambient temperature radiation detector applications are impacted by low charge collection efficiency due to the presence of point and volumetric defects. This has been particularly true in the case of BiI_3, which features very attractive properties (density, atomic number, band gap, etc.) to serve as a gamma ray detector, but has yet to demonstrate its full potential. We show that by applying growth techniques tailored to reduce defects, the spectral performance of this promising semiconductor can be realized. Gamma ray spectra from >100 keV source emissions are now obtained from high quality Sb:BiI_3 bulk crystals with limited concentrations of defects (point and extended). The spectra acquired in these high quality crystals feature photopeaks with resolution of 2.2% at 662 keV. Infrared microscopy is used to compare the local microstructure between radiation sensitive and non-responsive crystals. This work demonstrates that BiI_3 can be prepared in melt-grown detector-grade samples with superior quality and can acquire the spectra from a variety of gamma ray sources.

A case difficult to diagnose in adults: High sinus venous atrial septal defect

Directory of Open Access Journals (Sweden)

Ozge Cetinarslan

2018-01-01

Full Text Available Sinus venous atrial septal defect (SVD is highly difficult to diagnose because of its location. Below, we report a case of SVD which is misdiagnosed as pulmonary hypertension and anomalous pulmonary venous return. A 57-year-old female patient was referred to congenital disease outpatient clinic of a tertiary center. She was admitted to the hospital with complaints of fatigue and exercise dyspnea which had started a year ago. She had transthoracic echocardiography (TTE examination done in another hospital which showed dilated right heart chambers and pulmonary hypertension. She underwent transesophageal echocardiography (TEE examination with the suspicion of atrial septal defect (ASD, but no defect was seen. As her symptoms persisted, we repeated the TTE and TEE examination in our center. TEE revealed 0.6 cm ASD on the upper side of the interatrial septum. All four pulmonary veins were draining into the left atrium. Right heart catheterization (RHC confirmed the diagnosis. A left-to-right shunt was detected and localized by a significant step-up in blood oxygen saturation found between mid and upper segments of the right atrium. According to our TEE and RHC results, we planned the surgical closure of the defect. Sinus venous ASD is deficiency of the superior portion of atrial septum adjacent to superior vena cava. Diagnosis of SVD is often more difficult than other forms of ASD and may require special imaging such as TEE, magnetic resonance imaging, or computed tomographic scanning. In conclusion, cardiologists must be aware about the possibility of SVD patients who have unexplained exertional dyspnea and fatigue, dilated right atrium and ventricle, pulmonary hypertension, paradoxical embolism, or atrial arrhythmias in their respective populations.

Extremely high concentration of folates in premature newborns.

Science.gov (United States)

Zikavska, T; Brucknerova, I

2014-01-01

Extremely high concentration of folates in premature newborns: case reports. Folates are a group of water soluble compounds, which are important for metabolic processes in human body. These are important during periods of rapid cell growth. The most accurate indicator of long-term folate level status in the body is the determination of red blood cell (RBC) folate concentrations. The optimal level of RBC folate is not known in neonatal period. Authors discuss the reasons for extremely high level of RBC folate concentrations. In our work we present the cases of two premature newborns with extremely high level of RBC folate concentrations, which were analyzed immunochemically on the first day of life and after six weeks of life. In both cases we measured RBC folate concentrations on the 1st day of life. After 6 weeks we found extremely high RBC folate concentration level (5516.67 ng/ml) in the first case after RBC transfusions. In second case after two months of life the RBC folate concentration level was doubled (2335.1 ng/ml) until 24 hours after RBC transfusion compared to levels after birth. The normal range of RBC folate values vary in newborns. The upper limit of daily dose of folic acid in pregnancy and neonatal period is not known. On the other hand it is an easily excreted water-soluble vitamin but in premature newborn it can lead to the disruption of metabolic balance and slow its degradation. Some factors can have an impact on RBC folate concentration. Blood transfusion can be one of the main influences on RBC folate concentration. To clarify these mechanisms further studies are required (Ref. 29).

Intrinsic defect processes and O migration in PrBa(Co/Fe)2O5.5

KAUST Repository

Salawu, Omotayo Akande

2016-02-10

© 2016 The Royal Society of Chemistry. New mixed ion-electron conductors are desired to lower the operating temperature of solid oxide fuel cells. The O Frenkel energy and migration of O ions in PrBa(Co/Fe)2O5.5 are studied for this purpose by density functional theory. The electronic structure and charge redistribution during defect formation are analyzed. We demonstrate that Co → Fe substitution strongly affects the formation of defects and consequently the O migration. The low O Frenkel energy points to a high concentration of O vacancies. The migration of the O ions shows a distinct anisotropy.

Topological defect clustering and plastic deformation mechanisms in functionalized graphene

Science.gov (United States)

Nunes, Ricardo; Araujo, Joice; Chacham, Helio

2011-03-01

We present ab initio results suggesting that strain plays a central role in the clustering of topological defects in strained and functionalized graphene models. We apply strain onto the topological-defect graphene networks from our previous work, and obtain topological-defect clustering patterns which are in excellent agreement with recent observations in samples of reduced graphene oxide. In our models, the graphene layer, containing an initial concentration of isolated topological defects, is covered by hydrogen or hydroxyl groups. Our results also suggest a rich variety of plastic deformation mechanism in functionalized graphene systems. We acknowledge support from the Brazilian agencies: CNPq, Fapemig, and INCT-Materiais de Carbono.

Characterization of lacunar defects by positrons annihilation

International Nuclear Information System (INIS)

Barthe, M.F.; Corbel, C.; Blondiaux, G.

2003-01-01

Among the nondestructive methods for the study of matter, the positrons annihilation method allows to sound the electronic structure of materials by measuring the annihilation characteristics. These characteristics depend on the electronic density as seen by the positon, and on the electron momentums distribution which annihilate with the positon. The positon is sensible to the coulombian potential variations inside a material and sounds preferentially the regions away from nuclei which represent potential wells. The lacunar-type defects (lack of nuclei) represent deep potential wells which can trap the positon up to temperatures close to the melting. This article describes the principles of this method and its application to the characterization of lacunar defects: 1 - positrons: matter probes (annihilation of electron-positon pairs, annihilation characteristics, positrons sources); 2 - positrons interactions in solids (implantation profiles, annihilation states, diffusion and trapping, positon lifetime spectrum: evolution with the concentration of defects); 3 - measurement of annihilation characteristics with two gamma photons (lifetime spectroscopy with the β + 22 Na isotope, spectroscopy of Doppler enlargement of the annihilation line); 4 - determination of the free volume of defects inside or at the surface of materials (annihilation signature in lacunar defects, lacuna, lacunar clusters and cavities, acceptors nature in semiconductors: ionic or lacunar, interface defects, precipitates in alloys); 5 - conclusions. (J.S.)

Wafer plane inspection for advanced reticle defects

Science.gov (United States)

Nagpal, Rajesh; Ghadiali, Firoz; Kim, Jun; Huang, Tracy; Pang, Song

2008-05-01

Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMSTM.

Stress concentration effects in high pressure components

International Nuclear Information System (INIS)

Aller, J.E.

1990-01-01

This paper examines the stress concentration effects of sideholes in thick walled, high pressure cylinders. It has been shown that the theoretical stress concentration factor at the intersection of a small crossbore in a closed end, thick walled cylinder varies between 3.0 and 4.0. Tests have shown that this effect can be greatly reduced in practice by carefully radiusing the bore intersection and autofrettaging the cylinder. It has also been shown that the minimum stress concentration factor occurs when the main bore and sidehole or crossbore have the same diameter, and the radius of the intersection is approximately equal to the sidehole radius. When the bore and sidehole intersection angle decreases from 90 degrees, the stress concentration factor increases significantly. Knowledge of these fundamental relationships can be used in maintaining, as well ad designing, high pressure equipment

Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

KAUST Repository

Wu, Xing

2018-04-14

Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni‐electrode/HfOx/SiO2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfOx/SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.

Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

KAUST Repository

Wu, Xing; Yu, Kaihao; Cha, Dong Kyu; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xixiang; Li, Kun; Liu, Qi; Sun, Litao; Pey, Kinleong

2018-01-01

Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni‐electrode/HfOx/SiO2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfOx/SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.

Paramagnetic defects in hydrogenated amorphous carbon powders

International Nuclear Information System (INIS)

Keeble, D J; Robb, K M; Smith, G M; Mkami, H El; Rodil, S E; Robertson, J

2003-01-01

Hydrogenated amorphous carbon materials typically contain high concentrations of paramagnetic defects, the density of which can be quantified by electron paramagnetic resonance (EPR). In this work EPR measurements near 9.5, 94, and 189 GHz have been performed on polymeric and diamond-like hydrogenated amorphous carbon (a-C:H) powder samples. A similar single resonance line was observed at all frequencies for the two forms of a-C:H studied. No contributions to the spectrum from centres with resolved anisotropic g-values as reported earlier were detected. An increase in linewidth with microwave frequency was observed. Possible contributions to this frequency dependence are discussed

Influence of oxygen impurity atoms on defect clusters and radiation hardening in neutron-irradiated vanadium

International Nuclear Information System (INIS)

Bajaj, R.; Wechsler, M.S.

1975-01-01

Single crystal TEM samples and polycrystalline tensile samples of vanadium containing 60-640 wt ppm oxygen were irradiated at about 100 0 C to about 1.3 x 10 19 neutrons/cm 2 (E greater than 1 MeV) and post-irradiation annealed up to 800 0 C. The defect cluster density increased and the average size decreased with increasing oxygen concentration. Higher oxygen concentrations caused the radiation hardening and radiation-anneal hardening to increase. The observations are consistent with the nucleation of defect clusters by small oxygen or oxygen-point defect complexes and the trapping of oxygen at defect clusters upon post-irradiation annealing

Case study of elevated layers of high sulfate concentration

International Nuclear Information System (INIS)

McNaughton, D.J.; Orgill, M.M.

1979-01-01

During studies in August 1976 that were part of the Multi-State Atmospheric Power Production Pollutant Study (MAP3S), Alkezweeny et al., (1977) noted that in the Milwaukee urban plume, layers of relatively high sulfate concentrations occurred at high altitudes with respect to the boundary layer. This paper represents a progress report on studies undertaken to investigate possible causes for a bimodel vertical profile of sulfate concentrations. Data presented by Alkezweeny et al., (1977) serve as a basis for this study. Data from August 23, 1976, and August 24, 1978, indicate concentrations relatively high in sulfate, at 1000 and 6000 ft, respectively, with lower concentrations at lower altitudes. Concentrations of trace metals also indicate no peaks in the vertical concentration profiles above the surface. Initial studies of the high, elevated sulfate concentrations have centered on the August 23 measurements taken over southeast Wisconsin using synoptic data from the national weather service, emissions data from the national emissions data bank system (EPA), air quality data from the national air surveillance network (EPA), and satellite photographs from the EROS Data Center

Neutron cross sections for defect production by high-energy displacement cascades in copper

International Nuclear Information System (INIS)

Heinisch, H.L.; Mann, F.M.

1983-08-01

Defect production cross sections for copper have been devised, based on computer simulations of displacement cascades. One thousand cascades ranging in energy from 200 eV to 200 keV were generated with the MARLOWE computer code. The cascades were subjected to a semi-empirical cascade quenching procedure and to short-term annealing with the ALSOME computer code. Functions were fitted to the numbers of defects produced as a function of primary knock-on atom (PKA) damage energy for the following defect types: 1) the total number of point defects after quenching and after short-term annealing, 2) the numbers of free interstitials and free vacancies after shortterm annealing, and 3) the numbers and sizes of vacancy and interstitial clusters after shortterm annealing. In addition, a function describing the number of distinct damage regions (lobes) per cascade was fitted to results of a graphical analysis of the cascade configurations. The defect production functions have been folded into PKA spectra using the NJOY nuclear data processing code system with ENDF/B-V nuclear data to yield neutron cross sections for defect production in copper. The free vacancy cross section displays much less variation with neutron energy than the cross sections for damage energy or total point defects

Neutron cross sections for defect production by high energy displacement cascades in copper

International Nuclear Information System (INIS)

Heinisch, H.L.; Mann, F.M.

1984-01-01

Defect production cross sections for copper have been devised, based on computer simulations of displacement cascades. One thousand cascades ranging in energy from 200 eV to 200 keV were generated with the MARLOWE computer code. The cascades were subjected to a semi-empirical cascade quenching procedure and to short-term annealing with the ALSOME computer code. Functions were fitted to the numbers of defects produced as a function of primary knock-on atom (PKA) damage energy for the following defect types: 1) the total number of point defects after quenching and after short-term annealing, 2) the numbers of free interstitials and free vacancies after short-term annealing, and 3) the numbers and sizes of vacancy and interstitial clusters after short-term annealing. In addition, a function describing the number of distinct damage regions (lobes) per cascade was fitted to results of a graphical analysis of the cascade configurations. The defect production functions have been folded into PKA spectra using the NJOY nuclear data processing code system with ENDF/B-V nuclear data to yield neutron cross sections for defect production in copper. The free vacancy cross section displays much less variation with neutron energy than the cross sections for damage energy or total point defects. (orig.)

Acetate biodegradation by anaerobic microorganisms at high pH and high calcium concentration

International Nuclear Information System (INIS)

Yoshida, Takahiro

2011-01-01

Acetate biodegradation at a high pH and a high calcium concentration was examined to clarify the effect of bacterial activity on the migration of organic 14 C compounds in cementitious repositories. Tamagawa river sediment or Teganuma pond sediment was anaerobically cultured with 5 mM acetate and 10 mM nitrate at pH 9.5-12 at 30 o C. After 20 and 90 days, the acetate concentration of the culture medium was analyzed and found to have decreased below 5 mM at pH ≤ 11. On the other hand, it did not decrease when either sediment was incubated in the absence of nitrate. These results suggest that nitrate-reducing bacteria can biodegrade acetate under more alkaline conditions than the reported pH range in which nitrate-reducing bacteria can exhibit activity. Acetate biodegradation was also examined at a high calcium concentration. Sediments were anaerobically cultured at pH 9.5 with 5 mM acetate and 10 mM nitrate in solution, equilibrated with ordinary Portland cement hydrate, in which the Ca concentration was 14.6 mM. No decrease in acetate concentration after incubation of the sediments was observed, nor was it lower than in the absence of cementitious composition, suggesting that kinetics of acetate biodegradation by anaerobic microorganisms is lowered by a high Ca concentration. - Research highlights: → Acetate biodegradation at a high pH and a high calcium concentration was examined to clarify the effect of bacterial activity on the migration of organic 14 C compounds in cementitious repositories. → Nitrate-reducing bacteria can biodegrade acetate at pH ≤ 11. → Kinetics of acetate biodegradation by anaerobic microorganisms might be lowered by a high Ca concentration.

Combined computational and experimental study of Ar beam induced defect formation in graphite

International Nuclear Information System (INIS)

Pregler, Sharon K.; Hayakawa, Tetsuichiro; Yasumatsu, Hisato; Kondow, Tamotsu; Sinnott, Susan B.

2007-01-01

Irradiation of graphite, commonly used in nuclear power plants, is known to produce structural damage. Here, experimental and computational methods are used to study defect formation in graphite during Ar irradiation at incident energies of 50 eV. The experimental samples are analyzed with scanning tunneling microscopy to quantify the size distribution of the defects that form. The computational approach is classical molecular dynamic simulations that illustrate the mechanisms by which the defects are produced. The results indicate that defects in graphite grow in concentrated areas and are nucleated by the presence of existing defects

Incorporation of defects into the central atoms model of a metallic glass

International Nuclear Information System (INIS)

Lass, Eric A.; Zhu Aiwu; Shiflet, G.J.; Joseph Poon, S.

2011-01-01

The central atoms model (CAM) of a metallic glass is extended to incorporate thermodynamically stable defects, similar to vacancies in a crystalline solid, within the amorphous structure. A bond deficiency (BD), which is the proposed defect present in all metallic glasses, is introduced into the CAM equations. Like vacancies in a crystalline solid, BDs are thermodynamically stable entities because of the increase in entropy associated with their creation, and there is an equilibrium concentration present in the glassy phase. When applied to Cu-Zr and Ni-Zr binary metallic glasses, the concentration of thermally induced BDs surrounding Zr atoms reaches a relatively constant value at the glass transition temperature, regardless of composition within a given glass system. Using this 'critical' defect concentration, the predicted temperatures at which the glass transition is expected to occur are in good agreement with the experimentally determined glass transition temperatures for both alloy systems.

Trapping of hydrogen isotopes in radiation defects formed in tungsten by neutron and ion irradiations

Energy Technology Data Exchange (ETDEWEB)

Hatano, Y., E-mail: hatano@ctg.u-toyama.ac.jp [Hydrogen Isotope Research Center, University of Toyama, Toyama 930-8555 (Japan); Shimada, M. [Fusion Safety Program, Idaho National Laboratory, Idaho Falls, ID 83415 (United States); Alimov, V.Kh.; Shi, J.; Hara, M.; Nozaki, T. [Hydrogen Isotope Research Center, University of Toyama, Toyama 930-8555 (Japan); Oya, Y.; Kobayashi, M.; Okuno, K. [Faculty of Science, Shizuoka University, Shizuoka 422-8529 (Japan); Oda, T. [Department of Nuclear Engineering and Management, The University of Tokyo, Tokyo 113-8656 (Japan); Cao, G. [Department of Engineering Physics, The University of Wisconsin, Madison, WI 53706 (United States); Yoshida, N.; Futagami, N. [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan); Sugiyama, K.; Roth, J.; Tyburska-Püschel, B.; Dorner, J. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Takagi, I. [Department of Nuclear Engineering, Kyoto University, Kyoto 606-8501 (Japan); Hatakeyama, M.; Kurishita, H. [Institute for Materials Research, Tohoku University, Oarai 311-1313 (Japan); and others

2013-07-15

Retention of D in neutron-irradiated W and desorption were examined after plasma exposure at 773 K. Deuterium was accumulated at a relatively high concentration up to a large depth of 50–100 μm due to the trapping effects of defects uniformly induced in the bulk. A significant D release in a vacuum continued to temperatures ⩾1173 K because of the small effective diffusion coefficient and the long diffusion distance. Exposure of ion-irradiated W to D{sub 2} gas showed a clear correlation between concentrations of trapped and solute D as determined by the trapping–detrapping equilibrium. These observations indicated that the accumulation of tritium in high concentrations is possible even at high temperatures if the concentration of solute tritium is high, and baking at moderate temperatures is ineffective for removal of tritium deeply penetrating into the bulk. Nevertheless, clear enhancement of D release was observed under the presence of solute H.

Lumber defect detection by ultrasonics

Science.gov (United States)

K. A. McDonald

1978-01-01

Ultrasonics, the technology of high-frequency sound, has been developed as a viable means for locating most defects In lumber for use in digital form in decision-making computers. Ultrasonics has the potential for locating surface and internal defects in lumber of all species, green or dry, and rough sawn or surfaced.

Defects study of hydrogenated amorphous silicon samples and their relation with the substrate and deposition conditions

International Nuclear Information System (INIS)

Darwich, R.

2009-07-01

The goal of this work is to study the properties of the defects aiming to explore the types of defects and the effect of various deposition parameters such as substrate temperature, the kind of the substrate, gas pressure and deposition rate. Two kinds of samples have been used; The first one was a series of Schottky diodes, and the second one a series of solar cells (p-i-n junction) deposited on crystalline silicon or on corning glass substrates with different deposition parameters. The deposition parameters were chosen to obtain materials whose their structures varying from amorphous to microcrystalline silicon including polymorphous silicon. Our results show that the polymorphous silicon samples deposited at high deposition rates present the best photovoltaic properties in comparison with those deposited at low rates. Also we found that the defects concentration in high deposition rate samples is less at least by two orders than that obtained in low deposition rate polymorphous, microcrystalline and amorphous samples. This study shows also that there is no effect of the substrate, or the thin films of highly doped amorphous silicon deposited on the substrate, on the creation and properties of these defects. Finally, different experimental methods have been used; a comparison between their results has been presented. (author)

Conference Analysis Report of Assessments on Defect and Damage for a High Temperature Structure

International Nuclear Information System (INIS)

Lee, Hyeong Yeon

2008-11-01

This report presents the analysis on the state-of-the-art research trends on creep-fatigue damage, defect assessment of high temperature structure, development of heat resistant materials and their behavior at high temperature based on the papers presented in the two international conferences of ASME PVP 2008 which was held in Chicago in July 2008 and CF-5(5th International Conference on Creep, Fatigue and Creep-Fatigue) which was held in Kalpakkam, India in September 2008

Conference Analysis Report of Assessments on Defect and Damage for a High Temperature Structure

Energy Technology Data Exchange (ETDEWEB)

Lee, Hyeong Yeon

2008-11-15

This report presents the analysis on the state-of-the-art research trends on creep-fatigue damage, defect assessment of high temperature structure, development of heat resistant materials and their behavior at high temperature based on the papers presented in the two international conferences of ASME PVP 2008 which was held in Chicago in July 2008 and CF-5(5th International Conference on Creep, Fatigue and Creep-Fatigue) which was held in Kalpakkam, India in September 2008.

Defect phase diagram for doping of Ga2O3

OpenAIRE

Stephan Lany

2018-01-01

For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have d...

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

DEFF Research Database (Denmark)

Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

2014-01-01

Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding...... short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account...

Controlling defects and secondary phases of CZTS by surfactant Potassium

Science.gov (United States)

Zhu, Junyi; Zhang, Yiou; Tse, Kinfai; Xiao, Xudong

Cu2ZnSnS4 (CZTS) is a promising photovoltaic absorber material with earth abundant and nontoxic elements. However, the detrimental native defects and secondary phases of CSTS will largely reduce the energy conversion efficiencies. To understand the origin of these problems during the growth of CZTS, we investigated the kinetic processes on CZTS (-1-1-2) surface, using first principles calculations. A surface Zn atom was found to occupy the subsurface Cu site easily due to a low reaction barrier, which may lead to a high ZnCu concentration and a secondary phase of ZnS. These n-type defects may create deep electron traps near the interface and become detrimental to device performance. To reduce the population of ZnCu and the secondary phase, we propose to use K as a surfactant to alter surface kinetic processes. Improvements on crystal quality and device performance based on this surfactant are consistent with early experimental observations. Computing resources were provided by the High Performance Cluster Computing Centre, Hong Kong Baptist University. This work was supported by the start-up funding at CUHK.

Etching microscopic defects in polycarbonate due to high dose ArF or KrF laser exposure

Energy Technology Data Exchange (ETDEWEB)

Jaleh, B. [Physics Department, Bu- Alisina University, Hamadan (Iran, Islamic Republic of); Parvin, P. [Physics Department, Amirkabir University, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of) and Laser Research Center, Atomic Energy Organization of Iran, AEOI, Tehran (Iran, Islamic Republic of) ]. E-mail: parvin@aut.ac.ir; Katoozi, M. [National Radiation Protection Department, AEOI, Tehran (Iran, Islamic Republic of); Zamani, Z. [Laser Research Center, Atomic Energy Organization of Iran, AEOI, Tehran (Iran, Islamic Republic of); Zare, A. [Laser Research Center, Atomic Energy Organization of Iran, AEOI, Tehran (Iran, Islamic Republic of)

2005-11-15

The ArF or KrF excimer laser exposure on the polycarbonate (PC) with corresponding doses higher than {phi}{sub th}5.2J/cm{sup 2}, at 32mJ/cm{sup 2} fluence per pulse and 5Hz pulse repetition rate (PRR), induces regular defects leading to self assembled defect structure following electrochemical etching (ECE). We have observed the conical-like structure for {phi}>{phi}{sub th}, whereas the polymer experiences hardening effect due to crosslinking when {phi}<{phi}{sub th}. Subsequently, conical-like, structure turns into track-like pits developing under ECE multiple treeing. Self assembled defect structure may be seen by naked eye as white spots, despite SEM illustrates a type of periodic pit formation-morphology. The exact explanation of the effect is not well understood yet. It looks like alpha tracks in the polymer surface, however the PC pieces were simply treated by excimer lasers at high doses, and they have not been exposed to the nuclear particles afterwards. We could not observe those effects at 308nm (XeCl laser) or longer wavelengths at 351nm (XeF laser) where UV photoablation does not occur. It indicates that UV ablation establishes surface degradation at shorter wavelengths, leading to laser micro etching. The mean track (defect) density is about one order of magnitude greater than the normal alpha tracks. Increasing UV doses, polymer undergoes a plateau, corresponding to etched defect saturation on PC.

Etching microscopic defects in polycarbonate due to high dose ArF or KrF laser exposure

International Nuclear Information System (INIS)

Jaleh, B.; Parvin, P.; Katoozi, M.; Zamani, Z.; Zare, A.

2005-01-01

The ArF or KrF excimer laser exposure on the polycarbonate (PC) with corresponding doses higher than φ th 5.2J/cm 2 , at 32mJ/cm 2 fluence per pulse and 5Hz pulse repetition rate (PRR), induces regular defects leading to self assembled defect structure following electrochemical etching (ECE). We have observed the conical-like structure for φ>φ th , whereas the polymer experiences hardening effect due to crosslinking when φ th . Subsequently, conical-like, structure turns into track-like pits developing under ECE multiple treeing. Self assembled defect structure may be seen by naked eye as white spots, despite SEM illustrates a type of periodic pit formation-morphology. The exact explanation of the effect is not well understood yet. It looks like alpha tracks in the polymer surface, however the PC pieces were simply treated by excimer lasers at high doses, and they have not been exposed to the nuclear particles afterwards. We could not observe those effects at 308nm (XeCl laser) or longer wavelengths at 351nm (XeF laser) where UV photoablation does not occur. It indicates that UV ablation establishes surface degradation at shorter wavelengths, leading to laser micro etching. The mean track (defect) density is about one order of magnitude greater than the normal alpha tracks. Increasing UV doses, polymer undergoes a plateau, corresponding to etched defect saturation on PC

Oil defect detection of electrowetting display

Science.gov (United States)

Chiang, Hou-Chi; Tsai, Yu-Hsiang; Yan, Yung-Jhe; Huang, Ting-Wei; Mang, Ou-Yang

2015-08-01

In recent years, transparent display is an emerging topic in display technologies. Apply in many fields just like mobile device, shopping or advertising window, and etc. Electrowetting Display (EWD) is one kind of potential transparent display technology advantages of high transmittance, fast response time, high contrast and rich color with pigment based oil system. In mass production process of Electrowetting Display, oil defects should be found by Automated Optical Inspection (AOI) detection system. It is useful in determination of panel defects for quality control. According to the research of our group, we proposed a mechanism of AOI detection system detecting the different kinds of oil defects. This mechanism can detect different kinds of oil defect caused by oil overflow or material deteriorated after oil coating or driving. We had experiment our mechanism with a 6-inch Electrowetting Display panel from ITRI, using an Epson V750 scanner with 1200 dpi resolution. Two AOI algorithms were developed, which were high speed method and high precision method. In high precision method, oil jumping or non-recovered can be detected successfully. This mechanism of AOI detection system can be used to evaluate the oil uniformity in EWD panel process. In the future, our AOI detection system can be used in quality control of panel manufacturing for mass production.

Defects in electroplated Cu and their impact on stress migration reliability studied using monoenergetic positron beams

International Nuclear Information System (INIS)

Uedono, Akira; Suzuki, Takashi; Nakamura, Tomoji; Ohdaira, Toshiyuki; Suzuki, Ryoichi

2007-01-01

Positron annihilation was used to probe vacancy-type defects in electroplated Cu fabricated using different electrolytes. Isochronal annealing experiments revealed that the agglomeration of vacancy-type defects in grains was observed below 200degC and that their concentration started to decrease above 300degC. The observed annealing stages of the defects agree with those for pure Cu irradiated with light particles such as electrons. The size and concentration of vacancies decreased with decreasing concentrations of residual impurities in Cu films. A decrease in the impurity concentration, however, increased the failure rate of Cu interconnects in a stress-induced voiding test. Thus, void formation related to stress-induced failure can be reduced through the introduction of vacancy clusters into grains. (author)

Defect kinetics and resistance to amorphization in zirconium carbide

International Nuclear Information System (INIS)

Zheng, Ming-Jie; Szlufarska, Izabela; Morgan, Dane

2015-01-01

To better understand the radiation response of zirconium carbide (ZrC), and in particular its excellent resistance to amorphization, we have used density functional theory methods to study the kinetics of point defects in ZrC. The migration barriers and recombination barriers of the simple point defects are calculated using the ab initio molecular dynamics simulation and the nudged elastic band method. These barriers are used to estimate C and Zr interstitial and vacancy diffusion and Frenkel pair recombination rates. A significant barrier for C Frenkel pair recombination is found but it is shown that a large concentration of C vacancies reduces this barrier dramatically, allowing facile healing of radiation damage. The mechanisms underlying high resistance to amorphization of ZrC were analyzed from the perspectives of structural, thermodynamic, chemical and kinetic properties. This study provides insights into the amorphization resistance of ZrC as well as a foundation for understanding general radiation damage in this material

Scanning tip measurement for identification of point defects

Directory of Open Access Journals (Sweden)

Raineri Vito

2011-01-01

Full Text Available Abstract Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. I - Defect structure of undoped and copper doped Hg/0.8/Cd/0.2/Te. II - Defect structure of indium-doped Hg/0.8/Cd/0.2/Te

Science.gov (United States)

Vydyanath, H. R.

1981-01-01

Hall effect and mobility measurements were conducted on undoped Hg(0.8)Cd(0.2)Te crystals which were quenched to room temperature after being subjected to equilibration at temperatures ranging from 400 to 655 C in various Hg atmospheres. The variation of the hole concentration in the cooled crystals at 77 K as a function of Hg's partial pressure at the equilibration temperature, together with a comparison of the hole mobility in the undoped samples with that in copper-doped ones, yields a defect model for the undoped crystals according to which they are intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. In the second part of this paper, the effects of indium doping are considered. The concentration of electrons obtained in the cooled crystals was found to be lower than the intrinsic carrier concentration at the equilibration temperatures. A defect model is proposed according to which most of the indium is incorporated as In2Te3(s) dissolved in the crystal, with only a small fraction of indium acting as single donors occupying Hg lattice sites.

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

International Nuclear Information System (INIS)

Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

2008-01-01

Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

Implications of defect clusters formed in cascades on free defect generation and microstructural development

International Nuclear Information System (INIS)

Wiedersich, H.

1992-12-01

A large fraction of the defects produced by irradiation with energetic neutrons or heavy ions originates in cascades. Not only increased recombination of vacancy and interstitial defects but also significant clustering of like defects occur. Both processes reduce the number of point defects available for long range migration. Consequences of defect clustering in cascades will be discussed in a semi-quantitative form with the aid of calculations using a very simplified model: Quasi-steady-state distributions of immobile vacancy and/or interstitial clusters develop which, in turn, can become significant sinks for mobile defects, and, therefore reduce their lifetime. Although cluster sinks will cause segregation and, potentially, precipitation of second phases due to local changes of composition, the finite lifetime of clusters will not lead to lasting, local compositional changes. A transition from highly dense interstitial and vacancy cluster distributions to the void swelling regime occurs when the thermal evaporation of vacancies from small vacancy clusters becomes significant at higher temperatures. Unequal clustering of vacancies and interstitials leads to an imbalance of their fluxes of in the matrix and, hence, to unequal contributions to atom transport by interstitials and by vacancies even in the quasi-steady state approximation

Histomorphometric Analysis of Periodontal Tissue Regeneration by the Use of High Density Polytetrafluoroethylen Membrane in Grade II Furcation Defects of Dogs

Directory of Open Access Journals (Sweden)

Raoofi S

2015-09-01

Full Text Available Statement of Problem: There are limited histomorphometric studies on biologic efficacy of high density tetrafluoroethylen (d-PTFE membrane. Objectives: To investigate the healing of surgically induced grade II furcation defects in dogs following the use of dense polytetrafluoroethylene as the barrier membrane and to compare the results with the contra lateral control teeth without the application of any membrane. Materials andMethods: Mandibular and maxillary 3rd premolar teeth of 18 young adult male mongrel dogs were used for the experiment. The furcation defects were created during the surgery. 5 weeks later, regenerative surgery was performed. The third premolar teeth were assigned randomly to control and test groups. In the test group, after a full thickness flap reflection, the d-PTFE membrane was placed over furcation defects. In the control group, no membrane was placed over the defect. 37 tissue blocks containing the teeth and surrounding hard and soft tissues were obtained three months post-regenerative surgery. The specimens were demineralized, serially sectioned, mounted and stained with Hematoxylin and Eosin staining technique. From each tissue block, 35-45 sections of 10 μm thickness within 60μm interval captured the entire surgically created defect. The histological images were transferred to computer and then the linear measurement ranges of the defects area, interadicular alveolar bone, epithelial attachment and coronal extension of the new cementum were done. Then, the volume and area of aforementioned parameters were calculated considering the thickness and interval of the sections. To compare the parameters between the control and test teeth, we calculated the amount of each one proportionally to the original amount of defects. Results: The mean interradicular root surface areas of original defects covered with new cementum was 74.46% and 29.59% for the membrane and control defects, respectively (p < 0.0001. Corresponding

Vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association with Mayer-Rokitansky-Küster-Hauser syndrome in co-occurrence

DEFF Research Database (Denmark)

Bjørsum-Meyer, Thomas; Herlin, Morten; Qvist, Niels

2016-01-01

Background: The vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome are rare conditions. We aimed to present two cases with the vertebral defect, anal atresia, cardiac...... defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser co-occurrence from our local surgical center and through a systematic literature search detect published cases. Furthermore, we aimed to collect existing knowledge...... in the embryopathogenesis and genetics in order to discuss a possible link between the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome. Case presentation: Our first case was a white girl...

Stability of concentration-related self-interstitial atoms in fusion material tungsten

Science.gov (United States)

Hong, Zhang; Shu-Long, Wen; Min, Pan; Zheng, Huang; Yong, Zhao; Xiang, Liu; Ji-Ming, Chen

2016-05-01

Based on the density functional theory, we calculated the structures of the two main possible self-interstitial atoms (SIAs) as well as the migration energy of tungsten (W) atoms. It was found that the difference of the and formation energies is 0.05-0.3 eV. Further analysis indicated that the stability of SIAs is closely related to the concentration of the defect. When the concentration of the point defect is high, SIAs are more likely to exist, SIAs are the opposite. In addition, the vacancy migration probability and self-recovery zones for these SIAs were researched by making a detailed comparison. The calculation provided a new viewpoint about the stability of point defects for self-interstitial configurations and would benefit the understanding of the control mechanism of defect behavior for this novel fusion material. Project supported by the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant Nos. A0920502051411-5 and 2682014ZT30), the Program of International Science and Technology Cooperation, China (Grant No. 2013DFA51050), the National Magnetic Confinement Fusion Science Program, China (Grant Nos. 2011GB112001 and 2013GB110001), the National High Technology Research and Development Program of China (Grant No. 2014AA032701), the National Natural Science Foundation of China (Grant No. 11405138), the Southwestern Institute of Physics Funds, China, the Western Superconducting Technologies Company Limited, China, the Qingmiao Plan of Southwest Jiaotong University, China (Grant No. A0920502051517-6), and the China Postdoctoral Science Foundation (Grant No. 2014M560813).

Thermal buckling behavior of defective CNTs under pre-load: A molecular dynamics study.

Science.gov (United States)

Mehralian, Fahimeh; Tadi Beni, Yaghoub; Kiani, Yaser

2017-05-01

Current study is concentrated on the extraordinary properties of defective carbon nanotubes (CNTs). The role of vacancy defects in thermal buckling response of precompressed CNTs is explored via molecular dynamics (MD) simulations. Defective CNTs are initially compressed at a certain ratio of their critical buckling strain and then undergo a uniform temperature rise. Comprehensive study is implemented on both armchair and zigzag CNTs with different vacancy defects including monovacancy, symmetric bivacancy and asymmetric bivacancy. The results reveal that defects have a pronounced impact on the buckling behavior of CNTs; interestingly, defective CNTs under compressive pre-load show higher resistance to thermal buckling than pristine ones. In the following, the buckling response of defective CNTs is shown to be dependent on the vacancy defects, location of defects and chirality. Copyright © 2017 Elsevier Inc. All rights reserved.

Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells

International Nuclear Information System (INIS)

Arafune, K.; Sasaki, T.; Wakabayashi, F.; Terada, Y.; Ohshita, Y.; Yamaguchi, M.

2006-01-01

We focused on the defects and impurities in polycrystalline silicon substrates, which deteriorate solar cell efficiency. Comparison of the minority carrier lifetime with the grain size showed that the region with short minority carrier lifetimes did not correspond to the region with small grains. Conversely, the minority carrier lifetime decreased as the etch-pit density (EPD) increased, suggesting that the minority carrier lifetime is strongly affected by the EPD. Electron beam induced current measurements revealed that a combination of grain boundaries and point defects had high recombination activity. Regarding impurities, the interstitial oxygen concentration was relatively low compared with that in a Czochralski-grown silicon substrate, the total carbon concentration exceeded the solubility limit of silicon melt. X-ray microprobe fluorescence measurements revealed a large amount of iron in the regions where there were many etch-pits and grain boundaries with etch-pits. X-ray absorption near edge spectrum analysis revealed trapped iron in the form of oxidized iron

Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

KAUST Repository

Roqan, Iman S.

2015-02-21

We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline GdxZn1-xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.

Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

KAUST Repository

Roqan, Iman S.; Venkatesh, S.; Zhang, Z.; Hussain, S.; Bantounas, Ioannis; Franklin, J. B.; Flemban, Tahani H.; Zou, B.; Lee, J.-S.; Schwingenschlö gl, Udo; Petrov, P. K.; Ryan, M. P.; Alford, N. M.

2015-01-01

We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline GdxZn1-xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.

Extended defects and hydrogen interactions in ion implanted silicon

Science.gov (United States)

Rangan, Sanjay

The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (TED at low anneal temperatures (550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for

Determination of bone and tissue concentrations of teicoplanin mixed with hydroxyapatite cement to repair cortical defects.

Science.gov (United States)

Eggenreich, K; Zeipper, U; Schwendenwein, E; Hadju, S; Kaltenecker, G; Laslo, I; Lang, S; Roschger, P; Vecsei, V; Wintersteiger, R

2002-01-01

A highly specific and sensitive isocratic reversed-phase high performance liquid chromatography (HPLC) method for the determination of the major component of teicoplanin in tissue is reported. Comparing fluorescamine and o-phthalaldehyde (OPA) as derivatizing agents, the derivative formed with the latter exhibits superior fluorescence intensity allowing detection of femtomole quantities. Pretreatment for tissue samples is by solid-phase extraction which uses Bakerbond PolarP C(18) cartridges and gives effective clean up from endogenous by-products. Linearity was given from 0.6 to 100 ng per injection. The coefficient of variation did not exceed 5.8% for both interday and intraday assays. It was found that when bone defects are repaired with a hydroxyapatite-teicoplanin mixture, the antibiotic does not degrade, even when it is in the cement for several months. The stability of teicoplanin in bone cement was determined fluorodensitometrically.

Local defect resonance for sensitive non-destructive testing

Science.gov (United States)

Adebahr, W.; Solodov, I.; Rahammer, M.; Gulnizkij, N.; Kreutzbruck, M.

2016-02-01

Ultrasonic wave-defect interaction is a background of ultrasound activated techniques for imaging and non-destructive testing (NDT) of materials and industrial components. The interaction, primarily, results in acoustic response of a defect which provides attenuation and scattering of ultrasound used as an indicator of defects in conventional ultrasonic NDT. The derivative ultrasonic-induced effects include e.g. nonlinear, thermal, acousto-optic, etc. responses also applied for NDT and defect imaging. These secondary effects are normally relatively inefficient so that the corresponding NDT techniques require an elevated acoustic power and stand out from conventional ultrasonic NDT counterparts for their specific instrumentation particularly adapted to high-power ultrasonic. In this paper, a consistent way to enhance ultrasonic, optical and thermal defect responses and thus to reduce an ultrasonic power required is suggested by using selective ultrasonic activation of defects based on the concept of local defect resonance (LDR). A strong increase in vibration amplitude at LDR enables to reliably detect and visualize the defect as soon as the driving ultrasonic frequency is matched to the LDR frequency. This also provides a high frequency selectivity of the LDR-based imaging, i.e. an opportunity of detecting a certain defect among a multitude of other defects in material. Some examples are shown how to use LDR in non-destructive testing techniques, like vibrometry, ultrasonic thermography and shearography in order to enhance the sensitivity of defect visualization.

Defect evolution and impurity migration in Na-implanted ZnO

Science.gov (United States)

Neuvonen, Pekka T.; Vines, Lasse; Venkatachalapathy, Vishnukanthan; Zubiaga, Asier; Tuomisto, Filip; Hallén, Anders; Svensson, Bengt G.; Kuznetsov, Andrej Yu.

2011-11-01

Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy (PAS) have been applied to study impurity migration and open volume defect evolution in Na+ implanted hydrothermally grown ZnO samples. In contrast to most other elements, the presence of Na tends to decrease the concentration of open volume defects upon annealing and for temperatures above 600∘C, Na exhibits trap-limited diffusion correlating with the concentration of Li. A dominating trap for the migrating Na atoms is most likely Li residing on Zn site, but a systematic analysis of the data suggests that zinc vacancies also play an important role in the trapping process.

Investigation of defects on PAMS microspheres fabricated with microencapsulation method

International Nuclear Information System (INIS)

Chen Sufen; Li Bo; Liu Yiyang; Zhang Zhanwen; Qi Xiaobo

2012-01-01

Poly-(α-methylstyrene) (PAMS) microspheres were fabricated with W1/O/W2 double emulsion microencapsulation method, and the effects of polyvinylalcohol (PVA) and CaCl 2 weight concentrations and the O/W2 phase ratio on the percentages of defected PAMS microspheres were studied. The weight concentrations of PVA and CaCl 2 and the O/W2 phase ratio in the fabrication process of PAMS microspheres were optimized. The results show that, for the three parameters being 1.0%, 1.5%, and 0.01, respectively, the percentage of the defect-free PAMS microspheres without vacuoles in the shell wall can be up to 60%. (authors)

High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

International Nuclear Information System (INIS)

Sall, Mamour

2013-01-01

Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

Quantum computing with defects.

Science.gov (United States)

Weber, J R; Koehl, W F; Varley, J B; Janotti, A; Buckley, B B; Van de Walle, C G; Awschalom, D D

2010-05-11

Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV(-1)) center stands out for its robustness--its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV(-1) center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.

High indoor radon concentrations in some Swedish waterworks

International Nuclear Information System (INIS)

Aakerblom, G.; Hagberg, N.; Mjoenes, L.; Heiberg, A.

2002-01-01

High indoor radon concentrations in buildings used for water treatment are not uncommon. When raw water is processed in an open system radon escapes from the water to the indoor air of the premises. It is not unusual that the staff of the waterworks have their offices in the building where the water is processed. If large volumes of water are processed and the evaporated radon can reach the workplaces the indoor radon concentration can be very high even if the radon concentration of the raw water is moderate. Groundwaters from aquifers in bedrock and soil and surface water that has been infiltrated through deposits of sand or gravel have the potential to cause high indoor radon levels. In surface water emanating directly from a lake or a river the radon concentrations are normally too low to cause problems. Three waterworks in central Sweden have been studied, Ludvika, Fredriksberg and Kolbaeck. The radon concentrations in the raw water of these waterworks are from 85 Bq/l to 300 Bq/l. Average indoor radon concentrations exceeding 17,000 Bq/m 3 have been measured in Ludvika with peaks of almost 37,000 Bq/m 3 . In Kolbaeck radon concentrations up to 56,000 Bq/m 3 have been measured. It is quite possible that employees of waterworks can receive doses exceeding 20 mSv per year (calculated according to ICRP:s dose conversion convention). Measurements of radon and gamma radiation from the waterworks are reported and methods to lower the indoor radon concentrations are discussed. (author)

Defect, Microstructure, and Mechanical Property of Ti-6Al-4V Alloy Fabricated by High-Power Selective Laser Melting

Science.gov (United States)

Cao, Sheng; Chen, Zhuoer; Lim, Chao Voon Samuel; Yang, Kun; Jia, Qingbo; Jarvis, Tom; Tomus, Dacian; Wu, Xinhua

2017-12-01

To improve the selective laser melting (SLM) productivity, a high laser power and accordingly adjusted parameters are employed to facilitate a high build rate. Three distinct processing strategies with incremental build rate are developed for SLM Ti-6Al-4V. Various types of defects are investigated. Further studies were carried out by heat-treatment and hot isostatic pressing to evaluate the influence of microstructure and porosity on mechanical properties. The anisotropic mechanical property in horizontally and vertically build samples were observed, which was attributable to the columnar grains and spatial arrangement of defects. Regardless of anisotropy, a post-SLM heat-treatment at 800°C for 2 h produces a combined high strength and ductility.

Adaptive sensor-based ultra-high accuracy solar concentrator tracker

Science.gov (United States)

Brinkley, Jordyn; Hassanzadeh, Ali

2017-09-01

Conventional solar trackers use information of the sun's position, either by direct sensing or by GPS. Our method uses the shading of the receiver. This, coupled with nonimaging optics design allows us to achieve ultra-high concentration. Incorporating a sensor based shadow tracking method with a two stage concentration solar hybrid parabolic trough allows the system to maintain high concentration with acute accuracy.

Birth Defects

Science.gov (United States)

A birth defect is a problem that happens while a baby is developing in the mother's body. Most birth defects happen during the first 3 months of ... in the United States is born with a birth defect. A birth defect may affect how the ...

Analysis of Volatile Markers for Virgin Olive Oil Aroma Defects by SPME-GC/FID: Possible Sources of Incorrect Data.

Science.gov (United States)

Oliver-Pozo, Celia; Aparicio-Ruiz, Ramón; Romero, Inmaculada; García-González, Diego L

2015-12-09

The need to explain virgin olive oil (VOO) aroma descriptors by means of volatiles has raised interest in applying analytical techniques for trapping and quantitating volatiles. Static headspace sampling with solid phase microextraction (SPME) as trapping material is one of the most applied solutions for analyzing volatiles. The use of an internal standard and the determination of the response factors of the main volatiles seem to guarantee the correct determination of volatile concentrations in VOOs by SPME-GC/FID. This paper, however, shows that the competition phenomena between volatiles in their adsorption to the SPME fiber, inherent in static headspace sampling, may affect the quantitation. These phenomena are more noticeable in the particular case of highly odorant matrices, such as rancid and vinegary VOOs with high intensity of defect. The competition phenomena can modify the measurement sensitivity, which can be observed in volatile quantitation as well as in the recording of internal standard areas in different matrices. This paper analyzes the bias of the peak areas and concentrations of those volatiles that are markers for each sensory defect of VOOs (rancid, vinegary, musty, and fusty) when the intensity and complexity of aroma are increased. Of the 17 volatile markers studied in this work, 10 presented some anomalies in the quantitation in highly odorant matrices due the competition phenomena. However, quantitation was not affected in the concentration ranges at which each volatile marker is typically found in the defective oils they were characteristic of, validating their use as markers.

Variable low energy positron beams for depth resolved defect spectroscopy in thin film structures

International Nuclear Information System (INIS)

Amarendra, G.; Viswanathan, B.; Venugopal Rao, G.; Parimala, J.; Purniah, B.

1997-01-01

The design, development and commissioning details of an ultra high vacuum compatible, magnetically-guided and compact variable low energy positron beam facility are reported. Information pertaining to the nature, concentration and spatial distribution of defects present at various depths in the near-surface layers of a material can be obtained using this technique. Some of the experimental results obtained using this facility, in terms of surface-sensitive positronium fraction measurements on Cu surfaces as well as defect-sensitive Doppler broadening measurements on semiconductor interfaces and ion irradiated silicon are presented. These results essentially provide an illustration of the research capability of the technique for the study of sub-surface regions and thin film interfaces. (author)

Effect of intermixing at CdS/CdTe interface on defect properties

Energy Technology Data Exchange (ETDEWEB)

Park, Ji-Sang, E-mail: jspark@anl.gov; Yang, Ji-Hui; Barnes, Teresa [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Wei, Su-Huai, E-mail: suhuaiwei@csrc.ac.cn [Beijing Computational Science Research Center, Beijing 100094 (China)

2016-07-25

We investigated the stability and electronic properties of defects in CdTe{sub 1−x}S{sub x} that can be formed at the CdS/CdTe interface. As the anions mix at the interface, the defect properties are significantly affected, especially those defects centered at cation sites like Cd vacancy, V{sub Cd}, and Te on Cd antisite, Te{sub Cd}, because the environment surrounding the defect sites can have different configurations. We show that at a given composition, the transition energy levels of V{sub Cd} and Te{sub Cd} become close to the valence band maximum when the defect has more S atoms in their local environment, thus improving the device performance. Such beneficial role is also found at the grain boundaries when the Te atom is replaced by S in the Te-Te wrong bonds, reducing the energy of the grain boundary level. On the other hand, the transition levels with respect to the valence band edge of CdTe{sub 1−x}S{sub x} increases with the S concentration as the valence band edge decreases with the S concentration, resulting in the reduced p-type doping efficiency.

Crystal defect studies using x-ray diffuse scattering

Energy Technology Data Exchange (ETDEWEB)

Larson, B.C.

1980-01-01

Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute precipitates are characterized by local electronic density changes at the defect sites and by distortions of the lattice structure surrounding the defects. The effect of these interruptions of the crystal lattice on the scattering of x-rays is considered in this paper, and examples are presented of the use of the diffuse scattering to study the defects. X-ray studies of self-interstitials in electron irradiated aluminum and copper are discussed in terms of the identification of the interstitial configuration. Methods for detecting the onset of point defect aggregation into dislocation loops are considered and new techniques for the determination of separate size distributions for vacancy loops and interstitial loops are presented. Direct comparisons of dislocation loop measurements by x-rays with existing electron microscopy studies of dislocation loops indicate agreement for larger size loops, but x-ray measurements report higher concentrations in the smaller loop range. Methods for distinguishing between loops and three-dimensional precipitates are discussed and possibilities for detailed studies considered. A comparison of dislocation loop size distributions obtained from integral diffuse scattering measurements with those from TEM show a discrepancy in the smaller sizes similar to that described above.

Crystal defect studies using x-ray diffuse scattering

International Nuclear Information System (INIS)

Larson, B.C.

1980-01-01

Microscopic lattice defects such as point (single atom) defects, dislocation loops, and solute precipitates are characterized by local electronic density changes at the defect sites and by distortions of the lattice structure surrounding the defects. The effect of these interruptions of the crystal lattice on the scattering of x-rays is considered in this paper, and examples are presented of the use of the diffuse scattering to study the defects. X-ray studies of self-interstitials in electron irradiated aluminum and copper are discussed in terms of the identification of the interstitial configuration. Methods for detecting the onset of point defect aggregation into dislocation loops are considered and new techniques for the determination of separate size distributions for vacancy loops and interstitial loops are presented. Direct comparisons of dislocation loop measurements by x-rays with existing electron microscopy studies of dislocation loops indicate agreement for larger size loops, but x-ray measurements report higher concentrations in the smaller loop range. Methods for distinguishing between loops and three-dimensional precipitates are discussed and possibilities for detailed studies considered. A comparison of dislocation loop size distributions obtained from integral diffuse scattering measurements with those from TEM show a discrepancy in the smaller sizes similar to that described above

Dimethadione embryotoxicity in the rat is neither correlated with maternal systemic drug concentrations nor embryonic tissue levels

Energy Technology Data Exchange (ETDEWEB)

Ozolinš, Terence R.S., E-mail: ozolinst@queensu.ca [Department of Biomedical and Molecular Sciences, Program in Pharmacology and Toxicology, Queen’s University, Botterell Hall, Kingston, ON K7L 3N6 (Canada); Weston, Andrea D. [Currently at Applied Biotechnology/Lead Discovery, Bristol-Myers Squibb, 5 Research Pkwy Wallingford, CT 06492-1996 (United States); Perretta, Anthony [Currently at Pfizer Research and Development, Eastern Point Road, Groton, CT 06340 (United States); Thomson, Jason J. [Currently at Yale Stem Cell Center, Yale School of Medicine, PO Box 208073, New Haven, CT 06520-8073 (United States); Brown, Nigel A. [Division of Basic Medical Sciences, St. George’s University of London, UK SW17 0RE (United Kingdom)

2015-11-15

Pregnant rats treated with dimethadione (DMO), the N-demethylated metabolite of the anticonvulsant trimethadione, produce offspring having a 74% incidence of congenital heart defects (CHD); however, the incidence of CHD has high inter-litter variability (40–100%) that presents a challenge when studying the initiating events prior to the presentation of an abnormal phenotype. We hypothesized that the variability in CHD incidence was the result of differences in maternal systemic concentrations or embryonic tissue concentrations of DMO. To test this hypothesis, dams were administered 300 mg/kg DMO every 12 h from the evening of gestational day (GD) 8 until the morning of GD 11 (six total doses). Maternal serum levels of DMO were assessed on GD 11, 12, 13, 14, 15, 18 and 21. Embryonic tissue concentrations of DMO were assessed on GD 11, 12, 13 and 14. In a separate cohort of GD 12 embryos, DMO concentrations and parameters of growth and development were assessed to determine if tissue levels of DMO were correlated with these endpoints. Embryos were exposed directly to different concentrations of DMO with whole embryo culture (WEC) and their growth and development assessed. Key findings were that neither maternal systemic concentrations nor tissue concentrations of DMO identified embryos that were sensitive or resistant to DMO in vivo. Direct exposure of embryos to DMO via WEC also failed to show correlations between embryonic concentrations of DMO with developmental outcomes in vitro. We conclude that neither maternal serum nor embryonic tissue concentrations of DMO predict embryonic outcome. - Highlights: • Dimethadione (DMO) induces septation defects (VSD) in rat offspring. • Despite high rate of VSD defects inter-litter variability is 40–100%. • Maternal and embryonic concentrations of DMO were assessed. • Neither serum nor tissue levels of DMO were correlated with embryotoxicity.

Dimethadione embryotoxicity in the rat is neither correlated with maternal systemic drug concentrations nor embryonic tissue levels

International Nuclear Information System (INIS)

Ozolinš, Terence R.S.; Weston, Andrea D.; Perretta, Anthony; Thomson, Jason J.; Brown, Nigel A.

2015-01-01

Pregnant rats treated with dimethadione (DMO), the N-demethylated metabolite of the anticonvulsant trimethadione, produce offspring having a 74% incidence of congenital heart defects (CHD); however, the incidence of CHD has high inter-litter variability (40–100%) that presents a challenge when studying the initiating events prior to the presentation of an abnormal phenotype. We hypothesized that the variability in CHD incidence was the result of differences in maternal systemic concentrations or embryonic tissue concentrations of DMO. To test this hypothesis, dams were administered 300 mg/kg DMO every 12 h from the evening of gestational day (GD) 8 until the morning of GD 11 (six total doses). Maternal serum levels of DMO were assessed on GD 11, 12, 13, 14, 15, 18 and 21. Embryonic tissue concentrations of DMO were assessed on GD 11, 12, 13 and 14. In a separate cohort of GD 12 embryos, DMO concentrations and parameters of growth and development were assessed to determine if tissue levels of DMO were correlated with these endpoints. Embryos were exposed directly to different concentrations of DMO with whole embryo culture (WEC) and their growth and development assessed. Key findings were that neither maternal systemic concentrations nor tissue concentrations of DMO identified embryos that were sensitive or resistant to DMO in vivo. Direct exposure of embryos to DMO via WEC also failed to show correlations between embryonic concentrations of DMO with developmental outcomes in vitro. We conclude that neither maternal serum nor embryonic tissue concentrations of DMO predict embryonic outcome. - Highlights: • Dimethadione (DMO) induces septation defects (VSD) in rat offspring. • Despite high rate of VSD defects inter-litter variability is 40–100%. • Maternal and embryonic concentrations of DMO were assessed. • Neither serum nor tissue levels of DMO were correlated with embryotoxicity.

Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

International Nuclear Information System (INIS)

Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2005-01-01

Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al 0.08 Ga 0.92 ) 0.52 In 0.48 P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm -1 , which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm -1 , of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm -1 , in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm 2 ), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V p -P i ). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center

Thermal wave interference with high-power VCSEL arrays for locating vertically oriented subsurface defects

Science.gov (United States)

Thiel, Erik; Kreutzbruck, Marc; Studemund, Taarna; Ziegler, Mathias

2018-04-01

Among the photothermal methods, full-field thermal imaging is used to characterize materials, to determine thicknesses of layers, or to find inhomogeneities such as voids or cracks. The use of classical light sources such as flash lamps (impulse heating) or halogen lamps (modulated heating) led to a variety of nondestructive testing methods, in particular, lock-in and flash-thermography. In vertical-cavity surface-emitting lasers (VCSELs), laser light is emitted perpendicularly to the surface with a symmetrical beam profile. Due to the vertical structure, they can be arranged in large arrays of many thousands of individual lasers, which allows power scaling into the kilowatt range. Recently, a high-power yet very compact version of such a VCSEL-array became available that offers both the fast timing behavior of a laser as well as the large illumination area of a lamp. Moreover, it allows a spatial and temporal control of the heating because individual parts of the array can be controlled arbitrarily in frequency, amplitude, and phase. In conjunction with a fast infrared camera, such structured heating opens up a field of novel thermal imaging and testing methods. As a first demonstration of this approach, we chose a testing problem very challenging to conventional thermal infrared testing: The detection of very thin subsurface defects perpendicularly oriented to the surface of metallic samples. First, we generate destructively interfering thermal wave fields, which are then affected by the presence of defects within their reach. It turned out that this technique allows highly sensitive detection of subsurface defects down to depths in excess of the usual thermographic rule of thumb, with no need for a reference or surface preparation.

Observation of defects evolution in electronic materials

Science.gov (United States)

Jang, Jung Hun

Advanced characterization techniques have been used to obtain a better understanding of the microstructure of electronic materials. The structural evolution, especially defects, has been investigated during the film growth and post-growth processes. Obtaining the relation between the defect evolution and growth/post-growth parameters is very important to obtain highly crystalline films. In this work, the growth and post-growth related defects in GaN, ZnO, strained-Si/SiGe films have been studied using several advanced characterization techniques. First of all, the growth of related defects in GaN and p-type ZnO films have been studied. The effect of growth parameters, such as growth temperature, gas flow rate, dopants used during the deposition, on the crystalline quality of the GaN and ZnO layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). In GaN films, it was found that the edge and mixed type threading dislocations were the dominant defects so that the only relevant figure of merit (FOM) for the crystalline quality should be the FWHM value of o-RC of the surface perpendicular plane which could be determined by a grazing incidence x-ray diffraction (GIXD) technique as shown in this work. The understanding of the relationship between the defect evolution and growth parameters allowed for the growth of high crystalline GaN films. For ZnO films, it was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. In addition, the result from the x-ray diffraction line profile analysis showed that the 0.5 at % P-doped ZnO film showed much higher microstrain than the 1.0 at % P-doped ZnO film, which indicated that the phosphorus atoms were segregated with increasing P atomic percentage. Finally, post-growth related defects in strained-Si/SiGe films were investigated. Postgrowth processes used in this work included high temperature N2

Studies of defects in neutron-irradiated p-type silicon by admittance measurements of n+-p diodes

International Nuclear Information System (INIS)

Tokuda, Y.; Usami, A.

1978-01-01

Defects introduced in p-type silicon by neutron irradiation were studied by measuring the admittance of n + -p diodes. It was shown that the energy levels and capture cross sections estimated from the temperature dependence of the admittance had some uncertainty due to the temperature dependence of the concentration of free carriers in the bulk and the high-frequency-junction capacitance. So, we presented the method of determination of the energy levels, capture cross sections, and concentrations of defects from the frequency dependence of the admittance. This method consists of the measurements of G/ω and C as a function of frequency. From this method, assuming that capture cross sections are independent of temperature, the energy levels of E/sub v/+0.16 and E/sub v/+0.36 eV were obtained. For these defects, the calculated values of the hole capture cross section were 2.4 x 10 -14 and 3.7 x 10 -14 cm 2 , respectively. Comparing with other published data, the energy level of E/sub v/+0.36 eV was found to be correlated with the divacancy

Issues in first-principles calculations for defects in semiconductors and oxides

International Nuclear Information System (INIS)

Nieminen, Risto M

2009-01-01

Recent advances in density-functional theory (DFT) calculations of defect electronic properties in semiconductors and insulators are discussed. In particular, two issues are addressed: the band-gap underestimation of standard density-functional methods with its harmful consequences for the positioning of defect-related levels in the band-gap region, and the slow convergence of calculated defect properties when the periodic supercell approach is used. Systematic remedies for both of these deficiencies are now available, and are being implemented in the context of popular DFT codes. This should help in improving the parameter-free accuracy and thus the predictive power of the methods to enable unambiguous explanation of defect-related experimental observations. These include not only the various fingerprint spectroscopies for defects but also their thermochemistry and dynamics, i.e. the temperature-dependent concentration and diffusivities of defects under various doping conditions and in different stoichiometries

High current pulsed positron microprobe

International Nuclear Information System (INIS)

Howell, R.H.; Stoeffl, W.; Kumar, A.; Sterne, P.A.; Cowan, T.E.; Hartley, J.

1997-01-01

We are developing a low energy, microscopically focused, pulsed positron beam for defect analysis by positron lifetime spectroscopy to provide a new defect analysis capability at the 10 10 e + s -l beam at the Lawrence Livermore National Laboratory electron linac. When completed, the pulsed positron microprobe will enable defect specific, 3-dimensional maps of defect concentrations with sub-micron resolution of defect location. By coupling these data with first principles calculations of defect specific positron lifetimes and positron implantation profiles we will both map the identity and concentration of defect distributions

Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO3

International Nuclear Information System (INIS)

Nataf, Guillaume F.; Guennou, Mael; Haussmann, Alexander; Barrett, Nick; Kreisel, Jens

2016-01-01

The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of high temperature annealing on defects and optical properties of ZnO single crystals

International Nuclear Information System (INIS)

Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q.; Kawasuso, A.; Sekiguchi, T.

2012-01-01

Hydrothermal grown ZnO single crystals were annealed in N 2 or O 2 between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N 2 or O 2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O 2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O 2 ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Defects in CdSe thin films, induced by high energy electron irradiation

International Nuclear Information System (INIS)

Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

2004-01-01

Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

High precision measurement of the hyperfine fields of substitutional and defect associated Cd in single crystalline hcp cobalt

CERN Document Server

Correia, J G; Melo, A A; Soares, J C

1996-01-01

The hyperfine fields of Cd in single crystalline hcp Co were measured after simultaneous implantation of 111mCd and 111In. High statistics measurements could be done separately for each parent isotope combining the e--g and g-g PAC techniques. The hyperfine coupling constants wL(CdCo)=422.8(1) Mrad/s and w0(CdCo)=6.14(11) Mrad/s are determined for Cd probes in undisturbed substitutional sites. Several defect associated sites in the hcp Co lattice are clearly seen in the data. Most of the radiation damage created by the ion implantation anneals out at temperatures below 503 K, with only one dominating component surviving at this temperature. This defect is assigned as a probe atom in an interstitial site, surrounded by a vacancy tetrahedron. The corresponding magnetic field and electric field gradient are collinear with the c-axis of the Co lattice, and the respective coupling constants are wL(defect)= 216.7(2) Mrad/s and w0(defect)= 45.3(6) Mrad/s.

Automatic classification of defects in weld pipe

International Nuclear Information System (INIS)

Anuar Mikdad Muad; Mohd Ashhar Hj Khalid; Abdul Aziz Mohamad; Abu Bakar Mhd Ghazali; Abdul Razak Hamzah

2000-01-01

With the advancement of computer imaging technology, the image on hard radiographic film can be digitized and stored in a computer and the manual process of defect recognition and classification may be replace by the computer. In this paper a computerized method for automatic detection and classification of common defects in film radiography of weld pipe is described. The detection and classification processes consist of automatic selection of interest area on the image and then classify common defects using image processing and special algorithms. Analysis of the attributes of each defect such as area, size, shape and orientation are carried out by the feature analysis process. These attributes reveal the type of each defect. These methods of defect classification result in high success rate. Our experience showed that sharp film images produced better results

Automatic classification of defects in weld pipe

International Nuclear Information System (INIS)

Anuar Mikdad Muad; Mohd Ashhar Khalid; Abdul Aziz Mohamad; Abu Bakar Mhd Ghazali; Abdul Razak Hamzah

2001-01-01

With the advancement of computer imaging technology, the image on hard radiographic film can be digitized and stored in a computer and the manual process of defect recognition and classification may be replaced by the computer. In this paper, a computerized method for automatic detection and classification of common defects in film radiography of weld pipe is described. The detection and classification processes consist of automatic selection of interest area on the image and then classify common defects using image processing and special algorithms. Analysis of the attributes of each defect such area, size, shape and orientation are carried out by the feature analysis process. These attributes reveal the type of each defect. These methods of defect classification result in high success rate. Our experience showed that sharp film images produced better results. (Author)

Reduction in Defect Content of ODS Alloys

Energy Technology Data Exchange (ETDEWEB)

Ritherdon, J

2001-05-15

The work detailed within this report is a continuation of earlier work carried out under contract number 1DX-SY382V. The earlier work comprises a literature review of the sources and types of defects found principally in Fe-based ODS alloys as well as experimental work designed to identify defects in the prototype ODS-Fe{sub 3}Al alloy, deduce their origins and to recommend methods of defect reduction. The present work is an extension of the experimental work already reported and concentrates on means of reduction of defects already identified rather than the search for new defect types. This report also includes results gathered during powder separation trials, conducted by the University of Groningen, Netherlands and coordinated by the University of Liverpool, involving the separation of different metallic powders in terms of their differing densities. The scope and objectives of the present work were laid out in the technical proposal ''Reduction in Defect Content in ODS Alloys-III''. All the work proposed in the ''Statement of Work'' section of the technical proposal has been carried out and all work extra to the ''Statement of Work'' falls within the context of an ODS-Fe{sub 3}Al alloy of improved overall quality and potential creep performance in the consolidated form. The outturn of the experimental work performed is reported in the following sections.

Study by nuclear techniques of the impurity-defect interaction in implanted metals

International Nuclear Information System (INIS)

Thome, Lionel.

1978-01-01

The properties of out equilibrium alloys formed by impurity implantation are strongly influenced by radiation damage created during implantation. This work presents a study, via hyperfine interaction and lattice location experiments, of the impurity-defect interaction in ion implanted metals. When the impurity and defect concentrations in the implanted layer are small, i.e. when impurities are uniformly recoil implanted in the whole crystal volume following a nuclear reaction (Aq In experiments), the impurity interacts with its own damage cascade. In this case, a vacancy is found to be trapped by a fraction of impurities during an athermal process. The value of this fraction does not seem to depend critically on impurity and host. When the impurity and defect concentrations are such that defect cascades interact, i.e. when impurities are implanted with an isotope separator (Fe Yb experiments), the observed impurity-vacancy (or vacancy cluster) interactions depend then strongly on the nature of impurity and host. An empirical relation, which indicates the importance of elastic effects, has been found between the proportion of impurities interacting with defects and the difference between impurity and host atom radii. At implantation temperature such that vacancies are mobile, the impurity-defect interaction depends essentially on vacancy migration. A model based on chemical kinetics has been developed to account for the variation with temperature of measured quantities [fr

Abnormal photothermal effect of laser radiation on highly defect oxide bronze nanoparticles under the sub-threshold excitation of absorption

Science.gov (United States)

Gulyaev, P.; Kotvanova, M.; Omelchenko, A.

2017-05-01

The mechanism of abnormal photo-thermal effect of laser radiation on nanoparticles of oxide bronzes has been proposed in this paper. The basic features of the observed effect are: a) sub-threshold absorption of laser radiation by the excitation of donor-like levels formed in the energy gap due to superficial defects of the oxide bronze nano-crystals; b) an interband radiationless transition of energy of excitation on deep triplet levels and c) consequent recombination occurring at the plasmon absorption. K or Na atoms thermally intercalated to the octahedral crystal structure of TiO2 in the wave SHS combustion generate acceptor levels in the gap. The prepared oxide bronzes of the non-stoichiometric composition NaxTiO2 and KxTiO2 were examined by high resolution TEM, and then grinded in a planetary mill with powerful dispersion energy density up to 4000 J/g. This made it possible to obtain nanoparticles about 50 nm with high surface defect density (1017-1019 cm-2 at a depth of 10 nm). High photo-thermal effect of laser radiation on the defect nanocrystals observed after its impregnation into cartilaginous tissue exceeds 7 times in comparison with the intact ones.

Stochastic annealing simulations of defect interactions among subcascades

Energy Technology Data Exchange (ETDEWEB)

Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States); Singh, B.N.

1997-04-01

The effects of the subcascade structure of high energy cascades on the temperature dependencies of annihilation, clustering and free defect production are investigated. The subcascade structure is simulated by closely spaced groups of lower energy MD cascades. The simulation results illustrate the strong influence of the defect configuration existing in the primary damage state on subsequent intracascade evolution. Other significant factors affecting the evolution of the defect distribution are the large differences in mobility and stability of vacancy and interstitial defects and the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades. Annealing simulations are also performed on high-energy, subcascade-producing cascades generated with the binary collision approximation and calibrated to MD results.

Electron transport in ethanol & methanol absorbed defected graphene

Science.gov (United States)

Dandeliya, Sushmita; Srivastava, Anurag

2018-05-01

In the present paper, the sensitivity of ethanol and methanol molecules on surface of single vacancy defected graphene has been investigated using density functional theory (DFT). The changes in structural and electronic properties before and after adsorption of ethanol and methanol were analyzed and the obtained results show high adsorption energy and charge transfer. High adsorption happens at the active site with monovacancy defect on graphene surface. Present work confirms that the defected graphene increases the surface reactivity towards ethanol and methanol molecules. The presence of molecules near the active site affects the electronic and transport properties of defected graphene which makes it a promising choice for designing methanol and ethanol sensor.

Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

1994-01-01

High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

Positron lifetime and Doppler broadening study of defects created by swift ion irradiation in sapphire

International Nuclear Information System (INIS)

Liszkay, L.; Gordo, P.M.; Lima, A. de; Havancsak, K.; Skuratov, V.A.; Kajcsos, Z.

2004-01-01

Swift ions create a defect profile penetrating deep into a solid compared to the sampling range of typical slow positron beams, which may consequently study a homogeneous zone of defected materials. To investigate the defect population created by energetic ions, we studied α-Al 2 O 3 single crystals irradiated with swift Kr ions by using conventional and pulsed positron beams. Samples irradiated with krypton at 245 MeV energy in a wide fluence range show nearly saturated positron trapping above 5 x 10 10 ions cm -2 fluence, indicating the creation of monovacancies in high concentration. At 1 x 10 14 ions cm -2 irradiation a 500 ps long lifetime component appears, showing the creation of larger voids. This threshold corresponds well to the onset of the overlap of the damage zones after Bi ion irradiation along the ion trajectories observed with microscopic methods. (orig.)

Introduction and recovery of point defects in electron-irradiated ZnO

International Nuclear Information System (INIS)

Tuomisto, F.; Saarinen, K.; Look, D.C.; Farlow, G.C.

2005-01-01

We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (E el =2 MeV, fluence 6x10 17 cm -2 ) was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or O antisites. The Zn vacancies and negative ions act as compensating centers and are introduced at a concentration [V Zn ]≅c ion ≅2x10 16 cm -3 . The O vacancies are introduced at a 10-times-larger concentration [V O ]≅3x10 17 cm -3 and are suggested to be isolated. The O vacancies are observed as neutral at low temperatures, and an ionization energy of 100 meV could be fitted with the help of temperature-dependent Hall data, thus indicating their deep donor character. The irradiation-induced defects fully recover after the annealing at 600 K, in good agreement with electrical measurements. The Zn vacancies recover in two separate stages, indicating that the Zn vacancies are parts of two different defect complexes. The O vacancies anneal simultaneously with the Zn vacancies at the later stage, with an activation energy of E V,O m =1.8±0.1 eV. The negative ions anneal out between the two annealing stages of the vacancies

Towards a qualitative understanding of the scattering of topological defects

International Nuclear Information System (INIS)

Rosenzweig, C.; Srivastava, A.M.

1991-01-01

Head-on collisions of strings, monopoles, and Skyrmions result in 90 degree scattering. We propose a unified description of these objects (for the global case) as members of a definite class of topological defects. All soliton-soliton pairs that are members of this class scatter at 90 degree in head-on collisions. Our analysis also shows that the scattered solitons are composed of half-portions of the original solitons. We further predict back-to-back scattering for head-on collisions of a soliton-antisoliton pair at sufficiently high energies. We argue that these qualitative aspects of scattering are common because strings, monopoles, and Skyrmions correspond to various winding-number mappings from S n to S n . Our analysis concentrates on the smoothness of the field configurations and may be extendible to the scattering of gauged topological defects. For the case of strings our results lead to an understanding of intercommutivity and the accompanying formation of kinks

High-performance flat-panel solar thermoelectric generators with high thermal concentration

Science.gov (United States)

Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J. Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

2011-07-01

The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m-2) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity.

High-performance flat-panel solar thermoelectric generators with high thermal concentration.

Science.gov (United States)

Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

2011-05-01

The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m(-2)) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity. © 2011 Macmillan Publishers Limited. All rights reserved

On kinetics of paramagnetic radiation defects accumulation in beryllium ceramics

International Nuclear Information System (INIS)

Polyakov, A.I.; Ryabikin, Yu.A.; Zashkvara, O.V.; Bitenbaev, M.I.; Petykhov, Yu.V.

1999-01-01

Results of paramagnetic radiation defects concentration dependence study in beryllium ceramics from gamma-irradiation dose ( 60 Co) within interval 0-100 Mrem are cited. Obtained dose dependence has form of accumulation curve with saturation typical of for majority of solids (crystals, different polymers, organic substances and others) , in which under irradiation occur not only formation of paramagnetic radiation defects, but its destruction due to recombination and interaction with radiation fields. Analysis of accumulation curve by the method of distant asymptotics allows to determine that observed in gamma-irradiated beryllium ceramics double line of electron spin resonance is forming of two types of paramagnetic radiation defects. It was defined, that sum paramagnetic characteristics of beryllium ceramics within 1-100 Mrad gamma- irradiation dose field change insignificantly and define from first type of paramagnetic radiation defects

The defect structure of ceramic high Tc superconductors

International Nuclear Information System (INIS)

Van Tendeloo, G.; Amelinckx, S.; Zandbergen, H.W.; Verwerft, M.

1989-01-01

In this paper an overview is given of electron microscopy studies on the different ceramic superconductors: YBa 2 Cu 3 O 7 , Bi(Tl)-Sr(Ba)- Ca-Cu-O and Pb 2 Sr 2 Y 0.5 Ca 0.5 Cu 3 O x . Planar defects in these materials play an important role in the superconducting properties. Their structural characteristics are discussed

Predesigned surface patterns and topological defects control the active matter.

Science.gov (United States)

Turiv, Taras; Peng, Chenhui; Guo, Yubing; Wei, Qi-Huo; Lavrentovich, Oleg

Active matter exhibits remarkable patterns of never-ending dynamics with giant fluctuations of concentration, varying order, nucleating and annihilating topological defects. These patterns can be seen in active systems of both biological and artificial origin. A fundamental question is whether and how one can control this chaotic out-of-equilibrium behavior. We demonstrate a robust control of local concentration, trajectories of active self-propelled units and the net flows of active bacteria Bacillus Substilis by imposing pre-designed surface patterns of orientational order in a water-based lyotropic chromonic liquid crystal. The patterns force the bacteria to gather into dynamic swarms with spatially modulated concentration and well-defined polarity of motion. Topological defects produce net motion of bacteria with a unidirectional circulation, while pairs of defects induce a pumping action. The qualitative features of the dynamics can be explained by interplay of curvature and activity, in particular, by ability of mixed splay-bend curvatures to generate threshold-less active flows. The demonstrated level of control opens opportunities in engineering materials and devices that mimic rich functionality of living systems. This work was supported by NSF Grants DMR-1507637, DMS-1434185, CMMI-1436565, by the Petroleum Research Grant PRF# 56046-ND7 administered by the American Chemical Society.

Diameter Dependence of Planar Defects in InP Nanowires.

Science.gov (United States)

Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

2016-09-12

In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Science.gov (United States)

Stupica, John; Goradia, Chandra; Swartz, Clifford K.; Weinberg, Irving

1987-01-01

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, Oleh; Filipecki, Jacek; Shpotyuk, Mykhaylo

2013-01-01

Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As 2 S 3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As 4 + ; S 1 - ) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As 2 S 3 is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Modeling of Powder Bed Manufacturing Defects

Science.gov (United States)

Mindt, H.-W.; Desmaison, O.; Megahed, M.; Peralta, A.; Neumann, J.

2018-01-01

Powder bed additive manufacturing offers unmatched capabilities. The deposition resolution achieved is extremely high enabling the production of innovative functional products and materials. Achieving the desired final quality is, however, hampered by many potential defects that have to be managed in due course of the manufacturing process. Defects observed in products manufactured via powder bed fusion have been studied experimentally. In this effort we have relied on experiments reported in the literature and—when experimental data were not sufficient—we have performed additional experiments providing an extended foundation for defect analysis. There is large interest in reducing the effort and cost of additive manufacturing process qualification and certification using integrated computational material engineering. A prerequisite is, however, that numerical methods can indeed capture defects. A multiscale multiphysics platform is developed and applied to predict and explain the origin of several defects that have been observed experimentally during laser-based powder bed fusion processes. The models utilized are briefly introduced. The ability of the models to capture the observed defects is verified. The root cause of the defects is explained by analyzing the numerical results thus confirming the ability of numerical methods to provide a foundation for rapid process qualification.

Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation

CERN Document Server

Stahl, J; Lindström, G; Pintilie, I

2003-01-01

Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientation. Three different oxygen concentrations were achieved by the so-called diffusion oxygenated float zone (DOFZ) process initiated by the CERN-RD48 (ROSE) collaboration. Before the irradiation a material characterization has been performed. In contrast to radiation damage by neutrons or high- energy charged hadrons, were the bulk damage is dominated by a mixture of clusters and point defects, the bulk damage caused by **6**0Co-gamma-radiation is only due to the introduction of point defects. The dominant electrically active defects which have been detected after **6**0Co-gamma-irradiation by C-DLTS are the electron traps VO//i, C//iC//s, V//2( = /-), V //2(-/0) and the hole trap C//i O//i. The main difference betwe...

Laser melting of groove defect repair on high thermal conductivity steel (HTCS-150)

Science.gov (United States)

Norhafzan, B.; Aqida, S. N.; Fazliana, F.; Reza, M. S.; Ismail, I.; Khairil, C. M.

2018-02-01

This paper presents laser melting repair of groove defect on HTCS-150 surface using Nd:YAG laser system. Laser melting process was conducted using JK300HPS Nd:YAG twin lamp laser source with 1064 nm wavelength and pulsed mode. The parameters are pulse repetition frequency (PRF) that is set from 70 to 100 Hz, average power ( P A) of 50-70 W, and laser spot size of 0.7 mm. HTCS-150 samples were prepared with groove dimension of 0.3 mm width and depths of 0.5 mm using EDM wire cut. Groove defect repaired using laser melting process on groove surface area with various parameters' process. The melted surface within the groove was characterized for subsurface hardness profile, roughness, phase identification, chemical composition, and metallographic study. The roughness analysis indicates high PRF at large spot size caused high surface roughness and low surface hardness. Grain refinement of repaired layer was analyzed within the groove as a result of rapid heating and cooling. The hardness properties of modified HTCS inside the groove and the bulk surface increased two times from as received HTCS due to grain refinement which is in agreement with Hall-Petch equation. These findings are significant to parameter design of die repair for optimum surface integrity and potential for repairing crack depth and width of less than 0.5 and 0.3 mm, respectively.

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

International Nuclear Information System (INIS)

Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

2014-01-01

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

Point defects behavior in beta Cu-based shape memory alloys

International Nuclear Information System (INIS)

Romero, R.; Somoza, A.

1999-01-01

A summary of positron annihilation spectroscopy data relating to the point defect behavior after quenching and to thermal equilibrium in β-phase Cu-based shape memory alloys Cu-Zn-Al and Cu-Al-Be is presented. Particular attention is given to the initial concentration of quenched-in vacancies as a function of the quenching temperature, migration of the retained point defects with aging temperature and time, and the vacancy formation and migration energies. (orig.)

Functional antigen binding by the defective B cells of CBA/N mice.

Science.gov (United States)

Snippe, H; Merchant, B; Lizzio, E F; Inman, J K

1982-01-01

CBA/N mice have an X-linked B cell defect which prevents them from responding to nonmitogenic thymic independent (TI-2) antigens such as dinitrophenylated DNP-Ficoll (1,2). The F1 male progeny of CBA/N female mice express the same defect. Spleen cell suspensions from such defective mice (CBA/N X C3H/HeN F1 males) could not respond to DNP-Ficoll following in vitro immunization and subsequent transfer into irradiated, syngeneic, F1 male recipients as expected. In contrast, normal CBA/N X C3H/HeN F1 female spleen cells could respond and effect a "rescue"; they mounted strong plaque-forming cell responses 7 days after in vitro exposure to DNP-Ficoll and subsequent transfer into irradiated F1 male recipients. Defective F1 male spleen cells, however, could bind significant quantities of 125I-DNP-Ficoll after in vitro exposure. Extensive washing of these spleen cells could not reverse this binding. Such DNP-Ficoll-exposed and washed F1 male spleen cells could, after transfer, aid normal untreated F1 female cells in their rescue function. The defective F1 male spleen cells could convey immunogenic quantities of DNP-Ficoll to the "rescuing" F1 female cells. Mitomycin treatment of F1 male cells did not interfere with their conveyor function. Goat anti-mouse mu serum impeded the passive antigen conveyor function of defective F1 male cells as did prior exposure to high concentrations of free DNP hapten. Our data support the view that the B cell defect of CBA/N X C3H/HeN F1 male mice does not relate to antigen binding, but rather to an inability to be effectively triggered by certain cell-bound polymeric antigens.

High-Q Defect-Free 2D Photonic Crystal Cavity from Random Localised Disorder

Directory of Open Access Journals (Sweden)

Kelvin Chung

2014-07-01

Full Text Available We propose a high-Q photonic crystal cavity formed by introducing random disorder to the central region of an otherwise defect-free photonic crystal slab (PhC. Three-dimensional finite-difference time-domain simulations determine the frequency, quality factor, Q, and modal volume, V, of the localized modes formed by the disorder. Relatively large Purcell factors of 500–800 are calculated for these cavities, which can be achieved for a large range of degrees of disorders.

Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3

International Nuclear Information System (INIS)

Gastrow, Guillaume von; Li, Shuo; Putkonen, Matti; Laitinen, Mikko; Sajavaara, Timo; Savin, Hele

2015-01-01

Highlights: • The ALD Al 2 O 3 passivation quality can be controlled by the ozone concentration. • Ozone concentration affects the Si/Al 2 O 3 interface charge and defect density. • A surface recombination velocity of 7 cm/s is reached combining ozone and water ALD. • Carbon and hydrogen concentrations correlate with the surface passivation quality. - Abstract: We study the impact of ozone-based Al 2 O 3 Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration can be achieved by a single process combining the water- and ozone-based reactions. This process results in an interface defect density of 2 × 10 11 eV −1 cm −2 , and maximum surface recombination velocities of 7.1 cm/s and 10 cm/s, after annealing and after an additional firing at 800 °C, respectively. In addition, our results suggest that the effective oxide charge density can be optimized in a simple way by varying the ozone concentration and by injecting water to the ozone process.

Macular Bruch's membrane defect and dome-shaped macula in high myopia.

Science.gov (United States)

Fang, Yuxin; Jonas, Jost B; Yokoi, Tae; Cao, Kejia; Shinohara, Kosei; Ohno-Matsui, Kyoko

2017-01-01

To examine an association between macular Bruch's membrane defects (MBMD) and a dome-shaped appearance of the macula (DSM). Retrospective, observational case series study. The study included highly myopic individuals who were consecutively examined between May 2014 and December 2015. The patients underwent swept-source optical coherence tomography (OCT) for visualization of DSM and MBMDs defined as Bruch´s membrane defects located at a distance of maximal 1500 μm from the foveola. Out of 1983 highly myopic eyes (1057 patients), 166 eyes (8.4%; 95% confidence interval (CI):7.2%,9.6%)) showed a DSM and 534 eyes showed a MBMD. In multivariate binary regression analysis, higher prevalence of DSM was associated with a higher prevalence of a MBMD (P<0.001; OR: 1.96; 95%CI: 1.40, 2.75) after adjusting for longer axial length (P<0.001; odds ratio (OR): 1.27; 95%CI: 1.16, 1.38). In eyes with a DSM partially surrounded by a MBMD, the retina, retinal pigment epithelium (RPE) and choroid appeared relatively unchanged in the central region with Bruch´s membrane (BM) preserved. In the ring-like BM-free region surrounding the central prominent island of the DSM, the RPE, the outer and middle retinal layers, the choriocapillaris and the middle-sized choroidal vessel layer were absent. In association with a DSM, three MBMD types were differentiated: MBMDs in patchy chorioretinal atrophy, MBMDs in choroidal neovascularization-related macular atrophy, and MBMDs as temporally extending large parapapillary gamma zone. Presence of a DSM was significantly associated with the presence of MBMDs. The morphology of the DSM in association with MBMDs may be associated with a focal relaxation of the posterior sclera, no longer pushed outward by an expanding BM but allowed to partially bulge inward, leading to the formation of a DSM.

Lattice defect investigation of nanostructured ECAP-Cu by means of x-ray line profile analysis, calorimetry and electrical resistometry

International Nuclear Information System (INIS)

Schafler, E.; Steiner, G.; KEXrber, M.; Zehetbauer, M.J.; Korznikova, E.

2005-01-01

Full text: Cu rods have been deformed by Equal Channel Angular Pressing (ECAP) up to shear strains γ ∼ 5 while applying various deformation paths A, B c and C. ECAP processed materials show a microstructure with grain sizes in the nanometer range and a high density of lattice defects. X-ray Bragg Profile Analyses (XPA), Differential Scanning Calorimetry (DSC) as well as Residual Electrical Resistivity (RER) measurements have been performed, in order to detect the densities of various deformation induced lattice defects and/or their arrangements. The results have been analyzed in terms of annealing of deformation induced dislocations and vacancies (vacancy agglomerates). Compared to conventional cold work procedures, deformation by ECAP achieves a strongly enhanced concentration of vacancy type defects. (author)

Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

Energy Technology Data Exchange (ETDEWEB)

Kretzer, Ulrich

2007-12-10

In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

Defect-tuning exchange bias of ferromagnet/antiferromagnet core/shell nanoparticles by numerical study

International Nuclear Information System (INIS)

Mao Zhongquan; Chen Xi; Zhan Xiaozhi

2012-01-01

The influence of non-magnetic defects on the exchange bias (EB) of ferromagnet (FM)/antiferromagnet (AFM) core/shell nanoparticles is studied by Monte Carlo simulations. It is found that the EB can be tuned by defects in different positions. Defects at both the AFM and FM interfaces reduce the EB field while they enhance the coercive field by decreasing the effective interface coupling. However, the EB field and the coercive field show respectively a non-monotonic and a monotonic dependence on the defect concentration when the defects are located inside the AFM shell, indicating a similar microscopic mechanism to that proposed in the domain state model. These results suggest a way to optimize the EB effect for applications. (paper)

Electrochemical behavior of thin anodic oxide films on Zircaloy-4: Role of the mobile defects

International Nuclear Information System (INIS)

Salot, R.; Lefebvre-Joud, F.; Baroux, B.

1996-01-01

The first stages of the electrochemical oxidation of Zircaloy-4 are investigated using simple electrochemical tests and modeling the passive film modifications occurring as a result of contact with the electrolyte. Variations in electrode potential (open-circuit conditions) or current density (potentiodynamic scans) can be simply explained by a high field (F ∼ 10 6 V/cm) assisted passive film growth. Under open-circuit conditions, this field does not vary with exposure time (in the 2 h to 48 h range). The minimum electric field for the onset of high-field behavior is also evaluated and found smaller than the theoretical value which can be explained by a variation in the concentration of mobile defects throughout the film. Measurements of the electrode potential decay after a potentiodynamic scan confirm this model, allowing interpretation of the film modification as a combination of two separate phenomena: film growth under a high electric field and point defect annihilation

Evolution of defect signatures at ferroelectric domain walls in Mg-doped LiNbO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Nataf, Guillaume F. [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Service de Physique de l' Etat Condense, DSM/IRAMIS/SPEC, CNRS UMR 3680, CEA Saclay, 91191, Gif sur Yvette cedex (France); Guennou, Mael [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Haussmann, Alexander [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, George-Baehr-Str. 1, 01069, Dresden (Germany); Barrett, Nick [Service de Physique de l' Etat Condense, DSM/IRAMIS/SPEC, CNRS UMR 3680, CEA Saclay, 91191, Gif sur Yvette cedex (France); Kreisel, Jens [Materials, Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, 4422, Belvaux (Luxembourg); Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, 4422, Belvaux (Luxembourg)

2016-03-15

The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nonlinear X-ray production of defect spins in vitreous SiO2: the roles of creation and activation

International Nuclear Information System (INIS)

Galeener, F.L.; Kerwin, D.B.; Miller, A.J.

1992-01-01

The dependence of spin concentration on X-ray dose is shown to be nonlinear in distinctive ways for the three most common defect structures in vitreous SiO 2 . We fit the data with a model invoking two concurrent simple processes: creation of new defects and activation of preexisting ones. The resultant fit parameters show dependencies on hydroxyl concentration and fictive temperature that shed new light on the processes, the defects, their origins and the radiation hardness of v-SiO 2 . (author)

Radiation-induced defects formation in Bi-containing vitreous chalcogenides

International Nuclear Information System (INIS)

Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A.

1997-01-01

Processes of formation and annihilation of coordination defects in As 2 Se 3 Bi y and (As 2 Se 3 )(Bi 2 Se 3 ) y amorphous chalcogenide semiconductors induced by influence of Co 60 gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As 2 Se 3 Bi y glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2015-01-07

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (defect band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

Diffraction of electromagnetic waves by a metallic bar grating with a defect in dielectric filling of the slits

Science.gov (United States)

Kochetova, Lyudmila A.; Prosvirnin, Sergey L.

2018-04-01

The problem of electromagnetic wave diffraction by the metallic bar grating with inhomogeneous dielectric filling of each slit between bars has been investigated by using the mode matching technique. The transmission and the inner field distribution have been analyzed for the structure which has a single defect in the periodic filling of slits. Such periodic structures are of particular interest for applications in optics, as they have the ability to concentrate a strong inner electromagnetic field and are characterized by high-Q transmission resonances. We use a simple approach to control the width and location of the stopband of the structure by placing a defect in the periodic filling of the grating slits. As a result, we observe the narrow resonance of transmission in terms of stopband width of the defect-free grating and confinement of strong inner electromagnetic field. By changing the permittivity of the defect layer we can shift the frequency of the resonant transmission.

Quantum transport in defective phosphorene nanoribbons: Effects of atomic vacancies

Science.gov (United States)

Li, L. L.; Peeters, F. M.

2018-02-01

Defects are almost inevitably present in realistic materials and defective materials are expected to exhibit very different properties than their nondefective (perfect) counterparts. Here, using a combination of the tight-binding approach and the scattering matrix formalism, we investigate the electronic transport properties of defective phosphorene nanoribbons (PNRs) containing atomic vacancies. We find that for both armchair PNRs (APNRs) and zigzag PNRs (ZPNRs), single vacancies can create quasilocalized states, which can affect their conductance. With increasing vacancy concentration, three different transport regimes are identified: ballistic, diffusive, and Anderson localized ones. In particular, ZPNRs that are known to be metallic due to the presence of edge states become semiconducting: edge conductance vanishes and transport gap appears due to Anderson localization. Moreover, we find that for a fixed vacancy concentration, both APNRs and ZPNRs of narrower width and/or longer length are more sensitive to vacancy disorder than their wider and/or shorter counterparts, and that for the same ribbon length and width, ZPNRs are more sensitive to vacancy disorder than APNRs.

Perception of risk from automobile safety defects.

Science.gov (United States)

Slovic, P; MacGregor, D; Kraus, N N

1987-10-01

Descriptions of safety engineering defects of the kind that compel automobile manufacturers to initiate a recall campaign were evaluated by individuals on a set of risk characteristic scales that included overall vehicle riskiness, manufacturer's ability to anticipate the defect, importance for vehicle operation, severity of consequences and likelihood of compliance with a recall notice. A factor analysis of the risk characteristics indicated that judgments could be summarized in terms of two composite scales, one representing the uncontrollability of the damage the safety defect might cause and the other representing the foreseeability of the defect by the manufacturer. Motor vehicle defects were found to be highly diverse in terms of the perceived qualities of their risks. Location of individual defects within the factor space was closely associated with perceived riskiness, perceived likelihood of purchasing another car from the same manufacturer, perceived likelihood of compliance with a recall notice, and actual compliance rates.

Actinic inspection of multilayer defects on EUV masks

International Nuclear Information System (INIS)

Barty, A; Liu, Y; Gullikson, E; Taylor, J S; Wood, O

2005-01-01

The production of defect-free mask blanks, and the development of techniques for inspecting and qualifying EUV mask blanks, remains a key challenge for EUV lithography. In order to ensure a reliable supply of defect-free mask blanks, it is necessary to develop techniques to reliably and accurately detect defects on un-patterned mask blanks. These inspection tools must be able to accurately detect all critical defects whilst simultaneously having the minimum possible false-positive detection rate. There continues to be improvement in high-speed non-actinic mask blank inspection tools, and it is anticipated that these tools can and will be used by industry to qualify EUV mask blanks. However, the outstanding question remains one of validating that non-actinic inspection techniques are capable of detecting all printable EUV defects. To qualify the performance of non-actinic inspection tools, a unique dual-mode EUV mask inspection system has been installed at the Advanced Light Source (ALS) synchrotron at Lawrence Berkeley National Laboratory. In high-speed inspection mode, whole mask blanks are scanned for defects using 13.5-nm wavelength light to identify and map all locations on the mask that scatter a significant amount of EUV light. In imaging, or defect review mode, a zone plate is placed in the reflected beam path to image a region of interest onto a CCD detector with an effective resolution on the mask of 100-nm or better. Combining the capabilities of the two inspection tools into one system provides the unique capability to determine the coordinates of native defects that can be used to compare actinic defect inspection with visible light defect inspection tools under commercial development, and to provide data for comparing scattering models for EUV mask defects

An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

Energy Technology Data Exchange (ETDEWEB)

Brenet, G.; Timerkaeva, D.; Caliste, D.; Pochet, P. [CEA, INAC-SP2M, Atomistic Simulation Laboratory, F-38000 Grenoble (France); Univ. Grenoble Alpes, INAC-SP2M, L-Sim, F-38000 Grenoble (France); Sgourou, E. N.; Londos, C. A. [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece)

2015-09-28

We introduce an atomistic description of the kinetic Mass Action Law to predict concentrations of defects and complexes. We demonstrate in this paper that this approach accurately predicts carbon/oxygen related defect concentrations in silicon upon annealing. The model requires binding and migration energies of the impurities and complexes, here obtained from density functional theory (DFT) calculations. Vacancy-oxygen complex kinetics are studied as a model system during both isochronal and isothermal annealing. Results are in good agreement with experimental data, confirming the success of the methodology. More importantly, it gives access to the sequence of chain reactions by which oxygen and carbon related complexes are created in silicon. Beside the case of silicon, the understanding of such intricate reactions is a key to develop point defect engineering strategies to control defects and thus semiconductors properties.

Varying stiffness and load distributions in defective ball bearings: Analytical formulation and application to defect size estimation

Science.gov (United States)

Petersen, Dick; Howard, Carl; Prime, Zebb

2015-02-01

This paper presents an analytical formulation of the load distribution and varying effective stiffness of a ball bearing assembly with a raceway defect of varying size, subjected to static loading in the radial, axial and rotational degrees of freedom. The analytical formulation is used to study the effect of the size of the defect on the load distribution and varying stiffness of the bearing assembly. The study considers a square-shaped outer raceway defect centered in the load zone and the bearing is loaded in the radial and axial directions while the moment loads are zero. Analysis of the load distributions shows that as the defect size increases, defect-free raceway sections are subjected to increased static loading when one or more balls completely or partly destress when positioned in the defect zone. The stiffness variations that occur when balls pass through the defect zone are significantly larger and change more rapidly at the defect entrance and exit than the stiffness variations that occur for the defect-free bearing case. These larger, more rapid stiffness variations generate parametric excitations which produce the low frequency defect entrance and exit events typically observed in the vibration response of a bearing with a square-shaped raceway defect. Analysis of the stiffness variations further shows that as the defect size increases, the mean radial stiffness decreases in the loaded radial and axial directions and increases in the unloaded radial direction. The effects of such stiffness changes on the low frequency entrance and exit events in the vibration response are simulated with a multi-body nonlinear dynamic model. Previous work used the time difference between the low frequency entrance event and the high frequency exit event to estimate the size of the defect. However, these previous defect size estimation techniques cannot distinguish between defects that differ in size by an integer number of the ball angular spacing, and a third feature

Defect detection module

International Nuclear Information System (INIS)

Ernwein, R.; Westermann, G.

1986-01-01

The ''defect detector'' module is aimed at exceptional event or state recording. Foreseen for voltage presence monitoring on high supply voltage module of drift chambers, its characteristics can also show up the vanishing of supply voltage and take in account transitory fast signals [fr

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n/sup +/p silicon solar cells

International Nuclear Information System (INIS)

Stupica, J.; Goradia, C.; Swartz, C.K.; Weinberg, I.

1987-01-01

Two lithium-counterdoped n/sup +/p silicon solar cells with different lithium concentrations were irradiated by 10 MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the higher radiation resistance. Deep level defects were studied using deep level transient spectroscopy which yielded two defects that were lithium related. Relating the defect energy levels obtained from this study under 10 MeV protons, with an earlier work using 1 MeV electron irradiations shows no correlation of the defect energy levels. There is one marked comparison though. The absence of the boron interstitial-oxygen interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The present results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell

Research In Diagnosing Bearing Defects From Vibrations

Science.gov (United States)

Zoladz, T.; Earhart, E.; Fiorucci, T.

1995-01-01

Report describes research in bearing-defect signature analysis - use of vibration-signal analysis to diagnose defects in roller and ball bearings. Experiments performed on bearings in good condition and other bearings in which various parts scratched to provide known defects correlated with vibration signals. Experiments performed on highly instrumented motor-driven rotor assembly at speeds up to 10,050 r/min, using accelerometers, velocity probes, and proximity sensors mounted at various locations on assembly to measure vibrations.

Defects that control the properties of Tl- and Hg-based superconductors

International Nuclear Information System (INIS)

Jorgensen, J.D.; Chmaissem, O.; Hinks, D.G.; Mitchell, J.F.; Wagner, J.L.; Univ. of North Dakota, Grand Forks, ND; Jensen, W.R.; Dabrowski, B.; Northern Illinois Univ., DeKalb, IL

1997-03-01

Defects that affect T c in Tl 2 Ba 2 CuO 6+δ and HgBa 2 CuO 4+δ and HgBa 2 CuO 4+δ have been characterized by neutron powder diffraction. In Tl 2 Ba 2 CuO 6+δ , the dominant defect is interstitial oxygen between the two Tl-O planes, but Cu substitution on the Tl site also affects properties and there is evidence for a second oxygen defect for compositions in the vicinity of maximum T c . In HgBa 2 CuO 4+δ , there are two competing oxygen defects in the Hg layer. The relative concentrations of these defects switches upon passing from the underdoped region, through the maximum T c , to the overdoped region. This remarkable behavior could result from a change in the topology of the Fermi surface upon passing through the van Hove singularity

Optimal serum and red blood cell folate concentrations in women of reproductive age for prevention of neural tube defects: World Health Organization guidelines.

Science.gov (United States)

Cordero, Amy M; Crider, Krista S; Rogers, Lisa M; Cannon, Michael J; Berry, R J

2015-04-24

Neural tube defects (NTDs) such as spina bifida, anencephaly, and encephalocele are serious birth defects of the brain and spine that occur during the first month of pregnancy when the neural tube fails to close completely. Randomized controlled trials and observational studies have shown that adequate daily consumption of folic acid before and during early pregnancy considerably reduces the risk for NTDs. The U.S. Public Health Service recommends that women capable of becoming pregnant consume 400 µg of folic acid daily for NTD prevention. Furthermore, fortification of staple foods (e.g., wheat flour) with folic acid has decreased folate-sensitive NTD prevalence in multiple settings and is a highly cost-effective intervention.

Use of platelet rich fibrin in a fenestration defect around an implant

Directory of Open Access Journals (Sweden)

R Vijayalakshmi

2012-01-01

Full Text Available Guided bone regeneration (GBR in implant therapy is especially useful for implant placement with dehiscence defects or fenestration defects. In alveolar ridges with marked facial/buccal depressions or in knifeedge alveolar crests, the position and direction of fixture placement is restricted. Improvement of alveolar ridge morphology becomes possible with GBR. This article describes a case in which the fenestration defect around an implant was treated by the application of platelet rich fibrin, a second generation platelet concentrate along with bone graft, and guided tissue regeneration membrane.

Enhancing the photoresponse and photocatalytic properties of TiO2 by controllably tuning defects across {101} facets

Science.gov (United States)

Wan, Piaopiao; Hood, Zachary D.; Adhikari, Shiba P.; Xu, Yunfan; Yang, Shize; Wu, Sujuan

2018-03-01

Introducing defects into semiconductors with well-controlled exposed facets offers an effective route for the development of photocatalytic materials with greatly improved properties. Here, we report a facile ethylene glycol reduction procedure to make anatase titanium dioxide (TiO2) with different concentrations of exposed {001} and {101} facets, leading to different surficial defects. TiO2 with increased concentrations of {101} facets shows a 5-fold improvement in photocurrent generation as well as improved photocatalytic activity towards water splitting under visible light irradiation. The improved activity is ascribed to the oxygen vacancies as well as the variable surface chemical states, which collectively induce a slower recombination rate of photo-induced electron-hole pairs. This work also highlights a feasible strategy to obtain the defective TiO2 and explore the synergistic effect of surface defects and different concentrations of exposed {001} and {101} facets for photocurrent and photocatalytic properties under visible light irradiation.

Applications of nonimaging optics for very high solar concentrations

International Nuclear Information System (INIS)

O'Gallagher, J.; Winston, R.

1997-01-01

Using the principles and techniques of nonimaging optics, solar concentrations that approach the theoretical maximum can be achieved. This has applications in solar energy collection wherever concentration is desired. In this paper, we survey recent progress in attaining and using high and ultrahigh solar fluxes. We review a number of potential applications for highly concentrated solar energy and the current status of the associated technology. By making possible new and unique applications for intense solar flux, these techniques have opened a whole new frontier for research and development of potentially economic uses of solar energy

Defect tolerance in resistor-logic demultiplexers for nanoelectronics.

Science.gov (United States)

Kuekes, Philip J; Robinett, Warren; Williams, R Stanley

2006-05-28

Since defect rates are expected to be high in nanocircuitry, we analyse the performance of resistor-based demultiplexers in the presence of defects. The defects observed to occur in fabricated nanoscale crossbars are stuck-open, stuck-closed, stuck-short, broken-wire, and adjacent-wire-short defects. We analyse the distribution of voltages on the nanowire output lines of a resistor-logic demultiplexer, based on an arbitrary constant-weight code, when defects occur. These analyses show that resistor-logic demultiplexers can tolerate small numbers of stuck-closed, stuck-open, and broken-wire defects on individual nanowires, at the cost of some degradation in the circuit's worst-case voltage margin. For stuck-short and adjacent-wire-short defects, and for nanowires with too many defects of the other types, the demultiplexer can still achieve error-free performance, but with a smaller set of output lines. This design thus has two layers of defect tolerance: the coding layer improves the yield of usable output lines, and an avoidance layer guarantees that error-free performance is achieved.

Rheological behavior of high-concentration sodium caseinate dispersions.

Science.gov (United States)

Loveday, Simon M; Rao, M Anandha; Creamer, Lawrence K; Singh, Harjinder

2010-03-01

Apparent viscosity and frequency sweep (G', G'') data for sodium caseinate dispersions with concentrations of approximately 18% to 40% w/w were obtained at 20 degrees C; colloidal glass behavior was exhibited by dispersions with concentration >or=23% w/w. The high concentrations were obtained by mixing frozen powdered buffer with sodium caseinate in boiling liquid nitrogen, and allowing the mixtures to thaw and hydrate at 4 degrees C. The low-temperature G'-G'' crossover seen in temperature scans between 60 and 5 degrees C was thought to indicate gelation. Temperature scans from 5 to 90 degrees C revealed gradual decrease in G' followed by plateau values. In contrast, G'' decreased gradually and did not reach plateau values. Increase in hydrophobicity of the sodium caseinate or a decrease in the effective volume fraction of its aggregates may have contributed to these phenomena. The gelation and end of softening temperatures of the dispersions increased with the concentration of sodium caseinate. From an Eldridge-Ferry plot, the enthalpy of softening was estimated to be 29.6 kJ mol(-1). The results of this study should be useful for creating new products with high concentrations of sodium caseinate.

Defect structure in proton-irradiated copper and nickel

International Nuclear Information System (INIS)

Tsukuda, Noboru; Ehrhart, P.; Jaeger, W.; Schilling, W.; Dworschak, F.; Gadalla, A.A.

1987-01-01

This single crystals of copper or nickel with a thickness of about 10 μm are irradiated with 3 MeV protons at room temperature and the structures of resultant defects are investigated based on measurements of the effects of irradiation on the electrical resistivity, length, lattice constants, x-ray diffraction line profile and electron microscopic observations. The measurements show that the electrical resistivity increases with irradiation dose, while leveling off at high dose due to overlapping of irradiation cascades. The lattice constants decreases, indicating that many vacancies still remain while most of the interstitial stoms are eliminated, absorbed or consumed for dislocation loop formation. The x-ray line profile undergoes broadening, which is the result of dislocation loops, dislocation networks and SFT's introduced by the proton irradiation. Various defects have different effects though they cannot be identified separately from the profile alone. A satellite peak appears at a low angle, which seems to arise from periodic defect structures that are found in electron microscopic observations. In both copper and nickel, such periodic defect structures are seen over a wide range from high to low dose. Defect-free and defect-rich domains (defect walls), 0.5 to several μm in size, are alingned parallel to the {001} plane at intervals of 60 nm. The defect walls, which consist of dislocations, dislocation loops and SFT's, is 20 - 40 nm thick. (Nogami, K.)

Influence of defects on the effective electrical conductivity of a monolayer produced by random sequential adsorption of linear k-mers onto a square lattice

Science.gov (United States)

Tarasevich, Yuri Yu.; Laptev, Valeri V.; Goltseva, Valeria A.; Lebovka, Nikolai I.

2017-07-01

The effect of defects on the behaviour of electrical conductivity, σ, in a monolayer produced by the random sequential adsorption of linear k-mers (particles occupying k adjacent sites) onto a square lattice is studied by means of a Monte Carlo simulation. The k-mers are deposited on the substrate until a jamming state is reached. The presence of defects in the lattice (impurities) and of defects in the k-mers with concentrations of dl and dk, respectively, is assumed. The defects in the lattice are distributed randomly before deposition and these lattice sites are forbidden for the deposition of k-mers. The defects of the k-mers are distributed randomly on the deposited k-mers. The sites filled with k-mers have high electrical conductivity, σk, whereas the empty sites, and the sites filled by either types of defect have a low electrical conductivity, σl, i.e., a high-contrast, σk /σl ≫ 1, is assumed. We examined isotropic (both the possible x and y orientations of a particle are equiprobable) and anisotropic (all particles are aligned along one given direction, y) deposition. To calculate the effective electrical conductivity, the monolayer was presented as a random resistor network and the Frank-Lobb algorithm was used. The effects of the concentrations of defects dl and dk on the electrical conductivity for the values of k =2n, where n = 1 , 2 , … , 5, were studied. Increase of both the dl and dk parameters values resulted in decreases in the value of σ and the suppression of percolation. Moreover, for anisotropic deposition the electrical conductivity along the y direction was noticeably larger than in the perpendicular direction, x. Phase diagrams in the (dl ,dk)-plane for different values of k were obtained.

Automatic Semiconductor Wafer Image Segmentation for Defect Detection Using Multilevel Thresholding

Directory of Open Access Journals (Sweden)

Saad N.H.

2016-01-01

Full Text Available Quality control is one of important process in semiconductor manufacturing. A lot of issues trying to be solved in semiconductor manufacturing industry regarding the rate of production with respect to time. In most semiconductor assemblies, a lot of wafers from various processes in semiconductor wafer manufacturing need to be inspected manually using human experts and this process required full concentration of the operators. This human inspection procedure, however, is time consuming and highly subjective. In order to overcome this problem, implementation of machine vision will be the best solution. This paper presents automatic defect segmentation of semiconductor wafer image based on multilevel thresholding algorithm which can be further adopted in machine vision system. In this work, the defect image which is in RGB image at first is converted to the gray scale image. Median filtering then is implemented to enhance the gray scale image. Then the modified multilevel thresholding algorithm is performed to the enhanced image. The algorithm worked in three main stages which are determination of the peak location of the histogram, segmentation the histogram between the peak and determination of first global minimum of histogram that correspond to the threshold value of the image. The proposed approach is being evaluated using defected wafer images. The experimental results shown that it can be used to segment the defect correctly and outperformed other thresholding technique such as Otsu and iterative thresholding.

Diffusion and aggregation of subsurface radiation defects in lithium fluoride nanocrystals

Science.gov (United States)

Voitovich, A. P.; Kalinov, V. S.; Martynovich, E. F.; Stupak, A. P.; Runets, L. P.

2015-09-01

Lithium fluoride nanocrystals were irradiated by gamma rays at a temperature below the temperature corresponding to the mobility of anion vacancies. The kinetics of the aggregation of radiation-induced defects in subsurface layers of nanocrystals during annealing after irradiation was elucidated. The processes that could be used to determine the activation energy of the diffusion of anion vacancies were revealed. The value of this energy in subsurface layers was obtained. For subsurface layers, the concentrations ratio of vacancies and defects consisting of one vacancy and two electrons was found. The factors responsible for the differences in the values of the activation energies and concentration ratios in subsurface layers and in the bulk of the crystals were discussed.

Platelet concentration in platelet concentrates and periodontal regeneration-unscrambling the ambiguity

Directory of Open Access Journals (Sweden)

A Suchetha

2015-01-01

Full Text Available Context: Platelet-rich-plasma (PRP and Platelet-rich-fibrin (PRF are extensively used autologous platelet concentrates in periodontal regeneration, and PRF has a better efficacy as compared to PRP. The rationale for this difference has often been attributed to the difference in the structure of the fibrin matrix. However, the effect of concentration of platelets on the regenerative potential of these concentrates is obscure. Aims: The study was conducted to evaluate and compare, clinically and radiographically, the efficacy of PRF and PRP in the treatment of periodontal endosseous defects and to assess the effect of platelet concentration on periodontal regeneration. Materials and Methods: Twenty intrabony defects were selected and divided into two groups randomly by the coin toss method. Group I received PRP and Group II subjects were treated with PRF. The platelet counts in PRP and PRF were analyzed. Clinical and radiological parameters were assessed at baseline and 3, 6, and 9 months postoperatively. Statistical Analysis: Kruskal–Wallis Chi-square test, Wilcoxon signed rank test, t-test, and Spearman's rank correlation were used for statistical analysis of data. Results: There was statistically significant improvement in all the parameters in the two groups except in relation to gingival recession. There was a statistically significant difference between the platelet count in Group I and Group II (P = 0.002. Conclusion: PRP and PRF appear to have nearly comparable effects in terms of periodontal regeneration. The concentration of platelets appears to play a paradoxical role in regeneration. The regenerative potential of platelets appears to be optimal within a limited range.

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep